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Sample records for nanorod heterostructures mg-doped

  1. Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.

    Science.gov (United States)

    Hong, Young Joon; Kim, Yong-Jin; Jeon, Jong-Myeong; Kim, Miyoung; Choi, Jun Hee; Baik, Chan Wook; Kim, Sun Il; Park, Sung Soo; Kim, Jong Min; Yi, Gyu-Chul

    2011-05-20

    We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.

  2. Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Young Joon; Kim, Yong-Jin [Department of Materials Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784 (Korea, Republic of); Jeon, Jong-Myeong; Kim, Miyoung; Choi, Jun Hee [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Baik, Chan Wook; Kim, Sun Il; Park, Sung Soo; Kim, Jong Min [Frontier Research Laboratory, Samsung Advanced Institute of Technology, PO Box 111, Kiheung 446-712 (Korea, Republic of); Yi, Gyu-Chul, E-mail: joonie.choi@samsung.com, E-mail: gcyi@snu.ac.kr [National Creative Research Initiative Center for Semiconductor Nanorods, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2011-05-20

    We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.

  3. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Science.gov (United States)

    Hortelano, V.; Martínez, O.; Cuscó, R.; Artús, L.; Jiménez, J.

    2016-03-01

    Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

  4. Synthesis and Characterization of Mg-doped ZnO Nanorods for Biomedical Applications

    Science.gov (United States)

    Gemar, H.; Das, N. C.; Wanekaya, A.; Delong, R.; Ghosh, K.

    2013-03-01

    Nanomaterials research has become a major attraction in the field of advanced materials research in the area of Physics, Chemistry, and Materials Science. Bio-compatible and chemically stable metal nanoparticles have biomedical applications that includes drug delivery, cell and DNA separation, gene cloning, magnetic resonance imaging (MRI). This research is aimed at the fabrication and characterization of Mg-doped ZnO nanorods. Hydrothermal synthesis of undoped ZnO and Mg-doped ZnO nanorods is carried out using aqueous solutions of Zn(NO3)2 .6H2O, MgSO4, and using NH4OH as hydrolytic catalyst. Nanomaterials of different sizes and shapes were synthesized by varying the process parameters such as molarity (0.15M, 0.3M, 0.5M) and pH (8-11) of the precursors, growth temperature (130°C), and annealing time during the hydrothermal Process. Structural, morphological, and optical properties are studied using various techniques such as XRD, SEM, UV-vis and PL spectroscopy. Detailed structural, and optical properties will be discussed in this presentation. This work is partially supported by National Cancer Institute (1 R15 CA139390-01).

  5. Synthesis and photoluminescence properties of comb-like CdS nanobelt/ZnO nanorod heterostructures

    International Nuclear Information System (INIS)

    Lan Changyong; Gong Jiangfeng; Liu Chunming

    2012-01-01

    Highlights: ► Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized. ► ZnO nanorods epitaxially grew on the (1 0 0) surface of the CdS nanobelts along [1 0 0]. ► A preliminary growth mechanism was proposed. - Abstract: Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized by a two-stage method. X-ray diffractometer, scanning electron microscopy, transmission electron microscopy were used to characterize and analyze the as-synthesized products. The results demonstrate that the CdS nanobelt backbones grow along [2 1 0] and the ZnO nanorod branches epitaxially grow on the (0 0 1) surface of the CdS nanobelt with a growth direction of [0 0 1]. The as-prepared heterostructures exhibit an important feature of single-crystallinity. At room temperature, the comb-like CdS nanobelt/ZnO nanorod heterostructures show strong green emission.

  6. Improving photoelectrochemical performance by building Fe{sub 2}O{sub 3} heterostructure on TiO{sub 2} nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Chunlan [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Key Laboratory of Special Power Supply, Chongqing Communication Institute, Chongqing 400035 (China); Hu, Chenguo, E-mail: hucg@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Shen, Weidong [Key Laboratory of Special Power Supply, Chongqing Communication Institute, Chongqing 400035 (China); Wang, Shuxia, E-mail: wangshuxia@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Song, Sihong [Key Laboratory of Special Power Supply, Chongqing Communication Institute, Chongqing 400035 (China); Wang, Mingjun [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2015-10-15

    Highlights: • Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure was fabricated by two-step method. • The photoelectrochemical properties were studied upon visible light irradiation. • Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure shows superior photoelectrochemical property. • A possible mechanism for enhanced photoelectrochemical property was put forward. - Abstract: Fe{sub 2}O{sub 3}@TiO{sub 2} heterostructure nanorod arrays were synthesized on a fluorine-doped tin oxide conductive (FTO) glass substrate via two-step method for improving photoelectrochemical activity of TiO{sub 2}. The TiO{sub 2} nanorod arrays on FTO substrate were first prepared by hydrothermal method and then Fe{sub 2}O{sub 3} nanoparticles were coated onto the surface of TiO{sub 2} nanorod arrays through chemical bath deposition. The heterojunction yielded a photocurrent density of 39.75 μA cm{sup −2} at a bias potential of 0 V (vs. Ag/AgCl) under visible light irradiation, which is 2.2 times as much as that produced by the pure TiO{sub 2} nanorod arrays. The enhanced photoelectrochemical activity is attributed to the extension of the light response range and efficient separation of photogenerated carriers. Our results have demonstrated the advantage of the novel Fe{sub 2}O{sub 3}@TiO{sub 2} heterojunction and will provide a new path to the fabrication of heterostructural materials.

  7. Vertically aligned ZnO@CdS nanorod heterostructures for visible light photoinactivation of bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Zirak, M. [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Akhavan, O., E-mail: oakhavan@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 14588-89694, Tehran (Iran, Islamic Republic of); Moradlou, O. [Department of Chemistry, Faculty of Sciences, Alzahra University, P.O. Box 1993893973, Tehran (Iran, Islamic Republic of); Nien, Y.T. [Department of Materials Science and Engineering, National Formosa University, Huwei District, Taiwan (China); Moshfegh, A.Z. [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 14588-89694, Tehran (Iran, Islamic Republic of)

    2014-03-25

    Highlights: • Synthesis of vertically aligned ZnO@CdS nanorod heterostructures. • Effective antibacterial application of the ZnO@CdS nanorods under visible light irradiation. • Determination of the optimum loading of CdS on the ZnO nanorods in the antibacterial application. -- Abstract: Vertically aligned ZnO@CdS nanorod heterostructure films with various loadings of CdS nanoparticle shell were synthesized and applied in photoinactivation of Escherichia coli bacteria under visible light irradiation. While neither the bare ZnO nanorods (with band-gap energy (E{sub g}) of ∼3.28 eV) under visible light irradiation nor the nanorod heterostructures in dark exhibited any significant antibacterial activity, the ZnO@CdS nanorod heterostructures (with E{sub g} ∼2.5–2.6 eV) could successfully inactivate the bacteria under visible light irradiation. Furthermore, it was found that an optimum loading of the CdS shell (corresponding to the effective thickness less than ∼15 nm) is required to achieve a complete inactivation of the bacteria after 24 h visible light irradiation at room temperature. Using X-ray photoelectron spectroscopy, the lower photoinactivation efficiencies of the ZnO@CdS nanorod heterostructure at CdS thicknesses lower and higher than the optimum one were assigned to lower amounts of CdS nanoparticles and OH bonds (substantially existed on the hydrothermally synthesized ZnO nanorods) which are responsible for absorption of the visible light and production of hydroxyl radicals, respectively. Water contact angle measurements showed that the sample with more surface OH groups has a more hydrophilic surface and so more antibacterial activity.

  8. Vertically aligned ZnO@CdS nanorod heterostructures for visible light photoinactivation of bacteria

    International Nuclear Information System (INIS)

    Zirak, M.; Akhavan, O.; Moradlou, O.; Nien, Y.T.; Moshfegh, A.Z.

    2014-01-01

    Highlights: • Synthesis of vertically aligned ZnO@CdS nanorod heterostructures. • Effective antibacterial application of the ZnO@CdS nanorods under visible light irradiation. • Determination of the optimum loading of CdS on the ZnO nanorods in the antibacterial application. -- Abstract: Vertically aligned ZnO@CdS nanorod heterostructure films with various loadings of CdS nanoparticle shell were synthesized and applied in photoinactivation of Escherichia coli bacteria under visible light irradiation. While neither the bare ZnO nanorods (with band-gap energy (E g ) of ∼3.28 eV) under visible light irradiation nor the nanorod heterostructures in dark exhibited any significant antibacterial activity, the ZnO@CdS nanorod heterostructures (with E g ∼2.5–2.6 eV) could successfully inactivate the bacteria under visible light irradiation. Furthermore, it was found that an optimum loading of the CdS shell (corresponding to the effective thickness less than ∼15 nm) is required to achieve a complete inactivation of the bacteria after 24 h visible light irradiation at room temperature. Using X-ray photoelectron spectroscopy, the lower photoinactivation efficiencies of the ZnO@CdS nanorod heterostructure at CdS thicknesses lower and higher than the optimum one were assigned to lower amounts of CdS nanoparticles and OH bonds (substantially existed on the hydrothermally synthesized ZnO nanorods) which are responsible for absorption of the visible light and production of hydroxyl radicals, respectively. Water contact angle measurements showed that the sample with more surface OH groups has a more hydrophilic surface and so more antibacterial activity

  9. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    International Nuclear Information System (INIS)

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  10. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  11. High-efficiency super capacitors based on hetero-structured α-MnO{sub 2} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ghouri, Zafar Khan [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shaheer Akhtar, M. [New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Zahoor, Awan [Department of Chemical Engineering, NED University of Engineering & Technology, University Road, Karachi 75270 (Pakistan); Barakat, Nasser A.M., E-mail: nasser@jbnu.ac.kr [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Chemical Engineering, Faculty of Engineering, El-Minia University, El-Minia (Egypt); Han, Weidong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Mira [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-09-05

    Highlights: • Hetero-structured α-MnO{sub 2} nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg{sup −1} with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO{sub 2}) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO{sub 2} nanorods. Supercapacitive performance of the hetero-structured α-MnO{sub 2} nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO{sub 2} hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO{sub 6}] structure yield a significantly high specific capacitance of 298 Fg{sup −1} at 5 mV s{sup −1} and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO{sub 2} electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport.

  12. Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

    Directory of Open Access Journals (Sweden)

    C. N. Ironside

    2017-02-01

    Full Text Available We report on atomic probe microscopy (APM of isotopically enriched ZnO nanorods that measures the spatial distribution of zinc isotopes in sections of ZnO nanorods for natural abundance natZnO and 64Zn and 66Zn enriched ZnO nanorods. The results demonstrate that APM can accurately quantify isotopic abundances within these nanoscale structures. Therefore the atom probe microscope is a useful tool for characterizing Zn isotopic heterostructures in ZnO. Isotopic heterostructures have been proposed for controlling thermal conductivity and also, combined with neutron transmutation doping, they could be key to a novel technology for producing p-n junctions in ZnO thin films and nanorods.

  13. Thermoluminescence kinetic analysis and dosimetry features of MgSO4:Dy and MgSO4:Cu nano-rods

    International Nuclear Information System (INIS)

    Zahedifar, M.; Almasifard, F.; Sadeghi, E.; Biroon, M. Kashefi; Ramazani- Moghaddam-Arani, A.

    2016-01-01

    MgSO 4 :Dy and MgSO 4 :Cu nano-rods (NRs) were synthesized for the first time by semi co- precipitation method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS) were utilized for sample characterization. The optimum amount of dysprosium and copper concentrations were obtained both at 0.1 mol% in MgSO 4 :Dy and MgSO 4 :Cu NRs. T m -T stop and computerized glow curve deconvolution (CGCD) methods were used for identifying the number of component glow peaks and kinetic parameters of the synthesized NRs. Initial rise and variable heating rate methods were also used to ensure the reliability of obtained kinetic parameters. Results show that the TL sensitivity of MgSO 4 :Dy is about 7 times more than that of magnesium sulfate doped with Cu. The TL dose response of MgSO 4 :Dy and MgSO 4 :Cu NRs are linear up to absorbed dose of 10 KGy. Other TL dosimetry characteristics of the produced NRs are also presented and discussed. - Highlights: • MgSO4:Dy and MgSO4:Cu nano-rods were synthesized for the first time. • Thermoluminescence dosimetry properties were studied. • The nano-phosphors showed linear dose response up to very high dose levels. • The synthesized nano-rods have potential application for high dose dosimetry.

  14. Polarization Properties of Semiconductor Nanorod Heterostructures: From Single Particles to the Ensemble.

    Science.gov (United States)

    Hadar, Ido; Hitin, Gal B; Sitt, Amit; Faust, Adam; Banin, Uri

    2013-02-07

    Semiconductor heterostructured seeded nanorods exhibit intense polarized emission, and the degree of polarization is determined by their morphology and dimensions. Combined optical and atomic force microscopy were utilized to directly correlate the emission polarization and the orientation of single seeded nanorods. For both the CdSe/CdS sphere-in-rod (S@R) and rod-in-rod (R@R), the emission was found to be polarized along the nanorod's main axis. Statistical analysis for hundreds of single nanorods shows higher degree of polarization, p, for R@R (p = 0.83), in comparison to S@R (p = 0.75). These results are in good agreement with the values inferred by ensemble photoselection anisotropy measurements in solution, establishing its validity for nanorod samples. On this basis, photoselection photoluminescence excitation anisotropy measurements were carried out providing unique information concerning the symmetry of higher excitonic transitions and allowing for a better distinction between the dielectric and the quantum-mechanical contributions to polarization in nanorods.

  15. Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

    2016-07-15

    Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

  16. Y-Doped ZnO Nanorods by Hydrothermal Method and Their Acetone Gas Sensitivity

    Directory of Open Access Journals (Sweden)

    Peng Yu

    2013-01-01

    Full Text Available Pure and yttrium- (Y- doped (1 at%, 3 at%, and 7 at% ZnO nanorods were synthesized using a hydrothermal process. The crystallography and microstructure of the synthesized samples were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray spectroscopy (EDX. Comparing with pure ZnO nanorods, Y-doped ZnO exhibited improved acetone sensing properties. The response of 1 at% Y-doped ZnO nanorods to 100 ppm acetone is larger than that of pure ZnO nanorods. The response and recovery times of 1 at% Y-doped ZnO nanorods to 100 ppm acetone are about 30 s and 90 s, respectively. The gas sensor based on Y-doped ZnO nanorods showed good selectivity to acetone in the interfere gases of ammonia, benzene, formaldehyde, toluene, and methanol. The formation mechanism of the ZnO nanorods was briefly analyzed.

  17. A two-step obtainment of quantum confinement in ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A C; El-Shaer, A; Suleiman, M; Bakin, A; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2006-10-14

    ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn{sub 0.85}Mg{sub 0.15}O heterostructures were grown on the nanorods using molecular beam epitaxy. The nanorods are well aligned along the c-axis of ZnO, as indicated by a very narrow rocking curve full width at half maximum. Quantum confinement was clearly observed within the ZnO well for different well widths. The quantum wells show photoluminescence peaks with a full width at half maximum as small as 15 meV.

  18. Cathodoluminescence of single ZnO nanorod heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Piechal, Bernard; Donatini, Fabrice; Dang, Le Si [CNRS-CEA-UJF joint group ' ' Nanophysique et Semiconducteurs' ' , Universite Joseph Fourier (CNRS UMR 5588), Saint Martin d' Heres (France); Yoo, Jinkyoung; Yi, Gyu-Chul [National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang (Korea); Elshaer, Abdelhamid; Mofor, A.C.; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology (IHT), TU Braunschweig (Germany)

    2007-05-15

    Optical properties of ZnO-based single nanorods are probed by cathodoluminescence (CL) measurements at T = 5 K. We observe a variation of the ZnO near band edge CL by three orders of magnitude along the nanorod axis, accompanied by a spectral blueshift of 10-30 meV. This indicates a rather poor structural quality of the nanorod bottom part, close to the substrate. ZnO/ZnMgO quantum wells grown on top of ZnO nanorods are found to exhibit much stronger confinement effects as compared to their two-dimensional counterparts, suggesting a reduced spontaneous and piezoelectric polarization effects. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Structural, optical and magnetic characterization of Ru doped ZnO nanorods

    International Nuclear Information System (INIS)

    Kumar, Sanjeev; Kaur, Palvinder; Chen, C.L.; Thangavel, R.; Dong, C.L.; Ho, Y.K.; Lee, J.F.; Chan, T.S.; Chen, T.K.; Mok, B.H.; Rao, S.M.; Wu, M.K.

    2014-01-01

    Graphical abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice distortion. Highlights: • Ru doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). • PL and Raman studies show the formation of singly ionized oxygen vacancies in 2% Ru doped ZnO. • XAS reveals that Ru replace the Zn atoms in the host lattice with slightly lattice distortion. • Doping of Ru in ZnO nanostructures gives rise to RTFM ordering. -- Abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice

  20. Synthesis of Ru doped hematite nanorods for application as photo-anode material in a photoelectrochemical cell (PEC)

    Energy Technology Data Exchange (ETDEWEB)

    Ndlangamandla, C. L. [University of Zululand, Department of Physics and Engineering (South Africa); Bharuth-Ram, K., E-mail: kbr@tlabs.ac.za [Durban University of Technology, Physics Department (South Africa); Ngom, B. D.; Maaza, M. [iThemba LABS, Materials Research Department (South Africa)

    2017-11-15

    Nanostructured thin films of hematite doped with different concentrations of ruthenium were grown on fluorine doped tin oxide glass substrates using the aqueous chemical growth method. On further heat treatment at 500 {sup ∘}C the structures morphed into hematite nanorods (NRs). The Ru concentration in the NRs was controlled by varying the Ru concentration in the RuCl {sub 3}⋅H{sub 2}O precursors. Scanning Electron Microscopy confirmed the formation of the hematite nanorods, while. X-ray diffraction and Mössbauer spectroscopy (MS) data provided clear evidence of the crystallinity of the nanorods and incorporation of ruthenium in the hematite nanorod structure. The band gap of the Ru-doped hematite NRs, estimated from UV-Vis optical absorption intensity vs photon energy curves, were found to be directly related to the Ru concentration. For concentrations in the range 6–30 mg the band gaps are in the range well suited to drive the water splitting process in a photoelectrochemical cell without application of an external bias.

  1. Solvothermally synthesized europium-doped CdS nanorods: applications as phosphors

    International Nuclear Information System (INIS)

    Kumar, Sunil; Jindal, Zinki; Kumari, Nitu; Verma, Narendra Kumar

    2011-01-01

    To exploit the photoluminescent behavior of CdS at nanoscale with different doping concentration of europium—a rare earth element, we report the synthesis of Eu-doped CdS nanorods by using low temperature solvothermal process by using ethylenediamine. The outcomes can have future applications as phosphors, photovoltaic cells, lasers, light emitting diodes, bio-imaging, and sensors. The doping was confirmed by electron dispersive spectroscopy supported by X-ray diffraction. From scanning electron microscopy and transmission electron microscopy analysis it was observed that the average diameter of the Cd 1−x Eu x S nanorods is about 10–12 nm having lengths in the range of 50–100 nm. UV–Visible spectroscopy study was carried out to determine the band gap of the nanorods and the absorbance peaks showed blue shift with respect to the bulk CdS. The blue shift was also observed as the doping concentration of Eu increases. From photoluminescence (PL) studies at λ ex = 450 nm, peaks at 528 and 540 nm were observed due to CdS, peak at 570 nm is due to defects related transitions, while the peak at 613 nm is due to Eu. As the doping concentration of Eu is increased the intensity of the luminescent peak at 613 nm is increased. Thermogravimetric analysis showed the nanorods are thermally stable up to 300 °C. The traces of impurities adsorbed on the nanorods were confirmed by Fourier transform infrared spectroscopy.

  2. Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

    Science.gov (United States)

    Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

    2013-02-06

    Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

  3. A novel ammonia complex-assisted ion-exchange strategy to fabricate heterostructured PdO/TiO{sub 2} nanorods with enhanced photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Liang, E-mail: shiliang19870917@163.com [Ocean University of China, College of Chemistry and Chemical Engineering (China); Han, Qian, E-mail: 120339369@qq.com [Ocean University of China, Institute of Materials Science and Engineering (China); Cao, Lixin, E-mail: caolixin@ouc.edu.cn [Ocean University of China, College of Chemistry and Chemical Engineering (China); Zhao, Fenghuan, E-mail: 1029581171@qq.com [Ocean University of China, Institute of Materials Science and Engineering (China); Xia, Chenghui, E-mail: c.xia@uu.nl [Ocean University of China, College of Chemistry and Chemical Engineering (China); Dong, Bohua, E-mail: dongbohua@ouc.edu.cn; Xi, Yaoning, E-mail: 464985694@qq.com [Ocean University of China, Institute of Materials Science and Engineering (China)

    2016-12-15

    Heterojunctions have been often employed to improve the photocatalytic behavior of titania-based materials. Herein, we propose a novel strategy to fabricate PdO/TiO{sub 2} heterostructured nanorods, as PdO was proved to be an efficient co-catalyst in photocatalytic reactions. Primarily, ammonia complex-assisted ion-exchange method was used to store Pd(II) ions in protonated titanate nanotubes, as which cannot be replaced by metallic cations via traditional route. Then, PdO/TiO{sub 2} heterojunctions formed through calcination in air, as nanotubes dehydrated and shrank into nanorods. X-ray diffraction, Raman spectra, and X-ray photoelectron spectroscopy were used to demonstrate the formation of PdO component, and transmission electron microscopy was employed to prove the successful connection between TiO{sub 2} nanorods and PdO nanoparticles. Moreover, inductive coupled plasma proved excellent compositional gradient of Pd(II) in the PdO/TiO{sub 2} heterostructured nanorods. In the present work, the photocatalytic activities of PdO/TiO{sub 2} heterostructured nanorods were investigated by decoloring several dyes under UV illumination. Our research revealed appropriate PdO loading (1.0 wt%) enhanced photocatalytic performance compared with bare TiO{sub 2} nanorods, where PdO/TiO{sub 2} heterojunctions were responsible for the prohibitive photogenerated carries recombination.

  4. Luminescent properties of codoping Y{sub 2}O{sub 3}: Eu, Me (Me = Mg, Ca) nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Liu Zhilong; Wang Qin; Yang Yuming; Tao Chunyan; Yang Hua, E-mail: huayang86@sina.co [Jilin University, College of Chemistry (China)

    2010-08-15

    Phosphors of nanorods Y{sub 2}O{sub 3}: Eu (Mg, Ca) have been prepared by the hydrothermal method. The effect of Mg, Ca co-dopants on the Y{sub 2}O{sub 3}: Eu phosphor photoluminescence (PL) property was investigated. Upon excitation with ultraviolet (UV) irradiation, it is shown that there is a strong emission at around 610 nm corresponding to the forced electric dipole {sup 5}D{sub 0}-{sup 7}F{sub 2} transition of Eu{sup 3+}. At a certain concentration, Mg, Ca ions' doping effectively enhanced the luminescent properties of Y{sub 2}O{sub 3}: Eu{sup 3+} nanorods and did not change the cubic phase of the host. The structure of Y{sub 2}O{sub 3}: Eu{sup 3+} (Mg, Ca) phosphors was characterized by X-Ray diffraction (XRD). From XRD patterns, it is indicated that the phosphor Y{sub 2}O{sub 3}:(Eu, Ca) forms without impurity phase. From SEM, TEM images, it is shown that the crystal size of the nanorods phosphors is about 1-2 {mu}m in length and 30-50 nm in diameter.

  5. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  6. Y-doping TiO2 nanorod arrays for efficient perovskite solar cells

    Science.gov (United States)

    Deng, Xinlian; Wang, Yanqing; Cui, Zhendong; Li, Long; Shi, Chengwu

    2018-05-01

    To improve the electron transportation in TiO2 nanorod arrays and charge separation in the interface of TiO2/perovskite, Y-doping TiO2 nanorod arrays with the length of 200 nm, diameter of 11 nm and areal density of 1050 μm-2 were successfully prepared by the hydrothermal method and the influence of Y/Ti molar ratios of 0%, 3%, 5% in the hydrothermal grown solutions on the growth of TiO2 nanorod arrays was investigated. The results revealed that the appropriate Y/Ti molar ratios can increase the areal density of the corresponding TiO2 nanorod arrays and improve the charge separation in the interface of the TiO2/perovskite. The Y-doping TiO2 nanorod array perovskite solar cells with the Y/Ti molar ratio of 3% exhibited a photoelectric conversion efficiency (PCE) of 18.11% along with an open-circuit voltage (Voc) of 1.06 V, short-circuit photocurrent density (Jsc) of 22.50 mA cm-2 and fill factor (FF) of 76.16%, while the un-doping TiO2 nanorod array perovskite solar cells gave a PCE of 16.42% along with Voc of 1.04 V, Jsc of 21.66 mA cm-2 and FF of 72.97%.

  7. Synthesis and in-depth analysis of highly ordered yttrium doped hydroxyapatite nanorods prepared by hydrothermal method and its mechanical analysis

    International Nuclear Information System (INIS)

    Nathanael, A. Joseph; Mangalaraj, D.; Hong, S.I.; Masuda, Y.

    2011-01-01

    In this study, undoped and yttrium (Y) doped nanocrystalline hydroxyapatite crystals were synthesized by the hydrothermal method at 180 °C for 24 h. Highly ordered and oriented hydroxyapatite (HAp) nanorods were prepared by yttrium doping and their nanostructure and physical properties were compared with those of undoped HAp rods. FESEM images showed that the doping with Y ions reduced the diameter (from 25 nm to 15 nm) and increased the length (from 95 nm to 115 nm) of the synthesized rods. The aspect ratio of the undoped and Y-doped nanorods were calculated to be 4.303 (SD = 0.0959) and 7.61 (SD = 0.0355), respectively. Specific surface area (SSA) analysis showed that SSA also increased from 66.74 m 2 /g to 68.57 m 2 /g with the addition of yttrium. Y-doped HAp nanorod reinforced HMWPE composites displayed the better mechanical performance than those reinforced with pure HAp nanorods. The possible strengthening of nanorods and the increase of SSA due to the reduction in the size of nanorods in the presence of yttrium may have contributed to the strengthening of Y-doped HAp/HMWPE composites. - Graphical Abstract: Highly ordered and oriented yttrium doped hydroxyapatite (HAp) nanorods were prepared by hydrothermal method. For undoped HAp the average length of the nanorod is 95 nm with mean diameter of 24 nm and for a Y doped nanorod the average length is ∼ 115 nm and the mean diameter is 15 nm. Mechanical analysis was carried out by polymer/nanoparticle composite method. Highlights: ► Yttrium doped hydroxyapatite nanorods were prepared by hydrothermal method. ► The nanorods have highly uniform size distribution. ► Yttrium substitution and nanostructure formation was confirmed by careful analysis. ► Mechanical strength was analyzed by polymer nanoparticle reinforcement method.

  8. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yong, E-mail: yongwen1982@163.com [School of Civil Engineering and Architecture, Xinjiang University (China); Pei, Li-zhai; Wei, Tian [chool of Materials Science and Engineering, Anhui University of Technology (China)

    2017-05-15

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi{sub 2}O{sub 4} and cubic LiBi{sub 12}O{sub 18.50} phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  9. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    International Nuclear Information System (INIS)

    Wen, Yong; Pei, Li-zhai; Wei, Tian

    2017-01-01

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi_2O_4 and cubic LiBi_1_2O_1_8_._5_0 phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  10. Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

    KAUST Repository

    Alarawi, Abeer

    2014-06-23

    Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano-rods prepared, for the first time to our knowledge, by pulsed laser deposition (PLD) without any catalyst. X-ray diffraction (XRD) patterns shows that these Eu doped ZnO nanorods are grown along the c-axis of ZnO wurtzite structure. We have studied the effect of the PLD growth conditions on forming vertically aligned Eu doped ZnO nanorods. The structural properties of the material are investigated using a -scanning electron microscope (SEM). The PLD parameters must be carefully controlled in order to obtain c-axis oriented ZnO nanorods on sapphire substrates, without the use of any catalyst. The experiments conducted in order to identify the optimal growth conditions confirmed that, by adjusting the target-substrate distance, substrate temperature, laser energy and deposition duration, the nanorod size could be successfully controlled. Most importantly, the results indicated that the photoluminescence (PL) properties reflect the quality of the ZnO nanorods. These parameters can change the material’s structure from one-dimensional to two-dimensional however the laser energy and frequency affect the size and the height of the nanorods; the xygen pressure changes the density of the nanorods.

  11. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Science.gov (United States)

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

    Science.gov (United States)

    Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

    2017-09-01

    Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

  13. Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

    2018-07-01

    Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

  14. Improve photovoltaic performance of titanium dioxide nanorods based dye-sensitized solar cells by Ca-doping

    International Nuclear Information System (INIS)

    Li, Weixin; Yang, Junyou; Zhang, Jiaqi; Gao, Sheng; Luo, Yubo; Liu, Ming

    2014-01-01

    Highlights: • TiO 2 nanorods doped with Ca ions were synthesized by one-step hydrothermal method. • The flat band edge of rutile TiO 2 shifted positively via Ca-doping. • The photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) based on TiO 2 electrode was much enhanced by Ca-doping. • A relatively high open circuit voltage was obtained by adopting Ca-doped TiO 2 nanorods electrode. - Abstract: Ca-doped TiO 2 nanorod arrays were prepared via the one-step hydrothermal method successfully, and the effect of Ca ions content on the photovoltaic conversion efficiency of dye-sensitized solar cells has been fully discussed in the paper. Although no obvious change on the microstructure and morphology was observed by field emission scanning electron microscope and transmission electron microscope for the Ca-doped samples, the results of X-ray diffraction and X-ray photoelectron spectroscopy confirmed that Ti 4+ was substituted with Ca 2+ successfully. UV–vis spectroscopy results revealed that the flat band edge shifted positively by Ca ions doping. The photovoltaic conversion efficiency of the dye-sensitized solar cells based on the 2 mol% Ca-doped TiO 2 electrode was 43% higher than that of the undoped one due to the less recombination possibility

  15. Morphology-controllable of Sn doped ZnO nanorods prepared by spray pyrolysis for transparent electrode application

    Science.gov (United States)

    Hameed, M. Shahul; Princice, J. Joseph; Babu, N. Ramesh; Zahirullah, S. Syed; Deshmukh, Sampat G.; Arunachalam, A.

    2018-05-01

    Transparent conductive Sn doped ZnO nanorods have been deposited at various doping level by spray pyrolysis technique on glass substrate. The structural, surface morphological and optical properties of these films have been investigated with the help of X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer respectively. XRD patterns revealed a successful high quality growth of single crystal ZnO nanorods with hexagonal wurtzite structure having (002) preferred orientation. The scanning electron microscope (SEM) image of the prepared films exposed the uniform distribution of Sn doped ZnO nanorod shaped grains. All these films were highly transparent in the visible region with average transmittance of 90%.

  16. TiO2 nanocrystals decorated Z-schemed core-shell CdS-CdO nanorod arrays as high efficiency anodes for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Li, Chia-Hsun; Hsu, Chan-Wei; Lu, Shih-Yuan

    2018-07-01

    TiO 2 nanocrystals decorated core-shell CdS-CdO nanorod arrays, TiO 2 @CdO/CdS NR, were fabricated as high efficiency anodes for photoelctrochemical hydrogen generation. The novel sandwich heterostructure was constructed from first growth of CdS nanorod arrays on a fluorine doped tin oxide (FTO) substrate with a hydrothermal process, followed by in situ generation of CdO thin films of single digit nanometers from the CdS nanorod surfaces through thermal oxidation, and final decoration of TiO 2 nanocrystals of 10-20 nm via a successive ionic layer absorption and reaction process. The core-shell CdS-CdO heterostructure possesses a Z-scheme band structure to enhance interfacial charge transfer, facilitating effective charge separation to suppress electron-hole recombination within CdS for much improved current density generation. The final decoration of TiO 2 nanocrystals passivates surface defects and trap states of CdO, further suppressing surface charge recombination for even higher photovoltaic conversion efficiencies. The photoelectrochemical performances of the plain CdS nanorod array were significantly improved with the formation of the sandwich heterostructure, achieving a photo current density of 3.2 mA/cm 2 at 1.23 V (vs. RHE), a 141% improvement over the plain CdS nanorod array and a 32% improvement over the CdO/CdS nanorod array. Copyright © 2018 Elsevier Inc. All rights reserved.

  17. Fabrication and Characterization of Highly Oriented N-Doped ZnO Nanorods by Selective Area Epitaxy

    Directory of Open Access Journals (Sweden)

    Yang Zhang

    2015-01-01

    Full Text Available High-quality nitrogen-doped ZnO nanorods have been selectively grown on patterned and bare ZnO templates by the combination of nanoimprint lithography and chemical vapor transport methods. The grown nanorods exhibited uniformity in size and orientation as well as controllable density and surface-to-volume ratio. The structural and optical properties of ZnO nanorods and the behaviour of N dopants have been investigated by means of the scanning electron microscope, photoluminescence (PL spectra, and Raman scattering spectra. The additional vibration modes observed in Raman spectra of N-doped ZnO nanorods provided solid evidence of N incorporation in ZnO nanorods. The difference of excitonic emissions from ZnO nanorods with varied density and surface-to-volume ratio suggested the different spatial distribution of intrinsic defects. It was found that the defects giving rise to acceptor-bound exciton (A0X emission were most likely to distribute in the sidewall surface with nonpolar characteristics, while the donor bound exciton (D0X emission related defects distributed uniformly in the near top polar surface.

  18. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    International Nuclear Information System (INIS)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-01-01

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

  19. Luminescence properties of pure and doped CaSO4 nanorods irradiated by 15 MeV e-beam

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Enani, Mohammad A.

    2014-01-01

    Calcium sulfate (CaSO 4 ) doped with proper activators is a highly sensitive phosphor used in different fields mainly for radiation dosimetry, lighting and display applications. In this work pure and doped nanorods of CaSO 4 were produced by the co-precipitation technique. Samples from this material doped with Ag, Cu, Dy, Eu and Tb were exposed to different doses of 15 MeV e-beam and studied for their thermoluminesence (TL) and photoluminescence (PL) properties. Color center formation leading to PL emissions were investigated before and after e-beam irradiation. The samples doped with rare earths elements (i.e. Dy, Eu and Tb) were observed to have thinner nanorods than the other samples and have higher absorption in the UV region. The Ag and Tb doped samples have poor TL response to e-beam, while those activated by Cu, Dy and Eu have strong glow peaks at around 123 °C. Quite linear response curves in the whole studied exposures i.e. 0.1–100 Gy were also observed in Cu and Dy doped samples. The PL results show that pure CaSO 4 nanorods have active color centers without irradiation, which could be enriched/modified by these impurities mainly rare earths and further enhanced by e-beam irradiation. Eu 3+ → Eu 2+ conversion is clearly observed in Eu doped sample after e-beam irradiation. These results show that these nanorods might be useful in lighting and display devices development

  20. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

    Science.gov (United States)

    Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

    2015-05-01

    We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  1. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    International Nuclear Information System (INIS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-01-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

  2. Dependence of critical current properties on growth temperature and doping level of nanorods in PLD-YBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Fujita, N.; Haruta, M.; Ichinose, A.; Maeda, T.; Horii, S.

    2013-01-01

    Highlights: •We fabricated Y123 films with Ba–Nb–O nanorods at various growth temperatures. •Irreversibility lines depended on growth temperature and doping level of Ba–Nb–O. •Nanorod morphology was drastically changed by growth temperature (T s ). •Its T s dependence of the matching field was different from that for Er123 + Ba–Nb–O. -- Abstract: The vortex-Bose-glass-like irreversibility lines (ILs) emerged for 2.5 and 5.0 at.% Ba–Nb–O (BNO)-doped YBa 2 Cu 3 O y films deposited by PLD using Nd:YAG-laser. The ILs strongly depended on growth temperature (T s ) in addition to the doping level of BNO. The vortex glass region was expanded with increasing T s or doping level of BNO. Drastic change of the nanorod morphology from short and bended nanorods to long and linear nanorods with increasing T s was clarified. Moreover, it was found that T s -dependent ILs were quite different from our previous results in BNO-doped ErBa 2 Cu 3 O y films

  3. Synthesis and characterization of Cu-doped hydroxyapatite nanorods for cancer diagnosis

    International Nuclear Information System (INIS)

    Rezende, Michele Rocha; Cipreste, Marcelo Fernandes; Aragon, Fermin Herrera; Leal, Alexandre Soares; Macedo, Waldemar Augusto de Almeida; Sousa, Edesia Martins Barros de

    2016-01-01

    Full text: Theranostic nanomaterials have been widely studied around the world for the cancer treatment strategies management due to the unique property that allows nanoparticles to spontaneously and selectively accumulate in tumor sites and make simultaneously diagnosis and treatment of many types of tumors [1]. Beyond the various classes of nanomaterials, hydroxyapatite (HA) nanorods are highlighted as important bioceramics that present biocompatibility, bioactivity and osteoinductivity. Another important feature of hydroxyapatite is that HA nanorods, as nanocrystalline structures, allow replacement of its internal ionic components for metallic elements to impart new properties to the material. A diagnostic nanomaterial can be obtained by the doping HA nanorods with cooper and promoting the neutron activation of HA-Cu in nuclear reactor, producing the HA- 64 Cu nanorods. 64 Cu is a positron emitter radionuclide that allows its usage in PET scan equipment. However, high concentrations of cooper ions are toxic to human organism [2]. Nevertheless, the production of stable HA-Cu nanorods is of great interest making possible to eliminate the cytotoxicity of cooper based radiotracers. The aim of the present work was to synthesize cooper-doped HA nanorods by co-precipitation method, characterize the samples by XRD with Rietveld refinement, SEM, FTIR and EDX. The stability of the chemical interactions between HA and Gd was investigated in aqueous suspensions at different time intervals and the suspensions were analyzed by ICP-AES. The results indicate that Cu can be allocated in HA lattice, forming a stable interaction where no cooper ions can be released from the hydroxyapatite matrix, crediting this material for neutron activation assays and future biological tests. References: [1] E. Lim et al. Chem. Rev. 115:327 (2015); [2] G. Malandrinos et al. Coord. Chem. Rev. 262:55 (2014). (author)

  4. Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique

    Energy Technology Data Exchange (ETDEWEB)

    Panda, J.; Sasmal, I.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in, E-mail: tapnath@gmail.com [Department of Physics, Indian Institute Technology Kharagpur, West Bengal, 721302 (India)

    2016-03-15

    In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline nanorods are hexagonal. The diameter and length of the as grown undoped ZnO nanorods varies in the range of 80-150 nm and 1.0 - 1.4 μm, respectively. Along with the lattice parameters of the hexagonal crystal structure, the diameter and length of Mn doped ZnO nanorods are found to increase slightly as compared to the undoped ZnO nanorods. The X-ray photoelectron spectroscopy confirms the presence of Mn atoms in Mn{sup 2+} state in the single crystalline ZnO nanorods. The recorded photoluminescence spectrum contains two emissions peaks having UV exciton emissions along with a green-yellow emission. The green-yellow emissions provide the evidence of singly ionized oxygen vacancies. The magnetic field dependent magnetization measurements [M (H)] and zero field cooled (ZFC) and field cooled (FC) magnetization [M(T)] measurements have been carried out at different isothermal conditions in the temperature range of 5-300 K. The Mn doped ZnO nanorods clearly show room temperature ferromagnetic ordering near room temperature down to 5 K. The observed magnetization may be attributed to the long range ferromagnetic interaction between bound magnetic polarons led by singly charged oxygen vacancies.

  5. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    International Nuclear Information System (INIS)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung; Lee, Sangheon; Kim, Jong Su; Kim, Jin Soo; Kim, Do Yeob; Kim, Sungo

    2013-01-01

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I NBE /I DLE ) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies

  6. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Lee, Sangheon; Kim, Jong Su [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Kim, Do Yeob; Kim, Sungo [Clemson Univ., Clemson (United States)

    2013-04-15

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I{sub NBE}/I{sub DLE}) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

  7. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    International Nuclear Information System (INIS)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-01-01

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

  8. Luminescence properties of pure and doped CaSO{sub 4} nanorods irradiated by 15 MeV e-beam

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Enani, Mohammad A. [Dept. of Nuclear Engineering, Faculty of Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2014-01-15

    Calcium sulfate (CaSO{sub 4}) doped with proper activators is a highly sensitive phosphor used in different fields mainly for radiation dosimetry, lighting and display applications. In this work pure and doped nanorods of CaSO{sub 4} were produced by the co-precipitation technique. Samples from this material doped with Ag, Cu, Dy, Eu and Tb were exposed to different doses of 15 MeV e-beam and studied for their thermoluminesence (TL) and photoluminescence (PL) properties. Color center formation leading to PL emissions were investigated before and after e-beam irradiation. The samples doped with rare earths elements (i.e. Dy, Eu and Tb) were observed to have thinner nanorods than the other samples and have higher absorption in the UV region. The Ag and Tb doped samples have poor TL response to e-beam, while those activated by Cu, Dy and Eu have strong glow peaks at around 123 °C. Quite linear response curves in the whole studied exposures i.e. 0.1–100 Gy were also observed in Cu and Dy doped samples. The PL results show that pure CaSO{sub 4} nanorods have active color centers without irradiation, which could be enriched/modified by these impurities mainly rare earths and further enhanced by e-beam irradiation. Eu{sup 3+} → Eu{sup 2+} conversion is clearly observed in Eu doped sample after e-beam irradiation. These results show that these nanorods might be useful in lighting and display devices development.

  9. Synthesis of Fe-Doped ZnO Nanorods by Rapid Mixing Hydrothermal Method and Its Application for High Performance UV Photodetector

    Directory of Open Access Journals (Sweden)

    Chan Oeurn Chey

    2014-01-01

    Full Text Available We have successfully synthesized Fe-doped ZnO nanorods by a new and simple method in which the adopted approach is by using ammonia as a continuous source of OH- for hydrolysis instead of hexamethylenetetramine (HMT. The energy dispersive X-ray (EDX spectra revealed that the Fe peaks were presented in the grown Fe-doped ZnO nanorods samples and the X-ray photoelectron spectroscopy (XPS results suggested that Fe3+ is incorporated into the ZnO lattice. Structural characterization indicated that the Fe-doped ZnO nanorods grow along the c-axis with a hexagonal wurtzite structure and have single crystalline nature without any secondary phases or clusters of FeO or Fe3O4 observed in the samples. The Fe-doped ZnO nanorods showed room temperature (300 K ferromagnetic magnetization versus field (M-H hysteresis and the magnetization increases from 2.5 μemu to 9.1 μemu for Zn0.99Fe0.01O and Zn0.95Fe0.05O, respectively. Moreover, the fabricated Au/Fe-doped ZnO Schottky diode based UV photodetector achieved 2.33 A/W of responsivity and 5 s of time response. Compared to other Au/ZnO nanorods Schottky devices, the presented responsivity is an improvement by a factor of 3.9.

  10. Solvothermal synthesis of nanorods of ZnO, N-doped ZnO and CdO

    International Nuclear Information System (INIS)

    Varghese, Neenu; Panchakarla, L.S.; Hanapi, M.; Govindaraj, A.; Rao, C.N.R.

    2007-01-01

    ZnO nanorods with diameters in the 80-800 nm range are readily synthesized by the reaction of zinc acetate, ethanol and ethylenediamine under solvothermal conditions. The best products are obtained at 330 deg. C with a slow heating rate. Addition of the surfactant Triton -X 100 gave nanorods of uniform (300 nm) diameter. By adding a small amount of liquid NH 3 to the reaction mixture, N-doped ZnO nanorods, with distinct spectroscopic features are obtained. CdO nanorods of 80 nm diameter have been prepared under solvothermal conditions using a mixture of cadmium cupferronate, ethylenediamine and ethanol at 330 deg. C. Similarly, Zn 1-x Cd x O nanorods of a 70 nm diameter are obtained under solvothermal conditions starting with a mixture of zinc acetate, cadmium cupferronate, ethanol and ethylenediamine

  11. Unclonable Security Codes Designed from Multicolor Luminescent Lanthanide-Doped Y2O3 Nanorods for Anticounterfeiting.

    Science.gov (United States)

    Kumar, Pawan; Nagpal, Kanika; Gupta, Bipin Kumar

    2017-04-26

    The duplicity of important documents has emerged as a serious problem worldwide. Therefore, many efforts have been devoted to developing easy and fast anticounterfeiting techniques with multicolor emission. Herein, we report the synthesis of multicolor luminescent lanthanide-doped Y 2 O 3 nanorods by hydrothermal method and their usability in designing of unclonable security codes for anticounterfeiting applications. The spectroscopic features of nanorods are probed by photoluminescence spectroscopy. The Y 2 O 3 :Eu 3+ , Y 2 O 3 :Tb 3+ , and Y 2 O 3 :Ce 3+ nanorods emit hypersensitive red (at 611 nm), strong green (at 541 nm), and bright blue (at 438 nm) emissions at 254, 305, and 381 nm, respectively. The SEM and TEM/HRTEM results reveal that these nanorods have diameter and length in the range of 80-120 nm and ∼2-5 μm, respectively. The two-dimensional spatially resolved photoluminescence intensity distribution in nanorods is also investigated by using confocal photoluminescence microscopic technique. Further, highly luminescent unclonable security codes are printed by a simple screen printing technique using luminescent ink fabricated from admixing of lanthanide doped multicolor nanorods in PVC medium. The prospective use of these multicolor luminescent nanorods provide a new opportunity for easily printable, highly stable, and unclonable multicolor luminescent security codes for anti-counterfeiting applications.

  12. SILAR controlled CdSe nanoparticles sensitized ZnO nanorods photoanode for solar cell application: Electrolyte effect.

    Science.gov (United States)

    Nikam, Pratibha R; Baviskar, Prashant K; Majumder, Sutripto; Sali, Jaydeep V; Sankapal, Babasaheb R

    2018-08-15

    Controlled growth of different sizes of cadmium selenide (CdSe) nanoparticles over well aligned ZnO nanorods have been performed using successive ionic layer adsorption and reaction (SILAR) technique at room temperature (27 °C) in order to form nano heterostructure solar cells. Deposition of compact layer of zinc oxide (ZnO) by SILAR technique on fluorine doped tin oxide (FTO) coated glass substrate followed by growth of vertically aligned ZnO nanorods array using chemical bath deposition (CBD) at low temperature (SILAR cycles for CdSe and with use of different electrolytes have been recorded as J-V characteristics and the maximum conversion efficiency of 0.63% have been attained with ferro/ferri cyanide electrolyte for 12 cycles CdSe coating over 1-D ZnO nanorods. Copyright © 2018 Elsevier Inc. All rights reserved.

  13. Selective Facet Reactivity During Cation Exchange in Cadmium Sulfide Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Sadtler, Bryce; Demchenko, Denis; Zheng, Haimei; Hughes, Steven; Merkle, Maxwell; Dahmen, Ulrich; Wang, Lin-Wang; Alivisatos, A. Paul

    2008-12-18

    The partial transformation of ionic nanocrystals through cation exchange has been used to synthesize nanocrystal heterostructures. We demonstrate that the selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. In the case of copper I (Cu+) cation exchange in cadmium sulfide (CdS) nanorods, the reaction starts preferentially at the ends of the nanorods such that copper sulfide (Cu2S) grows inwards from either end. The resulting morphology is very different from the striped pattern obtained in our previous studies of silver I (Ag+) exchange in CdS nanorods where non-selective nucleation of silver sulfide (Ag2S) occurs. From interface formation energies calculated for several models of epitaxialconnections between CdS and Cu2S or Ag2S, we infer the relative stability of each interface during the nucleation and growth of Cu2S or Ag2S within the CdS nanorods. The epitaxial connections of Cu2S to the end facets of CdS nanorods minimize the formation energy, making these interfaces stable throughout the exchange reaction. However, as the two end facets of wurtzite CdS nanorods are crystallographically nonequivalent, asymmetric heterostructures can be produced.

  14. Heterostructured TiO2/NiTiO3 Nanorod Arrays for Inorganic Sensitized Solar Cells with Significantly Enhanced Photovoltaic Performance and Stability.

    Science.gov (United States)

    Li, Yue-Ying; Wang, Jian-Gan; Sun, Huan-Huan; Wei, Bingqing

    2018-04-11

    Organic dyes used in the conventional dye-sensitized solar cells (DSSCs) suffer from poor light stability and high cost. In this work, we demonstrate a new inorganic sensitized solar cell based on ordered one-dimensional semiconductor nanorod arrays of TiO 2 /NiTiO 3 (NTO) heterostructures prepared via a facile two-step hydrothermal approach. The semiconductor heterostructure arrays are highly desirable and promising for DSSCs because of their direct charge transport capability and slow charge recombination rate. The low-cost NTO inorganic semiconductor possesses an appropriate band gap that matches well with TiO 2 , which behaves like a "dye" to enable efficient light harvesting and fast electron-hole separation. The solar cells constructed by the ordered TiO 2 /NTO heterostructure photoanodes show a significantly improved power conversion efficiency, high fill factor, and more promising, outstanding life stability. The present work will open up an avenue to design heterostructured inorganics for high-performance solar cells.

