WorldWideScience

Sample records for nanoscale semiconductor photodetector

  1. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  2. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  3. Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stowe, Ashley C.; Burger, Arnold

    2017-04-04

    A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.

  4. Solution-processed semiconductors for next-generation photodetectors

    Science.gov (United States)

    García de Arquer, F. Pelayo; Armin, Ardalan; Meredith, Paul; Sargent, Edward H.

    2017-01-01

    Efficient light detection is central to modern science and technology. Current photodetectors mainly use photodiodes based on crystalline inorganic elemental semiconductors, such as silicon, or compounds such as III-V semiconductors. Photodetectors made of solution-processed semiconductors — which include organic materials, metal-halide perovskites and quantum dots — have recently emerged as candidates for next-generation light sensing. They combine ease of processing, tailorable optoelectronic properties, facile integration with complementary metal-oxide-semiconductors, compatibility with flexible substrates and good performance. Here, we review the recent advances and the open challenges in the field of solution-processed photodetectors, examining the topic from both the materials and the device perspective and highlighting the potential of the synergistic combination of materials and device engineering. We explore hybrid phototransistors and their potential to overcome trade-offs in noise, gain and speed, as well as the rapid advances in metal-halide perovskite photodiodes and their recent application in narrowband filterless photodetection.

  5. Silicon metal-semiconductor-metal photodetector

    Science.gov (United States)

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  6. Nanoscale chirality in metal and semiconductor nanoparticles.

    Science.gov (United States)

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  7. Physical modeling of semiconductor heterodimensional devices for photodetector applications

    Science.gov (United States)

    Tait, Gregory B.; Nabet, Bahram

    2004-06-01

    Efforts to exploit reduced dimensionality systems in semiconductor devices are presently driven by the continuing need to improve speed performance, transport efficiency, device density, and power management. In this work, we investigate the performance of novel GaAs/AlGaAs and InGaAs/InAlAs heterostructures for high-speed photodetector devices. First, a modulation-doped AlGaAs/GaAs device, suitable for monolithic integration with planar HEMT and FET devices, produces a built-in electric field that aids in the high-speed collection of photogenerated carriers. Surface Schottky electrodes on this structure form a planar interdigitated metal-semiconductor-metal (MSM) device for use at 850-nm wavelength. A second structure, an InGaAs/InAlAs quantum-well MSM photodetector for use at 1550-nm wavelength, utilizes recessed electrodes to contact directly the two-dimensional (2D) transport channel. Unfortunately, rather low Schottky barrier heights on undoped InGaAs lead to excessive dark currents when metal contacts are deposited directly on this material. To remedy this situation, we propose to form barrier-enhancement regions between the optically active 2D-quantum well and the lateral 3D-metal contacts by means of ion-implantation-induced quantum-well intermixing. Results indicate a reduction in dark current of nearly three orders of magnitude. Additionally, the high-speed performance appears not to be adversely affected under normal operating conditions by the potentially deleterious effects of carrier emission and accumulation at these heterojunction interfaces. The Fourier transform of a simulated transient current response to a light impulse indicates an electrical 3-dB bandwidth in excess of 50 GHz in a device with a recessed electrode gap of 1 μm.

  8. Nanoscale Measurements of Magnetism & Spin Coherence in Semiconductors

    Science.gov (United States)

    2016-06-14

    2015 Approved for Public Release; Distribution Unlimited Final Report: Nanoscale Measurements of Magnetism & Spin Coherence in Semiconductors The...floor Princeton, NJ 08544 -2020 31-Jul-2015 ABSTRACT Final Report: Nanoscale Measurements of Magnetism & Spin Coherence in Semiconductors Report Title...Si-on-insultor devices. These SOI devices will provide the samples required for study of spin coherence at a single spin level in a semiconductor

  9. Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

    Science.gov (United States)

    Glinz, Andreas P.; Morrison, Charles B.; Zhu, Zheng

    1998-07-01

    We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.

  10. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    Science.gov (United States)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  11. Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

    Science.gov (United States)

    Biswas, Chandan; Kim, Yonghwan; Lee, Young Hee

    2016-11-01

    Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ~5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies.

  12. Quantum dot-doped porous silicon metal-semiconductor metal photodetector.

    Science.gov (United States)

    Chou, Chia-Man; Cho, Hsing-Tzu; Hsiao, Vincent K S; Yong, Ken-Tye; Law, Wing-Cheung

    2012-06-06

    In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.

  13. Charge transport in nanoscale vertical organic semiconductor pillar devices

    Science.gov (United States)

    Wilbers, Janine G. E.; Xu, Bojian; Bobbert, Peter A.; de Jong, Michel P.; van der Wiel, Wilfred G.

    2017-01-01

    We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106 A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

  14. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    Science.gov (United States)

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process.

  15. Photovoltaic cells and photodetectors made with semiconductor polymers: recent progress

    Science.gov (United States)

    Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

    2000-05-01

    In this presentation, we discuss recent progress on polymer photovoltaic cells and polymer photodetectors. By improving the fill-factor of polymer photovoltaic cells, the energy conversion efficiency was improved significantly to over 4 percent. Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart-windows. Polymer photodetectors with similar device configuration show high photosensitivity, low dark current, large dynamic range, linear intensity dependence, low noise level and fast response time. These parameters are comparable to or even better than their inorganic counterparts. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make them promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

  16. Nanoscale optical imaging of semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Boehmler, Miriam; Hartschuh, Achim [Department Chemie, CeNS, Ludwig-Maximilians-Universitaet Muenchen (Germany); Myalitsin, Anton; Mews, Alf [Department Chemie, Universitaet Hamburg (Germany)

    2011-07-01

    Inorganic semiconducting nanowires (NWs) feature size-related optical properties which make them interesting for a wide range of applications, e.g. nanoscale optoelectronics, sensors, and photovoltaics. Their relevant length scales that are determined by nanowire diameter and exciton Bohr radius, however, can not be resolved by conventional diffraction limited methods. We illustrate the prospects of tip-enhanced near-field optical microscopy (TENOM) as a method to investigate single nanowires. In TENOM a sharp metallic tip acts as optical antenna thereby enhancing the detected signal and increasing the optical resolution to about 15 nm. We present our investigations of CdSe NWs which have been grown by the wet chemical solution liquid solid technique. Here, TENOM provides the possibility to simultaneously image photoluminescence (PL) as well as Raman scattering of individual NWs with nanoscale resolution. We observe spatial variations of the PL intensity and energy on a length scale of about 15 nm indicating crystal phase transitions and diameter fluctuations.

  17. Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications

    Science.gov (United States)

    Morrison, Charles B.; Glinz, Andreas P.; Zhu, Zheng; Bechtel, James H.; Frimel, Steven M.; Roenker, Kenneth P.

    1998-04-01

    Novel interdigitated metal-semiconductor-metal structures offer new approaches for the development of broad-area, high-speed photodetectors to be used in optical free space communications and light detection and ranging applications. Inherent advantages include: lower capacitance than typical p-i-n structures, a wide dynamic range, and ease of fabrication. We have constructed broad area metal- semiconductor-metal photodetectors (MSM-PDs) by means of epitaxial liftoff and grafting technologies. Two computer models have been used to examine the effects of design parameters on the performance of broad-area, high-speed MSM- PD devices. The first model indicates that inverting the membrane so that the electrodes are placed between the non- conducting host substrate and the semiconductor material improves the signal-to-noise ration of the device, expanding its dynamic range. This model suggests that processing of the backside of the semiconductor material with antireflection coatings further improves device performance. Carrier collection behavior described by the second model suggests new electrode configurations for improved high speed operation which can only be applied to an inverted MSM-PD carried on a thin film membrane. A number of different fully passivated large area MSM-PD configurations have been fabricated and tested. Initial dark current data are compared favorably to published results.

  18. Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chen Bin; Yang Yintang; Li Yuejin; Liu Hongxia, E-mail: xidianchenbin@163.co [Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-06-15

    Based on thermionic emission theory, a model of a 6H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector is established with the simulation package ISE-TCAD. A device with 3 {mu}m electrode width (W) and 3 {mu}m electrode spacing (L) is simulated. The findings show that the MSM photodetector has quite a low dark current of 15 pA at 10 V bias and the photocurrent is two orders of magnitude higher than the dark current. The influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device parameters. Simulation results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W = 6 {mu}m, L = 3 {mu}m and W = 3 {mu}m, L = 6 {mu}m, respectively. (semiconductor devices)

  19. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

    Directory of Open Access Journals (Sweden)

    Liwen Sang

    2013-08-01

    Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

  20. Nanoscale doping of compound semiconductors by solid phase dopant diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam; Banerjee, Sanjay K., E-mail: banerjee@ece.utexas.edu [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Chou, Harry [Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712 (United States); Kim, Taegon [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Semiconductor R& D Center, Samsung Electronics Corporation, 1 Samsungjeonja-ro, Hwasung, Kyounggi 445-330 (Korea, Republic of); Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 130-650 (Korea, Republic of)

    2016-03-21

    Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration of 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.

  1. High responsivity 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm-spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A/W at 20 V, and a peak re-sponse wavelength at 290 nm. The fabricated devices held a high DUV to visible re-jection ratio of >103.

  2. A silicon metal-semiconductor-metal photodetector macromodel for circuit simulations

    Science.gov (United States)

    Pancheri, Lucio; Scandiuzzo, Mauro; Betta, Gian-Franco Dalla; Stoppa, David; Nisi, Fabrizio De; Gonzo, Lorenzo; Simoni, Andrea

    2005-02-01

    In this paper, numerical device simulations are used to get insight into the DC and dynamic behavior of a CMOS metal-semiconductor-metal photodetector, to be used as a mixing device for active pixels based on a differential read-out concept. On the basis of simulation results, a simple electrical macromodel of the photosensor has been defined and implemented in the Cadence package using Spectre AHDL. The proposed macromodel is shown to accurately reproduce the numerical device simulation predictions in all the considered operation modes.

  3. Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

    Institute of Scientific and Technical Information of China (English)

    Zhou Jian-Jun; Zheng You-Dou; Wen Bo; Jiang Ruo-Lian; Liu Cheng-Xiang; Ji Xiao-Li; Xie Zi-Li; Chen Dun-Jun; Han Ping; Zhang Rong

    2007-01-01

    In0.3Ga0.7N metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition(MOCVD). The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.

  4. Theoretical optimization of the characteristics of ZnO metal-semiconductor-metal photodetectors

    Institute of Scientific and Technical Information of China (English)

    Ghania Harzallah; Mohamed Remram

    2011-01-01

    A two-dimensional model of a metal-semiconductor-metal (MSM) ZnO-based photodetector (PD) is developed.The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure,the transversal and longitudinal distributions of the electric field,and the distribution of carrier concentration.The ohmicity of the contact has been confirmed.The dark current of MSM PD based ZnO for different structural dimensions are likewise calculated.The calculations are comparable with the experimental results.Therefore,the influence with respect to parameters s (finger spacing) and w (finger width) is studied,which results in the optimization of these parameters.The best optimization found to concur with the experimental results is s =16 μm,w =16 μm,l =250 μm,L =350 μm,where l is the finger length and L is the length of the structure.This optimization provides a simulated dark current equal to 24.5 nA at the polarization of 3 V.Extremely complex,integrated photonic circuits are developed and industrially produced.This is in consideration of the demand for low-cost high-bandwidth circuits,and the demand for knowledge control regarding the manufacturing processes of semiconductor optoelectronic components.The metal-semiconductor-metal (MSM) photodetector (PD) is a good choice in the photo detection field due to the simplicity of manufacture and suitability for monolithic integration[1,2].Indeed,the planar structure of MSM PD results in an exceptionally small capacity,which is highly desired for highbandwidth and low-noise performance[3].%A two-dimensional model of a metal-semiconductor-metal (MSM) ZnO-based photodetector (PD) is developed. The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure, the transversal and longitudinal distributions of the electric field, and the distribution of carrier concentration. The ohmicity of the contact

  5. Photodetectors Based on Two-Dimensional Layer-Structured Hybrid Lead Iodide Perovskite Semiconductors.

    Science.gov (United States)

    Zhou, Jiachen; Chu, Yingli; Huang, Jia

    2016-10-05

    Hybrid lead iodide perovskite semiconductors have attracted intense research interests recently because of their easy fabrication processes and high power conversion efficiencies in photovoltaic applications. Layer-structured materials have interesting properties such as quantum confinement effect and tunable band gap due to the unique two-dimensional crystalline structures. ⟨100⟩-oriented layer-structured perovskite materials are inherited from three-dimensional ABX3 perovskite materials with a generalized formula of (RNH3)2(CH3NH3)n-1MnX3n+1, and adopt the Ruddlesden-Popper type crystalline structure. Here we report the synthesis and investigation of three layer-structured perovskite materials with different layer numbers: (C4H9NH3)2PbI4 (n = 1, one-layered perovskite), (C4H9NH3)2(CH3NH3)Pb2I7 (n = 2, two-layered perovskite) and (C4H9NH3)2(CH3NH3)2Pb3I10 (n = 3, three-layered perovskite). Their photoelectronic properties were investigated in related to their molecular structures. Photodetectors based on these two-dimensional (2D) layer-structured perovskite materials showed tunable photoresponse with short response time in milliseconds. The photodetectors based on three-layered perovskite showed better performances than those of the other two devices, in terms of output current, responsivity, Ilight/Idark ratio, and response time, because of its smaller optical band gap and more condensed microstructure comparing the other two materials. These results revealed the relationship between the molecular structures, film microstructures and the photoresponse properties of 2D layer-structured hybrid perovskites, and demonstrated their potentials as flexible, functional, and tunable semiconductors in optoelectronic applications, by taking advantage of their tunable quantum well molecular structure.

  6. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    Science.gov (United States)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  7. Nanoimprinted Perovskite Nanograting Photodetector with Improved Efficiency.

    Science.gov (United States)

    Wang, Honglei; Haroldson, Ross; Balachandran, Balasubramaniam; Zakhidov, Alex; Sohal, Sandeep; Chan, Julia Y; Zakhidov, Anvar; Hu, Walter

    2016-12-27

    Recently, organolead halide-based perovskites have emerged as promising materials for optoelectronic applications, particularly for photovoltaics, photodetectors, and lasing, with low cost and high performance. Meanwhile, nanoscale photodetectors have attracted tremendous attention toward realizing miniaturized optoelectronic systems, as they offer high sensitivity, ultrafast response, and the capability to detect beyond the diffraction limit. Here we report high-performance nanoscale-patterned perovskite photodetectors implemented by nanoimprint lithography (NIL). The spin-coated lead methylammonium triiodide perovskite shows improved crystallinity and optical properties after NIL. The nanoimprinted metal-semiconductor-metal photodetectors demonstrate significantly improved performance compared to the nonimprinted conventional thin-film devices. The effects of NIL pattern geometries on the optoelectronic characteristics were studied, and the nanograting pattern based photodetectors demonstrated the best performance, showing approximately 35 times improvement on responsivity and 7 times improvement on on/off ratio compared with the nonimprinted devices. The high performance of NIL-nanograting photodetectors likely results from high crystallinity and favored nanostructure morphology, which contribute to higher mobility, longer diffusion length, and better photon absorption. Our results have demonstrated that the NIL is a cost-effective method to fabricate high-performance perovskite nanoscale optoelectronic devices, which may be suitable for manufacturing of high-density perovskite nanophotodetector arrays and to provide integration with state-of-the-art electronic circuits.

  8. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  9. Plasmonic effect-enhanced Ag nanodisk incorporated ZnO/Si metal-semiconductor-metal photodetectors

    Science.gov (United States)

    Kumar, Manjeet; Kojori, Hossein Shokri; Kim, Sung Jin; Park, Hyeong-Ho; Kim, Joondong; Yun, Ju-Hyung

    2016-10-01

    In this work, we present the enhancement of ultraviolet (UV) photodetection of Ag-ZnO thin film deposited by radio frequency magnetron sputtering. The surface morphological, optical, structural, and electrical properties of the deposited thin films were investigated by various characterization techniques. With this Ag-ZnO thin film structure and proper geometry of metal-semiconductor-metal (MSM) interdigitated structure design, photocurrent enhancement has been accomplished. MSM-photodetectors (PDs) using structures of Ag-ZnO gave a 30 times higher magnitude photocurrent at 340 nm of the wavelength. Plasmon-induced hot electrons contributed to improved spectral response to the UV region, while absorption and scattering effect enhanced broadband improvement to a response in the VIS-IR spectrum range. The improvement of Ag-ZnO PD in comparison with ZnO is attributed to the surface plasmon effect using Ag nanodisks. These results indicate that Ag-ZnO thin films can serve as excellent ultraviolet-PD and a very promising candidate for practical applications.

  10. Charge transport in nanoscale lateral and vertical organic semiconductor devices

    NARCIS (Netherlands)

    Xu, Bojian

    2017-01-01

    Organic semiconductors have been drawing more and more attention due to their huge potential for low-cost, flexible, printable electronics and spintronics. In this thesis research, we have investigated charge transport in two organic semiconductors, DXP and P3HT, in different device configurations.

  11. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

    Institute of Scientific and Technical Information of China (English)

    Du Gang; Liu Xiao-Yan; Han Ru-Qi

    2006-01-01

    A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

  12. Impact of Nanograting Phase-Shift on Light Absorption Enhancement in Plasmonics-Based Metal-Semiconductor-Metal Photodetectors

    Directory of Open Access Journals (Sweden)

    Narottam Das

    2011-01-01

    Full Text Available The finite difference time-domain (FDTD method is used to simulate the light absorption enhancement in a plasmonic metal-semiconductor-metal photodetector (MSM-PD structure employing a metal nanograting with phase shifts. The metal fingers of the MSM-PDs are etched at appropriate depths to maximize light absorption through plasmonic effects into a subwavelength aperture. We also analyse the nano-grating phase shift and groove profiles obtained typically in our experiments using focused ion beam milling and atomic force microscopy and discuss the dependency of light absorption enhancement on the nano-gratings phase shift and groove profiles inscribed into MSM-PDs. Our simulation results show that the nano-grating phase shift blue-shifts the wavelength at which the light absorption enhancement is maximum, and that the combined effects of the nano-grating groove shape and phase shift degrade the light absorption enhancement by up to 50%.

  13. Effects of interdigitated platinum finger geometry on spectral response characteristics of germanium metal-semiconductor-metal photodetectors.

    Science.gov (United States)

    Yang, Hyun-Duk; Janardhanam, V; Shim, Kyu-Hwan; Choi, Chel-Jong

    2014-10-01

    We fabricated interdigitated germanium (Ge) metal-semiconductor-metal photodetectors (MSM PDs) with interdigitated platinum (Pt) finger electrodes and investigated the effects of Pt finger width and spacing on their spectral response. An increase in the incident optical power enhances the creation of electron-hole pairs, resulting in a significant increase in photo current. Lowering of the Schottky barrier could be a main cause of the increase in both photo and dark current with increasing applied bias. The manufactured Ge MSM PDs exhibited a considerable spectral response for wavelengths in the range of 1.53-1.56 μm, corresponding to the entire C-band spectrum range. A reduction in the area fraction of the Pt finger electrode in the active region by decreasing and increasing finger width and spacing, respectively, led to an increase in illuminated active area and suppression of dark current, which was responsible for the improvement in responsivity and quantum efficiency of Ge MSM PDs.

  14. Visible and solar-blind AlGaN metal-semiconductor-metal photodetectors grown on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pau, J.L.; Munoz, E.; Sanchez-Garcia, M.A.; Calleja, E. [ISOM, ETSI Telecomunicacion, Ciudad Universitaria, 28040 Madrid (Spain); Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Ciudad Universitaria, 28040 Madrid (Spain)

    2002-08-16

    Visible and solar-blind photodetectors have been fabricated on undoped GaN and AlGaN (x{proportional_to}0.40) layers grown by plasma-assisted molecular beam epitaxy. The use of single and double AlGaN/GaN superlattice buffers and their effects on the grown structures were explored. Metal-semiconductor-metal (MSM) and Schottky barrier photodiodes were characterised. A band-edge responsivity of 49 mA/W for GaN MSM photodiodes was obtained using a single superlattice as buffer. The growth of an additional superlattice as intermediate buffer enhanced the dark current of MSM devices due to the charge accumulation induced by piezoelectric effects inside the superlattice. Schottky barrier photodiodes showed a photosignal below the bandgap with opposite sign to the GaN photoresponse. This signal could be related to the superlattice absorption. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  15. Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

    Science.gov (United States)

    Balestra, F.; Ghibaudo, G.

    2017-02-01

    The physics and performance of various advanced semiconductor devices, which are the most promising for the end of the ITRS roadmap, are investigated in a wide temperature range down to 20 K. The transport parameters in front and/or back channels in fully depleted ultrathin film SOI devices, Trigate, FinFET, Omega-gate nanowire FET and 3D-stacked SiGe nanowire FETs, fabricated with high-k dielectrics/metal gate, elevated source/drain, different channel orientations, shapes and strains, are addressed. The impacts of the gate length, Si film and wire diameter down to 10 nm, are also shown. The variations of the phonon, Coulomb, neutral defects and surface roughness scattering as a function of temperature and device architecture are highlighted. An overview of the influence of temperature on other main electrical parameters of MOSFETs, nanowires FETs and tunnel FETs, such as threshold voltage, subthreshold swing, leakage and driving currents is also given.

  16. Nanoscale contacts to organic molecules based on layered semiconductor substrates

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Sebastian

    2009-06-15

    This work reports on the integration of organic molecules as nanoelectronic device units on semiconductor substrates. Two novel preparation methods for sub-10-nm separated metal electrodes are presented using current microelectronics process technology. The first method utilises AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE) as mold to create planar metal electrodes employing a newly developed, high resolution nanotransfer printing (nTP) process. The second method uses commercially available Silicon-on-Insulator (SOI) substrates as base material for the fabrication of nanogap electrode devices. This sandwich-like material stack consists of a silicon substrate, a thin silicon oxide layer, and a capping silicon layer on top. Electronic transport measurements verified their excellent electrical properties at liquid helium temperatures. Specifically tailored nanogap devices featured an electrode insulation in the GW range even up to room temperature as well as within aqueous electrolyte solution. Finally, the well defined layer architecture facilitated the fabrication of electrodes with gap separations below-10-nm to be directly bridged by molecules. Approximately 12-nm-long conjugated molecules with extended -electron system were assembled onto the devices from solution. A large conductance gap was observed with a steep increase in current at a bias voltage of V{sub T}{approx}{+-}1.5 V. Theoretical calculations based on density functional theory and non-equilibrium Green's function formalism confirmed the measured non-linear IV-characteristics qualitatively and lead to the conclusion that the conductance gap mainly originates from the oxygen containing linker. Temperature dependent investigations of the conductance indicated a hopping charge transport mechanism through the central part of the molecule for bias voltages near but below V{sub T}. (orig.)

  17. Nanoscale metals and semiconductors for the storage of solar energy in chemical bonds

    Science.gov (United States)

    Manthiram, Karthish

    The transduction of electrical energy into chemical bonds represents one potential strategy for storing energy derived from intermittent sources such as solar and wind. Driving the electrochemical reduction of carbon dioxide using light requires (1) developing light absorbers which convert photons into electron-hole pairs and (2) catalysts which utilize these electrons and holes to reduce carbon dioxide and oxidize water, respectively. For both the light absorbers and catalysts, the use of nanoscale particles is advantageous, as charge transport length scales are minimized in the case of nanoscale light absorbers and catalytic surface-area-to-volume ratio is maximized for nanoscale catalysts. In many cases, although semiconductors and metals in the form of thin films and foils are increasingly well-characterized as photoabsorbers and electrocatalysts for carbon dioxide reduction, respectively, the properties of their nanoscale counterparts remain poorly understood. This dissertation explores the nature of the light absorption mode of non-stoichiometric semiconductors which are utilized as light absorbers and the development of catalysts with enhanced stability, activity, and selectivity for carbon dioxide reduction. Chapter 1 provides an overview of the state of development of methods of transducing the energy of photons into chemical bonds. Chapters 2 and 3 investigate the development of stable, active, and selective catalysts for the electrochemical reduction of carbon dioxide. Chapter 2 examines how copper nanoparticles have enhanced activities and selectivities for methanation compared to copper foils. Chapter 3 focuses on the development of strategies to stabilize high-surface-area catalysts to prevent surface area loss during electrochemical carbon dioxide reduction. Chapters 4 and 5 entail a fundamental understanding of the light absorption mode of nanoscale photoabsorbers used in both photoelectrochemical cells and in photovoltaics. Chapter 4 focuses on the

  18. Low-temperature sintering of nanoscale silver paste for semiconductor device interconnection

    Science.gov (United States)

    Bai, Guofeng

    This research has developed a lead-free semiconductor device interconnect technology by studying the processing-microstructure-property relationships of low-temperature sintering of nanoscale silver pastes. The nanoscale silver pastes have been formulated by adding organic components (dispersant, binder and thinner) into nano-silver particles. The selected organic components have the nano-particle polymeric stabilization, paste processing quality adjustment, and non-densifying diffusion retarding functions and thus help the pastes sinter to ˜80% bulk density at temperatures no more than 300°C. It has been found that the low-temperature sintered silver has better electrical, thermal and overall thermomechanical properties compared with the existing semiconductor device interconnecting materials such as solder alloys and conductive epoxies. After solving the organic burnout problems associated with the covered sintering, a lead-free semiconductor device interconnect technology has been designed to be compatible with the existing surface-mounting techniques with potentially low-cost. It has been found that the low-temperature sintered silver joints have high electrical, thermal, and mechanical performance. The reliability of the silver joints has also been studied by the 50-250°C thermal cycling experiment. Finally, the bonging strength drop of the silver joints has been suggested to be ductile fracture in the silver joints as micro-voids nucleated at microscale grain boundaries during the temperature cycling. The low-temperature silver sintering technology has enabled some benchmark packaging concepts and substantial advantages in future applications.

  19. Redesigning photodetector electrodes as an optical antenna.

    Science.gov (United States)

    Fan, Pengyu; Huang, Kevin C Y; Cao, Linyou; Brongersma, Mark L

    2013-02-13

    At the nanoscale, semiconductor and metallic structures naturally exhibit strong, tunable optical resonances that can be utilized to enhance light-matter interaction and to dramatically increase the performance of chipscale photonic elements. Here, we demonstrate that the metallic leads used to extract current from a Ge nanowire (NW) photodetector can be redesigned to serve as optical antennas capable of concentrating light in the NW. The NW itself can also be made optically resonant and an overall performance optimization involves a careful tuning of both resonances. We show that such a procedure can result in broadband absorption enhancements of up to a factor 1.7 at a target wavelength of 660 nm and an ability to control the detector's polarization-dependent response. The results of this study demonstrate the critical importance of performing a joint optimization of the electrical and optical properties of the metallic and semiconductor building blocks in optoelectronic devices with nanoscale components.

  20. Hybrid solar cells with prescribed nanoscale morphologies based on hyperbranched semiconductor nanocrystals.

    Science.gov (United States)

    Gur, Ilan; Fromer, Neil A; Chen, Chih-Ping; Kanaras, Antonios G; Alivisatos, A Paul

    2007-02-01

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate three-dimensional hyperbranched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  1. Photodetector with enhanced light absorption

    Science.gov (United States)

    Kane, James

    1985-01-01

    A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

  2. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

    Institute of Scientific and Technical Information of China (English)

    Junqin Zhang; Yintang Yang; Lifei Lou; Yan Zhao

    2008-01-01

    The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.

  3. Application of Metal-Semiconductor-Metal (MSM) Photodetectors for Transverse and Longitudinal Intra-Bunch Beam Diagnostics

    CERN Document Server

    Steinhagen, R J; Boland, M J; Lucas, T G; Rassool, R P

    2013-01-01

    The performance reach of modern accelerators is often governed by the ability to reliably measure and control the beam stability. In high-brightness lepton and high-energy hadron accelerators, the use of optical diagnostic techniques is becoming more widespread as the required bandwidth, resolution and high RF beam power level involved limit the use of traditional electro-magnetic RF pick-up based methods. This contribution discusses the use of fibre-coupled ultra-fast Metal-Semiconductor-Metal Photodetectors (MSM-PD) as an alternative, dependablemeans to measure signals derived from electro-optical and synchrotron-light based diagnostics systems. It describes the beam studies performed at CERN’s CLIC Test Facility (CTF3) and the Australian Synchrotron to assess the feasibility of this technology as a robust, wide-band and sensitive technique for measuring transverse intra-bunch and bunch-by-bunch beam oscillations, longitudinal beam profiles, un-bunched beam population and beam-halo profiles. The amplifica...

  4. Exotic optoelectronic properties of organic semiconductors with super-controlled nanoscale sizes and molecular shapes.

    Science.gov (United States)

    Hotta, Shu; Yamao, Takeshi; Katagiri, Toshifumi

    2014-03-01

    We present several aspects of thiophene/phenylene co-oligomers (TPCOs). TPCOs are regarded as a newly occurring class of organic semiconductors. These materials are synthesized by hybridizing thiophene and phenylene rings at the molecular level with their various mutual arrangements. These materials are characterized by the super-controlled nanoscale sizes and molecular shapes. These produce peculiar crystallographic structures and high-performance optical and electronic properties. The crystals of TPCOs were obtained through both vapor phase and liquid phase. In the TPCO crystals, the molecules take upright configuration. These cause large carrier mobilities of field-effect transistors and laser oscillations under optical excitations. Spectrally-narrowed emissions (SNEs) were also achieved under weak optical excitation using a mercury lamp. The light-emitting field-effect transistors using these crystals for an active layer have shown the current-injected SNEs when the device was combined with an optical cavity and operated by an alternating-current gate-voltage method. Thus the TPCO materials will play an important role in the future in the fields of nanoscale technology and organic semiconductor materials as well as their optoelectronic device applications.

  5. Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

    Science.gov (United States)

    Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

    2006-09-01

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

  6. Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

    Science.gov (United States)

    Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

    2015-09-01

    Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.

  7. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

    Science.gov (United States)

    Herrbach, J.; Revaux, A.; Vuillaume, D.; Kahn, A.

    2016-08-01

    In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 1013 cm (Hz)1/2 (W)-1, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

  8. Schottky-Like Photodetectors Using Narrow-Gap Semiconductor/silicon Interfaces

    Science.gov (United States)

    Scott, Gregory Stuart

    Infrared focal plane arrays utilizing PtSi/p-Si Schottky barriers have several advantages over narrow-gap semiconductors in the areas of uniformity, ease of manufacture, and potential for integration into monolithic circuits. However, these devices suffer from low quantum efficiency, as the high density of states near the Fermi level of the PtSi limits the efficiency of the optical absorption and hot carrier transport processes. Low transmission from the silicide to the silicon substrate also restricts the photoyield. This thesis presents a novel device concept for infrared detectors which utilizes a thin film of narrow -gap semiconductor deposited on a p-type silicon substrate. The operation of the device would be similar to a Schottky barrier detector, in that carriers would be excited from the overlayer into the substrate. However, the presence of the bandgap in the overlayer should reduce the high density of undesired states near the Fermi level. This would lead to a considerably higher absorption and transport efficiency. The transmission from the overlayer to the substrate should also be greatly increased. Calculations using a diffusion model adapted from one developed by Mercer and Helms for the behavior of Schottky barrier detectors indicate the potential for more than an order of magnitude improvement in quantum efficiency over present technology at a wavelength of 4 mum. The experimental work involved structures formed with films that are easily prepared by thermal evaporation, namely PbTe, SnTe, and Pb_{rm 1-x}Sn_{rm x} Te. Materials analysis showed that stoichiometric, highly oriented polycrystalline films were deposited. The SnTe/p-Si and Pb_{rm 1-x} Sn_{rm x}Te/p -Si devices exhibited Schottky-like behavior, while PbTe/p -Si diodes behaved as photoconductors in weak electrical contact to the substrate. The photoresponse did not display the expected increase in quantum efficiency over Schottky barriers, and investigation of the device electrical

  9. A single crystalline InP nanowire photodetector

    Science.gov (United States)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  10. Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

    Science.gov (United States)

    Balram, Krishna C; Audet, Ross M; Miller, David A B

    2013-04-22

    We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

  11. Perfect light trapping in nanoscale thickness semiconductor films with resonant back reflector and spectrum-splitting structures

    CERN Document Server

    Liu, Jiang-Tao; Yang, Wen; Li, Jun

    2014-01-01

    The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in $<100$ nm thick films on top of one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.

  12. Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer.

    Science.gov (United States)

    Gao, Weiwei; Dos Reis, Roberto; Schelhas, Laura T; Pool, Vanessa L; Toney, Michael F; Yu, Kin Man; Walukiewicz, Wladek

    2016-08-10

    Composites are a class of materials that are formed by mixing two or more components. These materials often have new functional properties compared to their constituent materials. Traditionally composites are formed by self-assembly due to structural dissimilarities or by engineering different layers or structures in the material. Here we report the synthesis of a uniform and stoichiometric composite of CdO and SnTe with a novel nanocomposite structure stabilized by the dissimilarity of the electronic band structure of the constituent materials. The composite has interesting electronic properties which range from highly n-type in CdO to semi-insulating in the intermediate composition range to highly p-type in SnTe. This can be explained by the overlap of the conduction and valence band of the constituent compounds. Ultimately, our work identifies a new class of composite semiconductors in which nanoscale self-organization is driven and stabilized by charge transfer between constituent materials.

  13. Strain-compensated infrared photodetector and photodetector array

    Science.gov (United States)

    Kim, Jin K; Hawkins, Samuel D; Klem, John F; Cich, Michael J

    2013-05-28

    A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

  14. Lateral conduction infrared photodetector

    Science.gov (United States)

    Kim, Jin K.; Carroll, Malcolm S.

    2011-09-20

    A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

  15. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  16. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage

    Science.gov (United States)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage.

  17. A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

    OpenAIRE

    Gammelgaard, Lauge; Bøggild, Peter; Wells, J.W.; Handrup, K.; Hofmann, Ph.; Balslev, M.B.; Hansen, J.E.; Petersen, P.R.E

    2008-01-01

    We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point ...

  18. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

    Science.gov (United States)

    Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

    2016-09-01

    GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ˜33% at an applied bias of 15 V and an input power of 0.8 W m-2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ˜97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

  19. Optically Active 3-Dimensional Semiconductor Quantum Dot Assemblies in Heterogeneous Nanoscale Hosts

    Energy Technology Data Exchange (ETDEWEB)

    Nurmikko, Arto V [Brown Univ., Providence, RI (United States). Division of Engineering

    2017-05-07

    Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

  20. Intermediate type excitons in Schottky barriers of A{sup 3}B{sup 6} layer semiconductors and UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Alekperov, O.Z.; Guseinov, N.M.; Nadjafov, A.I. [Insitute of Physics of National Academy of Sinces of Azerbaijan, H. Javid av. 33, 1133 Baku (Azerbaijan)

    2006-09-15

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A{sup 3}B{sup 6} LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure.

    Science.gov (United States)

    Rangan, Sylvie; Kalyanikar, Malathi; Duan, Junxi; Liu, Gang; Bartynski, Robert Allen; Andrei, Eva Y; Feldman, Leonard; Garfunkel, Eric

    2016-09-01

    Measuring and understanding electric fields in multilayered materials at the nanoscale remains a challenging problem impeding the development of novel devices. At this scale, it is far from obvious that materials can be accurately described by their intrinsic bulk properties, and considerations of the interfaces between layered materials become unavoidable for a complete description of the system's electronic properties. Here, a general approach to the direct measurement of nanoscale internal fields is proposed. Small spot X-ray photoemission was performed on a biased graphene/SiO2/Si structure in order to experimentally determine the potential profile across the system, including discontinuities at the interfaces. Core levels provide a measure of the local potential and are used to reconstruct the potential profile as a function of the depth through the stack. It is found that each interface plays a critical role in establishing the potential across the dielectric, and the origin of the potential discontinuities at each interface is discussed.

  2. Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

    NARCIS (Netherlands)

    Reimer, M.E.; van Kouwen, M.P.; Barkelid, M., et al.

    2011-01-01

    We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias,

  3. Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

    NARCIS (Netherlands)

    Reimer, M.E.; van Kouwen, M.P.; Barkelid, M., et al.

    2011-01-01

    We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, ligh

  4. Lead sulphide nanocrystal photodetector technologies

    Science.gov (United States)

    Saran, Rinku; Curry, Richard J.

    2016-02-01

    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  5. Feasibility Study of Nanoscale Semiconductor Manufacture Using Thermal Dip Pen Nanolithography

    Science.gov (United States)

    2006-09-30

    Haas. M. P.ý Siebbeles. L D. A.; Warman, J. M. To study the effect of the tip temperature on the thickness and Nature 1998. 392. 54. (18) Ginger . D...include thi- In this letter, we describe the use of tDPN to perform ols. biomolecules, sols. silanes, and nanoparticles .2 DPN of- nanoscale...to deposit clusters of con. and metal oxides.2 2 Indium was loaded onto the canti- metal nanoparticles . 2" form etch resists on top of thin me- lever

  6. SEMICONDUCTOR DEVICES Nanoscale strained-Si MOSFET physics and modeling approaches: a review

    Science.gov (United States)

    Chaudhry, Amit; Roy, J. N.; Joshi, Garima

    2010-10-01

    An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

  7. Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

    OpenAIRE

    PARK, J.; Ho, J; Yun, H; Park, M.; Lee, J. H.; Seo, M.; Campbell, Eleanor E. B.; Lee, C; Pyo, S.; Lee, Sangwook

    2013-01-01

    We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

  8. Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes

    Institute of Scientific and Technical Information of China (English)

    Chen Bin; Yang Yintang; Chai Changchun; Wang Ning; Ma Zhenyang; Xie Xuanrong

    2012-01-01

    A novel semicircular electrode metal-semiconductor-metal (SEMSM) ultraviolet detector is modeled,investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2/μm finger radius and 3 μm spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192 × 1011 W-1 at 0.3 V bias.These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.

