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Sample records for nanocrystallite si based

  1. Enhanced memory performance by tailoring the microstructural evolution of (ZrO{sub 2}){sub 0.6}(SiO{sub 2}){sub 0.4} charge trapping layer in the nanocrystallites-based charge trap flash memory cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenjie; Xu, Hanni; Xia, Yidong; Yin, Jiang; Li, Aidong; Liu, Zhiguo [Nanjing University, Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing (China); Zhu, Xinhua [Nanjing University, Department of Physics and National and Laboratory of Solid State Microstructures, Nanjing (China); Yan, Feng [Nanjing University, School of Electronics Science and Engineering, Nanjing (China)

    2012-07-15

    ZrO{sub 2} nanocrystallites based charge trap memory cells by incorporating a (ZrO{sub 2}){sub 0.6}(SiO{sub 2}){sub 0.4} film as a charge trapping layer and amorphous Al{sub 2}O{sub 3} as tunneling and blocking layer were prepared and investigated. The precipitation reaction in charge trapping layer forming ZrO{sub 2} nanocrystallites during rapid thermal annealing was investigated by transmission electron microscopy. The density and size of ZrO{sub 2} nanocrystallites are the critical factors for controlling the charge storage characteristics. The ZrO{sub 2} nanocrystallites based memory cells after postannealing at 800 C for 60 s exhibit the best electrical characteristics and a low charge loss {proportional_to}5 % after 10{sup 5} write/erase cycles operation. (orig.)

  2. Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L E; Degoli, Elena; Cantele, G; Ossicini, Stefano; Ninno, D; Furthmueller, J; Bechstedt, F

    2007-01-01

    We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor (group-III) and donor (group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites

  3. The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    ZrO 2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO 2 ) 0.6 (SiO 2 ) 0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO 2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO 2 nanocrystallite-based memory capacitor after post-annealing at 850 °C for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of ∼25% over a period of 10 years (determined by extrapolating the charge loss curve measured experimentally), even at 85 °C. Such 850 °C-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications

  4. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  5. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller

    Science.gov (United States)

    Wageh, S.; Farooq, W. A.; Tataroğlu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2017-12-01

    The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV-VIS-NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×104 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems.

  6. Comparative study of as-implanted and pre-damaged ion-beam-synthesized ZnS nanocrystallites in SiO sub 2

    CERN Document Server

    Gao, K Y; Grosshans, I; Hipp, W; Stritzker, B

    2002-01-01

    The semiconducting ZnS nanocrystallites were synthesized by sequential high dose ion implantation of Zn and S in thermally grown SiO sub 2 on Si(1 0 0) and subsequent rapid thermal annealing (RTA). Some samples were pre-implanted with Ar ions in order to investigate the influence of radiation induced damage on the formation of ZnS nanocrystallites. The crystal structure of the ZnS crystallites, their size distribution and the concentration depth profile were analyzed by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission-electron-microscopy (XTEM). The XRD results indicate, that the phase transition from cubic zinc blende to hexagonal wurtzite structure of ZnS nanocrystallites begins at temperatures below 1000 degree sign C. The RBS results show a clear redistribution of Zn and S after RTA annealing. The concentration of Zn is seriously reduced due to strong diffusion towards deeper regions and the surface, while Ar pre-implantation partially suppressed the c...

  7. Controlling the opto-electronic properties of nc-SiOx:H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary

    Science.gov (United States)

    Das, Debajyoti; Samanta, Subhashis

    2018-01-01

    A systematic development of undoped nc-SiOx:H thin films from (SiH4 + CO2) plasma diluted by a combination of H2 and He has been investigated through structural, optical and electrical characterization and correlation. Gradual inclusion of O into a highly crystalline silicon network progressively produces a two-phase structure where Si-nanocrystals (Si-nc) are embedded into the a-SiOx:H matrix. However, at the intermediate grain boundary region the growth of ultra-nanocrystallites controls the effectiveness of the material. The ultra-nanocrystallites are the part and portion of crystallinity accommodating the dominant fraction of thermodynamically preferred 〈220〉 crystallographic orientation, most favourable for stacked layer device performance. Atomic H plays a dominant role in maintaining an improved nanocrystalliny in the network even during O inclusion, while He in its excited state (He*) maintains a good energy balance at the grain boundary and produces a significant fraction of ultra-nanocrystalline component which has been demonstrated to organize the energetically favourable 〈220〉 crystallographic orientation in the network. The nc-SiOx:H films, maintaining proportionally good electrical conductivity over an wide range of optical band gap, remarkably low microstructure factor and simultaneous high crystalline volume fraction dominantly populated by ultra-nanocrystallites of 〈220〉 crystallographic orientation mostly at the grain boundary, have been obtained in technologically most popular 13.56 MHz PECVD SiH4 plasma even at a low substrate temperature ∼250 °C, convenient for device fabrication.

  8. Effect of backbond oxidation on silicon nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L.E.; Furthmueller, J.; Bechstedt, F.

    2004-01-01

    We employ density functional calculations to study properties of Si nanocrystals after backbond oxidation in comparison to the ones passivated with hydrogen or hydroxyl. Structural parameters, pair excitation energies, quasiparticle gaps, and electrostatic potentials vary significantly in dependence on degree of oxidation and surface passivation. The variations are discussed within a quantum confinement picture. Blueshifts and redshifts observed in photoluminescence are related to the size of the Si nanocrystallite cores and the oxygen incorporation via passivation with group OH or oxidation

  9. Analysis of PL spectrum shape of Si-based materials as a tool for determination of Si crystallites' distribution

    Energy Technology Data Exchange (ETDEWEB)

    Khomenkova, L., E-mail: khomen@isp.kiev.ua

    2014-11-15

    This paper represents the analysis of the shape of photoluminescence spectra of Si-based nano-materials vs. energy of excitation light and temperature of measurements as a tool for the estimation of Si nanocrystallites' distribution. The samples fabricated by electrochemical etching (allowed different termination of Si nanocrystallites to be obtained) were used as modeling material. Bright emission at room temperature was observed for oxygen-terminated Si nanocrytallites, whereas hydrogen-terminated samples emit at low temperatures only. For most samples the photoluminescence spectrum was found to be complex, demonstrating competitive emission from Si crystallites and oxide defects. In latter case to separate the contribution of each recombination channel and to obtain information about crystallite distribution, low-temperature measurements of photoluminescence spectra under different excitation light energy were performed.

  10. Endo-Fullerene and Doped Diamond Nanocrystallite Based Models of Qubits for Solid-State Quantum Computers

    Science.gov (United States)

    Park, Seongjun; Srivastava, Deepak; Cho, Kyeongjae; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Models of encapsulated 1/2 nuclear spin H-1 and P-31 atoms in fullerene and diamond nanocrystallite, respectively, are proposed and examined with ab-initio local density functional method for possible applications as single quantum bits (qubits) in solid-state quantum computers. A H-1 atom encapsulated in a fully deuterated fullerene, C(sub 20)D(sub 20), forms the first model system and ab-initio calculation shows that H-1 atom is stable in atomic state at the center of the fullerene with a barrier of about 1 eV to escape. A P-31 atom positioned at the center of a diamond nanocrystallite is the second model system, and 3 1P atom is found to be stable at the substitutional site relative to interstitial sites by 15 eV, Vacancy formation energy is 6 eV in diamond so that substitutional P-31 atom will be stable against diffusion during the formation mechanisms within the nanocrystallite. The coupling between the nuclear spin and weakly bound (valance) donor electron coupling in both systems is found to be suitable for single qubit applications, where as the spatial distributions of (valance) donor electron wave functions are found to be preferentially spread along certain lattice directions facilitating two or more qubit applications. The feasibility of the fabrication pathways for both model solid-state qubit systems within practical quantum computers is discussed with in the context of our proposed solid-state qubits.

  11. The band gap in silicon nanocrystallites

    International Nuclear Information System (INIS)

    Ranjan, V.; Kapoor, Manish; Singh, Vijay A.

    2002-01-01

    The gap in semiconductor nanocrystallites has been extensively studied both theoretically and experimentally over the last two decades. We have compared a recent 'state-of-the-art' theoretical calculation with a recent 'state-of-the-art' experimental observation of the gap in Si nanocrystallite. We find that the two are in substantial disagreement, with the disagreement being more pronounced at smaller sizes. Theoretical calculations appear to overestimate the gap. To reconcile the two we present two scenarios. (i) Recognizing that the experimental observations are for a distribution of crystallite sizes, we proffer a phenomenological model to reconcile the theory with the experiment. We suggest that similar considerations must dictate comparisons between the theory and experiment vis-a-vis other properties such as radiative rate, decay constant, and absorption coefficient. (ii) Either surface passivation or surface orientation may also resolve the conflict between the theory and the experiment. We have carried out tight-binding calculations on silicon clusters to study the role of surface passivation and surface orientation. (author)

  12. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    International Nuclear Information System (INIS)

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  13. BAND STRUCTURE OF NON-STEIOCHIOMETRIC LARGE-SIZED NANOCRYSTALLITES

    Directory of Open Access Journals (Sweden)

    I.V.Kityk

    2004-01-01

    Full Text Available A band structure of large-sized (from 20 to 35nm non-steichiometric nanocrystallites (NC of the Si2-xCx (1.04 < x < 1.10 has been investigated using different band energy approaches and a modified Car-Parinello molecular dynamics structure optimization of the NC interfaces. The non-steichiometric excess of carbon favors the appearance of a thin prevailingly carbon-contained layer (with thickness of about 1 nm covering the crystallites. As a consequence, one can observe a substantial structure reconstruction of boundary SiC crystalline layers. The numerical modeling has shown that these NC can be considered as SiC reconstructed crystalline films with thickness of about 2 nm covering the SiC crystallites. The observed data are considered within the different one-electron band structure methods. It was shown that the nano-sized carbon sheet plays a key role in a modified band structure. Independent manifestation of the important role played by the reconstructed confined layers is due to the experimentally discovered excitonic-like resonances. Low-temperature absorption measurements confirm the existence of sharp-like absorption resonances originating from the reconstructed layers.

  14. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  15. Preparation of CoFeO Nanocrystallites by Solvothermal Process and Its Catalytic Activity on the Thermal Decomposition of Ammonium Perchlorate

    Directory of Open Access Journals (Sweden)

    Shusen Zhao

    2010-01-01

    Full Text Available Nanometer cobalt ferrite (CoFe2O4 was synthesized by polyol-medium solvothermal method and characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, and selected area electron diffraction (SAED. Further, the catalytic activity and kinetic parameters of CoFe2O4 nanocrystallites on the thermal decomposition behavior of ammonium perchlorate (AP have been investigated by thermogravimetry and differential scanning calorimetry analysis (TG-DSC. The results imply that the catalytic performance of CoFe2O4 nanocrystallites is significant and the decrease in the activation energy and the increase in the rate constant for AP further confirm the enhancement in catalytic activity of CoFe2O4 nanocrystallites. A mechanism based on an proton transfer process has also been proposed for AP in the presence of CoFe2O4 nanocrystallites.

  16. Formation Mechanism of Magnesium Ammonium Phosphate Stones: A Component Analysis of Urinary Nanocrystallites

    Directory of Open Access Journals (Sweden)

    Xin-Yuan Sun

    2015-01-01

    Full Text Available The components of urinary nanocrystallites in patients with magnesium ammonium phosphate (MAP stones were analyzed by X-ray diffraction (XRD, Fourier-transform infrared (FT-IR spectrometer, high-resolution transmission electron microscopy (HRTEM, selected area electron diffraction (SAED, fast Fourier transformation (FFT, and energy-dispersive X-ray spectroscopy (EDS. The main components of the stones were MAP hexahydrate (MAP·6H2O, magnesium hydrogen phosphate trihydrate (MgHPO4·3H2O, and a small amount of calcium phosphate (CaP, while the main components of urinary nanocrystallites were MgHPO4·3H2O, CaP, and MAP monohydrate (MAP·H2O. MAP·H2O induced the formation of MAP stones as seed crystals. MgHPO4·3H2O was accompanied by the appearance of MAP·6H2O. The formation mechanism of MAP stones and influencing factors were discussed on the basis of the components of urine nanocrystallites. A model diagram of MAP stone formation was also put forward based on the results. Formation of MAP stones was closely related to the presence of high amounts of MAP crystallites in urine. Urinary crystallite condition and changes in urine components could indicate the activity of stone diseases.

  17. Stabilization of metastable tetragonal zirconia nanocrystallites by surface modification

    DEFF Research Database (Denmark)

    Nielsen, Mette Skovgaard; Almdal, Kristoffer; Lelieveld, A. van

    2011-01-01

    Metastable tetragonal zirconia nanocrystallites were studied in humid air and in water at room temperature (RT). A stabilizing effect of different surfactants on the tetragonal phase was observed. Furthermore, the phase stability of silanized metastable tetragonal zirconia nanocrystallites was te...... exposure to humidity. Only silanes and phosphate esters of these were able to stabilize the tetragonal phase in water. Even as small amounts of silanes as 0.25 silane molecule per nm2 are able to stabilize the tetragonal phase in water at RT. Aminopropyl trimethoxy silane and γ...

  18. Structural and optical properties of Co-doped ZnO nanocrystallites prepared by a one-step solution route

    International Nuclear Information System (INIS)

    Li Ping; Wang Sha; Li Jibiao; Wei Yu

    2012-01-01

    Zinc oxide (ZnO) nanocrystallites with different Co-doping levels were successfully synthesized by a simple one-step solution route at low temperature (95 deg. C) in this study. The structure and morphology of the samples thus obtained were characterized by XRD, EDS, XPS and FESEM. Results show that cobalt ions, in the oxidation state of Co 2+ , replace Zn 2+ ions in the ZnO lattice without changing its wurtzite structure. The dopant content varies from 0.59% to 5.39%, based on Co-doping levels. The pure ZnO particles exhibit well-defined 3D flower-like morphology with an average size of 550 nm, while the particles obtained after Co-doping are mostly cauliflower-like nanoclusters with an average size of 120 nm. Both the flower-like pure ZnO and the cauliflower-like Co:ZnO nanoclusters are composed of densely arrayed nanorods. The optical properties of the ZnO nanocrystallites following Co-doping were also investigated by UV-Visible absorption and Photoluminescence spectra. Our results indicate that Co-doping can change the energy-band structure and effectively adjust the luminescence properties of ZnO nanocrystallites. - Highlights: → Co-doped ZnO nanocrystallites were synthesized via a simple one-step solution route. → Co 2+ ions incorporated into the ZnO lattice without changing its wurtzite structure. → Co-doping changed the energy band structure of ZnO. → Co-doping effectively adjusted the luminescence properties of ZnO nanocrystallites.

  19. Structural and optical properties of Co-doped ZnO nanocrystallites prepared by a one-step solution route

    Energy Technology Data Exchange (ETDEWEB)

    Li Ping, E-mail: lipingchina@yahoo.com.cn [Provincial Key Laboratory of Inorganic Nanomaterials, School of Chemistry and Materials Science, Hebei Normal University, 113 Yuhua Road, Shijiazhuang 050016, Hebei (China); Wang Sha; Li Jibiao; Wei Yu [Provincial Key Laboratory of Inorganic Nanomaterials, School of Chemistry and Materials Science, Hebei Normal University, 113 Yuhua Road, Shijiazhuang 050016, Hebei (China)

    2012-01-15

    Zinc oxide (ZnO) nanocrystallites with different Co-doping levels were successfully synthesized by a simple one-step solution route at low temperature (95 deg. C) in this study. The structure and morphology of the samples thus obtained were characterized by XRD, EDS, XPS and FESEM. Results show that cobalt ions, in the oxidation state of Co{sup 2+}, replace Zn{sup 2+} ions in the ZnO lattice without changing its wurtzite structure. The dopant content varies from 0.59% to 5.39%, based on Co-doping levels. The pure ZnO particles exhibit well-defined 3D flower-like morphology with an average size of 550 nm, while the particles obtained after Co-doping are mostly cauliflower-like nanoclusters with an average size of 120 nm. Both the flower-like pure ZnO and the cauliflower-like Co:ZnO nanoclusters are composed of densely arrayed nanorods. The optical properties of the ZnO nanocrystallites following Co-doping were also investigated by UV-Visible absorption and Photoluminescence spectra. Our results indicate that Co-doping can change the energy-band structure and effectively adjust the luminescence properties of ZnO nanocrystallites. - Highlights: > Co-doped ZnO nanocrystallites were synthesized via a simple one-step solution route. > Co{sup 2+} ions incorporated into the ZnO lattice without changing its wurtzite structure. > Co-doping changed the energy band structure of ZnO. > Co-doping effectively adjusted the luminescence properties of ZnO nanocrystallites.

  20. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  1. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    Science.gov (United States)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  2. Synthesis and characterization of CdS nanocrystallites and OMWCNT-supported cadmium sulfide composite and their photocatalytic activity under visible light irradiation

    International Nuclear Information System (INIS)

    Pawar, Amol S.; Garje, Shivram S.; Revaprasadu, Neerish

    2016-01-01

    CdS nanocrystallites and CdS- oxidized multiwalled carbon nanotubes (OMWCNT) composite were prepared by the solvothermal decomposition of a single-source molecular precursor, [Cd(pip.dtc) 2 ] (pip.dtc = piperidine dithiocarbamate) in the presence of ethylene glycol. The as prepared CdS nanocrystallites and CdS-OMWCNT composite were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), transmission electron microscopy (TEM), UV-vis and Raman spectroscopy. Peak broadening in the XRD shows the formation of nanocrystalline CdS. TEM images of CdS nanocrystallites revealed the nearly spherical shape morphology of the particles, whereas, TEM images of composite showed the deposition of CdS nanocrystallites on the OMWCNT. EDX measurements matches with a 1:1 stoichiometry of Cd and S in CdS nanocrystallites, whereas, that of the composite showed the presence of Cd and S along with C. The vibrational properties of CdS nanocrystallites and their composite with OMWCNT were studied by Raman spectroscopy. Furthermore, the photocatalytic activity studies for the degradation of methylene blue under visible light irradiation using these materials were carried out. The surface area calculated using BET surface analyzer for CdS-OMWCNT composite (148.31 m 2 /g) was found to be more compared to bare CdS nanocrystallites (56.78 m 2 /g). The CdS-OMWCNT composite exhibited very good photocatalytic activity for the degradation of methylene blue under visible light irradiation which has been attributed to the increased surface area and synergistic effect in the composite compared to bare CdS nanocrystallites. - Highlights: • The carbon based nanocomposite of CdS (CdS-OMWCNT) have been prepared. • Simple solvothermal decomposition method has been used. • Single-source molecular precursor in presence of carbon nanotubes has been employed. • The photocatalytic activity of CdS NPs and CdS-OMWCNT composite have been

  3. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  4. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  5. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  6. Cobalt Ferrite Nanocrystallites for Sustainable Hydrogen Production Application

    Directory of Open Access Journals (Sweden)

    Rajendra S. Gaikwad

    2011-01-01

    Full Text Available Cobalt ferrite, CoFe2O4, nanocrystalline films were deposited using electrostatic spray method and explored in sustainable hydrogen production application. Reflection planes in X-ray diffraction pattern confirm CoFe2O4 phase. The surface scanning microscopy photoimages reveal an agglomeration of closely-packed CoFe2O4 nanoflakes. Concentrated solar-panel, a two-step water splitting process, measurement technique was preferred for measuring the hydrogen generation rate. For about 5 hr sustainable, 440 mL/hr, hydrogen production activity was achieved, confirming the efficient use of cobalt ferrite nanocrystallites film in hydrogen production application.

  7. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  8. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  9. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  10. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  11. Precipitation of heterogeneous nanostructures: Metal nanoparticles and dielectric nanocrystallites

    International Nuclear Information System (INIS)

    Masai, Hirokazu; Takahashi, Yoshihiro; Fujiwara, Takumi; Tokuda, Yomei; Yoko, Toshinobu

    2010-01-01

    Heterogeneous precipitation of nanocrystallites of metallic Bi and anatase was observed in CaO-Bi 2 O 3 -B 2 O 3 -Al 2 O 3 -TiO 2 glass-ceramics. Addition of AlN reduced the Bi 2 O 3 to Bi metal nanoparticles, which were uniformly dispersed in the glass. After heat-treatment of the Bi-precipitated glass around the glass transition temperature, nanocrystalline anatase precipitated out without aggregation of the Bi metal particles. It was found that the anatase nanocrystal size was affected by the distance between a nanocrystal and a precipitated Bi nanoparticle. The glass-ceramic produced is a functional material containing a random dispersion of different types of nanoparticles with different dielectric constants.

  12. Electrodeposited Ni-W magnetic thin films with columnar nanocrystallites

    International Nuclear Information System (INIS)

    Sulitanu, N.; Brinza, F.

    2002-01-01

    Nanocrystalline Ni-W thin films (140 nm) containing from zero to 18 wt % W were electrolytically prepared and structural and magnetic characterized. XRD, SEM and TEM investigations have revealed that all segregated Ni columns are fcc-type whose [111] axis is oriented perpendicular to the film plane and have 140 nm in height and 6-27 nm in diameter. Depending on film composition, two types of nanostructures were observed: (a) single-phase nanostructure ( i nterphases , namely W enriched particles boundaries, and (b) two-phase nanostructure (7-18 wt %) in which a second Ni-W amorphous phase or even amorphous-disordered mixture separates the magnetic columnar Ni nanocrystallites (d = 6-14 nm). The columnar crystallites have an easy magnetization direction along their long axis mainly due to the in-plane internal biaxial stresses. Magnetic characteristics of prepared thin films are presented. (Authors)

  13. Combined in situ PXRD and PDF study of hydrothermal formation of α- and β-MnO2 nanocrystallites

    DEFF Research Database (Denmark)

    Birgisson, Steinar; Shen, Yanbin; Saha, Dipankar

    resolved powder X-ray diffraction (PXRD) and total scattering (TS) data is then measured using synchrotron radiation.[5, 6] By Rietveld refinement of PXRD data, information about the quantity of different crystalline phases, unit cell size, crystallite size and morphology as function of reaction time...... it looks like the smallest α-MnO2 nanocrystallites transform to β-MnO2 first, before subsequent transformation of larger crystallites. 1. Thackeray, M.M., Manganese oxides for lithium batteries. Progress in Solid State Chemistry, 1997. 25(1–2): p. 1-71. 2. Palomares, V., et al., Update on Na-based battery...

  14. Size distribution of BaF2 nanocrystallites in transparent glass ceramics

    International Nuclear Information System (INIS)

    Bocker, Christian; Bhattacharyya, Somnath; Hoeche, Thomas; Ruessel, Christian

    2009-01-01

    In glasses with the composition 1.9 Na 2 O-15 K 2 O-7.5 Al 2 O 3 -69.6 SiO 2 -6 BaF 2 (in mol.%), BaF 2 nanocrystalline precipitates are formed upon heat treatment. Using dark-field and bright-field transmission electron micrographs, crystallite size distributions are obtained for samples crystallized at various temperatures. According to the 'tomato-salad problem', the size distributions are corrected and then compared to various theories of grain growth taking into account coarsening of the crystallites during heat treatment. The experimental crystallite size distributions show for smaller mean crystallite sizes a more symmetric shape in comparison to the theories of Lifshitz-Slyozov-Wagner (LSW) or Brailsford and Wynblatt (B and W). With increasing mean crystallite sizes to about 18 nm at higher heat-treatment temperatures, the full width at half maximum of the observed distributions decreases and becomes even narrower than the LSW function. These findings indicate that in the investigated nano glass ceramics no coarsening by Ostwald ripening or coalescence occurs. This is explained by the formation of a diffusion barrier around each nanocrystallite which limits the size of the crystallites and hence results in such a narrow and uniform crystallite size distribution.

  15. A facile synthesis of ZnS nanocrystallites by pyrolysis of single

    Indian Academy of Sciences (India)

    )2 and ZnCl2 (cinnamtsczH)2 (cinnamtsczH = cinnamaldehyde thiosemicarbazone) as single source precursors. The prepared ZnS nanocrystallites were characterized by powder X-ray diffraction (XRD), transmission electron microscopy ...

  16. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  17. Fe-Mn-Si based shape memory alloys

    International Nuclear Information System (INIS)

    Hsu, T.Y.

    2000-01-01

    Characteristics of martensitic transformation fcc(γ)→hcp(ε) in Fe-Mn-Si based alloys are briefly reviewed. By analyzing the influences of constituents and treatments on shape memory effect (SME) in Fe-Mn-Si, the main factors controlling SME are summarized as austenite strengthening, stacking fault energy (probability) and antiferromagnetic temperature. Contribution of thermomechanical training to SME is introduced. The Fe-Mn-Si-RE (rare earth elements) and Fe-Mn-Si-Cr-N alloys are recommended as two novel shape memory alloys with superior SME. (orig.)

  18. ZnO-SiO{sub 2} based nanocomposites prepared by a modified sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Grigorie, Alexandra Carmen [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania); Muntean, Cornelia, E-mail: cornelia.muntean@upt.ro [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania); Politehnica University Timisoara, Research Institute for Renewable Energy, 2 Piata Victoriei, RO-300006, Timisoara (Romania); Vlase, Titus [West University of Timisoara, 4 V. Parvan Blv., RO-300223, Timisoara (Romania); Locovei, Cosmin [Politehnica University Timisoara, Research Institute for Renewable Energy, 2 Piata Victoriei, RO-300006, Timisoara (Romania); Politehnica University Timisoara, Faculty of Mechanical Engineering, 1 Mihai Viteazul Blv., RO-300222, Timisoara (Romania); Stefanescu, Mircea [Politehnica University Timisoara, Faculty of Industrial Chemistry and Environmental Engineering, 6 V. Parvan Blv., RO-300223, Timisoara (Romania)

    2017-01-15

    This paper presents a study on nanocomposites formation in ZnO-SiO{sub 2} systems with different ZnO:SiO{sub 2} molar ratios (1:4, 1:1, and 4:1), prepared employing a sol-gel method modified by an original procedure. The evolution of ZnO-SiO{sub 2} systems depending on the composition and temperature was studied by thermal analysis, Fourier transform infrared spectroscopy, X-ray diffractometry and transmission electron microscopy. Zn(II) carboxylate was synthesized in situ in hybrid silica gels by redox reaction between zinc nitrate and 1,3-propanediol. Its thermal decomposition at low temperatures led to ZnO dispersed in the pores of silica matrix. Only for the 4:1 system, at 400 and 600 °C, ZnO nanocrystallites (average size ∼9 nm) embedded in the amorphous silica matrix were obtained, the other systems being amorphous. Whatever the mixture composition is, above 600 °C, ZnO reacts with SiO{sub 2} to form zinc silicate. At 800 °C, for both 1:4 and 1:1 systems, poor crystallized β-Zn{sub 2}SiO{sub 4} and α-Zn{sub 2}SiO{sub 4} phases embedded in silica matrix were formed. Increasing the temperature, at 1000 °C, only for 1:1 system, β-Zn{sub 2}SiO{sub 4} phase turned into single phase α-Zn{sub 2}SiO{sub 4} (average crystallites size 28.3 nm). For 4:1 composition, at 800 and 1000 °C, systems consisting of ZnO and α-Zn{sub 2}SiO{sub 4} nanocrystallites dispersed in silica were obtained. - Highlights: • By modified sol-gel method, ZnO/SiO{sub 2} and Zn{sub 2}SiO{sub 4}/SiO{sub 2} nanocomposites were obtained. • ZnO dispersed in silica matrix results from zinc carboxylate thermal decomposition. • Zinc carboxylate was synthesized in situ in hybrid silica gels via redox reaction. • Evolution of ZnO in SiO{sub 2} matrix depends on temperature and system composition.

  19. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Science.gov (United States)

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  20. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  1. siRNA delivery with lipid-based systems

    DEFF Research Database (Denmark)

    Foged, Camilla

    2012-01-01

    A key hurdle for the further development of RNA interference (RNAi) therapeutics like small interfering RNA (siRNA) is their safe and effective delivery. Lipids are promising and versatile carriers because they are based on Nature's own building blocks and can be provided with properties which......RNA into more hydrophobic lipoplexes, which promote passage of the siRNA across cellular membrane barriers, especially when lipids are added that facilitate membrane fusion. Despite these attractive features, siRNA delivery vehicles are facing a number of challenges such as the limited delivery efficiency...

  2. Lanthanum and cerium co-modified Ni/SiO2 catalyst for CO methanation from syngas

    Science.gov (United States)

    Gong, Dandan; Li, Shuangshuang; Guo, Shaoxia; Tang, Honggui; Wang, Hong; Liu, Yuan

    2018-03-01

    Sintering of active metal nanoparticles (NPs) and carbon deposition is critical problems for many metal catalysts, such as nickel based catalysts for generating methane from syngas. To improve the resistance to the sintering and carbon deposition, a new scheme was proposed in this work. Lanthanum and cerium co-modified Ni/SiO2 catalysts were synthesized by using perovskite type oxide of La1-xCexNiO3 loaded on SiO2 as the precursor. In a nanocrystallite of La1-xCexNiO3, ions of nickel, lanthanum and cerium are evenly mixed at atomic level and confined in the nanocrystallite, therefore, Ni NPs and the two promoters of La2O3 and CeO2 should be in close contact and highly dispersed on SiO2 after reduction. The catalysts were characterized by using XRD, TEM, BET, H2-TPD, XPS, TG and Raman techniques. Compared with the mono-promoted catalysts, the bi-promoted La0.75Ce0.25NiO3/SiO2 showed much better resistance to carbon deposition, higher resistance to sintering and higher activity for CO methanation, which are attributed to co-eliminating effect of the two promoters for the deposited carbon, confinement of the interacted two promoters for Ni NPs and the higher dispersion of Ni NPs derived from the smaller size of La0.75Ce0.25NiO3.

  3. Laser operated optical features in β-BaTeMo2O9:Cr3+ nanocrystallites

    International Nuclear Information System (INIS)

    Majchrowski, A.; Jaroszewicz, L.R.; Fedorchuk, A.O.; Kityk, I.V.

    2015-01-01

    An increase of second order nonlinear optical efficiency was established for Cr 3+ doped β-BaTeMo 2 O 9 (BTMO) nanocrystallites (with sizes varying within up to 150 nm range) under influence of two coherent beams of 532 nm nanosecond pulsed lasers at power densities up to 600 MW/cm 2 . It was found that maximal enhancement of optical second harmonic generation was achieved for BTMO:Cr 3+ nanocrystallites possessing sizes about 60–80 nm. Occurrence of some quasi-periodic space radial grating was observed as well. This is a consequence of competition between the photo-polarization and photo-thermal effects. Band structure simulations within a framework of the norm-conserving pseudopotential were performed. - Highlights: • BMTO nanocrystallites with the sizes 60 nm–120 nm were synthesized. • Photoinduced SHG is found. • The effect is caused by additional photopolarization

  4. Mo-based compounds for SiC-SiC joints

    Energy Technology Data Exchange (ETDEWEB)

    Magnani, G.; Beaulardi, L.; Mingazzini, C. [ENEA-Faenza (Italy). New Material Div.; Marmo, E. [Fabbricazioni Nucleari S.p.A., Bosco Mavengo (Italy)

    2002-07-01

    New method to joint silicon carbide-based material was developed. It was based on mixture composed mainly by molybdenum silicides. This mixture was tested as brazing mixture with several types of silicon carbide-based material. Microstructural examination of the joint showed that brazing mixture reacted with substrate to form silicon carbide on the surface, while two different molybdenum silicides were identified inside the joint (MoSi{sub 2} and Mo{sub 4.8}Si{sub 3}C{sub 0.6}). Preliminary oxidation tests performed by means of TGA showed high oxidation resistance of this joint over 1000 C making it very promising for high temperature application like ceramic heat exchanger. (orig.)

  5. STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, Lars; Hallam, Toby; Curson, Neil J.; Simmons, Michelle Y.; Clark, Robert G

    2003-05-15

    We investigate the morphology of epitaxial Si layers grown on clean and on hydrogen terminated Si(0 0 1) to explore the growth strategy for the fabrication of a Si-based quantum computer. We use molecular beam epitaxy to deposit 5 monolayers of silicon at a temperature of 250 deg. C and scanning tunnelling microscopy to image the surface at room temperature after growth and after various rapid annealing steps in the temperature range of 350-600 deg. C. The epitaxial layer grown on the hydrogenated surface shows a significantly higher surface roughness due to a lower mobility of silicon surface atoms in the presence of hydrogen. Annealing at temperatures {>=}550 deg. C reduces the roughness of both epitaxial layers to the value of a clean silicon surface. However, the missing dimer defect density of the epitaxial layer grown on the hydrogenated surface remains higher by a factor of two compared to the layer grown on clean Si(0 0 1). Our results suggest a quantum computer growth strategy in which the hydrogen resist layer is desorbed before the epitaxial silicon layer is grown at low temperature to encapsulate phosphorus quantum bits.

  6. Orientation of quartz nanocrystallites in the silicon lattice

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

    2006-01-01

    Full text: Basing on the study of medium angle diffuse X-ray scattering from silicon single crystals, it was supposed to be due to rod like oxygen precipitates. It was shown by us later, that depending on the growth conditions, as-grown silicon single crystals contain quartz crystal inclusions at an amount of 0.3 / 0.5 wt. % . Since it has not been done before, the aim of this work was to study the shape and orientation of quartz inclusions relative to a chosen axis of the silicon crystal lattice. We studied p-Si single crystals of one crucible origin with the specific resistance ρ 0 ≅ 1/10 Ohm· cm with different cut surfaces parallel to the crystal planes (100), (110) and (111). All the samples were cut and polished in the bar form with the sizes of 20x12x1.5 mm 3 . The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N O ≅ 2/ 4 x10 17 cm -3 and N B ≅ 3· 10 1 5 c m -3 . Structure was analyzed at the set-up DRON-3M ( λ Cu K∝ = 0.1542 nm) at the room temperature in the angle range of angles 2Θ = 10/70 deg. The diffraction spectrum of the sample cut in (111) includes 5 selective reflections and the only diffuse one at 2Θ≅ 20 deg (d/n≅ 0.3136 nm), having a large width 0.1032 rad, which is due to presence of amorphous SiO x precipitate in the surface layer of silicon single crystal. The dominative selective line with d/n≅ 0.3136 nm at 2Θ≅ 28.5 deg belongs to reflection from (111) planes of the silicon lattice and the second less intensive one comes from the same planes with Cu K β radiation. Another selective reflection of a medium intensity at 2Θ≅ 59 deg with d/n≅ 0.1568 nm is its second order (222) and forbidden by the weakening laws. The rest narrow but weak lines with d/n≅ 0.3345 nm at 2Θ≅ 26.6 deg and 0.2468 nm at≅36.6 deg correspond to the diffraction reflections (101) and (110) from the crystal quartz lattice SiO 2 . It means that they are caused by optimally oriented quartz

  7. Synthesis of Co9S8 and CoS nanocrystallites using Co(II ...

    Indian Academy of Sciences (India)

    Synthesis of Co9S8 and CoS nanocrystallites using Co(II) ... hydrothermal processing,24,25 etc. However, the ..... Cobalt sulphide nanoparticles were prepared by refluxing .... CdS nanostructures in ethylenediamine.28,29 Figure 2a shows.

  8. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

    Science.gov (United States)

    Al-Kabi, Sattar H. Sweilim

    Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

  9. Atomic structure and thermal stability of interfaces between metallic glass and embedding nano-crystallites revealed by molecular dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Gao, X.Z.; Yang, G.Q.; Xu, B.; Qi, C.; Kong, L.T., E-mail: konglt@sjtu.edu.cn; Li, J.F.

    2015-10-25

    Molecular dynamics simulations were performed to investigate the atomic structure and thermal stability of interfaces formed between amorphous Cu{sub 50}Zr{sub 50} matrix and embedding B2 CuZr nano-crystallites. The interfaces are found to be rather abrupt, and their widths show negligible dependence on the nano-crystallite size. Local atomic configuration in the interfacial region is dominated by geometry characterized by Voronoi polyhedra <0,5,2,6> and <0,4,4,6>, and the contents of these polyhedra also exhibit apparent size dependence, which in turn results in an increasing trend in the interfacial energy against the nano-crystallite size. Annealing of the interface models at elevated temperatures will also enrich these characterizing polyhedra. While when the temperature is as high as the glass transition temperature of the matrix, growth of the nano-crystallites will be appreciable. The growth activation energy also shows size dependence, which is lower for larger nano-crystallites, suggesting that large nano-crystallites are prone to grow upon thermal disturbance. - Highlights: • Special clusters characterizing the local geometry are abundant in the interfaces. • Their content varies with the size of the embedding nano-crystallite. • In turn, size dependences in interfacial thermodynamics and kinetics are observed.

  10. Preparation and Oxidation Resistance of Mo-Si-B Coating on Nb-Si Based Alloy Surface

    Directory of Open Access Journals (Sweden)

    PANG Jie

    2018-02-01

    Full Text Available Mo-Si-B coating was prepared on Nb-Si alloys to improve the high-temperature oxidation. The influence of the halide activators (NaF and AlF3 on Si-B co-depositing to obtain Mo-Si-B coating on Nb-Si alloys was analyzed by thermochemical calculations. The results show that NaF proves to be more suitable than AlF3 to co-deposit Si and B. Then Mo-Si-B can be coated on Nb-Si based alloys using detonation gun spraying of Mo followed by Si and B co-deposition. The fabricated coatings consist of outer MoSi2 layer with fine boride phase and inner unreacted Mo layer. The mass gain of the Mo-Si-B coating is 1.52mg/cm2 after oxidation at 1250℃ for 100h. The good oxidation resistance results in a protective borosilicate scale formed on the coating.

  11. Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Byun, J.H.

    2010-01-01

    The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

  12. Radiation response of SiC-based fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Battelle Pacific Northwest Labs., Richland, WA (United States); Kohyama, A. [Inst. of Advanced Energy, Kyoto Univ. (Japan); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1998-10-01

    Loss of strength in irradiated fiber-reinforced SiC/SiC composite generally is related to degradation in the reinforcing fiber. To assess fiber degradation, the density and length changes were determined for four types of SiC-based fibers (Tyranno, Nicalon CG, Hi Nicalon and Dow X) after high temperature (up to 1000 C) and high dose (up to 80 dpa-SiC) irradiations. For the fibers with nonstoichiometric compositions (the first three types in the list), the fiber densities increased from 6% to 12%. In contrast, a slight decrease in density (<1%) was observed for the Dow X fiber with a quasi-stoichiometric composition. Fiber length changes (0-5.6% shrinkage) suggested small mass losses (1-6%) had occurred for irradiated uncoated fibers. In contrast, excessive linear shrinkage of the pyrocarbon-coated Nicalon CG and Tyranno fibers (7-9% and 16-32%, respectively) indicated that much larger mass losses (11-84%) had occurred for these coated fibers. Crystallization and crystal growth were observed to have taken place at fiber surfaces by SEM and in the bulk by XRD, moreso for irradiated Nicalon CG than for Hi Nicalon fiber. The radiation response of the quasi-stoichiometric Dow X fiber was the most promising. Further testing of this type fiber is recommended. (orig.) 11 refs.

  13. Theoretical approach to embed nanocrystallites into a bulk crystalline matrix and the embedding influence on the electronic band structure and optical properties of the resulting heterostructures.

    Science.gov (United States)

    Balagan, Semyon Anatolyevich; Nazarov, Vladimir U; Shevlyagin, Alexander Vladimirovich; Goroshko, Dmitrii L; Galkin, N G

    2018-05-03

    We develop an approach and present results of the combined molecular dynamics and density functional theory calculations of the structural and optical properties of the nanometer-sized crystallites embedded in a bulk crystalline matrix. The method is designed and implemented for both compatible and incompatible lattices of the nanocrystallite (NC) and the host matrix, when determining the NC optimal orientation relative to the matrix constitutes a challenging problem. We suggest and substantiate an expression for the cost function of the search algorithm, which is the energy per supercell generalized for varying number of atoms in the latter. The epitaxial relationships at the Si/NC interfaces and the optical properties are obtained and found to be in a reasonable agreement with experimental data. Dielectric functions show significant sensitivity to the NC's orientation relative to the matrix at energies below 0.5 eV. © 2018 IOP Publishing Ltd.

  14. Theoretical approach to embed nanocrystallites into a bulk crystalline matrix and the embedding influence on the electronic band structure and optical properties of the resulting heterostructures

    Science.gov (United States)

    Balagan, Semyon A.; Nazarov, Vladimir U.; Shevlyagin, Alexander V.; Goroshko, Dmitrii L.; Galkin, Nikolay G.

    2018-06-01

    We develop an approach and present results of the combined molecular dynamics and density functional theory calculations of the structural and optical properties of the nanometer-sized crystallites embedded in a bulk crystalline matrix. The method is designed and implemented for both compatible and incompatible lattices of the nanocrystallite (NC) and the host matrix, when determining the NC optimal orientation relative to the matrix constitutes a challenging problem. We suggest and substantiate an expression for the cost function of the search algorithm, which is the energy per supercell generalized for varying number of atoms in the latter. The epitaxial relationships at the Si/NC interfaces and the optical properties are obtained and found to be in a reasonable agreement with experimental data. Dielectric functions show significant sensitivity to the NC’s orientation relative to the matrix at energies below 0.5 eV.

  15. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  16. A sensitive optical sensor based on DNA-labelled Si@SiO2 core ...

    Indian Academy of Sciences (India)

    2017-10-31

    Oct 31, 2017 ... Si@SiO2 core–shell nanoparticles were proposed for the development of fluorescent mercury ... orophores, due to their unique optical properties, such as .... were made by evaporating one drop of the sample solution on.

  17. Fabrication of miniaturised Si-based electrocatalytic membranes

    International Nuclear Information System (INIS)

    D'Arrigo, G.; Spinella, C.; Arena, G.; Lorenti, S.

    2003-01-01

    The increasing interest for light and movable electronic systems, cell phones and small digital devices, drives the technological research toward integrated regenerating power sources with small dimensions and great autonomy. Conventional batteries are already unable to deliver power in more and more shrunk volumes maintaining the requirements of long duration and light weight. A possible solution to overcome these limits is the use of miniaturised fuel cell. The fuel cell offers a greater gravimetric energy density compared to conventional batteries. The micromachining technology of silicon is an important tool to reduce the fuel cell structure to micrometer sizes. The use of silicon also gives the opportunity to integrate the power source and the electronic circuits controlling the fuel cell on the same structure. This paper reports preliminary results concerning the micromachining procedure for fabricating a Si-based electrocatalytic membrane for miniaturised Si-based proton exchange membrane fuel cells (PEMFC)

  18. Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

    Directory of Open Access Journals (Sweden)

    Elnaggar A.M.

    2016-12-01

    Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

  19. Filter optimization of Si and SiC semiconductor-based H5 and Conergy-NPC transformerless PV inverters

    DEFF Research Database (Denmark)

    Saridakis, Stefanos; Koutroulis, Eftichios; Blaabjerg, Frede

    2013-01-01

    Single-phase transformerless Photovoltaic (PV) inverters are synthesized by combining available solutions in terms of the power section topology, power semiconductors manufacturing technology and structure of the output filter. A design method is presented in this paper for optimizing the power......C-based PV inverters will inject more energy into the electric grid, compared to the Si-based structures and enable the reduction of the output filter size, weight and cost. Employing an LLCL-type output filter and simultaneously reducing the cost of SiC power semiconductors to the level of their Si...

  20. Comparison between Si/SiO_2 and InP/Al_2O_3 based MOSFETs

    International Nuclear Information System (INIS)

    Akbari Tochaei, A.; Arabshahi, H.; Benam, M. R.; Vatan-Khahan, A.; Abedininia, M.

    2016-01-01

    Electron transport properties of InP-based MOSFET as a new channel material with Al_2O_3 as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I_d–V_d characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I_d of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

  1. siMacro: A Fast and Easy Data Processing Tool for Cell-Based Genomewide siRNA Screens

    Directory of Open Access Journals (Sweden)

    Nitin Kumar Singh

    2013-03-01

    Full Text Available Growing numbers of studies employ cell line-based systematic short interfering RNA (siRNA screens to study gene functions and to identify drug targets. As multiple sources of variations that are unique to siRNA screens exist, there is a growing demand for a computational tool that generates normalized values and standardized scores. However, only a few tools have been available so far with limited usability. Here, we present siMacro, a fast and easy-to-use Microsoft Office Excel-based tool with a graphic user interface, designed to process single-condition or two-condition synthetic screen datasets. siMacro normalizes position and batch effects, censors outlier samples, and calculates Z-scores and robust Z-scores, with a spreadsheet output of >120,000 samples in under 1 minute.

  2. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  3. SiC epitaxy growth using chloride-based CVD

    International Nuclear Information System (INIS)

    Henry, Anne; Leone, Stefano; Beyer, Franziska C.; Pedersen, Henrik; Kordina, Olof; Andersson, Sven; Janzén, Erik

    2012-01-01

    The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

  4. Elimination of Iron Based Particles in Al-Si Alloy

    Directory of Open Access Journals (Sweden)

    Bolibruchová D.

    2015-03-01

    Full Text Available This paper deals with influence on segregation of iron based phases on the secondary alloy AlSi7Mg0.3 microstructure by chrome. Iron is the most common and harmful impurity in aluminum casting alloys and has long been associated with an increase of casting defects. In generally, iron is associated with the formation of Fe-rich phases. It is impossible to remove iron from melt by standard operations, but it is possible to eliminate its negative influence by addition some other elements that affect the segregation of intermetallics in less harmful type. Realization of experiments and results of analysis show new view on solubility of iron based phases during melt preparation with higher iron content and influence of chrome as iron corrector of iron based phases. By experimental work were used three different amounts of AlCr20 master alloy a three different temperature of chill mold. Our experimental work confirmed that chrome can be used as an iron corrector in Al-Si alloy, due to the change of intermetallic phases and shortening their length.

  5. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    KAUST Repository

    Stavarache, Ionel

    2017-07-21

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO2 thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  6. Correlation between structure and optical properties of Si-based alloys deposited by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, M.M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)]. E-mail: michelaria@hotmail.com; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Sacchetti, A. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)

    2006-07-26

    Si-based thin films, including {mu}c-Si, Si{sub 1-x}Ge {sub x} and Si{sub 1-x}C {sub x} alloys, have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiF{sub 4}:H{sub 2}:He, SiF{sub 4}:GeH{sub 4}:H{sub 2} and SiF{sub 4}:CH{sub 4}:H{sub 2} plasmas, respectively. When SiF{sub 4} is used as Si-precursor, it is found that a low flux of CH{sub 4} or GeH{sub 4} results in incorporation of C and Ge in alloys as high as 30%. Correlations between microstructure and optical properties of films are investigated using spectroscopic ellipsometry. The role of fluorine atoms in the growth chemistry and material microstructure is discussed.

  7. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    OpenAIRE

    Yudi Darma

    2008-01-01

    Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

  8. The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

    International Nuclear Information System (INIS)

    Marsi, N; Majlis, B Y; Hamzah, A A; Mohd, F

    2013-01-01

    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27°C, 500°C, 700°C and 1000°C. The results show that both materials display linear characteristics for temperature up to 500°C, although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700°C and 1000°C, the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.

  9. Modeling of Disordered Binary Alloys Under Thermal Forcing: Effect of Nanocrystallite Dissociation on Thermal Expansion of AuCu3

    Science.gov (United States)

    Kim, Y. W.; Cress, R. P.

    2016-11-01

    Disordered binary alloys are modeled as a randomly close-packed assembly of nanocrystallites intermixed with randomly positioned atoms, i.e., glassy-state matter. The nanocrystallite size distribution is measured in a simulated macroscopic medium in two dimensions. We have also defined, and measured, the degree of crystallinity as the probability of a particle being a member of nanocrystallites. Both the distribution function and the degree of crystallinity are found to be determined by alloy composition. When heated, the nanocrystallites become smaller in size due to increasing thermal fluctuation. We have modeled this phenomenon as a case of thermal dissociation by means of the law of mass action. The crystallite size distribution function is computed for AuCu3 as a function of temperature by solving some 12 000 coupled algebraic equations for the alloy. The results show that linear thermal expansion of the specimen has contributions from the temperature dependence of the degree of crystallinity, in addition to respective thermal expansions of the nanocrystallites and glassy-state matter.

  10. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

    NARCIS (Netherlands)

    Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

    2016-01-01

    Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

  11. Biomimetic synthesis of cellular SiC based ceramics from plant ...

    Indian Academy of Sciences (India)

    Unknown

    SiC based materials so derived can be used in structural applications and in designing high temperature filters and catalyst supports. Keywords. Biomimetic synthesis; carbonaceous biopreform; biomorphic Si–SiC ceramic composites; porous cellular SiC ceramics. 1. Introduction. In recent years, there has been tremendous ...

  12. Optimization of SiC-based H5 and Conergy-NPC transformerless PV inverters

    DEFF Research Database (Denmark)

    Saridakis, Stefanos; Koutroulis, Eftichios; Blaabjerg, Frede

    2013-01-01

    effective in terms of energy production than their non-optimized and Si-based counterparts. Reducing the market price of SiC-type power semiconductors enables to design optimized PV inverters with a lower cost of energy than that of PV inverters employing Si technology, thus maximizing the economic...... profitability of the PV system....

  13. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  14. Hydrogen vacancies facilitate hydrogen transport kinetics in sodium hydride nanocrystallites

    NARCIS (Netherlands)

    Singh, S.; Eijt, S.W.H.