  15. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  16. Visible Light Photoelectrochemical Properties of N-Doped TiO2 Nanorod Arrays from TiN

    Directory of Open Access Journals (Sweden)

    Zheng Xie

    2013-01-01

    Full Text Available N-doped TiO2 nanorod arrays (NRAs were prepared by annealing the TiN nanorod arrays (NRAs which were deposited by using oblique angle deposition (OAD technique. The TiN NRAs were annealed at 330°C for different times (5, 15, 30, 60, and 120 min. The band gaps of annealed TiN NRAs (i.e., N-doped TiO2 NRAs show a significant variance with annealing time, and can be controlled readily by varying annealing time. All of the N-doped TiO2 NRAs exhibit an enhancement in photocurrent intensity in visible light compared with that of pure TiO2 and TiN, and the one annealed for 15 min shows the maximum photocurrent intensity owning to the optimal N dopant concentration. The results show that the N-doped TiO2 NRAs, of which the band gap can be tuned easily, are a very promising material for application in photocatalysis.

  17. Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

    International Nuclear Information System (INIS)

    Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

    2016-01-01

    Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity. (paper)

  18. Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    I. Saurdi

    2014-01-01

    Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

  19. Synthesis of Mn-doped CeO 2 nanorods and their application as ...

    Indian Academy of Sciences (India)

    Mn-doped CeO2 nanorods have been prepared from CeO2 particles through a facile compositehydroxide-mediated (CHM) approach. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The analysis from the X-ray photoelectron ...

  20. Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

    Directory of Open Access Journals (Sweden)

    Shiraz Labib

    2013-12-01

    Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

  1. A novel fabrication methodology for sulfur-doped ZnO nanorods as an active photoanode for improved water oxidation in visible-light regime

    Science.gov (United States)

    Khan, A.; Ahmed, M. I.; Adam, A.; Azad, A.-M.; Qamar, M.

    2017-02-01

    Incorporation of foreign moiety in the lattice of semiconductors significantly alters their optoelectronic behavior and opens a plethora of new applications. In this paper, we report the synthesis of sulfur-doped zinc oxide (S-doped ZnO) nanorods by reacting ZnO nanorods with diammonium sulfide in vapor phase. Microscopic investigation revealed that the morphological features, such as, the length (2-4 μm) and width (100-250 nm) of the original hexagonal ZnO nanorods remained intact post-sulfidation. X-ray photoelectron spectroscopy analysis of the sulfide sample confirmed the incorporation of sulfur into ZnO lattice. The optical measurements suggested the extension of absorption threshold into visible region upon sulfidation. Photoelectrochemical (PEC) activities of pure and S-doped ZnO nanorods were compared for water oxidation in visible light (λ > 420 nm), which showed several-fold increment in the performance of S-doped ZnO sample; the observed amelioration in the PEC activity was rationalized in terms of preferred visible light absorption and low resistance of sulfide sample, as evidenced by optical and electrochemical impedance spectroscopy.

  2. Toward hybrid Au nanorods @ M (Au, Ag, Pd and Pt) core-shell heterostructures for ultrasensitive SERS probes

    Science.gov (United States)

    Xie, Xiaobin; Gao, Guanhui; Kang, Shendong; Lei, Yanhua; Pan, Zhengyin; Shibayama, Tamaki; Cai, Lintao

    2017-06-01

    Being able to precisely control the morphologies of noble metallic nanostructures is of essential significance for promoting the surface-enhanced Raman scattering (SERS) effect. Herein, we demonstrate an overgrowth strategy for synthesizing Au @ M (M = Au, Ag, Pd, Pt) core-shell heterogeneous nanocrystals with an orientated structural evolution and highly improved properties by using Au nanorods as seeds. With the same reaction condition system applied, we obtain four well-designed heterostructures with diverse shapes, including Au concave nanocuboids (Au CNs), Au @ Ag crystalizing face central cube nanopeanuts, Au @ Pd porous nanocuboids and Au @ Pt nanotrepangs. Subsequently, the exact overgrowth mechanism of the above heterostructural building blocks is further analysed via the systematic optimiziation of a series of fabrications. Remarkably, the well-defined Au CNs and Au @ Ag nanopeanuts both exhibit highly promoted SERS activity. We expect to be able to supply a facile strategy for the fabrication of multimetallic heterogeneous nanostructures, exploring the high SERS effect and catalytic activities.

  3. Ethanol sensing properties and dominant sensing mechanism of NiO-decorated SnO2 nanorod sensors

    Science.gov (United States)

    Sun, Gun-Joo; Lee, Jae Kyung; Lee, Wan In; Dwivedi, Ram Prakash; Lee, Chongmu; Ko, Taegyung

    2017-05-01

    NiO-decorated SnO2 nanorods were synthesized by the thermal evaporation of Sn powders followed by the solvothermal deposition of NiO. A multi-networked p- n heterostructured nanorod sensor was fabricated by dropping the p-NiO-decorated n-SnO2 nanorods onto the interdigited electrode pattern and then annealing. The multi-networked p- n heterostructured nanorod sensor exhibited enhanced response to ethanol compared with the pristine SnO2 nanorod and NiO nanoparticle sensors. The former also exhibited a shorter sensing time for ethanol. Both sensors exhibited selectivity for ethanol over other volatile organic compounds (VOCs) such as HCHO, methanol, benzene and toluene and the decorated sensor exhibited superior selectivity to the other two sensors. In addition, the dominant sensing mechanism is discussed in detail by comparing the sensing properties and current-voltage characteristics of a p-NiO/ n-SnO2 heterostructured nanorod sensor with those of a pristine SnO2 nanorod sensor and a pristine NiO nanoparticle sensor. Of the two competing electronic mechanisms: a potential barrier-controlled carrier transport mechanism at a NiO-SnO2 p- n junction and a surface-depletio n-controlled carrier transport mechanism, the former has some contribution to the enhanced gas sensing performance of the p- n heterostructured nanorod sensor, however, its contribution is not as significant as that of the latter. [Figure not available: see fulltext.

  4. The Effect of Eu Doping on Microstructure, Morphology and Methanal-Sensing Performance of Highly Ordered SnO2 Nanorods Array

    Directory of Open Access Journals (Sweden)

    Yanping Zhao

    2017-11-01

    Full Text Available Layered Eu-doped SnO2 ordered nanoarrays constructed by nanorods with 10 nm diameters and several hundred nanometers length were synthesized by a substrate-free hydrothermal route using alcohol and water mixed solvent of sodium stannate and sodium hydroxide at 200 °C. The Eu dopant acted as a crystal growth inhibitor to prevent the SnO2 nanorods growth up, resulting in tenuous SnO2 nanorods ordered arrays. The X-ray diffraction (XRD revealed the tetragonal rutile-type structure with a systematic average size reduction and unit cell volume tumescence, while enhancing the residual strain as the Eu-doped content increases. The surface defects that were caused by the incorporation of Eu ions within the surface oxide matrix were observed by high-resolution transmission electron microscope (HRTEM. The results of the response properties of sensors based on the different levels of Eu-doped SnO2 layered nanoarrays demonstrated that the 0.5 at % Eu-doped SnO2 layered nanorods arrays exhibited an excellent sensing response to methanal at 278 °C. The reasons of the enhanced sensing performance were discussed from the complicated defect surface structure, the large specific surface area, and the excellent catalytic properties of Eu dopant.

  5. One-step synthesis of N-doped activated carbon with controllable Ni nanorods for ethanol oxidation

    International Nuclear Information System (INIS)

    Shi, Wenjuan; Gao, Haiyan; Yu, Jianguo; Jia, Miaomiao; Dai, Tangming; Zhao, Yongnan; Xu, Jingjing; Li, Guodong

    2016-01-01

    N-doped activated carbons with controllable Ni nanorods (NiNC) catalysts were fabricated by a facile one-pot method for electrocatalytic oxidation of ethanol. The effects of carbon source and Ni precursor for the different microstructures of the forming Ni are discussed in this work. The sucrose and chloride ion are the key factors for forming nanorod-like nickel catalyst. The sizes of Ni nanorods can be controlled by the reactant ratios and influence the catalytic performance for ethanol oxidation. The doped N atoms are also used to improve the catalytic performance for ethanol oxidation. The NiNC–3 catalyst with the proper content and size of Ni exhibits an improved catalytic activity toward ethanol oxidation with a 5 times current density and 16 times rate constant in comparison with the NiNC–1 catalysts. A current density of 47.5 mA cm −2 is generated on NiNC–3 electrode. Furthermore, current density retention of 80.7% suggests an excellent cyclic stability after 1500 cycle on the NiNC–3 electrode. All of these elevated performances can be attributed to the relatively uniform nanorods size, as well as the excellent electrical conductivity and stability of the carbon support.

  6. Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

  7. Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Yuanyao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Mao, Caiying [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Guo, Shengchun [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Zhou, Miao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China)

    2015-06-05

    Highlights: • ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method. • Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells. • The highest η of 1.23% can be achieved in a DSSC with 3 at.% Ga-doped in seeds. • The effects of ZnO seed layers on electron transport properties were investigated. • The enhancement performance of DSSCs contributed to higher dye loading and η{sub cc}. - Abstract: Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4 at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3 at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.

  8. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

    2016-02-29

    The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

  9. Influence of Sn ion doping on the photocatalytic performance of V2O5 nanorods prepared by hydrothermal method

    Science.gov (United States)

    Rajeshwari, S.; Santhosh Kumar, J.; Rajendrakumar, R. T.; Ponpandian, N.; Thangadurai, P.

    2018-02-01

    Pure and different concentrations of Sn4+ doped V2O5 (Sn:V2O5) nanorods were synthesized by hydrothermal method. The Sn:V2O5 nanorods obtained were orthorhombic in structure. No secondary phase was observed up to 10% of Sn doping, but beyond that, there evolved a secondary phase of SnO2. Microstructural analysis revealed the morphology of V2O5 as nanorods and platelets like structure. Presence of V, O and Sn elements in the samples was confirmed by energy dispersive spectroscopy. The V2O5 nanorods have shown a strong absorption in the visible region and the band gap energy was obtained to be varying from 2.21 to 2.26 eV as a function of Sn ion doping. Photocatalytic studies on methylene blue (MB) under visible light irradiation showed that the 3% Sn:V2O5 had effectively degraded MB up to a maximum degradation of 96% and further increase in Sn content had decreased the photodegradation due to higher recombination rate of photogenerated electrons. The mechanism of photodegradation was completely understood and the OH· radicals have played a dominant role in the photodegradation of the organic dyes.

  10. Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

    Science.gov (United States)

    Maji, Tuhin Kumar; Tiwary, Krishna Kanhaiya; Karmakar, Debjani

    2017-05-01

    Doping nature of MoSe2, one of the promising Graphene analogous device material, can be tuned by controlling the concentration of functional groups in Graphene oxide (GO)@MoSe2 heterostructure. In this study, by first-principles simulation, we have observed that GO can be used as a carrier injection layer for MoSe2, where n or p type carriers are introduced within MoSe2 layer depending on the type and concentration of functional moieties in it. Both n and p-type Schottky barrier height modulations are investigated for different modeled configurations of the heterostructure. This combinatorial heterostructure can be a promising material for future electronic device application.

  11. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  12. Trade-off between Zr Passivation and Sn Doping on Hematite Nanorod Photoanodes for Efficient Solar Water Oxidation: Effects of a ZrO2 Underlayer and FTO Deformation.

    Science.gov (United States)

    Subramanian, Arunprabaharan; Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Ryu, Jungho; Park, Jung Hee; Jang, Jum Suk

    2016-08-03

    Herein we report the influence of a ZrO2 underlayer on the PEC (photoelectrochemical) behavior of hematite nanorod photoanodes for efficient solar water splitting. Particular attention was given to the cathodic shift in onset potential and photocurrent enhancement. Akaganite (β-FeOOH) nanorods were grown on ZrO2-coated FTO (fluorine-doped tin oxide) substrates. Sintering at 800 °C transformed akaganite to the hematite (α-Fe2O3) phase and induced Sn diffusion into the crystal structure of hematite nanorods from the FTO substrates and surface migration, shallow doping of Zr atoms from the ZrO2 underlayer. The ZrO2 underlayer-treated photoanode showed better water oxidation performance compared to the pristine (α-Fe2O3) photoanode. A cathodic shift in the onset potential and photocurrent enhancement was achieved by surface passivation and shallow doping of Zr from the ZrO2 underlayer, along with Sn doping from the FTO substrate to the crystal lattice of hematite nanorods. The Zr based hematite nanorod photoanode achieved 1 mA/cm(2) at 1.23 VRHE with a low turn-on voltage of 0.80 VRHE. Sn doping and Zr passivation, as well as shallow doping, were confirmed by XPS, Iph, and M-S plot analyses. Electrochemical impedance spectroscopy revealed that the presence of a ZrO2 underlayer decreased the deformation of FTO substrate, improved electron transfer at the hematite/FTO interface and increased charge-transfer resistance at the electrolyte/hematite interface. This is the first systematic investigation of the effects of Zr passivation, shallow doping, and Sn doping on hematite nanorod photoanodes through application of a ZrO2 underlayer on the FTO substrate.

  13. Sulfur and Nitrogen co-doped graphene quantum dot decorated ZnO nanorod/polymer hybrid flexible device for photosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Hmar, Jehova Jire L.; Majumder, Tanmoy; Dhar, Saurab; Mondal, Suvra Prakash, E-mail: suvraphy@gmail.com

    2016-08-01

    S and N co-doped graphene quantum dots (S,N-GQDs) have been synthesized by a hydrothermal process. S,N-GQDs are made up of 1–5 monolayer of graphene with average diameter 13.3 nm. The absorption peaks at 336 and 621 nm, are attributed to n → Π{sup ⁎} transitions of electrons in C=O and S=O bonds, respectively. S,N-GQDs are highly luminescent and showed excitation dependent emission behaviors. Hybrid photosensing device has been fabricated with S,N-GQD sensitized ZnO nanorods and a conjugated polymer poly(3-hexylthiophene) (P3HT). S,N-GQD decorated ZnO nanorod demonstrated higher photoresponse compared to pristine ZnO nanorod based device. S,N-GQD/ZnO nanorod hybrid device showed superior incident photon to electron conversion efficiency (IPCE), photoresponsivity and detectivity compared to the control samples. The flexibility study of the samples has been monitored by measuring current-voltage characteristics at different bending angles. - Highlights: • S and N co-doped graphene quantum dots (S,N-GQDs) were synthesized. • ZnO nanorods were grown on ITO coated flexible PET substrates. • S,N-GQDs were attached with ZnO nanorods and used as a green sensitizer. • Photosensing properties of S,N-GQD/ZnO and P3HT polymer hybrid device was studied.

  14. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

    Science.gov (United States)

    Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

    2018-04-01

    This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

  15. Effect of Nb-doped TiO{sub 2} on nanocomposited aligned ZnO nanorod/TiO{sub 2}:Nb for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saurdi, I., E-mail: saurdy788@gmail.com; Ishak, A. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM),40450 Shah Alam, Selangor (Malaysia); UiTM Sarawak Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shafura, A. K.; Azhar, N. E. A.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM),40450 Shah Alam, Selangor (Malaysia); Malek, M. F.; Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM),40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), (Centre for Nano-Science and Nano-Technology), Institute of Science, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, A. H. Salman; Khan, Haseeb A. [Department of Biochemistry, College of Science, Bldg. 5, King Saud University (KSU) P.O: 2455 Riyadh 1145 (Saudi Arabia)

    2016-07-06

    The Nb-doped TiO{sub 2} films were deposited on glass substrate at different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively and their electrical and structural properties were investigated. Subsequently, the Nb-doped TiO{sub 2} films were deposited on top of aligned ZnO Nanorod on ITO glass substrates using spin coating technique. The nanocomposited aligned ZnO nanorod/Nb-doped TiO{sub 2} (TiO{sub 2}:Nb) were coated with different Nb concentrations of 0 at.%, 1 at.%, 3 at.%, 5 at.% and 7 at.%, respectively. The Dye-sensitized solar cells were fabricated from the nanocomposited aligned ZnO nanorod/TiO{sub 2}:Nb photoanodes and their effects on the performance of the DSSCs were investigated. From the solar simulator measurement of DSSC the solar energy conversion efficiency (η) of 5.376% under AM 1.5 was obtained for the ZnO nanorod/TiO{sub 2}:Nb-5at.%.

  16. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  17. Doping effects of Co2+ ions on ZnO nanorods and their photocatalytic properties

    International Nuclear Information System (INIS)

    Qiu Xiaoqing; Li Guangshe; Sun Xuefei; Li Liping; Fu Xianzhi

    2008-01-01

    A series of Zn 1-x Co x O nanorods with dopant content ranging from x = 0.00 to 0.10 was prepared by a wet chemical method. All Zn 1-x Co x O samples were investigated by x-ray diffraction, transmission electron microscopy, energy-dispersion x-ray line mapping analysis, and UV-visible absorption spectroscopy. It was found that Co 2+ ions were homogeneously substituted for Zn 2+ ions in ZnO nanorods. Rhodamine B degradation was used as a probe reaction to evaluate the effect of Co 2+ doping on ZnO nanorods and photocatalytic performance under UV light and visible light irradiation. Co 2+ ions acted as the trapping or recombination centers for electrons and holes, leading to a reduction in photodegradation efficiency under UV light illumination. Alternatively, Co 2+ ions enhanced the optical absorption and produced the photoinduced carriers under visible illumination in terms of two charge transfer transitions involving Co 2+ ions. Consequently, Co 2+ ions substituted in the lattice of ZnO nanorods significantly improved the visible light photocatalytic activity

  18. Synergistic effect on the photocatalytic activity of N-doped TiO{sub 2} nanorods synthesised by novel route with exposed (110) facet

    Energy Technology Data Exchange (ETDEWEB)

    Bakar, Shahzad Abu, E-mail: shazad_158@yahoo.com [Department of Chemistry, Federal University of São Carlos, Rod. Washington Luiz, km 235, CEP: 13565-905 São Carlos, SP (Brazil); Embrapa CNPDIA, Rua XV de Novembro, 1452, 13560-970, São Carlos, SP (Brazil); Byzynski, Gabriela; Ribeiro, Caue [Embrapa CNPDIA, Rua XV de Novembro, 1452, 13560-970, São Carlos, SP (Brazil)

    2016-05-05

    This paper describes a facile route for the preparation of visible-light-active N-doped TiO{sub 2} nanorods arrays at low temperature by a template-free oxidant peroxide method (OPM) and crystallized under hydrothermal treatment. The samples were characterized for structural, morphological and optical properties by XPS, FE-SEM, HRTEM, XRD, Raman and UV–vis spectroscopy. XPS analysis revealed that N dopant atoms were mainly added at the interstitial sites into TiO{sub 2} lattice structure and few N atoms were present as substitutional sites of nitrogen atoms and/or at molecularly chemisorbed γ-N{sub 2} molecules. FE-SEM and HR-TEM analyses show that doping does not influenced the cylindrical architecture of the nanorods. However, N doping causes an obvious red shift in the band edge which increases visible region absorption. The photocatalytic activity of pristine and N-doped TiO{sub 2} photocatalysts was tested for the degradation of methyl orange (MO) under UV and visible light irradiation. The N-doped TiO{sub 2} photocatalysts showed an efficient photocatalytic activity for methyl orange degradation under UV and visible-light irradiation as compared to pristine TiO{sub 2}. Multiple cycles for the MO photodegradation were performed without a decrease in the photocatalytic activity. PEC studies showed that photocurrent densities of 8.2 μA cm{sup −2} and 7.0 μA cm{sup −2} were obtained under UV and visible-light illumination at a potential of 0.8 V. - Highlights: • The pristine and N-doped TiO{sub 2} nanorods were prepared and characterized for structural and optical properties. • As-prepared samples showed enhanced photocatalytic activity toward the photodegradation of MO dye. • Photo-electrochemical measurements were done to investigate N-doped TiO{sub 2} nanorods capability for water splitting.

  19. An Au/Si hetero-nanorod-based biosensor for Salmonella detection

    Energy Technology Data Exchange (ETDEWEB)

    Fu Junxue; Zhao Yiping [Physics and Astronomy Department, University of Georgia, Athens, GA 30602 (United States); Park, Bosoon; Siragusa, Greg [USDA, ARS, Russell Research Center, Athens, GA 30605 (United States); Jones, Les; Tripp, Ralph [Department of Infectious Diseases, College of Veterinary Medicine, University of Georgia, Athens, GA 30602 (United States); Cho, Yong-Jin [Korea Food Research Institute, Songnam (Korea, Republic of)], E-mail: zhaoy@physast.uga.edu

    2008-04-16

    We present a novel and effective food-borne bacteria detection method. A hetero-structured silicon/gold nanorod array fabricated by the glancing angle deposition method is functionalized with anti-Salmonella antibodies and organic dye molecules. Due to the high aspect ratio nature of the Si nanorods, dye molecules attached to the Si nanorods produce an enhanced fluorescence upon capture and detection of Salmonella. This bio-functional hetero-nanorod detection method has great potential in the food safety industry as well as in biomedical diagnostics.

  20. Mg{sub 2}Sn heterostructures on Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Dózsa, L., E-mail: dozsa@mfa.kfki.hu [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Galkin, N.G. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation); Pécz, B.; Osváth, Z.; Zolnai, Zs. [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Németh, A. [Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, 1525 Budapest, P.O.B. 49 (Hungary); Galkin, K.N.; Chernev, I.M. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Dotsenko, S.A. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation)

    2017-05-31

    Highlights: • Investigations show that the nanostructures have significant changes during the applied regular experimental investigations. • It is especially true for transmittance electron microscopy, where the investigated layers have to be thinned near to the nanostructure size. • The time order of the applied experimental investigation has a dominant effect on the experimetal results. - Abstract: Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg{sub 2}Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg{sub 2}Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg{sub 2}Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg{sub 2}Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg{sub 2}Sn layer. The measurements indicate the necessity of protective layer grown over the Mg{sub 2}Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

  1. Influence of fluorescence of Eu(dbm)3phen doped films by gold nanorods

    International Nuclear Information System (INIS)

    Wang, Qingru; Shi, Qiang; Li, Shuhong; Zhang, Dong; Wang, Wenjun

    2016-01-01

    The gold nanorods (AuNRs) were precipitated on Eu(dbm) 3 phen doped films by different spin rates. The plasmonic enhancement and quenching effects of gold nanorods on the fluorescence of Eu(dbm) 3 phen were both demonstrated. The enhancement on the fluorescence is sensitive to the distribution of the AuNRs. Both fluorescence enhancement mechanisms, i.e. increase of the intense absorption of ligands and increase of quantum efficiency, promote the 20 fold enhancement, at which the excitation wavelength red-shifts from 362 nm to 372 nm. Higher absorption of ligands in the complex due to the AuNRs caused the bathochromic shift of excitation peak. The quenching factor at 612 nm reached to 0.47.

  2. Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

    Science.gov (United States)

    Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

    2017-12-01

    In this paper, N-doped TiO 2 (N-TiO 2 ) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO 2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO 2 . To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO 2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO 2 than un-doped TiO 2 . The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO 2 than to un-doped TiO 2 . Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO 2 than that on un-doped TiO 2 .

  3. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    Science.gov (United States)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    2017-12-05

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  4. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

    Science.gov (United States)

    Zhao, Chong-Jun; Liu, Yang; Zhang, Jing-Yan; Sun, Li; Ding, Lei; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Yu, Guang-Hua

    2012-08-01

    To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 °C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 °C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement.

  5. Influence of Zr doping on structure and morphology of TiO2 nanorods prepared using hydrothermal method

    Science.gov (United States)

    Muslimin, Masliana; Jumali, Mohammad Hafizuddin; Tee, Tan Sin; Beng, Lee Hock; Hui, Tan Chun; Chin, Yap Chi

    2018-04-01

    The aim of this work is to investigate the effect of Zr doping on TiO2 nanostructure. TiO2 nanorods thin films with different Zr-doping concentrations (6 × 10-3 M, 13 × 10-3 M and 25 × 10-3 M) were successfully prepared using a simple hydrothermal method. The structural and morphological properties of the samples were evaluated using XRD and FESEM respectively. The XRD results revealed that the TiO2 in all samples stabilized as rutile phase. The FESEM micrographs confirmed that TiO2 exist as square like nanorods with blunt tips. Although the crystallographic nature remains unchanged, the introduction of Zr has altered the surface density, structure and morphology of TiO2 which subsequently will have significant effect on its properties.

  6. Nonenzymetic glucose sensing using carbon functionalized carbon doped ZnO nanorod arrays

    Science.gov (United States)

    Chakraborty, Pinak; Majumder, Tanmoy; Dhar, Saurab; Mondal, Suvra Prakash

    2018-04-01

    Fabrication of highly sensitive, long stability and low cost glucose sensors are attractive for biomedical applications and food industries. Most of the commercial glucose sensors are based on enzymatic detection which suffers from problems underlying in enzyme activities. Development of high sensitive, enzyme free sensors is a great challenge for next generation glucose sensing applications. In our study Zinc oxide nanorod sensing electrodes have been grown using low cost hydrothermal route and their nonenzymatic glucose sensing properties have been demonstrated with carbon functionalized, carbon doped ZnO nanorods (C-ZnO NRs) in neutral medium (0.1M PBS, pH 7.4) using cyclic voltammetry and amperometry measurements. The C-ZnO NRs electrodes demonstrated glucose sensitivity˜ 13.66 µAmM-1cm-2 in the concentration range 0.7 - 14 mM.

  7. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    Science.gov (United States)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-07-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  8. Cu-implanted ZnO nanorods array film: An aqueous synthetic approach

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaya Kumar, E-mail: ajayaksingh_au@yahoo.co.in [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Thool, Gautam Sheel [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Singh, R.S. [Department of Physics, Govt. D.T. College, Utai, Durg, Chhattisgarh (India); Singh, Surya Prakash, E-mail: spsingh@iict.res.in [Inorganic and Physical Chemistry Division, CSIR-Indian Institute of Chemical Technology, Uppal road, Tarnaka, Hyderabad 500007 (India)

    2015-01-05

    Highlights: • Cu doped ZnO nanorods were synthesized using low temperature aqueous solution method. • We demonstrated the capping action of TEA via theoretical simulation. • Raman analysis revealed the presence of tensile strain in Cu doped ZnO nanorods. • Growth rate was found to be high in Cu doped ZnO nanorods. - Abstract: Pure and Cu doped ZnO nanorods array are synthesized via two step chemical bath deposition method. The seed layer is prepared by successive ionic layer adsorption reaction (SILAR) method. The synthesized materials have been systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. SEM pictures show the existence of vertically well aligned hexagonal ZnO nanorods. EDAX spectrum confirms the presence of Cu in ZnO nanorods. High intense peak of (0 0 2) plane and E{sub 2}{sup high} mode for XRD and Raman spectrum respectively, suggest the ZnO nanorods are adopted c-axis orientation perpendicular to substrate. XRD and Raman analysis shows the presence of tensile strain in Cu doped ZnO nanorods. Effect of Cu doping on lattice constants, unit cell volume and Zn–O bond length of ZnO nanorods have also been studied. Room temperature PL measurement exhibits two luminescence bands in the spectra i.e. UV emission centered at 3.215 eV and a broad visible band. Theoretical investigation for capping action of triethanolamine is done by Hartree–Fock (HF) method with 3-21G basis set using Gaussian 09 program package.

  9. Gold nanorod@iron oxide core-shell heterostructures: synthesis, characterization, and photocatalytic performance.

    Science.gov (United States)

    Li, Yue; Zhao, Junwei; You, Wenlong; Cheng, Danhong; Ni, Weihai

    2017-03-17

    Iron oxides are directly coated on the surface of cetyl-trimethylammonium bromide (CTAB)-capped gold nanorods (AuNRs) in aqueous solutions at room temperature, which results in AuNR@Fe 2 O 3 , AuNR@Fe 3 O 4 , and AuNR@Fe 2 O 3 @Fe 3 O 4 core-shell heterostructures. The iron oxide shells are uniform, smooth, with characteristic porous structure, and their thickness can be readily tuned. The shell formation is highly dependent on the reaction parameters including pH and CTAB concentration. The Fe 2 O 3 shell is amorphous and exhibits nearly zero remanence and coercivity, while the Fe 3 O 4 shell is ferromagnetic with a low saturation magnetization of about 0.5 emu g -1 due to its low crystallinity and the porous structure. At elevated temperatures achieved by plasmonic heating of the Au core, the Fe 2 O 3 shell transforms from amorphous to γ-Fe 2 O 3 and α-Fe 2 O 3 phases, while the Fe 3 O 4 phase disappears because of the oxidation of Fe 2+ . A 1.4-fold increase of photocatalytic performance is observed due to the plasmonic resonance provided by the Au core. The photocatalytic efficiency of Fe 3 O 4 is about 1.7-fold higher than Fe 2 O 3 as more surface defects are present on the Fe 3 O 4 shell, promoting the adsorption and activation of reagents on the surface during the catalytic reactions. This approach can be readily extended to other nanostructures including Au spherical nanoparticles and nanostars. These highly uniform and multifunctional core-shell heterostructures can be of great potential in a variety of energy, magnetic, and environment applications.

  10. Ag nanoparticles-decorated ZnO nanorod array on a mechanical flexible substrate with enhanced optical and antimicrobial properties

    Science.gov (United States)

    Chen, Yi; Tse, Wai Hei; Chen, Longyan; Zhang, Jin

    2015-03-01

    Heteronanostructured zinc oxide nanorod (ZnO NR) array are vertically grown on polydimethylsiloxane (PDMS) through a hydrothermal method followed by an in situ deposition of silver nanoparticles (Ag NPs) through a photoreduction process. The Ag-ZnO heterostructured nanorods on PDMS are measured with an average diameter of 160 nm and an average length of 2 μm. ZnO NRs measured by high-resolution transmission electron microscope (HRTEM) shows highly crystalline with a lattice fringe of 0.255 nm, which corresponds to the (0002) planes in ZnO crystal lattice. The average diameter of the Ag NPs in situ deposited on the ZnO NRs is estimated at 22 ± 2 nm. As compared to the bare ZnO NRs, the heterostructured Ag-ZnO nanorod array shows enhanced ultraviolet (UV) absorption at 440 nm, and significant emission in the visible region (λem = 542 nm). In addition, the antimicrobial efficiency of Ag-ZnO heterostructured nanorod array shows obvious improvement as compared to bare ZnO nanorod array. The cytotoxicity of ZnO nanorod array with and without Ag NPs was studied by using 3 T3 mouse fibroblast cell line. No significant toxic effect is imposed on the cells.

  11. Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

    Directory of Open Access Journals (Sweden)

    Valentina Cantatore

    2017-10-01

    Full Text Available Enhanced superconductivity is sought by employing heterostructures composed of boron-doped graphene and iron selenide. Build-up of a composite manifold of near-degenerate noninteracting states formed by coupling top-of-valence-band states of FeSe to bottom-of-conduction-band states of boron-doped graphene is demonstrated. Intra- and intersubsystem excitons are explored by means of density functional theory in order to articulate a normal state from which superconductivity may emerge. The results are discussed in the context of electron correlation in general and multi-band superconductivity in particular.

  12. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  13. Random laser based on Rhodamine 6G (Rh6G doped poly(methyl methacrylate (PMMA films coating on ZnO nanorods synthesized by hydrothermal oxidation

    Directory of Open Access Journals (Sweden)

    Hua Zhang

    Full Text Available Random laser based on Rh6G doped PMMA thin films coating on ZnO nanorods synthesized by a simple hydrothermal oxidation method has been demonstrated. This kind of random laser medium is based on waveguide structure consisting of ZnO nanorods, Rh6G doped PMMA film and air. By controlling the time of hydrothermal oxidation reaction, wheat-like and hexagonal prism ZnO nanorods have been successfully fabricated. The emission spectra of these gain mediums based on different ZnO nanorods are different. The one based on wheat-like ZnO nanorods mainly exhibits amplified spontaneous emission, and the other one based on hexagonal prism ZnO nanorods shows random laser emission. The threshold of the random laser medium is about 73.8 μJ/pulse, and the full width at half maximum (FWHM is around 2.1 nm. The emission spectra measured at different detecting angles reveal that the output direction is strongly confined in ±30° by the waveguide effect. Our experiments demonstrate a promising method to achieve organic random laser medium. Keywords: Random laser, ZnO nanorods, Hydrothermal oxidation, Rhodamine 6G (Rh6G, Poly(methyl methacrylate (PMMA

  14. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  15. Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

    Science.gov (United States)

    Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

    2017-11-01

    This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

  16. Electrochemical synthesis of p-Cu_2O/n-ZnO nanorods hetero-junction for photovoltaic application

    International Nuclear Information System (INIS)

    Rokade, A. V.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-01-01

    Development of high performance visible light responsive solar cell materials has attracted wide interest due to their potential applications in the energy industries. In this work, ZnO nanorods films were successfully prepared on the ITO coated glass substrates via simple three electrode electrochemical deposition route. The Cu_2O nanoparticles were then electrodeposited on the surface of ZnO nanorods to form p-Cu_2O/n-ZnO core-shell hetero-structure. The synthesized ZnO, Cu_2O films and p-Cu_2O/n-ZnO hetero-structure were characterized by low angle x-ray diffraction, scanning electron microscopy, and UV-Visible spectrophotometer. Due to the hierarchical morphologies and core-shell structure, p-Cu_2O/n-ZnO hetero-structure shows a prominent visible-light-driven photocatalytic performance under the low intensity light irradiation. The obtained results suggest that it is possible to synthesize ZnO nanorods, Cu_2O films and p-Cu_2O/n-ZnO core-shell hetero-structure by a simple, cost effective and environment friendly electrodeposition process which can be useful for water splitting and solar cell device fabrication.

  17. Novel and facile microwave-assisted synthesis of Mo-doped hydroxyapatite nanorods: Characterization, gamma absorption coefficient, and bioactivity.

    Science.gov (United States)

    Abutalib, M M; Yahia, I S

    2017-09-01

    In the current work, the authors report the microwave-assisted synthesis Molybdenum-doped (from 0.05 to 5wt%) hydroxyapatite (HAp) for the first time. The morphology of Mo-doped HAp is nanorods of diameter in the range of 25-70nm and length in the range of 25nm to 200nm. The good crystalline nature was confirmed from X-ray diffraction patterns and also lattice parameters, grain size, strain and dislocation density were determined. The crystallite size was found to be in the range 16 to 30nm and crystallinity was found to be enhanced from 0.5 to 0.7 with doping. The field emission SEM micrographs show that the morphology of the synthesized nanostructures of pure and Mo-doped HAp are nanorods of few nanometers. The vibrational modes were identified using the FT-Raman and FT-IR spectroscopy. The dielectric properties were studied and the AC electrical conductivity was found to be increased with increasing the concentration of Mo ions doping in HAp. Moreover, antimicrobial studies were also carried out to understand the anti-bacterial and anti-fungi properties. The results suggest that it may be a good bio-ceramics material for bio-medical applications. Mo-doped HAp was subjected to the gamma irradiation produced from Cs-137 (662keV) and its related parameters such as linear absorption coefficient, the half-value layer (HVL) and the tenth value layer TVL were calculated and analyzed. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  19. In-Doped ZnO Hexagonal Stepped Nanorods and Nanodisks as Potential Scaffold for Highly-Sensitive Phenyl Hydrazine Chemical Sensors.

    Science.gov (United States)

    Umar, Ahmad; Kim, Sang Hoon; Kumar, Rajesh; Al-Assiri, Mohammad S; Al-Salami, A E; Ibrahim, Ahmed A; Baskoutas, Sotirios

    2017-11-21

    Herein, we report the growth of In-doped ZnO (IZO) nanomaterials, i.e., stepped hexagonal nanorods and nanodisks by the thermal evaporation process using metallic zinc and indium powders in the presence of oxygen. The as-grown IZO nanomaterials were investigated by several techniques in order to examine their morphological, structural, compositional and optical properties. The detailed investigations confirmed that the grown nanomaterials, i.e., nanorods and nanodisks possess well-crystallinity with wurtzite hexagonal phase and grown in high density. The room-temperature PL spectra exhibited a suppressed UV emissions with strong green emissions for both In-doped ZnO nanomaterials, i.e., nanorods and nanodisks. From an application point of view, the grown IZO nanomaterials were used as a potential scaffold to fabricate sensitive phenyl hydrazine chemical sensors based on the I-V technique. The observed sensitivities of the fabricated sensors based on IZO nanorods and nanodisks were 70.43 μA·mM -1 cm -2 and 130.18 μA·mM -1 cm -2 , respectively. For both the fabricated sensors, the experimental detection limit was 0.5 μM, while the linear range was 0.5 μM-5.0 mM. The observed results revealed that the simply grown IZO nanomaterials could efficiently be used to fabricate highly sensitive chemical sensors.

  20. A comparative study of pure and copper (Cu)-doped ZnO nanorods for antibacterial and photocatalytic applications with their mechanism of action

    Energy Technology Data Exchange (ETDEWEB)

    Bhuyan, Tamanna [Amity University, Uttar Pradesh, Amity Institute of Microbial Technology (India); Khanuja, Manika, E-mail: manikakhanuja@gmail.com; Sharma, R.; Patel, S.; Reddy, M. R.; Anand, S. [Amity University, Uttar Pradesh, Amity Institute of Nanotechnology (India); Varma, A. [Amity University, Uttar Pradesh, Amity Institute of Microbial Technology (India)

    2015-07-15

    The present study reports the synthesis of pure and Cu-doped ZnO nanorods for antibacterial and photocatalytic applications. The samples were synthesized by simple, low cost mechanical-assisted thermal decomposition process. The synthesized materials were characterized by scanning electron microscopy, UV–Visible spectroscopy, and photoluminescence studies. The antibacterial activity of characterized samples was determined against Gram-positive bacteria such as Staphylococcus aureus and Streptococcus pyogenes and Gram-negative bacteria such as Escherichia coli using shake flask method with respect to time. The significant antibacterial activity was perceived from scanning electron micrographs that clearly revealed bacterial cell lysis resulting in the release of cytoplasmic content followed by cell death. The degradation of methylene blue was used as a model organic dye for photocatalytic activity. The present study demonstrates the superior photocatalytic and antibacterial activity of Cu-doped ZnO nanorods with respect to pure ZnO nanorods.

  1. Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating.

    Science.gov (United States)

    Padilha, J E; Fazzio, A; da Silva, Antônio J R

    2015-02-13

    In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

  2. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  3. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  4. Fabrication and characterization of self-doped poly(aniline-co-anthranilic acid) nanorods in bundles

    International Nuclear Information System (INIS)

    Han Dongxue; Song Jixia; Ding Xuefeng; Xu Xiaoyu; Niu Li

    2007-01-01

    Poly(aniline-co-anthranilic acid) (PANANA) nanorods in bundles was prepared successfully in an alcohol/aqueous media without assistance of any other kinds of acids. Anthranilic acid played all roles of monomer, acid-media provider, and dopant in the reaction system, and ammonium persulfate (APS) served as the oxidant. The morphologies of PANANA nanorods in bundles were investigated by scanning electron microscopy (SEM). Influences of the monomer molar ratio on the resulting morphology were investigated. Moreover the formation mechanism of the nanostructured copolymer was proposed. FT-IR, UV-vis and X-ray diffraction (XRD) measurements were used to confirm the molecular and electrical structure of the self-doped PANANA. The intrinsic properties, such as conductivity, electrochemical redox activity and room-temperature solubility of the resulting copolymer were explored

  5. Effect of growth time to the properties of Al-doped ZnO nanorod arrays

    Science.gov (United States)

    Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

    2018-05-01

    Aluminum (Al)-doped zinc oxide (ZnO) nanorod array films were successfully deposited at different growth time on zinc oxide (ZnO) seed layer coated glass substrate using sol-gel immersion method. The morphology images of the films showed that the thicknesses of the films were increased parallel with the increment of growth period. The surface topology of the films displayed an increment of roughness as the growth period increased. Optical properties of the samples exposed that the percentage of transmittances reduced at higher growth time. Besides, the Urbach energy of the films slightly increased as the immersion time increased. The current-voltage (I-V) measurement indicated that the resistance increased as the immersion time increased owing to the appearance of intrinsic layer on top of the nanorods.

  6. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  7. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  8. Effect of phosphorus incorporation on morphology and optical properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Fan, Donghua; Zhang, Rong; Wang, Xianghu

    2011-01-01

    Graphical abstract: XPS spectra of the P-doped ZnO nanorods: (a) Zn 2p, (b) O 1s, and (c) P 2p spectra. The red curve in c is the Gauss-fitting curve. (d) Raman spectra of P-doped (curve 1) and pure (curve 2) ZnO nanorods. Research highlights: → P-doped ZnO nanorods have been prepared on Si substrates without any catalyst. → The introduction of phosphorus leads to the growth of tapered tip in the nanorods. → The formation of tapered tip is attributed to the relaxation of the lattice strain along the radial direction. → The strong ultraviolet peak is connected with the phosphorus acceptor-related emissions. -- Abstract: Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.

  9. 3D Bi2S3/TiO2 cross-linked heterostructure: An efficient strategy to improve charge transport and separation for high photoelectrochemical performance

    Science.gov (United States)

    Han, Minmin; Jia, Junhong

    2016-10-01

    A novel 3D cross-linked heterostructure of TiO2 nanorods connecting with each other via ultrathin Bi2S3 nanosheets is constructed by a facile and effective strategy. The growth mechanism has been investigated and proposed based on the evolution of microstructure by changing the reaction parameters. Benefiting from the unique cross-linked heterostructure, the as-prepared Bi2S3 nanosheets modified TiO2 nanorods arrays could achieve a high energy conversion efficiency of 3.29% which is the highest value to date for Bi2S3-only sensitized solar cells as the reported highest value is 2.23% and other reported values are less than 1%. Furthermore, the photoelectrochemical studies clearly reveal that the novel cross-linked heterostructure exhibits much better activity than 0D nanoparticles decorated TiO2 nanorods under visible light irradiation, which may be primarily ascribed to the efficient electron transfer from 2D ultrathin Bi2S3 nanosheets to 1D TiO2 nanorod arrays. The promising results in this work confirm the advantages of cross-linked heterostructure and also undoubtedly offer an attractive synthesis strategy to fabricate other nanorod-based hierarchical architecture as well as nano-devices for solar energy conversion.

  10. Pr3+ doped biphasic TiO2 (rutile-brookite) nanorod arrays grown on activated carbon fibers: Hydrothermal synthesis and photocatalytic properties

    Science.gov (United States)

    Li, Min; Zhang, Xiaomei; Liu, Ying; Yang, Yi

    2018-05-01

    Praseodymium-doped biphasic TiO2 (rutile-brookite) nanorod arrays (Pr-TiO2 NRAs) were successfully prepared via a two-step hydrothermal reaction on activated carbon fibers (ACFs) which pre-coated with TiO2 nanoparticles at first step. The bicrystalline arrays grown on ACFs are primarily constructed by the well-aligned TiO2 nanorods growing along [0 0 1] direction, which were indicated by the results of SEM and XRD. The nanorods are uniform in diameter and length with about 250 nm and 2.5 μm. The composite photocatalyst with high specific surface area and well-aligned nanostructure are beneficial to enhance the adsorption capacity and even help to suppress electron-hole recombination effectively, which consequently revealed much better (2 times) catalytic performance than that of commercially available P25 TiO2 on methylene blue(MB) photodegradation. In addition, the existence of praseodymium in TiO2 gives rise to shift of absorption edge towards long wavelength, which was indicated by the results of UV-vis DRS. Photodegradation results reveal that Pr-doping significantly improves the activity of TiO2, which was 20% higher than that of undoped TiO2 NRAs for the photodegradation of MB in aqueous medium under visible light irradiation. Meanwhile, the doped amount of Pr had a tiny influence on the photocatalytic performance of the composites. In our experiment, 3% Pr-doped molar concentration was proven to be the relatively optimal dopant concentration for the doping of TiO2 NRAs. Moreover, the photocatalyst grown on ACFs substrates is favorable to reuse and photodegradation rate kept on 76% even after 4 times of reuse.

  11. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications.

    Science.gov (United States)

    Yahia, I S; Shkir, Mohd; AlFaify, S; Ganesh, V; Zahran, H Y; Kilany, Mona

    2017-03-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15nm to 62nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis>Candida albicans>Shigella dysenteriae. Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  13. Carbon doped InAlAs/InGaAs/InAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Lande g-factor (around 15 in InAs) and the large Rashba effect. Here, we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. We got a two-dimensional hole gas with a hole density of p = 1.06*10{sup 12} cm{sup -2} and a hole mobility of 7.26*10{sup 3} cm{sup 2}/Vs. Magnetotransport measurements on L-shaped Hall bars along [011], [01-1], [010] and [001] crystal directions exhibit well-developed Shubnikov-de-Haas oscillations and quantum Hall plateaus, indicating the high quality of the material. In the field range from minus 6T to 6T the longitudinal resistance is superimposed with a negative parabolic magnetoresistance background. The minimum of the longitudinal resistance at B = 0T decreases with increasing temperature, and hence, is a sign for weak antilocalization.

  14. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Shkir, Mohd, E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); AlFaify, S.; Ganesh, V. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Zahran, H.Y. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Kilany, Mona [Department of Biology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Department of Microbiology, National Organization for Drug Control and Research (NODCAR), Cairo (Egypt)

    2017-03-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te

  15. Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications

    International Nuclear Information System (INIS)

    Yahia, I.S.; Shkir, Mohd; AlFaify, S.; Ganesh, V.; Zahran, H.Y.; Kilany, Mona

    2017-01-01

    In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te

  16. Anomalous magnetism of superconducting Mg-doped InN film

    Directory of Open Access Journals (Sweden)

    P. H. Chang

    2016-02-01

    Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

  17. Surface polyPEGylation of Eu3+ doped luminescent hydroxyapatite nanorods through the combination of ligand exchange and metal free surface initiated atom transfer radical polymerization

    Science.gov (United States)

    Zeng, Guangjian; Liu, Meiying; Heng, Chunning; Huang, Qiang; Mao, Liucheng; Huang, Hongye; Hui, Junfeng; Deng, Fengjie; Zhang, Xiaoyong; Wei, Yen

    2017-03-01

    The Eu3+ doped luminescent hydroxyapatite (HAp) nanorods with uniform size and morphology can be synthesized by hydrothermal route. However, these HAp nanorods are coated by hydrophobic oleylamine, which makes them difficult to be dispersed in aqueous solution and impede their biomedical applications. In this work, Eu3+ doped luminescent polymers functionalized HAp nanorods were prepared through the combination of ligand exchange reaction and metal free surface initiated atom transfer radical polymerization (ATRP) method. In this procedure, the amino group functionalized HAp nanorods were first prepared by ligand exchange reaction using adenosine monophosphate (AMP) as ligand. Then the Br-containing initiators (HAp-Br) were introduced onto the surface of HAp-AMP nanorods through the amidation reaction. Finally, polymers functionalized HAp nanorods were prepared by metal free ATRP method using poly(ethylene glycol) methacrylate (PEGMA) as monomer and 10-phenylphenothiazine (PTH) as organic photocatalyst. The properties of these obtained HAp nanocomposites (HAP-polyPEGMA nanorods) were characterized by means of transmission electron microscopy, Fourier transformed infrared spectroscopy, X-ray photoelectron spectroscopy and thermogravimetric analysis in detail. The cell imaging of these HAP-polyPEGMA nanorods was examined using laser scanning confocal microscope to evaluate their biomedical applications. We demonstrated for the first time that hydrophobic luminescent HAp nanorods can be functionalized with polyPEGMA through the combination of ligand exchange reaction and metal free surface initiated ATRP. As compared with the traditional ATRP, the metal free ATRP can overcome the toxic and fluorescence quenching effects of metal catalysts such as copper ions. More importantly, the strategy described in this work should also be utilized for fabrications of many other luminescent polymer nanocomposites due to its good monomer adoptability.

  18. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    International Nuclear Information System (INIS)

    Sasani, Alireza; Baktash, Ardeshir; Mirabbaszadeh, Kavoos; Khoshnevisan, Bahram

    2016-01-01

    Highlights: • Formation energy of Mg and Mg-Nb co-doped TiO_2 anatase surface (101) is studied. • Effect of Mg defect to the TiO_2 anatase (101) surface and bond length distribution of the surface is studied and it is shown that Mg defects tend to stay far from each other. • Effect of Mg and Nb to the bond length distribution of the surface studied and it is shown that these defects tend to stay close to each other. • Effects of Mg and Mg-Nb defects on DSSCs using TiO_2 anatase hosting these defects are studied. - Abstract: In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO_2 anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO_2 surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase J_S_C of the surface while slightly decreasing V_O_C compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  19. Enormous enhancement of ZnO nanorod photoluminescence

    International Nuclear Information System (INIS)

    Wang, Y.H.; Duan, W.J.; Wu, Z.L.; Zheng, D.; Zhou, X.W.; Zhou, B.Y.; Dai, L.J.; Wang, Y.S.

