Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

Czech Academy of Sciences Publication Activity Database

Lišková, Jana; Babchenko, Oleg; Varga, Marián; Kromka, Alexander; Hadraba, Daniel; Švindrych, Zdeněk; Burdíková, Zuzana; Bačáková, Lucie

2015-01-01

Roč. 10, č. 2015 (2015), s. 869-884 E-ISSN 1178-2013 R&D Projects: GA MŠk(CZ) EE2.3.30.0025; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:67985823 ; RVO:68378271 Keywords : nanocrystalline diamond film * osteoblast * Saos-2 Subject RIV: EI - Biotechnology ; Bionics Impact factor: 4.320, year: 2015

Nanocrystalline diamond film as cathode for gas discharge sensors

Energy Technology Data Exchange (ETDEWEB)

Jou, Shyankay, E-mail: sjou@mail.ntust.edu.t [Graduate Institute of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Huang, Bohr-Ran [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Wu, Meng-Chang [Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan (China)

2010-05-31

Nanocrystalline diamond (NCD) film was deposited on a silicon substrate utilizing microwave plasma-enhanced chemical vapor deposition in a mixed flow of methane, hydrogen and argon. The deposited film had a cauliflower-like morphology, and was composed of NCD, carbon clusters and mixed sp{sup 2}- and sp{sup 3}-bonded carbon. Electron field emission (EFE) in vacuum and electrical discharges in Ar, N{sub 2} and O{sub 2} using the NCD film as the cathode were characterized. The turn-on field for EFE and the geometric enhancement factor for the NCD film were 8.5 V/{mu}m and 668, respectively. The breakdown voltages for Ar, N{sub 2} and O{sub 2} increased with pressures from 1.33 x 10{sup 4} Pa to 1.01 x 10{sup 5} Pa, following the right side of the normal Paschen curve.

Guided assembly of nanoparticles on electrostatically charged nanocrystalline diamond thin films

Directory of Open Access Journals (Sweden)

Verveniotis Elisseos

2011-01-01

Full Text Available Abstract We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp2 phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp2 phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems.

Application of printed nanocrystalline diamond film for electron emission cathode

International Nuclear Information System (INIS)

Zhang Xiuxia; Wei Shuyi; Lei Chongmin; Wei Jie; Lu Bingheng; Ding Yucheng; Zhu Changchun

2011-01-01

The low-cost and large area screen-printed nano-diamond film (NDF) for electronic emission was fabricated. The edges and corners of nanocrystalline diamond are natural field-emitters. The nano-diamond paste for screen-printing was fabricated of mixing nano-graphite and other inorganic or organic vehicles. Through enough disperse in isopropyl alcohol by ultrasonic nano-diamond paste was screen-printed on the substrates to form NDF. SEM images showed that the surface morphology of NDF was improved, and the nano-diamond emitters were exposed from NDF through the special thermal-sintering technique and post-treatment process. The field emission characteristics of NDF were measured under all conditions with 10 -6 Pa pressure. The results indicated that the field emission stability and emission uniformity of NDF were improved through hydrogen plasma post-treatment process. The turn-on field decreased from 1.60 V/μm to 1.25 V/μm. The screen-printed NDF can be applied to the displays electronic emission cathode for low-cost outdoor in large area.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

International Nuclear Information System (INIS)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

2016-01-01

Graphical abstract: - Highlights: • The nanocrystalline diamond (NCD) surface is functionalized with F or O. • The cell adhesion and growth are evaluated on the functionalized NCD surface. • The cell adhesion and growth depend on the wettability of the surface. • Cell patterning was achieved by using of hydrophilic and hydrophobic surfaces. • Neuroblastoma cells were arrayed on the micro-patterned NCD surface. - Abstract: Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O_2 or C_3F_8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

Energy Technology Data Exchange (ETDEWEB)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup, E-mail: kssong10@kumoh.ac.kr

2016-01-15

Graphical abstract: - Highlights: • The nanocrystalline diamond (NCD) surface is functionalized with F or O. • The cell adhesion and growth are evaluated on the functionalized NCD surface. • The cell adhesion and growth depend on the wettability of the surface. • Cell patterning was achieved by using of hydrophilic and hydrophobic surfaces. • Neuroblastoma cells were arrayed on the micro-patterned NCD surface. - Abstract: Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O{sub 2} or C{sub 3}F{sub 8} gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Influence of the gas phase composition on nanocrystalline diamond films prepared by MWCVD

Czech Academy of Sciences Publication Activity Database

Popov, C.; Jelínek, Miroslav; Boycheva, S.; Vorlíček, Vladimír; Kulisch, W.

2005-01-01

Roč. 23, - (2005), s. 31-34 ISSN 1422-6375 R&D Projects: GA AV ČR(CZ) IAA1010110 Grant - others:European Community Marie Curie Fellowship(XE) HPMF-CT-2002-01713 Institutional research plan: CEZ:AV0Z1010914 Keywords : microwave plasma CVD * nanocrystalline diamond films * characterization Subject RIV: BL - Plasma and Gas Discharge Physics

Design and investigation of properties of nanocrystalline diamond optical planar waveguides.

Science.gov (United States)

Prajzler, Vaclav; Varga, Marian; Nekvindova, Pavla; Remes, Zdenek; Kromka, Alexander

2013-04-08

Diamond thin films have remarkable properties comparable with natural diamond. Because of these properties it is a very promising material for many various applications (sensors, heat sink, optical mirrors, chemical and radiation wear, cold cathodes, tissue engineering, etc.) In this paper we report about design, deposition and measurement of properties of optical planar waveguides fabricated from nanocrystalline diamond thin films. The nanocrystalline diamond planar waveguide was deposited by microwave plasma enhanced chemical vapor deposition and the structure of the deposited film was studied by scanning electron microscopy and Raman spectroscopy. The design of the presented planar waveguides was realized on the bases of modified dispersion equation and was schemed for 632.8 nm, 964 nm, 1 310 nm and 1 550 nm wavelengths. Waveguiding properties were examined by prism coupling technique and it was found that the diamond based planar optical element guided one fundamental mode for all measured wavelengths. Values of the refractive indices of our NCD thin film measured at various wavelengths were almost the same as those of natural diamond.

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

Science.gov (United States)

Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

2014-08-01

A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

Patterned hydrophobic and hydrophilic surfaces of ultra-smooth nanocrystalline diamond layers

Energy Technology Data Exchange (ETDEWEB)

Mertens, M., E-mail: michael.mertens@uni-ulm.de [Institute of Micro and Nanomaterials, Ulm University, 89081 Ulm (Germany); Mohr, M.; Brühne, K.; Fecht, H.J. [Institute of Micro and Nanomaterials, Ulm University, 89081 Ulm (Germany); Łojkowski, M.; Święszkowski, W. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Łojkowski, W. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

2016-12-30

Highlights: • Hydrophobic and hydrophilic properties on fluorine-, hydrogen- and oxygen- terminated ultra-nanocrystalline diamond films. • Micropatterned - multi-terminated layers with both hydrophobic and hydrophilic areas on one sample. • Visualization of multi-terminated surfaces by e.g. SEM and LFM. • Roughness and friction investigations on different terminated surfaces. • Smooth and biocompatible surfaces with same roughness regardless of hydrophobicity for microbiological investigations. - Abstract: In this work, we show that ultra nanocrystalline diamond (UNCD) surfaces have been modified to add them hydrophobic and hydrophilic properties. The nanocrystalline diamond films were deposited using the hot filament chemical vapor deposition (HFCVD) technique. This allows growing diamond on different substrates which can be even 3D or structured. Silicon and, for optical applications, transparent quartz glass are the preferred substrates for UNCD layers growth. Fluorine termination leads to strong hydrophobic properties as indicated by a high contact angle for water of more than 100°. Hydrogen termination shows lesser hydrophobic behavior. Hydrophilic characteristics has been realised with oxygen termination. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX) measurements confirm the oxygen and fluorine- termination on the nanocrystalline diamond surface. Further, by micropatterning using photolithography, multi-terminated layers have been created with both hydrophobic and hydrophilic areas. In addition, we have shown that retermination is achieved, and the properties of the surface have been changed from hydrophobic to hydrophilic and vice versa. Micro- roughness and stress in the grown film influences slightly the wetting angle as well. The opportunity to realize local differences in hydrophobicity on nanocrystalline diamond layers, in any size or geometry, offers interesting applications for example in

Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

Directory of Open Access Journals (Sweden)

Liskova J

2015-01-01

Full Text Available Jana Liskova,1 Oleg Babchenko,2 Marian Varga,2 Alexander Kromka,2 Daniel Hadraba,1 Zdenek Svindrych,1 Zuzana Burdikova,1 Lucie Bacakova1 1Institute of Physiology, Academy of Sciences of the Czech Republic, Prague, Czech Republic; 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic Abstract: Nanocrystalline diamond (NCD films are promising materials for bone implant coatings because of their biocompatibility, chemical resistance, and mechanical hardness. Moreover, NCD wettability can be tailored by grafting specific atoms. The NCD films used in this study were grown on silicon substrates by microwave plasma-enhanced chemical vapor deposition and grafted by hydrogen atoms (H-termination or oxygen atoms (O-termination. Human osteoblast-like Saos-2 cells were used for biological studies on H-terminated and O-terminated NCD films. The adhesion, growth, and subsequent differentiation of the osteoblasts on NCD films were examined, and the extracellular matrix production and composition were quantified. The osteoblasts that had been cultivated on the O-terminated NCD films exhibited a higher growth rate than those grown on the H-terminated NCD films. The mature collagen fibers were detected in Saos-2 cells on both the H-terminated and O-terminated NCD films; however, the quantity of total collagen in the extracellular matrix was higher on the O-terminated NCD films, as were the amounts of calcium deposition and alkaline phosphatase activity. Nevertheless, the expression of genes for osteogenic markers – type I collagen, alkaline phosphatase, and osteocalcin – was either comparable on the H-terminated and O-terminated films or even lower on the O-terminated films. In conclusion, the higher wettability of the O-terminated NCD films is promising for adhesion and growth of osteoblasts. In addition, the O-terminated surface also seems to support the deposition of extracellular matrix proteins and extracellular matrix

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

DEFF Research Database (Denmark)

Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

2015-01-01

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

Characterization of amorphous and nanocrystalline carbon films

International Nuclear Information System (INIS)

Chu, Paul K.; Li Liuhe

2006-01-01

Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

Science.gov (United States)

Rani, R.; Kumar, N.; Lin, I.-Nan

2016-05-01

Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

International Nuclear Information System (INIS)

Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

2004-01-01

Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Li, Cuiping, E-mail: licp226@126.com, E-mail: limingji@163.com; Li, Mingji, E-mail: licp226@126.com, E-mail: limingji@163.com; Wu, Xiaoguo; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Dai, Wei; Xu, Sheng [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Li, Hongji [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China)

2016-04-07

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Ti interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.

Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2009-01-01

Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

Polydopamine-modified nanocrystalline diamond thin films as a platform for bio-sensing applications

Czech Academy of Sciences Publication Activity Database

Pop-Georgievski, Ognen; Neykova, Neda; Proks, Vladimír; Houdková, Jana; Ukraintsev, Egor; Zemek, Josef; Kromka, Alexander; Rypáček, František

2013-01-01

Roč. 543, 30 September (2013), s. 180-186 ISSN 0040-6090. [International Conference on NANO-structures self-assembly - NANOSEA 2012 /4./. S. Margherita di Pula - Sardinie, 25.06.2012-29.06.2012] R&D Projects: GA ČR GAP108/11/1857; GA ČR(CZ) GBP108/12/G108 Grant - others:ČVUT(CZ) SGS10/297/OHK4/3T/14 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : nanocrystalline diamond films * NCD * polydopamine Subject RIV: CD - Macromolecular Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.867, year: 2013

Ultra-nanocrystalline diamond nanowires with enhanced electrochemical properties

International Nuclear Information System (INIS)

Shalini, Jayakumar; Lin, Yi-Chieh; Chang, Ting-Hsun; Sankaran, Kamatchi Jothiramalingam; Chen, Huang-Chin; Lin, I.-Nan; Lee, Chi-Young; Tai, Nyan-Hwa

2013-01-01

The effects of N 2 incorporation in Ar/CH 4 plasma on the electrochemical properties and microstructure of ultra-nanocrystalline diamond (UNCD) films are reported. While the electrical conductivity of the films increased monotonously with increasing N 2 content (up to 25%) in the plasma, the electrochemical behavior was optimized for UNCD films grown in (Ar–10% N 2 )/CH 4 plasma. Transmission electron microscopy showed that the main factor resulting in high conductivity in the films was the formation of needle-like nanodiamond grains and the induction graphite layer encapsulating these grains. The electrochemical process for N 2 -incorporated UNCD films can readily be activated due to the presence of nanographite along the grain boundaries of the films. The formation of needle-like diamond grains was presumably due to the presence of CN species that adhered to the existing nanodiamond clusters, which suppressed radial growth of the nanodiamond crystals, promoting anisotropic growth and the formation of needle-like nanodiamond. The N 2 -incorporated UNCD films outperformed other electrochemical electrode materials, such as boron-doped diamond and glassy carbon, in that the UNCD electrodes could sense dopamine, urea, and ascorbic acid simultaneously in the same mixture with clear resolution

Nanocrystalline diamond coatings for mechanical seals applications.

