Dielectric nanostructures for broadband light trapping in organic solar cells

KAUST Repository

Raman, Aaswath

2011-09-15

Organic bulk heterojunction solar cells are a promising candidate for low-cost next-generation photovoltaic systems. However, carrier extraction limitations necessitate thin active layers that sacrifice absorption for internal quantum efficiency or vice versa. Motivated by recent theoretical developments, we show that dielectric wavelength-scale grating structures can produce significant absorption resonances in a realistic organic cell architecture. We numerically demonstrate that 1D, 2D and multi-level ITO-air gratings lying on top of the organic solar cell stack produce a 8-15% increase in photocurrent for a model organic solar cell where PCDTBT:PC71BM is the organic semiconductor. Specific to this approach, the active layer itself remains untouched yet receives the benefit of light trapping by nanostructuring the top surface below which it lies. The techniques developed here are broadly applicable to organic semiconductors in general, and enable partial decoupling between active layer thickness and photocurrent generation. © 2011 Optical Society of America.

Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

Yanyan Gao

2014-01-01

Full Text Available Incorporated foreign atoms into the quantum dots (QDs used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which is a chemical method. Experimental results indicate that PbS or CdS has been doped with In by SILAR method; the concentration of PbS and CdS which was doped In atoms has no significantly increase or decrease. In addition, incorporating of Indium atoms has resulted in the lattice distortions or changes of PbS or CdS and improved the light harvest of heterojunction. Using this heterojunction, Pt counter electrode and polysulfide electrolyte, to fabricate quantum dot sensitized solar cells, the short circuit current density ballooned to 27.01 mA/cm2 from 13.61 mA/cm2 and the open circuit voltage was improved to 0.43 V from 0.37 V at the same time.

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

KAUST Repository

Chavali, Raghu V. K.

2018-01-15

The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world\\'s silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module\\'s performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.

Performance of planar heterojunction perovskite solar cells under light concentration

Directory of Open Access Journals (Sweden)

Aaesha Alnuaimi

2016-11-01

Full Text Available In this work, we present 2D simulation of planar heterojunction perovskite solar cells under high concentration using physics-based TCAD. The performance of planar perovskite heterojunction solar cells is examined up to 1000 suns. We analyze the effect of HTM mobility and band structure, surface recombination velocities at interfaces and the effect of series resistance under concentrated light. The simulation results revealed that the low mobility of HTM material limits the improvement in power conversation efficiency of perovskite solar cells under concentration. In addition, large band offset at perovskite/HTM interface contributes to the high series resistance. Moreover, losses due to high surface recombination at interfaces and the high series resistance deteriorate significantly the performance of perovskite solar cells under concentration.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

OpenAIRE

Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

2016-01-01

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

Nanostructuring of Solar Cell Surfaces

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

Plasmon enhanced power conversion efficiency in inverted bulk heterojunction organic solar cell

Science.gov (United States)

Mohan, Minu; Ramkumar, S.; Namboothiry, Manoj A. G.

2017-08-01

P3HT:PCBM is one of the most studied polymer-fullerene system. However the reported power conversion efficiency (PCE) values falls within the range of 4% to 5%. The thin film architecture in OPVs exhibits low PCE compared to inorganic photovoltaic cells. This is mainly due to the low exciton diffusion length that limits the active layer thickness which in turn reduces the absorption of incident light. Several strategies are adapted in order to increase the absorption in the active layer without increasing the film thickness. Inclusion of metal nanoparticles into the polymer layer of bulk heterojunction (BHJ) solar cells is one of the promising methods. Incorporation of metal nanostructures increases the absorption of organic materials due to the high electromagnetic field strength in the vicinity of the excited surface plasmons. In this work, we used 60 nm Au plasmonic structures to improve the efficiency of organic solar cell. The prepared metal nano structures were characterized through scanning electron microscopy (SEM), and UV-Visible spectroscopy techniques. These prepared metallic nanoparticles can be incorporated either into the electron transport layer (ETL) or into the active P3HT:PC71BM layer. The effect of incorporation of plasmonic gold (Au) nanoparticle in the inverted bulk heterojunction organic photovoltaic cells (OPVs) of P3HT:PC71BM fabricated in ambient air condition is in progress. Initial studies shows an 8.5% enhancement in the PCE with the incorporation of Au nanoparticles under AM1.5G light of intensity 1 Sun.

Luminescence of solar cells with a-Si:H/c-Si heterojunctions

Science.gov (United States)

Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

2017-05-01

We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

Understanding Solvent Manipulation of Morphology in Bulk-Heterojunction Organic Solar Cells.

Science.gov (United States)

Chen, Yuxia; Zhan, Chuanlang; Yao, Jiannian

2016-10-06

Film morphology greatly influences the performance of bulk-heterojunction (BHJ)-structure-based solar cells. It is known that an interpenetrating bicontinuous network with nanoscale-separated donor and acceptor phases for charge transfer, an ordered molecular packing for exciton diffusion and charge transport, and a vertical compositionally graded structure for charge collection are prerequisites for achieving highly efficient BHJ organic solar cells (OSCs). Therefore, control of the morphology to obtain an ideal structure is a key problem. For this solution-processing BHJ system, the solvent participates fully in film processing. Its involvement is critical in modifying the nanostructure of BHJ films. In this review, we discuss the effects of solvent-related methods on the morphology of BHJ films, including selection of the casting solvent, solvent mixture, solvent vapor annealing, and solvent soaking. On the basis of a discussion on interaction strength and time between solvent and active materials, we believe that the solvent-morphology-performance relationship will be clearer and that solvent selection as a means to manipulate the morphology of BHJ films will be more rational. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid tandem solar cells with depleted-heterojunction quantum dot and polymer bulk heterojunction subcells

KAUST Repository

Kim, Taesoo

2015-10-01

We investigate hybrid tandem solar cells that rely on the combination of solution-processed depleted-heterojunction colloidal quantum dot (CQD) and bulk heterojunction polymer:fullerene subcells. The hybrid tandem solar cell is monolithically integrated and electrically connected in series with a suitable p-n recombination layer that includes metal oxides and a conjugated polyelectrolyte. We discuss the monolithic integration of the subcells, taking into account solvent interactions with underlayers and associated constraints on the tandem architecture, and show that an adequate device configuration consists of a low bandgap CQD bottom cell and a high bandgap polymer:fullerene top cell. Once we optimize the recombination layer and individual subcells, the hybrid tandem device reaches a VOC of 1.3V, approaching the sum of the individual subcell voltages. An impressive fill factor of 70% is achieved, further confirming that the subcells are efficiently connected via an appropriate recombination layer. © 2015.

Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

Science.gov (United States)

Wei, Fanan; Jiang, Minlin; Liu, Lianqing

2015-07-01

Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.

Thin film solar cells grown by organic vapor phase deposition

Science.gov (United States)

Yang, Fan

Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

Energy Technology Data Exchange (ETDEWEB)

Ferrara, Manuela

2009-11-24

The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

Detailed balance theory of excitonic and bulk heterojunction solar cells

Science.gov (United States)

Kirchartz, Thomas; Mattheis, Julian; Rau, Uwe

2008-12-01

A generalized solar cell model for excitonic and classical bipolar solar cells describes the combined transport and interaction of electrons, holes, and excitons in accordance with the principle of detailed balance. Conventional inorganic solar cells, single-phase organic solar cells and bulk heterojunction solar cells, i.e., nanoscale mixtures of two organic materials, are special cases of this model. For high mobilities, the compatibility with the principle of detailed balance ensures that our model reproduces the Shockley-Queisser limit irrespective of how the energy transport is achieved. For less ideal devices distinct differences become visible between devices that are described by linear differential equations and those with nonlinear effects, such as a voltage-dependent collection in bipolar p-i-n -type devices. These differences in current-voltage characteristics are also decisive for the validity of the reciprocity theorem between photovoltaic quantum efficiency and electroluminescent emission. Finally, we discuss the effect of band offset at the heterointerface in a bulk heterojunction cell and the effect of the average distances between these heterointerfaces on the performance of a solar cell in order to show how our detailed balance model includes also these empirically important quantities.

Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Hyomin Park

2012-01-01

Full Text Available To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Silicon heterojunction solar cell with passivated hole selective MoOx contact

Science.gov (United States)

Battaglia, Corsin; de Nicolás, Silvia Martín; De Wolf, Stefaan; Yin, Xingtian; Zheng, Maxwell; Ballif, Christophe; Javey, Ali

2014-03-01

We explore substoichiometric molybdenum trioxide (MoOx, x MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Pla, J.; Tamasi, M.; Rizzoli, R.; Losurdo, M.; Centurioni, E.; Summonte, C.; Rubinelli, F

2003-02-03

A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of {+-}10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported.

Effect of halogen-terminated additives on the performance and the nanostructure of all-polymer solar cells

Science.gov (United States)

Park, Soohyeong; Nam, Sungho; Seo, Jooyeok; Jeong, Jaehoon; Lee, Sooyong; Kim, Hwajeong; Kim, Youngkyoo

2015-02-01

Here, we report the influence of halogen-terminated additives on the performance and the nanostructure of all-polymer solar cells that are made with bulk heterojunction (BHJ) films of poly(3-hexylthiophene) (P3HT) (as an electron donor) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) (as an electron acceptor). Diiodooctane (DIO) and dibromooctane (DBO) were employed as additives in order to compare the effect of different halogen groups (bromine and iodine). Results showed that the power conversion efficiency of devices was slightly (˜15%) improved by using additives due to the increased open-circuit voltage and fill factor. The synchrotron radiation grazing-incidence X-ray diffraction (GIXD) measurements disclosed that the performance improvement was closely related to the relatively well-evolved nanostructures in the P3HT:F8BT films caused by the additives.

Flexible organic solar cells including efficiency enhancing grating structures

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de; Liu, Yinghui; Madsen, Morten

2013-01-01

, such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption......In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques...

Cost analysis of two silicon heterojunction solar cell designs

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, R.E.I.; Turkenburg, W.C.; Faaij, A.P.C.

2013-01-01

Research and Development of Silicon Heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. This paper investigates the production costs associated with two different SHJ cell designs investigated within the FLASH programme, a

Research on ZnO/Si heterojunction solar cells

DEFF Research Database (Denmark)

Chen, Li; Chen, Xinliang; Liu, Yiming

2017-01-01

We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO: B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c...

Impact of CH3NH3PbI3-PCBM bulk heterojunction active layer on the photovoltaic performance of perovskite solar cells

Science.gov (United States)

Chaudhary, Dhirendra K.; Kumar, Pankaj; Kumar, Lokendra

2017-10-01

We report here the impact of CH3NH3PbI3-PCBM bulk heterojunction (BHJ) active layer on the photovoltaic performance of perovskite solar cells. The solar cells were prepared in normal architecture on FTO coated glass substrates with compact TiO2 (c-TiO2) layer on FTO as electron transport layer (ETL) and poly(3-hexylthiophene) (P3HT) as hole transport layer (HTL). For comparison, a few solar cells were also prepared in planar heterojunction structure using CH3NH3PbI3 only as the active layer. The bulk heterojunction CH3NH3PbI3-PCBM active layer exhibited very large crystalline grains of 2-3 μm compared to ∼150 nm only in CH3NH3PbI3 active layer. Larger grains in bulk-heterojunction solar cells resulted in enhanced power conversion efficiency (PCE) through enhancement in all the photovoltaic parameters compared to planar heterojunction solar cells. The bulk-heterojunction solar cells exhibited ∼9.25% PCE with short circuit current density (Jsc) of ∼18.649 mA/cm2, open circuit voltage (Voc) of 0.894 V and Fill Factor (FF) of 0.554. There was ∼36.9% enhancement in the PCE of bulk-heterojunction solar cells compared to that of planar heterojunction solar cells. The larger grains are formed as a result of incorporation on PCBM in the active layer.

Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

Science.gov (United States)

Zhang, Chaomin

It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

KAUST Repository

Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

2017-01-01

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

Science.gov (United States)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Energy Technology Data Exchange (ETDEWEB)

Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

Science.gov (United States)

Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

2017-12-01

Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

Nanostructures for Organic Solar Cells

DEFF Research Database (Denmark)

Goszczak, Arkadiusz Jarosław

2016-01-01

The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic...... counterparts, due to the promising advantages, such as transparency, flexibility, ease of processing etc. But their efficiencies cannot be compared to the inorganic ones. Boosting the efficiency of OSCs by nanopatterning has thus been puzzling many researchers within the past years. Therefore various methods...... have been proposed to be used for developing efficient nanostructures for OSC devices such as, plasmonic structures, nanowires (NWs), gratings, nanorods etc. The nanostructuring methods applied though, do not offer the possibility of a cheap, rapid, reproducible and scalable fabrication. It is the aim...

Recent Advances in Interface Engineering for Planar Heterojunction Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Wei Yin

2016-06-01

Full Text Available Organic-inorganic hybrid perovskite solar cells are considered as one of the most promising next-generation solar cells due to their advantages of low-cost precursors, high power conversion efficiency (PCE and easy of processing. In the past few years, the PCEs have climbed from a few to over 20% for perovskite solar cells. Recent developments demonstrate that perovskite exhibits ambipolar semiconducting characteristics, which allows for the construction of planar heterojunction (PHJ perovskite solar cells. PHJ perovskite solar cells can avoid the use of high-temperature sintered mesoporous metal oxides, enabling simple processing and the fabrication of flexible and tandem perovskite solar cells. In planar heterojunction materials, hole/electron transport layers are introduced between a perovskite film and the anode/cathode. The hole and electron transporting layers are expected to enhance exciton separation, charge transportation and collection. Further, the supporting layer for the perovskite film not only plays an important role in energy-level alignment, but also affects perovskite film morphology, which have a great effect on device performance. In addition, interfacial layers also affect device stability. In this review, recent progress in interfacial engineering for PHJ perovskite solar cells will be reviewed, especially with the molecular interfacial materials. The supporting interfacial layers for the optimization of perovskite films will be systematically reviewed. Finally, the challenges remaining in perovskite solar cells research will be discussed.

Nanostructured Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode for efficient hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Sharma, Dipika; Upadhyay, Sumant; Verma, Anuradha [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Satsangi, Vibha R. [Department of Physics Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 India (India); Shrivastav, Rohit [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Dass, Sahab, E-mail: drsahabdas@gmail.com [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India)

2015-01-01

Nanostructured thin films of pristine Fe{sub 2}O{sub 3}, Ti-doped Fe{sub 2}O{sub 3}, Cu{sub 2}O, and Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-doped Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction were deposited on tin-doped indium oxide (Sn:In{sub 2}O{sub 3}) glass substrate using spray pyrolysis method. Ti doping is done to improve photoelectric conversion efficiency and electrical conductivity of hematite thin films. Further enhanced photocurrent is achieved for Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction electrodes. All samples were characterized using X-ray diffractometry, scanning electron microscopy, atomic force microscopy, and UV-Vis spectrometry. Photoelectrochemical properties were also investigated in a three-electrode cell system. UV-Vis absorption spectrum for pristine Fe{sub 2}O{sub 3}, Ti-Fe{sub 2}O{sub 3}, Cu{sub 2}O, Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction thin films exhibited absorption in visible region. Nanostructured thin films as prepared were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 2.60 mA/cm{sup 2} at 0.95 V/SCE was exhibited by 454 nm thick Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode. Increased photocurrent density and enhanced incident photon-to-electron conversion efficiency, offered by the heterojunction thin films may be attributed to improved conductivity and efficient separation of the photogenerated charge carriers at the Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O interface. - Highlights: • Heterojunction thin films were deposited using spray pyrolysis techniques. • Titanium doping in Fe{sub 2}O{sub 3} played a significant role in PEC response. • Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction shows the absorption in visible range. • Improved charge separation and enhanced PEC response were achieved in Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O.

Silicon heterojunction solar cell passivation in combination with nanocrystalline silicon oxide emitters

NARCIS (Netherlands)

Gatz, H.A.; Rath, J.K.; Verheijen, M.A.; Kessels, W.M.M.; Schropp, R.E.I.

2016-01-01

Silicon heterojunction solar cells (SHJ) are well known for their high efficiencies, enabled by their remarkably high open-circuit voltages (VOC). A key factor in achieving these values is a good passivation of the crystalline wafer interface. One of the restrictions during SHJ solar cell production

An effective medium model versus a network model for nano-structured solar cells

International Nuclear Information System (INIS)

Minnaert, B.; Grasso, C.; Burgelman, M.

2006-01-01

In this paper, two methods are compared to model the I-V curves of nano-structured solar cells. These cells consist of an interpenetrating network of an n-type transparent semiconductor oxide (e.g. TiO 2 ) and a p-type semiconductor absorber (e.g. CdTe, CuInS 2 ), deposited on TCO covered glass. The methods are also applicable when a dye and an electrolyte replace the p-semiconductor, and even to organic bulk heterojunction cells. A network model (NM) with resistors and diodes has been published by us before. Another method which has been proposed in the literature is an effective medium model (EMM). In this model, the whole p-n nano-structure is represented by one single effective semiconductor layer, which then is fed into a standard solar cell device simulator, e.g. SCAPS. In this work, it is shown that the NM and the EMM can describe the same physical structure, when they are set up properly. As an illustration, some problems are described both by EMM and NM, and the results are compared. The EMM in this work confirms the results obtained earlier with a simplified NM (constant R n , R p ): when illuminating the n-side, the structure is tolerant to R n but not to R p ; the interpenetrating geometry is disadvantageous for V oc . (authors)

Transparent back contacts for P3HT:PCBM bulk heterojunction solar cells

International Nuclear Information System (INIS)

Sendova-Vassileva, M; Dikov, H; Popkirov, G; Lazarova, E; Vitanov, P; Gancheva, V; Grancharov, G; Tsocheva, D; Mokreva, P

2014-01-01

A new combination of layers functioning as a transparent contact is proposed and tested in real solar cells. The contacts consist of TiO 2 layers and thin metal layers (Ag, Cu) and are deposited by magnetron sputtering. The optical transmission and electrical conductivity of the transparent contact layers (TCL) are measured. The TCLs are applied as back contacts in bulk heterojunction polymer solar cells deposited on ITO covered glass and consisting of the following layers: ITO/PEDOT:PSS/P3HT:PCBM/back contact. The organic layers are deposited by spin-coating. For comparison, the same bulk heterojunction polymer solar cells are prepared with a sputtered Ag back contact. The first results show a dependence of the current-voltage parameters of the studied solar cells on the thickness of the different component layers of the transparent back contacts. There is a balance that has to be observed between the electrical characteristics of the contacts and their optical transparency. Future plans involve their inclusion as intermediate contacts in tandem organic solar cells.

Morphological Control for High Performance, Solution-Processed Planar Heterojunction Perovskite Solar Cells

KAUST Repository

Eperon, Giles E.

2013-09-09

Organometal trihalide perovskite based solar cells have exhibited the highest efficiencies to-date when incorporated into mesostructured composites. However, thin solid films of a perovskite absorber should be capable of operating at the highest efficiency in a simple planar heterojunction configuration. Here, it is shown that film morphology is a critical issue in planar heterojunction CH3NH3PbI3-xCl x solar cells. The morphology is carefully controlled by varying processing conditions, and it is demonstrated that the highest photocurrents are attainable only with the highest perovskite surface coverages. With optimized solution based film formation, power conversion efficiencies of up to 11.4% are achieved, the first report of efficiencies above 10% in fully thin-film solution processed perovskite solar cells with no mesoporous layer. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficient cascade multiple heterojunction organic solar cells with inverted structure

Science.gov (United States)

Guo, Tingting; Li, Mingtao; Qiao, Zhenfang; Yu, Leiming; Zhao, Jianhong; Feng, Nianjun; Shi, Peiguang; Wang, Xiaoyan; Pu, Xiaoyun; Wang, Hai

2018-05-01

In this work, we demonstrate an efficient cascade multiple heterojunction organic solar cell with inverted structure. By using two donor materials, poly(3-hexylthiosphene) (P3HT) and titanyl phthalocyanine (TiOPc), as well as two acceptor materials, [6,6]-phenyl C61 butyric acid methyl ester (PCBM) and C60, the cascade multiple heterojunctions of P3HT:PCBM/TiOPc:C60/C60 have been constructed. Applying the optimized inverted configuration of FTO/Zinc Tin Oxide (ZTO)/C60 (30 nm)/TiOPc:C60 (1:1.5, 25 nm)/P3HT:PCBM (1:0.8, 100 nm)/MoO3 (4 nm)/Ag, the considerably enhanced open circuit voltage (VOC) and short circuit current (JSC) can be harvested together, and the power conversion efficiency (PCE) is three times higher than that of the control cell with conventional structure. The significant improvements of the inverted cell are mostly due to the broadened spectral absorption and high efficient multi-interface exciton dissociation in the cascade multiple heterojunctions, indicating that the optimized cascade heterojunctions match the inverted structure well.

Nanostructure CdS/ZnO heterojunction configuration for photocatalytic degradation of Methylene blue

Science.gov (United States)

Velanganni, S.; Pravinraj, S.; Immanuel, P.; Thiruneelakandan, R.

2018-04-01

In the present manuscript, thin films of Zinc Oxide (ZnO) have been deposited on a FTO substrate using a simple successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) method. Cadmium Sulphide (CdS) nanoparticles are sensitized over ZnO thin films using SILAR method. The synthesized nanostructured CdS/ZnO heterojunction thin films was characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), High resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and Raman spectroscopy techniques. The band gap of CdS nanoparticles over ZnO nanostructure was found to be about 3.20 eV. The photocatalytic activities of the deposited CdS/ZnO thin films were evaluated by the degradation of methylene blue (MB) in an aqueous solution under sun light irradiation.

Enhanced planar perovskite solar cell efficiency and stability using a perovskite/PCBM heterojunction formed in one step.

Science.gov (United States)

Zhou, Long; Chang, Jingjing; Liu, Ziye; Sun, Xu; Lin, Zhenhua; Chen, Dazheng; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2018-02-08

Perovskite/PCBM heterojunctions are efficient for fabricating perovskite solar cells with high performance and long-term stability. In this study, an efficient perovskite/PCBM heterojunction was formed via conventional sequential deposition and one-step formation processes. Compared with conventional deposition, the one-step process was more facile, and produced a perovskite thin film of substantially improved quality due to fullerene passivation. Moreover, the resulting perovskite/PCBM heterojunction exhibited more efficient carrier transfer and extraction, and reduced carrier recombination. The perovskite solar cell device based on one-step perovskite/PCBM heterojunction formation exhibited a higher maximum PCE of 17.8% compared with that from the conventional method (13.7%). The device also showed exceptional stability, retaining 83% of initial PCE after 60 days of storage under ambient conditions.

Plastic Electronics and Optoelectronics: New Science and Technology from Soluble Semiconducting Polymers and Bulk Heterojunction Solar Cells Fabricated from Soluble Semiconducting Polymers

Science.gov (United States)

2011-11-03

Seifter, A. J. Heeger, Adv. Mater., 23, 1679–1683 (2011). 8. Efficient, Air-Stable Bulk Heterojunction Polymer Solar Cells Using MoOx as the Anode...distribution is unlimited. 13. SUPPLEMENTARY NOTES None 14. ABSTRACT Bulk heterojunction (BHJ) solar cells were invented at UC Santa Barbara after the...Bulk Heterojunction Solar Cells Fabricated from Soluble Semiconducting Polymers Grant number: AFOSR FA9550-08-1-0248 Dr. Charle Lee, Program

Fabrication of Affordable and Sustainable Solar Cells Using NiO/TiO2 P-N Heterojunction

Directory of Open Access Journals (Sweden)

Kingsley O. Ukoba

2018-01-01

Full Text Available The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.

Solution-Processed Organic Solar Cells from Dye Molecules: An Investigation of Diketopyrrolopyrrole:Vinazene Heterojunctions

KAUST Repository

Walker, Bright; Han, Xu; Kim, Chunki; Sellinger, Alan; Nguyen, Thuc-Quyen

2012-01-01

Although one of the most attractive aspects of organic solar cells is their low cost and ease of fabrication, the active materials incorporated into the vast majority of reported bulk heterojunction (BHJ) solar cells include a semiconducting polymer

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

Science.gov (United States)

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode.

Science.gov (United States)

Kim, Namwoo; Um, Han-Don; Choi, Inwoo; Kim, Ka-Hyun; Seo, Kwanyong

2016-05-11

We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.

Charge separation at disordered semiconductor heterojunctions from random walk numerical simulations.

Science.gov (United States)

Mandujano-Ramírez, Humberto J; González-Vázquez, José P; Oskam, Gerko; Dittrich, Thomas; Garcia-Belmonte, Germa; Mora-Seró, Iván; Bisquert, Juan; Anta, Juan A

2014-03-07

Many recent advances in novel solar cell technologies are based on charge separation in disordered semiconductor heterojunctions. In this work we use the Random Walk Numerical Simulation (RWNS) method to model the dynamics of electrons and holes in two disordered semiconductors in contact. Miller-Abrahams hopping rates and a tunnelling distance-dependent electron-hole annihilation mechanism are used to model transport and recombination, respectively. To test the validity of the model, three numerical "experiments" have been devised: (1) in the absence of constant illumination, charge separation has been quantified by computing surface photovoltage (SPV) transients. (2) By applying a continuous generation of electron-hole pairs, the model can be used to simulate a solar cell under steady-state conditions. This has been exploited to calculate open-circuit voltages and recombination currents for an archetypical bulk heterojunction solar cell (BHJ). (3) The calculations have been extended to nanostructured solar cells with inorganic sensitizers to study, specifically, non-ideality in the recombination rate. The RWNS model in combination with exponential disorder and an activated tunnelling mechanism for transport and recombination is shown to reproduce correctly charge separation parameters in these three "experiments". This provides a theoretical basis to study relevant features of novel solar cell technologies.

Bulk heterojunction perovskite solar cells based on room temperature deposited hole-blocking layer: Suppressed hysteresis and flexible photovoltaic application

Science.gov (United States)

Chen, Zhiliang; Yang, Guang; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Ma, Junjie; Wang, Hao; Fang, Guojia

2017-05-01

Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C61-butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively.

Plasma treatment of ITO films for the formation of nanoparticles toward scalable production of novel nanostructure-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Xu, Cigang; Bailey, Louise R.; Proudfoot, Gary; Cooke, Mike [Oxford Instruments Plasma Technology, Bristol (United Kingdom); Eisenhawer, Bjoern; Jia, Guobin; Bergmann, Joachim; Falk, Fritz [Leibniz Institute of Photonic Technology, Jena (Germany); Ulyashin, Alexander [Department of Industrial Processes, SINTEF, Oslo (Norway)

2015-01-01

Plasma treatment of indium tin oxide (ITO) has been studied to form metallic nanoparticles (NPs) for nanostructure-based solar cells. It is demonstrated that NPs can be formed at temperatures as low as 100 C, and the size of NPs increases with temperature. An ITO layer treated at 100 C has higher transmission than that treated at 200 C for the same time. It is suggested that such NPs can be used for the conversion efficiency enhancement of ITO/Si heterojunction solar cells. It is also shown that NPs can be produced on different substrates covered by an ITO layer, such as ITO/Al foil, ITO/glass, ITO/stainless steel, and ITO/Si, where the resulting NPs were used for catalytic growth of Si nanowires (NWs). The morphology and density of Si NWs depend on a substrate. It is established that p-doped Si NWs show larger diameters, and n-doped Si NWs do not show obvious change of diameters compared to undoped Si NWs. New types of solar cell structures with combined radial and axial junctions have been proposed. As an example, p-n junction-based 3D structures using the NPs obtained from treatment of ITO film are presented. Finally, a potentially scalable process flow for fabrication of nanostructure-based solar cells is discussed. Schematic illustration of fabrication steps to produce the proposed novel solar cell with combined radial and axial junctions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

Directory of Open Access Journals (Sweden)

Miao Tan

2017-08-01

Full Text Available We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i the work function of the transparent conductive oxide layer, (ii the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si interface, (iii the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H layer, and (iv the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

Science.gov (United States)

Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

2017-08-01

We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Shao-Ze Tseng

2014-01-01

Full Text Available This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

Progress and Design Concerns of Nanostructured Solar Energy Harvesting Devices.

Science.gov (United States)

Leung, Siu-Fung; Zhang, Qianpeng; Tavakoli, Mohammad Mahdi; He, Jin; Mo, Xiaoliang; Fan, Zhiyong

2016-05-01

Integrating devices with nanostructures is considered a promising strategy to improve the performance of solar energy harvesting devices such as photovoltaic (PV) devices and photo-electrochemical (PEC) solar water splitting devices. Extensive efforts have been exerted to improve the power conversion efficiencies (PCE) of such devices by utilizing novel nanostructures to revolutionize device structural designs. The thicknesses of light absorber and material consumption can be substantially reduced because of light trapping with nanostructures. Meanwhile, the utilization of nanostructures can also result in more effective carrier collection by shortening the photogenerated carrier collection path length. Nevertheless, performance optimization of nanostructured solar energy harvesting devices requires a rational design of various aspects of the nanostructures, such as their shape, aspect ratio, periodicity, etc. Without this, the utilization of nanostructures can lead to compromised device performance as the incorporation of these structures can result in defects and additional carrier recombination. The design guidelines of solar energy harvesting devices are summarized, including thin film non-uniformity on nanostructures, surface recombination, parasitic absorption, and the importance of uniform distribution of photo-generated carriers. A systematic view of the design concerns will assist better understanding of device physics and benefit the fabrication of high performance devices in the future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoanodic Hybrid Semiconductor–Molecular Heterojunction for Solar Water Oxidation

KAUST Repository

Joya, Khurram Saleem

2015-06-29

Inorganic photo-responsive semiconducting materials have been employed in photoelectrochemical(PEC) water oxidation devicesin pursuit of solar to fuel conversion.[1]The reaction kinetics in semiconductors is limited by poor contact at the interfaces, and charge transfer is impeded by surface defects and the grain boundaries.[2]It has shown that successful surface functionalization of the photo-responsive semiconducting materials with co-catalysts can maximize the charge separation, hole delivery and its effective consumption, and enhances the efficiency and performane of the PEC based water oxidation assembly.[3]We present here unique modification of photoanodic hematite (α-Fe2O3) and bismuth vanadate (BiVO4) with molecular co-catalysts for enhanced photoelectrochemical water oxidation (Figure 1). These hybrid inorganic–organometallic heterojunctions manifest impressive cathodic shifts in the onset potentials, and the photocurrent densities have been enhanced by > 90% at all potentials relative to uncatalyzed α-Fe2O3 or BiVO4, and other catalyst-semiconductor based heterojunctions.This is a novel development in the solar to fuel conversion field, and is crucially important for designing a tandem device where light interfere very little with the catalyst layer on top of semiconducting light absorber.

Mesoscopic CH 3 NH 3 PbI 3 /TiO 2 Heterojunction Solar Cells

KAUST Repository

Etgar, Lioz

2012-10-24

We report for the first time on a hole conductor-free mesoscopic methylammonium lead iodide (CH 3NH 3PbI 3) perovskite/TiO 2 heterojunction solar cell, produced by deposition of perovskite nanoparticles from a solution of CH 3NH 3I and PbI 2 in γ-butyrolactone on a 400 nm thick film of TiO 2 (anatase) nanosheets exposing (001) facets. A gold film was evaporated on top of the CH 3NH 3PbI 3 as a back contact. Importantly, the CH 3NH 3PbI 3 nanoparticles assume here simultaneously the roles of both light harvester and hole conductor, rendering superfluous the use of an additional hole transporting material. The simple mesoscopic CH 3NH 3PbI 3/TiO 2 heterojunction solar cell shows impressive photovoltaic performance, with short-circuit photocurrent J sc= 16.1 mA/cm 2, open-circuit photovoltage V oc = 0.631 V, and a fill factor FF = 0.57, corresponding to a light to electric power conversion efficiency (PCE) of 5.5% under standard AM 1.5 solar light of 1000 W/m 2 intensity. At a lower light intensity of 100W/m 2, a PCE of 7.3% was measured. The advent of such simple solution-processed mesoscopic heterojunction solar cells paves the way to realize low-cost, high-efficiency solar cells. © 2012 American Chemical Society.

Effects of Germanium Tetrabromide Addition to Zinc Tetraphenyl Porphyrin / Fullerene Bulk Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Atsushi Suzuki

2014-03-01

Full Text Available The effects of germanium tetrabromide addition to tetraphenyl porphyrin zinc (Zn-TPP/fullerene (C60 bulk heterojunction solar cells were characterized. The light-induced charge separation and charge transfer were investigated by current density and optical absorption. Addition of germanium tetrabromide inserted into active layer of Zn-TPP/C60 as bulk heterojunction had a positive effect on the photovoltaic and optical properties. The photovoltaic mechanism of the solar cells was discussed by experimental results. The photovoltaic performance was due to light-induced exciton promoted by insert of GeBr4 and charge transfer from HOMO of Zn-TPP to LUMO of C60 in the active layer.

Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Zhang Xiao-Zhou

2012-01-01

Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.

Different Device Architectures for Bulk-Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Getachew Adam

2016-08-01

Full Text Available We report different solar cell designs which allow a simple electrical connection of subsequent devices deposited on the same substrate. By arranging so-called standard and inverted solar-cell architectures next to each other, a serial connection of the two devices can easily be realized by a single compound electrode. In this work, we tested different interfacial layer materials like polyethylenimine (PEI and PEDOT:PSS, and silver as a non-transparent electrode material. We also built organic light emitting diodes applying the same device designs demonstrating the versatility of applied layer stacks. The proposed design should allow the preparation of organic bulk-heterojunction modules with minimized photovoltaically inactive regions at the interconnection of individual devices.

Hybrid Perovskite/Perovskite Heterojunction Solar Cells.

Science.gov (United States)

Hu, Yinghong; Schlipf, Johannes; Wussler, Michael; Petrus, Michiel L; Jaegermann, Wolfram; Bein, Thomas; Müller-Buschbaum, Peter; Docampo, Pablo

2016-06-28

Recently developed organic-inorganic hybrid perovskite solar cells combine low-cost fabrication and high power conversion efficiency. Advances in perovskite film optimization have led to an outstanding power conversion efficiency of more than 20%. Looking forward, shifting the focus toward new device architectures holds great potential to induce the next leap in device performance. Here, we demonstrate a perovskite/perovskite heterojunction solar cell. We developed a facile solution-based cation infiltration process to deposit layered perovskite (LPK) structures onto methylammonium lead iodide (MAPI) films. Grazing-incidence wide-angle X-ray scattering experiments were performed to gain insights into the crystallite orientation and the formation process of the perovskite bilayer. Our results show that the self-assembly of the LPK layer on top of an intact MAPI layer is accompanied by a reorganization of the perovskite interface. This leads to an enhancement of the open-circuit voltage and power conversion efficiency due to reduced recombination losses, as well as improved moisture stability in the resulting photovoltaic devices.

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Applied research on 2-6 compound materials for heterojunction solar cells

Science.gov (United States)

Bube, R. H.

1975-01-01

Several II-VI heterojunctions show promise for photovoltaic conversion of solar energy. The three of greatest interest are p-CdTe/n-CdS, p-CdTe/n-ZnSe, and p-ZnTe/n-CdSe. Several p-CdTe/n-CdS heterojunction cells have been prepared by close spaced transport deposition of p-CdTe on single crystal n-CdS, and by two source vacuum evaporation of n-CdS on single crystal p-CdTe. Both types of cells, in an experimental stage, are quite comparable, exhibiting values of quantum efficiency between 0.5 and 0.9, open circuit voltages between 0.50 and 0.66 V, fill factors between 0.4 and 0.6, and solar efficiencies up to 4 percent. Cells of p-ZnTe/n-CdSe have also been made by close spaced vapor transport deposition of n-CdSe on single crystal p-ZnTe.

Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

International Nuclear Information System (INIS)

Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Graetzel, Michael; Sargent, Edward H.

2011-01-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum.

The generalized Shockley-Queisser limit for nanostructured solar cells

Science.gov (United States)

Xu, Yunlu; Gong, Tao; Munday, Jeremy N.