    2008-01-01

    We report ab initio calculations based on density-functional theory, of the vacancy-mediated hydrogen migration energy in bulk NaH and near the NaH(001) surface. The estimated rate of the vacancy mediated hydrogen transport, obtained within a hopping diffusion model, is consistent with the reaction

  15. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  16. Stealth Biocompatible Si-Based Nanoparticles for Biomedical Applications

    Science.gov (United States)

    Chaix, Arnaud; Gary-Bobo, Magali; Angeletti, Bernard; Masion, Armand; Da Silva, Afitz; Daurat, Morgane; Lichon, Laure; Garcia, Marcel; Morère, Alain; El Cheikh, Khaled; Durand, Jean-Olivier; Cunin, Frédérique; Auffan, Mélanie

    2017-01-01

    A challenge regarding the design of nanocarriers for drug delivery is to prevent their recognition by the immune system. To improve the blood residence time and prevent their capture by organs, nanoparticles can be designed with stealth properties using polymeric coating. In this study, we focused on the influence of surface modification with polyethylene glycol and/or mannose on the stealth behavior of porous silicon nanoparticles (pSiNP, ~200 nm). In vivo biodistribution of pSiNPs formulations were evaluated in mice 5 h after intravenous injection. Results indicated that the distribution in the organs was surface functionalization-dependent. Pristine pSiNPs and PEGylated pSiNPs were distributed mainly in the liver and spleen, while mannose-functionalized pSiNPs escaped capture by the spleen, and had higher blood retention. The most efficient stealth behavior was observed with PEGylated pSiNPs anchored with mannose that were the most excreted in urine at 5 h. The biodegradation kinetics evaluated in vitro were in agreement with these in vivo observations. The biocompatibility of the pristine and functionalized pSiNPs was confirmed in vitro on human cell lines and in vivo by cytotoxic and systemic inflammation investigations, respectively. With their biocompatibility, biodegradability, and stealth properties, the pSiNPs functionalized with mannose and PEG show promising potential for biomedical applications. PMID:28946628

  17. Tribological characteristics of Si3N4-based composites in unlubricated sliding against steel ball

    International Nuclear Information System (INIS)

    Liu, C.-C.; Huang, J.-L.

    2004-01-01

    The dry-sliding wear mechanism of Si 3 N 4 -based composites against AISI-52100 steel ball was studied using a ball-on-disc mode in a reciprocation motion. The addition of TiN particles can increase the fracture toughness of Si 3 N 4 -based composites. The fracture toughness of Si 3 N 4 -based composites played an important role for wear behavior. The Si 3 N 4 -based composites exhibits a small friction and wear coefficient compared to monolithic Si 3 N 4 . Atomic force microscopy (AFM) studies displayed fine wear grooves along the sliding traces. The subsurface deformation shows that the microcrack propagation extends along the TiN/Si 3 N 4 grain interface. The wear mechanisms were determined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and atomic force microscopy

  18. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  19. Synthesis and characterization of magnesium oxide nanocrystallites and probing the vacancy-type defects through positron annihilation studies

    Science.gov (United States)

    Das, Anjan; Mandal, Atis Chandra; Roy, Soma; Prashanth, Pendem; Ahamed, Sk Izaz; Kar, Subhrasmita; Prasad, Mithun S.; Nambissan, P. M. G.

    2016-09-01

    Magnesium oxide nanocrystallites exhibit certain abnormal characteristics when compared to those of other wide band gap oxide semiconductors in the sense they are most prone to water absorption and formation of a hydroxide layer on the surface. The problem can be rectified by heating and pure nanocrystallites can be synthesized with controllable sizes. Inevitably the defect properties are distinctly divided between two stages, the one with the hydroxide layer (region I) and the other after the removal of the layer by annealing (region II). The lattice parameters, the optical band gap and even the positron annihilation characteristics are conspicuous by their distinct behavior in the two stages of the surface configurations of nanoparticles. While region I was specific with the formation of positronium-hydrogen complexes that drastically altered the defect-specific positron lifetimes, pick-off annihilation of orthopositronium atoms marked region II. The vacancy clusters within the nanocrystallites also trapped positrons. They agglomerated due to the effect of the higher temperatures and resulted in the growth of the nanocrystallites. The coincidence Doppler broadening spectroscopic measurements supported these findings and all the more indicated the trapping of positrons additionally into the neutral divacancies and negatively charged trivacancies. This is apart from the Mg2+ monovacancies which acted as the dominant trapping centers for positrons.

  20. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  1. InP-based photonic integrated circuit platform on SiC wafer.

    Science.gov (United States)

    Takenaka, Mitsuru; Takagi, Shinichi

    2017-11-27

    We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

  2. Synthesis and crystal kinetics of cerium oxide nanocrystallites prepared by co-precipitation process

    International Nuclear Information System (INIS)

    Shih, C.J.; Chen, Y.J.; Hon, M.H.

    2010-01-01

    Cerium oxide nanocrystallites were synthesized at a relatively low temperature using cerium nitrate as starting materials in a water solution by a co-precipitation process. Effect of calcination temperature on the crystallite growth of cerium oxide nano-powders was investigated by X-ray diffraction, transmission electron microscopy and electron diffraction. The crystallization temperature of the cerium oxide powders was estimated to be about 273 K by XRD analysis. When calcined from 473 to 1273 K, the crystallization of the face-centered cubic phase was observed by XRD. The crystallite size of the cerium oxide increased from 10.0 to 43.8 nm with calcining temperature increasing from 673 to 1273 K. The activation energy for growth of cerium oxide nanoparticles was found to be 16.0 kJ mol -1 .

  3. Synthesis and crystal kinetics of cerium oxide nanocrystallites prepared by co-precipitation process

    Energy Technology Data Exchange (ETDEWEB)

    Shih, C.J., E-mail: cjshih@kmu.edu.tw [Department of Fragrance and Cosmetics Science, Kaohsiung Medical University, 100 Shi-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Chen, Y.J. [Institute of Biomedical Sciences, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hon, M.H. [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2010-05-15

    Cerium oxide nanocrystallites were synthesized at a relatively low temperature using cerium nitrate as starting materials in a water solution by a co-precipitation process. Effect of calcination temperature on the crystallite growth of cerium oxide nano-powders was investigated by X-ray diffraction, transmission electron microscopy and electron diffraction. The crystallization temperature of the cerium oxide powders was estimated to be about 273 K by XRD analysis. When calcined from 473 to 1273 K, the crystallization of the face-centered cubic phase was observed by XRD. The crystallite size of the cerium oxide increased from 10.0 to 43.8 nm with calcining temperature increasing from 673 to 1273 K. The activation energy for growth of cerium oxide nanoparticles was found to be 16.0 kJ mol{sup -1}.

  4. Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells

    Science.gov (United States)

    Kaci, S.; Rahmoune, R.; Kezzoula, F.; Boudiaf, Y.; Keffous, A.; Manseri, A.; Menari, H.; Cheraga, H.; Guerbous, L.; Belkacem, Y.; Chalal, R.; Bozetine, I.; Boukezzata, A.; Talbi, L.; Benfadel, K.; Ouadfel, M.-A.; Ouadah, Y.

    2018-06-01

    Nowadays, the advanced photon management is regarded as an area of intensive research investment. Ever since the most widely used commercial photovoltaic cells are fabricated with single gap semiconductors like silicon, photon management has offered opportunities to make better use of the photons, both inside and outside the single junction window. In this study, the impact of new down shifting layer on the photoelectrical parameters of silicon based solar cell was studied. An effort to enhance the photovoltaic performance of textured silicon solar cells through the application of porous SiC particles-doped polyvinyl alcohol (PVA) layers using the spin-coating technique, is reported. Current-voltage curves under artificial illumination were used to confirm the contribution of LDS (SiC-PVA) thin layers. Experiment results revealed that LDS based on SiC particles which were etched in HF/K2S2O8 solution at T = 80 °C under UV light of 254 nm exhibited the best solar cell photoelectrical parameters due to its strong photoluminescence.

  5. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  6. Preclinical and clinical development of siRNA-based therapeutics.

    Science.gov (United States)

    Ozcan, Gulnihal; Ozpolat, Bulent; Coleman, Robert L; Sood, Anil K; Lopez-Berestein, Gabriel

    2015-06-29

    The discovery of RNA interference, first in plants and Caenorhabditis elegans and later in mammalian cells, led to the emergence of a transformative view in biomedical research. Knowledge of the multiple actions of non-coding RNAs has truly allowed viewing DNA, RNA and proteins in novel ways. Small interfering RNAs (siRNAs) can be used as tools to study single gene function both in vitro and in vivo and are an attractive new class of therapeutics, especially against undruggable targets for the treatment of cancer and other diseases. Despite the potential of siRNAs in cancer therapy, many challenges remain, including rapid degradation, poor cellular uptake and off-target effects. Rational design strategies, selection algorithms, chemical modifications and nanocarriers offer significant opportunities to overcome these challenges. Here, we review the development of siRNAs as therapeutic agents from early design to clinical trial, with special emphasis on the development of EphA2-targeting siRNAs for ovarian cancer treatment. Copyright © 2015 Elsevier B.V. All rights reserved.

  7. Emanation thermal analysis of SiC based materials

    Czech Academy of Sciences Publication Activity Database

    Bálek, V.; Zeleňák, V.; Mitsuhashi, T.; Bakardjieva, Snejana; Šubrt, Jan; Haneda, H.

    2002-01-01

    Roč. 67, č. 1 (2002), s. 83-89 ISSN 1418-2874 R&D Projects: GA MŠk ME 180 Grant - others:EFDA(XE) TTMA-001 Institutional research plan: CEZ:AV0Z4032918 Keywords : emanation thermal analysis * SEM * SiC nanocomposites Subject RIV: CA - Inorganic Chemistry Impact factor: 0.598, year: 2002

  8. CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Meng [Arizona State Univ., Mesa, AZ (United States)

    2015-03-01

    The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells. These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6

  9. Mechanically Activated Combustion Synthesis of MoSi2-Based Composites

    Energy Technology Data Exchange (ETDEWEB)

    Shafirovich, Evgeny [Univ. of Texas, El Paso, TX (United States)

    2015-09-30

    The thermal efficiency of gas-turbine power plants could be dramatically increased by the development of new structural materials based on molybdenum silicides and borosilicides, which can operate at temperatures higher than 1300 °C with no need for cooling. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. One approach is based on the fabrication of MoSi2-Mo5Si3 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of Mo5Si3. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, materials based on Mo5SiB2 phase are promising materials that offer favorable combinations of high temperature mechanical properties and oxidation resistance. However, the synthesis of Mo-Si-B multi-phase alloys is difficult because of their extremely high melting temperatures. Mechanical alloying has been considered as a promising method, but it requires long milling times, leading to large energy consumption and contamination of the product by grinding media. In the reported work, MoSi2-Mo5Si3 composites and several materials based on Mo5SiB2 phase have been obtained by mechanically activated self-propagating high-temperature synthesis (MASHS). Short-term milling of Mo/Si mixture in a planetary mill has enabled a self-sustained propagation of the combustion front over the mixture pellet, leading to the formation of MoSi2-T1 composites. Combustion of Mo/Si/B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of MoB, TiC, or TiB2. Upon ignition, Mo/Si/B and Mo/Si/B/Ti mixtures exhibited spin combustion, but the products were porous, contained undesired secondary phases, and had low oxidation resistance. It has been shown that use of

  10. Preliminary study in development of glass-ceramic based on SiO2-LiO2 system, starting of different SiO2 starting powders

    International Nuclear Information System (INIS)

    Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.

    2009-01-01

    In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)

  11. Anchoring alpha-manganese oxide nanocrystallites on multi-walled carbon nanotubes as electrode materials for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Li Li; Qin Zongyi, E-mail: phqin@dhu.edu.cn; Wang Lingfeng; Liu Hongjin; Zhu Meifang [Donghua University, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering (China)

    2010-09-15

    The partial coverage of manganese oxide (MnO{sub 2}) particles was achieved on the surfaces of multi-walled carbon nanotubes (MWCNTs) through a facile hydrothermal process. These particles were demonstrated to be alpha-manganese dioxide ({alpha}-MnO{sub 2}) nanocrystallites, and exhibited the appearance of the whisker-shaped crystals with the length of 80-100 nm. In such a configuration, the uncovered CNTs in the nanocomposite acted as a good conductive pathway and the whisker-shaped MnO{sub 2} nanocrystallites efficiently increased the contact of the electrolyte with the active materials. Thus, the highest specific capacitance of 550 F g{sup -1} was achieved using the resulting nanocomposites as the supercapacitor electrode. In addition, the enhancement of the capacity retention was observed, with the nanocomposite losing only 10% of the maximum capacity after 1,500 cycles.

  12. Anchoring alpha-manganese oxide nanocrystallites on multi-walled carbon nanotubes as electrode materials for supercapacitor

    Science.gov (United States)

    Li, Li; Qin, Zong-Yi; Wang, Ling-Feng; Liu, Hong-Jin; Zhu, Mei-Fang

    2010-09-01

    The partial coverage of manganese oxide (MnO2) particles was achieved on the surfaces of multi-walled carbon nanotubes (MWCNTs) through a facile hydrothermal process. These particles were demonstrated to be alpha-manganese dioxide (α-MnO2) nanocrystallites, and exhibited the appearance of the whisker-shaped crystals with the length of 80-100 nm. In such a configuration, the uncovered CNTs in the nanocomposite acted as a good conductive pathway and the whisker-shaped MnO2 nanocrystallites efficiently increased the contact of the electrolyte with the active materials. Thus, the highest specific capacitance of 550 F g-1 was achieved using the resulting nanocomposites as the supercapacitor electrode. In addition, the enhancement of the capacity retention was observed, with the nanocomposite losing only 10% of the maximum capacity after 1,500 cycles.

  13. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  14. A methodology of SiP testing based on boundary scan

    Science.gov (United States)

    Qin, He; Quan, Haiyang; Han, Yifei; Zhu, Tianrui; Zheng, Tuo

    2017-10-01

    System in Package (SiP) play an important role in portable, aerospace and military electronic with the microminiaturization, light weight, high density, and high reliability. At present, SiP system test has encountered the problem on system complexity and malfunction location with the system scale exponentially increase. For SiP system, this paper proposed a testing methodology and testing process based on the boundary scan technology. Combining the character of SiP system and referencing the boundary scan theory of PCB circuit and embedded core test, the specific testing methodology and process has been proposed. The hardware requirement of the under test SiP system has been provided, and the hardware platform of the testing has been constructed. The testing methodology has the character of high test efficiency and accurate malfunction location.

  15. Development of Universal Controller Architecture for SiC Based Power Electronic Building Blocks

    Science.gov (United States)

    2017-10-30

    SiC Based Power Electronic Building Blocks Award Number Title of Research 30 October 2017 SUBMITTED BY D R. HERBERT L. G INN, Pl DEPT. OF...Naval Research , Philadelphia PA, Aug. 2017. • Ginn, H.L. Bakos J., "Development of Universal Controller Architecture for SiC Based Power Electronic...Controller Implementation for MMC Converters", Workshop on Control Architectures for Modular Power Conversion Systems, Office of Naval Research , Arlington VA

  16. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

    Directory of Open Access Journals (Sweden)

    Muhammad Nawaz

    2015-01-01

    Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

  17. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    output. The double pulse test shows the devices' current during commutation process and the reduced switching losses of SiC MOSFETs compared to that of the traditional half bridge. The efficiency comparison is presented with experimental results of half bridge power inverter with split output...... and traditional half bridge inverter, from switching frequency 10 kHz to 100 kHz. The experimental results comparison shows that the half bridge with split output has an efficiency improvement of more than 0.5% at 100 kHz switching frequency....

  18. Si- and Sn-containing SiOCN-based nanocomposites as anode materials for lithium ion batteries. Synthesis, thermodynamic characterization and modeling

    Energy Technology Data Exchange (ETDEWEB)

    Rohrer, Jochen; Albe, Karsten [Technische Univ. Darmstadt (Germany). Materialmodellierung; Vrankovic, Dragoljub; Riedel, Ralf; Graczyk-Zajac, Magdalena [Technische Univ. Darmstadt (Germany). Disperse Feststoffe; Cupid, Damian; Seifert, Hans J. [Karlsruher Institut fuer Technologie, Eggenstein-Leopoldshafen (Germany). IAM - Angewandte Werkstoffphysik

    2017-11-15

    Novel nanocomposites consisting of silicon/tin nanoparticles (n-Si/n-Sn) embedded in silicon carbonitride (SiCN) or silicon oxycarbide (SiOC) ceramic matrices are investigated as possible anode materials for Li-ion batteries. The goal of our study is to exploit the large mass specific capacity of Si/Sn (3 579 mAh g{sup -1}/994 mAh g{sup -1}), while avoiding rapid capacity fading due to the large volume changes of Si/Sn during Li insertion. We show that a large amount (∝30-40 wt.%) of disordered carbon phase is dispersed within the SiOC/SiCN matrix and stabilizes the Si/Sn nanoparticles with respect to extended reversible lithium ion storage. Silicon nanocomposites are prepared by mixing of a polymeric precursor with commercial and ''home-synthesized'' crystalline and amorphous silicon. Tin nanocomposites, in contrast, are prepared using a single precursor approach, which allows the in-situ generation of Sn nanoparticles homogeneously dispersed within the SiOC host. The best electrochemical stability along with capacities of 600 - 700 mAh g{sup -1} is obtained when amorphous/porous silicon is used. Mechanisms contributing to the increase of storage capacity and the cycle stability are clarified by analyzing elemental composition, local solid-state structures, intercalation hosts and Li-ion mobility. Our work is supplemented by first-principles based atomistic modeling and thermochemical measurements.

  19. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    Science.gov (United States)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

    2015-12-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

  20. Effects of La and Ce Addition on the Modification of Al-Si Based Alloys

    Directory of Open Access Journals (Sweden)

    Emad M. Elgallad

    2016-01-01

    Full Text Available This study focuses on the effects of the addition of rare earth metals (mainly lanthanum and cerium on the eutectic Si characteristics in Al-Si based alloys. Based on the solidification curves and microstructural examination of the corresponding alloys, it was found that addition of La or Ce increases the alloy melting temperature and the Al-Si eutectic temperature, with an Al-Si recalescence of 2-3°C, and the appearance of post-α-Al peaks attributed to precipitation of rare earth intermetallics. Addition of La or Ce to Al-(7–13% Si causes only partial modification of the eutectic Si particles. Lanthanum has a high affinity to react with Sr, which weakens the modification efficiency of the latter. Cerium, however, has a high affinity for Ti, forming a large amount of sludge. Due to the large difference in the length of the eutectic Si particles in the same sample, the normal use of standard deviation in this case is meaningless.

  1. Lipid-Based Liquid Crystalline Nanoparticles Facilitate Cytosolic Delivery of siRNA via Structural Transformation.

    Science.gov (United States)

    He, Shufang; Fan, Weiwei; Wu, Na; Zhu, Jingjing; Miao, Yunqiu; Miao, Xiaran; Li, Feifei; Zhang, Xinxin; Gan, Yong

    2018-04-11

    RNA interference (RNAi) technology has shown great promise for the treatment of cancer and other genetic disorders. Despite the efforts to increase the target tissue distribution, the safe and effective delivery of siRNA to the diseased cells with sufficient cytosolic transport is another critical factor for successful RNAi clinical application. Here, the constructed lipid-based liquid crystalline nanoparticles, called nano-Transformers, can transform thestructure in the intracellular acidic environment and perform high-efficient siRNA delivery for cancer treatment. The developed nano-Transformers have satisfactory siRNA loading efficiency and low cytotoxicity. Different from the traditional cationic nanocarriers, the endosomal membrane fusion induced by the conformational transition of lipids contributes to the easy dissociation of siRNA from nanocarriers and direct release of free siRNA into cytoplasm. We show that transfection with cyclin-dependent kinase 1 (CDK1)-siRNA-loaded nano-Transformers causes up to 95% reduction of relevant mRNA in vitro and greatly inhibits the tumor growth without causing any immunogenic response in vivo. This work highlights that the lipid-based nano-Transformers may become the next generation of siRNA delivery system with higher efficacy and improved safety profiles.

  2. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    International Nuclear Information System (INIS)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Dae Kim, Seong; Ahn, Jong-Hyun

    2015-01-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I on /I off ) of up to ∼10 3 , with a current density of 10 2 A cm −2 . We also observed significant dependence of Schottky barrier height Δφ b on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier. (paper)

  3. Mapping Optimal Charge Density and Length of ROMP-Based PTDMs for siRNA Internalization.

    Science.gov (United States)

    Caffrey, Leah M; deRonde, Brittany M; Minter, Lisa M; Tew, Gregory N

    2016-10-10

    A fundamental understanding of how polymer structure impacts internalization and delivery of biologically relevant cargoes, particularly small interfering ribonucleic acid (siRNA), is of critical importance to the successful design of improved delivery reagents. Herein we report the use of ring-opening metathesis polymerization (ROMP) methods to synthesize two series of guanidinium-rich protein transduction domain mimics (PTDMs): one based on an imide scaffold that contains one guanidinium moiety per repeat unit, and another based on a diester scaffold that contains two guanidinium moieties per repeat unit. By varying both the degree of polymerization and, in effect, the relative number of cationic charges in each PTDM, the performances of the two ROMP backbones for siRNA internalization were evaluated and compared. Internalization of fluorescently labeled siRNA into Jurkat T cells demonstrated that fluorescein isothiocyanate (FITC)-siRNA internalization had a charge content dependence, with PTDMs containing approximately 40 to 60 cationic charges facilitating the most internalization. Despite this charge content dependence, the imide scaffold yielded much lower viabilities in Jurkat T cells than the corresponding diester PTDMs with similar numbers of cationic charges, suggesting that the diester scaffold is preferred for siRNA internalization and delivery applications. These developments will not only improve our understanding of the structural factors necessary for optimal siRNA internalization, but will also guide the future development of optimized PTDMs for siRNA internalization and delivery.

  4. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  5. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  6. Screen-Printed Photochromic Textiles through New Inks Based on SiO2@naphthopyran Nanoparticles.

    Science.gov (United States)

    Pinto, Tânia V; Costa, Paula; Sousa, Céu M; Sousa, Carlos A D; Pereira, Clara; Silva, Carla J S M; Pereira, Manuel Fernando R; Coelho, Paulo J; Freire, Cristina

    2016-10-26

    Photochromic silica nanoparticles (SiO 2 @NPT), fabricated through the covalent immobilization of silylated naphthopyrans (NPTs) based on 2H-naphtho[1,2-b]pyran (S1, S2) and 3H-naphtho[2,1-b]pyran (S3, S4) or through the direct adsorption of the parent naphthopyrans (1, 3) onto silica nanoparticles (SiO 2 NPs), were successfully incorporated onto cotton fabrics by a screen-printing process. Two aqueous acrylic- (AC-) and polyurethane- (PU-) based inks were used as dispersing media. All textiles exhibited reversible photochromism under UV and solar irradiation, developing fast responses and intense coloration. The fabrics coated with SiO 2 @S1 and SiO 2 @S2 showed rapid color changes and high contrasts (ΔE* ab = 39-52), despite presenting slower bleaching kinetics (2-3 h to fade to the original color), whereas the textiles coated with SiO 2 @S3 and SiO 2 @S4 exhibited excellent engagement between coloration and decoloration rates (coloration and fading times of 1 and 2 min, respectively; ΔE* ab = 27-53). The PU-based fabrics showed excellent results during the washing fastness tests, whereas the AC-based textiles evidenced good results only when a protective transfer film was applied over the printed design.

  7. Smart Inulin-Based Polycationic Nanodevices for siRNA Delivery.

    Science.gov (United States)

    Cavallaro, G; Sardo, C; Scialabba, C; Licciardi, M; Giammona, G

    2017-01-01

    The advances of short interfering RNA (siRNA) mediated therapy provide a powerful option for the treatment of many diseases by silencing the expression of targeted genes including cancer development and progression. Inulin is a very simple and biocompatible polysaccharide proposed by our groups to produce interesting delivery systems for Nucleic Acid Based Drugs (NABDs), such as siRNA, either as polycations able to give polyplexes and polymeric coatings for nanosystems having a metallic core. In this research field, different functionalizing groups were linked to the inulin backbone with specific aims including oligoamine such as Ethylendiammine (EDA), Diethylediamine (DETA), Spermine, (SPM) etc. In this contribution the main Inulin-based nanodevices for the delivery of siRNA have been reported, analysed and compared with particular reference to their chemical design and structure, biocompatibility, siRNA complexing ability, silencing ability. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  8. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  9. Experimental determination of nanofluid specific heat with SiO2 nanoparticles in different base fluids

    Science.gov (United States)

    Akilu, S.; Baheta, A. T.; Sharma, K. V.; Said, M. A.

    2017-09-01

    Nanostructured ceramic materials have recently attracted attention as promising heat transfer fluid additives owing to their outstanding heat storage capacities. In this paper, experimental measurements of the specific heats of SiO2-Glycerol, SiO2-Ethylene Glycol, and SiO2-Glycerol/Ethylene Glycol mixture 60:40 ratio (by mass) nanofluids with different volume concentrations of 1.0-4.0% have been carried out using differential scanning calorimeter at temperatures of 25 °C and 50 °C. Experimental results indicate lower specific heat capacities are found with SiO2 nanofluids compared to their respective base fluids. The specific heat was decreasing with the increase of concentration, and this decrement depends on upon the type of the base fluid. It is observed that temperature has a positive impact on the specific heat capacity. Furthermore, the experimental values were compared with the theoretical model predictions, and a satisfactory agreement was established.

  10. Structural and multiferroic properties of barium substituted bismuth ferrite nanocrystallites prepared by sol–gel method

    International Nuclear Information System (INIS)

    Anju; Agarwal, Ashish; Aghamkar, Praveen; Lal, Bhajan

    2017-01-01

    Nanocrystalline Bi 1-x Ba x FeO 3 (0≤x≤0.3) multiferroics were efficiently obtained by sol–gel method after sintering at 800 °C for one hour. The Ba substitution in BiFeO 3 (BFO) strongly modifies its structural and multiferroic properties. XRD studies revealed the structural transition from distorted rhombohedral (R3c) to pseudo-cubic (Pm3m) crystal symmetry. The magnetization increases appreciably for x=0.1, which is due to spin canting of magnetic moments at the nanoparticle surfaces and decreases afterward. From the temperature dependent magnetization studies, it is found that magnetic transition temperature (T N ) is 620 K for x=0 and 640 K for x=0.1. Besides, the maximum polarisation value decreases with increasing Ba content. SEM micrographs revealed the formation of cubic nanocrystallites with increased porosity on Ba substitution. FTIR analysis of the samples also supports the structural change towards increased crystal symmetry. - Highlights: • XRD studies revealed the structural transition from distorted rhombohedral (R3c) to pseudo-cubic (Pm3m) crystal symmetry. • The magnetization increases appreciably for x=0.1 and decreases afterward for higher Ba content. • Magnetic transition temperature (T N ) is found to be 620 K for x=0 and 640 K for x=0.1. • Maximum polarisation value is highest for x=0.1.

  11. Property changes of urinary nanocrystallites and urine of uric acid stone formers after taking potassium citrate

    International Nuclear Information System (INIS)

    Zhang, Guang-Na; Ouyang, Jian-Ming; Xue, Jun-Fa; Shang, Yun-Feng

    2013-01-01

    The property changes of urinary nanocrystallites in 20 cases of uric acid (UA) stone formers after 1 week of potassium citrate (K 3 cit) intake were comparatively studied by X-ray diffraction analysis, Fourier transform infrared spectroscopy, nanoparticle size analysis, and transmission electron microscopy. Before K 3 cit intake, the urinary crystallites mainly contained UA and calcium oxalate. After K 3 cit intake, the components changed to urate and UA; the qualities, species, and amounts of aggregated crystallites decreased; urine pH, citrate, and glycosaminoglycan excretions increased; and UA excretion, Zeta potential, and crystallite size decreased. The stability of crystallites followed the order: controls > patients after taking K 3 cit > patients before taking K 3 cit. Therefore, the components of urinary stones were closely related to the components of urinary crystallites. - Graphical abstract: The relationships among stone components, urinary crystallite components, and urine pH were established. The crystallites stability order was: controls > patients after taking K 3 cit > patients before taking K 3 cit. Highlights: • Urine crystallite property of uric acid stone former after K 3 cit intake was studied. • The components of crystallites in urine are closely related to type of stones. • After K 3 cit intake the qualities and species of crystallites decreased. • After K 3 cit intake the amount of aggregated crystallites decreased. • The stability of urinary crystallites of UA patients increased after taking K 3 cit

  12. Structural and multiferroic properties of barium substituted bismuth ferrite nanocrystallites prepared by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Anju [Materials Science Lab, Department of Physics, Chaudhary Devi Lal University, Sirsa 125055 (India); Agarwal, Ashish [Department of Applied Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001 (India); Aghamkar, Praveen, E-mail: praveenaghamkar@gmail.com [Materials Science Lab, Department of Physics, Chaudhary Devi Lal University, Sirsa 125055 (India); Lal, Bhajan [Department of Applied Sciences, Goverment Polytechnic for Women, Sirsa 125055 (India)

    2017-03-15

    Nanocrystalline Bi{sub 1-x}Ba{sub x}FeO{sub 3} (0≤x≤0.3) multiferroics were efficiently obtained by sol–gel method after sintering at 800 °C for one hour. The Ba substitution in BiFeO{sub 3} (BFO) strongly modifies its structural and multiferroic properties. XRD studies revealed the structural transition from distorted rhombohedral (R3c) to pseudo-cubic (Pm3m) crystal symmetry. The magnetization increases appreciably for x=0.1, which is due to spin canting of magnetic moments at the nanoparticle surfaces and decreases afterward. From the temperature dependent magnetization studies, it is found that magnetic transition temperature (T{sub N}) is 620 K for x=0 and 640 K for x=0.1. Besides, the maximum polarisation value decreases with increasing Ba content. SEM micrographs revealed the formation of cubic nanocrystallites with increased porosity on Ba substitution. FTIR analysis of the samples also supports the structural change towards increased crystal symmetry. - Highlights: • XRD studies revealed the structural transition from distorted rhombohedral (R3c) to pseudo-cubic (Pm3m) crystal symmetry. • The magnetization increases appreciably for x=0.1 and decreases afterward for higher Ba content. • Magnetic transition temperature (T{sub N}) is found to be 620 K for x=0 and 640 K for x=0.1. • Maximum polarisation value is highest for x=0.1.

  13. Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

    Science.gov (United States)

    Lee, Kang N.

    2000-01-01

    Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

  14. Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

    Directory of Open Access Journals (Sweden)

    Jhansirani KOTCHARLAKOTA

    2016-05-01

    Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

  15. Organic/inorganic composite membranes based on polybenzimidazole and nano-SiO2

    International Nuclear Information System (INIS)

    Pu Hongting; Liu Lu; Chang Zhihong; Yuan Junjie

    2009-01-01

    Organic/inorganic composite membranes based on polybenzimidazole (PBI) and nano-SiO 2 were prepared in this work. However, the preparation of PBI/SiO 2 composite membrane is not easy since PBI is insoluble in water, while nano-SiO 2 is hydrophilic due to the hydrophilicity of nano-SiO 2 and water-insolubility of PBI. Thus, a solvent-exchange method was employed to prepare the composite membrane. The morphology of the composite membranes was studied by scanning electron microscopy (SEM). It was revealed that inorganic particles were dispersed homogenously in the PBI matrix. The thermal stability of the composite membrane is higher than that of pure PBI, both for doped and undoped membranes. PBI/SiO 2 composite membranes with up to 15 wt% SiO 2 exhibited improved mechanical properties compared with PBI membranes. The proton conductivity of the composite membranes containing phosphoric acid was studied. The nano-SiO 2 in the composite membranes enhanced the ability to trap phosphoric acid, which improved the proton conductivity of the composite membranes. The membrane with 15 wt% of inorganic material is oxidatively stable and has a proton conductivity of 3.9 x 10 -3 S/cm at 180 deg. C.

  16. Structure and wear behavior of AlCrSiN-based coatings

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yun [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Du, Hao [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Chen, Ming, E-mail: mchen@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yang, Jun [Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Xiong, Ji [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Zhao, Haibo [The Analysis and Testing Centre, Sichuan University, Chengdu 610065 (China)

    2016-05-01

    Graphical abstract: - Highlights: • AlCrSiN based coating showed amorphous structure. • AlCrSiN/Me{sub x}N coatings obtained better wear resistance. • Molybdenum and niobium increased the coating hardness and wear resistance. - Abstract: AlCrN, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings have been deposited on high-polished WC–Co cemented carbide substrate and tools by mid-frequency magnetron sputtering in Ar/N{sub 2} mixtures. Al{sub 0.6}Cr{sub 0.4}, Al{sub 0.6}Cr{sub 0.3}Si{sub 0.1}, and C/Mo/Nb targets were used during the deposition. The microstructure and mechanical properties of as-deposited coatings were investigated. Investigations of the wear behaviors of coated tools were also performed. The results showed that cubic structure was formed in the coatings. Broader CrAlN (1 1 1) and (2 0 0) peaks without SiN{sub x} peak were formed in the AlCrSiN/Me{sub x}N coatings, which showed a nanocomposited structure. Meanwhile, according to SEM micrographs, AlCrN exhibited a columnar structure, while, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings showed nanocrystalline morphology. The nano-multilayered coatings performed higher hardness, H/E, and H{sup 3}/E{sup 2} ratios compared with AlCrN coating. Through the Rockwell adhesion test, all the coatings exhibited adhesion strength quality HF1. After turning Inconel 718 under dry condition, the nano-multilyered coatings showed better wear resistance than AlCrN coating. Due to the molybdenum and niobium in the coating, AlCrSiN/MoN and AlCrSiN/NbN coatings showed the best wear resistance.

  17. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  18. Electric-field-controlled interface dipole modulation for Si-based memory devices.

    Science.gov (United States)

    Miyata, Noriyuki

    2018-05-31

    Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

  19. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  20. Stress analysis and probabilistic assessment of multi-layer SiC-based accident tolerant nuclear fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Stone, J.G., E-mail: Joshua.Stone@ga.com; Schleicher, R.; Deck, C.P.; Jacobsen, G.M.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) fiber, SiC matrix composites (SiC/SiC) are being considered as a cladding material for light water reactors in order to improve safety performance. Engineered, multi-layer cladding designs consisting of both monolithic SiC (mSiC) and SiC/SiC have been examined as promising concepts to meet both strength and impermeability requirements. A new model has been developed to calculate stresses and failure probabilities for multi-layer cladding consisting of SiC-based materials in reactor operating conditions. The results show that stresses in SiC-based cladding are dominated by temperature-dependent irradiation-induced swelling, with the largest stresses occurring during the cold shutdown conditions. Failure probabilities are driven by the resulting tensile stresses at the cladding inner wall, while the outer wall is subject to compressive stresses. This indicates that the inner SiC/SiC, outer mSiC concept has the lowest failure probability, as the pseudo-plastic deformation of the composite reduces tensile loading and the compressed monolith provides a reliable, impermeable barrier to fission product release.

  1. Antimony Influence on Shape of Eutectic Silicium in Al-Si Based Alloys

    Directory of Open Access Journals (Sweden)

    Bolibruchová D.

    2017-12-01

    Full Text Available Liquid AI-Si alloys are usually given special treatments before they are cast to obtain finer or modified matrix and eutectic structures, leading to improved properties. For many years, sodium additions to hypoeutectic and eutectic AI-Si melts have been recognized as the most effective method of modifying the eutectic morphology, although most of the group IA or IIA elements have significant effects on the eutectic structure. Unfortunately, many of these approaches also have associated several founding difficulties, such as fading, forming dross in presence of certain alloying elements, reduced fluidity, etc. ln recent years, antimony additions to AI-Si castings have attracted considerable attention as an alternative method of refining the eutectic structure. Such additions eliminate many of the difficulties listed above and provide permanent (i.e. non-fading refining ability. In this paper, the authors summarize work on antimony treatment of Al-Si based alloys.

  2. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  3. Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

    Science.gov (United States)

    Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

    2017-11-01

    A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.

  4. Computational studies of physical properties of Nb-Si based alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ouyang, Lizhi [Middle Tennessee State Univ., Murfreesboro, TN (United States)

    2015-04-16

    The overall goal is to provide physical properties data supplementing experiments for thermodynamic modeling and other simulations such as phase filed simulation for microstructure and continuum simulations for mechanical properties. These predictive computational modeling and simulations may yield insights that can be used to guide materials design, processing, and manufacture. Ultimately, they may lead to usable Nb-Si based alloy which could play an important role in current plight towards greener energy. The main objectives of the proposed projects are: (1) developing a first principles method based supercell approach for calculating thermodynamic and mechanic properties of ordered crystals and disordered lattices including solid solution; (2) application of the supercell approach to Nb-Si base alloy to compute physical properties data that can be used for thermodynamic modeling and other simulations to guide the optimal design of Nb-Si based alloy.

  5. Comparison between Si/SiO{sub 2} and InP/Al{sub 2}O{sub 3} based MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Akbari Tochaei, A., E-mail: amirakbari182@gmail.com; Arabshahi, H.; Benam, M. R. [Payame Noor University, Department of Physics (Iran, Islamic Republic of); Vatan-Khahan, A.; Abedininia, M. [Khayyam University, Department of Physics (Iran, Islamic Republic of)

    2016-11-15

    Electron transport properties of InP-based MOSFET as a new channel material with Al{sub 2}O{sub 3} as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I{sub d}–V{sub d} characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I{sub d} of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

  6. Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

    Directory of Open Access Journals (Sweden)

    Haizhong Wang

    2014-01-01

    Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

  7. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

    Science.gov (United States)

    Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guo-Ping; Hou, Xinmei; Chou, Kuo-Chih

    2018-06-04

    In this paper, the fabrication and thermal conductivity of water-based nanofluids using boron (B) doped SiC as dispersions are reported. Doping B into β-SiC phase leads to the shrinkage of SiC lattice due to the substitution of Si atoms (radius: 0.134 nm) by smaller B atoms (radius: 0.095 nm). The presence of B in SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B doped SiC nanoparticles are beneficial for the thermal conductivity improvement of the nanofluids by using them as dispersions. Serving B doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement of the stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. Dispersing B doped SiC nanoparticles in water based fluids, the thermal conductivity of the as prepared nanofluids containing only 0.3 vol. % SiC-B6 nanoparticles is remarkably raised up to 39.3 % at 30 °C compared to the base fluids and is further enhanced with the increased temperature. The main reasons for the improvement of thermal conductivity of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced thermal conductivity of the SiC-B dispersions. © 2018 IOP Publishing Ltd.

  8. Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)]. E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Sacchetti, Alberto [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2006-12-15

    Au nanoclusters have been deposited on Si(0 0 1) surfaces by sputtering of a metallic Au target using an Ar plasma. Different wet and dry treatments of the Si(0 0 1) surface, including dipping in HF solution and exposure to H{sub 2} and N{sub 2} plasmas, have been applied and the effects of these treatments on the Au nanoparticles/Si interface, the Au nanoclusters aspect ratio and the surface plasmon resonance (SPR) energy and amplitude are investigated exploiting spectroscopic ellipsometry and atomic force microscopy. It is found that the Au nanoclusters aspect ratio depends on the extent of the Au-Si intermixing. The thicker the Au-Si interface layer, the larger the Au nanoparticles aspect ratio and the red-shift of the SPR peak. Furthermore, SiO{sub 2} and the H{sub 2} plasma treatment inhibit the Si-Au intermixing, while HF-dipping and the N{sub 2} plasma treatment favour Au-Si intermixing, yielding silicide formation which increases the Si wetting by Au.

  9. SiPM based readout system for PbWO4 crystals

    Science.gov (United States)

    Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

    2013-08-01

    Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

  10. SiPM based readout system for PbWO4 crystals

    International Nuclear Information System (INIS)

    Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

    2013-01-01

    Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20–100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs

  11. SiPM based readout system for PbWO{sub 4} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Berra, A., E-mail: alessandro.berra@gmail.com [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Bolognini, D.; Bonfanti, S. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Lietti, D. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Penzo, A. [INFN sezione di Trieste (Italy); Prest, M.; Stoppani, L. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

    2013-08-01

    Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20–100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

  12. Nanosystems based on siRNA silencing HuR expression counteract diabetic retinopathy in rat.

    Science.gov (United States)

    Amadio, Marialaura; Pascale, Alessia; Cupri, Sarha; Pignatello, Rosario; Osera, Cecilia; D Agata, Velia; D Amico, Agata Grazia; Leggio, Gian Marco; Ruozi, Barbara; Govoni, Stefano; Drago, Filippo; Bucolo, Claudio

    2016-09-01

    We evaluated whether specifically and directly targeting human antigen R (HuR), a member of embryonic lethal abnormal vision (ELAV) proteins family, may represent a new potential therapeutic strategy to manage diabetic retinopathy. Nanosystems loaded with siRNA silencing HuR expression (lipoplexes), consisting of solid lipid nanoparticles (SLN) and liposomes (SUV) were prepared. Photon correlation spectroscopy analysis, Zeta potential measurement and atomic force microscopy (AFM) studies were carried out to characterize the complexation of siRNA with the lipid nanocarriers. Nanosystems were evaluated by using AFM and scanning electron microscopy. The lipoplexes were injected into the eye of streptozotocin (STZ)-induced diabetic rats. Retinal HuR and VEGF levels were detected by Western blot and ELISA, respectively. Retinal histology was also carried out. The results demonstrated that retinal HuR and VEGF are significantly increased in STZ-rats and are blunted by HuR siRNA treatment. Lipoplexes with a weak positive surface charge and with a 4:1 N/P (cationic lipid nitrogen to siRNA phosphate) ratio exert a better transfection efficiency, significantly dumping retinal HuR and VEGF levels. In conclusion, we demonstrated that siRNA can be efficiently delivered into the rat retina using lipid-based nanocarriers, and some of the lipoplexes loaded with siRNA silencing HuR expression are potential candidates to manage retinal diseases. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow...

  14. Mode tunable p-type Si nanowire transistor based zero drive load logic inverter.

    Science.gov (United States)

    Moon, Kyeong-Ju; Lee, Tae-Il; Lee, Sang-Hoon; Han, Young-Uk; Ham, Moon-Ho; Myoung, Jae-Min

    2012-07-25

    A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V(DD) of -20 V was successfully fabricated on a substrate.

  15. Hydrogen adsorption in the series of carbon nanostructures: Graphenes-graphene nanotubes-nanocrystallites

    Science.gov (United States)

    Soldatov, A. P.; Kirichenko, A. N.; Tat'yanin, E. V.

    2016-07-01

    A comparative analysis of hydrogen absorption capability is performed for the first time for three types of carbon nanostructures: graphenes, oriented carbon nanotubes with graphene walls (OCNTGs), and pyrocarbon nanocrystallites (PCNs) synthesized in the pores of TRUMEM ultrafiltration membranes with mean diameters ( D m) of 50 and 90 nm, using methane as the pyrolized gas. The morphology of the carbon nanostructures is studied by means of powder X-ray diffraction, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). Hydrogen adsorption is investigated via thermogravimetric analysis (TGA) in combination with mass-spectrometry. It is shown that only OCNTGs can adsorb and store hydrogen, the desorption of which under atmospheric pressure occurs at a temperature of around 175°C. Hydrogen adsorption by OCNTGs is quantitatively determined and found to be about 1.5% of their mass. Applying certain assumptions, the relationship between the mass of carbon required for the formation of single-wall OCNTGs in membrane pores and the surface area of pores is established. Numerical factor Ψ = m dep/ m calc, where m dep is the actual mass of carbon deposited upon the formation of OCNTGs and mcalc is the calculated mass of carbon necessary for the formation of OCNTGs is introduced. It is found that the dependence of specific hydrogen adsorption on the magnitude of the factor has a maximum at Ψ = 1.2, and OCNTGs can adsorb and store hydrogen in the interval 0.4 to 0.6 hydrogen adsorption and its relationship to the structure of carbon nanoformations are examined.

  16. Property changes of urinary nanocrystallites and urine of uric acid stone formers after taking potassium citrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Guang-Na; Ouyang, Jian-Ming, E-mail: toyjm@jnu.edu.cn; Xue, Jun-Fa; Shang, Yun-Feng

    2013-10-15

    The property changes of urinary nanocrystallites in 20 cases of uric acid (UA) stone formers after 1 week of potassium citrate (K{sub 3}cit) intake were comparatively studied by X-ray diffraction analysis, Fourier transform infrared spectroscopy, nanoparticle size analysis, and transmission electron microscopy. Before K{sub 3}cit intake, the urinary crystallites mainly contained UA and calcium oxalate. After K{sub 3}cit intake, the components changed to urate and UA; the qualities, species, and amounts of aggregated crystallites decreased; urine pH, citrate, and glycosaminoglycan excretions increased; and UA excretion, Zeta potential, and crystallite size decreased. The stability of crystallites followed the order: controls > patients after taking K{sub 3}cit > patients before taking K{sub 3}cit. Therefore, the components of urinary stones were closely related to the components of urinary crystallites. - Graphical abstract: The relationships among stone components, urinary crystallite components, and urine pH were established. The crystallites stability order was: controls > patients after taking K{sub 3}cit > patients before taking K{sub 3}cit. Highlights: • Urine crystallite property of uric acid stone former after K{sub 3}cit intake was studied. • The components of crystallites in urine are closely related to type of stones. • After K{sub 3}cit intake the qualities and species of crystallites decreased. • After K{sub 3}cit intake the amount of aggregated crystallites decreased. • The stability of urinary crystallites of UA patients increased after taking K{sub 3}cit.

  17. Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

    Directory of Open Access Journals (Sweden)

    Hao Liu

    2017-12-01

    Full Text Available Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

  18. Highly sensitive work function hydrogen gas sensor based on PdNPs/SiO2/Si structure at room temperature

    Directory of Open Access Journals (Sweden)

    G. Behzadi pour

    Full Text Available In this study, fabrication of highly sensitive PdNPs/SiO2/Si hydrogen gas sensor using experimental and theoretical methods has been investigated. Using chemical method the PdNPs are synthesized and characterized by X-ray diffraction (XRD. The average size of PdNPs is 11 nm. The thickness of the oxide film was 20 nm and the surface of oxide film analyzed using Atomic-force microscopy (AFM. The C-V curve for the PdNPs/SiO2/Si hydrogen gas sensor in 1% hydrogen concentration and at the room temperature has been reported. The response time and recovery time for 1% hydrogen concentration at room temperature were 1.2 s and 10 s respectively. The response (R% for PdNPs/SiO2/Si MOS capacitor hydrogen sensor was 96%. The PdNPs/SiO2/Si MOS capacitor hydrogen sensor showed very fast response and recovery times compared to SWCNTs/PdNPs, graphene/PdNPs, nanorod/PdNPs and nanowire/PdNPs hydrogen gas sensors. Keywords: Sensitive, Oxide film, Capacitive, Resistance

  19. Highly efficient holograms based on c-Si metasurfaces in the visible range.

    Science.gov (United States)

    Martins, Augusto; Li, Juntao; da Mota, Achiles F; Wang, Yin; Neto, Luiz G; do Carmo, João P; Teixeira, Fernando L; Martins, Emiliano R; Borges, Ben-Hur V

    2018-04-16

    This paper reports on the first hologram in transmission mode based on a c-Si metasurface in the visible range. The hologram shows high fidelity and high efficiency, with measured transmission and diffraction efficiencies of ~65% and ~40%, respectively. Although originally designed to achieve full phase control in the range [0-2π] at 532 nm, these holograms have also performed well at 444.9 nm and 635 nm. The high tolerance to both fabrication and wavelength variations demonstrate that holograms based on c-Si metasurfaces are quite attractive for diffractive optics applications, and particularly for full-color holograms.

  20. Time over threshold readout method of SiPM based small animal PET detector

    International Nuclear Information System (INIS)

    Valastyan, I.; Gal, J.; Hegyesi, G.; Kalinka, G.; Nagy, F.; Kiraly, B.; Imrek, J.; Molnar, J.

    2012-01-01

    Complete text of publication follows. The aim of the work was to design a readout concept for silicon photomultiplier (SiPM) sensor array used in small animal PET scanner. The detector module consist of LYSO 35x35 scintillation crystals, 324 SiPM sensors (arranged in 2x2 blocks and those quads in a 9x9 configuration) and FPGA based readout electronics. The dimensions of the SiPM matrix are area: 48x48 mm 2 and the size of one SiPM sensor is 1.95x2.2 mm 2 . Due to the high dark current of the SiPM, conventional Anger based readout method does not provide sufficient crystal position maps. Digitizing the 324 SiPM channels is a straightforward way to obtain proper crystal position maps. However handling hundreds of analogue input channels and the required DSP resources cause large racks of data acquisition electronics. Therefore coding of the readout channels is required. Proposed readout method: The coding of the 324 SiPMs consists two steps: Step 1) Reduction of the channels from 324 to 36: Row column readout, SiPMs are connected to each other in column by column and row-by row, thus the required channels are 36. The dark current of 18 connected SiPMs is small in off for identifying pulses coming from scintillating events. Step 2) Reduction of the 18 rows and columns to 4 channels: Comparators were connected to each rows and columns, and the level was set above the level of dark noise. Therefore only few comparators are active when scintillation light enters in the tile. The output of the comparator rows and columns are divided to two parts using resistor chains. Then the outputs of the resistor chains are digitized by a 4 channel ADC. However instead of the Anger method, time over threshold (ToT) was used. Figure 1 shows the readout concept of the SiPM matrix. In order to validate the new method and optimize the front-end electronics of the detector, the analogue signals were digitized before the comparators using a CAEN DT5740 32 channel digitizer, then the

  1. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  2. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  3. Laser operated optical features in β-BaTeMo{sub 2}O{sub 9}:Cr{sup 3+} nanocrystallites

    Energy Technology Data Exchange (ETDEWEB)

    Majchrowski, A.; Jaroszewicz, L.R. [Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); Fedorchuk, A.O. [Lviv National University of Veterinary Medicine and Biotechnologies, Department of Inorganic and Organic Chemistry, Lviv (Ukraine); Kityk, I.V., E-mail: iwank74@gmail.com [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, Czestochowa (Poland)

    2015-11-15

    An increase of second order nonlinear optical efficiency was established for Cr{sup 3+} doped β-BaTeMo{sub 2}O{sub 9} (BTMO) nanocrystallites (with sizes varying within up to 150 nm range) under influence of two coherent beams of 532 nm nanosecond pulsed lasers at power densities up to 600 MW/cm{sup 2}. It was found that maximal enhancement of optical second harmonic generation was achieved for BTMO:Cr{sup 3+} nanocrystallites possessing sizes about 60–80 nm. Occurrence of some quasi-periodic space radial grating was observed as well. This is a consequence of competition between the photo-polarization and photo-thermal effects. Band structure simulations within a framework of the norm-conserving pseudopotential were performed. - Highlights: • BMTO nanocrystallites with the sizes 60 nm–120 nm were synthesized. • Photoinduced SHG is found. • The effect is caused by additional photopolarization.