Science.gov (United States)

Santos, J A; Neto, V F; Ruch, D; Grácio, J

2012-08-01

A mechanical seal is a type of seal used in rotating equipment, such as pumps and compressors. It consists of a mechanism that assists the connection of the rotating shaft to the housings of the equipments, preventing leakage or avoiding contamination. A common cause of failure of these devices is end face wear out, thus the use of a hard, smooth and wear resistant coating such as nanocrystalline diamond would be of great importance to improve their working performance and increase their lifetime. In this paper, different diamond coatings were deposited by the HFCVD process, using different deposition conditions. Additionally, the as-grown films were characterized for, quality, morphology and microstructure using scanning electron microscopy (SEM) and Raman spectroscopy. The topography and the roughness of the films were characterized by atomic force microscopy (AFM).

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-15

Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

Science.gov (United States)

Gruen, Dieter M [Downers Grove, IL

2009-08-11

One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Tailoring nanocrystalline diamond coated on titanium for osteoblast adhesion.

Science.gov (United States)

Pareta, Rajesh; Yang, Lei; Kothari, Abhishek; Sirinrath, Sirivisoot; Xiao, Xingcheng; Sheldon, Brian W; Webster, Thomas J

2010-10-01

Diamond coatings with superior chemical stability, antiwear, and cytocompatibility properties have been considered for lengthening the lifetime of metallic orthopedic implants for over a decade. In this study, an attempt to tailor the surface properties of diamond films on titanium to promote osteoblast (bone forming cell) adhesion was reported. The surface properties investigated here included the size of diamond surface features, topography, wettability, and surface chemistry, all of which were controlled during microwave plasma enhanced chemical-vapor-deposition (MPCVD) processes using CH4-Ar-H2 gas mixtures. The hardness and elastic modulus of the diamond films were also determined. H2 concentration in the plasma was altered to control the crystallinity, grain size, and topography of the diamond coatings, and specific plasma gases (O2 and NH3) were introduced to change the surface chemistry of the diamond coatings. To understand the impact of the altered surface properties on osteoblast responses, cell adhesion tests were performed on the various diamond-coated titanium. The results revealed that nanocrystalline diamond (grain sizes diamond and, thus, should be further studied for improving orthopedic applications. Copyright 2010 Wiley Periodicals, Inc. J Biomed Mater Res Part A, 2010.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

Science.gov (United States)

Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

2016-01-01

Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

Quantum transport in boron-doped nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

2008-01-01

Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Sun, S. J.; Varga, M.; Chou, H.; Hsu, H.S.; Kromka, A.; Horák, Pavel

2015-01-01

Roč. 394, Nov (2015), s. 477-480 ISSN 0304-8853 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LD14011 EU Projects: European Commission(XE) COST Action MP1202 HINT Institutional support: RVO:68378271 ; RVO:61389005 Keywords : diamond * nonmetallic ferromagnetic materials * fine-particle systems * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

Science.gov (United States)

Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

2014-03-01

In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

Spectroellipsometric and ion beam analytical investigation of nanocrystalline diamond layers

Energy Technology Data Exchange (ETDEWEB)

Lohner, T., E-mail: lohner@mfa.kfki.h [Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly Thege Miklos ut 29-33 (Hungary); Csikvari, P. [Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Budafoki ut 8 (Hungary); Khanh, N.Q. [Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly Thege Miklos ut 29-33 (Hungary); David, S. [Department of Electronics Technology, Budapest University of Technology and Economics, H-1111 Budapest, Goldmann Gy. ter 3 (Hungary); Horvath, Z.E.; Petrik, P. [Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly Thege Miklos ut 29-33 (Hungary); Hars, G. [Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Budafoki ut 8 (Hungary)

2011-02-28

Optical properties of nanocrystalline and ultrananocrystalline diamond films were studied by ex situ variable angle spectroscopic ellipsometry. The films were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition method. In the experiments Ar, CH{sub 4}, and H{sub 2} gases were used as source gases. Elastic recoil detection analysis was applied to measure the hydrogen content of the deposited layers. Three-layer optical models were constructed for the evaluation of the measured ellipsometric spectra. Besides the Cauchy relation, the effective medium approximation and the Tauc-Lorentz dispersion relation were also used for the modeling of the optical properties of the diamond films. Atomic force microscopy was applied to investigate the surface roughness in function of the deposition conditions.

Spectroellipsometric and ion beam analytical investigation of nanocrystalline diamond layers

International Nuclear Information System (INIS)

Lohner, T.; Csikvari, P.; Khanh, N.Q.; David, S.; Horvath, Z.E.; Petrik, P.; Hars, G.

2011-01-01

Optical properties of nanocrystalline and ultrananocrystalline diamond films were studied by ex situ variable angle spectroscopic ellipsometry. The films were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition method. In the experiments Ar, CH 4 , and H 2 gases were used as source gases. Elastic recoil detection analysis was applied to measure the hydrogen content of the deposited layers. Three-layer optical models were constructed for the evaluation of the measured ellipsometric spectra. Besides the Cauchy relation, the effective medium approximation and the Tauc-Lorentz dispersion relation were also used for the modeling of the optical properties of the diamond films. Atomic force microscopy was applied to investigate the surface roughness in function of the deposition conditions.

Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

International Nuclear Information System (INIS)

Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

2016-01-01

Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

Energy Technology Data Exchange (ETDEWEB)

Galář, P., E-mail: pavel.galar@mff.cuni.cz; Malý, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, Prague 121 16 (Czech Republic); Čermák, J.; Kromka, A.; Rezek, B. [Institute of Physics ASCR v.v.i., Cukrovarnická 10, Prague 160 00 (Czech Republic)

2014-12-14

Hybrid diamond-organic interfaces are considered attractive for diverse applications ranging from electronics and energy conversion to medicine. Here we use time-resolved and time-integrated photoluminescence spectroscopy in visible spectral range (380–700 nm) to study electronic processes in H-terminated nanocrystalline diamond films (NCD) with 150 nm thin, electrochemically deposited polypyrrole (PPy) layer. We observe changes in dynamics of NCD photoluminescence as well as in its time-integrated spectra after polymer deposition. The effect is reversible. We propose a model where the PPy layer on the NCD surface promotes spatial separation of photo-generated charge carriers both in non-diamond carbon phase and in bulk diamond. By comparing different NCD thicknesses we show that the effect goes as much as 200 nm deep inside the NCD film.

Nanocrystalline diamond coatings for machining

Energy Technology Data Exchange (ETDEWEB)

Frank, M.; Breidt, D.; Cremer, R. [CemeCon AG, Wuerselen (Germany)

2007-07-01

This history of CVD diamond synthesis goes back to the fifties of the last century. However, the scientific and economical potential was only gradually recognized. In the eighties, intensive worldwide research on CVD diamond synthesis and applications was launched. Industrial products, especially diamond-coated cutting tools, were introduced to the market in the middle of the nineties. This article shows the latest developments in this area, which comprises nanocrystalline diamond coating structures. (orig.)

Microwave plasma chemical synthesis of nanocrystalline carbon film structures and study their properties

Science.gov (United States)

Bushuev, N.; Yafarov, R.; Timoshenkov, V.; Orlov, S.; Starykh, D.

2015-08-01

The self-organization effect of diamond nanocrystals in polymer-graphite and carbon films is detected. The carbon materials deposition was carried from ethanol vapors out at low pressure using a highly non-equilibrium microwave plasma. Deposition processes of carbon film structures (diamond, graphite, graphene) is defined. Deposition processes of nanocrystalline structures containing diamond and graphite phases in different volume ratios is identified. The solid film was obtained under different conditions of microwave plasma chemical synthesis. We investigated the electrical properties of the nanocrystalline carbon films and identified it's from various factors. Influence of diamond-graphite film deposition mode in non-equilibrium microwave plasma at low pressure on emission characteristics was established. This effect is justified using the cluster model of the structure of amorphous carbon. It was shown that the reduction of bound hydrogen in carbon structures leads to a decrease in the threshold electric field of emission from 20-30 V/m to 5 V/m. Reducing the operating voltage field emission can improve mechanical stability of the synthesized film diamond-graphite emitters. Current density emission at least 20 A/cm2 was obtained. Nanocrystalline carbon film materials can be used to create a variety of functional elements in micro- and nanoelectronics and photonics such as cold electron source for emission in vacuum devices, photonic devices, cathodoluminescent flat display, highly efficient white light sources. The obtained graphene carbon net structure (with a net size about 6 μm) may be used for the manufacture of large-area transparent electrode for solar cells and cathodoluminescent light sources

Ion-implantation of erbium into the nanocrystalline diamond thin films

Czech Academy of Sciences Publication Activity Database

Nekvindová, P.; Babchenko, Oleg; Cajzl, J.; Kromka, Alexander; Macková, Anna; Malinský, Petr; Oswald, Jiří; Prajzler, Václav; Remeš, Zdeněk; Varga, Marián

2016-01-01

Roč. 18, 7-8 (2016), s. 679-684 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : nanocrystalline diamond * optical waveguides * erbium * luminescence * ion implantation * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.449, year: 2016

Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

Energy Technology Data Exchange (ETDEWEB)

Liu Xuezhang [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Wei Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yu Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yang Taiming; Zhai Hao [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

2013-01-15

Highlights: Black-Right-Pointing-Pointer Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. Black-Right-Pointing-Pointer The nucleation density was increased to 10{sup 11} cm{sup -2}. Black-Right-Pointing-Pointer Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. Black-Right-Pointing-Pointer Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp{sup 3}-bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10{sup 11} cm{sup -2}, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

International Nuclear Information System (INIS)

Liu Xuezhang; Wei Qiuping; Yu Zhiming; Yang Taiming; Zhai Hao

2013-01-01

Highlights: ► Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. ► The nucleation density was increased to 10 11 cm −2 . ► Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. ► Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp 3 -bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10 11 cm −2 , and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

Novel morphology of chemical vapor deposited diamond films

Energy Technology Data Exchange (ETDEWEB)

Tang, C.J. [I3N and Department of Physics, University of Aveiro (Portugal); Jiangsu Key Laboratory for Advanced Functional Materials and Department of Physics, Changshu Institute of Technology, Changshu (China); TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Fernandes, A.J.S.; Abe, I.; Pinto, J.L. [I3N and Department of Physics, University of Aveiro (Portugal); Gracio, J. [TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Buijnsters, J.G. [Institute for Molecules and Materials (IMM), Radboud University Nijmegen (Netherlands)

2010-04-15

We have obtained simultaneously nanocrystalline and {l_brace}100{r_brace} faceted large-grained polycrystalline diamond films not only on different substrates but also on the same substrate in only one deposition run using a novel approach for substrate arrangement. Furthermore, interesting unusual morphologies and microstructures composed by non-faceted nanostructures and terminated with large smooth {l_brace}100{r_brace} facet-like belt are found near the edges of the top square sample. The morphology variation is likely caused by the so called edge effect, where a strong variation in temperature is also present. We have modelled the temperature distribution on the substrates by computer simulations using the finite element method. The novel feature, namely the coexistence of oval non-faceted nanocrystalline diamond grains and large smooth {l_brace}100{r_brace} facet-like belt in one diamond grain, is in the transition from {l_brace}100{r_brace} faceted polycrystalline diamond to cauliflower-like nanocrystalline diamond. The formation mechanism is discussed based on the temperature analysis and other simulation results described in the literature. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

Science.gov (United States)

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

UV-laser treatment of nanodiamond seeds - a valuable tool for modification of nanocrystalline diamond films properties

International Nuclear Information System (INIS)

Vlček, J; Fitl, P; Vrňata, M; Fekete, L; Taylor, A; Fendrych, F

2013-01-01

This work aimed to study the UV-laser treatment of precursor (i.e. nanodiamond (ND) seeds on silicon substrates) and its influence on the properties of grown nanocrystalline diamond (NCD) films. Pulsed Nd:YAG laser operating at the fourth harmonic frequency (laser fluence E L = 250 mJ cm -2 , pulse duration 5 ns) was used as a source, equipped with an optical system for focusing laser beam onto the sample, allowing exposure of a local spot and horizontal patterning. The variable parameters were: number of pulses (from 5 to 400) and the working atmosphere (He, Ar and O 2 ). Ablation and/or graphitization of seeded nanodiamond particles were observed. Further the microwave plasma-enhanced chemical vapour deposition was employed to grow NCD films on exposed and non-exposed areas of silicon substrates. The size, shape and density distribution of laser-treated nanodiamond seeds were observed by atomic force microscopy (AFM) and their chemical composition by x-ray photoelectron spectroscopy (XPS) analysis. The resulting NCD films (uniform thickness of 400 nm) were characterized by: Raman spectroscopy to analyse occurrence of graphitic phase, and AFM to observe morphology and surface roughness. The highest RMS roughness (∼85 nm) was achieved when treating the precursor in He atmosphere. Horizontal microstructures of diamond films were fabricated.

STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY

Directory of Open Access Journals (Sweden)

Mária Domonkos

2014-10-01

Full Text Available In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The structuring of the diamond films is performed using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition, mask preparation (by the standard Langmuir-Blodgett method, mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma  using different plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of processed diamond films is characterized by scanning electron microscopy and atomic force microscope. The potential applications of such diamond structures in various fields of nanotechnology are also briefly discussed.

The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

Energy Technology Data Exchange (ETDEWEB)

Chen, Huang-Chin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Chen, Shih-Show [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Information Technology and Mobile Communication, Taipei College of Maritime Technology, Tamsui, New-Taipei, Taiwan 251 (China); Wang, Wei-Cheng; Lin, I-Nan; Chang, Ching-Lin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Lee, Chi-Young [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Guo, Jinghua [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2013-06-15

The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f{sub c}= 5.0 Multiplication-Sign 10{sup 12} ions/cm{sup 2}) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp{sup 2}-bonded phase ({pi}{sup *}-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value.

Pressure effects on the dissipative behavior of nanocrystalline diamond microelectromechanical resonators

International Nuclear Information System (INIS)

Santos, J T; Chu, V; Conde, J P; Holz, T; Fernandes, A J S; Costa, F M

2015-01-01

Diamond-based microelectromechanical resonators have the potential of enhanced performance due to the chemical inertness of the diamond structural layer and its high Young’s modulus, high wear resistance, low thermal expansion coefficient, and very high thermal conductivity. In this work, the resonance frequency and quality factor of MEMS resonators based on nanocrystalline diamond films are characterized under different air pressures. The dynamic behavior of 50–300 μm long linear bridges and double ended tuning forks, with resonance frequencies between 0.5 and 15 MHz and quality factors as high as 50 000 are described as a function of measurement pressure from high vacuum(∼10 mTorr) up to atmospheric conditions. The resonance frequencies and quality factors in vacuum show good agreement with the theoretical models including anchor and thermoelastic dissipation (TED). The Young’s moduli for nanocrystalline diamond films extrapolated from experimental data are between 840–920 GPa. The critical pressure values, at which the quality factor starts decreasing due to dissipation in air, are dependent on the resonator length. Longer structures, with quality factors limited by TED and lower resonance frequencies, have low critical pressures, of the order of 1–10 Torr and go from an intrinsic dissipation, to a molecular dissipation regime and finally to a region of viscous dissipation. Shorter resonators, with higher resonance frequencies and quality factors limited by anchor losses, have higher critical pressures, some higher than atmospheric pressure, and enter directly into the viscous dissipation regime from the intrinsic region. (paper)

Superconductive B-doped nanocrystalline diamond thin films: Electrical transport and Raman spectra

Czech Academy of Sciences Publication Activity Database

Nesládek, M.; Tromson, D.; Mer, Ch.; Bergonzo, P.; Hubík, Pavel; Mareš, Jiří J.

2006-01-01

Roč. 88, č. 23 (2006), 232111/1-232111/3 ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * superconductivity * magnetoresistance * Raman spectroscopy * Fano resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.977, year: 2006

Transparent nanocrystalline diamond coatings and devices

Science.gov (United States)

Sumant, Anirudha V.; Khan, Adam

2017-08-22

A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.

Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

International Nuclear Information System (INIS)

Janssens, S D; Pobedinskas, P; Ruttens, B; D'Haen, J; Nesladek, M; Haenen, K; Wagner, P; Vacik, J; Petrakova, V

2011-01-01

A systematic study on the morphology and electronic properties of thin heavily boron-doped nanocrystalline diamond (NCD) films is presented. The films have nominally the same thickness (∼150 nm) and are grown with a fixed B/C ratio (5000 ppm) but with different C/H ratios (0.5-5%) in the gas phase. The morphology of the films is investigated by x-ray diffraction and atomic force microscopy measurements, which confirm that lower C/H ratios lead to a larger average grain size. Magnetotransport measurements reveal a decrease in resistivity and a large increase in mobility, approaching the values obtained for single-crystal diamond as the average grain size of the films increases. In all films, the temperature dependence of resistivity decreases with larger grains and the charge carrier density and mobility are thermally activated. It is possible to separate the intra- and intergrain contributions for resistivity and mobility, which indicates that in these complex systems Matthiessen's rule is followed. The concentration of active charge carriers is reduced when the boron-doped NCD is grown with a lower C/H ratio. This is due to lower boron incorporation, which is confirmed by neutron depth profiling.

Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

International Nuclear Information System (INIS)

Govindaraju, N.; Singh, R.N.

2011-01-01

Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

Charged micro-patterns on nanocrystalline diamond are well defined by electrical current application

Czech Academy of Sciences Publication Activity Database

Verveniotis, Elisseos; Kromka, Alexander; Rezek, Bohuslav

2012-01-01

Roč. 53, č. 2 (2012), s. 61-67 ISSN 0001-7140 R&D Projects: GA ČR GD202/09/H041; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * thin films * electrostatic charging * AFM * KFM Subject RIV: BM - Solid Matter Physics ; Magnetism

Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD

Czech Academy of Sciences Publication Activity Database

Zhang, G.; Janssens, S.D.; Vanacken, J.; Timmermans, M.; Vacík, Jiří; Ataklti, G.W.; Decelle, W.; Gillijns, W.; Goderis, B.; Haenen, K.; Wagner, P.; Moshchalkov, V.V.

2011-01-01

Roč. 84, č. 21 (2011), 214517/1-214517/10 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10480505 Keywords : Nanocrystalline diamond * Superconducting transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

Nanostructured diamond film deposition on curved surfaces of metallic temporomandibular joint implant

Energy Technology Data Exchange (ETDEWEB)

Fries, Marc D; Vohra, Yogesh K [Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, AL (United States)

2002-10-21

Microwave plasma chemical vapour deposition of nanostructured diamond films was carried out on curved surfaces of Ti-6Al-4V alloy machined to simulate the shape of a temporomandibular joint (TMJ) dental implant. Raman spectroscopy shows that the deposited films are uniform in chemical composition along the radius of curvature of the TMJ condyle. Thin film x-ray diffraction reveals an interfacial carbide layer and nanocrystalline diamond grains in this coating. Nanoindentation hardness measurements show an ultra-hard coating with a hardness value of 60{+-}5 GPa averaged over three samples. (rapid communication)

Function of thin film nanocrystalline diamond-protein SGFET independent of grain size

Czech Academy of Sciences Publication Activity Database

Krátká, Marie; Kromka, Alexander; Ukraintsev, Egor; Ledinský, Martin; Brož, A.; Kalbáčová, M.; Rezek, Bohuslav

166-167, May (2012), s. 239-245 ISSN 0925-4005 R&D Projects: GA ČR GD202/09/H041; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996; GA AV ČR KAN400100701 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * solution-gated field-effect transistors (SGFETs) * fetal bovine serum * osteoblastic cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.535, year: 2012

Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO2 structure

International Nuclear Information System (INIS)

Poghossian, A.; Abouzar, M.H.; Razavi, A.; Baecker, M.; Bijnens, N.; Williams, O.A.; Haenen, K.; Moritz, W.; Wagner, P.; Schoening, M.J.

2009-01-01

A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO 2 as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO 2 layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 μM.

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

International Nuclear Information System (INIS)

Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

2015-01-01

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

Energy Technology Data Exchange (ETDEWEB)

Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

2015-04-15

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

Directory of Open Access Journals (Sweden)

V. Petrák

2011-01-01

Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

Deposition and microstructure of Ti-containing diamond-like carbon nanocomposite films

International Nuclear Information System (INIS)

Yang, Won Jae; Sekino, Tohru; Shim, Kwang Bo; Niihara, Koichi; Auh, Keun Ho

2005-01-01

Ti-containing diamond-like carbon (DLC) films were deposited by plasma decomposition of CH 4 /Ar gas mixtures with an introduction of tetrakis(dimethylamino)titanium (TDMAT, Ti[(CH 3 ) 2 N] 4 ), which was used as a precursor of titanium. The films deposited were found to be nanocomposite coatings consisting of TiN nanocrystalline clusters and amorphous hydrocarbon (a-C:H), indicating that the nanocrystalline clusters were embedded in the DLC matrix. The crystallinity of TiN clusters, as well as the Ti atomic concentrations in the films, increased with an increase of substrate temperature. The substrate temperature applied to form a crystalline phase in the DLC matrix induced a graphitization of amorphous hydrocarbon matrix. The increase of volume fraction of TiN nanocrystalline clusters in the DLC matrix enhanced the mechanical properties of nanostructured coatings, although the graphite-like structural transition of DLC matrix happened due to the applied heating

THIN DIAMOND FILMS FOR SNS H INJECTIONS STRIPPING

International Nuclear Information System (INIS)

SHAW, R.W.; HERR, A.D.; FEIGERLE, C.S.; CUTLER, R.J.; LIAW, C.J.; LEE, Y.Y.

2004-01-01

We have investigated the preparation and testing of thin diamond foils for use in stripping the SNS H - Linac beam. A long useful lifetime for these foils is desirable to improve operational efficiency. Preliminary data presented at PAC 2001 indicated that diamond foils were superior to conventional evaporated carbon foils, exhibiting lifetimes approximately five-fold longer [1]. That work employed a fully supported diamond foil, a format that is not acceptable for the SNS application; at least two edges of the approximately 1 x 1 cm foils must be free standing to allow for beam rastering. Residual stress in a chemical vapor deposited (CVD) diamond foil results in film distortion (scrolling) when the film is released from its silicon growth substrate. We have attacked this problem by initially patterning the surface of CVD growth substrates with a 50 or 100 line/inch trapezoidal grating, followed by conformal diamond film growth on the patterned substrate. Then removal of the substrate by chemical etching produced a foil that possessed improved mechanical integrity due to its corrugation. The high nucleation density required to grow continuous, pinhole free diamond foils of the desired thickness (1 (micro)m, 350 (micro)g/cm 2 ) was achieved by a combination of substrate surface scratching and seeding. A variety of diamond foils have been tested using the BNL 750 keV Radio Frequency Quadrupole H - beam to simulate energy loss in the SNS. Those include flat, corrugated, microcrystalline, and nanocrystalline foils. Foil lifetimes are reported

Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO{sub 2} structure

Energy Technology Data Exchange (ETDEWEB)

Poghossian, A. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)], E-mail: a.poghossian@fz-juelich.de; Abouzar, M.H.; Razavi, A.; Baecker, M. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany); Bijnens, N. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Williams, O.A.; Haenen, K. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Division IMOMEC, IMEC vzw., Diepenbeek (Belgium); Moritz, W. [Humboldt University Berlin, Berlin (Germany); Wagner, P. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Schoening, M.J. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)

2009-10-30

A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO{sub 2} as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO{sub 2} layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 {mu}M.

Comprehensive Evaluation of the Properties of Nanocrystalline Diamond Coatings Grown Using CVD with E/H Field Glow Discharge Stabilization

Directory of Open Access Journals (Sweden)

Iu. Nasieka

2015-01-01

Full Text Available The nanocrystalline diamond films (coatings were prepared using the plasma enhanced chemical vapor deposition (PECVD technique. In this method, direct current (DC glow discharge in the crossed E/H fields was used to activate the gas phase. The diamond coatings were deposited from the working gas mixture CH4/H2 with addition of nitrogen in various concentrations. It was ascertained that addition of N2 to the working gas mixture leads to reduction in the sizes of diamond grains as well as to the substantial decrease in the resistivity of the studied films. The electrophysical data are in good agreement with the changes induced by varying the N2 content in the Raman scattering spectra. The increase in the N2 concentration causes significant lowering of the crystalline diamond related peak and increase in the intensity of the peaks related to the sp2-bonded carbon. These changes in the spectra indicate significant disordering of the structure of prepared films and its uniformity in the nanodiamond film volume. With the great possibility, it is associated with a decrease in the sizes of diamond crystalline grains and tendency of NCD film to amorphization.

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

Science.gov (United States)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

Raman spectroscopy study of the influence of processing conditions on the structure of polycrystalline diamond films

International Nuclear Information System (INIS)

Ramamurti, R.; Shanov, V.; Singh, R.N.; Mamedov, S.; Boolchand, P.

