WorldWideScience

Sample records for nanoscale spintronic devices

  1. Spintronics in nanoscale devices

    CERN Document Server

    Hedin, Eric R

    2013-01-01

    By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

  2. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  3. Metallic spintronic devices

    CERN Document Server

    Wang, Xiaobin

    2014-01-01

    Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

  4. Neuromorphic computing with nanoscale spintronic oscillators.

    Science.gov (United States)

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

    2017-07-26

    Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

  5. Future perspectives for spintronic devices

    International Nuclear Information System (INIS)

    Hirohata, Atsufumi; Takanashi, Koki

    2014-01-01

    Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly. Studies of spintronics were started after the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer. Within 10 years, this discovery had been implemented into hard disk drives, the most common storage media, followed by recognition through the award of the Nobel Prize for Physics 19 years later. We have never experienced such fast development in any scientific field. Spintronics research is now moving into second-generation spin dynamics and beyond. In this review, we first examine the historical advances in spintronics together with the background physics, and then describe major device applications. (topical review)

  6. Spintronics from materials to devices

    CERN Document Server

    Felser, Claudia

    2013-01-01

    Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and low energy consumption as particularly relevant. This monograph examines the concept of half-metallic compounds perspectives to obtain novel solutions and discusses several oxides such as perovskites, double perovskites and CrO2 as well as Heusler compounds. Such materials can be designed and made

  7. Dynamic Circuit Model for Spintronic Devices

    KAUST Repository

    Alawein, Meshal

    2017-01-09

    In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

  8. Dynamic Circuit Model for Spintronic Devices

    KAUST Repository

    Alawein, Meshal; Fariborzi, Hossein

    2017-01-01

    In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

  9. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  10. Flexible spintronic devices on Kapton

    DEFF Research Database (Denmark)

    Bedoya-Pinto, Amilcar; Donolato, Marco; Gobbi, Marco

    2014-01-01

    Magnetic tunnel junctions and nano-sized domain-wall conduits have been fabricated on the flexible substrate Kapton. Despite the delicate nature of tunneling barriers and zig-zag shaped nanowires, the devices show an outstanding integrity and robustness upon mechanical bending. High values of ben...

  11. Tunable Magnetic Resonance in Microwave Spintronics Devices

    Science.gov (United States)

    Chen, Yunpeng; Fan, Xin; Xie, Yunsong; Zhou, Yang; Wang, Tao; Wilson, Jeffrey D.; Simons, Rainee N.; Chui, Sui-Tat; Xiao, John Q.

    2015-01-01

    Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe based tunable microwave spintronics devices, which is 10X higher than conventional methods.

  12. Oxide materials for spintronic device applications

    Science.gov (United States)

    Prestgard, Megan Campbell

    Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for

  13. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  14. Spintronics

    International Nuclear Information System (INIS)

    Grundler, Dirk

    2003-01-01

    Devices that exploit the spin of the electron promise to revolutionize microelectronics once polarized electrons can be injected efficiently into semiconductors at room temperature. Later this year physicists will be celebrating the centenary of Paul Dirac's birth. One of the most influential scientists of the 20th century, Dirac combined quantum mechanics and special relativity to explain the strange magnetic or 'spin' properties of the electron. What Dirac could not have foreseen, however, is how the spin of the electron could change the field of microelectronics. Indeed, the spin of the electron has attracted renewed interest recently because it promises a wide variety of new devices that combine logic, storage and sensor applications. Moreover, these 'Spintronics' devices might lead to quantum computers and quantum communication based on electronic solid-state devices, thus changing the perspective of information technology in the 21st century. Since the 1970s conventional electronic microprocessors have operated by shuttling packets of electronic charge along ever-smaller semiconductor channels. Although this trend will continue for the next few years, experts predict that silicon technology is beginning to approach fundamental limits. By 2008, for example, the width of the 'gate electrodes' in a silicon microprocessor will be just 45 nano metres across, which will place severe demands on the materials and manufacturing techniques used in the semiconductor industry. Indeed, the cost of implementing a new production line for such devices is predicted to reach $33bn. Although successors to silicon technology have been discussed, most of them rely on a complete set of new materials, new handling and processing techniques, and altered circuit design, among other developments. These new technologies include single-electron transistors and molecular-electronic devices based on organic materials or carbon nanotubes (see Carbon nanotubes roll on Physics World June

  15. Spintronics

    Indian Academy of Sciences (India)

    we will deal in an elementary fashion with the principles of spintronics. Introduction. Spintronics is the branch of science dealing with the ac- tive manipulation of spin degrees of freedom in solid state materials. .... polarized material can be done in many ways. The sim- plest way is to apply a transient magnetic field to a para-.

  16. Nanoscale characterisation of electronic and spintronic nitrides and arsenides

    International Nuclear Information System (INIS)

    Fay, M W; Han, Y; Edmonds, K W; Wang, K; Campion, R P; Gallagher, B L; Foxon, C T; Hilton, K P; Masterton, A; Wallis, D; Balmer, R S; Uren, M J; Martin, T; Brown, P D

    2006-01-01

    The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga 1-x Mn x As epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga 1-x Mn x As epilayers is demonstrated

  17. Spintronic materials and devices based on antiferromagnetic metals

    OpenAIRE

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring i...

  18. PREFACE International Symposium on Spintronic Devices and Commercialization 2010

    Science.gov (United States)

    Du, You-wei; Judy, Jack; Qian, Zhenghong; Wang, Jianping

    2011-01-01

    SSDC logo Preface The International Symposium on Spintronic Devices and Commercialization (ISSDC' 2010) was held in Beijing, China, from 21 to 24 October 2010. The aim of the symposium was to provide an opportunity for international experts, academics, researchers, practitioners and students working in the areas of spintronic theories, spintronic materials, and spintronic devices to exchange information on the R&D and commercialization of spintronic materials and devices. New developments, concepts, future research trends and potential commercialization areas were also discussed. The topics covered by ISSDC' 2010 were: Fundmental Spintronic Theories/Experiments Spin polarization, spin-dependent scattering, spin relaxation, spin manipulation and optimization, as well as other related characterizations and applications, etc. Spintronic Materials Giant magnetoresistance materials, magnetic tunnel junction materials, magnetic semiconductor materials, molecular spintronic materials. Spintronic Devices Sensors, isolators, spin logic devices and magnetic random access memories (MRAMs), microwave devices, spin diodes, spin transistor, spin filters and detectors, spin optoelectronic devices, spin quantum devices, single chip computer, spin molecule and single electron devices. Other Magnetic Materials Soft magnetic materials, hard magnetic materials, magneto-optical materials, magnetostriction materials. Applications of Spintronic Devices Magnetic position/angle/velocity/rotation velocity sensors, magnetic encoders, magnetic compasses, bio-medical magnetic devices and other applications. Future Research Trends and the Commercialization of Spintronic Devices Approximately 85 scientists from almost 10 countries participated in the conference. The conference featured 6 keynote lectures, 8 invited lectures, 12 contributed lectures and about 30 posters. We would like to express our gratitude to all participants for their presentations and discussions, which made the conference

  19. Fiscal 2000 pioneering research on the spintronic device basic technology; 2000 nendo spintronic soshi kiban gijutsu sendo kenkyu hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Researchers specializing in technologies of magnetism or semiconductor were drafted from the industrial, official, and academic circles, who conducted hearings, patent investigations, overseas surveys, and the like, concerning spintronics. Collected in this report are the outline of the research and development of spintronic device technology, its current state and tasks and its importance from social and economic viewpoints, and the strategy that Japan should follow in the research and development of the technology. Important spintronic device technologies now attracting attention are mentioned below. The nonvolatile magnetic memory device MRAM (magnetic random access memory) is supposed to be the device which will enjoy practical application first among like devices. It is expected that the spin conduction device will lead to novel functions when the possibilities of the spin-dependent electric conduction phenomenon are further pursued. It is hoped that the spin optical device will be used as a light isolator, light spin logic device, field induced variable wavelength laser device, spin laser device, high-speed light switch, and so forth. It is necessary to watch the development of a spin-aided quantum computer which is still at the stage of basic study. (NEDO)

  20. Evaluating Graphene as a Channel Material in Spintronic Logic Devices

    Science.gov (United States)

    Anugrah, Yoska

    Spintronics, a class of devices that exploit the spin properties of electrons in addition to the charge properties, promises the possibility for nonvolatile logic and memory devices that operate at low power. Graphene is a material in which the spin orientation of electrons can be conserved over a long distance, which makes it an attractive channel material in spintronics devices. In this dissertation, the properties of graphene that are interesting for spintronics applications are explored. A robust fabrication process is described for graphene spin valves using Al2O3 tunnel tunnel barriers and Co ferromagnetic contacts. Spin transport was characterized in both few-layer exfoliated and single-layer graphene, and spin diffusion lengths and spin relaxation times were extracted using the nonlocal spin valve geometry and Hanle measurements. The effect of input-output asymmetry on the spin transport was investigated. The effect of an applied drift electric field on spin transport was investigated and the spin diffusion length was found to be tunable by a factor of 8X (suppressed to 1.6 microm and enhanced to 13 microm from the intrinsic length of 4.6 microm using electric field of +/-1800 V/cm). A mechanism to induce asymmetry without excess power dissipation is also described which utilizes a double buried-gate structure to tune the Fermi levels on the input and output sides of a graphene spin logic device independently. It was found that different spin scattering mechanisms were at play in the two halves of a small graphene strip. This suggests that the spin properties of graphene are strongly affected by its local environment, e.g. impurities, surface topography, defects. Finally, two-dimensional materials beyond graphene have been explored as spin channels. One such material is phosphorene, which has low spin-orbit coupling and high mobility, and the interface properties of ferromagnets (cobalt and permalloy) with this material were explored. This work could

  1. Spintronic materials and devices based on antiferromagnetic metals

    Directory of Open Access Journals (Sweden)

    Y.Y. Wang

    2017-04-01

    Full Text Available In this paper, we review our recent experimental developments on antiferromagnet (AFM spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.

  2. Optimization of Materials and Interfaces for Spintronic Devices

    Science.gov (United States)

    Clark, Billy

    In recent years' Spintronic devices have drawn a significant amount of research attention. This interest comes in large part from their ability to enable interesting and new technology such as Spin Torque Transfer Random Access Memory or improve existing technology such as High Signal Read Heads for Hard Disk Drives. For the former we worked on optimizing and improving magnetic tunnel junctions by optimizing their thermal stability by using Ta insertion layers in the free layer. We further tried to simplify the design of the MTJ stack by attempting to replace the Co/Pd multilayer with CoPd alloy. In this dissertation, we detail its development and examine the switching characteristics. Lastly we look at a highly spin polarized material, Fe2MnGe, for optimizing Hard Drive Disk read heads.

  3. Nanoscale memory devices

    International Nuclear Information System (INIS)

    Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

    2010-01-01

    This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

  4. The role of ion-implantation in the realization of spintronic devices in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Kalish, Rafi, E-mail: kalish@si-sun1.technion.ac.il [Physics Department and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2012-02-01

    The application of single photons emitted by specific quantum systems is promising for quantum computers, cryptography and for other future nano-applications. These heavily rely on ion implantation both for selective single ion implantations as well as for the introduction of controlled damage with specific properties. Of particular promise is the negatively charged nitrogen-vacancy (NV{sup -}) defect center in diamond. This center has many desirable luminescence properties required for spintronic devices operational at room temperature, including a long relaxation time of the color center, emission of photons in the visible and the fact that it is produced in diamond, a material with outstanding mechanical and optical properties. This center is usually realized by nitrogen and/or vacancy producing ion implantations into diamond which, following annealing, leads to the formation of the desired NV{sup -} center. The single photons emitted by the decay of this center have to be transported to allow their exploitation. This can be best done by realizing very thin wave guides in single crystal diamond with/or without nano-scale cavities in the same diamond in which NV centers are produced. For this, advantage is taken of the unique property of heavily ion-damaged diamond to be converted, following annealing, to etchable graphite. Thus a free standing submicron thick diamond membrane containing the NV center can be obtained. If desirable, specific photonic crystal structures can be realized in them by the use of FIB. The various ion-implantation schemes used to produce NV centers in diamond, free standing diamond membranes, and photonic crystal structures in them are reviewed. The scientific problems and the technological challenges that have to be solved before actual practical realization of diamond based spintronic devices can be produced are discussed.

  5. Spin-polarized transport properties of a pyridinium-based molecular spintronics device

    Science.gov (United States)

    Zhang, J.; Xu, B.; Qin, Z.

    2018-05-01

    By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based "radical-π-radical" molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.

  6. Nanoscale phase-change materials and devices

    International Nuclear Information System (INIS)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-01-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced. (topical review)

  7. Nanoscale phase-change materials and devices

    Science.gov (United States)

    Zheng, Qinghui; Wang, Yuxi; Zhu, Jia

    2017-06-01

    Phase-change materials (PCMs) that can reversibly transit between crystalline and amorphous phases have been widely used for data-storage and other functional devices. As PCMs scale down to nanoscale, the properties and transition procedures can vary, bringing both challenges and opportunities in scalability. This article describes the physical structures, properties and applications of nanoscale phase-change materials and devices. The limitations and performance of scaling properties in phase-change materials and the recent progress and challenges in phase-change devices are presented. At the end, some emerging applications related to phase-change materials are also introduced.

  8. Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

    Science.gov (United States)

    Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek

    2018-04-01

    The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.

  9. Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

    International Nuclear Information System (INIS)

    Kang, S.H.; Lee, K.

    2013-01-01

    A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a dense array of nanometer-scale magnetic tunnel junctions. This emerging field is of growing scientific and engineering interest, owing to its potential to bring disruptive device innovation to the world of electronics. This technology is currently being pursued not only for scalable non-volatile spin-transfer-torque magnetoresistive random access memory, but also for various forms of non-volatile logic (Spin-Logic). This paper reviews recent advances in spintronic IC. Key discoveries and breakthroughs in materials and devices are highlighted in light of the broader perspective of their application in low-energy mobile computing and connectivity systems, which have emerged as leading drivers for the prevailing electronics ecosystem

  10. Hybrid Spintronic-CMOS Spiking Neural Network with On-Chip Learning: Devices, Circuits, and Systems

    Science.gov (United States)

    Sengupta, Abhronil; Banerjee, Aparajita; Roy, Kaushik

    2016-12-01

    Over the past decade, spiking neural networks (SNNs) have emerged as one of the popular architectures to emulate the brain. In SNNs, information is temporally encoded and communication between neurons is accomplished by means of spikes. In such networks, spike-timing-dependent plasticity mechanisms require the online programing of synapses based on the temporal information of spikes transmitted by spiking neurons. In this work, we propose a spintronic synapse with decoupled spike-transmission and programing-current paths. The spintronic synapse consists of a ferromagnet-heavy-metal heterostructure where the programing current through the heavy metal generates spin-orbit torque to modulate the device conductance. Low programing energy and fast programing times demonstrate the efficacy of the proposed device as a nanoelectronic synapse. We perform a simulation study based on an experimentally benchmarked device-simulation framework to demonstrate the interfacing of such spintronic synapses with CMOS neurons and learning circuits operating in the transistor subthreshold region to form a network of spiking neurons that can be utilized for pattern-recognition problems.

  11. Theory of superconducting spintronic SIsFS devices

    International Nuclear Information System (INIS)

    Bakurskiy, S.V.; Klenov, N.V.; Soloviev, I.I.; Kupriyanov, M.Yu.; Bol'ginov, V.V.; Ryazanov, V.V.; Vernik, I.V.; Mukhanov, O.A.; Golubov, A.A.

    2013-01-01

    Full text: Motivated by recent progress in developments of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have high I C R N product in the π-state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0:99Fe0:01-Nb junctions. This work is supported by RFBR No. 12-02-90010-Bel a .

  12. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  13. Remote control of nanoscale devices

    Science.gov (United States)

    Högberg, Björn

    2018-01-01

    Processes that occur at the nanometer scale have a tremendous impact on our daily lives. Sophisticated evolved nanomachines operate in each of our cells; we also, as a society, increasingly rely on synthetic nanodevices for communication and computation. Scientists are still only beginning to master this scale, but, recently, DNA nanotechnology (1)—in particular, DNA origami (2)—has emerged as a powerful tool to build structures precise enough to help us do so. On page 296 of this issue, Kopperger et al. (3) show that they are now also able to control the motion of a DNA origami device from the outside by applying electric fields.

  14. Nanoscale device physics science and engineering fundamentals

    CERN Document Server

    Tiwari, Sandip

    2017-01-01

    Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the inter-actions, and others. These interactions, with the limits placed on size, make not just electronic, but also magnetic, optical and mechanical behavior interesting, important and useful. Connecting these properties to the behavior of devices is the focus of this textbook. Description of the book series: This collection of four textbooks in the Electroscience series span the undergrad...

  15. Fabrication of tunnel junction-based molecular electronics and spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan

    2012-01-01

    Tunnel junction-based molecular devices (TJMDs) are highly promising for realizing futuristic electronics and spintronics devices for advanced logic and memory operations. Under this approach, ∼2.5 nm molecular device elements bridge across the ∼2-nm thick insulator of a tunnel junction along the exposed side edge(s). This paper details the efforts and insights for producing a variety of TJMDs by resolving multiple device fabrication and characterization issues. This study specifically discusses (i) compatibility between tunnel junction test bed and molecular solutions, (ii) optimization of the exposed side edge profile and insulator thickness for enhancing the probability of molecular bridging, (iii) effect of fabrication process-induced mechanical stresses, and (iv) minimizing electrical bias-induced instability after the device fabrication. This research will benefit other researchers interested in producing TJMDs efficiently. TJMD approach offers an open platform to test virtually any combination of magnetic and nonmagnetic electrodes, and promising molecules such as single molecular magnets, porphyrin, DNA, and molecular complexes.

  16. A general circuit model for spintronic devices under electric and magnetic fields

    KAUST Repository

    Alawein, Meshal

    2017-10-25

    In this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport equations which might also neglect certain effects such as thermal fluctuations, spin dissipation in the ferromagnets, and spin precession under magnetic fields, our model incorporates most of the important physics and is based on a time-dependent formulation. An application of our model is shown through simulations of a nonlocal spin-valve under the presence of a magnetic field, where we reproduce experimental results of electrical measurements that demonstrate the phenomena of spin precession and dephasing (“Hanle effect”).

  17. Large resistance change on magnetic tunnel junction based molecular spintronics devices

    Science.gov (United States)

    Tyagi, Pawan; Friebe, Edward

    2018-05-01

    Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

  18. Nanostructured graphene for spintronics

    DEFF Research Database (Denmark)

    Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

    2017-01-01

    Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization, making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag-edged triangular antidots perform essential spintronic functionalities, such as spatial spin splitting or spin...

  19. Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

    Directory of Open Access Journals (Sweden)

    Xuan Li

    2017-12-01

    Full Text Available Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001 out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001/Ag(001 composite buffer layer is selected to improve the (001 orientation of the Fe4N thin film. The N2 partial pressure during sputtering is optimized to promote the formation of Fe4N phase. Moreover, we have measured the ferromagnetic resonance (FMR of the (001 oriented Fe4N thin film using coplanar waveguides and microwave excitation. The resonant fields are tested under different microwave excitation frequencies, and the experimental results match well with the Kittel formula. The Gilbert damping constant of Fe4N is determined to be α = 0.021±0.02. We have also fabricated and characterized the current-perpendicular-to-plane (CPP giant magnetoresistance (GMR device with Fe4N/Ag/Fe sandwich. Inverse giant magnetoresistance is observed in the CPP GMR device, which suggests that the spin polarization of Fe4N and Fe4N/Ag interface is negative.

  20. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  1. Dopant atoms as quantum components in silicon nanoscale devices

    Science.gov (United States)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  2. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  3. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  4. "Magnon Spintronics"

    Science.gov (United States)

    Yu, Haiming; Xiao, Jiang; Pirro, Philipp

    2018-03-01

    We are proud to present a collection of 12 cutting-edge research articles on the emerging field "magnon spintronics" investigating the properties of spin waves or magnons towards their potential applications in low-power-consumption information technologies. Magnons (quasiparticles of spin waves) are collective excitations of magnetizations in a magnetic system. The concept for such excitations was first introduced 1930 by Felix Bloch [1] who described ferromagnetism in a lattice. The field of magnon spintronics [2] or magnonics [3] aims at utilizing magnons to realize information processing and storage. The propagation of spin waves is free of charge transport, hence a successful realization of magnonic devices can innately avoid Joule heating induced energy loss in nowadays micro- or nano-electronic devices. Magnonics has made many progresses in recent years, including the demonstration of magnonic logic devices [4]. Towards the aim to generate magnonic devices, it is an essential step to find materials suitable for conveying spin waves. One outstanding candidate is a ferromagnetic insulator yttrium iron garnet (YIG). It offers an out standing low damping which allows the propagation of spin waves over relatively long distances. Experiments on such a thin YIG film with an out-of-plane magnetization have been performed by Chen et al. [5]. They excited so called forward volume mode spin waves and determined the propagating spin wave properties, such as the group velocities. Lohman et al. [6] has successfully imaged the propagating spin waves using time-resolved MOKE microscopy and show agreement with micromagnetic modellings. For very long time, YIG is the most ideal material for spin waves thanks to its ultra-low damping. However, it remains a major challenge integrate YIG on to Silicon substrate. Magnetic Heusler alloys on the other hand, can be easily grown on Si substrate and also shows reasonably good damping properties, which allow spin waves to propagate

  5. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  6. Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

    Science.gov (United States)

    Dahal, Bishnu R.

    The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

  7. Thermoelectric efficiency of nanoscale devices in the linear regime

    Science.gov (United States)

    Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

    2016-12-01

    We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

  8. Optical Biosensors: A Revolution Towards Quantum Nanoscale Electronics Device Fabrication

    Directory of Open Access Journals (Sweden)

    D. Dey

    2011-01-01

    Full Text Available The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  9. Semiempirical model for nanoscale device simulations

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Petersen, Dan Erik; Smidstrup, Søren

    2010-01-01

    We present a semiempirical model for calculating electron transport in atomic-scale devices. The model is an extension of the extended Hückel method with a self-consistent Hartree potential that models the effect of an external bias and corresponding charge rearrangements in the device. It is also...... possible to include the effect of external gate potentials and continuum dielectric regions in the device. The model is used to study the electron transport through an organic molecule between gold surfaces, and it is demonstrated that the results are in closer agreement with experiments than ab initio...

  10. Organic spintronics

    International Nuclear Information System (INIS)

    Naber, W J M; Faez, S; Wiel, W G van der

    2007-01-01

    We review the emerging field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by ferromagnetic metals, oxides, or inorganic semiconductors. First, the basic concepts of spintronics and organic electronics are addressed, and phenomena which are in particular relevant for organic spintronics are highlighted. Experiments using different organic materials, including carbon nanotubes, organic thin films, self-assembled monolayers and single molecules are then reviewed. Observed magnetoresistance points toward successful spin injection and detection, but spurious magnetoresistance effects can easily be confused with spin accumulation. A few studies report long spin relaxation times and lengths, which forms a promising basis for further research. We conclude with discussing outstanding questions and problems. (topical review)

  11. Status and perspectives of nanoscale device modelling

    DEFF Research Database (Denmark)

    Macucci, M.; Lannaccone, G.; Greer, J.

    2001-01-01

    During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status...

  12. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

    2008-01-01

    Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

  13. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

    2005-01-01

    Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

  14. Antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Martí, Xavier; Wadley, P.; Wunderlich, Joerg

    2016-01-01

    Roč. 11, č. 3 (2016), 231-241 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 38.986, year: 2016

  15. Molecular and nanoscale materials and devices in electronics.

    Science.gov (United States)

    Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

    2004-12-13

    Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

  16. Handbook of spintronics

    CERN Document Server

    Awschalom, David; Nitta, Junsaku

    2016-01-01

    This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and applications.  It comprises a collection of chapters from a large international team of leading researchers across academia and industry, providing readers with an up-to-date and comprehensive review of this dynamic field of research.   The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including the theory of giant magnetoresistance and an introduction to spin quantum computing.  Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrid materials including Heusler compounds, magnetic semiconductors, molecular spintronic materials, carbon nanotubes and graphene.  A separate section describes the various methods used in the char...

  17. Development of Nanoscale Graphitic Devices and The Transport Characterization

    International Nuclear Information System (INIS)

    Gunasekaran, Venugopal

    2011-02-01

    This dissertation describes the development of graphitic based nanoscale devices with its fabrication and transport characterization results. It covers graphite nano-scale stacked-junctions fabricated using focused ion beam (FIB) 3-D etching technique, a single layer graphite layer (graphene) preparation and its electrical transport characterization results and the synthesis and investigation of electrical transport behavior of graphene oxide based thin film devices. The first chapter describes the basic information about the carbon family in detail in which the electronic properties and structure of graphite, graphene and graphene oxide are discussed. In addition, the necessity of developing nanoscale graphitic devices is given. The second chapter explains the experimental techniques used in this research for fabricating nanoscale devices which includes focused ion beam 3-D fabrication procedures, mechanical exfoliation technique and photolithographic methods. In third chapter, we have reported the results on temperature dependence of graphite planar-type structures fabricated along ab-plane. In the fourth and fifth chapters, the fabrication and electrical transport characteristics of large in-plane area graphite planar-type structures (fabricated along ab-plane and c-axis) were discussed and their transport anisotropy properties were investigated briefly. In the sixth chapter, we focused the fabrication of the submicron sized graphite stacked junctions and their electrical transport characterization studies. In which, FIB was used to fabricated the submicron junctions with various in-plane area (with same stack height) are and their transport characteristics were compared. The seventh chapter reports investigation of electrical transport results of nanoscale graphite stacked-junctions in which the temperature dependent transport (R-T) studies, current-voltage measurements for the various in-plane areas and for various stack height samples were analyzed. The

  18. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.; Manchon, Aurelien; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  19. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.

    2018-02-15

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  20. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Friebe, Edward; Baker, Collin

    2015-01-01

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes’ susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond ∼90 °C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies

  1. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  2. Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

    Directory of Open Access Journals (Sweden)

    Mohd Ambri Mohamed, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori and Akihiko Fujiwara

    2008-01-01

    Full Text Available We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.

  3. Spintronics-based computing

    CERN Document Server

    Prenat, Guillaume

    2015-01-01

    This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic, which is widely considered a promising candidate to replace conventional, pure CMOS-based logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content.  The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.  .

  4. Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

    Science.gov (United States)

    Wang, Jian-Ping

    An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

  5. Antiferromagnetic spintronics

    Science.gov (United States)

    Baltz, V.; Manchon, A.; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

  6. Room-temperature spintronic effects in Alq3-based hybrid devices

    NARCIS (Netherlands)

    Dediu, V.; Hueso, L.E.; Bergenti, I; Riminucci, A.; Borgatti, F.; Graziosi, P.; Newby, C.; Casoli, F.; de Jong, Machiel Pieter; Taliani, C.; Zhan, Y.

    2008-01-01

    We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel

  7. Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

    Science.gov (United States)

    Wong, Hei; Iwai, Hiroshi; Liou, J. J.

    2005-05-01

    It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

  8. Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

    International Nuclear Information System (INIS)

    Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

    2011-01-01

    Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

  9. Spintronics: The molecular way

    Science.gov (United States)

    Cornia, Andrea; Seneor, Pierre

    2017-05-01

    Molecular spintronics is an interdisciplinary field at the interface between organic spintronics, molecular magnetism, molecular electronics and quantum computing, which is advancing fast and promises large technological payoffs.

  10. Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Kang, Wang; Zhang, Youguang; Zhao, Weisheng; Wang, Zhaohao; Klein, Jacques-Olivier; Lv, Weifeng

    2016-01-01

    Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore’s law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau–Lifshitz–Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm is rather promising for low-power logic computing. (paper)

  11. Spintronics with multiferroics

    Science.gov (United States)

    Béa, H.; Gajek, M.; Bibes, M.; Barthélémy, A.

    2008-10-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  12. Spintronics with multiferroics

    International Nuclear Information System (INIS)

    Bea, H; Gajek, M; Bibes, M; Barthelemy, A

    2008-01-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO 3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO 3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO 3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO 3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO 3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO 3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  13. Spintronics with multiferroics

    Energy Technology Data Exchange (ETDEWEB)

    Bea, H; Gajek, M; Bibes, M; Barthelemy, A [Unite Mixte de Physique CNRS/Thales, Route departementale 128, F-91767 Palaiseau (France); Universite Paris-Sud, 91405 Orsay (France)], E-mail: agnes.barthelemy@thalesgroup.com

    2008-10-29

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO{sub 3} and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO{sub 3} allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO{sub 3} ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO{sub 3} as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO{sub 3} electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO{sub 3} ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  14. Advances in neuromorphic hardware exploiting emerging nanoscale devices

    CERN Document Server

    2017-01-01

    This book covers all major aspects of cutting-edge research in the field of neuromorphic hardware engineering involving emerging nanoscale devices. Special emphasis is given to leading works in hybrid low-power CMOS-Nanodevice design. The book offers readers a bidirectional (top-down and bottom-up) perspective on designing efficient bio-inspired hardware. At the nanodevice level, it focuses on various flavors of emerging resistive memory (RRAM) technology. At the algorithm level, it addresses optimized implementations of supervised and stochastic learning paradigms such as: spike-time-dependent plasticity (STDP), long-term potentiation (LTP), long-term depression (LTD), extreme learning machines (ELM) and early adoptions of restricted Boltzmann machines (RBM) to name a few. The contributions discuss system-level power/energy/parasitic trade-offs, and complex real-world applications. The book is suited for both advanced researchers and students interested in the field.

  15. Nanoscale strain engineering of graphene and graphene-based devices

    Institute of Scientific and Technical Information of China (English)

    N-C Yeh; C-C Hsu; M L Teague; J-Q Wang; D A Boyd; C-C Chen

    2016-01-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simula-tions and nano-fabrication technology.

  16. Methods and devices for fabricating three-dimensional nanoscale structures

    Science.gov (United States)

    Rogers, John A.; Jeon, Seokwoo; Park, Jangung

    2010-04-27

    The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

  17. Nanoscale Copper and Copper Compounds for Advanced Device Applications

    Science.gov (United States)

    Chen, Lih-Juann

    2016-12-01

    Copper has been in use for at least 10,000 years. Copper alloys, such as bronze and brass, have played important roles in advancing civilization in human history. Bronze artifacts date at least 6500 years. On the other hand, discovery of intriguing properties and new applications in contemporary technology for copper and its compounds, particularly on nanoscale, have continued. In this paper, examples for the applications of Cu and Cu alloys for advanced device applications will be given on Cu metallization in microelectronics devices, Cu nanobats as field emitters, Cu2S nanowire array as high-rate capability and high-capacity cathodes for lithium-ion batteries, Cu-Te nanostructures for field-effect transistor, Cu3Si nanowires as high-performance field emitters and efficient anti-reflective layers, single-crystal Cu(In,Ga)Se2 nanotip arrays for high-efficiency solar cell, multilevel Cu2S resistive memory, superlattice Cu2S-Ag2S heterojunction diodes, and facet-dependent Cu2O diode.

  18. Nanoscale devices based on plasmonic coaxial waveguide resonators

    Science.gov (United States)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  19. A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-06-01

    Full Text Available Organic spintronics is an emerging and potential platform for future electronics and display due to the intriguing properties of organic semiconductors (OSCs. For the past decade, studies have focused on three types of organic spintronic phenomena: (i magnetic field effect (MFE in organic light emitting diodes (OLEDs, where spin mixing between singlet and triplet polaron pairs (PP can be influenced by an external magnetic field leading to organic magnetoresistive effect (OMAR; (ii magnetoresistance (MR in organic spin valves (OSVs, where spin injection, transport, manipulation, and detection have been demonstrated; and (iii magnetoelectroluminescence (MEL bipolar OSVs or spin-OLEDs, where spin polarized electrons and holes are simultaneously injected into the OSC layer, leading to the dependence of electroluminescence intensity on relative magnetization of the electrodes. In this first of two review papers, we present major experimental results on OMAR studies and current understanding of OMAR using several spin dependent processes in organic semiconductors. During the discussion, we highlight some of the outstanding challenges in this promising research field. Finally, we provide an outlook on the future of organic spintronics.

  20. Electronic structure and magnetism of new ilmenite compounds for spintronic devices: FeBO{sub 3} (B = Ti, Hf, Zr, Si, Ge, Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, R.A.P. [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Camilo, A. [Department of Physics, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Lazaro, S.R. de, E-mail: srlazaro@uepg.br [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil)

    2015-11-15

    First-principles calculations were performed in the framework of Density Functional Theory (DFT) within hybrid functional (B3LYP) to study the electronic structure and magnetic properties of new ilmenite FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) materials. In particular, the magnetic exchange interaction between Fe{sup 2+} layers is dependent on the interlayer distance and it can be controlled by ionic radius of B-site cation. Thus, Fe(Ti, Si, Ge)O{sub 3} are antiferromagnetic materials, while Fe(Zr, Hf, Sn)O{sub 3} are ferromagnetic. We also argue that antiferromagnetic materials and FeZrO{sub 3} are convectional semiconductors, whereas FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior, making them promising candidates for spintronic devices. - Highlights: • We study electronic structure and magnetism of new FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) ilmenite materials. • We found that magnetic ordering of Fe-based ilmenite materials can be controlled by size of B-site cation. • Fe(Ti, Zr, Si, Ge)O{sub 3} are convectional semiconductors. • FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior with potential application for spintronic devices.

  1. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  2. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  3. Humidity effects on the electronic transport properties in carbon based nanoscale device

    International Nuclear Information System (INIS)

    He, Jun; Chen, Ke-Qiu

    2012-01-01

    By applying nonequilibrium Green's functions in combination with the density functional theory, we investigate the effect of humidity on the electronic transport properties in carbon based nanoscale device. The results show that different humidity may form varied localized potential barrier, which is a very important factor to affect the stability of electronic transport in the nanoscale system. A mechanism for the humidity effect is suggested. -- Highlights: ► Electronic transport in carbon based nanoscale device. ► Humidity affects the stability of electronic transport. ► Different humidity may form varied localized potential barrier.

  4. Advances in graphene spintronics

    Science.gov (United States)

    van Wees, Bart

    I will give an overview of the status of graphene spintronics, from both scientific as technological perspectives. In the introduction I will show that (single) layer graphene is the ideal host for electronic spins, allowing spin transport by diffusion over distances exceeding 20 micrometers at room temperature. I will show how by the use of carrier drift, induced by charge currents, effective spin relaxation lengths of 90 micrometer can be obtained in graphene encapsulated between boron-nitride layers. This also allows the controlled flow and guiding of spin currents, opening new avenues for spin logic devices based on lateral architectures. By preparing graphene on top of a ferromagnetic insulator (yttrium iron garnet (YIG)) we have shown that we can induce an exchange interaction in the graphene, thus effectively making the graphene magnetic. This allows for new ways to induce and control spin precession for new applications. Finally I will show how, by using two-layer BN tunnel barriers, spins can be injected from a ferromagnet into graphene with a spin polarization which can be tuned continuously from -80% to 40%, using a bias range from -0.3V to 0.3V across the barrier. These unique record values of the spin polarization are not yet understood, but they highlight the potential of Van der Waals stacking of graphene and related 2D materials for spintronics.

  5. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  6. Charge transport in nanoscale vertical organic semiconductor pillar devices

    NARCIS (Netherlands)

    Wilbers, J.G.E.; Xu, B.; Bobbert, P.A.; de Jong, M.P.; van der Wiel, W.G.

    2017-01-01

    We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust

  7. Spintronics Based on Topological Insulators

    Science.gov (United States)

    Fan, Yabin; Wang, Kang L.

    2016-10-01

    Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

  8. Plant virus directed fabrication of nanoscale materials and devices

    Science.gov (United States)

    2015-03-26

    Structural features within the internal and external PVN surfaces are amenable to either chemi- cal or genetic modifications for the display of novel moieties...structures: from nanoboomerangs to tetrapods. Nanoscale 7, 344–355. Eggen, R., Verver, J., Wellink, J., De Jong, A., Goldbach, R., van Kammen, A., 1989...in planta expression and for templates for synthetic biology applica- tions. New Phytol. 200, 16–26. Saunders, K., Sainsbury, F., Lomonossoff, G.P

  9. A Review of Atomic Layer Deposition for Nanoscale Devices

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-12-01

    Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

  10. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    KAUST Repository

    Kumar, Naresh

    2017-01-12

    Novel optoelectronic devices rely on complex nanomaterial systems where the nanoscale morphology and local chemical composition are critical to performance. However, the lack of analytical techniques that can directly probe these structure-property relationships at the nanoscale presents a major obstacle to device development. In this work, we present a novel method for non-destructive, simultaneous mapping of the morphology, chemical composition and photoelectrical properties with <20 nm spatial resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale resolution in all three spatial dimensions. By applying the technique to an organic solar cell device, we show that the inferred surface and subsurface composition distribution correlates strongly with the local photocurrent generation and explains macroscopic device performance. For instance, the direct measurement of fullerene phase purity can distinguish between high purity aggregates that lead to poor performance and lower purity aggregates (fullerene intercalated with polymer) that result in strong photocurrent generation and collection. We show that the reliable determination of the structure-property relationship at the nanoscale can remove ambiguity from macroscopic device data and support the identification of the best routes for device optimisation. The multi-parameter measurement approach demonstrated herein is expected to play a significant role in guiding the rational design of nanomaterial-based optoelectronic devices, by opening a new realm of possibilities for advanced investigation via the combination of nanoscale optical spectroscopy with a whole range of scanning probe microscopy modes.

  11. High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device

    International Nuclear Information System (INIS)

    Bala Kumar, S; Jalil, M B A; Tan, S G; Liang, G-C

    2009-01-01

    We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.

  12. TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

    Science.gov (United States)

    Khizroev, S.; Litvinov, D.

    2004-03-01

    In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

  13. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

    2016-01-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

  14. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

    Science.gov (United States)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

    2013-09-27

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

  15. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

    International Nuclear Information System (INIS)

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-lae; Sheri, Ahmad Muqeem; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Hwang, Hyunsang

    2013-01-01

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption. In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal–oxide–semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers. (paper)

  16. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    Energy Technology Data Exchange (ETDEWEB)

    Tomasello, R. [Department of Computer Science, Modeling, Electronics and System Science, University of Calabria, Rende (CS) (Italy); Carpentieri, M., E-mail: m.carpentieri@poliba.it [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)

    2013-12-16

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

  17. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    International Nuclear Information System (INIS)

    Tomasello, R.; Carpentieri, M.; Finocchio, G.

    2013-01-01

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed

  18. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Directory of Open Access Journals (Sweden)

    Sukru Burc Eryilmaz

    2014-07-01

    Full Text Available Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

  19. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.

    2017-05-30

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  20. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.; Sinova, J.; Manchon, Aurelien; Marti, X.; Wunderlich, J.; Felser, C.

    2017-01-01

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  1. Nano-Scale Devices for Frequency-Based Magnetic Biosensing

    Science.gov (United States)

    2017-01-31

    show the basic measurement setup (the field is applied perpendicular to the disk plane). A radiofrequency signal is injected across the disk (disks...shown in Fig. 7(a). A spectrum analyser (S.A.) (or a high frequency oscilloscope) is used to measure the radiofrequency STO output signal with Fig...crystals and, via electrical measurements , in magnetic-vortex-containing, isolated micro- and nano-devices. Via micromagnetic simulations, we have largely

  2. Quantum transport in semiconductor nanostructures and nanoscale devices

    International Nuclear Information System (INIS)

    Zhen-Li, Ji.