  4. Three-dimensional reciprocal space profile of an individual nanocrystallite inside a thin-film solar cell absorber layer

    International Nuclear Information System (INIS)

    Slobodskyy, Taras; Schroth, Philip; Minkevich, Andrey; Grigoriev, Daniil; Fohtung, Edwin; Riotte, Markus; Baumbach, Tilo; Powalla, Michael; Lemmer, Uli; Slobodskyy, Anatoliy

    2013-01-01

    The strain profile of an individual Cu(In,Ga)Se 2 nanocrystallite in a solar cell absorber layer is accessed using synchrotron radiation. We find that the investigated crystallite is inhomogeneously strained. The strain is most likely produced by a combination of intergranular strain and composition variations in nanocrystals inside the polycrystalline semiconductor film and carries information about the intercrystalline interaction. The measurements are made nondestructively and without additional sample preparation or x-ray beam nanofocusing. This is the first step towards measurements of strain profiles of individual crystallites inside a working solar cell. (paper)

  5. Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

    Science.gov (United States)

    Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

    2018-02-01

    Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

  6. Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

    2016-11-21

    ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

  7. Development of a Si-PM-based high-resolution PET system for small animals

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Imaizumi, Masao; Watabe, Tadashi; Shimosegawa, Eku; Hatazawa, Jun; Watabe, Hiroshi; Kanai, Yasukazu

    2010-01-01

    A Geiger-mode avalanche photodiode (Si-PM) is a promising photodetector for PET, especially for use in a magnetic resonance imaging (MRI) system, because it has high gain and is less sensitive to a static magnetic field. We developed a Si-PM-based depth-of-interaction (DOI) PET system for small animals. Hamamatsu 4 x 4 Si-PM arrays (S11065-025P) were used for its detector blocks. Two types of LGSO scintillator of 0.75 mol% Ce (decay time: ∼45 ns; 1.1 mm x 1.2 mm x 5 mm) and 0.025 mol% Ce (decay time: ∼31 ns; 1.1 mm x 1.2 mm x 6 mm) were optically coupled in the DOI direction to form a DOI detector, arranged in a 11 x 9 matrix, and optically coupled to the Si-PM array. Pulse shape analysis was used for the DOI detection of these two types of LGSOs. Sixteen detector blocks were arranged in a 68 mm diameter ring to form the PET system. Spatial resolution was 1.6 mm FWHM and sensitivity was 0.6% at the center of the field of view. High-resolution mouse and rat images were successfully obtained using the PET system. We confirmed that the developed Si-PM-based PET system is promising for molecular imaging research.

  8. Development of a SiPM-based PET imaging system for small animals

    International Nuclear Information System (INIS)

    Lu, Yanye; Yang, Kun; Zhou, Kedi; Zhang, Qiushi; Pang, Bo; Ren, Qiushi

    2014-01-01

    Advances in small animal positron emission tomography (PET) imaging have been accelerated by many new technologies such as the successful incorporation of silicon photomultiplier (SiPM). In this paper, we have developed a compact, lightweight PET imaging system that is based on SiPM detectors for small animals imaging, which could be integrated into a multi-modality imaging system. This PET imaging system consists of a stationary detector gantry, a motor-controlled animal bed module, electronics modules, and power supply modules. The PET detector, which was designed as a multi-slice circular ring geometry of 27 discrete block detectors, is composed of a cerium doped lutetium–yttrium oxyorthosilicate (LYSO) scintillation crystal and SiPM arrays. The system has a 60 mm transaxial field of view (FOV) and a 26 mm axial FOV. Performance tests (e.g. spatial resolution, energy resolution, and sensitivity) and phantom and animal imaging studies were performed to evaluate the imaging performance of the PET imaging system. The performance tests and animal imaging results demonstrate the feasibility of an animal PET system based on SiPM detectors and indicate that SiPM detectors can be promising photodetectors in animal PET instrumentation development

  9. Development of a SiPM-based PET imaging system for small animals

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yanye [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Yang, Kun, E-mail: yangkun9999@hotmail.com [Department of Control Technology and Instrumentation, College of Quality and Technical Supervision, Hebei University, Baoding, 071000 (China); Zhou, Kedi; Zhang, Qiushi; Pang, Bo [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Ren, Qiushi, E-mail: renqsh@coe.pku.edu.cn [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China)

    2014-04-11

    Advances in small animal positron emission tomography (PET) imaging have been accelerated by many new technologies such as the successful incorporation of silicon photomultiplier (SiPM). In this paper, we have developed a compact, lightweight PET imaging system that is based on SiPM detectors for small animals imaging, which could be integrated into a multi-modality imaging system. This PET imaging system consists of a stationary detector gantry, a motor-controlled animal bed module, electronics modules, and power supply modules. The PET detector, which was designed as a multi-slice circular ring geometry of 27 discrete block detectors, is composed of a cerium doped lutetium–yttrium oxyorthosilicate (LYSO) scintillation crystal and SiPM arrays. The system has a 60 mm transaxial field of view (FOV) and a 26 mm axial FOV. Performance tests (e.g. spatial resolution, energy resolution, and sensitivity) and phantom and animal imaging studies were performed to evaluate the imaging performance of the PET imaging system. The performance tests and animal imaging results demonstrate the feasibility of an animal PET system based on SiPM detectors and indicate that SiPM detectors can be promising photodetectors in animal PET instrumentation development.

  10. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    Science.gov (United States)

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  11. High-performance carbon-coated ZnMn2O4 nanocrystallite supercapacitors with tailored microstructures enabled by a novel solution combustion method

    Science.gov (United States)

    Abdollahifar, Mozaffar; Huang, Sheng-Siang; Lin, Yu-Hsiang; Lin, Yan-Cheng; Shih, Bing-Yi; Sheu, Hwo-Shuenn; Liao, Yen-Fa; Wu, Nae-Lih

    2018-02-01

    Although ZnMn2O4 is widely studied as Li-ion battery anodes, it remains a challenge to tailor suitable microstructures of the oxide for supercapacitor applications. Carbon-coated ZnMn2O4 (C@ZMO) nanocrystallites showing high-performance pseudocapacitor behaviours in neutral aqueous electrolyte are for the first time successfully synthesised via a novel solution combustion process using polyethylene glycol as a multifunctional microstructure-directing agent. Controlling the molecular weight and amount of the polymer in the combustion solution enables the formation of highly-crystalline C@ZMO having substantially higher, by more than 5 folds, specific surface areas with mesoporous structures and conformal carbon coating via the one-pot synthesis process. The resulting C@ZMO supercapacitor electrodes in Na2SO4(aq) electrolyte exhibit ideal capacitive behaviours with specific capacitances up to 150 F g-1 and cycle stability showing no capacitance fade after 10,000 cycles at 60% of full capacity and >99% Coulombic efficiency. This study not only illustrates a new powerful synthesis route capable of producing conductive mesoporous crystalline oxide-based nanomaterials for energy storage applications but also reveals a new class of high-performance pseudocapacitive materials for neutral aqueous electrolytes.

  12. Voltage tunable two-band MIR detection based on Si/SiGe quantum cascade injector structures

    International Nuclear Information System (INIS)

    Grydlik, M.; Rauter, P.; Meduna, M.; Fromherz, T.; Bauer, G.; Falub, C.; Dehlinger, G.; Sigg, H.; Gruetzmacher, D.

    2004-01-01

    We report the results of photocurrent spectroscopy in the mid-infrared (MIR) spectral region performed on p-type Si/SiGe cascade structures. The samples were grown by MBE and consist of a series of five SiGe quantum wells with ground states that can be coupled through thin Si barriers by aligning them in energy with an externally applied electric field E bi . Quantum wells and barriers are Boron doped to a level of 2.5 10 17 cm -3 . Our samples contain 10 sequences of the 5 quantum wells separated by 500 nm thick, undoped Si barriers. Vertical photocurrent spectroscopy has been performed for various electric fields applied perpendicular to the quantum wells at temperatures between 10 K and 100 K. Depending on the direction of the externally applied electric field relative to E bi , the photoresponse of our samples can be switched between two MIR detection bands with maxima at 230 meV and 400 meV. Due to the inversion asymmetry of the samples, at 0 V external voltage the samples deliver a short circuit current in the high-energy spectral band. Since the quantum cascades are formed in the valence band of the Si/SiGe structures, the quantum well transitions responsible for the observed photocurrents are allowed for radiation polarized parallel to the quantum wells. Therefore, these structures appear to be suitable for voltage tuneable MIR detection under normal incident radiation. By comparing the experimental results to model calculations, design strategies to optimize the responsivity of the Si/SiGe cascade structures are discussed. (author)

  13. Design of a crystalline undulator based on patterning by tensile Si3N4 strips on a Si crystal

    International Nuclear Information System (INIS)

    Guidi, V.; Lanzoni, L.; Mazzolari, A.; Martinelli, G.; Tralli, A.

    2007-01-01

    A crystalline undulator consists of a crystal with a periodic deformation in which channeled particles undergo oscillations and emit coherent undulator radiation. Patterning by an alternate series of tensile Si 3 N 4 strips on a Si crystal is shown to be a tractable method to construct a crystalline undulator. The method allows periodic deformation of the crystal with the parameters suitable for implementation of a crystalline undulator. The resulting periodic deformation is present in the bulk of the Si crystal with an essentially uniform amplitude, making the entire volume of the crystal available for channeling and in turn for emission of undulator radiation

  14. Development of an angled Si-PM-based detector unit for positron emission mammography (PEM) system

    Energy Technology Data Exchange (ETDEWEB)

    Nakanishi, Kouhei, E-mail: nakanishi.kouhei@c.mbox.nagoya-u.ac.jp; Yamamoto, Seiichi

    2016-11-21

    Positron emission mammography (PEM) systems have higher sensitivity than clinical whole body PET systems because they have a smaller ring diameter. However, the spatial resolution of PEM systems is not high enough to detect early stage breast cancer. To solve this problem, we developed a silicon photomultiplier (Si-PM) based detector unit for the development of a PEM system. Since a Si-PM's channel is small, Si-PM can resolve small scintillator pixels to improve the spatial resolution. Also Si-PM based detectors have inherently high timing resolution and are able to reduce the random coincidence events by reducing the time window. We used 1.5×1.9×15 mm LGSO scintillation pixels and arranged them in an 8×24 matrix to form scintillator blocks. Four scintillator blocks were optically coupled to Si-PM arrays with an angled light guide to form a detector unit. Since the light guide has angles of 5.625°, we can arrange 64 scintillator blocks in a nearly circular shape (a regular 64-sided polygon) using 16 detector units. We clearly resolved the pixels of the scintillator blocks in a 2-dimensional position histogram where the averages of the peak-to-valley ratios (P/Vs) were 3.7±0.3 and 5.7±0.8 in the transverse and axial directions, respectively. The average energy resolution was 14.2±2.1% full-width at half-maximum (FWHM). By including the temperature dependent gain control electronics, the photo-peak channel shifts were controlled within ±1.5% with the temperature from 23 °C to 28 °C. With these results, in addition to the potential high timing performance of Si-PM based detectors, our developed detector unit is promising for the development of a high-resolution PEM system.

  15. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    Science.gov (United States)

    Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

    2017-10-01

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  16. System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lockin Amplification

    DEFF Research Database (Denmark)

    Patou, François; Dimaki, Maria; Kjærgaard, Claus

    2017-01-01

    carry out for the first time the system-level sensitivity analysis of a generic SiNW-bioFET model coupled to a custom-design instrument based on the lock-in amplifier. By investigating a large parametric space spanning over both sensor and instrumentation specifications, we demonstrate that systemwide...

  17. Improving the performance of si-based li-ion battery anodes by utilizing phosphorene encapsulation

    NARCIS (Netherlands)

    Peng, B.; Xu, Y.; Mulder, F.M.

    2017-01-01

    Si-based anode materials in Li-ion batteries (LIBs) suffer from severe volume expansion/contraction during repetitive discharge/charge, which results in the pulverization of active materials, continuous growth of solid electrolyte interface (SE!) layers, loss of electrical conduction, and,

  18. Enhanced thermal conductivity of nano-SiC dispersed water based ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) nanoparticle dispersed water based nanofluids were prepared using up to 0.1 vol% of nanoparticles. Use of suitable stirring routine ensured uniformity and stability of dispersion. Thermal conductivity ratio of nanofluid measured using transient hot wire device shows a significant increase of up to 12% ...

  19. One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials

    KAUST Repository

    Choi, Nam-Soon

    2011-01-01

    There has been tremendous interest in using nanomaterials for advanced Li-ion battery electrodes, particularly to increase the energy density by using high specific capacity materials. Recently, it was demonstrated that one dimensional (1D) Si/Sn nanowires (NWs) and nanotubes (NTs) have great potential to achieve high energy density as well as long cycle life for the next generation of advanced energy storage applications. In this feature article, we review recent progress on Si-based NWs and NTs as high capacity anode materials. Fundamental understanding and future challenges on one dimensional nanostructured anode are also discussed. © 2010 The Royal Society of Chemistry.

  20. Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

    Directory of Open Access Journals (Sweden)

    Lin Yu

    2011-01-01

    Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

  1. A micro-structured Si-based electrodes for high capacity electrical double layer capacitors

    International Nuclear Information System (INIS)

    Krikscikas, Valdas; Oguchi, Hiroyuki; Hara, Motoaki; Kuwano, Hiroki; Yanazawa, Hiroshi

    2014-01-01

    We challenged to make basis for Si electrodes of electric double layer capacitors (EDLC) used as a power source of micro-sensor nodes. Mcroelectromechanical systems (MEMS) processes were successfully introduced to fabricate micro-structured Si-based electrodes to obtain high surface area which leads to high capacity of EDLCs. Study of fundamental properties revealed that the microstructured electrodes benefit from good wettability to electrolytes, but suffer from electric resistance. We found that this problem can be solved by metal-coating of the electrode surface. Finally we build an EDLC consisting of Au-coated micro-structured Si electrodes. This EDLC showed capacity of 14.3 mF/cm 2 , which is about 530 times larger than that of an EDLC consisting of flat Au electrodes

  2. Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

    KAUST Repository

    Fuentes-Fernandez, E. M A

    2014-08-07

    The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

  3. Vanadium Influence on Iron Based Intermetallic Phases in AlSi6Cu4 Alloy

    Directory of Open Access Journals (Sweden)

    Bolibruchová D.

    2014-10-01

    Full Text Available Negative effect of iron in Al-Si alloys mostly refers with iron based intermetallic phases, especially Al5FeSi phases. These phases are present in platelet-like forms, which sharp edges are considered as main cracks initiators and also as contributors of porosity formation. In recent times, addition of some elements, for example Mn, Co, Cr, Ni, V, is used to reduce influence of iron. Influence of vanadium in aluminium AlSi6Cu4 alloy with intentionally increased iron content is presented in this article. Vanadium amount has been graduated and chemical composition of alloy has been analysed by spectral analysis. Vanadium influence on microstructural changes was evaluated by microstructural analysis and some of intermetallic particles were reviewed by EDX analysis.

  4. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...... by an optimization process to facilitate the extraction of the model’s parameters in a more automated way relying on a small number of experimental waveforms. Through extensive experimental work, it is shown that the model accurately predicts both static and dynamic performances. The series connection of two Si......C power modules has been investigated through the validation of the static and dynamic conditions. Thanks to the developed model, a better understanding of the challenges introduced by uneven voltage balance sharing among series connected devices is possible....

  5. Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

    KAUST Repository

    Fuentes-Fernandez, E. M A; Salomon-Preciado, A. M.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo; Shah, Pradeep; Alshareef, Husam N.

    2014-01-01

    The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.

  6. FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

    Directory of Open Access Journals (Sweden)

    Muhammad Zubair Aslam

    2018-05-01

    Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

  7. Preparation of TiO2 Nanocrystallite Powders Coated with 9 mol% ZnO for Cosmetic Applications in Sunscreens

    Directory of Open Access Journals (Sweden)

    Moo-Chin Wang

    2012-02-01

    Full Text Available The preparation of TiO2 nanocrystallite powders coated with and without 9 mol% ZnO has been studied for cosmetic applications in sunscreens by a co-precipitation process using TiCl4 and Zn(NO32·6H2O as starting materials. XRD results show that the phases of anatase TiO2 and rutile TiO2 coexist for precursor powders without added ZnO (T-0Z and calcined at 523 to 973 K for 2 h. When the T-0Z precursor powders are calcined at 1273 K for 2 h, only the rutile TiO2 appears. In addition, when the TiO2 precursor powders contain 9 mol% ZnO (T-9Z are calcined at 873 to 973 K for 2 h, the crystallized samples are composed of the major phase of rutile TiO2 and the minor phases of anatase TiO2 and Zn2Ti3O8. The analyses of UV/VIS/NIR spectra reveal that the absorption of the T-9Z precursor powders after being calcined has a red-shift effect in the UV range with increasing calcination temperature. Therefore, the TiO2 nanocrystallite powders coated with 9 mol% ZnO can be used as the attenuate agent in the UV-A region for cosmetic applications in sunscreens.

  8. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

    International Nuclear Information System (INIS)

    Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

    2015-01-01

    A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10 6 S/m 2 ), susceptance (10.4 × 10 7 S/m 2 ), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems. (paper)

  9. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Science.gov (United States)

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  10. Oxygen reduction and methanol oxidation behaviour of SiC based Pt nanocatalysts for proton exchange membrane fuel cells

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Stamatin, Serban Nicolae; Andersen, Shuang Ma

    2013-01-01

    for carbon based commercial catalyst, when HClO4 is used as electrolyte. The Pt (110) & Pt (111) facets are shown to have higher electrochemical activities than Pt (100) facets. To the best of our knowledge, methanol oxidation studies and the comparison of peak deconvolutions of the H desorption region in CV...... and methanol oxidation reactions of SiC supported catalysts and measured them against commercially available carbon based catalysts. The deconvolution of the hydrogen desorption signals in CV cycles shows a higher contribution of Pt (110) & Pt (111) peaks compared to Pt (100) for SiC based supports than...... cyclic studies are here reported for the first time for SiC based catalysts. The reaction kinetics for the oxygen reduction and for methanol oxidation with Pt/SiC are observed to be similar to the carbon based catalysts. The SiC based catalyst shows a higher specific surface activity than BASF (Pt...

  11. Evolution of Fe based intermetallic phases in Al–Si hypoeutectic casting alloys: Influence of the Si and Fe concentrations, and solidification rate

    International Nuclear Information System (INIS)

    Gorny, Anton; Manickaraj, Jeyakumar; Cai, Zhonghou; Shankar, Sumanth

    2013-01-01

    Highlights: •Anomalous evolution of Fe based intermetallic phases in Al–Si–Fe alloys. •XRF coupled with nano-diffraction to confirm the nano-size Fe intermetallic phases. •Crystallography of the θ-Al 13 Fe 4 , τ 5 -Al 8 Fe 2 Si and τ 6 -Al 9 Fe 2 Si 2 phases. •Peritectic reactions involving the Fe intermetallic phases in Al–Si–Fe alloys. -- Abstract: Al–Si–Fe hypoeutectic cast alloy system is very complex and reported to produce numerous Fe based intermetallic phases in conjunction with Al and Si. This publication will address the anomalies of phase evolution in the Al–Si–Fe hypoeutectic casting alloy system; the anomaly lies in the peculiarities in the evolution and nature of the intermetallic phases when compared to the thermodynamic phase diagram predictions and past publications of the same. The influence of the following parameters, in various combinations, on the evolution and nature of the intermetallic phases were analyzed and reported: concentration of Si between 2 and 12.6 wt%, Fe between 0.05 and 0.5 wt% and solidification rates of 0.1, 1, 5 and 50 K s −1 . Two intermetallic phases are observed to evolve in these alloys under these solidification conditions: the τ 5 -Al 8 SiFe 2 and τ 6 -Al 9 Fe 2 Si 2 . The τ 5 -Al 8 SiFe 2 phase evolves at all levels of the parameters during solidification and subsequently transforms into the τ 6 -Al 9 Fe 2 Si 2 through a peritectic reaction when promoted by certain combinations of solidification parameters such as higher Fe level, lower Si level and slower solidification rates. Further, it is also hypothesized from experimental evidences that the θ-Al 13 Fe 4 binary phase precludes the evolution of the τ 5 during solidification and subsequently transforms into the τ 6 phase during solidification. These observations are anomalous to the publications as prior art and simulation predictions of thermodynamic phase diagrams of these alloys, wherein, only one intermetallic phases in the

  12. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    International Nuclear Information System (INIS)

    Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

    2009-01-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  13. Synthesis and analysis of Mo-Si-B based coatings for high temperature oxidation protection of ceramic materials

    Science.gov (United States)

    Ritt, Patrick J.

    The use of Ni-based superalloys in turbine engines has all but been exhausted, with operating temperatures nearing the melting point of these materials. The use of ceramics in turbine engines, particularly ceramic matrix composites such as SiC/C and SiC/SiC, is of interest due to their low density and attractive mechanical properties at elevated temperatures. The same materials are also in consideration for leading edges on hypersonic vehicles. However, SiC-based composites degrade in high temperature environments with low partial pressures of oxygen due to active oxidation, as well as high temperature environments containing water or sand. The need for a protective external coating for SiC-based composites in service is obvious. To date, no coating investigated for SiC/C or SiC/SiC has been proven to be resistant to oxidation and corrosion at intermediate and high temperatures, as well as in environments deficient in oxygen. The Mo-Si-B coating shows great promise in this area, having been proven resistant to attack from oxidation at extreme temperatures, from water vapor and from calcia-magnesia-aluminosilicate (CMAS). The adaptation of the Mo-Si-B coating for ceramic materials is presented in detail here. Evaluation of the coating under a range of oxidation conditions as well as simulated re-entry conditions confirms the efficacy of the Mo-Si-B based coating as protection from catastrophic failure. The key to the oxidation and corrosion resistance is a robust external aluminoborosilica glass layer that forms and flows quickly to cover the substrate, even under the extreme simulated re-entry conditions. Suppression of active oxidation of SiC, which may occur during atmospheric re-entry and hypersonic flight trajectories, has also been examined. In order to adapt the Mo-Si-B based coating to low partial pressures of oxygen and elevated temperatures, controlled amounts of Al were added to the Mo-Si-B based coating. The resulting coating decreased the inward

  14. Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

    International Nuclear Information System (INIS)

    Liao, Shu-Hui; Chang, Shu-Tong

    2010-01-01

    This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

  15. Development of high temperature resistant ceramic matrix composites based on SiC- and novel SiBNC-fibres

    International Nuclear Information System (INIS)

    Daenicke, Enrico

    2014-01-01

    Novel ceramic fibres in the quaternary system Si-B-C-N exhibit excellent high temperature stability and creep resistance. In th is work it was investigated, to what extent these outstanding properties of SiBNC-fibres can be transferred into ceramic matrix composites (CMC) in comparison to commercial silicon carbide (SiC) fibres. For the CMC development the liquid silicon infiltration (LSI) as well as the polymer infiltration and pyrolysis process (PIP) was applied. Extensive correlations between fibre properties, fibre coating (without, pyrolytic carbon, lanthanum phosphate), process parameters of the CMC manufacturing method and the mechanical and microstructural properties of the CMC before and after exposure to air could be established. Hence, the potential of novel CMCs can be assessed and application fields can be derived.

  16. Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Young Mi [Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang, 305-764 (Korea, Republic of); Jung, Min-Sang; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr, E-mail: mcjung@oist.jp [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jung, Min-Cherl, E-mail: duck@hanyang.ac.kr, E-mail: mcjung@oist.jp [Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa, 904-0495 (Japan)

    2015-08-15

    Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

  17. Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

    Directory of Open Access Journals (Sweden)

    Young Mi Lee

    2015-08-01

    Full Text Available Using scanning electron microscopy (SEM and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiOx-capped Si, and SiO2-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

  18. Structural and Spectroscopic Studies of Sm3+/CdS Nanocrystallites in Sol-Gel TiO2-ZrO2 Matrix

    Science.gov (United States)

    Karthika, S.; Prathibha, Vasudevan; Ann, Mary K. A.; Viji, Vidyadharan; Biju, P. R.; Unnikrishnan, N. V.

    2014-02-01

    A sol-gel method was used to prepare titania-zirconia matrices doped with Sm3+/CdS nanocrystallites. The structural properties of the matrices were characterized using transmission electron microscopy (TEM), thermogravimetric analysis (TGA), differential thermal analysis (DTA), and Fourier-transform infrared spectroscopy studies. The thermal stability of the material was determined by TGA/DTA analysis. The absorption spectrum shows the characteristic peaks of the Sm3+ ions and the absorption peak corresponding to the CdS nanocrystallites. The optical bandgap and size of the CdS nanoparticles were calculated from the absorption spectrum. From TEM, the interplanar distance ( d) was estimated to be 3.533 Å, which matches with the (1 0 0) plane of bulk CdS. The measurements yield a nanocrystallite size of around 7.8 nm. The optical absorption and emission spectra confirmed the formation of CdS nanoparticles along with samarium ions in the titania-zirconia matrices. The fluorescence intensity of the samarium ions was found to be greatly enhanced by codoping with CdS nanocrystallites.

  19. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    Energy Technology Data Exchange (ETDEWEB)

    Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

    2016-08-31

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  20. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    International Nuclear Information System (INIS)

    Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.

    2016-01-01

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  1. Emerging RNA-based drugs: siRNAs, microRNAs and derivates.

    Science.gov (United States)

    Pereira, Tiago Campos; Lopes-Cendes, Iscia

    2012-09-01

    An emerging new category of therapeutic agents based on ribonucleic acid has emerged and shown very promising in vitro, animal and pre-clinical results, known as small interfering RNAs (siRNAs), microRNAs mimics (miRNA mimics) and their derivates. siRNAs are small RNA molecules that promote potent and specific silencing of mutant, exogenous or aberrant genes through a mechanism known as RNA interference. These agents have called special attention to medicine since they have been used to experimentally treat a series of neurological conditions with distinct etiologies such as prion, viral, bacterial, fungal, genetic disorders and others. siRNAs have also been tested in other scenarios such as: control of anxiety, alcohol consumption, drug-receptor blockage and inhibition of pain signaling. Although in a much earlier stage, miRNAs mimics, anti-miRs and small activating RNAs (saRNAs) also promise novel therapeutic approaches to control gene expression. In this review we intend to introduce clinicians and medical researchers to the most recent advances in the world of siRNA- and miRNA-mediated gene control, its history, applications in cells, animals and humans, delivery methods (an yet unsolved hurdle), current status and possible applications in future clinical practice.

  2. Investigation based on nano-electromechanical system double Si3N4 resonant beam pressure sensor.

    Science.gov (United States)

    Yang, Chuan; Guo, Can; Yuan, Xiaowei

    2011-12-01

    This paper presents a type of NEMS (Nano-Electromechanical System) double Si3N4 resonant beams pressure sensor. The mathematical models are established in allusion to the Si3N4 resonant beams and pressure sensitive diaphragm. The distribution state of stress has been analyzed theoretically based on the mathematical model of pressure sensitive diaphragm; from the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm was optimized and then the dominance observed after the double resonant beams are adopted is illustrated. From the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm is optimized, illustrating advantages in the adoption of double resonant beams. The capability of the optimized sensor was generally analyzed using the ANSYS software of finite element analysis. The range of measured pressure is 0-400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity of the sensor is 498.24 Hz/Kpa, higher than the traditional sensors. Finally the processing techniques of the sensor chip have been designed with sample being successfully processed.

  3. Synthesis and characterization of SiC based composite materials for immobilizing radioactive graphite

    Science.gov (United States)

    Wang, Qing; Teng, Yuancheng; Wu, Lang; Zhang, Kuibao; Zhao, Xiaofeng; Hu, Zhuang

    2018-06-01

    In order to immobilize high-level radioactive graphite, silicon carbide based composite materials{ (1-x) SiC· x MgAl2O4 (0.1 ≤ x≤0.4) } were fabricated by solid-state reaction at 1370 °C for 2 h in vacuum. Residual graphite and precipitated corundum were observed in the as-synthesized product, which attributed to the interface reaction of element silicon and magnesium compounds. To further understand the reasons for the presence of graphite and corundum, the effects of mole ratio of Si/C, MgAl2O4 content and non-stoichiometry of MgAl2O4 on the synthesis were investigated. To immobilize graphite better, residual graphite should be eliminated. The target product was obtained when the mole ratio of Si/C was 1.3:1, MgAl2O4 content was x = 0.2, and the mole ratio of Al to Mg in non-stoichiometric MgAl2O4 was 1.7:1. In addition, the interface reaction between magnesium compounds and silicon not graphite was displayed by conducting a series of comparative experiments. The key factor for the occurrence of interface reaction is that oxygen atom is transferred from magnesium compound to SiO gas. Infrared and Raman spectrum revealed the increased disorders of graphite after being synthesized.

  4. Sign Learning Kink-based (SiLK) Quantum Monte Carlo for molecular systems

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xiaoyao [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803 (United States); Hall, Randall W. [Department of Natural Sciences and Mathematics, Dominican University of California, San Rafael, California 94901 (United States); Department of Chemistry, Louisiana State University, Baton Rouge, Louisiana 70803 (United States); Löffler, Frank [Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803 (United States); Kowalski, Karol [William R. Wiley Environmental Molecular Sciences Laboratory, Battelle, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Bhaskaran-Nair, Kiran; Jarrell, Mark; Moreno, Juana [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803 (United States); Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803 (United States)

    2016-01-07

    The Sign Learning Kink (SiLK) based Quantum Monte Carlo (QMC) method is used to calculate the ab initio ground state energies for multiple geometries of the H{sub 2}O, N{sub 2}, and F{sub 2} molecules. The method is based on Feynman’s path integral formulation of quantum mechanics and has two stages. The first stage is called the learning stage and reduces the well-known QMC minus sign problem by optimizing the linear combinations of Slater determinants which are used in the second stage, a conventional QMC simulation. The method is tested using different vector spaces and compared to the results of other quantum chemical methods and to exact diagonalization. Our findings demonstrate that the SiLK method is accurate and reduces or eliminates the minus sign problem.

  5. Sign Learning Kink-based (SiLK) Quantum Monte Carlo for molecular systems

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xiaoyao [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Hall, Randall W. [Department of Natural Sciences and Mathematics, Dominican University of California, San Rafael, California 94901, USA; Department of Chemistry, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Löffler, Frank [Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Kowalski, Karol [William R. Wiley Environmental Molecular Sciences Laboratory, Battelle, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Bhaskaran-Nair, Kiran [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Jarrell, Mark [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Moreno, Juana [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA; Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA

    2016-01-07

    The Sign Learning Kink (SiLK) based Quantum Monte Carlo (QMC) method is used to calculate the ab initio ground state energies for multiple geometries of the H2O, N2, and F2 molecules. The method is based on Feynman’s path integral formulation of quantum mechanics and has two stages. The first stage is called the learning stage and reduces the well-known QMC minus sign problem by optimizing the linear combinations of Slater determinants which are used in the second stage, a conventional QMC simulation. The method is tested using different vector spaces and compared to the results of other quantum chemical methods and to exact diagonalization. Our findings demonstrate that the SiLK method is accurate and reduces or eliminates the minus sign problem.

  6. Electrocatalytic activity of Pt grown by ALD on carbon nanotubes for Si-based DMFC applications

    DEFF Research Database (Denmark)

    Johansson, Alicia Charlotte; Dalslet, Bjarke Thomas; Yang, R.B.

    2012-01-01

    in a top-flow ALD reactor at 250°C, using MeCpPtMe3 and O2 as precursors. The anode was tested for the methanol oxidation reaction (MOR) in a three-electrode electrochemical set-up and it showed improved catalytic activity compared to a reference sample of Pt deposited on flat Si. It is demonstrated......We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out...... that ALD could be a MEMS compatible deposition technique for Si-based fuel cell applications. © The Electrochemical Society....

  7. AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

    International Nuclear Information System (INIS)

    Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

    2002-01-01

    Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

  8. Sign Learning Kink-based (SiLK) Quantum Monte Carlo for molecular systems

    International Nuclear Information System (INIS)

    Ma, Xiaoyao; Hall, Randall W.; Löffler, Frank; Kowalski, Karol; Bhaskaran-Nair, Kiran; Jarrell, Mark; Moreno, Juana

    2016-01-01

    The Sign Learning Kink (SiLK) based Quantum Monte Carlo (QMC) method is used to calculate the ab initio ground state energies for multiple geometries of the H 2 O, N 2 , and F 2 molecules. The method is based on Feynman’s path integral formulation of quantum mechanics and has two stages. The first stage is called the learning stage and reduces the well-known QMC minus sign problem by optimizing the linear combinations of Slater determinants which are used in the second stage, a conventional QMC simulation. The method is tested using different vector spaces and compared to the results of other quantum chemical methods and to exact diagonalization. Our findings demonstrate that the SiLK method is accurate and reduces or eliminates the minus sign problem

  9. Research on design and firing performance of Si-based detonator

    Directory of Open Access Journals (Sweden)

    Rui-zhen Xie

    2014-03-01

    Full Text Available For the chip integration of MEMS (micro-electromechanical system safety and arming device, a miniature detonator needs to be developed to reduce the weight and volume of explosive train. A Si-based micro-detonator is designed and fabricated, which meets the requirement of MEMS safety and arming device. The firing sensitivity of micro-detonator is tested according to GJB/z377A-94 sensitivity test methods: Langlie. The function time of micro-detonator is measured using wire probe and photoelectric transducer. The result shows the average firing voltage is 6.4 V when the discharge capacitance of firing electro-circuit is 33 μF. And the average function time is 5.48 μs. The firing energy actually utilized by Si-based micro-detonator is explored.

  10. A photovoltaic self-powered gas sensor based on a single-walled carbon nanotube/Si heterojunction.

    Science.gov (United States)

    Liu, L; Li, G H; Wang, Y; Wang, Y Y; Li, T; Zhang, T; Qin, S J

    2017-12-07

    We present a novel photovoltaic self-powered gas sensor based on a p-type single-walled carbon nanotube (SWNT) and n-type silicon (n-Si) heterojunction. The energy from visible light suffices to drive the device owing to a built-in electric field (BEF) induced by the differences between the Fermi levels of SWNTs and n-Si.

  11. A new configuration of the Moxon-Rae detector based on Si detector

    International Nuclear Information System (INIS)

    Niu, H.; Hsu, J.Y.; Liang, J.H.; Yuan, L.G.

    2002-01-01

    A new Moxon-Rae detector configuration based on Si semiconductor detector was proposed in this paper. Three γ-ray sources, 137 Cs, 60 Co, and 24 Na, were employed to make actual measurements using the new Moxon-Rae detector. The measured pulse height spectra and detection efficiencies were compared with the EGS4 simulated values. The results revealed that the proposed new configuration is indeed a successful method and specially a useful technique for higher energy γ-ray measurement

  12. Carrier loss mechanisms in textured crystalline Si-based solar cells

    OpenAIRE

    Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

    2017-01-01

    A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed. In the established method, the carrier loss mechanisms are characterized from the external quantum efficiency (EQE) analysis with very low computational cost. In particula...

  13. Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment

    Science.gov (United States)

    Zawawi, S. A.; Hamzah, A. A.; Mohd-Yasin, F.; Majlis, B. Y.

    2017-08-01

    In this project, SiC based MEMS capacitive microphone was developed for detecting leaked gas in extremely harsh environment such as coal mines and petroleum processing plants via ultrasonic detection. The MEMS capacitive microphone consists of two parallel plates; top plate (movable diaphragm) and bottom (fixed) plate, which separated by an air gap. While, the vent holes were fabricated on the back plate to release trapped air and reduce damping. In order to withstand high temperature and pressure, a 1.0 μm thick SiC diaphragm was utilized as the top membrane. The developed SiC could withstand a temperature up to 1400°C. Moreover, the 3 μm air gap is invented between the top membrane and the bottom plate via wafer bonding. COMSOL Multiphysics simulation software was used for design optimization. Various diaphragms with sizes of 600 μm2, 700 μm2, 800 μm2, 900 μm2 and 1000 μm2 are loaded with external pressure. From this analysis, it was observed that SiC microphone with diaphragm width of 1000 μm2 produced optimal surface vibrations, with first-mode resonant frequency of approximately 36 kHz. The maximum deflection value at resonant frequency is less than the air gap thickness of 8 mu;m, thus eliminating the possibility of shortage between plates during operation. As summary, the designed SiC capacitive microphone has high potential and it is suitable to be applied in ultrasonic gas leaking detection in harsh environment.

  14. The role of Si and Ca on new wrought Mg-Zn-Mn based alloy

    International Nuclear Information System (INIS)

    Ben-Hamu, G.; Eliezer, D.; Shin, K.S.

    2007-01-01

    The development of new wrought magnesium alloys for automotive industry has increased in recent years due to their high potential as structural materials for low density and high strength/weight ratio demands. However, the poor mechanical properties of the magnesium alloys have led to search a new kind of magnesium alloys for better strength and ductility. Magnesium alloys show strong susceptibility to localized corrosion in chlorides solutions due to their inhomogeneous microstructure. The existence of intermetallics in the microstructure of magnesium alloys might represent initiation sites for localized corrosion. This is due to the formation of galvanic couples between the intermetallics and the surrounding matrix. The main objective of this research is to investigate the corrosion behavior of new magnesium alloys; Mg-Zn-Mn-Si-Ca (ZSMX) alloys. The ZSM6X1 + YCa alloys were prepared by using hot extrusion method. AC and DC polarization tests were carried out on the extruded rods, which contain different amounts of silicon or calcium. The potential difference in air between different phases and the matrix was examined using scanning Kelvin probe force microscopy (SKPFM). The phases present in the alloys have been identified by optical microscopy and scanning electron microscopy/energy dispersive X-ray spectroscopy. Four different phases were found, i.e. intermetallics containing Si-Mn, Mg-Si, Mg-Zn and Mg-Si-Ca phase. All phases exhibited higher potential differences relative to magnesium matrix indicating a cathodic behavior. The potential difference revealed significant dependence on the chemical composition of the phases. Based on the results obtained from the scanning Kelvin probe force microscopy, the cathodic phases are effective sites for the initiation of localized corrosion in Mg-Zn-Mn-Si-Ca alloys

  15. Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

    Science.gov (United States)

    Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

    2013-05-01

    In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

  16. Basic aspects of photocatalytic detoxification of organic halogens by TiO2 nanocrystallites. Photolytic and radiolytic investigations

    International Nuclear Information System (INIS)

    Rabani, J.

    1998-01-01

    Various forms of TiO 2 (nanocrystallites in colloid solutions, powders and layers) are considered as promising photocatalysts for detoxification of persistent organic chemicals which are present as pollutants in waste water effluents from industrial manufacturers and even from regular households. Such pollutants penetrate and reach water sources and must be removed or destroyed in order to prevent damage to people or to the environment. Some of the toxins, such as organic halogenated compounds is difficult to remove by moderate chemical redox reactions, but can be mineralized by a free radical mechanism. Pilot plants for detoxification of industrial wastes on TiO 2 surface are currently being tested in several countries. In view of this recent development it is of particular interest to investigate yields of the reactive intermediates and reaction mechanisms of reactions of representative organic substrates. Such work is presently going on in many laboratories. In the present contribution we focus on the nature of the primary oxidizing species and the possible ways to increase photolytic yields, with particular attention to chain reactions in organic halogen compounds. Although the work concerns photocatalysis, radiation chemistry may provide useful results regarding kinetic parameters and comparative tests. Thus, comparison between photocatalytic (TiO 2 ), radiolytic and chemical hydroxylations of phenol provides evidence that the reactive hydroxylation agent is an OH· radical adsorbed to the TiO 2 surface. The initial photochemical products are conduction band electrons and valence band holes in the TiO 2 nanocrystallites, which become 'trapped' within less than 30 ps. (author)

  17. In Vitro and In Vivo Evaluation of Zinc-Modified Ca–Si-Based Ceramic Coating for Bone Implants

    Science.gov (United States)

    Zheng, Xuebin; He, Dannong; Ye, Xiaojian; Wang, Meiyan

    2013-01-01

    The host response to calcium silicate ceramic coatings is not always favorable because of their high dissolution rates, leading to high pH within the surrounding physiological environment. Recently, a zinc-incorporated calcium silicate-based ceramic Ca2ZnSi2O7 coating, developed on a Ti-6Al-4V substrate using plasma-spray technology, was found to exhibit improved chemical stability and biocompatibility. This study aimed to investigate and compare the in vitro response of osteoblastic MC3T3-E1 cells cultured on Ca2ZnSi2O7 coating, CaSiO3 coating, and uncoated Ti-6Al-4V titanium control at cellular and molecular level. Our results showed Ca2ZnSi2O7 coating enhanced MC3T3-E1 cell attachment, proliferation, and differentiation compared to CaSiO3 coating and control. In addition, Ca2ZnSi2O7 coating increased mRNA levels of osteoblast-related genes (alkaline phosphatase, procollagen α1(I), osteocalcin), insulin-like growth factor-I (IGF-I), and transforming growth factor-β1 (TGF-β1). The in vivo osteoconductive properties of Ca2ZnSi2O7 coating, compared to CaSiO3 coating and control, was investigated using a rabbit femur defect model. Histological and histomorphometrical analysis demonstrated new bone formation in direct contact with the Ca2ZnSi2O7 coating surface in absence of fibrous tissue and higher bone-implant contact rate (BIC) in the Ca2ZnSi2O7 coating group, indicating better biocompatibility and faster osseointegration than CaSiO3 coated and control implants. These results indicate Ca2ZnSi2O7 coated implants have applications in bone tissue regeneration, since they are biocompatible and able to osseointegrate with host bone. PMID:23483914

  18. In vitro and in vivo evaluation of zinc-modified ca-si-based ceramic coating for bone implants.

    Science.gov (United States)

    Yu, Jiangming; Li, Kai; Zheng, Xuebin; He, Dannong; Ye, Xiaojian; Wang, Meiyan

    2013-01-01

    The host response to calcium silicate ceramic coatings is not always favorable because of their high dissolution rates, leading to high pH within the surrounding physiological environment. Recently, a zinc-incorporated calcium silicate-based ceramic Ca2ZnSi2O7 coating, developed on a Ti-6Al-4V substrate using plasma-spray technology, was found to exhibit improved chemical stability and biocompatibility. This study aimed to investigate and compare the in vitro response of osteoblastic MC3T3-E1 cells cultured on Ca2ZnSi2O7 coating, CaSiO3 coating, and uncoated Ti-6Al-4V titanium control at cellular and molecular level. Our results showed Ca2ZnSi2O7 coating enhanced MC3T3-E1 cell attachment, proliferation, and differentiation compared to CaSiO3 coating and control. In addition, Ca2ZnSi2O7 coating increased mRNA levels of osteoblast-related genes (alkaline phosphatase, procollagen α1(I), osteocalcin), insulin-like growth factor-I (IGF-I), and transforming growth factor-β1 (TGF-β1). The in vivo osteoconductive properties of Ca2ZnSi2O7 coating, compared to CaSiO3 coating and control, was investigated using a rabbit femur defect model. Histological and histomorphometrical analysis demonstrated new bone formation in direct contact with the Ca2ZnSi2O7 coating surface in absence of fibrous tissue and higher bone-implant contact rate (BIC) in the Ca2ZnSi2O7 coating group, indicating better biocompatibility and faster osseointegration than CaSiO3 coated and control implants. These results indicate Ca2ZnSi2O7 coated implants have applications in bone tissue regeneration, since they are biocompatible and able to osseointegrate with host bone.

  19. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  20. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    International Nuclear Information System (INIS)

    Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

    2011-01-01

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  1. Synthesis of Mo5SiB2 based nanocomposites by mechanical alloying and subsequent heat treatment

    International Nuclear Information System (INIS)

    Abbasi, A.R.; Shamanian, M.

    2011-01-01

    Research highlights: → α-Mo-Mo 5 SiB 2 nanocomposite was produced after 20 h milling of Mo-Si-B powders. → Heat treatment of 5 h MAed powders led to the formation of boride phases. → Heat treatment of 10 h MAed powders led to the formation of Mo 5 SiB 2 phase. → By increasing heat treatment time, quantity of Mo 5 SiB 2 phase increased. → 5 h heat treatment of 20 h MAed powders led to the formation of Mo 5 SiB 2 -based composite. - Abstract: In this study, systematic investigations were conducted on the synthesis of Mo 5 SiB 2 -based alloy by mechanical alloying and subsequent heat treatment. In this regard, Mo-12.5 mol% Si-25 mol% B powder mixture was milled for different times. Then, the mechanically alloyed powders were heat treated at 1373 K for 1 h. The phase transitions and microstructural evolutions of powder particles during mechanical alloying and heat treatment were studied by X-ray diffractometry and scanning electron microscopy. The results showed that the phase evolutions during mechanical alloying and subsequent heat treatment are strongly dependent on milling time. After 10 h of milling, a Mo solid solution was formed, but, no intermetallic phases were detected at this stage. However, an α-Mo-Mo 5 SiB 2 nanocomposite was formed after 20 h of milling. After heat treatment of 5 h mechanically alloyed powders, small amounts of MoB and Mo 2 B were detected and α-Mo-MoB-Mo 2 B composite was produced. On the other hand, heat treatment of 10 h and 20 h mechanically alloyed powders led to the formation of an α-Mo-Mo 5 SiB 2 -MoSi 2 -Mo 3 Si composite. At this point, there is a critical milling time (10 h) for the formation of Mo 5 SiB 2 phase after heat treatment wherein below that time, boride phase and after that time, Mo 5 SiB 2 phase are formed. In the case of 20 h mechanically alloyed powders, by increasing heat treatment time, not only the quantity of α-Mo was reduced and the quantity of Mo 5 SiB 2 was increased, but also new boride

  2. Characterization of a DAQ system for the readout of a SiPM based shashlik calorimeter

    International Nuclear Information System (INIS)

    Berra, A.; Bonvicini, V.; Bosisio, L.; Lietti, D.; Penzo, A.; Prest, M.; Rabaioli, S.; Rashevskaya, I.; Vallazza, E.

    2014-01-01

    Silicon PhotoMultipliers (SiPMs) are a recently developed type of silicon photodetector characterized by high gain and insensitivity to magnetic fields, which make them a suitable detector for the next generation high energy and space physics experiments. This paper presents the performance of a readout system for SiPMs based on the MAROC3 ASIC. The ASIC consists of 64 channels working in parallel, each one with a variable gain pre-amplifier, a tunable slow shaper with a sample and hold circuit for the analog readout and a tunable fast shaper for the digital one. In the tests described in this paper, only the analog part of the ASIC has been used. A frontend board based on the MAROC3 ASIC has been tested at CERN coupled to a scintillator-lead shashlik calorimeter, readout with 36 large area SiPMs. The performance of the system has been characterized in terms of linearity and energy resolution on the CERN PS-T9 and SPS-H2 beamlines, using different configurations of the ASIC parameters

  3. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  4. A SiPM-based scintillator prototype for the upgrade of the Pierre Auger Observatory

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Johannes; Bretz, Thomas; Hebbeker, Thomas; Kemp, Julian; Meissner, Rebecca; Middendorf, Lukas; Niggemann, Tim; Peters, Christine [III. Physikalisches Institut A, RWTH Aachen University (Germany); Collaboration: Pierre-Auger-Collaboration

    2016-07-01

    Plastic scintillator-based detectors are simple and yet powerful instruments, commonly used in particle physics experiments. These detectors are also planned to be installed at the Pierre Auger Observatory as part of the upgrade called AugerPrime. Here, a single detector module will consist of several large-sized scintillator bars. Embedded wavelength shifting fibres read out the scintillation light and are coupled to a single photo-sensitive device. We investigate the application of silicon photomultipliers (SiPMs) in this scope, which benefits from high photon detection efficiency and stability. We show the performance of a SiPM-based prototype device installed in the 2 m{sup 2} detector ASCII - an early prototype of the scintillating detector planned for AugerPrime. We focus on the electronics, the optical coupling and the in situ calibration. As ASCII has been operating with SiPMs for several months now, we also highlight first high-energy events seen in coincidence with the Surface Detector of the Pierre Auger Observatory.

  5. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-01-01

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

  6. A fast preamplifier concept for SiPM-based time-of-flight PET detectors

    Energy Technology Data Exchange (ETDEWEB)

    Huizenga, J., E-mail: j.huizenga@tudelft.nl [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Seifert, S. [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Schreuder, F. [Kernfysisch Versneller Instituut, University of Groningen, Zernikelaan 25, 9747 AA Groningen (Netherlands); Dam, H.T. van [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Dendooven, P.; Loehner, H.; Vinke, R. [Kernfysisch Versneller Instituut, University of Groningen, Zernikelaan 25, 9747 AA Groningen (Netherlands); Schaart, D.R. [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands)

    2012-12-11

    Silicon photomultipliers (SiPMs) offer high gain and fast response to light, making them interesting for fast timing applications such as time-of-flight (TOF) PET. To fully exploit the potential of these photosensors, dedicated preamplifiers that do not deteriorate the rise time and signal-to-noise ratio are crucial. Challenges include the high sensor capacitance, typically >300 pF for a 3 mm Multiplication-Sign 3 mm SiPM sensor, as well as oscillation issues. Here we present a preamplifier concept based on low noise, high speed transistors, designed for optimum timing performance. The input stage consists of a transimpedance common-base amplifier with a very low input impedance even at high frequencies, which assures a good linearity and avoids that the high detector capacitance affects the amplifier bandwidth. The amplifier has a fast timing output as well as a 'slow' energy output optimized for determining the total charge content of the pulse. The rise time of the amplifier is about 300 ps. The measured coincidence resolving time (CRT) for 511 keV photon pairs using the amplifiers in combination with 3 mm Multiplication-Sign 3 mm SiPMs (Hamamatsu MPPC-S10362-33-050C) coupled to 3 mm Multiplication-Sign 3 mm Multiplication-Sign 5 mm LaBr{sub 3}:Ce and LYSO:Ce crystals equals 95 ps FWHM and 138 ps FWHM, respectively.

  7. A fast preamplifier concept for SiPM-based time-of-flight PET detectors

    International Nuclear Information System (INIS)

    Huizenga, J.; Seifert, S.; Schreuder, F.; Dam, H.T. van; Dendooven, P.; Löhner, H.; Vinke, R.; Schaart, D.R.

