Hydrothermal Synthesis of Nanoclusters of ZnS Comprised on Nanowires

Directory of Open Access Journals (Sweden)

Magnus Willander

2013-09-01

Full Text Available Cetyltrimethyl ammonium bromide cationic (CTAB surfactant was used as template for the synthesis of nanoclusters of ZnS composed of nanowires, by hydrothermal method. The structural and morphological studies were performed by using X-ray diffraction (XRD, scanning electron microscopy (SEM and high resolution transmission electron microscopy (HRTEM techniques. The synthesized ZnS nanoclusters are composed of nanowires and high yield on the substrate was observed. The ZnS nanocrystalline consists of hexagonal phase and polycrystalline in nature. The chemical composition of ZnS nanoclusters composed of nanowires was studied by X-ray photo electron microscopy (XPS. This investigation has shown that the ZnS nanoclusters are composed of Zn and S atoms.

Hydrothermal Synthesis of Nanoclusters of ZnS Comprised on Nanowires.

Science.gov (United States)

Ibupoto, Zafar Hussain; Khun, Kimleang; Liu, Xianjie; Willander, Magnus

2013-09-09

Cetyltrimethyl ammonium bromide cationic (CTAB) surfactant was used as template for the synthesis of nanoclusters of ZnS composed of nanowires, by hydrothermal method. The structural and morphological studies were performed by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) techniques. The synthesized ZnS nanoclusters are composed of nanowires and high yield on the substrate was observed. The ZnS nanocrystalline consists of hexagonal phase and polycrystalline in nature. The chemical composition of ZnS nanoclusters composed of nanowires was studied by X-ray photo electron microscopy (XPS). This investigation has shown that the ZnS nanoclusters are composed of Zn and S atoms.

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

The effect of ZnS segregation on Zn-rich CZTS thin film solar cells

International Nuclear Information System (INIS)

Li, Wei; Chen, Jian; Yan, Chang; Hao, Xiaojing

2015-01-01

Highlights: • Secondary phase segregation in CZTS based solar cells has been studied by TEM. • A “Zn layer exchange” behaviour was found in sulphurisation of Zn/SnCu stacked layers. • XAS reveals a large spike-like CBO (>0.86 eV) between CZTS and ZnS. • Larger ZnS secondary phase proportion increases solar cell’s V oc but limits J sc . - Abstract: Analysis of ZnS segregation behaviour and its influence on the device performance has been made on the Zn-rich Cu 2 ZnSnS 4 thin film solar cells. Cross-sectional transmission electron microscopy images reveal that ZnS is the main secondary phase in the Cu 2 ZnSnS 4 layer obtained from a sulphurised Zn/CuSn metallic stack. The excess Zn diffuses from back contact region to top surface of Cu 2 ZnSnS 4 layer accumulating in the form of ZnS. The solar cell with a higher Zn concentration shows a large quantity of isolated ZnS grains at Cu 2 ZnSnS 4 top surface which is close to CdS/Cu 2 ZnSnS 4 heterojunction interface. Soft X-ray absorption spectroscopy indicates a large spike-like conduction band offset between Cu 2 ZnSnS 4 and ZnS. Consequently, such much ZnS precipitates would increase series resistance and generate lower short-circuit current and external quantum efficiency. However, appropriate amount of ZnS at the space charge region of the solar cell has beneficial effects by reducing the heterojunction interface recombination. Therefore, an improved open-circuit voltage and a higher shunt resistance are achieved. This paper provides a possible method to intentionally segregate ZnS at the space charge region by depositing the Zn layer at the bottom of co-sputtered CuSn layer. Although it is difficult to synthesis a pure phase Cu 2 ZnSnS 4 absorber, we can utilise the ZnS secondary phase to improve the Cu 2 ZnSnS 4 solar performance by controlling the Zn-excess amount

Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

Energy Technology Data Exchange (ETDEWEB)

Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

2008-04-03

ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

International Nuclear Information System (INIS)

Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

2015-01-01

We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

Structural and optical properties of nanocrystalline ZnS and ZnS:Al films

Science.gov (United States)

Hurma, T.

2018-06-01

ZnS and ZnS:Al films have been deposited by ultrasonic spray pyrolysis (USP) method. Three different atomic ratios of aluminium were used as the dopant element. The effects of aluminum incorporation on structural and optical properties of the ZnS films have been investigated. The XRD analysis showed that the cubic structure of the ZnS was not much affected by Al doping. The crystal size of the films decreased, as the Al ratio increased. Al incorporation caused an increase in the intensity of ZnS films' peaks observed in Raman spectra and nearly symmetrical peaks were observed. Al doping caused a small decrease in optical band gap of the ZnS film. The coating of ZnS:Al films on the surface was quite good and there were not any deformation in their crystallization levels. Reflectance values of films are about 5% in the visible region but a little decrease is seen with aluminum doping. We can say that Al doping tends to improve the optical properties of the ZnS:Al films when compared with the undoped ZnS.

Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

International Nuclear Information System (INIS)

Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

2008-01-01

ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

Texture-dependent twin formation in nanocrystalline thin Pd films

International Nuclear Information System (INIS)

Wang, B.; Idrissi, H.; Shi, H.; Colla, M.S.; Michotte, S.; Raskin, J.P.; Pardoen, T.; Schryvers, D.

2012-01-01

Nanocrystalline Pd films were produced by electron-beam evaporation and sputter deposition. The electron-beam-evaporated films reveal randomly oriented nanograins with a relatively high density of growth twins, unexpected in view of the high stacking fault energy of Pd. In contrast, sputter-deposited films show a clear 〈1 1 1〉 crystallographic textured nanostructure without twins. These results provide insightful information to guide the generation of microstructures with enhanced strength/ductility balance in high stacking fault energy nanocrystalline metallic thin films.

Releasing cation diffusion in self-limited nanocrystalline defective ceria thin films

DEFF Research Database (Denmark)

Esposito, Vincenzo; Ni, D. W.; Gualandris, Fabrizio

2017-01-01

Acceptor-doped nanocrystalline cerium oxide thin films are mechanically constrained nano-domains, with film/substrate interfacial strain and chemical doping deadlock mass diffusion. In contrast, in this paper we show that chemical elements result in highly unstable thin films under chemical...

Protein-modified nanocrystalline diamond thin films for biosensor applications.

Science.gov (United States)

Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A; Hernando, Jorge; Catharino, Silvia C R; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

2004-10-01

Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

Deposition and characterization of ZnS thin films using chemical bath deposition method in the presence of sodium tartrate as complexing agent

International Nuclear Information System (INIS)

Kassim, A.; Tee, T.W.; Min, H.S.; Nagalingam, S.

2011-01-01

ZnS thin films were deposited on indium tin oxide glass substrate using the chemical bath deposition method. The deposited films were characterized by X-ray diffraction and atomic force microscopy. The influence of bath temperature on the structure and morphology of the thin films was investigated at three different bath temperatures of 60, 70 and 80 deg. C in the presence of sodium tartrate as a complexing agent. The XRD results indicated that the deposited ZnS thin films exhibited a polycrystalline cubic structure. The number of ZnS peaks increased from three to four peaks as the bath temperature was increased from 60 to 80 deg. C based on the XRD patterns. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the bath temperature. The grain size increased as the bath temperature was increased from 60 to 80 deg. C. (author)

Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

2006-01-01

TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

Surfactant and template free synthesis of porous ZnS nanoparticles

International Nuclear Information System (INIS)

Akhtar, Muhammad Saeed; Riaz, Saira; Mehmood, Rana Farhat; Ahmad, Khuram Shahzad; Alghamdi, Yousef; Malik, Mohammad Azad; Naseem, Shahzad

2017-01-01

ZnS thin films composed of porous nanoparticles have been deposited on to glass substrates by combining three simple synthesis methodologies i.e. chemical bath deposition, co-precipitation and spin coating. The XRD results reveal the cubic phase of ZnS thin films crystallized at nano scale. The crystallite size estimated by Scherrer formula was 3.4 nm. The morphology of the samples was analyzed through scanning electron microscopy (SEM) and is evident that thin films are composed of porous nanoparticles with an average size of 150 nm and pores of 40 nm on almost every grain. Crystallinity, phase and morphology were further confirmed via transmission electron microscopy (TEM). The stoichiometry and phase purity of thin films were determined by energy dispersive X-ray (EDX) spectrum and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The surface topography and homogeneity of thin films were analyzed by atomic force microscopy (AFM) and obtained root mean square roughness (4.0326 nm) reveals the morphologically homogeneous growth of ZnS on glass substrates. The UV–Vis spectroscopy and photoluminescence (PL) were carried out to estimate the band gap and observe the emission spectra in order to speculate the viability of ZnS porous nanoparticles in optoelectronic devices and sensors. - Highlights: • ZnS thin films composed of porous nanoparticles have been deposited. • Methodology is based on a combination of three techniques. • Cubic phase ZnS nanoparticles deposited onto glass substrates. • Films characterized by UV/Vis, PL, XRD, SEM, TEM, AFM and XPS.

Surfactant and template free synthesis of porous ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Akhtar, Muhammad Saeed [Division of Science and Technology, University of Education, College Road Township, Lahore (Pakistan); Schools of Materials, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Riaz, Saira [Centre of Excellence in Solid State Physics, University of the Punjab, Lahore-54590 (Pakistan); Mehmood, Rana Farhat [University of Education, Lahore, D.G. Khan Campus, Kangan Road, Dera Ghazi Khan (Pakistan); Ahmad, Khuram Shahzad [Environmental Sciences Department, Fatima Jinnah Women University, The Mall, Rawalpindi (Pakistan); Alghamdi, Yousef [Department of Chemistry, Faculty of Science & Art –Rabigh, King Abdulaziz University, Jeddah (Saudi Arabia); Malik, Mohammad Azad, E-mail: Azad.malik@manchester.ac.uk [Schools of Materials, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Department of Chemistry, University of Zululand, Private Bag X1001, Kwa-Dlangezwa, 3886 (South Africa); Naseem, Shahzad [Centre of Excellence in Solid State Physics, University of the Punjab, Lahore-54590 (Pakistan)

2017-03-01

ZnS thin films composed of porous nanoparticles have been deposited on to glass substrates by combining three simple synthesis methodologies i.e. chemical bath deposition, co-precipitation and spin coating. The XRD results reveal the cubic phase of ZnS thin films crystallized at nano scale. The crystallite size estimated by Scherrer formula was 3.4 nm. The morphology of the samples was analyzed through scanning electron microscopy (SEM) and is evident that thin films are composed of porous nanoparticles with an average size of 150 nm and pores of 40 nm on almost every grain. Crystallinity, phase and morphology were further confirmed via transmission electron microscopy (TEM). The stoichiometry and phase purity of thin films were determined by energy dispersive X-ray (EDX) spectrum and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The surface topography and homogeneity of thin films were analyzed by atomic force microscopy (AFM) and obtained root mean square roughness (4.0326 nm) reveals the morphologically homogeneous growth of ZnS on glass substrates. The UV–Vis spectroscopy and photoluminescence (PL) were carried out to estimate the band gap and observe the emission spectra in order to speculate the viability of ZnS porous nanoparticles in optoelectronic devices and sensors. - Highlights: • ZnS thin films composed of porous nanoparticles have been deposited. • Methodology is based on a combination of three techniques. • Cubic phase ZnS nanoparticles deposited onto glass substrates. • Films characterized by UV/Vis, PL, XRD, SEM, TEM, AFM and XPS.

The radiation response of mesoporous nanocrystalline zirconia thin films

Energy Technology Data Exchange (ETDEWEB)

Manzini, Ayelén M.; Alurralde, Martin A. [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina); Giménez, Gustavo [Instituto Nacional de Tecnología Industrial - CMNB, Av. General Paz 5445, 1650 San Martín, Provincia de Buenos Aires (Argentina); Luca, Vittorio, E-mail: vluca@cnea.gov.ar [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina)

2016-12-15

The next generation of nuclear systems will require materials capable of withstanding hostile chemical, physical and radiation environments over long time-frames. Aside from its chemical and physical stability, crystalline zirconia is one of the most radiation tolerant materials known. Here we report the first ever study of the radiation response of nanocrystalline and mesoporous zirconia and Ce{sup 3+}-stabilized nanocrystalline zirconia (Ce{sub 0.1}Zr{sub 0.9}O{sub 2}) thin films supported on silicon wafers. Zirconia films prepared using the block copolymer Brij-58 as the template had a thickness of around 60–80 nm. In the absence of a stabilizing trivalent cation they consisted of monoclinic and tetragonal zirconia nanocrystals with diameters in the range 8–10 nm. Films stabilized with Ce{sup 3+} contained only the tetragonal phase. The thin films were irradiated with iodine ions of energies of 70 MeV and 132 keV at low fluences (10{sup 13} - 10{sup 14} cm{sup −2}) corresponding to doses of 0.002 and 1.73 dpa respectively, and at 180 keV and high fluences (2 × 10{sup 16} cm{sup −2}) corresponding to 82.4 dpa. The influence of heavy ion irradiation on the nanocrystalline structure was monitored through Rietveld analysis of grazing incidence X-ray diffraction (GIXRD) patterns recorded at angles close to the critical angle to ensure minimum contribution to the diffraction pattern from the substrate. Irradiation of the mesoporous nanocrystalline zirconia thin films with 70 MeV iodine ions, for which electronic energy loss is dominant, resulted in slight changes in phase composition and virtually no change in crystallographic parameters as determined by Rietveld analysis. Iodine ion bombardment in the nuclear energy loss regime (132–180 keV) at low fluences did not provoke significant changes in phase composition or crystallographic parameters. However, at 180 keV and high fluences the monoclinic phase was totally eliminated from the GIXRD

A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

Remediation of arsenic and lead with nanocrystalline zinc sulfide.

Science.gov (United States)

Piquette, Alan; Cannon, Cody; Apblett, Allen W

2012-07-27

Nanocrystalline (1.7 ± 0.3 nm) zinc sulfide with a specific surface area up to 360 m(2) g(-1) was prepared from the thermal decomposition of a single-source precursor, zinc ethylxanthate. Zinc ethylxanthate decomposes to cubic zinc sulfide upon exposure to temperatures greater than or equal to 125 °C. The resulting zinc sulfide was tested as a water impurity extractant. The target impurities used in this study were As(5+), As(3+), and Pb(2+). The reaction of the nanocrystalline ZnS with Pb(2+) proceeds as a replacement reaction where solid PbS is formed and Zn(2+) is released into the aqueous system. Removal of lead to a level of less than two parts per billion is achievable. The results of a detailed kinetics experiment between the ZnS and Pb(2+) are included in this study. Unlike the instance of lead, both As(5+) and As(3+) adsorb on the surface of the ZnS extractant as opposed to an ion-exchange process. An uptake capacity of > 25 mg g(-1) for the removal of As(5+) is possible. The uptake of As(3+) appears to proceed by a slower process than that of the As(5+) with a capacity of nearly 20 mg g(-1). The nanocrystalline zinc sulfide was extremely successful for the removal of arsenic and lead from simulated oil sand tailing pond water.

Structural, Surface Morphology and Optical Properties of ZnS Films by Chemical Bath Deposition at Various Zn/S Molar Ratios

Directory of Open Access Journals (Sweden)

Fei-Peng Yu

2014-01-01

Full Text Available In this study, ZnS thin films were prepared on glass substrates by chemical bath deposition at various Zn/S molar ratios from 1/50 to 1/150. The effects of Zn/S molar ratio in precursor on the characteristics of ZnS films were demonstrated by X-ray diffraction, scanning electron microscopy, optical transmittance, X-ray photoelectron spectroscopy, and Fourier transform infrared spectrometry. It was found that more voids were formed in the ZnS film prepared using the precursor with Zn/S molar ratio of 1/50, and the other ZnS films showed the denser structure as the molar ratio was decreased from 1/75 to 1/150. From the analyses of chemical bonding states, the ZnS phase was indeed formed in these films. Moreover, the ZnO and Zn(OH2 also appeared due to the water absorption on film surface during deposition. This would be helpful to the junction in cell device. With changing the Zn/S molar ratio from 1/75 to 1/150, the ZnS films demonstrate high transmittance of 75–88% in the visible region, indicating the films are potentially useful in photovoltaic applications.

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

International Nuclear Information System (INIS)

Lohmiller, Jochen; Spolenak, Ralph; Gruber, Patric A.

2014-01-01

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

Energy Technology Data Exchange (ETDEWEB)

Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

2014-02-10

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

Science.gov (United States)

Rajpal, Shashikant; Kumar, S. R.

2018-04-01

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

Characterisation of nanocrystalline CdS thin films deposited by CBD

International Nuclear Information System (INIS)

Devi, R.; Sarma, B.K.

2006-01-01

Nanocrystalline thin films of CdS are deposited on glass substrates by chemical bath deposition using polyvinyl alcohol (PVA) matrix solution. Crystallite sizes of the films are determined from X-ray diffraction and are found to vary from 5.4 nm to 7 nm. The band gaps of the nanocrystalline material is determined from the U-V spectrograph and are found to be within the range from 2.6 eV to 2.8 eV as grain size decreases. The band gaps are also determined from the dependence of electrical conductivity of the films with temperature. An increase of molarity decreases the grain size which in turn increases the band gap. (author)

Study of electrostatically self-assembled thin films of CdS and ZnS nanoparticle semiconductors

Science.gov (United States)

Suryajaya

In this work, CdS and ZnS semiconducting colloid nanoparticles coated with organic shell, containing either SO[3-] or NH[2+] groups, were deposited as thin films using the technique of electrostatic self-assembly. The films produced were characterized with UV-vis spectroscopy and spectroscopic ellipsometry - for optical properties; atomic force microscopy (AFM) - for morphology study; mercury probe - for electrical characterisation; and photon counter - for electroluminescence study. UV-vis spectra show a substantial blue shift of the main absorption band of both CdS and ZnS, either in the form of solutions or films, with respect to the bulk materials. The calculation of nanoparticles' radii yields the value of about 1.8 nm for both CdS and ZnS.The fitting of standard ellipsometry data gave the thicknesses (d) of nanoparticle layers of around 5 nm for both CdS and ZnS which corresponds well to the size of particles evaluated from UV-vis spectral data if an additional thickness of the organic shell is taken into account. The values of refractive index (n) and extinction coefficient (k) obtained were about 2.28 and 0.7 at 633 nm wavelength, for both CdS and ZnS.Using total internal reflection (TIRE), the process of alternative deposition of poly-allylamine hydrochloride (PAH) and CdS (or ZnS) layers could be monitored in-situ. The dynamic scan shows that the adsorption kinetic of the first layer of PAH or nanoparticles was slower than that of the next layer. The fitting of TIRE spectra gavethicknesses of about 7 nm and 12 nm for CdS and ZnS, respectively. It supports the suggestion of the formation of three-dimensional aggregates of semiconductor nanoparticles intercalated with polyelectrolyte.AFM images show the formation of large aggregates of nanoparticles, about 40-50 nm, for the films deposited from original colloid solutions, while smaller aggregates, about 12-20 nm, were obtained if the colloid solutions were diluted.Current-voltage (I-V) and capacitance

Effects of deposition time in chemically deposited ZnS films in acidic solution

Energy Technology Data Exchange (ETDEWEB)

Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

2015-08-31

We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

In vitro behaviour of nanocrystalline silver-sputtered thin films

International Nuclear Information System (INIS)

Piedade, A P; Vieira, M T; Martins, A; Silva, F

2007-01-01

Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

Nanocrystalline LiMn2O4 thin film cathode material prepared by polymer spray pyrolysis method for Li-ion battery

International Nuclear Information System (INIS)

Karthick, S.N.; Richard Prabhu Gnanakan, S.; Subramania, A.; Kim, Hee-Je

2010-01-01

Nanocrystalline cubic spinel lithium manganese oxide thin film was prepared by a polymer spray pyrolysis method using lithium acetate and manganese acetate precursor solution and polyethylene glycol-4000 as a polymeric binder. The substrate temperature was selected from the thermogravimetric analysis by finding the complete crystallization temperature of LiMn 2 O 4 precursor sample. The deposited LiMn 2 O 4 thin films were annealed at 450, 500 and 600 o C for 30 min. The thin film annealed at 600 o C was found to be the sufficient temperature to form high phase pure nanocrystalline LiMn 2 O 4 thin film. The formation of cubic spinel thin film was confirmed by X-ray diffraction study. Scanning electron microscopy and atomic force microscopy analysis revealed that the thin film annealed at 600 o C was found to be nanocrystalline in nature and the surface of the films were uniform without any crack. The electrochemical charge/discharge studies of the prepared LiMn 2 O 4 film was found to be better compared to the conventional spray pyrolysed thin film material.

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

Synthesis and characterization of Mn2+-doped ZnS nanoparticles

Indian Academy of Sciences (India)

Keywords. Nanoparticles; nanocomposite; Mn2+-doped ZnS; annealing; X-ray diffrac- tion; FTIR; ultra violet. ... is an important wide band gap semiconductor, has attracted much attention owing to its wide applications ... semiconductor nanoparticles ZnS : Mn2+ is used as phosphors and also in thin film electroluminescent ...

Influence of bismuth doping on the structural and optical properties of ZnS thin films and nanopowders

International Nuclear Information System (INIS)

Mageswari, S; Palanivel, Balan; Dhivya, L; Murugan, Ramaswamy

2013-01-01

Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) thin films and nanopowders synthesized by the simple chemical bath deposition technique were characterized using x-ray diffraction (XRD), scanning electron microscope, energy dispersive x-ray analysis, an atomic force microscope (AFM) and ultraviolet visible (UV–Vis) and photoluminescence spectroscopy. XRD analysis revealed a sphalerite structure for Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) thin films. However, the XRD pattern of Zn (1−x/2) Bi x/3 S (x = 0.09) nanopowder revealed the co-existence of both sphalerite and hexagonal (wurtzite) phases. The crystallite size of Zn (1−x/2) Bi x/3 S (x = 0, 0.03, 0.09) nanopowders were found to be in the range of 2–4 nm. AFM studies revealed that the film quality of Zn (1−x/2) Bi x/3 S (x = 0.09) was relatively good compared to other films. A notable decrease in the band gap of both the thin films and nanopowders were observed with incorporation of Bi 3+ in ZnS. These results indicate that Bi doped ZnS can be used to enhance the photocatalytic H 2 -production activity under visible and UV light. (paper)

Electrochromic properties of nanocrystalline MoO3 thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

2008-01-01

Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Ragini Raj, E-mail: raginirajsingh@gmail.com [Department of Physics, Bhopal University, Bhopal-462026 (India); Department of Physical Electronics, Iby and Aladar Fleishman Faculty of Engineering, Tel-Aviv University, Tel-Aviv-69978 (Israel); Painuly, Diksha [Centre for Nanoscience and Nanotechnology, University of Kerala, Thiruanantpuram, Kerala (India); Pandey, R.K. [Department of Physics, Bhopal University, Bhopal-462026 (India)

2009-07-15

Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 {+-} 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

2011-02-03

Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

Science.gov (United States)

Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

2016-10-01

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

2017-06-01

Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

Nanocrystalline CdTe thin films by electrochemical synthesis

Directory of Open Access Journals (Sweden)

Ramesh S. Kapadnis

2013-03-01

Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

Science.gov (United States)

Wu, K.; Zhang, J. Y.; Li, G.; Wang, Y. Q.; Cui, J. C.; Liu, G.; Sun, J.

2017-11-01

In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ˜20 GPa nm1/2, to an ultrahigh strength of ˜4.4 GPa, approaching ˜50% of its ideal strength.

Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

2012-07-15

The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

Magnetotransport in nanocrystalline SmB6 thin films

Directory of Open Access Journals (Sweden)

Jie Yong

2015-07-01

Full Text Available SmB6 has been predicted to be a prototype of topological Kondo insulator (TKI but its direct experimental evidence as a TKI is still lacking to date. Here we report on our search for the signature of a topological surface state and investigation of the effect of disorder on transport properties in nanocrystalline SmB6 thin films through longitudinal magnetoresistance and Hall coefficient measurements. The magnetoresistance (MR at 2 K is positive and linear (LPMR at low field and become negative and quadratic at higher field. While the negative part is understood from the reduction of the hybridization gap due to Zeeman splitting, the positive dependence is similar to what is observed in other topological insulators (TI. We conclude that the LPMR is a characteristic of TI and is related to the linear dispersion near the Dirac cone. The Hall resistance shows a sign change around 50K. It peaks and becomes nonlinear around 10 K then decreases below 10 K. This indicates that carriers with opposite signs emerge below 50 K. These properties indicate that the surface states are robust and probably topological in our nanocrystalline films.

Photocatalytic properties of nanocrystalline TiO2 thin film with Ag additions

International Nuclear Information System (INIS)

Chang, C.-C.; Lin, C.-K.; Chan, C.-C.; Hsu, C.-S.; Chen, C.-Y.

2006-01-01

In the present study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin coating technique. While, by introducing polystyrene (PS) microspheres, porous TiO 2 /Ag films were obtained after calcining at a temperature of 500 o C. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry, and scanning electron microscopy to reveal the structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. After 500 o C calcination, the microstructure of PS-TiO 2 film without Ag addition exhibited a sponge-like microstructure while significant sintering effect was noticed with Ag additions and the films exhibited a porous microstructure. Meanwhile, coalescence of nanocrystalline anatase-phase TiO 2 can be observed with respect to the sharpening of XRD diffraction peaks. The photodegradation of porous TiO 2 doped with 1 mol% Ag exhibited the best photocatalytic efficiency where 72% methylene blue can be decomposed after UV exposure for 12 h

Influence of nanocrystalline structure and surface properties of TiO2 thin films on the viability of L929 cells

Directory of Open Access Journals (Sweden)

Osękowska Małgorzata

2015-09-01

Full Text Available In this work the physicochemical and biological properties of nanocrystalline TiO2 thin films were investigated. Thin films were prepared by magnetron sputtering method. Their properties were examined by X-ray diffraction, photoelectron spectroscopy, atomic force microscopy, optical transmission method and optical profiler. Moreover, surface wettability and scratch resistance were determined. It was found that as-deposited coatings were nanocrystalline and had TiO2-anatase structure, built from crystallites in size of 24 nm. The surface of the films was homogenous, composed of closely packed grains and hydrophilic. Due to nanocrystalline structure thin films exhibited good scratch resistance. The results were correlated to the biological activity (in vitro of thin films. Morphological changes of mouse fibroblasts (L929 cell line after contact with the surface of TiO2 films were evaluated with the use of a contrast-phase microscope, while their viability was tested by MTT colorimetric assay. The viability of cell line upon contact with the surface of nanocrystalline TiO2 film was comparable to the control sample. L929 cells had homogenous cytoplasm and were forming a confluent monofilm, while lysis and inhibition of cell growth was not observed. Moreover, the viability in contact with surface of examined films was high. This confirms non-cytotoxic effect of TiO2 film surface on mouse fibroblasts.

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Agawane, G.L., E-mail: agawaneganesh@gmail.com [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Vanalakar, S.A. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Electrochemical Mat. Lab., Department of Physics, Shivaji University, Kolhapur 416-004 (India); Gurav, K.V.; Suryawanshi, M.P. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Yun, Jae Ho, E-mail: yunjh92@kier.re.kr [Photovoltaic Research Group, KIER, Jang-Dong, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of)

2014-07-01

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

International Nuclear Information System (INIS)

Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

2011-01-01

A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

Field emission from ZnS nanorods synthesized by radio frequency magnetron sputtering technique

Science.gov (United States)

Ghosh, P. K.; Maiti, U. N.; Jana, S.; Chattopadhyay, K. K.

2006-11-01

The field emission property of zinc sulphides nanorods synthesized in the thin film form on Si substrates has been studied. It is seen that ZnS nanorod thin films showed good field emission properties with a low-macroscopic turn-on field (2.9-6.3 V/μm). ZnS nanorods were synthesized by using radio frequency magnetron sputtering of a polycrystalline prefabricated ZnS target at a relatively higher pressure (10 -1 mbar) and at a lower substrate temperature (233-273 K) without using any catalyst. Transmission electron microscopic image showed the formation of ZnS nanorods with high aspect ratio (>60). The field emission data were analysed using Fowler-Nordhiem theory and the nearly straight-line nature of the F-N plots confirmed cold field emission of electrons. It was also found that the turn-on field decreased with the decrease of nanorod's diameters. The optical properties of the ZnS nanorods were also studied. From the measurements of transmittance of the films deposited on glass substrates, the direct allowed bandgap values have been calculated and they were in the range 3.83-4.03 eV. The thickness of the films was ˜600 nm.

Effect of sample producing conditions on the thermoluminescence properties of ZnS thin films developed by spray pyrolysis method

CERN Document Server

Yazici, A N; Bedir, M

2003-01-01

In this work, the effect of thin film production conditions (substrate temperature and ratio of starting material) was studied on the intensity of thermoluminescence (TL) signal and TL emission spectrum of ZnS samples that were grown by spray pyrolysis method. It was observed that the intensity of TL signal increases with increasing the substrate temperature (T sub s) and reaches a maximum point at the substrate temperature of 500 deg. C with a high ratio of ZnCl sub 2 salt solutions. Secondly, it was observed that the energy level of trap present in ZnS samples is not single-level but instead has a distribution of energy levels. The type of the trap distribution is probably an exponential distribution. However, the distribution of energy levels approaches to single energy level with increasing substrate temperature.

Electrochemically assisted photocatalysis using nanocrystalline semiconductor thin films

Energy Technology Data Exchange (ETDEWEB)

Vinodgopal, K [Department of Chemistry, Indiana University Northwest, Gary, Indiana (United States); Kamat, Prashant V [Notre Dame Radiation Laboratory, Notre Dame, Indiana (United States)

1995-08-01

The principle and usefulness of electrochemically assisted photocatalysis has been illustrated with the examples of 4-chlorophenol and Acid Orange 7 degradation in aqueous solutions. Thin nanocrystalline semiconductor films coated on a conducting glass surface when employed as a photoelectrode in an electrochemical cell are effective for degradation of organic contaminants. The degradation rate can be greatly improved even in the absence of oxygen by applying an anodic bias to the TiO{sub 2} film electrodes. A ten-fold enhancement in the degradation rate was observed when TiO{sub 2} particles were coupled with SnO{sub 2} nanocrystallites at an applied bias potential of 0.83 V versus SCE

EDTA-assisted hydrothermal synthesis, characterization and photoluminescent properties of Mn{sup 2+}-doped ZnS

Energy Technology Data Exchange (ETDEWEB)

Viswanath, R. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta-577 451 (India); Bhojya Naik, H.S., E-mail: hsb_naik@rediffmail.com [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta-577 451 (India); Yashavanth Kumar, G.S.; Prashanth Kumar, P.N.; Arun Kumar, G. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta-577 451 (India); Praveen, R. [Department of Technical Education, Automobile Technology Branch HMS Polytechnic (Government Aided), Tumkur-572102 (India)

2014-09-15

In this paper, undoped ZnS and Mn{sup 2+}-doped ZnS nanocrystals were synthesized through a facile EDTA-assisted hydrothermal method. The as-synthesized powder samples were systematically characterized by employing the following characterization technique such as X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), UV–visible optical absorption and photoluminescence (PL) spectroscopy. X-ray diffraction pattern revealed the presence of material in single phase with average crystallite size of about 3 nm and the material remained cubic over the whole Mn solid solution range. Formation of ultrafine, spherical and homogeneous dispersed nanoparticles with size 4 nm was confirmed by HRTEM analysis. Absorption shoulders of the samples were blue-shifted as compared to bulk ZnS (3.6 eV) with decrease in the energy band gap as the Mn concentration increases. The room temperature photoluminescence (PL) spectra of Mn{sup 2+}-doped ZnS nanocrystalline showed extra peaks in yellow–orange and red region in comparison of pure ZnS. Mn induced PL was suggested with the significant enhancement of the PL intensity in ZnS:Mn nanocrystalline due to Mn incorporation. The red shift in the yellow–orange emission peak can be attributed to the change in band structure due to the formation of ZnS:Mn alloy with increase in Mn{sup 2+} concentration. The yellow–orange emission peak corresponds to the {sup 4}T{sub 1}(excited)–{sup 6}A{sub 1}(ground) transition of Mn{sup 2+} ion in Td symmetry in the ZnS host lattice. The emission peak in the red region may be due to Mn{sup 2+} d–d transitions in (Zn Mn)S matrix as some of the nearest neighbors of Mn{sup 2+} are now predominantly S atoms due to their random positioning nature in the nanocrystallite and Mn–Mn interaction at high Mn{sup 2+} concentration. This type of doped semiconductors with multi-band emission can be made bioactive when they are

Influence of processing conditions on the optical properties of chemically deposited zinc sulphide (ZnS) thin film

Science.gov (United States)

Igweoko, A. E.; Augustine, C.; Idenyi, N. E.; Okorie, B. A.; Anyaegbunam, F. N. C.

2018-03-01

In this paper, we present the influence of post deposition annealing and varying concentration on the optical properties of ZnS thin films fabricated by chemical bath deposition (CBD) at 65 °C from chemical baths comprising NH3/SC(NH2)2/ZnSO4 solutions at pH of about 10. The film samples were annealed at temperatures ranging from 373 K–473 K and the concentration of the film samples vary from 0.1 M–0.7 M. Post deposition annealing and concentration played an important role on the optical parameters investigated which includes absorbance, transmittance, reflectance, absorption coefficient, band gap, refractive index and extinction coefficient. The optical parameters were found to vary with post deposition annealing in one direction and concentration of Zn2+ in the reverse direction. For instance, post deposition annealing increases the band gap from 3.65 eV for as-deposited to 3.70 eV, 3.75 eV and 3.85 eV for annealed at 373 K, 423 K and 473 K respectively whereas concentration of Zn2+ decreases the band gap from 3.95 eV at 0.1 M to 3.90 eV, 3.85 eV and 3.80 eV at 0.3 M, 0.5 M and 0.7 M respectively. The fundamental absorption edge of ZnS thin films shifted toward the highest photon energies (blue shift) after annealing and shifted toward the lowest photon energies (red shift) with increasing Zn ions concentration. A linear relation between band gap energy and Urbach energy was found. After annealing, the Urbach energy increases form 3.10 eV to 3.50 eV and decreases from 3.40 eV to 3.10 eV at varying Zn2+ concentration. The property of wide band gap makes ZnS suitable for buffer layer of film solar cells, permitting more light especially the short wavelength light into absorber layer.

Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n-GaAs/In sandwich structure

Energy Technology Data Exchange (ETDEWEB)

Oezakin, Oguzhan; Guezeldir, Betuel; Saglam, Mustafa [Department of Physics, Science Faculty, Atatuerk University, Erzurum (Turkey); Yildirim, M. Ali [Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey); Ates, Aytunc [Department of Material Engineering, Faculty of Engineering and Natural Sciences, Yildirim Beyazit University, Ankara (Turkey)

2012-04-15

ZnS thin films were deposited on glass substrates using SILAR method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological and optical properties of ZnS thin films was investigated. The crystalline and surface properties of the films improved with increasing film thickness. The energy bandgap values changed from 3.87 to 3.58 eV with increasing film thickness. The refractive index (n), high frequency dielectric constant ({epsilon}{sub {infinity}}) values were calculated by using the energy bandgap values as a function of the film thickness. Also, ZnS thin film was deposited directly on n-GaAs substrate for obtaining the Zn/ZnS/n-GaAs/In sandwich structure at room temperature. The sandwich structure demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves at room temperature. From I-V characteristics n and {phi}{sub b} values were calculated as 1.894 and 0.632 eV at room temperature, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Evaluation of undoped ZnS single crystal materials for x-ray imaging applications

Science.gov (United States)

Saleh, Muad; Lynn, Kelvin G.; McCloy, John S.

2017-05-01

ZnS-based materials have a long history of use as x-ray luminescent materials. ZnS was one of the first discovered scintillators and is reported to have one of the highest scintillator efficiencies. The use of ZnS for high energy luminescence has been thus far limited to thin powder screens, such as ZnS:Ag which is used for detecting alpha radiation, due to opacity to its scintillation light, primarily due to scattering. ZnS in bulk form (chemical vapor deposited, powder processed, and single crystal) has high transmission and low scattering compared to powder screens. In this paper, the performance of single crystalline ZnS is evaluated for low energy x-ray (PLE) of several undoped ZnS single crystals is compared to their Radioluminescence (RL) spectra. It was found that the ZnS emission wavelength varies on the excitation source energy.

Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

Science.gov (United States)

Patra, Chandralina; Das, Debajyoti

2018-04-01

Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

FOR CU-DOPED ZnS 'ALLOY

African Journals Online (AJOL)

2005-01-20

Jan 20, 2005 ... electron transport property of thin films. may be characterized by the conductivity of the ... 3H20 were prepared and added drop by drop' to. 100ml of ZnS .... higher temperatures there is sufficient thermal activation fo~. I some electrons to .... telluride film on crystalline silicon, J. Appl. Phys. 54 (3): 1383-1389.

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

Science.gov (United States)

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

Growth and characterization of high quality ZnS thin films by RF sputtering

Science.gov (United States)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Grain Growth in Nanocrystalline Mg-Al Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

2017-10-05

An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

Energy Technology Data Exchange (ETDEWEB)

Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

2015-04-15

Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

Science.gov (United States)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

In-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Hartung, David; Gather, Florian; Kronenberger, Achim; Kuhl, Florian; Meyer, Bruno K.; Klar, Peter J. [I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

2012-07-01

In this work we present in-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films. Borosilicate glass with a thickness of 50 microns and low thermal conductivity for improving the signal to noise ratio was used as substrate material. The above different films are deposited by rf-sputtering and have a thickness of about 1 micron. Our approach is a steady-state measurement. A wide metal wire on the film is used as a heater and two parallel lying narrow wires at distances of 100 microns and 200 microns from the heater wire, respectively, serve as the temperature sensors. The wire structure design is transfered on to the thin films by photolithography and metal evaporation. Measurements of the in-plane thermal conductivities of the above mentioned materials are presented and compared with corresponding results in the literature.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

Science.gov (United States)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Bandgap engineering by substitution of S by Se in nanostructured ZnS1-xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

International Nuclear Information System (INIS)

Sadekar, Harishchandra K.; Ghule, Anil Vithal; Sharma, Ramphal

2011-01-01

Highlights: → ZnS 1-x Se x (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. → Structural, optical and electrical properties are studied. → Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. → Wide band gap material (ZnS 1-x Se x ) is useful for photosensor and solar cell applications. → It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS 1-x Se x with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E g ) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS 1-x Se x thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic material such as CdS.

Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

OpenAIRE

Heimdal, Carl Philip J

2014-01-01

The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

New route to the fabrication of nanocrystalline diamond films

International Nuclear Information System (INIS)

Varshney, Deepak; Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

2014-01-01

Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

2015-10-15

Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

Science.gov (United States)

Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

2015-03-01

We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

2015-09-15

Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

Directory of Open Access Journals (Sweden)

Sutichai Chaisitsak

2011-07-01

Full Text Available This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG sensors by doping with fluorine (F. Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer. The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

Energy Technology Data Exchange (ETDEWEB)

Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

2015-01-01

Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

Effect of helium gas pressure on dc conduction mechanism and EMI shielding properties of nanocrystalline carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Rawal, Ishpal, E-mail: rawalishpal@gmail.com [Department of Physics, Kirori Mal College, University of Delhi, Delhi 110007 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Singh, Avanish Pratap; Dhawan, S.K. [Polymeric and Soft Materials Group, Physics Engineering of Carbon, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2015-05-05

This paper reports the effect of helium partial pressures ∼1.2 × 10{sup −5} (base pressure), 1.4 × 10{sup −4}, 8.6 × 10{sup −3} and 0.1 mbar on the variable range hopping conduction in nanocrystalline carbon thin films deposited by filtered cathodic jet carbon arc technique. High resolution transmission electron microscopy studies suggest the random distribution of nanocrystallites (∼3–7 nm) in the amorphous matrix. The DC conduction behavior of the deposited nanocrystalline films has been studied in the light of Mott's variable range hopping (VRH) model and found to obey three dimensional VRH conduction. The randomly distributed nanocrystallites in amorphous matrix may lead to change in the distribution of density of states near Fermi level and hence, the conduction behavior. The enhanced electrical conductivity of the deposited films due to the helium environment makes them suitable for electromagnetic interference shielding applications. The sample deposited at a helium partial pressure of 0.1 mbar has a value of shielding effectiveness ∼7.84 dB at 18 GHz frequency. - Highlights: • Nanocrystalline carbon thin films (NCTF) has been deposited by FCJCA technique. • Effect of helium gas pressure has been studied on the properties of NCTF. • Investigation of EMI shielding properties of NCTF has been carried out.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Structural and nanomechanical properties of nanocrystalline carbon thin films for photodetection

Energy Technology Data Exchange (ETDEWEB)

Rawal, Ishpal [Department of Physics, Kirorimal College, University of Delhi, Delhi 110007 (India); Panwar, Omvir Singh, E-mail: ospanwar@mail.nplindia.ernet.in; Tripathi, Ravi Kant; Chockalingam, Sreekumar [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, Avanish Kumar [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Mahesh [Ultrafast Optoelectronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2015-05-15

This paper reports the effect of helium gas pressure upon the structural, nanomechanical, and photoconductive properties of nanocrystalline carbon thin (NCT) films deposited by the filtered cathodic jet carbon arc technique. High-resolution transmission electron microscopy images confirm the nanocrystalline nature of the deposited films with different crystallite sizes (3–7 nm). The chemical structure of the deposited films is further analyzed by x-ray photoelectron spectroscopy and Raman spectroscopy, which suggest that the deposited films change from graphitelike to diamondlike, increasing in sp{sup 3} content, with a minor change in the dilution of the inert gas (helium). The graphitic character is regained upon higher dilution of the helium gas, whereupon the films exhibit an increase in sp{sup 2} content. The nanomechanical measurements show that the film deposited at a helium partial pressure of 2.2 × 10{sup −4} has the highest value of hardness (37.39 GPa) and elastic modulus (320.50 GPa). At a light intensity of 100 mW/cm{sup 2}, the NCT films deposited at 2.2 × 10{sup −4} and 0.1 mbar partial pressures of helium gas exhibit good photoresponses of 2.2% and 3.6%, respectively.

Nanocrystalline Sr2CeO4 thin films grown on silicon by laser ablation

International Nuclear Information System (INIS)

Perea, Nestor; Hirata, G.A.

2006-01-01

Blue-white luminescent Sr 2 CeO 4 thin films were deposited by using pulsed laser ablation (λ = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr 2 CeO 4 grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr 2 CeO 4 however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems

Anisotropic optical properties of ZnS thin films with zigzag structure

Indian Academy of Sciences (India)

2017-08-18

Aug 18, 2017 ... shapes can be produced. In the earliest efforts .... Figure 2. (a) XRD patterns of ZnS films under different conditions .... are presented in figure 6a–c. In figure 6 ..... [13] Woo S-H and Hwangbo C K 2006 J. Korean Phys. Soc. 48.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

International Nuclear Information System (INIS)

Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

2014-01-01

Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

International Nuclear Information System (INIS)

Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

2013-01-01

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

Energy Technology Data Exchange (ETDEWEB)

Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Influence of humidity on the growth characteristics and properties of chemical bath-deposited ZnS thin films

Energy Technology Data Exchange (ETDEWEB)

Lin, Yi-Cheng; Chao, Yen-Tai [Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan (China); Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Dacun, Changhua 51591, Taiwan (China)

2014-07-01

In this study, the effect of humidity on the growth characteristics and properties of chemical bath-deposited ZnS thin films was systematically investigated. All deposition was conducted by an open CBD system under various relative humidity levels (RH) or by a hermetic CBD system as a comparison. It shows, for films deposited by an open system, the ambient humidity plays an important role in the quality of the resultant films. Damp environments lead to powdery films. Generally, all films prepared in this study using NH{sub 3} and hydrazine hydrate as the complexing agents were amorphous or poorly crystalline. For an open system, the [H{sup +}] from the dissolved carbon dioxide in the air competes with the ammonium ions in the bath solution. According to Le Châtelier's principle, more ammonia was consumed, which favors the free [Zn{sup +2}] in the solution, facilitating the homogeneous precipitation of Zn(OH){sub 2} and giving rise to a powdery film. The x-ray photoelectron spectrum shows, for an open system, the content of Zn–O compounds in the form of Zn(OH){sub 2} and ZnO, etc., is increased by the relative humidity of the environment. The visible transmittance is reduced by RH. The higher optical band gap of the as-deposited films could be attributed to the quantum confinement effects due to the small grain size of the polycrystalline ZnS films over the substrates.

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

Science.gov (United States)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-01-01

Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

Chemical Bath Deposition of PbS:Hg2+ Nanocrystalline Thin Films

Directory of Open Access Journals (Sweden)

R. Palomino-Merino

2013-01-01

Full Text Available Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB face. The grain size determined by using X-rays spectra for undoped samples was found to be ~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate the Eg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band ~135 cm−1 displaying only a PbS ZB structure.

Intermixing at the heterointerface between ZnS /Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.; Jung, Ch.

