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Sample records for nanoparticulate indium tin

  1. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    International Nuclear Information System (INIS)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2013-01-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO

  2. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    Energy Technology Data Exchange (ETDEWEB)

    Vunnam, Swathi, E-mail: swathi.vunnam@mines.sdsmt.edu [Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States); Ankireddy, Krishnamraju; Kellar, Jon; Cross, William [Department of Materials and Metallurgical Engineering, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States)

    2013-03-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO.

  3. Optimization of nanoparticulate indium tin oxide slurries for the manufacture of ultra-thin indium tin oxide coatings with the slot-die coating process

    International Nuclear Information System (INIS)

    Wegener, M.; Riess, K.; Roosen, A.

    2016-01-01

    This paper deals with the optimization of colloidal processing to achieve suitable nanoparticulate indium tin oxide (ITO) slurries for the production of sub-μm-thin ITO coatings with the slot die coating process. For application in printed electronics these ITO coatings, which are composite films consisting of nanoparticulate ITO and a polymeric binder, should offer high flexibility, transparency and electrical conductivity. To preserve their flexibility, the composite films are not subject to any heat treatment, instead they are used as deposited and dried. To achieve very good transparency and electrical conductivity at the same time, the slurries must exhibit excellent dispersivity to result in a dense particle packing during film formation and drying. To reduce materials costs, films with thicknesses of several 100 nm are of interest. Therefore, the slot-die technique was applied as a fast, pre-dosing technique to produce sub-μm-thin ITO/binder composite films. The resulting ITO/binder films were characterized with regard to their key properties such as total transmission and specific electrical resistance. With the colloidal optimization of ethanol- and water-based nanoparticulate ITO slurries using PVP and PVB as binders, it was possible to achieve films of 250 nm in thickness exhibiting high total transmission of ∝ 93 % and a low specific electrical resistance of ∝ 10 Ω.cm.

  4. Optimization of nanoparticulate indium tin oxide slurries for the manufacture of ultra-thin indium tin oxide coatings with the slot-die coating process

    Energy Technology Data Exchange (ETDEWEB)

    Wegener, M.; Riess, K.; Roosen, A. [Erlangen-Nuremberg Univ., Erlangen (Germany). Dept. of Materials Science, Glass and Ceramics

    2016-07-01

    This paper deals with the optimization of colloidal processing to achieve suitable nanoparticulate indium tin oxide (ITO) slurries for the production of sub-μm-thin ITO coatings with the slot die coating process. For application in printed electronics these ITO coatings, which are composite films consisting of nanoparticulate ITO and a polymeric binder, should offer high flexibility, transparency and electrical conductivity. To preserve their flexibility, the composite films are not subject to any heat treatment, instead they are used as deposited and dried. To achieve very good transparency and electrical conductivity at the same time, the slurries must exhibit excellent dispersivity to result in a dense particle packing during film formation and drying. To reduce materials costs, films with thicknesses of several 100 nm are of interest. Therefore, the slot-die technique was applied as a fast, pre-dosing technique to produce sub-μm-thin ITO/binder composite films. The resulting ITO/binder films were characterized with regard to their key properties such as total transmission and specific electrical resistance. With the colloidal optimization of ethanol- and water-based nanoparticulate ITO slurries using PVP and PVB as binders, it was possible to achieve films of 250 nm in thickness exhibiting high total transmission of ∝ 93 % and a low specific electrical resistance of ∝ 10 Ω.cm.

  5. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    International Nuclear Information System (INIS)

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W.; Opallo, Marcin

    2011-01-01

    Highlights: → We introduced ITO nanoparticulate films for enzyme immobilization. → The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. → The electrocatalytical current increase with the thickness of nanoparticulate film. → There is no difference in electrocatalytic current in the presence or absence of mediator. → The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 μA cm -2 seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm -3 McIlvaine buffer (pH 4.8).

  6. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W. [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland); Opallo, Marcin, E-mail: mopallo@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland)

    2011-10-01

    Highlights: > We introduced ITO nanoparticulate films for enzyme immobilization. > The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. > The electrocatalytical current increase with the thickness of nanoparticulate film. > There is no difference in electrocatalytic current in the presence or absence of mediator. > The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 {mu}A cm{sup -2} seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm{sup -3} McIlvaine buffer (pH 4.8).

  7. Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

    International Nuclear Information System (INIS)

    Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

    1990-01-01

    Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

  8. Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

    Directory of Open Access Journals (Sweden)

    Malinovskaya Tatyana

    2017-01-01

    Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

  9. Discovery of the calcium, indium, tin, and platinum isotopes

    International Nuclear Information System (INIS)

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-01-01

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

  10. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  11. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  12. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  13. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  14. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  15. Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

    International Nuclear Information System (INIS)

    Schoemaker, S.; Willert-Porada, M.

    2009-01-01

    Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

  16. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  17. Radiochemical studies of the separation of some chloro-complexes of tin, antimony, cadmium and indium

    International Nuclear Information System (INIS)

    Ramamoorthy, N.; Mani, R.S.

    1976-01-01

    Radioisotopes of tin, antimony, cadmium and indium such as tin-113, antimony-124, antimony-125, cadmium-109, cadmium-115, indium-113m and indium-111 find extensive applications as tracers in various fields. These isotopes are produced by irradiation of targets in a reactor or a cyclotron. It is usually observed that in addition to the nuclear reactions giving rise to the desired isotopes, side reactions also take place giving rise to radionuclidic contaminants. Thus, antimony-125, indium-114m and indium-114 will be present in the cyclotron produced indium-111. The authors have studied column chromatography over hydrous zirconia for the separation of antimony from tin and indium, and cadmium from indium. These studies have thrown light on the role and behaviour of antimony-125 present as an impurity in tin-113 during the preparation of tin-113-indium-113m generators and have indicated methods for the preparation of 115 Cd-sup(115m)In generators and for separation of 111 In from proton irradiated cadmium targets. (Authors)

  18. Indium tin oxide surface smoothing by gas cluster ion beam

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

  19. Genotoxicity of indium tin oxide by comet test

    Directory of Open Access Journals (Sweden)

    İbrahim Hakkı Ciğerci

    2015-06-01

    Full Text Available Indium tin oxide (ITO is used for liquid crystal display (LCDs, electrochromic displays, flat panel displays, field emission displays, touch or laptop computer screens, cell phones, energy conserving architectural windows, defogging aircraft and automobile windows, heat-reflecting coatings to increase light bulb efficiency, gas sensors, antistatic window coatings, wear resistant layers on glass, nanowires and nanorods because of its unique properties of high electrical conductivity, transparency and mechanical resistance.Genotoxic effects of ITO were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of ITO at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was a observed at all concentrations of ITO by Comet assay. These result indicate that ITO exhibit genotoxic activity in A. cepa root meristematic cells.

  20. Gas Sensing Properties of Indium Tin Oxide Nanofibers

    Directory of Open Access Journals (Sweden)

    Shiyou Xu

    2009-11-01

    Full Text Available Indium Tin Oxide (ITO nanofibers were fabricated by the electrospinning process. The morphology and crystal structure of ITO nanofibers were studied by SEM, XRD, and TEM respectively. The results showed that polycrystalline ITO nanofibers with an average diameter of 80 nm were obtained. Sensors based on these nanofibers were fabricated by collecting these nanofibers on the integrated sensor platforms. The ITO nanofiber-based sensors showed very fast and high sensor responses at both room and elevated temperatures for NO2. The ratios of resistance in NO2 over that in air were 5 at room temperature and 34 at the optimal working temperature, respectively. The ITO nanofiber-based sensor can be repeatedly used. The details for the fast, enhanced sensor responses and the optimal temperature were discussed.

  1. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    International Nuclear Information System (INIS)

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  2. Surface characterization of sol–gel derived indium tin oxide films on ...

    Indian Academy of Sciences (India)

    Unknown

    , India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

  3. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  4. Surface energy for electroluminescent polymers and indium-tin-oxide

    International Nuclear Information System (INIS)

    Zhong Zhiyou; Yin Sheng; Liu Chen; Zhong Youxin; Zhang Wuxing; Shi Dufang; Wang Chang'an

    2003-01-01

    The contact angles on the thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and indium-tin-oxide (ITO) were measured by the sessile-drop technique. The surface energies of the films were calculated using the Owens-Wendt (OW) and van Oss-Chaudhury-Good (vOCG) approaches. The overall total surface energies of MEH-PPV and the as-received ITO were 30.75 and 30.07 mJ/m 2 , respectively. Both approaches yielded almost the same surface energies. The surface energies were mainly contributed from the dispersion interactions or Lifshitz-van der Waals (LW) interactions for both MEH-PPV and ITO. The changes in the contact angles and surface energies of the ITO films, due to different solvent cleaning processes and oxygen plasma treatments, were analyzed. Experimental results revealed that the total surface energy of the ITO films increased after various cleaning processes. In comparison with different solvents used in this study, we found that methanol is an effective solvent for ITO cleaning, as a higher surface energy was observed. ITO films treated with oxygen plasma showed the highest surface energy. This work demonstrated that contact angle measurement is a useful method to diagnose the cleaning effect on ITO films

  5. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  6. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  7. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  8. Effect of fabrication conditions on the properties of indium tin oxide powders

    International Nuclear Information System (INIS)

    Xie Wei

    2008-01-01

    This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity in and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350°C and Sn doping content 6∼8wt% are determined. The application of ITO in the military camouflage field is proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

    Science.gov (United States)

    Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

    2010-08-01

    Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

  10. First-principles analysis of structural and opto-electronic properties of indium tin oxide

    Science.gov (United States)

    Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-05-01

    Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

  11. Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

    NARCIS (Netherlands)

    Li, Y.; Giesbers, M.; Zuilhof, H.

    2012-01-01

    This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

  12. Physical properties of pyrolytically sprayed tin-doped indium oxide coatings

    NARCIS (Netherlands)

    Haitjema, H.; Elich, J.J.P.

    1991-01-01

    The optical and electrical properties of tin-doped indium oxide coatings obviously depend on a number of production parameters. This dependence has been studied to obtain a more general insight into the relationships between the various coating properties. The coatings have been produced by spray

  13. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show

  14. First heats of cerium solution in liquid aluminium, gallium, indium, tin, lead and bismuth

    International Nuclear Information System (INIS)

    Yamshchikov, L.F.; Lebedev, V.A.; Nichkov, I.F.; Raspopin, S.P.; Shein, V.G.

    1983-01-01

    Cerium solution heats in liquid alluminium, gallium, indium, tin, lead and bismuth are determined in high temperature mixing calorimeter with an isothermal shell. The statistical analysis carried out proves that values of cerium solution heat in fusible metals obtained by the methods of electric motive forces and calorimety give a satisfactory agreement

  15. In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods

    Directory of Open Access Journals (Sweden)

    Yan Shen

    2017-11-01

    Full Text Available Indium tin oxide (ITO nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3 and tin oxide (SnO2 mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD and transmission electron microscopy (TEM. The surface morphology was analyzed by scanning electron microscopy (SEM. During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.

  16. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  17. Indium Tin Oxide-Free Polymer Solar Cells: Toward Commercial Reality

    DEFF Research Database (Denmark)

    Angmo, Dechan; Espinosa Martinez, Nieves; Krebs, Frederik C

    2014-01-01

    Polymer solar cell (PSC) is the latest of all photovoltaic technologies which currently lies at the brink of commercialization. The impetus for its rapid progress in the last decade has come from low-cost high throughput production possibility which in turn relies on the use of low-cost materials...... and vacuum-free manufacture. Indium tin oxide (ITO), the commonly used transparent conductor, imposes the majority of the cost of production of PSCs, limits flexibility, and is feared to create bottleneck in the dawning industry due to indium scarcity and the resulting large price fluctuations. As such...

  18. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  19. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH2+ ions implanted-indium tin oxide substrate

    International Nuclear Information System (INIS)

    Liu Chenyao; Jiao Jiao; Chen Qunxia; Xia Ji; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    A new type of gold nanoparticle attached to a NH 2 + ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH 2 /indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10 15 ions/cm 2 . The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH 2 + ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  20. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict

  1. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

    KAUST Repository

    Shen, Youde; Turner, Stuart G.; Yang, Ping; Van Tendeloo, Gustaaf; Lebedev, Oleg I.; Wu, Tao

    2014-01-01

    challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia

  2. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  3. Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

    Science.gov (United States)

    Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

    2017-07-01

    Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

  4. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  5. On the deposition parameters of indium oxide (IO) and tin oxide (TO) by reactive evaporation technique

    International Nuclear Information System (INIS)

    Hassan, F.; Abdullah, A.H.; Salam, R.

    1990-01-01

    Thin films of tin oxide (TO) and indium oxide (IO) are prepared by the reactive evaporation technique, where indium or tin sources are evaporated and made to react with oxygen gas injected close to the substrate. In both depositions a substrate temperature of 380 0 C and a chamber pressure of 2x10 -5 mbar are utilized, but however different oxygen flow rates has been maintained. For TO, the deposition rate is found to be constant up to about 55 minutes of deposition time with a deposition rate of about 0.10 A/s, but for longer deposition time the deposition rate increases rapidly up to about 0.30 A/s. The IO displays a higher deposition rate of about 0.80 A/s over a deposition time 30 minutes, beyond which the deposition rate increases gradually

  6. A sol-gel method to synthesize indium tin oxide nanoparticles

    Institute of Scientific and Technical Information of China (English)

    Xiuhua Li; Xiujuan xu; Xin Yin; Chunzhong Li; Jianrong Zhang

    2011-01-01

    Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method.Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid.A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution.ITO nanoparticles with an average crystallite size of 18.5 nm and surface area of 32.6 m2/g were obtained after the gel was heat-treated at 700 C.The ITO nanoparticles showed good sinterability,the starting sintering temperature decreased sharply to 900 C,and the 1400 C sintered pellet had a density of 98.1 % of theoretical density (TD).

  7. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

    2012-01-01

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

  8. An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

    NARCIS (Netherlands)

    Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

    2016-01-01

    Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

  9. Nuclear structure studies on indium and tin isotope chains by means of laser spectroscopy

    International Nuclear Information System (INIS)

    Eberz, J.

    1986-11-01

    In a collaboration with GSI in Darmstadt and ISOLDE in Geneva the hyperfine structure (HFS) and the isotope shift (IS) of the indium isotopes from 104 In - 127 In in their ground and isomeric states could be studied. Additionally the tin isotopes 109 Sn and 111 Sn could be measured. In tin the transition 5p 2 1 S 0 → 5p6s 3 P 1 with λ = 563 nm was studied. In indium the transition 5p 2 P 1/2 → 6s 2 S 1/2 with λ = 410 nm and 5p 2 P 3/2 → 6s 2 S 1/2 with λ = 451 nm could be measured. The magnetic dipole moments and electric quadrupole moments determined from the measurements of the HFS can be sufficiently explained in the framework of the single-particle model. From the moments the configurations and spins of the studied nuclear states can be stated. In 109 Sn the nuclear spin was determined to I = 5/2. The measurement of the IS in two lines in 108 In allowed regarding the coupling rules for nuclear moments the determination of the nuclear spin. The spin of the 40 m isomers of the 108m In can be stated to I = 2. The mean square nuclear charge radius exhibits a parabolic slope the quadratic part of which with a maximum in the shell center at N = 66 between the neutron numbers N = 50 and N = 82 can be understood as sum of contributions of a surface correlation, i.e. a quadrupole deformation as well as eventually present higher order terms or a change of the surface skin density. The deformation determinable by this description is both for tin and for indium essentially larger than the deformation from the B(E2) values of tin or from the intrinsic quadrupole moments in indium derived from the HFS. (orig./HSI) [de

  10. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  11. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  12. Sol–gel synthesis of nanostructured indium tin oxide with controlled morphology and porosity

    Energy Technology Data Exchange (ETDEWEB)

    Kőrösi, László, E-mail: ltkorosi@gmail.com [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Scarpellini, Alice [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova (Italy); Petrik, Péter [Institute for Technical Physics and Materials Science, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary); Papp, Szilvia [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Dékány, Imre [MTA-SZTE Supramolecular and Nanostructured Materials Research Group, University of Szeged, Dóm tér 8, H-6720 Szeged (Hungary)

    2014-11-30

    Graphical abstract: - Highlights: • Nanocrystalline ITO thin films and powders were prepared by a sol–gel method. • The nature of the compounds used for hydrolysis plays a key role in the morphology. • Hydrolysis of In{sup 3+}/Sn{sup 4+} with EA led to a rod-like morphology. • Monodisperse spherical ITO nanoparticles were obtained on the use of AC. • ITO{sub E}A was highly porous, while ITO{sub A}C contained densely packed nanocrystals. - Abstract: Nanostructured indium tin oxide (ITO) powders and thin films differing in morphology and porosity were prepared by a sol–gel method. In{sup 3+} and Sn{sup 4+} were hydrolyzed in aqueous medium through the use of ethanolamine (EA) or sodium acetate (AC). X-ray diffraction measurements demonstrated that both EA and AC furnished indium tin hydroxide, which became nanocrystalline after aging for one day. The indium tin hydroxide samples calcined at 550 °C afforded ITO with a cubic crystal structure, but the morphology differed significantly, depending on the agent used for hydrolysis. Electron microscopy revealed the formation of round monodisperse nanoparticles when AC was used, whereas the application of EA led to rod-like ITO nanoparticles. Both types of nanoparticles were suitable for the preparation of transparent and conductive ITO thin films. The influence of the morphology and porosity on the optical properties is discussed.

  13. Concentration dependence of surface properties and molar volume of multicomponent system indium-tin-lead-bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Dadashev, R; Kutuev, R [Complex Science Research Institute of the Science Academy of the Chechen Republic, 21 Staropromisl. shosse, Grozny 364096 (Russian Federation); Elimkhanov, D [Science Academy of the Chechen Republic (Russian Federation)], E-mail: edzhabrail@mail.ru

    2008-02-15

    The results of an experimental research of surface properties of the four-component system indium-tin-lead-bismuth are presented. The researches under discussion were carried out in a combined device in which the surface tension ({sigma}) is measured by the method of maximum pressure in a drop, and density ({rho}) is measured by advanced aerometry. Measurement errors are 0.7 % for surface tension measurement, and 0.2 % for density measurement. The study of the concentration dependence of {sigma} in this system has revealed the influence of the third and fourth components upon the characteristics of surface tension isotherms of the binary system indium-tin. It was found out that with an increase in the content of the third and fourth components the depth of the minimum on the surface tension isotherms of the indium-tin system {sigma} decreases. On the basis of the concentration dependence of the phenomenon of concentration bufferity is revealed. It is shown that despite the complex character, isotherms of {sigma} on beam sections of a multicomponent system do not contain qualitatively new features in comparison with the isotherms of these properties in lateral binary systems.

  14. Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

    2013-05-15

    Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

  15. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  16. Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

    Science.gov (United States)

    Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

    2014-08-01

    Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

  17. Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study

    Science.gov (United States)

    Nath Tripathi, Madhvendra; Saeed Bahramy, Mohammad; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-10-01

    The manganese doped indium tin oxide (ITO) has integrated magnetics, electronics, and optical properties for next generation multifunctional devices. Our first-principles density functional theory (DFT) calculations show that the manganese atom replaces b-site indium atom, located at the second coordination shell of the interstitial oxygen in ITO. It is also found that both anti-ferromagnetic and ferromagnetic behaviors are realizable. The calculated magnetic moment of 3.95μB/Mn as well as the high transmittance of ˜80% for a 150 nm thin film of Mn doped ITO is in good agreement with the experimental data. The inclusion of on-site Coulomb repulsion corrections via DFT + U methods turns out to improve the optical behavior of the system. The optical behaviors of this system reveal its suitability for the magneto-opto-electronic applications.

  18. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2018-06-01

    The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

  19. Electrical and optical properties of indium tin oxide/epoxy composite film

    International Nuclear Information System (INIS)

    Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

    2014-01-01

    The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

  20. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  1. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  2. Transparent heaters based on solution-processed indium tin oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Im, Kiju [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Cho, Kyoungah [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Kim, Jonghyun [Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Kim, Sangsig, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)

    2010-05-03

    We demonstrate transparent heaters constructed on glass substrates using solution-processed indium tin oxide (ITO) nanoparticles (NPs) and their heating capability. The heat-generating characteristics of the heaters depended significantly on the sintering temperature at which the ITO NPs deposited on a glass substrate by spin-coating were transformed thermally into a solid film. The steady-state temperature of the ITO NP film sintered at 400 {sup o}C was 163 {sup o}C at a bias voltage of 20 V, and the defrosting capability of the film was confirmed by using dry-ice.

  3. Preparation and characterization of indium tin oxide thin films for their application as gas sensors

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    The structural and electrical properties of indium tin oxide (In 2 O 3 /SnO 2 ) thin films grown using direct evaporation technique on various substrates at different temperatures were studied. The effect of annealing, of films with different weight percent concentration of SnO 2 in In 2 O 3 and of different thickness on the structural and electrical properties were studied and optimized for use as gas sensor. The stability of the films against time and temperature variations was studied. The effect of the catalytic layers on the sensor microstructure and its performance towards the gas sensing application was observed

  4. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  5. Gold island films on indium tin oxide for localized surface plasmon sensing

    International Nuclear Information System (INIS)

    Szunerits, Sabine; Praig, Vera G; Manesse, Mael; Boukherroub, Rabah

    2008-01-01

    Mechanically, chemically and optically stable gold island films were prepared on indium tin oxide (ITO) substrates by direct thermal evaporation of thin gold films (2-6 nm) without the need for pre- or post-coating. The effect of mild thermal annealing (150 deg. C, 12 h) or short high temperature annealing (500 deg. C, 1 min) on the morphology of the gold nanostructures was investigated. ITO covered with 2 nm gold nanoislands and annealed at 500 deg. C for 1 min was investigated for its ability to detect the adsorption of biotinylated bovine serum albumin using local surface plasmon resonance (LSPR), and its subsequent molecular recognition of avidin

  6. Low Reflectivity and High Flexibility of Tin-Doped Indium Oxide Nanofiber Transparent Electrodes

    KAUST Repository

    Wu, Hui

    2011-01-12

    Tin-doped indium oxide (ITO) has found widespread use in solar cells, displays, and touch screens as a transparent electrode; however, two major problems with ITO remain: high reflectivity (up to 10%) and insufficient flexibility. Together, these problems severely limit the applications of ITO films for future optoelectronic devices. In this communication, we report the fabrication of ITO nanofiber network transparent electrodes. The nanofiber networks show optical reflectivity as low as 5% and high flexibility; the nanofiber networks can be bent to a radius of 2 mm with negligible changes in the sheet resistance. © 2010 American Chemical Society.

  7. Indium-tin oxide surface treatments: Effects on the performance of liquid crystal devices

    International Nuclear Information System (INIS)

    Abderrahmen, A.; Romdhane, F.F.; Ben Ouada, H.; Gharbi, A.

    2006-01-01

    In this work, we investigate the effect of indium tin oxide (ITO) substrate cleaning on the surface properties. Wettability technique was used to measure the contact angle and the surface energy of the different treated ITO substrates. It is found that treatment with the methanol without dehydration gives the lowest water contact angle (most hydrophilic surface) and the highest surface energy compared to other solvents. This result was confirmed by impedance measurements performed on nematic liquid crystal cells with ITO electrodes. Indeed, we check the decrease of ionic entities in the interface ITO/liquid crystal. The polarity and dielectric parameters of the used solvents explain the obtained results

  8. Indium-tin oxide surface treatments: Effects on the performance of liquid crystal devices

    Energy Technology Data Exchange (ETDEWEB)

    Abderrahmen, A. [Laboratoire de physique et chimie des interfaces, Faculte des sciences, 5000, Monastir (Tunisia)]. E-mail: asma_abderrahmen@yahoo.fr; Romdhane, F.F. [Laboratoire de la matiere molle, Faculte des sciences, Tunis (Tunisia); Ben Ouada, H. [Laboratoire de physique et chimie des interfaces, Faculte des sciences, 5000, Monastir (Tunisia); Gharbi, A. [Laboratoire de la matiere molle, Faculte des sciences, Tunis (Tunisia)

    2006-03-15

    In this work, we investigate the effect of indium tin oxide (ITO) substrate cleaning on the surface properties. Wettability technique was used to measure the contact angle and the surface energy of the different treated ITO substrates. It is found that treatment with the methanol without dehydration gives the lowest water contact angle (most hydrophilic surface) and the highest surface energy compared to other solvents. This result was confirmed by impedance measurements performed on nematic liquid crystal cells with ITO electrodes. Indeed, we check the decrease of ionic entities in the interface ITO/liquid crystal. The polarity and dielectric parameters of the used solvents explain the obtained results.

  9. Effect of passive film on electrochemical surface treatment for indium tin oxide

    International Nuclear Information System (INIS)

    Wu, Yung-Fu; Chen, Chi-Hao

    2013-01-01

    Highlights: ► Oxalic, tartaric, and citric acid baths accompanying with applied voltages were used to treat the ITO surface. ► We investigated the changes in ITO surfaces by examining the potentiodynamic behavior of ITO films. ► AFM analysis showed the formation of a passive layer could assist to planarize surface. ► XPS analysis indicated this passive layer was mainly composed of SnO 2. ► A better planarization was obtained by treating in 3.0 wt.% tartaric acid at 0.5 V due to weak complexation strength. - Abstract: Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO 2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid.

  10. Tailor-made surface plasmon polaritons above the bulk plasma frequency: a design strategy for indium tin oxide

    International Nuclear Information System (INIS)

    Brand, S; Abram, R A; Kaliteevski, M A

    2010-01-01

    A simple phase-matching approach is employed as a design aid to engineer surface plasmon polariton states at the interface of an indium tin oxide layer on the top of a Bragg reflector. By altering the details of the reflector, and in particular the ordering of the layers and the thickness of the layer adjacent to the indium tin oxide, it is possible to readily adjust the energy of these states. Examples of structures engineered to give rise to distinctive features in the reflectivity spectra above the bulk screened plasma frequency for states of both possible polarizations are presented.

  11. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  12. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    International Nuclear Information System (INIS)

    Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

  13. Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

    Science.gov (United States)

    Georgieva, V.; Aleksandrova, M.; Stefanov, P.; Grechnikov, A.; Gadjanova, V.; Dilova, T.; Angelov, Ts

    2014-12-01

    A study of NO2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO2 concentrations. The QCM-ITO system becomes sensitive at NO2 concentration >= 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO2 concentration. When the NO2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO2 in the air at room temperature.

  14. Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

    International Nuclear Information System (INIS)

    Georgieva, V; Gadjanova, V; Angelov, Ts; Aleksandrova, M; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Stefanov, P; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Dilova, T; Grechnikov, A

    2014-01-01

    A study of NO 2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO 2 concentrations. The QCM-ITO system becomes sensitive at NO 2 concentration ≥ 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO 2 concentration. When the NO 2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO 2 in the air at room temperature

  15. Optically active polyurethane@indium tin oxide nanocomposite: Preparation, characterization and study of infrared emissivity

    International Nuclear Information System (INIS)

    Yang, Yong; Zhou, Yuming; Ge, Jianhua; Yang, Xiaoming

    2012-01-01

    Highlights: ► Silane coupling agent of KH550 was used to connect the ITO and polyurethanes. ► Infrared emissivity values of the hybrids were compared and analyzed. ► Interfacial synergistic action and orderly secondary structure were the key factors. -- Abstract: Optically active polyurethane@indium tin oxide and racemic polyurethane@indium tin oxide nanocomposites (LPU@ITO and RPU@ITO) were prepared by grafting the organics onto the surfaces of modified ITO nanoparticles. LPU@ITO and RPU@ITO composites based on the chiral and racemic tyrosine were characterized by FT-IR, UV–vis spectroscopy, X-ray diffraction (XRD), SEM, TEM, and thermogravimetric analysis (TGA), and the infrared emissivity values (8–14 μm) were investigated in addition. The results indicated that the polyurethanes had been successfully grafted onto the surfaces of ITO without destroying the crystalline structure. Both composites possessed the lower infrared emissivity values than the bare ITO nanoparticles, which indicated that the interfacial interaction had great effect on the infrared emissivity. Furthermore, LPU@ITO based on the optically active polyurethane had the virtue of regular secondary structure and more interfacial synergistic actions between organics and inorganics, thus it exhibited lower infrared emissivity value than RPU@ITO based on the racemic polyurethane.

  16. Work function tuning of tin-doped indium oxide electrodes with solution-processed lithium fluoride

    Energy Technology Data Exchange (ETDEWEB)

    Ow-Yang, C.W., E-mail: cleva@sabanciuniv.edu [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Nanotechnology Application Center, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Jia, J. [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Aytun, T. [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Zamboni, M.; Turak, A. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L8 (Canada); Saritas, K. [Materials Science and Engineering Program, Sabanci University, Orhanli, Tuzla, 34956 Istanbul (Turkey); Shigesato, Y. [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

    2014-05-30

    Solution-processed lithium fluoride (sol-LiF) nanoparticles synthesized in polymeric micelle nanoreactors enabled tuning of the surface work function of tin-doped indium oxide (ITO) films. The micelle reactors provided the means for controlling surface coverage by progressively building up the interlayer through alternating deposition and plasma etch removal of the polymer. In order to determine the surface coverage and average interparticle distance, spatial point pattern analysis was applied to scanning electron microscope images of the nanoparticle dispersions. The work function of the sol-LiF modified ITO, obtained from photoelectron emission yield spectroscopy analysis, was shown to increase with surface coverage of the sol-LiF particles, suggesting a lateral depolarization effect. Analysis of the photoelectron emission energy distribution in the near threshold region revealed the contribution of surface states for surface coverage in excess of 14.1%. Optimization of the interfacial barrier was achieved through contributions from both work function modification and surface states. - Highlights: • Work function of indium tin oxide increased with LiF nanoparticle coverage. • Work function was analyzed via photoelectron emission yield (PEYS). • At higher surface coverage, the energy distribution of PEYS increased. • Pre-threshold increase in PEYS consistent with emission from surface states.

  17. Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing

    International Nuclear Information System (INIS)

    Kim, Jun Young; Kim, Jae-Kwan; Kim, Ja-Yeon; Kwon, Min-Ki; Yoon, Jae-Sik; Lee, Ji-Myon

    2013-01-01

    Ag-embedded indium tin oxide (ITO) films were deposited on Corning 1737 glass by radio-frequency magnetron sputtering under an Ar or Ar/O 2 mixed gas ambient with a combination of ITO and Ag targets that were sputtered alternately by switching on and off the shutter of the sputter gun. The effects of a subsequent surface treatment using H 2 and H 2 + O 2 mixed gas plasma were also examined. The specific resistance of the as-deposited Ag-embedded ITO sample was lower than that of normal ITO. The transmittance was quenched when Ag was incorporated in ITO. To enhance the specific resistance of Ag-embedded ITO, a surface treatment was conducted using H 2 or H 2 + O 2 mixed gas plasma. Although all samples showed improved specific resistance after the H 2 plasma treatment, the transmittance was quenched due to the formation of agglomerated metals on the surface. The specific resistance of the film was improved without any deterioration of the transmittance after a H 2 + O 2 mixed gas plasma treatment. - Highlights: • Ag-embedded indium tin oxide was deposited. • The contact resistivity was decreased by H 2 + O 2 plasma treatment. • The process was carried out at room temperature without thermal treatment. • The mechanism of enhancing the contact resistance was clarified

  18. Modulating indium doped tin oxide electrode properties for laccase electron transfer enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Diaconu, Mirela [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Chira, Ana [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania); Radu, Lucian, E-mail: gl_radu@chim.upb.ro [Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania)

    2014-08-28

    Indium doped tin oxide (ITO) electrodes were functionalized with gold nanoparticles (GNPs) and cysteamine monolayer to enhance the heterogeneous electron transfer process of laccase from Trametes versicolor. The assembly of GNP on ITO support was performed through generation of H{sup +} species at the electrode surface by hydroquinone electrooxidation at 0.9 V vs Ag/AgCl. Uniform distribution of gold nanoparticle aggregates on electrode surfaces was confirmed by atomic force microscopy. The size of GNP aggregates was in the range of 200–500 nm. The enhanced charge transfer at the GNP functionalized ITO electrodes was observed by cyclic voltammetry (CV) and electrochemical impedance spectroscopy. Electrocatalytic behavior of laccase immobilized on ITO modified electrode toward oxygen reduction reaction was evaluated using CV in the presence of 2,2′-azino-bis 3-ethylbenzothiazoline-6-sulfuric acid (ABTS). The obtained sigmoidal-shaped voltammograms for ABTS reduction in oxygen saturated buffer solution are characteristic for a catalytic process. The intensity of catalytic current increased linearly with mediator concentration up to 6.2 × 10{sup −4} M. The registered voltammogram in the absence of ABTS mediator clearly showed a significant faradaic current which is the evidence of the interfacial oxygen reduction. - Highlights: • Assembly of gold nanoparticles on indium tin oxide support at positive potentials • Electrochemical and morphological evaluation of the gold nanoparticle layer assembly • Bioelectrocatalytic oxygen reduction on laccase modified electrode.

  19. Optimisation of chemical solution deposition of indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

    2014-12-31

    An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

  20. Solubility of indium-tin oxide in simulated lung and gastric fluids: Pathways for human intake.

    Science.gov (United States)

    Andersen, Jens Christian Østergård; Cropp, Alastair; Paradise, Diane Caroline

    2017-02-01

    From being a metal with very limited natural distribution, indium (In) has recently become disseminated throughout the human society. Little is known of how In compounds behave in the natural environment, but recent medical studies link exposure to In compounds to elevated risk of respiratory disorders. Animal tests suggest that exposure may lead to more widespread damage in the body, notably the liver, kidneys and spleen. In this paper, we investigate the solubility of the most widely used In compound, indium-tin oxide (ITO) in simulated lung and gastric fluids in order to better understand the potential pathways for metals to be introduced into the bloodstream. Our results show significant potential for release of In and tin (Sn) in the deep parts of the lungs (artificial lysosomal fluid) and digestive tract, while the solubility in the upper parts of the lungs (the respiratory tract or tracheobronchial tree) is very low. Our study confirms that ITO is likely to remain as solid particles in the upper parts of the lungs, but that particles are likely to slowly dissolve in the deep lungs. Considering the prolonged residence time of inhaled particles in the deep lung, this environment is likely to provide the major route for uptake of In and Sn from inhaled ITO nano- and microparticles. Although dissolution through digestion may also lead to some uptake, the much shorter residence time is likely to lead to much lower risk of uptake. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

  1. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung

    2012-05-22

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

  2. Electrochemical impedance spectroscopy investigation on indium tin oxide films under cathodic polarization in NaOH solution

    International Nuclear Information System (INIS)

    Gao, Wenjiao; Cao, Si; Yang, Yanze; Wang, Hao; Li, Jin; Jiang, Yiming

    2012-01-01

    The electrochemical corrosion behaviors of indium tin oxide (ITO) films under the cathodic polarization in 0.1 M NaOH solution were investigated by electrochemical impedance spectroscopy. The as-received and the cathodically polarized ITO films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction for morphological, compositional and structural studies. The results showed that ITO films underwent a corrosion process during the cathodic polarization and the main component of the corrosion products was body-centered cubic indium. The electrochemical impedance parameters were related to the effect of the cathodic polarization on the ITO specimens. The capacitance of ITO specimens increased, while the charge transfer resistance and the inductance decreased with the increase of the polarization time. The proposed mechanism indicated that the corrosion products (metallic indium) were firstly formed during the cathodic polarization and then absorbed on the surface of the ITO film. As the surface was gradually covered by indium particles, the corrosion process was suppressed. - Highlights: ► Cathodic polarization of indium tin oxide (ITO) in 0.1 M NaOH. ► Cathodic polarization studied with electrochemical impedance spectroscopy. ► ITO underwent a corrosion attack during cathodic polarization, indium was observed. ► Electrochemical parameters of ITO were obtained using equivalent electrical circuit. ► A corrosion mechanism is proposed.

  3. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  4. Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

    Directory of Open Access Journals (Sweden)

    M. Zervos

    2014-05-01

    Full Text Available Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001. We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.

  5. Patterning crystalline indium tin oxide by high repetition rate femtosecond laser-induced crystallization

    International Nuclear Information System (INIS)

    Cheng, Chung-Wei; Lin, Cen-Ying; Shen, Wei-Chih; Lee, Yi-Ju; Chen, Jenq-Shyong

    2010-01-01

    A method is proposed for patterning crystalline indium tin oxide (c-ITO) patterns on amorphous ITO (a-ITO) thin films by femtosecond laser irradiation at 80 MHz repetition rate followed by chemical etching. In the proposed approach, the a-ITO film is transformed into a c-ITO film over a predetermined area via the heat accumulation energy supplied by the high repetition rate laser beam, and the unirradiated a-ITO film is then removed using an acidic etchant solution. The fabricated c-ITO patterns are observed using scanning electron microscopy and cross-sectional transmission electron microscopy. The crystalline, optical, electrical properties were measured by X-ray diffraction, spectrophotometer, and four point probe station, respectively. The experimental results show that a high repetition rate reduces thermal shock and yields a corresponding improvement in the surface properties of the c-ITO patterns.

