WorldWideScience

Sample records for nanotwinned copper films

  1. Revealing the Maximum Strength in Nanotwinned Copper

    DEFF Research Database (Denmark)

    Lu, L.; Chen, X.; Huang, Xiaoxu

    2009-01-01

    boundary–related processes. We investigated the maximum strength of nanotwinned copper samples with different twin thicknesses. We found that the strength increases with decreasing twin thickness, reaching a maximum at 15 nanometers, followed by a softening at smaller values that is accompanied by enhanced...

  2. Brittle versus ductile behaviour of nanotwinned copper: A molecular dynamics study

    International Nuclear Information System (INIS)

    Pei, Linqing; Lu, Cheng; Zhao, Xing; Zhang, Liang; Cheng, Kuiyu; Michal, Guillaume; Tieu, Kiet

    2015-01-01

    Nanotwinned copper (Cu) exhibits an unusual combination of ultra-high yield strength and high ductility. A brittle-to-ductile transition was previously experimentally observed in nanotwinned Cu despite Cu being an intrinsically ductile metal. However, the atomic mechanisms responsible for brittle fracture and ductile fracture in nanotwinned Cu are still not clear. In this study, molecular dynamics (MD) simulations at different temperatures have been performed to investigate the fracture behaviour of a nanotwinned Cu specimen with a single-edge-notched crack whose surface coincides with a twin boundary. Three temperature ranges are identified, indicative of distinct fracture regimes, under tensile straining perpendicular to the twin boundary. Below 1.1 K, the crack propagates in a brittle fashion. Between 2 K and 30 K a dynamic brittle-to-ductile transition is observed. Above 40 K the crack propagates in a ductile mode. A detailed analysis has been carried out to understand the atomic fracture mechanism in each fracture regime

  3. Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via.

    Science.gov (United States)

    Sun, Fu-Long; Liu, Zhi-Quan; Li, Cai-Fu; Zhu, Qing-Sheng; Zhang, Hao; Suganuma, Katsuaki

    2018-02-23

    This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm²) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.

  4. Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

    Science.gov (United States)

    Sun, Fu-Long; Li, Cai-Fu; Zhu, Qing-Sheng; Zhang, Hao; Suganuma, Katsuaki

    2018-01-01

    This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process. PMID:29473865

  5. Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

    Directory of Open Access Journals (Sweden)

    Fu-Long Sun

    2018-02-01

    Full Text Available This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV with a high aspect ratio (~4. With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2 and convection conditions (300 rpm, which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111 orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.

  6. Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

    Science.gov (United States)

    Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

    2018-05-01

    Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

  7. Deformation mechanisms in nanotwinned copper by molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Anh Kiet; Pei, Linqing; Zhang, Liang; Su, Lihong [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Zhan, Lihua [State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China)

    2017-02-27

    Nanotwinned materials exhibit simultaneous ultrahigh strength and high ductility which is attributed to the interactions between dislocations and twin boundaries but the specific deformation mechanisms are rarely seen in experiments at the atomic level. Here we use large scale molecular dynamics simulations to explore this intricate interplay during the plastic deformation of nanotwinned Cu. We demonstrate that the dominant deformation mechanism transits dynamically from slip transfer to twin boundary migration to slip-twin interactions as the twin boundary orientation changes from horizontal to slant, and then to a vertical direction. Building on the fundamental physics of dislocation processes from computer simulations and combining the available experimental investigations, we unravel the underlying deformation mechanisms for nanotwinned Cu, incorporating all three distinct dislocation processes. Our results give insights into systematically engineering the nanoscale twins to fabricate nanotwinned metals or alloys that have high strength and considerable ductility.

  8. Nanotwin-enhanced fatigue resistance of ultrathin Ag films for flexible electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Wan, H.Y. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016 (China); Luo, X.M.; Li, X.; Liu, W. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Zhang, G.P., E-mail: gpzhang@imr.ac.cn [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2016-10-31

    Fatigue strength and cracking behavior of ultrathin Ag films on flexible polyimide substrates were investigated. The experimental results show that the enhanced fatigue strength of the 50 nm-thick Ag films not only is caused by the increase in the yield stress and the suppression of cyclic strain localization, but also results from the severe crack deflection induced by the formation of nanotwins, which delays the fatigue crack initiation and enhances the resistance to the fatigue crack growth. The fatigue cracking mechanism for the nanocrystalline metal films is evaluated.

  9. Mechanical behavior of nanotwinned materials – experimental and computational approaches

    Energy Technology Data Exchange (ETDEWEB)

    Yavas, Hakan [Iowa State Univ., Ames, IA (United States)

    2016-12-17

    Nanotwinned materials exhibit high strength combined with excellent thermal stability, making them potentially attractive for numerous applications. When deposited on cold substrates at high rates, for example, silver films can be prepared with a high-density of growth twins with an average twin boundary spacing of less than 10 nm. These films show a very strong {111} texture, with the twin boundaries being perpendicular to the growth direction. The origins of superior mechanical and thermal properties of nanotwinned materials, however, are not yet fully understood and need further improvements.

  10. Orientation dependent fracture behavior of nanotwinned copper

    Energy Technology Data Exchange (ETDEWEB)

    Kobler, Aaron, E-mail: aaron.kobler@kit.edu; Hahn, Horst, E-mail: ahodge@usc.edu, E-mail: horst.hahn@kit.edu, E-mail: christian.kuebel@kit.edu [Technische Universität Darmstadt (TUD), KIT-TUD Joint Research Laboratory Nanomaterials, 64287 Darmstadt (Germany); Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Hodge, Andrea M., E-mail: ahodge@usc.edu, E-mail: horst.hahn@kit.edu, E-mail: christian.kuebel@kit.edu [University of Southern California (USC), Department of Aerospace and Mechanical Engineering, Los Angeles, California 90089-1453 (United States); Kübel, Christian, E-mail: ahodge@usc.edu, E-mail: horst.hahn@kit.edu, E-mail: christian.kuebel@kit.edu [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-06-29

    Columnar grown nanotwinned Cu was tensile tested in-situ inside the TEM in combination with automated crystal orientation mapping scanning transmission electron microscopy to investigate the active deformation mechanisms present in this material. Two tensile directions were applied, one parallel to the twin boundaries and the other perpendicular to the twin boundaries. In case of tensile testing perpendicular to the twin boundaries, the material deformed by detwinning and the formation of new grains, whereas in the parallel case, no new grains were formed and the fracture happened along the twin boundaries and a boundary that has formed during the deformation.

  11. Orientation dependent fracture behavior of nanotwinned copper

    International Nuclear Information System (INIS)

    Kobler, Aaron; Hahn, Horst; Hodge, Andrea M.; Kübel, Christian

    2015-01-01

    Columnar grown nanotwinned Cu was tensile tested in-situ inside the TEM in combination with automated crystal orientation mapping scanning transmission electron microscopy to investigate the active deformation mechanisms present in this material. Two tensile directions were applied, one parallel to the twin boundaries and the other perpendicular to the twin boundaries. In case of tensile testing perpendicular to the twin boundaries, the material deformed by detwinning and the formation of new grains, whereas in the parallel case, no new grains were formed and the fracture happened along the twin boundaries and a boundary that has formed during the deformation

  12. Strengthening mechanisms and dislocation processes in <111> textured nanotwinned copper

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Anh Kiet; Pei, Linqing; Zhang, Liang; Cheng, Kuiyu [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Huang, Minghui [State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083 (China)

    2016-10-31

    We use molecular dynamics simulations to elucidate the deformation mechanisms of <111> textured nanotwinned materials under tensile loading parallel to the twin boundary (TB). Our simulations reveal that the tensile strength of nanotwinned Cu increases monotonically as the twin spacing decreases. The strengthening effect mainly results from TB restricting the transmission of dislocations across the TB. Throughout the simulations the transmissions of dislocations across the TBs dominate the plastic deformation. Both direct and indirect transmissions are identified at atomic level. Direct transmission involves either successive transmission of the leading and trailing partials as in the Fleischer cross-slip model or absorption and desorption of the extended dislocation as in the Friedel-Escaig cross-slip mechanism. In contrast, indirect transmission involves the formation of special superjogs. The persistent slip transfer leaves zigzag slip traces on the cross-sectional view and the inhomogeneous deformation leads to the formation of intersecting slip bands on the plane view.

  13. Quantitative damage and detwinning analysis of nanotwinned copper foil under cyclic loading

    International Nuclear Information System (INIS)

    Yoo, Byung-Gil; Boles, Steven T.; Liu, Y.; Zhang, X.; Schwaiger, Ruth; Eberl, Christoph; Kraft, Oliver

    2014-01-01

    High-purity Cu samples containing parallel columns of highly aligned nanotwins with median spacing of ∼25 nm were subjected to tension–compression cyclic loading by a high-throughput cyclic testing method. The methodology utilizes gradients in surface strain amplitude of a vibrating cantilever: one along the beam axis, with decreasing strain from the fixed to the free end of the beam, and the other through the foil thickness with decreasing strain from the surface to the neutral axis. Systematic microstructural investigations indicate that nanotwins are not stable under cyclic loading and that the applied strain amplitude has a strong influence on the resulting twin structure. In the highly stressed regions the detwinning process produces a twin free microstructure, allowing for subsequent extrusion and crack formation, and introduces fatal defects into structural parts

  14. Deformation mechanisms of nanotwinned Al

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xinghang [Texas A & M Univ., College Station, TX (United States)

    2016-11-10

    The objective of this project is to investigate the role of different types of layer interfaces on the formation of high density stacking fault (SF) in Al in Al/fcc multilayers, and understand the corresponding deformation mechanisms of the films. Stacking faults or twins can be intentionally introduced (via growth) into certain fcc metals with low stacking fault energy (such as Cu, Ag and 330 stainless steels) to achieve high strength, high ductility, superior thermal stability and good electrical conductivity. However it is still a major challenge to synthesize these types of defects into metals with high stacking fault energy, such as Al. Although deformation twins have been observed in some nanocrystalline Al powders by low temperature, high strain rate cryomilling or in Al at the edge of crack tip or indentation (with the assistance of high stress intensity factor), these deformation techniques typically introduce twins sporadically and the control of deformation twin density in Al is still not feasible. This project is designed to test the following hypotheses: (1) Certain type of layer interfaces may assist the formation of SF in Al, (2) Al with high density SF may have deformation mechanisms drastically different from those of coarse-grained Al and nanotwinned Cu. To test these hypotheses, we have performed the following tasks: (i) Investigate the influence of layer interfaces, stresses and deposition parameters on the formation and density of SF in Al. (ii) Understand the role of SF on the deformation behavior of Al. In situ nanoindentation experiments will be performed to probe deformation mechanisms in Al. The major findings related to the formation mechanism of twins and mechanical behavior of nanotwinned metals include the followings: 1) Our studies show that nanotwins can be introduced into metals with high stacking fault energy, in drastic contrast to the general anticipation. 2) We show two strategies that can effectively introduce growth twins in

  15. Deformation mechanisms of nanotwinned Al

    International Nuclear Information System (INIS)

    Zhang, Xinghang

    2016-01-01

    The objective of this project is to investigate the role of different types of layer interfaces on the formation of high density stacking fault (SF) in Al in Al/fcc multilayers, and understand the corresponding deformation mechanisms of the films. Stacking faults or twins can be intentionally introduced (via growth) into certain fcc metals with low stacking fault energy (such as Cu, Ag and 330 stainless steels) to achieve high strength, high ductility, superior thermal stability and good electrical conductivity. However it is still a major challenge to synthesize these types of defects into metals with high stacking fault energy, such as Al. Although deformation twins have been observed in some nanocrystalline Al powders by low temperature, high strain rate cryomilling or in Al at the edge of crack tip or indentation (with the assistance of high stress intensity factor), these deformation techniques typically introduce twins sporadically and the control of deformation twin density in Al is still not feasible. This project is designed to test the following hypotheses: (1) Certain type of layer interfaces may assist the formation of SF in Al, (2) Al with high density SF may have deformation mechanisms drastically different from those of coarse-grained Al and nanotwinned Cu. To test these hypotheses, we have performed the following tasks: (i) Investigate the influence of layer interfaces, stresses and deposition parameters on the formation and density of SF in Al. (ii) Understand the role of SF on the deformation behavior of Al. In situ nanoindentation experiments will be performed to probe deformation mechanisms in Al. The major findings related to the formation mechanism of twins and mechanical behavior of nanotwinned metals include the followings: 1) Our studies show that nanotwins can be introduced into metals with high stacking fault energy, in drastic contrast to the general anticipation. 2) We show two strategies that can effectively introduce growth twins in

  16. Detwinning through migration of twin boundaries in nanotwinned Cu films under in situ ion irradiation.

    Science.gov (United States)

    Du, Jinlong; Wu, Zaoming; Fu, Engang; Liang, Yanxiang; Wang, Xingjun; Wang, Peipei; Yu, Kaiyuan; Ding, Xiangdong; Li, Meimei; Kirk, Marquis

    2018-01-01

    The mechanism of radiation-induced detwinning is different from that of deformation detwinning as the former is dominated by supersaturated radiation-induced defects while the latter is usually triggered by global stress. In situ Kr ion irradiation was performed to study the detwinning mechanism of nanotwinned Cu films with various twin thicknesses. Two types of incoherent twin boundaries (ITBs), so-called fixed ITBs and free ITBs, are characterized based on their structural features, and the difference in their migration behavior is investigated. It is observed that detwinning during radiation is attributed to the frequent migration of free ITBs, while the migration of fixed ITBs is absent. Statistics shows that the migration distance of free ITBs is thickness and dose dependent. Potential migration mechanisms are discussed.

  17. Optimization of the nanotwin-induced zigzag surface of copper by electromigration

    Science.gov (United States)

    Chen, Hsin-Ping; Huang, Chun-Wei; Wang, Chun-Wen; Wu, Wen-Wei; Liao, Chien-Neng; Chen, Lih-Juann; Tu, King-Ning

    2016-01-01

    By adding nanotwins to Cu, the surface electromigration (EM) slows down. The atomic mobility of the surface step-edges is retarded by the triple points where a twin meets a free surface to form a zigzag-type surface. We observed that EM can alter the zigzag surface structure to optimize the reduction of EM, according to Le Chatelier's principle. Statistically, the optimal alternation is to change an arbitrary (111)/(hkl) zigzag pair to a pair having a very low index (hkl) plane, especially the (200) plane. Using in situ ultrahigh vacuum and high-resolution transmission electron microscopy, we examined the effects of different zigzag surfaces on the rate of EM. The calculated rate of surface EM can be decreased by a factor of ten.By adding nanotwins to Cu, the surface electromigration (EM) slows down. The atomic mobility of the surface step-edges is retarded by the triple points where a twin meets a free surface to form a zigzag-type surface. We observed that EM can alter the zigzag surface structure to optimize the reduction of EM, according to Le Chatelier's principle. Statistically, the optimal alternation is to change an arbitrary (111)/(hkl) zigzag pair to a pair having a very low index (hkl) plane, especially the (200) plane. Using in situ ultrahigh vacuum and high-resolution transmission electron microscopy, we examined the effects of different zigzag surfaces on the rate of EM. The calculated rate of surface EM can be decreased by a factor of ten. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05418d

  18. Passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains with embedded nano-twin bundles

    International Nuclear Information System (INIS)

    Li, Tianshu; Liu, Li; Zhang, Bin; Li, Ying; Yan, Fengkai; Tao, Nairong; Wang, Fuhui

    2014-01-01

    Highlights: • Nanometer-grains (NG) and bundles of nano-twins (NT) is synthesized in 316L. • (NG + NT) and NT enhance the concentration of active Fe Fe in the passive film. • (NG + NT) and NT enhance the passive ability. • A Cr 0 -enriched layer forms at the passive film/metal interface. - Abstract: The passive behavior of a bulk nanostructured 316L austenitic stainless steel consisting of nanometer-sized grains (NG) and nano-twin bundles (NT) are investigated. The electrochemical results indicate that the spontaneous passivation ability and growth rate of passive film are improved. The X-ray photoelectron spectroscopy (XPS) shows that a Cr 0 -enriched layer forms at the passive film/metal interface. More nucleation sites afforded by the nanostructures and the enhanced diffusion rate of charged species across the passive film are believed to be responsible for the improved passive ability. The PDM model is introduced to elaborate the microscopic process of passivation

  19. Surface films and corrosion of copper

    International Nuclear Information System (INIS)

    Hilden, J.; Laitinen, T.; Maekelae, K.; Saario, T.; Bojinov, M.

    1999-03-01

    In Sweden and Finland the spent nuclear fuel is planned to be encapsulated in cast iron canisters that have an outer shield made of copper. The copper shield is responsible for the corrosion protection of the canister construction. General corrosion of the copper is not expected to be the limiting factor in the waste repository environment when estimating the life-time of the canister construction. However, different forms of localised corrosion, i.e. pitting, stress corrosion cracking, or environmentally assisted creep fracture may cause premature failure of the copper shield. Of the probable constituents in the groundwater, nitrites, chlorides, sulphides and carbonates have been suggested to promote localised corrosion of copper. The main assumption made in planning this research program is that the surface films forming on copper in the repository environment largely determine the susceptibility of copper to the different forms of localised corrosion. The availability of reactants, which also may become corrosion rate limiting, is investigated in several other research programs. This research program consists of a set of successive projects targeted at characterising the properties of surface films on copper in repository environment containing different detrimental anions. A further aim was to assess the significance of the anion-induced changes in the stability of the oxide films with regard to localised corrosion of copper. This report summarises the results from a series of investigations on properties of surface films forming on copper in water of pH = 8.9 at temperature of 80 deg C and pressure of 2 MPa. The main results gained so far in this research program are as follows: The surface films forming on copper in the thermodynamic stability region of monovalent copper at 80 deg C consist of a bulk part (about 1 mm thick) which is a good ionic and electronic conductor, and an outer, interfacial layer (0.001 - 0.005 mm thick) which shows p-type semiconductor

  20. Evolution of dislocations and twins in a strong and ductile nanotwinned steel

    International Nuclear Information System (INIS)

    Zhou, P.; Liang, Z.Y.; Liu, R.D.; Huang, M.X.

    2016-01-01

    A twinning-induced plasticity (TWIP) steel was subjected to a simple processing route (i.e. cold rolling followed by a recovery heat treatment) suitable for large-scale industrial production, resulting in the production of a strong and ductile nanotwinned steel. This nanotwinned steel combines high yield strength (1450 MPa), high ultimate tensile strength (1600 MPa) and good ductility (25% total elongation). Detailed transmission electron microscopy observation reveals that the twin volume fraction of the nanotwinned steel remains constant during tensile deformation. This is different to the deformation behaviour of recrystallized TWIP steels whose twin volume fraction increase continuously with strain during tensile deformation. The constant twin volume fraction indicates that a maximum twin volume fraction has been reached during the cold rolling process. In contrast, the dislocation density of the nanotwinned steel increases with strain as measured by the synchrotron X-ray diffraction experiments. In other words, the plastic deformation of the nanotwinned steel is mainly accommodated by glide and multiplication of dislocations. Based on the experimental results, an analytical model was developed to capture the respective effects of dislocations and twins on the strength and ductility of the present nanotwinned steel. The modelling results indicate that the strength is contributed by both twins and dislocations while the ductility is mainly attributed to dislocation multiplication. -- Graphical abstract: (a) TEM bright field image showing intensive nanotwins in the nanotwinned steel. Selected area diffraction pattern obtained within the red circle. (b) The engineering stress–stain curve of the nanotwinned steel. Display Omitted

  1. History-independent cyclic response of nanotwinned metals

    Science.gov (United States)

    Pan, Qingsong; Zhou, Haofei; Lu, Qiuhong; Gao, Huajian; Lu, Lei

    2017-11-01

    Nearly 90 per cent of service failures of metallic components and structures are caused by fatigue at cyclic stress amplitudes much lower than the tensile strength of the materials involved. Metals typically suffer from large amounts of cumulative, irreversible damage to microstructure during cyclic deformation, leading to cyclic responses that are unstable (hardening or softening) and history-dependent. Existing rules for fatigue life prediction, such as the linear cumulative damage rule, cannot account for the effect of loading history, and engineering components are often loaded by complex cyclic stresses with variable amplitudes, mean values and frequencies, such as aircraft wings in turbulent air. It is therefore usually extremely challenging to predict cyclic behaviour and fatigue life under a realistic load spectrum. Here, through both atomistic simulations and variable-strain-amplitude cyclic loading experiments at stress amplitudes lower than the tensile strength of the metal, we report a history-independent and stable cyclic response in bulk copper samples that contain highly oriented nanoscale twins. We demonstrate that this unusual cyclic behaviour is governed by a type of correlated ‘necklace’ dislocation consisting of multiple short component dislocations in adjacent twins, connected like the links of a necklace. Such dislocations are formed in the highly oriented nanotwinned structure under cyclic loading and help to maintain the stability of twin boundaries and the reversible damage, provided that the nanotwins are tilted within about 15 degrees of the loading axis. This cyclic deformation mechanism is distinct from the conventional strain localizing mechanisms associated with irreversible microstructural damage in single-crystal, coarse-grained, ultrafine-grained and nanograined metals.

  2. Structure and energetics of nanotwins in cubic boron nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Shijian, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn; Ma, Xiuliang [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Zhang, Ruifeng, E-mail: sjzheng@imr.ac.cn, E-mail: zrf@buaa.edu.cn [School of Materials Science and Engineering, and International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Huang, Rong [Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062 (China); Taniguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Ikuhara, Yuichi [Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587 (Japan); Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656 (Japan); Beyerlein, Irene J. [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-08-22

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  3. Transpassive Dissolution of Copper and Rapid Formation of Brilliant Colored Copper Oxide Films

    Science.gov (United States)

    Fredj, Narjes; Burleigh, T. David; New Mexico Tech Team

    2014-03-01

    This investigation describes an electrochemical technique for growing adhesive copper oxide films on copper with attractive colors ranging from gold-brown to pearl with intermediate colors from red violet to gold green. The technique consists of anodically dissolving copper at transpassive potentials in hot sodium hydroxide, and then depositing brilliant color films of Cu2O onto the surface of copper after the anodic potential has been turned off. The color of the copper oxide film depends on the temperature, the anodic potential, the time t1 of polarization, and the time t2, which is the time of immersion after potential has been turned off. The brilliant colored films were characterized using glancing angle x-ray diffraction, and the film was found to be primarily Cu2O. Cyclic voltammetry, chronopotentiometry, scanning electron microscopy, and x-ray photoelectron spectroscopy were also used to characterize these films.

  4. Photoelectrochemistry of copper(I) acetylide films electrodeposited onto copper electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zotti, G.; Cattarin, S.; Mengoli, G.; Fleischmann, M.; Peter, L.M.

    1986-01-01

    Films of copper acetylide (Cu/sub 2/C/sub 2/) were grown electrochemically on copper and characterized by transmittance and reflectance techniques. The photoelectrochemical properties of the filmed electrodes in alkaline solution indicate that Cu/sub 2/C/sub 2/ behaves as a p-type semiconducting material (1.5 eV band gap). The photocurrents depend on film thickness and aging and high resistivity or recombination losses limit the quantum yield to some 4% for thicknesses of practical importance (250 nm).

  5. Nanotwin Formation in High-Manganese Austenitic Steels Under Explosive Shock Loading

    Science.gov (United States)

    Canadinc, D.; Uzer, B.; Elmadagli, M.; Guner, F.

    2018-04-01

    The micro-deformation mechanisms active in a high-manganese austenitic steel were investigated upon explosive shock loading. Single system of nanotwins forming within primary twins were shown to govern the deformation despite the elevated temperatures attained during testing. The benefits of nanotwin formation for potential armor materials were demonstrated.

  6. Yield strength of attached copper film

    International Nuclear Information System (INIS)

    Zhang Yan; Zhang Jian-Min

    2011-01-01

    Variation of stress in attached copper film with an applied strain is measured by X-ray diffraction combined with a four-point bending method. A lower slope of the initial elastic segment of the curve of X-ray measured stress versus applied strain results from incomplete elastic strain transferred from the substrate to the film due to insufficiently strong interface cohesion. So the slope of the initial elastic segment of the X-ray stress (or X-ray strain directly) of the film against the substrate applied strain may be used to measure the film-substrate cohesive strength. The yield strength of the attached copper film is much higher than that of the bulk material and varies linearly with the inverse of the film thickness. (condensed matter: structural, mechanical, and thermal properties)

  7. Encapsulation of electroless copper patterns into diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Pimenov, S.M.; Shafeev, G.A.; Lavrischev, S.V. [General Physics Institute, Moscow (Russian Federation)] [and others

    1995-12-31

    The results are reported on encapsulating copper lines into diamond films grown by a DC plasma CVD. The process includes the steps of (i) laser activation of diamond for electroless metal plating, (ii) electroless copper deposition selectively onto the activated surface regions, and (iii) diamond regrowth on the Cu-patterned diamond films. The composition and electrical properties of the encapsulated copper lines were examined, revealing high purity and low electrical resistivity of the encapsulated electroless copper.

  8. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  9. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  10. Nanocarbon-copper thin film as transparent electrode

    International Nuclear Information System (INIS)

    Isaacs, R. A.; Zhu, H.; Preston, Colin; LeMieux, M.; Jaim, H. M. Iftekhar; Hu, L.; Salamanca-Riba, L. G.; Mansour, A.; Zavalij, P. Y.; Rabin, O.

    2015-01-01

    Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors

  11. Nanocarbon-copper thin film as transparent electrode

    Energy Technology Data Exchange (ETDEWEB)

    Isaacs, R. A.; Zhu, H.; Preston, Colin; LeMieux, M.; Jaim, H. M. Iftekhar; Hu, L., E-mail: binghu@umd.edu; Salamanca-Riba, L. G., E-mail: riba@umd.edu [Materials Science and Engineering Department, University of Maryland, College Park, Maryland 20742 (United States); Mansour, A. [Carderock Division, Naval Surface Warfare Center, West Bethesda, Maryland 20817 (United States); Zavalij, P. Y. [Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742 (United States); Rabin, O. [Materials Science and Engineering Department, University of Maryland, College Park, Maryland 20742 (United States); Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)

    2015-05-11

    Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors.

  12. Investigation of interdiffusion in copper-nickel bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abdul-Lettif, Ahmed M. [Physics Department, College of Science, Babylon University, Hilla (Iraq)]. E-mail: abdullettif@yahoo.com

    2007-01-15

    Auger depth profiling technique and X-ray diffraction analysis have been employed to study the interdiffusion in vacuum-deposited copper-nickel bilayer thin films. An adaptation of the Whipple model was used to determine the diffusion coefficients of both nickel in copper and copper in nickel. The calculated diffusion coefficient is (2.0x10{sup -7} cm{sup 2}/s)exp(-1.0 eV/kT) for nickel in copper, and (6x10{sup -8} cm{sup 2}/s)exp(-0.98 eV/kT) for copper in nickel. The difference between the diffusion parameters obtained in the present work and those extracted by other investigators is attributed essentially to the difference in the films microstructure and to the annealing ambient. It is concluded that interdiffusion in the investigated films is described by type-B kinetics in which rapid grain-boundary diffusion is coupled to defect-enhanced diffusion into the grain interior. The present data raise a question about the effectiveness of nickel as a diffusion barrier between copper and the silicon substrate.

  13. Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

    Science.gov (United States)

    Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

    2011-03-01

    The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

  14. Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

    2009-03-15

    In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

  15. Improving hemocompatibility and accelerating endothelialization of vascular stents by a copper-titanium film

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hengquan, E-mail: 99xyxy@163.com [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Pan, Changjiang [Jiangsu Provincial Key Laboratory for Interventional Medical Devices, Huaiyin Institute of Technology, Huaiyin 223033 (China); Zhou, Shijie; Li, Junfeng [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Huang, Nan [Key Laboratory for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, Chengdu 610031 (China); Dong, Lihua [Department of Research & Development, Lifetech Scientific (Shenzhen) Co., Ltd, Shenzhen 518057 (China)

    2016-12-01

    Bio-inorganic films and drug-eluting coatings are usually used to improve the hemocompatibility and inhibit restenosis of vascular stent; however, above bio-performances couldn't combine together with single materials. In the present study, we reported a simple approach to fabricate a metal film with the aim of imparting the stent with good blood compatibility and accelerating endothelialization. The films with various ratios of Cu and Ti were prepared through the physical vapor deposition. Phase structure and element composition were investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The releasing volume of copper ion in Cu/Ti film was determined by immersing test. The hemolysis ratio, platelet adhesion and clotting time were applied to evaluate the hemocompatibility. The proliferative behaviors of endothelial cells and smooth muscle cells under certain copper concentration were investigated in vitro and in vivo. Results indicated that copper-titanium films exhibited good hemocompatibility in vitro; however, the increase of Cu/Ti ratio could lead to increasing hemolysis ratio. Endothelial cells displayed more proliferative than smooth muscle cells when the copper concentration was < 7.5 μg/ml, however both cells tended to apoptosis to some degree when the copper concentration was increased. The complete endothelialization of the film with low copper in vivo was observed at the 2nd week, indicating that the copper-titanium film with the lower copper concentration could promote endothelialization. Therefore, the inorganic copper-titanium film could be potential biomaterials to improve blood compatibility and accelerating endothelialization of vascular stents. - Highlight: • The Cu/Ti film with regulating the various responses of ECs and SMCs has been prepared. • The hemocompatibility of Cu/Ti film is favorable and regulatable. • The volume of copper ion released from film could be designed.

  16. Dislocation mechanism of void growth at twin boundary of nanotwinned nickel based on molecular dynamics simulation

    International Nuclear Information System (INIS)

    Zhang, Yanqiu; Jiang, Shuyong; Zhu, Xiaoming; Zhao, Yanan

    2016-01-01

    Molecular dynamics simulation was performed to investigate dislocation mechanism of void growth at twin boundary (TB) of nanotwinned nickel. Simulation results show that the deformation of nanotwinned nickel containing a void at TB is dominated by the slip involving both leading and trailing partials, where the trailing partials are the dissociation products of stair-rod dislocations formed by the leading partials. The growth of a void at TB is attributed to the successive emission of the leading partials followed by trailing partials as well as the escape of these partial dislocations from the void surface. - Highlights: • Dislocation mechanism of void growth at TB of nanotwinned nickel is investigated. • Deformation of the nanotwinned nickel is dominated by leading and trailing partials. • Growth of void at TB is caused by successive emission and escape of these partials.

  17. Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

    Science.gov (United States)

    Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

    2018-05-01

    Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

  18. Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

    Directory of Open Access Journals (Sweden)

    Jiushuai Xu

    2014-04-01

    Full Text Available Copper films were grown on (3-Mercaptopropyltrimethoxysilane (MPTMS, (3-Aminopropyltriethoxysilane (APTES and 6-(3-(triethoxysilylpropylamino-1,3,5- triazine-2,4-dithiol monosodium (TES self-assembled monolayers (SAMs modified acrylonitrile-butadiene-styrene (ABS substrate via electroless copper plating. The copper films were examined using scanning electron microscopy (SEM and X-ray diffraction (XRD. Their individual deposition rate and contact angle were also investigated to compare the properties of SAMs and electroless copper films. The results indicated that the formation of copper nuclei on the TES-SAMs modified ABS substrate was faster than those on the MPTMS-SAMs and APTES-SAMs modified ABS substrate. SEM images revealed that the copper film on TES-SAM modified ABS substrate was smooth and uniform, and the density of copper nuclei was much higher. Compared with that of TES-SAMs modified resin, the coverage of copper nuclei on MPTMS and APTES modified ABS substrate was very limited and the copper particle size was too big. The adhesion property test demonstrated that all the SAMs enhanced the interfacial interaction between copper plating and ABS substrate. XRD analysis showed that the copper film deposited on SAM-modified ABS substrate had a structure with Cu(111 preferred orientation, and the copper film deposited on TES-SAMs modified ABS substrate is better than that deposited on MPTMS-SAMs or APTES-SAMs modified ABS resins in electromigrtion resistance.

  19. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  20. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  1. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  2. Fabricated super-hydrophobic film with potentiostatic electrolysis method on copper for corrosion protection

    International Nuclear Information System (INIS)

    Wang Peng; Qiu Ri; Zhang Dun; Lin Zhifeng; Hou Baorong

    2010-01-01

    A novel one-step potentiostatic electrolysis method was proposed to fabricate super-hydrophobic film on copper surface. The resulted film was characterized by contact angle tests, Fourier transform infrared spectra (FT-IR), X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FE-SEM) and electrochemical measurements. It could be inferred that the super-hydrophobic property resulted from the flower-like structure of copper tetradecanoate film. In the presence of super-hydrophobic film, the anodic and cathodic polarization current densities are reduced for more than five and four orders of magnitude, respectively. The air trapped in the film is the essential contributor of the anticorrosion property of film for its insulation, the copper tetradecanoate film itself acts as a 'frame' to trap air as well as a coating with inhibition effect. The super-hydrophobic film presents excellent inhibition effect to the copper corrosion and stability in water containing Cl - .

  3. Multilayer TiC/TiN diffusion barrier films for copper

    International Nuclear Information System (INIS)

    Yoganand, S.N.; Raghuveer, M.S.; Jagannadham, K.; Wu, L.; Karoui, A.; Rozgonyi, G.

    2002-01-01

    TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 deg. C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si

  4. Organization of copper nanoclusters in Langmuir–Blodgett films

    Indian Academy of Sciences (India)

    Stable nanoclusters of Cu were synthesized using Langmuir–Blodgett films of octadecylsuccinic acid (ODSA) as template. The Langmuir–Blodgett films of ODSA formed from subphase containing copper ions were first subjected to sulphidation (S) using sodium sulphide and then hydrogenated (H) using hydrogen gas.

  5. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  6. Study of fine films nature on the surface of copper band by photoelectron spectroscopy method

    International Nuclear Information System (INIS)

    Reznichenko, K.N.; Fedorov, V.N.; Shevakin, Yu.F.

    1983-01-01

    The composition of surface films formed on the copper band of industrial production under atmospheric conditions, its changes in thickness and determination of chemical state of the above films are studied. It has been found by the methods of X-ray photoelectronic and Auger-spectroscopy that defect formations on the surface of the copper band of industrial production represent copper oxides in the form of fine films, their change in colour from blue to dark blue probably is determined by different thickness of these defects. The said films on copper have practically identical chemical composition characterized by the presence of unequally valent copper, oxygen in various states (adsorbed and in the form of oxides), carbon and iron. By means of chemical shifts of the line Cu 2psub(3/2) and Ol s the presence in the external part of the film of CuO copper oxide is established and nearer to the interface surface film-metal-of Cu 2 O cuprous oxide which indicates a two-layer surface film structure. The presence of adsorbed carbon and iron in the film composition is a result of surface contamination

  7. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  8. Motion of 1/3<111> dislocations on Σ3 (112) twin boundaries in nanotwinned copper

    Energy Technology Data Exchange (ETDEWEB)

    Lu, N.; Du, K., E-mail: kuidu@imr.ac.cn [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084 (China); Lu, L.; Ye, H. Q. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2014-01-14

    The atomic structure of Σ3 (112) ITBs in nanotwinned Cu is investigated by using aberration-corrected high resolution transmission electron microscopy (HRTEM) and in situ HRTEM observations. The Σ3 (112) ITBs are consisted of periodically repeated three partial dislocations. The in situ HRTEM results show that 1/3[111] partial dislocation moves on the Σ3 (112) incoherent twin boundary (ITB), which was accompanied by a migration of the ITB. A dislocation reaction mechanism is proposed for the motion of 1/3[111] Frank partial dislocation, in which the 1/3[111] partial dislocation exchanges its position with twin boundary dislocations in sequence. In this way, the 1/3[111] dislocation can move on the incoherent twin boundary in metals with low stacking fault energy. Meanwhile, the ITB will migrate in its normal direction accordingly. These results provide insight into the reaction mechanism of 1/3[111] dislocations and ITBs and the associated migration of ITBs.

  9. Method for fabrication of ceramic dielectric films on copper foils

    Science.gov (United States)

    Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

    2015-03-10

    The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

  10. In-situ x-ray absorption study of copper films in ground water solutions

    International Nuclear Information System (INIS)

    Kvashnina, K.O.; Butorin, S.M.; Modin, A.; Soroka, I.; Marcellini, M.; Nordgren, J.; Guo, J.-H.; Werme, L.

    2007-01-01

    This study illustrates how the damage from copper corrosion can be reduced by modifying the chemistry of the copper surface environment. The surface modification of oxidized copper films induced by chemical reaction with Cl - and HCO 3 - in aqueous solutions was monitored by in situ X-ray absorption spectroscopy. The results show that corrosion of copper can be significantly reduced by adding even a small amount of sodium bicarbonate. The studied copper films corroded quickly in chloride solutions, whereas the same solution containing 1.1 mM HCO 3 - prevented or slowed down the corrosion processes

  11. A novel application of the CuI thin film for preparing thin copper nanowires

    International Nuclear Information System (INIS)

    Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

    2005-01-01

    We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

  12. Incommensurateness in nanotwinning models of modulated martensites

    Czech Academy of Sciences Publication Activity Database

    Benešová, B.; Frost, Miroslav; Kampschulte, M.; Melcher, C.; Sedlák, Petr; Seiner, Hanuš

    2015-01-01

    Roč. 92, č. 18 (2015), s. 180101-180101 ISSN 1098-0121 R&D Projects: GA ČR GA14-15264S; GA ČR(CZ) GP14-28306P Grant - others:AV ČR(CZ) DAAD/14/11 Institutional support: RVO:61388998 Keywords : nanotwinning * incommensurateness * intermartensitic transitions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014 http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.180101

  13. Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

    Science.gov (United States)

    Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

    2018-03-01

    Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

  14. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  15. Thermodynamic investigation of the MOCVD of copper films from bis ...

    Indian Academy of Sciences (India)

    Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material.

  16. Measurement of oxygen disorder and nano-twin microstructure associated with columnar defects in YBCO

    International Nuclear Information System (INIS)

    Yan, Y.

    1998-01-01

    Studies of defects generated by high energy (>1 GeV) heavy ion irradiation in high-Tc superconductors have been performed by transmission electron microscopy (TEM). Our study shows that high dose irradiation leads to the formation of nano-twins, by which the columnar defects are connected. An analysis of the local Fourier components of the image intensity in [001] lattice images indicates that these new ''twin'' boundaries are much more diffuse than pre-existing twin boundaries in YBCO. The mechanism of the formation of nano-twin boundaries on {110} planes and their possible relation to superconducting properties are discussed

  17. Nanotwin Detection and Domain Polarity Determination via Optical Second Harmonic Generation Polarimetry.

    Science.gov (United States)

    Ren, Ming-Liang; Agarwal, Rahul; Nukala, Pavan; Liu, Wenjing; Agarwal, Ritesh

    2016-07-13

    We demonstrate that optical second harmonic generation (SHG) can be utilized to determine the exact nature of nanotwins in noncentrosymmetric crystals, which is challenging to resolve via conventional transmission electron or scanned probe microscopies. Using single-crystalline nanotwinned CdTe nanobelts and nanowires as a model system, we show that SHG polarimetry can distinguish between upright (Cd-Te bonds) and inverted (Cd-Cd or Te-Te bonds) twin boundaries in the system. Inverted twin boundaries are generally not reported in nanowires due to the lack of techniques and complexity associated with the study of the nature of such defects. Precise characterization of the nature of defects in nanocrystals is required for deeper understanding of their growth and physical properties to enable their application in future devices.

  18. Self-assembled 1-octadecyl-1H-benzimidazole film on copper ...

    Indian Academy of Sciences (India)

    ature for the formation of a protective film on copper have been established using impedance studies. The. OBI film ... these molecules limits their application in industry.7. Owing to strict ..... and (b) shows AFM images such as 3D-topography,.

  19. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  20. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  1. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  2. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  3. Substrate considerations for graphene synthesis on thin copper films

    International Nuclear Information System (INIS)

    Howsare, Casey A; Robinson, Joshua A; Weng Xiaojun; Bojan, Vince; Snyder, David

    2012-01-01

    Chemical vapor deposition on copper substrates is a primary technique for synthesis of high quality graphene films over large areas. While well-developed processes are in place for catalytic growth of graphene on bulk copper substrates, chemical vapor deposition of graphene on thin films could provide a means for simplified device processing through the elimination of the layer transfer process. Recently, it was demonstrated that transfer-free growth and processing is possible on SiO 2 . However, the Cu/SiO 2 /Si material system must be stable at high temperatures for high quality transfer-free graphene. This study identifies the presence of interdiffusion at the Cu/SiO 2 interface and investigates the influence of metal (Ni, Cr, W) and insulating (Si 3 N 4 , Al 2 O 3 , HfO 2 ) diffusion barrier layers on Cu–SiO 2 interdiffusion, as well as graphene structural quality. Regardless of barrier choice, we find the presence of Cu diffusion into the silicon substrate as well as the presence of Cu–Si–O domains on the surface of the copper film. As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene. (paper)

  4. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  5. Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Szwachta G.

    2016-06-01

    Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

  6. Effect of self purification on the structural optical and electrical properties of copper doped oxidized Zn films

    International Nuclear Information System (INIS)

    Koshy, Obey; Abdul Khadar, M.

    2015-01-01

    The effect of self purification mechanism is studied on oxidized Cu–Zn thin films. Oxidized Cu–Zn thin films were prepared by thermal evaporation on glass substrates. XRD studies indicate that the oxidized Cu–Zn thin films are of hexagonal wurtzite structure. AFM images shows that with increase in copper wt. percent the nanoparticle morphology of oxidized Zn film turned to one dimensional nanorod morphology. XPS spectra of the oxidized Cu–Zn thin films shows the oxidized state of zinc and copper. The PL spectra of oxidized Zn film showed a strong and narrow near band edge emission at 380 nm whereas in the case of oxidized Cu–Zn thin films the emission showed peak near 410 nm corresponding to peak related to copper. With increase in copper content, the intensity of the defect emission decreased due to the self purification mechanism in nanomaterials. In addition the resistivity of doped films increased due to the self purification mechanism in nanomaterials. - Highlights: • Copper doping in ZnO resulted in the increase in blue emission due to defect levels formed. • The intensity of the luminescence peak of the doped film sample decreased and resistivity increased due to the self purification mechanism in nanomaterials.

  7. Motion of 1/3⟨111⟩ dislocations on Σ3 {112} twin boundaries in nanotwinned copper

    Science.gov (United States)

    Lu, N.; Du, K.; Lu, L.; Ye, H. Q.

    2014-01-01

    The atomic structure of Σ3 {112} ITBs in nanotwinned Cu is investigated by using aberration-corrected high resolution transmission electron microscopy (HRTEM) and in situ HRTEM observations. The Σ3 {112} ITBs are consisted of periodically repeated three partial dislocations. The in situ HRTEM results show that 1/3[111] partial dislocation moves on the Σ3 {112} incoherent twin boundary (ITB), which was accompanied by a migration of the ITB. A dislocation reaction mechanism is proposed for the motion of 1/3[111] Frank partial dislocation, in which the 1/3[111] partial dislocation exchanges its position with twin boundary dislocations in sequence. In this way, the 1/3[111] dislocation can move on the incoherent twin boundary in metals with low stacking fault energy. Meanwhile, the ITB will migrate in its normal direction accordingly. These results provide insight into the reaction mechanism of 1/3[111] dislocations and ITBs and the associated migration of ITBs.

  8. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  9. Effects of vacuum processing erbium dideuteride/ditritide films deposited on chromium underlays on copper substrates

    International Nuclear Information System (INIS)

    Provo, J.L.

    1978-01-01

    Thin films of erbium dideuteride/ditritide were experimentally produced on chromium underlays deposited on copper substrates. The chromium underlay is required to prevent erbium occluder/copper substrate alloying which inhibits hydriding. Data taken has shown that vacuum processing affects the erbium/chromium/copper interaction. With an in situ process in which underlay/occluder films are vacuum deposited onto copper substrates and hydrided with no air exposure between these steps, data indicates a minimum of 1500A of chromium is required for optimum hydriding. If films are vacuum deposited as above and air-exposed before hydriding, a minimum of 3000A of chromium was shown to be required for equivalent hydriding. Data suggests that the activation step (600 0 C for 1 hour) required for hydriding the film of the second type is responsible for the difference observed. Such underlay thickness parameters are important, with regard to heat transfer considerations in thin hydride targets used for neutron generation

  10. Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

    International Nuclear Information System (INIS)

    Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun; Seo, Jong Hyun; Choe, HeeHwan; Jeon, Jae-Hong; Hong, Munpyo; Lee, Yong Uk; Winkler, Joerg

    2011-01-01

    Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm 2 to 26 mA/cm 2 , indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO 2 passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

  11. Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Seo, Jong Hyun, E-mail: jhseo@kau.ac.kr [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Choe, HeeHwan; Jeon, Jae-Hong [School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Hong, Munpyo [Display and Semiconductor Physics, Korea University (Korea, Republic of); Lee, Yong Uk [PETEC (The Printable Electronics Technology Centre) (United Kingdom); Winkler, Joerg [PLANSEE Metal GmbH, Metallwerk-Plansee-Str. 71A-6600, Reutte (Austria)

    2011-08-01

    Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm{sup 2} to 26 mA/cm{sup 2}, indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO{sub 2} passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

  12. Electric and electrochemical properties of surface films formed on copper in the presence of bicarbonate anions

    International Nuclear Information System (INIS)

    Sirkiae, P.; Saario, T.; Maekelae, K.; Laitinen, T.; Bojinov, M.