2006-01-01

Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on Si (100) substrates using the H 2 -Ar-CH 4 gases. Raman scattering data, including the peak position, intensity, area, and width, are analyzed in depth and used to obtain the sp 3 - and sp 2 -bonded carbon contents and the nature of internal stresses in the films. Polarization behavior of the Raman peaks is analyzed to assess its role on the quantitative analysis of the diamond films, which suggested that the 1150 cm -1 Raman peak in nanocrystalline diamond films could be attributed to sp 2 -bonded carbon. The role of the H 2 /Ar content in the gas mixture and substrate temperature on the characteristics of the diamond film is studied. Thickness and grain size of diamond films are also determined by scanning electron microscopy and related to the deposition conditions and Raman results. Deposition conditions, which led to highest sp 3 -bonded carbon content and growth rate, are identified

Mask-free surface structuring of micro- and nanocrystalline diamond films by reactive ion plasma etching

Czech Academy of Sciences Publication Activity Database

Domonkos, Mária; Ižák, Tibor; Babchenko, Oleg; Varga, Marián; Hruška, Karel; Kromka, Alexander

2014-01-01

Roč. 6, č. 7 (2014), s. 780-784 ISSN 2164-6627 R&D Projects: GA ČR GAP108/12/0910; GA ČR GAP108/12/0996; GA MPO FR-TI2/736 Institutional support: RVO:68378271 Keywords : micro- and nanocrystalline diamond * capacitively coupled plasma * reactive ion etching * nanostructuring * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

Nanocrystalline diamond coatings for cutting operations; Nanokristalline Diamantschichten fuer die Zerspanung

Energy Technology Data Exchange (ETDEWEB)

Frank, M.; Breidt, D.; Cremer, R. [CemeCon AG, Wuerselen (Germany). Technology

2006-06-15

The history of the CVD diamond synthesis goes back into the fifties. However, the scientific and economical potential was only gradually recognized. In the eighties intensive world-wide research on CVD diamond synthesis and applications were launched. Industrial products, especially diamond-coated cutting tools, were introduced to the market in the middle of the nineties. The article shows the latest developments in this area, which comprises nanocrystalline diamond coating structures. (orig.)

A multilayer innovative solution to improve the adhesion of nanocrystalline diamond coatings

Energy Technology Data Exchange (ETDEWEB)

Poulon-Quintin, A., E-mail: poulon@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Faure, C.; Teulé-Gay, L.; Manaud, J.P. [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

2015-03-15

Highlights: • Improvement of the NCD adhesion on WC-12%Co substrates for tooling applications using a multi-interlayer additional system. • Reduction of the graphite layer thickness and continuity at the interface with the diamond. • Transmission electron microscopy study for a better understanding of the diffusion phenomena occurring at the interfaces. - Abstract: Nano-crystalline diamond (NCD) films grown under negative biased substrates by chemical vapor deposition (CVD) are widely used as surface overlay coating onto cermet WC-Co cutting tools to get better performances. To improve the diamond adhesion to the cermet substrate, suitable multi-layer systems have been added. They are composed of a cobalt diffusion barrier close to the substrate (single and sequenced nitrides layers) coated with a nucleation extra layer to improve the nucleus density of diamond during CVD processing. For all systems, before and after diamond deposition, transmission electron microscopy (TEM) has been performed for a better understanding of the diffusion phenomena occurring at the interfaces and to evaluate the presence of graphitic species at the interface with the diamond. Innovative multilayer system dedicated to the regulation of cobalt diffusion coated with a bilayer system optimized for the carbon diffusion control, is shown as an efficient solution to significantly reduce the graphite layer formation at the interface with the diamond down to 10 nm thick and to increase the adhesion of NCD diamond layer as scratch-tests confirm.

Adhesion of osteoblasts on chemically patterned nanocrystalline diamonds

Czech Academy of Sciences Publication Activity Database

Kalbáčová, M.; Michalíková, Lenka; Barešová, V.; Kromka, Alexander; Rezek, Bohuslav; Kmoch, S.

2008-01-01

Roč. 245, č. 10 (2008), s. 2124-2127 ISSN 0370-1972 R&D Projects: GA AV ČR KAN400100701 Institutional research plan: CEZ:AV0Z10100521 Keywords : cell growth * nanocrystalline diamond * surface termination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.166, year: 2008

Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

Science.gov (United States)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

Simplified procedure for patterned growth of nanocrystalline diamond micro-structures

Czech Academy of Sciences Publication Activity Database

Kromka, Alexander; Babchenko, Oleg; Rezek, Bohuslav; Ledinský, Martin; Hruška, Karel; Potměšil, Jiří; Vaněček, Milan

2009-01-01

Roč. 518, č. 1 (2009), s. 343-347 ISSN 0040-6090 R&D Projects: GA AV ČR KAN400100701; GA AV ČR KAN400100652; GA AV ČR(CZ) IAAX00100902 Institutional research plan: CEZ:AV0Z1010921 Keywords : atomic force microscopy * Raman spectroscopy * nanocrystalline diamond * selective diamond growth * seed layer * patterning Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.727, year: 2009

Boron-doped nanocrystalline diamond electrodes for neural interfaces: in vivo biocompatibility evaluation

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Taylor, Andrew; Fjorback, M.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 10, Mar (2016), 1-9, č. článku 87. ISSN 1662-453X Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * neuroprosthetic interfaces * neural electrodes * boron-doped diamond * titanium nitride * foreign body reaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.566, year: 2016

Development of a templated approach to fabricate diamond patterns on various substrates.

Science.gov (United States)

Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

2014-06-11

We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

Science.gov (United States)

Catledge, Shane Aaron

The primary focus of this dissertation is the investigation of the processing-structure-property relationships of diamond films deposited on Ti-6Al-4V alloy by microwave plasma chemical vapor deposition (MPCVD). By depositing a well-adhered protective layer of diamond on an alloy component, its hardness, wear-resistance, performance, and overall lifetime could be significantly increased. However, due to the large thermal expansion mismatch between the diamond film and metal (and the corresponding residual stress induced in the film), film adhesion is typically unsatisfactory and often results in immediate delamination after processing. Therefore, it is a major goal of this research to improve adhesion of the diamond film to the alloy substrate. Through the use of innovative processing techniques involving MPCVD deposition conditions and methane (CH4), nitrogen (N2), and hydrogen (H2) chemistry, we have achieved diamond films which consistently adhere to the alloy substrate. In addition, we have discovered that, with the appropriate choice of deposition conditions, the film structure can be tailored to range from highly crystalline, well-faceted diamond to nanocrystalline diamond with extremely low surface roughness (as low as 27 nm). The relationship between processing and structure was studied using in-situ optical emission spectroscopy, micro-Raman spectroscopy, surface profilometry, glancing-angle x-ray diffraction, and scanning electron microscopy. We observe that when nitrogen is added to the H2/CH4 feedgas mixture, a carbon-nitrogen (CN) emission band arises and its relative abundance to the carbon dimer (C2) gas species is shown to have a pronounced influence on the diamond film structure. By appropriate choice of deposition chemistry and conditions, we can tailor the diamond film structure and its corresponding properties. The mechanical properties of interest in this thesis are those relating to the integrity of the film/substrate interface, as well as the

Bilirubin adsorption on nanocrystalline titania films

International Nuclear Information System (INIS)

Yang Zhengpeng; Si Shihui; Fung Yingsing

2007-01-01

Bilirubin produced from hemoglobin metabolism and normally conjugated with albumin is a kind of lipophilic endotoxin, and can cause various diseases when its concentration is high. Bilirubin adsorption on the nanocrystalline TiO 2 films was investigated using quartz crystal microbalance, UV-vis and IR techniques, and factors affecting its adsorption such as pH, bilirubin concentration, solution ionic strength, temperature and thickness of TiO 2 films were discussed. The amount of adsorption and parameters for the adsorption kinetics were estimated from the frequency measurements of quartz crystal microbalance. A fresh surface of the nanocrystalline TiO 2 films could be photochemically regenerated because holes and hydroxyl radicals were generated by irradiating the nanocrystalline TiO 2 films with UV light, which could oxidize and decompose organic materials, and the nanocrystalline TiO 2 films can be easily regenerated when it is used as adsorbent for the removal of bilirubin

Benzene oxidation at diamond electrodes: comparison of microcrystalline and nanocrystalline diamonds.

Science.gov (United States)

Pleskov, Yu V; Krotova, M D; Elkin, V V; Varnin, V P; Teremetskaya, I G; Saveliev, A V; Ralchenko, V G

2012-08-27

A comparative study of benzene oxidation at boron-doped diamond (BDD) and nitrogenated nanocrystalline diamond (NCD) anodes in 0.5 M K(2)SO(4) aqueous solution is conducted by using cyclic voltammetry and electrochemical impedance spectroscopy. It is shown by measurements of differential capacitance and anodic current that during the benzene oxidation at the BDD electrode, adsorption of a reaction intermediate occurs, which partially blocks the electrode surface and lowers the anodic current. At the NCD electrode, benzene is oxidized concurrently with oxygen evolution, a (quinoid) intermediate being adsorbed at the electrode. The adsorption and the electrode surface blocking are reflected in the impedance-frequency and impedance-potential complex-plane plots. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and characterization of a nanocrystalline diamond aerogel

Energy Technology Data Exchange (ETDEWEB)

Pauzauskie, Peter J.; Crowhurst, Jonathan C.; Worsley, Marcus A.; Laurence, Ted A.; Kilcoyne, A. L. David; Wang, Yinmin; Willey, Trevor M.; Visbeck, Kenneth S.; Fakra, Sirine C.; Evans, William J.; Zaug, Joseph M.; Satcher, Jr., Joe H.

2011-07-06

Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.

Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds

Czech Academy of Sciences Publication Activity Database

Stehlík, Štěpán; Varga, Marián; Štenclová, Pavla; Ondič, Lukáš; Ledinský, Martin; Pangrác, Jiří; Vaňek, O.; Lipov, J.; Kromka, Alexander; Rezek, Bohuslav

2017-01-01

Roč. 9, č. 44 (2017), s. 38842-38853 ISSN 1944-8244 R&D Projects: GA MŠk(CZ) LD15003; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : detonation nanodiamond * surface chemistry * hydrogenation * zeta potential * nucleation density * nanocrystalline diamond * SiV center Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 7.504, year: 2016

Nanocrystalline diamond protects Zr cladding surface against oxygen and hydrogen uptake: nuclear fuel durability enhancement

Czech Academy of Sciences Publication Activity Database

Škarohlíd, J.; Ashcheulov, Petr; Škoda, R.; Taylor, Andrew; Čtvrtlík, R.; Tomaštík, J.; Fendrych, František; Kopeček, Jaromír; Cháb, Vladimír; Cichoň, Stanislav; Sajdl, P.; Macák, J.; Xu, P.; Partezana, J.M.; Lorinčík, J.; Prehradná, J.; Steinbrück, M.; Kratochvílová, Irena

2017-01-01

Roč. 7, Jul (2017), 1-14, č. článku 6469. ISSN 2045-2322 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR(CZ) GA15-05095S; GA ČR(CZ) GA16-03085S; GA TA ČR TA04020156 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * zirconium alloys * corrosion Subject RIV: JK - Corrosion ; Surface Treatment of Materials OBOR OECD: Coating and films Impact factor: 4.259, year: 2016

Radiation-Induced Damage and Recovery of Ultra-Nanocrystalline Diamond: Toward Applications in Harsh Environments.

Science.gov (United States)

Martin, Aiden A; Filevich, Jorge; Straw, Marcus; Randolph, Steven; Botman, Aurélien; Aharonovich, Igor; Toth, Milos

2017-11-15

Ultra-nanocrystalline diamond (UNCD) is increasingly being used in the fabrication of devices and coatings due to its excellent tribological properties, corrosion resistance, and biocompatibility. Here, we study its response to irradiation with kiloelectronvolt electrons as a controlled model for extreme ionizing environments. Real time Raman spectroscopy reveals that the radiation-damage mechanism entails dehydrogenation of UNCD grain boundaries, and we show that the damage can be recovered by annealing at 883 K. Our results have significant practical implications for the implementation of UNCD in extreme environment applications, and indicate that the films can be used as radiation sensors.

Biofunctionalization of diamond microelectrodes

Energy Technology Data Exchange (ETDEWEB)

Reitinger, Andreas Adam; Lud, Simon Quartus; Stutzmann, Martin; Garrido, Jose Antonio [Walter Schottky Institut, TU Muenchen (Germany); Hutter, Naima Aurelia; Richter, Gerhard; Jordan, Rainer [WACKER-Chair of Macromolecular Chemistry, TU Muenchen (Germany)

2010-07-01

In this work we present two main routes for the biofunctionalization of nanocrystalline diamond films, aiming at the application of diamond microelectrodes as amperometric biosensors. We report on direct covalent grafting of biomolecules on nanocrystalline diamond films via diazonium monophenyls and biphenyls as well as other linker molecules, forming self-assembled monolayers on the diamond surface. Monolayers with different functional head groups have been characterized. Patterning of the available functional groups using electron beam-induced chemical lithography allows the selective preparation of well-localized docking sites for the immobilization of biomolecules. Furthermore, polymer brushes are expected to enable novel paths for designing more advanced biosensing schemes, incorporating multifunctional groups and a higher loading capacity for biomolecules. Here, we focus on the preparation of polymer grafts by self-initiated photografting and photopolymerization. Further chemical modification of the grafted polymer brushes results in the introduction of additional functional molecules, paving the way for the incorporation of more complex molecular structures such as proteins. In a comparative study we investigate the advantages and disadvantages of both approaches.

Diamond film growth with modification properties of adhesion between substrate and diamond film

Directory of Open Access Journals (Sweden)

Setasuwon P.