  6. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    International Nuclear Information System (INIS)

    Zhang, Yingjie; Aziz, Hany

    2014-01-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10 5  cd/m 2 is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  7. Screen-printed Tin-doped indium oxide (ITO) films for NH3 gas sensing

    International Nuclear Information System (INIS)

    Mbarek, Hedia; Saadoun, Moncef; Bessais, Brahim

    2006-01-01

    Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH 3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide

  8. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  9. Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

    Science.gov (United States)

    Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

    2015-09-01

    This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

  10. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  11. The electronic structure of co-sputtered zinc indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  12. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Doggart, P.; Bristow, N.; Kettle, J., E-mail: j.kettle@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean St., Bangor, Gwynedd, Wales LL57 1UT (United Kingdom)

    2014-09-14

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (μ{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and μ{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  13. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

    2012-05-01

    In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  14. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

    2012-01-01

    In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  15. Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

    Directory of Open Access Journals (Sweden)

    Zhanxu Chen

    2016-01-01

    Full Text Available The indium tin oxide (ITO has been widely applied in light emitting diodes (LEDs as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

  16. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    International Nuclear Information System (INIS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-01-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

  17. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  18. Flexible organic light-emitting diodes consisting of a platinum doped indium tin oxide anode

    International Nuclear Information System (INIS)

    Hsu, C-M; Huang, C-Y; Cheng, H-E; Wu, W-T

    2009-01-01

    This paper demonstrates that a flexible organic light-emitting diode (OLED) with a platinum (Pt)-doped indium tin oxide (ITO) anode could show superior electro-optical characteristics to those of a conventional device. The threshold voltage and turn-on voltage of an OLED device consisting of an aluminium/lithium fluoride/tris(8-hydroxyquinoline) aluminium/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4, 4'-diamine/Pt-doped ITO/ITO structure were reduced by 1.2 V and 0.8 V, respectively. Current efficiency was found improved for a driving voltage of less than 6.5 V as a result of the enhanced hole-injection rate, attributed mainly to the elevated surface work function and partly reduced surface roughness of ITO by the incorporated Pt atoms in the ITO matrix.

  19. Deposition of indium tin oxide thin films by cathodic arc ion plating

    International Nuclear Information System (INIS)

    Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

    2005-01-01

    Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

  20. Respiration sensor made from indium tin oxide-coated conductive fabrics

    Science.gov (United States)

    Kim, Sun Hee; Lee, Joo Hyeon; Jee, Seung Hyun

    2015-02-01

    Conductive fabrics with new properties and applications have been the subject of extensive research over the last few years, with wearable respiration sensors attracting much attention. Different methods can be used to obtain fabrics that are electrically conducting, an essential property for various applications. For instance, fabrics can be coated with conductive polymers. Here, indium tin oxide (ITO)-coated conductive fabrics with cross-linked polyvinyl alcohol (C-PVA) were prepared using a doctor-blade. The C-PVA was employed in the synthesis to bind ITO on the fabrics with the highest possible mechanical strength. The feasibility of a respiration sensor prepared using the ITO-coated conductive fabric was investigated. The ITO-coated conductive fabric with the C-PVA was demonstrated to have a high potential for use in respiration sensors.

  1. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  2. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  3. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Directory of Open Access Journals (Sweden)

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  4. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A

    2002-11-30

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrol onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  5. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A.

    2002-01-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  6. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Science.gov (United States)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J. P.; Hakam, A.; Ennaoui, A.

    2002-11-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM).

  7. Gold nanoparticle arrays directly grown on nanostructured indium tin oxide electrodes: Characterization and electroanalytical application

    International Nuclear Information System (INIS)

    Zhang Jingdong; Oyama, Munetaka

    2005-01-01

    This work describes an improved seed-mediated growth approach for the direct attachment and growth of mono-dispersed gold nanoparticles on nanostructured indium tin oxide (ITO) surfaces. It was demonstrated that, when the seeding procedure of our previously reported seed-mediated growth process on an ITO surface was modified, the density of gold nanospheres directly grown on the surface could be highly improved, while the emergence of nanorods was restrained. By field emission scanning electron microscopy (FE-SEM) and cyclic voltammetry, the growth of gold nanoparticles with increasing growth time on the defect sites of nanostructured ITO surface was monitored. Using a [Fe(China) 6 ] 3- /[Fe(China) 6 ] 4- redox probe, the increasingly facile heterogeneous electron transfer kinetics resulting from the deposition and growth of gold nanoparticle arrays was observed. The as-prepared gold nanoparticle arrays exhibited high catalytic activity toward the electrooxidation of nitric oxide, which could provide electroanalytical application for nitric oxide sensing

  8. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10{sup 5} cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  9. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  10. Surface passivation function of indium-tin-oxide-based nanorod structural sensors

    International Nuclear Information System (INIS)

    Lin, Tzu-Shun; Lee, Ching-Ting; Lee, Hisn-Ying; Lin, Chih-Chien

    2012-01-01

    Employing self-shadowing traits of an oblique-angle electron-beam deposition system, various indium tin oxide (ITO) nanorod arrays were deposited on a silicon substrate and used as extended-gate field-effect-transistor (EGFET) pH sensors. The length and morphology of the deposited ITO nanorod arrays could be changed and controlled under different deposition conditions. The ITO nanorod structural EGFET pH sensors exhibited high sensing performances owing to the larger sensing surface area. The sensitivity of the pH sensors with 150-nm-length ITO nanorod arrays was 53.96 mV/pH. By using the photoelectrochemical treatment of the ITO nanorod arrays, the sensitivity of the pH sensors with 150-nm-length passivated ITO nanorod arrays was improved to 57.21 mV/pH.

  11. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  12. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

    2007-01-01

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

  13. Organic photovoltaics using thin gold film as an alternative anode to indium tin oxide

    International Nuclear Information System (INIS)

    Haldar, Amrita; Yambem, Soniya D.; Liao, Kang-Shyang; Alley, Nigel J.; Dillon, Eoghan P.; Barron, Andrew R.; Curran, Seamus A.

    2011-01-01

    Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C 61 -butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm 2 , open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control.

  14. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    Willis, David A; Dreier, Adam L

    2009-01-01

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  15. The effect of preparation method on the proton conductivity of indium doped tin pyrophosphates

    DEFF Research Database (Denmark)

    Anfimova, Tatiana; Lie-Andersen, T.; Jensen, E. Pristed

    2015-01-01

    Indium doped tin pyrophosphates were prepared by three synthetic routes. A heterogeneous synthesis from metal oxides with excess phosphoric acid produces crystalline phosphate particles with a phosphorus rich amorphous phase along the grain boundaries. The amorphous phase prevents the agglomeration...... decrease in conductivity as well as significant agglomeration of the particles, as evident in TEM and from particle size distribution measurements. Homogeneous synthesis with soluble metal acetates or chlorides as precursors results in a single crystalline phase with a small particle size, but strongly...... agglomerated, and a low conductivity at 10- 7-10- 6 Scm- 1 level. Further impregnation of the agglomerates with phosphoric acid does not lead to formation of the phosphorus rich amorphous layers on the surface of the crystals. An intermediate conductivity of 10- 3 Scm- 1 was observed for the acid treated...

  16. Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

  17. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

    International Nuclear Information System (INIS)

    Wang, R.X.; Beling, C.D.; Fung, S.; Djurisic, A.B.; Ling, C.C.; Li, S.

    2005-01-01

    The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In

  18. Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

    Science.gov (United States)

    Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

    2017-09-01

    Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

  19. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    International Nuclear Information System (INIS)

    Ederth, J.; Hultaaker, A.; Niklasson, G.A.; Granqvist, C.G.; Heszler, P.; Doorn, A.R. van; Jongerius, M.J.; Burgard, D.

    2005-01-01

    Electrical and optical properties were investigated in porous thin films consisting of In 2 O 3 :Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap. (orig.)

  20. Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition

    Directory of Open Access Journals (Sweden)

    Mario Boehme

    2011-02-01

    Full Text Available Conductive nanotubes consisting of indium tin oxide (ITO were fabricated by electroless deposition using ion track etched polycarbonate templates. To produce nanotubes (NTs with thin walls and small surface roughness, the tubes were generated by a multi-step procedure under aqueous conditions. The approach reported below yields open end nanotubes with well defined outer diameter and wall thickness. In the past, zinc oxide films were mostly preferred and were synthesized using electroless deposition based on aqueous solutions. All these methods previously developed, are not adaptable in the case of ITO nanotubes, even with modifications. In the present work, therefore, we investigated the necessary conditions for the growth of ITO-NTs to achieve a wall thickness of around 10 nm. In addition, the effects of pH and reductive concentrations for the formation of ITO-NTs are also discussed.

  1. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  2. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  3. Electrochemical synthesis of gold nanoparticles onto indium tin oxide glass and application in biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Hu Yanling; Song Yan; Wang Yuan; Di Junwei, E-mail: djw@suda.edu.cn

    2011-07-29

    A simple one-step method for the electrochemical deposition of gold nanoparticles (GNPs) onto bare indium tin oxide film coated glass substrate without any template or surfactant was investigated. The effect of electrolysis conditions such as potential range, temperature, concentration and deposition cycles were examined. The connectivity of GNPs was analyzed by UV-Vis absorption spectroscopy and scanning electron microscopy. The nanoparticles were found to connect in pairs or to coalesce in larger numbers. The twin GNPs display a transverse and a longitudinal localized surface plasmon resonance (LSPR) band, which is similar to that of gold nanorods. The presence of longitudinal LSPR band correlates with high refractive index sensitivity. Conjugation of the twin-linked GNPs with albumin bovine serum-biotin was employed for the detection of streptavidin as a model based on the specific binding affinity in biotin/streptavidin pairs. The spectrophotometric sensor showed concentration-dependent binding for streptavidin.

  4. Tin/Indium nanobundle formation from aggregation or growth of nanoparticles

    International Nuclear Information System (INIS)

    Jiang Hongjin; Moon, Kyoung-sik; Sun Yangyang; Wong, C. P.; Hua, Fay; Pal, Tarasankar; Pal, Anjali

    2008-01-01

    Shape and size controlled gram level synthesis of tin/indium (SnIn) alloy nanoparticles and nanobundles is reported. Poly(N-vinylpyrrolidone) (PVP) was employed as a capping agent, which could control the growth and structure of the alloy particles under varying conditions. Transmission electron microscopy showed that unique SnIn alloy nanobundles could be synthesized from the bulk materials above a certain concentration of PVP and below this concentration, discrete spherical nanoparticles of variable size were evolved. The morphology and the composition of the as-synthesized SnIn alloy nanobundles were investigated by high-resolution transmission electron microscopy (TEM). The possible mechanisms on the formation of these structures were discussed

  5. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

    2015-11-01

    Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  6. Correlative scanning electron and confocal microscopy imaging of labeled cells coated by indium-tin-oxide

    KAUST Repository

    Rodighiero, Simona

    2015-03-22

    Confocal microscopy imaging of cells allows to visualize the presence of specific antigens by using fluorescent tags or fluorescent proteins, with resolution of few hundreds of nanometers, providing their localization in a large field-of-view and the understanding of their cellular function. Conversely, in scanning electron microscopy (SEM), the surface morphology of cells is imaged down to nanometer scale using secondary electrons. Combining both imaging techniques have brought to the correlative light and electron microscopy, contributing to investigate the existing relationships between biological surface structures and functions. Furthermore, in SEM, backscattered electrons (BSE) can image local compositional differences, like those due to nanosized gold particles labeling cellular surface antigens. To perform SEM imaging of cells, they could be grown on conducting substrates, but obtaining images of limited quality. Alternatively, they could be rendered electrically conductive, coating them with a thin metal layer. However, when BSE are collected to detect gold-labeled surface antigens, heavy metals cannot be used as coating material, as they would mask the BSE signal produced by the markers. Cell surface could be then coated with a thin layer of chromium, but this results in a loss of conductivity due to the fast chromium oxidation, if the samples come in contact with air. In order to overcome these major limitations, a thin layer of indium-tin-oxide was deposited by ion-sputtering on gold-decorated HeLa cells and neurons. Indium-tin-oxide was able to provide stable electrical conductivity and preservation of the BSE signal coming from the gold-conjugated markers. © 2015 Wiley Periodicals, Inc.

  7. Thermal transport properties of polycrystalline tin-doped indium oxide films

    International Nuclear Information System (INIS)

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-01-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

  8. A study of the characteristics of indium tin oxide after chlorine electro-chemical treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Moonsoo; Kim, Jongmin; Cho, Jaehee; Kim, Hyunwoo; Lee, Nayoung; Choi, Byoungdeog, E-mail: bdchoi@skku.edu

    2016-10-15

    Graphical abstract: The presence of Chlorine in the outer surface resulted in a highly electro-negative surface states and an increase in the vacuum energy level. - Highlights: • We investigated the influence of chlorine surface treatment on ITO properties. • Chlorination induced the change of the electro-static potential in the outer surface. • Chlorine electro-chemical treatment of ITO is a simple, fast and effective technique. - Abstract: In this work, we investigate the influence of a chlorine-based electro-chemical surface treatment on the characteristics of indium tin oxide (ITO) including the work function, chemical composition, and phase transition. The treated ITOs were characterized using X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS), 4-point probe measurements, and grazing incidence X-ray diffraction (GI-XRD). We confirmed a change of the chemical composition in the near-surface region of the ITO and the formation of indium-chlorine (In-Cl) bonds and surface dipoles (via XPS). In particular, the change of the electro-static potential in the outer surface was caused by chlorination. Due to the vacuum-level shift after the electro-chemical treatment in a dilute hydrochloric acid, the ITO work function was increased by ∼0.43 eV (via UPS); furthermore, the electro-negativity of the chlorine anions attracted electrons to emit them from the hole transport layer (HTL) to the ITO anodes, resulting in an increase of the hole-injection efficiency.

  9. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH{sub 2}{sup +} ions implanted-indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chenyao; Jiao Jiao; Chen Qunxia [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Xia Ji [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Shuoqi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu Jingbo, E-mail: hujingbo@bnu.edu.c [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Li Qilong [College of Chemistry, Beijing Normal University, Beijing 100875 (China)

    2010-12-01

    A new type of gold nanoparticle attached to a NH{sub 2}{sup +} ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH{sub 2}/indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10{sup 15} ions/cm{sup 2}. The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH{sub 2}{sup +} ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  10. Intramolecular charge separation in spirobifluorene-based donor–acceptor compounds adsorbed on Au and indium tin oxide electrodes

    International Nuclear Information System (INIS)

    Heredia, Daniel; Otero, Luis; Gervaldo, Miguel; Fungo, Fernando; Dittrich, Thomas; Lin, Chih-Yen; Chi, Liang-Chen; Fang, Fu-Chuan; Wong, Ken-Tsung

    2013-01-01

    Surface photovoltage (SPV) measurements were performed with a Kelvin-probe in spirobifluorene-based donor (diphenylamine)–acceptor (dicyano or cyanoacrylic acid moieties) compounds adsorbed from highly diluted solutions onto Au and indium tin oxide electrode surfaces. Strong intramolecular charge separation (negative SPV signals up to more than 0.1 V) due to directed molecule adsorption was observed only for spirobifluorene donor–acceptor compounds with carboxylic acid moiety. SPV signals and onset energies of electronic transitions depended on ambience conditions. - Highlights: ► Fluorene donor–acceptor derivatives were adsorbed at Au and indium tin oxide. ► Surface photovoltage measurements were performed with a Kelvin-probe. ► Strong intra-molecular charge separation was observed. ► SPV signals depended on ambience conditions

  11. Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

    2013-01-01

    In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

  12. Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode

    International Nuclear Information System (INIS)

    Ko, Yoon Duk; Lee, Chang Hun; Moon, Doo Kyung; Kim, Young Sung

    2013-01-01

    This paper discusses the effect of oxygen on the transparent conducting properties and mechanical durability of the amorphous indium zinc tin oxide (IZTO) films. IZTO films deposited on flexible clear polyimide (PI) substrate using pulsed direct current (DC) magnetron sputtering at room temperature under various oxygen partial pressures. All IZTO films deposited at room temperature exhibit an amorphous structure. The electrical and optical properties of the IZTO films were sensitively influenced by oxygen partial pressures. At optimized deposition condition of 3.0% oxygen partial pressure, the IZTO film shows the lowest resistivity of 6.4 × 10 −4 Ωcm, high transmittance of over 80% in the visible range, and figure of merit value of 3.6 × 10 −3 Ω −1 without any heat controls. In addition, high work function and good mechanical flexibility of amorphous IZTO films are beneficial to flexible applications. It is proven that the proper oxygen partial pressure is important parameter to enhance the transparent conducting properties of IZTO films on PI substrate deposited at room temperature. - Highlights: • Indium zinc tin oxide (IZTO) films were deposited on polyimide at room temperature. • Transparent conducting properties of IZTO were influenced with oxygen partial pressure. • The smooth surface and high work function of IZTO were beneficial to anode layer. • The mechanical reliability of IZTO shows better performance to indium tin oxide film

  13. Multilayer microfluidic systems with indium-tin-oxide microelectrodes for studying biological cells

    International Nuclear Information System (INIS)

    Wu, Hsiang-Chiu; Chen, Hsin; Lyau, Jia-Bo; Lin, Min-Hsuan; Chuang, Yung-Jen

    2017-01-01

    Contemporary semiconductor and micromachining technologies have been exploited to develop lab-on-a-chip microsystems, which enable parallel and efficient experiments in molecular and cellular biology. In these microlab systems, microfluidics play an important role for automatic transportation or immobilization of cells and bio-molecules, as well as for separation or mixing of different chemical reagents. However, seldom microlab systems allow both morphology and electrophysiology of biological cells to be studied in situ . This kind of study is important, for example, for understanding how neuronal networks grow in response to environmental stimuli. To fulfill this application need, this paper investigates the possibility of fabricating multi-layer photoresists as microfluidic systems directly above a glass substrate with indium-tin-oxide (ITO) electrodes. The microfluidic channels are designed to guide and trap biological cells on top of ITO electrodes, through which the electrical activities of cells can be recorded or elicited. As both the microfluidic system and ITO electrodes are transparent, the cellular morphology is observable easily during electrophysiological studies. Two fabrication processes are proposed and compared. One defines the structure and curing depth of each photoresist layer simply by controlling the exposure time in lithography, while the other further utilizes a sacrificial layer to defines the structure of the bottom layer. The fabricated microfluidic system is proved bio-compatible and able to trap blood cells or neurons. Therefore, the proposed microsystem will be useful for studying cultured cells efficiently in applications such as drug-screening. (paper)

  14. Porous screen printed indium tin oxide (ITO) for NOx gas sensing

    International Nuclear Information System (INIS)

    Mbarek, H.; Saadoun, M.; Bessais, B.

    2007-01-01

    Tin-doped Indium Oxide (ITO) films were prepared by the screen printing method. Transparent and conductive ITO thin films were obtained from an organometallic based paste fired in an Infrared furnace. The Screen printed ITO films were found to be granular and porous. This specific morphology was found to be suitable for sensing different gaseous species. This work investigates the possibility of using screen printed (ITO) films as a specific material for efficient NO x gas sensing. It was found that screen printed ITO is highly sensitive and stable towards NO x , especially for gas concentration higher than 50 ppm and starting from a substrate working temperature of about 180 C. The sensitivity of the ITO films increases with increasing NO x concentration and temperature. The sensitivity and stability of the screen printed ITO based sensors were studied within time. The ITO crystallite grain size dimension was found to be a key parameter that influences the gas response characteristics. Maximum gas sensitivity and minimum response time were observed for ITO films having lower crystallite size dimensions. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

    International Nuclear Information System (INIS)

    Hwang, Myun-sung; Jeong, Bong-yong; Moon, Jooho; Chun, Sang-Ki; Kim, Jihoon

    2011-01-01

    Highlights: → Inkjet printing of ITO films. → Ag-grid was inkjet-printed in between two ITO layers in order to improve the electrical property. → Ag-grid inserted ITO films with 2 mm Ag-grid pitch showed the sheet resistance less than 3.4 Ω/sq and the transmittance higher than 82%. - Abstract: Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 deg. C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 deg. C under microwave.

  16. Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

    International Nuclear Information System (INIS)

    Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

    2004-01-01

    We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

  17. Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

    Science.gov (United States)

    Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

    2018-04-01

    Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

  18. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  19. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

    International Nuclear Information System (INIS)

    Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

    1980-01-01

    The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

  20. Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

    International Nuclear Information System (INIS)

    Chiang, Jung-Lung; Jhan, Syun-Sheng; Hsieh, Shu-Chen; Huang, An-Li

    2009-01-01

    Indium tin oxide (ITO) thin films were deposited onto Si and SiO 2 /Si substrates using a radio frequency sputtering system with a grain size of 30-50 nm and thickness of 270-280 nm. ITO/Si and ITO/SiO 2 /Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO pH-EGFET). The semiconductor parameter analysis measurement (Keithley 4200) was utilized to measure the current-voltage (I-V) characteristics curves and study the sensing properties of the ITO pH-EGFET. The linear pH voltage sensitivities were about 41.43 and 43.04 mV/pH for the ITO/Si and ITO/SiO 2 /Si sensing structures, respectively. At the same time, both pH current sensitivities were about 49.86 and 51.73 μA/pH, respectively. Consequently, both sensing structures can be applied as extended-gate sensing heads. The separative structure is suitable for application as a disposable pH sensor.

  1. Opto-electronic properties of chromium doped indium-tin-oxide films deposited at room temperature

    International Nuclear Information System (INIS)

    Chang Weiche; Lee Shihchin; Yang Chihhao; Lin Tienchai

    2008-01-01

    Indium-tin-oxide (ITO) doped chromium films were deposited on Corning 7059 glass prepared by radio frequency (RF) magnetron sputtering under various levels of sputtering power for the chromium target. Experimental results show that the surface roughness slightly decreases by co-sputtering Cr. The pure ITO films deposited at room temperature were amorphous-like. At 15 W of chromium target power, the structure of ITO: Cr film mainly consists of (2 2 2) crystallization plane, with minority of (2 1 1), (4 4 0), (6 6 2) crystallization planes. The carrier concentration of the ITO films increases with increasing the doping of chromium, however the mobility of the carrier decreases. When the sputtering power of the chromium target is at 7.5 W, there has a maximum carrier mobility of 27.3 cm 2 V -1 s -1 , minimum carrier concentration of 2.47 x 10 20 cm -3 , and lowest resistivity of 7.32 x 10 -4 Ω cm. The transmittance of all the chromium doped ITO films at the 300-800 nm wavelength region in this experiment can reach up to 70-85%. In addition, the blue shift of UV-Vis spectrum is not observed with the increase of carrier concentration

  2. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-01-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 x 10 -4 Ω cm at 80 deg. C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density

  3. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  4. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  5. Fabrication of indium tin oxide (ITO) thin film with pre-treated sol coating

    International Nuclear Information System (INIS)

    Hong, Sung-Jei; Han, Jeong-In

    2004-01-01

    A new pre-treated sol-coating method to fabricate an indium tin oxide (ITO) thin film is introduced in this paper. The pre-treatment sol-coating method is to form a seed layer on the substrate before spin coating of ITO sol. The pre-treatment was carried out at room temperature in order not to damage the substrate during the pre-treatment. It is effective to enhance the formation of the ITO sol film on the substrate, owing to the seed layer. The seed layer consists of ultrafine grains, which are observed at the pre-treated substrate. For the optimal pre-treatment condition, we used pre-treatment times of 24, 48, 72, and 96 hours to observe the effect on the characteristics of ITO sol film. As a result, the lowest resistance could be achieved with a pre-treatment time of 72 hours. The optical transmittance of the ITO sol film with the pre-treatment time of 72 hours exceeded 80 % at a wavelength of 400 nm. So, an ITO sol film with good electrical and optical properties could be fabricated by using the pretreatment sol coating.

  6. Stress-corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices

    International Nuclear Information System (INIS)

    Sierros, Konstantinos A.; Morris, Nicholas J.; Ramji, Karpagavalli; Cairns, Darran R.

    2009-01-01

    Stress corrosion cracking of transparent conductive layers of indium tin oxide (ITO), sputtered on polyethylene terephthalate (PET) substrates, is an issue of paramount importance in flexible optoelectronic devices. These components, when used in flexible device stacks, can be in contact with acid containing pressure-sensitive adhesives or with conductive polymers doped in acids. Acids can corrode the brittle ITO layer, stress can cause cracking and delamination, and stress-corrosion cracking can cause more rapid failure than corrosion alone. The combined effect of an externally-applied mechanical stress to bend the device and the corrosive environment provided by the acid is investigated in this work. We show that acrylic acid which is contained in many pressure-sensitive adhesives can cause corrosion of ITO coatings on PET. We also investigate and report on the combined effect of external mechanical stress and corrosion on ITO-coated PET composite films. Also, it is shown that the combination of stress and corrosion by acrylic acid can cause ITO cracking to occur at stresses less than a quarter of those needed for failure with no corrosion. In addition, the time to failure, under ∼ 1% tensile strain can reduce the total time to failure by as much as a third

  7. Deposition of low sheet resistance indium tin oxide directly onto functional small molecules

    KAUST Repository

    Franklin, Joseph B.

    2014-11-01

    © 2014 Elsevier B.V. All rights reserved. We outline a methodology for depositing tin-doped indium oxide (ITO) directly onto semiconducting organic small molecule films for use as a transparent conducting oxide top-electrode. ITO films were grown using pulsed laser deposition onto copper(II)phthalocyanine (CuPc):buckminsterfullerene (C60) coated substrates. The ITO was deposited at a substrate temperature of 150 °C over a wide range of background oxygen pressures (Pd) (0.67-10 Pa). Deposition at 0.67 ≤ Pd ≤ 4.7 Pa led to delamination of the organic films owing to damage induced by the high energy ablated particles, at intermediate 4.7 ≤ Pd < 6.7 Pa pressures macroscopic cracking is observed in the ITO. Increasing Pd further, ≥ 6.7 Pa, supports the deposition of continuous, polycrystalline and highly transparent ITO films without damage to the CuPc:C60. The free carrier concentration of ITO is strongly influenced by Pd; hence growth at > 6.7 Pa induces a significant decrease in conductivity; with a minimum sheet resistance (Rs) of 145 /□ achieved for 300 nm thick ITO films. To reduce the Rs a multi-pressure deposition was implemented, resulting in the formation of polycrystalline, highly transparent ITO with an Rs of - 20/□ whilst maintaining the inherent functionality and integrity of the small molecule substrate.

  8. Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods.

    Science.gov (United States)

    Tice, Daniel B; Li, Shi-Qiang; Tagliazucchi, Mario; Buchholz, D Bruce; Weiss, Emily A; Chang, Robert P H

    2014-03-12

    Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

  9. Deposition of low sheet resistance indium tin oxide directly onto functional small molecules

    KAUST Repository

    Franklin, Joseph B.; Fleet, Luke R.; Burgess, Claire H.; McLachlan, Martyn A.

    2014-01-01

    © 2014 Elsevier B.V. All rights reserved. We outline a methodology for depositing tin-doped indium oxide (ITO) directly onto semiconducting organic small molecule films for use as a transparent conducting oxide top-electrode. ITO films were grown using pulsed laser deposition onto copper(II)phthalocyanine (CuPc):buckminsterfullerene (C60) coated substrates. The ITO was deposited at a substrate temperature of 150 °C over a wide range of background oxygen pressures (Pd) (0.67-10 Pa). Deposition at 0.67 ≤ Pd ≤ 4.7 Pa led to delamination of the organic films owing to damage induced by the high energy ablated particles, at intermediate 4.7 ≤ Pd < 6.7 Pa pressures macroscopic cracking is observed in the ITO. Increasing Pd further, ≥ 6.7 Pa, supports the deposition of continuous, polycrystalline and highly transparent ITO films without damage to the CuPc:C60. The free carrier concentration of ITO is strongly influenced by Pd; hence growth at > 6.7 Pa induces a significant decrease in conductivity; with a minimum sheet resistance (Rs) of 145 /□ achieved for 300 nm thick ITO films. To reduce the Rs a multi-pressure deposition was implemented, resulting in the formation of polycrystalline, highly transparent ITO with an Rs of - 20/□ whilst maintaining the inherent functionality and integrity of the small molecule substrate.

  10. Fractal morphological analysis of Bacteriorhodopsin (bR) layers deposited onto Indium Tin Oxide (ITO) electrodes

    International Nuclear Information System (INIS)

    Vengadesh, P.; Muniandy, S.V.; Majid, W.H. Abd.

    2009-01-01

    Uniform Bacteriorhodopsin layers for the purpose of fabricating Bacteriorhodopsin-based biosensors were prepared by allowing drying of the layers under a constant electric field. To properly observe and understand the 'electric field effect' on the protein Bacteriorhodopsin, the electric and non-electric field influenced Bacteriorhodopsin layers prepared using a manual syringe-deposition method applied onto Indium Tin Oxide electrodes were structurally investigated using Scanning Electron Microscopy and Atomic Force Microscopy. The results yield obvious morphological differences between the electric and non-electric field assisted Bacteriorhodopsin layers and brings to attention the occurrence of the so-called 'coffee-ring' effect in the latter case. We applied stochastic fractal method based on the generalized Cauchy process to describe the morphological features surrounding the void. Fractal dimension is used to characterize the local regularity of the Bacteriorhodopsin clusters and the correlation exponent is used to describe the long-range correlation between the clusters. It is found that the Bacteriorhodopsin protein tends to exhibit with strong spatial correlation in the presence of external electric field compared to in absence of the electric field. Long-range correlation in the morphological feature may be associated to the enhancement of aggregation process of Bacteriorhodopsin protein in the presence of electric field, thereby inhibiting the formation of the so-called 'coffee-ring' effect. As such, the observations discussed in this work suggest some amount of control of surface uniformity when forming layers.

  11. Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Shao-Kai Lu

    2014-03-01

    Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

  12. Kinetics Study of Silver Electrocrystallization on (3-mercaptopropyl)trimethoxysilane-grafted Indium Tin Oxide Plastic Substrate

    International Nuclear Information System (INIS)

    Hau, Nga Yu; Chang, Ya-Huei; Feng, Shien-Ping

    2015-01-01

    Highlights: • The larger charge transfer coefficient supports that MPS promotes electrodeposition. • ACV shows that electron-transfer rate enhanced by 2.5 times after MPS treatment. • The fitting of CA defined the Ag nucleation mode on blank and MPS-grafted ITO-PEN. • MPS treatment changed the nucleation mode from 2-step to a single step one. - Abstract: 3-mercaptopropyl-trimethoxysilane (MPS) self-assembled monolayer (SAM) has been demonstrated as effective promoters to enable direct electroplated metallization on indium tin oxide (ITO) plastic substrate. In this paper, the detail kinetics in Ag electrocrystallization on MPS-grafted ITO-PEN is reported. Contact angle measurement provides evidence of bridging-link effect between the sulfur head groups of MPS and the Ag + ions in the electrolyte. Electrochemical techniques including cyclic voltammetry and Tafel plot were used to investigate the redox kinetics. Quantitative evaluation was conducted by alternating current voltammetry to determine the rate constant of electron transfer. The chronoamperograms and their fitting results suggest a combined model with two-dimensional/three-dimensional nucleation transition and Shariker-Hills model for electroplated Ag on blank ITO-PEN and MPS-grafted ITO-PEN respectively

  13. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Praig, Vera G.; Szunerits, Sabine [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Piret, Gaelle; Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Manesse, Mael [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Castel, Xavier [Institut d' Electronique et de Telecommunications de Rennes (IETR), UMR CNRS 6164, 18 rue H. Wallon, BP 406, 22004 Saint-Brieuc Cedex 1 (France)

    2008-11-15

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 . Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with {lambda}{sub max}=675{+-} 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices. (author)

  14. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    International Nuclear Information System (INIS)

    Praig, Vera G.; Piret, Gaelle; Manesse, Mael; Castel, Xavier; Boukherroub, Rabah; Szunerits, Sabine

    2008-01-01

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 deg. Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with λ max = 675 ± 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices

  15. Thermal-driven attachment of gold nanoparticles prepared with ascorbic acid onto indium tin oxide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Md. Abdul; Oyama, Munetaka, E-mail: oyama.munetaka.4m@kyoto-u.ac.jp [Kyoto University, Department of Material Chemistry, Graduate School of Engineering (Japan)

    2013-05-15

    Thermal-driven attachment of gold nanoparticles (AuNPs), of which size was less than 50 nm, onto the surfaces of indium tin oxide (ITO) is reported as a new phenomenon. This was permitted by preparing AuNPs via the reduction of hydrogen tetrachloroaurate (HAuCl{sub 4}) with ascorbic acid (AA). While the AuNPs prepared via the AA reduction sparsely attached on the surface of ITO even at room temperature, a heat-up treatment at ca. 75 Degree-Sign C caused denser attachment of AuNPs on ITO surfaces. The attached density and the homogeneity after the thermal treatment were better than those of AuNP/ITO prepared using 3-aminopropyl-trimethoxysilane linker molecules. The denser attachment was observed similarly both by the immersion of ITO samples after the preparations of AuNPs by AA and by the in situ preparation of AuNPs with AA together with ITO samples. Thus, it is considered that the thermal-driven attachment of AuNPs would occur after the formation of AuNPs in the aqueous solutions, not via the growth of AuNPs on ITO surfaces. The preparation of AuNPs with AA would be a key for the thermal-driven attachment because the same attachments were not observed for AuNPs prepared with citrate ions or commercially available tannic acid-capped AuNPs.

  16. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  17. Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

    Science.gov (United States)

    Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

    2018-02-01

    Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

  18. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  19. Visible spectroelectrochemical characterization of Geobacter sulfurreducens biofilms on optically transparent indium tin oxide electrode

    International Nuclear Information System (INIS)

    Jain, Anand; Gazzola, Giulio; Panzera, Aurora; Zanoni, Michele; Marsili, Enrico

    2011-01-01

    We report visible spectroelectrochemical (SEC) characterization of cytochrome c 552 (cyt c 552 ) in viable Geobacter sulfurreducens biofilms on tin-doped indium oxide (ITO) electrodes poised at 0.24 V vs. SHE. G. sulfurreducens biofilms were grown in minimal medium with acetate as electron donor (turnover conditions), followed by 24 h incubation in electron donor-depleted medium (non-turnover conditions). The electronic absorption spectra of G. sulfurreducens biofilms showed the lowest energy absorption band in the reduced state at 552 nm, which indicated excess of cyt c 552 in the biofilm. The spectra under non-turnover conditions displayed gradual reduction of the cyt c 552 , following the step-wise decrease of electrode potential from 0.0 V to −0.6 V vs. standard calomel electrode (SCE). The spectral changes were fully reversible in both positive and negative direction of the scan potential, with average midpoint potential value of −0.42 V vs. SCE. Confocal microscopy analysis revealed that the thickness of biofilms under turnover conditions and non-turnover conditions was approximately 35 and 3.5 μm, respectively. This is the first study to observe the reversible redox conversion of cyt c 552 in viable G. sulfurreducens biofilms.

  20. Aligned carbon nanotube webs as a replacement for indium tin oxide in organic solar cells

    International Nuclear Information System (INIS)

    Sears, Kallista; Fanchini, Giovanni; Watkins, Scott E.; Huynh, Chi P.; Hawkins, Stephen C.

    2013-01-01

    Bulk heterojunction solar cells were fabricated with flexible webs of aligned multiwalled carbon nanotubes (MWNTs). These webs were drawn from a forest of MWNTs and placed directly onto the device substrate to form the hole collecting electrode. Devices were fabricated on glass substrates with one or two MWNT web layers to study the trade-off between transparency and resistivity on device performance. Devices with two web layers performed better with a fill factor of 0.47 and a device power conversion efficiency of 1.66% due to their higher conductivity. Flexible devices on Mylar substrates were also demonstrated with an efficiency of 1.2% indicating the potential of MWNT webs as a flexible alternative to the more conventional indium tin oxide. - Highlights: ► Drawable carbon nanotube webs were used as an anode in bulk heterojunction cells. ► One and two layers of carbon nanotube webs were compared. ► A thick active layer of ∼ 530 nm was needed to avoid shunting through nanotubes. ► Two layers of web gave the better efficiency of 1.6%. ► Flexible devices on Mylar were demonstrated with 1.2% efficiency

  1. Aligned carbon nanotube webs as a replacement for indium tin oxide in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sears, Kallista, E-mail: kallista.sears@csiro.au; Fanchini, Giovanni; Watkins, Scott E.; Huynh, Chi P.; Hawkins, Stephen C.

    2013-03-01

    Bulk heterojunction solar cells were fabricated with flexible webs of aligned multiwalled carbon nanotubes (MWNTs). These webs were drawn from a forest of MWNTs and placed directly onto the device substrate to form the hole collecting electrode. Devices were fabricated on glass substrates with one or two MWNT web layers to study the trade-off between transparency and resistivity on device performance. Devices with two web layers performed better with a fill factor of 0.47 and a device power conversion efficiency of 1.66% due to their higher conductivity. Flexible devices on Mylar substrates were also demonstrated with an efficiency of 1.2% indicating the potential of MWNT webs as a flexible alternative to the more conventional indium tin oxide. - Highlights: ► Drawable carbon nanotube webs were used as an anode in bulk heterojunction cells. ► One and two layers of carbon nanotube webs were compared. ► A thick active layer of ∼ 530 nm was needed to avoid shunting through nanotubes. ► Two layers of web gave the better efficiency of 1.6%. ► Flexible devices on Mylar were demonstrated with 1.2% efficiency.

  2. Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Nam; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of); Choi, Hyun Chul [Chonnam National University, Gwangju (Korea, Republic of)

    2012-01-15

    In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn- O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm{sup -1}.

  3. Positron beam study of indium tin oxide films on GaN

    International Nuclear Information System (INIS)

    Cheung, C K; Wang, R X; Beling, C D; Djurisic, A B; Fung, S

    2007-01-01

    Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 deg. C without oxygen and at 200 deg. C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 x 10 -3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy

  4. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    International Nuclear Information System (INIS)

    Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

    2005-01-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

  5. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  6. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  7. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

    Science.gov (United States)

    Zhong, Z Y; Jiang, Y D

    2006-10-15

    In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

  8. Preparation and optical properties of indium tin oxide/epoxy nanocomposites with polyglycidyl methacrylate grafted nanoparticles.