    2012-01-01

    ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation. - Highlights: ► ZnO nanorod arrays were grown on quartz slices in solution at 90 °C. ► The nanorods were capped by ZnO:Mg layers to form core/shell structures. ► ZnO:MgO shells suppress the green emission and enhance the UV emission intensity by 38 times. ► The enhancement depends on the Mg content in the shells. ► Exposing the nanorods to 325 laser beam improves the UV emission efficiently. ► Capping and 325 nm laser beam irradiation could enhance the nanorod UV emission intensity by 71 times.

  20. Preparation and characterisation of Os doped MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Grivel, J.-C., E-mail: jean@dtu.dk; Namazkar, S.; Alexiou, A.; Holte, O.J.

    2014-12-15

    Highlights: • Polycrystalline osmium doped MgB{sub 2} samples were prepared by solid state route. • Up to 1 at.% Mg can be replaced by Os in the MgB{sub 2} lattice. • T{sub c} decreases at a rate of 2.1 K/at.% Os upon doping. - Abstract: Polycrystalline samples with Mg{sub 1−x}Os{sub x}B{sub 2.04} nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB{sub 2} lattice. Beyond this doping level, unreacted Os and Mg-rich Mg–Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.

  1. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    Energy Technology Data Exchange (ETDEWEB)

    Sasani, Alireza [Department of Science, Karaj Islamic Azad University, Karaj, Alborz, P.O. Box 31485-313 (Iran, Islamic Republic of); Baktash, Ardeshir [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of); Mirabbaszadeh, Kavoos, E-mail: mirabbas@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, Tehran, P. O. Box 15875-4413 (Iran, Islamic Republic of); Khoshnevisan, Bahram [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of)

    2016-10-30

    Highlights: • Formation energy of Mg and Mg-Nb co-doped TiO{sub 2} anatase surface (101) is studied. • Effect of Mg defect to the TiO{sub 2} anatase (101) surface and bond length distribution of the surface is studied and it is shown that Mg defects tend to stay far from each other. • Effect of Mg and Nb to the bond length distribution of the surface studied and it is shown that these defects tend to stay close to each other. • Effects of Mg and Mg-Nb defects on DSSCs using TiO{sub 2} anatase hosting these defects are studied. - Abstract: In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO{sub 2} anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO{sub 2} surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase J{sub SC} of the surface while slightly decreasing V{sub OC} compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  2. Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Singh, Jaspal; Vashihth, A.; Gill, Pritampal Singh; Verma, N. K.

    2015-01-01

    Zn 1-x Mg x O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles

  3. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  4. Solid solutions of gadolinium doped zinc oxide nanorods by combined microwave-ultrasonic irradiation assisted crystallization

    Science.gov (United States)

    Kiani, Armin; Dastafkan, Kamran; Obeydavi, Ali; Rahimi, Mohammad

    2017-12-01

    Nanocrystalline solid solutions consisting of un-doped and gadolinium doped zinc oxide nanorods were fabricated by a modified sol-gel process utilizing combined ultrasonic-microwave irradiations. Polyvinylpyrrolidone, diethylene glycol, and triethylenetetramine respectively as capping, structure directing, and complexing agents were used under ultrasound dynamic aging and microwave heating to obtain crystalline nanorods. Crystalline phase monitoring, lattice parameters and variation, morphology and shape, elemental analysis, functional groups, reducibility, and the oxidation state of emerged species were examined by PXRD, FESEM, TEM, EDX, FTIR, micro Raman, H2-TPR, and EPR techniques. Results have verified that irradiation mechanism of gelation and crystallization reduces the reaction time, augments the crystal quality, and formation of hexagonal close pack structure of Wurtzite morphology. Besides, dissolution of gadolinium within host lattice involves lattice deformation, unit cell distortion, and angular position variation. Structure related shape and growth along with compositional purity were observed through microscopic and spectroscopic surveys. Furthermore, TPR and EPR studies elucidated more detailed behavior upon exposure to the exerted irradiations and subsequent air-annealing including the formed oxidation states and electron trapping centers, presence of gadolinium, zinc, and oxygen disarrays and defects, as well as alteration in the host unit cell via gadolinium addition.

  5. Inkjet printing lanthanide doped nanorods test paper for visual assays of nitroaromatic explosives

    International Nuclear Information System (INIS)

    Hong, Liang; Mei, Qingsong; Yang, Lei; Zhang, Cheng; Liu, Renyong; Han, Mingyong; Zhang, Ruilong; Zhang, Zhongping

    2013-01-01

    Graphical abstract: -- Highlights: •A test paper was used for visualization of explosive 2,4,6-trinitrophenol (TNP) by the naked eye. •TNP can strongly quench the phosphorescence of NaGdF 4 :Ce/Tb nanorods. •Polyethylenimine (PEI) molecules facilitate the formation of uniform NaGdF 4 nanorods. •PEI molecules provide specific recognized sites for TNP by the acid–base pairing interaction. -- Abstract: The facile and sensitive strategies for detections of nitroaromatic explosives are highly desirable in many challenging environments, especially for homeland security against terrorism. Here, we inkjet printed polyethylenimine (PEI)-coated Ce, Tb co-doped NaGdF 4 nanorods (NaGdF 4 :Ce/Tb NRs) onto common filter paper to construct test paper for visual and instant detections of a typical explosive 2,4,6-trinitrophenol (TNP). Polyethylenimine molecules not only facilitate the formation of uniform NaGdF 4 nanorods but also provide specific recognized sites for TNP by the acid–base pairing interaction. The resultant TNP bound at the surface of PEI-coated NaGdF 4 :Ce/Tb NRs can strongly quench the phosphorescence with a remarkably high quenching constant by the charge transfer mechanism from NaGdF 4 :Ce/Tb NRs to TNP. By printing of the probe on a piece of filter paper, trace amounts of TNP can be visually detected by the appearance of a dark color against a bright green background under a UV lamp. This test paper can detect TNP as low as 0.45 ng mm −2 by the naked eye, which provides a potential application in the rapid, on-line detections of explosives

  6. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M., E-mail: pmshirage@iiti.ac.in, E-mail: paras.shirage@gmail.com [Department of Physics, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); Centre of Materials Science and Engineering, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); J, Aneesh; Adarsh, K. V. [Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023 (India)

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  7. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    International Nuclear Information System (INIS)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M.; J, Aneesh; Adarsh, K. V.

    2015-01-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips

  8. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  9. The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2016-10-01

    Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

  10. Surface polyPEGylation of Eu"3"+ doped luminescent hydroxyapatite nanorods through the combination of ligand exchange and metal free surface initiated atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Zeng, Guangjian; Liu, Meiying; Heng, Chunning; Huang, Qiang; Mao, Liucheng; Huang, Hongye; Hui, Junfeng; Deng, Fengjie; Zhang, Xiaoyong; Wei, Yen

    2017-01-01

    Highlights: • Surface modification of HAp nanorods through the combination of ligand exchange reaction and metal free SI-ATRP. • HAp-polyPEGMA displayed high water dispersibility, good biocompatibility and biological imaging capability. • Metal free ATRP can overcome the toxic and fluorescence quenching effects of metal catalysts of conventional ATRP. - Abstract: The Eu"3"+ doped luminescent hydroxyapatite (HAp) nanorods with uniform size and morphology can be synthesized by hydrothermal route. However, these HAp nanorods are coated by hydrophobic oleylamine, which makes them difficult to be dispersed in aqueous solution and impede their biomedical applications. In this work, Eu"3"+ doped luminescent polymers functionalized HAp nanorods were prepared through the combination of ligand exchange reaction and metal free surface initiated atom transfer radical polymerization (ATRP) method. In this procedure, the amino group functionalized HAp nanorods were first prepared by ligand exchange reaction using adenosine monophosphate (AMP) as ligand. Then the Br-containing initiators (HAp-Br) were introduced onto the surface of HAp-AMP nanorods through the amidation reaction. Finally, polymers functionalized HAp nanorods were prepared by metal free ATRP method using poly(ethylene glycol) methacrylate (PEGMA) as monomer and 10-phenylphenothiazine (PTH) as organic photocatalyst. The properties of these obtained HAp nanocomposites (HAP-polyPEGMA nanorods) were characterized by means of transmission electron microscopy, Fourier transformed infrared spectroscopy, X-ray photoelectron spectroscopy and thermogravimetric analysis in detail. The cell imaging of these HAP-polyPEGMA nanorods was examined using laser scanning confocal microscope to evaluate their biomedical applications. We demonstrated for the first time that hydrophobic luminescent HAp nanorods can be functionalized with polyPEGMA through the combination of ligand exchange reaction and metal free surface initiated

  11. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  12. GaN based nanorods for solid state lighting

    Energy Technology Data Exchange (ETDEWEB)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  13. Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

    OpenAIRE

    Zhu, Jie; Lu, Na; Chen, Wei; Kong, Lina; Yang, Yun; Ma, Dekun; Huang, Shaoming

    2015-01-01

    Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by ...

  14. Influence of iridium doping in MgB2 superconducting wires

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude

    2018-01-01

    MgB2 wires with iridium doping were manufactured using the in-situ technique in a composite Cu-Nb sheath. Reaction was performed at 700°C, 800°C or 900°C for 1h in argon atmosphere. A maximum of about 1.5 at.% Ir replaces Mg in MgB2. The superconducting transition temperature is slightly lowered...... by Ir doping. The formation of IrMg3 and IrMg4 secondary phase particles is evidenced, especially for a nominal stoichiometry with 2.0 at.% Ir doping. The critical current density and accommodation field of the wires are strongly dependent on the Ir content and are generally weakened in the presence...

  15. SIMS and Raman studies of Mg-doped InN

    International Nuclear Information System (INIS)

    Davydov, V.Yu.; Kitaev, Yu.E.; Smirnov, A.N.; Lundina, E.Y.; Klochikhin, A.A.; Smirnov, M.B.; Lu, Hai; Schaff, William J.; Lee, H.M.; Lin, H.W.; Hong, Y.L.; Gwo, S.

    2008-01-01

    Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg =3.3 x 10 19 to 5.5 x 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Comparing the Electrochemical Performance of LiFePO4/C Modified by Mg Doping and MgO Coating

    Directory of Open Access Journals (Sweden)

    Jianjun Song

    2013-01-01

    Full Text Available Supervalent cation doping and metal oxide coating are the most efficacious and popular methods to optimize the property of LiFePO4 lithium battery material. Mg-doped and MgO-coated LiFePO4/C were synthesized to analyze their individual influence on the electrochemical performance of active material. The specific capacity and rate capability of LiFePO4/C are improved by both MgO coating and Mg doping, especially the Mg-doped sample—Li0.985Mg0.015FePO4/C, whose discharge capacity is up to 163 mAh g−1, 145.5 mAh g−1, 128.3 mAh g−1, and 103.7 mAh g−1 at 1 C, 2 C, 5 C, and 10 C, respectively. The cyclic life of electrode is obviously increased by MgO surface modification, and the discharge capacity retention rate of sample LiFePO4/C-MgO2.5 is up to 104.2% after 100 cycles. Comparing samples modified by these two methods, Mg doping is more prominent on prompting the capacity and rate capability of LiFePO4, while MgO coating is superior in terms of improving cyclic performance.

  17. Large circular dichroism and optical rotation in titanium doped chiral silver nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Titus, Jitto; Perera, A.G. Unil [Department of Physics and Astronomy, Optoelectronics Laboratory, GSU, Atlanta, GA (United States); Larsen, George; Zhao, Yiping [Department of Physics and Astronomy, Nanolab, UGA, Athens, GA (United States)

    2016-10-15

    The circular dichroism of titanium-doped silver chiral nanorod arrays grown using the glancing angle deposition (GLAD) method is investigated in the visible and near infrared ranges using transmission ellipsometry and spectroscopy. These films are found to have significant circular polarization effects across broad ranges of the visible to NIR spectrum, including large values for optical rotation. The characteristics of these circular polarization effects are strongly influenced by the morphology of the deposited arrays. Thus, the morphological control of the optical activity in these nanostructures demonstrates significant optimization capability of the GLAD technique for fabricating chiral plasmonic materials. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Photodegradation of phenol by N-Doped TiO2 anatase/rutile nanorods assembled microsphere under UV and visible light irradiation

    International Nuclear Information System (INIS)

    Mohamed, Mohamad Azuwa; Salleh, W.N.W.; Jaafar, Juhana; Ismail, A.F.; Nor, Nor Azureen Mohamad

    2015-01-01

    N-doped TiO 2 anatase/rutile nanorods assembled microspheres were successfully synthesized via a simple and direct sol–gel method containing titanium-n-butoxide Ti(OBu) 4 as a precursor material, nitric acid as a catalyst, and isopropanol as a solvent. By manipulating calcination temperature, the photocatalyst consisting of different phase compositions of anatase and rutile was obtained. The prepared TiO 2 nanoparticles were characterized by means of x-ray diffraction (XRD), field emission scanning microscope (FESEM), atomic force microscopy (AFM), Brunauer–Emmett–Teller (BET) analysis, UV–Vis–NIR spectroscopy, and fourier transform infrared (FTIR). The results from UV–Vis–NIR spectroscopy and FTIR revealed the direct incorporation of nitrogen in TiO 2 lattice since visible absorption capability was observed at 400–600 nm. XPS study indicated the incorporation of nitrogen as dopant in TiO 2 at binding energies of 396.8, 397.5, 398.7, 399.8, and 401 eV. Calcination temperature was observed to have a great influence on the photocatalytic activity of the TiO 2 nanorods. The photocatalytic activity of the prepared mixed phase of anatase/rutile TiO 2 nanoparticles was measured by photodegradation phenol in an aqueous solution under UV and visible irradiations. N-doped TiO 2 anatase/rutile nanorods assembled microsphere (consists of 38.3% anatase and 61.7% rutile) that was prepared at 400 °C exhibited the highest photocatalytic activity after irradiated under visible and UV light for 540 min. The high performance of photocatalyst materials could be obtained by adopting a judicious combination of anatase/rutile prepared at optimum calcination conditions. - Highlights: • Synthesis of N-Doped TiO 2 Anatase/Rutile Nanorods via simple preparation method. • Direct incorporation of HNO 3 as the nitrogen dopant source. • The photocatalytic properties were studied upon UV and visible light irradiation. • The optimum calcination temperature is 400 °C for

  19. Thiourea-Modified TiO2 Nanorods with Enhanced Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Xiaofeng Wu

    2016-02-01

    Full Text Available Semiconductor TiO2 photocatalysis has attracted much attention due to its potential application in solving the problems of environmental pollution. In this paper, thiourea (CH4N2S modified anatase TiO2 nanorods were fabricated by calcination of the mixture of TiO2 nanorods and thiourea at 600 °C for 2 h. It was found that only N element was doped into the lattice of TiO2 nanorods. With increasing the weight ratio of thiourea to TiO2 (R from 0 to 8, the light-harvesting ability of the photocatalyst steady increases. Both the crystallization and photocatalytic activity of TiO2 nanorods increase first and then decrease with increase in R value, and R2 sample showed the highest crystallization and photocatalytic activity in degradation of Brilliant Red X3B (X3B and Rhodamine B (RhB dyes under visible light irradiation (λ > 420 nm. The increased visible-light photocatalytic activity of the prepared N-doped TiO2 nanorods is due to the synergistic effects of the enhanced crystallization, improved light-harvesting ability and reduced recombination rate of photo-generated electron-hole pairs. Note that the enhanced visible photocatalytic activity of N-doped nanorods is not based on the scarification of their UV photocatalytic activity.

  20. Inkjet printing lanthanide doped nanorods test paper for visual assays of nitroaromatic explosives

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Liang [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China); Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Mei, Qingsong [Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Yang, Lei [Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Cheng; Liu, Renyong [Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Han, Mingyong, E-mail: my-han@imre.a-star.edu.sg [Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); ASTAR, Inst Mat Res and Engn, Singapore 117602 (Singapore); Zhang, Ruilong [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China); Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China); Zhang, Zhongping, E-mail: zpzhang@iim.ac.cn [Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei, Anhui 230031 (China)

    2013-11-13

    Graphical abstract: -- Highlights: •A test paper was used for visualization of explosive 2,4,6-trinitrophenol (TNP) by the naked eye. •TNP can strongly quench the phosphorescence of NaGdF{sub 4}:Ce/Tb nanorods. •Polyethylenimine (PEI) molecules facilitate the formation of uniform NaGdF{sub 4} nanorods. •PEI molecules provide specific recognized sites for TNP by the acid–base pairing interaction. -- Abstract: The facile and sensitive strategies for detections of nitroaromatic explosives are highly desirable in many challenging environments, especially for homeland security against terrorism. Here, we inkjet printed polyethylenimine (PEI)-coated Ce, Tb co-doped NaGdF{sub 4} nanorods (NaGdF{sub 4}:Ce/Tb NRs) onto common filter paper to construct test paper for visual and instant detections of a typical explosive 2,4,6-trinitrophenol (TNP). Polyethylenimine molecules not only facilitate the formation of uniform NaGdF{sub 4} nanorods but also provide specific recognized sites for TNP by the acid–base pairing interaction. The resultant TNP bound at the surface of PEI-coated NaGdF{sub 4}:Ce/Tb NRs can strongly quench the phosphorescence with a remarkably high quenching constant by the charge transfer mechanism from NaGdF{sub 4}:Ce/Tb NRs to TNP. By printing of the probe on a piece of filter paper, trace amounts of TNP can be visually detected by the appearance of a dark color against a bright green background under a UV lamp. This test paper can detect TNP as low as 0.45 ng mm{sup −2} by the naked eye, which provides a potential application in the rapid, on-line detections of explosives.

  1. Phthalocyanine doping to improve critical current densities in MgB2 tapes

    International Nuclear Information System (INIS)

    Zhang Xianping; Ma Yanwei; Wang Dongliang; Gao Zhaoshun; Wang Lei; Qi Yanpeng; Awaji, Satoshi; Watanabe, Kazuo; Mossang, Eric

    2009-01-01

    Phthalocyanine-doped MgB 2 tapes were prepared by the in situ powder-in-tube method. The relationships between the critical current properties, crystallinity and microstructure were studied as a function of the phthalocyanine doping level. It is found that both H irr and H c2 were improved when MgB 2 samples were doped with phthalocyanine, which are mainly attributed to the effective carbon substitution and enhanced flux pinning strength caused by very fine grain sizes. Furthermore, compared to pure samples, the MgO content remained almost unchanged in all doped tapes, which is very beneficial to having better grain connectivity in MgB 2 . Significantly improved J c was obtained in the phthalocyanine-doped MgB 2 tapes, especially under high magnetic fields.

  2. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    International Nuclear Information System (INIS)

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-01-01

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE C ) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE C of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination

  3. Surface polyPEGylation of Eu{sup 3+} doped luminescent hydroxyapatite nanorods through the combination of ligand exchange and metal free surface initiated atom transfer radical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Guangjian; Liu, Meiying [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Heng, Chunning [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Shaanxi Key Laboratory of Degradable Biomedical Materials, Shaanxi R& D Center of Biomaterials and Fermentation Engineering, School of Chemical and Engineering, Northwest University, Xi’an 710069 (China); Huang, Qiang; Mao, Liucheng; Huang, Hongye [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Hui, Junfeng [Shaanxi Key Laboratory of Degradable Biomedical Materials, Shaanxi R& D Center of Biomaterials and Fermentation Engineering, School of Chemical and Engineering, Northwest University, Xi’an 710069 (China); Deng, Fengjie, E-mail: fengjiedeng@aliyun.com [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Zhang, Xiaoyong, E-mail: xiaoyongzhang1980@gmail.com [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Wei, Yen, E-mail: weiyen@tsinghua.edu.cn [Department of Chemistry and The Tsinghua Center for Frontier Polymer Research, Tsinghua University, Beijing 100084 (China)

    2017-03-31

    Highlights: • Surface modification of HAp nanorods through the combination of ligand exchange reaction and metal free SI-ATRP. • HAp-polyPEGMA displayed high water dispersibility, good biocompatibility and biological imaging capability. • Metal free ATRP can overcome the toxic and fluorescence quenching effects of metal catalysts of conventional ATRP. - Abstract: The Eu{sup 3+} doped luminescent hydroxyapatite (HAp) nanorods with uniform size and morphology can be synthesized by hydrothermal route. However, these HAp nanorods are coated by hydrophobic oleylamine, which makes them difficult to be dispersed in aqueous solution and impede their biomedical applications. In this work, Eu{sup 3+} doped luminescent polymers functionalized HAp nanorods were prepared through the combination of ligand exchange reaction and metal free surface initiated atom transfer radical polymerization (ATRP) method. In this procedure, the amino group functionalized HAp nanorods were first prepared by ligand exchange reaction using adenosine monophosphate (AMP) as ligand. Then the Br-containing initiators (HAp-Br) were introduced onto the surface of HAp-AMP nanorods through the amidation reaction. Finally, polymers functionalized HAp nanorods were prepared by metal free ATRP method using poly(ethylene glycol) methacrylate (PEGMA) as monomer and 10-phenylphenothiazine (PTH) as organic photocatalyst. The properties of these obtained HAp nanocomposites (HAP-polyPEGMA nanorods) were characterized by means of transmission electron microscopy, Fourier transformed infrared spectroscopy, X-ray photoelectron spectroscopy and thermogravimetric analysis in detail. The cell imaging of these HAP-polyPEGMA nanorods was examined using laser scanning confocal microscope to evaluate their biomedical applications. We demonstrated for the first time that hydrophobic luminescent HAp nanorods can be functionalized with polyPEGMA through the combination of ligand exchange reaction and metal free surface

  4. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  5. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-01-01

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al x Ga 1−x N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al 0.7 Ga 0.3 N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA

  6. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    International Nuclear Information System (INIS)

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-01-01

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

  7. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  8. Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

    Directory of Open Access Journals (Sweden)

    Chao Yan

    2017-01-01

    Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

  9. Effects of graphite doping on critical current density and microstructure of MgB2 bulks by an improved Mg-diffusion method

    International Nuclear Information System (INIS)

    Pan, X.F.; Zhao, Y.; Feng, Y.; Yang, Y.; Cheng, C.H.

    2008-01-01

    abstract: A series of graphite-doped MgB 2 bulks with high density have been successfully prepared by an improved Mg-diffusion method in ambient pressure. The effects of graphite doping on lattice parameters, T c , J c and microstructure of MgB 2 have been investigated. The results show that compared to the nano-C-doped or CNTs-doped MgB 2 , C is not easy to substitute B in graphite-doped MgB 2 . However, at the same C content, the graphite-doped MgB 2 has a higher J c . At 10 K and self-field, the J c for MgB 1.985 C 0.015 reaches 0.58 MA/cm 2 . For the MgB 1.945 C 0.055 , at 5 K, 7 T and 10 K, 6 T the J c achieves 10,000 A/cm 2 which is two orders of magnitude higher than that for the undoped sample. In addition to improving electron scattering and intergranular connectivity, the unreacted graphite in the graphite-doped MgB 2 is proposed to be responsible to the excellent J c properties of MgB 2 in high fields, due to depressed grain growth and enhanced grain boundary flux pinning

  10. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  11. Photodegradation of phenol by N-Doped TiO{sub 2} anatase/rutile nanorods assembled microsphere under UV and visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Mohamad Azuwa [Advanced Membrane Technology Research Centre, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Faculty of Petroleum and Renewable Energy Engineering, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Salleh, W.N.W., E-mail: hayati@petroleum.utm.my [Advanced Membrane Technology Research Centre, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Faculty of Petroleum and Renewable Energy Engineering, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Jaafar, Juhana; Ismail, A.F.; Nor, Nor Azureen Mohamad [Advanced Membrane Technology Research Centre, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia); Faculty of Petroleum and Renewable Energy Engineering, UniversitiTeknologi Malaysia, 81310 Skudai, Johor Bahru (Malaysia)

    2015-07-15

    N-doped TiO{sub 2} anatase/rutile nanorods assembled microspheres were successfully synthesized via a simple and direct sol–gel method containing titanium-n-butoxide Ti(OBu){sub 4} as a precursor material, nitric acid as a catalyst, and isopropanol as a solvent. By manipulating calcination temperature, the photocatalyst consisting of different phase compositions of anatase and rutile was obtained. The prepared TiO{sub 2} nanoparticles were characterized by means of x-ray diffraction (XRD), field emission scanning microscope (FESEM), atomic force microscopy (AFM), Brunauer–Emmett–Teller (BET) analysis, UV–Vis–NIR spectroscopy, and fourier transform infrared (FTIR). The results from UV–Vis–NIR spectroscopy and FTIR revealed the direct incorporation of nitrogen in TiO{sub 2} lattice since visible absorption capability was observed at 400–600 nm. XPS study indicated the incorporation of nitrogen as dopant in TiO{sub 2} at binding energies of 396.8, 397.5, 398.7, 399.8, and 401 eV. Calcination temperature was observed to have a great influence on the photocatalytic activity of the TiO{sub 2} nanorods. The photocatalytic activity of the prepared mixed phase of anatase/rutile TiO{sub 2} nanoparticles was measured by photodegradation phenol in an aqueous solution under UV and visible irradiations. N-doped TiO{sub 2} anatase/rutile nanorods assembled microsphere (consists of 38.3% anatase and 61.7% rutile) that was prepared at 400 °C exhibited the highest photocatalytic activity after irradiated under visible and UV light for 540 min. The high performance of photocatalyst materials could be obtained by adopting a judicious combination of anatase/rutile prepared at optimum calcination conditions. - Highlights: • Synthesis of N-Doped TiO{sub 2} Anatase/Rutile Nanorods via simple preparation method. • Direct incorporation of HNO{sub 3} as the nitrogen dopant source. • The photocatalytic properties were studied upon UV and visible light irradiation.

  12. Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods

    International Nuclear Information System (INIS)

    Rout, Chandra Sekhar; Rao, C N R

    2008-01-01

    n-ZnO NR/p-Si and n-ZnO NR/p-PEDOT/PSS heterojunction light-emitting diodes (LEDs) have been fabricated with ZnO nanorods (NRs) grown by a low-temperature method as well as by employing pulsed laser deposition (PLD). The low-temperature method involves growing the ZnO nanorods by the reaction of water with zinc metal. The current-voltage (I-V) characteristics of the heterojunctions show good rectifying diode characteristics. The electroluminescence (EL) spectra of the nanorods show an emission band at around 390 nm and defect related bands in the 400-550 nm region. Room-temperature electroluminescence is detected under forward bias for both the heterostructures. With the low-temperature grown nanorods, the defect related bands in the 400-550 nm range are more intense in the EL spectra, whereas with the PLD grown nanorods, only the 390 nm band is prominent

  13. Enhanced visible light photocatalytic properties of Fe-doped TiO2 nanorod clusters and monodispersed nanoparticles

    International Nuclear Information System (INIS)

    Liu, Y.; Wei, J.H.; Xiong, R.; Pan, C.X.; Shi, J.

    2011-01-01

    In order to get photocatalysts with desired morphologies and enhanced visible light responses, the Fe-doped TiO 2 nanorod clusters and monodispersed nanoparticles were prepared by modified hydrothermal and solvothermal method, respectively. The microstructures and morphologies of TiO 2 crystals can be controlled by restraining the hydrolytic reaction rates. The Fe-doped photocatalysts were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis absorption spectroscopy (UV-vis), N 2 adsorption-desorption measurement (BET), and photoluminescence spectroscopy (PL). The refinements of the microstructures and morphologies result in the enhancement of the specific surface areas. The Fe 3+ -dopants in TiO 2 lattices not only lead to the significantly extending of the optical responses from UV to visible region but also diminish the recombination rates of the electrons and holes. The photocatalytic activities were evaluated by photocatalytic decomposition of formaldehyde in air under visible light illumination. Compared with P25 (TiO 2 ) and N-doped TiO 2 nanoparticles, the Fe-doped photocatalysts show high photocatalytic activities under visible light.

  14. A Novel Gas Sensor Based on MgSb2O6 Nanorods to Indicate Variations in Carbon Monoxide and Propane Concentrations

    Science.gov (United States)

    Guillén-Bonilla, Héctor; Flores-Martínez, Martín; Rodríguez-Betancourtt, Verónica-María; Guillen-Bonilla, Alex; Reyes-Gómez, Juan; Gildo-Ortiz, Lorenzo; de la Luz Olvera Amador, María; Santoyo-Salazar, Jaime

    2016-01-01

    Bystromite (MgSb2O6) nanorods were prepared using a colloidal method in the presence of ethylenediamine, after a calcination step at 800 °C in static air. From X-ray powder diffraction analyses, a trirutile-type structure with lattice parameters a = 4.64 Å and c = 9.25 Å and space group P42/mnm was identified. Using scanning electron microscopy (SEM), microrods with sizes from 0.2 to 1.6 μm were observed. Transmission electron microscopy (TEM) analyses revealed that the nanorods had a length of ~86 nm and a diameter ~23.8 nm. The gas-sensing properties of these nanostructures were tested using pellets elaborated with powders of the MgSb2O6 oxide (calcined at 800 °C) at temperatures 23, 150, 200, 250 and 300 °C. The pellets were exposed to different concentrations of carbon monoxide (CO) and propane (C3H8) at these temperatures. The results showed that the MgSb2O6 nanorods possess excellent stability and high sensitivity in these atmospheres. PMID:26840318

  15. A Novel Gas Sensor Based on MgSb2O6 Nanorods to Indicate Variations in Carbon Monoxide and Propane Concentrations

    Directory of Open Access Journals (Sweden)

    Héctor Guillén-Bonilla

    2016-01-01

    Full Text Available Bystromite (MgSb2O6 nanorods were prepared using a colloidal method in the presence of ethylenediamine, after a calcination step at 800 °C in static air. From X-ray powder diffraction analyses, a trirutile-type structure with lattice parameters a = 4.64 Å and c = 9.25 Å and space group P42/mnm was identified. Using scanning electron microscopy (SEM, microrods with sizes from 0.2 to 1.6 μm were observed. Transmission electron microscopy (TEM analyses revealed that the nanorods had a length of ~86 nm and a diameter ~23.8 nm. The gas-sensing properties of these nanostructures were tested using pellets elaborated with powders of the MgSb2O6 oxide (calcined at 800 °C at temperatures 23, 150, 200, 250 and 300 °C. The pellets were exposed to different concentrations of carbon monoxide (CO and propane (C3H8 at these temperatures. The results showed that the MgSb2O6 nanorods possess excellent stability and high sensitivity in these atmospheres.

  16. Investigations on photoelectrochemical performance of boron doped ZnO nanorods synthesized by facile hydrothermal technique

    Science.gov (United States)

    Sharma, Akash; Chakraborty, Mohua; Thangavel, R.

    2018-05-01

    Undoped and 10% Boron (B)-doped Zinc Oxide nanorods (ZnO NRs) on Tin doped Indium Oxide (ITO) coated glass substrates were synthesized using facile sol-gel, spin coating and hydrothermal method. The impact of adding Boron on the structural, optical properties, surface morphology and photoelectrochemical (PEC) performances of the ZnO NRs have been investigated. The XRD pattern confirmed the formation of pure hexagonal phase with space group P63mc (186). The same can also be clearly observed form the FESEM images. The UV-Vis study shows the narrowing in band gap from 3.22 eV to 3.19 eV with incorporation of Boron in ZnO matrix. The B-doped ZnO NRs sample shows an enhanced photocurrent density of 1.31 mA/cm2 at 0.5 V (vs. Ag/AgCl), which is more than 171% enhancement compared to bare ZnO NRs (0.483 mA/cm2) in 0.1 M Na2SO4 aqueous solution. The results clearly indicates that the boron doped ZnO NRs can be used as an efficient photoelectrode material for photoelectrochemical cell.

  17. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  18. Influence of different ions doping on the antibacterial properties of MgO nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Yuanyuan; Wang, Wei, E-mail: weiwang@hust.edu.cn; Tan, Fatang; Cai, Yuncheng; Lu, Junwen; Qiao, Xueliang

    2013-11-01

    Compared with other inorganic antibacterial agents, magnesium oxide (MgO) nanopowders exhibit a unique antibacterial mechanism and various advantages in applications, having attracted extensive attention. In this study, MgO nanopowders doped with different ions (Li{sup +}, Zn{sup 2+} and Ti{sup 4+}) were synthesized by a sol–gel method, respectively. The structures and morphologies of the as-obtained precursors and nanopowders were characterized and confirmed by X-ray diffraction (XRD), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The influence of three metal ions doping on the antibacterial properties of MgO nanopowders was also investigated by their bactericidal activity against Escherichia coli (E. coli, ATCC 25922) using the broth microdilution method and the agar method. The results show that Li-doped MgO exhibits better antibacterial activity, Zn-doped and Ti-doped MgO display poorer antibacterial activity than pure MgO. It can be concluded that the influence of different ions doping on the antibacterial properties of MgO mainly lies on oxygen vacancies and basicity of nanopowders.

  19. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  20. Efficient one-pot synthesis of Ag nanoparticles loaded on N-doped multiphase TiO2 hollow nanorod arrays with enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Wu Min; Yang Beifang; Lv Yan; Fu Zhengping; Xu Jiao; Guo Ting; Zhao Yongxun

    2010-01-01

    The simultaneous Ag loaded and N-doped TiO 2 hollow nanorod arrays with various contents of silver (Ag/N-THNAs) were successfully synthesized on glass substrates by one-pot liquid phase deposition (LPD) method using ZnO nanorod arrays as template. The catalysts were characterized by Raman spectrum, field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscope (HRTEM), ultraviolet-vis (UV-vis) absorption spectrum and X-ray photoelectron spectroscopy (XPS). The results suggest that AgNO 3 additive in the precursor solutions not only can promote the anatase-to-rutile phase transition, but also influence the amount of N doping in the samples. The photocatalytic activity of all the samples was evaluated by photodegradation of methylene blue (MB) in aqueous solution. The sample exhibited the highest photocatalytic activity under UV light illumination when the AgNO 3 concentration in the precursor solution was 0.03 M, due to Ag nanoparticles acting as electron sinks; When the AgNO 3 concentration was 0.07 M, the sample performed best under visible light illumination, attributed to the synergetic effects of Ag loading, N doping, and the multiphase structure (anatase/rutile).

  1. Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

    International Nuclear Information System (INIS)

    Mishra, Vijay Kumar; Bhattacharjee, Birendra Nath; Parkash, Om; Kumar, Devendra; Rai, Shyam Bahadur

    2014-01-01

    Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO 3 ) 2 ⋅4H 2 O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ⋅6H 2 O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH 2 PO 4 ⋅2H 2 O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized structurally using X-ray diffraction and

  2. Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Vijay Kumar [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India); Bhattacharjee, Birendra Nath; Parkash, Om [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kumar, Devendra, E-mail: devendra.cer@iitbhu.ac.in [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rai, Shyam Bahadur, E-mail: sbrai49@yahoo.co.in [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India)

    2014-11-25

    Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO{sub 3}){sub 2}⋅4H{sub 2}O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO{sub 3}){sub 2}⋅6H{sub 2}O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH{sub 2}PO{sub 4}⋅2H{sub 2}O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized

  3. X-ray characterisation of single GaAs nanorods grown on Si

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, A.; Pietsch, Ullrich [Universitaet Siegen (Germany). Festkoerperphysik; Breuer, Steffen; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-01

    Semiconductor nanorods are of particular interest for new semiconductor devices. The nanorod approach can be used to form radial or axial heterostructures of materials with a large lattice mismatch. For the inspection of average structural parameters of the nanorods, typically X-ray or electron diffraction techniques are used. Alternatively, transmission electron microscopy can be used to inspect few individual nanorods after respective sample preparation. Complementary, recent developments in X-ray optics allow to focus a synchrotron beam down to the nanometer scale and to perform nondestructive diffraction studies at several individual nano-objects grown the same substrate. In this contribution we report on X-ray diffraction studies at individual GaAs nanorods grown Au seed-free on a Si[111] substrate. Due to the nanometer-sized x-ray beam, size and lattice parameters of individual nanorods could be measured and compared to the value obtained from the whole ensemble. Using the coherence properties of the focused beam we could observe speckle-like interference fringes in the surrounding of particular sensitive Bragg reflections which are a measure for the appearance of stacking faults within the nanorods. The separation of the speckles could be used to estimate the number of stacking faults and the size of the coherently scattering nanorod-segments.

  4. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  5. Effects of graphite doping on critical current density and microstructure of MgB{sub 2} bulks by an improved Mg-diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Pan, X.F. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)], E-mail: yshao@home.swjtu.edu.cn; Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xi' an, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xi' an (China); Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2008-09-15

    abstract: A series of graphite-doped MgB{sub 2} bulks with high density have been successfully prepared by an improved Mg-diffusion method in ambient pressure. The effects of graphite doping on lattice parameters, T{sub c}, J{sub c} and microstructure of MgB{sub 2} have been investigated. The results show that compared to the nano-C-doped or CNTs-doped MgB{sub 2}, C is not easy to substitute B in graphite-doped MgB{sub 2}. However, at the same C content, the graphite-doped MgB{sub 2} has a higher J{sub c}. At 10 K and self-field, the J{sub c} for MgB{sub 1.985}C{sub 0.015} reaches 0.58 MA/cm{sup 2}. For the MgB{sub 1.945}C{sub 0.055}, at 5 K, 7 T and 10 K, 6 T the J{sub c} achieves 10,000 A/cm{sup 2} which is two orders of magnitude higher than that for the undoped sample. In addition to improving electron scattering and intergranular connectivity, the unreacted graphite in the graphite-doped MgB{sub 2} is proposed to be responsible to the excellent J{sub c} properties of MgB{sub 2} in high fields, due to depressed grain growth and enhanced grain boundary flux pinning.

  6. Morphological and optical studies of zinc oxide doped MgO

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Zayani Jaafar, E-mail: jaafar.zayani@yahoo.fr; Matoussi, Adel

    2016-06-25

    This paper reports morphological and optical characterizations of sintered (ZnO){sub 1−x}(MgO){sub x} composite materials. The effects of MgO doping content on these pellets properties have been analyzed. The SEM observations have shown rougher surfaces of the samples covered by grains having prismatic shapes and different sizes. From reflectance and absorption measurements, we have determined the band gap energy which tends to augment from 3.287 to 3.827 eV as the doping content increases. This widening of the optical band gap is explained by the Burstein-Moss effect which causes a significant increase of electron concentration (2.89 10{sup 18}−5.1910{sup 20} cm{sup −3}). In addition, the absorption coefficient, Urbach energy, optical constants (refractive index, extinction coefficient, dielectric constant) and dispersion parameters, such as E{sub 0} (single-oscillator energy), E{sub d} (dispersive energy) were determined of the (ZnO){sub 1−x}(MgO){sub x} composites and analyzed. - Highlights: • (ZnO){sub 1−x}(MgO){sub x} composites were synthesized by solid state sintering method. • MgO doping increased the band gap energy. • SEM observations have shown a decrease of grain sizes when the MgO doping increases. • Optical constants and dispersion parameters were determined and analyzed.

  7. Fabrication and Characterization of Mg-Doped GaN Nanowires

    International Nuclear Information System (INIS)

    Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

    2008-01-01

    Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

  8. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  9. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  10. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Li Binghui [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China); Wu Chunxia [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Lu Youming [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Shen Dezhen [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2006-07-15

    MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K.

  11. Synthesis of uniform-sized bimetallic iron-nickel phosphide nanorods

    International Nuclear Information System (INIS)

    Yoon, Ki Youl; Jang, Youngjin; Park, Jongnam; Hwang, Yosun; Koo, Bonil; Park, Je-Geun; Hyeon, Taeghwan

    2008-01-01

    We synthesized uniform-sized nanorods of iron-nickel phosphides from the thermal decomposition of metal-phosphine complexes. Uniform-sized (Fe x Ni 1-x ) 2 P nanorods (0≤x≤1) of various compositions were synthesized by thermal decomposition of Ni-trioctylphosphine (TOP) complex and Fe-TOP complex. By measuring magnetic properties, we found that blocking temperature and coercive field depend on Ni content in the nanorods. Both parameters were more sensitive to doping compared with bulk samples. - Graphical abstract: We synthesized uniform-sized nanorods of iron-nickel phosphides from thermal decomposition of metal-phosphine complexes. The magnetic studies showed that blocking temperature and coercive field depend on Ni content in the nanorods

  12. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  13. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  14. Effect of CdS/Mg-Doped CdSe Cosensitized Photoanode on Quantum Dot Solar Cells

    Directory of Open Access Journals (Sweden)

    Yingxiang Guan

    2015-01-01

    Full Text Available Quantum dots have emerged as a material platform for low-cost high-performance sensitized solar cells. And doping is an effective method to improve the performance of quantum dot sensitized solar cells (QDSSCs. Since Kwak et al. from South Korea proved the incorporation of Mg in the CdSe quantum dots (QDs in 2007, the Mg-doped CdSe QDs have been thoroughly studied. Here we report a new attempt on CdS/Mg-doped CdSe quantum dot cosensitized solar cells (QDCSSC. We analyzed the performance of CdS/Mg-doped CdSe quantum dot cosensitized solar cells via discussing the different doping concentration of Mg and the different SILAR cycles of CdS. And we studied the mechanism of CdS/Mg-doped CdSe QDs in detail for the reason why the energy conversion efficiency had been promoted. It is a significant instruction on the development of Mg-doped CdSe quantum dot sensitized solar cells (QDSSCs.

  15. Flux pinning behaviors of Ti and C co-doped MgB2 superconductors

    International Nuclear Information System (INIS)

    Yang, Y.; Zhao, D.; Shen, T.M.; Li, G.; Zhang, Y.; Feng, Y.; Cheng, C.H.; Zhang, Y.P.; Zhao, Y.

    2008-01-01

    Flux pinning behavior of carbon and titanium concurrently doped MgB 2 alloys has been studied by ac susceptibility and dc magnetization measurements. It is found that critical current density and irreversibility field of MgB 2 have been significantly improved by doping C and Ti concurrently, sharply contrasted to the situation of C-only-doped or Ti-only-doped MgB 2 samples. AC susceptibility measurement reveals that the dependence of the pinning potential on the dc applied field of Mg 0.95 Ti 0.05 B 1.95 C 0.05 has been determined to be U(B dc )∝B dc -1 compared to that of MgB 2 U(B dc )∝B dc -1.5 . As to the U(J) behavior, a relationship of U(J) ∝ J -0.17 is found fitting well for Mg 0.95 Ti 0.05 B 1.95 C 0.05 with respect to U(J) ∝ J -0.21 for MgB 2 . All the results reveal a strong enhancement of the high field pinning potential in C and Ti co-doped MgB 2

  16. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

    International Nuclear Information System (INIS)

    Zhao, Y.; Ke, C.; Cheng, C.H.; Feng, Y.; Yang, Y.; Munroe, P.

    2010-01-01

    Nano-diamond and titanium concurrently doped MgB 2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J c -H behavior and pinning force scaling features of MgB 2 have been investigated. Although T c was slightly depressed, J c of MgB 2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB 2 , a unique nanocomposite in which TiB 2 forms a thin layer surrounding MgB 2 grains whereas nano-diamond particles were wrapped inside the MgB 2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB 2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB 2 system.

  17. 1D Bi2S3 nanorod/2D e-WS2 nanosheet heterojunction photocatalyst for enhanced photocatalytic activity

    Science.gov (United States)

    Vattikuti, S. V. Prabhakar; Shim, Jaesool; Byon, Chan

    2018-02-01

    The development of high-activity, long-life, precious-metal-free photocatalysts for redox reactions in photoelectrochemical cells and fuel cells remains challenging. The synthesis of high-activity heterostructured photocatalysts is crucial for efficient energy conversion strategies. Herein, a novel photocatalyst based on 1D Bi2S3 nanorods self-assembled on 2D exfoliated tungsten disulfide (e-WS2) nanosheets has been developed for the degradation of methyl orange (MO) dye in aqueous solution. We demonstrate a novel and facile hydrothermal method for the synthesis of a Bi2S3 nanorod/e-WS2 nanosheet heterostructure. The photocatalytic properties of the heterostructure under visible light were investigated. Enhanced photocatalytic activity was attributed to the presence of strong surface active sites, as well as the specific morphology of the composite. We also observed the fast transfer of electron-hole pairs at the material interface. This work demonstrates a non-noble semiconductor photocatalyst for the degradation of pollutants and evolution of H2.

  18. Construction of CdS@UIO-66-NH2 core-shell nanorods for enhanced photocatalytic activity with excellent photostability.

    Science.gov (United States)

    Liang, Qian; Cui, Sainan; Liu, Changhai; Xu, Song; Yao, Chao; Li, Zhongyu

    2018-08-15

    A novel class of CdS@UIO-66-NH 2 core shell heterojunction was fabricated by the facile in-situ solvothermal method. Characterizations show that porous UIO-66-NH 2 shell not only allows the visible light to be absorbed on CdS nanorod core, but also provides abundant catalytic active sites as well as an intimate heterojunction interface between UIO-66-NH 2 shell and CdS nanorod core. By taking advantage of this property, the core-shell composite presents highly solar-driven photocatalytic performance compared with pristine UIO-66-NH 2 and CdS nanorod for the degradation of organic dyes including malachite green (MG) and methyl orange (MO), and displays superior photostability after four recycles. Furthermore, the photoelectrochemical performance of CdS@UIO-66-NH 2 can be measured by the UV-vis spectra, Mott-Schottky plots and photocurrent. The remarkably enhanced photocatalytic activity of CdS@UIO-66-NH 2 can be ascribed to high surface areas, intimate interaction on molecular scale and the formation of one-dimensional heterojunction with n-n type. What's more, the core-shell heterostructural CdS@UIO-66-NH 2 can facilitate the effective separation and transfer of the photoinduced interfacial electron-hole pairs and protect CdS nanorod core from photocorrosion. Copyright © 2018 Elsevier Inc. All rights reserved.

  19. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  20. Lattice location of Mg in GaN: a fresh look at doping limitations

    CERN Document Server

    AUTHOR|(CDS)2069243; Augustyns, Valerie; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; De Lemos Lima, Tiago Abel; Lippertz, Gertjan; Martins Correia, Joao; Castro Ribeiro Da Silva, Manuel; Kappers, Menno; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

    2017-01-01

    Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2E19 cm−3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

  1. Low-pressure Environmental TEM (ETEM) studies of Au assisted MgO nanorod growth

    DEFF Research Database (Denmark)

    Duchstein, Linus Daniel Leonhard; Damsgaard, Christian Danvad; Hansen, Thomas Willum

    2012-01-01

    where they become inactive for CO oxidation. Here, we present an environmental transmission electron microscopy (ETEM) study of shape changes of Au nanoparticles supported on MgO in a controlled gas atmosphere, in order to elucidate the mobility of surface species and the configuration of the Au...... and interface structure of supported nanoparticles in a controlled environment [7]. This allows for a deeper understanding of the dynamic response of the surface and interface to changes in gas composition, pressure and temperature. Additionally, an Ultra High Vacuum (UHV) TEM has been used in order to have...... a higher degree of control of the initial state and probe the low-pressure regime. This combination is a powerful toolbox for charactering the behavior of the mobility of atomic species at the MgO surface leading to the formation of nanorods. Figure 1 shows Au particles on MgO cubes being irradiated...

  2. Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

    2015-09-15

    Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

  3. Molecular rectification modulated by alternating boron and nitrogen co-doping in a combined heterostructure of two zigzag-edged trigonal graphenes

    International Nuclear Information System (INIS)

    Wang, Li-hua; Sun, Yan; Zhang, Zi-zhen; Ding, Bing-jun; Guo, Yong

    2014-01-01

    The rectifying properties of a heterostructure combined with two trigonal graphenes are investigated by first-principles approach. The graphenes have left (left and right) vertical benzenes substituted with alternating nitrogen and boron atoms. The results indicate that co-doping atoms have distinct influences on the rectifying performance of such devices. When the left trigonal graphene is doped and two trigonal graphenes are bound through a BH pair, a reverse rectifying behavior can be observed. However, a forward rectifying behavior is observed when they are bound through an NH (NB) pair. The rectifying effect is more prominent for the NB pair.