    2012-01-01

    Silicon photomultipliers (SiPMs) offer high gain and fast response to light, making them interesting for fast timing applications such as time-of-flight (TOF) PET. To fully exploit the potential of these photosensors, dedicated preamplifiers that do not deteriorate the rise time and signal-to-noise ratio are crucial. Challenges include the high sensor capacitance, typically >300 pF for a 3 mm×3 mm SiPM sensor, as well as oscillation issues. Here we present a preamplifier concept based on low noise, high speed transistors, designed for optimum timing performance. The input stage consists of a transimpedance common-base amplifier with a very low input impedance even at high frequencies, which assures a good linearity and avoids that the high detector capacitance affects the amplifier bandwidth. The amplifier has a fast timing output as well as a ‘slow’ energy output optimized for determining the total charge content of the pulse. The rise time of the amplifier is about 300 ps. The measured coincidence resolving time (CRT) for 511 keV photon pairs using the amplifiers in combination with 3 mm×3 mm SiPMs (Hamamatsu MPPC-S10362-33-050C) coupled to 3 mm×3 mm×5 mm LaBr 3 :Ce and LYSO:Ce crystals equals 95 ps FWHM and 138 ps FWHM, respectively.

  8. A LEGO Watt balance: An apparatus to determine a mass based on the new SI

    Science.gov (United States)

    Chao, L. S.; Schlamminger, S.; Newell, D. B.; Pratt, J. R.; Seifert, F.; Zhang, X.; Sineriz, G.; Liu, M.; Haddad, D.

    2015-11-01

    A global effort to redefine our International System of Units (SI) is underway, and the change to the new system is expected to occur in 2018. Within the newly redefined SI, the present base units will still exist but be derived from fixed numerical values of seven reference constants. In particular, the unit of mass (the kilogram) will be realized through a fixed value of the Planck constant h. A so-called watt balance, for example, can then be used to realize the kilogram unit of mass within a few parts in 108. Such a balance has been designed and constructed at the National Institute of Standards and Technology. For educational outreach and to demonstrate the principle, we have constructed a LEGO tabletop watt balance capable of measuring a gram-level masses to 1% relative uncertainty. This article presents the design, construction, and performance of the LEGO watt balance and its ability to determine h.

  9. Effects of neutron irradiation on thermal conductivity of SiC-based composites and monolithic ceramics

    International Nuclear Information System (INIS)

    Senor, D.J.; Youngblood, G.E.; Moore, C.E.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    A variety of SiC-based composites and monolithic ceramics were characterized by measuring their thermal diffusivity in the unirradiated, thermal annealed, and irradiated conditions over the temperature range 400 to 1,000 C. The irradiation was conducted in the EBR-II to doses of 33 and 43 dpa-SiC (185 EFPD) at a nominal temperature of 1,000 C. The annealed specimens were held at 1,010 C for 165 days to approximately duplicate the thermal exposure of the irradiated specimens. Thermal diffusivity was measured using the laser flash method, and was converted to thermal conductivity using density data and calculated specific heat values. Exposure to the 165 day anneal did not appreciably degrade the conductivity of the monolithic or particulate-reinforced composites, but the conductivity of the fiber-reinforced composites was slightly degraded. The crystalline SiC-based materials tested in this study exhibited thermal conductivity degradation of irradiation, presumably caused by the presence of irradiation-induced defects. Irradiation-induced conductivity degradation was greater at lower temperatures, and was typically more pronounced for materials with higher unirradiated conductivity. Annealing the irradiated specimens for one hour at 150 C above the irradiation temperature produced an increase in thermal conductivity, which is likely the result of interstitial-vacancy pair recombination. Multiple post-irradiation anneals on CVD β-SiC indicated that a portion of the irradiation-induced damage was permanent. A possible explanation for this phenomenon was the formation of stable dislocation loops at the high irradiation temperature and/or high dose that prevented subsequent interstitial/vacancy recombination

  10. Effects of neutron irradiation on thermal conductivity of SiC-based composites and monolithic ceramics

    International Nuclear Information System (INIS)

    Senor, D.J.; Youngblood, G.E.; Moore, C.E.; Trimble, D.J.; Woods, J.J.

    1997-05-01

    A variety of SiC-based composites and monolithic ceramics were characterized by measuring their thermal diffusivity in the unirradiated, thermal annealed, and irradiated conditions over the temperature range 400 to 1,000 C. The irradiation was conducted in the EBR-II to doses of 33 and 43 dpa-SiC (185 EFPD) at a nominal temperature of 1,000 C. The annealed specimens were held at 1,010 C for 165 days to approximately duplicate the thermal exposure of the irradiated specimens. Thermal diffusivity was measured using the laser flash method, and was converted to thermal conductivity using density data and calculated specific heat values. Exposure to the 165 day anneal did not appreciably degrade the conductivity of the monolithic or particulate-reinforced composites, but the conductivity of the fiber-reinforced composites was slightly degraded. The crystalline SiC-based materials tested in this study exhibited thermal conductivity degradation after irradiation, presumably caused by the presence of irradiation-induced defects. Irradiation-induced conductivity degradation was greater at lower temperatures, and was typically more pronounced for materials with higher unirradiated conductivity. Annealing the irradiated specimens for one hour at 150 C above the irradiation temperature produced an increase in thermal conductivity, which is likely the result of interstitial-vacancy pair recombination. Multiple post-irradiation anneals on CVD β-SiC indicated that a portion of the irradiation-induced damage was permanent. A possible explanation for this phenomenon was the formation of stable dislocation loops at the high irradiation temperature and/or high dose that prevented subsequent interstitial/vacancy recombination

  11. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    International Nuclear Information System (INIS)

    Hamid Vishkasougheh, Mehdi; Tunaboylu, Bahadir

    2014-01-01

    Highlights: • An Li-ion battery based stand-alone a-Si PV was designed. The system composed of three a-Si panels with an efficiency of 7% and 40 cells of LFP batteries. • Effects of solar radiation and environmental temperature for three cities, Istanbul, Ankara, and Adana, have been investigated on a-Si panels. • Using transition formulas BSPV outputs are predictable for any location out of standard test condition. - Abstract: The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a

  12. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    Energy Technology Data Exchange (ETDEWEB)

    Hamid Vishkasougheh, Mehdi, E-mail: mehdi.hamid2@gmail.com [Istanbul Sehir University, Kubakisi Caddesi, No: 27, Altunizade, Uskudar, Istanbul 34662 (Turkey); Tunaboylu, Bahadir [Istanbul Sehir University, Kubakisi Caddesi, No: 27, Altunizade, Uskudar, Istanbul 34662 (Turkey); Marmara Research Center, Materials Institute, PO Box 21, Gebze, Kocaeli 41470 (Turkey)

    2014-11-01

    Highlights: • An Li-ion battery based stand-alone a-Si PV was designed. The system composed of three a-Si panels with an efficiency of 7% and 40 cells of LFP batteries. • Effects of solar radiation and environmental temperature for three cities, Istanbul, Ankara, and Adana, have been investigated on a-Si panels. • Using transition formulas BSPV outputs are predictable for any location out of standard test condition. - Abstract: The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a

  13. Bimetallic CoNiSx nanocrystallites embedded in nitrogen-doped carbon anchored on reduced graphene oxide for high-performance supercapacitors.

    Science.gov (United States)

    Chen, Qidi; Miao, Jinkang; Quan, Liang; Cai, Daoping; Zhan, Hongbing

    2018-02-22

    Exploring high-performance and low-priced electrode materials for supercapacitors is important but remains challenging. In this work, a unique sandwich-like nanocomposite of reduced graphene oxide (rGO)-supported N-doped carbon embedded with ultrasmall CoNiS x nanocrystallites (rGO/CoNiS x /N-C nanocomposite) has been successfully designed and synthesized by a simple one-step carbonization/sulfurization treatment of the rGO/Co-Ni precursor. The intriguing structural/compositional/morphological advantages endow the as-synthesized rGO/CoNiS x /N-C nanocomposite with excellent electrochemical performance as an advanced electrode material for supercapacitors. Compared with the other two rGO/CoNiO x and rGO/CoNiS x nanocomposites, the rGO/CoNiS x /N-C nanocomposite exhibits much enhanced performance, including a high specific capacitance (1028.2 F g -1 at 1 A g -1 ), excellent rate capability (89.3% capacitance retention at 10 A g -1 ) and good cycling stability (93.6% capacitance retention over 2000 cycles). In addition, an asymmetric supercapacitor (ASC) device based on the rGO/CoNiS x /N-C nanocomposite as the cathode and activated carbon (AC) as the anode is also fabricated, which can deliver a high energy density of 32.9 W h kg -1 at a power density of 229.2 W kg -1 with desirable cycling stability. These electrochemical results evidently indicate the great potential of the sandwich-like rGO/CoNiS x /N-C nanocomposite for applications in high-performance supercapacitors.

  14. Use of a cobalt-based metallic glass for joining MoSi{sub 2} to stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Vaidya, R.U.; Rangaswamy, P.; Misra, A.; Gallegos, D.E.; Castro, R.G.; Petrovic, J.J. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.; Butt, D.P. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering

    2002-07-01

    The successful use of a cobalt-based metallic glass in joining molybdenum disilicide (MoSi{sub 2}) to stainless steel 316L was demonstrated. Such joints are being investigated for sensor tube applications in glass melting operations. The cobalt-based metallic-glass (METGLAS{sup TM} 2714A) was found to wet the MoSi{sub 2} and stainless steel surfaces and provide high quality joints. Joining was completed at 1050 C for 60 minutes in two different ways; either by feeding excess braze into the braze gap upon heating or by constraining the MoSi{sub 2}/stainless steel assembly with an alumina (Al{sub 2}O{sub 3}) fixture during the heating cycle. These steps were necessary to ensure the production of a high quality void free joint. Post-brazing metallographic evaluations coupled with quantitative elemental analysis indicated the presence of a Co-Cr-Si ternary phase with CoSi and CoSi{sub 2} precipitates within the braze. The residual stresses in these molybdenum disilicide (MoSi{sub 2})/stainless steel 316 L joints were evaluated using X-ray diffraction and instrumented indentation techniques. These measurements revealed that significant differences are induced in the residual stresses in MoSi{sub 2} and stainless steel depending on the joining technique employed. Push-out tests were carried out on these joints to evaluate the joint strength. (orig.)

  15. TM grating coupler on low-loss LPCVD based Si3N4 waveguide platform

    Science.gov (United States)

    Dabos, G.; Manolis, A.; Giesecke, A. L.; Porschatis, C.; Chmielak, B.; Wahlbrink, T.; Pleros, N.; Tsiokos, D.

    2017-12-01

    We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 waveguides have been fabricated by optical projection lithography using an i-line stepper tool enabling low-cost and mass manufacturing of photonic-integrated-circuits.

  16. SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

    Science.gov (United States)

    Shikunov, S. L.; Kurlov, V. N.

    2017-12-01

    We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

  17. Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

    Science.gov (United States)

    Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

    2017-03-01

    GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

  18. Fabrication of large-pore mesoporous Ca-Si-based bioceramics for bone regeneration

    Directory of Open Access Journals (Sweden)

    Zeng D

    2017-11-01

    Full Text Available Deliang Zeng,1,2 Xingdi Zhang,3 Xiao Wang,1,2 Lingyan Cao,1 Ao Zheng,1,2 Jiahui Du,1,2 Yongsheng Li,3 Qingfeng Huang,1 Xinquan Jiang1,2 1Department of Prosthodontics, School of Medicine, Ninth People’s Hospital affiliated to Shanghai Jiao Tong University, Shanghai, People’s Republic of China; 2Oral Bioengineering Laboratory, Shanghai Research Institute of Stomatology, School of Medicine, Ninth People’s Hospital Affiliated to Shanghai Jiao Tong University, Shanghai, People’s Republic of China; 3Laboratory of Low-Dimensional Materials Chemistry, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, People’s Republic of China Abstract: Our previous study revealed that mesoporous Ca-Si-based materials exhibited excellent osteoconduction because dissolved ions could form a layer of hydroxycarbonate apatite on the surface of the materials. However, the biological mechanisms underlying bone regeneration were largely unknown. The main aim of this study was to evaluate the osteogenic ability of large-pore mesoporous Ca-Si-based bioceramics (LPMSCs by alkaline phosphatase assay, real-time PCR analysis, von Kossa, and alizarin red assay. Compared with large-pore mesoporous silica (LPMS, LPMSCs had a better effect on the osteogenic differentiation of dental pulp cells. LPMSC-2 and LPMSC-3 with higher calcium possessed better osteogenic abilities than LPMSC-1, which may be related to the calcium-sensing receptor pathway. Furthermore, the loading capacity for recombinant human platelet-derived growth factor-BB was satisfactory in LPMSCs. In vivo, the areas of new bone formation in the calvarial defect repair were increased in the LPMSC-2 and LPMSC-3 groups compared with the LPMSC-1 and LPMS groups. We concluded that LPMSC-2 and LPMSC-3 possessed both excellent osteogenic abilities and satisfactory loading capacities, which may be

  19. Prototype tokamak fusion reactor based on SiC/SiC composite material focusing on easy maintenance

    International Nuclear Information System (INIS)

    Nishio, S.; Ueda, S.; Kurihara, R.; Kuroda, T.; Miura, H.; Sako, K.; Takase, H.; Seki, Y.; Adachi, J.; Yamazaki, S.; Hashimoto, T.; Mori, S.; Shinya, K.; Murakami, Y.; Senda, I.; Okano, K.; Asaoka, Y.; Yoshida, T.

    2000-01-01

    If the major part of the electric power demand is to be supplied by tokamak fusion power plants, the tokamak reactor must have an ultimate goal, i.e. must be excellent in construction cost, safety aspect and operational availability (maintainability and reliability), simultaneously. On way to the ultimate goal, the approach focusing on the safety and the availability (including reliability and maintainability) issues must be the more promising strategy. The tokamak reactor concept with the very high aspect ratio configuration and the structural material of SiC/SiC composite is compatible with this approach, which is called the DRastically Easy Maintenance (DREAM) approach. This is because SiC/SiC composite is a low activation material and an insulation material, and the high aspect ratio configuration leads to a good accessibility for the maintenance machines. As the intermediate steps along this strategy between the experimental reactor such as international thermonuclear experimental reactor (ITER) and the ultimate goal, a prototype reactor and an initial phase commercial reactor have been investigated. Especially for the prototype reactor, the material and technological immaturities are considered. The major features of the prototype and commercial type reactors are as follows. The fusion powers of the prototype and the commercial type are 1.5 and 5.5 GW, respectively. The major/minor radii for the prototype and the commercial type are of 12/1.5 m and 16/2 m, respectively. The plasma currents for the prototype and the commercial type are 6 and 9.2 MA, respectively. The coolant is helium gas, and the inlet/outlet temperatures of 500/800 and 600/900 deg. C for the prototype and the commercial type, respectively. The thermal efficiencies of 42 and 50% are obtainable in the prototype and the commercial type, respectively. The maximum toroidal field strengths of 18 and 20 tesla are assumed in the prototype and the commercial type, respectively. The thermal

  20. Influence of annealing temperature on structural and optical properties of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder

    Energy Technology Data Exchange (ETDEWEB)

    Ahlawat, Rachna, E-mail: rachnaahlawat2003@yahoo.com

    2015-07-25

    Highlights: • Sol–gel process is used to obtain spherical nanocrystallites of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder. • Effect of four steps annealing is studied on micro strain, nanocrystallite size and dislocation density. • Optical properties are examined by absorption spectra and PL. • SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] binary oxides are promising materials for high temperature structural applications. - Abstract: SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder were prepared by wet chemical technique and the prepared binary oxides annealed at 500 °C and 900 °C. The crystalline structure, phase transformation, and surface morphologies of as-prepared and annealed samples were investigated by XRD and TEM. The normal transmission was measured using FTIR spectroscopy. Optical properties have been studied with UV–Vis spectroscopy and PL study. XRD results shows that the as prepared samples of SiO{sub 2}:RE{sub 2}O{sub 3} [RE = Y, Gd] powder has mixed phases of RE(NO{sub 3}){sub 3} and Si(OH){sub 3}. However, cubic rare earth oxide phase alone is found for annealed samples. The strain values are calculated from W–H plot for annealed samples. TEM micrograph shows that the samples are composed of individual spherical nanocrystallites at 500 °C and aggregated nanocrystallites at 900 °C. From the UV–Vis spectra, it is found that the position of the absorption peak is shifted toward the higher wavelength side when annealing temperature is increased. In the PL spectra, the broad emission bands are observed between 570–600 nm and the presence of O–Si–O (silica) and metal oxide is confirmed by FTIR spectra.

  1. Disease mapping based on stochastic SIR-SI model for Dengue and Chikungunya in Malaysia

    Energy Technology Data Exchange (ETDEWEB)

    Samat, N. A.; Ma' arof, S. H. Mohd Imam [Department of Mathematics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjung Malim, Perak (Malaysia)

    2014-12-04

    This paper describes and demonstrates a method for relative risk estimation which is based on the stochastic SIR-SI vector-borne infectious disease transmission model specifically for Dengue and Chikungunya diseases in Malaysia. Firstly, the common compartmental model for vector-borne infectious disease transmission called the SIR-SI model (susceptible-infective-recovered for human populations; susceptible-infective for vector populations) is presented. This is followed by the explanations on the stochastic SIR-SI model which involve the Bayesian description. This stochastic model then is used in the relative risk formulation in order to obtain the posterior relative risk estimation. Then, this relative estimation model is demonstrated using Dengue and Chikungunya data of Malaysia. The viruses of these diseases are transmitted by the same type of female vector mosquito named Aedes Aegypti and Aedes Albopictus. Finally, the findings of the analysis of relative risk estimation for both Dengue and Chikungunya diseases are presented, compared and displayed in graphs and maps. The distribution from risk maps show the high and low risk area of Dengue and Chikungunya diseases occurrence. This map can be used as a tool for the prevention and control strategies for both diseases.

  2. Disease mapping based on stochastic SIR-SI model for Dengue and Chikungunya in Malaysia

    International Nuclear Information System (INIS)

    Samat, N. A.; Ma'arof, S. H. Mohd Imam

    2014-01-01

    This paper describes and demonstrates a method for relative risk estimation which is based on the stochastic SIR-SI vector-borne infectious disease transmission model specifically for Dengue and Chikungunya diseases in Malaysia. Firstly, the common compartmental model for vector-borne infectious disease transmission called the SIR-SI model (susceptible-infective-recovered for human populations; susceptible-infective for vector populations) is presented. This is followed by the explanations on the stochastic SIR-SI model which involve the Bayesian description. This stochastic model then is used in the relative risk formulation in order to obtain the posterior relative risk estimation. Then, this relative estimation model is demonstrated using Dengue and Chikungunya data of Malaysia. The viruses of these diseases are transmitted by the same type of female vector mosquito named Aedes Aegypti and Aedes Albopictus. Finally, the findings of the analysis of relative risk estimation for both Dengue and Chikungunya diseases are presented, compared and displayed in graphs and maps. The distribution from risk maps show the high and low risk area of Dengue and Chikungunya diseases occurrence. This map can be used as a tool for the prevention and control strategies for both diseases

  3. Add/drop filters based on SiC technology for optical interconnects

    International Nuclear Information System (INIS)

    Vieira, M; Vieira, M A; Louro, P; Fantoni, A; Silva, V

    2014-01-01

    In this paper we demonstrate an add/drop filter based on SiC technology. Tailoring of the channel bandwidth and wavelength is experimentally demonstrated. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible range. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure. Several monochromatic pulsed lights, separately or in a polychromatic mixture illuminated the device. Independent tuning of each channel is performed by steady state violet bias superimposed either from the front and back sides. Results show that, front background enhances the light-to-dark sensitivity of the long and medium wavelength channels and quench strongly the others. Back violet background has the opposite behaviour. This nonlinearity provides the possibility for selective removal or addition of wavelengths. An optoelectronic model is presented and explains the light filtering properties of the add/drop filter, under different optical bias conditions

  4. First Compton telescope prototype based on continuous LaBr3-SiPM detectors

    International Nuclear Information System (INIS)

    Llosá, G.; Cabello, J.; Callier, S.; Gillam, J.E.; Lacasta, C.; Rafecas, M.; Raux, L.; Solaz, C.; Stankova, V.; La Taille, C. de; Trovato, M.; Barrio, J.

    2013-01-01

    A first prototype of a Compton camera based on continuous scintillator crystals coupled to silicon photomultiplier (SiPM) arrays has been successfully developed and operated. The prototype is made of two detector planes. The first detector is made of a continuous 16×18×5 mm 3 LaBr 3 crystal coupled to a 16-elements SiPM array. The elements have a size of 3×3 mm 3 in a 4.5×4.05 mm 2 pitch. The second detector, selected by availability, consists of a continuous 16×18×5 mm 3 LYSO crystal coupled to a similar SiPM array. The SPIROC1 ASIC is employed in the readout electronics. Data have been taken with a 22 Na source placed at different positions and images have been reconstructed with the simulated one-pass list-mode (SOPL) algorithm. Detector development for the construction of a second prototype with three detector planes is underway. LaBr 3 crystals of 32×36 mm 2 size and 5/10 mm thickness have been acquired and tested with a PMT. The resolution obtained is 3.5% FWHM at 511 keV. Each crystal will be coupled to four MPPC arrays. Different options are being tested for the prototype readout

  5. Disease mapping based on stochastic SIR-SI model for Dengue and Chikungunya in Malaysia

    Science.gov (United States)

    Samat, N. A.; Ma'arof, S. H. Mohd Imam

    2014-12-01

    This paper describes and demonstrates a method for relative risk estimation which is based on the stochastic SIR-SI vector-borne infectious disease transmission model specifically for Dengue and Chikungunya diseases in Malaysia. Firstly, the common compartmental model for vector-borne infectious disease transmission called the SIR-SI model (susceptible-infective-recovered for human populations; susceptible-infective for vector populations) is presented. This is followed by the explanations on the stochastic SIR-SI model which involve the Bayesian description. This stochastic model then is used in the relative risk formulation in order to obtain the posterior relative risk estimation. Then, this relative estimation model is demonstrated using Dengue and Chikungunya data of Malaysia. The viruses of these diseases are transmitted by the same type of female vector mosquito named Aedes Aegypti and Aedes Albopictus. Finally, the findings of the analysis of relative risk estimation for both Dengue and Chikungunya diseases are presented, compared and displayed in graphs and maps. The distribution from risk maps show the high and low risk area of Dengue and Chikungunya diseases occurrence. This map can be used as a tool for the prevention and control strategies for both diseases.

  6. Application progress of solid 29Si, 27Al NMR in the research of cement-based materials

    International Nuclear Information System (INIS)

    Feng Chunhua; Wang Xijian; Li Dongxu

    2014-01-01

    Background: The solid-state Nuclear Magnetic Resonance (NMR) is an effective method for the research of cement-based materials. Now it focuses on using solid 29 Si and 27 Al NMR to research the hydration structure of the cement-based materials in cement chemistry. Purpose: A theoretical guidance is proposed for solid 29 Si and 27 Al NMR technology used in cement chemistry research. Methods: We reviewed the application of solid 29 Si and 27 Al NMR in the cement-based materials and analyzed the problem among the researches. Results: This paper introduced an fundamental, relevant-conditions and basic parameters of NMR, and studied the technical parameters of solid 29 Si and 27 Ai NMR together with the relationship among the hydration structure of cement based material. Moreover, this paper reviewed the related domestic and overseas achievements in the research of hydration structure of the cement-based materials using solid 29 Si and 27 Al NMR. Conclusion: There were some problems in the research on cement-based materials by technology of solid 29 Si and 27 Al NMR. NMR will promote the Hydration theory of cement-based material greatly. (authors)

  7. Evolution of Fe based intermetallic phases in Al–Si hypoeutectic casting alloys: Influence of the Si and Fe concentrations, and solidification rate

    Energy Technology Data Exchange (ETDEWEB)

    Gorny, Anton; Manickaraj, Jeyakumar [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada L8S 4L7 (Canada); Cai, Zhonghou [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Shankar, Sumanth, E-mail: shankar@mcmaster.ca [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada L8S 4L7 (Canada)

    2013-11-15

    Highlights: •Anomalous evolution of Fe based intermetallic phases in Al–Si–Fe alloys. •XRF coupled with nano-diffraction to confirm the nano-size Fe intermetallic phases. •Crystallography of the θ-Al{sub 13}Fe{sub 4}, τ{sub 5}-Al{sub 8}Fe{sub 2}Si and τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2} phases. •Peritectic reactions involving the Fe intermetallic phases in Al–Si–Fe alloys. -- Abstract: Al–Si–Fe hypoeutectic cast alloy system is very complex and reported to produce numerous Fe based intermetallic phases in conjunction with Al and Si. This publication will address the anomalies of phase evolution in the Al–Si–Fe hypoeutectic casting alloy system; the anomaly lies in the peculiarities in the evolution and nature of the intermetallic phases when compared to the thermodynamic phase diagram predictions and past publications of the same. The influence of the following parameters, in various combinations, on the evolution and nature of the intermetallic phases were analyzed and reported: concentration of Si between 2 and 12.6 wt%, Fe between 0.05 and 0.5 wt% and solidification rates of 0.1, 1, 5 and 50 K s{sup −1}. Two intermetallic phases are observed to evolve in these alloys under these solidification conditions: the τ{sub 5}-Al{sub 8}SiFe{sub 2} and τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2}. The τ{sub 5}-Al{sub 8}SiFe{sub 2} phase evolves at all levels of the parameters during solidification and subsequently transforms into the τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2} through a peritectic reaction when promoted by certain combinations of solidification parameters such as higher Fe level, lower Si level and slower solidification rates. Further, it is also hypothesized from experimental evidences that the θ-Al{sub 13}Fe{sub 4} binary phase precludes the evolution of the τ{sub 5} during solidification and subsequently transforms into the τ{sub 6} phase during solidification. These observations are anomalous to the publications as prior art and

  8. Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties

    International Nuclear Information System (INIS)

    Woerdenweber, J.; Schmitz, R.; Mueck, A.; Zastrow, U.; Niessen, L.; Gordijn, A.; Carius, R.; Beyer, W.; Rau, U.; Merdzhanova, T.; Stiebig, H.

    2008-01-01

    The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10 -4 Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si:H absorber layer exists critical oxygen and nitrogen contamination levels (about 2x10 19 atoms/cm 3 and 4x10 18 atoms/cm 3 , respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is found to depend little on the applied deposition regime. By enhancing, for example, the flow of process gases, a higher base pressure (and leak rate) can be tolerated before reaching the critical contamination level. The electrical properties of the corresponding films show that increasing oxygen and nitrogen contamination results in an increase in dark conductivity and photoconductivity, while activation energy and photosensitivity are decreased. These effects are attributed to nitrogen and oxygen induced donor states, which cause a shift of the Fermi level toward the conduction band and presumably deteriorate the built-in electric field in the solar cells. Higher doping efficiencies are observed for nitrogen compared to oxygen. Alloying effects (formation of SiO x ) are observed for oxygen contaminations above 10 20 atoms/cm 3 , leading to an increase in the band gap

  9. Shape memory and pseudoelastic properties of Fe-Mn-Si and Ti-Ni based alloys

    International Nuclear Information System (INIS)

    Guenin, G.

    1997-01-01

    The aim of this presentation is to analyse and discuss some recent advances in shape memory and pseudoelastic properties of different alloys. Experimental work in connection with theoretical ones will be reviewed. The first part is devoted to the microstructural origin of shape memory properties of Fe-Mn-Si based alloys (γ-ε transformation); the second part is a synthetic analysis of the effects of thermomechanical treatments on shape memory and pseudoelastic effects in Ti-Ni alloys, with some focus on the behaviour of the R phase introduced. (orig.)

  10. Variable-energy positron annihilation study of subnanopores in SiOCH-based PECVD films

    International Nuclear Information System (INIS)

    Ito, Kenji; Oka, Toshitaka; Kobayashi, Yoshinori; Suzuki, Ryoichi; Ohdaira, Toshiyuki

    2007-01-01

    Subnanoporosity was introduced into SiOCH-based thin films by mixing tetraethyl orthosilicate with hexamethyldisiloxane (HMDSO) in the plasma enhanced chemical vapor deposition process, and was evaluated by the variable-energy positron annihilation lifetime technique. It was found that with increasing the HMDSO fraction both porosity and pore size were enhanced, as evidenced by the decreased refractive index and increased ortho-positronium lifetime. The lifetimes from 2.0 to 6.8 ns suggested the tunable pore volumes within a range of 0.1-0.7 nm 3

  11. Strength and corrosion behavior of SiC - based ceramics in hot coal combustion environments

    Energy Technology Data Exchange (ETDEWEB)

    Breder, K.; Parten, R.J. [Oak Ridge National Lab., TN (United States)

    1996-08-01

    As part of an effort to evaluate the use of advanced ceramics in a new generation of coal-fired power plants, four SiC-based ceramics have been exposed to corrosive coal slag in a laboratory furnace and two pilot scale combustors. Initial results indicate that the laboratory experiments are valuable additions to more expensive pilot plant experiments. The results show increased corrosive attack with increased temperature, and that only slight changes in temperature may significantly alter the degree of strength degradation due to corrosive attack. The present results are part of a larger experimental matrix evaluating the behavior of ceramics in the coal combustion environment.

  12. K-capture by Al-Si based Additives in an Entrained Flow Reactor

    DEFF Research Database (Denmark)

    Wang, Guoliang; Jensen, Peter Arendt; Wu, Hao

    2016-01-01

    A water slurry, consisting of KCl and Al-Si based additives (kaolin and coal fly ash) was fed into an entrained flow reactor (EFR) to study the K-capturing reaction of the additives at suspension-fired conditions. Solid products collected from the reactor were analysed with respect to total...... of KCl to K-aluminosilicate decreased. When reaction temperature increased from 1100 °C to 1450 °C, the conversion of KCl does not change significantly, which differs from the trend observed in fixed-bed reactor....

  13. Measurement of the time resolution of small SiPM-based scintillation counters

    Science.gov (United States)

    Kravchenko, E. A.; Porosev, V. V.; Savinov, G. A.

    2017-12-01

    In this research, we evaluated the timing resolution of SiPM-based scintillation detector on a 1-GeV electron beam "extracted" from VEPP-4M. We tested small scintillation crystals of pure CsI, YAP, LYSO, and LFS-3 with HAMAMATSU S10362-33-025C and S13360-3050CS. The CsI scintillator together with HAMAMATSU S13360-3050CS demonstrated the best results. Nevertheless, the achieved time resolution of ~80 ps (RMS) relates mainly to the photodetector itself. It makes the silicon photomultiplier an attractive candidate to replace other devices in applications where sub-nanosecond accuracy is required.

  14. Detector block based on arrays of 144 SiPMs and monolithic scintillators: A performance study

    International Nuclear Information System (INIS)

    González, A.J.; Conde, P.; Iborra, A.; Aguilar, A.; Bellido, P.; García-Olcina, R.; Hernández, L.; Moliner, L.; Rigla, J.P.; Rodríguez-Álvarez, M.J.; Sánchez, F.; Seimetz, M.; Soriano, A.; Torres, J.; Vidal, L.F.; Benlloch, J.M.

    2015-01-01

    We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12×12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured

  15. Solar cells based on InP/GaP/Si structure

    Science.gov (United States)

    Kvitsiani, O.; Laperashvil, D.; Laperashvili, T.; Mikelashvili, V.

    2016-10-01

    Solar cells (SCs) based on III-V semiconductors are reviewed. Presented work emphases on the Solar Cells containing Quantum Dots (QDs) for next-generation photovoltaics. In this work the method of fabrication of InP QDs on III-V semiconductors is investigated. The original method of electrochemical deposition of metals: indium (In), gallium (Ga) and of alloys (InGa) on the surface of gallium phosphide (GaP), and mechanism of formation of InP QDs on GaP surface is presented. The possibilities of application of InP/GaP/Si structure as SC are discussed, and the challenges arising is also considered.

  16. Si Substrate-Based Meta materials for Ultra broadband Perfect Absorption in Visible Regime

    International Nuclear Information System (INIS)

    Han, Q.; Jin, L.; Fu, Y.; Yu, W.; Yu, W.

    2014-01-01

    We report the broadband efficient light absorbing property of a structure of quadrangular frustum pyramid array in visible regime. The structure can absorb light efficiently with an average absorptivity of 0.98 over the whole visible waveband. In addition, it is found that this kind of super light absorbing can maintain an average of 0.9 for a wide incident angle range. The perfect absorbing property of the meta material-based nano ring array is attributed to the effect of the Fabry-Perot resonance. The structure is possible to be used as a type of Si photonics devices in future photonic circuits

  17. An albumin-mediated cholesterol design-based strategy for tuning siRNA pharmacokinetics and gene silencing.

    Science.gov (United States)

    Bienk, Konrad; Hvam, Michael Lykke; Pakula, Malgorzata Maria; Dagnæs-Hansen, Frederik; Wengel, Jesper; Malle, Birgitte Mølholm; Kragh-Hansen, Ulrich; Cameron, Jason; Bukrinski, Jens Thostrup; Howard, Kenneth A

    2016-06-28

    Major challenges for the clinical translation of small interfering RNA (siRNA) include overcoming the poor plasma half-life, site-specific delivery and modulation of gene silencing. In this work, we exploit the intrinsic transport properties of human serum albumin to tune the blood circulatory half-life, hepatic accumulation and gene silencing; based on the number of siRNA cholesteryl modifications. We demonstrate by a gel shift assay a strong and specific affinity of recombinant human serum albumin (rHSA) towards cholesteryl-modified siRNA (Kd>1×10(-7)M) dependent on number of modifications. The rHSA/siRNA complex exhibited reduced nuclease degradation and reduced induction of TNF-α production by human peripheral blood mononuclear cells. The increased solubility of heavily cholesteryl modified siRNA in the presence of rHSA facilitated duplex annealing and consequent interaction that allowed in vivo studies using multiple cholesteryl modifications. A structural-activity-based screen of in vitro EGFP-silencing was used to select optimal siRNA designs containing cholesteryl modifications within the sense strand that were used for in vivo studies. We demonstrate plasma half-life extension in NMRI mice from t1/2 12min (naked) to t1/2 45min (single cholesteryl) and t1/2 71min (double cholesteryl) using fluorescent live bioimaging. The biodistribution showed increased accumulation in the liver for the double cholesteryl modified siRNA that correlated with an increase in hepatic Factor VII gene silencing of 28% (rHSA/siRNA) compared to 4% (naked siRNA) 6days post-injection. This work presents a novel albumin-mediated cholesteryl design-based strategy for tuning pharmacokinetics and systemic gene silencing. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    Science.gov (United States)

    Pinzón, Cristian; de Paz, Yanira; Bajo, Javier; Abraham, Ajith; Corchado, Juan M.

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a kind of intelligent agent, which integrates a case-based reasoning system. This agent, which is the core of the architecture, allows the application of detection techniques based on anomalies as well as those based on patterns, providing a great degree of autonomy, flexibility, robustness and dynamic scalability. The characteristics of the multiagent system allow an architecture to detect attacks from different types of devices, regardless of the physical location. The architecture has been tested on a medical database, guaranteeing safe access from various devices such as PDAs and notebook computers.

  19. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H.J.; Jaworowski, J.; Leandersson, M.; El Bouanani, M. [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B. [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J.; Westerberg, L.; Van Veldhuizen, E.J. [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1996-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  20. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H J; Jaworowski, J; Leandersson, M; El Bouanani, M [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J; Westerberg, L; Van Veldhuizen, E J [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1997-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  1. Study of Fe-Ni-Si-B alloy and films on its base by X-ray photospectroscopy method

    International Nuclear Information System (INIS)

    Kozlenko, V.G.; Parfenenok, M.A.; Pukhov, I.K.; Shaposhnikov, A.N.; Shirkov, A.V.

    1983-01-01

    By the method of X ray photoelectron spectroscopy the chemical composition of Fe-Ni-Si-B alloy and films on its base prepared by ion-plasma sputtering is investigated. The identity of chemical bonds in film samples and initial target is revealed, realized are in them mostly Fe-B, Ni-C, Si-Si interatomic bonds. It is shown that lono. films contact with atmosphere is the cause of difference of film composition in the near-surface region (up to 100 nm) from its main volume composition

  2. Crack-free AlGaN-based UV LED on Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, P.; Dadgar, A.; Blaesing, J.; Witte, H.; Mueller, M.; Guenther, K.M.; Fey, T.; Bastek, B.; Bertram, F.; Kurnatowski, M. von; Wieneke, M.; Hempel, T.; Veit, P.; Clos, R.; Christen, J.; Krost, A. [FNW/IEP/AHE Otto-von-Guericke-Universitaet Magdeburg (Germany)

    2010-07-01

    To achieve low-cost UV LEDs on large-diameter substrates it is a very interesting approach to grow AlGaN on low-cost Si substrates. Here, AlGaN layers and AlGaN LED structures grown on Si(111) were additionally monitored by in-situ curvature measurements. They show that with the insertion of AlN-based SL buffer layers and LT-AlN interlayers, the AlGaN layers are under compressive stress during growth enabling to compensate tensile stress after cooling. To characterize the crystalline quality, HR-XRD measurements were performed. Cross-sectional TEM to investigate dislocation propagation and annihilation. n- and p- conductivities were achieved by Si and Mg doping of the layers, respectively. By C-V and Hall-effect measurements, the maximum free-electron concentration of 2.6{sup +18} cm{sup -3} and free-hole concentration of 2.4{sup +17} cm{sup -3} by using a structure of Mg-doped GaN/Al{sub 0.1}Ga{sub 0.9}N multilayers for the latter were determined. A GaN/Al{sub 0.1}Ga{sub 0.9}N MQW structure showed near UV-luminescence around 350-360 nm. The optical and electrical properties of AlGaN-based LED samples were further characterized by I-V, EL, PL and CL measurements. The I-V measurements show forward-diode characteristics with turn-on voltage about 2.6-3.1 V.

  3. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  4. Preparation of Microkernel-Based Mesoporous (SiO2-CdTe-SiO2)@SiO2 Fluorescent Nanoparticles for Imaging Screening and Enrichment of Heat Shock Protein 90 Inhibitors from Tripterygium Wilfordii.

    Science.gov (United States)

    Hu, Yue; Miao, Zhao-Yi; Zhang, Xiao-Jing; Yang, Xiao-Tong; Tang, Ying-Ying; Yu, Sheng; Shan, Chen-Xiao; Wen, Hong-Mei; Zhu, Dong

    2018-05-01

    The currently utilized ligand fishing for bioactive molecular screening from complex matrixes cannot perform imaging screening. Here, we developed a new solid-phase ligand fishing coupled with an in situ imaging protocol for the specific enrichment and identification of heat shock protein 90 (Hsp 90) inhibitors from Tripterygium wilfordii, utilizing a multiple-layer and microkernel-based mesoporous nanostructure composed of a protective silica coating CdTe quantum dot (QD) core and a mesoporous silica shell, i.e., microkernel-based mesoporous (SiO 2 -CdTe-SiO 2 )@SiO 2 fluorescent nanoparticles (MMFNPs) as extracting carries and fluorescent probes. The prepared MMFNPs showed a highly uniform spherical morphology, retention of fluorescence emission, and great chemical stability. The fished ligands by Hsp 90α-MMFNPs were evaluated via the preliminary bioactivity based on real-time cellular morphology imaging by confocal laser scanning microscopy (CLSM) and then identified by mass spectrometry (MS). Celastrol was successfully isolated as an Hsp 90 inhibitor, and two other specific components screened by Hsp 90α-MMFNPs, i.e., demecolcine and wilforine, were preliminarily identified as potential Hsp 90 inhibitors through the verification of strong affinity to Hsp 90 and antitumor bioactivity. The approach based on the MMFNPs provides a strong platform for imaging screening and discovery of plant-derived biologically active molecules with high efficiency and selectivity.

  5. Development of a composite large-size SiPM (assembled matrix) based modular detector cluster for MAGIC

    Science.gov (United States)

    Hahn, A.; Mazin, D.; Bangale, P.; Dettlaff, A.; Fink, D.; Grundner, F.; Haberer, W.; Maier, R.; Mirzoyan, R.; Podkladkin, S.; Teshima, M.; Wetteskind, H.

    2017-02-01

    The MAGIC collaboration operates two 17 m diameter Imaging Atmospheric Cherenkov Telescopes (IACTs) on the Canary Island of La Palma. Each of the two telescopes is currently equipped with a photomultiplier tube (PMT) based imaging camera. Due to the advances in the development of Silicon Photomultipliers (SiPMs), they are becoming a widely used alternative to PMTs in many research fields including gamma-ray astronomy. Within the Otto-Hahn group at the Max Planck Institute for Physics, Munich, we are developing a SiPM based detector module for a possible upgrade of the MAGIC cameras and also for future experiments as, e.g., the Large Size Telescopes (LST) of the Cherenkov Telescope Array (CTA). Because of the small size of individual SiPM sensors (6 mm×6 mm) with respect to the 1-inch diameter PMTs currently used in MAGIC, we use a custom-made matrix of SiPMs to cover the same detection area. We developed an electronic circuit to actively sum up and amplify the SiPM signals. Existing non-imaging hexagonal light concentrators (Winston cones) used in MAGIC have been modified for the angular acceptance of the SiPMs by using C++ based ray tracing simulations. The first prototype based detector module includes seven channels and was installed into the MAGIC camera in May 2015. We present the results of the first prototype and its performance as well as the status of the project and discuss its challenges.

  6. High ink absorption performance of inkjet printing based on SiO2@Al13 core-shell composites

    Science.gov (United States)

    Chen, YiFan; Jiang, Bo; Liu, Li; Du, Yunzhe; Zhang, Tong; Zhao, LiWei; Huang, YuDong

    2018-04-01

    The increasing growth of the inkjet market makes the inkjet printing more necessary. A composite material based on core-shell structure has been developed and applied to prepare inkjet printing layer. In this contribution, the ink printing record layers based on SiO2@Al13 core-shell composite was elaborated. The prepared core-shell composite materials were characterized by X-ray photoelectron spectroscopy (XPS), zeta potential, X-ray diffraction (XRD), scanning electron microscopy (SEM). The results proved the presence of electrostatic adsorption between SiO2 molecules and Al13 molecules with the formation of the well-dispersed system. In addition, based on the adsorption and the liquid permeability analysis, SiO2@Al13 ink printing record layer achieved a relatively high ink uptake (2.5 gmm-1) and permeability (87%), respectively. The smoothness and glossiness of SiO2@Al13 record layers were higher than SiO2 record layers. The core-shell structure facilitated the dispersion of the silica, thereby improved its ink absorption performance and made the clear printed image. Thus, the proposed procedure based on SiO2@Al13 core-shell structure of dye particles could be applied as a promising strategy for inkjet printing.

  7. Stability of charge and orbital order in half-doped Y{sub 0.5}Ca{sub 0.5}MnO{sub 3} nanocrystallites

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Putul Malla, E-mail: putularun@gmail.com; Ghosh, Barnali, E-mail: barnali@bose.res.in; Raychaudhuri, A. K., E-mail: arup@bose.res.in [S N Bose National Centre for Basic Sciences, Unit for Nano Science, Department of Condensed Matter Physics and Materials Science (India); Kaushik, S. D.; Siruguri, V. [UGC-DAE Consortium for Scientific Research Mumbai Centre, R-5 Shed, Bhabha Atomic Research Centre (India)

    2013-04-15

    In this paper, we report a detailed study of the structure, magnetic, and electrical transport properties in nanocrystallites of hole-doped manganite Y{sub 0.5}Ca{sub 0.5}MnO{sub 3}, with the aim to study the effect of size reduction on the stability of the charge-orbital order and the antiferromagnetic spin order that are seen in the bulk samples of the half-doped manganite. The investigations have been done in the general context of investigating how size reduction affects competing interactions in complex oxides and thus, changes their ground state. The bulk sample of the material (average crystallite size {approx}1 {mu}m), with the smallest radius of the cation in A-site (Y), shows a robust charge and orbital ordered insulating state below the transition temperature near 290 K and an antiferromagnetic spin order at 110 K. The experiments carried out on well-characterized nanocrystalline samples, with average crystallite sizes down to 75 nm, establish that the size reduction changes the structural parameters, and the charge and orbital ordering are suppressed. However, the antiferromagnetic spin order (as revealed by neutron diffraction experiments carried out down to 2 K) persists in the nanocrystallites and co-exists with ferromagnetic order below 110 K. The nanocrystalline samples have significant lower resistivities (by few orders) compared to those of the bulk samples in the temperature range 10-300 K. This corroborates the formation of the ferromagnetic moments in the nanocrystallites.

  8. Preparation and characterization of palladium nano-crystallite decorated TiO₂ nano-tubes photoelectrode and its enhanced photocatalytic efficiency for degradation of diclofenac.

    Science.gov (United States)

    Cheng, Xiuwen; Liu, Huiling; Chen, Qinghua; Li, Junjing; Wang, Pu

    2013-06-15

    TiO2 has been considered as a versatile candidate for the photoelectrochemical (PECH) application. In this study, Pd nano-crystallite decorated TiO₂ nano-tubes (Pd/TNTs) photoelectrode was prepared through electrochemical deposition. The resulting Pd/TNTs samples were characterized by SEM, XRD, DRS and XPS. It was found that the decorated Pd nano-crystallite existed in the form of Pd(0) with an average diameter of 30 nm, and could improve the light absorption in visible region. In addition, PECH properties of Pd/TNTs photoanode were investigated through transient open circuit potential, photocurrent response, electro-chemical impedance spectroscopy (EIS) and Mott-Schottky analysis. Moreover, the generation rate of hydroxyl radicals (•OH) was detected by a photoluminescence (PL) spectra using terephthalic acid (TA) as a probe molecule. Results showed that Pd/TNTs photoelectrode exhibited high transient photoinduced current of 0.094 mA cm(-2), open circuit photovoltage of -0.339 mV cm(-2) and effective photoelectrocatalytic (PEC) efficiency of 67.7% (0.4V vs. SCE) for the degradation of diclofenac (DCF). The high PC and PEC efficiency could mainly be attributed to the decoration of Pd nano-crystallite which could provide pathway for the transfer of photoinduced charge carriers. Furthermore, the contribution of series of active species was applied to clarify the enhanced PC mechanism. Copyright © 2013 Elsevier B.V. All rights reserved.

  9. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    Science.gov (United States)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  10. Development of a composite large-size SiPM (assembled matrix) based modular detector cluster for MAGIC

    Energy Technology Data Exchange (ETDEWEB)

    Hahn, A., E-mail: ahahn@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Mazin, D., E-mail: mazin@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Institute for Cosmic Ray Research, The University of Tokyo, 5-1-5 Kashiwa-no-Ha, Kashiwa City, Chiba 277–8582 (Japan); Bangale, P., E-mail: priya@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Dettlaff, A., E-mail: todettl@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Fink, D., E-mail: fink@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Grundner, F., E-mail: grundner@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Haberer, W., E-mail: haberer@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Maier, R., E-mail: rma@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); and others

    2017-02-11

    The MAGIC collaboration operates two 17 m diameter Imaging Atmospheric Cherenkov Telescopes (IACTs) on the Canary Island of La Palma. Each of the two telescopes is currently equipped with a photomultiplier tube (PMT) based imaging camera. Due to the advances in the development of Silicon Photomultipliers (SiPMs), they are becoming a widely used alternative to PMTs in many research fields including gamma-ray astronomy. Within the Otto-Hahn group at the Max Planck Institute for Physics, Munich, we are developing a SiPM based detector module for a possible upgrade of the MAGIC cameras and also for future experiments as, e.g., the Large Size Telescopes (LST) of the Cherenkov Telescope Array (CTA). Because of the small size of individual SiPM sensors (6 mm×6 mm) with respect to the 1-inch diameter PMTs currently used in MAGIC, we use a custom-made matrix of SiPMs to cover the same detection area. We developed an electronic circuit to actively sum up and amplify the SiPM signals. Existing non-imaging hexagonal light concentrators (Winston cones) used in MAGIC have been modified for the angular acceptance of the SiPMs by using C++ based ray tracing simulations. The first prototype based detector module includes seven channels and was installed into the MAGIC camera in May 2015. We present the results of the first prototype and its performance as well as the status of the project and discuss its challenges. - Highlights: • The design of the first SiPM large-size IACT pixel is described. • The simulation of the light concentrators is presented. • The temperature stability of the detector module is demonstrated. • The calibration procedure of SiPM device in the field is described.

  11. Corrosion behaviour of Fe-Mn-Si based shape memory steels trained by cold rolling

    International Nuclear Information System (INIS)

    Soederberg, O.; Liu, X.W.; Ullakko, K.; Lindroos, V.K.

    1999-01-01

    Fe-Mn-Si based high nitrogen steels have been studied in recent years for potential industrial applications. These steels show good shape memory properties, high strength and excellent ductility. In the present study, the effects of training history on the corrosion properties of Fe-Mn-Si-Cr-Ni based high nitrogen steels were investigated. The corrosion behaviour of shape memory alloys was analyzed by implementing anodic polarisation measurements and immersion tests. The shape memory steels in annealed, deformed and recovered conditions were studied to examine the training effect on their corrosion behaviour. The features of the anodic polarisation curves indicated a general corrosion type of these steels. The experimental results showed that Cr and Mn had a marked influence on the corrosion behaviour of the steels, followed by Ni, N and V. It was also apparent that the deformation during the shape memory training by cold rolling decreased the corrosion stability, and the recovery heating reduced further their corrosion resistance. However, further studies are needed in order to better understand the corrosion behaviour of the investigated alloys. (orig.)