    Science.gov (United States)

    Tao, Peng; Viswanath, Anand; Schadler, Linda S; Benicewicz, Brian C; Siegel, Richard W

    2011-09-01

    Visibly highly transparent indium tin oxide (ITO)/epoxy nanocomposites were prepared by dispersing polyglycidyl methacrylate (PGMA) grafted ITO nanoparticles into a commercial epoxy resin. The oleic acid stabilized, highly crystalline, and near monodisperse ITO nanoparticles were synthesized via a nonaqueous synthetic route with multigram batch quantities. An azido-phosphate ligand was synthesized and used to exchange with oleic acid on the ITO surface. The azide terminal group allows for the grafting of epoxy resin compatible PGMA polymer chains via Cu(I) catalyzed alkyne-azide "click" chemistry. Transmission electron microscopy (TEM) observation shows that PGMA grafted ITO particles were homogeneously dispersed within the epoxy matrix. Optical properties of ITO/epoxy nanocomposites with different ITO concentrations were studied with an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrometer. All the ITO/epoxy nanocomposites show more than 90% optical transparency in the visible light range and absorption of UV light from 300 to 400 nm. In the near-infrared region, ITO/epoxy nanocomposites demonstrate low transmittance and the infrared (IR) transmission cutoff wavelength of the composites shifts toward the lower wavelength with increased ITO concentration. The ITO/epoxy nanocomposites were applied onto both glass and plastic substrates as visibly transparent and UV/IR opaque optical coatings.

  9. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  10. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  11. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Directory of Open Access Journals (Sweden)

    Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

    2011-01-01

    Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  12. Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

    2016-01-29

    Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

  13. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi

    2008-01-01

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer

  14. Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

    International Nuclear Information System (INIS)

    Gregory, Otto J.; You, Tao; Crisman, Everett E.

    2005-01-01

    Ceramic strain sensors based on reactively sputtered indium tin oxide (ITO) thin films doped with aluminum are being considered to improve the high-temperature stability and response. Ceramic strain sensors were developed to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500 deg C. Earlier studies using electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and aluminum oxide increase the stability of ITO at elevated temperature. The resulting ESCA depth files showed the presence of two new indium-indium peaks at 448.85 and 456.40 eV, corresponding to the indium 3d5 and 3d3 binding energies. These binding energies are significantly higher than those associated with stoichiometric indium oxide. Based on these studies, a combinatorial chemistry approach was used to screen large numbers of possible concentrations to optimize the stability and performance of Al-doped ceramic strain sensors. Scanning electron microscopy was used to analyze the combinatorial libraries in which varying amounts of aluminum were incorporated into ITO films formed by cosputtering from multiple targets. Electrical stability and piezoresistive response of these films were compared to undoped ITO films over the same temperature range

  15. Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

    Science.gov (United States)

    Blackburn, L. B.; Starke, E. A., Jr.

    1989-01-01

    Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

  16. Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2013-08-31

    We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

  17. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    International Nuclear Information System (INIS)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-01-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10 −5 Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10 −3 Ω −1 , comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs

  18. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

    International Nuclear Information System (INIS)

    Han, H.; Adams, Daniel; Mayer, J.W.; Alford, T.L.

    2005-01-01

    Indium tin oxide (ITO) thin films, on polyethylene napthalate (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6x10 18 -2.48x10 18 atoms/cm 2 , the resistivity varied from 0.38x10 -2 to 1.86x10 -2 Ω cm. Typical resistivities were about ∼10 -3 Ω cm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ∼85% were obtained for the ITO thin films. Our results revealed that substrate roughness were translated onto the deposited ITO thin layers. The ITO surface roughness influences both the optical and electrical properties of the thin films. For a 125 μm PEN substrate the roughness is 8.4 nm, whereas it is 3.2 nm for 200 μm substrate thicknesses. The optical band gap is about 3.15 eV for all ITO film and is influenced by the polymer substrate. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films

  19. Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices

    International Nuclear Information System (INIS)

    Baek, Kyunghyun; Jang, Kyungsoo; Lee, Youn-Jung; Ryu, Kyungyul; Choi, Woojin; Kim, Doyoung; Yi, Junsin

    2013-01-01

    We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent–flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10 −3 Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 × 10 −4 Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film. - Highlights: ► Transparent flexible electrode fabricated on glass substrate. ► Electrode fabricated using vertically-patterned design on glass substrate. ► Optimization of the vertical patterns ► Application of the vertically-patterned electrode in transparent–flexible electronics

  20. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    International Nuclear Information System (INIS)

    Xiao, Yu; Gao, Fangyuan; Dong, Guobo; Guo, Tingting; Liu, Qirong; Ye, Di; Diao, Xungang

    2014-01-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10 −4 Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n −0.127 , which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested

  1. Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

    International Nuclear Information System (INIS)

    Yeadon, A.D.; Wakeham, S.J.; Brown, H.L.; Thwaites, M.J.; Whiting, M.J.; Baker, M.A.

    2011-01-01

    Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 −4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10 −4 Ω cm, 3.7 × 10 −4 Ω cm and 3.5 × 10 −4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10 −4 and 4.5 × 10 −4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

  2. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Yu [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Gao, Fangyuan, E-mail: gaofangyuan@buaa.edu.cn [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Dong, Guobo; Guo, Tingting; Liu, Qirong [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Ye, Di [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100191 (China); Diao, Xungang [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2014-04-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10{sup −4} Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n{sup −0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested.

  3. An oxidation-resistant indium tin oxide catalyst support for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Chhina, H.; Campbell, S. [Ballard Power Systems Inc., 9000 Glenlyon Parkway, Burnaby, BC V5J 5J8 (Canada); Kesler, O. [Department of Mechanical Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 (Canada)

    2006-10-27

    The oxidation of carbon catalyst supports causes degradation in catalyst performance in proton exchange membrane fuel cells (PEMFCs). Indium tin oxide (ITO) is considered as a candidate for an alternative catalyst support. The electrochemical stability of ITO was studied by use of a rotating disk electrode (RDE). Oxidation cycles between +0.6 and +1.8V were applied to ITO supporting a Pt catalyst. Cyclic voltammograms (CVs) both before and after the oxidation cycles were obtained for Pt on ITO, Hispec 4000 (a commercially available catalyst), and 40wt.% Pt dispersed in-house on Vulcan XC-72R. Pt on ITO showed significantly better electrochemical stability, as determined by the relative change in electrochemically active surface area after cycling. Hydrogen desorption peaks in the CVs existed even after 100 cycles from 0.6 to 1.8V for Pt on ITO. On the other hand, most of the active surface area was lost after 100 cycles of the Hispec 4000 catalyst. The 40wt.% Pt on Vulcan made in-house also lost most of its active area after only 50 cycles. Pt on ITO was significantly more electrochemically stable than both Hispec 4000 and Pt on Vulcan XC-72R. In this study, it was found that the Pt on ITO had average crystallite sizes of 13nm for Pt and 38nm for ITO. Pt on ITO showed extremely high thermal stability, with only {approx}1wt.% loss of material for ITO versus {approx}57wt.% for Hispec 4000 on heating to 1000{sup o}C. The TEM data show Pt clusters dispersed on small crystalline ITO particles. The SEM data show octahedral shaped ITO particles supporting Pt. (author)

  4. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  5. Electron transport within transparent assemblies of tin-doped indium oxide colloidal nanocrystals

    Science.gov (United States)

    Grisolia, J.; Decorde, N.; Gauvin, M.; Sangeetha, N. M.; Viallet, B.; Ressier, L.

    2015-08-01

    Stripe-like compact assemblies of tin-doped indium oxide (ITO) colloidal nanocrystals (NCs) are fabricated by stop-and-go convective self-assembly (CSA). Systematic evaluation of the electron transport mechanisms in these systems is carried out by varying the length of carboxylate ligands protecting the NCs: butanoate (C4), octanoate (C8) and oleate (C18). The interparticle edge-to-edge distance L0, along with a number of carbon atoms in the alkyl chain of the coating ligand, are deduced from small-angle x-ray scattering (SAXS) measurements and exhibit a linear relationship with a slope of 0.11 nm per carbon pair unit. Temperature-dependent resistance characteristics are analyzed using several electron transport models: Efros-Shklovskii variable range hopping (ES-VRH), inelastic cotunneling (IC), regular island array and percolation. The analysis indicated that the first two models (ES-VRH and IC) fail to explain the observed behavior, and that only simple activated transport takes place in these systems under the experimental conditions studied (T = 300 K to 77 K). Related transport parameters were then extracted using the regular island array and percolation models. The effective tunneling decay constant βeff of the ligands and the Coulomb charging energy EC are found to be around 5.5 nm-1 and 25 meV, respectively, irrespective of ligand lengths. The theoretical tunneling decay constant β calculated using the percolation model is in the range 9 nm-1. Electromechanical tests on the ITO nanoparticle assemblies indicate that their sensitivities are as high as ˜30 and remain the same regardless of ligand lengths, which is in agreement with the constant effective βeff extracted from regular island array and percolation models.

  6. Real-time monitoring of indium tin oxide laser ablation in liquid crystal display patterning

    International Nuclear Information System (INIS)

    Hong, M.H.; Lu, Y.F.; Meng, M.; Low, T.S.

    1998-01-01

    Audible acoustic wave detection is applied to investigate KrF excimer laser ablation of Indium Tin Oxide (ITO) thin film layer for Liquid Crystal Display (LCD) patterning. It is found that there is no acoustic wave generation if laser fluence is lower than ITO ablation threshold. For laser fluence higher than the threshold, audible acoustic wave will be detected due to shock wave generation during ITO laser ablation. The amplitude of the acoustic wave is closely related to the laser ablation rate. With more laser pulse applied, the amplitude is dropped to zero because the ITO layer is completely removed. However, if laser fluence is increased higher than ablation threshold for glass substrate, the amplitude is also dropped with pulse number but not to zero. It is due to laser ablation of ITO layer and glass substrate at the same time. Since the thickness of ITO layer is in a scale of 100 nm, laser interaction with glass substrate will happen even at the first pulse of higher laser fluence irradiation. Laser ablation induced ITO plasma emission spectrum in visible light region is analyzed by an Optical Multi-channel Analyzer (OMA). Specific spectral lines are In I (325.8, 410.2 and 451.1 nm) and In II 591.1 nm. Spectral intensities of 410.2 and 451.1 nm lines are selected to characterize the evolution of ITO plasma intensity with laser fluence and pulse number. It is found that the spectral intensities are reduced to zero with laser pulse number. It is also found that spectral lines other than ITO plasma will appear for laser fluence higher than ablation threshold for glass substrate. Threshold fluences for glass and ITO ablation are estimated for setting up a parameter window to control LCD patterning in real-time

  7. Surface properties of indium tin oxide treated by Cl2 inductively coupled plasma

    International Nuclear Information System (INIS)

    He, Kongduo; Yang, Xilu; Yan, Hang; Gong, Junyi; Zhong, Shaofeng; Ou, Qiongrong; Liang, Rongqing

    2014-01-01

    Graphical abstract: - Highlights: • The work function of chlorinated ITO increases initially by up to 1 eV. • The chlorinated ITO keeps an increment of work function of 0.3 eV after 100 days. • The WF decrease curves can be fitted with double exponential functions. • The desorption of unstable Cl in the surface leads to the rapid decrease of WF. • The core levels of In 3d5 and Sn 3d5 and O 1s shift toward higher binding energies. - Abstract: The effects of Cl 2 inductively coupled plasma (ICP) treatment on the time dependence of work function (WF) and surface properties of indium tin oxide (ITO) were investigated. Kelvin probe (KP) measurements show that the WF after Cl 2 ICP treatment is close to 5.9 eV. The WF decrease curve of Cl 2 plasma treated ITO is fitted with double exponential functions with an adjusted R-square of 0.99. The mechanism under the decrease process is discussed by X-ray photoelectron spectroscopy (XPS). The ITO WF decrease after Cl 2 ICP treatment performs much better than that after O 2 ICP treatment and the chlorinated ITO keeps a WF increment of 0.3 eV compared with that without plasma treatment after 100 days. Other properties of chlorinated ITO surface such as morphology and transmittance change slightly. The results are significant for the understanding of degradation of Cl 2 plasma treated ITO and the fabrication of organic semiconductor devices

  8. Surface properties of indium tin oxide treated by Cl{sub 2} inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    He, Kongduo; Yang, Xilu; Yan, Hang; Gong, Junyi; Zhong, Shaofeng [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

    2014-10-15

    Graphical abstract: - Highlights: • The work function of chlorinated ITO increases initially by up to 1 eV. • The chlorinated ITO keeps an increment of work function of 0.3 eV after 100 days. • The WF decrease curves can be fitted with double exponential functions. • The desorption of unstable Cl in the surface leads to the rapid decrease of WF. • The core levels of In 3d5 and Sn 3d5 and O 1s shift toward higher binding energies. - Abstract: The effects of Cl{sub 2} inductively coupled plasma (ICP) treatment on the time dependence of work function (WF) and surface properties of indium tin oxide (ITO) were investigated. Kelvin probe (KP) measurements show that the WF after Cl{sub 2} ICP treatment is close to 5.9 eV. The WF decrease curve of Cl{sub 2} plasma treated ITO is fitted with double exponential functions with an adjusted R-square of 0.99. The mechanism under the decrease process is discussed by X-ray photoelectron spectroscopy (XPS). The ITO WF decrease after Cl{sub 2} ICP treatment performs much better than that after O{sub 2} ICP treatment and the chlorinated ITO keeps a WF increment of 0.3 eV compared with that without plasma treatment after 100 days. Other properties of chlorinated ITO surface such as morphology and transmittance change slightly. The results are significant for the understanding of degradation of Cl{sub 2} plasma treated ITO and the fabrication of organic semiconductor devices.

  9. Modifying the Casimir force between indium tin oxide film and Au sphere

    Science.gov (United States)

    Banishev, A. A.; Chang, C.-C.; Castillo-Garza, R.; Klimchitskaya, G. L.; Mostepanenko, V. M.; Mohideen, U.

    2012-01-01

    We present complete results of the experiment on measuring the Casimir force between an Au-coated sphere and an untreated or, alternatively, UV-treated indium tin oxide (ITO) film deposited on a quartz substrate. Measurements were performed using an atomic force microscope in a high vacuum chamber. The measurement system was calibrated electrostatically. Special analysis of the systematic deviations is performed, and respective corrections in the calibration parameters are introduced. The corrected parameters are free from anomalies discussed in the literature. The experimental data for the Casimir force from two measurement sets for both untreated and UV-treated samples are presented. The random, systematic, and total experimental errors are determined at a 95% confidence level. It is demonstrated that the UV treatment of an ITO plate results in a significant decrease in the magnitude of the Casimir force (from 21% to 35% depending on separation). However, ellipsometry measurements of the imaginary parts of dielectric permittivities of the untreated and UV-treated samples did not reveal any significant differences. The experimental data are compared with computations in the framework of the Lifshitz theory. It is found that the data for the untreated sample are in a very good agreement with theoretical results taking into account the free charge carriers in an ITO film. For the UV-treated sample the data exclude the theoretical results obtained with account of free charge carriers. These data are in very good agreement with computations disregarding the contribution of free carriers in the dielectric permittivity. According to the hypothetical explanation provided, this is caused by the phase transition of the ITO film from metallic to dielectric state caused by the UV treatment. Possible applications of the discovered phenomenon in nanotechnology are discussed.

  10. Effective Electrochemistry of Human Sulfite Oxidase Immobilized on Quantum-Dots-Modified Indium Tin Oxide Electrode.

    Science.gov (United States)

    Zeng, Ting; Leimkühler, Silke; Koetz, Joachim; Wollenberger, Ulla

    2015-09-30

    The bioelectrocatalytic sulfite oxidation by human sulfite oxidase (hSO) on indium tin oxide (ITO) is reported, which is facilitated by functionalizing of the electrode surface with polyethylenimine (PEI)-entrapped CdS nanoparticles and enzyme. hSO was assembled onto the electrode with a high surface loading of electroactive enzyme. In the presence of sulfite but without additional mediators, a high bioelectrocatalytic current was generated. Reference experiments with only PEI showed direct electron transfer and catalytic activity of hSO, but these were less pronounced. The application of the polyelectrolyte-entrapped quantum dots (QDs) on ITO electrodes provides a compatible surface for enzyme binding with promotion of electron transfer. Variations of the buffer solution conditions, e.g., ionic strength, pH, viscosity, and the effect of oxygen, were studied in order to understand intramolecular and heterogeneous electron transfer from hSO to the electrode. The results are consistent with a model derived for the enzyme by using flash photolysis in solution and spectroelectrochemistry and molecular dynamic simulations of hSO on monolayer-modified gold electrodes. Moreover, for the first time a photoelectrochemical electrode involving immobilized hSO is demonstrated where photoexcitation of the CdS/hSO-modified electrode lead to an enhanced generation of bioelectrocatalytic currents upon sulfite addition. Oxidation starts already at the redox potential of the electron transfer domain of hSO and is greatly increased by application of a small overpotential to the CdS/hSO-modified ITO.

  11. Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide

    International Nuclear Information System (INIS)

    Ashur, Idan; Jones, Anne K.

    2012-01-01

    Highlights: ► Immobilization of azurin at indium tin oxide causes modification of the native redox properties. ► Azurin was immobilized at alkylsilane self-assembled monolayer on indium tin oxide. ► Native, solution redox properties are retained for the immobilized protein on the SAM. ► Technique should be widely applicable to other redox proteins. - Abstract: Indium tin oxide (ITO) is a promising material for developing spectroelectrochemical methods due to its combination of excellent transparency in the visible region and high conductivity over a broad range of potential. However, relatively few examples of immobilization of redox proteins at ITO with retention of the ability to transfer electrons with the underlying material with native characteristics have been reported. In this work, we utilize an alkylsilane functionalized ITO surface as a biocompatible interface for immobilization of the blue copper protein azurin. Adsorption of azurin at ITO as well as ITO coated with self-assembled monolayers of (3-mercaptopropyl)trimethoxysilane (MPTMS) and n-decyltrimethoxysilane (DTMS) was achieved, and immobilized protein probed using protein film electrochemistry. The native redox properties of the protein were perturbed by adsorption directly to ITO or to the MPTMS layer on an ITO surface. However, azurin adsorbed at a DTMS covered ITO surface retained native electrochemical properties (E 1/2 = 122 ± 5 mV vs. Ag/AgCl) and could exchange electrons directly with the underlying ITO layer without need for an intervening chemical mediator. These results open new opportunities for immobilizing functional redox proteins at ITO and developing spectroelectrochemical methods for investigating them.

  12. Surface Modification of Indium Tin Oxide Nanoparticles to Improve Its Distribution in Epoxy-Silica Polymer Matrix

    Directory of Open Access Journals (Sweden)

    Mostafa Jafari

    2014-10-01

    Full Text Available A semiconducting nanoparticle indium tin oxide (ITO was modified with silane groups and for this purpose trimethoxysilane (TMOS precursor was used under specific experimental conditions for surface modification of ITO nanoparticles. It is found that the modification of ITO nanoparticles increases the interactions between the filler and the matrix and subsequently improves the distibution of indium tin oxide nanoparticles in the polymer matrix. The epoxisilica polymer matrix was produced using trimethoxysilane and 3-glycidyloxypropyl trimethoxysilane precursors and ethylenediamine (EDA as curing agent at low temperature by sol-gel process. The sol-gel process was very useful due to its easily controllable process, solution concentration and homogeneity without using expensive and complicated equipments in comparison with other methods. Then, Fourier transform infrared (FTIR spectroscopy was employed to study the formation of Si-O-Si and Si-OH groups on ITO nanoparticles. X-Ray diffraction (XRD technique and thermal gravimetric analysis (TGA were employed to investigate the modification and weight loss of the modified ITO, respectively, as an indication of the presence of organic groups on these nanoparticles. The separation analyzer tests were performed to check the stability of the nanoparticles suspension and it revealed that due to better interaction of nanoparticles with the polymer matrix the stability of modified ITO suspention is higher than the unmodified sample. The morphology and particle distribution were determined by scanning electron microscopy (SEM. It was found that the distibution of modified indium tin oxide in epoxy-silica polymer matrix was improved in comparison with pure ITO.

  13. Dye-sensitized solar cell architecture based on indium-tin oxide nanowires coated with titanium dioxide

    International Nuclear Information System (INIS)

    Joanni, Ednan; Savu, Raluca; Sousa Goes, Marcio de; Bueno, Paulo Roberto; Nei de Freitas, Jilian; Nogueira, Ana Flavia; Longo, Elson; Varela, Jose Arana

    2007-01-01

    A new architecture for dye-sensitized solar cells is employed, based on a nanostructured transparent conducting oxide protruding from the substrate, covered with a separate active oxide layer. The objective is to decrease electron-hole recombination. The concept was tested by growing branched indium-tin oxide nanowires on glass using pulsed laser deposition followed by deposition of a sputtered titanium dioxide layer covering the wires. The separation of charge generation and charge transport functions opens many possibilities for dye-sensitized solar cell optimization

  14. Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

    Science.gov (United States)

    Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

    2018-05-01

    A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

  15. All solution roll-to-roll processed polymer solar cells free from indium-tin-oxide and vacuum coating steps

    DEFF Research Database (Denmark)

    Krebs, Frederik C

    2009-01-01

    of a bottom electrode comprising silver nanoparticles on a 130 micron thick polyethyleneternaphthalate (PEN) substrate. Subsequently an electron transporting layer of zinc oxide nanoparticles was applied from solution followed by an active layer of P3HT-PCBM and a hole transporting layer of PEDOT......, 3 and 8 stripes. All five layers in the device were processed from solution in air and no vacuum steps were employed. An additional advantage is that the use of indium-tin-oxide (ITO) is avoided in this process. The devices were tested under simulated sunlight (1000 W m−2, AM1.5G) and gave a typical...

  16. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  17. Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

    International Nuclear Information System (INIS)

    Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

    2011-01-01

    A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

  18. Electrical and optical properties of thin indium tin oxide films produced by pulsed laser ablation in oxygen or rare gas atmospheres

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen; Nordskov, A.

    1999-01-01

    Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate temperatu......Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate...

  19. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei, E-mail: naomikhor@um.edu.my

    2015-01-15

    Graphical abstract: - Highlights: • The incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. • The resistance to non-specific protein adsorptions of BSA–FITC and RBITC–Cyt c were determined by confocal laser scanning microscopy. • The antifouling interface allows detection of target analytes in highly complicated biological matrices. - Abstract: Biosensing interfaces consisting of linker molecules (COOH or NH{sub 2}) and charged, antifouling moieties ((-SO{sup 3−} and N{sup +}(Me){sub 3}) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA–FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC–Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study

  20. Indium tin oxide thin film strain gages for use at elevated temperatures

    Science.gov (United States)

    Luo, Qing

    A robust ceramic thin film strain gage based on indium-tin-oxide (ITO) has been developed for static and dynamic strain measurements in advanced propulsion systems at temperatures up to 1400°C. These thin film sensors are ideally suited for in-situ strain measurement in harsh environments such as those encountered in the hot sections of gas turbine engines. A novel self-compensation scheme was developed using thin film platinum resistors placed in series with the active strain element (ITO) to minimize the thermal effect of strain or apparent strain. A mathematical model as well as design rules were developed for the self-compensated circuitry using this approach and close agreement between the model and actual static strain results has been achieved. High frequency dynamic strain tests were performed at temperatures up to 500°C and at frequencies up to 2000Hz to simulate conditions that would be encountered during engine vibration fatigue. The results indicated that the sensors could survive extreme test conditions while maintaining sensitivity. A reversible change in sign of the piezoresistive response from -G to +G was observed in the vicinity of 950°C, suggesting that the change carrier responsible for conduction in the ITO gage had been converted from a net "n-carrier" to a net "p-carrier" semiconductor. Electron spectroscopy for chemical analysis (ESCA) of the ITO films suggested they experienced an interfacial reaction with the Al2O3 substrate at 1400°C. It is likely that oxygen uptake from the substrate is responsible for stabilizing the ITO films to elevated temperatures through the interfacial reaction. Thermo gravimetric analysis of ITO films on alumina at elevated temperatures showed no sublimation of ITO films at temperature up to 1400°C. The surface morphology of ITO films heated to 800, 1200 and 1400°C were also evaluated by atomic force microscopy (AFM). A linear current-voltage (I--V) characteristic indicated that the contact interface

  1. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    International Nuclear Information System (INIS)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei

    2015-01-01

    Graphical abstract: - Highlights: • The incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. • The resistance to non-specific protein adsorptions of BSA–FITC and RBITC–Cyt c were determined by confocal laser scanning microscopy. • The antifouling interface allows detection of target analytes in highly complicated biological matrices. - Abstract: Biosensing interfaces consisting of linker molecules (COOH or NH 2 ) and charged, antifouling moieties ((-SO 3− and N + (Me) 3 ) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA–FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC–Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study, we used 2

  2. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    Science.gov (United States)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei

    2015-01-01

    Biosensing interfaces consisting of linker molecules (COOH or NH2) and charged, antifouling moieties ((sbnd SO3- and N+(Me)3) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA-FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC-Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study, we used 2-[2-(2-methoxyethoxy) ethoxy]acetic acid (OEG) as a standard control because of its prominent antifouling properties. Surface compositions of combinations 1 and 2 were characterized using X-ray photoelectron spectroscopy (XPS). Field-emission scanning electron microscopy (FE-SEM) was used to characterize the morphology of the grafted films to confirm the even distribution between linker and antifouling molecules grafted onto the ITO surfaces

  3. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    International Nuclear Information System (INIS)

    Kim, Sukwon; Kim, Tae Geun

    2015-01-01

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  4. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2015-09-30

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  5. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  6. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  7. Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

    Science.gov (United States)

    Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

    2017-10-01

    Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

  8. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  9. Sintered indium-tin oxide particles induce pro-inflammatory responses in vitro, in part through inflammasome activation.

    Directory of Open Access Journals (Sweden)

    Melissa A Badding

    Full Text Available Indium-tin oxide (ITO is used to make transparent conductive coatings for touch-screen and liquid crystal display electronics. As the demand for consumer electronics continues to increase, so does the concern for occupational exposures to particles containing these potentially toxic metal oxides. Indium-containing particles have been shown to be cytotoxic in cultured cells and pro-inflammatory in pulmonary animal models. In humans, pulmonary alveolar proteinosis and fibrotic interstitial lung disease have been observed in ITO facility workers. However, which ITO production materials may be the most toxic to workers and how they initiate pulmonary inflammation remain poorly understood. Here we examined four different particle samples collected from an ITO production facility for their ability to induce pro-inflammatory responses in vitro. Tin oxide, sintered ITO (SITO, and ventilation dust particles activated nuclear factor kappa B (NFκB within 3 h of treatment. However, only SITO induced robust cytokine production (IL-1β, IL-6, TNFα, and IL-8 within 24 h in both RAW 264.7 mouse macrophages and BEAS-2B human bronchial epithelial cells. Our lab and others have previously demonstrated SITO-induced cytotoxicity as well. These findings suggest that SITO particles activate the NLRP3 inflammasome, which has been implicated in several immune-mediated diseases via its ability to induce IL-1β release and cause subsequent cell death. Inflammasome activation by SITO was confirmed, but it required the presence of endotoxin. Further, a phagocytosis assay revealed that pre-uptake of SITO or ventilation dust impaired proper macrophage phagocytosis of E. coli. Our results suggest that adverse inflammatory responses to SITO particles by both macrophage and epithelial cells may initiate and propagate indium lung disease. These findings will provide a better understanding of the molecular mechanisms behind an emerging occupational health issue.

  10. Elastic properties of zinc, cadmium, bismuth, thallium, tin, lead and their binary alloys with indium

    International Nuclear Information System (INIS)

    Magomedov, A.M.

    1986-01-01

    Rates of propagation of longitudinal and transverse acoustic waves in samples as well as density of Tl, Pb, Sn, Bi, Cd, Zn and their binary alloys with indium are determined. The results obtained are used for calculation of elasticity constants of these materials. It is stated that concentration dependences of elasticity constants for indium alloys have non-linear character; negative deflection from the additive line is observed

  11. Tin

    Science.gov (United States)

    Kamilli, Robert J.; Kimball, Bryn E.; Carlin, James F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Tin (Sn) is one of the first metals to be used by humans. Almost without exception, tin is used as an alloy. Because of its hardening effect on copper, tin was used in bronze implements as early as 3500 B.C. The major uses of tin today are for cans and containers, construction materials, transportation materials, and solder. The predominant ore mineral of tin, by far, is cassiterite (SnO2).In 2015, the world’s total estimated mine production of tin was 289,000 metric tons of contained tin. Total world reserves at the end of 2016 were estimated to be 4,700,000 metric tons. China held about 24 percent of the world’s tin reserves and accounted for 38 percent of the world’s 2015 production of tin.The proportion of scrap used in tin production is between 10 and 25 percent. Unlike many metals, tin recycling is relatively efficient, and the fraction of tin in discarded products that get recycled is greater than 50 percent.Only about 20 percent of the world’s identified tin resources occur as primary hydrothermal hard-rock veins, or lodes. These lodes contain predominantly high-temperature minerals and almost invariably occur in close association with silicic, peraluminous granites. About 80 percent of the world’s identified tin resources occur as unconsolidated secondary or placer deposits in riverbeds and valleys or on the sea floor. The largest concentration of both onshore and offshore placers is in the extensive tin belt of Southeast Asia, which stretches from China in the north, through Thailand, Burma (also referred to as Myanmar), and Malaysia, to the islands of Indonesia in the south. Furthermore, tin placers are almost always found closely allied to the granites from which they originate. Other countries with significant tin resources are Australia, Bolivia, and Brazil.Most hydrothermal tin deposits belong to what can be thought of as a superclass of porphyry-greisen deposits. The hydrothermal tin deposits are all characterized by a close spatial

  12. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel

    2014-06-11

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict such changes as an alternative to fracture mechanics formulations. Our predictions are obtained by assuming that there are no flaws at the onset of loading as opposed to the assumptions of fracture mechanics approaches. We calibrate the crack onset strain and the damage model based on experimental data reported in the literature. We predict crack density and changes in electrical resistance as a function of the damage induced in the films. We implement our model in the commercial finite element software ABAQUS using a user subroutine UMAT. We obtain fair to good agreement with experiments. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  13. A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

    International Nuclear Information System (INIS)

    Keshmiri, S.H.; Roknabadi, M.R.

    1999-01-01

    Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

  14. Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori

    2005-01-01

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer

  15. Surface modification of indium tin oxide films by amino ion implantation for the attachment of multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Jiao Jiao; Liu Chenyao; Chen Qunxia; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    Amino ion implantation was carried out at the energy of 80 keV with fluence of 5 x 10 15 ions cm -2 for indium tin oxide film (ITO) coated glass, and the existence of amino group on the ITO surface was verified by X-ray photoelectron spectroscopy analysis and Fourier transform infrared spectra. Scanning electron microscopy images show that multi-wall carbon nanotubes (MWCNTs) directly attached to the amino ion implanted ITO (NH 2 /ITO) surface homogeneously and stably. The resulting MWCNTs-attached NH 2 /ITO (MWCNTs/NH 2 /ITO) substrate can be used as electrode material. Cyclic voltammetry results indicate that the MWCNTs/NH 2 /ITO electrode shows excellent electrochemical properties and obvious electrocatalytic activity towards uric acid, thus this material is expected to have potential in electrochemical analysis and biosensors.

  16. Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

    International Nuclear Information System (INIS)

    Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

    2009-01-01

    In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

  17. Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering

    International Nuclear Information System (INIS)

    Karasawa, T.; Miyata, Y.

    1993-01-01

    Transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal In-Sn alloy target in an Ar-O 2 gas mixture. The study demonstrates that the deposition on unheated substrates achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of about 7 x 10 -4 Ω cm), and visible transmission of about 90% for a wavelength of 420 nm. The effects of heat treatment at 450 C in air depends on the deposition conditions of the as-deposited ITO films. Although annealing improves the properties of as-deposited ITO films which were deposited with non-optimum conditions, the optimized condition for the formation of the film in the as-deposited state is essential to obtain a high quality transparent conducting coating. (orig.)

  18. Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

    Science.gov (United States)

    Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2012-02-01

    The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

  19. Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

    Science.gov (United States)

    Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

    2015-06-01

    Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

  20. Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

    2013-05-01

    Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

  1. Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

    Science.gov (United States)

    Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

    2018-01-01

    In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

  2. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

    2014-03-31

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2) × 10{sup 19} cm{sup −3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

  3. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup −} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2 eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91 cd/A, 102 lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  4. Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate

    International Nuclear Information System (INIS)

    Wong, F.L.; Fung, M.K.; Tong, S.W.; Lee, C.S.; Lee, S.T.

    2004-01-01

    A radio-frequency sputtering deposition method was applied to prepare indium tin oxide (ITO) on a plastic substrate, polyethylene terephthalate (PET). The correlation of deposition conditions and ITO film properties was systematically investigated and characterized. The optimal ITO films had a transmittance of over 90% in the visible range (400-700 nm) and a resistivity of 5.0x10 -4 Ω-cm. Sequentially α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminium, and magnesium-silver were thermally deposited on the ITO-coated PET substrate to fabricate flexible organic light-emitting diodes (FOLEDs). The fabricated devices had a maximum current efficiency of ∼4.1 cd/A and a luminance of nearly 4100 cd/m 2 at 100 mA/cm 2 . These values showed that the FOLEDs had comparable performance characteristics with the conventional organic light-emitting diodes made on ITO-coated glasses with the same device configuration

  5. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath; Hedhili, Mohamed N.; Alshareef, Husam N.; Kasiviswanathan, S.

    2010-01-01

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  6. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  7. Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

    2009-01-01

    This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

  8. Highly efficient fully flexible indium tin oxide free organic light emitting diodes fabricated directly on barrier-foil

    International Nuclear Information System (INIS)

    Bocksrocker, Tobias; Hülsmann, Neele; Eschenbaum, Carsten; Pargner, Andreas; Höfle, Stefan; Maier-Flaig, Florian; Lemmer, Uli

    2013-01-01

    We present a simple method for the fabrication of highly conductive and fully flexible metal/polymer hybrid anodes for efficient organic light emitting diodes (OLEDs). By incorporating ultra-thin metal grids into a conductive polymer, we fabricated anodes with very low sheet resistances and high transparency. After optimizing the metallic grid, OLEDs with these hybrid anodes are superior to OLEDs with standard indium tin oxide (ITO) anodes in luminous efficacy by a factor of ∼ 2. Furthermore, the sheet resistance can be reduced by up to an order of magnitude compared to ITO on polyethylene terephthalate (PET). The devices show a very low turn-on voltage and the hybrid anodes do not change the emissive spectra of the OLEDs. In addition, we fabricated the anodes directly on a barrier foil, making the double sided encapsulation of a typically used PET-substrate unnecessary

  9. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    International Nuclear Information System (INIS)

    Watanabe, Ken; Ohsawa, Takeo; Ross, Emily M.; Adachi, Yutaka; Haneda, Hajime; Sakaguchi, Isao; Takahashi, Ryosuke; Bierwagen, Oliver; White, Mark E.; Tsai, Min-Ying; Speck, James S.; Ohashi, Naoki

    2014-01-01

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO 2 ) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO 2 . The H-concentration of the In-doped SnO 2 films increased to (1–2) × 10 19  cm −3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations

  10. Intrinsic and Extrinsic Ferromagnetism in Co-Doped Indium Tin Oxide Revealed Using X-Ray Magnetic Circular Dichroism

    Directory of Open Access Journals (Sweden)

    A. M. H. R. Hakimi

    2017-01-01

    Full Text Available The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO thin films have been investigated using X-ray diffraction (XRD, magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD. Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.

  11. Cyclic voltammetry on n-alkylphosphonic acid self-assembled monolayer modified large area indium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Habich, Dana Berlinde [Siemens AG, CT T DE HW 3 Organic Electronics, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Halik, Marcus [Lehrstuhl fuer Polymerwerkstoffe, Department Werkstoffwissenschaften, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen (Germany); Schmid, Guenter, E-mail: guenter.schmid@siemens.com [Siemens AG, CT T DE HW 3 Organic Electronics, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany)

    2011-09-01

    We show stable bonding of n-alkylphosphonic acid self-assembled monolayers (SAMs) to indium tin oxide electrodes and their direct electrical characterization by cyclic voltammetry (CV). The functional coatings were investigated with regards to the addressability and stability of the electrodes, which are related to small changes in molecular layer thickness. The response of a redox active compound in solution to the faradic current is indirectly proportional to the molecular chain length of the SAMs. We observed a decrease of the electrode sensitivity with enhanced surface protection and slow long term degradation of the SAM under electrochemical stress by CV, and therefore conclude a trade-off optimum for molecules with the C10 chain.

  12. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath

    2010-09-15

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  13. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  14. Fast Inline Roll-to-Roll Printing for Indium-Tin-Oxide-Free Polymer Solar Cells Using Automatic Registration

    DEFF Research Database (Denmark)

    Hösel, Markus; Søndergaard, Roar R.; Jørgensen, Mikkel

    2013-01-01

    layer. The third and fourth layers were slot-die coated at the same time again using inline processing at a web speed of 10 mmin1 of firstly zinc oxide as the electron transport layer followed by P3HT:PCBM as the active layer. The first three layers (silver-grid/PEDOT:PSS/ZnO) comprise a generally......Fast inline roll-to-roll printing and coating on polyethylene terephthalate (PET) and barrier foil was demonstrated under ambient conditions at web speeds of 10 mmin1 for the manufacture of indium-tin-oxide-free (ITO-free) polymer solar cells comprising a 6-layer stack: silver-grid/PEDOT:PSS/ Zn...

  15. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    International Nuclear Information System (INIS)

    Li Yali; Li Chunyang; He Deyan; Li Junshuai

    2009-01-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 x 10 -4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 x 10 21 cm -3 and a lower mobility of ∼11.4 cm 2 V -1 s -1 . More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  16. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    Science.gov (United States)

    Chiu, Shao-Pin; Chung, Hui-Fang; Lin, Yong-Han; Kai, Ji-Jung; Chen, Fu-Rong; Lin, Juhn-Jong

    2009-03-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few µm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  17. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    International Nuclear Information System (INIS)

    Chiu, S-P; Lin, J-J; Chung, H-F; Kai, J-J; Chen, F-R; Lin, Y-H

    2009-01-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few μm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grueneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  18. Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

    Science.gov (United States)

    Gessert, T. A.; Li, X.; Phelps, P. W.; Coutts, T. J.; Tzafaras, N.