2004-03-01

Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

Czech Academy of Sciences Publication Activity Database

Ižák, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

2015-01-01

Roč. 129, May (2015), 95-99 ISSN 0927-7765 R&D Projects: GA ČR GAP108/12/0996 Grant - others:AVČR(CZ) M100101209 Institutional support: RVO:68378271 Keywords : field-effect transistors * nanocrystalline diamond * osteoblastic cells * leakage currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.902, year: 2015

Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Papaioannou, S.; Taylor, Andrew; Fekete, Ladislav; Gurevich, L.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 27, č. 5 (2016), s. 90-1-12 ISSN 0957-4530 R&D Projects: GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : protein adsorption * fibroblasts adhesion * nanocrystalline diamond * boron doping * topography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2016

Quartz crystal microbalance gas sensor with nanocrystalline diamond sensitive layer

Czech Academy of Sciences Publication Activity Database

Varga, Marián; Laposa, A.; Kulha, Pavel; Kroutil, J.; Husák, M.; Kromka, Alexander

2015-01-01

Roč. 252, č. 11 (2015), s. 2591-2597 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : gas sensor * nanocrystalline diamond * quartz resonator * thickness shear mode Subject RIV: JB - Sensor s, Measurment, Regulation Impact factor: 1.522, year: 2015

Nanodiamond Films for Applications in Electrochemical Systems

Directory of Open Access Journals (Sweden)

A. F. Azevedo

2012-01-01

Full Text Available The purpose of the present paper is to give an overview on the current development status of nanocrystalline diamond electrodes for electrochemical applications. Firstly, we describe a brief comparison between the general properties of nanocrystalline diamond (undoped and boron-doped and boron-doped microcrystalline diamond films. This is followed by a summary of the nanodiamond preparation methods. Finally, we present a discussion about the undoped and boron-doped nanocrystalline diamond and their characteristics, electrochemical properties, and practical applications.

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

International Nuclear Information System (INIS)

Wang, Xiaoping; Wang, Jinye; Wang, Lijun

2016-01-01

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

Directory of Open Access Journals (Sweden)

Alex Croot

2017-11-01

Full Text Available Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon [Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of); Song, Min-Jung, E-mail: dslim@korea.ac.kr [Center for Advanced Device Materials, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of)

2010-12-17

Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a {zeta}-potential and average particle size of - 60.5 mV and {approx} 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 {+-} 0.4 x 10{sup 11} cm{sup -2}) and smooth surface were consequently fabricated.

Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

International Nuclear Information System (INIS)

Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon; Song, Min-Jung

2010-01-01

Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a ζ-potential and average particle size of - 60.5 mV and ∼ 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 ± 0.4 x 10 11 cm -2 ) and smooth surface were consequently fabricated.

Separation of intra- and intergranular magnetotransport properties in nanocrystalline diamond films on the metallic side of the metal-insulator transition

Czech Academy of Sciences Publication Activity Database

Janssens, S.D.; Pobeidinskas, P.; Vacík, Jiří; Petráková, Vladimíra; Ruttens, B.; D´Haen, J.; Nesládek, M.; Haenen, K.; Wagner, P.

2011-01-01

Roč. 13, č. 9 (2011), 083008/1-083008/17 ISSN 1367-2630 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : Nanocrystalline diamond * Boron * Magnetotransport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.177, year: 2011

XPS and ToF-SIMS investigation of nanocrystalline diamond oxidized surfaces

Energy Technology Data Exchange (ETDEWEB)

Torrengo, S.; Canteri, R.; Dell’Anna, R.; Minati, L. [Fondazione Bruno Kessler, via Sommarive 18, I-38123 Trento (Italy); Pasquarelli, A. [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Speranza, G., E-mail: speranza@fbk.eu [Fondazione Bruno Kessler, via Sommarive 18, I-38123 Trento (Italy)

2013-07-01

This work aims at studying the different chemical bonds formed on hydrogenated nanocrystalline diamond (NCD) films after oxidation. Three different oxidation treatments applied to NCD, namely oxygen plasma, ozone oxidation and piranha solution were investigated using three different analysis techniques namely X-ray photoelectron spectroscopy, UV photoelectron spectroscopy and TOF-secondary ion mass spectrometry. The combination of these techniques allowed us to better discriminate the nature of the carbon oxygen bonds produced by the different oxidation treatments. We demonstrate that the carbon-oxygen bonds induced by UV irradiation possess a different nature with respect to those generated by plasma or piranha solution. In particular the prevalent electrostatic nature of the carbon-oxygen bonds induced by UV irradiation can explain a negative electron affinity recovery upon NCD annealing, not possible in the case of the other two oxidation processes.

XPS and ToF-SIMS investigation of nanocrystalline diamond oxidized surfaces

International Nuclear Information System (INIS)

Torrengo, S.; Canteri, R.; Dell’Anna, R.; Minati, L.; Pasquarelli, A.; Speranza, G.

2013-01-01

This work aims at studying the different chemical bonds formed on hydrogenated nanocrystalline diamond (NCD) films after oxidation. Three different oxidation treatments applied to NCD, namely oxygen plasma, ozone oxidation and piranha solution were investigated using three different analysis techniques namely X-ray photoelectron spectroscopy, UV photoelectron spectroscopy and TOF-secondary ion mass spectrometry. The combination of these techniques allowed us to better discriminate the nature of the carbon oxygen bonds produced by the different oxidation treatments. We demonstrate that the carbon-oxygen bonds induced by UV irradiation possess a different nature with respect to those generated by plasma or piranha solution. In particular the prevalent electrostatic nature of the carbon-oxygen bonds induced by UV irradiation can explain a negative electron affinity recovery upon NCD annealing, not possible in the case of the other two oxidation processes.

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

2011-01-01

Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

Adhesion analysis of polycrystalline diamond films on molybdenum by means of scratch, indentation and sand abrasion testing

Energy Technology Data Exchange (ETDEWEB)

Buijnsters, J.G. [Applied Physics, IMM, Department of Applied Physics, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Shankar, P. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Enckevort, W.J.P. van [Solid State Chemistry, IMM, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Schermer, J.J. [Experimental Solid State Physics III, IMM, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Meulen, J.J. ter [Applied Physics, IMM, Department of Applied Physics, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands)]. E-mail: htmeulen@sci.kun.nl

2005-03-01

Diamond films have been grown by hot-filament chemical vapour deposition (CVD) on molybdenum substrates under different growth conditions. The films grown with increasing substrate temperatures show a higher interconnection of diamond grains, whereas increasing methane concentrations in the 0.5-4.0% range lead to a transition from micro- towards nanocrystalline films. X-ray diffraction analysis shows Mo{sub 2}C interlayer formation. Indentation, scratch and sand erosion tests are used to evaluate the adhesion strength of the diamond films. Using steel ball indenters (diameter 750 {mu}m), indentation and scratch adhesion tests are performed up to final loads of 200 N. Upon indentation, the load values at which diamond film failure such as flaking and detachment is first observed, increase for increasing temperatures in the deposition temperature range of 450-850 deg C. The scratch adhesion tests show critical load values in the range of 16-40 N normal load for films grown for 4 h. In contrast, diamond films grown for 24 h at a methane concentration of 0.5% do not show any failure at all upon scratching up to 75 N. Film failure upon indenting and scratching is also found to decrease for increasing methane concentration in the CVD gas mixture. The sand abrasion tests show significant differences in coating failure for films grown at varying CH{sub 4}/H{sub 2} ratios. In contrast to the other tests, here best coating performance is observed for the films deposited with a methane concentration of 4%.

Thin diamond films for tribological applications

International Nuclear Information System (INIS)

Wong, M.S.; Meilunas, R.; Ong, T.P.; Chang, R.P.H.

1989-01-01

Diamond films have been deposited on Si, Mo and many other substrates by microwave and radio frequency plasma enhanced chemical vapor deposition. Although the adhesion between the diamond film and most of the metal substrates is poor due to residual thermal stress from the mismatch of thermal expansion coefficients, the authors have developed processes to promote the growth of uniform and continuous diamond films with enhanced adhesion to metal substrates for tribological applications. The tribological properties of these films are measured using a ring-on-block tribotester. The coefficients of friction of diamond films sliding against a 52100 steel ring under the same experimental conditions are found to be significantly different depending on the morphology, grain size and roughness of the diamond films. However, under all cases tested, it is found that for uniform and continuous diamond films with small grain size of 1-3 micrometers, the coefficient of friction of the diamond film sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

Science.gov (United States)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

Diamond network: template-free fabrication and properties.

Science.gov (United States)

Zhuang, Hao; Yang, Nianjun; Fu, Haiyuan; Zhang, Lei; Wang, Chun; Huang, Nan; Jiang, Xin

2015-03-11

A porous diamond network with three-dimensionally interconnected pores is of technical importance but difficult to be produced. In this contribution, we demonstrate a simple, controllable, and "template-free" approach to fabricate diamond networks. It combines the deposition of diamond/β-SiC nanocomposite film with a wet-chemical selective etching of the β-SiC phase. The porosity of these networks was tuned from 15 to 68%, determined by the ratio of the β-SiC phase in the composite films. The electrochemical working potential and the reactivity of redox probes on the diamond networks are similar to those of a flat nanocrystalline diamond film, while their surface areas are hundreds of times larger than that of a flat diamond film (e.g., 490-fold enhancement for a 3 μm thick diamond network). The marriage of the unprecedented physical/chemical features of diamond with inherent advantages of the porous structure makes the diamond network a potential candidate for various applications such as water treatment, energy conversion (batteries or fuel cells), and storage (capacitors), as well as electrochemical and biochemical sensing.

Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

Science.gov (United States)

Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

2014-02-01

The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation

Czech Academy of Sciences Publication Activity Database

Frgala, Z.; Jašek, O.; Karásková, M.; Zajíčková, L.; Buršíková, V.; Franta, D.; Matějková, Jiřina; Rek, Antonín; Klapetek, P.; Buršík, Jiří

2006-01-01

Roč. 56, Suppl. B (2006), s. 1218-1223 ISSN 0011-4626 R&D Projects: GA ČR(CZ) GA202/05/0607 Institutional research plan: CEZ:AV0Z20650511; CEZ:AV0Z20410507 Keywords : nanocrystalline diamond * plasma enhanced chemical vapor deposition * self-bias Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.568, year: 2006

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Influence of nanocrystalline diamond on resonant properties of gold plasmonic antennas

Czech Academy of Sciences Publication Activity Database

Kvapil, M.; Kromka, Alexander; Rezek, Bohuslav; Kalousek, R.; Křápek, V.; Dub, P.; Šikola, T.

2016-01-01

Roč. 213, č. 6 (2016), 1564-1571 ISSN 1862-6300 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : antenna resonance wavelength * electric field enhancement * FDTD * nanocrystalline diamond * plasmonic antenna Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

Nanocrystalline diamond in carbon implanted SiO{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Tsoi, K.A.; Prawer, S.; Nugent, K.W.; Walker, R. J.; Weiser, P.S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

Nanocrystalline diamond in carbon implanted SiO{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Tsoi, K A; Prawer, S; Nugent, K W; Walker, R J; Weiser, P S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

Directory of Open Access Journals (Sweden)

Ana Amélia Rodrigues

2013-02-01

Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Galář, P.; Čermák, Jan; Malý, P.; Kromka, Alexander; Rezek, Bohuslav

2014-01-01

Roč. 116, č. 22 (2014), "223103-1"-"223103-6" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : polypyrrole * nanocrystalline diamond * photoluminescence spectroscopy * opto-electronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Thick Nano-Crystalline Diamond films for fusion applications

Energy Technology Data Exchange (ETDEWEB)

Dawedeit, Christoph [Technical Univ. of Munich (Germany)

2010-06-30

This Diplomarbeit deals with the characterization of 9 differently grown diamond samples. Several techniques were used to determine the quality of these specimens for inertial confinement fusion targets. The quality of chemical vapor deposition diamond is usually considered in terms of the proportion of sp3-bonded carbon to sp2-bonded carbon in the sample. For fusion targets smoothness, Hydrogen content and density of the diamonds are further important characteristics. These characteristics are analyzed in this thesis. The research for thesis was done at Lawrence Livermore National Laboratory in collaboration with the Fraunhofer Institut für angewandte Festkörperphysik Freiburg, Germany. Additionally the Lehrstuhl fuer Nukleartechnik at Technical University of Germany supported the work.

Ultra-nanocrystalline diamond electrodes: optimization towards neural stimulation applications.

Science.gov (United States)

Garrett, David J; Ganesan, Kumaravelu; Stacey, Alastair; Fox, Kate; Meffin, Hamish; Prawer, Steven

2012-02-01

Diamond is well known to possess many favourable qualities for implantation into living tissue including biocompatibility, biostability, and for some applications hardness. However, conducting diamond has not, to date, been exploited in neural stimulation electrodes due to very low electrochemical double layer capacitance values that have been previously reported. Here we present electrochemical characterization of ultra-nanocrystalline diamond electrodes grown in the presence of nitrogen (N-UNCD) that exhibit charge injection capacity values as high as 163 µC cm(-2) indicating that N-UNCD is a viable material for microelectrode fabrication. Furthermore, we show that the maximum charge injection of N-UNCD can be increased by tailoring growth conditions and by subsequent electrochemical activation. For applications requiring yet higher charge injection, we show that N-UNCD electrodes can be readily metalized with platinum or iridium, further increasing charge injection capacity. Using such materials an implantable neural stimulation device fabricated from a single piece of bio-permanent material becomes feasible. This has significant advantages in terms of the physical stability and hermeticity of a long-term bionic implant.