  12. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

    Science.gov (United States)

    Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

    2016-11-01

    2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. A fully integrated optical detector with a-Si:H based color photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Watty, Krystian; Merfort, Christian; Seibel, Konstantin; Schoeler, Lars; Boehm, Markus [Institute for Microsystem Technologies (IMT), University of Siegen, Hoelderlinstr. 3, 57076 Siegen (Germany)

    2010-03-15

    The fabrication of an electrophoresis separation microchip with monolithic integrated excitation light source and variospectral photodiodes for absorption detection is presented in this paper. Microchip based separation techniques are essential elements in the development of fully integrated micro-total analysis systems ({mu}-TAS). An integrated microfluidic device, like an application specific lab-on-microchip (ALM) (Seibel et al., in: MRS Spring Meeting, San Francisco, USA, 2005 1), includes all components, necessary to perform a chemical analysis on chip and it can be used as a stand-alone unit directly at the point of sampling. Variospectral diodes based on hydrogenated amorphous silicon (a-Si:H) technology allow for advanced optical detection schemes, because the spectral sensitivity of the devices can be tailored to fit the emission of specific fluorescent markers. Important features of a-Si:H variospectral photodiodes are a high dynamic range, a bias-tunable spectral sensitivity and a very good linearity for the separation of mixed color signals. Principle of ALM device. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Shape recovery characteristics of biaxially prestrained Fe-Mn-Si-based shape memory alloy

    International Nuclear Information System (INIS)

    Wada, M.; Naoi, H.; Yasuda, H.; Maruyama, T.

    2008-01-01

    Fe-Mn-Si-based shape memory alloy has already been used practically for steel pipe joints. In most of the applications including the steel pipe joints, it is possible to estimate the reduction of diameter from the experimental data of the shape recovery after uniaxial stretching of the alloy materials. However, studies on shape recovery effects after biaxial stretching are important for the extensive applications of the alloy. In this study, we investigated the shape recovery strain after uniaxial and biaxial stretching and the microstructures of the alloy in order to see the effects of uniaxial and biaxial prestrain on the stress-induced martensitic transformation. Amounts of shape recovery strain in the biaxially prestrained specimens are smaller than those in the uniaxially prestrained specimens. Transmission electron microscopy revealed that reverse transformations of stress-induced martensitic ε-phase are prevented by slip bands formed at the same time in the biaxially prestrained specimens, but not in the uniaxially prestrained specimens. The technological data and interpretations presented in this study should be useful in forming design guidelines for promoting the extensive applications of Fe-Mn-Si-based shape memory alloy

  15. Description of hypoeutectic Al-Si-Cu alloys based on their known chemical compositions

    Directory of Open Access Journals (Sweden)

    Djurdjevic, M. B.

    2013-10-01

    Full Text Available The modeling of casting processes has remained a topic of active interest for several decades, and the availability of numerous software packages on the market is a good indication of the interest that the casting industry has in this field. Most of the data used in these software packages are directly read or estimated from the binary or multi-component phase diagrams. Unfortunately, except for binary diagrams, many of ternary or higher order phase diagrams are still not accurate enough. Having in mind that most of the aluminum binary systems are very well established, it has been tried to transfer multi-component system into one well known Al-Xi pseudo binary system (in this case the Al-Si phase diagram was chosen as a reference system. The new Silicon Equivalency (SiEQ algorithm expresses the amounts of major and minor alloying elements in the aluminum melts through an “equivalent” amount of silicon. Such a system could be used to calculate several thermo-physical and solidification characteristics of multi component as cast aluminum alloys. This provides to the model the capacity to predict the solidification characteristics of cast parts, where cooling rates are slow and the solidification process has to be known in great detail in order to avoid quality problems in the casting. This work demonstrates how the SiEQ algorithm can be used to calculate the characteristic solidification temperatures of the multicomponent Al-Si alloys as well as their latent heats and growth restriction factor. Statistical analysis of the results obtained for a wide range of alloy chemical compositions shows a very good correlation with the experimental data and the SiEQ calculations. The same mathematical approach might be applied for other metallic systems such as iron and magnesium, using carbon equivalency for ferrous systems and aluminum equivalency for magnesium multi-component alloys.La modelización de los procesos de fundición ha sido un tópico de

  16. An electrochemical methanol sensor based on a Pd-Ni/SiNWs catalytic electrode

    International Nuclear Information System (INIS)

    Tao Bairui; Zhang Jian; Hui Shichao; Chen Xuejiao; Wan Lijuan

    2010-01-01

    A novel electrochemical methanol sensor based on a catalytic electrode of palladium-nickel/silicon nanowires (Pd-Ni/SiNWs) is presented in this paper. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and electrochemical methods are employed to investigate the Pd-Ni/SiNWs electrode materials. These nanocomposite materials exhibit a highly ordered, wire-like structure with a wire length of ∼50 μm and a wire diameter ranging from 100 to 300 nm. The substrate has good electrocatalytic activity towards the oxidation of methanol in alkaline solutions. The performances of the prototype sensor are characterized by cyclic voltammetry and fixed potential amperometry techniques. In a 1 mol L -1 KOH solution containing different methanol concentrations, the sensor exhibits a good sensitivity of 1.96 mA mmol -1 L cm -2 with R 2 = 0.99 and the corresponding detection limit of 18 μmol L -1 (signal-to-noise ratio = 3, S/N = 3) for cyclic voltammetry. Meanwhile, the electrode also displays a sensitivity of 0.48 mA mmol -1 L cm -2 with R 2 = 0.98 and the corresponding detection limit of 25 μmol L -1 (S/N = 3) for a fixed potential amperometry at -0.3 V versus an Ag/AgCl reference electrode. The results demonstrate that the Pd-Ni/SiNWs catalytic electrode has potential as an efficient and integrated sensor for methanol detection.

  17. Study of Power Loss Reduction in SEPR Converters for Induction Heating through Implementation of SiC Based Semiconductor Switches

    Directory of Open Access Journals (Sweden)

    Angel Marinov

    2014-08-01

    Full Text Available This paper presents a power loss analysis for a Single Ended Parallel Resonance (SEPR Converter used for induction heating. The analysis includes a comparison of the losses in the electronic switch when the circuit is realized using a conventional Silicon (Si based IGBT or when using Silicon Carbide (SiC based MOSFET. The analysis includes modelling and simulation as well as experimental verification through power loss and heat dissipation measurement. The presented results can be used as a base of comparison between the switches and can be a starting point for efficiency based design of those types of converters.

  18. Si-based thin film coating on Y-TZP: Influence of deposition parameters on adhesion of resin cement

    Energy Technology Data Exchange (ETDEWEB)

    Queiroz, José Renato Cavalcanti, E-mail: joserenatocq@hotmail.com [Potiguar University, Department of Biotechnology, Natal (Brazil); Nogueira Junior, Lafayette [São Paulo State University, Department of Prosthodontics and Dental Materials, São José dos Campos (Brazil); Massi, Marcos [Federal University of São Paulo, Institute of Science and Technology, São José dos Campos (Brazil); Silva, Alecssandro de Moura; Bottino, Marco Antonio [São Paulo State University, Department of Prosthodontics and Dental Materials, São José dos Campos (Brazil); Sobrinho, Argemiro Soares da Silva [Technological Institute of Aeronautics, Department of Physics, São José dos Campos (Brazil); Özcan, Mutlu [University of Zurich, Dental Materials Unit, Center for Dental and Oral Medicine, Clinic for Fixed and Removable Prosthodontics and Dental Materials Science, Zurich (Switzerland)

    2013-10-01

    This study evaluated the influence of deposition parameters for Si-based thin films using magnetron sputtering for coating zirconia and subsequent adhesion of resin cement. Zirconia ceramic blocks were randomly divided into 8 groups and specimens were either ground finished and polished or conditioned using air-abrasion with alumina particles coated with silica. In the remaining groups, the polished specimens were coated with Si-based film coating with argon/oxygen magnetron discharge at 8:1 or 20:1 flux. In one group, Si-based film coating was performed on air-abraded surfaces. After application of bonding agent, resin cement was bonded. Profilometry, goniometry, Energy Dispersive X-ray Spectroscopy and Rutherford Backscattering Spectroscopy analysis were performed on the conditioned zirconia surfaces. Adhesion of resin cement to zirconia was tested using shear bond test and debonded surfaces were examined using Scanning Electron Microscopy. Si-based film coating applied on air-abraded rough zirconia surfaces increased the adhesion of the resin cement (22.78 ± 5.2 MPa) compared to those of other methods (0–14.62 MPa) (p = 0.05). Mixed type of failures were more frequent in Si film coated groups on either polished or air-abraded groups. Si-based thin films increased wettability compared to the control group but did not change the roughness, considering the parameters evaluated. Deposition parameters of Si-based thin film and after application of air-abrasion influenced the initial adhesion of resin cement to zirconia.

  19. Si-based thin film coating on Y-TZP: Influence of deposition parameters on adhesion of resin cement

    International Nuclear Information System (INIS)

    Queiroz, José Renato Cavalcanti; Nogueira Junior, Lafayette; Massi, Marcos; Silva, Alecssandro de Moura; Bottino, Marco Antonio; Sobrinho, Argemiro Soares da Silva; Özcan, Mutlu

    2013-01-01

    This study evaluated the influence of deposition parameters for Si-based thin films using magnetron sputtering for coating zirconia and subsequent adhesion of resin cement. Zirconia ceramic blocks were randomly divided into 8 groups and specimens were either ground finished and polished or conditioned using air-abrasion with alumina particles coated with silica. In the remaining groups, the polished specimens were coated with Si-based film coating with argon/oxygen magnetron discharge at 8:1 or 20:1 flux. In one group, Si-based film coating was performed on air-abraded surfaces. After application of bonding agent, resin cement was bonded. Profilometry, goniometry, Energy Dispersive X-ray Spectroscopy and Rutherford Backscattering Spectroscopy analysis were performed on the conditioned zirconia surfaces. Adhesion of resin cement to zirconia was tested using shear bond test and debonded surfaces were examined using Scanning Electron Microscopy. Si-based film coating applied on air-abraded rough zirconia surfaces increased the adhesion of the resin cement (22.78 ± 5.2 MPa) compared to those of other methods (0–14.62 MPa) (p = 0.05). Mixed type of failures were more frequent in Si film coated groups on either polished or air-abraded groups. Si-based thin films increased wettability compared to the control group but did not change the roughness, considering the parameters evaluated. Deposition parameters of Si-based thin film and after application of air-abrasion influenced the initial adhesion of resin cement to zirconia.

  20. Towards radiation hard converter material for SiC-based fast neutron detectors

    Science.gov (United States)

    Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

    2018-05-01

    efficiency of a stacked structure concept has been explored by juxtaposing several converter-detector layers to improve the efficiency of LiH-SiC-based FNDs . It is observed that approximately tenfold efficiency improvement has been achieved—0.93% for ten layers stacked configuration vis-à-vis 0.1% of single converter-detector layer configuration. Finally, stacked detectors have also been simulated for different converter thicknesses to attain the efficiency as high as ~ 3.25% with the help of 50 stacked layers.

  1. High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

    Science.gov (United States)

    Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

    2011-01-01

    In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

  2. From artefacts to atoms - A new SI for 2018 to be based on fundamental constants.

    Science.gov (United States)

    Quinn, Terry

    At the 26th General Conference on Weights and Measures (CGPM) in November 2018, it is planned to adopt a new definition of the International System of Units, SI, based on the fixed numerical values of seven defining constants, broadly the fundamental constants of physics. This will be the culmination of more than two hundred years of metrology, instantiating for the first time the original ideas of the creators of the metric system. The key is the replacement of the present definition of the unit of mass, the kilogram artefact of platinum-iridium, by one based on a fixed numerical value of the Planck constant. This article outlines how this has come about, how it will work, why we need a system of measurement that is uniform, accessible world-wide and stable in the long term, and the international structures that now exist to achieve it. Copyright © 2017 Elsevier Ltd. All rights reserved.

  3. Lithography-based fabrication of nanopore arrays in freestanding SiN and graphene membranes

    Science.gov (United States)

    Verschueren, Daniel V.; Yang, Wayne; Dekker, Cees

    2018-04-01

    We report a simple and scalable technique for the fabrication of nanopore arrays on freestanding SiN and graphene membranes based on electron-beam lithography and reactive ion etching. By controlling the dose of the single-shot electron-beam exposure, circular nanopores of any size down to 16 nm in diameter can be fabricated in both materials at high accuracy and precision. We demonstrate the sensing capabilities of these nanopores by translocating dsDNA through pores fabricated using this method, and find signal-to-noise characteristics on par with transmission-electron-microscope-drilled nanopores. This versatile lithography-based approach allows for the high-throughput manufacturing of nanopores and can in principle be used on any substrate, in particular membranes made out of transferable two-dimensional materials.

  4. Restoring the lattice of Si-based atom probe reconstructions for enhanced information on dopant positioning.

    Science.gov (United States)

    Breen, Andrew J; Moody, Michael P; Ceguerra, Anna V; Gault, Baptiste; Araullo-Peters, Vicente J; Ringer, Simon P

    2015-12-01

    The following manuscript presents a novel approach for creating lattice based models of Sb-doped Si directly from atom probe reconstructions for the purposes of improving information on dopant positioning and directly informing quantum mechanics based materials modeling approaches. Sophisticated crystallographic analysis techniques are used to detect latent crystal structure within the atom probe reconstructions with unprecedented accuracy. A distortion correction algorithm is then developed to precisely calibrate the detected crystal structure to the theoretically known diamond cubic lattice. The reconstructed atoms are then positioned on their most likely lattice positions. Simulations are then used to determine the accuracy of such an approach and show that improvements to short-range order measurements are possible for noise levels and detector efficiencies comparable with experimentally collected atom probe data. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Low temperature synthesis of iodine-doped TiO2 nanocrystallites with enhanced visible-induced photocatalytic activity

    International Nuclear Information System (INIS)

    Ma Yi; Fu Jiwen; Tao Xia; Li Xin; Chen Jianfeng

    2011-01-01

    Iodine-doped TiO 2 nanocrystallites (denoted as I-TNCs) were prepared via a newly developed triblock copolymer-mediated sol-gel method at a temperature of 393 K. I-doping, crystallization and the formation of porous structure have been simultaneously achieved. The obtained particles were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and UV-vis spectrophotometer. The results indicated that the as-prepared I-TNCs possessed a diameter of ca. 5 nm with anatase crystalline structure and a specific surface area of over 200 m 2 g -1 . The presence of iodine expanded the photoresponse in visible light range, and led to enrich in surface hydroxyl group on the TiO 2 surface. Compared with the commercial photocatalyst P25, the I-TNCs significantly enhanced the photocatalytic efficiency in the degradation of rhodamine B and 2,4-dichlorophenol, and the I-TNCs with 2.5 mol% doping ratio exhibited the best photocatalytic activity.

  6. Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

    Science.gov (United States)

    Yang, Qin; Du, Yingying; Wang, Yifan; Wang, Zhiying; Ma, Jun; Wang, Jianglin; Zhang, Shengmin

    2017-06-01

    Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites. Here we firstly synthesized a series of hybrid bone composites, silicon-hydroxyapatites/silk fibroin/collagen, based on a specific molecular assembled strategy. Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice. In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs), extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite. More interestingly, we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors. In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect. Consequently, our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system, but also paves a new way for constructing multi-functional composite materials in the future.

  7. Natural CaO-TiO2-SiO2 based ceramics

    Directory of Open Access Journals (Sweden)

    Jelena Pantić

    2011-06-01

    Full Text Available Lešnica river deposits consist of a large number of minerals of different grain sizes including sphene. Since it is very difficult to obtain pure monophase titanite by different synthetic routes (sol-gel, coprecipitation, combustion, spray pyrolysis and hydrothermal method, the aim of this work was to study the structure of the sphene from the Lešnica river deposits and possibility of using it as a natural precursor for CaO-TiO2-SiO2 based ceramics. The sphene from Lešnica was analyzed by different methods: tristimulus colorimetry, infrared spectroscopy, electron microprobe and X-ray single crystal diffraction. It was confirmed that Al, Fe, Mn and P are present in the sphene structure and proposed that corresponding structural formula could be: (Ca2+1.008 Mn2+0.0021.010(Ti4+0.901 Fe3+0.033 Al3+0.060 P5+0.0010.995 Si4+1.024 O2-5.

  8. Si-doping bone composite based on protein template-mediated assembly for enhancing bone regeneration

    Institute of Scientific and Technical Information of China (English)

    Qin YANG; Yingying DU; Yifan WANG; Zhiying WANG; Jun MA; Jianglin WANG; Shengmin ZHANG

    2017-01-01

    Bio-inspired hybrid materials that contain organic and inorganic networks interpenetration at the molecular level have been a particular focus of interest on designing novel nanoscale composites.Here we firstly synthesized a series of hybrid bone composites,silicon-hydroxyapatites/silk fibroin/collagen,based on a specific molecular assembled strategy.Results of material characterization confirmed that silicate had been successfully doped into nano-hydroxyapatite lattice.In vitro evaluation at the cellular level clearly showed that these Si-doped composites were capable of promoting the adhesion and proliferation of rat mesenchymal stem cells (rMSCs),extremely enhancing osteoblastic differentiation of rMSCs compared with silicon-free composite.More interestingly,we found there was a critical point of silicon content in the composition on regulating multiple cell behaviors.In vivo animal evaluation further demonstrated that Si-doped composites enabled to significantly improve the repair of cranial bone defect.Consequently,our current work not only suggests fabricating a potential bone repair materials by integrating element-doping and molecular assembled strategy in one system,but also paves a new way for constructing multi-functional composite materials in the future.

  9. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  10. High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

    International Nuclear Information System (INIS)

    Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

    2012-01-01

    We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

  11. On the Mass Fractal Character of Si-Based Structural Networks in Amorphous Polymer Derived Ceramics

    Directory of Open Access Journals (Sweden)

    Sabyasachi Sen

    2015-03-01

    Full Text Available The intermediate-range packing of SiNxC4−x (0 ≤ x ≤ 4 tetrahedra in polysilycarbodiimide and polysilazane-derived amorphous SiCN ceramics is investigated using 29Si spin-lattice relaxation nuclear magnetic resonance (SLR NMR spectroscopy. The SiCN network in the polysilylcarbodiimide-derived ceramic consists predominantly of SiN4 tetrahedra that are characterized by a 3-dimensional spatial distribution signifying compact packing of such units to form amorphous Si3N4 clusters. On the other hand, the SiCN network of the polysilazane-derived ceramic is characterized by mixed bonded SiNxC4−x tetrahedra that are inefficiently packed with a mass fractal dimension of Df ~2.5 that is significantly lower than the embedding Euclidean dimension (D = 3. This result unequivocally confirms the hypothesis that the presence of dissimilar atoms, namely, 4-coordinated C and 3-coordinated N, in the nearest neighbor environment of Si along with some exclusion in connectivity between SiCxN4−x tetrahedra with widely different N:C ratios and the absence of bonding between C and N result in steric hindrance to an efficient packing of these structural units. It is noted that similar inefficiencies in packing are observed in polymer-derived amorphous SiOC ceramics as well as in proteins and binary hard sphere systems.

  12. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    International Nuclear Information System (INIS)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R.

    2000-01-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si + and C + ions into thermal SiO 2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO 2 . Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO 2

  13. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R

    2000-03-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si{sup +} and C{sup +} ions into thermal SiO{sub 2} and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO{sub 2}. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO{sub 2}.

  14. In vitro and in vivo evaluation of zinc-modified ca-si-based ceramic coating for bone implants.

    Directory of Open Access Journals (Sweden)

    Jiangming Yu

    Full Text Available The host response to calcium silicate ceramic coatings is not always favorable because of their high dissolution rates, leading to high pH within the surrounding physiological environment. Recently, a zinc-incorporated calcium silicate-based ceramic Ca2ZnSi2O7 coating, developed on a Ti-6Al-4V substrate using plasma-spray technology, was found to exhibit improved chemical stability and biocompatibility. This study aimed to investigate and compare the in vitro response of osteoblastic MC3T3-E1 cells cultured on Ca2ZnSi2O7 coating, CaSiO3 coating, and uncoated Ti-6Al-4V titanium control at cellular and molecular level. Our results showed Ca2ZnSi2O7 coating enhanced MC3T3-E1 cell attachment, proliferation, and differentiation compared to CaSiO3 coating and control. In addition, Ca2ZnSi2O7 coating increased mRNA levels of osteoblast-related genes (alkaline phosphatase, procollagen α1(I, osteocalcin, insulin-like growth factor-I (IGF-I, and transforming growth factor-β1 (TGF-β1. The in vivo osteoconductive properties of Ca2ZnSi2O7 coating, compared to CaSiO3 coating and control, was investigated using a rabbit femur defect model. Histological and histomorphometrical analysis demonstrated new bone formation in direct contact with the Ca2ZnSi2O7 coating surface in absence of fibrous tissue and higher bone-implant contact rate (BIC in the Ca2ZnSi2O7 coating group, indicating better biocompatibility and faster osseointegration than CaSiO3 coated and control implants. These results indicate Ca2ZnSi2O7 coated implants have applications in bone tissue regeneration, since they are biocompatible and able to osseointegrate with host bone.

  15. UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

    2006-01-01

    In this paper, we investigate the effect of UV irradiation on Vapor-Etching (VE) based Porous Silicon (PS) structure and luminescence under controlled atmosphere (N 2 , air, O 2 ). The oxidation evolution is monitored by Fourier transform infrared (FTIR) spectroscopy. FTIR measurements show that the SiH x bond, initially present in the freshly prepared PS layers, decreased progressively with UV irradiation time until they completely disappear. We found that this treatment accelerates the oxidation process. SiO x structures appear and gradually become dominant as regard to the SiH x species, while UV irradiation is in progress. Generally, the photoluminescence (PL) intensity of the PS layer decreases instantaneously at the starting by the UV excitation and stabilizes after a period depending on the ambient gas and the specific surface area of the porous structure. Further UV exposure leads to a linear decrease of the PL intensity due to change of surface passivation from SiH x to O y SiH x . After less than 100 min of UV irradiation, the PL intensity exhibits an exponential decay. UV exposure in air and O 2 leads approximately to the same PL behavior, although faster PL intensity decrease was observed under O 2 -rich ambient. This was explained as being due to intense hydrogen desorption in presence of oxygen. Correlations of PL results with FTIR measurements show that surface passivation determine the electronic states of silicon nano-crystallites and influence the photoluminescence efficiency

  16. A temperature-dependent gain control system for improving the stability of Si-PM-based PET systems

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Satomi, Junkichi; Watabe, Tadashi; Imaizumi, Masao; Shimosegawa, Eku; Hatazawa, Jun; Watabe, Hiroshi; Kanai, Yasukazu

    2011-01-01

    The silicon-photomultiplier (Si-PM) is a promising photodetector for the development of new PET systems due to its small size, high gain and relatively low sensitivity to the static magnetic field. One drawback of the Si-PM is that it has significant temperature-dependent gain that poses a problem for the stability of the Si-PM-based PET system. To reduce this problem, we developed and tested a temperature-dependent gain control system for the Si-PM-based PET system. The system consists of a thermometer, analog-to-digital converter, personal computer, digital-to-analog converter and variable gain amplifiers in the weight summing board of the PET system. Temperature characteristics of the Si-PM array are measured and the calculated correction factor is sent to the variable gain amplifier. Without this correction, the temperature-dependent peak channel shifts of the block detector were -55% from 20 deg. C to 35 deg.C. With the correction, the peak channel variations were corrected within ±8%. The coincidence count rate of the Si-PM-based PET system was measured using a Na-22 point source while monitoring the room temperature. Without the correction, the count rate inversely changed with the room temperature by 10% for 1.5 deg. C temperature changes. With the correction, the count rate variation was reduced to within 3.7%. These results indicate that the developed temperature-dependent gain control system can contribute to improving the stability of Si-PM-based PET systems.

  17. Penetrating heavy ion charge and velocity discrimination with a TimePix-based Si detector (for space radiation applications)

    Energy Technology Data Exchange (ETDEWEB)

    Pinsky, Lawrence S., E-mail: pinsky@uh.edu [University of Houston, 4800 Calhoun Blvd., Houston, TX 77204-5005 (United States); Empl, Anton [University of Houston, 4800 Calhoun Blvd., Houston, TX 77204-5005 (United States); Gutierrez, Andrea [University of Montreal, 2905 Chemin des services, Montreal, Que., H3T 1J4 (Canada); Jakubek, Jan [Institute of Experimental and Applied Physics, Czech Technical University, Horska 3a/22, CZ-12800 Prague 2-Albertov (Czech Republic); Kitamura, Hisashi [National Institute for Radiological Sciences, Anagawa 4-9-1, Inage, Chiba 263-8555 (Japan); Miller, Jack [Space Sciences Laboratory, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Leroy, Claude [University of Montreal, 2905 Chemin des services, Montreal, Que., H3T 1J4 (Canada); Stoffle, Nicholas [University of Houston, 4800 Calhoun Blvd., Houston, TX 77204-5005 (United States); Pospisil, Stanislav [Institute of Experimental and Applied Physics, Czech Technical University, Horska 3a/22, CZ-12800 Prague 2-Albertov (Czech Republic); Uchihori, Yukio; Yasuda, Nakahiro [National Institute for Radiological Sciences, Anagawa 4-9-1, Inage, Chiba 263-8555 (Japan); Zeitlin, Cary [Southwest Research Institute, 6220 Culebra Rd., San Antonio, TX 78238-5166 (United States)

    2011-05-15

    Exposures were made with Medipix2 TimePix-based Si detectors at the HIMAC facility in Japan to explore the potential for discrimination between tracks with differing charges and energies, but with very similar dE/dx values. Data were taken at 15 deg. increments for a number of different beams including 600 and 800 MeV/A Si, 180 MeV/A Ne and 100 MeV/A O. Data were also obtained for 400 MeV/A Si and 500 MeV/A Fe along with 290 and 180 MeV/A N. The TimePix chips have been calibrated to achieve the maximum resolution. Estimates for the angular resolution for these types of tracks are also possible from these data, which are essential in the development of a TimePix-based dosimetric device for use in a space radiation environment. One of the principal objectives of these data runs was to explore the resolution of TimePix-based Si detectors to discriminate between various ions with different energies and charges, but with similar dE/dx values in Si. Analysis of the images obtained shows the clear differences in the {delta}-ray halos for particles with similar dE/dx values but for differing charges and energies. These measurements are part of an ongoing program to explore the range of capabilities of the TimePix-based detector with respect to dosimetry uses in space.

  18. On the Mass Fractal Character of Si-Based Structural Networks in Amorphous Polymer Derived Ceramics.

    Science.gov (United States)

    Sen, Sabyasachi; Widgeon, Scarlett

    2015-03-17

    The intermediate-range packing of SiN x C 4- x (0 ≤ x ≤ 4) tetrahedra in polysilycarbodiimide and polysilazane-derived amorphous SiCN ceramics is investigated using 29 Si spin-lattice relaxation nuclear magnetic resonance (SLR NMR) spectroscopy. The SiCN network in the polysilylcarbodiimide-derived ceramic consists predominantly of SiN₄ tetrahedra that are characterized by a 3-dimensional spatial distribution signifying compact packing of such units to form amorphous Si₃N₄ clusters. On the other hand, the SiCN network of the polysilazane-derived ceramic is characterized by mixed bonded SiN x C 4- x tetrahedra that are inefficiently packed with a mass fractal dimension of D f ~2.5 that is significantly lower than the embedding Euclidean dimension ( D = 3). This result unequivocally confirms the hypothesis that the presence of dissimilar atoms, namely, 4-coordinated C and 3-coordinated N, in the nearest neighbor environment of Si along with some exclusion in connectivity between SiC x N 4- x tetrahedra with widely different N:C ratios and the absence of bonding between C and N result in steric hindrance to an efficient packing of these structural units. It is noted that similar inefficiencies in packing are observed in polymer-derived amorphous SiOC ceramics as well as in proteins and binary hard sphere systems.

  19. Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

    International Nuclear Information System (INIS)

    Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

    2005-01-01

    A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

  20. Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

    Science.gov (United States)

    Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

    2018-06-01

    An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

  1. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  2. Design and optimization of high-performance slot-microring Si-photodetector based on internal photoemission effect

    Science.gov (United States)

    Hosseinifar, Mitra; Ahmadi, Vahid; Ebnali-Heidari, Majid

    2017-08-01

    This paper presents the design and optimization of a microring resonator enhanced-internal photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication. Two PD configurations are considered: the first consists of an MRR that is partially surrounded by a nanolayer of silicide with a single Schottky barrier on p-Si MRR; and the second consists of a silicide film buried in the width midpoints of a Si-based MRR where photoemission occurs over the two Schottky barriers. Several silicides are considered for the stripe (PtSi, Pd2Si, TaSi2 and CoSi2). The important features of the device, such as quantum efficiency (QE), responsivity, CW sensitivity and dark current are discussed and the trade-off between 3 dB bandwidth and QE are analyzed for nanoscaled absorption layer. In this regard, some design curves are presented for the optimized MRRE-IPE-PDs. Additionally, this paper reveals substantial improvement via comparisons with QE and responsivity measurements reported in the literature. Bandwidth-efficiency product of 61-71 GHz, responsivities of 0.8-0.9 and QE of 64-71% and the minimum receiver sensitivity of -65 to -66 dBm are also predicted for single and double Schottky barriers, respectively.

  3. Confirming the RNAi-mediated mechanism of action of siRNA-based cancer therapeutics in mice.

    Science.gov (United States)

    Judge, Adam D; Robbins, Marjorie; Tavakoli, Iran; Levi, Jasna; Hu, Lina; Fronda, Anna; Ambegia, Ellen; McClintock, Kevin; MacLachlan, Ian

    2009-03-01

    siRNAs that specifically silence the expression of cancer-related genes offer a therapeutic approach in oncology. However, it remains critical to determine the true mechanism of their therapeutic effects. Here, we describe the preclinical development of chemically modified siRNA targeting the essential cell-cycle proteins polo-like kinase 1 (PLK1) and kinesin spindle protein (KSP) in mice. siRNA formulated in stable nucleic acid lipid particles (SNALP) displayed potent antitumor efficacy in both hepatic and subcutaneous tumor models. This was correlated with target gene silencing following a single intravenous administration that was sufficient to cause extensive mitotic disruption and tumor cell apoptosis. Our siRNA formulations induced no measurable immune response, minimizing the potential for nonspecific effects. Additionally, RNAi-specific mRNA cleavage products were found in tumor cells, and their presence correlated with the duration of target mRNA silencing. Histological biomarkers confirmed that RNAi-mediated gene silencing effectively inhibited the target's biological activity. This report supports an RNAi-mediated mechanism of action for siRNA antitumor effects, suggesting a new methodology for targeting other key genes in cancer development with siRNA-based therapeutics.

  4. Real field mission profile oriented design of a SiC-based PV-inverter application

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper introduces a real field mission profile oriented design tool for the new generation of grid connected PV-inverters applications based on SiC-devices. The proposed design tool consists of a grid connected PV-inverter model, an ElectroThermal model, a converter safe operating area (SOA...... Zth_H in order to perform in a safe mode for the whole operating range. Furthermore, the proposed design tool considers the mission profile (the measured solar irradiance and ambient temperature) from the real field where the converter will operate. Thus, a realistic loading of the converter devices......) model, a mission profile model and an the evaluation block. The PV-system model involves a three level bipolar switch neutral point clamped (3L-BS NPC) inverter connected to the three phase grid through a LCL-filter. Moreover, the SOA model calculates the required converter heatsink thermal impedance...

  5. Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

    Science.gov (United States)

    Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

    2018-03-01

    Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

  6. 16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

    International Nuclear Information System (INIS)

    Zhao Lei; An Junming; Zhang Jiashun; Song Shijiao; Wu Yuanda; Hu Xiongwei

    2011-01-01

    A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, free spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. (semiconductor devices)

  7. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane

    Energy Technology Data Exchange (ETDEWEB)

    Meister, H.; Eich, T.; Endstrasser, N.; Giannone, L.; Kannamueller, M.; Kling, A.; Koll, J.; Trautmann, T. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstr. 2, D-85748 Garching (Germany); Detemple, P.; Schmitt, S. [Institut fuer Mikrotechnik Mainz GmbH, Carl-Zeiss-Str. 18-20, D-55129 Mainz (Germany); Collaboration: ASDEX Upgrade Team

    2010-10-15

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 deg. C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 {mu}m thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 deg. C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  8. A 12-Fold ThSi2 Interpenetrated Network Utilizing a Glycine-Based Pseudopeptidic Ligand

    Directory of Open Access Journals (Sweden)

    Edward Loukopoulos

    2018-01-01

    Full Text Available We report the synthesis and characterization of a 3D Cu(II coordination polymer, [Cu3(L12(H2O8]·8H2O (1, with the use of a glycine-based tripodal pseudopeptidic ligand (H3L1 = N,N′,N″-tris(carboxymethyl-1,3,5-benzenetricarboxamide or trimesoyl-tris-glycine. This compound presents the first example of a 12-fold interpenetrated ThSi2 (ths net. We attempt to justify the unique topology of 1 through a systematic comparison of the synthetic parameters in all reported structures with H3L1 and similar tripodal pseudopeptidic ligands. We additionally explore the catalytic potential of 1 in the A3 coupling reaction for the synthesis of propargylamines. The compound acts as a very good heterogeneous catalyst with yields up to 99% and loadings as low as 3 mol %.

  9. Integrated Si-based nanoplasmonic sensor with phase-sensitive angular interrogation

    Energy Technology Data Exchange (ETDEWEB)

    Patskovsky, Sergiy; Meunier, Michel [Laser Processing and Plasmonics Laboratory, Ecole Polytechnique de Montreal, C. P. 6079, succ. Centre-Ville, Montreal, QC, H3C 3A7 (Canada)

    2013-06-15

    This work is related to the development of an integrated Surface Plasmon Resonance (SPR) sensor on silicon platform. The optical properties of metallic nanogratings fabricated on the semiconductor structure allow direct plasmonic detection in transmission mode. Specially designed angular interrogation method provides a periodic signal with phase dependent on the conditions of surface plasmon excitation. Proposed technique leads to sensitivity better than 10{sup -6} RIU for conventional SPR Kretschmann configuration and was tested on the integrated Si-based nanoplasmonic chip. Developed concept is promising for low-cost mono and multi -sensing applications by portable or stationary platforms. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membranea)

    Science.gov (United States)

    Meister, H.; Eich, T.; Endstrasser, N.; Giannone, L.; Kannamüller, M.; Kling, A.; Koll, J.; Trautmann, T.; ASDEX Upgrade Team; Detemple, P.; Schmitt, S.

    2010-10-01

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 °C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 μm thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 °C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  11. Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction

    International Nuclear Information System (INIS)

    Yang, C; Li, X M; Yu, W D; Gao, X D; Cao, X; Li, Y Z

    2009-01-01

    An n-type Zn 1-x-y Be x Mg y O thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W -1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors. (fast track communication)

  12. Mission-profile-based stress analysis of bond-wires in SiC power modules

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede

    2016-01-01

    This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken...... into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 minutes long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network...... and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation....

  13. Electrochemical properties of rapidly solidified Si-Ti-Ni(-Cu) base anode for Li-ion rechargeable batteries

    Science.gov (United States)

    Kwon, Hye Jin; Sohn, Keun Yong; Park, Won-Wook

    2013-11-01

    In this study, rapidly solidified Si-Ti-Ni-Cu alloys have been investigated as high capacity anodes for Li-ion secondary batteries. To obtain nano-sized Si particles dispersed in the inactive matrix, the alloy ribbons were fabricated using the melt spinning process. The thin ribbons were pulverized using ball-milling to make a fine powder of ˜ 4 µm average size. Coin-cell assembly was carried out under an argon gas in a glove box, in which pure lithium was used as a counter-electrode. The cells were cycled using the galvanostatic method in the potential range of 0.01 V and 1.5 V vs. Li/Li+. The microstructure and morphology were examined using an x-ray diffractometer, Field-Emission Scanning Electron Microscopy and High Resolution Transmission Electron Microscopy. Among the anode alloys, the Si70Ti15Ni15 electrodes had the highest discharge capacity (974.1 mAh/g) after the 50th cycle, and the Si60Ti16Ni16Cu8 electrode showed the best coulombic efficiency of ˜95.9% in cyclic behavior. It was revealed that the Si7Ni4Ti4 crystal phase coexisting with an amorphous phase, could more efficiently act as a buffer layer than the fully crystallized Si7Ni4Ti4 phase. Consequently, the electrochemical properties of the anode materials pronouncedly improved when the nano-sized primary Si particle was dispersed in the inactive Si7Ni4Ti4-based matrix mixed with an amorphous structure.

  14. Efficient delivery of Notch1 siRNA to SKOV3 cells by cationic cholesterol derivative-based liposome

    Directory of Open Access Journals (Sweden)

    Zhao Y

    2016-10-01

    Full Text Available Yun-Chun Zhao,1 Li Zhang,2 Shi-Sen Feng,3 Lu Hong,3 Hai-Li Zheng,3 Li-Li Chen,4 Xiao-Ling Zheng,1 Yi-Qing Ye,1 Meng-Dan Zhao,1 Wen-Xi Wang,3 Cai-Hong Zheng1 1Pharmacy Department, Women’s Hospital, 2Pharmacy Department, The Second Affiliated Hospital, School of Medicine, Zhejiang University, Hangzhou, People’s Republic of China; 3Department of Pharmaceutic Preparation, College of Pharmaceutical Science, Zhejiang University of Technology, Hangzhou, 4Department of Gynecologic Oncology, Women’s Hospital, School of Medicine, Zhejiang University, Hangzhou, People’s Republic of China Abstract: A novel cationic cholesterol derivative-based small interfering RNA (siRNA interference strategy was suggested to inhibit Notch1 activation in SKOV3 cells for the gene therapy of ovarian cancer. The cationic cholesterol derivative, N-(cholesterylhemisuccinoyl-amino-3-propyl-N, N-dimethylamine (DMAPA-chems liposome, was incubated with siRNA at different nitrogen-to-phosphate ratios to form stabilized, near-spherical siRNA/DMAPA-chems nanoparticles with sizes of 100–200 nm and zeta potentials of 40–50 mV. The siRNA/DMAPA-chems nanoparticles protected siRNA from nuclease degradation in 25% fetal bovine serum. The nanoparticles exhibited high cell uptake and Notch1 gene knockdown efficiency in SKOV3 cells at an nitrogen-to-phosphate ratio of 100 and an siRNA concentration of 50 nM. They also inhibited the growth and promoted the apoptosis of SKOV3 cells. These results may provide the potential for using cationic cholesterol derivatives as efficient nonviral siRNA carriers for the suppression of Notch1 activation in ovarian cancer cells. Keywords: siRNA, cationic cholesterol derivative, Notch1, ovarian cancer cells

  15. Significantly Enhanced Dielectric Performances and High Thermal Conductivity in Poly(vinylidene fluoride)-Based Composites Enabled by SiC@SiO2 Core-Shell Whiskers Alignment.

    Science.gov (United States)

    He, Dalong; Wang, Yao; Song, Silong; Liu, Song; Deng, Yuan

    2017-12-27

    Design of composites with ordered fillers arrangement results in anisotropic performances with greatly enhanced properties along a specific direction, which is a powerful tool to optimize physical properties of composites. Well-aligned core-shell SiC@SiO 2 whiskers in poly(vinylidene fluoride) (PVDF) matrix has been achieved via a modified spinning approach. Because of the high aspect ratio of SiC whiskers, strong anisotropy and significant enhancement in dielectric constant were observed with permittivity 854 along the parallel direction versus 71 along the perpendicular direction at 20 vol % SiC@SiO 2 loading, while little increase in dielectric loss was found due to the highly insulating SiO 2 shell. The anisotropic dielectric behavior of the composite is perfectly understood macroscopically to have originated from anisotropic intensity of interfacial polarization based on an equivalent circuit model of two parallel RC circuits connected in series. Furthermore, finite element simulations on the three-dimensional distribution of local electric field, polarization, and leakage current density in oriented SiC@SiO 2 /PVDF composites under different applied electrical field directions unambiguously revealed that aligned core-shell SiC@SiO 2 whiskers with a high aspect ratio significantly improved dielectric performances. Importantly, the thermal conductivity of the composite was synchronously enhanced over 7 times as compared to that of PVDF matrix along the parallel direction at 20 vol % SiC@SiO 2 whiskers loading. This study highlights an effective strategy to achieve excellent comprehensive properties for high-k dielectrics.

  16. Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.; Varela-Feria, F. M.

    2006-12-01

    The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5 300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ˜30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.

  17. Analysis of neutron irradiation effects on thermal conductivity of SiC-based composites and monolithic ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Senor, D.J. [Pacific Northwest National Lab., Richland, WA (United States)

    1997-08-01

    After irradiation of a variety of SiC-based materials to 33 or 43 dpa-SiC at 1000{degrees}C, their thermal conductivity values were degraded and became relatively temperature independent, which indicates that the thermal resistivity was dominated by point defect scattering. The magnitude of irradiation-induced conductivity degradation was greater at lower temperatures and typically was larger for materials with higher unirradiated conductivity. From these data, a K{sub irr}/K{sub unirr} ratio map which predicts the expected equilibrium thermal conductivity for most SiC-based materials as a function of irradiation temperature was derived. Due to a short-term EOC irradiation at 575{degrees} {+-} 60{degrees}C, a duplex irradiation defect structure was established. Based on an analysis of the conductivity and swelling recovery after post-irradiation anneals for these materials with the duplex defect structure, several consequences for irradiating SiC at temperatures of 1000{degrees}C or above are given. In particular, the thermal conductivity degradation in the fusion relevant 800{degrees}-1000{degrees}C temperature range may be more severe than inferred from SiC swelling behavior.

  18. Effect of Boron on Microstructure and Microhardness Properties of Mo-Si-B Based Coatings Produced Via TIG Process

    Directory of Open Access Journals (Sweden)

    Islak S.

    2016-09-01

    Full Text Available In this study, Mo-Si-B based coatings were produced using tungsten inert gas (TIG process on the medium carbon steel because the physical, chemical, and mechanical properties of these alloys are particularly favourable for high-temperature structural applications. It is aimed to investigate of microstructure and microhardness properties of Mo-Si-B based coatings. Optical microscopy (OM, X-ray diffraction (XRD and scanning electron microscopy (SEM were used to characterize the microstructures of Mo-Si-B based coatings. The XRD results showed that microstructure of Mo–Si–B coating consists of α-Mo, α-Fe, Mo2B, Mo3Si and Mo5SiB2 phases. It was reported that the grains in the microstructure were finer with increasing amounts of boron which caused to occur phase precipitations in the grain boundary. Besides, the average microhardness of coatings changed between 735 HV0.3 and 1140 HV0.3 depending on boron content.

  19. Analysis of neutron irradiation effects on thermal conductivity of SiC-based composites and monolithic ceramics

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Senor, D.J.

    1997-01-01

    After irradiation of a variety of SiC-based materials to 33 or 43 dpa-SiC at 1000 degrees C, their thermal conductivity values were degraded and became relatively temperature independent, which indicates that the thermal resistivity was dominated by point defect scattering. The magnitude of irradiation-induced conductivity degradation was greater at lower temperatures and typically was larger for materials with higher unirradiated conductivity. From these data, a K irr /K unirr ratio map which predicts the expected equilibrium thermal conductivity for most SiC-based materials as a function of irradiation temperature was derived. Due to a short-term EOC irradiation at 575 degrees ± 60 degrees C, a duplex irradiation defect structure was established. Based on an analysis of the conductivity and swelling recovery after post-irradiation anneals for these materials with the duplex defect structure, several consequences for irradiating SiC at temperatures of 1000 degrees C or above are given. In particular, the thermal conductivity degradation in the fusion relevant 800 degrees-1000 degrees C temperature range may be more severe than inferred from SiC swelling behavior

  20. Breaking through the strength-ductility trade-off dilemma in an Al-Si-based casting alloy.

    Science.gov (United States)

    Dang, B; Zhang, X; Chen, Y Z; Chen, C X; Wang, H T; Liu, F

    2016-08-09

    Al-Si-based casting alloys have a great potential in various industrial applications. Common strengthening strategies on these alloys are accompanied inevitably by sacrifice of ductility, known as strength-ductility trade-off dilemma. Here, we report a simple route by combining rapid solidification (RS) with a post-solidification heat treatment (PHT), i.e. a RS + PHT route, to break through this dilemma using a commercial Al-Si-based casting alloy (A356 alloy) as an example. It is shown that yield strength and elongation to failure of the RS + PHT processed alloy are elevated simultaneously by increasing the cooling rate upon RS, which are not influenced by subsequent T6 heat treatment. Breaking through the dilemma is attributed to the hierarchical microstructure formed by the RS + PHT route, i.e. highly dispersed nanoscale Si particles in Al dendrites and nanoscale Al particles decorated in eutectic Si. Simplicity of the RS + PHT route makes it being suitable for industrial scaling production. The strategy of engineering microstructures offers a general pathway in tailoring mechanical properties of other Al-Si-based alloys. Moreover, the remarkably enhanced ductility of A356 alloy not only permits strengthening further the material by work hardening but also enables possibly conventional solid-state forming of the material, thus extending the applications of such an alloy.

  1. Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Woerlee, P.H.; Wolters, Robertus A.M.

    2002-01-01

    Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct

  2. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  3. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    Directory of Open Access Journals (Sweden)

    Yudi Darma

    2008-03-01

    Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

  4. Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

    Science.gov (United States)

    Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

    2016-04-01

    Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.

  5. BiOBr@SiO2 flower-like nanospheres chemically-bonded on cement-based materials for photocatalysis

    Science.gov (United States)

    Wang, Dan; Hou, Pengkun; Yang, Ping; Cheng, Xin

    2018-02-01

    Endowment of photocatalytic property on the surface of concrete structure can contribute to the self-cleaning of the structure and purification of the polluted environment. We developed a nano-structured BiOBr@SiO2 photocatalyst and innovatively used for surface-treatment of cement-based materials with the hope of attaining the photocatalytic property in visible-light region and surface modification/densification performances. The SiO2 layer on the flower-like BiOBr@SiO2 helps to maintain a stable distribution of the photocatalyst, as well as achieving a chemical bonding between the coating and the cement matrix. Results showed that the color fading rate of during the degradation of Rhodamine B dye of the BiOBr-cem sample is 2 times higher compared with the commonly studied C, N-TiO2-cem sample. The photo-degradation rates of samples BiOBr-cem and BiOBr@SiO2-cem are 93 and 81% within 150 min, respectively, while sample BiOBr@SiO2-cem reveals a denser and smoother surface after curing for 28 days and pore-filling effect at size within 0.01-0.2 μm when compared with untreated samples. Moreover, additional C-S-H gel can be formed due to the pozzolanic reaction between BiOBr@SiO2 and the hardened cement matrix. Both advantages of the BiOBr@SiO2 favor its application for surface-treatment of hardened cement-based material to acquire an improved surface quality, as well as durable photocatalytic functionality.

  6. CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

    Science.gov (United States)

    Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

    2018-04-01

    The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

  7. Electro-physical properties of a Si-based MIS structure with a low-k SiOC(-H) film

    Energy Technology Data Exchange (ETDEWEB)

    Zakirov, Anvar Sagatovich; Navamathavan, Rangaswamy; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu [Cheju National University, Jeju (Korea, Republic of)

    2006-09-15

    SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (C{sub ma}x{sub /}C{sub min}) depended on the [MTES/(MTES+O{sub 2})] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 .deg. C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced 'steps'. The bonds between Si-O and the -CH{sub 3} group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O{sub 2})] flow rate ratio and the annealing temperature because the fixed positive (Si-CH{sub 3}){sup +} and negative (Si-O){sup -} changed the configuration at the SiOC(-H)/p-Si(100) interface. The SiOC(-H) film had donor (O{sub 2}) and acceptor (Si-CH{sub 3} -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH{sub 3}){sup +} and the (Si-O){sup -} bonds.

  8. Neutron-irradiation effects on SiO2 and SiO2-based glass ceramics

    International Nuclear Information System (INIS)

    Porter, D.L.; Pascucci, M.R.; Olbert, B.H.

    1981-01-01

    A preliminary data base to assess the radiation-damage resistance of some glass ceramic materials has been gathered. These are rather complex materials, both in structure and composition, but possess many of those properties required for structural, insulator applications in fusion-reactor design. Property measurements were made after fast (E > 0.1 MeV) neutron irradiations of approx. 2.4 x 10 22 n/cm 2 at 400 0 C and 550 0 C. The results have shown general resistance to changes in thermal expansion and most did not eperience severe loss of mechanical integrity. The maximum volume expansion occurred in several of the fluorophlogapite-based glass ceramics (approx. 3.0%). Several observations demonstrated differences between the effects of neutron and electron irradiation; irradiation conditions proptotypic of projected reactor uses need be considered for optimum materials selection

  9. Development and Characterization of Carbon Nanotubes (CNTs) and Silicon Carbide (SiC) Reinforced Al-based Nanocomposites

    Science.gov (United States)

    Gujba, Kachalla Abdullahi

    Composites are engineered materials developed from constituent materials; matrix and reinforcements, to attain synergistic behavior at the micro and macroscopic level which are different from the individual materials. The high specific strength, low weight, excellent chemical resistance and fatigue endurance makes these composites superior than other materials despite anisotropic behaviors. Metal matrix composites (MMCs) have excellent physical and mechanical properties and alumium (Al) alloy composites have gained considerable interest and are used in multiple industries including: aerospace, structural and automotive. The aim of this research work is to develop an advanced Al-based nanocomposites reinforced with Carbon nanotubes (CNTs) and silicon carbide particulates (SiCp) nanophases using mechanical alloying and advanced consolidation procedure (Non-conventional) i.e. Spark Plasma Sintering (SPS) using two types of aluminum alloys (Al-7Si-0.3mg and Al-12Si-0.3Mg). Different concentrations of SiCp and CNTs were added and ball milled for different milling periods under controlled atmosphere to study the effect of milling time and the distribution of the second phases. Characterization techniques were used to investigate the morphology of the as received monolithic and milled powder using Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive Spectroscopy (EDS), X-Ray Mapping, X-Ray Diffraction (XRD) and Particle Size Analyses (PSA). The results revealed that the addition of high concentrations of SiCp and CNTs in both alloys aided in refining the structure of the resulting powder further as the reinforcement particles acted like a grinding agent. Good distribution of reinforcing particles was observed from SEM and no compositional fluctuations were observed from the EDS. Some degree of agglomerations was observed despite the ethyl alcohol sonication effect of the CNTs before ball milling. From the XRD; continuous reduction in crystallite size and

  10. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  11. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xunming [University of Toledo; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  12. Design and Fabrication of Piezoresistive Based Encapsulated Poly-Si Cantilevers for Bio/chemical Sensing

    Science.gov (United States)

    Krishna, N. P. Vamsi; Murthy, T. R. Srinivasa; Reddy, K. Jayaprakash; Sangeeth, K.; Hegde, G. M.