2006-09-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. After identifying the deposited Zn compound, as ZnS /Zn(S,O) bilayer buffer in former investigations [M. Bär et al., J. Appl. Phys. 99, 123503 (2006)], this time the focus lies on potential diffusion/intermixing processes at the buffer/absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x-ray photoelectron and x-ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy (PES) measurements were also conducted using tunable monochromatized synchrotron radiation in order to gain depth-resolved information. The buffer side of the buffer/absorber heterointerface was investigated by means of the characterization of Zn(S ,O)/ZnS/CIS structures where the ZnS /Zn(S,O) bilayer buffer was deposited successively by different deposition times. In order to make the (in terms of PES information depth) deeply buried absorber side of the buffer/absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HClaq. We found indications that while (out-leached) Cu from the absorber layer forms together with the educts in the chemical bath a [Zn(1-Z ),Cu2Z]S-like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn(S ,O)/ZnS/CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in

Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

Science.gov (United States)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

Nanocrystalline Sr{sub 2}CeO{sub 4} thin films grown on silicon by laser ablation

Energy Technology Data Exchange (ETDEWEB)

Perea, Nestor [Posgrado en Fisica de Materiales, CICESE-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada, B.C., 22860 (Mexico); Hirata, G.A. [Centro de Ciencias de la Materia Condensada-UNAM, Km. 107 Carretera Tijuana Ensenada, Ensenada, B.C. 22860 (Mexico)]. E-mail: hirata@ccmc.unam.mx

2006-02-21

Blue-white luminescent Sr{sub 2}CeO{sub 4} thin films were deposited by using pulsed laser ablation ({lambda} = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr{sub 2}CeO{sub 4} grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr{sub 2}CeO{sub 4} however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems.

Effect of texture and grain size on the residual stress of nanocrystalline thin films

Science.gov (United States)

Cao, Lei; Sengupta, Arkaprabha; Pantuso, Daniel; Koslowski, Marisol

2017-10-01

Residual stresses develop in thin film interconnects mainly as a result of deposition conditions and multiple thermal loading cycles during the manufacturing flow. Understanding the relation between the distribution of residual stress and the interconnect microstructure is of key importance to manage the nucleation and growth of defects that can lead to failure under reliability testing and use conditions. Dislocation dynamics simulations are performed in nanocrystalline copper subjected to cyclic loading to quantify the distribution of residual stresses as a function of grain misorientation and grain size distribution. The outcomes of this work help to evaluate the effect of microstructure in thin films failure by identifying potential voiding sites. Furthermore, the simulations show how dislocation structures are influenced by texture and grain size distribution that affect the residual stress. For example, when dislocation loops reach the opposite grain boundary during loading, these dislocations remain locked during unloading.

Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H. W.; Lux Steiner, M.C

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine, has helped to achieve a similar efficiency as respective CdS buffered reference devices. In order to shed light on the differences of other Zn compound buffers deposited in con...

Spray-ILGAR {sup registered} deposition of controllable ZnS nanodots and application as passivation/point contact at the In{sub 2}S{sub 3}/Cu(In,Ga)(S,Se){sub 2} junction in thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Yanpeng Fu

2012-03-15

The spray ion layer gas reaction (Spray-ILGAR) technique produces homogeneous compact metal chalcogenide films used as buffer layers for thin film solar cells with high efficiencies. It was a great challenge to elaborate this method for the deposition of nanodots. This thesis shows that high quality, uncoated, monodisperse and sub 10 nm ZnS nanodots with controllable dot density and size (to some extend) can be prepared at the requisite low temperature by this sequential, cyclic and low cost method which can be scaled up for industrial in-line production. In addition, by this Spray-ILGAR technique, a structured buffer layer, composed of ZnS nanodots covered by a closed In{sub 2}S{sub 3} film, has been introduced as a defect passivation / point contact layer at the Cu(In,Ga)(S,Se){sub 2} (CIGSSe) absorber interface. The ZnS nanodots are deposited starting from nebulizing an aqueous Zn acetylacetonate (Zn(acac){sub 2}) solution followed by H{sub 2}S sulfurization. The unique sequential process allows the formation of the nanodot film with good properties. The choice of the process parameters (e.g. solvent, temperature, concentration) allows the control of particle density and partly also of particle size. These nanodots are rather homogeneous in size, shape and composition, and tend to keep maximum distance from each other. In contrast, ZnS nanodots deposited by a continuous spray chemical vapor deposition (Spray-CVD) are irregular in shape with inclusions of ZnO. The mechanism behind the ZnS nanodots formation is studied in two ways. On one hand, the decomposition mechanism of Zn(acac){sub 2} on the hot substrate in the spray based processes is studied by means of in-situ mass spectroscopy. On the other hand, by interpretation of the scanning electron microscopy (SEM), energy filtered transmission electron microscopy results (EF-TEM), it is possible to elucidate the self-limiting growth of ZnS nanodots in the Spray-ILGAR and Spray-CVD processes. The fundamental

SHI induced enhancement in green emission from nanocrystalline CdS thin films for photonic applications

International Nuclear Information System (INIS)

Kumar, Pragati; Saxena, Nupur; Chandra, Ramesh; Gao, Kun; Zhou, Shengqiang; Agarwal, Avinash; Singh, Fouran; Gupta, Vinay; Kanjilal, D.

2014-01-01

Intense green emission is reported from nanocrystalline CdS thin films grown by pulsed laser deposition. The effect of ion beam induced dense electronic excitation on luminescence property of CdS films is explored under irradiation using 70 MeV 58 Ni 6+ ions. It is found that swift heavy ion beam irradiation enhances the emission intensity by an order of 1 and broadens the emission range. This feature is extremely useful to enhance the performance of different photonic devices like light emitting diodes and lasers, as well as luminescence based sensors. To examine the role of energy relaxation process of swift heavy ions in creation/annihilation of different defect levels, multi-peaks are fitted in photoluminescence spectra using a Gaussian function. The variation of contribution of different emissions in green emission with ion fluence is studied. Origin of enhancement in green emission is supported by various characterization techniques like UV–visible absorption spectroscopy, glancing angle X-ray diffraction, micro-Raman spectroscopy and transmission electron microscopy. A possible mechanism of enhanced GE due to ion beam irradiation is proposed on the basis of existing models. -- Highlights: • Room temperature green luminescence nanocrystalline CdS thin films grown by pulsed laser deposition. • Enhanced green emission by means of swift heavy ion irradiation. • Multipeak fitting of photoluminescence spectra using a Gaussian function. • Variation of area contributed by different emissions in green emission is studied with respect to ion fluence. • Mechanism of enhanced green emission is discussed based on creation/annihilation of defects due to ion beam irradiation

SHI induced enhancement in green emission from nanocrystalline CdS thin films for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Shahmat Ganj Road, Bareilly 243005, Uttar Pradesh (India); Saxena, Nupur [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Chandra, Ramesh [Institute Instrumentation Centre, Indian Institute of Technology, Roorkee 247667 (India); Gao, Kun; Zhou, Shengqiang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden (Germany); Agarwal, Avinash [Department of Physics, Bareilly College, Shahmat Ganj Road, Bareilly 243005, Uttar Pradesh (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Gupta, Vinay [Department of Physics and Astrophysics, Delhi University, Delhi 110007 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India)

2014-03-15

Intense green emission is reported from nanocrystalline CdS thin films grown by pulsed laser deposition. The effect of ion beam induced dense electronic excitation on luminescence property of CdS films is explored under irradiation using 70 MeV {sup 58}Ni{sup 6+} ions. It is found that swift heavy ion beam irradiation enhances the emission intensity by an order of 1 and broadens the emission range. This feature is extremely useful to enhance the performance of different photonic devices like light emitting diodes and lasers, as well as luminescence based sensors. To examine the role of energy relaxation process of swift heavy ions in creation/annihilation of different defect levels, multi-peaks are fitted in photoluminescence spectra using a Gaussian function. The variation of contribution of different emissions in green emission with ion fluence is studied. Origin of enhancement in green emission is supported by various characterization techniques like UV–visible absorption spectroscopy, glancing angle X-ray diffraction, micro-Raman spectroscopy and transmission electron microscopy. A possible mechanism of enhanced GE due to ion beam irradiation is proposed on the basis of existing models. -- Highlights: • Room temperature green luminescence nanocrystalline CdS thin films grown by pulsed laser deposition. • Enhanced green emission by means of swift heavy ion irradiation. • Multipeak fitting of photoluminescence spectra using a Gaussian function. • Variation of area contributed by different emissions in green emission is studied with respect to ion fluence. • Mechanism of enhanced green emission is discussed based on creation/annihilation of defects due to ion beam irradiation.

Guided assembly of nanoparticles on electrostatically charged nanocrystalline diamond thin films

Directory of Open Access Journals (Sweden)

Verveniotis Elisseos

2011-01-01

Full Text Available Abstract We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp2 phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp2 phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems.

Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Mahajan, S. V.; Upadhye, D. S.; Bagul, S. B. [Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Shaikh, S. U.; Birajadar, R. B.; Siddiqui, F. Y.; Huse, N. P. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Sharma, R. B., E-mail: ramphalsharma@yahoo.com, E-mail: rps.phy@gmail.com [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)

2015-06-24

Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.

Nanocrystalline Iron-Cobalt Alloys for High Saturation Indutance

Science.gov (United States)

2016-02-24

film deposited just like the pick-up of a turn-table music player. The contact pads provide the electrical contacts to the starting and end point of...anisotropy using the geometry of the thin toroid. We have shown experimentally that the thin film toroid calculations may be applicable to up to millimeter...thin film as well as bulk devices. 15. SUBJECT TERMS Micromagnetic Calculations, Nanocrystalline cobalt-iron, Thin Film Toroids 16. SECURITY

Thermoluminescence properties of graphene–nano ZnS composite

International Nuclear Information System (INIS)

Sharma, Geeta; Gosavi, S.W.

2014-01-01

This work describes the thermoluminescence (TL) of graphene oxide (GO), reduced graphene oxide (RGO) and graphene–nano ZnS composite. Graphene oxide was synthesized using Hummer's method and then reduced to graphene by hydrazine hydrate. G–ZnS was synthesized via in-situ reduction of graphene oxide (GO) and zinc nitrate [Zn(NO 3 ) 2 ] by sodium sulfide (Na 2 S). The structures of samples were characterized by X-ray diffraction (XRD) and transmission electron microscope (TEM). XRD pattern confirmed the formation of graphene oxide, reduced graphene oxide and G–ZnS lattice. The p-XRD spectrum of G–ZnS shows peaks of ZnS superimposed on those of graphene and the particle size of ZnS in the complex is less than 10 nm. Ultra thin graphene and graphene oxide sheets with size ranging between tens to several hundreds of square nanometers are observed in TEM images. The TEM micrographs of G–ZnS show that ZnS particles are embedded in graphene sheets and the average particle size of ZnS particles in the composite is less than 10 nm. Samples of RGO, GO and G–ZnS were exposed to different doses of γ-rays in the range of 1 Gy to 50 kGy. The reduced graphene oxide (RGO) did not show any thermoluminescence emission. The thermoluminescence glow curve of GO has a single broad peak whose peak position varied between 500 and 550 K with an absorbed dose increasing from 1 Gy to 5000 Gy. GO shows most intense TL peak, positioned at 523.6 K for a dose of 10 kGy. The glow curves of G–ZnS over the entire range of irradiation have single peak positioned between 492 and 527 K with variation in dose from 1 Gy to 50 kGy. G–ZnS shows the most intense TL glow curve for a dose of 50 kGy. The TL response curve of G–ZnS is found to be linear over a larger dose range from 1 Gy to 50 kGy whereas the response curve of GO shows linearity only at low doses up to 100 Gy. -- Highlights: • Graphene oxide, reduced graphene oxide and graphene–nano ZnS were synthesized. • TL of

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Observation of ZnS nanoparticles sputtered from ZnS films under 2 MeV Au irradiation

Science.gov (United States)

Kuiri, P. K.; Joseph, B.; Ghatak, J.; Lenka, H. P.; Sahu, G.; Acharya, B. S.; Mahapatra, D. P.

2006-07-01

ZnS nanoparticles have been observed on catcher foils due to 2 MeV Au ion irradiation of ZnS films thermally evaporated on Si(1 0 0) substrates. The structure and size distribution of nanoclusters collected were studied using transmission electron microscopy for irradiation fluences in the range of 1 × 10 11-1 × 10 15 ions cm -2. The nanoclusters were found to have a hexagonal wurtzite structure. Optical absorption measurements on similarly deposited ZnS on silica glass indicate the film to be also composed of hexagonal wurtzite ZnS. Based on this and available data we argue that the observed nanoparticles on the catcher foils are the results of shock waves induced emission of material chunks with the same atomic coordination as in the target.

Mobility lifetime product in doped and undoped nanocrystalline CdSe

International Nuclear Information System (INIS)

Tripathi, S.K.; Al-Kabbi, Alaa S.; Sharma, Kriti; Saini, G.S.S.

2013-01-01

This paper reports the effect of doping on the charge transport in nanocrystalline CdSe thin film. The X-ray study confirms that the doping is achieved and the physical properties are improved. The energy resolution of a semiconductor radiation detector depends on the charge transport properties of the semiconductor and the mobility-lifetime (μτ) product is a key figure of merit for the charge transport. μτ product in nanocrystalline CdSe, CdSe:In and CdSe:Zn thin films has been estimated from temperature dependence of the photoconductivity, which increases with increase in temperature and doping. Also, μτ product of electrons in pure and doped nanocrystalline CdSe thin films has been determined by spectral photoconductivity at different applied voltages. Both the μτ and photoconductivity increase linearly with the bias voltage but the wavelength dependence remains qualitatively similar in all samples. The μτ products increase at photon energies > energy gap, which indicates that the recombination process depends on the excitation energy. The doped CdSe thin films have higher drift length in comparison with undoped films which suggest that these thin films can be used in charge collecting devices. - Highlights: • The structure of thin films has been studied using X-ray diffraction. • Spectral dependence of μτ product in pure and doped nc-CdSe thin films is studied. • The mobility-lifetime product shows dependence on temperature and doping type. • The drift length increases linearly with increasing applied field and doping. • The transport properties of nc-CdSe thin films are enhanced with doping

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

International Nuclear Information System (INIS)

Emam-Ismail, M.; El-Hagary, M.; Shaaban, E.R.; Al-Hedeib, A.M.

2012-01-01

Highlights: ► The structural and optical properties of ZnSeTe thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of ZnSe 1−x Te x (0.0 ≤ x ≤ 1.0) were deposited on glass substrate using electron beam deposition technique. The structure of the prepared films was examined using X-ray diffraction technique and revealed that the deposited films have polycrystalline zinc blend structure with lattice constant, a, increasing linearly from 0.55816 to 0.59989 nm as x varies from 0 to 1. The optical studies of the nanocrystalline ZnSe 1−x Te x films showed that the refractive index increases and fundamental band gap E g decreases from 2.58 to 2.21 eV as the tellurium concentration increases from 0 to 1. Furthermore, it was also found that the variation of E g with composition shows quadratic behavior with bowing parameter equal to 0.105. In addition, the thickness and annealing effects on the structure and optical properties of the deposited films were also investigated. The refractive index dispersion and its dependence on composition were discussed in terms of single oscillator model proposed by Wemple–DiDomenico.

Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

International Nuclear Information System (INIS)

Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

2011-01-01

The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

International Nuclear Information System (INIS)

Kumar, Pragati; Agarwal, Avinash; Saxena, Nupur; Singh, Fouran; Gupta, Vinay

2014-01-01

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ a /Γ b ) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Investigation of the growth and in situ heating transmission electron microscopy analysis of Ag2S-catalyzed ZnS nanowires

Science.gov (United States)

Kim, Jung Han; Kim, Jong Gu; Song, Junghyun; Bae, Tae-Sung; Kim, Kyou-Hyun; Lee, Young-Seak; Pang, Yoonsoo; Oh, Kyu Hwan; Chung, Hee-Suk

2018-04-01

We investigated the semiconductor-catalyzed formation of semiconductor nanowires (NWs) - silver sulfide (Ag2S)-catalyzed zinc sulfide (ZnS) NWs - based on a vapor-liquid-solid (VLS) growth mechanism through metal-organic chemical vapor deposition (MOCVD) with a Ag thin film. The Ag2S-catalyzed ZnS NWs were confirmed to have a wurtzite structure with a width and length in the range of ∼30 nm to ∼80 nm and ∼1 μm, respectively. Using extensive transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) analyses from plane and cross-sectional viewpoints, the ZnS NWs were determined to have a c-axis, [0001] growth direction. In addition, the catalyst at the top of the ZnS NWs was determined to consist of a Ag2S phase. To support the Ag2S-catalyzed growth of the ZnS NWs by a VLS reaction, an in situ heating TEM experiment was conducted from room temperature to 840 °C. During the experiment, the melting of the Ag2S catalyst in the direction of the ZnS NWs was first observed at approximately 480 °C along with the formation of a carbon (C) shell. Subsequently, the Ag2S catalyst melted completely into the ZnS NWs at approximately 825 °C. As the temperature further increased, the Ag2S and ZnS NWs continuously melted and vaporized up to 840 °C, leaving only the C shell behind. Finally, a possible growth mechanism was proposed based on the structural and chemical investigations.

Synthesis of nanocrystalline ceria thin films by low-temperature thermal decomposition of Ce-propionate

International Nuclear Information System (INIS)

Roura, P.; Farjas, J.; Ricart, S.; Aklalouch, M.; Guzman, R.; Arbiol, J.; Puig, T.; Calleja, A.; Peña-Rodríguez, O.; Garriga, M.; Obradors, X.

2012-01-01

Thin films of Ce-propionate (thickness below 20 nm) have been deposited by spin coating and pyrolysed into ceria at temperatures below 200 °C. After 1 h of thermal treatment, no signature of the vibrational modes of Ce-propionate is detected by infrared spectroscopy, indicating that decomposition has been completed. The resulting ceria films are nanocrystalline as revealed by X-ray diffraction (average grain size of 2–2.5 nm) and confirmed by microscopy. They are transparent in the visible region and show the characteristic band gap absorption below 400 nm. A direct band gap energy of 3.50 ± 0.05 eV has been deduced irrespective of the pyrolysis temperature (160, 180 and 200 °C).

Starch-assisted synthesis and optical properties of ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Tian, Xiuying, E-mail: xiuyingt@yahoo.com; Wen, Jin; Wang, Shumei; Hu, Jilin; Li, Jing; Peng, Hongxia

2016-05-15

Highlights: • ZnS spherical nanostructure was prepared via starch-assisted method. • The crystalline lattice structure, morphologies, chemical and optical properties of ZnS nanoparticles. • The forming mechanism of ZnS nanoparticles. • ZnS spherical nano-structure can show blue emission at 460–500 nm. - Abstract: ZnS nanoparticles are fabricated via starch-assisted method. The effects of different starch amounts on structure and properties of samples are investigated, and the forming mechanism of ZnS nanoparticles is discussed. By X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–vis) spectroscopy and fluorescence (FL) spectrometer, their phases, crystalline lattice structure, morphologies, chemical and optical properties are characterized. The results show that ZnS has polycrystalline spherical structure with the mean diameter of 130 nm. Sample without starch reveals irregular aggregates with particle size distribution of 0.5–2 μm. The band gap value of ZnS is 3.97 eV. The chemical interaction exists between starch molecules and ZnS nanoparticles by hydrogen bonds. The stronger FL emission peaks of ZnS synthesized with starch, indicate a larger content of sulfur vacancies or defects than ZnS synthesized without starch.

Starch-assisted synthesis and optical properties of ZnS nanoparticles

International Nuclear Information System (INIS)

Tian, Xiuying; Wen, Jin; Wang, Shumei; Hu, Jilin; Li, Jing; Peng, Hongxia

2016-01-01

Highlights: • ZnS spherical nanostructure was prepared via starch-assisted method. • The crystalline lattice structure, morphologies, chemical and optical properties of ZnS nanoparticles. • The forming mechanism of ZnS nanoparticles. • ZnS spherical nano-structure can show blue emission at 460–500 nm. - Abstract: ZnS nanoparticles are fabricated via starch-assisted method. The effects of different starch amounts on structure and properties of samples are investigated, and the forming mechanism of ZnS nanoparticles is discussed. By X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–vis) spectroscopy and fluorescence (FL) spectrometer, their phases, crystalline lattice structure, morphologies, chemical and optical properties are characterized. The results show that ZnS has polycrystalline spherical structure with the mean diameter of 130 nm. Sample without starch reveals irregular aggregates with particle size distribution of 0.5–2 μm. The band gap value of ZnS is 3.97 eV. The chemical interaction exists between starch molecules and ZnS nanoparticles by hydrogen bonds. The stronger FL emission peaks of ZnS synthesized with starch, indicate a larger content of sulfur vacancies or defects than ZnS synthesized without starch.

Flexible pressure sensor based on graphene aerogel microstructures functionalized with CdS nanocrystalline thin film

Science.gov (United States)

Plesco, Irina; Dragoman, Mircea; Strobel, Julian; Ghimpu, Lidia; Schütt, Fabian; Dinescu, Adrian; Ursaki, Veaceslav; Kienle, Lorenz; Adelung, Rainer; Tiginyanu, Ion

2018-05-01

In this paper, we report on functionalization of graphene aerogel with a CdS thin film deposited by magnetron sputtering and on the development of flexible pressure sensors based on ultra-lightweight CdS-aerogel nanocomposite. Analysis by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray analysis disclose the uniform deposition of nanocrystalline CdS films with quasi-stoichiometric composition. The piezoresistive response of the aforementioned nanocomposite in the pressure range from 1 to 5 atm is found to be more than one order of magnitude higher than that inherent to suspended graphene membranes, leading to an average sensitivity as high as 3.2 × 10-4 kPa-1.

Solar cells based on electrodeposited thin films of ZnS, CdS, CdSSe and CdTe

Science.gov (United States)

Weerasinghe, Ajith R.

The motivations of this research were to produce increased efficiency and low-cost solar cells. The production efficiency of Si solar cells has almost reached their theoretical limit, and reducing the manufacturing cost of Si solar cells is difficult to achieve due to the high-energy usage in material purifying and processing stages. Due to the low usage of materials and input energy, thin film solar cells have the potential to reduce the costs. CdS/CdTe thin film solar cells are already the cheapest on $/W basis. The cost of CdTe solar cells can be further reduced if all the semiconducting layers are fabricated using the electrodeposition (ED) method. ED method is scalable, low in the usage of energy and raw materials. These benefits lead to the cost effective production of semiconductors. The conventional method of fabricating CdS layers produces Cd containing waste solutions routinely, which adds to the cost of solar cells.ZnS, CdS and CdS(i-X)Sex buffer and window layers and CdTe absorber layers have been successfully electrodeposited and explored under this research investigation. These layers were fully characterised using complementary techniques to evaluate the material properties. Photoelectrochemical (PEC) studies, optical absorption, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, atomic force microscopy (AFM) and Raman spectroscopy were utilised to evaluate the material properties of these solid thin film layers. ZnS and CdS thin film layers were electrodeposited from Na-free chemical precursors to avoid the group I element (Na) to reduce deterioration of CdTe devices. Deposition parameters such as, growth substrates, temperature, pH, growth cathodic voltage, stirring rate, time and chemical concentrations were identified to fabricate the above semiconductors. To further optimise these layers, a heat treatment process specific to the material was developed. In addition

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com; Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly 243 005, Uttar Pradesh (India); Saxena, Nupur; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

2014-07-28

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

International Nuclear Information System (INIS)

Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

2004-01-01

Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Directory of Open Access Journals (Sweden)

Md. Billal Hosen

2017-10-01

Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

Photoelectrocatalytic degradation of oxalic acid by spray deposited nanocrystalline zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S.S.; Shinde, P.S.; Sapkal, R.T.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

2012-01-01

Highlights: ► Influence of substrate temperature onto the physico-chemical properties. ► Photochemical, structural, luminescent, optoelectrical and thermal properties. ► The kinetics of oxalic acid degradation with reaction mechanism. ► Extent of mineralization by COD and TOC. - Abstract: The high quality nano-crystalline zinc oxide thin films are deposited onto corning glasses by spray pyrolysis technique. The influence of reaction temperature onto their photoelectrochemical, structural, morphological, optoelectronic, luminescence and thermal properties has been investigated. The structural characteristics studied by X-ray diffractometry has complemented by resistivity measurements and UV–Vis spectroscopy. The photoelectrochemical activity shows enhancement in short circuit current (I sc = 0.357 mA) and open circuit voltage (V oc = 0.48 V). Direct band gap calculated by considering R and T values of ZnO thin films increases from 3.14–3.21 eV exhibiting a slight blue shift in band edge. Three characteristic luminescence peaks having near band-edge, blue and green emission are observed in the photoluminescence spectra. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in films. Photocatalytic degradation of oxalic acid followed with reaction mechanism by using zinc oxide photoelectrode under solar illumination has been investigated.

Co+ -ion implantation induced doping of nanocrystalline CdS thin films: structural, optical, and vibrational properties

International Nuclear Information System (INIS)

Chandramohan, S.; Sarangi, S.N.; Majumder, S.; Som, T.; Kanjilal, A.; Sathyamoorthy, R.

2009-01-01

Full text: Transition metal (Mn, Fe, Co and Ni) doped CdS nanostructures and nanocrystalline thin films have attracted much attention due to their anticipated applications in magneto-optical, non-volatile memory and future spintronics devices. Introduction of impurities in substitutional positions is highly desirable for such applications. Ion implantation is known to provide many advantages over conventional methods for efficient doping and possibility of its seamless integration with device processing steps. It is not governed by equilibrium thermodynamics and offers the advantages of high spatial selectivity and to overcome the solubility limits. In this communication, we report on modifications of structural morphological, optical, and vibrational properties of 90 keV Co + -ion implanted CdS thin films grown by thermal evaporation. Co + -ion implantation was performed in the fluence range of 0.1-3.6x10 16 ions cm -2 These fluences correspond to Co concentration in the range of 0.34-10.8 at % at the peak position of profile. Implantation was done at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of Co ions in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, and micro-Raman spectroscopy. Implantation does not lead to any secondary phase formation either in the form of impurity or the metallic clusters. However, implantation improves the crystalline quality of the samples and leads to supersaturation of Co ions in the CdS lattice. Thus, nanocrystalline CdS thin films can be considered as a good radiation- resistant material, which can be employed for prolonged use in solar cells for space applications. The optical band gap is found to decrease systematically with increasing ion fluence from 2.39 to 2.28 eV. Implantation leads to agglomeration of grains and a systematic increase in the surface roughness. Both GAXRD and micro

Size dependence of the optical spectrum in nanocrystalline silver

International Nuclear Information System (INIS)

Taneja, Praveen; Ayyub, Pushan; Chandra, Ramesh

2002-01-01

We report a detailed study of the optical reflectance in sputter-deposited, nanocrystalline silver thin films in order to understand the marked changes in color that occur with decreasing particle size. In particular, samples with an average particle size in the 20 to 35 nm range are golden yellow, while those with a size smaller than 15 nm are black. We simulate the size dependence of the observed reflection spectra by incorporating Mie's theory of scattering and absorption of light in small particles, into the bulk dielectric constant formalism given by Ehrenreich and Philipp [Phys. Rev. 128, 1622 (1962)]. This provides a general method for understanding the reflected color of a dense collection of nanoparticles, such as in a nanocrystalline thin film. A deviation from Mie's theory is observed due to strong interparticle interactions

Photoluminescence study of ZnS and ZnS:Pb nanoparticles

International Nuclear Information System (INIS)

Virpal,; Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

2015-01-01

Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states

A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

Energy Technology Data Exchange (ETDEWEB)

Firoozifar, S.A.R. [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Behjat, A., E-mail: abehjat@yazduni.ac.ir [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Photonics Research Group, Engineering Research Center, Yazd University, Yazd (Iran, Islamic Republic of); Kadivar, E. [Physics Department, Persian Gulf University, Bushehr (Iran, Islamic Republic of); Ghorashi, S.M.B.; Zarandi, M. Borhani [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of)

2011-11-01

To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 deg. C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

Science.gov (United States)

Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

2013-01-01

Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Energy Technology Data Exchange (ETDEWEB)

Halindintwali, Sylvain; Knoesen, D.; Julies, B.A.; Arendse, C.J.; Muller, T. [University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Gengler, Regis Y.N.; Rudolf, P.; Loosdrecht, P.H.M. van [Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen (Netherlands)

2011-09-15

Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH{sub 4}/CH{sub 4}/H{sub 2} mixture at a substrate temperature below 400 C. Thermal annealing in an argon environment up to 900 C shows that the films crystallize as {mu}c-Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X-rays photoelectron spectroscopy we show that the films evolve from the amorphous SiH{sub x}/SiCH{sub 2} structure to nanocrystalline Si and SiC upon annealing at a temperature of 900 C. A strong RT photoluminescence peak of similar shape has been observed at around 420 nm in both as-deposited and annealed samples. Time-resolved luminescence measurements reveal that this peak is fast decaying with lifetimes ranging from 0.5 to {proportional_to}1.1 ns. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural evolution and optical properties of oxidized ZnS microrods

Energy Technology Data Exchange (ETDEWEB)

Trung, D.Q. [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Quang Ninh University of Industry, Yen Tho-Dong Trieu District, Quang Ninh Province (Viet Nam); Thang, P.T.; Hung, N.D. [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Huy, P.T., E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam)

2016-08-15

In this study, we present a simple and versatile way to growth and modify photoemission of high quality ZnS microrods by thermal evaporation method in combination with post oxidation in oxygen environment. The as-grown ZnS microrods show strong near edge luminescence doublets at room temperature indicating the high crystalline quality. Using ultrahigh-resolution scanning electron microscope integrated with energy microanalysis and cathodoluminescence capacity we elucidate the effect of oxidation temperature on microstructure surface, chemical composition and emission spectra of ZnS microrods. Under appropriate oxidation condition, the initial high quality ZnS microrods can be converted into ZnS/ZnO microrod heterostructures or optically active porous ZnO microrods. More particularly, we demonstrate that the emission wavelength of an oxygen-related defect could be tuned in between optical band-gap of ZnS and ZnO upon increasing the oxidation temperature. This research introduces a simple approach to synthesize and tune optical property of high quality ZnS crystals. - Highlights: • High quality optically defect free ZnS microrods were synthesized in large scale. • The structural evolution and changes in optical emission upon oxidation were disclosed. • Luminescence of oxygen-related defect can be tuned using oxidation temperature. • The initial ZnS microrods can be converted into ZnS/ZnO heterostructure. • Porous ZnO microrods with negligible defect emissions were achieved.

Pulsed laser deposition from ZnS and Cu₂SnS₃ multicomponent targets

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Canulescu, Stela

2015-01-01

Thin films of ZnS and Cu2SnS3have been produced by pulsed laser deposition (PLD), the latter for the firsttime. The effect of fluence and deposition temperature on the structure and the transmission spectrumas well as the deposition rate has been investigated, as has the stoichiometry of the films...

Substitutional Boron in Nanodiamond, Bucky-Diamond, and Nanocrystalline Diamond Grain Boundaries

Energy Technology Data Exchange (ETDEWEB)

Barnard, Amanda S.; Sternberg, Michael G.

2006-10-05

Although boron has been known for many years to be a successful dopant in bulk diamond, efficient doping of nanocrystalline diamond with boron is still being developed. In general, the location, configuration, and bonding structure of boron in nanodiamond is still unknown, including the fundamental question of whether it is located within grains or grain boundaries of thin films and whether it is within the core or at the surface of nanoparticles. Presented here are density functional tight-binding simulations examining the configuration, potential energy surface, and electronic charge of substitutional boron in various types of nanocrystalline diamond. The results predict that boron is likely to be positioned at the surface of isolated particles and at the grain boundary of thin-film samples.

Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

International Nuclear Information System (INIS)

Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

2011-01-01

Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

The pure rotational spectrum of ZnS (X 1Σ +)

Science.gov (United States)

Zack, L. N.; Ziurys, L. M.

2009-10-01

The pure rotational spectrum of ZnS (X 1Σ +) has been measured using direct-absorption millimeter/sub-millimeter techniques in the frequency range 372-471 GHz. This study is the first spectroscopic investigation of this molecule. Spectra originating in four zinc isotopologues ( 64ZnS, 66ZnS, 68ZnS, and 67ZnS) were recorded in natural abundance in the ground vibrational state, and data from the v = 1 state were also measured for the two most abundant zinc species. Spectroscopic constants have been subsequently determined, and equilibrium parameters have been estimated. The equilibrium bond length was calculated to be re ˜ 2.0464 Å, which agrees well with theoretical predictions. In contrast, the dissociation energy of DE ˜ 3.12 eV calculated for ZnS, assuming a Morse potential, was significantly higher than past experimental and theoretical estimates, suggesting diabatic interaction with other potentials that lower the effective dissociation energy. Although ZnS is isovalent with ZnO, there appear to be subtle differences in bonding between the two species, as suggested by their respective force constants and bond length trends in the 3d series.

Nanocrystalline Aluminum Truss Cores for Lightweight Sandwich Structures

Science.gov (United States)

Schaedler, Tobias A.; Chan, Lisa J.; Clough, Eric C.; Stilke, Morgan A.; Hundley, Jacob M.; Masur, Lawrence J.

2017-12-01

Substitution of conventional honeycomb composite sandwich structures with lighter alternatives has the potential to reduce the mass of future vehicles. Here we demonstrate nanocrystalline aluminum-manganese truss cores that achieve 2-4 times higher strength than aluminum alloy 5056 honeycombs of the same density. The scalable fabrication approach starts with additive manufacturing of polymer templates, followed by electrodeposition of nanocrystalline Al-Mn alloy, removal of the polymer, and facesheet integration. This facilitates curved and net-shaped sandwich structures, as well as co-curing of the facesheets, which eliminates the need for extra adhesive. The nanocrystalline Al-Mn alloy thin-film material exhibits high strength and ductility and can be converted into a three-dimensional hollow truss structure with this approach. Ultra-lightweight sandwich structures are of interest for a range of applications in aerospace, such as fairings, wings, and flaps, as well as for the automotive and sports industries.

Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

Energy Technology Data Exchange (ETDEWEB)

Shi, Zhiwei; Walker, Amy V., E-mail: amy.walker@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, RL10, 800 W. Campbell Rd., Richardson, Texas 75080 (United States)

2015-09-15

The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

International Nuclear Information System (INIS)

Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

2013-01-01

Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

International Nuclear Information System (INIS)

Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

2011-01-01

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Engineering of giant magnetoimpedance effect of amorphous and nanocrystalline microwires

Directory of Open Access Journals (Sweden)

V. Zhukova

2016-12-01

Full Text Available We present our studies of the factors affecting soft magnetic properties and giant magnetoimpedance effect in thin amorphous and nanocrystalline microwires. We showed that the magnetoelastic anisotropy is one of the most important parameters that determine magnetic softness and GMI effect of glass-coated microwires  and annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Considerable magnetic softening and increasing of the GMI effect is observed in Fe-rich nanocrystalline FINEMET-type glass-coated microwires after the nanocrystallization.

Transformation from amorphous to nano-crystalline SiC thin films ...

Indian Academy of Sciences (India)

Administrator

phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

Morphology-controlled synthesis of ZnS nanostructures via single-source approaches

International Nuclear Information System (INIS)

Han, Qiaofeng; Qiang, Fei; Wang, Meijuan; Zhu, Junwu; Lu, Lude; Wang, Xin

2010-01-01

ZnS nanoparticles of various morphologies, including hollow or solid spherical, and polyhedral shape, were synthesized from single-source precursor Zn(S 2 COC 2 H 5 ) 2 without using a surfactant or template. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy. The results indicate that ZnS hollow and solid spheres assembled by nanoparticles can be easily generated by the solution phase thermalysis of Zn(S 2 COC 2 H 5 ) 2 at 80 o C using N, N-dimethylformamide (DMF) and ethylene glycol (EG) or water as solvents, respectively, whereas solvothermal process of the same precursor led to ZnS nanoparticles of polyhedral shape with an average size of 120 nm. The optical properties of these ZnS nanostructures were investigated by room-temperature luminescence and UV-vis diffuse reflectance spectra.

High yield growth of uniform ZnS nanospheres with strong photoluminescence properties

International Nuclear Information System (INIS)

Li, Yuan; Li, Qing; Wu, Huijie; Zhang, Jin; Lin, Hua; Nie, Ming; Zhang, Yu

2013-01-01

Graphical abstract: High-yield ZnS nanospheres with an average diameter of 80 nm were fabricated successfully in aqueous solution at 100 °C by the assistance of surfactant PVP. It was found that PVP plays a crucial role in the formation of uniform ZnS nanospheres. A possible self-assembling growth mechanism was proposed. The UV–vis spectrum indicates that the as-prepared ZnS nanospheres exhibit a dramatic blue-shift. PL spectrum reveals that the ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. Highlights: ► High-yield ZnS nanospheres were generated conveniently in aqueous solution. ► The amount of surfactant PVP plays a crucial role on the morphology and size of the products. ► A tentative explanation for the growth mechanism of ZnS nanospheres was proposed. ► The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. ► PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. - Abstract: High yield ZnS nanospheres were generated conveniently in aqueous solution with the assistance of surfactant polyvinyl pyrrolidone (PVP). The products were characterized by XRD, EDX, XPS, FESEM, TEM and HRTEM. The as-prepared ZnS nanospheres were uniform with an average diameter of 80 nm. The role of PVP in the forming of ZnS nanospheres was investigated. The results indicated that surfactant PVP plays a crucial role on the morphology and size of the products. Moreover, a tentative explanation for the growth mechanism of ZnS nanospheres was proposed. UV–vis and PL absorption spectrum were used to investigate the optical properties of ZnS nanospheres. The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm.

Plasmonic scattering back reflector for light trapping in flat nano-crystalline silicon solar cells

NARCIS (Netherlands)

van Dijk, L.; van de Groep, J.; Veldhuizen, L.W.; Di Vece, M.; Polman, A.; Schropp, R.E.I.

2016-01-01

Most types of thin film solar cells require light management to achieve sufficient light absorptance. We demonstrate a novel process for fabricating a scattering back reflector for flat, thin film hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. This scattering back reflector consists of

Structural and optical properties of nanocrystalline CdSe and Al:CdSe thin films for photoelectrochemical application

Energy Technology Data Exchange (ETDEWEB)

Gawali, Sanjay A. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India); Bhosale, C.H., E-mail: bhosale_ch@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India)

2011-10-03

Highlights: {yields} The CdSe and Al:CdSe thin films have been successfully deposited by SPT. {yields} Hexagonal cubic structured CdSe and Al: CdSe thin films are observed. {yields} Large number of fine grains, Uniform and compact growth morphology. {yields} Hydrophilic surface nature. {yields} Al:CdSe have better PEC performance than CdSe. - Abstract: Nanocrystalline CdSe and Al:CdSe semiconductor thin films have been successfully synthesized onto amorphous and FTO glass substrates by spray pyrolysis technique. Aqueous solutions containing precursors of Cd and Se have been used to obtain good quality films. The optimized films have been characterized for their structural, morphological, wettability and optical properties. X-ray diffraction (XRD) studies show that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy (SEM) studies show that the film surface is smooth, uniform and compact in nature. Water wettability study reveals that the films are hydrophilic behavior. The formation of CdSe and Al:CdSe thin film were confirmed with the help of FTIR spectroscopy. UV-vis spectrophotometric measurement showed a direct allowed band gap lying in the range 1.673-1.87 eV. Output characteristics were studied by using cell configuration n- CdSe/Al:CdSe |1 M (NaOH + Na{sub 2} + S)|C. An efficient solar cell having a power conversion efficiency of 0.38% at illumination 25 mW cm{sup -2} was fabricated.

Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

2007-01-01

We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

Nanocrystalline CsPbBr3 thin films: a grain boundary opto-electronic study

Science.gov (United States)

Conte, G.; Somma, F.; Nikl, M.

2005-01-01

CsPbBr3 thin films with nanocrystalline morphology were studied by using optoelectronic techniques to infer the grain boundary region in respect of the crystallite's interior performance. Co-evaporation of puri-fied powders or crushed Bridgman single crystals were used to deposit materials and compare recombina-tion mechanism and dielectric relaxation processes within them. Nanosecond photoconduction decay was observed on both materials as well as activated hopping transport. An asymmetric Debye-like peak was evaluated from impedance spectroscopy with a FWHM value, which remains constant for 1.25 +/- 0.02 deca-des, addressing the presence of a tight conductivity relaxation times distribution. The evaluated activation energy, equal to 0.72 +/- 0.05 eV, similar to that estimated by DC measurements, is well smaller then that expected for an intrinsic material with exciton absorption at 2.36 eV. A simple model based on Voigt's elements was used to model the electronic characteristics of these nanostructured materials, to discuss observed results and define the role played by grain boundaries.

Microstructured extremely thin absorber solar cells

DEFF Research Database (Denmark)

Biancardo, Matteo; Krebs, Frederik C

2007-01-01

In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed by press......In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed...

Effect of different sol concentrations on the properties of nanocrystalline ZnO thin films grown on FTO substrates by sol-gel spin-coating

International Nuclear Information System (INIS)

Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Kim, Dongwan; Park, Minju; Kim, Haeun; Lee, Wookbin; Leem, Jaeyoung; Kim, Jongsu; Kim, Jin Soo

2014-01-01

Nanocrystalline ZnO thin films grown on fluorine-doped tinoxide (FTO) substrates were fabricated using the spin-coating method. The structural and the optical properties of the ZnO thin films prepared using different sol concentrations were investigated by using field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), photoluminescence (PL) measurements, and ultraviolet-visible (UV-vis) spectrometry. The surface morphology of the ZnO thin films, as observed in the SEM images, exhibited a mountain-chain structure. XRD results indicated that the thin films were preferentially orientated along the direction of the c-axis and that the grain size of the ZnO thin films increased with increasing sol concentration. The PL spectra showed a strong ultraviolet emission peak at 3.22 eV and a broad orange emission peak at 2.0 eV. The intensities of deep-level emission (DLE) gradually increased with increasing sol concentration from 0.4 to 1.0 M. The transmittance spectra of the ZnO thin films showed that the ZnO thin films were transparent (∼85%) in the visible region and exhibited sharp absorption edges at 375 nm. Thus, The Urbach energy of ZnO thin films decreased with increasing sol concentration.

Influence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin films.

Science.gov (United States)

Kumar, Manjeet; Kumar, Akshay; Abhyankar, A C

2015-02-18

For the first time, a new facile approach based on simple and inexpensive chemical spray pyrolysis (CSP) technique is used to deposit Tungsten (W) doped nanocrystalline SnO2 thin films. The textural, optical, structural and sensing properties are investigated by GAXRD, UV spectroscopy, FESEM, AFM, and home-built sensing setup. The gas sensing results indicate that, as compared to pure SnO2, 1 wt % W-doping improves sensitivity along with better response (roughness values of 3.82 eV and 3.01 nm, respectively. Reduction in texture coefficient along highly dense (110) planes with concomitant increase along loosely packed (200) planes is found to have prominent effect on gas sensing properties of W-doped films.

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

International Nuclear Information System (INIS)

Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

2008-01-01

Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

International Nuclear Information System (INIS)

Briones Cruz, Almira; Shen Qing; Toyoda, Taro

2006-01-01

Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devices

International Nuclear Information System (INIS)

Farag, A.A.M.; Osiris, W.G.; Ammar, A.H.

2012-01-01

Graphical abstract: Scanning electron microscopy (SEM) image of NPC films: (a) cross section view, (b) surface morphology of the film at 300 K, (c) surface morphology of the annealed film at 350 K, (d) surface morphology of the annealed film at 400 K, (e) surface morphology of the annealed film at 450 K, and (f) surface morphology of the annealed film at 500 K. Highlights: ► The absorption edge shifts to the lower energy for the annealed NPC film. ► The device of Au/NPC/ITO exhibit rectifying characteristics. ► The devices show improvement in photovoltaic parameters. ► The power conversion efficiency of the devices show enhancement under annealing. - Abstract: In this work, nanocrystalline thin films of 2,3-naphthalocyanine (NPC) were successfully deposited by a thermal evaporation technique at room temperature under high vacuum (∼10 −4 Pa). The crystal structure and surface morphology were measured using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. A preferred orientation along the (0 0 1) direction was observed in all the studied films and the average crystallite size was calculated. Scanning electron miscroscopy (SEM) images of NPC films at different thermal treatment indicated significant changes on surface level patterns and gave clear evidence of agglomeration of nanocrystalline structures. The molecular structural properties of the thin films were characterized using Fourier transform infrared spectroscopy (FTIR), which revealed the stability of the chemical bonds of the compound under thermal treatment. The dark electrical conductivity of the films at various heat treatment stages showed that NPC films have a better conductivity than that of its earlier reported naphthalocyanine films and the activation energy was found to decrease with annealing temperature. The absorption edge shifted to the lower energy as a consequence of the thermal annealing of the film and the fundamental absorption edges correspond to a

Effect of Cr doping on structural and magnetic properties of ZnS nanoparticles

International Nuclear Information System (INIS)

Virpal,; Singh, Jasvir; Sharma, Sandeep; Singh, Ravi Chand

2016-01-01

The structural, optical and magnetic properties of pure and Cr doped ZnS nanoparticles were studied at room temperature. X-ray diffraction analysis confirmed the absence of any mixed phase and the cubic structure of ZnS in pure and Cr doped ZnS nanoparticles. Fourier transfer infrared spectra confirmed the Zn-S stretching bond at 664 cm"−"1 of ZnS in all prepared nanoparticles. The UV-Visible absorption spectra showed blue shift which became even more pronounced in Cr doped ZnS nanoparticles. However, at relatively higher Cr concentrations a slower red shift was shown by the doped nanoparticles. This phenomenon is attributed to sp-d exchange interaction that becomes prevalent at higher doping concentrations. Further, magnetic hysteresis measurements showed that Cr doped ZnS nanoparticles exhibited ferromagnetic behavior at room temperature.