2015-09-01

The Shockley-Queisser limit describes the maximum solar energy conversion efficiency achievable for a particular material and is the standard by which new photovoltaic technologies are compared. This limit is based on the principle of detailed balance, which equates the photon flux into a device to the particle flux (photons or electrons) out of that device. Nanostructured solar cells represent a novel class of photovoltaic devices, and questions have been raised about whether or not they can exceed the Shockley-Queisser limit. Here we show that single-junction nanostructured solar cells have a theoretical maximum efficiency of ˜42% under AM 1.5 solar illumination. While this exceeds the efficiency of a non-concentrating planar device, it does not exceed the Shockley-Queisser limit for a planar device with optical concentration. We consider the effect of diffuse illumination and find that with optical concentration from the nanostructures of only × 1,000, an efficiency of 35.5% is achievable even with 25% diffuse illumination. We conclude that nanostructured solar cells offer an important route towards higher efficiency photovoltaic devices through a built-in optical concentration.

Flexible organic solar cells including efficiency enhancing grating structures

International Nuclear Information System (INIS)

De Oliveira Hansen, Roana Melina; Liu Yinghui; Madsen, Morten; Rubahn, Horst-Günter

2013-01-01

In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques, such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption enhancement. Since the solar cells avoid using brittle electrodes, the performance of the flexible devices is not affected by the peeling process. We have investigated three different nanostructured grating designs and conclude that gratings with a 500 nm pitch distance have the highest light-trapping efficiency for the selected active layer material (P3HT:PCBM), resulting in an enhancement of about 34% on the solar cell efficiency. The presented method can be applied to a large variety of flexible nanostructured devices in future applications. (paper)

Enhanced blue responses in nanostructured Si solar cells by shallow doping

Science.gov (United States)

Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

2018-03-01

Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

Toward Highly Efficient Nanostructured Solar Cells Using Concurrent Electrical and Optical Design

KAUST Repository

Wang, Hsin-Ping

2017-07-11

Recent technological advances in conventional planar and microstructured solar cell architectures have significantly boosted the efficiencies of these devices near the corresponding theoretical values. Nanomaterials and nanostructures have promising potential to push the theoretical limits of solar cell efficiency even higher using the intrinsic advantages associated with these materials, including efficient photon management, rapid charge transfer, and short charge collection distances. However, at present the efficiency of nanostructured solar cells remains lower than that of conventional solar devices due to the accompanying losses associated with the employment of nanomaterials. The concurrent design of both optical and electrical components will presumably be an imperative route toward breaking the present-day limit of nanostructured solar cells. This review summarizes the losses in traditional solar cells, and then discusses recent advances in applications of nanotechnology to solar devices from both optical and electrical perspectives. Finally, a rule for nanostructured solar cells by concurrently engineering the optical and electrical design is devised. Following these guidelines should allow for exceeding the theoretical limit of solar cell efficiency soon.

Charge Carrier Generation, Recombination, and Extraction in Polymer–Fullerene Bulk Heterojunction Organic Solar Cells

KAUST Repository

Laquai, Fré dé ric; Andrienko, Denis; Deibel, Carsten; Neher, Dieter

2016-01-01

In this chapter we review the basic principles of photocurrent generation in bulk heterojunction organic solar cells, discuss the loss channels limiting their efficiency, and present case studies of several polymer–fullerene blends. Using steady-state and transient, optical, and electrooptical techniques, we create a precise picture of the fundamental processes that ultimately govern solar cell efficiency.

Charge Carrier Generation, Recombination, and Extraction in Polymer–Fullerene Bulk Heterojunction Organic Solar Cells

KAUST Repository

Laquai, Frederic

2016-12-20

In this chapter we review the basic principles of photocurrent generation in bulk heterojunction organic solar cells, discuss the loss channels limiting their efficiency, and present case studies of several polymer–fullerene blends. Using steady-state and transient, optical, and electrooptical techniques, we create a precise picture of the fundamental processes that ultimately govern solar cell efficiency.

Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

Science.gov (United States)

Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

1983-05-01

The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

KAUST Repository

Eisner, Flurin

2018-04-25

We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell\\'s performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode\\'s work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

KAUST Repository

Eisner, Flurin; Seitkhan, Akmaral; Han, Yang; Khim, Dongyoon; Yengel, Emre; Kirmani, Ahmad R.; Xu, Jixian; Garcí a de Arquer, F. Pelayo; Sargent, Edward H.; Amassian, Aram; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

2018-01-01

We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell's performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode's work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

KAUST Repository

Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Grä tzel, Michael; Sargent, Edward H.

2011-01-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

KAUST Repository

Kramer, Illan J.

2011-08-01

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

Spin-cast bulk heterojunction solar cells: A dynamical investigation

KAUST Repository

Chou, Kang Wei

2013-02-22

Spin-coating is extensively used in the lab-based manufacture of organic solar cells, including most of the record-setting solution-processed cells. We report the first direct observation of photoactive layer formation as it occurs during spin-coating. The study provides new insight into mechanisms and kinetics of bulk heterojunction formation, which may be crucial for its successful transfer to scalable printing processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin-cast bulk heterojunction solar cells: A dynamical investigation

KAUST Repository

Chou, Kang Wei; Yan, Buyi; Li, Ruipeng; Li, Erqiang; Zhao, Kui; Anjum, Dalaver H.; Alvarez, Steven; Gassaway, Robert; Biocca, Alan K.; Thoroddsen, Sigurdur T; Hexemer, Alexander; Amassian, Aram

2013-01-01

Spin-coating is extensively used in the lab-based manufacture of organic solar cells, including most of the record-setting solution-processed cells. We report the first direct observation of photoactive layer formation as it occurs during spin-coating. The study provides new insight into mechanisms and kinetics of bulk heterojunction formation, which may be crucial for its successful transfer to scalable printing processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CuO-PANI nanostructure with tunable spectral selectivity for solar selective coating application

Energy Technology Data Exchange (ETDEWEB)

Cindrella, L., E-mail: cind@nitt.edu; Prabhu, S., E-mail: sprabhuk@gmail.com

2016-08-15

Highlights: • CuO-PANI nanostructure has been reported as the solar selective absorber coating. • Solar selectivity and efficiency of the coatings have been evaluated. • PANI provides a surface texture favourable for multiple reflection. - Abstract: CuO-PANI nanostructure has been demonstrated as the solar selective absorber coating for the first time. The effortless chemical methods and easily scalable techniques such as precipitation, in-situ polymerization and spray coating were adopted for the fabrication of CuO nanorods and CuO-PANI nanostructures for solar application. The synthesis was carried out without using any template. The morphology and phase structure of fabricated CuO nanorods and CuO-PANI nanostructure coatings were studied by atomic force microscopy, scanning electron microscopy and X-ray diffraction analysis. The energy dispersive X-ray spectra and elemental mapping confirm the presence of the chosen elements in the nanostructure. The solar absorptance (α{sub s}), thermal emittance (ε{sub t}) and selectivity (ξ) of the nanostructure coatings on glass substrate were optimized to 0.94, 0.01 and 94 respectively by changing the polyaniline content on the surface of the CuO nanorods. The efficiency of the solar selective coatings were evaluated. The optimized solar absorber coating of CuO-PANI nanostructure is highly promising for its selective optical properties.

Structural transformations of TiO{sub 2} films with deposition temperature and electrical properties of nanostructure n-TiO{sub 2}/p-Si heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Aksoy, Seval; Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr

2014-11-15

Highlights: • Titanium oxide (TiO{sub 2}) films have been deposited on p-Si substrates by sol gel spin coating technique. • The effect of deposition temperatures on structural and morphological properties of TiO{sub 2} films. • The electrical parameters of nanostructure n-TiO{sub 2}/p-Si heterojunction diode such as n, R{sub s} and ϕ{sub b} were investigated. - Abstract: Titanium oxide (TiO{sub 2}) films have been deposited on p-Si substrates by sol–gel method using spin coating technique. Structural and morphological properties were studied as a function of deposition temperatures by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The deposition temperatures were chosen from 700 °C to 1100 °C. Crystallization of the anatase phase and its transformation to the rutile phase were observed at 700 °C and 800 °C, respectively. The fabrication of nanostructure n-TiO{sub 2}/p-Si heterojunction diode was formed by using T7 film deposited at 700 °C. The electrical parameters such as barrier height (ϕ{sub b}) and ideality factor (n) of nanostructure n-TiO{sub 2}/p-Si heterojunction diode were investigated by using I–V measurements and observed to be 0.58 eV and 5.39, respectively. Also, the values of ϕ{sub b} and series resistance (R{sub s}) were determined by using Cheung’s and Norde methods. From the I–V measurements taken at room temperature, the space charge limited (SCLC) mechanism was determined at the low voltage region. The obtained results showed that n-TiO{sub 2}/p-Si heterojunction diode is a good candidate for the applications of semiconductor electronic devices.

Design rules for donors in bulk-heterojunction solar cells - towards 10 % energy-conversion efficiency

Energy Technology Data Exchange (ETDEWEB)

Scharber, M.C.; Muehlbacher, D.; Koppe, M.; Denk, P.; Waldauf, C.; Brabec, C.J. [Konarka Austria, Altenbergerstrasse 69, A-4040 Linz (Austria); Heeger, A.J. [Department of Materials Science, Broida Hall 6125, University of California at Santa Barbara, Santa Barbara, CA 3106-5090 (United States)

2006-03-17

For bulk-heterojunction photovoltaic cells fabricated from conjugated polymers and a fullerene derivative, the relation between the open-circuit voltage (V{sub oc}) and the oxidation potential for different conjugated polymers is studied. A linear relation between V{sub oc} and the oxidation potential is found (see figure). Based on this relation, the energy-conversion efficiency of a bulk-heterojunction solar cell is derived as a function of the bandgap and the energy levels of the conjugated polymer. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Barium: An Efficient Cathode Layer for Bulk-heterojunction Solar Cells

Science.gov (United States)

Gupta, Vinay; Kyaw, Aung Ko Ko; Wang, Dong Hwan; Chand, Suresh; Bazan, Guillermo C.; Heeger, Alan J.

2013-01-01

We report Barium (Ba) cathode layer for bulk-heterojunction solar cells which enhanced the fill factor (FF) of p-DTS(FBTTh2)2/PC71BM BHJ solar cell up to 75.1%, one of the highest value reported for an organic solar cell. The external quantum efficiency exceeds 80%. Analysis of recombination mechanisms using the current-voltage (J–V) characteristics at various light intensities in the BHJ solar cell layer reveals that Ba prevents trap assisted Shockley-Read-Hall (SRH) recombination at the interface and with different thicknesses of the Ba, the recombination shifts towards bimolecular from monomolecular. Moreover, Ba increases shunt resistance and decreases the series resistance significantly. This results in an increase in the charge collection probability leading to high FF. This work identifies a new cathode interlayer which outclasses the all the reported interlayers in increasing FF leading to high power conversion efficiency and have significant implications in improving the performance of BHJ solar cells. PMID:23752562

Preparation of ZnS microdisks using chemical bath deposition and ZnS/p-Si heterojunction solar cells

Science.gov (United States)

Hsiao, Y. J.; Meen, T. H.; Ji, L. W.; Tsai, J. K.; Wu, Y. S.; Huang, C. J.

2013-10-01

The synthesis and heterojunction solar cell properties of ZnS microdisks prepared by the chemical bath deposition method were investigated. The ZnS deposited on the p-Si blanket substrate exhibits good coverage. The lower reflectance spectra were found as the thickness of the ZnS film increased. The optical absorption spectra of the 80 °C ZnS microdisk exhibited a band-gap energy of 3.4 eV and the power conversion efficiency (PCE) of the AZO/ZnS/p-Si heterojunction solar cell with a 300 nm thick ZnS film was η=2.72%.

An anomalous behavior in degraded bulk heterojunction organic solar cells

International Nuclear Information System (INIS)

Singh, Vinamrita; Tandon, Ram Pal; Arora, Swati; Kumar, Pankaj; Bhatnagar, Pramod Kumar; Arora, Manoj

2011-01-01

An anomalous behavior—a change in polarity with the passage of time in the bulk heterojunction poly(3-hexylthiophene) (P3HT):6,6-phenylC61 butyric acid methyl ester (PCBM) organic solar cells—is reported here. This work is a continuation of our previous work where the initial degradation of the organic solar cells, freshly prepared up to 4 h, was mainly due to domain formation in the active layer. With the passage of time, the activity at the interfaces starts becoming significant. A decrease of V OC and J SC , leading to a change in polarity, has been reported and explained up to 300 h after fabrication.

A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

KAUST Repository

Chavali, Raghu Vamsi Krishna; Li, Jian V.; Battaglia, Corsin; De Wolf, Stefaan; Gray, Jeffery Lynn; Alam, Muhammad Ashraful

2016-01-01

Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns

p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

Science.gov (United States)

Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

2014-04-23

In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

KAUST Repository

Chavali, Raghu Vamsi Krishna

2016-11-30

Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.

3-D modelling of a bilayer heterojunction organic solar cell based on ...

African Journals Online (AJOL)

The thin film multilayer stacking theory is applied to the bilayer heterojunction organic solar cell, with the optical matrix of the Abeles theory leading to new expression of generation rate and density of exciton photogenerated in the organic photoactive layer of CuPc/C60. The excitons density is investigated considering the ...

Heterojunction Structures for Photon Detector Applications

Science.gov (United States)

2014-07-21

IR: Fourier-transform infrared FTO: Fluorine doped tin oxide G-R: generation-recombination HEIWIP: heterojunction interfacial workfunction internal...SECURITY CLASSIFICATION OF: The work presented here report findings in (1) infrared detectors based on p-GaAs/AlGaAs heterojunctions , (2) J and H...aggregate sensitized heterojunctions for solar cell and photon detection applications, (3) heterojunctions sensitized with quantum dots as low cost

Compositional engineering of acceptors for highly efficient bulk heterojunction hybrid organic solar cells.

Science.gov (United States)

Amber Yousaf, S; Ikram, M; Ali, S

2018-10-01

The wet chemical synthesis of chromium oxide (Cr 2 O 3 ) nanoparticles (NPs) and its application in active layer of inverted bulk heterojunction organic solar cells is documented in this research. Chromium oxide NPs of 10-30 nm size range having a band gap of 2.9 eV were successfully synthesized. These NPs were used in inverted organic solar cells in amalgamation with P3HT:PCBM and PTB7:PCBM polymers. The fabricated hybrid devices improves PCE significantly for P3HT:PCBM and PTB7:PCBM systems. The photophysical energy levels, optoelectrical properties and microscopic images have been systematically studied for the fabricated devices. The introduction of Cr 2 O 3 nanoparticles (NPs) enhances light harvesting and tunes energy levels into improved electrical parameters. A clear red shift and improved absorption have been observed for ternary blended devices compared to that observed with controlled organic solar cells. Apparently, when the amount of NPs in the binary polymer blend exceeds the required optimum level, there is a breakdown of the bulk heterojunction leading to lowering of the optical and electrical performance of the devices. Copyright © 2018 Elsevier Inc. All rights reserved.

Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells

Science.gov (United States)

Wang, Zi Shuai; Sha, Wei E. I.; Choy, Wallace C. H.

2016-12-01

Modeling the charge-generation process is highly important to understand device physics and optimize power conversion efficiency of bulk-heterojunction organic solar cells (OSCs). Free carriers are generated by both ultrafast exciton delocalization and slow exciton diffusion and dissociation at the heterojunction interface. In this work, we developed a systematic numerical simulation to describe the charge-generation process by a modified drift-diffusion model. The transport, recombination, and collection of free carriers are incorporated to fully capture the device response. The theoretical results match well with the state-of-the-art high-performance organic solar cells. It is demonstrated that the increase of exciton delocalization ratio reduces the energy loss in the exciton diffusion-dissociation process, and thus, significantly improves the device efficiency, especially for the short-circuit current. By changing the exciton delocalization ratio, OSC performances are comprehensively investigated under the conditions of short-circuit and open-circuit. Particularly, bulk recombination dependent fill factor saturation is unveiled and understood. As a fundamental electrical analysis of the delocalization mechanism, our work is important to understand and optimize the high-performance OSCs.

Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector

Science.gov (United States)

Ren, Rui; Zhong, Zheng

2018-06-01

This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

Science.gov (United States)

Heremans, Paul; Cheyns, David; Rand, Barry P

2009-11-17

Thin-film blends or bilayers of donor- and acceptor-type organic semiconductors form the core of heterojunction organic photovoltaic cells. Researchers measure the quality of photovoltaic cells based on their power conversion efficiency, the ratio of the electrical power that can be generated versus the power of incident solar radiation. The efficiency of organic solar cells has increased steadily in the last decade, currently reaching up to 6%. Understanding and combating the various loss mechanisms that occur in processes from optical excitation to charge collection should lead to efficiencies on the order of 10% in the near future. In organic heterojunction solar cells, the generation of photocurrent is a cascade of four steps: generation of excitons (electrically neutral bound electron-hole pairs) by photon absorption, diffusion of excitons to the heterojunction, dissociation of the excitons into free charge carriers, and transport of these carriers to the contacts. In this Account, we review our recent contributions to the understanding of the mechanisms that govern these steps. Starting from archetype donor-acceptor systems of planar small-molecule heterojunctions and solution-processed bulk heterojunctions, we outline our search for alternative materials and device architectures. We show that non-planar phthalocynanines have appealing absorption characteristics but also have reduced charge carrier transport. As a result, the donor layer needs to be ultrathin, and all layers of the device have to be tuned to account for optical interference effects. Using these optimization techniques, we illustrate cells with 3.1% efficiency for the non-planar chloroboron subphthalocyanine donor. Molecules offering a better compromise between absorption and carrier mobility should allow for further improvements. We also propose a method for increasing the exciton diffusion length by converting singlet excitons into long-lived triplets. By doping a polymer with a

Silicon nanowire array architecture for heterojunction electronics

International Nuclear Information System (INIS)

Solovan, M. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Orletskyi, I. G.; Kovaliuk, T. T.; Abashin, S. L.

2017-01-01

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V_o_c = 0.8 V, short-circuit current I_s_c = 3.72 mA/cm"2 and fill factor FF = 0.5 under illumination of 100 mW/cm"2.

Silicon nanostructures-induced photoelectrochemical solar water splitting for energy applications

Energy Technology Data Exchange (ETDEWEB)

Dadwal, U.; Singh, R. [Nanoscale Research Facility (NRF), Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India); Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India); Ranjan, Neha [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi-110025 (India)

2016-05-23

We study the photoelectrochemical (PEC) solar water splitting assisted with synthesized nanostructures. Si nanowires decorated with silver dendrite nanostructures have been synthesized using metal assisted wet chemical etching of (100) Si wafer. Etching has been carried out in an aqueous solution consisting of 5M HF and 0.02M AgNO{sub 3}. Investigations showed that such type of semiconductor nanostructures act as efficient working electrodes for the splitting of normal water in PEC method. An enhancement in the photon-to-current conversion efficiency and solar-to-hydrogen evolution was observed for obtaining a practical source of clean and renewable fuel.

Design of Novel Metal Nanostructures for Broadband Solar Energy Conversion

Directory of Open Access Journals (Sweden)

Kristine A. Zhang

2015-01-01

Full Text Available Solar power holds great potential as an alternative energy source, but current photovoltaic cells have much room for improvement in cost and efficiency. Our objective was to develop metal nanostructures whose surface plasmon resonance (SPR spectra closely match the solar spectrum to enhance light absorption and scattering. We employed the finite-difference time-domain simulation method to evaluate the effect of varying key parameters. A novel nanostructure with SPR absorption matching a region of the solar spectrum (300 to 1500 nm that contains 90% of solar energy was successfully designed. This structure consists of a large gold-silica core-shell structure with smaller gold nanoparticles and nanorods on its surface. Such complex nanostructures are promising for broad and tunable absorption spectra. In addition, we investigated the SPR of silver nanoparticle arrays, which can achieve scattering close to the solar spectrum. We demonstrated an improvement in efficiency of over 30% with optimal nanoparticle radius and periods of 75 nm and 325 nm, respectively. In combination, our studies enable high-efficiency, tunable, and cost-effective enhancement of both light absorption and scattering, which has potential applications in solar energy conversion as well as biomedical imaging.

Charge transport and recombination dynamics in organic bulk heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Baumann, Andreas

2011-08-02

The charge transport in disordered organic bulk heterojunction (BHJ) solar cells is a crucial process affecting the power conversion efficiency (PCE) of the solar cell. With the need of synthesizing new materials for improving the power conversion efficiency of those cells it is important to study not only the photophysical but also the electrical properties of the new material classes. Thereby, the experimental techniques need to be applicable to operating solar cells. In this work, the conventional methods of transient photoconductivity (also known as ''Time-of-Flight'' (TOF)), as well as the transient charge extraction technique of ''Charge Carrier Extraction by Linearly Increasing Voltage'' (CELIV) are performed on different organic blend compositions. Especially with the latter it is feasible to study the dynamics - i.e. charge transport and charge carrier recombination - in bulk heterojunction (BHJ) solar cells with active layer thicknesses of 100-200 nm. For a well performing organic BHJ solar cells the morphology is the most crucial parameter finding a trade-off between an efficient photogeneration of charge carriers and the transport of the latter to the electrodes. Besides the morphology, the nature of energetic disorder of the active material blend and its influence on the dynamics are discussed extensively in this work. Thereby, the material system of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C{sub 61}butyric acid methyl ester (PC{sub 61}BM) serves mainly as a reference material system. New promising donor or acceptor materials and their potential for application in organic photovoltaics are studied in view of charge dynamics and compared with the reference system. With the need for commercialization of organic solar cells the question of the impact of environmental conditions on the PCE of the solar cells raises. In this work, organic BHJ solar cells exposed to synthetic air for finite duration are

Increased Efficiency of Solar Cells Protected by Hydrophobic and Hydrophilic Anti-Reflecting Nanostructured Glasses.

Science.gov (United States)

Baquedano, Estela; Torné, Lorena; Caño, Pablo; Postigo, Pablo A

2017-12-14

We investigated the fabrication of large-area (cm²) nanostructured glasses for solar cell modules with hydrophobic and hydrophilic properties using soft lithography and colloidal lithography. Both of these techniques entail low-cost and ease of nanofabrication. We explored the use of simple 1D and 2D nanopatterns (nanowires and nanocones) and the effect of introducing disorder in the nanostructures. We observed an increase in the transmitted light for ordered nanostructures with a maximum value of 99% for wavelengths >600 nm when ordered nanocones are fabricated on the two sides of the solar glass. They produced an increment in the efficiency of the packaged solar cell with respect to the glass without nanostructures. On the one hand, the wettability properties showed that the ordering of the nanostructures improved the hydrophobicity of the solar glasses and increased their self-cleaning capacity. On the other hand, the disordered nanostructures improved the hydrophilic properties of solar glasses, increasing their anti-fogging capacity. The results show that by selecting the appropriate nanopattern, the wettability properties (hydrophobic or hydrophilic) can be easily improved without decreasing the efficiency of the solar cell underneath.

Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

KAUST Repository

Pattantyus-Abraham, Andras G.

2010-06-22

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power conversion efficiencies. Two distinct device architectures and operating mechanisms have been advanced. The first-the Schottky device-was optimized and explained in terms of a depletion region driving electron-hole pair separation on the semiconductor side of a junction between an opaque low-work-function metal and a p-type CQD film. The second-the excitonic device-employed a CQD layer atop a transparent conductive oxide (TCO) and was explained in terms of diffusive exciton transport via energy transfer followed by exciton separation at the type-II heterointerface between the CQD film and the TCO. Here we fabricate CQD photovoltaic devices on TCOs and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation, and that they also exploit the large bandgap of the TCO to improve rectification and block undesired hole extraction. The resultant depletedheterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS CQDs, enabling broadband harvesting of the solar spectrum. We report the highest opencircuit voltages observed in solid-state CQD solar cells to date, as well as fill factors approaching 60%, through the combination of efficient hole blocking (heterojunction) and very small minority carrier density (depletion) in the large-bandgap moiety. © 2010 American Chemical Society.

Broadband solar absorption enhancement via periodic nanostructuring of electrodes.

KAUST Repository

Adachi, Michael M; Labelle, André J; Thon, Susanna M; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H

2013-01-01

Solution processed colloidal quantum dot (CQD) solar cells have great potential for large area low-cost photovoltaics. However, light utilization remains low mainly due to the tradeoff between small carrier transport lengths and longer infrared photon absorption lengths. Here, we demonstrate a bottom-illuminated periodic nanostructured CQD solar cell that enhances broadband absorption without compromising charge extraction efficiency of the device. We use finite difference time domain (FDTD) simulations to study the nanostructure for implementation in a realistic device and then build proof-of-concept nanostructured solar cells, which exhibit a broadband absorption enhancement over the wavelength range of λ = 600 to 1,100 nm, leading to a 31% improvement in overall short-circuit current density compared to a planar device containing an approximately equal volume of active material. Remarkably, the improved current density is achieved using a light-absorber volume less than half that typically used in the best planar devices.

Broadband solar absorption enhancement via periodic nanostructuring of electrodes.

KAUST Repository

Adachi, Michael M

2013-10-14

Solution processed colloidal quantum dot (CQD) solar cells have great potential for large area low-cost photovoltaics. However, light utilization remains low mainly due to the tradeoff between small carrier transport lengths and longer infrared photon absorption lengths. Here, we demonstrate a bottom-illuminated periodic nanostructured CQD solar cell that enhances broadband absorption without compromising charge extraction efficiency of the device. We use finite difference time domain (FDTD) simulations to study the nanostructure for implementation in a realistic device and then build proof-of-concept nanostructured solar cells, which exhibit a broadband absorption enhancement over the wavelength range of λ = 600 to 1,100 nm, leading to a 31% improvement in overall short-circuit current density compared to a planar device containing an approximately equal volume of active material. Remarkably, the improved current density is achieved using a light-absorber volume less than half that typically used in the best planar devices.

Angle resolved characterization of nanostructured and conventionally textured silicon solar cells

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Ormstrup, Jeppe; Ommen, Martin Lind

2015-01-01

current, open circuit voltage, fill factor (FF) and power conversion efficiency are each measured as function of the relative incident angle between the solar cell and the light source. The relative incident angle is varied from 0° to 90° in steps of 10° in orthogonal axes, such that each solar cell......We report angle resolved characterization of nanostructured and conventionally textured silicon solar cells. The nanostructured solar cells are realized through a single step, mask-less, scalable reactive ion etching (RIE) texturing of the surface. Photovoltaic properties including short circuit...

Buried MoO x/Ag Electrode Enables High-Efficiency Organic/Silicon Heterojunction Solar Cells with a High Fill Factor.

Science.gov (United States)

Xia, Zhouhui; Gao, Peng; Sun, Teng; Wu, Haihua; Tan, Yeshu; Song, Tao; Lee, Shuit-Tong; Sun, Baoquan

2018-04-25

Silicon (Si)/organic heterojunction solar cells based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type Si have attracted wide interests because they promise cost-effectiveness and high-efficiency. However, the limited conductivity of PEDOT:PSS leads to an inefficient hole transport efficiency for the heterojunction device. Therefore, a high dense top-contact metal grid electrode is required to assure the efficient charge collection efficiency. Unfortunately, the large metal grid coverage ratio electrode would lead to undesirable optical loss. Here, we develop a strategy to balance PEDOT:PSS conductivity and grid optical transmittance via a buried molybdenum oxide/silver grid electrode. In addition, the grid electrode coverage ratio is optimized to reduce its light shading effect. The buried electrode dramatically reduces the device series resistance, which leads to a higher fill factor (FF). With the optimized buried electrode, a record FF of 80% is achieved for flat Si/PEDOT:PSS heterojunction devices. With further enhancement adhesion between the PEDOT:PSS film and Si substrate by a chemical cross-linkable silance, a power conversion efficiency of 16.3% for organic/textured Si heterojunction devices is achieved. Our results provide a path to overcome the inferior organic semiconductor property to enhance the organic/Si heterojunction solar cell.

Preparation and characterization of CuO nanostructures on copper substrate as selective solar absorbers

International Nuclear Information System (INIS)

Karthick Kumar, S.; Murugesan, S.; Suresh, S.

2014-01-01

Selective solar absorber coatings of copper oxide (CuO) on copper substrates are prepared by room temperature oxidation of copper at different alkaline conditions. The surface morphology and structural analyses of the CuO coatings are carried out by scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and Raman spectroscopy techniques. XRD and Raman studies indicated the single phase nature and high crystallinity of the prepared CuO nanostructures. Different CuO nanostructures, viz., nanoneedles, nanofibers and nanoparticles are formed at different alkaline conditions. The influence of reaction time on morphology of the CuO nanostructures is also studied. The thermal emittance values of these nanostructured CuO samples are found to be in the range of 6–7% and their solar absorptances are ranged between 84 and 90%. The observed high solar selectivity values (>12.7) suggest that these coatings can be used as selective absorbers in solar thermal gadgets. - Highlights: • Nanostructured CuO thin films on Cu substrate have been prepared by a facile method. • Morphology of the CuO nanostructures varies with reaction pH. • The thin films show high absorptance in the visible region and low thermal emittance. • Multiple absorption in the porous structure leads to high solar absorptance. • Nanostructures posses solar selectivity values >12

Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2013-01-01

The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

Science.gov (United States)

Sun, Weihai; Li, Yunlong; Ye, Senyun; Rao, Haixia; Yan, Weibo; Peng, Haitao; Li, Yu; Liu, Zhiwei; Wang, Shufeng; Chen, Zhijian; Xiao, Lixin; Bian, Zuqiang; Huang, Chunhui

2016-05-19

During the past several years, methylammonium lead halide perovskites have been widely investigated as light absorbers for thin-film photovoltaic cells. Among the various device architectures, the inverted planar heterojunction perovskite solar cells have attracted special attention for their relatively simple fabrication and high efficiencies. Although promising efficiencies have been obtained in the inverted planar geometry based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) sulfonic acid ( PSS) as the hole transport material (HTM), the hydrophilicity of the PSS is a critical factor for long-term stability. In this paper, a CuOx hole transport layer from a facile solution-processed method was introduced into the inverted planar heterojunction perovskite solar cells. After the optimization of the devices, a champion PCE of 17.1% was obtained with an open circuit voltage (Voc) of 0.99 V, a short-circuit current (Jsc) of 23.2 mA cm(-2) and a fill factor (FF) of 74.4%. Furthermore, the unencapsulated device cooperating with the CuOx film exhibited superior performance in the stability test, compared to the device involving the PSS layer, indicating that CuOx could be a promising HTM for replacing PSS in inverted planar heterojunction perovskite solar cells.

Solution processed organic bulk heterojunction tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Albrecht, Steve; Neher, Dieter [Soft Matter Physics, University of Potsdam, D-14476 Potsdam (Germany)

2011-07-01

One of the critical issues regarding the preparation of organic tandem solar cells from solution is the central recombination contact. This contact should be highly transparent and conductive to provide high recombination currents. Moreover it should protect the 1st subcell from the solution processing of the 2nd subcell. Here, we present a systematic study of various recombination contacts in organic bulk heterojunction tandem solar cells made from blends of different polymers with PCBM. We compare solution processed recombination contacts fabricated from metal-oxides (TiO{sub 2} and ZnO) and PEDOT:PSS with evaporated recombination contacts made from thin metal layers and molybdenum-oxide. The solar cell characteristics as well as the morphology of the contacts measured by AFM and SEM are illustrated. To compare the electrical properties of the varying contacts we show measurements on single carrier devices for different contact-structures. Alongside we present the results of optical modeling of the subcells and the complete tandem device and relate these results to experimental absorption and reflection spectra of the same structures. Based on these studies, layer thicknesses were adjusted for optimum current matching and device performance.

Silicon nanowire array architecture for heterojunction electronics

Energy Technology Data Exchange (ETDEWEB)

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Brus, V. V. [Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Institute for Silicon Photovoltaics (Germany); Mostovyi, A. I.; Maryanchuk, P. D.; Orletskyi, I. G.; Kovaliuk, T. T. [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Abashin, S. L. [National Aerospace University “Kharkiv Aviation Institute”, Department of Physics (Ukraine)

2017-04-15

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

Fullerenes and nanostructured plastic solar cells

NARCIS (Netherlands)

Knol, Joop; Hummelen, Jan C.; Kuzmany, H; Fink, J; Mehring, M; Roth, S

1998-01-01

We report on the present on the present status of the plastic solar cell and on the design of fullerene derivatives and pi-conjugated donor molecules that can function as acceptor-donor pairs and (supra-) molecular building blocks in organized, nanostructured interpenetrating networks, forming a

Light-induced performance increase of silicon heterojunction solar cells

KAUST Repository

Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Christmann, Gabriel; Descoeudres, Antoine; Nicolay, Sylvain; Despeisse, Matthieu; Watabe, Yoshimi; Ballif, Christophe

2016-01-01

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

Light-induced performance increase of silicon heterojunction solar cells

KAUST Repository

Kobayashi, Eiji

2016-10-11

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

Hybrid ZnO:polymer bulk heterojunction solar cells from a ZnO precursor

NARCIS (Netherlands)

Beek, W.J.E.; Slooff, L.H.; Wienk, M.M.; Kroon, J.M.; Janssen, R.A.J.; Kafafi, Z.H.

2005-01-01

We describe a simple and new method to create hybrid bulk heterojunction solar cells consisting of ZnO and conjugated polymers. A gel-forming ZnO precursor, blended with conjugated polymers, is converted into crystalline ZnO at temperatures as low as 110 °C. In-situ formation of ZnO in MDMO-PPV

Nanostructured TiO2/CH3NH3PbI3 heterojunction solar cells employing spiro-OMeTAD/Co-complex as hole-transporting material

KAUST Repository

Noh, Jun Hong

2013-01-01

For using 2,2′,7,7′-tetrakis(N,N′-di-p- methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) as a hole conductor in solar cells, it is necessary to improve its charge-transport properties through electrochemical doping. With the aim of fabricating efficient mesoscopic TiO2/CH3NH3PbI3 heterojunction solar cells, we used tris[2-(1H-pyrazol-1-yl)-4-tert- butylpyridine)cobalt(iii) tris(bis(trifluoromethylsulfonyl) imide)] (FK209) as a p-dopant for spiro-OMeTAD. The mixture of spiro-OMeTAD, FK209, lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI), and 4-tert-butylpyridine (TBP) exhibited significantly higher performance than mixtures of pristine spiro-OMeTAD, spiro-OMeTAD, and FK209, and spiro-OMeTAD, Li-TFSI, and TBP. Such a synergistic effect between the Co-complex and Li-TFSI in conjunction with spiro-OMeTAD effectively improved the power conversion efficiency (PCE) of the fabricated solar cells. As a result, we achieved PCE of 10.4%, measured under standard solar conditions (AM 1.5G, 100 mW cm-2). © 2013 The Royal Society of Chemistry.

One-dimensional titania nanostructures: Synthesis and applications in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Hao [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials and Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Guo, Zhiguang, E-mail: zguo@licp.cas.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials and Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Shimin [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials and Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liu, Weimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2014-05-02

One-dimensional (1D) titania (TiO{sub 2}) in the form of nanorods, nanowires, nanobelts and nanotubes have attracted much attention due to their unique physical, chemical and optical properties enabling extraordinary performance in biomedicine, sensors, energy storage, solar cells and photocatalysis. In this review, we mainly focus on synthetic methods for 1D TiO{sub 2} nanostructures and the applications of 1D TiO{sub 2} nanostructures in dye-sensitized solar cells (DSCs). Traditional nanoparticle-based DSCs have numerous grain boundaries and surface defects, which increase the charge recombination from photoanode to electrolyte. 1D TiO{sub 2} nanostructures can provide direct and rapid electron transport to the electron collecting electrode, indicating a promising choice for DSCs. We divide the applications of 1D TiO{sub 2} nanostructures in DSCs into four parts, that is, 1D TiO{sub 2} nanostructures only, 1D TiO{sub 2} nanostructure/nanoparticle composites, branched 1D TiO{sub 2} nanostructures, and 1D TiO{sub 2} nanostructures combined with other materials. This work will provide guidance for preparing 1D TiO{sub 2} nanostructures, and using them as photoanodes in efficient DSCs. - Graphical abstract: 1D TiO{sub 2} nanostructures which can provide direct and rapid pathways for electron transport have promising applications in dye-sensitized solar cells (DSCs). The synthetic methods and applications of 1D TiO{sub 2} nanostructures in DSCs are summarized in this review article.