    Cantilever-based sensing is a growing research field not only within micro regime but also in nano technology. The technology offers a method for rapid, on-line and in-situ monitoring of specific bio/chemical substances by detecting the nanomechanical responses of a cantilever sensor. Cantilever with piezoresistive based detection scheme is more attractive because of its electronics compatibility. Majority of commercially available micromachined piezoresistive sensors are bulk micromachined devices and are fabricated using single crystal silicon wafers. As substrate properties are not important in surface micromachining, the expensive silicon wafers can be replaced by cheaper substrates, such as poly-silicon, glass or plastic. Here we have designed SU-8 based bio/chemical compatible micro electro mechanical device that includes an encapsulated polysilicon piezoresistor for bio/chemical sensing. In this paper we report the design, fabrication and analysis of the encapsulated poly-Si cantilevers. Design and theoretical analysis are carried out using Finite Element Analysis software. For fabrication of poly-silicon piezoresistive cantilevers we followed the surface micromachining process steps. Preliminary characterization of the cantilevers is presented.

  13. Laser cladding Co-based alloy/SiCp composite coatings on IF steel

    International Nuclear Information System (INIS)

    Li Mingxi; He Yizhu; Sun Guoxiong

    2004-01-01

    Hardfacing coatings, made of Co-Cr-W-Ni-Si alloy + 20% SiCp, deposited by laser cladding on IF steel is introduced. Cross-section of such coatings has been examined to reveal their microstructure using optical microscope, scanning electron microscope (SEM) and X-ray diffractometer (XRD). MM-200 type wear tester is used to examine wear resistance of the coatings. The results showed that SiCp is dissolved completely during laser cladding process under this conditions, the primary phase γ-Co dendrite and Si 2 W, CoWSi, Cr 3 Si, CoSi 2 formed by C, Si reacting with other elements existed in the coatings. There existed some crystallization morphologies in different regions, such as planar (at the interface), followed cellular and dendrite crystallization from interface to the surface. The direction of solidification changes from one direction perpendicular to interface to multi-directions at the central and upper regions of the clad. The results also showed that the wear resistance of the clad improved by adding SiCp

  14. Cluster-based bulk metallic glass formation in Fe-Si-B-Nb alloy systems

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, C L; Wang, Q; Li, F W; Li, Y H; Wang, Y M; Dong, C [State Key Laboratory of Materials Modification, Dalian University of Technology (DUT), Dalian 116024 (China); Zhang, W; Inoue, A, E-mail: dong@dlut.edu.c [Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577 (Japan)

    2009-01-01

    Bulk metallic glass formations have been explored in Fe-B-Si-Nb alloy system using the so-called atomic cluster line approach in combination with minor alloying guideline. The atomic cluster line refers to a straight line linking binary cluster to the third element in a ternary system. The basic ternary compositions in Fe-B-Si system are determined by the inetersection points of two cluster lines, namely Fe-B cluster to Si and Fe-Si cluster to B, and then further alloyed with 3-5 at. % Nb for enhancing glass forming abilities. BMG rods with a diameter of 3 mm are formed under the case of minor Nb alloying the basic intersecting compositions of Fe{sub 8}B{sub 3}-Si with Fe{sub 12}Si-B and Fe{sub 8}B{sub 2}-Si with Fe{sub 9}Si-B. The BMGs also exhibit high Vickers hardness (H{sub v}) of 1130-1164 and high Young's modulous (E) of 170-180 GPa

  15. Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

    Science.gov (United States)

    Sacksteder, Dagny; Waters, Deborah L.; Zhu, Dongming

    2018-01-01

    High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiCf/SiC and Cf/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on Cf/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

  16. A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

    Science.gov (United States)

    Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

    2018-01-01

    Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

  17. Nanotoxicity: a key obstacle to clinical translation of siRNA-based nanomedicine.

    Science.gov (United States)

    Xue, Hui Yi; Liu, Shimeng; Wong, Ho Lun

    2014-02-01

    siRNAs have immense therapeutic potential for the treatment of various gene-related diseases ranging from cancer, viral infections and neuropathy to autoimmune diseases. However, their bench-to-bedside translation in recent years has faced several challenges, with inefficient siRNA delivery being one of the most frequently encountered issues. In order to improve the siRNA delivery especially for systemic treatment, nanocarriers made of polymers, lipids or inorganic materials have become almost essential. The 'negative' aspects of these carriers such as their nanotoxicity and immunogenicity thus can no longer be overlooked. In this article, we will extensively review the nanotoxicity of siRNA carriers. The strategies for mitigating the risks of nanotoxicity and the methodology for evaluating these strategies will also be discussed. By addressing this often overlooked but important issue, it will help clear the way for siRNAs to fulfill their promise as a versatile class of therapeutic agents.

  18. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

    2007-10-15

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

  19. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    International Nuclear Information System (INIS)

    Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

    2007-01-01

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

  20. SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method

    Directory of Open Access Journals (Sweden)

    X. F. Zeng

    2013-01-01

    Full Text Available We reported the SiO2 nanopillars on microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR, and the different heights of SiO2 nanopillars on microroughened ITO/GaN were obtained after etching. Compared to a regular (flat surface GaN-based LED, the light output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%–49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars was increasing cause resulting in more rough on the microscale surface of GaN-based LEDs.

  1. Development of an ultrahigh-resolution Si-PM-based dual-head GAGG coincidence imaging system

    Science.gov (United States)

    Yamamoto, Seiichi; Watabe, Hiroshi; Kanai, Yasukazu; Kato, Katsuhiko; Hatazawa, Jun

    2013-03-01

    A silicon photomultiplier (Si-PM) is a promising photodetector for high resolution PET systems due to its small channel size and high gain. Using Si-PMs, it will be possible to develop a high resolution imaging systems. For this purpose, we developed a small field-of-view (FOV) ultrahigh-resolution Si-PM-based dual-head coincidence imaging system for small animals and plant research. A new scintillator, Ce doped Gd3Al12Ga3O12 (GAGG), was selected because of its high light output and its emission wavelength matched with the Si-PM arrays and contained no radioactivity. Each coincidence imaging block detector consists of 0.5×0.5×5 mm3 GAGG pixels combined with a 0.1-mm thick reflector to form a 20×17 matrix that was optically coupled to a Si-PM array (Hamamatsu MPPC S11064-050P) with a 1.5-mm thick light guide. The GAGG block size was 12.0×10.2 mm2. Two GAGG block detectors were positioned face to face and set on a flexible arm based detector stand. All 0.5 mm GAGG pixels in the block detectors were clearly resolved in the 2-dimensional position histogram. The energy resolution was 14.4% FWHM for the Cs-137 gamma ray. The spatial resolution was 0.7 mm FWHM measured using a 0.25 mm diameter Na-22 point source. Small animal and plant images were successfully obtained. We conclude that our developed ultrahigh-resolution Si-PM-based dual-head coincidence imaging system is promising for small animal and plant imaging research.

  2. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  3. Controller design and implementation of a three-phase Active Front End using SiC based MOSFETs

    DEFF Research Database (Denmark)

    Haase, Frerk; Kouchaki, Alireza; Nymand, Morten

    2015-01-01

    The design and implementation of a three phase Active Front End for power factor correction purposes using fast switching SiC based MOSFETs is presented. Possible applications are within the drives- and renewable energy sector. The controller is designed and implemented in the synchronous rotating...

  4. Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

    Science.gov (United States)

    Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

    2016-09-01

    A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer

    Science.gov (United States)

    Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat

    2016-01-01

    A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.

  6. Microstructure and wear property of the Ti5Si3/TiC reinforced Co-based coatings fabricated by laser cladding on Ti-6Al-4V

    Science.gov (United States)

    Weng, Fei; Yu, Huijun; Liu, Jianli; Chen, Chuanzhong; Dai, Jingjie; Zhao, Zhihuan

    2017-07-01

    Ti5Si3/TiC reinforced Co-based composite coatings were fabricated on Ti-6Al-4V titanium alloy by laser cladding with Co42 and SiC mixture. Microstructure and wear property of the cladding coatings with different content of SiC were investigated. During the cladding process, the original SiC dissolved and reacted with Ti forming Ti5Si3 and TiC. The complex in situ formed phases were found beneficial to the improvement of the coating property. Results indicated that the microhardness of the composite coatings was enhanced to over 3 times the substrate. The wear resistance of the coatings also showed distinct improvement (18.4-57.4 times). More SiC gave rise to better wear resistance within certain limits. However, too much SiC (20 wt%) was not good for the further improvement of the wear property.

  7. A new physics-based self-heating effect model for 4H-SiC MESFETs

    International Nuclear Information System (INIS)

    Cao Quanjun; Zhang Yimen; Zhang Yuming

    2008-01-01

    A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I – V curves with the self-heating effect is obtained. (condensed matter: electronic structure, electrical, magnetic, and optical propertiesx)

  8. Application of large area SiPMs for the readout of a plastic scintillator based timing detector

    Science.gov (United States)

    Betancourt, C.; Blondel, A.; Brundler, R.; Dätwyler, A.; Favre, Y.; Gascon, D.; Gomez, S.; Korzenev, A.; Mermod, P.; Noah, E.; Serra, N.; Sgalaberna, D.; Storaci, B.

    2017-11-01

    In this study an array of eight 6 mm × 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm × 6 cm × 1 cm and 120 cm × 11 cm × 2.5 cm have been studied. An 8-channel SiPM anode readout ASIC (MUSIC R1) based on a novel low input impedance current conveyor has been used to read out and amplify SiPMs independently and sum the signals at the end. Prospects for applications in large-scale particle physics detectors with timing resolution below 100 ps are provided in light of the results.

  9. Effect of pre-deformation temperature on reverse transformation characteristic in Fe-Mn-Si based alloys

    International Nuclear Information System (INIS)

    Wang, D.; Xing, X.; Chen, J.; Dong, Z.; Liu, W.

    2000-01-01

    Two alloys of A: Fe-28Mn-6Si-5Cr(wt.%) and B: Fe-13Mn-5Si-12Cr-6Ni(wt.%) with different Ms temperatures were selected to be subjected to tensile deformation under different temperatures. The effect of deformation temperature on shape memory effect (SME) and the reverse transformation kinetics were studied respectively. It was found that: (1) The best SME could be obtained by deformation at Ms temperature; (2) The As temperature varied with deformation temperature. The lower the deformation temperature was, the lower the As temperature would be; (3) Some non-transformation related strain recovery between deformation temperature and As temperature was observed to be resulted from the retraction of stacking faults. The facts that the variation of As temperature with deformation temperature, as well as the non-transformation strain recovery imply that the γ→ε martensitic transformation in Fe-Mn-Si based shape memory alloys exhibits quasithermoelastic property. (orig.)

  10. arXiv Application of large area SiPMs for the readout of a plastic scintillator based timing detector

    CERN Document Server

    Betancourt, C.; Brundler, R.; Dätwyler, A.; Favre, Y.; Gascon, D.; Gomez, S.; Korzenev, Alexander; Mermod, P.; Noah, E.; Serra, N.; Sgalaberna, D.; Storaci, B.

    2017-11-27

    In this study an array of eight 6 mm × 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm × 6 cm × 1 cm and 120 cm × 11 cm × 2.5 cm have been studied. An 8-channel SiPM anode readout ASIC (MUSIC R1) based on a novel low input impedance current conveyor has been used to read out and amplify SiPMs independently and sum the signals at the end. Prospects for applications in large-scale particle physics detectors with timing resolution below 100 ps are provided in light of the results.

  11. Si-based optical I/O for optical memory interface

    Science.gov (United States)

    Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

    2012-01-01

    Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

  12. Methods of improving mechanical and biomedical properties of Ca-Si-based ceramics and scaffolds.

    Science.gov (United States)

    Wu, Chengtie

    2009-05-01

    CaSiO3 ceramics and porous scaffolds are regarded as potential materials for bone tissue regeneration owing to their excellent bioactivity. However, their low mechanical strength and high dissolution limit their further biomedical application. In this report, we introduce three methods to improve the mechanical and biomedical properties of CaSiO3 ceramics and scaffolds. Positive ions and polymer modification are two promising ways to improve the mechanical and biomedical properties of CaSiO3 ceramics and scaffolds for bone tissue regeneration.

  13. Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

    International Nuclear Information System (INIS)

    Chang, Yao-Feng; Zhou, Fei; Chen, Ying-Chen; Lee, Jack C.; Fowler, Burt

    2016-01-01

    Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO x )-based resistive switching (RS) memory using TiW/SiO x /TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO x -based RS memory. By using a conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO x -based RS memory

  14. AKT2 siRNA delivery with amphiphilic-based polymeric micelles show efficacy against cancer stem cells.

    Science.gov (United States)

    Rafael, Diana; Gener, Petra; Andrade, Fernanda; Seras-Franzoso, Joaquin; Montero, Sara; Fernández, Yolanda; Hidalgo, Manuel; Arango, Diego; Sayós, Joan; Florindo, Helena F; Abasolo, Ibane; Schwartz, Simó; Videira, Mafalda

    2018-11-01

    Development of RNA interference-based therapies with appropriate therapeutic window remains a challenge for advanced cancers. Because cancer stem cells (CSC) are responsible of sustaining the metastatic spread of the disease to distal organs and the progressive gain of resistance of advanced cancers, new anticancer therapies should be validated specifically for this subpopulation of cells. A new amphihilic-based gene delivery system that combines Pluronic ® F127 micelles with polyplexes spontaneously formed by electrostatic interaction between anionic siRNA and cationic polyethylenimine (PEI) 10K, was designed (PM). Resultant PM gather the requirements for an efficient and safe transport of siRNA in terms of its physicochemical characteristics, internalization capacity, toxicity profile and silencing efficacy. PM were loaded with a siRNA against AKT2, an important oncogene involved in breast cancer tumorigenesis, with a special role in CSC malignancy. Efficacy of siAKT2-PM was validated in CSC isolated from two breast cancer cell lines: MCF-7 and Triple Negative MDA-MB-231 corresponding to an aggressive subtype of breast cancer. In both cases, we observed significant reduction on cell invasion capacity and strong inhibition of mammosphere formation after treatment. These results prompt AKT2 inhibition as a powerful therapeutic target against CSC and pave the way to the appearance of more effective nanomedicine-based gene therapies aimed to prevent CSC-related tumor recurrence.

  15. State diagram of U-Al-Si as a basis for analysis of the processes in nuclear fuel compositions based on U(Al, Si)3 and U3Si compounds

    International Nuclear Information System (INIS)

    Chebotarev, N.T.; Konovalov, L.N.; Zhmak, V.A.; Chebotarev, Ya.N.

    1996-01-01

    Results of studies into the Al-UAl 3 -USi 3 -Si of the U-Al-Si ternary system are presented. It is established that phase equilibrium between the intermetallic compound U(Al, Si) 3 and the aluminium-silicon alloys may be presented in form of conodes on the isothermal cross-section of the state diagram. It is shown that the U(Al, Si) 3 intermetallic compound, containing up to 6.5 at.% silicon, interacts both with liquid and solid aluminium with the U(Al, Si) 4 phase formation [ru

  16. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  17. Si-based technologies for reduction of the pollutant leaching from landfills and mine tails.

    Science.gov (United States)

    Bocharnikova, E; Matichenkov, V; Jiang, J; Yuejin, C

    2017-07-01

    Monosilicic and polysilicic acids were shown to react with different types of the pollutants. The direction of these reactions can be managed by changing the monosilicic and polysilicic acid concentration in soil or water media. The objective of this study was to determine the effect of Si-treated calcium metallurgical slag and battery slag on the As, Se, Cd, Pb, Ni, Cr, and Hg mobility and bioavailability in mine tailings (Xikuangshan mine, Hunan, China). The results of column experiment showed that the Si-activated slags reduced leaching of As, Se, Cd, Pb, Ni, Cr, and Hg by 13-89% and transformed them into plant-unavailable forms. The greenhouse test has demonstrated that the Si-treated slags provided reinforced plant resistance to heavy metal toxicity and reduced pollutants in barley and pea leaves. Si-treated local solid slags could be used for creating the biogeochemical barriers on the pollutant streams from landfills or mine tailings sites.

  18. Thermal detection mechanism of SiC based hydrogen resistive gas sensors

    Science.gov (United States)

    Fawcett, Timothy J.; Wolan, John T.; Lloyd Spetz, Anita; Reyes, Meralys; Saddow, Stephen E.

    2006-10-01

    Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.

  19. SiGe-based re-engineering of electronic warfare subsystems

    CERN Document Server

    Lambrechts, Wynand

    2017-01-01

    This book equips readers with a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for the military purposes of electronic warfare and defensive countermeasures. The theoretical and technical background is extensively explained and all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne (including space) electronic warfare are addressed, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, sharing of information on its use in electronic warfare systems has to date been limited, especially in developing nations. This book will therefore be warmly welcomed as an engineering guideline that focuses especially on the speed and reliability of current-generation SiGe circuits and highlights emerging innov...

  20. One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials

    KAUST Repository

    Choi, Nam-Soon; Yao, Yan; Cui, Yi; Cho, Jaephil

    2011-01-01

    There has been tremendous interest in using nanomaterials for advanced Li-ion battery electrodes, particularly to increase the energy density by using high specific capacity materials. Recently, it was demonstrated that one dimensional (1D) Si

  1. A High-Efficiency Compact SiC-based Power Converter System, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Wide-bandgap SiC semiconductors have been recently investigated for use in power devices, because of their potential capabilities of operating at high power...

  2. A High-Efficiency Compact SiC-based Power Converter System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Wide bandgap SiC power devices have the potential for reliable operations at higher junction temperatures, higher voltages, higher frequencies and thus higher power...

  3. Oxidation of siloxanes during biogas combustion and nanotoxicity of Si-based particles released to the atmosphere.

    Science.gov (United States)

    Tansel, Berrin; Surita, Sharon C

    2014-01-01

    Siloxanes have been detected in the biogas produced at municipal solid waste landfills and wastewater treatment plants. When oxidized, siloxanes are converted to silicon oxides. The objectives of this study were to evaluate the transformation of siloxanes and potential nanotoxicity of Si-based particles released to the atmosphere from the gas engines which utilize biogas. Data available from nanotoxicity studies were used to assess the potential health risks associated with the inhalation exposure to Si-based nanoparticles. Silicon dioxide formed from siloxanes can range from 5 nm to about 100 nm in diameter depending on the combustion temperature and particle clustering characteristics. In general, silicon dioxide particles formed during from combustion process are typically 40-70 nm in diameter and can be described as fibrous dusts and as carcinogenic, mutagenic, astmagenic or reproductive toxic (CMAR) nanoparticles. Nanoparticles deposit in the upper respiratory system, conducting airways, and the alveoli. Size ranges between 5 and 50 nm show effective deposition in the alveoli where toxic effects are higher. In this study the quantities for the SiO₂ formed and release during combustion of biogas were estimated based on biogas utilization characteristics (gas compositions, temperature). The exposure to Si-based particles and potential effects in humans were analyzed in relation to their particle size, release rates and availability in the atmosphere. The analyses showed that about 54.5 and 73 kg/yr of SiO₂ can be released during combustion of biogas containing D4 and D5 at 14.1 mg/m(3) (1 ppm) and 15.1 mg/m(3) (1ppm), respectively, per MW energy yield. Copyright © 2013 Elsevier B.V. All rights reserved.

  4. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    International Nuclear Information System (INIS)

    Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

    2016-01-01

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm"3 size) with "2"2Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  5. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonghai [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Sun, Xishan [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Lou, Kai [Department of Electrical and Computer Engineering, Rice University, Houston, Tx (United States); Meier, Joseph [Department of Imaging Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Zhou, Rong; Yang, Chaowen [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Zhu, Xiaorong [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Shao, Yiping [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States)

    2016-04-21

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm{sup 3} size) with {sup 22}Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  6. Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

    Science.gov (United States)

    Rizal, C. S.; Niraula, B.

    2018-03-01

    A compact low power consuming asymmetric MZI based optical modulator with fast response time has been proposed on SOI platform. The geometrical and performance characteristics were analyzed in depth and optimized using coupled mode analysis and FDTD simulation tools, respectively. It was tested with and without implementation of thermo-optic (TO) effect. The device showed good frequency modulating characteristics when tested without the implementation of the TO effect. The fabricated device showed quality factor, Q ≈ 10,000, and this value is comparable to the Q of the device simulated with 25% transmission loss, showing FSR of 0.195 nm, FWHM ≈ 0.16 nm, and ER of 13 dB. With TO effect, it showed temperature sensitivity of 0.01 nm/°C and FSR of 0.19 nm. With the heater length of 4.18 mm, the device required 0.26 mW per π shift power with a switching voltage of 0.309 V, response time of 10 μ, and figure-of-merit of 2.6 mW μs. All of these characteristics make this device highly attractive for use in integrated Si photonics network as optical switch and wavelength modulator.

  7. Cost Evaluation with G4-ECONS Program for SI based Nuclear Hydrogen Production Plant

    International Nuclear Information System (INIS)

    Kim, Jong-ho; Lee, Ki-young; Kim, Yong-wan

    2014-01-01

    Contemporary hydrogen is production is primarily based on fossil fuels, which is not considered as environments friendly and economically efficient. To achieve the hydrogen economy, it is very important to produce a massive amount of hydrogen in a clean, safe and efficient way. Nuclear production of hydrogen would allow massive production of hydrogen at economic prices while avoiding environments pollution reducing the release of carbon dioxide. Nuclear production of hydrogen could thus become the enabling technology for the hydrogen economy. The economic assessment was performed for nuclear hydrogen production plant consisting of VHTR coupled with SI cycle. For the study, G4-ECONS developed by EMWG of GIF was appropriately modified to calculate the LUHC, assuming 36 months of plant construction time, 5 % of annual interest rate and 12.6 % of fixed charge rate. In G4-ECONS program, LUHC is calculated by the following formula; LUHC = (Annualized TCIC + Annualized O-M Cost + Annualized Fuel Cycle Cost + Annualized D-D Cost) / Annual Hydrogen Production Rate

  8. Characteristics of SiC neutron sensor spectrum unfolding process based on Bayesian inference

    Energy Technology Data Exchange (ETDEWEB)

    Cetnar, Jerzy; Krolikowski, Igor [Faculty of Energy and Fuels AGH - University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Ottaviani, L. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Lyoussi, A. [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance (France)

    2015-07-01

    This paper deals with SiC detector signal interpretation in neutron radiation measurements in mixed neutron gamma radiation fields, which is called the detector inverse problem or the spectrum unfolding, and it aims in finding a representation of the primary radiation, based on the measured detector signals. In our novel methodology we resort to Bayesian inference approach. In the developed procedure the resultant spectra is unfolded form detector channels reading, where the estimated neutron fluence in a group structure is obtained with its statistical characteristic comprising of standard deviation and correlation matrix. In the paper we present results of unfolding process for case of D-T neutron source in neutron moderating environment. Discussions of statistical properties of obtained results are presented as well as of the physical meaning of obtained correlation matrix of estimated group fluence. The presented works has been carried out within the I-SMART project, which is part of the KIC InnoEnergy R and D program. (authors)

  9. Valence band states in Si-based p-type delta-doped field effect transistors

    International Nuclear Information System (INIS)

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  10. Tailoring the chirality of light emission with spherical Si-based antennas.

    Science.gov (United States)

    Zambrana-Puyalto, Xavier; Bonod, Nicolas

    2016-05-21

    Chirality of light is of fundamental importance in several enabling technologies with growing applications in life sciences, chemistry and photodetection. Recently, some attention has been focused on chiral quantum emitters. Consequently, optical antennas which are able to tailor the chirality of light emission are needed. Spherical nanoresonators such as colloids are of particular interest to design optical antennas since they can be synthesized at a large scale and they exhibit good optical properties. Here, we show that these colloids can be used to tailor the chirality of a chiral emitter. To this purpose, we derive an analytic formalism to model the interaction between a chiral emitter and a spherical resonator. We then compare the performances of metallic and dielectric spherical antennas to tailor the chirality of light emission. It is seen that, due to their strong electric dipolar response, metallic spherical nanoparticles spoil the chirality of light emission by yielding achiral fields. In contrast, thanks to the combined excitation of electric and magnetic modes, dielectric Si-based particles feature the ability to inhibit or to boost the chirality of light emission. Finally, it is shown that dual modes in dielectric antennas preserve the chirality of light emission.

  11. A Method for Formulizing Disaster Evacuation Demand Curves Based on SI Model

    Directory of Open Access Journals (Sweden)

    Yulei Song

    2016-10-01

    Full Text Available The prediction of evacuation demand curves is a crucial step in the disaster evacuation plan making, which directly affects the performance of the disaster evacuation. In this paper, we discuss the factors influencing individual evacuation decision making (whether and when to leave and summarize them into four kinds: individual characteristics, social influence, geographic location, and warning degree. In the view of social contagion of decision making, a method based on Susceptible-Infective (SI model is proposed to formulize the disaster evacuation demand curves to address both social influence and other factors’ effects. The disaster event of the “Tianjin Explosions” is used as a case study to illustrate the modeling results influenced by the four factors and perform the sensitivity analyses of the key parameters of the model. Some interesting phenomena are found and discussed, which is meaningful for authorities to make specific evacuation plans. For example, due to the lower social influence in isolated communities, extra actions might be taken to accelerate evacuation process in those communities.

  12. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

    KAUST Repository

    Flemban, Tahani H.

    2017-09-19

    Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

  13. Optical spectra of composite silver-porous silicon (Ag-pSi) nanostructure based periodical lattice

    Science.gov (United States)

    Amedome Min-Dianey, Kossi Aniya; Zhang, Hao-Chun; Brohi, Ali Anwar; Yu, Haiyan; Xia, Xinlin

    2018-03-01

    Numerical finite differential time domain (FDTD) tools were used in this study for predicting the optical characteristics through the nanostructure of composite silver-porous silicon (Ag-pSi) based periodical lattice. This is aimed at providing an interpretation of the optical spectra at known porosity in improvement of the light manipulating efficiency through a proposed structure. With boundary conditions correctly chosen, the numerical simulation was achieved using FDTD Lumerical solutions. This was used to investigate the effect of porosity and the number of layers on the reflection, transmission and absorption characteristics through a proposed structure in a visible wavelength range of 400-750 nm. The results revealed that the higher the number of layers, the lower the reflection. Also, the reflection increases with porosity increase. The transmission characteristics were the inverse to those found in the case of reflection spectra and optimum transmission was attained at high number of layers. Also, increase in porosity results in reduced transmission. Increase in porosity as well as in the number of layers led to an increase in absorption. Therefore, absorption into such structure can be enhanced by elevating the number of layers and the degree of porosity.

  14. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  15. Synthesis of encapsulated pigments based on Fe, Co and Si by route of polymeric precursors

    International Nuclear Information System (INIS)

    Macedo, D.S.S.M.; Macedo Neto, O.C.; Paskocimas, C.A.; Varela, M.L.N.

    2012-01-01

    The objective is to apply the polymeric precursor method to obtain encapsulated pigments, the basis of oxides of iron and cobalt deposited on silica. The method has advantages such as reduction of time and reproducibility in the conventional methods, and also improves optical properties, thermal stability and morphology. The synthesis was based on the dissolution of the citric acid (complexing agent), addition of oxides of iron and cobalt (ions chromophores) polymerization of ethylene glycol and silica coating. The mixture was pre-calcined to form the precursor powder was analyzed by TG and DTA. Was then split, and calcined at different temperatures (700 ° C - 900 ° C) and analyzed by BET, DRX, MEV and UV-Visible. The pigments were stable thermally, with surface area ranging between 3,09 and 7,65 m² / g, formation of crystalline phases of cobalt ferrite (CoFe 2 O 4 ) and Cristobalite (SiO 2 ) and agglomerates of particles slightly rounded. (author)

  16. Preliminary Overview of a Helium Cooling System for the Secondary Helium Loop in VHTR-based SI Hydrogen Production Facilities

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Youngjoon; Cho, Mintaek; Kim, Dahee; Lee, Taehoon; Lee, Kiyoung; Kim, Yongwan [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Nuclear hydrogen production facilities consist of a very high temperature gas-cooled nuclear reactor (VHTR) system, intermediate heat exchanger (IHX) system, and a sulfur-iodine (SI) thermochemical process. This study focuses on the coupling system between the IHX system and SI thermochemical process. To prevent the propagation of the thermal disturbance owing to the abnormal operation of the SI process components from the IHX system to the VHTR system, a helium cooling system for the secondary helium of the IHX is required. In this paper, the helium cooling system has been studied. The temperature fluctuation of the secondary helium owing to the abnormal operation of the SI process was then calculated based on the proposed coupling system model. Finally, the preliminary conceptual design of the helium cooling system with a steam generator and forced-draft air-cooled heat exchanger to mitigate the thermal disturbance has been carried out. A conceptual flow diagram of a helium cooling system between the IHX and SI thermochemical processes in VHTR-based SI hydrogen production facilities has been proposed. A helium cooling system for the secondary helium of the IHX in this flow diagram prevents the propagation of the thermal disturbance from the IHX system to the VHTR system, owing to the abnormal operation of the SI process components. As a result of a dynamic simulation to anticipate the fluctuations of the secondary helium temperature owing to the abnormal operation of the SI process components with a hydrogen production rate of 60 mol·H{sub 2}/s, it is recommended that the maximum helium cooling capacity to recover the normal operation temperature of 450 .deg. C is 31,933.4 kJ/s. To satisfy this helium cooling capacity, a U-type steam generator, which has a heat transfer area of 12 m{sup 2}, and a forced-draft air-cooled condenser, which has a heat transfer area of 12,388.67 m{sup 2}, are required for the secondary helium cooling system.

  17. Gene silencing activity of siRNA polyplexes based on thiolated N,N,N-trimethylated chitosan.

    Science.gov (United States)

    Varkouhi, Amir K; Verheul, Rolf J; Schiffelers, Raymond M; Lammers, Twan; Storm, Gert; Hennink, Wim E

    2010-12-15

    N,N,N-Trimethylated chitosan (TMC) is a biodegradable polymer emerging as a promising nonviral vector for nucleic acid and protein delivery. In the present study, we investigated whether the introduction of thiol groups in TMC enhances the extracellular stability of the complexes based on this polymer and promotes the intracellular release of siRNA. The gene silencing activity and the cellular cytotoxicity of polyplexes based on thiolated TMC were compared with those based on the nonthiolated counterpart and the regularly used lipidic transfection agent Lipofectamine. Incubation of H1299 human lung cancer cells expressing firefly luciferase with siRNA/thiolated TMC polyplexes resulted in 60-80% gene silencing activity, whereas complexes based on nonthiolated TMC showed less silencing (40%). The silencing activity of the complexes based on Lipofectamine 2000 was about 60-70%. Importantly, the TMC-SH polyplexes retained their silencing activity in the presence of hyaluronic acid, while nonthiolated TMC polyplexes hardly showed any silencing activity, demonstrating their stability against competing anionic macromolecules. Under the experimental conditions tested, the cytotoxicity of the thiolated and nonthiolated siRNA complexes was lower than those based on Lipofectamine. Given the good extracellular stability and good silencing activity, it is concluded that polyplexes based on TMC-SH are attractive systems for further in vivo evaluations.

  18. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Rasoulzadeh Zali, Aref; Chung, Il-Sug

    2017-01-01

    We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelen......We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered...

  19. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    OpenAIRE

    Pinzón, Cristian; de Paz Santana, Yanira; Bajo Pérez, Javier; Abraham, Ajith P.; Corchado Rodríguez, Juan M.

    2009-01-01

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a k...

  20. Atomic layer deposition of W - based layers on SiO2

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

    2003-01-01

    W<Si> and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W<Si> films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

  1. Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

    Science.gov (United States)

    Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

    2018-02-01

    The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

  2. Effects of C and Si on strain aging of strain-based API X60 pipeline steels

    Science.gov (United States)

    Sung, Hyo Kyung; Lee, Dong Ho; Lee, Sunghak; Lee, Byeong-Joo; Hong, Seung-Pyo; Kim, Young-Woon; Yoo, Jang Yong; Hwang, Byoungchul; Shin, Sang Yong

    2017-05-01

    Four types of strain-based API X60 pipeline steels were fabricated by varying the C and Si contents, and the effects of C and Si on strain aging were investigated. The 0.05 wt% C steels consisted mainly of polygonal ferrite (PF), whereas the 0.08 wt% C steels consisted of acicular ferrite (AF). The volume fraction of AF increased with increasing C content because C is an austenite stabilizer element. The volume fractions of bainitic ferrite (BF) of the 0.15 wt% Si steels were higher than those of the 0.25 wt% Si steels, whereas the volume fractions of the secondary phases were lower. From the tensile properties before and after the aging process of the strainbased API X60 pipeline steels, the yield strength increased and the uniform and total elongation decreased, which is the strain aging effect. The strain aging effect in the strain-based API X60 pipeline steels was minimized when the volume fraction of AF was increased and secondary phases were distributed uniformly. On the other hand, an excessively high C content formed fine precipitates, and the strain aging effect occurred because of the interactions among dislocations and fine precipitates.

  3. Computational study of AuSi{sub n} (n=1-9) nanoalloy clusters invoking DFT based descriptors

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, Prabhat; Kumar, Ajay [Department of Mechatronics, Manipal University Jaipur Dehmi Kalan, Jaipur-303007 (India); Chakraborty, Tanmoy, E-mail: tanmoy.chakraborty@jaipur.manipal.edu, E-mail: tanmoychem@gmail.com [Department of Chemistry, Manipal University Jaipur Dehmi Kalan, Jaipur-303007 (India)

    2016-04-13

    Nanoalloy clusters formed between Au and Si are topics of great interest today from both scientific and technological point of view. Due to its remarkable catalytic, electronic, mechanical and magnetic properties Au-Si nanoalloy clusters have extensive applications in the field of microelectronics, catalysis, biomedicine, and jewelry industry. Density Functional Theory (DFT) is a new paradigm of quantum mechanics, which is very much popular to study the electronic properties of materials. Conceptual DFT based descriptors have been invoked to correlate the experimental properties of nanoalloy clusters. In this venture, we have systematically investigated AuSi{sub n} (n=1-9) nanoalloy clusters in the theoretical frame of the B3LYP exchange correlation. The experimental properties of AuSi{sub n} (n=1-9) nanoalloy clusters are correlated in terms of DFT based descriptors viz. HOMO-LUMO gap, Electronegativity (χ), Global Hardness (η), Global Softness (S) and Electrophilicity Index (ω). The calculated HOMO-LUMO gap exhibits interesting odd-even alteration behaviour, indicating that even numbered clusters possess higher stability as compare to their neighbour odd numbered clusters. This study also reflects a very well agreement between experimental bond length and computed data.

  4. Thermal expansion and elastic moduli of the silicide based intermetallic alloys Ti5Si3(X) and Nb5Si3

    International Nuclear Information System (INIS)

    Zhang, L.; Wu, J.

    1997-01-01

    Silicides are among those potential candidates for high temperature application because of their high melting temperature, low density and good oxidation resistance. Recent interest is focused on molybdenum silicides and titanium silicides. Extensive investigation has been carried out on MoSi 2 , yet comparatively less work was performed on titanium silicides such as Ti 5 Si 3 and Ti 3 and TiSi 2 which are of lower density than MoSi 2 . Fundamental understanding of the titanium silicides' properties for further evaluation their potential for practical application are thus needed. The thermal expansion coefficients and elastic moduli of intermetallic compounds are two properties important for evaluation as a first step. The thermal expansion determines the possible stress that might arise during cooling for these high melting point compounds, which is crucial to the preparation of defect free specimens; and the elastic moduli are usually reflections of the cohesion in crystal. In Frommeyer's work and some works afterwards, the coefficients of thermal expansion were measured on both polycrystalline and single crystal Ti 5 Si 3 . The elastic modulus of polycrystalline Ti 5 Si 3 was measured by Frommeyer and Rosenkranz. However, in the above works, the referred Ti 5 Si 3 was the binary one, no alloying effect has been reported on this matter. Moreover, the above parameters (coefficient of thermal expansion and elastic modulus) of Nb 5 Si 3 remain unreported so far. In this paper, the authors try to extend the knowledge of alloyed Ti 5 Si 3 compounds with Nb and Cr additions. Results on the coefficients of thermal expansion and elastic moduli of Ti 5 Si 3 compounds and Nb 5 Si 3 are presented and the discussion is focused on the alloying effect

  5. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  6. SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION; F

    International Nuclear Information System (INIS)

    Paul K.T. Liu

    2001-01-01

    This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction

  7. Factors influencing shape memory effect and phase transformation behaviour of Fe-Mn-Si based shape memory alloys

    International Nuclear Information System (INIS)

    Li, H.; Dunne, D.; Kennon, N.

    1999-01-01

    The objective of this research work was to investigate the factors influencing the shape memory effect and phase transformation behaviour of three Fe-Mn-Si based shape memory alloys: Fe-28Mn-6Si, Fe-13Mn-5Si-10Cr-6Ni and Fe-20Mn-6Si-7Cr-1Cu. The research results show that the shape memory capacity of Fe-Mn-Si based shape memory alloys varies with annealing temperature, and this effect can be explained in terms of the effect of annealing on γ ε transformation. The nature and concentration of defects in austenite are strongly affected by annealing conditions. A high annealing temperature results in a low density of stacking faults, leading to a low nucleation rate during stress induced γ→ε transformation. The growth of ε martensite plates is favoured rather than the formation of new ε martensite plates. Coarse martensite plates produce high local transformation strains which can be accommodated by local slip deformation, leading to a reduction in the reversibility of the martensitic transformation and to a degradation of the shape memory effect. Annealing at low temperatures (≤673 K) for reasonable times does not eliminate complex defects (dislocation jogs, kinks and vacancy clusters) created by hot and cold working strains. These defects can retard the movement and rearrangement of Shockley partial dislocations, i.e. suppress γ→ε transformation, also leading to a degradation of shape memory effect. Annealing at about 873 K was found to be optimal to form the dislocation structures which are favourable for stress induced martensitic transformation, thus resulting in the best shape memory behaviour. (orig.)

  8. A comprehensive study of soft magnetic materials based on FeSi spheres and polymeric resin modified by silica nanorods

    International Nuclear Information System (INIS)

    Strečková, M.; Füzer, J.; Kobera, L.; Brus, J.; Fáberová, M.; Bureš, R.; Kollár, P.; Lauda, M.; Medvecký, Ĺ.; Girman, V.; Hadraba, H.; Bat'ková, M.; Bat'ko, I.

    2014-01-01

    A novel soft magnetic composite (SMC) based on spherical FeSi particles precisely covered by hybrid phenolic resin was designed. The hybrid resin including silica nano-rods chemically incorporated into the phenolic polymer matrix was prepared by the modified sol–gel method. A chemical bridge connecting silica nano-rods with the base polymeric net was verified by FTIR, 13 C and 29 Si NMR spectroscopy, whereas the shape and size of silica nano-rods were determined by TEM. It is shown that the modification of polymeric resin by silica nano-rods generally leads to the improved thermal and mechanical properties of the final samples. The hybrid resin serves as a perfect insulating coating deposited on FeSi particles and the core–shell particles can be further compacted by standard powder metallurgy methods in order to prepare final samples for mechanical, electric and magnetic testing. SEM images evidence negligible porosity, uniform distribution of the hybrid resin around FeSi particles, as well as, dimensional shape stability of the final samples after thermal treatment. The hardness, flexural strength and density of the final samples are comparable to the sintered SMCs, but they simultaneously exhibit much higher specific resistivity along with only slightly lower coercivity and permeability. - Highlights: • Soft magnetic composites are designed for electrotechnical applications. • Electroinsulating layer consists of phenolic resin modified with silica nano-rods. • NMR, FTIR and DSC analysis is used to characterize hybrid resin. • Spherical Fe–Si particles covered by hybrid resin form a core–shell composite. • Mechanical, electrical and magnetic properties are described in detail

  9. Oxidation and creep behavior of Mo*5*Si*3* based materials

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Mitch [Iowa State Univ., Ames, IA (United States)

    1995-06-19

    Mo5Si3 shows promise as a high temperature creep resistant material. The high temperature oxidation resistance of Mo5Si3 has been found to be poor, however, limiting its use in oxidizing atmospheres. Undoped Mo5Si3 exhibits mass loss in the temperature range 800°-1200°C due to volatilization of molybdenum oxide, indicating that the silica scale does not provide a passivating layer. The addition of boron results in protective scale formation and parabolic oxidation kinetics in the temperature range of 1050{degrees}-1300°C. The oxidation rate of Mo5Si3 was decreased by 5 orders of magnitude at 1200°C by doping with less than two weight percent boron. Boron doping eliminates catastrophic "pest" oxidation at 800°C. The mechanism for improved oxidation resistance of boron doped Mo5Si3 is due to scale modification by boron.

  10. Iron Intermetallic Phases in the Alloy Based on Al-Si-Mg by Applying Manganese

    Directory of Open Access Journals (Sweden)

    Podprocká R.

    2017-09-01

    Full Text Available Manganese is an effective element used for the modification of needle intermetallic phases in Al-Si alloy. These particles seriously degrade mechanical characteristics of the alloy and promote the formation of porosity. By adding manganese the particles are being excluded in more compact shape of “Chinese script” or skeletal form, which are less initiative to cracks as Al5FeSi phase. In the present article, AlSi7Mg0.3 aluminium foundry alloy with several manganese content were studied. The alloy was controlled pollution for achieve higher iron content (about 0.7 wt. % Fe. The manganese were added in amount of 0.2 wt. %, 0.6 wt. %, 1.0 wt. % and 1.4 wt. %. The influence of the alloying element on the process of crystallization of intermetallic phases were compared to microstructural observations. The results indicate that increasing manganese content (> 0.2 wt. % Mn lead to increase the temperature of solidification iron rich phase (TAl5FeSi and reduction this particles. The temperature of nucleation Al-Si eutectic increase with higher manganese content also. At adding 1.4 wt. % Mn grain refinement and skeleton particles were observed.

  11. Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

    Directory of Open Access Journals (Sweden)

    Jakubek J.

    2012-10-01

    Full Text Available We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile using light-guides. An alternative readout geometry was designed in an effort to increase the fraction of scintillation light detected by the SiPMs. The new prototype uses a larger SiPM array to cover the entire top face of the tile. This paper details the comparative performance of the two prototype designs. A deuterium-tritium (DT fast-neutron source was used to compare the relative light collection efficiency of the two designs. A collimated UV light source was scanned across the detector face to map the uniformity. The new prototype was found to have 9.5 times better light collection efficiency over the original design. Both prototypes exhibit spatial non-uniformity in their response. Methods of correcting this non-uniformity are discussed.

  12. VHTR-based Nuclear Hydrogen Plant Analysis for Hydrogen Production with SI, HyS, and HTSE Facilities

    International Nuclear Information System (INIS)

    Shin, Youngjoon; Lee, Taehoon; Lee, Kiyoung; Kim, Minhwan

    2016-01-01

    In this paper, analyses of material and heat balances on the SI, HyS, and HTSE processes coupled to a Very High Temperature gas-cooled Reactor (VHTR) were performed. The hydrogen production efficiency including the thermal to electric energy ratio demanded from each process is found and the normalized evaluation results obtained from three processes are compared to each other. The currently technological issues to maintain the long term continuous operation of each process will be discussed at the conference site. VHTR-based nuclear hydrogen plant analysis for hydrogen production with SI, HyS, and HTSE facilities has been carried out to determine the thermal efficiency. It is evident that the thermal to electrical energy ratio demanded from each hydrogen production process is an important parameter to select the adequate process for hydrogen production. To improve the hydrogen production efficiency in the SI process coupled to the VHTR without electrical power generation, the demand of electrical energy in the SI process should be minimized by eliminating an electrodialysis step to break through the azeotrope of the HI/I_2/H_2O ternary aqueous solution

  13. Transoral robotic surgery for the base of tongue squamous cell carcinoma: a preliminary comparison between da Vinci Xi and Si.

    Science.gov (United States)

    Alessandrini, Marco; Pavone, Isabella; Micarelli, Alessandro; Caporale, Claudio

    2017-09-13

    Considering the emerging advantages related to da Vinci Xi robotic platform, the aim of this study is to compare for the first time the operative outcomes of this tool to the previous da Vinci Si during transoral robotic surgery (TORS), both performed for squamous cell carcinomas (SCC) of the base of tongue (BOT). Intra- and peri-operative outcomes of eight patients with early stage (T1-T2) of the BOT carcinoma and undergoing TORS by means of the da Vinci Xi robotic platform (Xi-TORS) are compared with the da Vinci Si group ones (Si-TORS). With respect to Si-TORS group, Xi-TORS group demonstrated a significantly shorter overall operative time, console time, and intraoperative blood loss, as well as peri-operative pain intensity and length of mean hospital stays and nasogastric tube positioning. Considering recent advantages offered by surgical robotic techniques, the da Vinci Xi Surgical System preliminary outcomes could suggest its possible future routine implementation in BOT squamous cell carcinoma procedures.

  14. Optimal Hydrophobicity in Ring-Opening Metathesis Polymerization-Based Protein Mimics Required for siRNA Internalization.

    Science.gov (United States)

    deRonde, Brittany M; Posey, Nicholas D; Otter, Ronja; Caffrey, Leah M; Minter, Lisa M; Tew, Gregory N

    2016-06-13

    Exploring the role of polymer structure for the internalization of biologically relevant cargo, specifically siRNA, is of critical importance to the development of improved delivery reagents. Herein, we report guanidinium-rich protein transduction domain mimics (PTDMs) based on a ring-opening metathesis polymerization scaffold containing tunable hydrophobic moieties that promote siRNA internalization. Structure-activity relationships using Jurkat T cells and HeLa cells were explored to determine how the length of the hydrophobic block and the hydrophobic side chain compositions of these PTDMs impacted siRNA internalization. To explore the hydrophobic block length, two different series of diblock copolymers were synthesized: one series with symmetric block lengths and one with asymmetric block lengths. At similar cationic block lengths, asymmetric and symmetric PTDMs promoted siRNA internalization in the same percentages of the cell population regardless of the hydrophobic block length; however, with 20 repeat units of cationic charge, the asymmetric block length had greater siRNA internalization, highlighting the nontrivial relationships between hydrophobicity and overall cationic charge. To further probe how the hydrophobic side chains impacted siRNA internalization, an additional series of asymmetric PTDMs was synthesized that featured a fixed hydrophobic block length of five repeat units that contained either dimethyl (dMe), methyl phenyl (MePh), or diphenyl (dPh) side chains and varied cationic block lengths. This series was further expanded to incorporate hydrophobic blocks consisting of diethyl (dEt), diisobutyl (diBu), and dicyclohexyl (dCy) based repeat units to better define the hydrophobic window for which our PTDMs had optimal activity. High-performance liquid chromatography retention times quantified the relative hydrophobicities of the noncationic building blocks. PTDMs containing the MePh, diBu, and dPh hydrophobic blocks were shown to have superior

  15. Activatable Optical Imaging with a Silica-Rhodamine Based Near Infrared (SiR700) Fluorophore: A comparison with cyanine based dyes

    Science.gov (United States)

    McCann, Thomas E.; Kosaka, Nobuyuki; Koide, Yuichiro; Mitsunaga, Makoto; Choyke, Peter L.; Nagano, Tetsuo; Urano, Yasuteru; Kobayashi, Hisataka

    2011-01-01

    Optical imaging is emerging as an important tool to visualize tumors. However, there are many potential choices among the available fluorophores. Optical imaging probes that emit in the visible range can image superficial tumors with high quantum yields, however, if deeper imaging is needed then near infrared (NIR) fluorophores are necessary. Most commercially available NIR fluorophores are cyanine based and are prone to non-specific binding and relatively limited photostability. Silica-containing rhodamine (SiR) fluorophores represent a new class of NIR fluorophores, which permit photoactivation via H-dimer formation as well as demonstrate improved photostability. This permits higher tumor-to-background ratios (TBRs) to be achieved over longer periods of time. Here, we compared an avidin conjugated with SiR700 (Av-SiR700) to similar compounds based on cyanine dyes (Av-Cy5.5 and Av-Alexa Fluor 680) in a mouse tumor model of ovarian cancer metastasis. We found that the Av-SiR700 probe demonstrated superior quenching enabling activation after binding-internalization to the target cell. As a result, Av-SiR700 had higher TBRs compared to Av-Cy5.5, and better biostability compared to Av-Alexa Fluor 680. PMID:22034863

  16. Crack and wear behavior of SiC particulate reinforced aluminium based metal matrix composite fabricated by direct metal laser sintering process

    International Nuclear Information System (INIS)

    Ghosh, Subrata Kumar; Saha, Partha

    2011-01-01

    In this investigation, crack density and wear performance of SiC particulate (SiCp) reinforced Al-based metal matrix composite (Al-MMC) fabricated by direct metal laser sintering (DMLS) process have been studied. Mainly, size and volume fraction of SiCp have been varied to analyze the crack and wear behavior of the composite. The study has suggested that crack density increases significantly after 15 volume percentage (vol.%) of SiCp. The paper has also suggested that when size (mesh) of reinforcement increases, wear resistance of the composite drops. Three hundred mesh of SiCp offers better wear resistance; above 300 mesh the specific wear rate increases significantly. Similarly, there has been no improvement of wear resistance after 20 vol.% of reinforcement. The scanning electron micrographs of the worn surfaces have revealed that during the wear test SiCp fragments into small pieces which act as abrasives to result in abrasive wear in the specimen.