  9. Optically triggered infrared photodetector.

    Science.gov (United States)

    Ramiro, Íñigo; Martí, Antonio; Antolín, Elisa; López, Esther; Datas, Alejandro; Luque, Antonio; Ripalda, José M; González, Yolanda

    2015-01-14

    We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems ( Rogalski, A.; Antoszewski, J.; Faraone, L. J. Appl. Phys. 2009, 105 (9), 091101).

  10. Electrostatic effects of Au nanoparticles on near-infrared photoluminescence from Si/SiGe due to nanoscale metal/semiconductor contact.

    Science.gov (United States)

    Yin, Yefei; Wang, Ze; Wang, Shuguang; Bai, Yujie; Jiang, Zuimin; Zhong, Zhenyang

    2017-02-21

    The photoluminescence from the Si and the SiGe is comprehensively modified by the Au NPs under the excitation without the surface plasmon resonance. Moreover, it sensitively depends on the size of the Au NPs, the excitation power and the thickness of Si between the Au NPs and the SiGe. A model is proposed in terms of the electrostatic effects of the naturally charged Au NPs due to the electron transferring through the nanoscale metal/semiconductor Schottky junction without an external bias and an external injection of carriers. It well accounts for all those unique PL features. It also reveals that Au NPs can substantially modify the energy band structures, the distribution and the transition of carriers in the nanoscale region below the Au NPs. Our results demonstrate that the Au NPs on semiconductor can efficiently modulate the light-matter interaction from the fundamental aspect of the matter as well as the light.

  11. Characterization, engineering, and reliability of nano-scale high-k dielectrics and semiconductors interfaces

    Science.gov (United States)

    Seo, Kang-Ill

    The continued scaling of silicon complementary metal-oxide-semiconductor devices has lead to a need to replace the SiO2 gate insulator with high-k dielectric oxides, such as ZrO2 and HfO 2-based materials, to maintain a smaller leakage current without losing electrostatic gate control of the channel region. The main objectives of this dissertation are to understand the physical and electronic structure of the high-k/semiconductor interfaces, and based on that understanding, to develop new techniques that can modify or passivate the high-k /semiconductor interfaces for improved performance and reliability. First, we investigated chemical bonding structures and valence band alignments at the high-k (HfO2) and semiconductor (Si, Ge) interfaces using Synchrotron radiation photoemission spectroscopy. We found that highly non-stoichiometric GeOx exists at the HfO2/Ge interface, while stoichiometric SiOx was analyzed at the HfO 2/Si interface. From the valence band spectra the valence band offsets between HfO2 and Si or Ge were determined. Second, we demonstrated that the Zr-silicate interfacial layer (IL) can be formed between ZrO2 and a Si substrate by controlling the solid state reaction between Zr and an underlying SiO2/Si substrate. Incorporation of the metal-silicate layer improved the electrical properties, and reduced the stack equivalent oxide thickness. We also determined changes in chemical bonding at the HfO2/Si interface and associated electrical properties after the SiO2 IL is gettered by a Ti metal overlayer. We found that the removal of a part of SiO2 IL by oxygen-gettering Ti electrodes may be a promising approach for engineering ultrathin EOT without provoking a significant increase in interface trap density. Finally, for the first time, we developed a new technique to incorporate fluorine in high-k stack (HfO2/SiO2), and discovered that the negative bias temperature instability problems, such as positive charge trapping, interface trap generation, and C

  12. Characterization of structural and electronic properties of nanoscale semiconductor device structures using cross-sectional scanning probe microscopy

    Science.gov (United States)

    Rosenthal, Paul Arthur

    Scanning probe microscopy (SPM) offers numerous advantages over metrology tools traditionally used for semiconductor materials and device characterization including high lateral spatial resolution, and relative ease of use. Cross-sectional SPM allows material and device measurements including layer thickness metrology and p-n junction delineation on actual nanoscale device structures. Site-specific SPM allows measurements to be performed on modern devices with real, non-arbitrary geometries including deep-submicron Si device structures. In Chapter II we present theoretical analysis and experimental results of capacitive force microscopy studies of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures. The contrast obtained yields clear delineation of individual device layers based on doping, and enables a precise determination of the difference in basewidth between the two HBT samples examined. We experimentally determine a charged surface state density on the GaAs {110} surface that is consistent with published values. In Chapter III we present cross-sectional scanning capacitance microscopy (SCM) of nanoscale group IV Si device structures. Sample preparation techniques are discussed in context with recent experimental results from the literature. We then presented a theoretical calculation of the flat-band and threshold voltage of Si-MOSFETs as a function of doping including error analysis due to oxide thickness variations. Application to nanoscale FIB implanted Si is presented. The SCM contrast evolves as a function of applied bias as expected based on theoretical modeling of the tip-sample system as an MOS-capacitor. In Chapter IV we apply cross-sectional SCM to directly measure the electronic properties of a 120 nm gate length p-MOSFET including super-halo implants. Bias-dependent SCM images allow us to delineate the individual device regions and image the n+ super-halo implants. We have demonstrated the specific SCM bias conditions necessary for

  13. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

    Directory of Open Access Journals (Sweden)

    Taro eIchimura

    2014-07-01

    Full Text Available Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometr scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies.

  14. Color selective photodetector and methods of making

    Science.gov (United States)

    Walker, Brian J.; Dorn, August; Bulovic, Vladimir; Bawendi, Moungi G.

    2013-03-19

    A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.

  15. A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

    Directory of Open Access Journals (Sweden)

    Bando Yoshio

    2009-08-01

    Full Text Available One-dimensional (1D metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO2, Cu2O, Ga2O3, Fe2O3, In2O3, CdO, CeO2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area.

  16. Colloidal quantum dot photodetectors

    KAUST Repository

    Konstantatos, Gerasimos

    2011-05-01

    We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

  17. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  18. Enhanced responsivity resonant RF photodetectors.

    Science.gov (United States)

    Liu, R; Dev, S; Zhong, Y; Lu, R; Streyer, W; Allen, J W; Allen, M S; Wenner, B R; Gong, S; Wasserman, D

    2016-11-14

    The responsivity of room-temperature, semiconductor-based photodetectors consisting of resonant RF circuits coupled to microstrip buslines is investigated. The dependence of the photodetector response on the semiconductor material and RF circuit geometry is presented, as is the detector response as a function of the spatial position of the incident light. We demonstrate significant improvement in detector response by choice of photoconductive material, and for a given material, by positioning our optical signal to overlap with positions of RF field enhancement. Design of RF circuits with strong field enhancement are demonstrated to further improve detector response. The improved detector response demonstrated offers opportunities for applications in RF photonics, materials metrology, or single read-out multiplexed detector arrays.

  19. Enhanced Responsivity of Photodetectors Realized via Impact Ionization

    Directory of Open Access Journals (Sweden)

    De-Zhen Shen

    2012-01-01

    Full Text Available To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

  20. Nanoscale Semiconductor Electronics

    Science.gov (United States)

    2015-02-25

    create a brand -new process technology for the nano- fabrication of III-V devices. The radiation effects on these devices has been tested in AFRL...34Hydrolization oxidation of AlxGa1-xAs/GaAs quantum well heterostructures and superlattices," Appl . Phys. Lett. 57, 2844, 1990. [7] H. Wada and T. Kamijoh...942, Jun 1997. [8] H. Wada and T. Kamijoh, “Effects of Heat Treatment on Bonding Properties in InP-to- Si Direct Wafer Bonding,” Jpn. J. Appl

  1. A Theoretical Search for Supervelocity Semiconductors

    Science.gov (United States)

    1990-09-30

    Koscielniak, J.L. Pelouard and M.A. Littlejohn, "Intrinsic and Extrinsic Response of GaAs Metal-Semiconductor-Metal Photodetectors," IEEE Photonics...and submicron MOSFETs . L ) -- -V11, TABLE OF CONTENTS 1.0 INTRODUCTION...semiconductor-metal (MSM) photodetector with planar (low interelectrode capacitance ) structure which is of interest for discrete applications and

  2. Plasmonic-Resonant Bowtie Antenna for Carbon Nanotube Photodetectors

    Directory of Open Access Journals (Sweden)

    Hongzhi Chen

    2012-01-01

    Full Text Available The design of bowtie antennas for carbon nanotube (CNT photodetectors has been investigated. CNT photodetectors have shown outstanding performance by using CNT as sensing element. However, detection wavelength is much larger than the diameter of the CNT, resulting in small fill factor. Bowtie antenna can confine light into a subwavelength volume based on plasmonic resonance, thus integrating a bowtie antenna to CNT photodetectors can highly improve photoresponse of the detectors. The electric field enhancement of bowtie antennas was calculated using the device geometry by considering fabrication difficulties and photodetector structure. It is shown that the electric field intensity enhancement increased exponentially with distance reduction between the CNT photodetector to the antenna. A redshift of the peak resonance wavelength is predicted due to the increase of tip angles of the bowtie antennas. Experimental results showed that photocurrent enhancement agreed well with theoretical calculations. Bowtie antennas may find wide applications in nanoscale photonic sensors.

  3. Reliability Assessment and Activation Energy Study of Au and Pd-Coated Cu Wires Post High Temperature Aging in Nanoscale Semiconductor Packaging.

    Science.gov (United States)

    Gan, C L; Hashim, U

    2013-06-01

    Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the influence of wire type on the wearout reliability performance of Au and PdCu wire used in fine pitch BGA package after HTSL stress at various aging temperatures. Failure analysis has been conducted to identify the failure mechanism after HTSL wearout conditions for Au and PdCu ball bonds. Apparent activation energies (Eaa) of both wire types are investigated after HTSL test at 150 °C, 175 °C and 200 °C aging temperatures. Arrhenius plot has been plotted for each ball bond types and the calculated Eaa of PdCu ball bond is 0.85 eV and 1.10 eV for Au ball bond in 110 nm semiconductor device. Obviously Au ball bond is identified with faster IMC formation rate with IMC Kirkendall voiding while PdCu wire exhibits equivalent wearout and or better wearout reliability margin compare to conventional Au wirebond. Lognormal plots have been established and its mean to failure (t50) have been discussed in this paper.

  4. Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

    Institute of Scientific and Technical Information of China (English)

    Chen Bin; Yang Yintang; Chai Changchun; Song Kun; Ma Zhenyang

    2011-01-01

    A two-dimensional model of a 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method.The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson's equation,the current continuity equation and the current density equation.The calculated results are verified with experimental data.With consideration of the reflection and absorption on the metal contacts,a detailed study involving various electrode heights (H),spacings (S) and widths (W) reveals conclusive results in device design.The mechanisms responsible for variations of responsivity with those parameters are analyzed.The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width.In addition,the ultraviolet (UV)-to-visible rejection ratio is > 103.By optimizing the device structure at 10 V bias,a responsivity as high as 180.056 mA/W,a comparable quantum efficiency of 77.93% and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H =50 nm,S =9 μm and W =3μm.

  5. Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Bin; Yang Yintang; Chai Changchun; Song Kun; Ma Zhenyang, E-mail: xidianchenbin@163.com [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2011-08-15

    A two-dimensional model of a 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method. The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson's equation, the current continuity equation and the current density equation. The calculated results are verified with experimental data. With consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode heights (H), spacings (S) and widths (W) reveals conclusive results in device design. The mechanisms responsible for variations of responsivity with those parameters are analyzed. The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width. In addition, the ultraviolet (UV)-to-visible rejection ratio is > 10{sup 3}. By optimizing the device structure at 10 V bias, a responsivity as high as 180.056 mA/W, a comparable quantum efficiency of 77.93% and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H = 50 nm, S = 9 {mu}m and W = 3 {mu}m.

  6. Transmission Line Matrix Method Simulation for Electromagnetic Characteristics of Metal-semiconductor-metal Photodetector%MSM光电探测器电磁场特性的 TLM方法模拟

    Institute of Scientific and Technical Information of China (English)

    石世长; 王庆康

    2001-01-01

    介绍了利用传输线矩阵方法模拟和分析金属-半导体-金属光电探测器指栅电容的频率响应。应用时域电磁场三维TLM方法模拟分析了指栅间距和指栅间的耦合长度与光电探测器截止频率的关系。文中还报道了本项研究所开发的三维电磁场时域模拟器TLMSimulator2.0及其功能。数值实验结果说明模拟器对微波结构的电磁场模拟是精确、有效的,具有很好的应用价值%By using transmission line matrix method, the simulation andanalysis for frequency response of interdigital capacitors in metal-semiconductor-metal photodetector is described. It is showed that the gap and coupling length between fingers of interdigital capacitors contribute to cut-off frequency of photodetector. The paper also reports a three-dimension time-domain electromagnetic simulator (TLM Simulator 2.0) developed for the research. The experiment result proves that the simulation is precise and is useful for electromagnetic simulation of microwave devices.

  7. Energetic distribution of interface states in GaN metal-semiconductor-metal photodetector structure obtained from low-frequency noise measurements

    Science.gov (United States)

    Lee, Jungil; Oh, S. K.; Kim, Seonhee

    2011-12-01

    We show that the low-frequency noise characteristics in Gallium nitride metal-semiconductor-metal photodiode structures where the structure can be treated as two Shottky diodes connected head-to-head, can be used to give useful information about the energetic distribution of interface states. By considering different models for noise generation, we concluded the density of interface states increases towards the conduction band edge in the forbidden energy gap. The experimental results reported in the literature showed quadratic current dependence at low current regions and became super-quadratic at higher current region which can be explained by the random walk of electrons involving interface states at the metal-semiconductor interface which gives quadratic current dependence and linear dependence on the interface states density at the Fermi level. Thus the non-quadratic dependence can be analyzed to give energetic distribution of the interface states.

  8. Photodetector performance enhancement using an electron accelerator controlled by light.

    Science.gov (United States)

    Srithanachai, Itsara; Dilla Zainol, Farrah; Ueamanapong, Surada; Niemcharoen, Surasak; Ali, Jalil; Yupapin, Preecha P

    2012-07-20

    A new method of photodetector performance enhancement using an embedded optical accelerator circuit within the photodetector is proposed. The principle of optical tweezer generation using a light pulse within a PANDA ring is also reviewed. By using a modified add-drop optical filter known as a PANDA microring resonator, which is embedded within the photodetector circuit, the device performance can be improved by using an electron injection technique, in which electrons can be trapped by optical tweezers generated by a PANDA ring resonator. Finally, electrons can move faster within the device via the optical waveguide without trapping center in the silicon bulk to the contact, in which the increase in photodetector current is seen. Simulation results obtained have shown that the device's light currents are increased by the order of four, and the switching time is increased by the order of five. This technique can be used for better photodetector performance and other semiconductor applications in the future.

  9. Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

    Institute of Scientific and Technical Information of China (English)

    CHEN Bin; YANG Yin-Tang; CHAI Chang-Chun; ZHANG Xian-Jun

    2011-01-01

    @@ A model of novel triangular electrode metal-semiconductor-metal (TEMSM) and conventional electrode metal- semiconductor-metal (CEMSM) detectors is established by utilizing the ISE-TCAD simulator.By comparing the simulated results of TEMSM and CEMSM with experimental data, the model validity is verified and the TEMSM detector shows a superiority of a 113% photocurrent increase of 25.4 nA and similar low dark current of 3.16 pA at 30 V bias over the CEMSM device.Furthermore, the electrode angle α, width W and spacing S are optimized to obtain the enhanced device features including high UV-to-visible rejection ratio and large responsivity, etc.Under 30 V bias, the maximum UV-to-visible rejection ratio, comparable responsivity and external quantum efficiency at 31 0nto are 13049, 0.1712A/Wand 68.48% for a TEMSM detector with device parameters of α= 60°, W=3μm and S = 4 μm, respectively.

  10. Nanoscale characterization of the electrical properties of oxide electrodes at the organic semiconductor-oxide electrode interface in organic solar cells

    Science.gov (United States)

    MacDonald, Gordon Alex

    This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide electrodes such as indium tin oxide (ITO) and transparent metal-oxide (MO) electron selective interlayers (ESLs), such as zinc oxide (ZnO), the ability of these materials to rapidly extract photogenerated charges from organic semiconductors (OSCs) used in organic photovoltaic (OPV) cells, and evaluating their impact on the power conversion efficiency (PCE) of OPV devices. In Chapter 1, we will introduce the fundamental principles, benefits, and the key innovations that have advanced this technology. In Chapter 2 of this dissertation, we demonstrate an innovative application of conductive probe atomic force microscopy (CAFM) to map the nanoscale electrical heterogeneity at the interface between ITO, and a well-studied OSC, copper phthalocyanine (CuPc).(MacDonald et al. (2012) ACS Nano, 6, p. 9623) In this work we collected arrays of current-voltage (J-V) curves, using a CAFM probe as the top contact of CuPc/ITO systems, to map the local J-V responses. By comparing J-V responses to known models for charge transport, we were able to determine if the local rate-limiting-step for charge transport is through the OSC (ohmic) or the CuPc/ITO interface (non-ohmic). Chapter 3 focus on the electrical property characterization of RF-magnetron sputtered ZnO (sp-ZnO) ESL films on ITO substrates. We have shown that the energetic alignment of ESLs and the OSC active materials plays a critical role in determining the PCE of OPV devices and UV light soaking sensitivity. We have used a combination of device testing, modeling, and impedance spectroscopy to characterize the effects that energetic alignment has on the charge carrier transport and distribution within the OPV device. In Chapter 4 we demonstrate that the local properties of sp-ZnO films varies as a function of the underlying ITO crystal face. We show that the local ITO crystal face determines

  11. Thallium bromide photodetectors for scintillation detection

    CERN Document Server

    Hitomi, K; Shoji, T; Hiratate, Y; Ishibashi, H; Ishii, M

    2000-01-01

    A wide bandgap compound semiconductor, TlBr, has been investigated as a blue sensitive photodetector material for scintillation detection. The TlBr photodetectors have been fabricated from the TlBr crystals grown by the TMZ method using materials purified by many pass zone refining. The performance of the photodetectors has been evaluated by measuring their leakage current, quantum efficiency, spatial uniformity, direct X-ray detection and scintillation detection characteristics. The photodetectors have shown high quantum efficiency for the blue wavelength region and high spatial uniformity for their optical response. In addition, good direct X-ray detection characteristics with an energy resolution of 4.5 keV FWHM for 22 keV X-rays from a sup 1 sup 0 sup 9 Cd radioactive source have been obtained. Detection of blue scintillation from GSO and LSO scintillators irradiated with a sup 2 sup 2 Na radioactive source has been done successfully by using the photodetectors at room temperature. A clear full-energy pea...

  12. Nanoscale semiconductor Pb1-xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

    Science.gov (United States)

    Lin, Shaoxiong; Zhang, Xin; Shi, Xuezhao; Wei, Jinping; Lu, Daban; Zhang, Yuzhen; Kou, Huanhuan; Wang, Chunming

    2011-04-01

    In this paper the fabrication and characterization of IV-VI semiconductor Pb1-xSnxSe (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn …), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb1-xSnxSe is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

  13. Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars.

    Science.gov (United States)

    Nandy, Suman; Gonçalves, Gonçalo; Pinto, Joana Vaz; Busani, Tito; Figueiredo, Vitor; Pereira, Luís; Paiva Martins, Rodrigo Ferrão; Fortunato, Elvira

    2013-12-07

    The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.

  14. Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor's

    Science.gov (United States)

    Han, In-Shik; Ji, Hee-Hwan; Goo, Tae-Gyu; Yoo, Ook-Sang; Choi, Won-Ho; Na, Min-Ki; Kim, Yong-Goo; Park, Sung-Hyung; Lee, Heui-Seung; Kang, Young-Seok; Kim, Dae-Byung; Lee, Hi-Deok

    2008-04-01

    In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transistor (PMOSFET). PNOs show the improvement of dielectric performance compared to TNO with no change of the device performance. PNOs also show the improvement of NBTI immunity than TNO at low temperature stress, whereas NBTI immunity of PNO with high N concentration can be worse than TNO at high temperature stress. Recovery effect of NBTI degradation of PNO is lower than that of TNO and it is increased as the N concentration is increased in PNO because the dissociated Si dangling bonds and generated positive oxide charges are repassivated and neutralized, respectively. Moreover, complete recovery of ΔVth is dominated by neutralization of positive oxide charges. Therefore, N contents at polycrystalline Si/SiO2 interface as well as N contents at Si/SiO2 interface can affect significantly on NBTI degradation and recovery effect.

  15. Capability of tip-enhanced Raman spectroscopy about nanoscale analysis of strained silicon for semiconductor devices production

    Science.gov (United States)

    Lucia, Arianna; Cacioppo, Onofrio Antonino; Iulianella, Enrico; Latessa, Luca; Moccia, Giuseppe; Passeri, Daniele; Rossi, Marco

    2017-03-01

    Localized strained silicon was observed with a suitable resolution in a real semiconductor device by tip-enhanced Raman spectroscopy (TERS). The device was made via a standard industrial process and its silicon trench isolation structures were used for the silicon strain analysis obtaining results according to finite element method-based simulation data. We have achieved a reliable and repeatable enhancement factor obtaining a trace of strained silicon along the structure with suitable nanometer spatial resolution compatible with IC industry requirements. We demonstrate that the complexity to analyze a real 3D structure, directly from the production lines and not ad hoc realized, entails the challenges to individuate the optimal tip shape, tip contact angle, tip composition, tip positioning system, laser power, and wavelength to achieve an appropriate plasmon resonance inducing a relevant signal to noise ratio. This work gives the base to address the development in TERS optimization for real industrial applications.

  16. Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

    Science.gov (United States)

    2013-01-01

    Phys. Lett. 102, 013509 (2013) Metal-semiconductor-metal photodetectors based on graphene /p-type silicon Schottky junctions Appl. Phys. Lett. 102...devices, such as QD-based laser diodes ,2,3 infrared photodetectors,4,5 single photon emitters,6 and single-electron devices.7 Various techniques have

  17. Spintronics in nanoscale devices

    CERN Document Server

    Hedin, Eric R

    2013-01-01

    By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

  18. Surface degradation mechanism during the fluorine-based plasma etching of a low-k material for nanoscale semiconductors.

    Science.gov (United States)

    Kim, Jong Kyu; Kang, Seung Hyun; Cho, Sung Il; Lee, Sung Ho; Kim, Kyong Nam; Yeom, G Y

    2014-12-01

    The degradation of a low-k material surface during the exposure to plasma etching is one of the most serious problems to be solved for the realization of high speed semiconductor devices. In this study, the factors causing the degradation of a low-k material surface during the etching using fluorine-based plasma etching have been investigated by using XPS. As the plasma factors, active radicals, bombardment energy, and charge of the ions were considered and, as the low-k material, methyl silsesquioxane (MSQ) has been used. The XPS results showed that the ion bombardment during the plasma etching of MSQ affects the breaking of MSQ bone structure by changing the Si-O bonds and Si-C bonds to Si-F mostly, while fluorine-based radicals in the plasma mostly affect the change of Si-CH3 bonds to Si-CH(x)F(y). By removing the charge of the ions during the bombardment, the MSQ properties were further improved. When F intensity which is related to the damage of the MSQ surface is estimated, the bombardment energy, reactive radical density, and charge of the ions were responsible for -18%, -53%, -19% of the F intensity in the MSQ. Therefore, by using the neutral beam etching instead of a conventional ICP etching, the degradation on the MSQ surface estimated by the F intensity remaining on the MSQ surface could be decreased to 10%.

  19. High Performance Dual Band Photodetector Arrays for MWIR/LWIR Imaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposed Phase II program seeks to create dual-band pixel-collocated MWIR/LWIR photodetector arrays based on III-V semiconductor materials in a Type-II...

  20. Silicon-graphene conductive photodetector with ultra-high responsivity

    Science.gov (United States)

    Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

    2017-01-01

    Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

  1. Silicon-graphene conductive photodetector with ultra-high responsivity

    Science.gov (United States)

    Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

    2017-01-01

    Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at ‑25 °C in our experiment.

  2. Photodetector having high speed and sensitivity

    Science.gov (United States)

    Morse, Jeffrey D.; Mariella, Jr., Raymond P.

    1991-01-01

    The present invention provides a photodetector having an advantageous combination of sensitivity and speed; it has a high sensitivity while retaining high speed. In a preferred embodiment, visible light is detected, but in some embodiments, x-rays can be detected, and in other embodiments infrared can be detected. The present invention comprises a photodetector having an active layer, and a recombination layer. The active layer has a surface exposed to light to be detected, and comprises a semiconductor, having a bandgap graded so that carriers formed due to interaction of the active layer with the incident radiation tend to be swept away from the exposed surface. The graded semiconductor material in the active layer preferably comprises Al.sub.1-x Ga.sub.x As. An additional sub-layer of graded In.sub.1-y Ga.sub.y As may be included between the Al.sub.1-x Ga.sub.x As layer and the recombination layer. The recombination layer comprises a semiconductor material having a short recombination time such as a defective GaAs layer grown in a low temperature process. The recombination layer is positioned adjacent to the active layer so that carriers from the active layer tend to be swept into the recombination layer. In an embodiment, the photodetector may comprise one or more additional layers stacked below the active and recombination layers. These additional layers may include another active layer and another recombination layer to absorb radiation not absorbed while passing through the first layers. A photodetector having a stacked configuration may have enhanced sensitivity and responsiveness at selected wavelengths such as infrared.

  3. Study on the spectral response of the Schottky photodetector of GaN

    Institute of Scientific and Technical Information of China (English)

    He Zheng; Kang Yong; Tang Ying-Wen; Li Xue; Fang Jia-Xiong

    2006-01-01

    The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition(MOCVD). The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal-semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.

  4. Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

    Science.gov (United States)

    Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

    2009-07-01

    A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

  5. Traveling-wave photodetector

    Science.gov (United States)

    Hietala, Vincent M.; Vawter, Gregory A.

    1993-01-01

    The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size.

  6. Interfaces in nanoscale photovoltaics

    NARCIS (Netherlands)

    Öner, S.Z.

    2016-01-01

    This thesis deals with material interfaces in nanoscale photovoltaics. Interface properties between the absorbing semiconductor and other employed materials are crucial for an efficient solar cell. While the optical properties are largely unaffected by a few nanometer thin layer, the electronic prop

  7. Interfaces in nanoscale photovoltaics

    NARCIS (Netherlands)

    Öner, S.Z.

    2016-01-01

    This thesis deals with material interfaces in nanoscale photovoltaics. Interface properties between the absorbing semiconductor and other employed materials are crucial for an efficient solar cell. While the optical properties are largely unaffected by a few nanometer thin layer, the electronic prop

  8. Development of an infrared detector: Quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    LU Wei; LI Ling; ZHENG HongLou; XU WenLan; XIONG DaYuan

    2009-01-01

    The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWlP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.

  9. Development of an infrared detector: Quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.

  10. Transparent organic photodetector using a near-infrared absorbing cyanine dye.

    Science.gov (United States)

    Zhang, Hui; Jenatsch, Sandra; De Jonghe, Jelissa; Nüesch, Frank; Steim, Roland; Véron, Anna C; Hany, Roland

    2015-03-24

    Organic photodetectors are interesting for low cost, large area optical sensing applications. Combining organic semiconductors with discrete absorption bands outside the visible wavelength range with transparent and conductive electrodes allows for the fabrication of visibly transparent photodetectors. Visibly transparent photodetectors can have far reaching impact in a number of areas including smart displays, window-integrated electronic circuits and sensors. Here, we demonstrate a near-infrared sensitive, visibly transparent organic photodetector with a very high average visible transmittance of 68.9%. The transmitted light of the photodetector under solar irradiation exhibits excellent transparency colour perception and rendering capabilities. At a wavelength of 850 nm and at -1 V bias, the photoconversion efficiency is 17% and the specific detectivity is 10(12) Jones. Large area photodetectors with an area of 1.6 cm(2) are demonstrated.

  11. Pure carbon nanoscale devices: Nanotube heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Chico, L.; Crespi, V.H.; Benedict, L.X.; Louie, S.G.; Cohen, M.L. [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States)]|[Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

    1996-02-01

    Introduction of pentagon-heptagon pair defects into the hexagonal network of a single carbon nanotube can change the helicity of the tube and alter its electronic structure. Using a tight-binding method to calculate the electronic structure of such systems we show that they behave as nanoscale metal/semiconductor or semiconductor/semiconductor junctions. These junctions could be the building blocks of nanoscale electronic devices made entirely of carbon. {copyright} {ital 1996 The American Physical Society.}

  12. All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance.

    Science.gov (United States)

    Zhou, Lin; Yu, Kai; Yang, Fan; Zheng, Jun; Zuo, Yuhua; Li, Chuanbo; Cheng, Buwen; Wang, Qiming

    2017-02-14

    High-performance all-inorganic perovskite-based metal/semiconductor/metal (MSM) photodetectors with a bilayer composite film of mesoporous TiO2 and CsPbBr3 quantum dots as a photosensitizer were prepared. The photodetectors demonstrated significantly improved on/off ratios of nearly three orders of magnitude compared to those of pure bromine-based perovskite nanocrystal photodetectors with an MSM structure.

  13. Novel Photo-Detectors and Photo-Detector Systems

    OpenAIRE

    Danilov, M.

    2008-01-01

    Recent developments in photo-detectors and photo-detector systems are reviewed. The main emphasis is made on Silicon Photo-Multipliers (SiPM) - novel and very attractive photo-detectors. Their main features are described. Properties of detectors manufactured by different producers are compared. Different applications are discussed including calorimeters, muon detection, tracking, Cherenkov light detection, and time of flight measurements.

  14. Chemistry of Nanoscale Semiconductor Clusters

    CERN Document Server

    Pan, J; Ramakrishna, M V; Pan, Jun; Bahel, Atul; Ramakrishna, Mushti V.

    1995-01-01

    The ground state structures of small silicon clusters are determined through exhaustive tight-binding molecular dynamics simulation studies. These simulations revealed that \\Si{11} is an icosahedron with one missing cap, \\Si{12} is a complete icosahedron, \\Si{13} is a surface capped icosahedron, \\Si{14} is a 4-4-4 layer structure with two caps, \\Si{15} is a 1-5-3-5-1 layer structure, and \\Si{16} is a partially closed cage consisting of five-membered rings. The characteristic feature of these clusters is that they are all surface. Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \\Si{33}, \\Si{39}, and \\Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We provide insights into this observed reactivity pattern through our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fu...

  15. A silicon electromechanical photodetector

    CERN Document Server

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  16. Graphene quantum interference photodetector.

    Science.gov (United States)

    Alam, Mahbub; Voss, Paul L

    2015-01-01

    In this work, a graphene quantum interference (QI) photodetector was simulated in two regimes of operation. The structure consists of a graphene nanoribbon, Mach-Zehnder interferometer (MZI), which exhibits a strongly resonant transmission of electrons of specific energies. In the first regime of operation (that of a linear photodetector), low intensity light couples two resonant energy levels, resulting in scattering and differential transmission of current with an external quantum efficiency of up to 5.2%. In the second regime of operation, full current switching is caused by the phase decoherence of the current due to a strong photon flux in one or both of the interferometer arms in the same MZI structure. Graphene QI photodetectors have several distinct advantages: they are of very small size, they do not require p- and n-doped regions, and they exhibit a high external quantum efficiency.

  17. Graphene quantum interference photodetector

    Directory of Open Access Journals (Sweden)

    Mahbub Alam

    2015-03-01

    Full Text Available In this work, a graphene quantum interference (QI photodetector was simulated in two regimes of operation. The structure consists of a graphene nanoribbon, Mach–Zehnder interferometer (MZI, which exhibits a strongly resonant transmission of electrons of specific energies. In the first regime of operation (that of a linear photodetector, low intensity light couples two resonant energy levels, resulting in scattering and differential transmission of current with an external quantum efficiency of up to 5.2%. In the second regime of operation, full current switching is caused by the phase decoherence of the current due to a strong photon flux in one or both of the interferometer arms in the same MZI structure. Graphene QI photodetectors have several distinct advantages: they are of very small size, they do not require p- and n-doped regions, and they exhibit a high external quantum efficiency.

  18. Photodetectors for scintillator proportionality measurement

    Energy Technology Data Exchange (ETDEWEB)

    Moses, William W. [Lawrence Berkeley National Laboratory (United States)], E-mail: wwmoses@lbl.gov; Choong, Woon-Seng [Lawrence Berkeley National Laboratory (United States); Hull, Giulia; Payne, Steve; Cherepy, Nerine; Valentine, John D. [Lawrence Livermore National Laboratory (United States)

    2009-10-21

    We evaluate photodetectors for use in a Compton Coincidence apparatus designed for measuring scintillator proportionality. There are many requirements placed on the photodetector in these systems, including active area, linearity, and the ability to accurately measure low light levels (which implies high quantum efficiency and high signal-to-noise ratio). Through a combination of measurement and Monte Carlo simulation, we evaluate a number of potential photodetectors, especially photomultiplier tubes and hybrid photodetectors. Of these, we find that the most promising devices available are photomultiplier tubes with high ({approx}50%) quantum efficiency, although hybrid photodetectors with high quantum efficiency would be preferable.

  19. Photodetectors for Scintillator Proportionality Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Moses, William W.; Choong, Woon-Seng; Hull, Giulia; Payne, Steve; Cherepy, Nerine; Valentine, J.D.

    2010-10-18

    We evaluate photodetectors for use in a Compton Coincidence apparatus designed for measuring scintillator proportionality. There are many requirements placed on the photodetector in these systems, including active area, linearity, and the ability to accurately measure low light levels (which implies high quantum efficiency and high signal-to-noise ratio). Through a combination of measurement and Monte Carlo simulation, we evaluate a number of potential photodetectors, especially photomultiplier tubes and hybrid photodetectors. Of these, we find that the most promising devices available are photomultiplier tubes with high ({approx}50%) quantum efficiency, although hybrid photodetectors with high quantum efficiency would be preferable.

  20. Photodetector Characteristics in Visible Light Communication

    KAUST Repository

    Ho, Kang-Ting

    2016-04-01

    Typically, in the semiconductor industry pn heterojunctions have been used as either light-emitting diodes (LED) or photodiodes by applying forward current bias or reverse voltage bias, respectively. However, since both devices use the same structure, the light emitting and detecting properties could be combine in one single device, namely LED-based photodetector. Therefore, by integrating LED-based photodetectors as either transmitter or receiver, optical wireless communication could be easily implemented for bidirectional visible light communication networks at low-cost. Therefore, this dissertation focus on the investigation of the photodetection characteristics of InGaN LED-based photodetectors for visible light communication in the blue region. In this regard, we obtain external quantum efficiency of 10 % and photoresponse rise time of 71 μs at 405-nm illumination, revealing high-performance photodetection characteristics. Furthermore, we use orthogonal frequency division multiplexing quadrature amplitude modulation codification scheme to enlarge the operational bandwidth. Consequently, the transmission rate of the communication is efficiently enhanced up to 420 Mbit/s in visible light communication.

  1. Fully printed flexible carbon nanotube photodetectors

    Science.gov (United States)

    Zhang, Suoming; Cai, Le; Wang, Tongyu; Miao, Jinshui; Sepúlveda, Nelson; Wang, Chuan

    2017-03-01

    Here, we report fully printed flexible photodetectors based on single-wall carbon nanotubes and the study of their electrical characteristics under laser illumination. Due to the photothermal effect and the use of high purity semiconducting carbon nanotubes, the devices exhibit gate-voltage-dependent photoresponse with the positive photocurrent or semiconductor-like behavior (conductivity increases at elevated temperatures) under positive gate biases and the negative photocurrent or metal-like behavior (conductivity decreases at elevated temperatures) under negative gate biases. Mechanism for such photoresponse is attributed to the different temperature dependencies of carrier concentration and carrier mobility, which are two competing factors that ultimately determine the photothermal effect-based photoresponse. The photodetectors built on the polyimide substrate also exhibit superior mechanical compliance and stable photoresponse after thousands of bending cycles down to a curvature radius as small as 3 mm. Furthermore, due to the low thermal conductivity of the plastic substrate, the devices show up to 6.5 fold improvement in responsivity compared to the devices built on the silicon substrate. The results presented here provide a viable path to low cost and high performance flexible photodetectors fabricated entirely by the printing process.

  2. Compact polarization sensors with vertically integrated photodetectors

    Science.gov (United States)

    Onat, Bora M.; Ulu, Goekhan; Unlu, M. Selim

    1997-12-01

    We describe a new method of sensing the linear polarization of light in a single mesa device structure by vertically integrating two photodetectors. The monolithic architecture eliminates the need for several discrete components, such as polarization filters and beam splitters, thus reducing critical alignment requirements and cost for various optical systems. Applications include the simplification of reading heads in magneto-optical (MO) data storage devices and constructing imaging arrays for polarization vision. In imaging, polarization sensing can extract additional information from a scene otherwise not noticeable to the human eye, facilitating remote sensing, material classification, and biological imaging. The operation principle of our vertical cavity polarization detector (VCPD) is based on a resonant cavity enhanced (RCE) photodetector, being vertically integrated with a conventional photodetector. The RCE detector is constructed by integrating a thin absorption region into an asymmetric Fabry-Perot cavity. The top reflector is formed by the semiconductor air interface, while the bottom mirror is a distributed Bragg reflector (DBR). For off-normal incidence of light, the reflectivity of the semiconductor-air interface and DBR are significantly different for TE (s) and TM (p) polarizations. Thus the RCE detector provides resonance enhancement for TE, capturing the TE polarized light in the top detector. For TM polarized light, both reflectivities are small, therefore, light is transmitted to and absorbed in the bottom detector. A large contrast in TE/TM response of the top and bottom detectors is achieved and the linear polarization can be computed from their relative responses. Experimental results displaying good agreement with simulation results have been recently achieved and are presented.

  3. Lateral organic photodetectors for imaging applications

    Science.gov (United States)

    Shafique, Umar; Karim, Karim S.