    1991-09-01

    Only a decade ago the study and fabrication of electron devices whose smallest features were just under 1 micro represented the forefront of the field. Today that position has advanced an order of magnitude to 100 nanometers. Quantum effects are unavoidable in devices with dimensions smaller than 100 nanometers. A variety of quantum effects have been discovered over the years, such as tunneling, resonant tunneling, weak and strong localization, and the quantum Hall effect. Since 1985, experiments on nanostructures (dimension < 100 nm) have revealed a number of new effects such as the Aharanov-Bohm effect, conductance fluctuations, non-local effects and the quantized resistance of point contacts. For nanostructures at low temperature, these phenomena clearly show that electron transport is influenced by wave interference effects similar to those well-known in microwave and optical networks. New device concepts now being proposed and demonstrated are based on these wave properties. This thesis discusses our study of electron transport in nanostructures. All of the quantum phenomena that we address here are essentially one-electron phenomena, although many-body effects will sometimes play a more significant role in the electronic properties of small structures. Most of the experimental observations to date are particularly well explained, at least qualitatively, in terms of the simple one-particle picture. (au)

  3. Ballistic calculation of nonequilibrium Green's function in nanoscale devices using finite element method

    International Nuclear Information System (INIS)

    Kurniawan, O; Bai, P; Li, E

    2009-01-01

    A ballistic calculation of a full quantum mechanical system is presented to study 2D nanoscale devices. The simulation uses the nonequilibrium Green's function (NEGF) approach to calculate the transport properties of the devices. While most available software uses the finite difference discretization technique, our work opts to formulate the NEGF calculation using the finite element method (FEM). In calculating a ballistic device, the FEM gives some advantages. In the FEM, the floating boundary condition for ballistic devices is satisfied naturally. This paper gives a detailed finite element formulation of the NEGF calculation applied to a double-gate MOSFET device with a channel length of 10 nm and a body thickness of 3 nm. The potential, electron density, Fermi functions integrated over the transverse energy, local density of states and the transmission coefficient of the device have been studied. We found that the transmission coefficient is significantly affected by the top of the barrier between the source and the channel, which in turn depends on the gate control. This supports the claim that ballistic devices can be modelled by the transport properties at the top of the barrier. Hence, the full quantum mechanical calculation presented here confirms the theory of ballistic transport in nanoscale devices.

  4. Organic-based magnon spintronics

    Science.gov (United States)

    Liu, Haoliang; Zhang, Chuang; Malissa, Hans; Groesbeck, Matthew; Kavand, Marzieh; McLaughlin, Ryan; Jamali, Shirin; Hao, Jingjun; Sun, Dali; Davidson, Royce A.; Wojcik, Leonard; Miller, Joel S.; Boehme, Christoph; Vardeny, Z. Valy

    2018-03-01

    Magnonics concepts utilize spin-wave quanta (magnons) for information transmission, processing and storage. To convert information carried by magnons into an electric signal promises compatibility of magnonic devices with conventional electronic devices, that is, magnon spintronics1. Magnons in inorganic materials have been studied widely with respect to their generation2,3, transport4,5 and detection6. In contrast, resonant spin waves in the room-temperature organic-based ferrimagnet vanadium tetracyanoethylene (V(TCNE)x (x ≈ 2)), were detected only recently7. Herein we report room-temperature coherent magnon generation, transport and detection in films and devices based on V(TCNE)x using three different techniques, which include broadband ferromagnetic resonance (FMR), Brillouin light scattering (BLS) and spin pumping into a Pt adjacent layer. V(TCNE)x can be grown as neat films on a large variety of substrates, and it exhibits extremely low Gilbert damping comparable to that in yttrium iron garnet. Our studies establish an alternative use for organic-based magnets, which, because of their synthetic versatility, may substantially enrich the field of magnon spintronics.

  5. Redox control of molecular motion in switchable artificial nanoscale devices.

    Science.gov (United States)

    Credi, Alberto; Semeraro, Monica; Silvi, Serena; Venturi, Margherita

    2011-03-15

    The design, synthesis, and operation of molecular-scale systems that exhibit controllable motions of their component parts is a topic of great interest in nanoscience and a fascinating challenge of nanotechnology. The development of this kind of species constitutes the premise to the construction of molecular machines and motors, which in a not-too-distant future could find applications in fields such as materials science, information technology, energy conversion, diagnostics, and medicine. In the past 25 years the development of supramolecular chemistry has enabled the construction of an interesting variety of artificial molecular machines. These devices operate via electronic and molecular rearrangements and, like the macroscopic counterparts, they need energy to work as well as signals to communicate with the operator. Here we outline the design principles at the basis of redox switching of molecular motion in artificial nanodevices. Redox processes, chemically, electrically, or photochemically induced, can indeed supply the energy to bring about molecular motions. Moreover, in the case of electrically and photochemically induced processes, electrochemical and photochemical techniques can be used to read the state of the system, and thus to control and monitor the operation of the device. Some selected examples are also reported to describe the most representative achievements in this research area.

  6. Perspectives of antiferromagnetic spintronics

    Science.gov (United States)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronic applications owing to their advantageous properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions, which results in zero net magnetization. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad perspective on antiferromagnetic spintronics. In particular, the manipulation and detection of antiferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  7. Perspectives of antiferromagnetic spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronics applications owing to their interesting properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions which results in zero net magneti- zation. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad per- spective on antiferromagnetic spintronics. In particular, the manipulation and detection of anitferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  8. Nanomagnetism and spintronics

    CERN Document Server

    Shinjo, Teruya

    2014-01-01

    The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR). Spintronics is a cutting-edge area in the field of magnetism that studies the interplay of magnetism and transport phenomena, demonstrating how electrons not only have charge but also spin. This second edition provides the background to understand this novel physical phenomeno

  9. Prospect for antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Martí, Xavier; Fina, I.; Jungwirth, Tomáš

    2015-01-01

    Roč. 51, č. 4 (2015), s. 2900104 ISSN 0018-9464 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

  10. Molecular spintronics using single-molecule magnets

    Science.gov (United States)

    Bogani, Lapo; Wernsdorfer, Wolfgang

    2008-03-01

    A revolution in electronics is in view, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. A fundamental link between these two fields can be established using molecular magnetic materials and, in particular, single-molecule magnets. Here, we review the first progress in the resulting field, molecular spintronics, which will enable the manipulation of spin and charges in electronic devices containing one or more molecules. We discuss the advantages over more conventional materials, and the potential applications in information storage and processing. We also outline current challenges in the field, and propose convenient schemes to overcome them.

  11. Single atom spintronics

    International Nuclear Information System (INIS)

    Sullivan, M. R.; Armstrong, J. N.; Hua, S. Z.; Chopra, H. D.

    2005-01-01

    Full text: Single atom spintronics (SASS) represents the ultimate physical limit in device miniaturization. SASS is characterized by ballistic electron transport, and is a fertile ground for exploring new phenomena. In addition to the 'stationary' (field independent) scattering centers that have a small and fixed contribution to total transmission probability of electron waves, domain walls constitute an additional and enhanced source of scattering in these magnetic quantum point contacts (QPCs), the latter being both field and spin-dependent. Through the measurement of complete hysteresis loops as a function of quantized conductance, we present definitive evidence of enhanced backscattering of electron waves by atomically sharp domain walls in QPCs formed between microfabricated thin films [1]. Since domain walls move in a magnetic field, the magnitude of spin-dependent scattering changes as the QPC is cycled along its hysteresis loop. For example, as shown in the inset in Fig. 1, from zero towards saturation in a given field direction, the resistance varies as the wall is being swept away, whereas the resistance is constant upon returning from saturation towards zero, since in this segment of the hysteresis loop no domain wall is present across the contact. The observed spin-valve like behavior is realized by control over wall width and shape anisotropy. This behavior also unmistakably sets itself apart from any mechanical artifacts; additionally, measurements made on single atom contacts provide an artifact-free environment [2]. Intuitively, it is simpler to organize the observed BMR data according to all possible transitions between different conductance plateaus, as shown by the dotted line in Fig. 1; the solid circles show experimental data for Co, which follows the predicted scheme. Requisite elements for the observation of the effect will be discussed in detail along with a review of state of research in this field. Practically, the challenge lies in making

  12. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  13. Concepts of antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Gomonay, O.; Jungwirth, Tomáš; Sinova, Jairo

    2017-01-01

    Roč. 11, č. 4 (2017), 1-8, č. článku 1700022. ISSN 1862-6254 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.032, year: 2016

  14. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  15. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer; Ortiz Pauyac, Christian; Savero, Williams; RojasSanchez, J. Carlos; Schuhl, A.

    2017-01-01

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  16. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer

    2017-03-14

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  17. Quantum computing and spintronics

    International Nuclear Information System (INIS)

    Kantser, V.

    2007-01-01

    Tentative to build a computer, which can operate according to the quantum laws, has leaded to concept of quantum computing algorithms and hardware. In this review we highlight recent developments which point the way to quantum computing on the basis solid state nanostructures after some general considerations concerning quantum information science and introducing a set of basic requirements for any quantum computer proposal. One of the major direction of research on the way to quantum computing is to exploit the spin (in addition to the orbital) degree of freedom of the electron, giving birth to the field of spintronics. We address some semiconductor approach based on spin orbit coupling in semiconductor nanostructures. (authors)

  18. The non-equilibrium Green's function method for nanoscale device simulation

    CERN Document Server

    Pourfath, Mahdi

    2014-01-01

    For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energie...

  19. Micro- and nanoscale devices for the investigation of epigenetics and chromatin dynamics

    Science.gov (United States)

    Aguilar, Carlos A.; Craighead, Harold G.

    2013-10-01

    Deoxyribonucleic acid (DNA) is the blueprint on which life is based and transmitted, but the way in which chromatin -- a dynamic complex of nucleic acids and proteins -- is packaged and behaves in the cellular nucleus has only begun to be investigated. Epigenetic modifications sit 'on top of' the genome and affect how DNA is compacted into chromatin and transcribed into ribonucleic acid (RNA). The packaging and modifications around the genome have been shown to exert significant influence on cellular behaviour and, in turn, human development and disease. However, conventional techniques for studying epigenetic or conformational modifications of chromosomes have inherent limitations and, therefore, new methods based on micro- and nanoscale devices have been sought. Here, we review the development of these devices and explore their use in the study of DNA modifications, chromatin modifications and higher-order chromatin structures.

  20. Synthesis and characterization of transition-metal-doped zinc oxide nanocrystals for spintronics

    Science.gov (United States)

    Wang, Xuefeng

    Spintronics (spin transport electr onics), in which both spin and charge of carriers are utilized for information processing, is believed to challenge the current microelectronics and to become the next-generation electronics. Nanostructured spintronic materials and their synthetic methodologies are of paramount importance for manufacturing future nanoscale spintronic devices. This thesis aims at studying synthesis, characterization, and magnetism of transition-metal-doped zinc oxide (ZnO) nanocrystals---a diluted magnetic semiconductor (DMS)---for potential applications in future nano-spintronics. A simple bottom-up-based synthetic strategy named a solvothermal technique is introduced as the primary synthetic approach and its crystal growth mechanism is scrutinized. N-type cobalt-doped ZnO-based DMS nanocrystals are employed as a model system, and characterized by a broad spectrum of advanced microscopic and spectroscopic techniques. It is found that the self-orientation growth mechanism, imperfect oriented attachment, is intimately correlated with the high-temperature ferromagnetism via defects. The influence of processing on the magnetic properties, such as compositional variations, reaction conditions, and post-growth treatment, is also studied. In this way, an in-depth understanding of processing-structure-property interrelationships and origins of magnetism in DMS nanocrystals are obtained in light of the theoretical framework of a spin-split impurity band model. In addition, a nanoscale spinodal decomposition phase model is also briefly discussed. Following the similar synthetic route, copper- and manganese-doped ZnO nanocrystals have been synthesized and characterized. They both show high-temperature ferromagnetism in line with the aforementioned theoretical model(s). Moreover, they display interesting exchange biasing phenomena at low temperatures, revealing the complexity of magnetic phases therein. The crystal growth strategy demonstrated in this work

  1. Spintronics of antiferromagnetic systems

    International Nuclear Information System (INIS)

    Gomonaj, E.V.; Loktev, V.M.

    2014-01-01

    Spintronics of antiferromagnetics is a new field that has developed in a fascinating research topic in physics of magnetism. Antiferromagnetics, like ferromagnetic materials experience the influence of spin-polarized current, even though they show no macroscopic magnetization. The mechanism of this phenomenon is related to spin-dependent interaction between free and localized electrons-sd-exchange. Due to the peculiarities of antiferromagnetic materials (complicated magnetic structure, essential role of the exchange interactions, lack of macroscopic magnetization) spintronics of antiferromagnets appeals to new theoretical and experimental approaches. The purpose of this review is to systemize and summarize the recent progress in this field. We start with a short introduction into the structure and dynamics of antiferromagnets and proceed with discussion of different microscopic and phenomenological theories for description of current-induced phenomena in ferro-/antiferromagnetic heterostructures. We also consider the problems of the reverse influence of antiferromagnetic ordering on current, and effectiveness of the fully antiferromagnetic spin valve. In addition, we shortly review and interpret the available experimental results.

  2. Novel plasmonic probes and smart superhydrophobic devices, New tools for forthcoming spectroscopies at the nanoscale

    KAUST Repository

    Giugni, Andrea; Torre, Bruno; Allione, Marco; Gentile, Francesco T.; Candeloro, Patrizio; Coluccio, Maria Laura; Perozziello, Gerardo; Limongi, Tania; Marini, Monica; Raimondo, Raffaella; Tirinato, Luca; Francardi, Marco; Das, Gobind; Proietti Zaccaria, Remo; Falqui, Andrea; Di Fabrizio, Enzo M.

    2014-01-01

    In this work we review novel strategies and new physical effects to achieve compositional and structural recognition at single molecule level. This chapter is divided in two main parts. The first one introduces the strategies currently adopted to investigate matter at few molecules level. Exploiting the capability of surface plasmon polaritons to deliver optical excitation at nanoscale, we introduce a technique relying on a new transport phenomenon with chemical sensitivity and nanometer spatial resolution. The second part describes how micro and nanostructured superhydrofobic textures can concentrate and localize a small number of molecules into a well-defined region, even when only an extremely diluted solution is available. Several applications of these devices as micro- and nano-systems for high-resolution imaging techniques, cell cultures and tissue engineering applications are also discussed.

  3. Novel plasmonic probes and smart superhydrophobic devices, New tools for forthcoming spectroscopies at the nanoscale

    KAUST Repository

    Giugni, Andrea

    2014-08-11

    In this work we review novel strategies and new physical effects to achieve compositional and structural recognition at single molecule level. This chapter is divided in two main parts. The first one introduces the strategies currently adopted to investigate matter at few molecules level. Exploiting the capability of surface plasmon polaritons to deliver optical excitation at nanoscale, we introduce a technique relying on a new transport phenomenon with chemical sensitivity and nanometer spatial resolution. The second part describes how micro and nanostructured superhydrofobic textures can concentrate and localize a small number of molecules into a well-defined region, even when only an extremely diluted solution is available. Several applications of these devices as micro- and nano-systems for high-resolution imaging techniques, cell cultures and tissue engineering applications are also discussed.

  4. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

    2012-01-01

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

  5. Preparation and characterization of highly L21-ordered full-Heusler alloy Co2FeAl0.5Si0.5 thin films for spintronics device applications

    International Nuclear Information System (INIS)

    Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro

    2008-01-01

    We report the investigation of structure and magnetic properties of full-Heusler alloy Co 2 FeAl 0.5 Si 0.5 (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2 1 ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications

  6. Nano Superconducting Quantum Interference device: A powerful tool for nanoscale investigations

    Energy Technology Data Exchange (ETDEWEB)

    Granata, Carmine, E-mail: carmine.granata@cnr.it; Vettoliere, Antonio

    2016-02-19

    The magnetic sensing at nanoscale level is a promising and interesting research topic of nanoscience. Indeed, magnetic imaging is a powerful tool for probing biological, chemical and physical systems. The study of small spin cluster, like magnetic molecules and nanoparticles, single electron, cold atom clouds, is one of the most stimulating challenges of applied and basic research of the next years. In particular, the magnetic nanoparticle investigation plays a fundamental role for the modern material science and its relative technological applications like ferrofluids, magnetic refrigeration and biomedical applications, including drug delivery, hyper-thermia cancer treatment and magnetic resonance imaging contrast-agent. Actually, one of the most ambitious goals of the high sensitivity magnetometry is the detection of elementary magnetic moment or spin. In this framework, several efforts have been devoted to the development of a high sensitivity magnetic nanosensor pushing sensing capability to the individual spin level. Among the different magnetic sensors, Superconducting QUantum Interference Devices (SQUIDs) exhibit an ultra high sensitivity and are widely employed in numerous applications. Basically, a SQUID consists of a superconducting ring (sensitive area) interrupted by two Josephson junctions. In the recent years, it has been proved that the magnetic response of nano-objects can be effectively measured by using a SQUID with a very small sensitive area (nanoSQUID). In fact, the sensor noise, expressed in terms of the elementary magnetic moment (spin or Bohr magneton), is linearly dependent on the SQUID loop side length. For this reason, SQUIDs have been progressively miniaturized in order to improve the sensitivity up to few spin per unit of bandwidth. With respect to other techniques, nanoSQUIDs offer the advantage of direct measurement of magnetization changes in small spin systems. In this review, we focus on nanoSQUIDs and its applications. In

  7. Summer School on Spintronics

    CERN Document Server

    Wolf, Stuart; Idzerda, Yves

    2003-01-01

    Stuart Wolf This book originated as a series of lectures that were given as part of a Summer School on Spintronics in the end of August, 1998 at Lake Tahoe, Nevada. It has taken some time to get these lectures in a form suitable for this book and so the process has been an iterative one to provide current information on the topics that are covered. There are some topics that have developed in the intervening years and we have tried to at least alert the readers to them in the Introduction where a rather complete set of references is provided to the current state of the art. The field of magnetism, once thought to be dead or dying, has seen a remarkable rebirth in the last decade and promises to get even more important as we enter the new millennium. This rebirth is due to some very new insight into how the spin degree of freedom of both electrons and nucleons can play a role in a new type of electronics that utilizes the spin in addition to or in place of the charge. For this new field to mature and prosper, ...

  8. Introduction to spintronics

    CERN Document Server

    Bandyopadhyay, Supriyo

    2008-01-01

    The Early History of Spin Spin The Bohr Planetary Model and Space Quantization The Birth of "Spin" The Stern-Gerlach Experiment The Advent of Spintronics The Quantum Mechanics of Spin Pauli Spin Matrices The Pauli Equation and Spinors More on the Pauli Equation Extending the Pauli Equation - the Dirac Equation The Time Independent Dirac Equation Appendix The Bloch Sphere The Spinor and the "Qubit" The Bloch Sphere Concept Evolution of a Spinor Spin-1/2 Particle in a Constant Magnetic Field: Larmor Precession Preparing to Derive the Rabi Formula The Rabi Formula The Density Matrix The Density Matrix Concept: Case of a Pure State Properties of the Density Matrix Pure Versus Mixed State Concept of the Bloch Ball Time Evolution of the Density Matrix: Case of Mixed State The Relaxation Times T1 and T2 and the Bloch Equations Spin Orbit Interaction Spin Orbit Interaction in a Solid Magneto-Electric Sub-Bands in Quantum Confined Structures in the Presence of Spin-Orbit Interaction Dispersion Relations of Spin Resolv...

  9. Study of quantum noise in nanoscale devices via the de Broglie-Bohm formulation

    International Nuclear Information System (INIS)

    Oriols, X.

    2005-01-01

    Full text: The experimental current measured in quantum-based devices fluctuates around average values, even at static conditions. Such current fluctuations are a consequence of the wave-particle duality. Roughly speaking, the undulatory nature of electrons (Schroedinger equation) controls the average current, while the particle like (discrete) nature of electrons determines the fluctuations. Such randomness in the electron flux of mesoscopic systems is known as quantum noise. The de Broglie-Bohm (dBB) interpretation of the quantum theory provides an excellent framework to study quantum noise because it describes phase-coherent phenomena in terms of well-defined quantum trajectories. This theory was initiated by de Broglie in 1926 and fully clarified by Bohm in 1952. In this conference we will present our quantum transport formalism, based on the dBB theory, to study fluctuations in mesoscopic systems. First, we show the excellent agreement between our noise results and those obtained by other approaches for simple tunnelling system. In addition, we will show how our quantum noise approach can directly include the non-trivial many-particle Coulomb interaction among electrons, via the instantaneous self-consistent solution of the Poisson and the Schroedinger equations. As a test, we study standard resonant tunnelling diodes for double and triple barrier. The current fluctuations obtained with dBB theory are in complete agreement with experimental results. We will also present noise results for time-dependent scenarios driven by very high frequencies (few THz), which are comparable to the inverse of the electron transit time in nanoscale devices. Under such conditions, the tunnelling phenomenology is clearly enriched leading to experimental evidences for the dBB theory. (author)

  10. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    International Nuclear Information System (INIS)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin

    2011-01-01

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  11. Perspective: Ultrafast magnetism and THz spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Walowski, Jakob; Münzenberg, Markus [Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, 17489 Greifswald (Germany)

    2016-10-14

    This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

  12. Perspective: Ultrafast magnetism and THz spintronics

    International Nuclear Information System (INIS)

    Walowski, Jakob; Münzenberg, Markus

    2016-01-01

    This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

  13. Simultaneous topographical, electrical and optical microscopy of optoelectronic devices at the nanoscale

    KAUST Repository

    Kumar, Naresh; Zoladek-Lemanczyk, Alina; Guilbert, Anne A. Y.; Su, Weitao; Tuladhar, Sachetan M.; Kirchartz, Thomas; Schroeder, Bob C.; McCulloch, Iain; Nelson, Jenny; Roy, Debdulal; Castro, Fernando A.

    2017-01-01

    resolution by combining plasmonic optical signal enhancement with electrical-mode scanning probe microscopy. We demonstrate that this combined approach offers subsurface sensitivity that can be exploited to provide molecular information with a nanoscale

  14. Pseudo-One-Dimensional Magnonic Crystals for High-Frequency Nanoscale Devices

    Science.gov (United States)

    Banerjee, Chandrima; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

    2017-07-01

    The synthetic magnonic crystals (i.e., periodic composites consisting of different magnetic materials) form one fascinating class of emerging research field, which aims to command the process and flow of information by means of spin waves, such as in magnonic waveguides. One of the intriguing features of magnonic crystals is the presence and tunability of band gaps in the spin-wave spectrum, where the high attenuation of the frequency bands can be utilized for frequency-dependent control on the spin waves. However, to find a feasible way of band tuning in terms of a realistic integrated device is still a challenge. Here, we introduce an array of asymmetric saw-tooth-shaped width-modulated nanoscale ferromagnetic waveguides forming a pseudo-one-dimensional magnonic crystal. The frequency dispersion of collective modes measured by the Brillouin light-scattering technique is compared with the band diagram obtained by numerically solving the eigenvalue problem derived from the linearized Landau-Lifshitz magnetic torque equation. We find that the magnonic band-gap width, position, and the slope of dispersion curves are controllable by changing the angle between the spin-wave propagation channel and the magnetic field. The calculated profiles of the dynamic magnetization reveal that the corrugation at the lateral boundary of the waveguide effectively engineers the edge modes, which forms the basis of the interactive control in magnonic circuits. The results represent a prospective direction towards managing the internal field distribution as well as the dispersion properties, which find potential applications in dynamic spin-wave filters and magnonic waveguides in the gigahertz frequency range.

  15. Radiation engineered multi-functional nanogels as nanoscale building blocks of useful biomedical devices

    International Nuclear Information System (INIS)

    Dispenza, C.

    2011-01-01

    Complete text of publication follows. Nanogels, or small particles formed by physically or chemically crosslinked polymer networks, represent a niche in the development of 'smart' nanoparticles for drug delivery and diagnostics. They offer unique advantages over other systems, including a large and flexible surface for multivalent bio-conjugation; an internal 3D aqueous environment for incorporation and protection of (bio)molecular drugs; the possibility to entrap active metal or mineral cores for imaging or phototherapeutic purposes; stimuli-responsiveness to achieve temporal and/or site control of the release function and biocompatibility. Moreover, conformability and flexibility make these nanoparticles able to penetrate through small pores and channels through shape modification. Major synthetic strategies for the preparation of nanogels belong to either micro-fabrication methodologies (photolithography, microfluidic, micromoulding) or to self-assembly approaches that exploit ionic, hydrophobic or covalent interactions. When dimensional control has been achieved through the recourse to 'soft templates', such as the internal aqueous phase droplets of inverse microemulsions, the use of surfactants, initiators and catalysts often require complex purification procedures. On the other hand, micro-fabrication methods, such as nanomoulding, are limited by the need of costly equipments. The availability of inexpensive and robust preparation methodologies is at the basis of the development of effective nanogel-based theragnostic devices. High energy radiation processing already demonstrated its potential for the production of nanogels in the late 90's, owing to the pioneeristic work of Rosiak and collaborators, but since no adequate efforts have been spent in developing a viable and robust technology to produce multi-functional nanogels for the benefit of several different nanotechnology application fields, such as sensing, medicine and multiple others. The design rules

  16. Special Heusler compounds for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Balke, B.

    2007-07-01

    This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co{sub 2}Mn{sub 1-x}Fe{sub x}Si with the Fe concentration ranging from x=0 to 1 are reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co{sub 2}Mn{sub 1-x}Fe{sub x}Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co{sub 2}FeAl{sub 1-x}Si{sub x} with varying Si concentration are reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x=0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors is reported. It is shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers

  17. Structural, optical and morphological properties of Ga1-xMnxAs thin films deposited by magnetron sputtering for spintronic device applications

    International Nuclear Information System (INIS)

    Bernal, M.E.; Dussan, A.; Mesa, F.

    2012-01-01

    In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (E g ), absorption coefficient (α), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.

  18. Integration of spintronic interface for nanomagnetic arrays

    Directory of Open Access Journals (Sweden)

    Andrew Lyle

    2011-12-01

    Full Text Available An experimental demonstration utilizing a spintronic input/output (I/O interface for arrays of closely spaced nanomagnets is presented. The free layers of magnetic tunnel junctions (MTJs form dipole coupled nanomagnet arrays which can be applied to different contexts including Magnetic Quantum Cellular Automata (MQCA for logic applications and self-biased devices for field sensing applications. Dipole coupled nanomagnet arrays demonstrate adaptability to a variety of contexts due to the ability for tuning of magnetic response. Spintronics allows individual nanomagnets to be manipulated with spin transfer torque and monitored with magnetoresistance. This facilitates measurement of the magnetic coupling which is important for (yet to be demonstrated data propagation reliability studies. In addition, the same magnetic coupling can be tuned to reduce coercivity for field sensing. Dipole coupled nanomagnet arrays have the potential to be thousands of times more energy efficient than CMOS technology for logic applications, and they also have the potential to form multi-axis field sensors.

  19. Graphene-based spintronic components

    OpenAIRE

    Zeng, Minggang; Shen, Lei; Su, Haibin; Zhou, Miao; Zhang, Chun; Feng, Yuanping

    2010-01-01

    A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transpor...

  20. Bipolar spintronics: from spin injection to spin-controlled logic

    International Nuclear Information System (INIS)

    Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

    2007-01-01

    An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

  1. NASA GSFC Strategic Nanotechnology Interests: Symposium on High-Rate Nanoscale Printing for Devices and Structures

    Science.gov (United States)

    Ericsson, Aprille J.

    2014-01-01

    The seminars invitees include representatives from industry, nonprofit research facility and universities. The presentation provides an overview of the NASAGSFC locations, technical capabilities and applied nanotechnology interests. Initially presented are advances by the broader technological communities on current miniaturized multiscale advanced manufacturing and 3D printing products on the micro and macro scale. Briefly assessed is the potential of moving toward the nanoscale for possible space flight applications and challenges. Lastly, highlighted are GSFCs current successes in nano-technology developments and targeted future applications.

  2. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  3. Spin-chemistry concepts for spintronics scientists

    Directory of Open Access Journals (Sweden)

    Konstantin L. Ivanov

    2017-07-01

    Full Text Available Spin chemistry and spintronics developed independently and with different terminology. Until now, the interaction between the two fields has been very limited. In this review, we compile the two “languages” in an effort to enhance communication. We expect that knowledge of spin chemistry will accelerate progress in spintronics.

  4. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser

    2012-11-21

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Nanoscale film formation of ferritin and its application to biomemory device

    International Nuclear Information System (INIS)

    Kim, Sang-Uk; Lee, Taek; Lee, Jin-Ho; Yagati, Ajay Kumar; Min, Junhong; Choi, Jeong-Woo

    2009-01-01

    A redox protein, ferritin is used as a functional constituent of the developed biomemory device. The concept of molecular device mainly depends on the solidification of biomolecules of interest and on the realization of properties of molecule immobilized on a selected substrate. Here, we immobilized the biomolecule, ferritin protein on gold substrate using an organic linker 11-mercaptoundecanoic acid (11-MUA). The immobilization of the protein on the gold substrate was confirmed by surface plasmon spectroscopy, Raman spectroscopy, and atomic force microscopy (AFM). The basic two memory functions, reading and writing of the developed biomemory device, were investigated by open-circuit potential amperometry (OCPA) using the redox property of the biomolecule of interest. The surface topography investigation by scanning tunneling microscopy (STM) shows that the robustness of the ferritin-based biomemory device was validated by the repeated electrochemical performance. These results show the developed biomemory device as a step towards the protein-based nanobiochip.

  6. Towards nanoscale magnetic memory elements : fabrication and properties of sub - 100 nm magnetic tunnel junctions

    NARCIS (Netherlands)

    Fabrie, C.G.C.H.M.

    2008-01-01

    The rapidly growing field of spintronics has recently attracted much attention. Spintronics is electronics in which the spin degree of freedom has been added to conventional chargebased electronic devices. A magnetic tunnel junction (MTJ) is an example of a spintronic device. MTJs consist of two

  7. Nanoscale surface modifications to control capillary flow characteristics in PMMA microfluidic devices

    Directory of Open Access Journals (Sweden)

    Mukhopadhyay Subhadeep

    2011-01-01

    Full Text Available Abstract Polymethylmethacrylate (PMMA microfluidic devices have been fabricated using a hot embossing technique to incorporate micro-pillar features on the bottom wall of the device which when combined with either a plasma treatment or the coating of a diamond-like carbon (DLC film presents a range of surface modification profiles. Experimental results presented in detail the surface modifications in the form of distinct changes in the static water contact angle across a range from 44.3 to 81.2 when compared to pristine PMMA surfaces. Additionally, capillary flow of water (dyed to aid visualization through the microfluidic devices was recorded and analyzed to provide comparison data between filling time of a microfluidic chamber and surface modification characteristics, including the effects of surface energy and surface roughness on the microfluidic flow. We have experimentally demonstrated that fluid flow and thus filling time for the microfluidic device was significantly faster for the device with surface modifications that resulted in a lower static contact angle, and also that the incorporation of micro-pillars into a fluidic device increases the filling time when compared to comparative devices.

  8. Laser direct writing of micro- and nano-scale medical devices

    Science.gov (United States)

    Gittard, Shaun D; Narayan, Roger J

    2010-01-01

    Laser-based direct writing of materials has undergone significant development in recent years. The ability to modify a variety of materials at small length scales and using short production times provides laser direct writing with unique capabilities for fabrication of medical devices. In many laser-based rapid prototyping methods, microscale and submicroscale structuring of materials is controlled by computer-generated models. Various laser-based direct write methods, including selective laser sintering/melting, laser machining, matrix-assisted pulsed-laser evaporation direct write, stereolithography and two-photon polymerization, are described. Their use in fabrication of microstructured and nanostructured medical devices is discussed. Laser direct writing may be used for processing a wide variety of advanced medical devices, including patient-specific prostheses, drug delivery devices, biosensors, stents and tissue-engineering scaffolds. PMID:20420557

  9. Nanoscale architectural tuning of parylene patch devices to control therapeutic release rates

    International Nuclear Information System (INIS)

    Pierstorff, Erik; Lam, Robert; Ho, Dean

    2008-01-01

    The advent of therapeutic functionalized implant coatings has significantly impacted the medical device field by enabling prolonged device functionality for enhanced patient treatment. Incorporation of drug release from a stable, biocompatible surface is instrumental in decreasing systemic application of toxic therapeutics and increasing the lifespan of implants by the incorporation of antibiotics and anti-inflammatories. In this study, we have developed a parylene C-based device for controlled release of Doxorubicin, an anti-cancer chemotherapy and definitive read-out for preserved drug functionality, and further characterized the parylene deposition condition-dependent tunability of drug release. Drug release is controlled by the deposition of a layer of 20-200 nm thick parylene over the drug layer. This places a porous layer above the Doxorubicin, limiting drug elution based on drug accessibility to solvent and the solvent used. An increase in the thickness of the porous top layer prolongs the elution of active drug from the device from, in the conditions tested, the order of 10 min to the order of 2 d in water and from the order of 10 min to no elution in PBS. Thus, the controlled release of an anti-cancer therapeutic has been achieved via scalably fabricated, parylene C-encapsulated drug delivery devices.

  10. Multi-parameter geometrical scaledown study for energy optimization of MTJ and related spintronics nanodevices

    Science.gov (United States)

    Farhat, I. A. H.; Alpha, C.; Gale, E.; Atia, D. Y.; Stein, A.; Isakovic, A. F.

    The scaledown of magnetic tunnel junctions (MTJ) and related nanoscale spintronics devices poses unique challenges for energy optimization of their performance. We demonstrate the dependence of the switching current on the scaledown variable, while considering the influence of geometric parameters of MTJ, such as the free layer thickness, tfree, lateral size of the MTJ, w, and the anisotropy parameter of the MTJ. At the same time, we point out which values of the saturation magnetization, Ms, and anisotropy field, Hk, can lead to lowering the switching current and overall decrease of the energy needed to operate an MTJ. It is demonstrated that scaledown via decreasing the lateral size of the MTJ, while allowing some other parameters to be unconstrained, can improve energy performance by a measurable factor, shown to be the function of both geometric and physical parameters above. Given the complex interdependencies among both families of parameters, we developed a particle swarm optimization (PSO) algorithm that can simultaneously lower energy of operation and the switching current density. Results we obtained in scaledown study and via PSO optimization are compared to experimental results. Support by Mubadala-SRC 2012-VJ-2335 is acknowledged, as are staff at Cornell-CNF and BNL-CFN.

  11. Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

    Science.gov (United States)

    Sano, Nobuyuki

    2011-03-01

    It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

  12. Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

    Science.gov (United States)

    Shima, Hisashi; Nakano, Takashi; Akinaga, Hiro

    2010-05-01

    The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 °C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

  13. On the accuracy of current TCAD hot carrier injection models in nanoscale devices

    Science.gov (United States)

    Zaka, Alban; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, Raphaël; Rideau, Denis; Garetto, Davide; Dornel, Erwan; Singer, Julien; Pananakakis, Georges; Tavernier, Clément; Jaouen, Hervé

    2010-12-01

    In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model - FM [1], the Lucky Electron Model - LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation - SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.

  14. Micro-/nanoscale multi-field coupling in nonlinear photonic devices

    Science.gov (United States)

    Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

    2017-08-01

    The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

  15. Transparent conductors based on microscale/nanoscale materials for high performance devices

    Science.gov (United States)

    Gao, Tongchuan

    Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short

  16. Nanoscale structure, dynamics and power conversion efficiency correlations in small molecule and oligomer-based photovoltaic devices

    Science.gov (United States)

    Szarko, Jodi M.; Guo, Jianchang; Rolczynski, Brian S.; Chen, Lin X.

    2011-01-01

    Photovoltaic functions in organic materials are intimately connected to interfacial morphologies of molecular packing in films on the nanometer scale and molecular levels. This review will focus on current studies on correlations of nanoscale morphologies in organic photovoltaic (OPV) materials with fundamental processes relevant to photovoltaic functions, such as light harvesting, exciton splitting, exciton diffusion, and charge separation (CS) and diffusion. Small molecule photovoltaic materials will be discussed here. The donor and acceptor materials in small molecule OPV devices can be fabricated in vacuum-deposited, multilayer, crystalline thin films, or spin-coated together to form blended bulk heterojunction (BHJ) films. These two methods result in very different morphologies of the solar cell active layers. There is still a formidable debate regarding which morphology is favored for OPV optimization. The morphology of the conducting films has been systematically altered; using variations of the techniques above, the whole spectrum of film qualities can be fabricated. It is possible to form a highly crystalline material, one which is completely amorphous, or an intermediate morphology. In this review, we will summarize the past key findings that have driven organic solar cell research and the current state-of-the-art of small molecule and conducting oligomer materials. We will also discuss the merits and drawbacks of these devices. Finally, we will highlight some works that directly compare the spectra and morphology of systematically elongated oligothiophene derivatives and compare these oligomers to their polymer counterparts. We hope this review will shed some new light on the morphology differences of these two systems. PMID:22110870

  17. Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

    International Nuclear Information System (INIS)

    Lee, Jun-Ha; Lee, Hoong-Joo

    2005-01-01

    We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

  18. Recent Advance in Organic Spintronics and Magnetic Field Effect

    Science.gov (United States)

    Valy Vardeny, Z.

    2013-03-01

    In this talk several important advances in the field of Organic Spintronics and magnetic field effect (MFE) of organic films and optoelectronic devices that have occurred during the past two years from the Utah group will be surveyed and discussed. (i) Organic Spintronics: We demonstrated spin organic light emitting diode (spin-OLED) using two FM injecting electrodes, where the electroluminescence depends on the mutual orientation of the electrode magnetization directions. This development has opened up research studies into organic spin-valves (OSV) in the space-charge limited current regime. (ii) Magnetic field effect: We demonstrated that the photoinduced absorption spectrum in organic films (where current is not involved) show pronounced MFE. This unravels the underlying mechanism of the MFE in organic devices, to be more in agreement with the field of MFE in Biochemistry. (iii) Spin effects in organic optoelectronic devices: We demonstrated that certain spin 1/2 radical additives to donor-acceptor blends substantially enhance the power conversion efficiency of organic photovoltaic (OPV) solar cells. This effect shows that studies of spin response and MFE in OPV devices are promising. In collaboration with T. Nguyen, E. Ehrenfreund, B. Gautam, Y. Zhang and T. Basel. Supported by the DOE grant 04ER46109 ; NSF Grant # DMR-1104495 and MSF-MRSEC program DMR-1121252 [2,3].

  19. Using mathematical models to understand the effect of nanoscale roughness on protein adsorption for improving medical devices

    Directory of Open Access Journals (Sweden)

    Ercan B

    2013-09-01

    Full Text Available Batur Ercan,1 Dongwoo Khang,2 Joseph Carpenter,3 Thomas J Webster1 1Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 2School of Materials Science and Engineering and Center for PRC and RIGET, Gyeongsang National University, Jinju, South Korea; 3School of Medicine, Stanford University, Stanford, CA, USA Abstract: Surface roughness and energy significantly influence protein adsorption on to biomaterials, which, in turn, controls select cellular adhesion to determine the success and longevity of an implant. To understand these relationships at a fundamental level, a model was originally proposed by Khang et al to correlate nanoscale surface properties (specifically, nanoscale roughness and energy to protein adsorption, which explained the greater cellular responses on nanostructured surfaces commonly reported in the literature today. To test this model for different surfaces from what was previously used to develop that model, in this study we synthesized highly ordered poly(lactic-co-glycolic acid surfaces of identical chemistry but altered nanoscale surface roughness and energy using poly(dimethylsiloxane molds of polystyrene beads. Fibronectin and collagen type IV adsorption studies showed a linear adsorption behavior as the surface nanoroughness increased. This supported the general trends observed by Khang et al. However, when fitting such data to the mathematical model established by Khang et al, a strong correlation did not result. Thus, this study demonstrated that the equation proposed by Khang et al to predict protein adsorption should be modified to accommodate for additional nanoscale surface property contributions (ie, surface charge to make the model more accurate. In summary, results from this study provided an important step in developing future mathematical models that can correlate surface properties (such as nanoscale roughness and surface energy to initial protein adsorption events important to

  20. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    Science.gov (United States)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  1. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  2. On the path toward organic spintronics

    NARCIS (Netherlands)

    Moodera, J.S.; Koopmans, B.; Oppeneer, P.M.

    2014-01-01

    Organic materials provide a unique platform for exploiting the spin of the electron—a field dubbed organic spintronics. Originally, this was mostly motivated by the notion that because of weak spin-orbit coupling, due to the small mass elements in organics and small hyperfine field coupling, organic

  3. Comment on The Rise of Semiconductor Spintronics

    OpenAIRE

    Korenev, Vladimir L.

    2009-01-01

    I argue that most of the key experiments that have born semiconductor spintronics were done and published earlier than the papers cited in the Nature Physics, 4 S20 (2008) milestone article (http://www.nature.com/milestones/spin, milestone 23).