Photonic Nanostructures Design and Optimization for Solar Cell Application

Directory of Open Access Journals (Sweden)

Qian Liu

2015-08-01

Full Text Available In this paper, a semiconducting photonic nanostructure capable of wide range absorption and tunable optical resonance has been designed with a proposed theoretical optimization model. The design consists of ZnO/CdS core-shell nanowire arrays as well as multilayer thin films that act to absorb incident electromagnetic (EM waves over a broad frequency range. Theoretical, as well as numerical, studies of the nanostructure inside a solar cell plate have been conducted in order to validate the proposed microstructural design. Excellent energy absorption rates of EM waves have been achieved in the high frequency range by using the optical resonance of the nanowire array. By combining multilayer thin film with the core-shell nanowire in the unit cell of a photonic solar cell, a broadband high absorption has been achieved. Moreover, the geometry of the proposed photonic nanostructure is obtained through the implementation of a genetic algorithm. This avoids local minima and an optimized absorption rate of ~90% over the frequency range of 300 to 750 THz has been obtained in the solar cell.

Morphology control for highly efficient organic–inorganic bulk heterojunction solar cell based on Ti-alkoxide

International Nuclear Information System (INIS)

Kato, Takehito; Hagiwara, Naoki; Suzuki, Eiji; Nasu, Yuki; Izawa, Satoru; Tanaka, Kouichi; Kato, Ariyuki

2016-01-01

The number of publications concerned with typical bulk-heterojunction solar cells that use fullerene derivatives and inorganic materials as electron acceptors has grown very rapidly. In this work, we focus on Ti-alkoxides as electron acceptors in the photoactive layers of fullerene-free bulk-heterojunction solar cells. We show that it is possible to control the morphology by adjusting the molecular structure and size of the Ti-alkoxides. The short-circuit current density (J_s_c) increased to 191 μA/cm"2 from 25 μA/cm"2 with a maximum, when the phase-separation structure was continuously formed to within about 20 nm below the exciton diffusion length by using either titanium(IV) ethoxide or isopropoxide as an electron acceptor. Within a thickness of 30 nm, the photoactive layer is not influenced by the electron transfer ability; thus, we demonstrate that the charge-separation efficiency is equivalent to that of a fullerene system. - Highlights: • An organic–inorganic bulk-heterojunction photoactive layer was used. • Electron donor was a semiconducting polymer and electron acceptor was Ti-alkoxide. • Demonstration of morphology control by Ti-alkoxide molecules. • Determination of Jsc value by the phase-separation structure in an ultra-thin film. • Charge-separation efficiency of Ti-alkoxide system equivalent to fullerene system.

Ring substituents mediate the morphology of PBDTTPD-PCBM bulk-heterojunction solar cells

KAUST Repository

Warnan, Julien

2014-04-08

Among π-conjugated polymer donors for efficient bulk-heterojunction (BHJ) solar cell applications, poly(benzo[1,2-b:4,5-b′]dithiophene- thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymers yield some of the highest open-circuit voltages (VOC, ca. 0.9 V) and fill-factors (FF, ca. 70%) in conventional (single-cell) BHJ devices with PCBM acceptors. In PBDTTPD, side chains of varying size and branching affect polymer self-assembly, nanostructural order, and impact material performance. However, the role of the polymer side-chain pattern in the intimate mixing between polymer donors and PCBM acceptors, and on the development of the BHJ morphology is in general less understood. In this contribution, we show that ring substituents such as furan (F), thiophene (T) and selenophene (S)-incorporated into the side chains of PBDTTPD polymers-can induce significant and, of importance, very different morphological effects in BHJs with PCBM. A combination of experimental and theoretical (via density functional theory) characterizations sheds light on how varying the heteroatom of the ring substituents impacts (i) the preferred side-chain configurations and (ii) the ionization, electronic, and optical properties of the PBDTTPD polymers. In parallel, we find that the PBDT(X)TPD analogs (with X = F, T, or S) span a broad range of power conversion efficiencies (PCEs, 3-6.5%) in optimized devices with improved thin-film morphologies via the use of 1,8-diiodooctane (DIO), and discuss that persistent morphological impediments at the nanoscale can be at the origin of the spread in PCE across optimized PBDT(X)TPD-based devices. With their high VOC ∼1 V, PBDT(X)TPD polymers are promising candidates for use in the high-band gap cell of tandem solar cells. © 2014 American Chemical Society.

Ring substituents mediate the morphology of PBDTTPD-PCBM bulk-heterojunction solar cells

KAUST Repository

Warnan, Julien; El Labban, Abdulrahman; Cabanetos, Clement; Hoke, Eric T.; Shukla, Pradeep Kumar; Risko, Chad; Bré das, Jean Luc; McGehee, Michael D.; Beaujuge, Pierre

2014-01-01

Among π-conjugated polymer donors for efficient bulk-heterojunction (BHJ) solar cell applications, poly(benzo[1,2-b:4,5-b′]dithiophene- thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymers yield some of the highest open-circuit voltages (VOC, ca. 0.9 V) and fill-factors (FF, ca. 70%) in conventional (single-cell) BHJ devices with PCBM acceptors. In PBDTTPD, side chains of varying size and branching affect polymer self-assembly, nanostructural order, and impact material performance. However, the role of the polymer side-chain pattern in the intimate mixing between polymer donors and PCBM acceptors, and on the development of the BHJ morphology is in general less understood. In this contribution, we show that ring substituents such as furan (F), thiophene (T) and selenophene (S)-incorporated into the side chains of PBDTTPD polymers-can induce significant and, of importance, very different morphological effects in BHJs with PCBM. A combination of experimental and theoretical (via density functional theory) characterizations sheds light on how varying the heteroatom of the ring substituents impacts (i) the preferred side-chain configurations and (ii) the ionization, electronic, and optical properties of the PBDTTPD polymers. In parallel, we find that the PBDT(X)TPD analogs (with X = F, T, or S) span a broad range of power conversion efficiencies (PCEs, 3-6.5%) in optimized devices with improved thin-film morphologies via the use of 1,8-diiodooctane (DIO), and discuss that persistent morphological impediments at the nanoscale can be at the origin of the spread in PCE across optimized PBDT(X)TPD-based devices. With their high VOC ∼1 V, PBDT(X)TPD polymers are promising candidates for use in the high-band gap cell of tandem solar cells. © 2014 American Chemical Society.

Vacuum-free processed bulk heterojunction solar cells with E-GaIn cathode as an alternative to Al electrode

International Nuclear Information System (INIS)

Ongul, Fatih; Yuksel, Sureyya Aydın; Bozar, Sinem; Gunes, Serap; Cakmak, Gulbeden; Guney, Hasan Yuksel; Egbe, Daniel Ayuk Mbi

2015-01-01

In this paper, the photovoltaic characteristics of bulk heterojunction solar cells employing an eutectic gallium–indium (EGaIn) alloy as a top metal contact which was coated by a simple and inexpensive brush-painting was investigated. The overall solar cell fabrication procedure was vacuum-free. As references, regular organic bulk heterojunction solar cells employing thermally evaporated Aluminum as a top metal contact were also fabricated. Inserting the ZnO layer between the active layer and the cathode electrodes (Al and EGaIn) improved the photovoltaic performance of the herein investigated devices. The power conversion efficiencies with and without EGaIn top electrodes were rather comparable. Hence, we have shown that the EGaIn, which is liquid at room temperature, can be used as a cathode. It allows an easy and rapid device fabrication that can be implemented through a vacuum free process. (paper)

Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

2016-01-29

Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Tandem-type organic solar cells by stacking different heterojunction materials

International Nuclear Information System (INIS)

Triyana, Kuwat; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

2005-01-01

Three layers of phthalocyanine/perylene heterojunction (HJ) components were stacked and sandwiched by an indium tin oxide (ITO) and a top metal electrode, which is denoted by a triple-HJ organic solar cell. The organic material in the middle-HJ component second from the ITO was varied to investigate the photovoltaic properties. The power conversion efficiency (PCE) was improved by the more balanced photo-generated carrier by use of the appropriate material for the second-HJ component. The optimized device showed higher PCE (1.38%) than the reference device (0.98%)

Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor.

Science.gov (United States)

Wu, Zhongwei; Bai, Sai; Xiang, Jian; Yuan, Zhongcheng; Yang, Yingguo; Cui, Wei; Gao, Xingyu; Liu, Zhuang; Jin, Yizheng; Sun, Baoquan

2014-09-21

Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH₃NH₃PbI₃-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.

Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

OpenAIRE

Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

2015-01-01

A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

Atomic layer deposited ZnO:B as transparent conductive oxide for silicon heterojunction solar cells

NARCIS (Netherlands)

Gatz, H.A.; Koushik, D.; Rath, J.K.; Kessels, W.M.M.; Schropp, R.E.I.

A key factor to improve the performance of silicon heterojunction solar cells (SHJ) is increasing their short circuit density (Jsc) by reducing the parasitic absorption of light in the front side of the cell. Therefore, we have investigated the replacement of the conventional sputtered ITO on the

Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

International Nuclear Information System (INIS)

Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

2008-01-01

Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

Polymer-Polymer Förster Resonance Energy Transfer Significantly Boosts the Power Conversion Efficiency of Bulk-Heterojunction Solar Cells.

Science.gov (United States)

Gupta, Vinay; Bharti, Vishal; Kumar, Mahesh; Chand, Suresh; Heeger, Alan J

2015-08-01

Optically resonant donor polymers can exploit a wider range of the solar spectrum effectively without a complicated tandem design in an organic solar cell. Ultrafast Förster resonance energy transfer (FRET) in a polymer-polymer system that significantly improves the power conversion efficiency in bulk heterojunction polymer solar cells from 6.8% to 8.9% is demonstrated, thus paving the way to achieving 15% efficient solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

OpenAIRE

Ivan Litzov; Christoph J. Brabec

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work fun...

Controlling solution-phase polymer aggregation with molecular weight and solvent additives to optimize polymer-fullerene bulk heterojunction solar cells

KAUST Repository

Bartelt, Jonathan A.

2014-03-20

The bulk heterojunction (BHJ) solar cell performance of many polymers depends on the polymer molecular weight (M n) and the solvent additive(s) used for solution processing. However, the mechanism that causes these dependencies is not well understood. This work determines how M n and solvent additives affect the performance of BHJ solar cells made with the polymer poly(di(2-ethylhexyloxy)benzo[1,2-b:4,5-b\\']dithiophene-co- octylthieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD). Low M n PBDTTPD devices have exceedingly large fullerene-rich domains, which cause extensive charge-carrier recombination. Increasing the M n of PBDTTPD decreases the size of these domains and significantly improves device performance. PBDTTPD aggregation in solution affects the size of the fullerene-rich domains and this effect is linked to the dependency of PBDTTPD solubility on M n. Due to its poor solubility high M n PBDTTPD quickly forms a fibrillar polymer network during spin-casting and this network acts as a template that prevents large-scale phase separation. Furthermore, processing low M n PBDTTPD devices with a solvent additive improves device performance by inducing polymer aggregation in solution and preventing large fullerene-rich domains from forming. These findings highlight that polymer aggregation in solution plays a significant role in determining the morphology and performance of BHJ solar cells. The performance of poly(di(2-ethylhexyloxy) benzo[1,2-b:4,5-b\\']dithiophene-co-octylthieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) bulk heterojunction solar cells strongly depends on the polymer molecular weight, and processing these bulk heterojunctions with a solvent additive preferentially improves the performance of low molecular weight devices. It is demonstrated that polymer aggregation in solution significantly impacts the thin-film bulk heterojunction morphology and is vital for high device performance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

OpenAIRE

Geissbühler Jonas; Werner Jérémie; Martin de Nicolas Silvia; Barraud Loris; Hessler-Wyser Aïcha; Despeisse Matthieu; Nicolay Sylvain; Tomasi Andrea; Niesen Bjoern; De Wolf Stefaan; Ballif Christophe

2015-01-01

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p type amorphous silicon with molybdenum oxide films. In this article we evidence that annealing above 130?°C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited c...

Shelf life and outdoor degradation studies of organic bulk heterojunction solar cells

Science.gov (United States)

Gergova, R.; Sendova-Vassileva, M.; Popkirov, G.; Gancheva, V.; Grancharov, G.

2018-03-01

We studied the degradation of different types of bulk heterojunction devices, in which the materials comprising the active layer and/or the materials used for the back electrode are varied. The devices are deposited on ITO covered glass and have the structure PEDOT:PSS/BHJ/Me, where PEDOT:PSS is the hole transport layer, BHJ (bulk heterojunction) is the active layer comprising a polymer donor (e.g. PTB7, PCDTBT) and a fullerene derivative acceptor (e.g. PC60BM, PC70BM) deposited by spin coating, Me is the metal back contact, which is either Ag or Al deposited by magnetron sputtering or thermal evaporation. The device performance was monitored after storage in the dark at ambient conditions by following the evolution of the J-V curve over time. Results of real conditions outdoor degradation studies are also presented. The stability of the different solar cell structures studied is compared.

Contribution of Nanostructures in High Performance Solar Cells

Science.gov (United States)

Aly, Abouelmaaty M.; Ebrahim, Essamudin A.; Sweelem, Emad

2017-11-01

Nanotechnology has great contributions in various fields, especially in solar energy conversion through solar cells (SCs). Nanostructured SCs can provide high performance with lower fabrication costs. The transition from fossil fuel energy to renewable sustainable energy represents a major technological challenge for the world. In the last years, the industry of SCs has grown rapidly due to strong attention in renewable energy in order to handle the problem of global climate change that is now believed to occur due to use of the fossil fuels. Cost is an influential factor in the eventual success of any solar technology, since inexpensive SCs are needed to produce electricity, especially for rural areas and for third world countries. Therefore, new developments in nanotechnology may open the door for the production of inexpensive and more efficient SCs by reducing the manufacturing costs of SCs. Utilizing nanotechnology in cheaper SCs will help maintain the environment. This article covers a review of the progress that has been made to-date to enhance efficiencies of various nanostructures used in SCs, including utilizations of all the wavelengths present in of the solar spectrum.

Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

International Nuclear Information System (INIS)

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho; Balaji, Nagarajan; Ahn, Shihyun; Hussain, Shahzada Qamar; Han, Sangmyeong; Jung, Junhee; Jang, Juyeon; Lee, Yunjung; Yi, Junsin

2013-01-01

Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J sc . ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V oc . ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V oc ), short-circuit current density (J sc ), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm 2 heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V oc of 690 mV, J sc of 33.62 mA/cm 2 , and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells

Modelling the temperature induced degradation kinetics of the short circuit current in organic bulk heterojunction solar cells

NARCIS (Netherlands)

Conings, B.S.T.; Bertho, S.; Vandewal, K.; Senes, A.; D'Haen, J.; Manca, J.V.; Janssen, R.A.J.

2010-01-01

In organic bulk heterojunction solar cells, the nanoscale morphology of interpenetrating donor-acceptor materials and the resulting photovoltaic parameters alter as a consequence of prolonged operation at temperatures above the glass transition temperature. Thermal annealing induces clustering of

Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

DEFF Research Database (Denmark)

Chen, Leifeng; Yu, Hua; Zhong, Jiasong

2015-01-01

The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

2015-09-21

We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

Studies of bulk heterojunction solar cells

Science.gov (United States)

Cossel, Raquel; McIntyre, Max; Tzolov, Marian

We are studying bulk heterojunction solar cells that were fabricated using a mixture of PCPDTBT and PCBM­C60. The impedance data of the cells in dark responded like a simple RC circuit. The value of the dielectric constant derived from these results is consistent with the values reported in the literature for these materials. We are showing that the parallel resistance in the equivalent circuit of linear lump elements can be interpreted using the DC current­voltage measurements. The impedance spectra under light illumination indicated the existence of additional polarization. This extra feature can be described by a model that includes a series RC circuit in parallel with the equivalent circuit for a device in dark. The physical interpretation of the additional polarization is based on photo­generated charges getting trapped in wells, which have a characteristic relaxation time corresponding to the observed break frequency in the impedance spectra. We have studied the influence of the anode and cathode interface on this phenomena, either by using different interface materials, or by depositing the metal electrode while the substate is heated.

Novel nanostructures for next generation dye-sensitized solar cells

KAUST Repository

Tétreault, Nicolas

2012-01-01

Herein, we review our latest advancements in nanostructured photoanodes for next generation photovoltaics in general and dye-sensitized solar cells in particular. Bottom-up self-assembly techniques are developed to fabricate large-area 3D nanostructures that enable enhanced charge extraction and light harvesting through optical scattering or photonic crystal effects to improve photocurrent, photovoltage and fill factor. Using generalized techniques to fabricate specialized nanostructures enables specific optoelectronic and physical characteristics like conduction, charge extraction, injection, recombination and light harvesting but also helps improve mechanical flexibility and long-term stability in low cost materials. © 2012 The Royal Society of Chemistry.

Photonic crystal geometry for organic solar cells.

Science.gov (United States)

Ko, Doo-Hyun; Tumbleston, John R; Zhang, Lei; Williams, Stuart; DeSimone, Joseph M; Lopez, Rene; Samulski, Edward T

2009-07-01

We report organic solar cells with a photonic crystal nanostructure embossed in the photoactive bulk heterojunction layer, a topography that exhibits a 3-fold enhancement of the absorption in specific regions of the solar spectrum in part through multiple excitation resonances. The photonic crystal geometry is fabricated using a materials-agnostic process called PRINT wherein highly ordered arrays of nanoscale features are readily made in a single processing step over wide areas (approximately 4 cm(2)) that is scalable. We show efficiency improvements of approximately 70% that result not only from greater absorption, but also from electrical enhancements. The methodology is generally applicable to organic solar cells and the experimental findings reported in our manuscript corroborate theoretical expectations.

Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

International Nuclear Information System (INIS)

Hwang, Hyun-Sik; Khang, Dahl-Young

2015-01-01

‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s

Optimizing Performance Parameters of Chemically-Derived Graphene/p-Si Heterojunction Solar Cell.

Science.gov (United States)

Batra, Kamal; Nayak, Sasmita; Behura, Sanjay K; Jani, Omkar

2015-07-01

Chemically-derived graphene have been synthesized by modified Hummers method and reduced using sodium borohydride. To explore the potential for photovoltaic applications, graphene/p-silicon (Si) heterojunction devices were fabricated using a simple and cost effective technique called spin coating. The SEM analysis shows the formation of graphene oxide (GO) flakes which become smooth after reduction. The absence of oxygen containing functional groups, as observed in FT-IR spectra, reveals the reduction of GO, i.e., reduced graphene oxide (rGO). It was further confirmed by Raman analysis, which shows slight reduction in G-band intensity with respect to D-band. Hall effect measurement confirmed n-type nature of rGO. Therefore, an effort has been made to simu- late rGO/p-Si heterojunction device by using the one-dimensional solar cell capacitance software, considering the experimentally derived parameters. The detail analysis of the effects of Si thickness, graphene thickness and temperature on the performance of the device has been presented.

Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

Science.gov (United States)

Huang, Wenxiao; Borazan, Ismail; Carroll, David

Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

Charge transport in nanostructured materials for solar energy conversion studied by time-resolved terahertz spectroscopy

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Kužel, Petr; Sundström, V.

2010-01-01

Roč. 215, 2-3 (2010), s. 123-139 ISSN 1010-6030 R&D Projects: GA ČR(CZ) GP202/09/P099; GA AV ČR(CZ) IAA100100902; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : time-resolved terahertz spectroscopy * ultrafast dynamics * bulk heterojunction * semiconductor nanostructures * transport * mobility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.243, year: 2010

Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Balaji, Nagarajan [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Ahn, Shihyun [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Hussain, Shahzada Qamar [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Han, Sangmyeong [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jang, Juyeon; Lee, Yunjung [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2013-05-15

Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J{sub sc}. ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V{sub oc}. ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm{sup 2} heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V{sub oc} of 690 mV, J{sub sc} of 33.62 mA/cm{sup 2}, and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells.

Solar cells with gallium phosphide/silicon heterojunction

Science.gov (United States)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Research on ZnO/Si heterojunction solar cells

Science.gov (United States)

Chen, Li; Chen, Xinliang; Liu, Yiming; Zhao, Ying; Zhang, Xiaodan

2017-06-01

We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO:B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications. We investigate the effects of thickness, buffer layer, ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package. The energy conversion efficiency of the ZnO:B(n)/ZnO/c-Si(p) solar cell can achieve 17.16% ({V}{oc}: 675.8 mV, {J}{sc}: 30.24 mA/cm2, FF: 83.96%) via simulation. On a basis of optimized conditions in simulation, we carry out some experiments, which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells. The influences of growth temperature, thickness and diborane (B2H6) flow rates are also discussed. We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique. The obtained conversion efficiency reaches 2.82% ({V}{oc}: 294.4 mV, {J}{sc}: 26.108 mA/cm2, FF: 36.66%). Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

Morphology versus Vertical Phase Segregation in Solvent Annealed Small Molecule Bulk Heterojunction Organic Solar Cells

Directory of Open Access Journals (Sweden)

Alexander Kovalenko

2015-01-01

Full Text Available The deep study of solvent annealed small molecules bulk heterojunction organic solar cells based on DPP(TBFu2 : PC60BM blend is carried out. To reveal the reason of the solvent annealing advantage over the thermal one, capacitance-voltage measurements were applied. It was found that controlling the vertical phase segregation in the solar cells a high fullerene population in the vicinity of the cathode could be achieved. This results in increase of the shunt resistance of the cell, thus improving the light harvesting efficiency.

Hybrid organic-inorganic heterojunctions for photovoltaic applications

OpenAIRE

Dietmüller, Roland

2012-01-01

Hybrid organic-inorganic bulk heterojunction solar cells based on silicon nanocrystals (Si-nc) have been realized and investigated. A photo-induced charge transfer could be demonstrated in composites made of silicon nanocrystals and poly(3-hexylthiophene) (P3HT) or [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) via light-induced electron spin resonance measurements. With bulk heterojunction solar cells made of P3HT/Si-nc composites in a sandwich structure, open-circuit voltages of up to 0....

Modelling the short-circuit current of polymer bulk heterojunction solar cells

International Nuclear Information System (INIS)

Geens, Wim; Martens, Tom; Poortmans, Jef; Aernouts, Tom; Manca, Jean; Lutsen, Laurence; Heremans, Paul; Borghs, Staf; Mertens, Robert; Vanderzande, Dirk

2004-01-01

An analytical model has been developed to estimate the short-circuit current density of conjugated polymer/fullerene bulk heterojunction solar cells. The model takes into account the solvent-dependent molecular morphology of the donor/acceptor blend, which was revealed by transmission electron microscopy. Field-effect transistors based on single and composite organic layers were fabricated to determine values for the charge carrier mobilities of such films. These values served as input parameters of the model. It is shown that the difference in short-circuit current density that was measured between toluene-cast and chlorobenzene-cast conjugated polymer/fullerene photovoltaic cells (Appl. Phys. Lett. 78 (2001) 841) could be very well simulated with the model. Moreover, the calculations illustrate how increasing the hole and electron mobilities in the photoactive blend can improve the overall short-circuit current density of the solar cell

Schottky diodes between Bi2S3 nanorods and metal nanoparticles in a polymer matrix as hybrid bulk-heterojunction solar cells

International Nuclear Information System (INIS)

Saha, Sudip K.; Pal, Amlan J.

2015-01-01

We report the use of metal-semiconductor Schottky junctions in a conjugated polymer matrix as solar cells. The Schottky diodes, which were formed between Bi 2 S 3 nanorods and gold nanoparticles, efficiently dissociated photogenerated excitons. The bulk-heterojunction (BHJ) devices based on such metal-semiconductor Schottky diodes in a polymer matrix therefore acted as an efficient solar cell as compared to the devices based on only the semiconductor nanorods in the polymer matrix or when gold nanoparticles were added separately to the BHJs. In the latter device, gold nanoparticles offered plasmonic enhancement due to an increased cross-section of optical absorption. We report growth and characteristics of the Schottky junctions formed through an intimate contact between Bi 2 S 3 nanorods and gold nanoparticles. We also report fabrication and characterization of BHJ solar cells based on such heterojunctions. We highlight the benefit of using metal-semiconductor Schottky diodes over only inorganic semiconductor nanorods or quantum dots in a polymer matrix in forming hybrid BHJ solar cells

Simulation of High Efficiency Heterojunction Solar Cells with AFORS-HET

International Nuclear Information System (INIS)

Wang Lisheng; Chen Fengxiang; Ai Yu

2011-01-01

In this paper, the high efficiency TCO/a-Si:H (n)/a-Si:H(i)/c-Si(p)/uc-Si(p + )/Al HIT (heterojunction with intrinsic thin-layer) solar cells was analyzed and designed by AFORS-HET software. The influences of emitter, intrinsic layer and back surface field (BSF) on the photovoltaic characteristics of solar cell were discussed. The simulation results show that the key role of the intrinsic layer inserted between the a-Si:H and crystalline silicon substrate is to decrease the interface states density. If the interface states density is lower than 10 10 cm -2 V -1 thinner intrinsic layer is better than thicker one. The increase of the thickness of the emitter will decrease the short-current density and affect the conversion efficiency. Microcrystalline BSF can increase conversion efficiency more than 2 percentage points compared with HIT solar cell with no BSF. But this BSF requires the doping concentration must exceed 10 20 cm -3 . Considered the band mismatch between crystalline silicon and microcrystalline silicon, the optimal band gap of microcrystalline silicon BSF is about 1.4-1.6eV.

Semiconductor nanostructures for artificial photosynthesis

Science.gov (United States)

Yang, Peidong

2012-02-01

Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

A Review on Anodic Aluminum Oxide Methods for Fabrication of Nanostructures for Organic Solar Cells

DEFF Research Database (Denmark)

Goszczak, Arkadiusz Jaroslaw; Cielecki, Pawel Piotr

2018-01-01

Implementation of nanostructures into the organic solar cell (OSC) architecture has great influence on the device performance. Nanostructuring the active layer increases the interfacial area between donor and acceptor, which enhances the probability of exciton dissociation. Introduction of nanost......Implementation of nanostructures into the organic solar cell (OSC) architecture has great influence on the device performance. Nanostructuring the active layer increases the interfacial area between donor and acceptor, which enhances the probability of exciton dissociation. Introduction......, low fabrication cost and easy control over its nano-scale morphology, make AAO patterning methods an intriguing candidate for nanopatterning. Hence, in this work, we present a review on the fabrication techniques and on nanostructures from Anodic Aluminum Oxide (AAO) for OSC applications...

Self-assembled, nanowire network electrodes for depleted bulk heterojunction solar cells

KAUST Repository

Lan, Xinzheng; Bai, Jing; Masala, Silvia; Thon, Susanna; Ren, Yuan; Kramer, Illan J.; Hoogland, Sjoerd H.; Simchi, Arash; Koleilat, Ghada I.; Paz-Soldan, Daniel; Ning, Zhijun; Labelle, André J.; Kim, Jinyoung; Jabbour, Ghassan E.; Sargent, E. H.

2013-01-01

Herein, a solution-processed, bottom-up-fabricated, nanowire network electrode is developed. This electrode features a ZnO template which is converted into locally connected, infiltratable, TiO2 nanowires. This new electrode is used to build a depleted bulk heterojunction solar cell employing hybrid-passivated colloidal quantum dots. The new electrode allows the application of a thicker, and thus more light-absorbing, colloidal quantum dot active layer, from which charge extraction of an efficiency comparable to that obtained from a thinner, planar device could be obtained. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-assembled, nanowire network electrodes for depleted bulk heterojunction solar cells

KAUST Repository

Lan, Xinzheng

2013-01-06

Herein, a solution-processed, bottom-up-fabricated, nanowire network electrode is developed. This electrode features a ZnO template which is converted into locally connected, infiltratable, TiO2 nanowires. This new electrode is used to build a depleted bulk heterojunction solar cell employing hybrid-passivated colloidal quantum dots. The new electrode allows the application of a thicker, and thus more light-absorbing, colloidal quantum dot active layer, from which charge extraction of an efficiency comparable to that obtained from a thinner, planar device could be obtained. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Roles of binding energy and diffusion length of singlet and triplet excitons in organic heterojunction solar cells

International Nuclear Information System (INIS)

Narayan, Monishka Rita; Singh, Jai

2012-01-01

The influence of binding energy and diffusion length on the dissociation of excitons in organic solids is studied. The binding energy and excitonic Bohr radius of singlet and triplet excitons are calculated and compared using the dissociation energy of 0.3 eV, which is provided by the lowest unoccupied molecular orbital offset in heterojunction organic solar cells. A relation between the diffusion coefficient and diffusion length of singlet and triplet excitons is derived using the Foerster and Dexter transfer processes and are plotted as a function of the donor-acceptor separation. The diffusion length reduces nearly to a zero if the distance between donor and acceptor is increased to more than 1.5 nm. It is found that the donor-acceptor separation needs to be ≤ 1.5 nm for easy dissociation on singlet excitons leading to better conversion efficiency in heterojunction organic solar cells. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Roles of binding energy and diffusion length of singlet and triplet excitons in organic heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Narayan, Monishka Rita [Centre for Renewable Energy and Low Emission Technology, Charles Darwin University, Darwin, NT 0909 (Australia); Singh, Jai [School of Engineering and IT, Charles Darwin University, Darwin, NT 0909 (Australia)

2012-12-15

The influence of binding energy and diffusion length on the dissociation of excitons in organic solids is studied. The binding energy and excitonic Bohr radius of singlet and triplet excitons are calculated and compared using the dissociation energy of 0.3 eV, which is provided by the lowest unoccupied molecular orbital offset in heterojunction organic solar cells. A relation between the diffusion coefficient and diffusion length of singlet and triplet excitons is derived using the Foerster and Dexter transfer processes and are plotted as a function of the donor-acceptor separation. The diffusion length reduces nearly to a zero if the distance between donor and acceptor is increased to more than 1.5 nm. It is found that the donor-acceptor separation needs to be {<=} 1.5 nm for easy dissociation on singlet excitons leading to better conversion efficiency in heterojunction organic solar cells. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Novel nanostructures for next generation dye-sensitized solar cells

KAUST Repository

Té treault, Nicolas; Grä tzel, Michael

2012-01-01

Herein, we review our latest advancements in nanostructured photoanodes for next generation photovoltaics in general and dye-sensitized solar cells in particular. Bottom-up self-assembly techniques are developed to fabricate large-area 3D

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

Science.gov (United States)

Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling solution-phase polymer aggregation with molecular weight and solvent additives to optimize polymer-fullerene bulk heterojunction solar cells

KAUST Repository

Bartelt, Jonathan A.; Douglas, Jessica D.; Mateker, William R.; El Labban, Abdulrahman; Tassone, Christopher J.; Toney, Michael F.; Fré chet, Jean Mj J; Beaujuge, Pierre; McGehee, Michael D.

2014-01-01

The bulk heterojunction (BHJ) solar cell performance of many polymers depends on the polymer molecular weight (M n) and the solvent additive(s) used for solution processing. However, the mechanism that causes these dependencies is not well

Spectroscopic imaging of photopotentials and photoinduced potential fluctuations in a bulk heterojunction solar cell film.

Science.gov (United States)

Luria, Justin L; Hoepker, Nikolas; Bruce, Robert; Jacobs, Andrew R; Groves, Chris; Marohn, John A

2012-11-27

We present spatially resolved photovoltage spectra of a bulk heterojunction solar cell film composed of phase-separated poly(9,9'-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB) polymers prepared on ITO/PEDOT:PSS and aluminum substrates. Over both PFB- and F8BT-rich domains, the photopotential spectra were found to be proportional to a linear combination of the polymers' absorption spectra. Charge trapping in the film was studied using photopotential fluctuation spectroscopy, in which low-frequency photoinduced electrostatic potential fluctuations were measured by observing noise in the oscillation frequency of a nearby charged atomic force microscope cantilever. Over both F8BT- and PFB-rich regions, the magnitude, distance dependence, frequency dependence, and illumination wavelength dependence of the observed cantilever frequency noise are consistent with photopotential fluctuations arising from stochastic light-driven trapping and detrapping of charges in F8BT. Taken together, our findings suggest a microscopic mechanism by which intermixing of phases leads to charge trapping and thereby to suppressed open-circuit voltage and decreased efficiency in this prototypical bulk heterojunction solar cell film.

The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

KAUST Repository

Gasparini, Nicola

2018-01-29

Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene-based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene-based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA-based composites that enable devices without early performance loss, thus resembling so-called burn-in free devices.

The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

KAUST Repository

Gasparini, Nicola; Wadsworth, Andrew; Moser, Maximilian; Baran, Derya; McCulloch, Iain; Brabec, Christoph J.

2018-01-01

Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene-based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene-based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA-based composites that enable devices without early performance loss, thus resembling so-called burn-in free devices.

Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

KAUST Repository

Dyer-Smith, Clare; Howard, Ian A.; Cabanetos, Clement; El Labban, Abdulrahman; Beaujuge, Pierre; Laquai, Fré dé ric

2015-01-01

Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl

Low temperature processed planar heterojunction perovskite solar cells employing silver nanowires as top electrode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jianhua; Li, Fushan, E-mail: fushanli@hotmail.com; Yang, Kaiyu; Veeramalai, Chandrasekar Perumal; Guo, Tailiang

2016-04-30

Graphical abstract: - Highlights: • All solution processed perovskite solar cells were realized with Ag nanowires. • ZnO nanoparticles were used as electron transport layer. • The solar cells showed a photovoltaic behavior with efficiency of 9.21%. • Device performance showed negligible difference between forward and reverse scan. - Abstract: In this paper, we reported a low temperature processed planar heterojunction perovskite solar cell employing silver nanowires as the top electrode and ZnO nanoparticles as the electron transport layer. The CH{sub 3}NH{sub 3}PbI{sub 3} perovskite was grown as the light absorber via two-step spin-coating technique. The as-fabricated perovskite solar cell exhibited the highest power conversion efficiency of 9.21% with short circuit current density of 19.75 mA cm{sup −2}, open circuit voltage of 1.02, and fill factor value of 0.457. The solar cell's performance showed negligible difference between the forward and reverse bias scan. This work paves a way for realizing low cost solution processable solar cells.

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells

International Nuclear Information System (INIS)

Paetzold, Ulrich W.; Meier, Matthias; Moulin, Etienne; Smirnov, Vladimir; Pieters, Bart E.; Rau, Uwe; Carius, Reinhard

2013-01-01

In this work, we investigate the light trapping of thin-film silicon solar cells which apply plasmonic Ag back contacts with non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. The measured reflectance spectra of the Ag back contacts with non-ordered nanostructures in air are well reproduced in reflectance spectra derived from the three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. The light–matter interaction of these nanostructures is given by localized surface plasmons and, thus, the measured diffuse reflectance of the back contacts is attributed to plasmon-induced light scattering. A significant plasmonic light-trapping effect in n-i-p substrate-type μc-Si:H thin-film solar cell prototypes which apply a Ag back contact with non-ordered nanostructures is identified when compared with flat reference solar cells

Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Paetzold, Ulrich W., E-mail: u.paetzold@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Meier, Matthias, E-mail: ma.meier@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Moulin, Etienne, E-mail: e.moulin@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Smirnov, Vladimir, E-mail: v.smirnov@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Pieters, Bart E., E-mail: b.pieters@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Rau, Uwe, E-mail: u.rau@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Carius, Reinhard, E-mail: r.carius@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany)

2013-05-15

In this work, we investigate the light trapping of thin-film silicon solar cells which apply plasmonic Ag back contacts with non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. The measured reflectance spectra of the Ag back contacts with non-ordered nanostructures in air are well reproduced in reflectance spectra derived from the three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. The light–matter interaction of these nanostructures is given by localized surface plasmons and, thus, the measured diffuse reflectance of the back contacts is attributed to plasmon-induced light scattering. A significant plasmonic light-trapping effect in n-i-p substrate-type μc-Si:H thin-film solar cell prototypes which apply a Ag back contact with non-ordered nanostructures is identified when compared with flat reference solar cells.

Fabrication of Dye-Sensitized Solar Cells with a 3D Nanostructured Electrode

Directory of Open Access Journals (Sweden)

Guo-Yang Chen

2010-01-01

Full Text Available A novel Dye-Sensitized Solar Cell (DSSC scheme for better solar conversion efficiency is proposed. The distinctive characteristic of this novel scheme is that the conventional thin film electrode is replaced by a 3D nanostructured indium tin oxide (ITO electrode, which was fabricated using RF magnetron sputtering with an anodic aluminum oxide (AAO template. The template was prepared by immersing the barrier-layer side of an AAO film into a 30 wt% phosphoric acid solution to produce a contrasting surface. RF magnetron sputtering was then used to deposit a 3D nanostructured ITO thin film on the template. The crystallinity and conductivity of the 3D ITO films were further enhanced by annealing. Titanium dioxide nanoparticles were electrophoretically deposited on the 3D ITO film after which the proposed DSSC was formed by filling vacant spaces in the 3D nanostructured ITO electrode with dye. The measured solar conversion efficiency of the device was 0.125%. It presents a 5-fold improvement over that of conventional spin-coated TiO2 film electrode DSSCs.