    2011-03-01

    Organic semiconductor detectors have always been in active research interest of researchers due to its low fabrication cost. Vertical organic detectors have been studied in the past but not much of the works have been done on lateral organic detectors. The lateral design has an advantage over the vertical design that it is easy to fabricate and can be easily integrated with the backplane TFT imager circuit. Integrating an organic photodetectors with TFT imager can improve the over all sensitivity of the imager. However the lateral design limits the fill-factor. Here in our work we propose a new bilayered lateral organic photodetectors with Copper-Phthalocyanine (CUPC) as top and Perylene- Tetracarboxylic Bis- Benzimidazole (PTCBI) as the bottom layer organic material. The bottom organic semiconductor layer work as both, charge transport layer and photon absorption layer. The top and bottom layer provides and heterojunction a potential gradient enough to separate the photo generated excitons in to electrons and holes. The incident photons are absorbed in the two layers active layers giving an exciton. These excitons see a potential barrier at the CUPC-PTCBI heterojunction and separated into holes and electrons. The separated electrons are directed by the external applied electric field and thus give a increase in photocurrent. Lateral organic photodetectors are simple to design and have low dark current. The photo-response of these photo detectors is observed approximately three orders higher in magnitude compare able to its dark response. The dual layer has an advantage of tuning the devices for different absorption wavelengths and were observed more stable comparable to vertical devices.

  4. Energy Use in Nanoscale Manufacturing

    OpenAIRE

    Zhang, Teresa; Boyd, Sarah; Vijayaraghavan, Athulan; Dornfeld, David

    2006-01-01

    This paper presents an overview of key nanoscale manufacturing technologies, and qualitatively examines their fundamental process requirements with respect to energy demand. The processes requirements are related to semiconductor manufacturing, where applicable, and gaps in our understanding of these processes on the production scale are identified as goals for the research community. Finally, the paper proposes a framework for the systematic analysis of energy use in nanoscale manufacturing ...

  5. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  6. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    Science.gov (United States)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  7. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  8. MEMS Tunable nanostructured photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee

    -cavity-enhanced photodetector using dielectric subwavelength gratings as reflectors operating at 1550 nm optical communication wavelength. The main work in this thesis divided equally into device design and process development. The properties of dielectric subwavelength grating are described. The main result of the thesis......) structure. Results from the fabricated devices are reported along with an investigation of the design parameters which influence the performance deviation from the design....

  9. Mid-infrared photodetectors

    Science.gov (United States)

    Guyot-Sionnest, Philippe; Keuleyan, Sean E.; Lhuillier, Emmanuel

    2016-04-19

    Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 .mu.m to 12 .mu.m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

  10. 3D nanopillar optical antenna photodetectors.

    Science.gov (United States)

    Senanayake, Pradeep; Hung, Chung-Hong; Shapiro, Joshua; Scofield, Adam; Lin, Andrew; Williams, Benjamin S; Huffaker, Diana L

    2012-11-05

    We demonstrate 3D surface plasmon photoresponse in nanopillar arrays resulting in enhanced responsivity due to both Localized Surface Plasmon Resonances (LSPRs) and Surface Plasmon Polariton Bloch Waves (SPP-BWs). The LSPRs are excited due to a partial gold shell coating the nanopillar which acts as a 3D Nanopillar Optical Antenna (NOA) in focusing light into the nanopillar. Angular photoresponse measurements show that SPP-BWs can be spectrally coincident with LSPRs to result in a x2 enhancement in responsivity at 1180 nm. Full-wave Finite Difference Time Domain (FDTD) simulations substantiate both the spatial and spectral coupling of the SPP-BW / LSPR for enhanced absorption and the nature of the LSPR. Geometrical control of the 3D NOA and the self-aligned metal hole lattice allows the hybridization of both localized and propagating surface plasmon modes for enhanced absorption. Hybridized plasmonic modes opens up new avenues in optical antenna design in nanoscale photodetectors.

  11. Development of plenoptic infrared camera using low dimensional material based photodetectors

    Science.gov (United States)

    Chen, Liangliang

    Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and

  12. Single quantum dot nanowire photodetectors

    NARCIS (Netherlands)

    Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2010-01-01

    We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the line

  13. Single quantum dot nanowire photodetectors

    NARCIS (Netherlands)

    Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2010-01-01

    We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the

  14. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector; Desenvolvimento do cristal semicondutor de brometo de talio para aplicacoes como detector de radiacao e fotodetector

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de

    2006-07-01

    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by {sup 241}Am (59 keV), {sup 133}Ba (80 e 355 keV), {sup 57}Co (122 keV), {sup 22}Na (511 keV) and {sup 137} Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  15. Patch antenna terahertz photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Palaferri, D.; Todorov, Y., E-mail: yanko.todorov@univ-paris-diderot.fr; Chen, Y. N.; Madeo, J.; Vasanelli, A.; Sirtori, C. [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS-UMS 7162, 75013 Paris (France); Li, L. H.; Davies, A. G.; Linfield, E. H. [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)

    2015-04-20

    We report on the implementation of 5 THz quantum well photodetector exploiting a patch antenna cavity array. The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45° polished facet mesa. Our results demonstrate a clear improvement in responsivity, polarization insensitivity, and background limited performance. Peak detectivities in excess of 5 × 10{sup 12} cmHz{sup 1/2}/W have been obtained, a value comparable with that of the best cryogenic cooled bolometers.

  16. Quantum Well Infrared Photodetectors Physics and Applications

    CERN Document Server

    Schneider, Harald

    2007-01-01

    Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

  17. Nanoscale chemical sensor based on organic thin-film transistors

    Science.gov (United States)

    Wang, Liang; Fine, Daniel; Dodabalapur, Ananth

    2004-12-01

    Nanoscale organic thin-film transistors were fabricated to investigate their chemical sensing properties. The use of a four-terminal geometry ensures that the sensor active area is truly nanoscale, and eliminates undesirable spreading currents. The sensor response was markedly different in nanoscale sensors compared to large-area sensors for the same analyte-semiconductor combination. The chemical sensing mechanisms in both microscale and nanoscale transistors are briefly discussed.

  18. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

    Science.gov (United States)

    Wu, Guangjian; Wang, Xudong; Wang, Peng; Huang, Hai; Chen, Yan; Sun, Shuo; Shen, Hong; Lin, Tie; Wang, Jianlu; Zhang, Shangtao; Bian, Lifeng; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2016-09-01

    Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.

  19. Ellipsometry at the nanoscale

    CERN Document Server

    Hingerl, Kurt

    2013-01-01

    This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics...

  20. Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2011-04-15

    In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

  1. Zinc Oxide Nanoparticle Photodetector

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available A zinc oxide (ZnO nanoparticle photodetector was fabricated using a simple method. Under a 5 V applied bias, its dark current and photocurrent were 1.98×10-8 and 9.42×10-7 A, respectively. In other words, a photocurrent-to-dark-current contrast ratio of 48 was obtained. Under incident light at a wavelength of 375 nm and a 5 V applied bias, the detector’s measured responsivity was 3.75 A/W. The transient time constants measured during the turn-ON and turn-OFF states were τON=204 s and τOFF=486 s, respectively.

  2. Ultrasensitive solution-cast quantum dot photodetectors.

    Science.gov (United States)

    Konstantatos, Gerasimos; Howard, Ian; Fischer, Armin; Hoogland, Sjoerd; Clifford, Jason; Klem, Ethan; Levina, Larissa; Sargent, Edward H

    2006-07-13

    Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D*, the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of PbS colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10(3) A W(-1). The best devices exhibited a normalized detectivity D* of 1.8 x 10(13) jones (1 jones = 1 cm Hz(1/2) W(-1)) at 1.3 microm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D* in the 10(12) jones range at room temperature, whereas the previous record for D* from a photoconductive detector lies at 10(11) jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices.

  3. A differential photodetector: Detecting light modulations using transient photocurrents

    Directory of Open Access Journals (Sweden)

    Louisa Reissig

    2016-01-01

    Full Text Available Inserting an insulating layer (I into a conventional metal-semiconductor-metal (MSM photodiode converts the DC photoresponse into a strong transient signal, highly applicable to modulated signal photodetection. In this study, we demonstrate the intrinsic benefits of organic MISM photodetectors, namely their effective operation under high steady-state lighting, responding only to changes in light intensity, and their ability to react to several light sources simultaneously. Furthermore, the strong interaction at the S/I interface, specific to this architecture, significantly enhances the device photoresponse, resulting in highly efficient differential photodetection, compared to a composite MSM + C device fabricated from identical elements.

  4. Noises of p-i-n UV photodetectors

    Science.gov (United States)

    Gasparyan, Ferdinand V.; Korman, Can E.; Melkonyan, Slavik V.

    2007-06-01

    Investigations of the static characteristics, responsivity, internal noises, and detectivity of the forward biased p-i-n photodetectors made on wide bandgap compensated semiconductors operating in double injection regime are presented. Noise related calculations are performed by utilizing "Impedance Field Method". Numerical simulations are made assessing 4H-SiC and GaN biased p-i-n photodiodes noise related characteristics. It is shown that forward biased p-i-n photodiodes have low level of thermal and generation-recombination noises and high values of sensitivity and detectivity at the room temperature.

  5. Enhanced electron photoemission by collective lattice resonances in plasmonic nanoparticle-array photodetectors and solar cells

    CERN Document Server

    Zhukovsky, Sergei V; Uskov, Alexander V; Protsenko, Igor E; Lavrinenko, Andrei V

    2013-01-01

    We propose to use collective lattice resonances in plasmonic nanoparticle arrays to enhance photoelectron emission in Schottky-barrier photodetectors and solar cells. We show that the interaction of lattice resonances (the Rayleigh anomaly) and individual particle excitations (localized surface plasmon resonances) leads to stronger local field enhancement and significant increase of the photocurrent compared to the case when only individual particle excitations are present. The results can be used to design new photodetectors with highly selective, tunable spectral response, able to detect photons with the energy below the semiconductor bandgap, and to develop solar cells with increased efficiency.

  6. CdSe/beta-Pb0.33V2O5 heterostructures: Nanoscale semiconductor interfaces with tunable energetic configurations for solar energy conversion and storage

    Science.gov (United States)

    Milleville, Christopher C.

    This dissertation focuses on the formation and characterization of semiconductor heterostructures, consisting of light-harvesting cadmium selenide quantum dots (CdSe QDs) and single crystalline lead vanadium oxide nanowires (β-Pb0.33V2O5 NWs), for the purpose of excited-state charge transfer and photocatalytic production of solar fuels. We reported two distinct routes for assembling CdSe/β-Pb0.33V2O5 heterostructures: linker-assisted assembly (LAA) mediated by a bifunctional ligand and successive ionic layer adsorption and reaction (SILAR). In the former case, the thiol end of a molecular linker, cysteine (Cys) is found to bind to the QD surface, whereas a protonated amine moiety interacts electrostatically with the negatively charged NW surface. In the alternative SILAR route, the surface coverage of CdSe on the β-Pb0.33V2O5 NWs is tuned by varying the number of successive precipitation cycles. Hard X-ray photoelectron spectroscopy (HAXPES) measurements revealed that the mid-gap states of β-Pb0.33V2O5 NWs are closely overlapped in energy with the valence band edges of CdSe QDs, suggesting that hole transfer from the valence band of CdSe into the mid-gap states is possible. Preliminary evidence of hole transfer was obtained through photoluminescence quenching experiments. Steady-state and time-resolved photoluminescence measurements on Cys-CdSe dispersions, mixed dispersions of Cys-CdSe QDs and β-Pb0.33V¬2O5 NWs, and mixed dispersions of Cys-CdS QDs and V2O5 revealed a greater extent of quenching of the emission of Cys-CdSe QDs by β Pb0.33V¬2O5 relative to V2O5. V2O5, devoid of mid-gap states, is unable to accept holes from CdSe and therefore should not quench emission to the same extent as β-Pb0.33V¬2O5. The additional quenching was dynamic, consistent with a mechanism involving the transfer of photogenerated holes from CdSe QDs to the mid-gap states of β Pb0.33V2O5. Transient absorption spectroscopy (TA) was used to probe the dynamics of interfacial

  7. Ultrafast and ultrasensitive novel photodetectors

    OpenAIRE

    Kim, Jin; Martínez Garrido, Ramsés Valentín; Stellacci, Francesco; Martínez, Javier; García García, Ricardo

    2010-01-01

    A photodetector is provided that incIudes a FET structure with a channel structure having one or more nanowire structures. Noble metal nanoparticIes are positioned on the channel structure so as to produce a functionalized channel structure. The functionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticIes.

  8. Fast Photoconductive Responses in Organometal Halide Perovskite Photodetectors.

    Science.gov (United States)

    Wang, Fei; Mei, Jingjing; Wang, Yunpeng; Zhang, Ligong; Zhao, Haifeng; Zhao, Dongxu

    2016-02-03

    Inorganic semiconductor-based photodetectors have been suffering from slow response speeds, which are caused by the persistent photoconductivity of semiconductor materials. For realizing high speed optoelectronic devices, the organometal halide perovskite thin films were applied onto the interdigitated (IDT) patterned Au electrodes, and symmetrical structured photoconductive detectors were achieved. The detectors were sensitive to the incident light signals, and the photocurrents of the devices were 2-3 orders of magnitude higher than dark currents. The responsivities of the devices could reach up to 55 mA W(1-). Most importantly, the detectors have a fast response time of less than 20 μs. The light and bias induced dipole rearrangement in organometal perovskite thin films has resulted in the instability of photocurrents, and Ag nanowires could quicken the process of dipole alignment and stabilize the photocurrents of the devices.

  9. Asymmetric MSM sub-bandgap all-silicon photodetector with low dark current.

    Science.gov (United States)

    Casalino, M; Iodice, M; Sirleto, L; Rendina, I; Coppola, G

    2013-11-18

    Design, fabrication, and characterization of an asymmetric metal-semiconductor-metal photodetector, based on internal photoemission effect and integrated into a silicon-on-insulator waveguide, are reported. For this photodetector, a responsivity of 4.5 mA/W has been measured at 1550 nm, making it suitable for power monitoring applications. Because the absorbing metal is deposited strictly around the vertical output facet of the waveguide, a very small contact area of about 3 µm2 is obtained and a transit-time-limited bandwidth of about 1 GHz is demonstrated. Taking advantage of this small area and electrode asymmetry, a significant reduction in the dark current (2.2 nA at -21 V) is achieved. Interestingly, applying reverse voltage, the photodetector is able to tune its cut-off wavelength, extending its range of application into the MID infrared regime.

  10. Fabrication of UV Photodetector on TiO2/Diamond Film.

    Science.gov (United States)

    Liu, Zhangcheng; Li, Fengnan; Li, Shuoye; Hu, Chao; Wang, Wei; Wang, Fei; Lin, Fang; Wang, Hongxing

    2015-09-24

    The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO2/diamond film shows higher responsivity.

  11. Polarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector

    Science.gov (United States)

    Jia, Ran; Zhao, Dongfang; Gao, Naikun; Liu, Duo

    2017-01-01

    Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride (GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au nanoparticles (NPs) drastically increases the photoelectric responsivities by more than 50 times in comparition to the blank GaN photodetector. The observed behaviors are attributed to polarization enhanced charge transfer of optically excited hot electrons from Au NPs to GaN driven by the strong spontaneous polarization field of Ga-polar GaN. Moreover, defect ionization promoted by localized surface plasmon resonances (LSPRs) is also discussed. This novel type of photodetector may shed light on the design and fabrication of photoelectric devices based on polar semiconductors and microstructural defects.

  12. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    Science.gov (United States)

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-01-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors. PMID:27456691

  13. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    Science.gov (United States)

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-07-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors.

  14. Near-Infrared All-Silicon Photodetectors

    Directory of Open Access Journals (Sweden)

    M. Casalino

    2012-01-01

    Full Text Available We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS compatible structures.

  15. Selective nanoscale growth of lattice mismatched materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Chang; Brueck, Steven R. J.

    2017-06-20

    Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

  16. Epitaxial Growth of Large-Grain NiSe Films by Solid-State Reaction for High-Responsivity Photodetector Arrays.

    Science.gov (United States)

    Cai, Caoyuan; Ma, Yang; Jeon, Jaeho; Huang, Fan; Jia, Feixiang; Lai, Shen; Xu, Zhihao; Wu, Congjun; Zhao, Ruiqi; Hao, Yufeng; Chen, Yiqing; Lee, Sungjoo; Wang, Min

    2017-05-01

    Film-based photodetectors have shown superiority for the fabrication of photodetector arrays, which are desired for integrating photodetectors into sensing and imaging systems, such as image sensors. But they usually possess a low responsivity due to low carrier mobility of the film consisting of nanocrystals. Large-grain semiconductor films are expected to fabricate superior-responsivity photodetector arrays. However, the growth of large-grain semiconductor films, normally with a nonlayer structure, is still challenging. Herein, this study introduces a solid-state reaction method, in which the growth rate is supposed to be limited by diffusion and reaction rate, for interface-confined epitaxial growth of nonlayer structured NiSe films with grain size up to micrometer scale on Ni foil. Meanwhile, patterned growth of NiSe films allows the fabrication of NiSe film based photodetector arrays. More importantly, the fabricated photodetector based on as-grown high-quality NiSe films shows a responsivity of 150 A W(-1) in contrast to the value of 0.009 A W(-1) from the photodetector based on as-deposited NiSe film consisting of nanocrystals, indicating a huge responsivity-enhancement up to four orders of magnitude. It is ascribed to the enhanced charge carrier mobility in as-grown NiSe films by dramatically decreasing the amount of grain boundary leading to scattering of charge carrier. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Bandwidth enhancement of MgZnO-based MSM photodetectors by inductive gain peaking

    Science.gov (United States)

    Wang, Ping; Guo, Xinlu; Guo, Lixin; He, Jingfang; Yang, Yintang; Zhang, Zhiyong

    2016-08-01

    For high-speed optical communication applications, the bandwidth of photodetector would be a key limitation. In this work, the bandwidth property of MgZnO-based Metal-Semiconductor-Metal (MSM) photodetector considering RC and transit limitations is investigated on the basis of the series and enhanced gain peaked photodetector circuits proposed by us with different finger widths. To ensure the accuracy of parameters, the high-filed transportation characteristics of MgZnO are investigated by a three-valley ensemble Monte Carlo simulation combined with first principle calculations. The results show that the gain peaking technique, especially the enhanced gain peaking, can improve the bandwidth of MgZnO MSM photodetector to a maximum value of 61.28 GHz, corresponding to a bandwidth enhancement of 49% without undesired effects. Three-dimensional electromagnetic computation is further performed to design and simulate the on-chip-inductor. The value of the simulated inductor is approximately 0.0529 nH, which is in good agreement with the designed value of 0.0569 nH. This work benefits the development of high speed MgZnO MSM photodetector.

  18. Low Noise Interband Cascade Photodetectors

    Science.gov (United States)

    2012-02-28

    National Laboratories, Zhaobing Tian, Zhihua Cai, R. T. Hinkey, L. Li, Tetsuya D. Mishima , Michael B. Santos, and Matthew B. Johnson at the...Phys. 107, No. 5, 054514 (2010). 2. R. Q. Yang, Z. Tian, J. F. Klem, T. D. Mishima , M. B. Santos, and M. B. Johnson, “Interband cascade photovoltaic...2012). 4. Z. Tian, Z. Cai, R. Q. Yang, T. D. Mishima , M. B. Santos, M. B. Johnson, and J. F. Klem, “Interband Cascade Infrared Photodetectors

  19. Photodetectors based on heterostructures for optoelectronic applications

    Science.gov (United States)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  20. Semiconductor High-Energy Radiation Scintillation Detector

    CERN Document Server

    Kastalsky, A; Spivak, B

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. The most important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombi...

  1. Growing Single Crystals of Compound Semiconductors

    Science.gov (United States)

    Naumann, Robert J.; Lehoczky, Sandor L.; Frazier, Donald O.

    1987-01-01

    Defect reduced by preventing melt/furnace contact and suppressing convention. Large crystals of compound semiconductors with few defects grown by proposed new method. Such materials as gallium arsenide and cadmium telluride produced, with quality suitable for very-large-scale integrated circuits or for large focal-plane arrays of photodetectors. Method used on small scale in Earth gravity, but needs microgravity to provide crystals large enough for industrial use.

  2. Improving All-Inorganic Perovskite Photodetectors by Preferred Orientation and Plasmonic Effect.

    Science.gov (United States)

    Dong, Yuhui; Gu, Yu; Zou, Yousheng; Song, Jizhong; Xu, Leimeng; Li, Jianhai; Xue, Jie; Li, Xiaoming; Zeng, Haibo

    2016-10-01

    All-inorganic perovskites have high carrier mobility, long carrier diffusion length, excellent visible light absorption, and well overlapping with localized surface plasmon resonance (LSPR) of noble metal nanocrystals (NCs). The high-performance photodetectors can be constructed by means of the intrinsic outstanding photoelectric properties, especially plasma coupling. Here, for the first time, inorganic perovskite photodetectors are demonstrated with synergetic effect of preferred-orientation film and plasmonic with both high performance and solution process virtues, evidenced by 238% plasmonic enhancement factor and 10(6) on/off ratio. The CsPbBr3 and Au NC inks are assembled into high-quality films by centrifugal-casting and spin-coating, respectively, which lead to the low cost and solution-processed photodetectors. The remarkable near-field enhancement effect induced by the coupling between Au LSPR and CsPbBr3 photogenerated carriers is revealed by finite-difference time-domain simulations. The photodetector exhibits a light on/off ratio of more than 10(6) under 532 nm laser illumination of 4.65 mW cm(-2) . The photocurrent increases from 0.67 to 2.77 μA with centrifugal-casting. Moreover, the photocurrent rises from 245.6 to 831.1 μA with Au NCs plasma enhancement, leading to an enhancement factor of 238%, which is the most optimal report among the LSPR-enhanced photodetectors, to the best of our knowledge. The results of this study suggest that all-inorganic perovskites are promising semiconductors for high-performance solution-processed photodetectors, which can be further enhanced by Au plasmonic effect, and hence have huge potentials in optical communication, safety monitoring, and biological sensing.

  3. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  4. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  5. Black phosphorus photodetector for multispectral, high-resolution imaging.

    Science.gov (United States)

    Engel, Michael; Steiner, Mathias; Avouris, Phaedon

    2014-11-12

    Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this letter, we investigate a multilayer black phosphorus photodetector that is capable of acquiring high-contrast (V > 0.9) images both in the visible (λVIS = 532 nm) as well as in the infrared (λIR = 1550 nm) spectral regime. In a first step, by using photocurrent microscopy, we map the active area of the device and we characterize responsivity and gain. In a second step, by deploying the black phosphorus device as a point-like detector in a confocal microsope setup, we acquire diffraction-limited optical images with submicron resolution. The results demonstrate the usefulness of black phosphorus as an optoelectronic material for hyperspectral imaging applications.

  6. Photonic crystal enhancement of auger-suppressed infrared photodetectors

    Science.gov (United States)

    Djurić, Zoran; Jakšić, Zoran; Ehrfeld, Wolfgang; Schmidt, Andreas; Matić, Milan; Popović, Mirjana

    2001-04-01

    We examine theoretically and experimentally the possibilities to reach room-temperature background-limited operation of narrow-bandgap compound semiconductor photodetectors in (3-14) micrometer infrared wavelength range. To this purpose we consider the combination of non-equilibrium Auger suppression with photonic crystal enhancement (PCE). This means that Auger generation-recombination processes are suppressed utilizing exclusion, extraction or magnetoconcentration effects or their combination. The residual radiative recombination is removed by immersing the detector active area into a photonic crystal and using the benefits of re-absorption (photon recycling) to effectively increase the radiative lifetime. In this manner the total generation-recombination noise is strongly quenched in sufficiently defect-free device materials. It is concluded that the operation of thus enhanced photonic detectors could even approach signal fluctuation limit.

  7. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    Science.gov (United States)

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-01

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.

  8. Nanoscale 2013

    Science.gov (United States)

    Koenders, Ludger; Ducourtieux, Sebastien

    2014-04-01

    The accurate determination of the properties of micro- and nano-structures is essential in research and development. It is also a prerequisite in process control and quality assurance in industry. In most cases, especially at the nanometer range, knowledge of the dimensional properties of structures is the fundamental base, to which further physical properties are linked. Quantitative measurements presuppose reliable and stable instruments, suitable measurement procedures as well as calibration artifacts and methods. This special issue of Measurement Science and Technology presents selected contributions from the NanoScale 2013 seminar held in Paris, France, on 25 and 26 April. It was the 6th Seminar on NanoScale Calibration Standards and Methods and the 10th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized with the Nanometrology Group of the Technical Committee-Length of EURAMET, the Physikalisch-Technische Bundesanstalt and the Laboratoire National de Métrologie et d'Essais. Three satellite meetings related to nanometrology were coupled to the seminar. The first one was an open Symposium on Scanning Probe Microscopy Standardization organized by the ISO/TC 201/SC9 technical committee. The two others were specific meetings focused on two European Metrology Research Projects funded by the European Association of National Metrology Institutes (EURAMET) (see www.euramet.org), the first one focused on the improvement of the traceability for high accuracy devices dealing with sub-nm length measurement and implementing optical interferometers or capacitive sensors (JRP SIB08 subnano), the second one aiming to develop a new metrological traceability for the measurement of the mechanical properties of nano-objects (JRP NEW05 MechProNo). More than 100 experts from industry, calibration laboratories and metrology institutes from around the world joined the NanoScale 2013 Seminar to attend 23 oral and 64 poster

  9. High-Performance Fully Nanostructured Photodetector with Single-Crystalline CdS Nanotubes as Active Layer and Very Long Ag Nanowires as Transparent Electrodes.

    Science.gov (United States)

    An, Qinwei; Meng, Xianquan; Sun, Pan

    2015-10-21

    Long and single-crystalline CdS nanotubes (NTs) have been prepared via a physical evaporation process. A metal-semiconductor-metal full-nanostructured photodetector with CdS NTs as active layer and Ag nanowires (NWs) of low resistivity and high transmissivity as electrodes has been fabricated and characterized. The CdS NTs-based photodetectors exhibit high performance, such as lowest dark currents (0.19 nA) and high photoresponse ratio (Ilight/Idark ≈ 4016) (among CdS nanostructure network photodetectors and NTs netwok photodetectors reported so far) and very low operation voltages (0.5 V). The photoconduction mechanism, including the formation of a Schottky barrier at the interface of Ag NW and CdS NTs and the effect of oxygen adsorption process on the Schottky barrier has also been provided in detail based on the studies of CdS NTs photodetector in air and vacuum. Furthermore, CdS NTs photodetector exhibits an enhanced photosensitivity as compared with CdS NWs photodetector. The enhancement in performance is dependent on the larger surface area of NTs adsorbing more oxygen in air and the microcavity structure of NTs with higher light absorption efficiency and external quantum efficiency. It is believed that CdS NTs can potentially be useful in the designs of 1D CdS-based optoelectronic devices and solar cells.

  10. High-speed binary CMOS image sensor using a high-responsivity MOSFET-type photodetector

    Science.gov (United States)

    Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Choi, Pyung; Shin, Jang-Kyoo

    2015-03-01

    In this paper, a complementary metal oxide semiconductor (CMOS) binary image sensor based on a gate/body-tied (GBT) MOSFET-type photodetector is proposed. The proposed CMOS binary image sensor was simulated and measured using a standard CMOS 0.18-μm process. The GBT MOSFET-type photodetector is composed of a floating gate (n+- polysilicon) tied to the body (n-well) of the p-type MOSFET. The size of the active pixel sensor (APS) using GBT photodetector is smaller than that of APS using the photodiode. This means that the resolution of the image can be increased. The high-gain GBT photodetector has a higher photosensitivity compared to the p-n junction photodiode that is used in a conventional APS. Because GBT has a high sensitivity, fast operation of the binary processing is possible. A CMOS image sensor with the binary processing can be designed with simple circuits composed of a comparator and a Dflip- flop while a complex analog to digital converter (ADC) is not required. In addition, the binary image sensor has low power consumption and high speed operation with the ability to switch back and forth between a binary mode and an analog mode.

  11. A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.

    Science.gov (United States)

    Levell, J W; Giardini, M E; Samuel, I D W

    2010-02-15

    A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200-620 nm range. These devices show promise for use in high sensitivity, low cost UV-visible photodetection and imaging applications.

  12. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity.

    Science.gov (United States)

    Das, K; Mukherjee, S; Manna, S; Ray, S K; Raychaudhuri, A K

    2014-10-01

    We report the fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector. Typical single nanowire devices with diameter of ∼80-100 nm and electrode spacing of ∼1 μm were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, of the order of 10(4) A W(-1), was observed even at zero bias in a single nanowire photodetector with peak responsivity in the near-infrared region. The responsivity was found to increase with increasing bias and decreasing nanowire diameter. Finite element based optical simulation was proposed to explain the diameter dependent performance of a single nanowire. The observed photoresponse is sensitive to the polarization of exciting light source, allowing the device to act as a polarization-dependent near-infrared photodetector.

  13. Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.

    Science.gov (United States)

    Chang, Guo-En; Chen, Shao-Wei; Cheng, H H

    2016-08-08

    We report on tensile-strained Ge/Si0.11Ge0.89 quantum-well (QW) metal-semiconductor-metal (MSM) photodetectors on Si substrates. A tensile strain of 0.21% is introduced into the Ge wells by growing the QW stack on in-situ annealed Ge-on-Si virtual substrates (VS). The optical characterization of Ge/Si0.11Ge0.89 QW MSM photodetectors indicates that the optical response increases to a wavelength of 1.5 μm or higher owing to the strain-induced direct bandgap shrinkage. Analysis of the band structure by using a k · p model suggests that by optimizing the tensile strain and Ge well width, tensile-strained Ge/SiGe QW photodetectors can be designed to cover the telecommunication C-band and beyond for optical telecommunications and on-chip interconnection.

  14. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  15. Experimental Study of MQW RCE Photodetector

    Institute of Scientific and Technical Information of China (English)

    LIU Liyi; LIU Kai; HUANG Hui; HUANG Yongqing; REN Xiaomin; MA Xiaoyu; KANG Xuejun

    2001-01-01

    A multiple-quantum-well resonant-cavity-enhanced photodetector based on GaAs/AlGaAs is described in this paper. This kind of photodetector has not been fabricated in China so far. It has an obvious wavelength selectivity and the quantum efficiency peak at 836 nm with a spectral FWHM of 20 nm. It can be used in wavelength-division multiplexing optical communication systems.

  16. Enhanced Graphene Photodetector with Fractal Metasurface

    DEFF Research Database (Denmark)

    Fan, Jieran; Wang, Di; DeVault, Clayton

    2016-01-01

    We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure.......We designed and fabricated a broadband, polarization-independent photodetector by integrating graphene with a fractal Cayley tree metasurface. Our measurements show an almost uniform, tenfold enhancement in photocurrent generation due to the fractal metasurface structure....

  17. Low Voltage Low Light Imager and Photodetector

    Science.gov (United States)

    Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

    2013-01-01

    Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

  18. Composition and bandgap-graded semiconductor alloy nanowires.

    Science.gov (United States)

    Zhuang, Xiujuan; Ning, C Z; Pan, Anlian

    2012-01-03

    Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide a new material platform for many new multifunctional optoelectronic devices, such as broadly tunable lasers, multispectral photodetectors, broad-band light emitting diodes (LEDs) and high-efficiency solar cells. In this review, we will summarize the recent progress on composition graded semiconductor alloy nanowires with bandgaps graded in a wide range. Depending on different growth methods and material systems, two typical nanowire composition grading approaches will be presented in detail, including composition graded alloy nanowires along a single substrate and those along single nanowires. Furthermore, selected examples of applications of these composition graded semiconductor nanowires will be presented and discussed, including tunable nanolasers, multi-terminal on-nanowire photodetectors, full-spectrum solar cells, and white-light LEDs. Finally, we will make some concluding remarks with future perspectives including opportunities and challenges in this research area.

  19. Growth of AlInN film on GaAs substrate and its application to MSM UV photodetector

    Science.gov (United States)

    Afzal, Naveed; Devarajan, Mutharasu; Ibrahim, Kamarulazizi

    2016-08-01

    AlInN film was grown on n-type GaAs (100) substrate by using reactive magnetron co-sputtering technique at 100 °C. The structural analysis revealed polycrystalline nature of the film with its preferred orientation along (002) plane. The band gap of AlInN was estimated to be 3.39 eV from UV-vis reflectance measurements. In order to fabricate AlInN based metal-semiconductor-metal (MSM) photodetector, platinum (Pt) metal contacts were deposited on the film through RF sputtering. The Pt/AlInN/Pt/GaAs MSM photodetector displayed good responsivity under 365 nm UV light. The current-voltage characteristics of the fabricated photodetector showed significant increase in current upon exposure to 365 nm UV light. The current gain for the MSM photodetector under 365 nm UV light at 5 V bias was recorded to be 29.4 whereas the sensitivity of the photodetector was noted to be 2.9 × 103. The response and recovery time were estimated to be 0.70 and 0.72 s respectively. The fabricated device exhibited excellent stability in ON/OFF switching conditions.

  20. Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

    Science.gov (United States)

    Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

    2016-05-01

    In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

  1. Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization

    Science.gov (United States)

    Asar, Tarık; Özçelik, Süleyman

    2015-12-01

    Germanium thin films were deposited on n-type Silicon substrates with three different sputter power by using DC magnetron sputtering system at room temperature. The structural and morphological properties of the samples have been obtained by means of X-ray diffraction and atomic force microscopy measurements. Then, Germanium metal-semiconductor-metal infrared photodetectors were fabricated on these structures. The carrier recombination lifetime and the diffusion length of the devices were also calculated by using the carrier density and mobility data was obtained from the room temperature Hall Effect measurements. The dark current-voltage measurements of devices were achieved at room temperature. The electrical parameters such as ideality factor, Schottky barrier height, saturation current and series resistance were extracted from dark current-voltage characteristics. Finally, it has been shown that the barrier enhancement of Ge MSM IR photodetector can be achieved by Ge layer optimization.

  2. Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector.

    Science.gov (United States)

    Wu, Zhiqian; Li, Xiaoqiang; Zhong, Huikai; Zhang, Shengjiao; Wang, Peng; Kim, Tae-ho; Kwak, Sung Soo; Liu, Cheng; Chen, Hongsheng; Kim, Sang-Woo; Lin, Shisheng

    2015-07-27

    We report a novel ultraviolet photodetector based on graphene/h-BN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW(-1)), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2~20AW(-1)). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.

  3. A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

    Institute of Scientific and Technical Information of China (English)

    Yu Changliang; Mao Luhong; Xiao Xindong; Xie Sheng; Zhang Shilin

    2009-01-01

    This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic inte grated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photo generated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM pho todetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.

  4. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

    Directory of Open Access Journals (Sweden)

    Eng Png Ching

    2015-01-01

    Full Text Available Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc. and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

  5. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    Science.gov (United States)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW-1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W-1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  6. Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

    Science.gov (United States)

    Durmaz, Habibe; Nothern, Denis; Brummer, Gordie; Moustakas, Theodore D.; Paiella, Roberto

    2016-05-01

    Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a free-standing semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrate. These quantum wells are nearly free of the polarization-induced internal electric fields that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz photodetector design can be implemented. Pronounced photocurrent peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics.

  7. Computational electromagnetic analysis of plasmonic effects in interdigital photodetectors

    Science.gov (United States)

    Hill, Avery M.; Nusir, Ahmad I.; Nguyen, Paul V.; Manasreh, Omar M.; Herzog, Joseph B.

    2014-09-01

    Plasmonic nanostructures have been shown to act as optical antennas that enhance optical devices. This study focuses on computational electromagnetic (CEM) analysis of GaAs photodetectors with gold interdigital electrodes. Experiments have shown that the photoresponse of the devices depend greatly on the electrode spacing and the polarization of the incident light. Smaller electrode spacing and transverse polarization give rise to a larger photoresponse. This computational study will simulate the optical properties of these devices to determine what plasmonic properties and optical enhancement these devices may have. The models will be solving Maxwell's equations with a finite element method (FEM) algorithm provided by the software COMSOL Multiphysics 4.4. The preliminary results gathered from the simulations follow the same trends that were seen in the experimental data collected, that the spectral response increases when the electrode spacing decreases. Also the simulations show that incident light with the electric field polarized transversely across the electrodes produced a larger photocurrent as compared with longitudinal polarization. This dependency is similar to other plasmonic devices. The simulation results compare well with the experimental data. This work also will model enhancement effects in nanostructure devices with dimensions that are smaller than the current samples to lead the way for future nanoscale devices. By seeing the potential effects that the decreased spacing could have, it opens the door to a new set of devices on a smaller scale, potentially ones with a higher level of enhancement for these devices. In addition, the precise modeling and understanding of the effects of the parameters provides avenues to optimize the enhancement of these structures making more efficient photodetectors. Similar structures could also potentially be used for enhanced photovoltaics as well.