  4. Carbon nanotubes for coherent spintronics

    DEFF Research Database (Denmark)

    Kuemmeth, Ferdinand; Churchill, H O H; Herring, P K

    2010-01-01

    Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual......, electrically-gated carbon nanotubes, and present experimental efforts to understand their electronic and nuclear spin degrees of freedom, which in the future may enable quantum applications....

  5. Nanoscale Electrochemical Sensing and Processing in Microreactors

    NARCIS (Netherlands)

    Odijk, Mathieu; van den Berg, Albert

    2018-01-01

    In this review, we summarize recent advances in nanoscale electrochemistry, including the use of nanoparticles, carbon nanomaterials, and nanowires. Exciting developments are reported for nanoscale redox cycling devices, which can chemically amplify signal readout. We also discuss promising

  6. Simulation of a spintronic transistor: A study of its performance

    International Nuclear Information System (INIS)

    Pela, R.R.; Teles, L.K.

    2009-01-01

    We study theoretically the magnetic bipolar transistor, and compare its performance with common bipolar transistor. We present not only the simulation results for the characteristic curves, but also other relevant parameters related with its performance, such as: the current amplification factor, the open-loop gain, the hybrid parameters and the cutoff frequency. We noted that the spin-charge coupling introduces new phenomena that enrich the functionality characteristics of the magnetic bipolar transistor. Among other things, it has an adjustable band structure, which may be modified during the device operation; it exhibits the already known spin-voltaic effect. On the other hand, we observed that it is necessary a large g-factor to analyze the influence of the field B over the transistor. Nevertheless, we consider the magnetic bipolar transistor as a promising device for spintronic applications

  7. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  8. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  9. Nanospintronics: when spintronics meets single electron physics

    International Nuclear Information System (INIS)

    Seneor, Pierre; Bernand-Mantel, Anne; Petroff, Frederic

    2007-01-01

    As spintronics goes nano, new phenomena are predicted resulting from the interplay between spin dependent transport and single electron physics. The long term goal of manipulating spins one by one would open a promising path to quantum computing. Towards this end, there is an ever-growing effort to connect spin tanks (i.e. ferromagnetic leads) to smaller and smaller objects in order to study spintronics in reduced dimensions. As the dimensions are reduced, spin dependent transport is predicted to interplay with quantum and/or single electron charging effects. We review experiments and theories on the interplay between Coulomb blockade and spin properties (namely magneto-Coulomb effects) in structures where a single nano-object is connected to ferromagnetic leads. We then discuss briefly future directions in the emerging field of nanospintronics towards quantum dots, carbon nanotubes and single molecule magnets

  10. LSMO - growing opportunities by PLD and applications in spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M; Caricato, A P; Maruccio, G; Martino, M, E-mail: maura.cesaria@le.infn.it [Physics Department, University of Salento, Via Arnesano, 73100, Lecce (Italy)

    2011-04-01

    Ferromagnetic materials exhibiting at room temperature combination of good conductivity, magnetic and opto-electronic properties are needed for the development of functional spin-devices. Mixed-valence LSMO is an optimal source of fully spin-polarized carriers and shows a rich physics of magnetic phases and transport mechanisms. Many factors, such as growth temperature, oxygen stoichiometry, temperature-dependent oxygen desorption rate, structural matching between the growing film and substrate, film thickness, and defects, influence the LSMO properties. Stabilization of ferromagnetic and conductive behaviours is linked to structural order. Therefore a growth approach allowing congruent deposition of complex materials under controlled, reproducible and tunable conditions is strongly needed. In this respect pulsed laser deposition reveals a well-suited choice. This review aims to give an overview on LSMO thin film properties, deposition and applications, especially in the emerging organic spintronics.

  11. Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier

    Directory of Open Access Journals (Sweden)

    Somaieh Ahmadi

    2012-03-01

    Full Text Available Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices.

  12. Materials for spintronic: Room temperature ferromagnetism in Zn-Mn-O interfaces

    International Nuclear Information System (INIS)

    Quesada, A.; Garcia, M.A.; Crespo, P.; Hernando, A.

    2006-01-01

    In this paper we study the room temperature ferromagnetism reported on Mn-doped ZnO and ascribed to spin polarization of conduction electrons. We experimentally show that the ferromagnetic behaviour is associated to the coexistence of Mn 3+ and Mn +4 in MnO 2 grains where diffusion of Zn promotes the Mn 4+→ Mn 3+ reduction. Potential uses of this material in spintronic devices are analysed

  13. Improved Understanding of Space Radiation Effects on Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Future NASA space exploration missions will use nanometer-scale electronic technologies which call for a shift in how radiation effects in such devices and materials...

  14. Spintronics and thermoelectrics in exfoliated and epitaxial graphene

    NARCIS (Netherlands)

    van den Berg, Jan Jasper

    2016-01-01

    This thesis is about two subjects: graphene spintronics and graphene thermoelectrics. Spintronics is about the creation and manipulation of spin currents. These are electrical currents in which we can control the spin orientation (up or down) of the conduction electrons. The second subject,

  15. Topological insulator materials and nanostructures for future electronics, spintronics and energy conversion

    International Nuclear Information System (INIS)

    Kantser, Valeriu

    2011-01-01

    Two fundamental electrons attributes in materials and nanostructures - charge and spin - determine their electronic properties. The processing of information in conventional electronic devices is based only on the charge of the electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors and insulators are the basic materials that constitute the components of electronic devices, and these have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals, magnetic semiconductors, dilute magnetic semiconductors and magnetic insulators are the materials that will form the basis for spintronic devices. Materials with topological band structure attributes and having a zero-energy band gap surface states are a special class of these materials that exhibit some fascinating and superior electronic properties compared to conventional materials allowing to combine both charge and spin functionalities. This article reviews a range of topological insulator materials and nanostructures with tunable surface states, focusing on nanolayered and nanowire like structures. These materials and nanostructures all have intriguing physical properties and numerous potential practical applications in spintronics, electronics, optics and sensors.

  16. New approaches for first-principles modelling of inelastic transport in nanoscale semiconductor devices with thousands of atoms

    DEFF Research Database (Denmark)

    Gunst, Tue; Brandbyge, Mads; Palsgaard, Mattias Lau Nøhr

    2017-01-01

    is in both methods calculated in a post-processing step to a self consistent DFT calculation. The first method is based on first order perturbation theory in the EPC self-energy within the Lowest Order Expansion (LOE) approximation. The method requires calculation of the first-principles EPC in the device......We present two different methods which both enable large-scale first-principles device simulations including electron-phonon coupling (EPC). The methods are based on Density Functional Theory and Nonequilibrium Greens Functions (DFT- NEGF) calculations of electron transport. The inelastic current...

  17. A method to design high SNR nanoscale magnetic sensors using an array of tunnelling magneto-resistance (TMR) devices

    International Nuclear Information System (INIS)

    Gomez, P; Litvinov, D; Khizroev, S

    2007-01-01

    This paper presents a systematic method to design and calculate tunnelling magneto-resistance (TMR) sensors with high signal-to-noise ratio (SNR). The sensing module consists of four TMR devices arranged in a Wheatstone-bridge configuration. Closed-form equations were obtained to calculate TMR sensor current, array output voltage, magneto-resistance ratio, overall noise (thermal and shot) and SNR for a given bandwidth. Using this technique we were able to maximize the SNR by tuning the many parameters of the TMR devices. Typical SNR values are in excess of 45 dB

  18. Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

    KAUST Repository

    Hou, Zhipeng; Zhang, Qiang; Xu, Guizhou; Gong, Chen; Ding, Bei; Wang, Yue; Li, Hang; Liu, Enke; Xu, Feng; Zhang, Hongwei; Yao, Yuan; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2018-01-01

    Nanoscale topologically nontrivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of a single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step toward the application of skyrmion-based spintronic devices.

  19. Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

    KAUST Repository

    Hou, Zhipeng

    2018-01-04

    Nanoscale topologically nontrivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of a single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step toward the application of skyrmion-based spintronic devices.

  20. Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

    Science.gov (United States)

    Chatterjee, Rohit

    In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

  1. Nanoscale technology in biological systems

    CERN Document Server

    Greco, Ralph S; Smith, R Lane

    2004-01-01

    Reviewing recent accomplishments in the field of nanobiology Nanoscale Technology in Biological Systems introduces the application of nanoscale matrices to human biology. It focuses on the applications of nanotechnology fabrication to biomedical devices and discusses new physical methods for cell isolation and manipulation and intracellular communication at the molecular level. It also explores the application of nanobiology to cardiovascular diseases, oncology, transplantation, and a range of related disciplines. This book build a strong background in nanotechnology and nanobiology ideal for

  2. Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bainsla, Lakhan, E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in; Suresh, K. G., E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in [Magnetic Materials Lab, Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2016-09-15

    Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (T{sub C}) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X{sub 2}YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L2{sub 1} structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX′YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A special class of HMF materials identified recently is known as spin gapless semiconductors (SGS). The difference in this case, compared with HMFs, is that the density of states for one spin band is just zero at the Fermi level, while the other has a gap as in the case of HMFs. Some of the reported SGS materials belong to EQHAs family. This review is dedicated to almost all reported materials belonging to EQHAs family. The electronic structure and hence the physical properties of Heusler alloys strongly depend on the degree of structural order and distribution of the atoms in the crystal lattice. A variety of experimental techniques has been used to probe the structural parameters and degree of order in these alloys. Their magnetic properties have been investigated using the conventional methods, while the spin polarization has been probed by point contact Andreev reflection technique. The experimentally obtained values of saturation magnetization are

  3. Multi-parameter optimization of a nanomagnetic system for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Morales Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Zubieta Rico, Pablo F. [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Vieira, Vítor R. [Centro de Física das Interacções Fundamentais (CFIF), Instituto Superior Técnico, Universidade Técnica de Lisboa, Avenida Rovisco Pais, 1049-001 Lisbon (Portugal)

    2014-11-15

    Magnetic properties of nano-particles feature many interesting physical phenomena that are essentially important for the creation of a new generation of spin-electronic devices. The magnetic stability of the nano-particles can be improved by formation of ordered particle arrays, which should be optimized over several parameters. Here we report successful optimization regarding inter-particle distance and applied field frequency allowing to obtain about three-times reduction of coercivity of a particle array compared to that of a single particle, which opens new perspectives for development of new spintronic devices.

  4. Multi-parameter optimization of a nanomagnetic system for spintronic applications

    International Nuclear Information System (INIS)

    Morales Meza, Mishel; Zubieta Rico, Pablo F.; Horley, Paul P.; Sukhov, Alexander; Vieira, Vítor R.

    2014-01-01

    Magnetic properties of nano-particles feature many interesting physical phenomena that are essentially important for the creation of a new generation of spin-electronic devices. The magnetic stability of the nano-particles can be improved by formation of ordered particle arrays, which should be optimized over several parameters. Here we report successful optimization regarding inter-particle distance and applied field frequency allowing to obtain about three-times reduction of coercivity of a particle array compared to that of a single particle, which opens new perspectives for development of new spintronic devices

  5. Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

    Directory of Open Access Journals (Sweden)

    N. M. Miskovsky

    2012-01-01

    Full Text Available We present a new and viable method for optical rectification. This approach has been demonstrated both theoretically and experimentally and is the basis fot the development of devices to rectify radiation through the visible. This technique for rectification is based not on conventional material or temperature asymmetry as used in MIM (metal/insulator/metal or Schottky diodes, but on a purely sharp geometric property of the antenna. This sharp “tip” or edge with a collector anode constitutes a tunnel junction. In these devices the rectenna (consisting of the antenna and the tunnel junction acts as the absorber of the incident radiation and the rectifier. Using current nanofabrication techniques and the selective atomic layer deposition (ALD process, junctions of 1 nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum. To assess the viability of our approach, we review the development of nanoantenna structures and tunnel junctions capable of operating in the visible region. In addition, we review the detailed process of rectification and present methodologies for analysis of diode data. Finally, we present operational designs for an optical rectenna and its fabrication and discuss outstanding problems and future work.

  6. Integrated Spintronic Platforms for Biomolecular Recognition Detection

    Science.gov (United States)

    Martins, V. C.; Cardoso, F. A.; Loureiro, J.; Mercier, M.; Germano, J.; Cardoso, S.; Ferreira, R.; Fonseca, L. P.; Sousa, L.; Piedade, M. S.; Freitas, P. P.

    2008-06-01

    This paper covers recent developments in magnetoresistive based biochip platforms fabricated at INESC-MN, and their application to the detection and quantification of pathogenic waterborn microorganisms in water samples for human consumption. Such platforms are intended to give response to the increasing concern related to microbial contaminated water sources. The presented results concern the development of biological active DNA chips and protein chips and the demonstration of the detection capability of the present platforms. Two platforms are described, one including spintronic sensors only (spin-valve based or magnetic tunnel junction based), and the other, a fully scalable platform where each probe site consists of a MTJ in series with a thin film diode (TFD). Two microfluidic systems are described, for cell separation and concentration, and finally, the read out and control integrated electronics are described, allowing the realization of bioassays with a portable point of care unit. The present platforms already allow the detection of complementary biomolecular target recognition with 1 pM concentration.

  7. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  8. From Spintronics to CFD/ContractForDifferences

    Science.gov (United States)

    Maksoed, W. H.

    2015-11-01

    Involve the CFD/Computational Fluid Dynamics & HCCI/Homogeneous Charge Compression Ignition - Marcine Frackowiak, dissertation, 2009, for CFD/Contract For Differences accompanied by ``One Man's Crusade to Exonerate Hydrogen for Hindenburg Disaster'' of Addison BAIN, APS News, v. 9, n.7 (July 2000) concludes ``ignition of the blaze'' are responsible to those May, 1937 Accidents. Spintronics their selves include active control & manipulation of spin degree of freedom ever denotes: the nano-obelisk of scanning electron microscopy of galliumnitride/GaN nanostructures-Yong-Hon Cho et al.:``Novel Photonic Device using core-shell nanostructures'', SPIE-newsroom,10.1117/2.1201503.005864. Herewith commercial activated carbon/C can be imaged directly using abberation-corrected transmission electron microscopy[PJF Harris et al.: ``Imaging the Atomic Structures of activated C'', J. Phys. Condens. Matt, 20 (2008) in fig b & c- images networks of hexagonal rings can be clearly be seen depicts equal etchings of 340 px Akhenaten, Nefertiti & their childrens. Incredible acknowledgments to Minister of Education & Culture RI 1998-1999 HE. Mr. Prof. Ir. WIRANTO ARISMUNANDAR, MSME.

  9. Halbach Effect at the Nanoscale from Chiral Spin Textures.

    Science.gov (United States)

    Marioni, Miguel A; Penedo, Marcos; Baćani, Mirko; Schwenk, Johannes; Hug, Hans J

    2018-04-11

    Mallinson's idea that some spin textures in planar magnetic structures could produce an enhancement of the magnetic flux on one side of the plane at the expense of the other gave rise to permanent magnet configurations known as Halbach magnet arrays. Applications range from wiggler magnets in particle accelerators and free electron lasers to motors and magnetic levitation trains, but exploiting Halbach arrays in micro- or nanoscale spintronics devices requires solving the problem of fabrication and field metrology below a 100 μm size. In this work, we show that a Halbach configuration of moments can be obtained over areas as small as 1 μm × 1 μm in sputtered thin films with Néel-type domain walls of unique domain wall chirality, and we measure their stray field at a controlled probe-sample distance of 12.0 ± 0.5 nm. Because here chirality is determined by the interfacial Dyzaloshinkii-Moriya interaction, the field attenuation and amplification is an intrinsic property of this film, allowing for flexibility of design based on an appropriate definition of magnetic domains. Skyrmions (magnetic fields and mapping of the spin structure shows they funnel the field toward one specific side of the film given by the sign of the Dyzaloshinkii-Moriya interaction parameter D.

  10. Spintronic microfluidic platform for biomedical and environmental applications

    Science.gov (United States)

    Cardoso, F. A.; Martins, V. C.; Fonseca, L. P.; Germano, J.; Sousa, L. A.; Piedade, M. S.; Freitas, P. P.

    2010-09-01

    Faster, more sensitive and easy to operate biosensing devices still are a need at important areas such as biomedical diagnostics, food control and environmental monitoring. Recently, spintronic-devices have emerged as a promising alternative to the existent technologies [1-3]. A number of advantages, namely high sensitivity, easy integration, miniaturization, scalability, robustness and low cost make these devices potentially capable of responding to the existent technological need. In parallel, the field of microfluidics has shown great advances [4]. Microfluidic systems allow the analysis of small sample volumes (from micro- down to pico-liters), often by automate sample processing with the ability to integrate several steps into a single device (analyte amplification, concentration, separation and/or labeling), all in a reduced assay time (minutes to hours) and affordable cost. The merging of these two technologies, magnetoresistive biochips and microfluidics, will enable the development of highly competitive devices. This work reports the integration of a magnetoresistive biochip with a microfluidic system inside a portable and autonomous electronic platform aiming for a fully integrated device. A microfluidic structure fabricated in polydimethylsiloxane with dimensions of W: 0.5mm, H: 0.1mm, L: 10mm, associated to a mechanical system to align and seal the channel by pressure is presented (Fig. 1) [5]. The goal is to perform sample loading and transportation over the chip and simultaneously control the stringency and uniformity of the wash-out process. The biochip output is acquired by an electronic microsystem incorporating the circuitry to control, address and read-out the 30 spin-valve sensors sequentially (Fig. 1) [2]. This platform is being applied to the detection of water-borne microbial pathogens (e.g. Salmonella and Escherichia coli) and genetic diseases diagnosis (e.g. cystic fibrosis) through DNA hybridization assays. Open chamber measurements were

  11. Surface spintronics enhanced photo-catalytic hydrogen evolution: Mechanisms, strategies, challenges and future

    Science.gov (United States)

    Zhang, Wenyan; Gao, Wei; Zhang, Xuqiang; Li, Zhen; Lu, Gongxuan

    2018-03-01

    Hydrogen is a green energy carrier with high enthalpy and zero environmental pollution emission characteristics. Photocatalytic hydrogen evolution (HER) is a sustainable and promising way to generate hydrogen. Despite of great achievements in photocatalytic HER research, its efficiency is still limited due to undesirable electron transfer loss, high HER over-potential and low stability of some photocatalysts, which lead to their unsatisfied performance in HER and anti-photocorrosion properties. In recent years, many spintronics works have shown their enhancing effects on photo-catalytic HER. For example, it was reported that spin polarized photo-electrons could result in higher photocurrents and HER turn-over frequency (up to 200%) in photocatalytic system. Two strategies have been developed for electron spin polarizing, which resort to heavy atom effect and magnetic induction respectively. Both theoretical and experimental studies show that controlling spin state of OHrad radicals in photocatalytic reaction can not only decrease OER over-potential (even to 0 eV) of water splitting, but improve stability and charge lifetime of photocatalysts. A convenient strategy have been developed for aligning spin state of OHrad by utilizing chiral molecules to spin filter photo-electrons. By chiral-induced spin filtering, electron polarization can approach to 74%, which is significantly larger than some traditional transition metal devices. Those achievements demonstrate bright future of spintronics in enhancing photocatalytic HER, nevertheless, there is little work systematically reviewing and analysis this topic. This review focuses on recent achievements of spintronics in photocatalytic HER study, and systematically summarizes the related mechanisms and important strategies proposed. Besides, the challenges and developing trends of spintronics enhanced photo-catalytic HER research are discussed, expecting to comprehend and explore such interdisciplinary research in

  12. Nanoscale thermal transport

    Science.gov (United States)

    Cahill, David G.; Ford, Wayne K.; Goodson, Kenneth E.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Merlin, Roberto; Phillpot, Simon R.

    2003-01-01

    Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid-solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The

  13. Large-scale fabrication of BN tunnel barriers for graphene spintronics

    International Nuclear Information System (INIS)

    Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

    2014-01-01

    We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials

  14. Friction laws at the nanoscale.

    Science.gov (United States)

    Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

    2009-02-26

    Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

  15. Quantum Transport Simulations of Nanoscale Materials

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2016-01-01

    -performance supercomputers allow us to control and exploit their microscopic properties at the atomic scale, hence making it possible to design novel nanoscale molecular devices with interesting features (e.g switches, rectifiers, negative differential conductance, and high

  16. Nanoscale phase change memory materials.

    Science.gov (United States)

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  17. Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2014-01-01

    C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak spin-orbit and hyperfine interactions, which is a prerequisite for long spin lifetimes. We report spin-polarized transport in spin-valve-like structures containing ultrathin (<10 nm) C 60 layers,

  18. Spin-Valve Effect in a Ni-C60-Ni Device

    National Research Council Canada - National Science Library

    He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2006-01-01

    .... The magnitude of the junction magnetoresistance (JMR) is found to be significantly large for the device, which makes it a promising candidate for realistic applications in molecular spintronics...

  19. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  20. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

    2011-01-01

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  1. Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Varun, E-mail: varun@iiitm.ac.in [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015 (India); Srivastava, Pankaj [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015 (India); Jaiswal, Neeraj K. [Discipline of Physics, Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Dumna Airport Road, Jabalpur 482005 (India)

    2017-02-28

    Highlights: • Asymmetric hydrogen termination of Zigzag Germanene Nanoribbons (ZGeNR) is presented with their plausible spintronic device application. • It is revealed that asymmetric terminations are energetically more favourable compared to symmetric terminations. • The magnetic moment analysis depicts that asymmetric ZGeNR have a magnetic ground state with a preferred ferromagnetic (FM) coupling. • Presented doped asymmetric ZGeNR exhibits a half-metallic character which makes them qualify for spin-filtering device. - Abstract: First-principles investigations have been performed to explore the spin based electronic and transport properties of asymmetrically H-terminated zigzag germanene nanoribbons (2H−H ZGeNR). Investigations reveal a significant formation energy difference (ΔE{sub F} = E{sub F(2H-H)} − E{sub F(H-H)} ∼ −0.49 eV), highlighting more energetic stability for asymmetric edge termination compared to symmetric edge termination, irrespective of the ribbon width. Further, magnetic moment analysis and total energy calculations were performed to unveil that these structures have a magnetic ground state with preferred ferromagnetic (FM) coupling. The calculated E-k structures project a unique bipolar semiconducting behaviour for 2H−H ZGeNR which is contrast to H-terminated ZGeNR. Half-metallic transformation has also been revealed via suitable p-type or n-type doping for these structures. Finally, transport calculations were performed to highlight the selective contributions of spin-down (spin-up) electrons in the I–V characteristics of the doped 2H−H ZGeNR, suggesting their vitality for spintronic device applications.

  2. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    International Nuclear Information System (INIS)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies

  3. Systems engineering at the nanoscale

    Science.gov (United States)

    Benkoski, Jason J.; Breidenich, Jennifer L.; Wei, Michael C.; Clatterbaughi, Guy V.; Keng, Pei Yuin; Pyun, Jeffrey

    2012-06-01

    Nanomaterials have provided some of the greatest leaps in technology over the past twenty years, but their relatively early stage of maturity presents challenges for their incorporation into engineered systems. Perhaps even more challenging is the fact that the underlying physics at the nanoscale often run counter to our physical intuition. The current state of nanotechnology today includes nanoscale materials and devices developed to function as components of systems, as well as theoretical visions for "nanosystems," which are systems in which all components are based on nanotechnology. Although examples will be given to show that nanomaterials have indeed matured into applications in medical, space, and military systems, no complete nanosystem has yet been realized. This discussion will therefore focus on systems in which nanotechnology plays a central role. Using self-assembled magnetic artificial cilia as an example, we will discuss how systems engineering concepts apply to nanotechnology.

  4. The first radical-based spintronic memristors: Towards resistive RAMs made of organic magnets

    Science.gov (United States)

    Goss, Karin; Krist, Florian; Seyfferle, Simon; Hoefel, Udo; Paretzki, Alexa; Dressel, Martin; Bogani, Lapo; Institut Fuer Anorganische Chemie, University of Stuttgart Collaboration; 1. Physikalisches Institut, University of Stuttgart Team

    2014-03-01

    Using molecules as building blocks for electronic devices offers ample possibilities for new device functionalities due to a chemical tunability much higher than that of standard inorganic materials, and at the same time offers a decrease in the size of the electronic component down to the single-molecule level. Purely organic molecules containing no metallic centers such as organic radicals can serve as an electronic component with magnetic properties due to the unpaired electron in the radical state. Here we present memristive logic units based on organic radicals of the nitronyl-nitroxide kind. Integrating these purely molecular units as a spin coated layer into crossbar arrays, electrically induced unipolar resistive switching is observed with a change in resistance of up to 100%. We introduce a model based on filamentary reorganization of molecules of different oxidation state revealing the importance of the molecular nature for the switching properties. The major role of the oxidation state of these paramagnetic molecules introduces a magnetic field dependence to the device functionality, which goes along with magnetoresistive charactistics observed for the material. These are the first steps towards a spintronic implementation of organic radicals in electronic devices.

  5. Oxide thin films for spintronics application growth and characterization

    OpenAIRE

    Popovici, Nicoleta, 1973-

    2009-01-01

    Tese de doutoramento, Física (Física), Universidade de Lisboa, Faculdade de Ciências, 2009 During my PhD research I have synthesized thin films of a material known as a diluted magnetic semiconductor (DMS) using the pulsed laser deposition (PLD) technique. This material is envisioned to be of importance in the emerging field of spintronics where both the charge and the spin of the carriers can be combined to yield unique functionalities. It was envisaged that if spin polarized charge carri...

  6. Prediction of novel interface-driven spintronic effects

    International Nuclear Information System (INIS)

    Bhattacharjee, Satadeep; Singh, Surendra; Bellaiche, L; Wang, D; Viret, M

    2014-01-01

    The recently proposed coupling between the angular momentum density and magnetic moment (Raeliarijaona et al 2013 Phys. Rev. Lett. 110 137205) is shown here to result in the prediction of (i) novel spin currents generated by an electrical current and (ii) new electrical currents induced by a spin current in systems possessing specific interfaces between two different materials. Some of these spin (electrical) currents can be reversed near the interface by reversing the applied electrical (spin) current. Similarities and differences between these novel spintronic effects and the well-known spin Hall and inverse spin Hall effects are also discussed. (paper)

  7. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  8. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon

    2007-01-01

    In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2x10 6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1x10 10 cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming

  9. Dynamics at the nanoscale

    International Nuclear Information System (INIS)

    Stoneham, A.M.; Gavartin, J.L.

    2007-01-01

    However fascinating structures may be at the nanoscale, time-dependent behaviour at the nanoscale has far greater importance. Some of the dynamics is random, with fluctuations controlling rate processes and making thermal ratchets possible. Some of the dynamics causes the transfer of energy, of signals, or of charge. Such transfers are especially efficiently controlled in biological systems. Other dynamical processes occur when we wish to control the nanoscale, e.g., to avoid local failures of gate dielectrics, or to manipulate structures by electronic excitation, to use spin manipulation in quantum information processing. Our prime purpose is to make clear the enormous range and variety of time-dependent nanoscale phenomena

  10. Two-dimensional linear elasticity theory of magneto-electro-elastic plates considering surface and nonlocal effects for nanoscale device applications

    Science.gov (United States)

    Wang, Wenjun; Li, Peng; Jin, Feng

    2016-09-01

    A novel two-dimensional linear elastic theory of magneto-electro-elastic (MEE) plates, considering both surface and nonlocal effects, is established for the first time based on Hamilton’s principle and the Lee plate theory. The equations derived are more general, suitable for static and dynamic analyses, and can also be reduced to the piezoelectric, piezomagnetic, and elastic cases. As a specific application example, the influences of the surface and nonlocal effects, poling directions, piezoelectric phase materials, volume fraction, damping, and applied magnetic field (i.e., constant applied magnetic field and time-harmonic applied magnetic field) on the magnetoelectric (ME) coupling effects are first investigated based on the established two-dimensional plate theory. The results show that the ME coupling coefficient has an obvious size-dependent characteristic owing to the surface effects, and the surface effects increase the ME coupling effects significantly when the plate thickness decreases to its critical thickness. Below this critical thickness, the size-dependent effect is obvious and must be considered. In addition, the output power density of a magnetic energy nanoharvester is also evaluated using the two-dimensional plate theory obtained, with the results showing that a relatively larger output power density can be achieved at the nanoscale. This study provides a mathematical tool which can be used to analyze the mechanical properties of nanostructures theoretically and numerically, as well as evaluating the size effect qualitatively and quantitatively.

  11. Hybrid Spintronic Structures With Magnetic Oxides and Heusler Alloys

    DEFF Research Database (Denmark)

    Xu, Y. B.; Hassan, S. S. A.; Wong, P. K. J.

    2008-01-01

    Hybrid spintronic structures, integrating half-metallic magnetic oxides and Heusler alloys with their predicted high spin polarization, are important for the development of second-generation spintronics with high-efficient spin injection. We have synthesized epitaxial magnetic oxide Fe3O4 on Ga......As(100) and the unit cell of the Fe3O4 was found to be rotated by 45 degrees to match the gallium arsenide GaAs. The films were found to have a bulk-like moment down to 3-4 nm and a low coercivity indicating a high-quality magnetic interface. The magnetization hysteresis loops of the ultrathin films...... are controlled by uniaxial magnetic anisotropy. The dynamic response of the sample shows a heavily damped precessional response to the applied field pulses. In the Heusler alloy system of Co-2 MnGa on GaAs, we found that the magnetic moment was reduced for thicknesses down to 10 nm, which may account...

  12. Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

    Science.gov (United States)

    Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

    2017-09-01

    Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

  13. Analytical TEM investigations of nanoscale magnetic materials

    International Nuclear Information System (INIS)

    Meingast, A.

    2015-01-01

    element identification or, an absolute quantification is possible. Moreover, the parallel acquisition of EDXS and EELS signals allows combining the strength of each respective technique. A careful and precise sample preparation is crucial and knowledge and suitable methods had to be developed. Preparation induced modifications of the investigated material was minimized by identifying changes to the material during thinning to electron transparency. Reducing surface amorphization of TEM specimens and moreover identifying and quantifying surface oxidation was an important factor. Questions regarding the structural architecture of three diverse magnetic materials down to the atomic level have been addressed, and elemental distributions have been determined quantitatively. The first part of the results treats structural and analytical results of crystalline nanocubes. These cubes have dimensions below 30 nm, and represent a class of materials to exploit magnetic exchange coupling on a nanometer scale. Knowledge about the elemental distribution on a nanometer basis within a nanocube is necessary to tailor the magnetic properties. Analytical investigations deal with the determination of the oxidation state of iron oxide reference nanocrystals and the elemental distribution within a multi-component system. Transition metal doped gallium nitride (GaN) falling into the class of dilute magnetic semiconductors was investigated by various high resolution imaging techniques and spectroscopic methods for resolving morphologies and dopant concentrations. The doping of GaN is intended to provide additional magnetic functionalities to the semiconducting material used for future spintronic devices. Quantitative EELS measurements resolved that Mn was incorporated either in a homogeneous way or added to GaN in a pulsed way, leading to a layered doping. Iron was used as another potential dopant for GaN. Hereby specific growth procedures enabled the formation of a layer of iron

  14. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    DEFF Research Database (Denmark)

    Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

    2018-01-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

  15. Effects of nanoscale contacts to graphene

    NARCIS (Netherlands)

    Franklin, A.D.; Han, S.-J.; Bol, A.A.; Haensch, W.

    2011-01-01

    Understanding and optimizing transport between metal contacts and graphene is one of the foremost challenges for graphene devices. In this letter, we present the first results on the effects of reducing contact dimensions to the nanoscale in single-layer graphene transistors. Using noninvasive

  16. Selective nanoscale growth of lattice mismatched materials

    Science.gov (United States)

    Lee, Seung-Chang; Brueck, Steven R. J.

    2017-06-20

    Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

  17. Nanoscale magnetic ratchets based on shape anisotropy

    Science.gov (United States)

    Cui, Jizhai; Keller, Scott M.; Liang, Cheng-Yen; Carman, Gregory P.; Lynch, Christopher S.

    2017-02-01

    Controlling magnetization using piezoelectric strain through the magnetoelectric effect offers several orders of magnitude reduction in energy consumption for spintronic applications. However strain is a uniaxial effect and, unlike directional magnetic field or spin-polarized current, cannot induce a full 180° reorientation of the magnetization vector when acting alone. We have engineered novel ‘peanut’ and ‘cat-eye’ shaped nanomagnets on piezoelectric substrates that undergo repeated deterministic 180° magnetization rotations in response to individual electric-field-induced strain pulses by breaking the uniaxial symmetry using shape anisotropy. This behavior can be likened to a magnetic ratchet, advancing magnetization clockwise with each piezostrain trigger. The results were validated using micromagnetics implemented in a multiphysics finite elements code to simulate the engineered spatial and temporal magnetic behavior. The engineering principles start from a target device function and proceed to the identification of shapes that produce the desired function. This approach opens a broad design space for next generation magnetoelectric spintronic devices.

  18. Nanoscale effects in interdiffusion

    International Nuclear Information System (INIS)

    Erdelyi, Z.; Langer, G.A.; Beke, D.L.; Csik, A.

    2007-01-01

    composition profile develops highly asymmetrically but also the stress profile. Moreover, we have also seen that the stress effects usually slow down the intermixing process, and the slowing down is more pronounced in case of asymmetric diffusion. Computer simulations also have shown that on the nanoscale, for strongly composition dependent diffusion coefficients, diffuse interfaces can sharpen rather broaden in completely miscible binary systems during annealing independently of the different kind of stress effects considered. The stress effects influence only the timescale of the process. This phenomenon could provide a useful tool for the improvement of interfaces and offer a way to fabricate of e.g. better Xray or neutron mirrors, microelectronic devices or multilayers with giant magnetic resistance. These phenomena predicted by computer simulations have been proved experimentally as well

  19. Group IV all-semiconductor spintronics. Materials aspects and optical spin selection rules

    Energy Technology Data Exchange (ETDEWEB)

    Sircar, Narayan

    2012-04-03

    In the scope of the present thesis various aspects for the realization of spintronic applications based on group IV semiconductors are discussed. This work comprises a refined material characterization of the magnetic semiconductor GeMn. We furthermore present efforts to utilize this material as spin injector for a Si-based optical spintronic device. Applying transmission electron microscopy and atom probe tomography, we are able to resolve a vertical anisotropy in the self-assembly, leading to the stacking of well-defined clusters in the growth direction. Three-dimensional atom distribution maps confirm that clusters are built from a nonstoichiometric GeMn alloy and exhibit a high-Mn-concentration core with a decreasing Mn concentration toward a shell. An amorphous nature of the cluster cores as well as the crystallinity of the shells, coherent with the surrounding Ge lattice, are revealed in scanning transmission electron microscopy. We localize a strain field surrounding each GeMn cluster by scanning transmission electron microscopy. The importance of strain to the stacking phenomenon of the clusters becomes clear in studies of Ge/GeMn superlattice structures, where a vertical spatial correlation of clusters over 30 nm-thick Ge spacer layers is observed. We present evidence that electrical transport properties of the p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate. It is shown that substrate conduction persists also for wellconducting degenerate p-type reference thin films, giving rise to an effective two-layer conduction scheme. GeMn thin films fabricated on these substrates exhibit only a negligible magnetoresistance effect. Before integrating GeMn in an optical spintronic device, some key aspects important for an understanding of the optical injection and detection of carrier spins in Si and Si-based heterostructures are clarified in the second part of this thesis. In

  20. Nanoscale thermal transport: Theoretical method and application

    Science.gov (United States)

    Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

    2018-03-01

    With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

  1. Nanoscale hotspots due to nonequilibrium thermal transport

    International Nuclear Information System (INIS)

    Sinha, Sanjiv; Goodson, Kenneth E.

    2004-01-01

    Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of the additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal

  2. Nanoscale Ionic Liquids

    Science.gov (United States)

    2006-11-01

    Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

  3. Spintronics with metals: Current perpendicular-to-the-plane magneto-transport studies

    Science.gov (United States)

    Sharma, Amit

    In this thesis, we present studies to produce new information about three topics: current perpendicular to the plane magnetoresistance (CPP-MR), spin transfer torque (STT), and antiferromagnetic spintronics. Large values of CPP-MR interface parameters---specific interface resistance (Area times resistance), 2AR*, and scattering asymmetry, gamma---are desirable for the use of CPP-MR in devices. Stimulated by a nanopillar study by the Cornell Group, we first discovered that Py/Al had an unusually large 2AR*, but a small gamma. In the hope of finding metal pairs with large values of both the interface parameters, the Py/Al studies led us to study the following interfaces: (a) F/Al with F: Py (= Ni84Fe16). Co, Fe, Co91Fe9, and (b) F/N: Py/Pd, Fe/V, Fe/Nb and Co/Pt. None of the metal pairs looks better for CPP-MR devices. The Cornell group also found that bracketing Al with thin Cu in Py/Al/Py nanopillars, gave an MR similar to Py/Al/Py rather than to Py/Cu/Py. To try to understand this result, we studied the effect of Cu/Al/Cu spacers on ADeltaR = AR(AP) - AR(P) of Py exchange biased spin valves (EBSVs). Here AR(AP) and AR(P) are the specific resistances in the anti-parallel (AP) and parallel (P) configurations of the F layers. Intriguingly, fixing the Al thickness tAl = 10 nm and varying tCu has no effect on ADeltaR, but fixing tCu = 10 nm and varying t Al significantly affected ADeltaR. These unusual behaviors are probably due to strong Al and Cu intermixing, with probable formation of some fraction of ordered alloys. Recent calculations predicted that 2AR of Al/Ag interfaces would vary substantially with orientation and with alloying. The latter is a special potential problem, because Al and Ag interdiffuse at room temperature. To compare with the calculations, we determined 2AR of sputtered Al/Ag interfaces with (111) orientation. Our estimate agrees with calculations that assume 4 monolayers of interfacial disorder, consistent with modest intermixing. To aid in

  4. Effect of external magnetic field on locking range of spintronic feedback nano oscillator

    Directory of Open Access Journals (Sweden)

    Hanuman Singh

    2018-05-01

    Full Text Available In this work we have studied the effect of external applied magnetic field on the locking range of spintronic feedback nano oscillator. Injection locking of spintronic feedback nano oscillator at integer and fractional multiple of its auto oscillation frequency was demonstrated recently. Here we show that the locking range increases with increasing external magnetic field. We also show synchronization of spintronic feedback nano oscillator at integer (n=1,2,3 multiples of auto oscillation frequency and side band peaks at higher external magnetic field values. We have verified experimental results with macro-spin simulation using similar conditions as used for the experimental study.

  5. Effect of external magnetic field on locking range of spintronic feedback nano oscillator

    Science.gov (United States)

    Singh, Hanuman; Konishi, K.; Bose, A.; Bhuktare, S.; Miwa, S.; Fukushima, A.; Yakushiji, K.; Yuasa, S.; Kubota, H.; Suzuki, Y.; Tulapurkar, A. A.

    2018-05-01

    In this work we have studied the effect of external applied magnetic field on the locking range of spintronic feedback nano oscillator. Injection locking of spintronic feedback nano oscillator at integer and fractional multiple of its auto oscillation frequency was demonstrated recently. Here we show that the locking range increases with increasing external magnetic field. We also show synchronization of spintronic feedback nano oscillator at integer (n=1,2,3) multiples of auto oscillation frequency and side band peaks at higher external magnetic field values. We have verified experimental results with macro-spin simulation using similar conditions as used for the experimental study.

  6. Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

    International Nuclear Information System (INIS)

    Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

    2012-01-01

    Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

  7. Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

    Science.gov (United States)

    Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

    2018-02-01

    Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

  8. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bratkovsky, A M [Hewlett-Packard Laboratories, 1501 Page Mill Road, MS 1123, Palo Alto, CA 94304 (United States)

    2008-02-15

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  9. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bratkovsky, A M

    2008-01-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field

  10. Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

    Science.gov (United States)

    Bratkovsky, A. M.

    2008-02-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  11. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-07-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.