    1991-01-01

    Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

  19. Electrochemical deposition of gold-platinum alloy nanoparticles on an indium tin oxide electrode and their electrocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Song Yan; Ma Yuting; Wang Yuan [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Di Junwei, E-mail: djw@suda.edu.c [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Tu Yifeng [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China)

    2010-07-01

    Gold-platinum (Au-Pt) hybrid nanoparticles (Au-PtNPs) were successfully deposited on an indium tin oxide (ITO) surface using a direct electrochemical method. The resulting nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and electrochemical methods. It was found that the size of the Au-PtNPs depends on the number of electrodeposition cycles. Au-PtNPs obtained by 20 electrodeposition cycles had a cauliflower-shaped structure with an average diameter of about 60 nm. These Au-PtNPs exhibited alloy properties. Electrochemical measurements showed that the charge transfer resistivity was significantly decreased for the Au-PtNPs/ITO electrode. Additionally, the Au-PtNPs displayed an electrocatalytic activity for nitrite oxidation and oxygen reduction. The Au-PtNPs/ITO electrodes reported herein could possibly be used as electrocatalysts and sensors.

  20. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  1. Electrophoretic deposition (EPD) of multi-walled carbon nano tubes (MWCNT) onto indium-tin-oxide (ITO) glass substrates

    International Nuclear Information System (INIS)

    Mohd Roslie Ali; Shahrul Nizam Mohd Salleh

    2009-01-01

    Full text: Multi-Walled Carbon Nano tubes (MWCNT) were deposited onto Indium-Tin-Oxide (ITO)-coated glass substrates by introducing the use of Electrophoretic Deposition (EPD) as the method. The Multi-Walled Carbon Nano tubes (MWCNT) were dispersed ultrasonically in ethanol and sodium hydroxide (NaOH) to form stable suspension. The addition of Sodium Hydroxide in ethanol can stabilize the suspension, which was very important step before the deposition take place. Two substrates of Indium-Tin-Oxide(ITO)-coated glass placed in parallel facing each other (conductive side) into the suspension. The deposition occurs at room temperature, which the distance fixed at 1 cm between both electrodes and the voltage level applied was fixed at 400 V, respectively. The deposition time also was fixed at 30 minutes. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) will be characterized using Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), and Raman Microscope. The images of SEM shows that the Multi -Walled Carbon Nano tubes (MWCNT) were distributed uniformly onto the surface of ITO-Glass. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) could be the potential material in various practical applications such as field emission devices, fuel cells, and super capacitors. Electrophoretic deposition (EPD) technique was found to be an efficient technique in forming well distribution of Multi-Walled Carbon Nano tubes (MWCNT) onto ITO-Glass substrates, as proved in characterization methods, in which the optimum conditions will play the major role. (author)

  2. On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

    International Nuclear Information System (INIS)

    Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

    2010-01-01

    Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

  3. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Science.gov (United States)

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  4. Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

    International Nuclear Information System (INIS)

    Plagemann, A.; Ellmer, K.; Wiesemann, K.

    2007-01-01

    During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

  5. Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

    International Nuclear Information System (INIS)

    Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

    2016-01-01

    Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

  6. Upscaling of Indium Tin Oxide (ITO)-Free Polymer Solar Cells

    DEFF Research Database (Denmark)

    Angmo, Dechan

    Polymer solar cells (PSCs) aim to produce clean energy that is cost-competitive to energy produced by fossil fuel-based conventional energy sources. From an environmental perspective, PSCs already compares favorably to other solar cell technologies in terms of fewer emissions of greenhouse gases......, represents majority of the share of cost and energy footprint in terms of materials and processing in a conventional PSC module. Furthermore, the scarcity of indium is feared to create bottleneck in the dawning PSC industry and its brittle nature is an obstacle for fast processing of PSCs on flexible...

  7. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  8. Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

    International Nuclear Information System (INIS)

    Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

    2013-01-01

    Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

  9. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711 (Korea, Republic of); Kim, Yong-Sung [Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340 (Korea, Republic of)

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  10. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    International Nuclear Information System (INIS)

    Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

    2013-01-01

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  11. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

    2013-10-31

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  12. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  13. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  14. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  15. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  16. Nickel as an alternative semitransparent anode to indium tin oxide for polymer LED applications

    International Nuclear Information System (INIS)

    Krautz, D; Cheylan, S; Ghosh, D S; Pruneri, V

    2009-01-01

    We report on the possibility of using a thin Ni layer, instead of ITO, as a semitransparent hole-injecting electrode for bottom polymer LEDs. Thin metal layers of Ni were deposited by a sputtering technique and their electrical and optical properties with different deposition times have been investigated. Both square resistance and transmittance were seen to decrease with deposition time (thickness). The films showed a transmittance of around 30-40%, which is quite low compared to the 86% of ITO, while their square resistance was higher than that of ITO. Nevertheless, diodes based on a blue emitting polymer, polyfluorene (PFO), showed the same efficiency for either ITO or thin Ni electrodes, although the Ni transmittance is around 2.5 times lower than the ITO transmittance. Such preliminary results definitively suggest that indium-free organic devices can be achieved.

  17. Improving crystallization and electron mobility of indium tin oxide by carbon dioxide and hydrogen dual-step plasma treatment

    Science.gov (United States)

    Wang, Fengyou; Du, Rongchi; Ren, Qianshang; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-12-01

    Obtaining high conductivity indium tin oxide (ITO) films simultaneously with a "soft-deposited" (low temperature, low ions bombardment) and cost-efficient deposition process are critical aspect for versatile photo-electronic devices application. Usually, the low-cost "soft-deposited" process could be achieved via evaporation technique, but with scarifying the conductivity of the films. Here, we show a CO2 and H2 two-step plasma (TSP) post-treatment applied to ITO films prepared by reactive thermal evaporation (RTE), allows to meet the special trade-off between the deposition techniques and the electrical properties. Upon treatment, an increase in electron concentration and electron mobility is observed, which subsequently resulting a low sheet resistivity. The mobility reaches high values of 80.9 cm2/Vs for the TSP treated ∼100 nm thickness samples. From a combination of X-ray photoelectron spectroscopy and opto-electronic measurements, it demonstrated that: during the TSP process, the first-step CO2 plasma treatment could promote the crystallinity of the RTE ITO films. While the electron traps density at grain boundaries of polycrystalline RTE ITO films could be passivated by hydrogen atom during the second-step H2 plasma treatment. These results inspired that the TSP treatment process has significant application prospects owing to the outstanding electrical properties enhancement for "soft-deposited" RTE ITO films.

  18. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    International Nuclear Information System (INIS)

    Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui; Zheng, Hao-Xuan; Chen, Min-Chen; Sze, Simon M.

    2017-01-01

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O_2 inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O_2 plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O_2 plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O_2 plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O_2 plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O_2 plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  19. Effects of a base coating used for electropolymerization of poly(3,4-ethylenedioxythiophene) on indium tin oxide electrode

    International Nuclear Information System (INIS)

    Wang, X.J.; Wong, K.Y.

    2006-01-01

    Electropolymerization of poly(3,4-ethylenedioxythiophene) (PEDOT) films on indium tin oxide (ITO), using a very thin PEDOT:poly(styrene sulfonate) (PEDOT:PSS) film as a base coating, was carried out in a non-aqueous solution containing the monomer, an electrolyte and propylene carbonate by a two-electrode system. For comparison, PEDOT film electrodeposited on bare ITO substrate under the same condition was also presented. The PEDOT films deposited on these two substrates were characterized by scanning electron microscopy, energy disperse X-ray spectroscopy and Raman spectroscopy. The results indicate that the PEDOT film electrodeposited on bare ITO was not uniform, while the PEDOT film electrodeposited on PEDOT:PSS/ITO has better uniformity. The compositions of the different regions of PEDOT film electrodeposited on bare ITO and PEDOT:PSS/ITO were studied and discussed. Electrochromic devices (ECDs) based on PEDOT films electrodeposited on bare ITO and PEDOT:PSS/ITO were fabricated and characterized by UV-Vis-NIR spectrophotometric study. The results show that the display contrast of the ECD based on PEDOT film electrodeposited on PEDOT:PSS/ITO was improved over that on a bare ITO substrate

  20. The effect of the atmosphere on the optical properties of as-synthesized colloidal indium tin oxide

    International Nuclear Information System (INIS)

    Capozzi, Charles J; Joshi, Salil; Gerhardt, Rosario A; Ivanov, Ilia N

    2009-01-01

    The optical properties of indium tin oxide (ITO) have often been explored when it is in the form of deposited thin films. In this study, a colloidal chemistry approach is taken to investigate the influence of the atmosphere on the optical properties of ITO nanoparticles. X-ray diffraction (XRD), transmission electron microscopy (TEM), absorption spectroscopy and photoluminescence (PL) were used to characterize colloidal ITO samples, synthesized under aerated and inert conditions, with the same composition. In both cases, the ITO can be completely dispersed in a non-polar solvent without any evidence of agglomeration. For the ITO made in air, the nanoparticle-solvent solution exhibits a pale green color, and XRD and TEM indicate an average particle size of ∼7 nm and small shrinkage in the lattice structure. When the ITO is synthesized under inert conditions, the solution turns blue, and XRD and TEM indicate an average particle size of ∼8 nm and even less strain in the lattice than for the ITO synthesized under aerated conditions. The change in color and lattice strain is attributed to the difference in oxygen vacancy concentration for the ITO nanoparticles synthesized under aerated and inert conditions, which exhibit different optical band gap values of 3.89 eV and 4.05 eV, respectively. Our work here shows that thin film deposition or sintering steps may not be required for studying the optical properties of as-synthesized ITO nanoparticles.

  1. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  2. Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

    Science.gov (United States)

    Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

    2015-11-01

    We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces.

  3. Surface chemistry of carbon removal from indium tin oxide by base and plasma treatment, with implications on hydroxyl termination

    International Nuclear Information System (INIS)

    Chaney, John A.; Koh, Sharon E.; Dulcey, Charles S.; Pehrsson, Pehr E.

    2003-01-01

    The surface chemistry of carbon removal from indium tin oxide (ITO) has been investigated with Auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS), and high-resolution energy loss spectroscopy (HR-ELS). A vibrating Kelvin probe (KP) was used to monitor the work function (PHI) of ITO after cleaning, either by base-cleaning with alcoholic-KOH or by O 2 plasma-cleaning. Base-cleaning lowered PHI ITO as seen in the KP analysis, whereas plasma-cleaning slightly increased PHI ITO by an oxidative process. The degree of PHI ITO depression by base-cleaning was seen to depend on the initial surface, but the PHI depression itself was nonreductive to the ITO, as seen in the In-MNN AES lineshape. The nonreductive depression of PHI ITO by base-cleaning was further supported by a constant charge carrier density, as estimated from the HR-ELS. Base-cleaning was slightly more effective than the oxygen plasma in removing carbon from the ITO surface. However, base-cleaning preferentially removed graphitic carbon while leaving significant hydrocarbon contaminants, as determined by vibrational analysis with HREELS. All other ITO surfaces retained a significant carbon and hydrocarbon contamination as evidenced by AES and HREELS. There was little evidence of the formation of surface hydroxyl species, as expected for such an inherently contaminated surface as ITO

  4. Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

    Science.gov (United States)

    Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

    2017-11-16

    Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Effect of surface roughness and surface modification of indium tin oxide electrode on its potential response to tryptophan

    International Nuclear Information System (INIS)

    Khan, Md. Zaved Hossain; Nakanishi, Takuya; Kuroiwa, Shigeki; Hoshi, Yoichi; Osaka, Tetsuya

    2011-01-01

    Highlights: → We examine factors affecting potential response of ITO electrode to tryptophan. → Surface roughness of ITO electrode affects the stability of its rest potential. → Surface modification is effective for ITO electrode with a certain roughness. → Optimum values of work function exist for potential response of ITO to tryptophan. - Abstract: The effect of surface modification of indium tin oxide (ITO) electrode on its potential response to tryptophan was investigated for ITO substrates with different surface roughness. It was found that a small difference in surface roughness, between ∼1 and ∼2 nm of R a evaluated by atomic force microscopy, affects the rest potential of ITO electrode in the electrolyte. A slight difference in In:Sn ratio at the near surface of the ITO substrates, measured by angle-resolved X-ray photoelectron spectrometry and Auger electron spectroscopy is remarkable, and considered to relate with surface roughness. Interestingly, successive modification of the ITO surface with aminopropylsilane and disuccinimidyl suberate, of which essentiality to the potential response to indole compounds we previously reported, improved the stability of the rest potential and enabled the electrodes to respond to tryptophan in case of specimens with R a values ranging between ∼2 and ∼3 nm but not for those with R a of ∼1 nm. It was suggested that there are optimum values of effective work function of ITO for specific potential response to tryptophan, which can be obtained by the successive modification of ITO surface.

  6. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor.

    Science.gov (United States)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0-178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4°C in silica gel. Copyright © 2014 Elsevier B.V. All rights reserved.

  7. Effect of cerium doping on the electrical properties of ultrathin indium tin oxide films for application in touch sensors

    International Nuclear Information System (INIS)

    Kang, Saewon; Cho, Sanghyun; Song, Pungkeun

    2014-01-01

    The electrical and microstructure properties of cerium doped indium tin oxide (ITO:Ce) ultrathin films were evaluated to assess their potential application in touch sensors. 10 to 150-nm ITO and ITO:Ce films were deposited on glass substrates (200 °C) by DC magnetron sputtering using different ITO targets (doped with CeO 2 : 0, 1, 3, 5 wt.%). ITO:Ce (doped with CeO 2 : 3 wt.%) films with thickness < 25 nm showed lower resistivity than ITO. This lower resistivity was accompanied by a significant increase in the Hall mobility despite a decrease in crystallinity. In addition, the surface morphology and wetting properties improved with increasing Ce concentration. This is related to an earlier transition from an island structure to continuous film formation caused by an increase in the initial nucleation density. - Highlights: • 10 to 150-nm InSnO 2 (ITO) and ITO:Ce thin films were deposited by sputtering. • ITO:Ce films with thickness < 25 nm showed lower resistivity than ITO. • Hall mobility was strongly affected by initial film formation. • Surface morphology and wetting property improved with increasing Ce concentration. • Such behavior is related to an earlier transition to continuous film formation

  8. Effects of hydrogen gas on properties of tin-doped indium oxide films deposited by radio frequency magnetron sputtering method

    International Nuclear Information System (INIS)

    Kim, Do-Geun; Lee, Sunghun; Lee, Gun-Hwan; Kwon, Sik-Chol

    2007-01-01

    Tin-doped indium oxide (ITO) films were deposited at ∼ 70 deg. C of substrate temperature by radio frequency magnetron sputtering method using an In 2 O 3 -10% SnO 2 target. The effect of hydrogen gas ratio [H 2 / (H 2 + Ar)] on the electrical, optical and mechanical properties was investigated. With increasing the amount of hydrogen gas, the resistivity of the samples showed the lowest value of 3.5 x 10 -4 Ω.cm at the range of 0.8-1.7% of hydrogen gas ratio, while the resistivity increases over than 2.5% of hydrogen gas ratio. Hall effect measurements explained that carrier concentration and its mobility are strongly related with the resistivity of ITO films. The supplement of hydrogen gas also reduced the residual stress of ITO films up to the stress level of 110 MPa. The surface roughness and the crystallinity of the samples were investigated by using atomic force microscopy and x-ray diffraction, respectively

  9. Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

    Science.gov (United States)

    Mirzaee, Majid; Dolati, Abolghasem

    2015-03-01

    We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

  10. Tailoring the Electrochemical Properties of Carbon Nanotube Modified Indium Tin Oxide via in Situ Grafting of Aryl Diazonium.

    Science.gov (United States)

    Hicks, Jacqueline M; Wong, Zhi Yi; Scurr, David J; Silman, Nigel; Jackson, Simon K; Mendes, Paula M; Aylott, Jonathan W; Rawson, Frankie J

    2017-05-23

    Our ability to tailor the electronic properties of surfaces by nanomodification is paramount for various applications, including development of sensing, fuel cell, and solar technologies. Moreover, in order to improve the rational design of conducting surfaces, an improved understanding of structure/function relationships of nanomodifications and effect they have on the underlying electronic properties is required. Herein, we report on the tuning and optimization of the electrochemical properties of indium tin oxide (ITO) functionalized with single-walled carbon nanotubes (SWCNTs). This was achieved by controlling in situ grafting of aryl amine diazonium films on the nanoscale which were used to covalently tether SWCNTs. The structure/function relationship of these nanomodifications on the electronic properties of ITO was elucidated via time-of-flight secondary ion mass spectrometry and electrochemical and physical characterization techniques which has led to new mechanistic insights into the in situ grafting of diazonium. We discovered that the connecting bond is a nitro group which is covalently linked to a carbon on the aryl amine. The increased understanding of the surface chemistry gained through these studies enabled us to fabricate surfaces with optimized electron transfer kinetics. The knowledge gained from these studies allows for the rational design and tuning of the electronic properties of ITO-based conducting surfaces important for development of various electronic applications.

  11. Excitation of epsilon-near-zero resonance in ultra-thin indium tin oxide shell embedded nanostructured optical fiber.

    Science.gov (United States)

    Minn, Khant; Anopchenko, Aleksei; Yang, Jingyi; Lee, Ho Wai Howard

    2018-02-05

    We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

  12. Optical Detection of Ketoprofen by Its Electropolymerization on an Indium Tin Oxide-Coated Optical Fiber Probe.

    Science.gov (United States)

    Bogdanowicz, Robert; Niedziałkowski, Paweł; Sobaszek, Michał; Burnat, Dariusz; Białobrzeska, Wioleta; Cebula, Zofia; Sezemsky, Petr; Koba, Marcin; Stranak, Vitezslav; Ossowski, Tadeusz; Śmietana, Mateusz

    2018-04-27

    In this work an application of optical fiber sensors for real-time optical monitoring of electrochemical deposition of ketoprofen during its anodic oxidation is discussed. The sensors were fabricated by reactive magnetron sputtering of indium tin oxide (ITO) on a 2.5 cm-long core of polymer-clad silica fibers. ITO tuned in optical properties and thickness allows for achieving a lossy-mode resonance (LMR) phenomenon and it can be simultaneously applied as an electrode in an electrochemical setup. The ITO-LMR electrode allows for optical monitoring of changes occurring at the electrode during electrochemical processing. The studies have shown that the ITO-LMR sensor’s spectral response strongly depends on electrochemical modification of its surface by ketoprofen. The effect can be applied for real-time detection of ketoprofen. The obtained sensitivities reached over 1400 nm/M (nm·mg −1 ·L) and 16,400 a.u./M (a.u.·mg −1 ·L) for resonance wavelength and transmission shifts, respectively. The proposed method is a valuable alternative for the analysis of ketoprofen within the concentration range of 0.25⁻250 μg mL −1 , and allows for its determination at therapeutic and toxic levels. The proposed novel sensing approach provides a promising strategy for both optical and electrochemical detection of electrochemical modifications of ITO or its surface by various compounds.

  13. Effect of non-electroactive additives on the early stage pyrrole electropolymerization on indium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Beltran, A. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Centro de Innovación Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, PIIT-Monterrey C.P. 66600 Apodaca, N.L. (Mexico); Dominguez, C.; Bahena-Uribe, D. [Centro Investigación en Ingeniería y Ciencias Aplicadas (CIICAp), Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, C.P. 62209 Cuernavaca, Mor. (Mexico); Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Centro de Innovación Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, PIIT-Monterrey C.P. 66600 Apodaca, N.L. (Mexico); Cruz-Silva, R. [Research Center for Exotic NanoCarbon, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553 (Japan)

    2014-09-01

    The use of non-electroactive additives during electrodeposition of conducting polymers has long been used to modify the properties of deposited films. These additives can improve the adhesion, and not only change the morphology and deposition rate but also modify the chemical composition of the electrodeposited polymer. Several compounds have been used to modify deposition of polypyrrole; however, there is no systematic study of these compounds. In this work, we comparatively studied several water soluble chemical compounds, a cationic polymer, an anionic polymer, a cationic surfactant, and an anionic surfactant during potentiostatic electrodeposition of polypyrrole. In order to study the effect of these compounds on the interface, where the electrochemical polymerization takes place, we used electrochemical impedance spectroscopy. The morphology during the initial stage of growth was studied by atomic force microscopy, whereas the resulting polypyrrole films were observed by scanning electron microscopy. - Highlights: • Early-stage polymerization polypyrrole particles on indium tin oxide (ITO). • Anionic additives promote pyrrole oxidation and polypyrrole film growth on ITO. • Cationic polyelectrolyte promotes adhesion between ITO and polypyrrole film. • Non-electroactive additives strongly influence polypyrrole nucleation on ITO.

  14. Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Grochowska, Katarzyna, E-mail: kgrochowska@imp.gda.pl [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Karczewski, Jakub [Solid State Physics Department, Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, 11/12 Narutowicza St, 80-233, Gdańsk (Poland); Śliwiński, Gerard [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland)

    2015-12-01

    Graphical abstract: - Highlights: • ITO electrodes modified by NP arrays prepared by laser dewetting of thin Au films. • Enhanced activity, linear response and high sensitivity towards glucose. • Promising biosensor material AuNP-modified ITO of improved performance. - Abstract: The production and properties of the indium-tin-oxide (ITO) electrodes functionalized by Au nanoparticle (NP) arrays of a relatively large area formed by pulsed laser nanostructuring of thin gold films are reported and discussed. The SEM inspection of modified electrodes reveals the presence of the nearly spherical and disc-shaped particles of dimensions in the range of 40–120 nm. The NP-array geometry can be controlled by selection of the laser processing conditions. It is shown that particle size and packing density of the array are important factors which determine the electrode performance. In the case of NP-modified electrodes the peak current corresponding to the glucose direct oxidation process shows rise with increasing glucose concentration markedly higher comparing to the reference Au disc electrode. The detection limit reaches 12 μM and linear response of the sensor is observed from 0.1 to 47 mM that covers the normal physiological range of the blood sugar detection.

  15. Preparation of indium tin oxide anodes using energy filtrating technique for top-emitting organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhaoyong, Wang [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Mathematics and Physics, Henan Urban Construction University, Pingdingshan 467036 (China); Ning, Yao, E-mail: yaoning@zzu.edu.cn [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Changbao, Han; Xing, Hu [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2014-01-01

    Indium tin oxide (ITO) anodes were deposited by an improved magnetron sputtering technique (energy filtrating magnetron sputtering technique, EFMS) for top-emitting organic light-emitting diodes (TOLEDs). The phases, surface morphologies and optical properties were examined by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and spectroscopic ellipsometer. The sheet resistances were measured by the sheet resistance meter. The electrical properties were tested by the Hall measurement system. The electro-optic characteristics were examined by a special home-made measurement system. Results indicated that ITO anode deposited by EFMS had a more uniform and smoother surface with smaller grains. ITO film was prepared with the electrical property of the lowest resistivity (4.56 × 10{sup −4} Ω cm), highest carrier density (6.48 × 10{sup 20} cm{sup −3}) and highest carrier mobility (21.1 cm{sup 2}/V/s). The average transmissivity of the ITO film was 87.0% in the wavelength range of 400–800 nm. The TOLEDs based on this ITO anode had a lower turn-on voltage of 2 V (>0.02 mA/cm{sup 2}), higher current density of 58.4 mA/cm{sup 2} at 30 V, higher current efficiency of 1.374 cd/A and higher luminous efficiency of 0.175 lm/W. The possible mechanism of the technique was discussed in detail.

  16. Simple and robust near-infrared spectroscopic monitoring of indium-tin-oxide (ITO) etching solution using Teflon tubing

    International Nuclear Information System (INIS)

    Nah, Sanghee; Ryu, Kyungtag; Cho, Soohwa; Chung, Hoeil; Namkung, Hankyu

    2006-01-01

    The ability to monitor etching solutions using a spectroscopy directly through existing Teflon lines in electronic industries is highly beneficial and offers many advantages. A monitoring method was developed using near-infrared (NIR) measurements with Teflon tubing as a sample container for the quantification of components in the indium-tin-oxide (ITO) etching solution composed of hydrochloric acid (HCl), acetic acid (CH 3 COOH) and water. Measurements were reproducible and it was possible to use the same calibration model for different Teflon tubings. Even though partial least squares (PLS) calibration performance was slightly degraded for Teflon cells when compared to quartz cells of the similar pathlength, the calibration data correlated well with reference data. The robustness of Teflon-based NIR measurement was evaluated by predicting the spectra of 10 independent samples that were collected using five different Teflon tubes. Although, two Teflon tubes were visually less transparent than the other three, there was no significant variation in the standard error of predictions (SEPs) among the five Teflon tubes. Calibration accuracy was successfully maintained and highly repeatable prediction results were achieved. This study verifies that a Teflon-based NIR measurement is reliable for the monitoring of etching solutions and it can be successfully integrated into on-line process monitoring

  17. Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

    International Nuclear Information System (INIS)

    Tong, S.W.; Lau, K.M.; Sun, H.Y.; Fung, M.K.; Lee, C.S.; Lifshitz, Y.; Lee, S.T.

    2006-01-01

    It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF x ) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF x /HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF x /NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF x /NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF x -coated ITO contact are consistent with its smallest barrier height

  18. Disposable Non-Enzymatic Glucose Sensors Using Screen-Printed Nickel/Carbon Composites on Indium Tin Oxide Electrodes

    Directory of Open Access Journals (Sweden)

    Won-Yong Jeon

    2015-12-01

    Full Text Available Disposable screen-printed nickel/carbon composites on indium tin oxide (ITO electrodes (DSPNCE were developed for the detection of glucose without enzymes. The DSPNCE were prepared by screen-printing the ITO substrate with a 50 wt% nickel/carbon composite, followed by curing at 400 °C for 30 min. The redox couple of Ni(OH2/NiOOH was deposited on the surface of the electrodes via cyclic voltammetry (CV, scanning from 0–1.5 V for 30 cycles in 0.1 M NaOH solution. The DSPNCE were characterized by field-emission scanning electron microscopy (FE-SEM, X-ray photoelectron spectroscopy (XPS, and electrochemical methods. The resulting electrical currents, measured by CV and chronoamperometry at 0.65 V vs. Ag/AgCl, showed a good linear response with glucose concentrations from 1.0–10 mM. Also, the prepared electrodes showed no interference from common physiologic interferents such as uric acid (UA or ascorbic acid (AA. Therefore, this approach allowed the development of a simple, disposable glucose biosensor.

  19. Experimental and Simulated Investigations of Thin Polymer Substrates with an Indium Tin Oxide Coating under Fatigue Bending Loadings

    Directory of Open Access Journals (Sweden)

    Jiong-Shiun Hsu

    2016-08-01

    Full Text Available Stress-induced failure is a critical concern that influences the mechanical reliability of an indium tin oxide (ITO film deposited on a transparently flexible polyethylene terephthalate (PET substrate. In this study, a cycling bending mechanism was proposed and used to experimentally investigate the influences of compressive and tensile stresses on the mechanical stability of an ITO film deposited on PET substrates. The sheet resistance of the ITO film, optical transmittance of the ITO-coated PET substrates, and failure scheme within the ITO film were measured to evaluate the mechanical stability of the concerned thin films. The results indicated that compressive and tensile stresses generated distinct failure schemes within an ITO film and both led to increased sheet resistance and optical transmittance. In addition, tensile stress increased the sheet resistance of an ITO film more easily than compressive stress did. However, the influences of both compressive and tensile stress on increased optical transmittance were demonstrated to be highly similar. Increasing the thickness of a PET substrate resulted in increased sheet resistance and optical transmittance regardless of the presence of compressive or tensile stress. Moreover, J-Integral, a method based on strain energy, was used to estimate the interfacial adhesion strength of the ITO-PET film through the simulation approach enabled by a finite element analysis.

  20. Characteristics of Indium Tin Oxide (ITO Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps

    Directory of Open Access Journals (Sweden)

    Dongchul Choi

    2014-11-01

    Full Text Available In this study, indium-tin-oxide (ITO nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD panel scraps by means of lift-off method. This can be done by dissolving color filter (CF layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222 preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate.

  1. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  2. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  3. Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Capezzuto, P.; Bruno, G.; de Rosa, R.; Roca, F.; Summonte, C.; Plá, J.; Rizzoli, R.

    2002-01-01

    Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.

  4. A direct method to measure the fracture toughness of indium tin oxide thin films on flexible polymer substrates

    International Nuclear Information System (INIS)

    Chang, Rwei-Ching; Tsai, Fa-Ta; Tu, Chin-Hsiang

    2013-01-01

    This work presents a straightforward method to measure the fracture toughness of thin films deposited on flexible substrates. A 200 nm thick indium tin oxide (ITO) thin film is deposited on a 188 μm thick terephthalate (PET) substrate by a radio frequency magnetron sputtering machine. Using nanoindentation to induce brittle fracture on the ITO thin films, the energy release is calculated from integrating the resulting load–depth curve. An approach that directly measures the fracture toughness of thin films deposited on flexible substrates is proposed. A comparison shows that the results of the proposed method agree well with those of other reports. Furthermore, in order to improve the toughness of the ITO thin films, a copper interlayer is added between the ITO thin film and PET substrate. It shows that the fracture toughness of the ITO thin film deposited on the copper interlayer is higher than that of the one without the interlayer, which agrees well with the critical load tested by micro scratch. Further observations on optical and electric performances are also discussed in this work. - Highlights: • A straightforward method to measure the film's toughness • Directly using the load-depth curve of nanoindentation • The toughness is consistent with the critical load tested by micro scratch. • Interlayers can improve the film's toughness. • Optical and electric performances are also discussed

  5. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  6. Indium tin oxide refractometer in the visible and near infrared via lossy mode and surface plasmon resonances with Kretschmann configuration

    International Nuclear Information System (INIS)

    Torres, V.; Beruete, M.; Sánchez, P.; Del Villar, I.

    2016-01-01

    An indium tin oxide (ITO) refractometer based on the generation of lossy mode resonances (LMRs) and surface plasmon resonances (SPRs) is presented. Both LMRs and SPRs are excited, in a single setup, under grazing angle incidence with Kretschmann configuration in an ITO thin-film deposited on a glass slide. The sensing capabilities of the device are demonstrated using several solutions of glycerin and water with refractive indices ranging from 1.33 to 1.47. LMRs are excited in the visible range, from 617 nm to 682 nm under TE polarization and from 533 nm to 637 nm under TM polarization, with a maximum sensitivity of 700 nm/RIU and 1200 nm/RIU, respectively. For the SPRs, a sensing range between 1375 nm and 2494 nm with a maximum sensitivity of 8300 nm/RIU is measured under TM polarization. Experimental results are supported with numerical simulations based on a modification of the plane-wave method for a one-dimensional multilayer waveguide

  7. Disposable Non-Enzymatic Glucose Sensors Using Screen-Printed Nickel/Carbon Composites on Indium Tin Oxide Electrodes.

    Science.gov (United States)

    Jeon, Won-Yong; Choi, Young-Bong; Kim, Hyug-Han

    2015-12-10

    Disposable screen-printed nickel/carbon composites on indium tin oxide (ITO) electrodes (DSPNCE) were developed for the detection of glucose without enzymes. The DSPNCE were prepared by screen-printing the ITO substrate with a 50 wt% nickel/carbon composite, followed by curing at 400 °C for 30 min. The redox couple of Ni(OH)₂/NiOOH was deposited on the surface of the electrodes via cyclic voltammetry (CV), scanning from 0-1.5 V for 30 cycles in 0.1 M NaOH solution. The DSPNCE were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), and electrochemical methods. The resulting electrical currents, measured by CV and chronoamperometry at 0.65 V vs. Ag/AgCl, showed a good linear response with glucose concentrations from 1.0-10 mM. Also, the prepared electrodes showed no interference from common physiologic interferents such as uric acid (UA) or ascorbic acid (AA). Therefore, this approach allowed the development of a simple, disposable glucose biosensor.

  8. Indium tin oxide refractometer in the visible and near infrared via lossy mode and surface plasmon resonances with Kretschmann configuration

    Energy Technology Data Exchange (ETDEWEB)

    Torres, V. [Antenna Group–TERALAB, Public University of Navarra, 31006 Pamplona (Spain); Beruete, M. [Antenna Group–TERALAB, Public University of Navarra, 31006 Pamplona (Spain); Institute of Smart Cities, Public University of Navarra, 31006 Pamplona (Spain); Sánchez, P. [Department of Electric and Electronic Engineering, Public University of Navarra, Pamplona 31006 (Spain); Del Villar, I. [Institute of Smart Cities, Public University of Navarra, 31006 Pamplona (Spain); Department of Electric and Electronic Engineering, Public University of Navarra, Pamplona 31006 (Spain)

    2016-01-25

    An indium tin oxide (ITO) refractometer based on the generation of lossy mode resonances (LMRs) and surface plasmon resonances (SPRs) is presented. Both LMRs and SPRs are excited, in a single setup, under grazing angle incidence with Kretschmann configuration in an ITO thin-film deposited on a glass slide. The sensing capabilities of the device are demonstrated using several solutions of glycerin and water with refractive indices ranging from 1.33 to 1.47. LMRs are excited in the visible range, from 617 nm to 682 nm under TE polarization and from 533 nm to 637 nm under TM polarization, with a maximum sensitivity of 700 nm/RIU and 1200 nm/RIU, respectively. For the SPRs, a sensing range between 1375 nm and 2494 nm with a maximum sensitivity of 8300 nm/RIU is measured under TM polarization. Experimental results are supported with numerical simulations based on a modification of the plane-wave method for a one-dimensional multilayer waveguide.

  9. Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

    Science.gov (United States)

    Ho, Sut Kam; Garcia, Dario Machado

    2017-04-01

    A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

  10. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    International Nuclear Information System (INIS)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-01-01

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10 21  cm −3 ). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10 19  cm −3 to 1.4 × 10 21  cm −3 comes with a change of the effective electron mass from 0.35 m 0 to 0.53 m 0 and a decrease in the optical frequency mobility from about 20 cm 2  V −1  s −1 to 9 cm 2  V −1  s −1

  11. Preparation of Janus Particles and Alternating Current Electrokinetic Measurements with a Rapidly Fabricated Indium Tin Oxide Electrode Array.

    Science.gov (United States)

    Chen, Yu-Liang; Jiang, Hong-Ren

    2017-06-23

    This article provides a simple method to prepare partially or fully coated metallic particles and to perform the rapid fabrication of electrode arrays, which can facilitate electrical experiments in microfluidic devices. Janus particles are asymmetric particles that contain two different surface properties on their two sides. To prepare Janus particles, a monolayer of silica particles is prepared by a drying process. Gold (Au) is deposited on one side of each particle using a sputtering device. The fully coated metallic particles are completed after the second coating process. To analyze the electrical surface properties of Janus particles, alternating current (AC) electrokinetic measurements, such as dielectrophoresis (DEP) and electrorotation (EROT)- which require specifically designed electrode arrays in the experimental device- are performed. However, traditional methods to fabricate electrode arrays, such as the photolithographic technique, require a series of complicated procedures. Here, we introduce a flexible method to fabricate a designed electrode array. An indium tin oxide (ITO) glass is patterned by a fiber laser marking machine (1,064 nm, 20 W, 90 to 120 ns pulse-width, and 20 to 80 kHz pulse repetition frequency) to create a four-phase electrode array. To generate the four-phase electric field, the electrodes are connected to a 2-channel function generator and to two invertors. The phase shift between the adjacent electrodes is set at either 90° (for EROT) or 180° (for DEP). Representative results of AC electrokinetic measurements with a four-phase ITO electrode array are presented.

  12. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  13. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  14. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Po-Hsun [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chang, Kuan-Chang, E-mail: kcchang@pkusz.edu.cn [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); School of Electronic and Computer Engineering, Peking University, Shenzhen 518055 (China); Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Zheng, Hao-Xuan; Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Sze, Simon M. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC (China)

    2017-08-31

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O{sub 2} inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O{sub 2} plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O{sub 2} plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O{sub 2} plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O{sub 2} plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O{sub 2} plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  15. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    International Nuclear Information System (INIS)

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-01-01

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

  16. FeNi3/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    International Nuclear Information System (INIS)

    Fu, Li-Shun; Jiang, Jian-Tang; Zhen, Liang; Shao, Wen-Zhu

    2013-01-01

    Highlights: ► Electrical conductivity and infrared emissivity can be controlled by ITO content. ► The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. ► The permittivity in microwave band can be controlled by the electrical conductivity. ► EMA performance is significantly influenced by the content of ITO phase. ► FeNi 3 /ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi 3 /indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol–gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi 3 /ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi 3 /ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  17. FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Li-Shun; Jiang, Jian-Tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, Liang, E-mail: lzhen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-systems and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China); Shao, Wen-Zhu [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer Electrical conductivity and infrared emissivity can be controlled by ITO content. Black-Right-Pointing-Pointer The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. Black-Right-Pointing-Pointer The permittivity in microwave band can be controlled by the electrical conductivity. Black-Right-Pointing-Pointer EMA performance is significantly influenced by the content of ITO phase. Black-Right-Pointing-Pointer FeNi{sub 3}/ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol-gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi{sub 3}/ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi{sub 3}/ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  18. Influence of indium-tin oxide surface structure on the ordering and coverage of carboxylic acid and thiol monolayers

    International Nuclear Information System (INIS)

    Cerruti, Marta; Rhodes, Crissy; Losego, Mark; Efremenko, Alina; Maria, Jon-Paul; Fischer, Daniel; Franzen, Stefan; Genzer, Jan

    2007-01-01

    This paper analyses the variability of self-assembled monolayers (SAMs) formation on ITO depending on the substrate surface features. In particular, we report on the formation of carboxylic acid- and thiol-based SAMs on two lots of commercially prepared indium-tin oxide (ITO) thin films. Contact angle measurements, electrochemical experiments, and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy showed that the quality of monolayers formed differed substantially between the two ITO batches. Only one of the two ITO substrates was capable of forming well-organized thiol- and carboxylic acid-based SAMs. In order to rationalize these observations, atomic force microscopy and x-ray diffraction analyses were carried out, and SAMs were prepared on ITO substrates fabricated by sputtering in our laboratories. An attempt was made to influence the film microstructure and surface morphology by varying substrate temperatures during ITO deposition. Good-quality thiol and carboxylic acid SAMs were obtained on one of the ITO substrates prepared in-house. While our characterization could not single out conclusively one specific parameter in ITO surface structure that could be responsible for good SAMs formation, we could point out homogeneous surface morphology as a relevant factor for the quality of the SAMs. Evidence was also found for ITO crystallographic orientation to be a parameter influencing SAMs organization

  19. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

    KAUST Repository

    Shen, Youde

    2014-08-13

    Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.