Effects of magnetic flux densities on microstructure evolution and magnetic properties of molecular-beam-vapor-deposited nanocrystalline Fe_3_0Ni_7_0 thin films

International Nuclear Information System (INIS)

Cao, Yongze; Wang, Qiang; Li, Guojian; Ma, Yonghui; Du, Jiaojiao; He, Jicheng

2015-01-01

Nanocrystalline Fe_3_0Ni_7_0 (in atomic %) thin films were prepared by molecular-beam-vapor deposition in magnetic fields with different magnetic flux densities. The microstructure evolution of these thin films was studied by atomic force microscopy, transmission electron microscopy, and high resolution transmission electron microscopy; the soft magnetic properties were examined by vibrating sample magnetometer at room temperature. The results show that all our Fe_3_0Ni_7_0 thin films feature an fcc single-phase structure. With increasing magnetic flux density, surface roughness, average particle size and grain size of the thin films decreased, and the short-range ordered clusters (embryos) of thin films increased. Additionally, the magnetic anisotropy in the in-plane and the coercive forces of the thin films gradually reduced with increasing magnetic flux density. - Highlights: • With increasing magnetic flux density, average particle size of films decreased. • With increasing magnetic flux density, surface roughness of thin films decreased. • With increasing magnetic flux density, short-range ordered clusters increased. • With increasing magnetic flux density, the coercive forces of thin films reduced. • With increasing magnetic flux density, soft magnetic properties are improved.

Design and investigation of properties of nanocrystalline diamond optical planar waveguides.

Science.gov (United States)

Prajzler, Vaclav; Varga, Marian; Nekvindova, Pavla; Remes, Zdenek; Kromka, Alexander

2013-04-08

Diamond thin films have remarkable properties comparable with natural diamond. Because of these properties it is a very promising material for many various applications (sensors, heat sink, optical mirrors, chemical and radiation wear, cold cathodes, tissue engineering, etc.) In this paper we report about design, deposition and measurement of properties of optical planar waveguides fabricated from nanocrystalline diamond thin films. The nanocrystalline diamond planar waveguide was deposited by microwave plasma enhanced chemical vapor deposition and the structure of the deposited film was studied by scanning electron microscopy and Raman spectroscopy. The design of the presented planar waveguides was realized on the bases of modified dispersion equation and was schemed for 632.8 nm, 964 nm, 1 310 nm and 1 550 nm wavelengths. Waveguiding properties were examined by prism coupling technique and it was found that the diamond based planar optical element guided one fundamental mode for all measured wavelengths. Values of the refractive indices of our NCD thin film measured at various wavelengths were almost the same as those of natural diamond.

Characteristics of RuO2-SnO2 nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

International Nuclear Information System (INIS)

Kim, Han-Ki; Choi, Sun-Hee; Yoon, Young Soo; Chang, Sung-Yong; Ok, Young-Woo; Seong, Tae-Yeon

2005-01-01

The characteristics of RuO 2 -SnO 2 nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O 2 /Ar ambient have RuO 2 -SnO 2 nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film in 0.5 M H 2 SO 4 liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm 2 μm. This suggests that the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

Energy Technology Data Exchange (ETDEWEB)

Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

2015-05-01

Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

Photoluminescence of ZnS: Mn quantum dot by hydrothermal method

Directory of Open Access Journals (Sweden)

Yun Hu

2018-01-01

Full Text Available ZnS: Mn quantum dots (QDs with the average grain size from 4.2 to 7.2 nm were synthesized by a hydrothermal method. All samples were cubic zinc blende structure (β-ZnS measured using X-ray diffraction (XRD. And the main diffraction peaks of ZnS: Mn shifted slightly towards higher angle in comparison with the intrinsic ZnS because of the substitution of Mn2+ for Zn2+. Due to the small grain size (4-7 nm effect, the poor dispersion and serious reunion phenomenon for the samples were observed from transmission electron microscopy (TEM. ZnS: Mn QDs had four peaks centered at 466, 495, 522, and 554 nm, respectively, in the photoluminescence (PL spectra, in which the band at 554 nm absent in the intrinsic ZnS: Mn is attributed to the doping of Mn2+ in the lattice sites. As the concentration of Mn2+ increasing from 0% to 0.6 at%, the intensity of the PL emission also increased. But the concentration reached 0.9 at%, quenching of PL emission occurred. The peak in ZnS: Mn QDs observed at 490 cm-1 was originated from the stretching vibration of the Mn–O bonds in the Fourier transform infrared (FTIR spectra. And the small changes about this peak compared with the previous reports at 500 cm-1 can be attributed to the formation of quantum dots. This method we utilized to synthesize ZnS: Mn QDs is very simple, low cost, and applicable for other semiconductor QD materials.

Preparation of sensitized ZnS and its photocatalytic activity under visible light irradiation

International Nuclear Information System (INIS)

Zhang Haitao; Chen Xinyi; Li Zhaosheng; Kou Jiahui; Yu Tao; Zou Zhigang

2007-01-01

In this paper, sensitized ZnS with visible light driven photocatlytic ability was successfully prepared. The obtained ZnS was characterized by x-ray diffraction, UV-visible diffuse reflectance spectra and Fourier transform infrared spectra. The photocatalytic property of the prepared ZnS was evaluated by decomposing methyl orange (MO). These sensitized ZnS powders with a proper molar ratio showed higher photocatalytic activity than TiO 2 (P25) under visible light (λ > 420 nm) irradiation. A possible explanation for the visible light activity of the prepared ZnS was proposed

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)

2016-08-01

Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.

Microstructure characterization of nanocrystalline TiC synthesized by mechanical alloying

International Nuclear Information System (INIS)

Ghosh, B.; Pradhan, S.K.

2010-01-01

Nanocrystalline TiC is produced by mechanical milling the stoichiometric mixture of α-Ti and graphite powders at room temperature under argon atmosphere within 35 min of milling through a self-propagating combustion reaction. Microstructure characterization of the unmilled and ball-milled samples was done by both X-ray diffraction and electron microscopy. It reveals the fact that initially graphite layers were oriented along and in the course of milling, thin graphite layers were distributed evenly among the grain boundaries of α-Ti particles. Both α-Ti and TiC lattices contain stacking faults of different kinds. The grain size distribution obtained from the Rietveld's method and electron microscopy studies ensure that nanocrystalline TiC particles with almost uniform size (∼13 nm) can be prepared by mechanical alloying technique. The result obtained from X-ray analysis corroborates well with the microstructure characterization of nanocrystalline TiC by electron microscopy.

Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

Science.gov (United States)

Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-07-01

The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

International Nuclear Information System (INIS)

Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

2008-01-01

The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

Structural and Optical Properties of Nanocrystalline 3,4,9,10-Perylene-Tetracarboxylic-Diimide Thin Film

Directory of Open Access Journals (Sweden)

M. M. El-Nahhas

2012-01-01

Full Text Available Thin films of nanocrystalline 3,4,9,10-perylene-tetracarboxylic-diimide (PTCDI were prepared on quartz substrates by thermal evaporation technique. The structural properties were identified by transmission electron microscopy (TEM and the X-ray diffraction (XRD. The optical properties for the films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 200 to 2500 nm. The optical constants (refractive index n and absorption index k were calculated and found to be independent on the film thickness in the measured film thickness range 117–163 nm. The dispersion energy (Ed, the oscillator energy (Eo, and the high-frequency dielectric constant ε∞ were obtained. The energy band model was applied, and the types of the optical transitions responsible for optical absorption were found to be indirect allowed transition. The onset and optical energy gaps were calculated, and the obtained results were also discussed.

Substrate dependent hierarchical structures of RF sputtered ZnS films

Science.gov (United States)

Chalana, S. R.; Mahadevan Pillai, V. P.

2018-05-01

RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

Sensitive and selective detection of adenine using fluorescent ZnS nanoparticles

International Nuclear Information System (INIS)

Meerabai Devi, L; Negi, Devendra P S

2011-01-01

We have used fluorescent ZnS nanoparticles as a probe for the determination of adenine. A typical 2 x 10 -7 M concentration of adenine quenches 39.3% of the ZnS fluorescence. The decrease in ZnS fluorescence as a function of adenine concentration was found to be linear in the concentration range 5 x 10 -9 -2 x 10 -7 M. The limit of detection (LOD) of adenine by this method is 3 nM. Among the DNA bases, only adenine quenched the fluorescence of ZnS nanoparticles in the submicromolar concentration range, thus adding selectivity to the method. The amino group of adenine was important in determining the quenching efficiency. Steady-state fluorescence experiments suggest that one molecule of adenine is sufficient to quench the emission arising from a cluster of ZnS consisting of about 20 molecules. Time-resolved fluorescence measurements indicate that the adenine molecules block the sites on the surface of ZnS responsible for emission with the longest lifetime component. This method may be applied for the determination of adenine in biological samples since the measurements have been carried out at pH 7.

Ion-implantation of erbium into the nanocrystalline diamond thin films

Czech Academy of Sciences Publication Activity Database

Nekvindová, P.; Babchenko, Oleg; Cajzl, J.; Kromka, Alexander; Macková, Anna; Malinský, Petr; Oswald, Jiří; Prajzler, Václav; Remeš, Zdeněk; Varga, Marián

2016-01-01

Roč. 18, 7-8 (2016), s. 679-684 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : nanocrystalline diamond * optical waveguides * erbium * luminescence * ion implantation * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.449, year: 2016

Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

Science.gov (United States)

Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

2015-06-01

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

Energy Technology Data Exchange (ETDEWEB)

Martin, C. [Ramapo College of New Jersey, Mahwah, NJ 07430 (United States); Miller, K.H. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi, 782-8502 (Japan); Craciun, D. [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/ SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292, Chatenay Malabry (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

2017-05-15

Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Enhancement of efficiency by embedding ZnS and Mn-doped ZnS nanoparticles in P3HT:PCBM hybrid solid state solar cells

Science.gov (United States)

Jabeen, Uzma; Adhikari, Tham; Shah, Syed Mujtaba; Nunzi, Jean-Michel; Badshah, Amin; Ahmad, Iqbal

2017-06-01

Zinc sulphide (ZnS) and Mn-doped ZnS nanoparticles were synthesized by wet chemical method. The synthesized nanoparticles were characterized by UV-visible, fluorescence, X-ray diffraction (XRD), fourier transform infra-red (FTIR) spectrometer, field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM). Scanning electron microscope (SEM) was used to find particle size while chemical composition of the synthesized materials was investigated by EDAX. UV-visible absorption spectrum of Mn-doped ZnS was slightly shifted to lower wavelength with respect to the un-doped zinc sulphide with decrease in the size of nanoparticles. Consequently, the band gap was tuned from 3.04 to 3.13 eV. The photoluminescence (PL) emission positioned at 597 nm was ascribed to 4T1 → 6A1 transition within the 3d shell of Mn2+. X-ray diffraction (XRD) analysis revealed that the synthesized nanomaterials existed in cubic crystalline state. The effect of embedding un-doped and doped ZnS nanoparticles in the active layer and changing the ratio of PCBM ([6, 6]-phenyl-C61-butyric acid methyl ester) to nanoparticles on the performance of hybrid solar cell was studied. The device with active layer consisting of poly(3-hexylthiophene) (P3HT), [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM), and un-doped ZnS nanoparticles combined in the ratio of (1:0.5:0.5) attained an efficiency of 2.42% which was found 71% higher than the reference device under the same conditions but not containing nanoparticles. Replacing ZnS nanoparticles with Mn-doped ZnS had a little effect on the enhancement of efficiency. The packing behavior and morphology of blend of nanoparticles with P3HT:PCBM were examined using atomic force microscope (AFM) and XRD. Contribution to the topical issue "Materials for Energy harvesting, conversion and storage II (ICOME 2016)", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

Silver film on nanocrystalline TiO{sub 2} support: Photocatalytic and antimicrobial ability

Energy Technology Data Exchange (ETDEWEB)

Vukoje, Ivana D., E-mail: ivanav@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Tomašević-Ilić, Tijana D., E-mail: tommashev@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Zarubica, Aleksandra R., E-mail: zarubica2000@yahoo.com [Department of Chemistry, Faculty of Science and Mathematics, University of Niš, Višegradska 33, 18000 Niš (Serbia); Dimitrijević, Suzana, E-mail: suzana@tmf.bg.ac.rs [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Budimir, Milica D., E-mail: mickbudimir@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Vranješ, Mila R., E-mail: mila@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Šaponjić, Zoran V., E-mail: saponjic@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Nedeljković, Jovan M., E-mail: jovned@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia)

2014-12-15

Highlights: • Simple photocatalytic rout for deposition of Ag on nanocrystalline TiO{sub 2} films. • High antibactericidal efficiency of deposited Ag on TiO{sub 2} support. • Improved photocatalytic performance of TiO{sub 2} films in the presence of deposited Ag. - Abstract: Nanocrystalline TiO{sub 2} films were prepared on glass slides by the dip coating technique using colloidal solutions consisting of 4.5 nm particles as a precursor. Photoirradiation of nanocrystalline TiO{sub 2} film modified with alanine that covalently binds to the surface of TiO{sub 2} and at the same time chelate silver ions induced formation of metallic silver film. Optical and morphological properties of thin silver films on nanocrystalline TiO{sub 2} support were studied by absorption spectroscopy and atomic force microscopy. Improvement of photocatalytic performance of nanocrystalline TiO{sub 2} films after deposition of silver was observed in degradation reaction of crystal violet. Antimicrobial ability of deposited silver films on nanocrystalline TiO{sub 2} support was tested in dark as a function of time against Escherichia coli, Staphylococcus aureus, and Candida albicans. The silver films ensured maximum cells reduction of both bacteria, while the fungi reduction reached satisfactory 98.45% after 24 h of contact.

Pressure-induced transition-temperature reduction in ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Yang Cuizhuo; Liu Yanguo; Sun Hongyu; Guo Defeng; Li Xiaohong; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Liu Baoting [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

2008-03-05

The study of the structural transition in nanoscale materials is of particular interest for their potential applications. In the present study, we have observed a lower temperature T = 250 deg. C for the phase transition from the sphalerite structure to the wurtzite structure in ZnS nanoparticles under a pressure of 1 GPa, as compared to those, T = 400 and 1020 deg. C, for ZnS nanoparticles and bulk ZnS under normal pressure, respectively. The reduced transition temperature is attributed to the applied pressure leading to tight particle-particle contacts, which change the surface (or interfacial) environment of the nanoparticles and thus their surface (or interfacial) energy.

Pressure-induced transition-temperature reduction in ZnS nanoparticles

International Nuclear Information System (INIS)

Yang Cuizhuo; Liu Yanguo; Sun Hongyu; Guo Defeng; Li Xiaohong; Li Wei; Zhang Xiangyi; Liu Baoting

2008-01-01

The study of the structural transition in nanoscale materials is of particular interest for their potential applications. In the present study, we have observed a lower temperature T = 250 deg. C for the phase transition from the sphalerite structure to the wurtzite structure in ZnS nanoparticles under a pressure of 1 GPa, as compared to those, T = 400 and 1020 deg. C, for ZnS nanoparticles and bulk ZnS under normal pressure, respectively. The reduced transition temperature is attributed to the applied pressure leading to tight particle-particle contacts, which change the surface (or interfacial) environment of the nanoparticles and thus their surface (or interfacial) energy

A first-principles study on hydrogen in ZnS: Structure, stability and diffusion

Energy Technology Data Exchange (ETDEWEB)

Sun, Yu [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Xie, Sheng-Yi, E-mail: ayikongjian@gmail.com [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Meng, Xing, E-mail: mengxingjlu@163.com [College of Physics, Jilin University, Changchun 130012 (China)

2015-02-20

Based on first-principles calculations, the local structures and their energetic stability for impurity hydrogen (H) in semiconductor ZnS are investigated. H is most favorable to dwell in the bond center (BC) site in ZnS. The antibonding site of Zn (AB{sub Zn}) has close energy with BC. The antibonding site of S (AB{sub S}) and interstitial (I{sub H}) site have 0.19 eV and 0.44 eV energy cost, separately. The bond strength with S and Zn determines the stability of impurity H in ZnS. Meanwhile, H is highly moveable in ZnS. At the room temperature, H can overcome the barrier to diffuse through the neighboring BC site. - Highlights: • Local structures for hydrogen in ZnS are investigated. • Impurity level of hydrogen is modulated by bonding with S or Zn. • Hydrogen is highly moveable in ZnS.

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

Science.gov (United States)

Wang, Cai-feng; Hu, Bo; Yi, Hou-hui; Li, Wei-bing

2011-11-01

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.

Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

Science.gov (United States)

Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

2012-06-01

Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

Photoluminescent properties of ZnS nanoparticles prepared by electro-explosion of Zn wires

International Nuclear Information System (INIS)

Goswami, Navendu; Sen, P.

2007-01-01

We study the photoluminescent properties of ZnS nanoparticles without the influence of dopants or magnetic impurities. The ZnS nanoparticles reported in this case were synthesized by a novel method of electro-explosion of wire (EEW). The nanoparticles were prepared employing electro-explosion of pure zinc wires in a cell filled with sulfide ions to produce a free-standing compound ZnS semiconductor. To investigate the structural and optical properties, these nanoparticles were characterized by X-ray powder diffraction (XRD), atomic force microscopy (AFM), UV-visible and photoluminescence (PL) spectroscopy. Consistent with the enhancement of the PL intensity of the 443 nm peak due to deep blue emission of ZnS particles, the XRD of the nanoparticles reveals a hexagonal phase of ZnS nanocrystallites prepared by our novel synthesis technique

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

Science.gov (United States)

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

doped ZnS nanoparticles

Indian Academy of Sciences (India)

Mn2+-doped ZnS nanoparticles were prepared by chemical arrested precipitation method. The samples were heated at 300, 500, 700 and 900°C. The average particle size was determined from the X-ray line broadening. Samples were characterized by XRD, FTIR and UV. The composition was verified by EDAX spectrum.

White light photoluminescence from ZnS films on porous Si substrates

International Nuclear Information System (INIS)

Wang Caifeng; Li Weibing; Li Qingshan; Hu Bo

2010-01-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated. (semiconductor materials)

Effect of structure, size and copper doping on the luminescence properties of ZnS

Energy Technology Data Exchange (ETDEWEB)

Kamal, Ch. Satya [Crystal Growth and Nanoscience Research Centre, Government College (A), Rajahmundry, Andhra Pradesh 533 105 (India); Mishra, R.K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Patel, Dinesh K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Casali Center for Applied Chemistry, The Hebrew University of Jerusalem, 9190401 (Israel); Rao, K. Ramachandra, E-mail: drkrcr@gmail.com [Crystal Growth and Nanoscience Research Centre, Government College (A), Rajahmundry, Andhra Pradesh 533 105 (India); Sudarsan, V., E-mail: vsudar@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Vatsa, R.K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2016-09-15

Highlights: • Blue and green emission intensity form ZnS is sensitive to crystallographic form. • For ZnS nanoparticles, emission characteristics are not affected by copper doping. • Cu solubility poor in ZnS nanoparticles compared to corresponding bulk. - Abstract: Luminescence properties of wurtzite and cubic forms of bulk ZnS have been investigated in detail and compared with that of ZnS nanoparticles. Blue emission observed in both hexagonal and cubic forms of undoped bulk ZnS is explained based on electron–hole recombination involving electron in conduction band and hole trapped in Zn{sup 2+} vacancies where as green emission arises due to electron hole recombination from Zn{sup 2+} and S{sup 2−} vacancies. Conversion of wurtzite form to cubic form is associated with relative increase in intensity of green emission due to increased defect concentration brought about by high temperature heat treatment. Copper doping in ZnS, initially leads to formation of both Cu{sub Zn} and Cu{sub i} (interstitial copper) centers, and latter to mainly Cu{sub Zn} centers as revealed by variation in relative intensities of blue and green emission from the samples.

Nanocrystalline ceramic materials

Science.gov (United States)

Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

1994-01-01

A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

Thermoluminescent properties of ZnS:Mn nanocrystalline powders

International Nuclear Information System (INIS)

Ortiz-Hernández, Arturo Agustín; Méndez García, Víctor Hugo; Pérez Arrieta, María Leticia; Ortega Sígala, José Juan

2015-01-01

Thermoluminescent ZnS nanocrystals doped with Mn 2+ ions were synthesized by chemical co-precipitation method. From X-ray diffraction studies it was observed that the synthesized nanoparticles have cubic zinc blende structure with average sizes of about 40–50 nm. Morphology was analyzed by TEM. Photoluminescence studies showed two transitions, one of them close to 396 nm and other close to 598 nm, which is enhanced with increasing dopant concentration, this behavior was also observed in the cathodoluminescence spectrum. The thermoluminescence gamma dose-response has linear behavior over dose range 5–100 mGy, the glow curve structure shows two glow peaks at 436 K and at 518 K that were taken into account to calculate the kinetic parameters using the Computerized Glow Curve Deconvolution procedure. - Highlights: • Nanocrystals in powder of ZnS:Mn were synthesized using the co-precipitation method. • The integrated TL spectra has a linear behavior on the dose range 5–100 mGy of γ-radiation. • The kinetic parameters were obtained by the CGCD procedure. • Results support the possible use of nanocrystalline ZnS:Mn as a new γ-dose nanoTLD

Effect of Various Catalysts on the Stability of Characteristics of Acetone Sensors Based on Thin Nanocrystalline SnO2 Films

Science.gov (United States)

Sevastyanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Khludkova, L. S.; Chernikov, E. V.; Davydova, T. A.

2018-02-01

The results of studies of electrical and gas sensitive characteristics of acetone sensors based on thin nanocrystalline SnO2 films with various catalysts deposited on the surface (Pt/Pd, Au) and introduced into the volume (Au, Ni, Co) are presented. Films containing impurities of gold and 3d-metals were obtained by the method of magnetron sputtering of mosaic targets. Particular attention was paid to the influence of the longterm tests and humidity level on the properties of sensors. It is shown that the sensors with the deposited dispersed gold layers with Au+Ni and, especially, Au+Co additives introduced into the volume are characterized by the increased stability in the process of testing under prolonged exposure to acetone and also under conditions of varying humidity.

Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

Science.gov (United States)

Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

2016-05-01

The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

Composition and properties of nanocrystalline Zn S thin films prepared by a new chemical bath deposition route

International Nuclear Information System (INIS)

Sahraei, R.; Goudarzi, A.; Ahmadpoor, H.; Motedayen Aval, Gh.

2006-01-01

Zinc sulfide nanocrystalline thin films were prepared by a new chemical bath deposition route on soda lime glass and quartz substrates using a weak acidic bath, in which disodium salt of ethylenediaminetetraacetic acid (EDTA) acts as a complexing agent and thioacetamide acts as a source of sulfide ions. The thickness of the films varied from a few nm to 500 nm. The chemical composition of films was studied by energy-dispersive X-ray analyzer and Fourier transform infrared spectroscopy. The films are very close to Zinc sulfide stoichiometry and we did not observed any organic compounds in the impurity form in them. X-ray diffraction indicates that the film and powder formed in the same reaction bath have cubic zinc blende structure. The films have high transmittance of about 75% in the visible region. The optical band-gap energy (E g ) was determined to be 3.75 eV from the absorption spectrophotometry measurements.

Quasi-particle energies and optical excitations of ZnS monolayer honeycomb structure

Energy Technology Data Exchange (ETDEWEB)

Shahrokhi, Masoud, E-mail: shahrokhimasoud37@gmail.com

2016-12-30

Highlights: • The electronic and optical properties of ZnS honeycomb sheet are investigated. • The electronic properties were analyzed at three levels of GW approach. • The optical properties of these materials are investigated using the BSE approach. • Optical properties of ZnS sheet strongly dominated by excitonic effects. • Spectrum is dominated by strongly bound Frenkel excitons. - Abstract: Using ab-initio density functional theory calculations combined with many-body perturbation formalism we carried out the electronic structure and optical properties of 2D graphene-like ZnS structure. The electronic properties were analyzed at three levels of many-body GW approach (G{sub 0}W{sub 0}, GW{sub 0} and GW) constructed over a Generalized Gradient Approximation functional. Our results indicate that ZnS sheet has a direct band gap at the Γ-point. Also it is seen that inclusion of electron–electron interaction does not change the sort of direct semiconducting band gap in ZnS sheet. The optical properties and excitonic effects of these materials are investigated using the Bethe-Salpeter equation (BSE) approach. The formation of first exciton peaks at 3.86, 4.26, and 4.57 eV with large binding energy of 0.36, 0.49 and 0.73 eV using G{sub 0}W{sub 0} + BSE, GW{sub 0} + BSE and GW + BSE, respectively, was observed. We show that the optical absorption spectrum of 2D ZnS structure is dominated by strongly bound Frenkel excitons. The enhanced excitonic effects in the ZnS monolayer sheet can be useful in designing optoelectronic applications.

Synthesis and Characteristics of ZnS Nanospheres for Heterojunction Photovoltaic Device

Science.gov (United States)

Chou, Sheng-Hung; Hsiao, Yu-Jen; Fang, Te-Hua; Chou, Po-Hsun

2015-06-01

The synthesis of ZnS nanospheres produced using the microwave hydrothermal method was studied. The microstructure and surface and optical properties of ZnS nanospheres on glass were characterized using scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, and ultraviolet-visible spectroscopy. The influence of deposition time on the transmission and photovoltaic performance was determined. The power conversion efficiency of an Al-doped ZnO/ZnS nanosphere/textured p-Si device improved from 0.93 to 1.77% when the thickness of the ZnS nanostructured film was changed from 75 to 150 nm.

Interaction of ZnS nanoparticles with flavins and glucose oxidase: A fluorimetric investigation

International Nuclear Information System (INIS)

Chatterjee, Anindita; Priyam, Amiya; Ghosh, Debasmita; Mondal, Somrita; Bhattacharya, Subhash C.; Saha, Abhijit

2012-01-01

Interactions of luminescence, water soluble ZnS nanoparticles (NPs) with flavins and glucose oxidase have been thoroughly investigated through optical spectroscopy. The photoluminescence of ZnS nanoparticles was quenched severely (∼60%) by riboflavin while other flavins such as flavin mononucleotide (FMN) and flavin adenine dinucleotide (FAD) show quenching to different extents under analogous conditions. However, interestingly no effect in luminescence intensity of ZnS NPs was observed with protein bound flavins such as in glucose oxidase. Fluorescence lifetime measurement confirmed the quenching to be static in nature. Scavenging of photo-generated electron of ZnS nanoparticles by the flavin molecules may be attributed to the decrease in luminescence intensity. Quenching of ZnS nanoparticles with flavins follows the linear Stern–Volmer plot. The Stern–Volmer constants decreased in the following order: K S−V (Riboflavin)> K S−V (FAD)> K S−V (FMN). This interaction study could generate useful protocol for the fluorimetric determination of riboflavin (vitamin B 2 ) content and also riboflavin status in biological systems. - Highlights: ► Unique interaction specificity of ZnS nanoparticles with flavins has been explored. ► Unlike protein-bound flavin, fluorescence of free flavins was quenched by ZnS nanoparticles. ► FMN and FAD show quenching to different extents under analogous conditions. ► Fluorescence lifetime measurement confirmed the quenching to be static in nature. ► This study is useful for probing riboflavin in biological systems.

Characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki [Core Technology Laboratory, Samsung SDI, 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do 442-391 (Korea, Republic of)]. E-mail: hanki1031.kim@samsung.com; Choi, Sun-Hee [Nano Materials Research Center, Korea Institute of Science and Technology (KIST), PO Box 131 Choengryang, Seoul 130-650 (Korea, Republic of); Yoon, Young Soo [Department of Advanced Fusion Technology (DAFT), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701 (Korea, Republic of); Chang, Sung-Yong [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Ok, Young-Woo [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Seong, Tae-Yeon [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of)

2005-03-22

The characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O{sub 2}/Ar ambient have RuO{sub 2}-SnO{sub 2} nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film in 0.5 M H{sub 2}SO{sub 4} liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm{sup 2} {mu}m. This suggests that the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Synthesis of ZnS nanoparticles on a solid surface: Atomic force microscopy study

International Nuclear Information System (INIS)

Yuan Huizhen; Lian Wenping; Song Yonghai; Chen Shouhui; Chen Lili; Wang Li

2010-01-01

In this work, zinc sulfide (ZnS) nanoparticles had been synthesized on DNA network/mica and mica surface, respectively. The synthesis was carried out by first dropping a mixture of zinc acetate and DNA on a mica surface for the formation of the DNA networks or zinc acetate solution on a mica surface, and subsequently transferring the sample into a heated thiourea solution. The Zn 2+ adsorbed on DNA network/mica or mica surface would react with S 2- produced from thiourea and form ZnS nanoparticles on these surfaces. X-ray diffraction and atomic force microscopy (AFM) were used to characterize the ZnS nanoparticles in detail. AFM results showed that ZnS nanoparticles distributed uniformly on the mica surface and deposited preferentially on DNA networks. It was also found that the size and density of ZnS nanoparticles could be effectively controlled by adjusting reaction temperature and the concentration of Zn 2+ or DNA. The possible growth mechanisms have been discussed in detail.

Mechanochemistry of Chitosan-Coated Zinc Sulfide (ZnS) Nanocrystals for Bio-imaging Applications

Science.gov (United States)

Bujňáková, Zdenka; Dutková, Erika; Kello, Martin; Mojžiš, Ján; Baláž, Matej; Baláž, Peter; Shpotyuk, Oleh

2017-05-01

The ZnS nanocrystals were prepared in chitosan solution (0.1 wt.%) using a wet ultra-fine milling. The obtained suspension was stable and reached high value of zeta potential (+57 mV). The changes in FTIR spectrum confirmed the successful surface coating of ZnS nanoparticles by chitosan. The prepared ZnS nanocrystals possessed interesting optical properties verified in vitro. Four cancer cells were selected (CaCo-2, HCT116, HeLa, and MCF-7), and after their treatment with the nanosuspension, the distribution of ZnS in the cells was studied using a fluorescence microscope. The particles were clearly seen; they passed through the cell membrane and accumulated in cytosol. The biological activity of the cells was not influenced by nanoparticles, they did not cause cell death, and only the granularity of cells was increased as a consequence of cellular uptake. These results confirm the potential of ZnS nanocrystals using in bio-imaging applications.

Highly porous ZnS microspheres for superior photoactivity after Au and Pt deposition and thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Singla, Shilpa; Pal, Bonamali, E-mail: bpal@thapar.edu

2013-11-15

Graphical abstract: Highly porous ZnS microsphere of size 2–5 μm having large surface area ca. 173.14 m{sup 2} g{sup −1} exhibits superior photocatalytic activity for the oxidation of 4-nitrophenol under UV light irradiation. The rate of photooxidation has been significantly improved by Au and Pt deposition and after sintering, respectively, due to rapid electron acceptance by metal from photoexcited ZnS and growth of crystalline ZnS phase. - Highlights: • Photoactive ZnS microsphere of size 2–5 μm was prepared by hydrothermal route. • Highly porous cubic spherical ZnS crystals possess a large surface area, 173 m{sup 2} g{sup −1}. • 1 wt% Au and Pt photodeposition highly quenched the photoluminescence at 437 nm. • Sintering and metal loading notably improve the photooxidation rate of 4-nitrophenol. • Pt co-catalyst always exhibits superior photoactivity of ZnS microsphere than Au. - Abstract: This work highlights the enhanced photocatalytic activity of porous ZnS microspheres after Au and Pt deposition and heat treatment at 500 °C for 2 h. Microporous ZnS particles of size 2–5 μm with large surface area 173.14 m{sup 2} g{sup −1} and pore volume 0.0212 cm{sup 3} g{sup −1} were prepared by refluxing under an alkaline medium. Photoluminescence of ZnS at 437 nm attributed to sulfur or zinc vacancies were quenched to 30% and 49%, respectively, after 1 wt% Au and Pt loading. SEM images revealed that each ZnS microparticle consist of several smaller ZnS spheres of size 2.13 nm as calculated by Scherrer's equation. The rate of photooxidation of 4-nitrophenol (10 μM) under UV (125 W Hg arc–10.4 mW/cm{sup 2}) irradiation has been significantly improved by Au and Pt deposition followed by sintering due to better electron capturing capacity of deposited metals and growth of crystalline ZnS phase with less surface defects.

Photoluminescence study of Mn doped ZnS nanoparticles prepared by co-precipitation method

Energy Technology Data Exchange (ETDEWEB)

Deshpande, M. P., E-mail: vishwadeshpande@yahoo.co.in; Patel, Kamakshi, E-mail: kamphysics@gmail.com; Gujarati, Vivek P.; Chaki, S. H. [Department of Physics, Sardar Patel University, VallabhVidyanagr-388120,Anand, Gujarat, India. (India)

2016-05-06

ZnS nanoparticles co-doped with different concentration (5,10,15%) of Mn were synthesized using polyvinylpyrrolidone (PVP) as a capping agent under microwave irradiation. We confirmed doping of Mn in the host ZnS by EDAX whereas powder X-ray diffractogram showed the cubic zinc blende structure of all these samples. TEM images did showed agglomeration of particles and SAED pattern obtained indicated polycrystalline nature. From SAED pattern we calculated lattice parameter of the samples which have close resemblance from that obtained from XRD pattern. The band gap values of pure and doped ZnS nanoparticles were calculated from UV-Visible absorption spectra. ZnS itself is a luminescence material but when we dope it with transition metal ion such as Mn, Co, and Cu they exhibits strong and intense luminescence in the particular region. The photoluminescence spectra of pure ZnS nanoparticles showed an emission at 421 and 485nm which is blue emission which was originated from the defect sites of ZnS itself and also sulfur deficiency and when doped with Mn{sup 2+} an extra peak with high intensity was observed at 530nm which is nearly yellow-orange emission which isrelated to the presence of Mn in the host lattice.

Structural, magnetic and optical properties of ZnO nanostructures converted from ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Patel, Prayas Chandra; Ghosh, Surajit; Srivastava, P.C., E-mail: pcsrivastava50@gmail.com

2016-09-15

Graphical abstract: The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. - Highlights: • Phase change of cubic ZnS to hexagonal ZnO via heat treatment. • Band gap was found to decrease with increasing calcinations temperature. • ZnO samples have higher magnetic moment than ZnS. • Blocking Temperature of the samples is well above room temperature. • Maximum negative%MR with saturation value ∼38% was found for sample calcined at 600° C. - Abstract: The present work concentrates on the synthesis of cubic ZnS and hexagonal ZnO semiconducting nanoparticle from same precursor via co-precipitation method. The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. From the analysis of influence of calcination temperature on the structural, optical and vibrational properties of the samples, an optimum temperature was found for the total conversion of ZnS nanoparticles to ZnO. Role of quantum confinement due to finite size is evident from the blue shift of the fundamental absorption in UV–vis spectra only in the ZnS nanoparticles. The semiconducting nature of the prepared samples is confirmed from the UV–vis, PL study and transport study. From the magnetic and transport studies, pure ZnO phase was found to be more prone to magnetic field.

Interaction of ZnS nanoparticles with flavins and glucose oxidase: A fluorimetric investigation

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Anindita; Priyam, Amiya; Ghosh, Debasmita; Mondal, Somrita [UGC-DAE Consortium for Scientific Research, Kolkata Centre, III/LB-8, Bidhannagar, Kolkata 700098 (India); Bhattacharya, Subhash C. [Department of Chemistry, Jadavpur University, Kolkata 700032 (India); Saha, Abhijit, E-mail: abhijit@alpha.iuc.res.in [UGC-DAE Consortium for Scientific Research, Kolkata Centre, III/LB-8, Bidhannagar, Kolkata 700098 (India)

2012-03-15

Interactions of luminescence, water soluble ZnS nanoparticles (NPs) with flavins and glucose oxidase have been thoroughly investigated through optical spectroscopy. The photoluminescence of ZnS nanoparticles was quenched severely ({approx}60%) by riboflavin while other flavins such as flavin mononucleotide (FMN) and flavin adenine dinucleotide (FAD) show quenching to different extents under analogous conditions. However, interestingly no effect in luminescence intensity of ZnS NPs was observed with protein bound flavins such as in glucose oxidase. Fluorescence lifetime measurement confirmed the quenching to be static in nature. Scavenging of photo-generated electron of ZnS nanoparticles by the flavin molecules may be attributed to the decrease in luminescence intensity. Quenching of ZnS nanoparticles with flavins follows the linear Stern-Volmer plot. The Stern-Volmer constants decreased in the following order: K{sub S-V} (Riboflavin)> K{sub S-V} (FAD)> K{sub S-V} (FMN). This interaction study could generate useful protocol for the fluorimetric determination of riboflavin (vitamin B{sub 2}) content and also riboflavin status in biological systems. - Highlights: Black-Right-Pointing-Pointer Unique interaction specificity of ZnS nanoparticles with flavins has been explored. Black-Right-Pointing-Pointer Unlike protein-bound flavin, fluorescence of free flavins was quenched by ZnS nanoparticles. Black-Right-Pointing-Pointer FMN and FAD show quenching to different extents under analogous conditions. Black-Right-Pointing-Pointer Fluorescence lifetime measurement confirmed the quenching to be static in nature. Black-Right-Pointing-Pointer This study is useful for probing riboflavin in biological systems.

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

International Nuclear Information System (INIS)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-01-01

Bi 2 S 3 /ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi 2 S 3 /ZnS composite. The results shown that Bi 2 S 3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi 2 S 3 /ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi 2 S 3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi 2 S 3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi 2 S 3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

Science.gov (United States)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-10-01

Bi2S3/ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi2S3/ZnS composite. The results shown that Bi2S3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi2S3/ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi2S3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi2S3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi2S3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process.

Gd doping induced weak ferromagnetic ordering in ZnS nanoparticles synthesized by low temperature co-precipitation technique

Energy Technology Data Exchange (ETDEWEB)

Kaur, Palvinder [Department of Physics, Punjabi University, Patiala, Punjab, 147002 (India); Kumar, Sanjeev, E-mail: sanjeev04101977@gmail.com [Applied Science Department, PEC University of Technology, Chandigarh, 160012 (India); Chen, Chi-Liang, E-mail: chen.cl@nsrrc.org.tw [National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 30076, Taiwan (China); Yang, Kai-Siang [National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 30076, Taiwan (China); Department of Mechanical Engineering, National Taipei University of Technology, Taipei, Taiwan (China); Wei, Da-Hua [Department of Mechanical Engineering, National Taipei University of Technology, Taipei, Taiwan (China); Dong, Chung-Li [Department of Physics, Tamkang University, Tamsui, Taiwan (China); Srivastava, C. [Materials Engineering Department, Indian Institute of Science, Bangalore, 560012 (India); Rao, S.M. [Department of Physics, Punjabi University, Patiala, Punjab, 147002 (India); Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan (China)

2017-01-15

Zn{sub 1−x}Gd{sub x}S nanoparticles with Gd concentration x = 0.00, 0.02 and 0.04 were synthesized by the chemical co-precipitation technique using thioglycerol as capping agent. X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, X-ray absorption near-edge structure (XANES) and vibrating sample magnetometer (VSM) were employed to characterize the as synthesized Gd doped ZnS nanoparticles. XRD and TEM studies show the formation of cubic ZnS nanoparticles with an average size in the range 5–10 nm. The doping did not alter the phase of the ZnS. The PL spectra of doped ZnS nanoparticles showed the presence of sulphur vacancies in the lattice. XANES of Gd doped ZnS nanoparticles depicts spectral changes may arise from charge transfer between host Zn and dopant Gd ions. A VSM study shows that the weak ferromagnetic behaviour increases with increase in Gd doping ZnS nanoparticles. - Highlights: • Gd doped ZnS nanoparticles synthesized using co-precipitation technique. • PL studies depict sulphur and zinc vacancies in Gd doped ZnS nanoparticles. • XANES studies depict the charge transfer between host Zn and dopant Gd ions. • Room temperature weak ferromagnetism is observed in Gd doped ZnS nanoparticles.

Gd doping induced weak ferromagnetic ordering in ZnS nanoparticles synthesized by low temperature co-precipitation technique

International Nuclear Information System (INIS)

Kaur, Palvinder; Kumar, Sanjeev; Chen, Chi-Liang; Yang, Kai-Siang; Wei, Da-Hua; Dong, Chung-Li; Srivastava, C.; Rao, S.M.

2017-01-01

Zn_1_−_xGd_xS nanoparticles with Gd concentration x = 0.00, 0.02 and 0.04 were synthesized by the chemical co-precipitation technique using thioglycerol as capping agent. X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, X-ray absorption near-edge structure (XANES) and vibrating sample magnetometer (VSM) were employed to characterize the as synthesized Gd doped ZnS nanoparticles. XRD and TEM studies show the formation of cubic ZnS nanoparticles with an average size in the range 5–10 nm. The doping did not alter the phase of the ZnS. The PL spectra of doped ZnS nanoparticles showed the presence of sulphur vacancies in the lattice. XANES of Gd doped ZnS nanoparticles depicts spectral changes may arise from charge transfer between host Zn and dopant Gd ions. A VSM study shows that the weak ferromagnetic behaviour increases with increase in Gd doping ZnS nanoparticles. - Highlights: • Gd doped ZnS nanoparticles synthesized using co-precipitation technique. • PL studies depict sulphur and zinc vacancies in Gd doped ZnS nanoparticles. • XANES studies depict the charge transfer between host Zn and dopant Gd ions. • Room temperature weak ferromagnetism is observed in Gd doped ZnS nanoparticles.

One-step synthesis of graphitic-C 3 N 4 /ZnS composites for enhanced supercapacitor performance

KAUST Repository

Wei, Binbin

2017-11-24

A series of graphitic-C3N4/ZnS (g-C3N4/ZnS) supercapacitor electrode materials have been prepared via a one-step calcination process of zinc acetate/thiourea with different mass ratios under nitrogen atmosphere. The optimized g-C3N4/ZnS composite shows a highest specific capacitance of 497.7 F/g at 1 A/g and good cycling stability with capacitance retention of 80.4% at 5 A/g after 1000 cycles. Moreover, g-C3N4/ZnS composites display an improved supercapacitor performance in terms of specific capacitance compared to the pure g-C3N4 and ZnS. In addition, our designed symmetric supercapacitor device based on g-C3N4/ZnS composite electrodes can exhibit an energy density of 10.4 Wh/kg at a power density of 187.3 W/kg. As a result, g-C3N4/ZnS composites are expected to be a prospective material for supercapacitors and other energy storage applications.

One-step synthesis of graphitic-C 3 N 4 /ZnS composites for enhanced supercapacitor performance

KAUST Repository

Wei, Binbin; Liang, Hanfeng; Wang, Rongrong; Zhang, Dongfang; Qi, Zhengbing; Wang, Zhoucheng

2017-01-01

A series of graphitic-C3N4/ZnS (g-C3N4/ZnS) supercapacitor electrode materials have been prepared via a one-step calcination process of zinc acetate/thiourea with different mass ratios under nitrogen atmosphere. The optimized g-C3N4/ZnS composite shows a highest specific capacitance of 497.7 F/g at 1 A/g and good cycling stability with capacitance retention of 80.4% at 5 A/g after 1000 cycles. Moreover, g-C3N4/ZnS composites display an improved supercapacitor performance in terms of specific capacitance compared to the pure g-C3N4 and ZnS. In addition, our designed symmetric supercapacitor device based on g-C3N4/ZnS composite electrodes can exhibit an energy density of 10.4 Wh/kg at a power density of 187.3 W/kg. As a result, g-C3N4/ZnS composites are expected to be a prospective material for supercapacitors and other energy storage applications.

Superconductive B-doped nanocrystalline diamond thin films: Electrical transport and Raman spectra

Czech Academy of Sciences Publication Activity Database

Nesládek, M.; Tromson, D.; Mer, Ch.; Bergonzo, P.; Hubík, Pavel; Mareš, Jiří J.