  4. Al-doped MgB_2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan

    2016-01-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB_2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB_2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB_2. Above a certain level of Al doping, enhanced conductive properties of MgB_2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  5. Individual GaAs nanorods imaged by coherent X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Pietsch, Ullrich; Biermanns, Andreas; Davydok, Anton [Universitaet Siegen (Germany); Paetzelt, Hendrik [Universitaet Leipzig (Germany); IOM Leipzig (Germany); Diaz, Ana; Metzger, Hartmut [ID01 Beamline, ESRF (France); Gottschalch, Volker [Universitaet Leipzig (Germany)

    2010-07-01

    Semiconductor nanorods are of particular interest for new semiconductor devices because the nanorod approach can be used to form heterostructures of materials with a large lattice mismatch and to define nanorod arrays with tailored inter-rod distance. However, all applications require objects with uniform physical properties based on uniform morphology. Complementary to electron microscopy techniques, destruction free X-ray diffraction techniques can be used to determine structural and morphological details. Using scanning X-ray diffraction microscopy with a spot size of 220 x 600 nm{sup 2} we were able to inspect individual GaAs nanorods grown by seed-free MOVPE through circular openings in a SiN{sub x} mask in a periodic array with 3 {mu}m spacing on GaAs[111]B. The focussed X-ray beam allows the determination of the strain state of individual rods and in combination with coherent diffraction imaging, we were able to characterize also morphological details. Rods grown at different positions in the array show significant differences in shape, size and strain state.

  6. CO_2 capture in Mg oxides doped with Fe and Ni

    International Nuclear Information System (INIS)

    Sanchez S, I. F.

    2016-01-01

    In this work the CO_2 capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe_2O_3 phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO_2 in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO_2 capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO_2 capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO_2 capture. The different stages of mass loss and thermal

  7. Microscopic unravelling of nano-carbon doping in MgB2 superconductors fabricated by diffusion method

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; De Silva, K.S.B.; Kondyurin, A.; Bao, P.; Li, W.X.; Xu, X.; Peleckis, G.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    Highlights: • First report on nano-carbon doped MgB 2 superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B 4 C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB 2 with 2.5% nano-carbon doped showed the highest J c , ≈10 4 A/cm 2 for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB 2 crystalline. The strain increased across the doping level due to the carbon substitution in the MgB 2 matrix. The broadening of the T c curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B 4 C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB 2 . Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J c of the 10% nano-carbon doped MgB 2 bulk superconductor

  8. Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

    Science.gov (United States)

    Li, Gong Ping; Chen, Rui; Guo, Dong Lai; Wong, Lai Mun; Wang, Shi Jie; Sun, Han Dong; Wu, Tom

    2011-08-01

    Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in

  9. Synthesis and characterization of Mg-doped ZnO hollow spheres

    International Nuclear Information System (INIS)

    Hammad, Talaat M.; Salem, Jamil K.

    2011-01-01

    Mg-doped ZnO nanoparticles were synthesized by a simple chemical method at low temperature with Mg:Zn atomic ratio from 0 to 7%. The synthesis process is based on the hydrolysis of zinc acetate dihydrate and magnesium acetate tetrahydrate were heated under refluxing at 65 °C using methanol as a solvent. X-ray diffraction analysis reveals that the Mg-doped ZnO crystallizes in a wurtzite structure with crystal size of 5–12 nm. These nanocrystals self-aggregated themselves into hollow spheres of size of 800–1100 nm. High resolution transmission electron microscopy images show that each sphere is made up of numerous nanoparticles of average diameter 5–11 nm. The XRD patterns, SEM and TEM micrographs of doping of Mg in ZnO confirmed the formation of hollow spheres indicating that the Mg 2+ is successfully substituted into the ZnO host structure of the Zn 2+ site. Furthermore, the UV–Vis spectra and photoluminescence (PL) spectra of the ZnO nanoparticles were also investigated. The band gap of the nanoparticles can be tuned in the range of 3.36–3.55 eV by the use of the dopants.

  10. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  11. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Sui Yan-Ping; Yu Guang-Hui

    2011-01-01

    We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    Directory of Open Access Journals (Sweden)

    Hao-Min Xu

    2016-11-01

    Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

  13. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    International Nuclear Information System (INIS)

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-01-01

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  14. Investigation of fluorine adsorption on nitrogen doped MgAl_2O_4 surface by first-principles

    International Nuclear Information System (INIS)

    Lv, Xiaojun; Xu, Zhenming; Li, Jie; Chen, Jiangan; Liu, Qingsheng

    2016-01-01

    Graphical abstract: First-principles calculations indicate that MgAl_2O_4 surface is fluorine-loving, but hydrophobic. N doped MgAl_2O_4 (100) surface structure shows the highest fluorine adsorption performance and fluorine atom is more preferentially adsorbed on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: N doped MgAl_2O_4 (100) > Al_2O_3 (0001) > MgAl_2O_4 (100) > MgO (100). N doped MgAl_2O_4 is a promising candidate for fluorine removal. - Highlights: • MgAl_2O_4 surface is fluorine-loving, not hydrophilic. • Fluorine preferentially adsorbs on the Mg-Al bridge site. • Adsorption intensity follow this order: N doped MgAl_2O_4 > Al_2O_3 > MgAl_2O_4 > MgO. • Excellent adsorption performance attributes to electron compensation of N atom. • Nitrogen doped MgAl_2O_4 is a promising candidate for fluorine removal. - Abstract: The nature of fluorine adsorption on pure and N doped MgAl_2O_4 surface has been investigated by first-principles calculations based on the density functional theory. Calculated results indicate that MgAl_2O_4 surface is fluorine-loving, not hydrophilic. Nitrogen doped MgAl_2O_4 (100) surface shows the highest fluorine adsorption performance and fluorine atom preferentially adsorbs on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: Nitrogen doped MgAl_2O_4 (100) > Al_2O_3 (0001) > MgAl_2O_4 (100) > MgO (100). In-depth PDOS analysis suggested that 2p orbitals of F atom strongly hybridized with 3s- and 3p-orbitals of Al atom contribute to its high adsorption intensity. According to the analysis of Hirshfeld charge, the excellent fluorine adsorption performance of nitrogen doped MgAl_2O_4 attributes to the electron compensation effect of nitrogen atom and strong electrostatic interactions. All these evidences demonstrate a fact nitrogen doped MgAl_2O_4 is a promising candidate for fluorine removal.

  15. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Ke, C. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xian, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xian (China); Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Munroe, P. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2010-11-01

    Nano-diamond and titanium concurrently doped MgB{sub 2} nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J{sub c}-H behavior and pinning force scaling features of MgB{sub 2} have been investigated. Although T{sub c} was slightly depressed, J{sub c} of MgB{sub 2} have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J{sub c} value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB{sub 2}, a unique nanocomposite in which TiB{sub 2} forms a thin layer surrounding MgB{sub 2} grains whereas nano-diamond particles were wrapped inside the MgB{sub 2} grains. Besides, nano-diamond doping results in a high density stress field in the MgB{sub 2} samples, which may take responsibility for the {Delta}{kappa} pinning behavior in the carbon-doped MgB{sub 2} system.

  16. Doping effects of carbon and titanium on the critical current density of MgB2

    International Nuclear Information System (INIS)

    Shen, T M; Li, G; Cheng, C H; Zhao, Y

    2006-01-01

    MgB 2 bulks doped with Ti or/and C were prepared by an in situ solid state reaction method to determine the combined effect of C and Ti doping and to probe the detailed mechanism. The magnetization measurement shows that Mg 0.95 Ti 0.05 B 1.95 C 0.05 sample has significantly improved flux pinning compared to the MgB 1.95 C 0.05 sample at 20 K, indicating that C and Ti are largely cooperative in improving the J c (H) behaviour. No TiC phase was detected in the x-ray diffraction (XRD) patterns. Moreover, the overlap of the (100) peaks of MgB 1.95 C 0.05 and Mg 0.95 Ti 0.05 B 1.95 C 0.05 showed that Ti doping does not reduce the amount of C in MgB 2 . Microstructural analyses revealed that the addition of Ti eliminated the porosity present in the carbon-doped MgB 2 pellet, resulting in an improved intergrain connectivity and an increase of effective current pass. Further, MgB 2 doped with C and Ti, which mainly consists of spherical grains about 200-300 nm in size, shows an higher grain homogeneity than the C-doped sample, suggesting that the Ti doping in MgB 1-x C x has played an important role in obtaining uniform grains

  17. Structural and optical properties of Mg doped ZnS quantum dots and biological applications

    Science.gov (United States)

    Ashokkumar, M.; Boopathyraja, A.

    2018-01-01

    Zn1-xMgxS (x = 0, 0.2 and 0.4) quantum dots (QDs) were prepared by co-precipitation method. The Mg dopant did not modify the cubic blende structure of ZnS QDs. The Mg related secondary phase was not detected even for 40% of Mg doping. The size mismatch between host Zn ion and dopant Mg ion created distortion around the dopant. The creation of distortion centres produced small changes in the lattice parameters and diffraction peak position. All the QDs showed small sulfur deficiency and the deficiency level were increased by Mg doping. Band gap of the QD was decreased due to the dominated quantum confinement effect over compositional effect at initial doping of Mg. But at higher doping the band gap was increased due to compositional effect, since there was no change in average crystallite size. The prepared QDs had three emission bands in the UV and Visible regions corresponding to near band edge emission and defect related emissions. The electron transport reaction chain which forms free radicals was broken by sulfur vacancy trap sites. Therefore, the ZnS QDs had better antioxidant activity and the antioxidant behaviour was enhanced by Mg doping. The enhanced UV absorption and emission of 20% of Mg doped ZnS QDs let to maximize the zone of inhibition against E. Coli bacterial strain.

  18. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  19. Mg-doping experiment and electrical transport measurement of boron nanobelts

    International Nuclear Information System (INIS)

    Kirihara, K.; Hyodo, H.; Fujihisa, H.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.

    2006-01-01

    We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10 -3 (Ω cm) -1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10 -3 (cm 2 Vs -1 ) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

  20. Pressure effect on the Raman and photoluminescence spectra of Eu3+-doped Na2Ti6O13 nanorods

    Science.gov (United States)

    Zeng, Q. G.; Yang, G. T.; Chen, F.; Luo, J. Y.; Zhang, Z. M.; Leung, C. W.; Ding, Z. J.; Sheng, Y. Q.

    2013-12-01

    Eu3+-doped Na2Ti6O13 (Na2Ti6O13:Eu) nanorods with diameters of 30 nm and lengths 400 nm were synthesized by hydrothermal and heat treatment methods. Raman spectra at ambient conditions indicated a pure monoclinic phase (space group C2/m) of the nanorods. The relations between structural and optical properties of Na2Ti6O13:Eu nanorods under high pressures were obtained by photoluminescence and Raman spectra. Two structural transition points at 1.39 and 15.48 GPa were observed when the samples were pressurized. The first transition point was attributed to the crystalline structural distortion. The later transition point was the result of pressure-induced amorphization, and the high-density amorphous (HDA) phase formed after 15.48 GPa was structurally related to the monoclinic baddeleyite structured TiO2 (P21/c). However, the site symmetry of the local environment around the Eu3+ ions in Na2Ti6O13 increased with the rising pressure. These above results indicate the occurrence of short-range order for the local asymmetry around the Eu3+ ions and long-range disorder for the crystalline structure of Na2Ti6O13:Eu nanorods by applying pressure. After releasing the pressure from 22.74 GPa, the HDA phase is transformed to low-density amorphous form, which is attributed to be structurally related to the α-PbO2-type TiO2.

  1. Emission spectra of phosphor MgSO4 doped with Dy and Mn

    International Nuclear Information System (INIS)

    Zhang Chunxiang; Chen Lixin; Tang Qiang; Luo Daling; Qiu Zhiren

    2001-01-01

    Emission spectra of phosphor MgSO 4 doped with Dy and Dy/Mn were measured with an optical multichannel analyzer and a linear heating system whose temperature was controlled by a microcomputer. The emission spectrum bands at 480 nm and 580 nm of phosphor MgSO 4 doped with Dy were observed in the three dimensional (3D) glow curves. Compared with the 3D spectrum of CaSO 4 :Dy and the spectrum bands of MgSO 4 :Dy shows the same wavelengths which resulted from the quantum transitions among the energy levels of Dy 3 '+ ions. The intensities of the glow peaks in both spectrum bands (480 nm and 580 nm) of phosphor MgSO 4 doped with Dy/Mn were dramatically reduced except the 380 degree C glow peak

  2. Flux pinning behaviors of Ti and C co-doped MgB{sub 2} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.; Zhao, D.; Shen, T.M.; Li, G.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xian, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xian (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Zhang, Y.P. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    Flux pinning behavior of carbon and titanium concurrently doped MgB{sub 2} alloys has been studied by ac susceptibility and dc magnetization measurements. It is found that critical current density and irreversibility field of MgB{sub 2} have been significantly improved by doping C and Ti concurrently, sharply contrasted to the situation of C-only-doped or Ti-only-doped MgB{sub 2} samples. AC susceptibility measurement reveals that the dependence of the pinning potential on the dc applied field of Mg{sub 0.95}Ti{sub 0.05}B{sub 1.95}C{sub 0.05} has been determined to be U(B{sub dc}){proportional_to}B{sub dc}{sup -1} compared to that of MgB{sub 2}U(B{sub dc}){proportional_to}B{sub dc}{sup -1.5}. As to the U(J) behavior, a relationship of U(J) {proportional_to} J{sup -0.17} is found fitting well for Mg{sub 0.95}Ti{sub 0.05}B{sub 1.95}C{sub 0.05} with respect to U(J) {proportional_to} J{sup -0.21} for MgB{sub 2}. All the results reveal a strong enhancement of the high field pinning potential in C and Ti co-doped MgB{sub 2}.

  3. Al-doped MgB{sub 2} materials studied using electron paramagnetic resonance and Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koç University, Rumelifeneri Yolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Freiburg Institute for Advanced Studies (FRIAS), Universität Freiburg, Albertstr. 19, Freiburg (Germany)

    2016-05-16

    Undoped and aluminum (Al) doped magnesium diboride (MgB{sub 2}) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB{sub 2}. Above a certain level of Al doping, enhanced conductive properties of MgB{sub 2} disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  4. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

    Directory of Open Access Journals (Sweden)

    Haiting Xie

    2017-10-01

    Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

  5. Soluble Molecularly Imprinted Nanorods for Homogeneous Molecular Recognition

    Directory of Open Access Journals (Sweden)

    Rongning Liang

    2018-03-01

    Full Text Available Nowadays, it is still difficult for molecularly imprinted polymers (MIPs to achieve homogeneous recognition since they cannot be easily dissolved in organic or aqueous phase. To address this issue, soluble molecularly imprinted nanorods have been synthesized by using soluble polyaniline doped with a functionalized organic protonic acid as the polymer matrix. By employing 1-naphthoic acid as a model, the proposed imprinted nanorods exhibit an excellent solubility and good homogeneous recognition ability. The imprinting factor for the soluble imprinted nanoroads is 6.8. The equilibrium dissociation constant and the apparent maximum number of the proposed imprinted nanorods are 248.5 μM and 22.1 μmol/g, respectively. We believe that such imprinted nanorods may provide an appealing substitute for natural receptors in homogeneous recognition related fields.

  6. Soluble Molecularly Imprinted Nanorods for Homogeneous Molecular Recognition

    Science.gov (United States)

    Liang, Rongning; Wang, Tiantian; Zhang, Huan; Yao, Ruiqing; Qin, Wei

    2018-03-01

    Nowadays, it is still difficult for molecularly imprinted polymer (MIPs) to achieve homogeneous recognition since they cannot be easily dissolved in organic or aqueous phase. To address this issue, soluble molecularly imprinted nanorods have been synthesized by using soluble polyaniline doped with a functionalized organic protonic acid as the polymer matrix. By employing 1-naphthoic acid as a model, the proposed imprinted nanorods exhibit an excellent solubility and good homogeneous recognition ability. The imprinting factor for the soluble imprinted nanoroads is 6.8. The equilibrium dissociation constant and the apparent maximum number of the proposed imprinted nanorods are 248.5 μM and 22.1 μmol/g, respectively. We believe that such imprinted nanorods may provide an appealing substitute for natural receptors in homogeneous recognition related fields.

  7. Investigations on structural, vibrational and dielectric properties of nanosized Cu doped Mg-Zn ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Anand [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Department of Physics, MEDICAPS Institute of Science and Technology, Pithampur 453331 (India); Rajpoot, Rambabu; Dar, M. A.; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com, E-mail: anand.212@gmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India)

    2016-05-23

    Transition metal Cu{sup 2+} doped Mg-Zn ferrite [Mg{sub 0.5}Zn{sub 0.5-x}Cu{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5)] were prepared by sol gel auto combustion (SGAC) method to probe the structural, vibrational and electrical properties. X-ray diffraction (XRD) pattern reveals a single-phase cubic spinel structure without the presence of any secondary phase corresponding to other structure. The average particle size of the parent Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} is found to be ~29.8 nm and is found to increase with Cu{sup 2+} doping. Progressive reduction in lattice parameter of Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} has been observed due to difference in ionic radii of cations with improved Cu doping. Spinel cubic structure is further confirmed by Raman spectroscopy. Small shift in Raman modes towards higher wave number has been observed in doped Mg-Zn ferrites. The permittivity and dielectric loss decreases at lower doping and increases at higher order doping of Cu{sup 2+}.

  8. Growth kinetics and properties of ZnO/ZnMgO heterostructures grown by radical-source molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, S.V. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation); El-Shaer, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Shubina, T.V.; Listoshin, S.B. [Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation)

    2007-07-01

    A phenomenological approach to quantitative description of Zn(Mg)O growth by radical-source molecular beam epitaxy, based on the experimental studies of RHEED intensity oscillations, has been developed. It allows a precise control of growth rate, composition and stoichiometry at any growth temperature, Along with optimization of a growth initiation procedure on a c-sapphire, it is necessary condition for fabrication of high quality ZnO epilayers and ZnO/ZnMgO heterostructures in a wide Mg composition range. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Novel aspects of diluted and digital magnetic heterostructures

    International Nuclear Information System (INIS)

    Bonanni, A.

    1999-04-01

    In the present work novel aspects of diluted and digital II-VI-based heterostructures containing Mn ions are investigated. All the structures under study were fabricated by means of molecular beam epitaxy. Digital magnetic heterostructures have been prepared by incorporating discrete (sub)monolayers of the purely magnetic semiconductor MnTe into otherwise non magnetic CdTe quantum wells embedded in CdMgTe barriers. Formation and binding energy of magnetic polarons have been investigated in these structures and compared with the diluted case. Reflectance difference spectroscopy (RDS) performed ex-situ allowed to distinguish between signals due to the crystal anisotropy solely and those induced by the presence a magnetic elements. The problem of p-type doping of bulk diluted magnetic semiconductors II-VI-based is tackled. During and upon growth of ZnMnTe highly doped with N, in-situ RDS was carried out in order to investigate intra-ion transitions within the half filled 3d shell of Mn. Transport measurements and magnetometry at low temperature were performed to study, on the tracks of recent theoretical works, the influence of free carriers on the interaction between magnetic ions. As expected, indications of ferromagnetic ordering were found for the DMS with the highest concentration of carriers. Special attention was given to the formation of Mn islands on a II-VI substrate and to their change in morphology upon overgrowth with a mismatched material. A rich zoology of regularly shaped nanostructures could be produced. (author)

  10. Microscopic unravelling of nano-carbon doping in MgB{sub 2} superconductors fabricated by diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Wong, D.C.K. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Yeoh, W.K. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); De Silva, K.S.B. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Institute for Nanoscale Technology, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007 (Australia); Kondyurin, A.; Bao, P. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Li, W.X. [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Xu, X.; Peleckis, G.; Dou, S.X. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Ringer, S.P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); Zheng, R.K., E-mail: rongkun.zheng@sydney.edu.au [School of Physics, The University of Sydney, New South Wales 2006 (Australia)

    2015-09-25

    Highlights: • First report on nano-carbon doped MgB{sub 2} superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B{sub 4}C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB{sub 2} with 2.5% nano-carbon doped showed the highest J{sub c}, ≈10{sup 4} A/cm{sup 2} for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB{sub 2} crystalline. The strain increased across the doping level due to the carbon substitution in the MgB{sub 2} matrix. The broadening of the T{sub c} curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B{sub 4}C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB{sub 2}. Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J{sub c} of the 10% nano-carbon doped MgB{sub 2} bulk superconductor.

  11. Isostructural and heterostructural MgZnO and CdZnO alloys

    Energy Technology Data Exchange (ETDEWEB)

    Schleife, Andre; Roedl, Claudia; Bechstedt, Friedhelm [Institut fuer Festkoerpertheorie und -optik and European Theoretical Spectroscopy Facility, Friedrich-Schiller-Universitaet Jena, 07743 Jena (Germany)

    2011-07-01

    One important goal of materials design is to purposefully tailor the fundamental band gap. Recently, group-II oxides such as MgO, ZnO, and CdO are discussed to possibly supersede the nitrides for certain applications, e.g. in optoelectronics. Since the band gaps of the oxides cover a large spectral range from 1.8 eV (CdO) up to 7.7 eV (MgO), their alloys seem to be promising - unless the different equilibrium crystal structures of the end components (rocksalt-MgO and -CdO vs. wurtzite-ZnO) prevent their application. By employing three different cluster statistics within a cluster-expansion approach we investigate the impact of different growth conditions on the composition of isostructural and heterostructural Mg{sub x}Zn{sub 1-x}O and Cd{sub x}Zn{sub 1-x}O alloys. Our total-energy calculations are based on density-functional theory using a generalized-gradient approximation for exchange and correlation. We also compute quasiparticle energies using the HSE03+G{sub 0}W{sub 0} approach. This allows us to derive the bowings of fundamental band gaps, which reveal a strongly nonlinear behavior. Using the solution of the Bethe-Salpeter equation for the optical polarization function we investigate the influence of the preparation conditions on the peaks related to bound excitonic states at the absorption edge.

  12. Structural and critical current properties in Al-doped MgB2

    International Nuclear Information System (INIS)

    Zheng, D.N.; Xiang, J.Y.; Lang, P.L.; Li, J.Q.; Che, G.C.; Zhao, Z.W.; Wen, H.H.; Tian, H.Y.; Ni, Y.M.; Zhao, Z.X.

    2004-01-01

    A series of Al-doped Mg 1-x Al x B 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2 , measurements on the superconducting transition temperature T c , irreversible field B irr and critical current density J c were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration

  13. Structural and critical current properties in Al-doped MgB 2

    Science.gov (United States)

    Zheng, D. N.; Xiang, J. Y.; Lang, P. L.; Li, J. Q.; Che, G. C.; Zhao, Z. W.; Wen, H. H.; Tian, H. Y.; Ni, Y. M.; Zhao, Z. X.

    2004-08-01

    A series of Al-doped Mg 1- xAl xB 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2, measurements on the superconducting transition temperature Tc, irreversible field Birr and critical current density Jc were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration.

  14. Ag nanoparticles-decorated ZnO nanorod array on a mechanical flexible substrate with enhanced optical and antimicrobial properties

    OpenAIRE

    Chen, Yi; Tse, Wai Hei; Chen, Longyan; Zhang, Jin

    2015-01-01

    Heteronanostructured zinc oxide nanorod (ZnO NR) array are vertically grown on polydimethylsiloxane (PDMS) through a hydrothermal method followed by an in situ deposition of silver nanoparticles (Ag NPs) through a photoreduction process. The Ag-ZnO heterostructured nanorods on PDMS are measured with an average diameter of 160?nm and an average length of 2??m. ZnO NRs measured by high-resolution transmission electron microscope (HRTEM) shows highly crystalline with a lattice fringe of 0.255?nm...

  15. Mg-doped nano ferrihydrite - A new adsorbent for fluoride removal from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Mohapatra, M., E-mail: mamatamohapatra@yahoo.com [Institute of Minerals and Materials Technology, Bhubaneswar 751 013, Orissa (India); Hariprasad, D.; Mohapatra, L.; Anand, S.; Mishra, B.K. [Institute of Minerals and Materials Technology, Bhubaneswar 751 013, Orissa (India)

    2012-03-01

    The present study evaluates synthesized Mg-doped nano ferrihydrite powder as an adsorbent for F{sup -} removal from aqueous solutions. High surface area Mg-doped ferrihydrite was prepared by co-precipitation method under controlled conditions. Samples were prepared by varying Mg content in the range of 0.39-1.12%. Preliminary test work revealed that under similar conditions, with the increase in Mg content from 0.39 to 0.98% in doped ferrihydrite, % F{sup -} adsorption increased from 66 to 91%. Hence this sample was characterized by XRD, TEM, SAED and TG-DTA. Batch adsorption experiments were carried out by varying contact time (30-480 min), initial pH (1.0-10), initial fluoride concentration (10-150 mg/L), adsorbent dose (0.5-4 g/L), temperature (20-45 Degree-Sign C) and Cl{sup -} or SO{sub 4}{sup 2-} concentrations (nil to 50 mg/L). The results showed 0.98% Mg-doped ferrihydrite to be an excellent fluoride adsorbent giving maximum adsorption capacity of 64 mg/g. The time data fitted well to pseudo second order kinetic model. The isothermal data followed Langmuir model. Thermodynamic parameters confirmed the adsorption process to be spontaneous and endothermic. 89% of fluoride could be desorbed from loaded sample using 1 M NaOH.

  16. Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Lenshin, A. S. [Voronezh State University (Russian Federation); Arsentiev, I. N., E-mail: arsentyev@mail.ioffe.ru; Zhabotinskii, A. V.; Nikolaev, D. N.; Tarasov, I. S.; Shamakhov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Prutskij, Tatiana, E-mail: prutskiy@yahoo.com [Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias (Mexico); Leiste, Harald; Rinke, Monika [Karlsruhe Nano Micro Facility (Germany)

    2017-01-15

    The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al{sub x}Ga{sub 1–x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.

  17. Properties of V-implanted ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bakin, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Schmid, H [Institut fuer Anorganische Chemie, University of Bonn, Roemerstrasse 164, 53117 Bonn (Germany); Mader, W [Institut fuer Anorganische Chemie, University of Bonn, Roemerstrasse 164, 53117 Bonn (Germany); Sievers, S [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Albrecht, M [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Ronning, C [II. Institute of Physics, Georg-August-University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Mueller, S [II. Institute of Physics, Georg-August-University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Al-Suleiman, M [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Postels, B [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Wehmann, H-H [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Siegner, U [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)

    2007-03-28

    ZnO nanorods were grown on Si substrates by an aqueous chemical approach and subsequently doped by V implantation. Transmission electron microscopy and photoluminescence spectroscopy reveal a severely defective material directly after the implantation process. Subsequent annealing leads to a partial recovery of the crystal structure. The magnetic features of ZnO:V nanorods were investigated by magnetic force microscopy. Images taken of ensembles as well as of single rods clearly display contrast, which is seen as a strong indication of ferromagnetism at room temperature.

  18. Identifying suitable substrates for high-quality graphene-based heterostructures

    Science.gov (United States)

    Banszerus, L.; Janssen, H.; Otto, M.; Epping, A.; Taniguchi, T.; Watanabe, K.; Beschoten, B.; Neumaier, D.; Stampfer, C.

    2017-06-01

    We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

  19. Effect of annealing on microstructure evolution in CoFeB/MgO/CoFeB heterostructures by positron annihilation

    Science.gov (United States)

    Zhao, Chong-Jun; Lu, Xiang-An; Zhao, Zhi-Duo; Li, Ming-Hua; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Zhang, Jing-Yan; Yu, Guang-Hua

    2013-09-01

    As one of the most powerful tools for investigation of defects of materials, positron annihilation spectroscopy was employed to explore the thermal effects on the film microstructure evolution in CoFeB/MgO/CoFeB heterostructures. It is found that high annealing temperature can drive vacancy defects agglomeration and ordering acceleration in the MgO barrier. Meanwhile, another important type of defects, vacancy clusters, which are formed via the agglomeration of vacancy defects in the MgO barrier after annealing, still exists inside the MgO barrier. All these behaviors in the MgO barrier could potentially impact the overall performance in MgO based magnetic tunnel junctions.

  20. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  1. Stabilization of Reactive MgO Surfaces by Ni Doping

    Science.gov (United States)

    Mazheika, Aliaksei; Levchenko, Sergey V.

    Ni-MgO solid solutions are promising materials for catalytic reduction of CO2 and dry reforming of CH4. To explain the catalytic activity, an ab initio study of Ni-substitutional defects in MgO (NiMg) has been performed. At first, the validation of the theory level was done. We compared results of CCSD(T) embedded-cluster calculations of NiMg formation energies and adsorption energies of CO, CO2 and H2 on them to the HSE(α) hybrid DFT functional with the fraction of the exact exchange α varied between 0 and 1. HSE(0.3) was found to be the best compromise in this study. Our periodic HSE(0.3) calculations show that NiMg defects are most stable at corner sites, followed by steps, and are least stable at (001) terraces. Thus, Ni-doping stabilizes stepped MgO surfaces. The dissociative adsorption of H2 on the terrace is found to be endothermic (+ 1 . 1 eV), whereas on (110) surface with NiMg it is highly exothermic (- 1 . 6 eV). Adsorbed CO2 is also significantly stabilized (- 0 . 6 vs. - 2 . 2 eV). These findings explain recent microcalorimetry measurements of H2 and CO2 adsorption at doped Ni-MgO samples. partially supported by UniCat (Deutsche Forschungsgemeinschaft).

  2. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  3. Structural, optical and magnetic characterizations of Mn-doped MgO nanoparticles

    International Nuclear Information System (INIS)

    Azzaza, S.; El-Hilo, M.; Narayanan, S.; Judith Vijaya, J.; Mamouni, N.; Benyoussef, A.; El Kenz, A.; Bououdina, M.

    2014-01-01

    Structural, optical and room temperature magnetic properties of Mn-doped MgO nanoparticles with Mn fractions (5–50 at.%), were investigated. The as-prepared pure MgO, with grain size of about 15 nm, exhibits two magnetization components, one is diamagnetic and another is superparamagnetic. After removing the diamagnetic contribution, the magnetization curve exhibits superparamagnetic behavior which may be attributed to vacancy defects. As the Mn content increases, the lattice parameter decreases, the ferromagnetism appears and the emission bands were considerably blue shifted. First principle electronic structure calculations reveal the decrease of both the gap and the Curie temperature with increasing Mn concentration. The obtained results suggest that both Mn doping and oxygen vacancies play an important role in the development of room temperature ferromagnetism. - Graphical abstract: The measured room temperature magnetization curve for the Mn doped MgO with 5 at.%, 10 at.% and 20 at.%. - Highlights: • Combination of experimental and calculation methods. • Decrease of both the gap and the Curie temperature with increasing Mn content. • Ferromagnetism in MgO originate from interactions between defects

  4. Mo-doped V2O5 hierarchical nanorod/nanoparticle core/shell porous microspheres with improved performance for cathode of lithium-ion battery

    Science.gov (United States)

    Yu, Haolin; Zeng, Jianyun; Hao, Wen; Zhou, Peng; Wen, Xiaogang

    2018-05-01

    Mo-doped V2O5 hierarchical nanorod/nanoparticle core/shell porous microspheres (MVHPMs) were prepared via a simple hydrothermal approach using ammonium metavanadate and ammonium molybdate as precursors followed by a thermal annealing process. The samples were characterized by XRD, SEM, TEM, EDS, and XPS carefully; it confirmed that porous microspheres with uniform Mo doping in the V2O5 matrix were obtained, and it contains an inner core self-assembled with 1D nanorods and outer shell consisting of nanoparticles. A plausible growth mechanism of Mo-doped V2O5 (Mo-V2O5) porous microspheres is suggested. The unique microstructure made the Mo-V2O5 hierarchical microspheres a good cathode material for Li-ion battery. The results indicate the synthesized Mo-V2O5 hierarchical microspheres exhibit well-improved electrochemical performance compared to the undoped samples. It delivers a high initial reversible capacity of 282 mAh g-1 at 0.2 C, 208 mAh g-1 at 2 C, and 111 mAh g-1 at 10 C, and it also exhibits good cycling stabilities; a capacity of 144 mAh g-1 is obtained after 200 cycles at 6 C with a capacity retention of > 82%, which is much high than that of pure V2O5 (95 mAh g-1 with a capacity retention of 72%). [Figure not available: see fulltext.

  5. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  6. Photophysical and energy transfer processes in Ce{sup 3+} co-doped ZrO{sub 2}: Eu{sup 3+} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ahemen, I.; Dejene, F.B. [University of the Free State-Qwaqwa Campus, Department of Physics, Phuthaditjhaba (South Africa)

    2017-02-15

    Cerium (III) ion co-doped ZrO{sub 2}: Eu{sup 3+} nanorods at varying Ce{sup 3+} ion concentrations were synthesized by a simple chemical dehydration route. Their structural, morphological and optical properties were investigated. Structural studies revealed a tetragonal phase with CeO{sub 2} phase grafted onto its surface. Field emission scanning electron microscopy images show nanorods of different dimensions. Diffraction peaks shifted towards smaller angles indicating the incorporation of the rare earth ions. Both Ce{sup 3+} (donor) and Eu{sup 3+} (activator) emission peaks were obtained when the samples were excited via the Ce{sup 3+} excitation band indicating energy transfer from the donor to activator. The process of energy transfer is both multipolar and exchange interactions. However, no significant enhancement of the activator's emission intensity, because concentration quenching process dominated the energy transfer process. The internal quantum efficiency, though low (20-25%), increased with increasing Ce{sup 3+} concentration. (orig.)

  7. Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

    2015-01-15

    The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

  8. N–Mg dual-acceptor co-doping in CuCrO{sub 2} studied by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ying, E-mail: 1080071@hnust.edu.cn [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Nie, Guo-Zheng [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Zou, Daifeng [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, Shenzhen 518055 (China); Tang, Jing-Wu [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Ao, Zhimin, E-mail: Zhimin.Ao@gdut.edu.cn [Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2016-11-25

    In this paper, N–Mg dual-acceptor co-doping in CuCrO{sub 2} is investigated by first-principles calculations. The electronic structure and formation energies of Mg substituting Cr-site, N substituting O-site, and co-doping of both Mg on Cr-site and N on O-site in CuCrO{sub 2} are calculated. It is found that the structure with N and Mg codoped at the nearest sites has the lowest energy due to a modest attractive interaction between the two dopants. Compared with single N or Mg doped CuCrO{sub 2}, the N–Mg codoped CuCrO{sub 2} has a lower formation energy and shallower transition level. In addition, the total density of states (DOS) analysis shows that more hole states appear above the Fermi level and higher DOS for N–Mg co-doping is obtained in the N–Mg codoped CuCrO{sub 2}, which is good to enhance the p-type conductivity in CuCrO{sub 2}. - Highlights: • N–Mg dual-acceptor co-doping in CuCrO{sub 2} is investigated. • N–Mg complex has a lower formation energy and shallower transition level. • More hole states appear above the Fermi level for N–Mg co-doping. • N–Mg co-doping in CuCrO{sub 2} can be expected to have more stable p-type conductivity.

  9. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  10. Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

    Science.gov (United States)

    Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

    2018-04-01

    Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

  11. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  12. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  13. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  14. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

    2009-01-01

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

  15. Analysis of isothermal sintering of zinc-titanate doped with MgO

    Directory of Open Access Journals (Sweden)

    Obradović N.

    2007-01-01

    Full Text Available The aim of this work was analysis of isothermal sintering of zinc titanate ceramics doped with MgO obtained by mechanical activation. Mixtures of ZnO, TiO2 and MgO (0, 1.25 and 2.5% were mechanically activated 15 minutes in a planetary ball mill. The powders obtained were pressed under different pressures and the results were fitted with a phenomenological compacting equation. Isothermal sintering was performed in air for 120 minutes at four different temperatures. Structural characterization of ZnO-TiO2-MgO system after milling was performed at room temperature using XRPD measurements. DTA measurements showed different activation energies for pure and doped ZnO-TiO2 systems. Thus addition of MgO stabilizes the crystal structure of zinc titanate.

  16. Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

    2013-05-15

    Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

  17. Thermoelectric properties of Al doped Mg{sub 2}Si material

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  18. Efficient photocarrier injection in a transition metal oxide heterostructure

    CERN Document Server

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  19. Discharge characteristics of plasma display panels with Si-doped MgO protective layers

    Energy Technology Data Exchange (ETDEWEB)

    Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Barik, U K [Samtel Color Limited, Ghaziabad-201009 (India); Sarkar, Surajit; Biswas, Paramananda [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, Vandana [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Dwivedi, H K [Samtel Color Limited, Ghaziabad-201009 (India); Kumar, Satyendra [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2009-10-01

    We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.

  20. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  1. Fabrication of p-n heterostructure ZnO/Si moth-eye structures: Antireflection, enhanced charge separation and photocatalytic properties

    Science.gov (United States)

    Zeng, Yu; Chen, XiFang; Yi, Zao; Yi, Yougen; Xu, Xibin

    2018-05-01

    The pyramidal silicon substrate is formed by wet etching, then ZnO nanorods are grown on the surface of the pyramidal microstructure by a hydrothermal method to form a moth-eye composite heterostructure. The composite heterostructure of this material determines its excellent anti-reflection properties and ability to absorb light from all angles. In addition, due to the effective heterojunction binding area, the composite micro/nano structure has excellent photoelectric conversion performance. Its surface structure and the large specific surface area gives the material super hydrophilicity, excellent gas sensing characteristic, and photocatalytic properties. Based on the above characteristics, the micro/nano heterostructure can be used in solar cells, sensors, light-emitting devices, and photocatalytic fields.

  2. Mesoporous nitrogen-doped carbon microfibers derived from Mg-biquinoline-dicarboxy compound for efficient oxygen electroreduction

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Aiguo, E-mail: agkong@chem.ecnu.edu.cn [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China); Fan, Xiaohong; Chen, Aoling [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China); Zhang, Hengiang [School of Chemistry and Chemical Engineering, Hebei Normal University for Nationalities, Chengde 067000 (China); Shan, Yongkui, E-mail: agkong@chem.ecnu.edu.cn [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China)

    2017-02-15

    An in-situ MgO-templating synthesis route was introduced to obtain the mesoporous nitrogen-doped carbon microfibers by thermal conversion of new Mg-2,2′-biquinoline 4,4-dicarboxy acid coordination compound (Mg-DCA) microfibers. The investigated crystal structure of Mg-DCA testified that the assembling of Mg{sup 2+} and DCA through Mg-O coordination bond and hydrogen bond contributed to the formation of one-dimensional (1D) crystalline Mg-DCA microfibers. The nitrogen-doped carbons derived from the pyrolysis of Mg-DCA showed the well-defined microfiber morphology with high mesopore-surface area. Such mesoporous microfibers exhibited the efficient catalytic activity for oxygen reduction reaction (ORR) in alkaline solutions with better stability and methanol-tolerance performance. - Graphical abstract: Mesoporous nitrogen-doped carbon microfibers with efficient oxygen electroreduction activity were prepared by thermal conversion of new Mg-biquinoline-based coordination compound microfibers.

  3. Investigation of fluorine adsorption on nitrogen doped MgAl{sub 2}O{sub 4} surface by first-principles

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Xiaojun; Xu, Zhenming [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Li, Jie, E-mail: 15216105346@163.com [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Chen, Jiangan [Faculty of Resource and Environmental Engineering, Jiangxi University of Science and Technology, Ganzhou 341000 (China); Liu, Qingsheng [Faculty of Metallurgical and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000 (China)

    2016-07-15

    Graphical abstract: First-principles calculations indicate that MgAl{sub 2}O{sub 4} surface is fluorine-loving, but hydrophobic. N doped MgAl{sub 2}O{sub 4} (100) surface structure shows the highest fluorine adsorption performance and fluorine atom is more preferentially adsorbed on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: N doped MgAl{sub 2}O{sub 4} (100) > Al{sub 2}O{sub 3} (0001) > MgAl{sub 2}O{sub 4} (100) > MgO (100). N doped MgAl{sub 2}O{sub 4} is a promising candidate for fluorine removal. - Highlights: • MgAl{sub 2}O{sub 4} surface is fluorine-loving, not hydrophilic. • Fluorine preferentially adsorbs on the Mg-Al bridge site. • Adsorption intensity follow this order: N doped MgAl{sub 2}O{sub 4} > Al{sub 2}O{sub 3} > MgAl{sub 2}O{sub 4} > MgO. • Excellent adsorption performance attributes to electron compensation of N atom. • Nitrogen doped MgAl{sub 2}O{sub 4} is a promising candidate for fluorine removal. - Abstract: The nature of fluorine adsorption on pure and N doped MgAl{sub 2}O{sub 4} surface has been investigated by first-principles calculations based on the density functional theory. Calculated results indicate that MgAl{sub 2}O{sub 4} surface is fluorine-loving, not hydrophilic. Nitrogen doped MgAl{sub 2}O{sub 4} (100) surface shows the highest fluorine adsorption performance and fluorine atom preferentially adsorbs on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: Nitrogen doped MgAl{sub 2}O{sub 4} (100) > Al{sub 2}O{sub 3} (0001) > MgAl{sub 2}O{sub 4} (100) > MgO (100). In-depth PDOS analysis suggested that 2p orbitals of F atom strongly hybridized with 3s- and 3p-orbitals of Al atom contribute to its high adsorption intensity. According to the analysis of Hirshfeld charge, the excellent fluorine adsorption performance of nitrogen doped MgAl{sub 2}O{sub 4} attributes to the electron compensation effect of nitrogen atom and strong electrostatic interactions. All these

  4. Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

    2010-06-01

    Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

  5. Structure and magnetic properties of Zn1-xCoxO single-crystalline nanorods synthesized by a wet chemical method

    International Nuclear Information System (INIS)

    Wang Hao; Wang, H B; Yang, F J; Chen, Y; Zhang, C; Yang, C P; Li, Q; Wong, S P

    2006-01-01

    A novel approach for the synthesis of cobalt-doped ZnO single-crystalline nanorods based on a wet chemical reaction has been developed. The as-doped ZnO nanorods have a length between 0.3 and 0.6 μm and a diameter between 30 and 60 nm. Structure and composition analyses indicate that the cobalt is incorporated into the ZnO lattice, forming a solid solution without any precipitation. Magnetic property measurements reveal that there is room-temperature ferromagnetism in the Zn 1-x Co x O nanorods with T c higher than 300 K

  6. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-02

    A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  7. Insight into destabilization mechanism of Mg-based hydrides interstitially co-doped with nonmetals: a DFT study

    Science.gov (United States)

    Wu, Zhen; Zhu, Luying; Yang, Fusheng; Zhang, Zaoxiao; Nyamsi, Serge N.

    2018-04-01

    Mg-based metal hydride is one of the most promising materials for hydrogen energy storage. However, the high thermal stability due to strong bonding effects between the atoms limits its practical application. In order to reduce the thermal stability, a method of doping double nonmetals into Mg-based system was proposed in this study. The density functional theory (DFT) calculation results showed that the thermal stabilities of both the B-N co-doped Mg-based alloy and its hydride are reduced compared with pure Mg-based system. The relative formation enthalpies of the alloy and its hydride are 0.323 and 0.595 eV atom-1, respectively. The values are much higher than those for either singly B- or N-doped Mg-based system. The more significant destabilization by doping double nonmetal elements than single element is mainly attributed to a dual effect in weakening Mg-Ni/NiH4 bonds, caused by criss-cross interactions between B-Ni and N-Mg bonds.

  8. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  9. Investigation of the effect of Mg doping for improvements of optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Caglar, Mujdat, E-mail: mcaglar@anadolu.edu.tr; Caglar, Yasemin; Ilican, Saliha

    2016-03-15

    Sol–gel spin coating method was used for the deposition of nanostructured undoped and Mg doped ZnO films. The effects of magnesium incorporation on the crystalline structure were investigated by XRD measurements and the structural deterioration was observed in the crystalline quality of the films with respect to increasing in Mg doping. All the samples exhibited a wurtzite structure. From the scanning electron microscopy (SEM) images obtained to investigate the surface morphology it was detected that an increase in Mg doping caused an improvement on the surface roughness and a reduction in the number of voids on the surface. To evaluate the absorption edges of the produced samples depending on the Mg, different methods were used and according to the obtained results, a shifting towards to high energies for the optical band gap was observed in each method. By using the single oscillator model, developed by DiDomenico and Wemple, the refractive index dispersion of the films was analyzed. E{sub o} and E{sub d} values of the 5% Mg doped film were found to be 5.76 eV and 11.80 eV, respectively. Within the scope of electrical properties, from Hall effect measurements, it was determined that all the films exhibited n-type behavior and the carrier concentration increased from 1.49×10{sup 16} to 1.20×10{sup 17} cm{sup −3} with increasing Mg doping.

  10. Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Arslan, Andaç [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Ilican, Saliha [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Hür, Evrim [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Aksoy, Seval; Caglar, Mujdat [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey)

    2013-10-15

    Highlights: •Undoped and Co-doped ZnO films were deposited on p-Si by electrodeposition method. •The effects of Co doping on some properties of ZnO films were investigated. •ZnO morphology was converted uniform multi-oriented rods with incorporation of Co. •Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. -- Abstract: Well-aligned undoped and Co-doped nanorod ZnO films were grown by electrochemical deposition onto p-Si substrates from an aqueous route. Aqueous solution of Zn(NO{sub 3}){sub 2}⋅6H{sub 2}O and hexamethylenetetramine (HMT) were prepared using triple distilled water. Two different atomic ratios of Co(NO{sub 3}){sub 2}⋅6H{sub 2}O were used as a dopant element. Electrodepositions were carried out in a conventional three electrode cell for the working electrode (p-Si), reference electrode (Ag/AgCl, sat.) and counter electrode (platin wire). The effects of Co doping on the structural, morphological and electrical properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the undoped ZnO nanorod film was crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. Only one peak, corresponding to the (0 0 2) phase, appeared on the diffractograms. The lattice parameters and texture coefficient values were calculated. The nanorods were confirmed by the field emission scanning electron microscopy (FE-SEM) measurements. The FE-SEM image showed that the ZnO nanorods grow uniformly on the substrates, providing a surface with fairly homogeneous roughness. The surface morphology was transformed into uniform multi-oriented rods with incorporation of Co. Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. The diffuse reflectance spectra of the films were measured and the optical band gap values were determined using Kubelka–Munk theory. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance

  11. Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Kim, Jong Su; Lee, Sangheon [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Son, Jeongsik [Kyungwoon Univ., Gumi (Korea, Republic of)

    2013-11-15

    Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D{sup o}X), and the first LO phonon replicas of D{sup o}X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ∼70 meV, while that of DAP was about ∼38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

  12. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

    International Nuclear Information System (INIS)

    Bergbauer, W; Strassburg, M; Koelper, Ch; Linder, N; Roder, C; Laehnemann, J; Trampert, A; Fuendling, S; Li, S F; Wehmann, H-H; Waag, A

    2010-01-01

    We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO 2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 μm h -1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

  13. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bergbauer, W; Strassburg, M; Koelper, Ch; Linder, N [Osram Opto Semiconductors GmbH, Leibnizstrasse 4, D-93055 Regensburg (Germany); Roder, C; Laehnemann, J; Trampert, A [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany); Fuendling, S; Li, S F; Wehmann, H-H; Waag, A, E-mail: werner.bergbauer@osram-os.com [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2010-07-30

    We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO{sub 2} masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 {mu}m h{sup -1} were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

  14. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

    Science.gov (United States)

    Bergbauer, W.; Strassburg, M.; Kölper, Ch; Linder, N.; Roder, C.; Lähnemann, J.; Trampert, A.; Fündling, S.; Li, S. F.; Wehmann, H.-H.; Waag, A.

    2010-07-01

    We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 µm h - 1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.

  15. Single Nanorod Devices for Battery Diagnostics: A Case Study on LiMn 2 O 4

    KAUST Repository

    Yang, Yuan

    2009-12-09

    This paper presents single nanostructure devices as a powerful new diagnostic tool for batteries with LiMn2O4 nanorod materials as an example. LiMn2O4 and Al-doped LiMn2O4 nanorods were synthesized by a two-step method that combines hydrothermal synthesis of β-MnO2 nanorods and a solid state reaction to convert them to LiMn2O4 nanorods. λ-MnO2 nanorods were also prepared by acid treatment of LiMn2O4 nanorods. The effect of electrolyte etching on these LiMn2O 4-related nanorods is investigated by both SEM and single-nanorod transport measurement, and this is the first time that the transport properties of this material have been studied at the level of an individual singlecrystalline particle. Experiments show that Al dopants reduce the dissolution of Mn3+ ions significantly and make the LiAl 0.1Mn1.9O4 nanorods much more stable than LiMn2O4 against electrolyte etching, which is reflected by the magnification of both size shrinkage and conductance decrease. These results correlate well with the better cycling performance of Al-doped LiMn 2O4 in our Li-ion battery tests: LiAl0.1Mn 1.9O4 nanorods achieve 96% capacity retention after 100 cycles at 1C rate at room temperature, and 80% at 60 °C, whereas LiMn 2O4 shows worse retention of 91% at room temperature, and 69% at 60 °C. Moreover, temperature-dependent I - V measurements indicate that the sharp electronic resistance increase due to charge ordering transition at 290 K does not appear in our LiMn2O4 nanorod samples, suggesting good battery performance at low temperature. © 2009 American Chemical Society.