  20. Robust infrared-shielding coating films prepared using perhydropolysilazane and hydrophobized indium tin oxide nanoparticles with tuned surface plasmon resonance.

    Science.gov (United States)

    Katagiri, Kiyofumi; Takabatake, Ryuichi; Inumaru, Kei

    2013-10-23

    Robust infrared (IR)-shielding coating films were prepared by dispersing indium tin oxide (ITO) nanoparticles (NPs) in a silica matrix. Hydrophobized ITO NPs were synthesized via a liquid phase process. The surface plasmon resonance (SPR) absorption of the ITO NPs could be tuned by varying the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength and strongest SPR absorption were obtained for the ITO NPs doped with 10% Sn because they possessed the highest electron carrier density. Coating films composed of a continuous silica matrix homogeneously dispersed with ITO NPs were obtained using perhydropolysilazane (PHPS) as a precursor. PHPS was completely converted to silica by exposure to the vapor from aqueous ammonia at 50 °C. The prepared coating films can efficiently shield IR radiation even though they are more than 80% transparent in the visible range. The coating film with the greatest IR-shielding ability completely blocked IR light at wavelengths longer than 1400 nm. The pencil hardness of this coating film was 9H at a load of 750 g, which is sufficiently robust for applications such as automotive glass.

  1. Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

    International Nuclear Information System (INIS)

    Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

    2006-01-01

    The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

  2. Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-01-01

    Full Text Available The ceramic target of Indium tinoxide (ITO (90% In2O3-10%SnO2 has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD, field emission scanning electron microscope (FESEM, atomic force microscope (AFM, UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222 and (400 of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.

  3. Characterization of surface-modified LiMn2O4 cathode materials with indium tin oxide (ITO) coatings and their electrochemical performance

    International Nuclear Information System (INIS)

    Kim, Chang-Sam; Kwon, Soon-Ho; Yoon, Jong-Won

    2014-01-01

    Graphical abstract: -- Highlights: • Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method. • The surface-modified layer was observed at a scale of several nanometers on LiMn 2 O 4 . • The ITO-coated LiMn 2 O 4 shows better capacity retention at 30 and 55 °C than pristine LiMn 2 O 4 . -- Abstract: Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method in an attempt to improve its electrochemical performance at elevated temperatures. The surface-modified LiMn 2 O 4 is characterized via XRD, FE-SEM, TEM, Auger electron spectroscopy (AES) and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The surface layer modified by substitution with indium was observed at a scale of several nanometers near the surface on LiMn 2 O 4 . The concentration of ITO for electrochemical performance was varied from 0.3 wt% to 0.8 wt%. The 0.5 wt% ITO coated LiMn 2 O 4 showed the best electrochemical performance. This enhancement in electrochemical performance is mainly attributed to the effect of the surface layer modified through ITO, which could suppress Mn dissolution and reduce the charge transfer resistance at the solid electrolyte interface

  4. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  5. Investigation of space-occupying lesions in the liver with technetium-99m tin colloid and indium-113m-chloride

    International Nuclear Information System (INIS)

    Nelson, M.J.; Klopper, J.F.

    1985-01-01

    Liver scanning with radiocolloids is an important method to determine the presence, the position and the size of space-occupying lesions in the liver. Unfortunately, this information is nonspecific and it is not possible to distinguish between tumours, abscesses or cysts. Thirty-six patients in whom a definite diagnosis of hepatoma, amoebic liver abscess or echinococcus cyst had been made were examined with technetium-99m tin colloid and indium-113m chloride. The amoebic liver abscesses were avascular, showed a hyperaemic area surrounding the abscess and appeared smaller on the indium than on the technetium scan. The hepatomas showed greater vascularity and absence of the hyperaemic area. Cysts were avascular, did not show a hyperaemic rim and the size was equal on both scans. The experience of the observers had an influence on the accuracy of interpretation of the scans; experienced observers made a correct diagnosis in 73% of cases. It is suggested that simultaneous technetium-99m tin colloid and indium 113m-chloride scans provide additional specificity in the differential diagnosis between hepatoma, amoebic liver abscess and echinococcus cysts

  6. Investigation of space-occupying lesions in the liver with technetium-99m tin colloid and indium-113m-chloride

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, M.J. (Provincial Hospital, Port Elizabeth (South Africa). Dept. of Nuclear Medicine); Klopper, J.F. (Stellenbosch Univ. (South Africa). Dept. of Nuclear Medicine)

    1985-01-26

    Liver scanning with radiocolloids is an important method to determine the presence, the position and the size of space-occupying lesions in the liver. Unfortunately, this information is nonspecific and it is not possible to distinguish between tumours, abscesses or cysts. Thirty-six patients in whom a definite diagnosis of hepatoma, amoebic liver abscess or echinococcus cyst had been made were examined with technetium-99m tin colloid and indium-113m chloride. The amoebic liver abscesses were avascular, showed a hyperaemic area surrounding the abscess and appeared smaller on the indium than on the technetium scan. The hepatomas showed greater vascularity and absence of the hyperaemic area. Cysts were avascular, did not show a hyperaemic rim and the size was equal on both scans. The experience of the observers had an influence on the accuracy of interpretation of the scans; experienced observers made a correct diagnosis in 73% of cases. It is suggested that simultaneous technetium-99m tin colloid and indium 113m-chloride scans provide additional specificity in the differential diagnosis between hepatoma, amoebic liver abscess and echinococcus cysts.

  7. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Jahwarhar Izuan Abdul [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry and Biology, Centre for Defense Foundation Studies, National Defense University of Malaysia, Sungai Besi Camp, 57000 Kuala Lumpur (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Yusof, Nor Azah, E-mail: azahy@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Abdullah, Jaafar [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, Uda [Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Hajian, Reza, E-mail: rezahajian@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization.

  8. Electro-Mechanical Coupling of Indium Tin Oxide Coated Polyethylene Terephthalate ITO/PET for Flexible Solar Cells

    KAUST Repository

    Saleh, Mohamed A.

    2013-05-15

    Indium tin oxide (ITO) is the most widely used transparent electrode in flexible solar cells because of its high transparency and conductivity. But still, cracking of ITO on PET substrates due to tensile loading is not fully understood and it affects the functionality of the solar cell tremendously as ITO loses its conductivity. Here, we investigate the cracking evolution in ITO/PET exposed to two categories of tests. Monotonous tensile testing is done in order to trace the crack propagation in ITO coating as well as determining a loading range to focus on during our study. Five cycles test is also conducted to check the crack closure effect on the resistance variation of ITO. Analytical model for the damage in ITO layer is implemented using the homogenization concept as in laminated composites for transverse cracking. The homogenization technique is done twice on COMSOL to determine the mechanical and electrical degradation of ITO due to applied loading. Finally, this damage evolution is used for a simulation to predict the degradation of ITO as function in the applied load and correlate this degradation with the resistance variation. Experimental results showed that during unloading, crack closure results in recovery of conductivity and decrease in the overall resistance of the cracked ITO. Also, statistics about the crack spacing showed that the cracking pattern is not perfectly periodical however it has a positively skewed distribution. The higher the applied load, the less the discrepancy in the crack spacing data. It was found that the cracking mechanism of ITO starts with transverse cracking with local delamination at the crack tip unlike the mechanism proposed in the literature of having only cracking pattern without any local delamination. This is the actual mechanism that leads to the high increase in ITO resistance. The analytical code simulates the damage evolution in the ITO layer as function in the applied strain. This will be extended further to

  9. Toward Plastic Smart Windows: Optimization of Indium Tin Oxide Electrodes for the Synthesis of Electrochromic Devices on Polycarbonate Substrates.

    Science.gov (United States)

    Laurenti, Marco; Bianco, Stefano; Castellino, Micaela; Garino, Nadia; Virga, Alessandro; Pirri, Candido F; Mandracci, Pietro

    2016-03-01

    Plastic smart windows are becoming one of the key elements in view of the fabrication of inexpensive, lightweight electrochromic (EC) devices to be integrated in the new generation of high-energy-efficiency buildings and automotive applications. However, fabricating electrochromic devices on polymer substrates requires a reduction of process temperature, so in this work we focus on the development of a completely room-temperature deposition process aimed at the preparation of ITO-coated polycarbonate (PC) structures acting as transparent and conductive plastic supports. Without providing any substrate heating or surface activation pretreatments of the polymer, different deposition conditions are used for growing indium tin oxide (ITO) thin films by the radiofrequency magnetron sputtering technique. According to the characterization results, the set of optimal deposition parameters is selected to deposit ITO electrodes having high optical transmittance in the visible range (∼90%) together with low sheet resistance (∼8 ohm/sq). The as-prepared ITO/PC structures are then successfully tested as conductive supports for the fabrication of plastic smart windows. To this purpose, tungsten trioxide thin films are deposited by the reactive sputtering technique on the ITO/PC structures, and the resulting single electrode EC devices are characterized by chronoamperometric experiments and cyclic voltammetry. The fast switching response between colored and bleached states, together with the stability and reversibility of their electrochromic behavior after several cycling tests, are considered to be representative of the high quality of the EC film but especially of the ITO electrode. Indeed, even if no adhesion promoters, additional surface activation pretreatments, or substrate heating were used to promote the mechanical adhesion among the electrode and the PC surface, the observed EC response confirmed that the developed materials can be successfully employed for the

  10. Evaluation of Biofuel Cells with Hemoglobin as Cathodic Electrocatalysts for Hydrogen Peroxide Reduction on Bare Indium-Tin-Oxide Electrodes

    Directory of Open Access Journals (Sweden)

    Yusuke Ayato

    2013-12-01

    Full Text Available A biofuel cell (BFC cathode has been developed based on direct electron transfer (DET of hemoglobin (Hb molecules with an indium-tin-oxide (ITO electrode and their electrocatalysis for reduction of hydrogen peroxide (H2O2. In this study, the ITO-coated glass plates or porous glasses were prepared by using a chemical vapor deposition (CVD method and examined the electrochemical characteristics of the formed ITO in pH 7.4 of phosphate buffered saline (PBS solutions containing and not containing Hb. In half-cell measurements, the reduction current of H2O2 due to the electrocatalytic activity of Hb increased with decreasing electrode potential from around 0.1 V versus Ag|AgCl|KCl(satd. in the PBS solution. The practical open-circuit voltage (OCV on BFCs utilizing H2O2 reduction at the Hb-ITO cathode with a hydrogen (H2 oxidation anode at a platinum (Pt electrode was expected to be at least 0.74 V from the theoretical H2 oxidation potential of −0.64 V versus Ag|AgCl|KCl(satd. in pH 7.4. The assembled single cell using the ITO-coated glass plate showed the OCV of 0.72 V and the maximum power density of 3.1 µW cm−2. The maximum power per single cell was recorded at 21.5 µW by using the ITO-coated porous glass.

  11. Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

    Science.gov (United States)

    Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

    1983-05-01

    The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

  12. Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

    Science.gov (United States)

    Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

    2018-02-01

    CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

  13. Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms.

    Science.gov (United States)

    Schmidt, Igor; Gad, Alaaeldin; Scholz, Gregor; Boht, Heidi; Martens, Michael; Schilling, Meinhard; Suryo Wasisto, Hutomo; Waag, Andreas; Schröder, Uwe

    2017-08-15

    Microbial electrochemical technologies (METs) are one of the emerging green bioenergy domains that are utilizing microorganisms for wastewater treatment or electrosynthesis. Real-time monitoring of bioprocess during operation is a prerequisite for understanding and further improving bioenergy harvesting. Optical methods are powerful tools for this, but require transparent, highly conductive and biocompatible electrodes. Whereas indium tin oxide (ITO) is a well-known transparent conductive oxide, it is a non-ideal platform for biofilm growth. Here, a straightforward approach of surface modification of ITO anodes with gold (Au) is demonstrated, to enhance direct microbial biofilm cultivation on their surface and to improve the produced current densities. The trade-off between the electrode transmittance (critical for the underlying integrated sensors) and the enhanced growth of biofilms (crucial for direct monitoring) is studied. Au-modified ITO electrodes show a faster and reproducible biofilm growth with three times higher maximum current densities and about 6.9 times thicker biofilms compared to their unmodified ITO counterparts. The electrochemical analysis confirms the enhanced performance and the reversibility of the ITO/Au electrodes. The catalytic effect of Au on the ITO surface seems to be the key factor of the observed performance improvement since the changes in the electrode conductivity and their surface wettability are relatively small and in the range of ITO. An integrated platform for the ITO/Au transparent electrode with light-emitting diodes was fabricated and its feasibility for optical biofilm thickness monitoring is demonstrated. Such transparent electrodes with embedded catalytic metals can serve as multifunctional windows for biofilm diagnostic microchips. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    International Nuclear Information System (INIS)

    Park, Taesoon; Kim, Dongsik

    2015-01-01

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

  15. Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics

    Directory of Open Access Journals (Sweden)

    Yuya Yokokura

    2017-08-01

    Full Text Available The use of Langmuir-Blodgett (LB monolayers to modify the indium tin oxide (ITO work function and thus improve the performance of zinc phthalocyanine (ZnPc/fullerene (C60-based and boron subphthalocyanine chloride (SubPc/C60-based small molecule organic photovoltaic devices (OPVs was examined. In general, LB precursor compounds contain one or more long alkyl chain substituents that can act as spacers to prevent electrical contact with adjoining electrode surfaces. As one example of such a compound, arachidic acid (CH3(CH218COOH was inserted in the forms of one-layer, three-layer or five-layer LB films between the anode ITO layer and the p-type layer in ZnPc-C60-based OPVs to investigate the effects of the long alkyl chain group when it acts as an electrically insulating spacer. The short-circuit current density (Jsc values of the OPVs with the three- and five-layer inserts (1.78 mA·cm−2 and 0.61 mA·cm−2, respectively were reduced dramatically, whereas the Jsc value for the OPV with the single-layer insertion (2.88 mA·cm−2 was comparable to that of the OPV without any insert (3.14 mA·cm-2. The ITO work function was shifted positively by LB deposition of a surfactant compound, C9F19C2H4-O-C2H4-COOH (PFECA, which contained a fluorinated head group. This positive effect was maintained even after formation of an upper p-type organic layer. The Jsc and open-circuit voltage (Voc of the SubPc-C60-based OPV with the LB-modified ITO layers were effectively enhanced. As a result, a 42% increase in device efficiency was achieved.

  16. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  17. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  18. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    International Nuclear Information System (INIS)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-01-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization

  19. Electrochemically reduced graphene–gold nano particle composite on indium tin oxide for label free immuno sensing of estradiol

    International Nuclear Information System (INIS)

    Dharuman, Venkataraman; Hahn, Jong Hoon; Jayakumar, Kumarasamy; Teng, Wei

    2013-01-01

    Highlights: •Label free immunosensing of estradiol is demonstrated using graphene–AuNP composite fabricated on ITO transducer. •Continuous potential cycling reduction method selectively reduces the acid groups of the graphene oxide at pH 6.5. •The AuNP deposition induces change in the graphene orientation on the ITO surface and enhances the charge transport. -- Abstract: Electro reduced graphene and gold nano particle (ErG/AuNP) composite is prepared on indium tin oxide (ITO) surface. Characterization by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Raman spectroscopy (RS), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) techniques reveals the formation of vertical and flat oriented ErG films on the ITO. The AuNP deposition changes the flat oriented ErGs into vertical orientation indicated by the FESEM. Coherent interactions between the ITO, ErG and AuNPs are responsible for the discrete formation of vertical oriented hetero structures of ErG–AuNP composite on the ITO. Electrochemical properties are investigated using [Fe(CN) 6 ] 3−/4− and [Ru(NH 3 )] 2+/3+ redox probes using cyclic voltammetry (CV). While the [Fe(CN) 6 ] 3−/4− shows fast reversible behavior, the [Ru(NH 3 )] 2+/3+ reveals very slow charge transport on both ErG and ErG/AuNP films indicating the multi and compact graphene layer posses positive charge at pH 6.5 used for preparing these composites. Immuno sensing of breast cancer inducing hormone 17β-estradiol (E2) is demonstrated in presence of [Fe(CN) 6 ] 3−/4− . Estrone (E1) and estriol (E3) antigens are used as the controls. The near vertical immobilization of anti-estradiol-antibody enhances the lowest detection limit of 0.1 fmol and dynamic range of 1 × 10 −3 –0.1 × 10 −12 M without any signal amplifiers. These results prove that the acid group of the GO is reduced selectively in controlled way by simple potential

  20. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Deuk-Kyu [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Misra, Mirnmoy; Lee, Ye-Eun [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of); Baek, Sung-Doo [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Lee, Tae Il, E-mail: t2.lee77@gachon.ac.kr [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of)

    2017-05-31

    Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

  1. Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

    Science.gov (United States)

    Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

    2012-07-01

    Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

  2. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  3. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

    2016-05-15

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

  4. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    International Nuclear Information System (INIS)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-01-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

  5. Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

    Directory of Open Access Journals (Sweden)

    Sang Hyun Jung

    2013-01-01

    Full Text Available Various nanopatterns on the transparent conducting indium tin oxide (ITO layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs. Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

  6. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  7. Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    International Nuclear Information System (INIS)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-01-01

    O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

  8. Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    Science.gov (United States)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-11-01

    O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

  9. Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode

    International Nuclear Information System (INIS)

    Chung, Choong-Heui; Ko, Young-Wook; Kim, Yong-Hae; Sohn, Choong-Yong; Hye Yong Chu; Ko Park, Sang-Hee; Lee, Jin Ho

    2005-01-01

    Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 x 10 -4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m 2 was obtained. The device performance was comparable to a conventional OLED

  10. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    Science.gov (United States)

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

  11. Size-dependent electronic structure controls activity for ethanol electro-oxidation at Ptn/indium tin oxide (n = 1 to 14).

    Science.gov (United States)

    von Weber, Alexander; Baxter, Eric T; Proch, Sebastian; Kane, Matthew D; Rosenfelder, Michael; White, Henry S; Anderson, Scott L

    2015-07-21

    Understanding the factors that control electrochemical catalysis is essential to improving performance. We report a study of electrocatalytic ethanol oxidation - a process important for direct ethanol fuel cells - over size-selected Pt centers ranging from single atoms to Pt14. Model electrodes were prepared by soft-landing of mass-selected Ptn(+) on indium tin oxide (ITO) supports in ultrahigh vacuum, and transferred to an in situ electrochemical cell without exposure to air. Each electrode had identical Pt coverage, and differed only in the size of Pt clusters deposited. The small Ptn have activities that vary strongly, and non-monotonically with deposited size. Activity per gram Pt ranges up to ten times higher than that of 5 to 10 nm Pt particles dispersed on ITO. Activity is anti-correlated with the Pt 4d core orbital binding energy, indicating that electron rich clusters are essential for high activity.

  12. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  13. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  14. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pourhashemi, A., E-mail: pourhashemi@engr.ucsb.edu; Farrell, R. M.; Cohen, D. A.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  15. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  16. X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

    International Nuclear Information System (INIS)

    Nelson, A.J.; Aharoni, H.

    1987-01-01

    X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

  17. Chlorinated indium tin oxide electrode by InCl{sub 3} aqueous solution for high-performance organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yun; Wang, Bo; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn; Liao, Liang-Sheng, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); Zhou, Dong-Ying [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-04-11

    The authors develop a facile and effective method to produce the chlorinated indium tin oxide (Cl-ITO) treated by InCl{sub 3} aqueous solution and UV/ozone. The work function of the Cl-ITO achieved by this treatment is as high as 5.69 eV, which is increased by 1.09 eV compared with that of the regular ITO without any treatment. Further investigation proved that the enhancement of the work function is attributed to the formation of In-Cl bonds on the Cl-ITO surface. Green phosphorescent organic light-emitting devices based on the Cl-ITO electrodes exhibit excellent electroluminescence performance, elongating lifetime due to the improvement in hole injection.

  18. Performance optimization of AlGaN-based LEDs by use of ultraviolet-transparent indium tin oxide: Effect of in situ contact treatment

    Science.gov (United States)

    Tu, Wenbin; Chen, Zimin; Zhuo, Yi; Li, Zeqi; Ma, Xuejin; Wang, Gang

    2018-05-01

    Ultraviolet (UV)-transparent indium tin oxide (ITO) grown by metal–organic chemical vapor deposition (MOCVD) is used as the current-spreading layer for 368 nm AlGaN-based light-emitting diodes (LEDs). By performing in situ contact treatment on the LED/ITO interface, the morphology, resistivity, and contact resistance of electrodes become controllable. Resistivity of 2.64 × 10‑4 Ω cm and transmittance at 368 nm of 95.9% are realized for an ITO thin film grown with Sn-purge in situ treatment. Therefore, the high-power operating voltage decreases from 3.94 V (without treatment) to 3.83 V (with treatment). The improved performance is attributed to the lowering of the tunneling barrier at the LED/ITO interface.

  19. Role of Nitrogenase and Ferredoxin in the Mechanism of Bioelectrocatalytic Nitrogen Fixation by the Cyanobacteria Anabaena variabilis SA-1 Mutant Immobilized on Indium Tin Oxide (ITO) Electrodes

    International Nuclear Information System (INIS)

    Knoche, Krysti L.; Aoyama, Erika; Hasan, Kamrul; Minteer, Shelley D.

    2017-01-01

    Current ammonia production methods are costly and environmentally detrimental. Biological nitrogen fixation has implications for low cost, environmentally friendly ammonia production. It has been shown that electrochemical stimulation increases the ammonia output of the cyanobacteria SA-1 mutant of Anabaena variabilis, but the mechanism of bioelectrocatalysis has been unknown. Here, the mechanism of electrostimulated biological ammonia production is investigated by immobilization of the cyanobacteria with polyvinylamine on indium tin oxide (ITO) coated polyethylene. Cyclic voltammetry is performed in the absence and presence of various substrates and with nitrogenase repressed and nitrogenase derepressed cells to study mechanism, and cyclic voltammetry and UV–vis spectroscopy are used to identify redox moieties in the spent electrolyte. A bioelectrocatalytic signal is observed for nitrogenase derepressed A. variabilis SA-1 in the presence of N_2 and light. Results indicate that the redox protein ferredoxin mediates electron transfer between nitrogenase and the electrode to stimulate ammonia production.

  20. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  1. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  2. Electrochemical pulsed deposition of platinum nanoparticles on indium tin oxide/polyethylene terephthalate as a flexible counter electrode for dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Wei, Yu-Hsuan; Chen, Chih-Sheng; Ma, Chen-Chi M.; Tsai, Chuen-Horng; Hsieh, Chien-Kuo

    2014-01-01

    In this study, a pulsed-mode electrochemical deposition (Pulse-ECD) technique was employed to deposit platinum nanoparticles (PtNPs) on the indium tin oxide/polyethylene terephthalate (ITO/PET) substrate as a flexible counter electrode for dye-sensitized solar cells (DSSCs). The characteristic properties of the Pulse-ECD PtNPs were prepared and compared to the traditional (electron beam) Pt film. The surface morphologies of the PtNPs were examined by field emission scanning electron microscopy (FE-SEM) and the atomic force microscope (AFM). The FE-SEM results showed that our PtNPs were deposited uniformly on the ITO/PET flexible substrates via the Pulse-ECD technique. The AFM results indicated that the surface roughness of the pulsed PtNPs influenced the power conversion efficiency (PCE) of DSSCs, due to the high specific surface area of PtNPs which enhanced the catalytic activities for the reduction (I 3 − to I − ) of redox electrolyte. In combination with a N719 dye-sensitized TiO 2 working electrode and an iodine-based electrolyte, the DSSCs with the PtNPs flexible counter electrode showed a PCE of 4.3% under the illumination of AM 1.5 (100 mW cm −2 ). The results demonstrated that the Pulse-ECD PtNPs are good candidate for flexible DSSCs. - Highlights: • We used indium tin oxide/polyethylene terephthalate as a flexible substrate. • We utilized pulse electrochemical deposition to deposit platinum nanoparticles. • We synthesized a flexible counter electrode for dye-sensitized solar cell (DSSC). • The power conversion efficiency of DSSC was measured to be 4.3%

  3. Highly sensitive detection of 2,4,6-trichlorophenol based on HS-β-cyclodextrin/gold nanoparticles composites modified indium tin oxide electrode

    International Nuclear Information System (INIS)

    Zheng, Xiangli; Liu, Shan; Hua, Xiaoxia; Xia, Fangquan; Tian, Dong; Zhou, Changli

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: •A novel electrochemical sensing platform by self-assembling of HS-β-cyclodextrin/gold nanoparticles onto indium tin oxide electrode (HS-β-CD/AuNPs/SAM/ITO electrode) surface was constructed. •The proposed electrochemical sensor exhibited high sensitivity for the determination 2,4,6-trichlorophenol which electrochemical activity is very weak. •The newly developed method was successfully applied to quantitatively determine 2,4,6-trichlorophenol in tap water samples. -- ABSTRACT: A new electrochemical sensor for determination of 2,4,6-trichlorophenol (2,4,6-TCP) was fabricated. The characterization of the sensor was studied by scanning electron microscopy, electrochemical impedance spectroscopy and cyclic voltammetry techniques. The electrochemical behavior of 2,4,6-TCP was investigated using cyclic voltammetry and differential pulse voltammetry at the HS-β-cyclodextrin (HS-β-CD)/gold nanoparticles (AuNPs) composite modified indium tin oxide (ITO) electrode. The results showed that the current responses of 2,4,6-TCP greatly enhanced due to the high catalytic activity and enrichment capability of composites. The peak current of 2,4,6-TCP increases linearly with the increase of the 2,4,6-TCP concentration from 3.0 × 10 −9 to 2.8 × 10 −8 M, with the limit of detection of 1.0 × 10 −9 . Further more, the modified electrode was successfully applied to detect the level of 2,4,6-TCP in tap water samples with excellent sensitivity

  4. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    International Nuclear Information System (INIS)

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O 2 , H 2 O, and N 2 O as the reactive gases. Experimental results show that the electrical properties of the N 2 O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N 2 O introduction into the deposition process, where the field mobility reach to 30.8 cm 2 V –1 s –1 , which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT

  5. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    International Nuclear Information System (INIS)

    Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-01-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

  6. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Science.gov (United States)

    Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  7. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  8. Indium-tin-oxide thin film transistor biosensors for label-free detection of avian influenza virus H5N1

    International Nuclear Information System (INIS)

    Guo, Di; Zhuo, Ming; Zhang, Xiaoai; Xu, Cheng; Jiang, Jie; Gao, Fu; Wan, Qing; Li, Qiuhong; Wang, Taihong

    2013-01-01

    Highlights: ► A highly selective label-free biosensor is established based on indium-tin-oxide thin-film transistors (ITO TFTs). ► AI H5N1 virus was successfully detected through shift in threshold voltage and field-effect mobility of ITO TFT. ► The ITO TFT is applied in biosensor for the first time and shows good reusability and stability. ► Fabrication of the platform is simple with low cost, which is suitable for mass commercial production. -- Abstract: As continuous outbreak of avian influenza (AI) has become a threat to human health, economic development and social stability, it is urgently necessary to detect the highly pathogenic avian influenza H5N1 virus quickly. In this study, we fabricated indium-tin-oxide thin-film transistors (ITO TFTs) on a glass substrate for the detecting of AI H5N1. The ITO TFT is fabricated by a one-shadow-mask process in which a channel layer can be simultaneously self-assembled between ITO source/drain electrodes during magnetron sputtering deposition. Monoclonal anti-H5N1 antibodies specific for AI H5N1 virus were covalently immobilized on the ITO channel by (3-glycidoxypropyl)trimethoxysilane. The introduction of target AI H5N1 virus affected the electronic properties of the ITO TFT, which caused a change in the resultant threshold voltage (V T ) and field-effect mobility. The changes of I D –V G curves were consistent with an n-type field effect transistor behavior affected by nearby negatively charged AI H5N1 viruses. The transistor based sensor demonstrated high selectivity and stability for AI H5N1 virus sensing. The sensor showed linear response to AI H5N1 in the concentrations range from 5 × 10 −9 g mL −1 to 5 × 10 −6 g mL −1 with a detection limit of 0.8 × 10 −10 g mL −1 . Moreover, the ITO TFT biosensors can be repeatedly used through the washing processes. With its excellent electric properties and the potential for mass commercial production, ITO TFTs can be promising candidates for the

  9. Indium-tin-oxide thin film transistor biosensors for label-free detection of avian influenza virus H5N1

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di; Zhuo, Ming [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Zhang, Xiaoai [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Xu, Cheng; Jiang, Jie [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Gao, Fu [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Wan, Qing, E-mail: wanqing7686@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Li, Qiuhong, E-mail: liqiuhong2004@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Wang, Taihong, E-mail: thwang@hnu.cn [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China)

    2013-04-22

    Highlights: ► A highly selective label-free biosensor is established based on indium-tin-oxide thin-film transistors (ITO TFTs). ► AI H5N1 virus was successfully detected through shift in threshold voltage and field-effect mobility of ITO TFT. ► The ITO TFT is applied in biosensor for the first time and shows good reusability and stability. ► Fabrication of the platform is simple with low cost, which is suitable for mass commercial production. -- Abstract: As continuous outbreak of avian influenza (AI) has become a threat to human health, economic development and social stability, it is urgently necessary to detect the highly pathogenic avian influenza H5N1 virus quickly. In this study, we fabricated indium-tin-oxide thin-film transistors (ITO TFTs) on a glass substrate for the detecting of AI H5N1. The ITO TFT is fabricated by a one-shadow-mask process in which a channel layer can be simultaneously self-assembled between ITO source/drain electrodes during magnetron sputtering deposition. Monoclonal anti-H5N1 antibodies specific for AI H5N1 virus were covalently immobilized on the ITO channel by (3-glycidoxypropyl)trimethoxysilane. The introduction of target AI H5N1 virus affected the electronic properties of the ITO TFT, which caused a change in the resultant threshold voltage (V{sub T}) and field-effect mobility. The changes of I{sub D}–V{sub G} curves were consistent with an n-type field effect transistor behavior affected by nearby negatively charged AI H5N1 viruses. The transistor based sensor demonstrated high selectivity and stability for AI H5N1 virus sensing. The sensor showed linear response to AI H5N1 in the concentrations range from 5 × 10{sup −9} g mL{sup −1} to 5 × 10{sup −6} g mL{sup −1} with a detection limit of 0.8 × 10{sup −10} g mL{sup −1}. Moreover, the ITO TFT biosensors can be repeatedly used through the washing processes. With its excellent electric properties and the potential for mass commercial production, ITO TFTs

  10. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo

    1995-01-01

    Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)

  11. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science

    1995-02-01

    Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).

  12. Effect of tin doping on the optical properties of indium oxide films by a spray pyrolysis method

    International Nuclear Information System (INIS)

    Ibrahim Abu Talib; Muhammad Mat Salleh; Muhammad Yahya; Mod Noor Bader Sher

    1993-01-01

    Thin films of stannum doped indium oxide were deposited on glass by a X-ray pyrolysis method. The substrate temperature and the rate of flow of the carrier gas were fixed at 450 0 C and 2.5 litre/minute respectively during deposition. The dependence of the optical properties of the films on the doping concentration was studied. It is found that the transmission of the visible wavelengths (300 to 800 nm) through the films increases around 5% from 74.9% as the film was doped with 10% stannum. It is also found that the optical energy bandgap increases 0.2 eV from 3.16 to 3.36 eV by doping the film with 10% stannum. The increase is attributed to the Bernstein-Moss (1) and self-energy (2) effects

  13. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Christian Dunkel

    2014-04-01

    Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

  14. Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

    Science.gov (United States)

    Ghosh, Shyamsundar; Dev, Bhupendra Nath

    2018-05-01

    Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

  15. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    International Nuclear Information System (INIS)

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  16. Cesium-incorporated indium-tin-oxide films for use as a cathode with low work function for a transparent organic light-emitting device

    International Nuclear Information System (INIS)

    Uchida, Takayuki; Mimura, Toshifumi; Ohtsuka, Masao; Otomo, Toshio; Ide, Mieko; Shida, Azusa; Sawada, Yutaka

    2006-01-01

    Transparent organic light-emitting devices (TOLEDs) were successfully fabricated utilizing a novel transparent conducting cathode with low work function. Cesium-incorporated indium-tin-oxide film was deposited on the organic layers with negligible damage by simultaneous operation of RF magnetron sputtering using an ITO target and vacuum evaporation of metallic cesium. Incorporation of cesium in the ITO film was confirmed by XPS analysis. The work function (4.3 eV) determined by photoelectron spectroscopy in air (PESA) was lower than that of 0.3-0.4-eV without cesium-incorporation and stable under the atmospheric environment. The electron injection efficiency of cesium-incorporated ITO cathode in the present transparent OLED fabricated was comparable to that of the previous double-layered structure comprising of ITO cathode and an organic buffer layer (BCP) doped by evaporation of cesium [T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka, T. Otomo, D.R. Marx, Jpn. J. Appl. Phys., 44, No. 9 (2005) L282

  17. Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

    Science.gov (United States)

    Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

    2012-10-01

    The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

  18. Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

    Science.gov (United States)

    Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

    2012-02-01

    In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

  19. Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

    Science.gov (United States)

    Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

    2017-11-01

    Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

  20. Effect of applied voltage on the structural properties of SnO2 nanostuctures grown on indium-tin-oxide coated glass substrates.

    Science.gov (United States)

    Lee, Dea Uk; Yun, Dong Yeol; No, Young Soo; Hwang, Jun Ho; Lee, Chang Hun; Kim, Tae Whan

    2013-11-01

    SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.

  1. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  2. Highly-ordered mesoporous titania thin films prepared via surfactant assembly on conductive indium-tin-oxide/glass substrate and its optical properties

    International Nuclear Information System (INIS)

    Uchida, Hiroshi; Patel, Mehul N.; May, R. Alan; Gupta, Gaurav; Stevenson, Keith J.; Johnston, Keith P.

    2010-01-01

    Highly ordered mesoporous titanium dioxide (titania, TiO 2 ) thin films on indium-tin-oxide (ITO) coated glass were prepared via a Pluronic (P123) block copolymer template and a hydrophilic TiO 2 buffer layer. The contraction of the 3D hexagonal array of P123 micelles upon calcination merges the titania domains on the TiO 2 buffer layer to form mesoporous films with a mesochannel diameter of approximately 10 nm and a pore-to-pore distance of 10 nm. The mesoporous titania films on TiO 2 -buffered ITO/glass featured an inverse mesospace with a hexagonally-ordered structure, whereas the films formed without a TiO 2 buffer layer had a disordered microstructure with submicron cracks because of non-uniform water condensation on the hydrophobic ITO/glass surface. The density of the mesoporous film was 83% that of a bulk TiO 2 film. The optical band gap of the mesoporous titania thin film was approximately 3.4 eV, larger than that for nonporous anatase TiO 2 (∼ 3.2 eV), suggesting that the nanoscopic grain size leads to an increase in the band gap due to weak quantum confinement effects. The ability to form highly-ordered mesoporous titania films on electrically conductive and transparent substrates offers the potential for facile fabrication of high surface area semiconductive films with small diffusion lengths for optoelectronics applications.

  3. Electrochemical polymerization of an aniline-terminated self-assembled monolayer on indium tin oxide electrodes and its effect on polyaniline electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Silva, Rodolfo [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001Col. Chamilpa, CP 62210, Cuernavaca, Mor. (Mexico)], E-mail: rcruzsilva@uaem.mx; Nicho, Maria E.; Resendiz, Mary C.; Agarwal, Vivechana [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001Col. Chamilpa, CP 62210, Cuernavaca, Mor. (Mexico); Castillon, Felipe F.; Farias, Mario H. [Centro de Ciencias de la Materia Condensada de la UNAM, Apdo. Postal 2681 C.P. 22800 Ensenada, B.C. (Mexico)

    2008-06-02

    Indium tin oxide (ITO) transparent electrodes were surface modified by a self-assembled monolayer of N-phenyl-{gamma}-aminopropyl-trimethoxysilane (PAPTS). Cyclic voltammetry of the PAPTS monolayer in aniline-free aqueous electrolyte showed the typical shape of a surface-confined monomer, due to the oxidation of the aniline moieties. This process resulted in a two-dimensional polyaniline film with uniform thickness of 1.3 nm, as measured by atomic force microscopy. X-ray photoelectron and UV-visible spectroscopic techniques confirm the formation of a conjugated polymer film. The influence of the surface modification of ITO electrodes on polyaniline electrochemical deposition was also studied. The initial oxidation rate of aniline increased in the PAPTS-modified ITO electrodes, although the overall film formation rate was lower than that of unmodified ITO electrodes. The morphology of the electrodeposited polyaniline films on PAPTS-modified and unmodified ITO electrodes was studied by atomic force microscopy. Films of smaller grain were grown in the PAPTS-modified ITO as compared to films grown on unmodified ITO. A blocking effect due to the propyl spacer is proposed to explain the reduced electron transfer in PAPTS-modified electrodes.