    1999-01-01

    Copper is used as an outer shield of cast iron canisters planned for storage of spent nuclear fuel. The copper shield is responsible for the corrosion protection of the canister. The aim of the present work was to study the influence of bicarbonate (HCO 3 - ) anions on the stability of the copper oxide film. The work consists of a brief literature survey and an experimental part, in which voltammetry, electrochemical impedance spectroscopy and dc resistance measurements via the Contact Electric Resistance (CER) technique were used. The studies reported in the literature indicated that HCO 3 - ions increase the solubility of copper in the stability region of Cu(II). Thus they render the oxide film formed on copper susceptible to local damage and to localised corrosion at high potentials. Unfortunately, despite the great importance of bicarbonates in copper corrosion, most of the environments used in the electrochemical and corrosion studies are not comparable with repository conditions. In the existing studies either the bicarbonate concentrations or pH of the solutions were too high. In addition, no such studies were available, in which not only the effect of carbonate ions, but also possible synergetic effects of them with other aggressive ions would have been clarified. The voltammetric results of the experimental part of this work point to a bilayer structure of the anodic film on copper in neutral solutions containing HCO 3 - ions. The transport of ionic defects through a thin continuous p-type semiconductor layer was concluded to be the rate limiting step of the anodic oxidation of copper in the stability region of monovalent copper and in the mixed oxide (Cu(I)/Cu(II) oxide) region. Films formed in the divalent copper region did not show well-pronounced semiconductor behaviour. Substantial evidence was found in the voltammetric, CER and impedance results for the increased defectiveness of the anodic film in the Cu(II) region. The oxidation rate of copper in

  13. Electric and electrochemical properties of surface films formed on copper in the presence of bicarbonate anions

    Energy Technology Data Exchange (ETDEWEB)

    Sirkiae, P.; Saario, T.; Maekelae, K.; Laitinen, T.; Bojinov, M. [VTT Manufacturing Technology, Espoo (Finland)

    1999-11-01

    Copper is used as an outer shield of cast iron canisters planned for storage of spent nuclear fuel. The copper shield is responsible for the corrosion protection of the canister. The aim of the present work was to study the influence of bicarbonate (HCO{sub 3}{sup -}) anions on the stability of the copper oxide film. The work consists of a brief literature survey and an experimental part, in which voltammetry, electrochemical impedance spectroscopy and dc resistance measurements via the Contact Electric Resistance (CER) technique were used. The studies reported in the literature indicated that HCO{sub 3}{sup -} ions increase the solubility of copper in the stability region of Cu(II). Thus they render the oxide film formed on copper susceptible to local damage and to localised corrosion at high potentials. Unfortunately, despite the great importance of bicarbonates in copper corrosion, most of the environments used in the electrochemical and corrosion studies are not comparable with repository conditions. In the existing studies either the bicarbonate concentrations or pH of the solutions were too high. In addition, no such studies were available, in which not only the effect of carbonate ions, but also possible synergetic effects of them with other aggressive ions would have been clarified. The voltammetric results of the experimental part of this work point to a bilayer structure of the anodic film on copper in neutral solutions containing HCO{sub 3}{sup -}ions. The transport of ionic defects through a thin continuous p-type semiconductor layer was concluded to be the rate limiting step of the anodic oxidation of copper in the stability region of monovalent copper and in the mixed oxide (Cu(I)/Cu(II) oxide) region. Films formed in the divalent copper region did not show well-pronounced semiconductor behaviour. Substantial evidence was found in the voltammetric, CER and impedance results for the increased defectiveness of the anodic film in the Cu(II) region. The

  14. Tension Tests of Copper Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  15. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  16. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  17. Morphology and thermal stability of Ti-doped copper nitride films

    International Nuclear Information System (INIS)

    Fan Xiaoyan; Wu Zhiguo; Li Huajun; Geng Baisong; Li Chun; Yan Pengxun

    2007-01-01

    A weakly Ti-doped copper nitride (Cu 3 N) film was prepared by cylindrical magnetron sputtering. The XPS results indicate that Ti atoms do not substitute for the Cu atoms but probably locate at the grain boundaries. The columnar grains size is about half of that of the undoped Cu 3 N film and the surface is smoother. For weakly Ti-doped Cu 3 N films, a dense layer appears on top of the columnar crystals. The RMS of the Cu film formed by annealing of the weakly Ti-doped Cu 3 N film is more than twice larger than that of the film before annealing. Compared with the undoped Cu 3 N film, it possesses fine thermal stability both in vacuum and in atmosphere

  18. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  19. Mechanical Properties of Oxide Films on Electrolytic In-process Dressing (ELID) Copper-based Grinding Wheel

    Science.gov (United States)

    Kuai, J. C.; Wang, J. W.; Jiang, C. R.; Zhang, H. L.; Yang, Z. B.

    2018-05-01

    The mechanical properties of oxide films on copper based grinding wheel were studied by nanoindentation technique. The analysis of load displacement shows that the creep phenomenon occurs during the loading stage. Results show that the oxide film and the matrix have different characteristics, and the rigidity of the copper based grinding wheel is 0.6-1.3mN/nm, which is weaker than that of the matrix; the hardness of the oxide film is 2000-2300MPa, which is higher than the matrix; and the elastic modulus of the oxide film is 100-120GPa, also higher than the matrix.

  20. Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

    KAUST Repository

    Islam, Md. Anisul

    2016-03-10

    In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased. © 2015 IEEE.

  1. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Lu Yinxiang

    2010-01-01

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 10 4 to 2.1 x 10 5 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  2. Decomposition of poly(amide-imide) film enameled on solid copper wire using atmospheric pressure non-equilibrium plasma.

    Science.gov (United States)

    Sugiyama, Kazuo; Suzuki, Katsunori; Kuwasima, Shusuke; Aoki, Yosuke; Yajima, Tatsuhiko

    2009-01-01

    The decomposition of a poly(amide-imide) thin film coated on a solid copper wire was attempted using atmospheric pressure non-equilibrium plasma. The plasma was produced by applying microwave power to an electrically conductive material in a gas mixture of argon, oxygen, and hydrogen. The poly(amide-imide) thin film was easily decomposed by argon-oxygen mixed gas plasma and an oxidized copper surface was obtained. The reduction of the oxidized surface with argon-hydrogen mixed gas plasma rapidly yielded a metallic copper surface. A continuous plasma heat-treatment process using a combination of both the argon-oxygen plasma and argon-hydrogen plasma was found to be suitable for the decomposition of the poly(amide-imide) thin film coated on the solid copper wire.

  3. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  4. Stablization of Nanotwinned Microstructures in Stainless Steels Through Alloying and Microstructural Design

    Science.gov (United States)

    2013-08-23

    Effects of carbon content, deformation, and interfacial energetics on carbide precipitation and corrosion sensitization in 304 stainless steel , Acta...Alumina- Forming Austenitic Stainless Steels Strengthened by LAves Phase and MC Carbide Precipitates , Metallurgical and Materials Transactions A...nano- precipitate engineering---of nanotwinned stainless steels . This preliminary work has provided valuable insight into the mechanisms responsible

  5. Quantitative microstructure characterization of self-annealed copper films with electron backscatter diffraction

    DEFF Research Database (Denmark)

    Pantleon, Karen; Gholinia, A.; Somers, Marcel A. J.

    2008-01-01

    Electron backscatter diffraction (EBSD) was applied to analyze cross sections of self-annealed copper electrodeposits, for which earlier the kinetics of self-annealing had been investigated by in-situ X-ray diffraction (XRD). The EBSD investigations on the grain size, grain boundary character...... and crystallographic texture of copper films with different thicknesses essentially supplement results from in-situ XRD. Twin relations between neighboring grains were identified from the orientation maps and the observed twin chains confirm multiple twinning in copper electrodeposits as the mechanism...

  6. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  7. Influence of Heat Treatment on the Morphologies of Copper Nanoparticles Based Films by a Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2017-01-01

    Full Text Available We have investigated the influence of heat treatment on the morphologies of copper nanoparticles based films on glass slides by a spin coating method. The experiments show that heat treatment can modify the sizes and morphologies of copper nanoparticles based films on glass slides. We suggest that through changing the parameters of heat treatment process may be helpful to vary the scattering and absorbing intensity of copper nanoparticles when used in energy harvesting/conversion and optical devices.

  8. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  9. Evolution of the microstructure in electrochemically deposited copper films at room temperature

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2007-01-01

    The room temperature evolution of the microstructure in copper electrodeposits (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time with an unprecedented time resolution. Independent of the copper...... the crystallographic texture changes by a multiple twinning mechanism. The kinetics of self-annealing is strongly affected by the thickness of the deposit. Storage of the copper films at sub-zero temperatures effectively hinders self-annealing and does not affect the kinetics of self-annealing upon reheating to room...... temperature....

  10. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    Science.gov (United States)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  11. Cost-effective disposable thiourea film modified copper electrode for capacitive immunosensor

    International Nuclear Information System (INIS)

    Limbut, Warakorn; Thavarungkul, Panote; Kanatharana, Proespichaya; Wongkittisuksa, Booncharoen; Asawatreratanakul, Punnee; Limsakul, Chusak

    2010-01-01

    Cost-effective disposable electrodes were fabricated from copper clad laminate, usually used for printed circuit board (PCB) in electronic industries, by using dry film photoresist. Electro-oxidation (anodisation) was employed to obtain a good formation of thiourea film on the electrode surface. The affinity binding pair of carcinoembryonic antigen (CEA) and anti-carcinoembryonic antigen (anti-CEA) was used as a model system. Anti-CEA was immobilized on thiourea film via covalent coupling. This modified electrode was incorporated with a capacitive system for CEA analysis. This capacitive immunosensor provided a linear range between 0.01 and 10 ng ml -1 with a detection limit of 10 pg ml -1 . When applied to analyze CEA in serum samples, the results agreed well with the enzyme linked fluorescent assay (ELFA) technique (P > 0.05). The proposed strategy for the preparation of disposable modified copper electrode is very cost effective and simple. Moreover, it provides good reproducibility. This technique can easily be applied to immobilize other biological sensing elements for biosensors development.

  12. Decouple electronic and phononic transport in nanotwinned structures: a new strategy for enhancing the figure-of-merit of thermoelectrics.

    Science.gov (United States)

    Zhou, Yanguang; Gong, Xiaojing; Xu, Ben; Hu, Ming

    2017-07-20

    Thermoelectric (TE) materials manifest themselves to enable direct conversion of temperature differences to electric power and vice versa. Though remarkable advances have been achieved in the past decades for various TE systems, the energy conversion efficiency of TE devices, which is characterized by a dimensionless figure-of-merit (ZT = S 2 σT/(κ el + κ ph )), generally remains a poor factor that severely limits TE devices' competitiveness and range of employment. The bottleneck for substantially boosting the ZT coefficient lies in the strong interdependence of the physical parameters involved in electronic (S and σ, and κ el ) and phononic (κ ph ) transport. Herein, we propose a new strategy of incorporating nanotwinned structures to decouple electronic and phononic transport. Combining the new concept of nanotwinned structures with the previously widely used nanocrystalline approach, the power factor of the nanotwin-nanocrystalline Si heterostructures is enhanced by 120% compared to that of bulk crystalline Si, while the lattice thermal conductivity is reduced to a level well below the amorphous limit, yielding a theoretical limit of 0.52 and 0.9 for ZT coefficient at room temperature and 1100 K, respectively. This value is almost two orders of magnitude larger than that for bulk Si and twice that for polycrystalline Si. Even for the experimentally obtained nanotwin-nanocrystalline heterostructures (e.g. grain size of 5 nm), the ZT coefficient can be as high as 0.26 at room temperature and 0.7 at 1100 K, which is the highest ZT value among all Si-based bulk nanostructures found thus far. Such substantial improvement stems from two aspects: (1) the improvement in the power factor is caused due to an increase in the Seebeck coefficient (degeneracy of the band valley) and the enhancement of electrical conductivity (the reduction of the effective band mass) and (2) the significant reduction of the lattice thermal conductivity is mainly caused due to the

  13. Structural and phase changes in copper-fullerene films by ion implantation and annealing

    International Nuclear Information System (INIS)

    Shpilevsky, E.M.; Baran, L.V.; Okatova, G.P.; Jakimovich, A.V.

    2001-01-01

    The structural and phase changes and the electrical properties of copper - fullerene (Cu-C 60 ) films by the ion implantation(B + , E=80 keV, D 5·10 21 m -2 ) and the thermal annealing are described. We found the copper-fullerene solid supersaturated solution formed in process of the two-component films obtaining. The result of the thermal annealing is the phase segregation of fullerene. It has been established the ion implantation adduces to the partial fragmentation of fullerene, to the destruction of the C 60 molecules and to the formation of the CuB 24 , B 25 C and B 4 C phases

  14. Computational Investigation of Effects of Grain Size on Ballistic Performance of Copper

    Science.gov (United States)

    He, Ge; Dou, Yangqing; Guo, Xiang; Liu, Yucheng

    2018-01-01

    Numerical simulations were conducted to compare ballistic performance and penetration mechanism of copper (Cu) with four representative grain sizes. Ballistic limit velocities for coarse-grained (CG) copper (grain size ≈ 90 µm), regular copper (grain size ≈ 30 µm), fine-grained (FG) copper (grain size ≈ 890 nm), and ultrafine-grained (UG) copper (grain size ≈ 200 nm) were determined for the first time through the simulations. It was found that the copper with reduced grain size would offer higher strength and better ductility, and therefore renders improved ballistic performance than the CG and regular copper. High speed impact and penetration behavior of the FG and UG copper was also compared with the CG coppers strengthened by nanotwinned (NT) regions. The comparison results showed the impact and penetration resistance of UG copper is comparable to the CG copper strengthened by NT regions with the minimum twin spacing. Therefore, besides the NT-strengthened copper, the single phase copper with nanoscale grain size could also be a strong candidate material for better ballistic protection. A computational modeling and simulation framework was proposed for this study, in which Johnson-Cook (JC) constitutive model is used to predict the plastic deformation of Cu; the JC damage model is to capture the penetration and fragmentation behavior of Cu; Bao-Wierzbicki (B-W) failure criterion defines the material's failure mechanisms; and temperature increase during this adiabatic penetration process is given by the Taylor-Quinney method.

  15. Optical and infrared spectroscopic studies of chemical sensing by copper phthalocyanine thin films

    International Nuclear Information System (INIS)

    Singh, Sukhwinder; Tripathi, S.K.; Saini, G.S.S.

    2008-01-01

    Thin films of copper phthalocyanine have been deposited on KBr and glass substrates by thermal evaporation method and characterized by the X-ray diffraction and optical absorption techniques. The observed X-ray pattern suggests the presence of α crystalline phase of copper phthalocyanine in the as-deposited thin films. Infrared spectra of thin films on the KBr pallet before and after exposure to the vapours of ammonia and methanol have been recorded in the wavenumber region of 400-1650 cm -1 . The observed infrared bands also confirm the α crystalline phase. On exposure, change in the intensity of some bands is observed. A new band at 1385 cm -1 , forbidden under ideal D 4h point group symmetry, is also observed in the spectra of exposed thin films. These changes in the spectra are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v . Axial ligation of the vapour molecules on fifth coordination site of the metal ion is responsible for lowering of the molecular symmetry

  16. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  17. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  18. Influence of titanium oxide films on copper nucleation during electrodeposition

    International Nuclear Information System (INIS)

    Chang, Hyun K.; Choe, Byung-Hak; Lee, Jong K.

    2005-01-01

    Copper electrodeposition has an important industrial role because of various interconnects used in electronic devices such as printed wire boards. With an increasing trend in device miniaturization, in demand are void-free, thin copper foils of 10 μm thick or less with a very low surface profile. In accordance, nucleation kinetics of copper was studied with titanium cathodes that were covered with thin, passive oxide films of 2-3 nm. Such an insulating oxide layer with a band gap of 3 eV is supposed to nearly block charge transfer from the cathode to the electrolyte. However, significant nucleation rates of copper were observed. Pipe tunneling mechanism along a dislocation core is reasoned to account for the high nucleation kinetics. A dislocation core is proposed to be a high electron tunneling path with a reduced energy barrier and a reduced barrier thickness. In supporting the pipe tunneling mechanism, both 'in situ' and 'ex situ' scratch tests were performed to introduce extra dislocations into the cathode surface, that is, more high charge paths via tunneling, before electrodeposition

  19. Cathodic reduction of the duplex oxide films formed on copper in air with high relative humidity at 60 deg C

    International Nuclear Information System (INIS)

    Seo, M.; Ishikawa, Y.; Kodaira, M.; Sugimoto, A.; Nakayama, S.; Watanabe, M.; Furuya, S.; Minamitani, R.; Miyata, Y.; Nishikata, A.; Notoya, T.

    2005-01-01

    The cathodic reduction of duplex air-formed oxide film on copper was performed at a constant current density of i c = -50 μA cm -2 in deaerated 0.1 M KCl solution to investigate the sequence of cathodic reduction of each oxide layer and its mechanism. The single-phase thick CuO film on copper was also cathodically reduced at i c = -50 μA cm -2 or -2.5 mA cm -2 . The surface characterizations of the air-formed oxide film and single-phase CuO film before cathodic reduction and after partial or complete cathodic reduction were performed by XPS and X-ray diffraction, respectively. The two plateau regions appeared in the potential vs. time curve during cathodic reduction of the duplex air-formed oxide film on copper, while one plateau region was observed in the potential-time curve during cathodic reduction of the single-phase CuO film on copper. The potential in the first plateau region for the air-formed film coincided with that in the plateau region for the CuO film. The results of XPS and X-ray diffraction suggested that in the first plateau region, the outer CuO layer is directly reduced to metallic Cu, while in the second plateau region, the inner Cu 2 O layer is reduced to metallic Cu

  20. New barrierless copper-alloy film for future applications

    Science.gov (United States)

    Lin, Chon-Hsin Lin

    2015-09-01

    Since Cu metallization results in a conductivity and an electromigration resistance greater than those of Al, it has become popular for making Si-based interconnects for numerous devices in the field of microelectronics. Following the current trend of miniaturization required for most electronic components, there is a greater need for further size reduction in Si-based devices. The most critical side effect of size reduction is the increase in electronic scattering and resistivity when the barrier-layer thickness is further reduced. To explore advanced Cu-metallization methods and to develop a more economical manufacturing process for Cu-alloy films, the development of Cu materials having better quality and higher thermal stability becomes imperative for the metallization and annealing processes. For this purpose, we first fabricated Cu(GeNx) films and examined their thermal stability and electrical reliability after either cyclic or isothermal annealing. The excellent thermal and electrical properties make these new Cu-alloy films highly promising for applications that require more reliable and inexpensive copper interconnects. In this study, we fabricated Cu alloy films by doping a minute amount of Ge or GeNx, respectively, into the Cu films via barrierless Cu metallization, an inexpensive manufacturing method. Using these newly fabricated alloy films, we were able to eliminate or at least substantially reduce the detrimental interaction between the alloy and the barrierless Si substrate. The Cu(GeNx) films also exhibited high thermal stability, low resistivity and leakage current, and long time-dependent dielectric breakdown (TDDB) lifetimes, making such novel films a candidate for high-quality, economical, and more reliable Cu interconnects.

  1. Work function measurements of copper nanoparticle intercalated polyaniline nanocomposite thin films

    Science.gov (United States)

    Patil, U. V.; Ramgir, Niranjan S.; Bhogale, A.; Debnath, A. K.; Muthe, K. P.; Gadkari, S. C.; Kothari, D. C.

    2017-05-01

    The nature of contact between the electrode and the sensing material plays a crucial role in governing the sensing mechanism. Thin films of polyaniline (PANI) and copper-polyaniline nanocomposite (NC) have been deposited at room temperatures by in-situ oxidative polymerization of aniline in the presence of Cu nanoparticles. For sensing applications a thin film Au (gold) ˜100 nm is deposited and used as a conducting electrode. To understand the nature of contact (i.e., ohmic or Schottky) the work function of the conducting polyaniline and nanocomposite films were measured using Kelvin Probe method. I-V characteristics of PANI and NC films investigated at room temperatures further corroborates and confirms the formation of Ohmic contact as evident from work function measurements.

  2. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gallardo-Vega, C.; Cruz, W. de la

    2006-01-01

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10 -2 to 1.3 x 10 -1 Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu 3 N) and x = 0.25 (Cu 4 N) when the nitrogen pressure is 1.3 x 10 -1 and 5 x 10 -2 Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33

  3. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

    2006-09-15

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

  4. Copper thin film for RFID UHF antenna on flexible substrate

    International Nuclear Information System (INIS)

    Tran, Nhan Ai; Tran, Huy Nam; Dang, Mau Chien; Fribourg-Blanc, Eric

    2010-01-01

    A process flow using photolithography and sputtering was studied for copper antenna fabrication on thin poly(ethylene terephthalate) (PET) substrate. The lift-off route was chosen for its flexibility at laboratory scale. It was clarified that the cleaning of PET is an important step that necessitates mild oxygen plasma etching. Then copper is sputter deposited after photolithographic definition of the antenna. Care is necessary since PET, as a very flexible substrate, is temperature sensitive. The temperature increase generated by the impact of deposited copper should be maintained below the glass transition temperature of the polymer to avoid detrimental deformation. dc power of 40 to 50 W was found to be the maximum possible sputtering power for commercial PET. It was found that the resistivity of the thin film is below two times the bulk resistivity of copper for a deposition pressure below 4×10 −3  mbar and thickness above 450 nm. These results enable the reliable fabrication of copper RFID UHF antennae on a PET substrate for further testing of new tag designs. The present paper summarizes the effort to test new designs of antennae for RadioFrequency IDentification (RFID) Ultra High Frequency (UHF) tags, for use in various applications (e.g. object tracking and environment monitoring) in Vietnam

  5. Localized etching of an insulator film coated on a copper wire using an atmospheric-pressure microplasma jet.

    Science.gov (United States)

    Yoshiki, Hiroyuki

    2007-04-01

    Atmospheric-pressure microplasma jets (APmicroPJs) of Ar and ArO(2) gases were generated from the tip of a stainless steel surgical needle having outer and inner diameters of 0.4 and 0.2 mm, respectively, with a rf excitation of 13.56 MHz. The steel needle functions both as a powered electrode and a gas nozzle. The operating power is 1.2-6 W and the corresponding peak-to-peak voltage Vp.p. is about 1.5 kV. The APmicroPJ was applied to the localized etching of a polyamide-imide insulator film (thickness of 10 microm) of a copper winding wire of 90 microm diameter. The insulator film around the copper wire was completely removed by the irradiated plasma from a certain direction without fusing the wire. The removal time under the Ar APmicroPJ irradiation was only 3 s at a rf power of 4 W. Fluorescence microscopy and scanning electron microscope images reveal that good selectivity of the insulator film to the copper wire was achieved. In the case of ArO(2) APmicroPJ irradiation with an O(2) concentration of 10% or more, the removed copper surface was converted to copper monoxide CuO.

  6. Localized etching of an insulator film coated on a copper wire using an atmospheric-pressure microplasma jet

    International Nuclear Information System (INIS)

    Yoshiki, Hiroyuki

    2007-01-01

    Atmospheric-pressure microplasma jets (APμPJs) of Ar and Ar/O 2 gases were generated from the tip of a stainless steel surgical needle having outer and inner diameters of 0.4 and 0.2 mm, respectively, with a rf excitation of 13.56 MHz. The steel needle functions both as a powered electrode and a gas nozzle. The operating power is 1.2-6 W and the corresponding peak-to-peak voltage Vp.p. is about 1.5 kV. The APμPJ was applied to the localized etching of a polyamide-imide insulator film (thickness of 10 μm) of a copper winding wire of 90 μm diameter. The insulator film around the copper wire was completely removed by the irradiated plasma from a certain direction without fusing the wire. The removal time under the Ar APμPJ irradiation was only 3 s at a rf power of 4 W. Fluorescence microscopy and scanning electron microscope images reveal that good selectivity of the insulator film to the copper wire was achieved. In the case of Ar/O 2 APμPJ irradiation with an O 2 concentration of 10% or more, the removed copper surface was converted to copper monoxide CuO

  7. Sol-gel prepared B2O3-SiO2 thin films for protection of copper substrates

    International Nuclear Information System (INIS)

    Gouda, M.; Ahmed, M.S.; Shahin, M.A.

    2000-01-01

    Full text.Borosilicate coating has potential for applications in the field of electronics, e.g., as passivation layers. One of the main difficulties for applying these films by the conventional melting process is the extensive volatilization of B 2 O 3 from the melt. In this work transparent borosilicate films of 2OB 2 O3.8OSiO 2 (in mole %). Prepared by the sole gel method, were applied onto copper substrates by dip-coating technique. The transparency of these films was very sensitive to the humidity of the atmosphere during the coating process. Transparent films were obtained below 20% relative humidity at 20 celsius degree. High temperature oxidation tests, at about 585 celsius degree stream of air, showed that the sol-gel prepared 2OB 2 O 3 .8OSiO 2 thin films are protective coating for copper substrates under fairly severe temperature gradient and oxidizing atmosphere. It was found that the protective action of these films depends on the film thickness

  8. The measurement of conductivity of copper indium disulphide thin films against temperature and thickness

    International Nuclear Information System (INIS)

    Yussof Wahab; Roslinda Zainal; Samsudi Sakrani

    1996-01-01

    Ternary semiconductor copper indium disulphide (CuInS sub 2) thin films have been prepared by thermal evaporation. Three stacked layers of film starting with copper, indium and finally sulphur was deposited on glass substrate in the thickness ratio of 1: 1: I0. The films were then annealed in carbon block by method known as encapsulated sulphurization at 350 degree C for 4 hours. The XRD analysis for four samples of thickness of 449.5, 586, 612 and 654 nm showed that stoichiometric CuInS sub 2, were formed at this annealing condition. The electrical conductivity of CuInS sub 2 thin films were measured against temperature from 150K to 300K. The conductivity values were between 76.6 Sm sup -1 to 631.26 Sm sup -1 and the result showed that it increase exponentially with temperature for the above temperature range. The resulting activation energies were found to be in the range 0.05 to 0.08 eV. This suggested that hopping mechanism predominant to the conducting process. It also found that the conductivity decreased with increasing film thickness

  9. Preparation of copper doped DLC films by DC PE-CVD method

    International Nuclear Information System (INIS)

    Marton, M.; Vojs, M.; Kotlar, M.; Michniak, P.; Flickyngerova, S.; Vesely, M.; Redhammer, R.

    2012-01-01

    We used PECVD method for deposition of Cu incorporated DLC thin films from CH 4 /Ar gas mixture. The size of nanoparticles varied with changing the deposition conditions in the range of tenth to hundreds of nm. After annealing process, new small Cu particles appeared in the space between the as deposited ones, and all the particles were distributed more homogenous within the films. The resistivity of the DLC films decreased first with adding of copper to 10 to 6·10 3 Ωcm, and second with the annealing process to 4·10 -2 to 3 Ωcm. Raman spectra show the tendency of DLCs to become more graphitic with increasing annealing temperature, which may be one possible contribution to increased conductivity of the annealed Cu-DLC films. (authors)

  10. Seeding of silicon by copper ion implantation for selective electroless copper plating

    Energy Technology Data Exchange (ETDEWEB)

    Bhansali, S.; Sood, D.K.; Zmood, R.B. [Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)

    1993-12-31

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.

  11. Seeding of silicon by copper ion implantation for selective electroless copper plating

    Energy Technology Data Exchange (ETDEWEB)

    Bhansali, S; Sood, D K; Zmood, R B [Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)

    1994-12-31

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.

  12. Seeding of silicon by copper ion implantation for selective electroless copper plating

    International Nuclear Information System (INIS)

    Bhansali, S.; Sood, D.K.; Zmood, R.B.

    1993-01-01

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm 2 using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm 2 for 'seed' formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by 'scotch tape test'. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs

  13. Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films

    International Nuclear Information System (INIS)

    Mhamdi, A.; Mimouni, R.; Amlouk, A.; Amlouk, M.; Belgacem, S.

    2014-01-01

    Highlights: • The sprayed Cu-doped ZnO thin layers films were well crystallised in hexagonal wurtzite phase. • Nanoncrystallites on clusters were observed whose density decreases especially at 2% Cu content. • This parallel circuit R–C represents the contribution of the grain boundaries delineating the oriented columnar microcrystallites along c-axis. - Abstract: Copper-doped zinc oxide thin films (ZnO:Cu) at different percentages (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Cu concentration on the structural, morphology and optical properties of the ZnO:Cu thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. The Film surface was analyzed by contact atomic force microscopy (AFM) in order to understand the effect of the doping on the surface structure. Doping by copper resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin layers. Finally, all results have been discussed in terms of the copper doping concentration

  14. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    Science.gov (United States)

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  15. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  16. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  17. Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

    Science.gov (United States)

    Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

    2018-05-21

    In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. The strength limits of ultra-thin copper films

    Energy Technology Data Exchange (ETDEWEB)

    Wiederhirn, Guillaume

    2007-07-02

    Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

  19. Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

    Science.gov (United States)

    Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

    2018-01-01

    The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

  20. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  1. Film formation of non-planar phthalocyanines on copper(i) iodide

    OpenAIRE

    Ramadan, A. J.; Fearn, S.; Jones, T. S. (Tim S.); Heutz, S.; Rochford, L. A. (Luke A.)

    2016-01-01

    Structural templating is frequently used in organic photovoltaic devices to control the properties of the functional layers and therefore improve efficiencies. Modification of the substrate temperatures has also been shown to impact the structure and morphology of phthalocyanine thin films. Here we combine templating by copper iodide and high substrate temperature growth and study its effect on the structure and morphology of two different non-planar phthalocyanines, chloroaluminium (ClAlPc) ...

  2. Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

    Science.gov (United States)

    Savitskii, D. P.; Stanishevskii, Ya. M.

    2018-01-01

    Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap E g = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is R a = 2.46 μm.

  3. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    Al-Mamun; Islam, A.B.M.O.

    2004-09-01

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu 2-x Se thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu 2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se. (author)

  4. Laser-induced chemical liquid deposition of discontinuous and continuous copper films

    Czech Academy of Sciences Publication Activity Database

    Ouchi, A.; Bastl, Zdeněk; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2007-01-01

    Roč. 201, č. 8 (2007), s. 4728-4733 ISSN 0257-8972 R&D Projects: GA AV ČR 1ET400400413 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40320502; CEZ:AV0Z40720504 Keywords : copper films * laser photolysis * Cu(II) acetylacetonate * chemical liquid deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.678, year: 2007

  5. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  6. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  7. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  8. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2013-12-15

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules’ GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  9. Engineering kinetic barriers in copper metallization

    International Nuclear Information System (INIS)

    Huang Hanchen; Wei, H.L.; Woo, C.H.; Zhang, X.X.

    2002-01-01

    In metallization processes of integrated circuits, it is desirable to deposit the metal lines (aluminum or copper) fast and at low temperatures. However, the lines (films) usually consist of undesirable columns and voids, because of the absence of sufficient diffusion--a direct result of large kinetic barriers. Following the proposal and realization of the three-dimensional Ehrlich-Schwoebel (3D ES) barrier, we present here a method to engineer this kinetic barrier so as to improve quality of deposited copper films. We deposit copper films by magnetron sputtering, characterize the film structure and texture by using the scanning electron microscope and the x-ray diffraction, respectively. Taking indium as surfactant during copper deposition, we have achieved much better density and bottom coverage of copper filled trenches. The characterizations show that the improvement is the result of the 3D ES barrier reduction caused by indium addition. Engineering the 3D ES barrier therefore leads to improved film quality

  10. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  11. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  12. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  13. Nano-twin mediated plasticity in carbon-containing FeNiCoCrMn high entropy alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Z. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Materials Science and Engineering Department, University of Tennessee, Knoxville, TN 37996 (United States); Parish, C.M. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Bei, H., E-mail: beih@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2015-10-25

    Equiatomic FeNiCoCrMn alloy has been reported to exhibit promising strength and ductility at cryogenic temperature and deformation mediated by nano-twining appeared to be one of the main reasons. We use the FeNiCoCrMn alloy as a base alloy to seek further improvement of its mechanical properties by alloying additional elements, i.e., interstitial carbon. The effects of carbon on microstructures, mechanical properties and twinning activities were investigated in two different temperatures (77 and 293 K). With addition of 0.5 at% C, the high entropy alloy still remains entirely single phase face-centered cubic (FCC) crystal structure. The materials can be cold rolled and recrystallized to produce a microstructure with equiaxed grains. Both strain hardening rate and strength are enhanced while high uniform elongations to fracture (∼70% at 77 K and ∼40% at 293 K) are still maintained. The increased strain hardening and strength could be caused by the promptness of deformation twinning in C-containing high entropy alloys. - Highlights: • Interstitial atom C was successfully added into FeNiCoCrMn high entropy alloys. • The strain hardening rate and strength are enhanced in the C-containing alloy. • The increased strain-hardening and strength are caused by the nano-twinning.

  14. Eco-nano composite films containing copper as potential antimicrobial active packaging

    Energy Technology Data Exchange (ETDEWEB)

    Bruna, Julio E.; Gonzalez, Valeska; Rodriguez, Francisco; Guarda, Abel; Galotto, Maria Jose, E-mail: julio.bruna@usach.cl [Center for the Development of Nanoscience and Nanotechnology, Packaging Laboratory, University of Santiago de Chile. Santiago (Chile)

    2011-07-01

    The antimicrobial efficiency of Cellulose Acetate/MMTCu and Chitosan/MMTCu nano composites against Escherichia Coli 0157:H7 n/t has been studied in the present work. The MMT modified with copper were obtained using cation interchange in solution and the nano composites films were prepared using casting solution technique, being the biodegradable polymer (Cellulose Acetate or Chitosan) the main component and the montmorillonite modified with copper, the minority component. Characterization of MMTCu and the nano composites (CA/MMTCu and Ch/MMTCu), were carried out using XRD, AA, TGA, DSC and microbiological analysis. The nano composites showed to be more stable at higher temperature, resulting from the incorporation of MMTCu into the polymer. On the other hand, the results indicated that the antibacterial effect of nano composite increased with the proportion of MMTCu added. (author)

  15. Eco-nano composite films containing copper as potential antimicrobial active packaging

    International Nuclear Information System (INIS)

    Bruna, Julio E.; Gonzalez, Valeska; Rodriguez, Francisco; Guarda, Abel; Galotto, Maria Jose

    2011-01-01

    The antimicrobial efficiency of Cellulose Acetate/MMTCu and Chitosan/MMTCu nano composites against Escherichia Coli 0157:H7 n/t has been studied in the present work. The MMT modified with copper were obtained using cation interchange in solution and the nano composites films were prepared using casting solution technique, being the biodegradable polymer (Cellulose Acetate or Chitosan) the main component and the montmorillonite modified with copper, the minority component. Characterization of MMTCu and the nano composites (CA/MMTCu and Ch/MMTCu), were carried out using XRD, AA, TGA, DSC and microbiological analysis. The nano composites showed to be more stable at higher temperature, resulting from the incorporation of MMTCu into the polymer. On the other hand, the results indicated that the antibacterial effect of nano composite increased with the proportion of MMTCu added. (author)

  16. Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

    Science.gov (United States)

    Loranca-Ramos, F. E.; Diliegros-Godines, C. J.; Silva González, R.; Pal, Mou

    2018-01-01

    Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV-vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017-1018 cm-3, resistivity (ρ) = 1.74-2.14 Ωcm and carrier mobility (μ) = 4.7-9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm-3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10-3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

  17. Chemical reaction of atomic oxygen with evaporated films of copper, part 4

    Science.gov (United States)

    Fromhold, A. T.; Williams, J. R.

    1990-01-01

    Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

  18. Fabrication of Elemental Copper by Intense Pulsed Light Processing of a Copper Nitrate Hydroxide Ink.

    Science.gov (United States)

    Draper, Gabriel L; Dharmadasa, Ruvini; Staats, Meghan E; Lavery, Brandon W; Druffel, Thad

    2015-08-05

    Printed electronics and renewable energy technologies have shown a growing demand for scalable copper and copper precursor inks. An alternative copper precursor ink of copper nitrate hydroxide, Cu2(OH)3NO3, was aqueously synthesized under ambient conditions with copper nitrate and potassium hydroxide reagents. Films were deposited by screen-printing and subsequently processed with intense pulsed light. The Cu2(OH)3NO3 quickly transformed in less than 100 s using 40 (2 ms, 12.8 J cm(-2)) pulses into CuO. At higher energy densities, the sintering improved the bulk film quality. The direct formation of Cu from the Cu2(OH)3NO3 requires a reducing agent; therefore, fructose and glucose were added to the inks. Rather than oxidizing, the thermal decomposition of the sugars led to a reducing environment and direct conversion of the films into elemental copper. The chemical and physical transformations were studied with XRD, SEM, FTIR and UV-vis.

  19. Colloidal and electrochemical aspects of copper-CMP

    Science.gov (United States)

    Sun, Yuxia

    Copper based interconnects with low dielectric constant layers are currently used to increase interconnect densities and reduce interconnect time delays in integrated circuits. The technology used to develop copper interconnects involves Chemical Mechanical Planarization (CMP) of copper films deposited on low-k layers (silica or silica based films), which is carried out using slurries containing abrasive particles. One issue using such a structure is copper contamination over dielectric layers (SiO2 film), if not reduced, this contamination will cause current leakage. In this study, the conditions conducive to copper contamination onto SiO2 films during Cu-CMP process were studied, and a post-CMP cleaning technique was discussed based on experimental results. It was found that the adsorption of copper onto a silica surface is kinetically fast (electrocoagulation was investigated to remove both copper and abrasive slurry particles simultaneously. For effluent containing ˜40 ppm dissolved copper, it was found that ˜90% dissolved copper was removed from the waste streams through electroplating and in-situ chemical precipitation. The amount of copper removed through plating is impacted by membrane surface charge, type/amount of complexing agents, and solid content in the slurry suspension. The slurry particles can be removed ˜90% within 2 hours of EC through multiple mechanisms.

  20. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  1. Recovery of electrical resistance in copper films on polyethylene terephthalate subjected to a tensile strain

    International Nuclear Information System (INIS)

    Glushko, O.; Marx, V.M.; Kirchlechner, C.; Zizak, I.; Cordill, M.J.

    2014-01-01

    Substantial recovery (decrease) of electrical resistance during and after unloading is demonstrated for copper films on polyethylene terephthalate substrates subjected to a tensile strain with different peak values. Particularly, the films strained to 5% exhibit full resistance recovery after unloading despite clearly visible plastic deformation of the film. The recovery of electrical resistance in connection with the mechanical behavior of film/substrate couple is discussed with the help of in situ scanning electron microscopy and X-ray diffraction analysis. - Highlights: • Tensile tests on 200 nm Cu films on PET substrate are performed. • Electrical resistance is recorded in-situ during loading and unloading. • Significant recovery (decrease) of resistance is observed during and after unloading. • Films strained to 5% demonstrate full resistance recovery. • Viscoelastic relaxation of PET is responsible for recovery of Cu film resistance

  2. Superhydrophobic Cu{sub 2}S@Cu{sub 2}O film on copper surface fabricated by a facile chemical bath deposition method and its application in oil-water separation

    Energy Technology Data Exchange (ETDEWEB)

    Pi, Pihui, E-mail: phpi@scut.edu.cn; Hou, Kun; Zhou, Cailong; Li, Guidong; Wen, Xiufang; Xu, Shouping; Cheng, Jiang; Wang, Shuangfeng

    2017-02-28

    Highlights: • A superhydrophobic film with macro/nano structure was fabricated on copper surface. • The as-prepared film shows outstanding water repellency and long-term storage stability. • The same method was used to fabricate superhydrophobic/superoleophilic copper mesh. • The obtained mesh could realize separation of various oily sewages with separation efficiency above 94%. - Abstract: Cu{sub 2}S and Cu{sub 2}O composite (Cu{sub 2}S@Cu{sub 2}O) film with micro/nano binary structure was created on copper surface using the mixing solution of sodium thiosulphate and copper sulfate by a facile chemical bath deposition method. After modification with low-cost polydimethylsioxane (PDMS), the superhydrophobic Cu{sub 2}S@Cu{sub 2}O film was obtained. The as-prepared film shows outstanding water repellency with a water contact angle larger than 150° and long-term storage stability. The geometric morphology and chemical composition of the film were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS) and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), respectively. Moreover, the same method was used to fabricate superhydrophobic/superoleophilic copper mesh, and it could realize separation of various oily sewages with separation efficiency above 94%. This strategy has potential to fabricate the practical superhydrophobic Cu{sub 2}S@Cu{sub 2}O film on copper surface on a large scale due to its simplicity and low cost.

  3. Dissociation of dilute immiscible copper alloy thin films

    International Nuclear Information System (INIS)

    Barmak, K.; Lucadamo, G. A.; Cabral, C. Jr.; Lavoie, C.; Harper, J. M. E.

    2000-01-01

    The dissociation behavior of dilute, immiscible Cu-alloy thin films is found to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. Available thermodynamic and tracer diffusion data shed further light on alloy behavior. Eight alloying elements were selected for these studies, with five elements from groups 5 and 6, two from group 8, and one from group 11 of the periodic table. They are respectively V, Nb, Ta, Cr, Mo, Fe, Ru, and Ag. The progress of precipitation in approximately 500-nm-thick alloy films, containing 2.5-3.8 at. % solute, was followed with in situ resistance and stress measurements as well as with in situ synchrotron x-ray diffraction. In addition, texture analysis and transmission electron microscopy were used to investigate the evolution of microstructure and texture of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900 degree sign C. However, in most cases, substantial reductions in resistivity of the films took place below 400 degree sign C, at temperatures of interest to copper metallization schemes for silicon chip technology. (c) 2000 American Institute of Physics

  4. SBA-15 mesoporous silica free-standing thin films containing copper ions bounded via propyl phosphonate units - preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Laskowski, Lukasz, E-mail: lukasz.laskowski@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Laskowska, Magdalena, E-mail: magdalena.laskowska@onet.pl [H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Krakow, ul. Radzikowskiego 152 (Poland); Jelonkiewicz, Jerzy, E-mail: jerzy.jelonkiewicz@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Dulski, Mateusz, E-mail: mateusz.dulski@us.edu.pl [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Materials Science, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Wojtyniak, Marcin, E-mail: marcin.wojtyniak@us.edu.pl [University of Silesia, Institute of Physics, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Fitta, Magdalena, E-mail: magdalena.fitta@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland); Balanda, Maria, E-mail: Maria.Balanda@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland)

    2016-09-15

    The SBA-15 silica thin films containing copper ions anchored inside channels via propyl phosphonate groups are investigated. Such materials were prepared in the form of thin films, with hexagonally arranged pores, laying rectilinear to the substrate surface. However, in the case of our thin films, their free standing form allowed for additional research possibilities, that are not obtainable for typical thin films on a substrate. The structural properties of the samples were investigated by X-ray reflectometry, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The molecular structure was examined by Raman spectroscopy supported by numerical simulations. Magnetic measurements (SQUID magnetometry and EPR spectroscopy) showed weak antiferromagnetic interactions between active units inside silica channels. Consequently, the pores arrangement was determined and the process of copper ions anchoring by propyl phosphonate groups was verified in unambiguous way. Moreover, the type of interactions between magnetic atoms was determined. - Highlights: • Functionalized free-standing SBA-15 thin films were synthesized for a first time. • Thin films synthesis procedure was described in details. • Structural properties of the films were thoroughly investigated and presented. • Magnetic properties of the novel material was investigated and presented.

  5. Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

    Directory of Open Access Journals (Sweden)

    Udomdej Pakdee

    2017-01-01

    Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

  6. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  7. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  8. Dependence of dislocation structure on orientation and slip systems in highly oriented nanotwinned Cu

    DEFF Research Database (Denmark)

    Lu, Qiuhong; You, Zesheng; Huang, Xiaoxu

    2017-01-01

    slip Mode I and II are active with dominance of Mode II. In structures deformed at 45° dislocations from slip Modes I, II and III are identified, where Mode III dislocations consist of partial dislocations moving along the TBs and full dislocations inside the twin lamellae gliding on the slip planes...... parallel to the twin plane. The analysis of the dislocation structures illustrate the strong correlation between active slip systems and the dislocation structure and the strong effect of slip mode anisotropy on both the flow stress and strain hardening rate of nanotwinned Cu....

  9. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  10. Superstrengthening Bi2Te3 through Nanotwinning

    Science.gov (United States)

    Li, Guodong; Aydemir, Umut; Morozov, Sergey I.; Wood, Max; An, Qi; Zhai, Pengcheng; Zhang, Qingjie; Goddard, William A.; Snyder, G. Jeffrey

    2017-08-01

    Bismuth telluride (Bi2Te3 ) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi2Te3 can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi2Te3 is the weak van der Waals interaction between the Te1 coupling two Te 1 - Bi - Te 2 - Bi - Te 1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi2Te3 (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi2Te3 TE semiconductors for high-performance TE devices.

  11. Deposition and characterisation of copper for high density interconnects

    International Nuclear Information System (INIS)

    McCusker, N.

    1999-09-01

    Copper has been deposited by sputtering and investigated for application as high density interconnects, with a view to maximising its performance and reliability. A sputter deposition process using gettering has been developed, which produces consistently pure, low resistivity films. A relationship between film thickness and resistivity has been explained by studying the grain growth process in copper films using atomic force microscopy. The Maydas-Shatzkes model has been used to separate the contributions of grain boundary and surface scattering to thin film resistivity, in copper and gold. Stress and texture in copper film have been studied. Annealing has been used to promote grain growth and texture development. Electromigration has been studied in copper and aluminium interconnects using a multi-line accelerated test set-up. A difference in failure distributions and void morphologies has been explained by an entirely different damage mechanism. The importance of surface/interface migration in electromigration damage of copper lines has been established and explained using a grain boundary-grooving model. A tantalum overlayer was found to extend the lifetime of copper lines. A composite sputtering target has been used to deposit copper/zirconium alloy films. The composition of the alloys was studied by Rutherford backscattering, Auger and secondary neutral mass spectrometry. The alloy films had an improved electromigration lifetime. A surface controlled mechanism is proposed to explain the advantage. A metal oxide semiconductor (MOS) capacitor technique is used to investigate barrier reliability. Tungsten is shown to be an effective diffusion barrier for copper, up to 700 deg. C. (author)

  12. Grain Boundary Engineering of Electrodeposited Thin Films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein

    is not yet well-understood. This, at least partly, owes to the lack of robust characterization methods for analyzing the nature of grain boundaries including the grain boundary plane characteristics, until recently. In the past decade, significant improvements in the 2-dimensional and 3-dimensional analysis...... of the favorable boundaries that break the network of general grain boundaries. Successful dedicated synthesis of a textured nickel film fulfilling the requirements of grain boundary engineered materials, suggests improved boundary specific properties. However, the textured nickel film shows fairly low...... thermal stability and growth twins annihilate by thermal treatment at 600 degree C. In contrast, for oriented grains, growth nano-twins which are enveloped within columnar grains show a high thermal stability even after thermal treatment at 600 degree C. In order to exploit the high thermal...

  13. Solution-processed copper-nickel nanowire anodes for organic solar cells

    Science.gov (United States)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  14. Construction of wettability gradient surface on copper substrate by controlled hydrolysis of poly(methyl methacrylate–butyl acrylate) films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yong, E-mail: Yong.Z@mail.scut.edu.cn [Guangzhou Panyu Polytechnic, Guangzhou 511483 (China); Cheng, Jiang; Yang, Zhuo-ru [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China)

    2014-10-01

    We report a gradient wettability surface on copper slide prepared by a simple controlled ester group hydrolysis procedure of poly(methyl methacrylate–butyl acrylate) [P (MMA-BA)] films coated on the copper substrate. In the method, sodium hydroxide solutions are selected to prepare surface gradient wettability on P (MMA-BA) films. The P (MMA-BA) copolymers with different MMA contents are first synthesized by a conventional free atom radical solution polymerization method. The transfer of surface chemical composition from the ester group to acid salt is achieved by hydrolysis in NaOH solution. The effects of different concentrations of NaOH solution and reaction times on the physicochemical properties of the resulting surfaces are studied. The field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) results show that the varying concentration along the substrate length is only attributed to the hydrolysis reaction of ester groups. The hydrolysis causes insignificant change on the morphology of the original film on the copper substrate. In addition, it is found that the MMA copolymer content has a significant influence on the concentration of ester groups on the outermost surface and thus important for forming the slope gradients.