2006-01-01

Roč. 88, č. 23 (2006), 232111/1-232111/3 ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * superconductivity * magnetoresistance * Raman spectroscopy * Fano resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.977, year: 2006

Effect of starting pH and stabilizer/metal ion ratio on the photocatalytic activity of ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Devi, L. Meerabai; Negi, Devendra P.S., E-mail: dpsnegi@nehu.ac.in

2013-09-16

ZnS nanoparticles have been synthesized using the amino acid histidine as a stabilizing agent. The syntheses were carried out by varying the starting pH and histidine/Zn{sup 2+} ratio. The as-prepared ZnS nanoparticles were characterized by various analytical techniques. The photocatalytic activity of the ZnS nanoparticles was determined by studying the degradation of methyl orange. The ZnS nanoparticles synthesized with 1:1 histidine/Zn{sup 2+} ratio and starting pH of 10.3 were found to exhibit the highest photocatalytic activity. Nearly 95% of methyl orange was degraded in 30 min of irradiation using the photocatalyst. Particle size was not the main factor in determining the photocatalytic activity of the ZnS nanoparticles. Fluorescence lifetime measurements indicated that photocatalytic activity of the ZnS nanoparticles was enhanced with increase in their fluorescence lifetime. - Graphical abstract: Display Omitted - Highlights: • Photocatalytic activity of ZnS nanoparticles dependent on synthesis parameters. • About 95% of methyl orange degraded in 30 min of irradiation using optimal ZnS nanoparticles. • Particle size is not the main factor in determining the photocatalytic activity of ZnS. • Photocatalytic activity of ZnS was enhanced with increase in fluorescence lifetime.

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Science.gov (United States)

Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

2016-04-01

Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

Synthesis and characterization of Ce, Cu co-doped ZnS nanoparticles

International Nuclear Information System (INIS)

Harish, G.S.; Sreedhara Reddy, P.

2015-01-01

Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using a chemical co-precipitation method. The prepared nanoparticles were characterized by X- ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) and high resolution Raman spectroscopic techniques. Transmission electron microscopy (TEM) and X-ray diffraction studies showed that the diameter of the particles was around 2–3 nm. Broadened XRD peaks revealed the formation of nanoparticles with a face centered cubic (fcc) structure. DRS studies confirmed that the band gap increased with an increase in the dopant concentration. The Raman spectra of undoped and Ce, Cu ions co-doped ZnS nanoparticles showed longitudinal optical mode and transverse optical mode. Compared with the Raman modes (276 and 351 cm −1 ) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co- doped ZnS nanoparticles were slightly shifted towards lower frequency. PL spectra of the samples showed remarkable enhancement in the intensity upon doping

Nanocrystalline solids

International Nuclear Information System (INIS)

Gleiter, H.

1991-01-01

Nanocrystalline solids are polycrystals, the crystal size of which is a few (typically 1 to 10) nanometres so that 50% or more of the solid consists of incoherent interfaces between crystals of different orientations. Solids consisting primarily of internal interfaces represent a separate class of atomic structures because the atomic arrangement formed in the core of an interface is known to be an arrangement of minimum energy in the potential field of the two adjacent crystal lattices with different crystallographic orientations on either side of the boundary core. These boundary conditions result in atomic structures in the interfacial cores which cannot be formed elsewhere (e.g. in glasses or perfect crystals). Nanocrystalline solids are of interest for the following four reasons: (1) Nanocrystalline solids exhibit an atomic structure which differs from that of the two known solid states: the crystalline (with long-range order) and the glassy (with short-range order). (2) The properties of nanocrystalline solids differ (in some cases by several orders of magnitude) from those of glasses and/or crystals with the same chemical composition, which suggests that they may be utilized technologically in the future. (3) Nanocrystalline solids seem to permit the alloying of conventionally immiscible components. (4) If small (1 to 10 nm diameter) solid droplets with a glassy structure are consolidated (instead of small crystals), a new type of glass, called nanoglass, is obtained. Such glasses seem to differ structurally from conventional glasses. (orig.)

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Preparation of ZnS microdisks using chemical bath deposition and ZnS/p-Si heterojunction solar cells

Science.gov (United States)

Hsiao, Y. J.; Meen, T. H.; Ji, L. W.; Tsai, J. K.; Wu, Y. S.; Huang, C. J.

2013-10-01

The synthesis and heterojunction solar cell properties of ZnS microdisks prepared by the chemical bath deposition method were investigated. The ZnS deposited on the p-Si blanket substrate exhibits good coverage. The lower reflectance spectra were found as the thickness of the ZnS film increased. The optical absorption spectra of the 80 °C ZnS microdisk exhibited a band-gap energy of 3.4 eV and the power conversion efficiency (PCE) of the AZO/ZnS/p-Si heterojunction solar cell with a 300 nm thick ZnS film was η=2.72%.

Effect of power on the growth of nanocrystalline silicon films

International Nuclear Information System (INIS)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma

2008-01-01

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm -1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity

Effect of power on the growth of nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma [Plasma Processed Materials Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: skumar@mail.nplindia.ernet.in

2008-08-20

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm{sup -1} and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

Electrochromic devices based on wide band-gap nanocrystalline semiconductors functionalized with mononuclear charge transfer compounds

DEFF Research Database (Denmark)

Biancardo, M.; Argazzi, R.; Bignozzi, C.A.

2006-01-01

A series of ruthenium and iron mononuclear complexes were prepared and their spectroeletrochemical behavior characterized oil Optically Transparent Thin Layer Electrodes (OTTLE) and on Fluorine Doped SnO2 (FTO) conductive glasses coated with Sb-doped nanocrystalline SnO2. These systems display a ...

Preparation and characterization of ZnTe thin films by SILAR method

International Nuclear Information System (INIS)

Kale, S.S.; Mane, R.S.; Pathan, H.M.; Shaikh, A.V.; Joo, Oh-Shim; Han, Sung-Hwan

2007-01-01

Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47

Influence of Structural Defects on Biomineralized ZnS Nanoparticle Dissolution: An In-Situ Electron Microscopy Study

Energy Technology Data Exchange (ETDEWEB)

Eskelsen, Jeremy R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Environmental Sciences Division; Xu, Jie [Univ. of Texas, El Paso, TX (United States). Geological Sciences; Chiu, Michelle Y. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Environmental Sciences Division; Moon, Ji-Won [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Biosciences Division; Wilkins, Branford O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Environmental Sciences Division; Graham, David E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Biosciences Division; Gu, Baohua [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Environmental Sciences Division; Pierce, Eric M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Environmental Sciences Division

2017-12-19

The dissolution of metal sulfides, such as ZnS, plays an important role in the fate of metal contaminants in the environment. Here we have examined the dissolution behavior of ZnS nanoparticles synthesized via several abiotic and biological pathways. Specifically, the biogenic ZnS nanoparticles were produced by an anaerobic, metal-reducing bacterium Thermoanaerobacter sp. X513 in a Zn-amended, thiosulfate-containing growth medium, whereas the abiogenic ZnS nanoparticles were produced by mixing an aqueous Zn solution with either H₂S-rich gas or Na₂S solution. For biogenic synthesis, we prepared two types of samples, in the presence or absence of trace silver (Ag). The size distribution, crystal structure, aggregation behavior, and internal defects of the synthesized ZnS nanoparticles were primarily examined using high-resolution transmission electron microscopy coupled with X-ray energy dispersive spectroscopy. The characterization results show that both the biogenic and abiogenic samples were dominantly composed of sphalerite. In the absence of Ag, the biogenic ZnS nanoparticles were significantly larger (i.e., ~10 nm) than the abiogenic ones (i.e., ~3–5 nm) and contained structural defects (e.g., twins and stacking faults). The presence of trace Ag showed a restraining effect on the particle size of the biogenic ZnS, resulting in quantum-dot-sized nanoparticles (i.e., ~3 nm). In situ dissolution experiments for the synthesized ZnS were conducted with a liquid-cell coupled to a transmission electron microscope (LCTEM), and the primary factors (i.e., the presence or absence structural defects) were evaluated for their effects on the dissolution behavior using the biogenic and abiogenic ZnS nanoparticle samples with the largest average particle size. Analysis of the dissolution results (i.e., change in particle radius with time) using the Kelvin equation shows that the defect-bearing biogenic ZnS nanoparticles (γ = 0.799 J/m²) have

Effects of ZnS layer on the performance improvement of the photosensitive ZnO nanowire arrays solar cells

Energy Technology Data Exchange (ETDEWEB)

Javed, Hafiz Muhammad Asif [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao, Yanping; Xing, Yonglei [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Kong, Ling Bing, E-mail: ELBKong@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

2016-08-01

The impact of ZnS layer as an interface modification on the photosensitive ZnO nanowire arrays solar cells was studied. CdS, CdSe and ZnS were deposited on ZnO nanowire arrays by SILAR method. When a ZnS layer was deposited, the quantum dot barrier was indirectly become in contact with the electrolyte, which thus restrained the flow of electrons. The CdS sensitized solar cells has an efficiency of 0.55% with the deposition of the ZnS(3) layer, that is, with a deposition of three times, whereas the CdS/CdSe co-sensitized solar cells has an efficiency of 2.03% with the deposition of the ZnS(1) layer. It was also noted that as the thickness of the of ZnS layer was increased, V{sub oc}, I{sub sc} and efficiencies of both the solar cells were first increased and then decreased. In addition, the CdS/N719 solar cells has an efficiency of 0.75% with the deposition of the ZnS(2) layer. - Highlights: • The impact of ZnS layer on the photosensitive ZnO nanowire solar cells was studied. • ZnS layer restrained the flow of electrons to the electrolyte. • CdS/CdSe co-sensitized solar cells have higher efficiency than CdS solar cells. • When ZnS layer was increased, V{sub oc} and I{sub sc} firstly increased and then decreased.

Effect of effective mass and spontaneous polarization on photocatalytic activity of wurtzite and zinc-blende ZnS

International Nuclear Information System (INIS)

Dong, Ming; Zhang, Jinfeng; Yu, Jiaguo

2015-01-01

Semiconductor zinc sulphide (ZnS) has two common phases: hexagonal wurtzite and cubic zinc-blende structures. The crystal structures, energy band structures, density of states (DOS), bond populations, and optical properties of wurtzite and zinc-blende ZnS were investigated by the density functional theory of first-principles. The similar band gaps and DOS of wurtzite and zinc-blende ZnS were found and implied the similarities in crystal structures. However, the distortion of ZnS 4 tetrahedron in wurtzite ZnS resulted in the production of spontaneous polarization and internal electric field, which was beneficial for the transfer and separation of photogenerated electrons and holes

SEMICONDUCTOR MATERIALS: White light photoluminescence from ZnS films on porous Si substrates

Science.gov (United States)

Caifeng, Wang; Qingshan, Li; Bo, Hu; Weibing, Li

2010-03-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.

Organic Dye Degradation Under Solar Irradiation by Hydrothermally Synthesized ZnS Nanospheres

Science.gov (United States)

Samanta, Dhrubajyoti; Chanu, T. Inakhunbi; Basnet, Parita; Chatterjee, Somenath

2018-02-01

The green synthesis of ZnS nanospheres using Citrus limetta (sweet lime) juice as a capping agent through a conventional hydrothermal method was studied. The particle size, morphology, chemical composition, band gap, and optical properties of the synthesized ZnS nanospheres were characterized using x-ray diffraction spectroscopy, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and ultraviolet-visible spectroscopy. The photocatalytic activity of the ZnS nanospheres was evaluated by degradation of rhodamine B (RhB) and methyl orange (MO) under solar irradiation. Upon 150 min of solar irradiation, the extent of degradation was 94% and 77% for RhB and MO, respectively.

Advantages of CaF2 over ZnS in an α-particle scintillation detector

International Nuclear Information System (INIS)

Sabol, B.; Schery, S.D.

1981-01-01

Results are reported for using a europium-activated calcium fluoride (CaF 2 ) scintillation crystal as a α-particle detector in a two-filter monitor of atmospheric radon. CaF 2 detectors are cheaper and can cover a larger surface area than the higher-resolution solid-state detectors. Compared to ZnS scintillators, the energy resolution for CaF 2 is improved from 3.0 MeV to 1.1 MeV for 4.7 MeV α-particles; however the light output from CaF 2 is considerably lower. It is concluded that a thin CaF 2 crystal is a cost-effective method of improving energy and time resolutions for the two-filter monitor. (U.K.)

Excitation spectra and forward injection electroluminescence of Er/sup 3+/ ions in ZnS

International Nuclear Information System (INIS)

Jiaqi, Y.; Tianren, Z.; Wenlian, L.

1985-01-01

Trivalent rare earth ions (RE/sup 3+/) are efficient luminescent centers for electroluminescence (EL) of thin films of II-VI compounds, which are promising display materials and attract more and more attention. The mechanism of all EL devices of RE/sup 3+/ available so far is hot electron impact excitation. Based on the analysis of excitation spectra of RE/sup 3+/ in ZnS, the authors have pointed out the possibility of a new type of EL of RE/sup 3+/ - forward injection EL, which have potential of reducing operation voltage and raising efficiency. The forward injection EL of RE/sup 3+/ has been observed and experimentally proven in ZnS:Er/sup 3+/ diode for the first time

On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

International Nuclear Information System (INIS)

Barhdadi, A.

2005-08-01

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

Science.gov (United States)

Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

2018-05-01

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

2016-11-15

II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

Strong visible-light emission of ZnS nanocrystals embedded in sol-gel silica xerogel

International Nuclear Information System (INIS)

Yang Ping; Lue, M.-K.; Song, C.-F.; Zhou, G.-J.; Ai, Z.-P.; Xu Dong; Yuan, D.-R.; Cheng, X.-F.

2003-01-01

ZnS nanoparticles embedded in novel porous phosphor silica xerogel have been synthesized by sol-gel processing. Their fluorescence properties have been evaluated and compared with those of the Na + -doped and un-doped silica xerogels. Stable and strong visible-light emission of the doped samples has been observed. The relative fluorescence intensities of the samples doped with ZnS nanoparticles (S 2- ions have been obtained by the water solution of NaS) are the highest among all of the doped samples. Its relative fluorescence intensity is about 7.5 times of that of the un-doped silica xerogel and about 300 times of that of pure ZnS nanoparticles. The emission wavelength of the ZnS-doped and Na + -doped samples is the same as that of the un-doped silica xerogel and ZnS nanoparticles (λ em =440-450 nm). This high efficiency luminescence of the doped silica xerogels has been assigned to the luminescence centers of ZnS nanoparticles and Na + in the porous phosphorescence silica xerogel

Ultra-Smooth ZnS Films Grown on Silicon via Pulsed Laser Deposition

Science.gov (United States)

Reidy, Christopher; Tate, Janet

2011-10-01

Ultra-smooth, high quality ZnS films were grown on (100) and (111) oriented Si wafers via pulsed laser deposition with a KrF excimer laser in UHV (10-9 Torr). The resultant films were examined with optical spectroscopy, electron diffraction, and electron probe microanalysis. The films have an rms roughness of ˜1.5 nm, and the film stoichiometry is approximately Zn:S :: 1:0.87. Additionally, each film exhibits an optical interference pattern which is not a function of probing location on the sample, indicating excellent film thickness uniformity. Motivation for high-quality ZnS films comes from a proposed experiment to measure carrier amplification via impact ionization at the boundary between a wide-gap and a narrow-gap semiconductor. If excited charge carriers in a sufficiently wide-gap harvester can be extracted into a narrow-gap host material, impact ionization may occur. We seek near-perfect interfaces between ZnS, with a direct gap between 3.3 and 3.7 eV, and Si, with an indirect gap of 1.1 eV.

Kinetics of oxygen adsorption on ZnS nanoparticles synthesized by precipitation process

Directory of Open Access Journals (Sweden)

Ahmadi Reza

2016-06-01

Full Text Available ZnS nanoparticles were synthesized through a one-step precipitation process. Effect of time and temperature on the formation reaction was investigated. The synthesized samples were characterized by X-ray diffraction (XRD, ultraviolet (UV visible absorption and photoluminescence (PL spectrophotometry. Based on XRD and UV-Vis data, the particles produced at 70 °C had a mean particle size of about 5 nm. Increasing time and temperature of the synthesis reaction resulted in photoluminescence intensification. PL spectroscopy helped understanding the adsorption kinetics of oxygen on ZnS nanoparticles during the precipitation synthesis process. Fabrication of ZnS structures with appropriate oxygen adsorption capacity was suggested as a means of PL emission intensity control.

Solution-processed nanocrystalline PbS on paper substrate with pencil traced electrodes as visible photodetector

Science.gov (United States)

Vankhade, Dhaval; Chaudhuri, Tapas K.

2018-04-01

Paper-based PbS photodetector sensitive in the visible spectrum is reported. Nanocrystalline PbS-on-paper devices are fabricated by a spin coating method on white paper (300 GSM) from a methanolic precursor solution. Photodetector cells of gap 0.2 cm and length 0.5 cm are prepared by drawing contacts by monolithic cretacolor 8B pencil. X-ray diffractometer confirmed the deposition of nanocrystalline PbS films with 14 nm crystallites. The SEM illustrated the uniform coating of nanocrystalline PbS thin films on cellulose fibres of papers having an average thickness of fibres are 10 µm. The linear J-V characteristics in dark and under illumination of light using graphite trace on nanocrystalline PbS-on-paper shows good ohmic contact. The resistivity of pencil trace is 30 Ω.cm. Spectral response measurements of photodetector reveal the excellent sensitivity from 400 to 700 nm with a peak at 550 nm. The best responsivity anddetectivity are 0.7 A/W and 1.4 × 1012 Jones respectively. These paper-based low-cost photodetectors devices have fast photoresponse and recovery without baseline deviation.

Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

Directory of Open Access Journals (Sweden)

H. Abdullah

2013-01-01

Full Text Available CuInSe2 (CIS thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD for crystallinity and field-emission scanning electron microscopy (FESEM for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2 films with (1 1 1, (2 2 0/(2 0 4, and (3 1 2/(1 1 6 planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

OpenAIRE

龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

2008-01-01

"Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

Latex-mediated synthesis of ZnS nanoparticles: green synthesis approach

Energy Technology Data Exchange (ETDEWEB)

Hudlikar, Manish; Joglekar, Shreeram [University of Pune, Division of Biochemistry, Department of Chemistry (India); Dhaygude, Mayur [National Chemical Laboratory, Polymer Science and Engineering Division (India); Kodam, Kisan, E-mail: kodam@chem.unipune.ac.in [University of Pune, Division of Biochemistry, Department of Chemistry (India)

2012-05-15

A low-cost, green synthesis of ZnS nanoparticles is reported using 0.3 % latex solution prepared from Jatropha curcas L. ZnS nanoparticles were characterized by X-ray diffraction, selected area electron diffraction, transmission electron microscopy, energy dispersive analysis of X-rays, UV-vis optical absorption and photoluminescence techniques. Fourier Transform Infrared Spectroscopy was performed to find the role of cyclic peptides namely curcacycline A (an octapeptide), curcacycline B (a nonapeptide) and curcain (an enzyme) as a possible reducing and stabilizing agents present in the latex of J. curcas L. The average size of ZnS nanoparticles was found to be 10 nm. Latex of J. curcas L. itself acts as a source of sulphide (S{sup -2}) ions that are donated to Zn ions under present experimental conditions. Source of sulphide (S{sup -2}) ions is still unclear, but we speculate that cysteine or thiol residues present in enzyme curcain may be donating these sulphide (S{sup -2}) ions.

Latex-mediated synthesis of ZnS nanoparticles: green synthesis approach

Science.gov (United States)

Hudlikar, Manish; Joglekar, Shreeram; Dhaygude, Mayur; Kodam, Kisan

2012-05-01

A low-cost, green synthesis of ZnS nanoparticles is reported using 0.3 % latex solution prepared from Jatropha curcas L. ZnS nanoparticles were characterized by X-ray diffraction, selected area electron diffraction, transmission electron microscopy, energy dispersive analysis of X-rays, UV-vis optical absorption and photoluminescence techniques. Fourier Transform Infrared Spectroscopy was performed to find the role of cyclic peptides namely curcacycline A (an octapeptide), curcacycline B (a nonapeptide) and curcain (an enzyme) as a possible reducing and stabilizing agents present in the latex of J. curcas L. The average size of ZnS nanoparticles was found to be 10 nm. Latex of J. curcas L. itself acts as a source of sulphide (S-2) ions that are donated to Zn ions under present experimental conditions. Source of sulphide (S-2) ions is still unclear, but we speculate that cysteine or thiol residues present in enzyme curcain may be donating these sulphide (S-2) ions.

Latex-mediated synthesis of ZnS nanoparticles: green synthesis approach

International Nuclear Information System (INIS)

Hudlikar, Manish; Joglekar, Shreeram; Dhaygude, Mayur; Kodam, Kisan

2012-01-01

A low-cost, green synthesis of ZnS nanoparticles is reported using 0.3 % latex solution prepared from Jatropha curcas L. ZnS nanoparticles were characterized by X-ray diffraction, selected area electron diffraction, transmission electron microscopy, energy dispersive analysis of X-rays, UV–vis optical absorption and photoluminescence techniques. Fourier Transform Infrared Spectroscopy was performed to find the role of cyclic peptides namely curcacycline A (an octapeptide), curcacycline B (a nonapeptide) and curcain (an enzyme) as a possible reducing and stabilizing agents present in the latex of J. curcas L. The average size of ZnS nanoparticles was found to be 10 nm. Latex of J. curcas L. itself acts as a source of sulphide (S −2 ) ions that are donated to Zn ions under present experimental conditions. Source of sulphide (S −2 ) ions is still unclear, but we speculate that cysteine or thiol residues present in enzyme curcain may be donating these sulphide (S −2 ) ions.

Design, Modeling and Optimization of a Piezoelectric Pressure Sensor based on a Thin-Film PZT Membrane Containing Nanocrystalline Powders

Directory of Open Access Journals (Sweden)

Vahid MOHAMMADI

2009-11-01

Full Text Available In this paper fabrication of a 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 thin film has been presented and then a pressure sensor based on multilayer thin-film PZT diaphragm contain of Lead Zirconate Titanate nanocrystalline powders was designed, modeled and optimized. Dynamics characteristics of this multilayer diaphragm have been investigated by ANSYS® FE software. By this simulation the effective parameters of the multilayer PZT diaphragm for improving the performance of a pressure sensor in different ranges of pressure are optimized. The optimized thickness ratio of PZT layer to SiO2 was given in the paper to obtain the maximum deflection of the multilayer thin-film PZT diaphragm. A 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 film has been developed to fabricate the pressure sensor by a hybrid sol gel process. PZT nanopowders fabricated via conventional sol gel method and uniformly dispersed in PZT precursor solution by an attrition mill. XRD analysis shows that perovskite structure would be formed due to the presence of a significant amount of ceramic nanopowders. This texture has a good effect on piezoelectric properties of perovskite structure. The film forms a strongly bonded network and less shrinkage occurs, so the films do not crack during process. Also the aspect ratio through this process would be increased. SEM micrographs indicated that PZT films were uniform, crack free and have a composite microstructure and a piezoelectric coefficient d31 of -40 pC.N-1 and d33 ranged from 50pm.N-1 to 60pm.N-1.

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

International Nuclear Information System (INIS)

Fainer, N.I.; Kosinova, M.L.; Maximovsky, E.A.; Rumyantsev, Yu.M.; Kuznetsov, F.A.; Kesler, V.G.; Kirienko, V.V.

2005-01-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO 2 and α-Si 3 N 4 . These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the α-Si 3 N 4 phase increases

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

Energy Technology Data Exchange (ETDEWEB)

Fainer, N.I. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation)]. E-mail: nadezhda@che.nsk.su; Kosinova, M.L. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Maximovsky, E.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Rumyantsev, Yu.M. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kuznetsov, F.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation); Kirienko, V.V. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation)

2005-05-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si{sub 2}NH(CH{sub 3}){sub 6} (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO{sub 2} and {alpha}-Si{sub 3}N{sub 4}. These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the {alpha}-Si{sub 3}N{sub 4} phase increases.

Application of electron crystallography to structure characterization of ZnS nanocrystals

Directory of Open Access Journals (Sweden)

Jin-Gyu Kim

2011-07-01

Full Text Available We chracterized the structure properties of two types of ZnS nanocrystals by electron crystallography. X-ray diffraction analysis for these ZnS nanocrystals was performed to determine their initial structures. Their crystallite sizes were about 5.9 nm and 8.1 nm and their crystal systems were hexagonal and cubic, respectively. Their atomic structures, however, could not be determined because of the weak diffraction intensities as well as the unexpected intensities from impurty. To overcome these problems, the structures of ZnS nanocrystals were resolved by electron crystallography using EF-EPD (energy-filtered electron powder diffraction and HRTEM (high resolution transmission electron microscopy methods. The structrues determined by Rietveld analysis are P63mc (a = 3.8452 Å, c = 18.5453 Å and F-43m (a = 5.4356 Å, respectively. Their crystallite shapes were nanorods and quasi-nanoparticles and the nanorod crystal were grown along the [001] direction. It was revealed that the phase transformation between the cubic sphalerite to the hexagonal wurtzite structure of ZnS nanocrytals was related to their shapes and growth mechanism. Electron cryststallogrpahy, employing EF-EPD and HRTEM methods together, has advantages for structure analysis and property chracterization of nano-sized materials.

Raman selection rule of surface optical phonon in ZnS nanobelts

KAUST Repository

Ho, Chih-Hsiang

2016-02-18

We report Raman scattering results of high-quality wurtzite ZnS nanobelts (NBs) grown by chemical vapor deposition. In Raman spectrum, the ensembles of ZnS NBs exhibit first order phonon modes at 274 cm-1 and 350 cm-1, corresponding to A1/E1 transverse optical and A1/E1 longitudinal optical phonons, in addition with strong surface optical (SO) phonon mode at 329 cm-1. The existence of SO band is confirmed by its shift with different surrounding dielectric media. Polarization dependent Raman spectrum was performed on a single ZnS NB and for the first time SO phonon band has been detected on a single nanobelt. Different selection rules of SO phonon modeshown from their corresponding E1/A1 phonon modeswere attributed to the anisotropic translational symmetry breaking on the NB surface.

Raman selection rule of surface optical phonon in ZnS nanobelts

KAUST Repository

Ho, Chih-Hsiang; Varadhan, Purushothaman; Wang, Hsin-Hua; Chen, Cheng-Ying; Fang, Xiaosheng; He, Jr-Hau

2016-01-01

We report Raman scattering results of high-quality wurtzite ZnS nanobelts (NBs) grown by chemical vapor deposition. In Raman spectrum, the ensembles of ZnS NBs exhibit first order phonon modes at 274 cm-1 and 350 cm-1, corresponding to A1/E1 transverse optical and A1/E1 longitudinal optical phonons, in addition with strong surface optical (SO) phonon mode at 329 cm-1. The existence of SO band is confirmed by its shift with different surrounding dielectric media. Polarization dependent Raman spectrum was performed on a single ZnS NB and for the first time SO phonon band has been detected on a single nanobelt. Different selection rules of SO phonon modeshown from their corresponding E1/A1 phonon modeswere attributed to the anisotropic translational symmetry breaking on the NB surface.

Effect of Cationic Surfactant Head Groups on Synthesis, Growth and Agglomeration Behavior of ZnS Nanoparticles

Directory of Open Access Journals (Sweden)

Mehta SK

2009-01-01

Full Text Available Abstract Colloidal nanodispersions of ZnS have been prepared using aqueous micellar solution of two cationic surfactants of trimethylammonium/pyridinium series with different head groups i.e., cetyltrimethylammonium chloride (CTAC and cetyltrimethylpyridinium chloride (CPyC. The role of these surfactants in controlling size, agglomeration behavior and photophysical properties of ZnS nanoparticles has been discussed. UV–visible spectroscopy has been carried out for determination of optical band gap and size of ZnS nanoparticles. Transmission electron microscopy and dynamic light scattering were used to measure sizes and size distribution of ZnS nanoparticles. Powder X-ray analysis (Powder XRD reveals the cubic structure of nanocrystallite in powdered sample. The photoluminescence emission band exhibits red shift for ZnS nanoparticles in CTAC compared to those in CPyC. The aggregation behavior in two surfactants has been compared using turbidity measurements after redispersing the nanoparticles in water. In situ evolution and growth of ZnS nanoparticles in two different surfactants have been compared through time-dependent absorption behavior and UV irradiation studies. Electrical conductivity measurements reveal that CPyC micelles better stabilize the nanoparticles than that of CTAC.

Charged micro-patterns on nanocrystalline diamond are well defined by electrical current application

Czech Academy of Sciences Publication Activity Database

Verveniotis, Elisseos; Kromka, Alexander; Rezek, Bohuslav

2012-01-01

Roč. 53, č. 2 (2012), s. 61-67 ISSN 0001-7140 R&D Projects: GA ČR GD202/09/H041; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * thin films * electrostatic charging * AFM * KFM Subject RIV: BM - Solid Matter Physics ; Magnetism

Temperature dependence of morphology, structural and optical properties of ZnS nanostructures synthesized by wet chemical route

International Nuclear Information System (INIS)

Navaneethan, M.; Archana, J.; Nisha, K.D.; Hayakawa, Y.; Ponnusamy, S.; Muthamizhchelvan, C.

2010-01-01

Research highlights: → ZnS nanoparticles and nanorods have been synthesized by wet chemical route. → Higher annealing temperature influenced the change in morphology due to aggregation of the nanoparticles. → The temperature dependent optical properties were investigated. → Absorption edge of nanoparticles (295 nm) and nanorods (326 nm) were shifted towards shorter wavelength compared to bulk ZnS (337 nm) due to the quantum confinement effect. → ZnS nanoparticles exhibit high photoluminescence intensity than that of ZnS nanorods annealed at 180 o C. - Abstract: ZnS nanostructures have been synthesized by simple wet chemical route and annealed at two different temperatures of 50 o C and 180 o C. From the measurements of transmission electron microscopy and contact-mode atomic force microscopy, it is found that annealed temperature changes the morphology from nanoparticles to nanorods. The optical properties of the synthesized ZnS nanomaterial have been characterized by UV-visible absorption spectroscopy and photoluminescence spectroscopy. The structural and elemental analyses were carried out by powder X-ray diffraction pattern and energy dispersive X-ray absorption spectroscopy, respectively. Absorption edge of the nanoparticles (295 nm) and nanorods (326 nm) was shifted towards shorter wavelength compared to bulk ZnS (337 nm) due to the quantum confinement effect.

A novel drug delivery of 5-fluorouracil device based on TiO{sub 2}/ZnS nanotubes

Energy Technology Data Exchange (ETDEWEB)

Mendonça Faria, Henrique Antonio, E-mail: henrique.fisica@ifsc.usp.br [Institute of Physics and Chemistry, Federal University of Itajubá (UNIFEI), Av. BPS, 1303, Pinheirinho, Itajubá, MG, PO Box 50, CEP: 37500-903 (Brazil); Nanomedicine and Nanotoxicology Laboratory, São Carlos Institute of Physics, University of São Paulo. Av. Trabalhador São-carlense, 400, Arnold Schimidt, São Carlos, SP CEP: 13566-590 (Brazil); Alencar de Queiroz, Alvaro Antonio, E-mail: alencar@unifei.edu.br [Institute of Physics and Chemistry, Federal University of Itajubá (UNIFEI), Av. BPS, 1303, Pinheirinho, Itajubá, MG, PO Box 50, CEP: 37500-903 (Brazil)

2015-11-01

The structural and electronic properties of titanium oxide nanotubes (TiO{sub 2}) have attracted considerable attention for the development of therapeutic devices and imaging probes for nanomedicine. However, the fluorescence response of TiO{sub 2} has typically been within ultraviolet spectrum. In this study, the surface modification of TiO{sub 2} nanotubes with ZnS quantum dots was found to produce a red shift in the ultra violet emission band. The TiO{sub 2} nanotubes used in this work were obtained by sol–gel template synthesis. The ZnS quantum dots were deposited onto TiO{sub 2} nanotube surface by a micelle-template inducing reaction. The structure and morphology of the resulting hybrid TiO{sub 2}/ZnS nanotubes were investigated by scanning electron microscopy, transmission electron microscopy and X-ray diffraction techniques. According to the results of fluorescence spectroscopy, pure TiO{sub 2} nanotubes exhibited a high emission at 380 nm (3.26 eV), whereas TiO{sub 2}/ZnS exhibited an emission at 410 nm (3.02 eV). The TiO{sub 2}/ZnS nanotubes demonstrated good bio-imaging ability on sycamore cultured plant cells. The biocompatibility against mammalian cells (Chinese Hamster Ovarian Cells—CHO) suggesting that TiO{sub 2}/ZnS may also have suitable optical properties for use as biological markers in diagnostic medicine. The drug release characteristic of TiO{sub 2}/ZnS nanotubes was explored using 5-fluorouracil (5-FU), an anticancer drug used in photodynamic therapy. The results show that the TiO{sub 2}/ZnS nanotubes are a promising candidate for anticancer drug delivery systems. - Highlights: • TiO{sub 2}/ZnS nanotubes showed a redshift in fluorescence spectrum. • Cytotoxicity against mammalian cells revealed biocompatibility of the nanotubes. • TiO{sub 2}/ZnS proved an efficient delivery system for anti-tumor 5-fluorouracil.

Effect of Au irradiation energy on ejection of ZnS nanoparticles from ZnS film

Science.gov (United States)

Kuiri, P. K.; Ghatak, J.; Joseph, B.; Lenka, H. P.; Sahu, G.; Mahapatra, D. P.; Tripathi, A.; Kanjilal, D.; Mishra, N. C.

2007-01-01

ZnS films deposited on Si have been irradiated with Au ions at 35 keV, 2, and 100 MeV. Sputtered particles, collected on catcher foils during irradiation, were analyzed using transmission electron microscopy. For the case of 35 keV Au irradiation, no nanoparticle (NP) could be observed on the catcher foil. However, NPs 2-7 nm in size, have been observed on the catcher foils for MeV irradiations at room temperature. For particle sizes ≥3 nm, the distributions could be fitted to power law decays with decay exponents varying between 2 and 3.5. At 2 MeV, after correction for cluster breakup effects, the decay exponent has been found to be close to 2, indicating shock waves induced ejection to be the dominant mechanism. The corrected decay exponent for the 100 MeV Au irradiation case has been found to be about 2.6. Coulomb explosion followed by thermal spike induced vaporization of ZnS seems to be the dominant mechanism regarding material removal at such high energy. In such a case the evaporated material can cool down going into the fragmentation region forming clusters.

Photoactivation and perturbation of photoluminescent properties of aqueous ZnS nanoparticles: Probing the surfactant-semiconductor interfaces

International Nuclear Information System (INIS)

Mehta, S.K.; Kumar, Sanjay

2011-01-01

Graphical abstract: The variation in PL emission intensity of growing ZnS NPs during first hour of their growth depends upon the nature of surfactants used for their stabilization. Highlights: ► Photoluminescence (PL) intensity of growing ZnS NPs increases linearly with time. ► Significant PL enhancement in anionic surfactant stabilized ZnS NPs on irradiation. ► PL decay with delay time after removing from UV-irradiation in all the surfactants. ► Better PL stability of ZnS NPs stabilized in anionic surfactants than cationic ones. - Abstract: The in situ photochemistry of aqueous colloidal ZnS has been studied in relation to variety of the surfactants as surface passivating agents. The photoluminescence (PL) intensity of ZnS nanoparticles (NPs) has been drastically enhanced as compared to their bare counterparts due to surface passivation by surfactants depending upon their molecular structure. Cationic surfactants of alkyltrimethylammonium bromide series with different chain lengths (C 16 , C 14 and C 12 ) have been tested. The PL emission of ZnS NPs decreases with decrease in chain length because of ineffective stabilization and passivation of surface because the larger sized NPs were produced in the surfactant with smaller chain length. On the other hand, three anionic surfactants with C 12 chain length with different head groups have been capable of comparatively effective passivation to produce stable NPs with better luminescence. The changing nature of surface states during growth and long time ripening of ZnS NPs has also been monitored by comparing time evolution PL emission in different surfactants. The influence of UV-light irradiation in enhancing the PL emission has been found to be surfactant structure dependent with maximum enhancement observed with the surfactants having π-electrons in their head group functionalities. The anionic surfactants also display better tendency to retain the enhanced PL of ZnS NPs for longer time durations.

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

DEFF Research Database (Denmark)

Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

2015-01-01

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

Studies on the synthesis of cubic ZnS quantum dots, capping and optical–electrical characteristics

International Nuclear Information System (INIS)

Saravanan, R. Sakthi Sudar; Pukazhselvan, D.; Mahadevan, C.K.

2012-01-01

Highlights: ► Zinc acetate and sodium sulphide as reactants. Cubic QDs of size ∼3 nm in 1:3 reactant ratios with or without capping agent. ► At least 30 times smaller size while using microwave source instead of conventional heating source. ► Widening of band gap from 3.6 eV to 3.94 eV by reducing size of ZnS. ► Better conduction with lower activation energy in wide band gap ZnS. ► Thermionic emission mechanism for conduction phenomenon. - Abstract: This paper presents a comparative analysis of ZnS QDs synthesized by conventional and microwave heating techniques using zinc acetate and sodium sulphide reactants. The size of the quantum dots achieved by the latter technique (∼3 nm) is at least 30 times smaller than the former technique. Incorporation of excess Na 2 S and microwave treatment are the important factors responsible for controlling the size of ZnS nanocrystals. Furthermore, the distribution of quantum dots is highly influenced by the addition of small amount of NaOH. The UV–vis analysis reveals that the band gap can be widened up to 3.94 eV (correspond to ∼3 nm ZnS) from 3.67 eV (correspond to bulk ZnS). Surprisingly better conductivity is observed for the widest band gap ZnS of the present study; this could be due to defects/vacancies present in the system and its influence in the band structure. The higher conductivity value is supported by the smaller activation energy value, smaller dielectric constant and higher dielectric loss, etc. The conduction is further explained by thermionic emission mechanism.

Synthesis and Structural Characterization of ZnS Quantum Dots

International Nuclear Information System (INIS)

Selim, H.; Khalil, M.M.H.; Al-Kotb, M.S.; Kotkata, M.F.; Amer, H.H.

2013-01-01

Zinc sulfide QDs have been synthesized via a simple reaction of Zn (CH 3 COO) 2 and Na 2 S in the presence of sodium dodecyl sulphate (SDS) acting as an anionic capping material. The structure as well as characterization of the synthesized materials has been studied by XRD, EDX, SEM, TEM, TGA and FT-IR spectroscopy. Analysis of the obtained results revealed products of zinc blende ZnS nanoparticles with an average size of 5.3±0.2 nm in diameter distributed spherically and uniformly. The UV-visible absorption spectrum of the synthesized ZnS nanoparticles reflects an energy gap of 4.30 eV

CdS thin films prepared by laser assisted chemical bath deposition

International Nuclear Information System (INIS)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

2015-01-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

CdS thin films prepared by laser assisted chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2015-05-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

Hydrothermal synthesis and magnetic properties of Mn doped ZnS nanoparticles

Science.gov (United States)

Rashad, M. M.; Rayan, D. A.; El-Barawy, K.

2010-01-01

Nanocrystallite Mn doped Zn1-XS (X = 0 to 0.4) powders have been synthesized through a hydrothermal route. The effect of the hydrothermal temperature and Mn2+ ions substitution on the crystal structure, crystallite size, microstructure and magnetic properties were investigated using (XRD), (SEM) and (VSM). The results revealed that wurtzite zinc sulfide phase was formed using thiourea as a sulfur source at temperature 150- 200oC for 24 h. The crystallite size was (7.9-15.1 nm) was obtained at the same conditions. The doping of Mn2+ ions decreased the crystallite size of the formed ZnS wurtzite phase was in the range between 7.9 and 3.8 nm. SEM micrographs showed that the produced ZnS and Mn doped ZnS particles were appeared as spherical shape. The magnetic properties were improved by substitution of Mn2+ ions up to 0.2.

Hydrothermal synthesis and magnetic properties of Mn doped ZnS nanoparticles

International Nuclear Information System (INIS)

Rashad, M M; Rayan, D A; El-Barawy, K

2010-01-01

Nanocrystallite Mn doped Zn 1-X S (X = 0 to 0.4) powders have been synthesized through a hydrothermal route. The effect of the hydrothermal temperature and Mn 2+ ions substitution on the crystal structure, crystallite size, microstructure and magnetic properties were investigated using (XRD), (SEM) and (VSM). The results revealed that wurtzite zinc sulfide phase was formed using thiourea as a sulfur source at temperature 150- 200 o C for 24 h. The crystallite size was (7.9-15.1 nm) was obtained at the same conditions. The doping of Mn 2+ ions decreased the crystallite size of the formed ZnS wurtzite phase was in the range between 7.9 and 3.8 nm. SEM micrographs showed that the produced ZnS and Mn doped ZnS particles were appeared as spherical shape. The magnetic properties were improved by substitution of Mn 2+ ions up to 0.2.

Role of magnesium in ZnS structure: Experimental and theoretical investigation

Directory of Open Access Journals (Sweden)

M. Y. Shahid

2016-02-01

Full Text Available Wide band gap semiconductor materials are extending significant applications in electronics and optoelectronics industry. They are showing continued advancement in ultraviolet to infrared LEDs and laser diodes. Likewise the band gap tunability of ZnS with intentional impurities such as Mg and Mn are found useful for optoelectronic devices. Information from literature indicates slight blue shift in the band gap energy of ZnS by Mg doping but nevertheless, we report a reasonable red shift (3.48 eV/356 nm to 2.58 eV/480 nm in ZnS band gap energy in Mg-ZnS structure. Theoretical model based on first principle theory using local density approximation revealed consistent results on Mg-ZnS structure. Similarly, structural, morphological, optical and electrical properties of the as grown Mg-ZnS were studied by XRD, SEM, FTIR, EDS, UV-Vis Spectrophotometer and Hall measurement techniques.

The influence of the surface topography on the magnetization dynamics in soft magnetic thin films

NARCIS (Netherlands)

Craus, CB; Palasantzas, G; Chezan, AR; De Hosson, JTM; Boerma, DO; Niesen, L

2005-01-01

In this work we study the influence of surface roughness on the magnetization dynamics of soft magnetic nanocrystalline Fe-Zr-N thin films deposited (under identical conditions) onto a Si oxide, a thin polymer layer, and a thin Cu layer. The substrate temperature during deposition was approximately

Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Czech Academy of Sciences Publication Activity Database

Krátká, Marie; Kromka, Alexander; Ukraintsev, Egor; Ledinský, Martin; Brož, A.; Kalbáčová, M.; Rezek, Bohuslav

166-167, May (2012), s. 239-245 ISSN 0925-4005 R&D Projects: GA ČR GD202/09/H041; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996; GA AV ČR KAN400100701 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * solution-gated field-effect transistors (SGFETs) * fetal bovine serum * osteoblastic cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.535, year: 2012

Effect of solvent medium on the structural, morphological and optical properties of ZnS nanoparticles synthesized by solvothermal route

Energy Technology Data Exchange (ETDEWEB)

Mendil, R., E-mail: radia.mendil@yahoo.fr [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); Ben Ayadi, Z. [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); Djessas, K. [Laboratoire Procédés, Matériaux et Energie Solaire (PROMES-CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 68860, Perpignan Cedex9 (France)

2016-09-05

Different morphologies of ZnS have been synthesized by a facile solvothermal approach in a mixed solvent made of Ethylenediamine (EN) and distilled water. The effect of solvent medium on the structural, morphological and optical properties of ZnS nanoparticles were investigated. The formation mechanism of different morphologies was proposed based on the experiment results. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectrometer (EDS), Raman spectroscopy and UV-Vis-IR spectrophotometer. The results show that phase transformation is easily induced and there is a strong correlation between morphology and structure of the ZnS nanocrystals by changing the solvent. The results also show that we have successfully produced hexagonal phase ZnS nanorods with mixed solvent. The grain sizes in the range of 17–22 nm were obtained according to elaboration conditions. Raman spectra show the intense peak at 346 cm{sup −1}, which is a typical Raman peak of bulk ZnS crystal, no signature of secondary phases. The band gap of ZnS increased from 3.49 to 3.74 eV with an increase in the EN composition in the solvent, implying that the optical properties of these materials are clearly affected by the synthesis medium. - Highlights: • ZnS was prepared at low temperature using solvothermal method. • The phase transformation and shape evolution processes were studied. • The role of solvent (EN/W) has been discussed for formation of ZnS nanostructures with different morphology. • The properties and growth mechanism of ZnS nanoparticles were investigated. • Optical band gap of ZnS powder were investigated using UV vis spectroscopy.

Adsorption of ethyl xanthate on ZnS(110) surface in the presence of water molecules: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Long, Xianhao [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Chen, Jianhua, E-mail: jhchen@gxu.edu.cn [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Guangxi Colleges and University Key Laboratory of Minerals Engineering, 530004 (China); Chen, Ye, E-mail: fby18@126.com [College of Resources and Metallurgy, Guangxi University, Nanning 530004 (China)

2016-05-01

Graphical abstract: - Highlights: • Adsorption of water molecules decreases the reactivity of surface Zn atom. • Copper impurities decrease the band gap of ZnS surface. • Copper impurities enhance the adsorption of xanthate on the ZnS surface. • Water molecules have little influence on the properties of Cu-substituted ZnS surface. • The xanthate S atom can interact with the surface S atom of Cu-substituted ZnS surface. - Abstracts: The interaction of collector with the mineral surface plays a very important role in the froth flotation of sphalerite. The adsorptions occurred at the interface between the mineral surface and waters; however most of DFT simulations are performed in vacuum, without consideration of water effect. Semiconductor surface has an obvious proximity effect, which will greatly influence the surface reactivity. To understand the mechanism of xanthate interacting with sphalerite surface in the presence of water molecules, the ethyl xanthate molecule adsorption on un-activated and Cu-activated ZnS(110) surface in the absence and presence of water molecules were performed using the density functional theory (DFT) method. The calculated results show that the adsorption of water molecules dramatically changes the properties of ZnS surface, resulting in decreasing the reactivity of surface Zn atoms with xanthate. Copper activation of ZnS surface changes the surface properties, leading to the totally different adsorption behaviors of xanthate. The presence of waters has little influence on the properties of Cu-activated ZnS surface. The xanthate S atom can interact with the surface S atom of Cu-substituted ZnS surface, which would result in the formation of dixanthogen.

Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

Science.gov (United States)

Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

2016-06-01

Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD

Czech Academy of Sciences Publication Activity Database

Zhang, G.; Janssens, S.D.; Vanacken, J.; Timmermans, M.; Vacík, Jiří; Ataklti, G.W.; Decelle, W.; Gillijns, W.; Goderis, B.; Haenen, K.; Wagner, P.; Moshchalkov, V.V.

2011-01-01

Roč. 84, č. 21 (2011), 214517/1-214517/10 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10480505 Keywords : Nanocrystalline diamond * Superconducting transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO2 structure

International Nuclear Information System (INIS)

Poghossian, A.; Abouzar, M.H.; Razavi, A.; Baecker, M.; Bijnens, N.; Williams, O.A.; Haenen, K.; Moritz, W.; Wagner, P.; Schoening, M.J.

2009-01-01

A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO 2 as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO 2 layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 μM.

Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

Energy Technology Data Exchange (ETDEWEB)

Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

2017-03-15

We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

Thermally Stable Nanocrystalline Steel

Science.gov (United States)

Hulme-Smith, Christopher Neil; Ooi, Shgh Woei; Bhadeshia, Harshad K. D. H.

2017-10-01

Two novel nanocrystalline steels were designed to withstand elevated temperatures without catastrophic microstructural changes. In the most successful alloy, a large quantity of nickel was added to stabilize austenite and allow a reduction in the carbon content. A 50 kg cast of the novel alloy was produced and used to verify the formation of nanocrystalline bainite. Synchrotron X-ray diffractometry using in situ heating showed that austenite was able to survive more than 1 hour at 773 K (500 °C) and subsequent cooling to ambient temperature. This is the first reported nanocrystalline steel with high-temperature capability.

Biomimetic nanocrystalline apatite coatings synthesized by Matrix Assisted Pulsed Laser Evaporation for medical applications

Energy Technology Data Exchange (ETDEWEB)

Visan, A. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, RO-77125, MG-36, Magurele-Ilfov (Romania); Grossin, D. [CIRIMAT – Carnot Institute, University of Toulouse, ENSIACET, 4 Allée Emile Monso, 31030 Toulouse Cedex 4 (France); Stefan, N.; Duta, L.; Miroiu, F.M. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, RO-77125, MG-36, Magurele-Ilfov (Romania); Stan, G.E. [National Institute of Materials Physics, RO-077125, Magurele-Ilfov (Romania); Sopronyi, M.; Luculescu, C. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, RO-77125, MG-36, Magurele-Ilfov (Romania); Freche, M.; Marsan, O.; Charvilat, C. [CIRIMAT – Carnot Institute, University of Toulouse, ENSIACET, 4 Allée Emile Monso, 31030 Toulouse Cedex 4 (France); Ciuca, S. [Politehnica University of Bucharest, Faculty of Materials Science and Engineering, Bucharest (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, RO-77125, MG-36, Magurele-Ilfov (Romania)

2014-02-15

Highlights: • We report the deposition by MAPLE of biomimetic apatite coatings on Ti substrates. • This is the first report of MAPLE deposition of hydrated biomimetic apatite films. • Biomimetic apatite powder was synthesized by double decomposition process. • Non-apatitic environments, of high surface reactivity, are preserved post-deposition. • We got the MAPLE complete transfer as thin film of a hydrated, delicate material. -- Abstract: We report the deposition by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique of biomimetic nanocrystalline apatite coatings on titanium substrates, with potential application in tissue engineering. The targets were prepared from metastable, nanometric, poorly crystalline apatite powders, analogous to mineral bone, synthesized through a biomimetic approach by double decomposition process. For the deposition of thin films, a KrF* excimer laser source was used (λ = 248 nm, τ{sub FWHM} ≤ 25 ns). The analyses revealed the existence, in synthesized powders, of labile non-apatitic mineral ions, associated with the formation of a hydrated layer at the surface of the nanocrystals. The thin film analyses showed that the structural and chemical nature of the nanocrystalline apatite was prevalently preserved. The perpetuation of the non-apatitic environments was also observed. The study indicated that MAPLE is a suitable technique for the congruent transfer of a delicate material, such as the biomimetic hydrated nanohydroxyapatite.

Biomimetic nanocrystalline apatite coatings synthesized by Matrix Assisted Pulsed Laser Evaporation for medical applications

International Nuclear Information System (INIS)

Visan, A.; Grossin, D.; Stefan, N.; Duta, L.; Miroiu, F.M.; Stan, G.E.; Sopronyi, M.; Luculescu, C.; Freche, M.; Marsan, O.; Charvilat, C.; Ciuca, S.; Mihailescu, I.N.

2014-01-01

Highlights: • We report the deposition by MAPLE of biomimetic apatite coatings on Ti substrates. • This is the first report of MAPLE deposition of hydrated biomimetic apatite films. • Biomimetic apatite powder was synthesized by double decomposition process. • Non-apatitic environments, of high surface reactivity, are preserved post-deposition. • We got the MAPLE complete transfer as thin film of a hydrated, delicate material. -- Abstract: We report the deposition by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique of biomimetic nanocrystalline apatite coatings on titanium substrates, with potential application in tissue engineering. The targets were prepared from metastable, nanometric, poorly crystalline apatite powders, analogous to mineral bone, synthesized through a biomimetic approach by double decomposition process. For the deposition of thin films, a KrF* excimer laser source was used (λ = 248 nm, τ FWHM ≤ 25 ns). The analyses revealed the existence, in synthesized powders, of labile non-apatitic mineral ions, associated with the formation of a hydrated layer at the surface of the nanocrystals. The thin film analyses showed that the structural and chemical nature of the nanocrystalline apatite was prevalently preserved. The perpetuation of the non-apatitic environments was also observed. The study indicated that MAPLE is a suitable technique for the congruent transfer of a delicate material, such as the biomimetic hydrated nanohydroxyapatite

The preparation and cathodoluminescence of ZnS nanowires grown by chemical vapor deposition

International Nuclear Information System (INIS)

Huang, Meng-Wen; Cheng, Yin-Wei; Pan, Ko-Ying; Chang, Chen-Chuan; Shieu, F.S.; Shih, Han C.

2012-01-01

Highlights: ► ZnS nanowires have been achieved by thermal evaporation. ► The nanowires were 20–50 nm in diameter and up to tens of nanometers in length. ► Single-crystalline wurtzite and sphalerite ZnS phase are coexist in the nanowires. ► The ZnS nanowires showed almost identical blue luminescence at room temperature. ► ZnS nanowires may be appropriate for use in UV/blue LED phosphor materials. - Abstract: Single crystal ZnS nanowires were successfully synthesized in large quantities on Si (1 0 0) substrates by simple thermal chemical vapor deposition without using any catalyst. The morphology, composition, and crystal structure were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence (CL) spectroscopy. SEM observations show that the nanowires have diameters about 20–50 nm and lengths up to several tens of micrometers. XRD and TEM results confirmed that the nanowires exhibited both wurtzite and zinc blende structures with growth directions aligned along [0 0 0 2] and [1 1 1], respectively. The CL spectrum revealed emission bands in the UV and blue regions. The blue emissions at 449 and ∼581 nm were attributed to surface states and impurity-related defects of the nanowires, respectively. The perfect crystal structure of the nanowires indicates their potential applications in nanotechnology and in the fabrication of nanodevices.

Nonlinear spectroscopy of excitons and biexcitons in ZnS

International Nuclear Information System (INIS)

Pavlov, L.I.; Paskov, P.P.; Lalov, I.J.

1989-01-01

Four- photon spectroscopy on exciton and biexciton states in ZnS is reported at T = 10 K. The Nd:YAG laser is used as a fundamental source in the experimental setup. Second harmonic radiation ω 2 pumps the dye laser of ω 1 tunable frequency. The ZnS single crystal is placed in an optical cryostat for resonant spectroscopy at low temperature. Four-photon mixing ω 3 = 2ω 1 -ω 2 signal is separated by MDR-23 monochromator and is registered by a laser photometer. The hexagonal ZnS crystal is experimentally investigated when the waves ω 1 and ω 2 propagate colinear with the optical axis. The crystal is cut along the (1120) plane. The photon 2ℎω 1 energy scans over the range 3.895-3.940 eV. The dispersion of I 3 (ω 3 ) upon 2ℎω 1 is obtained. Three resonances are registered E M = 3.8964, E B 1 = 3.9010 and E B 2 = 3.9311 eV. The recorded low temperature resonance in dispersion of nonlinearity χ (3) are identified with B 1 s and B 2 s excitons as well as with biexciton in ZnS which is observed for the first time in this crystal. An experimental dependence of the signal I 3 (ω 3 ) intensity upon the pump I 1 (ω 1 ) is obtained. The E M resonance is saturated with the I 1 (ω 1 ) enhancement while the E B 1 resonance increases. Authors explain such a behaviour by the fact that the recombination probability of the biexcitons to excitons increases with the pump level growth. Estimations for the exciton density and the bounding energy are given. (author)

Hydrothermal synthesis and magnetic properties of Mn doped ZnS nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Rashad, M M; Rayan, D A; El-Barawy, K [Central Metallurgical Research and Development Institute PO Box: 87 Helwan, Cairo (Egypt)

2010-01-01

Nanocrystallite Mn doped Zn{sub 1-X}S (X = 0 to 0.4) powders have been synthesized through a hydrothermal route. The effect of the hydrothermal temperature and Mn{sup 2+} ions substitution on the crystal structure, crystallite size, microstructure and magnetic properties were investigated using (XRD), (SEM) and (VSM). The results revealed that wurtzite zinc sulfide phase was formed using thiourea as a sulfur source at temperature 150- 200{sup o}C for 24 h. The crystallite size was (7.9-15.1 nm) was obtained at the same conditions. The doping of Mn{sup 2+} ions decreased the crystallite size of the formed ZnS wurtzite phase was in the range between 7.9 and 3.8 nm. SEM micrographs showed that the produced ZnS and Mn doped ZnS particles were appeared as spherical shape. The magnetic properties were improved by substitution of Mn{sup 2+} ions up to 0.2.

Synthesis and properties of chemical bath deposited ZnS multilayer films

International Nuclear Information System (INIS)

Kamoun Allouche, N.; Ben Nasr, T.; Turki Kamoun, N.; Guasch, C.

2010-01-01

Zinc sulphide multilayer films are prepared by chemical bath deposition from different host solutions. X-ray diffraction and scanning electron microscopy are used to characterize the structural properties of the films. The surface composition of the films is studied by Auger electrons spectroscopy, and optical properties are studied by spectrophotometric measurements. X-ray diffraction patterns reveal distinct single crystalline phase with preferential orientation along the (1 1 1) plane of the zinc blende structure for the ZnS multilayer. The spacing between (1 1 1) planes of ZnS is well matched to the spacing between (1 1 2) planes of the chalcopyrite CuInS 2 . After heat treatment all films show a near stoichiometric surface composition as indicated in their AES data. UV-vis measurements show that ZnS multilayer films prepared from the zinc sulphate solution have more than 70% transmission in the wavelengths above 350 nm and an optical band gap of about 3.76 eV.

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Logar, B.; Baumann, H.

1997-01-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

Energy Technology Data Exchange (ETDEWEB)

Brunner, S.; Puff, W.; Logar, B. [Technische Univ., Graz (Austria). Inst. fuer Kernphysik; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Biology; Balogh, A.G. [Technische Hochschule Darmstadt (Germany); Baumann, H. [Frankfurt Univ. (Germany). Inst. fuer Kernphysik

1997-10-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab.

Synthesis of in-situ luminescent ZnS nanoparticles facile with CTAB micelles and their properties study

Energy Technology Data Exchange (ETDEWEB)

Shukla, Vaishali [Centre for Nanoscience, Central University of Gujarat, Gandhinagar (India); Singh, Man [School of Chemical Sciences, Central University of Gujarat, Gandhinagar, India Telephone: 079-23260210, fax: 079-23260076 (India)

2016-04-13

Currently, the development of micelles route is thrust area of research in nanoscience for the control particle size and remarkable properties through chemical co-precipitation method. A 0.9 mM aqueous CTAB micellar solution plays a role as capping agent in the homogeneous solution of 0.5 M ZnSO{sub 4} and 0.5 M Na{sub 2}S for synthesis, further precipitates purified with centrifugation in cold ethanol and millipore water to remove unreacted reagents and ionic salt particles. A resultant, white colored luminescent ZnS nanoparticle out with ∼95% yield is reported. The ZnS nanoparticles have been examined by their luminescence properties, optical properties and crystal structure. The mean particle size of ZnS nanoparticles is found to be ∼10 nm in various technical results and UV-absorption was 80 nm blue shifts moved from 345 nm (bulk material) to 265 nm, showing a quantum size impact. The X-ray diffraction (XRD) pattern shows the immaculate cubic phase. Photoluminescence (PL) investigates the recombination mechanism with blue emission from shallow electron traps at 490 nm in ZnS nanoparticles. An FTIR spectrum and Thermal gravimetric analysis (TGA) gives confirmation of CTAB – cationic surfactant on surface of ZnS nanoparticle as capping agent as well thermal stability of CTAB capped ZnS nanoparticles with respect to temperature.

Stability of nanocrystalline electrochemically deposited layers

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2009-01-01

have different microstructure and properties compared to bulk materials and the thermodynamic non-equilibrium state of as-deposited layers frequently results in changes of the microstructure as a function of time and/or temperature. The evolving microstructure affects the functionality and reliability......The technological demand for manufacturing components with complex geometries of micrometer or sub-micrometer dimensions and ambitions for ongoing miniaturization have attracted particular attention to electrochemical deposition methods. Thin layers of electrochemically deposited metals and alloys...... of electrodeposited components, which can be beneficial, as for the electrical conductivity of copper interconnect lines, or detrimental, as for reduced strength of nickel in MEMS applications. The present work reports on in-situ studies of the microstructure stability of as-deposited nanocrystalline Cu-, Ag- and Ni...

Low temperature synthesis, photoluminescence, magnetic properties of the transition metal doped wurtzite ZnS nanowires

International Nuclear Information System (INIS)

Cao, Jian; Han, Donglai; Wang, Bingji; Fan, Lin; Fu, Hao; Wei, Maobin; Feng, Bo; Liu, Xiaoyan; Yang, Jinghai

2013-01-01

In this paper, we synthesized the transition metal ions (Mn, Cu, Fe) doped and co-doped ZnS nanowires (NWs) by a one-step hydrothermal method. The results showed that the solid solubility of the Fe 2+ ions in the ZnS NWs was about two times larger than that of the Mn 2+ or Cu 2+ ions in the ZnS NWs. There was no phase transformation from hexagonal to cubic even in a large quantity transition metal ions introduced for all the samples. The Mn 2+ /Cu 2+ /Fe 2+ related emission peaks can be observed in the Mn 2+ ,Cu 2+ and Fe 2+ doped ZnS NWs. The ferromagnetic properties of the co-doped samples were investigated at room temperature. - graphical abstract: The stable wurtzite ZnS:TM 2+ (TM=Mn, Cu, Fe) nanowires with room temperature ferromagnetism properties were obtained. The different elongation of unit cell caused by the different doped ions was observed. Highlights: ► The transition metal ions doped wurtzite ZnS nanowires were synthesized at 180 °C. ► There was no phase transformation from hexagonal to cubic even in a large quantity introduced for all the samples. ► The room temperature ferromagnetism properties of the co-doped nanowires were investigated

Tuning photoluminescence of ZnS nanoparticles by silver

Indian Academy of Sciences (India)

Wintec

Ag@ZnS core-shell nanoparticles. ... doped ZnS NPs and thus changes the emission charac- teristics. We also ... Nanoparticles; photoluminescence; silver; zinc sulfide; doping. 1. ..... Sooklal K, Brain S, Angel M and Murphy C J 1996 J. Phys.

Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO{sub 2} structure

Energy Technology Data Exchange (ETDEWEB)

Poghossian, A. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)], E-mail: a.poghossian@fz-juelich.de; Abouzar, M.H.; Razavi, A.; Baecker, M. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany); Bijnens, N. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Williams, O.A.; Haenen, K. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Division IMOMEC, IMEC vzw., Diepenbeek (Belgium); Moritz, W. [Humboldt University Berlin, Berlin (Germany); Wagner, P. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Schoening, M.J. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)

2009-10-30

A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO{sub 2} as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO{sub 2} layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 {mu}M.

Optically stimulated luminescence of ZnO obtained by thermal treatment of ZnS chemically synthesized; Luminiscencia opticamente estimulada de ZnO obtenido por tratamiento termico de ZnS sintetizado quimicamente

Energy Technology Data Exchange (ETDEWEB)

Cruz V, C.; Burruel I, S.E.; Orante B, V.R.; Grijalva M, H.; Perez S, R.; Bernal, R. [Universidad de Sonora, A.P. 130, Hermosillo (Mexico)

2005-07-01

In this work, we report the optically stimulated luminescence (OSL) dosimetry of new nano phosphors of ZnO obtained by thermal annealing of chemically synthesized ZnS powder. The synthesized ZnS nano powder was compressed in order to form pellet shaped pellets, which were afterwards subjected to a thermal annealing at 700 C during 24 h under air atmosphere. X-ray diffraction (XRD) patterns and energy-disperse X-ray Spectrometry (EDS) analyses confirmed the transformation of ZnS to ZnO. Samples were exposed to several doses of beta radiation up to 600 Gy, and the optically stimulated luminescence with 470 nm wavelength light was recorded as a function of dose. The intensity of the OSL signal increases by increasing dose, for what it is concluded that these new phosphor materials are suitable to be used in optically stimulated luminescence dosimetry. (Author)

Identification of conduction and hot electron property in ZnS, ZnO and SiO2

International Nuclear Information System (INIS)

Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong

2007-01-01

The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS

Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Baljinder [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Department of Physics, Panjab University, Chandigarh 160014 (India); Singh, Janpreet; Kaur, Jagdish [Department of Physics, Panjab University, Chandigarh 160014 (India); Moudgil, R.K. [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Panjab University, Chandigarh 160014 (India)

2016-06-01

Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

International Nuclear Information System (INIS)

Singh, Preetam; Kaur, Davinder

2010-01-01

We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

The effect of varied pH on the luminescence characteristics of antibody-mercaptoacetic acid conjugated ZnS nanowires

Science.gov (United States)

Chaudhry, Madeeha; Rehman, Malik Abdul; Gul, Asghari; Qamar, Raheel; Bhatti, Arshad Saleem

2017-11-01

We demonstrate here that the effect of varied pH of the media on the photoluminescence (PL) properties of mercaptoacetic acid (MAA) and digoxin antibody (Ab) conjugated zinc sulphide (ZnS) nanowires. The charge-transfer kinetics from MAA to ZnS and vice versa showed a profound effect on the luminescence of ZnS defect states. The PL intensity of the ZnS defect states showed strong dependence on the value of pH with respect to the pKa of MAA. The carboxyl and thiol group of MAA in the protonated (pH pKa) states resulted in the quenched PL intensity. While for pH ∼ pKa, the PL intensity was regained as there was equal probability of both protonated and deprotonated carboxyl and thiol groups. These findings indicated that pH of the environment is a key parameter for the use of MAA-Ab conjugated ZnS nanowires as an optical biomarker.

Synthesis, characterization and optical properties of polymer-based ZnS nanocomposites.

Science.gov (United States)

Tiwari, A; Khan, S A; Kher, R S; Dhoble, S J; Chandel, A L S

2016-03-01

Nanostructured polymer-semiconductor hybrid materials such as ZnS-poly(vinyl alcohol) (ZnS-PVA), ZnS-starch and ZnS-hydroxypropylmethyl cellulose (Zns-HPMC) are synthesized by a facile aqueous route. The obtained nanocomposites are characterized using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), UV/vis spectroscopy and photoluminescence (PL). XRD studies confirm the zinc blende phase of the nanocomposites and indicate the high purity of the samples. SEM studies indicate small nanoparticles clinging to the surface of a bigger particle. The Energy Dispersive Analysis by X-rays (EDAX) spectrum reveals that the elemental composition of the nanocomposites consists primarily of Zn:S. FTIR studies indicate that the polymer matrix is closely associated with ZnS nanoparticles. The large number of hydroxyl groups in the polymer matrix facilitates the complexation of metal ions. The absorption spectra of the specimens show a blue shift in the absorption edge. The spectrum reveals an absorption edge at 320, 310 and 325 nm, respectively. PL of nanocomposites shows broad peaks in the violet-blue region (420-450 nm). The emission intensity changes with the nature of capping agent. The PL intensity of ZnS-HPMC nanocomposites is found to be highest among the studied nanocomposites. The results clearly indicate that hydroxyl-functionalized HPMC is much more effective at nucleating and stabilizing colloidal ZnS nanoparticles in aqueous suspensions compared with PVA and starch. Copyright © 2015 John Wiley & Sons, Ltd.

Synthesis of photosensitive nanograined TiO2 thin films by SILAR method

International Nuclear Information System (INIS)

Patil, U.M.; Gurav, K.V.; Joo, Oh-Shim; Lokhande, C.D.

2009-01-01

Nanocrystalline TiO 2 thin films are deposited by simple successive ionic layer adsorption and reaction (SILAR) method on glass and fluorine-doped tin oxide (FTO)-coated glass substrate from aqueous solution. The as-deposited films are heat treated at 673 K for 2 h in air. The change in structural, morphological and optical properties are studied by means of X-ray diffraction (XRD), selected area electron diffraction (SAED), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), transmission electron microscopy (TEM) and UV-vis-NIR spectrophotometer. The results show that the SILAR method allows the formation of anatase, nanocrystalline, and porous TiO 2 thin films. The heat-treated film showed conversion efficiency of 0.047% in photoelectrochemical cell with 1 M NaOH electrolyte.

Synthesis and characterization of samarium-doped ZnS nanoparticles: A novel visible light responsive photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Hanifehpour, Younes, E-mail: y_hanifehpour@yu.ac.kr [School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Soltani, Behzad; Amani-Ghadim, Ali Reza; Hedayati, Behnam [Department of Chemistry, Faculty of Basic Sciences, Azarbaijan Shahid Madani University, Tabriz (Iran, Islamic Republic of); Khomami, Bamin [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Joo, Sang Woo, E-mail: swjoo1@gmail.com [School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2016-04-15

Highlights: • Sm-doped ZnS Nanomaterials were synthesized by hydrothermal method. • The as-prepared compounds were characterized by XRD, TEM, XPS, SEM and UV techniques. • The photocatalytic effect of compounds was determined by Reactive Red 43 degradation. • The degradation of RRed 43 followed the Langmuir–Hinshelwood kinetic model. - Abstract: We prepared pure and samarium-doped ZnS (Sm{sub x}Zn{sub 1−x}S{sub 1+0.5x}) nanoparticles via hydrothermal process at 160 °C for 24 h. XRD analysis shows that the particles were well crystallized and corresponds to a cubic sphalerite phase. SEM and TEM images indicate that the sizes of the particles were in the range of 20–60 nm. The photocatalytic activity of Sm-doped ZnS nanoparticles was evaluated by monitoring the decolorization of Reactive Red 43 in aqueous solution under visible light irradiation. The color removal efficiency of Sm{sub 0.04}Zn{sub 0.96}S and pure ZnS was 95.1% and 28.7% after 120 min of treatment, respectively. Among the different amounts of dopant agent used, 4% Sm-doped ZnS nanoparticles indicated the highest decolorization. We found that the presence of inorganic ions such as Cl{sup −}, CO{sub 3}{sup 2−} and other radical scavengers such as buthanol and isopropyl alcohol reduced the decolorization efficiency.

ZnS nanoparticles electrodeposited onto ITO electrode as a platform for fabrication of enzyme-based biosensors of glucose

International Nuclear Information System (INIS)

Du, Jian; Yu, Xiuping; Wu, Ying; Di, Junwei

2013-01-01

The electrochemical and photoelectrochemical biosensors based on glucose oxidase (GOD) and ZnS nanoparticles modified indium tin oxide (ITO) electrode were investigated. The ZnS nanoparticles were electrodeposited directly on the surface of ITO electrode. The enzyme was immobilized on ZnS/ITO electrode surface by sol–gel method to fabricate glucose biosensor. GOD could electrocatalyze the reduction of dissolved oxygen, which resulted in a great increase of the reduction peak current. The reduction peak current decreased linearly with the addition of glucose, which could be used for glucose detection. Moreover, ZnS nanoparticles deposited on ITO electrode surface showed good photocurrent response under illumination. A photoelectrochemical biosensor for the detection of glucose was also developed by monitoring the decreases in the cathodic peak photocurrent. The results indicated that ZnS nanoparticles deposited on ITO substrate were a good candidate material for the immobilization of enzyme in glucose biosensor construction. - Highlights: ► ZnS nanoparticles were electrodeposited directly on ITO surface. ► The direct electron transfer of GOD immobilized on ZnS surface was obtained. ► The enzyme electrode was used to the determination of glucose in the presence of oxygen. ► The response of photoelectrochemical biosensor towards glucose was more sensitive

ZnS nanoparticles electrodeposited onto ITO electrode as a platform for fabrication of enzyme-based biosensors of glucose

Energy Technology Data Exchange (ETDEWEB)

Du, Jian; Yu, Xiuping; Wu, Ying; Di, Junwei, E-mail: djw@suda.edu.cn

2013-05-01

The electrochemical and photoelectrochemical biosensors based on glucose oxidase (GOD) and ZnS nanoparticles modified indium tin oxide (ITO) electrode were investigated. The ZnS nanoparticles were electrodeposited directly on the surface of ITO electrode. The enzyme was immobilized on ZnS/ITO electrode surface by sol–gel method to fabricate glucose biosensor. GOD could electrocatalyze the reduction of dissolved oxygen, which resulted in a great increase of the reduction peak current. The reduction peak current decreased linearly with the addition of glucose, which could be used for glucose detection. Moreover, ZnS nanoparticles deposited on ITO electrode surface showed good photocurrent response under illumination. A photoelectrochemical biosensor for the detection of glucose was also developed by monitoring the decreases in the cathodic peak photocurrent. The results indicated that ZnS nanoparticles deposited on ITO substrate were a good candidate material for the immobilization of enzyme in glucose biosensor construction. - Highlights: ► ZnS nanoparticles were electrodeposited directly on ITO surface. ► The direct electron transfer of GOD immobilized on ZnS surface was obtained. ► The enzyme electrode was used to the determination of glucose in the presence of oxygen. ► The response of photoelectrochemical biosensor towards glucose was more sensitive.

Characterization of ZnS nanoparticles synthesized by co-precipitation method

International Nuclear Information System (INIS)

Iranmanesh Parvaneh; Nourzpoor Mohsen; Saeednia Samira

2015-01-01

ZnS nanoparticles are prepared by homogeneous chemical co-precipitation method using EDTA as a stabilizer and capping agent. The structural, morphological, and optical properties of as-synthesized nanoparticles are investigated using x-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, ultraviolet-visible (UV-Vis) absorption, and photoluminescence spectroscopy. The x-ray diffraction pattern exhibits a zinc-blended crystal structure at room temperature. The average particle size of the nanoparticles from the scanning electron microscopy image is about 50 nm. The ultraviolet absorption spectrum shows the blue shift in the band gap due to the quantum confinement effect. The photoluminescence spectrum of ZnS nanoparticles shows a blue visible spectrum. (paper)

Low-temperature growth and photoluminescence property of ZnS nanoribbons.

Science.gov (United States)

Zhang, Zengxing; Wang, Jianxiong; Yuan, Huajun; Gao, Yan; Liu, Dongfang; Song, Li; Xiang, Yanjuan; Zhao, Xiaowei; Liu, Lifeng; Luo, Shudong; Dou, Xinyuan; Mou, Shicheng; Zhou, Weiya; Xie, Sishen

2005-10-06

At a low temperature of 450 degrees C, ZnS nanoribbons have been synthesized on Si and KCl substrates by a simple chemical vapor deposition (CVD) method with a two-temperature-zone furnace. Zinc and sulfur powders are used as sources in the different temperature zones. X-ray diffraction (XRD), selected area electron diffraction (SEAD), and transmission electron microscopy (TEM) analysis show that the ZnS nanoribbons are the wurtzite structure, and there are two types-single-crystal and bicrystal nanoribbons. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a purple emission band centering at about 390 nm and a blue emission band centering at about 445 nm with a weak green shoulder around 510 nm.

Controlled extracellular biosynthesis of ZnS quantum dots by sulphate reduction bacteria in the presence of hydroxypropyl starch as a mediator

Science.gov (United States)

Qi, Shiyue; Zhang, Mi; Guo, Xingming; Yue, Lei; Wang, Jia; Shao, Ziqiang; Xin, Baoping

2017-06-01

Metal sulphide quantum dots (QDs) have broad applications. Sulphate-reducing bacteria (SRB) have been recognized as synthesizers of metal sulphides, with the characteristics of a high-production efficiency and easy product harvest. However, SRB are incapable of synthesizing metal sulphide QDs. In the present study, cheap hydroxypropyl starch (HPS) was used to assist SRB in manufacturing the ZnS QDs. The results exhibited that the HPS accelerated the growth of SRB and reduction of SO4 2+ into S2-, while it blocked the precipitation between S2- and Zn2+ to control the nucleation and growth of ZnS, resulting in the formation of ZnS QDs. When the HPS concentration increased from 0.2 to 1.6 g/L, the average crystal size (ACS) of ZnS QDs dropped from 5.95 to 3.34 nm, demonstrating the controlled biosynthesis of ZnS QDs. The ZnS QDs were coated or adhered to by both HPS and proteins, which played an important role in the controlled biosynthesis of ZnS QDs. The remarkable blue shift of the narrow UV absorption peak was due to the quantum confinement effect. The sequential variation in the colour of the photoluminescence spectrum (PL) from red to yellow suggested a tunable PL of the ZnS QDs. The current work demonstrated that SRB can fabricate the formation of ZnS QDs with a controlled size and tunable PL at a high-production rate of approximately 8.7 g/(L × week) through the simple mediation of HPS, with the yield being 7.46 times the highest yield in previously reported studies. The current work is of great importance to the commercialization of the biosynthesis of ZnS QDs.

Nanocrystalline diamond films for biomedical applications

DEFF Research Database (Denmark)

Pennisi, Cristian Pablo; Alcaide, Maria

2014-01-01

Nanocrystalline diamond films, which comprise the so called nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD), represent a class of biomaterials possessing outstanding mechanical, tribological, and electrical properties, which include high surface smoothness, high corrosion...... performance of nanocrystalline diamond films is reviewed from an application-specific perspective, covering topics such as enhancement of cellular adhesion, anti-fouling coatings, non-thrombogenic surfaces, micropatterning of cells and proteins, and immobilization of biomolecules for bioassays. In order...

Strength and structure of nanocrystalline titanium

International Nuclear Information System (INIS)

Noskova, N.I.; Pereturina, I.A.; Elkina, O.A.; Stolyarov, V.V.

2004-01-01

Investigation results on strength and plasticity of nanocrystalline titanium VT-1 are presented. Specific features of plastic deformation on tension of this material specimens in an electron microscope column are studied in situ. It is shown that nanocrystalline titanium strength and plasticity at room temperature are dependent on the structure and nanograin size. It is revealed that deformation processes in nanocrystalline titanium are characterized by activation of deformation rotational modes and microtwinning [ru

Prominent ethanol sensing with Cr2O3 nanoparticle-decorated ZnS nanorods sensors

Science.gov (United States)

Sun, Gun-Joo; Kheel, Hyejoon; Ko, Tae-Gyung; Lee, Chongmu; Kim, Hyoun Woo

2016-08-01

ZnS nanorods and Cr2O3 nanoparticle-decorated ZnS nanorods were synthesized by using facile hydrothermal techniques, and their ethanol sensing properties were examined. X-ray diffraction and scanning electron microscopy revealed good crystallinity and size uniformity for the ZnS nanorods. The Cr2O3 nanoparticle-decorated ZnS nanorod sensor showed a stronger response to ethanol than the pristine ZnS nanorod sensor. The responses of the pristine and the decorated nanorod sensors to 200 ppm of ethanol at 300 °C were 2.9 and 13.8, respectively. Furthermore, under these conditions, the decorated nanorod sensor showed a longer response time (23 s) and a shorter recovery time (20 s) than the pristine one did (19 and 35 s, respectively). Consequently, the total sensing time of the decorated nanorod sensor (42 s) was shorter than that of the pristine one (55 s). The decorated nanorod sensor showed excellent selectivity to ethanol over other volatile organic compound gases including acetone, methanol, benzene, and toluene whereas the pristine one failed to show selectivity to ethanol over acetone. The improved sensing performance of the decorated nanorod sensor is attributed to a modulation of the width of the conduction channel and the height of the potential barrier at the ZnS-Cr2O3 interface accompanying the adsorption and the desorption of ethanol gas, and the greater surface-to-volume ratio of the decorated nanorods which was greater than that of the pristine one due to the existence of the ZnS-Cr2O3 interface.

ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus

Energy Technology Data Exchange (ETDEWEB)

Uddandarao, Priyanka, E-mail: uddandaraopriyanka@gmail.com; B, Raj Mohan, E-mail: rajmohanbala@gmail.com

2016-05-15

Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.

An Investigation of Nanocrystalline and Electrochemically Grown Cu2ZnSnS4 Thin Film Using Redox Couples of Different Band Offset

Directory of Open Access Journals (Sweden)

Prashant K. Sarswat

2013-01-01

Full Text Available Alternative electrolytes were examined to evaluate photoelectrochemical response of Cu2ZnSnS4 films at different biasing potential. Selections of the electrolytes were made on the basis of relative Fermi level position and standard reduction potential. Our search was focused on some cost-effective electrolytes, which can produce good photocurrent during illumination. Thin films were grown on FTO substrate using ink of nanocrystalline Cu2ZnSnS4 particles as well as electrodeposition-elevated temperature sulfurization approach. Our investigations suggest that photoelectrochemical response is mostly due to conduction band-mediated process. Surface topography and phase purity were investigated after each electrochemical test, in order to evaluate film quality and reactivity of electrolytes. Raman examination of film and nanocrystals was conducted for comparison. The difference in photocurrent response was explained due to various parameters such as change in charge transfer rate constant, presence of dangling bond, difference in concentration of adsorbed species in electrode.

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

Science.gov (United States)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles

Directory of Open Access Journals (Sweden)

Ranganaik Viswanath

2014-01-01

Full Text Available Pure ZnS and ZnS:Y nanoparticles were synthesized by a chemical coprecipitation route using EDTA-ethylenediamine as a stabilizing agent. X-ray diffraction (XRD, high resolution transmission electron microscopy (HRTEM, field emission scanning electron microscopy (FE-SEM, Fourier transform infrared spectrometry (FTIR, thermogravimetric-differential scanning calorimetry (TG-DSC, and UV-visible and photoluminescence (PL spectroscopy were employed to characterize the as-synthesized ZnS and ZnS:Y nanoparticles, respectively. XRD and TEM studies show the formation of cubic ZnS:Y particles with an average size of ~4.5 nm. The doping did not alter the phase of the zinc sulphide, as a result the sample showed cubic zincblende structure. The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. The PL intensity of orange emission peak was found to be increased with an increase in yttrium ions concentration by suppressing blue emission peaks. These results strongly propose that yttrium doped zinc sulphide nanoparticles form a new class of luminescent material.

Development plan of Pu NDA system using ZnS ceramic scintillator

International Nuclear Information System (INIS)

Kureta, Masatoshi; Soyama, Kazuhiko; Seya, Michio; Ohzu, Akira; Haruyama, Mitsuo; Takase, Misao; Sakasai, Kaoru; Nakamura, Tatsuya; Toh, Kentaro

2012-01-01

Alternative techniques to neutron detection by He-3 for nuclear security and safeguards systems are necessary to be developed since He-3 shortage is serious. With support of Japanese government (the Ministry of Education, Culture, Sports, and Technology), we have started an R and D project of Pu NDA system using ZnS ceramic scintillator. Here we present development plan, production of a new type of ZnS ceramic scintillator experimentally and basic design of a PCAS alternative Pu NDA system. We are planning the demonstration tests using the alternative NDA system comparing with the current PCAS in which the He-3 counters are installed. (author)

Synthesis of ZnS films on Si(100) wafers by using chemical bath deposition assisted by the complexing agent ethylenediamine

Science.gov (United States)

Zhu, He-Jie; Wang, Xue-Mei; Gao, Xiao-Yong

2015-07-01

Low-cost synthesis of high-quality ZnS films on silicon wafers is of much importance to the ZnSbased heterojunction blue light-emitting device integrated with silicon. Thus, a series of ZnS films were chemically synthesized at low cost on Si(100) wafers at 353 K under a mixed acidic solution with a pH of 4 with zinc acetate and thioacetamide as precursors and with ethylenediamine and hydrochloric acid as the complexing agent and the pH value modifier, respectively. The effects of the ethylenediamine concentration on the crystallization, surface morphology, and optical properties of the ZnS films were investigated by using X-ray diffractometry, scanning electron microscopy, spectrophotometry, and fluorescence spectroscopy. A mechanism for the formation of ZnS film under an acidic condition was also proposed. All of the ZnS films were polycrystalline in nature, with a dominant cubic phase and a small amounts of hexagonal phases. The crystallization and the surface pattern of the films were clearly improved with increasing ethylenediamine concentration due to its enhanced complexing role. The absorption edge of the films almost underwent a blue shift with increasing ethylenediamine concentration, which was largely attributed to the quantum confinement effects caused by the small particle size of the polycrystalline ZnS films. Defect species and the corresponding strengths of the ZnS films were strongly affected by the ethylenediamine concentration.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

International Nuclear Information System (INIS)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

2016-01-01

Graphical abstract: - Highlights: • The nanocrystalline diamond (NCD) surface is functionalized with F or O. • The cell adhesion and growth are evaluated on the functionalized NCD surface. • The cell adhesion and growth depend on the wettability of the surface. • Cell patterning was achieved by using of hydrophilic and hydrophobic surfaces. • Neuroblastoma cells were arrayed on the micro-patterned NCD surface. - Abstract: Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O_2 or C_3F_8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

Energy Technology Data Exchange (ETDEWEB)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup, E-mail: kssong10@kumoh.ac.kr

2016-01-15

Graphical abstract: - Highlights: • The nanocrystalline diamond (NCD) surface is functionalized with F or O. • The cell adhesion and growth are evaluated on the functionalized NCD surface. • The cell adhesion and growth depend on the wettability of the surface. • Cell patterning was achieved by using of hydrophilic and hydrophobic surfaces. • Neuroblastoma cells were arrayed on the micro-patterned NCD surface. - Abstract: Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O{sub 2} or C{sub 3}F{sub 8} gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Ab Initio factorized LCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe)1(ZnS)1 strained-layer superlattice

International Nuclear Information System (INIS)

Marshall, T.S.; Wilson, T.M.

1992-01-01

The authors report on the results of electronic band structure calculations of bulk ZnSe, bulk ZnS and the (ZnSe) 1 (ZnS) 1 , strained-layer superlattice (SLS) using the ab initio factorized linear combination of atomic orbitals method. The bulk calculations were done using the standard primitive nonrectangular 2-atom zinc blende unit cell, while the SLS calculation was done using a primitive tetragonal 4-atom unit cell modeled from the CuAu I structure. The analytic fit to the SLS crystalline potential was determined by using the nonlinear coefficients from the bulk fits. The CPU time saved by factorizing the energy matrix integrals and using a rectangular unit cell is discussed

Facile Synthesis of Uniform Zinc-blende ZnS Nanospheres with Excellent Photocatalytic Activity toward Methylene Blue Degradation

Institute of Scientific and Technical Information of China (English)

PENG Si-Yan; YANG Liu-Sai; LV Ying-Ying; YU Le-Shu; HUANG Hai-Jin; WU Li-Dan

2017-01-01

Uniform and well-dispersed ZnS nanospheres have been successfully synthesized via a facile chemical route.The crystal structure,morphology,surface area and photocatalytic properties of the sample were characterized by powder X-ray diffraction (XRD),scanning electron microscopy (SEM),Brunauer-Emmett-Teller (BET) and ultraviolet-visible (UV-vis) spectrum.The results of characterizations indicate that the products are identified as mesoporous zinc-blende ZnS nanospheres with an average diameter of 200 nm,which are comprised of nanoparticles with the crystallite size of about 3.2 nm calculated by XRD.Very importantly,photocatalytic degradation of methylene blue (MB)shows that the as-prepared ZnS nanospheres exhibit excellent photocatalytic activity with nearly 100％ of MB decomposed after UV-light irradiation for 25 min.The excellent photocatalytic activity of ZnS nanospheres can be ascribed to the large specific surface area and hierarchical mesoporous structure.

Evolution of ZnS Nanoparticles via Facile CTAB Aqueous Micellar Solution Route: A Study on Controlling Parameters

Directory of Open Access Journals (Sweden)

Gradzielski Michael

2008-01-01

Full Text Available Abstract Synthesis of semiconductor nanoparticles with new photophysical properties is an area of special interest. Here, we report synthesis of ZnS nanoparticles in aqueous micellar solution of Cetyltrimethylammonium bromide (CTAB. The size of ZnS nanodispersions in aqueous micellar solution has been calculated using UV-vis spectroscopy, XRD, SAXS, and TEM measurements. The nanoparticles are found to be polydispersed in the size range 6–15 nm. Surface passivation by surfactant molecules has been studied using FTIR and fluorescence spectroscopy. The nanoparticles have been better stabilized using CTAB concentration above 1 mM. Furthermore, room temperature absorption and fluorescence emission of powdered ZnS nanoparticles after redispersion in water have also been investigated and compared with that in aqueous micellar solution. Time-dependent absorption behavior reveals that the formation of ZnS nanoparticles depends on CTAB concentration and was complete within 25 min.

Solid-state ZnS quantum dot-sensitized solar cell fabricated by the Dip-SILAR technique

International Nuclear Information System (INIS)

Mehrabian, M; Mirabbaszadeh, K; Afarideh, H

2014-01-01

Solid-state quantum dot sensitized solar cells (QDSSCs) were fabricated with zinc sulfide quantum dots (ZnS QDs), which served as the light absorber and the recombination blocking layer simultaneously. ZnS QDs were prepared successfully by a novel successive ionic layer adsorption and reaction technique based on dip-coating (Dip-SILAR). The dependences of the photovoltaic parameters on the number of SILAR cycles (n) were investigated. The cell with n = 6 (particle average size ∼9 nm) showed an energy conversion efficiency of 2.72% under the illumination of one sun (AM 1.5, 100 mW cm −2 ). Here we investigate also the cohesion between ZnS QDs and ZnO film to obtain a well-covering QD layer. (paper)

Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

International Nuclear Information System (INIS)

Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

2008-01-01

The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

Polydopamine-modified nanocrystalline diamond thin films as a platform for bio-sensing applications

Czech Academy of Sciences Publication Activity Database

Pop-Georgievski, Ognen; Neykova, Neda; Proks, Vladimír; Houdková, Jana; Ukraintsev, Egor; Zemek, Josef; Kromka, Alexander; Rypáček, František

2013-01-01

Roč. 543, 30 September (2013), s. 180-186 ISSN 0040-6090. [International Conference on NANO-structures self-assembly - NANOSEA 2012 /4./. S. Margherita di Pula - Sardinie, 25.06.2012-29.06.2012] R&D Projects: GA ČR GAP108/11/1857; GA ČR(CZ) GBP108/12/G108 Grant - others:ČVUT(CZ) SGS10/297/OHK4/3T/14 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : nanocrystalline diamond films * NCD * polydopamine Subject RIV: CD - Macromolecular Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.867, year: 2013

Influence of thiol capping on the photoluminescence properties of L-cysteine-, mercaptoethanol- and mercaptopropionic acid-capped ZnS nanoparticles.

Science.gov (United States)

Tiwari, A; Dhoble, S J; Kher, R S

2015-11-01

Mercaptoethanol (ME), mercaptopropionic acid (MPA) and L-cysteine (L-Cys) having -SH functional groups were used as surface passivating agents for the wet chemical synthesis of ZnS nanoparticles. The effect of the thiol group on the optical and photoluminescence (PL) properties of ZnS nanoparticles was studied. L-Cysteine-capped ZnS nanoparticles showed the highest PL intensity among the studied capping agents, with a PL emission peak at 455 nm. The PL intensity was found to be dependent on the concentration of Zn(2+) and S(2-) precursors. The effect of buffer on the PL intensity of L-Cys-capped ZnS nanoparticles was also studied. UV/Vis spectra showed blue shifting of the absorption edge. Copyright © 2015 John Wiley & Sons, Ltd.