  16. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  17. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    International Nuclear Information System (INIS)

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  18. Raman and NMR study in MgO-doped LiNbO3 crystal

    International Nuclear Information System (INIS)

    Hu, L.J.; Chang, Y.H.; Chang, C.S.; Yang, S.J.; Hu, M.L.; Tse, W.S.

    1991-01-01

    This paper reports on the MgO-doped LiNbO 3 crystal grown and studied by NMR and Raman techniques. The solubility of MgO in the LiNbO 3 crystal is as much as 30 mole %. It is shown in NMR spectra that the number of Nb 5+ cations at A-site (Li-site) decrease as Mg concentration increased when the Mg content is lower than 5 mole %. The vibration of (NbO 6 ) octahedron and translations involving Li + and Mg 2+ cations motion can be identified by replacing Nb 5+ and Li + cations with Ta 5+ and Mg 2+ cations through Raman spectra. The 115 cm -1 and 151 cm -1 peaks are due to the translational modes of Mg 2+ and Li + cations. The doping mechanisms of MgO are proposed

  19. Thermodynamic properties of multiferroic Mg doped YbMnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Sattibabu, Bhumireddi, E-mail: bsb.satti@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Bhatnagar, A.K., E-mail: anilb42@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Hyderabad 500046 (India); Samatham, S. Shanmukharao; Singh, D. [Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, M.P. (India); Rayaprol, S. [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Das, D. [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Siruguri, V. [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Ganesan, V. [Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, M.P. (India)

    2015-09-25

    Highlights: • Specific heat data shows that T{sub N} increases for Mg doped YbMnO{sub 3} from 83 K to 86 K. • Yb{sub 1−x}Mg{sub x}MnO{sub 3} (x = 0.0 and 0.05) shows multiple magnetic transitions. • RCP are found to be 26.1 J/mol and 27.2 J/mol for YbMnO{sub 3} and Yb{sub 0.95}Mg{sub 0.05}MnO{sub 3}. - Abstract: Calorimetric studies of polycrystalline samples Yb{sub 1−x}Mg{sub x}MnO{sub 3} with x = 0.0 and 0.05 are reported. It is revealed that the Mg doping raises the antiferromagnetic ordering temperature, T{sub N,} from 83 K for x = 0.0 to 86 K for x = 0.05. A ferromagnetic ordering is also observed around 3 K. The broad feature in the specific heat data just above ferromagnetic ordering, is attributed to the Schottky anomaly. The estimated effective molecular fields from the Schottky analysis are H{sub mf} = 3.0 and 3.5 T for YbMnO{sub 3} and Yb{sub 0.95}Mg{sub 0.05}MnO{sub 3}, respectively. High temperature shift of Schottky anomaly with Mg doping indicates increase in effective molecular field of Mn at the Yb 4b site. The data supports that the idea that although molecular field is mainly responsible for the Schottky anomaly in Yb{sub 1−x}Mg{sub x}MnO{sub 3} and Mn{sup 3+} spin ordering also affects it. Magnetic part of the specific heat is obtained by subtracting the lattice contribution estimated using two Debye temperatures. The magnetic entropy change (ΔS{sub mag}) for pure and doped samples are 2.0 J mol{sup −1} K{sup −1} and 2.1 J mol{sup −1} K{sup −1} respectively, while the relative cooling power (RCP) calculate 26.1 J/mol, 27.2 J/mol for a field change of 10 T.

  20. Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing.

    Science.gov (United States)

    Figuerola, Albert; van Huis, Marijn; Zanella, Marco; Genovese, Alessandro; Marras, Sergio; Falqui, Andrea; Zandbergen, Henny W; Cingolani, Roberto; Manna, Liberato

    2010-08-11

    The thermal evolution of a collection of heterogeneous CdSe-Au nanosystems (Au-decorated CdSe nanorods, networks, vertical assemblies) prepared by wet-chemical approaches was monitored in situ in the transmission electron microscope. In contrast to interfaces that are formed during kinetically controlled wet chemical synthesis, heating under vacuum conditions results in distinct and well-defined CdSe/Au interfaces, located at the CdSe polar surfaces. The high quality of these interfaces should make the heterostructures more suitable for use in nanoscale electronic devices.

  1. Nanorod diameter modulated osteogenic activity of hierarchical micropore/nanorod-patterned coatings via a Wnt/β-catenin pathway.

    Science.gov (United States)

    Zhou, Jianhong; Zhao, Lingzhou; Li, Bo; Han, Yong

    2018-04-14

    Hierarchical micropore/nanorod-patterned strontium doped hydroxyapatite (Ca 9 Sr 1 (PO 4 ) 6 (OH) 2 , Sr 1 -HA) structures (MNRs) with different nanorod diameters of about 30, 70 and 150 nm were coated on titanium, to investigate the effect of nanorod diameter on osteogenesis and the involved mechanism. Compared to micropore/nanogranule-patterned Sr 1 -HA coating (MNG), MNRs gave rise to dramatically enhanced in vitro mesenchymal stem cell functions including osteogenic differentiation in the absence of osteogenic supplements and in vivo osseointegration related to the nanorod diameter with about 70 nm displaying the best effects. MNRs activated the cellular Wnt/β-catenin pathway by increasing the expression of Wnt3a and LRP6 and decreasing the expression of Wnt/β-catenin pathway antagonists (sFRP1, sFRP2, Dkk1 and Dkk2). The exogenous Wnt3a significantly enhanced the β-catenin signaling activation and cell differentiation on MNG, and the exogenous Dkk1 attenuated the enhancing effect of MNRs on them. The data demonstrate that MNRs favor osseointegration via a Wnt/β-catenin pathway. Copyright © 2018 Elsevier Inc. All rights reserved.

  2. Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

    International Nuclear Information System (INIS)

    Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

    2013-01-01

    Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

  3. Influences of Mg Doping on the Electrochemical Performance of TiO2 Nanodots Based Biosensor Electrodes

    Directory of Open Access Journals (Sweden)

    M. S. H. Al-Furjan

    2014-01-01

    Full Text Available Electrochemical biosensors are essential for health monitors to help in diagnosis and detection of diseases. Enzyme adsorptions on biosensor electrodes and direct electron transfer between them have been recognized as key factors to affect biosensor performance. TiO2 has a good protein adsorption ability and facilitates having more enzyme adsorption and better electron transfer. In this work, Mg ions are introduced into TiO2 nanodots in order to further improve electrode performance because Mg ions are considered to have good affinity with proteins or enzymes. Mg doped TiO2 nanodots on Ti substrates were prepared by spin-coating and calcining. The effects of Mg doping on the nanodots morphology and performance of the electrodes were investigated. The density and size of TiO2 nanodots were obviously changed with Mg doping. The sensitivity of 2% Mg doped TiO2 nanodots based biosensor electrode increased to 1377.64 from 897.8 µA mM−1 cm−2 and its KMapp decreases to 0.83 from 1.27 mM, implying that the enzyme achieves higher catalytic efficiency due to better affinity of the enzyme with the Mg doped TiO2. The present work could provide an alternative to improve biosensor performances.

  4. Flux pinning properties of impurity doped MgB2 bulks synthesized by diffusion method

    International Nuclear Information System (INIS)

    Ueda, Shinya; Shimoyama, Jun-ichi; Yamamoto, Akiyasu; Katsura, Yukari; Iwayama, Isao; Horii, Shigeru; Kishio, Kohji

    2005-01-01

    Doping effects of carbon-containing impurities on the critical current properties and microstructure were systematically studied for highly dense MgB 2 bulks prepared by the diffusion method starting from magnesium and boron which are separately packed in sealed stainless tubes. Obtained samples exhibited improved critical current density, J c , simply by an increase of effective current pass. A non-doped MgB 2 recorded almost double high J c at 20 K compared with those of the conventional porous MgB 2 bulks having ∼50% of the theoretical density, while irreversibility field, H irr , did not largely change. J c under high magnetic fields were enhanced by doping of carbon-containing impurities, such as SiC and B 4 C. Optimal doping levels of SiC and B 4 C for high critical current properties at 20 K are found to be ∼2% and 5%, respectively, as nominal carbon concentration at boron site. Difference in the optimal doping levels is originated from the difference in their reactivity

  5. Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires

    Science.gov (United States)

    Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo

    2010-06-01

    The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.

  6. Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si

    Directory of Open Access Journals (Sweden)

    Edwin Soh

    2015-03-01

    Full Text Available Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF, foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

  7. Adsorption of Organophosphate Pesticide Dimethoate on Gold Nanospheres and Nanorods

    Directory of Open Access Journals (Sweden)

    Tatjana Momić

    2016-01-01

    Full Text Available Organophosphorus pesticide dimethoate was adsorbed onto gold nanospheres and nanorods in aqueous solution using batch technique. Adsorption of dimethoate onto gold nanoparticles was confirmed by UV-Vis spectrophotometry, TEM, AFM, and FTIR analysis. The adsorption of nanospheres resulted in aggregation which was not the case with nanorods. Nanoparticles adsorption features were characterized using Langmuir and Freundlich isotherm models. The Langmuir adsorption isotherm was found to have the best fit to the experimental data for both types of nanoparticles. Adsorption capacity detected for nanospheres is 456 mg/g and for nanorods is 57.1 mg/g. Also, nanoparticles were successfully used for dimethoate removal from spiked drinking water while nanospheres were shown to be more efficient than nanorods.

  8. Phase transition and magnetic properties of Mg-doped hexagonal close-packed Ni nanoparticles

    International Nuclear Information System (INIS)

    Yang Jinghai; Feng Bo; Liu Yang; Zhang Yongjun; Yang Lili; Wang Yaxin; Wei Maobin; Lang Jihui; Wang Dandan; Liu Xiaoyan

    2008-01-01

    Mg-doped Ni nanoparticles with the hexagonal close-packed (hcp) and face-centered cubic (fcc) structure have been synthesized by sol-gel method sintered at different temperatures in argon atmosphere. The sintering temperature played an important role in the control of the crystalline phase and the particle size. The pure hcp Mg-doped Ni nanoparticles with average particle size of 6.0 nm were obtained at 320 deg. C. The results indicated that the transition from the hcp to the fcc phase occurred in the temperature range between 320 deg. C and 450 deg. C. Moreover, the VSM results showed that the hcp Mg-doped Ni nanoparticles had unique ferromagnetic and superparamagnetic behavior. The unsaturation even at 5000 Oe is one of the superparamagnetic characteristics due to the small particle size. From the ZFC and FC curves, the blocking temperature T B of the hcp sample (6.0 nm) was estimated to be 10 K. The blocking temperature was related to the size of the magnetic particles and the magnetocrystalline anisotropy constant. By theoretical calculation, the deduced particle size was 6.59 nm for hcp Mg-doped Ni nanoparticles which was in agreement with the results of XRD and TEM

  9. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.

    2009-11-11

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

  10. Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    International Nuclear Information System (INIS)

    Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

    2013-01-01

    Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

  11. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  12. Excimer-laser-induced activation of Mg-doped GaN layers

    International Nuclear Information System (INIS)

    Lin, Y.-J.; Liu, W.-F.; Lee, C.-T.

    2004-01-01

    In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies (i.e., V Ga H 2 ) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration

  13. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  14. Phase constitution in Sr and Mg doped LaGaO3 system

    International Nuclear Information System (INIS)

    Zheng Feng; Bordia, Rajendra K.; Pederson, Larry R.

    2004-01-01

    Sr and Mg doped lanthanum gallate perovskites (La 1-x Sr x Ga 1-y Mg y O 3-δ , shortened as LSGM-XY where X and Y are the doping levels in mole percentage (mol%) at the La- or A-site and the Ga- or B-site, respectively) are promising electrolyte materials for intermediate temperature solid oxide fuel cells (SOFCs). In this study, we have investigated the primary perovskites as well as the secondary phases formed in terms of doping content changes and A/B ratio variations in these materials. Fifteen powder compositions (three doping levels, X=Y=0, 0.1, and 0.2 mol; and five A/B ratios 0.95, 0.98, 1.00, 1.02, and 1.05) were synthesized by the glycine-nitrate combustion process (GNP). These powders were equilibrated by calcining at 1500 deg. C for 9 h prior to crystalline phase characterization by X-ray powder diffraction (XRD). From the results of this study and the available phase diagrams in the literature on constituent binary oxide systems, we propose a crystalline phase diagram of the La 2 O 3 -SrO-Ga 2 O 3 -MgO quaternary system at elevated temperature (1500 deg. C)

  15. Ergonomic Synthesis Suitable for Industrial Production of Silver-Festooned Zinc Oxide Nanorods

    Science.gov (United States)

    Khan, G. R.; Khan, R. A.

    2015-07-01

    For maximizing productivity, minimizing cost, time-boxing process and optimizing human effort, a single-step, cost-effective, ultra-fast and environmentally benign synthesis suitable for industrial production of nanocrystalline ZnO, and Ag-doped ZnO has been reported in this paper. The synthesis based on microwave-supported aqueous solution method used zinc acetate dehydrate and silver nitrate as precursors for fabrication of nanorods. The synthesized products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and UV-Vis-NIR spectroscopy. The undoped and Ag-doped ZnO nanorods crystallized in a hexagonal wurtzite structure having spindle-like morphology. The blue shift occurred at absorption edge of Ag-doped ZnO around 260 nm compared to 365 nm of bulk ZnO. The red shift occurred at Raman peak site of 434 cm-1 compared to characteristic wurtzite phase peak of ZnO (437 cm-1). The bandgap energies were found to be 3.10 eV, 3.11 eV and 3.18 eV for undoped, 1% Ag-doped, and 3% Ag-doped ZnO samples, respectively. The TEM results provided average particle sizes of 17 nm, 15 nm and 13 nm for undoped, and 1% and 3% Ag-doped ZnO samples, respectively.

  16. Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

    Science.gov (United States)

    Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

    2013-05-28

    This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

  17. Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

    International Nuclear Information System (INIS)

    Jeong, Yoon Suk; Kim, Hyunghoon; Lee, Ho Seong

    2013-01-01

    Highlights: •p-Cu 2 O/n-ZnO heterostructures were grown by a two-step potentiostatic method. •The high-quality p-Cu 2 O/n-ZnO nanorod heterojunctions were obtained only at relatively high temperatures of 90 and 100 °C. •p-Cu 2 O/n-ZnO heterojunctions exhibited a well-defined p–n diode characteristic. -- Abstract: p-Cu 2 O/n-ZnO nanorod heterojunctions were fabricated by a two-step process. The process was performed with potentiostatic deposition of n-ZnO nanorods on conductive indium-tin-oxide (ITO) glasses followed by potentiostatic deposition of p-Cu 2 O to form p-Cu 2 O/n-ZnO nanorod heterojunctions. The deposition condition required to form the cuprous oxide layer affected significantly the formation and microstructure of the p-Cu 2 O/n-ZnO nanorod heterojunctions. In particular, the high-quality p-Cu 2 O/n-ZnO nanorod heterojunctions were obtained only at relatively high temperatures of 90 and 100 °C. The p-Cu 2 O/n-ZnO nanorod heterojunctions exhibited a well-defined p–n diode characteristic with an ideality factor of about 4.3

  18. Auto-combustion synthesis and characterization of Mg doped CuAlO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Shraddha, E-mail: shraddhaa32@gmail.com; Parveen, Azra; Naqvi, A. H. [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg.& Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2015-06-24

    The synthesis of pure and Mg doped Copper aluminumoxide CuAlO{sub 2}nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO{sub 2} sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO{sub 2} has been studied over a wide range of frequencies by using complex impedance spectroscopy.The variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.

  19. Comparison between nano-diamond and carbon nanotube doping effects on critical current density and flux pinning in MgB2

    International Nuclear Information System (INIS)

    Cheng, C H; Yang, Y; Munroe, P; Zhao, Y

    2007-01-01

    Doping effects of nano-diamond and carbon nanotubes (CNTs) on critical current density of bulk MgB 2 have been studied. CNTs are found prone to be doped into the MgB 2 lattice whereas nano-diamond tends to form second-phase inclusions in the MgB 2 matrix, leading to a more significant improvement of J c (H) by doping by nano-diamond than by CNTs in MgB 2 . TEM reveals tightly packed MgB 2 nanograins (50-100 nm) with a dense distribution of diamond nanoparticles (10-20 nm) inside MgB 2 grains in nano-diamond-doped samples. Such a unique microstructure leads to a flux pinning behaviour different from that in CNTs-doped MgB 2

  20. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

    2015-01-01

    Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

  1. Uptake, translocation, and toxicity of gold nanorods in maize

    Science.gov (United States)

    Moradi Shahmansouri, Nastaran

    Nanomaterials are widely used in many different products, such as electronics, cosmetics, industrial goods, biomedical uses, and other material applications. The heavy emission of nanomaterials into the environment has motived increasing concern regarding the effects on ecosystems, food chains, and, human health. Plants can tolerate a certain amount of natural nanomaterials, but large amounts of ENMs released from a variety of industries could be toxic to plants and possibly threaten the ecosystem. Employing phytoremediation as a contamination treatment method may show promise. However a pre-requisite to successful treatment is a better understanding of the behavior and effects of nanomaterials within plant systems. This study is designed to investigate the uptake, translocation, bioavailability, and toxicity of gold nanorods in maize plants. Maize is an important food and feed crop that can be used to understand the potential hazardous effects of nanoparticle uptake and distribution in the food chain. The findings could be an important contribution to the fields of phytoremediation, agri-nanotechnology, and nanoparticle toxicity on plants. In the first experiment, hydroponically grown maize seedlings were exposed to similar doses of commercial non-coated gold nanorods in three sizes, 10x34 nm, 20x75 nm, and 40x96 nm. The three nanorod species were suspended in solutions at concentrations of 350 mg/l, 5.8 mg/l, and 14 mg/l, respectively. Maize plants were exposed to all three solutions resulting in considerably lower transpiration and wet biomass than control plants. Likewise, dry biomass was reduced, but the effect is less pronounced than that of transpiration and wet biomass. The reduced transpiration and water content, which eventually proved fatal to exposed plants, were most likely a result of toxic effect of gold nanorod, which appeared to physically hinder the root system. TEM images proved that maize plants can uptake gold particles and accumulate them in

  2. An innovative technique to synthesize C-doped MgB2 by using chitosan as the carbon source

    International Nuclear Information System (INIS)

    Bovone, G; Kawale, S; Siri, A S; Vignolo, M; Bernini, C

    2014-01-01

    Here, we report a new technique to synthesize carbon-doped MgB 2 powder. Chitosan was innovatively used as the carbon source during the synthesis of boron from boron oxide. This allowed the introduction of local defects, which later on served as pinning centers in MgB 2 , in the boron lattice itself, avoiding the traditional and time consuming ways of ex situ MgB 2 doping (e.g. ball milling). Two volume percentages of C-doping have been tried and its effect on the superconducting properties, evaluated by magnetic and transport measurements, are discussed here. Morphological analysis by scanning electron microscopy revealed nano-metric grains’ distribution in the boron and MgB 2 powder. Mono-filamentary MgB 2 wires have been fabricated by an ex situ powder-in-tube technique by using the thus prepared carbon-doped MgB 2 and pure MgB 2 powders. Transport property measurements on these wires were made and compared with MgB 2 wire produced using commercial boron. (fast track communication)

  3. Density functional theory study of hydrogenation mechanism in Fe-doped Mg(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Wu Guangxin; Zhang Jieyu; Wu Yongquan; Li Qian; Chou Kuochih; Bao Xinhua

    2009-01-01

    Using density functional theory (DFT) in combination with nudged elastic band (NEB) method, the dissociative chemisorptions and diffusion processes of hydrogen on both pure and Fe-doped Mg(0 0 0 1) surfaces are studied. Firstly, the dissociation pathway of H 2 and the relative barrier were investigated. The calculated dissociation barrier (1.08 eV) of hydrogen molecule on a pure Mg(0 0 0 1) surface is in good agreement with comparable experimental and theoretical studies. For the Fe-doped Mg(0 0 0 1) surface, the activated barrier decreases to 0.101 eV due to the strong interaction between the s orbital of H and the d orbital of Fe. Then, the diffusion processes of atomic hydrogen on pure and Fe-doped Mg(0 0 0 1) are presented. The obtained diffusion barrier to the first subsurface is 0.45 eV and 0.98 eV, respectively. Finally, Chou method was used to investigate the hydrogen sorption kinetic mechanism of pure MgH 2 and Mg mixed with 5 at.% Fe atoms composites. The obtained activation energies are 0.87 ± 0.02 and 0.31 ± 0.01 eV for H 2 dissociation on the pure surface and H atom diffusion in Fe-doped Mg surfaces, respectively. It suggests that the rate-controlling step is dissociation of H 2 on the pure Mg surface while it is diffusion of H atom in the Fe-doped Mg surface. And both of fitting data are matching well with our calculation results.

  4. Decorating Mg/Fe oxide nanotubes with nitrogen-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yong, E-mail: caoyangel@126.com [Institute of Environment and Municipal Engineering, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Jiao Qingze, E-mail: jiaoqz@bit.edu.cn [School of Chemical Engineering and the Environment, Beijing Institute of Technology, Beijing 100081 (China); Zhao Yun [School of Chemical Engineering and the Environment, Beijing Institute of Technology, Beijing 100081 (China); Dong Yingchao [Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland)

    2011-09-22

    Graphical abstract: Highlights: > Mg/Fe oxide nanotubes arrayed parallel to each other were prepared by an AAO template method. > The Mg/Fe oxide nanotubes decorated with CN{sub x} were realized by CVD of ethylenediamine on the outer surface of oxide nanotubes. > The magnetic properties of Mg/Fe oxide nanotubes were highly improved after being decorated. - Abstract: Mg/Fe oxide nanotubes decorated with nitrogen-doped carbon nanotubes (CN{sub x}) were fabricated by catalytic chemical vapor deposition of ethylenediamine on the outer surface of oxide nanotubes. Mg/Fe oxide nanotubes were prepared using a 3:1 molar precursor solution of Mg(NO{sub 3}){sub 2} and Fe(NO{sub 3}){sub 3} and anodic aluminum oxide as the substrate. The obtained samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). The XRD pattern shows that the oxide nanotubes are made up of MgO and Fe{sub 2}O{sub 3}. TEM and SEM observations indicate the oxide nanotubes are arrayed roughly parallel to each other, and the outer surface of oxide nanotubes are decorated with CN{sub x}. XPS results show the nitrogen-doped level in CN{sub x} is about 7.3 at.%. Magnetic measurements with VSM demonstrate the saturated magnetization, remanence and coercivity of oxide nanotubes are obvious improved after being decorated with CN{sub x}.

  5. AgBr/MgBi2O6 heterostructured composites with highly efficient visible-light-driven photocatalytic activity

    Science.gov (United States)

    Zhong, Liansheng; Hu, Chaohao; Zhuang, Jing; Zhong, Yan; Wang, Dianhui; Zhou, Huaiying

    2018-06-01

    AgBr/MgBi2O6 heterostructured photocatalysts were synthesized by the deposition-precipitation method. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and UV-Visible diffuse reflectance spectroscopy (UV-Vis DRS) were employed to examine the phase structure, morphology and optical properties of the as-prepared samples. The photocatalytic activity was investigated by decomposing methylene blue (MB) solution under visible light irradiation (λ > 420 nm). AgBr/MgBi2O6 composites exhibited significantly enhanced visible-light-driven photocatalytic properties in comparison with pure MgBi2O6 and AgBr. When the molar ratio of AgBr to MgBi2O6 was 3:1, the composite catalyst showed the optimal photocatalytic activity and excellent stability. The enhanced photocatalytic activity of AgBr/MgBi2O6 composites was attributed to the formation of p-n heterojunction between AgBr and MgBi2O6, thereby resulting in the effective separation and transfer of photogenerated electrons-hole pairs.

  6. Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

    Science.gov (United States)

    Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

    2013-01-01

    Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

  7. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

    Science.gov (United States)

    Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

    2018-04-01

    The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

  8. The superconducting properties of co-doped polycrystalline MgB2

    International Nuclear Information System (INIS)

    Moore, J D; Perkins, G K; Branford, W; Yates, K A; Caplin, A D; Cohen, L F; Chen, Soo Kien; Rutter, N A; MacManus-Driscoll, Judith L

    2007-01-01

    In this study we compare the critical current density, the irreversibility line and the upper critical field of four MgB 2 polycrystalline samples, which are either undoped or have 5% carbon or 5% carbon plus either 1% aluminium or 2% zirconium. We discuss how care must be taken for the extraction of the irreversibility line in such samples. We also show how ac susceptibility and Hall probe imaging can be used to examine whether the samples remain fully connected to the highest available fields. Compared to simple 5% carbon doping we find that co-doping provides modest improvement in the pinning properties at intermediate fields in the carbon plus zirconium doped sample

  9. Light emitting diode based on n-Zn0.94M0.06O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

    International Nuclear Information System (INIS)

    Echresh, Ahmad; Oeurn Chey, Chan; Zargar Shoushtari, Morteza; Nur, Omer; Willander, Magnus

    2015-01-01

    In this study, we report on the improvement in the optoelectronic properties of n-ZnO nanorods/p-GaN heterojunction. This was achieved by doping the ZnO with cadmium (Cd) and nickel (Ni). The ZnO and Zn 0.94 M 0.06 O nanorods grown hydrothermally on the p-GaN substrate were used to fabricate the light emitting diodes (LEDs). Structural measurement revealed that nanorods with wurtzite structure having a preferential orientation along the (002) c-axis. The UV–vis spectra show that the optical band gap of Zn 0.94 M 0.06 O nanorods is decreased in comparison to ZnO nanorods. Electrical measurements of the fabricated LEDs show an obvious rectifying behaviour with low threshold voltage. Electroluminescence (EL) characteristics of LEDs operated at forward and reverse bias were investigated. The EL spectra under forward bias show that doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region while the blue peak originating from the p-GaN substrate remains almost unaffected. The effect of doping was to reduce the valence band offsets and consequently more hole injection has occurred leading to the observed enhancement of the broad band in the visible region. Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate. - Highlights: • The reduction of the optical band gap of the M-doped ZnO (M= Cd and Ni) nanorods results in reduction of the valence band offset of the n-Zn 0.94 M 0.06 O nanorods/p-GaN heterojunction LEDs. • Doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region under forward bias. • Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate

  10. Effect of Mg-doping on the degradation of LiNiO2-based cathode materials by combined spectroscopic methods

    OpenAIRE

    Muto, Shunsuke; Tatsumi, Kazuyoshi; Kojima, Yuji; Oka, Hideaki; Kondo, Hiroki; Horibuchi, Kayo; Ukyo, Yoshio

    2012-01-01

    The performance of a LiNiO2-based cell has been shown to be significantly improved by Mg-doping of LiNi0.8Co0.15Al0.05O2 (Mg-doped NCA) cathode materials. In the present study, the effects of Mg-doping were examined by electrochemical impedance spectroscopy (EIS) and scanning transmission electron microscopy-electron energy loss spectroscopy. EIS analysis revealed that the activation energy of Mg-doped NCA for the charge-transfer reaction was larger than that of undoped NCA by a factor of ∼10...

  11. Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

    International Nuclear Information System (INIS)

    Sarua, A; Ji, Hangfeng; Pomeroy, J W; Kuball, M; Uren, M J; Martin, T

    2010-01-01

    Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors (HFETs), i.e. the strain induced by applying bias to a transistor, was studied using micro-Raman scattering spectroscopy as a function of applied source–drain voltage for different GaN buffer doping levels and substrate types. By monitoring the phonon frequency shifts and line width of the E 2 and A 1 (LO) phonon modes of GaN, a considerable piezoelectric strain/stress was found in undoped devices, which exhibited a saturation above 40 V bias. This saturation voltage was used to quantify the deep acceptor concentration in the GaN buffer layer. Using experimental Raman data and numerical modelling of the electric field distribution in the device, it was furthermore established that Fe doping causes confinement of the strain/stress to the vicinity of the AlGaN/GaN interface, i.e. near the electron channel, with potential implications for device reliability. It was concluded that varying the structure and doping in the buffer layer has the potential to modify the converse piezoelectric strain and hence affect reliability issues in AlGaN/GaN HFETs

  12. Quenching and blue shift of UV emission intensity of hydrothermally grown ZnO:Mn nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Vinod, R. [Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Junaid Bushiri, M., E-mail: junaidbushiri@gmail.com [Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Achary, Sreekumar Rajappan; Muñoz-Sanjosé, Vicente [Departamento de FisicaAplicada y Electromagnetismo, Universitat de Valencia, c/Dr. Moliner 50, Burjassot, Valencia 46100 (Spain)

    2015-01-15

    Highlights: • Single crystalline ZnO:Mn nanorods. • Reduced optical active defects. • Quenching and blue shift of UV emission. - Abstract: ZnO:Mn alloyed nanorods (Mn nominal concentration – 3–5 wt%) were synthesized by using hydrothermal process at an optimized growth temperature of 200 °C and a growth time of 3 h. The XRD, SEM and Raman, FTIR investigations reveal that ZnO:Mn (Mn – 3–5 wt%) retained hexagonal wurtzite crystal structure with nanorod morphology. The HRTEM and SAED analysis confirm the single crystalline nature of hydrothermally grown ZnO and ZnO:Mn (5 wt%) nanorods. The ZnO:Mn nanorods (Mn – 0–5 wt%) displayed optical band gap in the range 3.23–3.28 eV. The blue shift of UV emission peak (PL) from 393 (ZnO) to 386 nm and quenching of photoluminescence emission in ZnO:Mn is due to the Mn incorporation in ZnO lattice. Relative increase in intensity of Raman band at 660 cm{sup −1} with nominal doping of Mn 3–5 wt% in ZnO indicate that defects are introduced in ZnO:Mn system as a result of doping that leads to the quenching of photoluminescence emission at 393 nm.

  13. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    International Nuclear Information System (INIS)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  14. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  15. Intraband scattering studies in carbon- and aluminium-doped MgB2

    International Nuclear Information System (INIS)

    Samuely, P.; Szabo, P.; Hol'anova, Z.; Bud'ko, S.; Canfield, P.

    2006-01-01

    Magnetic field effect on the point-contact spectra of the Al- and C-substituted MgB 2 is presented. It is shown that suppression of the π-band contribution to the spectrum is different in the aluminium- and carbon-doped samples. The carbon substitution leads to a stronger enhancement of the π-band scattering while the Al-doping does not change the ratio between the π and σ scatterings

  16. Epitaxial alloys of Al{sub x}Ga{sub 1−x}As:Mg with different types of conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P.V., E-mail: paul@phys.vsu.ru [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Lenshin, A.S. [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Arsentyev, I.N., E-mail: arsentyev@mail.ioffe.ru [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Tarasov, I.S. [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Prutskij, Tatiana, E-mail: prutskij@yahoo.com [Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No 3417, Col San Miguel Hueyotlipan, 72050 Puebla, Pue. (Mexico); Leiste, Harald; Rinke, Monika [Karlsruhe Nano Micro Facility, H.-von-Helmholtz-Platz, 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2016-10-01

    This project employed high-resolution X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy to investigate the structural, optical and band energy properties of the MOCVD epitaxial heterostructures, Al{sub x}Ga{sub 1−x}As:Mg/GaAs(100), with different levels of magnesium doping. It was shown that the choice of technological conditions used in the preparation of the Al{sub x}Ga{sub 1−x}As:Mg alloy allowed different types of conductivity and it was also possible to achieve significantly different concentrations of the charge carriers in the epitaxial film.

  17. Correlated vortex pinning in Si-nanoparticle doped MgB2

    OpenAIRE

    Kusevic, I.; Babic, E.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

    2003-01-01

    The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $T\\geq 28$ K in magnetic fields $B\\leq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_{\\phi}$) and is very different ...

  18. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    Science.gov (United States)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  19. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

    2015-08-30

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  20. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    International Nuclear Information System (INIS)

    Ryu, Sung Ryong; Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

    2015-01-01

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  1. Synthesis, structure, magnetic, electrical and electrochemical properties of Al, Cu and Mg doped MnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hashem, Ahmed M., E-mail: ahmedh242@yahoo.com [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Abuzeid, Hanaa M. [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Narayanan, N. [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Ehrenberg, Helmut [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, D-64287 Darmstadt (Germany); Julien, C.M. [Universite Pierre et Marie Curie, Physicochimie des Electrolytes, Colloides et Sciences Analytiques (PECSA), 4 place Jussieu, 75005 Paris (France)

    2011-10-17

    Highlights: {yields} Al, Mg and Cu doped MnO{sub 2} as cathode in Li-ion batteries. {yields} Pure phase MnO{sub 2} for virgin and doped MnO{sub 2} were obtained. {yields} Doping elements improve the electrical conductivity of MnO{sub 2}. {yields} Electrochemical behaviour of MnO{sub 2} improved after doping by Al, Mg and Cu. - Abstract: Pure and doped manganese dioxides were prepared by wet-chemical method using fumaric acid and potassium permanganate as raw materials. X-ray diffraction patterns show that pure and Al, Cu and Mg doped manganese dioxides (d-MnO{sub 2}) crystallized in the cryptomelane-MnO{sub 2} structure. Thermal analysis show that, with the assistance of potassium ions inside the 2 x 2 tunnel, the presence of Al, Cu and Mg doping elements increases the thermal stability of d-MnO{sub 2}. The electrical conductivity of d-MnO{sub 2} increases in comparison with pure MnO{sub 2}, while Al-doped MnO{sub 2} exhibits the lower resistivity. As shown in the magnetic measurements, the value of the experimental effective magnetic moment of Mn ions decreases with introduction of dopants, which is attributed to the presence of a mixed valency of high-spin state Mn{sup 4+}/Mn{sup 3+}. Doped MnO{sub 2} materials show good capacity retention in comparison with virgin MnO{sub 2}. Al-doped MnO{sub 2} shows the best electrochemical results in terms of capacity retention and recharge efficiency.

  2. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Willander, M; Nur, O; Zhao, Q X; Yang, L L [Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden); Lorenz, M; Cao, B Q; Zuniga Perez, J; Czekalla, C; Zimmermann, G; Grundmann, M [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany); Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Boukos, N; Travlos, A [National Center for Scientific Research ' Demokritos' , Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece); Kwack, H S, E-mail: magwi@itn.liu.s [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , Institut Neel, CNRS and Universit' e Joseph Fourier, F-38042 Grenoble (France)

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  3. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Science.gov (United States)

    Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

    2017-11-01

    Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

  4. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Directory of Open Access Journals (Sweden)

    Abdul Halim N. Syafira

    2017-01-01

    Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

  5. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  6. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  7. Study on Photoelectric Properties of Composite Films of Graphene/Ti02 Nanorods

    Directory of Open Access Journals (Sweden)

    JIN Guo-li

    2017-02-01

    Full Text Available TiOZ nanorods have large specific surface area and the ability of directional transmission electron, based on which can reduce recombination probability of light-generated electrons and holes,and improve the photoelectric conversion efficiency of DSSC. As graphene has low resistivity,good stability and excellent transparency,it can be introduced into anode film to improve the electronic transmission. The TiOZ nanorods were prepared by hydrothermal method,mixed with different quality of graphene. Its length range was 200-300 nm,with a diameter of about 20 nm. The porous graphene/TiOZ nanorods composite film were prepared by using electro- hydrodynamic technique(EHDand compositing TiOZ nanorods with different quality of grapheme. The photoelectric conversion efficiency of the DSSC device prepared with the photo-anode film with graphene mass content of 3 % was 4. 23 %,the photoelectric conversion efficiency increased by 36%,relative to that of no graphene doped TiOZ nanorods photo-anode film.

  8. Vertically etched silicon nano-rods as a sensitive electron detector

    International Nuclear Information System (INIS)

    Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

    2015-01-01

    We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

  9. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  10. Ab-initio study of Mg-doped InN(0001 surface

    Directory of Open Access Journals (Sweden)

    A. Belabbes

    2013-01-01

    Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

  11. Use of MgO doped with a divalent or trivalent metal cation for removing arsenic from water

    Science.gov (United States)

    Moore, Robert C; Holt-Larese, Kathleen C; Bontchev, Ranko

    2013-08-13

    Systems and methods for use of magnesium hydroxide, either directly or through one or more precursors, doped with a divalent or trivalent metal cation, for removing arsenic from drinking water, including water distribution systems. In one embodiment, magnesium hydroxide, Mg(OH).sub.2 (a strong adsorbent for arsenic) doped with a divalent or trivalent metal cation is used to adsorb arsenic. The complex consisting of arsenic adsorbed on Mg(OH).sub.2 doped with a divalent or trivalent metal cation is subsequently removed from the water by conventional means, including filtration, settling, skimming, vortexing, centrifugation, magnetic separation, or other well-known separation systems. In another embodiment, magnesium oxide, MgO, is employed, which reacts with water to form Mg(OH).sub.2. The resulting Mg(OH).sub.2 doped with a divalent or trivalent metal cation, then adsorbs arsenic, as set forth above. The method can also be used to treat human or animal poisoning with arsenic.

  12. Use of MgO doped with a divalent or trivalent metal cation for removing arsenic from water

    Energy Technology Data Exchange (ETDEWEB)

    Moore, Robert C.; Larese, Kathleen Caroline; Bontchev, Ranko Panayotov

    2017-05-30

    Systems and methods for use of magnesium hydroxide, either directly or through one or more precursors, doped with a divalent or trivalent metal cation, for removing arsenic from drinking water, including water distribution systems. In one embodiment, magnesium hydroxide, Mg(OH).sub.2 (a strong adsorbent for arsenic) doped with a divalent or trivalent metal cation is used to adsorb arsenic. The complex consisting of arsenic adsorbed on Mg(OH).sub.2 doped with a divalent or trivalent metal cation is subsequently removed from the water by conventional means, including filtration, settling, skimming, vortexing, centrifugation, magnetic separation, or other well-known separation systems. In another embodiment, magnesium oxide, MgO, is employed, which reacts with water to form Mg(OH).sub.2. The resulting Mg(OH).sub.2 doped with a divalent or trivalent metal cation, then adsorbs arsenic, as set forth above. The method can also be used to treat human or animal poisoning with arsenic.

  13. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

    International Nuclear Information System (INIS)

    Liu Yang; Yang Yongchun

    2016-01-01

    The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

  14. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  15. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  16. The electric field manipulation of magnetization in La{sub 1−x}Sr{sub x}CoO{sub 3}/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q. M.; Li, Q.; Zhou, W. P.; Wang, L. Y.; Yang, Y. T.; Wang, D. H., E-mail: wangdh@nju.edu.cn; Lv, L. Y.; Du, Y. W. [Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Gao, R. L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China)

    2014-04-07

    La{sub 1−x}Sr{sub x}CoO{sub 3} (x = 0.18, 0.33, and 0.5) films were grown epitaxially on piezoelectric Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} substrates by pulsed laser deposition. The magnetization of these films varies with the external electric field, showing the magnetoelectric effect. With different doping content of Sr{sup 2+} ions, the change of magnetization for these films show different behaviors with increasing temperature, which can be attributed to the competition between electric-field-induced changes of spin state and double exchange interaction. This work presents an alternative mechanism to investigate the electric field control of magnetism in magnetoelectric heterostructure by tuning the spin state.

  17. Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Sarla, E-mail: mail2sarlasharma@gmail.com [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Vyas, Rishi [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Neha [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Singh, Vidyadhar [Okinawa Institute of Science and Technology, Graduate University, Okinawa 9040495 (Japan); Singh, Arvind [Department of Physics, Institute of Chemical Technology, Mumbai 400 019 (India); Kataria, Vanjula; Gupta, Bipin Kumar [National Physical Laboratory (CSIR), New Delhi 110012 (India); Vijay, Y.K. [Department of Physics, University of Rajasthan, Jaipur 302055 (India)

    2013-03-05

    Graphical abstract: Demonstration of highly efficient green light emission harvesting from Mg doped ZnO nanoparticles were synthesized via facile wet chemical route with an average particle size ∼15 nm. The resulted nanoparticles exhibit intense green emission peaking at 530 nm upon 325 nm excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg and beyond it exhibits a decrees in emission. The obtained highly luminescent green emission of ZnO nanoparticle would be an ultimate choice for next generation optoelectronics device materials. Highlights: ► Zn{sub 1−x}Mg{sub x}O nanoparticles were prepared by mechanochemical processing. ► High blue emission intensity was observed contrary to previous reports. ► Blue emission is suggested to be originating from the high density of defects. ► Defect density in as-milled condition is very high resulting in high emission. ► Mg promoted non-radiative recombination and lowered intensities. -- Abstract: Highly efficient green light emission was observed from Mg doped ZnO nanoparticles synthesized via facile wet chemical route with an average particle size ∼15 nm. The XRD analysis confirmed the growth of wurtzite phase of ZnO nanoparticles. Moreover, the optical properties of these nanoparticles were investigated by different spectroscopic techniques. The resulted nanoparticles exhibit intense green emission peaking at 530 nm (2.34 eV) upon 325 nm (3.81 eV) excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg, and beyond it exhibits a decrees in emission. Furthermore, by varying the band gap from 3.50 to 3.61 eV, the PL spectra showed a near band edge (NBE) emission at wavelength around 370 nm (3.35 eV) and a broad deep level emission in the visible region. The obtained highly

  18. Light emitting diode based on n-Zn{sub 0.94}M{sub 0.06}O nanorods/p-GaN (M= Cd and Ni) heterojunction under forward and reverse bias

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden); Department of Physics, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Oeurn Chey, Chan [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden); Zargar Shoushtari, Morteza [Department of Physics, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University (Sweden)

    2015-04-15

    In this study, we report on the improvement in the optoelectronic properties of n-ZnO nanorods/p-GaN heterojunction. This was achieved by doping the ZnO with cadmium (Cd) and nickel (Ni). The ZnO and Zn{sub 0.94}M{sub 0.06}O nanorods grown hydrothermally on the p-GaN substrate were used to fabricate the light emitting diodes (LEDs). Structural measurement revealed that nanorods with wurtzite structure having a preferential orientation along the (002) c-axis. The UV–vis spectra show that the optical band gap of Zn{sub 0.94}M{sub 0.06}O nanorods is decreased in comparison to ZnO nanorods. Electrical measurements of the fabricated LEDs show an obvious rectifying behaviour with low threshold voltage. Electroluminescence (EL) characteristics of LEDs operated at forward and reverse bias were investigated. The EL spectra under forward bias show that doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region while the blue peak originating from the p-GaN substrate remains almost unaffected. The effect of doping was to reduce the valence band offsets and consequently more hole injection has occurred leading to the observed enhancement of the broad band in the visible region. Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate. - Highlights: • The reduction of the optical band gap of the M-doped ZnO (M= Cd and Ni) nanorods results in reduction of the valence band offset of the n-Zn{sub 0.94}M{sub 0.06}O nanorods/p-GaN heterojunction LEDs. • Doping ZnO nanorods with Cd and Ni led to an intensity enhancement of the broad peak in the visible region under forward bias. • Under reverse bias all heterojunction LEDs show the blue light emission peak originating from the p-GaN substrate.

  19. Effects of Hole-Doping on Superconducting Properties in MgCNi3 and its Relation to Magnetism

    International Nuclear Information System (INIS)

    Alzamora, M.; Sanchez, D. R.; Cindra, M.; Baggio-Saitovitch, E. M.

    2005-01-01

    Low temperature Moessbauer experiments were performed in Fe-doped and in C-deficiency MgCNi 3 . No magnetic moment was found for Fe in MgC(Ni 0.99 Fe 0.01 ) 3 sample and no magnetic hf field was observed at any temperature for all the samples. These results shown no evidence of magnetic fluctuation or magnetic ordering influencing the depress of superconductivity in hole-doped MgCNi 3 .

  20. Intermodulation distortion and surface resistance in impurity-doped YBCO and MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Agassi, Y.D. [Naval Surface Warfare Center, Carderock Division, Bethesda, MD 20817 (United States); Oates, D.E., E-mail: oates@ll.mit.edu [MIT-Lincoln Laboratory, Lexington, MA 02420 (United States)

    2014-11-15

    Highlights: • Calculations of impurity-doping effects on surface resistance and intermodulation distortion. • The calculations are compared with previously published measurements in YBCO and MgB{sub 2}. • Excellent agreement between calculations and experiments are shown. • The effects of the symmetry of the energy gap are presented and discussed. - Abstract: Calculations of the microwave intermodulation distortion (IMD) and surface resistance of impurity-doped YBCO, MgB{sub 2} and Nb are presented. These are qualitatively distinct superconductors due to their energy-gap symmetries, d-wave (ℓ = 2), i-wave (ℓ = 6) and s-wave (ℓ = 0), respectively. The calculations are compared with previously published IMD and surface-resistance measurements of impurity-doped YBCO and Nb. The agreement between the data and fitted calculations is excellent in all cases. In the absence of IMD and surface-resistance measurements for doped MgB{sub 2}, we present representative predictions. The calculations are based on a Green’s-function approach that yields analytical expressions for the penetration depth and the nonlinear kernel in the constitutive relation. This penetration-depth expression reproduces the measured T{sup 2} low-temperature variation for doped superconductors and the surface-resistance reduction over that of the pure material. Regarding the IMD in superconductors with a nodal energy gap, the effect of doping is to enhance its magnitude and suppress its low-temperature 1/T{sup 2} divergence predicted by the nonlinear Meissner effect.

  1. Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Glaser, E.R.; Murthy, M.; Freitas, J.A.; Storm, D.F.; Zhou, L.; Smith, D.J.

    2007-01-01

    Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (10 17 -10 20 cm -3 ) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3x10 18 cm -3 , the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1x10 17 cm -3 revealed the first evidence for the highly anisotropic g-tensor (g parallel ∼2.19, g perpendicular ∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5x10 6 cm -3 ) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers

  2. Effect of Sn doping on structural, mechanical, optical and electrical properties of ZnO nanoarrays prepared by sol-gel and hydrothermal process

    Science.gov (United States)

    Agarwal, Manish Baboo; Sharma, Akash; Malaidurai, M.; Thangavel, R.

    2018-05-01

    Undoped and Sn doped Zinc oxide nanorods were prepared by two step process: initially growth of seed layers by sol-gel spin coating technique and then zinc oxide nanorods by hydrothermal process using the precursors zinc nitrate hexahydrate, hexamine and tin chloride. The effects on the electrical, optical, mechanical and structural properties for various Sn concentrations were studied. The crystalline phase determination from X-ray diffraction (XRD) confirms that Sn doped ZnO nanorods have hexagonal wurtzite structure. The variations of stress and strain with different doping concentration of Sn in ZnO nanorods were studied. The doping effect on electrical properties and optical bandgap is estimated by current voltage characteristics and absorbance spectra respectively. The surface morphology was studied with field emission scanning electron microscope (FESEM), which shows that the formation of hexagonal nanorods arrays with increasing Sn concentration. The calculated value of Young's modulus of elasticity (Y) for all the samples remains same. These results can be used in optoelectronic devices.

  3. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  4. Influence of the electric polarization on carrier transport and recombinaton dynamics in ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Matthias

    2010-08-16

    The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the

  5. Electron scattering times in ZnO based polar heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  6. Manipulation of inherent characteristics of graphene through N and Mg atom co-doping; a DFT study

    Science.gov (United States)

    Rafique, Muhammad; Mirjat, Nayyar H.; Soomro, Aamir M.; Khokhar, Suhail; Shuai, Yong

    2018-04-01

    First-principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of nitrogen (N) and magnesium (Mg) atom co-doped graphene systems. We observed that, N and Mg atom co-doping in graphene, introduces half-metallic properties in the electronic structure of graphene, introduces ferromagnetism behavior along with new trends in optical properties of graphene. Doping site and concentration of N and Mg atoms in graphene was changed and resulting effects of these changes on aforementioned properties were investigated. Through density of states plots we observed that, Mg atom sp orbitals mainly induced magnetic moments in graphene. It was revealed that, N/Mg atoms substitution in graphene introduces a red shift in absorption spectrum towards visible range and a finite absorption coefficient quantity value in 0 to 3 eV and 7 to 11 eV energy intervals is also produced, that is unavailable for absorption spectrum of intrinsic graphene. Moreover, N/Mg atoms co-doping produces increment in the reflectivity parameter of graphene in low lying energy region, while producing diminishing behavior in the higher energy range. These results offer a possibility to tune electronic, magnetic and optical characteristics of graphene sufficiently for utilization in graphene based spintronic and optoelectronic devices.