  12. Magnetic Transport in Spin Antiferromagnets for Spintronics Applications

    Directory of Open Access Journals (Sweden)

    Mohamed Azzouz

    2017-10-01

    Full Text Available Had magnetic monopoles been ubiquitous as electrons are, we would probably have had a different form of matter, and power plants based on currents of these magnetic charges would have been a familiar scene of modern technology. Magnetic dipoles do exist, however, and in principle one could wonder if we can use them to generate magnetic currents. In the present work, we address the issue of generating magnetic currents and magnetic thermal currents in electrically-insulating low-dimensional Heisenberg antiferromagnets by invoking the (broken electricity-magnetism duality symmetry. The ground state of these materials is a spin-liquid state that can be described well via the Jordan–Wigner fermions, which permit an easy definition of the magnetic particle and thermal currents. The magnetic and magnetic thermal conductivities are calculated in the present work using the bond–mean field theory. The spin-liquid states in these antiferromagnets are either gapless or gapped liquids of spinless fermions whose flow defines a current just as the one defined for electrons in a Fermi liquid. The driving force for the magnetic current is a magnetic field with a gradient along the magnetic conductor. We predict the generation of a magneto-motive force and realization of magnetic circuits using low-dimensional Heisenberg antiferromagnets. The present work is also about claiming that what the experiments in spintronics attempt to do is trying to treat the magnetic degrees of freedoms on the same footing as the electronic ones.

  13. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-01-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed

  14. Magnetic polyoxometalates: from molecular magnetism to molecular spintronics and quantum computing.

    Science.gov (United States)

    Clemente-Juan, Juan M; Coronado, Eugenio; Gaita-Ariño, Alejandro

    2012-11-21

    In this review we discuss the relevance of polyoxometalate (POM) chemistry to provide model objects in molecular magnetism. We present several potential applications in nanomagnetism, in particular, in molecular spintronics and quantum computing.

  15. Magnon spintronics in non-collinear magnetic insulator/metal heterostructures

    NARCIS (Netherlands)

    Aqeel, Aisha

    2017-01-01

    The research presented in this thesis focuses on the growth of complex magnetic materials with unique magnetic properties and experimental investigation of fundamental spintronics phenomena in these magnetic insulators with magnetic orders varying from collinear to noncollinear chiral spin

  16. Rational Design of Two-Dimensional Metallic and Semiconducting Spintronic Materials Based on Ordered Double-Transition-Metal MXenes

    KAUST Repository

    Dong, Liang

    2016-12-30

    Two-dimensional (2D) materials that display robust ferromagnetism have been pursued intensively for nanoscale spintronic applications, but suitable candidates have not been identified. Here we present theoretical predictions on the design of ordered double-transition-metal MXene structures to achieve such a goal. On the basis of the analysis of electron filling in transition-metal cations and first-principles simulations, we demonstrate robust ferromagnetism in Ti2MnC2Tx monolayers regardless of the surface terminations (T = O, OH, and F), as well as in Hf2MnC2O2 and Hf2VC2O2 monolayers. The high magnetic moments (3–4 μB/unit cell) and high Curie temperatures (495–1133 K) of these MXenes are superior to those of existing 2D ferromagnetic materials. Furthermore, semimetal-to-semiconductor and ferromagnetic-to-antiferromagnetic phase transitions are predicted to occur in these materials in the presence of small or moderate tensile in-plane strains (0–3%), which can be externally applied mechanically or internally induced by the choice of transition metals.

  17. Theory of quantum transport at nanoscale an introduction

    CERN Document Server

    Ryndyk, Dmitry A

    2016-01-01

    This book is an introduction to a rapidly developing field of modern theoretical physics – the theory of quantum transport at nanoscale. The theoretical methods considered in the book are in the basis of our understanding of charge, spin and heat transport in nanostructures and nanostructured materials and are widely used in nanoelectronics, molecular electronics, spin-dependent electronics (spintronics) and bio-electronics. The book is based on lectures for graduate and post-graduate students at the University of Regensburg and the Technische Universität Dresden (TU Dresden). The first part is devoted to the basic concepts of quantum transport: Landauer-Büttiker method and matrix Green function formalism for coherent transport, Tunneling (Transfer) Hamiltonian and master equation methods for tunneling, Coulomb blockade, vibrons and polarons. The results in this part are obtained as possible without sophisticated techniques, such as nonequilibrium Green functions, which are considered in detail in the...

  18. Sensing at the nanoscale

    Science.gov (United States)

    Demming, Anna; Hierold, Christofer

    2013-11-01

    The merits of nanostructures in sensing may seem obvious, yet playing these attributes to their maximum advantage can be a work of genius. As fast as sensing technology is improving, expectations are growing, with demands for cheaper devices with higher sensitivities and an ever increasing range of functionalities and compatibilities. At the same time tough scientific challenges like low power operation, noise and low selectivity are keeping researchers busy. This special issue on sensing at the nanoscale with guest editor Christofer Hierold from ETH Zurich features some of the latest developments in sensing research pushing at the limits of current capabilities. Cheap and easy fabrication is a top priority. Among the most popular nanomaterials in sensing are ZnO nanowires and in this issue Dario Zappa and colleagues at Brescia University in Italy simplify an already cheap and efficient synthesis method, demonstrating ZnO nanowire fabrication directly onto silicon substrates [1]. Meanwhile Nicolae Barson and colleagues in Germany point out the advantages of flame spray pyrolysis fabrication in a topical review [2] and, maximizing on existing resources, researchers in Denmark and Taiwan report cantilever sensing using a US20 commercial DVD-ROM optical pickup unit as the readout source [3]. The sensor is designed to detect physiological concentrations of soluble urokinase plasminogen activator receptor, a protein associated with inflammation due to HIV, cancer and other infectious diseases. With their extreme properties carbon nanostructures feature prominently in the issue, including the demonstration of a versatile and flexible carbon nanotube strain sensor [4] and a graphene charge sensor with sensitivities of the order of 1.3 × 10-3 e Hz-1/2 [5]. The issue of patterning for sensing devices is also tackled by researchers in the US who demonstrate a novel approach for multicomponent pattering metal/metal oxide nanoparticles on graphene [6]. Changes in electrical

  19. Nanoscale cryptography: opportunities and challenges.

    Science.gov (United States)

    Masoumi, Massoud; Shi, Weidong; Xu, Lei

    2015-01-01

    While most of the electronics industry is dependent on the ever-decreasing size of lithographic transistors, this scaling cannot continue indefinitely. To improve the performance of the integrated circuits, new emerging and paradigms are needed. In recent years, nanoelectronics has become one of the most important and exciting forefront in science and engineering. It shows a great promise for providing us in the near future with many breakthroughs that change the direction of technological advances in a wide range of applications. In this paper, we discuss the contribution that nanotechnology may offer to the evolution of cryptographic hardware and embedded systems and demonstrate how nanoscale devices can be used for constructing security primitives. Using a custom set of design automation tools, it is demonstrated that relative to a conventional 45-nm CMOS system, performance gains can be obtained up to two orders of magnitude reduction in area and up to 50 % improvement in speed.

  20. Infochemistry Information Processing at the Nanoscale

    CERN Document Server

    Szacilowski, Konrad

    2012-01-01

    Infochemistry: Information Processing at the Nanoscale, defines a new field of science, and describes the processes, systems and devices at the interface between chemistry and information sciences. The book is devoted to the application of molecular species and nanostructures to advanced information processing. It includes the design and synthesis of suitable materials and nanostructures, their characterization, and finally applications of molecular species and nanostructures for information storage and processing purposes. Divided into twelve chapters; the first three chapters serve as an int

  1. Nanoscale magnetic field mapping with a single spin scanning probe magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Rondin, L.; Tetienne, J.-P.; Spinicelli, P.; Roch, J.-F.; Jacques, V. [Laboratoire de Photonique Quantique et Moleculaire, Ecole Normale Superieure de Cachan and CNRS UMR 8537, 94235 Cachan Cedex (France); Dal Savio, C.; Karrai, K. [Attocube systems AG, Koeniginstrasse 11A RGB, Munich 80539 (Germany); Dantelle, G. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique and CNRS UMR 7643, 91128 Palaiseau (France); Thiaville, A.; Rohart, S. [Laboratoire de Physique des Solides, Universite Paris-Sud and CNRS UMR 8502, 91405 Orsay (France)

    2012-04-09

    We demonstrate quantitative magnetic field mapping with nanoscale resolution, by applying a lock-in technique on the electron spin resonance frequency of a single nitrogen-vacancy defect placed at the apex of an atomic force microscope tip. In addition, we report an all-optical magnetic imaging technique which is sensitive to large off-axis magnetic fields, thus extending the operation range of diamond-based magnetometry. Both techniques are illustrated by using a magnetic hard disk as a test sample. Owing to the non-perturbing and quantitative nature of the magnetic probe, this work should open up numerous perspectives in nanomagnetism and spintronics.

  2. Nanopatterning and nanoscale devices for biological applications

    CERN Document Server

    Šelimović, Seila

    2014-01-01

    ""This book is a good reference for researchers interested in realizing bio-applications based on micro- and nanostructures, where their interface with liquids and biomolecules is the key point. The most important 'players' of micro- and nano-bioengineering are considered, from DNA to proteins and cells. The work is a good merger of basic concepts and real examples of applications.""-Danilo Demarchi, Politecnico di Torino, Italy

  3. Photonic crystals: towards nanoscale photonic devices

    National Research Council Canada - National Science Library

    Lourtioz, J.-M

    2005-01-01

    .... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

  4. Towards Nanoscale Biomedical Devices in Medicine

    DEFF Research Database (Denmark)

    Parracino, A.; Gajula, G.P.; di Gennaro, A.K.

    2011-01-01

    of ubiquitous enzymes which play a key role in formaldehyde detoxification both in prokaryotes and eukaryotes. PhEst was originally annotated as a putative feruloyl esterase, an enzyme that releases ferulic acid (an antioxidant reactive towards free radicals such as reactive oxygen species) from polysaccharides...

  5. Enhanced nanoscale friction on fluorinated graphene.

    Science.gov (United States)

    Kwon, Sangku; Ko, Jae-Hyeon; Jeon, Ki-Joon; Kim, Yong-Hyun; Park, Jeong Young

    2012-12-12

    Atomically thin graphene is an ideal model system for studying nanoscale friction due to its intrinsic two-dimensional (2D) anisotropy. Furthermore, modulating its tribological properties could be an important milestone for graphene-based micro- and nanomechanical devices. Here, we report unexpectedly enhanced nanoscale friction on chemically modified graphene and a relevant theoretical analysis associated with flexural phonons. Ultrahigh vacuum friction force microscopy measurements show that nanoscale friction on the graphene surface increases by a factor of 6 after fluorination of the surface, while the adhesion force is slightly reduced. Density functional theory calculations show that the out-of-plane bending stiffness of graphene increases up to 4-fold after fluorination. Thus, the less compliant F-graphene exhibits more friction. This indicates that the mechanics of tip-to-graphene nanoscale friction would be characteristically different from that of conventional solid-on-solid contact and would be dominated by the out-of-plane bending stiffness of the chemically modified graphene. We propose that damping via flexural phonons could be a main source for frictional energy dissipation in 2D systems such as graphene.

  6. Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

    Science.gov (United States)

    Hamedani Golshan, Negar

    Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater

  7. PREFACE: Nanoscale science and technology

    Science.gov (United States)

    Bellucci, Stefano

    2008-11-01

    autoclave, UV light source and ethylene oxide treatment. The best of these treatments, i.e. the one that least affected the morphology and chemical properties of CNTs, has been selected for future in vivo tests on rats. FIR reflectivity of microcrystalline Ag2CdI4 between 10 and 420 K by I Karbovnyk reported the experimental results of far-infrared spectroscopy investigations on microcrystalline Ag2CdI4 samples prepared by the solid state synthesis, carried out in the wide temperature range of 10-420 K, which includes the temperature of the superionic phase transitions, the material is known to undergo. The purpose of our measurements lies in finding changes in frequencies and other parameters of phonon modes near the phase transitions temperatures. Infrared measurements were carried out at SINBAD infrared beamline of Daphne Light Laboratory (LNF, Frascati, Italy). TT nanojunctions with spin-orbit interaction as spintronic single-qubit gates by S Bellucci addressed the issue of quantum interference effects in nanometric devices, which provide suitable means for controlling spin at mesoscopic scales. The authors applied such a control mechanism to the spin-dependent transport in a ballistic TT cross junction patterned in two dimensional electron gases (2DEGs). The study was essentially based on the spin-orbit (SO) interaction arising from the asymmetry in quantum well potential that confines the 2DEG (Rashba SO term). The authors focused on single-channel transport and solve analytically the spin polarization of the current. The TT cross junction acts as a one-qubit spintronic quantum gate, whose properties can be varied by tuning the strength of the spin-orbit interaction, as well as by changing the relative position of the junctions. P Onorato presented two posters: spin currents in ballistic low dimensional nanodevices; spin filtering and spin Hall accumulation in an asymmetric ballistic nanojunction with Rashba spin-orbit interaction. In the first one the authors

  8. Ellipsometry at the nanoscale

    CERN Document Server

    Hingerl, Kurt

    2013-01-01

    This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics...

  9. Nanoscale Organic Hybrid Electrolytes

    KAUST Repository

    Nugent, Jennifer L.

    2010-08-20

    Nanoscale organic hybrid electrolytes are composed of organic-inorganic hybrid nanostructures, each with a metal oxide or metallic nanoparticle core densely grafted with an ion-conducting polyethylene glycol corona - doped with lithium salt. These materials form novel solvent-free hybrid electrolytes that are particle-rich, soft glasses at room temperature; yet manifest high ionic conductivity and good electrochemical stability above 5V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Nanoscale Organic Hybrid Electrolytes

    KAUST Repository

    Nugent, Jennifer L.; Moganty, Surya S.; Archer, Lynden A.

    2010-01-01

    Nanoscale organic hybrid electrolytes are composed of organic-inorganic hybrid nanostructures, each with a metal oxide or metallic nanoparticle core densely grafted with an ion-conducting polyethylene glycol corona - doped with lithium salt. These materials form novel solvent-free hybrid electrolytes that are particle-rich, soft glasses at room temperature; yet manifest high ionic conductivity and good electrochemical stability above 5V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Spintronic and transport properties of linear atomic strings of transition metals (Fe, Co, Ni)

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Neha, E-mail: nehatyagi.phy@gmail.com [Department of Applied Physics, Delhi Technological University, New Delhi (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design & Manufacturing, Jabalpur (India); Srivastava, Pankaj [Nanomaterials Research Group, ABV-Indian Institute of Information Technology & Management, Gwalior (India)

    2016-05-06

    In the present work, first-principles investigations have been performed to study the spintronic and transport properties of linear atomic strings of Fe, Co and Ni. The structural stabilities of the considered strings were compared on the basis of binding energies which revealed that all the strings are energetically feasible to be achieved. Further, all the considered strings are found to be ferromagnetic and the observed magnetic moment ranges from 1.38 to 1.71 μ{sub B}. The observed transport properties and high spin polarization points towards their potential for nano interconnects and spintronic applications.

  12. Spintronic Circuits: The Building Blocks of Spin-Based Computation

    Directory of Open Access Journals (Sweden)

    Roshan Warman

    2016-10-01

    Full Text Available In the most general situation, binary computation is implemented by means of microscopic logical gates known as transistors. According to Moore’s Law, the size of transistors will half every two years, and as these transistors reach their fundamental size limit, the quantum effects of the electrons passing through the transistors will be observed. Due to the inherent randomness of these quantum fluctuations, the basic binary logic will become uncontrollable. This project describes the basic principle governing quantum spin-based computing devices, which may provide an alternative to the conventional solid-state computing devices and circumvent the technological limitations of the current implementation of binary logic.

  13. Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge with tunable band characteristics for potential spintronic applications

    Directory of Open Access Journals (Sweden)

    Xiaotian Wang

    2017-11-01

    Full Text Available Magnetic Heusler compounds (MHCs have recently attracted great attention since these types of material provide novel functionalities in spintronic and magneto-electronic devices. Among the MHCs, some compounds have been predicted to be spin-filter semiconductors [also called magnetic semiconductors (MSs], spin-gapless semiconductors (SGSs or half-metals (HMs. In this work, by means of first-principles calculations, it is demonstrated that rare earth-based equiatomic quaternary Heusler (EQH compounds with the formula MCoVZ (M = Lu, Y; Z = Si, Ge are new spin-filter semiconductors with total magnetic moments of 3 µB. Furthermore, under uniform strain, there are physical transitions from spin-filter semiconductor (MS → SGS → HM for EQH compounds with the formula LuCoVZ, and from HM → SGS → MS → SGS → HM for EQH compounds with the formula YCoVZ. Remarkably, for YCoVZ EQH compounds there are not only diverse physical transitions, but also different types of spin-gapless feature that can be observed with changing lattice constants. The structural stability of these four EQH compounds is also examined from the points of view of formation energy, cohesive energy and mechanical behaviour. This work is likely to inspire consideration of rare earth-based EQH compounds for application in future spintronic and magneto-electronic devices.

  14. Nanoscale piezoelectric vibration energy harvester design

    Science.gov (United States)

    Foruzande, Hamid Reza; Hajnayeb, Ali; Yaghootian, Amin

    2017-09-01

    Development of new nanoscale devices has increased the demand for new types of small-scale energy resources such as ambient vibrations energy harvesters. Among the vibration energy harvesters, piezoelectric energy harvesters (PEHs) can be easily miniaturized and fabricated in micro and nano scales. This change in the dimensions of a PEH leads to a change in its governing equations of motion, and consequently, the predicted harvested energy comparing to a macroscale PEH. In this research, effects of small scale dimensions on the nonlinear vibration and harvested voltage of a nanoscale PEH is studied. The PEH is modeled as a cantilever piezoelectric bimorph nanobeam with a tip mass, using the Euler-Bernoulli beam theory in conjunction with Hamilton's principle. A harmonic base excitation is applied as a model of the ambient vibrations. The nonlocal elasticity theory is used to consider the size effects in the developed model. The derived equations of motion are discretized using the assumed-modes method and solved using the method of multiple scales. Sensitivity analysis for the effect of different parameters of the system in addition to size effects is conducted. The results show the significance of nonlocal elasticity theory in the prediction of system dynamic nonlinear behavior. It is also observed that neglecting the size effects results in lower estimates of the PEH vibration amplitudes. The results pave the way for designing new nanoscale sensors in addition to PEHs.

  15. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  16. Rocket Science at the Nanoscale.

    Science.gov (United States)

    Li, Jinxing; Rozen, Isaac; Wang, Joseph

    2016-06-28

    Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

  17. Nanoscale thermal transport. II. 2003-2012

    Science.gov (United States)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-03-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

  18. Nanoscale thermal transport. II. 2003–2012

    International Nuclear Information System (INIS)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-01-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and

  19. Ferroelectric crystals for photonic applications including nanoscale fabrication and characterization techniques

    CERN Document Server

    Ferraro, Pietro; De Natale, Paolo

    2015-01-01

    This book details the latest achievements in ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. It combines basic research of magnetic materials with device and production orientation.

  20. Common Principles of Molecular Electronics and Nanoscale Electrochemistry.

    Science.gov (United States)

    Bueno, Paulo Roberto

    2018-05-24

    The merging of nanoscale electronics and electrochemistry can potentially modernize the way electronic devices are currently engineered or constructed. It is well known that the greatest challenges will involve not only miniaturizing and improving the performance of mobile devices, but also manufacturing reliable electrical vehicles, and engineering more efficient solar panels and energy storage systems. These are just a few examples of how technological innovation is dependent on both electrochemical and electronic elements. This paper offers a conceptual discussion of this central topic, with particular focus on the impact that uniting physical and chemical concepts at a nanoscale could have on the future development of electroanalytical devices. The specific example to which this article refers pertains to molecular diagnostics, i.e., devices that employ physical and electrochemical concepts to diagnose diseases.

  1. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  2. Synthesis, dynamics and photophysics of nanoscale systems

    Science.gov (United States)

    Mirkovic, Tihana

    The emerging field of nanotechnology, which spans diverse areas such as nanoelectronics, medicine, chemical and pharmaceutical industries, biotechnology and computation, focuses on the development of devices whose improved performance is based on the utilization of self-assembled nanoscale components exhibiting unique properties owing to their miniaturized dimensions. The first phase in the conception of such multifunctional devices based on integrated technologies requires the study of basic principles behind the functional mechanism of nanoscale components, which could originate from individual nanoobjects or result as a collective behaviour of miniaturized unit structures. The comprehensive studies presented in this thesis encompass the mechanical, dynamical and photophysical aspects of three nanoscale systems. A newly developed europium sulfide nanocrystalline material is introduced. Advances in synthetic methods allowed for shape control of surface-functionalized EuS nanocrystals and the fabrication of multifunctional EuS-CdSe hybrid particles, whose unique structural and optical properties hold promise as useful attributes of integrated materials in developing technologies. A comprehensive study based on a new class of multifunctional nanomaterials, derived from the basic unit of barcoded metal nanorods is presented. Their chemical composition affords them the ability to undergo autonomous motion in the presence of a suitable fuel. The nature of their chemically powered self-propulsion locomotion was investigated, and plausible mechanisms for various motility modes were presented. Furthermore functionalization of striped metallic nanorods has been realized through the incorporation of chemically controlled flexible hinges displaying bendable properties. The structural aspect of the light harvesting machinery of a photosynthetic cryptophyte alga, Rhodomonas CS24, and the mobility of the antenna protein, PE545, in vivo were investigated. Information obtained

  3. Light-matter interaction physics and engineering at the nanoscale

    CERN Document Server

    Weiner, John

    2013-01-01

    This book draws together the essential elements of classical electrodynamics, surface wave physics, plasmonic materials, and circuit theory of electrical engineering to provide insight into the essential physics of nanoscale light-matter interaction and to provide design methodology for practical nanoscale plasmonic devices. A chapter on classical and quantal radiation also highlights the similarities (and differences) between the classical fields of Maxwell's equations and the wave functions of Schrodinger's equation. The aim of this chapter is to provide a semiclassical picture of atomic absorption and emission of radiation, lending credence and physical plausibility to the "rules" of standard wave-mechanical calculations.

  4. Improving Neural Recording Technology at the Nanoscale

    Science.gov (United States)

    Ferguson, John Eric

    Neural recording electrodes are widely used to study normal brain function (e.g., learning, memory, and sensation) and abnormal brain function (e.g., epilepsy, addiction, and depression) and to interface with the nervous system for neuroprosthetics. With a deep understanding of the electrode interface at the nanoscale and the use of novel nanofabrication processes, neural recording electrodes can be designed that surpass previous limits and enable new applications. In this thesis, I will discuss three projects. In the first project, we created an ultralow-impedance electrode coating by controlling the nanoscale texture of electrode surfaces. In the second project, we developed a novel nanowire electrode for long-term intracellular recordings. In the third project, we created a means of wirelessly communicating with ultra-miniature, implantable neural recording devices. The techniques developed for these projects offer significant improvements in the quality of neural recordings. They can also open the door to new types of experiments and medical devices, which can lead to a better understanding of the brain and can enable novel and improved tools for clinical applications.

  5. Enabling complex nanoscale pattern customization using directed self-assembly.

    Science.gov (United States)

    Doerk, Gregory S; Cheng, Joy Y; Singh, Gurpreet; Rettner, Charles T; Pitera, Jed W; Balakrishnan, Srinivasan; Arellano, Noel; Sanders, Daniel P

    2014-12-16

    Block copolymer directed self-assembly is an attractive method to fabricate highly uniform nanoscale features for various technological applications, but the dense periodicity of block copolymer features limits the complexity of the resulting patterns and their potential utility. Therefore, customizability of nanoscale patterns has been a long-standing goal for using directed self-assembly in device fabrication. Here we show that a hybrid organic/inorganic chemical pattern serves as a guiding pattern for self-assembly as well as a self-aligned mask for pattern customization through cotransfer of aligned block copolymer features and an inorganic prepattern. As informed by a phenomenological model, deliberate process engineering is implemented to maintain global alignment of block copolymer features over arbitrarily shaped, 'masking' features incorporated into the chemical patterns. These hybrid chemical patterns with embedded customization information enable deterministic, complex two-dimensional nanoscale pattern customization through directed self-assembly.

  6. Nanoscale shape-memory alloys for ultrahigh mechanical damping.

    Science.gov (United States)

    San Juan, Jose; Nó, Maria L; Schuh, Christopher A

    2009-07-01

    Shape memory alloys undergo reversible transformations between two distinct phases in response to changes in temperature or applied stress. The creation and motion of the internal interfaces between these phases during such transformations dissipates energy, making these alloys effective mechanical damping materials. Although it has been shown that reversible phase transformations can occur in nanoscale volumes, it is not known whether these transformations have a sample size dependence. Here, we demonstrate that the two phases responsible for shape memory in Cu-Al-Ni alloys are more stable in nanoscale pillars than they are in the bulk. As a result, the pillars show a damping figure of merit that is substantially higher than any previously reported value for a bulk material, making them attractive for damping applications in nanoscale and microscale devices.

  7. Nanoscale waveguiding methods

    Directory of Open Access Journals (Sweden)

    Wang Chia-Jean

    2007-01-01

    Full Text Available AbstractWhile 32 nm lithography technology is on the horizon for integrated circuit (IC fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

  8. Direct Probing of Polarization Charge at Nanoscale Level

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Owoong [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering; Seol, Daehee [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering; Lee, Dongkyu [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Han, Hee [Korea Research Inst. of Standards and Science (KRISS), Daejeon (South Korea); Lindfors-Vrejoiu, Ionela [Univ. of Cologne (Germany). Physics Inst.; Lee, Woo [Korea Research Inst. of Standards and Science (KRISS), Daejeon (South Korea); Jesse, Stephen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Lee, Ho Nyung [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Alexe, Marin [Univ. of Warwick, Coventry (United Kingdom). Dept. of Physics; Kim, Yunseok [Sungkyunkwan Univ., Suwon (Republic of Korea). School of Advanced Materials and Engineering

    2017-11-14

    Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm-2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.

  9. Nanoscale displacement sensing using microfabricated variable-inductance planar coils

    Science.gov (United States)

    Coskun, M. Bulut; Thotahewa, Kasun; Ying, York-Sing; Yuce, Mehmet; Neild, Adrian; Alan, Tuncay

    2013-09-01

    Microfabricated spiral inductors were employed for nanoscale displacement detection, suitable for use in implantable pressure sensor applications. We developed a variable inductor sensor consisting of two coaxially positioned planar coils connected in series to a measurement circuit. The devices were characterized by varying the air gap between the coils hence changing the inductance, while a Colpitts oscillator readout was used to obtain corresponding frequencies. Our approach shows significant advantages over existing methodologies combining a displacement resolution of 17 nm and low hysteresis (0.15%) in a 1 × 1 mm2 device. We show that resolution could be further improved by shrinking the device's lateral dimensions.

  10. Visualizing copper assisted graphene growth in nanoscale

    Science.gov (United States)

    Rosmi, Mohamad Saufi; Yusop, Mohd Zamri; Kalita, Golap; Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki

    2014-01-01

    Control synthesis of high quality large-area graphene on transition metals (TMs) by chemical vapor deposition (CVD) is the most fascinating approach for practical device applications. Interaction of carbon atoms and TMs is quite critical to obtain graphene with precise layer number, crystal size and structure. Here, we reveal a solid phase reaction process to achieve Cu assisted graphene growth in nanoscale by in-situ transmission electron microscope (TEM). Significant structural transformation of amorphous carbon nanofiber (CNF) coated with Cu is observed with an applied potential in a two probe system. The coated Cu particle recrystallize and agglomerate toward the cathode with applied potential due to joule heating and large thermal gradient. Consequently, the amorphous carbon start crystallizing and forming sp2 hybridized carbon to form graphene sheet from the tip of Cu surface. We observed structural deformation and breaking of the graphene nanoribbon with a higher applied potential, attributing to saturated current flow and induced Joule heating. The observed graphene formation in nanoscale by the in-situ TEM process can be significant to understand carbon atoms and Cu interaction. PMID:25523645

  11. Nanoscale Science and Engineering in Romania

    International Nuclear Information System (INIS)

    Dascalu, Dan; Topa, Vladimir; Kleps, Irina

    2001-01-01

    In spite of difficult working conditions and with very low financial support, many groups from Romania are involved in emerging fields, such as the nanoscale science and technology. Until the last years, this activity was developed without a central coordination and without many interactions between these research groups. In the year 2000, some of the institutes and universities active in the nanotechnology field in Romania founded the MICRONANOTECH network. The aim of this paper is to emphasize the main activities and results of the Romanian groups working in this novel domain. Most of the groups are deal with the nanomaterial technology and only few of them have activities in nanostructure science and engineering, in new concepts and device modeling and technology. This paper describes the nanotechnology research development in two of the most significant institutes from Romania: Centre for Nanotechnologies from National Institute for Research and Development in Microtehnologies (IMT-Bucharest) and from National Institute for Research and Development in Materials Physics (INCD-FM), Magurele. The Romanian research results in nanotechnology field were presented in numerous papers presented in international conferences or published in national and international journals. They are also presented in patents, international awards and fellowships. The research effort and financial support are outlined. Some future trends of the Romanian nanoscale science and technology research are also described

  12. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  13. Highly repeatable nanoscale phase coexistence in vanadium dioxide films

    Science.gov (United States)

    Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

    2018-02-01

    It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

  14. NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

    Science.gov (United States)

    This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

  15. Monopole and topological electron dynamics in adiabatic spintronic and graphene systems

    International Nuclear Information System (INIS)

    Tan, S.G.; Jalil, M.B.A.; Fujita, T.

    2010-01-01

    A unified theoretical treatment is presented to describe the physics of electron dynamics in semiconductor and graphene systems. Electron spin's fast alignment with the Zeeman magnetic field (physical or effective) is treated as a form of adiabatic spin evolution which necessarily generates a monopole in magnetic space. One could transform this monopole into the physical and intuitive topological magnetic fields in the useful momentum (K) or real spaces (R). The physics of electron dynamics related to spin Hall, torque, oscillations and other technologically useful spinor effects can be inferred from the topological magnetic fields in spintronic, graphene and other SU(2) systems.

  16. Energy Conversion at Micro and Nanoscale

    International Nuclear Information System (INIS)

    Gammaitoni, Luca

    2014-01-01

    Energy management is considered a task of strategic importance in contemporary society. It is a common fact that the most successful economies of the planet are the economies that can transform and use large quantities of energy. In this talk we will discuss the role of energy with specific attention to the processes that happens at micro and nanoscale. The description of energy conversion processes at these scales requires approaches that go way beyond the standard equilibrium termodynamics of macroscopic systems. In this talk we will address from a fundamental point of view the physics of the dissipation of energy and will focus our attention to the energy transformation processes that take place in the modern micro and nano information and communication devices

  17. Nanoscale decomposition of Nb-Ru-O

    Science.gov (United States)

    Music, Denis; Geyer, Richard W.; Chen, Yen-Ting

    2016-11-01

    A correlative theoretical and experimental methodology has been employed to explore the decomposition of amorphous Nb-Ru-O at elevated temperatures. Density functional theory based molecular dynamics simulations reveal that amorphous Nb-Ru-O is structurally modified within 10 ps at 800 K giving rise to an increase in the planar metal - oxygen and metal - metal population and hence formation of large clusters, which signifies atomic segregation. The driving force for this atomic segregation process is 0.5 eV/atom. This is validated by diffraction experiments and transmission electron microscopy of sputter-synthesized Nb-Ru-O thin films. Room temperature samples are amorphous, while at 800 K nanoscale rutile RuO2 grains, self-organized in an amorphous Nb-O matrix, are observed, which is consistent with our theoretical predictions. This amorphous/crystalline interplay may be of importance for next generation of thermoelectric devices.

  18. Facilitation of Nanoscale Thermal Transport by Hydrogen Bonds

    OpenAIRE

    Zhang, Lin

    2017-01-01

    Thermal transport performance at the nanoscale and/or of biomaterials is essential to the success of many new technologies including nanoelectronics, biomedical devices, and various nanocomposites. Due to complicated microstructures and chemical bonding, thermal transport process in these materials has not been well understood yet. In terms of chemical bonding, it is well known that the strength of atomic bonding can significantly affect thermal transport across materials or across interfaces...

  19. Interplay of Peltier and Seebeck Effects in Nanoscale Nonlocal Spin Valves

    NARCIS (Netherlands)

    Bakker, F. L.; Slachter, A.; Adam, J-P; van Wees, B. J.

    2010-01-01

    We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second, and third

  20. Nanoscale biomemory composed of recombinant azurin on a nanogap electrode

    International Nuclear Information System (INIS)

    Chung, Yong-Ho; Lee, Taek; Choi, Jeong-Woo; Park, Hyung Ju; Yun, Wan Soo; Min, Junhong

    2013-01-01

    We fabricate a nanoscale biomemory device composed of recombinant azurin on nanogap electrodes. For this, size-controllable nanogap electrodes are fabricated by photolithography, electron beam lithography, and surface catalyzed chemical deposition. Moreover, we investigate the effect of gap distance to optimize the size of electrodes for a biomemory device and explore the mechanism of electron transfer from immobilized protein to a nanogap counter-electrode. As the distance of the nanogap electrode is decreased in the nanoscale, the absolute current intensity decreases according to the distance decrement between the electrodes due to direct electron transfer, in contrast with the diffusion phenomenon of a micro-electrode. The biomemory function is achieved on the optimized nanogap electrode. These results demonstrate that the fabricated nanodevice composed of a nanogap electrode and biomaterials provides various advantages such as quantitative control of signals and exclusion of environmental effects such as noise. The proposed bioelectronics device, which could be mass-produced easily, could be applied to construct a nanoscale bioelectronics system composed of a single biomolecule. (paper)

  1. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    Science.gov (United States)

    Shahrjerdi, Davood; Bedell, Stephen W

    2013-01-09

    In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

  2. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  3. Nanoscale Characterization for the Classroom

    International Nuclear Information System (INIS)

    Carroll, D.L.

    1999-01-01

    This report describes the development of a semester course in 'nano-scale characterization'. The interdisciplinary course is opened to both advanced undergraduate and graduate students with a standard undergraduate preparation in Materials Science, Chemistry, or Physics. The approach is formal rather than the typical 'research seminar' and has a laboratory component

  4. Quantum Transport Simulations of Nanoscale Materials

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2016-01-07

    Nanoscale materials have many potential advantages because of their quantum confinement, cost and producibility by low-temperature chemical methods. Advancement of theoretical methods as well as the availability of modern high-performance supercomputers allow us to control and exploit their microscopic properties at the atomic scale, hence making it possible to design novel nanoscale molecular devices with interesting features (e.g switches, rectifiers, negative differential conductance, and high magnetoresistance). In this thesis, state-of-the-art theoretical calculations have been performed for the quantum transport properties of nano-structured materials within the framework of Density Functional Theory (DFT) and the Nonequilibrium Green\\'s Function (NEGF) formalism. The switching behavior of a dithiolated phenylene-vinylene oligomer sandwiched between Au(111) electrodes is investigated. The molecule presents a configurational bistability, which can be exploited in constructing molecular memories, switches, and sensors. We find that protonation of the terminating thiol groups is at the origin of the change in conductance. H bonding at the thiol group weakens the S-Au bond, and thus lowers the conductance. Our results allow us to re-interpret the experimental data originally attributing the conductance reduction to H dissociation. Also examined is current-induced migration of atoms in nanoscale devices that plays an important role for device operation and breakdown. We studied the migration of adatoms and defects in graphene and carbon nanotubes under finite bias. We demonstrate that current-induced forces within DFT are non-conservative, which so far has only been shown for model systems, and can lower migration barrier heights. Further, we investigated the quantum transport behavior of an experimentally observed diblock molecule by varying the amounts of phenyl (donor) and pyrimidinyl (acceptor) rings under finite bias. We show that a tandem configuration of

  5. Nanoscale electromechanical parametric amplifier

    Science.gov (United States)

    Aleman, Benjamin Jose; Zettl, Alexander

    2016-09-20

    This disclosure provides systems, methods, and apparatus related to a parametric amplifier. In one aspect, a device includes an electron source electrode, a counter electrode, and a pumping electrode. The electron source electrode may include a conductive base and a flexible conductor. The flexible conductor may have a first end and a second end, with the second end of the flexible conductor being coupled to the conductive base. A cross-sectional dimension of the flexible conductor may be less than about 100 nanometers. The counter electrode may be disposed proximate the first end of the flexible conductor and spaced a first distance from the first end of the flexible conductor. The pumping electrode may be disposed proximate a length of the flexible conductor and spaced a second distance from the flexible conductor.

  6. Electron tunneling in nanoscale electrodes for battery applications

    Science.gov (United States)

    Yamada, Hidenori; Narayanan, Rajaram; Bandaru, Prabhakar R.

    2018-03-01

    It is shown that the electrical current that may be obtained from a nanoscale electrochemical system is sensitive to the dimensionality of the electrode and the density of states (DOS). Considering the DOS of lower dimensional systems, such as two-dimensional graphene, one-dimensional nanotubes, or zero-dimensional quantum dots, yields a distinct variation of the current-voltage characteristics. Such aspects go beyond conventional Arrhenius theory based kinetics which are often used in experimental interpretation. The obtained insights may be adapted to other devices, such as solid-state batteries. It is also indicated that electron transport in such devices may be considered through electron tunneling.

  7. Heat transfer across the interface between nanoscale solids and gas.

    Science.gov (United States)

    Cheng, Chun; Fan, Wen; Cao, Jinbo; Ryu, Sang-Gil; Ji, Jie; Grigoropoulos, Costas P; Wu, Junqiao

    2011-12-27

    When solid materials and devices scale down in size, heat transfer from the active region to the gas environment becomes increasingly significant. We show that the heat transfer coefficient across the solid-gas interface behaves very differently when the size of the solid is reduced to the nanoscale, such as that of a single nanowire. Unlike for macroscopic solids, the coefficient is strongly pressure dependent above ∼10 Torr, and at lower pressures it is much higher than predictions of the kinetic gas theory. The heat transfer coefficient was measured between a single, free-standing VO(2) nanowire and surrounding air using laser thermography, where the temperature distribution along the VO(2) nanowire was determined by imaging its domain structure of metal-insulator phase transition. The one-dimensional domain structure along the nanowire results from the balance between heat generation by the focused laser and heat dissipation to the substrate as well as to the surrounding gas, and thus serves as a nanoscale power-meter and thermometer. We quantified the heat loss rate across the nanowire-air interface, and found that it dominates over all other heat dissipation channels for small-diameter nanowires near ambient pressure. As the heat transfer across the solid-gas interface is nearly independent of the chemical identity of the solid, the results reveal a general scaling relationship for gaseous heat dissipation from nanostructures of all solid materials, which is applicable to nanoscale electronic and thermal devices exposed to gaseous environments.

  8. Nanoscale capacitance: A quantum tight-binding model

    Science.gov (United States)

    Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

    2017-01-01

    Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

  9. Investigation of Short Channel Effect on Vertical Structures in Nanoscale MOSFET

    Directory of Open Access Journals (Sweden)

    Munawar A. Riyadi

    2009-12-01

    Full Text Available The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel length (Lch is demonstrated with the help of numerical tools. The evaluation of short channel effect (SCE parameters, i.e. threshold voltage roll-off, subthreshold swing (SS, drain induced barrier lowering (DIBL and leakage current shows the considerable advantages as well as its thread-off in implementing the structure, in particular for nanoscale regime.

  10. Creating nanoscale emulsions using condensation.

    Science.gov (United States)

    Guha, Ingrid F; Anand, Sushant; Varanasi, Kripa K

    2017-11-08

    Nanoscale emulsions are essential components in numerous products, ranging from processed foods to novel drug delivery systems. Existing emulsification methods rely either on the breakup of larger droplets or solvent exchange/inversion. Here we report a simple, scalable method of creating nanoscale water-in-oil emulsions by condensing water vapor onto a subcooled oil-surfactant solution. Our technique enables a bottom-up approach to forming small-scale emulsions. Nanoscale water droplets nucleate at the oil/air interface and spontaneously disperse within the oil, due to the spreading dynamics of oil on water. Oil-soluble surfactants stabilize the resulting emulsions. We find that the oil-surfactant concentration controls the spreading behavior of oil on water, as well as the peak size, polydispersity, and stability of the resulting emulsions. Using condensation, we form emulsions with peak radii around 100 nm and polydispersities around 10%. This emulsion formation technique may open different routes to creating emulsions, colloidal systems, and emulsion-based materials.

  11. Nanoscale thermoelectric materials

    International Nuclear Information System (INIS)

    Failamani, F.