Solid state consolidation nanocrystalline copper-tungsten using cold spray

Energy Technology Data Exchange (ETDEWEB)

Hall, Aaron Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sarobol, Pylin [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argibay, Nicolas [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Clark, Blythe [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Diantonio, Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2015-09-01

It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

Preparation, properties and anticancer effects of mixed As4S4/ZnS nanoparticles capped by Poloxamer 407

International Nuclear Information System (INIS)

Bujňáková, Z.; Baláž, M.; Zdurienčíková, M.; Sedlák, J.; Čaplovičová, M.; Čaplovič, Ľ.; Dutková, E.; Zorkovská, A.; Turianicová, E.; Baláž, P.; Shpotyuk, O.

2017-01-01

Arsenic sulfide compounds have a long history of application in a traditional medicine. In recent years, realgar has been studied as a promising drug in cancer treatment. In this study, the arsenic sulfide (As 4 S 4 ) nanoparticles combined with zinc sulfide (ZnS) ones in different molar ratio have been prepared by a simple mechanochemical route in a planetary mill. The successful synthesis and structural properties were confirmed and followed via X-ray diffraction and high-resolution transmission electron microscopy measurements. The morphology of the particles was studied via scanning electron microscopy and transmission electron microscopy methods and the presence of nanocrystallites was verified. For biological tests, the prepared As 4 S 4 /ZnS nanoparticles were further milled in a circulation mill in a water solution of Poloxamer 407 (0.5 wt%), in order to cover the particles with this biocompatible copolymer and to obtain stable nanosuspensions with unimodal distribution. The average size of the particles in the nanosuspensions (~ 120 nm) was determined by photon cross-correlation spectroscopy method. Stability of the nanosuspensions was determined via particle size distribution and zeta potential measurements, confirming no physico-chemical changes for several months. Interestingly, with the increasing amount of ZnS in the sample, the stability was improved. The anti-cancer effects were tested on two melanoma cell lines, A375 and Bowes, with promising results, confirming increased efficiency of the samples containing both As 4 S 4 and ZnS nanocrystals. - Highlights: • Mixed As 4 S 4 /ZnS nanoparticles were prepared by dry milling in the first stage • Stable nanosuspensions of As 4 S 4 /ZnS nanoparticles capped by Poloxamer 407 were prepared by wet milling in the second stage • ZnS in the samples is beneficial: higher values of S A , stability, solubility and anticancer activity were improved

Stable aqueous ZnS quantum dots obtained using (3-mercaptopropyl)trimethoxysilane as a capping molecule

International Nuclear Information System (INIS)

Li Hui; Shih, Wan Y; Shih, W-H

2007-01-01

We have examined the synthesis and stability of ZnS quantum dots (QDs) using an all-aqueous route at pH = 12 with (3-mercaptopropyl)trimethoxysilane (MPS) as the capping molecule. The MPS-capped ZnS QDs obtained were well dispersed with a particle size around 5 nm and a cubic zinc blende crystalline structure. The QDs exhibited optimal photoluminescence (PL) emission when the MPS:Zn:S ratio was between 1/4:2:1 and 1/2:2:1. Compared with the earlier obtained ZnS QDs capped with 3-mercaptopropionic acid (MPA), the MPS-capped ZnS QDs exhibited a similar, high quantum yield, 42% and 25% for MPS:Zn:S 1/2:2:1 and 1/4:2:1, respectively, but much better photostability. With the MPS:Zn:S ratio of 1/4:2:1, we showed that at room temperature and under the normal laboratory lighting conditions, the MPS-capped QDs were able to maintain their PL intensity for more than 50 days without degradation. We further showed that the MPS-capped QDs were stable not only in their synthesis solution but also in deionized (DI) water and in phosphate buffer saline (PBS) solution. The QDs with MPS:Zn:S=1/2:2:1 were able to stay at 50 deg. C for more than 20 h without degrading the PL intensity. They were also stable under continuous UV exposure for 3 h. With the high quantum yield and significantly improved photostability, the MPS-capped ZnS QDs could be good imaging tools for many biological applications

Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

NARCIS (Netherlands)

Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

2008-01-01

Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

Luminescence properties of Ag-, Ga-doped ZnO and ZnO-ZnS thin films

Energy Technology Data Exchange (ETDEWEB)

Kushnirenko, V.I.; Khomchenko, V.S.; Zavyalova, L.V. [V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauki 45, 03028 Kiev (Ukraine); Zashivailo, T.V. [National Technical University of Ukraine ' ' KPI' ' , Pr. Pobedy 37, 03056 Kiev (Ukraine)

2012-08-15

Thin films of ZnS were grown by metal-organic chemical vapor deposition (MOCVD) method under atmospheric pressure onto glass substrates. ZnO-ZnS:[Ag, Ga] and ZnO:[Ag, Ga] thin films were prepared by oxidation and Ag, Ga doping of ZnS films at temperatures of 700-775 C for 0.5-1 h. Crystalline quality and luminescent properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. It is found that the doped films have a polycrystalline structure without preferred orientation and consist of small grains gathered into conglomerates. The shape of photoluminescence (PL) spectra of the films depends strongly on the preparation conditions. The ZnO-ZnS:[Ag, Ga] films exhibited the blue and green emission connected with the presence of silver and oxygen, respectively. The ZnO:[Ag, Ga] films revealed the white emission originated from different defect-related transitions. The possible origin of radiative centers is discussed (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition

Science.gov (United States)

Wang, Cai-Feng; Li, Qing-Shan; Zhang, Li-Chun; Lv, Lei; Qi, Hong-Xia

2007-05-01

ZnS films were deposited on porous Si (PS) substrates with different porosities by pulsed laser deposition. The photoluminescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films, the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity, a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films, and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction, showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface, some cracks appear in ZnS films, which could be seen from scanning electron microscope images.

Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon [Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of); Song, Min-Jung, E-mail: dslim@korea.ac.kr [Center for Advanced Device Materials, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of)

2010-12-17

Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a {zeta}-potential and average particle size of - 60.5 mV and {approx} 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 {+-} 0.4 x 10{sup 11} cm{sup -2}) and smooth surface were consequently fabricated.

Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

International Nuclear Information System (INIS)

Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon; Song, Min-Jung

2010-01-01

Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a ζ-potential and average particle size of - 60.5 mV and ∼ 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 ± 0.4 x 10 11 cm -2 ) and smooth surface were consequently fabricated.

Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

Energy Technology Data Exchange (ETDEWEB)

Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

2014-10-15

Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

Enhancement of visible light photocatalytic activity of ZnS and CdS nanoparticles based on organic and inorganic coating

Energy Technology Data Exchange (ETDEWEB)

Soltani, Nayereh, E-mail: nayereh.soltani@gmail.com [Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Saion, Elias; Yunus, W. Mahmood Mat; Erfani, Maryam; Navasery, Manizheh; Bahmanrokh, Ghazaleh [Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Rezaee, Kadijeh [Department of Nuclear Engineering, Faculty of Advance Sciences and Technologies, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2014-01-30

Coating of ZnS and CdS nanoparticles with organic and inorganic materials can extend their light absorption in the visible region and their stability against photo-corrosion. Such materials could emerge as excellent photocatalysts for the elimination of pollutants from aqueous media using solar energy. In this study, PVP (polyvinyl pyrrolidone)-capped ZnS and CdS nanoparticles, ZnS/CdS and CdS/ZnS core shell nanoparticles were synthesized by microwave irradiation method and characterized using different techniques. The XRD patterns exhibited cubic and hexagonal structures for coated ZnS and CdS nanoparticles, respectively. Morphological evaluation of TEM images showed that the nanoparticles are generally spherical in shape. The UV–visible spectra confirmed a shift in the band gap of coated nanoparticles to longer or shorter wavelengths due to size and potential-well effects. The photocatalytic activity of nanoparticles toward dye degradation under visible light was found to be improved after coating. PVP-capped ZnS and CdS exhibited an enhancement in the initial methylene blue degradation efficiency by a factor of about 1.3. ZnS nanoparticles coated by CdS displayed the initial efficiency 3.2 times higher than bare ZnS. The maximum dye removal was obtained in presence of CdS/ZnS core shells which is 1.4 times more efficient than bare CdS.

Pseudo-bi-enzyme glucose sensor: ZnS hollow spheres and glucose oxidase concerted catalysis glucose.

Science.gov (United States)

Shuai, Ying; Liu, Changhua; Wang, Jia; Cui, Xiaoyan; Nie, Ling

2013-06-07

This work creatively uses peroxidase-like ZnS hollow spheres (ZnS HSs) to cooperate with glucose oxidase (GOx) for glucose determinations. This approach is that the ZnS HSs electrocatalytically oxidate the enzymatically generated H2O2 to O2, and then the O2 circularly participates in the previous glucose oxidation by glucose oxidase. Au nanoparticles (AuNPs) and carbon nanotubes (CNTs) are used as electron transfer and enzyme immobilization matrices, respectively. The biosensor of glucose oxidase-carbon nanotubes-Au nanoparticles-ZnS hollow spheres-gold electrode (GOx-CNT-AuNPs-ZnS HSs-GE) exhibits a rapid response, a low detection limit (10 μM), a wide linear range (20 μM to 7 mM) as well as good anti-interference, long-term longevity and reproducibility.

Frequency-dependent failure mechanisms of nanocrystalline gold interconnect lines under general alternating current

Science.gov (United States)

Luo, X. M.; Zhang, B.; Zhang, G. P.

2014-09-01

Thermal fatigue failure of metallization interconnect lines subjected to alternating currents (AC) is becoming a severe threat to the long-term reliability of micro/nanodevices with increasing electrical current density/power. Here, thermal fatigue failure behaviors and damage mechanisms of nanocrystalline Au interconnect lines on the silicon glass substrate have been investigated by applying general alternating currents (the pure alternating current coupled with a direct current (DC) component) with different frequencies ranging from 0.05 Hz to 5 kHz. We observed both thermal fatigue damages caused by Joule heating-induced cyclic strain/stress and electromigration (EM) damages caused by the DC component. Besides, the damage formation showed a strong electrically-thermally-mechanically coupled effect and frequency dependence. At lower frequencies, thermal fatigue damages were dominant and the main damage forms were grain coarsening with grain boundary (GB) cracking/voiding and grain thinning. At higher frequencies, EM damages took over and the main damage forms were GB cracking/voiding of smaller grains and hillocks. Furthermore, the healing effect of the reversing current was considered to elucidate damage mechanisms of the nanocrystalline Au lines generated by the general AC. Lastly, a modified model was proposed to predict the lifetime of the nanocrystalline metal interconnect lines, i.e., that was a competing drift velocity-based approach based on the threshold time required for reverse diffusion/healing to occur.

Bilirubin adsorption on nanocrystalline titania films

International Nuclear Information System (INIS)

Yang Zhengpeng; Si Shihui; Fung Yingsing

2007-01-01

Bilirubin produced from hemoglobin metabolism and normally conjugated with albumin is a kind of lipophilic endotoxin, and can cause various diseases when its concentration is high. Bilirubin adsorption on the nanocrystalline TiO 2 films was investigated using quartz crystal microbalance, UV-vis and IR techniques, and factors affecting its adsorption such as pH, bilirubin concentration, solution ionic strength, temperature and thickness of TiO 2 films were discussed. The amount of adsorption and parameters for the adsorption kinetics were estimated from the frequency measurements of quartz crystal microbalance. A fresh surface of the nanocrystalline TiO 2 films could be photochemically regenerated because holes and hydroxyl radicals were generated by irradiating the nanocrystalline TiO 2 films with UV light, which could oxidize and decompose organic materials, and the nanocrystalline TiO 2 films can be easily regenerated when it is used as adsorbent for the removal of bilirubin

Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

Indian Academy of Sciences (India)

WINTEC

goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.

Investigations on structural and optical properties of starch capped ZnS nanoparticles synthesized by microwave irradiation method

Science.gov (United States)

Lalithadevi, B.; Mohan Rao, K.; Ramananda, D.

2018-05-01

Following a green synthesis method, zinc sulfide (ZnS) nanoparticles were prepared by chemical co-precipitation technique using starch as capping agent. Microwave irradiation was used as heating source. X-ray diffraction studies indicated that nanopowders obtained were polycrystalline possessing ZnS simple cubic structure. Transmission electron microscopic studies indicated that starch limits the agglomeration by steric stabilization. Interaction between ZnS and starch was confirmed by Fourier transform infrared spectroscopy as well as Raman scattering studies. Quantum size effects were observed in optical absorption studies while quenching of defect states on nanoparticles was improved with increase in starch addition as indicated by photoluminescence spectra.

First-principle study on magnetic properties of Mn/Fe codoped ZnS

Energy Technology Data Exchange (ETDEWEB)

Chen Hongxia, E-mail: chenhongxia1@sina.com [College of Physical Science and Electronic Techniques, Yancheng Teachers University, Yancheng 224002 (China); Department of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2012-07-15

We studied the magnetic properties of Mn/Fe codoped ZnS comparatively with and without defects using first-principle calculation. The calculated results indicate that the Mn/Fe codoped ZnS system tends to stabilize in a ferrimagnetic (FiM) configuration. To obtain a ferromagnetic (FM) configuration, we consider the doped system with defects, such as S or Zn vacancy. The calculated results indicate that the doped system with Zn vacancy favors FiM states. Although the FM states of the doped system with S vacancy are more stable than the FiM states in negative charge states, the FM states are not stable enough to exist. Finally, we replaced an S atom by a C atom in the doped system. The C atom prefers to substitute the S atom connecting Mn and Fe atoms. The formation energy of this defect is -0.40 eV, showing that Mn/Fe/C codoped ZnS can be fabricated easily by experiments. Furthermore, the FM state was lower in energy than the FiM state by 114 meV. Such a large energy difference between the FM and FiM states implies that room temperature ferromagnetism could be expected in such a system. - Highlights: Black-Right-Pointing-Pointer Mn/Fe codoped ZnS system tends to stabilize in a ferrimagnetic configuration with or without defects. Black-Right-Pointing-Pointer By additional C codoping, the doped system tends to stabilize in a ferromagnetic configuration. Black-Right-Pointing-Pointer Energy difference between ferrimagnetic and ferromagnetic states is 114 meV. Black-Right-Pointing-Pointer This indicates room temperature ferromagnetism can be likely in such a system.

Granular nanocrystalline zirconia electrolyte layers deposited on porous SOFC cathode substrates

International Nuclear Information System (INIS)

Seydel, Johannes; Becker, Michael; Ivers-Tiffee, Ellen; Hahn, Horst

2009-01-01

Thin granular yttria-stabilized zirconia (YSZ) electrolyte layers were prepared by chemical vapor synthesis and deposition (CVD/CVS) on a porous substoichiometric lanthanum-strontium-manganite (ULSM) solid oxide fuel cell cathode substrate. The substrate porosity was optimized with a screen printed fine porous buffer layer. Structural analysis by scanning electron microscopy showed a homogeneous, granular nanocrystalline layer with a microstructure that was controlled via reactor settings. The CVD/CVS gas-phase process enabled the deposition of crack-free granular YSZ films on porous ULSM substrates. The electrolyte layers characterized with impedance spectroscopy exhibited enhanced grain boundary conductivity.

Synthesis of Nanocrystalline SnOx (x = 1–2 Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

Directory of Open Access Journals (Sweden)

Zulkarnain Zainal

2011-09-01

Full Text Available Nanocrystalline SnOx (x = 1–2 thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

International Nuclear Information System (INIS)

Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

2013-01-01

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

Energy Technology Data Exchange (ETDEWEB)

Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2013-04-15

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

Precipitation, stabilization and molecular modeling of ZnS nanoparticles in the presence of cetyltrimethylammonium bromide.

Science.gov (United States)

Praus, Petr; Dvorský, Richard; Horínková, Petra; Pospíšil, Miroslav; Kovář, Petr

2012-07-01

ZnS nanoparticles were precipitated in aqueous dispersions of cationic surfactant cetyltrimethylammonium bromide (CTAB). The sphere radii of ZnS nanoparticles calculated by using band-gap energies steeply decreased from 4.5 nm to 2.2 nm within CTAB concentrations of 0.4-1.5 mmol L(-1). Above the concentration of 1.5 mmol L(-1), the radii were stabilized at R=2.0 nm and increased up to R=2.5 nm after 24 h. The hydrodynamic diameters of CTAB-ZnS structures observed by the dynamic light scattering (DLS) method ranged from 130 nm to 23 nm depending on CTAB concentrations of 0.5-1.5 mmol L(-1). The complex structures were observed by transmission electron microscopy (TEM). At the higher CTAB concentrations, ZnS nanoparticles were surrounded by CTA(+) bilayers forming positively charged micelles with the diameter of 10nm. The positive zeta-potentials of the micelles and their agglomerates were from 16 mV to 33 mV. Wurtzite and sphalerite nanoparticles with R=2.0 nm and 2.5 nm covered by CTA(+) were modeled with and without water. Calculated sublimation energies confirmed that a bilayer arrangement of CTA(+) on the ZnS nanoparticles was preferred to a monolayer. Copyright © 2012 Elsevier Inc. All rights reserved.

Optically stimulated luminescence of ZnO obtained by thermal treatment of ZnS chemically synthesized

International Nuclear Information System (INIS)

Cruz V, C.; Burruel I, S.E.; Orante B, V.R.; Grijalva M, H.; Perez S, R.; Bernal, R.

2005-01-01

In this work, we report the optically stimulated luminescence (OSL) dosimetry of new nano phosphors of ZnO obtained by thermal annealing of chemically synthesized ZnS powder. The synthesized ZnS nano powder was compressed in order to form pellet shaped pellets, which were afterwards subjected to a thermal annealing at 700 C during 24 h under air atmosphere. X-ray diffraction (XRD) patterns and energy-disperse X-ray Spectrometry (EDS) analyses confirmed the transformation of ZnS to ZnO. Samples were exposed to several doses of beta radiation up to 600 Gy, and the optically stimulated luminescence with 470 nm wavelength light was recorded as a function of dose. The intensity of the OSL signal increases by increasing dose, for what it is concluded that these new phosphor materials are suitable to be used in optically stimulated luminescence dosimetry. (Author)

Synthesis of Mn-doped ZnS architectures in ternary solution and their optical properties

Energy Technology Data Exchange (ETDEWEB)

Wang Xinjuan, E-mail: wangxj@hnu.edu.cn [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Zhang Qinglin [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Zou Bingsuo, E-mail: zoubs@bit.edu.cn [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Micro-nano Technology Center and School of MSE, BIT, Beijing 100081 (China); Lei Aihua; Ren Pinyun [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China)

2011-10-01

Mn-doped ZnS sea urchin-like architectures were fabricated by a one-pot solvothermal route in a ternary solution made of ethylenediamine, ethanolamine and distilled water. The as-prepared products were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and photoluminescence spectra (PL). It was demonstrated that the as-prepared sea urchin-like architectures with diameter of 0.5-1.5 {mu}m were composed of nanorods, possessing a wurtzite structures. The preferred growth orientation of nanorods was found to be the [0 0 2] direction. The PL spectra of the Mn-doped ZnS sea urchin-like architectures show a strong orange emission at 587 nm, indicating the successful doping of Mn{sup 2+} ions into ZnS host. Ethanolamine played the role of oriented-assembly agent in the formation of sea urchin-like architectures. A possible growth mechanism was proposed to explain the formation of sea urchin-like architectures.

Synthesis of Mn-doped ZnS architectures in ternary solution and their optical properties

International Nuclear Information System (INIS)

Wang Xinjuan; Zhang Qinglin; Zou Bingsuo; Lei Aihua; Ren Pinyun

2011-01-01

Mn-doped ZnS sea urchin-like architectures were fabricated by a one-pot solvothermal route in a ternary solution made of ethylenediamine, ethanolamine and distilled water. The as-prepared products were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and photoluminescence spectra (PL). It was demonstrated that the as-prepared sea urchin-like architectures with diameter of 0.5-1.5 μm were composed of nanorods, possessing a wurtzite structures. The preferred growth orientation of nanorods was found to be the [0 0 2] direction. The PL spectra of the Mn-doped ZnS sea urchin-like architectures show a strong orange emission at 587 nm, indicating the successful doping of Mn 2+ ions into ZnS host. Ethanolamine played the role of oriented-assembly agent in the formation of sea urchin-like architectures. A possible growth mechanism was proposed to explain the formation of sea urchin-like architectures.

Synthesis, structural and optical properties of PVP coated transition metal doped ZnS nanoparticles

Science.gov (United States)

Desai, N. V.; Shaikh, I. A.; Rawal, K. G.; Shah, D. V.

2018-05-01

The room temperature photoluminescence (PL) of transition metal doped ZnS nanoparticles is investigated in the present study. The PVP coated ZnS nanoparticles doped with transition metals are synthesized by facile wet chemical co-precipitation method with the concentration of impurity 1%. The UV-Vis absorbance spectra have a peak at 324nm which shifts slightly to 321nm upon introduction of the impurity. The incorporation of the transition metal as dopant is confirmed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The particle size and the morphology are characterized by scanning electron microscopy (SEM), XRD and UV-Vis spectroscopy. The average size of synthesized nanoparticles is about 2.6nm. The room temperature photoluminescence (PL) of undoped and doped ZnS nanoparticles show a strong and sharp peak at 782nm and 781.6nm respectively. The intensity of the PL changes with the type of doping having maximum for manganese (Mn).

Two and four photon absorption and nonlinear refraction in undoped, chromium doped and copper doped ZnS quantum dots

Science.gov (United States)

Sharma, Dimple; Malik, B. P.; Gaur, Arun

2015-12-01

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV-vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3-5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β2), nonlinear refractive index (n2), third order nonlinear susceptibility (χ3) at wavelength 532 nm and Four photon absorption coefficient (β4) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.

Comparative analysis of Dye-Sensitized Solar Cells (DSSC) having different nanocrystalline TiO2 layer structures

International Nuclear Information System (INIS)

Forcade, Fresnel; Gonzalez, Bernardo; Vigil, Elena; Jennings, James R.; Duna, Halina; Wang, Hongxia; Peter, Laurence M.

2009-01-01

Full text: Dye-sensitized solar cells (DSSC) are very prospective because of their low cost and comparatively not so low efficiency. This represents an advantage together with the innocuous character of the constituent materials. We study different types of DSSC. The procedure for making them has been the same except for the TiO 2 layer structure. This layer must be porous and nanocrystalline in order to increase light absorption by the sensitizer. On the other hand, this condition causes that the electrolyte contacts the transparent conducting oxide (TCO) underneath the TiO 2 originating undesired recombinations. Also the electrical contact of the Tio to the TCO depends on the technology used to deposit the TiO 2 . In order to avoid possible leakage currents caused by recombinations from the TCO to the electrolyte and improve TiO 2 -TCO electrical contact, a thin TiO 2 film is placed in between the porous TiO 2 layer and the TCO. Different structures are obtained using different technologies to obtain the thin TiO 2 film. These structures are analyzed from their volt-amperic characteristic, external quantum efficiency spectra and voltage decay observed when light is suppressed. Results obtained allow making recommendations regarding nanocrystalline TiO 2 structure to be used in DSSC. (author)

Ultrafast carrier dynamics and third-order nonlinear optical properties of AgInS2/ZnS nanocrystals

Science.gov (United States)

Yu, Kuai; Yang, Yang; Wang, Junzhong; Tang, Xiaosheng; Xu, Qing-Hua; Wang, Guo Ping

2018-06-01

Broad photoluminescence (PL) emission, a large Stokes shift and extremely long-lived radiative lifetimes are the characteristics of ternary I–III–VI semiconductor nanocrystals (NCs), such as CuInS2 and AgInS2. However, the lack of understanding regarding the intriguing PL mechanisms and photo-carrier dynamics limits their further applications. Here, AgInS2 and AgInS2/ZnS NCs were chemically synthesized and their carrier dynamics were studied by time-resolved PL spectroscopy. The results demonstrated that the surface defect state, which contributed dominantly to the non-radiative decay processes, was effectively passivated through ZnS alloying. Femtosecond transient absorption spectroscopy was also used to investigate the carrier dynamics, revealing the electron storage at the surface state and donor state. Furthermore, the two photon absorption properties of AgInS2 and AgInS2/ZnS NCs were measured using an open-aperture Z-scan technique. The improved third-order nonlinear susceptibility {χ }(3) of AgInS2 through ZnS alloying demonstrates potential application in two photon PL biological imaging.

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

Science.gov (United States)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Electronic and optical properties of nanocrystalline WO3 thin films studied by optical spectroscopy and density functional calculations

International Nuclear Information System (INIS)

Johansson, Malin B; Niklasson, Gunnar A; Österlund, Lars; Baldissera, Gustavo; Persson, Clas; Valyukh, Iryna; Arwin, Hans

2013-01-01

The optical and electronic properties of nanocrystalline WO 3 thin films prepared by reactive dc magnetron sputtering at different total pressures (P tot ) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low P tot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies E g ≈ 3.1 eV, which increase with increasing P tot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO 3 , and monoclinic γ- and ε-WO 3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO 3 and γ-WO 3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that E g in ε-WO 3 is higher than in the δ-WO 3 and γ-WO 3 phases, which provides an explanation for the P tot dependence of the optical data. (paper)

Electronic and optical properties of nanocrystalline WO3 thin films studied by optical spectroscopy and density functional calculations

Science.gov (United States)

Johansson, Malin B.; Baldissera, Gustavo; Valyukh, Iryna; Persson, Clas; Arwin, Hans; Niklasson, Gunnar A.; Österlund, Lars

2013-05-01

The optical and electronic properties of nanocrystalline WO3 thin films prepared by reactive dc magnetron sputtering at different total pressures (Ptot) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low Ptot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies Eg ≈ 3.1 eV, which increase with increasing Ptot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO3, and monoclinic γ- and ε-WO3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO3 and γ-WO3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that Eg in ε-WO3 is higher than in the δ-WO3 and γ-WO3 phases, which provides an explanation for the Ptot dependence of the optical data.

Room temperature growth of nanocrystalline anatase TiO{sub 2} thin films by dc magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Singh, Preetam, E-mail: preetamphy@gmail.co [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Kaur, Davinder [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

2010-03-01

We report, the structural and optical properties of nanocrystalline anatase TiO{sub 2} thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO{sub 2} film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO{sub 2} films for device applications with different refractive index, by changing the deposition parameters.

A simple one-step synthesis of ZnS nanoparticles via salt-alkali-composited-mediated method and investigation on their comparative photocatalytic activity

International Nuclear Information System (INIS)

Xiang, Donghu; Zhu, Yabo; He, Zhanjun; Liu, Zhangsheng; Luo, Jin

2013-01-01

Graphical abstract: The TEM image shows that the as-synthesized ZnS particle size was estimated to be about 40 nm and this newly synthesized ZnS nanoparticles can be as a promising photocatalytic degradation material for the organic pollutant removal. Display Omitted Highlights: ► ZnS nanoparticles with cubic phase have been successfully synthesized via salt-alkali-composited-mediated method (SACM) for the first time and this method has not been found so far. ► Its band gap (E g ) is a little bigger than commercial ZnS particle mainly due to quantum size effect. ► The as-synthesized ZnS nanoparticles show much more efficient photocatalytic degradation on methyl orange than commercial ZnS powder. -- Abstract: ZnS nanoparticles have been successfully synthesized via salt-alkali-composited-mediated method (SACM) for the first time, using a mixture of LiNO 3 and LiOH (LiNO 3 /LiOH = 60.7:39.3) as a reaction solvent, sodium sulfide and zinc nitrate as reactants at temperature of 210 °C for 24 h in the absence of organic dispersant or capping agents. X-ray diffraction, environment scanning electron microscopy (ESEM) and Transmission electron microscopy (TEM) indicated that the as-synthesized products were well crystallized and belonged to nano-scale. Their UV–vis absorption spectrum demonstrated a band gap of 3.6406 eV corresponding to the absorption edge of 340 nm. The experimental result of photocatalytic degradation on methyl orange by the nano-ZnS showed much better photocatalysis than that by the commercial ZnS powder under the irradiation of ultraviolet light and visible light, respectively.

Potential effect of CuInS2/ZnS core-shell quantum dots on P3HT/PEDOT:PSS heterostructure based solar cell

Science.gov (United States)

Jindal, Shikha; Giripunje, S. M.

2018-07-01

Nanostructured quantum dots (QDs) are quite promising in the solar cell application due to quantum confinement effect. QDs possess multiple exciton generation and large surface area. The environment friendly CuInS2/ZnS core-shell QDs were prepared by solvothermal method. Thus, the 3 nm average sized CuInS2/ZnS QDs were employed in the bulk heterojunction device and the active blend layer consisting of the P3HT and CuInS2/ZnS QDs was investigated. The energy level information of CuInS2/ZnS QDs as an electron acceptor was explored by ultra violet photoelectron spectroscopy. Bulk heterojunction hybrid device of ITO/PEDOT:PSS/P3HT: (CuInS2/ZnS QDs)/ZnO/Ag was designed by spin coating approach and its electrical characterization was investigated by solar simulator. Current density - voltage characteristics shows the enhancement in power conversion efficiency with increasing concentration of CuInS2/ZnS QDs in bulk heterojunction device.

Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles

International Nuclear Information System (INIS)

Suryajaya; Nabok, A.; Davis, F.; Hassan, A.; Higson, S.P.J.; Evans-Freeman, J.

2008-01-01

CdS and ZnS semiconducting colloid nanoparticles coated with the organic shell, containing either SO 3 - or NH 2 + groups, were prepared using the aqueous phase synthesis. The multilayer films of CdS (or ZnS) were deposited onto glass, quartz and silicon substrates using the technique of electrostatic self-assembly. The films produced were characterized with UV-vis spectroscopy, spectroscopic ellipsometry and atomic force microscopy. A substantial blue shift of the main absorption band with respect to the bulk materials was found for both CdS and ZnS films. The Efros equation in the effective mass approximation (EMA) theoretical model allowed the evaluation of the nanoparticle radius of 1.8 nm, which corresponds well to the ellipsometry results. AFM shows the formation of larger aggregates of nanoparticles on solid surfaces

A facile synthesis of ZnS nanocrystallites by pyrolysis of single

Indian Academy of Sciences (India)

)2 and ZnCl2 (cinnamtsczH)2 (cinnamtsczH = cinnamaldehyde thiosemicarbazone) as single source precursors. The prepared ZnS nanocrystallites were characterized by powder X-ray diffraction (XRD), transmission electron microscopy ...

Correlation between photoconductivity in nanocrystalline titania and short circuit current transients in MEH-PPV/titania solar cells

International Nuclear Information System (INIS)

Xie, Z B; Henry, B M; Kirov, K R; Barkhouse, D A R; Burlakov, V M; Smith, H E; Grovenor, C R M; Assender, H E; Briggs, G A D; Kano, M; Tsukahara, Y

2007-01-01

We report the first experimental observation of a direct relationship between electron transport in different nanocrystalline TiO 2 thin films and the photovoltaic performance of TiO 2 /MEH-PPV composite solar cells made using these same TiO 2 films. We show that the transient behaviour in the composite solar cells under illumination can be explained by the transient photoconductivity performance of the TiO 2 layer

Cu-filled through-hole electrode for ZnS using high adhesive strength Ni–P thin film

International Nuclear Information System (INIS)

Okamoto, Naoki; Miyamoto, Megumi; Saito, Takeyasu; Kondo, Kazuo; Fukumoto, Takafumi; Hirota, Masaki

2012-01-01

Zinc sulfide (ZnS) and related materials are important for applications in ultraviolet light emitting diodes, cathode ray tubes, flat panel displays and infrared ray (IR) windows. In order to utilize these optoelectronics devices in electronic products, 3D-packaging as well as wafer level packaging (WLP) are needed. The two methods used to achieve this are physical vapor deposition (PVD) and conventional electroless deposition processes. However, both these methods have problems. Films made by PVD are not always of uniform thickness if the substrate is not flat. On the other hand, films made by conventional electroless deposition have weak adhesive strength to substrates. In order to overcome these limitations, we developed a new electroless deposition process to form nickel–phosphorus (Ni–P) films. This process combines catalyzation (Cu deposition) and electroless deposition processes. The films made using the new process show high adhesive strength in tensile tests and also very uniform thickness. In addition, conformal Cu filling of through-holes was achieved by using this new electroless deposition process.

Green synthesis of CuInS2/ZnS core-shell quantum dots by facile solvothermal route with enhanced optical properties

Science.gov (United States)

Jindal, Shikha; Giripunje, Sushama M.; Kondawar, Subhash B.; Koinkar, Pankaj

2018-03-01

We report an eco-friendly green synthesis of highly luminescent CuInS2/ZnS core-shell quantum dots (QDs) with average particle size ∼ 3.9 nm via solvothermal process. The present study embodies the intensification of CuInS2/ZnS QDs properties by the shell growth on the CuInS2 QDs. The as-prepared CuInS2 core and CuInS2/ZnS core-shell QDs have been characterized using a range of optical and structural techniques. By adopting a low temperature growth of CuInS2 core and high temperature growth of CuInS2/ZnS core-shell growth, the tuning of absorption and photoluminescence emission spectra were observed. Optical absorption and photoluminescence spectroscopy probe the effect of ZnS passivation on the electronic structure of the CuInS2 dots. In addition, QDs have been scrutinized using ultra violet photoelectron spectroscopy (UPS) to explore their electronic band structure. The band level positions of CuInS2 and CuInS2/ZnS QDs suffices the demand of non-toxic acceptor material for electronic devices. The variation in electronic energy levels of CuInS2 core with the coating of wide band gap ZnS shell influence the removal of trap assisted recombination on the surface of the core. QDs exhibited tunable emission from red to orange region. These studies reveal the feasibility of QDs in photovoltaic and light emitting diodes.

Nano structured TiO2 thin films by polymeric precursor method

International Nuclear Information System (INIS)

Stroppa, Daniel Grando; Giraldi, Tania Regina; Leite, Edson Roberto; Varela, Jose Arana; Longo, Elson

2008-01-01

This work focuses in optimizing setup for obtaining TiO 2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and NMR were applied for precursor's characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO 2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m 2 /g and monolayers thickness within 20 and 128 nm. (author)

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni–W alloy films

International Nuclear Information System (INIS)

Armstrong, D.E.J.; Haseeb, A.S.M.A.; Roberts, S.G.; Wilkinson, A.J.; Bade, K.

2012-01-01

Nanocrystalline nickel–tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni–12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni–12.7 at.%W was in the range of 1.49–5.14 MPa √m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: ► Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. ► Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. ► Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. ► Fracture toughness values lower than that of nanocrystalline nickel.

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films

Energy Technology Data Exchange (ETDEWEB)

Armstrong, D.E.J., E-mail: david.armstrong@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Haseeb, A.S.M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Roberts, S.G.; Wilkinson, A.J. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Bade, K. [Institut fuer Mikrostrukturtechnik (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2012-04-30

Nanocrystalline nickel-tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni-12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni-12.7 at.%W was in the range of 1.49-5.14 MPa {radical}m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: Black-Right-Pointing-Pointer Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. Black-Right-Pointing-Pointer Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. Black-Right-Pointing-Pointer Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. Black-Right-Pointing-Pointer Fracture toughness values lower than that of nanocrystalline nickel.

Photochemical solar cells based on dye-sensitization of nanocrystalline TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Deb, S.K.; Ellingson, R.; Ferrere, S.; Frank, A.J.; Gregg, B.A.; Nozik, A.J.; Park, N.; Schlichthoerl, G. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

A photoelectrochemical solar cell that is based on the dye-sensitization of thin nanocrystalline films of TiO{sub 2} (anatase) nanoparticles in contact with a non-aqueous liquid electrolyte is described. The cell, fabricated at NREL, shows a conversion efficiency of {approximately} 9.2% at AM1.5, which approaches the best reported value of 10--11% by Graetzel at EPFL in Lausanne, Switzerland. The femtosecond (fs) pump-probe spectroscopy has been used to time resolve the injection of electrons into the conduction band of nanocrystalline TiO{sub 2} films under ambient conditions following photoexcitation of the adsorbed Ru(II)-complex dye. The measurement indicates an instrument-limited {minus}50 fs upper limit on the electron injection time. The authors also report the sensitization of nanocrystalline TiO{sub 2} by a novel iron-based dye, CIS-[Fe{sup II}(2,2{prime}-bipyridine-4,4,{prime}-dicarboxylic acid){sub 2}(CN){sub 2}], a chromophore with an extremely short-lived, nonemissive excited state. The dye also exhibits a unique band selective sensitization through one of its two absorption bands. The operational principle of the device has been studied through the measurement of electric field distribution within the device structure and studies on the pH dependence of dye-redox potential. The incorporation of WO{sub 3}-based electrochromic layer into this device has led to a novel photoelectrochromic device structure for smart window application.

Mesoporous nanocrystalline film architecture for capacitive storage devices

Science.gov (United States)

Dunn, Bruce S.; Tolbert, Sarah H.; Wang, John; Brezesinski, Torsten; Gruner, George

2017-05-16

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

One-Step Thermolysis Synthesis of Divalent Transition Metal Ions Monodoped and Tridoped CdS and ZnS Luminescent Nanomaterials

Directory of Open Access Journals (Sweden)

S. E. Saeed

2014-01-01

Full Text Available Mn2+, Co2+, or Ni2+ monodoped CdS (or ZnS and Mn2+-Co2+-Ni2+ tridoped CdS (or ZnS have been successfully synthesized by novel one-step thermolysis method using thiourea as a sulphur source. The synthesized nanomaterials were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, and scanning electron microscopy (SEM. It is found that the average diameter and morphology of the synthesized samples varied with the nature of dopant ion. The successful doping of Mn2+-Co2+-Ni2+ tridoped ions into the host CdS (or ZnS was proved by the EDX spectra. The luminescence of CdS is only enhanced when monodoped with Mn2+ whereas it is enhanced when ZnS is either monodoped with Mn2+, Co2+, or Ni2+ or tridoped with Mn2+-Co2+-Ni2+. The synthesized samples could therefore offer opportunities for further fundamental research and technological applications.

Comparative study of as-implanted and pre-damaged ion-beam-synthesized ZnS nanocrystallites in SiO sub 2

CERN Document Server

Gao, K Y; Grosshans, I; Hipp, W; Stritzker, B

2002-01-01

The semiconducting ZnS nanocrystallites were synthesized by sequential high dose ion implantation of Zn and S in thermally grown SiO sub 2 on Si(1 0 0) and subsequent rapid thermal annealing (RTA). Some samples were pre-implanted with Ar ions in order to investigate the influence of radiation induced damage on the formation of ZnS nanocrystallites. The crystal structure of the ZnS crystallites, their size distribution and the concentration depth profile were analyzed by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and cross-sectional transmission-electron-microscopy (XTEM). The XRD results indicate, that the phase transition from cubic zinc blende to hexagonal wurtzite structure of ZnS nanocrystallites begins at temperatures below 1000 degree sign C. The RBS results show a clear redistribution of Zn and S after RTA annealing. The concentration of Zn is seriously reduced due to strong diffusion towards deeper regions and the surface, while Ar pre-implantation partially suppressed the c...

Highly sensitive luminescent sensor for cyanide ion detection in aqueous solution based on PEG-coated ZnS nanoparticles.

Science.gov (United States)

Mehta, Surinder K; Salaria, Khushboo; Umar, Ahmad

2013-03-15

Using polyethylene glycol (PEG) coated ZnS nanoparticles (NPs), a novel and highly sensitive luminescent sensor for cyanide ion detection in aqueous solution has been presented. ZnS NPs have been used to develop efficient luminescence sensor which exhibits high reproducibility and stability with the lowest limit of detection of 1.29×10(-6) mol L(-1). The observed limit of detection of the fabricated sensor is ~6 times lower than maximum value of cyanide permitted by United States Environmental Protection Agency for drinking water (7.69×10(-6) mol L(-1)). The interfering studies show that the developed sensor possesses good selectivity for cyanide ion even in presence of other coexisting ions. Importantly, to the best of our knowledge, this is the first report which demonstrates the utilization of PEG- coated ZnS NPs for efficient luminescence sensor for cyanide ion detection in aqueous solution. This work demonstrates that rapidly synthesized ZnS NPs can be used to fabricate efficient luminescence sensor for cyanide ion detection. Copyright © 2013 Elsevier B.V. All rights reserved.

Size dependence of elastic mechanical properties of nanocrystalline aluminum

Energy Technology Data Exchange (ETDEWEB)

Xu, Wenwu; Dávila, Lilian P., E-mail: ldavila@ucmerced.edu

2017-04-24

The effect of grain size on the elastic mechanical properties of nanocrystalline pure metal Al is quantified by molecular dynamics simulation method. In this work, the largest nanocrystalline Al sample has a mean grain size of 29.6 nm and contains over 100 millions atoms in the modeling system. The simulation results show that the elastic properties including elastic modulus and ultimate tensile strength of nanocrystalline Al are relatively insensitive to the variation of mean grain size above 13 nm yet they become distinctly grain size dependent below 13 nm. Moreover, at a grain size <13 nm, the elastic modulus decreases monotonically with decreasing grain size while the ultimate tensile strength of nanocrystalline Al initially decreases with the decrease of the grain size down to 9 nm and then increases with further reduction of grain size. The increase of ultimate tensile strength below 9 nm is believed to be a result of an extended elasticity in the ultrafine grain size nanocrystalline Al. This study can facilitate the prediction of varied mechanical properties for similar nanocrystalline materials and even guide testing and fabrication schemes of such materials.

Enhanced Activity of Nanocrystalline Zeolites for Selective Catalytic Reduction of NOx

International Nuclear Information System (INIS)

Sarah C. Larson; Vicki H. Grassian

2006-01-01

Nanocrystalline zeolites with discrete crystal sizes of less than 100 nm have different properties relative to zeolites with larger crystal sizes. Nanocrystalline zeolites have improved mass transfer properties and very large internal and external surface areas that can be exploited for many different applications. The additional external surface active sites and the improved mass transfer properties of nanocrystalline zeolites offer significant advantages for selective catalytic reduction (SCR) catalysis with ammonia as a reductant in coal-fired power plants relative to current zeolite based SCR catalysts. Nanocrystalline NaY was synthesized with a crystal size of 15-20 nm and was thoroughly characterized using x-ray diffraction, electron paramagnetic resonance spectroscopy, nitrogen adsorption isotherms and Fourier Transform Infrared (FT-IR) spectroscopy. Copper ions were exchanged into nanocrystalline NaY to increase the catalytic activity. The reactions of nitrogen dioxides (NO x ) and ammonia (NH 3 ) on nanocrystalline NaY and CuY were investigated using FT-IR spectroscopy. Significant conversion of NO 2 was observed at room temperature in the presence of NH 3 as monitored by FT-IR spectroscopy. Copper-exchanged nanocrystalline NaY was more active for NO 2 reduction with NH 3 relative to nanocrystalline NaY

Morphogenesis and crystallization of ZnS microspheres by a soft template-assisted hydrothermal route: synthesis, growth mechanism, and oxygen sensitivity.

Science.gov (United States)

Yang, Liangbao; Han, Jun; Luo, Tao; Li, Minqiang; Huang, Jiarui; Meng, Fanli; Liu, Jinhuai

2009-01-05

Almost monodisperse ZnS microspheres have been synthesized on a large scale by a hydrothermal route, in which tungstosilicate acid (TSA) was used as a soft template. By controlling the reaction conditions, such as reaction temperature, pH value of the solutions, and the reaction medium, almost monodisperse microspheres can be synthesized. The structure of these microspheres is sensitive to the reaction conditions. The growth mechanism of these nearly monodisperse microspheres was examined. Oxygen sensing is realized from ZnS microspheres. The current through the ZnS microspheres under UV illumination increases as the oxygen concentration decreases.

Studies of structural and magnetic properties of glass-coated nanocrystalline Fe79Hf7B12Si2 microwires

International Nuclear Information System (INIS)

Garcia, C.; Zhukov, A.; Gonzalez, J.; Zhukova, V.; Varga, R.; Val, J.J. del; Larin, V.; Blanco, J.M.