Structure and properties of diamond and diamond-like films

Energy Technology Data Exchange (ETDEWEB)

Clausing, R.E. [Oak Ridge National Lab., TN (United States)

1993-01-01

This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

Toroidal plasma enhanced CVD of diamond films

International Nuclear Information System (INIS)

Zvanya, John; Cullen, Christopher; Morris, Thomas; Krchnavek, Robert R.; Holber, William; Basnett, Andrew; Basnett, Robert; Hettinger, Jeffrey

2014-01-01

An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp 3 peak has a narrow spectral width (FWHM 12 ± 0.5 cm −1 ) and that negligible amounts of the sp 2 band are present, indicating good-quality diamond films

Surface smoothening effects on growth of diamond films

Science.gov (United States)

Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

2018-04-01

We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

2015-01-01

Roč. 17, č. 2 (2015), s. 1165-1172 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.449, year: 2015

Texture-dependent twin formation in nanocrystalline thin Pd films

International Nuclear Information System (INIS)

Wang, B.; Idrissi, H.; Shi, H.; Colla, M.S.; Michotte, S.; Raskin, J.P.; Pardoen, T.; Schryvers, D.

2012-01-01

Nanocrystalline Pd films were produced by electron-beam evaporation and sputter deposition. The electron-beam-evaporated films reveal randomly oriented nanograins with a relatively high density of growth twins, unexpected in view of the high stacking fault energy of Pd. In contrast, sputter-deposited films show a clear 〈1 1 1〉 crystallographic textured nanostructure without twins. These results provide insightful information to guide the generation of microstructures with enhanced strength/ductility balance in high stacking fault energy nanocrystalline metallic thin films.

Low-temperature phenomena in highly doped grained diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Nesládek, Miloš

2009-01-01

Roč. 9, č. 6 (2009), s. 3689-3694 ISSN 1533-4880 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond films * granular structure * superconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2009

Grain boundary effects in nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Nesládek, Miloš

2008-01-01

Roč. 205, č. 9 (2008), 2163-2168 ISSN 1862-6300 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond film * grain boundary * superconductivity * noise * ballistic transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.205, year: 2008

Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Babchenko, Oleg; Varga, Marián; Stuchlík, Jiří; Jirásek, Vít; Prajzler, Václav; Nekvindová, P.; Kromka, Alexander

2016-01-01

Roč. 618, Nov (2016), s. 130-133 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-05053S Grant - others:AV ČR(CZ) MOST-15-04 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : hydrogenated amorphous silicon * nanocrystalline diamond * planar waveguides Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.879, year: 2016

Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro- and nanocrystalline diamond films

NARCIS (Netherlands)

Buijnsters, J.G.; Tsigkourakos, M.C.; Hantschel, T.; Gomes, F.O.V.; Nuytten, T.; Favia, P.; Bender, H; Arstila, K.; Celis, JP; Vandervorst, W

2016-01-01

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped

Silver film on nanocrystalline TiO{sub 2} support: Photocatalytic and antimicrobial ability

Energy Technology Data Exchange (ETDEWEB)

Vukoje, Ivana D., E-mail: ivanav@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Tomašević-Ilić, Tijana D., E-mail: tommashev@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Zarubica, Aleksandra R., E-mail: zarubica2000@yahoo.com [Department of Chemistry, Faculty of Science and Mathematics, University of Niš, Višegradska 33, 18000 Niš (Serbia); Dimitrijević, Suzana, E-mail: suzana@tmf.bg.ac.rs [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Budimir, Milica D., E-mail: mickbudimir@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Vranješ, Mila R., E-mail: mila@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Šaponjić, Zoran V., E-mail: saponjic@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Nedeljković, Jovan M., E-mail: jovned@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia)

2014-12-15

Highlights: • Simple photocatalytic rout for deposition of Ag on nanocrystalline TiO{sub 2} films. • High antibactericidal efficiency of deposited Ag on TiO{sub 2} support. • Improved photocatalytic performance of TiO{sub 2} films in the presence of deposited Ag. - Abstract: Nanocrystalline TiO{sub 2} films were prepared on glass slides by the dip coating technique using colloidal solutions consisting of 4.5 nm particles as a precursor. Photoirradiation of nanocrystalline TiO{sub 2} film modified with alanine that covalently binds to the surface of TiO{sub 2} and at the same time chelate silver ions induced formation of metallic silver film. Optical and morphological properties of thin silver films on nanocrystalline TiO{sub 2} support were studied by absorption spectroscopy and atomic force microscopy. Improvement of photocatalytic performance of nanocrystalline TiO{sub 2} films after deposition of silver was observed in degradation reaction of crystal violet. Antimicrobial ability of deposited silver films on nanocrystalline TiO{sub 2} support was tested in dark as a function of time against Escherichia coli, Staphylococcus aureus, and Candida albicans. The silver films ensured maximum cells reduction of both bacteria, while the fungi reduction reached satisfactory 98.45% after 24 h of contact.

Undoped CVD diamond films for electrochemical applications

International Nuclear Information System (INIS)

Mosinska, Lidia; Fabisiak, Kazimierz; Paprocki, Kazimierz; Kowalska, Magdalena; Popielarski, Pawel; Szybowicz, Miroslaw

2013-01-01

By using different deposition conditions, the CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The object of this article is to summarize and discuss relation between structural, physical and electrochemical properties of different diamond electrodes. The physical properties of the Hot Filament CVD microcrystalline diamond films are analyzed by scanning electron microscopy and Raman spectroscopy. In presented studies two different electrodes were used of the diamond grain sizes around 200 nm and 10 μm, as it was estimated from SEM picture. The diamond layers quality was checked on basis of FWHM (Full width at Half Maximum) of 1332 cm −1 diamond Raman peak. The ratio of sp 3 /sp 2 carbon bonds was determined by 1550 cm −1 G band and 1350 cm −1 D band in the Raman spectrum. The electrochemical properties were analyzed using (CV) cyclic voltammetry measurements in aqueous solutions. The sensitivity of undoped diamond electrodes depends strongly on diamond film quality and concentration of amorphous carbon phase in the diamond layer

Study of carbide-forming element interlayers for diamond nucleation and growth on silicon and WC-Co substrates

International Nuclear Information System (INIS)

Tang, Y.; Li, Y.S.; Yang, Q.; Hirose, A.

2010-01-01

Diamond nucleation and growth on several typical carbide-forming elements (CFE) (Ti, Cr and W) coated Si and WC-Co substrates were studied. The ion beam sputtered CFE interlayers show an amorphous/nanocrystalline microstructure. The diamond formed on the CFE coated substrates shows higher nucleation density and rate and finer grain structure than on uncoated substrates. Consequently, nanocrystalline diamond thin films can be formed on the CFE coated substrates under conventional microcrystalline diamond growth conditions. Among the three tested CFE interlayers, diamond has the highest nucleation density and rate on W layer and the lowest on Ti layer. The diamond nucleation density and rate on CFE coated WC-Co are much higher than those on widely used metal nitride coated WC-Co.

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

Energy Technology Data Exchange (ETDEWEB)

Strąkowska, Paulina [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Beutner, René [Max Bergmann Center, Technische Universität Dresden (Germany); Gnyba, Marcin [Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Zielinski, Andrzej [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Scharnweber, Dieter, E-mail: Dieter.Scharnweber@tu-dresden.de [Max Bergmann Center, Technische Universität Dresden (Germany)

2016-02-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

International Nuclear Information System (INIS)

Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

2016-01-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Microstructure and chemical bond evolution of diamond-like carbon films machined by femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

Wang, Jing; Wang, Chunhui [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Liu, Yongsheng, E-mail: yongshengliu@nwpu.edu.cn [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Cheng, Laifei [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Weinan [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 10068 (China); Zhang, Qing [Science and Technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072 (China); Yang, Xiaojun [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 10068 (China)

2015-06-15

Highlights: • The machining depth was essentially proportional to the laser power. • The well patterned microgrooves and ripple structures with nanoparticles were formed distinctly in the channels. And the number of nanoparticles increased with the processing power as well. • It revealed a conversion from amorphous carbon to nanocrystalline graphite after laser treated with increasing laser power. • It showed that a great decrease of sp{sup 3}/sp{sup 2} after laser treatment. - Abstract: Femtosecond laser is of great interest for machining high melting point and hardness materials such as diamond-like carbon, SiC ceramic, et al. In present work, the microstructural and chemical bond evolution of diamond-like carbon films were investigated using electron microscopy and spectroscopy techniques after machined by diverse femtosecond laser power in air. The results showed the machining depth was essentially proportional to the laser power. The well patterned microgrooves and ripple structures with nanoparticles were formed distinctly in the channels. Considering the D and G Raman band parameters on the laser irradiation, it revealed a conversion from amorphous carbon to nanocrystalline graphite after laser treated with increasing laser power. X-ray photoelectron spectroscopy analysis showed a great decrease of sp{sup 3}/sp{sup 2} after laser treatment.

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Electrodeposition and characterization of nanocrystalline CoNiFe films

Energy Technology Data Exchange (ETDEWEB)

Chen, Y.; Wang, Q.P. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cai, C. [School of Chemistry and chemical engineering, Ningxia University, Yinchuan 750021 (China); Yuan, Y.N. [Department of Materials and Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cao, F.H. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, Z., E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, J.Q. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

2012-02-29

Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} films have been fabricated using cyclic voltammetry technique from the solutions containing sulfate, then characterized by scanning electron microscopy, X-ray diffraction and vibrating sample magnetometer. Meanwhile, Electrochemical Impedance Spectroscopy technique has been employed to probe into the nucleation/growth behavior of Co{sub 45}Ni{sub 10}Fe{sub 24} films. The results show that, the obtained Co{sub 45}Ni{sub 10}Fe{sub 24} film possesses low coercivity of 973.3 A/m and high saturation magnetic flux density of 1.59 Multiplication-Sign 10{sup 5} A/m. Under the experimental conditions, the nucleation/growth process of Co{sub 45}Ni{sub 10}Fe{sub 24} films is mainly under activation control. With the increase of the applied cathodic potential bias, the charge transfer resistance for CoNiFe deposition decreases exponentially. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} film is obtained using cyclic voltammetry technique. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses low coercivity of 973.3 A/m. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses high saturation magnetic flux density. Black-Right-Pointing-Pointer The nucleation/growth process of CoNiFe films is mainly under activation control. Black-Right-Pointing-Pointer The charge transfer resistance for CoNiFe deposition decreases exponentially.

Supported lipid bilayer on nanocrystalline diamond: dual optical and field-effect sensor for membrane disruption

Czech Academy of Sciences Publication Activity Database

Ang, P.K.; Loh, K.P.; Wohland, T.; Nesládek, Miloš; Van Hove, E.

2009-01-01

Roč. 19, č. 1 (2009), s. 109-116 ISSN 1616-301X Institutional research plan: CEZ:AV0Z10100520 Keywords : nanocrystalline diamond * biocompatibility * supported lipid bilayers * biosensors * solution gate field effect transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.990, year: 2009

Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

Directory of Open Access Journals (Sweden)

Chii-Ruey Lin

2014-01-01

Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

Effect of CH4 concentration on the growth behavior, structure, and transparent properties of ultrananocrystalline diamond films synthesized by focused microwave Ar/CH4/H2 plasma jets

International Nuclear Information System (INIS)

Liao, Wen-Hsiang; Lin, Chii-Ruey; Wei, Da-Hua

2013-01-01

The effects of CH 4 concentration (0.5–5%) on the growth mechanisms, nanostructures, and optically transparent properties of ultrananocrystalline diamond (UNCD) films grown from focused microwave Ar/CH 4 /H 2 (argon-rich) plasma jets were systematically studied. The research results indicated that the grain size and surface roughness of the diamond films increased with increasing CH 4 concentration in the plasma jet, however, the nondiamond contents in films would not be correspondingly decreased resulting from the dispersed diamond nanocrystallites in the films synthesized at higher CH 4 concentration. The reason is due to that the relative emission intensity ratios of the C 2 /H α and the CH/C 2 in the plasma jets were increased and decreased with increasing CH 4 concentration, respectively, to lower the etching of nondiamond phase and the renucleation of diamond during synthesis. The studies of transmission electron microscopy demonstrated that, while the CH 4 introduction of 1% into the plasma jet produced the UNCD films with a spherical geometry (4–8 nm) and the CH 4 introduction of 5% into the plasma jet led to the elongated (∼90 nm in length and ∼35 nm in width) grains in the nanocrystalline diamond (NCD) films with a dendrite-like geometry. The transmittance of diamond films was decreased gradually by films transition from UNCD to NCD, resulting from the enhanced surface roughness and nondiamond contents in films to concurrently increase the light scattering and absorption during photon transmission.