  15. Study of the role of the interface between niobium films and copper RF resonators

    CERN Document Server

    Benvenuti, Cristoforo; Campisi, I E; Darriulat, Pierre; Peck, M A; Russo, R

    1997-01-01

    Niobium-coated copper resonators are usually produced with an oxide interface between the film and the substrate. This oxide has two sources: the passivation layer inevitably formed on the surface of the cavity after chemical preparation before coating, and the niobium oxide which builds up on the surface of the cathode when it is exposed to air, and is transferred to the cavity surface during coa ting. The oxide layer may influence both the purity and the structural properties of the film, and in turn its RF behaviour. To study its effect, some cavities have been coated with a special two-cath ode sputtering system, allowing for a complete removal of both oxide layers by sputter-etching. For comparison, a few cavities have also been produced with the same coating system without sputter-etch ing, or with a controlled oxidation of the copper surface of the cavity after sputter-etching. Two cavities have also been produced without oxide interface using Kr and Ne as sputter gas instead of Ar .

  16. Surface structure of ultrathin metal films deposited on copper single crystals

    International Nuclear Information System (INIS)

    Butterfield, M.T.

    2000-04-01

    Ultrathin films of Cobalt, Iron and Manganese have been thermally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural techniques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fcc Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer by layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect overlayer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fcc Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300 deg. C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30 deg. (√3 x √3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction. (author)

  17. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Porcile-Saavedra, P.F. [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Trejo-Cruz, C. [Department of Physics, Faculty of Science, University of Biobío, Avenue Collao 1202, Box 5C, Concepción 4051381 (Chile)

    2016-07-15

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films. - Graphical abstract: “Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution” by M. G. Sandoval-Paz, C. A. Rodríguez, P. F. Porcile-Saavedra, C. Trejo-Cruz. Display Omitted - Highlights: • Copper (I) selenide thin films were obtained by chemical bath deposition. • Orthorhombic to cubic phase change was induced by varying the reaction solution pH. • Orthorhombic phase is obtained mainly from a hydroxides cluster mechanism. • Cubic phase is obtained mainly from an ion by ion mechanism. • Structural, optical and electrical properties are presented as a function of pH.

  18. Microstructural characterization of copper corrosion in aqueous and soil environments

    International Nuclear Information System (INIS)

    Srivastava, A.; Balasubramaniam, R.

    2005-01-01

    Scanning electron microscopy has been used to investigate the surface films on pure copper after exposure to different aqueous and soil environments, containing chloride, sulfide and ammonium salts. The morphology of the films formed on copper surface in aqueous and soil environments was different for the same amount of pollutants. The surface films formed in soil environments were not homogenous in contrast to the films formed in aqueous environments. The damaging effect of chloride ions and the benign role of sulfide ions were revealed in both the environments. Local compositional analysis confirmed that the surface films formed on copper consisted predominantly of copper and oxygen

  19. Fatigue crack closure in submicron-thick freestanding copper films

    International Nuclear Information System (INIS)

    Kondo, Toshiyuki; Ishii, Takaki; Hirakata, Hiroyuki; Minoshima, Kohji

    2015-01-01

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–K max (maximum stress intensity factor) region of K max <4.5 MPam 1/2 . The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor K op was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔK eff =K max −K op was then evaluated. The R-dependence of the da/dN vs. ΔK eff relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔK eff is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films

  20. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    International Nuclear Information System (INIS)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-01-01

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O_2−CF_4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO_2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  1. Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser

    Energy Technology Data Exchange (ETDEWEB)

    He, Shutong [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Amoruso, Salvatore [Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Pang, Dongqing; Wang, Chingyue; Hu, Minglie, E-mail: huminglie@tju.edu.cn [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China)

    2016-04-28

    We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu{sub 2}O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, t{sub w}, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on t{sub w} is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu{sub 2}O nanoparticles (size of ≈20 nm) and Cu{sub 2}O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation.

  2. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Wulff, H.; Rebl, H.; Zietz, C.; Arndt, K.; Bogdanowicz, R.; Nebe, B.; Bader, R.; Podbielski, A.; Hubička, Zdeněk; Hippler, R.

    2011-01-01

    Roč. 31, č. 7 (2011), s. 1512-1519 ISSN 0928-4931 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100520 Keywords : implant coating * titanium-copper film * pulsed magnetron sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.686, year: 2011

  3. Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

    International Nuclear Information System (INIS)

    Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

    1982-01-01

    A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

  4. Anodic polarization behavior and film breakdown potential of pure copper in the simulated geological environment containing carbonate

    International Nuclear Information System (INIS)

    Kawasaki, Manabu; Taniguchi, Naoki; Naito, Morimasa

    2009-01-01

    In order to clarify the influence of environmental factors on the corrosion behavior of copper overpacks in oxidizing environment, potentiodynamic and potentiostatic anodic polarization tests were performed in carbonate aqueous solutions at 80degC. As the results, the passivation was promoted and film breakdown was suppressed in higher carbonate concentrations, in lower chloride ion concentrations, and in higher pH conditions. The sulfate ion tended to promote the film breakdown of copper. The effects of the composition of the test solutions on the anodic polarization curve of copper in bentonite/sand mixture were quite smaller than those in simple aqueous solution. By comparison with previous data for lower temperature condition, it was clarified that passivation of copper was promoted in higher temperature condition, but breakdown potential, Eb was independent of temperature. The Eb, was expressed as a function of the ratio of aggressive ion and inhibiting ion such as [Cl - ]/[HCO 3 - ] and [SO 4 2- ]/[HCO 3 - ], and it was confirmed that the Eb was lowered with increasing the ratio. When the ratio exceeds a certain value, the Eb was no longer able to be determined since the anodic polarization curve becomes active dissolution type. The lower limit of Eb in passive type region was estimated to be about -200 mV vs. SCE. The results of potentiostatic tests showed that pitting corrosion or non-uniform corrosion was observed at the potentials over Eb or second current peak potentials in anodic polarization curve. (author)

  5. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  6. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gong, Lijun [Research and Development Department, Guangzhou Fastprint Circuit Tech Co., Ltd., Guangzhou 510663 (China); He, Wei, E-mail: heweiz@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Research and Development Department, Guangdong Guanghua Sci-Tech Co., Ltd., Shantou 515000 (China)

    2017-07-31

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O{sub 2}−CF{sub 4} low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO{sub 2} by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  7. Deformation twins and related softening behavior in nanocrystalline Cu–30% Zn alloy

    International Nuclear Information System (INIS)

    Bahmanpour, Hamed; Youssef, Khaled M.; Horky, Jelena; Setman, Daria; Atwater, Mark A.; Zehetbauer, Michael J.; Scattergood, Ronald O.; Koch, Carl C.

    2012-01-01

    Nanocrystalline Cu–30% Zn samples were produced by high energy ball milling at 77 K and room temperature. Cryomilled flakes were further processed by ultrahigh strain high pressure torsion (HPT) or room temperature milling to produce bulk artifact-free samples. Deformation-induced grain growth and a reduction in twin probability were observed in HPT consolidated samples. Investigations of the mechanical properties by hardness measurements and tensile tests revealed that at small grain sizes of less than ∼35 nm Cu–30% Zn deviates from the classical Hall–Petch relation and the strength of nanocrsytalline Cu–30% Zn is comparable with that of nanocrystalline pure copper. High resolution transmission electron microscopy studies show a high density of finely spaced deformation nanotwins, formed due to the low stacking fault energy of 14 mJ m –2 and low temperature severe plastic deformation. Possible softening mechanisms proposed in the literature for nanotwin copper are addressed and the twin-related softening behavior in nanotwinned Cu is extended to the Cu–30% Zn alloy based on detwinning mechanisms.

  8. Selective tuning of magnetization dynamics damping in Tb- and Nd-doped permalloy ultrathin films by adjacent copper nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dong, E-mail: physzd@yahoo.com [School of Physics Science and Information Engineering, Key Lab. of Communication Science and Technology of Shandong Province, Liaocheng University, Liaocheng 252059 (China); Physics Department, Southeast University, Nanjing 211189 (China); Yue, Jinjin; Jiang, Sheng [Physics Department, Southeast University, Nanjing 211189 (China); Zhai, Ya, E-mail: yazhai@seu.edu.cn [Physics Department, Southeast University, Nanjing 211189 (China); National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China); Du, Jun; Zhai, Hongru [National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-07-05

    The mechanism of angular dependence of ferromagnetic resonance linewidth of dilute Tb and Nd doping in permalloy thin films with various thicknesses of adjacent copper layer are investigated by experimental approach and theoretical fitting by considering the contributions from intrinsic spin-orbit coupling, inhomogeneous broadening and two-magnon scattering. The results show that the damping coefficient α, by intrinsic contribution extracted from ferromagnetic resonance linewidth, increases from 0.0153 to 0.0218 for NiFe–Nd films and from 0.0193 to 0.0261 for NiFe–Tb films resulting from the spin pumping effect at the interface of NiFe–Nd(or Tb)/Cu as the thickness of copper layer increases from 1 nm to 15 nm. The surface magnetic anisotropy constant K{sub 1} is obtained and shows an decreasing trend from positive to negative, which implies that the copper layer could reduce the surface perpendicular anisotropy. The fitting spin mixed conductivity is (2.72 ± 0.18) × 10{sup 15} cm{sup −2} at NiFe–Tb/Cu interface and (2.4 ± 0.2) × 10{sup 15} cm{sup −2} at Cu/NiFe–Nd interface, respectively. - Highlights: • The thickness of Cu buffer layer affects the surface perpendicular anisotropy of FM layer. • The interface roughness could be investigated by using FMR linewidth. • The damping coefficient is enhanced by spin-pumping effect.

  9. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

    2014-01-01

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

  10. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    International Nuclear Information System (INIS)

    Abdel Rafea, M; Roushdy, N

    2009-01-01

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu 2 O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu 2 O is the most probable crystalline phase in the film, while Cu 2 O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu 2 O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  11. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  12. Polypyrrole electrodeposited on copper from an aqueous phosphate solution: Corrosion protection properties

    OpenAIRE

    Redondo, Clara; Breslin, Carmel B.

    2007-01-01

    Highly adherent and homogenous polypyrrole films were electrodeposited at copper from a dihydrogen phosphate solution. The polypyrrole films were electrosynthesized in the overoxidized state by cycling the copper electrode from –0.4 to 1.8 V (SCE) in a pyrrole-containing phosphate solution. The growth of the polypyrrole films was facilitated by the initial oxidation of the copper electrode in the phosphate solution to generate a mixed copper–phosphate, copper oxide or hydroxide layer. This la...

  13. Thin films of copper antimony sulfide: A photovoltaic absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  14. Anti-corrosion film formed on HAl77-2 copper alloy surface by aliphatic polyamine in 3 wt.% NaCl solution

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yinzhe; Yang, Dong; Zhang, Daquan, E-mail: zhdq@sh163.net; Wang, Yizhen; Gao, Lixin

    2017-01-15

    Highlights: • Properties of ADDD meet environment-friendly requirements. • ADDD’s inhibition efficiency is better than BTA at the low concentration. • ADDD adsorbs on the copper alloy surface by via the N atom in its amino group using flat mode. - Abstract: The corrosion inhibition of a polyamine compound, N-(4-amino-2, 3-dimethylbutyl)-2, 3-dimethylbutane-1, 4-diamine (ADDD), was investigated for HAl77-2 copper alloy in 3 wt.% NaCl solution. Electrochemical measurements, scanning electron microscopy (SEM), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FT-IR) techniques were employed for this research. The results show that ADDD strongly suppresses the corrosion of HAl77-2 alloy. The inhibition efficiency of ADDD is 98.6% at 0.5 mM, which is better than benzotriazole (BTAH) at the same concentration. Polarization curves indicate that ADDD is an anodic type inhibitor. Surface analysis suggests that a protective film is formed via the interaction of ADDD and copper. FT-IR reveals that the inhibition mechanism of ADDD is dominated by chemisorption onto the copper alloy surface to form an inhibition film. Furthermore, quantum chemical calculation and molecular dynamics (MD) simulations methods show that ADDD adsorbs on HAl77-2 surface via amino group in its molecule.

  15. Selective LPCVD growth of graphene on patterned copper and its growth mechanism

    Science.gov (United States)

    Zhang, M.; Huang, B.-C.; Wang, Y.; Woo, J. C. S.

    2016-12-01

    Copper-catalyzed graphene low-pressure chemical-vapor deposition (LPCVD) growth has been regarded as a viable solution towards its integration to CMOS technology, and the wafer-bonding method provides a reliable alternative for transferring the selective graphene grown on a patterned metal film for IC manufacturing. In this paper, selective LPCVD graphene growth using patterned copper dots has been studied. The Raman spectra of grown films have demonstrated large dependence on the growth conditions. To explain the results, the growth mechanisms based on surface adsorption and copper-vapor-assisted growth are investigated by the comparison between the blanket copper films with/without the additional copper source. The copper vapor density is found to be critical for high-quality graphene growth. In addition, the copper-vapor-assisted growth is also evidenced by the carbon deposition on the SiO2 substrate of the patterned-copper-dot sample and chamber wall during graphene growth. This growth mechanism explains the correlation between the growth condition and Raman spectrum for films on copper dots. The study on the copper-catalyzed selective graphene growth on the hard substrate paves the way for the synthesis and integration of the 2D material in VLSI.

  16. Nucleation and growth of copper oxide films in MOCVD processes using the β-ketoiminate precursor 4,4'-(1,2-ethanediyldinitrilo)bis(2-pentanonate) copper(II)

    International Nuclear Information System (INIS)

    Condorelli, G.G.; Malandrino, G.; Fragala, I.L.

    1999-01-01

    The MOCVD of CuO has attracted much attention because of its application in high-T c superconducting films and gas sensors. This work focuses on the potential of a β-ketoiminate copper complex as an alternative MOCVD source to β-diketonate complexes. Particular attention has been given to factors such as texturing, roughness, and grain size of the deposit. (orig.)

  17. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

    KAUST Repository

    Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

    2013-01-01

    The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  18. Co-sputter deposited nickel-copper bimetallic nanoalloy embedded carbon films for electrocatalytic biomarker detection

    Science.gov (United States)

    Shiba, Shunsuke; Kato, Dai; Kamata, Tomoyuki; Niwa, Osamu

    2016-06-01

    We report the fabrication of a nickel (Ni)-copper (Cu) bimetallic nanoalloy (~3 nm) embedded carbon film electrode with the unbalanced magnetron (UBM) co-sputtering technique, which requires only a one-step process at room temperature. Most of each nanoalloy body was firmly embedded in a chemically stable carbon matrix with an atomically flat surface (Ra: 0.21 nm), suppressing the aggregation and/or detachment of the nanoalloy from the electrode surface. The nanoalloy size and composition can be controlled simply by individually controlling the target powers of carbon, Ni and Cu, which also makes it possible to localize the nanoalloys near the electrode surface. This electrode exhibited excellent electrocatalytic activity for d-mannitol, which should be detected with a low detection limit in urine samples for the diagnosis of severe intestinal diseases. With a Ni/Cu ratio of around 64/36, the electrocatalytic current per metal area was 3.4 times larger than that of an alloy film electrode with a similar composition (~70/30). This improved electrocatalytic activity realized higher stability (n = 60, relative standard deviation (RSD): 4.6%) than the alloy film (RSD: 32.2%) as demonstrated by continuous measurements of d-mannitol.We report the fabrication of a nickel (Ni)-copper (Cu) bimetallic nanoalloy (~3 nm) embedded carbon film electrode with the unbalanced magnetron (UBM) co-sputtering technique, which requires only a one-step process at room temperature. Most of each nanoalloy body was firmly embedded in a chemically stable carbon matrix with an atomically flat surface (Ra: 0.21 nm), suppressing the aggregation and/or detachment of the nanoalloy from the electrode surface. The nanoalloy size and composition can be controlled simply by individually controlling the target powers of carbon, Ni and Cu, which also makes it possible to localize the nanoalloys near the electrode surface. This electrode exhibited excellent electrocatalytic activity for d

  19. Radiation damage in nanostructured metallic films

    Science.gov (United States)

    Yu, Kaiyuan

    High energy neutron and charged particle radiation cause microstructural and mechanical degradation in structural metals and alloys, such as phase segregation, void swelling, embrittlement and creep. Radiation induced damages typically limit nuclear materials to a lifetime of about 40 years. Next generation nuclear reactors require materials that can sustain over 60 - 80 years. Therefore it is of great significance to explore new materials with better radiation resistance, to design metals with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe. Such systems obtain high volume fraction of boundaries, which are considered sinks to radiation induced defects. From the viewpoint of nanomechanics, it is of interest to investigate the plastic deformation mechanisms of nanostructured films, which typically show strong size dependence. By controlling the feature size (layer thickness, twin spacing and grain size), it is applicable to picture a deformation mechanism map which also provides prerequisite information for subsequent radiation hardening study. And from the viewpoint of radiation effects, it is of interest to explore the fundamentals of radiation response, to examine the microstructural and mechanical variations of irradiated nanometals and to enrich the design database. More importantly, with the assistance of in situ techniques, it is appealing to examine the defect generation, evolution, annihilation, absorption and interaction with internal interfaces (layer interfaces, twin boundaries and grain boundaries). Moreover, well-designed nanostructures can also verify the speculation that radiation induced defect density and hardening show clear size dependence. The focus of this thesis lies in the radiation response of Ag/Ni multilayers and nanotwinned Ag

  20. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

    International Nuclear Information System (INIS)

    Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

    1994-01-01

    Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC 50 in daphnia and algae, and feeding studies in rats

  1. Rapid growth of diamond-like-carbon films by copper vapor laser ablation

    International Nuclear Information System (INIS)

    McLean, W.; Warner, B.E.; Havstad, M.A.

    1995-04-01

    Visible light from a copper vapor laser (CVL) operating with 510 and 578 nm radiation (intensity ratio approximately 2:1), an average power of 100 W, a pulse duration of 50 ns, and a repetition frequency of 4.4 kHz has been shown to produce high quality diamond-like-carbon (DLC) films at fluences between 2x10 8 and 5x10 10 W/cm 2 . Maximum deposition rates of 2000 μm·cm 2 /h were obtained at 5x10 8 W/cm 2 . DLC films with hardness values of approximately 60 GPa were characterized by a variety of techniques to confirm DLC character, hydrogen content, and surface morphology. The presence of C 2 in the vapor plume was confirmed by the presence of the C 2 Swan bands in emission spectra obtained during the process. Economic implications of process scale-up to industrially meaningful component sizes are presented

  2. Improvement of oxidation resistance of copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lin, M.C. [Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, No. 250, Wu-Hsing Street, Taipei 110, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-10-01

    Graphical abstract: Results of glancing incident angle diffraction (GIXD) show the bare-Cu specimen was attacked by oxidation, whereas the coated-Cu specimens prevented from this problem. Highlights: Black-Right-Pointing-Pointer Deposition of Al{sub 2}O{sub 3} films on pure copper by an atomic layer deposition (ALD) technique. Black-Right-Pointing-Pointer Analysis of properties of the films coated at various substrate temperatures using the ALD technique. Black-Right-Pointing-Pointer Identification of the improvement of oxidation resistance of pure copper by the ALD-Al{sub 2}O{sub 3} films. Black-Right-Pointing-Pointer Assessment of the durability of the ALD-Al{sub 2}O{sub 3} films by adhesion strength. - Abstract: Al{sub 2}O{sub 3} films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 Degree-Sign C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al{sub 2}O{sub 3} films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al{sub 2}O{sub 3} films deposited at a substrate temperature as low as 100 Degree-Sign C suppress oxidative attack on pure copper. The Al{sub 2}O{sub 3} films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al{sub 2}O{sub 3} film is a very promising candidate to be a protective coating for pure copper.

  3. Functionalization of super-aligned carbon nanotube film using hydrogen peroxide solution and its application in copper electrodeposition.

    Science.gov (United States)

    Xiong, Lunqiao; Shuai, Jing; Hou, Zecheng; Zhu, Lin; Li, Wenzhen

    2017-07-15

    In order to make super-aligned carbon nanotubes (SACNT) homogeneously spread in electrolytes, a swift and effective method was devised for surface functionalization of SACNT film by ohmic heating using hydrogen peroxide solution. Controllable generation of defects and notable graft of oxygen functional groups on the sidewall of SACNTs were induced as proven by X-ray photoelectron spectroscopy and Raman spectroscopy. Differently from the harsh wet chemical oxidation, the super-aligned morphology and structural integrity of carbon nanotubes in the SACNT film were found to be well preserved by electron microscopy analysis. The functionalized treatment can remove extraneous material contaminating SACNT film and improve its conductivity. The grafting of polar ionizable groups has been proved to effectively eliminate the agglomeration of SACNTs. When the oxidized SACNT film was used as host material for electrodeposition of copper, the composite film of well-bonded SACNTs and Cu was successfully prepared. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Low-cost optical fabrication of flexible copper electrode via laser-induced reductive sintering and adhesive transfer

    Science.gov (United States)

    Back, Seunghyun; Kang, Bongchul

    2018-02-01

    Fabricating copper electrodes on heat-sensitive polymer films in air is highly challenging owing to the need of expensive copper nanoparticles, rapid oxidation of precursor during sintering, and limitation of sintering temperature to prevent the thermal damage of the polymer film. A laser-induced hybrid process of reductive sintering and adhesive transfer is demonstrated to cost-effectively fabricate copper electrode on a polyethylene film with a thermal resistance below 100 °C. A laser-induced reductive sintering process directly fabricates a high-conductive copper electrode onto a glass donor from copper oxide nanoparticle solution via photo-thermochemical reduction and agglomeration of copper oxide nanoparticles. The sintered copper patterns were transferred in parallel to a heat-sensitive polyethylene film through self-selective surface adhesion of the film, which was generated by the selective laser absorption of the copper pattern. The method reported here could become one of the most important manufacturing technologies for fabricating low-cost wearable and disposable electronics.

  5. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  6. Preparation of Copper Iodide (CuI) Thin Film by In-Situ Spraying and Its Properties

    International Nuclear Information System (INIS)

    Rahmi, G H; Pratiwi, P; Aimon, A H; Winata, T; Iskandar, F; Nuryadi, B W

    2016-01-01

    Perovskite based solar cells have attracted interest as low-cost and high-efficiency solar cells due to their great performance, with efficiency up to 20.1%. One type of hole transport material (HTM) used in perovskite based solar cells is copper iodide (CuI) thin film. CuI is inexpensive and has high mobility compared to other HTMs commonly used in perovskite based solar cells. However, diisopropylsulfide solvent, which is used to dissolve CuI in the preparation process, is a malodorous and toxic compound. Therefore, the objective of this research was to develop a synthesis method for CuI thin film with in-situ spraying, a low- cost, safe and easy fabrication method. As precursor solution, CuSO 45 H 2 O was dissolved in ammonia and KI aqueous solution. The precursor solution was then sprayed directly onto a glass substrate with appropriate temperature to form CuI film. The prepared thin films were characterized by X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscope and four-point probes to study their properties. (paper)

  7. Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    A. Hemati

    2012-01-01

    Full Text Available Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS. Raising the pH of the nanoparticle dispersion reduced the zeta-potential from +61 mV at pH 7 to −51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS produced a stable dispersion in water with −56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS, CIGS nanoparticles and PSS (CIGS/PSS, and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2 short circuit current density.

  8. Effect of hydroxyl bond formation on the adhesion improvement of a polyethylene copper thin film system

    International Nuclear Information System (INIS)

    Camacho, M.; Blantocas, G.; Ramos, H.

    2009-01-01

    Formation of hydroxyl bonds on the surface of a gas plasma treated high density polyethylene (HDPE) sheets significantly enhanced the adhesion strength of the polyethylene copper thin film system. Surface treatments using oxygen gas plasmas at varying plasma parameters are applied in this study to identify the most effective plasma parameters that would promote the best adhesion strength. Analysis of gas plasma adulterated HDPE sheets showed best enhancement of polyethylene copper adhesion after an oxygen gas plasma treatment for 60 minutes at 5mA discharge current. Scanning Electron Microscopy Analysis, Fourier Transform Infrared Spectroscopy and Adhesion measurements using Pull out Force Analysis were used to measure the changes in the surface chemistry and surface topology of the HDPE sheets. (author)

  9. The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhinong, E-mail: znyu@bit.edu.cn [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Ren, Ruihuang [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Xue, Jianshe; Yao, Qi; Li, Zhengliang; Hui, Guanbao [Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176 (China); Xue, Wei [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China)

    2015-02-15

    Highlights: • The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film. • The introduction of oxygen into the deposition of CuCa film is necessary to improve the adhesion of Cu film. • The CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate. - Abstract: The properties of copper (Cu) metallization based on copper–calcium (CuCa) diffusion barrier as a function of oxygen flux in the CuCa film deposition were investigated in view of adhesion, diffusion and electronic properties. The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film, however, and increases the resistance of Cu film. The introduction of oxygen into the deposition of CuCa film induces the improvement of adhesion and crystallinity of Cu film, but produces a slight increase of resistance. The increased resistance results from the partial oxidation of Cu film. The annealing process in vacuum further improves the adhesion, crystallinity and conductivity of Cu film. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) show that the CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate due to the formation of Ca oxide in the interface of CuCa/substrate.

  10. Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

    Energy Technology Data Exchange (ETDEWEB)

    Birringer, Ryan P.; Dauskardt, Reinhold H. [Department of Materials Science and Engineering, Stanford University, Durand Building, Stanford, California 94305-4034 (United States); Shaviv, Roey [Novellus Systems Inc., 4000 North First Street, San Jose, California 95134 (United States); Geiss, Roy H.; Read, David T. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2011-08-15

    The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

  11. Effects of copper concentration on electro-optical and structural properties of chemically deposited nanosized (Zn-Cd)S:Cu films

    International Nuclear Information System (INIS)

    Khare, Ayush

    2010-01-01

    Nanocrystalline (Zn-Cd)S films have been co-deposited on glass slide substrates by chemical bath deposition (CBD) technique at 70 deg. C for 75 min. Electroluminescent (EL), photoluminescent (PL) and structural characteristics of these films doped with Cu have been investigated. Cu doping has significant effects on the growth, structural and optical properties of the deposited (Zn-Cd)S films. EL studies show the essentiality of copper for EL emission. The effect of Cu concentration is examined on XRD, SEM, UV-vis spectroscopy, etc. The morphology of these films investigated with SEM and XRD is used to determine crystalline nature of the films. The optical absorption coefficient of the films has been found to increase with increase in Cu concentration. Voltage and frequency dependence shows the effectiveness of acceleration-collision mechanism. The trap-depth values are calculated from temperature dependence of EL brightness.

  12. Comparison of interaction mechanisms of copper phthalocyanine and nickel phthalocyanine thin films with chemical vapours

    Science.gov (United States)

    Ridhi, R.; Singh, Sukhdeep; Saini, G. S. S.; Tripathi, S. K.

    2018-04-01

    The present study deals with comparing interaction mechanisms of copper phthalocyanine and nickel phthalocyanine with versatile chemical vapours: reducing, stable aromatic and oxidizing vapours namely; diethylamine, benzene and bromine. The variation in electrical current of phthalocyanines with exposure of chemical vapours is used as the detection parameter for studying interaction behaviour. Nickel phthalocyanine is found to exhibit anomalous behaviour after exposure of reducing vapour diethylamine due to alteration in its spectroscopic transitions and magnetic states. The observed sensitivities of copper phthalocyanine and nickel phthalcyanine films are different in spite of their similar bond numbers, indicating significant role of central metal atom in interaction mechanism. The variations in electronic transition levels after vapours exposure, studied using UV-Visible spectroscopy confirmed our electrical sensing results. Bromine exposure leads to significant changes in vibrational bands of metal phthalocyanines as compared to other vapours.

  13. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    International Nuclear Information System (INIS)

    Labidi, A.; Bejaoui, A.; Ouali, H.; Akkari, F. Chaffar; Hajjaji, A.; Gaidi, M.; Kanzari, M.; Bessais, B.; Maaref, M.

    2011-01-01

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  14. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    Energy Technology Data Exchange (ETDEWEB)

    Labidi, A., E-mail: Ahmed_laabidi@yahoo.fr [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Bejaoui, A.; Ouali, H. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Akkari, F. Chaffar [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Hajjaji, A.; Gaidi, M. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Maaref, M. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia)

    2011-09-15

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  15. Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

    International Nuclear Information System (INIS)

    Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

    2004-01-01

    Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

  16. Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

    Science.gov (United States)

    Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

    2014-06-01

    Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control). © 2013 Elsevier B.V. All rights reserved.

  17. Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

    Science.gov (United States)

    Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

    2018-05-01

    Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

  18. Liquid-film assisted formation of alumina/niobium interfaces

    OpenAIRE

    Sugar, Joshua D.; McKeown, Joseph T.; Marks, Robert A.; Glaeser, Andreas M.

    2002-01-01

    Alumina has been joined at 1400 degrees C using niobium-based interlayers. Two different joining approaches were compared: solid-state diffusion bonding using a niobium foil as an interlayer, and liquid-film assisted bonding using a multilayer copper/niobium/copper interlayer. In both cases, a 127-(mu)m thick niobium foil was used; =1.4-(mu)m or =3-(mu)m thick copper films flanked the niobium. Room-temperature four-point bend tests showed that the introduction of a copper film had a significa...

  19. Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

    Science.gov (United States)

    Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

    2008-05-01

    Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

  20. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    International Nuclear Information System (INIS)

    Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

    2011-01-01

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  1. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Luo Xinze [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); College of Chemistry and Biological Science, Yili Normal University, Yining 835000, (China); Xu Lin, E-mail: linxu@nenu.edu.cn [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); Xu Bingbing; Li Fengyan [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China)

    2011-05-15

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO{sub 3}){sub 2}, TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 {mu}A cm{sup -2}, a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  2. Surface Modification of C17200 Copper-Beryllium Alloy by Plasma Nitriding of Cu-Ti Gradient Film

    Science.gov (United States)

    Zhu, Y. D.; Yan, M. F.; Zhang, Y. X.; Zhang, C. S.

    2018-03-01

    In the present work, a copper-titanium film of gradient composition was firstly fabricated by the dual magnetron sputtering through power control and plasma nitriding of the film was then conducted to modify C17200 Cu alloy. The results showed that the prepared gradient Cu-Ti film by magnetron sputtering was amorphous. After plasma nitriding at 650 °C, crystalline Cu-Ti intermetallics appeared in the multi-phase coating, including CuTi2, Cu3Ti, Cu3Ti2 and CuTi. Moreover, even though the plasma nitriding duration of the gradient Cu-Ti film was only 0.5 h, the mechanical properties of the modified Cu surface were obviously improved, with the surface hardness enhanced to be 417 HV0.01, the wear rate to be 0.32 × 10-14 m3/Nm and the friction coefficient to be 0.075 at the load of 10 N, which are all more excellent than the C17200 Cu alloy. In addition, the wear mechanism also changed from adhesion wear for C17200 Cu substrate to abrasive wear for the modified surface.

  3. Surface properties of copper based cermet materials

    International Nuclear Information System (INIS)

    Voinea, M.; Vladuta, C.; Bogatu, C.; Duta, A.

    2008-01-01

    The paper presents the characterization of the surface properties of copper based cermets obtained by two different techniques: spray pyrolysis deposition (SPD) and electrodeposition. Copper acetate was used as precursor of Cu/CuO x cermet. The surface morphology was tailored by adding copolymers of maleic anhydride with controlled hydrophobia. The films morphology of Cu/CuO x was assessed using contact angle measurements and AFM analysis. The porous structures obtained via SPD lead to higher liquid adsorption rate than the electrodeposited films. A highly polar liquid - water is recommended as testing liquid in contact angle measurements, for estimating the porosity of copper based cermets, while glycerol can be used to distinguish among ionic and metal predominant structures. Thus, contact angle measurements can be used for a primary evaluation of the films morphology and, on the other hand, of the ratio between the cermet components

  4. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  5. Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

    2016-01-01

    The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

  6. Anodic polarization behavior of pure copper in carbonate solutions

    International Nuclear Information System (INIS)

    Kawasaki, Manabu; Taniguchi, Naoki; Naitou, Morimasa

    2008-03-01

    Copper is one of the candidate materials for overpacks. The redox condition at the early stage of the post closure will be oxidizing. In order to understand the influence of environmental factors on the corrosion behavior of copper in such oxidizing environment, anodic polarization tests were performed in carbonate aqueous solution with varying the concentration of representative chemical species in groundwater. As the results of potentiodynamic and potentiostatic tests, anodic polarization behavior of pure copper was summarized as follows; Carbonate ion and bicarbonate ion promoted the passivation of pure copper, and suppressed the initiation of film breakdown. Chloride ion promoted both the active dissolution and initiation of film breakdown of pure copper. The influence of sulfate ion and pH was small, but the action of sulfate ion to the pure copper was similar to that of chloride ion, and the increase of pH was likely to promote the passivation and suppress the initiation of film breakdown. The film breakdown potential, Eb, was represented as a function of the ratio of aggressive ion and inhibiting ion such as [Cl - ]/[HCO 3 - ], [SO 4 2- ]/[HCO 3 - ]. When the ratio exceeds a certain value, the anodic polarization curve becomes active dissolution type so that no macroscopic film breakdown can not be occurred. The lower limit of Eb in passive type region was estimated to be about -200 mV vs. SCE. As the results of potentio static tests, the corrosion form near the Eb was uniform dissolution over the surface, but pitting corrosion and non-uniform corrosion occurred according to the condition of the test solution. Neither pitting corrosion nor non-uniform corrosion occurred at the potential below Eb in every test cases. (author)

  7. Hybrid Solar Cell with TiO2 Film: BBOT Polymer and Copper Phthalocyanine as Sensitizer

    Directory of Open Access Journals (Sweden)

    Saptadip Saha

    2016-01-01

    Full Text Available An organic-inorganic hybrid solar cell was fabricated using Titanium dioxide (TiO2: 2,5-bis(5-tert-butyl-2-benzoxazolyl thiophene (BBOT film and Copper Phthalocyanine (CuPc as a sensitizer. BBOT was used in photodetector in other reported research works, but as per best of our knowledge, it was not implemented in solar cells till date. The blend of TiO2: BBOT blend was used to fabricate the film on ITO-coated glass and further a thin layer of CuPc was coated on the film. This was acted as photoanode and another ITO coated glass with a platinum coating was used as a counter electrode (cathode. An optimal blend of acetonitrile (solvent (50-100%, 1,3-dimethylimidazolium iodide (10-25%, iodine (2.5-10% and lithium iodide, pyridine derivative and thiocyanate was used as electrolytes in the hybrid solar cell. The different structural, optical and electrical characteristics were measured. The Hybrid solar cell showed a maximum conversion efficiency of 6.51%.

  8. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  9. Phase and Texture of Solution-Processed Copper Phthalocyanine Thin Films Investigated by Two-Dimensional Grazing Incidence X-Ray Diffraction

    Directory of Open Access Journals (Sweden)

    Lulu Deng

    2011-07-01

    Full Text Available The phase and texture of a newly developed solution-processed copper phthalocyanine (CuPc thin film have been investigated by two-dimensional grazing incidence X-ray diffraction. The results show that it has β phase crystalline structure, with crystallinity greater than 80%. The average size of the crystallites is found to be about 24 nm. There are two different arrangements of crystallites, with one dominating the diffraction pattern. Both of them have preferred orientation along the thin film normal. Based on the similarities to the vacuum deposited CuPc thin films, the new solution processing method is verified to offer a good alternative to vacuum process, for the fabrication of low cost small molecule based organic photovoltaics.

  10. Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

    International Nuclear Information System (INIS)

    Gosavi, S.R.; Deshpande, N.G.; Gudage, Y.G.; Sharma, Ramphal

    2008-01-01

    Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I-V curve with good electrical conductivity

  11. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    Science.gov (United States)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  12. Passivation Effects in Copper Thin Films

    International Nuclear Information System (INIS)

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-01-01

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

  13. Orthorhombic intermediate phase originating from {110} nanotwinning in Ni.sub.50.0./sub.Mn.sub.28.7./sub.Ga.sub.21.3./sub. modulated martensite

    Czech Academy of Sciences Publication Activity Database

    Straka, Ladislav; Drahokoupil, Jan; Veřtát, Petr; Kopeček, Jaromír; Zelený, Martin; Seiner, Hanuš; Heczko, Oleg

    2017-01-01

    Roč. 132, Jun (2017), s. 335-344 ISSN 1359-6454 R&D Projects: GA ČR GA16-00043S Institutional support: RVO:68378271 ; RVO:61388998 Keywords : Ni 2 MnGa * magnetic shape memory * martensitic transformation * nanotwins * adaptive phase Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.301, year: 2016

  14. Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

    KAUST Repository

    Islam, Md. Anisul; Nurani, Sheikh Jaber; Karim, Md. Adnan; Rahman, Abu Sadat Md. Sayem; Abdul Halim, Md. Md. Ansar Ali

    2016-01-01

    concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher

  15. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Science.gov (United States)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-07-01

    The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O2sbnd CF4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of Csbnd O, Osbnd Cdbnd O, Cdbnd O and sbnd NO2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  16. Synchronous determination of mercury (II) and copper (II) based on quantum dots-multilayer film

    International Nuclear Information System (INIS)

    Ma Qiang; Ha Enna; Yang Fengping; Su Xingguang

    2011-01-01

    Graphical abstract: We developed a sensitive sensor for synchronous detection of Hg (II) and Cu (II) based on the quenchedand recovered PL intensity of QDs-multilayer films. Solutions containing Hg (II) or Cu (II) were used to quench the fluorescence of the QDs-multilayer films firstly. Then, glutathione (GSH) was used to remove Hg (II) or Cu (II) from the QDs-multilayer films due to stronger affinity of GSH-metal ions than that of QDs metal ions. Thus, the fluorescence of QDs-multilayer films was recovered. Highlights: → QDs-multilayer films were developed for synchronous detection of Hg (II) and Cu (II). → Hg (II) and Cu (II) could quench the photoluminescence of the QDs-multilayer films. → Glutathione was used to remove metal ions and recovery photoluminescence of QDs-multilayer films. - Abstract: A sensitive sensor for mercury (II) and copper (II) synchronous detection was established via the changed photoluminescence of CdTe quantum dots (QDs) multilayer films in this work. QDs were deposited on the quartz slides to form QDs-multilayer films by electrostatic interactions with poly(dimethyldiallyl ammonium chloride) (PDDA). Hg 2+ or Cu 2+ could quench the photoluminescence of the QDs-multilayer films, and glutathione (GSH) was used to remove Hg 2+ or Cu 2+ from QDs-multilayer films due to strong affinity of GSH-metal ions, which resulted in the recovered photoluminescence of QDs-multilayer films. There are good linear relationships between the metal ions concentration and the photoluminescence intensity of QDs in the quenched and recovered process. It was found that the Stern-Volmer constants for Hg 2+ are higher than that for Cu 2+ . Based on different quenching and recovery constant between Hg 2+ and Cu 2+ , the synchronous detection of Hg 2+ and Cu 2+ can be achieved. The linear ranges of this assay were obtained from 0.005 to 0.5 μM for Hg 2+ and from 0.01 to 1 μM for Cu 2+ , respectively. And the artificial water samples were determined by this

  17. Surface Functionalization of Thin-Film Composite Membranes with Copper Nanoparticles for Antimicrobial Surface Properties

    KAUST Repository

    Ben-Sasson, Moshe

    2014-01-07

    Biofouling is a major operational challenge in reverse osmosis (RO) desalination, motivating a search for improved biofouling control strategies. Copper, long known for its antibacterial activity and relatively low cost, is an attractive potential biocidal agent. In this paper, we present a method for loading copper nanoparticles (Cu-NPs) on the surface of a thin-film composite (TFC) polyamide RO membrane. Cu-NPs were synthesized using polyethyleneimine (PEI) as a capping agent, resulting in particles with an average radius of 34 nm and a copper content between 39 and 49 wt.%. The positive charge of the Cu-NPs imparted by the PEI allowed a simple electrostatic functionalization of the negatively charged RO membrane. We confirmed functionalization and irreversible binding of the Cu-NPs to the membrane surface with SEM and XPS after exposing the membrane to bath sonication. We also demonstrated that Cu-NP functionalization can be repeated after the Cu-NPs dissolve from the membrane surface. The Cu-NP functionalization had minimal impact on the intrinsic membrane transport parameters. Surface hydrophilicity and surface roughness were also maintained, and the membrane surface charge became positive after functionalization. The functionalized membrane exhibited significant antibacterial activity, leading to an 80-95% reduction in the number of attached live bacteria for three different model bacterial strains. Challenges associated with this functionalization method and its implementation in RO desalination are discussed. © 2013 American Chemical Society.

  18. Surface Functionalization of Thin-Film Composite Membranes with Copper Nanoparticles for Antimicrobial Surface Properties

    KAUST Repository

    Ben-Sasson, Moshe; Zodrow, Katherine R.; Genggeng, Qi; Kang, Yan; Giannelis, Emmanuel P.; Elimelech, Menachem

    2014-01-01

    Biofouling is a major operational challenge in reverse osmosis (RO) desalination, motivating a search for improved biofouling control strategies. Copper, long known for its antibacterial activity and relatively low cost, is an attractive potential biocidal agent. In this paper, we present a method for loading copper nanoparticles (Cu-NPs) on the surface of a thin-film composite (TFC) polyamide RO membrane. Cu-NPs were synthesized using polyethyleneimine (PEI) as a capping agent, resulting in particles with an average radius of 34 nm and a copper content between 39 and 49 wt.%. The positive charge of the Cu-NPs imparted by the PEI allowed a simple electrostatic functionalization of the negatively charged RO membrane. We confirmed functionalization and irreversible binding of the Cu-NPs to the membrane surface with SEM and XPS after exposing the membrane to bath sonication. We also demonstrated that Cu-NP functionalization can be repeated after the Cu-NPs dissolve from the membrane surface. The Cu-NP functionalization had minimal impact on the intrinsic membrane transport parameters. Surface hydrophilicity and surface roughness were also maintained, and the membrane surface charge became positive after functionalization. The functionalized membrane exhibited significant antibacterial activity, leading to an 80-95% reduction in the number of attached live bacteria for three different model bacterial strains. Challenges associated with this functionalization method and its implementation in RO desalination are discussed. © 2013 American Chemical Society.

  19. Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

    Science.gov (United States)

    Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

    2018-02-01

    Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

  20. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  1. Effect of Sulfide Concentration on Copper Corrosion in Anoxic Chloride-Containing Solutions

    Science.gov (United States)

    Kong, Decheng; Dong, Chaofang; Xu, Aoni; Man, Cheng; He, Chang; Li, Xiaogang

    2017-04-01

    The structure and property of passive film on copper are strongly dependent on the sulfide concentration; based on this, a series of electrochemical methods were applied to investigate the effect of sulfide concentration on copper corrosion in anaerobic chloride-containing solutions. The cyclic voltammetry and x-ray photoelectron spectroscopy analysis demonstrated that the corrosion products formed on copper in anaerobic sulfide solutions comprise Cu2S and CuS. And the corrosion resistance of copper decreased with increasing sulfide concentration and faster sulfide addition, owing to the various structures of the passive films observed by the atomic force microscope and scanning electron microscope. A p-type semiconductor character was obtained under all experimental conditions, and the defect concentration, which had a magnitude of 1022-1023 cm-3, increased with increasing sulfide concentration, resulting in a higher rate of both film growth and dissolution.

  2. Characterization of submonolayer film composed of soft-landed copper nanoclusters on HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Shyamal, E-mail: shyamal.mondal@saha.ac.in; Das, Pabitra; Chowdhury, Debasree; Bhattacharyya, S. R. [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700 064 (India)

    2015-06-24

    Preformed Copper nanoclusters are deposited on highly oriented pyrolytic graphite (HOPG) at very low energy. For the study of chemical composition X-ray Photoelectron Spectroscopy (XPS) is performed for a wide range of binding energy without exposing the sample in the ambient. Morphological aspects of the supported clusters are characterized employing high resolution scanning electron microscope (SEM). Different types of morphology are observed depending on the nature of the substrate surface. Big fractal islands are formed on terraces while at the step edges small islands are found to form. Ex-situ cathodoluminescence (CL) measurement shows peak at 558 nm wavelength which corresponds to the band gap of 2.22 eV which is due to Cu{sub 2}O nanocrystals formed due to oxidation of the deposited film in ambient.

  3. An Electrochemical Investigation into the Corrosion Protection Properties of Coatings for the Active Metal Copper

    OpenAIRE

    Carragher, Ursula

    2013-01-01

    In the research presented in this thesis, corrosion protection films were synthesised and characterised. The films were based on polypyrrole (PPy) coatings doped with combinations of tartrate, oxalate and dodecylbenzene sulfonate (DBS) along with the incorporation of multiwalled carbon nanotubes (MWCNT), and viologen films adsorbed at copper. The corrosion protective properties of these films were studied and compared to the uncoated copper substrate. They were assessed and stu...

  4. Improvement of the adhesion strength between copper plated layer and resin substrate using a chemically adsorbed monolayer

    Directory of Open Access Journals (Sweden)

    Tsuchiya K.

    2013-08-01

    Full Text Available With reducing the size and weight of electric devices, high-tensile, light and fine copper wire is demanded. So the production technique of a copper wire plated on a super fiber resin (Vectran film was researched for improving the adhesion strength between the copper and the resin. In this study, we used the Cu2+ or Pd2+ complex prepared with a chemically adsorbed monolayer (CAM to improve the adhesion strength between the copper plated layer and the Vectran film. As the result of scotch tape test, it was observed that the adhesion strength between the copper plated layer and Vectran film was improved by the Cu2+ or Pd2+ complex CAM.