  8. A flexible and miniaturized hair dye based photodetector via chemiluminescence pathway.

    Science.gov (United States)

    Lin, Ching-Chang; Sun, Da-Shiuan; Lin, Ya-Lin; Tsai, Tsung-Tso; Cheng, Chieh; Sun, Wen-Hsien; Ko, Fu-Hsiang

    2017-04-15

    A flexible and miniaturized metal semiconductor metal (MSM) biomolecular photodetector was developed as the core photocurrent system through chemiluminescence for hydrogen peroxide sensing. The flexible photocurrent sensing system was manufactured on a 30-µm-thick crystalline silicon chip by chemical etching process, which produced a flexible silicon chip. A surface texturization design on the flexible device enhanced the light-trapping effect and minimized reflectivity losses from the incident light. The model protein streptavidin bound to horseradish peroxidase (HRP) was successfully immobilized onto the sensor surface through high-affinity conjugation with biotin. The luminescence reaction occurred with luminol, hydrogen peroxide and HRP enzyme, and the emission of light from the catalytic reaction was detected by underlying flexible photodetector. The chemiluminescence in the miniaturized photocurrent sensing system was successfully used to determine the hydrogen peroxide concentration in real-time analyses. The hydrogen peroxide detection limit of the flexible MSM photodetector was 2.47mM. The performance of the flexible MSM photodetector maintained high stability under bending at various bending radii. Moreover, for concave bending, a significant improvement in detection signal intensity (14.5% enhancement compared with a flat configuration) was observed because of the increased photocurrent, which was attributed to enhancement of light trapping. Additionally, this detector was used to detect hydrogen peroxide concentrations in commercial hair dye products, which is a significant issue in the healthcare field. The development of this novel, flexible and miniaturized MSM biomolecular photodetector with excellent mechanical flexibility and high sensitivity demonstrates the applicability of this approach to future wearable sensor development efforts. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Exciton Transport in Organic Semiconductors

    Science.gov (United States)

    Menke, Stephen Matthew

    Photovoltaic cells based on organic semiconductors are attractive for their use as a renewable energy source owing to their abundant feedstock and compatibility with low-cost coating techniques on flexible substrates. In contrast to photovoltaic cells based traditional inorganic semiconductors, photon absorption in an organic semiconductor results in the formation of a coulombically bound electron-hole pair, or exciton. The transport of excitons, consequently, is of critical importance as excitons mediate the interaction between charge and light in organic photovoltaic cells (OPVs). In this dissertation, a strong connection between the fundamental photophysical parameters that control nanoscopic exciton energy transfer and the mesoscopic exciton transport is established. With this connection in place, strategies for enhancing the typically short length scale for exciton diffusion (L D) can be developed. Dilution of the organic semiconductor boron subphthalocyanine chloride (SubPc) is found to increase the LD for SubPc by 50%. In turn, OPVs based on dilute layers of SubPc exhibit a 30% enhancement in power conversion efficiency. The enhancement in power conversion efficiency is realized via enhancements in LD, optimized optical spacing, and directed exciton transport at an exciton permeable interface. The role of spin, energetic disorder, and thermal activation on L D are also addressed. Organic semiconductors that exhibit thermally activated delayed fluorescence and efficient intersystem and reverse intersystem crossing highlight the balance between singlet and triplet exciton energy transfer and diffusion. Temperature dependent measurements for LD provide insight into the inhomogeneously broadened exciton density of states and the thermal nature of exciton energy transfer. Additional topics include energy-cascade OPV architectures and broadband, spectrally tunable photodetectors based on organic semiconductors.

  10. Microcavity-integrated graphene photodetector

    OpenAIRE

    Furchi, Marco; Urich, Alexander; Pospischil, Andreas; Lilley, Govinda; Unterrainer, Karl; Detz, Hermann; Klang, Pavel; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Mueller, Thomas

    2011-01-01

    The monolithic integration of novel nanomaterials with mature and established technologies has considerably widened the scope and potential of nanophotonics. For example, the integration of single semiconductor quantum dots into photonic crystals has enabled highly efficient single-photon sources. Recently, there has also been an increasing interest in using graphene - a single atomic layer of carbon - for optoelectronic devices. However, being an inherently weak optical absorber (only 2.3 % ...

  11. High time-resolution photodetectors for PET applications

    Energy Technology Data Exchange (ETDEWEB)

    Ronzhin, Anatoly

    2016-02-11

    This paper describes recent developments aiming at the improvement of the time resolution of photodetectors used in positron emission tomography (PET). Promising photodetector candidates for future PET-time-of-flight (TOF) applications are also discussed.

  12. A [111]-Cut Si Hemisphere Two-Photon Response Photodetector

    Institute of Scientific and Technical Information of China (English)

    LIU Xiu-Huan; CHEN Zhan-Guo; JIA Gang; WANG Hai-Yan; GAO Yan-Jun; LI Yi1

    2011-01-01

    Properties of two-photon response in a [lll]-cut nearly-intrinsic Si hemisphere photodetector are studied. The measured photocurrent of the photodetector responding to the 1.32μm continuous wave laser shows a quadratic dependence on the coupled optical power and is saturated with the bias voitage. Also, the photocurrent is independent of polarization. Such properties are in good agreement with the theory of two-photon absorption. The isotropic photocurrent generated from the [lll]-cut Si hemisphere is compared to the anisotropic one induced in the [110]-cut Si sample and the ratio of Xxxxx /Xxxyy for silicon performing at 1.32μm is calculated to be 2.4 via the fitted function of the anisotropic photocurrent from the [110]-cut sample.%Properties of two-photon response in a [111]-cut nearly-intrinsic Si hemisphere photodetector are studied.The measured photocurrent of the photodetector responding to the 1.32 μm continuous wave laser shows a quadratic dependence on the coupled optical power and is saturated with the bias voltage.Also,the photocurrent is independent of polarization.Such properties are in good agreement with the theory of two-photon absorption.The isotropic photocurrent generated from the [111]-cut Si hemisphere is compared to the anisotropic one induced in the [110]-cut Si sample and the ratio of Xxxxx /Xxxyy for silicon performing at 1.32μm is calculated to be 2.4via the fitted function of the anisotropic photocurrent from the [110]-cut sample.Silicon materials have a variety of applications in microelectronics and silicon optoelectronics and are still attractive to relevant researchers.Commercial Si photodetectors are largely designed based on singlephoton absorption (SPA).However,nonlinear characteristics have been exhibited in silicon devices.Specifically,two-photon absorption (TPA) has attracted much attention in such devices of Si p-n and p-i-n photodiodes,Si waveguides and Si avalanche diodes,etc.for the autocorrelation measurements of

  13. Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

    Science.gov (United States)

    Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

    2017-02-02

    Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10(-11) watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

  14. A nano-scale alignment method for imprint lithography

    Institute of Scientific and Technical Information of China (English)

    WANG Li; LU Bing-heng; DING Yu-cheng; QIU Zhi-hui; LIU Hong-zhong

    2006-01-01

    A novel nano-scale alignment technique based generated by two pairs of quadruple gratings on mold and wafer are optically projected onto two photo-detector arrays,alignment errors in the x and y directions.The experiment sensitive to relative displacement of the mold and wafer,and the alignment accuracy obtained in the x and y directions and in θare ±20 nm,±25 nm and ±1 μrad (3σ),respectively.They can meet the requirements of alignment accuracy for submicron imprint lithography.

  15. In-line silicon Schottky photodetectors on silicon cored fibers working in 1550 nm wavelength regimes

    Science.gov (United States)

    Huang, Yen Po; Wang, Lon A.

    2015-05-01

    We demonstrate an in-line silicon Schottky Photodetector (SSPD) operating at telecom wavelengths based on internal photoemission process. Instead of using silicon waveguides obtained by conventional semiconductor process, a silicon cored fiber was used for making the SSPD. The inherent waveguide property of Si-cored fiber enabled the SSPD to be connected directly with a receiving silica fiber, eliminating the need of aerial optical coupling. The SSPD exhibited comparable photo-detection characteristics such as responsivity when compared to the conventional SSPDs in 1550 nm.

  16. Solid-state photo-detectors for both CT and PET applications

    CERN Document Server

    Moraes, Danielle; Jarron, Pierre

    2007-01-01

    New semiconductor detectors have recently gained a lot of attention for medical applications in general. Advances in CdZnTe-detector arrays might improve both energy resolution and spatial resolution of clinical X-ray systems. Alternative system designs based on TFA technology combining photo-detector arrays with CMOS electronics open a possibility for compact imaging cameras. This scenario allows for the use of alternative materials such as a-Si:H and HgI2 that can be applied alone or integrated with scintillators. Results obtained with such materials are presented.

  17. Photodetectors based on intersubband transitions using III-nitride superlattice structures

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Daniel; Baumann, Esther; Giorgetta, Fabrizio R; Theron, Ricardo [University of Neuchatel, 1 A.-L. Breguet, 2000 Neuchatel (Switzerland); Wu, Hong; Schaff, William J; Dawlaty, Jahan; George, Paul A; Eastman, Lester F; Rana, Farhan [Cornell University, Phillips Hall, Ithaca, NY 14853 (United States); Kandaswamy, Prem K; Leconte, Sylvain; Monroy, Eva [Equipe mixte CEA-CNRS Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)

    2009-04-29

    We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.

  18. Theoretical Study on Absorption of Magnetically Tunable Terahertz Quantum- Well Photodetectors

    Institute of Scientific and Technical Information of China (English)

    CHEN Yu-Ling; GUO Xu-Guang; CAO Jun-Cheng

    2006-01-01

    Because of the Zeeman splitting effect in diluted semiconductor (Zn,Cd,Mn)Se, the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells can be adjusted by magnetic field effectively. Within the effective-mass approximation, the conduction electronic structure and the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells subjected to in-plane magnetic Gelds are investigated. Our theoretical results show that it is possible to use the ZnSe/(Zn,Cd,Mn)Se quantum well as magnetically tunable terahertz photodetectors.

  19. Enhanced photoresponse in monolayer hydrogenated graphene photodetector.

    Science.gov (United States)

    Gowda, Prarthana; Mohapatra, Dipti R; Misra, Abha

    2014-10-01

    We report the photoresponse of a hydrogenated graphene (H-graphene)-based infrared (IR) photodetector that is 4 times higher than that of pristine graphene. An enhanced photoresponse in H-graphene is attributed to the longer photoinduced carrier lifetime and hence a higher internal quantum efficiency of the device. Moreover, a variation in the angle of incidence of IR radiation demonstrated a nonlinear photoresponse of the detector, which can be attributed to the photon drag effect. However, a linear dependence of the photoresponse is revealed with different incident powers for a given angle of IR incidence. This study presents H-graphene as a tunable photodetector for advanced photoelectronic devices with higher responsivity. In addition, in situ tunability of the graphene bandgap enables achieving a cost-effective technique for developing photodetectors without involving any external treatments.

  20. Optical bistability in artificial composite nanoscale molecules: Towards all optical processing at the nanoscale

    CERN Document Server

    Malyshev, A V

    2010-01-01

    Optical response of artificial composite nanoscale molecules comprising a closely spaced noble metal nanoparticle and a semiconductor quantum dot have been studied theoretically. We consider a system composed of an Au particle and CdSe or CdSe/ZnSe quantum dot and predict optical bistability and hysteresis in its response, which suggests various applications, in particular, all-optical processing and optical memory.

  1. Effects of Organic Molecules with Different Structures and Absorption Bandwidth on Modulating Photoresponse of MoS2 Photodetector.

    Science.gov (United States)

    Huang, Yanmin; Zheng, Wei; Qiu, Yunfeng; Hu, PingAn

    2016-09-01

    Organic dye molecules possessing modulated optical absorption bandwidth and molecular structures can be utilized as sensitizing species for the enhancement of photodetector performance of semiconductor via photoinduced charge transfer mechanism. MoS2 photodetector were modified by drop-casting of methyl orange (MO), rhodamine 6G (R6G), and methylene blue (MB) with different molecular structures and extinction coefficients, and enhanced photodetector performance in terms of photocurrent, photoresponsity, photodetectivity, and external quantum efficiency were obtained after modification of MO, R6G, and MB, respectively. Furthermore, dyes showed different modulating abilities for photodetector performance after combination with MoS2, mainly due to the variation of molecular structures and optical absorption bandwidth. Among tested dyes, deposition of MB onto monolayer MoS2 grown by CVD resulted in photocurrent ∼20 times as high as pristine MoS2 due to favorable photoinduced charge transfer of photoexcited electrons from flat MB molecules to the MoS2 layer. Meanwhile, the corresponding photoresponsivity, photodetectivity, and an external quantum efficiency are 9.09 A W(1-), 2.2 × 10(11) Jones, 1729% at 610 nm, respectively. Photoinduced electron-transfer measurements of the pristine MoS2 and dye-modified MoS2 indicated the n-doping effect of dye molecules on the MoS2. Additionally, surface-enhanced Raman measurements also confirmed the direct correlation with charge transfer between organic dyes and MoS2 taking into account the chemically enhanced Raman scattering mechanism. Present work provides a new clue for the manipulation of high-performance of two-dimensional layered semiconductor-based photodetector via the combination of organic dyes.

  2. Nanoscale thermal probing

    Directory of Open Access Journals (Sweden)

    Yanan Yue

    2012-03-01

    Full Text Available Nanoscale novel devices have raised the demand for nanoscale thermal characterization that is critical for evaluating the device performance and durability. Achieving nanoscale spatial resolution and high accuracy in temperature measurement is very challenging due to the limitation of measurement pathways. In this review, we discuss four methodologies currently developed in nanoscale surface imaging and temperature measurement. To overcome the restriction of the conventional methods, the scanning thermal microscopy technique is widely used. From the perspective of measuring target, the optical feature size method can be applied by using either Raman or fluorescence thermometry. The near-field optical method that measures nanoscale temperature by focusing the optical field to a nano-sized region provides a non-contact and non-destructive way for nanoscale thermal probing. Although the resistance thermometry based on nano-sized thermal sensors is possible for nanoscale thermal probing, significant effort is still needed to reduce the size of the current sensors by using advanced fabrication techniques. At the same time, the development of nanoscale imaging techniques, such as fluorescence imaging, provides a great potential solution to resolve the nanoscale thermal probing problem.

  3. Visible blind ultraviolet photodetector based on CH3NH3PbCl3 thin film.

    Science.gov (United States)

    Wang, Wenzhen; Xu, Haitao; Cai, Jiang; Zhu, Jiabin; Ni, Chaowei; Hong, Feng; Fang, Zebo; Xu, Fuzong; Cui, Siwei; Xu, Run; Wang, Linjun; Xu, Fei; Huang, Jian

    2016-04-18

    We report a prototypical device of CH3NH3PbCl3 film ultraviolet photodetectors that were fabricated with a coplanar metal-semiconductor-metal Au interdigital electrode configuration. Pure phase CH3NH3PbCl3 films with a good crystallinity were formed by a hybrid sequential deposition process featured with inter-diffusion of PbCl2 and CH3NH3Cl upon annealing. The CH3NH3PbCl3 film photodetector exhibits a high responsivity of 7.56 A /W at 360 nm, a ultraviolet/visible rejection ratio (R360 nm/R500 nm) was about two orders of magnitude and fast response speed with a rising time of 170 μs and a decay time of 220 μs. All the above results demonstrate CH3NH3PbCl3 film photodetector as a competitive candidate in the application of visible blind UV detectors.

  4. Near-infrared photodetectors based on mercury indium telluride single crystals

    Science.gov (United States)

    Zhang, Xiaolei; Sun, Weiguo; Lu, Zhengxiong; Zhang, Liang; Zhao, Lan; Ding, JiaXin; Yan, Guoqing

    2008-03-01

    Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details of oxidation process, Schottky diodes, as well as the photodetectors fabrication and characterizations are discussed.

  5. ZnO based visible-blind UV photodetector by spray pyrolysis

    Science.gov (United States)

    Inamdar, S. I.; Ganbavle, V. V.; Rajpure, K. Y.

    2014-12-01

    Zinc oxide (ZnO) metal-semiconductor-metal ultraviolet photodetectors were fabricated by economical spray pyrolysis method. The devices have been characterized to investigate the effect of precursor solution concentration on the photoconductive properties of ZnO. The structural, morphological and optical properties of the ZnO thin films were studied using different techniques. The crystal structure, size and lattice parameters have been estimated by X-ray diffraction (XRD) analysis. The UV photodetector device prepared using 0.1 M solution concentration exhibits low dark current and high UV photocurrent of about 134 μA at 5 V bias at 365 nm peak wavelength. The surface morphology and the surface roughness have been studied by AFM analysis. UV-Vis measurements have been used to study the effect of solution concentration on absorption spectra and hence on the band gap. The present device shows fast response in UV region of electromagnetic spectrum and shows almost no response to visible light. The characteristic times for rise and fall of the photocurrent device were 12 s and 9 s respectively. This devices are providing a simple and economical way to fabricate high-performance 'visible-blind' UV detectors and promising for use in large-area UV-A photodetector applications.

  6. Flexible Photodetectors Based on 1D Inorganic Nanostructures

    Science.gov (United States)

    Lou, Zheng

    2015-01-01

    Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic properties. This article offers a comprehensive review of several types of flexible photodetectors based on 1D nanostructures from the past ten years, including flexible ultraviolet, visible, and infrared photodetectors. High‐performance organic‐inorganic hybrid photodetectors, as well as devices with 1D nanowire (NW) arrays, are also reviewed. Finally, new concepts of flexible photodetectors including piezophototronic, stretchable and self‐powered photodetectors are examined to showcase the future research in this exciting field. PMID:27774404

  7. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  8. Photodetectors based on two dimensional materials

    Science.gov (United States)

    Zheng, Lou; Zhongzhu, Liang; Guozhen, Shen

    2016-09-01

    Two-dimensional (2D) materials with unique properties have received a great deal of attention in recent years. This family of materials has rapidly established themselves as intriguing building blocks for versatile nanoelectronic devices that offer promising potential for use in next generation optoelectronics, such as photodetectors. Furthermore, their optoelectronic performance can be adjusted by varying the number of layers. They have demonstrated excellent light absorption, enabling ultrafast and ultrasensitive detection of light in photodetectors, especially in their single-layer structure. Moreover, due to their atomic thickness, outstanding mechanical flexibility, and large breaking strength, these materials have been of great interest for use in flexible devices and strain engineering. Toward that end, several kinds of photodetectors based on 2D materials have been reported. Here, we present a review of the state-of-the-art in photodetectors based on graphene and other 2D materials, such as the graphene, transition metal dichalcogenides, and so on. Project supported by the National Natural Science Foundation of China (Nos. 61377033, 61574132, 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences.

  9. Semiconductor nanocrystals photosensitize C60 crystals.

    Science.gov (United States)

    Biebersdorf, Andreas; Dietmüller, Roland; Susha, Andrei S; Rogach, Andrey L; Poznyak, Sergey K; Talapin, Dmitri V; Weller, Horst; Klar, Thomas A; Feldmann, Jochen

    2006-07-01

    Semiconductor nanocrystals (SCNCs) made of CdSe, CdTe, and InP are used to photosensitize needlelike C(60) crystals. The photocurrent is increased by up to 3 orders of magnitude as compared with C(60) crystals without SCNCs. The photocurrent spectrum can be tuned precisely by the SCNC size and material, rendering the SCNC-functionalized C(60) crystals an excellent material for spectrally tuneable photodetectors. We explain the increased photocurrent as a result of photoexcited electrons transferring from the SCNCs to the C(60) crystals and causing photoconductivity, while the complementary holes remain trapped in the SCNCs.

  10. Polymer waveguide grating sensor integrated with a thin-film photodetector.

    Science.gov (United States)

    Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

    2014-01-01

    This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III-V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing.

  11. Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer.

    Science.gov (United States)

    Yao, Jiandong; Zheng, Zhaoqiang; Shao, Jianmei; Yang, Guowei

    2015-12-01

    Layered transition metal dichalcogenides (TMDs) have been proven to be essential building blocks for the high-performance optoelectronic devices as a result of their favorable bandgaps, extraordinary light absorption, and closed surface electronic structures. However, the in-depth exploration of their operating mechanism as insertion layers in heterojunction photodetectors is scarce. Here, we demonstrate that a Bi/Si heterojunction photodetector can achieve a superior performance by inserting a WS2 layer. A high photosensitivity of 1.4 × 10(8) cm(2)/W and an outstanding detectivity of 1.36 × 10(13) cm Hz(1/2) W(-1) are obtained, which are comparable or even surpass those of state-of-art commercial photodetectors. The working mechanism of the Bi/WS2/Si sandwich-structured photodetector is unveiled, including the efficient passivation of the interface, enhancement of light absorption, and selective carrier blocking. Finally, a good voltage tunability of the photoresponse is also demonstrated. These findings are significant to the deep understanding on the integration of layered TMDs with conventional semiconductors, and they provide an attractive methodology to develop layered TMDs in a multi-junction system.

  12. High-performance ultraviolet photodetectors based on solution-grown ZnS nanobelts sandwiched between graphene layers.

    Science.gov (United States)

    Kim, Yeonho; Kim, Sang Jin; Cho, Sung-Pyo; Hong, Byung Hee; Jang, Du-Jeon

    2015-07-22

    Ultraviolet (UV) light photodetectors constructed from solely inorganic semiconductors still remain unsatisfactory because of their low electrical performances. To overcome this limitation, the hybridization is one of the key approaches that have been recently adopted to enhance the photocurrent. High-performance UV photodetectors showing stable on-off switching and excellent spectral selectivity have been fabricated based on the hybrid structure of solution-grown ZnS nanobelts and CVD-grown graphene. Sandwiched structures and multilayer stacking strategies have been applied to expand effective junction between graphene and photoactive ZnS nanobelts. A multiply sandwich-structured photodetector of graphene/ZnS has shown a photocurrent of 0.115 mA under illumination of 1.2 mWcm(-2) in air at a bias of 1.0 V, which is higher 10(7) times than literature values. The multiple-sandwich structure of UV-light sensors with graphene having high conductivity, flexibility, and impermeability is suggested to be beneficial for the facile fabrication of UV photodetectors with extremely efficient performances.

  13. AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

    Science.gov (United States)

    Malinowski, P. E.; Duboz, J.-Y.; John, J.; Sturdevant, C.; Das, J.; Derluyn, J.; Germain, M.; de Moor, P.; Minoglou, K.; Semond, F.; Frayssinet, E.; Hochedez, J.-F.; Giordanengo, B.; van Hoof, C.; Mertens, R.

    2010-04-01

    We report on the fabrication and characterization of solar blind Metal-Semiconductor-Metal (MSM) based photodetectors for use in the extreme ultraviolet (EUV) wavelength range. The devices were fabricated in the AlGaN-on- Si material system, with Aluminum Gallium Nitride (AlGaN) epitaxial layers grown on Si(111) by means of Molecular Beam Epitaxy. The detectors' IV characteristics and photoresponse were measured between 200 and 400 nm. Spectral responsivity was calculated for comparison with the state-of-the-art ultraviolet photodetectors. It reaches the order of 0.1 A/W at the cut-off wavelength of 360 nm, for devices with Au fingers of 3 μm width and spacing of 3 μm. The rejection ratio of visible radiation (400 nm) was more than 3 orders of magnitude. In the additional post-processing step, the Si substrate was removed locally under the active area of the MSM photodetectors using SF6-based Reactive Ion Etching (RIE). In such scheme, the backside illumination is allowed and there is no shadowing of the active layer by the metal electrodes, which is advantageous for the EUV sensitivity. Completed devices were assembled and wire-bonded in customized TO-8 packages with an opening. The sensitivity at EUV was verified at the wavelengths of 30.4 and 58.4 nm using a He-based beamline. AlGaN photodetectors are a promising alternative for highly demanding applications such as space science or modern EUV lithography. The backside illumination approach is suited in particular for large, 2D focal plane arrays.

  14. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  15. Nanoscale plasmonic stamp lithography on silicon.

    Science.gov (United States)

    Liu, Fenglin; Luber, Erik J; Huck, Lawrence A; Olsen, Brian C; Buriak, Jillian M

    2015-02-24

    Nanoscale lithography on silicon is of interest for applications ranging from computer chip design to tissue interfacing. Block copolymer-based self-assembly, also called directed self-assembly (DSA) within the semiconductor industry, can produce a variety of complex nanopatterns on silicon, but these polymeric films typically require transformation into functional materials. Here we demonstrate how gold nanopatterns, produced via block copolymer self-assembly, can be incorporated into an optically transparent flexible PDMS stamp, termed a plasmonic stamp, and used to directly functionalize silicon surfaces on a sub-100 nm scale. We propose that the high intensity electric fields that result from the localized surface plasmons of the gold nanoparticles in the plasmonic stamps upon illumination with low intensity green light, lead to generation of electron-hole pairs in the silicon that drive spatially localized hydrosilylation. This approach demonstrates how localized surface plasmons can be used to enable functionalization of technologically relevant surfaces with nanoscale control.

  16. All-inkjet-printed flexible ZnO micro photodetector for a wearable UV monitoring device

    Science.gov (United States)

    Tran, Van-Thai; Wei, Yuefan; Yang, Hongyi; Zhan, Zhaoyao; Du, Hejun

    2017-03-01

    Fabrication of small-sized patterns of inorganic semiconductor onto flexible substrates is a major concern when manufacturing wearable devices for measuring either biometric or environmental parameters. In this study, micro-sized flexible ZnO UV photodetectors have been thoroughly prepared by a facile inkjet printing technology and followed with heat treatments. A simple ink recipe of zinc acetate precursor solution was investigated. It is found that the substrate temperature during zinc precursor ink depositing has significant effects on ZnO pattern shape, film morphology, and crystallization. The device fabricated from the additive manufacturing approach has good bendability, Ohmic contact, short response time as low as 0.3 s, and high on/off ratio of 3525. We observed the sensor’s dependence of response/decay time by the illuminating UV light intensity. The whole process is based on additive manufacturing which has many benefits such as rapid prototyping, saving material, being environmentally friendly, and being capable of creating high-resolution patterns. In addition, this method can be applied to flexible substrates, which makes the device more applicable for applications requiring flexibility such as wearable devices. The proposed all-inkjet-printing approach for a micro-sized ZnO UV photodetector would significantly simplify the fabrication process of micro-sized inorganic semiconductor-based devices. A potential application is real-time monitoring of UV light exposure to warn users about unsafe direct sunlight to implement suitable avoidance solutions.

  17. Superior Plasmonic Photodetectors Based on Au@MoS2 Core-Shell Heterostructures.

    Science.gov (United States)

    Li, Yuan; DiStefano, Jennifer G; Murthy, Akshay A; Cain, Jeffrey D; Hanson, Eve D; Li, Qianqian; Castro, Fernando C; Chen, Xinqi; Dravid, Vinayak P

    2017-09-21

    Integrating plasmonic materials into semiconductor media provides a promising approach for applications such as photo-sensing and solar energy conversion. The resulting structures introduce enhanced light-matter interactions, additional charge trap states, and efficient charge-transfer pathways for light-harvesting devices, especially when an intimate interface is built between the plasmonic nanostructure and semiconductor. Herein, we report the development of plasmonic photodetectors using Au@MoS2 heterostructures - an Au nanoparticle core that is encapsulated by a CVD-grown multilayer MoS2 shell, which perfectly realizes the intimate and direct interfacing of Au and MoS2. We explored their favorable applications in different types of photo-sensing devices. The first involves the development of a large-area interdigitated field-effect phototransistor, which shows a photoresponsivity of ~10 times higher than that of planar MoS2 transistors. The other type of device geometry is a Si-supported Au@MoS2 heterojunction gateless photodiode. We demonstrated its superior photo-response and recovery ability, with a photoresponsivity as high as 22.3 A/W, which is beyond the most distinguished values of previously reported similar gateless photodetectors. The improvement of photo-sensing performance can be a combined result of multiple factors, including enhanced light absorption, creation of more trap states, and, possibly, the formation of interfacial charge-transfer transition, benefiting from the intimate connection of Au and MoS2.

  18. Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

    Science.gov (United States)

    Zhang, Yingjie; Hellebusch, Daniel J.; Bronstein, Noah D.; Ko, Changhyun; Ogletree, D. Frank; Salmeron, Miquel; Alivisatos, A. Paul

    2016-06-01

    The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 1017 Jones, the highest reported in visible and infrared detectors at room temperature, and 4-5 orders of magnitude higher than that of commercial single-crystal silicon detectors. The material was fabricated by sintering chloride-capped CdTe nanocrystals into polycrystalline films, where Cl selectively segregates into grain boundaries acting as n-type dopants. Photogenerated electrons concentrate in and percolate along the grain boundaries--a network of energy valleys, while holes are confined in the grain interiors. This electrostatic field-assisted carrier separation and percolation mechanism enables an unprecedented photoconductive gain of 1010 e- per photon, and allows for effective control of the device response speed by active carrier quenching.

  19. Sensitive, Fast, and Stable Perovskite Photodetectors Exploiting Interface Engineering

    KAUST Repository

    Sutherland, Brandon R.

    2015-08-19

    © 2015 American Chemical Society. Organometallic halide perovskites are a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. They have seen rapid strides toward enabling efficient third-generation solar cell technologies. Here, we report the first material-tailoring of TiO2/perovskite/spiro-OMeTAD junction-based photodiodes toward applications in photodetection, a field in need of fast, sensitive, low-cost, spectrally tunable materials that offer facile integration across a broad range of substrates. We report photodetection that exhibits 1 μs temporal response, and we showcase stable operation in the detection of over 7 billion transient light pulses through a continuous pulsed-illumination period. The perovskite diode photodetector has a peak responsivity approaching 0.4 A W-1 at 600 nm wavelength, which is superior to red light detection in crystalline silicon photodiodes used in commercial image sensors. Only by developing a composite Al2O3/PCBM front contact interface layer were we able to stabilize device operation in air, reduce dark current, and enhance the responsivity in the low-bias regime to achieve an experimentally measured specific detectivity of 1012 Jones.

  20. Nanoscale characterization of surfaces and interfaces

    CERN Document Server

    DiNardo, N John

    2008-01-01

    Derived from the highly acclaimed series Materials Science and Technology, this book provides in-depth coverage of STM, AFM, and related non-contact nanoscale probes along with detailed applications, such as the manipulation of atoms and clusters on a nanometer scale. The methods are described in terms of the physics and the technology of the methods and many high-quality images demonstrate the power of these techniques in the investigation of surfaces and the processes which occur on them.Topics include:Semiconductor Surfaces and Interfaces * Insulators * Layered Compounds * Charg

  1. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  2. Plasmonic effects in metal-semiconductor nanostructures

    CERN Document Server

    Toropov, Alexey A

    2015-01-01

    Metal-semiconductor nanostructures represent an important new class of materials employed in designing advanced optoelectronic and nanophotonic devices, such as plasmonic nanolasers, plasmon-enhanced light-emitting diodes and solar cells, plasmonic emitters of single photons, and quantum devices operating in infrared and terahertz domains. The combination of surface plasmon resonances in conducting structures, providing strong concentration of an electromagnetic optical field nearby, with sharp optical resonances in semiconductors, which are highly sensitive to external electromagnetic fields, creates a platform to control light on the nanoscale. The design of the composite metal-semiconductor system imposes the consideration of both the plasmonic resonances in metal and the optical transitions in semiconductors - a key issue being their resonant interaction providing a coupling regime. In this book the reader will find descriptions of electrodynamics of conducting structures, quantum physics of semiconducto...

  3. Conductive layer for biaxially oriented semiconductor film growth

    Science.gov (United States)

    Findikoglu, Alp T.; Matias, Vladimir

    2007-10-30

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  4. Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors.

    Science.gov (United States)

    Chen, Shuo; Qiao, Xvsheng; Wang, Fengxia; Luo, Qun; Zhang, Xianghua; Wan, Xia; Xu, Yang; Fan, Xianping

    2016-01-28

    An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an "ON/OFF" ratio as high as 50 (with an incident light density of 12.05 mW cm(-2)), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.

  5. Optical Spectroscopy at the Nanoscale

    Science.gov (United States)

    Hong, Xiaoping

    Recent advances in material science and fabrication techniques enabled development of nanoscale applications and devices with superior performances and high degree of integration. Exotic physics also emerges at nanoscale where confinement of electrons and phonons leads to drastically different behavior from those in the bulk materials. It is therefore rewarding and interesting to investigate and understand material properties at the nanoscale. Optical spectroscopy, one of the most versatile techniques for studying material properties and light-matter interactions, can provide new insights into the nanomaterials. In this thesis, I explore advanced laser spectroscopic techniques to probe a variety of different nanoscale phenomena. A powerful tool in nanoscience and engineering is scanning tunneling microscopy (STM). Its capability in atomic resolution imaging and spectroscopy unveiled the mystical quantum world of atoms and molecules. However identification of molecular species under investigation is one of the limiting functionalities of the STM. To address this need, we take advantage of the molecular `fingerprints' - vibrational spectroscopy, by combining an infrared light sources with scanning tunneling microscopy. In order to map out sharp molecular resonances, an infrared continuous wave broadly tunable optical parametric oscillator was developed with mode-hop free fine tuning capabilities. We then combine this laser with STM by shooting the beam onto the STM substrate with sub-monolayer diamondoids deposition. Thermal expansion of the substrate is detected by the ultrasensitive tunneling current when infrared frequency is tuned across the molecular vibrational range. Molecular vibrational spectroscopy could be obtained by recording the thermal expansion as a function of the excitation wavelength. Another interesting field of the nanoscience is carbon nanotube, an ideal model of one dimensional physics and applications. Due to the small light absorption with

  6. Progress in Infrared Photodetectors Since 2000

    Directory of Open Access Journals (Sweden)

    Thomas E. Vandervelde

    2013-04-01

    Full Text Available The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors. In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

  7. Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48A/W at 650nm.

  8. Electrothermal simulation of superconducting nanowire avalanche photodetectors

    Science.gov (United States)

    Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K.

    2011-02-01

    We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.

  9. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  10. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  12. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  13. Semiconductor strain metrology principles and applications

    CERN Document Server

    Wong, Terence KS

    2012-01-01

    This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterization. This e-book employs a tutorial approach to explain the principles and applications of each technique specifically tailored for graduate students and postdoctoral researchers. Selected topics include optical, electron beam, ion beam and synchrotron x-ray techniques. Unlike earlier references, this e-book specifically discusses strain metrol

  14. High performance and bendable few-layered InSe photodetectors with broad spectral response.

    Science.gov (United States)

    Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U, Rajesh; Sankar, Raman; Liao, Chun-Da; Moorthy B, Karukanara; Cheng, Che-Hsuan; Chou, Fang Cheng; Chen, Yit-Tsong

    2014-05-14

    Two-dimensional crystals with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. For the first time, we demonstrate that few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET) film, are capable of conducting broadband photodetection from the visible to near-infrared region (450-785 nm) with high photoresponsivities of up to 12.3 AW(-1) at 450 nm (on SiO2/Si) and 3.9 AW(-1) at 633 nm (on PET). These photoresponsivities are superior to those of other recently reported two-dimensional (2D) crystal-based (graphene, MoS2, GaS, and GaSe) photodetectors. The InSe devices fabricated on rigid SiO2/Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO2/Si. With these excellent optoelectronic merits, we envision that the nanoscale InSe layers will not only find applications in flexible optoelectronics but also act as an active component to configure versatile 2D heterostructure devices.

  15. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    Science.gov (United States)

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  16. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  17. An excitation method for a semiconductor laser and a power supply

    Energy Technology Data Exchange (ETDEWEB)

    Kadzunari, O.; Katsu, K.

    1984-02-25

    A method is patented for stabilizing the peak pulsed output power from a semiconductor laser. This method is based on using a feedback circuit. A portion of the lasting beam is recorded by a photodetector; the output signal for this photodetector is amplified by an operational amplifier and is integrated by an RC network. The voltage obtained is compared to a reference voltage and a corresponding voltage is fed to a transistor in the power supply circuit. The pumping current of the laser is modulated by a pulse from a second transistor controlled by the pulse generator.

  18. High-performance perovskite-graphene hybrid photodetector.

    Science.gov (United States)

    Lee, Youngbin; Kwon, Jeong; Hwang, Euyheon; Ra, Chang-Ho; Yoo, Won Jong; Ahn, Jong-Hyun; Park, Jong Hyeok; Cho, Jeong Ho

    2015-01-01

    A high-performance novel photodetector is demonstrated, which consists of graphene and CH3 NH3 PbI3 perovskite layers. The resulting hybrid photodetector exhibits a dramatically enhanced photo responsivity (180 A/W) and effective quantum efficiency (5× 10(4) %) over a broad bandwidth within the UV and visible ranges.

  19. High-speed photodetectors in a photonic crystal platform

    DEFF Research Database (Denmark)

    Ottaviano, Luisa; Semenova, Elizaveta; Schubert, Martin;

    2012-01-01

    We demonstrate a fast photodetector (f3dB > 40GHz) integrated into a high-index contrast photonic crystal platform. Device design, fabrication and characterization are presented.......We demonstrate a fast photodetector (f3dB > 40GHz) integrated into a high-index contrast photonic crystal platform. Device design, fabrication and characterization are presented....

  20. Wide-Band, High-Quantum-Efficiency Photodetector

    Science.gov (United States)

    Jackson, Deborah; Wilson, Daniel; Stern, Jeffrey

    2007-01-01

    A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

  1. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  2. Semiconductor sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hartmann, Frank, E-mail: frank.hartmann@cern.c [Institut fuer Experimentelle Kernphysik, KIT, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)

    2011-02-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  3. Temperature mapping of operating nanoscale devices by scanning probe thermometry

    Science.gov (United States)

    Menges, Fabian; Mensch, Philipp; Schmid, Heinz; Riel, Heike; Stemmer, Andreas; Gotsmann, Bernd

    2016-03-01

    Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms. The development of high-resolution thermometry techniques is essential for understanding local thermal non-equilibrium processes during the operation of numerous nanoscale devices. Here we present a technique to map temperature fields using a scanning thermal microscope. Our method permits the elimination of tip-sample contact-related artefacts, a major hurdle that so far has limited the use of scanning probe microscopy for nanoscale thermometry. We map local Peltier effects at the metal-semiconductor contacts to an indium arsenide nanowire and self-heating of a metal interconnect with 7 mK and sub-10 nm spatial temperature resolution.

  4. Plasmonic nanostructure enhanced graphene-based photodetectors

    Directory of Open Access Journals (Sweden)

    T. J. Echtermeyer

    2011-09-01

    Full Text Available Graphene exhibits electrical and optical properties promising for future applications in ultra-fast photonics[1]. High carrier mobility and Fermi velocity[2,3] combined with its constant absorption over the visible wavelength range to the near-infrared[4] potentially allow its application for photodetection over a broad wavelength spectrum, operating at high frequencies. However, absorption being 2.3% per monolayer[4], responsivity of these devices is rather low[5,6]. Here we show that by combining graphene-based photodetectors with metal-nanostructures, plasmonic effects lead to an increased responsivity.