  7. Effects of glucose doping on the MgB{sub 2} superconductors using cheap crystalline boron

    Energy Technology Data Exchange (ETDEWEB)

    Parakkandy, Jafar Meethale [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shahabuddin, Mohammed, E-mail: mshahab@ksu.edu.sa [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shah, M. Shahabuddin; Alzayed, Nasser S.; Qaid, Salem A.S.; Madhar, Niyaz Ahmad; Ramay, Shahid M. [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shar, Muhammad Ali [Mechanical Engineering Department, College of Engineering, P.O. Box 800, King Saud University, Riyadh 11421 (Saudi Arabia)

    2015-12-15

    Highlights: • First report on glucose doped MgB{sub 2} superconductor by single step dry mixing approach. • Cheap crystalline boron used for the sample preparation. • Microstructure and superconducting properties of the superconductors are discussed. • Less degradation in low field critical current density observed. • MgB{sub 2} with 2 at. % glucose doped showed the highest J{sub c}, ≈ 2 × 10{sup 4}A/cm{sup 2} for 20 K at 3 T. - Abstract: We report the effect of glucose (C{sub 6}H{sub 12}O{sub 6}) doping on the structural and electromagnetic properties of MgB{sub 2} superconductor fabricated by dry mixing using planetary ball milling. Herein, as-prepared bulk polycrystalline Mg (B{sub 1–x}C{sub x}) {sub 2} samples with different doping levels (x = 0, 2, 4, and 6 at. %) were systematically studied by X-ray diffraction, magnetic and resistivity measurements, and microstructure analysis. When carbon doped, the reduction in critical transition temperature and shrinkage in a-lattice were obviously observed. This resulted in structural distortion of the MgB{sub 2} lattice, and thereby, enhanced an impurity scattering. In addition to these, upper critical field and high-field critical current densities were also enhanced. On the other hand, both pinning force and low-field critical current density are decreased. The high field enhancement and low field degradation are due to increase in impurity scattering and decrease in pinning force respectively.

  8. Compact hematite buffer layer as a promoter of nanorod photoanode performances

    Science.gov (United States)

    Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

    2016-10-01

    The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

  9. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Song, Keun Man

    2014-01-01

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

  10. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

    2014-01-15

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

  11. Synthesis of Nb doped TiO2 nanotube/reduced graphene oxide heterostructure photocatalyst with high visible light photocatalytic activity

    Science.gov (United States)

    Niu, Xiaoyou; Yan, Weijing; Zhao, Hongli; Yang, Jingkai

    2018-05-01

    Limited by the narrowed photoresponse range and unsatisfactory recombination of photoinduced electron-hole pairs, the photocatalytic efficiency of TiO2 is still far below what is expected. Here, we initially doped TiO2 nanotubes (TNTS) by transition metal ion Nb, then it is coupled with reduced graphene oxide (rGO) to construct a heterostructure photocatalyst. The defect state presented in TiO2 leading to the formation of localized midgap states (MS) in the bandgap, which regulating the band structure of TiO2 and extending the optical absorption to visible light region. The internal charge transport and transfer behavior analyzed by electrochemical impedance spectroscopy (EIS) reveal that the coupling of rGO with TNTS results in the formation of electron transport channel in the heterostructure, which makes a great contribution to the photoinduced charge separation. As expected, the Nb-TNTS/rGO exhibits a stable and remarkably enhanced photocatalytic activity in the visible-light irradiation degradation of methylene blue (MB), up to ∼5 times with respect to TNTS, which is attributed to the effective inhibition of charge recombination, the reduction of bandgap and higher redox potential, as well as the great adsorptivity.

  12. Synthesis, structural characterization and dielectric properties of Nb doped BaTiO3/SiO2 core–shell heterostructure

    International Nuclear Information System (INIS)

    Cernea, M.; Vasile, B.S.; Boni, A.; Iuga, A.

    2014-01-01

    Highlights: • Optimal parameters for preparation by sol–gel of core–shell (BT-Nb 0.005 )/SiO 2 are presented in this paper. • Single crystalline BT-Nb 0.005 /SiO 2 core–shell composite with ∼34 nm shell thick was prepared. • The core–shell ceramic exhibits good dielectric properties and ferroelectric characteristics. -- Abstract: Perovskite complex ceramic oxides, BaTiO 3 doped with 0.5 mol%Nb 2 O 5 and then nanocoated with SiO 2 (abbreviated as BT-Nb 0.005 /SiO 2 ) was successful prepared using conventional sol–gel processing. Phase composition, particle morphology, structure, and electric properties of BT-Nb 0.005 core and BT-Nb 0.005 /SiO 2 core–shell were examined and compared, using X-ray diffraction, transmission electron microscopy and, dielectric and ferroelectric measurements. Core–shell composite with well-defined perovskite tetragonal phase of BaTiO 3 was achieved. Furthermore, single crystalline BT-Nb 0.005 /SiO 2 core–nanoshell heterostructure with ∼34 nm shell thick was prepared, which is a novelty in ferroelectrics field. The ferroelectric quality of BT-Nb 0.005 has suffered an alteration when the (BT-Nb 0.005 )/SiO 2 core–shell heterostructure was realized. One-dimensional BT-Nb 0.005 /SiO 2 core–shell heterostructure exhibits an improvement of dielectric losses and a decrease of dielectric constant, compared to uncoated BT-Nb 0.005 . The (BT-Nb 0.005 )/SiO 2 core–shell material could be interesting for application in the composite capacitors

  13. Investigation of structural and optical properties of CaTiO3 powders doped with Mg2+ and Eu3+ ions

    International Nuclear Information System (INIS)

    Oliveira, Larissa H.; Savioli, Julia; Moura, Ana P. de; Nogueira, Içamira C.; Li, Maximo S.; Longo, Elson; Varela, José A.; Rosa, Ieda L.V.

    2015-01-01

    In this work, CaTiO 3 powders doped with Mg 2+ ions and CaTiO 3 powders co-doped with Mg 2+ and Eu 3+ ions were prepared by the polymeric precursor method (PPM). These powders were characterized by different characterization techniques to study the influence of Mg 2+ doping as well as Mg 2+ and Eu 3+ co-doping in structural and optical properties of CaTiO 3 perovskite-type structure. The Rietveld refinement and Micro-Raman analyses suggested the substitution Mg 2+ and Eu 3+ ions in the A-site of CaTiO 3 perovskite. The influence of Mg 2+ doping can be detected by the displacement of calcium and oxygen atomic positions when compared to the non-doped CaTiO 3 powder. When Eu 3+ ions are added to the A-site of this perovskite the excess of positive charge can be compensated by the formation of calcium vacancies. Luminescence data showed that Ca 1-x Mg x TiO 3 and Ca 1x Mg x/2 Eu 2y/3 TiO 3 powders are potential materials for fabrication of lighting devices based on near-UV and blue LED using an excitation wavelength of 397 and/or 450 nm. - Highlights: • CaTiO 3 co-doped with Mg 2+ and Eu 3+ were obtained by the Polymeric Precursor Method. • Incorporation of Mg 2+ and Eu 3+ ions in the CaTiO 3 lattice. • Enhancement of the Eu 3+ photoluminescence

  14. Decoration of PbS nanoparticles on Al-doped ZnO nanorod array thin film with hydrogen treatment as a photoelectrode for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Hsiung; Chen, Chao-Hong [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chen, Dong-Hwang, E-mail: chendh@mail.ncku.edu.tw [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2013-03-25

    Highlights: ► AZO nanorod array thin film is used as a photoanode for solar water splitting. ► Hydrogen treatment and sensitization by PbS nanoparticles enhance photocurrent. ► A novel ITO/FTO-free composite photoelectrode is developed. ► The pre-fabrication and use of an extra TCO thin film substrate is unnecessary. -- Abstract: Al-doped ZnO (AZO) nanorod arrays thin film with hydrogen treatment is directly used as a photoelectrode for solar water splitting without an extra transparent conducting oxide (TCO) thin film because it possesses the functions of TCO thin film and photoactive 1-dimensional nanostructured semiconductor simultaneously. To enhance the absorption in the visible region, PbS nanoparticles decorated the AZO nanorods via successive ionic layer adsorption and reaction route. The PbS nanoparticles have a face-centered cubic structure and their decoration does not destroy the 1-dimensional morphology of AZO nanorod arrays. With increasing the cycle number of PbS nanoparticles decoration, the grain size and loading of PbS nanoparticles become larger gradually which leads to lower energy bandgap and stronger absorption. A maximum photocurrent density of 1.65 mW cm{sup −2} is obtained when the cycle number is 20, which is much higher than those without PbS nanoparticles sensitization or hydrogen treatment. This demonstrates that the AZO nanorod array thin film with hydrogen treatment can be directly used as a photoelectrode without an extra TCO thin film. Because the use of expensive metals can be avoided and the pre-fabrication of TCO thin film substrate is necessary no more, the fabrication of such a composite photoelectrode becomes simple and low-cost. So, it has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption.

  15. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Son, Hyo-Soo; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  16. Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

    Directory of Open Access Journals (Sweden)

    Johnson Truong

    2018-04-01

    Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

  17. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    International Nuclear Information System (INIS)

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  18. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB{sub 2} superconductor nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koc University, RumelifeneriYolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej; Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, 79104 Freiburg (Germany); Acar, Selcuk; Kokal, Ilkin [Pavezyum Kimya Sanayi Dış Ticaret LTD. ŞTI., Tuzla, Istanbul (Turkey); Häßler, Wolfgang [Leibniz Institute for Solid State and Materials Research Dresden (IFW), P.O. Box 270116, 01171 Dresden (Germany)

    2015-04-21

    Undoped and carbon-doped magnesium diboride (MgB{sub 2}) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp{sup 3}-hybridized carbon radicals were detected. A strong reduction in the critical temperature T{sub c} was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra.

  19. Mg- and/or Sr-doped tricalcium phosphate/bioactive glass composites: Synthesis, microstructure and biological responsiveness

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Devis, E-mail: devis.bellucci@unimore.it [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy); Sola, Antonella [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy); Cacciotti, Ilaria [University of Rome " Niccolò Cusano" , UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy); Bartoli, Cristina; Gazzarri, Matteo [Department of Chemistry and Industrial Chemistry, University of Pisa, UdR INSTM — Pisa, Via Risorgimento 35, 56127 Pisa (Italy); Bianco, Alessandra [Department of Enterprise Engineering, INSTM RU “Rome-Tor Vergata”, Via del Politecnico 1, 00133 Roma (Italy); Chiellini, Federica [Department of Chemistry and Industrial Chemistry, University of Pisa, UdR INSTM — Pisa, Via Risorgimento 35, 56127 Pisa (Italy); Cannillo, Valeria [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy)

    2014-09-01

    Presently, there is an increasing interest towards the composites of calcium phosphates, especially β-tricalcium phosphate (TCP), and bioactive glasses. In the present contribution, the recently developed BG{sub C}a/Mix glass has been used because its low tendency to crystallize allows to sinter the composites at relatively low temperature (i.e. 850 °C), thus minimizing the glass devitrification and the interaction with TCP. A further improvement is the introduction of lab-produced TCP powders doped with specific ions instead of non-doped commercial powders, since the biological properties of materials for bone replacement can be modulated by doping them with certain metallic ions, such as Mg and Sr. Therefore, novel binary composites have been produced by sintering the BG{sub C}a/Mix glass with the addition of pure, Mg-substituted, Sr-substituted or Mg/Sr bisubstituted TCP powders. After an accurate characterization of the starting TCP powders and of the obtained samples, the composites have been used as three-dimensional supports for the culture of mouse calvaria-derived pre-osteoblastic cells. The samples supported cell adhesion and proliferation and induced promising mechanisms of differentiation towards an osteoblastic phenotype. In particular, the Mg/Sr bi-doped samples seemed to better promote the differentiation process thus suggesting a combined stimulatory effect of Mg{sup 2+} and Sr{sup 2+} ions.

  20. Mg- and/or Sr-doped tricalcium phosphate/bioactive glass composites: Synthesis, microstructure and biological responsiveness

    International Nuclear Information System (INIS)

    Bellucci, Devis; Sola, Antonella; Niccolò Cusano, UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy))" data-affiliation=" (University of Rome Niccolò Cusano, UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy))" >Cacciotti, Ilaria; Bartoli, Cristina; Gazzarri, Matteo; Bianco, Alessandra; Chiellini, Federica; Cannillo, Valeria

    2014-01-01

    Presently, there is an increasing interest towards the composites of calcium phosphates, especially β-tricalcium phosphate (TCP), and bioactive glasses. In the present contribution, the recently developed BG C a/Mix glass has been used because its low tendency to crystallize allows to sinter the composites at relatively low temperature (i.e. 850 °C), thus minimizing the glass devitrification and the interaction with TCP. A further improvement is the introduction of lab-produced TCP powders doped with specific ions instead of non-doped commercial powders, since the biological properties of materials for bone replacement can be modulated by doping them with certain metallic ions, such as Mg and Sr. Therefore, novel binary composites have been produced by sintering the BG C a/Mix glass with the addition of pure, Mg-substituted, Sr-substituted or Mg/Sr bisubstituted TCP powders. After an accurate characterization of the starting TCP powders and of the obtained samples, the composites have been used as three-dimensional supports for the culture of mouse calvaria-derived pre-osteoblastic cells. The samples supported cell adhesion and proliferation and induced promising mechanisms of differentiation towards an osteoblastic phenotype. In particular, the Mg/Sr bi-doped samples seemed to better promote the differentiation process thus suggesting a combined stimulatory effect of Mg 2+ and Sr 2+ ions

  1. Mössbauer and magnetic studies of surfactant mediated Ca-Mg doped ferrihydrite nanoparticles.

    Science.gov (United States)

    Layek, Samar; Mohapatra, M; Anand, S; Verma, H C

    2013-03-01

    Ultrafine (2-5 nm) particles of amorphous Ca-Mg co-doped ferrihydrite have been synthesized by surfactant mediated co-precipitation method. The evolution of the amorphous ferrihydrite by Ca-Mg co-doping is quite different from our earlier investigations on individual doping of Ca and Mg. Amorphous phase of ferrihydrite for the present study has been confirmed by X-ray diffraction (XRD) and Mössbauer spectroscopy at room temperature and low temperatures (40 K and 20 K). Hematite nanoparticles with crystallite size about 8, 38 and 70 nm were obtained after annealing the as-prepared samples at 400, 600 and 800 degrees C respectively in air atmosphere. Superparamagnetism has been found in 8 nm sized hematite nanoparticles which has been confirmed from the magnetic hysteresis loop with zero remanent magnetization and coercive field and also from the superparamagnetic doublet of its room temperature Mössbauer spectrum. The magnetic properties of the 38 and 70 nm sized particles have been studied by room temperature magnetic hysteresis loop measurements and Mössbauer spectroscopy. The coercive field in these hematite nanoparticles increases with increasing particle size. Small amount of spinel MgFe2O4 phase has been detected in the 800 degrees C annealed sample.

  2. Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

    Science.gov (United States)

    Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

    2018-02-01

    Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  3. Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires

    International Nuclear Information System (INIS)

    Heo, Y.W.; Abernathy, C.; Pruessner, K.; Sigmund, W.; Norton, D.P.; Overberg, M.; Ren, F.; Chisholm, M.F.

    2004-01-01

    The synthesis, structure, and optical properties of one-dimensional heteroepitaxial cored (Zn,Mg)O semiconductor nanowires grown by a catalyst-driven molecular beam epitaxy technique are discussed. The structures form spontaneously in a Zn, Mg and O 2 /O 3 flux, consisting of a single crystal, Zn-rich Zn 1-x Mg x O(x 1-y Mg y O(y>>0.02) sheath. High resolution Z-contrast scanning transmission electron microscopy shows core diameters as small as 4 nm. The cored structure forms spontaneously under constant flux due to a bimodal growth mechanism in which the core forms via bulk like vapor-liquid-solid growth, while the outer sheath grows as a heteroepitaxial layer. Temperature-dependent photoluminescence shows a slight blueshift in the near band edge peak, which is attributed to a few percent Mg doping in the nanoscale ZnO core. The catalyst-driven molecular beam epitaxy technique provides for site-specific nanorod growth on arbitrary substrates

  4. Hydrothermal Synthesis and Biocompatibility Study of Highly Crystalline Carbonated Hydroxyapatite Nanorods

    Science.gov (United States)

    Xue, Caibao; Chen, Yingzhi; Huang, Yongzhuo; Zhu, Peizhi

    2015-08-01

    Highly crystalline carbonated hydroxyapatite (CHA) nanorods with different carbonate contents were synthesized by a novel hydrothermal method. The crystallinity and chemical structure of synthesized nanorods were studied by Fourier transform infrared spectroscopy (FTIR), X-ray photo-electronic spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The biocompatibility of synthesized CHA nanorods was evaluated by cell viability and alkaline phosphatase (ALP) activity of MG-63 cell line. The biocompatibility evaluation results show that these CHA nanorods are biologically active apatites and potentially promising bone-substitute biomaterials for orthopedic application.

  5. Critical current density in MgB2 bulk samples after co-doping with nano-SiC and poly zinc acrylate complexes

    International Nuclear Information System (INIS)

    Zhang, Z.; Suo, H.; Ma, L.; Zhang, T.; Liu, M.; Zhou, M.

    2011-01-01

    SiC and poly zinc acrylate complexes co-doped MgB 2 bulk has been synthesized. Co-doping can cause higher carbon substitutions and the second phase particles. Co-doping can further increase the Jc value of MgB 2 bulk on the base of the SiC doping. The co-doped MgB 2 bulk samples have been synthesized using an in situ reaction processing. The additives is 8 wt.% SiC nano powders and 10 wt.% [(CH 2 CHCOO) 2 Zn] n poly zinc acrylate complexes (PZA). A systematic study was performed on samples doped with SiC or PZA and samples co-doped with both of them. The effects of doping and co-doping on phase formation, microstructure, and the variation of lattice parameters were studied. The amount of substituted carbon, the critical temperature (T c ) and the critical current density (J c ) were determined. The calculated lattice parameters show the decrease of the a-axis, while no obvious change was detected for c-axis parameter in co-doped samples. This indicates that the carbon was substituted by boron in MgB 2 . The amount of substituted carbon for the co-doped sample shows an enhancement compared to that of the both single doped samples. The co-doped samples perform the highest J c values, which reaches 3.3 x 10 4 A/cm 2 at 5 K and 7 T. It is shown that co-doping with SiC and organic compound is an effective way to further improve the superconducting properties of MgB 2 .

  6. Redox Additive-Improved Electrochemically and Structurally Robust Binder-Free Nickel Pyrophosphate Nanorods as Superior Cathode for Hybrid Supercapacitors.

    Science.gov (United States)

    Sankar, Kalimuthu Vijaya; Seo, Youngho; Lee, Su Chan; Chan Jun, Seong

    2018-03-07

    For several decades, one of the great challenges for constructing a high-energy supercapacitor has been designing electrode materials with high performance. Herein, we report for the first time to our knowledge a novel hybrid supercapacitor composed of battery-type nickel pyrophosphate one-dimensional (1D) nanorods and capacitive-type N-doped reduced graphene oxide as the cathode and anode, respectively, in an aqueous redox-added electrolyte. More importantly, ex situ microscopic images of the nickel pyrophosphate 1D nanorods revealed that the presence of the battery-type redox additive enhanced the charge storage capacity and cycling life as a result of the microstructure stability. The nickel pyrophosphate 1D nanorods exhibited their maximum specific capacitance (8120 mF cm -2 at 5 mV s -1 ) and energy density (0.22 mWh cm -2 at a power density of 1.375 mW cm -2 ) in 1 M KOH + 75 mg K 3 [Fe(CN) 6 ] electrolyte. On the other side, the N-doped reduced graphene oxide delivered an excellent electrochemical performance, demonstrating that it was an appropriate anode. A hybrid supercapacitor showed a high specific capacitance (224 F g -1 at a current density of 1 A g -1 ) and high energy density (70 Wh kg -1 at a power density of 750 W kg -1 ), as well as a long cycle life (a Coulombic efficiency of 96% over 5000 cycles), which was a higher performance than most of those in recent reports. Our results suggested that the materials and redox additive in this novel design hold great promise for potential applications in a next-generation hybrid supercapacitor.

  7. Synthesis and oxygen vacancy related NO{sub 2} gas sensing properties of ZnO:Co nanorods arrays gown by a hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Changwei, E-mail: qingyihaiyanas@163.com; Liang, Feng; Xue, Shuwen

    2015-10-30

    Highlights: • Co doped ZnO:Co nanorods were grown by hydrothermal method. • The NO{sub 2} response reaches a maximum value of 88 at 210 °C. • The stability of NO{sub 2} on ZnO is enhanced with the presence of V{sub O}. - Abstract: Highly ordered Co doped ZnO:Co nanorods arrays with Co concentrations of 1.6, 1.9 and 3.1 at% were uniformly grown on FTO glass substrate by hydrothermal method. The X-ray diffraction patterns of the undoped and Co doped ZnO nanorods revealed characteristic peaks of (1 0 0), (0 0 2), (1 0 1), (1 0 3) and (1 1 2), corresponding to the hexagonal wurtzite phase of ZnO. For ZnO:Co nanorods with Co concentrations of 3.1 at%, the NO{sub 2} response reached a maximum value of 88 at temperature of 210 °C. However, the response of ZnO:Co nanorods with Co concentrations of 3.1 at% decreased from 82 to 29 with the increasing of O{sub 2} annealing temperature from 0 to 700 °C. As confirmed by the XPS, PL, Raman and I–V results, the oxygen vacancies and electron concentrations were the dominating effects and an oxygen vacancy mediated NO{sub 2} sensing mechanism was presented and discussed.

  8. Structural and optical studies of Mg doped nanoparticles of chromium oxide (Cr2O3) synthesized by co-precipitation method

    Science.gov (United States)

    Singh, Jarnail; Verma, Vikram; Kumar, Ravi

    2018-04-01

    We present here the synthesization, structural and optical studies of Mg doped nanoparticles of Chromium oxide (Cr2O3) prepared using co-precipitation method. These samples were characterized using powder X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman spectroscopy and UV-Vis spectroscopy techniques. We have demonstrated that there is negligible change in optical band gap with the Mg doping. The prepared Cr2O3 nanoparticles are spherical in shape, but they are transformed into platelets when doped with Mg. The XRD studies reveal that the Mg doping in Cr2O3 doesn't affect the structure of Chromium oxide (Cr2O3).

  9. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin

    2013-01-01

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm 2 /V s and an on–off current ratio over 10 6 . •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm 2 /V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm 2 /V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10 6 . Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films

  10. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Su, Bo-Yuan [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2013-12-15

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm{sup 2}/V s and an on–off current ratio over 10{sup 6}. •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm{sup 2}/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm{sup 2}/V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10{sup 6}. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

  11. Flux pinning landscape up to 25 T in SmBa2Cu3O y films with BaHfO3 nanorods fabricated by low-temperature growth technique

    Science.gov (United States)

    Tsuchiya, Yuji; Miura, Shun; Awaji, Satoshi; Ichino, Yusuke; Matsumoto, Kaname; Izumi, Teruo; Watanabe, Kazuo; Yoshida, Yutaka

    2017-10-01

    REBa2Cu3O y superconducting tapes are appropriate for high field magnet applications at low temperatures (i.e. below liquid nitrogen temperature). To clarify the morphology and the volume of the effective pinning center at low temperatures, we used a low-temperature growth technique to fabricate SmBa2Cu3O y (SmBCO) films with various amounts of BaHfO3 (BHO) nanorods onto MgO-buffered metal substrates produced by ion-beam-assisted deposition; we investigated their flux pinning properties using a 25 T cryogen-free superconducting magnet that was recently developed at Tohoku University. According to the microstructural analysis using transmission electron microscopy, the BHO nanorods have a content-dependent morphology and are aligned for the higher content. The inclined and discontinuous BHO nanorods were observed in SmBCO films with BHO contents up to 3.8 vol%; they show an excellent flux pinning force density (1.5 TN m-3 at 21 T and 4.2 K) even when the magnetic field is perpendicular to the films. Based on the effective mass model for the flux pinning, the random pinning centers are dominant at low temperatures. The correlated flux pinning is stronger for aligned nanorods; however, the random pinning center becomes weaker in the 4.5 vol% BHO-doped films. Therefore, the optimal BHO doping level is approximately 3.8 vol% in terms of the amplitude of the critical current density and the anisotropy from 4.2 K to 20 K because this provides the best mixture of correlated and random flux pinning centers.

  12. CO{sub 2} capture in Mg oxides doped with Fe and Ni; Captura de CO{sub 2} en oxidos de Mg dopados con Fe y Ni

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez S, I. F.

    2016-07-01

    In this work the CO{sub 2} capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe{sub 2}O{sub 3} phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO{sub 2} in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO{sub 2} capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO{sub 2} capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO{sub 2} capture. The different stages

  13. Photoluminescence and thermoluminescence properties of Eu2+ doped and Eu2+ ,Dy3+ co-doped Ba2 MgSi2 O7 phosphors.

    Science.gov (United States)

    Sao, Sanjay Kumar; Brahme, Nameeta; Bisen, D P; Tiwari, Geetanjali

    2016-11-01

    In this work, we report the preparation, characterization, comparison and luminescence mechanisms of Eu 2 + -doped and Eu 2 + ,Dy 3 + -co-doped Ba 2 MgSi 2 O 7 (BMSO) phosphors. Prepared phosphors were synthesized via a high temperature solid-state reaction method. All prepared phosphors appeared white. The phase structure, particle size, and elemental analysis were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) analysis. The luminescence properties of the phosphors were investigated by thermoluminescence (TL) and photoluminescence (PL). The PL excitation and emission spectra of Ba 2 MgSi 2 O 7 :Eu 2 + showed the peak to be around 381 nm and 490 nm respectively. The PL excitation spectrum of Ba 2 MgSi 2 O 7 :Eu 2 + Dy 3 + showed the peak to be around 341 nm and 388 nm, and the emission spectrum had a broad band around 488 nm. These emissions originated from the 4f 6 5d 1 to 4f 7 transition of Eu 2 + . TL analysis revealed that the maximum TL intensity was found at 5 mol% of Eu 2 + doping in Ba 2 MgSi 2 O 7 phosphors after 15 min of ultraviolet (UV) light exposure. TL intensity was increased when Dy 3 + ions were co-doped in Ba 2 MgSi 2 O 7 :Eu 2 + and maximum TL intensity was observed for 2 mol% of Dy 3 + . TL emission spectra of Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors were found at 500 nm. TL intensity increased with UV exposure time up to 15 min, then decreased for the higher UV radiation dose for both Eu doping and Eu,Dy co-doping. The trap depths were calculated to be 0.54 eV for Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and 0.54 eV and 0.75 eV for Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors. It was observed that co-doping with small amounts of Dy 3 + enhanced the thermoluminescence properties of Ba 2 MgSi 2 O 7 phosphor. Copyright © 2016 John Wiley & Sons, Ltd. [Correction added on 5 April 2016, after first online publication: The

  14. Enhancement of the critical current density and flux pinning of MgB2 superconductor by nanoparticle SiC doping

    Science.gov (United States)

    Dou, S. X.; Soltanian, S.; Horvat, J.; Wang, X. L.; Zhou, S. H.; Ionescu, M.; Liu, H. K.; Munroe, P.; Tomsic, M.

    2002-10-01

    Doping of MgB2 by nano-SiC and its potential for the improvement of flux pinning were studied for MgB2-x)(SiCx/2 with x=0, 0.2, and 0.3 and for 10 wt % nano-SiC-doped MgB2 samples. Cosubstitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5 K, introducing intragrain pinning centers effective at high fields and temperatures, and significantly enhancing Jc and Hirr. Compared to the undoped sample, Jc for the 10 wt % doped sample increased by a factor of 32 at 5 K and 8 T, 42 at 20 K and 5 T, and 14 at 30 K and 2 T. At 20 K and 2 T, the Jc for the doped sample was 2.4 x105 A/cm2, which is comparable to Jc values for the best Ag/Bi-2223 tapes. At 20 K and 4 T, Jc was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. The magnetic Jc is consistent with the transport Jc which remains at 20 000 A/cm2 even at 10 T and 5 K for the doped sample, an order of magnitude higher than the undoped one. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using a formula of MgBxSiyCz instead of pure MgB2.

  15. Graded core/shell semiconductor nanorods and nanorod barcodes

    Science.gov (United States)

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  16. Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

    Directory of Open Access Journals (Sweden)

    Xiaoyu Bi

    2018-02-01

    Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  17. Effects of TiC doping on the upper critical field of MgB2 superconductors

    International Nuclear Information System (INIS)

    Yan, S.C.; Zhou, L.; Yan, G.; Lu, Y.F.

    2008-01-01

    TiC doped MgB 2 bulks were fabricated by two-step reaction method. The sample with a nominal compositions of Mg(B 0.95 (TiC) 0.05 ) 4 was first sintered at 1000 deg. C for 0.5 h. An appropriate amount of Mg was added to reach the stoichiometry of Mg(B 0.95 (TiC) 0.05 ) 2 , which was sintered at 750 deg. C for 2 h. The H c2 for the micro-TiC doped MgB 2 reached 12 T at 20 K. And J c is 5.3 x 10 4 A/cm 2 at 20 K and 1 T. The results indicate that the two-step reaction method could effectively introduce the carbon in TiC into the MgB 2 crystalline lattice, and therefore improve the upper critical field

  18. Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

    Directory of Open Access Journals (Sweden)

    Jie Zhu

    2015-01-01

    Full Text Available Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by the shape of the seeds used. Exposure of Cu2O{111} and Cu2O{001} favored when the overgrowth happened on Au{111} and Au{001} surface, respectively. The size of the product can also be tuned by the amount of the seeds. The results reported here provide a thinking clue to modulate the shape and size of core-shell nanocrystals, which is useful in developing new materials with desired performance.

  19. Li-doped MgO as catalysts for oxidative coupling of methane: A positron annihilation study

    Science.gov (United States)

    Dai, G. H.; Yan, Q. J.; Wang, Y.; Liu, Q. S.

    1991-08-01

    Magnesium oxides intentionally doped with lithium (with a maximum Li content of 40 tool%) for use as catalysts for oxidative coupling of methane were characterized by means of positron annihilation. The positron lifetime spectra, which could be reasonably well interpreted within the framework of the well-known trapping model, depend on the amount of Li doping of the MgO suggesting that positrons are trapped at dispersed small Li 2CO 3 precipitates. Very similar dependencies on lithium doping of the C 2 selectivity and the positron trapping rate ϰ imply an intimate relationship between the concentration of [Li] 0-centers (also referred to as [Li +O -] centers) and the selective activity of Li/MgO during catalytic reactions.

  20. Synergistic effect of Ti and F co-doping on dehydrogenation properties of MgH2 from first-principles calculations

    International Nuclear Information System (INIS)

    Zhang, J.; Huang, Y.N.; Mao, C.; Peng, P.

    2012-01-01

    Highlights: ► The co-incorporation of Ti and F into MgH 2 lattice is energetically favorable. ► The incorporated Ti and F in MgH 2 preferably generate TiH 2 and MgF 2 , respectively. ► The synergistic effect of Ti and F is superior to that of pure Ti. ► The weakened interactions of Mg–H explain enhanced dehydrogenation properties. - Abstract: The energetic and electronic properties of MgH 2 co-doped with Ti and F are investigated using first-principles calculations based on density functional theory. The calculation results show that incorporation of Ti combined with F atoms into MgH 2 lattice is energetically favorable relative to single incorporation of Ti atom. After dehydrogenation, the co-doped Ti and F in MgH 2 preferably generate TiH 2 and MgF 2 , respectively. Comparatively, the combined effect of Ti and F in improving the dehydrogenation properties of MgH 2 is superior to that of pure Ti. These results provide a reasonable explanation for experimental observations. Analysis of electronic structures suggests the enhanced dehydrogenation properties of doped MgH 2 can be attributed to the weakened bonding interactions between Mg and H due to foreign species doping.

  1. Electroluminescence dependence on the organic thickness in ZnO nano rods/Alq3 heterostructure devices.

    Science.gov (United States)

    Kan, Pengzhi; Wang, Yongsheng; Zhao, Suling; Xu, Zheng; Wang, Dawei

    2011-04-01

    ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Their crystallization and morphology are detected by XRD and SEM, respectively. The results show that the ZnO nanorod array has grown primarily along a direction aligned perpendicular to the ITO substrate. The average height and diameter of the nanorods is about 130 nm and 30 nm, respectively. Then ZnO nano rods/Alq3 heterostructure LEDs are prepared by thermal evaporation of Alq3 molecules. The thicknesses of the Alq3 layers are 130 nm, 150 nm, 170 nm and 190 nm, respectively. The electroluminescence of the devices is detected under different DC bias voltages. The exciton emission of Alq3 is detected in all devices. When the thickness of Alq3 is 130 nm, the UV electroluminescence of ZnO is around 382 nm, and defect emissions around 670 nm and 740 nm are detected. Defect emissions of ZnO nanorods are prominent. When the thickness of Alq3 increases to over 170 nm, it is difficult to observe defect emissions from the ZnO nano rods. In such devices, the exciton emission of Alq3 is more prominent than other emissions under different bias voltage.

  2. Magnetic field control of fluorescent polymer nanorods

    International Nuclear Information System (INIS)

    Kim, Taehyung; He, Le; Bardeen, Christopher J; Morales, Jason R; Beyermann, W P

    2011-01-01

    Nanoscale objects that combine high luminescence output with a magnetic response may be useful for probing local environments or manipulating objects on small scales. Ideally, these two properties would not interfere with each other. In this paper, we show that a fluorescent polymer host material can be doped with high concentrations of 20–30 nm diameter magnetic γ-Fe 2 O 3 particles and then formed into 200 nm diameter nanorods using porous anodic alumina oxide templates. Two different polymer hosts are used: the conjugated polymer polydioctylfluorene and also polystyrene doped with the fluorescent dye Lumogen Red. Fluorescence decay measurements show that 14% by weight loading of the γ-Fe 2 O 3 nanoparticles quenches the fluorescence of the polydioctylfluorene by approximately 33%, but the polystyrene/Lumogen Red fluorescence is almost unaffected. The three-dimensional orientation of both types of nanorods can be precisely controlled by the application of a moderate strength (∼0.1 T) external field with sub-second response times. Transmission electron microscope images reveal that the nanoparticles cluster in the polymer matrix, and these clusters may serve both to prevent fluorescence quenching and to generate the magnetic moment that rotates in response to the applied magnetic field.

  3. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Science.gov (United States)

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  4. Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

    Science.gov (United States)

    Bai, Yu; Jie Wang, Zhan; Cui, Jian Zhong; Zhang, Zhi Dong

    2018-05-01

    Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.

  5. Thermoluminescence responses of photon- and electron-irradiated lithium potassium borate co-doped with Cu+Mg or Ti+Mg

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ramli, A.T.; Saleh, M.A.; Saripan, M.I.; Alzimami, K.; Min Ung, Ngie

    2013-01-01

    New glasses Li 2 CO 3 –K 2 CO 3 –H 3 BO 3 (LKB) co-doped with CuO and MgO, or with TiO 2 and MgO, were synthesized by the chemical quenching technique. The thermoluminescence (TL) responses of LKB:Cu,Mg and LKB:Ti,Mg irradiated with 6 MV photons or 6 MeV electrons were compared in the dose range 0.5–4.0 Gy. The standard commercial dosimeter LiF:Mg,Ti (TLD-100) was used to calibrate the TL reader and as a reference in comparison of the TL properties of the new materials. The dependence of the responses of the new materials on 60 Co dose is linear in the range of 1–1000 Gy. The TL yields of both of the co-doped glasses and TLD-100 are greater for electron irradiation than for photon irradiation. The TL sensitivity of LKB:Ti,Mg is 1.3 times higher than the sensitivity of LKB:Cu,Mg and 12 times less than the sensitivity of TLD-100. The new TL dosimetric materials have low effective atomic numbers, good linearity of the dose responses, excellent signal reproducibility, and a simple glow curve structure. This combination of properties makes them suitable for radiation dosimetry. - Highlights: • Enhancement of about three times has been shown with the increment of MgO. • A comparison was carried out between the TL responses of the prepared dosimeters and TLD-100. • The prepared dosimeters show simple glow curve, low Z material and excellent reproducibility. • The TL measurements show a linear dose response in a long span of exposures. • The electron response shows 1.18 times greater than photon response for the prepared dosimeters

  6. Zinc vanadate nanorods and their visible light photocatalytic activity

    International Nuclear Information System (INIS)

    Pei, L.Z.; Lin, N.; Wei, T.; Liu, H.D.; Yu, H.Y.

    2015-01-01

    Highlights: • Zinc vanadate nanorods have been synthesized by a facile hydrothermal process. • The size of zinc vanadate nanorods can be controlled by growth conditions. • Zinc vanadate nanorods show good photocatalytic activities of methylene blue under solar light. - Abstract: Zinc vanadate nanorods have been synthesized by a simple hydrothermal process using zinc acetate and sodium vanadate as the raw materials. The zinc vanadate nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and solid UV–vis diffuse reflectance spectrum. XRD pattern and HRTEM image show that the zinc vanadate nanorods are composed of single crystalline monoclinic Zn 2 V 2 O 7 phase. SEM and TEM observations show that the diameter and length of the zinc vanadate nanorods are 50–100 nm and about 5 μm, respectively. Sodium dodecyl sulfonate (SDS) has an essential role in the formation of zinc vanadate nanorods. The SDS-assisted nucleation and growth process have been proposed to explain the formation and growth of the zinc vanadate nanorods. Solid UV–vis diffuse reflectance spectrum shows that the zinc vanadate nanorods have a band gap of 2.76 eV. The photocatalytic activities of the zinc vanadate nanorods have been evaluated by the photocatalytic degradation of methylene blue (MB) under solar light irradiation. The MB with the concentration of 10 mg L −1 can be degraded totally under the solar light irradiation for 4 h. It is suggested that the zinc vanadate nanorods exhibit promising application potential for the degradation of organic pollutants under solar light irradiation

  7. Phase transitions in ZnTe co-doped with Mg and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V.A.; Sorokina, L.P. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, Av. IPN 2508, Mexico, D.F., 07360 (Mexico); Rodriguez de Santiago, M. [Departamento de Ingenieria Quimica Petrolera, IPN, Edif. 8, Mexico, D.F., 07738 (Mexico)

    2007-05-15

    Self-assembling of 1O4Mg tetrahedral clusters in ZnTe isoelectronically co-doped with Mg and oxygen in the ultra dilute oxygen impurity limit is described by a phase diagram. The occurrence of 1O4Mg clusters is a result of the second-order transition. The final stage of self-assembling when all oxygen impurities are in 1O4Mg clusters has to be reached also as a result of the second-order transition at the temperature close to the temperature of the occurrence of these clusters. The conditions of these phase transitions are obtained. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. UV Thermoluminescence and Phosphorescence Properties of Mg2+ and Nd3+ Doped Nanostructured Al2O3

    International Nuclear Information System (INIS)

    Bitencourt, J F S; Goncalves, K A; Tatumi, S H; Marcos, P J B

    2010-01-01

    Mg 2+ and Nd 3+ doped aluminium oxide samples were produced by polymer calcination method. Mg 2+ doped samples did not exhibited significant fluorescence emission, using IR (LED, emission centered at 862nm) or green (Xe-lamp plus optical filter, emission centered at 520 nm) sources. Nonetheless, high thermostimulated luminescence was detected, with high emission peak at 190 0 C. A nanoscopic layer (about 50 nm width) of magnesium spinel was observed by Transmission Electronic Microscopy (TEM) for 2.61mol% doped sample; this layer can be the responsible for TL enhancement. Nd 3+ doped sample exhibited low phosphorescence emission in the UV (Schott U-340) using IR source. TL peaks were detected at 185 and 265 0 C; the intermediary peak showed the highest emission. Occurrence of NdAl and NdAl 2 structures were detected in 5 mol% doped sample and NdAl 2 and NdAl 4 structures in 10 mol% doped sample.

  9. First-principles investigation of Fe-doped MgSiO3-ilmenite

    International Nuclear Information System (INIS)

    Stashans, Arvids; Rivera, Krupskaya; Pinto, Henry P.

    2012-01-01

    First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO 3 mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using ΔSCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO 3 . Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe⇒Mg reaction can be described as substitutionally labile with Fe 2+ complex being found in the high-spin state at low pressure MgSiO 3 -ilmenite conditions.

  10. Effect of malic acid doping on the structural and superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N.; Sudesh; Stuti Rani; Varma, G.D.

    2010-01-01

    The samples have been prepared via standard solid state reaction route with nominal compositions MgB 2 + x wt% malic acid (x = 0, 5 and 10) by sintering at two different temperatures: 800 and 850 deg C in argon atmosphere. Improvement in upper critical fields (H c2 ) and irreversibility field (H irr ) of doped samples as compared to undoped samples have been observed. At 10 K, critical current densities (J c ) of the 5 and 10 wt% malic acid doped MgB 2 samples sintered at 850 deg C have higher values as compared to undoped sample sintered at the same temperature in the fields greater than 3 T. However, J c values of 5 wt% malic acid doped sample are higher than 10 wt% doped sample in the entire applied field region (0 - 7 T). In case of the samples sintered at 800 deg C improvement in J c values of 5 wt% doped sample have been found in entire field region as compared to undoped sample. On the other hand we see deterioration in J c values of 10 wt% doped samples sintered at 800 deg C as compared to undoped samples sintered at same temperature. The correlations between structural and superconducting properties will be described and discussed in this paper. (author)

  11. High selectivity and stability of Mg-doped Al-MCM-41 for in-situ catalytic upgrading fast pyrolysis bio-oil

    International Nuclear Information System (INIS)

    Karnjanakom, Surachai; Suriya-umporn, Thanyamai; Bayu, Asep; Kongparakul, Suwadee; Samart, Chanatip; Fushimi, Chihiro; Abudula, Abuliti; Guan, Guoqing

    2017-01-01

    Highlights: • Mg-doped Al-MCM-41 was developed for in-situ catalytic upgrading of bio-oils. • Mg/Al-MCM-41 exhibited high selectivity to aromatic hydrocarbons. • The ratio of produced hydrocarbon reached up to 80% in upgraded bio-oil. • 1 wt.% Mg/Al-MCM-41 showed the highest catalytic activity. • Mg/Al-MCM-41 had stable reusability due to its coking inhabitation ability. - Abstract: In-situ catalytic upgrading of bio-oils derived from the fast pyrolysis of cellulose, lignin or sunflower stalk over Mg-doped Al-MCM-41 was investigated in details. It is found that Mg species with doping amounts ranged between 0.25 and 10 wt.% was well dispersed on Al-MCM-41, and that doping Mg on Al-MCM-41 effectively adjusted the acidity and basicity of the catalysts, resulting in significant improvement of bio-oil quality. Mg/Al-MCM-41 exhibited high selective conversion of bio-oils derived from cellulose, lignin or sunflower stalk to high value-added aromatic hydrocarbons via catalytic cracking, deoxygenation and aromatization. In the upgraded bio-oil, the relative total hydrocarbon amount reached up to approximately ≥80%, which consisted of aromatic hydrocarbon approximately 76% and aliphatic hydrocarbon approximately 4% for all feedstocks. The selectivity to the monocyclic aromatic hydrocarbons (MAHs) such as benzene, toluene and xylenes (BTXs) increased while the coke formed on the catalyst decreased with the increase in Mg doping amount. 1 wt.% Mg/Al-MCM-41 resulted in the highest relative total hydrocarbon amount in the upgraded bio-oil at lower catalytic deoxygenation temperature, and showed stable reusability for at least 5 cycles. It is expected that Mg/Al-MCM-41 can be widely applied for bio-oil upgrading in a practical process.

  12. La-doped BaTiO3 heterostructures: Compensating the polarization discontinuity

    Directory of Open Access Journals (Sweden)

    D. P. Kumah

    2013-12-01

    Full Text Available We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO3-SrTiO3 interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO3 film.

  13. Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy

    International Nuclear Information System (INIS)

    Yeoh, W.K.; Zheng, R.K.; Ringer, S.P.; Li, W.X.; Xu, X.; Dou, S.X.; Chen, S.K.; MacManus-Driscoll, J.L.

    2011-01-01

    Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB 2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB 2 , which is basically due to lattice strain.

  14. Thermoluminescence of magnesium doped zirconium oxide (ZrO2:Mg) UV irradiated

    International Nuclear Information System (INIS)

    Rivera Montalvo, Teodoro; Furetta, Claudio

    2008-01-01

    Full text: The monitoring of ultraviolet radiation (UVR) different thermoluminescent (TL) materials have been used to measure UVR. UV dosimetry using thermoluminescence phenomena has been suggested in the past by several authors. This technique has an advantage over others methods due to the readout of the samples. Other advantages of these phosphors are their small size, portability, lack of any power requirements, linear response to increasing radiation dose and high sensitivity. Zirconium oxide, recently received full attention in view of their possible use as thermoluminescent dosimeter (TLD), if doped with suitable activators, in radiation dosimetry. In the present investigation thermoluminescent (TL) properties of magnesium doped zirconium oxide (ZrO 2 :Mg) under ultraviolet radiation (UVR) were studied. The ZrO 2 :Mg powder of size 30-40 nm, having mono clinical structure, exhibit a thermoluminescent glow curve with one peak centered at 180 C degrees. The TL response of ZrO 2 :Mg as a function ultraviolet radiation exhibits four maxima centered at 230, 260, 310 and 350 nmn. TL response of ZrO 2 :Mg as a function of spectral irradiance of UV Light was linear in a wide range. Fading and reusability of the phosphor were also studied. The results showed that ZrO 2 :Mg nano powder has the potential to be used as a UV dosemeter in UVR dosimetry. (author)

  15. Preparation and characterization of Ti-doped MgO nanopowders by a modified coprecipitation method

    International Nuclear Information System (INIS)

    Wang Wei; Qiao Xueliang; Chen Jianguo; Tan Fatang

    2008-01-01

    Ti-doped MgO nanopowders were prepared via a chemical coprecipitation method using acetic acid as a modifier in the presence of the surfactant polyethylene glycol (PEG 400). The as-obtained products were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), differential thermal analysis (DTA) and transmission electron microscopy (TEM). The results show that titanium atoms have been successfully incorporated into the crystal lattice of MgO with periclase structure. The modifier, acetic acid, can significantly reduce the particle size, and improve size distribution and dispersion of nanoparticles. In addition, the effect of doped titanium on the structure and morphology of magnesium oxide was also investigated

  16. Superconducting and normal state properties of carbon doped and neutron irradiated MgB2

    International Nuclear Information System (INIS)

    Wilke, R.H.T.; Samuely, P.; Szabo, P.; Holanova, Z.; Bud'ko, S.L.; Canfield, P.C.; Finnemore, D.K.

    2007-01-01

    Current research in MgB 2 focuses on the effects various types of perturbations have on the superconducting properties of this novel two-gap superconductor. In this article we summarize the effects of carbon doping and neutron irradiation in bulk MgB 2 . Low levels of carbon doping and light neutron irradiation result in significant enhancements in H c2 . At high fluences, where superconductivity is nearly fully suppressed, superconductivity can be restored through post exposure annealing. However, this results in a change in the interdependencies of the normal state and superconducting properties (ρ 0 , T c , H c2 ), with little or no enhancement in H c2

  17. ZnO nanorods/AZO photoanode for perovskite solar cells fabricated in ambient air

    Science.gov (United States)

    La Ferrara, Vera; De Maria, Antonella; Rametta, Gabriella; Della Noce, Marco; Vittoria Mercaldo, Lucia; Borriello, Carmela; Bruno, Annalisa; Delli Veneri, Paola

    2017-08-01

    ZnO nanorods are a good candidate for replacing standard photoanodes, such as TiO2, in perovskite solar cells and in principle superseding the high performances already obtained. This is possible because ZnO nanorods have a fast electron transport rate due to their large surface area. An array of ZnO nanorods is grown by chemical bath deposition starting from Al-doped ZnO (AZO) used both as a seed layer and as an efficient transparent anode in the visible spectral range. In particular, in this work we fabricate methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells using glass/AZO/ZnO nanorods/perovskite/Spiro-OMeTAD/Au as the architecture. The growth of ZnO nanorods has been optimized by varying the precursor concentrations, growth time and solution temperature. All the fabrication process and photovoltaic characterizations have been carried out in ambient air and the devices have not been encapsulated. Power conversion efficiency as high as 7.0% has been obtained with a good stability over 20 d. This is the highest reported value to the best of our knowledge and it is a promising result for the development of perovskite solar cells based on ZnO nanorods and AZO.