2006-01-01

In the present work we deal with the fabrication of thin of Fe 79 Hf 7 B 12 Si 2 (low Si content) glass-coated microwire with a nanocrystalline structure and structural and coercivity characterization of such samples which can be considered as a new family of these nanocrystalline materials. Pieces of 10 cm of this microwire were annealed (300-600 deg. C during 1 h). The structural characteristics of the as-cast and annealed samples were determined, at room temperature, by X-ray diffraction (XRD) technique. XRD measurements allow to obtain the evolution of the grain size (15-35 nm) and relative volume fraction (5-60%) of the nanograins as a function of he annealing temperature in the annealed samples. Coercive field (H c ) of the as-cast and annealed samples has been evaluated from the hysteresis loop of the samples obtained by a conventional induction method at 100 Hz. Thermal dependence H c is quite similar to that reported in other nanocrystalline Fe-based alloys. It slightly decreases from the as-cast state (relaxation process) showing small maximum at around 700 K (pre-nucleation of nanograins) decreasing significantly between 773-873 K (exchange coupling of the nanograins)

Reduction of the allotropic transition temperature in nanocrystalline zirconium: Predicted by modified equation of state (MEOS) method and molecular dynamics simulation

Science.gov (United States)

Salati, Amin; Mokhtari, Esmail; Panjepour, Masoud; Aryanpour, Gholamreza

2013-04-01

The temperature at which polymorphic phase transformation occurs in nanocrystalline (NC) materials is different from that of coarse-grained specimens. This anomaly has been related to the role of grain boundary component in these materials and can be predicted by a dilated crystal model. In this study, based on this model, a modified equation of state (MEOS) method (instead of equation of state, EOS, method) is used to calculate the total Gibbs free energy of each phase (β-Zr or α-Zr) in NC Zr. Thereupon, the change in the total Gibbs free energy for β-Zr to α-Zr phase transformation (ΔGβ→α) via the grain size is calculated by this method. Similar to polymorphic transformation in other NC materials (Fe, Nb, Co, TiO2, Al2O3 and ZnS), it is found that the estimated transformation temperature in NC Zr (β→α) is reduced with decreasing grain size. Finally, a molecular dynamics (MD) simulation is employed to confirm the theoretical results.

Wavelet-fractal approach to surface characterization of nanocrystalline ITO thin films

International Nuclear Information System (INIS)

Raoufi, Davood; Kalali, Zahra

2012-01-01

In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500 °C, were investigated by analyzing the surface profile of atomic force microscopy (AFM) images using wavelet transform formalism. The wavelet coefficients related to the thin film surface profiles have been calculated, and then roughness exponent (α) of the films has been estimated using the scalegram method. The results reveal that the surface profiles of the films before and after annealing process have self-affine nature.

Structure and thermal stability of nanocrystalline materials

Indian Academy of Sciences (India)

In addition, study of the thermal stability of nanocrystalline materials against significant grain growth is both scientific and technological interest. A sharp increase in grain size (to micron levels) during consolidation of nanocrystalline powders to obtain fully dense materials may consequently result in the loss of some unique ...

Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

2010-06-01

Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

Processing and characterization of yttrium-stabilized zirconia thin films on polyimide from aqueous polymeric precursors

International Nuclear Information System (INIS)

Gorman, B.P.; Anderson, H.U.

2004-01-01

Low-temperature deposition of dense, nanocrystalline yttrium-stabilized zirconia (YSZ) thin films on polyimide (PI) substrates is illustrated using an aqueous polymeric precursor spin-coating technique. The polymeric precursor uses low-cost materials, is water-soluble and the viscosity and cation concentrations can be easily adjusted in order to vary the film thickness from 0.02 to 0.3 μm. Due to the use of water as the solvent in the YSZ precursor and the hydrophobic nature of the PI surface, surface modification processes were utilized in order to improve the wetting characteristics. Surface modification of PI substrates using wet chemical and oxygen plasma techniques led to a decrease in the precursor contact angle, and ultimately allowed for uniform film formation on both bulk and thin film PI substrates. Scanning electron microscopy, transmission electron microscopy and UV/Vis absorption illustrate that near full-density nanocrystalline thin films of YSZ can be produced at temperatures as low as 350 deg. C. Thermogravimetric analyses illustrate that the PI substrate does not undergo any weight loss up to these temperatures

Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Katsuyuki Okada

2007-01-01

Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

Science.gov (United States)

Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

2018-06-01

In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

Preparation, properties and anticancer effects of mixed As{sub 4}S{sub 4}/ZnS nanoparticles capped by Poloxamer 407

Energy Technology Data Exchange (ETDEWEB)

Bujňáková, Z., E-mail: bujnakova@saske.sk [Institute of Geotechnics, Slovak Academy of Sciences, Watsonova 45, 04001 Košice (Slovakia); Baláž, M. [Institute of Geotechnics, Slovak Academy of Sciences, Watsonova 45, 04001 Košice (Slovakia); Zdurienčíková, M.; Sedlák, J. [Cancer Research Institute, BMC Slovak Academy of Sciences, Dúbravská 9, 84505 Bratislava (Slovakia); Čaplovičová, M. [STU Centre for Nanodiagnostics, Slovak University of Technology, Vazovova 5, 81243 Bratislava (Slovakia); Čaplovič, Ľ. [Faculty of Materials Science and Technology, Slovak University of Technology, Paulínska 16, 91724 Trnava (Slovakia); Dutková, E.; Zorkovská, A.; Turianicová, E.; Baláž, P. [Institute of Geotechnics, Slovak Academy of Sciences, Watsonova 45, 04001 Košice (Slovakia); Shpotyuk, O. [Scientific Research Company “Carat”, Stryjska 202, 79031 Lviv (Ukraine); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15., 42200 Czestochowa (Poland); and others

2017-02-01

Arsenic sulfide compounds have a long history of application in a traditional medicine. In recent years, realgar has been studied as a promising drug in cancer treatment. In this study, the arsenic sulfide (As{sub 4}S{sub 4}) nanoparticles combined with zinc sulfide (ZnS) ones in different molar ratio have been prepared by a simple mechanochemical route in a planetary mill. The successful synthesis and structural properties were confirmed and followed via X-ray diffraction and high-resolution transmission electron microscopy measurements. The morphology of the particles was studied via scanning electron microscopy and transmission electron microscopy methods and the presence of nanocrystallites was verified. For biological tests, the prepared As{sub 4}S{sub 4}/ZnS nanoparticles were further milled in a circulation mill in a water solution of Poloxamer 407 (0.5 wt%), in order to cover the particles with this biocompatible copolymer and to obtain stable nanosuspensions with unimodal distribution. The average size of the particles in the nanosuspensions (~ 120 nm) was determined by photon cross-correlation spectroscopy method. Stability of the nanosuspensions was determined via particle size distribution and zeta potential measurements, confirming no physico-chemical changes for several months. Interestingly, with the increasing amount of ZnS in the sample, the stability was improved. The anti-cancer effects were tested on two melanoma cell lines, A375 and Bowes, with promising results, confirming increased efficiency of the samples containing both As{sub 4}S{sub 4} and ZnS nanocrystals. - Highlights: • Mixed As{sub 4}S{sub 4}/ZnS nanoparticles were prepared by dry milling in the first stage • Stable nanosuspensions of As{sub 4}S{sub 4}/ZnS nanoparticles capped by Poloxamer 407 were prepared by wet milling in the second stage • ZnS in the samples is beneficial: higher values of S{sub A}, stability, solubility and anticancer activity were improved.

First principles results of structural and electronic properties of ZnS ...

Indian Academy of Sciences (India)

We present results of the study of ZnnSn (1 ≤ n ≤ 9) clusters, using the density functional formalism and projector ... HOMO–LUMO gap for ZnS nanoclusters can be tuned .... To determine stability of the clusters with respect to addition.

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

International Nuclear Information System (INIS)

Edge, L.F.; Schlom, D.G.; Stemmer, S.; Lucovsky, G.; Luning, J.

2006-01-01

Nanocrystallinity has been detected in the X-ray absorption spectra of transition metal and rare-earth oxides by (i) removal of d-state degeneracies in the (a) Ti and Sc L 3 spectra of TiO 2 and LaScO 3 , respectively, and (b) O K 1 spectra of Zr(Hf)O 2 , Y 2 O 3 , LaScO 3 and LaAlO 3 , and by the (ii) detection of the O-atom vacancy in the O K 1 edge ZrO 2 -Y 2 O 3 alloys. Spectroscopic detection is more sensitive than X-ray diffraction with a limit of ∼2 nm as compared to >5 mm. Other example includes detection of ZrO 2 nanocrystallinity in phase-separated Zr(Hf) silicate alloys

Enhanced photocatalytic activity of ZnS nanoparticles loaded with MoS{sub 2} nanoflakes by self-assembly approach

Energy Technology Data Exchange (ETDEWEB)

Vattikuti, S.V. Prabhakar, E-mail: vsvprabu@gmail.com; Byon, Chan, E-mail: cbyon@ynu.ac.kr; Jeon, Sora

2016-12-01

A hybrid consisting of ZnS nanoparticles supported on layered MoS{sub 2}−ZnS was synthesized by a hydrothermal method based on self-assembly technique without using a template. XRD, SEM-EDX, TEM, HR-TEM, TG-DTA, XPS, N{sub 2} adsorption-desorption, and UV–Vis spectroscopies were used to characterize the structural features, morphology, and composition of the MoS{sub 2}–ZnS hybrid. The results show that the MoS{sub 2}–ZnS hybrid is mainly ZnS nanoparticles on layered MoS{sub 2} with a thickness of ca. 5–20 nm. The combination of the MoS{sub 2} and ZnS hybrid structure is beneficial for enhancing the photocatalytic degradation of rhodamine B (RhB) under visible light irradiation. A possible photoreaction mechanism of the MoS{sub 2}–ZnS hybrid in the degradation is proposed. The photoexcited electrons from the ZnS could easily transfer to the conduction band of MoS{sub 2}, thus decreasing the recombination of photoinduced carriers and enabling the degradation of RhB under visible light irradiation.

A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

NARCIS (Netherlands)

Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

2016-01-01

A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

Covalently bonded disordered thin-film materials. Materials Research Society symposium proceedings Volume 498

International Nuclear Information System (INIS)

Siegal, M.P.; Milne, W.I.; Jaskie, J.E.

1998-01-01

The current and potential impact of covalently bonded disordered thin films is enormous. These materials are amorphous-to-nanocrystalline structures made from light atomic weight elements from the first row of the periodic table. Examples include amorphous tetrahedral diamond-like carbon, boron nitride, carbon nitride, boron carbide, and boron-carbon-nitride. These materials are under development for use as novel low-power, high-visibility elements in flat-panel display technologies, cold-cathode sources for microsensors and vacuum microelectronics, encapsulants for both environmental protection and microelectronics, optical coatings for laser windows, and ultra-hard tribological coatings. researchers from 17 countries and a broad range of academic institutions, national laboratories and industrial organizations come together in this volume to report on the status of key areas and recent discoveries. More specifically, the volume is organized into five sections. The first four highlight ongoing work primarily in the area of amorphous/nanocrystalline (disordered) carbon thin films; theoretical and experimental structural characterization; electrical and optical characterizations; growth methods; and cold-cathode electron emission results. The fifth section describes the growth, characterization and application of boron- and carbon-nitride thin films

Enhancement of gas sensor response of nanocrystalline zinc oxide for ammonia by plasma treatment

International Nuclear Information System (INIS)

Hou, Yue; Jayatissa, Ahalapitiya H.

2014-01-01

The effect of oxygen plasma treatment on nanocrystalline ZnO thin film based gas sensor was investigated. ZnO thin films were synthesized on alkali-free glass substrates by a sol–gel process. ZnO thin films were treated with oxygen plasma to change the number of vacancies/defects in ZnO. The effect of oxygen plasma on the structural, electrical, optical and gas sensing properties was investigated as a function of plasma treatment time. The results suggest that the microstructure and the surface morphology can be tuned by oxygen plasma treatment. The optical transmission in the visible range varies after the oxygen plasma treatment. Moreover, it is found that the oxygen plasma has significant impact on the electrical properties of ZnO thin films indicating a variation of resistivity. The oxygen plasma treated ZnO thin film exhibits an enhanced sensing response towards NH 3 in comparison with that of the as-deposited ZnO sensor. When compared with the as-deposited ZnO film, the sensing response was improved by 50% for the optimum oxygen plasma treatment time of 8 min. The selectivity of 8 min plasma treated ZnO sensor was also examined for an important industrial gas mixture of H 2 , CH 4 and NH 3 .

Preparation and Characterization of ZnS, CdS and HgS/Poly(methyl methacrylate Nanocomposites

Directory of Open Access Journals (Sweden)

Johannes Z. Mbese

2014-09-01

Full Text Available The synthesis and characterization of ZnS/PMMA (poly(methyl methacrylate, CdS/PMMA and HgS/PMMA nanocomposites are presented. Hexadecylamine (HDA-capped ZnS, CdS and HgS nanoparticles were synthesized using dithiocarbamate single molecule precursors at 180 °C. FTIR (Fourier transform infrared spectroscopy spectra measurement confirmed the dispersion of the metal sulfide nanoparticles in the PMMA matrices to form the metal sulfides/PMMA nanocomposites. Powder X-ray diffraction confirmed the presence of the amorphous PMMA in the nanocomposites. The ZnS and HgS particles were indexed to the cubic phase, while the HgS particles correspond to the hexagonal phase. Thermogravimetric analyses showed that the metal sulfide nanocomposites are thermally more stable than their corresponding precursor complexes. The TEM (Transmission electron microscope analyses revealed that the ZnS nanoparticles have a particle size of 3–5 nm; the crystallite size of the CdS nanoparticles is 6–12 nm, and HgS nanoparticles are 6–12 nm.

Zinc Sulfide Buffer Layer for CIGS Solar Cells Prepared by Chemical Bath Deposition

Directory of Open Access Journals (Sweden)

Rui-Wei You

2016-11-01

Full Text Available In this study, ZnS thin films were successfully synthesized by chemical bath deposition (CBD with starting materials of NH2-NH2, SC(NH22, and ZnSO4‧7H2O. ZnS thin films were deposited with different time on glass substrates by CBD at 80oC and pH=9. Based on X-ray diffraction (XRD patterns, it is found that the ZnS thin films exhibit cubic polycrystalline phase. It was found that the optimum deposition time is 90 min for preparing ZnS thin film that is suitable as buffer layer for CuIn1-xGaxSe2 solar cells. The thin film deposited for 90 min has high transmittance up to 80% in the spectra range from 350 nm to 800 nm, and the optical band gap is about 3.59 eV.

Enhanced solar cell efficiency and stability using ZnS passivation layer for CdS quantum-dot sensitized actinomorphic hexagonal columnar ZnO

International Nuclear Information System (INIS)

Chen, Yanli; Tao, Qiang; Fu, Wuyou; Yang, Haibin; Zhou, Xiaoming; Zhang, Yanyan; Su, Shi; Wang, Peng; Li, Minghui

2014-01-01

Highlights: • The synthetic of ZnS/CdS QDs/AHC-ZnO photoanode with a simple method. • The power conversion efficiency of the ZnS/CdS QDs/AHC-ZnO is 1.81%. • The effects of photovoltaic performances caused by CdS and ZnS amounts were studied. • ZnS passivation layer enhanced electron lifetime significantly. - Abstract: We report the photoanodes consisting of CdS quantum-dots (QDs) sensitized actinomorphic hexagonal columnar ZnO (CdS QDs/AHC-ZnO) with ZnS passivation layer are applied for solar cells. Simple chemical solution synthesized AHC-ZnO films on transparent conducting glass substrates, and then, AHC-ZnO is functionalized with uniform CdS and ZnS QDs via successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by XRD, SEM, TEM, UV–vis diffused reflectance absorption spectra and photovoltaic performances analysis. Photovoltaic performances results indicate the quantity of CdS QDs as well as the visible light absorption threshold can be effectively controlled by varying the coating cycles during the SILAR process, and the photocurrent density (Jsc) is greatly improved by increasing the amount of ZnS. By optimizing the AHC-ZnO with the amount of CdS and ZnS, the best efficiency of 1.81% was achieved for solar cell under AM 1.5 G illumination with Jsc = 7.44 mA/cm 2 , Voc = 0.57 V and FF = 43%

Preparation and study of thickness dependent electrical ...

Indian Academy of Sciences (India)

Unknown

there are only a few reports on ZnS by CBD where the main objective is the study of ZnxCd1–xS thin films (Padam et al 1988; Lokhande 1991). Chemical deposition of ZnS thin films has been reported earlier using different zinc ion releasing sources such as zinc sulphate, zinc chloride etc. In the present case, ZnS films ...

Electron-diffraction and spectroscopical characterisation of ultrathin ZnS films grown by molecular beam epitaxy on GaP(0 0 1)

International Nuclear Information System (INIS)

Zhang, L.; Szargan, R.; Chasse, T.

2004-01-01

ZnS films were grown by molecular beam epitaxy employing a single compound effusion cell on GaP(0 0 1) substrate at different temperatures, and characterised by means of low energy electron diffraction, X-ray and ultra-violet photoelectron spectroscopy, angle-resolved ultra-violet photoelectron spectroscopy and X-ray emission spectroscopy. The GaP(0 0 1) substrate exhibits a (4x2) reconstruction after Ar ion sputtering and annealing at 370 deg. C. Crystal quality of the ZnS films depends on both film thickness and growth temperature. Thinner films grown at higher temperatures and thicker films grown at lower temperatures have better crystal quality. The layer-by-layer growth mode of the ZnS films at lower (25, 80 and 100 deg. C) temperatures changes to layer-by-layer-plus-island mode at higher temperatures (120, 150 and 180 deg. C). A chemical reaction takes place and is confined to the interface. The valence band offset of the ZnS-GaP heterojunction was determined to be 0.8±0.1 eV. Sulphur L 2,3 emission spectra of ZnS powder raw material and the epitaxial ZnS films display the same features, regardless of the existence of the Ga-S bonding in the film samples

Bimodal microstructure and deformation of cryomilled bulk nanocrystalline Al-7.5Mg alloy

International Nuclear Information System (INIS)

Lee, Z.; Witkin, D.B.; Radmilovic, V.; Lavernia, E.J.; Nutt, S.R.

2005-01-01

The microstructure, mechanical properties and deformation response of bimodal structured nanocrystalline Al-7.5Mg alloy were investigated. Grain refinement was achieved by cryomilling of atomized Al-7.5Mg powders, and then cryomilled nanocrystalline powders blended with 15 and 30% unmilled coarse-grained powders were consolidated by hot isostatic pressing followed by extrusion to produce bulk nanocrystalline alloys. Bimodal bulk nanocrystalline Al-7.5Mg alloys, which were comprised of nanocrystalline grains separated by coarse-grain regions, show balanced mechanical properties of enhanced yield and ultimate strength and reasonable ductility and toughness compared to comparable conventional alloys and nanocrystalline metals. The investigation of tensile and hardness test suggests unusual deformation mechanisms and interactions between ductile coarse-grain bands and nanocrystalline regions

Infrared absorption study of hydrogen incorporation in thick nanocrystalline diamond films

International Nuclear Information System (INIS)

Tang, C.J.; Neves, A.J.; Carmo, M.C.

2005-01-01

We present an infrared (IR) optical absorbance study of hydrogen incorporation in nanocrystalline diamond films. The thick nanocrystalline diamond films were synthesized by microwave plasma-assisted chemical vapor deposition and a high growth rate about 3.0 μm/h was achieved. The morphology, phase quality, and hydrogen incorporation were assessed by means of scanning electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Large amount of hydrogen bonded to nanocrystalline diamond is clearly evidenced by the huge CH stretching band in the FTIR spectrum. The mechanism of hydrogen incorporation is discussed in light of the growth mechanism of nanocrystalline diamond. This suggests the potential of nanocrystalline diamond for IR electro-optical device applications

Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

First principles results of structural and electronic properties of ZnS

Indian Academy of Sciences (India)

We present results of the study of ZnS (1 ≤ ≤ 9) clusters, using the density functional formalism and projector augmented wave method within the generalized gradient approximation. Along with the structural and electronic properties, nature of bonding and overall stability of clusters has been studied.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Electron lucky-drift impact ionization coefficients of ZnS : Mn

Indian Academy of Sciences (India)

can also be used to calculate the impact ionization coefficients of high electron energy of. ZnS:Mn without ... Electroluminescent devices (ZnS:Mn) recently are of great interest in industry as well as in information technology [1–4]. Understanding .... data in the case of electron in ZnS from two sources, which were reported by.

Insights into Comparative Antimicrobial Efficacies of Synthetic and Organic Agents: The Case of ZnS Nanoparticles and Zingiber officinale Rosc.

Science.gov (United States)

Obidi, O. F.; Nejo, A. O.; Ayeni, R. A.; Revaprasadu, N.

2018-03-01

The differences among the antimicrobial activities of synthetic nanoparticles (NPs), organic agents and conventional antibiotics against human pathogens are little known. We compared the antimicrobial activities of aqueous, ethanol and ethyl acetate extracts of Zingiber officinale rhizomes with ZnS NPs and tetracycline/nystatin using agar-diffusion techniques. Transmission electron microscopy (TEM), Fourier transform infrared (FTIR) and ultraviolet spectroscopy were used to characterize ZnS NPs. At 100 mg/ml, ethanol and ethyl acetate extract inhibited Acinetobacter baumannii, Salmonella typhimurium, Enterococcus faecium, Shigella flexneri, Klebsiella pneumoniae, Staphylococcus epidermidis and Candida albicans with zones of inhibition (ZOI) ranging between 0-42 mm and 0-39 mm, respectively. Candida albicans had a remarkable ZOI of 42 mm and 22 mm from ethanol and ZnS NPs compared with 20 mm from conventional nystatin. TEM and FTIR revealed spherically shaped polydispersed NPs with particle size of 12.5 nm and the role of banana peel extracts in ZnS NPs synthesis. Organic and synthetic NPs proved potential alternatives to conventional antimicrobial agents.

Insights into Comparative Antimicrobial Efficacies of Synthetic and Organic Agents: The Case of ZnS Nanoparticles and Zingiber officinale Rosc.

Science.gov (United States)

Obidi, O. F.; Nejo, A. O.; Ayeni, R. A.; Revaprasadu, N.

2018-06-01

The differences among the antimicrobial activities of synthetic nanoparticles (NPs), organic agents and conventional antibiotics against human pathogens are little known. We compared the antimicrobial activities of aqueous, ethanol and ethyl acetate extracts of Zingiber officinale rhizomes with ZnS NPs and tetracycline/nystatin using agar-diffusion techniques. Transmission electron microscopy (TEM), Fourier transform infrared (FTIR) and ultraviolet spectroscopy were used to characterize ZnS NPs. At 100 mg/ml, ethanol and ethyl acetate extract inhibited Acinetobacter baumannii, Salmonella typhimurium, Enterococcus faecium, Shigella flexneri, Klebsiella pneumoniae, Staphylococcus epidermidis and Candida albicans with zones of inhibition (ZOI) ranging between 0-42 mm and 0-39 mm, respectively. Candida albicans had a remarkable ZOI of 42 mm and 22 mm from ethanol and ZnS NPs compared with 20 mm from conventional nystatin. TEM and FTIR revealed spherically shaped polydispersed NPs with particle size of 12.5 nm and the role of banana peel extracts in ZnS NPs synthesis. Organic and synthetic NPs proved potential alternatives to conventional antimicrobial agents.

Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

International Nuclear Information System (INIS)

Govindaraju, N.; Singh, R.N.

2011-01-01

Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

Visible Light-Induced Degradation of Methylene Blue in the Presence of Photocatalytic ZnS and CdS Nanoparticles

Directory of Open Access Journals (Sweden)

Parisa Vaziri

2012-09-01

Full Text Available ZnS and CdS nanoparticles were prepared by a simple microwave irradiation method under mild conditions. The obtained nanoparticles were characterized by XRD, TEM and EDX. The results indicated that high purity of nanosized ZnS and CdS was successfully obtained with cubic and hexagonal crystalline structures, respectively. The band gap energies of ZnS and CdS nanoparticles were estimated using UV-visible absorption spectra to be about 4.22 and 2.64 eV, respectively. Photocatalytic degradation of methylene blue was carried out using physical mixtures of ZnS and CdS nanoparticles under a 500-W halogen lamp of visible light irradiation. The residual concentration of methylene blue solution was monitored using UV-visible absorption spectrometry. From the study of the variation in composition of ZnS:CdS, a composition of 1:4 (by weight was found to be very efficient for degradation of methylene blue. In this case the degradation efficiency of the photocatalyst nanoparticles after 6 h irradiation time was about 73% with a reaction rate of 3.61 × 10−3 min−1. Higher degradation efficiency and reaction rate were achieved by increasing the amount of photocatalyst and initial pH of the solution.

Theoretical analysis of thermoelectric power of nanocrystalline ReSi2 thin film

International Nuclear Information System (INIS)

Kchoudhary, K; Kaurav; Gupta, N; Varshney, D

2007-01-01

The formulation is developed for the predictive modeling of thermoelectric power (S) of nano-crystalline ReSi 2 . We have evaluated the phonon thermoelectric power by incorporating the scattering of phonons with impurities, grain boundaries, charge careers and phonons. It is noticed that at low temperatures (T < 400 K), S increases and show power temperature dependence because of the larger mean free path of phonon, S shows a broad peak at about 550 K, which is artefact of the competition among umklapp scattering and grain boundaries scattering. Further, by increasing temperature S decreases with change in slope. The anomalies are well accounted in terms of interaction among the phonons-impurity, phonon grain boundaries and the umklapp scattering. Under certain conditions grain boundary scattering is expected to be more effective on heat carrying phonons than on Umklapp scattering, causing an increased thermoelectric power. Numerical analysis of thermoelectric power from the present model shows similar results as those revealed from experiments

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

Energy Technology Data Exchange (ETDEWEB)

Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

2016-01-15

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

The effect of water molecules on the thiol collector interaction on the galena (PbS) and sphalerite (ZnS) surfaces: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Long, Xianhao [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Chen, Ye, E-mail: fby18@126.com [College of Resources and Metallurgy, Guangxi University, Nanning 530004 (China); Chen, Jianhua, E-mail: jhchen@gxu.edu.cn [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); College of Resources and Metallurgy, Guangxi University, Nanning 530004 (China); Xu, Zhenghe; Liu, Qingxia [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB T6G 2V4 (Canada); Du, Zheng [National Supercomputing Center in Shenzhen, Shenzhen 518055 (China)

2016-12-15

Highlights: • Water adsorption has a greater effect on the electron distribution of ZnS surface than PbS surface. • Water adsorption decreases the reactivity of ZnS surface atoms but improves that of PbS. • Thiol collectors cannot interact with the hydrated ZnS surface. • The hydration has little influence on the interaction of thiol collectors with PbS surface. - Abstracts: In froth flotation the molecular interaction between reagents and mineral surfaces take place at the solid liquid interface. In this paper, the effect of water molecule on the three typical thiol collectors (xanthate, dithiocarbomate and dithiophosphate) interactions at the galena (PbS) and sphalerite (ZnS) surfaces has been studied adopting density functional theory (DFT). The results suggests that the presence of water molecule shows a greater influence on the electron distribution of ZnS surface than PbS surface, and reduce the reactivity of ZnS surface atoms but improves the reactivity of PbS surface atoms during the reaction with xanthate. Water adsorption could also reduce the covalent binding between Zn and S atoms but have little influence on Pb-S bond. In the presence of water, xanthate, dithiocarbomate (DTC) and dithiophosphate (DTP) could not adsorb on the sphalerite surface. And for galena (PbS) surface, the interaction of DTP is the strongest, then the DTC and the interaction of xanthate is the weakest. These results agree well with the flotation practice.

Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

Directory of Open Access Journals (Sweden)

Haridas D. Dhaygude

2016-03-01

Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

Directory of Open Access Journals (Sweden)

Gábor Y. Molnár

2016-03-01

Full Text Available Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd. It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself.

A facile and fast approach for the synthesis of doped nanoparticles using a microfluidic device

International Nuclear Information System (INIS)

Singh, Akanksha; Limaye, Mukta; Singh, Shashi; Kulkarni, Sulabha; Lalla, Niranjan Prasad; Malek, Chantal Khan

2008-01-01

The microfluidic approach emerges as a new and promising technology for the synthesis of nanomaterials. A microreactor allows a variety of reaction conditions to be quickly scanned without consuming large amounts of raw material. In this study, we investigated the synthesis of water soluble 1-thioglycerol-capped Mn-doped ZnS nanocrystalline semiconductor nanoparticles (TG-capped ZnS:Mn) via a microfluidic approach. This is the first report for the successful doping of Mn in a ZnS semiconductor at room temperature as well as at 80 deg. C using a microreactor. Transmission electron microscopy and x-ray diffraction analysis show that the average particle size of Mn-doped ZnS nanoparticles is ∼3.0 nm with a zinc-blende structure. Photoluminescence, x-ray photoelectron spectroscopy, atomic absorption spectroscopy and electron paramagnetic resonance studies were carried out to confirm that the Mn 2+ dopants are present in the ZnS nanoparticles

The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

International Nuclear Information System (INIS)

Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

2007-01-01

Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thin Co films with tunable ferromagnetic resonance frequency

International Nuclear Information System (INIS)

Maklakov, Sergey S.; Maklakov, Sergey A.; Ryzhikov, Ilya A.; Rozanov, Konstantin N.; Osipov, Alexey V.

2012-01-01

The tailored production of thin Co films of 50 nm thick with ferromagnetic resonance frequency in a range from 2.9 to 7.3 GHz using the DC magnetron sputtering is reported. The ferromagnetic resonance frequency, coercivity, effective magnetic field and nanocrystalline structure parameters are shown to be governed by the Co deposition rate. For this investigation, FMR, VSM and TEM techniques were used. - Highlights: ► Thin Co films with FMR frequency in a range from 2.9 to 7.3 GHz are obtained. ► The films' properties are governed by the deposition rate during DC magnetron sputtering. ► FMR, VSM and TEM techniques were used during the study.

Nanocrystalline permanent magnets with enhanced properties

International Nuclear Information System (INIS)

Leonowicz, M.

2002-01-01

Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (∼ 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

Thermodynamic and experimental study on phase stability in nanocrystalline alloys

International Nuclear Information System (INIS)

Xu Wenwu; Song Xiaoyan; Lu Nianduan; Huang Chuan

2010-01-01

Nanocrystalline alloys exhibit apparently different phase transformation characteristics in comparison to the conventional polycrystalline alloys. The special phase stability and phase transformation behavior, as well as the essential mechanisms of the nanocrystalline alloys, were described quantitatively in a nanothermodynamic point of view. By introducing the relationship between the excess volume at the grain boundary and the nanograin size, the Gibbs free energy was determined distinctly as a function of temperature and the nanograin size. Accordingly, the grain-size-dependence of the phase stability and phase transformation characteristics of the nanocrystalline alloy were calculated systematically, and the correlations between the phase constitution, the phase transformation temperature and the critical nanograin size were predicted. A series of experiments was performed to investigate the phase transformations at room temperature and high temperatures using the nanocrystalline Sm 2 Co 17 alloy as an example. The phase constitution and phase transformation sequence found in nanocrystalline Sm 2 Co 17 alloys with various grain-size levels agree well with the calculations by the nanothermodynamic model.

Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

International Nuclear Information System (INIS)

Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

2005-01-01

Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

Relaxation mechanisms in a gold thin film on a compliant substrate as revealed by X-ray diffraction

Science.gov (United States)

Godard, Pierre; Renault, Pierre-Olivier; Faurie, Damien; Thiaudière, Dominique

2017-05-01

The fact that the polymeric substrate does not relax after a load jump allows realizing an original relaxation experiment of a metallic thin film. Thanks to the combination of two strain probes done at different scales, namely, X-ray synchrotron diffraction and digital image correlation techniques, the apparent activation volumes are monitored and their values help to capture leading deformation mechanisms in thin films. Such experiments have been performed on a nanocrystalline gold thin film, and deformation mechanisms involved during a biaxial straining have been distinguished between different texture components.

Electrodeposited semiconductors at room temperature: an X-ray Absorption Spectroscopy study of Cu-, Zn-, S-bearing thin films

International Nuclear Information System (INIS)

Di Benedetto, Francesco; Cinotti, Serena; D’Acapito, Francesco; Vizza, Francesco; Foresti, Maria Luisa; Guerri, Annalisa; Lavacchi, Alessandro; Montegrossi, Giordano; Romanelli, Maurizio; Cioffi, Nicola; Innocenti, Massimo

2015-01-01

A SEM, DRS and XAS study was carried out on ultra-thin films with chemical composition belonging to the Cu-Zn-S ternary system, related to the kesterite-type materials, in the light of their potential application to thin film photovoltaic technology. The films, realized through the layer-by-layer E-ALD electrochemical technique, reveal variable phase composition as a function of the applied E-ALD sequence. In particular, by increasing the Zn cycles per Cu cycle from 1:1 to 9:1, the number of detected phases changes from 3 to 2. In all samples, Cu mainly crystallize in a Cu_2S type phase, whereas Zn occurs as ZnS. In the 1:1 sample, additional ZnO is detected. The variable phase composition parallels apparent changes in the sample morphology. In all samples, a sulphide thin film is covered by a net of elongated nanostructures, the length of which decreases with increasing the number of Zn cycles per Cu cycle. All these evidences are interpreted as due to the operating electrochemical route during the synthesis and confirm the lack of miscibility between Cu_2S and ZnS, thermodynamically relevant after the E-ALD has stopped. The band gap values exhibited by the three films, modulated by changing the copper:zinc ratio, progressively approach a value useful for solar energy conversion, thus strongly proposing these new sulfide nanomaterials for photovoltaics and photochemical applications.

Energy transfer in aggregated CuInS2/ZnS core-shell quantum dots deposited as solid films

International Nuclear Information System (INIS)

Gardelis, S; Georgiadou, D; Travlos, A; Nassiopoulou, A G; Fakis, M; Droseros, N

2017-01-01

We report on the morphology and optical properties of CuInS 2 /ZnS core-shell quantum dots in solid films by means of AFM, SEM, HRTEM, steady state and time-resolved photoluminescence (PL) spectroscopy. The amount of aggregation of the CuInS 2 /ZnS QDs was controlled by changing the preparation conditions of the films. A red-shift of the PL spectrum of CuInS 2 /ZnS core-shell quantum dots, deposited as solid films on silicon substrates, is observed upon increasing the amount of aggregation. The presence of larger aggregates was found to lead to a larger PL red-shift. Besides, as the degree of aggregation increased, the PL decay became slower. We attribute the observed PL red-shift to energy transfer from the smaller to the larger dots within the aggregates, with the emission being realized via a long decay recombination mechanism (100–200 ns), the origin of which is discussed. (paper)

Structural and optical properties of Mg doped ZnS quantum dots and biological applications

Science.gov (United States)

Ashokkumar, M.; Boopathyraja, A.

2018-01-01

Zn1-xMgxS (x = 0, 0.2 and 0.4) quantum dots (QDs) were prepared by co-precipitation method. The Mg dopant did not modify the cubic blende structure of ZnS QDs. The Mg related secondary phase was not detected even for 40% of Mg doping. The size mismatch between host Zn ion and dopant Mg ion created distortion around the dopant. The creation of distortion centres produced small changes in the lattice parameters and diffraction peak position. All the QDs showed small sulfur deficiency and the deficiency level were increased by Mg doping. Band gap of the QD was decreased due to the dominated quantum confinement effect over compositional effect at initial doping of Mg. But at higher doping the band gap was increased due to compositional effect, since there was no change in average crystallite size. The prepared QDs had three emission bands in the UV and Visible regions corresponding to near band edge emission and defect related emissions. The electron transport reaction chain which forms free radicals was broken by sulfur vacancy trap sites. Therefore, the ZnS QDs had better antioxidant activity and the antioxidant behaviour was enhanced by Mg doping. The enhanced UV absorption and emission of 20% of Mg doped ZnS QDs let to maximize the zone of inhibition against E. Coli bacterial strain.

Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

Energy Technology Data Exchange (ETDEWEB)

Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

2008-02-15

Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

Pulsed laser-deposited nanocrystalline GdB{sub 6} thin films on W and Re as field emitters

Energy Technology Data Exchange (ETDEWEB)

Suryawanshi, Sachin R.; More, Mahendra A. [Savitribai Phule Pune University, Department of Physics, Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Pune (India); Singh, Anil K.; Sinha, Sucharita [Bhabha Atomic Research Centre, Laser and Plasma Technology Division, Trombay, Mumbai (India); Phase, Deodatta M. [UGC-DAE Consortium for Scientific Research Indore Centre, Indore (India); Late, Dattatray J. [CSIR-National Chemical Laboratory, Physical and Materials Chemistry Division, Pune (India)

2016-10-15

Gadolinium hexaboride (GdB{sub 6}) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB{sub 6} on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB{sub 6}/W and GdB{sub 6}/Re emitters were performed in a planar diode configuration at the base pressure ∝10{sup -8} mbar. The GdB{sub 6}/W and GdB{sub 6}/Re tip emitters deliver high emission current densities of ∝1.4 and 0.811 mA/cm{sup 2} at an applied field of ∝6.0 and 7.0 V/μm, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F-N plots indicate that the PLD GdB{sub 6} coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB{sub 6}/W and GdB{sub 6}/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB{sub 6}/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ∝1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB{sub 6}/W emitter are markedly different from that of GdB{sub 6}/Re emitter, which can be attributed to the growth of GdB{sub 6} films on W and Re substrates. (orig.)

Preparation of SDC electrolyte thin films on dense and porous substrates by modified sol-gel route

International Nuclear Information System (INIS)

Lin Hongfei; Ding, Changsheng; Sato, Kazuhisa; Tsutai, Yoshifumi; Ohtaki, Hiromichi; Iguchi, Mabito; Wada, Chiharu; Hashida, Toshiyuki

2008-01-01

Nanocrystalline fluorite type samarium doped ceria (SDC) electrolyte thin film for intermediate temperature-solid oxide fuel cells (IT-SOFCs) application were prepared on the dense and porous substrates at low temperatures of 573-1373 K using a novel citrate sol-gel route combined with a sol suspension spray coating technique. Thermogravimetric analysis showed that the decomposition of the citrate gel film and the initial crystallization of the SDC occurred at a low temperature of about 590 K. XRD examination revealed that the annealing of the green film at temperatures of 573-1373 K provided cubic nanocrystalline SDC phase. The crystallite sizes were in the range of 9-19 nm. Microscopic observations indicated that the derived film was homogeneous, dense and crack-free without pinholes. The desired thickness for preparation of thin electrolyte films from hundreds of nm to several μm should be controllable and feasible by repeating the simple and inexpensive citrate sol-gel spray coating process

Anomalous behavior of B1g mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO thin films

Directory of Open Access Journals (Sweden)

Subodh K. Gautam

2015-12-01

Full Text Available The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO2 lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb+5 in the TiO2 lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR spectra of films with small size crystallites shows stiffening of about 4 cm−1 for the Eg(1 mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B1g mode exhibits a large anomalous softening of 20 cm−1 with asymmetrical broadening; which was not reported for the case of pure TiO2 crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb5+ doping induced reduction of Ti4+ ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

Optical properties of template synthesized nanowalled ZnS microtubules

Science.gov (United States)

Kumar, Rajesh; Chakarvarti, S. K.

2007-12-01

Electrodeposition is a versatile technique combining low processing cost with ambient conditions that can be used to prepare metallic, polymeric and semiconducting nano/micro structures. In the present work, track-etch membranes (TEMs) of makrofol (KG) have been used as templates for synthesis of ZnS nanowalled microtubules using electrodeposition technique. The morphology of the microtubules was characterized by scanning electron microscopy. Size effects on the band gap of tubules have also been studied by UV-visible spectrophotometer.

Structural properties of calcogenic thin films and alloys subjected to synchrotron light

International Nuclear Information System (INIS)

Moura, P.R.; Almeida, D.P.; Lima, J.C. de; Campos, C.E.M.; Ponciano, C.R.

2009-01-01

Results on structural characterization of Sb 50 Te 50 and Te 24 In 38 Sb 38 alloys prepared as powder and after deposited as a thin films are presented. For that x ray diffraction and energy dispersive X-ray fluorescence were used. The nanocrystalline phases Sb 2 Te 2 and Sb 24 Te 9 were nucleated in both Sb 50 Te 50 and Te 24 In 38 Sb 38 alloys, respectively. The thin films of both binary and ternary alloys are mainly amorphous. According to X-ray fluorescence results the chemical composition inside the ultraviolet irradiated region on one of the binary thin film become different than that outside irradiation marks, suggesting Sb migration. (author)

Tailoring and patterning the grain size of nanocrystalline alloys

International Nuclear Information System (INIS)

Detor, Andrew J.; Schuh, Christopher A.

2007-01-01

Nanocrystalline alloys that exhibit grain boundary segregation can access thermodynamically stable or metastable states with the average grain size dictated by the alloying addition. Here we consider nanocrystalline Ni-W alloys and demonstrate that the W content controls the grain size over a very broad range: ∼2-140 nm as compared with ∼2-20 nm in previous work on strongly segregating systems. This trend is attributed to a relatively weak tendency for W segregation to the grain boundaries. Based upon this observation, we introduce a new synthesis technique allowing for precise composition control during the electrodeposition of Ni-W alloys, which, in turn, leads to precise control of the nanocrystalline grain size. This technique offers new possibilities for understanding the structure-property relationships of nanocrystalline solids, such as the breakdown of Hall-Petch strength scaling, and also opens the door to a new class of customizable materials incorporating patterned nanostructures

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Energy Technology Data Exchange (ETDEWEB)

Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

2015-03-09

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

Hydrogen content and density in nanocrystalline carbon films of a predominant diamond character

International Nuclear Information System (INIS)

Hoffman, A.; Heiman, A.; Akhvlediani, R.; Lakin, E.; Zolotoyabko, E.; Cyterman, C.

2003-01-01

Nanocrystalline carbon films possessing a prevailing diamond or graphite character, depending on substrate temperature, can be deposited from a methane hydrogen mixture by the direct current glow discharge plasma chemical vapor deposition method. While at a temperature of ∼880 deg. C, following the formation of a thin precursor graphitic film, diamond nucleation occurs and a nanodiamond film grows, at higher and lower deposition temperatures the films maintain their graphitic character. In this study the hydrogen content, density and nanocrystalline phase composition of films deposited at various temperatures are investigated. We aim to elucidate the role of hydrogen in nanocrystalline films with a predominant diamond character. Secondary ion mass spectroscopy revealed a considerable increase of the hydrogen concentration in the films that accompanies the growth of nanodiamond. It correlates with near edge x-ray adsorption spectroscopy measurements, that showed an appearance of spectroscopic features associated with the diamond structure, and with a substantial increase of the film density detected by x-ray reflectivity. Electron energy loss spectroscopy showed that nanocrystalline diamond films can be deposited from a CH 4 /H 2 mixture with hydrogen concentration in the 80%-95% range. For a deposition temperature of 880 deg. C, the highest diamond character of the films was found for a hydrogen concentration of 91% of H 2 . The deposition temperature plays an important role in diamond formation, strongly influencing the content of adsorbed hydrogen with an optimum at 880 deg. C. It is suggested that diamond nucleation and growth of the nanodiamond phase is driven by densification of the deposited graphitic films which results in high local compressive stresses. Nanodiamond formation is accompanied by an increase of hydrogen concentration in the films. It is suggested that hydrogen retention is critical for stabilization of nanodiamond crystallites. At lower

The role of ion exchange in the passivation of In(Zn)P nanocrystals with ZnS

Science.gov (United States)

Cho, Deok-Yong; Xi, Lifei; Boothroyd, Chris; Kardynal, Beata; Lam, Yeng Ming

2016-03-01

We have investigated the chemical state of In(Zn)P/ZnS core/shell nanocrystals (NCs) for color conversion applications using hard X-ray absorption spectroscopy (XAS) and photoluminescence excitation (PLE). Analyses of the edge energies as well as the X-ray absorption fine structure (XAFS) reveal that the Zn2+ ions from ZnS remain in the shell while the S2- ions penetrate into the core at an early stage of the ZnS deposition. It is further demonstrated that for short growth times, the ZnS shell coverage on the core was incomplete, whereas the coverage improved gradually as the shell deposition time increased. Together with evidence from PLE spectra, where there is a strong indication of the presence of P vacancies, this suggests that the core-shell interface in the In(Zn)P/ZnS NCs are subject to substantial atomic exchanges and detailed models for the shell structure beyond simple layer coverage are needed. This substantial atomic exchange is very likely to be the reason for the improved photoluminescence behavior of the core-shell particles compare to In(Zn)P-only NCs as S can passivate the NCs surfaces.

Using fluorescence measurement of zinc ions liberated from ZnS nanoparticle labels in bioassay for Escherichia coli O157:H7

International Nuclear Information System (INIS)

Cowles, Chad L.; Zhu Xiaoshan; Pai, Chi-Yun

2011-01-01

In this study, an alternative approach using ZnS nanoparticle biolabels as fluorescence signal transducers is reported for the immunoassay of E. coli O157:H7 in tap water samples. Instead of measuring the fluorescence of ZnS nanoparticles in the assay, the fluorescence signal is generated through the binding of zinc ions released from nanoparticle labels with zinc-ion sensitive fluorescence indicator Fluozin-3. In the assay, ZnS nanoparticles around 50 nm in diameter were synthesized, bioconjugated, and applied for the detection of E. coli O157:H7. The assay shows a detection range over two orders of magnitude and a detection limit around 1000 colony-forming units (cfu) of E. coli O157:H7.