T-Shaped Indan-1,3-dione derivatives as promising electron donors for bulk heterojunction small molecule solar cell

Science.gov (United States)

Adhikari, Tham; Solanke, Parmeshwar; Pathak, Dinesh; Wagner, Tomas; Bureš, Filip; Reed, Tyler; Nunzi, Jean-Michel

2017-07-01

We report on the photovoltaic performance of novel T-Shaped Indan-1,3-dione derivatives as donors in a solution processed bulk heterojunction solar cells. Small molecule bulk heterojunction solar cells of these molecules with [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) were fabricated and characterized. The preliminary characterization of these devices yielded a PCE of 0.24% and 0.33% for two separate derivatives. These low power conversion efficiencies were attributed to a high surface roughness with a large number of dewetting spots. Doping with 10% Polystyrene in the Indan-1,3-dione derivatives decreases surface roughness and dewetting spots thereby improving the efficiency of the devices. Efficiency of the devices was found as 0.39% and 0.51% for two derivatives after doping with polystyrene. The charge transfer mechanism was studied with photoluminescence quenching. The morphology and packing behavior of molecules were further studied using Atomic Force Microscopy (AFM) and X-ray diffraction (XRD).

Modeling nanostructure-enhanced light trapping in organic solar cells

DEFF Research Database (Denmark)

Adam, Jost

A promising approach for improving the power conversion efficiencies of organic solar cells (OSCs) is by incorporating nanostructures in their thin film architecture to improve the light absorption in the device’s active polymer layers. Here, we present a modelling framework for the prediction...... of optical and plasmonic field enhancement by nanostructures in (or close to) the active layers and electrodes in OSCs. We incorporate finite-difference time-domain (FDTD) calculations alongside semi- analytical approaches, as the rigorous coupled-wave analysis (RCWA) and mode-coupling theory. Our simulation...

Novel silicon phases and nanostructures for solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Wippermann, Stefan; He, Yuping; Vörös, Márton; Galli, Giulia

2016-12-01

Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

Planar heterojunction perovskite solar cell based on CdS electron transport layer

KAUST Repository

Abulikemu, Mutalifu

2017-07-02

We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

Planar heterojunction perovskite solar cell based on CdS electron transport layer

KAUST Repository

Abulikemu, Mutalifu; Barbe, Jeremy; El Labban, Abdulrahman; Eid, Jessica; Del Gobbo, Silvano

2017-01-01

We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

Fabrication of Organic Bulk Heterojunction Solar Cells on Flexible Substrates

Science.gov (United States)

Calderon, Gabriel; Merced-Sanabria, Milzaida; Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

2015-03-01

The active layer for the organic solar cells fabricated is composed of P3HT:PCBM, poly(3-hexylthiophene) (P3HT) as electron donor and phenyl-C61-butyric acid methyl ester(PCBM) as electron acceptor. These polymers were used due to their promising characteristics for devices such as bulk heterojunction solar devices. We used polyethylene terephthalate (PET) substrates, a highly flexible plastic, with indium tin oxide (ITO) as the transparent conducting anode for the device, and UV lithography technique to pattern the ITO; this is to facilitate multiple devices on a single substrate. The fabrication process for pattern transfer incorporates developing and etching processes. We diluted the HCl and DI water to etch out the ITO. PEDOT:PSS and active layer of P3HT:PCBM were deposited on (3.0 sq-cm) patterned of ITO/PET by spin coating method. The cathode was thermally evaporated with Al. We characterized the device using a sourcemeter. We also simulated portions of the device using PET on graphene as the substrate.

Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Gollu, Sankara Rao, E-mail: sankar.gollu@gmail.com [Plastic Electronics and Energy Lab (PEEL), Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Ramakant, E-mail: diptig@iitb.ac.in; G, Srinivas, E-mail: diptig@iitb.ac.in; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Lab (PEEL) Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2014-10-15

Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

Efficient inverted bulk-heterojunction polymer solar cells with self-assembled monolayer modified zinc oxide.

Science.gov (United States)

Kim, Wook Hyun; Lyu, Hong-Kun; Han, Yoon Soo; Woo, Sungho

2013-10-01

The performance of poly(3-hexylthiophen) (P3HT) and [6, 6]phenyl C61 butyric acid methyl ester ([60]PCBM)-based inverted bulk-heterojunction (BHJ) polymer solar cells (PSCs) is enhanced by the modification of zinc oxide (ZnO)/BHJ interface with carboxylic-acid-functionalized self-assembled monolayers (SAMs). Under simulated solar illumination of AM 1.5 (100 mW/cm2), the inverted devices fabricated with SAM-modified ZnO achieved an enhanced power conversion efficiency (PCE) of 3.34% due to the increased fill factor and photocurrent density as compared to unmodified cells with PCE of 2.60%. This result provides an efficient method for interface engineering in inverted BHJ PSCs.

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Science.gov (United States)

Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

2018-01-01

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

2015-09-15

A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

Nanostructured refractory thin films for solar applications

Science.gov (United States)

Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

2014-08-01

Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

Pentacene–fullerene bulk-heterojunction solar cell: A computational study

Energy Technology Data Exchange (ETDEWEB)

Pramanik, Anup [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India); Sarkar, Sunandan [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India); Dept. of Physical Chemistry, Palacký University, Olomouc (Czech Republic); Pal, Sougata [Department of Chemistry, University of Gour Banga, Malda 732103 (India); Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India)

2015-06-12

We perform DFT/TDDFT calculations to study the optoelectronic properties of some pentacene-based organic molecules and their derivatives, which can serve as donor moiety when blended with fullerene acceptors in the bulk-heterojunction solar cell model. We are motivated by a recent experiment in which an unoptimized device was shown to have a good photovoltaic performance and we aim to further improve the efficiency of this device. We try to optimize the photovoltaic properties on the basis of a quantum-mechanical calculation of the frontier energy levels and of the absorption properties of individual molecules and of the molecule–fullerine composite. - Highlights: • Optoelectronic properties of pentacene–fullerene nanocomposites are presented. • Photovoltaic properties of the nanocomposites are predicted. • DFT/TDDFT results are in well agreement with available experimental results. • Calculated results give a direction for optimizing device performance.

Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells

International Nuclear Information System (INIS)

Song, Xin; Sun, Po; Chen, Zhi-Kuan; Wang, Weiwei; Ma, Wanli

2015-01-01

We reported a planar heterojunction perovskite solar cell fabricated from MAPbI 3−x Cl x perovskite precursor solution containing 1-chloronaphthalene (CN) additive. The MAPbI 3−x Cl x perovskite films have been characterized by UV-vis, SEM, XRD, and steady-state photoluminescence (PL). UV-vis absorption spectra measurement shows that the absorbance of the film with CN additive is significantly higher than the pristine film and the absorption peak is red shift by 30 nm, indicating the perovskite film with additive possessing better crystal structures. In-situ XRD study of the perovskite films with additive demonstrated intense diffraction peaks from MAPbI 3−x Cl x perovskite crystal planes of (110), (220), and (330). SEM images of the films with additive indicated the films were more smooth and homogenous with fewer pin-holes and voids and better surface coverage than the pristine films. These results implied that the additive CN is beneficial to regulate the crystallization transformation kinetics of perovskite to form high quality crystal films. The steady-state PL measurement suggested that the films with additive contained less charge traps and defects. The planar heterojunction perovskite solar cells fabricated from perovskite precursor solution containing CN additive demonstrated 30% enhancement in performance compared to the devices with pristine films. The improvement in device efficiency is mainly attributed to the good crystal structures, more homogenous film morphology, and also fewer trap centers and defects in the films with the additive

Molecular and Nanoscale Engineering of High Efficiency Excitonic Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Jenekhe, Samson A. [Univ. of Washington, Seattle, WA (United States); Ginger, David S. [Univ. of Washington, Seattle, WA (United States); Cao, Guozhong [Univ. of Washington, Seattle, WA (United States)

2016-01-15

We combined the synthesis of new polymers and organic-inorganic hybrid materials with new experimental characterization tools to investigate bulk heterojunction (BHJ) polymer solar cells and hybrid organic-inorganic solar cells during the 2007-2010 period (phase I) of this project. We showed that the bulk morphology of polymer/fullerene blend solar cells could be controlled by using either self-assembled polymer semiconductor nanowires or diblock poly(3-alkylthiophenes) as the light-absorbing and hole transport component. We developed new characterization tools in-house, including photoinduced absorption (PIA) spectroscopy, time-resolved electrostatic force microscopy (TR-EFM) and conductive and photoconductive atomic force microscopy (c-AFM and pc-AFM), and used them to investigate charge transfer and recombination dynamics in polymer/fullerene BHJ solar cells, hybrid polymer-nanocrystal (PbSe) devices, and dye-sensitized solar cells (DSSCs); we thus showed in detail how the bulk photovoltaic properties are connected to the nanoscale structure of the BHJ polymer solar cells. We created various oxide semiconductor (ZnO, TiO₂) nanostructures by solution processing routes, including hierarchical aggregates and nanorods/nanotubes, and showed that the nanostructured photoanodes resulted in substantially enhanced light-harvesting and charge transport, leading to enhanced power conversion efficiency of dye-sensitized solar cells.

Solution-processed all-oxide bulk heterojunction solar cells based on CuO nanaorod array and TiO2 nanocrystals

Science.gov (United States)

Wu, Fan; Qiao, Qiquan; Bahrami, Behzad; Chen, Ke; Pathak, Rajesh; Tong, Yanhua; Li, Xiaoyi; Zhang, Tiansheng; Jian, Ronghua

2018-05-01

We present a method to synthesize CuO nanorod array/TiO2 nanocrystals bulk heterojunction (BHJ) on fluorine-tin-oxide (FTO) glass, in which single-crystalline p-type semiconductor of the CuO nanorod array is grown on the FTO glass by hydrothermal reaction and the n-type semiconductor of the TiO2 precursor is filled into the CuO nanorods to form well-organized nano-interpenetrating BHJ after air annealing. The interface charge transfer in CuO nanorod array/TiO2 heterojunction is studied by Kelvin probe force microscopy (KPFM). KPFM results demonstrate that the CuO nanorod array/TiO2 heterojunction can realize the transfer of photo-generated electrons from the CuO nanorod array to TiO2. In this work, a solar cell with the structure FTO/CuO nanoarray/TiO2/Al is successfully fabricated, which exhibits an open-circuit voltage (V oc) of 0.20 V and short-circuit current density (J sc) of 0.026 mA cm‑2 under AM 1.5 illumination. KPFM studies indicate that the very low performance is caused by an undesirable interface charge transfer. The interfacial surface potential (SP) shows that the electron concentration in the CuO nanorod array changes considerably after illumination due to increased photo-generated electrons, but the change in the electron concentration in TiO2 is much less than in CuO, which indicates that the injection efficiency of the photo-generated electrons from CuO to TiO2 is not satisfactory, resulting in an undesirable J sc in the solar cell. The interface photovoltage from the KPFM measurement shows that the low V oc results from the small interfacial SP difference between CuO and TiO2 because the low injected electron concentration cannot raise the Fermi level significantly in TiO2. This conclusion agrees with the measured work function results under illumination. Hence, improvement of the interfacial electron injection is primary for the CuO nanorod array/TiO2 heterojunction solar cells.

A new strategy to engineer polymer bulk heterojunction solar cells with thick active layers via self-assembly of the tertiary columnar phase.

Science.gov (United States)

Li, Hongfei; Yang, Zhenhua; Pan, Cheng; Jiang, Naisheng; Satija, Sushil K; Xu, Di; Gersappe, Dilip; Nam, Chang-Yong; Rafailovich, Miriam H

2017-08-17

We report that the addition of a non-photoactive tertiary polymer phase in the binary bulk heterojunction (BHJ) polymer solar cell leads to a self-assembled columnar nanostructure, enhancing the charge mobilities and photovoltaic efficiency with surprisingly increased optimal active blend thicknesses over 300 nm, 3-4 times larger than that of the binary counterpart. Using the prototypical poly(3-hexylthiophene) (P3HT):fullerene blend as a model BHJ system, we discover that the inert poly(methyl methacrylate) (PMMA) added in the binary BHJ blend self-assembles into vertical columns, which not only template the phase segregation of electron acceptor fullerenes but also induce the out-of-plane rotation of the edge-on-orientated crystalline P3HT phase. Using complementary interrogation methods including neutron reflectivity, X-ray scattering, atomic force microscopy, transmission electron microscopy, and molecular dynamics simulations, we show that the enhanced charge transport originates from the more randomized molecular stacking of the P3HT phase and the spontaneous segregation of fullerenes at the P3HT/PMMA interface, driven by the high surface tension between the two polymeric components. The results demonstrate a potential method for increasing the thicknesses of high-performance polymer BHJ solar cells with improved photovoltaic efficiency, alleviating the burden of stringently controlling the ultrathin blend thickness during the roll-to-roll-type large-area manufacturing environment.

Lead Acetate Based Hybrid Perovskite Through Hot Casting for Planar Heterojunction Solar Cells

Science.gov (United States)

Shin, Gwang Su; Choi, Won-Gyu; Na, Sungjae; Gökdemir, Fatma Pinar; Moon, Taeho

2018-03-01

Flawless coverage of a perovskite layer is essential in order to achieve realistic high-performance planar heterojunction solar cells. We present that high-quality perovskite layers can be efficiently formed by a novel hot casting route combined with MAI (CH3NH3I) and non-halide lead acetate (PbAc2) precursors under ambient atmosphere. Casting temperature is controlled to produce various perovskite microstructures and the resulted crystalline layers are found to be comprised of closely packed islands with a smooth surface structure. Lead acetate employed perovskite solar cells are fabricated using PEDOT:PSS and PCBM charge transporting layers, in p- i- n type planar architecture. Especially, the outstanding open-circuit voltage demonstrates the high crystallinity and dense coverage of the produced perovskite layers by this facile route.

Novel Terthiophene-Substituted Fullerene Derivatives as Easily Accessible Acceptor Molecules for Bulk-Heterojunction Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Filippo Nisic

2014-01-01

Full Text Available Five fulleropyrrolidines and methanofullerenes, bearing one or two terthiophene moieties, have been prepared in a convenient way and well characterized. These novel fullerene derivatives are characterized by good solubility and by better harvesting of the solar radiation with respect to traditional PCBM. In addition, they have a relatively high LUMO level and a low band gap that can be easily tuned by an adequate design of the link between the fullerene and the terthiophene. Preliminary results show that they are potential acceptors for the creation of efficient bulk-heterojunction solar cells based on donor polymers containing thiophene units.

Periodic nanostructures on unpolished substrates and their integration in solar cells

International Nuclear Information System (INIS)

Cornago, I; Dominguez, S; Bravo, J; Ezquer, M; Rodríguez, M J; Lagunas, A R; Pérez-Conde, J; Rodriguez, R

2015-01-01

We present a novel fabrication process based on laser interference lithography, lift-off and reactive ion etching, which allows us to fabricate periodic nanostructures on photovoltaic substrates with an average root mean square (RMS) roughness of 750 nm. We fabricate nanostructures on unpolished crystalline silicon substrates, which reduces their reflectance 30% as fabricated. When an additional passivation layer is deposited, the light trapping grows, achieving a reflectance reduction of 60%. In addition, we have successfully integrated the nanostructured substrates in silicon wafer–based solar cells following standard processes, achieving a final efficiency of 15.56%. (paper)

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope.

Science.gov (United States)

Bäcke, Olof; Lindqvist, Camilla; de Zerio Mendaza, Amaia Diaz; Gustafsson, Stefan; Wang, Ergang; Andersson, Mats R; Müller, Christian; Kristiansen, Per Magnus; Olsson, Eva

2017-05-01

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV-vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000kGy. Copyright © 2016 Elsevier B.V. All rights reserved.

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

Science.gov (United States)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

Trade-off between Photon Management Efficacy and Material Quality in Thin-Film Solar Cells on Nanostructured Substrates of High Aspect Ratio Structures

Directory of Open Access Journals (Sweden)

Alan H. Chin

2018-04-01

Full Text Available Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in the open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. This observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.

Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

Science.gov (United States)

Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

2017-01-18

A solar-blind photodetector based on β-Ga 2 O 3 /NSTO (NSTO = Nb:SrTiO 3 ) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga 2 O 3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τ d = 0.07 s) and the ratio I photo /I dark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm 2 . Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga 2 O 3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm 2 of 254 nm light illumination, the photodetector exhibits a responsivity R λ of 43.31 A/W and an external quantum efficiency of 2.1 × 10 4 %. The photo-to-electric conversion mechanism in the β-Ga 2 O 3 /NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga 2 O 3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode

Science.gov (United States)

Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

2018-05-01

In this work, we have fabricated the nanostructured p-Si/n-TiO2 hetero-junction diode by using a facile spin-coating method. The XRD analysis suggests the presence of well crystalline anatase TiO2 film on Si with small grain size (˜16 nm). We have drawn the band alignment using Anderson model to understand the electrical transport across the junction. The current-voltage (J-V) characteristics analysis reveals the good rectification ratio (103 at ± 3 V) and slightly higher ideality factor (4.7) of our device. The interface states are responsible for the large ideality factor as Si/TiO2 form a dissimilar interface and possess a large number of dangling bonds. The study reveals the promises to be used Si/TiO2 diode as an alternative to the traditional p-n homo-junction diode, which typically require high budget.

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

Science.gov (United States)

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

Science.gov (United States)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Efficiency increase in flexible bulk heterojunction solar cells with a nano-patterned indium zinc oxide anode

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong Hwan; Seifter, Jason; Heeger, Alan J. [Center for Polymers and Organic Solids, University of California at Santa Barbara, Santa Barbara, California 93106-5090 (United States); Park, Jong Hyeok [School of Chemical Engineering and SAINT, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Choi, Dae-Geun [Nano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), 171 Jang-dong, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2012-11-15

Efficient flexible bulk-heterojunction polymer solar cells based on PCDTBT/PC{sub 70}BM were successfully fabricated by a simple nano-imprint technique. The flexible nano-patterned IZO anode with ordered periodic dot structures led to improved light absorption and increased interfacial contact area between the anode and polymer as well as between the polymer and cathode. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synergistic Impact of Solvent and Polymer Additives on the Film Formation of Small Molecule Blend Films for Bulk Heterojunction Solar Cells

KAUST Repository

McDowell, Caitlin; Abdelsamie, Maged; Zhao, Kui; Smilgies, Detlef M.; Bazan, Guillermo C.; Amassian, Aram

2015-01-01

The addition of polystyrene (PS), a typical insulator, is empirically shown to increase the power conversion efficiencies (PCEs) of a solution-deposited bulk heterojunction (BHJ) molecular blend film used in solar cell fabrication: p-DTS(FBTTh2)2/PC

Solution-Processed Organic Solar Cells from Dye Molecules: An Investigation of Diketopyrrolopyrrole:Vinazene Heterojunctions

KAUST Repository

Walker, Bright

2012-01-25

Although one of the most attractive aspects of organic solar cells is their low cost and ease of fabrication, the active materials incorporated into the vast majority of reported bulk heterojunction (BHJ) solar cells include a semiconducting polymer and a fullerene derivative, classes of materials which are both typically difficult and expensive to prepare. In this study, we demonstrate that effective BHJs can be fabricated from two easily synthesized dye molecules. Solar cells incorporating a diketopyrrolopyrrole (DPP)-based molecule as a donor and a dicyanoimidazole (Vinazene) acceptor function as an active layer in BHJ solar cells, producing relatively high open circuit voltages and power conversion efficiencies (PCEs) up to 1.1%. Atomic force microscope images of the films show that active layers are rough and apparently have large donor and acceptor domains on the surface, whereas photoluminescence of the blends is incompletely quenched, suggesting that higher PCEs might be obtained if the morphology could be improved to yield smaller domain sizes and a larger interfacial area between donor and acceptor phases. © 2011 American Chemical Society.

Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

KAUST Repository

Tsai, Meng-Lin

2015-12-16

By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

KAUST Repository

Tsai, Meng-Lin; Tu, Wei-Chen; Tang, Libin; Wei, Tzu-Chiao; Wei, Wan-Rou; Lau, Shu Ping; Chen, Lih-Juann; He, Jr-Hau

2015-01-01

By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

Ultraviolet–Visible photo-response of p-Cu2O/n-ZnO heterojunction prepared on flexible (PET) substrate

International Nuclear Information System (INIS)

Elfadill, Nezar G.; Hashim, M.R.; Saron, K.M.A.; Chahrour, Khaled M.; Qaeed, M.A.; Bououdina, M.

2015-01-01

The deposition of monocrystalline ZnO nanostructures (using different concentration of reaction solution) on Cu 2 O thin film by hydrothermal method is reported. The mechanism of growing different ZnO nanostructures i.e. nanoneedles, nanotubes and nanorods are explained based on the gradient of Zn + species (resulting from precipitation) in reaction solution. The UV-VIS photo-detection properties of the three selected p-Cu 2 O/n-ZnO heterojunctions are studied by illuminated I–V characteristic and the wavelength dependent photo-responsivity properties. The spectral responsivity curves can be divided into three regions (1.9–2.17 eV), (2.2–2.9 eV) and (>3.2 eV) denoted as A, B and C. The regions A and C are assigned for band to band level absorption in Cu 2 O and ZnO respectively, while region C is associated with a combination of two absorption process: part of photons were absorbed by the band to deep level absorption in ZnO and the transmitted photons were absorbed in Cu 2 O. It is found that the heterojunctions with nanotubes exhibit higher responsivity than other nanostructures, which is mainly due to the large surface-to-volume ratio. - Highlights: • Fabrication of p-Cu 2 O/n-ZnO heterojunction on flexible PET substrate. • Synthesis of different ZnO nanostructures i.e. nanoneedles, nanotubes and nanorods. • The UV-VIS photo-detection properties of p-Cu 2 O/n-ZnO heterojunctions

Study of a ternary blend system for bulk heterojunction thin film solar cells

Science.gov (United States)

Ahmad, Zubair; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

2016-08-01

In this research, we report a bulk heterojunction (BHJ) solar cell consisting of a ternary blend system. Poly(3-hexylthiophene) P3HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester (PCBM) plays the role of acceptor whereas vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine (VOPcPhO) is selected as an ambipolar transport material. The materials are selected and assembled in such a fashion that the generated charge carriers could efficiently be transported rightwards within the blend. The organic BHJ solar cells consist of ITO/PEDOT:PSS/ternary BHJ blend/Al structure. The power conversion efficiencies of the ITO/ PEDOT:PSS/P3HT:PCBM/Al and ITO/PEDOT:PSS/ P3HT:PCBM:VOPcPhO/Al solar cells are found to be 2.3% and 3.4%, respectively. This publication was made possible by PDRA (Grant No. PDRA1-0117-14109) from the Qatar National Research Fund (a member of Qatar Foundation). The findings achieved herein are solely the responsibility of the authors.

Fabrication of AgInSe2 heterojunction solar cell

Science.gov (United States)

Khudayer, Iman Hameed

2018-05-01

Silver, Indium Selenium thin film with a thickness (5001±30) nm, deposited by thermal evaporation methods at RT and annealing3temperature (Ta = 400, 500 and 600) K on a substrate of glass to study structural and optical properties of thin films and on p-Si wafer to fabricate the AgInSe2/p-Si heterojunction solar cell. XRD analysis shows that the AgInSe2 (AIS) deposited film at RT and annealing3temperature (Ta = 400, 500 and 600) K have polycrystalline structure. The average grain size has been estimated from AFM images. The energy gap was estimated from the optical transmittance using a spectrometer type (UV.-Visible 1800 spectra photometer). From I-V characterization, the photovoltaic parameters such as, open-circuit voltage, short-circuit current density, fill factor, ideality factor, and efficiencies, were computed. As well as the built-in potential, carrier concentration and depletion width were determined under RT and (Ta = 400, 500 and 600) K from C-V measurement.

Functionalized nanostructures for enhanced photocatalytic performance under solar light

Directory of Open Access Journals (Sweden)

Liejin Guo

2014-07-01

Full Text Available Photocatalytic hydrogen production from water has been considered to be one of the most promising solar-to-hydrogen conversion technologies. In the last decade, various functionalized nanostructures were designed to address the primary requirements for an efficient photocatalytic generation of hydrogen by using solar energy: visible-light activity, chemical stability, appropriate band-edge characteristics, and potential for low-cost fabrication. Our aim is to present a short review of our recent attempts that center on the above requirements. We begin with a brief introduction of photocatalysts coupling two or more semiconductors, followed by a further discussion of the heterostructures with improved matching of both band structures and crystal lattices. We then elaborate on the heterostructure design of the targeted materials from macroscopic regulation of compositions and phases, to the more precise control at the nanoscale, i.e., materials with the same compositions but different phases with certain band alignment. We conclude this review with perspectives on nanostructure design that might direct future research of this technology.

Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

Science.gov (United States)

Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

2016-12-01

A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

OpenAIRE

Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

2012-01-01

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

Array of titanium dioxide nanostructures for solar energy utilization

Science.gov (United States)

Qiu, Xiaofeng; Parans Paranthaman, Mariappan; Chi, Miaofang; Ivanov, Ilia N; Zhang, Zhenyu

2014-12-30

An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

Rational Design of Zinc Phosphide Heterojunction Photovoltaics

Science.gov (United States)

Bosco, Jeffrey Paul

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (α-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10. 4cm-1), and long minority-carrier diffusion length (>5 μm), Zn3P 2 is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn 3P2 device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn3P 2 which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn3P2 interfaces, an ideal heterojunction partner has not yet been found. The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn3P2 absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn3P2 on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn3P2 epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn3P2 and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn3P 2 PV device. Finally, various II-VI/Zn3P2 heterojunction solar cells designs are

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

KAUST Repository

Onyegam, Emmanuel U.; Sarkar, Dabraj; Hilali, Mohamed M.; Saha, Sayan; Mathew, Leo; Rao, Rajesh A.; Smith, Ryan S.; Xu, Dewei; Jawarani, Dharmesh; Garcia, Ricardo; Ainom, Moses; Banerjee, Sanjay K.

2014-01-01

Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

KAUST Repository

Onyegam, Emmanuel U.

2014-04-14

Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

High efficient photocatalytic activity from nanostructuralized photonic crystal-like p-n coaxial hetero-junction film photocatalyst of Cu3SnS4/TiO2 nanotube arrays

Science.gov (United States)

Li, Yan; Liu, Fang-Ting; Chang, Yin; Wang, Jian; Wang, Cheng-Wei

2017-12-01

Structuring the materials in the form of photonic crystals is a new strategy for photocatalytic applications. Herein, a new concept of photonic crystal-induced p-n coaxial heterojunction film photocatalyst of Cu3SnS4/TiO2 (CTS/PhC-TNAs) was well-designed and successfully fabricated by combining periodic pulse anodic oxidation and in-situ self-assembling methods Such nanostructured CTS/PhC-TNAs exhibited significantly improved photocatalytic degradation activity under simulated sunlight irradiation with methyl orange (MO) as the target pollutants. Within 120 min, 82% of the MO (10 mg/L) was photodegraded and its kinetic constant per specific surface area reached 0.05332 μmol/m2h, which is 1.6 and 12.8 times more quickly than that of PhC-TNAs and CTS, respectively. Its significantly enhanced photocatalytic activity could be mainly attributed to a joint effect of the unique photonic crystal property of PhC-TNAs and the nanostructured hollow p-n coaxial hetero-junction, which result in an increased efficiency of charge separation and transfer and also an improved spectral response capability. This photonic crystal film photocatalyst has the potential for enhancing the photocatalytic activity via further optimizing the photonic stop band of PhC-TNAs. The study presents a new means to design the kind of photonic crystal structural-induced novel photocatalysts with high photocatalytic activities in pollution treatment.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J

2013-12-10

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

Directory of Open Access Journals (Sweden)

Ivan Litzov

2013-12-01

Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

Science.gov (United States)

Litzov, Ivan; Brabec, Christoph J.

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

Performance and stability of P3HT/PCBM bulk heterojunction organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Yumnam, Nivedita; Bom, Sidhant; Wagner, Veit [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany)

2011-07-01

Organic photovoltaic cells are promising candidates for large-area, low-cost production of solar cells. However, the low stability in conjunction with their medium performance is one of the major drawbacks in comparison to their inorganic counterparts. In this investigation environmental conditions for degradation of bulk heterojunction P3HT/PCBM solar cells are systematically analyzed over a period of one week. Devices were prepared by spin coating from different compositions of P3HT and PCBM in Chlorobenzene (C{sub 6}H{sub 5}Cl). Performance parameters, efficiency and I-V characteristics were determined in a N{sub 2} glove box showing optimized efficiency for a 1:1 ratio. Degradation behavior in N{sub 2} atmosphere, vacuum and solvent-enriched atmosphere (Chlorobenzene) showed best results for vacuum stored solar cells while for solvent-enriched atmosphere rapid degradation was observed. Remarkable degradation (open-circuit voltage and short-circuit current reduced to 90% and 60% after one week) was also found for N{sub 2} atmosphere of the glove box used for the solar cell production. Residual solvent vapor left dispersed in the atmosphere of the glovebox after the spin coating process is identified as an important parameter of this degradation.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V.; Yoon, Jongseung

2017-04-12

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

Investigation of silicon heterojunction solar cells by photoluminescence under DC-bias

Directory of Open Access Journals (Sweden)

Courtois Guillaume

2013-09-01

Full Text Available Photoluminescence measurements on solar cells are usually carried out under open-circuit conditions. We report here on an innovative approach, in which the samples are simultaneously illuminated and DC-biased, so that the luminescence can be monitored under several operating points, that is to say several injection levels, ranging from short-circuit conditions to the light-emitting regime of the device. The experiments were performed on in-house made c-Si/a-Si:H heterojunction solar cells illuminated by a continuous green laser diode and positively biased. The luminescence spectra obtained this way were compared to those obtained with no light excitation source, which corresponds to usual electroluminescence mode and dark J(V. Firstly, the obtained luminescence spectra have shown the expected exponential dependence on the applied voltage. Furthermore, given that the amplitude of the emitted luminescence is proportional to the radiative recombination rate, this approach enables to indirectly characterise the non-radiative recombination phenomena. In the case of HJ solar cells with intrinsic thin layers processed on high quality FZ-wafers, non-radiative recombination is dominated by the defects at the c-Si/a-Si:H interface. The luminescence measurements presented here therefore give information on the quality of the surface passivation. An estimation of the interface defect density was achieved by comparing our experimental results with modelling.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

Energy Technology Data Exchange (ETDEWEB)

Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Thieno[3,4-c]pyrrole-4,6-dione-3,4-difluorothiophene Polymer Acceptors for Efficient All-Polymer Bulk Heterojunction Solar Cells

KAUST Repository

Liu, Shengjian

2016-09-16

Branched-alkyl-substituted poly(thieno[3,4-c]pyrrole-4,6-dione-alt-3,4-difluorothiophene) (PTPD[2F]T) can be used as a polymer acceptor in bulk heterojunction (BHJ) solar cells with a low-band-gap polymer donor (PCE10) commonly used with fullerenes. The

Small molecule solution-processed bulk heterojunction solar cells with inverted structure using porphyrin donor

Science.gov (United States)

Yamamoto, Takaki; Hatano, Junichi; Nakagawa, Takafumi; Yamaguchi, Shigeru; Matsuo, Yutaka

2013-01-01

Utilizing tetraethynyl porphyrin derivative (TE-Por) as a small molecule donor material, we fabricated a small molecule solution-processed bulk heterojunction (BHJ) solar cell with inverted structure, which exhibited 1.6% power conversion efficiency (JSC (short-circuit current) = 4.6 mA/cm2, VOC (open-circuit voltage) = 0.90 V, and FF (fill factor) = 0.39) in the device configuration indium tin oxide/TiOx (titanium sub-oxide)/[6,6]-phenyl-C61-butyric acid methyl ester:TE-Por (5:1)/MoOx (molybdenum sub-oxide)/Au under AM1.5 G illumination at 100 mW/cm2. Without encapsulation, the small molecule solution-processed inverted BHJ solar cell also showed remarkable durability to air, where it kept over 73% of its initial power conversion efficiency after storage for 28 days under ambient atmosphere in the dark.

Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2012-02-01

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

Self-assembly 2D zinc-phthalocyanine heterojunction: An ideal platform for high efficiency solar cell

Science.gov (United States)

Jiang, Xue; Jiang, Zhou; Zhao, Jijun

2017-12-01

As an alternative to silicon-based solar cells, organic photovoltaic cells emerge for their easy manufacture, low cost, and light weight but are limited by their less stability, low power conversion efficiencies, and low charge carrier mobilities. Here, we design a series of two-dimensional (2D) organic materials incorporating zinc-phthalocyanine (ZnPc) based building blocks which can inherit their excellent intrinsic properties but overcome those shortcomings. Our first-principles calculation shows that such 2D ZnPc-based materials exhibit excellent thermal stabilities, suitable bandgaps, small effective masses, and good absorption properties. The additional benzene rings and nitrogen atoms incorporated between ZnPc molecules are mainly responsible for the modifications of electronic and optical properties. Moreover, some heterojunction solar cells constructed using those 2D ZnPc monolayers as the donor and acceptor have an appropriate absorber gap and interface band alignment. Among them, a power conversion efficiency up to 14.04% is achieved, which is very promising for the next-generation organic solar cells.

Potential effect of CuInS2/ZnS core-shell quantum dots on P3HT/PEDOT:PSS heterostructure based solar cell

Science.gov (United States)

Jindal, Shikha; Giripunje, S. M.

2018-07-01

Nanostructured quantum dots (QDs) are quite promising in the solar cell application due to quantum confinement effect. QDs possess multiple exciton generation and large surface area. The environment friendly CuInS2/ZnS core-shell QDs were prepared by solvothermal method. Thus, the 3 nm average sized CuInS2/ZnS QDs were employed in the bulk heterojunction device and the active blend layer consisting of the P3HT and CuInS2/ZnS QDs was investigated. The energy level information of CuInS2/ZnS QDs as an electron acceptor was explored by ultra violet photoelectron spectroscopy. Bulk heterojunction hybrid device of ITO/PEDOT:PSS/P3HT: (CuInS2/ZnS QDs)/ZnO/Ag was designed by spin coating approach and its electrical characterization was investigated by solar simulator. Current density - voltage characteristics shows the enhancement in power conversion efficiency with increasing concentration of CuInS2/ZnS QDs in bulk heterojunction device.

Toward Eco-Friendly and Highly Efficient Solar Water Splitting Using In2S3/Anatase/Rutile TiO2 Dual-Staggered-Heterojunction Nanodendrite Array Photoanode.

Science.gov (United States)

Yang, Jih-Sheng; Wu, Jih-Jen

2018-01-31

The TiO 2 -based heterojunction nanodendrite (ND) array composed of anatase nanoparticles (ANPs) on the surface of the rutile ND (RND) array is selected as the model photoanode to demonstrate the strategies toward eco-friendly and efficient solar water splitting using neutral electrolyte and seawater. Compared with the performances in alkaline electrolyte, a non-negligible potential drop across the electrolyte as well as impeded charge injection and charge separation is monitored in the ANP/RND array photoanode with neutral electrolyte, which are, respectively, ascribed to the series resistance of neutral electrolyte, the fundamentally pH-dependent water oxidation mechanism on TiO 2 surface, as well as the less band bending at the interface of TiO 2 and neutral electrolyte. Accordingly, a TiO 2 -based dual-staggered heterojunction ND array photoanode is further designed in this work to overcome the issue of less band bending with the neutral electrolyte. The improvement of charge separation efficiency is realized by the deposition of a transparent In 2 S 3 layer on the ANP/RND array photoanode for constructing additional staggered heterojunction. Under illumination of AM 1.5G (100 mW cm -2 ), the improved photocurrent densities acquired both in neutral electrolyte and seawater at 1.23 V vs reversible hydrogen electrode (RHE), which approach the theoretical value for rutile TiO 2 , are demonstrated in the dual-staggered-heterojunction ND array photoanode. Faradaic efficiencies of ∼95 and ∼32% for solar water oxidation in neutral electrolyte and solar seawater oxidation for 2 h are acquired at 1.23 V vs RHE, respectively.

Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

KAUST Repository

Kobayashi, Eiji

2017-06-24

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20Wm (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000Wm); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

An Organic D-π-A Dye for Record Efficiency Solid-State Sensitized Heterojunction Solar Cells

KAUST Repository

Cai, Ning

2011-04-13

The high molar absorption coefficient organic D-π-A dye C220 exhibits more than 6% certified electric power conversion efficiency at AM 1.5G solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis(N,N-dimethoxyphenylamine)-9,9′- spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This contributes to a new record (6.08% by NREL) for this type of sensitized heterojunction photovoltaic device. Efficient charge generation is proved by incident photon-to-current conversion efficiency spectra. Transient photovoltage and photocurrent decay measurements showed that the enhanced performance achieved with C220 partially stems from the high charge collection efficiency over a wide potential range. © 2011 American Chemical Society.

Bulk Heterojunction Solar Cell Devices Prepared with Composites of Conjugated Polymer and Zinc Oxide Nanorods

Directory of Open Access Journals (Sweden)

Nguyen Tam Nguyen Truong

2017-01-01

Full Text Available ZnO nanorods (Nrods with ~20–50 nm lengths were synthesized using an aqueous solution of zinc acetate and glacial acetic acid. Bulk heterojunction solar cells were fabricated with the structure of indium tin oxide (ITO/polyethylenedioxythiophene doped with polystyrene-sulfonic acid (PEDOT:PSS/ZnO-Nrods + polymer/electron transport layer (ETL/Al. Current density-voltage characterization of the resulting cells showed that, by adding an ETL and using polymers with a low band gap energy, the photoactive layer surface morphology and the device performance can be dramatically improved.

Solvent additive effects on small molecule crystallization in bulk heterojunction solar cells probed during spin casting

KAUST Repository

Pérez, Louis A.

2013-09-04

Solvent additive processing can lead to drastic improvements in the power conversion efficiency (PCE) in solution processable small molecule (SPSM) bulk heterojunction solar cells. In situ grazing incidence wide-angle X-ray scattering is used to investigate the kinetics of crystallite formation during and shortly after spin casting. The additive is shown to have a complex effect on structural evolution invoking polymorphism and enhanced crystalline quality of the donor SPSM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solvent additive effects on small molecule crystallization in bulk heterojunction solar cells probed during spin casting

KAUST Repository

Pé rez, Louis A.; Chou, Kang Wei; Love, John A.; Van Der Poll, Thomas S.; Smilgies, Detlef Matthias; Nguyen, Thuc Quyen; Krä mer, Edward J.; Amassian, Aram; Bazan, Guillermo C.

2013-01-01

Solvent additive processing can lead to drastic improvements in the power conversion efficiency (PCE) in solution processable small molecule (SPSM) bulk heterojunction solar cells. In situ grazing incidence wide-angle X-ray scattering is used to investigate the kinetics of crystallite formation during and shortly after spin casting. The additive is shown to have a complex effect on structural evolution invoking polymorphism and enhanced crystalline quality of the donor SPSM. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photon absorption models in nanostructured semiconductor solar cells and devices

CERN Document Server

Luque, Antonio

2015-01-01

This book is intended to be used by materials and device physicists and also solar cells researchers. It models the performance characteristics of nanostructured solar cells and resolves the dynamics of transitions between several levels of these devices. An outstanding insight into the physical behaviour of these devices is provided, which complements experimental work. This therefore allows a better understanding of the results, enabling the development of new experiments and optimization of new devices. It is intended to be accessible to researchers, but also to provide engineering tools w

Sandwich-cell-type bulk-heterojunction organic solar cells utilizing liquid crystalline phthalocyanine

Science.gov (United States)

Nakata, Yuya; Usui, Toshiki; Nishikawa, Yuki; Nekelson, Fabien; Shimizu, Yo; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Sandwich-cell-type bulk-heterojunction organic solar cells utilizing the liquid crystalline phthalocyanine, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), have been fabricated and their photovoltaic properties have been studied. The short-circuit current (J SC) and power conversion efficiency (PCE) depended on the blend ratio of donor and acceptor molecules, and the maximum performance, such as J SC of 3.4 mA/cm2 and PCE of 0.67%, was demonstrated, when the blend ratio of the acceptor was 10 mol %. The photovoltaic properties were discussed by taking the relationship between the column axis direction of C6PcH2 and the carrier mobility in the active layer into consideration.

How the relative permittivity of solar cell materials influences solar cell performance

DEFF Research Database (Denmark)

Crovetto, Andrea; Huss-Hansen, Mathias K.; Hansen, Ole

2017-01-01

of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration and materials properties, there are scenarios where the relative permittivity has a major......The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate the validity of such an approach. Specifically, we show the effect...... the heterojunction partner has a high permittivity, solar cells are consistently more robust against several non-idealities that are especially likely to occur in early-stage development, when the device is not yet optimized....

Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

Science.gov (United States)

Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

2018-04-01

Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

International Nuclear Information System (INIS)

Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

2015-01-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

Science.gov (United States)

Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

2015-03-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

2012-12-15

The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Naphtho[2,1-b:3,4-b']dithiophene-based bulk heterojunction solar cells: how molecular structure influences nanoscale morphology and photovoltaic properties.

Science.gov (United States)

Kim, Yu Jin; Cheon, Ye Rim; Back, Jang Yeol; Kim, Yun-Hi; Chung, Dae Sung; Park, Chan Eon

2014-11-10

Organic bulk heterojunction photovoltaic devices based on a series of three naphtho[2,1-b:3,4-b']dithiophene (NDT) derivatives blended with phenyl-C71-butyric acid methyl ester were studied. These three derivatives, which have NDT units with various thiophene-chain lengths, were employed as the donor polymers. The influence of their molecular structures on the correlation between their solar-cell performances and their degree of crystallization was assessed. The grazing-incidence angle X-ray diffraction and atomic force microscopy results showed that the three derivatives exhibit three distinct nanoscale morphologies. We correlated these morphologies with the device physics by determining the J-V characteristics and the hole and electron mobilities of the devices. On the basis of our results, we propose new rules for the design of future generations of NDT-based polymers for use in bulk heterojunction solar cells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

International Nuclear Information System (INIS)

Long Yunze; Yin Zhihua; Hui Wen; Chen Zhaojia; Wan Meixiang

2008-01-01

This paper reports that the Schottky junctions between low work function metals (e.g. Al and In) and doped semiconducting polymer pellets (e.g. polyaniline (PANI) microsphere pellet and polypyrrole (PPy) nanotube pellet) have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I – V characteristic curves (rectifying ratio γ = 5 at ±6 V bias at room temperature). As compared to the Al/PANI/Ag, the heterojunction between In and PANI (In/PANI/Ag) exhibits a lower rectifying ratio γ = 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag (γ = 3.2 at ±1.6 V bias) and In/PPy/Ag (γ = 1.2 at ±3.0 V bias). The results were discussed in terms of thermoionic emission theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Structural, electronic and transport properties of armorphous/crystalline silicon heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Schulze, Tim Ferdinand

2011-06-15

The present dissertation is concerned with the physical aspects of the a-Si:H/c-Si heterojunction in the context of PV research. In a first step, the technological development which took place in the framework of the thesis is summarized. Its main constituent was the development and implementation of ultrathin ({<=}10 nm) undoped a-Si:H[(i)a-Si:H] layers to improve the passivation of the c-Si surface with the goal of increasing the open-circuit voltage of the solar cell. It is shown that the effect of (i)a-Si:H interlayers depends on the c-Si substrate doping type, and that challenges exist particularly on the technologically more relevant (n)c-Si substrate. A precise optimization of (i)a-Si:H thickness and the doping level of the following a-Si:H top layers is required to realize an efficiency gain in the solar cell. In this chapter, the key scientific questions to be tackled in the main part of the thesis are brought up by the technological development. In the next chapter, the charge carrier transport through a-Si:H/c-Si heterojunctions is investigated making use of current-voltage (I/V) characteristics taken at different temperatures. The dominant transport mechanisms in a-Si:H/c-Si heterojunctions are identified, and the relevance for solar cell operation is discussed. It is found that in the bias regime relevant for solar cell operation, the theoretical framework for the description of carrier transport in classical c-Si solar cells applies as well, which enables to use I/V curves for a simple characterization of a-Si:H/c-Si structures. The next chapter deals with the microscopic characterization of ultrathin a-Si:H layers. Employing infrared spectroscopy, spectroscopic ellipsometry, photoelectron spectroscopy and secondary ion mass spectroscopy, the structural, electronic and optical properties of (i)a-Si:H are analyzed. It is found that ultrathin a-Si:H essentially behaves like layers of 10..100 times the thickness. This represents the basis for the

Hybrid resonant organic-inorganic nanostructures for novel light emitting devices and solar cells

Energy Technology Data Exchange (ETDEWEB)

Agranovich, Vladimir M. [Institute of Spectroscopy, Russian Academy of Science, Troitsk, Moscow (Russian Federation); Chemistry Department, University of Texas at Dallas, Texas (United States); Rupasov, Valery I. [ANTEOS, Inc., Shrewsbury, Massachusetts 01545 (United States); Silvestri, Leonardo [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

2010-06-15

The energy transfer from an inorganic layer to an organic component of resonant hybrid organic/inorganic nanos-tructures can be used for creation of new type of LED. We mentioned the problem of electrical pumping which has to be solved. As was first suggested in 1979 by Dexter the transfer energy in opposite direction from organic part of nanostructure to semiconductor layer can be used for the creation of new type of solar cells. In this note we stress the importance of the idea by Dexter for photovoltaics and solar cells. We argue that the organic part in such hybrid structures can play a role of an effective organic collector of the light energy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Self-assembly graphitic carbon nitride quantum dots anchored on TiO_2 nanotube arrays: An efficient heterojunction for pollutants degradation under solar light

International Nuclear Information System (INIS)

Su, Jingyang; Zhu, Lin; Geng, Ping; Chen, Guohua

2016-01-01

Highlights: • Carbon nitride quantum dots (CNQDs) were decorated onto TiO_2 nanotube arrays (NTAs). • The CNQDs/TiO_2 NTAs exhibits much improved photoelectrochemical activity. • The heterojunction displays efficient removal efficiencies for RhB and phenol. • Pollutants degradation mechanism over CNQDs/TiO_2 NTAs was clarified. - Abstract: In this study, an efficient heterojunction was constructed by anchoring graphitic carbon nitride quantum dots onto TiO_2 nanotube arrays through hydrothermal reaction strategy. The prepared graphitic carbon nitride quantum dots, which were prepared by solid-thermal reaction and sequential dialysis process, act as a sensitizer to enhance light absorption. Furthermore, it was demonstrated that the charge transfer and separation in the formed heterojunction were significantly improved compared with pristine TiO_2. The prepared heterojunction was used as a photoanode, exhibiting much improved photoelectrochemical capability and excellent photo-stability under solar light illumination. The photoelectrocatalytic activities of prepared heterojunction were demonstrated by degradation of RhB and phenol in aqueous solution. The kinetic constants of RhB and phenol degradation using prepared photoelectrode are 2.4 times and 4.9 times higher than those of pristine TiO_2, respectively. Moreover, hydroxyl radicals are demonstrated to be dominant active radicals during the pollutants degradation.

Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

Science.gov (United States)

Xiao, Sanshui; Mortensen, Niels A.

2012-10-01

Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Luis G. Gerling

2015-10-01

Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

Inverted bulk-heterojunction organic solar cell using chemical bath deposited titanium oxide as electron collection layer

OpenAIRE

Kuwabara, Takayuki; Sugiyama, Hirokazu; Kuzuba, Mitsuhiro　　; Yamaguchi, Takahiro; Takahashi, Kohshin

2010-01-01

Chemical bath deposited titanium oxide (TiOx ) as an electron collection layer is introduced between the organic layer and the indium tin oxide (ITO) electrode for improving the performance of inverted bulk-heterojunction organic thin film solar cells with 1 cm2 active area, where regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were mainly used as the photo-active layer. The uniform and thin TiOx film was easily prepared onto the ITO electrode ...

Formulation strategies for optimizing the morphology of polymeric bulk heterojunction organic solar cells: a brief review

Science.gov (United States)

Vongsaysy, Uyxing; Bassani, Dario M.; Servant, Laurent; Pavageau, Bertrand; Wantz, Guillaume; Aziz, Hany

2014-01-01

Polymeric bulk heterojunction (BHJ) organic solar cells represent one of the most promising technologies for renewable energy with a low fabrication cost. Control over BHJ morphology is one of the key factors in obtaining high-efficiency devices. This review focuses on formulation strategies for optimizing the BHJ morphology. We address how solvent choice and the introduction of processing additives affect the morphology. We also review a number of recent studies concerning prediction methods that utilize the Hansen solubility parameters to develop efficient solvent systems.

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope

Energy Technology Data Exchange (ETDEWEB)

Bäcke, Olof, E-mail: obacke@chalmers.se [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden); Lindqvist, Camilla; Diaz de Zerio Mendaza, Amaia [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg (Sweden); Gustafsson, Stefan [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden); Wang, Ergang; Andersson, Mats R.; Müller, Christian [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg (Sweden); Kristiansen, Per Magnus [Institute of Polymer Nanotechnology (INKA), FHNW University of Applied Science and Arts Northwestern Switzerland, 5210 Windisch (Switzerland); Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen (Switzerland); Olsson, Eva, E-mail: eva.olsson@chalmers.se [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden)

2017-05-15

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV–vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000 kGy. - Highlights: • Thermal stability of a polymer: fullerne blend is increased using electron irradiation. • Using in-situ transmission electron microscopy the nanostructure is studied. • Electron irradiation stops phase separation between the polymer and fullerene. • Electron irradiation quenches the formation and nucleation of fullerene crystals.

Fabrication and characterization of DBM/p-Si heterojunction solar cell

International Nuclear Information System (INIS)

El-Nahass, M.M.; Kamel, M.A.; Atta, A.A.; Huthaily, S.Y.

2013-01-01

Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor–acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density–voltage (J–V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance–voltage (C–V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: ► The molecular rotors DBM dye can be used to manufacture D/A solar cells. ► Since D/A are situated in the DBM molecule, we ensure photoinduced D → A electron transfer. ► The DBM film is grown as nano-rods. ► The most of the DBM bulk of the cell contributes to the generation of external current.

Fabrication and characterization of DBM/p-Si heterojunction solar cell

Energy Technology Data Exchange (ETDEWEB)

El-Nahass, M.M.; Kamel, M.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Atta, A.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Physics Department, Faculty of Science, Taif University, Taif, 888 Taif (Saudi Arabia); Huthaily, S.Y., E-mail: s_huthaily@yahoo.com [Physics Department, Faculty of Education, Hodeidah University, Alduraihimi, 3114 Hodeidah (Yemen)

2013-01-15

Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor-acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density-voltage (J-V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance-voltage (C-V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: Black-Right-Pointing-Pointer The molecular rotors DBM dye can be used to manufacture D/A solar cells. Black-Right-Pointing-Pointer Since D/A are situated in the DBM molecule, we ensure photoinduced D {yields} A electron transfer. Black-Right-Pointing-Pointer The DBM film is grown as nano-rods. Black-Right-Pointing-Pointer The most of the DBM bulk of the cell contributes to the generation of external current.

Analytical Model for Voltage-Dependent Photo and Dark Currents in Bulk Heterojunction Organic Solar Cells

Directory of Open Access Journals (Sweden)

Mesbahus Saleheen

2016-05-01

Full Text Available A physics-based explicit mathematical model for the external voltage-dependent forward dark current in bulk heterojunction (BHJ organic solar cells is developed by considering Shockley-Read-Hall (SRH recombination and solving the continuity equations for both electrons and holes. An analytical model for the external voltage-dependent photocurrent in BHJ organic solar cells is also proposed by incorporating exponential photon absorption, dissociation efficiency of bound electron-hole pairs (EHPs, carrier trapping, and carrier drift and diffusion in the photon absorption layer. Modified Braun’s model is used to compute the electric field-dependent dissociation efficiency of the bound EHPs. The overall net current is calculated considering the actual solar spectrum. The mathematical models are verified by comparing the model calculations with various published experimental results. We analyze the effects of the contact properties, blend compositions, charge carrier transport properties (carrier mobility and lifetime, and cell design on the current-voltage characteristics. The power conversion efficiency of BHJ organic solar cells mostly depends on electron transport properties of the acceptor layer. The results of this paper indicate that improvement of charge carrier transport (both mobility and lifetime and dissociation of bound EHPs in organic blend are critically important to increase the power conversion efficiency of the BHJ solar cells.

Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

KAUST Repository

Eita, Mohamed Samir

2015-02-04

The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

Laterally Ordered Bulk Heterojunction of Conjugated Polymers : Nanoskiving a Jelly Roll

NARCIS (Netherlands)

Lipomi, Darren J.; Chiechi, Ryan C.; Reus, William F.; Whitesides, George M.

2008-01-01

This paper describes the fabrication of a nanostructured heterojunction of two conjugated polymers by a three-step process: i) spin-coating a multilayered film of the two polymers, ii) rolling the film into a cylinder (a ‘‘jelly roll’’) and iii) sectioning the film perpendicular to the axis of the

Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

Directory of Open Access Journals (Sweden)

Chih-Hung Hsu

2014-01-01

Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

Insight into Evolution, Processing and Performance of Multi-length-scale Structures in Planar Heterojunction Perovskite Solar Cells.

Science.gov (United States)

Huang, Yu-Ching; Tsao, Cheng-Si; Cho, Yi-Ju; Chen, Kuan-Chen; Chiang, Kai-Ming; Hsiao, Sheng-Yi; Chen, Chang-Wen; Su, Chun-Jen; Jeng, U-Ser; Lin, Hao-Wu

2015-09-04

The structural characterization correlated to the processing control of hierarchical structure of planar heterojunction perovskite layer is still incomplete due to the limitations of conventional microscopy and X-ray diffraction. This present study performed the simultaneously grazing-incidence small-angle scattering and wide-angle scattering (GISAXS/GIWAXS) techniques to quantitatively probe the hierarchical structure of the planar heterojunction perovskite solar cells. The result is complementary to the currently microscopic study. Correlation between the crystallization behavior, crystal orientation, nano- and meso-scale internal structure and surface morphology of perovskite film as functions of various processing control parameters is reported for the first time. The structural transition from the fractal pore network to the surface fractal can be tuned by the chloride percentage. The GISAXS/GIWAXS measurement provides the comprehensive understanding of concurrent evolution of the film morphology and crystallization correlated to the high performance. The result can provide the insight into formation mechanism and rational synthesis design.

Insight into Evolution, Processing and Performance of Multi-length-scale Structures in Planar Heterojunction Perovskite Solar Cells

Science.gov (United States)

Huang, Yu-Ching; Tsao, Cheng-Si; Cho, Yi-Ju; Chen, Kuan-Chen; Chiang, Kai-Ming; Hsiao, Sheng-Yi; Chen, Chang-Wen; Su, Chun-Jen; Jeng, U.-Ser; Lin, Hao-Wu

2015-09-01

The structural characterization correlated to the processing control of hierarchical structure of planar heterojunction perovskite layer is still incomplete due to the limitations of conventional microscopy and X-ray diffraction. This present study performed the simultaneously grazing-incidence small-angle scattering and wide-angle scattering (GISAXS/GIWAXS) techniques to quantitatively probe the hierarchical structure of the planar heterojunction perovskite solar cells. The result is complementary to the currently microscopic study. Correlation between the crystallization behavior, crystal orientation, nano- and meso-scale internal structure and surface morphology of perovskite film as functions of various processing control parameters is reported for the first time. The structural transition from the fractal pore network to the surface fractal can be tuned by the chloride percentage. The GISAXS/GIWAXS measurement provides the comprehensive understanding of concurrent evolution of the film morphology and crystallization correlated to the high performance. The result can provide the insight into formation mechanism and rational synthesis design.

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

Science.gov (United States)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

Directory of Open Access Journals (Sweden)

Roca i Cabarrocas P.

2012-07-01

Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

CH 3 NH 3 PbI 3 /GeSe bilayer heterojunction solar cell with high performance

Science.gov (United States)

Hou, Guo-Jiao; Wang, Dong-Lin; Ali, Roshan; Zhou, Yu-Rong; Zhu, Zhen-Gang; Su, Gang

2018-01-01

Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a conversion efficiency even higher than the conventional perovskite solar cell. Such a scheme uses a property that the semiconductor layer with a direct band gap can be better in absorption of long wavelength light and is complementary to the perovskite layer. We studied the semiconducting layers such as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is the best, where the optical absorption efficiency in the perovskite/GeSe solar cell is dramatically increased. It turns out that the short circuit current density is enhanced 100% and the power conversion efficiency is promoted 42.7% (to a high value of 23.77%) larger than that in a solar cell with only single perovskite layer. The power conversion efficiency can be further promoted so long as the fill factor and open-circuit voltage are improved. This strategy opens a new way on developing the solar cells with high performance and practical applications.

Stimulated emission within the exciplex band by plasmonic-nanostructured polymeric heterojunctions

Science.gov (United States)

Zhang, Xinping; Li, Hongwei; Wang, Yimeng; Liu, Feifei

2015-03-01

Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix.Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient

Hybrid zinc oxide/graphene electrodes for depleted heterojunction colloidal quantum-dot solar cells.

Science.gov (United States)

Tavakoli, Mohammad Mahdi; Aashuri, Hossein; Simchi, Abdolreza; Fan, Zhiyong

2015-10-07

Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices. In this work, we have employed a facile and in situ solution-based process to prepare zinc oxide/graphene quantum dots (ZnO/G QDs) in a hybrid structure. The prepared hybrid dots are composed of a ZnO core, with an average size of 5 nm, warped with graphene nanosheets. Spectroscopic studies show that the graphene shell quenches the photoluminescence intensity of the ZnO nanocrystals by about 72%, primarily due to charge transfer reactions and static quenching. A red shift in the absorption peak is also observed. Raman spectroscopy determines G-band splitting of the graphene shell into two separated sub-bands (G(+), G(-)) caused by the strain induced symmetry breaking. It is shown that the hybrid ZnO/G QDs can be used as a counter-electrode for heterojunction colloidal quantum-dot solar cells for efficient charge-carrier collection, as evidenced by the external quantum efficiency measurement. Under the solar simulated spectrum (AM 1.5G), we report enhanced power conversion efficiency (35%) with higher short current circuit (80%) for lead sulfide-based solar cells as compared to devices prepared by pristine ZnO nanocrystals.

Copper oxide/N-silicon heterojunction photovoltaic device

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-01-01

A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Integration of Semiconducting Sulfides for Full-Spectrum Solar Energy Absorption and Efficient Charge Separation.

Science.gov (United States)

Zhuang, Tao-Tao; Liu, Yan; Li, Yi; Zhao, Yuan; Wu, Liang; Jiang, Jun; Yu, Shu-Hong

2016-05-23

The full harvest of solar energy by semiconductors requires a material that simultaneously absorbs across the whole solar spectrum and collects photogenerated electrons and holes separately. The stepwise integration of three semiconducting sulfides, namely ZnS, CdS, and Cu2-x S, into a single nanocrystal, led to a unique ternary multi-node sheath ZnS-CdS-Cu2-x S heteronanorod for full-spectrum solar energy absorption. Localized surface plasmon resonance (LSPR) in the nonstoichiometric copper sulfide nanostructures enables effective NIR absorption. More significantly, the construction of pn heterojunctions between Cu2-x S and CdS leads to staggered gaps, as confirmed by first-principles simulations. This band alignment causes effective electron-hole separation in the ternary system and hence enables efficient solar energy conversion. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-06-01

Full Text Available Aluminum oxide (AlOx and plasma immersion ion implantation (PIII were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlOx on the surface of a solar cell increased the short-circuit current density (Jsc; open-circuit voltage (Voc; and conversion efficiency from 27.84 mA/cm2; 0.52 V; and 8.97% to 29.34 mA/cm2; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the Jsc; Voc; and fill factor were 37.78 mA/cm2; 0.55 V; and 0.742; respectively.

The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

Science.gov (United States)

Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

2016-03-01

Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

International Nuclear Information System (INIS)

Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

2015-01-01

We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

International Nuclear Information System (INIS)

Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

2017-01-01

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

Science.gov (United States)

Jin, Fangming; Su, Zisheng; Chu, Bei; Cheng, Pengfei; Wang, Junbo; Zhao, Haifeng; Gao, Yuan; Yan, Xingwu; Li, Wenlian

2016-05-01

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm2, an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm2. Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

Energy Technology Data Exchange (ETDEWEB)

Kuang, Ping; Lin, Shawn-Yu, E-mail: sylin@rpi.edu [The Future Chips Constellation and the Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Hsieh, Mei-Li [Department of Photonics, National Chia-Tung University, Hsinchu, Taiwan (China)

2015-06-07

In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter state wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.

Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

Science.gov (United States)

Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

2015-11-25

Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications.

Difluorobenzothiadiazole based two-dimensional conjugated polymers with triphenylamine substituted moieties as pendants for bulk heterojunction solar cells

Directory of Open Access Journals (Sweden)

W. H. Lee

2017-11-01

Full Text Available Three donor/acceptor (D/A-type two-dimensional polythiophenes (PTs; PBTFA13, PBTFA12, PBTFA11 featuring difluorobenzothiadiazole (DFBT derivatives as the conjugated (acceptor units in the polymer backbone and tertbutyl–substituted triphenylamine (tTPA-containing moieties as (donor pendants have been synthesized and characterized. These PTs exhibited good thermal stabilities, broad absorption spectra, and narrow optical band gaps. The cutoff wavelength of the UV–Vis absorption band was red-shifted upon increasing the content of the DFBT units in the PTs. Bulk heterojunction solar cells having an active layer comprising blends of the PTs and fullerene derivatives [6,6] phenyl-C61/71-butyric acid methyl ester (PC61BM/PC71BM were fabricated; their photovoltaic performance was strongly dependent on the content of the DFBT derivative in the PT. Incorporating a suitable content of the DFBT derivative in the polymer backbone enhanced the solar absorption ability and conjugation length of the PTs. The photovoltaic properties of the PBTFA13-based solar cells were superior to those of the PBTFA11- and PBTFA12-based solar cells.

Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

International Nuclear Information System (INIS)

Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

2014-01-01

Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

Science.gov (United States)

Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

2017-08-09

We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

Highly efficient perovskite solar cells based on a nanostructured WO3-TiO2 core-shell electron transporting material

KAUST Repository

Mahmood, Khalid; Swain, Bhabani Sankar; Kirmani, Ahmad R.; Amassian, Aram

2015-01-01

Until recently, only mesoporous TiO2 and ZnO were successfully demonstrated as electron transport layers (ETL) alongside the reports of ZrO2 and Al2O3 as scaffold materials in organometal halide perovskite solar cells, largely owing to ease of processing and to high power conversion efficiency. In this article, we explore tungsten trioxide (WO3)-based nanostructured and porous ETL materials directly grown hydrothermally with different morphologies such as nanoparticles, nanorods and nanosheet arrays. The nanostructure morphology strongly influences the photocurrent and efficiency in organometal halide perovskite solar cells. We find that the perovskite solar cells based on WO3 nanosheet arrays yield significantly enhanced photovoltaic performance as compared to nanoparticles and nanorod arrays due to good perovskite absorber infiltration in the porous scaffold and more rapid carrier transport. We further demonstrate that treating the WO3 nanostructures with an aqueous solution of TiCl4 reduces charge recombination at the perovskite/WO3 interface, resulting in the highest power conversion efficiency of 11.24% for devices based on WO3 nanosheet arrays. The successful demonstration of alternative ETL materials and nanostructures based on WO3 will open up new opportunities in the development of highly efficient perovskite solar cells. This journal is © The Royal Society of Chemistry 2015.

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

Science.gov (United States)

Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I.-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

2013-11-01

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

"Plastic" solar cells: self-assembly of bulk heterojunction nanomaterials by spontaneous phase separation.

Science.gov (United States)

Peet, Jeffrey; Heeger, Alan J; Bazan, Guillermo C

2009-11-17

As the global demand for low-cost renewable energy sources intensifies, interest in new routes for converting solar energy to electricity is rapidly increasing. Although photovoltaic cells have been commercially available for more than 50 years, only 0.1% of the total electricity generated in the United States comes directly from sunlight. The earliest commercial solar technology remains the basis for the most prevalent devices in current use, namely, highly-ordered crystalline, inorganic solar cells, commonly referred to as silicon cells. Another class of solar cells that has recently inspired significant academic and industrial excitement is the bulk heterojunction (BHJ) "plastic" solar cell. Research by a rapidly growing community of scientists across the globe is generating a steady stream of new insights into the fundamental physics, the materials design and synthesis, the film processing and morphology, and the device science and architecture of BHJ technology. Future progress in the fabrication of high-performance BHJ cells will depend on our ability to combine aspects of synthetic and physical chemistry, condensed matter physics, and materials science. In this Account, we use a combination of characterization tools to tie together recent advances in BHJ morphology characterization, device photophysics, and thin-film solution processing, illustrating how to identify the limiting factors in solar cell performance. We also highlight how new processing methods, which control both the BHJ phase separation and the internal order of the components, can be implemented to increase the power conversion efficiency (PCE). The failure of many innovative materials to achieve high performance in BHJ solar cell devices has been blamed on "poor morphology" without significant characterization of either the structure of the phase-separated morphology or the nature of the charge carrier recombination. We demonstrate how properly controlling the "nanomorphology", which is

pH-regulated antimony oxychloride nanoparticle formation on titanium oxide nanostructures: a photocatalytically active heterojunction

KAUST Repository

Buchholcz, Balázs

2017-02-06

Improving the catalytic activity of heterogeneous photocatalysts has become a hot topic recently. To this end, considerable progress has been made in the efficient separation of photogenerated charge carriers by e.g. the realization of heterojunction photocatalysts. V-VI-VII compound semiconductors, namely, bismuth oxyhalides, are popular photocatalysts. However, results on antimony oxyhalides [SbOX (X = Br, Cl, I)], the very promising alternatives to the well-known BiOX photomodifiers, are scarce. Here, we report the successful decoration of titanium oxide nanostructures with 8-11 nm diameter SbOX nanoparticles for the first time ever. The product size and stoichiometry could be controlled by the pH of the reactant mixture, while subsequent calcination could transform the structure of the titanate nanotube (TiONT) support and the prepared antimony oxychloride particles. In contrast to the ease of composite formation in the SbOX/TiONT case, anatase TiO could not facilitate the formation of antimony oxychloride nanoparticles on its surface. The titanate nanotube-based composites showed activity in a generally accepted quasi-standard photocatalytic test reaction (methyl orange dye decolorization). We found that the SbOCl/TiONT synthesized at pH = 1 is the most active sample in a broad temperature range.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

Science.gov (United States)

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Fabrication of Bulk Heterojunction P3HT: PCBM Organic Photovoltaics

Science.gov (United States)

Darwis, D.; Sesa, E.; Farhamza, D.; Iqbal

2018-05-01

Bulk heterojunction Organic photovoltaic (OPV) devices are gaining a lot of interest due to their potential for ease of processing and lower manufacturing cost sustainable energy generation. In consequence, the number of studies into the properties and characteristics of organic solar cell devices has been increased to improving their power conversion. A further advancement over past decade has shown that improved efficiency could be obtained by mixed of poly(3 - hexylthiophene) (P3HT) and [1] – phenyl - C61-butyric acid methyl ester (PCBM) as an active layer. A series of optimizations of this P3HT: PCBM blends, such as the mixture ratio variation, the annealing treatments, and solvent treatment, have been emerged to improve the efficiency of the OPV. As a result, significant improvements were achieved. Here, we report the fabrication heterojunction devices of 2.9 % efficiency. This result has been achieved using the configuration of a typical heterojunction solar cell modules consists of layered glass/ITO/PEDOT: PSS/active layer/cathode interlayer

Correlation between the fine structure of spin-coated PEDOT:PSS and the photovoltaic performance of organic/crystalline-silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Funda, Shuji; Ohki, Tatsuya; Liu, Qiming; Hossain, Jaker; Ishimaru, Yoshihiro; Ueno, Keiji; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan)

2016-07-21

We investigated the relationship between the fine structure of spin-coated conductive polymer poly(3,4-ethylenedioxythiphene):poly(styrene sulfonate) (PEDOT:PSS) films and the photovoltaic performance of PEDOT:PSS crystalline-Si (PEDOT:PSS/c-Si) heterojunction solar cells. Real-time spectroscopic ellipsometry revealed that there were two different time constants for the formation of the PEDOT:PSS network. Upon removal of the polar solvent, the PEDOT:PSS film became optically anisotropic, indicating a conformational change in the PEDOT and PSS chain. Polarized Fourier transform infrared attenuated total reflection absorption spectroscopy and Raman spectroscopy measurements also indicated that thermal annealing promoted an in-plane π-conjugated C{sub α} = C{sub β} configuration attributed to a thiophene ring in PEDOT and an out-of-plane configuration of -SO{sub 3} groups in the PSS chain with increasing composition ratio of oxidized (benzoid) to neutral (quinoid) PEDOT, I{sub qui}/I{sub ben}. The highest power conversion efficiency for the spin-coated PEDOT:PSS/c-Si heterojunction solar cells was 13.3% for I{sub qui}/I{sub ben} = 9–10 without employing any light harvesting methods.

Polymer:Nonfullerene Bulk Heterojunction Solar Cells with Exceptionally Low Recombination Rates

KAUST Repository

Gasparini, Nicola; Salvador, Michael; Heumueller, Thomas; Richter, Moses; Classen, Andrej; Shrestha, Shreetu; Matt, Gebhard J.; Holliday, Sarah; Strohm, Sebastian; Egelhaaf, Hans-Joachim; Wadsworth, Andrew; Baran, Derya; McCulloch, Iain; Brabec, Christoph J.

2017-01-01

Organic semiconductors are in general known to have an inherently lower charge carrier mobility compared to their inorganic counterparts. Bimolecular recombination of holes and electrons is an important loss mechanism and can often be described by the Langevin recombination model. Here, the device physics of bulk heterojunction solar cells based on a nonfullerene acceptor (IDTBR) in combination with poly(3-hexylthiophene) (P3HT) are elucidated, showing an unprecedentedly low bimolecular recombination rate. The high fill factor observed (above 65%) is attributed to non-Langevin behavior with a Langevin prefactor (β/βL) of 1.9 × 10−4. The absence of parasitic recombination and high charge carrier lifetimes in P3HT:IDTBR solar cells inform an almost ideal bimolecular recombination behavior. This exceptional recombination behavior is explored to fabricate devices with layer thicknesses up to 450 nm without significant performance losses. The determination of the photoexcited carrier mobility by time-of-flight measurements reveals a long-lived and nonthermalized carrier transport as the origin for the exceptional transport physics. The crystalline microstructure arrangement of both components is suggested to be decisive for this slow recombination dynamics. Further, the thickness-independent power conversion efficiency is of utmost technological relevance for upscaling production and reiterates the importance of understanding material design in the context of low bimolecular recombination.

Polymer:Nonfullerene Bulk Heterojunction Solar Cells with Exceptionally Low Recombination Rates

KAUST Repository

Gasparini, Nicola

2017-09-01

Organic semiconductors are in general known to have an inherently lower charge carrier mobility compared to their inorganic counterparts. Bimolecular recombination of holes and electrons is an important loss mechanism and can often be described by the Langevin recombination model. Here, the device physics of bulk heterojunction solar cells based on a nonfullerene acceptor (IDTBR) in combination with poly(3-hexylthiophene) (P3HT) are elucidated, showing an unprecedentedly low bimolecular recombination rate. The high fill factor observed (above 65%) is attributed to non-Langevin behavior with a Langevin prefactor (β/βL) of 1.9 × 10−4. The absence of parasitic recombination and high charge carrier lifetimes in P3HT:IDTBR solar cells inform an almost ideal bimolecular recombination behavior. This exceptional recombination behavior is explored to fabricate devices with layer thicknesses up to 450 nm without significant performance losses. The determination of the photoexcited carrier mobility by time-of-flight measurements reveals a long-lived and nonthermalized carrier transport as the origin for the exceptional transport physics. The crystalline microstructure arrangement of both components is suggested to be decisive for this slow recombination dynamics. Further, the thickness-independent power conversion efficiency is of utmost technological relevance for upscaling production and reiterates the importance of understanding material design in the context of low bimolecular recombination.