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Diamond films: Historical perspective

Energy Technology Data Exchange (ETDEWEB)

Messier, R. [Pennsylvania State Univ., University Park (United States)

1993-01-01

This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH)2 dendritic architectures

International Nuclear Information System (INIS)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo

2012-01-01

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH) 2 dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH) 2 nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Workshop on diamond and diamond-like-carbon films for the transportation industry

Energy Technology Data Exchange (ETDEWEB)

Nichols, F.A.; Moores, D.K. [eds.

1993-01-01

Applications exist in advanced transportation systems as well as in manufacturing processes that would benefit from superior tribological properties of diamond, diamond-like-carbon and cubic boron nitride coatings. Their superior hardness make them ideal candidates as protective coatings to reduce adhesive, abrasive and erosive wear in advanced diesel engines, gas turbines and spark-ignited engines and in machining and manufacturing tools as well. The high thermal conductivity of diamond also makes it desirable for thermal management not only in tribological applications but also in high-power electronic devices and possibly large braking systems. A workshop has been recently held at Argonne National Laboratory entitled ``Diamond and Diamond-Like-Carbon Films for Transportation Applications`` which was attended by 85 scientists and engineers including top people involved in the basic technology of these films and also representatives from many US industrial companies. A working group on applications endorsed 18 different applications for these films in the transportation area alone. Separate abstracts have been prepared.

Polarized Raman spectroscopy of chemically vapour deposited diamond films

International Nuclear Information System (INIS)

Prawer, S.; Nugent, K.W.; Weiser, P.S.

1994-01-01

Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs

Pulsed laser deposition of metallic films on the surface of diamond particles for diamond saw blades

International Nuclear Information System (INIS)

Jiang Chao; Luo Fei; Long Hua; Hu Shaoliu; Li Bo; Wang Youqing

2005-01-01

Ti or Ni films have been deposited on the diamond particle surfaces by pulsed laser deposition. Compressive resistance of the uncoated and coated diamond particles was measured, respectively, in the experiments. The compressive resistance of the Ti-coated diamonds particles was found much higher than that of the uncoated ones. It increased by 39%. The surface morphology is observed by the metallography microscope. The surface of the uncoated diamonds particles had many hollows and flaws, while the surface of Ni-coated diamond particles was flat and smooth, and the surface of Ti-coated diamond particles had some metal masses that stood out of the surface of the Ti-coated film. The components of the metallic films of diamond particles were examined by X-ray diffractometry (XRD). TiC was found formed on the Ti-coated diamond surface, which resulted in increased surface bonding strength between the diamond particles and the Ti films. Meanwhile, TiC also favored improving the bonding strength between the coated diamond particles and the binding materials. Moreover, the bending resistance of the diamond saw blade made of Ti-coated diamond was drastically higher than that of other diamond saw blades, which also played an important role in improving the blade's cutting ability and lifetime. Therefore, it was most appropriate that the diamond saw blade was made of Ti-coated diamond particles rather than other materials

Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

Science.gov (United States)

Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

2013-11-01

To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

High-temperature Infrared Transmission of Free-standing Diamond Films

Directory of Open Access Journals (Sweden)

HEI Li-fu

2017-02-01

Full Text Available The combination of low absorption and extreme mechanical and thermal properties make diamond a compelling choice for some more extreme far infrared (8-12 μm window applications. The optical properties of CVD diamond at elevated temperatures are critical to many of these extreme applications. The infrared transmission of free-standing diamond films prepared by DC arc plasma jet were studied at temperature varied conditions. The surface morphology, structure feature and infrared optical properties of diamond films were tested by optical microscope, X-ray diffraction, laser Raman and Fourier-transform infrared spectroscopy. The results show that the average transmittance for 8-12μm is decreased from 65.95% at 27℃ to 52.5% at 500℃,and the transmittance drop is in three stages. Corresponding to the drop of transmittance with the temperature, diamond film absorption coefficient increases with the rise of temperature. The influence of the change of surface state of diamond films on the optical properties of diamond films is significantly greater than the influence on the internal structure.

Progress of Diamond-like Carbon Films

Directory of Open Access Journals (Sweden)

CHEN Qing-yun

2017-03-01

Full Text Available Diamond-like carbon(DLC films had many unique and outstanding properties such as high thermal conductivity, high hardness, excellent chemical inertness, low friction coefficients and wear coefficients. The properties and combinations were very promising for heat sink, micro-electromechanical devices, radiation hardening, biomedical devices, automotive industry and other technical applications, more research and a lot of attention were attracted in recent years. The research progress of diamond-like films and the nucleation mechanism of film were summarized, and application prospect of DLC films were demonstrated. The aim of this paper is to provide insights on the research trend of DLC films and the industry applications.

Modifying thin film diamond for electronic applications

International Nuclear Information System (INIS)

Baral, B.

1999-01-01

The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

Science.gov (United States)

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

Growth, structural and plasma illumination properties of nanocrystalline diamond-decorated graphene nanoflakes

OpenAIRE

Kamatchi Jothiramalingam, Sankaran; Chang, Ting Hsun; Bikkarolla, Santosh Kumar; Roy, Susanta Sinha; Papakonstantinou, Pagona; Drijkoningen, Sien; Pobedinskas, Paulius; Van Bael, Marlies K.; Tai, Nyan-Hwa; Lin, I. -Nan; Haenen, Ken

2016-01-01

The improvement of the plasma illumination (PI) properties of a microplasma device due to the application of nanocrystalline diamond-decorated graphene nanoflakes (NCD-GNFs) as a cathode is investigated. The improved plasma illumination (PI) behavior is closely related to the enhanced field electron emission (FEE) properties of the NCD-GNFs. The NCD-GNFs possess better FEE characteristics with a low turn-on field of 9.36 V mu m(-1) to induce the field emission, a high FEE current density of 2...

Encapsulation of electroless copper patterns into diamond films

Energy Technology Data Exchange (ETDEWEB)

Pimenov, S.M.; Shafeev, G.A.; Lavrischev, S.V. [General Physics Institute, Moscow (Russian Federation)] [and others

1995-12-31

The results are reported on encapsulating copper lines into diamond films grown by a DC plasma CVD. The process includes the steps of (i) laser activation of diamond for electroless metal plating, (ii) electroless copper deposition selectively onto the activated surface regions, and (iii) diamond regrowth on the Cu-patterned diamond films. The composition and electrical properties of the encapsulated copper lines were examined, revealing high purity and low electrical resistivity of the encapsulated electroless copper.

Electron field emission for ultrananocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

2001-03-01

Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

Sensing of phosgene by a porous-like nanocrystalline diamond layer with buried metallic electrodes

Czech Academy of Sciences Publication Activity Database

Davydova, Marina; Stuchlík, M.; Rezek, Bohuslav; Larsson, K.; Kromka, Alexander

2013-01-01

Roč. 188, NOV (2013), s. 675-680 ISSN 0925-4005 R&D Projects: GA MPO FR-TI2/736; GA ČR GAP108/12/0996 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * phosgene * surface conductivity * gas sensor * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.840, year: 2013 http://dx.doi.org/10.1016/j.snb.2013.07.079

Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

Science.gov (United States)

Lin, Zichao; Sun, Fanghong; Shen, Bin

2016-11-01

Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

HFCVD Diamond-Coated Mechanical Seals

Directory of Open Access Journals (Sweden)

Raul Simões

2018-05-01

Full Text Available A mechanical seal promotes the connection between systems or mechanisms, preventing the escape of fluids to the exterior. Nonetheless, due to extreme working conditions, premature failure can occur. Diamond, due to its excellent properties, is heralded as an excellent choice to cover the surface of these devices and extend their lifetime. Therefore, the main objective of this work was to deposit diamond films over mechanical seals and test the coated seals on a water pump, under real working conditions. The coatings were created by hot filament chemical vapor deposition (HFCVD and two consecutive layers of micro- and nanocrystalline diamond were deposited. One of the main difficulties is the attainment of a good adhesion between the diamond films and the mechanical seal material (WC-Co. Nucleation, deposition conditions, and pre-treatments were studied to enhance the coating. Superficial wear or delamination of the film was investigated using SEM and Raman characterization techniques, in order to draw conclusions about the feasibility of these coatings in the WC-Co mechanical seals with the purpose of increasing their performance and life time. The results obtained gave a good indication about the feasibility of this process and the deposition conditions used, with the mechanical seals showing no wear and no film delamination after a real work environment test.

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Directory of Open Access Journals (Sweden)

Evgeny E. Ashkinazi

2017-06-01

Full Text Available Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC high-pressure high temperature (HPHT diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4% of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

The radiation response of mesoporous nanocrystalline zirconia thin films

Energy Technology Data Exchange (ETDEWEB)

Manzini, Ayelén M.; Alurralde, Martin A. [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina); Giménez, Gustavo [Instituto Nacional de Tecnología Industrial - CMNB, Av. General Paz 5445, 1650 San Martín, Provincia de Buenos Aires (Argentina); Luca, Vittorio, E-mail: vluca@cnea.gov.ar [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina)

2016-12-15

The next generation of nuclear systems will require materials capable of withstanding hostile chemical, physical and radiation environments over long time-frames. Aside from its chemical and physical stability, crystalline zirconia is one of the most radiation tolerant materials known. Here we report the first ever study of the radiation response of nanocrystalline and mesoporous zirconia and Ce{sup 3+}-stabilized nanocrystalline zirconia (Ce{sub 0.1}Zr{sub 0.9}O{sub 2}) thin films supported on silicon wafers. Zirconia films prepared using the block copolymer Brij-58 as the template had a thickness of around 60–80 nm. In the absence of a stabilizing trivalent cation they consisted of monoclinic and tetragonal zirconia nanocrystals with diameters in the range 8–10 nm. Films stabilized with Ce{sup 3+} contained only the tetragonal phase. The thin films were irradiated with iodine ions of energies of 70 MeV and 132 keV at low fluences (10{sup 13} - 10{sup 14} cm{sup −2}) corresponding to doses of 0.002 and 1.73 dpa respectively, and at 180 keV and high fluences (2 × 10{sup 16} cm{sup −2}) corresponding to 82.4 dpa. The influence of heavy ion irradiation on the nanocrystalline structure was monitored through Rietveld analysis of grazing incidence X-ray diffraction (GIXRD) patterns recorded at angles close to the critical angle to ensure minimum contribution to the diffraction pattern from the substrate. Irradiation of the mesoporous nanocrystalline zirconia thin films with 70 MeV iodine ions, for which electronic energy loss is dominant, resulted in slight changes in phase composition and virtually no change in crystallographic parameters as determined by Rietveld analysis. Iodine ion bombardment in the nuclear energy loss regime (132–180 keV) at low fluences did not provoke significant changes in phase composition or crystallographic parameters. However, at 180 keV and high fluences the monoclinic phase was totally eliminated from the GIXRD

Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

Institute of Scientific and Technical Information of China (English)

王小平; 王丽军; 张启仁; 姚宁; 张兵临

2003-01-01

We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

Thermal diffusivity of diamond films using a laser pulse technique

International Nuclear Information System (INIS)

Albin, S.; Winfree, W.P.; Crews, B.S.

1990-01-01

Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

Phenomenological effets of tantalum incorporation into diamond films: Experimental and first principle studies

Energy Technology Data Exchange (ETDEWEB)

Ullah, Mahtab, E-mail: mahtabullah@bzu.edu.pk [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Rana, Anwar Manzoor; Ahmad, E. [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Raza, Rizwan [Department of Physics, COMSATS Institute of Information Technology, Lahore-54000 (Pakistan); Hussain, Fayyaz [Department of Physics, Bahauddin Zakariya University Multan (Pakistan); Hussain, Akhtar; Iqbal, Muhammad [Theoretical Physics Division, PINSTECH, P.O. Nilore, Islamabad (Pakistan)

2016-09-01

Graphical abstract: - Highlights: • Fabrication of tantalum incorporated diamonds films using HFCVD technique. • Decrease in resistivity by increasing tantalum content in diamond thin films. • Electronic structure calculations of tantalum incorporated diamonds films through VASP code. • A rise of bond length and bond angles by addition of tantalum in the diamond lattice. • Confirmation of decrease of resistivity by adding tantalum due to creation of impurity states in the bandgap. - Abstract: Tantalum (Ta) incorporated diamond films are synthesized on silicon substrate by chemical vapor deposition under gas mixture of CH{sub 4} + H{sub 2}. Characterizations of the resulting films indicate that morphology and resistivity of as-grown diamond films are significantly influenced by the process parameters and the amount of tantalum incorporated in the diamond films. XRD plots reveal that diamond films are composed of TaC along with diamond for higher concentration of tantalum and Ta{sub 2}C phases for lower concentration of tantalum. EDS spectra confirms the existence of tantalum in the diamond films. Resistivity measurements illustrate a sudden fall of about two orders of magnitude by the addition of tantalum in the diamond films. Band structure of Ta-incorporated diamond has been investigated based on density functional theory (DFT) using VASP code. Band structure calculations lead to the semiconducting behavior of Ta-incorporated diamond films because of the creation of defects states inside the band gap extending towards conduction band minimum. Present DFT results support experimental trend of resistivity that with the incorporation of tantalum into diamond lattice causes a decrease in the resistivity of diamond films so that tantalum-incorporated diamond films behave like a good semiconductor.