  5. Polarization-selective resonant photonic crystal photodetector

    Science.gov (United States)

    Yang, Jin-Kyu; Seo, Min-Kyo; Hwang, In-Kag; Kim, Sung-Bock; Lee, Yong-Hee

    2008-11-01

    Resonance-assisted photonic crystal (PhC) slab photodetectors are demonstrated by utilizing six 7-nm-thick InGaAsP quantum wells. In order to encourage efficient photon coupling into the slab from the vertical direction, a coupled-dipole-cavity-array PhC structure is employed. Inheriting the characteristics of the dipole mode, this resonant detector is highly polarization selective and shows a 22-nm-wide spectral width. The maximum responsivity of 0.28A/W, which is >20 times larger than that of the identical detector without the pattern, is observed near 1.56μm.

  6. Photonic crystal slab quantum well infrared photodetector

    Science.gov (United States)

    Kalchmair, S.; Detz, H.; Cole, G. D.; Andrews, A. M.; Klang, P.; Nobile, M.; Gansch, R.; Ostermaier, C.; Schrenk, W.; Strasser, G.

    2011-01-01

    In this letter we present a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS). With the PCS it is possible to enhance the absorption efficiency by increasing photon lifetime in the detector active region. To understand the optical properties of the device we simulate the PCS photonic band structure, which differs significantly from a real two-dimensional photonic crystal. By fabricating a PCS-QWIP with 100x less quantum well doping, compared to a standard QWIP, we are able to see strong absorption enhancement and sharp resonance peaks up to temperatures of 170 K.

  7. MCP-based Photodetectors for Cryogenic Applications

    CERN Document Server

    Dharmapalan, Ranjan; Byrum, Karen; Demarteau, Marcel; Elam, Jeffrey; May, Edward; Wagner, Robert; Walters, Dean; Xia, Lei; Xie, Junqi; Zhao, Huyue; Wang, J

    2016-01-01

    The Argonne MCP-based photo detector is an offshoot of the Large Area Pico-second Photo Detector (LAPPD) project, wherein 6 cm x 6 cm sized detectors are made at Argonne National Laboratory. We have successfully built and tested our first detectors for pico-second timing and few mm spatial resolution. We discuss our efforts to customize these detectors to operate in a cryogenic environment. Initial plans aim to operate in liquid argon. We are also exploring ways to mitigate wave length shifting requirements and also developing bare-MCP photodetectors to operate in a gaseous cryogenic environment.

  8. Single-pixel camera with one graphene photodetector.

    Science.gov (United States)

    Li, Gongxin; Wang, Wenxue; Wang, Yuechao; Yang, Wenguang; Liu, Lianqing

    2016-01-11

    Consumer cameras in the megapixel range are ubiquitous, but the improvement of them is hindered by the poor performance and high cost of traditional photodetectors. Graphene, a two-dimensional micro-/nano-material, recently has exhibited exceptional properties as a sensing element in a photodetector over traditional materials. However, it is difficult to fabricate a large-scale array of graphene photodetectors to replace the traditional photodetector array. To take full advantage of the unique characteristics of the graphene photodetector, in this study we integrated a graphene photodetector in a single-pixel camera based on compressive sensing. To begin with, we introduced a method called laser scribing for fabrication the graphene. It produces the graphene components in arbitrary patterns more quickly without photoresist contamination as do traditional methods. Next, we proposed a system for calibrating the optoelectrical properties of micro/nano photodetectors based on a digital micromirror device (DMD), which changes the light intensity by controlling the number of individual micromirrors positioned at + 12°. The calibration sensitivity is driven by the sum of all micromirrors of the DMD and can be as high as 10(-5)A/W. Finally, the single-pixel camera integrated with one graphene photodetector was used to recover a static image to demonstrate the feasibility of the single-pixel imaging system with the graphene photodetector. A high-resolution image can be recovered with the camera at a sampling rate much less than Nyquist rate. The study was the first demonstration for ever record of a macroscopic camera with a graphene photodetector. The camera has the potential for high-speed and high-resolution imaging at much less cost than traditional megapixel cameras.

  9. Discrete scintillator coupled mercuric iodide photodetector arrays for breast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Tornai, M.P.; Levin, C.S.; Hoffman, E.J. [UCLA School of Medicine, Los Angeles, CA (United States)

    1996-12-31

    Multi-element (4x4) imaging arrays with high resolution collimators, size matched to discrete CsI(Tl) scintillator arrays and mercuric iodide photodetector arrays (HgI{sub 2} PDA) are under development as prototypes for larger 16 x 16 element arrays. The compact nature of the arrays allows detector positioning in proximity to the breast to eliminate activity not in the line-of-sight of the collimator, thus reducing image background. Short collimators, size matched to {le}1.5 x 1.5 mm{sup 2} scintillators show a factor of 2 and 3.4 improvement in spatial resolution and efficiency, respectively, compared to high resolution collimated gamma cameras for the anticipated compressed breast geometries. Monte Carlo simulations, confirmed by measurements, demonstrated that scintillator length played a greater role in efficiency and photofraction for 140 keV gammas than cross sectional area, which affects intrinsic spatial resolution. Simulations also demonstrated that an increase in the ratio of scintillator area to length corresponds to an improvement in light collection. Electronic noise was below 40 e{sup -} RMS indicating that detector resolution was not noise limited. The high quantum efficiency and spectral match of prototype unity gain HgI{sub 2} PDAs coupled to 1 x 1 x 2.5 mm{sup 3} and 2 x 2 x 4 mm{sup 3} CsI(Tl) scintillators demonstrated energy resolutions of 9.4% and 8.8% FWHM at 140 keV, respectively, without the spectral tailing observed in standard high-Z, compound semi-conductor detectors. Line spread function measurements matched the scintillator size and pitch, and small, complex phantoms were easily imaged.

  10. Cellular nanoscale sensory wave computing

    CERN Document Server

    Baatar, Chagaan; Roska, Tamas

    2010-01-01

    This fresh perspective of sensory computing successfully bridges the gap between nanoscale devices and CMOS integrated circuits. Practical and complex algorithms are also discussed, in addition to new developments like the nanoscale antenna.

  11. Self-organizing nanochannel networks in periodically perforated semiconductor films

    NARCIS (Netherlands)

    Annabattula, R. K.; Onck, P. R.

    2011-01-01

    In this paper we theoretically analyze the mechanism of nanochannel formation by an evolutionary etching process in periodically perforated semiconductor films. The compressive stresses due to lattice mismatch of the epitaxially grown nanoscale films are gradually relaxed; leading to an evolutionary

  12. Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.

    Science.gov (United States)

    Shin, Hyun Wook; Lee, Sang Jun; Kim, Doo Gun; Bae, Myung-Ho; Heo, Jaeyeong; Choi, Kyoung Jin; Choi, Won Jun; Choe, Jeong-woo; Shin, Jae Cheol

    2015-06-02

    One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

  13. Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

    Science.gov (United States)

    Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

    2016-09-01

    A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm(-2) ), the device has a photoresponsivity of 1.52 A W(-1) , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10(4) when the power density reaches ≈2.5 mW cm(-2) . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated.

  14. Bunch Current Measurement Using a High-Speed Photodetector at HLS II

    Science.gov (United States)

    Zhou, Tianyu; Yang, Yongliang; Sun, Baogen; Lu, Ping; Wu, Fangfang; Wang, Jigang; Zhou, Zeran; Luo, Qing; Wang, Qian; Li, Hao

    2017-07-01

    This paper presents a novel bunch current measurement system based on an ultrafast photodetector and a high-speed digitizer at Hefei light source II (HLS II). We use a metal-semiconductor-metal photodetector to measure the emitted optical synchrotron radiation intensity directly, representing the bunch current intensity. To achieve bunch-by-bunch resolution, the sampling rate of the system is nearly 225 GS/s, which is achieved via a dedicated equivalent sampling algorithm. The detailed description of the experimental setup and the equivalent sampling algorithm are presented. According to preliminary tests of the daily operation mode and single-bunch mode, the measured root-mean-square of the beam current is 1%, which shows that the new system satisfies the requirements for high-precision bunch current measurements. In addition, experimental results of the “HLS” Morse-code fill pattern mode demonstrate that this system could also be a convenient and robust tool for beam top-up modes in the future.

  15. High performance photodetectors based on high quality InP nanowires

    Science.gov (United States)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  16. Plasmonic hollow gold nanoparticles induced high-performance Bi2S3 nanoribbon photodetector

    Science.gov (United States)

    Liang, Feng-Xia; Ge, Cai-Wang; Zhang, Teng-Fei; Xie, Wei-Jie; Zhang, Deng-Yue; Zou, Yi-Feng; Zheng, Kun; Luo, Lin-Bao

    2017-03-01

    A high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi2S3 nanoribbon (NR) photodetector was fabricated for green light detection (560 nm). The single crystal 1-D Bi2S3 NRs with growth orientation along [001] were synthesized by a simple solvothermal approach. Optoelectronic analysis reveals that the performance of the plasmonic photodetector was greatly enhanced after decoration with HGNs. For example, the responsivity increases from 1.4 × 102 to 1.09 × 103 AW-1, the conductivity gain from 2.68 × 102 to 2.31 × 103, and the detectivity from 2.45 × 1012 to 2.78 × 1013, respectively. Such performance enhancement was attributed to the localized surface plasmon resonance (LSPR) effect caused by the HGNs according to both experiment and theoretical simulation. This study is believed to open up new opportunities for managing light and enhancing the device performance of other 1-D semiconductor nanostructures based optoelectronic devices and systems.

  17. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    CERN Document Server

    Shiue, Ren-Jye; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dimitri; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-01-01

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photorespo...

  18. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Science.gov (United States)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  19. A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

    Science.gov (United States)

    Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.

    2016-09-01

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  20. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu [Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA (Puerto Rico); Aldalbahi, A. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2016-08-15

    High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  1. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Directory of Open Access Journals (Sweden)

    R. Velazquez

    2016-08-01

    Full Text Available High-quality single crystalline Gallium Nitride (GaN semiconductor has been synthesized using molecule beam epitaxy (MBE technique for development of high-performance deep ultraviolet (UV photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM. Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  2. Templated Chemically Deposited Semiconductor Optical Fiber Materials

    Science.gov (United States)

    Sparks, Justin R.; Sazio, Pier J. A.; Gopalan, Venkatraman; Badding, John V.

    2013-07-01

    Chemical deposition is a powerful technology for fabrication of planar microelectronics. Optical fibers are the dominant platform for telecommunications, and devices such as fiber lasers are forming the basis for new industries. High-pressure chemical vapor deposition (HPCVD) allows for conformal layers and void-free wires of precisely doped crystalline unary and compound semiconductors inside the micro-to-nanoscale-diameter pores of microstructured optical fibers (MOFs). Drawing the fibers to serve as templates into which these semiconductor structures can be fabricated allows for geometric design flexibility that is difficult to achieve with planar fabrication. Seamless coupling of semiconductor optoelectronic and photonic devices with existing fiber infrastructure thus becomes possible, facilitating all-fiber technological approaches. The deposition techniques also allow for a wider range of semiconductor materials compositions to be exploited than is possible by means of preform drawing. Gigahertz bandwidth junction-based fiber devices can be fabricated from doped crystalline semiconductors, for example. Deposition of amorphous hydrogenated silicon, which cannot be drawn, allows for the exploitation of strong nonlinear optical function in fibers. Finally, crystalline compound semiconductor fiber cores hold promise for high-power infrared light-guiding fiber devices and subwavelength-resolution, large-area infrared imaging.

  3. Sensitivity of resonant tunneling diode photodetectors

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I = 5.82 × 103 A W-1 to 3.2 A W-1. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

  4. Large-aperture hybrid photo-detector

    Energy Technology Data Exchange (ETDEWEB)

    Kawai, Y. [Institute for Particle and Nuclear Studies, The Graduate University for Advanced Studies, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Shimokanzo, Iwata City 438-0193, Shizuoka (Japan)], E-mail: kawaiy@post.kek.jp; Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tanaka, M. [Institute for Particle and Nuclear Studies, High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Shiozawa, M. [Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida City, Gifu 506-1205 (Japan); Kyushima, H.; Suyama, M. [Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Shimokanzo, Iwata City 438-0193, Shizuoka (Japan)

    2007-08-21

    We have developed the first complete large-aperture (13-inch diameter) hybrid photo-detector (HPD). The withstanding voltage problem has been overcome and we were able to attain an HPD operating voltage of +20 kV. Adoption of our newly developed backside illumination avalanche diode (AD) was also critical in successfully countering the additional problem of an increase in AD leakage after the activation process. We observed single photon signal timing jitter of under 450 ps in FWHM, electron transit time of {approx}12 ns, and clear pulse height separation up to several photoelectron peaks, all greatly superior to the performance of any conventional large-aperture photomultiplier tubes (PMTs). In addition, our HPD has a much simpler structure than conventional large-aperture PMTs, which simplifies mass production and lowers manufacturing cost. We believe that these attributes position our HPD as the most suitable photo-detector for the next generation mega-ton class water-Cherenkov detector, which is expected to be more than 20x larger than the Super-Kamiokande (SK) detector.

  5. Semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Ito, K.; Shyuue, M.

    1982-09-25

    A distributed feedback semiconductor laser is proposed which generates several beams with equal wavelengths in different directions. For this purpose, 1 millimeter grooves are cut into the surface of an n-type conductance GaAs plate in three different directions; these grooves form a diffraction grating. The center of this plate has no grooves and is bombarded by an He/Ne laser beam. The diffraction gratings provide resonance properties and generate laser beams with wavelengths of 8850, 9000 and 9200 angstroms.

  6. NANOSCALE PROCESS ENGINEERING

    Institute of Scientific and Technical Information of China (English)

    Qixiang Wang; Fei Wei

    2003-01-01

    The research of nanoscale process engineering (NPE) is based on the interdisciplinary nature of nanoscale science and technology. It mainly deals with transformation of materials and energy into nanostructured materials and nanodevices, and synergizes the multidisciplinary convergence between materials science and technology, biotechnology, and information technology. The core technologies of NPE concern all aspects of nanodevice construction and operation, such as manufacture of nanomaterials "by design", concepts and design of nanoarchitectures, and manufacture and control of customizable nanodevices. Two main targets of NPE at present are focused on nanoscale manufacture and concept design of nanodevices. The research progress of nanoscale manufacturing processes focused on creating nanostructures and assembling them into nanosystems and larger scale architectures has built the interdiscipline of NPE. The concepts and design of smart, multi-functional, environmentally compatible and customizable nanodevice prototypes built from the nanostructured systems of nanocrystalline, nanoporous and microemulsion systems are most challenging tasks of NPE. The development of NPE may also impel us to consider the curriculum and educational reform of chemical engineering in universities.

  7. Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates

    Institute of Scientific and Technical Information of China (English)

    Su Shichen; Yang Xiaodong; Hu Candong

    2011-01-01

    ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si ( 111 ) substrates.The nanostructures have preferred orientation along the c axis.The nanostructures are about 10 to 20 nm thick and about 50 nm tall.The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum,and no decrease from 250 to 360 nm.With the applied bias below 5 V,the dark current was below 6μA,and the peak responsivity of 15 A/W was achieved at 360 nm.The UV (360 nm) to visible (450 nm) rejection ratio of around two orders could be extracted from the spectra response.

  8. Photodetectors based on graphene, other two-dimensional materials and hybrid systems.

    Science.gov (United States)

    Koppens, F H L; Mueller, T; Avouris, Ph; Ferrari, A C; Vitiello, M S; Polini, M

    2014-10-01

    Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications, with a strong focus on various photodetection platforms. The versatility of these material systems enables their application in areas including ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges. These detectors can be integrated with other photonic components based on the same material, as well as with silicon photonic and electronic technologies. Here, we provide an overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of different two-dimensional crystals or of two-dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides.

  9. High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.

    Science.gov (United States)

    De Fazio, Domenico; Goykhman, Ilya; Yoon, Duhee; Bruna, Matteo; Eiden, Anna; Milana, Silvia; Sassi, Ugo; Barbone, Matteo; Dumcenco, Dumitru; Marinov, Kolyo; Kis, Andras; Ferrari, Andrea C

    2016-09-27

    We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 × 10(5). The photocurrent is in the 0.1-100 μA range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.

  10. High responsivity near-infrared photodetectors in evaporated Ge-on-Si

    Science.gov (United States)

    Sorianello, V.; De Iacovo, A.; Colace, L.; Fabbri, A.; Tortora, L.; Buffagni, E.; Assanto, G.

    2012-08-01

    Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 μm responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics.

  11. Micro- and nano-scale optoelectronic devices using vanadium dioxide

    Science.gov (United States)

    Joushaghani, Arash

    Miniaturization has the potential to reduce the size, cost, and power requirements of active optical devices. However, implementing (sub)wavelength-scale electro-optic switches with high efficiency, low insertion loss, and high extinction ratios remains challenging due to their small active volumes. Here, we use the insulator-metal phase transition of vanadium dioxide (VO2), which exhibits a large and reversible change in the refractive index across the phase transition to demonstrate compact, broadband, and efficient switches and photodetectors with record-setting characteristics. We begin by analyzing the electrical and optical properties of VO2 thin films across the phase transition and discuss the fabrication processes that yield micron- and nano-scale VO2 devices. We then demonstrate a surface plasmon thermo-optic switch, which achieves an extinction ratio of 10 dB in a 5 um long device, a record for plasmonic devices. The switch operates over a 100 nm optical bandwidth, and exhibits a thermally limited switching time of 40 mus. We investigate the current and voltage induced switching of VO2 in nano-gap junctions and show optical switching times as short as 20 ns. The two terminal VO2 junctions are incorporated in a silicon photonics platform to yield silicon-VO2 hybrid waveguide devices with a record extinction ratio of 12 dB in a 1 mum long device. In photodetector mode, the devices exhibit a nonlinear responsivity greater than 12 A/W for optical powers less than 1 muW. This device is the smallest electrically controlled and integrated switch and photodetector capable of achieving extinction ratios > 10 dB/mum. We finally investigate the ultra-fast thermal heating in gold nano-apertures and demonstrate that electron heating can change the gold lattice temperature by 300 K in tens of picoseconds. These nano-apertures can be hybridized with VO2 to demonstrate high extinction and ultrafast optical switches.

  12. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  13. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  14. Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

    DEFF Research Database (Denmark)

    Hashemi, Mahdieh; Farzad, Mahmood Hosseini; Mortensen, N. Asger;

    2013-01-01

    Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy...... is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave...... a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors....

  15. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  16. Synthesis of ALD zinc oxide and thin film materials optimization for UV photodetector applications

    Science.gov (United States)

    Tapily, Kandabara Nouhoum

    Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an n-type material with numerous intrinsic defect levels responsible for the electrical and optical behaviors. Presently, there is no clear consensus about the origin of those defects. In this work, ZnO was synthesized by atomic layer deposition (ALD). ALD is a novel deposition technique suitable for nanotechnology engineering that provides unique features such as precise control of ZnO thin film with atomic resolution, high uniformity, good conformity and high aspect ratio. Using this novel deposition technique, the ALD ZnO deposition process was developed and optimized using diethyl zinc as the precursor for zinc and water vapor as the oxygen source. In order to optimize the film quality for use in electronic applications, the physical, mechanical and electrical properties were investigated. The structural and mechanical properties of the ALD ZnO thin films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic Ellipsometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV-VIS absorption and nanoindentation. The electrical characterizations were performed using C-V, I-V, DLTS, Hall Effect, and four-point probe. The intrinsic defects responsible

  17. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.

    Science.gov (United States)

    Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei

    2016-10-12

    One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10(12) Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼10(10) Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.

  18. Enhanced Graphene Photodetector with Fractal Metasurface

    DEFF Research Database (Denmark)

    Fang, Jieran; Wang, Di; DeVault, Clayton T

    2017-01-01

    Graphene has been demonstrated to be a promising photodetection material because of its ultrabroadband optical absorption, compatibility with CMOS technology, and dynamic tunability in optical and electrical properties. However, being a single atomic layer thick, graphene has intrinsically small...... optical absorption, which hinders its incorporation with modern photodetecting systems. In this work, we propose a gold snowflake-like fractal metasurface design to realize broadband and polarization-insensitive plasmonic enhancement in graphene photodetector. We experimentally obtain an enhanced...... photovoltage from the fractal metasurface that is an order of magnitude greater than that generated at a plain gold-graphene edge and such an enhancement in the photovoltage sustains over the entire visible spectrum. We also observed a relatively constant photoresponse with respect to polarization angles...

  19. Timing Characteristics of Large Area Picosecond Photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Adams, Bernhard W.; Elagin, Andrey L.; Frisch, H.; Obaid, Razib; Oberla, E; Vostrikov, Alexander; Wagner, Robert G.; Wang, Jingbo; Wetstein, Matthew J.; Northrop, R

    2015-09-21

    The LAPPD Collaboration was formed to develop ultralast large-area imaging photodetectors based on new methods for fabricating microchannel plates (MCPs). In this paper we characterize the time response using a pulsed, sub picosecond laser. We observe single photoelectron time resolutions of a 20 cm x 20 cm MCP consistently below 70 ps, spatial resolutions of roughly 500 pm, and median gains higher than 10(7). The RMS measured at one particular point on an LAPPD detector is 58 ps, with in of 47 ps. The differential time resolution between the signal reaching the two ends of the delay line anode is measured to be 5.1 ps for large signals, with an asymptotic limit falling below 2 ps as noise-over-signal approaches zero.

  20. Negative differential resistance in three terminal photodetectors

    Science.gov (United States)

    Mikhelashvili, V.; Meyler, B.; Yofis, S.; Padmanabhan, R.; Eisenstein, G.

    2016-06-01

    A three terminal (transistor-like) photodetector fabricated on a silicon-on-insulator substrate with a high responsivity over a wide spectral range from ultraviolet to the near infrared is described. Even for low gate and drain voltages of -0.15 V and +1 V, respectively, its responsivity is 0.5 A/W at 315 nm, 0.63 A/W at 455 nm, and 0.26 A/W at 880 nm. Moreover, the device exhibits a negative differential resistance (due to Pt nano particles which are embedded within the gate dielectric) with large peak-to-valley current ratios of 60 in the dark and up to 140 under illumination. These values are several times larger than those obtained in alternative two or three terminal systems which are based on heterostructures or structures with extremely high doping regions that cause band-banding or resonant tunneling.

  1. Molecular Simulations of Nanoscale Transformations in Ionic Semiconductor Nanocrystals

    OpenAIRE

    Fan, Z

    2016-01-01

    The aim of the study described in this thesis is to obtain a profound understanding of transformations in NCs at the atomic level, by performing molecular simulations for such transformations, and by comparing the simulation results with available experimental high resolution transmission electron microscopy (HRTEM) data to validate the simulations and to reveal underlying physical mechanisms. These transformations include structural and morphological transitions and cation exchange processes...

  2. Molecular Simulations of Nanoscale Transformations in Ionic Semiconductor Nanocrystals

    NARCIS (Netherlands)

    Fan, Z.

    2016-01-01

    The aim of the study described in this thesis is to obtain a profound understanding of transformations in NCs at the atomic level, by performing molecular simulations for such transformations, and by comparing the simulation results with available experimental high resolution transmission electron m

  3. Nanoscale Characterization with Laser Picosecond Acoustics

    Science.gov (United States)

    Wright, Oliver B.

    2007-11-01

    Nanophotonics—the manipulation of light with nanomaterials—is a booming subject, its success owing to the host of nanoscale fabrication techniques now at our disposal. However, for the characterization of such nanomaterials it is expedient to turn to other types of waves with a wavelength commensurate with the nanostructure in question. One such choice is acoustic waves of nanometre wavelength. The aim of this article is to provide an introduction to laser picosecond acoustics, a means by which gigahertz-terahertz ultrasonic waves can be generated and detected by ultrashort light pulses. This method can therefore be used to characterize materials with nanometre spatial resolution. In this article we review the theoretical background for opaque single-layer thin film isotropic samples with reference to key experiments. Solids including metals and semiconductors are discussed, although liquids and, conceivably, gases, are not excluded.

  4. Surface nanoscale axial photonics

    CERN Document Server

    Sumetsky, M

    2011-01-01

    Dense photonic integration promises to revolutionize optical computing and communications. However, efforts towards this goal face unacceptable attenuation of light caused by surface roughness in microscopic devices. Here we address this problem by introducing Surface Nanoscale Axial Photonics (SNAP). The SNAP platform is based on whispering gallery modes circulating around the optical fiber surface and undergoing slow axial propagation readily described by the one-dimensional Schr\\"odinger equation. These modes can be steered with dramatically small nanoscale variation of the fiber radius, which is quite simple to introduce in practice. The extremely low loss of SNAP devices is achieved due to the fantastically low surface roughness inherent in a drawn fiber surface. In excellent agreement with the developed theory, we experimentally demonstrate localization of light in quantum wells, halting light by a point source, tunneling through potential barriers, dark states, etc. This demonstration, prototyping basi...

  5. Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Beechem, III, Thomas Edwin; Howell, Stephen W.; Peters, David W.; Davids, Paul; Ohta, Taisuke

    2016-03-22

    The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales.

  6. Direct Observation of High Photoresponsivity in Pure Graphene Photodetectors

    Science.gov (United States)

    Liu, Yanping; Xia, Qinglin; He, Jun; Liu, Zongwen

    2017-02-01

    Ultrafast and broad spectral bandwidth photodetectors are desirable attributable to their unique bandstructures. Photodetectors based on graphene have great potential due to graphene's outstanding optical and electrical properties. However, the highest reported values of the photoresponsivity of pure graphene are less than 10 mA/W at room temperature, which significantly limits its potential applications. Here, we report a photoresponsivity of 32 A/W in pure monolayer graphene photodetectors, an improvement of over one order of magnitude for functional graphene nanostructures (devices can be attributed to the high sensitivity of graphene's resistivity to a local change of the electric field induced by photo-excited carriers generated in the light-doping substrate. This dramatically increases the feasibility of using graphene for the next generation of photodetectors.

  7. High performance universal analog and counting photodetector for LIDAR applications

    Science.gov (United States)

    Linga, Krishna; Krutov, Joseph; Godik, Edward; Seemungal, Wayne; Shushakov, Dmitry; Shubin, V. E.

    2005-08-01

    We demonstrate the feasibility of applying the emerging technology of internal discrete amplification to create an efficient, ultra low noise, universal analog and counting photodetector for LIDAR remote sensing. Photodetectors with internal discrete amplification can operate in the linear detection mode with a gain-bandwidth product of up to 1015 and in the photon counting mode with count rates of up to 109 counts/sec. Detectors based on this mechanism could have performance parameters superior to those of conventional avalanche photodiodes and photomultiplier tubes. For silicon photodetector prototypes, measured excess noise factor is as low as 1.02 at gains greater than 100,000. This gives the photodetectors and, consequently, the LIDAR systems new capabilities that could lead to important advances in LIDAR remote sensing.

  8. Near-infrared photodetector with reduced dark current

    Science.gov (United States)

    Klem, John F; Kim, Jin K

    2012-10-30

    A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

  9. Nanoscale Organic Hybrid Electrolytes

    KAUST Repository

    Nugent, Jennifer L.

    2010-08-20

    Nanoscale organic hybrid electrolytes are composed of organic-inorganic hybrid nanostructures, each with a metal oxide or metallic nanoparticle core densely grafted with an ion-conducting polyethylene glycol corona - doped with lithium salt. These materials form novel solvent-free hybrid electrolytes that are particle-rich, soft glasses at room temperature; yet manifest high ionic conductivity and good electrochemical stability above 5V. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Electroanalysis at the nanoscale.

    Science.gov (United States)

    Dawson, Karen; O'Riordan, Alan

    2014-01-01

    This article reviews the state of the art of silicon chip-based nanoelectrochemical devices for sensing applications. We first describe analyte mass transport to nanoscale electrodes and emphasize understanding the importance of mass transport for the design of nanoelectrode arrays. We then describe bottom-up and top-down approaches to nanoelectrode fabrication and integration at silicon substrates. Finally, we explore recent examples of on-chip nanoelectrodes employed as sensors and diagnostics, finishing with a brief look at future applications.

  11. Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

    Science.gov (United States)

    Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David

    2007-01-01

    Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as

  12. Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

    Directory of Open Access Journals (Sweden)

    V.N. Murashev

    2015-03-01

    Full Text Available In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS in pixels photodetector arrays is discussed. Variants of new technical solutions based on photo-detectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated.

  13. Characteristics and developments of quantum-dot infrared photodetectors

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guan-jie; SHU Yong-chun; YAO Jiang-hong; SHU Qiang; DENG Hao-liang; JIA Guo-zhi; WANG Zhan-guo

    2006-01-01

    Quantum dots infrared photodetectors (QDIPs)theoretically have several advantages compared with quantum wells infrared photodetectors (QWlPs).In this paper,we discuss the theoretical advantages of QDIPs including the normal incidence response,lower dark current,higher responsivity and detectivity,etc.Recent device fabrication and experiment results in this field are also presented.Based on the analysis of existing problems,some approaches that would improve the capability of the device are pointed out.

  14. Afterpulsing in Silicon Photomultipliers: Impact on the Photodetectors Characterization

    CERN Document Server

    Para, Adam

    2015-01-01

    Novel generation of silicon-based photodetectors are attractive alternatives to the traditional phototubes. They offer significant advantages but they present new challenges too. Presence of afterpulses may affect many characteristics of the photodetectors. Simple statistical model of afterpulsing is used to evaluate the contribution to the observed dark count rates, to examine the contribution to the pulse height resolution and to demonstrate the modification of the observed timing properties of the SiPMs.

  15. Analytical challenges of determining composition and structure in small volumes with applications to semiconductor technology, nanostructures and solid state science

    Science.gov (United States)

    Ma, Zhiyong; Kuhn, Markus; Johnson, David C.

    2017-03-01

    Determining the structure and composition of small volumes is vital to the ability to understand and control nanoscale properties and critical for advancing both fundamental science and applications, such as semiconductor device manufacturing. While metrology of nanoscale materials (nanoparticles, nanocomposites) and nanoscale semiconductor structures is challenging, both basic research and cutting edge technology benefit from new and enhanced analytical techniques. This focus issue contains articles describing approaches to overcome the challenges in obtaining statistically significant atomic-scale quantification of structure and composition in a variety of materials and devices using electron microscopy and atom probe tomography.

  16. A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

    Science.gov (United States)

    Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

    2014-02-10

    We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

  17. Semiconductor laser. Halbleiterlaser

    Energy Technology Data Exchange (ETDEWEB)

    Wuenstel, K.; Gohla, B.; Tegude, F.; Luz, G.; Hildebrand, O.

    1987-08-27

    A highly modulable semiconductor laser and a process for its manufacture are described. The semiconductor laser has a substrate, a stack of semiconductor layers and electrical contacts. To reduce the capacity, the width of the stack of semiconductor layers is reduced at the sides by anisotropic etching. The electrical contacts are situated on the same side of the substrate and are applied in the same stage of the process. The semiconductor laser is suitable for monolithic integration in other components.

  18. Engineering Nanoscale Biological Molecular Motors

    OpenAIRE

    Korosec, Chapin; Forde, Nancy R.

    2017-01-01

    Understanding the operation of biological molecular motors, nanoscale machines that transduce electrochemical energy into mechanical work, is enhanced by bottom-up strategies to synthesize novel motors.

  19. Complex Phenomena in Nanoscale Systems

    CERN Document Server

    Casati, Giulio

    2009-01-01

    Nanoscale physics has become one of the rapidly developing areas of contemporary physics because of its direct relevance to newly emerging area, nanotechnologies. Nanoscale devices and quantum functional materials are usually constructed based on the results of fundamental studies on nanoscale physics. Therefore studying physical phenomena in nanosized systems is of importance for progressive development of nanotechnologies. In this context study of complex phenomena in such systems and using them for controlling purposes is of great practical importance. Namely, such studies are brought together in this book, which contains 27 papers on various aspects of nanoscale physics and nonlinear dynamics.

  20. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  1. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    Energy Technology Data Exchange (ETDEWEB)

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  2. Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Eden, J G [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Park, S-J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Ostrom, N P [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); McCain, S T [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Wagner, C J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Vojak, B A [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Chen, J [Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Liu, C [Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Allmen, P von [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Zenhausern, F [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Sadler, D J [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Jensen, C [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Wilcox, D L [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Ewing, J J [Ewing Technology Associates, 5416 143rd Avenue, SE, Bellevue, WA 98006 (United States)

    2003-12-07

    Recent advances in the development of microplasma devices fabricated in a variety of materials systems (Si, ceramic multilayers, and metal/polymer structures) and configurations are reviewed. Arrays of microplasma emitters, having inverted pyramidal Si electrodes or produced in ceramic multilayer sandwiches with integrated ballasting for each pixel, have been demonstrated and arrays as large as 30 x 30 pixels are described. A new class of photodetectors, hybrid semiconductor/microplasma devices, is shown to exhibit photoresponsivities in the visible and near-infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes. Microdischarge devices having refractory or piezoelectric dielectric films such as Al{sub 2}O{sub 3} or BN have extended lifetimes ({approx}86% of initial radiant output after 100 h with an Al{sub 2}O{sub 3} dielectric) and controllable electrical characteristics. A segmented, linear array of microdischarges, fabricated in a ceramic multilayer structure and having an active length of {approx}1 cm and a clear aperture of 80 x 360 {mu}m{sup 2}, exhibits evidence of gain on the 460.3 nm transition of Xe{sup +}, making it the first example of a microdischarge-driven optical amplifier.

  3. Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

    Science.gov (United States)

    Eden, J. G.; Park, S.-J.; Ostrom, N. P.; McCain, S. T.; Wagner, C. J.; Vojak, B. A.; Chen, J.; Liu, C.; von Allmen, P.; Zenhausern, F.; Sadler, D. J.; Jensen, C.; Wilcox, D. L.; Ewing, J. J.

    2003-12-01

    Recent advances in the development of microplasma devices fabricated in a variety of materials systems (Si, ceramic multilayers, and metal/polymer structures) and configurations are reviewed. Arrays of microplasma emitters, having inverted pyramidal Si electrodes or produced in ceramic multilayer sandwiches with integrated ballasting for each pixel, have been demonstrated and arrays as large as 30 × 30 pixels are described. A new class of photodetectors, hybrid semiconductor/microplasma devices, is shown to exhibit photoresponsivities in the visible and near-infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes. Microdischarge devices having refractory or piezoelectric dielectric films such as Al2O3 or BN have extended lifetimes (~86% of initial radiant output after 100 h with an Al2O3 dielectric) and controllable electrical characteristics. A segmented, linear array of microdischarges, fabricated in a ceramic multilayer structure and having an active length of ~1 cm and a clear aperture of 80 × 360 µm2, exhibits evidence of gain on the 460.3 nm transition of Xe+, making it the first example of a microdischarge-driven optical amplifier.

  4. Symposium GC: Nanoscale Charge Transport in Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bommisetty, Venkat [Univ. of South Dakota, Vermillion, SD (United States)

    2011-06-23

    This paper provides a summary only and table of contents of the sessions. Excitonic solar cells, including all-organic, hybrid organic-inorganic and dye-sensitized solar cells (DSSCs), offer strong potential for inexpensive and large-area solar energy conversion. Unlike traditional inorganic semiconductor solar cells, where all the charge generation and collection processes are well understood, these excitonic solar cells contain extremely disordered structures with complex interfaces which results in large variations in nanoscale electronic properties and has a strong influence on carrier generation, transport, dissociation and collection. Detailed understanding of these processes is important for fabrication of highly efficient solar cells. Efforts to improve efficiency are underway at a large number of research groups throughout the world focused on inorganic and organic semiconductors, photonics, photophysics, charge transport, nanoscience, ultrafast spectroscopy, photonics, semiconductor processing, device physics, device structures, interface structure etc. Rapid progress in this multidisciplinary area requires strong synergetic efforts among researchers from diverse backgrounds. Such effort can lead to novel methods for development of new materials with improved photon harvesting and interfacial treatments for improved carrier transport, process optimization to yield ordered nanoscale morphologies with well defined electronic structures.

  5. Nanoscale Microelectronic Circuit Development

    Science.gov (United States)

    2011-06-17

    26. Sensitivity of the transient collector and emitter currents of a npn bipolar transistor to the doping level in the n-type...collector and emitter currents of a npn bipolar transistor to the doping level in the n-type collector region. Also shown are the sensitivities computed...semiconductor transistor NPN Negative-positive-negative ns Nanosecond nsec Nanosecond (Millimicrosecond) nW Nanowatt Op amp Operational amplifier OTA

  6. Charge transport in nanoscale junctions.

    Science.gov (United States)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-03

    Understanding the fundamentals of nanoscale charge transfer is pivotal for designing future nano-electronic devices. Such devices could be based on individual or groups of molecular bridges, nanotubes, nanoparticles, biomolecules and other 'active' components, mimicking wire, diode and transistor functions. These have operated in various environments including vacuum, air and condensed matter, in two- or three-electrode configurations, at ultra-low and room temperatures. Interest in charge transport in ultra-small device components has a long history and can be dated back to Aviram and Ratner's letter in 1974 (Chem. Phys. Lett. 29 277-83). So why is there a necessity for a special issue on this subject? The area has reached some degree of maturity, and even subtle geometric effects in the nanojunction and noise features can now be resolved and rationalized based on existing theoretical concepts. One purpose of this special issue is thus to showcase various aspects of nanoscale and single-molecule charge transport from experimental and theoretical perspectives. The main principles have 'crystallized' in our minds, but there is still a long way to go before true single-molecule electronics can be implemented. Major obstacles include the stability of electronic nanojunctions, reliable operation at room temperature, speed of operation and, last but not least, integration into large networks. A gradual transition from traditional silicon-based electronics to devices involving a single (or a few) molecule(s) therefore appears to be more viable from technologic and economic perspectives than a 'quantum leap'. As research in this area progresses, new applications emerge, e.g. with a view to characterizing interfacial charge transfer at the single-molecule level in general. For example, electrochemical experiments with individual enzyme molecules demonstrate that catalytic processes can be studied with nanometre resolution, offering a route towards optimizing biosensors at

  7. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  8. Nanoscale relaxation oscillator

    Science.gov (United States)

    Zettl, Alexander K.; Regan, Brian C.; Aloni, Shaul

    2009-04-07

    A nanoscale oscillation device is disclosed, wherein two nanoscale droplets are altered in size by mass transport, then contact each other and merge through surface tension. The device may also comprise a channel having an actuator responsive to mechanical oscillation caused by expansion and contraction of the droplets. It further has a structure for delivering atoms between droplets, wherein the droplets are nanoparticles. Provided are a first particle and a second particle on the channel member, both being made of a chargeable material, the second particle contacting the actuator portion; and electrodes connected to the channel member for delivering a potential gradient across the channel and traversing the first and second particles. The particles are spaced apart a specified distance so that atoms from one particle are delivered to the other particle by mass transport in response to the potential (e.g. voltage potential) and the first and second particles are liquid and touch at a predetermined point of growth, thereby causing merging of the second particle into the first particle by surface tension forces and reverse movement of the actuator. In a preferred embodiment, the channel comprises a carbon nanotube and the droplets comprise metal nanoparticles, e.g. indium, which is readily made liquid.