  4. Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

    Science.gov (United States)

    Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

    2008-10-01

    The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

  5. Improvement of the electrochromic response of a low-temperature sintered dye-modified porous electrode using low-resistivity indium tin oxide nanoparticles

    International Nuclear Information System (INIS)

    Watanabe, Yuichi; Suemori, Kouji; Hoshino, Satoshi

    2016-01-01

    An indium tin oxide (ITO) nanoparticle-based porous electrode sintered at low temperatures was investigated as a transparent electrode for electrochromic displays (ECDs). The electrochromic (EC) response of the dye-modified ITO porous electrode sintered at 150 °C, which exhibited a generally low resistivity, was markedly superior to that of a conventional dye-modified TiO 2 porous electrode sintered at the same temperature. Moreover, the EC characteristics of the dye-modified ITO porous electrode sintered at 150 °C were better than those of the high-temperature (450 °C) sintered conventional dye-modified TiO 2 porous electrode. These improvements in the EC characteristics of the dye-modified ITO porous electrode are attributed to its lower resistivity than that of the TiO 2 porous electrodes. In addition to its sufficiently low resistivity attained under the sintering conditions required for flexible ECD applications, the ITO porous film had superior visible-light transparency and dye adsorption capabilities. We conclude that the process temperature, resistivity, optical transmittance, and dye adsorption capability of the ITO porous electrode make it a promising transparent porous electrode for flexible ECD applications.

  6. New method for preparation of polyoxometalate-capped gold nanoparticles, and their assembly on an indium-doped tin oxide electrode

    International Nuclear Information System (INIS)

    Cheng, Y.; Zheng, J.; Wang, Z.; Liu, L.; Wu, Y.; Yang, J.

    2011-01-01

    Functionalized gold nanoparticles capped with polyoxometalates were prepared by a simple photoreduction technique where phosphododecamolybdates serve as reducing reagents, photocatalysts, and as stabilizers. TEM images of the resulting gold nanoparticles show the particles to have a relative narrow size distribution. Monolayer and multilayer structures of the negatively charged capped gold nanoparticles were deposited on a poly(vinyl pyridine)-derivatized indium-doped tin oxide (ITO) electrode via the layer-by-layer technique. The surface plasmon resonance band of the gold nanoparticles displays a blue shift on the surface of the ITO electrode. This is due to the substrate-induced charge redistribution in the gold nanoparticles and a change in the electromagnetic coupling between the assembled nanoparticles. The modified electrode exhibits the characteristic electrochemical behavior of surface-confined phosphododecamolybdate and excellent electrocatalytic activity. The catalysis of the modified electrode towards the model compound iodate was systematically studied. The heterogeneous catalytic rate constant for the electrochemical reduction of iodate was determined by chronoamperometry to be ca. 1. 34 x 10 5 mol -1 .L.s -1 . The amperometric method gave a linear range from 2. 5 x 10 -6 to 1. 5 x 10 -3 M and a detection limit of 1. 0 x 10 -6 M. We believe that the functionalized gold nanoparticles prepared by this photoreduction technique are advantageous in terms of fabrication of sensitive and stable redox electrodes. (author)

  7. Direct imprinting of indium-tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor

    Science.gov (United States)

    Haga, Ken-ichi; Kamiya, Yuusuke; Tokumitsu, Eisuke

    2018-02-01

    We report on a new fabrication process for thin-film transistors (TFTs) with a new structure and a new operation principle. In this process, both the channel and electrode (source/drain) are formed simultaneously, using the same oxide material, using a single nano-rheology printing (n-RP) process, without any conventional lithography process. N-RP is a direct thermal imprint technique and deforms oxide precursor gel. To reduce the source/drain resistance, the material common to the channel and electrode is conductive indium-tin-oxide (ITO). The gate insulator is made of a ferroelectric material, whose high charge density can deplete the channel of the thin ITO film, which realizes the proposed operation principle. First, we have examined the n-RP conditions required for the channel and source/drain patterning, and found that the patterning properties are strongly affected by the cooling rate before separating the mold. Second, we have fabricated the TFTs as proposed and confirmed their TFT operation.

  8. Enhancing light out-coupling of organic light-emitting devices using indium tin oxide-free low-index transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yi-Hsiang; Lu, Chun-Yang; Tsai, Shang-Ta; Tsai, Yu-Tang; Chen, Chien-Yu; Tsai, Wei-Lung; Lin, Chun-Yu; Chang, Hong-Wei; Lee, Wei-Kai; Jiao, Min; Wu, Chung-Chih, E-mail: wucc@ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Electronics Engineering, and Innovative Photonics Advanced Research Center (i-PARC), National Taiwan University, Taipei 10617, Taiwan (China)

    2014-05-05

    With its increasing and sufficient conductivity, the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been capable of replacing the widely used but less cost-effective indium tin oxides (ITOs) as alternative transparent electrodes for organic light-emitting devices (OLEDs). Intriguingly, PEDOT:PSS also possesses an optical refractive index significantly lower than those of ITO and typical organic layers in OLEDs and well matching those of typical OLED substrates. Optical simulation reveals that by replacing ITO with such a low-index transparent electrode, the guided modes trapped within the organic/ITO layers in conventional OLEDs can be substantially suppressed, leading to more light coupled into the substrate than the conventional ITO device. By applying light out-coupling structures onto outer surfaces of substrates to effectively extract radiation into substrates, OLEDs using such low-index transparent electrodes achieve enhanced optical out-coupling and external quantum efficiencies in comparison with conventional OLEDs using ITO.

  9. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  10. Development of a reagentless electrochemiluminescent electrode for flow injection analysis using copolymerised luminol/aniline on nano-TiO2 functionalised indium-tin oxide glass.

    Science.gov (United States)

    Liu, Chao; Wei, Xiuhua; Tu, Yifeng

    2013-07-15

    In this study, a nano-structured copolymer of luminol/aniline (PLA) was deposited onto nano-TiO2-functionalised indium tin oxide (ITO)-coated glass by electrochemical polymerisation using cyclic voltammetry (CV). The resulting reagentless electrochemiluminescent (ECL) electrode (ECLode) can be used for flow injection analysis (FIA). The properties of the ECLode were characterised by CV, electrochemical impedance spectroscopy (EIS) and scanning electron microscopy (SEM). The ECLode has high background ECL emission as well as excellent stability and reproducibility, and yielding sensitive response towards target analytes. The ECL emissions of the ECLode were 50 times higher than PLA/ITO, and 500 times higher than polyluminol (PL)/ITO. The ECLode showed sensitive responses to reactive oxygen species (ROSs), permitting its application for determination of antioxidants by quenching. Under optimised conditions, an absolute detection limit of 69.9 pg was obtained for resveratrol, comparable to the highest levels of sensitivity achieved by other methods. Thus, the gross antioxidant content of red wine was determined, with satisfactory recoveries between 87.6% and 108.3%. These results suggest a bright future for the use of the ECLode for single-channel FIA due to its high sensitivity, accuracy and reproducibility. Copyright © 2013 Elsevier B.V. All rights reserved.

  11. An Optically-Transparent Aptamer-Based Detection System for Colon Cancer Applications Using Gold Nanoparticles Electrodeposited on Indium Tin Oxide

    Directory of Open Access Journals (Sweden)

    Mojgan Ahmadzadeh-Raji

    2016-07-01

    Full Text Available In this paper, a label-free aptamer based detection system (apta-DS was investigated for detecting colon cancer cells. For this purpose, we employed an aptamer specific to colon cancer cells like HCT116 expressing carcinoembryonic antigen (CEA on their surfaces. Capture aptamers were covalently immobilized on the surface of gold nanoparticles (GNPs through self-assembly monolayer of 11-mercaptoundecanoic acid (11-MUA activated with EDC (1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide/N-hydroxysuccinimide (NHS. The cyclic voltammetry (CV and chronopotentiometry (CP methods were used for electrodeposition of GNPs on the surface of indium tin oxide (ITO. In this work, the CV method was also used to demonstrate the conjugation of GNPs and aptamers and identify the cancer cell capturing events. Additionally, Field Emission Scanning Electron Microscopy (FE-SEM confirmed the deposition of GNPs on ITO and the immobilization of aptamer on the apta-DS. The electrodeposited GNPs played the role of nanoprobes for cancer cell targeting without losing the optical transparency of the ITO substrate. A conventional optical microscope also verified the detection of captured cancer cells. Based on this study’s results relying on electrochemical and optical microscopic methods, the proposed apta-DS is reliable and high sensitive with a LOD equal to 6 cell/mL for colon cancer detection.

  12. Effect of gold nanoparticle attached multi-walled carbon nanotube-layered indium tin oxide in monitoring the effect of paracetamol on the release of epinephrine

    International Nuclear Information System (INIS)

    Goyal, Rajendra N.; Rana, Anoop Raj Singh; Aziz, Md. Abdul; Oyama, Munetaka

    2011-01-01

    A gold nanoparticle attached multi-walled carbon nanotube-layered indium tin oxide (AuNP/MWNT/ITO) electrode has been used for monitoring the effect of paracetamol (PAR) on the release of epinephrine (EPI) in human urine. The modified electrode shows an excellent electrocatalytic activity for the oxidation of EPI and PAR with acceleration of electron transfer rate as compared to MWNT/ITO and AuNP/ITO. An apparent shift of the oxidative potential towards less positive potential with a marked increase in peak currents is observed in square wave voltammetry at AuNP/MWNT/ITO electrode. The calibration curves for the simultaneous determination of PAR and EPI showed an excellent linear response, ranging from 5.0 x 10 -9 mol L -1 to 80.0 x 10 -9 mol L -1 for both the compounds. The detection limits for the simultaneous determination of PAR and EPI were found to be 46 x 10 -10 mol L -1 and 42 x 10 -10 mol L -1 respectively. The proposed method has been successfully applied for the simultaneous determination of PAR and EPI in human urine. It is observed that gold nanoparticles attached with multi-wall carbon nanotube catalyze the oxidation of EPI and PAR.

  13. Effect of gold nanoparticle attached multi-walled carbon nanotube-layered indium tin oxide in monitoring the effect of paracetamol on the release of epinephrine

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Rajendra N., E-mail: rngcyfcy@iitr.ernet.in [Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Rana, Anoop Raj Singh [Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Aziz, Md. Abdul; Oyama, Munetaka [Department of Materials Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8520 (Japan)

    2011-05-05

    A gold nanoparticle attached multi-walled carbon nanotube-layered indium tin oxide (AuNP/MWNT/ITO) electrode has been used for monitoring the effect of paracetamol (PAR) on the release of epinephrine (EPI) in human urine. The modified electrode shows an excellent electrocatalytic activity for the oxidation of EPI and PAR with acceleration of electron transfer rate as compared to MWNT/ITO and AuNP/ITO. An apparent shift of the oxidative potential towards less positive potential with a marked increase in peak currents is observed in square wave voltammetry at AuNP/MWNT/ITO electrode. The calibration curves for the simultaneous determination of PAR and EPI showed an excellent linear response, ranging from 5.0 x 10{sup -9} mol L{sup -1} to 80.0 x 10{sup -9} mol L{sup -1} for both the compounds. The detection limits for the simultaneous determination of PAR and EPI were found to be 46 x 10{sup -10} mol L{sup -1} and 42 x 10{sup -10} mol L{sup -1} respectively. The proposed method has been successfully applied for the simultaneous determination of PAR and EPI in human urine. It is observed that gold nanoparticles attached with multi-wall carbon nanotube catalyze the oxidation of EPI and PAR.

  14. Electrochemical Characterization of Nanoporous Nickel Oxide Thin Films Spray-Deposited onto Indium-Doped Tin Oxide for Solar Conversion Scopes

    Directory of Open Access Journals (Sweden)

    Muhammad Awais

    2015-01-01

    Full Text Available Nonstoichiometric nickel oxide (NiOx has been deposited as thin film utilizing indium-doped tin oxide as transparent and electrically conductive substrate. Spray deposition of a suspension of NiOx nanoparticles in alcoholic medium allowed the preparation of uniform NiOx coatings. Sintering of the coatings was conducted at temperatures below 500°C for few minutes. This scalable procedure allowed the attainment of NiOx films with mesoporous morphology and reticulated structure. The electrochemical characterization showed that NiOx electrodes possess large surface area (about 1000 times larger than their geometrical area. Due to the openness of the NiOx morphology, the underlying conductive substrate can be contacted by the electrolyte and undergo redox processes within the potential range in which NiOx is electroactive. This requires careful control of the conditions of polarization in order to prevent the simultaneous occurrence of reduction/oxidation processes in both components of the multilayered electrode. The combination of the open structure with optical transparency and elevated electroactivity in organic electrolytes motivated us to analyze the potential of the spray-deposited NiOx films as semiconducting cathodes of dye-sensitized solar cells of p-type when erythrosine B was the sensitizer.

  15. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

    2014-01-01

    Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

  16. High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

    2014-09-01

    Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

  17. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

    International Nuclear Information System (INIS)

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-01-01

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10 −2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. (papers)

  18. Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

    Science.gov (United States)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

  19. The stannylphosphide anion reagent sodium bis(triphenylstannyl) phosphide: synthesis, structural characterization, and reactions with indium, tin, and gold electrophiles.

    Science.gov (United States)

    Cummins, Christopher C; Huang, Chao; Miller, Tabitha J; Reintinger, Markus W; Stauber, Julia M; Tannou, Isabelle; Tofan, Daniel; Toubaei, Abouzar; Velian, Alexandra; Wu, Gang

    2014-04-07

    Treatment of P4 with in situ generated [Na][SnPh3] leads to the formation of the sodium monophosphide [Na][P(SnPh3)2] and the Zintl salt [Na]3[P7]. The former was isolated in 46% yield as the crystalline salt [Na(benzo-15-crown-5)][P(SnPh3)2] and used to prepare the homoleptic phosphine P(SnPh3)3, isolated in 67% yield, as well as the indium derivative (XL)2InP(SnPh3)2 (XL = S(CH2)2NMe2), isolated in 84% yield, and the gold complex (Ph3P)AuP(SnPh3)2. The compounds [Na(benzo-15-crown-5)][P(SnPh3)2], P(SnPh3)3, (XL)2InP(SnPh3)2, and (Ph3P)AuP(SnPh3)2 were characterized using multinuclear NMR spectroscopy and X-ray crystallography. The bonding in (Ph3P)AuP(SnPh3)2 was dissected using natural bond orbital (NBO) methods, in response to the observation from the X-ray crystal structure that the dative P:→Au bond is slightly shorter than the shared electron-pair P-Au bond. The bonding in (XL)2InP(SnPh3)2 was also interrogated using (31)P and (13)C solid-state NMR and computational methods. Co-product [Na]3[P7] was isolated in 57% yield as the stannyl heptaphosphide P7(SnPh3)3, following salt metathesis with ClSnPh3. Additionally, we report that treatment of P4 with sodium naphthalenide in dimethoxyethane at 22 °C is a convenient and selective method for the independent synthesis of Zintl ion [Na]3[P7]. The latter was isolated as the silylated heptaphosphide P7(SiMe3)3, in 67% yield, or as the stannyl heptaphosphide P7(SnPh3)3 in 65% yield by salt metathesis with ClSiMe3 or ClSnPh3, respectively.

  20. Factors affecting the photovoltaic behavior of inverted polymer solar cells using various indium tin oxide electrodes modified by amines with simple chemical structures

    Energy Technology Data Exchange (ETDEWEB)

    Kusumi, Takuji [Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Kuwabara, Takayuki, E-mail: tkuwabar@se.kanazawa-u.ac.jp [Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Yamaguchi, Takahiro [Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Taima, Tetsuya [Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Takahashi, Kohshin, E-mail: ktakaha@se.kanazawa-u.ac.jp [Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan)

    2015-09-30

    In a glass–indium tin oxide (ITO)/amine/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C{sub 61} butyric acid methyl ester (PCBM)/poly(3,4-ethylenedioxylenethiophene):poly(4-styrene sulfonic acid) (PEDOT:PSS)/Au cell, which uses small molecule amine-modified ITO as the electron collection electrode, a light-soaking effect under irradiation of simulated sunlight was restrained considerably compared with in an ITO/P3HT:PCBM/PEDOT:PSS/Au cell containing bare ITO. That is, the time taken to arrive at a saturated V{sub oc} from the initial V{sub oc} became short when the ionization potential (I{sub P}) of ITO reduced by the amine modification, and consequently both of its saturated V{sub oc} and power conversion efficiency (PCE) improved. The I{sub P} decreased with an increase in the number (N) of amino groups in a single amine molecule, because the basic amino groups can efficiently neutralize any acidic hydroxyl groups on ITO through a multipoint interaction. The superior performance of the cell containing the amine-modified electrode with large N was perhaps because the energy mismatch formed by a contact between ITO and acceptor PCBM reduced, and consequently the rate of electron collection at ITO increased. - Highlights: • Surface-modification of ITO electrode with low molecular weight amines • Ionization potential of ITO was decreased by forming an electrical double layer. • Light-soaking effect has been observed by irradiating white light. • The light-soaking effect mainly improved the open-circuit photovoltage. • Open-circuit photovoltage was limited by ionization potential of amine-modified ITO.

  1. Factors affecting the photovoltaic behavior of inverted polymer solar cells using various indium tin oxide electrodes modified by amines with simple chemical structures

    International Nuclear Information System (INIS)

    Kusumi, Takuji; Kuwabara, Takayuki; Yamaguchi, Takahiro; Taima, Tetsuya; Takahashi, Kohshin

    2015-01-01

    In a glass–indium tin oxide (ITO)/amine/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C_6_1 butyric acid methyl ester (PCBM)/poly(3,4-ethylenedioxylenethiophene):poly(4-styrene sulfonic acid) (PEDOT:PSS)/Au cell, which uses small molecule amine-modified ITO as the electron collection electrode, a light-soaking effect under irradiation of simulated sunlight was restrained considerably compared with in an ITO/P3HT:PCBM/PEDOT:PSS/Au cell containing bare ITO. That is, the time taken to arrive at a saturated V_o_c from the initial V_o_c became short when the ionization potential (I_P) of ITO reduced by the amine modification, and consequently both of its saturated V_o_c and power conversion efficiency (PCE) improved. The I_P decreased with an increase in the number (N) of amino groups in a single amine molecule, because the basic amino groups can efficiently neutralize any acidic hydroxyl groups on ITO through a multipoint interaction. The superior performance of the cell containing the amine-modified electrode with large N was perhaps because the energy mismatch formed by a contact between ITO and acceptor PCBM reduced, and consequently the rate of electron collection at ITO increased. - Highlights: • Surface-modification of ITO electrode with low molecular weight amines • Ionization potential of ITO was decreased by forming an electrical double layer. • Light-soaking effect has been observed by irradiating white light. • The light-soaking effect mainly improved the open-circuit photovoltage. • Open-circuit photovoltage was limited by ionization potential of amine-modified ITO.

  2. Onset and evolution of laser induced periodic surface structures on indium tin oxide thin films for clean ablation using a repetitively pulsed picosecond laser at low fluence

    Science.gov (United States)

    Farid, N.; Dasgupta, P.; O’Connor, G. M.

    2018-04-01

    The onset and evolution of laser induced periodic surface structures (LIPSS) is of key importance to obtain clean ablated features on indium tin oxide (ITO) thin films at low fluences. The evolution of subwavelength periodic nanostructures on a 175 nm thick ITO film, using 10 ps laser pulses at a wavelength of 1032 nm, operating at 400 kHz, is investigated. Initially nanoblisters are observed when a single pulse is applied below the damage threshold fluence (0.45 J cm‑2) the size and distribution of nanoblisters are found to depend on fluence. Finite difference time domain (FDTD) simulations support the hypothesis that conductive nanoblisters can enhance the local intensity of the applied electromagnetic field. The LIPSS are observed to evolve from regions where the electric field enhancement has occurred; LIPSS has a perpendicular orientation relative to the laser polarization for a small number (5) pulses, the orientation of the periodic structures appears to rotate and evolve to become aligned in parallel with the laser polarization at approximately the same periodicity. These orientation effects are not observed at higher fluence—due to the absence of the nanoblister-like structures; this apparent rotation is interpreted to be due to stress-induced fragmentation of the LIPSS structure. The application of subsequent pulses leads to clean ablation. LIPSS are further modified into features of a shorter period when laser scanning is used. Results provide evidence that the formation of conductive nanoblisters leads to the enhancement of the applied electromagnetic field and thereby can be used to precisely control laser ablation on ITO thin films.

  3. Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

    International Nuclear Information System (INIS)

    Hwang, Man-Soo; Seob Jeong, Heui; Kim, Won Mok; Seo, Yong Woon

    2003-01-01

    Multilayer coatings consisting of metal layers sandwiched between transparent conducting oxide layers are widely used for flat panel display electrodes and electromagnetic shield coatings for plasma displays, due to their high electrical conductivity and light transmittance. The electrical and optical properties of these multilayer films depend largely on the surface characteristics of the transparent conducting oxide thin films. A smoother surface on the transparent conducting oxide thin films makes it easier for the metal layer to form a continuous film, thus resulting in a higher conductivity and visible light transmittance. Indium tin oxide (ITO) and zinc oxide (ZnO) films were co-deposited using a dual magnetron sputter and a bipolar pulse power supply to decrease the surface roughness of the transparent conducting oxide films. The symmetric pulse mode of the power supply was used to simultaneously sputter an In 2 O 3 (90 wt %) : SnO 2 (10 wt %) target and a ZnO target. We varied the duty of the pulses to control the ratio of ITO : ZnO in the thin films. The electrical and optical properties of the films were studied, and special attention was paid to the surface roughness and the crystallinity of the films. By co-depositing ITO and ZnO at a pulse duty ratio of ITO:ZnO=45:45 using a dual magnetron sputter and a bipolar pulse power supply, we were able to obtain amorphous transparent conducting oxide films with a very smooth surface which had a Zn-rich buffer layer under a In-rich surface layer. All of the films exhibited typical electrical and optical properties of transparent conducting oxide films deposited at room temperature

  4. A statistical approach for the optimization of indium tin oxide films used as a front contact in amorphous/crystalline silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Le, Anh Huy Tuan; Ahn, Shihyun; Kim, Sangho; Han, Sangmyeong; Kim, Sunbo; Park, Hyeongsik; Nguyen, Cam Phu Thi; Dao, Vinh Ai; Yi, Junsin

    2014-01-01

    Highlights: • The number of experiments was reduced by approximately 90% using Taguchi design. • The optimal condition of ITO films was obtained by Grey relational analysis. • Substrate temperature is dominant effect on opto-electrical properties of ITO films. • Using the optimal ITO films, the solar cell efficiency was absolutely increased by 1.750%. - Abstract: In heterojunction silicon with intrinsic thin layer (HIT) solar cells, the excellent opto-electrical properties of indium tin oxide (ITO) front contact play a critical role in attaining high efficiency. Therefore, in this study, we present and demonstrate an effective statistic approach based on combining Taguchi method and Grey relational analysis for the optimization of ITO films. A reduction in the number of experiments by approximately 90% is obtained by the Taguchi method through an orthogonal array. The reproduction of the effect of process parameters on single performance characteristic, however, is still ensured. In addition, an excellent trade-off between electrical and optical properties of ITO films was attained within the selected range of parameters by Grey relational analysis at power density of 0.685 W/cm 2 , working pressure of 0.4 Pa, substrate temperature of 200 °C, and post-annealing temperature of 200 °C in 30 min. Under optimal condition, the ITO films showed lowest electrical resistivity of 1.978 × 10 −4 Ω cm, and highest transmittance of 90.322%. The HIT solar cells using these ITO films as a front contact show highest efficiency of 16.616%, yielding a 1.750% absolute increase in efficiency compared to using ITO films with the initial condition. Furthermore, the analysis of variance (ANOVA) is determined to define the process parameters which have a dominant effect on the electrical and optical properties of ITO films. Based on ANOVA, we found that the substrate temperature was a key parameter which critically affects the opto-electrical properties of ITO films

  5. In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

    Science.gov (United States)

    Swint, Amy Lynn

    Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at

  6. Microwave exposure as a fast and cost-effective alternative of oxygen plasma treatment of indium-tin oxide electrode for application in organic solar cells

    Science.gov (United States)

    Soultati, Anastasia; Kostis, Ioannis; Papadimitropoulos, Giorgos; Zeniou, Angelos; Gogolides, Evangelos; Alexandropoulos, Dimitris; Vainos, Nikos; Davazoglou, Dimitris; Speliotis, Thanassis; Stathopoulos, Nikolaos A.; Argitis, Panagiotis; Vasilopoulou, Maria

    2017-12-01

    Pre-treatment methods are commonly employed to clean as well as to modify electrode surfaces. Many previous reports suggest that modifying the surface properties of indium tin oxide (ITO) by oxygen plasma treatment is a crucial step for the fabrication of high performance organic solar cells. In this work, we propose a fast and cost-effective microwave exposure step for the modification of the surface properties of ITO anode electrodes used in organic solar cells. It is demonstrated that a short microwave exposure improves the hydrophilicity and reduces the roughness of the ITO surface, as revealed by contact angle and atomic force microscopy (AFM) measurements, respectively, leading to a better quality of the PEDOT:PSS film coated on top of it. Similar results were obtained with the commonly used oxygen plasma treatment of ITO suggesting that microwave exposure is an effective process for modifying the surface properties of ITO with the benefits of low-cost, easy and fast processing. In addition, the influence of the microwave exposure of ITO anode electrode on the performance of an organic solar cell based on the poly(3-hexylthiophene):[6,6]-phenyl C70 butyric acid methyl ester (P3HT:PC70BM) blend is investigated. The 71% efficiency enhancement obtained in the microwave annealed-ITO based device as compared to the device with the as-received ITO was mainly attributed to the improvement in the short circuit current (J sc) and decreased leakage current caused by the reduced series and the increased shunt resistances and also by the higher charge generation efficiency, and the reduced recombination losses.

  7. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan; Tang, Xiaohong, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn; Li, Xianqiang [OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wang, Kai, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, 1088 Xueyuan Avenue, Shenzhen 518055 (China); Olivier, Aurelien [CINTRA UMI 3288, School of Electrical and Electronic Engineering, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553 Singapore (Singapore)

    2016-03-07

    After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.

  8. Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

    Science.gov (United States)

    Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

    2014-04-01

    The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

  9. Phase diagram and structural evolution of tin/indium (Sn/In) nanosolder particles: from a non-equilibrium state to an equilibrium state.

    Science.gov (United States)

    Shu, Yang; Ando, Teiichi; Yin, Qiyue; Zhou, Guangwen; Gu, Zhiyong

    2017-08-31

    A binary system of tin/indium (Sn/In) in the form of nanoparticles was investigated for phase transitions and structural evolution at different temperatures and compositions. The Sn/In nanosolder particles in the composition range of 24-72 wt% In were synthesized by a surfactant-assisted chemical reduction method under ambient conditions. The morphology and microstructure of the as-synthesized nanoparticles were analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). HRTEM and SAED identified InSn 4 and In, with some Sn being detected by XRD, but no In 3 Sn was observed. The differential scanning calorimetry (DSC) thermographs of the as-synthesized nanoparticles exhibited an endothermic peak at around 116 °C, which is indicative of the metastable eutectic melting of InSn 4 and In. When the nanosolders were subjected to heat treatment at 50-225 °C, the equilibrium phase In 3 Sn appeared while Sn disappeared. The equilibrium state was effectively attained at 225 °C. A Tammann plot of the DSC data of the as-synthesized nanoparticles indicated that the metastable eutectic composition is about 62% In, while that of the DSC data of the 225 °C heat-treated nanoparticles yielded a eutectic composition of 54% In, which confirmed the attainment of the equilibrium state at 225 °C. The phase boundaries estimated from the DSC data of heat-treated Sn/In nanosolder particles matched well with those in the established Sn-In equilibrium phase diagram. The phase transition behavior of Sn/In nanosolders leads to a new understanding of binary alloy particles at the nanoscale, and provides important information for their low temperature soldering processing and applications.

  10. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  11. Generation of laser-induced periodic surface structures in indium-tin-oxide thin films and two-photon lithography of ma-N photoresist by sub-15 femtosecond laser microscopy for liquid crystal cell application

    Science.gov (United States)

    Klötzer, Madlen; Afshar, Maziar; Feili, Dara; Seidel, Helmut; König, Karsten; Straub, Martin

    2015-03-01

    Indium-tin-oxide (ITO) is a widely used electrode material for liquid crystal cell applications because of its transparency in the visible spectral range and its high electrical conductivity. Important examples of applications are displays and optical phase modulators. We report on subwavelength periodic structuring and precise laser cutting of 150 nm thick indium-tin-oxide films on glass substrates, which were deposited by magnetron reactive DC-sputtering from an indiumtin target in a low-pressure oxygen atmosphere. In order to obtain nanostructured electrodes laser-induced periodic surface structures with a period of approximately 100 nm were generated using tightly focused high-repetition rate sub-15 femtosecond pulsed Ti:sapphire laser light, which was scanned across the sample by galvanometric mirrors. Three-dimensional spacers were produced by multiphoton photopolymerization in ma-N 2410 negative-tone photoresist spin-coated on top of the ITO layers. The nanostructured electrodes were aligned in parallel to set up an electrically switchable nematic liquid crystal cell.

  12. Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of density of interstitial oxygen for silicon heterojunction solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Shihyun; Kim, Sunbo; Dao, Vinh Ai; Lee, Seungho; Iftiquar, S.M. [College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College, Ulsan, 680-749 (Korea, Republic of); Hussain, Shahzada Qamar [Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Park, Hyeongsik; Lee, Jaehyeong [College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Lee, Youngseok [Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Cho, Jaehyun [College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Kim, Sangho [Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of)

    2013-11-01

    An indium tin oxide (ITO) film with low carrier concentration (n), high mobility (μ) and high work function (Φ{sub ITO}) is a beneficial material for the front electrode in heterojunction silicon (HJ) solar cells due to its low free-carrier absorption in the near-infrared wavelength and low Schottky barrier height at the ITO/emitter-layer front contact. This low free-carrier absorption as well as the low Schottky barrier height increase the open-circuit voltage (V{sub oc}) and the short-circuit current density (J{sub sc}), which in turn increases the overall cell efficiency (η). Hence, ITO films with lower n, higher μ and higher Φ{sub ITO} were prepared by controlling the density of the interstitial oxygen [O{sub i}] in the films and used as anti-reflection electrodes in HJ solar cells. With increasing [O{sub i}] in the ITO, the preferential orientation of the (222) crystalline plane became more dominant. The Φ{sub ITO} and μ increased from 4.87 eV and 38.9 cm{sup 2} V{sup −1} s{sup −1} to 5.04 eV and 48.79 cm{sup 2} V{sup −1} s{sup −1}, respectively, whereas n decreased from 4.7 × 10{sup 20} cm{sup −3} to 2.8 × 10{sup 20} cm{sup −3}. We attribute these changes to the chemisorbed oxygen into the ITO films, while the decrease of n is due to the ability of interstitial oxygen to capture electron, and the increase of μ is due to the reduction in free-carrier scattering. These ITO films were used to fabricate HJ solar cells. As [O{sub i}] in the ITO film increased, the device performance improved and the best cell performance was obtained with V{sub oc} of 714 mV, J{sub sc} 34.79 mA/cm{sup 2} and η of 17.82%. By computer simulation, we found that the higher Φ{sub ITO} and μ but lower n were responsible for the enhanced cell performance. The cell performance, however, deteriorated due to poor film properties when [O{sub i}] exceeded concentration limit from 3.2 × 10{sup 20} cm{sup −3}. - Highlights: • The carrier concentration (n) decreases

  13. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    Science.gov (United States)

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  14. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    International Nuclear Information System (INIS)

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  15. Monitoring of morphology and physical properties of cultured cells using a micro camera and a quartz crystal with transparent indium tin oxide electrodes after injections of glutaraldehyde and trypsin

    International Nuclear Information System (INIS)

    Kang, Hyen-Wook; Ida, Kazumi; Yamamoto, Yuji; Muramatsu, Hiroshi

    2008-01-01

    For investigating the effects of chemical stimulation to cultured cells, we have developed a quartz crystal sensor system with a micro charge-coupled device (CCD) camera that enables microphotograph imaging simultaneously with quartz crystal measurement. Human hepatoma cell line (HepG2) cells were cultured on the quartz crystal through a collagen film. The electrode of the quartz crystal was made of indium tin oxide (ITO) transparent electrodes that enable to obtain a transparent mode photograph. Glutaraldehyde and trypsin were injected to the chamber of the cells, respectively. The response of the quartz crystal was monitored and microphotographs were recorded, and the resonance frequency and resonance resistance were analyzed with an F-R diagram that plotted the resonance frequency and resonance resistance. In the case of the glutaraldehyde injection, the cells responded in two steps that included the fast response of the cross-linking reaction and the successive internal change in the cells. In the case of the trypsin injection, the responses included two processes. In the first step, cell adhesion factors were cleaved and the cell structure became round, and in the next step, the cells were deposited on the quartz crystal surface and the surface of the cells was directly in contact with the quartz crystal surface

  16. Advanced device for testing the electrical behavior of conductive coatings on flexible polymer substrates under oscillatory bending: comparison of coatings of sputtered indium-tin oxide and poly3,4ethylenedioxythiophene

    International Nuclear Information System (INIS)

    Königer, Tobias; Münstedt, Helmut

    2008-01-01

    A special device was designed and set up to investigate the electrical behavior of conductive layers on flexible substrates under oscillatory bending. The resistance of conductive coatings can be measured during various oscillatory bending conditions. The bending radius, the amplitude and the frequency can be set to well-defined values. Furthermore, the setup allows us to apply tensile or compressive stress to the coating as well as both stresses alternately. Thus, various bending loads occurring in printable electronics applications can be simulated to investigate the electrical reliability of conductive coatings. In addition, it is possible to simulate different environmental conditions during oscillatory bending by running the device in an environmental chamber. Characterizations of the electrical behavior under oscillatory bending were carried out on commercially available polyethyleneterephthalate (PET) films sputtered with indium-tin oxide (ITO) and coated with poly3,4ethylenedioxythiophene (PEDOT). For coatings of sputtered ITO, a dramatic increase of the resistance is observed for bending radii smaller than 14 mm due to cracks spanning the whole sample width. The higher the amplitude, the more pronounced is the increase of the resistance. Coatings of PEDOT show high stability under oscillatory bending. There is no change in resistance observed for all bending radii and amplitudes applied over a large number of cycles

  17. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

    International Nuclear Information System (INIS)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; Andrés, A. de; Prieto, C.

    2015-01-01

    Highlights: • ITO deposition on glass and PET at room temperature by using H. • High transparency and low resistance is obtained by tuning the H. • The figure of merit for ITO films on PET becomes maximal for thickness near 100 nm. - Abstract: The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H 2 in the gas mixture of H 2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H 2 /(Ar + H 2 ) ratio in the range of 0.3–0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Φ TC = T 10 /R S , than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices

  18. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

    Science.gov (United States)

    Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

    2018-02-01

    The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

  19. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

    Science.gov (United States)

    Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

    2018-01-22

    The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

  20. Elaboration of modified poly(NiII-DHS films as electrodes by the electropolymerization of Ni(II-[5,5′-dihydroxysalen] onto indium tin oxide surface and study of their electrocatalytic behavior toward aliphatic alcohols

    Directory of Open Access Journals (Sweden)

    Ali Ourari

    2017-11-01

    Full Text Available Nickel(II-DHS complex was obtained from N,N′-bis(2,5-dihydroxybenzylidene-1,2-diaminoethane (H2DHS ligand and nickel acetate tetrahydrated in ethanolic solution with stirring under reflux. This complex, dissolved in an alkaline solution, was oxidized to form electroactive films strongly adhered on the ITO (indium tin oxide electrode surface. In this alkaline solution, the poly-[NiII-DHS]/ITO films showed the typical voltammetric response of (Ni2+/Ni3+ redox couple centers which are immobilized in the polymer-film. The modified electrodes (MEs obtained were also characterized by several techniques such as scanning electronic microscopy, atomic force microscopy and electrochemical methods. The electrocatalytic behavior of these MEs toward the oxidation reaction of some aliphatic alcohols such as methanol, ethanol, 2-Methyl-1-propanol and isopropanol was investigated. The voltammograms recorded with these alcohols showed good electrocatalytic efficiency. The electrocatalytic currents were at least 80 times higher than those obtained for the oxidation of methanol on electrodes modified with nickel hydroxide films in alkaline solutions. We noticed that these electrocatalytic currents are proportional to the concentration of methanol (0.050–0.30 μM. In contrast, those recorded for the oxidation of other aliphatic short chain alcohols such as ethanol, 2-methyl-1-propanol and isopropanol are rather moderately weaker. In all cases the electrocatalytic currents presented a linear dependence with the concentration of alcohol. These modified electrodes could be applied as alcohol sensors.

  1. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    International Nuclear Information System (INIS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-01-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  2. Practical and highly sensitive elemental analysis for aqueous samples containing metal impurities employing electrodeposition on indium-tin oxide film samples and laser-induced shock wave plasma in low-pressure helium gas.