  5. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  6. A contribution to the study of thin films grown on copper; Contribution a l'etude des films minces d'oxydes formes sur le cuivre

    Energy Technology Data Exchange (ETDEWEB)

    Frisby, H [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-11-15

    The study of cuprous oxide is mainly centered on very thin films, on their structural relationship with the underlying metal, on the importance of the surface state of the latter and on the influence of small quantities of cupric oxide. The thickness of the films has been measured by anodic reduction, the crystal structure and the surface state have bee n analysed by electron diffraction . The electron diffraction apparatus, of an ancient design, is adjusted for electron beams with 0,0705 Angstrom wave-length. The samples are observed under grazing incidence, the roughness of the surface having a very important effect on the form of the diffraction spots. For instance, round projections elongate the spots on a normal to the surface. The copper surfaces, cut out from single crystal blocks are electropolished in phosphoric acid. Then, the metal displays the copper diffraction diagram but with elongated spats. The surface can be considered flat in an area of a few cells. The electrolytic reduction by Allen's method shows, nevertheless; that such surfaces are already covered with a few layers of oxide molecules. If they are ridden of a protective film developed during the polishing, they are quickly covered in water by an oxide layer that grows in a short time to a thickness of 100 Angstrom. It is made of cuprous oxide in crystals of 25 to 30 Angstrom oriented with good accuracy in relation to a crystal axis of the copper generally, a two-fold axis {lambda}{sub 2}. On etched surfaces, the oxide takes approximately the orientation of the metal crystals. By modifying the experimental conditions, it is possible to obtain cupric oxide or cuprous oxide from anodic oxidation in alkaline baths, or by using oxygen peroxide. The disorientation effect produced by small amounts of CuO among the Cu{sub 2}O lattices can thus be studied. Finally, the orienting effect of the cuprous oxide on the copper was investigated by condensing in vacuo the metal on the oxide. It was observed

  7. Surfactant-assisted synthesis of Ag nanostructures and their self-assembled films on copper and aluminum substrate

    International Nuclear Information System (INIS)

    Zhuo Yujiang; Sun Wendong; Dong Lihong; Chu Ying

    2011-01-01

    In this paper, silver nanostructures with controlled morphologies, such as plates, rods, belts, sheets and their self-assembled films have been prepared on copper and aluminum substrates by a surfactant-assisted colloidal chemical method. The X-ray powder diffraction (XRD) and the selected area electron diffraction (SAED) patterns indicated that the Ag nanostructures grew on the substrates with cubic symmetry and single-crystalline in nature. An oriented attachment with surfactant-assisted mechanism and a cooperative effect of surfactant and chloride ion on the morphology of Ag nanostructures were investigated systematically and synthetically.

  8. Graphene-protected copper and silver plasmonics

    DEFF Research Database (Denmark)

    Kravets, V. G.; Jalil, R.; Kim, Y. J.

    2014-01-01

    suitable for plasmonic applications. To this end, there has been a continuous search for alternative plasmonic materials that are also compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered...... with one to a few graphene layers show excellent plasmonic characteristics. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic...

  9. Stress corrosion cracking of copper canisters

    Energy Technology Data Exchange (ETDEWEB)

    King, Fraser (Integrity Corrosion Consulting Limited (Canada)); Newman, Roger (Univ. of Toronto (Canada))

    2010-12-15

    A critical review is presented of the possibility of stress corrosion cracking (SCC) of copper canisters in a deep geological repository in the Fennoscandian Shield. Each of the four main mechanisms proposed for the SCC of pure copper are reviewed and the required conditions for cracking compared with the expected environmental and mechanical loading conditions within the repository. Other possible mechanisms are also considered, as are recent studies specifically directed towards the SCC of copper canisters. The aim of the review is to determine if and when during the evolution of the repository environment copper canisters might be susceptible to SCC. Mechanisms that require a degree of oxidation or dissolution are only possible whilst oxidant is present in the repository and then only if other environmental and mechanical loading conditions are satisfied. These constraints are found to limit the period during which the canisters could be susceptible to cracking via film rupture (slip dissolution) or tarnish rupture mechanisms to the first few years after deposition of the canisters, at which time there will be insufficient SCC agent (ammonia, acetate, or nitrite) to support cracking. During the anaerobic phase, the supply of sulphide ions to the free surface will be transport limited by diffusion through the highly compacted bentonite. Therefore, no HS. will enter the crack and cracking by either of these mechanisms during the long term anaerobic phase is not feasible. Cracking via the film-induced cleavage mechanism requires a surface film of specific properties, most often associated with a nano porous structure. Slow rates of dissolution characteristic of processes in the repository will tend to coarsen any nano porous layer. Under some circumstances, a cuprous oxide film could support film-induced cleavage, but there is no evidence that this mechanism would operate in the presence of sulphide during the long-term anaerobic period because copper sulphide

  10. Stress corrosion cracking of copper canisters

    International Nuclear Information System (INIS)

    King, Fraser; Newman, Roger

    2010-12-01

    A critical review is presented of the possibility of stress corrosion cracking (SCC) of copper canisters in a deep geological repository in the Fennoscandian Shield. Each of the four main mechanisms proposed for the SCC of pure copper are reviewed and the required conditions for cracking compared with the expected environmental and mechanical loading conditions within the repository. Other possible mechanisms are also considered, as are recent studies specifically directed towards the SCC of copper canisters. The aim of the review is to determine if and when during the evolution of the repository environment copper canisters might be susceptible to SCC. Mechanisms that require a degree of oxidation or dissolution are only possible whilst oxidant is present in the repository and then only if other environmental and mechanical loading conditions are satisfied. These constraints are found to limit the period during which the canisters could be susceptible to cracking via film rupture (slip dissolution) or tarnish rupture mechanisms to the first few years after deposition of the canisters, at which time there will be insufficient SCC agent (ammonia, acetate, or nitrite) to support cracking. During the anaerobic phase, the supply of sulphide ions to the free surface will be transport limited by diffusion through the highly compacted bentonite. Therefore, no HS. will enter the crack and cracking by either of these mechanisms during the long term anaerobic phase is not feasible. Cracking via the film-induced cleavage mechanism requires a surface film of specific properties, most often associated with a nano porous structure. Slow rates of dissolution characteristic of processes in the repository will tend to coarsen any nano porous layer. Under some circumstances, a cuprous oxide film could support film-induced cleavage, but there is no evidence that this mechanism would operate in the presence of sulphide during the long-term anaerobic period because copper sulphide

  11. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  12. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  13. Dynamics of the evaporative dewetting of a volatile liquid film confined within a circular ring.

    Science.gov (United States)

    Sun, Wei; Yang, Fuqian

    2015-04-07

    The dewetting dynamics of a toluene film confined within a copper ring on a deformable PMMA film is studied. The toluene film experiences evaporation and dewetting, which leads to the formation of a circular contact line around the center of the copper ring. The contact line recedes smoothly toward the copper ring at a constant velocity until reaching a dynamic "stick" state to form the first circular polymer ridge. The average receding velocity is found to be dependent on the dimensions of the copper ring (the copper ring diameter and the cross-sectional diameter of the copper wire) and the thickness of the PMMA films. A model is presented to qualitatively explain the evaporative dewetting phenomenon.

  14. Rocking disc electro-deposition of copper films on Mo/MoSe{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cummings, Charles Y.; Frith, Paul E. [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Zoppi, Guillaume; Forbes, Ian [Northumbria Photovoltaics Applications Centre, Northumbria University, NE1 8ST (United Kingdom); Rogers, Keith D. [Cranfield Health, Cranfield University, Shrivenham Campus, Swindon, SN6 8LA (United Kingdom); Lane, David W. [Department of Applied Science, Security and Resilience, Cranfield University, Shrivenham, Swindon, SN6 8LA (United Kingdom); Marken, Frank, E-mail: F.Marken@bath.ac.uk [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

    2011-08-31

    A novel electro-deposition method based on a rocking disc system with {pi}/3 amplitude and variable frequency is introduced. Uniform copper films were deposited from a 0.1 M CuSO{sub 4}/3.0 M NaOH/0.2 M sorbitol bath directly onto 12.1 cm{sup 2} Mo/MoSe{sub 2} substrates with X-ray diffraction showing a thickness variation of {+-}5% over this area. Investigation of the mass transport conditions suggests (i) uniform diffusion over the sample, (ii) a rate of mass transport proportional to the square root of the rocking rate, and (iii) turbulent conditions, which are able to dislodge gas bubbles during electro-deposition.

  15. Application of HTSC-thin films in microwave bandpass filters

    International Nuclear Information System (INIS)

    Jha, A.R.

    1993-01-01

    This paper reveals unique performance capabilities of High-Temperature Superconducting Thin-Film (HTSCTFs) for possible applications in microwave bandpass filters (BPFs). Microwave filters fabricated with HTSCTFs have demonstrated lowest insertion loss, highest rejection, and sharpest skirt selectivity. Thin films of Yttrium Barium Copper Oxide (YBCO), Bismuth Strontium Calcium Copper Oxide (BSCCO) and Thallium Calcium Barium Copper Oxide (TCBCO) will be most attractive for filters

  16. Engineering Graphene Films from Coal

    Science.gov (United States)

    Vijapur, Santosh H.

    Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

  17. Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

  18. Indirect potentiometric titration of ascorbic acid in pharmaceutical preparations using copper based mercury film electrode.

    Science.gov (United States)

    Abdul Kamal Nazer, Meeran Mohideen; Hameed, Abdul Rahman Shahul; Riyazuddin, Patel

    2004-01-01

    A simple and rapid potentiometric method for the estimation of ascorbic acid in pharmaceutical dosage forms has been developed. The method is based on treating ascorbic acid with iodine and titration of the iodide produced equivalent to ascorbic acid with silver nitrate using Copper Based Mercury Film Electrode (CBMFE) as an indicator electrode. Interference study was carried to check possible interference of usual excipients and other vitamins. The precision and accuracy of the method was assessed by the application of lack-of-fit test and other statistical methods. The results of the proposed method and British Pharmacopoeia method were compared using F and t-statistical tests of significance.

  19. STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

    Directory of Open Access Journals (Sweden)

    Anmar H. Shukur

    2018-01-01

    Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

  20. Corrosion of copper-based materials in gamma radiation

    International Nuclear Information System (INIS)

    Yunker, W.H.

    1986-06-01

    The corrosion behaviors of pure copper (CDA 101), 7% aluminum-copper bronze (CDA 613) and 30% nickel-copper (CDA 715) are being studied in a gamma radiation field of 1 x 10 5 R/h. These studies are in support of the Nevada Nuclear Waste Storage Investigations (NNWSI) Project, by Lawrence Livermore National Laboratory (LLNL), of copper-based materials for possible use in container systems for the permanent geologic burial of nuclear waste. Weight loss, tear drop (stressed), and crevice specimens of the three materials were exposed to water vapor-air atmospheres at 95 0 C and 150 0 C and to liquid water at 95 0 C for periods of one, three, and six months. Longer exposures are in progress. Measurements include: changes in the chemical composition of the gas and water, specimen weight changes, oxide film weights, evidence of microcracking and crevice corrosion, and chemical composition of the oxide films by Auger electron spectroscopy and x-ray diffraction. Interim results show considerable pit and under-film corrosion of alloys CDA 613 and CDA 715. Uniform corrosion rates range from 0.012 mil/yr (0.30 μm/yr) to 0.22 mil/yr (5.6 μm/yr), based on specimen weight losses during six- and seven-month exposures. The time dependencies will be determined as more data become available

  1. Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors Using Para-hexaphenyl as the Inducing Layer

    International Nuclear Information System (INIS)

    Ma Feng; Wang Shi-Rong; Li Xiang-Gao; Yan Dong-Hang

    2011-01-01

    We demonstrate n-type organic thin film transistors (OTFTs) employing copper hexadecafluorophthalocyanine (CuPcF 16 ) as the active layer and para-hexaphenyl (p-6p) as the inducing layer. Compared with the CuPcF 16 -based OTFTs without the p-6p inducing layer, the performance of the CuPcF 16 /p-6p OTFTs is greatly improved. The charge carrier field-effect mobility μ, on-off current ratio I on /I off and threshold voltage V T of the CuPcF 16 /p-6p OTFTs are 0.07 cm 2 /V·s, 1.61 × 10 5 and 6.28 V, respectively, approaching the level of a single crystal device. The improved performance is attributed to the introduction of p-6p to form a highly oriented and continuous film of CuPcF 16 with the molecular π-π stack direction parallel to the substrate. (cross-disciplinary physics and related areas of science and technology)

  2. Increase of the electrical resistance of thin copper film due to 14 MeV neutron irradiation

    International Nuclear Information System (INIS)

    Agrawal, S.K.; Kumar, U.; Nigam, A.K.; Singh, S.P.

    1981-01-01

    The variation in the electrical resistance of thin copper film (500 A 0 thick), grown on the glass slide has been measured with increasing 14 MeV neutron irradiation time. The electrical resistance vs irradiation time curve shows an interesting behaviour after an irradiation of 40 minutes. However, there is a net increase in the electrical resistance with increasing neutron dose. The maximum increase in the observed electrical resistance after an irradiation of 115 mins, is 4.45%. The microstructural studies of irradiated film were made using TEM and TED techniques. The TEM patterns up to an irradiation time of 1.00 hr do not show any appreciable change in the microstructure. The TED patterns also do not show any appreciable change in the diffraction pattern up to an irradiation time of 1.0 hr. But after an irradiation time of 1.5 hrs, two extra rings appear in the TED pattern which disappear with increasing neutron irradiation time

  3. Deposition and properties of cobalt- and ruthenium-based ultra-thin films

    Science.gov (United States)

    Henderson, Lucas Benjamin

    Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the times-to-failure at accelerated temperature and field conditions implies that ruthenium-phosphorus performs acceptably as a diffusion barrier for temperatures above 165°C. The future problems associated with the copper capping layer are primarily due to the poor adhesion between copper and the current Si-based capping layers. Cobalt, which adheres well to copper, has been widely proposed to replace the Si-based materials, but its ability to prevent copper diffusion must be improved if it is to be successfully implemented in the interconnect. Using a dual-source chemistry of dicobaltoctacarbonyl and trimethylphosphine at temperatures from 250-350°C, amorphous cobalt-phosphorus can be deposited by chemical vapor deposition. The films contain elemental cobalt and phosphorus, plus some carbon impurity, which is incorporated in the film as both graphitic and carbidic (bonded to cobalt) carbon. When deposited on copper, the adhesion between the two materials remains strong despite the presence of phosphorus and carbon at the interface, but the selectivity for growth on copper compared to silicon dioxide is poor and must be improved prior to consideration for application in interconnect systems. A single molecule precursor containing both cobalt and phosphorus atoms, tetrakis

  4. Auger electron and X-ray photoelectron spectroscopic study of the biocorrosion of copper by alginic acid polysaccharide

    Science.gov (United States)

    Jolley, John G.; Geesey, Gill G.; Hankins, Michael R.; Wright, Randy B.; Wichlacz, Paul L.

    1989-08-01

    Thin films (3.4 nm) of copper on germanium substrates were exposed to 2% alginic acid polysaccharide aqueous solution. Pre- and post-exposure characterization were done by Auger electron spectroscopy and X-ray photoelectron spectroscopy. Ancillary graphite furnace atomic absorption spectroscopy was used to monitor the removal process of the copper thin film from the germanium substrate. Results indicate that some of the copper was oxidized by the alginic acid solution. Some of the copper was removed from the Cu/Ge interface and incorporated into the polymer matrix. Thus, biocorrosion of copper was exhibited by the alginic acid polysaccharide.

  5. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    OpenAIRE

    Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

  6. Enhanced tribology durability of a self-assembled monolayer of alkylphosphonic acid on a textured copper substrate

    International Nuclear Information System (INIS)

    Wan Yong; Wang Yinhu; Zhang Quan; Wang Zhongqian; Xu Zhen; Liu Changsong; Zhang Junyan

    2012-01-01

    Highlights: ► A textured surface is prepared on the copper substrate by chemical etching. ► The alkylphosphonic acid is assembled on the etched copper substrate. ► Combining texturing and alkylphosphonic acid coating render the films hydrophobicity. ► The dual-layer films possess low friction with extremely long duration. - Abstract: A simple two-step process was developed to render the copper surface with lower friction and long durability. The copper substrate was immersed in a 0.01 M NaOH solution to fabricate a textured Cu 2 O film. A self-assembled monolayer of alkylphosphonic acid was then deposited on the Cu 2 O film to acquire high hydrophobicity. Scanning electron microscopy, Fourier transform infrared microscopy and water contact angle measurements were used to analyze the morphological features, the chemical composition and hydrophobicity of freshly prepared samples, respectively. Moreover, the friction-reducing behavior of the organic-inorganic composite film sliding against steel was evaluated in a ball-on-plate configuration. It was found that the alkylphosphonic acid films on the textured Cu 2 O film led to decreased friction with significantly extended life. For a constant load, the increase in chain length of alkylphosphonic acid yields the films that are dramatically more stable against tribological deformation and provide low coefficients of friction over much longer periods of time.

  7. The direct determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium, lead and copper

    International Nuclear Information System (INIS)

    Lee, A.F.

    1981-01-01

    This report describes the development and application of a voltammetric procedure for the direct, simultaneous determination of cadmium, lead, and copper in three SAROC reference materials (carbonatite, magnesite, and quartz). The electrolyte was a mixture of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. No interferences were encountered from Fe(III), As(III), Sb(V), Tl(I), or In(III) at the concentrations present in the samples. Intermetallic interferences were eliminated by the use of thin mercury-film electrodes not less than 80nm thick. Limits of detection were determined by the degree to which the supporting electrolyte could be purified, and were estimated to be 10ng/g, 250ng/g, and 150ng/g for cadmium, lead, and copper respectively

  8. Nanotwinned Ti(O,C) induced by oriented attachment in a hot-pressed Nb–Ti–Al alloy

    International Nuclear Information System (INIS)

    Shi, Zhiwu; Wei, Hua; Zhang, Hongyu; Jin, Tao; Sun, Xiaofeng; Zheng, Qi

    2016-01-01

    The microstructures and formation mechanisms of various kinds of Ti(O,C) twins in a Nb–23Ti–15Al alloy have been investigated. The crystallographic features of the twins are systematically characterized using transmission electron microscopy (TEM). Lamellar or corner Ti(O,C) twins consist of coherent {111} twin boundaries (TBs) and incoherent {112} TBs. The three-fold Ti(O,C) twins are newly found, with symmetric Σ9 {114} or asymmetric Σ9 {115}/{111} serving as the secondary TBs. Moreover, slabs on Ti(O,C) TBs showing three-layer periodic contrasts are identified to be the twin overlapping. According to the microstructure characteristics, we propose a new model based on oriented attachment to interpret the formation of Ti(O,C) twins, which involves the contact, rotation, attachment and Ostwald ripening of Ti(O,C) grains. Our results provide new insights on the formation mechanisms of nanotwinned grains.

  9. Electrical wire explosion process of copper/silver hybrid nano-particle ink and its sintering via flash white light to achieve high electrical conductivity.

    Science.gov (United States)

    Chung, Wan-Ho; Hwang, Yeon-Taek; Lee, Seung-Hyun; Kim, Hak-Sung

    2016-05-20

    In this work, combined silver/copper nanoparticles were fabricated by the electrical explosion of a metal wire. In this method, a high electrical current passes through the metal wire with a high voltage. Consequently, the metal wire evaporates and metal nanoparticles are formed. The diameters of the silver and copper nanoparticles were controlled by changing the voltage conditions. The fabricated silver and copper nano-inks were printed on a flexible polyimide (PI) substrate and sintered at room temperature via a flash light process, using a xenon lamp and varying the light energy. The microstructures of the sintered silver and copper films were observed using a scanning electron microscope (SEM) and a transmission electron microscope (TEM). To investigate the crystal phases of the flash-light-sintered silver and copper films, x-ray diffraction (XRD) was performed. The absorption wavelengths of the silver and copper nano-inks were measured using ultraviolet-visible spectroscopy (UV-vis). Furthermore, the resistivity of the sintered silver and copper films was measured using the four-point probe method and an alpha step. As a result, the fabricated Cu/Ag film shows a high electrical conductivity (4.06 μΩcm), which is comparable to the resistivity of bulk copper (1.68 μΩcm). In addition, the fabricated Cu/Ag nanoparticle film shows superior oxidation stability compared to the Cu nanoparticle film.

  10. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  11. Wafer-level hermetic vacuum packaging by bonding with a copper-tin thin film sealing ring

    Science.gov (United States)

    Akashi, Teruhisa; Funabashi, Hirofumi; Takagi, Hideki; Omura, Yoshiteru; Hata, Yoshiyuki

    2018-04-01

    A wafer-level hermetic vacuum packaging technology intended for use with MEMS devices was developed based on a copper-tin (CuSn) thin film sealing ring. To allow hermetic packaging, the shear strength of the CuSn thin film bond was improved by optimizing the pretreatment conditions. As a result, an average shear strength of 72.3 MPa was obtained and a cavity that had been hermetically sealed using wafer-level packaging (WLP) maintained its vacuum for 1.84 years. The total pressures in the cavities and the partial pressures of residual gases were directly determined with an ultra-low outgassing residual gas analyzer (RGA) system. Hermeticity was evaluated based on helium leak rates, which were calculated from helium pressures determined with the RGA system. The resulting data showed that a vacuum cavity following 1.84 years storage had a total pressure of 83.1 Pa, contained argon as the main residual gas and exhibited a helium leak rate as low as 1.67  ×  10-17 Pa · m3 s-1, corresponding to an air leak rate of 6.19  ×  10-18 Pa · m3 s-1. The RGA data demonstrate that WLP using a CuSn thin film sealing ring permits ultra-high hermeticity in conjunction with long-term vacuum packaging that is applicable to MEMS devices.

  12. Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

    Science.gov (United States)

    Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

    2017-03-01

    Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

  13. Effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1985-10-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defect. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These result suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistant with the Dutta-Dimon-Horn thermal activation model

  14. Copper and brass aged at open circuit potential in slightly alkaline solutions

    International Nuclear Information System (INIS)

    Procaccini, R.; Vazquez, M.; Cere, S.

    2009-01-01

    Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L -1 borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The films grown on brass tend to be thicker but less resistive and Zn compounds incorporate to the film. This is supported by results from reflectance and impedance spectroscopy. The kinetics of oxygen reduction is strongly inhibited on oxidized electrodes, particularly in the case of brass. The global number of exchanged electrons remains close to four and seems to be independent of the presence of surface oxides.

  15. Adsorption behavior of caffeine as a green corrosion inhibitor for copper

    International Nuclear Information System (INIS)

    Souza, Fernando Sílvio de; Giacomelli, Cristiano; Gonçalves, Reinaldo Simões; Spinelli, Almir

    2012-01-01

    Electrochemical and impedance experiments were carried out to evaluate the corrosion behavior of copper in aerated 0.1 mol L −1 H 2 SO 4 solutions in the presence of three xanthine derivatives with similar chemical structures. The corrosion rate of copper was found to increase in the presence of theophylline and theobromine and decrease in the presence of caffeine. The adsorption and inhibitory effect of caffeine on copper surfaces in aerated 0.1 mol L −1 H 2 SO 4 solutions were then investigated in detail by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), contact angle measurements, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and fluorescence experiments. The data obtained indicate that caffeine behaves as a cathodic-type inhibitor adsorbing onto the copper surface according to the Temkin isotherm, with the negative ∆G° ads value of − 31.1 kJ mol −1 signifying a spontaneous adsorption process. The corrosion inhibition efficiency increased with caffeine concentration in the range of 1.0–10.0 mmol L −1 . Furthermore, the EIS results obtained at the open-circuit potential and surface analysis (SEM, EDS and fluorescence) clearly demonstrated the adsorption of the organic compound onto the copper electrode. The contact angle measurements revealed the formation of a hydrophobic protective film. This film covers up to 72% of the total active surface, acts as a protective barrier and prevents interaction between the metal, water and oxygen molecules. - Highlights: ► We have investigated the adsorption and corrosion inhibition of caffeine on copper surfaces. ► Caffeine behaves as a cathodic-type inhibitor. ► Caffeine adsorbs onto copper surface according to Temkin isotherm. ► There exists the formation of a hydrophobic film that acts as a protective barrier. ► This corrosion inhibitor covers up to 72% of the total active surface of copper.

  16. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  17. Electrochemical Behavior of Pure Copper in Phosphate Buffer Solutions: A Comparison Between Micro- and Nano-Grained Copper

    Science.gov (United States)

    Imantalab, O.; Fattah-alhosseini, A.; Keshavarz, M. K.; Mazaheri, Y.

    2016-02-01

    In this work, electrochemical behavior of annealed (micro-) and nano-grained pure copper (fabricated by accumulative roll bonding process) in phosphate buffer solutions of various pH values ranging from 10.69 to 12.59 has been studied. Before any electrochemical measurements, evaluation of microstructure was obtained by optical microscope and transmission electron microscopy. To investigate the electrochemical behavior of the samples, the potentiodynamic polarization, Mott-Schottky analysis, and electrochemical impedance spectroscopy (EIS) were carried out. Potentiodynamic polarization plots and EIS measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure copper. Also, Mott-Schottky analysis indicated that the passive films behaved as p-type semiconductors and grain refinement did not change the semiconductor type of passive films.

  18. Graphene-based copper oxide thin film nanostructures as high-efficiency photocathode for p-type dye-sensitized solar cells

    Science.gov (United States)

    Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Cebeci, Hulya; Urk, Deniz

    2017-10-01

    Graphene-based p-type dye-sensitized solar cells (p-DSSCs) have been proposed and fabricated using copper oxide urchin-like nanostructures (COUN) as photocathode with an FeS2 counter electrode (CE). COUN composed of Cu2O core sphere and CuO shell nanorods with overall diameters of 2 to 4 μm were grown by a simple hydrothermal method with self-assemble nucleation. It was figured out that the formation of copper oxide core/shell structures could be adjusted by an ammonia additive leading to pH change of the precursor solution. In addition to a photocathode, we also demonstrated FeS2 thin films as an efficient CE material alternative to the conventional Pt CEs in DSSCs. FeS2 nanostructures, with diameters of 50 to 80 nm, were synthesized by a similar hydrothermal approach. FeS2 nanostructures are demonstrated to be an outstanding CE material in p-DSSCs. We report graphene/COUN as photocathode and Pt/FeS2 as CE in p-DSSCs, and results show that the synergetic combination of electrodes in each side (increased interconnectivity between COUN and graphene layer, high surface area, and high catalytic activity of FeS2) increased the power conversion efficiency from 1.56% to 3.14%. The excellent performances of COUN and FeS2 thin film in working and CEs, respectively, make them unique choices among the various photocathode and CE materials studied.

  19. Effects of combinative surface modification on the stability and conductivity of the copper particles

    International Nuclear Information System (INIS)

    Zeng, Yike; Li, Tongtong; Fu, Ming; Jiang, Shenglin; Zhang, Guangzu

    2014-01-01

    Highlights: • A combinative method is used to improve the performance of the copper powder. • The method integrates passivation, silver-coating, and coupling agent treatment. • The stability of the copper powder has been improved after the modification. • The sheet resistance of the conductive film is reduced to 15 mΩ. -- Abstract: The specific goal of the present study is to evaluate the surface performance of the copper particles and get excellent copper powder by surface modification. This paper proposes a combinative modification method integrating passivation, silver-coated, and coupling agent. As a result, after 600 h at room temperature the copper powder has the stabilization improved and is well combined with organic matters, and the sheet resistance of the film fabricated by the copper conductive filler is reduced to 15 mΩ. The performance of the copper powder has been greatly enhanced by the combinative modification, and the cost of the copper conductive filler is decreased significantly by this method. The results indicate that the combinative surface modification method can be used for practical electronic application

  20. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  1. Enhanced tribology durability of a self-assembled monolayer of alkylphosphonic acid on a textured copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wan Yong, E-mail: wanyong@qtech.edu.cn [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Wang Yinhu; Zhang Quan; Wang Zhongqian; Xu Zhen; Liu Changsong [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Zhang Junyan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer A textured surface is prepared on the copper substrate by chemical etching. Black-Right-Pointing-Pointer The alkylphosphonic acid is assembled on the etched copper substrate. Black-Right-Pointing-Pointer Combining texturing and alkylphosphonic acid coating render the films hydrophobicity. Black-Right-Pointing-Pointer The dual-layer films possess low friction with extremely long duration. - Abstract: A simple two-step process was developed to render the copper surface with lower friction and long durability. The copper substrate was immersed in a 0.01 M NaOH solution to fabricate a textured Cu{sub 2}O film. A self-assembled monolayer of alkylphosphonic acid was then deposited on the Cu{sub 2}O film to acquire high hydrophobicity. Scanning electron microscopy, Fourier transform infrared microscopy and water contact angle measurements were used to analyze the morphological features, the chemical composition and hydrophobicity of freshly prepared samples, respectively. Moreover, the friction-reducing behavior of the organic-inorganic composite film sliding against steel was evaluated in a ball-on-plate configuration. It was found that the alkylphosphonic acid films on the textured Cu{sub 2}O film led to decreased friction with significantly extended life. For a constant load, the increase in chain length of alkylphosphonic acid yields the films that are dramatically more stable against tribological deformation and provide low coefficients of friction over much longer periods of time.

  2. Effect of grain size on corrosion of nanocrystalline copper in NaOH solution

    International Nuclear Information System (INIS)

    Luo Wei; Xu Yimin; Wang Qiming; Shi Peizhen; Yan Mi

    2010-01-01

    Research highlights: → Coppers display an active-passive-transpassive behaviour with duplex passive film. → Grain size variation has little effect on the overall corrosion behaviour of Cu. → Little effect on corrosion may be due to duplex passivation in NaOH solution. → Bulk nanocrystalline Cu show bamboo-like flake corrosion structure. - Abstract: Effect of grain size on corrosion of bulk nanocrystalline copper was investigated using potentiodynamic polarization measurements in 0.1 M NaOH solution. Bulk nanocrystalline copper was prepared by inert gas condensation and in situ warm compress (IGCWC) method. The grain sizes of all bulk nanocrystalline samples were determined to be 48, 68 and 92 nm using X-ray diffraction (XRD). Results showed that bulk coppers displayed an active-passive-transpassive behaviour with duplex passive films. From polycrystalline to nanocrystalline, grain size variation showed little effect on the overall corrosion resistance of copper samples.

  3. Diffusion and adhesion properties of Cu films on polyimide substrates

    International Nuclear Information System (INIS)

    Liang, T.X.; Liu, Y.Q.; Fu, Z.Q.; Luo, T.Y.; Zhang, K.Y.

    2005-01-01

    Copper thin films were prepared on polyimide (PI) substrates by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Titanium nitride (TiN) diffusion barrier layers were deposited between the copper films and the PI substrates by PVD. Auger electron spectroscopy compositional depth profile showed that TiN barrier layer was very effective in preventing copper diffusion into PI substrate even after the Cu/TiN/PI samples were annealed at 300 deg. C for 5 h. For the as-deposited CVD-Cu/PI, CVD-Cu/TiN/PI, and as-deposited PVD-Cu/PI samples, the residual stress in Cu films was very small. Relatively larger residual stress existed in Cu films for PVD-Cu/TiN/PI samples. For PVD-Cu/TiN/PI samples, annealing can increase the peeling strength to the level observed without a diffusion barrier. The adhesion improvement of Cu films by annealing treatment can be attributed to lowering of the residual tensile stress in Cu films

  4. Galvanic corrosion of copper-cast iron couples

    International Nuclear Information System (INIS)

    Smart, N.R.; Rance, A.P.; Fennell, P.A.H.

    2005-01-01

    To ensure the safe encapsulation of spent nuclear fuel rods for geological disposal, SKB are considering using the Copper-Cast Iron Canister, which consists of an outer copper canister and an inner cast iron container. The canister will be placed into boreholes in the bedrock of a geologic repository and surrounded by bentonite clay. In the unlikely event of the outer copper canister being breached, water would enter the annulus between the inner and outer canister and at points of contact between the two metals there would be the possibility of galvanic interactions. Although this subject has been considered previously from both a theoretical standpoint and by experimental investigations there was a need for further experimental studies in support of information provided by SKB to the Swedish regulators (SKI). In the work reported here copper-cast iron galvanic couples were set up in a number of different environments representing possible conditions in the SKB repository. The tests investigated two artificial porewaters at 30 deg C and 50 deg C, under aerated and deaerated conditions. Tests were also carried out in a 30 wt% bentonite slurry made up in artificial groundwater. The potential of the couples and the currents passing between the coupled electrodes were monitored for several months. The effect of growing an oxide film on the surface of the cast iron prior to coupling it with copper was investigated. In addition, some crevice specimens based on the multi-crevice assembly (MCA) design were used to simulate the situation where the copper canister will be in direct contact with the cast iron inner vessel. The electrochemical results are presented graphically in the form of electrode potentials and galvanic corrosion currents as a function of time. The galvanic currents in aerated conditions were much higher than in deaerated conditions. For example, at 30 deg C, galvanic corrosion rates as low as 0.02 μm/year for iron were observed after deaeration, but

  5. Method of accurate thickness measurement of boron carbide coating on copper foil

    Science.gov (United States)

    Lacy, Jeffrey L.; Regmi, Murari

    2017-11-07

    A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

  6. Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

    International Nuclear Information System (INIS)

    Ee, Y.C.; Chen, Z.; Law, S.B.; Xu, S.; Yakovlev, N.L.; Lai, M.Y.

    2006-01-01

    Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti x Si y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 deg. C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers

  7. Deposition of Antimicrobial Copper-Rich Coatings on Polymers by Atmospheric Pressure Jet Plasmas

    Directory of Open Access Journals (Sweden)

    Jana Kredl

    2016-04-01

    Full Text Available Inanimate surfaces serve as a permanent reservoir for infectious microorganisms, which is a growing problem in areas in everyday life. Coating of surfaces with inorganic antimicrobials, such as copper, can contribute to reduce the adherence and growth of microorganisms. The use of a DC operated air plasma jet for the deposition of copper thin films on acrylonitrile butadiene styrene (ABS substrates is reported. ABS is a widespread material used in consumer applications, including hospitals. The influence of gas flow rate and input current on thin film characteristics and its bactericidal effect have been studied. Results from X-ray photoelectron spectroscopy (XPS and atomic force microscopy confirmed the presence of thin copper layers on plasma-exposed ABS and the formation of copper particles with a size in the range from 20 to 100 nm, respectively. The bactericidal properties of the copper-coated surfaces were tested against Staphylococcus aureus. A reduction in growth by 93% compared with the attachment of bacteria on untreated samples was observed for coverage of the surface with 7 at. % copper.

  8. SERS and DFT study of copper surfaces coated with corrosion inhibitor

    Directory of Open Access Journals (Sweden)

    Maurizio Muniz-Miranda

    2014-12-01

    Full Text Available Azole derivatives are common inhibitors of copper corrosion due to the chemical adsorption occurring on the metal surface that gives rise to a protective film. In particular, 1,2,4-triazole performs comparable to benzotriazole, which is much more widely used, but is by no means an environmentally friendly agent. In this study, we have analyzed the adsorption of 1,2,4-triazole on copper by taking advantage of the surface-enhanced Raman scattering (SERS effect, which highlights the vibrational features of organic ligand monolayers adhering to rough surfaces of some metals such as gold, silver and copper. To ensure the necessary SERS activation, a roughening procedure was implemented on the copper substrates, resulting in nanoscale surface structures, as evidenced by microscopic investigation. To obtain sufficient information on the molecule–metal interaction and the formation of an anticorrosive thin film, the SERS spectra were interpreted with the aid of theoretical calculations based on the density functional theory (DFT approach.

  9. The effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1986-01-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defects. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These results suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistent with the Dutta-Dimon-Horn thermal activation model. (Auth.)

  10. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  11. Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives

    International Nuclear Information System (INIS)

    Pasquale, M.A.; Gassa, L.M.; Arvia, A.J.

    2008-01-01

    Copper electrodeposition on copper from still plating solutions of different compositions was investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry, and scanning electron microscopy (SEM). An acid copper sulphate plating base solution was employed either with or without sodium chloride in the presence of a single additive, either polyethylene glycol (PEG) or 3-mercapto-2-propanesulphonic acid (MPSA), and their mixture. Thallium underpotential deposition/anodic stripping was employed to determine the adsorption capability of additives on copper. In the absence of chloride ions, MPSA shows a moderate adsorption on copper, whereas PEG is slightly adsorbed. At low cathodic overpotentials, the simultaneous presence of MPSA and chloride ions accelerates copper electrodeposition through the formation of an MPSA-chloride ion complex in the solution, particularly for about 220 μM sodium chloride. The reverse effect occurs in PEG-sodium chloride plating solutions. In this case, from EIS data the formation of a film that interferes with copper electrodeposition can be inferred. At higher cathodic overpotentials, when copper electrodeposition is under mass transport control, the cathode coverage by a PEG-copper chloride-mediated film becomes either partially or completely detached as the concentration of chloride ions at the negatively charged copper surface diminishes. The copper cathode grain topography at the μm scale depends on the cathodic overpotential, plating solution composition and average current density. Available data about the solution constituents and their adsorption on copper make it possible to propose a likely complex mechanism to understand copper electrodeposition from these media, including the accelerating effect of MPSA and the dynamics of PEG-copper chloride complex adsorbate interfering with the surface mobility of depositing copper ad-ions/ad-atoms

  12. Adsorption behavior of caffeine as a green corrosion inhibitor for copper

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Fernando Silvio de [Grupo de Estudos de Processos Eletroquimicos e Eletroanaliticos, Departamento de Quimica, Universidade Federal de Santa Catarina, 88040-900, Florianopolis, SC (Brazil); Giacomelli, Cristiano [Departamento de Quimica, Universidade Federal de Santa Maria, Av. Roraima 1000, 97119-900, Santa Maria, RS (Brazil); Goncalves, Reinaldo Simoes [Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves 9500, 91501-970, Porto Alegre, RS (Brazil); Spinelli, Almir, E-mail: almir.spinelli@ufsc.br [Grupo de Estudos de Processos Eletroquimicos e Eletroanaliticos, Departamento de Quimica, Universidade Federal de Santa Catarina, 88040-900, Florianopolis, SC (Brazil)

    2012-12-01

    Electrochemical and impedance experiments were carried out to evaluate the corrosion behavior of copper in aerated 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solutions in the presence of three xanthine derivatives with similar chemical structures. The corrosion rate of copper was found to increase in the presence of theophylline and theobromine and decrease in the presence of caffeine. The adsorption and inhibitory effect of caffeine on copper surfaces in aerated 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solutions were then investigated in detail by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), contact angle measurements, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and fluorescence experiments. The data obtained indicate that caffeine behaves as a cathodic-type inhibitor adsorbing onto the copper surface according to the Temkin isotherm, with the negative Increment G Degree-Sign {sub ads} value of - 31.1 kJ mol{sup -1} signifying a spontaneous adsorption process. The corrosion inhibition efficiency increased with caffeine concentration in the range of 1.0-10.0 mmol L{sup -1}. Furthermore, the EIS results obtained at the open-circuit potential and surface analysis (SEM, EDS and fluorescence) clearly demonstrated the adsorption of the organic compound onto the copper electrode. The contact angle measurements revealed the formation of a hydrophobic protective film. This film covers up to 72% of the total active surface, acts as a protective barrier and prevents interaction between the metal, water and oxygen molecules. - Highlights: Black-Right-Pointing-Pointer We have investigated the adsorption and corrosion inhibition of caffeine on copper surfaces. Black-Right-Pointing-Pointer Caffeine behaves as a cathodic-type inhibitor. Black-Right-Pointing-Pointer Caffeine adsorbs onto copper surface according to Temkin isotherm. Black-Right-Pointing-Pointer There exists the formation of a hydrophobic film that acts as a

  13. Adsorption of 2-mercaptobenzothiazole on copper surface from phosphate solutions

    International Nuclear Information System (INIS)

    Kazansky, L.P.; Selyaninov, I.A.; Kuznetsov, Yu.I.

    2012-01-01

    Analysis of the electrochemical and XPS results has shown that adsorption of 2-mercaptobenzothiazole (MBT) on copper electrodes in neutral phosphate solutions proceeds through the formation of the chemical bonds by copper (I) cations with exo-sulfur and nitrogen atoms. A protection layer formed of Cu(I)MBT complex prevents precipitation of copper (II) phosphate on a copper surface. The thickness of the surface film consisting of a complex [Cu(I)MBT] n (having probably polymeric nature), where MBT acts as at least three-dentate ligand, increases depending on the exposure time, reaching 8-9 nm after immersing for 12 h in test solution. Even in a case of the preliminary formation of copper (II) phosphate on the copper electrode at the anodic potential addition of small amounts of MBT results in complete removal of copper (II) phosphate from the surface.

  14. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  15. Two-step fabrication of nanoporous copper films with tunable morphology for SERS application

    Science.gov (United States)

    Diao, Fangyuan; Xiao, Xinxin; Luo, Bing; Sun, Hui; Ding, Fei; Ci, Lijie; Si, Pengchao

    2018-01-01

    It is important to design and fabricate nanoporous metals (NPMs) with optimized microstructures for specific applications. In this contribution, nanoporous coppers (NPCs) with controllable thicknesses and pore sizes were fabricated via the combination of a co-sputtering of Cu/Ti with a subsequent dealloying process. The effect of dealloying time on porous morphology and the corresponding surface enhanced Raman scattering (SERS) behaviors were systematically investigated. Transmission electron microscopy (TEM) identified the presences of the gaps formed between ligaments and also the nanobumps on the nanoparticle-aggregated ligament surface, which were likely to contribute as the ;hot spots; for electromagnetic enhancement. The optimal NPC film exhibited excellent SERS performance towards Rhodamine 6G (R6G) with a low limiting detection (10-9 M), along with good uniformity and reproducibility. The calculated enhancement factor of ca. 4.71 × 107 was over Au substrates and comparable to Ag systems, promising the proposed NPC as a cheap candidate for high-performance SERS substrate.

  16. Driving forces for texture transformation in thin Ag films

    International Nuclear Information System (INIS)

    Ellis, Elizabeth A.; Chmielus, Markus; Lin, Ming-Tzer; Joress, Howie; Visser, Kyle; Woll, Arthur; Vinci, Richard P.; Brown, Walter L.; Baker, Shefford P.

    2016-01-01

    The well-known thickness-dependent (111)-to-(100) texture transformation in thin FCC films is usually attributed to a competition between interface and strain energies. In this model, thin films retain their (111) texture due to the lower energy of the (111) interface, while thick films transform to (100) due to the lower stiffness and thus strain energy of a (100) film. However, recent work has called this model into question, suggesting that neither the stress nor the interface energy play a dominant role in texture transformation. We investigated the driving forces involved in this transformation by using a bulge test apparatus to induce different stresses in thin Ag films under identical annealing conditions. In situ synchrotron XRD measurements show the change in texture during annealing, and reveal that applied stresses have no effect on the transformation. Stress analysis shows that differences in driving forces for texture transformation due to applied bulge pressure were significant (≈200 kJ/m 3 ), suggesting that a different, much larger driving force must be responsible. Reduction in defect energy has been proposed as an alternative. However, vacancy and dislocation densities must be exceptionally high to significantly exceed the strain energy and do not provide obvious orientation selection mechanisms. Nanotwins in reported densities are shown to provide greater driving force (≈1000 kJ/m 3 ) and may account for orientation selection. The large difference between the calculated strain and defect energies and the driving force for grain growth (21,100 kJ/m 3 ) casts doubt on the applicability of a simple thermodynamic model of texture transformation.

  17. Fabrication of hollow-sphere films of wurtzite CuInS{sub 2} on copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Shuijin, E-mail: shjlei@ncu.edu.cn [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Wang, Chunying [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Huang, Qiang [School of Electromechanical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Liu, Lei; Ge, Yang; Tang, Qingliu; Cheng, Baochang; Xiao, Yanhe; Zhou, Lang [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China)

    2013-12-16

    As important semiconductors, I–III–VI{sub 2} compounds have attracted wide attention, among which the wurtzite structured CuInS{sub 2} has been the research focus due to its metastable phase. In this paper, the wurtzite CuInS{sub 2} hollow-sphere films have been successfully prepared on copper substrate in a self-designed solvothermal detached system. The films of Cu(OH){sub 2} one-dimensional nanostructure arrays and thioacetamide were used as the precursors and triethylene glycol was used as the solvent. Experiments showed that the amount of indium trichloride played a determinative role in the final morphology of the products. Meanwhile, the one-dimensional nanostructure arrays and the detached solvothermal system have great influences on the crystal shape as well. Based on the experimental results, a possible formation mechanism for the CuInS{sub 2} hollow spheres was also proposed. The UV–Vis absorption spectrum showed a broad absorption over the entire visible light and extending into the near-infrared region and presented the band gap of 1.53 eV for the as-prepared wurtzite CuInS{sub 2}, which indicates the potential applications in solar cells. - Highlights: • A self-designed detached system along with solvothermal treatment was developed. • Wurtzite CuInS{sub 2} hollow-sphere films were successfully fabricated on Cu substrate. • The detached system and InCl{sub 3} usage were crucial for the hollow spheres. • The broadband absorption and 1.53 eV band-gap indicates its potentials in PV.

  18. Amplification of light emission of chiral pyridine Eu(III) complex by copper nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Reisfeld, Renata; Levchenko, Viktoria [Institute of Chemistry, The Hebrew University of Jerusalem, Givat Ram, Jerusalem 91904 (Israel); Piccinelli, Fabio; Bettinelli, Marco [Laboratorio Materiali Luminescenti, DB, Universita di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy)

    2016-02-15

    We outline the applications of lanthanides luminescence in a number of modern fields. The intensity of the luminescence of the expensive lanthanides can be increased by their interaction with nanoparticles of inexpensive copper. As a typical example the chiral pyridine-based Eu{sup 3+} complex was incorporated into amorphous films of polyvinyl alcohol with hydroxyethyl cellulose. The luminescence intensity of the complex is increased by three hundred percent by its interaction with copper nanoparticles. The synthesis and steady state spectroscopy of the materials are presented. - Highlights: • Nanoparticles of copper were for the first time synthesized at 80 °C. • Copper NPs were incorporated with a luminescent Eu{sup 3+} complex in a polymeric matrix. • The films produced were characterized by photoluminescence spectroscopy. • The luminescence of Eu{sup 3+} complex with Cu NPs is 3 times higher than the original one.