  17. The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol

    International Nuclear Information System (INIS)

    Li Yan; Liu Yuling; Wang Aochen; Yang Zhixin; Sun Mingbin; Cheng Chuan; Zhang Yufeng; Zhang Nannan

    2014-01-01

    There is a lot of hydroxyl on the surface of nano SiO 2 sol used as an abrasive in the chemical mechanical planarization (CMP) process, and the chemical reaction activity of the hydroxyl is very strong due to the nano effect. In addition to providing a mechanical polishing effect, SiO 2 sol is also directly involved in the chemical reaction. The stability of SiO 2 sol was characterized through particle size distribution, zeta potential, viscosity, surface charge and other parameters in order to ensure that the chemical reaction rate in the CMP process, and the surface state of the copper film after CMP was not affected by the SiO 2 sol. Polarization curves and corrosion potential of different concentrations of SiO 2 sol showed that trace SiO 2 sol can effectively weaken the passivation film thickness. In other words, SiO 2 sol accelerated the decomposition rate of passive film. It was confirmed that the SiO 2 sol as reactant had been involved in the CMP process of copper film as reactant by the effect of trace SiO 2 sol on the removal rate of copper film in the CMP process under different conditions. In the CMP process, a small amount of SiO 2 sol can drastically alter the chemical reaction rate of the copper film, therefore, the possibility that Cu/SiO 2 as a catalytic system catalytically accelerated the chemical reaction in the CMP process was proposed. According to the van't Hoff isotherm formula and the characteristics of a catalyst which only changes the chemical reaction rate with out changing the total reaction standard Gibbs free energy, factors affecting the Cu/SiO 2 catalytic reaction were derived from the decomposition rate of Cu (OH) 2 and the pH value of the system, and then it was concluded that the CuSiO 3 as intermediates of Cu/SiO 2 catalytic reaction accelerated the chemical reaction rate in the CMP process. It was confirmed that the Cu/SiO 2 catalytic system generated the intermediate of the catalytic reaction (CuSiO 3 ) in the CMP process

  18. Spray cast Al-Si base alloys for stiffness and fatigue strength requirements

    International Nuclear Information System (INIS)

    Courbiere, M.; Mocellin, A.

    1993-01-01

    Hypereutectic AlSiFe spray-cast alloys exhibit properties similar to those of metal-matrix composite (MMC's) : high Young's modulus and a low coefficient of thermal expansion. These physical properties can be adjusted by changing the Si content of the alloy. The refinement of the microstructure is produced by formation of a large amount of nuclei in the spray. Consolidation done by extrusion (bars, tubes or profiles) and/or forging leads to high mechanical properties, especially very good dynamic properties. High fatigue properties coupled with high modulus, good high temperature behaviour and low thermal expansion, allow their use for applications in the automotive industry. In opposition to MMC's, these materials present the advantage of easy recycling and easy machinability as it is the case for the conventional AlSi alloys. The low oxygen content allows quality joining with conventional arc welding techniques. (orig.)

  19. Effect of Rare Earth Metals on the Microstructure of Al-Si Based Alloys

    Directory of Open Access Journals (Sweden)

    Saleh A. Alkahtani

    2016-01-01

    Full Text Available The present study was performed on A356 alloy [Al-7 wt %Si 0.0.35 wt %Mg]. To that La and Ce were added individually or combined up to 1.5 wt % each. The results show that these rare earth elements affect only the alloy melting temperature with no marked change in the temperature of Al-Si eutectic precipitation. Additionally, rare earth metals have no modification effect up to 1.5 wt %. In addition, La and Ce tend to react with Sr leading to modification degradation. In order to achieve noticeable modification of eutectic Si particles, the concentration of rare earth metals should exceed 1.5 wt %, which simultaneously results in the precipitation of a fairly large volume fraction of insoluble intermetallics. The precipitation of these complex intermetallics is expected to have a negative effect on the alloy performance.

  20. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

    International Nuclear Information System (INIS)

    Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

    2010-01-01

    A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. A novel, SiPM-array-based, monolithic scintillator detector for PET

    International Nuclear Information System (INIS)

    Schaart, Dennis R; Dam, Herman T van; Seifert, Stefan; Beekman, Freek J; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert

    2009-01-01

    Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e.g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as avalanche photodiodes. Here we present a novel detector design with DOI correction, in which a position-sensitive SiPM array is used to read out a monolithic scintillator. Initial characterization of a prototype detector consisting of a 4 x 4 SiPM array coupled to either the front or back surface of a 13.2 mm x 13.2 mm x 10 mm LYSO:Ce 3+ crystal shows that front-side readout results in significantly better performance than conventional back-side readout. Spatial resolutions 2 detector, equals 960 ps FWHM.

  2. Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding.

    Science.gov (United States)

    Wang, Ke; Wang, Hailin; Zhu, Guangzhi; Zhu, Xiao

    2017-02-10

    A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC), and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC) using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

  3. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

  4. Control of SiC Based Front-End Rectifier under Unbalanced Supply Voltage

    DEFF Research Database (Denmark)

    Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh

    2015-01-01

    A voltage source converter is used as a front end converter typically. In this paper, a converter which is realized using SiC MOSFET is considered. Due to SiC MOSFET, a switching frequency more than 50 kHz can be achieved. This can help increasing the current control loop bandwidth, which is not ...... together with a positive-sequence current controller for the front-end rectifier. A gain in the feedforward term can be changed to control the negative-sequence current. Simulation results are presented to verify the theory....

  5. An Au/Si hetero-nanorod-based biosensor for Salmonella detection

    Energy Technology Data Exchange (ETDEWEB)

    Fu Junxue; Zhao Yiping [Physics and Astronomy Department, University of Georgia, Athens, GA 30602 (United States); Park, Bosoon; Siragusa, Greg [USDA, ARS, Russell Research Center, Athens, GA 30605 (United States); Jones, Les; Tripp, Ralph [Department of Infectious Diseases, College of Veterinary Medicine, University of Georgia, Athens, GA 30602 (United States); Cho, Yong-Jin [Korea Food Research Institute, Songnam (Korea, Republic of)], E-mail: zhaoy@physast.uga.edu

    2008-04-16

    We present a novel and effective food-borne bacteria detection method. A hetero-structured silicon/gold nanorod array fabricated by the glancing angle deposition method is functionalized with anti-Salmonella antibodies and organic dye molecules. Due to the high aspect ratio nature of the Si nanorods, dye molecules attached to the Si nanorods produce an enhanced fluorescence upon capture and detection of Salmonella. This bio-functional hetero-nanorod detection method has great potential in the food safety industry as well as in biomedical diagnostics.

  6. Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiOx:H

    International Nuclear Information System (INIS)

    Medvedev, A.V.; Feoktistov, N.A.; Pevtsov, A.B.; Golubev, V.G.

    2005-01-01

    Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO x :H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge

  7. ''Some features of γ-ε martensitic transformation and shape memory effect in Fe-Mn-Si based alloys''

    International Nuclear Information System (INIS)

    Gulyaev, A.A.

    1995-01-01

    In the present paper several important aspects concerning the shape memory behavior of the ε-martensite in the cost-saving Fe-Mn-Si-based alloys and its application are reported. Some kinetic features of the γ-ε martensitic transformation are discussed. The effects of the composition, volume change induced by the transformation, strength of austenite, temperature of pre strain on the shape memory effect have been investigated. (orig.)

  8. A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

    International Nuclear Information System (INIS)

    Qiang Lei; Yao Ruo-He

    2012-01-01

    Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290-360 K, and the results fit well with the experimental data

  9. Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications

    Science.gov (United States)

    Wang, Chao; Song, Bing; Li, Qingjiang; Zeng, Zhongming

    2018-03-01

    We herein present a novel unidirectional threshold selector for cross-point bipolar RRAM array. The proposed Ag/amorphous Si based threshold selector showed excellent threshold characteristics in positive field, such as high selectivity ( 105), steep slope (type RRAM. By integrating a bipolar RRAM device with the selector, experiments showed that the undesired sneak was significantly suppressed, indicating its potentiality for high-density integrated nonvolatile memory applications.

  10. Mechanism-Based FE Simulation of Tool Wear in Diamond Drilling of SiCp/Al Composites.

    Science.gov (United States)

    Xiang, Junfeng; Pang, Siqin; Xie, Lijing; Gao, Feinong; Hu, Xin; Yi, Jie; Hu, Fang

    2018-02-07

    The aim of this work is to analyze the micro mechanisms underlying the wear of macroscale tools during diamond machining of SiC p /Al6063 composites and to develop the mechanism-based diamond wear model in relation to the dominant wear behaviors. During drilling, high volume fraction SiC p /Al6063 composites containing Cu, the dominant wear mechanisms of diamond tool involve thermodynamically activated physicochemical wear due to diamond-graphite transformation catalyzed by Cu in air atmosphere and mechanically driven abrasive wear due to high-frequency scrape of hard SiC reinforcement on tool surface. An analytical diamond wear model, coupling Usui abrasive wear model and Arrhenius extended graphitization wear model was proposed and implemented through a user-defined subroutine for tool wear estimates. Tool wear estimate in diamond drilling of SiC p /Al6063 composites was achieved by incorporating the combined abrasive-chemical tool wear subroutine into the coupled thermomechanical FE model of 3D drilling. The developed drilling FE model for reproducing diamond tool wear was validated for feasibility and reliability by comparing numerically simulated tool wear morphology and experimentally observed results after drilling a hole using brazed polycrystalline diamond (PCD) and chemical vapor deposition (CVD) diamond coated tools. A fairly good agreement of experimental and simulated results in cutting forces, chip and tool wear morphologies demonstrates that the developed 3D drilling FE model, combined with a subroutine for diamond tool wear estimate can provide a more accurate analysis not only in cutting forces and chip shape but also in tool wear behavior during drilling SiC p /Al6063 composites. Once validated and calibrated, the developed diamond tool wear model in conjunction with other machining FE models can be easily extended to the investigation of tool wear evolution with various diamond tool geometries and other machining processes in cutting different

  11. Structural and magnetic characterization of Fe2CrSi Heusler alloy nanoparticles as spin injectors and spin based sensors

    Science.gov (United States)

    Saravanan, G.; Asvini, V.; Kalaiezhily, R. K.; Parveen, I. Mubeena; Ravichandran, K.

    2018-05-01

    Half-metallic ferromagnetic [HMF] nanoparticles are of considerable interest in spintronics applications due to their potential use as a highly spin polarized current source. HMF exhibits a semiconductor in one spin band at the Fermi level Ef and at the other spin band they poses strong metallic nature which shows 100 % spin polarization at Ef. Fe based full Heusler alloys are primary interest due to high Curie temperature. Fe2CrSi Heusler alloys are synthesized using metallic powders of Fe, Cr and Si by mechanical alloying method. X-Ray diffractions studies were performed to analyze the structural details of Fe2CrSi nanoparticles with High resolution scanning electron microscope (HRSEM) studies for the morphological details of nanoparticles and magnetic properties were studied using Vibrating sample magnetometer (VSM). XRD Data analysis conforms the Heusler alloy phase showing the existence of L21 structure. Magnetic properties are measured for synthesized samples exhibiting a soft magnetic property possessing low coercivity (HC = 60.5 Oe) and saturation magnetic moment of Fe2CrSi is 3.16 µB, which is significantly higher than the ideal value of 2 µB from the Slater-Pauling rule due to room temperature measurement. The change in magnetic properties are half-metallic nature of Fe2CrSi is due to the shift of the Fermi level with respect to the gap were can be used as spin sensors and spin injectors in magnetic random access memories and other spin dependent devices.

  12. Processing, Microstructure and Creep Behavior of Mo-Si-B-Based Intermetallic Alloys for Very High Temperature Structural Applications

    Energy Technology Data Exchange (ETDEWEB)

    Vijay Vasudevan

    2008-03-31

    This research project is concerned with developing a fundamental understanding of the effects of processing and microstructure on the creep behavior of refractory intermetallic alloys based on the Mo-Si-B system. In the first part of this project, the compression creep behavior of a Mo-8.9Si-7.71B (in at.%) alloy, at 1100 and 1200 C was studied, whereas in the second part of the project, the constant strain rate compression behavior at 1200, 1300 and 1400 C of a nominally Mo-20Si-10B (in at.%) alloy, processed such as to yield five different {alpha}-Mo volume fractions ranging from 5 to 46%, was studied. In order to determine the deformation and damage mechanisms and rationalize the creep/high temperature deformation data and parameters, the microstructure of both undeformed and deformed samples was characterized in detail using x-ray diffraction, scanning electron microscopy (SEM) with back scattered electron imaging (BSE) and energy dispersive x-ray spectroscopy (EDS), electron back scattered diffraction (EBSD)/orientation electron microscopy in the SEM and transmission electron microscopy (TEM). The microstructure of both alloys was three-phase, being composed of {alpha}-Mo, Mo{sub 3}Si and T2-Mo{sub 5}SiB{sub 2} phases. The values of stress exponents and activation energies, and their dependence on microstructure were determined. The data suggested the operation of both dislocation as well as diffusional mechanisms, depending on alloy, test temperature, stress level and microstructure. Microstructural observations of post-crept/deformed samples indicated the presence of many voids in the {alpha}-Mo grains and few cracks in the intermetallic particles and along their interfaces with the {alpha}-Mo matrix. TEM observations revealed the presence of recrystallized {alpha}-Mo grains and sub-grain boundaries composed of dislocation arrays within the grains (in Mo-8.9Si-7.71B) or fine sub-grains with a high density of b = 1/2<111> dislocations (in Mo-20Si-10B), which

  13. Single layer and multilayer vacuum-arc coatings based on the nitride TiAlSiYN: composition, structure, properties

    International Nuclear Information System (INIS)

    Beresnev, V.M.; Litovchenko, S.V.; Nemchenko, U.S.; Srebnyuk, P.A.; Mazilin, B.A.; Sobol, O.V.; Mejlekhov, A.A.; Barmin, A.E.; Serenko, TA.; Pogrebnyak, A.D.; Ivanov, O.N.; Kritsyna, E.V.; Stolbovoj, V.A.; Novikov, V.Yu.; Malikov, L.V.

    2017-01-01

    Using high-technological vacuum-arc evaporation in the atmosphere of nitrogen with ion bombardment, single- and multilayer coatings based on TiAlSiYN with high mechanical characteristics were obtained: hardness of the coatings reached 49.5 GPa, resistance to wear, with the value of the critical point L_C_5 reaching 184.92 N. The peculiarities of radiation-induced effect at applying bias potential U_b were found: formation of nitride coatings based on fcc metallic lattice with the preferred orientation of crystallites with the texture axis [111], as well as simultaneous growth of hardness. Hardness of both single- and multilayer coatings increases by 40...50% at the increase of U_b from 50 to 200 V. Formation of silicon-containing layers of TiAlSiYN during the deposition contributes to reaching increased hardness, which, in the case of single-layer coating obtained at U_b = -200 V is 49.5 GPa, which corresponds to superhard state. The mechanisms of structure formation, defining the resulting mechanical characteristics of single- and multi-layer coatings based on TiAlSiYN nitride have been discussed.

  14. Laser cladding of a Mg based Mg–Gd–Y–Zr alloy with Al–Si powders

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Erlei [School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Zhang, Kemin, E-mail: zhangkm@sues.edu.cn [School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Zou, Jianxin [National Engineering Research Center of Light Alloys Net Forming & School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2016-03-30

    Graphical abstract: A Mg based Mg–Gd–Y–Zr alloy was treated by laser cladding with Al–Si powders at different laser scanning speeds. The laser clad layer mainly contains Mg{sub 2}Si, Mg{sub 17}Al{sub 12} and Al{sub 2}(Gd,Y) phases distributed in the Mg matrix. After laser cladding, the corrosion resistance of the Mg alloy was significantly improved together with increased microhardness in the laser clad layers. - Highlights: • A Mg based Mg–Gd–Y–Zr alloy was laser clad with Al–Si powders. • The microstructure and morphology vary with the depth of the clad layer and the laser scanning speed. • Hardness and corrosion resistance were significantly improved after laser cladding. - Abstract: In the present work, a Mg based Mg–Gd–Y–Zr alloy was subjected to laser cladding with Al–Si powders at different laser scanning speeds in order to improve its surface properties. It is observed that the laser clad layer mainly contains Mg{sub 2}Si, Mg{sub 17}Al{sub 12} and Al{sub 2}(Gd,Y) phases distributed in the Mg matrix. The depth of the laser clad layer increases with decreasing the scanning speed. The clad layer has graded microstructures and compositions. Both the volume fraction and size of Mg{sub 2}Si, Mg{sub 17}Al{sub 12} and Al{sub 2}(Gd,Y) phases decreases with the increasing depth. Due to the formation of these hardening phases, the hardness of clad layer reached a maximum value of HV440 when the laser scanning speed is 2 mm/s, more than 5 times of the substrate (HV75). Besides, the corrosion properties of the untreated and laser treated samples were all measured in a NaCl (3.5 wt.%) aqueous solution. The corrosion potential was increased from −1.77 V for the untreated alloy to −1.13 V for the laser clad alloy with scanning rate of 2 mm/s, while the corrosion current density was reduced from 2.10 × 10{sup −5} A cm{sup −2} to 1.64 × 10{sup −6} A cm{sup −2}. The results show that laser cladding is an efficient method to improve

  15. Laser cladding of a Mg based Mg–Gd–Y–Zr alloy with Al–Si powders

    International Nuclear Information System (INIS)

    Chen, Erlei; Zhang, Kemin; Zou, Jianxin

    2016-01-01

    Graphical abstract: A Mg based Mg–Gd–Y–Zr alloy was treated by laser cladding with Al–Si powders at different laser scanning speeds. The laser clad layer mainly contains Mg_2Si, Mg_1_7Al_1_2 and Al_2(Gd,Y) phases distributed in the Mg matrix. After laser cladding, the corrosion resistance of the Mg alloy was significantly improved together with increased microhardness in the laser clad layers. - Highlights: • A Mg based Mg–Gd–Y–Zr alloy was laser clad with Al–Si powders. • The microstructure and morphology vary with the depth of the clad layer and the laser scanning speed. • Hardness and corrosion resistance were significantly improved after laser cladding. - Abstract: In the present work, a Mg based Mg–Gd–Y–Zr alloy was subjected to laser cladding with Al–Si powders at different laser scanning speeds in order to improve its surface properties. It is observed that the laser clad layer mainly contains Mg_2Si, Mg_1_7Al_1_2 and Al_2(Gd,Y) phases distributed in the Mg matrix. The depth of the laser clad layer increases with decreasing the scanning speed. The clad layer has graded microstructures and compositions. Both the volume fraction and size of Mg_2Si, Mg_1_7Al_1_2 and Al_2(Gd,Y) phases decreases with the increasing depth. Due to the formation of these hardening phases, the hardness of clad layer reached a maximum value of HV440 when the laser scanning speed is 2 mm/s, more than 5 times of the substrate (HV75). Besides, the corrosion properties of the untreated and laser treated samples were all measured in a NaCl (3.5 wt.%) aqueous solution. The corrosion potential was increased from −1.77 V for the untreated alloy to −1.13 V for the laser clad alloy with scanning rate of 2 mm/s, while the corrosion current density was reduced from 2.10 × 10"−"5 A cm"−"2 to 1.64 × 10"−"6 A cm"−"2. The results show that laser cladding is an efficient method to improve surface properties of Mg–Rare earth alloys.

  16. Cracking in Si-based anodes for Li-ion batteries

    NARCIS (Netherlands)

    Aifantis, KE; Dempsey, JP; Hackney, SA

    2005-01-01

    In attempts to increase the anode capacity of rechargeable Li-ion batteries, composite materials with micro- and nano-scale domains of Li active material surrounded by Li inactive material are being investigated. Materials such as Si, Al and Sn that provide capacities between 900 and 4000 mAh g(-1)

  17. (Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

    NARCIS (Netherlands)

    Nanver, L.K.; Sammak, A.; Mohammadi, V.; Mok, K.R.C.; Qi, L.; Sakic, A.; Golshani, N.; Darakhshandeh, J.; Scholtes, T.M.L.; De Boer, W.B.

    2012-01-01

    Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these

  18. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

  19. SiC-based refractory paints prepared with alkali aluminosilicate binders

    Czech Academy of Sciences Publication Activity Database

    Medri, V.; Fabbri, S.; Ruffini, A.; Dědeček, Jiří; Vaccari, A.

    2011-01-01

    Roč. 31, č. 12 (2011), s. 2155-2165 ISSN 0955-2219 Institutional research plan: CEZ:AV0Z40400503 Keywords : C.corrosion * C.thermal properties * D.SiC Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.353, year: 2011

  20. A fast preamplifier concept for SiPM-based time-of-flight PET detectors

    NARCIS (Netherlands)

    Huizenga, J.; Seifert, S.; Schreuder, F.; Dendooven, P.; Löhner, H.; Vinke, R.; Schaart, D. R.; van Dam, H.T.

    2012-01-01

    Silicon photomultipliers (SiPMs) offer high gain and fast response to light, making them interesting for fast timing applications such as time-of-flight (TOF) PET. To fully exploit the potential of these photosensors, dedicated preamplifiers that do not deteriorate the rise time and signal-to-noise

  1. Detonation wear-resistant coatings, alloy powders based on Cr-Si

    Directory of Open Access Journals (Sweden)

    А.Г. Довгаль

    2009-03-01

    Full Text Available  Coatings from composition material Cr-Si-B on steel by detonation spraying method are obtained. Composition, structure and tribotechnical characteristics of coatings in comparison with traditional materials on the basis of Ni-Cr and alloy of tungsten and cobalt are investigated.

  2. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    strength and good thermal stability [1–8]. Apart from this ... In this work, we have considered. Si3N4 and ... of the maximum power by a factor of 3 [12,13]. According ... of the passivation layer might influence device performance [13]. This type of ...

  3. A novel, SiPM-array-based, monolithic scintillator detector for PET

    NARCIS (Netherlands)

    Schaart, Dennis R.; van Dam, Herman T.; Seifert, Stefan; Vinke, Ruud; Dendooven, Peter; Beekman, Freek J.; Löhner, H.

    2009-01-01

    Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e. g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as

  4. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

    KAUST Repository

    Flemban, Tahani H.; Haque, Mohammed; Ajia, Idris A.; Alwadai, Norah Mohammed Mosfer; Mitra, Somak; Wu, Tao; Roqan, Iman S.

    2017-01-01

    properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated

  5. A Fast Calibration System for SiPM Based Scintillator HCAL Detector

    CERN Document Server

    Polak, I

    2015-01-01

    with mid-range a fixed-intensity light pulse. The full SiPM response function is cross-checked by varying the light intensity from zero to the saturation level. In calibration systems we developed, we concentrate especially on the aspect a high dynamic range of pre...

  6. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  7. Description of hypo eutectic Al-Si-Cu alloys based on their known chemical compositions

    International Nuclear Information System (INIS)

    Djurdjevic, M. B.; Vicario, I.

    2013-01-01

    The modeling of casting processes has remained a topic of active interest for several decades, and the availability of numerous software packages on the market is a good indication of the interest that the casting industry has in this field. Most of the data used in these software packages are directly read or estimated from the binary or multi-component phase diagrams. Unfortunately, except for binary diagrams, many of ternary or higher order phase diagrams are still not accurate enough. Having in mind that most of the aluminum binary systems are very well established, it has been tried to transfer multi-component system into one well known Al-Xi pseudo binary system (in this case the Al-Si phase diagram was chosen as a reference system). The new Silicon Equivalency (SiEQ) algorithm expresses the amounts of major and minor alloying elements in the aluminum melts through an equivalent amount of silicon. Such a system could be used to calculate several thermo-physical and solidification characteristics of multi component as cast aluminum alloys. This provides to the model the capacity to predict the solidification characteristics of cast parts, where cooling rates are slow and the solidification process has to be known in great detail in order to avoid quality problems in the casting. This work demonstrates how the SiEQ algorithm can be used to calculate the characteristic solidification temperatures of the multicomponent Al-Si alloys as well as their latent heats and growth restriction factor. Statistical analysis of the results obtained for a wide range of alloy chemical compositions shows a very good correlation with the experimental data and the SiEQ calculations. The same mathematical approach might be applied for other metallic systems such as iron and magnesium, using carbon equivalency for ferrous systems and aluminum equivalency for magnesium multi-component alloys. (Author)

  8. Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

    International Nuclear Information System (INIS)

    Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

    2014-01-01

    Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

  9. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  10. Recent advances in mechanism-based chemotherapy drug-siRNA pairs in co-delivery systems for cancer: A review.

    Science.gov (United States)

    Wang, Mingfang; Wang, Jinyu; Li, Bingcheng; Meng, Lingxin; Tian, Zhaoxing

    2017-09-01

    Co-delivery of chemotherapy drugs and siRNA for cancer therapy has achieved remarkable results according to synergistic/combined antitumor effects, and is recognized as a promising therapeutic modality. However, little attention has been paid to the extremely complex mechanisms of chemotherapy drug-siRNA pairs during co-delivery process. Proper selection of chemotherapy drug-siRNA pairs is beneficial for achieving desirable cancer therapeutic effects. Exploring the inherent principles during chemotherapy drug-siRNA pair selection for co-delivery would greatly enhanced therapeutic efficiency. To achieve ideal results, this article will systematically review current different mechanism-based chemotherapy drug-siRNA pairs for co-delivery in cancer treatment. Large-scale library screening of recent different chemotherapy drug-siRNA pairs for co-delivery would help to establish the chemotherapy drug-siRNA pair selection principle, which could pave the way for co-delivery of chemotherapy drugs and siRNA for cancer treatment in clinic. Following the inherent principle of chemotherapy drug-siRNA pair, more effective co-delivery vectors can be designed in the future. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Evaluation of a timing integrated circuit architecture for continuous crystal and SiPM based PET systems

    International Nuclear Information System (INIS)

    Monzo, J M; Ros, A; Herrero-Bosch, V; Perino, I V; Aliaga, R J; Gadea-Girones, R; Colom-Palero, R J

    2013-01-01

    Improving timing resolution in positron emission tomography (PET), thus having fine time information of the detected pulses, is important to increase the reconstructed images signal to noise ratio (SNR) [1]. In the present work, an integrated circuit topology for time extraction of the incoming pulses is evaluated. An accurate simulation including the detector physics and the electronics with different configurations has been developed. The selected architecture is intended for a PET system based on a continuous scintillation crystal attached to a SiPM array. The integrated circuit extracts the time stamp from the first few photons generated when the gamma-ray interacts with the scintillator, thus obtaining the best time resolution. To get the time stamp from the detected pulses, a time to digital converter (TDC) array based architecture has been proposed as in [2] or [3]. The TDC input stage uses a current comparator to transform the analog signal into a digital signal. Individually configurable trigger levels allow us to avoid false triggers due to signal noise. Using a TDC per SiPM configuration results in a very area consuming integrated circuit. One solution to this problem is to join several SiPM outputs to one TDC. This reduces the number of TDCs but, on the other hand, the first photons will be more difficult to be detected. For this reason, it is important to simulate how the time resolution is degraded when the number of TDCs is reduced. Following this criteria, the best configuration will be selected considering the trade-off between achievable time resolution and the cost per chip. A simulation is presented that uses Geant4 for simulation of the physics process and, for the electronic blocks, spice and Matlab. The Geant4 stage simulates the gamma-ray interaction with the scintillator, the photon shower generation and the first stages of the SiPM. The electronics simulation includes an electrical model of the SiPM array and all the integrated circuitry

  12. Excessively High Vapor Pressure of Al-based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Jae Im Jeong

    2015-10-01

    Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

  13. Co-doping effect of CaS and Nd2S3 nanocrystallites on luminescence properties of sol-gel SiO2 xerogel

    International Nuclear Information System (INIS)

    Yang, P.; Lue, M.K.; Song, C.F.; Xu, D.; Yuan, D.L.; Gu, F.

    2005-01-01

    The synthesis and photoluminescence characteristics of a porous phosphor silica xerogel containing CaS and Nd 2 S 3 nanoparticles entrapped in a sol-gel silica network are discussed. X-ray diffraction (XRD), transmission electron micrograph (TEM), UV-Vis absorption spectroscopy and photoluminescence spectroscopy have been performed. The observed luminescence is assigned to CaS and Nd 2 S 3 nanoparticles embedded in the sol-gel silica xerogel. Transmission electron micrographs of doped samples revealed the presence of CaS and Nd 2 S 3 nanoparticles with average diameters of 10-20 nm. Two emission bands have been observed from co-doped sample

  14. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  15. Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

    Science.gov (United States)

    Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

    2015-02-01

    The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.

  16. Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

    Science.gov (United States)

    Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

    2011-05-23

    We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

  17. Formation of 2D-PhCs with missing holes based on Si-layers by EBL

    Science.gov (United States)

    Utkin, D. E.; Shklyev, A. A.; Tsarev, A. V.; Latyshev, A. V.

    2017-11-01

    The fabrication of the periodic structures, that is two-dimensional photonic crystals (2D PhCs) based on Si-materials by electron beam lithography (EBL) technique has been studied. We have investigated basic lithography processes such as designing, exposition, development, etching and others. The developed top-down approach allows close-packed arrays of elements and holes to be formed in nanometre range. This can be used to produce 2D PhCs with emitting micro-cavities (missing holes) with lateral size parameters with an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.

  18. Electron transport in all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi device, based on ab-initio NEGF calculations

    Science.gov (United States)

    Mikaeilzadeh, L.; Pirgholi, M.; Tavana, A.

    2018-05-01

    Based on the ab-initio non-equilibrium Green's function (NEGF) formalism based on the density functional theory (DFT), we have studied the electron transport in the all-Heusler device Co2CrSi/Cu2CrAl/Co2CrSi. Results show that the calculated transmission spectra is very sensitive to the structural parameters and the interface. Also, we obtain a range for the thickness of the spacer layer for which the MR effect is optimum. Calculations also show a perfect GMR effect in this device.

  19. Effects of Alloying Elements on Room and High Temperature Tensile Properties of Al-Si Cu-Mg Base Alloys =

    Science.gov (United States)

    Alyaldin, Loay

    In recent years, aluminum and aluminum alloys have been widely used in automotive and aerospace industries. Among the most commonly used cast aluminum alloys are those belonging to the Al-Si system. Due to their mechanical properties, light weight, excellent castability and corrosion resistance, these alloys are primarily used in engineering and in automotive applications. The more aluminum is used in the production of a vehicle, the less the weight of the vehicle, and the less fuel it consumes, thereby reducing the amount of harmful emissions into the atmosphere. The principal alloying elements in Al-Si alloys, in addition to silicon, are magnesium and copper which, through the formation of Al2Cu and Mg2Si precipitates, improve the alloy strength via precipitation hardening following heat treatment. However, most Al-Si alloys are not suitable for high temperature applications because their tensile and fatigue strengths are not as high as desired in the temperature range 230-350°C, which are the temperatures that are often attained in automotive engine components under actual service conditions. The main challenge lies in the fact that the strength of heat-treatable cast aluminum alloys decreases at temperatures above 200°C. The strength of alloys under high temperature conditions is improved by obtaining a microstructure containing thermally stable and coarsening-resistant intermetallics, which may be achieved with the addition of Ni. Zr and Sc. Nickel leads to the formation of nickel aluminide Al3Ni and Al 9FeNi in the presence of iron, while zirconium forms Al3Zr. These intermetallics improve the high temperature strength of Al-Si alloys. Some interesting improvements have been achieved by modifying the composition of the base alloy with additions of Mn, resulting in an increase in strength and ductility at both room and high temperatures. Al-Si-Cu-Mg alloys such as the 354 (Al-9wt%Si-1.8wt%Cu-0.5wt%Mg) alloys show a greater response to heat treatment as a

  20. In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Masamichi; Hasegawa, Hideki; Jia, Rui [Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628 (Japan)

    2007-04-15

    Detailed properties of the Si interface control layer (Si ICL)-based surface passivation structure are characterized by in-situ X-ray photoelectron spectroscopy (XPS) in an ultra-high vacuum multi-chamber system. Si ICLs were grown by molecular beam epitaxy (MBE) on GaAs and AlGaAs(001) and (111)B surfaces, and were partially converted to SiN{sub x} by nitrogen radical beam. Freshly MBE-grown clean GaAs and AlGaAs surfaces showed strong Fermi level pinning. Large shifts of the surface Fermi level position corresponding to reduction of pinning took place after Si ICL growth, particularly on (111)B surface (around 500 meV). However, subsequent surface nitridation increased pinning again. Then, a significant reduction of pinning was obtained by changing SiN{sub x} to silicon oxynitride by intentional air-exposure and subsequent annealing. This has led to realization of a stable passivation structure with an ultrathin oxynitride/Si ICL structure which prevented subcutaneous oxidation during further device processing under air-exposure. The Si-ICL-based passivation process was applied to surface passivation of quantum wire (QWR) transistors where anomalously large side-gating phenomenon was completely eliminated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    Science.gov (United States)

    Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

    2004-05-01

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

  2. Fabrication of Si-based planar type patch clamp biosensor using silicon on insulator substrate

    International Nuclear Information System (INIS)

    Zhang, Z.L.; Asano, T.; Uno, H.; Tero, R.; Suzui, M.; Nakao, S.; Kaito, T.; Shibasaki, K.; Tominaga, M.; Utsumi, Y.; Gao, Y.L.; Urisu, T.

    2008-01-01

    The aim of this paper is to fabricate the planar type patch clamp ion-channel biosensor, which is suitable for the high throughput screening, using silicon-on-insulator (SOI) substrate. The micropore with 1.2 μm diameter is formed through the top Si layer and the SiO 2 box layer of the SOI substrate by focused ion beam (FIB). Then the substrate is assembled into the microfluidic circuit. The human embryonic kidney 293 (HEK-293) cell transfected with transient receptor potential vanilloid type 1 (TRPV1) is positioned on the micropore and the whole-cell configuration is formed by the suction. Capsaicin is added to the extracellular solution as a ligand molecule, and the channel current showing the desensitization unique to TRPV1 is measured successfully

  3. Fabrication of Si-based planar type patch clamp biosensor using silicon on insulator substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.L.; Asano, T. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Uno, H. [Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Tero, R. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Suzui, M.; Nakao, S. [Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan); Kaito, T. [SII NanoTechnology Inc., 36-1, Takenoshita, Oyama-cho, Sunto-gun, Shizuoka, 410-1393 (Japan); Shibasaki, K.; Tominaga, M. [Okazaki Institute for Integrative Bioscience, 5-1, Higashiyama, Myodaiji, Okazaki, 444-8787 (Japan); Utsumi, Y. [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2, Koto, Kamigori, Ako-gun, Hyogo, 678-1205 (Japan); Gao, Y.L. [Department of Physics and Astronomy, Rochester University, Rochester, New York 14627 (United States); Urisu, T. [Graduate University for Advanced Studies, Myodaiji, Okazaki, 444-8585 (Japan); Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 (Japan)], E-mail: urisu@ims.ac.jp

    2008-03-03

    The aim of this paper is to fabricate the planar type patch clamp ion-channel biosensor, which is suitable for the high throughput screening, using silicon-on-insulator (SOI) substrate. The micropore with 1.2 {mu}m diameter is formed through the top Si layer and the SiO{sub 2} box layer of the SOI substrate by focused ion beam (FIB). Then the substrate is assembled into the microfluidic circuit. The human embryonic kidney 293 (HEK-293) cell transfected with transient receptor potential vanilloid type 1 (TRPV1) is positioned on the micropore and the whole-cell configuration is formed by the suction. Capsaicin is added to the extracellular solution as a ligand molecule, and the channel current showing the desensitization unique to TRPV1 is measured successfully.

  4. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    Directory of Open Access Journals (Sweden)

    Alireza Taghizadeh

    2017-09-01

    Full Text Available We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ∼60%.

  5. Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO{sub 2}–TiO{sub 2} layer

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Lien, Shui-Yang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Wuu, Dong-Sing, E-mail: dsw@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Huang, Yu-Xuan; Kung, Chung-Yuan [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China)

    2014-11-03

    In this paper, titanium dioxide (TiO{sub 2}) solution with grain sizes of 1–5 nm is prepared by microwave hydrothermal synthesis, and then mixed with silicon dioxide (SiO{sub 2}) solution to yield different SiO{sub 2}/TiO{sub 2} ratios. The mixed solution is then sol–gel spin-coated on glass as an anti-reflecting and self-cleaning bi-functional layer. The experimental results show that the transmittance is optimized not only by minimizing the reflectance by reflective index matching at the glass/air interface, but also by improving the film/glass interface adhesion. Adding SiO{sub 2} into TiO{sub 2} in a weight ratio of 5 leads to the highest average transmittance of 93.6% which is 3% higher than that of glass. All of the SiO{sub 2}–TiO{sub 2} films exhibit a remarkable inherent hydrophilicity even when not illuminated by ultra-violet light. Using the optimized SiO{sub 2}–TiO{sub 2} film in a hydrogenated amorphous silicon/microcrystalline silicon tandem, solar cell increases its conversion efficiency by 5.2%. Two months of outdoor testing revealed that cells with the SiO{sub 2}–TiO{sub 2} film avoid 1.7% of the degradation loss that is caused by dust and dirt in the environment. - Highlights: • High-transmittance and self-cleaning nano-sized SiO{sub 2}–TiO{sub 2} films are prepared. • Using SiO{sub 2}–TiO{sub 2} film can increase average transmittance from 90.5% (glass) to 93.6%. • The SiO{sub 2}–TiO{sub 2} films have naturally hydrophilicity with water contact angles < 13°. • Cells with the film have a 4.9% higher photocurrent than cells without the film.

  6. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  7. Quasi-periodic photonic crystal Fabry–Perot optical filter based on Si/SiO2 for visible-laser spectral selectivity

    Science.gov (United States)

    Qi, Dong; Wang, Xian; Cheng, Yongzhi; Chen, Fu; Liu, Lei; Gong, Rongzhou

    2018-06-01

    We report on a 1D quasi-periodic photonic crystal Fabry–Perot optical filter Cs(Si/SiO2)3(SiO2/Si)3 for spectral selectivity of visible light and 1.55 µm laser. A material transparency interval of 1.03–2.06 µm makes Si a unique choice of high refractive index material. Owing to the CIE 1931 standard and equal inclination interference, the designed structure can be successfully fabricated with a certain color (brown, khaki, or blue) corresponding to the different Cs physical thickness d and response R(λ). In addition, the peak transmittance T max of the proposed structure can reach as high as 92.56% (Cs  =  20 nm), 90.83% (Cs  =  40 nm), and 88.85% (Cs  =  60 nm) with a relatively narrow full width at half maximum of 4.4, 4.6, and 4.8 nm at 1.55 µm. The as-prepared structure indicates that it is feasible for a photonic crystal Fabry–Perot optical filter to achieve visible-laser (1.55 µm) spectral selectivity.

  8. Fracture response of SiOC based composites on dynamic loading

    Czech Academy of Sciences Publication Activity Database

    Halasová, Martina; Černý, Martin; Strachota, Adam; Chlup, Zdeněk; Dlouhý, Ivo

    2015-01-01

    Roč. 50, č. 11 (2015), s. 1547-1554 ISSN 0021-9983 R&D Projects: GA ČR GAP107/12/2445 Institutional support: RVO:68081723 ; RVO:61389013 ; RVO:67985891 Keywords : SiOC glass * basalt reinforcement * woven fabric * impact strength * energy consumption * fracture surface Subject RIV: JL - Materials Fatigue, Friction Mechanics; JH - Ceramics, Fire-Resistant Materials and Glass (USMH-B); CD - Macromolecular Chemistry (UMCH-V) Impact factor: 1.242, year: 2015

  9. Corrosion protection of SiC-based ceramics with CVD mullite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.L.; Sarin, V.K. [Boston Univ., MA (United States). Dept. of Mfg. Engineering

    1997-12-01

    For the first time, crystalline mullite coatings have been chemically vapor deposited on SiC substrates to enhance its corrosion and oxidation resistance. Thermodynamic and kinetic considerations have been utilized to produce mullite coatings with a variety of growth rates, compositions, and morphologies. The flexibility of processing can be exploited to produce coated ceramics with properties tailored to specific applications and varied corrosive environments.

  10. Characterization on the electrophoretic deposition of the 8 mol% yttria-stabilized zirconia nanocrystallites prepared by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.-H. [Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Kuo, C.-W. [Department of Resources Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Shih, C.-J. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shi-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Hung, I-M. [Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Fung, K.-Z. [Department of Materials Science and Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Wen, S.-B. [Department of Resources Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan (China); Wang, M.-C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shi-Chuan 1st Road, Kaohsiung 807, Taiwan (China)]. E-mail: cjshih@kmu.edu.tw

    2007-02-15

    An 8 mol% yttria-stabilized zirconia (8YSZ) films are electrophoretically deposited on the La{sub 0.8}Sr{sub 0.2}MnO{sub 3} substrate using 8YSZ nanocrystallites prepared by a sol-gel process. Effects of liquid suspension on the particle zeta potential and degree of agglomeration at different pH values are investigated. When the pH value deviates from the point of zero charge (PZC), the adsorption of protons on particle surfaces cause higher zeta potential and well-dispersed suspension. The optimal values of the iodine concentration, applied voltage and deposition time for the electrophoretic deposition of 8YSZ films are also found.

  11. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Thomsen, E.C.; Henager, C.H., E-mail: chuck.henager@pnnl.gov

    2013-11-15

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R{sub c}) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ∼973 K. The R{sub c}-values behaved similarly for each type of metallic electrode: R{sub c} > ∼1000 Ω cm{sup 2} at RT, decreasing continuously to ∼1–10 Ω cm{sup 2} at 973 K. The temperature dependence of the inverse R{sub c} indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ∼0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  12. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  13. Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

    Science.gov (United States)

    Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

    2012-01-01

    Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

  14. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    International Nuclear Information System (INIS)

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  15. M5Si3(M=Ti, Nb, Mo) Based Transition-Metal Silicides for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhihong [Iowa State Univ., Ames, IA (United States)

    2007-01-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600 C. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500 C. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500 C by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L {leftrightarrow} NbSS + NbB was determined to occur at 2104 ± 5 C by DTA.

  16. Effect of MoSi2 Content on Dry Sliding Tribological Properties of Zr-Based Bulk Metallic Glass Composites

    Science.gov (United States)

    Liu, Longfei; Yang, Jun

    2017-12-01

    Zr55Cu30Al10Ni5 bulk metallic glass and its composites were prepared by suction casting into a copper mold. The effect of MoSi2 content on the tribological behavior of Zr55Cu30Al10Ni5 BMG was studied by using a high-speed reciprocating friction and wear tester. The results indicate that the friction coefficient and wear resistance of the BMGs can be improved by a certain amount of crystalline phase induced by MoSi2 content from 1 to 3% and deteriorated with MoSi2 content of 4%. The wear mechanism of both the metallic glass and its composite is abrasive wear. The mechanism of crystalline phase-dependent tribological properties of the composite was discussed based on the wear track and mechanical properties in the present work. The wear behavior of Zr55Cu30Al10Ni5 BMG and its composite indicates that a good combination of the toughness and the hardness can make the composite be well wear resistant.

  17. Effect of ternary alloying elements on microstructure and mechanical property of Nb-Si based refractory intermetallic alloy

    International Nuclear Information System (INIS)

    Kim, W.Y.; Kim, H.S.; Kim, S.K.; Ra, T.Y.; Kim, M.S.

    2005-01-01

    Microstructure and mechanical property at room temperature and at 1773 K of Nb-Si based refractory intermetallic alloys were investigated in terms of compression and fracture toughness test. Mo and V were chosen as ternary alloying elements because of their high melting points, atomic sizes smaller than Nb. Both ternary alloying elements were found to have a significant role in modifying the microstructure from dispersed structure to eutectic-like structure in Nb solid solution/Nb 5 Si 3 intermetallic composites. The 0.2% offset yield strength at room temperature increased with increasing content of ternary elements in Nb solid solution and volume fraction of Nb 5 Si 3 . At 1773 K, Mo addition has a positive role in increasing the yield strength. On the other hand, V addition has a role in decreasing the yield strength. The fracture toughness of ternary alloys was superior to binary alloys. Details will be discussed in correlation with ternary alloying, volume fraction of constituent phase, and the microstructure. (orig.)

  18. Formation of equiaxed crystal structures in directionally solidified Al-Si alloys using Nb-based heterogeneous nuclei

    Science.gov (United States)

    Bolzoni, Leandro; Xia, Mingxu; Babu, Nadendla Hari

    2016-01-01

    The design of chemical compositions containing potent nuclei for the enhancement of heterogeneous nucleation in aluminium, especially cast alloys such as Al-Si alloys, is a matter of importance in order to achieve homogeneous properties in castings with complex geometries. We identified that Al3Nb/NbB2 compounds are effective heterogeneous nuclei and are successfully produced in the form of Al-2Nb-xB (x = 0.5, 1 and 2) master alloys. Our study shows that the inoculation of Al-10Si braze alloy with these compounds effectively promotes the heterogeneous nucleation of primary α-Al crystals and reduces the undercooling needed for solidification to take place. Moreover, we present evidences that these Nb-based compounds prevent the growth of columnar crystals and permit to obtain, for the first time, fine and equiaxed crystals in directionally solidified Al-10Si braze alloy. As a consequence of the potent heterogeneous particles, the size of the α-Al crystals was found to be less dependent on the processing conditions, especially the thermal gradient. Finally, we also demonstrate that the enhanced nucleation leads to the refinement of secondary phases such as eutectic silicon and primary silicon particles. PMID:28008967

  19. Improving the performance of cement-based composites containing superabsorbent polymers by utilization of nano-SiO2 particles

    International Nuclear Information System (INIS)

    Pourjavadi, Ali; Fakoorpoor, Seyed Mahmoud; Khaloo, Alireza; Hosseini, Payam

    2012-01-01

    Highlights: ► Nano-SiO 2 fully compensates compressive but not flexural strength. ► Nano-SiO 2 has the major contribution both to yield stress and viscosity. ► Lower dosages of SAP could reduce viscosity and yield stress of pastes. -- Abstract: The application of superabsorbent polymer (SAP) as an internal curing agent for cement based composites results in benefits such as reduced autogenous shrinkage and cracking. However, a reduction in compressive and flexural strength usually occurs due to the empty voids remained in the matrix after deswelling of SAP particles. Nanoparticles are good candidates for improving the mechanical performance of cementitious materials, due to their multiple mechanisms of action, not the least their high pozzolanic activity. In the present work, the capability of amorphous nano-SiO 2 (NS) as the most widely used nanoparticle in cementitious materials, for retrieving mechanical properties of SAP-containing pastes was evaluated, and its impact on setting time and rheological properties was measured. It was found that small dosages of NS could offset the negative effect of SAP on compressive strength but flexural strength was not fully compensated. Optimization of the dosages of NS and SAP could reduce the negative influences on the yield stress and viscosity whilst improving mechanical performance. Scanning electron microscopy (SEM) and Fourier transform infrared (FTIR) spectroscopy were used to monitor the changes in microstructure and composition.

  20. Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Daniya Mukhamedshina

    2017-12-01

    Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

  1. High-performance SERS substrate based on hybrid structure of graphene oxide/AgNPs/Cu film@pyramid Si

    Science.gov (United States)

    Li, Zhe; Xu, Shi Cai; Zhang, Chao; Liu, Xiao Yun; Gao, Sai Sai; Hu, Li Tao; Guo, Jia; Ma, Yong; Jiang, Shou Zhen; Si, Hai Peng

    2016-12-01

    We present a novel surface-enhanced Raman scattering (SERS) substrate based on graphene oxide/silver nanoparticles/copper film covered silicon pyramid arrays (GO/AgNPs/PCu@Si) by a low-cost and simple method. The GO/AgNPs/PCu@Si substrate presents high sensitivity, good homogeneity and well stability with R6G molecules as a probe. The detected concentration of Rhodamine 6 G (R6G) is as low as 10-15 M. These sensitive SERS behaviors are also confirmed in theory via a commercial COMSOL software, the electric field enhancement is not only formed between the AgNPs, but also formed between the AgNPs and Cu film. And the GO/AgNPs/PCu@Si substrates also present good property on practical application for the detection of methylene blue (MB) and crystal violet (CV). This work may offer a novel and practical method to facilitate the SERS applications in areas of medicine, food safety and biotechnology.

  2. Investigation on Mechanical and Fatigue behaviour of Aluminium Based SiC/ZrO2 Particle Reinforced MMC

    Science.gov (United States)

    Ramesh, S.; Govindaraju, N.; Suryanarayan, C. P.

    2018-04-01

    The study is the work on Aluminium Metal Matrix Composites (MMC’s), which have wider applications in automobile, aerospace and defense industries, hi-tech engineering and power transmission due to their lightweight, high strength and other unique properties. The Aluminium Matrix Composites (AMC’s) refer to a kind of light weight high performance Aluminium centric material system. AMC’s consist of a non-metallic reinforcement which when included into aluminium matrix offers an advantage over the base material. Reinforcements like SiC, B4C, Al2O3, TiC, TiB2, TiO2 are normally preferred to improve mechanical properties of such composites. Here Aluminium 6061 is preferred as matrix material, while silicon carbide (SiC) and Zirconium di-oxide (ZrO2) is selected as reinforcement compounds. Conventional Stir casting procedure is employed to fabricate the necessary composites compositions, which are I. Al:SiC::100:5 and II. Al:ZrO2:SiC::100:3:2. Experimental results depict that the composition II provides higher hardness of 53.6 RHN as opposed to 45.8 RHN of composition I. In tensile strength composition II demonstrates 96.43 N/mm2 as opposed to 67.229 N/mm2 tensile strength of composition II. The fatigue test indicate a expected number of life cycles to failure of 105 cycles for composition II and over 104 cycles for composition I, at stress ranges of 79.062 MPa and 150.651 MPa respectively.

  3. Influence of trimethylsilane flow on the microstructure, mechanical and tribological properties of CrSiCN coatings in water lubrication

    International Nuclear Information System (INIS)

    Wu, Zhiwei; Zhou, Fei; Wang, Qianzhi; Zhou, Zhifeng; Yan, Jiwang; Li, Lawrence Kwok-Yan

    2015-01-01

    Highlights: • CrSiCN coatings with different Si and C contents were deposited. • CrSiCN coatings consisted of Cr(C,N) nanocrystallites and amorphous phases such as a-Si_3N_4(SiC, SiCN) and a-C(a-CN_x). • CrSiCN coatings exhibited the highest hardness of 21.3 GPa at the TMS flow of 10 sccm. • CrSiCN coatings deposited at the TMS flow of 10 sccm possessed the excellent tribological properties in water. • The wear mechanism changed from tribochemical wear to mechanical wear when the TMS flow increased. - Abstract: CrSiCN coatings with different silicon and carbon contents were deposited on silicon wafers and 316L stainless steels using unbalanced magnetron sputtering via adjusting trimethylsilane (TMS) flow, and their microstructure and mechanical properties were characterized by X-ray diffraction (XRD), scanning electron microscopy(SEM), X-ray photoelectrons spectroscopy(XPS) and nano-indenter, respectively. The tribological properties of CrSiCN coatings sliding against SiC balls in water were investigated using ball-on-disk tribometer. The results showed that the CrSiCN coatings had fine composite microstructure consisting of nanocrystallites of Cr(C, N) crystal and amorphous phases such as a-Si_3N_4 and a-C(a-CN_x). The typical columnar structures changed from fine cluster to coarse ones when the Si content was beyond 3.4 at.%. With an increase in the TMS flow, the hardness and Young's modulus of Corsican coatings all first increased, and then rapidly decreased, but the compressive stress in the coatings varied in the range of 2.8–4.8 GPa. When the TMS flow was 10 sccm, the CrSiCN coatings exhibited the highest hardness of 21.3 GPa and the lowest friction coefficient (0.11) and wear rate (8.4 × 10"−"8 mm"3/N m). But when the TMS flow was beyond 15 sccm, the tribological properties of CrSiCN coatings in water became poor.