    Science.gov (United States)

    Kurniawan, Koo Hendrik; Pardede, Marincan; Hedwig, Rinda; Abdulmadjid, Syahrun Nur; Lahna, Kurnia; Idris, Nasrullah; Jobiliong, Eric; Suyanto, Hery; Suliyanti, Maria Margaretha; Tjia, May On; Lie, Tjung Jie; Lie, Zener Sukra; Kurniawan, Davy Putra; Kagawa, Kiichiro

    2015-09-01

    We have conducted an experimental study exploring the possible application of laser-induced breakdown spectroscopy (LIBS) for practical and highly sensitive detection of metal impurities in water. The spectrochemical measurements were carried out by means of a 355 nm Nd-YAG laser within N2 and He gas at atmospheric pressures as high as 2 kPa. The aqueous samples were prepared as thin films deposited on indium-tin oxide (ITO) glass by an electrolysis process. The resulting emission spectra suggest that concentrations at parts per billion levels may be achieved for a variety of metal impurities, and it is hence potentially feasible for rapid inspection of water quality in the semiconductor and pharmaceutical industries, as well as for cooling water inspection for possible leakage of radioactivity in nuclear power plants. In view of its relative simplicity, this LIBS equipment offers a practical and less costly alternative to the standard use of inductively coupled plasma-mass spectrometry (ICP-MS) for water samples, and its further potential for in situ and mobile applications.

  3. Biological effects of nanoparticulate materials

    International Nuclear Information System (INIS)

    Soto, K.F.; Carrasco, A.; Powell, T.G.; Murr, L.E.; Garza, K.M.

    2006-01-01

    A range of morphologically nanoparticulate materials including Ag, NiO, TiO 2 , multiwall carbon nanotubes, and chrysotile asbestos have been characterized by transmission electron microscopy. All but the TiO 2 (anatase and rutile) were observed to exhibit some cytotoxicity at concentrations of 5 μg/ml for a murine macrophage cell line as a respiratory response model. Silver exhibits interesting systemic differences for animal and human toxicity, especially in light of its nanoparticulate materials, and should be avoided even if there is no detectable in vitro cytotoxic response, as a prudent approach to their technological applications

  4. Germanium and indium

    Science.gov (United States)

    Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    southeastern Yunnan Province), and the Dabaoshan SEDEX deposit (located in the Nanling region of China) contain indium-enriched sphalerite. Another major potential source of indium occurs in the polymetallic tin-tungsten belt in the Eastern Cordillera of the Andes Mountains of Bolivia. Deposits there occur as dense arrays of narrow, elongate, indium-enriched tin oxide-polymetallic sulfide veins in volcanic rocks and porphyry stocks.Information about the behavior of germanium and indium in the environment is limited. In surface weathering environments, germanium and indium may dissolve from host minerals and form complexes with chloride, fluoride, hydroxide, organic matter, phosphate, or sulfate compounds. The tendency for germanium and indium to be dissolved and transported largely depends upon the pH and temperature of the weathering solutions. Because both elements are commonly concentrated in sulfide minerals, they can be expected to be relatively mobile in acid mine drainage where oxidative dissolution of sulfide minerals releases metals and sulfuric acid, resulting in acidic pH values that allow higher concentrations of metals to be dissolved into solution.

  5. Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

    International Nuclear Information System (INIS)

    Son, Phil Kook; Kim, Tae Hyung; Choi, Suk Won; Gwag, Jin Seog

    2012-01-01

    The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indium tinoxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 .deg. C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

  6. Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

    Science.gov (United States)

    Huang, Qinglan

    The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and

  7. Gel nano-particulates against radioactivity

    International Nuclear Information System (INIS)

    Deroin, Ph.

    2004-01-01

    The Argonne research center (USA) has developed a 'super-gel' compound, a polymer close to those used in baby's diapers, which can reach a 90% efficiency in the radioactive decontamination of porous materials, like bricks or concrete. The contaminated materials are sprayed with a mixture of polymer gel and wetting agent with nano-particulates in suspension. Under the action of the wetting agent, radioactivity migrates from the pores to the gel and is trapped by the nano-particulates. The drying and recycling of the gel allows to reduce the volume of radioactive wastes. Short paper. (J.S.)

  8. Nanoparticulation improves bioavailability of Erlotinib.

    Science.gov (United States)

    Yang, Kyung Mi; Shin, In Chul; Park, Joo Won; Kim, Kab-Sig; Kim, Dae Kyong; Park, Kyungmoon; Kim, Kunhong

    2017-09-01

    Nanoparticulation using fat and supercritical fluid (NUFS TM ) is a drug delivery platform technology enabling efficient and effective formulation of poorly soluble drugs. We performed experiments to examine whether NUFS™ could improve poor bioavailability and reduce fed-fasted bioavailability variances of erlotinib (Ert). NUFS-Ert was prepared using NUFS™ technology; its physical properties were characterized, and drug release was measured. Furthermore, in vitro and in vivo efficacy tests and pharmacokinetic analysis were performed. NUFS-Ert nanoparticles had an average size of 250 nm and were stable for 2 months at 40 °C, 4 °C, and room temperature. The dissolution rate of NUFS-Ert increased in bio-relevant dissolution media. NUFS-Ert was more potent in inhibiting EGF signaling and in suppressing the proliferation of A549, a human non-small cell lung cancer cell line. Furthermore, A549 xenografts in BALB/c nude mice treated with NUFS-Ert regressed more efficiently than those in the mice treated with vehicle or Tarceva ® . In addition, experimental lung metastasis was more efficiently inhibited by NUFS-Ert than by Tarceva ® . The relative bioavailability of NUFS-Ert compared with that of Tarceva ® was 550% and the ratio of the area under the concentration-time curve (AUC) of fed state to the AUC of fasted state was 1.8 for NUFS-Ert and 5.8 for Tarceva ® . NUFS-Ert could improve poor bioavailability and reduce fed-fasted bioavailability variances of Ert. NUFS-Ert was more efficacious than Tarceva ® .

  9. Photoluminescence of monovalent indium centres in phosphate glass

    OpenAIRE

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

  10. Stability aspects of hydrogen-doped indium oxide

    OpenAIRE

    Jost, Gabrielle; Hamri, Alexander Nordin; Köhler, Florian; Hüpkes, Jürgen

    2015-01-01

    Transparent conductive oxides play an important role as contact layers in various opto-electronic devices such as solar cells or LEDs. Whilst crystalline materials e.g. zinc oxide (ZnO), tin oxide (Sn2O3) or tin doped indium oxide (ITO) have already been vastly investigated and applied [1] hydrogen doped indium oxide (In2O3:H) entered the scene a while ago as a new material with a superior trade-off between electrical and optical performance. In2O3:H is commonly deposited at room temperature...

  11. Development of Mucoadhesive Nanoparticulate System of Ebastine ...

    African Journals Online (AJOL)

    Purpose: To prepare and evaluate mucoadhesive nanoparticulate system of ebastine for nasal .... tripolyphosphate solution drop by drop to 3 ml of ... at an accelerating voltage of 20 KV before ..... i.e., around 1.0, then the size distribution of.

  12. Development of Mucoadhesive Nanoparticulate System of Ebastine ...

    African Journals Online (AJOL)

    Purpose: To prepare and evaluate mucoadhesive nanoparticulate system of ebastine for nasal drug delivery. Methods: The nanoparticles were prepared by ionic gelation method using drug-chitosan weight ratios 1:1, 1:2 and 1:3, and incorporating 0.5 or 0.7 % w/v sodium tripolyphosphate (STPP) and poloxamer 407.

  13. Nanoparticulate delivery systems for antiviral drugs.

    Science.gov (United States)

    Lembo, David; Cavalli, Roberta

    2010-01-01

    Nanomedicine opens new therapeutic avenues for attacking viral diseases and for improving treatment success rates. Nanoparticulate-based systems might change the release kinetics of antivirals, increase their bioavailability, improve their efficacy, restrict adverse drug side effects and reduce treatment costs. Moreover, they could permit the delivery of antiviral drugs to specific target sites and viral reservoirs in the body. These features are particularly relevant in viral diseases where high drug doses are needed, drugs are expensive and the success of a therapy is associated with a patient's adherence to the administration protocol. This review presents the current status in the emerging area of nanoparticulate delivery systems in antiviral therapy, providing their definition and description, and highlighting some peculiar features. The paper closes with a discussion on the future challenges that must be addressed before the potential of nanotechnology can be translated into safe and effective antiviral formulations for clinical use.

  14. Bioavailability of nanoparticulate hematite to Arabidopsis thaliana

    International Nuclear Information System (INIS)

    Marusenko, Yevgeniy; Shipp, Jessie; Hamilton, George A.; Morgan, Jennifer L.L.; Keebaugh, Michael; Hill, Hansina; Dutta, Arnab; Zhuo, Xiaoding; Upadhyay, Nabin; Hutchings, James; Herckes, Pierre; Anbar, Ariel D.; Shock, Everett; Hartnett, Hilairy E.

    2013-01-01

    The environmental effects and bioavailability of nanoparticulate iron (Fe) to plants are currently unknown. Here, plant bioavailability of synthesized hematite Fe nanoparticles was evaluated using Arabidopsis thaliana (A. thaliana) as a model. Over 56-days of growing wild-type A. thaliana, the nanoparticle-Fe and no-Fe treatments had lower plant biomass, lower chlorophyll concentrations, and lower internal Fe concentrations than the Fe-treatment. Results for the no-Fe and nanoparticle-Fe treatments were consistently similar throughout the experiment. These results suggest that nanoparticles (mean diameter 40.9 nm, range 22.3–67.0 nm) were not taken up and therefore not bioavailable to A. thaliana. Over 14-days growing wild-type and transgenic (Type I/II proton pump overexpression) A. thaliana, the Type I plant grew more than the wild-type in the nanoparticle-Fe treatment, suggesting Type I plants cope better with Fe limitation; however, the nanoparticle-Fe and no-Fe treatments had similar growth for all plant types. -- Highlights: ► Iron nanoparticles were synthesized and assessed for bioavailability to Arabidopsis. ► Arabidopsis grew better in the presence of EDTA-bound iron than nanoparticulate iron. ► Arabidopsis grew the same in the presence of nanoparticulate iron compared to no iron. -- Synthesized iron nanoparticles were not bioavailable to Arabidopsis thaliana in agar nutrient media

  15. Gel nano-particulates against radioactivity; Des nanoparticules en gel contre la radioactivite

    Energy Technology Data Exchange (ETDEWEB)

    Deroin, Ph

    2004-11-01

    The Argonne research center (USA) has developed a 'super-gel' compound, a polymer close to those used in baby's diapers, which can reach a 90% efficiency in the radioactive decontamination of porous materials, like bricks or concrete. The contaminated materials are sprayed with a mixture of polymer gel and wetting agent with nano-particulates in suspension. Under the action of the wetting agent, radioactivity migrates from the pores to the gel and is trapped by the nano-particulates. The drying and recycling of the gel allows to reduce the volume of radioactive wastes. Short paper. (J.S.)

  16. Proton microprobe study of tin-polymetallic deposits

    Energy Technology Data Exchange (ETDEWEB)

    Murao, S. [Geological Survey of Japan, Tsukuba, Ibaraki (Japan); Sie, S.H.; Suter, G.F. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1996-12-31

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs.

  17. Proton microprobe study of tin-polymetallic deposits

    Energy Technology Data Exchange (ETDEWEB)

    Murao, S [Geological Survey of Japan, Tsukuba, Ibaraki (Japan); Sie, S H; Suter, G F [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1997-12-31

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs.

  18. Proton microprobe study of tin-polymetallic deposits

    International Nuclear Information System (INIS)

    Murao, S.; Sie, S.H.; Suter, G.F.

    1996-01-01

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs

  19. Use of and occupational exposure to indium in the United States.

    Science.gov (United States)

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  20. An advanced case of indium lung disease with progressive emphysema.

    Science.gov (United States)

    Nakano, Makiko; Tanaka, Akiyo; Hirata, Miyuki; Kumazoe, Hiroyuki; Wakamatsu, Kentaro; Kamada, Dan; Omae, Kazuyuki

    2016-09-30

    To report the occurrence of an advanced case of indium lung disease with severely progressive emphysema in an indium-exposed worker. A healthy 42-year-old male smoker was employed to primarily grind indium-tin oxide (ITO) target plates, exposing him to indium for 9 years (1998-2008). In 2004, an epidemiological study was conducted on indium-exposed workers at the factory in which he worked. The subject's serum indium concentration (In-S) was 99.7 μg/l, while his serum Krebs von den Lungen-6 level was 2,350 U/ml. Pulmonary function tests showed forced vital capacity (FVC) of 4.17 l (91.5% of the JRS predicted value), forced expiratory volume in 1 s (FEV 1 ) of 3.19 l (80.8% of predicted), and an FEV 1 -to-FVC ratio of 76.5%. A high-resolution chest computed tomography (HRCT) scan showed mild interlobular septal thickening and mild emphysematous changes. In 2008, he was transferred from the ITO grinding workplace to an inspection work section, where indium concentrations in total dusts had a range of 0.001-0.002 mg/m 3 . In 2009, the subject's In-S had increased to 132.1 μg/l, and pulmonary function tests revealed obstructive changes. In addition, HRCT scan showed clear evidence of progressive lung destruction with accompanying severe centrilobular emphysema and interlobular septal thickening in both lung fields. The subject's condition gradually worsened, and in 2015, he was registered with the Japan Organ Transplant Network for lung transplantation (LTx). Heavy indium exposure is a risk factor for emphysema, which can lead to a severity level that requires LTx as the final therapeutic option.

  1. Dynamics of implanted muons at low temperatures in white tin

    International Nuclear Information System (INIS)

    Solt, G.; Zimmermann, U.; Herlach, D.

    2008-01-01

    The low temperature lattice site of the implanted μ + particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2 + was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T=48±2K, resulting in complete delocalization near 60 K. The activation energy for hopping, E a =113±15meV, is substantially higher than that found previously for the equally tetragonal indium

  2. Comparative cytotoxicity assessments of some manufactured and anthropogenic nanoparticulate materials

    Science.gov (United States)

    Soto, Karla Fabiola

    Due to increasing diversity of newly engineered nanoparticles, it is important to consider the hazards of these materials. Very little is known regarding the potential toxicity of relatively new nanomaterials. However, beginning with several historical accounts of nanomaterials applications---chrysotile asbestos and silver---it was assumed that these examples would provide some awareness and guidelines for future nanomaterial and nanotechnology applications, especially health effects. In this study in vitro assays were performed on a murine alveolar macrophage cell line (RAW 264.7), human alveolar macrophage cell line (THB-1), and human epithelial lung cell line (A549) to assess the comparative cytotoxicity of a wide range of manufactured (Ag, TiO2, Fe2O3, Al2O3, ZrO2, black carbon, two different types of multiwall structures and chrysotile asbestos as the toxicity standard) and anthropogenic nanoparticulates. There are several parameters of nanoparticulates that are considered to trigger an inflammatory response (particularly respiratory) or cause toxicity. These parameters include: particle size, shape, specific surface area, transition metals in particulates, and organic compounds. Therefore, a wide variety of manufactured and anthropogenic nanoparticulates having different morphologies, sizes, specific surface area and chemistries as noted were tested. To determine the nanoparticulates' size and morphology, they were characterized by transmission electron microscopy, where it was observed that the commercial multiwall carbon nanotube aggregate had an identical morphology to chrysotile asbestos and combustion-formed carbon nanotubes, i.e.; those that form from natural gas combustion. Light optical microscopy was used to determine cell morphology upon exposure to nanoparticulates as an indication of cell death. Also, the polycyclic aromatic hydrocarbon (PAH) content of the collected nanoparticulates was analyzed and correlated with cytotoxic responses. For

  3. Effect of stress on the superconducting transition temperature in indium, indium-alloy, tin, and tin-alloy whisker samples

    International Nuclear Information System (INIS)

    Cook, J.W. Jr.; Davis, W.T.; Chandler, J.H.; Skove, M.J.

    1977-01-01

    The dependence of the superconducting transition temperature (T/sub c/) on stress (sigma) for pure In and Sn samples was found to be in qualitative agreement with earlier work. For convenience T/sub c/ is expressed as a function of the experimentally measured strain (epsilon), which is proportional to sigma. The effect of alloying on the initial dependence of the T/sub c/-vs-epsilon curves, (per. delta T/sub c//per. delta epsilon)/sub epsilon = 0/ = eta, was quite different for the In and Sn alloys. The In samples were alloyed with a maximum of 4.8 at.% Tl, 7.9 at.% Sn, and 6.7 at.% Pd; the Sn samples were alloyed with a maximum of 0.3 at.% Cd, 6.0 at.% In, 0.3 at.% Sb, and 2.2 at.% Bi. The addition of impurities had a large effect on eta for the In alloys, with eta reversing sign for some Sn and Pb alloy contents (chi). The T/sub c/-vs-epsilon curves also became nonlinear for some chi. The possible relationship of the In alloy results to changes in the Fermi surface due to the addition of impurities is discussed. For the Sn alloy samples, there was no change in eta with any impurity. The change in room-temperature resistivity with strain was also measured. There was only a slight decrease in the dependence of resistivity on strain for the In--Sn and In--Pb data and no effect on the In--Tl or Sn alloy data

  4. Labilities of aqueous nanoparticulate metal complexes in environmental speciation analysis

    NARCIS (Netherlands)

    Town, R.M.; Leeuwen, van H.P.

    2014-01-01

    An inherent property of a dispersion of charged nanoparticles is that their charges and reactive sites are spatially confined to the particle body which is at a different potential from that in the bulk medium. This feature has important consequences for the reactivity of nanoparticulate

  5. Plastic deformation of indium nanostructures

    International Nuclear Information System (INIS)

    Lee, Gyuhyon; Kim, Ju-Young; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2011-01-01

    Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

  6. Speciation and Health Risks of Atmospheric Nanoparticulates

    Science.gov (United States)

    Nguyen, Kennedy

    Exposure to air pollution causes several adverse health effects such as asthma, respiratory disease, cardiovascular disease, cancer, and premature death; and the San Joaquin Valley is one of the most heavily polluted regions in the US. The mountains that surround the valley allow air pollution, including particulate matter, to remain stagnant, prolonging the exposure of valley populations to it. The primary sources of particulate matter for this region are aluminosilicate dust from agricultural activities, and soot emissions from diesel trucks and vehicular traffic. A substantial fraction of emitted material is nanoparticulate matter (testing in cell culture studies, and correlation of particulate properties and sources with their negative health impacts. These results can help identify the sources of air pollution to prioritize for mitigation for the greatest health benefit. In addition, further chemical speciation can help monitor the results of such mitigation efforts. Here, natural particulate matter samples from Merced and Fresno, two cities in the San Joaquin Valley, were analyzed. Ultrafine particles present were 40 to 50 nm in diameter and mostly composed of aluminum, silicon, oxygen, and iron hydroxide. XAS data confirmed the presence of the aluminosilicate as smectite clay and the iron hydroxide as ferrihydrite. Furthermore, a chemical speciation study investigated industrial emissions of air particulate matter. Samples were analyzed using electron microscopy for elemental composition and size distribution, and found to contain fine metal particulates (lead and iron) that can lead to lung inflammation. From characterization data, in order to create a simplified proxy particle system for cell culture studies, amorphous silica particles were synthesized using a modified Stober Synthesis and coated with iron hydroxide. A range of iron hydroxide concentrations (0.06 to 1.63 mmol of iron per gram of silica) were used to test the effect of iron contamination on

  7. Patterning of nanoparticulate transparent conductive ITO films using UV light irradiation and UV laser beam writing

    International Nuclear Information System (INIS)

    Solieman, A.; Moharram, A.H.; Aegerter, M.A.

    2010-01-01

    Indium tin oxide (ITO) thin film is one of the most widely used as transparent conductive electrodes in all forms of flat panel display (FPD) and microelectronic devices. Suspension of already crystalline conductive ITO nanoparticles fully dispersed in alcohol was spun, after modifying with coupling agent, on glass substrates. The low cost, simple and versatile traditional photolithography process without complication of the photoresist layer was used for patterning ITO films. Using of UV light irradiation through mask and direct UV laser beam writing resulted in an accurate linear, sharp edge and very smooth patterns. Irradiated ITO film showed a high transparency (∼85%) in the visible region. The electrical sheet resistance decrease with increasing time of exposure to UV light and UV laser. Only 5 min UV light irradiation is enough to decrease the electrical sheet resistance down to 5 kΩ□.

  8. Secondary indium production from end-of-life liquid crystal displays

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Alessia; Rocchetti, Laura; Fonti, Viviana; Ruello, Maria Letizia; Beolchini, Francesca [Universita Politecnica of Marche, DISVA, Via Brecce Bianche, 60131 Ancona (Italy)

    2016-12-15

    In 2014, the European Union identified 20 raw materials critical for economic importance and high supply risk. Indium, used in several innovative technologies, is among such critical raw materials. Generally, it is mined as a by-product of zinc from a mineral named sphalerite, with a concentration between 1 and 100 ppm. Currently, the largest producer of indium is China and about 84% of the worldwide indium consumption is used for liquid crystal display (LCD) production, in particular to form an indium-tin-oxide (ITO) film with transparent conductor properties. The fast evolution of LCD technologies caused a double effect: the growth of indium demand and an increase of waste electrical and electronic equipment (WEEE). Considering these two factors, the aim of this study is to make the end-of-life LCDs a secondary indium resource. With this purpose, an indium recovery process was developed carrying out an acidic leaching, followed by a zinc cementation. The first step allowed a complete indium extraction using 2M sulfuric acid at 80 C for 10 min. The problem of low indium concentration in the scraps (around 150 ppm) was overcome using a cross-current configuration in the leaching phase that allowed an increase of metal concentration and a decrease of reagents consumption. An indium recovery higher than 90% was obtained in the final cementation step, using 5 g/L of zinc powder at pH 3 and 55 C for 10 min. Considering its high efficiency, this process is promising in a context of circular economy, where a waste becomes a resource. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Indium sulfide buffer layers deposited by dry and wet methods

    International Nuclear Information System (INIS)

    Asenjo, B.; Sanz, C.; Guillen, C.; Chaparro, A.M.; Gutierrez, M.T.; Herrero, J.

    2007-01-01

    Indium sulfide (In 2 S 3 ) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In 2 S 3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass

  10. TIN-X

    DEFF Research Database (Denmark)

    Cannon, Daniel C; Yang, Jeremy J; Mathias, Stephen L

    2017-01-01

    between proteins and diseases, based on text mining data processed from scientific literature. In the current implementation, TIN-X supports exploration of data for G-protein coupled receptors, kinases, ion channels, and nuclear receptors. TIN-X supports browsing and navigating across proteins......Motivation: The increasing amount of peer-reviewed manuscripts requires the development of specific mining tools to facilitate the visual exploration of evidence linking diseases and proteins. Results: We developed TIN-X, the Target Importance and Novelty eXplorer, to visualize the association...

  11. Lability of nanoparticulate metal complexes in electrochemical speciation analysis

    DEFF Research Database (Denmark)

    van Leeuwen, Herman P.; Town, Raewyn M.

    2016-01-01

    Lability concepts are elaborated for metal complexes with soft (3D) and hard (2D) aqueous nanoparticles. In the presence of a non-equilibrium sensor, e.g. a voltammetric electrode, the notion of lability for nanoparticulate metal complexes, M-NP, reflects the ability of the M-NP to maintain...... equilibrium with the reduced concentration of the electroactive free M2+ in its diffusion layer. Since the metal ion binding sites are confined to the NP body, the conventional reaction layer in the form of a layer adjacent to the electrode surface is immaterial. Instead an intraparticulate reaction zone may...... of the electrochemical technique is crucial in the lability towards the electrode surface. In contrast, for nanoparticulate complexes it is the dynamics of the exchange of the electroactive metal ion with the surrounding medium that governs the effective lability towards the electrode surface....

  12. Toxicology of inorganic tin

    International Nuclear Information System (INIS)

    Burba, J.V.

    1982-01-01

    Tin(II) or stannous ion as a reducing agent is important in nuclear medicine because it is an essential component and common denominator for many in vivo radiodiagnostic agents, commonly called kits for the preparation of radiopharmaceuticals. This report is intended to alert nuclear medicine community regarding the wide range of biological effects that the stannous ion is capable of producing, and is a review of a large number of selected publications on the toxicological potential of tin(II)

  13. Outdoor Operational Stability of Indium-Free Flexible Polymer Solar Modules Over 1 Year Studied in India, Holland, and Denmark

    DEFF Research Database (Denmark)

    Angmo, Dechan; Sommeling, Paul M.; Gupta, Ritu

    2014-01-01

    We present an outdoor interlaboratory stability study of fully printed and coated indium-tin-oxide (ITO)-free polymer solar cell modules in JNCASR Bangalore (India), ECN (Holland), and DTU (Denmark) carried over more than 1 year. The modules comprising a fully printed and coated stack (Ag grid...

  14. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud; Hota, Mrinal Kanti; Wang, Zhenwei; Aljawhari, Hala; Alshareef, Husam N.

    2017-01-01

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93

  15. Determination of total tin in canned food using inductively coupled plasma atomic emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Perring, Loic; Basic-Dvorzak, Marija [Department of Quality and Safety Assurance, Nestle Research Centre, P.O. Box 44, Vers chez-les-Blanc, 1000, Lausanne (Switzerland)

    2002-09-01

    Tin is considered to be a priority contaminant by the Codex Alimentarius Commission. Tin can enter foods either from natural sources, environmental pollution, packaging material or pesticides. Higher concentrations are found in processed food and canned foods. Dissolution of the tinplate depends on the of food matrix, acidity, presence of oxidising reagents (anthocyanin, nitrate, iron and copper) presence of air (oxygen) in the headspace, time and storage temperature. To reduce corrosion and dissolution of tin, nowadays cans are usually lacquered, which gives a marked reduction of tin migration into the food product. Due to the lack of modern validated published methods for food products, an ICP-AES (Inductively coupled plasma-atomic emission spectroscopy) method has been developed and evaluated. This technique is available in many laboratories in the food industry and is more sensitive than atomic absorption. Conditions of sample preparation and spectroscopic parameters for tin measurement by axial ICP-AES were investigated for their ruggedness. Two methods of preparation involving high-pressure ashing or microwave digestion in volumetric flasks were evaluated. They gave complete recovery of tin with similar accuracy and precision. Recoveries of tin from spiked products with two levels of tin were in the range 99{+-}5%. Robust relative repeatabilities and intermediate reproducibilities were <5% for different food matrices containing >30 mg/kg of tin. Internal standard correction (indium or strontium) did not improve the method performance. Three emission lines for tin were tested (189.927, 283.998 and 235.485 nm) but only 189.927 nm was found to be robust enough with respect to interferences, especially at low tin concentrations. The LOQ (limit of quantification) was around 0.8 mg/kg at 189.927 nm. A survey of tin content in a range of canned foods is given. (orig.)

  16. Indium and thallium

    International Nuclear Information System (INIS)

    1976-01-01

    The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

  17. The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

    Science.gov (United States)

    White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

    2017-01-01

    Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

  18. Anelasticity of polycrystalline indium

    Energy Technology Data Exchange (ETDEWEB)

    Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

    2009-09-15

    Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

  19. Dispersion of nanoparticulate suspensions using self-assembled surfactant aggregates

    Science.gov (United States)

    Singh, Pankaj Kumar

    The dispersion of particles is critical for several industrial applications such as paints, inks, coatings, and cosmetics. Several emerging applications such as abrasives for precision polishing, and drug delivery systems are increasingly relying on nanoparticulates to achieve the desired performance. In the case of nanoparticles, the dispersion becomes more challenging because of the lack of fundamental understanding of dispersant adsorption and interparticle force prediction. Additionally, many of these processes use severe processing environments such as high normal forces (>100 mN/m), high shear forces (>10,000 s -1), and high ionic strengths (>0.1 M). Under such processing conditions, traditionally used dispersants based on electrostatics, and steric force repulsion mechanism may not be adequate. Hence, the development of optimally performing dispersants requires a fundamental understanding of the dispersion mechanism at the atomic/molecular scale. This study explores the use of self-assembled surfactant aggregates at the solid-liquid interface for dispersing nanoparticles in severe processing environments. Surfactant molecules can provide a feasible alternative to polymeric or inorganic dispersants for stabilizing ultrafine particles. The barrier to aggregation in the presence of surfactant molecules was measured using atomic force microscopy. The barrier heights correlated to suspension stability. To understand the mechanism for nanoparticulate suspension stability in the presence of surfactant films, the interface was characterized using zeta potential, contact angle, adsorption, and FT-IR (adsorbed surfactant film structure measurements). The effect of solution conditions such as pH and ionic strength on the suspension stability, and the self-assembled surfactant films was also investigated. It was determined that a transition from a random to an ordered orientation of the surfactant molecules at the interface was responsible for stability of

  20. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  1. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  2. Tin–indium/graphene with enhanced initial coulombic efficiency and rate performance for lithium ion batteries

    International Nuclear Information System (INIS)

    Yang, Hongxun; Li, Ling

    2014-01-01

    Graphical abstract: -- Highlights: • Tin–indium/graphene hybrid was firstly synthesized. • Indium in the hybrid reduces charge transfer resistance of electrode. • Graphene can accommodate the volume change of nanoparticles during cycling. • Tin–indium/graphene hybrid shows enhanced initial coulombic efficiency. • Tin–indium/graphene hybrid shows enhanced rate capability. -- Abstract: Tin is an attractive anode material replacing the current commercial graphite for the next generation lithium ion batteries because of its high theoretical storage capacity and energy density. However, poor capacity retention caused by large volume changes during cycling, and low rate capability frustrate its practical application. In this study, a new ternary composite based on tin–indium alloy (Sn–In) and graphene nanosheet (GNS) was prepared via a facile solvothermal synthesis followed by thermal treatment in hydrogen and argon at 550 °C. Characterizations show that the tin–indium nanoparticles with about 100 nm in size were wrapped between the graphene nanosheets. As an anode for lithium ion batteries, the Sn–In/GNS composite exhibits a remarkably improved electrochemical performance in terms of lithium storage capacity (865.6 mAh g −1 at 100 mA g −1 rate), initial coulombic efficiency (78.6%), cycling stability (83.9% capacity retention after 50 cycles), and rate capability (493.2 mAh g −1 at 600 mA g −1 rate after 25 cycles) compared to Sn/GNS and Sn–In electrode. This improvement is attributed to the introduction of lithium activity metal, indium, which reduces the charge transfer resistance of electrode, and the graphene nanosheet which accommodates the volume change of tin–indium nanoparticles during cycling and improves electrical conductivity of material

  3. Indium recovery by solvent extraction

    International Nuclear Information System (INIS)

    Fortes, Marilia Camargos Botelho

    1999-04-01

    Indium has been recovered as a byproduct from residues generated from the sulfuric acid leaching circuits in mineral plants for zinc recovery. Once its recovery comes from the slags of other metals recovery, it is necessary to separate it from the other elements which usually are present in high concentrations. Many works have been approaching this separation and indicate the solvent extraction process as the main technique used. In Brazilian case, indium recovery depends on the knowledge of this technique and its development. This paper describes the solvent extraction knowledge for the indium recovery from aqueous solutions generated in mineral plants. The results for determination of the best experimental conditions to obtain a high indium concentration solution and minimum iron poisoning by solvent extraction with di (2-ethylhexyl)-phosphoric acid (D2EHPA) solubilized in isoparafin and exxsol has been presented. (author)

  4. The distribution of absorptive power dissipation in irradiated nanoparticulate system

    International Nuclear Information System (INIS)

    Li, Jiayu; Yang, Jian; Gu, Xiaobing

    2016-01-01

    The knowledge of local radiant absorption is important to the nanostructure optimization, it is beneficial to the applications in energy harvesting, optical heating, photocatalysis, etc. In this paper, FDTD model is constructed for the distribution of absorptive power dissipation in irradiated nanoparticulate system. The theoretical model extended from Mie theory is used to examine the FDTD model, the parameters and conditions set for FDTD simulation are confirmed based on the comparison. Then, the influence of Ag nanoparticle on the absorptive properties of nearby TiO_2 nanoparticle is investigated by FDTD simulation at the wavelength of 0.25 μm. It is indicated that suitable distance between TiO_2 and Ag particles is beneficial to the spectral radiant absorption of TiO_2 particle. Considering the agglomeration of nanoparticles and the oxidation at the TiO_2–Ag interface, the Ag core coated with Al_2O_3 shell is suggested, and the simulated results indicated that the shell thickness and the Ag core size need to be optimized for enhancing the radiant absorption of TiO_2 particle. - Highlights: • The absorptive power distribution in nanoparticulate system is simulated by FDTD. • FDTD simulation is compared with theoretical model extended from Mie theory. • The parameters and conditions are confirmed based on the comparison. • The influence of Ag nanoparticle on nearby TiO_2 particle's absorption is analyzed.

  5. Indium solar neutrino experiment using superconducting grains

    International Nuclear Information System (INIS)

    Bellefon, A. de; Espigat, P.

    1984-08-01

    In this paper we would like to emphasize the revival of interest for Indium experiment in Europe. Properties of metastable superconducting indium grains are presented and our progress towards making an experiment feasible is reviewed

  6. Superconducting tin core fiber

    International Nuclear Information System (INIS)

    Homa, Daniel; Liang, Yongxuan; Hill, Cary; Kaur, Gurbinder; Pickrell, Gary

    2015-01-01

    In this study, we demonstrated superconductivity in a fiber with a tin core and fused silica cladding. The fibers were fabricated via a modified melt-draw technique and maintained core diameters ranging from 50-300 microns and overall diameters of 125-800 microns. Superconductivity of this fiber design was validated via the traditional four-probe test method in a bath of liquid helium at temperatures on the order of 3.8 K. The synthesis route and fiber design are perquisites to ongoing research dedicated all-fiber optoelectronics and the relationships between superconductivity and the material structures, as well as corresponding fabrication techniques. (orig.)

  7. Electronic and chemical properties of indium clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Khardi, S.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Indium clusters are produced by the inert gas condensation technique. The ionization potentials are found higher for small clusters than for the Indium atom. This is explained by the p character of the bonding as in aluminium. Doubly charge clusters are also observed and fragmentation processes discussed. Finally small Indium clusters 3< n<9 are found very reactive with hydrocarbon. (orig.)

  8. A review of the world market of indium (Economy of indium)

    International Nuclear Information System (INIS)

    Naumov, A.V.

    2005-01-01

    A review of the current state of the world and Russian markets of indium and indium-containing products was made based on the publications of the last years. Main fields of indium application are given, in particular, its using for neutron absorbing regulating rods in nuclear reactors. The second γ-radiation resulted from neutron absorption allows using indium as a neutron detector. Indium market stabilization is expected due to supply from China and South Korea [ru

  9. Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Cheol-Hee; Jeong, Mi-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of); Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Lee, Jong-Hyeon [Graduate School of Green Energy Technology and Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Dajeon 305-764 (Korea, Republic of); Hong, Hyun-Seon [Advanced Materials and Processing Center, Institute for Advanced Engineering (IAE), Yongin 449-863 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of)

    2013-03-15

    Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

  10. Layered tin dioxide microrods

    International Nuclear Information System (INIS)

    Duan Junhong; Huang Hongbo; Gong Jiangfeng; Zhao Xiaoning; Cheng Guangxu; Yang Shaoguang

    2007-01-01

    Single-crystalline layered SnO 2 microrods were synthesized by a simple tin-water reaction at 900 deg. C. The structural and optical properties of the sample were characterized by x-ray powder diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, Raman scattering and photoluminescence (PL) spectroscopy. High resolution transmission electron microscopy studies and selected area electron diffraction patterns revealed that the layered SnO 2 microrods are single crystalline and their growth direction is along [1 1 0]. The growth mechanism of the microrods was proposed based on SEM, TEM characterization and thermodynamic analysis. It is deduced that the layered microrods grow by the stacking of SnO 2 sheets with a (1 1 0) surface in a vapour-liquid-solid process. Three emission peaks at 523, 569 and 626 nm were detected in room-temperature PL measurements

  11. Hydrolysis of bis(dimethylamido)tin to tin (II) oxyhydroxide and its selective transformation into tin (II) or tin (IV) oxide

    KAUST Repository

    Khanderi, Jayaprakash; Shi, Lei; Rothenberger, Alexander

    2015-01-01

    Sn6O4(OH)4, a hydrolysis product of Sn(NMe2)2, is transformed to tin (II) or tin (IV) oxide by solid and solution phase processing. Tin (II) oxide is formed by heating Sn6O4(OH)4 at ≤200 °C in air or under inert atmosphere. Tin (IV) oxide

  12. Nanoparticulate fillers improve the mechanical strength of bone cement.

    Science.gov (United States)

    Gomoll, Andreas H; Fitz, Wolfgang; Scott, Richard D; Thornhill, Thomas S; Bellare, Anuj

    2008-06-01

    Polymethylmethacrylate (PMMA-) based bone cement contains micrometer-size barium sulfate or zirconium oxide particles to radiopacify the cement for radiographic monitoring during follow-up. Considerable effort has been expended to improve the mechanical qualities of cements, largely through substitution of PMMA with new chemical structures. The introduction of these materials into clinical practice has been complicated by concerns over the unknown long-term risk profile of these new structures in vivo. We investigated a new composite with the well characterized chemical composition of current cements, but with nanoparticles instead of the conventional, micrometer-size barium sulfate radiopacifier. In this study, we replaced the barium sulfate microparticles that are usually present in commercial PMMA cements with barium sulfate nanoparticles. The resultant "microcomposite" and "nanocomposite" cements were then characterized through morphological investigations such as ultra-small angle X-ray scattering (USAXS) and scanning electron microscopy (SEM). Mechanical characterization included compression, tensile, compact tension, and fatigue testing. SEM and USAXS showed excellent dispersion of nanoparticles. Substitution of nanoparticles for microparticles resulted in a 41% increase in tensile strain-to-failure (p = 0.002) and a 70% increase in tensile work-of-fracture (p = 0.005). The nanocomposite cement also showed a two-fold increase in fatigue life compared to the conventional, microcomposite cement. In summary, nanoparticulate substitution of radiopacifiers substantially improved the in vitro mechanical properties of PMMA bone cement without changing the known chemical composition.