  19. IR spectroscopy studies of silver and copper nano-films

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Fanzhen

    2007-01-10

    The present work is focused on the infrared optical properties of thin Ag and Cu films grown on MgO(001) and the Surface-Enhanced Infrared Absorption (SEIRA) of CO on these metal films. During both the deposition of the metal films onto MgO(001) and gas exposure to the metal films at low temperatures (<100 K) in Ultra High Vacuum (UHV), infrared spectra were captured in situ in transmission or reflection geometry. Afterwards the surface morphology of the films was examined ex situ by atomic force microscopy (AFM). For the first time, an infrared reflectance minimum was found during the metal film growth. The infrared optical properties of some films can be described by the Drude-type model or the Effective Medium Model. The Ag films show different surface morphologies at different substrate temperatures and at different final thicknesses. Also the SEIRA of CO adsorbed on Ag films is strongly related to the surface morphologies. The Cu films prepared at room temperature show island like surface morphology. SEIRA of CO adsorbed on Cu films shows differences depending on the Cu island size. (orig.)

  20. Development of technique for AR coating and nickel and copper metallization of solar cells. FPS Project: Product development

    Science.gov (United States)

    Taylor, W.

    1982-01-01

    Printed nickel overplated with copper and applied on top of a predeposited silicon nitride antireflective coating system for metallizing solar cells was analyzed. The ESL D and E paste formulations, and the new formulations F, G, H, and D-1 were evaluated. The nickel thick films were tested after firing for stability in the cleaning and plating solutions used in the Vanguard-Pacific brush plating process. It was found that the films are very sensitive to the leaning and alkaline copper solutions. Less sensitivity was displayed to the neutral copper solution. Microscopic and SEM observations show segregation of frit at the silicon nitride thick film interface with loose frit residues after lifting off plated grid lines.

  1. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  2. Two-step flash light sintering of copper nanoparticle ink to remove substrate warping

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Chung-Hyeon; Joo, Sung-Jun [Department of Mechanical Convergence Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kim, Hak-Sung, E-mail: kima@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2016-10-30

    Highlights: • We performed the two-step flash light sintering for copper nanoparticle ink to remove substrate warping. • 12 J/cm{sup 2} of preheating and 7 J/cm{sup 2} of main sintering energies were determined as optimum conditions to sinter the copper nanoparticle ink. • The resistivity of two-step sintered copper nanoparticle ink was 3.81 μΩ cm with 5B adhesion level, 2.3 times greater than that of bulk copper. • The two-step sintered case showed a high conductivity without any substrate warping. - Abstract: A two-step flash light sintering process was devised to reduce the warping of polymer substrates during the sintering of copper nanoparticle ink. To determine the optimum sintering conditions of the copper nanoparticle ink, the flash light irradiation conditions (pulse power, pulse number, on-time, and off-time) were varied and optimized. In order to monitor the flash light sintering process, in situ resistance and temperature monitoring of copper nanoink were conducted during the flash light sintering process. Also, a transient heat transfer analysis was performed by using the finite-element program ABAQUS to predict the temperature changes of copper nanoink and polymer substrate. The microstructures of the sintered copper nanoink films were analyzed by scanning electron microscopy. Additionally, an X-ray diffraction and Fourier transform infrared spectroscopy were used to characterize the crystal phase change of the sintered copper nanoparticles. The resulting two-step flash light sintered copper nanoink films exhibited a low resistivity (3.81 μΩ cm, 2.3 times of that of bulk copper) and 5B level of adhesion strength without warping of the polymer substrate.

  3. Multilevel Dual Damascene copper interconnections

    Science.gov (United States)

    Lakshminarayanan, S.

    C, 500oC and 600oC for Ti, TiN and Ta barriers respectively. Via resistivity on the order of 10-9/ /Omegacm2 was measured for Cu/Ta/Cu interfaces and no degradation in the via resistance was observed upto 600oC on the 2 μm and 3 μm wide contact windows. Characterization of diode leakage and subthreshold currents of CMOS transistors fabricated with Ta adhesion layers, showed the failure of the Ta barrier at 450oC. Despite the good barrier performance of the CVD TiN films, obtaining low contact resistivity may be a concern. The potential use of Cu-Mg alloy as the backend metallization has also been studied. Fully encapsulated wiring has been fabricated by causing the Mg to out- diffuse towards the Cu/SiO2 interfaces and the free copper surface. The inter-connects exhibited good stability and oxidation resistance, but via resistances were extremely high, probably due to the presence of insulating films like MgO or MgF2 at the interface between the two metal levels. It may be possible to decrease the via resistance to values comparable to Cu/Ta/Cu by altering the process flow and using a suitable via clean. When used at the contact level, undesirable interaction with the CoSi2 film was observed at temperatures as low as 350oC. Another problem was the high contact resistance at the Cu-Mg/CoSi2 interface. Hence the use of this alloy as a contact fill material is not feasible at this time. An additional barrier layer may be required between the Cu-Mg and CoSi2 films to protect the integrity of the silicide and provide low contact resistance.

  4. Long-term corrosion of copper in a dilute anaerobic sulfide solution

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.; Qin, Z. [Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7 (Canada); Shoesmith, D.W., E-mail: dwshoesm@uwo.ca [Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7 (Canada)

    2011-09-30

    The mechanism of corrosion of oxygen-free copper has been studied in stagnant aqueous sulfide solutions using corrosion potential and electrochemical impedance spectroscopy (EIS) measurements. Film structure and composition were examined on surfaces and on cross-sections prepared by focused ion beam (FIB) milling using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Experiments were conducted in anaerobic 5 x 10{sup -5} mol dm{sup -3} Na{sub 2}S + 0.1 mol dm{sup -3} NaCl solutions for exposure periods up to 4000 h ({approx}167 days) to mimic (at least partially) the conditions that could develop on a copper nuclear fuel waste container in a deep geologic repository. The corrosion film formed was a single cellular Cu{sub 2}S layer with a non-uniform thickness. The film thickness increased approximately linearly with immersion time, which implied that the sulfide film formed on the Cu surface is non-protective under these conditions up to this exposure time. The film growth process was controlled by HS{sup -} diffusion partially in the aqueous solution in the pores in the cellular sulfide film and partially in the bulk of the aqueous solution.

  5. Morphologies and wetting properties of copper film with 3D porous micro-nano hierarchical structure prepared by electrochemical deposition

    International Nuclear Information System (INIS)

    Wang, Hongbin; Wang, Ning; Hang, Tao; Li, Ming

    2016-01-01

    Highlights: • A 3D porous micro-nano hierarchical structure Cu films were prepared. • The evolution of morphology and wettability with deposition time was reported. • The effects of EDA on the microscopic morphology were revealed. • A high contact angle of 162.1° was measured when deposition time is 5 s. • The mechanism of super-hydrophobicity was illustrated by two classical models. - Abstract: Three-dimensional porous micro-nano hierarchical structure Cu films were prepared by electrochemical deposition with the Hydrogen bubble dynamic template. The morphologies of the deposited films characterized by Scanning Electronic Microscopy (SEM) exhibit a porous micro-nano hierarchical structure, which consists of three levels in different size scales, namely the honeycomb-like microstructure, the dendritic substructure and the nano particles. Besides, the factors which influenced the microscopic morphology were studied, including the deposition time and the additive Ethylene diamine. By measuring the water contact angle, the porous copper films were found to be super-hydrophobic. The maximum of the contact angles could reach as high as 162.1°. An empirical correlation between morphologies and wetting properties was revealed for the first time. The pore diameter increased simultaneously with the deposition time while the contact angle decreased. The mechanism was illustrated by two classical models. Such super-hydrophobic three-dimensional hierarchical micro-nano structure is expected to have practical application in industry.

  6. Step driven competitive epitaxial and self-limited growth of graphene on copper surface

    Directory of Open Access Journals (Sweden)

    Lili Fan

    2011-09-01

    Full Text Available The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible.

  7. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    Energy Technology Data Exchange (ETDEWEB)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable β-W phase.

  8. ESD coating of copper with TiC and TiB2 based ceramic matrix composites

    Science.gov (United States)

    Talas, S.; Mertgenç, E.; Gökçe, B.

    2016-08-01

    In automotive industry, the spot welding is a general practice to join smaller sections of a car. This welding is specifically carried out in short time and in an elevated number with certain pressure applied on copper electrodes. In addition, copper electrodes are expected to endure against cyclic mechanical pressure and temperature that is released during the passage of the current. The deformation and oxidation behaviour of copper electrodes during service appear with increasing temperature of medium and they also need to be cleaned and cooled or replaced for the continuation of joining process. The coating of copper electrodes with ceramic matrix composites can provide alternative excellent high temperature strength and ensures both economic and efficient use of resources. This study shows that the ESD coating of copper electrodes with a continuous film of ceramic phase ensures an improved resistance to thermal effects during the service and the change in content of film may be critical for cyclic alloying.

  9. Selective laser pyrolysis of metallo-organics as a method of forming patterned thin film superconductors

    International Nuclear Information System (INIS)

    Mantese, J.V.; Catalan, A.B.; Sell, J.A.; Meyer, M.S.; Mance, A.M.

    1990-01-01

    This patent describes a method for forming patterned films of superconductive materials forming a solution from the neodecanoates of yttrium, barium and copper. The neodecanoates forming an oxide mixture exhibiting superconductive properties upon subsequent thermal decompositions wherein the oxide mixture is characterized by a ratio of yttrium:barium:copper of approximately 1:2:4, the solution comprising an organic solvent such as xylene; adding to the solution an appropriate dye, depositing a film of the solution having the dye onto a strontium titanate substrate; exposing selective regions of the film with an Argon laser emitting the wavelength of light, such that the exposed regions of the film become insoluble in the xylene; immersing the film into the xylene so that the soluble; unexposed regions of the film are removed from the substrate; heating the film to thermally decompose the neodecanoates into a film containing yttrium, barium and copper oxides; to promote recrystallization and grain growth of the metal oxides within the film and induce a change therein by which the film exhibits superconducting properties

  10. Optical properties of CuSe thin films - band gap determination

    Directory of Open Access Journals (Sweden)

    Petrović Milica

    2017-01-01

    Full Text Available Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III45003

  11. Covalentely Attached Multilayer Films Comprising Phthalocyanine and Their Photoelectron Conversion Properties

    Institute of Scientific and Technical Information of China (English)

    ZANG Mao-feng; YAO Qiao-hong; YANG Zhao-hui; HUANG Chun-hui; CAO Wei-xiao

    2004-01-01

    The photosensitive multilayer films from sulfonated metal-free, sulfonated copper-, and sulfonated nickel-phthalocyanines were fabricated with diazoresin layer by layer on a substrate via electrostatic interaction by the self-assembly technique. Under UV irradiation, the linkage nature between the layers of the film is converted from the electrostatic bonding to covalent bonding. The covalently attached multilayer films are very stable towards polar solvents and salt aqueous solutions. The photovoltaic properties of the covalently attached film can be determined by means of a traditional three-electrode photoelectrochemical cell in aqueous solutions with KCl as the supporting electrolyte. The photocurrent determination has shown that the sulfonated copper-containing phthalocyanine films possess a higher photocurrent value than sulfonated metalfree and sulfonated nickel-containing phthalocyanine films.

  12. XPS investigation of copper corrosion in hydro-carbonate electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Sieber, I.; Hildebrand, H.; Schmuki, P. [University Erlangen-Nuremberg, Martensstr.7, D-91058 Erlangen (Germany); Kaluzhina, S.A. [Voronezh State University, University Sq.1, 394006 Voronezh (Russian Federation)

    2004-07-01

    Problems of corrosion and effective methods of metal protection are still actual in the present days. Special interest is in copper material, which as basic component of heat exchanger constructions can corrode in contact with carbonate water. The intensity of the corrosion destruction depends on the carbon water concentration and thermal conditions in the system. The present paper provides new insights into the role of the HCO{sub 3}{sup -} - ions in the corrosion process of copper. Copper samples after anodic oxidation in 0.02 and 0.1 M NaHCO{sub 3} have been studied using XPS and SEM. The presence of carbonate compounds in the passive film in 0.1 M NaHCO{sub 3} was established by XPS analysis all over the surface. These compounds are responsible for the protective character of the passive film towards local destruction. In the 0.02 M NaHCO{sub 3} electrolyte carbonate compounds were not found at places of pit formation after multi-cycling of the sample. (authors)

  13. Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Pizzocchero, Filippo; Jessen, Bjarke Sørensen

    2014-01-01

    noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows......- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two....... Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial...

  14. Corrosion and biofouling resistance evaluation of 90-10 copper-nickel

    Energy Technology Data Exchange (ETDEWEB)

    Powell, Carol [Consultant to Copper Development Association, UK, Square Covert, Caynham, Ludlow, Shropshire (United Kingdom)

    2004-07-01

    Copper-nickel alloys for marine use were developed for naval applications in the early part of the 20. century with a view to improving the corrosion resistance of condenser tubes and seawater piping. They still enjoy widespread use today not only for many navies but also in commercial shipping, floating production, storage and off loading vessels (FPSOs), and in multistage flash desalination. The two popular alloys contain 90% or 70% copper and differ in strength and maximum sea water velocity levels they can handle but it is the 90-10 copper-nickel (CuNi10Fe1Mn) which is the more economic and extensively used. An additional benefit of this alloy is its high resistance to biofouling: in recent years this has led to sheathing developments particularly for structures and boat hulls. This paper provides a review of the corrosion and biofouling resistance of 90-10 copper-nickel based on laboratory test data and documented experience of the alloy in marine environments. Particular attention is given to exposure trials over 8 years in Langstone Harbour, UK, which have recently been completed by Portsmouth University on behalf of the Nickel Institute. These examined four sheathing products; plate and foil as well as two composite products with rubber backing. The latter involved copper-nickel granules and slit sheet. The trial results are consistent with the behaviour of the alloy in the overall review. There is an inherent high resistance to marine biofouling when freely exposed. Prolonged exposure to quiet conditions can result in some growth of marine organisms but this is loosely attached and can readily be removed by wiping or a light scraping. The good corrosion resistance of 90-10 copper-nickel in sea water is also confirmed and associated with the formation of a thin, complex, protective and predominantly cuprous oxide surface film, which forms and matures naturally on exposure to seawater. Sound initial oxide film formation is also known to help protect against

  15. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  16. Influence of branched quaternary ammonium surfactant molecules as levelers for copper electroplating from acidic sulfate bath

    International Nuclear Information System (INIS)

    Wang, An-yin; Chen, Biao; Fang, Lei; Yu, Jian-jun; Wang, Li-min

    2013-01-01

    A family of branched quaternary ammonium surfactants (compounds 1a–1c) with different carbon chains were synthesized for levelers applied in copper electroplating. Their inhibitory actions on copper electroplating were characterized by cyclic voltammetry (CV). Compound 1b, as representative structure type, was tested by means of different electrochemical methods including CV, polarization curve and electrochemical impedance spectroscopy (EIS) with different concentrations. The interaction between compound 1b and copper surface was investigated using atomic force microscope (AFM) and X-ray photoelectron spectra (XPS). The results indicated that our newly synthesized compounds, particular 1b, were effective levelers used for copper electroplating. Compound 1b could adsorb on copper surface to form an adsorption layer. The adsorption behavior of compound 1b on copper surface indicated that compound 1b could inhibit the copper electrodeposition, which provided favorable conditions used as a leveler. Moreover, the addition of compound 1b could increase the cathodic polarization, which was attributed to the adsorption of compound 1b during copper electroplating process. In addition, various surface morphologies and crystalline orientation of the plated copper films caused by different concentrations of compound 1b were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Effects of compound 1b on refining the grain size and changing the preferential orientation of the plated copper films were exhibited

  17. Microstructure, Slip Systems and Yield Stress Anisotropy in Plastic Deformation

    DEFF Research Database (Denmark)

    Winther, Grethe; You, Ze Sheng; Lu, Lei

    The highly anisotropic microstructures in nanotwinned copper produced by electrodeposition provide an excellent opportunity to evaluate models for microstructurally induced mechanical anisotropy. A crystal plasticity model originally developed for the integration of deformation induced dislocatio...... boundaries with texture is applied to account for the effects of texture as well as twin and grain boundaries, providing good qualitative agreement with experimental yield stress and yield stress anisotropy data....

  18. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  19. Porous anodic film formation on an Al-3.5 wt% Cu alloy

    Energy Technology Data Exchange (ETDEWEB)

    Paez, M.A.; Bustos, O.; Thompson, G.E.; Skeldon, P.; Shimizu, K.; Wood, G.C.

    2000-03-01

    Anodic film growth has been undertaken on an electropolished Al-3.5 wt % Cu alloy to determine the influence of copper in solid solution on the anodizing behavior. At the commencement of anodizing of the electropolished alloy, in the presence of interfacial enrichment of copper, Al{sup 3+} and Cu{sup 2+} ions egress and O{sup 2{minus}} ion ingress proceed; film growth occurs at the alloy/film interface though O{sup 2{minus}} ion ingress, with outwardly mobile Al{sup 3+} and Cu{sup 2+} ions ejected at the film/electrolyte interface, and field-assisted dissolution proceeding at the bases of pores. Oxidation of copper, in the presence of the enriched layer, is also associated with O{sub 2} gas generation, leading to development of oxygen-filled voids. As a result of significant pressures in the voids, film rupture proceeds, with electrolyte access to the alloy, dissolution of the enriched interfacial layer and re-anodizing. The consequence of such processes in the development of anodic films of increased porosity and reduced efficiency of film formation compared with anodizing of superpure aluminum under similar conditions.

  20. Low cost chemical oxygen demand sensor based on electrodeposited nano-copper film

    Directory of Open Access Journals (Sweden)

    Hamdy H. Hassan

    2018-02-01

    Full Text Available A commercially available copper electrical cable and pure Cu disk were used as substrates for the electrodeposition of copper nanoparticles (nano-Cu. The surface morphology of the prepared nano-Cu/Cu electrodes was investigated by scanning electron microscope (SEM and energy dispersive X-ray spectrometer (EDX. The bare copper substrates and the nano-copper modified electrodes were utilized and optimized for electrochemical assay of chemical oxygen demand (COD using glycine as a standard. A comparison was made among the four electrodes (i.e., bare and nano-Cu coated copper cable and pure copper disk as potential COD sensors. The oxidation behavior of glycine was investigated on the surface of the prepared sensors using linear sweep voltammetry (LSV. The results indicate significant enhancement of the electrochemical oxidation of glycine by the deposited nano-Cu. The effects of different deposition parameters, such as Cu2+ concentration, deposition potential, deposition time, pH, and scan rate on the response of the prepared sensors were investigated. Under optimized conditions, the optimal nano-Cu based COD sensor exhibited a linear range of 2–595 mg/L, lower limit of detection (LOD as low as 1.07 mg/L (S/N = 3. The developed method exhibited high tolerance level to Cl− ion where 1.0 M Cl− exhibited minimal influence. The sensor was utilized for the detection of COD in different real water samples. The results obtained were validated using the standard dichromate method.

  1. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  2. Phosphate ions as inhibiting agents for copper corrosion in chlorinated tap water

    International Nuclear Information System (INIS)

    Yohai, L.; Schreiner, W.H.; Vázquez, M.; Valcarce, M.B.

    2013-01-01

    PO 4 3− ions as corrosion inhibitor were investigated on copper in tap water in the presence of NaClO. The inhibitor was evaluated by electrochemical techniques and weight loss tests. Raman spectroscopy and X-ray photoelectron spectroscopy were used to study the passive layer. In inhibited tap water, the passive layer is thick and compact if NaClO is present. Weight-loss tests showed the inhibition of uniform dissolution and no pitting attack. When adding NaClO, Cu 3 (PO 4 ) 2 is incorporated to the passive film. Thus, phosphate ions are effective as inhibitors for copper in tap water, even when using high dosages of biocides. - Highlights: ► Changes in the copper corrosion after adding phosphate to tap water were analyzed. ► When NaClO and phosphates are present, Cu 3 (PO 4 ) 2 participates of the surface film. ► In the absence of biocide the surface film contains a mixture of Cu 2 O, CuO and Cu(OH) 2 . ► PO 4 3− is an effective inhibitor for Cu in tap water containing high NaClO dosages

  3. Corrosion of copper and copper alloys in a basaltic repository environment

    International Nuclear Information System (INIS)

    Brehm, W.F.

    1990-01-01

    Corrosion testing done on copper and copper alloys in support of the basalt repository program is discussed. Tests were performed under anoxic conditions at 50C, 100C, 150C and 200C in the presence of a saturated basalt-bentonite packing. Tests were also performed in an air/steam mixture at temperatures between 150C and 200C. Some tests, particularly those in air/steam mixtures, were done in the presence of radiation fields of 10 2 , 10 3 or 10 4 rad/h. Exposure periods were up to 28 months. A synthetic groundwater, Grande Ronde ≠4, was used. The materials studied were ASTM B402μm·a for copper and 17 μm·a for cupronickel, but the average rates were muμm·a was obtained. The rates at longer times were less than a third of this value. Corrosion increased monotonically with time and temperature. Chalcocite (Cu 2 S) was the corrosion product at 200C. There was no detectable radiation effect, and no pitting was observed. In air/steam corrosion was uniform with no pitting. Linear corrosion was observed for pure copper. The maximum corrosion penetration after 25 months was 0.13 mm at 300C; cupronickel corroded more slowly, with a maximum penetration of 0.045mm after 25 months. Cuprite (Cu 2 O) and tenorite (CuO) were identified on cupronickel, but only Cu 2 O on copper. A pronounced radiation effect was seen at 250C, but not at 150C; the surface film morphology was different under irradiation. In the short term the presence of packing increased the corrosion rate. 5 refs

  4. Photo-induced changes in nano-copper oxide for optoelectronic applications

    Science.gov (United States)

    Hendi, A. A.; Rashad, M.

    2018-06-01

    Copper oxide (CuO) nanoparticles (NPs) have been prepared using microwave irradiation. A mother material was copper nitrate in distilled water. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used for characterizing the NPs powders. Thermal Gravimetric Analysis (TGA) and Differential Thermal Analysis (DTA) were measured for as-prepared CuO NPs. The obtained oxides NPs were confirmed produced during chemical precipitation by these characterizions. These NPs were dropped on top of glass substrate for measuring the optical characterizions. Both linear and nonlinear optical properties of the as-prepared CuO NP films were studied. The optical energy gap of the as-prepared CuO NP films is equal to 3.98 eV, which is higher than that of the bulk material. The effect of ultraviolet (UV) light irradiation on the CuO NP films was investigated at 2 and 5 h for study the photo-induced effect. The optical properties of CuO NP films were measured as a function of these UV irradiation time. The optical constants for as-prepared and irradiated CuO NP films were calculated which reflect the affect of UV irradiation time. As observed from these optical results, a highly forced for optoelectronic applications.

  5. In situ observations of crack arrest and bridging by nanoscale twins in copper thin films

    International Nuclear Information System (INIS)

    Kim, Seong-Woong; Li Xiaoyan; Gao Huajian; Kumar, Sharvan

    2012-01-01

    In situ tensile experiments in a transmission electron microscope revealed that micro-cracks in ultrafine grained, free-standing, thin copper foils containing nanoscale twins initiated in matrix domains separated by the twins and then arrested at twin boundaries as twin boundary sliding proceeded. The adjacent microcracks eventually coalesced through shear failure of the bridging twins. To investigate the atomic mechanism of this rarely seen nanoscale crack bridging behavior, molecular dynamics simulations were performed to show that during crack propagation twin boundaries are impinged upon by numerous dislocations from the plastically deforming matrix. These dislocations react at the interface and evolve into substantially impenetrable dislocation walls that strongly confine crack nucleation and resist crack propagation, leading to the experimentally observed crack bridging behavior. The present results raise an approach to significantly toughening polycrystalline thin films by incorporating nanoscale twin structures into individual grains that serve as crack bridging ligaments.

  6. Plasma Deposition and Characterization of Copper-doped Cobalt Oxide Nanocatalysts

    Directory of Open Access Journals (Sweden)

    Jacek TYCZKOWSKI

    2013-09-01

    Full Text Available A series of pure and copper-doped cobalt oxide films was prepared by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD. The effect of Cu-doping on the chemical structure and morphology of the deposited films was investigated. Raman and FTIR spectroscopies were used to characterize the chemical structure and morphology of the produced films. The bulk composition and homogeneity of the samples were investigated by energy dispersive X-ray microanalysis (EDX, and X-ray photoelectron spectroscopy (XPS was employed to assess the surface chemical composition of pure and doped materials. The obtained results permit to affirm that the PEMOCVD technique is a simple, versatile and efficient method for providing homogeneous layers of cobalt oxides with a different content of copper. It has been found that pure cobalt oxide films mainly contain Co3O4 in the form of nanoclusters whereas the films doped with Cu are much more complex, and CoOx (also Co3O4, mixed Co-Cu oxides and CuOx nanoclusters are detected in them. Preliminary catalytical tests show that Cu-doped cobalt oxide films allow to initiate catalytic combustion of n-hexane at a lower temperature compared to the pure cobalt oxide (Co3O4 films. From what has been stated above, the plasma-deposited thin films of Cu-doped cobalt oxides pave the way towards a new class of nanomaterials with interesting catalytic properties. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.2320

  7. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  8. New configuration for efficient and durable copper coating on the outer surface of a tube

    Directory of Open Access Journals (Sweden)

    Irfan Ahmad

    2017-03-01

    Full Text Available A well-adhered copper coating on stainless steel power coupler parts is required in superconducting radio frequency (SRF accelerators. Radio frequency power coupler parts are complex, tubelike stainless steel structures, which require copper coating on their outer and inner surfaces. Conventional copper electroplating sometimes produces films with inadequate adhesion strength for SRF applications. Electroplating also requires a thin nickel strike layer under the copper coating, whose magnetic properties can be detrimental to SRF applications. Coaxial energetic deposition (CED and sputtering methods have demonstrated efficient conformal coating on the inner surfaces of tubes but coating the outer surface of a tube is challenging because these coating methods are line of sight. When the substrate is off axis and the plasma source is on axis, only a small section of the substrate’s outer surface is exposed to the source cathode. The conventional approach is to rotate the tube to achieve uniformity across the outer surface. This method results in poor film thickness uniformity and wastes most of the source plasma. Alameda Applied Sciences Corporation (AASC has developed a novel configuration called hollow external cathode CED (HEC-CED to overcome these issues. HEC-CED produces a film with uniform thickness and efficiently uses all eroded source material. The Cu film deposited on the outside of a stainless steel tube using the new HEC-CED configuration survived a high pressure water rinse adhesion test. HEC-CED can be used to coat the outside of any cylindrical structure.

  9. Polypyrrole Coated Cellulosic Substrate Modified by Copper Oxide as Electrode for Nitrate Electroreduction

    Science.gov (United States)

    Hamam, A.; Oukil, D.; Dib, A.; Hammache, H.; Makhloufi, L.; Saidani, B.

    2015-08-01

    The aim of this work is to synthesize polypyrrole (PPy) films on nonconducting cellulosic substrate and modified by copper oxide particles for use in the nitrate electroreduction process. Firstly, the chemical polymerization of polypyrrole onto cellulosic substrate is conducted by using FeCl3 as an oxidant and pyrrole as monomer. The thickness and topography of the different PPy films obtained were estimated using a profilometer apparatus. The electrochemical reactivity of the obtained electrodes was tested by voltamperometry technique and electrochemical impedance spectroscopy. Secondly, the modification of the PPy film surface by incorporation of copper oxide particles is conducted by applying a galvanostatic procedure from a CuCl2 solution. The SEM, EDX and XRD analysis showed the presence of CuO particles in the polymer films with dimensions less than 50 nm. From cyclic voltamperometry experiments, the composite activity for the nitrate electroreduction reaction was evaluated and the peak of nitrate reduction is found to vary linearly with initial nitrate concentration.

  10. Study of copper and purine-copper complexes on modified carbon electrodes by cyclic and elimination voltammetry

    Czech Academy of Sciences Publication Activity Database

    Trnková, L.; Zerzánková, L.; Dyčka, F.; Mikelová, R.; Jelen, František

    2008-01-01

    Roč. 8, č. 1 (2008), s. 429-444 ISSN 1424-8220 R&D Projects: GA AV ČR(CZ) IAA100040602; GA AV ČR(CZ) IAA400040804 Institutional research plan: CEZ:AV0Z50040507; CEZ:AV0Z50040702 Keywords : copper-purine complexes * paraffin-impregnated graphite electrode * mercury-film electrode Subject RIV: BO - Biophysics Impact factor: 1.870, year: 2008

  11. Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

    2015-09-05

    Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

  12. Effect of Copper on the Carrier Lifetime in Black Silicon

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Persheyev, Saydulla

    2011-01-01

    Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a......-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced....

  13. Field dependent surface resistance of niobium on copper cavities

    Directory of Open Access Journals (Sweden)

    T. Junginger

    2015-07-01

    Full Text Available The surface resistance R_{S} of superconducting cavities prepared by sputter coating a niobium film on a copper substrate increases significantly stronger with the applied rf field compared to cavities of bulk material. A possible cause is that the thermal boundary resistance between the copper substrate and the niobium film induces heating of the inner cavity wall, resulting in a higher R_{S}. Introducing helium gas in the cavity, and measuring its pressure as a function of applied field allowed to conclude that the inner surface of the cavity is heated up by less than 120 mK when R_{S} increases with E_{acc} by 100  nΩ. This is more than one order of magnitude less than what one would expect from global heating. Additionally, the effects of cooldown speed and low temperature baking have been investigated in the framework of these experiments. It is shown that for the current state of the art niobium on copper cavities there is only a detrimental effect of low temperature baking. A fast cooldown results in a lowered R_{S}.

  14. Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

    Science.gov (United States)

    Khare, Ankur

    Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

  15. Electrodeposited copper oxide films: Effect of bath pH on grain orientation and orientation-dependent interfacial behavior

    International Nuclear Information System (INIS)

    Wang, L.C.; Tacconi, N.R. de; Chenthamarakshan, C.R.; Rajeshwar, K.; Tao, M.

    2007-01-01

    Copper (I) oxide (Cu 2 O) films were cathodically electrodeposited on Sn-doped indium oxide substrates. The influence of electrodeposition bath pH on grain orientation and crystallite shape was carefully re-examined using X-ray diffraction and scanning electron microscopy. In addition to the (100) and (111) preferred orientations identified in two previous sets of studies, as the bath pH was varied in the present study from ∼ 7.5 to ∼ 12, a third preferred orientation, (110), was identified in a narrow pH range, ∼ 9.4 to ∼ 9.9. A remarkable shift in the flat-band potential (spanning ∼ 500 mV) was measured in a non-aqueous electrolyte medium for the various Cu 2 O samples obtained from baths of varying pH

  16. Correlation between optical and structural properties of copper oxide electrodeposited on ITO glass

    Energy Technology Data Exchange (ETDEWEB)

    Messaoudi, O., E-mail: olfamassaoudi@gmail.com [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Makhlouf, H.; Souissi, A.; Ben assaker, I.; Karyaoui, M. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Bardaoui, A. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Physics department, Taif University (Saudi Arabia); Oueslati, M. [Unité de nano matériaux et photoniques, Faculté des Sciences de Tunis, ElManar1, 2092 Tunis (Tunisia); Chtourou, R. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia)

    2014-10-25

    Highlights: • Copper oxide films were grown by electrodeposition method with different applied potential. • Forouhi and Bloomer ellipsometric model were used. • Correlation between structural and optical proprieties was done. - Abstract: In this paper we study the growth of copper oxide (Cu{sub 2}O) thin films on indium tin oxide (ITO)-coated glass substrate by electrochemical deposition. We vary the applied potential from −0.50 to −0.60 V vs. Ag/AgCl in order to have a pure Cu{sub 2}O. The copper oxide thin films properties are obtained using Spectroscopic Ellipsometry (SE) in the frame of the Forouhi and Bloomer model. This model demonstrates that depending on the applied cathodic potential pure or mixed phases of CuO and Cu{sub 2}O can be obtained. Structural, morphological and optical properties are performed in order to confirm the SE results. X-ray diffraction analysis of the films reveals a mixed phase for a potential lower than −0.60V vs. Ag/AgCl while a high purity is obtained for this last potential. The optical band gap energy (E{sub g}) is evaluated using the tauc relation. Pure Cu{sub 2}O having a band gap of E{sub g} = 2.5 eV and a thickness around 900 nm are therefore successfully obtained with an applied potential of −0.60 V. Raman measurements show the characteristic modes of Cu{sub 2}O with a contribution of CuO modes at 618 cm{sup −1}. The intensity of the CuO modes decreases as the applied cathodic potential increases, leading to pure copper oxide layers.

  17. Solid state de-wetting observed for vapor deposited copper films on carbon substrates

    International Nuclear Information System (INIS)

    Schrank, C.; Eisenmenger-Sittner, C.; Neubauer, E.; Bangert, H.; Bergauer, A.

    2004-01-01

    Copper-Carbon composites are a good example for novel materials consisting of components with extremely different physical and chemical properties. They have a high potential for an application as heat sinks for electronic components, but the joining of the two materials is a difficult task. To obtain reasonable mechanical and thermal contact between copper and carbon the following route was chosen. First glassy-carbon substrates were subjected to an RF-Nitrogen plasma treatment. Then 300 nm thick copper coatings were sputter-deposited on the plasma treated surface within the same vacuum chamber. Finally, the samples were removed from the deposition chamber and either investigated immediately or thermally annealed at 850 deg. C under high vacuum conditions (10 -4 Pa). While non-annealed copper-coatings were continuous and showed excellent adhesion values of approximately 700 N/cm 2 , the heat treated samples lose their continuity by a de-wetting process. At the beginning holes are formed, then a labyrinth-like morphology develops and finally the coating consists of isolated droplets. All these processes occur well below the melting temperature of copper and were observed by AFM and SEM. The mechanism of this solid-state de-wetting process is investigated in relation to the recent literature on de-wetting and its consequences on the manufacturing of copper-carbon composites are discussed

  18. Smoothing an isolated interface of cobalt-copper under irradiation by low-energy argon ions

    International Nuclear Information System (INIS)

    Stognij, A.I.; Novitskij, N.N.; Stukalov, O.M.

    2003-01-01

    Multilayer film structures, i.e. gold layer-copper-cobalt, are considered. It is shown that the structure, where cobalt surface prior to copper layer deposition was subjected to additional irradiation by a flow of argon ions, features the smoothest surface. The conclusion is made about smoothing out of cobalt-copper interface as a result of multiple collisions of argon slow ions and cobalt atoms during braking within two or three upper atomic rows of the cobalt layer [ru

  19. Electrochemical characterization of anode passivation mechanisms in copper electrorefining

    Science.gov (United States)

    Moats, Michael Scott

    Anode passivation can decrease productivity and quality while increasing costs in modern copper electrorefineries. This investigation utilized electrochemical techniques to characterize the passivation behavior of anode samples from ten different operating companies. It is believed that this collection of anodes is the most diverse set ever to be assembled to study the effect of anode composition on passivation. Chronopotentiometry was the main electrochemical technique, employing a current density of 3820 A m-2. From statistical analysis of the passivation characteristics, increasing selenium, tellurium, silver, lead and nickel were shown to accelerate passivation. Arsenic was the only anode impurity that inhibited passivation. Oxygen was shown to accelerate passivation when increased from 500 to 1500 ppm, but further increases did not adversely affect passivation. Nine electrolyte variables were also examined. Increasing the copper, sulfuric acid or sulfate concentration of the electrolyte accelerated passivation. Arsenic in the electrolyte had no effect on passivation. Chloride and optimal concentrations of thiourea and glue delayed passivation. Linear sweep voltammetry, cyclic voltammetry, and impedance spectroscopy provided complementary information. Analysis of the electrochemical results led to the development of a unified passivation mechanism. Anode passivation results from the formation of inhibiting films. Careful examination of the potential details, especially those found in the oscillations just prior to passivation, demonstrated the importance of slimes, copper sulfate and copper oxide. Slimes confine dissolution to their pores and inhibit diffusion. This can lead to copper sulfate precipitation, which blocks more of the surface area. Copper oxide forms because of the resulting increase in potential at the interface between the copper sulfate and anode. Ultimate passivation occurs when the anode potential is high enough to stabilize the oxide film in

  20. Fabricating and strengthening the carbon nanotube/copper composite fibers with high strength and high electrical conductivity

    Science.gov (United States)

    Han, Baoshuai; Guo, Enyu; Xue, Xiang; Zhao, Zhiyong; Li, Tiejun; Xu, Yanjin; Luo, Liangshun; Hou, Hongliang

    2018-05-01

    Combining the excellent properties of carbon nanotube (CNT) and copper, CNT/Cu composite fibers were fabricated by physical vapor deposition (PVD) and rolling treatment. Dense and continuous copper film (∼2 μm) was coated on the surface of the CNT fibers by PVD, and rolling treatment was adopt to strengthen the CNT/Cu composite fibers. After the rolling treatment, the defects between the Cu grains and the CNT bundles were eliminated, and the structure of both the copper film and the core CNT fibers were optimized. The rolled CNT/Cu composite fibers possess high tensile effective strength (1.01 ± 0.13 GPa) and high electrical conductivity ((2.6 ± 0.3) × 107 S/m), and thus, this material may become a promising wire material.

  1. Ductile film delamination from compliant substrates using hard overlayers.

    Science.gov (United States)

    Cordill, M J; Marx, V M; Kirchlechner, C

    2014-11-28

    Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems.

  2. Phosphate ions as inhibiting agents for copper corrosion in chlorinated tap water

    Energy Technology Data Exchange (ETDEWEB)

    Yohai, L. [División Electroquímica y Corrosión, INTEMA, CONICET, UNMdP, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Schreiner, W.H. [Laboratório de Superfícies e Interfases, Departamento de Física, Universidade Federal do Paraná, 81531-990 Curitiba, PR (Brazil); Vázquez, M., E-mail: mvazquez@fi.mdp.edu.ar [División Electroquímica y Corrosión, INTEMA, CONICET, UNMdP, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Valcarce, M.B. [División Electroquímica y Corrosión, INTEMA, CONICET, UNMdP, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2013-05-15

    PO{sub 4}{sup 3−} ions as corrosion inhibitor were investigated on copper in tap water in the presence of NaClO. The inhibitor was evaluated by electrochemical techniques and weight loss tests. Raman spectroscopy and X-ray photoelectron spectroscopy were used to study the passive layer. In inhibited tap water, the passive layer is thick and compact if NaClO is present. Weight-loss tests showed the inhibition of uniform dissolution and no pitting attack. When adding NaClO, Cu{sub 3}(PO{sub 4}){sub 2} is incorporated to the passive film. Thus, phosphate ions are effective as inhibitors for copper in tap water, even when using high dosages of biocides. - Highlights: ► Changes in the copper corrosion after adding phosphate to tap water were analyzed. ► When NaClO and phosphates are present, Cu{sub 3}(PO{sub 4}){sub 2} participates of the surface film. ► In the absence of biocide the surface film contains a mixture of Cu{sub 2}O, CuO and Cu(OH){sub 2}. ► PO{sub 4}{sup 3−} is an effective inhibitor for Cu in tap water containing high NaClO dosages.

  3. RF Characterization of Niobium Films for Superconducting Cavities

    CERN Document Server

    Aull† , S; Doebert, S; Junginger, T; Ehiasarian, AP; Knobloch, J; Terenziani, G

    2013-01-01

    The surface resistance RS of superconductors shows a complex dependence on the external parameters such as temperature, frequency or radio-frequency (RF) field. The Quadrupole Resonator modes of 400, 800 and 1200 MHz allow measurements at actual operating frequencies of superconducting cavities. Niobium films on copper substrates have several advantages over bulk niobium cavities. HIPIMS (High-power impulse magnetron sputtering) is a promising technique to increase the quality and therefore the performance of niobium films. This contribution will introduce CERNs recently developed HIPIMS coating apparatus. Moreover, first results of niobium coated copper samples will be presented, revealing the dominant loss mechanisms.

  4. On the field dependent surface resistance of niobium on copper cavities

    CERN Document Server

    Junginger, Tobias

    2015-01-01

    The surface resistance Rs of superconducting cavities prepared by sputter coating a thin niobium film on a copper substrate increases significantly stronger with the applied RF field compared to cavities of bulk material. A possible cause is that due to the thermal boundary resistance between the copper substrate and the niobium film Rs is enhanced due to global heating of the inner cavity wall. Introducing helium gas in the cavity and measuring its pressure as a function of applied field allowed to conclude that the inner surface of the cavity is heated up by only 60+/-60 mK when Rs increases with Eacc by 100 nOhm. This is more than one order of magnitude less than what one would expect from global heating. Additionally the effect of cooldown speed and low temperature baking have been investigated in the framework of these experiments. It is shown that for current state of the art niobium on copper cavities there is only a detrimental effect of low temperature baking. A fast cooldown results in a lowered Rs.

  5. Copper oxide resistive switching memory for e-textile

    Directory of Open Access Journals (Sweden)

    Jin-Woo Han

    2011-09-01

    Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

  6. Behavior of copper in acidic sulfate solution: Comparison with acidic chloride

    Energy Technology Data Exchange (ETDEWEB)

    Tromans, D.; Silva, J.C. [Univ. of British Columbia, Vancouver, British Columbia (Canada). Dept. of Metals and Materials Engineering

    1997-03-01

    The anodic polarization behavior of copper in a 0.1 M sulfuric acid (H{sub 2}SO{sub 4}) + 1 M sodium sulfate (Na{sub 2}SO{sub 4}) solution (pH = 2.0) was studied at room temperature under quiescent and stirred conditions. The behavior was compared with aqueous equilibria via construction of a potential-vs-pH (E-pH) diagram for the copper-sulfate-water (Cu-SO{sub 4}{sup 2}-H{sub 2}O) system. Interpretation of the behavior was aided by comparison with aqueous equilibria and polarization studies of copper in a 0.2 M hydrochloric acid (HCl) + 1 M sodium chloride (NaCl) solution(pH = 0.8). The initial anodic dissolution region in the acidic sulfate solution exhibited Tafel behavior with a slope consistent with formation of cupric ions (Cu{sup 2+}) whose rate of formation was charge-transfer controlled. At higher potentials, limiting current density (i{sub L}) behavior was observed under E-pH conditions that were consistent with formation of a film of copper sulfate pentahydrate (CuSO{sub 4} {degree} 5H{sub 2}O). Comparison of experimental i{sub L} values with those predicted by mass transport-controlled processes, using estimates of the diffusion layer thickness obtained from the mass transfer-influenced region of apparent Tafel behavior in the acidic chloride solution, were in sufficient agreement to indicate i{sub L} was controlled by the rate of dissolution of the CuSO{sub 4} {degree} 5H{sub 2}O film via transport of Cu{sup 2+} from the film-electrolyte interface into the bulk solution.

  7. AC over-current characteristics of YBCO coated conductor with copper stabilizer layer considering insulation layer

    International Nuclear Information System (INIS)

    Du, H.-I.; Kim, M.-J.; Kim, Y.-J.; Lee, D.-H.; Han, B.-S.; Song, S.-S.

    2010-01-01

    Compared with the first-generation BSCCO wire, the YBCO thin-film wire boasts low material costs and high J c and superior magnetic-field properties, among other strengths. Meanwhile, the previous BSCCO wire material for superconducting cables has been researched on considerably with regard to its post-wire quenching characteristics during the application of an alternating over-current. In this regard, the promising YBCO thin-film wire has yet to be further researched on. Moreover, still lacking is research on the YBCO thin-film wire with insulating layers, which is essential in the manufacture of superconducting cables, along with the testing of the application of an alternating over-current to the wire. In this study, YBCO thin-film wires with copper-stabilizing layers were used in testing alternating over-current application according to the presence or absence of insulating layers and to the thickness of such layers, to examine the post-quenching wire resistance increase and quenching trends. The YBCO thin-film wire with copper-stabilizing layers has a critical temperature of 90 K and a critical current of 85 A rms . Moreover, its current application cycle is 5.5 cycles, and its applied currents are 354, 517, 712, and 915 A peak . These figures enabled the YBCO thin-film wires with copper-stabilizing layers to reach 90, 180, 250, and 300 K, respectively, in this study. These temperatures serve as a relative reference to examine the post-quenching wire properties following the application of an alternating over-current.

  8. XPS studies of short pulse laser interaction with copper

    International Nuclear Information System (INIS)

    Stefanov, P.; Minkovski, N.; Balchev, I.; Avramova, I.; Sabotinov, N.; Marinova, Ts.

    2006-01-01

    The effect of laser ablation on copper foil irradiated by a short 30 ns laser pulse was investigated by X-ray photoelectron spectroscopy. The laser fluence was varied from 8 to 16.5 J/cm 2 and the velocity of the laser beam from 10 to 100 mm/s. This range of laser fluence is characterized by a different intensity of laser ablation. The experiments were done in two kinds of ambient atmosphere: air and argon jet gas. The chemical state and composition of the irradiated copper surface were determined using the modified Auger parameter (α') and O/Cu intensity ratio. The ablation atmosphere was found to influence the size and chemical state of the copper particles deposited from the vapor plume. During irradiation in air atmosphere the copper nanoparticles react with oxygen and water vapor from the air and are deposited in the form of a CuO and Cu(OH) 2 thin film. In argon atmosphere the processed copper surface is oxidized after exposure to air

  9. Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

    Science.gov (United States)

    Lin, Zichao; Sun, Fanghong; Shen, Bin

    2016-11-01

    Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

  10. Effects of specific adsorption of copper (II) ion on charge transfer reaction at the thin film LiMn2O4 electrode/aqueous electrolyte interface

    International Nuclear Information System (INIS)

    Nakayama, N.; Yamada, I.; Huang, Y.; Nozawa, T.; Iriyama, Y.; Abe, T.; Ogumi, Z.

    2009-01-01

    This study investigated the effect of a specific adsorption ion, copper (II) ion, on the kinetics of the charge transfer reaction at a LiMn 2 O 4 thin film electrode/aqueous solution (1 mol dm -3 LiNO 3 ) interface. The zeta potential of LiMn 2 O 4 particles showed a negative value in 1 x 10 -2 mol dm -3 LiNO 3 aqueous solution, while it was measured as positive in the presence of 1 x 10 -2 mol dm -3 Cu(NO 3 ) 2 in the solution. The presence of copper (II) ions in the solution increased the charge transfer resistance, and CV measurement revealed that the lithium insertion/extraction reaction was retarded by the presence of small amount of copper (II) ions. The activation energy for the charge transfer reaction in the solution with Cu(NO 3 ) 2 was estimated to be 35 kJ mol -1 , which was ca. 10 kJ mol -1 larger than that observed in the solution without Cu(NO 3 ) 2 . These results suggest that the interaction between the lithium ion and electrode surface is a factor in the kinetics of charge transfer reaction

  11. Copper corrosion in irradiated environments: The influence of H2O2 on the electrochemistry of copper dissolution in HCl electrolyte

    International Nuclear Information System (INIS)

    Smyrl, W.H.; Bell, B.T.; Atanasoski, R.T.; Glass, R.S.