  9. Characterizing Nanoscale Transient Communication.

    Science.gov (United States)

    Chen, Yifan; Anwar, Putri Santi; Huang, Limin; Asvial, Muhamad

    2016-04-01

    We consider the novel paradigm of nanoscale transient communication (NTC), where certain components of the small-scale communication link are physically transient. As such, the transmitter and the receiver may change their properties over a prescribed lifespan due to their time-varying structures. The NTC systems may find important applications in the biomedical, environmental, and military fields, where system degradability allows for benign integration into life and environment. In this paper, we analyze the NTC systems from the channel-modeling and capacity-analysis perspectives and focus on the stochastically meaningful slow transience scenario, where the coherence time of degeneration Td is much longer than the coding delay Tc. We first develop novel and parsimonious models to characterize the NTC channels, where three types of physical layers are considered: electromagnetism-based terahertz (THz) communication, diffusion-based molecular communication (DMC), and nanobots-assisted touchable communication (TouchCom). We then revisit the classical performance measure of ϵ-outage channel capacity and take a fresh look at its formulations in the NTC context. Next, we present the notion of capacity degeneration profile (CDP), which describes the reduction of channel capacity with respect to the degeneration time. Finally, we provide numerical examples to demonstrate the features of CDP. To the best of our knowledge, the current work represents a first attempt to systematically evaluate the quality of nanoscale communication systems deteriorating with time.

  10. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    Science.gov (United States)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  11. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    Science.gov (United States)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-07

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  12. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  13. Rocket Science at the Nanoscale.

    Science.gov (United States)

    Li, Jinxing; Rozen, Isaac; Wang, Joseph

    2016-06-28

    Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

  14. Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection

    Directory of Open Access Journals (Sweden)

    Shih-Hsiang Hsu

    2010-12-01

    Full Text Available To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520–1,550 nm wavelength range and the pass band was 1 nm at the −1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 27-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation.

  15. High-power MUTC photodetectors for RF photonic links

    Science.gov (United States)

    Estrella, Steven; Johansson, Leif A.; Mashanovitch, Milan L.; Beling, Andreas

    2016-02-01

    High power photodiodes are needed for a range of applications. The high available power conversion efficiency makes these ideal for antenna remoting applications, including high power, low duty-cycle RF pulse generation. The compact footprint and fiber optic input allow densely packed RF aperture arrays with low cross-talk for phased high directionality emitters. Other applications include linear RF photonic links and other high dynamic range optical systems. Freedom Photonics has developed packaged modified uni-traveling carrier (MUTC) photodetectors for high-power applications. Both single and balanced photodetector pairs are mounted on a ceramic carrier, and packaged in a compact module optimized for high power operation. Representative results include greater than 100 mA photocurrent, >100m W generated RF power and >20 GHz bandwidth. In this paper, we evaluate the saturation and bandwidth of these single ended and balanced photodetectors for detector diameter in the 16 μm to 34 μm range. Packaged performance is compared to chip performance. Further new development towards the realization of <100GHz packaged photodetector modules with optimized high power performance is described. Finally, incorporation of these photodetector structures in novel photonic integrated circuits (PICs) for high optical power application areas is outlined.

  16. Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects

    Science.gov (United States)

    Emsley, Matthew K.; Dosunmu, Olufemi I.; Muller, Paul; Unlu, M. Selim; Leblebici, Yusuf

    2003-08-01

    High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of inter-chip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, manufacturing high speed, high efficiency silicon photodetectors presents a technical challenge. Resonant cavity enhanced (RCE) Si photodetectors have been shown to provide the required bandwidth-efficiency product and we have recently developed a method to reproduce them through commercially available fabrication techniques. In this work, commercially reproducible silicon wafers with a 90% reflectance buried distributed Bragg reflector (DBR) are used to create Si-RCE photodetector arrays for optical interconnects. The Si-RCE photodetectors have 40% quantum efficiency at 860 nm, a FWHM of 25 ps, and a 3dB bandwidth in excess of 10 GHz. We also demonstrate Si-RCE 12×1 photodetector arrays that have been fabricated and packaged with silicon based amplifiers to demonstrate the feasibility of a low cost monolithic silicon photoreceiver array.

  17. A review of III–V nanowire infrared photodetectors and sensors

    Science.gov (United States)

    LaPierre, R. R.; Robson, M.; Azizur-Rahman, K. M.; Kuyanov, P.

    2017-03-01

    A review of III–V nanowire-based infrared photodetectors is provided including single nanowires, ensemble nanowires, and heterostructured nanowires. The performance metrics of reported nanowire photodetectors are compared. The potential advantages of nanowire photodetectors, including enhanced absorption, fast carrier collection, multispectral detection, and direct growth on Si, are discussed.

  18. Quantum processes in semiconductors

    CERN Document Server

    Ridley, B K

    2013-01-01

    Aimed at graduate students, this is a guide to quantum processes of importance in the physics and technology of semiconductors. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology.

  19. Edge effect in ohmic contacts on high-resistivity semiconductors

    Science.gov (United States)

    Ruzin, Arie

    2016-01-01

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

  20. Self-Powered Broadband Photodetector using Plasmonic Titanium Nitride.

    Science.gov (United States)

    Hussain, Amreen A; Sharma, Bikash; Barman, Tapan; Pal, Arup R

    2016-02-17

    We report the demonstration of plasmonic titanium nitride (TiN) for fabrication of an efficient hybrid photodetector. A novel synthesis method based on plasma nanotechnology is utilized for producing air stable plasma polymerized aniline-TiN (PPA-TiN) nanocomposite and its integration in photodetector geometry. The device performs as a self-powered detector that responds to ultraviolet and visible light at zero bias. The photodetector has the advantage of broadband absorption and outcomes an enhanced photoresponse including high responsivity and detectivity under low light conditions. This work opens up a new direction for plasmonic TiN-based hybrid nanocomposite and its exploitation in optoelectronic applications including imaging, light-wave communication and wire-free route for artificial vision.

  1. High-speed polysilicon CMOS photodetector for telecom and datacom

    Science.gov (United States)

    Atabaki, Amir H.; Meng, Huaiyu; Alloatti, Luca; Mehta, Karan K.; Ram, Rajeev J.

    2016-09-01

    Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow ("zero-change" CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.

  2. Ge-Photodetectors for Si-Based Optoelectronic Integration

    Directory of Open Access Journals (Sweden)

    Sungjoo Lee

    2011-01-01

    Full Text Available High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 µm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends.

  3. Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

    Directory of Open Access Journals (Sweden)

    Fuwei Wu

    2015-01-01

    Full Text Available Increasing the responsivity is one of the important issues for a photodetector. In this paper, we demonstrate an improved NMOSFET photodetector by using deep-n-well (DNW structure which can improve the responsivity of the photodetector significantly. The experimental results show that the responsivity can be enhanced greatly by the DNW structure and is much larger than the previous work when DNW is biased with 0.5 V, while the dark current exhibits almost no increase. Further characterization indicates that the diode formed by the bulk and DNW can efficiently absorb photons and has a large gain factor of the photocurrent especially under low light condition, which gives a more promising application for the detector to detect the weak light.

  4. Mixture interlayer for high performance organic-inorganic perovskite photodetectors

    Science.gov (United States)

    Tang, Feng; Chen, Qi; Chen, Lei; Ye, Fengye; Cai, Jinhua; Chen, Liwei

    2016-09-01

    Organic-inorganic perovskites are promising light absorbing active materials for photodetectors; however, the performance of current organic-inorganic perovskite-based photodetectors are limited by the high dark current due to hole injection at the cathode interlayer typically composed of fullerene derivatives. We have developed a mixture interlayer by simply blending polymethyl methacrylate (PMMA) with [6,6]-phenyl-C61-butyric acidmethyl ester (PCBM). Scanning Kelvin probe microscopy imaging reveals that the presence of PMMA reduced the work function of the PCBM:PMMA interlayer, which leads to increased energy barrier for hole injection and better hole-blocking property. Optimized perovskite photodetector with PCBM:PMMA hole-blocking interlayer exhibits a high detectivity of 1.1 × 1013 Jones, a broad linear dynamic range of 112 dB, and a fast response time of 2.2 μs.

  5. Fabrication and preliminary characterization of infrared photodetectors based on graphene

    Science.gov (United States)

    Mroczyński, R.; Kwietniewski, N.; Piotrowski, J.; Judek, J.; Zdrojek, M.; Szczepański, P.

    2016-12-01

    In this work, we report the technology of infrared photodetectors based on graphene layers (GLs). In the course of this work the new set of photolithography masks was especially designed to fabricate test structures. The new masks-set contains a matrix of different types of photodetector structures with varied active area dimensions, as well as additional module for characterization of electro-physical parameters of graphene and graphene-based devices. After careful optimization of consecutive technological steps, test structures were fabricated. First results of electrical characterization of obtained graphene-based photodetectors demonstrated that the developed technology was successful, however, further detailed optical characterization towards sensing parameters and potential applications in infrared detectors is necessary.

  6. Advanced Semiconductor Devices

    Science.gov (United States)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  7. Nanoscale waveguiding methods.

    Science.gov (United States)

    Wang, Chia-Jean; Lin, Lih Y

    2007-05-01

    While 32 nm lithography technology is on the horizon for integrated circuit (IC) fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD) arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

  8. Anatomy of Nanoscale Propulsion.

    Science.gov (United States)

    Yadav, Vinita; Duan, Wentao; Butler, Peter J; Sen, Ayusman

    2015-01-01

    Nature supports multifaceted forms of life. Despite the variety and complexity of these forms, motility remains the epicenter of life. The applicable laws of physics change upon going from macroscales to microscales and nanoscales, which are characterized by low Reynolds number (Re). We discuss motion at low Re in natural and synthetic systems, along with various propulsion mechanisms, including electrophoresis, electrolyte diffusiophoresis, and nonelectrolyte diffusiophoresis. We also describe the newly uncovered phenomena of motility in non-ATP-driven self-powered enzymes and the directional movement of these enzymes in response to substrate gradients. These enzymes can also be immobilized to function as fluid pumps in response to the presence of their substrates. Finally, we review emergent collective behavior arising from interacting motile species, and we discuss the possible biomedical applications of the synthetic nanobots and microbots.

  9. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  10. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  11. The Physics of Quantum Well Infrared Photodetectors

    CERN Document Server

    Choi, K K

    1999-01-01

    In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the ne

  12. Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection

    Science.gov (United States)

    Sabri Alirezaei, Iman; Burte, Edmund P.

    2016-03-01

    This paper presents a design and simulation of a novel high performance 3D-silicon photodetector for implementing in the low intensity light detection at room temperature (300K). The photodetector is modeled by inspiration of general MEMS fabrication to make a 3D- structure in the silicon substrate using a bulk micromachining process, and based on a complementary metal-oxide semiconductor (CMOS) technology. The design includes a vertical n+/p junction as an optical window for lateral illumination. The simulation is carried out using COMSOL Multiphysics relying on theoretical and physical concepts, and then, the assessment of the results is done by the numerical analysis with SILVACO (Atlas) device simulator. Light is regarded as a monochromatic beam with a wavelength of 633nm that is placed 1μm far from the optical window. The simulation is considered under the reverse bias dc voltage in the steadystate. We present photocurrent-voltage (Iph-V) characteristics under different light intensities (2… 10[mW/cm2]), and dark current-voltage (Id-V) characteristics. Comparative studies of sensitivity dependence on the dopant concentration in the substrate as an intrinsic region are accomplished utilizing two different p-type silicon substrates with 1×1015 [1/cm3] and 4×1012 [1/cm3] doping concentration. Moreover, the sensitivity is evaluated with respect to the active substrate thickness. The simulated results confirmed that the high optical sensitivity of the photodetector with low dark current can be realized in this model.

  13. Visible Light Communication System Using an Organic Bulk Heterojunction Photodetector

    Directory of Open Access Journals (Sweden)

    Cristina de Dios

    2013-09-01

    Full Text Available A visible light communication (VLC system using an organic bulk heterojunction photodetector (OPD is presented. The system has been successfully proven indoors with an audio signal. The emitter consists of three commercial high-power white LEDs connected in parallel. The receiver is based on an organic photodetector having as active layer a blend of poly(3-hexylthiophene (P3HT and phenyl C61-butyric acid methyl ester (PCBM. The OPD is opto-electrically characterized, showing a responsivity of 0.18 A/W and a modulation response of 790 kHz at −6 V.

  14. Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics.

    Science.gov (United States)

    Wang, Xudong; Wang, Peng; Wang, Jianlu; Hu, Weida; Zhou, Xiaohao; Guo, Nan; Huang, Hai; Sun, Shuo; Shen, Hong; Lin, Tie; Tang, Minghua; Liao, Lei; Jiang, Anquan; Sun, Jinglan; Meng, Xiangjian; Chen, Xiaoshuang; Lu, Wei; Chu, Junhao

    2015-11-01

    A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

  15. Photonic crystal cavity-assisted upconversion infrared photodetector.

    Science.gov (United States)

    Gan, Xuetao; Yao, Xinwen; Shiue, Ren-Jye; Hatami, Fariba; Englund, Dirk

    2015-05-18

    We describe an upconversion infrared photodetector assisted by a gallium phosphide photonic crystal nanocavity directly coupled to a silicon photodiode. The strongly cavity-enhanced second harmonic signal radiating from the gallium phosphide membrane can thus be efficiently collected by the silicon photodiode, which promises a high photoresponsivity of the upconversion detector as 0.81 A/W with the coupled power of 1W. The integrated upconversion photodetector also functions as a compact autocorrelator with sub-ps resolution for measuring pulse width and chirp.

  16. Large Area Pico-second Photodetectors (LAPPD) in Liquid Argon

    Science.gov (United States)

    Dharmapalan, Ranjan; Lappd Collaboration

    2015-04-01

    The Large Area Pico-second Photodetector (LAPPD) project has recently produced the first working devices with a small form factor and pico-second timing resolution. A number of current and proposed neutrino and dark matter experiments use liquid argon as a detector medium. A flat photodetector with excellent timing resolution will help with background suppression and improve the overall sensitivity of the experiment. We present the research done and some preliminary results to customize the LAPPD devices to work in a cryogenic environment. Argonne National Laboratory (LDRD) and DOE.

  17. Optical and thermophysical parameters measurement using sandwich photodetectors

    Science.gov (United States)

    Turinov, Valery I.

    1993-12-01

    A method is reported for estimating thermophysical and optical parameters, in which a two- spectral band sandwich photodetector is used. The sensitivity ranges of such a sensor are 2 - 5 micrometers and 8 - 14 micrometers . On irradiating an object's surface by a short radiation pulse the photodetector collected signals U1, U2 and the rates of their changes (dU1/dt), (dU2/dt) are recorded. These pertain to the same area on the object's surface and belong to the two spectral ranges mentioned. The parameters of the object are evaluated by means of calculations with the values measured.

  18. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    Science.gov (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS

  19. A high-sensitivity, fast-response, rapid-recovery UV photodetector fabricated based on catalyst-free growth of ZnO nanowire networks on glass substrate

    Science.gov (United States)

    Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.

    2016-10-01

    Here, we report for the first time the fabrication of metal-semiconductor-metal ultraviolet photodetector based on catalyst-free growth of ZnO nanowire networks on ITO seeds/glass substrates by thermal evaporation method. The morphological, structural, and optical properties of the sample were studied by using field emission scanning electron microscopy, X-ray diffraction, photoluminescence, and UV-Vis spectrophotometer. Upon exposure to 365 nm light (1.5 mW/cm2) at five-bias voltage, the device showed 2.32 × 103 sensitivity. In addition, the photocurrent was 1.79 × 10-4 A, and the internal gain of the photodetector was 24.2. The response and the recovery times were calculated to be 3.9 and 2.6 s, respectively, upon illumination to a pulse UV light (365 nm, 1.5 mW/cm2) at five-bias voltage. All of these results demonstrate that this high-quality detector can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  20. Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO{sub 2}/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Çalışkan, Deniz, E-mail: dcaliskan@fen.bilkent.edu.tr [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Bütün, Bayram; Çakır, M. Cihan [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Özcan, Şadan [Department of Physics Engineering, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Özbay, Ekmel [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800 Bilkent, Ankara (Turkey)

    2014-10-20

    ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO{sub 2} on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm{sup 2} current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.

  1. MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates

    Science.gov (United States)

    Liu, Amy W. K.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Wu, Ying; Furlong, Mark J.; Tybjerg, Marius; Martinez, Rebecca J.; Mowbray, Andrew; Smith, Brian

    2015-06-01

    The GaSb-based 6.1 Å lattice constant family of materials and heterostructures provides rich bandgap engineering possibilities and have received considerable attention for their potential and demonstrated performance in infrared (IR) detection and imaging applications. Mid-wave and long-wave IR photodetectors are progressing toward commercial manufacturing applications. To succeed, they must move from research laboratory settings to general semiconductor production, and high-quality GaSb-based epitaxial wafers with diameter larger than the current standard 3-inch are highly desirable. 4-inch GaSb substrates have been in production for a couple of years and are now commercially available. Recently, epi-ready GaSb substrates with diameter in excess of 6-inch were successfully produced. In this work, we report on the MBE (Molecular Beam Epitaxy) growth of generic MWIR bulk nBn photodetectors on 6-inch diameter GaSb substrates. The surface morphology, optical and structural quality of the epiwafers as evaluated by atomic force microscopy (AFM), Nomarski microscopy, low temperature photoluminescence (PL) spectroscopy, and high-resolution x-ray diffraction (XRD) will be discussed. Current density versus voltage (J-V) and photoresponsivity measurements from large-area mesa diode fabricated will also be reported. Material and device properties of these 6-inch epiwafers will be compared to similar structures grown on commercially available 4-inch diameter GaSb substrates.

  2. Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures.

    Science.gov (United States)

    Li, Guanghui; Suja, Mohammad; Chen, Mingguang; Bekyarova, Elena; Haddon, Robert C; Liu, Jianlin; Itkis, Mikhail E

    2017-10-05

    Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10(3), a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10(5) due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron-phonon interactions leading to exciton formation. In this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10-20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron-hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

  3. Graphene photodetectors with a bandwidth  >76 GHz fabricated in a 6″ wafer process line

    Science.gov (United States)

    Schall, Daniel; Porschatis, Caroline; Otto, Martin; Neumaier, Daniel

    2017-03-01

    In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit s-1 per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6″ silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices.

  4. Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

    CERN Document Server

    Xu, Zhijuan; Li, Xiaoqiang; Zhang, Shengjiao; Wu, Zhiqian; Xu, Wenli; Lu, Yanghua; Xu, Sen

    2015-01-01

    Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 650 nm with responsivity as 446 mA/W and detectivity as 5.9E13 Jones (Jones = cm Hz^1/2 W^-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 582 mA/W for incident light of 650 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 3.2E14 Jones for incident light of 650 nm, which is higher than all the reported values of the MoS2 based photodetectors. Further investigations reveal that the MoS2/GaAs based photodete...

  5. Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Epstein, Arthur J. [Professor

    2013-09-10

    Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene was demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.

  6. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

    Science.gov (United States)

    Ishikawa, Kenji; Karahashi, Kazuhiro; Ichiki, Takanori; Chang, Jane P.; George, Steven M.; Kessels, W. M. M.; Lee, Hae June; Tinck, Stefan; Um, Jung Hwan; Kinoshita, Keizo

    2017-06-01

    In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

  7. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  8. Modification of Inert Gas Condensation Technique to Achieve Wide Area Distribution of Nanoparticles and Synthesis and Characterization of Nanoparticles for Semiconductor Applications

    Science.gov (United States)

    Pandya, Sneha G.

    The aim of this dissertation is to develop a versatile experimental technique for synthesis of nanoparticles (NPs), which can be used to deposit NPs in various patterns for semiconductor device applications. In addition, the dissertation also aims at the synthesis and characterization of semiconductor NPs capable of nano-scale temperature measurement and infrared sensing. (Abstract shortened by ProQuest.).

  9. Quantum machines at the nanoscale

    OpenAIRE

    2015-01-01

    Thermodynamic machines have been studied for two centuries. The rapid advancement in fabrication techniques of the last decades has lead to size reduction from the macroscale to nanoscale. At the nanoscale, quantum properties become important and have thus to be fully taken into account. Quantum heat engines have been the subject of extensive theoretical studies in the last fifty years. However, while classical micro heat engines have been fabricated, to date no quantum heat engine has bee...

  10. Nanoscale technology in biological systems

    CERN Document Server

    Greco, Ralph S; Smith, R Lane

    2004-01-01

    Reviewing recent accomplishments in the field of nanobiology Nanoscale Technology in Biological Systems introduces the application of nanoscale matrices to human biology. It focuses on the applications of nanotechnology fabrication to biomedical devices and discusses new physical methods for cell isolation and manipulation and intracellular communication at the molecular level. It also explores the application of nanobiology to cardiovascular diseases, oncology, transplantation, and a range of related disciplines. This book build a strong background in nanotechnology and nanobiology ideal for

  11. A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

    Directory of Open Access Journals (Sweden)

    Narottam Das

    2013-01-01

    Full Text Available A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs is performed by implementation of 2D finite-difference time-domain (FDTD algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.

  12. CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector

    KAUST Repository

    Maculan, Giacomo

    2015-09-02

    Single crystals of hybrid perovskites have shown remarkably improved physical properties compared to their polycrystalline film counterparts, underscoring their importance in the further development of advanced semiconductor devices. Here we present a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal CH3NH3PbCl3. The chloride-based perovskite crystals exhibit trap-state density, charge carriers concentration, mobility and diffusion length comparable with the best quality crystals of methylammonium lead iodide or bromide perovskites reported so far. The high quality of the crystal along with its suitable optical bandgap enabled us to design and build an efficient visible-blind UV-photodetector, demonstrating the potential of this material to be employed in optoelectronic applications.

  13. Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy

    Science.gov (United States)

    Loubychev, Dmitri; Fastenau, Joel M.; Kattner, Michael; Frey, Phillip; Liu, Amy W. K.; Furlong, Mark J.

    2017-02-01

    GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave and long-wave IR photodetector applications. With the maturation of the MBE growth process, focus is now turned to improving manufacturing readiness and the transition to the production of large-format wafers. We will discuss the transition from the development of early detector layer structures on 2" diameter GaSb substrates, through today's 3"/4" production standard, and to the onset of 5" pilot production from the perspective of volume compound semiconductor manufacturing. We will report on the growth of 5" GaSb-based MWIR nBn detector structures using a large format 5×5" production MBE platform. Structural and optical properties, as well as electrical data from large-area mesa diodes will be presented and compared with results achieved with smaller batch size MBE reactor platform.

  14. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol;

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...

  15. High performance broadband photodetector using fabricated nanowires of bismuth selenide.

    Science.gov (United States)

    Sharma, Alka; Bhattacharyya, Biplab; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

    2016-01-11

    Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.

  16. Thiol passivation of MWIR type II superlattice photodetectors

    Science.gov (United States)

    Salihoglu, O.; Muti, A.; Aydinli, A.

    2013-06-01

    Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

  17. High-performance polymer photovoltaic cells and photodetectors

    Science.gov (United States)

    Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

    2001-02-01

    Polymer photovoltaic cells and photodetectors have passed their infancy and become mature technologies. The energy conversion efficiency of polymer photovoltaic cells have been improved to over 4.1% (500 nm, 10 mW/cm2). Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart- windows. The development of polymer photodetectors is even faster. The performance parameters have been improved to the level meeting all specifications for practical applications. The polymer photodetectors are of high photosensitivity (approximately 0.2 - 0.3 A/Watt in visible and UV), low dark current (0.1 - 1 nA/cm2), large dynamic range (> 8 orders of magnitude), linear intensity dependence, low noise level and fast response time (to nanosecond time domain). These devices show long shelf and operation lives. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make the polymer photodetectors promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

  18. Mid-Infrared Lasers With Low Threshold and Photodetectors

    Institute of Scientific and Technical Information of China (English)

    A. Z. Li; A. Y. Cho; H. Li; Y. G. Zhang; X. Zhang; Y. L. Zheng; G. Y. Xu; M. Qi; C. Gmachl; M. L. Peabody

    2003-01-01

    We report the growth, fabrication, and operation of 2.0μm InGaAsSb/AlGaAsSb laser diodes and 8.5μm GaInAs/AlInAs quantum cascade lasers with low threshold current and the latest improvements in the performance of InGaAsSb photodetectors by passivation treatment.

  19. High performance broadband photodetector using fabricated nanowires of bismuth selenide

    Science.gov (United States)

    Sharma, Alka; Bhattacharyya, Biplab; Srivastava, A. K.; Senguttuvan, T. D.; Husale, Sudhir

    2016-01-01

    Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.

  20. Silicon resonant cavity enhanced photodetector arrays for optical interconnects

    Science.gov (United States)

    Emsley, Matthew Kent

    High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of inter-chip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, manufacturing high speed, high efficiency silicon photodetectors presents a technical challenge. Resonant cavity enhanced photodetectors have been shown to provide the required bandwidth-efficiency product but have remained a challenge to reproduce through commercially available fabrication techniques. In this work, commercially reproducible silicon wafers with a high reflectance buried distributed Bragg reflector (DBR) have been designed and fabricated. The substrates consist of a two-period, 90% reflecting, DBR fabricated using a double silicon-on-insulator (SOI) process. Resonant-cavity-enhanced (RCE) Si photodetectors have been fabricated with 40% quantum efficiency at 860 nm, a FWHM of 25 ps, and a 3dB bandwidth in excess of 10 GHz. Si RCE 12 x 1 photodetector arrays have been fabricated and packaged with silicon based amplifiers to demonstrate the feasibility of a low cost monolithic silicon photoreceiver array.

  1. Complex Type-II Interband Cascade MQW Photodetectors

    Science.gov (United States)

    Yang, Rui

    2007-01-01

    Multiple-quantum-well (MQW) photodetectors of a proposed type would contain active regions comprising multiple superlattice subregions. These devices would have complex structures: The superlattice of each subregion would be designed for enhanced absorption of photons in a desired wavelength band (typically in the infrared) and multiple subregions of different design would be cascaded for multicolor operation. The designs of these photodetectors would take advantage of the characteristic alignment of the edges of the electron-energy bands in type-II quantum-well structures: Within each finite superlattice, interband transitions would be used for detecting photons, and between finite superlattices, intraband relaxation and interband tunneling would be used for transport of charge carriers, all such as to enable detection of normally incident photons. Absorption of photons in the active region of a photodetector according to the proposal could be significantly enhanced by designing the superlattice/MQW structures to contain closely spaced energy states. The photodetector could be operated with a small bias to facilitate transport of charge carriers. The superlattices could be somewhat chirped, with a preferred transport direction.

  2. Nanoscale waveguiding methods

    Directory of Open Access Journals (Sweden)

    Wang Chia-Jean

    2007-01-01

    Full Text Available AbstractWhile 32 nm lithography technology is on the horizon for integrated circuit (IC fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

  3. Capillarity at the nanoscale.

    Science.gov (United States)

    van Honschoten, Joost W; Brunets, Nataliya; Tas, Niels R

    2010-03-01

    In this critical review we treat the phenomenon of capillarity in nanoscopic confinement, based on application of the Young-Laplace equation. In classical capillarity the curvature of the meniscus is determined by the confining geometry and the macroscopic contact angle. We show that in narrow confinement the influence of the disjoining pressure and the related wetting films have to be considered as they may significantly change the meniscus curvature. Nanochannel based static and dynamic capillarity experiments are reviewed. A typical effect of nanoscale confinement is the appearance of capillarity induced negative pressure. Special attention is paid to elasto-capillarity and electro-capillarity. The presence of electric fields leads to an extra stress term to be added in the Young-Laplace equation. A typical example is the formation of the Taylor cone, essential in the theory of electrospray. Measurements of the filling kinetics of nanochannels with water and aqueous salt solutions are discussed. These experiments can be used to characterize viscosity and apparent viscosity effects of water in nanoscopic confinement. In the final section we show four examples of appearances of capillarity in engineering and in nature (112 references).

  4. Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation)

    Science.gov (United States)

    Rafique, Subrina; Han, Lu; Zhao, Hongping

    2017-03-01

    Deep-ultraviolet (DUV) photodetectors based on wide bandgap (WB) semiconductor materials have attracted strong interest because of their broad applications in military surveillance, fire detection and ozone hole monitoring. Monoclinic β-Ga2O3 with ultra-wide bandgap of 4.9 eV is a promising candidate for such application because of its high optical transparency in UV and visible wavelength region, and excellent thermal and chemical stability at elevated temperatures. Synthesis of high qualityβ-Ga2O3 thin films is still at its early stage and knowledge on the origins of defects in this material is lacking. The conventional epitaxy methods used to grow β-Ga2O3 thin films such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) still face great challenges such as limited growth rate and relatively high defects levels. In this work, we present the growth of β-Ga2O3 thin films on c-plane (0001) sapphire substrate by our recently developed low pressure chemical vapor deposition (LPCVD) method. The β-Ga2O3 thin films synthesized using high purity metallic gallium and oxygen as the source precursors and argon as carrier gas show controllable N-type doping and high carrier mobility. Metal-semiconductor-metal (MSM) photodetectors (PDs) were fabricated on the as-grown β-Ga2O3 thin films. Au/Ti thin films deposited by e-beam evaporation served as the contact metals. Optimization of the thin film growth conditions and the effects of thermal annealing on the performance of the PDs were investigated. The responsivity of devices under 250 nm UV light irradiation as well as dark light will be characterized and compared.

  5. Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

    Science.gov (United States)

    Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

    2017-05-01

    This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

  6. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    luminescence was measured from 5 K up to 300 K using a closed-cycle refrigeration cryostat with a diamond window. Figure 61 shows the PL spectra...degrade faster than the optical properties [18]. REFERENCES [1] Porter , V. J., Mentzel, T., Charpentier, S., Kastner, M. A. and Bawendi, M. G...Characterization of high performance PbS photodetectors,” J. Optoelectronics and Adv. Mater. 10 (2), 306–310 (2008). [5] Jarosz, M. V., Porter , V

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. EXAFS and XANES analysis of oxides at the nanoscale

    Directory of Open Access Journals (Sweden)

    Alexei Kuzmin

    2014-11-01

    Full Text Available Worldwide research activity at the nanoscale is triggering the appearance of new, and frequently surprising, materials properties in which the increasing importance of surface and interface effects plays a fundamental role. This opens further possibilities in the development of new multifunctional materials with tuned physical properties that do not arise together at the bulk scale. Unfortunately, the standard methods currently available for solving the atomic structure of bulk crystals fail for nanomaterials due to nanoscale effects (very small crystallite sizes, large surface-to-volume ratio, near-surface relaxation, local lattice distortions etc.. As a consequence, a critical reexamination of the available local-structure characterization methods is needed. This work discusses the real possibilities and limits of X-ray absorption spectroscopy (XAS analysis at the nanoscale. To this end, the present state of the art for the interpretation of extended X-ray absorption fine structure (EXAFS is described, including an advanced approach based on the use of classical molecular dynamics and its application to nickel oxide nanoparticles. The limits and possibilities of X-ray absorption near-edge spectroscopy (XANES to determine several effects associated with the nanocrystalline nature of materials are discussed in connection with the development of ZnO-based dilute magnetic semiconductors (DMSs and iron oxide nanoparticles.

  9. Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector.

    Science.gov (United States)

    Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

    2014-12-20

    An uncooled photon detector is fabricated for the mid-wave infrared (MWIR) wavelength of 4.21 μm by doping an n-type 4H-SiC substrate with gallium using a laser doping technique. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. This energy level was confirmed by optical absorption spectroscopy. The detection mechanism involves photoexcitation of carriers by the photons of this wavelength absorbed in the semiconductor. The resulting changes in the carrier densities at different energy levels modify the refractive index and, therefore, the reflectance of the semiconductor. This change in the reflectance constitutes the optical response of the detector, which can be probed remotely with a laser beam such as a He-Ne laser and the power of the reflected probe beam can be measured with a conventional laser power meter. The noise mechanisms in the probe laser, silicon carbide MWIR detector, and laser power meter affect the performance of the detector in regards to aspects such as the responsivity, noise equivalent temperature difference (NETD), and detectivity. For the MWIR wavelengths of 4.21 and 4.63 μm, the experimental detectivity of the optical photodetector of this study was found to be 1.07×10(10)  cm·Hz(1/2)/W, while the theoretical value was 1.11×10(10)  cm·Hz(1/2)/W. The values of NETD are 404 and 15.5 mK based on experimental data for an MWIR radiation source with a temperature of 25°C and theoretical calculations, respectively.

  10. 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

    CERN Document Server

    Saraniti, M; Nonequilibrium Carrier Dynamics in Semiconductors

    2006-01-01

    International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications.

  11. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  12. Semiconductor bridge (SCB) detonator

    Science.gov (United States)

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  13. Nanoscale solid-state cooling: a review

    Science.gov (United States)

    Ziabari, Amirkoushyar; Zebarjadi, Mona; Vashaee, Daryoosh; Shakouri, Ali

    2016-09-01

    The recent developments in nanoscale solid-state cooling are reviewed. This includes both theoretical and experimental studies of different physical concepts, as well as nanostructured material design and device configurations. We primarily focus on thermoelectric, thermionic and thermo-magnetic coolers. Particular emphasis is given to the concepts based on metal-semiconductor superlattices, graded materials, non-equilibrium thermoelectric devices, Thomson coolers, and photon assisted Peltier coolers as promising methods for efficient solid-state cooling. Thermomagnetic effects such as magneto-Peltier and Nernst-Ettingshausen cooling are briefly described and recent advances and future trends in these areas are reviewed. The ongoing progress in solid-state cooling concepts such as spin-calorimetrics, electrocalorics, non-equilibrium/nonlinear Peltier devices, superconducting junctions and two-dimensional materials are also elucidated and practical achievements are reviewed. We explain the thermoreflectance thermal imaging microscopy and the transient Harman method as two unique techniques developed for characterization of thermoelectric microrefrigerators. The future prospects for solid-state cooling are briefly summarized.

  14. Nanoscale solid-state cooling: a review.

    Science.gov (United States)

    Ziabari, Amirkoushyar; Zebarjadi, Mona; Vashaee, Daryoosh; Shakouri, Ali

    2016-09-01

    The recent developments in nanoscale solid-state cooling are reviewed. This includes both theoretical and experimental studies of different physical concepts, as well as nanostructured material design and device configurations. We primarily focus on thermoelectric, thermionic and thermo-magnetic coolers. Particular emphasis is given to the concepts based on metal-semiconductor superlattices, graded materials, non-equilibrium thermoelectric devices, Thomson coolers, and photon assisted Peltier coolers as promising methods for efficient solid-state cooling. Thermomagnetic effects such as magneto-Peltier and Nernst-Ettingshausen cooling are briefly described and recent advances and future trends in these areas are reviewed. The ongoing progress in solid-state cooling concepts such as spin-calorimetrics, electrocalorics, non-equilibrium/nonlinear Peltier devices, superconducting junctions and two-dimensional materials are also elucidated and practical achievements are reviewed. We explain the thermoreflectance thermal imaging microscopy and the transient Harman method as two unique techniques developed for characterization of thermoelectric microrefrigerators. The future prospects for solid-state cooling are briefly summarized.

  15. Simulation, Fabrication, and Characterization of Al-Doped ZnO-Based Ultraviolet Photodetectors

    Science.gov (United States)

    Singh, Shaivalini

    2016-01-01

    This paper reports a simulation and experimental study of aluminum-doped zinc oxide (AZO)-based metal-semiconductor-metal (MSM) photodetectors. High-quality AZO thin films were deposited on p-type Si substrates by radiofrequency (RF) sputtering method. Interdigitated palladium metal electrodes were designed over AZO/Si samples by lithographic technique. I- V detector characteristics were investigated in dark as well as illuminated condition, using an ultraviolet (UV) source with wavelength of 0.372 μm and power of 2.8 × 10-6 W. Four different MSM devices with the same width and finger spacing of 5 μm, 10 μm, 20 μm, and 50 μm were fabricated, and the effect of finger spacing on the MSM detector I- V characteristics was investigated. It was found that the photocurrent increased by more than two orders of magnitude with UV light illumination. Simulation of these MSM devices was also carried out by using SENTAURUS TCAD software. The variation of the resistance with the electrode spacing for the MSM devices was examined by both experiment and simulation. The simulated and experimental results were compared and found to be in good agreement with each other. In both conditions (dark as well as under UV illumination), the resistance increased as the spacing between the electrodes was increased. These simulation studies will be useful for designing high-performance optoelectronic devices.