  18. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü., E-mail: uozgur@vcu.edu; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2015-05-04

    The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

  19. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    International Nuclear Information System (INIS)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-01-01

    The effect of δ-doping of In 0.06 Ga 0.94 N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In 0.15 Ga 0.85 N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm 2 in the reference LED to ∼120 A/cm 2 in the LEDs with Mg δ-doped barriers

  20. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Science.gov (United States)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-05-01

    The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

  1. Solar-blind wurtzite MgZnO alloy films stabilized by Be doping

    International Nuclear Information System (INIS)

    Su, Longxing; Zhu, Yuan; Zhang, Quanlin; Chen, Mingming; Ji, Xu; Wu, Tianzhun; Gui, Xuchun; Xiang, Rong; Tang, Zikang; Pan, Bicai

    2013-01-01

    Mg x Zn 1−x O alloy films were deposited on c-plane sapphire substrates by radio frequency plasma-assisted molecular beam epitaxy (rf-PMBE). The phase segregation occurred when x was larger than 33%. Be doping was found experimentally able to stabilize the high-Mg-content MgZnO alloy. By alloying 1–2% Be into MgZnO, the band gap of as-prepared quaternary alloys can be raised to the solar-blind range (4.5 eV). Calculated formation energy of the alloys based on first principle reveals that a small amount of Be incorporation can reduce the formation energy of high-Mg-content MgZnO alloys and results in a more stable system, which justifies our experimental observations. (paper)

  2. Controlled synthesis of ZnO branched nanorod arrays by hierarchical solution growth and application in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Fang Xiaoming; Peng Lihua; Shang Xiaoying; Zhang Zhengguo

    2011-01-01

    We demonstrate the controlled synthesis of ZnO branched nanorod arrays on fluorine-doped SnO 2 -coated glass substrates by the hierarchical solution growth method. In the secondary growth, the concentration of Zn(NO 3 ) 2 /hexamethylenetetramine plays an important role in controlling the morphology of the branched nanorod arrays, besides that of diaminopropane used as a structure-directing agent to induce the growth of branches. The population density and morphology of the branched nanorod arrays depend on those of the nanorod arrays obtained from the primary growth, which can be modulated though the concentration of Zn(NO 3 ) 2 /hexamethylenetetramine in the primary growth solution. The dye-sensitized ZnO branched nanorod arrays exhibit much stronger optical absorption as compared with its corresponding primary nanorod arrays, suggesting that the addition of the branches improves light harvesting. The dye-sensitized solar cell based on the optimized ZnO branched nanorod array reaches a conversion efficiency of 1.66% under the light radiation of 1000 W/m 2 . The branched nanorod arrays can also be applied in other application fields of ZnO.

  3. Phase segregation and dielectric, ferroelectric, and piezoelectric properties of MgO-doped NBT-BT lead-free ferroelecric ceramics

    Science.gov (United States)

    Liu, Gang; Wang, Ziyang; Zhang, Leiyang; Shi, Wenjing; Jing, Jiayi; Chen, Yi; Liu, Hongbo; Yan, Yan

    2018-03-01

    MgO doped NBT-BT ceramics were prepared by the conventional electroceramic processing. The effects of MgO on the phase, microstructures and electrical properties of NBT-BT ceramics were systematically investigated. When doping content is more than 1%, a second phase appeared, which has great effect on dielectric, ferroelectric, and piezoelectric properties, such as the T F-R peak weakened, moved to the higher temperature, and eventually disappeared. When the doping content is above 1.5%, the ceramic samples show a strong relaxation. The detailed analysis and discussion can be found within this study.

  4. Mg doped InN and confirmation of free holes in InN

    International Nuclear Information System (INIS)

    Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

    2011-01-01

    We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

  5. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar

    2016-06-16

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable of adsorbing dinitrogen (N2), however there is no dissociative adsorption of N2 on single transition metal dopant. When two TM atoms are doped on MgO(100) surface, dissociative adsorption of dinitrogen occurs in all the three cases. Whether the dissociation is spontaneous or is it associated with activation barrier depends on the orientation of N2 molecule approaching the dopant site.

  6. Degradation of selected industrial dyes using Mg-doped TiO2 polyscales under natural sun light as an alternative driving energy

    Science.gov (United States)

    Shivaraju, H. P.; Midhun, G.; Anil Kumar, K. M.; Pallavi, S.; Pallavi, N.; Behzad, Shahmoradi

    2017-11-01

    Designing photocatalytic materials with modified functionalities for the utilization of renewable energy sources as an alternative driving energy has attracted much attention in the area of sustainable wastewater treatment applications. Catalyst-assisted advanced oxidation process is an emerging treatment technology for organic pollutants and toxicants in industrial wastewater. Preparation of visible-light-responsive photocatalyst such as Mg-doped TiO2 polyscales was carried out under mild sol-gel technique. Mg-doped TiO2 polyscales were characterized by powder XRD, SEM, FTIR, and optical and photocatalytic activity techniques. The Mg-doped TiO2 showed a mixed phase of anatase and rutile with an excellent crystallinity, structural elucidations, polyscales morphology, consequent shifting of bandgap energy and adequate photocatalytic activities under visible range of light. Mg-doped TiO2 polyscales were investigated for their efficiencies in the degradation of most commonly used industrial dyes in the real-time textile wastewater. Mg-doped TiO2 polyscales showed excellent photocatalytic degradation efficiency in both model industrial dyes (65-95%) and textile wastewater (92%) under natural sunlight as an alternative and renewable driving energy.

  7. High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

    International Nuclear Information System (INIS)

    Liu, Wei; Zhang, Qiang; Yin, Kang; Chi, Hang; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

    2013-01-01

    The study of Mg 2 Si 1−x Sn x -based thermoelectric materials has received widespread attention due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. In this research, Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y solid solutions with the nominal Bi content of 0≤y≤0.03 are prepared using a two-step solid state reaction followed by spark plasma sintering consolidation. Within this range of Bi concentrations, no evidence of second phase segregation was found. Bi is confirmed to occupy the Si/Sn sites in the crystal lattice and behaves as an efficient n-type dopant in Mg 2 Si 0.4 Sn 0.6 . Similar to the effect of Sb, Bi doping greatly increases the electron density and the power factor, and reduces the lattice thermal conductivity of Mg 2.16 Si 0.4 Sn 0.6 solid solutions. Overall, the thermoelectric figure of merit of Bi-doped Mg 2.16 Si 0.4 Sn 0.6 solid solutions is improved by about 10% in comparison to values obtained with Sb-doped materials of comparable dopant content. This improvement comes chiefly from a marginally higher Seebeck coefficient of Bi-doped solid solutions. The highest ZT∼1.4 is achieved for the y=0.03 composition at 800 K. - Graphical abstract: (a)The relationship between electrical conductivity and power factor for Sb/Bi-doped Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y (Sb/Bi) y (0 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. (c)Temperature dependent dimensionless figure of merit ZT of Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. - Highlights: • Bi doped Mg 2.16 Si 0.4 Sn 0.6 showed 15% enhancement in the power factor as compared to Sb doped samples. • Bi doping reduced κ ph of Mg 2.16 Si 0.4 Sn 0.6 due to stronger point defect scattering. • The highest ZT=1.4 at 800 K was achieved for Mg 2.16 (Si 0.4 Sn 0.6 ) 0.97 Bi 0.03

  8. Influence of Mg{sup 2+} doping on the structure and electrochemical performances of layered LiNi{sub 0.6}Co{sub 0.2-x}Mn{sub 0.2}Mg{sub x}O{sub 2} cathode materials

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhenjun; Wang, Zhixing, E-mail: zxwang.csu@hotmail.com; Guo, Huajun; Li, Xinhai

    2016-06-25

    Introducing the Mg ion into host lattice is applied to improving the electrochemical performance of LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2}. The effect of Mg substitution for Co on the structure, morphology, electrochemical properties and Li{sup +} diffusion coefficients are investigated in details. Rietveld refinement results reveal that Mg is incorporated into the bulk lattice, which results in reduced cation mixing and expand c-lattice parameter. All Mg-doped sample exhibit better cycle and rate performances, although the Mg substitution for Co led to decreasing a part of capacity. The Li diffusion coefficients obtained by galvanostatic intermittent titration technique (GITT) are increased with increases of Mg content. - Highlights: • Mg-doped sample exhibits better electrochemical performance. • The change of crystal structure by Mg doping are studied. • The Mg doping improves the lithium ion diffusion coefficient.

  9. Structure and superconductivity of double-doped Mg1-x(Al0.5Li0.5)xB2

    DEFF Research Database (Denmark)

    Xu, G.J.; Grivel, Jean-Claude; Abrahamsen, A.B.

    2003-01-01

    A series of polycrystalline samples of Mg1-x(Al0.5Li0.5)(x)B-2 (0less than or equal toxless than or equal to0.6) were prepared by a solid state reaction method and their structure, superconducting transition temperature and magneto-transport properties were investigated by means of X-ray diffract......A series of polycrystalline samples of Mg1-x(Al0.5Li0.5)(x)B-2 (0less than or equal toxless than or equal to0.6) were prepared by a solid state reaction method and their structure, superconducting transition temperature and magneto-transport properties were investigated by means of X......-ray diffraction (XRD), ac-susceptibility and resistance in varied magnetic fields. The double doping leads to decreases in both the lattice parameters a and c. The superconducting transition temperature (T-c) decreases with double doping, but the T-c is systematically higher than that of the single Al......-doped samples. It is suggested that the hole band filling has little effect on T-c at high doping level, while the disorder induced by doping plays an important role in suppressing T-c. A systematic comparison with Al-doped MgB2 of the structure, superconducting transition and irreversibility field is made. (C...

  10. Effective transformation of PCDTBT nanorods into nanotubes by polymer melts wetting approach

    Directory of Open Access Journals (Sweden)

    Fakhra Aziz

    2017-09-01

    Full Text Available In the present study, p-type conducting polymer of poly [N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole] (PCDTBT has been explored for nanostructures. A novel approach has been adopted to transform nanorods into nanotubes by altering template-wetting methods. PCDTBT nanorods are fabricated by infiltrating porous alumina template with various solution concentrations of 5, 10 and 15 mg/ml. Upon thermal annealing PCDTBT beyond its melting point, the nanorods are transformed into nanotubes. The morphological and optical investigations reveal that the nanorods prepared with a concentration of 10 mg/ml are longer, denser, well-arranged and red shifted as compared to other nanorods. The PCDTBT nanotubes of the same concentration prepared at 300 °C are found the best among all other nanotubes with improved length, density and alignment as compared to their nanorod counterparts. Furthermore, the optical spectra of the nanotubes demonstrate broad spectral region, augmented absorption intensity and significant red-shift. The changes observed in Raman shift indicate improvement in molecular arrangement of the nanotubes. Optimization of the solution concentration and annealing temperature leads to improvement of PCDTBT nanostructures. PCDTBT nanotubes, with better molecular arrangement and broad optical spectrum, can be exploited in the state-of-the-art photovoltaic devices.

  11. ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

    Directory of Open Access Journals (Sweden)

    Ming-Hong Lai

    2010-01-01

    Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

  12. Ionic conductivity and fuel cell properties of apatite-type lanthanum silicates doped with Mg and containing excess oxide ions

    Energy Technology Data Exchange (ETDEWEB)

    Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira-cho, Suma-ku, Kobe 654-0037 (Japan); Nojiri, Yoshihiro [Kyushu University, Department of Mechanical Engineering Science, Faculty of Engineering, Motooka 744, Nishi-ku, Fukuoka 819-0935 (Japan); Tanase, Shigeo [National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2008-11-30

    Enhancement of the ionic conductivity of lanthanum silicate-based apatites is examined with emphasis on optimizing the La composition and the Mg doping level at the same time. La{sub 10}Si{sub 5.8}Mg{sub 0.2}O{sub 26.8} and La{sub 9.8}Si{sub 5.7}Mg{sub 0.3}O{sub 26.4} show the highest level of the ionic conductivities among apatite silicates, 8.8 and 7.4 x 10{sup -} {sup 2} S cm{sup -} {sup 1} at 800 C, respectively, with a very low level of activation energy (0.42-0.43 eV). Their conductivities are higher than yttria stabilized zirconia (YSZ) below 900 C and even comparable to Sr and Mg doped lanthanum gallate (LSGM) below 550 C. A solid oxide fuel cell using La{sub 9.8}Si{sub 5.7}Mg{sub 0.3}O{sub 26.4} as an electrolyte with Ni-ceria cermet anode and Sr doped lanthanum cobaltite cathode exhibits a remarkable improvement in power generation compared to previous data using Pt electrodes. Structural investigation by the Rietveld analysis on the powder X-ray diffraction pattern shows significant enlargement of the bottleneck triangle sizes of the conduction channel with the Mg doping. (author)

  13. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  14. Biocompatibility of Mg Ion Doped Hydroxyapatite Films on Ti-6Al-4V Surface by Electrochemical Deposition.

    Science.gov (United States)

    Lee, Kang; Choe, Han-Cheol

    2016-02-01

    In this study, we prepared magnesium (Mg) doped nano-phase hydroxyapatite (HAp) films on the TiO2 nano-network surface using electrochemical deposition method. Ti-6Al-4V ELI surface was anodized in 5 M NaOH solution at 0.3 A for 10 min. Nano-network TiO2 surface were formed by these anodization steps which acted as templates and anchorage for growth of the Mg doped HAp during subsequent pulsed electrochemical deposition process at 85 degrees C. The phase and morphologies of HAp deposits were influenced by the Mg ion concentration.

  15. Catalytic properties of pure and K+-doped Cu O/Mg O system towards 2-propanol conversion

    International Nuclear Information System (INIS)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N.; El-Shobaky, G. A.

    2013-01-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K + species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N 2 at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu 2 O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K + -doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K + -doping increased the catalytic activity and catalytic durability. (Author)

  16. Core–shell heterostructured metal oxide arrays enable superior light-harvesting and hysteresis-free mesoscopic perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-01-01

    To achieve highly efficient mesoscopic perovskite solar cells (PSCs), the structure and properties of an electron transport layer (ETL) or material (ETM) have been shown to be of supreme importance. Particularly, the core-shell heterostructured mesoscopic ETM architecture has been recognized as a successful electrode design, because of its large internal surface area, superior light-harvesting efficiency and its ability to achieve fast charge transport. Here we report the successful fabrication of a hysteresis-free, 15.3% efficient PSC using vertically aligned ZnO nanorod/TiO2 shell (ZNR/TS) core-shell heterostructured ETMs for the first time. We have also added a conjugated polyelectrolyte polymer into the growth solution to promote the growth of high aspect ratio (AR) ZNRs and substantially improve the infiltration of the perovskite light absorber into the ETM. The PSCs based on the as-synthesized core-shell ZnO/TiO2 heterostructured ETMs exhibited excellent performance enhancement credited to the superior light harvesting capability, larger surface area, prolonged charge-transport pathways and lower recombination rate. The unique ETM design together with minimal hysteresis introduces core-shell ZnO/TiO2 heterostructures as a promising mesoscopic electrode approach for the fabrication of efficient PSCs. This journal is © The Royal Society of Chemistry.

  17. Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

    Science.gov (United States)

    Rout, Dipak; Kumar, Govind; Vijaya, R.

    2018-01-01

    A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

  18. Efficient Visible-Light-Driven Z-Scheme Overall Water Splitting Using a MgTa2O(6-x)N(y)/TaON Heterostructure Photocatalyst for H2 Evolution.

    Science.gov (United States)

    Chen, Shanshan; Qi, Yu; Hisatomi, Takashi; Ding, Qian; Asai, Tomohiro; Li, Zheng; Ma, Su Su Khine; Zhang, Fuxiang; Domen, Kazunari; Li, Can

    2015-07-13

    An (oxy)nitride-based heterostructure for powdered Z-scheme overall water splitting is presented. Compared with the single MgTa2O(6-x)N(y) or TaON photocatalyst, a MgTa2O(6-x)N(y)/TaON heterostructure fabricated by a simple one-pot nitridation route was demonstrated to effectively suppress the recombination of carriers by efficient spatial charge separation and decreased defect density. By employing Pt-loaded MgTa2O(6-x)N(y)/TaON as a H2-evolving photocatalyst, a Z-scheme overall water splitting system with an apparent quantum efficiency (AQE) of 6.8% at 420 nm was constructed (PtO(x)-WO3 and IO3(-)/I(-) pairs were used as an O2-evolving photocatalyst and a redox mediator, respectively), the activity of which is circa 7 or 360 times of that using Pt-TaON or Pt-MgTa2O(6-x)N)y) as a H2-evolving photocatalyst, respectively. To the best of our knowledge, this is the highest AQE among the powdered Z-scheme overall water splitting systems ever reported. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. The effect of citric and oxalic acid doping on the superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N; Singla, Rashmi; Varma, G D; Malik, V K; Bernhard, C

    2009-01-01

    In this paper we report the effect of carbon doping on the structural and superconducting properties of MgB 2 using citric and oxalic acids as carbon sources. The bulk polycrystalline samples have been synthesized via a standard solid state reaction route with composition MgB 2 +x wt% of citric and oxalic acids (x = 0, 5 and 10). The x-ray diffraction results reveal the formation of dominantly MgB 2 with only a small amount of impurity phase MgO and substitution of C at the B site of MgB 2 for both dopants. Improvements in the upper critical field (H C2 ), irreversibility field (H irr ) and high field (>2.5 T) critical current density (J C ) have been observed on C doping in the samples. The correlations between superconducting properties and structural characteristics of the samples are described and discussed in this paper.

  20. Superior hydrogen storage kinetics of MgH2 nanoparticles doped with TiF3

    International Nuclear Information System (INIS)

    Xie, L.; Liu, Y.; Wang, Y.T.; Zheng, J.; Li, X.G.

    2007-01-01

    MgH 2 nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH 2 phase, without residual magnesium and with an average particle size of ∼300 nm. Milled with 5 wt.% TiF 3 as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of ∼0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under ∼20 bar hydrogen at room temperature. Compared with MgH 2 micrometer particles doped with 5 wt.% TiF 3 under the same conditions as the MgH 2 nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed

  1. Facile hydrothermal synthesis and characterization of cesium-doped PbI2 nanostructures for optoelectronic, radiation detection and photocatalytic applications

    Science.gov (United States)

    Shkir, Mohd; AlFaify, S.; Yahia, I. S.; Hamdy, Mohamed S.; Ganesh, V.; Algarni, H.

    2017-10-01

    Low-temperature hydrothermal-assisted synthesis of pure and cesium (Cs) (1, 3, 5, 7 and 10 wt%) doped lead iodide (PbI2) nanorods and nanosheets have been achieved successfully for the first time. The structural and vibrational studies confirm the formation of a 2H-polytypic PbI2 predominantly. Scanning electron microscope analysis confirms the formation of well-aligned nanorods of average size 100 nm at low concentration and nanosheets of average thicknesses in the range of 20-40 nm at higher concentrations of Cs doping. The presence of Cs doping was confirmed by energy dispersive X-ray study. Ultra-violet-visible absorbance spectra were recorded, and energy gap was calculated in the range of 3.33 to 3.45 eV for pure and Cs-doped PbI2 nanostructures which is higher than the bulk value (i.e., 2.27 eV) due to quantum confinement effect. Dielectric constant, loss, and AC conductivity studies have been done. Enhancement in Gamma linear absorption coefficient due to Cs doping confirms the suitability of prepared nanostructures for radiation detection applications. Furthermore, the photocatalytic performance of the synthesized nanostructures was evaluated in the decolorization of methyl green (MG) and methyl orange (MO) under the illumination of visible light (λ > 420 nm). The observed photocatalytic activity for 5 and 7 wt% Cs-doped PbI2 was observed to be more than pure PbI2 and also > 10 times higher than the commercially available photocatalysts. The results suggest that the prepared nanostructures are highly applicable in optoelectronic, radiation detection and many other applications. [Figure not available: see fulltext.

  2. On heavy carbon doping of MgB2

    International Nuclear Information System (INIS)

    Kasinathan, Deepa; Lee, K.-W.; Pickett, W.E.

    2005-01-01

    Heavy carbon doping of MgB 2 is studied by first principles electronic structure studies of two types, an ordered supercell (Mg(B 1-x C x ) 2 , x 0.0833) and also the coherent potential approximation method that incorporates effects of B-C disorder. For the ordered model, the twofold degenerate σ-bands that are the basis of the high temperature superconductivity are split by 60 meV (i.e. 7 meV/% C) and the σ Fermi cylinders contain 0.070 holes/cell, compared to 0.11 for MgB 2 . A virtual crystal treatment tends to overestimate the rate at which σ holes are filled by substitutional carbon. The coherent potential approximation (CPA) calculations give the same rate of band filling as the supercell method. The occupied local density of states of C is almost identical to that of B in the upper 2 eV of the valence bands, but in the range -8 eV to -2 eV, C has a considerably larger density of states. The calculations indicate that the σ Fermi surface cylinders pinch off at the zone center only above the maximum C concentration x ∼ 0.10. These results indicate that Mg(B 1-x C x ) 2 as well as Mg 1-x Al x B 2 is a good system in which to study the evolution of the unusual electron-phonon coupling character and strength as the crucial σ hole states are filled

  3. First-principles investigation of Fe-doped MgSiO{sub 3}-ilmenite

    Energy Technology Data Exchange (ETDEWEB)

    Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Rivera, Krupskaya [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Geologia y Minas, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Pinto, Henry P. [Interdisciplinary Center for Nanotoxicity, Department of Chemistry, Jackson State University, Jackson, Mississippi 39217-0510 (United States)

    2012-06-15

    First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO{sub 3} mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using {Delta}SCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO{sub 3}. Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe Rightwards-Double-Arrow Mg reaction can be described as substitutionally labile with Fe{sup 2+} complex being found in the high-spin state at low pressure MgSiO{sub 3}-ilmenite conditions.

  4. Favorable ultraviolet photoelectric effects in TbMnO3/Nb-SrTiO3 heterostructures

    KAUST Repository

    Jin, Kexin

    2014-12-01

    The rectifying properties and ultraviolet photoelectric effects in TbMnO3/Nb-doped SrTiO3 heterostructures have been investigated. The ideality factors and the diffusion voltages obtained from the current-voltage curves nonlinearly decrease with increasing the temperature. It is observed that the maximum photovoltaic values of the heterostructure irradiated by the 365 nm (2.6 mW/mm2) and 248 nm (0.71 mJ/mm2) lights are about 0.121 V and 0.119 V at T=300 K, respectively. The relations between the relaxation of photovoltages after the irradiation and the power intensity are revealed. These results suggest the potential applications in the development of ultraviolet detectors using oxides-based heterostructures.

  5. Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer

    KAUST Repository

    Flemban, Tahani H.; Singaravelu, Venkatesh; Devi, Assa Aravindh Sasikala; Roqan, Iman S.

    2015-01-01

    We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study

  6. Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-14

    Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

  7. Hydroxyapatite nanorods: soft-template synthesis, characterization and preliminary in vitro tests.

    Science.gov (United States)

    Nguyen, Nga Kim; Leoni, Matteo; Maniglio, Devid; Migliaresi, Claudio

    2013-07-01

    Synthetic hydroxyapatite nanorods are excellent candidates for bone tissue engineering applications. In this study, hydroxyapatite nanorods resembling bone minerals were produced by using soft-template method with cetyltrimethylammonium bromide. Composite hydroxyapatite/poly(D, L)lactic acid films were prepared to evaluate the prepared hydroxyapatite nanorods in terms of cell affinity. Preliminary in vitro experiments showed that aspect ratio and film surface roughness play a vital role in controlling adhesion and proliferation of human osteoblast cell line MG 63. The hydroxyapatite nanorods with aspect ratios in the range of 5.94-7 were found to possess distinctive properties, with the corresponding hydroxyapatite/poly(D, L)lactic acid films promoting cellular confluence and a fast formation of collagen fibers as early as after 7 days of culture.

  8. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  9. Periodic DFT study of acidic trace atmospheric gas molecule adsorption on Ca- and Fe-doped MgO(001) surface basic sites.

    Science.gov (United States)

    Baltrusaitis, Jonas; Hatch, Courtney; Orlando, Roberto

    2012-08-02

    The electronic properties of undoped and Ca- or Fe-doped MgO(001) surfaces, as well as their propensity toward atmospheric acidic gas (CO2, SO2, and NO2) uptake was investigated with an emphasis on gas adsorption on the basic MgO oxygen surface sites, O(surf), using periodic density functional theory (DFT) calculations. Adsorption energy calculations show that MgO doping will provide stronger interactions of the adsorbate with the O(surf) sites than the undoped MgO for a given adsorbate molecule. Charge transfer from the iron atom in Fe-doped MgO(001) to NO2 was shown to increase the binding interaction between adsorbate by an order of magnitude, when compared to that of undoped and Ca-doped MgO(001) surfaces. Secondary binding interactions of adsorbate oxygen atoms were observed with surface magnesium sites at distances close to those of the Mg-O bond within the crystal. These interactions may serve as a preliminary step for adsorption and facilitate further adsorbate transformations into other binding configurations. Impacts on global atmospheric chemistry are discussed as these adsorption phenomena can affect atmospheric gas budgets via altered partitioning and retention on mineral aerosol surfaces.

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  12. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  13. Favorable ultraviolet photoelectric effects in TbMnO3/Nb-SrTiO3 heterostructures

    KAUST Repository

    Jin, Kexin; Zhai, Y. X.; Li, Hui; Tian, Y. F.; Luo, B. C.; Wu, Tao

    2014-01-01

    The rectifying properties and ultraviolet photoelectric effects in TbMnO3/Nb-doped SrTiO3 heterostructures have been investigated. The ideality factors and the diffusion voltages obtained from the current-voltage curves nonlinearly decrease

  14. Hierarchical Layered WS2 /Graphene-Modified CdS Nanorods for Efficient Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Xiang, Quanjun; Cheng, Feiyue; Lang, Di

    2016-05-10

    Graphene-based ternary composite photocatalysts with genuine heterostructure constituents have attracted extensive attention in photocatalytic hydrogen evolution. Here we report a new graphene-based ternary composite consisting of CdS nanorods grown on hierarchical layered WS2 /graphene hybrid (WG) as a high-performance photocatalyst for hydrogen evolution under visible light irradiation. The optimal content of layered WG as a co-catalyst in the ternary CdS/WS2 /graphene composites was found to be 4.2 wt %, giving a visible light photocatalytic H2 -production rate of 1842 μmol h(-1)  g(-1) with an apparent quantum efficiency of 21.2 % at 420 nm. This high photocatalytic H2 -production activity is due to the deposition of CdS nanorods on layered WS2 /graphene sheets, which can efficiently suppress charge recombination, improve interfacial charge transfer, and provide reduction active sites. The proposed mechanism for the enhanced photocatalytic activity of CdS nanorods modified with hierarchical layered WG was further confirmed by transient photocurrent response. This work shows that a noble-metal-free hierarchical layered WS2 /graphene nanosheets hybrid can be used as an effective co-catalyst for photocatalytic water splitting. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Preparation and up-conversion luminescence of SrAlF{sub 5}:Yb{sup 3+}/Er{sup 3+} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jun [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Department of Physics, Dalian Maritime University, Dalian, Liaoning 116026 (China); Hua, Ruinian, E-mail: rnhua@dlnu.edu.cn [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Zhang, Wei; Feng, Zhiqing; Tang, Dongxin; Na, Liyan [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Chen, Baojiu, E-mail: chenmbj@sohu.com [Department of Physics, Dalian Maritime University, Dalian, Liaoning 116026 (China)

    2014-03-05

    Graphical abstract: The SrAlF{sub 5} nanorods co-doped with various Yb{sup 3+}/Er{sup 3+} concentrations was synthetized via a microemulsion-hydrothermal process for the first time. It was found that the optimum doping concentration of Yb{sup 3+} and Er{sup 3+} in SrAlF{sub 5} matrix was about 4 mol%. Furthermore, the temperature effect of upconversion luminescence was investigated. It was also found that the post heat-treatment could greatly improve upconversion luminescence. Highlights: • SrAlF{sub 5}:Yb{sup 3+}/Er{sup 3+} nanorods were synthesized via a microemulsion-hydrothermal process. • Crystal structure and morphology were characterized by using XRD and FESEM. • The upconversion luminescence intensity depend on LD working current was studied. • The post heat-treatment could greatly improve upconversion luminescence. -- Abstract: Yb{sup 3+} and Er{sup 3+} co-doped SrAlF{sub 5} nanorods with average diameter of 35 nm and average length of 400 nm were synthesized via a microemulsion-hydrothermal process, and their crystal structure and morphology were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), respectively. The optimum doping concentration of Yb{sup 3+}/Er{sup 3+} in SrAlF{sub 5} matrix was about 4 mol%. The upconversion luminescence intensity dependence on the laser diode (LD) working current was studied and the possible upconversion mechanism was analyzed. Furthermore, the temperature effect of upconversion luminescence was investigated. It was also found that the post heat-treatment could greatly improve upconversion luminescence.

  16. A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3

    KAUST Repository

    Kumar, Anup Bera; Peng, Haiyang; Lourembam, James; Shen, Youde; Sun, Xiaowei; Wu, Tao

    2013-01-01

    heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of Zn

  17. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar; Vovusha, Hakkim; Sanyal, Biplab

    2016-01-01

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable

  18. Facile hydrothermal synthesis of mn doped ZnO nanopencils for development of amperometric glucose biosensors

    Science.gov (United States)

    Shukla, Mayoorika; Pramila; Agrawal, Jitesh; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

    2018-05-01

    Mn doped ZnO nanopencils were synthesized via low temperature hydrothermal process for fabrication of enzymatic electrochemical glucose biosensor. The KMnO4 was found to play a dual role in modifying morphology and inducing Mn doping. Interestingly, two different types of morphologies viz nanorods and nanopencils along with Mn doping in the later were obtained. Incorporation of Mn has shown a tremendous effect on the morphological variations, repression of defects and electrochemical charge transfer at electrode electrolyte interface. The possible reason behind obtained morphological changes has been proposed which in turn were responsible for the improvement in the different figure of merits of as fabricated enzymatic electrochemical biosensor. There has been a 17 fold enhancement in the sensitivity of the as fabricated glucose biosensor from ZnO nanorods to Mn doped ZnO nanopencils which can be attributed to morphological variation and Mn doping.

  19. The catalytic destruction of antibiotic tetracycline by sulfur-doped manganese oxide (S-MgO) nanoparticles.

    Science.gov (United States)

    Moussavi, Gholamreza; Mashayekh-Salehi, Ali; Yaghmaeian, Kamyar; Mohseni-Bandpei, Anoshiravan

    2018-03-15

    The present study evaluates the efficacy of S-doped MgO (S-MgO) as compared with the plain MgO as a catalyst for destructive removal of tetracycline (TTC) in aqueous solutions. The S-MgO had around 6% S in its structure. Doping MgO with S caused increase in surface oxygen vacancy defects. Adding S-MgO (12 g/L) to a TTC aqueous solution (50 mg/L) caused removal of around 99% TTC at the neutral pH (ca. 5.1) and a short reaction time of 10 min. In comparison, plain MgO could remove only around 15% of TTC under similar experimental conditions. Diffusing O 2 into the TTC solution under the reaction with S-MgO resulted in a considerable improvement of TTC removal as compared to diffusing N 2 . Complete removal of TTC and 86.4% removal of its TOC could be obtained using 2 g/L S-MgO nanoparticles. The removal of TTC increased with the increase in solution temperature. The presence of nitrate, sulfate and chloride did not considerably affect the removal of TTC using S-MgO while TTC removal significantly decreased at the presence of bicarbonate and phosphate. The S-MgO was a stable and reusable catalyst exhibiting much higher catalytic activity than plain MgO for the TTC destruction. Accordingly, S-MgO is an emerging and efficient catalyst for catalytic decomposition and mineralization of such pharmaceutical compounds as TTC under atmospheric temperature and pressure. Copyright © 2018 Elsevier Ltd. All rights reserved.

  20. Synthesis and lithium storage properties of Zn, Co and Mg doped SnO2 Nano materials

    CSIR Research Space (South Africa)

    Palaniyandy, Nithyadharseni

    2017-09-01

    Full Text Available In this paper, we show that magnesium and cobalt doped SnO2 (Mg-SnO2 and Co-SnO2) nanostructures have profound influence on the discharge capacity and coulombic efficiency of lithium ion batteries (LIBs) employing pure SnO2 and zinc doped SnO2 (Zn-Sn...

  1. Fabrication of TiO2 nanoparticles/nanorod composite arrays via a two-step method for efficient dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Jingyang Wang

    2014-12-01

    Full Text Available TiO2 nanoparticles/nanorod composite arrays were prepared on the F-doped tin oxide (FTO substrate through a two-step method of hydrothermal and d.c. magnetron sputtering. The microstructure and optical properties of the samples were characterized respectively by means of X-ray diffraction (XRD, field-emission scanning electron microscopy (FESEM and UV–vis spectrometer. The results showed that the TiO2 composite nanorod arrays possess the nature of high surface area for more dye molecule absorption and the strong light scattering effects. The dye sensitized solar cells (DSSCs based on TiO2 composite nanorod arrays exhibited a 80% improvement in the overall energy conversion efficiency compared with the pure TiO2 nanorod arrays photoanode.

  2. Relationship between vortex pinning properties and microstructure in Ba–Nb–O-doped YBa2Cu3Oy and ErBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Haruta, Masakazu; Saura, Keisuke; Fujita, Natsuto; Ogura, Yuta; Ichinose, Ataru; Maeda, Toshihiko; Horii, Shigeru

    2013-01-01

    Highlights: •Y123 and Er123 films with Ba–Nb–O nanorods were prepared by PLD. •Nanorod morphology depended on growth temperature (T s ). •Nanorod morphology was different between the Y123 and Er123 with the same T s . •Distribution of local J c depended on nanorod morphology. -- Abstract: In-field J c s were improved by introducing Ba–Nb–O (BNO)-nanorods in YBa 2 Cu 3 O y (Y123) and ErBa 2 Cu 3 O y (Er123) films. Retention of J c against the magnetic field for the BNO-doped Er123 film was superior to that for the BNO-doped Y123 film. Sharp distribution of local critical current density originating from vortex pinning by nanorods with uniform morphology was demonstrated in the Er123 film. On the other hand, fluctuating microstructures of nanorods formed in the Y123 film prepared by the same deposition conditions. Moreover, different growth temperature dependences of nanorod morphology between the Y123 and Er123 films were clarified

  3. Catalytic properties of pure and K{sup +}-doped Cu O/Mg O system towards 2-propanol conversion

    Energy Technology Data Exchange (ETDEWEB)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N. [Ain Shams University, Faculty of Education, Chemistry Department, Roxy, Heliopolis, Cairo 11757 (Egypt); El-Shobaky, G. A., E-mail: saharelmolla@yahoo.com [National Research Center, Dokki, Cairo (Egypt)

    2013-08-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K{sup +} species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N{sub 2} at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu{sub 2}O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K{sup +}-doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K{sup +}-doping increased the catalytic activity and catalytic durability. (Author)

  4. Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2008-07-01

    We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Ex-situ manufacturing of SiC-doped MgB2 used for superconducting wire in medical device applications

    Science.gov (United States)

    Herbirowo, Satrio; Imaduddin, Agung; Sofyan, Nofrijon; Yuwono, Akhmad Herman

    2017-02-01

    Magnesium diboride (MgB2) is a superconductor material with a relatively high critical temperature. Due to its relatively high critical temperature, this material is promising and has the potential to replace Nb3Sn for wire superconducting used in many medical devices. In this work, nanoparticle SiC-doped MgB2 superconducting material has been fabricated through an ex-situ method. The doping of nanoparticle SiC by 10 and 15 wt% was conducted to analyze its effect on specific resistivity of MgB2. The experiment was started by weighing a stoichiometric amount of MgB2 and nanoparticles SiC. Both materials were mixed and grounded for 30 minutes by using an agate mortar. The specimens were then pressed into a 6 mm diameter stainless steel tube, which was then reduced until 3 mm through a wire drawing method. X-ray diffraction analysis was conducted to confirm the phase, whereas the superconductivity of the specimens was analyzed by using resistivity measurement under cryogenic magnetic system. The results indicated that the commercial MgB2 showed a critical temperature of 37.5 K whereas the SiC doped MgB2 has critical temperature of 38.3 K.

  6. Effect of Mg$^{2+}$ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd$_{3}$Al$_{2}$Ga$_{3}$O$_{12}$ crystals

    CERN Document Server

    Lucchini, M.T.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  7. Stability of the Al/TiB2 interface and doping effects of Mg/Si

    Science.gov (United States)

    Deng, Chao; Xu, Ben; Wu, Ping; Li, Qiulin

    2017-12-01

    The Al/TiB2 interface is of significant importance in controlling the mechanical properties of Al-B4C composites and tuning the heterogeneous nucleation of Al/Si alloys in industry. Its stability and bonding conditions are critical for both purposes. In this paper, the interfacial energies were investigated by first-principles calculations, and the results support the reported grain refinement mechanisms in Al/Si alloys. Moreover, to improve the mechanical properties of the interface, Mg and Si were doped at the interface, and our simulations show that the two interfaces will both weaken after doping Mg/Si, thus the formation of TiB2 is inhibited. As a result, the processability of the Al-B4C composites may be improved. Our results provide a theoretical basis and guidance for practical applications.

  8. Core/shell-type nanorods of Tb{sup 3+}-doped LaPO{sub 4}, modified with amine groups, revealing reduced cytotoxicity

    Energy Technology Data Exchange (ETDEWEB)

    Runowski, Marcin [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland); Dąbrowska, Krystyna [Polish Academy of Sciences, Bacteriophage Laboratory, Institute of Immunology and Experimental Therapy (Poland); Grzyb, Tomasz [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland); Miernikiewicz, Paulina [Polish Academy of Sciences, Bacteriophage Laboratory, Institute of Immunology and Experimental Therapy (Poland); Lis, Stefan, E-mail: blis@amu.edu.pl [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland)

    2013-11-15

    A simple co-precipitation reaction between Ln{sup 3+} cations (Ln = lanthanide) and phosphate ions in the presence of polyethylene glycol (PEG), including post-treatment under hydrothermal conditions, leads to the formation of Tb{sup 3+}-doped LaPO{sub 4} crystalline nanorods. The nanoparticles obtained can be successfully coated with amorphous and porous silica, forming core/shell-type nanorods. Both products reveal intensive green luminescence under UV lamp irradiation. The surface of the core/shell-type product can also be modified with –NH{sub 2} groups via silylation procedure, using 3-aminopropyltriethoxysilane as a modifier. Powder X-ray diffraction, transmission electron microscopy, and scanning electron microscopy confirm the desired structure and needle-like shape of the products synthesized. Fourier transform infrared spectroscopy and specific surface area measurements by Brunauer–Emmett–Teller method reveal a successful surface modification with amine groups of the core/shell-type nanoparticles prepared. The nanomaterials synthesized exhibit green luminescence characteristic of Tb{sup 3+} ions, as solid powders and aqueous colloids, examined by spectrofluorometry. The in vitro cytotoxicity studies reveal different degree toxicity of the products. LaPO{sub 4}:Tb{sup 3+}@SiO{sub 2}@NH{sub 2} exhibits the smallest toxicity against B16F0 mouse melanoma cancer cells and human skin microvascular endothelial cell lines, in contrast to the most toxic LaPO{sub 4}:Tb{sup 3+}@SiO{sub 2}.Graphical Abstract.

  9. Radiative Properties of Carriers in Cdse-Cds Core-Shell Heterostructured Nanocrystals of Various Geometries

    Science.gov (United States)

    Zhou, S.; Dong, L.; Popov, S.; Friberg, A. T.

    2013-07-01

    We report a model on core-shell heterostructured nanocrystals with CdSe as the core and CdS as the shell. The model is based on one-band Schrödinger equation. Three different geometries, nanodot, nanorod, and nanobone, are implemented. The carrier localization regimes with these structures are simulated, compared, and analyzed. Based on the electron and hole wave functions, the carrier overlap integral that has a great impact on stimulated emission is further investigated numerically by a novel approach. Furthermore, the relation between the nanocrystal size and electron-hole recombination energy is also examined.

  10. Refractive Indices in Undoped and MgO-Doped Near-Stoichiometric LiTaO3 Crystals

    Science.gov (United States)

    Nakamura, Masaru; Higuchi, Shinji; Takekawa, Shunji; Terabe, Kazuya; Furukawa, Yasunori; Kitamura, Kenji

    2002-04-01

    Undoped and MgO (0.5 and 1.0-mol%)-doped near-stoichiometric LiTaO3 (SLT) crystals were grown from off-congruent Li-rich solutions (Li˜ 60 mol%) by the double-crucible Czochralski method using a continuous SLT ceramic grain charging system. Curie temperatures of the undoped and MgO (0.5 and 1.0-mol%)-doped SLT crystals are 688, 694 and 695°C, respectively. The ordinary and extraordinary refractive indices (no, ne) of these crystals were measured by the prism coupling technique in the wavelength range from 0.440 to 1.050 μm at room temperature, and the temperature-independent Sellmeier equations for each crystal were derived from the measured refractive index data. no of the SLT crystal was almost the same as that of a congruent-melt LiTaO3 (CLT) crystal, while ne of the SLT crystal was lower than that of the CLT crystal. ne was lower than no for the SLT crystal, similar to as in the case of the LiNbO3 crystal. The refractive indices of the SLT crystal, no and ne, were found to be almost independent of MgO concentration at the doping level of 0.5 and 1.0 mol%.

  11. Fabrication and characterization of nanostructured Mg-doped CdS/AAO nanoporous membrane for sensing applications

    Science.gov (United States)

    Shaban, Mohamed; Mustafa, Mona; Hamdy, Hany

    2016-04-01

    In this study, Mg-doped CdS nanostructure was deposited onto anodic aluminum oxide (AAO) membrane substrate using sol-gel spin coating method. The AAO membrane was prepared by a two-step anodization process combined with pore widening process. The morphology, chemical composition, and structure of the spin- coated CdS nanostructure have been studied. The morphology of the fabricated AAO membrane and the deposited Mg-doped CdS nanostructure was investigated using scanning electron microscopy (SEM). The SEM of AAO illustrates a typical hexagonal and smooth nanoporous alumina membrane with interpore distance of ~ 100 nm, the pore diameter of ~ 60 nm. SEM of Mgdoped CdS shows porous nanostructured film of CdS nanoparticles. This film well adherents and covers the AAO substrate. The energy dispersive X-ray (EDX) pattern exhibits the signals of Al, O from AAO membrane and Mg, Cd, and S from the deposited CdS. This indicates the high purity of the fabricated membrane and the deposited Mg-doped CdS nanostructure. Using X-ray diffraction (XRD) pattern, Scherrer equation was used to calculate the average crystallite size. Additionally, the texture coefficients and density of dislocations were calculated. The fabricated CdS/AAO was applied to detect glucose of different concentrations. The proposed method has some advantages such as simple technology, low cost of processing, and high throughput. All of these factors facilitate the use of the prepared films in sensing applications.

  12. Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

    Science.gov (United States)

    Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

    2015-01-01

    Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

  13. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Science.gov (United States)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  14. Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

    International Nuclear Information System (INIS)

    Diniz, R.P.

    1989-08-01

    Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author) [pt

  15. Cooperative doping effects of Ti and nano-SiC on transport critical current density and grain connectivity of in situ MgB{sub 2} tapes

    Energy Technology Data Exchange (ETDEWEB)

    Pan, X.F., E-mail: PAN.Xifeng@nims.go.jp [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan)] [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China); Matsumoto, A.; Kumakura, H. [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cheng, C.H.; Zhao, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China)] [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2011-11-15

    We studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} tape. Ti doping significantly weakens the current dependence of T{sub c} of MgB{sub 2} tapes at self-field, and does not change T{sub c} or slightly increases T{sub c}. Further Ti adding can enhance in-field J{sub c} performance of SiC doped MgB{sub 2} tapes by a factor of 50-100% at 4.2 K and 10 T. Ti addition improves the J{sub c} performance of undoped and SiC doped MgB{sub 2} by modifying their grains connection. By now, nano-SiC powder (20-30 nm) is still the most effective additive for improving upper critical field and critical current density of MgB{sub 2}-based superconducting materials. However, some decomposed carbon aggregates at grain boundaries and results in serious weak-links of MgB{sub 2} grains, and these weak-links limit the further improvement of critical current density, J{sub c} of MgB{sub 2}, especially at lower fields. Ti doping is reported to increase the compactness of MgB{sub 2}, and modify its intergranular coupling by forming ultrathin TiB{sub 2} layer at grain boundaries. In this work, we studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} and the possibility to improve transport J{sub c} of SiC doped MgB{sub 2} by introducing Ti additive. The results suggest the Ti addition can obviously improve J{sub c} of MgB{sub 2} at lower fields and also enhance the J{sub c} of SiC doped MgB{sub 2} by improving their grain connectivity which shows serious intergranular weak-links.

  16. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  17. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    International Nuclear Information System (INIS)

    Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

    2016-01-01

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  18. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    Energy Technology Data Exchange (ETDEWEB)

    Socol, M., E-mail: cela@infim.ro [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Preda, N.; Rasoga, O. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Breazu, C. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Stavarache, I. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Stanculescu, F. [University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania); Girtan, M. [Laboratoire de Photonique d’Angers, Université d’Angers, 2, Bd. Lavoisier, 49045 Angers (France); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania)

    2016-06-30

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  19. Calculation of DSSC parameters based on ZnO nanorod/TiO2 mesoporous photoanode

    Science.gov (United States)

    Safriani, L.; Nurrida, A.; Mulyana, C.; Susilawati, T.; Bahtiar, A.; Aprilia, A.

    2017-07-01

    Photoanode of dye sensitized solar cell (DSSC) plays an important role as electron transport media to accept photogenerated electron from excited state of dye. There are several physical properties that are required from photoanode of DSSC. It should be highly transparent, have large surface area, has a conduction band lower than LUMO of dye molecule, has high charge carrier mobility and finally has a good stability in redox electrolyte process. In this work, DSSC with structure FTO/ZnO nanorod/TiO2 mesoporous/Ru-dye/gel electrolyte/ Pt/FTO has been fabricated. In order to modified the structures of photoanode, ZnO nanorod was grown on aluminium doped ZnO seed layer by variation concentration of Al (0 wt%, 0.5 wt% and 1.0 wt%). Zinc nitrate hexahydrate and hexamethylenetetramine used as raw materials for ZnO nanorod growth solution and deposited by self-assembly methods on FTO/Al doped ZnO seed layer. It is then followed by deposition of titania (TiO2) paste by screen printing methods. DSSC parameters i.e. ideally factor (n), series resistance (RS ), and shunt resistance (RSH ) was derived from current density-voltage (I-V) curve using the simplify equation of ideal diode model. The influences of ZnO photoanode structures to the solar cell performance will be completely discussed.

  20. Assessment of Anisotropic Semiconductor Nanorod and Nanoplatelet Heterostructures with Polarized Emission for Liquid Crystal Display Technology.

    Science.gov (United States)

    Cunningham, Patrick D; Souza, João B; Fedin, Igor; She, Chunxing; Lee, Byeongdu; Talapin, Dmitri V

    2016-06-28

    Semiconductor nanorods can emit linear-polarized light at efficiencies over 80%. Polarization of light in these systems, confirmed through single-rod spectroscopy, can be explained on the basis of the anisotropy of the transition dipole moment and dielectric confinement effects. Here we report emission polarization in macroscopic semiconductor-polymer composite films containing CdSe/CdS nanorods and colloidal CdSe nanoplatelets. Anisotropic nanocrystals dispersed in polymer films of poly butyl-co-isobutyl methacrylate (PBiBMA) can be stretched mechanically in order to obtain unidirectionally aligned arrays. A high degree of alignment, corresponding to an orientation factor of 0.87, was achieved and large areas demonstrated polarized emission, with the contrast ratio I∥/I⊥ = 5.6, making these films viable candidates for use in liquid crystal display (LCD) devices. To some surprise, we observed significant optical anisotropy and emission polarization for 2D CdSe nanoplatelets with the electronic structure of quantum wells. The aligned nanorod arrays serve as optical funnels, absorbing unpolarized light and re-emitting light from deep-green to red with quantum efficiencies over 90% and high degree of linear polarization. Our results conclusively demonstrate the benefits of anisotropic nanostructures for LCD backlighting. The polymer films with aligned CdSe/CdS dot-in-rod and rod-in-rod nanostructures show more than 2-fold enhancement of brightness compared to the emitter layers with randomly oriented nanostructures. This effect can be explained as the combination of linearly polarized luminescence and directional emission from individual nanostructures.

  1. Effect of growth time on the structure, morphology and optical properties of hydrothermally synthesized TiO2 nanorod thin films

    Science.gov (United States)

    Mohapatra, A. K.; Nayak, J.

    2018-05-01

    Titanium dioxide (TiO2) nanorod thin films were deposited on fluorine doped tin oxide coated glass substrates by a single step rapid hydrothermal process. The concentration of the precursor, the temperature of the reaction mixture were optimized in order to enhance the rate of deposition. Unlike the previously reported hydrothermal treatment for 24 - 48 h, the deposition of well aligned titanium dioxide nanorods was achieved in a short time such as 3 - 8 h. The crystal structure of the films were investigated by X-rays diffraction. The morphology of the nanorod films were studied with scanning electron microscopy. The optical properties were studied by photoluminescence spectroscopy.

  2. Modeling flux pinning in thin undoped and BazRo3-doped YBCO films

    DEFF Research Database (Denmark)

    Paturi, P.; Irjala, M.; Huhtinen, H.

    2009-01-01

    A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the Jc properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of Jc(B,T) curves of the films, when the pinning site distributions...... are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the Jc properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant...