Aqueous-phase synthesis and color-tuning of core/shell/shell inorganic nanocrystals consisting of ZnSe, (Cu, Mn)-doped ZnS, and ZnS

Energy Technology Data Exchange (ETDEWEB)

Choi, Jongwan; Yoon, Sujin [Department of Chemistry and Research Institute for Natural Science, Hanyang University, Seoul, 133-791 (Korea, Republic of); Kim, Felix Sunjoo, E-mail: fskim@cau.ac.kr [School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul, 156-756 (Korea, Republic of); Kim, Nakjoong, E-mail: kimnj@hanyang.ac.kr [Department of Chemistry and Research Institute for Natural Science, Hanyang University, Seoul, 133-791 (Korea, Republic of)

2016-06-25

We report synthesis of colloidal nanocrystals based on ZnSe core, (Cu,Mn)-doped ZnS inner-shell, and ZnS outer-shell by using an eco-friendly method and their optical properties. Synthesis of core/shell/shell nanocrystals was performed by using a one-pot/three-step colloidal method with 3-mercaptopropionic acid as a stabilizer in aqueous phase at low temperature. A double-shell structure was employed with inner-shell as a host for doping and outer-shell as a passivation layer for covering surface defects. Copper and manganese were introduced as single- or co-dopants during inner-shell formation, providing an effective means to control the emission color of the nanocrystals. The synthesized nanocrystals showed fluorescent emission ranging from blue to green, to white, and to orange, adjusted by doping components, amounts, and ratios. The photoluminescence quantum yields of the core/doped-shell/shell nanocrystals approached 36%. - Highlights: • ZnSe/ZnS:(Cu,Ms)/ZnS core/(doped)shell/shell nanocrystals were synthesized in an aqueous phase. • Emission color of nanocrystals was controlled from blue to white to orange by adjusting the atomic ratio of Cu and Mn co-dopants. • Photoluminescence quantum yields of the colloidal nanocrystals approached 36%.

In vitro corrosion, cytotoxicity and hemocompatibility of bulk nanocrystalline pure iron

International Nuclear Information System (INIS)

Nie, F L; Zheng, Y F; Wei, S C; Hu, C; Yang, G

2010-01-01

Bulk nanocrystalline pure iron rods were fabricated by the equal channel angular pressure (ECAP) technique up to eight passes. The microstructure and grain size distribution, natural immersion and electrochemical corrosion in simulated body fluid, cellular responses and hemocompatibility were investigated in this study. The results indicate that nanocrystalline pure iron after severe plastic deformation (SPD) would sustain durable span duration and exhibit much stronger corrosion resistance than that of the microcrystalline pure iron. The interaction of different cell lines reveals that the nanocrystalline pure iron stimulates better proliferation of fibroblast cells and preferable promotion of endothelialization, while inhibits effectively the viability of vascular smooth muscle cells (VSMCs). The burst of red cells and adhesion of the platelets were also substantially suppressed on contact with the nanocrystalline pure iron in blood circulation. A clear size-dependent behavior from the grain nature deduced by the gradual refinement microstructures was given and well-behaved in vitro biocompatibility of nanocrystalline pure iron was concluded.

Magnetic properties of nanocrystalline pyrrhotite prepared by high-energy milling

DEFF Research Database (Denmark)

Balaz, P.; Godocikova, E.; Alacova, A.

2004-01-01

The nanocrystalline pyrrhotite was prepared by high-energy milling of lead sulphide with elemental Fe acting as reducing element. X-ray diffractometry, Mossbauer spectroscopy and VSM magnetometry were used to determine the properties of nanocrystalline iron sulphide prepared by the corresponding...... mechanochemical reaction. Pyrrhotite Fe1-xS together with the residual Fe metal were identified by the X-ray diffractometry. The kinetic studies performed by Mossbauer spectroscopy and VSM magnetometry allowed us to follow in more details the progress of the nanocrystalline magnetic phase formation during...

Theoretical study on recoilless fractions of simple cubic monatomic nanocrystalline particles

International Nuclear Information System (INIS)

Huang Jianping; Wang Luya

2002-01-01

Recoilless fractions of simple cubic monatomic nanocrystalline particles are calculated by using displacement-displacement Green's function. The numerical results show that the recoilless fractions on the surface of monatomic nanocrystalline particles are smaller than those in the inner, and they decrease when the particle size increase, the recoilless fractions of whole monatomic nanocrystalline particles increase when the particle size increase. These effects are more evident when the temperature is higher

Synthesis of nanocrystalline fluorinated hydroxyapatite

Indian Academy of Sciences (India)

Fluorinated hydroxyapatite; nanocrystalline; microwave synthesis; dissolution. ... HA by the presence of other ions such as carbonate, magnesium, fluoride, etc. ... Fourier transform infrared spectroscopy (FT–IR) and laser Raman spectroscopy.

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Optical, electrical and solid state properties of nano crystalline zinc ...

African Journals Online (AJOL)

Semiconducting Zinc Sulphide (ZnS) thin films were deposited on glass substrate using relatively simple Chemical Bath Deposition (CBD) technique. Nano crystalline ZnS thin films were fabricated in the study. Optical characterization of the films showed that the materials are transparent to visible light, opaque to ultraviolet ...

Effect of particle size on activation energy and peak temperature of the thermoluminescence glow curve of undoped ZnS nanoparticles.

Science.gov (United States)

Chandra, B P; Chandrakar, Raju Kumar; Chandra, V K; Baghel, R N

2016-03-01

This paper reports the effect of particle size on the thermoluminescence (TL) of undoped ZnS nanoparticles. ZnS nanoparticles were prepared using a chemical precipitation method in which mercaptoethanol was used as the capping agent. The nanoparticles were characterized by X-ray diffraction, field emission gun-scanning electron microscopy and high-resolution transmission electron microscopy. When the concentrations of mercaptoethanol used are 0, 0.005, 0.01, 0.015, 0.025, 0.040 and 0.060 M, the sizes of the nanoparticles are 2.86, 2.81, 2.69, 2.40, 2.10, 1.90 and 1.80 nm, respectively. Initially, the TL intensity of UV-irradiated ZnS nanoparticles increases with temperature, attains a peak value Im for a particular temperature Tm, and then decreases with further increases in temperature. The values of both Im and Tm increase with decreasing nanoparticle size. Whereas the activation energy decreases slightly with decreasing nanoparticle size, the frequency factor decreases significantly as the nanoparticle size is reduced. The order of kinetics for the TL glow curve of ZnS nanoparticles is 2. Expressions are derived for the dependence of activation energy (Ea) and Tm on nanoparticle size, and good agreement is found between the experimental and theoretical results. Copyright © 2015 John Wiley & Sons, Ltd.

Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

Science.gov (United States)

Kihara, Takashi; Harada, Toshihiro; Kato, Masahiro; Nakano, Kiyoshi; Murakami, Osamu; Kikusui, Takefumi; Koshida, Nobuyoshi

2006-01-01

As one of the functional properties of ultrasound generator based on efficient thermal transfer at the nanocrystalline silicon (nc-Si) layer surface, its potential as an ultrasonic simulator of vocalization signals is demonstrated by using the acoustic data of mouse-pup calls. The device composed of a surface-heating thin-film electrode, an nc-Si layer, and a single-crystalline silicon (c-Si) wafer, exhibits an almost completely flat frequency response over a wide range without any mechanical surface vibration systems. It is shown that the fabricated emitter can reproduce digitally recorded ultrasonic mouse-pups vocalizations very accurately in terms of the call duration, frequency dispersion, and sound pressure level. The thermoacoustic nc-Si device provides a powerful physical means for the understanding of ultrasonic communication mechanisms in various living animals.

Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

Energy Technology Data Exchange (ETDEWEB)

Galář, P., E-mail: pavel.galar@mff.cuni.cz; Malý, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, Prague 121 16 (Czech Republic); Čermák, J.; Kromka, A.; Rezek, B. [Institute of Physics ASCR v.v.i., Cukrovarnická 10, Prague 160 00 (Czech Republic)

2014-12-14

Hybrid diamond-organic interfaces are considered attractive for diverse applications ranging from electronics and energy conversion to medicine. Here we use time-resolved and time-integrated photoluminescence spectroscopy in visible spectral range (380–700 nm) to study electronic processes in H-terminated nanocrystalline diamond films (NCD) with 150 nm thin, electrochemically deposited polypyrrole (PPy) layer. We observe changes in dynamics of NCD photoluminescence as well as in its time-integrated spectra after polymer deposition. The effect is reversible. We propose a model where the PPy layer on the NCD surface promotes spatial separation of photo-generated charge carriers both in non-diamond carbon phase and in bulk diamond. By comparing different NCD thicknesses we show that the effect goes as much as 200 nm deep inside the NCD film.

Aluminum nitride and nanodiamond thin film microstructures

Energy Technology Data Exchange (ETDEWEB)

Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

2010-07-01

In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

Effects of precursors on the crystal structure and photoluminescence of CdS nanocrystalline

International Nuclear Information System (INIS)

Fu Zuoling; Zhou Shihong; Shi Jinsheng; Zhang Siyuan

2005-01-01

A series of cadmium sulfide (CdS) nanocrystalline were synthesized by precipitation from a mixture of aqueous solutions of cadmium salts and sulfur salts without adding any surface-termination agent. Their crystal structures and particle sizes were determined by X-ray diffraction (XRD). The CdS nanocrystalline precipitated from different precursors exhibited three cases: cubic phase, hexagonal phase and a hybrid of cubic and hexagonal phases. The photoluminescence (PL) of cadmium salt precursors and CdS nanocrystalline is also analyzed. Similar spectral band structure of cadmium salt precursors and CdS nanocrystalline is found. The PL of 3.4, 2.4 and 2.0 nm sized CdS nanocrystalline with the same crystal structure indicated quantum confinement effect

Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

NARCIS (Netherlands)

Verkerk, A.D.|info:eu-repo/dai/nl/304831719

2009-01-01

To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

Observation of two-photon absorption at UV radiation in ZnS ...

Indian Academy of Sciences (India)

2014-02-12

Feb 12, 2014 ... some enhancement in 2PA have been reported in ZnSe/ZnS core/shell and ZnS quantum structures at 806 nm and 532 nm laser pulses, respectively [8]. ... The average particle size (radius) as obtained from X-ray diffraction (XRD) measurements is ∼1.5 nm [6] and a standard Z-scan experimental set-up is ...

Study of self-diffusion of Fe in nanocrystalline FeNZr alloys using nuclear resonance reflectivity from isotopic multilayers

International Nuclear Information System (INIS)

Gupta, Ajay; Chakravarty, Sajoy; Gupta, Mukul; Horisberger, M.; Rueffer, Rudolf; Wille, Hans-Christian; Leupold, Olaf

2005-01-01

It is demonstrated that nuclear resonance reflectivity from isotopic multilayers can be used to do accurate measurements of self diffusion of iron in thin film samples. Diffusion lengths down to ∼ 1A 0 can be measured. The technique has been used to measure the self-diffusion of iron in FeNZr nanocrystalline alloys. The activation energy for self-diffusion of iron is found to be 0.8% ± 0.01 eV while the pre-exponential factor is 3.54 x 10 13 m 2 /s. (author)

Cu2ZnSnS4 Nanoparticle Absorber Layers for Thin-Film Solar Cells

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin

or a precursor ink that can be printed, sprayed, or in another way coated on a substrate appropriate for mass production. For CZTS, the power conversion effciency of these device are lagging behind the vacuum processed CZTS thin films, as certain challenges arise with solution-processing. The conversion...... of the as-deposited amorphous or nanocrystalline thin films into an almost "monocrystalline" material is not effective under the current sulfurization conditions. In this work, means have been taken to improve the properties of the nanoparticles in order to make them easier to handle and better...

Preparation of ZnS nanorods by ultrasonic waves

International Nuclear Information System (INIS)

Behboudnia, M.; Majlesara, M.H.; Khanbabaee, B.

2005-01-01

ZnS nanorods of approximately 1 μm in length and 20 nm in diameter have been prepared by sonicating ethylenediamine solution of elemental S and zinc acetate in presence of 1-decanthiol under air. The nanorods were characterized using techniques such as X-ray powder diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray analysis (EDAX) and UV-vis absorption spectroscopy. The as-prepared nanorods have regular shape, narrow size distribution and high purity, having band gap of 4.56 eV compared to 3.54 eV corresponding to its bulk single-crystal

A mechanism of inhibition of phase transitions in nano-grained close-packed Pd thin films

Czech Academy of Sciences Publication Activity Database

Hüger, E.; Káňa, Tomáš; Šob, Mojmír

2010-01-01

Roč. 34, č. 4 (2010), s. 421-427 ISSN 0364-5916 R&D Projects: GA AV ČR IAA100100920; GA MŠk(CZ) OC10008 Institutional research plan: CEZ:AV0Z20410507 Keywords : phase transformations * thin films * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.429, year: 2010

Nanocrystalline Al-based alloys - lightweight materials with attractive mechanical properties

International Nuclear Information System (INIS)

Latuch, J; Cieslak, G; Dimitrov, H; Krasnowski, M; Kulik, T

2009-01-01

In this study, several ways of bulk nanocrystalline Al-based alloys' production by high-pressure compaction of powders were explored. The effect of chemical composition and compaction parameters on the structure, quality and mechanical properties of the bulk samples was studied. Bulk nanocrystalline Al-Mm-Ni-(Fe,Co) alloys were prepared by ball-milling of amorphous ribbons followed by consolidation. The maximum microhardness (540 HV0.1) was achieved for the samples compacted at 275 deg. C under 7.7 GPa (which resulted in an amorphous bulk) and nanocrystallised at 235 deg. C for 20 min. Another group of the produced materials were bulk nanocrystalline Al-Si-(Ni,Fe)-Mm alloys obtained by ball-milling of nanocrystalline ribbons and consolidation. The hardness of these samples achieved the value five times higher (350HV) than that of commercial 4xxx series Al alloys. Nanocrystalline Al-based alloys were also prepared by mechanical alloying followed by hot-pressing. In this group of materials, there were Al-Fe alloys containing 50-85 at.% of Al and ternary or quaternary Al-Fe-(Ti, Si, Ni, Mg, B) alloys. Microhardness of these alloys was in the range of 613 - 1235 HV0.2, depending on the composition.

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

International Nuclear Information System (INIS)

Lin, C.-Y.; Fang, Y.-K.; Chen, S.-F.; Lin, P.-C.; Lin, C.-S.; Chou, T.-H; Hwang, J.S.; Lin, K.I.

2006-01-01

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm

Grain boundaries and mechanical properties of nanocrystalline diamond films.

Energy Technology Data Exchange (ETDEWEB)

Busmann, H.-G.; Pageler, A.; Gruen, D. M.

1999-08-06

Phase-pure nanocrystalline diamond thin films grown from plasmas of a hydrogen-poor carbon argon gas mixture have been analyzed regarding their hardness and elastic moduli by means of a microindentor and a scanning acoustic microscope.The films are superhard and the moduli rival single crystal diamond. In addition, Raman spectroscopy with an excitation wavelength of 1064 nm shows a peak at 1438 l/cm and no peak above 1500 l/cm, and X-ray photoelectron spectroscopy a shake-up loss at 4.2 eV. This gives strong evidence for the existence of solitary double bonds in the films. The hardness and elasticity of the films then are explained by the assumption, that the solitary double bonds interconnect the nanocrystals in the films, leading to an intergrain boundary adhesion of similar strength as the intragrain diamond cohesion. The results are in good agreement with recent simulations of high-energy grain boundaries.

Preparation, properties and anticancer effects of mixed As4S4/ZnS nanoparticles capped by Poloxamer 407.

Science.gov (United States)

Bujňáková, Z; Baláž, M; Zdurienčíková, M; Sedlák, J; Čaplovičová, M; Čaplovič, Ľ; Dutková, E; Zorkovská, A; Turianicová, E; Baláž, P; Shpotyuk, O; Andrejko, S

2017-02-01

Arsenic sulfide compounds have a long history of application in a traditional medicine. In recent years, realgar has been studied as a promising drug in cancer treatment. In this study, the arsenic sulfide (As 4 S 4 ) nanoparticles combined with zinc sulfide (ZnS) ones in different molar ratio have been prepared by a simple mechanochemical route in a planetary mill. The successful synthesis and structural properties were confirmed and followed via X-ray diffraction and high-resolution transmission electron microscopy measurements. The morphology of the particles was studied via scanning electron microscopy and transmission electron microscopy methods and the presence of nanocrystallites was verified. For biological tests, the prepared As 4 S 4 /ZnS nanoparticles were further milled in a circulation mill in a water solution of Poloxamer 407 (0.5wt%), in order to cover the particles with this biocompatible copolymer and to obtain stable nanosuspensions with unimodal distribution. The average size of the particles in the nanosuspensions (~120nm) was determined by photon cross-correlation spectroscopy method. Stability of the nanosuspensions was determined via particle size distribution and zeta potential measurements, confirming no physico-chemical changes for several months. Interestingly, with the increasing amount of ZnS in the sample, the stability was improved. The anti-cancer effects were tested on two melanoma cell lines, A375 and Bowes, with promising results, confirming increased efficiency of the samples containing both As 4 S 4 and ZnS nanocrystals. Copyright © 2016 Elsevier B.V. All rights reserved.

Fluorescence resonance energy transfer between ZnSe ZnS quantum dots and bovine serum albumin in bioaffinity assays of anticancer drugs

Science.gov (United States)

Shu, Chang; Ding, Li; Zhong, Wenying

2014-10-01

In the current work, using ZnSe ZnS quantum dots (QDs) as representative nanoparticles, the affinities of seven anticancer drugs for bovine serum albumin (BSA) were studied using fluorescence resonance energy transfer (FRET). The FRET efficiency of BSA-QD conjugates can reach as high as 24.87% by electrostatic interaction. The higher binding constant (3.63 × 107 L mol-1) and number of binding sites (1.75) between ZnSe ZnS QDs and BSA demonstrated that the QDs could easily associate to plasma proteins and enhance the transport efficacy of drugs. The magnitude of binding constants (103-106 L mol-1), in the presence of QDs, was between drugs-BSA and drugs-QDs in agreement with common affinities of drugs for serum albumins (104-106 L mol-1) in vivo. ZnSe ZnS QDs significantly increased the affinities for BSA of Vorinostat (SAHA), Docetaxel (DOC), Carmustine (BCNU), Doxorubicin (Dox) and 10-Hydroxycamptothecin (HCPT). However, they slightly reduced the affinities of Vincristine (VCR) and Methotrexate (MTX) for BSA. The recent work will not only provide useful information for appropriately understanding the binding affinity and binding mechanism at the molecular level, but also illustrate the ZnSe ZnS QDs are perfect candidates for nanoscal drug delivery system (DDS).

Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route

International Nuclear Information System (INIS)

Thorat, J. H.; Kanade, K. G.; Nikam, L. K.; Chaudhari, P. D.; Panmand, R. P.; Kale, B. B.

2012-01-01

In this study, we report the synthesis of well-aligned nanocrystalline hexagonal zinc oxide (ZnO) nanoparticles by facile solid-state and co-precipitation method. The co-precipitation reactions were performed using aqueous and ethylene glycol (EG) medium using zinc acetate and adipic acid to obtain zinc adipate and further decomposition at 450 °C to confer nanocrystalline ZnO hexagons. XRD shows the hexagonal wurtzite structure of the ZnO. Thermal study reveals complete formation of ZnO at 430 °C in case of solid-state method, whereas in case of co-precipitation method complete formation was observed at 400 °C. Field emission scanning electron microscope shows spherical morphology for ZnO synthesized by solid-state method. The aqueous-mediated ZnO by co-precipitation method shows rod-like morphology. These rods are formed via self assembling of spherical nanoparticles, however, uniformly dispersed spherical crystallites were seen in EG-mediated ZnO. Transmission electron microscope (TEM) investigations clearly show well aligned and highly crystalline transparent and thin hexagonal ZnO. The particle size was measured using TEM and was observed to be 50–60 nm in case of solid-state method and aqueous-mediated co-precipitation method, while 25–50 nm in case of EG-mediated co-precipitation method. UV absorption spectra showed sharp absorption peaks with a blue shift for EG-mediated ZnO, which demonstrate the mono-dispersed lower particle size. The band gap of the ZnO was observed to be 3.4 eV which is higher than the bulk, implies nanocrystalline nature of the ZnO. The photoluminescence studies clearly indicate the strong violet and weak blue emission in ZnO nanoparticles which is quite unique. The process investigated may be useful to synthesize other oxide semiconductors and transition metal oxides.

Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route

Energy Technology Data Exchange (ETDEWEB)

Thorat, J. H. [Mahatma Phule College, Department of Chemistry (India); Kanade, K. G. [Annasaheb Awate College (India); Nikam, L. K. [B.G. College (India); Chaudhari, P. D.; Panmand, R. P.; Kale, B. B., E-mail: kbbb1@yahoo.com [Center for Materials for Electronics Technology (C-MET) (India)

2012-02-15

In this study, we report the synthesis of well-aligned nanocrystalline hexagonal zinc oxide (ZnO) nanoparticles by facile solid-state and co-precipitation method. The co-precipitation reactions were performed using aqueous and ethylene glycol (EG) medium using zinc acetate and adipic acid to obtain zinc adipate and further decomposition at 450 Degree-Sign C to confer nanocrystalline ZnO hexagons. XRD shows the hexagonal wurtzite structure of the ZnO. Thermal study reveals complete formation of ZnO at 430 Degree-Sign C in case of solid-state method, whereas in case of co-precipitation method complete formation was observed at 400 Degree-Sign C. Field emission scanning electron microscope shows spherical morphology for ZnO synthesized by solid-state method. The aqueous-mediated ZnO by co-precipitation method shows rod-like morphology. These rods are formed via self assembling of spherical nanoparticles, however, uniformly dispersed spherical crystallites were seen in EG-mediated ZnO. Transmission electron microscope (TEM) investigations clearly show well aligned and highly crystalline transparent and thin hexagonal ZnO. The particle size was measured using TEM and was observed to be 50-60 nm in case of solid-state method and aqueous-mediated co-precipitation method, while 25-50 nm in case of EG-mediated co-precipitation method. UV absorption spectra showed sharp absorption peaks with a blue shift for EG-mediated ZnO, which demonstrate the mono-dispersed lower particle size. The band gap of the ZnO was observed to be 3.4 eV which is higher than the bulk, implies nanocrystalline nature of the ZnO. The photoluminescence studies clearly indicate the strong violet and weak blue emission in ZnO nanoparticles which is quite unique. The process investigated may be useful to synthesize other oxide semiconductors and transition metal oxides.

Phosphorescent inner filter effect-based sensing of xanthine oxidase and its inhibitors with Mn-doped ZnS quantum dots.

Science.gov (United States)

Tang, Dandan; Zhang, Jinyi; Zhou, Rongxin; Xie, Ya-Ni; Hou, Xiandeng; Xu, Kailai; Wu, Peng

2018-05-10

Overexpression and crystallization of uric acid have been recognized as the course of hyperuricemia and gout, which is produced via xanthine oxidase (XOD)-catalyzed oxidation of xanthine. Therefore, the medicinal therapy of hyperuricemia and gout is majorly based on the inhibition of the XOD enzymatic pathway. The spectroscopic nature of xanthine and uric acid, namely both absorption (near the ultraviolet region) and emission (non-fluorescent) characteristics, hinders optical assay development for XOD analysis. Therefore, the state-of-the-art analysis of XOD and the screening of XOD inhibitors are majorly based on chromatography. Here, we found the near ultraviolet absorption of uric acid overlapped well with the absorption of a large bandgap semiconductor quantum dots, ZnS. On the other hand, the intrinsic weak fluorescence of ZnS QDs can be substantially improved via transition metal ion doping. Therefore, herein, we developed an inner filter effect-based assay for XOD analysis and inhibitor screening with Mn-doped ZnS QDs. The phosphorescence of Mn-doped ZnS QDs could be quenched by uric acid generated from xanthine catabolism by XOD, leading to the phosphorescence turn-off detection of XOD with a limit of detection (3σ) of 0.02 U L-1. Furthermore, the existence of XOD inhibitors could inhibit the XOD enzymatic reaction, resulting in weakened phosphorescence quenching. Therefore, the proposed assay could also be explored for the facile screening analysis of XOD inhibitors, which is important for the potential medicinal therapy of hyperuricemia and gout.

Charge carrier dynamics investigation of CuInS{sub 2} quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

Energy Technology Data Exchange (ETDEWEB)

Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui, E-mail: yinghui-wang@outlook.com; Liu, Qinghui, E-mail: liuqinghui@jlu.edu.cn; Tan, Mingrui [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China); Zhou, Qiang [Jilin University, Key Laboratory of Superhard Materials, College of Physics (China); Zhang, Hanzhuang, E-mail: zhanghz@jlu.edu.cn [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China)

2016-12-15

The role of ZnS shell on the photo-physical properties within CuInS{sub 2}/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS{sub 2} and CuInS{sub 2}/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

International Nuclear Information System (INIS)

Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

1999-01-01

Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

Synthesis and photoluminescence enhancement of PVA capped Mn2+ doped ZnS nanoparticles and observation of tunable dual emission: A new approach

International Nuclear Information System (INIS)

Viswanath, R.; Bhojya Naik, H.S.; Yashavanth Kumar, G.S.; Prashanth Kumar, P.N.; Harish, K.N.; Prabhakara, M.C.; Praveen, R.

2014-01-01

Highlights: • Synthesis of PVA capped Mn 2+ doped ZnS nanoparticles by chemical precipitation method in air atmosphere. • Characterized by the spectral techniques. • Study on their optical properties. • Calculation of particle size by different techniques. • Investigation of the increased luminescence characteristics (UV to IR region) of Mn 2+ doped ZnS ions at room temperature and the origin of the luminescence observed. - Abstract: This paper reports the enhanced photoluminescence (PL) property of polyvinyl alcohol (PVA) capped Mn 2+ doped ZnS nanocrystals prepared by chemical precipitation method. The surface-modified Mn 2+ doped ZnS nanocrystals resulted in the multi-color property. The morphology and crystallite size were characterized by field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The crystallite size was estimated to be 5 nm from HRTEM and calculated as 2–4 nm from peak broadening of the X-ray diffraction (XRD) pattern with cubic zincblende structure. Increase in the band gap with decrease in the crystallite size was observed from the UV–visible absorption spectrum, which confirms the quantum confinement effect. The room temperature photoluminescence (PL) emission measurements revealed the presence of blue (427 nm) and near IR reddish–orange (752 nm) emission bands in addition to the typical yellow–orange (585 nm) bands in all the Mn 2+ doped samples, which were attributed due to transition within the 3ds configuration of Mn 2+ ions incorporation in ZnS host under UV excitation at 320 nm. As far as we know, the reddish–orange bands at 752 nm near IR region along with the blue and yellow–orange colored PL are reported for the first time. In this way, the PL color from these ZnS nanocrystals can be tuned from UV to near infrared region (IR). The synthesized ZnS:Mn NPs can be further functionalized for using them as biolabels

NATO Advanced Research Workshop on Properties and Applications of Nanocrystalline Alloys from Amorphous Precursors

CERN Document Server

Idzikowski, Bogdan; Miglierini, Marcel

2005-01-01

Metallic (magnetic and non-magnetic) nanocrystalline materials have been known for over ten years but only recent developments in the research into those complex alloys and their metastable amorphous precursors have created a need to summarize the most important accomplishments in the field. This book is a collection of articles on various aspects of metallic nanocrystalline materials, and an attempt to address this above need. The main focus of the papers is put on the new issues that emerge in the studies of nanocrystalline materials, and, in particular, on (i) new compositions of the alloys, (ii) properties of conventional nanocrystalline materials, (iii) modeling and simulations, (iv) preparation methods, (v) experimental techniques of measurements, and (vi) different modern applications. Interesting phenomena of the physics of nanocrystalline materials are a consequence of the effects induced by the nanocrystalline structure. They include interface physics, the influence of the grain boundaries, the aver...

Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

Energy Technology Data Exchange (ETDEWEB)

Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

2011-04-01

Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 {sup o}C the heat transfer is controlled by crystalline component.

Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

International Nuclear Information System (INIS)

Poffo, C.M.; Lima, J.C. de; Souza, S.M.; Triches, D.M.; Grandi, T.A.; Biasi, R.S. de

2011-01-01

Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 o C the heat transfer is controlled by crystalline component.

Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

International Nuclear Information System (INIS)

Prados, C; Pina, E; Hernando, A; Montone, A

2002-01-01

The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

Challenges in quantitative crystallographic characterization of 3D thin films by ACOM-TEM

Energy Technology Data Exchange (ETDEWEB)

Kobler, A. [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen (Germany); Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen (Germany); Kübel, C., E-mail: christian.kuebel@kit.edu [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen (Germany); Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen (Germany)

2017-02-15

Automated crystal orientation mapping for transmission electron microscopy (ACOM-TEM) has become an easy to use method for the investigation of crystalline materials and complements other TEM methods by adding local crystallographic information over large areas. It fills the gap between high resolution electron microscopy and electron back scatter diffraction in terms of spatial resolution. Recent investigations showed that spot diffraction ACOM-TEM is a quantitative method with respect to sample parameters like grain size, twin density, orientation density and others. It can even be used in combination with in-situ tensile or thermal testing. However, there are limitations of the current method. In this paper we discuss some of the challenges and discuss solutions, e.g. we present an ambiguity filter that reduces the number of pixels with a ‘180° ambiguity problem’. For that an ACOM-TEM tilt series of nanocrystalline Pd thin films with overlapping crystallites was acquired and analyzed. - Highlights: • Tilt series of nanocrystalline Pd thin films. • Quantitative ACOM-TEM data processing, including a rotation map of crystallites. • Noise filter for orientation data: Ambiguity Filter and min. distance filter.

Size dependent optical characteristics of chemically deposited

Indian Academy of Sciences (India)

Keywords. Thin film; ZnS; CBD method; optical properties. Abstract. ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S2- and Zn2+ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the ...

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

2015-11-15

The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

Syntheses of nanocrystalline BaTiO3 and their optical properties

Science.gov (United States)

Yu, J.; Chu, J.; Zhang, M.

Stoichiometric and titanium-excess nanocrystalline barium titanates were synthesized using a hydrothermal process at various hydrothermal temperatures and with further heat treatment at 500 °C and 900 °C. Owing to the different process conditions, the excess titanium exists in different states and configurations within the nanocrystalline BaTiO3 matrix; this was demonstrated by X-ray diffraction, Raman scattering, and photoluminescence. In these nanocrystalline BaTiO3, the 590, 571, 543 and 694 nm light emission bands were observed; mechanisms leading to such emissions were also discussed.

Electrochemistry of Inorganic Nanocrystalline Electrode Materials for Lithium Batteries

Directory of Open Access Journals (Sweden)

C. W. Kwon

2003-01-01

much different from that of traditional crystalline ones because of their significant ‘surface effects’. In connection with that, the nanocrystalline cathode materials are reported to have an enhanced electrochemical activity when the first significative electrochemical step is insertion of Li ions (discharge process. The “electrochemical grafting” concept will be given as a plausible explanation. As illustrative examples, electrochemical behaviors of nanocrystalline manganese oxydes are presented.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

Science.gov (United States)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

2016-01-01

Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Ultra thin films of nanocrystalline Ge studied by AFM and ...

Indian Academy of Sciences (India)

Unknown

peak position and an asymmetrical broadening on the lower frequency side when compared with the spectrum of the bulk Ge sample. The shift of the Raman .... resultant fit to Ic(ω) (1) (thin line) and a Lorentzian function (dotted line). Figure 6 shows Raman spectra of the samples B and C. A shoulder at 280 cm–1 can be.

Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Chu, J.B.; Huang, S.M.; Zhang, D.W.; Bian, Z.Q.; Li, X.D.; Sun, Z. [East China Normal University, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, Shanghai (China); Yin, X.J. [Singapore Polytechnic, Advanced Materials Technology Center, Singapore (Singapore)

2009-06-15

This paper presents further insights and observations of the chemical bath deposition (CBD) of ZnS thin films using an aqueous medium involving Zn-salt, ammonium sulfate, aqueous ammonia, and thiourea. Results on physical and chemical properties of the grown layers as a function of ammonia concentration are reported. Physical and chemical properties were analyzed using scanning electron microscopy (SEM), X-ray energy dispersive (EDX), and X-ray diffraction (XRD). Rapid growth of nanostructured ZnO films on fluorine-doped SnO{sub 2} (FTO) glass substrates was developed. ZnO films crystallized in a wurtzite hexagonal structure and with a very small quantity of Zn(OH){sub 2} and ZnS phases were obtained for the ammonia concentration ranging from 0.75 to 2.0 M. Flower-like and columnar nanostructured ZnO films were deposited in two ammonia concentration ranges, respectively: one between 0.75 and 1.0 M and the other between 1.4 and 2.0 M. ZnS films were formed with a high ammonia concentration of 3.0 M. The formation mechanisms of ZnO, Zn(OH){sub 2}, and ZnS phases were discussed in the CBD process. The developed technique can be used to directly and rapidly grow nanostructured ZnO film photoanodes. Annealed ZnO nanoflower and columnar nanoparticle films on FTO substrates were used as electrodes to fabricate the dye sensitized solar cells (DSSCs). The DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 0.84%, which is higher compared to that (0.45%) of the cell being constructed using a photoanode of columnar nanoparticle ZnO film. The results have demonstrated the potential applications of CBD nanostructured ZnO films for photovoltaic cells. (orig.)

Using a precursor in lamellar structure for the synthesis of uniform ZnS nanocrystals

KAUST Repository

Xu, Xinjiang; Jiang, Shunping; Wu, Xiaoyuan; Chang, Jinjing; Xu, Jiangping

2011-01-01

Uniform ZnS nanocrystals of about 15 nm were prepared through a low temperature hydrothermal approach by treating Zn-PhPO nanosheets with Na 2S aqueous solution. Both the precursor and the final product were studied by the means of X-ray diffraction

High-pressure structural behaviour of nanocrystalline Ge

International Nuclear Information System (INIS)

Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

Interaction of insulin with colloidal ZnS quantum dots functionalized by various surface capping agents.

Science.gov (United States)

Hosseinzadeh, Ghader; Maghari, Ali; Farniya, Seyed Morteza Famil; Keihan, Amir Homayoun; Moosavi-Movahedi, Ali A

2017-08-01

Interaction of quantum dots (QDs) and proteins strongly influenced by the surface characteristics of the QDs at the protein-QD interface. For a precise control of these surface-related interactions, it is necessary to improve our understanding in this field. In this regard, in the present work, the interaction between the insulin and differently functionalized ZnS quantum dots (QDs) were studied. The ZnS QDs were functionalized with various functional groups of hydroxyl (OH), carboxyl (COOH), amine (NH 2 ), and amino acid (COOH and NH 2 ). The effect of surface hydrophobicity was also studied by changing the alkyl-chain lengths of mercaptocarboxylic acid capping agents. The interaction between insulin and the ZnS QDs were investigated by fluorescence quenching, synchronous fluorescence, circular dichroism (CD), and thermal aggregation techniques. The results reveal that among the studied QDs, mercaptosuccinic acid functionalized QDs has the strongest interaction (∆G ° =-51.50kJ/mol at 310K) with insulin, mercaptoethanol functionalized QDs destabilize insulin by increasing the beta-sheet contents, and only cysteine functionalized QDs improves the insulin stability by increasing the alpha-helix contents of the protein, and. Our results also indicate that by increasing the alkyl-chain length of capping agents, due to an increase in hydrophobicity of the QDs surface, the beta-sheet contents of insulin increase which results in the enhancement of insulin instability. Copyright © 2017 Elsevier B.V. All rights reserved.

Effect of grain size on corrosion of nanocrystalline copper in NaOH solution

International Nuclear Information System (INIS)

Luo Wei; Xu Yimin; Wang Qiming; Shi Peizhen; Yan Mi

2010-01-01

Research highlights: → Coppers display an active-passive-transpassive behaviour with duplex passive film. → Grain size variation has little effect on the overall corrosion behaviour of Cu. → Little effect on corrosion may be due to duplex passivation in NaOH solution. → Bulk nanocrystalline Cu show bamboo-like flake corrosion structure. - Abstract: Effect of grain size on corrosion of bulk nanocrystalline copper was investigated using potentiodynamic polarization measurements in 0.1 M NaOH solution. Bulk nanocrystalline copper was prepared by inert gas condensation and in situ warm compress (IGCWC) method. The grain sizes of all bulk nanocrystalline samples were determined to be 48, 68 and 92 nm using X-ray diffraction (XRD). Results showed that bulk coppers displayed an active-passive-transpassive behaviour with duplex passive films. From polycrystalline to nanocrystalline, grain size variation showed little effect on the overall corrosion resistance of copper samples.

Thermal and optical characterization of biologically synthesized ZnS nanoparticles synthesized from an endophytic fungus Aspergillus flavus: A colorimetric probe in metal detection.

Science.gov (United States)

Uddandarao, Priyanka; Balakrishnan, Raj Mohan

2017-03-15

Nanostructured semiconductor materials are of great importance for several technological applications due to their optical and thermal properties. The design and fabrication of metal sulfide nanoparticles with tunable properties for advanced applications have drawn a great deal of attention in the field of nanotechnology. ZnS is a potential II-IV group material which is used in hetero-junction solar cells, light emitting diodes, optoelectronic devices, electro luminescent devices and photovoltaic cells. Due to their multiple applications, there is a need to elucidate their thermal and optical properties. In the present study, thermal and optical properties of biologically synthesized ZnS nanoparticles are determined in detail with Thermal Gravimetric Analysis (TGA), Derivative Thermogravimetric Analysis (DTG), Differential Scanning Calorimeter (DSC), Diffuse Reflectance Spectroscopy (DRS), Photoluminescence (PL) and Raman spectroscopy. The results reveal that ZnS NPs exhibit a very strong quantum confinement with a significant increase in their optical band gap energy. These biologically synthesized ZnS NPs contain protein residues that can selectively bind with metal ions in aqueous solutions and can exhibit an aggregation-induced color change. This phenomenon is utilized to quantitatively measure the metal concentrations of Cu 2+ and Mn 2+ in this study. Further the stability of nanoparticles for the metal sensing process is accessed by UV-Vis spectrometer, zeta potential and cyclic voltammeter. The selectivity and sensitivity of ZnS NPs indicate its potential use as a sensor for metal detection in the ecosystem. Copyright © 2016 Elsevier B.V. All rights reserved.

Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

International Nuclear Information System (INIS)

Mohammadi, Majid; Ghasemi, Ali; Tavoosi, Majid

2016-01-01

Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe_2O_3–B_2O_3 powder mixtures with sufficient amount of CaH_2 were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys can be successfully synthesized by the reduction reaction of Fe_2O_3 and B_2O_3 with CaH_2 during mechanical alloying. The structure of produced Fe_9_5B_5 and Fe_8_5B_1_5 alloys was a combination of Fe and Fe_2B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–B_2O_3–CaH_2 during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

ZnS, CdS and HgS nanoparticles via alkyl-phenyl dithiocarbamate complexes as single source precursors.

Science.gov (United States)

Onwudiwe, Damian C; Ajibade, Peter A

2011-01-01

The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported. Thermogravimetric analysis of the single source precursors showed sharp decomposition leading to their respective metal sulfides. The structural and optical properties of the prepared nanoparticles were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) UV-Vis and photoluminescence spectroscopy. The X-ray diffraction pattern showed that the prepared ZnS nanoparticles have a cubic sphalerite structure; the CdS indicates a hexagonal phase and the HgS show the presence of metacinnabar phase. The TEM image demonstrates that the ZnS nanoparticles are dot-shaped, the CdS and the HgS clearly showed a rice and spherical morphology respectively. The UV-Vis spectra exhibited a blue-shift with respect to that of the bulk samples which is attributed to the quantum size effect. The band gap of the samples have been calculated from absorption spectra and werefound to be about 4.33 eV (286 nm), 2.91 eV (426 nm) and 4.27 eV (290 nm) for the ZnS, CdS and HgS samples respectively.

ZnS, CdS and HgS Nanoparticles via Alkyl-Phenyl Dithiocarbamate Complexes as Single Source Precursors

Directory of Open Access Journals (Sweden)

Peter A. Ajibade

2011-08-01

Full Text Available The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported. Thermogravimetric analysis of the single source precursors showed sharp decomposition leading to their respective metal sulfides. The structural and optical properties of the prepared nanoparticles were characterized by means of X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM UV-Vis and photoluminescence spectroscopy. The X-ray diffraction pattern showed that the prepared ZnS nanoparticles have a cubic sphalerite structure; the CdS indicates a hexagonal phase and the HgS show the presence of metacinnabar phase. The TEM image demonstrates that the ZnS nanoparticles are dot-shaped, the CdS and the HgS clearly showed a rice and spherical morphology respectively. The UV-Vis spectra exhibited a blue-shift with respect to that of the bulk samples which is attributed to the quantum size effect. The band gap of the samples have been calculated from absorption spectra and werefound to be about 4.33 eV (286 nm, 2.91 eV (426 nm and 4.27 eV (290 nm for the ZnS, CdS and HgS samples respectively.

Nanocrystalline Fe-Pt alloys. Phase transformations, structure and magnetism

Energy Technology Data Exchange (ETDEWEB)

Lyubina, J.V.

2006-12-21

This work has been devoted to the study of phase transformations involving chemical ordering and magnetic properties evolution in bulk Fe-Pt alloys composed of nanometersized grains. Nanocrystalline Fe{sub 100-x}Pt{sub x} (x=40-60) alloys have been prepared by mechanical ball milling of elemental Fe and Pt powders at liquid nitrogen temperature. The as-milled Fe-Pt alloys consist of {proportional_to} 100 {mu}m sized particles constituted by randomly oriented grains having an average size in the range of 10-40 nm. Depending on the milling time, three major microstructure types have been obtained: samples with a multilayer-type structure of Fe and Pt with a thickness of 20-300 nm and a very thin (several nanometers) A1 layer at their interfaces (2 h milled), an intermediate structure, consisting of finer lamellae of Fe and Pt (below approximately 100 nm) with the A1 layer thickness reaching several tens of nanometers (4 h milled) and alloys containing a homogeneous A1 phase (7 h milled). Subsequent heat treatment at elevated temperatures is required for the formation of the L1{sub 0} FePt phase. The ordering develops via so-called combined solid state reactions. It is accompanied by grain growth and thermally assisted removal of defects introduced by milling and proceeds rapidly at moderate temperatures by nucleation and growth of the ordered phases with a high degree of the long-range order. In a two-particle interaction model elaborated in the present work, the existence of hysteresis in recoil loops has been shown to arise from insufficient coupling between the low- and the high-anisotropy particles. The model reveals the main features of magnetisation reversal processes observed experimentally in exchange-coupled systems. Neutron diffraction has been used for the investigation of the magnetic structure of ordered and partially ordered nanocrystalline Fe-Pt alloys. (orig.)

Synthesis and photoluminescence enhancement of PVA capped Mn{sup 2+} doped ZnS nanoparticles and observation of tunable dual emission: A new approach

Energy Technology Data Exchange (ETDEWEB)

Viswanath, R. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Bhojya Naik, H.S., E-mail: hsb_naik@rediffmail.com [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Yashavanth Kumar, G.S.; Prashanth Kumar, P.N.; Harish, K.N. [Department of Studies and Research in Industrial Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta, Karnataka, 577451 (India); Prabhakara, M.C. [Department of P.G. Studies and Research in Industrial Chemistry, Sir. M.V. Government Science College, Bommanakatte, Shimoga, Bhadravathi, Karnataka, 577302 (India); Praveen, R. [Department of Technical Education, Automobile Technology Branch HMS Polytechnic (Government Aided), Tumkur, Karnataka, 572102 (India)

2014-05-01

Highlights: • Synthesis of PVA capped Mn{sup 2+} doped ZnS nanoparticles by chemical precipitation method in air atmosphere. • Characterized by the spectral techniques. • Study on their optical properties. • Calculation of particle size by different techniques. • Investigation of the increased luminescence characteristics (UV to IR region) of Mn{sup 2+} doped ZnS ions at room temperature and the origin of the luminescence observed. - Abstract: This paper reports the enhanced photoluminescence (PL) property of polyvinyl alcohol (PVA) capped Mn{sup 2+} doped ZnS nanocrystals prepared by chemical precipitation method. The surface-modified Mn{sup 2+} doped ZnS nanocrystals resulted in the multi-color property. The morphology and crystallite size were characterized by field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) techniques. The crystallite size was estimated to be 5 nm from HRTEM and calculated as 2–4 nm from peak broadening of the X-ray diffraction (XRD) pattern with cubic zincblende structure. Increase in the band gap with decrease in the crystallite size was observed from the UV–visible absorption spectrum, which confirms the quantum confinement effect. The room temperature photoluminescence (PL) emission measurements revealed the presence of blue (427 nm) and near IR reddish–orange (752 nm) emission bands in addition to the typical yellow–orange (585 nm) bands in all the Mn{sup 2+} doped samples, which were attributed due to transition within the 3ds configuration of Mn{sup 2+} ions incorporation in ZnS host under UV excitation at 320 nm. As far as we know, the reddish–orange bands at 752 nm near IR region along with the blue and yellow–orange colored PL are reported for the first time. In this way, the PL color from these ZnS nanocrystals can be tuned from UV to near infrared region (IR). The synthesized ZnS:Mn NPs can be further functionalized for

Synthesis of Mesoporous Nanocrystalline Zirconia by Surfactant-Assisted Hydrothermal Approach.