    2015-01-01

    Thermoelectric (TE) materials directly convert thermal energy to electrical energy when subjected to a temperature gradient, whereas if electricity is applied to thermoelectric materials, a temperature gradient is formed. The performance of thermoelectric materials is characterized by a dimensionless figure of merit (ZT = S2T/ρλ), which consists of three parameters, Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (λ). To achieve good performance of thermoelectric power generation and cooling, ZT's of thermoelectric materials must be as high as possible, preferably above unity. This thesis comprises three main parts, which are distributed into six chapters: (i) nanostructuring to improve TE performance of trivalent rare earth-filled skutterudites (chapter 1 and 2), (ii) interactions of skutterudite thermolectrics with group V metals as potential electrode or diffusion barrier for TE devices (chapter 3 and 4), and (iii) search for new materials for TE application (chapter 5 and 6). Addition of secondary phases, especially nano sized phases can cause additional reduction of the thermal conductivity of a filled skutterudite which improves the figure of merit (ZT) of thermoelectric materials. In chapter 1 we investigated the effect of various types of secondary phases (silicides, borides, etc.) on the TE properties of trivalent rare earth filled Sb-based skutterudites as commercially potential TE materials. In this context the possibilty to introduce borides as nano-particles (via ball-milling in terms of a skutterudite/boride composite) is also elucidated in chapter 2. As a preliminary study, crystal structure of novel high temperature FeB-type phases found in the ternary Ta-{Ti,Zr,Hf,}-B systems were investigated. In case of Ti and Hf this phase is the high temperature stabilization of binary group IV metal monoborides, whereas single crystal study of (Ta,Zr)B proves that it is a true ternary phase as no stable monoboride exist in the

  12. Brillouin gain enhancement in nano-scale photonic waveguide

    Science.gov (United States)

    Nouri Jouybari, Soodabeh

    2018-05-01

    The enhancement of stimulated Brillouin scattering in nano-scale waveguides has a great contribution in the improvement of the photonic devices technology. The key factors in Brillouin gain are the electrostriction force and radiation pressure generated by optical waves in the waveguide. In this article, we have proposed a new scheme of nano-scale waveguide in which the Brillouin gain is considerably improved compared to the previously-reported schemes. The role of radiation pressure in the Brillouin gain was much higher than the role of the electrostriction force. The Brillouin gain strongly depends on the structural parameters of the waveguide and the maximum value of 12127 W-1 m-1 is obtained for the Brillouin gain.

  13. Negative pressure characteristics of an evaporating meniscus at nanoscale

    Directory of Open Access Journals (Sweden)

    Maroo Shalabh

    2011-01-01

    Full Text Available Abstract This study aims at understanding the characteristics of negative liquid pressures at the nanoscale using molecular dynamics simulation. A nano-meniscus is formed by placing liquid argon on a platinum wall between two nano-channels filled with the same liquid. Evaporation is simulated in the meniscus by increasing the temperature of the platinum wall for two different cases. Non-evaporating films are obtained at the center of the meniscus. The liquid film in the non-evaporating and adjacent regions is found to be under high absolute negative pressures. Cavitation cannot occur in these regions as the capillary height is smaller than the critical cavitation radius. Factors which determine the critical film thickness for rupture are discussed. Thus, high negative liquid pressures can be stable at the nanoscale, and utilized to create passive pumping devices as well as significantly enhance heat transfer rates.

  14. Rashba and Dresselhaus Couplings in Halide Perovskites: Accomplishments and Opportunities for Spintronics and Spin-Orbitronics.

    Science.gov (United States)

    Kepenekian, Mikaël; Even, Jacky

    2017-07-20

    In halide hybrid organic-inorganic perovskites (HOPs), spin-orbit coupling (SOC) presents a well-documented large influence on band structure. However, SOC may also present more exotic effects, such as Rashba and Dresselhaus couplings. In this Perspective, we start by recalling the main features of this effect and what makes HOP materials ideal candidates for the generation and tuning of spin-states. Then, we detail the main spectroscopy techniques able to characterize these effects and their application to HOPs. Finally, we discuss potential applications in spintronics and in spin-orbitronics in those nonmagnetic systems, which would complete the skill set of HOPs and perpetuate their ride on the crest of the wave of popularity started with optoelectronics and photovoltaics.

  15. Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study

    International Nuclear Information System (INIS)

    Simeoni, M; Santucci, S; Picozzi, S; Delley, B

    2006-01-01

    The structural and electronic properties (in terms of Mulliken charges, density of states and band structures) of pristine and defective (10,0) AlN nanotubes have been calculated within density functional theory. The results show that, in several defective tubes, a spontaneous spin-polarization arises, due to the presence of spin-split flat bands close to the Fermi level, with a strong localization of the corresponding electronic states and of the magnetic moments. The highest positive spin-magnetization (3 μ B per cell) is found for the vacancy in the Al site, while the other magnetic tubes (the vacancy in N, C and O substitutional for N and Al, respectively) show a magnetization of only 1 μ B per cell. The spontaneous magnetization of some defective tubes might open the way to their use for spintronic applications

  16. Manipulating spin in organic spintronics : probing the interplay between the electronic and nuclear spins in organic semiconductors

    NARCIS (Netherlands)

    Bobbert, P.A.

    2014-01-01

    The growing interest in spin manipulation in the field of spin electronics, or "spintronics," is due to the wealth of exciting possibilities that it offers in areas of magnetic sensing, new types of information storage, low-power electronics, and quantum information processing. Nuclear spin

  17. Nanoelectronic device applications handbook

    CERN Document Server

    Morris, James E

    2013-01-01

    Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal-oxide-semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world.These include: Nanoscale advance

  18. 2D Quantum Mechanical Study of Nanoscale MOSFETs

    Science.gov (United States)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

    2000-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  19. Structure and properties of quarternary and tetragonal Heusler compounds for spintronics and spin transver torque applications

    Energy Technology Data Exchange (ETDEWEB)

    Zamani, Vajiheh Alijani

    2012-03-07

    This work is divided into two parts: part 1 is focused on the prediction of half-metallicity in quaternary Heusler compounds and their potential for spintronic applications and part 2 on the structural properties of Mn{sub 2}-based Heusler alloys and tuning the magnetism of them from soft to hard-magnetic for spin-transfer torque applications. In part 1, three different series of quaternary Heusler compounds are investigated, XX'MnGa (X=Cu, Ni and X'=Fe,Co), CoFeMnZ (Z=Al,Ga,Si,Ge), and Co{sub 2-x}Rh{sub x}MnZ (Z=Ga,Sn,Sb). All of these quaternary compounds except CuCoMnGa are predicted to be half-metallic ferromagnets by ab-initio electronic structure calculations. In the XX'MnGa class of compounds, NiFeMnGa has a low Curie temperature for technological applications but NiCoMnGa with a high spin polarization, magnetic moment, and Curie temperature is an interesting new material for spintronics applications. All CoFeMnZ compounds exhibit a cubic Heusler structur and their magnetic moments are in fair agreement with the Slater-Pauling rule indicating the halfmetallicity and high spin polarization required for spintronics applications. Their high Curie temperatures make them suitable for utilization at room temperature and above. The structural investigation revealed that the crystal structure of all Co{sub 2-x}Rh{sub x}MnZ compounds aside from CoRhMnSn exhibit different types of anti-site disorder. The magnetic moments of the disordered compounds deviate from the Slater-Pauling rule indicating that 100% spin polarization are not realized in CoRhMnGa, CoRhMnSb, and Co{sub 0.5}Rh{sub 1.5}MnSb. Exchange of one Co in Co{sub 2}MnSn by Rh results in the stable, well-ordered compound CoRhMnSn. This exchange of one of the magnetic Co atoms by a non-magnetic Rh atom keeps the magnetic properties and half-metallicity intact. In part 2, two series of Mn{sub 2}-based Heusler alloys are investigated, Mn{sub 3-x}Co{sub x}Ga and Mn{sub 2-x}Rh{sub 1+x}Sn. It has been

  20. EDITORIAL: Mastering matter at the nanoscale Mastering matter at the nanoscale

    Science.gov (United States)

    Forchel, Alfred

    2009-10-01

    In the early 1980s, the development of scanning probe techniques gave scientists a titillating view of surfaces with nanometre resolution, igniting activity in research at the nanoscale. Images at unprecedented resolution were unveiled with the aid of various types of nanosized tips, including the scanning tunnelling (Binnig G, Rohrer H, Gerber C and Weibel E 1982 Appl. Phys. Lett. 40 178-80) the atomic force (Binnig G, Quate C F and Gerber C 1986 Phys. Rev. Lett. 56 930-3) and the near-field scanning microscopes (Dürig U, Pohl D W and Rohner F 1986 J. Appl. Phys. 59 3318-27). From the magnitude of tunnelling currents between conductive surfaces and van der Waals forces between dielectrics to the non-propagating evanescent fields at illuminated surfaces, a range of signal responses were harnessed enabling conductive, dielectric and even biological systems to be imaged. But it may be argued that it was the ability to manipulate matter at the nanoscale that really empowered nanotechnology. From the inception of the scanning probe revolution, these probes used to image nanostructures were also discovered to be remarkable tools for the manipulation of nanoparticles. Insights into the mechanism behind such processes were reported by a team of researchers at UCLA over ten years ago in 1998 (Baur C et al 1998 Nanotechnology 9 360-4). In addition, lithography and etching methods of patterning continue to evolve into ever more sophisticated techniques for exerting design over the structure of matter at the nanoscale. These so-called top-down methods, such as photolithography, electron-beam lithography and nanoimprint lithography, now provide control over features with a resolution of a few nanometres. Bottom-up fabrication techniques that exploit the self-assembly of constituents into desired structures have also stimulated extensive research. These techniques, such as the electrochemically assembled quantum-dot arrays reported by a team of US reasearchers over ten years

  1. Investigation of graphene-based nanoscale radiation sensitive materials

    Science.gov (United States)

    Robinson, Joshua A.; Wetherington, Maxwell; Hughes, Zachary; LaBella, Michael, III; Bresnehan, Michael

    2012-06-01

    Current state-of-the-art nanotechnology offers multiple benefits for radiation sensing applications. These include the ability to incorporate nano-sized radiation indicators into widely used materials such as paint, corrosion-resistant coatings, and ceramics to create nano-composite materials that can be widely used in everyday life. Additionally, nanotechnology may lead to the development of ultra-low power, flexible detection systems that can be embedded in clothing or other systems. Graphene, a single layer of graphite, exhibits exceptional electronic and structural properties, and is being investigated for high-frequency devices and sensors. Previous work indicates that graphene-oxide (GO) - a derivative of graphene - exhibits luminescent properties that can be tailored based on chemistry; however, exploration of graphene-oxide's ability to provide a sufficient change in luminescent properties when exposed to gamma or neutron radiation has not been carried out. We investigate the mechanisms of radiation-induced chemical modifications and radiation damage induced shifts in luminescence in graphene-oxide materials to provide a fundamental foundation for further development of radiation sensitive detection architectures. Additionally, we investigate the integration of hexagonal boron nitride (hBN) with graphene-based devices to evaluate radiation induced conductivity in nanoscale devices. Importantly, we demonstrate the sensitivity of graphene transport properties to the presence of alpha particles, and discuss the successful integration of hBN with large area graphene electrodes as a means to provide the foundation for large-area nanoscale radiation sensors.

  2. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization.

    Science.gov (United States)

    Berger, Andrew J; Page, Michael R; Jacob, Jan; Young, Justin R; Lewis, Jim; Wenzel, Lothar; Bhallamudi, Vidya P; Johnston-Halperin, Ezekiel; Pelekhov, Denis V; Hammel, P Chris

    2014-12-01

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  3. Special Technology Area Review on Spintronics. Report of Department of Defense Advisory Group on Electron Devices Working Group B (Microelectronics)

    National Research Council Canada - National Science Library

    Dunbridge, Barry; Palkuti, Les; Wolf, Stuart

    2004-01-01

    ...) as it applies to nonvolatile memories and quantum-based logic and computing. In addition, the information provided at the STAR is expected to be of use to the Services and Department of Defense (DoD...

  4. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  5. New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

    International Nuclear Information System (INIS)

    Fong, C Y; Qian, M C

    2004-01-01

    The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

  6. P-type zinc oxide spinels: application to transparent conductors and spintronics

    International Nuclear Information System (INIS)

    Stoica, Maria; S Lo, Cynthia

    2014-01-01

    We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB 2 O 4 , where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo 2 O 4 spinel. These new materials exhibit spin polarization, which is useful for spintronics applications, and broad conductivity maxima near the valence band edge that indicate good p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure near the band edge of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu 2 O 4 exhibits high electrical conductivities in the p-doping region near the valence band edge that, at σ=2×10 4  S cm −1 , are twice the maximum found for ZnCo 2 O 4 , a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor. (paper)

  7. Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

    Science.gov (United States)

    Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

    2016-07-21

    Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

  8. Nanoscale Engineering of Multiferroic Hybrid Composites for Micro- and Nano-scale Devices

    Science.gov (United States)

    2012-09-14

    presented in Fig.1. In the case of laminate structures we proposed to use AIN as a piezoelectric phase [publication 4]. Although commonly used Pb...16-19, 2009, Zhengzhou, China. 30)L. Malkinski, "Magnetic heterostructures with convoluted architectures" (invited) 7th Workshop on Multifunction

  9. In Situ TEM Creation and Electrical Characterization of Nanowire Devices

    DEFF Research Database (Denmark)

    Kallesøe, Christian; Wen, Cheng-Yen; Booth, Timothy J.

    2012-01-01

    bridge devices in situ and relate these to the structure. We also describe processes to modify the contact and the nanowire surface after device formation. The technique we describe allows the direct analysis of the processes taking place during device formation and use, correlating specific nanoscale......We demonstrate the observation and measurement of simple nanoscale devices over their complete lifecycle from creation to failure within a transmission electron microscope. Devices were formed by growing Si nanowires, using the vapor–liquid–solid method, to form bridges between Si cantilevers. We...... structural and electrical parameters on an individual device basis....

  10. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  11. Nanoscale biophysics of the cell

    CERN Document Server

    Ashrafuzzaman, Mohammad

    2018-01-01

    Macroscopic cellular structures and functions are generally investigated using biological and biochemical approaches. But these methods are no longer adequate when one needs to penetrate deep into the small-scale structures and understand their functions. The cell is found to hold various physical structures, molecular machines, and processes that require physical and mathematical approaches to understand and indeed manipulate them. Disorders in general cellular compartments, perturbations in single molecular structures, drug distribution therein, and target specific drug-binding, etc. are mostly physical phenomena. This book will show how biophysics has revolutionized our way of addressing the science and technology of nanoscale structures of cells, and also describes the potential for manipulating the events that occur in them.

  12. Nanoscale Mixing of Soft Solids

    International Nuclear Information System (INIS)

    Choi, Soo-Hyung; Lee, Sangwoo; Soto, Haidy E.; Lodge, Timothy P.; Bates, Frank S.

    2011-01-01

    Assessing the state of mixing on the molecular scale in soft solids is challenging. Concentrated solutions of micelles formed by self-assembly of polystyrene-block-poly(ethylene-alt-propylene) (PS-PEP) diblock copolymers in squalane (C 30 H 62 ) adopt a body-centered cubic (bcc) lattice, with glassy PS cores. Utilizing small-angle neutron scattering (SANS) and isotopic labeling ( 1 H and 2 H (D) polystyrene blocks) in a contrast-matching solvent (a mixture of squalane and perdeuterated squalane), we demonstrate quantitatively the remarkable fact that a commercial mixer can create completely random mixtures of micelles with either normal, PS(H), or deuterium-labeled, PS(D), cores on a well-defined bcc lattice. The resulting SANS intensity is quantitatively modeled by the form factor of a single spherical core. These results demonstrate both the possibility of achieving complete nanoscale mixing in a soft solid and the use of SANS to quantify the randomness.

  13. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Science.gov (United States)

    Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

    2008-03-01

    The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

  14. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    Science.gov (United States)

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  15. Smart Core-Shell Nanowire Architectures for Multifunctional Nanoscale Devices

    Science.gov (United States)

    2014-02-16

    E. Spanier, S. J. May. Optical absorption in epitaxial La [sub 1?x]Sr [sub x]FeO[sub 3] thin films, Applied Physics Letters, (02 2013): 0. doi...Coster, Gregory R. Soja , Craig L. Johnson, Rahul S. Joseph, Jonathan E. Spanier. Piezoresponse through a ferroelectric nanotube wall, Applied...20.00 Received Paper Y. J. Xie, M. Torres, J. E. Spanier, S. J. May, M D. Scafetta. Optical absorption in epitaxial La [sub 1?x]Sr [sub x]FeO[sub 3

  16. In Situ TEM Creation of Nanowire Devices

    DEFF Research Database (Denmark)

    Alam, Sardar Bilal

    Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

  17. Flexible spin-orbit torque devices

    International Nuclear Information System (INIS)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef

    2015-01-01

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging

  18. Flexible spin-orbit torque devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-12-21

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

  19. Symposium GC: Nanoscale Charge Transport in Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bommisetty, Venkat [Univ. of South Dakota, Vermillion, SD (United States)

    2011-06-23

    This paper provides a summary only and table of contents of the sessions. Excitonic solar cells, including all-organic, hybrid organic-inorganic and dye-sensitized solar cells (DSSCs), offer strong potential for inexpensive and large-area solar energy conversion. Unlike traditional inorganic semiconductor solar cells, where all the charge generation and collection processes are well understood, these excitonic solar cells contain extremely disordered structures with complex interfaces which results in large variations in nanoscale electronic properties and has a strong influence on carrier generation, transport, dissociation and collection. Detailed understanding of these processes is important for fabrication of highly efficient solar cells. Efforts to improve efficiency are underway at a large number of research groups throughout the world focused on inorganic and organic semiconductors, photonics, photophysics, charge transport, nanoscience, ultrafast spectroscopy, photonics, semiconductor processing, device physics, device structures, interface structure etc. Rapid progress in this multidisciplinary area requires strong synergetic efforts among researchers from diverse backgrounds. Such effort can lead to novel methods for development of new materials with improved photon harvesting and interfacial treatments for improved carrier transport, process optimization to yield ordered nanoscale morphologies with well defined electronic structures.

  20. Anomalous electromagnetic coupling via entanglement at the nanoscale

    International Nuclear Information System (INIS)

    Slepyan, Gregory; Boag, Amir; Mordachev, Vladimir; Sinkevich, Eugene; Maksimenko, Sergey; Kuzhir, Polina; Miano, Giovanni; Portnoi, Mikhail E; Maffucci, Antonio

    2017-01-01

    Understanding unwanted mutual interactions between devices at the nanoscale is crucial for the study of the electromagnetic compatibility in nanoelectronic and nanophotonic systems. Anomalous electromagnetic coupling (crosstalk) between nanodevices may arise from the combination of electromagnetic interaction and quantum entanglement. In this paper we study in detail the crosstalk between two identical nanodevices, each consisting of a quantum emitter (atom, quantum dot, etc), capacitively coupled to a pair of nanoelectrodes. Using the generalized susceptibility concept, the overall system is modeled as a two-port within the framework of the electrical circuit theory and it is characterized by the admittance matrix. We show that the entanglement changes dramatically the physical picture of the electromagnetic crosstalk. In particular, the excitation produced in one of the ports may be redistributed in equal parts between both the ports, in spite of the rather small electromagnetic interactions. Such an anomalous crosstalk is expected to appear at optical frequencies in lateral GaAs double quantum dots. A possible experimental set up is also discussed. The classical concepts of interference in the operation of electronic devices, which have been known since the early days of radio-communications and are associated with electromagnetic compatibility, should then be reconsidered at the nanoscale. (paper)

  1. Nanoscale electron manipulation in metals with intense THz electric fields

    Science.gov (United States)

    Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

    2018-03-01

    Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

  2. Nanoscale layer-selective readout of magnetization direction from a magnetic multilayer using a spin-torque oscillator

    International Nuclear Information System (INIS)

    Suto, Hirofumi; Nagasawa, Tazumi; Kudo, Kiwamu; Mizushima, Koichi; Sato, Rie

    2014-01-01

    Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions. Here we introduce a novel readout method for detecting the magnetization direction of a nanoscale magnet by use of a spin-torque oscillator (STO). The principles behind this method are dynamic dipolar coupling between an STO and a nanoscale magnet, and detection of ferromagnetic resonance (FMR) of this coupled system from the STO signal. Because the STO couples with a specific magnet by tuning the STO oscillation frequency to match its FMR frequency, this readout method can selectively determine the magnetization direction of the magnet. (papers)

  3. Injection and Scattering of Polarized Spins at Nanoscale Polymer Interfaces

    National Research Council Canada - National Science Library

    Epstein, Arthur J

    2004-01-01

    We made excellent progress several directions. We demonstrated that V[TCNE]̃2 is a room temperature fully spin polarized magnetic semiconductor of interest for spintronic applications, including spin valves...

  4. Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saikat [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Wang, Bo [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Cao, Ye [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for; Rae Cho, Myung [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Jae Shin, Yeong [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Mo Yang, Sang [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Sookmyung Women' s Univ., Seoul (Republic of Korea). Dept. of Physics; Wang, Lingfei [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kim, Minu [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials; Chen, Long-Qing [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Noh, Tae Won [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy

    2017-09-20

    Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implications for device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. Finally, the ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena and engineering multifunctional oxide devices.

  5. Nanoscale electron transport at the surface of a topological insulator

    Science.gov (United States)

    Bauer, Sebastian; Bobisch, Christian A.

    2016-04-01

    The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

  6. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    Science.gov (United States)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  7. Nanoscale science and nanotechnology education in Africa ...

    African Journals Online (AJOL)

    Nanoscale science and nanotechnology education in Africa: importance and ... field with its footing in chemistry, physics, molecular biology and engineering. ... career/business/development opportunities, risks and policy challenges that would ...

  8. Patterning high explosives at the nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Nafday, Omkar A.; Pitchimani, Rajasekar; Weeks, Brandon L. [Department of Chemical Engineering, Texas Tech University, Lubbock, TX 79409 (United States); Haaheim, Jason [NanoInk Inc., 8025 Lamon Ave., Skokie, IL 60077 (United States)

    2006-10-15

    For the first time, we have shown that spin coating and Dip pen nanolithography (DPN trademark) are simple methods of preparing energetic materials such as PETN and HMX on the nanoscale, requiring no heating of the energetic material. Nanoscale patterning has been demonstrated by the DPN method while continuous thin films were produced using the spin coating method. Results are presented for preparing continuous PETN thin films of nanometer thickness by the spin coating method and for controlling the architecture of arbitrary nanoscale patterns of PETN and HMX by the DPN method. These methods are simple for patterning energetic materials and can be extended beyond PETN and HMX, opening the door for fundamental studies at the nanoscale. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  9. Nanoscale drug delivery for targeted chemotherapy.

    Science.gov (United States)

    Xin, Yong; Huang, Qian; Tang, Jian-Qin; Hou, Xiao-Yang; Zhang, Pei; Zhang, Long Zhen; Jiang, Guan

    2016-08-28

    Despite significant improvements in diagnostic methods and innovations in therapies for specific cancers, effective treatments for neoplastic diseases still represent major challenges. Nanotechnology as an emerging technology has been widely used in many fields and also provides a new opportunity for the targeted delivery of cancer drugs. Nanoscale delivery of chemotherapy drugs to the tumor site is highly desirable. Recent studies have shown that nanoscale drug delivery systems not only have the ability to destroy cancer cells but may also be carriers for chemotherapy drugs. Some studies have demonstrated that delivery of chemotherapy via nanoscale carriers has greater therapeutic benefit than either treatment modality alone. In this review, novel approaches to nanoscale delivery of chemotherapy are described and recent progress in this field is discussed. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  10. Nanoscale thermal transport. II. 2003–2012

    OpenAIRE

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2013-01-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of th...

  11. Fast heat flux modulation at the nanoscale

    OpenAIRE

    van Zwol, P. J.; Joulain, K.; Abdallah, P. Ben; Greffet, J. J.; Chevrier, J.

    2011-01-01

    We introduce a new concept for electrically controlled heat flux modulation. A flux contrast larger than 10 dB is expected with switching time on the order of tens of nanoseconds. Heat flux modulation is based on the interplay between radiative heat transfer at the nanoscale and phase change materials. Such large contrasts are not obtainable in solids, or in far field. As such this opens up new horizons for temperature modulation and actuation at the nanoscale.

  12. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

    Directory of Open Access Journals (Sweden)

    Michael Loong Peng Tan

    2013-01-01

    Full Text Available Long channel carbon nanotube transistor (CNT can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL effects in silicon MOSFET while sustaining the same unit area at higher current density.

  13. Design exploration of emerging nano-scale non-volatile memory

    CERN Document Server

    Yu, Hao

    2014-01-01

    This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

  14. Passive films at the nanoscale

    International Nuclear Information System (INIS)

    Maurice, Vincent; Marcus, Philippe

    2012-01-01

    Highlights: ► Nanoscale data on growth, structure and local properties of passive films reviewed. ► Preferential role of defects of passive films on the corrosion resistance emphasized. ► Effect of grain boundaries on local electronic properties shown by new data. ► Use of atomistic modeling to test mechanistic hypotheses illustrated. - Abstract: The nanometer scale chemical and structural aspects of ultrathin oxide passive films providing self-protection against corrosion to metals and alloys in aqueous environments are reviewed. Data on the nucleation and growth of 2D anodic oxide films, details on the atomic structure and nanostructure of 3D passive films, the preferential role of surface step edges in dissolution in the passive state and the preferential role of grain boundaries of the passive films in passivity breakdown are presented. Future perspectives are discussed, and exemplified by new data obtained on the relationship between the nanostructure of oxide passive films and their local electronic properties. Atomistic corrosion modeling by ab initio density functional theory (DFT) is illustrated by the example of interactions of chloride ions with hydroxylated oxide surfaces, including the role of surface step edges. Data obtained on well-defined substrate surfaces with surface analytical techniques are emphasized.

  15. Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

  16. Nanoscale ferroelectrics and multiferroics key processes and characterization issues, and nanoscale effects

    CERN Document Server

    Alguero, Miguel

    2016-01-01

    This book reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects. Recently described nanoscale novel phenomena are also addressed. Organized into three parts it addresses key issues in processing (nanostructuring), characterization (of the nanostructured materials) and nanoscale effects. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, it covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer heterostructures or epitaxial systems, and to nanoscale free standing objects with specific geometries, such as nanowires and tubes at different levels of development. The book is developed from t...

  17. Spin-dependent transport and functional design in organic ferromagnetic devices

    Directory of Open Access Journals (Sweden)

    Guichao Hu

    2017-09-01

    Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

  18. Micro and Nano-Scale Technologies for Cell Mechanics

    Directory of Open Access Journals (Sweden)

    Mustafa Unal

    2014-10-01

    Full Text Available Cell mechanics is a multidisciplinary field that bridges cell biology, fundamental mechanics, and micro and nanotechnology, which synergize to help us better understand the intricacies and the complex nature of cells in their native environment. With recent advances in nanotechnology, microfabrication methods and micro-electro-mechanical-systems (MEMS, we are now well situated to tap into the complex micro world of cells. The field that brings biology and MEMS together is known as Biological MEMS (BioMEMS. BioMEMS take advantage of systematic design and fabrication methods to create platforms that allow us to study cells like never before. These new technologies have been rapidly advancing the study of cell mechanics. This review article provides a succinct overview of cell mechanics and comprehensively surveys micro and nano-scale technologies that have been specifically developed for and are relevant to the mechanics of cells. Here we focus on micro and nano-scale technologies, and their applications in biology and medicine, including imaging, single cell analysis, cancer cell mechanics, organ-on-a-chip systems, pathogen detection, implantable devices, neuroscience and neurophysiology. We also provide a perspective on the future directions and challenges of technologies that relate to the mechanics of cells.

  19. Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ouardi, Siham

    2012-03-19

    This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications. The first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co{sub 2}MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound. A major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. This thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi{sub 1-x}M{sub x}Sn (where M=Sc, V and 0

  20. Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

    International Nuclear Information System (INIS)

    Ouardi, Siham

    2012-01-01

    This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications. The first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co 2 MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound. A major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. This thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi 1-x M x Sn (where M=Sc, V and 0 0.26 Sc 0.04 Zr 0.35 Hf 0.35 Sn. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi 0.3 Zr 0.35 Hf 0.35 Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk sensitive HAXPES. The linear behavior of the spectra close to εF proves the bulk origin of Dirac-cone type density of states. Furthermore, a systematic study on the optical and transport properties of PtYSb is presented. The compound exhibits promising thermoelectric properties with a high figure of merit (ZT=0.2) and a Hall mobility μh of 300 cm 2 /Vs at 350 K. The last part of this thesis describes the linear dichroism in angular-resolved photoemission from the valence band

  1. The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

    Directory of Open Access Journals (Sweden)

    César Moreno

    2012-11-01

    Full Text Available We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON and high-resistive (OFF states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

  2. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

    Directory of Open Access Journals (Sweden)

    Avi Karsenty

    2015-01-01

    Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

  3. Droplet-fused microreactors for room temperature synthesis of nanoscale needle-like hydroxyapatite

    International Nuclear Information System (INIS)

    Liu Kaiying; Qin Jianhua

    2013-01-01

    A microfluidic device using droplet-fused microreactors is introduced for room temperature synthesis of nanoscale needle-shaped hydroxyapatite (HAp, Ca 10 (PO 4 ) 6 (OH) 2 ). The device is integrated with multifunctional units, e.g., T-junctions for droplet generation and fusion, winding channels for rapid mixing, and a delay line for simple visualization of the HAp formation process. The necessary conditions such as surfactant and fluid flow rate for an aqueous stream to merge with water-in-oil droplets are investigated. The nanoscale morphologies of the HAp produced by this method are also compared with HAp prepared by conventional bulk mixing. This paper shows that further reaction could be initiated by flowing additional reagent streams directly into the droplets of the initial reaction mixture, which is a novel approach for synthesizing a needle-like morphology of the HAp with a high aspect ratio under room temperature. (paper)

  4. Nanoscale chirality in metal and semiconductor nanoparticles.

    Science.gov (United States)

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  5. Atomic nanoscale technology in the nuclear industry

    CERN Document Server

    Woo, Taeho

    2011-01-01

    Developments at the nanoscale are leading to new possibilities and challenges for nuclear applications in areas ranging from medicine to international commerce to atomic power production/waste treatment. Progress in nanotech is helping the nuclear industry slash the cost of energy production. It also continues to improve application reliability and safety measures, which remain a critical concern, especially since the reactor disasters in Japan. Exploring the new wide-ranging landscape of nuclear function, Atomic Nanoscale Technology in the Nuclear Industry details the breakthroughs in nanosca

  6. Physical IC debug ─ backside approach and nanoscale challenge

    Directory of Open Access Journals (Sweden)

    U. Kerst

    2008-05-01

    Full Text Available Physical analysis for IC functionality in submicron technologies requires access through chip backside. Based upon typical global backside preparation with 50–100 µm moderate silicon thickness remaining, a state of the art of the analysis techniques available for this purpose is presented and evaluated for functional analysis and layout pattern resolution potential. A circuit edit technique valid for nano technology ICs, is also presented that is based upon the formation of local trenches using the bottom of Shallow Trench Isolation (STI as endpoint for Focused Ion Beam (FIB milling. As a derivative from this process, a locally ultra thin silicon device can be processed, creating a back surface as work bench for breakthrough applications of nanoscale analysis techniques to a fully functional circuit through chip backside. Several applications demonstrate the power and potential of this new approach.

  7. Synthesis and nanoscale thermal encoding of phase-change nanowires

    International Nuclear Information System (INIS)

    Sun Xuhui; Yu Bin; Meyyappan, M.

    2007-01-01

    Low-dimensional phase-change nanostructures provide a valuable research platform for understanding the phase-transition behavior and thermal properties at nanoscale and their potential in achieving superdense data storage. Ge 2 Sb 2 Te 5 nanowires have been grown using a vapor-liquid-solid technique and shown to exhibit distinctive properties that may overcome the present data storage scaling barrier. Local heating of an individual nanowire with a focused electron beam was used to shape a nano-bar-code on a Ge 2 Sb 2 Te 5 nanowire. The data encoding on Ge 2 Sb 2 Te 5 nanowire may promote novel device concepts to implement ultrahigh density, low energy, high speed data storage using phase-change nanomaterials with diverse thermal-programing strategies

  8. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  9. High efficiency polymer solar cells with vertically modulated nanoscale morphology

    International Nuclear Information System (INIS)

    Kumar, Ankit; Hong Ziruo; Yang Yang; Li Gang

    2009-01-01

    Nanoscale morphology has been shown to be a critical parameter governing charge transport properties of polymer bulk heterojunction (BHJ) solar cells. Recent results on vertical phase separation have intensified the research on 3D morphology control. In this paper, we intend to modify the distribution of donors and acceptors in a classical BHJ polymer solar cell by making the active layer richer in donors and acceptors near the anode and cathode respectively. Here, we chose [6,6]-phenyl- C 61 -butyric acid methyl ester (PCBM) to be the acceptor material to be thermally deposited on top of [poly(3-hexylthiophene)] P3HT: the PCBM active layer to achieve a vertical composition gradient in the BHJ structure. Here we report on a solar cell with enhanced power conversion efficiency of 4.5% which can be directly correlated with the decrease in series resistance of the device.

  10. Micro-and/or nano-scale patterned porous membranes, methods of making membranes, and methods of using membranes

    KAUST Repository

    Wang, Xianbin; Chen, Wei; Wang, Zhihong; Zhang, Xixiang; Yue, Weisheng; Lai, Zhiping

    2015-01-01

    Embodiments of the present disclosure provide for materials that include a pre-designed patterned, porous membrane (e.g., micro- and/or nano-scale patterned), structures or devices that include a pre-designed patterned, porous membrane, methods of making pre-designed patterned, porous membranes, methods of separation, and the like.

  11. Micro-and/or nano-scale patterned porous membranes, methods of making membranes, and methods of using membranes

    KAUST Repository

    Wang, Xianbin

    2015-01-22

    Embodiments of the present disclosure provide for materials that include a pre-designed patterned, porous membrane (e.g., micro- and/or nano-scale patterned), structures or devices that include a pre-designed patterned, porous membrane, methods of making pre-designed patterned, porous membranes, methods of separation, and the like.

  12. Field Effect Transistor in Nanoscale

    Science.gov (United States)

    2017-04-26

    sufficient in most cases. This document may be as long or as short as needed to give a fair account of the work performed during the period of...GRANT NUMBER FA2386-15-1-0007 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Swapan Pati 5d.  PROJECT NUMBER 5e.  TASK NUMBER 5f.   WORK UNIT NUMBER 7...staircase, which are hallmark of multistate transport devices, have been obtained. Source-drain voltage induced change in the occupation probabilities

  13. Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Deepanjan [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 (United States); Ganguly, Samiran [Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 (India); Dasgupta, S [Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee-247667 (India)

    2007-05-30

    Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p{sup +} poly-n{sup +} poly-p{sup +} poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime.

  14. Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

    International Nuclear Information System (INIS)

    Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

    2007-01-01

    Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

  15. Dynamic structural disorder in supported nanoscale catalysts

    International Nuclear Information System (INIS)

    Rehr, J. J.; Vila, F. D.

    2014-01-01

    We investigate the origin and physical effects of “dynamic structural disorder” (DSD) in supported nano-scale catalysts. DSD refers to the intrinsic fluctuating, inhomogeneous structure of such nano-scale systems. In contrast to bulk materials, nano-scale systems exhibit substantial fluctuations in structure, charge, temperature, and other quantities, as well as large surface effects. The DSD is driven largely by the stochastic librational motion of the center of mass and fluxional bonding at the nanoparticle surface due to thermal coupling with the substrate. Our approach for calculating and understanding DSD is based on a combination of real-time density functional theory/molecular dynamics simulations, transient coupled-oscillator models, and statistical mechanics. This approach treats thermal and dynamic effects over multiple time-scales, and includes bond-stretching and -bending vibrations, and transient tethering to the substrate at longer ps time-scales. Potential effects on the catalytic properties of these clusters are briefly explored. Model calculations of molecule-cluster interactions and molecular dissociation reaction paths are presented in which the reactant molecules are adsorbed on the surface of dynamically sampled clusters. This model suggests that DSD can affect both the prefactors and distribution of energy barriers in reaction rates, and thus can significantly affect catalytic activity at the nano-scale

  16. Benchtop Nanoscale Patterning Using Soft Lithography

    Science.gov (United States)

    Meenakshi, Viswanathan; Babayan, Yelizaveta; Odom, Teri W.

    2007-01-01

    This paper outlines several benchtop nanoscale patterning experiments that can be incorporated into undergraduate laboratories or advanced high school chemistry curricula. The experiments, supplemented by an online video lab manual, are based on soft lithographic techniques such as replica molding, micro-molding in capillaries, and micro-contact…

  17. Dynamic structural disorder in supported nanoscale catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Rehr, J. J.; Vila, F. D. [Department of Physics, University of Washington, Seattle, Washington 98195 (United States)

    2014-04-07

    We investigate the origin and physical effects of “dynamic structural disorder” (DSD) in supported nano-scale catalysts. DSD refers to the intrinsic fluctuating, inhomogeneous structure of such nano-scale systems. In contrast to bulk materials, nano-scale systems exhibit substantial fluctuations in structure, charge, temperature, and other quantities, as well as large surface effects. The DSD is driven largely by the stochastic librational motion of the center of mass and fluxional bonding at the nanoparticle surface due to thermal coupling with the substrate. Our approach for calculating and understanding DSD is based on a combination of real-time density functional theory/molecular dynamics simulations, transient coupled-oscillator models, and statistical mechanics. This approach treats thermal and dynamic effects over multiple time-scales, and includes bond-stretching and -bending vibrations, and transient tethering to the substrate at longer ps time-scales. Potential effects on the catalytic properties of these clusters are briefly explored. Model calculations of molecule-cluster interactions and molecular dissociation reaction paths are presented in which the reactant molecules are adsorbed on the surface of dynamically sampled clusters. This model suggests that DSD can affect both the prefactors and distribution of energy barriers in reaction rates, and thus can significantly affect catalytic activity at the nano-scale.

  18. Traceable nanoscale measurement at NML-SIRIM

    International Nuclear Information System (INIS)

    Dahlan, Ahmad M.; Abdul Hapip, A. I.

    2012-01-01

    The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

  19. Traceable nanoscale measurement at NML-SIRIM

    Science.gov (United States)

    Dahlan, Ahmad M.; Abdul Hapip, A. I.

    2012-06-01

    The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

  20. Inelastic transport theory for nanoscale systems

    DEFF Research Database (Denmark)

    Frederiksen, Thomas

    2007-01-01

    This thesis describes theoretical and numerical investigations of inelastic scat- tering and energy dissipation in electron transport through nanoscale sys- tems. A computational scheme, based on a combination of density functional theory (DFT) and nonequilibrium Green’s functions (NEGF), has been...

  1. Bio-Conjugates for Nanoscale Applications

    DEFF Research Database (Denmark)

    Villadsen, Klaus

    Bio-conjugates for Nanoscale Applications is the title of this thesis, which covers three different projects in chemical bio-conjugation research, namely synthesis and applications of: Lipidated fluorescent peptides, carbohydrate oxime-azide linkers and N-aryl O-R2 oxyamine derivatives. Lipidated...

  2. Traceable nanoscale measurement at NML-SIRIM

    Energy Technology Data Exchange (ETDEWEB)

    Dahlan, Ahmad M.; Abdul Hapip, A. I. [National Metrology Laboratory SIRIM Berhad (NML-SIRIM), Lot PT 4803, Bandar Baru Salak Tinggi, 43900 Sepang (Malaysia)

    2012-06-29

    The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

  3. Nanoscale diffusive memristor crossbars as physical unclonable functions.

    Science.gov (United States)

    Zhang, R; Jiang, H; Wang, Z R; Lin, P; Zhuo, Y; Holcomb, D; Zhang, D H; Yang, J J; Xia, Q

    2018-02-08

    Physical unclonable functions have emerged as promising hardware security primitives for device authentication and key generation in the era of the Internet of Things. Herein, we report novel physical unclonable functions built upon the crossbars of nanoscale diffusive memristors that translate the stochastic distribution of Ag clusters in a SiO 2 matrix into a random binary bitmap that serves as a device fingerprint. The random dispersion of Ag led to an uneven number of clusters at each cross-point, which in turn resulted in a stochastic ability to switch in the Ag:SiO 2 diffusive memristors in an array. The randomness of the dispersion was a barrier to fingerprint cloning and the unique fingerprints of each device were persistent after fabrication. Using an optimized fabrication procedure, we maximized the randomness and achieved an inter-class Hamming distance of 50.68%. We also discovered that the bits were not flipping after over 10 4 s at 400 K, suggesting superior reliability of our physical unclonable functions. In addition, our diffusive memristor-based physical unclonable functions were easy to fabricate and did not require complicated post-processing for digitization and thus, provide new opportunities in hardware security applications.