  3. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

    Science.gov (United States)

    Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

    2012-03-01

    We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

  4. Tuning the Schottky Barrier at the Graphene/MoS2 Interface by Electron Doping

    DEFF Research Database (Denmark)

    Jin, Chengjun; Rasmussen, Filip Anselm; Thygesen, Kristian Sommer

    2015-01-01

    ) with a generalized gradient approximation predicts a Schottky barrier height of 0.18 eV, whereas the G0W0 method increases this value to 0.60 eV. While the DFT band gap of MoS2 does not change when the heterostructure is formed, the G0W0 gap is reduced by 0.30 eV as a result of the enhanced screening by the graphene...... layer. In contrast to the case of metal substrates, where the band alignment is governed by Pauli repulsion-induced interface dipoles, the graphene/MoS2 heterostructure shows only a negligible interface dipole. As a consequence, the band alignment at the neutral heterostructure is not changed when...... the two layers are brought into contact. We systematically follow the band alignment as a function of doping concentration and find that the Fermi level of the graphene crosses the MoS2 conduction band at a doping concentration of around 1012 cm–2. The variation of the energy levels with doping...

  5. First-principles study of hydrogen dissociation and diffusion on transition metal-doped Mg(0 0 0 1) surfaces

    International Nuclear Information System (INIS)

    Wang, Zhiwen; Guo, Xinjun; Wu, Mingyi; Sun, Qiang; Jia, Yu

    2014-01-01

    First-principles calculations within the density functional theory (DFT) have been carried out to study hydrogen molecules dissociation and diffusion on clean and transition metals (TMs) doped Mg(0 0 0 1) surfaces following Pozzo et al. work. Firstly, the stability of Mg(0 0 0 1) surface doped with transition metals atom has been studied. The results showed that transition metals on the left of the table tend to substitute Mg in the second layer, while the other transition metals prefer to substitute Mg in the first layer. Secondly, we studied hydrogen molecules dissociation and diffusion on clean and Mg(0 0 0 1) surfaces which the transition metal atoms substituted both in the first layer and second layer. When transition metal atoms substitute in the first layer, the results agree with the Pozzo et al. result; when transition metal atoms substitute in the second layer, the results showed that the transition metals on the left of the periodic table impact on the dissociation barriers is less. However, for the transition metals (Mn, Fe, Co, Ni) on the right, there is a great impact on the barriers. The transition metals doped surfaces bind the dissociated H atoms loosely, making them easily diffused. The results further reveal that the Fe dopant on the Mg surface is the best choice for H 2 dissociation and hydrogen storage.

  6. Aptamer biosensor for Salmonella typhimurium detection based on luminescence energy transfer from Mn2 +-doped NaYF4:Yb, Tm upconverting nanoparticles to gold nanorods

    Science.gov (United States)

    Cheng, Keyi; Zhang, Jianguo; Zhang, Liping; Wang, Lun; Chen, Hongqi

    2017-01-01

    A highly sensitive luminescent bioassay for the detection of Salmonella typhimurium was fabricated using Mn2 +-doped NaYF4:Yb,Tm upconversion nanoparticles (UCNPs) as the donor and gold nanorods (Au NRs) as the acceptor and utilizing an energy transfer (LET) system. Mn2 +-doped NaYF4:Yb,Tm UCNPs with a strong emission peak at 807 nm were obtained by changing the doped ion ratio. Carboxyl-terminated Mn2 +-doped NaYF4:Yb,Tm UCNPs were coupled with S. typhimurium aptamers, which were employed to capture and concentrate S. typhimurium. The electrostatic interactions shorten the distance between the negatively charged donor and the positively charged acceptor, which results in luminescence quenching. The added S. typhimurium leads to the restoration of luminescence due to the formation of UCNPs-aptamers-S. typhimurium, which repels the UCNPs-aptamers from the Au NRs. The LET system does not occur because of the nonexistence of the luminescence emission band of Mn2 +-doped NaYF4:Yb,Tm UCNPs, which had large spectral overlap with the absorption band of Au NRs. Under optimal conditions, the linear range of detecting S. typhimurium was 12 to 5 × 105 cfu/mL (R = 0.99). The limit of detection for S. typhimurium was as low as 11 cfu/mL in an aqueous buffer. The measurement of S. typhimurium in milk samples was satisfied in accordance with the plate-counting method, suggesting that the proposed method was of practical value in the application of food security.

  7. Effect of Mg"2"+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd_3Al_2Ga_3O_1_2 crystals

    International Nuclear Information System (INIS)

    Lucchini, M.T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd_3Al_2Ga_3O_1_2 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd_3Al_2Ga_3O_1_2 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd_3Al_2Ga_3O_1_2 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  8. Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Guan-Hung Shen [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10{sup −4} A at − 20 V bias, a forward current of 7.2 × 10{sup −3} A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated.

  9. Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

    International Nuclear Information System (INIS)

    Guan-Hung Shen; Hong, Franklin Chau-Nan

    2014-01-01

    A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10 −4 A at − 20 V bias, a forward current of 7.2 × 10 −3 A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated

  10. Synthesis of pure and Sr-doped LaGaO3, LaFeO3 and LaCoO3 and Sr,Mg-doped LaGaO3 for ITSOFC application using different wet chemical routes

    International Nuclear Information System (INIS)

    Kumar, M.; Srikanth, S.; Ravikumar, B.; Alex, T.C.; Das, S.K.

    2009-01-01

    Pure and Sr-doped LaGaO 3 , LaFeO 3 and LaCoO 3 and Sr,Mg-doped LaGaO 3 were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere

  11. de Haas-van Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB2

    International Nuclear Information System (INIS)

    Carrington, A.; Yelland, E.A.; Fletcher, J.D.; Cooper, J.R.

    2007-01-01

    Our understanding of the superconducting properties of MgB 2 is strongly linked to our knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB 2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron-phonon coupling on each Fermi surface sheet. For the Al doped samples, we are able to measure how the band structure changes with doping. These results are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state

  12. Facile synthesis of aluminium doped zinc oxide-polyaniline hybrids for photoluminescence and enhanced visible-light assisted photo-degradation of organic contaminants

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Mousumi [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Ghosh, Amrita; Mondal, Anup [Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata 700032, West Bengal (India); Ganguly, Saibal [Department of Chemical Engineering, BITS Pilani, K K Birla Goa Campus, NH 17 B Bypass Road, Zuarinagar, Sancoale, Goa 403726 (India); Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India)

    2017-04-30

    Graphical abstract: The present work focuses on the synergistic effect of a novel hybrid hetero structure (n-type aluminum doped zinc oxide and p-type polyaniline), combining both sol-gel and in-situ oxidative polymerization method and studying its photoluminescence (PL), photocatalytic, electrochemical impedance spectroscopy (EIS), linear scan voltammetry (LSV) and photocurrent properties. - Highlights: • Aluminium doped zinc oxide-polyaniline (PAZ) hybrids were prepared by polymerization of aniline using aluminium doped zinc oxide nanorod templates. • The hybrids were used as visible light photocatalysts for methyl orange (MO) and rose bengal (RB) dye degradation. • First order rate constants of the photocatalytic process were evaluated as 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes respectively. • Photoluminescence and electrochemical properties were in accord with the photocatalytic performance of the hybrid. - Abstract: The emergence of organic-inorganic photoactive materials has led to marked progress in the field of heterogeneous visible-light photocatalysis. Visible-light active aluminium doped zinc oxide-polyaniline (PAZ) hybrid was prepared employing in-situ oxidative polymerization of polyaniline (PANI) in the presence of aluminium doped zinc oxide (AlZnO) nanorods, synthesized via sol-gel route. The compositions, structural and optical properties of the synthesized hybrids were characterized. Among various samples, the 22 wt% aluminium doped zinc oxide-polyaniline (PAZ 3) hybrid show the best photocatalytic action for the degradation of methyl orange (MO) and rose bengal (RB) dyes under visible-light illumination, even after repeated use. The performance of the photocatalytic process was determined by the first order rate constant, 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes, respectively. Scavenger test was used to determine the role of active

  13. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  14. Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

    International Nuclear Information System (INIS)

    Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

    2010-01-01

    The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

  15. Superconducting properties of Zn and Al double-doped Mg1-x(Zn0.5Al0.5)xB2

    DEFF Research Database (Denmark)

    Xu, G.J.; Grivel, Jean-Claude; Abrahamsen, A.B.

    2004-01-01

    (XRD), ac susceptibility, magnetization and resistivity. The double doping leads to decreases in both the lattice parameters a and c, and the T-c decreases with increasing dopant content. A systematical comparison with Al doped- and Li, Al double doped MgB2 of structure, superconducting transition......A series of polycrystalline samples of Mg1-x(Zn0.5Al0.5)(x)B-2 (0less than or equal toxless than or equal to0.8) were prepared by solid state reaction method and their structure, superconducting transition temperature (T-c) and transport properties were investigated by means of X-ray diffraction...

  16. Improved Dehydrogenation Properties of 2LiNH2-MgH2 by Doping with Li3AlH6

    Directory of Open Access Journals (Sweden)

    Shujun Qiu

    2017-01-01

    Full Text Available Doping with additives in a Li-Mg-N-H system has been regarded as one of the most effective methods of improving hydrogen storage properties. In this paper, we prepared Li3AlH6 and evaluated its effect on the dehydrogenation properties of 2LiNH2-MgH2. Our studies show that doping with Li3AlH6 could effectively lower the dehydrogenation temperatures and increase the hydrogen content of 2LiNH2-MgH2. For example, 2LiNH2-MgH2-0.1Li3AlH6 can desorb 6.43 wt % of hydrogen upon heating to 300 °C, with the onset dehydrogenation temperature at 78 °C. Isothermal dehydrogenation testing indicated that 2LiNH2-MgH2-0.1Li3AlH6 had superior dehydrogenation kinetics at low temperature. Moreover, the release of byproduct NH3 was successfully suppressed. Measurement of the thermal diffusivity suggests that the enhanced dehydrogenation properties may be ascribed to the fact that doping with Li3AlH6 could improve the heat transfer for solid–solid reaction.

  17. High-quality ZnO growth, doping, and polarization effect

    Science.gov (United States)

    Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

    2016-03-01

    The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

  18. Effect of thermal implying during ageing process of nanorods growth on the properties of zinc oxide nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com; Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Sin, M. D., E-mail: diyana0366@johor.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Undoped and Sn-doped Zinc oxide (ZnO) nanostructures have been fabricated using a simple sol-gel immersion method at 95°C of growth temperature. Thermal sourced by hot plate stirrer was supplied to the solution during ageing process of nanorods growth. The results showed significant decrement in the quality of layer produced after the immersion process where the conductivity and porosity of the samples reduced significantly due to the thermal appliance. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM) electrical properties has been characterized using current voltage (I-V) measurement.

  19. Charge transport through O-deficient Au-MgO-Au junctions

    KAUST Repository

    Fadlallah, M. M.; Eckern, Ulrich; Rungger, Ivan; Schuster, Cosima; Schwingenschlö gl, Udo

    2009-01-01

    Metal-oxide heterostructures have been attracting considerable attention in recent years due to various technological applications. We present results of electronic structure and transport calculations for the Au-MgO-Au (metal-insulator-metal) heterostructure based on density-functional theory and the nonequilibrium Green’s functions method. The dependence of the conductance of the heterostructure on the thickness of the MgO interlayer and the interface spacing is studied. In addition, we address the effects of O vacancies. We observe deviations from an exponentially suppressed conductance with growing interlayer thickness caused by Au-O chemical bonds. Electronic states tracing back to O vacancies can increase the conductance. Furthermore, this effect can be enhanced by enlarging the interface spacing as the vacancy induced Mg states are shifted toward the Fermi energy.

  20. Charge transport through O-deficient Au-MgO-Au junctions

    KAUST Repository

    Fadlallah, M. M.

    2009-12-29

    Metal-oxide heterostructures have been attracting considerable attention in recent years due to various technological applications. We present results of electronic structure and transport calculations for the Au-MgO-Au (metal-insulator-metal) heterostructure based on density-functional theory and the nonequilibrium Green’s functions method. The dependence of the conductance of the heterostructure on the thickness of the MgO interlayer and the interface spacing is studied. In addition, we address the effects of O vacancies. We observe deviations from an exponentially suppressed conductance with growing interlayer thickness caused by Au-O chemical bonds. Electronic states tracing back to O vacancies can increase the conductance. Furthermore, this effect can be enhanced by enlarging the interface spacing as the vacancy induced Mg states are shifted toward the Fermi energy.

  1. Observation of the i = 1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructures

    International Nuclear Information System (INIS)

    Lindelof, P.E.; Bruus, H.; Taboryski, R.; Soerensen, C.B.

    1989-01-01

    An inverted and a normal GaAs/AlGaAs interface grown back to back in a socalled selectively doped double heterostructure (SD DH) has been studied in magnetic fields up to 12 tesla and at temperatures down to 0.3 K. The longitudinal resistance goes to zero at minima of the Shubnikov-de Haas oscillations. The Hall resistivity is found to exhibit the quantum Hall effect. By etching the surface of the double heterostructure wafer we create an unbalance in the density of electrons in the two parallel two-dimensional electronic sheets. Although we in this way create only a modest change in the electron densities, we observe a significant change in the Shubnikov-de Haas oscillations, which can be interpreted as a beat between the oscillations of two electron layers with different densities. At the same time we observe a significant variation of the width of the quantum Hall steps. The most astonishing feature of our results is a clear quantum Hall plateou at 1/2 filling in each of the two parallel layers observed at temperatures below 1 K at a magnetic field above 10 T. Weak localization was also studied and such experiments are consistent with two parallel and independent two-dimensional electronic layers. (orig.)

  2. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  3. LaPO4:Eu fluorescent nanorods, synthesis, characterization and spectroscopic studies on interaction with human serum albumin

    Science.gov (United States)

    Guo, Xingjia; Yao, Jie; Liu, Xuehui; Wang, Hongyan; Zhang, Lizhi; Xu, Liping; Hao, Aijun

    2018-06-01

    Eu3+ doped LaPO4 fluorescent nanorods (LaPO4:Eu) was successfully fabricated by a hydrothermal process. The obtained LaPO4:Eu nanorods under the optimal conditions were characterized by means of transmission electron microscopy (TEM), X-ray diffraction (XRD) technique, Fourier transform infrared (FTIR), UV-vis absorption and fluorescence spectroscopy. The nanorods with a length of 50-100 nm and a diameter of about 10 nm, can emit strong red fluorescence upon excitation at 241 nm. The FTIR result confirmed that there are lots of phosphate groups on the surfaces of nanorods. In order to better understand the physiological behavior of nanorods in human body, multiple spectroscopic methods were used to study the interaction between the LaPO4:Eu nanorods and human serum albumin (HSA) in the simulated physiological conditions. The results indicated that the nanorods can effectively quench the intrinsic fluorescence of HSA through a dynamic quenching mode with the association constants of the order of 103 L mol-1. The values of the thermodynamic parameters suggested that the binding of the nanorods to HSA was a spontaneous process and van der Waals forces and hydrogen bonds played a predominant role. The displacement experiments verified that the binding site of nanorods on HSA was mainly located in the hydrophobic pocket of subdomain IIA (site I) of HSA. The binding distance between nanorods and HSA was calculated to be 4.2 nm according to the theory of Förster non-radiation energy transfer. The analysis of synchronous fluorescence, three-dimensional fluorescence (3D) and circular dichroism (CD) spectra indicated that there the addition of LaPO4:Eu nanorods did not caused significant alterations in conformation of HSA secondary structure and the polarity around the amino acid residues.

  4. Facile synthesis and an effective doping method for ZnO:In{sup 3+} nanorods with improved optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Giwoong; Kim, Byunggu; Leem, Jae-Young, E-mail: jyleem@inje.ac.kr

    2015-12-05

    The sol–gel spin-coating method is usually used for thin-film deposition rather than to grow one-dimensional nanostructures. In this study, a novel regrowth method for spin-coated ZnO:In{sup 3+} films is demonstrated, using vapor-confined face-to-face annealing (VC-FTFA) in which a mica sheet is inserted between the two films prior to FTFA. ZnO:In{sup 3+} nanorods are regrown when indium chloride is used as the solvent because ZnCl{sub 2} and InCl{sub 3} vapors are generated and confined between the films. The near-band-edge emission intensity of the ZnO:In{sup 3+} nanorods resulting from VC-FTFA at 700 °C is enhanced by a factor of 17 compared with that of ZnO:In{sup 3+} films annealed in open air at the same temperature. Our method offers a simple and low-cost route for the fabrication of ZnO nanorods. - Highlights: • A novel regrowth method for spin-coated ZnO:In{sup 3+} films is demonstrated. • There have been no previous reports of ZnO:In{sup 3+} nanorods grown by the spin-coating method. • ZnO:In{sup 3+} nanorods are regrown by vapor-confined face-to-face annealing. • The ZnO:In{sup 3+} nanorods evolve via a vapor-solid mechanism. • Regrowth method offers a low-coat fabrication route for optoelectronic devices.

  5. Mg-doped biphasic calcium phosphate by a solid state reaction route: Characterization and evaluation of cytotoxicity

    Energy Technology Data Exchange (ETDEWEB)

    Webler, Geovana D. [Instituto de Física, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil); Correia, Ana C.C.; Barreto, Emiliano [Laboratório de Biologia Celular, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil); Fonseca, Eduardo J.S., E-mail: eduardo@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil)

    2015-07-15

    Hydroxyapatite (HAP) and β-tricalcium phosphate (β-TCP) are widely used in tissue engineering because of their chemical similarity to the inorganic bone phase. In this work, we prepare biphasic calcium phosphate (BCP, a mixture of HAP and β-TCP) doped with different concentrations of magnesium to investigate the influence of magnesium on the BCP crystal structure. Magnesium is known to be an important element in the composition of bones and teeth. Recent research has shown that the doping of magnesium into BCP improves its bone metabolism and mechanical properties without affecting its biocompatibility. The samples were prepared by solid-state reaction from calcium carbonate, monobasic ammonium phosphate, and magnesium nitrate hexahydrate. Varying concentrations of magnesium were used and its modifications were examined by different characterization techniques. The phase composition and morphology of the ceramic powders were characterized by X-ray diffraction and scanning electron microscopy, respectively. The functional groups were analyzed using Fourier transform infrared spectroscopy and Raman spectroscopy. Cell viability experiments, using macrophage-like cell lines J774, showed that the synthesized Mg-doped BCP did not exhibit cytotoxicity regardless of the doses assayed or the different concentrations of magnesium used, suggesting it as a good material for potential biological applications. - Highlights: • Simple and fast method for the preparation of the Mg-BCP. • Study of the influence of the incorporation of Mg in the BCP. • Cell viability showed that the synthesized Mg-BCP did not exhibit cytotoxicity.

  6. Mg-doped biphasic calcium phosphate by a solid state reaction route: Characterization and evaluation of cytotoxicity

    International Nuclear Information System (INIS)

    Webler, Geovana D.; Correia, Ana C.C.; Barreto, Emiliano; Fonseca, Eduardo J.S.

    2015-01-01

    Hydroxyapatite (HAP) and β-tricalcium phosphate (β-TCP) are widely used in tissue engineering because of their chemical similarity to the inorganic bone phase. In this work, we prepare biphasic calcium phosphate (BCP, a mixture of HAP and β-TCP) doped with different concentrations of magnesium to investigate the influence of magnesium on the BCP crystal structure. Magnesium is known to be an important element in the composition of bones and teeth. Recent research has shown that the doping of magnesium into BCP improves its bone metabolism and mechanical properties without affecting its biocompatibility. The samples were prepared by solid-state reaction from calcium carbonate, monobasic ammonium phosphate, and magnesium nitrate hexahydrate. Varying concentrations of magnesium were used and its modifications were examined by different characterization techniques. The phase composition and morphology of the ceramic powders were characterized by X-ray diffraction and scanning electron microscopy, respectively. The functional groups were analyzed using Fourier transform infrared spectroscopy and Raman spectroscopy. Cell viability experiments, using macrophage-like cell lines J774, showed that the synthesized Mg-doped BCP did not exhibit cytotoxicity regardless of the doses assayed or the different concentrations of magnesium used, suggesting it as a good material for potential biological applications. - Highlights: • Simple and fast method for the preparation of the Mg-BCP. • Study of the influence of the incorporation of Mg in the BCP. • Cell viability showed that the synthesized Mg-BCP did not exhibit cytotoxicity

  7. Mn-doped CdS quantum dots sensitized hierarchical TiO2 flower-rod for solar cell application

    International Nuclear Information System (INIS)

    Yu, Libo; Li, Zhen; Liu, Yingbo; Cheng, Fa; Sun, Shuqing

    2014-01-01

    A double-layered TiO 2 film which three dimensional (3D) flowers grown on highly ordered self-assembled one dimensional (1D) TiO 2 nanorods was synthesized directly on transparent fluorine-doped tin oxide (FTO) conducting glass substrate by a facile hydrothermal method and was applied as photoanode in Mn-doped CdS quantum dots sensitized solar cells (QDSSCs). The 3D TiO 2 flowers with the increased surface areas can adsorb more QDs, which increased the absorption of light; meanwhile 1D TiO 2 nanorods beneath the flowers offered a direct electrical pathway for photogenerated electrons, accelerating the electron transfer rate. A typical type II band alignment which can effectively separate photogenerated excitons and reduce recombination of electrons and holes was constructed by Mn-doped CdS QDs and TiO 2 flower-rod. The incident photon-to-current conversion efficiency (IPCE) of the Mn-doped CdS/TiO 2 flower-rod solar cell reached to 40% with the polysulfide electrolyte filled in the solar cell. The power conversion efficiency (PCE) of 1.09% was obtained with the Mn-doped CdS/TiO 2 flower-rod solar cell under one sun illumination (AM 1.5G, 100 mW/cm 2 ), which is 105.7% higher than that of the CdS/TiO 2 nanorod solar cell (0.53%).

  8. Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films

    Science.gov (United States)

    Alema, Fikadu; Reich, Michael; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-08-01

    Composition, microstructure, and dielectric properties of undoped and Ba(Mg1/3Nb2/3)O3 (BMN) doped Ba0.45Sr0.55TiO3 (BST) thin films deposited via rf. magnetron sputtering on platinized alumina substrates have been investigated. The analysis of microstructure has shown that despite the sizable effect of doping on the residual stress, the latter is partially compensated by the thermal expansion coefficient mismatch, and its influence on the BST film crystal structure is insignificant. It was revealed that BMN doped film demonstrated an average (over 2000 devices) of 52.5% tunability at 640 kV/cm, which is ˜8% lower than the value for the undoped film. This drop is associated with the presence of Mg ions in BMN; however, the effect of Mg doping is partially compensated by that of Nb ions. The decrease in grain size upon doping may also contribute to the tunability drop. Doping with BMN allows achievement of a compensation concentration yielding no free carriers and resulting in significant leakage current reduction when compared with the undoped film. In addition, the presence of large amounts of empty shallow traps related to NbTi• allows localizing free carriers injected from the contacts thus extending the device control voltage substantially above 10 V.

  9. In vivo toxicity studies of europium hydroxide nanorods in mice

    International Nuclear Information System (INIS)

    Patra, Chitta Ranjan; Abdel Moneim, Soha S.; Wang, Enfeng; Dutta, Shamit; Patra, Sujata; Eshed, Michal; Mukherjee, Priyabrata; Gedanken, Aharon; Shah, Vijay H.; Mukhopadhyay, Debabrata

    2009-01-01

    Lanthanide nanoparticles and nanorods have been widely used for diagnostic and therapeutic applications in biomedical nanotechnology due to their fluorescence and pro-angiogenic properties to endothelial cells, respectively. Recently, we have demonstrated that europium (III) hydroxide [Eu III (OH) 3 ] nanorods, synthesized by the microwave technique and characterized by several physico-chemical techniques, can be used as pro-angiogenic agents which introduce future therapeutic treatment strategies for severe ischemic heart/limb disease, and peripheral ischemic disease. The toxicity of these inorganic nanorods to endothelial cells was supported by several in vitro assays. To determine the in vivo toxicity, these nanorods were administered to mice through intraperitoneal injection (IP) everyday over a period of seven days in a dose dependent (1.25 to 125 mg kg -1 day -1 ) and time dependent manner (8-60 days). Bio-distribution of europium elements in different organs was analyzed by inductively coupled plasma mass spectrometry (ICPMS). Short-term (S-T) and long-term (L-T) toxicity studies (mice euthanized on days 8 and 60 for S-T and L-T, respectively) show normal blood hematology and serum clinical chemistry with the exception of a slight elevation of liver enzymes. Histological examination of nanorod-treated vital organs (liver, kidney, spleen and lungs) showed no or only mild histological changes that indicate mild toxicity at the higher dose of nanorods.

  10. Superior hydrogen storage kinetics of MgH{sub 2} nanoparticles doped with TiF{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Xie, L. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Liu, Y. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Wang, Y.T. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Zheng, J. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li, X.G. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China) and College of Engineering, Peking University, Beijing 100871 (China)]. E-mail: xgli@pku.edu.cn

    2007-08-15

    MgH{sub 2} nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH{sub 2} phase, without residual magnesium and with an average particle size of {approx}300 nm. Milled with 5 wt.% TiF{sub 3} as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of {approx}0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under {approx}20 bar hydrogen at room temperature. Compared with MgH{sub 2} micrometer particles doped with 5 wt.% TiF{sub 3} under the same conditions as the MgH{sub 2} nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed.

  11. ZnO nanorods/ZnS.(1,6-hexanediamine)0.5 hybrid nanoplates hierarchical heteroarchitecture with improved electrochemical catalytic properties for hydrazine

    Science.gov (United States)

    Wu, Zhengcui; Wu, Yaqin; Pei, Tonghui; Wang, Huan; Geng, Baoyou

    2014-02-01

    Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the secondary ZnS.(HDA)0.5 nanoplates can be conveniently engineered by variation of the sulfur source and straightforward adjustment of reactant concentrations such as 1,6-hexanediamine and the sulfur source. The fabricated ZnO/ZnS.(HDA)0.5 heteronanostructures show improved electrochemical catalytic properties for hydrazine compared with the primary ZnO nanorods. Due to its simplicity and efficiency, this approach could be similarly used to fabricate varieties of hybrid heterostructures made of materials with an intrinsic large lattice mismatch.Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the

  12. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3}/Nb-doped SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang [Hubei Normal University, Institute for Advanced Materials, and School of Physics and Electronic Science, Huangshi (China); Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai [Wuhan University, School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan (China); Hu, Zhongqiang [Northeastern University, Department of Electrical and Computer Engineering, Boston, MA (United States); Liu, Jun-Ming [Nanjing University, Laboratory of Solid State Microstructures, Nanjing (China)

    2017-03-15

    Epitaxial Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3} (BEFO) thin films are deposited on Nb-doped SrTiO{sub 3} (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption. (orig.)

  13. Growth temperature dependence of flux pinning properties in ErBa2Cu3Oy thin films with nano-rods

    International Nuclear Information System (INIS)

    Haruta, M.; Sueyoshi, T.; Fujiyoshi, T.; Mukaida, M.; Kai, H.; Matsumoto, K.; Mele, P.; Maeda, T.; Horii, S.

    2011-01-01

    Nano-rods were introduced into ErBa 2 Cu 3 O y thin films to improve J c . Pinning properties depended on the growth temperature of the films. Morphology of nano-rods was affected by the growth temperature. The growth temperature is important to achieve high in-field J c 's. Irreversibility lines and distributions of local critical current density (J cl ) based on the percolation transition model were affected by the growth temperature (T s ) in 3.5 wt.%-BaNb 2 O 6 -doped ErBa 2 Cu 3 O y thin films. The vortex-Bose-glass-like state appeared by the introduction of nano-rods, and this vortex state was affected by T s . The shape and width of the J cl distribution strongly depended on T s . These results are probably caused by variations of the density and the growth direction for nano-rods reflecting T s . The growth temperature is an important factor to achieve higher critical current properties under magnetic fields for coated conductors of rare-earth-based cuprates with nano-rods.

  14. Perovskite structures in the formation of nano-rods in REBa2Cu3O7-δ films self-organization to perovskite structures

    International Nuclear Information System (INIS)

    Mukaida, Masashi; Kai, Hideki; Shingai, Yuki

    2009-01-01

    Cubic perovskite structure has been found to play an important role for the nano-rod formation in REBa 2 Cu 3 O 7-δ films. BaWO 4 , with a sheelite structure, and BaNb 2 O 6 , with a tungsten bronze structure, were doped into REBa 2 Cu 3 O 7-δ targets. Laser-deposited, these materials form nano-rods in REBa 2 Cu 3 O 7-δ films accompanied by Ln elements, resulting in the composition of a pseudo-cubic perovskite structure. This was confirmed by selected area electron diffraction patterns (SADP) and composition mapping using energy-dispersive X-ray spectroscopy scanning transmission electron microscope (EDS-STEM) analysis. BaWO 4 with a sheelite structure, and BaNb 2 O 6 with a tungsten bronze structure, doped into targets no longer retain their structures, but can form pseudo-cubic perovskite structures in laser-deposited REBa 2 Cu 3 O 7-δ films. The perovskite crystal structure is thought to be important for nano-rod formation in the laser deposited REBa 2 Cu 3 O 7-δ film. (author)

  15. Correlation of infrared spectra and phase transitions in annealed proton-exchanged MgO doped LiNbO3

    International Nuclear Information System (INIS)

    Sun, Jian; Xu, Chang-qing

    2015-01-01

    Infrared spectra of OH − groups in annealed proton-exchanged (APE) 5 mol. % MgO-doped LiNbO 3 (MgO:LiNbO 3 ) crystals were studied using the Fourier transform infrared spectroscopy technique. Samples were prepared by benzoic acid proton-exchange followed with thermal annealing in oxygen. Evolutions of absorption peaks in APE MgO:LiNbO 3 crystals were recorded and analyzed. Comparing with none-doped APE LiNbO 3 crystals, a different phase transition behavior was found during thermal annealing. A periodically poled MgO:LiNbO 3 slab waveguide was prepared using identical procedures, and the second harmonic generation (SHG) signals were measured. Comparing the obtained SHG results with the infrared spectra, relationships between the phase transitions and the recovery of second-order nonlinear coefficients during thermal annealing were investigated. Finally, a method for optimizing the performance of MgO:LiNbO 3 waveguides was proposed

  16. Demonstration of Improved Charge Transfer in Graphene/Au Nanorods Plasmonic Hybrids Stabilized by Benzyl Thiol Linkers

    Directory of Open Access Journals (Sweden)

    Giuseppe Valerio Bianco

    2016-01-01

    Full Text Available Hybrids based on graphene decorated with plasmonic gold (Au nanostructures are being investigated as possible materials combination to add to graphene functionalities of tunable plasmon resonance and enhanced absorption at selected wavelength in the visible-near-infrared region of the spectrum. Here, we report a solution drop-casting approach for fabricating stable hybrids based on chemical vapor deposition (CVD graphene and Au nanorods, which are able to activate effective charge transfer from graphene. We demonstrate that CVD graphene functionalization by benzyl thiol (BZT provides the linker to strong anchoring, via S-Au bonds, Au nanorods to graphene. Optical measurements by spectroscopic ellipsometry give evidence of the introduction of plasmon resonances at 1.85 and 2.25 eV in the Au nanorods/BZT/graphene hybrids, which enable surface enhanced Raman scattering (SERS detection. Furthermore, an effective electron transfer from graphene to Au nanorods, resulting in an enhancement of p-type doping of graphene with a consequent decrease of its sheet resistance, is probed by Raman spectroscopy and corroborated by electrical measurements.

  17. Gold nanorods-silicone hybrid material films and their optical limiting property

    Science.gov (United States)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  18. NO and NO{sub 2} adsorption on subsurface doped MgO (100) and BaO (100) surfaces. A density functional study

    Energy Technology Data Exchange (ETDEWEB)

    Añez, Rafael, E-mail: ranez@ivic.gob.ve [Laboratorio de Química Física y Catálisis Computacional, Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 21827, Caracas (Venezuela, Bolivarian Republic of); Sierraalta, Aníbal [Laboratorio de Química Física y Catálisis Computacional, Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 21827, Caracas (Venezuela, Bolivarian Republic of); Soto, Lenin J. Díaz [Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Física, 22451-900 Rio de Janeiro, RJ (Brazil); Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, CT Bloco A sala 412, Rio de Janeiro, RJ 21949-900 (Brazil)

    2017-05-15

    Highlights: • Subsurface doped BaO(100) and MgO(100) surfaces. • NO and NO{sub 2} adsorption on doped BaO(100) and MgO(100) surfaces. • Surface distortion produced by the doped improves the interaction with the surface. • NO and NO{sub 2} adsorption energies displayed good correlation with the transferred charge. - Abstract: A periodic DFT approach was used to study the energetic, electronic and structural changes produced by the V, Fe and Ni sub layer doped of the MgO (100) and BaO (100) surfaces and the effect of these changes over the adsorption of NO and NO{sub 2}. Results indicate that the higher capacity of donating charge of the transition metal atoms improves the ability of the surfaces to transfer charge to the molecules. The charge transferred goes to NO and NO{sub 2} antibonding orbitals which makes them more reactive hence the interaction becomes stronger. A good lineal correlation between the charge transferred and the calculated adsorption energy was found, that is, as the charge transferred increases the adsorption energy increases. The interaction between the NO or NO{sub 2} molecule on doped surfaces not only depends of the charge transferred, surface structural changes produced by the doping with transition metal atoms increase the adsorption energy specially on the BaO (100) surface where the surface structural changes were more noticeable. Calculated stretching frequency of a NO in a η{sup 1} –N configuration indicates that this is the most stable specie found for the adsorption of NO on terraces of the MgO (100) surface around 77 K and that the sub layer Ni doped BaO (100) surface could be a promising material for the decomposition of NO{sub 2}.

  19. Significant enhancement of thermoelectric properties and metallization of Al-doped Mg2Si under pressure

    International Nuclear Information System (INIS)

    Morozova, Natalia V.; Korobeinikov, Igor V.; Karkin, Alexander E.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.; Takarabe, Ken-ichi; Mori, Yoshihisa; Nakamura, Shigeyuki

    2014-01-01

    We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg 2 Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg 2 Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg 2 Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg 2 Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10 −3 W/(K 2 m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg 2 Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.

  20. Band gap tuning of ZnO nanoparticles via Mg doping by femtosecond laser ablation in liquid environment

    International Nuclear Information System (INIS)

    Chelnokov, E.; Rivoal, M.; Colignon, Y.; Gachet, D.; Bekere, L.; Thibaudau, F.; Giorgio, S.; Khodorkovsky, V.; Marine, W.

    2012-01-01

    Highlights: ► Femtosecond laser ablation synthesis of Mg doped ZnO nanoparticles. ► Electronic properties of ZnO are modified by Mg. ► Band gap and exciton energy shifts to the blue. ► The exciton energy shift is saturated at Mg content of about 20%. ► Phase separation at Mg content is at more than 25%. ► Mechanism of exciton pinning – recombination via new surface states. - Abstract: We use multiphoton IR femtosecond laser ablation to induce non-thermal non-equilibrium conditions of the nanoparticle growth in liquids. Modifications of the electronic properties of ZnO NP were achieved by Mg ion doping of targets prepared from mixtures of Zn and Mg acetylacetonates. The nanoparticle sizes were 3–20 nm depending on the ablation conditions. X-ray fluorescence indicates that stoichiometric ablation and incorporation of Mg in nanocrystalline ZnO occurs. HRTEM observations show that nanoparticles retain their wurtzite structure, while at high Mg concentrations we detect the MgO rich domains. Exciton emissions exhibit relatively narrow bands with progressive and controlled blue shifts up to 184 meV. The exciton energy correlates to band edge absorption indicating strong modification of the NP band gaps. Stabilisation of the exciton blue shift is observed at high Mg concentration. It is accompanied by the formation of structure defects and ZnO/MgO phase separation within the nanoparticles.

  1. Structural and magnetic properties of Mg doped YbMnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Sattibabu, Bhumireddi, E-mail: bsb.satti@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Bhatnagar, Anil K., E-mail: anilb42@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Hyderabad 500046 (India); Rayaprol, Sudhindra [UGC-DAE CSR, Mumbai Centre, R-5 Shed, BARC, Mumbai 400085 (India); Mohan, Dasari; Das, Dibakar; Sundararaman, Mahadevan [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Siruguri, Vasudeva [UGC-DAE CSR, Mumbai Centre, R-5 Shed, BARC, Mumbai 400085 (India)

    2014-09-01

    We have studied the effect of Mg doping on structure and magnetism of multiferroic YbMnO{sub 3}. Room temperature neutron diffraction studies were carried out on polycrystalline Yb{sub 1−x}Mg{sub x}MnO{sub 3} (x=0.00 and 0.05) samples to determine phase formation as well as cation distribution and structural properties such as bond length and bond angles. The structural analysis shows that with Mg substitution, there is a marginal change in a and c parameters of the hexagonal unit cell, c/a ratio remains constant for x=0 and 0.05 samples. Due to changes in bond angle and bond lengths on substituting Mg, there is a slight decrease in the distortion of MnO{sub 5} polyhedra. Magnetic measurements show that the Néel temperature (T{sub N}) increases marginally from 85 K for x=0.00 to 89 K for x=0.05 sample.

  2. Magnetic-plasmonic multilayered nanorods

    Science.gov (United States)

    Thumthan, Orathai

    Multilayered nanorods which consist of alternating magnetic layers separated by Au layers combine two distinctive properties, magnetic properties and surface plasmonic resonance (SPR) properties into one nano-entity. Their magnetic properties are tunable by changing the layer thickness, varying from single domain to superparamagnetic state. Superparamagnetic is a key requirement for magnetic nanoparticles for bioapplications. Superparamagnetic nanoparticles exhibit high magnetic moments at low applied magnetic field while retain no magnetic moments when magnetic field is removed preventing them from aggregation due to magnetic attraction. Au layers in the nanorods provide anchorage sites for functional group attachment. Also, Au nanodisks exhibit SPR properties. The SPR peak can be tuned from 540 nm to 820 nm by controlling the thickness of magnetic segments while keeping Au thickness constant. In this research, there are three types of multilayered nanorod have been fabricated: Au/NiFe nanorods, Au/Fe nanorods, and Au/Co nanorods. These magnetic nanorods were fabricated by templated electrodeposition into the channels in Anodic Aluminum Oxide (AAO) membrane. The setup for AAO fabrication was developed as a part of this research. Our fabricated AAO membrane has channels with a diameter ranging from 40nm to 80 nm and a thickness of 10um to 12um. Magnetic properties of nanorods such as saturation field, saturation moment, coercivity and remanence are able to manipulate through their shape anisotropy. The magnetization will be easier in long axis rather than short axis of particle. In addition, Au nanodisks in the nanorod structure are not only serving as anchorage sites for functional groups but also provide SPR properties. Under irradiation of light Au nanodisks strongly absorb light at SPR frequency which ranging from 540 nm to 820 nm by controlling the thickness of magnetic segments while keeping Au thickness constant. The SPR tunability of nanorods in near

  3. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    International Nuclear Information System (INIS)

    Marzik, James V.

    2012-01-01

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl 3 in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB 2 wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J c , in excess of 10 5 A cm -2 at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H c2 (0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T c in carbon-doped MgB 2 powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB 2 superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant chemistry and concentration, wire

  4. Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)₅/(GaN)₁ superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

    Science.gov (United States)

    Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

    2014-10-23

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

  5. Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

    Science.gov (United States)

    Zhong, Hong-Xia; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Huang, Pu; Ding, Yi-Min

    2014-10-01

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm-3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

  6. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sellaiyan, S.; Uedono, A. [University of Tsukuba, Division of Applied Physics, Tsukuba, Ibaraki (Japan); Sivaji, K.; Janet Priscilla, S. [University of Madras, Department of Nuclear Physics, Chennai (India); Sivasankari, J. [Anna University, Department of Physics, Chennai (India); Selvalakshmi, T. [National Institute of Technology, Nanomaterials Laboratory, Department of Physics, Tiruchirappalli (India)

    2016-10-15

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F{sub 2} {sup 2+} and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F{sub 2} {sup 2+} to F{sup +} and this F{sup +} is converted into F centers at 416 nm. (orig.)

  7. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    Science.gov (United States)

    Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

    2016-10-01

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 °C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 °C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 °C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F2 2+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F2 2+ to F+ and this F+ is converted into F centers at 416 nm.

  8. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

    2016-01-01

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F_2 "2"+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F_2 "2"+ to F"+ and this F"+ is converted into F centers at 416 nm. (orig.)

  9. Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Kyung Ho Kim

    2014-03-01

    Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

  10. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Echresh, Mohammad [Department of Physics, Sanati Hoveizeh University, Ahvaz (Iran, Islamic Republic of); Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-5818358183 Linköping (Sweden); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden)

    2016-10-15

    The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn{sub 0.94}Ag{sub 0.06}O heterojunction photodiode displays the highest photocurrent gain (~1.52×10{sup 4}), a photoresponsivity of ~4.48×10{sup 3} AW{sup −1} and a photosensitivity of ~13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively.

  11. Functionalization of atomic force microscope tips by dielectrophoretic assembly of Gd2O3:Eu3+ nanorods

    International Nuclear Information System (INIS)

    Macedo, Andreia G; Ananias, Duarte; Andre, Paulo S; Ferreira, Rute A sa; Carlos, Luis D; Kholkin, Andrei L; Rocha, J

    2008-01-01

    An atomic force microscopy (AFM) tip has been coated with photoluminescent Eu 3+ -doped Gd 2 O 3 nanorods using a dielectrophoresis technique, which preserves the red emission of the nanorods (quantum yield 0.47). The performance of the modified tips has been tested by using them for regular topography imaging in tapping and contact modes. Both a regular AFM standard grid and a patterned surface (of an organic-inorganic methacrylate Zr-based oxo-cluster and poly(oxyethylene)/siloxane hybrid) have been used. Similar depth values have been measured using a conventional silicon tip and the nanorod-modified tip. The tips before and after use exhibit similar SEM images and photoluminescence spectra and, thus, seem to be stable under working conditions. These tips should find applications in scanning near-field optical microscopy and other scanning techniques

  12. Synthesis of Fe2O3/TiO2 nanorod-nanotube arrays by filling TiO2 nanotubes with Fe

    International Nuclear Information System (INIS)

    Mohapatra, Susanta K; Banerjee, Subarna; Misra, Mano

    2008-01-01

    Synthesis of hematite (α-Fe 2 O 3 ) nanostructures on a titania (TiO 2 ) nanotubular template is carried out using a pulsed electrodeposition technique. The TiO 2 nanotubes are prepared by the sonoelectrochemical anodization method and are filled with iron (Fe) by pulsed electrodeposition. The Fe/TiO 2 composite is then annealed in an O 2 atmosphere to convert it to Fe 2 O 3 /TiO 2 nanorod-nanotube arrays. The length of the Fe 2 O 3 inside the TiO 2 nanotubes can be tuned from 50 to 550 nm by changing the deposition time. The composite material is characterized by scanning electron microscopy, transmission electron microscopy and diffuse reflectance ultraviolet-visible studies to confirm the formation of one-dimensional Fe 2 O 3 /TiO 2 nanorod-nanotube arrays. The present approach can be used for designing variable one-dimensional metal oxide heterostructures

  13. Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

    International Nuclear Information System (INIS)

    Kalita, Himani; Pal, Pallabi; Dhara, Santanu; Pathak, Amita

    2017-01-01

    Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

  14. Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

    Energy Technology Data Exchange (ETDEWEB)

    Kalita, Himani [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pal, Pallabi; Dhara, Santanu [School of Medical Science and Technology, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pathak, Amita, E-mail: ami@chem.iitkgp.ernet.in [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India)

    2017-02-01

    Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

  15. Magnetic properties of Mg{sub 12}O{sub 12} nanocage doped with transition metal atoms (Mn, Fe, Co and Ni): DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Javan, Masoud Bezi, E-mail: javan.masood@gmail.com

    2015-07-01

    Binding energy of the Mg{sub 12}O{sub 12} nanocage doped with transition metals (TM=Mn, Fe, Co and Ni) in endohedrally, exohedrally and substitutionally forms were studied using density functional theory with the generalized gradient approximation exchange-correlation functional along 6 different paths inside and outside of the Mg{sub 12}O{sub 12} nanocage. The most stable structures were determined with full geometry optimization near the minimum of the binding energy curves of all the examined paths inside and outside of the Mg{sub 12}O{sub 12} nanocage. The results reveal that for all stable structures, the Ni atom has a larger binding energy than the other TM atoms. It is also found that for all complexes additional peaks contributed by TM-3d, 4s and 4p states appear in the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) gap of the host MgO cluster. The mid-gap states are mainly due to the hybridization between TM-3d, 4s and 4p orbitals and the cage π orbitals. The magnetic moment of the endohedrally doped TM atoms in the Mg{sub 12}O{sub 12} are preserved to some extent due to the interaction between the TM and Mg{sub 12}O{sub 12} nanocage, in contrast to the completely quenched magnetic moment of the Fe and Ni atoms in the Mg{sub 11}(TM)O{sub 12} complexes. Furthermore, charge population analysis shows that charge transfer occurs from TM atom to the cage for endohedrally and substitutionally doping. - Highlights: • Binding energy of the Mg{sub 12}O{sub 12} nanocage doped with transition metals was studied. • The most stable structures were determined near the minimum of the binding energy. • The encapsulated Ni atom has a larger binding energy than the other TM atoms. • Magnetic moment of the endohedrally doped TM atoms in the Mg{sub 12}O{sub 12} are preserved.

  16. Synthesis, characterization and charge transport mechanism of CdZnO nanorods

    International Nuclear Information System (INIS)

    Mahmoud, Waleed E.; Al-Ghamdi, A.A.; El-Tantawy, F.; Al-Heniti, S.

    2009-01-01

    ZnO and Cd-doped ZnO nanostructures were prepared by new facile method at 80 deg. C. XRD measurement indicated that both samples had typical hexagonal wurtzite structures. Transmission electron microscopy (TEM) measurement shows that rod-like crystals have been formed. EDX measurement confirms the incorporation of the cadmium ion into the crystalline lattice of ZnO and indicated that cadmium ions uniformly distributed on the surface of the rods. The doping with cadmium ions has a great influence on the optical properties of the ZnO. The electrical measurements of Cd-doped ZnO nanorod were measured. The current-voltage (I-V) characteristic curve revealed that the charge transport above 4 V is mainly non-linear due to grain boundary contribution. The complex impedance spectroscopy was confirmed that the grain boundary effect controls the charge transport mechanism through CdZnO ceramic material.

  17. Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

    Science.gov (United States)

    Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

    2018-06-01

    Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

  18. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  19. Effect of annealing on luminescence of Eu{sup 3+}- and Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Medić, Mina; Antić, Željka; Đorđević, Vesna [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Ahrenkiel, Phillip S. [South Dakota School of Mines & Technology, Rapid City, SD (United States); Marinović-Cincović, Milena [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Dramićanin, Miroslav D., E-mail: dramican@vinca.rs [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia)

    2016-02-15

    This work explores the influence of annealing temperature on the structure and luminescence of 2 at% Eu{sup 3+} and 1 at% Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanopowders produced via Pechini-type polymerized complex route. Mg{sub 2}TiO{sub 4} samples were annealed at 7 different temperatures (400 °C, 450 °C, 500 °C, 550 °C, 600 °C, 650 °C and 700 °C) to determine the temperature range in which cubic inverse spinel structure is stable and to follow the changes of material luminescence properties. X-ray diffraction revealed that crystallization of both Eu{sup 3+} and Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanopowders starts at 400 °C, and that Sm{sup 3+} doped Mg{sub 2}TiO{sub 4} starts to decompose at 650 °C, while Eu{sup 3+} doped Mg{sub 2}TiO{sub 4} starts to decompose at 700 °C. Samples annealed at higher temperatures show higher crystallinity and larger crystallite size. Mg{sub 2}TiO{sub 4} powder annealed at 600 °C is composed of ~5 nm size nanoparticles agglomerated in micron-size and dense chunks. The emission spectra of nanoparticles are composed of emissions from defects in Mg{sub 2}TiO{sub 4} host and characteristic emissions of Eu{sup 3+} ({sup 5}D{sub 0}→{sup 7}F{sub J}) and Sm{sup 3+} ({sup 4}G{sub 5/2}→{sup 6}H{sub J}) ions. The stronger emission and longer emission decays are observed with samples annealed at high temperatures. In the case of the Eu{sup 3+} ions emission intensity increased one order of magnitude between samples annealed at 400 °C and 650 °C. - Highlights: • Mg{sub 2}TiO{sub 4} nanoparticles of 5–10 nm in size are prepared by polymerized complex route. • Emission spectra and decays of Eu{sup 3+} and Sm{sup 3+} doped Mg{sub 2}TiO{sub 4} nanoparticles are shown. • Eu{sup 3+}(Sm{sup 3+}) doped Mg{sub 2}TiO{sub 4} can be annealed at temperatures <700 °C (650 °C). • Emission intensity of nanoparticles increases with increase of annealing temperature.

  20. Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

    Science.gov (United States)

    Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

    2003-08-01

    We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.