  16. Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

    Directory of Open Access Journals (Sweden)

    Batool Eneaze B. Al-Jumaili

    2016-01-01

    Full Text Available Achieving a cheap and ultrafast metal-semiconductor-metal (MSM photodetector (PD for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi based MSM PD with platinum (Pt contact electrodes. Such NPSi samples are grown from n-type Si (100 wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311 lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

  17. Fabrication, Packaging, and Performance of VCSELs and Photodetectors for Space Applications

    Energy Technology Data Exchange (ETDEWEB)

    Armendariz, M.G.; Briggs, R.D.; Choquette, K.D.; Geib, K.M.; Serkland, D.K.

    1999-03-09

    Optocouplers are used for a variety of applications aboard spacecraft including electrical isolation, switching and power transfer. Commercially available light emitting diode (LED)-based optocouplers have experienced severe degradation of light output due to extensive displacement damage occurring in the semiconductor lattice caused by energetic proton bombardment. A new optocoupler has been designed and fabricated which utilizes vertical cavity surface emitting laser (VCSEL) and resonant cavity photodetector (RCPD) technologies for the optocoupler emitter and detector, respectively. Linear arrays of selectively oxidized GaAs/AlGaAs VCSELS and RCPDS, each designed to operate at a wavelength of 850nm, were fabricated using an airbridge contacting scheme. The airbridged contacts were designed to improve packaging yields and device reliability by eliminating the use of a polyimide planarizing layer which provided poor adhesion to the bond pad metallization. Details of the airbridged optocoupler fabrication process are reported. Discrete VCSEL and RCPD devices were characterized at temperatures between {minus}100 to 100 C. Devices were packaged in a face-to-face configuration to form a single channel optocoupler and its performance was evaluated under conditions of high-energy proton bombardment.

  18. SPM system for semiconductor device applications.

    Science.gov (United States)

    Itoh, Hiroshi; Odaka, Takahiro; Niitsuma, Junichi

    2014-11-01

    Recently, scanning probe microscopy (SPM) is widely used for development of semiconductor devices. One of the important functions of SPM is high resolution topography, such as shape of the nanoscale devices and surface roughness of the films. Additionally, SPM can measure the electronic structure of the nanoscale-devices. SPM system for thin films was developed to characterize the thin films for device applications.First, SPM system which can be apply short pulses to the sample holder is constructed to evaluate the electronic response of the thin film without using complex patterning on the Si wafer as shown in Fig. 1. Current design rule of the semiconductor devices is around 20 nm. The dimension of the devices are close to the probe radius of conductive SPM probes. The instrument was designed to characterize not only the static properties of nanoscale devices, but also the dynamic electronic properties. Shortest pulses which can be applied to the sample without destroying waveform were less than 50 nS. Time response of the current amplifier is ranging from 50 nS to 200 nS depending on the trans-impedance gains. The conditions (time and dimension) are similar to the active devices on the chip in the circuit. Thus, dynamic electronic properties of the thin films can be tested on a film without fabricating to the nanoscale devices. It is very helpful to optimizing the depositing conditions, such as sputtering parameters, of the thin film for semiconductor devices. For example, the system is used to optimize the film qualities for resistive memories [1].jmicro;63/suppl_1/i13-a/DFU091F1F1DFU091F1Fig. 1.Conductive probe microscopy, which is compatible to the pulse signals ranging to 50nS. The second function of the SPM system is the reproducible roughness measurement. Roughness of the film is also important for optimizing the depositing conditions of the thin film. Virtual reference probe method was developed for removing the variations of the SPM probes [2]. One of

  19. Nanoelectronics in oxides and semiconductors

    Science.gov (United States)

    Cheng, Guanglei

    The success of silicon industry lies on three major properties of silicon, an easily formed oxide layer to allow field effect operation, tunability of carrier density and high device scalability. All these features exist in oxides, together with some novel properties such as ferroelectricity, magnetic effects and metal-insulator transition. With the recent development in material growth method including molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and reflection high energy electron diffraction (REED), atomically engineered oxide interfaces become available, thus opening the door to the novel oxide nanoelectronics. In this dissertation we create and study nanoelectronics in oxides, semiconductors and hybrid of these two. We used a conductive atomic force microscope tip to write single electron transistors in the 3-unit-cell-LaAlO 3/SrTiO3 heterostructure and observed ferroelectric tunneling behaviors. We also fabricated ferroelectric field transistors directly on silicon using strained SrTiO3 ferroelectric film and further confirmed the ferroelectric properties of this device. Meanwhile, we developed an ultrasensitive microwave capacitance sensor to study the electronic properties of self-assembled quantum dots and the switching mechanism of memristive devices. The integration of this sensor to a home made atomic force microscope provides an important tool to study the dielectric properties at nanoscale.

  20. Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization

    OpenAIRE

    Karagöz, Ayşe; Craciun, V.; Başım, Gül Bahar

    2015-01-01

    This study focuses on the characterization of nano-scale metal oxide films for chemical mechanical planarization (CMP) applications. The protective nature of the self-grown metal oxide layers in the CMP slurry environment enable topographic selectivity required for metallization of interconnects. Tungsten was selected as the model metal film to study the formation and characteristics of the metal oxide nano-layers since tungsten CMP is very well-established in conventional semiconductor manuf...

  1. Colloidal quantum dot photodetectors (Presentation Recording)

    Science.gov (United States)

    Adinolfi, Valerio; Sargent, Edward H.

    2015-08-01

    Colloidal quantum dots (CQDs) are emerging solution processed materials combining low cost, easy deposition on large and flexible substrates, and bandgap tunability. The latter feature, which allows spectral tuning of the absorption profile of the semiconductor, makes these materials particularly attractive for light detection applications. Lead sulfide (PbS) CQDs, in particular, have shown astonishing performance as a light sensitive material operating at visible and infrared (IR) wavelengths. Early studies of PbS CQDs used as a photosensitive resistor (photoconductor) showed an impressive responsivity - exceeding 1000 A/W - and a detectivity (D*) higher then 10^13 Jones. This impressive D* was preserved in the successive development of the first PbS CQD photodiode, showing the possibility to realize fast - f_3db > 1Mhz - and sensitive IR detectors. Currently, the field is moving toward the development of hybrid devices and phototransitors. PbS CQDs have been combined in field effect transistors (FETs) with graphene and MoS2 channels, showing ultra-high gain (exceeding 10^8 electrons/photons) and high D*. Recently a photo-junction FET (photo-JFET) has been reported that breaks the inherent dark current/gain/bandwidth compromise affecting photoconductive light detectors. With this presentation we offer a broad overview on CQD photodetection highlighting the past achievements, the benefits, the challenges and the prospects for the future research on this field.

  2. A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect

    Institute of Scientific and Technical Information of China (English)

    Zhu Zhang-Ming; Li Ru; Hao Bao-Tian; Yang Yin-Tang

    2009-01-01

    Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor (CMOS) process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design (CAD) of very large-scale integrated circuits (VLSIs) in nano-scale technologies.

  3. Sensing at the nanoscale

    Science.gov (United States)

    Demming, Anna; Hierold, Christofer

    2013-11-01

    The merits of nanostructures in sensing may seem obvious, yet playing these attributes to their maximum advantage can be a work of genius. As fast as sensing technology is improving, expectations are growing, with demands for cheaper devices with higher sensitivities and an ever increasing range of functionalities and compatibilities. At the same time tough scientific challenges like low power operation, noise and low selectivity are keeping researchers busy. This special issue on sensing at the nanoscale with guest editor Christofer Hierold from ETH Zurich features some of the latest developments in sensing research pushing at the limits of current capabilities. Cheap and easy fabrication is a top priority. Among the most popular nanomaterials in sensing are ZnO nanowires and in this issue Dario Zappa and colleagues at Brescia University in Italy simplify an already cheap and efficient synthesis method, demonstrating ZnO nanowire fabrication directly onto silicon substrates [1]. Meanwhile Nicolae Barson and colleagues in Germany point out the advantages of flame spray pyrolysis fabrication in a topical review [2] and, maximizing on existing resources, researchers in Denmark and Taiwan report cantilever sensing using a US20 commercial DVD-ROM optical pickup unit as the readout source [3]. The sensor is designed to detect physiological concentrations of soluble urokinase plasminogen activator receptor, a protein associated with inflammation due to HIV, cancer and other infectious diseases. With their extreme properties carbon nanostructures feature prominently in the issue, including the demonstration of a versatile and flexible carbon nanotube strain sensor [4] and a graphene charge sensor with sensitivities of the order of 1.3 × 10-3 e Hz-1/2 [5]. The issue of patterning for sensing devices is also tackled by researchers in the US who demonstrate a novel approach for multicomponent pattering metal/metal oxide nanoparticles on graphene [6]. Changes in electrical

  4. Nanoscale phase change memory materials.

    Science.gov (United States)

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-01

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  5. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  6. Applications of Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    LI Te; SUN Yan-fang; NING Yong-qiang; WANG Li-jun

    2005-01-01

    An overview of the applications of semiconductor lasers is presented. Diode lasers are widely used today,and the most prevalent use of the laser is probably in CD and DVD drives for computers and audio/video media systems. Semiconductor lasers are also used in many other fields ranging from optical fiber communications to display,medicine and pumping sources.

  7. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  8. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  9. Fabrication of nanoscale electrostatic lenses

    Science.gov (United States)

    Sinno, I.; Sanz-Velasco, A.; Kang, S.; Jansen, H.; Olsson, E.; Enoksson, P.; Svensson, K.

    2010-09-01

    The fabrication of cylindrical multi-element electrostatic lenses at the nanoscale presents a challenge; they are high-aspect-ratio structures that should be rotationally symmetric, well aligned and freestanding, with smooth edges and flat, clean surfaces. In this paper, we present the fabrication results of a non-conventional process, which uses a combination of focused gallium ion-beam milling and hydrofluoric acid vapor etching. This process makes it possible to fabricate nanoscale electrostatic lenses down to 140 nm in aperture diameter and 4.2 µm in column length, with a superior control of the geometry as compared to conventional lithography-based techniques.

  10. NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

    Science.gov (United States)

    This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

  11. Spin transport in nanoscale spin valves and magnetic tunnel junctions

    Science.gov (United States)

    Patibandla, Sridhar

    Spintronics or electronics that utilizes the spin degree of freedom of a single charge carrier (or an ensemble of charge carriers) to store, process, sense or communicate data and information is a rapidly burgeoning field in electronics. In spintronic devices, information is encoded in the spin polarization of a single carrier (or multiple carriers) and the spin(s) of these carrier(s) are manipulated for device operation. This strategy could lead to devices with low power consumption. This dissertation investigates spin transport in one dimensional and two dimensional semiconductors, with a view to applications in spintronic devices. This dissertation is arranged as follows: Chapter 1 gives a detailed introduction and necessary background to understand aspects of spin injection into a semiconductor from a spin polarized source such as a ferromagnet, and spin polarized electron transport in the semiconductor. Chapter 2 discusses the nanoporous alumina technique that is employed to fabricate nanowires and nanowire spin valves for the investigation of spin transport in 1D semiconductors. Chapter 3 investigates the spin transport in quasi one-dimensional spin valves with germanium spacer layer. These spin valves with 50nm in diameter and 1 mum length were fabricated using the porous alumina technique. Spin transport in nanoscale germanium spin valves was demonstrated and the spin relaxation lengths and the spin relaxation times were calculated. Chapter 4 discusses spin transport studies conducted in bulk high purity germanium with a view to comparing spin relaxation mechanisms in low mobility nanowires and high mobility bulk structures. Lateral spin valve with tunnel injectors were employed in this study and the spin transport measurements were conducted at various temperatures. The spin relaxation rates were measured as a function of temperature which allowed us to distinguish between two different mechanisms---D'yakonov-Perel' and Elliott-Yafet---that dominate spin

  12. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  13. Towards a Graphene-Based Low Intensity Photon Counting Photodetector.

    Science.gov (United States)

    Williams, Jamie O D; Alexander-Webber, Jack A; Lapington, Jon S; Roy, Mervyn; Hutchinson, Ian B; Sagade, Abhay A; Martin, Marie-Blandine; Braeuninger-Weimer, Philipp; Cabrero-Vilatela, Andrea; Wang, Ruizhi; De Luca, Andrea; Udrea, Florin; Hofmann, Stephan

    2016-08-23

    Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

  14. Towards a Graphene-Based Low Intensity Photon Counting Photodetector

    Directory of Open Access Journals (Sweden)

    Jamie O. D. Williams

    2016-08-01

    Full Text Available Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

  15. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  16. Long wavelength infrared photodetector design based on electromagnetically induced transparency

    Science.gov (United States)

    Zyaei, M.; Saghai, H. Rasooli; Abbasian, K.; Rostami, A.

    2008-07-01

    A novel long-wavelength infrared (IR) photodetector based on Electromagnetically induced transparency (EIT) which is suitable for operation in about room temperature and THz range is proposed and analyzed in detail in this article. The main point in this paper for operation in room temperature is related to convert the incoming long-wavelength IR signal to short-wavelength or visible probe optical field through EIT phenomena. For realization of the idea, we used 4, 5- and 6-level atoms implemented by quantum wells or dots. In the proposed structure long-wavelength IR signal does not interact directly with electrons, but affects the absorption characteristics of short-wavelength or visible probe optical field. Therefore, the proposed structure reduces and cancels out the important thermionic dark current component. So, the proposed idea can operate as long wavelength photodetector.

  17. Mid-infrared interband cascade photodetectors with high quantum efficiency

    Science.gov (United States)

    Tian, Zhao-Bing; Singh, Anjali; Rigg, Kevin; Krishna, Sanjay

    2016-02-01

    Antimony-based Interband Cascade (IC) photodetectors are emerging as viable candidates for highperformance infrared applications, especially at high operating temperatures. In our previous IC detector designs using InAs/GaSb Type-II superlattices, the quantum efficiency was relatively low as the designs were optimized for high signal to noise ratio. Here we report our recent development of low-noise mid-IR IC photodetectors with high external quantum efficiency. By adopting IC detectors with thicker absorber designs, the quantum efficiency of these mid-IR IC detectors has been increased up to 35%. These IC devices continue to have low-dark current and high temperature operations. Some further analysis on the device characteristics is also presented.

  18. A voltage tunable quantum dot photodetector for terahertz detection

    Energy Technology Data Exchange (ETDEWEB)

    Wu Wei; Dey, Dibyendu; Mohseni, Hooman, E-mail: wwu@u.northwestern.ed, E-mail: hmohseni@ece.northwestern.ed [Bio-inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering and Computer Science, Northwestern University, Evanston IL 60208 (United States)

    2010-04-21

    A voltage tunable quantum dot (QD) photodetector for terahertz detection based on intersublevel transitions is proposed. The intersublevels are formed by the lateral electrical confinement applied on quantum wells and the transitions between them can be strongly tuned by the confinement. Under normal incidence, the peak detection wavelengths can be tuned from {approx}50 to {approx}90 {mu}m (6.0 to {approx}3.3 THz) with a gate voltage range of -5 to -2 V. The peak absorption coefficient of detection is in the order of 10{sup 3} cm{sup -1} at 77 K, and the peak detectivity of the photodetector can reach {approx}10{sup 9} cm{sup 2} Hz{sup 1/2} W{sup -1}. The proposed approach has the advantage of forming a high uniformity of QD effective sizes and provides an alternative way to detect terahertz radiation.

  19. Physics of vertically integrated waveguide photodetectors and amplifiers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Wright, E.M. [Univ. of Arizona, Tucson, AZ (United States). Optical Sciences Center

    1993-11-01

    This report describes the efforts supported by LLNL under the Subcontract No. B239593 at the University of Arizona during the Fiscal Year 1992. A solid physical foundation has been developed for understanding the operation of vertically integrated photodetectors and amplifiers. This has been achieved through a combination of numerical simulation and development of simple coupled-mode theories. Coupled-mode theory has been used to elucidate the physics underlying the operation of vertically integrated photodetectors. In particular, the relation between the spatial transients observed in experiments and numerical simulations, and the non-power orthogonality of the underlying modes has been clarified. The coupled-mode theory has been extended to the case of coupled waveguide-amplifiers.

  20. 基于Pt电极的TiO2紫外探测器研究%Research on TiO2 Ultraviolet Photodetectors with Pt Electrodes

    Institute of Scientific and Technical Information of China (English)

    解天骄; 郭文滨; 阮圣平; 张海峰; 沈亮; 李福民; 刘彩霞

    2012-01-01

    To solve the problems of insensitive response and low degree photoresponse in wide bandgap semiconductor UV(ultraviolet) photodetectors,Pt electrodes with high work function was introduced to TiO2 ultraviolet detectors. TiO2 ultraviolet detectors with Pt electrodes have been fabricated and studied. Nano TiO2 thin films were prepared by sol-gel method,and Pt film was deposited by radio frequency magnetron sputtering directly on the semiconductor films. At 5 V bias,the dark current of the detectors was 4. 5 nA,and the photocurrent was 5. 7 μA under irradiation of 260 nm UV light. High photoresponse of 447 A/W was found under irradiation of 260 nm UV light,which is much higher than those of photodetectors with other electrodes (about 200 A/W). At last,the peripheral circuit was designed and the final UV photodetector was fabricated. Experiments show that the detector successfully solve the problems of traditional wide-bandgap semiconductor ultraviolet detector.%针对宽禁带半导体紫外探测器响应不够灵敏和响应度偏低等问题,将具有高功函数的Pt电极引入TiO2紫外探测器,采用溶胶凝胶法制备了纳米TiO2薄膜.以金属Pt为电极,采用磁控溅射的方法,将Pt电极溅射在TiO2纳米薄膜上,制作了MSM (Metal-Semiconductor-Metal)型紫外探测器件.在5V偏压下,探测器的暗电流为4.5 nA,260 nm波长光照下的光电流为5.7 μA.在260 nm的紫外光照射下,探测器的响应度达到最大值,约为447 A/W,与其他紫外探测器(200 A/W左右)的响应度均值相比有了很大的提升.最后,设计外围电路,制作出功能完整的紫外强度测试仪.实验表明,该探测器成功地解决了传统宽禁带半导体紫外探测器灵敏度及响应度偏低等问题.

  1. Crumpled Graphene Photodetector with Enhanced, Strain-Tunable, and Wavelength-Selective Photoresponsivity.

    Science.gov (United States)

    Kang, Pilgyu; Wang, Michael Cai; Knapp, Peter M; Nam, SungWoo

    2016-06-01

    A stretchable photodetector with enhanced, strain-tunable photoresponsivity is developed based on crumpled graphene by engineering 2D graphene into 3D structures. This crumpled graphene photodetector demonstrates ≈400% enhanced photoresponsivity led by an order-of-magnitude enhanced extinction of graphene and 100% modulation in photoresponsivity with 200% applied strain. Finally, strain-tunable, wavelength-selective photodetection is shown by integrated colloidal photonic crystals-crumpled graphene photodetector devices.

  2. PHOTOELECTROCHEMISTRY AND PHOTOCATALYSIS IN NANOSCALE INORGANIC CHEMICAL SYSTEMS

    Energy Technology Data Exchange (ETDEWEB)

    Thomas E. Mallouk

    2007-05-27

    The goal of our DOE-supported research has been to explore the use of solid state materials as organizing media for, and as active components of, artificial photosynthetic systems. In this work we strive to understand how photoinduced electron and energy transfer reactions occur in the solid state, and to elucidate design principles for using nanoscale inorganic materials in photochemical energy conversion schemes. A unifying theme in this project has been to move beyond the study of simple transient charge separation to integrated chemical systems that can effect permanent charge separation in the form of energy-rich chemicals. This project explored the use of zeolites as organizing media for electron donor-acceptor systems and artificial photosynthetic assemblies. Layer-by-layer synthetic methods were developed using lamellar semiconductors, and multi-step, visible light driven energy/electron transfer cascades were studied by transient specroscopic techniques. By combining molecular photosensitizers with lamellar semiconductors and intercalated catalyst particles, the first non-sacrificial systems for visible light driven hydrogen evolution were developed and studied. Oxygen evolving catalyst particles and semiconductor nanowires were also studied with the goal of achieving photocatalytic water splitting using visible light.

  3. Investigation of graphene applied on near infrared photodetector (Conference Presentation)

    Science.gov (United States)

    Lien, I.-Chun; Chen, Sheng-Hui

    2016-10-01

    The particular Graphene-Germanium-Graphene photodetector (GSG PD) is investigated in this research. Germanium has good absorption coefficient in near infrared such as 850 nm, 1310 nm and 1550 nm which are commonly used in optics communication. Generally, the metal electrode was utilized for photodetector and there were lots of light being loss. In recent years, graphene is found to be a good conductive film. It is a two-dimensional monolayer of sp2-bonded carbon atoms. In cases where synthesized by chemical vapor deposition (CVD), graphene is especially a promising candidate for transparent conductive films (TCFs) due to its exceptional electrical conductivity and high optical transmittance which is almost transparent in the wide wavelength range, especially including near infrared. Therefore, the higher photo current and responsivity of the device can be achieved. In this investigation, interdigitated graphene electrodes are used on the devices with the purposes of a relatively easy process for high-speed devices and a comparable process for the integrated circuit. We used the n-type Germanium as the substrates for the absorption of photodetector and different layers of graphene as the interdigitated electrodes. The interdigitated graphene electrode is prepared by transferred the graphene which is grown by CVD on the substrate first and then pattern by O2 plasma. The most direct method of measuring the photo current is to be incident a laser source by fiber and give a DC bias then using KEITHLEY 2400 Source Meter to measure current from photodetectors. As the result of that, we can calculate the responsivity by formula.

  4. Nanowire piezo-phototronic photodetector: theory and experimental design.

    Science.gov (United States)

    Liu, Ying; Yang, Qing; Zhang, Yan; Yang, Zongyin; Wang, Zhong Lin

    2012-03-15

    The piezo-phototronic effect is about the use of the inner crystal piezoelectric potential to tune/control charge carrier generation, separation, transport and/or recombination in optoelectronic devices. In this paper, a theoretical model for describing the characteristics of a metal-nanowire-metal structured piezo-phototronic photodetector is constructed. Numerical simulations fit well to the experimental results of a CdS and ZnO nanowire based visible and UV detector, respectively.

  5. Rigid, Conjugated Macrocycles for High Performance Organic Photodetectors.

    Science.gov (United States)

    Zhang, Boyuan; Trinh, M Tuan; Fowler, Brandon; Ball, Melissa; Xu, Qizhi; Ng, Fay; Steigerwald, Michael L; Zhu, X-Y; Nuckolls, Colin; Zhong, Yu

    2016-12-21

    Organic photodetectors (OPDs) are attractive for their high optical absorption coefficient, broad wavelength tunability, and compatibility with lightweight and flexible devices. Here we describe a new molecular design that enables high performance organic photodetectors. We use a rigid, conjugated macrocycle as the electron acceptor in devices to obtain high photocurrent and low dark current. We make a direct comparison between the devices made with the macrocyclic acceptor and an acyclic control molecule; we find that the superior performance of the macrocycle originates from its rigid, conjugated, and cyclic structure. The macrocycle's rigid structure reduces the number of charged defects originating from deformed sp(2) carbons and covalent defects from photo/thermoactivation. With this molecular design, we are able to suppress dark current density while retaining high responsivity in an ultrasensitive nonfullerene OPD. Importantly, we achieve a detectivity of ∼10(14) Jones at near zero bias voltage. This is without the need for extra carrier blocking layers commonly employed in fullerene-based devices. Our devices are comparable to the best fullerene-based photodetectors, and the sensitivity at low working voltages (<0.1 V) is a record for nonfullerene OPDs.

  6. An Atomically Layered InSe Avalanche Photodetector.

    Science.gov (United States)

    Lei, Sidong; Wen, Fangfang; Ge, Liehui; Najmaei, Sina; George, Antony; Gong, Yongji; Gao, Weilu; Jin, Zehua; Li, Bo; Lou, Jun; Kono, Junichiro; Vajtai, Robert; Ajayan, Pulickel; Halas, Naomi J

    2015-05-13

    Atomically thin photodetectors based on 2D materials have attracted great interest due to their potential as highly energy-efficient integrated devices. However, photoinduced carrier generation in these media is relatively poor due to low optical absorption, limiting device performance. Current methods for overcoming this problem, such as reducing contact resistances or back gating, tend to increase dark current and suffer slow response times. Here, we realize the avalanche effect in a 2D material-based photodetector and show that avalanche multiplication can greatly enhance the device response of an ultrathin InSe-based photodetector. This is achieved by exploiting the large Schottky barrier formed between InSe and Al electrodes, enabling the application of a large bias voltage. Plasmonic enhancement of the photosensitivity, achieved by patterning arrays of Al nanodisks onto the InSe layer, further improves device efficiency. With an external quantum efficiency approaching 866%, a dark current in the picoamp range, and a fast response time of 87 μs, this atomic layer device exhibits multiple significant advances in overall performance for this class of devices.

  7. Direct Coupling From WGM Resonator Disks to Photodetectors

    Science.gov (United States)

    Savchenkov, Antoliy; Maleki, Lute; Mohageg, Makan; Le, Thanh

    2007-01-01

    Output coupling of light from a whispering- gallery-mode (WGM) optical resonator directly to a photodetector has recently been demonstrated. By directly is meant that the coupling is effected without use of intervening optical components. Heretofore, coupling of light into and out of WGM resonators has been a complex affair involving the use of such optical components as diamond or glass prisms, optical fibers, coated collimators, and/or fiber tapers. Alignment of these components is time-consuming and expensive. To effect direct coupling, one simply mounts a photodetector in direct mechanical contact with a spacer that is, in turn, in direct mechanical contact with a WGM resonator disk. The spacer must have a specified thickness (typically of the order of a wavelength) and an index of refraction lower, by an adequate margin, than the indices of refraction of the photodetector and the WGM resonator disk. This mechanically simple approach makes it possible to obtain an optimum compromise between maximizing optical coupling and maximizing the resonance quality factor (Q).

  8. Bolometric effect in a waveguide-integrated graphene photodetector

    Science.gov (United States)

    Wang, Yubing; Yin, Weihong; Han, Qin; Yang, Xiaohong; Ye, Han; Lv, Qianqian; Yin, Dongdong

    2016-11-01

    Graphene is an alternative material for photodetectors owing to its unique properties. These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes. Unfortunately, due to the low absorption of light, the photoresponsivity of graphene-based photodetectors is usually low, only a few milliamps per watt. In this letter, we fabricate a waveguide-integrated graphene photodetector. A photoresponsivity exceeding 0.11 A·W-1 is obtained which enables most optoelectronic applications. The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect. Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W-1. The absorption coefficient of the device is estimated to be 0.27 dB·μm-1. Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402204), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).

  9. Modeling of the photodetector based on the multilayer graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Haiyue [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Niu, Yanxiong, E-mail: niuyx@buaa.edu.cn [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Yin, Yiheng [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Liu, Shuai [Department of Instrumentation Science and Opto-electronics Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191 (China); Precision Opto-mechatronics Technology Key Laboratory of Education Ministry, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

    2016-07-15

    Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In{sub x}Ga{sub x}As in room temperature.

  10. Optimized photonic crystal design for quantum well infrared photodetectors

    Science.gov (United States)

    Reininger, P.; Kalchmair, S.; Gansch, R.; Andrews, A. M.; Detz, H.; Zederbauer, T.; Ahn, S. I.; Schrenk, W.; Strasser, G.

    2012-06-01

    The performance of quantum well infrared photodetectors (QWIP) can be significantly enhanced combining it with a photonic crystal slab (PCS) resonator. In such a system the chosen PCS mode is designed to coincide with the absorption maximum of the photodetector by adjusting the lattice parameters. However there is a multitude of parameter sets that exhibit the same resonance frequency of the chosen PCS mode. We have investigated how the choice of the PC design can be exploited for a further enhancement of QWIPs. Several sets of lattice parameters that exhibit the chosen PCS mode at the same resonance frequency have been obtained and the finite difference time domain method was used to simulate the absorption spectra of the different PCS. A photonic crystal slab quantum well infrared photodetector with three different photonic crystal lattice designs that exhibit the same resonance frequency of the chosen PCS mode were designed, fabricated and measured. This work shows that the quality factor of a PCS-QWIP and therefore the absorption enhancement can be increased by an optimized PCS design. The improvement is a combined effect of a changed lattice constant, PC normalized radius and normalized slab thickness. An enhancement of the measured photocurrent of more than a factor of two was measured.

  11. Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

    2017-10-01

    A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal–graphene–metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W‑1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W‑1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I–V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

  12. Quantitative evaluation of chemisorption processes on semiconductors

    Science.gov (United States)

    Rothschild, A.; Komem, Y.; Ashkenasy, N.

    2002-12-01

    This article presents a method for numerical computation of the degree of coverage of chemisorbates and the resultant surface band bending as a function of the ambient gas pressure, temperature, and semiconductor doping level. This method enables quantitative evaluation of the effect of chemisorption on the electronic properties of semiconductor surfaces, such as the work function and surface conductivity, which is of great importance for many applications such as solid- state chemical sensors and electro-optical devices. The method is applied for simulating the chemisorption behavior of oxygen on n-type CdS, a process that has been investigated extensively due to its impact on the photoconductive properties of CdS photodetectors. The simulation demonstrates that the chemisorption of adions saturates when the Fermi level becomes aligned with the chemisorption-induced surface states, limiting their coverage to a small fraction of a monolayer. The degree of coverage of chemisorbed adions is proportional to the square root of the doping level, while neutral adsorbates are independent of the doping level. It is shown that the chemisorption of neutral adsorbates behaves according to the well-known Langmuir model, regardless of the existence of charged species on the surface, while charged adions do not obey Langmuir's isotherm. In addition, it is found that in depletive chemisorption processes the resultant surface band bending increases by 2.3kT (where k is the Boltzmann constant and T is the temperature) when the gas pressure increases by one order of magnitude or when the doping level increases by two orders of magnitude.

  13. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    Science.gov (United States)

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  14. Nanoscale wicking methods and devices

    Science.gov (United States)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  15. Fabrication of nanoscale electrostatic lenses

    NARCIS (Netherlands)

    Sinno, I.; Sanz-Velasco, A.; Kang, S.; Jansen, H.; Olsson, E.; Enoksson, P.; Svensson, K.

    2010-01-01

    The fabrication of cylindrical multi-element electrostatic lenses at the nanoscale presents a challenge; they are high-aspect-ratio structures that should be rotationally symmetric, well aligned and freestanding, with smooth edges and flat, clean surfaces. In this paper, we present the fabrication r

  16. IR nanoscale spectroscopy and imaging

    Science.gov (United States)

    Kennedy, Eamonn; Yarrow, Fiona; Rice, James H.

    2011-10-01

    Sub diffraction limited infrared absorption imaging was applied to hemoglobin by coupling IR optics with an atomic force microscope. Comparisons between the AFM topography and IR absorption images of micron sized hemoglobin features are presented, along with nanoscale IR spectroscopic analysis of the metalloprotein.

  17. Integrated nanoscale tools for interrogating living cells

    Science.gov (United States)

    Jorgolli, Marsela

    The development of next-generation, nanoscale technologies that interface biological systems will pave the way towards new understanding of such complex systems. Nanowires -- one-dimensional nanoscale structures -- have shown unique potential as an ideal physical interface to biological systems. Herein, we focus on the development of nanowire-based devices that can enable a wide variety of biological studies. First, we built upon standard nanofabrication techniques to optimize nanowire devices, resulting in perfectly ordered arrays of both opaque (Silicon) and transparent (Silicon dioxide) nanowires with user defined structural profile, densities, and overall patterns, as well as high sample consistency and large scale production. The high-precision and well-controlled fabrication method in conjunction with additional technologies laid the foundation for the generation of highly specialized platforms for imaging, electrochemical interrogation, and molecular biology. Next, we utilized nanowires as the fundamental structure in the development of integrated nanoelectronic platforms to directly interrogate the electrical activity of biological systems. Initially, we generated a scalable intracellular electrode platform based on vertical nanowires that allows for parallel electrical interfacing to multiple mammalian neurons. Our prototype device consisted of 16 individually addressable stimulation/recording sites, each containing an array of 9 electrically active silicon nanowires. We showed that these vertical nanowire electrode arrays could intracellularly record and stimulate neuronal activity in dissociated cultures of rat cortical neurons similar to patch clamp electrodes. In addition, we used our intracellular electrode platform to measure multiple individual synaptic connections, which enables the reconstruction of the functional connectivity maps of neuronal circuits. In order to expand and improve the capability of this functional prototype device we designed

  18. Systematic evaluation of photodetector performance for plastic scintillation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Boivin, Jonathan, E-mail: jonathan.boivin.1@ulaval.ca; Beaulieu, Luc [Département de Physique, de Génie physique et d’Optique, et Centre de recherche sur le cancer, Université Laval, Québec, Québec G1V 0A6, Canada and Département de Radio-Oncologie et Axe oncologie du Centre de recherche du CHU de Québec, CHU de Québec, Québec, Québec G1R 2J6 (Canada); Beddar, Sam [Department of Radiation Physics, University of Texas, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Guillemette, Maxime [Département de Physique, de Génie physique et d’Optique, Université Laval, Québec, Québec G1V 0A6, Canada and Institut Universitaire de Cardiologie et de Pneumologie de Québec, Québec, Québec G1V 4G5 (Canada)

    2015-11-15

    Purpose: The authors’ objective was to systematically assess the performance of seven photodetectors used in plastic scintillation dosimetry. The authors also propose some guidelines for selecting an appropriate detector for a specific application. Methods: The plastic scintillation detector (PSD) consisted of a 1-mm diameter, 10-mm long plastic scintillation fiber (BCF-60), which was optically coupled to a clear 10-m long optical fiber of the same diameter. A light-tight plastic sheath covered both fibers and the scintillator end was sealed. The clear fiber end was connected to one of the following photodetectors: two polychromatic cameras (one with an optical lens and one with a fiber optic taper replacing the lens), a monochromatic camera with an optical lens, a PIN photodiode, an avalanche photodiode (APD), or a photomultiplier tube (PMT). A commercially available W1 PSD was also included in the study, but it relied on its own fiber and scintillator. Each PSD was exposed to both low-energy beams (120, 180, and 220 kVp) from an orthovoltage unit and high-energy beams (6 and 23 MV) from a linear accelerator. Various dose rates were tested to identify the operating range and accuracy of each photodetector. Results: For all photodetectors, the relative uncertainty was less than 5% for dose rates higher than 3 mGy/s. The cameras allowed multiple probes to be used simultaneously, but they are less sensitive to low-light signals. The PIN, APD, and PMT had higher sensitivity, making them more suitable for low dose rate and out-of-field dose monitoring. The relative uncertainty of the PMT was less than 1% at the lowest dose rate achieved (0.10 mGy/s), suggesting that it was optimal for use in live dosimetry. Conclusions: For dose rates higher than 3 mGy/s, the PIN diode is the most effective photodetector in terms of performance/cost ratio. For lower dose rates, such as those seen in interventional radiology or high-gradient radiotherapy, PMTs are the optimal choice.

  19. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  2. Slow Light Semiconductor Laser

    Science.gov (United States)

    2015-02-02

    we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. The views, opinions and/or findings...we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. Further, the large intracavity field...hybrid Si/III- V platforms Abstract The semiconductor laser is the principal light source powering the world-wide optical fiber network . Ever

  3. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  4. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  5. Micro- and nanocrystals of organic semiconductors.

    Science.gov (United States)

    Li, Rongjin; Hu, Wenping; Liu, Yunqi; Zhu, Daoben

    2010-04-20

    Organic semiconductors have attracted wide attention in recent decades, resulting in the rapid development of organic electronics. For example, the solution processibility of organic semiconductors allows researchers to use unconventional deposition methods (such as inkjet printing and stamping) to fabricate large area devices at low cost. The mechanical properties of organic semiconductors also allow for flexible electronics. However, the most distinguishing feature of organic semiconductors is their chemical versatility, which permits the incorporation of functionalities through molecular design. However, key scientific challenges remain before organic electronics technology can advance further, including both the materials' low charge carrier mobility and researchers' limited knowledge of structure-property relationships in organic semiconductors. We expect that high-quality organic single crystals could overcome these challenges: their purity and long-range ordered molecular packing ensure high device performance and facilitate the study of structure-property relationships. Micro- and nanoscale organic crystals could offer practical advantages compared with their larger counterparts. First, growing small crystals conserves materials and saves time. Second, devices based on the smaller crystals could maintain the functional advantages of larger organic single crystals but would avoid the growth of large crystals, leading to the more efficient characterization of organic semiconductors. Third, the effective use of small crystals could allow researchers to integrate these materials into micro- and nanoelectronic devices using a "bottom-up" approach. Finally, unique properties of crystals at micro- and nanometer scale lead to new applications, such as flexible electronics. In this Account, we focus on organic micro- and nanocrystals, including their design, the controllable growth of crystals, and structure-property studies. We have also fabricated devices and

  6. All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

    National Research Council Canada - National Science Library

    Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

    2014-01-01

    High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications...

  7. Performance optimization of a free space optical interconnect system with a metal-semiconductor-metal detector

    Science.gov (United States)

    Al-Ababneh, Nedal; Khader, Ateka

    2011-08-01

    In this paper we study the possibility and the potentiality of using metal semiconductor-metal photodetector (MSM-PD) in three-dimensional parallel free space optical interconnect (FSOI) systems. The signal-to-noise ratio (SNR) and time response are used as performance measures to optimize the geometry of MSM-PD used in FSOI systems. Both SNR and time response are evaluated, analyzed, and their dependence on feature parameters of the MSM-PD, including finger size, spacing, and number of fingers, are considered. Based on the results obtained, we show that the use of MSM-PD in FSOI improves the interconnect speed at a given acceptable SNR.