  4. Magnetism From Fundamentals to Nanoscale Dynamics

    CERN Document Server

    Stöhr, Joachim

    2006-01-01

    The present text book gives an comprehensive account of magnetism, spanning the historical development, the physical foundations and the continuing research underlying the field, one of the oldest yet still vibrant field of physics. It covers both the classical and quantum mechanical aspects of magnetism and novel experimental techniques. Perhaps uniquely, it also discusses spin transport and magnetization dynamics phenomena associated with atomically and spin engineered nano-structures against the backdrop of spintronics and magnetic storage and memory applications. Despite the existence of various books on the topic, a fresh text book that reviews the fundamental physical concepts and uses them in a coherent fashion to explain some of the forefront problems and applications today was thought useful by the authors and their colleagues. Magnetism is written for students on the late undergraduate and the graduate levels and should also serve as a state-of-the-art reference for scientists in academia and resear...

  5. Visualizing nanoscale phase morphology for understanding photovoltaic performance of PTB7: PC71BM solar cell

    Science.gov (United States)

    Supasai, Thidarat; Amornkitbamrung, Vittaya; Thanachayanont, Chanchana; Tang, I.-Ming; Sutthibutpong, Thana; Rujisamphan, Nopporn

    2017-11-01

    Visualizing and controlling the phase separation of the donor and acceptor domains in organic bulk-hetero-junction (BHJ) solar devices made with poly([4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethyl-hexyl)carbon-yl]thieno[3,4-bthiophenediyl]) (PTB7) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) are needed to achieve high power conversion efficiency (PCE). Traditional bright-field (BF) imaging, especially of polymeric materials, produces images of poor contrast when done at the nanoscale level. Clear nanoscale morphologies of the PTB7:PC71BM blends prepared with different 1,8-diiodooctane (DIO) concentrations were seen when using the energy-filtered transmission electron microscopy (EFTEM). The electron energy loss (EELS) spectra of the pure PTB7 and PC71BM samples are centered at 22.7 eV and 24.5 eV, respectively. Using the electrons whose energy losses are in the range of 16-30 eV, detail information of the phase morphology at the nanoscale was obtained. Correlations between the improvement in the photovoltaic performances and the increased electron mobility were seen. These correlations are discussed in terms of the changes (at the nanoscale level) in blending phase morphology when different DIO concentrations are added.

  6. Effects of structural modification on reliability of nanoscale nitride HEMTs

    Science.gov (United States)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  7. A Low-Power High-Speed Spintronics-Based Neuromorphic Computing System Using Real Time Tracking Method

    DEFF Research Database (Denmark)

    Farkhani, Hooman; Tohidi, Mohammad; Farkhani, Sadaf

    2018-01-01

    In spintronic-based neuromorphic computing systems (NCS), the switching of magnetic moment in a magnetic tunnel junction (MTJ) is used to mimic neuron firing. However, the stochastic switching behavior of the MTJ and process variations effect lead to a significant increase in stimulation time...... of such NCSs. Moreover, current NCSs need an extra phase to read the MTJ state after stimulation which is in contrast with real neuron functionality in human body. In this paper, the read circuit is replaced with a proposed real-time sensing (RTS) circuit. The RTS circuit tracks the MTJ state during...... stimulation phase. As soon as switching happens, the RTS circuit terminates the MTJ current and stimulates the post neuron. Hence, the RTS circuit not only improves the energy consumption and speed, but also makes the operation of NCS similar to real neuron functionality. The simulation results in 65-nm CMOS...

  8. Generalized non-Local Resistance Expression and its Application in F/N/F Spintronic Structure with Graphene Channel

    Science.gov (United States)

    Wei, Huazhou; Fu, Shiwei

    We report our work on the spin transport properties in the F/N/F(ferromagnets/normal metal/ferromagnets) spintronic structure from a new theoretical perspective. A significant problem in the field is to explain the inferior measured order of magnitude for spin lifetime. Based on the known non-local resistance formula and the mechanism analysis of spin-flipping within the interfaces between F and N, we analytically derive a broadly applicable new non-local resistance expression and a generalized Hanle curve formula. After employing them in the F/N/F structure under different limits, especially in the case of graphene channel, we find that the fitting from experimental data would yield a longer spin lifetime, which approaches its theoretical predicted value in graphene. The authors acknowledge the financial support by China University of Petroleum-Beijing and the Key Laboratory of Optical Detection Technology for Oil and Gas in this institution.

  9. Nanoscale Dimples for Improved Absorption in and Efficiency of Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

    Organic solar cells (OSC’s) have attracted much attention in the past years due to their low costs, light weight and mechanical flexibility. A promising method for improving the power conversion efficiencies of the devices is by incorporating structured electrodes in the solar cell architecture....... That way light absorption in the active layers of the devices can be improved. A cheap and large-scale production compatible method for structuring the electrodes in OSC’s is by the use of Anodic Alumina Oxide (AAO) membranes. Here, nano-scale pores of controlled dimensions are formed through anodic...

  10. Lessons learned from nanoscale specimens tested by MEMS-based apparatus

    Science.gov (United States)

    Elhebeary, Mohamed; Saif, M. Taher A.

    2017-06-01

    The last two decades were marked by the innovative synthesis of nanomaterials and devices. The success of these devices hinges on the mechanical properties of nanomaterials and an understanding of their deformation and failure mechanisms. Many novel testing techniques have been developed to test materials at small scale. This paper reviews the state-of-the-art microelectromechanical systems (MEMS) apparatus developed to characterize materials at nanoscale, and the key insights gained on structure-property relations of materials through these characterizations. Finally, new applications of MEMS in testing living materials, such as tissues and cells, for disease diagnosis and prognosis are discussed.

  11. Lessons learned from nanoscale specimens tested by MEMS-based apparatus

    International Nuclear Information System (INIS)

    Elhebeary, Mohamed; Saif, M Taher A

    2017-01-01

    The last two decades were marked by the innovative synthesis of nanomaterials and devices. The success of these devices hinges on the mechanical properties of nanomaterials and an understanding of their deformation and failure mechanisms. Many novel testing techniques have been developed to test materials at small scale. This paper reviews the state-of-the-art microelectromechanical systems (MEMS) apparatus developed to characterize materials at nanoscale, and the key insights gained on structure-property relations of materials through these characterizations. Finally, new applications of MEMS in testing living materials, such as tissues and cells, for disease diagnosis and prognosis are discussed. (topical review)

  12. Coupling Photonics and Coherent Spintronics for Low-Loss Flexible Optical Logic

    Science.gov (United States)

    2015-12-02

    into devices, ranging from macroscopic optical cavities, to arrays of microlens cavities, to quantum dot-impregnated integrated polymer waveguides...spins   in   semiconductor   nanocrystal   quantum   dots   (NCQDs),   with   the   particular   aim   of   enabling   spin... lock -­‐in   based   detection.   The   pump   and   probe   lasers   are   then   used   for   a   Faraday   rotation

  13. Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics

    Science.gov (United States)

    Meng Yam, Kah; Guo, Na; Zhang, Chun

    2018-06-01

    Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu2Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu2Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu2Si–NiPc–Cu2Si junction is about three orders higher than that through graphene–NiPc–graphene. Detailed analysis shows that the surprisingly high conductivity of Cu2Si–NiPc–Cu2Si originates from the mixing of the Cu2Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu2Si may be an excellent candidate for electrode materials for future nanoscale devices.

  14. Writing to and reading from a nano-scale crossbar memory based on memristors

    International Nuclear Information System (INIS)

    Vontobel, Pascal O; Robinett, Warren; Kuekes, Philip J; Stewart, Duncan R; Straznicky, Joseph; Stanley Williams, R

    2009-01-01

    We present a design study for a nano-scale crossbar memory system that uses memristors with symmetrical but highly nonlinear current-voltage characteristics as memory elements. The memory is non-volatile since the memristors retain their state when un-powered. In order to address the nano-wires that make up this nano-scale crossbar, we use two coded demultiplexers implemented using mixed-scale crossbars (in which CMOS-wires cross nano-wires and in which the crosspoint junctions have one-time configurable memristors). This memory system does not utilize the kind of devices (diodes or transistors) that are normally used to isolate the memory cell being written to and read from in conventional memories. Instead, special techniques are introduced to perform the writing and the reading operation reliably by taking advantage of the nonlinearity of the type of memristors used. After discussing both writing and reading strategies for our memory system in general, we focus on a 64 x 64 memory array and present simulation results that show the feasibility of these writing and reading procedures. Besides simulating the case where all device parameters assume exactly their nominal value, we also simulate the much more realistic case where the device parameters stray around their nominal value: we observe a degradation in margins, but writing and reading is still feasible. These simulation results are based on a device model for memristors derived from measurements of fabricated devices in nano-scale crossbars using Pt and Ti nano-wires and using oxygen-depleted TiO 2 as the switching material.

  15. Nanoscale microstructural characterization of a nanobainitic steel

    Energy Technology Data Exchange (ETDEWEB)

    Timokhina, I.B., E-mail: ilana.timokhina@eng.monash.edu.au [Centre for Material and Fibre Innovation, Deakin University, Victoria 3216 (Australia); Beladi, H. [Centre for Material and Fibre Innovation, Deakin University, Victoria 3216 (Australia); Xiong, X.Y. [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Adachi, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Hodgson, P.D. [Centre for Material and Fibre Innovation, Deakin University, Victoria 3216 (Australia)

    2011-08-15

    A 0.79 C-1.5 Si-1.98 Mn-0.98 Cr-0.24 Mo-1.06 Al-1.58 Co (wt.%) steel was isothermally heat treated at 200 deg. C for 10 days and 350 deg. C for 1 day to form a nanoscale bainitic microstructure consisting of nanobainitic ferrite laths with high dislocation density and retained austenite films. The microstructures of the samples were characterized by transmission electron microscopy and atom probe tomography. Despite the formation of nanoscale bainite with a high volume fraction of retained austenite in both steels, the ductility of both steels was surprisingly low. It is believed that this was associated with the formation of carbon-depleted retained austenite after isothermal transformation at 200 deg. C due to the formation of high number of Fe-C clusters and particles in the bainitic ferrite laths and carbon-enriched austenite after isothermal transformation at 350 deg. C.

  16. Bulk nanoscale materials in steel products

    International Nuclear Information System (INIS)

    Chehab, B; Wang, X; Masse, J-P; Zurob, H; Embury, D; Bouaziz, O

    2010-01-01

    Although a number of nanoscale metallic materials exhibit interesting mechanical properties the fabrication paths are often complex and difficult to apply to bulk structural materials. However a number of steels which exhibit combinations of plasticity and phase transitions can be deformed to produce ultra high strength levels in the range 1 to 3 GPa. The resultant high stored energy and complex microstructures allow new nanoscale structures to be produced by combinations of recovery and recrystallisation. The resultant structures exhibit totally new combinations of strength and ductility to be achieved. In specific cases this also enables both the nature of the grain boundary structure and the spatial variation in structure to be controlled. In this presentation both the detailed microstructural features and their relation to the strength, work-hardening capacity and ductility will be discussed for a number of martensitic and austenitic steels.

  17. Hybrid, Nanoscale Phospholipid/Block Copolymer Vesicles

    Directory of Open Access Journals (Sweden)

    Bo Liedberg

    2013-09-01

    Full Text Available Hybrid phospholipid/block copolymer vesicles, in which the polymeric membrane is blended with phospholipids, display interesting self-assembly behavior, incorporating the robustness and chemical versatility of polymersomes with the softness and biocompatibility of liposomes. Such structures can be conveniently characterized by preparing giant unilamellar vesicles (GUVs via electroformation. Here, we are interested in exploring the self-assembly and properties of the analogous nanoscale hybrid vesicles (ca. 100 nm in diameter of the same composition prepared by film-hydration and extrusion. We show that the self-assembly and content-release behavior of nanoscale polybutadiene-b-poly(ethylene oxide (PB-PEO/1-palmitoyl-2-oleoyl-sn-glycero-3-phosphatidylcholine (POPC hybrid phospholipid/block copolymer vesicles can be tuned by the mixing ratio of the amphiphiles. In brief, these hybrids may provide alternative tools for drug delivery purposes and molecular imaging/sensing applications and clearly open up new avenues for further investigation.

  18. Scanning nanoscale multiprobes for conductivity measurements

    DEFF Research Database (Denmark)

    Bøggild, Peter; Hansen, Torben Mikael; Kuhn, Oliver

    2000-01-01

    We report fabrication and measurements with two- and four-point probes with nanoscale dimensions, for high spatial resolution conductivity measurements on surfaces and thin films. By combination of conventional microfabrication and additive three-dimensional nanolithography, we have obtained...... electrode spacings down to 200 nm. At the tips of four silicon oxide microcantilevers, narrow carbon tips are grown in converging directions and subsequently coated with a conducting layer. The probe is placed in contact with a conducting surface, whereby the electrode resistance can be determined....... The nanoelectrodes withstand considerable contact force before breaking. The probe offers a unique possibility to position the voltage sensors, as well as the source and drain electrodes in areas of nanoscale dimensions. ©2000 American Institute of Physics....

  19. Programmed assembly of nanoscale structures using peptoids.

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jianhua (University of the Pacific, Stockton, CA); Russell, Scott (California State University, Stanislaus, Turlock, CA); Morishetti, Kiran (University of the Pacific, Stockton, CA); Robinson, David B.; Zuckermann, Ronald N. (Lawrence Berkeley National Laboratory, Berkeley, CA); Buffleben, George M.; Hjelm, Rex P. (Los Alamos National Laboratory, Los Alamos, NM); Kent, Michael Stuart (Sandia National Laboratories, Albuquerque, NM)

    2011-02-01

    Sequence-specific polymers are the basis of the most promising approaches to bottom-up programmed assembly of nanoscale materials. Examples include artificial peptides and nucleic acids. Another class is oligo(N-functional glycine)s, also known as peptoids, which permit greater sidegroup diversity and conformational control, and can be easier to synthesize and purify. We have developed a set of peptoids that can be used to make inorganic nanoparticles more compatible with biological sequence-specific polymers so that they can be incorporated into nucleic acid or other biologically based nanostructures. Peptoids offer degrees of modularity, versatility, and predictability that equal or exceed other sequence-specific polymers, allowing for rational design of oligomers for a specific purpose. This degree of control will be essential to the development of arbitrarily designed nanoscale structures.

  20. Characterization of molecule and particle transport through nanoscale conduits

    Science.gov (United States)

    Alibakhshi, Mohammad Amin

    Nanofluidic devices have been of great interest due to their applications in variety of fields, including energy conversion and storage, water desalination, biological and chemical separations, and lab-on-a-chip devices. Although these applications cross the boundaries of many different disciplines, they all share the demand for understanding transport in nanoscale conduits. In this thesis, different elusive aspects of molecule and particle transport through nanofluidic conduits are investigated, including liquid and ion transport in nanochannels, diffusion- and reaction-governed enzyme transport in nanofluidic channels, and finally translocation of nanobeads through nanopores. Liquid or solvent transport through nanoconfinements is an essential yet barely characterized component of any nanofluidic systems. In the first chapter, water transport through single hydrophilic nanochannels with heights down to 7 nm is experimentally investigated using a new measurement technique. This technique has been developed based on the capillary flow and a novel hybrid nanochannel design and is capable of characterizing flow in both single nanoconduits as well as nanoporous media. The presence of a 0.7 nm thick hydration layer on hydrophilic surfaces and its effect on increasing the hydraulic resistance of the nanochannels is verified. Next, ion transport in a new class of nanofluidic rectifiers is theoretically and experimentally investigated. These so called nanofluidic diodes are nanochannels with asymmetric geometries which preferentially allow ion transport in one direction. A nondimensional number as a function of electrolyte concentration, nanochannel dimensions, and surface charge is derived that summarizes the rectification behavior of this system. In the fourth chapter, diffusion- and reaction-governed enzyme transport in nanofluidic channels is studied and the theoretical background necessary for understanding enzymatic activity in nanofluidic channels is presented. A

  1. Fourth International Conference on Nanoscale Magnetism

    CERN Document Server

    Aktas, Bekir; Advances in Nanoscale Magnetism

    2009-01-01

    The book aims to provide an overview of recent progress in the understanding of magnetic properties in nanoscale through recent results of various theoretical and experimental investigations. The papers describe a wide range of physical aspects, together with theoretical and experimental methods. It is of central interest to researchers and specialists in magnetism and magnetic materials science, both in academic and industrial research, as well as advanced students.

  2. DOE - BES Nanoscale Science Research Centers (NSRCs)

    Energy Technology Data Exchange (ETDEWEB)

    Beecher, Cathy Jo [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-11-14

    These are slides from a powerpoint shown to guests during tours of Center for Integrated Nanotechnologies (CINT) at Los Alamos National Laboratory. It shows the five DOE-BES nanoscale science research centers (NSRCs), which are located at different national laboratories throughout the country. Then it goes into detail specifically about the Center for Integrated Nanotechnologies at LANL, including statistics on its user community and CINT's New Mexico industrial users.

  3. Nanoscale Science, Engineering and Technology Research Directions

    Energy Technology Data Exchange (ETDEWEB)

    Lowndes, D. H.; Alivisatos, A. P.; Alper, M.; Averback, R. S.; Jacob Barhen, J.; Eastman, J. A.; Imre, D.; Lowndes, D. H.; McNulty, I.; Michalske, T. A.; Ho, K-M; Nozik, A. J.; Russell, T. P.; Valentin, R. A.; Welch, D. O.; Barhen, J.; Agnew, S. R.; Bellon, P.; Blair, J.; Boatner, L. A.; Braiman, Y.; Budai, J. D.; Crabtree, G. W.; Feldman, L. C.; Flynn, C. P.; Geohegan, D. B.; George, E. P.; Greenbaum, E.; Grigoropoulos, C.; Haynes, T. E.; Heberlein, J.; Hichman, J.; Holland, O. W.; Honda, S.; Horton, J. A.; Hu, M. Z.-C.; Jesson, D. E.; Joy, D. C.; Krauss, A.; Kwok, W.-K.; Larson, B. C.; Larson, D. J.; Likharev, K.; Liu, C. T.; Majumdar, A.; Maziasz, P. J.; Meldrum, A.; Miller, J. C.; Modine, F. A.; Pennycook, S. J.; Pharr, G. M.; Phillpot, S.; Price, D. L.; Protopopescu, V.; Poker, D. B.; Pui, D.; Ramsey, J. M.; Rao, N.; Reichl, L.; Roberto, J.; Saboungi, M-L; Simpson, M.; Strieffer, S.; Thundat, T.; Wambsganss, M.; Wendleken, J.; White, C. W.; Wilemski, G.; Withrow, S. P.; Wolf, D.; Zhu, J. H.; Zuhr, R. A.; Zunger, A.; Lowe, S.

    1999-01-01

    This report describes important future research directions in nanoscale science, engineering and technology. It was prepared in connection with an anticipated national research initiative on nanotechnology for the twenty-first century. The research directions described are not expected to be inclusive but illustrate the wide range of research opportunities and challenges that could be undertaken through the national laboratories and their major national scientific user facilities with the support of universities and industry.

  4. Nanoscale-Agglomerate-Mediated Heterogeneous Nucleation.

    Science.gov (United States)

    Cha, Hyeongyun; Wu, Alex; Kim, Moon-Kyung; Saigusa, Kosuke; Liu, Aihua; Miljkovic, Nenad

    2017-12-13

    Water vapor condensation on hydrophobic surfaces has received much attention due to its ability to rapidly shed water droplets and enhance heat transfer, anti-icing, water harvesting, energy harvesting, and self-cleaning performance. However, the mechanism of heterogeneous nucleation on hydrophobic surfaces remains poorly understood and is attributed to defects in the hydrophobic coating exposing the high surface energy substrate. Here, we observe the formation of high surface energy nanoscale agglomerates on hydrophobic coatings after condensation/evaporation cycles in ambient conditions. To investigate the deposition dynamics, we studied the nanoscale agglomerates as a function of condensation/evaporation cycles via optical and field emission scanning electron microscopy (FESEM), microgoniometric contact angle measurements, nucleation statistics, and energy dispersive X-ray spectroscopy (EDS). The FESEM and EDS results indicated that the nanoscale agglomerates stem from absorption of sulfuric acid based aerosol particles inside the droplet and adsorption of volatile organic compounds such as methanethiol (CH 3 SH), dimethyl disulfide (CH 3 SSCH), and dimethyl trisulfide (CH 3 SSSCH 3 ) on the liquid-vapor interface during water vapor condensation, which act as preferential sites for heterogeneous nucleation after evaporation. The insights gained from this study elucidate fundamental aspects governing the behavior of both short- and long-term heterogeneous nucleation on hydrophobic surfaces, suggest previously unexplored microfabrication and air purification techniques, and present insights into the challenges facing the development of durable dropwise condensing surfaces.

  5. Static electric field enhancement in nanoscale structures

    Energy Technology Data Exchange (ETDEWEB)

    Lepetit, Bruno, E-mail: bruno.lepetit@irsamc.ups-tlse.fr; Lemoine, Didier, E-mail: didier.lemoine@irsamc.ups-tlse.fr [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Márquez-Mijares, Maykel, E-mail: mmarquez@instec.cu [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Instituto Superior de Tecnologías y Ciencias Aplicadas, Avenida Salvador Allende 1110, Quinta de los Molinos, La Habana (Cuba)

    2016-08-28

    We study the effect of local atomic- and nano-scale protrusions on field emission and, in particular, on the local field enhancement which plays a key role as known from the Fowler-Nordheim model of electronic emission. We study atomic size defects which consist of right angle steps forming an infinite length staircase on a tungsten surface. This structure is embedded in a 1 GV/m ambient electrostatic field. We perform calculations based upon density functional theory in order to characterize the total and induced electronic densities as well as the local electrostatic fields taking into account the detailed atomic structure of the metal. We show how the results must be processed to become comparable with those of a simple homogeneous tungsten sheet electrostatic model. We also describe an innovative procedure to extrapolate our results to nanoscale defects of larger sizes, which relies on the microscopic findings to guide, tune, and improve the homogeneous metal model, thus gaining predictive power. Furthermore, we evidence analytical power laws for the field enhancement characterization. The main physics-wise outcome of this analysis is that limited field enhancement is to be expected from atomic- and nano-scale defects.

  6. High speed friction microscopy and nanoscale friction coefficient mapping

    International Nuclear Information System (INIS)

    Bosse, James L; Lee, Sungjun; Huey, Bryan D; Andersen, Andreas Sø; Sutherland, Duncan S

    2014-01-01

    As mechanical devices in the nano/micro length scale are increasingly employed, it is crucial to understand nanoscale friction and wear especially at technically relevant sliding velocities. Accordingly, a novel technique has been developed for friction coefficient mapping (FCM), leveraging recent advances in high speed AFM. The technique efficiently acquires friction versus force curves based on a sequence of images at a single location, each with incrementally lower loads. As a result, true maps of the coefficient of friction can be uniquely calculated for heterogeneous surfaces. These parameters are determined at a scan velocity as fast as 2 mm s −1 for microfabricated SiO 2 mesas and Au coated pits, yielding results that are identical to traditional speed measurements despite being ∼1000 times faster. To demonstrate the upper limit of sliding velocity for the custom setup, the friction properties of mica are reported from 200 µm s −1 up to 2 cm s −1 . While FCM is applicable to any AFM and scanning speed, quantitative nanotribology investigations of heterogeneous sliding or rolling components are therefore uniquely possible, even at realistic velocities for devices such as MEMS, biological implants, or data storage systems. (paper)

  7. Nanoscale deformation measurements for reliability assessment of material interfaces

    Science.gov (United States)

    Keller, Jürgen; Gollhardt, Astrid; Vogel, Dietmar; Michel, Bernd

    2006-03-01

    With the development and application of micro/nano electronic mechanical systems (MEMS, NEMS) for a variety of market segments new reliability issues will arise. The understanding of material interfaces is the key for a successful design for reliability of MEMS/NEMS and sensor systems. Furthermore in the field of BIOMEMS newly developed advanced materials and well known engineering materials are combined despite of fully developed reliability concepts for such devices and components. In addition the increasing interface-to volume ratio in highly integrated systems and nanoparticle filled materials are challenges for experimental reliability evaluation. New strategies for reliability assessment on the submicron scale are essential to fulfil the needs of future devices. In this paper a nanoscale resolution experimental method for the measurement of thermo-mechanical deformation at material interfaces is introduced. The determination of displacement fields is based on scanning probe microscopy (SPM) data. In-situ SPM scans of the analyzed object (i.e. material interface) are carried out at different thermo-mechanical load states. The obtained images are compared by grayscale cross correlation algorithms. This allows the tracking of local image patterns of the analyzed surface structure. The measurement results are full-field displacement fields with nanometer resolution. With the obtained data the mixed mode type of loading at material interfaces can be analyzed with highest resolution for future needs in micro system and nanotechnology.

  8. Superconductors at the nanoscale. From basic research to applications

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Roger [Forschungszentrum Juelich GmbH (Germany). Peter Gruenberg Inst.; Moshchalkov, Victor [KU Leuven (Belgium). Inst. for Nanoscale Physics and Chemistry; Bending, Simon [Bath Univ. (United Kingdom). School of Physics; Tafuri, Francesco (ed.) [Seconda Univ. di Napoli, Aversa (Italy)

    2017-07-01

    By covering theory, design, and fabrication of nanostructured superconducting materials, this monograph is an invaluable resource for research and development. This book contains the following chapters: Tutorial on nanostructured superconductors; Imaging vortices in superconductors: from the atomic scale to macroscopic distances; Probing vortex dynamics on a single vortex level by scanning ac-susceptibility microscopy; STM studies of vortex cores in strongly confined nanoscale superconductors; Type-1.5 superconductivity; Direct visualization of vortex patterns in superconductors with competing vortex-vortex interactions; Vortex dynamics in nanofabricated chemical solution deposition high-temperature superconducting films; Artificial pinning sites and their applications; Vortices at microwave frequencies; Physics and operation of superconducting single-photon devices; Josephson and charging effect in mesoscopic superconducting devices; NanoSQUIDs: Basics and recent advances; Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} intrinsic Josephson junction stacks as emitters of terahertz radiation; Interference phenomena in superconductor-ferromagnet hybrids; Spin-orbit interactions, spin currents, and magnetization dynamics in superconductor/ferromagnet hybrids; Superconductor/ferromagnet hybrids.

  9. All-spin logic operations: Memory device and reconfigurable computing

    Science.gov (United States)

    Patra, Moumita; Maiti, Santanu K.

    2018-02-01

    Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of both inputs and outputs are described by spin state only, circumventing spin-to-charge conversion at every stage as often used in conventional devices with the inclusion of extra hardware that can eventually diminish the efficiency. All possible logic functions can be engineered from a single device without redesigning the circuit which certainly offers the opportunities of designing new generation spintronic devices. Moreover, we also discuss the utilization of the present model as a memory device and suitable computing operations with proposed experimental setups.

  10. Manufacturing at Nanoscale: Top-Down, Bottom-up and System Engineering

    International Nuclear Information System (INIS)

    Zhang Xiang; Sun Cheng; Fang, Nicholas

    2004-01-01

    The current nano-technology revolution is facing several major challenges: to manufacture nanodevices below 20 nm, to fabricate three-dimensional complex nano-structures, and to heterogeneously integrate multiple functionalities. To tackle these grand challenges, the Center for Scalable and Integrated NAno-Manufacturing (SINAM), a NSF Nanoscale Science and Engineering Center, set its goal to establish a new manufacturing paradigm that integrates an array of new nano-manufacturing technologies, including the plasmonic imaging lithography and ultramolding imprint lithography aiming toward critical resolution of 1-10 nm and the hybrid top-down and bottom-up technologies to achieve massively parallel integration of heterogeneous nanoscale components into higher-order structures and devices. Furthermore, SINAM will develop system engineering strategies to scale-up the nano-manufacturing technologies. SINAMs integrated research and education platform will shed light to a broad range of potential applications in computing, telecommunication, photonics, biotechnology, health care, and national security

  11. Controllable nanoscale rotating actuator system based on carbon nanotube and graphene

    International Nuclear Information System (INIS)

    Huang, Jianzhang; Han, Qiang

    2016-01-01

    A controllable nanoscale rotating actuator system consisting of a double carbon nanotube and graphene driven by a temperature gradient is proposed, and its rotating dynamics performance and driving mechanism are investigated through molecular dynamics simulations. The outer tube exhibits stable pure rotation with certain orientation under temperature gradient and the steady rotational speed rises as the temperature gradient increases. It reveals that the driving torque is caused by the difference of atomic van der Waals potentials due to the temperature gradient and geometrical features of carbon nanotube. A theoretical model for driving torque is established based on lattice dynamics theory and its predicted results agree well with molecular dynamics simulations. Further discussion is taken according to the theoretical model. The work in this study would be a guide for design and application of controllable nanoscale rotating devices based on carbon nanotubes and graphene. (paper)

  12. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  13. Topological Material-Based Spin Devices

    Science.gov (United States)

    Zhang, Minhao; Wang, Xuefeng

    Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

  14. Nanoscale control of energy and matter: challenges and opportunities for plasma science

    International Nuclear Information System (INIS)

    Ostrikov, Kostya

    2013-01-01

    Multidisciplinary challenges and opportunities in the ultimate ability to achieve nanoscale control of energy and matter are discussed using an example of the Plasma Nanoscience. This is an emerging multidisciplinary research field at the cutting edge of a large number of disciplines including but not limited to physics and chemistry of plasmas and gas discharges, materials science, surface science, nanoscience and nanotechnology, solid state physics, space physics and astrophysics, photonics, optics, plasmonics, spintronics, quantum information, physical chemistry, biomedical sciences and related engineering subjects. The origin, progress and future perspectives of this research field driven by the global scientific and societal challenges, is examined. The future potential of the Plasma Nanoscience to remain as a highly topical area in the global research and technological agenda in the Age of Fundamental-Level Control for a Sustainable Future is assessed using a framework of the five Grand Challenges for Basic Energy Sciences recently mapped by the US Department of Energy. It is concluded that the ongoing research is very relevant and is expected to substantially expand to competitively contribute to the solution of all of these Grand Challenges. The approach to control energy and matter at nano- and subnanoscales is based on identifying the prevailing carriers and transfer mechanisms of the energy and matter at the spatial and temporal scales that are most relevant to any particular nanofabrication process. Strong accent is made on the competitive edge of the plasma-based nanotechnology in applications related to the major socio-economic issues (energy, food, water, health and environment) that are crucial for a sustainable development of humankind. Several important emerging topics, opportunities and multidisciplinary synergies for the Plasma Nanoscience are highlighted. The main nanosafety issues are also discussed and the environment- and human health

  15. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  16. Controllable Quantum States Mesoscopic Superconductivity and Spintronics (MS+S2006)

    Science.gov (United States)

    Takayanagi, Hideaki; Nitta, Junsaku; Nakano, Hayato

    2008-10-01

    distance on the magnetization configuration of submicron-sized ferromagnetic rings / Tetsuya Miyawaki. A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes / Ane Jensen. Simulation of the photon-spin quantum state transfer process / Yoshiaki Rikitake. Magnetotransport in two-dimensional electron gases on cylindrical surface / Friedland Klaus-Juergen. Full counting statistics for a single-electron transistor at intermediate conductance / Yasuhiro Utsumi. Creation of spin-polarized current using quantum point contacts and its detection / Mikio Eto. Density dependent electron effective mass in a back-gated quantum well / S. Nomura. The supersymmetric sigma formula and metal-insulator transition in diluted magnetic semiconductors / I. Kanazawa. Spin-photovoltaic effect in quantum wires / A. Fedorov -- Quantum interference. Nonequilibrium transport in Aharonov-Bohm interferometer with electron-phonon interaction / Akiko Ueda. Fano resonance and its breakdown in AB ring embedded with a molecule / Shigeo Fujimoto, Yuhei Natsume. Quantum resonance above a barrier in the presence of dissipation / Kohkichi Konno. Ensemble averaging in metallic quantum networks / F. Mallet -- Coherence and order in exotic materials. Progress towards an electronic array on liquid helium / David Rees. Measuring noise and cross correlations at high frequencies in nanophysics / T. Martin. Single wall carbon nanotube weak links / K. Grove-Rasmussen. Optical preparation of nuclear spins coupled to a localized electron spin / Guido Burkard. Topological effects in charge density wave dynamics / Toru Matsuura. Studies on nanoscale charge-density-wave systems: fabrication technique and transport phenomena / Katsuhiko Inagaki. Anisotropic behavior of hysteresis induced by the in-plane field in the v = 2/3 quantum Hall state / Kazuki Iwata. Phase diagram of the v = 2 bilayer quantum Hall state / Akira Fukuda -- Trapped ions (special talk). Quantum computation with trapped

  17. Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

    Science.gov (United States)

    Murphy, Andrew; Averin, Dmitri V.; Bezryadin, Alexey

    2017-06-01

    The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore’s law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.

  18. Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

    International Nuclear Information System (INIS)

    Murphy, Andrew; Bezryadin, Alexey; Averin, Dmitri V

    2017-01-01

    The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore’s law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation. (paper)

  19. Environmental, Health, and Safety Research Needs for Engineered Nanoscale Materials

    National Research Council Canada - National Science Library

    Alderson, Norris; Alexander, Catherine; Merzbacher, Celia; Chernicoff, William; Middendorf, Paul; Beck, Nancy; Chow, Flora; Poster, Dianne; Danello, Mary Ann; Barrera, Enriqueta

    2006-01-01

    ...) research and information needs related to understanding and management of potential risks of engineered nanoscale materials that may be used, for example, in commercial or consumer products, medical...

  20. Coherent and correlated spin transport in nanoscale superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Morten, Jan Petter

    2008-03-15

    Motivated by the desire for better understanding of nano electronic systems, we theoretically study the conductance and noise characteristics of current flow between superconductors, ferromagnets, and normal-metals. Such nano structures can reveal information about superconductor proximity effects, spin-relaxation processes, and spintronic effects with potential applications for different areas of mesoscopic physics. We employ the quasiclassical theory of superconductivity in the Keldysh formalism, and calculate the nonequilibrium transport of spin and charge using various approaches like the circuit theory of quantum transport and full counting statistics. For two of the studied structures, we have been able to compare our theory to experimental data and obtain good agreement. Transport and relaxation of spin polarized current in superconductors is governed by energy-dependent transport coefficients and spin-flip rates which are determined by quantum interference effects. We calculate the resulting temperature-dependent spin flow in ferromagnet-superconductor devices. Experimental data for spin accumulation and spin relaxation in a superconducting nano wire is in agreement with the theory, and allows for a spin-flip spectroscopy that determines the dominant mechanism for spin-flip relaxation in the studied samples. A ferromagnet precessing under resonance conditions can give rise to pure spin current injection into superconductors. We find that the absorbed spin current is measurable as a temperature dependent Gilbert damping, which we calculate and compare to experimental data. Crossed Andreev reflection denotes superconducting pairing of electrons flowing from different normal-metal or ferromagnet terminals into a superconductor. We calculate the nonlocal currents resulting from this process in competition with direct electron transport between the normal-metal terminals. We take dephasing into account, and study the nonlocal current when the types of contact in

  1. Low-power non-volatile spintronic memory: STT-RAM and beyond

    International Nuclear Information System (INIS)

    Wang, K L; Alzate, J G; Khalili Amiri, P

    2013-01-01

    The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

  2. EDITORIAL: Quantum science and technology at the nanoscale Quantum science and technology at the nanoscale

    Science.gov (United States)

    Demming, Anna

    2010-07-01

    The development of quantum theory was an archetypal scientific revolution in early twentieth-century physics. In many ways, the probabilities and uncertainties that replaced the ubiquitous application of classical mechanics may have seemed a violent assault on logic and reason. 'Something unknown is doing we don't know what-that is what our theory amounts to,' Sir Arthur Eddington famously remarked, adding, 'It does not sound a particularly illuminating theory. I have read something like it elsewhere: the slithy toves, did gyre and gimble in the wabe' [1]. Today, quantum mechanics no longer seems a dark art best confined to the boundaries of physics and philosophy. Scanning probe micrographs have captured actual images of quantum-mechanical interference patterns [2], and familiarity has made the claims of quantum theory more palatable. An understanding of quantum effects is essential for nanoscale science and technology research. This special issue on quantum science and technology at the nanoscale collates some of the latest research that is extending the boundaries of our knowledge and understanding in the field. Quantum phenomena have become particularly significant in attempts to further reduce the size of electronic devices, the trend widely referred to as Moore's law. In this issue, researchers in Switzerland report results from transport studies on graphene. The researchers investigate the conductance variance in systems with superconducting contacts [3]. Also in this issue, researchers in Germany calculate the effects of spin-orbit coupling in a molecular dimer and predict nonlinear transport. They also explain how ferromagnetic electrodes can be used to probe these interactions [4]. Our understanding of spin and the ability to manipulate it has advanced greatly since the notion of spin was first proposed. However, it remains the case that little is known about local coherent fluctuations of spin polarizations, the scale on which they occur, how they are

  3. BO2-functionalized B3N3C54 heterofullerene as a possible candidate for molecular spintronics and nonlinear optics

    Science.gov (United States)

    Srivastava, Ambrish Kumar; Pandey, Sarvesh Kumar; Misra, Neeraj

    2016-04-01

    BO2-substituted B3N3C54 heterofullerene was studied using density functional theory, and its electronic, magnetic and nonlinear optical properties are discussed. The substitution was considered at the B and N sites of the heterofullerene, in lower and higher spin states. We notice that BO2 substitution at the B sites of B3N3C54 heterofullerene leads to interesting properties, such as a smaller energy gap (0.66 eV) and a high spin magnetic moment (3 μ B). The density-of-states curves, molecular orbitals and spin density surfaces have been used to explain these facts. In addition, the first-order mean hyperpolarizability of B3N3C54 heterofullerene has been found to be significantly large (3.6 × 103 a.u.), which is due to smaller transition energy in the crucial excited state. This is reflected by the absorption spectra calculated using the time-dependent density functional theory method. These findings may be exploited to design novel materials for possible spintronic and electro-optical applications.

  4. Emerging chemical strategies for imprinting magnetism in graphene and related 2D materials for spintronic and biomedical applications.

    Science.gov (United States)

    Tuček, Jiří; Błoński, Piotr; Ugolotti, Juri; Swain, Akshaya Kumar; Enoki, Toshiaki; Zbořil, Radek

    2018-03-26

    Graphene, a single two-dimensional sheet of carbon atoms with an arrangement mimicking the honeycomb hexagonal architecture, has captured immense interest of the scientific community since its isolation in 2004. Besides its extraordinarily high electrical conductivity and surface area, graphene shows a long spin lifetime and limited hyperfine interactions, which favors its potential exploitation in spintronic and biomedical applications, provided it can be made magnetic. However, pristine graphene is diamagnetic in nature due to solely sp2 hybridization. Thus, various attempts have been proposed to imprint magnetic features into graphene. The present review focuses on a systematic classification and physicochemical description of approaches leading to equip graphene with magnetic properties. These include introduction of point and line defects into graphene lattices, spatial confinement and edge engineering, doping of graphene lattice with foreign atoms, and sp3 functionalization. Each magnetism-imprinting strategy is discussed in detail including identification of roles of various internal and external parameters in the induced magnetic regimes, with assessment of their robustness. Moreover, emergence of magnetism in graphene analogues and related 2D materials such as transition metal dichalcogenides, metal halides, metal dinitrides, MXenes, hexagonal boron nitride, and other organic compounds is also reviewed. Since the magnetic features of graphene can be readily masked by the presence of magnetic residues from synthesis itself or sample handling, the issue of magnetic impurities and correct data interpretations is also addressed. Finally, current problems and challenges in magnetism of graphene and related 2D materials and future potential applications are also highlighted.