Light-trapping in solar cells by photonic nanostructures. The need for benchmarking and fabrication assessments

Energy Technology Data Exchange (ETDEWEB)

Lenzmann, F.O.; Salpakari, J.; Weeber, A.W.; Olson, C.L. [ECN Solar Energy, Petten (Netherlands)

2013-07-15

Light-trapping in solar cells by photonic nanostructures, e.g., nano-textured surfaces or metallic and nonmetallic nanoparticles is a research area of great promise. A large multitude of configurations is being explored and there is a rising need for (a set of) assessment elements that help to narrow in on the most viable ones. This paper discusses two examples: benchmark devices and the assessment of fabrication aspects for the nanostructures.

PbS/Cd3P2 quantum heterojunction colloidal quantum dot solar cells

International Nuclear Information System (INIS)

Cao, Hefeng; Xu, Songman; Liu, Huan; Liu, Zeke; Zhu, Xiangxiang; Peng, Jun; Ma, Wanli; Hu, Long; Luo, Miao; Tang, Jiang

2015-01-01

Here, we demonstrated the quantum heterojunction colloidal quantum dot (CQD) solar cells employing the PbS CQDs/Cd 3 P 2 CQDs architecture in which both the p-type PbS and n-type Cd 3 P 2 CQD layers are quantum-tunable and solution-processed light absorbers. We synthesized well-crystallized and nearly monodispersed tetragonal Cd 3 P 2 CQDs and then engineered their energy band alignment with the p-type PbS by tuning the dot size and hence the bandgap to achieve efficient light absorbing and charge separation. We further optimized the device through the Ag-doping strategy of PbS CQDs that may leverage an expanded depletion region in the n-layer, which greatly enhances the photocurrent. The resulting devices showed an efficiency of 1.5%. (paper)

Solution processable organic polymers and small molecules for bulk-heterojunction solar cells: A review

International Nuclear Information System (INIS)

Sharma, G. D.

2011-01-01

Solution processed bulk heterojunction (BHJ) organic solar cells (OSCs) have gained wide interest in past few years and are established as one of the leading next generation photovoltaic technologies for low cost power production. Power conversion efficiencies up to 6% and 6.5% have been reported in the literature for single layer and tandem solar cells, respectively using conjugated polymers. A recent record efficiency about 8.13% with active area of 1.13 cm 2 has been reported. However Solution processable small molecules have been widely applied for photovoltaic (PV) devices in recent years because they show strong absorption properties, and they can be easily purified and deposited onto flexible substrates at low cost. Introducing different donor and acceptor groups to construct donor--acceptor (D--A) structure small molecules has proved to be an efficient way to improve the properties of organic solar cells (OSCs). The power conversion efficiency about 4.4 % has been reported for OSCs based on the small molecules. This review deals with the recent progress of solution processable D--A structure small molecules and discusses the key factors affecting the properties of OSCs based on D--A structure small molecules: sunlight absorption, charge transport and the energy level of the molecules.

Plasmonic Nanostructure for Enhanced Light Absorption in Ultrathin Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jinna He

2012-01-01

Full Text Available The performances of thin film solar cells are considerably limited by the low light absorption. Plasmonic nanostructures have been introduced in the thin film solar cells as a possible solution around this issue in recent years. Here, we propose a solar cell design, in which an ultrathin Si film covered by a periodic array of Ag strips is placed on a metallic nanograting substrate. The simulation results demonstrate that the designed structure gives rise to 170% light absorption enhancement over the full solar spectrum with respect to the bared Si thin film. The excited multiple resonant modes, including optical waveguide modes within the Si layer, localized surface plasmon resonance (LSPR of Ag stripes, and surface plasmon polaritons (SPP arising from the bottom grating, and the coupling effect between LSPR and SPP modes through an optimization of the array periods are considered to contribute to the significant absorption enhancement. This plasmonic solar cell design paves a promising way to increase light absorption for thin film solar cell applications.

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Bulk Heterojunction Solar Cells Based on Blends of Conjugated Polymers with II–VI and IV–VI Inorganic Semiconductor Quantum Dots

Directory of Open Access Journals (Sweden)

Ryan Kisslinger

2017-01-01

Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Science.gov (United States)

Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2015-05-13

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Design and optimization of Ag-dielectric core-shell nanostructures for silicon solar cells

Directory of Open Access Journals (Sweden)

Feng-Xiang Chen

2015-09-01

Full Text Available Metal-dielectric core-shell nanostructures have been proposed as a light trapping scheme for enhancing the optical absorption of silicon solar cells. As a potential application of such enhanced effects, the scattering efficiencies of three core-shell structures (Ag@SiO2, Ag@TiO2, and Ag@ZrO2 are discussed using the Mie Scattering theory. For compatibility with experiment results, the core diameter and shell thickness are limited to 100 and 30 nm, respectively, and a weighted scattering efficiency is introduced to evaluate the scattering abilities of different nanoparticles under the solar spectrum AM 1.5. The simulated results indicate that the shell material and thickness are two key parameters affecting the weighted scattering efficiency. The SiO2 is found to be an unsuitable shell medium because of its low refractive index. However, using the high refractive index mediumTiO2 in Ag@TiO2 nanoparticles, only the thicker shell (30 nm is more beneficial for light scattering. The ZrO2 is an intermediate refractive index material, so Ag@ZrO2 nanoparticles are the most effective core-shell nanostructures in these silicon solar cells applications.

Squaraine Planar-Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Bin Fan

2009-01-01

derivatives with extraordinarily high extinction coefficients are used as electron donors in bilayer heterojunctions with fullerene C60 as electron acceptor. Due to the very strong squaraine absorption band in the red spectral domain, antibatic behavior due to light filtering is observed in the photocurrent spectrum for film thicknesses of 35 nm to 40 nm. At reduced film thicknesses of 20 nm, this filtering effect at maximum absorption can be alleviated and power conversion efficiencies under simulated AM 1.5 full sun irradiation of 0.59% and 1.01% are obtained for the two squaraine derivatives, respectively. The photovoltaic properties of these cells are investigated with respect to electrode materials and chemical doping.

Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

Science.gov (United States)

Shu, Zhan

With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVSi surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and

Nanostructures for Enhanced Light Absorption in Solar Energy Devices

Directory of Open Access Journals (Sweden)

Gustav Edman Jonsson

2011-01-01

Full Text Available The fascinating optical properties of nanostructured materials find important applications in a number of solar energy utilization schemes and devices. Nanotechnology provides methods for fabrication and use of structures and systems with size corresponding to the wavelength of visible light. This opens a wealth of possibilities to explore the new, often of resonance character, phenomena observed when the object size and the electromagnetic field periodicity (light wavelength λ match. Here we briefly review the effects and concepts of enhanced light absorption in nanostructures and illustrate them with specific examples from recent literature and from our studies. These include enhanced optical absorption of composite photocatalytically active TiO2/graphitic carbon films, systems with enhanced surface plasmon resonance, field-enhanced absorption in nanofabricated carbon structures with geometrical optical resonances and excitation of waveguiding modes in supported nanoparticle assembles. The case of Ag particles plasmon-mediated chemistry of NO on graphite surface is highlighted to illustrate the principle of plasmon-electron coupling in adsorbate systems.

Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment(Conference Presentation)

Science.gov (United States)

Sharma, Dipika; Satsangi, Vibha R.; Dass Kaura, Sahab; Shrivastav, Rohit; Waghmare, Umesh V.

2016-10-01

Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment Dipika Sharmaa, Vibha R. Satsangib, Rohit Shrivastava, Umesh V. Waghmarec, Sahab Dassa aDepartment of Chemistry, Dayalbagh Educational Institute, Agra-282 110 (India) bDepartment of Physics and Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 (India) cTheoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560 064 (India) * Phone: +91-9219695960. Fax: +91-562-2801226. E-mail: drsahabdas@gmail.com. Study on photoelectrochemical activity of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction has been carried out using DFT based band offsets and charge carriers effective mass calculations and their experimental verification. The results of DFT calculations show that BaTiO3 and Cu2O have staggered type band alignment after the heterojunction formation and high mobility of electrons in Cu2O as compared to the electrons in BaTiO3. Staggered type band edges alignment and high mobility of electrons and holes improved the separation of photo-generated charge carriers in BaTiO3/Cu2O heterojunction. To validate the theoretical results experiments were carried out on pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction with varying thickness of Cu2O. All samples were characterized by X- Ray Diffractometer, SEM and UV-Vis spectrometry. Nanostructured thin films of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 1.44 mA/cm2 at 0.90 V/SCE was exhibited by 442 nm thick BaTiO3/Cu2O heterojunction photoelectrode Increased photocurrent density and enhanced photoconversion efficiency, exhibited by the heterojunction may be attributed to improved conductivity and enhanced separation of the photogenerated carriers at the BaTiO3/Cu2O interface. The experimental results and first

Low-temperature processed ultrathin TiO2 for efficient planar heterojunction perovskite solar cells

International Nuclear Information System (INIS)

Huang, Xiaokun; Hu, Ziyang; Xu, Jie; Wang, Peng; Zhang, Jing; Zhu, Yuejin

2017-01-01

Highlights: • An ultrathin and discrete TiO 2 (u-TiO 2 ) was fabricated at low temperature. • High-performance perovskite solar cells based u-TiO 2 was realized. • u-TiO 2 between perovskite and FTO functions as a bridge for electron transport. • u-TiO 2 accelerates electron transfer and alleviates charge recombination. - Abstract: A compact TiO 2 (c-TiO 2 ) layer fabricated by spin coating or spray pyrolysis following a high-temperature sintering is a routine in high-performance planar heterojunction perovskite solar cells. Here, we demonstrate an effective low-temperature approach to fabricate an ultrathin and discrete TiO 2 (u-TiO 2 ) for enhancing photovoltaic performance of perovskite solar cells. Via hydrolysis of low-concentration TiCl 4 solution at 70 °C, u-TiO 2 was grown on a fluorine doped tin oxide (FTO) substrate, forming the electron selective contact with the photoactive CH 3 NH 3 PbI 3 film. The perovskite solar cell using u-TiO 2 achieves an efficiency of 13.42%, which is compared to 13.56% of the device using c-TiO 2 prepared by high-temperature sintering. Cyclic voltammetry, steady-state photoluminescence spectroscopy and electrical impedance spectroscopy were conducted to study interface engineering and charge carrier dynamics. Our results suggest that u-TiO 2 functions as a bridge for electron transport between perovskite and FTO, which accelerates electron transfer and alleviates charge recombination.

Metal Nanoparticles and Carbon-Based Nanostructures as Advanced Materials for Cathode Application in Dye-Sensitized Solar Cells

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Pietro Calandra

2010-01-01

Full Text Available We review the most advanced methods for the fabrication of cathodes for dye-sensitized solar cells employing nanostructured materials. The attention is focused on metal nanoparticles and nanostructured carbon, among which nanotubes and graphene, whose good catalytic properties make them ideal for the development of counter electrode substrates, transparent conducting oxide, and advanced catalyst materials.

Solid-state synthesis of ZnO and ZnFe{sub 2}O{sub 4} to form p–n junction composite in the use of dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Hu, Jing; Xie, Yahong, E-mail: xyh0707@163.com; Zhou, Xiaofeng; Yang, Jianya

2016-08-15

In this study, ZnO and ZnFe{sub 2}O{sub 4} nanostructures are rapidly synthesized at relatively low temperature and without any organic surfactants using an economical, simple, and environmentally friendly solid-state synthesis. Results shows that the formation of p–n heterojunction electric field at the interface between ZnFe{sub 2}O{sub 4} and ZnO is significantly effective in improving the open-circuit voltage (V{sub oc}) by efficiently promoting the separation efficiency of photogenerated electron–hole pairs on the surface of semiconductor, and an enhanced light-to-electric energy conversion efficiency of the dye-sensitized solar cell (DSSC) reaches 7.28%, which improve by 54.9% compared with that of pure ZnO based DSSCs (4.70%). - Highlights: • A ZnO–ZnFe{sub 2}O{sub 4} nanostructure was fabricated by a low-temperature solid-state method. • A p–n heterojunction electric field was successfully formed at the interface between ZnFe{sub 2}O{sub 4} and ZnO. • The p–n heterojunction could effectively promote the separation efficiency of photogenerated electron–hole pairs. • The power conversion efficiency of the DSSCs improved by 54.9% compared with that of pure ZnO based DSSCs (4.70%).

Two dimensional self-assembly zinc porphyrin and zinc phthalocyanine heterojunctions with record high power conversion efficiencies

Science.gov (United States)

Yu, Junting; Jiang, Zhou; Hao, Yifan; Zhu, Qianhong; Zhao, Mingliang; Jiang, Xue; Zhao, Jijun

2018-06-01

Compared to inorganic solar cells, the power conversion efficiencies (PCEs) of organic solar cells are much lower, but they are compensated by many merits such as lower cost, less weight, and tunable structures, making them prospective for further applications. Porphyrin and phthalocyanine are the two most significant materials for organic solar cells due to their strong light-absorbing properties and semiconductor characteristics. However, there is little research on the 2D heterojunction solar cells based on these two materials, meanwhile the PCEs of them are still low. Here we have self-assembled several 2D zinc porphyrins (ZnPors) and performed first-principles simulation to demonstrate their good stability, suitable light harvesting, and high charge carrier mobility. By perfectly matching lattice constants and molecular energy levels between those 2D ZnPors and our previous proposed zinc phthalocyanines (ZnPcs), 11 type-II organic heterojunctions are constructed to further improve their charge separation capability. Those advantages endow 2D ZnPors and ZnPcs appreciable PCEs for solar cells. Among them, the theoretical PCE of 2D ZnPors/ZnPcs heterojunctions achieves as high as 19.84%, which exceeds all reported organic solar cells, and even approaches the PCEs of inorganic solar cells. These results indicate that our 2D ZnPors and 2D ZnPcs are good candidate materials for future organic solar cells.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

Science.gov (United States)

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

The effect of solvent on the morphology of an inkjet printed active layer of bulk heterojunction solar cells

International Nuclear Information System (INIS)

Fauzia, Vivi; Umar, Akrajas Ali; Salleh, Muhamad Mat; Yahaya, Muhammad

2011-01-01

Bulk heterojunction organic solar cells were fabricated by sandwiching the active layer between indium tin oxide (ITO) and Al electrodes. The active layer used was a blend of poly(3-octylthiophene-2,5-diyl) (P3OT) as the electron donor and (6,6)-phenyl C 71 butyric acid methyl ester (PC 71 BM) as the electron acceptor. The active layer thin films were deposited by an inkjet printing technique. Prior to deposition of the thin films, the active materials were blended in three different solvents. The printed films were annealed at three different temperatures. It was found that the selection of the appropriate solvent and annealing treatment significantly influences the printing process, the morphology of the printed film and subsequently the performance of the solar cell devices

Facile Hydrothermal Synthesis of Tellurium Nanostructures for Solar Cells

Directory of Open Access Journals (Sweden)

M. Panahi-Kalamuei

2014-10-01

Full Text Available Tellurium (Te nanostructures have been successfully synthesized via a simple hydrothermal methodfrom the reaction of a TeCl4 aqueous solution with thioglycolic acid (TGA as a reductant. TGA can be easily oxidized to the corresponding disulfide [SCH2CO2H]2, which in turn can reduce TeCl4 to Te. The obtained Te was characterized by XRD, SEM, EDS, and DRS. The effect of reducing agent on morphology and size of the products were also studied. Additionally, Te thin film was deposited on the FTO-TiO2 by Dr- blading then employed to solar cell application and measured open circuit voltage (Voc, short circuit current (Isc, and fill factor (FF were determined as well. The studies showed that particle morphology and sizes play crucial role on solar cell efficiencies.

Effect of annealing on bulk heterojunction organic solar cells based on copper phthalocyanine and perylene derivative

KAUST Repository

Kim, Inho

2012-02-01

We investigated the effects of annealing on device performances of bulk heterojunction organic solar cells based on copper phthalocyanine (CuPc) and N,N′-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C6). Blended films of CuPc and PTCDI-C6 with annealing at elevated temperature were characterized by measuring optical absorption, photoluminescence, and X-ray diffraction. Enhanced molecular ordering and increments in domain sizes of donor and acceptor for the blended films were observed, and their influences on device performances were discussed. Annealing led to substantial improvements in photocurrent owing to enhanced molecular ordering and formation of percolation pathways. © 2011 Elsevier B.V. All rights reserved.

Zinc-oxide-based nanostructured materials for heterostructure solar cells

International Nuclear Information System (INIS)

Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A.; Somov, P. A.; Terukov, E. I.

2015-01-01

Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics

Double-layered ZnO nanostructures for efficient perovskite solar cells

KAUST Repository

Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

2014-01-01

To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Science.gov (United States)

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Directory of Open Access Journals (Sweden)

Tetsuro Hori

2010-11-01

Full Text Available Organic thin-film solar cells with a conducting polymer (CP/fullerene (C60 interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/ poly(3-hexylthiophene (PAT6/Au have been improved by the insertion of molybdenum trioxide (VI (MoO3 and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers.

Photosynthetic solar cell using nanostructured proton exchange membrane for microbial biofilm prevention.

Science.gov (United States)

Lee, Dong Hyun; Oh, Hwa Jin; Bai, Seoung Jae; Song, Young Seok

2014-06-24

Unwanted biofilm formation has a detrimental effect on bioelectrical energy harvesting in microbial cells. This issue still needs to be solved for higher power and longer durability and could be resolved with the help of nanoengineering in designing and manufacturing. Here, we demonstrate a photosynthetic solar cell (PSC) that contains a nanostructure to prevent the formation of biofilm by micro-organisms. Nanostructures were fabricated using nanoimprint lithography, where a film heater array system was introduced to precisely control the local wall temperature. To understand the heat and mass transfer phenomena behind the manufacturing and energy harvesting processes of PSC, we carried out a numerical simulation and experimental measurements. It revealed that the nanostructures developed on the proton exchange membrane enable PSC to produce enhanced output power due to the retarded microbial attachment on the Nafion membrane. We anticipate that this strategy can provide a pathway where PSC can ensure more renewable, sustainable, and efficient energy harvesting performance.

Bulk-Heterojunction Organic Solar Cells: Five Core Technologies for Their Commercialization.

Science.gov (United States)

Kang, Hongkyu; Kim, Geunjin; Kim, Junghwan; Kwon, Sooncheol; Kim, Heejoo; Lee, Kwanghee

2016-09-01

The past two decades of vigorous interdisciplinary approaches has seen tremendous breakthroughs in both scientific and technological developments of bulk-heterojunction organic solar cells (OSCs) based on nanocomposites of π-conjugated organic semiconductors. Because of their unique functionalities, the OSC field is expected to enable innovative photovoltaic applications that can be difficult to achieve using traditional inorganic solar cells: OSCs are printable, portable, wearable, disposable, biocompatible, and attachable to curved surfaces. The ultimate objective of this field is to develop cost-effective, stable, and high-performance photovoltaic modules fabricated on large-area flexible plastic substrates via high-volume/throughput roll-to-roll printing processing and thus achieve the practical implementation of OSCs. Recently, intensive research efforts into the development of organic materials, processing techniques, interface engineering, and device architectures have led to a remarkable improvement in power conversion efficiencies, exceeding 11%, which has finally brought OSCs close to commercialization. Current research interests are expanding from academic to industrial viewpoints to improve device stability and compatibility with large-scale printing processes, which must be addressed to realize viable applications. Here, both academic and industrial issues are reviewed by highlighting historically monumental research results and recent state-of-the-art progress in OSCs. Moreover, perspectives on five core technologies that affect the realization of the practical use of OSCs are presented, including device efficiency, device stability, flexible and transparent electrodes, module designs, and printing techniques. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge transport and recombination in bulk heterojunction solar cells studied by the photoinduced charge extraction in linearly increasing voltage technique

OpenAIRE

Mozer, AJ; Sariciftci, NS; Osterbacka, R; Westerling, M; Juska, G; LUTSEN, Laurence; VANDERZANDE, Dirk

2005-01-01

Charge carrier mobility and recombination in a bulk heterojunction solar cell based on the mixture of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-phenylene vinylene] (MDMO-PPV) and 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)-C-61 (PCBM) has been studied using the novel technique of photoinduced charge carrier extraction in a linearly increasing voltage (Photo-CELIV). In this technique, charge carriers are photogenerated by a short laser flash, and extracted under a reverse bias voltage ramp after ...

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

Energy Technology Data Exchange (ETDEWEB)

Guan-Hung Shen [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2014-11-03

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10{sup −4} A at − 20 V bias, a forward current of 7.2 × 10{sup −3} A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated.

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

International Nuclear Information System (INIS)

Guan-Hung Shen; Hong, Franklin Chau-Nan

2014-01-01

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10 −4 A at − 20 V bias, a forward current of 7.2 × 10 −3 A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated

Effects of Different Solvents on the Planar Hetero-junction Perovskite Solar Cells

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Lin Shunquan

2015-01-01

Full Text Available The perovskite (CH3NH3PbI3 films on the planar hetero-junction perovskite solar cells (PHJ-PSCs are fabricated by “two-steps” process with the wet spin-coating method. The precursor (PbI2 solutions are compounded with 4 types of solvents: N-Methyl Pyrrolidone (NMP, γ-butyrolactone (GBL, Dimethyl Sulfoxide (DMSO and N, N-dimethylformamide (DMF. All the solutions have the same concentration. The influences of different precursor solvents to the micro-structures of CH3NH3PbI3 films and device performance are studied. Atomic force microscopy (AFM and scanning electron microscope (SEM are used to characterize the CH3NH3PbI3 films. The results indicate that the CH3NH3PbI3 film using DMF solvent possesses more rough morphology and thickest thickness. The monolithic PHJ-PSCs devices based on DMF solvent are tested under a standard one sun of simulated solar irradiation (AM1.5. The results show that the open-circuit voltage (Voc reaches 872mV, the short-circuit current (Jsc reaches 9.35mA/cm2, the filling factor(FF is 0.62 and the photo-current conversion efficiency (PCE is 5.05%. DMF is the best one among these 4 types of solvents for PHJ-PSCs.

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

Directory of Open Access Journals (Sweden)

Carla Aramo

2015-03-01

Full Text Available A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Improved electron density through hetero-junction binary sensitized TiO2/ CdTe / D719 system as photoanode for dye sensitized solar cell

Science.gov (United States)

Pandey, A. K.; Ahmad, Muhammad Shakeel; Alizadeh, Mahdi; Rahim, Nasrudin Abd

2018-07-01

The combined effect of dual sensitization and hetero-junction symmetry has been investigated on the performance of TiO2 based dye sensitized solar cell. CdTe nanoparticles have been introduced in TiO2 matrix to function as sensitizer as well as act as hetero-junction between D719 dye and TiO2 nanoarchitecture. Four concentrations of CdTe i.e. 0.5 wt%, 2 wt%, 5 wt% and 8 wt% have been investigated. Morphological and compositional studies have been conducted using scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Light absorption characteristics have been investigated by employing Uv-vis spectroscopy and the overall performance has been studied using solar simulator and electrochemical impedance spectroscopy (EIS). Performance has been found to be increased with the addition of CdTe due to high electron density and reduction in recombination reactions. An increase of 41.73% in incident photo conversion efficiency (IPCE) and 75.57% in short circuit current density (Jsc) have been recorded for the specimens containing 5 wt% CdTe compared to bare TiO2 based DSSCs. Further addition of CdTe leads to reduction in overall performance of DSSCs.

Solar-hydrogen generation and solar concentration (Conference Presentation)

NARCIS (Netherlands)

Sulima, Oleg V.; Chinello, Enrico; Conibeer, Gavin; Modestino, Miquel A.; Schüttauf, Jan-Willem; Lambelet, David; Delfino, Antonio; Domine, Didier; Faes, Antonin; Despeisse, Matthieu; Bailat, Julien; Psaltis, Demetri; Fernandez Rivas, David; Ballif, Christophe; Moser, Christophe

2016-01-01

We successfully demonstrated and reported the highest solar-to-hydrogen efficiency with crystalline silicon cells and Earth-abundant electrocatalysts under unconcentrated solar radiation. The combination of hetero-junction silicon cells and a 3D printed Platinum/Iridium-Oxide electrolyzer has been

Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

Science.gov (United States)

Zhong, Sihua; Wang, Wenjie; Tan, Miao; Zhuang, Yufeng; Shen, Wenzhong

2017-11-01

Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures-textured solar cells. Furthermore, SiNPs-textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi-omnidirectional characteristic. As an overall result, both the SiNPs-textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs-textured counterparts. The quasi-omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

Enhanced photoelectrochemical response of plasmonic Au embedded BiVO4/Fe2O3 heterojunction.

Science.gov (United States)

Verma, Anuradha; Srivastav, Anupam; Khan, Saif A; Rani Satsangi, Vibha; Shrivastav, Rohit; Kumar Avasthi, Devesh; Dass, Sahab

2017-06-14

The effect of embedding Au nanoparticles (NPs) in a BiVO 4 /Fe 2 O 3 heterojunction for photoelectrochemical water splitting is studied here for the first time. The present nanostructured heterojunction offers three major advantages over pristine BiVO 4 and Fe 2 O 3 : (i) the formation of a heterojunction between BiVO 4 and Fe 2 O 3 enhances the charge carrier separation and transfer, (ii) the layer of Fe 2 O 3 provides protection to BiVO 4 from photocorrosion and, (iii) the Au NPs possessing surface plasmon resonance (SPR) enhance the photoelectrochemical response by transferring energy to metal oxides by hot electron transfer (HET) and plasmon resonant energy transfer (PRET). The present study reveals that the heterojunction ITO/BiVO 4 /Fe 2 O 3 (with 32% v/v Au solution in both layers) gives the best performance and mitigates the limitations of both pristine Fe 2 O 3 and BiVO 4 . A thirteen-fold increment in applied bias photon-to-current conversion efficiency (ABPE) was observed at 1.24 V vs. RHE under the condition of 1 Sun illumination. Monochromatic incident photon-to-current conversion efficiency (IPCE) measurements indicated that an Au embedded heterojunction is more effective in harvesting visible light in comparison to a heterojunction without Au NPs.

Strategies for optimizing organic solar cells. Correlation between morphology and performance in DCV6T-C{sub 60} heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Wynands, David

2011-02-04

This work investigates organic solar cells made of small molecules. Using the material system {alpha}{omega}-bis(dicyanovinylene)-sexithiophene (DCV6T)-C{sub 60} as model, the correlation between the photovoltaic active layer morphology and performance of the solar cell is studied. The chosen method for controlling the layer morphology is applying different substrate temperatures (T{sub sub}) during the deposition of the layer. In neat DCV6T layers, substrate heating induces higher crystallinity as is shown by X-ray diffraction and atomic force microscopy (AFM). The absorption spectrum displays a more distinct fine structure, a redshift of the absorption peaks by up to 11 nm and a significant increase of the low energy absorption band at T{sub sub}=120 C compared to T{sub sub}=30 C. Contrary to general expectations, the hole mobility as measured in field effect transistors and with the method of charge extraction by linearly increasing voltage (CELIV) does not increase in samples with higher crystallinity. In mixed layers, investigations by AFM and UV-Vis spectroscopy reveal a stronger phase separation induced by substrate heating, leading to larger domains of DCV6T. This is indicated by an increased grain size and roughness of the topography, the increase of the DCV6T luminescence signal, and the more distinct fine structure of the DCV6T related absorption. Based on the results of the morphology analysis, the effect of different substrate temperatures on the performance of solar cells with flat and mixed DCV6T-C{sub 60} heterojunctions is investigated. In flat heterojunction solar cells, a slight increase of the photocurrent by about 10% is observed upon substrate heating, attributed to the increase of DCV6T absorption. In mixed DCV6T:C{sub 60} heterojunction solar cells, much more pronounced enhancements are achieved. By varying the substrate temperature from -7 C to 120 C, it is shown that the stronger phase separation upon substrate heating facilitates the

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

Science.gov (United States)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Thin nanostructured crystalline TiO{sub 2} films and their applications in solar cells

Energy Technology Data Exchange (ETDEWEB)

Cheng Yajun

2007-06-15

Research on thin nanostructured crystalline TiO{sub 2} films has attracted considerable interests because of their intriguing physical properties and potential applications in photovoltaics. Nanostructured TiO{sub 2} film plays an important role in the TiO{sub 2} based dye-sensitized solar cells because they act as a substrate for the adsorption of dye molecules and a matrix for the transportation of electrons as well. Thus they can influence the solar cell performance significantly. Consequently, the control of the morphology including the shape, size and size distribution of the TiO{sub 2} nanostructures is critical to tune and optimize the performance of the solar cells. To control the TiO{sub 2} morphology, a strategy using amphiphilic block copolymer as templating agent coupled with sol-gel chemistry has been applied. Especially, a good-poor solvent pair induced phase separation process has been developed to guide the microphase separation behavior of the block copolymers. The amphiphilic block copolymers used include polystyrene-block-poly (ethylene oxide) (PS-b-PEO), poly (methyl methacrylate)-block-poly (ethylene oxide) (PMMA-b-PEO), and poly (ethylene oxide)-block-polystyrene-block-poly (ethylene oxide) (PEO-b-PS-b-PEO). The block copolymer undergoes a good-poor-solvent pair induced phase separation in a mixed solution of 1, 4-dioxane or N, N-dimethyl formamide (DMF), concentrated hydrochloric acid (HCl) and Titanium tetraisopropoxide (TTIP). Specifically, in the system of PS-b-PEO, a morphology phase diagram of the inorganic-copolymer composite films was mapped by adjusting the weight fractions among 1, 4-dioxane, HCl, and TTIP in solution. The amorphous TiO{sub 2} within the titania-block copolymer composite films was crystallized by calcination at temperatures above 400 C, where the organic block copolymer was simultaneously burned away. This strategy is further extended to other amphiphilic block copolymers of PMMA-b-PEO and PEO-b-PS-b-PEO, where the

Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

KAUST Repository

Clancy, Paulette

2012-05-01

We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

KAUST Repository

Clancy, Paulette

2012-01-01

We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

Fabrication of p-CuO/n-ZnO heterojunction diode via sol-gel spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Prabhu, Rajeev R., E-mail: rajeevrprabhu@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Saritha, A.C.; Shijeesh, M.R. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India); Centre for Advanced Materials, Cochin University of Science and Technology, Kochi 682 022 (India)

2017-06-15

Highlights: • Facile all-solution growth of nanostructured p-CuO and n-ZnO TSO films is reported. • Annealing the films in air affects the structural, electrical and optical properties. • p-n heterojunction using these films was fabricated in ITO/n-ZnO/p-CuO/Au structure. • Transparent heterojunction diode performed well with a V{sub on} of 2.5 V and n of 3.15. • Fabricated p-CuO/n-ZnO heterojunction diode can be used for UV detector application. - Abstract: We report a facile all-solution approach for the growth of nanostructured p-CuO and n-ZnO thin films. The influence of annealing temperature on the physical properties of CuO and ZnO thin films was examined. XRD and Raman spectra depict the structural and phase purity of solution grown CuO and ZnO films. The electrical as well as the optical properties of thin films were also studied. The average optical transmission of CuO and ZnO thin films in the visible spectral region was found to be above 80 and 95% respectively. Band gap energy variations on annealing temperature were investigated for CuO as well as ZnO films. Surface morphology analyzed by FESEM shows that the films are very smooth. All solution grown p-n heterojunction using p-CuO and n-ZnO films was fabricated in the structure ITO/n-ZnO/p-CuO/Au which showed rectification behavior with a turn on voltage of 2.5 V and an ideality factor of 3.15.

Monolayered Bi2WO6 nanosheets mimicking heterojunction interface with open surfaces for photocatalysis

Science.gov (United States)

Zhou, Yangen; Zhang, Yongfan; Lin, Mousheng; Long, Jinlin; Zhang, Zizhong; Lin, Huaxiang; Wu, Jeffrey C.-S.; Wang, Xuxu

2015-09-01

Two-dimensional-layered heterojunctions have attracted extensive interest recently due to their exciting behaviours in electronic/optoelectronic devices as well as solar energy conversion systems. However, layered heterojunction materials, especially those made by stacking different monolayers together by strong chemical bonds rather than by weak van der Waal interactions, are still challenging to fabricate. Here the monolayer Bi2WO6 with a sandwich substructure of [BiO]+-[WO4]2--[BiO]+ is reported. This material may be characterized as a layered heterojunction with different monolayer oxides held together by chemical bonds. Coordinatively unsaturated Bi atoms are present as active sites on the surface. On irradiation, holes are generated directly on the active surface layer and electrons in the middle layer, which leads to the outstanding performances of the monolayer material in solar energy conversion. Our work provides a general bottom-up route for designing and preparing novel monolayer materials with ultrafast charge separation and active surface.

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Understanding triplet formation pathways in bulk heterojunction polymer : fullerene photovoltaic devices

NARCIS (Netherlands)

Tedla, B.; Zhu, F.; Cox, M.; Drijkoningen, J.; Manca, J.V.; Koopmans, B.; Goovaerts, E.

2015-01-01

Triplet exciton (TE) formation pathways are systematically investigated in prototype bulk heterojunction (BHJ) "super yellow" poly(p-phenylene vinylene) (SY-PPV) solar cell devices with varying fullerene compositions using complementary optoelectrical and electrically detected magnetic resonance

Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

KAUST Repository

Barkhouse, D. Aaron R.

2011-05-26

The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of advanced nanostructured multijunction photoanodes for enhanced solar hydrogen generation via water splitting

Science.gov (United States)

Ishihara, Hidetaka

density was observed for the nano-capped titania nanotubes due to the enhanced charge transfer process. Similarly, another metal oxide semiconductor was investigated tungsten trioxide (WO3), which has a much higher absorption capability (12%) in the solar spectrum. The WO3 porous nanostructures suffered from surface corrosion resulting in a large reduction in the photocurrent density as a function of time in the alkaline electrolytes. However, with a protective coating of Indium Tin Oxide (100 nm), the surface corrosion of WO3 porous nanostructures was reduced. A large increase in the photocurrent density of as much as 340% was observed after the ITO was applied to the WO3 porous nanostructures

Low-temperature atomic layer deposition of MoO{sub x} for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Macco, B.; Vos, M.F.J.; Thissen, N.F.W.; Bol, A.A. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

2015-07-15

The preparation of high-quality molybdenum oxide (MoO{sub x}) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 C. The films are amorphous, slightly substoichiometric with respect to MoO{sub 3}, and free of other elements apart from hydrogen (<11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO{sub x} in hole-selective contacts for silicon heterojunction solar cells. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

International Nuclear Information System (INIS)

Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

2014-01-01

Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

Exploitation of inimitable properties of CuInS2 quantum dots for energy conversion in bulk heterojunction hybrid solar cell

Science.gov (United States)

Jindal, Shikha; Giripunje, Sushama M.

2017-11-01

Quantum dots (QDs) are the suitable material for solar cell devices owing to its distinctive optical, electrical and electronic properties. Currently, the most efficient devices have employed the toxic QDs which cause destructive impact on environment. In the present article, we have used environment benign CuInS2 QDs as an acceptor material in bulk heterojunction device of P3HT and QDs. The energy level positions corroborated from UPS spectra substantiates the acceptor property of CuInS2. We scrutinized the hybrid solar cell by tailoring the acceptor content in active layer. The increased acceptor content intensifies the performance of device. The enhancement in photovoltaic parameters is mainly due to the fast dissociation and extraction of photogenerated excitons which occurs with the larger wt% of acceptor QDs. Current density-voltage characteristics describes the greater V oc and I sc in the 60 wt% CuInS2 QDs based solar cell as compared to the low wt% of QDs in the active layer.

Mechanisms of electron transport and recombination in ZnO nanostructures for dye-sensitized solar cells.

Science.gov (United States)

Vega-Poot, Alberto G; Macías-Montero, Manuel; Idígoras, Jesus; Borrás, Ana; Barranco, Angel; Gonzalez-Elipe, Agustín R; Lizama-Tzec, Francisco I; Oskam, Gerko; Anta, Juan A

2014-04-14

ZnO is an attractive material for applications in dye-sensitized solar cells and related devices. This material has excellent electron-transport properties in the bulk but its electron diffusion coefficient is much smaller in mesoporous films. In this work the electron-transport properties of two different kinds of dye-sensitized ZnO nanostructures are investigated by small-perturbation electrochemical techniques. For nanoparticulate ZnO photoanodes prepared via a wet-chemistry technique, the diffusion coefficient is found to reproduce the typical behavior predicted by the multiple-trapping and the hopping models, with an exponential increase with respect to the applied bias. In contrast, in ZnO nanostructured thin films of controlled texture and crystallinity prepared via a plasma chemical vapor deposition method, the diffusion coefficient is found to be independent of the electrochemical bias. This observation suggests a different transport mechanism not controlled by trapping and electron accumulation. In spite of the quite different transport features, the recombination kinetics, the electron-collection efficiency and the photoconversion efficiency are very similar for both kinds of photoanodes, an observation that indicates that surface properties rather than electron transport is the main efficiency-determining factor in solar cells based on ZnO nanostructured photoanodes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid zinc oxide conjugated polymer bulk heterojunction solar cells

NARCIS (Netherlands)

Beek, W.J.E.; Wienk, M.M.; Kemerink, M.; Yang, X.N.; Janssen, R.A.J.