  8. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  9. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Saveliev, V. E-mail: saveliev@mail.desy.de; Golovin, V

    2000-03-11

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10{sup 5}-10{sup 6}) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  10. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  11. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  12. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Vijay A Singh; Manoj K Harbola; Praveen Pathak

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  13. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  14. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Masaru, K.

    1984-04-20

    A semiconductor laser with enhanced characteristics is patented in which bleaching coatings are generated on the outcoupling mirrors by sputtering alternating coating layers made from A1203 and A10, with high and low indices of refraction.

  15. Monolayer and Few-Layer All-Inorganic Perovskites as a New Family of Two-Dimensional Semiconductors for Printable Optoelectronic Devices.

    Science.gov (United States)

    Song, Jizhong; Xu, Leimeng; Li, Jianhai; Xue, Jie; Dong, Yuhui; Li, Xiaoming; Zeng, Haibo

    2016-06-01

    Printed flexible photodetectors based on 2D inorganic perovskites with atomic thickness show excellent photosensing with fast rise and decay response times. As-synthesized nanosheets can easily be dispersed in various solvents, leading to large-area, crack-free, low-roughness, flexible films after printing. This study demonstrates that all-inorganic perovskite CsPbX3 nanosheets as a new class of 2D semiconductors have huge potential for flexible optoelectronic applications.

  16. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  17. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  18. Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis

    Science.gov (United States)

    Unni, Vineet; Sankara Narayanan, E. M.

    2017-04-01

    This is the first report on the numerical analysis of the performance of nanoscale vertical superjunction structures based on impurity doping and an innovative approach that utilizes the polarisation properties inherent in III–V nitride semiconductors. Such nanoscale vertical polarisation super junction structures can be realized by employing a combination of epitaxial growth along the non-polar crystallographic axes of Wurtzite GaN and nanolithography-based processing techniques. Detailed numerical simulations clearly highlight the limitations of a doping based approach and the advantages of the proposed solution for breaking the unipolar one-dimensional material limits of GaN by orders of magnitude.

  19. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    Science.gov (United States)

    Hossain, Mohammed Imrul

    Intersubband transitions (ISBTs) in the conduction band (CB) of semiconductor multiple quantum wells (QW) have led to devices, like quantum-well infrared photodetectors and quantum cascade lasers (QCL). Due to the complexities related to the valence band (VB), hole ISBTs have not been explored as intensively as their electronic counterparts. Absorption and photoluminescence due to ISBT in the VB have been reported for p-type Si-SiGe QWs but this material system suffers from significant challenges associated with the built-in strain of these lattice mismatched materials. The GaAs/AlGaAs material system is virtually strain-free and quite mature. We are investigating the properties of bound-to-bound inter-valence subband transitions in GaAs QWs with high Al composition barriers for mid-infrared emitters. Hole ISBTs are interesting because the polarization of the light emitted in heavy-to-light hole transitions is not restricted to the perpendicular of the quantum wells (unlike electron ISBTs in the CB due to selection rules), therefore surface emitting QCLs and ultimately vertical-cavity surface emitting devices are possible using these transitions. Moreover the valence-band offset for pure GaAs and AlAs is comparable with the conduction-band offset in the traditional InGaAs/InAlAs lattice matched to InP system. Very recently we have observed strong heavy to light hole absorption and heavy to heavy hole electroluminescence from ridge waveguide structures in the mid infra-red range. We are also investigating dual wavelength mid infra-red QCLs in the InGaAs/InAlAs system lattice matched to InP. This device may be useful in applications like differential absorption lidar where light has to be evaluated and compared at two different frequencies for environmental sensing application. Most approaches to multi-wavelength QCL operation involve the use of heterogeneous cascades. Our design involves a single type of active region, emitting at two widely different wavelengths in

  20. Development of drift-diffusion numerical models of high-speed on-chip photodetectors with heterojunctions

    Science.gov (United States)

    Pisarenko, I. V.; Ryndin, E. A.

    2016-12-01

    In this paper, we consider the issue of research and development of on-chip optoelectronic devices designed for the optical interconnecting of integrated circuit elements. We address the conceptual on-chip optical interconnections based on AIIIBV nanoheterostructure lasers with functionally integrated modulators of optical radiation. According to the estimations, these optoelectronic devices can generate subpicosecond optical pulses. The paper is aimed at the development of numerical models, simulation methods, and specialized software. These aids are intended for the research of physical processes taking place in high-speed heterostructure photodetectors suitable for operation as parts of on-chip optical interconnections together with the lasers-modulators. We propose to utilize the drift-diffusion approximation of the semiclassical approach for the numerical simulation of charge carrier transport and accumulation in semiconductor photosensitive heterostructures. The drift-diffusion numerical simulation technique was developed. This technique is based on the application of the Newton method, implicit difference scheme, and Slotboom drift-diffusion formulation in terms of electron and hole imref exponents and electrostatic potential. We researched p+-Al0.3Ga0.7As/i-GaAs/n+-Al0.3Ga0.7As and metal/n-Al0.3Ga0.7As/n+-GaAs heterostructures. Rise and fall times of the devices being considered are approximately equal and amount to about 1.6 ps for the p-i-n structure and 1.7 ps for the Schottky-barrier photodiode. We concluded that it is reasonable to develop the methods directed at the improvement of photodetector response speed.

  1. A Flexible UV-Vis-NIR Photodetector based on a Perovskite/Conjugated-Polymer Composite.

    Science.gov (United States)

    Chen, Shan; Teng, Changjiu; Zhang, Miao; Li, Yingru; Xie, Dan; Shi, Gaoquan

    2016-07-01

    A lateral photodetector based on the bilayer composite film of a perovskite and a conjugated polymer is reported. It exhibits significantly enhanced responsivity in the UV-vis region and sensitive photoresponse in the near-IR (NIR) region at a low applied voltage. This broadband photodetector also shows excellent mechanical flexibility and improved environmental stability.

  2. Direction-dependent Optical Modes in Nanoscale Silicon Waveguides

    CERN Document Server

    Robinson, Jacob T

    2010-01-01

    On-chip photonic networks have the potential to transmit and route information more efficiently than electronic circuits. Recently, a number of silicon-based optical devices including modulators, buffers, and wavelength converts have been reported. However, a number of technical challenges need to be overcome before these devices can be combined into network-level architectures. In particular, due to the high refractive index contrast between the core and cladding of semiconductor waveguides, nanoscale defects along the waveguide often scatter light into the backward-propagating mode. These reflections could result in unwanted feedback to optical sources or crosstalk in bidirectional interconnects such as those employed in fiber-optic networks. It is often assumed that these reflected waves spatially overlap the forward-propagating waves making it difficult to implement optical circulators or isolators which separate or attenuate light based on its propagation direction. Here, we individually identify and map...

  3. Thermal measurement. Nanoscale temperature mapping in operating microelectronic devices.

    Science.gov (United States)

    Mecklenburg, Matthew; Hubbard, William A; White, E R; Dhall, Rohan; Cronin, Stephen B; Aloni, Shaul; Regan, B C

    2015-02-06

    Modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit's glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope and electron energy loss spectroscopy, we quantified the local density via the energy of aluminum's bulk plasmon. Rescaling density to temperature yields maps with a statistical precision of 3 kelvin/hertz(-1/2), an accuracy of 10%, and nanometer-scale resolution. Many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers. Copyright © 2015, American Association for the Advancement of Science.

  4. Optical antennas as nanoscale resonators

    CERN Document Server

    Agio, Mario

    2011-01-01

    Recent progress in nanotechnology has enabled us to fabricate subwavelength architectures that function as antennas for improving the exchange of optical energy with nanoscale matter. We describe the main features of optical antennas for enhancing quantum emitters and review designs that increase the spontaneous emission rate by orders of magnitude from the ultraviolet up to the near-infrared spectral range. To further explore how optical antennas may lead to unprecedented regimes of light-matter interaction, we draw a relationship between metal nanoparticles, radio-wave antennas and optical resonators. Our analysis points out how optical antennas may function as nanoscale resonators and how these may offer unique opportunities with respect to state-of-the-art microcavities.

  5. Optical antennas as nanoscale resonators.

    Science.gov (United States)

    Agio, Mario

    2012-02-07

    Recent progress in nanotechnology has enabled us to fabricate sub-wavelength architectures that function as antennas for improving the exchange of optical energy with nanoscale matter. We describe the main features of optical antennas for enhancing quantum emitters and review the designs that increase the spontaneous emission rate by orders of magnitude from the ultraviolet up to the near-infrared spectral range. To further explore how optical antennas may lead to unprecedented regimes of light-matter interactions, we draw a relationship between metal nanoparticles, radio-wave antennas and optical resonators. Our analysis points out how optical antennas may function as nanoscale resonators and how these may offer unique opportunities with respect to state-of-the-art microcavities.

  6. Nanoscale deformation mechanisms in bone.

    Science.gov (United States)

    Gupta, Himadri S; Wagermaier, Wolfgang; Zickler, Gerald A; Raz-Ben Aroush, D; Funari, Sérgio S; Roschger, Paul; Wagner, H Daniel; Fratzl, Peter

    2005-10-01

    Deformation mechanisms in bone matrix at the nanoscale control its exceptional mechanical properties, but the detailed nature of these processes is as yet unknown. In situ tensile testing with synchrotron X-ray scattering allowed us to study directly and quantitatively the deformation mechanisms at the nanometer level. We find that bone deformation is not homogeneous but distributed between a tensile deformation of the fibrils and a shearing in the interfibrillar matrix between them.

  7. Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

    Science.gov (United States)

    Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

    2015-01-01

    Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

  8. Hexagonal-like Nb₂O₅ nanoplates-based photodetectors and photocatalyst with high performances.

    Science.gov (United States)

    Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

    2015-01-12

    Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb₂O₅ nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb₂O₅ nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb₂O₅ nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb₂O₅ nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb₂O₅.

  9. Correction of frequency response of infrared photodetector signal path

    Science.gov (United States)

    Opalska, Katarzyna

    2016-09-01

    The paper presents the investigations targeted at broadening the bandwidth of the high speed photodector signal path. Photodetector output signal is formed in the signal path composed of the photodiode with appropriate cooling circuitry, short segment of transmission line and a high-speed amplifier. Bandwidth widening is achieved by including extra circuits in the signal tract (lossless and possibly also lossy one), which - together with inevitable mismatch at both ends of the transmission line - enable correction of the frequency characteristic. The trade-offs between gain, ripples of the AC characteristic and bandwidth are studied and presented in the paper.

  10. Orientation selectivity with organic photodetectors and an organic electrochemical transistor

    Science.gov (United States)

    Gkoupidenis, Paschalis; Rezaei-Mazinani, Shahab; Proctor, Christopher M.; Ismailova, Esma; Malliaras, George G.

    2016-11-01

    Neuroinspired device architectures offer the potential of higher order functionalities in information processing beyond their traditional microelectronic counterparts. Here we demonstrate a neuromorphic function of orientation selectivity, which is inspired from the visual system, with a combination of organic photodetectors and a multi-gated organic electrochemical transistor based on poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The device platform responds preferably to different orientations of light bars, a behaviour that resembles orientation selectivity of visual cortex cells. These results pave the way for organic-based neuromorphic devices with spatially correlated functionalities and potential applications in the area of organic bioelectronics.

  11. GeSn/Ge multiquantum well photodetectors on Si substrates.

    Science.gov (United States)

    Oehme, M; Widmann, D; Kostecki, K; Zaumseil, P; Schwartz, B; Gollhofer, M; Koerner, R; Bechler, S; Kittler, M; Kasper, E; Schulze, J

    2014-08-15

    Vertical incidence GeSn/Ge multiquantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7%. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/Ge MQW was kept constant at 10 nm. The well width was varied between 6 and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs.

  12. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    Photodetectors on Si substrates Report Title In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been...between GeSn and other market dominating IR detectors in short-IR wavelength (First time reported the D* of a GeSn detector in the world). The D* of...Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 Final Report W911NF-13-1-0196 64461-EL-DRP.43 479-575-7265 a. REPORT 14. ABSTRACT 16

  13. ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

    Science.gov (United States)

    Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

    2017-03-27

    Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10(4)), specific detectivity (up to 9.0 × 10(17) Jones), photoconductive gain (up to 1.1 × 10(7)), fast response, and excellent stability. Compared with a pristine Zn2SnO4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn2SnO4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn2SnO4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

  14. Nanoscale rippling on polymer surfaces induced by AFM manipulation.

    Science.gov (United States)

    D'Acunto, Mario; Dinelli, Franco; Pingue, Pasqualantonio

    2015-01-01

    Nanoscale rippling induced by an atomic force microscope (AFM) tip can be observed after performing one or many scans over the same area on a range of materials, namely ionic salts, metals, and semiconductors. However, it is for the case of polymer films that this phenomenon has been widely explored and studied. Due to the possibility of varying and controlling various parameters, this phenomenon has recently gained a great interest for some technological applications. The advent of AFM cantilevers with integrated heaters has promoted further advances in the field. An alternative method to heating up the tip is based on solvent-assisted viscoplastic deformations, where the ripples develop upon the application of a relatively low force to a solvent-rich film. An ensemble of AFM-based procedures can thus produce nanoripples on polymeric surfaces quickly, efficiently, and with an unprecedented order and control. However, even if nanorippling has been observed in various distinct modes and many theoretical models have been since proposed, a full understanding of this phenomenon is still far from being achieved. This review aims at summarizing the current state of the art in the perspective of achieving control over the rippling process on polymers at a nanoscale level.

  15. Fast, Large-Area, Wide-Bandgap UV Photodetector for Cherenkov Light Detection

    Science.gov (United States)

    Wrbanek, John D.; Wrbanek, Susan Y.

    2013-01-01

    Due to limited resources available for power and space for payloads, miniaturizing and integrating instrumentation is a high priority for addressing the challenges of manned and unmanned deep space missions to high Earth orbit (HEO), near Earth objects (NEOs), Lunar and Martian orbits and surfaces, and outer planetary systems, as well as improvements to high-altitude aircraft safety. New, robust, and compact detectors allow future instrumentation packages more options in satisfying specific mission goals. A solid-state ultraviolet (UV) detector was developed with a theoretical fast response time and large detection area intended for application to Cherenkov detectors. The detector is based on the wide-bandgap semiconductor zinc oxide (ZnO), which in a bridge circuit can detect small, fast pulses of UV light like those required for Cherenkov detectors. The goal is to replace the role of photomultiplier tubes in Cherenkov detectors with these solid-state devices, saving on size, weight, and required power. For improving detection geometry, a spherical detector to measure high atomic number and energy (HZE) ions from any direction has been patented as part of a larger space radiation detector system. The detector will require the development of solid-state UV photodetectors fast enough (2 ns response time or better) to detect the shockwave of Cherenkov light emitted as the ions pass through a quartz, sapphire, or acrylic ball. The detector must be small enough to fit in the detector system structure, but have an active area large enough to capture enough Cherenkov light from the sphere. The detector is fabricated on bulk single-crystal undoped ZnO. Inter - digitated finger electrodes and contact pads are patterned via photolithography, and formed by sputtered metal of silver, platinum, or other high-conductivity metal.

  16. Design and development of SiGe based near-infrared photodetectors

    Science.gov (United States)

    Zeller, John W.; Puri, Yash R.; Sood, Ashok K.; McMahon, Shane; Efsthadiatis, Harry; Haldar, Pradeep; Dhar, Nibir K.

    2014-10-01

    Near-infrared (NIR) sensors operating at room temperatures are critical for a variety of commercial and military applications including detecting mortar fire and muzzle flashes. SiGe technology offers a low-cost alternative to conventional IR sensor technologies such as InGaAs, InSb, and HgCdTe for developing NIR micro-sensors that will not require any cooling and can operate with high bandwidths and comparatively low dark currents. Since Ge has a larger thermal expansion coefficient than Si, tensile strain may be incorporated into detector devices during the growth process, enabling an extended operating wavelength range above 1600 nm. SiGe based pin photodetectors have advantages of high stability, low noise, and high responsivity compared to metal-semiconductor-metal (MSM) devices. We have developed a process flow and are fabricating SiGe detector devices on 12" (300 mm) silicon wafers in order to take advantage of high throughput, large-area leading-edge silicon based CMOS technology that provides small feature sizes with associated device cost/density scaling advantages. The fabrication of the detector devices is facilitated by a two-step growth process incorporating initial low temperature growth of Ge/SiGe to form a thin strain-relaxed layer, followed by high temperature growth to deposit a thicker absorbing film, and subsequent high temperature anneal. This growth process is designed to effectively reduce dark current and enhance detector performance by reducing the number of defects and threading dislocations which form recombination centers during the growth process. Various characterization techniques have been employed to determine the properties of the epitaxially deposited Ge/SiGe layers, and the corresponding results are discussed.

  17. Bending effects on lasing action of semiconductor nanowires.

    Science.gov (United States)

    Yang, Weisong; Ma, Yaoguang; Wang, Yipei; Meng, Chao; Wu, Xiaoqin; Ye, Yu; Dai, Lun; Tong, Limin; Liu, Xu; Yang, Qing

    2013-01-28

    High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits. We investigate the bending effects on lasing action of CdSe NWs. Threshold increases and differential efficiency decreases gradually when we decrease the bending radius step by step. Red shift and mode reduction in the output spectra are also observed. The bending loss of laser oscillation is considerably larger than that of photoluminescence (PL), and both show the exponential relationship with the bending radius. Diameter and mode dependent bending losses are investigated. Furthermore, the polarizations of output can be modulated linearly by bending the NWs into different angles continuously.

  18. Method of doping a semiconductor

    Science.gov (United States)

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  19. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    Directory of Open Access Journals (Sweden)

    Shen Guozhen

    2009-01-01

    Full Text Available Abstract The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  20. Center for Nanoscale Science and Technology

    Science.gov (United States)

    NIST Center for Nanoscale Science and Technology (Program website, free access)   Currently there is no database matching your keyword search, but the NIST Center for Nanoscale Science and Technology website may be of interest. The Center for Nanoscale Science and Technology enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.

  1. Self-powered sensitive and stable UV-visible photodetector based on GdNiO3/Nb-doped SrTiO3 heterojunctions

    Science.gov (United States)

    Wang, Le; Chang, Lei; Yin, Xinmao; You, Lu; Zhao, Jia-Li; Guo, Haizhong; Jin, Kuijuan; Ibrahim, Kurash; Wang, Jiaou; Rusydi, Andrivo; Wang, Junling

    2017-01-01

    The properties of perovskite nickelates are very sensitive to their oxygen content, which allows us to tune their electronic structures by varying the oxygen partial pressure during film deposition. Under the optimized condition, we have obtained GdNiO3 films that are sensitive to a wide spectrum of light. By combining the GdNiO3 film with Nb-doped SrTiO3 to form a heterojunction, we design a self-powered photodetector with high sensitivity toward light with a wavelength between 650 nm and 365 nm. Under 365 nm illumination (50 μW/cm2), the device shows a responsivity of 0.23 A/W at 0 V bias, comparable to or even better than the ultraviolet photodetectors made of semiconductor materials such as GaN or ZnO. The photo-dark ratio can be close to 103 when the power light density reaches 0.6 mW/cm2. Moreover, the device performance is very stable without any decay after 6 months.

  2. Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect.

    Science.gov (United States)

    Shen, Yanwei; Yan, Xiaoqin; Si, Haonan; Lin, Pei; Liu, Yichong; Sun, Yihui; Zhang, Yue

    2016-03-09

    Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

  3. Generalized colloidal synthesis of high-quality, two-dimensional cesium lead halide perovskite nanosheets and their applications in photodetectors

    Science.gov (United States)

    Lv, Longfei; Xu, Yibing; Fang, Hehai; Luo, Wenjin; Xu, Fangjie; Liu, Limin; Wang, Biwei; Zhang, Xianfeng; Yang, Dong; Hu, Weida; Dong, Angang

    2016-07-01

    All-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, and I) nanocrystals (NCs) are emerging as an important class of semiconductor materials with superior photophysical properties and wide potential applications in optoelectronic devices. So far, only a few studies have been conducted to control the shape and geometry of CsPbX3 NCs. Here we report a general approach to directly synthesize two-dimensional (2D) CsPbX3 perovskite and mixed perovskite nanosheets with uniform and ultrathin thicknesses down to a few monolayers. The key to the high-yield synthesis of perovskite nanosheets is the development of a new Cs-oleate precursor. The as-synthesized CsPbX3 nanosheets exhibit bright photoluminescence with broad wavelength tunability by composition modulation. The excellent optoelectronic properties of CsPbX3 nanosheets combined with their unique 2D geometry and large lateral dimensions make them ideal building blocks for building functional devices. To demonstrate their potential applications in optoelectronics, photodetectors based on CsPbBr3 nanosheets are fabricated, which exhibit high on/off ratios with a fast response time.All-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, and I) nanocrystals (NCs) are emerging as an important class of semiconductor materials with superior photophysical properties and wide potential applications in optoelectronic devices. So far, only a few studies have been conducted to control the shape and geometry of CsPbX3 NCs. Here we report a general approach to directly synthesize two-dimensional (2D) CsPbX3 perovskite and mixed perovskite nanosheets with uniform and ultrathin thicknesses down to a few monolayers. The key to the high-yield synthesis of perovskite nanosheets is the development of a new Cs-oleate precursor. The as-synthesized CsPbX3 nanosheets exhibit bright photoluminescence with broad wavelength tunability by composition modulation. The excellent optoelectronic properties of CsPbX3 nanosheets

  4. Quantifying dissipative contributions in nanoscale interactions.

    Science.gov (United States)

    Santos, Sergio; Gadelrab, Karim R; Souier, Tewfik; Stefancich, Marco; Chiesa, Matteo

    2012-02-01

    Imaging with nanoscale resolution has become routine practice with the use of scanning probe techniques. Nevertheless, quantification of material properties and processes has been hampered by the complexity of the tip-surface interaction and the dependency of the dynamics on operational parameters. Here, we propose a framework for the quantification of the coefficients of viscoelasticity, surface energy, surface energy hysteresis and elastic modulus. Quantification of these parameters at the nanoscale will provide a firm ground to the understanding and modelling of tribology and nanoscale sciences with true nanoscale resolution.

  5. Fine grain tungsten produced with nanoscale powder

    Institute of Scientific and Technical Information of China (English)

    Tao Lin; Fang Zhao; Liying Zhang; Chengyi Wu; Zhimeng Guo

    2005-01-01

    Nanoscale tungsten powder was prepared by reducing nanoscale tungsten trioxide in hydrogen to WO2.90 and further to W powder. After compacted with a rubber die, the nanoscale tungsten powder was sintered in a high-temperature dilatometer to investigate its shrinkage process. The results show that the compact of the nanoscale tungsten powder starts to shrink at 1050℃ and ends at 1500℃. The shrinkage rate reaches the maximum value at 1210℃. The relative density of sintered samples is 96.4%, and its grain size is about 5.8 μm.

  6. ``N'' structure for type-II superlattice photodetectors

    Science.gov (United States)

    Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Ergun, Yuksel; Aydinli, Atilla

    2012-08-01

    In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Unlike the symmetrical insertion of AlSb into GaSb layers, N design aims to exploit the shifting of the electron and hole wavefunctions under reverse bias. With cutoff wavelength of 4.3 μm at 77 K, temperature dependent dark current and detectivity measurements show that the dark current density is 3.6 × 10-9 A/cm2, under zero bias. Photodetector reaches background limited infrared photodetection (BLIP) condition at 125 K with the BLIP detectivity (D*BLIP) of 2.6 × 1010 Jones under 300 K background and -0.3 V bias voltage.

  7. Characterization of time resolved photodetector systems for Positron Emission Tomography

    CERN Document Server

    Powolny, François

    The main topic of this work is the study of detector systems composed of a scintillator, a photodetector and readout electronics, for Positron Emission Tomography (PET). In particular, the timing properties of such detector systems are studied. The first idea is to take advantage of the good timing properties of the NINO chip, which is a fast preamplifier-discriminator developed for the ALICE Time of flight detector at CERN. This chip uses a time over threshold technique that is to be applied for the first time in medical imaging applications. A unique feature of this technique is that it delivers both timing and energy information with a single digital pulse, the time stamp with the rising edge and the energy from the pulse width. This entails substantial simplification of the entire readout architecture of a tomograph. The scintillator chosen in the detector system is LSO. Crystals of 2x2x10mm3 were used. For the photodetector, APDs were first used, and were then replaced by SiPMs to make use of their highe...

  8. Compact, Low-power and Precision Timing Photodetector Readout

    Energy Technology Data Exchange (ETDEWEB)

    Varner, Gary S.; Ruckman, Larry L.; /Hawaii U.; Schwiening, Jochen; Vavra, Jaroslav; /SLAC

    2011-06-14

    Photodetector readout for next generation high event rate particle identification and single-photon detection requires a digitizer capable of integrated recording of dense arrays of sensor elements with high analog bandwidth (precision timing) and large record depth, in a cost-effective, compact and low-power way. Simply stated, one cannot do better than having a high-fidelity 'oscilloscope on a chip' for every sensor channel. A firs version of the Buffered Large Analog Bandwidth (BLAB1) ASIC has been designed based upon the lessons learned from the development of the Large Analog Bandwidth Recorder and Digitizer with Ordered Readout (LABRADOR) ASIC. While this LABRADOR ASIC has been very successful and forms the readout basis of a generation of new, large-scale radio neutrino detectors, its limited sampling depth is a major drawback. To address this shortcoming, a prototype intended for photodetector readout has been designed and fabricated with 64k deep sampling at multi-GSa/s operation. An evaluation system has been constructed for instrumentation of Time-Of-Propagation (TOP) and focusing DIRC prototypes and test results will be reported.

  9. Progress on the development of interband cascade photodetectors

    Science.gov (United States)

    Tian, Z.-B.; Krishna, S.

    2015-06-01

    The InAs/GaSb type-II superlattice (T2-SL) based interband cascade (IC) photodetectors are emerging as a promising candidate for high performance infrared (IR) detectors, particularly for high operating temperature applications. In this paper, we present our latest progress on the development of high performance IC photodetectors in both mid- and longwave-IR. Our results show significant improvement in both the electrical and optical performance for the IC detectors. The mid-IR detectors show zero-bias operation, with external quantum efficiency as high as 11%. The dark current is 1.75 nA/cm2 at 120 K and -10mV, which shows over 5 times improvement over our previous best results. The Johnson-limited D( of the mid-IR detector is around 1.20×1011 Jones at 200 K, showing more than 10 times improvement over a wide temperature range. These mid-IR IC detectors have obtained background limited operation up to 210 K. Progress in longwave-IR IC detectors is also presented, which also demonstrates excellent electrical performance.

  10. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  11. Beyond amorphous organic semiconductors

    Science.gov (United States)

    Hanna, Jun-ichi

    2003-07-01

    Recently it has been discovered that some types of liquid crystals, which believed to be governed by ionic conduction, exhibit a very fast electronic conduction. Their charge carrier transport is characterized by high mobility over 10-2 cm2/Vs independent of electric field and temperature. Now, the liquid crystals are being recognized as a new class of organic semiconductors. In this article, a new aspect of liquid crystals as a self-organizing molecular semiconductor are reviewed, focused on their basic charge carrier transport properties and discussed in comparison with those of molecular crystals and amorphous materials. And it is concluded that the liquid crystal is promising as a quality organic semiconductor for the devices that require a high mobility.

  12. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  13. Semiconductors for organic transistors

    Directory of Open Access Journals (Sweden)

    Antonio Facchetti

    2007-03-01

    Full Text Available Organic molecules/polymers with a π-conjugated (heteroaromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. However, organic chemistry offers tools for tailoring materials' functional properties via modifications of the molecular/monomeric units, opening new possibilities for inexpensive device manufacturing. This article reviews the fundamental aspects behind the structural design/realization of p- (hole transporting and n-channel (electron-transporting semiconductors for organic field-effect transistors (OFETs. An introduction to OFET principles and history, as well as of the state-of-the-art organic semiconductor structure and performance of OFETs is provided.

  14. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  15. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  16. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  17. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector.

    Science.gov (United States)

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-01-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetectors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale.

  18. High performance photodetector based on 2D CH3NH3PbI3 perovskite nanosheets

    Science.gov (United States)

    Li, Pengfei; Shivananju, B. N.; Zhang, Yupeng; Li, Shaojuan; Bao, Qiaoliang

    2017-03-01

    In this work, a high performance vertical-type photodetector based on two-dimensional (2D) CH3NH3PbI3 perovskite nanosheets was fabricated. The low trap density of the perovskite nanosheets and their short carrier diffusion distance result in a significant performance enhancement of the perovskite-based photodetector. The photoresponsivity of this vertical-type photodetector is as high as 36 mA W‑1 at visible wavelength, which is much better than traditional perovskite photodetectors (0.34 mA W‑1). Compared with traditional planar-type perovskite-based photodetectors, this vertical-type photodetector also shows the advantages of low-voltage operation and large responsivity. These results may pave the way for exploiting high performance perovskite-based photodetectors with an ingenious device design.

  19. Molecular and Nanoscale Engineering of High Efficiency Excitonic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Jenekhe, Samson A. [Univ. of Washington, Seattle, WA (United States); Ginger, David S. [Univ. of Washington, Seattle, WA (United States); Cao, Guozhong [Univ. of Washington, Seattle, WA (United States)

    2016-01-15

    We combined the synthesis of new polymers and organic-inorganic hybrid materials with new experimental characterization tools to investigate bulk heterojunction (BHJ) polymer solar cells and hybrid organic-inorganic solar cells during the 2007-2010 period (phase I) of this project. We showed that the bulk morphology of polymer/fullerene blend solar cells could be controlled by using either self-assembled polymer semiconductor nanowires or diblock poly(3-alkylthiophenes) as the light-absorbing and hole transport component. We developed new characterization tools in-house, including photoinduced absorption (PIA) spectroscopy, time-resolved electrostatic force microscopy (TR-EFM) and conductive and photoconductive atomic force microscopy (c-AFM and pc-AFM), and used them to investigate charge transfer and recombination dynamics in polymer/fullerene BHJ solar cells, hybrid polymer-nanocrystal (PbSe) devices, and dye-sensitized solar cells (DSSCs); we thus showed in detail how the bulk photovoltaic properties are connected to the nanoscale structure of the BHJ polymer solar cells. We created various oxide semiconductor (ZnO, TiO2) nanostructures by solution processing routes, including hierarchical aggregates and nanorods/nanotubes, and showed that the nanostructured photoanodes resulted in substantially enhanced light-harvesting and charge transport, leading to enhanced power conversion efficiency of dye-sensitized solar cells.

  20. Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

    Science.gov (United States)

    Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi-See

    2017-09-05

    Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) attract much attention recently. Here natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions and it also facilitates the investigation of photoelectrons and photovoltaic effects at the nanoscale. As for applications, the heterojunction device shows simultaneously high on/off ratio of n- and p-type field-effect transistors, gatable p-n junction diodes, tri-state buffer device, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role of p-n heterojunction playing on the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists to increase photocurrents and to enhance photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvest.

  1. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  2. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  3. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  4. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  5. Quantum Transport in Semiconductors

    Science.gov (United States)

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  6. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  7. Single semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Michler, Peter (ed.) [Stuttgart Univ. (Germany). Inst. fuer Halbleiteroptik und Funktionelle Grenzflaechen

    2009-07-01

    This book reviews recent advances in the exciting and rapidly growing field of semiconductor quantum dots via contributions from some of the most prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots due to their potential applications in devices operating with single electron spins and/or single photons. This includes single and coupled quantum dots in external fields, cavity-quantum electrodynamics, and single and entangled photon pair generation. Single Semiconductor Quantum Dots also addresses growth techniques to allow for a positioned nucleation of dots as well as applications of quantum dots in quantum information technologies. (orig.)

  8. Engineering magnetism in semiconductors

    Directory of Open Access Journals (Sweden)

    Tomasz Dietl

    2006-11-01

    Full Text Available Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

  9. Semiconductor surface protection material

    Science.gov (United States)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  10. One-step fabrication of single-crystalline ZnS nanotubes with a novel hollow structure and large surface area for photodetector devices

    Science.gov (United States)

    An, Qinwei; Meng, Xianquan; Xiong, Ke; Qiu, Yunlei; Lin, Weihua

    2017-03-01

    ZnS nanotubes (NTs) were successfully prepared via a one-step thermal evaporation process without using any templates. The resulting NTs were single crystalline and structurally uniform. Based on experimental analysis, a tube-growth vapor–liquid–solid process was proposed as the growth mechanism of ZnS NTs. A metal–semiconductor–metal full-nanostructured ultraviolet (UV) photodetector with ZnS NTs as the active layer, and Ag nanowires of low resistivity and high transmissivity as electrodes, was fabricated and characterized. The ZnS NT-based device displayed a high I on/I off ratio of up to ∼1.56 × 105 with a high response to UV incident light at low operation voltage. This work is a meaningful exploration for preparing other one-dimensional semiconductor NTs, and developing a high-performance and power-saving UV sensor.

  11. Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang and Nancy Ryan Gray

    2009-09-16

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

  12. Nanoscale Properties of Boric Acid

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanoscale properties of boric acid were studied by using atomic force microscopy (AFM) and nanome-chanical testing system. XPS was used to research on the transform behaviors of H3BO3 at different temperatures.The crystal structure, surface morphology, and mechanical properties of H3BO3 were described. The results showthat H3BO3 has layered structure, and can be transformed to boron oxide at high temperature. In addition there area lot of defects in H3BO3 crystal.

  13. Synthesis of nanoscale antimony particles

    Energy Technology Data Exchange (ETDEWEB)

    Balan, L.; Dailly, A. [Universite Henri Poincare Nancy I, Laboratoire de Chimie du Solide Mineral, UMR 7555 CNRS (France); Schneider, R. [Universite Henri Poincare Nancy I, Laboratoire de Synthese organometallique et Reactivite, UMR 7565 CNRS (France); Billaud, D., E-mail: Denis.Billaud@lcsm.uhp-nancy.fr [Universite Henri Poincare Nancy I, Laboratoire de Chimie du Solide Mineral, UMR 7555 CNRS (France); Willmann, P. [Centre National d' Etudes Spatiales, (France); Olivier-Fourcade, J.; Jumas, J.-C. [Universite Montpellier, Laboratoire des Agregats Moleculaires et Materiaux Inorganiques, UMR 5072 CNRS (France)

    2005-09-15

    For the search of new negative electrodes of Li-ion batteries, a low-temperature method has been developed for the preparation of nanoscale antimony particles which uses an alkoxide-activated sodium hydride as reducing agent of antimony pentachloride. X-ray diffraction and TEM studies confirm the obtaining of amorphous Sb nanoparticles dispersed in an organic matrix. {sup 121}Sb Moessbauer spectroscopy gives evidence for the occurrence of interactions between antimony and the matrix. These interactions are modified by the washing treatments.

  14. Spin manipulation in nanoscale superconductors.

    Science.gov (United States)

    Beckmann, D

    2016-04-27

    The interplay of superconductivity and magnetism in nanoscale structures has attracted considerable attention in recent years due to the exciting new physics created by the competition of these antagonistic ordering phenomena, and the prospect of exploiting this competition for superconducting spintronics devices. While much of the attention is focused on spin-polarized supercurrents created by the triplet proximity effect, the recent discovery of long range quasiparticle spin transport in high-field superconductors has rekindled interest in spin-dependent nonequilibrium properties of superconductors. In this review, the experimental situation on nonequilibrium spin injection into superconductors is discussed, and open questions and possible future directions of the field are outlined.

  15. Surface Chemistry in Nanoscale Materials

    Directory of Open Access Journals (Sweden)

    Alex V. Hamza

    2009-12-01

    Full Text Available Although surfaces or, more precisely, the surface atomic and electronic structure, determine the way materials interact with their environment, the influence of surface chemistry on the bulk of the material is generally considered to be small. However, in the case of high surface area materials such as nanoporous solids, surface properties can start to dominate the overall material behavior. This allows one to create new materials with physical and chemical properties that are no longer determined by the bulk material, but by their nanoscale architectures. Here, we discuss several examples, ranging from nanoporous gold to surface engineered carbon aerogels that demonstrate the tuneability of nanoporous solids for sustainable energy applications.

  16. Electron turbulence at nanoscale junctions.

    Science.gov (United States)

    Bushong, Neil; Gamble, John; Di Ventra, Massimiliano

    2007-06-01

    Electron transport through a nanostructure can be characterized in part using concepts from classical fluid dynamics. It is thus natural to ask how far the analogy can be taken and whether the electron liquid can exhibit nonlinear dynamical effects such as turbulence. Here we present an ab initio study of the electron dynamics in nanojunctions which reveals that the latter indeed exhibits behavior quite similar to that of a classical fluid. In particular, we find that a transition from laminar to turbulent flow occurs with increasing current, corresponding to increasing Reynolds numbers. These results reveal unexpected features of electron dynamics and shed new light on our understanding of transport properties of nanoscale systems.

  17. Nanoscale tomography in materials science

    Directory of Open Access Journals (Sweden)

    Günter Möbus

    2007-12-01

    Full Text Available In materials science, various techniques for three-dimensional reconstruction of microstructures have been applied successfully for decades, such as X-ray tomography and mechanical sectioning. However, in the last decade the family tree of methods has grown significantly. This is partly through advances in instrumentation. The introduction of the focused ion beam microscope and the transformation of transmission electron microscopy into a multipurpose analytical and structural tool have made major impacts. The main driving force for progress is perhaps the advent of nanotechnology with the need to achieve nanometer-scale resolution and the desire to get a real three-dimensional view of the nanoscale world.

  18. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    Science.gov (United States)

    Sah, Vasu R; Baier, Robert E

    2014-06-24

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  19. Electroless silver plating of the surface of organic semiconductors.

    Science.gov (United States)

    Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

    2011-10-04

    The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor.

  20. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...