  5. A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2018-06-01

    Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

  6. Simulation of capillary bridges between nanoscale particles.

    Science.gov (United States)

    Dörmann, Michael; Schmid, Hans-Joachim

    2014-02-04

    Capillary forces are very important as they exceed in general other adhesion forces. But at the same time the exact calculation of these forces is very complex, so often assumptions and approximations are used. Previous research was done with regard to micrometer sized particles, but the behavior of nanoscale particles is different. Hence, the results for micrometer sized particles cannot be directly transferred when considering nanoscale particles. Therefore, a simulation method was developed to calculate numerically the shape of a rotationally symmetrical capillary bridge between two spherical particles or a particle and a plate. The capillary bridge in the gap between the particles is formed due to capillary condensation and is in thermodynamic equilibrium with the gas phase. Hence the Kelvin equation and the Young-Laplace equation can be used to calculate the profile of the capillary bridge, depending on the relative humidity of the surrounding air. The bridge profile consists of several elements that are determined consecutively and interpolated linearly. After the shape is determined, the volume and force, divided into capillary pressure force and surface tension force, can be calculated. The validation of this numerical model will be shown by comparison with several different analytical calculations for micrometer-sized particles. Furthermore, it is demonstrated that two often used approximations, (1) the toroidal approximation and (2) the use of an effective radius, cannot be used for nanoscale particles without remarkable mistake. It will be discussed how the capillary force and its components depend on different parameters, like particle size, relative humidity, contact angle, and distance, respectively. The rupture of a capillary bridge due to particle separation will also be presented.

  7. Nanoscale microwave microscopy using shielded cantilever probes

    KAUST Repository

    Lai, Keji; Kundhikanjana, Worasom; Kelly, Michael A.; Shen, Zhi-Xun

    2011-01-01

    Quantitative dielectric and conductivity mapping in the nanoscale is highly desirable for many research disciplines, but difficult to achieve through conventional transport or established microscopy techniques. Taking advantage of the micro-fabrication technology, we have developed cantilever-based near-field microwave probes with shielded structures. Sensitive microwave electronics and finite-element analysis modeling are also utilized for quantitative electrical imaging. The system is fully compatible with atomic force microscope platforms for convenient operation and easy integration of other modes and functions. The microscope is ideal for interdisciplinary research, with demonstrated examples in nano electronics, physics, material science, and biology.

  8. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  9. Micro- and nanoscale phenomena in tribology

    CERN Document Server

    Chung, Yip-Wah

    2011-01-01

    Drawn from presentations at a recent National Science Foundation Summer Institute on Nanomechanics, Nanomaterials, and Micro/Nanomanufacturing, Micro- and Nanoscale Phenomena in Tribology explores the convergence of the multiple science and engineering disciplines involved in tribology and the connection from the macro to nano world. Written by specialists from computation, materials science, mechanical engineering, surface physics, and chemistry, each chapter provides up-to-date coverage of both basic and advanced topics and includes extensive references for further study.After discussing the

  10. Nanoscale microwave microscopy using shielded cantilever probes

    KAUST Repository

    Lai, Keji

    2011-04-21

    Quantitative dielectric and conductivity mapping in the nanoscale is highly desirable for many research disciplines, but difficult to achieve through conventional transport or established microscopy techniques. Taking advantage of the micro-fabrication technology, we have developed cantilever-based near-field microwave probes with shielded structures. Sensitive microwave electronics and finite-element analysis modeling are also utilized for quantitative electrical imaging. The system is fully compatible with atomic force microscope platforms for convenient operation and easy integration of other modes and functions. The microscope is ideal for interdisciplinary research, with demonstrated examples in nano electronics, physics, material science, and biology.

  11. X-ray analysis of spintronic semiconductor and half metal thin film systems; Roentgenstrukturuntersuchungen an spintronischen Halbleiter- und Halbmetall-Duennschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Stahl, Andreas

    2010-07-01

    In this work the structural properties of spintronic semiconductor and halfmetalic thin-film systems were investigated. The layer thicknesses and interface roughnesses of the multi-layer systems were estimated by X-ray reflectivity measurements. The fits were performed using the software Fewlay which uses the Parratt formalism to calculate the reflectivities. The relaxation of the films was analyzed by reciprocal space mapping on preferably highly indexed Bragg reflexes. (orig.)

  12. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    Science.gov (United States)

    Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

    2014-07-22

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  13. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    Science.gov (United States)

    Bond, Tiziana C; Miles, Robin; Davidson, James; Liu, Gang Logan

    2015-11-03

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  14. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    Science.gov (United States)

    Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

    2015-07-14

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  15. The significant role of plasmonic effects in femtosecond laser-induced grating fabrication on the nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Min; Zhao, Fuli [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275 (China); Cheng, Ya; Xu, Zhizhan [State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, 201800 (China)

    2013-02-15

    Nowadays, plasmonics aiming at manipulating light beyond the diffraction limit has aroused great interest on account of the promise of nanoscale optical devices. Generally, the ability to break diffraction barrier is achieved via controlling surface plasmons (SPs) on artificial structures as products of human ingenuity. Here, nevertheless, it is demonstrated that in short-pulse laser ablation ultrafast active plasmonic structures spontaneously generate by virtue of plasmonic effects rather than human will. First, with the experimental results on ZnO, Si, and GaAs, explicit evidence is provided for the grating-splitting phenomenon that acts as a direct route for the formation of laser-induced deep-subwavelength gratings. The splitting mechanism can break through the diffraction limit and push laser-induced structures towards the nanoscale. Then, through comprehensive numerical studies based on the viewpoint of plasmonics, it can be confirmed that the grating-splitting phenomenon originates in the conversion of SP modes from the resonant to the nonresonant mode and further to the inphase or antiphase asymmetric mode. In short, plasmonic effects play an important role in ultrafast laser-induced grating splitting towards the nanoscale, which will provide new insights into the mechanisms of ultrafast laser-induced nanostructures. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. The significant role of plasmonic effects in femtosecond laser-induced grating fabrication on the nanoscale

    International Nuclear Information System (INIS)

    Huang, Min; Zhao, Fuli; Cheng, Ya; Xu, Zhizhan

    2013-01-01

    Nowadays, plasmonics aiming at manipulating light beyond the diffraction limit has aroused great interest on account of the promise of nanoscale optical devices. Generally, the ability to break diffraction barrier is achieved via controlling surface plasmons (SPs) on artificial structures as products of human ingenuity. Here, nevertheless, it is demonstrated that in short-pulse laser ablation ultrafast active plasmonic structures spontaneously generate by virtue of plasmonic effects rather than human will. First, with the experimental results on ZnO, Si, and GaAs, explicit evidence is provided for the grating-splitting phenomenon that acts as a direct route for the formation of laser-induced deep-subwavelength gratings. The splitting mechanism can break through the diffraction limit and push laser-induced structures towards the nanoscale. Then, through comprehensive numerical studies based on the viewpoint of plasmonics, it can be confirmed that the grating-splitting phenomenon originates in the conversion of SP modes from the resonant to the nonresonant mode and further to the inphase or antiphase asymmetric mode. In short, plasmonic effects play an important role in ultrafast laser-induced grating splitting towards the nanoscale, which will provide new insights into the mechanisms of ultrafast laser-induced nanostructures. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Recent Approaches to Controlling the Nanoscale Morphology of Polymer-Based Bulk-Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdulra'uf Lukman Bola

    2013-11-01

    Full Text Available The need for clean, inexpensive and renewable energy has increasingly turned research attention towards polymer photovoltaic cells. However, the performance efficiency of these devices is still low in comparison with silicon-based devices. The recent introduction of new materials and processing techniques has resulted in a remarkable increase in power-conversion efficiency, with a value above 10%. Controlling the interpenetrating network morphology is a key factor in obtaining devices with improved performance. This review focuses on the influence of controlled nanoscale morphology on the overall performance of bulk-heterojunction (BHJ photovoltaic cells. Strategies such as the use of solvents, solvent annealing, polymer nanowires (NWs, and donor–acceptor (D–A blend ratios employed to control the active-layer morphologies are all discussed.

  18. Catalysis at the nanoscale may change selectivity.

    Science.gov (United States)

    Costentin, Cyrille; Savéant, Jean-Michel

    2016-10-18

    Among the many virtues ascribed to catalytic nanoparticles, the prospect that the passage from the macro- to the nanoscale may change product selectivity attracts increasing attention. To date, why such effects may exist lacks explanation. Guided by recent experimental reports, we propose that the effects may result from the coupling between the chemical steps in which the reactant, intermediates, and products are involved and transport of these species toward the catalytic surface. Considering as a thought experiment the competitive formation of hydrogen and formate upon reduction of hydrogenocarbonate ions on metals like palladium or platinum, a model is developed that allows one to identify the governing parameters and predict the effect of nanoscaling on selectivity. The model leads to a master equation relating product selectivity and thickness of the diffusion layer. The latter parameter varies considerably upon passing from the macro- to the nanoscale, thus predicting considerable variations of product selectivity. These are subtle effects in the sense that the same mechanism might exhibit a reverse variation of the selectivity if the set of parameter values were different. An expression is given that allows one to predict the direction of the effect. There has been a tendency to assign the catalytic effects of nanoscaling to chemical reactivity changes of the active surface. Such factors might be important in some circumstances. We, however, insist on the likely role of short-distance transport on product selectivity, which could have been thought, at first sight, as the exclusive domain of chemical factors.

  19. Computer simulations for the nano-scale

    International Nuclear Information System (INIS)

    Stich, I.

    2007-01-01

    A review of methods for computations for the nano-scale is presented. The paper should provide a convenient starting point into computations for the nano-scale as well as a more in depth presentation for those already working in the field of atomic/molecular-scale modeling. The argument is divided in chapters covering the methods for description of the (i) electrons, (ii) ions, and (iii) techniques for efficient solving of the underlying equations. A fairly broad view is taken covering the Hartree-Fock approximation, density functional techniques and quantum Monte-Carlo techniques for electrons. The customary quantum chemistry methods, such as post Hartree-Fock techniques, are only briefly mentioned. Description of both classical and quantum ions is presented. The techniques cover Ehrenfest, Born-Oppenheimer, and Car-Parrinello dynamics. The strong and weak points of both principal and technical nature are analyzed. In the second part we introduce a number of applications to demonstrate the different approximations and techniques introduced in the first part. They cover a wide range of applications such as non-simple liquids, surfaces, molecule-surface interactions, applications in nano technology, etc. These more in depth presentations, while certainly not exhaustive, should provide information on technical aspects of the simulations, typical parameters used, and ways of analysis of the huge amounts of data generated in these large-scale supercomputer simulations. (author)

  20. Nanomaterial Case Studies: Nanoscale Titanium Dioxide in ...

    Science.gov (United States)

    EPA announced the availability of the final report, Nanomaterial Case Studies: Nanoscale Titanium Dioxide in Water Treatment and in Topical Sunscreen. This report is a starting point to determine what is known and what needs to be known about selected nanomaterials as part of a process to identify and prioritize research to inform future assessments of the potential ecological and health implications of these materials. Two specific applications of nanoscale titanium dioxide (nano-TiO2) are considered: (1) as an agent for removing arsenic from drinking water; and (2) as an active ingredient in topical sunscreen. These case studies are organized around a comprehensive environmental assessment (CEA) framework that combines a product life cycle perspective with the risk assessment paradigm. They are intended to help identify what may need to be known in order to conduct a comprehensive environmental assessment of the potential risks related to nano-TiO2. These “case studies” do not represent completed or even preliminary assessments, nor are they intended to serve as a basis for risk management decisions in the near term on these specific uses of nano TiO2. Rather, the intent is to use this document in developing the scientific and technical information needed for future assessment efforts.

  1. Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray (Final Report)

    Science.gov (United States)

    EPA announced the release of the final report, Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray. This report represents a case study of engineered nanoscale silver (nano-Ag), focusing on the specific example of nano-Ag as possibly used in disinfectant spr...

  2. Frontier in nanoscale flows fractional calculus and analytical methods

    CERN Document Server

    Lewis, Roland; Liu, Hong-yan

    2014-01-01

    This ebook covers the basic properties of nanoscale flows, and various analytical and numerical methods for nanoscale flows and environmental flows. This ebook is a good reference not only for audience of the journal, but also for various communities in mathematics, nanotechnology and environmental science.

  3. Thermal analysis of continuous and patterned multilayer films in the presence of a nanoscale hot spot

    Science.gov (United States)

    Juang, Jia-Yang; Zheng, Jinglin

    2016-10-01

    Thermal responses of multilayer films play essential roles in state-of-the-art electronic systems, such as photo/micro-electronic devices, data storage systems, and silicon-on-insulator transistors. In this paper, we focus on the thermal aspects of multilayer films in the presence of a nanoscale hot spot induced by near field laser heating. The problem is set up in the scenario of heat assisted magnetic recording (HAMR), the next-generation technology to overcome the data storage density limit imposed by superparamagnetism. We characterized thermal responses of both continuous and patterned multilayer media films using transient thermal modeling. We observed that material configurations, in particular, the thermal barriers at the material layer interfaces crucially impact the temperature field hence play a key role in determining the hot spot geometry, transient response and power consumption. With a representative generic media model, we further explored the possibility of optimizing thermal performances by designing layers of heat sink and thermal barrier. The modeling approach demonstrates an effective way to characterize thermal behaviors of micro and nano-scale electronic devices with multilayer thin film structures. The insights into the thermal transport scheme will be critical for design and operations of such electronic devices.

  4. Self-assembly from milli- to nanoscales: methods and applications

    International Nuclear Information System (INIS)

    Mastrangeli, M; Celis, J-P; Abbasi, S; Varel, C; Böhringer, K F; Van Hoof, C

    2009-01-01

    The design and fabrication techniques for microelectromechanical systems (MEMS) and nanodevices are progressing rapidly. However, due to material and process flow incompatibilities in the fabrication of sensors, actuators and electronic circuitry, a final packaging step is often necessary to integrate all components of a heterogeneous microsystem on a common substrate. Robotic pick-and-place, although accurate and reliable at larger scales, is a serial process that downscales unfavorably due to stiction problems, fragility and sheer number of components. Self-assembly, on the other hand, is parallel and can be used for device sizes ranging from millimeters to nanometers. In this review, the state-of-the-art in methods and applications for self-assembly is reviewed. Methods for assembling three-dimensional (3D) MEMS structures out of two-dimensional (2D) ones are described. The use of capillary forces for folding 2D plates into 3D structures, as well as assembling parts onto a common substrate or aggregating parts to each other into 2D or 3D structures, is discussed. Shape matching and guided assembly by magnetic forces and electric fields are also reviewed. Finally, colloidal self-assembly and DNA-based self-assembly, mainly used at the nanoscale, are surveyed, and aspects of theoretical modeling of stochastic assembly processes are discussed. (topical review)

  5. Creation of nanoscale objects by swift heavy ion track manipulations

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.; Stolterfoht, N.

    2003-01-01

    In this work we give an overview of the possibilities to create new objects with nanoscale dimensions with ion tracks, for future applications. This can be realized in two ways: by manipulation of latent swift heavy ion (SHI) tracks, or by embedding specific structures within etched SHI tracks. In the first case one can make use of irradiation effects such as phase transitions and chemical or structural changes along the tracks. In the latter case, one can fill etched SHI tracks with metals, semiconductors, insulating and conducting polymers, fullerite, or colloides. Wires and tubules with outer diameters, between about 50 nm and 5 μm and lengths of up to about 100 μm can be obtained. The most important production techniques are galvanic and chemical depositions. Ion Transmission Spectrometry has turned out to be an especially useful tool for the characterisation of the produced objects. Present studies aim at the construction of condensers, magnets, diodes, and sensors in etched tracks. An obstacle for the practical realization of smallest-size polymeric ion track devices is the statistical distribution of the ion tracks on the target areas, which yields some pixels without any track, and other pixels even with overlapping tracks on a given sample. In a first test experiment we demonstrate that one can, in principle, overcome that problem by taking self-ordered porous foils as masks for subsequent high-fluence SHI irradiation. (author)

  6. Molecular and Nanoscale Engineering of High Efficiency Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Jenekhe, Samson A. [Univ. of Washington, Seattle, WA (United States); Ginger, David S. [Univ. of Washington, Seattle, WA (United States); Cao, Guozhong [Univ. of Washington, Seattle, WA (United States)

    2016-01-15

    We combined the synthesis of new polymers and organic-inorganic hybrid materials with new experimental characterization tools to investigate bulk heterojunction (BHJ) polymer solar cells and hybrid organic-inorganic solar cells during the 2007-2010 period (phase I) of this project. We showed that the bulk morphology of polymer/fullerene blend solar cells could be controlled by using either self-assembled polymer semiconductor nanowires or diblock poly(3-alkylthiophenes) as the light-absorbing and hole transport component. We developed new characterization tools in-house, including photoinduced absorption (PIA) spectroscopy, time-resolved electrostatic force microscopy (TR-EFM) and conductive and photoconductive atomic force microscopy (c-AFM and pc-AFM), and used them to investigate charge transfer and recombination dynamics in polymer/fullerene BHJ solar cells, hybrid polymer-nanocrystal (PbSe) devices, and dye-sensitized solar cells (DSSCs); we thus showed in detail how the bulk photovoltaic properties are connected to the nanoscale structure of the BHJ polymer solar cells. We created various oxide semiconductor (ZnO, TiO2) nanostructures by solution processing routes, including hierarchical aggregates and nanorods/nanotubes, and showed that the nanostructured photoanodes resulted in substantially enhanced light-harvesting and charge transport, leading to enhanced power conversion efficiency of dye-sensitized solar cells.

  7. Nanoscale molecular communication networks: a game-theoretic perspective

    Science.gov (United States)

    Jiang, Chunxiao; Chen, Yan; Ray Liu, K. J.

    2015-12-01

    Currently, communication between nanomachines is an important topic for the development of novel devices. To implement a nanocommunication system, diffusion-based molecular communication is considered as a promising bio-inspired approach. Various technical issues about molecular communications, including channel capacity, noise and interference, and modulation and coding, have been studied in the literature, while the resource allocation problem among multiple nanomachines has not been well investigated, which is a very important issue since all the nanomachines share the same propagation medium. Considering the limited computation capability of nanomachines and the expensive information exchange cost among them, in this paper, we propose a game-theoretic framework for distributed resource allocation in nanoscale molecular communication systems. We first analyze the inter-symbol and inter-user interference, as well as bit error rate performance, in the molecular communication system. Based on the interference analysis, we formulate the resource allocation problem as a non-cooperative molecule emission control game, where the Nash equilibrium is found and proved to be unique. In order to improve the system efficiency while guaranteeing fairness, we further model the resource allocation problem using a cooperative game based on the Nash bargaining solution, which is proved to be proportionally fair. Simulation results show that the Nash bargaining solution can effectively ensure fairness among multiple nanomachines while achieving comparable social welfare performance with the centralized scheme.

  8. Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography

    Science.gov (United States)

    Holt, Martin V.; Hruszkewycz, Stephan O.; Murray, Conal E.; Holt, Judson R.; Paskiewicz, Deborah M.; Fuoss, Paul H.

    2014-04-01

    We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.

  9. From Lab to Fab: Developing a Nanoscale Delivery Tool for Scalable Nanomanufacturing

    Science.gov (United States)

    Safi, Asmahan A.

    The emergence of nanomaterials with unique properties at the nanoscale over the past two decades carries a capacity to impact society and transform or create new industries ranging from nanoelectronics to nanomedicine. However, a gap in nanomanufacturing technologies has prevented the translation of nanomaterial into real-world commercialized products. Bridging this gap requires a paradigm shift in methods for fabricating structured devices with a nanoscale resolution in a repeatable fashion. This thesis explores the new paradigms for fabricating nanoscale structures devices and systems for high throughput high registration applications. We present a robust and scalable nanoscale delivery platform, the Nanofountain Probe (NFP), for parallel direct-write of functional materials. The design and microfabrication of NFP is presented. The new generation addresses the challenges of throughput, resolution and ink replenishment characterizing tip-based nanomanufacturing. To achieve these goals, optimized probe geometry is integrated to the process along with channel sealing and cantilever bending. The capabilities of the newly fabricated probes are demonstrated through two type of delivery: protein nanopatterning and single cell nanoinjection. The broad applications of the NFP for single cell delivery are investigated. An external microfluidic packaging is developed to enable delivery in liquid environment. The system is integrated to a combined atomic force microscope and inverted fluorescence microscope. Intracellular delivery is demonstrated by injecting a fluorescent dextran into Hela cells in vitro while monitoring the injection forces. Such developments enable in vitro cellular delivery for single cell studies and high throughput gene expression. The nanomanufacturing capabilities of NFPs are explored. Nanofabrication of carbon nanotube-based electronics presents all the manufacturing challenges characterizing of assembling nanomaterials precisely onto devices. The

  10. Hetero-oligonucleotide Nanoscale Tiles Capable of Two-Dimensional Lattice Formation as Testbeds for a Rapid, Affordable Purification Methodology

    Science.gov (United States)

    2013-01-01

    devices; however, DNA is not the only polymer that can take advantage of the specicity of the Watson – Crick base-pair to achieve these goals. Central to...14. ABSTRACT 16. SECURITY CLASSIFICATION OF: New nanoscale hetero-oligonucleotide tiles are assembled from DNA , RNA and morpholino oligos and...purified using size exclusion filtration. Homo-oligonucleotide tiles assembled from RP-cartridge processed DNA oligos are purified by nondenaturing gel

  11. Experimental Study of Electron and Phonon Dynamics in Nanoscale Materials by Ultrafast Laser Time-Domain Spectroscopy

    Science.gov (United States)

    Shen, Xiaohan

    With the rapid advances in the development of nanotechnology, nowadays, the sizes of elementary unit, i.e. transistor, of micro- and nanoelectronic devices are well deep into nanoscale. For the pursuit of cheaper and faster nanoscale electronic devices, the size of transistors keeps scaling down. As the miniaturization of the nanoelectronic devices, the electrical resistivity increases dramatically, resulting rapid growth in the heat generation. The heat generation and limited thermal dissipation in nanoscale materials have become a critical problem in the development of the next generation nanoelectronic devices. Copper (Cu) is widely used conducting material in nanoelectronic devices, and the electron-phonon scattering is the dominant contributor to the resistivity in Cu nanowires at room temperature. Meanwhile, phonons are the main carriers of heat in insulators, intrinsic and lightly doped semiconductors. The thermal transport is an ensemble of phonon transport, which strongly depends on the phonon frequency. In addition, the phonon transport in nanoscale materials can behave fundamentally different than in bulk materials, because of the spatial confinement. However, the size effect on electron-phonon scattering and frequency dependent phonon transport in nanoscale materials remain largely unexplored, due to the lack of suitable experimental techniques. This thesis is mainly focusing on the study of carrier dynamics and acoustic phonon transport in nanoscale materials. The weak photothermal interaction in Cu makes thermoreflectance measurement difficult, we rather measured the reflectivity change of Cu induced by absorption variation. We have developed a method to separately measure the processes of electron-electron scattering and electron-phonon scattering in epitaxial Cu films by monitoring the transient reflectivity signal using the resonant probe with particular wavelengths. The enhancement on electron-phonon scattering in epitaxial Cu films with thickness

  12. Fullerene Derived Molecular Electronic Devices

    Science.gov (United States)

    Menon, Madhu; Srivastava, Deepak; Saini, Subbash

    1998-01-01

    The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.

  13. Optoelectronic Devices Advanced Simulation and Analysis

    CERN Document Server

    Piprek, Joachim

    2005-01-01

    Optoelectronic devices transform electrical signals into optical signals and vice versa by utilizing the sophisticated interaction of electrons and light within micro- and nano-scale semiconductor structures. Advanced software tools for design and analysis of such devices have been developed in recent years. However, the large variety of materials, devices, physical mechanisms, and modeling approaches often makes it difficult to select appropriate theoretical models or software packages. This book presents a review of devices and advanced simulation approaches written by leading researchers and software developers. It is intended for scientists and device engineers in optoelectronics, who are interested in using advanced software tools. Each chapter includes the theoretical background as well as practical simulation results that help to better understand internal device physics. The software packages used in the book are available to the public, on a commercial or noncommercial basis, so that the interested r...

  14. Molecular Dynamics Studies of Nanofluidic Devices

    DEFF Research Database (Denmark)

    Zambrano Rodriguez, Harvey Alexander

    of such devices. Computational nanofluidics complements experimental studies by providing detailed spatial and temporal information of the nanosystem. In this thesis, we conduct molecular dynamics simulations to study basic nanoscale devices. We focus our studies on the understanding of transport mechanism...... to drive fluids and solids at the nanoscale. Specifically, we present the results of three different research projects. Throughout the first part of this thesis, we include a comprenhensive introduction to computational nanofluidics and to molecular simulations, and describe the molecular dynamics...... in opposite direction to the imposed thermal gradient also we measure higher velocities as higher thermal gradients are imposed. Secondly, we present an atomistic analysis of a molecular linear motor fabricated of coaxial carbon nanotubes and powered by thermal gradients. The MD simulation results indicate...

  15. Control of friction at the nanoscale

    Science.gov (United States)

    Barhen, Jacob; Braiman, Yehuda Y.; Protopopescu, Vladimir

    2010-04-06

    Methods and apparatus are described for control of friction at the nanoscale. A method of controlling frictional dynamics of a plurality of particles using non-Lipschitzian control includes determining an attribute of the plurality of particles; calculating an attribute deviation by subtracting the attribute of the plurality of particles from a target attribute; calculating a non-Lipschitzian feedback control term by raising the attribute deviation to a fractionary power .xi.=(2m+1)/(2n+1) where n=1, 2, 3 . . . and m=0, 1, 2, 3 . . . , with m strictly less than n and then multiplying by a control amplitude; and imposing the non-Lipschitzian feedback control term globally on each of the plurality of particles; imposing causes a subsequent magnitude of the attribute deviation to be reduced.

  16. Designing pseudocubic perovskites with enhanced nanoscale polarization

    Energy Technology Data Exchange (ETDEWEB)

    Levin, I. [Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA; Laws, W. J. [Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA; Wang, D. [Department of Materials Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom; Reaney, I. M. [Department of Materials Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

    2017-11-20

    A crystal-chemical framework has been proposed for the design of pseudocubic perovskites with nanoscale ferroelectric order, and its applicability has been demonstrated using a series of representative solid solutions that combined ferroelectric (K0.5Bi0.5TiO3, BaTiO3, and PbTiO3) and antiferroelectric (Nd-substituted BiFeO3) end members. The pseudocubic structures obtained in these systems exhibited distortions that were coherent on a scale ranging from sub-nanometer to tens of nanometers, but, in all cases, the macroscopic distortion remained unresolvable even if using high-resolution X-ray powder diffraction. Different coherence lengths for the local atomic displacements account for the distinctly different dielectric, ferroelectric, and electromechanical properties exhibited by the samples. The guidelines identified provide a rationale for chemically tuning the coherence length to obtain the desired functional response.

  17. Nanoscale surface characterization using laser interference microscopy

    Science.gov (United States)

    Ignatyev, Pavel S.; Skrynnik, Andrey A.; Melnik, Yury A.

    2018-03-01

    Nanoscale surface characterization is one of the most significant parts of modern materials development and application. The modern microscopes are expensive and complicated tools, and its use for industrial tasks is limited due to laborious sample preparation, measurement procedures, and low operation speed. The laser modulation interference microscopy method (MIM) for real-time quantitative and qualitative analysis of glass, metals, ceramics, and various coatings has a spatial resolution of 0.1 nm for vertical and up to 100 nm for lateral. It is proposed as an alternative to traditional scanning electron microscopy (SEM) and atomic force microscopy (AFM) methods. It is demonstrated that in the cases of roughness metrology for super smooth (Ra >1 nm) surfaces the application of a laser interference microscopy techniques is more optimal than conventional SEM and AFM. The comparison of semiconductor test structure for lateral dimensions measurements obtained with SEM and AFM and white light interferometer also demonstrates the advantages of MIM technique.

  18. Nanoscale spin sensing in artificial cell membranes

    International Nuclear Information System (INIS)

    Simpson David

    2014-01-01

    The use of the nitrogen-vacancy (NV) centre in diamond as a single spin sensor or magnetometer has attracted considerable interest in recent years because of its unique combination of sensitivity, nanoscale resolution, and optical initialisation and readout at room temperature. Nanodiamonds in particular hold great promise as an optical magnetometer probe for bio applications. In this work we employ nanodiamonds containing single NV spins to detect freely diffusing Mn2+ ions by detecting changes in the transverse relaxation time (T2) of the single spin probe. We also report the detection of gadolinium spin labels present in an artificial cell membrane by measuring changes in the longitudinal relaxation time (T1) of the probe. (author)

  19. Managing Temperature Effects in Nanoscale Adaptive Systems

    CERN Document Server

    Wolpert, David

    2012-01-01

    This book discusses new techniques for detecting, controlling, and exploiting the impacts of temperature variations on nanoscale circuits and systems.  It provides a holistic discussion of temperature management, including physical phenomena (reversal of the MOSFET temperature dependence) that have recently become problematic, along with circuit techniques for detecting, controlling, and adapting to these phenomena. A detailed discussion is also included of the general aspects of thermal-aware system design and management of temperature-induced faults. A new sensor system is described that can determine the temperature dependence as well as the operating temperature to improve system reliability.  A new method is presented to control a circuit’s temperature dependence by individually tuning pull-up and pull-down networks to their temperature-insensitive operating points. This method extends the range of supply voltages that can be made temperature-insensitive, achieving insensitivity at nominal voltage fo...

  20. Nanoscale Dewetting Transition in Protein Complex Folding

    Science.gov (United States)

    Hua, Lan; Huang, Xuhui; Liu, Pu; Zhou, Ruhong; Berne, Bruce J.

    2011-01-01

    In a previous study, a surprising drying transition was observed to take place inside the nanoscale hydrophobic channel in the tetramer of the protein melittin. The goal of this paper is to determine if there are other protein complexes capable of displaying a dewetting transition during their final stage of folding. We searched the entire protein data bank (PDB) for all possible candidates, including protein tetramers, dimers, and two-domain proteins, and then performed the molecular dynamics (MD) simulations on the top candidates identified by a simple hydrophobic scoring function based on aligned hydrophobic surface areas. Our large scale MD simulations found several more proteins, including three tetramers, six dimers, and two two-domain proteins, which display a nanoscale dewetting transition in their final stage of folding. Even though the scoring function alone is not sufficient (i.e., a high score is necessary but not sufficient) in identifying the dewetting candidates, it does provide useful insights into the features of complex interfaces needed for dewetting. All top candidates have two features in common: (1) large aligned (matched) hydrophobic areas between two corresponding surfaces, and (2) large connected hydrophobic areas on the same surface. We have also studied the effect on dewetting of different water models and different treatments of the long-range electrostatic interactions (cutoff vs PME), and found the dewetting phenomena is fairly robust. This work presents a few proteins other than melittin tetramer for further experimental studies of the role of dewetting in the end stages of protein folding. PMID:17608515

  1. Microelectronics to nanoelectronics materials, devices & manufacturability

    CERN Document Server

    Kaul, Anupama B

    2012-01-01

    Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena.Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology's Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and

  2. Coherence properties of blackbody radiation and application to energy harvesting and imaging with nanoscale rectennas

    Science.gov (United States)

    Lerner, Peter B.; Cutler, Paul H.; Miskovsky, Nicholas M.

    2015-01-01

    Modern technology allows the fabrication of antennas with a characteristic size comparable to the electromagnetic wavelength in the optical region. This has led to the development of new technologies using nanoscale rectifying antennas (rectennas) for solar energy conversion and sensing of terahertz, infrared, and visible radiation. For example, a rectenna array can collect incident radiation from an emitting source and the resulting conversion efficiency and operating characteristics of the device will depend on the spatial and temporal coherence properties of the absorbed radiation. For solar radiation, the intercepted radiation by a micro- or nanoscale array of devices has a relatively narrow spatial and angular distribution. Using the Van Cittert-Zernike theorem, we show that the coherence length (or radius) of solar radiation on an antenna array is, or can be, tens of times larger than the characteristic wavelength of the solar spectrum, i.e., the thermal wavelength, λT=2πℏc/(kBT), which for T=5000 K is about 3 μm. Such an effect is advantageous, making possible the rectification of solar radiation with nanoscale rectenna arrays, whose size is commensurate with the coherence length. Furthermore, we examine the blackbody radiation emitted from an array of antennas at temperature T, which can be quasicoherent and lead to a modified self-image, analogous to the Talbot-Lau self-imaging process but with thermal rather than monochromatic radiation. The self-emitted thermal radiation may be important as a nondestructive means for quality control of the array.

  3. Osteogenic response of human mesenchymal stem cells to well-defined nanoscale topography in vitro

    Directory of Open Access Journals (Sweden)

    de Peppo GM

    2014-05-01

    Full Text Available Giuseppe Maria de Peppo,1–3 Hossein Agheli,2,3 Camilla Karlsson,2,3 Karin Ekström,2,3 Helena Brisby,3,4 Maria Lennerås,2,3 Stefan Gustafsson,3,5 Peter Sjövall,3,5,6 Anna Johansson,2,3 Eva Olsson,3,5 Jukka Lausmaa,3,6 Peter Thomsen,2,3 Sarunas Petronis3,6 1The New York Stem Cell Foundation Research Institute, New York, NY, USA; 2Department of Biomaterials, Sahlgrenska Academy, University of Gothenburg, 3BIOMATCELL VINN Excellence Center of Biomaterials and Cell Therapy, 4Department of Orthopaedics, Sahlgrenska Academy, University of Gothenburg, 5Applied Physics, Chalmers University of Technology, Göteborg, Sweden; 6Chemistry, Materials and Surfaces, SP Technical Research Institute of Sweden, Borås, Sweden Background: Patterning medical devices at the nanoscale level enables the manipulation of cell behavior and tissue regeneration, with topographic features recognized as playing a significant role in the osseointegration of implantable devices. Methods: In this study, we assessed the ability of titanium-coated hemisphere-like topographic nanostructures of different sizes (approximately 50, 100, and 200 nm to influence the morphology, proliferation, and osteogenic differentiation of human mesenchymal stem cells (hMSCs. Results: We found that the proliferation and osteogenic differentiation of hMSCs was influenced by the size of the underlying structures, suggesting that size variations in topographic features at the nanoscale level, independently of chemistry, can be exploited to control hMSC behavior in a size-dependent fashion. Conclusion: Our studies demonstrate that colloidal lithography, in combination with coating technologies, can be exploited to investigate the cell response to well defined nanoscale topography and to develop next-generation surfaces that guide tissue regeneration and promote implant integration. Keywords: colloidal lithography, nanotopography, human mesenchymal stem cells, cell proliferation, osteogenic

  4. Picowatt Resolution Calorimetry for Micro and Nanoscale Energy Transport Studies

    Science.gov (United States)

    Sadat, Seid H.

    Precise quantification of energy transport is key to obtaining insights into a wide range of phenomena across various disciplines including physics, chemistry, biology and engineering. This thesis describes technical advancements into heat-flow calorimetry which enable measurement of energy transport at micro and nanoscales with picowatt resolution. I have developed two types of microfabricated calorimeter devices and demonstrated single digit picowatt resolution at room temperature. Both devices incorporate two distinct features; an active area isolated by a thermal conductance (GTh) of less than 1 microW/K and a high resolution thermometer with temperature resolution (DeltaTres) in the micro kelvin regime. These features enable measurements of heat currents (q) with picowatt resolution (q= Th xDeltaTres). In the first device the active area is suspended via silicon nitride beams with excellent thermal isolation (~600 nW/K) and a bimaterial cantilever (BMC) thermometer with temperature resolution of ~6 microK. Taken together this design enabled calorimetric measurements with 4 pW resolution. In the second device, the BMC thermometry technique is replaced by a high-resolution resistance thermometry scheme. A detailed noise analysis of resistance thermometers, confirmed by experimental data, enabled me to correctly predict the resolution of different measurement schemes and propose techniques to achieve an order of magnitude improvement in the resolution of resistive thermometers. By incorporating resistance thermometers with temperature resolution of ~30 microK, combined with a thermal isolation of ~150 nW/K, I demonstrated an all-electrical calorimeter device with a resolution of ~ 5 pW. Finally, I used these calorimeters to study Near-Field Radiative Heat Transfer (NF-RHT). Using these devices, we studied--for the first time--the effect of film thickness on the NF-RHT between two dielectric surfaces. We showed that even a very thin film (~50 nm) of silicon

  5. Nanoscale Mechanical Stimulation of Human Mesenchymal Stem Cells

    Directory of Open Access Journals (Sweden)

    H Nikukar

    2014-05-01

    We observed significant responses after 1 and 2-week stimulations in cell number, cell shapes and phenotypical markers. Microarray was performed for all groups. Cell count showed normal cell growth with stimulation. However, cell surface area, cell perimeter, and arboration after 1-week stimulation showed significant increases. Immunofluorescent studies have showed significant increase in osteocalcin production after stimulation. Conclusions: Nanoscale mechanical vibration showed significant changes in human mesenchymal stem cell behaviours. Cell morphology changed to become more polygonal and increased expression of the osteoblast markers were noted. These findings with gene regulation changes suggesting nanoscale mechanostimulation has stimulated osteoblastogenesis.  Keywords:  Mesenchymal, Nanoscale, Stem Cells.

  6. The Architectural Designs of a Nanoscale Computing Model

    Directory of Open Access Journals (Sweden)

    Mary M. Eshaghian-Wilner

    2004-08-01

    Full Text Available A generic nanoscale computing model is presented in this paper. The model consists of a collection of fully interconnected nanoscale computing modules, where each module is a cube of cells made out of quantum dots, spins, or molecules. The cells dynamically switch between two states by quantum interactions among their neighbors in all three dimensions. This paper includes a brief introduction to the field of nanotechnology from a computing point of view and presents a set of preliminary architectural designs for fabricating the nanoscale model studied.

  7. Tunneling path toward spintronics

    International Nuclear Information System (INIS)

    Miao Guoxing; Moodera, Jagadeesh S; Muenzenberg, Markus

    2011-01-01

    The phenomenon of quantum tunneling, which was discovered almost a century ago, has led to many subsequent discoveries. One such discovery, spin polarized tunneling, was made 40 years ago by Robert Meservey and Paul Tedrow (Tedrow and Meservey 1971 Phys. Rev. Lett. 26 192), and it has resulted in many fundamental observations and opened up an entirely new field of study. Until the mid-1990s, this field developed at a steady, low rate, after which a huge increase in activity suddenly occurred as a result of the unraveling of successful spin tunneling between two ferromagnets. In the past 15 years, several thousands of papers related to spin polarized tunneling and transport have been published, making this topic one of the hottest areas in condensed matter physics from both fundamental science and applications viewpoints. Many review papers and book chapters have been written in the past decade on this subject. This paper is not exhaustive by any means; rather, the emphases are on recent progress, technological developments and informing the reader about the current direction in which this topic is moving.

  8. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  9. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    Science.gov (United States)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  10. Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

    Science.gov (United States)

    2006-08-01

    combined with computational optimization routines the FEM allows us to predict the material properties and optimized geomnetry of structures tinder bias...genetic algorithms [41]. The lack of a direct relationship between the input parameters and the experimentally determined quantities is probably the single

  11. Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

    Science.gov (United States)

    Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

    2017-09-27

    Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

  12. Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramic

    Science.gov (United States)

    Holsgrove, Kristina M.; Kepaptsoglou, Demie M.; Douglas, Alan M.; Ramasse, Quentin M.; Prestat, Eric; Haigh, Sarah J.; Ward, Michael B.; Kumar, Amit; Gregg, J. Marty; Arredondo, Miryam

    2017-06-01

    Despite being of wide commercial use in devices, the orders of magnitude increase in resistance that can be seen in some semiconducting BaTiO3-based ceramics, on heating through the Curie temperature (TC), is far from well understood. Current understanding of the behavior hinges on the role of grain boundary resistance that can be modified by polarization discontinuities which develop in the ferroelectric state. However, direct nanoscale resistance mapping to verify this model has rarely been attempted, and the potential approach to engineer polarization states at the grain boundaries, that could lead to optimized positive temperature coefficient (PTC) behavior, is strongly underdeveloped. Here we present direct visualization and nanoscale mapping in a commercially optimized BaTiO3-PbTiO3-CaTiO3 PTC ceramic using Kelvin probe force microscopy, which shows that, even in the low resistance ferroelectric state, the potential drop at grain boundaries is significantly greater than in grain interiors. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy reveal new evidence of Pb-rich grain boundaries symptomatic of a higher net polarization normal to the grain boundaries compared to the purer grain interiors. These results validate the critical link between optimized PTC performance and higher local polarization at grain boundaries in this specific ceramic system and suggest a novel route towards engineering devices where an interface layer of higher spontaneous polarization could lead to enhanced PTC functionality.