    1986-12-01

    The anodic dissolution of copper was examined in deaerated, 0.1 M HCl aqueous solution in the presence of H 2 O 2 . Concentrations of H 2 O 2 up to 0.2 M were studied at a rotating copper disk-platinum ring electrode. The open circuit potential (OCP) of copper was found to depend on both peroxide concentration and rotation rate. The OCP shifts towards more positive values with increasing H 2 O 2 concentration (C) and decreasing rotation rate. The current-voltage curves for anodic dissolution of copper were also influenced by the presence of peroxide. The curves recorded with the potential scanned in the positive direction showed the expected 60 mV slope, but the reverse scans showed significant departures. At a given potential scan rate, hysteresis was observed which was larger for higher H 2 O 2 concentrations, lower rotation rates, and more positive anodic potential limits. Monitoring the cuprous ions at the outer Pt ring revealed that there was a complex set of events taking place at the copper surface, including film formation and the appearance of cupric ions. 13 refs., 7 figs

  12. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  13. The influence of a brittle Cr interlayer on the deformation behavior of thin Cu films on flexible substrates: Experiment and model

    International Nuclear Information System (INIS)

    Marx, Vera M.; Toth, Florian; Wiesinger, Andreas; Berger, Julia; Kirchlechner, Christoph; Cordill, Megan J.; Fischer, Franz D.; Rammerstorfer, Franz G.; Dehm, Gerhard

    2015-01-01

    Thin metal films deposited on polymer substrates are used in flexible electronic devices such as flexible displays or printed memories. They are often fabricated as complicated multilayer structures. Understanding the mechanical behavior of the interface between the metal film and the substrate as well as the process of crack formation under global tension is important for producing reliable devices. In the present work, the deformation behavior of copper films (50–200 nm thick), bonded to polyimide directly or via a 10 nm chromium interlayer, is investigated by experimental analysis and computational simulations. The influence of the various copper film thicknesses and the usage of a brittle interlayer on the crack density as well as on the stress magnitude in the copper after saturation of the cracking process are studied with in situ tensile tests in a synchrotron and under an atomic force microscope. From the computational point of view, the evolution of the crack pattern is modeled as a stochastic process via finite element based cohesive zone simulations. Both, experiments and simulations show that the chromium interlayer dominates the deformation behavior. The interlayer forms cracks that induce a stress concentration in the overlying copper film. This behavior is more pronounced in the 50 nm than in the 200 nm copper films

  14. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, Sunetra L.; Latthe, Sanjay S. [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Kappenstein, Charles [University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers-86000 (France); Mukherjee, S.K. [Fuel Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400085, Maharashtra India (India); Rao, A. Venkateswara, E-mail: avrao2012@gmail.com [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India)

    2010-04-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle {approx}156{sup o}) while that on glass it is hydrophilic (contact angle {approx}88{sup o}). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  15. Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

    International Nuclear Information System (INIS)

    Dhere, Sunetra L.; Latthe, Sanjay S.; Kappenstein, Charles; Mukherjee, S.K.; Rao, A. Venkateswara

    2010-01-01

    Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 A. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ∼156 o ) while that on glass it is hydrophilic (contact angle ∼88 o ). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.

  16. Titania seed layers for PZT thin film growth on copper-coated Kapton films

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Volkonskiy, O.; Hubička, Zdeněk; Dejneka, Alexandr; Jastrabík, Lubomír; Adolphi, B.; Bertram, M.; Gerlach, G.

    2009-01-01

    Roč. 108, č. 1 (2009), s. 57-66 ISSN 1058-4587 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KJB100100703 Institutional research plan: CEZ:AV0Z10100522 Keywords : copper coated Kapton * seed layer * seed layer * plasma deposition * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.329, year: 2009

  17. Synthesis of TOPO-capped Nanocrystals of Copper Sulphide from a ...

    African Journals Online (AJOL)

    Nearly mono-dispersed TOPO-capped copper sulphide nanocrystals of ca. 4.5 nm (diameter) have been ... aqueous sols,1 monolayers,2 bilayer lipid membranes,3,4 LB films,5 ... addition of an excess of methanol to the yellow solution a thin.

  18. Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

    Science.gov (United States)

    Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

    2018-02-01

    Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

  19. Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankir, Nurdan Demirci, E-mail: nsankir@etu.edu.tr; Aydin, Erkan; Ugur, Esma; Sankir, Mehmet

    2015-08-15

    Highlights: • Substrate structure of spray pyrolyzed CuInS{sub 2}/In{sub 2}S{sub 3} heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS{sub 2} based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO was studied as a function of the In{sub 2}S{sub 3} buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10{sup 6} times. Electrical measurements under illumination revealed that short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), fill factor (FF) and efficiency (η) of the Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In{sub 2}S{sub 3} layer. The maximum J{sub sc} of 9.20 mA/cm{sup 2}, V{sub oc} of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In{sub 2}S{sub 3} layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed

  20. Microstructure formation via roll-to-roll UV embossing using a flexible mould made from a laminated polymer–copper film

    International Nuclear Information System (INIS)

    Zhong, Z W; Shan, X C

    2012-01-01

    Roll-to-roll large format UV embossing processes aim to revolutionize the manufacturing of functional films, with the ability to process a large area at one time, resulting in high throughput and cost reduction. In this paper, we present the experimental results obtained during the process development for roll-to-roll large format UV embossing. Flexible moulds were fabricated from a hybrid film substrate made of a liquid crystal polymer with clad copper foils laminated on both sides of it. The effective pattern area of the fabricated flexible mould was 400 mm × 300 mm with a minimal feature size of 50 µm. The results show that the roll-to-roll embossing processes are capable of producing micro-scale structures and functional devices over a large area at one time. Large-area roll-to-roll embossing was demonstrated by using the hybrid flexible mould, and micro-features and structures such as micro-channels and dot arrays were replicated on thermoplastic substrates. In addition to its ease and low cost in fabrication, the hybrid flexible moulds demonstrated to have acceptable fidelity and durability. The hybrid flexible mould is a novel solution for large-area embossing. (paper)

  1. Effect of Molecular Structure on Modulation of Passivation Films on Copper Chemical Mechanical Planarization

    Science.gov (United States)

    Mlynarski, Amy

    In order to optimize the chemical mechanical planarization (CMP) process, there is a need to further understand the synergistic relationship between chemical and mechanical parameters to enhance the polishing process. CMP chemistry is very complex, as it contains complexing agents, oxidizing agents, passivating agents, and abrasive particles. This variety of components ensues chaos within the system, which complicates the understanding of the direct impact each component has on the CMP process. In order for there to be efficiency in the polishing process, specifically for copper (Cu) polishing, the chemistry must create a softened passivation layer on the Cu surface that is able to be readily removed by applied mechanical abrasion. Focusing on Cu CMP, the oxidation of Cu to Cu2+ needs to be thoroughly understood in order to probe the formation of creating this ideal passivated layer, which protects recessed Cu regions. The type of film that is formed, the strength of the film, and even the efficiency of film removal will be altered depending on the chemistry of interaction at the Cu surface. This thesis focuses on understanding the working mechanism of the film formation on Cu, depending on the passivating agent added to the system. The different passivating agents used, more specifically benzotriazole (BTA), triazole (TAZ), salicylhydroxamic acid (SHA), and benzimidazole (BIA), have all been known to create a light coat of protection on the recessed metal, providing corrosion resistance. In order to study the differences in these films, many different techniques can be utilized to characterize the films, such as electrochemical scans, referred to as Tafel plots, which will be performed to compare the differences of the films. By altering the temperature within the system, the activation energy for each system can also be determined as another way to characterize the density of the passive film formed. Furthermore, the generation of *OH will be monitored since the

  2. Thermal interaction of molten copper with water

    International Nuclear Information System (INIS)

    Zyszkowski, W.

    1975-01-01

    Experimental work was performed to study the thermal interaction between molten copper particles (in the range of temperature from the copper melting point to about 1800 0 C) and water from about 15-80 0 C. The transient temperatures of the copper particles and water before and during their thermal interaction were measured. The history of the phenomena was filmed by means of a high speed FASTAX camera (to 8000 f/s). Classification of the observed phenomena and description of the heat-transfer modes were derived. One among the phenomena was the thermal explosion. The necessary conditions for the thermal explosion are discussed and their physical interpretation is given. According to the hypothesis proposed, the thermal explosion occurs when the molten metal has the temperature of its solidification and the heat transfer on its surface is sufficiently intensive. The 'sharp-change' of the crystalline structure during the solidification of the molten metal is the cause of the explosion fragmentation. (author)

  3. CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2017-11-01

    Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from an aqueous solution bath containing copper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out  between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of  the applied potential and to determine the most likely suitable electrodeposition potential  for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition  potential. The films have been characterized by techniques such as optical absorption, Xray diffraction  and  atomic  force  microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFM studies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus  Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

  4. Effect of contact angle hysteresis on moving liquid film integrity.

    Science.gov (United States)

    Simon, F. F.; Hsu, Y. Y.

    1972-01-01

    A study was made of the formation and breakdown of a water film moving over solid surfaces (teflon, lucite, stainless steel, and copper). The flow rate associated with film formation was found to be higher than the flow rate at which film breakdown occurred. The difference in the flow rates for film formation and film breakdown was attributed to contact angle hysteresis. Analysis and experiment, which are in good agreement, indicated that film formation and film breakdown are functions of the advancing and receding angles, respectively.

  5. Novel copper (II) alginate hydrogels and their potential for use as anti-bacterial wound dressings

    International Nuclear Information System (INIS)

    Klinkajon, Wimonwan; Supaphol, Pitt

    2014-01-01

    The incorporation of a metal ion, with antimicrobial activity, into an alginate dressing is an attractive approach to minimize infection in a wound. In this work, copper (II) cross-linked alginate hydrogels were successfully prepared using a two-step cross-linking procedure. In the first step, solid alginate films were prepared using a solvent-casting method from soft gels of alginate solutions that had been lightly cross-linked using a copper (II) (Cu 2+ ) sulfate solution. In the second step, the films were further cross-linked in a corresponding Cu 2+ sulfate solution using a dipping method to further improve their dimensional stability. Alginate solution (at 2%w/v) and Cu 2+ sulfate solution (at 2%w/v) in acetate buffer at a low pH provided soft films with excellent swelling behavior. An increase in either Cu 2+ ion concentration or cross-linking time led to hydrogels with more densely-cross-linked networks that limited water absorption. The hydrogels clearly showed antibacterial activity against Escherichia coli, Staphylococcus aureus, methicillin-resistant Staphylococcus aureus (MRSA), Staphylococcus epidermidis and Streptococcus pyogenes, which was proportional to the Cu 2+ ion concentration. Blood coagulation studies showed that the tested copper (II) cross-linked alginate hydrogels had a tendency to coagulate fibrin, and possibly had an effect on pro-thrombotic coagulation and platelet activation. Conclusively, the prepared films are likely candidates as antibacterial wound dressings. (paper)

  6. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  7. Study of decomposition kinetics of volatile β-diketonates of yttrium, barium and copper in flow reactor

    International Nuclear Information System (INIS)

    Devyatykh, G.G.; Gavrishchuk, E.M.; Gibin, A.M.; Dadanov, A.Yu.; Dzyubenko, N.G.; Kaul', A.R.; Nichiporuk, R.V.; Snezhko, N.T.; Ul'yanov, A.A.

    1990-01-01

    Heterogeneous oxidative decomposition of adduct of yttrium acetylacetonate with o-phenanthroline, copper acetylacetonate and barium dipivaloylmethanate in a flow-type reactor was carried out. The basic kinetic characteristics of chemical precipitation processes of films of yttrium, copper and barium oxides, which are components of high-temperature superconductors, were obtained. The values of activation energy of precipitation process of yttrium, copper and barium oxides constituted 76±10, 108±15, 81±12 (t 600 deg C) respectively

  8. Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Pizzocchero, Filippo; Jessen, Bjarke Sørensen

    2014-01-01

    The electrical performance of graphene synthesized by chemical vapor deposition and transferred to insulating surfaces may be compromised by extended defects, including for instance grain boundaries, cracks, wrinkles, and tears. In this study, we experimentally investigate and compare the nano......- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two...... for measurement of the complex conductance response in the frequency range 1-15 terahertz, covering the entire intraband conductance spectrum, and reveals that the conductance response for the graphene grown on single crystalline copper intimately follows the Drude model for a barrier-free conductor. In contrast...

  9. Fabrication of thick superconducting films by decantation

    Directory of Open Access Journals (Sweden)

    Julián Betancourt M.

    1991-07-01

    Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

  10. Influence of copper morphology in forming nucleation seeds for graphene growth.

    Science.gov (United States)

    Han, Gang Hee; Güneş, Fethullah; Bae, Jung Jun; Kim, Eun Sung; Chae, Seung Jin; Shin, Hyeon-Jin; Choi, Jae-Young; Pribat, Didier; Lee, Young Hee

    2011-10-12

    We report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat copper surface was prepared by using a chemical mechanical polishing method. At early growth stage, the density of graphene nucleation seeds from polished Cu film was much lower and the domain sizes of graphene flakes were larger than those from unpolished Cu film. At later growth stage, these domains were stitched together to form monolayer graphene, where the orientation of each domain crystal was unexpectedly not much different from each other. We also found that grain boundaries and intentionally formed scratched area play an important role for nucleation seeds. Although the best monolayer graphene was grown from polished Cu with a low sheet resistance of 260 Ω/sq, a small portion of multilayers were also formed near the impurity particles or locally protruded parts.

  11. Influences of magnetic field on the fractal morphology in copper electrodeposition

    Science.gov (United States)

    Sudibyo; How, M. B.; Aziz, N.

    2018-01-01

    Copper magneto-electrodeposition (MED) is used decrease roughening in the copper electrodeposition process. This technology plays a vital role in electrodeposition process to synthesize metal alloy, thin film, multilayer, nanowires, multilayer nanowires, dot array and nano contacts. The effects of magnetic fields on copper electrodeposition are investigated in terms of variations in the magnetic field strength and the electrolyte concentration. Based on the experimental results, the mere presence of magnetic field would result in a compact deposit. As the magnetic field strength is increased, the deposit grows denser. The increment in concentration also leads to the increase the deposited size. The SEM image analysis showed that the magnetic field has a significant effect on the surface morphology of electrodeposits.

  12. Piezoelectric PZT thin films on flexible copper-coated polymer films

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Volkonskiy, O.; Gerlach, G.; Hubička, Zdeněk; Dejneka, Alexandr; Jastrabík, Lubomír; Kiselev, D.; Bdikin, I.; Kholkin, A.

    636/637, - (2010), s. 392-397 ISSN 0255-5476 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KJB100100703 Institutional research plan: CEZ:AV0Z10100522 Keywords : plasma jet deposition * PZT * kapton® film substrate * piezoresponse force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Microscale and nanoscale hierarchical structured mesh films with superhydrophobic and superoleophilic properties induced by long-chain fatty acids

    International Nuclear Information System (INIS)

    Wang Shutao; Song Yanlin; Jiang Lei

    2007-01-01

    Inspired by the lotus effect, we fabricate new microscale and nanoscale hierarchical structured copper mesh films by a simple electrochemical deposition. After modification of the long-chain fatty acid monolayer, these films show superhydrophobic and superoleophilic properties, which could be used for the effective separation of oil and water. The length of the fatty acid chain strongly influences the surface wettability of as-prepared films. It is confirmed that the cooperative effect of the hierarchical structure of the copper film and the nature of the long-chain fatty acid contribute to this unique surface wettability

  14. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  15. Microstructural control of thin-film diffusion-brazed titanium

    International Nuclear Information System (INIS)

    Wells, R.R.

    1976-01-01

    This study was designed to determine what parameters should be controlled to achieve quality joints of good toughness and high strength in titanium alloys. Emphasis was placed upon studying those parameters which provided tough joints compatible with the titanium base metal being joined. This paper is concerned with thin-film diffusion brazing based upon the eutectic system formed between copper and titanium. In order to control the joint microstructure, the copper diffusion rates and the beta-phase decomposition kinetics were studied. This information was used to produce various types of microstructures in test specimens. These were then evaluated to select the best microstructures for toughness and strength which were compatible with the titanium alloys. Results show that it is possible to accurately control properties of joints produced by thin-film diffusion brazing. This is done by controlling the initial copper content and the time-temperature parameters used in processing. Alloys studied were Ti--8Al--1Mo--1V and Ti--6Al--4V

  16. Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

    Science.gov (United States)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

  17. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    International Nuclear Information System (INIS)

    Bowyer, W.H.

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  18. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    Energy Technology Data Exchange (ETDEWEB)

    Bowyer, W.H. [Meadow End Farm, Farnham (United Kingdom)

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  19. Deposition of copper coatings in a magnetron with liquid target

    Energy Technology Data Exchange (ETDEWEB)

    Tumarkin, A. V., E-mail: sanyahrustal@mail.ru; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  20. Some features of the molecular assembly of copper porphyrazines

    International Nuclear Information System (INIS)

    Valkova, L.; Borovkov, N.; Kopranenkov, V.; Pisani, M.; Bossi, M.; Rustichelli, F.

    2002-01-01

    Floating layers and Langmuir-Blodgett (LB) films of copper porphyrazine (CuPaz) and its tetra-tert-butyl-substituted homologue (CuPaz') are studied. Contrary to phthalocyanines, the monolayer phase in the porphyrazine layers is metastable and transforms directly into the tetralayer one under moderate compression. In diffraction patterns and electronic spectra of the LB films, supramolecular peaks indicating collectivizing of the molecular electron density in direction perpendicular to the main axis of the macrocycle are found. The data obtained indicate the prismatic 3-D supermolecule to be the simplest structural unit of the porphyrazine assembly

  1. Native oxidation of ultra high purity Cu bulk and thin films

    International Nuclear Information System (INIS)

    Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

    2006-01-01

    The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

  2. Composition profiles of several contaminated and cleaned surfaces of gold thick films on copper plates by Auger electron and secondary ion mass spectroscopies

    International Nuclear Information System (INIS)

    Komiya, S.; Mizuno, M.; Narusawa, T.; Maeda, H.; Yoshikawa, M.

    1974-01-01

    Preparation and evaluation of a clean Au film are investigated. Development of a preparation method for obtaining clean surface on a copper shell in the JFT-2a (DIVA) TOKAMAK toroidal vacuum chamber is the aim of the present work. Au films prepared by ion plating and vacuum evaporation have been analysed by a cylindrical mirror Auger electron analyser in combination with a quadrupole mass spectrometer during 2 keV Xe ion bombardment from a sputter ion gun over the whole range of thickness of several microns. Contaminants are found to segregate on the top surface and at the interface. To expose a clean Au surface by the ion bombardment, surface layers within 1000 A had to be removed from the surfaces contaminated by touching with either a naked hand or a nylon glove or covered by a small amount of Ti. Mutual diffusions across the interfaces are also analyzed as a function of the substrate temperature. A Nb sandwich layer inhibites effectively the mutual diffusion. (auth.)

  3. Interaction of copper metallization with rare-earth metals and silicides

    International Nuclear Information System (INIS)

    Molnar, G. L.; Peto, G.; Zsoldos, E.; Horvath, Z. E.

    2001-01-01

    Solid-phase reactions of copper films with underlying gadolinium, erbium, and erbium - silicide layers on Si(100) substrates were investigated. For the phase analysis, x-ray diffraction and cross-sectional transmission electron microscopy were used. In the case of Cu/Gd/Si(100), an orthorhombic GdSi 2 formed, and, at higher temperatures, copper aggregated into islands. Annealed Cu/Er/Si(100) samples resulted in a hexagonal Er 5 Si 3 phase. In the Cu/ErSi 2-x /Si system, the copper catalyzes the transformation of the highly oriented hexagonal ErSi 2-x phase into hexagonal Er 5 Si 3 . Diverse phase developments of the samples with Gd and Er are based on reactivity differences of the two rare-earth metals. [copyright] 2001 American Institute of Physics

  4. Linking strain anisotropy and plasticity in copper metallization

    International Nuclear Information System (INIS)

    Murray, Conal E.; Jordan-Sweet, Jean; Priyadarshini, Deepika; Nguyen, Son

    2015-01-01

    The elastic anisotropy of copper leads to significant variation in the x-ray elastic constants (XEC), which link diffraction-based strain measurements to stress. An accurate depiction of the mechanical response in copper thin films requires a determination of an appropriate grain interaction model that lies between Voigt and Reuss limits. It is shown that the associated XEC weighting fraction, x*, between these limits provides a metric by which strain anisotropy can be quantified. Experimental values of x*, as determined by a linear regression scheme of diffraction data collected from multiple reflections, reveal the degree of strain anisotropy and its dependence on plastic deformation induced during in-situ and ex-situ thermal treatments

  5. A novel compound cleaning solution for benzotriazole removal after copper CMP

    International Nuclear Information System (INIS)

    Gu Zhangbing; Liu Yuling; Gao Baohong; Wang Chenwei; Deng Haiwen

    2015-01-01

    After the chemical mechanical planarization (CMP) process, the copper surface is contaminated by a mass of particles (e.g. silica) and organic residues (e.g. benzotriazole), which could do great harm to the integrated circuit, so post-CMP cleaning is essential. In particular, benzotriazole (BTA) forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper. So an effective cleaning solution is needed to remove BTA from the copper surface. In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA: one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution. The cleaning solution is formed of alkaline chelating agent (FA/O II type), which is used to remove BTA, and a surfactant (FA/O I type), which is used as a corrosion inhibitor. BTA removal is characterized by contact angle measurements and electrochemical techniques. The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques. The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface. (paper)

  6. The effects of grooming on a copper ablative coating: a six year study.

    Science.gov (United States)

    Tribou, Melissa; Swain, Geoffrey

    2017-07-01

    More than 90% of US Navy Ships are coated with copper ablative paint. These ships may spend long periods of time pier-side, which makes them vulnerable to fouling. Hull grooming has been proposed as a means of maintaining the coatings in an operational condition. This study investigated the effect of grooming on a copper ablative coating exposed statically for six years. Grooming was performed weekly or monthly with controls left ungroomed. The fouling community was visually assessed, dry film thickness measurements were taken to monitor coating loss, and the copper leaching rates were measured. It was found that weekly and monthly groomed surfaces reduced fouling, and the ungroomed surfaces became fully fouled. Coating loss was similar for weekly, monthly and ungroomed surfaces. The results suggest that grooming is a viable method for maintaining copper ablative coatings in a fouling-free condition without adverse increases in the total copper output.

  7. Effect of copper content on the properties of electroless Ni–Cu–P coatings prepared on magnesium alloys

    International Nuclear Information System (INIS)

    Liu, Junjun; Wang, Xudong; Tian, Zhiyong; Yuan, Ming; Ma, Xijuan

    2015-01-01

    Highlights: • Electroless Ni–Cu–P coatings were obtained on ZK61M magnesium alloys. • The crystallinity and compactness increases with the increasing of copper content. • The introduction of copper element in the coatings contributes to the formation of passivation film. • The coatings with higher corrosion resistance were obtained from the solution with a higher CuSO 4 concentration. - Abstract: The Ni–Cu–P coatings were obtained by electroless plating method on ZK61M magnesium alloys. The effect of copper content on the properties of electroless Ni–Cu–P coatings on magnesium alloys was further studied. The coatings surface and cross-section morphologies were observed with scanning electron microscope. The crystal structure and corrosion resistance of Ni–Cu–P coatings were evaluated by X-ray diffractometer and electrochemical tests. The experimental results showed that the Ni–Cu–P coatings were uniform and compact, and the corrosion resistance of these coatings was superior to Ni–P coatings owing to the introduction of copper. The crystallinity and compactness of the Ni–Cu–P coatings gradually enhanced with the increasing of copper content in the coatings. The introduction of copper element in the Ni–Cu–P coatings contributes to the formation of passivation film. The Ni–Cu–P coatings with higher corrosion resistance were obtained from the solution with a higher CuSO 4 concentration.

  8. Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Naoki [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)]. E-mail: naokis@e.kuicr.kyoto-u.ac.jp; Harada, Youichiro [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Terashima, Takahito [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kanda, Ryoko [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Takano, Mikio [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

    2005-05-15

    Fifty nanometer-thick metal-doped strontium titanate (M:STO, M = La and V) films deposited epitaxially on single crystalline STO substrates were characterized in comparison with indium tin oxide (ITO) covered glasses, to check their applicability to optically transparent anode materials for organic optoelectronic devices. M:STO, in particular V:STO, films turned out to have distinct surface flatness, needfully low electric resistivities and notably large work functions. While their optical transmittances are lower than those of ITOs at this moment, we suggest that M:STO films have a potential to take the place of ITO films. Further, we have observed energy level alignments for copper phthalocyanine thin films at the interface of V:STO.

  9. Electrochemical preparation of photoelectrochemically active CuI thin films from room temperature ionic liquid

    International Nuclear Information System (INIS)

    Huang, Hsin-Yi; Chien, Da-Jean; Huang, Genin-Gary; Chen, Po-Yu

    2012-01-01

    Highlights: ► CuI film can be formed by anodization of Cu in ionic liquid containing iodide. ► Coordinating strength of anion in ionic liquid determine the formation of CuI. ► Photocurrent of the CuI film can be observed in aqueous solution and in ionic liquid. ► Cu layer coated on conductive substrates can be converted to CuI. - Abstract: Cuprous iodide (CuI) thin films with photoelectrochemical activity were prepared by anodizing copper wire or copper-electrodeposited tungsten wire in the room temperature ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate (BMI-PF 6 RTIL) containing N-butyl-N-methylpyrrolidinium iodide (BMP-I). A copper coating was formed on the tungsten wire by potentiostatic electrodeposition in BMP-dicyanamide (BMP-DCA) RTIL containing copper chloride (CuCl). The CuI films formed using this method were compact, fine-grained and exhibited good adhesion. The characteristic diffraction signals of CuI were observed by powder X-ray diffractometry (XRD). X-ray photoelectron spectroscopy (XPS) also confirmed the formation of a CuI compound semiconductor. The CuI films demonstrated an apparent and stable photocurrent under white light illumination in aqueous solutions and in a RTIL. This method has enabled the electrochemical formation of CuI from a RTIL for the first time, and the first observation of a photocurrent produced from CuI in a RTIL. The coordinating strength of the anions of the RTIL is the key to the successful formation of the CuI thin film. If the coordinating strength of the anions of the RTIL is too strong, no CuI formation is observed.

  10. Bifunctional sensor of pentachlorophenol and copper ions based on nanostructured hybrid films of humic acid and exfoliated layered double hydroxide via a facile layer-by-layer assembly

    International Nuclear Information System (INIS)

    Yuan, Shuang; Peng, Dinghua; Hu, Xianluo; Gong, Jingming

    2013-01-01

    Graphical abstract: -- Highlights: •A new highly sensitive bifunctional electrochemical sensor developed. •As-prepared sensor fabricated by alternate assembly of HA and exfoliated LDH nanosheets. •Such a newly designed sensor combining the individual properties of HA and LDH nanosheets. •Simultaneous determination of pentachlorophenol and copper ions achieved. •Practical applications demonstrated in water samples. -- Abstract: A new, highly sensitive bifunctional electrochemical sensor for the simultaneous determination of pentachlorophenol (PCP) and copper ions (Cu 2+ ) has been developed, where organic–inorganic hybrid ultrathin films were fabricated by alternate assembly of humic acid (HA) and exfoliated Mg–Al-layered double hydroxide (LDH) nanosheets onto ITO substrates via a layer-by-layer (LBL) approach. The multilayer films were then characterized by means of UV–vis spectrometry, scanning electron microscopy (SEM), and atomic force microscope (AFM). These films were found to have a relatively smooth surface with almost equal amounts of HA incorporated in each cycle. Its electrochemical performance was systematically investigated. Our results demonstrate that such a newly designed (LDH/HA) n multilayer films, combining the individual properties of HA (dual recognition ability for organic herbicides and metal ions) together with LDH nanosheets (a rigid inorganic matrix), can be applied to the simultaneous analysis of PCP and Cu(II) without interference from each other. The LBL assembled nanoarchitectures were further investigated by X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (IR), which provides insight for bifunctional sensing behavior. Under the optimized conditions, the detection limit was found to be as low as 0.4 nM PCP, well below the guideline value of PCP in drinking water (3.7 nM) set by the United States Environmental Protection Agency (U.S. EPA), and 2.0 nM Cu 2+ , much below the guideline value (2.0 mg L −1

  11. Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

    Science.gov (United States)

    Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

  12. Patterned self-assembled monolayers of alkanethiols on copper nanomembranes by submerged laser ablation

    Science.gov (United States)

    Rhinow, Daniel; Hampp, Norbert A.

    2012-06-01

    Self-assembled monolayers (SAMs) of alkanethiols are major building blocks for nanotechnology. SAMs provide a functional interface between electrodes and biomolecules, which makes them attractive for biochip fabrication. Although gold has emerged as a standard, copper has several advantages, such as compatibility with semiconductors. However, as copper is easily oxidized in air, patterning SAMs on copper is a challenging task. In this work we demonstrate that submerged laser ablation (SLAB) is well-suited for this purpose, as thiols are exchanged in-situ, avoiding air exposition. Using different types of ω-substituted alkanethiols we show that alkanethiol SAMs on copper surfaces can be patterned using SLAB. The resulting patterns were analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Both methods indicate that the intense laser beam promotes the exchange of thiols at the copper surface. Furthermore, we present a procedure for the production of free-standing copper nanomembranes, oxidation-protected by alkanethiol SAMs. Incubation of copper-coated mica in alkanethiol solutions leads to SAM formation on both surfaces of the copper film due to intercalation of the organic molecules. Corrosion-protected copper nanomembranes were floated onto water, transferred to electron microscopy grids, and subsequently analyzed by electron energy loss spectroscopy (EELS).

  13. Atomistic simulation of femtosecond laser pulse interactions with a copper film: Effect of dependency of penetration depth and reflectivity on electron temperature

    Science.gov (United States)

    Amouye Foumani, A.; Niknam, A. R.

    2018-01-01

    The response of copper films to irradiation with laser pulses of fluences in the range of 100-6000 J/m2 is simulated by using a modified combination of a two-temperature model (TTM) and molecular dynamics (MD). In this model, the dependency of the pulse penetration depth and the reflectivity of the target on electron temperature are taken into account. Also, the temperature-dependent electron-phonon coupling factor, electron thermal conductivity, and electron heat capacity are used in the simulations. Based on this model, the dependence of the integral reflectivity on pulse fluence, the changes in the film thickness, and the evolution of density and electron and lattice temperatures are obtained. Moreover, snapshots that show the melting and disintegration processes are presented. The disintegration starts at a fluence of 4200 J/m2, which corresponds with an absorbed fluence of 616 J/m2. The calculated values of integral reflectivity are in good agreement with the experimental data. The inclusion of such temperature-dependent absorption models in the TTM-MD method would facilitate the comparison of experimental data with simulation results.

  14. Particles Size and Conductivity Study of P-Type Copper (I) Iodide (CuI) Thin Film for Solid State Dye-Sensitized Solar Cells

    International Nuclear Information System (INIS)

    Zainun, A R; Mamat, M H; Noor, U M; Rusop, M

    2011-01-01

    Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor.

  15. Particle size and conductivity study of P-type copper (I) iodide (CuI) thin film for solid state dye sensitized solar cells

    International Nuclear Information System (INIS)

    Ayib Rosdi Zainun; Mohd Hafiz Mamat; Rusop, M.

    2009-01-01

    Full text: Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05 M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor. (author)

  16. Effects of crystallographic texture on stress-migration resistance in copper thin films

    International Nuclear Information System (INIS)

    Koike, J.; Wada, M.; Sanada, M.; Maruyama, K.

    2002-01-01

    The crystallographic texture of heat-treated Cu thin films and its effects on stress-migration resistance were studied as a function of film thickness within a range of 50-900 nm. All as-deposited films had (111) texture. After heat treatment at 723 K, texture transition from (111) to (100) was observed in films of thickness greater than 300 nm. The (111) texture films after heat treatment showed severe stress migration; in contrast, the (100) texture films showed no noticeable stress migration. The observed stress-migration resistance in the (100) texture films can be attributed to the absence of twins and to lower thermal stress as compared with the (111) texture films

  17. Impedimetric Thiourea Sensing in Copper Electrorefining Bath based on DC Magnetron Sputtered Nanosilver as Highly Uniform Transducer

    International Nuclear Information System (INIS)

    Mozaffari, S.A.; Amoli, H. Salar; Simorgh, S.; Rahmanian, R.

    2015-01-01

    Highlights: • Fabrication of a novel disposable impedimetric thiourea sensor based on nanostructured Ag film transducer. • Exploiting sputtering as a high-tech method for preparation of highly uniform nanostructured Ag film. • A wonderful combination of nanostructured Ag film and carbon paper substrate as remarkably stable and reproducible sensor for thiourea detection in copper electrorefining bath. • Application of impedimetric assessment for thiourea monitoring due to its rapidity, sensitivity, and repeatability. - Abstract: Highly uniform sputtered nanostructured silver (Nano-Ag) film on the conductive carbon paper (CP) substrate (Nano-Ag/CP) was applied as a novel approach for thiourea (TU) measurement in copper electrorefining bath. Nano-Ag film was achieved by direct current (DC) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface structure of Nano-Ag film by field emission-scanning electron microscopy (FE-SEM), exhibits uniform Nano-Ag film as an effective transducer for TU sensing. Step by step monitoring of Nano-Ag/CP electrode fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated Nano-Ag/CP electrode was used for TU determination using EIS assessment. The impedimetric results show high sensitivity for TU sensing within 2.0–250 ppm.

  18. Effect of sulfide on the corrosion behavior of pure copper under anaerobic condition and possibility of super long lifetime for copper overpacks

    International Nuclear Information System (INIS)

    Taniguchi, Naoki; Naitou, Morimasa; Kawasaki, Manabu

    2007-03-01

    In general, copper is thermodynamically stable under anaerobic condition, so that corrosion due to water reduction can not be occurred on copper. In the presence of sulfide, however, this property of immunity to corrosion is lost and corrosion as copper sulfide is occurred. Therefore, it is necessary to understand the effect of sulfide on the corrosion behavior of copper for using the copper as a material for overpacks. In this study, immersion tests and stress corrosion cracking tests were carried out using synthetic seawater containing sodium sulfide. Based on the experimental results, the possibility of super long lifetime for copper overpacks was discussed. The results were summarized as follows; 1) As the results of the immersion tests of copper in buffer material for 2 years, the corrosion rates became large with increase in the concentration of sodium sulfide. The corrosion rates of copper in sodium sulfide of 0.001M, 0.005M and 0.1M were estimated to be 0.55μm/y, 2.2μm/y, 15μm/y respectively. 2) Corrosion product film with black or dark-gray was formed on the surface of copper specimens, and it was identified as Cu 2 S(Chalcocite) by the X-ray diffraction. 3) As the results of stress corrosion cracking experiments by means of slow strain rate technique, copper has little susceptibility to crack initiation for the specimen of the experiment under 0.001M-Na 2 S condition. Obvious cracks were observed for the specimens of the experiment over 0.005M Na 2 S condition. 4) According to the results of immersion tests and stress corrosion cracking tests, copper overpacks have a potential to accomplish super long lifetime far over 1000 years owing to very low corrosion rate and no stress corrosion cracking if the sulfide concentration in repository environment is promised to be less than 0.001M. (author)

  19. Effect of Cu Content on TiN-Cu Nanocomposite Film Properties: Structural and Hardness Studies

    Directory of Open Access Journals (Sweden)

    M. M. Larijani

    2013-06-01

    Full Text Available Titanium nitride-Copper (TiN-Cu nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of the deposited films was studied using atomic force microscopy. Film hardness was estimated by a triboscope nanoindentation system. However, X-ray photoelectron spectroscopy analysis was performed to study the surface chemical bonding states. It was found that addition of soft Cu phase above 2 at.% to TiN film drastically decreased the film hardness from 30 to 2.8 Gpa due to lubricant effect of segregated copper particles. X-ray photoelectron spectroscopy results showed that Cu and TiN phases grew separately. In our case,the formation of a solid solution or chemical bonding between Cu and Ti was rejected.

  20. The impact of hydrogen and oxidizing impurities in chemical vapor deposition of graphene on copper

    Science.gov (United States)

    Choubak, Saman

    Graphene, the single-atom layer of carbon, has attracted scientists and technologists due to its outstanding physical and opto/electronic properties. The use of graphene in practical applications requires a reliable and cost-effective method to produce large area graphene films with low defects and controlled thicknesses. Direct growth of graphene using chemical vapor deposition (CVD) on copper, in which carbonaceous gaseous species react with the metal substrate in the presence of hydrogen at high temperatures (850-1100° C), led to high coverage of high quality graphene, opening up a promising future for methods of this type and a large step towards commercial realization of graphene products. The present thesis deals with the synthesis of graphene via low pressure CVD (LP-CVD) on copper catalyst using methane as the carbon precursor. The focus is mainly on the determination of the role of hydrogen and oxidizing impurities during graphene formation with an ultimate purpose: to elucidate a viable and reproducible method for the production of high quality graphene films compatible with industrial manufacturing processes. The role of molecular hydrogen in graphene CVD is explored in the first part of the thesis. Few studies claimed that molecular hydrogen etches graphene films on copper by conducting annealing experiments. On the other hand, we speculated that this graphene etching reaction is due to the presence of trace amount of oxygen in the furnace atmosphere. Thus, we took another approach and designed systematic annealing experiments to investigate the role of hydrogen in the etching reaction of graphene on copper foils. No evidence of graphene etching on copper was observed when purified ultra high purity (UHP) hydrogen was used at 825 °C and 500 mTorr. Nevertheless, graphene films exposed to the unpurified UHP hydrogen were etched due to the presence of oxidizing impurities. Our results show that hydrogen is not responsible for graphene etching reaction

  1. Plasmonic Films Can Easily Be Better: Rules and Recipes

    Science.gov (United States)

    2015-01-01

    High-quality materials are critical for advances in plasmonics, especially as researchers now investigate quantum effects at the limit of single surface plasmons or exploit ultraviolet- or CMOS-compatible metals such as aluminum or copper. Unfortunately, due to inexperience with deposition methods, many plasmonics researchers deposit metals under the wrong conditions, severely limiting performance unnecessarily. This is then compounded as others follow their published procedures. In this perspective, we describe simple rules collected from the surface-science literature that allow high-quality plasmonic films of aluminum, copper, gold, and silver to be easily deposited with commonly available equipment (a thermal evaporator). Recipes are also provided so that films with optimal optical properties can be routinely obtained. PMID:25950012

  2. Conformational order of n-dodecanethiol and n-dodecaneselenol monolayers on polycrystalline copper investigated by PM-IRRAS and SFG spectroscopy

    Science.gov (United States)

    Fonder, G.; Cecchet, F.; Peremans, A.; Thiry, P. A.; Delhalle, J.; Mekhalif, Z.

    2009-08-01

    Self-assembled monolayers (SAMs) of n-dodecanethiol (C 12H 25SH) and n-dodecaneselenol (C 12H 25SeH) on polycrystalline copper have been elaborated with the purpose of achieving densely packed and crystalline-like assemblies. By combining the surface sensitivity of polarization modulation infrared reflection absorption spectroscopy (PM-IRRAS) and sum-frequency generation spectroscopy (SFG), the effect of the self-assembly time (15 min, 30 min, 1 h, 2 h and 24 h) on the formation of n-dodecanethiol and n-dodecaneselenol monolayers on untreated and electrochemically reduced polycrystalline copper has been investigated. On electrochemically reduced copper, PM-IRRAS spectroscopy shows that both molecules are able to form well organized layers. SFG spectroscopy indicates that the C 12H 25SeH SAMs are slightly better ordered than those achieved with C 12H 25SH. On untreated copper, the two molecules lead to different film organizations. Both PM-IRRAS and SFG indicate that C 12H 25SH SAMs are of the same film quality as those obtained on electrochemically reduced copper. On the contrary, C 12H 25SeH monolayers are invariably poorly organized at the molecular level.

  3. Adhesion of rhodium films on metallic substrates

    International Nuclear Information System (INIS)

    Marot, L.; Covarel, G.; Tuilier, M.-H.; Steiner, R.; Oelhafen, P.

    2008-01-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength

  4. Adhesion of rhodium films on metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2008-09-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

  5. Non-destructive electrochemical graphene transfer from reusable thin-film catalysts

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Jessen, Bjarke Sørensen; Whelan, Patrick Rebsdorf

    2015-01-01

    We demonstrate an electrochemical method - which we term oxidative decoupling transfer (ODT) - for transferring chemical vapor deposited graphene from physically deposited copper catalyst layers. This copper oxidation-based transfer technique is generally applicable to copper surfaces...... - up to 100 mm diameter films are demonstrated here - and exhibit a low Raman D:G peak ratio and a homogenous and continuous distribution of sheet conductance mapped by THz time-domain spectroscopy. By applying a fixed potential of -0.4 V vs. an Ag/AgCl reference electrode - significantly below...

  6. Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

    2017-02-15

    Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

  7. Synergistic Effect of L-Methionine and KI on Copper Corrosion Inhibition in HNO3 (1M

    Directory of Open Access Journals (Sweden)

    Amel SEDIK

    2014-05-01

    Full Text Available L-Methionine (L-Met efficiency as a non-toxic corrosion inhibitor for copper in 1M HNO3 has been studied by using electrochemical impedance spectroscopy (EIS and potentiodynamic polarization. Copper corrosion rate significant decrease was observed in the presence of L-Met at 10-4M. The Obtained Results from potentiodynamic polarization and impedance measurements are in good agreement. L-Methionine adsorption on copper surface follows Langmuir isotherm. L-Met free energy adsorption on copper (-30 KJ mol-1 reveals an inhibition strong physical adsorption on copper surface. In order to evaluate the L-Met effect, L-Met and iodide ion’synergistic effect was used to prevent copper corrosion in nitric acid. It was found that inhibitor efficiency (IE reached 98.27 % in 1M solution containing 10-4M L-Met and 10- 3 M KI. The synergistic effect was attributed to iodide ions adsorption on copper surface, which facilitated the L-Met adsorption and an inhibitive film formation.

  8. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

  9. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  10. Structure of the Copper–Enriched Layer Introduced by Anodic Oxidation of Copper-Containing Aluminium Alloy

    International Nuclear Information System (INIS)

    Hashimoto, T.; Zhou, X.; Skeldon, P.; Thompson, G.E.

    2015-01-01

    This paper investigates the structure of the copper–enriched layer formed at the alloy/anodic film interface during anodizing of Al–2 wt.% Cu binary alloy using transmission electron microscopy. It was revealed that θ′ phase was formed within the copper–enriched layer. For the copper–enriched layer formed on {1 0 0} aluminum planes, the interface between the aluminum matrix and the θ′ phase within the copper-enriched layer is coherent. For the copper–enriched layer formed on {1 1 0} and {1 1 1} aluminum planes, the interfaces between the aluminum matrix and the θ′ phase within the copper-enriched layer are semi-coherent or incoherent. The interfacial coherency influences the formation of oxygen gas bubbles within the resultant anodic films.

  11. Synthesis of copper nanoparticles in a fluoropolymer matrix by annealing in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Safonov, Alexey, E-mail: safonov@itp.nsc.ru [Kutateladze Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090, Novosibirsk (Russian Federation); Sulyaeva, Veronica [Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentyev Ave. 3, 630090, Novosibirsk (Russian Federation); Timoshenko, Nikolay; Starinskiy, Sergey [Kutateladze Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090, Novosibirsk (Russian Federation)

    2017-07-12

    In this paper, a method for synthesizing copper nanoparticles in a fluoropolymer matrix is proposed which prevents the reduction in the plasmonic properties due to the oxidation of the metal. The basic idea of the proposed method of nanoparticle synthesis is to anneal of thin metal film coated with a thin layer of fluoropolymer. The morphology and optical properties of the resulting composites were determined. The optical properties remained unchanged after several months of storage under standard conditions. - Highlights: • The copper-fluoropolymer composites are obtained by a combination of GJD and HWCVD. • The annealing of thin Cu film covered with fluoropolymer leads to formation of NPs. • The dilution of the localized surface plasmon resonance due to oxidation was analyzed. • The plasmonic properties of the Cu NPs are saved in the fluoropolymer matrix. • The fluoropolymer matrix prevents oxidation of metal NPs.

  12. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  13. Deposition and characterization of CuInSe2 thin films

    International Nuclear Information System (INIS)

    Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

    1988-01-01

    CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

  14. CdS thin films prepared by continuous wave Nd:YAG laser

    Science.gov (United States)

    Wang, H.; Tenpas, Eric W.; Vuong, Khanh D.; Williams, James A.; Schuesselbauer, E.; Bernstein, R.; Fagan, J. G.; Wang, Xing W.

    1995-08-01

    We report new results on continuous wave Nd:YAG laser deposition of cadmium sulfide thin films. Substrates were soda-lime silicate glass, silica glass, silicon, and copper coated formvar sheets. As deposited films were mixtures of cubic and hexagonal phases, with two different grain sizes. As revealed by SEM micrographs, films had smooth surface morphology. As revealed by TEM analysis, grain sizes were extremely small.

  15. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    International Nuclear Information System (INIS)

    Chung, Wan-Ho; Hwang, Hyun-Jun; Kim, Hak-Sung

    2015-01-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved

  16. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Wan-Ho; Hwang, Hyun-Jun [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Kim, Hak-Sung, E-mail: kima@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved.

  17. POLYPYRROLE COATED CELLULOSIC SUBSTRATE MODIFIED BY COPPER OXIDE AS ELECTRODE FOR NITRATE ELECTROREDUCTION

    OpenAIRE

    A. HAMAM; D. OUKIL; A. DIB; H. HAMMACHE; L. MAKHLOUFI; B. SAIDANI

    2015-01-01

    The aim of this work is to synthesize polypyrrole (PPy) films on nonconducting cellulosic substrate and modified by copper oxide particles for use in the nitrate electroreduction process. Firstly, the chemical polymerization of polypyrrole onto cellulosic substrate is conducted by using FeCl3 as an oxidant and pyrrole as monomer. The thickness and topography of the different PPy films obtained were estimated using a profilometer apparatus. The electrochemical reactivity of the obtained electr...