  4. Quantitative analysis of glycated albumin in serum based on ATR-FTIR spectrum combined with SiPLS and SVM.

    Science.gov (United States)

    Li, Yuanpeng; Li, Fucui; Yang, Xinhao; Guo, Liu; Huang, Furong; Chen, Zhenqiang; Chen, Xingdan; Zheng, Shifu

    2018-08-05

    A rapid quantitative analysis model for determining the glycated albumin (GA) content based on Attenuated total reflectance (ATR)-Fourier transform infrared spectroscopy (FTIR) combining with linear SiPLS and nonlinear SVM has been developed. Firstly, the real GA content in human serum was determined by GA enzymatic method, meanwhile, the ATR-FTIR spectra of serum samples from the population of health examination were obtained. The spectral data of the whole spectra mid-infrared region (4000-600 cm -1 ) and GA's characteristic region (1800-800 cm -1 ) were used as the research object of quantitative analysis. Secondly, several preprocessing steps including first derivative, second derivative, variable standardization and spectral normalization, were performed. Lastly, quantitative analysis regression models were established by using SiPLS and SVM respectively. The SiPLS modeling results are as follows: root mean square error of cross validation (RMSECV T ) = 0.523 g/L, calibration coefficient (R C ) = 0.937, Root Mean Square Error of Prediction (RMSEP T ) = 0.787 g/L, and prediction coefficient (R P ) = 0.938. The SVM modeling results are as follows: RMSECV T  = 0.0048 g/L, R C  = 0.998, RMSEP T  = 0.442 g/L, and R p  = 0.916. The results indicated that the model performance was improved significantly after preprocessing and optimization of characteristic regions. While modeling performance of nonlinear SVM was considerably better than that of linear SiPLS. Hence, the quantitative analysis model for GA in human serum based on ATR-FTIR combined with SiPLS and SVM is effective. And it does not need sample preprocessing while being characterized by simple operations and high time efficiency, providing a rapid and accurate method for GA content determination. Copyright © 2018 Elsevier B.V. All rights reserved.

  5. Effect of Barrier Metal Based on Titanium or Molybdenum in Characteristics of 4H-SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    M. Ben Karoui

    2014-05-01

    Full Text Available The electrical properties were extracted by I-V and C-V analysis, performed from 10 K to 450 K. When the annealing temperature varied to 400 °C, the Schottky barrier height (SBH increased from 0.85 Ev to 1.20 eV in Ti/4H-SiC whereas in the Mo/4H-SiC the SBH varied from 1.04 eV to 1.10 eV. Deformation of J-V-T characteristics was observed in two types of devices when the temperature decreases from 300 K to 10 K. The electrical properties and the stability of the devices have been correlated to the fabrication processes and to the metal/semiconductor interfaces. Mo-based contacts show better behaviour in forward polarization when compared to the Ti-based Schottky contacts, with ideality factors close to the unity even after the annealing process. However, Mo-based contacts show leakage currents higher than that measured on the more optimized Ti-based Schottky.

  6. Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

    Directory of Open Access Journals (Sweden)

    Dufour Christian

    2011-01-01

    Full Text Available Abstract By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λ pump = 488 nm and signal (λ signal = 1064 nm waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

  7. Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method.

    Science.gov (United States)

    Dufour, Christian; Cardin, Julien; Debieu, Olivier; Fafin, Alexandre; Gourbilleau, Fabrice

    2011-04-04

    By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

  8. Magneto-Impedance behavior of Co-Fe-Nb-Si-B-based ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Partha; Mohanta, O.; Pal, S.K.; Panda, A.K. [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India); Mitra, A., E-mail: amitra@nmlindia.or [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India)

    2010-04-15

    The giant magneto-impedance of melt spun Co{sub x}Fe{sub 72-x}Nb{sub 4}Si{sub 4}B{sub 20}(x=10, 20, 36, 50) amorphous and nanostructured ribbons have been investigated. Alloys have been optimized at the driving current amplitude, frequency and found that amorphous ribbon of nominal composition of Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} shown maximum GMI ratio of 13%. The behaviour of the driving current amplitude on the GMI behaviour was studied and the sample was optimized for driving current amplitude, I{sub ac}=10 mA. The frequency dependence of the GMI behaviour was studied for the ribbon sample Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} at frequency in the range of 100 kHz-1.2 MHz of the optimized driving current amplitude and it was found that the sample showed the maximum GMI behaviour at f=700 kHz. The optimized samples were Joule heated at the current density J=0-35 A/m{sup 2} for a period of 1 min. The GMI ratio initially increased then progressively deteriorated with J, but after a certain range it shows up to 16% of improvement in the magneto-impedance value due the increase of nanocrystalline volume fraction. The asymmetry in the GMI profile was observed for the sample Joule heated at J=1-5 A/m{sup 2} for 1 min.

  9. Synthesis and characterization of Yb and Er based monosilicate powders and durability of plasma sprayed Yb2SiO5 coatings on C/C–SiC composites

    International Nuclear Information System (INIS)

    Khan, Zuhair S.; Zou Binglin; Huang Wenzhi; Fan Xizhi; Gu Lijian; Chen Xiaolong; Zeng Shuibing; Wang Chunjie; Cao Xueqiang

    2012-01-01

    Highlights: ► Ultra-pure rare-earth monosilicate powders based on Er and Yb have been fabricated by solid-state reaction. ► Spray-drying treatment results in powders with free flowing characteristics and rounded surface morphologies. ► CTEs are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 . ► Plasma spraying has been used to deposit Yb 2 SiO 5 coatings on C/C–SiC substrate. ► Coatings remain strongly intact with the substrate on thermal cycling between ∼400 °C and 1500 °C in gas burner rig experiment. - Abstract: Rare-earth silicates such as Yb 2 SiO 5 and Er 2 SiO 5 are promising environmental barrier coating materials for ceramic matrix composites. In this work, Yb 2 SiO 5 and Er 2 SiO 5 ceramic powders have been synthesized by solid-state reaction using Yb 2 O 3 , Er 2 O 3 and SiO 2 as starting materials. The fabricated powders were subjected to spray drying treatment for subsequent synthesis of coatings by plasma spraying. The spray drying resulted in well-dispersed and spherical powder particles with good flowability. Analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetry and differential scanning calorimetry (TGA/DSC) and dilatometry were applied to study the microstructural and thermal characteristics of the powders. Ultra-high purity monosilicate powders formed as a result of heating treatments at 1400 °C in a box furnace for 20 h. TG/DSC revealed the genesis temperatures of the silicate formation (low temperature polymorphs) and also showed that the solid-state reactions to form Yb and Er based monosilicates proceeded without any weight-loss in the tested temperature range. The values of coefficients of thermal expansion (CTE) of the fabricated compounds are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 by dilatometric measurements. Besides these studies, coating formation by plasma spraying of spray-dried Yb 2 SiO 5 powders on the ceramic

  10. Experimental investigation of nitrogen based emissions from an ammonia fueled SI-engine

    DEFF Research Database (Denmark)

    Westlye, Fredrik Ree; Ivarsson, Anders; Schramm, Jesper

    2013-01-01

    . This causes the NO emissions to peak around 35% rather than 10% excess air, as is typical in HC fueled SI-engines. However the magnitude of NO emissions are comparable to that of measurements conducted with gasoline due to lower flame temperatures. Nitrogen dioxide levels are higher when comparing...... with gasoline, but has a relatively low share of the total NOx emissions (3-4%). Nitrous oxide is a product of NH2 reacting with NO 2 and NH reacting with NO. The magnitude is largely affected by ignition timing due to the temperature development during expansion and the amount of excess air, as increased...

  11. Solar cells based upon multicrystalline Si with DLC antireflection and passivating coatings

    International Nuclear Information System (INIS)

    Klyui, N.; Litovchenko, V.; Neselevska, L.; Kostylyov, V.; Sarikov, A.; Taraschenko, N.; Kittler, M.; Seifert, W.

    2006-01-01

    The characteristics of multicrystalline Si solar cells covered by diamond-like carbon (DLC) antireflection coatings been experimentally studied. It has been shown that this kind of coating provides a significant increase of the efficiency of solar cells mainly due to the increase of the short-circuit current density. The effects of antireflection and of the surface and bulk passivation on the SC current-voltage characteristics due to the DLC deposition have been investigated theoretically. Physical mechanisms underlying the observed effects have been proposed

  12. Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Qiao Dayong; Yuan Weizheng; Gao Peng; Yao Xianwang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hongjian

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. (authors)

  13. Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

    International Nuclear Information System (INIS)

    Da-Yong, Qiao; Wei-Zheng, Yuan; Peng, Gao; Xian-Wang, Yao; Bo, Zang; Lin, Zhang; Hui, Guo; Hong-Jian, Zhang

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device

  14. High resolution detectors based on continuous crystals and SiPMs for small animal PET

    International Nuclear Information System (INIS)

    Cabello, J.; Barrillon, P.; Barrio, J.; Bisogni, M.G.; Del Guerra, A.; Lacasta, C.; Rafecas, M.; Saikouk, H.; Solaz, C.; Solevi, P.; La Taille, C. de; Llosá, G.

    2013-01-01

    Sensitivity and spatial resolution are the two main factors to maximize in emission imaging. The improvement of one factor deteriorates the other with pixelated crystals. In this work we combine SiPM matrices with monolithic crystals, using an accurate γ-ray interaction position determination algorithm that provides depth of interaction. Continuous crystals provide higher sensitivity than pixelated crystals, while an accurate interaction position determination does not degrade the spatial resolution. Monte Carlo simulations and experimental data show good agreement both demonstrating sub-millimetre intrinsic spatial resolution. A system consisting in two rotating detectors in coincidence is currently under operation already producing tomographic images

  15. Method of making active magnetic refrigerant materials based on Gd-Si-Ge alloys

    Science.gov (United States)

    Pecharsky, Alexandra O.; Gschneidner, Jr., Karl A.; Pecharsky, Vitalij K.

    2006-10-03

    An alloy made of heat treated material represented by Gd.sub.5(Si.sub.xGe.sub.1-x).sub.4 where 0.47.ltoreq.x.ltoreq.0.56 that exhibits a magnetic entropy change (-.DELTA.S.sub.m) of at least 16 J/kg K, a magnetostriction of at least 2000 parts per million, and a magnetoresistance of at least 5 percent at a temperature of about 300K and below, and method of heat treating the material between 800 to 1600 degrees C. for a time to this end.

  16. Development of large area si detectors based on planar technology for charged particles

    International Nuclear Information System (INIS)

    Zhang Wanchang; Sun Liang; Huang Xiaojian; Liu Yang; Chen Guozhu

    2009-01-01

    This paper describes the processing method of large area Si detectors fabricated by planar technology for charged particles. In order to decrease the detectors leakage current, the surface passivation technique was used. The paper gives the measurement results of the leakage current of 300μm thick, 20mm diameter detectors and 500μm thick, 40mm diameter detectors respectively. The spectra of the detectors for 241 Am 5.486MeV α particles are also provided at room temperature. (authors)

  17. Ultrasensitive spectroscopy based on photonic waveguides on Al2O3/SiO2 platform

    Science.gov (United States)

    Heidari, Elham; Xu, Xiaochuan; Tang, Naimei; Mokhtari-Koushyar, Farzad; Dalir, Hamed; Chen, Ray T.

    2018-02-01

    Here a photonic waveguide on Al2O3/SiO2 platform is proposed to cover the 240 320 nm wavelength-range, which is of paramount significance in protein and nuclei acid quantification. Our optical waveguide increases path-length and overlap integration for light-matter interaction with proteins. The proposed system detects one order less proteins concentration as low as 12.5 μg/ml compared with NanoDropTM that detects Beer-Lambert-law.

  18. Tensile behaviour at room and high temperatures of novel metal matrix composites based on hyper eutectic Al-Si alloys

    International Nuclear Information System (INIS)

    Valer, J.; Rodriguez, J.M.; Urcola, J.J.

    1997-01-01

    This work shows the improvement obtained on tensile stress at room and high temperatures of hyper eutectic Al-Si alloys. These alloys are produced by a combination of spray-forming, extrusion and thixoforming process, in comparison with conventional casting alloys.Al-25% Si-5%Cu. Al-25%Si-5%Cu-2%Mg and Al-30%Si-5%Cu alloys have been studied relating their microstructural parameters with tensile stress obtained and comparing them with conventional Al-20%Si. Al-36%Si and Al-50%Si alloys. Al-25%Si-5%Cu alloy-was tested before and after semi-solid forming, in order to distinguish the different behaviour of this alloy due to the different microstructure. The properties obtained with these alloys were also related to Al-SiC composites formed by similar processes. (Author) 20 refs

  19. Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

    International Nuclear Information System (INIS)

    Vervisch, V.; Issa, F.; Ottaviani, L.; Lazar, M.; Kuznetsov, A.; Szalkai, D.; Klix, A.; Lyoussi, A.; Vermeeren, L.; Hallen, A.

    2013-06-01

    In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10 Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power (authors)

  20. Effect of Co content on structure and magnetic behaviors of high induction Fe-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Rajat K., E-mail: rajat@nmlindia.org; Panda, Ashis K.; Mitra, Amitava

    2016-11-15

    The replacement of Fe with Co is investigated in the (Fe{sub 1−x}Co{sub x}){sub 79}Si{sub 8.5}B{sub 8.5}Nb{sub 3}Cu{sub 1} (x=0, 0.05, 0.2, 0.35, 0.5) amorphous alloys. The alloys are synthesized in the forms of ribbons by single roller melt spinning technique, and the structural and magnetic properties of annealed ribbons are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), B–H curve tracer, respectively. All as-cast alloys are structurally amorphous, however, their magnetic properties are varying with Co addition. The Co addition within 5–20 at% results in moderate thermal stability, saturation induction, Curie temperature and lowest coercivity, while 35 at% Co causes highest saturation induction, coercivity, Curie temperature and lowest thermal stability. On devitrification, the magnetic properties change with the generation of α-FeCo nanocrystallites and (FeCo){sub 23}B{sub 6}, Fe{sub 2}B phases during primary and secondary crystallization stages, respectively. A small amount Co is advantageous for maintaining finer nanocrystallites in amorphous matrix even after annealing at 600 °C, leading to high saturation magnetization (>1.5 T) and low coercivity (~35 A/m). The improved magnetic properties at elevated temperatures indicate these alloys have a potential for high frequency transformer core applications. - Highlights: • The structural and magnetic behaviors of Fe based amorphous alloys have been investigated with the effect of Co content. • The Co has no adverse effect on amorphization of alloys. • A small amount Co causes the superior improvement of magnetic properties at elevated temperatures. • Therefore, it is important not only for academic research but also for industrial applied research.

  1. MDR1 siRNA loaded hyaluronic acid-based CD44 targeted nanoparticle systems circumvent paclitaxel resistance in ovarian cancer

    Science.gov (United States)

    Yang, Xiaoqian; Lyer, Arun K.; Singh, Amit; Choy, Edwin; Hornicek, Francis J.; Amiji, Mansoor M.; Duan, Zhenfeng

    2015-02-01

    Development of multidrug resistance (MDR) is an almost universal phenomenon in patients with ovarian cancer, and this severely limits the ultimate success of chemotherapy in the clinic. Overexpression of the MDR1 gene and corresponding P-glycoprotein (Pgp) is one of the best known MDR mechanisms. MDR1 siRNA based strategies were proposed to circumvent MDR, however, systemic, safe, and effective targeted delivery is still a major challenge. Cluster of differentiation 44 (CD44) targeted hyaluronic acid (HA) based nanoparticle has been shown to successfully deliver chemotherapy agents or siRNAs into tumor cells. The goal of this study is to evaluate the ability of HA-PEI/HA-PEG to deliver MDR1 siRNA and the efficacy of the combination of HA-PEI/HA-PEG/MDR1 siRNA with paclitaxel to suppress growth of ovarian cancer. We observed that HA-PEI/HA-PEG nanoparticles can efficiently deliver MDR1 siRNA into MDR ovarian cancer cells, resulting in down-regulation of MDR1 and Pgp expression. Administration of HA-PEI/HA-PEG/MDR1 siRNA nanoparticles followed by paclitaxel treatment induced a significant inhibitory effect on the tumor growth, decreased Pgp expression and increased apoptosis in MDR ovarian cancer mice model. Our findings suggest that CD44 targeted HA-PEI/HA-PEG/MDR1 siRNA nanoparticles can serve as a therapeutic tool with great potentials to circumvent MDR in ovarian cancer.

  2. A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

    International Nuclear Information System (INIS)

    Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

    2006-01-01

    Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

  3. Amorphous SiC/c-ZnO-Based Quasi-Lamb Mode Sensor for Liquid Environments

    Directory of Open Access Journals (Sweden)

    Cinzia Caliendo

    2017-05-01

    Full Text Available The propagation of the quasi-Lamb modes along a-SiC/ZnO thin composite plates was modeled and analysed with the aim to design a sensor able to detect the changes in parameters of a liquid environment, such as added mass and viscosity changes. The modes propagation was modeled by numerically solving the system of coupled electro-mechanical field equations in three media. The mode shape, the power flow, the phase velocity, and the electroacoustic coupling efficiency (K2 of the modes were calculated, specifically addressing the design of enhanced-coupling, microwave frequency sensors for applications in probing the solid/liquid interface. Three modes were identified that have predominant longitudinal polarization, high phase velocity, and quite good K2: the fundamental quasi symmetric mode (qS0 and two higher order quasi-longitudinal modes (qL1 and qL2 with a dominantly longitudinal displacement component in one plate side. The velocity and attenuation of these modes were calculated for different liquid viscosities and added mass, and the gravimetric and viscosity sensitivities of both the phase velocity and attenuation were theoretically calculated. The present study highlights the feasibility of the a-SiC/ZnO acoustic waveguides for the development of high-frequency, integrated-circuit compatible electroacoustic devices suitable for working in a liquid environment.

  4. Structure of new Al-Si based RQ systems with potentially enhanced stiffness

    International Nuclear Information System (INIS)

    Zigo, J.; Svec, P.; Janickovic, D.; Janotova, I.; Matko, I.; Svec, P. Sr.

    2014-01-01

    Amorphous and nanocrystalline metallic systems prepared by rapid quenching of melt are interesting for many unique properties. Mechanical properties are among the most important ones. Rapid quenching of metallic melt can enhance mechanical properties of material, compared to metal alloys prepared by conventional metallurgy. Aluminium as one of most accessible light-weight metals has wide range of applications as construction material. Alloying aluminium with another element can significantly improve mechanical properties. Reasonable choice for alloying element in terms of sustaining light-weight nature of the material is silicon. Dissolving silicon in aluminium can be achieved, even with the aid of rapid quenching, only up to few weight percent. Increasing the content of dissolved silicon is possible by adding other alloying components. Candidates with respect to low specific mass are transition elements of 4"t"h period (from scandium to zinc). In our experimental study, we have chosen alloying of Al-Si with transition elements (T) iron, cobalt and nickel. Composition of the investigated systems was Al_8_0_-_xT_xSi_2_0 where T = Fe, Co, Ni and x = 0, 5 and 10. (authors)

  5. Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

    Science.gov (United States)

    Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

    2018-06-01

    The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

  6. Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, Phannee

    2010-07-08

    An increasing demand for bright and efficient ultraviolet light emitting diodes (UVLEDs) is generated by numerous applications such as biochemical sensors, purification and sterilization, and solid-state white lighting. Al{sub x}Ga{sub 1-x}N is a promising material to develop UVLEDs due to the direct wide-bandgap material for emission wavelengths in the UV range and the capability of n- and p-type doping. To develop UV-LEDs on Si substrates is very interesting for low-cost UV-light sources since the Si substrate is available at low cost, in large-diameter size enabling the integration with well-known Si electronics. This work presents the first crack-free AlGaN-based UV-LEDs on Si(111) substrates by MOVPE growth. This AlGaN-based UV-LED on Si(111) substrate consists of Al{sub 0.1}Ga{sub 0.9}N:Si layers on LT-AlN/HT-AlN SL buffer layers and an active layer of GaN/Al{sub 0.1}Ga{sub 0.9}N MQWs followed by Mg-doped (GaN/Al{sub 0.1}Ga{sub 0.9}N) superlattices and GaN:Mg cap layers. It yields a {proportional_to}350 nm UV electroluminescence at room temperature and a turn-on voltage in a range of 2.6-3.1 V by current-voltage (I-V) measurements. The novel LT-AlN/HT-AlN superlattice buffer layers efficiently improve the crystalline quality of Al{sub x}Ga{sub 1-x}N layers and compensate a thermal tensile strain in Al{sub x}Ga{sub 1-x}N layers after cooling as observed by in-situ curvature measurements. The dislocation density could be reduced from 8.4 x 10{sup 10} cm{sup -2} in the AlN-based SLs to 1.8 x 10{sup 10} cm{sup -2} in the Al{sub 0.1}Ga{sub 0.9}N layers as determined by cross-sectional transmission electron microscopy (TEM) measurements. Crack-free Al{sub x}Ga{sub 1-x}N layers grown on these LT-AlN/HT-AlN superlattices with 0.05{<=}x{<=} 0.65 are achieved on Si substrates with good crystalline, optical, and electrical properties. The best crystalline quality of Al{sub 0.1}Ga{sub 0.9}N is obtained with {omega}-FWHMs of the (0002) and (10-10) reflections of

  7. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  8. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  9. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  10. Processes and procedures for a thin film multilevel hybrid circuit metallization system based on W--Au/SiO2/Al/SiO2

    International Nuclear Information System (INIS)

    Hampy, R.E.; Knauss, G.L.; Komarek, E.E.; Kramer, D.K.; Villanueva, J.

    1976-04-01

    The processes and procedures developed for the deposition and photodefinition of a W-Au/SiO 2 /Al/SiO 2 hybrid circuit metallization system for the SLL Micro Actuator are described. The metallization system affords a high degree of miniaturization and permits effective interconnection of a mixture of semiconductor devices and passive components with both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Sputtered tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the second level conductor. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossovers. Vias in the insulating layer permit tungsten-aluminum interconnections where desired. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding pads. Substrates used were polished sapphire and fine grained alumina. The metallization is capable of withstanding processing temperatures up to 400 0 C for short times

  11. Nanocrystallization in amorphous Fe40Ni40(Si+B)19Mo1-2 ribbons

    International Nuclear Information System (INIS)

    Saiseng, S.; Winotai, P.; Nilpairuch, S.; Limsuwan, P.; Tang, I.M.

    2004-01-01

    Cut Fe 40 Ni 40 (Si+B) 19 Mo 1-2 ribbons were annealed for 2 h at various temperatures between 350 deg. C and 600 deg. C. XRD and Mossbauer effect spectroscopy (ME) measurements were then performed on all of the ribbons. The magnetic properties of several ribbons were measured using a vibrating sample magnetometer (VSM). A differential thermal analysis scan (over the range 20-800 deg. C) of the as-cast ribbon showed two phase transitions; the first at 454 deg. C and the second at 525 deg. C. Both the XRD and ME spectra of the as cast, the 350 deg. C and 400 deg. C annealed ribbons showed that they were amorphous. The ME spectra of the 450 deg. C, 475 deg. C and 500 deg. C annealed ribbons showed that these ribbons contained α-Fe, α-Fe(Si) and t-Fe 2 B nanocrystallites. For the ribbons annealed above 550 deg. C, crystallites of t-Fe 2 B, t-Fe 3 B, t-Fe 5 SiB 2 and FCC-FeNi appeared, with the α-Fe and α-Fe(Si) crystallites disappearing. The sextets of all of the Fe compounds appeared in the ME spectra of the 525 deg. C annealed ribbon. The VSM measurements supported the picture of a two-stage phase transitions; amorphous phase→a nanocrystalline phase (Fe-containing nanocrystallites in an amorphous matrix) at 454 deg. C and then a second transition, the nanocrystalline phase→a disordered alloy containing Fe-B and Fe-Ni crystallites at 525 deg. C

  12. Radiation-induced grain subdivision and bubble formation in U3Si2 at LWR temperature

    Science.gov (United States)

    Yao, Tiankai; Gong, Bowen; He, Lingfeng; Harp, Jason; Tonks, Michael; Lian, Jie

    2018-01-01

    U3Si2, an advanced fuel form proposed for light water reactors (LWRs), has excellent thermal conductivity and a high fissile element density. However, limited understanding of the radiation performance and fission gas behavior of U3Si2 is available at LWR conditions. This study explores the irradiation behavior of U3Si2 by 300 keV Xe+ ion beam bombardment combining with in-situ transmission electron microscopy (TEM) observation. The crystal structure of U3Si2 is stable against radiation-induced amorphization at 350 °C even up to a very high dose of 64 displacements per atom (dpa). Grain subdivision of U3Si2 occurs at a relatively low dose of 0.8 dpa and continues to above 48 dpa, leading to the formation of high-density nanoparticles. Nano-sized Xe gas bubbles prevail at a dose of 24 dpa, and Xe bubble coalescence was identified with the increase of irradiation dose. The volumetric swelling resulting from Xe gas bubble formation and coalescence was estimated with respect to radiation dose, and a 2.2% volumetric swelling was observed for U3Si2 irradiated at 64 dpa. Due to extremely high susceptibility to oxidation, the nano-sized U3Si2 grains upon radiation-induced grain subdivision were oxidized to nanocrystalline UO2 in a high vacuum chamber for TEM observation, eventually leading to the formation of UO2 nanocrystallites stable up to 80 dpa.

  13. Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

    Science.gov (United States)

    Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

    2006-12-01

    A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

  14. Two-functional sensor of magnetic field and deformation based on Si microcrystals

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2017-06-01

    Full Text Available This research investigates complex studies of electrical conductivity and magnetoresistance of both strain and non-strain samples of p-type Si whiskers with different degrees of doping with boron and nickel in a wide temperature range from 4.2 to 300 K. It is established that the greatest manifestation of the piezoresistive effect is observed in the vicinity of concentrations which correspond to the metal-insulator transition. Investigation of the magnetoresistance of crystals was carried out in the range of fields with induction up to 14 T. Whiskers of silicon with a doping concentration of boron of 5·1018 cm-3 can be used as a sensitive element for two-functional deformation and magnetic field sensors in difficult operating conditions. Microwires for research were grown by chemical transport reactions with the crystallographic orientation and with the concentration of charge carriers, which corresponds to the vicinity of metal-insulator transition (5·1018 см-3. The nickel doping was conducted by the low-temperature diffusion from the precipitated film on the surface of the crystal. The uniaxial strain of Si microcrystals was carried out by fixing them on substrates with the different coefficient of thermal. The metallic-type temperature dependence on the resistivity is typical for heavily doped silicon microcrystals (with the bor concenctation >5·1018 сm-3 for both deformed and non deformed samples. Significant influence of the deformation on characteristics of microcrystals wasn't found. The maximum magnetoresistance of such samples doesn't exceed 4% in magnetic fields with induction of 14 T at the temperature of liquefied helium. The resistivity of Si crystals with ρ300К = 0.012 Оhm·сm (which corresponds to the dielectric side of MIT is reduced in several times at the the temperature of liquefied helium and under the uniaxial deformation. Decreasing of boron concentration reduces this effect. This is also confirmed by the

  15. Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

    International Nuclear Information System (INIS)

    Fu, Y Q; Milne, S B; Luo, J K; Flewitt, A J; Wang, L; Miao, J M; Milne, W I

    2006-01-01

    A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, H f O 2 , was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms

  16. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure

    International Nuclear Information System (INIS)

    Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.

    2015-01-01

    P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling

  17. Deposition and cyclic oxidation behavior of a protective (Mo,W)(Si,Ge) 2 coating on Nb-base alloys

    International Nuclear Information System (INIS)

    Mueller, A.; Wang, G.

    1992-01-01

    A multicomponent diffusion coating has been developed to protect Nb-base alloys from high-temperature environmental attach. A solid solution of molybdenum and tungsten disilicide (Mo, W)Si 2 , constituted the primary coating layer which supported a slow-growing protective silica scale in service. Germanium additions were made during the coating process to improve the cyclic oxidation resistance by increasing the thermal expansion coefficient of the vitreous silica film formed and to avoid pesting by decreasing the viscosity of the protective film. In this paper, the development of the halide-activated pack cementation coating process to produce this (Mo,W)(Si,Ge) 2 coating on Nb-base alloys is described. The results of cyclic oxidation for coupons coated under different conditions in air at 1370 degrees C are presented. Many coupons have successfully passed 200 1 h cyclic oxidation tests at 1370 degrees C with weight-gain values in the range of 1.2 to 1.6 mg/cm 2

  18. Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding

    Directory of Open Access Journals (Sweden)

    Ke Wang

    2017-02-01

    Full Text Available A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC, and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

  19. Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

    Science.gov (United States)

    Jesse, Stephen; Hudak, Bethany M.; Zarkadoula, Eva; Song, Jiaming; Maksov, Artem; Fuentes-Cabrera, Miguel; Ganesh, Panchapakesan; Kravchenko, Ivan; Snijders, Panchapakesan C.; Lupini, Andrew R.; Borisevich, Albina Y.; Kalinin, Sergei V.

    2018-06-01

    Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore’s law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

  20. Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback.

    Science.gov (United States)

    Jesse, Stephen; Hudak, Bethany M; Zarkadoula, Eva; Song, Jiaming; Maksov, Artem; Fuentes-Cabrera, Miguel; Ganesh, Panchapakesan; Kravchenko, Ivan; Snijders, Panchapakesan C; Lupini, Andrew R; Borisevich, Albina Y; Kalinin, Sergei V

    2018-06-22

    Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

  1. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Okumura, Satoshi; Yeom, Jung Yeol

    2016-01-01

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  2. On the effect of Nb-based compounds on the microstructure of Al–12Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Bolzoni, L., E-mail: leandro.bolzoni@brunel.ac.uk; Nowak, M.; Hari Babu, N.

    2015-07-15

    Cast Al alloys are important structural materials for the lightweighting of cars and, consequently, reduction of greenhouse gases emission and pollution. The microstructure and properties of cast Al alloys could be further improved by means of grain refinement, practise which cannot efficiently be performed with common Al–Ti–B grain refiners used for wrought Al alloys. In this work we proposed the employment of Nb+B inoculation as an alternative for the refinement of the primary α-Al dendrites of cast Al–Si alloy by studying the grain refinement induced by the Nb+B inoculants as a function of key aspects such as cooling rate, fading behaviour and simulated recyclability tests. It is found that the grain size of the Nb+B inoculated material is noticeably less sensitive to the cooling rate. Nb+B inoculants are still present and promote the refinement of the Al–12Si alloy even after few hours of contact time, although some fading is detected. Furthermore, Nb+B inoculants are also still effective for enhancing heterogeneous nucleation after three remelting of the inoculated alloy. The fading behaviour and ability to retain grain refining potency after remelting are highly relevant to industrial scale applications. - Highlights: • The influence of Nb+B inoculation on Al–12SSi is assessed. • The grain size decreases along with the amount of Nb+B compounds. • Nb+B inoculation makes the grain size less sensitive from the cooling rate. • Grain refinement is obtained via heterogeneous nucleation.

  3. On the effect of Nb-based compounds on the microstructure of Al–12Si alloy

    International Nuclear Information System (INIS)

    Bolzoni, L.; Nowak, M.; Hari Babu, N.

    2015-01-01

    Cast Al alloys are important structural materials for the lightweighting of cars and, consequently, reduction of greenhouse gases emission and pollution. The microstructure and properties of cast Al alloys could be further improved by means of grain refinement, practise which cannot efficiently be performed with common Al–Ti–B grain refiners used for wrought Al alloys. In this work we proposed the employment of Nb+B inoculation as an alternative for the refinement of the primary α-Al dendrites of cast Al–Si alloy by studying the grain refinement induced by the Nb+B inoculants as a function of key aspects such as cooling rate, fading behaviour and simulated recyclability tests. It is found that the grain size of the Nb+B inoculated material is noticeably less sensitive to the cooling rate. Nb+B inoculants are still present and promote the refinement of the Al–12Si alloy even after few hours of contact time, although some fading is detected. Furthermore, Nb+B inoculants are also still effective for enhancing heterogeneous nucleation after three remelting of the inoculated alloy. The fading behaviour and ability to retain grain refining potency after remelting are highly relevant to industrial scale applications. - Highlights: • The influence of Nb+B inoculation on Al–12SSi is assessed. • The grain size decreases along with the amount of Nb+B compounds. • Nb+B inoculation makes the grain size less sensitive from the cooling rate. • Grain refinement is obtained via heterogeneous nucleation

  4. Effect of SiC whisker addition on the microstructures and mechanical properties of Ti(C, N)-based cermets

    International Nuclear Information System (INIS)

    Wu, Peng; Zheng, Yong; Zhao, Yongle; Yu, Haizhou

    2011-01-01

    Ti(C, N)-based cermets with addition of SiC whisker (SiC w ) were prepared by vacuum sintering. The microstructures of the prepared cermets were investigated by using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). Mechanical properties such as transverse rupture strength (TRS), fracture toughness (K IC ) and hardness (HRA) were also measured. It was found that the grain size of the cermets was affected by the SiC whisker addition. The cermets with 1.0 wt.% SiC whisker addition exhibited the smallest grain size. The porosities of the cermets increased with increasing SiC whisker additions. The addition of the SiC whisker had no influence on the phase constituents of the cermets. Compared with the cermets with no whisker addition, the highest TRS and fracture toughness for cermets with 1.0 wt.% SiC whisker addition increased by about 24% and 29%, respectively. The strengthening mechanisms were attributed to finer grain size, homogeneous microstructure and moderate thickness of rim phase. The toughening mechanisms were characterized by crack deflection, whisker bridging and whisker pulling-out.

  5. Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

    Science.gov (United States)

    You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

    2018-02-01

    In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

  6. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  7. Synthesis and characterization of a novel stationary phase, Si-Zr/Ti(PMTDS), based upon ternary oxide support for high performance liquid chromatography

    Energy Technology Data Exchange (ETDEWEB)

    Amparo, Maura R.; Marques, Fabiana A.; Faria, Anizio M., E-mail: anizio@pontal.ufu.br [Universidade Federal de Uberlandia (FACIP/UFU), Ituiutaba, MG (Brazil). Faculdade de Ciencias Integradas do Pontal

    2013-09-15

    A new stationary phase based on the thermal immobilization of poly(methyltetradecylsiloxane) (PMTDS) on silica particles coated with a mixture of zirconia and titania was prepared and evaluated for the chromatographic separation of test mixtures. The spherical particles were characterized by elemental analysis, SEM, FTIR and {sup 29}Si NMR. The physicochemical properties of PMTDS phase supported on Si-Zr/Ti were intermediate between PMTDS phases supported on titanized silica and zirconized silica. The chromatographic performance of Si-Zr/Ti(PMTDS) phase was similar to PMTDS phases based on metal oxide coated silica having only one metal oxide and the preparation of a Si-Zr/Ti(PMTDS) phase allowed evaluation of the effect of each oxide, zirconia and titania, on the separation process and on the stability of the immobilized polymer phase. The hydrolytic stability of Si-Zr/Ti(PMTDS) stationary phase was similar to the Si-Ti(PMTDS) phase, improving the chemical stability of the silica-based PMTDS phase by about 100%. (author)

  8. The dissimilar brazing of Kovar alloy to SiCp/Al composites using silver-based filler metal foil

    Science.gov (United States)

    Wang, Peng; Xu, Dongxia; Zhai, Yahong; Niu, Jitai

    2017-09-01

    Aluminum metal matrix composites with high SiC content (60 vol.% SiCp/Al MMCs) were surface metallized with a Ni-P alloy coating, and vacuum brazing between the composites and Kovar alloy were performed using rapidly cooled Ag-22.0Cu-15.9In-10.86Sn-1.84Ti (wt%) foil. The effects of Ni-P alloy coating and brazing parameters on the joint microstructures and properties were researched by SEM, EDS, and single lap shear test, respectively. Results show that Ag-Al intermetallic strips were formed in the 6063Al matrix and filler metal layer because of diffusion, and they were arranged regularly and accumulated gradually as the brazing temperature was increased ( T/°C = 550-600) or the soaking time was prolonged ( t/min = 10-50). However, excessive strips would destroy the uniformity of seams and lead to a reduced bonding strength (at most 70 MPa). Using a Ni-P alloy coating, void free joints without those strips were obtained at 560 °C after 20 min soaking time, and a higher shear strength of 90 MPa was achieved. The appropriate interface reaction ( 2 μm transition layer) that occurred along the Ni-P alloy coating/filler metal/Kovar alloy interfaces resulted in better metallurgical bonding. In this research, the developed Ag-based filler metal was suitable for brazing the dissimilar materials of Ni-P alloy-coated SiCp/Al MMCs and Kovar alloy, and capable welding parameters were also broadened.

  9. Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich

    2012-06-22

    This work is concerned with the realization and investigation of a light emitting diode (LED) structure within single GaN nanowires (NWs) and its integration with Si technology. To this end first a general understanding of the GaN NW growth is given. This is followed by investigations of the influence which doping species, such as Mg and Si, have on the growth of the NWs. The experience gathered in these studies set the basis for the synthesis of nominal p-i-n and n-i-p junctions in GaN NWs. Investigations of these structures resulted in the technologically important insight, that p-type doping with Mg is achieved best if it is done in the later NW growth stage. This implies that it is beneficial for a NW LED to place the p-type segment on the NW top. Another important component of an LED is the active zone where electron-hole recombination takes place. In the case of planar GaN LEDs, this is usually achieved by alloying Ga and In to form InGaN. In order to be able to control the growth under a variety of conditions, we investigate the growth of InGaN in the form of extended segments on top of GaN NWs, as well as multi quantum wells (MQWs) in GaN NWs. All the knowledge gained during these preliminary studies is harnessed to reach the overall goal: The realization of a GaN NW LED. Such structures are fabricated, investigated and processed into working LEDs. Finally, a report on the efforts of integrating III-nitride NW LEDs and Si based metaloxide-semiconductor field effect transistor (MOSFET) technology is given. This demonstrates the feasibility of the monolithic integration of both devices on the same wafer at the same time.

  10. Highly selective and sensitive fluorogenic ferric probes based on aggregation-enhanced emission with - SiMe3 substituted polybenzene

    Science.gov (United States)

    Wang, Xuefeng; Wang, Hua; Jiang, Qin; Lee, Yong-Ill; Feng, Shengyu; Liu, Hong-Guo

    2018-01-01

    In this study, thiophene was linked to polybenzene to generate novel fluorescent probes, namely 3,4-diphenyl-2,5-di(2-thienyl)phenyl-trimethylsilane (DPTB-TMS) with a - SiMe3 substituent and 3,4-diphenyl-2,5-di(2-thienyl)phenyl (DPTB) without the - SiMe3 substituent, respectively. Both of the two compounds exhibit aggregation-enhanced emission (AEE) properties in tetrahydrofuran/water mixtures due to restricted intramolecular rotation of the peripheral groups, which make the two compounds good candidates for the detection of Fe3 + ions in aqueous-based solutions. The fluorescence intensity of the two compounds decreases immediately and obviously upon addition of a trace amount of Fe3 +, and decreases continuously as the amount of Fe3 + increases. The fluorescence was quenched to 92% of its initial intensity when the amount of Fe3 + ions reached 6 μmol for DPTB-TMS and to 80% for DPTB in the systems, indicating that the compound with the - SiMe3 group is a more effective probe. The detection limit was found to be 1.17 μM (65 ppb). The detection mechanism is proposed to be static quenching. DPTB-TMS is highly efficient for the detection of ferric ions even in the presence of other metal ions. In addition, the method is also successfully applied to the detection of ferric ions in water, blood serum, or solid films. This indicates that these polybenzene compounds can be applied as low-cost, high selectivity, and high efficiency Fe3 + probes in water or in clinical applications.

  11. SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

    KAUST Repository

    Ramadan, Khaled S.

    2012-04-01

    Polymer based microelectromechanical systems (MEMS) micromachining is finding more interest in research and applications. This is due to its low cost and less time processing compared with silicon MEMS. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic devices. In addition to being processed with low cost, it is a biocompatible material with good mechanical properties. Also, amorphous silicon (α-Si) has found use as a sacrificial layer in silicon MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed using amorphous silicon (α-Si) as a sacrificial layer. Electrostatic actuation and sensing is used in many MEMS applications. SU-8 is a dielectric material which limits its direct use in electrostatic actuation. This thesis provides a MEMS process with two conductive metal electrodes that can be used for out-of-plane electrostatic applications like MEMS switches and variable capacitors. The process provides the fabrication of dimples that can be conductive or non-conductive to facilitate more flexibility for MEMS designers. This SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were tuned for two sets of thicknesses which are thin (5-10μm) and thick (130μm). Chevron bent-beam structures and different suspended beams (cantilevers and bridges) were fabricated to characterize the SU-8 process through extracting the density, Young’s Modulus and the Coefficient of Thermal Expansion (CTE) of SU-8. Also, the process was tested and used as an educational tool through which different MEMS structures were fabricated including MEMS switches, variable capacitors and thermal actuators.

  12. Dual-Functionalized Graphene Oxide Based siRNA Delivery System for Implant Surface Biomodification with Enhanced Osteogenesis.

    Science.gov (United States)

    Zhang, Li; Zhou, Qing; Song, Wen; Wu, Kaimin; Zhang, Yumei; Zhao, Yimin

    2017-10-11

    Surface functionalization by small interfering RNA (siRNA) is a novel strategy for improved implant osseointegration. A gene delivery system with safety and high transfection activity is a crucial factor for an siRNA-functionalized implant to exert its biological function. To this end, polyethylene glycol (PEG) and polyethylenimine (PEI) dual-functionalized graphene oxide (GO; nGO-PEG-PEI) may present a promising siRNA vector. In this study, nanosized nGO-PEG-PEI was prepared and optimized for siRNA delivery. Titania nanotubes (NTs) fabricated by anodic oxidation were biomodified with nGO-PEG-PEI/siRNA by cathodic electrodeposition, designated as NT-GPP/siRNA. NT-GPP/siRNA possessed benign cytocompatibility, as evaluated by cell adhesion and proliferation. Cellular uptake and knockdown efficiency of the NT-GPP/siRNA were assessed by MC3T3-E1 cells, which exhibited high siRNA delivery efficiency and sustained target gene silencing. Casein kinase-2 interacting protein-1 (Ckip-1) is a negative regulator of bone formation. siRNA-targeting Ckip-1 (siCkip-1) was introduced to the implant, and a series of in vitro and in vivo experiments were carried out to evaluate the osteogenic capacity of NT-GPP/siCkip-1. NT-GPP/siCkip-1 dramatically improved the in vitro osteogenic differentiation of MC3T3-E1 cells in terms of improved osteogenesis-related gene expression, and increased alkaline phosphatase (ALP) production, collagen secretion, and extracellular matrix (ECM) mineralization. Moreover, NT-GPP/siCkip-1 led to apparently enhanced in vivo osseointegration, as indicated by histological staining and EDX line scanning. Collectively, these findings suggest that NT-GPP/siRNA represents a practicable and promising approach for implant functionalization, showing clinical potential for dental and orthopedic applications.

  13. Development of a circular shape Si-PM-based detector ring for breast-dedicated PET system

    Science.gov (United States)

    Nakanishi, Kouhei; Yamamoto, Seiichi; Watabe, Hiroshi; Abe, Shinji; Fujita, Naotoshi; Kato, Katsuhiko

    2018-02-01

    In clinical situations, various breast-dedicated positron emission tomography (PET) systems have been used. However, clinical breast-dedicated PET systems have polygonal detector ring. Polygonal detector ring sometimes causes image artifact, so complicated reconstruction algorithm is needed to reduce artifact. Consequently, we developed a circular detector ring for breast-dedicated PET to obtain images without artifact using a simple reconstruction algorithm. We used Lu1.9Gd0.1SiO5 (LGSO) scintillator block which was made of 1.5 x 1.9 x 15 mm pixels that were arranged in an 8 x 24 matrix. As photodetectors, we used silicon photomultiplier (Si-PM) arrays whose channel size was 3 x 3 mm. A detector unit was composed of four scintillator blocks, 16 Si-PM arrays and a light guide. The developed detector unit had angled configuration since the light guide was bending. A detector unit had three gaps with an angle of 5.625° between scintillator blocks. With these configurations, we could arrange 64 scintillator blocks in nearly circular shape (regular 64-sided polygon) using 16 detector units. The use of the smaller number of detector units could reduce the size of the front-end electronics circuits. The inner diameter of the developed detector ring was 260 mm. This size was similar to those of brain PET systems, so our breast-dedicated PET detector ring can measure not only breast but also brain. Measured radial, tangential and axial spatial resolution of the detector ring reconstructed by the filtered back-projection (FBP) algorithm were 2.1 mm FWHM, 2.0 mm FWHM and 1.7 mm FWHM at center of field of view (FOV), respectively. The sensitivity was 2.0% at center of the axial FOV. With the developed detector ring, we could obtain high resolution image of the breast phantom and the brain phantom. We conclude that our developed Si-PM-based detector ring is promising for a high resolution breast-dedicated PET system that can also be used for brain PET system.

  14. Sr-doped nanowire modification of Ca-Si-based coatings for improved osteogenic activities and reduced inflammatory reactions

    Science.gov (United States)

    Li, Kai; Hu, Dandan; Xie, Youtao; Huang, Liping; Zheng, Xuebin

    2018-02-01

    Biomedical coatings for orthopedic implants should facilitate osseointegration and mitigate implant-induced inflammatory reactions. In our study, Ca-Si coatings with Sr-containing nanowire-like structures (NW-Sr-CS) were achieved via hydrothermal treatment. In order to identify the effect of nanowire-like topography and Sr dopant on the biological properties of Ca-Si-based coatings, the original Ca-Si coating, Ca-Si coatings modified with nanoplate (NP-CS) and similar nanowire-like structure (NW-CS) were fabricated as the control. Surface morphology, phase composition, surface area, zeta potential and ion release of these coatings were characterized. The in vitro osteogenic activities and immunomodulatory properties were evaluated with bone marrow stromal cells (BMSCs) and RAW 264.7 cells, a mouse macrophage cell line. Compared with the CS and NP-CS coatings, the NW-CS coating possessed a larger surface area and pore volume, beneficial protein adsorption, up-regulated the expression levels of integrin β1, Vinculin and focal adhesion kinase and promoted cell spreading. Furthermore, the NW-CS coating significantly enhanced the osteogenic differentiation and mineralization as indicated by the up-regulation of ALP activity, mineralized nodule formation and osteoblastogenesis-related gene expression. With the introduction of Sr, the NW-Sr-CS coatings exerted a greater effect on the BMSC proliferation rate, calcium sensitive receptor gene expression as well as PKC and ERK1/2 phosphorylation. In addition, the Sr-doped coatings significantly up-regulated the ratio of OPG/RANKL in the BMSCs. The NW-Sr-CS coatings could modulate the polarization of macrophages towards the wound-healing M2 phenotype, reduce the mRNA expression levels of pro-inflammatory cytokines (TNF-α, IL-1β, IL-6) and enhance anti-inflammatory cytokines (IL-1ra, IL-10). The Sr-doped nanowire modification may be a valuable approach to enhance osteogenic activities and reduce inflammatory reactions.

  15. Transmission electron microscopy characterization of laser-clad iron-based alloy on Al-Si alloy

    International Nuclear Information System (INIS)

    Mei, Z.; Wang, W.Y.; Wang, A.H.

    2006-01-01

    Microstructure characterization is important for controlling the quality of laser cladding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the iron-based alloy laser-clad on Al-Si alloy and an unambiguous identification of phases in the coating was accomplished. It was found that there is austenite, Cr 7 C 3 and Cr 23 C 6 in the clad region; α-Al, NiAl 3 , Fe 2 Al 5 and FeAl 2 in the interface region; and α-Al and silicon in the heat-affected region. A brief discussion was given for their existence based on both kinetic and thermodynamic principles

  16. Production and characterization of stainless steel based Fe-Cr-Ni-Mn-Si(-Co) shape memory alloys

    International Nuclear Information System (INIS)

    Otubo, J.

    1995-01-01

    It is well known that the Fe based alloys can exhibit shape memory effect due to the γ to ε martensitic transformation. The effect may not be as striking as observed in the NiTi alloy but it might become attractive from the practical point of view. In this work, two compositions of Fe-Cr-Ni-Mn-Si(-Co) stainless steel based shape memory alloy, prepared by the VIM technique, will be presented. The results are good with shape recovery of 95% for a pre-strain of 4% after some training cycles. In terms of workability the alloys produced are worse than the usual AISI304. However, adjusting the thermo-mechanical processing, it is perfectly possible to produce wire as thin as 1,20mm in dia. or down. (orig.)

  17. Preliminary study in development of glass-ceramic based on SiO{sub 2}-LiO{sub 2} system, starting of different SiO{sub 2} starting powders; Um estudo preliminar do desenvolvimento de materiais vitroceramicos do sistema SiO{sub 2}-LiO{sub 2} obtidos a partir de diferentes fontes de silica

    Energy Technology Data Exchange (ETDEWEB)

    Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D. [Universidade de Sao Paulo (EEL/USP), Lorena, SP (Brazil). Escola de Engenharia de Lorena. Dept. de Materiais; Melo, F.C.L. [Centro Tecnico Aeroespacial (AMR/CTA/IAE), Sao Jose dos Campos, SP (Brazil). Instituto de Aeronautica e Espaco. Div. de Materiais

    2009-07-01

    In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO{su