  13. Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramic

    Directory of Open Access Journals (Sweden)

    Kristina M. Holsgrove

    2017-06-01

    Full Text Available Despite being of wide commercial use in devices, the orders of magnitude increase in resistance that can be seen in some semiconducting BaTiO3-based ceramics, on heating through the Curie temperature (TC, is far from well understood. Current understanding of the behavior hinges on the role of grain boundary resistance that can be modified by polarization discontinuities which develop in the ferroelectric state. However, direct nanoscale resistance mapping to verify this model has rarely been attempted, and the potential approach to engineer polarization states at the grain boundaries, that could lead to optimized positive temperature coefficient (PTC behavior, is strongly underdeveloped. Here we present direct visualization and nanoscale mapping in a commercially optimized BaTiO3–PbTiO3–CaTiO3 PTC ceramic using Kelvin probe force microscopy, which shows that, even in the low resistance ferroelectric state, the potential drop at grain boundaries is significantly greater than in grain interiors. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy reveal new evidence of Pb-rich grain boundaries symptomatic of a higher net polarization normal to the grain boundaries compared to the purer grain interiors. These results validate the critical link between optimized PTC performance and higher local polarization at grain boundaries in this specific ceramic system and suggest a novel route towards engineering devices where an interface layer of higher spontaneous polarization could lead to enhanced PTC functionality.

  14. Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

    International Nuclear Information System (INIS)

    Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

    2016-01-01

    In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

  15. Overview of nanoscale NEXAFS performed with soft X-ray microscopes

    Directory of Open Access Journals (Sweden)

    Peter Guttmann

    2015-02-01

    Full Text Available Today, in material science nanoscale structures are becoming more and more important. Not only for the further miniaturization of semiconductor devices like carbon nanotube based transistors, but also for newly developed efficient energy storage devices, gas sensors or catalytic systems nanoscale and functionalized materials have to be analysed. Therefore, analytical tools like near-edge X-ray absorption fine structure (NEXAFS spectroscopy has to be applied on single nanostructures. Scanning transmission X-ray microscopes (STXM as well as full-field transmission X-ray microscopes (TXM allow the required spatial resolution to study individual nanostructures. In the soft X-ray energy range only STXM was used so far for NEXAFS studies. Due to its unique setup, the TXM operated by the Helmholtz-Zentrum Berlin (HZB at the electron storage ring BESSY II is the first one in the soft X-ray range which can be used for NEXAFS spectroscopy studies which will be shown in this review. Here we will give an overview of the different microscopes used for NEXAFS studies and describe their advantages and disadvantages for different samples.

  16. Overview of nanoscale NEXAFS performed with soft X-ray microscopes.

    Science.gov (United States)

    Guttmann, Peter; Bittencourt, Carla

    2015-01-01

    Today, in material science nanoscale structures are becoming more and more important. Not only for the further miniaturization of semiconductor devices like carbon nanotube based transistors, but also for newly developed efficient energy storage devices, gas sensors or catalytic systems nanoscale and functionalized materials have to be analysed. Therefore, analytical tools like near-edge X-ray absorption fine structure (NEXAFS) spectroscopy has to be applied on single nanostructures. Scanning transmission X-ray microscopes (STXM) as well as full-field transmission X-ray microscopes (TXM) allow the required spatial resolution to study individual nanostructures. In the soft X-ray energy range only STXM was used so far for NEXAFS studies. Due to its unique setup, the TXM operated by the Helmholtz-Zentrum Berlin (HZB) at the electron storage ring BESSY II is the first one in the soft X-ray range which can be used for NEXAFS spectroscopy studies which will be shown in this review. Here we will give an overview of the different microscopes used for NEXAFS studies and describe their advantages and disadvantages for different samples.

  17. Nanoscale Electric Characteristics and Oriented Assembly of Halobacterium salinarum Membrane Revealed by Electric Force Microscopy

    Directory of Open Access Journals (Sweden)

    Denghua Li

    2016-11-01

    Full Text Available Purple membranes (PM of the bacteria Halobacterium salinarum are a unique natural membrane where bacteriorhodopsin (BR can convert photon energy and pump protons. Elucidating the electronic properties of biomembranes is critical for revealing biological mechanisms and developing new devices. We report here the electric properties of PMs studied by using multi-functional electric force microscopy (EFM at the nanoscale. The topography, surface potential, and dielectric capacity of PMs were imaged and quantitatively measured in parallel. Two orientations of PMs were identified by EFM because of its high resolution in differentiating electrical characteristics. The extracellular (EC sides were more negative than the cytoplasmic (CP side by 8 mV. The direction of potential difference may facilitate movement of protons across the membrane and thus play important roles in proton pumping. Unlike the side-dependent surface potentials observed in PM, the EFM capacitive response was independent of the side and was measured to be at a dC/dz value of ~5.25 nF/m. Furthermore, by modification of PM with de novo peptides based on peptide-protein interaction, directional oriented PM assembly on silicon substrate was obtained for technical devices. This work develops a new method for studying membrane nanoelectronics and exploring the bioelectric application at the nanoscale.

  18. Interactions with nanoscale topography: adhesion quantification and signal transduction in cells of osteogenic and multipotent lineage.

    Science.gov (United States)

    Biggs, Manus J P; Richards, R Geoff; Gadegaard, Nikolaj; McMurray, Rebecca J; Affrossman, Stanley; Wilkinson, Chris D W; Oreffo, Richard O C; Dalby, Mathew J

    2009-10-01

    Polymeric medical devices widely used in orthopedic surgery play key roles in fracture fixation and orthopedic implant design. Topographical modification and surface micro-roughness of these devices regulate cellular adhesion, a process fundamental in the initiation of osteoinduction and osteogenesis. Advances in fabrication techniques have evolved the field of surface modification; in particular, nanotechnology has allowed the development of nanoscale substrates for the investigation into cell-nanofeature interactions. In this study human osteoblasts (HOBs) were cultured on ordered nanoscale pits and random nano "craters" and "islands". Adhesion subtypes were quantified by immunofluorescent microscopy and cell-substrate interactions investigated via immuno-scanning electron microscopy. To investigate the effects of these substrates on cellular function 1.7 k microarray analysis was used to establish gene profiles of enriched STRO-1+ progenitor cell populations cultured on these nanotopographies. Nanotopographies affected the formation of adhesions on experimental substrates. Adhesion formation was prominent on planar control substrates and reduced on nanocrater and nanoisland topographies; nanopits, however, were shown to inhibit directly the formation of large adhesions. STRO-1+ progenitor cells cultured on experimental substrates revealed significant changes in genetic expression. This study implicates nanotopographical modification as a significant modulator of osteoblast adhesion and cellular function in mesenchymal populations.

  19. Spin-orbit interaction in quantum dots and quantum wires of correlated electrons - a way to spintronics?

    International Nuclear Information System (INIS)

    Birkholz, Jens Eiko

    2008-01-01

    how the linear conductance and the spin-polarization can be controlled by tuning the spin-orbit interaction in an Aharonov-Bohm interferometer with a quantum dot in one arm. Finally, an estimation of the magnitude of the spin-orbit interaction in e.g. semiconductor heterojunctions shows that the system parameters used in our simulations are achievable in experiments. Therefore, the theoretical results obtained in this thesis might also be observable experimentally pointing out the relevance for future spintronic applications. (orig.)

  20. The Role of Membrane Curvature in Nanoscale Topography-Induced Intracellular Signaling.

    Science.gov (United States)

    Lou, Hsin-Ya; Zhao, Wenting; Zeng, Yongpeng; Cui, Bianxiao

    2018-05-15

    Over the past decade, there has been growing interest in developing biosensors and devices with nanoscale and vertical topography. Vertical nanostructures induce spontaneous cell engulfment, which enhances the cell-probe coupling efficiency and the sensitivity of biosensors. Although local membranes in contact with the nanostructures are found to be fully fluidic for lipid and membrane protein diffusions, cells appear to actively sense and respond to the surface topography presented by vertical nanostructures. For future development of biodevices, it is important to understand how cells interact with these nanostructures and how their presence modulates cellular function and activities. How cells recognize nanoscale surface topography has been an area of active research for two decades before the recent biosensor works. Extensive studies show that surface topographies in the range of tens to hundreds of nanometers can significantly affect cell functions, behaviors, and ultimately the cell fate. For example, titanium implants having rough surfaces are better for osteoblast attachment and host-implant integration than those with smooth surfaces. At the cellular level, nanoscale surface topography has been shown by a large number of studies to modulate cell attachment, activity, and differentiation. However, a mechanistic understanding of how cells interact and respond to nanoscale topographic features is still lacking. In this Account, we focus on some recent studies that support a new mechanism that local membrane curvature induced by nanoscale topography directly acts as a biochemical signal to induce intracellular signaling, which we refer to as the curvature hypothesis. The curvature hypothesis proposes that some intracellular proteins can recognize membrane curvatures of a certain range at the cell-to-material interface. These proteins then recruit and activate downstream components to modulate cell signaling and behavior. We discuss current technologies

  1. Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures

    Science.gov (United States)

    Kaul, Anupama B.; Megerian, Krikor G.; Von Allmen, Paul A.; Baron, Richard L.

    2010-01-01

    Plasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are

  2. Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

    KAUST Repository

    Hota, Mrinal Kanti

    2015-02-23

    Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

  3. Sub-picowatt/kelvin resistive thermometry for probing nanoscale thermal transport.

    Science.gov (United States)

    Zheng, Jianlin; Wingert, Matthew C; Dechaumphai, Edward; Chen, Renkun

    2013-11-01

    Advanced instrumentation in thermometry holds the key for experimentally probing fundamental heat transfer physics. However, instrumentation with simultaneously high thermometry resolution and low parasitic heat conduction is still not available today. Here we report a resistive thermometry scheme with ~50 μK temperature resolution and ~0.25 pW/K thermal conductance resolution, which is achieved through schemes using both modulated heating and common mode noise rejection. The suspended devices used herein have been specifically designed to possess short thermal time constants and minimal attenuation effects associated with the modulated heating current. Furthermore, we have systematically characterized the parasitic background heat conductance, which is shown to be significantly reduced using the new device design and can be effectively eliminated using a "canceling" scheme. Our results pave the way for probing fundamental nanoscale thermal transport processes using a general scheme based on resistive thermometry.

  4. The synthesis and properties of nanoscale ionic materials

    KAUST Repository

    Rodriguez, Robert Salgado; Herrer, Rafael; Bourlinos, Athanasios B.; Li, Ruipeng; Amassian, Aram; Archer, Lynden A.; Giannelis, Emmanuel P.

    2010-01-01

    In this article we discuss the effect of constituents on structure, flow, and thermal properties of nanoscale ionic materials (NIMs). NIMs are a new class of nanohybrids consisting of a nanometer-sized core, a charged corona covalently attached

  5. Quantum dynamics in nanoscale magnets in dissipative environments

    NARCIS (Netherlands)

    Miyashita, S; Saito, K; Kobayashi, H.; de Raedt, H.A.

    2000-01-01

    In discrete energy structure of nanoscale magnets, nonadiabatic transitions at avoided level crossings lead to fundamental processes of dynamics of magnetizations. The thermal environment causes dissipative effects on these processes. In this paper we review the features of the nonadiabatic

  6. Democratization of Nanoscale Imaging and Sensing Tools Using Photonics.

    Science.gov (United States)

    McLeod, Euan; Wei, Qingshan; Ozcan, Aydogan

    2015-07-07

    Providing means for researchers and citizen scientists in the developing world to perform advanced measurements with nanoscale precision can help to accelerate the rate of discovery and invention as well as improve higher education and the training of the next generation of scientists and engineers worldwide. Here, we review some of the recent progress toward making optical nanoscale measurement tools more cost-effective, field-portable, and accessible to a significantly larger group of researchers and educators. We divide our review into two main sections: label-based nanoscale imaging and sensing tools, which primarily involve fluorescent approaches, and label-free nanoscale measurement tools, which include light scattering sensors, interferometric methods, photonic crystal sensors, and plasmonic sensors. For each of these areas, we have primarily focused on approaches that have either demonstrated operation outside of a traditional laboratory setting, including for example integration with mobile phones, or exhibited the potential for such operation in the near future.

  7. Abstractocyte: A Visual Tool for Exploring Nanoscale Astroglial Cells

    KAUST Repository

    Mohammed, Haneen

    2017-01-01

    This thesis presents the design and implementation of Abstractocyte, a system for the visual analysis of astrocytes, and their relation to neurons, in nanoscale volumes of brain tissue. Astrocytes are glial cells, i.e., non-neuronal cells

  8. Geometrical tuning of nanoscale split-ring resonators

    DEFF Research Database (Denmark)

    Jeppesen, Claus; Kristensen, Anders; Xiao, Sanshui

    2010-01-01

    We investigate the capacitance tuning of nanoscale split-ring resonators. An LC-model predicts a simple dependence of resonance frequency on slit aspect ratio. Experimental and numerical data follow the predictions of the LC-model....

  9. Nanoscale Test Strips for Multiplexed Blood Analysis, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of our nanoscale test strips, or nanostrips, is to provide rapid, low-cost, powerful multiplexed analyses in a diminutive form so that whole body health...

  10. Quantum Materials at the Nanoscale - Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, Stephen Lance [Univ. of Illinois, Urbana, IL (United States). Dept. of Physics

    2016-01-11

    The central aim of the Quantum Materials at the Nanoscale (QMN) cluster was to understand and control collective behavior involving the interplay of spins, orbitals, and charges, which governs many scientifically interesting and technologically important phenomena in numerous complex materials. Because these phenomena involve various competing interactions, and influence properties on many different length and energy scales in complex materials, tackling this important area of study motivated a collaborative effort that combined the diverse capabilities of QMN cluster experimentalists, the essential theoretical analysis provided by QMN cluster theorists, and the outstanding facilities and staff of the FSMRL. During the funding period 2007-2014, the DOE cluster grant for the Quantum Materials at the Nanoscale (QMN) cluster supported, at various times, 15 different faculty members (14 in Physics and 1 in Materials Science and Engineering), 7 postdoctoral research associates, and 57 physics and materials science PhD students. 41 of these PhD students have since graduated and have gone on to a variety of advanced technical positions at universities, industries, and national labs: 25 obtained postdoctoral positions at universities (14), industrial labs (2 at IBM), DOE national facilities (3 at Argonne National Laboratory, 1 at Brookhaven National Lab, 1 at Lawrence Berkeley National Lab, and 1 at Sandia National Lab), and other federal facilities (2 at NIST); 13 took various industrial positions, including positions at Intel (5), Quantum Design (1), Lasque Industries (1), Amazon (1), Bloomberg (1), and J.P. Morgan (1). Thus, the QMN grant provided the essential support for training a large number of technically advanced personnel who have now entered key national facilities, industries, and institutions. Additionally, during the period 2007-2015, the QMN cluster produced 159 publications (see pages 14-23), including 23 papers published in Physical Review Letters; 16

  11. Nanoscale Reinforced, Polymer Derived Ceramic Matrix Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Rajendra Bordia

    2009-07-31

    The goal of this project was to explore and develop a novel class of nanoscale reinforced ceramic coatings for high temperature (600-1000 C) corrosion protection of metallic components in a coal-fired environment. It was focused on developing coatings that are easy to process and low cost. The approach was to use high-yield preceramic polymers loaded with nano-size fillers. The complex interplay of the particles in the polymer, their role in controlling shrinkage and phase evolution during thermal treatment, resulting densification and microstructural evolution, mechanical properties and effectiveness as corrosion protection coatings were investigated. Fe-and Ni-based alloys currently used in coal-fired environments do not possess the requisite corrosion and oxidation resistance for next generation of advanced power systems. One example of this is the power plants that use ultra supercritical steam as the working fluid. The increase in thermal efficiency of the plant and decrease in pollutant emissions are only possible by changing the properties of steam from supercritical to ultra supercritical. However, the conditions, 650 C and 34.5 MPa, are too severe and result in higher rate of corrosion due to higher metal temperatures. Coating the metallic components with ceramics that are resistant to corrosion, oxidation and erosion, is an economical and immediate solution to this problem. Good high temperature corrosion protection ceramic coatings for metallic structures must have a set of properties that are difficult to achieve using established processing techniques. The required properties include ease of coating complex shapes, low processing temperatures, thermal expansion match with metallic structures and good mechanical and chemical properties. Nanoscale reinforced composite coatings in which the matrix is derived from preceramic polymers have the potential to meet these requirements. The research was focused on developing suitable material systems and

  12. Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2

    Science.gov (United States)

    Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand

    2017-11-01

    Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW → NCCDW transition.

  13. Projected phase-change memory devices.

    Science.gov (United States)

    Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

    2015-09-03

    Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

  14. Single molecules and single nanoparticles as windows to the nanoscale

    Science.gov (United States)

    Caldarola, Martín; Orrit, Michel

    2018-05-01

    Since the first optical detection of single molecules, they have been used as nanometersized optical sensors to explore the physical properties of materials and light-matter interaction at the nanoscale. Understanding nanoscale properties of materials is fundamental for the development of new technology that requires precise control of atoms and molecules when the quantum nature of matter cannot be ignored. In the following lines, we illustrate this journey into nanoscience with some experiments from our group.

  15. Nanoscale volcanoes: accretion of matter at ion-sculpted nanopores.

    Science.gov (United States)

    Mitsui, Toshiyuki; Stein, Derek; Kim, Young-Rok; Hoogerheide, David; Golovchenko, J A

    2006-01-27

    We demonstrate the formation of nanoscale volcano-like structures induced by ion-beam irradiation of nanoscale pores in freestanding silicon nitride membranes. Accreted matter is delivered to the volcanoes from micrometer distances along the surface. Volcano formation accompanies nanopore shrinking and depends on geometrical factors and the presence of a conducting layer on the membrane's back surface. We argue that surface electric fields play an important role in accounting for the experimental observations.

  16. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    Science.gov (United States)

    Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  17. Optical tracking of nanoscale particles in microscale environments

    Science.gov (United States)

    Mathai, P. P.; Liddle, J. A.; Stavis, S. M.

    2016-03-01

    The trajectories of nanoscale particles through microscale environments record useful information about both the particles and the environments. Optical microscopes provide efficient access to this information through measurements of light in the far field from nanoparticles. Such measurements necessarily involve trade-offs in tracking capabilities. This article presents a measurement framework, based on information theory, that facilitates a more systematic understanding of such trade-offs to rationally design tracking systems for diverse applications. This framework includes the degrees of freedom of optical microscopes, which determine the limitations of tracking measurements in theory. In the laboratory, tracking systems are assemblies of sources and sensors, optics and stages, and nanoparticle emitters. The combined characteristics of such systems determine the limitations of tracking measurements in practice. This article reviews this tracking hardware with a focus on the essential functions of nanoparticles as optical emitters and microenvironmental probes. Within these theoretical and practical limitations, experimentalists have implemented a variety of tracking systems with different capabilities. This article reviews a selection of apparatuses and techniques for tracking multiple and single particles by tuning illumination and detection, and by using feedback and confinement to improve the measurements. Prior information is also useful in many tracking systems and measurements, which apply across a broad spectrum of science and technology. In the context of the framework and review of apparatuses and techniques, this article reviews a selection of applications, with particle diffusion serving as a prelude to tracking measurements in biological, fluid, and material systems, fabrication and assembly processes, and engineered devices. In so doing, this review identifies trends and gaps in particle tracking that might influence future research.

  18. Nanoscale tissue engineering: spatial control over cell-materials interactions

    Science.gov (United States)

    Wheeldon, Ian; Farhadi, Arash; Bick, Alexander G.; Jabbari, Esmaiel; Khademhosseini, Ali

    2011-01-01

    Cells interact with the surrounding environment by making tens to hundreds of thousands of nanoscale interactions with extracellular signals and features. The goal of nanoscale tissue engineering is to harness the interactions through nanoscale biomaterials engineering in order to study and direct cellular behaviors. Here, we review the nanoscale tissue engineering technologies for both two- and three-dimensional studies (2- and 3D), and provide a holistic overview of the field. Techniques that can control the average spacing and clustering of cell adhesion ligands are well established and have been highly successful in describing cell adhesion and migration in 2D. Extension of these engineering tools to 3D biomaterials has created many new hydrogel and nanofiber scaffolds technologies that are being used to design in vitro experiments with more physiologically relevant conditions. Researchers are beginning to study complex cell functions in 3D, however, there is a need for biomaterials systems that provide fine control over the nanoscale presentation of bioactive ligands in 3D. Additionally, there is a need for 2- and 3D techniques that can control the nanoscale presentation of multiple bioactive ligands and the temporal changes in cellular microenvironment. PMID:21451238

  19. Monolithic integration of nanoscale tensile specimens and MEMS structures

    International Nuclear Information System (INIS)

    Yilmaz, Mehmet; Kysar, Jeffrey W

    2013-01-01

    Nanoscale materials often have stochastic material properties due to a random distribution of material defects and an insufficient number of defects to ensure a consistent average mechanical response. Current methods to measure the mechanical properties employ MEMS-based actuators. The nanoscale specimens are typically mounted manually onto the load platform, so the boundary conditions have random variations, complicating the experimental measurement of the intrinsic stochasticity of the material properties. Here we show methods for monolithic integration of a nanoscale specimen co-fabricated with the loading platform. The nanoscale specimen is gold with dimensions of ∼40 nm thickness, 350 ± 50 nm width, and 7 μm length and the loading platform is an interdigitated electrode electrostatic actuator. The experiment is performed in a scanning electron microscope and digital image correlation is employed to measure displacements to determine stress and strain. The ultimate tensile strength of the nanocrystalline nanoscale specimen approaches 1 GPa, consistent with measurements made by other nanometer scale sample characterization methods on other material samples at the nanometer scale, as well as gold samples at the nanometer scale. The batch-compatible microfabrication method can be used to create nominally identical nanoscale specimens and boundary conditions for a broad range of materials. (paper)

  20. Nanoscale tissue engineering: spatial control over cell-materials interactions

    International Nuclear Information System (INIS)

    Wheeldon, Ian; Farhadi, Arash; Bick, Alexander G; Khademhosseini, Ali; Jabbari, Esmaiel

    2011-01-01

    Cells interact with the surrounding environment by making tens to hundreds of thousands of nanoscale interactions with extracellular signals and features. The goal of nanoscale tissue engineering is to harness these interactions through nanoscale biomaterials engineering in order to study and direct cellular behavior. Here, we review two- and three-dimensional (2- and 3D) nanoscale tissue engineering technologies, and provide a holistic overview of the field. Techniques that can control the average spacing and clustering of cell adhesion ligands are well established and have been highly successful in describing cell adhesion and migration in 2D. Extension of these engineering tools to 3D biomaterials has created many new hydrogel and nanofiber scaffold technologies that are being used to design in vitro experiments with more physiologically relevant conditions. Researchers are beginning to study complex cell functions in 3D. However, there is a need for biomaterials systems that provide fine control over the nanoscale presentation of bioactive ligands in 3D. Additionally, there is a need for 2- and 3D techniques that can control the nanoscale presentation of multiple bioactive ligands and that can control the temporal changes in the cellular microenvironment. (topical review)

  1. Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

    Science.gov (United States)

    Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

    2017-12-01

    Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

  2. Canopy Dynamics in Nanoscale Ionic Materials

    KAUST Repository

    Jespersen, Michael L.

    2010-07-27

    Nanoscale ionic materials (NIMS) are organic - inorganic hybrids in which a core nanostructure is functionalized with a covalently attached corona and an ionically tethered organic canopy. NIMS are engineered to be liquids under ambient conditions in the absence of solvent and are of interest for a variety of applications. We have used nuclear magnetic resonance (NMR) relaxation and pulse-field gradient (PFG) diffusion experiments to measure the canopy dynamics of NIMS prepared from 18-nm silica cores modified by an alkylsilane monolayer possessing terminal sulfonic acid functionality, paired with an amine-terminated ethylene oxide/propylene oxide block copolymer canopy. Carbon NMR studies show that the block copolymer canopy is mobile both in the bulk and in the NIMS and that the fast (ns) dynamics are insensitive to the presence of the silica nanoparticles. Canopy diffusion in the NIMS is slowed relative to the neat canopy, but not to the degree predicted from the diffusion of hard-sphere particles. Canopy diffusion is not restricted to the surface of the nanoparticles and shows unexpected behavior upon addition of excess canopy. Taken together, these data indicate that the liquid-like behavior in NIMS is due to rapid exchange of the block copolymer canopy between the ionically modified nanoparticles. © 2010 American Chemical Society.

  3. Isolation of nanoscale exosomes using viscoelastic effect

    Science.gov (United States)

    Hu, Guoqing; Liu, Chao

    2017-11-01

    Exosomes, molecular cargos secreted by almost all mammalian cells, are considered as promising biomarkers to identify many diseases including cancers. However, the small size of exosomes (30-200 nm) poses serious challenges on their isolation from the complex media containing a variety of extracellular vesicles (EVs) of different sizes, especially in small sample volumes. Here we develop a viscoelasticity-based microfluidic system to directly separate exosomes from cell culture media or serum in a continuous, size-dependent, and label-free manner. Using a small amount of biocompatible polymer as the additive into the media to control the viscoelastic forces exerted on EVs, we are able to achieve a high separation purity (>90%) and recovery (>80%) of exosomes. The size cutoff in viscoelasticity-based microfluidics can be easily controlled using different PEO concentrations. Based on this size-dependent viscoelastic separation strategy, we envision the handling of diverse nanoscale objects, such as gold nanoparticles, DNA origami structures, and quantum dots. This work was supported financially by National Natural Science Foundation of China (11572334, 91543125).

  4. Canopy Dynamics in Nanoscale Ionic Materials

    KAUST Repository

    Jespersen, Michael L.; Mirau, Peter A.; Meerwall, Ernst von; Vaia, Richard A.; Rodriguez, Robert; Giannelis, Emmanuel P.

    2010-01-01

    Nanoscale ionic materials (NIMS) are organic - inorganic hybrids in which a core nanostructure is functionalized with a covalently attached corona and an ionically tethered organic canopy. NIMS are engineered to be liquids under ambient conditions in the absence of solvent and are of interest for a variety of applications. We have used nuclear magnetic resonance (NMR) relaxation and pulse-field gradient (PFG) diffusion experiments to measure the canopy dynamics of NIMS prepared from 18-nm silica cores modified by an alkylsilane monolayer possessing terminal sulfonic acid functionality, paired with an amine-terminated ethylene oxide/propylene oxide block copolymer canopy. Carbon NMR studies show that the block copolymer canopy is mobile both in the bulk and in the NIMS and that the fast (ns) dynamics are insensitive to the presence of the silica nanoparticles. Canopy diffusion in the NIMS is slowed relative to the neat canopy, but not to the degree predicted from the diffusion of hard-sphere particles. Canopy diffusion is not restricted to the surface of the nanoparticles and shows unexpected behavior upon addition of excess canopy. Taken together, these data indicate that the liquid-like behavior in NIMS is due to rapid exchange of the block copolymer canopy between the ionically modified nanoparticles. © 2010 American Chemical Society.

  5. Personalized Nanomedicine: A Revolution at the Nanoscale

    Directory of Open Access Journals (Sweden)

    Cristina Fornaguera

    2017-10-01

    Full Text Available Nanomedicine is an interdisciplinary research field that results from the application of nanotechnology to medicine and has the potential to significantly improve some current treatments. Specifically, in the field of personalized medicine, it is expected to have a great impact in the near future due to its multiple advantages, namely its versatility to adapt a drug to a cohort of patients. In the present review, the properties and requirements of pharmaceutical dosage forms at the nanoscale, so-called nanomedicines, are been highlighted. An overview of the main current nanomedicines in pre-clinical and clinical development is presented, detailing the challenges to the personalization of these therapies. Next, the process of development of novel nanomedicines is described, from their design in research labs to their arrival on the market, including considerations for the design of nanomedicines adapted to the requirements of the market to achieve safe, effective, and quality products. Finally, attention is given to the point of view of the pharmaceutical industry, including regulation issues applied to the specific case of personalized medicine. The authors expect this review to be a useful overview of the current state of the art of nanomedicine research and industrial production, and the future opportunities of personalized medicine in the upcoming years. The authors encourage the development and marketing of novel personalized nanomedicines.

  6. Nanoscale hydroxyapatite particles for bone tissue engineering.

    Science.gov (United States)

    Zhou, Hongjian; Lee, Jaebeom

    2011-07-01

    Hydroxyapatite (HAp) exhibits excellent biocompatibility with soft tissues such as skin, muscle and gums, making it an ideal candidate for orthopedic and dental implants or components of implants. Synthetic HAp has been widely used in repair of hard tissues, and common uses include bone repair, bone augmentation, as well as coating of implants or acting as fillers in bone or teeth. However, the low mechanical strength of normal HAp ceramics generally restricts its use to low load-bearing applications. Recent advancements in nanoscience and nanotechnology have reignited investigation of nanoscale HAp formation in order to clearly define the small-scale properties of HAp. It has been suggested that nano-HAp may be an ideal biomaterial due to its good biocompatibility and bone integration ability. HAp biomedical material development has benefited significantly from advancements in nanotechnology. This feature article looks afresh at nano-HAp particles, highlighting the importance of size, crystal morphology control, and composites with other inorganic particles for biomedical material development. Copyright © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  7. Nanoscale Test Strips for Multiplexed Blood Analysis

    Science.gov (United States)

    Chan, Eugene

    2015-01-01

    A critical component of the DNA Medicine Institute's Reusable Handheld Electrolyte and Lab Technology for Humans (rHEALTH) sensor are nanoscale test strips, or nanostrips, that enable multiplexed blood analysis. Nanostrips are conceptually similar to the standard urinalysis test strip, but the strips are shrunk down a billionfold to the microscale. Each nanostrip can have several sensor pads that fluoresce in response to different targets in a sample. The strips carry identification tags that permit differentiation of a specific panel from hundreds of other nanostrip panels during a single measurement session. In Phase I of the project, the company fabricated, tested, and demonstrated functional parathyroid hormone and vitamin D nanostrips for bone metabolism, and thrombin aptamer and immunoglobulin G antibody nanostrips. In Phase II, numerous nanostrips were developed to address key space flight-based medical needs: assessment of bone metabolism, immune response, cardiac status, liver metabolism, and lipid profiles. This unique approach holds genuine promise for space-based portable biodiagnostics and for point-of-care (POC) health monitoring and diagnostics here on Earth.

  8. Surface Effects on Nanoscale Gas Flows

    Science.gov (United States)

    Beskok, Ali; Barisik, Murat

    2010-11-01

    3D MD simulations of linear Couette flow of argon gas confined within nano-scale channels are performed in the slip, transition and free molecular flow regimes. The velocity and density profiles show deviations from the kinetic theory based predictions in the near wall region that typically extends three molecular diameters (s) from each surface. Utilizing the Irwin-Kirkwood theorem, stress tensor components for argon gas confined in nano-channels are investigated. Outside the 3s region, three normal stress components are identical, and equal to pressure predicted using the ideal gas law, while the shear stress is a constant. Within the 3s region, the normal stresses become anisotropic and the shear stress shows deviations from its bulk value due to the surface virial effects. Utilizing the kinetic theory and MD predicted shear stress values, the tangential momentum accommodation coefficient for argon gas interacting with FCC structured walls (100) plane facing the fluid is calculated to be 0.75; this value is independent of the Knudsen number. Results show emergence of the 3s region as an additional characteristic length scale in nano-confined gas flows.

  9. Modeling Bloch oscillations in nanoscale Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

    2018-01-01

    Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106

  10. Personalized Nanomedicine: A Revolution at the Nanoscale

    Science.gov (United States)

    García-Celma, Maria José

    2017-01-01

    Nanomedicine is an interdisciplinary research field that results from the application of nanotechnology to medicine and has the potential to significantly improve some current treatments. Specifically, in the field of personalized medicine, it is expected to have a great impact in the near future due to its multiple advantages, namely its versatility to adapt a drug to a cohort of patients. In the present review, the properties and requirements of pharmaceutical dosage forms at the nanoscale, so-called nanomedicines, are been highlighted. An overview of the main current nanomedicines in pre-clinical and clinical development is presented, detailing the challenges to the personalization of these therapies. Next, the process of development of novel nanomedicines is described, from their design in research labs to their arrival on the market, including considerations for the design of nanomedicines adapted to the requirements of the market to achieve safe, effective, and quality products. Finally, attention is given to the point of view of the pharmaceutical industry, including regulation issues applied to the specific case of personalized medicine. The authors expect this review to be a useful overview of the current state of the art of nanomedicine research and industrial production, and the future opportunities of personalized medicine in the upcoming years. The authors encourage the development and marketing of novel personalized nanomedicines. PMID:29023366

  11. Personalized Nanomedicine: A Revolution at the Nanoscale.

    Science.gov (United States)

    Fornaguera, Cristina; García-Celma, Maria José

    2017-10-12

    Nanomedicine is an interdisciplinary research field that results from the application of nanotechnology to medicine and has the potential to significantly improve some current treatments. Specifically, in the field of personalized medicine, it is expected to have a great impact in the near future due to its multiple advantages, namely its versatility to adapt a drug to a cohort of patients. In the present review, the properties and requirements of pharmaceutical dosage forms at the nanoscale, so-called nanomedicines, are been highlighted. An overview of the main current nanomedicines in pre-clinical and clinical development is presented, detailing the challenges to the personalization of these therapies. Next, the process of development of novel nanomedicines is described, from their design in research labs to their arrival on the market, including considerations for the design of nanomedicines adapted to the requirements of the market to achieve safe, effective, and quality products. Finally, attention is given to the point of view of the pharmaceutical industry, including regulation issues applied to the specific case of personalized medicine. The authors expect this review to be a useful overview of the current state of the art of nanomedicine research and industrial production, and the future opportunities of personalized medicine in the upcoming years. The authors encourage the development and marketing of novel personalized nanomedicines.

  12. Nanomaterial Case Studies: Nanoscale Titanium Dioxide ...

    Science.gov (United States)

    This draft document presents two case studies of nanoscale titanium dioxide (nano-TiO2) used (1) to remove arsenic from drinking water and (2) as an active ingredient in topical sunscreen. The draft case studies are organized around a comprehensive environmental assessment approach that combines a product life cycle framework with the risk assessment paradigm. The document does not draw conclusions about potential risks. Rather, the case studies are intended to help identify what needs to be known in order to conduct a comprehensive environmental assessment of the potential risks related to nano-TiO2. This draft document is part of a process that will inform the development of EPA’s research strategy to support nanomaterial risk assessments. The complex properties of various nanomaterials make evaluating them in the abstract or with generalizations difficult if not impossible. Thus, this document focuses on two specific uses of nano-TiO2, as a drinking water treatment and as topical sunscreen. These case studies do not represent completed or even preliminary assessments; rather, they present the structure for identifying and prioritizing research needed to support future assessments.

  13. Quantitative characterization of the influence of the nanoscale morphology of nanostructured surfaces on bacterial adhesion and biofilm formation.

    Directory of Open Access Journals (Sweden)

    Ajay Vikram Singh

    Full Text Available Bacterial infection of implants and prosthetic devices is one of the most common causes of implant failure. The nanostructured surface of biocompatible materials strongly influences the adhesion and proliferation of mammalian cells on solid substrates. The observation of this phenomenon has led to an increased effort to develop new strategies to prevent bacterial adhesion and biofilm formation, primarily through nanoengineering the topology of the materials used in implantable devices. While several studies have demonstrated the influence of nanoscale surface morphology on prokaryotic cell attachment, none have provided a quantitative understanding of this phenomenon. Using supersonic cluster beam deposition, we produced nanostructured titania thin films with controlled and reproducible nanoscale morphology respectively. We characterized the surface morphology; composition and wettability by means of atomic force microscopy, X-ray photoemission spectroscopy and contact angle measurements. We studied how protein adsorption is influenced by the physico-chemical surface parameters. Lastly, we characterized Escherichia coli and Staphylococcus aureus adhesion on nanostructured titania surfaces. Our results show that the increase in surface pore aspect ratio and volume, related to the increase of surface roughness, improves protein adsorption, which in turn downplays bacterial adhesion and biofilm formation. As roughness increases up to about 20 nm, bacterial adhesion and biofilm formation are enhanced; the further increase of roughness causes a significant decrease of bacterial adhesion and inhibits biofilm formation. We interpret the observed trend in bacterial adhesion as the combined effect of passivation and flattening effects induced by morphology-dependent protein adsorption. Our findings demonstrate that bacterial adhesion and biofilm formation on nanostructured titanium oxide surfaces are significantly influenced by nanoscale morphological

  14. Probing Nanoscale Electronic and Magnetic Interaction with Scanning Tunneling Spectroscopy

    DEFF Research Database (Denmark)

    Bork, Jakob

    tunneling microscope (STM). Especially at low temperatures the Kondo resonance is used to probe magnetic interaction with ferromagnetic islands and between two atoms. The latter showing a crossover between Kondo screened atoms and antiferromagnetically coupled atoms close to the quantum critical point....... This is related to research in correlated electron materials such as studies of phase transitions in heavy fermion compounds and magnetic interaction in spintronic research. The capping of cobalt islands on Cu(111) with silver is investigated with STM and photoemission spectroscopy. It is shown that at low...

  15. Outlook and challenges of nano devices, sensors, and MEMS

    CERN Document Server

    Liu, Ziv

    2017-01-01

    This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.

  16. Photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  17. Photovoltaic device

    Science.gov (United States)

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  18. Photovoltaic device

    Science.gov (United States)

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  19. Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I

    International Nuclear Information System (INIS)

    Chaujar, Rishu; Kaur, Ravneet; Gupta, Mridula; Gupta, R S; Saxena, Manoj

    2009-01-01

    This paper discusses a threshold voltage model for novel device structure: gate electrode work function engineered recessed channel (GEWE-RC) nanoscale MOSFET, which combines the advantages of both RC and GEWE structures. In part I, the model accurately predicts (a) surface potential, (b) threshold voltage and (c) sub-threshold slope for single material gate recessed channel (SMG-RC) and GEWE-RC structures. Part II focuses on the development of compact analytical drain current model taking into account the transition regimes from sub-threshold to saturation. Furthermore, the drain conductance evaluation has also been obtained, reflecting relevance of the proposed device for analogue design. The analysis takes into account the effect of gate length and groove depth in order to develop a compact model suitable for device design. The analytical results predicted by the model confirm well with the simulated results. Results in part I also provide valuable design insights in the performance of nanoscale GEWE-RC MOSFET with optimum threshold voltage and negative junction depth (NJD), and hence serves as a tool to optimize important device and technological parameters for 40 nm technology

  20. Nanoscale control of energy and matter in plasma-surface interactions: towards energy-efficient nanotech

    Science.gov (United States)

    Ostrikov, Kostya

    2010-11-01

    This presentation focuses on the plasma issues related to the solution of the grand challenge of directing energy and matter at nanoscales. This ability is critical for the renewable energy and energy-efficient technologies for sustainable future development. It will be discussed how to use environmentally and human health benign non-equilibrium plasma-solid systems and control the elementary processes of plasma-surface interactions to direct the fluxes of energy and matter at multiple temporal and spatial scales. In turn, this makes it possible to achieve the deterministic synthesis of self- organised arrays of metastable nanostructures in the size range beyond the reach of the present-day nanofabrication. Such structures have tantalising prospects to enhance performance of nanomaterials in virtually any area of human activity yet remain almost inaccessible because the Nature's energy minimisation rules allow only a small number of stable equilibrium states. By using precisely controlled and kinetically fast nanoscale transfer of energy and matter under non-equilibrium conditions and harnessing numerous plasma- specific controls of species creation, delivery to the surface, nucleation and large-scale self-organisation of nuclei and nanostructures, the arrays of metastable nanostructures can be created, arranged, stabilised, and further processed to meet the specific requirements of the envisaged applications. These approaches will eventually lead to faster, unprecedentedly- clean, human-health-friendly, and energy-efficient nanoscale synthesis and processing technologies for the next-generation renewable energy and light sources, biomedical devices, information and communication systems, as well as advanced functional materials for applications ranging from basic food, water, health and clean environment needs to national security and space missions.