2005-01-01

Bulk heterojunction photovoltaic devices based on blends of a conjugated polymer poly[2-methoxy-5-(3‘,7‘-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) as electron donor and crystalline ZnO nanoparticles (nc-ZnO) as electron acceptor have been studied. Composite nc-ZnO:MDMO-PPV films were cast

Structure–property relationships of oligothiophene–isoindigo polymers for efficient bulk-heterojunction solar cells

KAUST Repository

Ma, Zaifei

2014-01-01

A series of alternating oligothiophene (nT)-isoindigo (I) copolymers (PnTI) were synthesized to investigate the influence of the oligothiophene block length on the photovoltaic (PV) properties of PnTI:PCBM bulk-heterojunction blends. Our study indicates that the number of thiophene rings (n) in the repeating unit alters both polymer crystallinity and polymer-fullerene interfacial energetics, which results in a decreasing open-circuit voltage (Voc) of the solar cells with increasing n. The short-circuit current density (Jsc) of P1TI:PCBM devices is limited by the absence of a significant driving force for electron transfer. Instead, blends based on P5TI and P6TI feature large polymer domains, which limit charge generation and thus Jsc. The best PV performance with a power conversion efficiency of up to 6.9% was achieved with devices based on P3TI, where a combination of a favorable morphology and an optimal interfacial energy level offset ensures efficient exciton separation and charge generation. The structure-property relationship demonstrated in this work would be a valuable guideline for the design of high performance polymers with small energy losses during the charge generation process, allowing for the fabrication of efficient solar cells that combine a minimal loss in Voc with a high Jsc. © 2014 The Royal Society of Chemistry.

A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Feng, Yamin, E-mail: yaminfengccnuphy@outlook.com; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.cn

2013-12-25

Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm{sup −2} illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes.

A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

International Nuclear Information System (INIS)

Feng, Yamin; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang

2013-01-01

Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm −2 illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

Science.gov (United States)

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

Intrinsic white-light emission from zinc oxide nanorods heterojunctions on large-area substrates

Science.gov (United States)

Willander, Magnus; Nur, O.; Zaman, S.; Zainelabdin, A.; Amin, G.; Sadaf, J. R.; Israr, M. Q.; Bano, N.; Hussain, I.; Alvi, N. H.

2011-02-01

Zinc oxide (ZnO) and especially in the nanostructure form is currently being intensively investigated world wide for the possibility of developing different new photonic devices. We will here present our recent findings on the controlled low temperature chemical growth of ZnO nanorods (NRs) on different large area substrates. Many different heterojunctions of ZnO NRs and p-substrates including those of crystalline e.g. p-GaN, p-SiC or amorphous nature e.g. p-polymer coated plastic and p-polymer coated paper will be shown. Moreover, the effect of the p-electrode of these heterojunctions on tuning the emitted wavelength and changing the light quality will be discussed. An example using ZnO NR/p-GaN will be shown and the electrical and electro-optical characteristics will be analyzed. For these heterojunctions the effect of post growth annealing and its effect on the electroluminescence (EL) spectrum will be shown. Finally, intrinsic white light emitting diodes based on ZnO NRs on foldable and disposable amorphous substrates (plastic and paper) will also be presented.

The influence of electrical effects on device performance of organic solar cells with nano-structured electrodes

DEFF Research Database (Denmark)

Mirsafaei, Mina; Hossein Fallahpour, Amir; Lugli, Paolo

2017-01-01

Integration of light-trapping features and exploitation of metal nanostructure plasmonic effects are promising approaches for enhancing the power conversion efficiency of organic solar cells. These approaches’ effects on the light absorption enhancement have been widely studied, especially in ino...

Embedded vertical dual of silver nanoparticles for improved ZnO/Si heterojunction solar cells

Science.gov (United States)

Shokeen, Poonam; Jain, Amit; Kapoor, Avinashi

2017-10-01

A ZnO/Si heterojunction solar cell is studied with plasmonic nanoparticles embedded in the active layer. Two layers of silver nanoparticles are embedded in the ZnO layer. The effect of various parameters such as vertical-interparticle distance, horizontal-interparticle distance, relative dimensions of nanoparticles, and order of particle diameters are discussed in detail. Finite-difference time-domain studies suggest that particle dimensions of the top layer of silver nanoparticles should be less than the dimensions of the underneath layer of silver nanoparticles. The resulting structure acquires the benefits of each layer and improves the device performance over a broad spectrum. The dielectric separation of plasmonic layers is observed to be an important factor in favorable plasmonic response. Electric field diagrams are used to study the scattering of an incident field by proposed structure. Results are encouraging and suggest more concerted studies of multilayer plasmonic structures.

Solvent polarity and nanoscale morphology in bulk heterojunction organic solar cells: A case study

Energy Technology Data Exchange (ETDEWEB)

Thomas, Ajith [Centre for Nano-Bio-Polymer Science and Technology, Department of Physics, St. Thomas College, Pala, Kerala 686574 (India); Research and Development Centre, Bharathiar University, Coimbatore, Tamilnadu 641046 (India); Elsa Tom, Anju; Ison, V. V., E-mail: isonvv@yahoo.in, E-mail: praveen@materials.iisc.ernet.in [Centre for Nano-Bio-Polymer Science and Technology, Department of Physics, St. Thomas College, Pala, Kerala 686574 (India); Rao, Arun D.; Varman, K. Arul; Ranjith, K.; Ramamurthy, Praveen C., E-mail: isonvv@yahoo.in, E-mail: praveen@materials.iisc.ernet.in [Department of Materials Engineering, Indian Institute of Science Bangalore, Karnataka 560012 (India); Vinayakan, R. [Department of Chemistry, SVR NSS College Vazhoor, Kerala 686505 (India)

2014-03-14

Organic bulk heterojunction solar cells were fabricated under identical experimental conditions, except by varying the solvent polarity used for spin coating the active layer components and their performance was evaluated systematically. Results showed that presence of nitrobenzene-chlorobenzene composition governs the morphology of active layer formed, which is due to the tuning of solvent polarity as well as the resulting solubility of the P3HT:PCBM blend. Trace amount of nitrobenzene favoured the formation of better organised P3HT domains, as evident from conductive AFM, tapping mode AFM and surface, and cross-sectional SEM analysis. The higher interfacial surface area thus generated produced cells with high efficiency. But, an increase in the nitrobenzene composition leads to a decrease in cell performance, which is due to the formation of an active layer with larger size polymer domain networks with poor charge separation possibility.

Solvent polarity and nanoscale morphology in bulk heterojunction organic solar cells: A case study

International Nuclear Information System (INIS)

Thomas, Ajith; Elsa Tom, Anju; Ison, V. V.; Rao, Arun D.; Varman, K. Arul; Ranjith, K.; Ramamurthy, Praveen C.; Vinayakan, R.

2014-01-01

Organic bulk heterojunction solar cells were fabricated under identical experimental conditions, except by varying the solvent polarity used for spin coating the active layer components and their performance was evaluated systematically. Results showed that presence of nitrobenzene-chlorobenzene composition governs the morphology of active layer formed, which is due to the tuning of solvent polarity as well as the resulting solubility of the P3HT:PCBM blend. Trace amount of nitrobenzene favoured the formation of better organised P3HT domains, as evident from conductive AFM, tapping mode AFM and surface, and cross-sectional SEM analysis. The higher interfacial surface area thus generated produced cells with high efficiency. But, an increase in the nitrobenzene composition leads to a decrease in cell performance, which is due to the formation of an active layer with larger size polymer domain networks with poor charge separation possibility

Organic / IV, III-V Semiconductor Hybrid Solar Cells

Directory of Open Access Journals (Sweden)

Pang-Leen Ong

2010-03-01

Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

KAUST Repository

Kramer, Illan J.; Zhitomirsky, David; Bass, John D.; Rice, Philip M.; Topuria, Teya; Krupp, Leslie; Thon, Susanna M.; Ip, Alexander H.; Debnath, Ratan; Kim, Ho-Cheol; Sargent, Edward H.

2012-01-01

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

KAUST Repository

Kramer, Illan J.

2012-03-30

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical preparation of hematite nanostructured films for solar hydrogen production

Directory of Open Access Journals (Sweden)

Ebadzadeh T.

2012-10-01

Full Text Available Photoelectrochemical water splitting is a clean and promising technique for using a renewable source of energy, i.e., solar energy, to produce hydrogen. In this work electrochemical formation of iron oxyhydroxide and its conversion to hematite (α- Fe2O3 through thermal treatment have been studied. Oxyhydroxide iron compounds have been prepared onto SnO2/F covered glass substrate by potential cycling with two different potential sweep rate values; then calcined at 520 °C in air to obtain α-Fe2O3 nanostrutured films for their implementation as photoanode in a photoelectrochemical cell. X-ray diffraction analysis allowed finding that iron oxides films have nanocrystalline character. Scanning electron microscopy revealed that films have nanostructured morphology. The obtained results are discussed considering the influence of potential sweep rate employed during the preparation of iron oxyhydroxide film on optical, structural and morphological properties of hematite nanostructured films. Results show that films have acceptable characteristics as photoanode in a photoelectrochemical cell for hydrogen generation from water.

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Energy Technology Data Exchange (ETDEWEB)

Talkenberg, Florian, E-mail: florian.talkenberg@ipht-jena.de; Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, D-07745 Jena (Germany); Radnóczi, György Zoltán; Pécz, Béla [Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege Miklós u. 29-33, H-1121 Budapest (Hungary); Dikhanbayev, Kadyrjan; Mussabek, Gauhar [Department of Physics and Engineering, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050040 Almaty (Kazakhstan); Gudovskikh, Alexander [Nanotechnology Research and Education Centre, St. Petersburg Academic University, Russian Academy of Sciences, Hlopina Str. 8/3, 194021 St. Petersburg (Russian Federation)

2015-07-15

Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

ZnO-graphene quantum dots heterojunctions for natural sunlight-driven photocatalytic environmental remediation

Science.gov (United States)

Kumar, Suneel; Dhiman, Ankita; Sudhagar, Pitchaimuthu; Krishnan, Venkata

2018-07-01

In this work, we report the formation of heterojunctions comprising of graphene quantum dots (GQD) decorated ZnO nanorods (NR) and its use as efficient photocatalysts for environmental remediation. The heterojunctions has been designed to be active both in the UV and visible light regions and anticipated utilize the maximum part of the solar light spectrum. In this view, we examined the photocatalytic performance of our heterojunctions towards the degradation of colored pollutant (methylene blue (MB) dye) and a colorless pollutant (carbendazim (CZ) fungicide) under sunlight irradiation. Compared to bare photocatalyst ZnO and GQD, the heterojunction with 2 wt% of GQD (ZGQD2) showed the best photocatalytic activity by effectively degrading (about 95%) of organic pollutants (MB and CZ) from water within a short span of 70 min. The superior photocatalytic activity of these ZnO-GQD heterojunctions could be attributed to efficient charge carrier separation lead suppressed recombination rate at photocatalyst interfaces. In addition to the enhanced light absorption from UV to visible region, the high specific surface area of ZGQD2 heterojunction (353.447 m2 g-1) also imparts strong adsorption capacity for pollutants over catalyst surface, resulting in high photoactivity. Based on the obtained results, band gap alignment at ZnO-GQD heterojunction and active species trapping experiments, a plausible mechanism is proposed for photocatalytic reaction. The excellent photostability and recyclability of the ZnO-GQD heterojunctions fostering as promising photocatalyst candidate for environmental remediation applications.

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Energy Technology Data Exchange (ETDEWEB)

Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

2014-12-15

Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

Directory of Open Access Journals (Sweden)

Youngseok Lee

2012-01-01

Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD

Directory of Open Access Journals (Sweden)

M. Maleki

2015-12-01

Full Text Available In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500◦C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

PbSe Nanocrystal Excitonic Solar Cells

KAUST Repository

Choi, Joshua J.

2009-11-11

We report the design, fabrication, and characterization of colloidal PbSe nanocrystal (NC)-based photovoltaic test structures that exhibit an excitonic solar cell mechanism. Charge extraction from the NC active layer is driven by a photoinduced chemical potential energy gradient at the nanostructured heterojunction. By minimizing perturbation to PbSe NC energy levels and thereby gaining insight into the "intrinsic" photovoltaic properties and charge transfer mechanism of PbSe NC, we show a direct correlation between interfacial energy level offsets and photovoltaic device performance. Size dependent PbSe NC energy levels were determined by cyclic voltammetry and optical spectroscopy and correlated to photovoltaic measurements. Photovoltaic test structures were fabricated from PbSe NC films sandwiched between layers of ZnO nanoparticles and PEDOT:PSS as electron and hole transporting elements, respectively. The device current-voltage characteristics suggest a charge separation mechanism that Is distinct from previously reported Schottky devices and consistent with signatures of excitonic solar cells. Remarkably, despite the limitation of planar junction structure, and without film thickness optimization, the best performing device shows a 1-sun power conversion efficiency of 3.4%, ranking among the highest performing NC-based solar cells reported to date. © 2009 American Chemical Society.

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

Science.gov (United States)

Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

2014-10-07

In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

Science.gov (United States)

Etgar, Lioz

2013-02-04

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Directory of Open Access Journals (Sweden)

Lioz Etgar

2013-02-01

Full Text Available Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Science.gov (United States)

Etgar, Lioz

2013-01-01

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

Science.gov (United States)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf

2018-01-01

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.

High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

Energy Technology Data Exchange (ETDEWEB)

Hubbard, Seth

2012-09-12

The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

Energy Technology Data Exchange (ETDEWEB)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan [Photovoltaics and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2002 Neuchâtel (Switzerland); Menda, Deneb; Özdemir, Orhan [Department of Physics, Yıldız Technical University, Davutpasa Campus, TR-34210 Esenler, Istanbul (Turkey); Descoeudres, Antoine; Barraud, Loris [CSEM, PV-Center, Jaquet-Droz 1, CH-2002 Neuchâtel (Switzerland)

2016-08-07

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.

Simple fabrication of back contact heterojunction solar cells by plasma ion implantation

Science.gov (United States)

Koyama, Koichi; Yamaguchi, Noboru; Hironiwa, Daisuke; Suzuki, Hideo; Ohdaira, Keisuke; Matsumura, Hideki

2017-08-01

A back-contact amorphous-silicon (a-Si)/crystalline silicon (c-Si) heterojunction is one of the most promising structures for high-efficiency solar cells. However, the patterning of back-contact electrodes causes the increase in fabrication cost. Thus, to simplify the fabrication of back-contact cells, we attempted to form p-a-Si/i-a-Si/c-Si and n-a-Si/i-a-Si/c-Si regions by the conversion of a patterned area of p-a-Si/i-a-Si/c-Si to n-a-Si/i-a-Si/c-Si by plasma ion implantation. It is revealed that the conversion of the conduction type can be realized by the plasma ion implantation of phosphorus (P) atoms into p-a-Si/i-a-Si/c-Si regions, and also that the quality of passivation can be kept sufficiently high, the same as that before ion implantation, when the samples are annealed at around 250 °C and also when the energy and dose of ion implantation are appropriately chosen for fitting to a-Si layer thickness and bulk c-Si carrier density.

Preparation of TNAs/NiO p-n heterojunction and their applications in UV photosensor

Science.gov (United States)

Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

2018-05-01

A nanocomposite consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 µW/cm2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation

Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

Directory of Open Access Journals (Sweden)

Santiago Silvestre

2015-04-01

Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

Graphene-based heterojunction photocatalysts

Science.gov (United States)

Li, Xin; Shen, Rongchen; Ma, Song; Chen, Xiaobo; Xie, Jun

2018-02-01

Due to their unique physicochemical, optical and electrical properties, 2D semimetallic or semiconducting graphene has been extensively utilized to construct highly efficient heterojunction photocatalysts for driving a variety of redox reactions under proper light irradiation. In this review, we carefully addressed the fundamental mechanism of heterogeneous photocatalysis, fundamental properties and advantages of graphene in photocatalysis, and classification and comparison of graphene-based heterojunction photocatalysts. Subsequently, we thoroughly highlighted and discussed various graphene-based heterojunction photocatalysts, including Schottky junctions, Type-II heterojunctions, Z-scheme heterojunctions, Van der Waals heterostructures, in plane heterojunctions and multicomponent heterojunctions. Several important photocatalytic applications, such as photocatalytic water splitting (H2 evolution and overall water splitting), degradation of pollutants, carbon dioxide reduction and bacteria disinfection, are also summarized. Through reviewing the important advances on this topic, it may inspire some new ideas for exploiting highly effective graphene-based heterojunction photocatalysts for a number of applications in photocatlysis and other fields, such as photovoltaic, (photo)electrocatalysis, lithium battery, fuel cell, supercapacitor and adsorption separation.

Hyperbranched quasi-1D nanostructures for solid-state dye-sensitized solar cells.

Science.gov (United States)

Passoni, Luca; Ghods, Farbod; Docampo, Pablo; Abrusci, Agnese; Martí-Rujas, Javier; Ghidelli, Matteo; Divitini, Giorgio; Ducati, Caterina; Binda, Maddalena; Guarnera, Simone; Li Bassi, Andrea; Casari, Carlo Spartaco; Snaith, Henry J; Petrozza, Annamaria; Di Fonzo, Fabio

2013-11-26

In this work we demonstrate hyperbranched nanostructures, grown by pulsed laser deposition, composed of one-dimensional anatase single crystals assembled in arrays of high aspect ratio hierarchical mesostructures. The proposed growth mechanism relies on a two-step process: self-assembly from the gas phase of amorphous TiO2 clusters in a forest of tree-shaped hierarchical mesostructures with high aspect ratio; oriented crystallization of the branches upon thermal treatment. Structural and morphological characteristics can be optimized to achieve both high specific surface area for optimal dye uptake and broadband light scattering thanks to the microscopic feature size. Solid-state dye sensitized solar cells fabricated with arrays of hyperbranched TiO2 nanostructures on FTO-glass sensitized with D102 dye showed a significant 66% increase in efficiency with respect to a reference mesoporous photoanode and reached a maximum efficiency of 3.96% (among the highest reported for this system). This result was achieved mainly thanks to an increase in photogenerated current directly resulting from improved light harvesting efficiency of the hierarchical photoanode. The proposed photoanode overcomes typical limitations of 1D TiO2 nanostructures applied to ss-DSC and emerges as a promising foundation for next-generation high-efficiency solid-state devices comprosed of dyes, polymers, or quantum dots as sensitizers.

One pot synthesis of multi-functional tin oxide nanostructures for high efficiency dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Wali, Qamar; Fakharuddin, Azhar; Yasin, Amina; Ab Rahim, Mohd Hasbi; Ismail, Jamil; Jose, Rajan, E-mail: rjose@ump.edu.my

2015-10-15

Photoanode plays a key role in dye sensitized solar cells (DSSCs) as a scaffold for dye molecules, transport medium for photogenerated electrons, and scatters light for improved absorption. Herein, tin oxide nanostructures unifying the above three characteristics were optimized by a hydrothermal process and used as photoanode in DSSCs. The optimized morphology is a combination of hollow porous nanoparticles of size ∼50 nm and micron sized spheres with BET surface area (up to 29 m{sup 2}/g) to allow large dye-loading and light scattering as well as high crystallinity to support efficient charge transport. The optimized morphology gave the highest photovoltaic conversion efficiency (∼7.5%), so far achieved in DSSCs with high open circuit voltage (∼700 mV) and short circuit current density (∼21 mA/cm{sup 2}) employing conventional N3 dye and iodide/triiodide electrolyte. The best performing device achieved an incident photon to current conversion efficiency of ∼90%. The performance of the optimized tin oxide nanostructures was comparable to that of conventional titanium based DSSCs fabricated at similar conditions. - Graphical abstract: Tin oxide hollow nanostructure simultaneously supporting improved light scattering, dye-loading, and charge transport yielded high photovoltaic conversion efficiency in dye-sensitized solar cells. - Highlights: • Uniformly and bimodelly distributed tin oxide hollow nanospheres (HNS) are synthesized. • Uniform HNS are of size ∼10 nm; bimodel HNS has additional size up to ∼800 nm. • They are evaluated as photoelectrodes in dye-sensitized solar cells (DSSCs). • The uniform HNS increase dye-loading and the larger increase light scattering in DSSCs. • Photo conversion efficiency ∼7.5% is achieved using bimodel HNS.

Unraveling current hysteresis effects in regular-type C60-CH3NH3PbI3 heterojunction solar cells.

Science.gov (United States)

Chen, Lung-Chien; Lin, Yu-Shiang; Tang, Po-Wen; Tai, Chao-Yi; Tseng, Zong-Liang; Lin, Ja-Hon; Chen, Sheng-Hui; Kuo, Hao-Chung

2017-11-23

Comprehensive studies were carried out to understand the origin of the current hysteresis effects in highly efficient C 60 -CH 3 NH 3 PbI 3 (MAPbI 3 ) heterojunction solar cells, using atomic-force microscopy, transmittance spectra, photoluminescence spectra, X-ray diffraction patterns and a femtosecond time-resolved pump-probe technique. The power conversion efficiency (PCE) of C 60 -MAPbI 3 solar cells can be increased to 18.23% by eliminating the point (lattice) defects in the MAPbI 3 thin film which is fabricated by using the one-step spin-coating method with toluene washing treatment. The experimental results show that the point defects and surface defects of the MAPbI 3 thin films can be minimized by varying the dropping time of the washing solvent. The point defects (surface defects) can be reduced with an (a) increase (decrease) in the dropping time, resulting in an optimized dropping time for obtaining the defect-minimized MAPbI 3 thin film deposited on top of the C 60 thin film. Consequently, the formation of the defect-minimized MAPbI 3 thin film allows for high-efficiency MAPbI 3 solar cells.

The importance of fullerene percolation in the mixed regions of polymer-fullerene bulk heterojunction solar cells

KAUST Repository

Bartelt, Jonathan A.; Beiley, Zach M.; Hoke, Eric T.; Mateker, William R.; Douglas, Jessica D.; Collins, Brian A.; Tumbleston, John R.; Graham, Kenneth; Amassian, Aram; Ade, Harald W.; Frechet, Jean; Toney, Michael F.; McGehee, Michael D.

2012-01-01

Most optimized donor-acceptor (D-A) polymer bulk heterojunction (BHJ) solar cells have active layers too thin to absorb greater than - 80% of incident photons with energies above the polymer's band gap. If the thickness of these devices could be increased without sacrifi cing internal quantum effi ciency, the device power conversion effi ciency (PCE) could be signifi cantly enhanced. We examine the device characteristics of BHJ solar cells based on poly(di(2- ethylhexyloxy)benzo[1,2- b :4,5- b ' ]dithiophene- co -octylthieno[3,4- c ]pyrrole-4,6- dione) (PBDTTPD) and [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) with 7.3% PCE and fi nd that bimolecular recombination limits the active layer thickness of these devices. Thermal annealing does not mitigate these bimolecular recombination losses and drastically decreases the PCE of PBDTTPD BHJ solar cells. We characterize the morphology of these BHJs before and after thermal annealing and determine that thermal annealing drastically reduces the concentration of PCBM in the mixed regions, which consist of PCBM dispersed in the amorphous portions of PBDTTPD. Decreasing the concentration of PCBM may reduce the number of percolating electron transport pathways within these mixed regions and create morphological electron traps that enhance charge-carrier recombination and limit device quantum effi ciency. These fi ndings suggest that (i) the concentration of PCBM in the mixed regions of polymer BHJs must be above the PCBM percolation threshold in order to attain high solar cell internal quantum effi ciency, and (ii) novel processing techniques, which improve polymer hole mobility while maintaining PCBM percolation within the mixed regions, should be developed in order to limit bimolecular recombination losses in optically thick devices and maximize the PCE of polymer BHJ solar cells. © 2013 WILEY-VCH Verlag GmbH and Co. © 2013 WILEY-VCH Verlag GmbH & Co.

The importance of fullerene percolation in the mixed regions of polymer-fullerene bulk heterojunction solar cells

KAUST Repository

Bartelt, Jonathan A.

2012-10-26

Most optimized donor-acceptor (D-A) polymer bulk heterojunction (BHJ) solar cells have active layers too thin to absorb greater than - 80% of incident photons with energies above the polymer\\'s band gap. If the thickness of these devices could be increased without sacrifi cing internal quantum effi ciency, the device power conversion effi ciency (PCE) could be signifi cantly enhanced. We examine the device characteristics of BHJ solar cells based on poly(di(2- ethylhexyloxy)benzo[1,2- b :4,5- b \\' ]dithiophene- co -octylthieno[3,4- c ]pyrrole-4,6- dione) (PBDTTPD) and [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) with 7.3% PCE and fi nd that bimolecular recombination limits the active layer thickness of these devices. Thermal annealing does not mitigate these bimolecular recombination losses and drastically decreases the PCE of PBDTTPD BHJ solar cells. We characterize the morphology of these BHJs before and after thermal annealing and determine that thermal annealing drastically reduces the concentration of PCBM in the mixed regions, which consist of PCBM dispersed in the amorphous portions of PBDTTPD. Decreasing the concentration of PCBM may reduce the number of percolating electron transport pathways within these mixed regions and create morphological electron traps that enhance charge-carrier recombination and limit device quantum effi ciency. These fi ndings suggest that (i) the concentration of PCBM in the mixed regions of polymer BHJs must be above the PCBM percolation threshold in order to attain high solar cell internal quantum effi ciency, and (ii) novel processing techniques, which improve polymer hole mobility while maintaining PCBM percolation within the mixed regions, should be developed in order to limit bimolecular recombination losses in optically thick devices and maximize the PCE of polymer BHJ solar cells. © 2013 WILEY-VCH Verlag GmbH and Co. © 2013 WILEY-VCH Verlag GmbH & Co.

Interfacial Characteristics of Efficient Bulk Heterojunction Solar Cells Fabricated on MoOx Anode Interlayers.

Science.gov (United States)

Jasieniak, Jacek J; Treat, Neil D; McNeill, Christopher R; de Villers, Bertrand J Tremolet; Della Gaspera, Enrico; Chabinyc, Michael L

2016-05-01

The role of the interface between an MoOx anode interlayer and a polymer:fullerene bulk heterojunction is investigated. Processing differences in the MoOx induce large variations in the vertical stratification of the bulk heterojunction films. These variations are found to be inconsistent in predicting device performance, with a much better gauge being the quantity of polymer chemisorbed to the anode interlayer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

Science.gov (United States)

Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

2017-06-29

The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

Dependence of crystallite formation and preferential backbone orientations on the side chain pattern in PBDTTPD polymers

KAUST Repository

El Labban, Abdulrahman; Warnan, Julien; Cabanetos, Clement; Ratel, Olivier; Tassone, Christopher J.; Toney, Michael F.; Beaujuge, Pierre

2014-01-01

-effect transistors (FETs) and bulk-heterojunction (BHJ) solar cells. Beyond film-forming properties, recent work has emphasized the determining role that side-chain substituents play on polymer self-assembly and thin-film nanostructural order, and, in turn, on device

ZnO thin films and nanostructures for emerging optoelectronic applications

Science.gov (United States)

Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

2010-02-01

ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

Science.gov (United States)

Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

2017-01-01

A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

Synthesis, characterization and nano-structuration of poly-thiophene derivatives for organic photovoltaic solar cells

International Nuclear Information System (INIS)

Berson, S.

2007-10-01

This work is devoted to the synthesis of poly-thiophene derivatives with low bandgap and preserving high oxidation potential. Disubstituted thiophenes and 'Donor-Acceptor' bi-thiophenes were synthesized and then polymerized. The side chains of these polymers, donor or acceptor, were modified in order to tune the properties of material as well from the optical point of view as electrochemical. These polymers were also tested in blend with PCBM in bulk-heterojunction photovoltaic cells. Voc delivered by the devices showed a linear dependence according to the potential of oxidation of the polymers. Copolymers containing cyano-thiophene and alkyl- or alkoxy-thiophene showed values of 0.8 V. However, in spite of power conversion efficiency of 1 %, these performances remain lower than the one obtained with the P3HT. Optimizations in terms of morphology are certainly necessary. Indeed, the morphology of the active layer plays a key role in obtaining high power conversion efficiency. An original technique of nano-structuration of the polymer on a nano-metric scale was developed during this work, leading to the development of fibrillar P3HT. These nano-structures, presenting an important degree of order, are formed spontaneously in solution. Their rate compared to amorphous material is perfectly controllable and adjustable in solution and in solid state. Measurements of mobilities show a strong improvement of the transport of load within these fibrillar layers compared to a traditional film of P3HT obtained without annealing. Power conversion efficiencies of 3.6% on glass and 3.3 % on plastic were reached without annealing. (author)

Synthesis, characterization and nano-structuration of poly-thiophene derivatives for organic photovoltaic solar cells

International Nuclear Information System (INIS)

Berson, S.

2007-10-01

This work is devoted to the synthesis of poly-thiophene derivatives with low bandgap and preserving high oxidation potential. Di-substituted thiophenes and 'Donor-Acceptor' bi-thiophenes were synthesized and then polymerized. The side chains of these polymers, donor or acceptor, were modified in order to tune the properties of material as well from the optical point of view as electrochemical. These polymers were also tested in blend with PCBM in bulk-heterojunction photovoltaic cells. Voc delivered by the devices showed a linear dependence according to the potential of oxidation of the polymers. Copolymers containing cyano-thiophene and alkyl- or alkoxy-thiophene showed values of 0.8 V. However, in spite of power conversion efficiency of 1 %, these performances remain lower than the one obtained with the P3HT. Optimizations in terms of morphology are certainly necessary. Indeed, the morphology of the active layer plays a key role in obtaining high power conversion efficiency. An original technique of nano-structuration of the polymer on a nano-metric scale was developed during this work, leading to the development of fibrillary P3HT. These nano-structures, presenting an important degree of order, are formed spontaneously in solution. Their rate compared to amorphous material is perfectly controllable and adjustable in solution and in solid state. Measurements of mobilities show a strong improvement of the transport of load within these fibrillary layers compared to a traditional film of P3HT obtained without annealing. Power conversion efficiencies of 3.6 % on glass and 3.3 % on plastic were reached without annealing. (author)

Electrical properties of CdS/CdTe heterojunctions

International Nuclear Information System (INIS)

Chu, T.L.; Chu, S.S.; Ang, S.T.

1988-01-01

The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. Using the in situ cleaning technique, solar cells of about 1 cm 2 area have achieved an AM 1.5 (global) efficiency of about 10.5%

High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

KAUST Repository

Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

2015-01-01

Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

Science.gov (United States)

Hossain, Jaker; Ohki, Tatsuya; Ichikawa, Koki; Fujiyama, Kazuhiko; Ueno, Keiji; Fujii, Yasuhiko; Hanajiri, Tatsuro; Shirai, Hajime

2016-03-01

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated in terms of cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature Ts, and substrate dc bias Vs as variables for efficient PEDOT:PSS/crystalline silicon (c-Si) heterojunction solar cells. The high-speed-camera and differential mobility analysis characterizations revealed that the average size and flux of PEDOT:PSS mist depend on f, type of solvent, and Vs. Film deposition occurred when positive Vs was applied to the c-Si substrate at Ts of 30-40 °C, whereas no deposition of films occurred with negative Vs, implying that the film is deposited mainly from negatively charged mist. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrates by adjusting Ts and Vs. The adhesion of CMD PEDOT:PSS film to c-Si was greatly enhanced by applying substrate dc bias Vs compared with that of spin-coated film. The CMD PEDOT:PSS/c-Si heterojunction solar cell devices on textured c-Si(100) in 2 × 2 cm2 exhibited a power conversion efficiency η of 11.0% with better uniformity of the solar cell parameters. Furthermore, η was increased to 12.5% by adding an AR coating layer of molybdenum oxide MoOx formed by CMD. These findings suggest that CMD with negatively charged mist has great potential for the uniform deposition of organic and inorganic materials on textured c-Si substrates by suitably adjusting Ts and Vs.

Development of the morphology during functional stack build-up of P3HT:PCBM bulk heterojunction solar cells with inverted geometry.

Science.gov (United States)

Wang, Weijia; Pröller, Stephan; Niedermeier, Martin A; Körstgens, Volker; Philipp, Martine; Su, Bo; Moseguí González, Daniel; Yu, Shun; Roth, Stephan V; Müller-Buschbaum, Peter

2015-01-14

Highly efficient poly(3-hexylthiophene-2,5-diyl) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction solar cells are achieved by using an inverted geometry. The development of the morphology is investigated as a function of the multilayer stack assembling during the inverted solar cell preparation. Atomic force microscopy is used to reveal the surface morphology of each stack, and the inner structure is probed with grazing incidence small-angle X-ray scattering. It is found that the smallest domain size of P3HT is introduced by replicating the fluorine-doped tin oxide structure underneath. The structure sizes of the P3HT:PCBM active layer are further optimized after thermal annealing. Compared to devices with standard geometry, the P3HT:PCBM layer in the inverted solar cells shows smaller domain sizes, which are much closer to the exciton diffusion length in the polymer. The decrease in domain sizes is identified as the main reason for the improvement of the device performance.

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

KAUST Repository

Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

2014-01-01

In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

International Nuclear Information System (INIS)

Das, Sonali; Kundu, Avra; Saha, Hiranmay; Datta, Swapan K

2016-01-01

Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (∼10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (∼3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon–electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

International Nuclear Information System (INIS)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian; Zhou, Xiao; Qin, Donghuan; Wu, Hongbin; Xia, Yuxin; Hou, Lintao; Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui

2013-01-01

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO x /Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl 2 annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl 2 annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl 2 -annealing conditions (370 °C CdCl 2 annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl 2 -annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V OC of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage

Photovoltaic properties of pentacene/[6,6]-phenyl C61 butyric acid methyl ester based bilayer hetero-junction solar cells

International Nuclear Information System (INIS)

Reddy, V S; Karak, S; Ray, S K; Dhar, A

2009-01-01

The photovoltaic properties of devices based on a new combination, pentacene/[6,6]-phenyl C 61 butyric acid methyl ester (PCBM) bilayer hetero-junctions, were investigated. The crystallinity of pentacene was found to be improved by depositing a PEDOT : PSS layer on an indium tin oxide substrate, which in turn doubled the power conversion efficiency of the device. The PCBM layer showed a significant contribution to the device photocurrent, which originated mainly due to the dissociation of excitons at the pentacene/PCBM interface. By optimizing the thickness of the pentacene and PCBM layers, a broader photo-response was obtained in the external quantum efficiency spectra indicating efficient light harvesting throughout the visible region of the solar spectrum.

Theoretical investigation on heterojunction solar cell

International Nuclear Information System (INIS)

Prema, K.; Geetha, K.