  18. Silver Films with Hierarchical Chirality.

    Science.gov (United States)

    Ma, Liguo; Cao, Yuanyuan; Duan, Yingying; Han, Lu; Che, Shunai

    2017-07-17

    Physical fabrication of chiral metallic films usually results in singular or large-sized chirality, restricting the optical asymmetric responses to long electromagnetic wavelengths. The chiral molecule-induced formation of silver films prepared chemically on a copper substrate through a redox reaction is presented. Three levels of chirality were identified: primary twisted nanoflakes with atomic crystal lattices, secondary helical stacking of these nanoflakes to form nanoplates, and tertiary micrometer-sized circinates consisting of chiral arranged nanoplates. The chiral Ag films exhibited multiple plasmonic absorption- and scattering-based optical activities at UV/Vis wavelengths based on their hierarchical chirality. The Ag films showed chiral selectivity for amino acids in catalytic electrochemical reactions, which originated from their primary atomic crystal lattices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Copper and Copper Proteins in Parkinson's Disease

    Science.gov (United States)

    Rivera-Mancia, Susana; Diaz-Ruiz, Araceli; Tristan-Lopez, Luis; Rios, Camilo

    2014-01-01

    Copper is a transition metal that has been linked to pathological and beneficial effects in neurodegenerative diseases. In Parkinson's disease, free copper is related to increased oxidative stress, alpha-synuclein oligomerization, and Lewy body formation. Decreased copper along with increased iron has been found in substantia nigra and caudate nucleus of Parkinson's disease patients. Copper influences iron content in the brain through ferroxidase ceruloplasmin activity; therefore decreased protein-bound copper in brain may enhance iron accumulation and the associated oxidative stress. The function of other copper-binding proteins such as Cu/Zn-SOD and metallothioneins is also beneficial to prevent neurodegeneration. Copper may regulate neurotransmission since it is released after neuronal stimulus and the metal is able to modulate the function of NMDA and GABA A receptors. Some of the proteins involved in copper transport are the transporters CTR1, ATP7A, and ATP7B and the chaperone ATOX1. There is limited information about the role of those biomolecules in the pathophysiology of Parkinson's disease; for instance, it is known that CTR1 is decreased in substantia nigra pars compacta in Parkinson's disease and that a mutation in ATP7B could be associated with Parkinson's disease. Regarding copper-related therapies, copper supplementation can represent a plausible alternative, while copper chelation may even aggravate the pathology. PMID:24672633

  20. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    Science.gov (United States)

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  1. Separation of copper-64 from copper phthalocyanine

    International Nuclear Information System (INIS)

    Battaglin, R.I.M.

    1979-01-01

    The separation of copper-64 from irradiated copper phthalocyanine by Szilard-Chalmers effect is studied. Two methods of separation are used: one of them is based on the dissolution of the irradiated dry compound in concentrated sulfuric acid following its precipitation in water. In the other one the compound is irradiated with water in paste form following treatment with water and hydrochloric acid. The influence of the crystal form of the copper phthalocyanine on the separation yield of copper-64 is shown. Preliminary tests using the ionic exchange technique for purification and changing of copper-64 sulfate to chloride form are carried out. The specific activity using the spectrophotometric technique, after the determination of the copper concentration in solution of copper-64, is calculated. (Author) [pt

  2. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  3. Electronic properties and orbital-filling mechanism in Rb-intercalated copper phthalocyanine

    NARCIS (Netherlands)

    Evangelista, F.; Gotter, R.; Mahne, N.; Nannarone, S.; Ruocco, A.; Rudolf, P.

    2008-01-01

    The evolution of the electronic properties of a thin film of copper phthalocyanine deposited on Al(100) and progressively intercalated with rubidium atoms was followed by photoemission and X-ray absorption spectroscopies. Electron donation from the Rb atoms to the C32H16N8Cu molecules results in the

  4. High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, E.S.; Su, M.; Howng, W.

    1992-01-01

    rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

  5. Mechanical, structural and thermal properties of Ag-Cu and ZnO reinforced polylactide nanocomposite films.

    Science.gov (United States)

    Ahmed, Jasim; Arfat, Yasir Ali; Castro-Aguirre, Edgar; Auras, Rafael

    2016-05-01

    Plasticized polylactic acid (PLA) based nanocomposite films were prepared by incorporating polyethylene glycol (PEG) and two selected nanoparticles (NPs) [silver-copper (Ag-Cu) alloy (film matrix. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  7. Development of biodegradable metaloxide/polymer nanocomposite films based on poly-ε-caprolactone and terephthalic acid.

    Science.gov (United States)

    Varaprasad, Kokkarachedu; Pariguana, Manuel; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Sadiku, Emmanuel Rotimi

    2017-01-01

    The present investigation describes the development of metal-oxide polymer nanocomposite films from biodegradable poly-ε-caprolactone, disposed poly(ethylene terephthalate) oil bottles monomer and zinc oxide-copper oxide nanoparticles. The terephthalic acid and zinc oxide-copper oxide nanoparticles were synthesized by using a temperature-dependent precipitation technique and double precipitation method, respectively. The terephthalic acid synthesized was confirmed by FTIR analysis and furthermore, it was characterized by thermal analysis. The as-prepared CuO-ZnO nanoparticles structure was confirmed by XRD analysis and its morphology was analyzed by SEM/EDS and TEM. Furthermore, the metal-oxide polymer nanocomposite films have excellent mechanical properties, with tensile strength and modulus better than pure films. The metal-oxide polymer nanocomposite films that were successfully developed show a relatively brighter colour when compared to CuO film. These new metal-oxide polymer nanocomposite films can replace many non-degradable plastics. The new metal-oxide polymer nanocomposite films developed are envisaged to be suitable for use in industrial and domestic packaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. The role of surface preparation in corrosion protection of copper with nanometer-thick ALD alumina coatings

    Energy Technology Data Exchange (ETDEWEB)

    Mirhashemihaghighi, Shadi; Światowska, Jolanta [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Maurice, Vincent, E-mail: vincent.maurice@chimie-paristech.fr [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Seyeux, Antoine; Klein, Lorena H. [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Salmi, Emma; Ritala, Mikko [Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland); Marcus, Philippe [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France)

    2016-11-30

    Highlights: • 10–50 nm thick alumina coatings were grown on copper by atomic layer deposition. • Surface smoothening by substrate annealing was studied as pre-deposition treatment. • Corrosion protection is promoted by pre-treatment for 10 nm but not for thicker films. • Local adhesion failure is assigned to the stresses accumulated in the thicker films. • Surface smoothening decreases the interfacial strength bearing the film stresses. - Abstract: Surface smoothening by substrate annealing was studied as a pre-treatment for improving the corrosion protection provided to copper by 10, 20 and 50 nm thick alumina coatings deposited by atomic layer deposition. The interplay between substrate surface state and deposited film thickness for controlling the corrosion protection provided by ultrathin barrier films is demonstrated. Pre-annealing at 750 °C heals out the dispersed surface heterogeneities left by electropolishing and reduces the surface roughness to less than 2 nm independently of the deposited film thickness. For 10 nm coatings, substrate surface smoothening promotes the corrosion resistance. However, for 20 and 50 nm coatings, it is detrimental to the corrosion protection due to local detachment of the deposited films. The weaker adherence of the thicker coatings is assigned to the stresses accumulated in the films with increasing deposited thickness. Healing out the local heterogeneities on the substrate surface diminishes the interfacial strength that is bearing the stresses of the deposited films, thereby increasing adhesion failure for the thicker films. Pitting corrosion occurs at the local sites of adhesion failure. Intergranular corrosion occurs at the initially well coated substrate grain boundaries because of the growth of a more defective and permeable coating at grain boundaries.

  9. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  10. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  11. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.

    Science.gov (United States)

    Wong, Terence K S; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K

    2016-04-07

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu₂O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of Al x Ga 1- x O onto thermal Cu₂O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu₂O nanopowder. CuO/Cu₂O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu₄O₃/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10 -2 %.

  12. Copper nanofiber-networked cobalt oxide composites for high performance Li-ion batteries

    Directory of Open Access Journals (Sweden)

    Shim Hee-Sang

    2011-01-01

    Full Text Available Abstract We prepared a composite electrode structure consisting of copper nanofiber-networked cobalt oxide (CuNFs@CoO x . The copper nanofibers (CuNFs were fabricated on a substrate with formation of a network structure, which may have potential for improving electron percolation and retarding film deformation during the discharging/charging process over the electroactive cobalt oxide. Compared to bare CoO x thin-film (CoO x TF electrodes, the CuNFs@CoO x electrodes exhibited a significant enhancement of rate performance by at least six-fold at an input current density of 3C-rate. Such enhanced Li-ion storage performance may be associated with modified electrode structure at the nanoscale, improved charge transfer, and facile stress relaxation from the embedded CuNF network. Consequently, the CuNFs@CoO x composite structure demonstrated here can be used as a promising high-performance electrode for Li-ion batteries.

  13. Characterization of the microwave properties of superconducting films with high transition temperature

    International Nuclear Information System (INIS)

    Richter, W.; Klinger, M.; Daginnus, M.

    1989-01-01

    In the meantime high quality Y-Ba-Cu-O thin films were produced. The latest results show, that its surface resistances are clearly lower than the values of copper, measured at a temperature of 77 K and up to frequencies of 86 GHz. This examination had the aim to produce high-T c films with a simple and low cost method, to use them as transmission lines at frequencies up to 30 GHz and above. A screen printing process was investigated, and high-T c thick films were fabricated on several substrates. Superconducting transition temperatures up to 80 K (dc zero resistance) were obtained. The films showed no complete magnetic shielding, and its microwave surface resistances were clearly higher than that ones for copper. The a. c. Josephson effect was proved with granular structures of bulk Y-Ba-Cu-O material and with screen printed thick films. Because of its high surface resistances, these thick films are unsuitable for the use as transmission lines at high frequencies. However, the a.c. Josephson effect can be used to manufacture microwave sensors in bulk Y-Ba-Cu-O and screen printed films of Y-Ba-Cu-O, which have a favourable geometric structure. (orig.) With 16 refs., 2 tabs., 24 figs [de

  14. Effects of Chlorine Ions on the Dissolution Mechanism of Cu Thin Film in Phosphoric Acid Based Solution.

    Science.gov (United States)

    Seo, Bo-Hyun; Kim, Byoung O; Seo, Jong Hyun

    2015-10-01

    The dissolution mechanisms of Cu thin film were studied with a focus on the effect of chlorine ion concentrations in mixture solutions of phosphoric and nitric acid. The dissolution behaviors of Cu thin film were investigated by using potentio-dynamic curves and impedance spectroscopy with varying chlorine ion concentrations. The copper dissolution rate decreased and as a result of this change, CuCl, salt films formed on the Cu surface in the presence of chlorine ions in the mixture solution. Such behavior was interpreted as being competitive adsorption between chlorine and nitrate ions on the copper surface. The passive oxide film on the Cu surface was further investigated in detail using X-ray photoelectron spectroscopy in both the absence and presence of differing chlorine ion concentrations.

  15. Binary copper oxide semiconductors: From materials towards devices

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, B.K.; Polity, A.; Reppin, D.; Becker, M.; Hering, P.; Klar, P.J.; Sander, T.; Reindl, C.; Benz, J.; Eickhoff, M.; Heiliger, C.; Heinemann, M. [1. Physics Institute, Justus-Liebig University of Giessen (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics (IEP), Otto-von-Guericke University Magdeburg (Germany); Shokovets, S. [Institute of Physics, Ilmenau University of Technology (Germany); Mueller, C.; Ronning, C. [Institute of Solid State Physics, Friedrich Schiller University Jena (Germany)

    2012-08-15

    Copper-oxide compound semiconductors provide a unique possibility to tune the optical and electronic properties from insulating to metallic conduction, from bandgap energies of 2.1 eV to the infrared at 1.40 eV, i.e., right into the middle of the efficiency maximum for solar-cell applications. Three distinctly different phases, Cu{sub 2}O, Cu{sub 4}O{sub 3}, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper. Their material properties as far as they are known by experiment or predicted by theory are reviewed. They are supplemented by new experimental results from thin-film growth and characterization, both will be critically discussed and summarized. With respect to devices the focus is on solar-cell performances based on Cu{sub 2}O. It is demonstrated by photoelectron spectroscopy (XPS) that the heterojunction system p-Cu{sub 2}O/n-AlGaN is much more promising for the application as efficient solar cells than that of p-Cu{sub 2}O/n-ZnO heterojunction devices that have been favored up to now. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Copper and copper-nickel alloys as zebra mussel antifoulants

    Energy Technology Data Exchange (ETDEWEB)

    Dormon, J.M.; Cottrell, C.M.; Allen, D.G.; Ackerman, J.D.; Spelt, J.K. [Univ. of Toronto, Ontario (Canada)

    1996-04-01

    Copper has been used in the marine environment for decades as cladding on ships and pipes to prevent biofouling by marine mussels (Mytilus edulis L.). This motivated the present investigation into the possibility of using copper to prevent biofouling in freshwater by both zebra mussels and quagga mussels (Dreissena polymorpha and D. bugensis collectively referred to as zebra mussels). Copper and copper alloy sheet proved to be highly effective in preventing biofouling by zebra mussels over a three-year period. Further studies were conducted with copper and copper-nickel mesh (lattice of expanded metal) and screen (woven wire with a smaller hole size), which reduced the amount of copper used. Copper screen was also found to be strongly biofouling-resistant with respect to zebra mussels, while copper mesh reduced zebra mussel biofouling in comparison to controls, but did not prevent it entirely. Preliminary investigations into the mechanism of copper antifouling, using galvanic couples, indicated that the release of copper ions from the surface of the exposed metal into the surrounding water is directly or indirectly responsible for the biofouling resistance of copper.

  17. Copper-carbon and aluminum-carbon composites fabricated by powder metallurgy processes

    International Nuclear Information System (INIS)

    Silvain, Jean-François; Veillère, Amélie; Lu, Yongfeng

    2014-01-01

    The increase in both power and packing densities in power electronic devices has led to an increase in the market demand for effective heat-dissipating materials, with high thermal conductivity and thermal- expansion coefficient compatible with chip materials still ensuring the reliability of the power modules. In this context, metal matrix composites: carbon fibers and diamond-reinforced copper and aluminum matrix composites among them are considered very promising as a next generation of thermal-management materials in power electronic packages. These composites exhibit enhanced thermal properties compared to pure copper combined with lower density. This article presents the fabrication techniques of copper/carbon fibers and copper/diamond and aluminum/carbon fibers composite films by powder metallurgy and hot pressing. The thermal analyses clearly indicate that interfacial treatments are required in these composites to achieve high thermomechanical properties. Interfaces (through novel chemical and processing methods), when selected carefully and processed properly will form the right chemical/mechanical link between metal and carbon, enhancing all the desired thermal properties while minimizing the deleterious effect.

  18. Fabrication and applications of copper sulfide (CuS) nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Shamraiz, Umair, E-mail: umairshamraiz@gmail.com; Hussain, Raja Azadar, E-mail: hussainazadar@gamil.com; Badshah, Amin, E-mail: aminbadshah@yahoo.com

    2016-06-15

    This review article presents different fabrication procedures (under the headlines of solvothermal routes, aerosol methods, solution methods and thermolysis), and applications (photocatalytic degradation, ablation of cancer cells, electrode material in lithium ion batteries and in gas sensing, organic solar cells, field emission properties, super capacitor applications, photoelectrochemical performance of QDSCs, photocatalytic reduction of organic pollutants, electrochemical bio sensing, enhanced PEC characteristics of pre-annealed CuS film electrodes) of copper sulfide (Covellite). - Highlights: • This review article presents the synthesis and applications of copper sulfide. • CuS has been used over the years for different applications in nanoscience. • Different synthetic protocols are followed for their preparation which help in the possible modifications in the morphology of CuS.

  19. Adhesion and adhesion changes at the copper metal-(acrylonitrile-butadiene-styrene) polymer interface

    NARCIS (Netherlands)

    Kisin, S.; Varst, van der P.G.T.; With, de G.

    2007-01-01

    It is known that the adhesive strength of metallic films on polymer substrates often changes in the course of time. To study this effect in more detail, the adhesion energy of sputtered and galvanically strengthened copper coatings on acrylonitrile–butadiene–styrene polymer substrate was determined

  20. CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2017-11-01

    Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from anaqueous solution bath containingcopper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of the applied potential and to determine the most likely suitable electrodeposition potential for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition potential. The films have been characterized by techniques such as optical absorption, X-ray diffraction and atomic force microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFMstudies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

  1. Copper corrosion in irradiated environments. The influence of H2O2 on the electrochemistry of copper dissolution in HC1 electrolyte

    International Nuclear Information System (INIS)

    Smyrl, W.H.; Bell, B.T.; Atanasoski, R.T.; Glass, R.S.

    1987-01-01

    The anodic dissolution of copper has been examined in deaerated, 0.1 M HCl aqueous solution in the presence of H 2 O 2 . Concentrations of H 2 O 2 up to 0.2 M were studied at a rotating copper disk-platinum ring electrode. The open circuit potential (OCP) of copper was found to depend on both peroxide concentration and rotation rate. The OCP shifts towards more positive values with increasing H 2 O 2 concentration (C) and decreasing rotation rate (Omega). The dependence of OCP on (C/Omega/sup 1/2/) was the same as for oxygenated solutions reported earlier [1], at small values of (C/Omega/sup 1/2/). At higher values of (C/Omega/sup 1/2/), departure from the expected behavior was observed. The current-voltage curves for anodic dissolution of copper were also influenced by the presence of peroxide. The curves recorded with the potential scanned in the positive direction showed the expected 60 mV slope, but the reverse scans showed significant departures. At a given potential scan rate, hysteresis was observed which was larger for higher H 2 O 2 concentrations, lower rotation rates, and more positive anodic potential limits. Monitoring the cuprous ions at the outer Pt ring revealed that there was a complex set of events taking place at the copper surface, including film formation and the appearance of cupric ions. 13 references, 7 figures

  2. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  3. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  4. Copper and Copper Proteins in Parkinson’s Disease

    Directory of Open Access Journals (Sweden)

    Sergio Montes

    2014-01-01

    Full Text Available Copper is a transition metal that has been linked to pathological and beneficial effects in neurodegenerative diseases. In Parkinson’s disease, free copper is related to increased oxidative stress, alpha-synuclein oligomerization, and Lewy body formation. Decreased copper along with increased iron has been found in substantia nigra and caudate nucleus of Parkinson’s disease patients. Copper influences iron content in the brain through ferroxidase ceruloplasmin activity; therefore decreased protein-bound copper in brain may enhance iron accumulation and the associated oxidative stress. The function of other copper-binding proteins such as Cu/Zn-SOD and metallothioneins is also beneficial to prevent neurodegeneration. Copper may regulate neurotransmission since it is released after neuronal stimulus and the metal is able to modulate the function of NMDA and GABA A receptors. Some of the proteins involved in copper transport are the transporters CTR1, ATP7A, and ATP7B and the chaperone ATOX1. There is limited information about the role of those biomolecules in the pathophysiology of Parkinson’s disease; for instance, it is known that CTR1 is decreased in substantia nigra pars compacta in Parkinson’s disease and that a mutation in ATP7B could be associated with Parkinson’s disease. Regarding copper-related therapies, copper supplementation can represent a plausible alternative, while copper chelation may even aggravate the pathology.

  5. Measurement of labile copper in wine by medium exchange stripping potentiometry utilising screen printed carbon electrodes.

    Science.gov (United States)

    Clark, Andrew C; Kontoudakis, Nikolaos; Barril, Celia; Schmidtke, Leigh M; Scollary, Geoffrey R

    2016-07-01

    The presence of copper in wine is known to impact the reductive, oxidative and colloidal stability of wine, and techniques enabling measurement of different forms of copper in wine are of particular interest in understanding these spoilage processes. Electrochemical stripping techniques developed to date require significant pretreatment of wine, potentially disturbing the copper binding equilibria. A thin mercury film on a screen printed carbon electrode was utilised in a flow system for the direct analysis of labile copper in red and white wine by constant current stripping potentiometry with medium exchange. Under the optimised conditions, including an enrichment time of 500s and constant current of 1.0μA, the response range was linear from 0.015 to 0.200mg/L. The analysis of 52 red and white wines showed that this technique generally provided lower labile copper concentrations than reported for batch measurement by related techniques. Studies in a model system and in finished wines showed that the copper sulfide was not measured as labile copper, and that loss of hydrogen sulfide via volatilisation induced an increase in labile copper within the model wine system. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. a Time-Resolved X-Ray Scattering Study of the Ordering Kinetics in COPPER(3)-GOLD

    Science.gov (United States)

    Shannon, Robert Francis, Jr.

    Time-resolved x-ray scattering has been used to study ordering kinetics in single crystal bulk Cu _3Au, as well as in sputtered and molecular beam epitaxy grown films. After annealing at high temperatures the sample is rapidly quenched to fixed temperatures below the order-disorder transition temperature. The development of order is monitored in real time using scattering techniques. The bulk sample clearly showed three regimes: nucleation, ordering, and coarsening. The anisotropic superlattice peaks that reflect the domains structure are investigated in connection with the ordering kinetics. The line shape of the scattering function exhibits a crossover from gaussian to lorentzian-squared as the system goes from the ordering regime to the coarsening regime. Coarsening in Cu_3Au is consistent with curvature driven growth. Domain coarsening in stoichiometric sputtered films is also consistent with curvature driven growth. However, coarsening in copper rich films proceeds much more slowly. The results suggest the extra copper affects the ordering kinetics in the same way diffusive impurities would, resulting in a logarithmic like time dependence. The M.B.E. films show a slowing of the growth at late times. The 4500A film starts out with curvature driven growth but then continuously slows down as the domains grow. The 710A film shows an interesting temperature dependence for the growth, in such a way that at temperatures close to the transition, the domain growth almost freezes at late times. The dominate factor is probably strain, all of the trends for slower growth are consistent with greater strain. The dimensionality in the M.B.E. film systems is considered. The scaling in the 4500A and 710A films is clearly three dimensional. However, the dimension of the scaling in the 260A film is unclear.

  7. Studies on Gas Sensing Performance of Pure and Surface Modified SrTiO3 Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    V. B. Gaikwad

    2009-08-01

    Full Text Available Strontium Titanate (SrTiO3 (ST was prepared mechanochemically from Sr(OH2 and TiO2. XRD confirms the Perovskite phase of material. Thick films of ST were prepared by screen-printing technique. The gas sensing performances of thick films were tested for various gases. It showed maximum sensitivity to CO gas at 350 oC for 100 ppm gas concentration. To improve the sensitivity and selectivity of the film towards a particular gas, ST thick films were surface modified by dipping them in a solution of nano copper for different intervals of time. These surface modified ST films showed larger sensitivity to H2S gas (100 ppm at 300 oC than pure ST film. A systematic study, of sensing performance of the sensor, indicates the key role-played by the nano copper species on the surface .The sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

  8. Copper carrier protein in copper toxic sheep liver

    Energy Technology Data Exchange (ETDEWEB)

    Harris, A L; Dean, P D.G.

    1973-01-01

    The livers of copper-toxic sheep have been analyzed by gel electrophoresis followed by staining the gels for copper with diethyldithiocarbamate and for protein with amido schwartz. These gels were compared with similar gels obtained from the livers of normal and copper-deficient animals. The copper-toxic livers contained an extra protein band which possessed relatively weakly bound copper. Possible origins of this protein are discussed. 8 references, 1 figure, 2 tables.

  9. Self-healing coatings based on halloysite clay polymer composites for protection of copper alloys.

    Science.gov (United States)

    Abdullayev, Elshad; Abbasov, Vagif; Tursunbayeva, Asel; Portnov, Vasiliy; Ibrahimov, Hikmat; Mukhtarova, Gulbaniz; Lvov, Yuri

    2013-05-22

    Halloysite clay nanotubes loaded with corrosion inhibitors benzotriazole (BTA), 2-mercaptobenzimidazole (MBI), and 2-mercaptobenzothiazole (MBT) were used as additives in self-healing composite paint coating of copper. These inhibitors form protective films on the metal surface and mitigate corrosion. Mechanisms involved in the film formation have been studied with optical and electron microscopy, UV-vis spectrometry, and adhesivity tests. Efficiency of the halloysite lumen loading ascended in the order of BTA halloysite formulations have shown the best protection. Inhibitors were kept in the tubes buried in polymeric paint layer for a long time and release was enhanced in the coating defects exposed to humid media with 20-50 h, sufficient for formation of protective layer. Anticorrosive performance of the halloysite-based composite acrylic and polyurethane coatings have been demonstrated for 110-copper alloy strips exposed to 0.5 M aqueous NaCl for 6 months.

  10. Influence of Cu–Ti thin film surface properties on antimicrobial activity and viability of living cells

    International Nuclear Information System (INIS)

    Wojcieszak, Damian; Kaczmarek, Danuta; Antosiak, Aleksandra; Mazur, Michal; Rybak, Zbigniew; Rusak, Agnieszka; Osekowska, Malgorzata; Poniedzialek, Agata; Gamian, Andrzej; Szponar, Bogumila

    2015-01-01

    The paper describes properties of thin-film coatings based on copper and titanium. Thin films were prepared by co-sputtering of Cu and Ti targets in argon plasma. Deposited coatings consist of 90 at.% of Cu and 10 at.% of Ti. Characterization of the film was made on the basis of investigations of microstructure and physicochemical properties of the surface. Methods such as scanning electron microscopy, x-ray microanalysis, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, optical profilometry and wettability measurements were used to assess the properties of deposited thin films. An impact of Cu–Ti coating on the growth of selected bacteria and viability of the living cells (line L929, NCTC clone 929) was described in relation to the structure, surface state and wettability of the film. It was found that as-deposited films were amorphous. However, in such surroundings the nanocrystalline grains of 10–15 nm and 25–35 nm size were present. High surface active area with a roughness of 8.9 nm, had an effect on receiving relatively high water contact angle value (74.1°). Such wettability may promote cell adhesion and result in an increase of the probability of copper ion transfer from the film surface into the cell. Thin films revealed bactericidal and fungicidal effects even in short term-contact. High activity of prepared films was directly related to high amount (ca. 51 %) of copper ions at 1+ state as x-ray photoelectron spectroscopy results have shown. - Graphical abstract: Bactericidal and fungicidal effects of time contact with surface of Cu–Ti thin films. - Highlights: • Antimicrobial activity and cytotoxic effect (viability of L929 cell line) of metallic Cu–Ti films • Thin films were prepared by co-sputtering of Cu and Ti. • As-deposited Cu–Ti films were amorphous and homogenous. • Bactericidal and fungicidal effects even in short term-contact were observed

  11. Influence of Cu–Ti thin film surface properties on antimicrobial activity and viability of living cells

    Energy Technology Data Exchange (ETDEWEB)

    Wojcieszak, Damian, E-mail: damian.wojcieszak@pwr.edu.pl [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Kaczmarek, Danuta [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Antosiak, Aleksandra [Institute of Immunology and Experimental Therapy, Polish Academy of Sciences, Rudolfa Weigla 12, 53-114 Wrocław (Poland); Mazur, Michal [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Rybak, Zbigniew; Rusak, Agnieszka; Osekowska, Malgorzata [Department for Experimental Surgery and Biomaterials Research, Wroclaw Medical University, Poniatowskiego 2, 50-326 Wroclaw (Poland); Poniedzialek, Agata [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Gamian, Andrzej; Szponar, Bogumila [Institute of Immunology and Experimental Therapy, Polish Academy of Sciences, Rudolfa Weigla 12, 53-114 Wrocław (Poland)

    2015-11-01

    The paper describes properties of thin-film coatings based on copper and titanium. Thin films were prepared by co-sputtering of Cu and Ti targets in argon plasma. Deposited coatings consist of 90 at.% of Cu and 10 at.% of Ti. Characterization of the film was made on the basis of investigations of microstructure and physicochemical properties of the surface. Methods such as scanning electron microscopy, x-ray microanalysis, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, optical profilometry and wettability measurements were used to assess the properties of deposited thin films. An impact of Cu–Ti coating on the growth of selected bacteria and viability of the living cells (line L929, NCTC clone 929) was described in relation to the structure, surface state and wettability of the film. It was found that as-deposited films were amorphous. However, in such surroundings the nanocrystalline grains of 10–15 nm and 25–35 nm size were present. High surface active area with a roughness of 8.9 nm, had an effect on receiving relatively high water contact angle value (74.1°). Such wettability may promote cell adhesion and result in an increase of the probability of copper ion transfer from the film surface into the cell. Thin films revealed bactericidal and fungicidal effects even in short term-contact. High activity of prepared films was directly related to high amount (ca. 51 %) of copper ions at 1+ state as x-ray photoelectron spectroscopy results have shown. - Graphical abstract: Bactericidal and fungicidal effects of time contact with surface of Cu–Ti thin films. - Highlights: • Antimicrobial activity and cytotoxic effect (viability of L929 cell line) of metallic Cu–Ti films • Thin films were prepared by co-sputtering of Cu and Ti. • As-deposited Cu–Ti films were amorphous and homogenous. • Bactericidal and fungicidal effects even in short term-contact were observed.

  12. Solution processing of YBa2Cu3O7-x thin films

    International Nuclear Information System (INIS)

    Singhal, A.; Paranthaman, M.; Specht, E.D.; Hunt, R.D.; Beach, D.B.; Martin, P.M.; Lee, D.F.

    1997-12-01

    The aim of this work was to develop a non-vacuum chemical deposition technique for YBa 2 Cu 3 O 7-x (YBCO) coated conductors on rolling-assisted biaxially textured substrates (RABiTS). The authors have chosen the metal-organic decomposition (MOD) and sol-gel precursor routes to grow textured YBCO films. In the MOD process, yttrium 2-ethylhexonate, barium neodecanoate, copper 2-ethylhexonate and toluene were used as the starting reagents. YBCO films processed by the MOD method on SrTiO 3 (100) single crystal substrates were consisted of c and a-axis oriented materials. These films also contained some amount of the random phase. The c and a-axis oriented materials were epitaxial on SrTiO 3 substrates. Films have a T c,onset of 89K and the best superconducting transition temperature of 63K. Films pyrolyzed at 525 C and subsequently annealed at 780 C in a p(O 2 ) of 3.5 x 10 -4 atm contained YBCO phase predominantly in a-axis orientation. In the sol-gel route, yttrium-isopropoxide, barium metal, copper methoxide and 2-methoxyethanol were used as the starting reagents. Sol-gel YBCO films on SrTiO 3 substrates were epitaxial and c-axis oriented

  13. Photochemical synthesis of copper nanoparticles incorporated in poly(vinyl pyrrolidone)

    International Nuclear Information System (INIS)

    Giuffrida, Salvatore; Costanzo, Lucia L.; Ventimiglia, Giorgio; Bongiorno, Corrado

    2008-01-01

    The effect of the presence of poly(vinyl pyrrolidone) (PVP) on the copper nanoparticle formation, obtained by UV irradiation of ethanol solution of Cu(acac) 2 (acac = 2,4-pentanedionato), was investigated. At 254 nm, in conditions of light completely absorbed by complex, the PVP exhibited protective and stabilizing effects, as shown by the formation of a colloidal copper solution and by a block of the heterogeneous process, which leads to thin film formation on the quartz walls. The colloidal solution was tested for several months by plasmon position and it was found that it remained unaltered in inert atmosphere, but returned to the starting complex on contact with air. The PVP ability to control the particle size was investigated by carrying out photoreduction sensitized by Hacac at 254 and 300 nm, in the presence of PVP concentration varying from 0 to 0.2 M. In this range it was possible to obtain copper nanoparticles of dimensions decreasing from 30 to 4 nm. Besides this, the PVP (0.005-0.05 M) role as sensitizer was investigated by irradiating solutions of Cu(acac) 2 at 300 nm which is an inactive wavelength for copper reduction by direct light absorption. It was found that the PVP was an efficient sensitizer of the copper photoreduction. The nanoparticles were characterized by plasmon band, Trasmission Electron Microscope (TEM) as well as Dynamic Light Scattering (DSL) analysis. The overall results evidence the advantages of the PVP use in the nanoparticle copper formation through the photochemical technique such as the exclusive formation of colloidal copper, their size control, stable colloidal solution and complete return to the starting complex.

  14. CVD synthesis of HTSC films using volatile coordination compounds

    International Nuclear Information System (INIS)

    Volkov, S.V.; Zub, V.Y.; Balakshina, O.N.; Mazurenko, E.A.

    1995-01-01

    Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c ∼10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed. (orig.)

  15. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Terence K. S. Wong

    2016-04-01

    Full Text Available The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O, cupric oxide (CuO and copper (III oxide (Cu4O3 is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.

  16. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Science.gov (United States)

    Wong, Terence K. S.; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K.

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%. PMID:28773398

  17. Study of the Effect of Sulfide Ions on the Corrosion Resistance of Copper for Use in Containers for High Level radioactive waste

    International Nuclear Information System (INIS)

    Urbal Espinoza, Andrea Elizabeth

    2000-01-01

    The work 'Study of sulfide ion on Resisting Copper Corrosion' is part of the project 'Study of Copper Corrosion in Underground Water Solution in Reducer Conditions', which the Department of Nuclear Materials, Chilean Nuclear Energy Commission is carrying out. These activities are important because of this metal's potential applications for handling and controlling contaminating wastes that are a product of using nuclear energy in electric generation. Copper has important mechanical properties and is also resistant to disintegration in corrosive environments, which is an important condition for its use in manufacturing of high level radioactive waste containers. This work is based on a study of cyclic volta metric curves, anodic and cathodic polarization and potentiostatic measurements, with which the potential range, sweep speed system, electrochemical reactions involved and corrosion speed could be defined. The microstructural characterization of the films was done by Scanning Electron Microscopy (SEM), and the chemical composition and surface contamination of the film were studied by photoelectron spectroscopy induced by X- rays (XPS), and the crystalline structure by X- ray Diffraction (XRD). Some noticeable results, such as low potentials (less than .7 V, in cathode direction) and high concentrations of sulfur make the formation of copper sulfides (I) and (II) possible; unlike the potential over .6 V, in anodic direction, where copper oxides (I) and (II) are formed, but they are inhibited by high sulfur concentrations. The morphological study of the copper surface has shown that the film that forms is more abundant and granular at higher cathodic potentials, forming small pits on the surface. The effect of the presence of sulfur ions is minimal, and the metal's deterioration is inhibited by other ions in the groundwater. The corrosion rate is greater as the sulfur concentration rises, and a time period of 20,000 years can be predicted for the total corrosion of

  18. Growth and properties of CuInS2 thin films

    International Nuclear Information System (INIS)

    Agarwal, M.K.; Patel, P.D.; Chaki, Sunil H.; Lakshminarayana, D.

    1998-01-01

    Single phase copper indium disulphide (CuInS 2 ) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be n-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a temperature of 523 K at a molybdenum source temperature of 1873 K. (author)

  19. Copper and copper-nickel-alloys - An overview

    Energy Technology Data Exchange (ETDEWEB)

    Klassert, Anton; Tikana, Ladji [Deutsches Kupferinstitut e.V. Am Bonneshof 5, 40474 Duesseldorf (Germany)

    2004-07-01

    With the increasing level of industrialization the demand for and the number of copper alloys rose in an uninterrupted way. Today, the copper alloys take an important position amongst metallic materials due to the large variety of their technological properties and applications. Nowadays there exist over 3.000 standardized alloys. Copper takes the third place of all metals with a worldwide consumption of over 15 millions tons per year, following only to steel and aluminum. In a modern industrial society we meet copper in all ranges of the life (electro-technology, building and construction industry, mechanical engineering, automotive, chemistry, offshore, marine engineering, medical applications and others.). Copper is the first metal customized by humanity. Its name is attributed to the island Cyprus, which supplied in the antiquity copper to Greece, Rome and the other Mediterranean countries. The Romans called it 'ore from Cyprus' (aes cyprium), later cuprum. Copper deposited occasionally also dapper and could be processed in the recent stone age simply by hammering. Already in early historical time copper alloys with 20 to 50 percent tin was used for the production of mirrors because of their high reflecting power. Although the elementary nickel is an element discovered only recently from a historical perspective, its application in alloys - without any knowledge of the alloy composition - occurred at least throughout the last 2.000 years. The oldest copper-nickel coin originates from the time around 235 B.C.. Only around 1800 AD nickel was isolated as a metallic element. In particular in the sea and offshore technology copper nickel alloys found a broad field of applications in piping systems and for valves and armatures. The excellent combination of characteristics like corrosion resistance, erosion stability and bio-fouling resistance with excellent mechanical strength are at the basis of this success. An experience of many decades supports the use

  20. Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

    Science.gov (United States)

    Kalaivani, A.; Senguttuvan, G.; Kannan, R.

    2018-03-01

    Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

  1. CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

    International Nuclear Information System (INIS)

    Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  2. Deposition of thin films by retardation of an isotope separator beam

    International Nuclear Information System (INIS)

    Colligon, J.S.; Grant, W.A.; Williams, J.S.; Lawson, R.P.W.

    1976-01-01

    An ion optical lens system capable of retarding and focusing a mass-analysed ion beam, produced in the University of Salford isotope separator, from an energy of 20 keV to 50-60 eV is described. Using this system it is technically feasible to deposit spectroscopically pure ions of all species onto a substrate to produce thin film for devices and junctions. Preliminary investigations of the technique have been carried out using lead and copper ions which were deposited onto silicon single-crystal substrates. These ions were selected because their high mass relative to silicon allowed analyses of the deposited films by low-angle Rutherford backscattering of 2 MeV He ions; the single-crystal silicon substrate enabled the extent of damage due to unretarded neutral particles to be estimated from channelling data. Results for lead films showed that films less than 150 A in thickness were discontinuous and scanning electron microscopy confirmed their 'island' structure. For thicker deposits, of order 600 A, the films were continuous. Results are also presented for copper-lead sandwich layers produced by successive depositions. Channelling experiments indicated that the neutral component was less than 5% of the total ion-beam intensity. Investigations of the spatial distribution of the lead films indicated a non-uniformity which, it is suggested, arises from a fault in the retardation lens design. (author)

  3. The effect of boron implantation on the corrosion behaviour, microhardness and contact resistance of copper and silver surfaces

    International Nuclear Information System (INIS)

    Henriksen, O.; Johnson, E.; Johansen, A.; Sarholt-Kristensen, L.

    1986-01-01

    In order to investigate the influence of boron implantation on the corrosion resistance of electrical contacts, a number of pure copper, pure silver and copper edge connector samples have been implanted with boron (40 keV) to fluences of 5.10 20 m -2 and 2.10 21 m -2 . Atmospheric corrosion tests of the implanted species were conducted using the following exposures: H 2 S (12.5 ppm, 4 days), SO 2 (25 ppm, 21 days), saltfog (5% NaCl, 1 day), moist air (93% RH, 56 days), and hot/dry air (70 C, 56 days). The boron implantations lead to a significant reduction in the sulphidation rate of copper and silver. The corrosive film formed during exposure in H 2 S and SO 2 atmospheres is confined to pitted regions on the implanted areas, while a thick and relatively uniform film formation is observed on the unimplanted samples. The corrosion resistance of copper and silver in saltfog atmosphere is somewhat improved by boron implantation, whilst the results from exposures to moist air or hot/dry air are inconclusive. The improved corrosion behaviour is accompanied by an increase in the contact resistance and in the microhardness of the implanted samples. (orig.)

  4. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

    Science.gov (United States)

    Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

    2017-07-01

    Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

  5. Simultaneous Patterning of Independent Metal/Metal Oxide Multi-Layer Films Using Two-Tone Photo-Acid Generating Compound Systems

    Directory of Open Access Journals (Sweden)

    Hideo Honma

    2012-10-01

    Full Text Available (1 The photo-induced solubility and positive-tone direct photo-patterning of iron, copper and lanthanides chelated with 4-(2-nitrobenzyloxycarbonylcatechol (NBOC or 4-(6-nitroveratryloxycarbonylcatechol (NVOC was investigated. Photo-patterning of iron, copper, cerium, samarium, europium, terbium, dysprosium, holmium, erbium and lutetium complexes was accomplished. Continuous films were formed by the pyrolysis of metal complex films at 500 °C. (2 Based on the difference in the photo-reaction excitation wavelength profile of NBOC and NVOC complexes, a short and simple method for simultaneous micro-patterning of two independent films on each side of a transparent glass substrate was developed. Using the developed procedure, indium tin oxide and/or titanium oxide films were formed on each side of a quartz substrate without use of resist or etching.

  6. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  7. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-01-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  8. Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

    Science.gov (United States)

    Qu, Zilian; Meng, Yonggang; Zhao, Qian

    2015-03-01

    This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

  9. Advanced Copper Composites Against Copper-Tolerant Xanthomonas perforans and Tomato Bacterial Spot.

    Science.gov (United States)

    Strayer-Scherer, A; Liao, Y Y; Young, M; Ritchie, L; Vallad, G E; Santra, S; Freeman, J H; Clark, D; Jones, J B; Paret, M L

    2018-02-01

    Bacterial spot, caused by Xanthomonas spp., is a widespread and damaging bacterial disease of tomato (Solanum lycopersicum). For disease management, growers rely on copper bactericides, which are often ineffective due to the presence of copper-tolerant Xanthomonas strains. This study evaluated the antibacterial activity of the new copper composites core-shell copper (CS-Cu), multivalent copper (MV-Cu), and fixed quaternary ammonium copper (FQ-Cu) as potential alternatives to commercially available micron-sized copper bactericides for controlling copper-tolerant Xanthomonas perforans. In vitro, metallic copper from CS-Cu and FQ-Cu at 100 μg/ml killed the copper-tolerant X. perforans strain within 1 h of exposure. In contrast, none of the micron-sized copper rates (100 to 1,000 μg/ml) from Kocide 3000 significantly reduced copper-tolerant X. perforans populations after 48 h of exposure compared with the water control (P copper-based treatments killed the copper-sensitive X. perforans strain within 1 h. Greenhouse studies demonstrated that all copper composites significantly reduced bacterial spot disease severity when compared with copper-mancozeb and water controls (P copper composites significantly reduced disease severity when compared with water controls, using 80% less metallic copper in comparison with copper-mancozeb in field studies (P copper composites have the potential to manage copper-tolerant X. perforans and tomato bacterial spot.

  10. Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

    Directory of Open Access Journals (Sweden)

    Arun Augustin

    2016-09-01

    Full Text Available Copper is the only one solid metal registered by the US Environmental Protection Agency as an antimicrobial touch surface. In touch surface applications, wettability of the surface has high significance. The killing rate of the harmful microbes depends on the wetting of pathogenic solution. Compared to the bulk copper, coated one on aluminum has the advantage of economic competitiveness and the possibility of manufacturing complex shapes. In the present work, the copper coating on the aluminum surface has successfully carried out by electrodeposition using non cyanide alkaline bath. To ensure good adhesion strength, the substrate has been pre-zincated prior to copper deposition. The coating current density is one of the important parameters which determine the nucleation density of the copper on the substrate. To understand the effect of current density on wettability, the coating has done at different current densities in the range of 3 A dm−2 to 9 A dm−2 for fixed time interval. The grain size has been measured from TEM micrographs and showed that as current density increases, grain size reduces from 62 nm to 35 nm. Since the grain size reduces, grain boundary volume has increases. As a result the value of strain energy (calculated by Williamson–Hall method has increased. The density of nodular morphology observed in SEM analysis has been increased with coating current density. Further, wettability studies with respect to double distilled water on the electrodeposited copper coatings which are coated at different current densities are carried out. At higher current density the coating is more wettable by water because at these conditions grain size of the coating decreases and morphology of grain changes to a favorable dense nodularity.

  11. Copper as a target for prostate cancer therapeutics: copper-ionophore pharmacology and altering systemic copper distribution

    Science.gov (United States)

    Denoyer, Delphine; Pearson, Helen B.; Clatworthy, Sharnel A.S.; Smith, Zoe M.; Francis, Paul S.; Llanos, Roxana M.; Volitakis, Irene; Phillips, Wayne A.; Meggyesy, Peter M.; Masaldan, Shashank; Cater, Michael A.

    2016-01-01

    Copper-ionophores that elevate intracellular bioavailable copper display significant therapeutic utility against prostate cancer cells in vitro and in TRAMP (Transgenic Adenocarcinoma of Mouse Prostate) mice. However, the pharmacological basis for their anticancer activity remains unclear, despite impending clinical trails. Herein we show that intracellular copper levels in prostate cancer, evaluated in vitro and across disease progression in TRAMP mice, were not correlative with copper-ionophore activity and mirrored the normal levels observed in patient prostatectomy tissues (Gleason Score 7 & 9). TRAMP adenocarcinoma cells harbored markedly elevated oxidative stress and diminished glutathione (GSH)-mediated antioxidant capacity, which together conferred selective sensitivity to prooxidant ionophoric copper. Copper-ionophore treatments [CuII(gtsm), disulfiram & clioquinol] generated toxic levels of reactive oxygen species (ROS) in TRAMP adenocarcinoma cells, but not in normal mouse prostate epithelial cells (PrECs). Our results provide a basis for the pharmacological activity of copper-ionophores and suggest they are amendable for treatment of patients with prostate cancer. Additionally, recent in vitro and mouse xenograft studies have suggested an increased copper requirement by prostate cancer cells. We demonstrated that prostate adenocarcinoma development in TRAMP mice requires a functional supply of copper and is significantly impeded by altered systemic copper distribution. The presence of a mutant copper-transporting Atp7b protein (tx mutation: A4066G/Met1356Val) in TRAMP mice changed copper-integration into serum and caused a remarkable reduction in prostate cancer burden (64% reduction) and disease severity (grade), abrogating adenocarcinoma development. Implications for current clinical trials are discussed. PMID:27175597

  12. Theoretical study of magnetic layers of nickel on copper; dead or alive?

    Science.gov (United States)

    Ernst, A.; Lueders, M.; Temmerman, W. M.; Szotek, Z.; van der Laan, G.

    2000-07-01

    We studied the persistence of magnetism in ultrathin nickel films on copper. Layer-dependent magnetic moments in Ni films on the (001), (110) and (111) surfaces of Cu have been calculated using the Korringa-Kohn-Rostoker Green's function method. The results show that, at temperature T = 0, a single nickel monolayer is ferromagnetic on Cu(001) and Cu(110) but magnetically `dead' on the more closely packed Cu(111) surface. Films of two and more layers of Ni are always ferromagnetic, with the magnetic moment enhanced in the surface layer but strongly reduced in the interface layer. Due to the short screening length, both the effect of the interface and that of the surface are confined to only a few atomic layers.

  13. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  14. Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

    2017-04-15

    Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

  15. Measurement of contact angle of copper-bearing shales using the captive bubble method

    Directory of Open Access Journals (Sweden)

    Danuta Szyszka

    2014-09-01

    Full Text Available This paper describes the measurement of contact angle of the natural surface of copper-bearing shales immersed in solutions of selected reagents of various concentrations using captive bubble method. It demonstrates that the copper-bearing shales coming from Legnicko-Głogwski Copper Region develop natural hydrophobic properties in surfactant (frother solutions and its hydrophobicity decreases from 82⁰ contact angle in distilled water, 78⁰ in C4E1 solutions, 76⁰ in C4E2 solutions, to 75⁰ in dodecylphenol solutions. These data show that the addition of frother causes a decrease of shale hydrophobicity but it can reduce stability of the thin film between the grain and air bubble. It means that flotation of copperbearing shales in the presence of frother will only be possible provided specific concentrations.