  13. Electrocatalytic glucose oxidation at gold and gold-carbon nanoparticulate film prepared from oppositely charged nanoparticles

    International Nuclear Information System (INIS)

    Karczmarczyk, Aleksandra; Celebanska, Anna; Nogala, Wojciech; Sashuk, Volodymyr; Chernyaeva, Olga; Opallo, Marcin

    2014-01-01

    Graphical abstract: - Highlights: • Gold nanoparticulate film electrodes were prepared by layer-by-layer method from oppositely charged nanoparticles. • Positively charged nanoparticles play dominant role in glucose oxidation in alkaline solution. • Gold and gold-carbon nanoparticulate film electrodes exhibit similar glucose oxidation current and onset potential. - Abstract: Electrocatalytic oxidation of glucose was studied at nanoparticulate gold and gold-carbon film electrodes. These electrodes were prepared by a layer-by-layer method without application of any linker molecules. Gold nanoparticles were stabilized by undecane thiols functionalized by trimethyl ammonium or carboxylate groups, whereas the carbon nanoparticles were covered by phenylsulfonate functionalities. The gold nanoparticulate electrodes were characterized by UV-vis and XPS spectroscopy, atomic force microscopy and voltammetry, before and after heat-treatment. Heat-treatment facilitates the aggregation of the nanoparticles and affects the structure of the film. The comparison of the results obtained with film electrodes prepared from gold nanoparticles with the same charge and with gold-carbon nanoparticulate electrodes, proved that positively charged nanoparticles are responsible for the high electrocatalytic activity, whereas negatively charged ones act rather as a linker of the film

  14. Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

    Science.gov (United States)

    Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

    2018-02-01

    Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

  15. Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

    International Nuclear Information System (INIS)

    Koo, Su-Jin; Ju, Chang-Sik

    2013-01-01

    Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

  16. Aluminium, gallium, indium and thallium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

  17. Indium flotation from hydrometallurgical solutions

    International Nuclear Information System (INIS)

    Sviridov, V.V.; Mal'tsev, G.I.; Petryakova, N.K.; Gomzikov, A.I.

    1980-01-01

    The principal possibility of flotation of indium small quantities (10 -4 gxion/l) is established from sulphuric-acid solutions of leaching converter dusts of the copper melting production in the form of complex compounds with sodium hexametaphosphate and cation-active nitrogen-containing surfactants. It is shown that the flotation process effectiveness is determined by the molar ratio of hexametaphosphate and collector introduced into the solution, solution oxidity and surfactant nature

  18. Light forces on an indium atomic beam

    International Nuclear Information System (INIS)

    Kloeter, B.

    2007-01-01

    In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied

  19. Degradation Studies of Polyolefins Incorporating Transparent Nanoparticulate Zinc Oxide UV Stabilizers

    International Nuclear Information System (INIS)

    Ammala, A.; Hill, A.J.; Meakin, P.; Pas, S.J.; Turney, T.W.

    2002-01-01

    Coated and dispersed nanoparticulate zinc oxide is shown to improve ultra violet (UV) stability of polypropylene and high-density polyethylene without changing its characteristic absorption spectrum in the visible region (400-800-nm). The performance of these nanoparticulate UV stabilizers is compared to conventional hindered amine light stabilizers (HALS). QUV accelerated weathering is used to simulate long-term exposure. Positron annihilation lifetime spectroscopy (PALS) is used to provide an indication of physical and chemical changes due to accelerated weathering and is shown to have potential for detecting changes well before other techniques. Visual observation, optical microscopy, carbonyl index, yellowness index and PALS indicate that nanoparticulate zinc oxide gives superior resistance to UV degradation compared to organic HALS at appropriate loading levels

  20. Extraction of indium from extremely diluted solutions; Gewinnung von Indium aus extrem verduennten Loesungen

    Energy Technology Data Exchange (ETDEWEB)

    Vostal, Radek; Singliar, Ute; Froehlich, Peter [TU Bergakademie Freiberg (Germany). Inst. fuer Technische Chemie

    2017-02-15

    The demand for indium is rising with the growth of the electronics industry, where it is mainly used. Therefore, a multistage extraction process was developed to separate indium from a model solution whose composition was adequate to sphalerite ore. The initially very low concentration of indium in the solution was significantly increased by several successive extraction and reextraction steps. The process described is characterized by a low requirement for chemicals and a high purity of the obtained indium oxide.

  1. Indium oxide deposition on glass by aerosol pyrolysis (Pyrosol (R) process)

    International Nuclear Information System (INIS)

    Blandenet, G.; Lagarde, Y.; Spitz, J.

    1975-01-01

    The pyrosol (R) process involves the pyrolysis of an aerosol generated by ultrasonic nebulisation from a solution of organic or inorganic compounds. This technique was used to deposit transparent n-conducting indium oxide films on glass. The electrical and optical properties of these films were studied as a function of the deposition temperature and doping (using tin or fluorine). A deposition temperature of 480 deg C and a Sn/In ratio of about 5% gave the best results. In this case, the transmission in the visible range was 92%, the infrared reflection 84% and the electrical resistivity 1.7x10 -4 ohm.cm [fr

  2. Nanomechanical Characterization of Indium Nano/Microwires

    Directory of Open Access Journals (Sweden)

    N Kiran MSR

    2010-01-01

    Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

  3. Evaluated neutronic file for indium

    International Nuclear Information System (INIS)

    Smith, A.B.; Chiba, S.; Smith, D.L.; Meadows, J.W.; Guenther, P.T.; Lawson, R.D.; Howerton, R.J.

    1990-01-01

    A comprehensive evaluated neutronic data file for elemental indium is documented. This file, extending from 10 -5 eV to 20 MeV, is presented in the ENDF/B-VI format, and contains all neutron-induced processes necessary for the vast majority of neutronic applications. In addition, an evaluation of the 115 In(n,n') 116m In dosimetry reaction is presented as a separate file. Attention is given in quantitative values, with corresponding uncertainty information. These files have been submitted for consideration as a part of the ENDF/B-VI national evaluated-file system. 144 refs., 10 figs., 4 tabs

  4. Chemical components, pharmacological properties, and nanoparticulate delivery systems of Brucea javanica

    Directory of Open Access Journals (Sweden)

    Peng X

    2013-01-01

    Full Text Available Meiwan Chen,1,‡ Ruie Chen,1,‡ Shengpeng Wang,1 Wen Tan,1 Yangyang Hu,1 Xinsheng Peng,2 Yitao Wang11State Key Laboratory of Quality Research in Chinese Medicine, Institute of Chinese Medical Sciences, University of Macau, Macau, China; 2School of Pharmaceutical Sciences, Guangdong Medical College, Dongguan, China‡These authors contributed equally to this workAbstract: Brucea javanica has demonstrated a variety of antitumoral, antimalarial, and anti-inflammatory properties. As a Chinese herbal medicine, Brucea javanica is mainly used in the treatment of lung and gastrointestinal cancers. Pharmacological research has identified the main antitumor components are tetracyclic triterpene quassinoids. However, most of these active components have poor water solubility and low bioavailability, which greatly limit their clinical application. Nanoparticulate delivery systems are urgently needed to improve the bioavailability of Brucea javanica. This paper mainly focuses on the chemical components in Brucea javanica and its pharmacological properties and nanoparticulate formulations, in an attempt to encourage further research on its active components and nanoparticulate drug delivery systems to expand its clinical applications. It is expected to improve the level of pharmaceutical research and provide a strong scientific foundation for further study on the medicinal properties of this plant.Keywords: Brucea javanica, chemical components, pharmacology, nanoparticulate delivery systems

  5. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  6. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  7. On the mechanism of nanoparticulate CeO{sub 2} toxicity to freshwater algae

    Energy Technology Data Exchange (ETDEWEB)

    Angel, Brad M., E-mail: Brad.Angel@csiro.au [Centre for Environmental Contaminants Research, CSIRO Land and Water Flagship, Locked Bag 2007, Kirrawee, NSW 2232 (Australia); Vallotton, Pascal [Digital Productivity Flagship, CSIRO, North Ryde, NSW 1670 (Australia); Apte, Simon C. [Centre for Environmental Contaminants Research, CSIRO Land and Water Flagship, Locked Bag 2007, Kirrawee, NSW 2232 (Australia)

    2015-11-15

    Highlights: • Nanoparticulate CeO{sub 2} less toxic than micron-sized CeO{sub 2}. • UV light filters prevented ROS generation by CeO{sub 2}. • ROS not toxic mechanism: CeO{sub 2} toxicity was similar in presence and absence of ROS. • Strong sorption of nanoparticulate CeO{sub 2} to Pseudokirchneriella subcapitata in synthetic fresh water. • CeO{sub 2} sorption to cells was prevented and toxicity mitigated in the presence of DOC. - Abstract: The factors affecting the chronic (72-h) toxicity of three nanoparticulate (10–34 nm) and one micron-sized form of CeO{sub 2} to the green alga, Pseudokirchneriella subcapitata were investigated. To characterise transformations in solution, hydrodynamic diameters (HDD) were measured by dynamic light scatter, zeta potential values by electrophoretic mobility, and dissolution by equilibrium dialysis. The protective effects of humic and fulvic dissolved organic carbon (DOC) on toxicity were also assessed. To investigate the mechanisms of algal toxicity, the CytoViva hyperspectral imaging system was used to visualise algal–CeO{sub 2} interactions in the presence and absence of DOC, and the role of reactive oxygen species (ROS) was investigated by ‘switching off’ ROS production using UV-filtered lighting conditions. The nanoparticulate CeO{sub 2} immediately aggregated in solution to HDDs measured in the range 113–193 nm, whereas the HDD and zeta potential values were significantly lower in the presence of DOC. Negligible CeO{sub 2} dissolution over the time course of the bioassay ruled out potential toxicity from dissolved cerium. The nanoparticulate CeO{sub 2} concentration that caused 50% inhibition of algal growth rate (IC50) was in the range 7.6–28 mg/L compared with 59 mg/L for micron-sized ceria, indicating that smaller particles were more toxic. The presence of DOC mitigated toxicity, with IC50s increasing to greater than 100 mg/L. Significant ROS were generated in the nanoparticulate CeO{sub 2

  8. Measuring the sustainability of tin in China.

    Science.gov (United States)

    Yang, Congren; Tan, Quanyin; Zeng, Xianlai; Zhang, Yuping; Wang, Zhishi; Li, Jinhui

    2018-09-01

    Tin is a component of many items used in daily activities, including solder in consumer electronics, tin can containing food and beverages, polyvinyl chloride stabilizers in construction products, catalysts in industrial processes, etc. China is the largest producer and consumer of refined tin, and more than 60% of this refined tin is applied in the electronics sector as solder. China is the leader in global economic growth; simultaneously, China is also a major producer and consumer of electrical and electronic equipment (EEE). Thus, future tin supply and demand in China are forecasted, based on the gross domestic product per capita and the average consumption of refined tin in past five years. Current tin reserves and identified resources in China can meet the future two decades of mine production, but import of tin will also be critical for China's future tin consumption. However, there will be a lot of uncertainty for import of tin from other countries. At the same time, virgin mining of geological ores is a process of high energy consumption and destruction of the natural environment. Hence recycling tin from Sn-bearing secondary resources like tailings and waste electrical and electronic equipment (WEEE) can not only address the shortage of tin mineral resources, but also save energy and protect the ecological environment. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. International strategic minerals inventory summary report; tin

    Science.gov (United States)

    Sutphin, D.M.; Sabin, A.E.; Reed, B.L.

    1990-01-01

    The International Strategic Minerals Inventory tin inventory contains records for 56 major tin deposits and districts in 21 countries. These countries accounted for 98 percent of the 10 million metric tons of tin produced in the period 1934-87. Tin is a good alloying metal and is generally nontoxic, and its chief uses are as tinplate for tin cans and as solder in electronics. The 56 locations consist of 39 lode deposits and 17 placers and contain almost 7.5 million metric tons of tin in identified economic resources (R1E) and another 1.5 million metric tons of tin in other resource categories. Most of these resources are in major deposits that have been known for over a hundred years. Lode deposits account for 44 percent of the R1E and 87 percent of the resources in other categories. Placer deposits make up the remainder. Low-income and middle-income countries, including Bolivia and Brazil and countries along the Southeast Asian Tin Belt such as Malaysia, Thailand, and Indonesia account for 91 percent of the R1E resources of tin and for 61 percent of resources in other categories. The United States has less than 0.05 percent of the world's tin R1E in major deposits. Available data suggest that the Soviet Union may have about 4 percent of resources in this category. The industrial market economy countries of the United States, Japan, Federal Republic of Germany, and the United Kingdom are major consumers of tin, whereas the major tin-producing countries generally consume little tin. The Soviet Union and China are both major producers and consumers of tin. At the end of World War II, the four largest tin-producing countries (Bolivia, the Belgian Congo (Zaire), Nigeria, and Malaysia) produced over 80 percent of the world's tin. In 1986, the portion of production from the four largest producers (Malaysia, Brazil, Soviet Union, Indonesia) declined to about 55 percent, while the price of tin rose from about $1,500 to $18,000 per metric ton. In response to tin shortages

  10. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

    Science.gov (United States)

    2011-03-01

    spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

  11. Anomalous electrical properties of Pbsub(1-x)Snsub(x)Te layers with indium impurity

    International Nuclear Information System (INIS)

    Gejman, K.I.; Drabkin, I.A.; Matveenko, A.V.; Mozhaev, E.A.; Parfen'ev, R.V.

    1977-01-01

    Galvanomagnetic properties of indium doped (5x10 -3 -2x10 -1 at.% In) Pbsub(1-x)Snsub(x)Te monocrystal layers of n-type (x=0.1 - 0.22) sprayed on the (3) spalls of BaF 2 have been investigated. The layers with In display high homogeneity and lower electron density at 77 K, than the layers without In. With decreasing temperature below 20 K in the indium doped Pbsub(1-x)Snsub(x)Te layers an anomalous sharp increase of the electron density calculated from the Hall coefficient and reduction in electron mobility have been observed. The phenomenon under observation is related to the behaviour of indium under conditions of a possible structural phase transition initiated by introducing tin into PbTe. Investigation of the Shubnikov-de Gaas (SG) oscillations confirms the anomalous temperature dependence of the electron density. Distinctive features have been revealed in the SG oscillations of magnetoresistance in the Pbsub(1-x)Snsub(x)Te layers with In and without it, caused by deformations occurring in the films due to different coefficients of linear expansion of the material and a substrate. The splitting energy in the conduction band of the Pbsub(1-x)Snsub(x)Te layers has been determined, and the shift constant of the deformation potential has been estimated

  12. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  13. Chemistry of tin compounds and environment

    International Nuclear Information System (INIS)

    Ali, S.; Mazhar, M.; Mahmood, S.; Bhatti, M.H.; Chaudhary, M.A.

    1997-01-01

    Of the large volume of tin compounds reported in the literature, possible only 100 are commercially important. Tin compounds are a wide variety of purposes such as catalysts, stabilizers for many materials including polymer, biocidal agents, bactericides, insecticides, fungicides, wood preservatives, acaricides and anti fouling agents in paints, anticancer and antitumour agents, ceramic opacifiers, as textile additives, in metal finishing operations, as food additives and in electro conductive coating. All these applications make the environment much exposed to tin contamination. The application of organotin compounds as biocides account for about 30% of total tin consumption suggesting that the main environmental effects are likely to originate from this sector. Diorgano tins and mono-organo tins are used mainly in plastic industry which is the next big source for environmental pollution. In this presentation all environmental aspects of the use of tin compounds and the recommended preventive measures are discussed. (author)

  14. Arsenic sorption to nanoparticulate mackinawite (FeS): An examination of phosphate competition.

    Science.gov (United States)

    Niazi, Nabeel Khan; Burton, Edward D

    2016-11-01

    Nanoparticulate mackinawite (FeS) can be an important host-phase for arsenic (As) in sulfidic, subsurface environments. Although not previously investigated, phosphate (PO 4 3- ) may compete with As for available sorption sites on FeS, thereby enhancing As mobility in FeS-bearing soils, sediments and groundwater systems. In this study, we examine the effect of PO 4 3- on sorption of arsenate (As(V)) and arsenite (As(III)) to nanoparticulate FeS at pH 6, 7 and 9. Results show that PO 4 3- (at 0.01-1.0 mM P) did not significantly affect sorption of either As(V) or As(III) to nanoparticulate FeS at initial aqueous As concentrations ranging from 0.01 to 1.0 mM. At pH 9 and 7, sorption of both As(III) and As(V) to nanoparticulate FeS was similar, with distribution coefficient (K d ) values spanning 0.76-15 L g -1 (which corresponds to removal of 87-98% of initial aqueous As(III) and As(V) concentrations). Conversely, at pH 6, the sorption of As(III) was characterized by substantially higher K d values (6.3-93.4 L g -1 ) than those for As(V) (K d  = 0.21-0.96 L g -1 ). Arsenic K-edge X-ray absorption near edge structure (XANES) spectroscopy indicated that up to 52% of the added As(V) was reduced to As(III) in As(V) sorption experiments, as well as the formation of minor amounts of an As 2 S 3 -like species. In As(III) sorption experiments, XANES spectroscopy also demonstrated the formation of an As 2 S 3 -like species and the partial oxidation of As(III) to As(V) (despite the strictly O 2 -free experimental conditions). Overall, the XANES data indicate that As sorption to nanoparticulate FeS involves several redox transformations and various sorbed species, which display a complex dependency on pH and As loading but that are not influenced by the co-occurrence of PO 4 3- . This study shows that nanoparticulate FeS can help to immobilize As(III) and As(V) in sulfidic subsurface environments where As co-exists with PO 4 3- . Copyright © 2016 Elsevier Ltd. All

  15. Indium-bridged [1]ferrocenophanes.

    Science.gov (United States)

    Bagh, Bidraha; Sadeh, Saeid; Green, Jennifer C; Müller, Jens

    2014-02-17

    Indium-bridged [1]ferrocenophanes ([1]FCPs) and [1.1]ferrocenophanes ([1.1]FCPs) were synthesized from dilithioferrocene species and indium dichlorides. The reaction of Li2fc⋅tmeda (fc = (H4C5)2Fe) and (Mamx)InCl2 (Mamx = 6-(Me2NCH2)-2,4-tBu2C6H2) gave a mixture of the [1]FCP (Mamx)Infc (4(1)), the [1.1]FCP [(Mamx)Infc]2 (4(2)), and oligomers [(Mamx)Infc]n (4(n)). In a similar reaction, employing the enantiomerically pure, planar-chiral (Sp,Sp)-1,1'-dibromo-2,2'-diisopropylferrocene (1) as a precursor for the dilithioferrocene derivative Li2fc(iPr2), equipped with two iPr groups in the α position, gave the inda[1]ferrocenophane 5(1) [(Mamx)Infc(iPr2)] selectively. Species 5(1) underwent ring-opening polymerization to give the polymer 5(n). The reaction between Li2fc(iPr2) and Ar'InCl2 (Ar' = 2-(Me2NCH2)C6H4) gave an inseparable mixture of the [1]FCP Ar'Infc(iPr2) (6(1)) and the [1.1]FCP [Ar'Infc(iPr2)]2 (6(2)). Hydrogenolysis reactions (BP86/TZ2P) of the four inda[1]ferrocenophanes revealed that the structurally most distorted species (5(1)) is also the most strained [1]FCP. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Novel Effects of Nanoparticulate Delivery of Zinc on Growth, Productivity, and Zinc Biofortification in Maize (Zea mays L.).

    Science.gov (United States)

    Subbaiah, Layam Venkata; Prasad, Tollamadugu Naga Venkata Krishna Vara; Krishna, Thimmavajjula Giridhara; Sudhakar, Palagiri; Reddy, Balam Ravindra; Pradeep, Thalappil

    2016-05-18

    In the present investigation, nanoscale zinc oxide particulates (ZnO-nanoparticulates) were prepared using a modified oxalate decomposition method. Prepared ZnO-nanoparticulates (mean size = 25 nm) were characterized using techniques such as transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), and zeta potential analyzer. Different concentrations (50, 100, 200, 400, 600, 800, 1000, 1500, and 2000 ppm) of ZnO-nanoparticulates were examined to reveal their effects on maize crop on overall growth and translocation of zinc along with bulk ZnSO4 and control. Highest germination percentage (80%) and seedling vigor index (1923.20) were observed at 1500 ppm of ZnO-nanoparticulates. The yield was 42% more compared to control and 15% higher compared to 2000 ppm of ZnSO4. Higher accumulation of zinc (35.96 ppm) in grains was recorded with application of 100 ppm followed by 400 ppm (31.05 ppm) of ZnO-nanoparticulates. These results indicate that ZnO-nanoparticulates have significant effects on growth, yield, and zinc content of maize grains, which is an important feature in terms of human health.

  17. The Moessbauer effect in binary tin chalcogenides of tin 119

    International Nuclear Information System (INIS)

    Ortalli, I.; Fano, V.

    1975-01-01

    The values of the isomer shift, quadrupole splitting, Moessbauer coefficient, Debye temperature for the tin chalcogenides SnS. SnSe, SnTe are tabulated for the temperatures 80 and 300 K. Temperature dependences of the Moessbauer coefficient and of the effective Debye temperature for SnS, SnSe and SnTe in a temperature range of 78 to 300 K are presented. (Z.S.)

  18. Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

    Directory of Open Access Journals (Sweden)

    Umut Cindemir

    2016-04-01

    Full Text Available Reactive dual-target DC magnetron sputtering was used to prepare In–Sn oxide thin films with a wide range of compositions. The films were subjected to annealing post-treatment at 400 °C or 500 °C for different periods of time. Compositional and structural characterizations were performed by X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, Rutherford backscattering and scanning electron microscopy. Films were investigated for gas sensing at 200 °C by measuring their resistance response upon exposure to acetaldehyde mixed with synthetic air. We found that the relative indium-to-tin content was very important and that measurable sensor responses could be recorded at acetaldehyde concentrations down to 200 ppb, with small resistance drift between repeated exposures, for both crystalline SnO2-like films and for amorphous films consisting of about equal amounts of In and Sn. We also demonstrated that it is not possible to prepare crystalline sensors with intermediate indium-to-tin compositions by sputter deposition and post-annealing up to 500 °C.

  19. Polarographic determination of selenium in indium

    International Nuclear Information System (INIS)

    Kaplan, B.Ya.; Mikheeva, V.A.; Priz, N.B.

    1978-01-01

    The procedure of determining nx10 -6 % Se in indium after concentrating in an elemental form on arsenic and sulphur has been developed. The selenium content is determined by inversion a.c. polarography on a sulphuric-acid background in the presence of Cu(2), potassium bichromate, and sodium pyrophosphate. 5.7x10 -6 % Se in metal indium has been determined by this procedure, the mean standard deviation being Sr=0.26

  20. Quantification of indium in steel using PIXE

    International Nuclear Information System (INIS)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-01-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.)

  1. Quantification of indium in steel using PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-04-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

  2. Studies on Cementation of Tin on Copper and Tin Stripping from Copper Substrate

    Directory of Open Access Journals (Sweden)

    Rudnik E.

    2016-06-01

    Full Text Available Cementation of tin on copper in acid chloride-thiourea solutions leads to the formation of porous layers with a thickness dependent on the immersion time. The process occurs via Sn(II-Cu(I mechanism. Chemical stripping of tin was carried out in alkaline and acid solutions in the presence of oxidizing agents. It resulted in the dissolution of metallic tin, but refractory Cu3Sn phase remained on the copper surface. Electrochemical tin stripping allows complete tin removal from the copper substrate, but porosity and complex phase composition of the tin coating do not allow monitoring the process in unambiguous way.

  3. Tinned fish with radioprotective ingredients

    International Nuclear Information System (INIS)

    Chaneva, M.; Minkova, M.; Zajko, G.

    1992-01-01

    A survey of food ingredients with pronounced radioprotective properties is made. The protective effect of fish proteins and some vegetable oils is mentioned. As suitable additives to tinned fish during the manufacturing process the β carotene, anthocyans and apple pectin are pointed out. β-carotene possesses the ability to absorb radiations. It can be added either as a pure crystalline substance or dissolved in the vegetable oil. Anthocyans have an antimutagen effect due to their ability to inhibit free radical reactions. Some vegetable polyphenols can be added with wine. The Bulgarian anthocyan concentrate Enobagrin (made by extraction of marc and wine) is also proposed. A combination of Enobagrin, β-tocopherol and pyracetam decreases the postradiation hypoplasia. Special attention is paid to the importance of the pectin in intoxication with heavy radioactive metals. It is thought that the pectin forms unsoluble complex compounds with Fe, Zn, Cd, Co, Pb, Hg, Mn, Cr. The binding energy depends on the available carboxylic groups. Some experiments showing the interaction of the pectin with 90 Sr are mentioned. In the tinned fish the pectin can be introduced with tomato paste. Vegetables rich in pectin and carotene - carrots and tomato concentrate - can be added as well. Proposed enriched tinned fish can be used as a preventive radioprotective food under conditions of increased radiation risk. 19 refs

  4. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  5. Photocatalytic degradation of paraoxon-ethyl in aqueous solution using titania nanoparticulate film

    International Nuclear Information System (INIS)

    Prasad, G.K.; Ramacharyulu, P.V.R.K.; Kumar, J. Praveen; Srivastava, A.R.; Singh, Beer

    2012-01-01

    Photocatalytic degradation of paraoxon-ethyl (o,o-diethyl o-(4-nitrophenyl) phosphate), a well known surrogate of chemical warfare agents, in aqueous solution was studied by using titania nanoparticulate film. Reaction followed pseudo first order behaviour. Photolytic degradation reaction of paraoxon-ethyl demonstrated relatively low rate with a value of rate constant of 2.5 × 10 −3 min −1 . Whereas, degradation reaction in the presence of titania nanoparticulate film and UV light displayed enhanced rate with a value of rate constant of 6.9 × 10 −3 min −1 due to photocatalysis. Gas chromatography–mass spectrometry analysis showed the formation of p-nitrophenol, o,o-diethyl phosphonic acid, o-ethyl, diphosphonic acid, phosphoric acid, dimerized product of o,o-diethyl phosphonic acid, acetaldehyde, and carbon dioxide due to photocatalytic degradation of paraoxon-ethyl. It indicates that, photocatalytic degradation reaction begins with destruction of P–O–C bonds. Subsequently, P, C atoms were found to be oxidized gradually, and contributed to its photocatalytic degradation. - Highlights: ► Synthesis of titania nanoparticles by sol–gel method. ► Fabrication of titania nanoparticulate film by dip coating. ► Paraoxon ethyl degradation reactions followed pseudo first order behaviour. ► Paraoxon-ethyl degraded to non toxic compounds like CO 2 , acetaldehyde, and nitrophenol.

  6. On the compressibility of TiC in microcrystalline and nanoparticulate form

    International Nuclear Information System (INIS)

    Gu, Q F; Krauss, G; Steurer, W; Gramm, F

    2008-01-01

    The compressibility of TiC in microcrystalline and nanoparticulate (30-50 nm) form was studied by in situ high-pressure synchrotron radiation x-ray diffraction measurements up to 53.7 GPa using a diamond anvil cell. Both materials are structurally stable within the framework of the experiments applying quasihydrostatic pressure conditions. Under nonhydrostatic pressure conditions, the lattice of microcrystalline TiC is rhombohedrally distorted. Comparable values for the bulk modulus were found for both materials, i.e. K 0 = 254(7) GPa, K' = 4.8(4) for microcrystalline TiC and K 0 = 276(14) GPa, K' = 3.5(8) for nanoparticulate TiC, respectively. High-resolution transmission electron microscopy investigations revealed a nearly single-domain microstructure of the nanoparticles. The microstructure and size of the nanoparticles, making a size-induced effect on the mechanical properties negligible, explain well the observed similarity of the mechanical properties of microcrystalline and nanoparticulate TiC.

  7. Photocatalytic degradation of paraoxon-ethyl in aqueous solution using titania nanoparticulate film

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, G.K., E-mail: gkprasad2001@yahoo.com; Ramacharyulu, P.V.R.K.; Kumar, J. Praveen; Srivastava, A.R.; Singh, Beer

    2012-06-30

    Photocatalytic degradation of paraoxon-ethyl (o,o-diethyl o-(4-nitrophenyl) phosphate), a well known surrogate of chemical warfare agents, in aqueous solution was studied by using titania nanoparticulate film. Reaction followed pseudo first order behaviour. Photolytic degradation reaction of paraoxon-ethyl demonstrated relatively low rate with a value of rate constant of 2.5 Multiplication-Sign 10{sup -3} min{sup -1}. Whereas, degradation reaction in the presence of titania nanoparticulate film and UV light displayed enhanced rate with a value of rate constant of 6.9 Multiplication-Sign 10{sup -3} min{sup -1} due to photocatalysis. Gas chromatography-mass spectrometry analysis showed the formation of p-nitrophenol, o,o-diethyl phosphonic acid, o-ethyl, diphosphonic acid, phosphoric acid, dimerized product of o,o-diethyl phosphonic acid, acetaldehyde, and carbon dioxide due to photocatalytic degradation of paraoxon-ethyl. It indicates that, photocatalytic degradation reaction begins with destruction of P-O-C bonds. Subsequently, P, C atoms were found to be oxidized gradually, and contributed to its photocatalytic degradation. - Highlights: Black-Right-Pointing-Pointer Synthesis of titania nanoparticles by sol-gel method. Black-Right-Pointing-Pointer Fabrication of titania nanoparticulate film by dip coating. Black-Right-Pointing-Pointer Paraoxon ethyl degradation reactions followed pseudo first order behaviour. Black-Right-Pointing-Pointer Paraoxon-ethyl degraded to non toxic compounds like CO{sub 2}, acetaldehyde, and nitrophenol.

  8. Study of an ultrasound-based process analytical tool for homogenization of nanoparticulate pharmaceutical vehicles.

    Science.gov (United States)

    Cavegn, Martin; Douglas, Ryan; Akkermans, Guy; Kuentz, Martin

    2011-08-01

    There are currently no adequate process analyzers for nanoparticulate viscosity enhancers. This article aims to evaluate ultrasonic resonator technology as a monitoring tool for homogenization of nanoparticulate gels. Aqueous dispersions of colloidal microcrystalline cellulose (MCC) and a mixture of clay particles with xanthan gum were compared with colloidal silicon dioxide in oil. The processing was conducted using a laboratory-scale homogenizing vessel. The study investigated first the homogenization kinetics of the different systems to focus then on process factors in the case of colloidal MCC. Moreover, rheological properties were analyzed offline to assess the structure of the resulting gels. Results showed the suitability of ultrasound velocimetry to monitor the homogenization process. The obtained data were fitted using a novel heuristic model. It was possible to identify characteristic homogenization times for each formulation. The subsequent study of the process factors demonstrated that ultrasonic process analysis was equally sensitive as offline rheological measurements in detecting subtle manufacturing changes. It can be concluded that the ultrasonic method was able to successfully assess homogenization of nanoparticulate viscosity enhancers. This novel technique can become a vital tool for development and production of pharmaceutical suspensions in the future. Copyright © 2011 Wiley-Liss, Inc.

  9. Surface roughness of microparticulated and nanoparticulated composites after finishing and polishing procedures

    Directory of Open Access Journals (Sweden)

    Rosemary Arai Sadami Shinkai

    Full Text Available Objective: To evaluated the surface roughness of one microparticulate resin composite Durafill (Heraeus Kulzer Weihrheim, Germany andfour nanoparticulate resins 4 Seasons (Ivoclar Vivadent, Schaan, Liechtenstein Esthet x (Dentsply, Milford, DE, USA, Point 4 and Supreme (3M-ESPE, Dental Products,St. Paul, MN, USA. Methods: After finishing with a diamond bur point (F, and polishing with silicone points of gray, green and pink color Politipit (Ivoclar Vivadent,Schaan, Liechtenstein, four stages of completion were performed, simulating one of finishing and three of polishing a resin restoration. Ten samples of each composite resin were measured for surface roughness with surface profilometer (Mitutoyo Corporation, Tokyo, Japan after each of finishing and polishing sequence.Results: The results showed that nanoparticulate and microparticulate resins presented a significant difference in the surface roughness values, in all finishing and polishing steps. Conclusion: Of the the nanoparticulate resins 4 Seasons (Ivoclar Vivadent, Schaan, Liechtenstein, Point 4 (Kerr CO, Orange, CA, USA, and also microparticulate Durafill (Heraeus Kulzer Weihrheim, Germany presented significantly lower surface roughness values after completing all the finishing and polishing stages.

  10. Solvent extraction of indium, tin, arsenic, and antimony by non-phosphorous compounds

    International Nuclear Information System (INIS)

    Auchapt, J.M.; Tostain, Jacqueline.

    1975-12-01

    The extraction methods of In, Ti, Sn, As and Sb using non-phosphorous compounds are reviewed. This report is the continuation of the BIB-212 (pt.1) report concerned by Zn, Cd, Pb and Ag. So, the main elements of Zn ores are studied in these two reports [fr

  11. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  12. Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. M. Khusayfan

    2013-01-01

    Full Text Available ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222 direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

  13. Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

    International Nuclear Information System (INIS)

    Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

    2005-01-01

    In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

  14. Pengaruh Tekanan Parsial Oksigen Terhadap Koefisien Absorpsi Lapisan Tipis Indium Tin Oxide (ITO

    Directory of Open Access Journals (Sweden)

    Muslimin Muslimin

    2014-01-01

    Full Text Available DOWNLOAD PDFProses  absorpsi  foton  dengan  energi  tertentu  akan  mengeksitasi  elektron  darikeadaan energi yang lebih rendah ke keadaan energi yang lebih tinggi. Untuk menentukankoefisien  ini  secara  eksperimen  terutama  karena  adanya  pengaruh  interferensi  optis  daripola-pola  transmitansi  dan  reflektansi.  Tujuan  penelitian  ini  adalah  untuk  menentukanbesarnya absorpsi lapisan tipis In2O3: SnO2dengan berbagai kadar oksigen yang diberikanpada saat deposisi. Proses pelapisan dilakukan 90% berat In2O3 dan 10% berat SnO2padasubstrat kaca dengan cara sputtering. Pada saat sputtering dilakukan penambahan oksigentertentu  yaitu  2,50%,  3,70%,  5,10%,  6,15%  dan  8,90%  yang  dilakukan  deposisi  padatemperature 1750C. Hasil analisis teramati adanya pergeseran interferensi dan transmitansike arah panjang gelombang yang lebih pendek sebanding dengan kenaikan kadar oksigen.Pada  kadar  oksigen  2,50%  dan  3,70%  koefisien  absorbsi  makin  naik,  tetapi  pada  kadaroksigen  5,10%,  6,15%  dan   8,90%  koefisien  absorpsi  mulai  menurun.  Perlakuan  kadaroksigen  pada  saat  deposisi  lapisan  tipis  ITO  dapat  mempengaruhi  koefisien  absorpsilapisan tipis yang terbentuk.Kata kunci : Kadar oksigen, koefisien absorpsi

  15. Effects of different additives on bimetallic Au-Pt nanoparticles electrodeposited onto indium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ballarin, Barbara, E-mail: ballarin@ms.fci.unibo.i [Dipartimento di Chimica Fisica ed Inorganica, Universita di Bologna, V.le Risorgimento, 4, 40136-Bologna (Italy)] [INSTM, UdR Bologna (Italy); Gazzano, Massimo [ISOF-CNR, V. Selmi, 40126-Bologna (Italy); Tonelli, Domenica [Dipartimento di Chimica Fisica ed Inorganica, Universita di Bologna, V.le Risorgimento, 4, 40136-Bologna (Italy)] [INSTM, UdR Bologna (Italy)

    2010-09-01

    Bimetallic Au-Pt nanoparticles (Au-Pt{sub NPs}) have been synthesized using an electrochemical reduction approach. The effects of the addition of different additives in the electrodeposition bath namely KI, 1-nonanesulfonic acid sodium salt and Triton X-100 have been investigated. The structural characterization of the bimetallic nanoparticles has been carried out using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), UV-vis spectroscopy, X-ray diffraction (XRD) and cyclic voltammetry (CV). The Au-Pt{sub NPs} prepared in the presence of KI and Triton X-100 characterized by a relatively narrow size distribution as well as a higher particle density and surface coverage whereas no changes in the morphology were observed. These results suggest a dependence of the size and distribution of the bimetallic nanoparticles from the type and concentration of the additives employed.

  16. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  17. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  18. Phenomenon of discontinuous recrystallization in binary alloys of nickel-tin and copper-indium

    International Nuclear Information System (INIS)

    Cohn, J.A.; Abreu, R.M.D.; Solorzano, G.

    1988-01-01

    Microstructural evidences of grain formation in binary alloys of Ni-8,0%at. Sn and Cu-7,5%at. In are presented. The two materials were annealed for remove the stored energy by any plastic deformation. The motive powers for this phenomenon are discussed, specifically the precipitate/matrix interfaces. (C.G.C.) [pt

  19. Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices.

    Science.gov (United States)

    Ke, Shanming; Chen, Chang; Fu, Nianqing; Zhou, Hua; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao

    2016-10-26

    Sn-doped In 2 O 3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (solar cells (PSCs) with high efficiency.

  20. Thermodynamic properties of liquid copper-indium-tin alloys determined from e.m.f. measurements

    International Nuclear Information System (INIS)

    Jendrzejczyk-Handzlik, Dominika; Gierlotka, Wojciech; Fitzner, Krzysztof

    2009-01-01

    The thermodynamics properties of liquid Cu-In-Sn alloys were determined using solid oxide galvanic cells with zirconia electrolyte: (I)Re+kanthal,Cu x -In y -Sn (1-x-y) ,'In 2 O 3 '//ZrO 2 +(Y 2 O 3 )//NiO,Ni,Pt in the temperature range (973 to 1223) K. Applied In 2 O 3 can be either pure or in the solid solutions with SnO 2 . Thermodynamics properties of the liquid phase were described by the Redlich-Kister-Muggianu formula. Using the commercial software different phase relations in the ternary system were calculated and compared with experimental data found in the literature