1986-11-01

The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Design, fabrication, and characterization of polymer based bulk heterojunction solar cells with enhanced efficiencies

Science.gov (United States)

Lu, Haiwei

Polymer based bulk heterojunction (BHJ) solar cells offer promising technological advantages for actualization of low-cost and large-area fabrication on flexible substrates. To reach the envisaged market entry figure of 10% power conversion efficiency (PCE), it is crucial that more solar energy is utilized in the active layer, requiring both higher energy conversion efficiency and expansion of the absorption spectrum of the active layer to near infrared (NIR) region. The research introduced in this dissertation is an effort to increase PCE of solar cells from the aforementioned two directions. In the first method, carbon nanotubes (CNTs) were incorporated into polymer-fullerene BHJ solar cells to increase the hole-collection efficiency. Devices with CNT monolayer networks placed at different positions were fabricated, and the impact of CNTs on device performance was studied. It was demonstrated that CNTs placed on the hole-collection side of the device resulted in optimized performance, with PCE increased from 4% to 4.9%. To realize the controlled deposition of a uniform layer of CNTs on different positions, a mild plasma treatment of the active-layer was employed, and the influence of plasma treatment on device performance was also studied. In the second strategy, I developed an approach to expand the absorption spectrum to NIR region. In this case, hybrid polymer based BHJ solar cells composed of pyridine-capped PbS (PbS-py) quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) were proposed. With pyridines as capping ligands, devices showed superior performance compared to with conventionally used oleate agents. PbS QDs with bandgaps of ˜1.13-1.38 eV offered the advantage of energetically favorable charge separation between P3HT and PbS QDs for photoexcitons in both visible and NIR regions. It was also found that thermal annealing leads to the removal of excess and interfacial pyridine ligands in polymer/QDs composites, and thus provides intimate electrical

NANOSTRUCTURED TiO2 SENSITIZED WITH PORPHYRINS FOR SOLAR WATER-SPLITTING

Directory of Open Access Journals (Sweden)

MARCELA-CORINA ROŞU

2011-03-01

Full Text Available Nanostructured TiO2 sensitized with porphyrins for Solar water-splitting.The production of hydrogen from water using solar light is very promising for generations of an ecologically pure carrier contributing to a clean, sustainable and renewable energy system. The selection of specific photocatalyst material for hydrogen production in photoelectrochemical cells (PECs is based on some important characteristics of semiconductor, such as photo-corrosion and chemical corrosion stability, photocatalytic potential, high sensitivity for UV-visible light. In the present paper, different nanocrystalline TiO2 photoanodes have been prepared via wet-chemical techniques followed by annealing treatment and sensitized with porphyrins and supramolecular complexes of porphyrins. The so obtained photocatalysts were characterized with UV-VIS absorption spectroscopy and spectrofluorimetry. The purpose of these experiments is to show if the prepared materials possess the necessary photocatalytic characteristics and if they can be used with success in H2 production from water decomposition in PECs.

Effects of alkyl chain length and substituent pattern of fullerene bis-adducts on film structures and photovoltaic properties of bulk heterojunction solar cells.

Science.gov (United States)

Tao, Ran; Umeyama, Tomokazu; Kurotobi, Kei; Imahori, Hiroshi

2014-10-08

A series of alkoxycarbonyl-substituted dihydronaphthyl-based [60]fullerene bis-adduct derivatives (denoted as C2BA, C4BA, and C6BA with the alkyl chain of ethyl, n-butyl, and n-hexyl, respectively) have been synthesized to investigate the effects of alkyl chain length and substituent pattern of fullerene bis-adducts on the film structures and photovoltaic properties of bulk heterojunction polymer solar cells. The shorter alkyl chain length caused lower solubility of the fullerene bis-adducts (C6BA > C4BA > C2BA), thereby resulting in the increased separation difficulty of respective bis-adduct isomers. The device performance based on poly(3-hexylthiophene) (P3HT) and the fullerene bis-adduct regioisomer mixtures was enhanced by shortening the alkyl chain length. When using the regioisomerically separated fullerene bis-adducts, the devices based on trans-2 and a mixture of trans-4 and e of C4BA exhibited the highest power conversion efficiencies of ca. 2.4%, which are considerably higher than those of the C6BA counterparts (ca. 1.4%) and the C4BA regioisomer mixture (1.10%). The film morphologies as well as electron mobilities of the P3HT:bis-adduct blend films were found to affect the photovoltaic properties considerably. These results reveal that the alkyl chain length and substituent pattern of fullerene bis-adducts significantly influence the photovoltaic properties as well as the film structures of bulk heterojunction solar cells.

Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Sandro Lattante

2014-03-01

Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

KAUST Repository

Abdallah, Amir

2017-09-22

We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell\\'s configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

KAUST Repository

Abdallah, Amir; Daif, Ounsi El; Aï ssa, Brahim; Kivambe, Maulid; Tabet, Nouar; Seif, Johannes; Haschke, Jan; Cattin, Jean; Boccard, Mathieu; De Wolf, Stefaan; Ballif, Christophe

2017-01-01

We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

International Nuclear Information System (INIS)

Gupta, Vinay; Upreti, Tanvi; Chand, Suresh

2013-01-01

We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl) bis(6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh 2 ) 2 : Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh 2 ) 2 : CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh 2 ) 2 :CdSe::60:40 leads to a short circuit current density (J sc ) = 5.45 mA/cm 2 , open circuit voltage (V oc ) = 0.727 V, and fill factor (FF) = 51%, and a power conversion efficiency = 2.02% at 100 mW/cm 2 under AM1.5G illumination. The J sc and FF are sensitive to the ratio of p-DTS(FBTTh 2 ) 2 :CdSe, which is a crucial factor for the device performance

a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

Energy Technology Data Exchange (ETDEWEB)

Rostan, Philipp Johannes

2010-07-01

internal quantum efficiency shows that both types of back contacts lead to effective diffusion lengths in excess of 600 {mu}m. An extended fill factor analysis shows that fill factor limitations for the full-area a-Si:H/c-Si contacts result from non-ideal diode behavior, ascribed to the injection dependence of the heterojunction interface recombination velocity. Analysis of the external quantum efficiency under back side illumination with different bias light intensities delivers the effective surface recombination S{sub eff}({phi}) in dependance of the illumination intensity {phi}. The front contact (emitter) uses a sequence of intrinsic and phosphorous doped amorphous silicon layers together with a ZnO:Al or a SnO{sub 2}:In layer and an Al front contact grid. The emitter is prepared at a maximum temperature of 220 C. Measurements of the minority carrier lifetime on symmetric i/n-a-Si:H coated wafers judge the emitter passivation quality. The best solar cells that use a thermal oxide back side passivation with Al-point contacts and flat a-Si:H emitters have open circuit voltages up to 683 mV and efficiencies up to 17.4 %. The efficiency of such devices is limited by a low short circuit current due to the flat front side. Using the same back contact structure with random pyramid textured wafer front sides and a-Si:H emitters yields open circuit voltages up to 660 mV and efficiencies up to 18.5 %, so far limited by a relatively low fill factor FF {<=} 74.3 %. Analysis of the external quantum efficiency underlines the excellent surface passivation properties of the amorphous emitter. Combining both, amorphous front- and back contacts yields p-type heterojunction solar cells completely fabricated at temperatures below 220 C. The best devices reach an open circuit voltage V{sub oc} = 678 mV and an efficiency {eta} = 18.1 % with random textured wafers, limited by low fill factors FF {approx} 75 %. Besides the cell fabrication and characterization, this thesis reveals that the

Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells

KAUST Repository

Wang, Hsin Ping

2016-03-02

The Si heterojunction (SHJ) solar cell is presently the most popular design in the crystalline Si (c-Si) photovoltaics due to the high open-circuit voltages (V). Photon management by surface structuring techniques to control the light entering the devices is critical for boosting cell efficiency although it usually comes with the V loss caused by severe surface recombination. For the first time, the periodic inverted pyramid (IP) structure fabricated by photolithography and anisotropic etching processes was employed for SHJ solar cells, demonstrating concurrent improvement in optical and electrical characteristics (i.e., short-circuit current density (J) and V). Periodic IP structures show superior light-harvesting properties as most of the incident rays bounce three times on the walls of the IPs but only twice between conventional random upright pyramids (UPs). The high minority carrier lifetime of the IP structures after a-Si:H passivation results in an enhanced V by 28 mV, showing improved carrier collection efficiency due to the superior passivation of the IP structure over the random UP structures. The superior antireflective (AR) ability and passivation results demonstrate that the IP structure has the potential to replace conventional UP structures to further boost the efficiency in solar cell applications.

An easy-to-fabricate low-temperature TiO2 electron collection layer for high efficiency planar heterojunction perovskite solar cells

Directory of Open Access Journals (Sweden)

B. Conings

2014-08-01

Full Text Available Organometal trihalide perovskite solar cells arguably represent the most auspicious new photovoltaic technology so far, as they possess an astonishing combination of properties. The impressive and brisk advances achieved so far bring forth highly efficient and solution processable solar cells, holding great promise to grow into a mature technology that is ready to be embedded on a large scale. However, the vast majority of state-of-the-art perovskite solar cells contains a dense TiO2 electron collection layer that requires a high temperature treatment (>450 °C, which obstructs the road towards roll-to-roll processing on flexible foils that can withstand no more than ∼150 °C. Furthermore, this high temperature treatment leads to an overall increased energy payback time and cumulative energy demand for this emerging photovoltaic technology. Here we present the implementation of an alternative TiO2 layer formed from an easily prepared nanoparticle dispersion, with annealing needs well within reach of roll-to-roll processing, making this technology also appealing from the energy payback aspect. Chemical and morphological analysis allows to understand and optimize the processing conditions of the TiO2 layer, finally resulting in a maximum obtained efficiency of 13.6% for a planar heterojunction solar cell within an ITO/TiO2/CH3NH3PbI3-xClxpoly(3-hexylthiophene/Ag architecture.

p-p Heterojunction of Nickel Oxide-Decorated Cobalt Oxide Nanorods for Enhanced Sensitivity and Selectivity toward Volatile Organic Compounds.

Science.gov (United States)

Suh, Jun Min; Sohn, Woonbae; Shim, Young-Seok; Choi, Jang-Sik; Song, Young Geun; Kim, Taemin L; Jeon, Jong-Myeong; Kwon, Ki Chang; Choi, Kyung Soon; Kang, Chong-Yun; Byun, Hyung-Gi; Jang, Ho Won

2018-01-10

The utilization of p-p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p-n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (Co 3 O 4 ) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method. The effective decoration of NiO on the entire surface of Co 3 O 4 NRs enabled the formation of numerous p-p heterojunctions, and they exhibited a 16.78 times higher gas response to 50 ppm of C 6 H 6 at 350 °C compared to that of bare Co 3 O 4 NRs with the calculated detection limit of approximately 13.91 ppb. Apart from the p-p heterojunctions, increased active sites owing to the changes in the orientation of the exposed lattice surface and the catalytic effects of NiO also contributed to the enhanced gas sensing properties. The advantages of p-p heterojunctions for gas sensing applications demonstrated in this work will provide a new perspective of heterostructured metal-oxide nanostructures for sensitive and selective gas sensing.

Graded Heterojunction Engineering for Hole-Conductor-Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity.

Science.gov (United States)

Li, Bo; Zhang, Yanan; Zhang, Luyuan; Yin, Longwei

2017-10-01

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic-organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3- x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3- x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3- x . The CsPbBr x I 3- x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron-hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

Energy Technology Data Exchange (ETDEWEB)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian [South China University of Technology, School of Materials Science and Engineering (China); Zhou, Xiao; Qin, Donghuan, E-mail: qindh@scut.edu.cn; Wu, Hongbin [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China); Xia, Yuxin; Hou, Lintao [Jinan University, College of Science and Engineering (China); Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China)

2013-11-15

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO{sub x}/Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl{sub 2} annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl{sub 2} annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl{sub 2}-annealing conditions (370 °C CdCl{sub 2} annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl{sub 2}-annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V{sub OC} of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage.

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

Energy Technology Data Exchange (ETDEWEB)

Hazra, Purnima; Singh, Satyendra Kumar [Department of Electronics and Communication Engineering, Motilal Neheru National Institute of Technology, Allahabad 211004 (India); Jit, Satyabrata, E-mail: sjit.ece@itbhu.ac.in [Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005 (India)

2015-01-01

In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Topological insulator nanowires and nanowire hetero-junctions

Science.gov (United States)

Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

2014-03-01

The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

Photo-induced absorption spectroscopy on organic, photovoltaically active donor-acceptor heterojunctions; Photoinduzierte Absorptionsspektroskopie an organischen, photovoltaisch aktiven Donor-Akzeptor-Heterouebergaengen

Energy Technology Data Exchange (ETDEWEB)

Schueppel, Rico

2007-07-01

Starting from some general considerations about organic semiconductors first the foundations of molecular crystals, their spectroscopic properties, as well as the mechanisms, on which the exharge-carrier generation is based, are presented. The functionality of the organic solar cells is then explained. The applied experimental techniques are thereafter explained. Special regards gets the photo-induced and transient absorption. Thed the dicyanovinyl-oligothiophene studied in this thesis are presented, whereby the characteristics fitted to the heterojunction with the fullerene C{sub 60} are discussed. Then the photo-induced absorption in this system is presented. In these studies an indirect occupation of the triplet starte of the oligothiophene derivates at the heterojunction with C{sub 60} is observed. The application of the oligothiophene derivates in organic solar cells is thereafter described. Thereby especially the correlation between reached zero voltage and the fitting of the energy levels at the DCVnT:C{sub 60} junction is considered. Furthermore the data of the solar cells are discussed in view of the statements on the charge-carrier separation at the heterojunction with C{sub 60} obtained from the photo-induced absorption.

Technology computer aided design of 29.5% efficient perovskite/interdigitated back contact silicon heterojunction mechanically stacked tandem solar cell for energy-efficient applications

Science.gov (United States)

Pandey, Rahul; Chaujar, Rishu

2017-04-01

A 29.5% efficient perovskite/SiC passivated interdigitated back contact silicon heterojunction (IBC-SiHJ) mechanically stacked tandem solar cell device has been designed and simulated. This is a substantial improvement of 40% and 15%, respectively, compared to the transparent perovskite solar cell (21.1%) and Si solar cell (25.6%) operated individually. The perovskite solar cell has been used as a top subcell, whereas 250- and 25-μm-thick IBC-SiHJ solar cells have been used as bottom subcells. The realistic technology computer aided design analysis has been performed to understand the physical processes in the device and to make reliable predictions of the behavior. The performance of the top subcell has been obtained for different acceptor densities and hole mobility in Spiro-MeOTAD along with the impact of counter electrode work function. To incorporate the effect of material quality, the influence of carrier lifetimes has also been studied for perovskite top and IBC-SiHJ bottom subcells. The optical and electrical behavior of the devices has been obtained for both standalone as well as tandem configuration. Results reported in this study reveal that the proposed four-terminal tandem device may open a new door for cost-effective and energy-efficient applications.

Influence of thermal annealing-induced molecular aggregation on film properties and photovoltaic performance of bulk heterojunction solar cells based on a squaraine dye

Science.gov (United States)

Zhang, Pengpeng; Ling, Zhitian; Chen, Guo; Wei, Bin

2018-04-01

Squaraine (SQ) dyes have been considered as efficient photoactive materials for organic solar cells. In this work, we purposely controlled the molecular aggregation of an SQ dye, 2,4-bis[4-(N,N-dibutylamino)-2-dihydroxyphenyl] SQ (DBSQ-(OH)2) in the DBSQ(OH)2:[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film by using the thermal annealing method, to study the influence of the molecular aggregation on film properties as well as the photovoltaic performance of DBSQ(OH)2:PCBM-based bulk heterojunction (BHJ) solar cells. Our results demonstrate that thermal annealing may change the aggregation behavior of DBSQ(OH)2 in the DBSQ(OH)2:PCBM film, and thus significantly influence the surface morphology, optical and electrical properties of the blend film, as well as the photovoltaic performance of DBSQ(OH)2:PCBM BHJ cells.

Electric field engineering using quantum-size-effect-tuned heterojunctions

KAUST Repository

Adinolfi, V.

2013-07-03

A quantum junction solar cell architecture was recently reported that employs colloidal quantum dots (CQDs) on each side of the p-n junction. This architecture extends the range of design opportunities for CQD photovoltaics, since the bandgap can be tuned across the light-absorbing semiconductor layer via control over CQD size, employing solution-processed, room-temperature fabricated materials. We exploit this feature by designing and demonstrating a field-enhanced heterojunction architecture. We optimize the electric field profile within the solar cell through bandgap engineering, thereby improving carrier collection and achieving an increased open circuit voltage, resulting in a 12% improvement in power conversion efficiency.

Structural determinants in the bulk heterojunction.

Science.gov (United States)

Acocella, Angela; Höfinger, Siegfried; Haunschmid, Ernst; Pop, Sergiu C; Narumi, Tetsu; Yasuoka, Kenji; Yasui, Masato; Zerbetto, Francesco

2018-02-21

Photovoltaics is one of the key areas in renewable energy research with remarkable progress made every year. Here we consider the case of a photoactive material and study its structural composition and the resulting consequences for the fundamental processes driving solar energy conversion. A multiscale approach is used to characterize essential molecular properties of the light-absorbing layer. A selection of bulk-representative pairs of donor/acceptor molecules is extracted from the molecular dynamics simulation of the bulk heterojunction and analyzed at increasing levels of detail. Significantly increased ground state energies together with an array of additional structural characteristics are identified that all point towards an auxiliary role of the material's structural organization in mediating charge-transfer and -separation. Mechanistic studies of the type presented here can provide important insights into fundamental principles governing solar energy conversion in next-generation photovoltaic devices.

Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

Science.gov (United States)

Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

2016-06-01

Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

International Nuclear Information System (INIS)

Hazra, Purnima; Singh, Satyendra Kumar; Jit, Satyabrata

2015-01-01

In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance ( 20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the output current rating is about 130 times larger compared to their planar

Numerical analysis of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells

International Nuclear Information System (INIS)

Lin, Shuo; Li, Xirong; Pan, Huaqing; Chen, Huanting; Li, Xiuyan; Li, Yan; Zhou, Jinrong

2016-01-01

Highlights: • In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS solar cells are studied by numerical analysis. • Performances of In_xGa_1_−_xN/SnS solar cells enhanced with decreasing In content. • The electron barrier leads to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. • GaN/SnS solar cell exhibits the highest efficiency 26.34%. - Abstract: In this work the photovoltaic properties of In_xGa_1_−_xN/SnS and Al_xGa_1_−_xN/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of In_xGa_1_−_xN/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the Al_xGa_1_−_xN/SnS solar cells, there is electron barrier in the Al_xGa_1_−_xN/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of Al_xGa_1_−_xN/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.

Mixed Domains Enhance Charge Generation and Extraction in Bulk-Heterojunction Solar Cells with Small-Molecule Donors

KAUST Repository

Alqahtani, Obaid; Babics, Maxime; Gorenflot, Julien; Savikhin, Victoria; Ferron, Thomas; Balawi, Ahmed H.; Paulke, Andreas; Kan, Zhipeng; Pope, Michael; Clulow, Andrew J.; Wolf, Jannic Sebastian; Burn, Paul L.; Gentle, Ian R.; Neher, Dieter; Toney, Michael F.; Laquai, Fré dé ric; Beaujuge, Pierre; Collins, Brian A.

2018-01-01

The interplay between nanomorphology and efficiency of polymer-fullerene bulk-heterojunction (BHJ) solar cells has been the subject of intense research, but the generality of these concepts for small-molecule (SM) BHJs remains unclear. Here, the relation between performance; charge generation, recombination, and extraction dynamics; and nanomorphology achievable with two SM donors benzo[1,2-b:4,5-b]dithiophene-pyrido[3,4-b]-pyrazine BDT(PPTh), namely SM1 and SM2, differing by their side-chains, are examined as a function of solution additive composition. The results show that the additive 1,8-diiodooctane acts as a plasticizer in the blends, increases domain size, and promotes ordering/crystallinity. Surprisingly, the system with high domain purity (SM1) exhibits both poor exciton harvesting and severe charge trapping, alleviated only slightly with increased crystallinity. In contrast, the system consisting of mixed domains and lower crystallinity (SM2) shows both excellent exciton harvesting and low charge recombination losses. Importantly, the onset of large, pure crystallites in the latter (SM2) system reduces efficiency, pointing to possible differences in the ideal morphologies for SM-based BHJ solar cells compared with polymer-fullerene devices. In polymer-based systems, tie chains between pure polymer crystals establish a continuous charge transport network, whereas SM-based active layers may in some cases require mixed domains that enable both aggregation and charge percolation to the electrodes.

Mixed Domains Enhance Charge Generation and Extraction in Bulk-Heterojunction Solar Cells with Small-Molecule Donors

KAUST Repository

Alqahtani, Obaid

2018-03-25

The interplay between nanomorphology and efficiency of polymer-fullerene bulk-heterojunction (BHJ) solar cells has been the subject of intense research, but the generality of these concepts for small-molecule (SM) BHJs remains unclear. Here, the relation between performance; charge generation, recombination, and extraction dynamics; and nanomorphology achievable with two SM donors benzo[1,2-b:4,5-b]dithiophene-pyrido[3,4-b]-pyrazine BDT(PPTh), namely SM1 and SM2, differing by their side-chains, are examined as a function of solution additive composition. The results show that the additive 1,8-diiodooctane acts as a plasticizer in the blends, increases domain size, and promotes ordering/crystallinity. Surprisingly, the system with high domain purity (SM1) exhibits both poor exciton harvesting and severe charge trapping, alleviated only slightly with increased crystallinity. In contrast, the system consisting of mixed domains and lower crystallinity (SM2) shows both excellent exciton harvesting and low charge recombination losses. Importantly, the onset of large, pure crystallites in the latter (SM2) system reduces efficiency, pointing to possible differences in the ideal morphologies for SM-based BHJ solar cells compared with polymer-fullerene devices. In polymer-based systems, tie chains between pure polymer crystals establish a continuous charge transport network, whereas SM-based active layers may in some cases require mixed domains that enable both aggregation and charge percolation to the electrodes.

Selective observation of photo-induced electric fields inside different material components in bulk-heterojunction organic solar cell

Energy Technology Data Exchange (ETDEWEB)

Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, S3-33 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2014-01-06

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement at two laser wavelengths of 1000 nm and 860 nm, we investigated carrier behavior inside the pentacene and C{sub 60} component of co-deposited pentacene:C{sub 60} bulk-heterojunctions (BHJs) organic solar cells (OSCs). The EFISHG experiments verified the presence of two carrier paths for electrons and holes in BHJs OSCs. That is, two kinds of electric fields pointing in opposite directions are identified as a result of the selectively probing of SHG activation from C{sub 60} and pentacene. Also, under open-circuit conditions, the transient process of the establishment of open-circuit voltage inside the co-deposited layer has been directly probed, in terms of photovoltaic effect. The EFISHG provides an additional promising method to study carrier path of electrons and holes as well as dissociation of excitons in BHJ OSCs.

Cu2O-based solar cells using oxide semiconductors

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu 2 O heterojunction solar cells fabricated using p-type Cu 2 O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu 2 O sheets under various deposition conditions using a pulsed laser deposition method. In Cu 2 O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa 2 O 4 thin-film layer. In most of the Cu 2 O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga 2 O 3 -Al 2 O 3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (V oc ) were obtained by using a relatively small amount of MgO or Al 2 O 3 , e.g., (ZnO) 0.91 –(MgO) 0.09 and (Ga 2 O 3 ) 0.975 –(Al 2 O 3 ) 0.025 , respectively. When Cu 2 O-based heterojunction solar cells were fabricated using Al 2 O 3 –Ga 2 O 3 –MgO–ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high V oc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu 2 O heterojunction solar cells fabricated using Na-doped Cu 2 O (Cu 2 O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a V oc of 0.84 V were obtained in a MgF 2 /AZO/n-(Ga 2 O 3 –Al 2 O 3 )/p-Cu 2 O:Na heterojunction solar cell fabricated using

Cu2O-based solar cells using oxide semiconductors

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

Heterojunction p-Cu2O/ZnO-n solar cell fabricated by spark plasma sintering

Directory of Open Access Journals (Sweden)

Christophe Tenailleau

2017-09-01

Full Text Available Abstract Cuprous oxide and zinc oxide nanoparticles were prepared at room temperature by inorganic polycondensation. X-ray diffraction (XRD analyses show that the oxide phases formed are pure and well crystallized. The spark plasma sintering (SPS technique was successfully used to prepare dense nanoceramics with superimposed layers of Cu2O and ZnO nanopowders. Sintering conditions were optimized to densify the ceramics without phase transformation or diffusion. These ceramics were also characterized by XRD and scanning electron microscopy (SEM, as well as X-ray computed tomography (XCT. SEM and XCT showed that nanograins are preserved after SPS throughout both oxide materials, while a smaller layer (~20 µm of pure oxide phase with larger grains is formed in between Cu2O and ZnO during the sintering process. The SPS technique results in high material density, with the absence of porosity and cracks, homogenous distribution, and a good phase separation. This is the first time that such as-prepared dense oxide-based heterojunction exhibits a photovoltaic effect under illumination opening a new route for preparing solar cells.

Graphitic carbon nitride/Cu2O heterojunctions: Preparation, characterization, and enhanced photocatalytic activity under visible light

International Nuclear Information System (INIS)

Tian, Yanlong; Chang, Binbin; Fu, Jie; Zhou, Baocheng; Liu, Jiyang; Xi, Fengna; Dong, Xiaoping

2014-01-01

As a metal-free semiconductor material, graphitic carbon nitride (C 3 N 4 ), the high recombination rate of photogenerated charges and insufficient sunlight absorption limit its solar-based photocatalytic activity. Here, we reported the heterojunctions of C 3 N 4 –Cu 2 O with a p–n junction structure, which was synthesized by a hydrothermal method. The HR-TEM result revealed an intimate interface between C 3 N 4 and Cu 2 O in the heterojunction, and UV–vis diffuse reflection spectra showed their extended spectral response in the visible region compared with pure C 3 N 4 . These excellent structural and spectral properties, as well as p–n junction structures, endowed the C 3 N 4 –Cu 2 O heterojunctions with enhanced photocatalytic activities. The possible photocatalytic mechanism that photogenerated holes as the mainly oxidant species in photocatalysis was proposed base on the trapping experiments. - Highlights: • A hydrothermal method was used to prepare C3N 4 –Cu 2 O heterojunction. • The resulting heterojunction possesses broader absorption in the visible region. • The material owns a high visible light activity and stability for dye degradation

Bulk Heterojunction versus Diffused Bilayer: The Role of Device Geometry in Solution p-Doped Polymer-Based Solar Cells.

Science.gov (United States)

Loiudice, Anna; Rizzo, Aurora; Biasiucci, Mariano; Gigli, Giuseppe

2012-07-19

We exploit the effect of molecular p-type doping of P3HT in diffused bilayer (DB) polymer solar cells. In this alternative device geometry, the p-doping is accomplished in solution by blending the F4-TCNQ with P3HT. The p-doping both increases the film conductivity and reduces the potential barrier at the interface with the electrode. This results in an excellent power conversion efficiency of 4.02%, which is an improvement of ∼48% over the p-doped standard bulk heterojunction (BHJ) device. Combined VOC-light intensity dependence measurements and Kelvin probe force microscopy reveal that the DB device configuration is particularly advantageous, if compared to the conventional BHJ, because it enables optimization of the donor and acceptor layers independently to minimize the effect of trapping and to fully exploit the improved transport properties.

Highly efficient photocatalytic conversion of solar energy to hydrogen by WO3/BiVO4 core-shell heterojunction nanorods

Science.gov (United States)

Kosar, Sonya; Pihosh, Yuriy; Bekarevich, Raman; Mitsuishi, Kazutaka; Mawatari, Kazuma; Kazoe, Yutaka; Kitamori, Takehiko; Tosa, Masahiro; Tarasov, Alexey B.; Goodilin, Eugene A.; Struk, Yaroslav M.; Kondo, Michio; Turkevych, Ivan

2018-04-01

Photocatalytic splitting of water under solar light has proved itself to be a promising approach toward the utilization of solar energy and the generation of environmentally friendly fuel in a form of hydrogen. In this work, we demonstrate highly efficient solar-to-hydrogen conversion efficiency of 7.7% by photovoltaic-photoelectrochemical (PV-PEC) device based on hybrid MAPbI3 perovskite PV cell and WO3/BiVO4 core-shell nanorods PEC cell tandem that utilizes spectral splitting approach. Although BiVO4 is characterized by intrinsically high recombination rate of photogenerated carriers, this is not an issue for WO3/BiVO4 core-shell nanorods, where highly conductive WO3 cores are combined with extremely thin absorber BiVO4 shell layer. Since the BiVO4 layer is thinner than the characteristic carrier diffusion length, the photogenerated charge carriers are separated at the WO3/BiVO4 heterojunction before their recombination. Also, such architecture provides sufficient optical thickness even for extremely thin BiVO4 layer due to efficient light trapping in the core-shell WO3/BiVO4 nanorods with high aspect ratio. We also demonstrate that the concept of fill factor can be used to compare I-V characteristics of different photoanodes regarding their optimization for PV/PEC tandem devices.

Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Gupta, Vinay, E-mail: drvinaygupta@netscape.net [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India); Department of Physics, University of California, Santa Barbara, California 93106 (United States); Upreti, Tanvi; Chand, Suresh [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India)

2013-12-16

We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl) bis(6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc}) = 5.45 mA/cm{sup 2}, open circuit voltage (V{sub oc}) = 0.727 V, and fill factor (FF) = 51%, and a power conversion efficiency = 2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

Science.gov (United States)

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

High performance nanostructured Silicon heterojunction for water splitting on large scales

KAUST Repository

Bonifazi, Marcella

2017-11-02

In past years the global demand for energy has been increasing steeply, as well as the awareness that new sources of clean energy are essential. Photo-electrochemical devices (PEC) for water splitting applications have stirred great interest, and different approach has been explored to improve the efficiency of these devices and to avoid optical losses at the interfaces with water. These include engineering materials and nanostructuring the device\\'s surfaces [1]-[2]. Despite the promising initial results, there are still many drawbacks that needs to be overcome to reach large scale production with optimized performances [3]. We present a new device that relies on the optimization of the nanostructuring process that exploits suitably disordered surfaces. Additionally, this device could harvest light on both sides to efficiently gain and store the energy to keep the photocatalytic reaction active.

High performance nanostructured Silicon heterojunction for water splitting on large scales

KAUST Repository

Bonifazi, Marcella; Fu, Hui-chun; He, Jr-Hau; Fratalocchi, Andrea

2017-01-01

In past years the global demand for energy has been increasing steeply, as well as the awareness that new sources of clean energy are essential. Photo-electrochemical devices (PEC) for water splitting applications have stirred great interest, and different approach has been explored to improve the efficiency of these devices and to avoid optical losses at the interfaces with water. These include engineering materials and nanostructuring the device's surfaces [1]-[2]. Despite the promising initial results, there are still many drawbacks that needs to be overcome to reach large scale production with optimized performances [3]. We present a new device that relies on the optimization of the nanostructuring process that exploits suitably disordered surfaces. Additionally, this device could harvest light on both sides to efficiently gain and store the energy to keep the photocatalytic reaction active.

Synthesis of nanostructured CuInS{sub 2} thin films and their application in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yu; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Luo, Fazhi [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou (China); Liu, Jun [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Zhejiang University, State Key Lab of Silicon Materials, Hangzhou (China)

2016-03-15

CuInS{sub 2} (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of ''nanosheet array'' and ''flower-like microsphere'' were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS{sub 2} nanostructure competitive as counter electrode in DSSCs. (orig.)

Review of status developments of high-efficiency crystalline silicon solar cells

Science.gov (United States)

Liu, Jingjing; Yao, Yao; Xiao, Shaoqing; Gu, Xiaofeng

2018-03-01

In order to further improve cell efficiency and reduce cost in achieving grid parity, a large number of PV manufacturing companies, universities and research institutes have been devoted to a variety of low-cost and high-efficiency crystalline Si solar cells. In this article, the cell structures, characteristics and efficiency progresses of several types of high-efficiency crystalline Si solar cells that have been in small scale production or are promising in mass production are presented, including passivated emitter rear cell, tunnel oxide passivated contact solar cell, interdigitated back contact cell, heterojunction with intrinsic thin-layer cell, and heterojunction solar cells with interdigitated back contacts. Both the industrialization status and future development trend of high-efficiency crystalline silicon solar cells are also pinpointed.

Morphological Control of the Photoactive Layer in Bulk Heterojunction Organic Solar Cells

KAUST Repository

Su, Yisong

2011-07-23

For its inherent advantages, such as lightweight, low cost, flexibility, and opportunity to cover large surface areas, organic solar cells have attracted more and more attention in both academia and industry. However, the efficiency of organic solar cell is still much lower than silicon solar cells, but steadily rising as it now stands above 8%. The architecture of bulk heterojunction solar cells can improve the performance of organic solar cell a lot, but these improvements are highly dependent on the morphology of photoactive layer. Therefore, by controlling the morphology of photoactive layer, most commonly composed of a P3HT donor polymer and PCBM small molecule, the performance of organic solar cells could be optimized. The use of solvent additives in the solution formulation is particularly interesting, because it is a low cost method of controlling the phase separation of the photoactive layer and possibly removing the need for subsequent thermal and solvent vapor annealing. However, the role of the solvent additive remains not well understood and much debate remains on the mechanisms by which it impacts phase separation. In the first part of this thesis, we investigate the role of the solvent additive on the individual components (solvent, donor and acceptor) of the solution and the photoactive layer both in the bulk solution, during solution-processing and in the post-processing solid state of the film. In the second part of this thesis, we investigate the role of the additive on the blended solution state and resulting thin film phase separation. Finally, we propose a new method of controlling phase separation based on the insight into the role of the solvent additive. In the first part, we used an additive [octandiethiol (OT)] in the solvent to help the aggregation of P3HT in the solution. From the UV-vis experiments, the crystallinity of P3HT in the solutions increased while it decreased in thin films with steady increase of additive concentration. This

Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals.

Science.gov (United States)

Jiménez-Solano, Alberto; Delgado-Sánchez, José-Maria; Calvo, Mauricio E; Miranda-Muñoz, José M; Lozano, Gabriel; Sancho, Diego; Sánchez-Cortezón, Emilio; Míguez, Hernán

2015-12-01

Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one-dimensional photonic crystals and in-plane CuInGaSe 2 (CIGS) solar cells. Highly uniform and wide-area nanostructured multilayers with photonic crystal properties were deposited by a cost-efficient and scalable liquid processing amenable to large-scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in-plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long-term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

Design and realization of transparent solar modules based on luminescent solar concentrators integrating nanostructured photonic crystals

Science.gov (United States)

Jiménez‐Solano, Alberto; Delgado‐Sánchez, José‐Maria; Calvo, Mauricio E.; Miranda‐Muñoz, José M.; Lozano, Gabriel; Sancho, Diego; Sánchez‐Cortezón, Emilio

2015-01-01

Abstract Herein, we present a prototype of a photovoltaic module that combines a luminescent solar concentrator integrating one‐dimensional photonic crystals and in‐plane CuInGaSe2 (CIGS) solar cells. Highly uniform and wide‐area nanostructured multilayers with photonic crystal properties were deposited by a cost‐efficient and scalable liquid processing amenable to large‐scale fabrication. Their role is to both maximize light absorption in the targeted spectral range, determined by the fluorophore employed, and minimize losses caused by emission at angles within the escape cone of the planar concentrator. From a structural perspective, the porous nature of the layers facilitates the integration with the thermoplastic polymers typically used to encapsulate and seal these modules. Judicious design of the module geometry, as well as of the optical properties of the dielectric mirrors employed, allows optimizing light guiding and hence photovoltaic performance while preserving a great deal of transparency. Optimized in‐plane designs like the one herein proposed are of relevance for building integrated photovoltaics, as ease of fabrication, long‐term stability and improved performance are simultaneously achieved. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. PMID:27656090

Nanostructured Semiconductor Materials for Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Carmen Cavallo

2017-01-01

Full Text Available Since O’Regan and Grätzel’s first report in 1991, dye-sensitized solar cells (DSSCs appeared immediately as a promising low-cost photovoltaic technology. In fact, though being far less efficient than conventional silicon-based photovoltaics (being the maximum, lab scale prototype reported efficiency around 13%, the simple design of the device and the absence of the strict and expensive manufacturing processes needed for conventional photovoltaics make them attractive in small-power applications especially in low-light conditions, where they outperform their silicon counterparts. Nanomaterials are at the very heart of DSSC, as the success of its design is due to the use of nanostructures at both the anode and the cathode. In this review, we present the state of the art for both n-type and p-type semiconductors used in the photoelectrodes of DSSCs, showing the evolution of the materials during the 25 years of history of this kind of devices. In the case of p-type semiconductors, also some other energy conversion applications are touched upon.

A hybrid nanostructure of platinum-nanoparticles/graphitic-nanofibers as a three-dimensional counter electrode in dye-sensitized solar cells.

Science.gov (United States)

Hsieh, Chien-Kuo; Tsai, Ming-Chi; Su, Ching-Yuan; Wei, Sung-Yen; Yen, Ming-Yu; Ma, Chen-Chi M; Chen, Fu-Rong; Tsai, Chuen-Horng

2011-11-07

We directly synthesized a platinum-nanoparticles/graphitic-nanofibers (PtNPs/GNFs) hybrid nanostructure on FTO glass. We applied this structure as a three-dimensional counter electrode in dye-sensitized solar cells (DSSCs), and investigated the cells' photoconversion performance. This journal is © The Royal Society of Chemistry 2011

Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

Science.gov (United States)

Pan, Hui

2014-01-01

Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.