  16. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  17. Sol-gel deposition and electrical properties of laser irradiated Cu doped TiO2 multilayer thin films

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available Multilayer thin films (3, 5 and 7 of 20% copper doped titanium dioxide (Cu:TiO2 have been deposited on glass substrates by sol-gel spin coating method. After deposition, films have been irradiated by a beam of continuous wave diode laser (532 nm for two minutes at the angle of 45°. Structural, surface morphology and electrical properties of films have been investigated by X-rays diffraction (XRD, scanning electron microscope (SEM and four point probe technique respectively. XRD shows the formation of titanium copper oxide. Surface morphology of thin films indicated that the average grain size is increased by increasing the number of layers. The average sheet resistivity of 3, 5 and 7 layers of thin films measured by four point probe technique is 2.2 × 104, 1.2 × 104 and 1.0 × 104 (Ohm-cm respectively. The present study will facilitate a cost effective and environmental friendly study for several properties of materials. Keywords: Cu:TiO2, Multilayer thin films, Diode laser

  18. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  19. Native copper as a natural analogue for copper canisters

    International Nuclear Information System (INIS)

    Marcos, N.

    1989-12-01

    This paper discusses the occurrence of native copper as found in geological formations as a stability analogue of copper canisters that are planned to be used for the disposal of spent nuclear fuel in the Finnish bedrock. A summary of several publications on native copper occurrences is presented. The present geochemical and geohydrological conditions in which copper is met with in its metallic state show that metallic copper is stable in a wide range of temperatures. At low temperatures native copper is found to be stable where groundwater has moderate pH (about 7), low Eh (< +100 mV), and low total dissolved solids, especially chloride. Microscopical and microanalytical studies were carried out on a dozen of rock samples containing native copper. The results reveal that the metal shows no significant alteration. Only the surface of copper grains is locally coated. In the oldest samples there exist small corrosion cracks; the age of the oldest samples is over 1,000 million years. A review of several Finnish groundwater studies suggests that there are places in Finland where the geohydrological conditions are favourable for native copper stability. (orig.)

  20. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  1. Electropolymerization of poly (aniline-co-o-anisidine) on copper and its anticorrosion properties

    International Nuclear Information System (INIS)

    Ozyilmaz, A T

    2008-01-01

    Poly(aniline-co-o-anisidine) of copolymer coatings was synthesized on the copper surface (Cu) with two different amounts of p-toluenesulfonic acid (p-TSA) added to the aqueous sodium oxalate (NaOX) solution. The copper substrates in NaOX solutions containing p-TSA acid had a fairly reliable passive surface mainly due to the formation of copper (II) oxalate layer. The addition of p-TSA acid to the working electrolyte contributed to both the amount of copolymer deposition (growth) and that of copolymer coated per unit time of electropolymerization (growth rate). The growth of copolymer coating on Cu electrode was characterized by scanning electron microscopy. The corrosion performances of copolymer coatings were investigated in 3.5% NaCl solution with anodic polarization curves and electrochemical impedance spectroscopy. The results showed that p-TSA acid led to the diminishing of the permeability of the copolymer films. The copolymer coatings exhibited an effective barrier property on copper electrode and a remarkable anodic protection to substrate for longer exposure time

  2. Metal–organic coordinated multilayer film formation: Quantitative analysis of composition and structure

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Alexandra S.; Elinski, Meagan B.; Ohnsorg, Monica L.; Beaudoin, Christopher K.; Alexander, Kyle A.; Peaslee, Graham F.; DeYoung, Paul A.; Anderson, Mary E., E-mail: meanderson@hope.edu

    2015-09-01

    Metal–organic coordinated multilayers are self-assembled thin films fabricated by alternating solution–phase deposition of bifunctional organic molecules and metal ions. The multilayer film composed of α,ω-mercaptoalkanoic acid and Cu (II) has been the focus of fundamental and applied research with its robust reproducibility and seemingly simple hierarchical architecture. However, internal structure and composition have not been unambiguously established. The composition of films up to thirty layers thick was investigated using Rutherford backscattering spectrometry and particle induced X-ray emission. Findings show these films are copper enriched, elucidating a 2:1 ratio for the ion to molecule complexation at the metal–organic interface. Results also reveal that these films have an average layer density similar to literature values established for a self-assembled monolayer, indicating a robust and stable structure. The surface structures of multilayer films have been characterized by contact angle goniometry, ellipsometry, and scanning probe microscopy. A morphological transition is observed as film thickness increases from the first few foundational layers to films containing five or more layers. Surface roughness analysis quantifies this evolution as the film initially increases in roughness before obtaining a lower roughness comparable to the underlying gold substrate. Quantitative analysis of topographical structure and internal composition for metal–organic coordinated multilayers as a function of number of deposited layers has implications for their incorporation in the fields of photonics and nanolithography. - Highlights: • Layer-by-layer deposition is examined by scanning probe microscopy and ion beam analysis. • Film growth undergoes morphological evolution during foundational layer deposition. • Image analysis quantified surface features such as roughness, grain size, and coverage. • Molecular density of each film layer is found to

  3. COPPER AND COPPER-CONTAINING PESTICIDES: METABOLISM, TOXICITY AND OXIDATIVE STRESS

    Directory of Open Access Journals (Sweden)

    Viktor Husak

    2015-05-01

    Full Text Available The purpose of this paper is to provide a brief review of the current knowledge regarding metabolism and toxicity of copper and copper-based pesticides in living organisms. Copper is an essential trace element in all living organisms (bacteria, fungi, plants, and animals, because it participates in different metabolic processes and maintain functions of organisms. The transport and metabolism of copper in living organisms is currently the subject of many studies. Copper is absorbed, transported, distributed, stored, and excreted in the body via the complex of homeostatic processes, which provide organisms with a needed constant level of this micronutrient and avoid excessive amounts. Many aspects of copper homeostasis were studied at the molecular level. Copper based-pesticides, in particularly fungicides, bacteriocides and herbicides, are widely used in agricultural practice throughout the world. Copper is an integral part of antioxidant enzymes, particularly copper-zinc superoxide dismutase (Cu,Zn-SOD, and plays prominent roles in iron homeostasis. On the other hand, excess of copper in organism has deleterious effect, because it stimulates free radical production in the cell, induces lipid peroxidation, and disturbs the total antioxidant capacity of the body. The mechanisms of copper toxicity are discussed in this review also.

  4. In situ crystallized zirconium phenylphosphonate films with crystals vertically to the substrate and their hydrophobic, dielectric, and anticorrosion properties.

    Science.gov (United States)

    Cui, Zhaohui; Zhang, Fazhi; Wang, Lei; Xu, Sailong; Guo, Xiaoxiao

    2010-01-05

    The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.

  5. Decomposition of poly(amide-imide) film using atmospheric pressure non-equilibrium plasma generated in a stream of H2O/Ar mixed gases

    International Nuclear Information System (INIS)

    Ueshima, M.; Aoki, Y.; Suzuki, K.; Kuwasima, S.; Sugiyama, K.

    2010-01-01

    Atmospheric pressure non-equilibrium Ar-H 2 O plasma was irradiated to exfoliate a thin film of a heat-resistant polymer, poly(amide-imide) coating on enamel copper wire. The plasma was produced by applying microwave power inducted with Ar-H 2 , Ar-O 2 , Ar-H 2 O or Ar-H 2 -O 2 mixed gases. The poly(amide-imide) thin film was exfoliate by those plasma irradiations. The magnitude of exfoliation depended on the distance of the copper wire from the plasma generating material and reached a maximum at a distance around 4 cm for each plasma irradiation. Surface conditions of the copper wire varied depending on the inducted gases. Ar-O 2 plasma irradiation oxidized the copper surface while other plasmas kept the copper surface unchanged. The time it took to exfoliate the poly(amide-imide) depended on the irradiation source, either Ar-O 2 (within 60 s), Ar-H 2 O (within 70 s), Ar-H 2 -O 2 (within 70 s) or Ar-H 2 (within 125 s). The Ar-H 2 O plasma irradiation under non-equilibrium atmospheric pressure was found to be the best method for exfoliating the poly(amide-imide) thin film coating on enamel copper wires rather than the Ar-H 2 -O 2 plasma because of its simplicity and safety.

  6. Uptake and internalisation of copper by three marine microalgae: comparison of copper-sensitive and copper-tolerant species.

    Science.gov (United States)

    Levy, Jacqueline L; Angel, Brad M; Stauber, Jennifer L; Poon, Wing L; Simpson, Stuart L; Cheng, Shuk Han; Jolley, Dianne F

    2008-08-29

    Although it has been well established that different species of marine algae have different sensitivities to metals, our understanding of the physiological and biochemical basis for these differences is limited. This study investigated copper adsorption and internalisation in three algal species with differing sensitivities to copper. The diatom Phaeodactylum tricornutum was particularly sensitive to copper, with a 72-h IC50 (concentration of copper to inhibit growth rate by 50%) of 8.0 microg Cu L(-1), compared to the green algae Tetraselmis sp. (72-h IC50 47 microg Cu L(-1)) and Dunaliella tertiolecta (72-h IC50 530 microg Cu L(-1)). At these IC50 concentrations, Tetraselmis sp. had much higher intracellular copper (1.97+/-0.01 x 10(-13)g Cu cell(-1)) than P. tricornutum (0.23+/-0.19 x 10(-13)g Cu cell(-1)) and D. tertiolecta (0.59+/-0.05 x 10(-13)g Cu cell(-1)), suggesting that Tetraselmis sp. effectively detoxifies copper within the cell. By contrast, at the same external copper concentration (50 microg L(-1)), D. tertiolecta appears to better exclude copper than Tetraselmis sp. by having a slower copper internalisation rate and lower internal copper concentrations at equivalent extracellular concentrations. The results suggest that the use of internal copper concentrations and net uptake rates alone cannot explain differences in species-sensitivity for different algal species. Model prediction of copper toxicity to marine biota and understanding fundamental differences in species-sensitivity will require, not just an understanding of water quality parameters and copper-cell binding, but also further knowledge of cellular detoxification mechanisms.

  7. Fabrication of Copper Nanowire Films and their Incorporation into Polymer Matrices for Antibacterial and Marine Antifouling Applications

    NARCIS (Netherlands)

    Jiang, S.; Sreethawong, T.; Siew Chen Lee, S.; Bee Jin Low, M.; Yin Win, BrzozowskaK.; Brzozowska, A.M.; Lay Ming Teo, S.; Vancso, Gyula J.; Janczewski, D.; Han, M-Y

    2015-01-01

    With the ban of tributyltin, copper-based biocides are now widely used in antifouling coatings as the major active ingredients. Given the past experience of heavy-metal accumulation in harbors with limited water exchange, there is a significant interest in developing copper materials that greatly

  8. The evaluation of Young's modulus and residual stress of Cu films by NiFe/Cu bilayer film microbridge tests

    International Nuclear Information System (INIS)

    Zhou Zhimin; Zhou Yong; Cao Ying; Ding Wen; Mao Haiping

    2008-01-01

    This paper proposes a method to estimate the thickness limit for single-layer microbridge tests and also the thickness limit of one film on another film with known thickness for bilayer microbridge tests. To evaluate the mechanical properties of the Cu film, which could not be measured by single-layer microbridge tests, the NiFe single-layer film and NiFe/Cu bilayer film on silicon substrate are fabricated onto the microbridge by the MEMS technique. A load–deflection experiment is conducted upon the ceramic shaft adhered to the microbridge center by means of the XP nanoindenter system. From single-layer microbridge theory, Young's modulus and the residual stress of the NiFe film are deduced to be 192.74 ± 8.10 GPa and 287.75 ± 16.18 MPa, respectively. The data are introduced into bilayer microbridge theory and Young's modulus and the residual stress of the copper film are calculated to be 118.71 ± 6.54 GPa and 41.34 ± 4.42 MPa, respectively. The experimental results correspond well with those of nanoindentation

  9. Effect of Physical Property and Surface Morphology of Copper Foil at Electrodeposition Parameter

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Tae Gyu; Park, Il Song; Lee, Man Hyung; Seol, Kyeong Won [Chonbuk National University, Jeonju (Korea, Republic of)

    2014-06-15

    The effect of additives, current density and plated temperature on the surface morphology and physical property, during copper electrodeposition on polyimide (PI) film was investigated. Two kinds of additives, Cl and leveler (additive B), were used in this study. Electrochemical experiments were performed in conjunction with SEM, XRD and four-point probe to characterize the morphology and mechanical characteristics of copper electrodeposited in the presence of the additives. The surface roughness, crystal growth orientation and resistivity was controlled by the concentration of additive B. High resistivity and lower peel strength were observed on the surface of the copper layer electroplated in the electrolyte without additive B. However, a uniform surface, lower resistivity and high flexibility were obtained with a combination of 20 ppm Cl and 100 ppm additive B. Large particles were observed on the surface of the copper layer electroplated using a current density of 25 mA/cm{sup 2}, but a uniform surface and lower resistivity were obtained using a current density of 10 mA/cm{sup 2}. One of the required important properties of FCCL is flexibility of the copper foil. High flexibility of FCCL was obtained at a low current density, rather than a high current density. Moreover, a reasonable current density is 20 mA/cm{sup 2}, considering the productivity and mechanical properties of copper foil.

  10. A potentiodynamic study of the reduction of oxygen on copper

    International Nuclear Information System (INIS)

    King, F.; Litke, C.D.

    1994-07-01

    The reduction of oxygen on copper has been studied in 0.1 mol·dm -3 NaCl solutions using potentiodynamic techniques. Experiments were carried out in unbuffered and phosphate-buffered solutions at pH 7. Additional experiments in NaCl solution were performed at pH 10, with the bulk pH adjusted by adding NaOH. Some voltammetric studies in deaerated electrolytes were carried out to examine the nature of the surface films formed on the electrode. The reduction of oxygen on copper is dominated by the 4-electron reduction to OH - . Limited quantities of peroxide were detected by the ring electrode at disc potentials in the joint- and kinetic-control regions. No peroxide was detected in the transport-limiting region. The rate of reduction of oxygen is influenced by the nature of the surface film on the electrode. At interfacial pH values of ∼10, a catalytic surface film forms, thought to be submonolayer Cu(OH) ads or submonolayer Cu 2 O. simultaneously, a peak is observed on the current-potential curve. This peak is observed in neutral solutions with atmospheres of 50% O 2 /N 2 and 100% O 2 and in pH 10 solution with atmospheres >∼10% O 2 /N 2 . The peak is not observed in phosphate-buffered solution because of the buffering action on the interfacial pH. At potentials positive of the peak potential, a thin Cu 2 O layer forms in unbuffered solutions on which the rate of oxygen reduction is partially inhibited. (author). 44 refs., 17 figs

  11. Copper and CuNi alloys substrates for HTS coated conductor applications protected from oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Segarra, M; Diaz, J; Xuriguera, H; Chimenos, J M; Espiell, F [Dept. of Chemical Engineering and Metallurgy, Univ. of Barcelona, Barcelona (Spain); Miralles, L [Lab. d' Investigacio en Formacions Geologiques. Dept. of Petrology, Geochemistry and Geological Prospecting, Univ. of Barcelona, Barcelona (Spain); Pinol, S [Inst. de Ciencia de Materials de Barcelona, Bellaterra (Spain)

    2003-07-01

    Copper is an interesting substrate for HTS coated conductors for its low cost compared to other metallic substrates, and for its low resistivity. Nevertheless, mechanical properties and resistance to oxidation should be improved in order to use it as substrate for YBCO deposition by non-vacuum techniques. Therefore, different cube textured CuNi tapes were prepared by RABIT as possible substrates for deposition of high critical current density YBCO films. Under the optimised conditions of deformation and annealing, all the studied CuNi alloys (2%, 5%, and 10% Ni) presented (100) left angle 001 right angle cube texture which is compatible for YBCO deposition. Textured CuNi alloys present higher tensile strength than pure copper. Oxidation resistance of CuNi tapes under different oxygen atmospheres was also studied by thermogravimetric analysis and compared to pure copper tapes. Although the presence of nickel improves mechanical properties of annealed copper, it does not improve its oxidation resistance. However, when a chromium buffer layer is electrodeposited on the tape, oxygen diffusion is slowed down. Chromium is, therefore, useful for protecting copper and CuNi alloys from oxidation although its recrystallisation texture, (110), is not suitable for coated conductors. (orig.)

  12. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  13. Electrochemical stripping determination of traces of copper, lead, cadmium and zinc in zirconium metal and zirconium dioxide

    International Nuclear Information System (INIS)

    Stulik, K.; Beran, P.; Dolezal, J.; Opekar, F.

    1978-01-01

    Procedures have been developed for the determination of copper, lead, cadmium and zinc in zirconium metal and zirconium dioxide, at concentrations of 1ppm or less. Zirconium metal was dissolved in sulphuric acid, and zirconium dioxide decomposed under pressure with hydrofluoric acid. Sample solutions were prepared in dilute sulphuric acid. For the stripping determination, the sample solution was either mixed with a complexing tartrate base electrolyte or the pre-electrolysis was carried out in acid solution, with the acid solution being exchanged for a pure base electrolyte (e.g. an acetate buffer) for the stripping step. The stripping step was monitored by d.c., differential pulse and Kalousek commutator voltammetry and the three methods were compared. A stationary mercury-drop electrode can generally be used for all the methods, whereas a mercury-film electrode is suitable only for the d.c. voltammetric determination of copper, lead and cadmium, as pulse measurements with films are poorly reproducible and the electrodes are easily damaged. The relative standard deviation does not exceed 20%. Some samples contained relatively large amounts of copper, which is best separated by electrodeposition on a platinum electrode. (author)

  14. Twin boundary spacing effects on shock response and spall behaviors of hierarchically nanotwinned fcc metals

    International Nuclear Information System (INIS)

    Yuan, Fuping; Chen, Liu; Jiang, Ping; Wu, Xiaolei

    2014-01-01

    Atomistic deformation mechanisms of hierarchically nano-twinned (NT) Ag under shock conditions have been investigated using a series of large-scale molecular dynamics simulations. For the same grain size d and the same spacing of primary twins λ 1 , the average flow stress behind the shock front in hierarchically NT Ag first increases with decreasing spacing of secondary twins λ 2 , achieving a maximum at a critical λ 2 , and then drops as λ 2 decreases further. Above the critical λ 2 , the deformation mechanisms are dominated by three type strengthening mechanisms: (a) partial dislocations emitted from grain boundaries (GBs) travel across other boundaries; (b) partial dislocations emitted from twin boundaries (TBs) travel across other TBs; (c) formation of tertiary twins. Below the critical λ 2 , the deformation mechanism are dominated by two softening mechanisms: (a) detwinning of secondary twins; (b) formation of new grains by cross slip of partial dislocations. Moreover, the twin-free nanocrystalline (NC) Ag is found to have lower average flow stress behind the shock front than those of all hierarchically NT Ag samples except the one with the smallest λ 2 of 0.71 nm. No apparent correlation between the spall strength and λ 2 is observed in hierarchically NT Ag, since voids always nucleate at both GBs and boundaries of the primary twins. However, twin-free NC Ag is found to have higher spall strength than hierarchically NT Ag. Voids can only nucleate from GBs for twin-free NC Ag, therefore, twin-free NC Ag has less nucleation sources along the shock direction when compared to hierarchically NT Ag, which requiring higher tensile stress to create spallation. These findings should contribute to the understandings of deformation mechanisms of hierarchically NT fcc metals under extreme deformation conditions

  15. Use of low-temperature nanostructured CuO thin films deposited by spray-pyrolysis in lithium cells

    International Nuclear Information System (INIS)

    Morales, J.; Sanchez, L.; Martin, F.; Ramos-Barrado, J.R.; Sanchez, M.

    2005-01-01

    Nanostructured CuO thin films were prepared by spray pyrolysis of aqueous copper acetate solutions at temperatures over 200-300 deg C range. The textural and structural properties of the films were determined by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and X-ray photoelectron spectroscopy (XPS). Although the sole crystalline phase detected in the film was CuO, XPS spectra revealed a more complex surface structure due to the presence of undecomposed copper acetate that can be easily removed by Ar + ion sputtering. The heating temperature was found to have little limited effect on the particle size and thickness of the films, which, however, increased significantly increasing deposition time. The film with the smallest grain size exhibited an excellent electrochemical response in Li battery electrodes and was capable of supplying sustained specific capacity as high as 625 A h kg -1 (50% greater than that delivered by bulk CuO and close to the theoretical capacity for the CuO Cu reaction) upon extensive cycling

  16. Radiation grafting from binary mixtures of vinyl ether of mono ethanol amine with N-vinylpyrrolidone and vinyl ether of ethylene glycol onto polyolefins films and metallization of obtained films

    International Nuclear Information System (INIS)

    Al'-Saed Abdel' Aal'; Nurkeeva, Z.; Khutoryanskij, V.; Mun, G.; Sangajlo, M.

    2003-01-01

    Radiation grafting from binary mixtures of vinyl ether of mono ethanol amine with N-vinylpyrrolidone and vinyl ether of ethylene glycol onto polyolefins films using γ-radiation and accelerated electrons has been studied. IR-spectroscopy is used to confirm the structure of grafted films. A combination of and metallization of obtained films. A combination of gravimetric and potentiometric techniques is applied to determine the fraction of each monomer in graft copolymer. Water uptake and contact angle measurements confirmed that the grafting process improve the hydrophilic properties of obtained films. The obtained materials are metallized by electroless copper plating. The metallized films have good electro conductive properties. (author)

  17. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  18. TiO2 and Cu/TiO2 Thin Films Prepared by SPT

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-12-01

    Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

  19. Copper indium diselenide films deposited by spray-pyrolysis; Filmes de disseleneto de cobre e indio depositados por spray-pirolise

    Energy Technology Data Exchange (ETDEWEB)

    Manhanini, C. S.; Paes Junior, H.R., E-mail: carlamanhanini@gmail.com, E-mail: hervalpaes@gmail.com [Universidade Estadual do Norte Fluminense, (CCT/UENF), Campos dos Goytacazes, RJ (Brazil). Lab. de Materiais Avancados

    2017-04-15

    Cu{sub 1-x}In{sub x} Se{sub 2} (0.45≤ x ≤0.80) films were deposited on glass substrate by spray pyrolysis technique, for use as absorbing layer of photovoltaic cells. The structural, morphological, optical and electrical properties of the films were analyzed according to the variation of the stoichiometry used. The analysis by X-ray diffraction showed that the most intense peaks were of orientation (204/220) and the films have the phases CuSe, CuSe{sub 2} and CuInSe{sub 2}. The films showed uniform surface without cracks independently of the stoichiometry used. In the electrical characterization, the deposited films showed activation energy of the electrical conduction process with average value of 0.74 eV and typical behavior for semiconductors. The optical characterization was performed at the wavelength gap of 350 to 1100 nm, and the films showed absorption coefficient on the order of 10{sup 3} cm{sup -1} in the wavelength of 550 nm and optical band gap of 1.4 eV. The results indicated that the most suitable condition for deposition of films for their application as absorbing layer had as substrate temperature 400 °C, a solution flow rate of 1 mL/min, deposition time of 10 min and stoichiometry of Cu{sub 0.2}In{sub 0.8}Se{sub 2}, thus obtaining films without cracks, with large absorption coefficient of 6.8x10{sup 3} cm{sup -1} for the wavelength of 550 nm, thickness of approximately 2.5 μm and electrical resistivity of 0.13 kΩ.m at room temperature. (author)

  20. Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

    Directory of Open Access Journals (Sweden)

    Jie Zhang

    2013-01-01

    Full Text Available Copper zinc tin sulfur (CZTS thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1, appropriate band gap (~1.5 eV, and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS. In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT precursors were deposited by thermal evaporation and then sulfurized in N2 + H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112 orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm, 1.714×1017 cm−3, and 3.89 cm2/(V · s, respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

  1. Nucleate pool boiling, film boiling and single-phase free convection at pressures up to the critical state. Part I: Integral heat transfer for horizontal copper cylinders

    Energy Technology Data Exchange (ETDEWEB)

    Gorenflo, Dieter; Baumhoegger, Elmar; Windmann, Thorsten; Herres, Gerhard [Institut fuer Energie- und Verfahrenstechnik, Universitaet Paderborn, Warburger Str. 100, D-33098 Paderborn (Germany)

    2010-11-15

    Transcritical working cycles for refrigerants have led to increased interest in heat transfer near the Critical State. In general, experimental results for this region differ significantly from those far from it because some fluid properties vary much more there than at a greater distance. In this paper, measurements for two-phase and single-phase free convective heat transfer from an electrically heated copper tube with 25 mm O.D. to refrigerant R125 are discussed for fluid states very close to the Critical Point and far from it. It is shown that heat transfer for film boiling slightly below and for free convection slightly above the critical pressure is very similar. The new - and also previous - experimental data for nucleate boiling, film boiling, and single-phase free convection are compared with calculated results between atmospheric and critical pressure. It can be concluded that the Principle of Corresponding States in its simplest form is very well suited to transfer the results to other refrigerants. In Part II, particular attention will be given to a minimum superheat for nucleate boiling and a maximum superheat for film boiling and single-phase free convection within the circumferential variation of the isobaric wall superheat on the lower parts of the tube. (author)

  2. Study of thin metal films and oxide materials for nanoelectronics applications

    OpenAIRE

    De Los Santos Valladares, Luis

    2012-01-01

    Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

  3. Ionized vapor deposition of antimicrobial Ti–Cu films with controlledcopper release

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Wulff, H.; Kšírová, Petra; Zietz, C.; Drache, S.; Čada, Martin; Hubička, Zdeněk; Bader, R.; Tichý, M.; Helm, Ch.A.; Hippler, R.

    2014-01-01

    Roč. 550, JAN (2014), s. 389-3947 ISSN 0040-6090 R&D Projects: GA TA ČR TA01010517; GA ČR(CZ) GAP205/11/0386 Institutional support: RVO:68378271 Keywords : titanium, * copper * thin films * Ti–Cu films * high power impulse magnetron sputtering * X-ray diffraction Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.759, year: 2014 http://www.sciencedirect.com/science/article/pii/S0040609013018166

  4. Preparation and characterization of CuO nanostructures on copper substrate as selective solar absorbers

    International Nuclear Information System (INIS)

    Karthick Kumar, S.; Murugesan, S.; Suresh, S.

    2014-01-01

    Selective solar absorber coatings of copper oxide (CuO) on copper substrates are prepared by room temperature oxidation of copper at different alkaline conditions. The surface morphology and structural analyses of the CuO coatings are carried out by scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and Raman spectroscopy techniques. XRD and Raman studies indicated the single phase nature and high crystallinity of the prepared CuO nanostructures. Different CuO nanostructures, viz., nanoneedles, nanofibers and nanoparticles are formed at different alkaline conditions. The influence of reaction time on morphology of the CuO nanostructures is also studied. The thermal emittance values of these nanostructured CuO samples are found to be in the range of 6–7% and their solar absorptances are ranged between 84 and 90%. The observed high solar selectivity values (>12.7) suggest that these coatings can be used as selective absorbers in solar thermal gadgets. - Highlights: • Nanostructured CuO thin films on Cu substrate have been prepared by a facile method. • Morphology of the CuO nanostructures varies with reaction pH. • The thin films show high absorptance in the visible region and low thermal emittance. • Multiple absorption in the porous structure leads to high solar absorptance. • Nanostructures posses solar selectivity values >12

  5. CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

    2011-01-01

    In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  6. Corrosion of copper in oxygen-deficient groundwater with and without deep bedrock micro-organisms: Characterisation of microbial communities and surface processes

    Energy Technology Data Exchange (ETDEWEB)

    Huttunen-Saarivirta, E., E-mail: elina.huttunen-saarivirta@vtt.fi [VTT Technical Research Centre of Finland, Materials Performance, Kemistintie 3, FI-02044 VTT (Finland); Rajala, P. [VTT Technical Research Centre of Finland, Materials Performance, Kemistintie 3, FI-02044 VTT (Finland); Bomberg, M. [VTT Technical Research Centre of Finland, Geobiotechnology, Tietotie 2, FI-02044 VTT (Finland); Carpén, L. [VTT Technical Research Centre of Finland, Materials Performance, Kemistintie 3, FI-02044 VTT (Finland)

    2017-02-28

    Highlights: • Copper was exposed to groundwater with and without deep bedrock micro-organisms. • Biofilm composition was determined and correlated with the behaviour of copper. • Under biotic conditions, the film of Cu{sub 2}S formed on copper surfaces. • Bacterial pool was in a key role for the morphology and properties of Cu{sub 2}S film. • Under abiotic conditions, Cu{sub 2}O systematically developed on copper surfaces. - Abstract: Copper specimens were exposed to oxygen-deficient artificial groundwater in the presence and absence of micro-organisms enriched from the deep bedrock of the planned nuclear waste repository site at Olkiluoto island on the western coast of Finland. During the exposure periods of 4 and 10 months, the copper specimens were subjected to electrochemical measurements. The biofilm developed on the specimens and the water used in the exposures were subjected to microbiological analyses. Changes in the water chemistry were also determined and surfaces of the copper specimens were characterized with respect to the morphology and composition of the formed corrosion products. The results showed that under biotic conditions, redox of the water and open circuit potential (OCP) of the copper specimens were generally negative and resulted in the build-up of a copper sulphide, Cu{sub 2}S, layer due to the activity of sulphate-reducing bacteria (SRB) that were included in the system. In the 4-month test, the electrochemical behaviour of the specimens changed during the exposure and alphaproteobactria Rhizobiales were the dominant bacterial group in the biofilm where the highest corrosion rate was observed. In the 10-month test, however, deltaproteobacteria SRB flourished and the initial electrochemical behaviour and the low corrosion rate of the copper were retained until the end of the test period. Under abiotic conditions, the positive water redox potential and specimen OCP correlated with the formation of copper oxide, Cu{sub 2}O

  7. Corrosion of copper in oxygen-deficient groundwater with and without deep bedrock micro-organisms: Characterisation of microbial communities and surface processes

    International Nuclear Information System (INIS)

    Huttunen-Saarivirta, E.; Rajala, P.; Bomberg, M.; Carpén, L.

    2017-01-01

    Highlights: • Copper was exposed to groundwater with and without deep bedrock micro-organisms. • Biofilm composition was determined and correlated with the behaviour of copper. • Under biotic conditions, the film of Cu_2S formed on copper surfaces. • Bacterial pool was in a key role for the morphology and properties of Cu_2S film. • Under abiotic conditions, Cu_2O systematically developed on copper surfaces. - Abstract: Copper specimens were exposed to oxygen-deficient artificial groundwater in the presence and absence of micro-organisms enriched from the deep bedrock of the planned nuclear waste repository site at Olkiluoto island on the western coast of Finland. During the exposure periods of 4 and 10 months, the copper specimens were subjected to electrochemical measurements. The biofilm developed on the specimens and the water used in the exposures were subjected to microbiological analyses. Changes in the water chemistry were also determined and surfaces of the copper specimens were characterized with respect to the morphology and composition of the formed corrosion products. The results showed that under biotic conditions, redox of the water and open circuit potential (OCP) of the copper specimens were generally negative and resulted in the build-up of a copper sulphide, Cu_2S, layer due to the activity of sulphate-reducing bacteria (SRB) that were included in the system. In the 4-month test, the electrochemical behaviour of the specimens changed during the exposure and alphaproteobactria Rhizobiales were the dominant bacterial group in the biofilm where the highest corrosion rate was observed. In the 10-month test, however, deltaproteobacteria SRB flourished and the initial electrochemical behaviour and the low corrosion rate of the copper were retained until the end of the test period. Under abiotic conditions, the positive water redox potential and specimen OCP correlated with the formation of copper oxide, Cu_2O. Furthermore, in the absence of

  8. Impurity Effects in Electroplated-Copper Solder Joints

    Directory of Open Access Journals (Sweden)

    Hsuan Lee

    2018-05-01

    Full Text Available Copper (Cu electroplating is a mature technology, and has been extensively applied in microelectronic industry. With the development of advanced microelectronic packaging, Cu electroplating encounters new challenges for atomic deposition on a non-planar substrate and to deliver good throwing power and uniform deposit properties in a high-aspect-ratio trench. The use of organic additives plays an important role in modulating the atomic deposition to achieve successful metallic coverage and filling, which strongly relies on the adsorptive and chemical interactions among additives on the surface of growing film. However, the adsorptive characteristic of organic additives inevitably results in an incorporation of additive-derived impurities in the electroplated Cu film. The incorporation of high-level impurities originating from the use of polyethylene glycol (PEG and chlorine ions significantly affects the microstructural evolution of the electroplated Cu film, and the electroplated-Cu solder joints, leading to the formation of undesired voids at the joint interface. However, the addition of bis(3-sulfopropyl disulfide (SPS with a critical concentration suppresses the impurity incorporation and the void formation. In this article, relevant studies were reviewed, and the focus was placed on the effects of additive formula and plating parameters on the impurity incorporation in the electroplated Cu film, and the void formation in the solder joints.

  9. Easy route to superhydrophobic copper-based wire-guided droplet microfluidic systems.

    Science.gov (United States)

    Mumm, Florian; van Helvoort, Antonius T J; Sikorski, Pawel

    2009-09-22

    Droplet-based microfluidic systems are an expansion of the lab on a chip concept toward flexible, reconfigurable setups based on the modification and analysis of individual droplets. Superhydrophobic surfaces are one suitable candidate for the realization of droplet-based microfluidic systems as the high mobility of aqueous liquids on such surfaces offers possibilities to use novel or more efficient approaches to droplet movement. Here, copper-based superhydrophobic surfaces were produced either by the etching of polycrystalline copper samples along the grain boundaries using etchants common in the microelectronics industry, by electrodeposition of copper films with subsequent nanowire decoration based on thermal oxidization, or by a combination of both. The surfaces could be easily hydrophobized with thiol-modified fluorocarbons, after which the produced surfaces showed a water contact angle as high as 171 degrees +/- 2 degrees . As copper was chosen as the base material, established patterning techniques adopted from printed circuit board fabrication could be used to fabricate macrostructures on the surfaces with the intention to confine the droplets and, thus, to reduce the system's sensitivity to tilting and vibrations. A simple droplet-based microfluidic chip with inlets, outlets, sample storage, and mixing areas was produced. Wire guidance, a relatively new actuation method applicable to aqueous liquids on superhydrophobic surfaces, was applied to move the droplets.

  10. Time, stress, and temperature-dependent deformation in nanostructured copper: Stress relaxation tests and simulations

    International Nuclear Information System (INIS)

    Yang, Xu-Sheng; Wang, Yun-Jiang; Wang, Guo-Yong; Zhai, Hui-Ru; Dai, L.H.; Zhang, Tong-Yi

    2016-01-01

    In the present work, stress relaxation tests, high-resolution transmission electron microscopy (HRTEM), and molecular dynamics (MD) simulations were conducted on coarse-grained (cg), nanograined (ng), and nanotwinned (nt) copper at temperatures of 22 °C (RT), 30 °C, 40 °C, 50 °C, and 75 °C. The comprehensive investigations provide sufficient information for the building-up of a formula to describe the time, stress, and temperature-dependent deformation and clarify the relationship among the strain rate sensitivity parameter, stress exponent, and activation volume. The typically experimental curves of logarithmic plastic strain rate versus stress exhibited a three staged relaxation process from a linear high stress relaxation region to a subsequent nonlinear stress relaxation region and finally to a linear low stress relaxation region, which only showed-up at the test temperatures higher than 22 °C, 22 °C, and 30 °C, respectively, in the tested cg-, ng-, and nt-Cu specimens. The values of stress exponent, stress-independent activation energy, and activation volume were determined from the experimental data in the two linear regions. The determined activation parameters, HRTEM images, and MD simulations consistently suggest that dislocation-mediated plastic deformation is predominant in all tested cg-, ng-, and nt-Cu specimens in the initial linear high stress relaxation region at the five relaxation temperatures, whereas in the linear low stress relaxation region, the grain boundary (GB) diffusion-associated deformation is dominant in the ng- and cg-Cu specimens, while twin boundary (TB) migration, i.e., twinning and detwinning with parallel partial dislocations, governs the time, stress, and temperature-dependent deformation in the nt-Cu specimens.

  11. Control of biofouling on titanium condenser tubes with the use of electroless copper plating

    International Nuclear Information System (INIS)

    Anandkumar, B.; George, R.P.; Kamachi Mudali, U.; Ramachandran, D.

    2015-01-01

    In sea water environments titanium condenser tubes face serious issues of biofouling and biomineralization. Electroless plating of nanocopper film is attempted inside the tubes for the control of biofilm formation. Using advanced techniques like AFM, SEM, and XPS, electroless copper plated flat Ti specimens were characterized. Examination of Cu coated Ti surfaces using AFM and SEM showed more reduction in the microroughness compared to anodized Ti surface. Cu 2p 3/2 peak in XPS spectral analysis showed the shift in binding energy inferring the reduction of the hydroxide to metallic copper. Tubular specimens were exposed to sea water up to three months and withdrawn at monthly intervals to evaluate antibacterial activity and long term stability of the coating. Total viable counts and epifluorescence microscopy analyses showed two orders decrease in bacterial counts on copper coated Ti specimens when compared to as polished control Ti specimens. Molecular biology techniques like DGGE and protein expression analysis system were done to get insight into the community diversity and copper tolerance of microorganisms. DGGE gel bands clearly showed the difference in the bacterial diversity inferring from the 16S rRNA gene fragments (V3 regions). Protein analysis showed distinct protein spots appearing in electroless copper coated Ti biofilm protein samples in addition to protein spots common to both the biofilms of Cu coated and as polished Ti. The results indicated copper accumulating proteins in copper resistant bacterial species of biofilm. Reduced microroughness of the surface and toxic copper ions resulted in good biofouling control even after three months exposure to sea water. (author)

  12. Direct transfer of graphene films for polyurethane substrate

    Energy Technology Data Exchange (ETDEWEB)

    Vilani, C.; Romani, E.C.; Larrudé, D.G. [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Barbosa, Gelza M. [Diretoria de Sistemas de Armas da Marinha, Marinha do Brasil, 20010-00 Rio de Janeiro, RJ (Brazil); Freire, F.L., E-mail: lazaro@vdg.fis.puc-rio.br [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro, RJ (Brazil)

    2015-11-30

    Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

  13. Direct transfer of graphene films for polyurethane substrate

    International Nuclear Information System (INIS)

    Vilani, C.; Romani, E.C.; Larrudé, D.G.; Barbosa, Gelza M.; Freire, F.L.

    2015-01-01

    Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

  14. Electrical conduction in composites containing copper core-copper

    Indian Academy of Sciences (India)

    Composites of nanometre-sized copper core-copper oxide shell with diameters in the range 6.1 to 7.3 nm dispersed in a silica gel were synthesised by a technique comprising reduction followed by oxidation of a suitably chosen precursor gel. The hot pressed gel powders mixed with nanometre-sized copper particles ...

  15. Development of biodegradable metaloxide/polymer nanocomposite films based on poly-ε-caprolactone and terephthalic acid

    Energy Technology Data Exchange (ETDEWEB)

    Varaprasad, Kokkarachedu, E-mail: varmaindian@gmail.com [Centro de Investigación de Polímeros Avanzados (CIPA), Avenida Collao 1202, Edificio de Laboratorios, Concepción (Chile); Pariguana, Manuel [Centro de Investigación de Polímeros Avanzados (CIPA), Avenida Collao 1202, Edificio de Laboratorios, Concepción (Chile); Centro de Innovación Tecnológica Agroindustrial CITE Agroindustrial, Panamericana Sur Km, 293.3, Ica (Peru); Raghavendra, Gownolla Malegowd [Department of Packaging, Yonsei University, Wonju, Gangwon-do 220 710 (Korea, Republic of); Jayaramudu, Tippabattini [Center for Nano Cellulose Future Composites, Department of Mechanical Engineering, Inha University, 253 Yonghyun-Dong, Nam-Ku, Incheon 402–751 (Korea, Republic of); Sadiku, Emmanuel Rotimi [Department of Polymer Technology, Tshwane University of Technology, CSIR-Campus, Pretoria 0040 (South Africa)

    2017-01-01

    The present investigation describes the development of metal-oxide polymer nanocomposite films from biodegradable poly-ε-caprolactone, disposed poly(ethylene terephthalate) oil bottles monomer and zinc oxide-copper oxide nanoparticles. The terephthalic acid and zinc oxide-copper oxide nanoparticles were synthesized by using a temperature-dependent precipitation technique and double precipitation method, respectively. The terephthalic acid synthesized was confirmed by FTIR analysis and furthermore, it was characterized by thermal analysis. The as-prepared CuO-ZnO nanoparticles structure was confirmed by XRD analysis and its morphology was analyzed by SEM/EDS and TEM. Furthermore, the metal-oxide polymer nanocomposite films have excellent mechanical properties, with tensile strength and modulus better than pure films. The metal-oxide polymer nanocomposite films that were successfully developed show a relatively brighter colour when compared to CuO film. These new metal-oxide polymer nanocomposite films can replace many non-degradable plastics. The new metal-oxide polymer nanocomposite films developed are envisaged to be suitable for use in industrial and domestic packaging applications. - Graphical abstract: Biodegradable metal-oxide/polymer nanocomposites films prepared by using poly-ε-caprolactone with disposed PET oil bottles terephthalic acid monomer. The development of biodegradable film provides a new material with desirable mechanical, physical and chemical properties and can be utilized for industrial applications. - Highlights: • Terephthalic acid obtained from disposed PET oil bottles via precipitation technique. • New nano metal-oxides were developed by double precipitation technique. • Nano metal-oxide polymer films were synthesized by solvent evaporation method. • Nano metal-oxide polymer films exhibit superior mechanical characteristics.

  16. Influence of citrate ions as complexing agent for electrodeposition of CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chraibi, F. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie; Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Fahoume, M.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Delplancke, J.L. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie

    2001-08-16

    The preparation of CuInSe{sub 2} thin films by electrodeposition is studied. The effect of sodium citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}) as complexing agent on the electrodeposition of pure copper, indium, selenium and of their ternary alloy is emphasized. Cathodic shifts of the copper and selenium electrodeposition potentials with increasing citrate concentration are observed. On the contrary, the presence of citrate in the electrolyte does not change the indium electrodeposition potential but improves its crystallinity. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction. The formation of CuInSe{sub 2} films with a chalcopyrite structure and good stoichiometry is observed. (orig.)

  17. Insights on the Role of Copper Addition in the Corrosion and Mechanical Properties of Binary Zr-Cu Metallic Glass Coatings

    Directory of Open Access Journals (Sweden)

    Junlei Tang

    2017-12-01

    Full Text Available The effect of copper addition on the corrosion resistance and mechanical properties of binary Zr100–xCux (x = 30, 50, 80, 90 at.% glassy coatings was investigated by means of electrochemical measurements, scanning electron microscopy (SEM, energy dispersive analysis spectroscopy (EDS, X-ray photoelectron spectroscopy (XPS and nano-indentation techniques. The corrosion resistance in 0.01 M deaerated H2SO4 solution and the mechanical properties of the Zr-Cu glassy coatings depend considerably upon the copper content in the glassy matrix. The top surfaces of the Zr-Cu coatings with lower Cu content were covered by a compact protective ZrO2 passive film. The competition between the oxidation of Zr atoms (ZrO2 film formation and the oxidation–dissolution of Cu atoms assumed the most important role in the electrochemical behavior of the Zr-Cu glassy coatings. The generation of ZrO2 on the surface benefited the formation of passive film; and the corrosion resistance of the metallic glass coatings depended on the coverage degree of ZrO2 passive film. The evolution of free volume affected both the mechanical and corrosion behaviors of the Zr-Cu glassy coatings.

  18. Evaluation of copper ion of antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori and optical, mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Hwan [School of Materials Science and Engineering, University of Yonsei, Seoul (Korea, Republic of); Choi, Yu-ri; Kim, Kwang-Mahn [Department and Research Institute of Dental Biomaterials and Bioengineering, College of Dentistry, University of Yonsei, Seoul (Korea, Republic of); Choi, Se-Young, E-mail: sychoi@yonsei.ac.kr [School of Materials Science and Engineering, University of Yonsei, Seoul (Korea, Republic of)

    2012-02-01

    Antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori of copper ion was researched. Also, additional effects of copper ion coating on optical and mechanical properties were researched as well. Copper ion was coated on glass substrate as a thin film to prevent bacteria from growing. Cupric nitrate was used as precursors for copper ion. The copper ion contained sol was deposited by spin coating process on glass substrate. Then, the deposited substrates were heat treated at the temperature range between 200 Degree-Sign C and 250 Degree-Sign C. The thickness of deposited copper layer on the surface was 63 nm. The antibacterial effect of copper ion coated glass on P. aeruginosa, S. typhimurium and H. pylori demonstrated excellent effect compared with parent glass. Copper ion contained layer on glass showed a similar value of transmittance compared with value of parent glass. The 3-point bending strength and Vickers hardness were 209.2 MPa, 540.9 kg/mm{sup 2} which were about 1.5% and 1.3% higher than the value of parent glass. From these findings, it is clear that copper ion coating on glass substrate showed outstanding effect not only in antibacterial activity but also in optical and mechanical properties as well.

  19. Ultrastretchable and flexible copper interconnect-based smart patch for adaptive thermotherapy

    KAUST Repository

    Hussain, Aftab M.; Lizardo, Ernesto B.; Sevilla, Galo T.; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2014-01-01

    Unprecedented 800% stretchable, non-polymeric, widely used, low-cost, naturally rigid, metallic thin-film copper (Cu)-based flexible and non-invasive, spatially tunable, mobile thermal patch with wireless controllability, adaptability (tunes the amount of heat based on the temperature of the swollen portion), reusability, and affordability due to low-cost complementary metal oxide semiconductor (CMOS) compatible integration. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Ultrastretchable and flexible copper interconnect-based smart patch for adaptive thermotherapy

    KAUST Repository

    Hussain, Aftab M.

    2014-12-03

    Unprecedented 800% stretchable, non-polymeric, widely used, low-cost, naturally rigid, metallic thin-film copper (Cu)-based flexible and non-invasive, spatially tunable, mobile thermal patch with wireless controllability, adaptability (tunes the amount of heat based on the temperature of the swollen portion), reusability, and affordability due to low-cost complementary metal oxide semiconductor (CMOS) compatible integration. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.