Investigation of nanocrystalline Gd films loaded with hydrogen

KAUST Repository

Hruška, Petr; Čí žek, Jakub; Dobroň, Patrik; Anwand, Wolfgang; Mü cklich, Arndt; Gemma, Ryota; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid

2015-01-01

The present work reports on microstructure studies of hydrogen-loaded nanocrystalline Gd films prepared by cold cathode beam sputtering on sapphire (112¯0) substrates. The Gd films were electrochemically step-by-step charged with hydrogen and the structural development with increasing concentration of absorbed hydrogen was studied by transmission electron microscopy and in-situ   X-ray diffraction using synchrotron radiation. The relaxation of hydrogen-induced stresses was examined by acoustic emission measurements. In the low concentration range absorbed hydrogen occupies preferentially vacancy-like defects at GBs typical for nanocrystalline films. With increasing hydrogen concentration hydrogen starts to occupy interstitial sites. At the solid solution limit the grains gradually transform into the ββ-phase (GdH2). Finally at high hydrogen concentrations xH>2.0xH>2.0 H/Gd, the film structure becomes almost completely amorphous. Contrary to bulk Gd specimens, the formation of the γγ-phase (GdH3) was not observed in this work.

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films - Coating characterization and first cell biological results.

Science.gov (United States)

Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

2016-02-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD>HAp/B-NCD>uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

Evidence for phase separation of ethanol-water mixtures at the hydrogen terminated nanocrystalline diamond surface.

Science.gov (United States)

Janssens, Stoffel D; Drijkoningen, Sien; Saitner, Marc; Boyen, Hans-Gerd; Wagner, Patrick; Larsson, Karin; Haenen, Ken

2012-07-28

Interactions between ethanol-water mixtures and a hydrophobic hydrogen terminated nanocrystalline diamond surface, are investigated by sessile drop contact angle measurements. The surface free energy of the hydrophobic surface, obtained with pure liquids, differs strongly from values obtained by ethanol-water mixtures. Here, a model which explains this difference is presented. The model suggests that, due to a higher affinity of ethanol for the hydrophobic surface, when compared to water, a phase separation occurs when a mixture of both liquids is in contact with the H-terminated diamond surface. These results are supported by a computational study giving insight in the affinity and related interaction at the liquid-solid interface.

One step deposition of highly adhesive diamond films on cemented carbide substrates via diamond/β-SiC composite interlayers

Energy Technology Data Exchange (ETDEWEB)

Wang, Tao; Zhuang, Hao; Jiang, Xin, E-mail: xin.jiang@uni-siegen.de

2015-12-30

Graphical abstract: - Highlights: • Novel diamond/beta-silicon carbide composite gradient interlayers were synthesized. • The interlayer features a cross-sectional gradient with increasing diamond content. • Diamond top layers and the interlayers were deposited in one single process. • The adhesion of the diamond film is drastically improved by employing the interlayer. • The stress was suppressed by manipulating the distribution of diamond and silicon carbide. - Abstract: Deposition of adherent diamond films on cobalt-cemented tungsten carbide substrates has been realized by application of diamond/beta-silicon carbide composite interlayers. Diamond top layers and the interlayers were deposited in one single process by hot filament chemical vapor deposition technique. Two different kinds of interlayers have been employed, namely, gradient interlayer and interlayer with constant composition. The distribution of diamond and beta-silicon carbide phases was precisely controlled by manipulating the gas phase composition. X-ray diffraction and Raman spectroscopy were employed to determine the existence of diamond, beta-silicon carbide and cobalt silicides (Co{sub 2}Si, CoSi) phases, as well as the quality of diamond crystal and the residual stress in the films. Rockwell-C indentation tests were carried out to evaluate the film adhesion. It is revealed that the adhesion of the diamond film is drastically improved by employing the interlayer. This is mainly influenced by the residual stress in the diamond top layer, which is induced by the different thermal expansion coefficient of the film and the substrate. It is even possible to further suppress the stress by manipulating the distribution of diamond and beta-silicon carbide in the interlayer. The most adhesive diamond film on cemented carbide is thus obtained by employing a gradient composite interlayer.

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH){sub 2} dendritic architectures

Energy Technology Data Exchange (ETDEWEB)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo [Korea University, Seoul (Korea, Republic of)

2012-03-15

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH){sub 2} dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH){sub 2} nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Formation of continuous nanocrystalline diamond layer on glass and silicon at low temperatures

Czech Academy of Sciences Publication Activity Database

Kromka, Alexander; Rezek, Bohuslav; Remeš, Zdeněk; Michalka, M.; Ledinský, Martin; Zemek, Josef; Potměšil, Jiří; Vaněček, Milan

2008-01-01

Roč. 14, 7-8 (2008), s. 181-186 ISSN 0948-1907 R&D Projects: GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 1M06002 Grant - others:Marie Curie RTN DRIVE(XE) MRTN-CT-2004-512224 Institutional research plan: CEZ:AV0Z10100521 Keywords : AFM * low temperature growth * nanocrystalline diamond * SEM * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

Repulsive effects of hydrophobic diamond thin films on biomolecule detection

Energy Technology Data Exchange (ETDEWEB)

Ruslinda, A. Rahim, E-mail: ruslindarahim@gmail.com [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Jln Kgr-Alor Setar, Seriab, 01000 Kangar, Perlis (Malaysia); Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Ishiyama, Y. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Penmatsa, V. [Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States); Ibori, S.; Kawarada, H. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan)

2015-02-15

Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m.

Repulsive effects of hydrophobic diamond thin films on biomolecule detection

International Nuclear Information System (INIS)

Ruslinda, A. Rahim; Ishiyama, Y.; Penmatsa, V.; Ibori, S.; Kawarada, H.

2015-01-01

Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m

Effect of power on the growth of nanocrystalline silicon films

International Nuclear Information System (INIS)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma

2008-01-01

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm -1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity

Effect of power on the growth of nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma [Plasma Processed Materials Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: skumar@mail.nplindia.ernet.in

2008-08-20

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm{sup -1} and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

Adherence of diamond films on refractory metal substrates for thermionic applications

International Nuclear Information System (INIS)

Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

1991-01-01

Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

Characterisation of nanocrystalline CdS thin films deposited by CBD

International Nuclear Information System (INIS)

Devi, R.; Sarma, B.K.

2006-01-01

Nanocrystalline thin films of CdS are deposited on glass substrates by chemical bath deposition using polyvinyl alcohol (PVA) matrix solution. Crystallite sizes of the films are determined from X-ray diffraction and are found to vary from 5.4 nm to 7 nm. The band gaps of the nanocrystalline material is determined from the U-V spectrograph and are found to be within the range from 2.6 eV to 2.8 eV as grain size decreases. The band gaps are also determined from the dependence of electrical conductivity of the films with temperature. An increase of molarity decreases the grain size which in turn increases the band gap. (author)

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications.

Science.gov (United States)

Luong, John H T; Male, Keith B; Glennon, Jeremy D

2009-10-01

In recent years, conductive diamond electrodes for electrochemical applications have been a major focus of research and development. The impetus behind such endeavors could be attributed to their wide potential window, low background current, chemical inertness, and mechanical durability. Several analytes can be oxidized by conducting diamond compared to other carbon-based materials before the breakdown of water in aqueous electrolytes. This is important for detecting and/or identifying species in solution since oxygen and hydrogen evolution do not interfere with the analysis. Thus, conductive diamond electrodes take electrochemical detection into new areas and extend their usefulness to analytes which are not feasible with conventional electrode materials. Different types of diamond electrodes, polycrystalline, microcrystalline, nanocrystalline and ultrananocrystalline, have been synthesized and characterized. Of particular interest is the synthesis of boron-doped diamond (BDD) films by chemical vapor deposition on various substrates. In the tetrahedral diamond lattice, each carbon atom is covalently bonded to its neighbors forming an extremely robust crystalline structure. Some carbon atoms in the lattice are substituted with boron to provide electrical conductivity. Modification strategies of doped diamond electrodes with metallic nanoparticles and/or electropolymerized films are of importance to impart novel characteristics or to improve the performance of diamond electrodes. Biofunctionalization of diamond films is also feasible to foster several useful bioanalytical applications. A plethora of opportunities for nanoscale analytical devices based on conducting diamond is anticipated in the very near future.

Adhesive bonding and brazing of nanocrystalline diamond foil onto different substrate materials

Science.gov (United States)

Lodes, Matthias A.; Sailer, Stefan; Rosiwal, Stefan M.; Singer, Robert F.

2013-10-01

Diamond coatings are used in heavily stressed industrial applications to reduce friction and wear. Hot-filament chemical vapour deposition (HFCVD) is the favourable coating method, as it allows a coating of large surface areas with high homogeneity. Due to the high temperatures occurring in this CVD-process, the selection of substrate materials is limited. With the desire to coat light materials, steels and polymers a new approach has been developed. First, by using temperature-stable templates in the HFCVD and stripping off the diamond layer afterwards, a flexible, up to 150 μm thick and free standing nanocrystalline diamond foil (NCDF) can be produced. Afterwards, these NCDF can be applied on technical components through bonding and brazing, allowing any material as substrate. This two-step process offers the possibility to join a diamond layer on any desired surface. With a modified scratch test and Rockwell indentation testing the adhesion strength of NCDF on aluminium and steel is analysed. The results show that sufficient adhesion strength is reached both on steel and aluminium. The thermal stress in the substrates is very low and if failure occurs, cracks grow undercritically. Adhesion strength is even higher for the brazed samples, but here crack growth is critical, delaminating the diamond layer to some extent. In comparison to a sample directly coated with diamond, using a high-temperature CVD interlayer, the brazed as well as the adhesively bonded samples show very good performance, proving their competitiveness. A high support of the bonding layer could be identified as crucial, though in some cases a lower stiffness of the latter might be acceptable considering the possibility to completely avoid thermal stresses which occur during joining at higher temperatures.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

Science.gov (United States)

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

The processing of heteroepitaxial thin-film diamond for electronic applications

International Nuclear Information System (INIS)

McGrath, J.

1998-09-01

Thin film diamond is of particular interest because of its wide applicability, including its potential use in high temperature electronics. This thesis describes a study of some of the processing stages required to exploit thin film diamond as an electronic device. Initial experiments were carried out to optimise bi-metallic contact schemes on orientated diamond film using electrical measurements and chemical analysis. Temperature stability was also investigated and it was concluded that the most favourable ohmic contact scheme is aluminium-on-titanium. Further electrical measurements confirmed that the contribution of resistance made by the contacts themselves to the metal/diamond/metal system overall was acceptably low, specifically 6 Ω.cm 2 for an undoped diamond system and less than 3 x 10 -6 Ω.cm 2 for boron doped diamond. To improve the as-grown resistivity of diamond films, an oxygen/argon plasma etch process was applied. The input parameters of the plasma system were optimised to give the maximum achievable resistivity of 4 x 10 11 Ω.cm. This was attained using a statistical design procedure via analysis of resistivity and etch rate outputs. Having optimised post growth treatment and contact metallisation, undoped and doped orientated diamond films were characterised via voltage and temperature dependencies. It was concluded that the dominant charge transport mechanisms for undoped diamond, nitrogen and boron doped diamond were variable range hopping at low temperatures up to 523 K and grain boundary effects. At higher temperatures, valence or impurity band conduction appeared to be the probable mechanisms with activation energies of 0.23 eV for nitrogen doped diamond and 0.08 eV for boron doped diamond. Preliminary experiments electrical properties of diamond and initial results suggested the presence of a high density of recombination centres. The final stage of experimental research initiated a study of direct electron beam writing lithography to

Characterization of nanocrystalline silicon germanium film and ...

African Journals Online (AJOL)

The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

Releasing cation diffusion in self-limited nanocrystalline defective ceria thin films

DEFF Research Database (Denmark)

Esposito, Vincenzo; Ni, D. W.; Gualandris, Fabrizio

2017-01-01

Acceptor-doped nanocrystalline cerium oxide thin films are mechanically constrained nano-domains, with film/substrate interfacial strain and chemical doping deadlock mass diffusion. In contrast, in this paper we show that chemical elements result in highly unstable thin films under chemical...

Morphology modulating the wettability of a diamond film.

Science.gov (United States)

Tian, Shibing; Sun, Weijie; Hu, Zhaosheng; Quan, Baogang; Xia, Xiaoxiang; Li, Yunlong; Han, Dong; Li, Junjie; Gu, Changzhi

2014-10-28

Control of the wetting property of diamond surface has been a challenge because of its maximal hardness and good chemical inertness. In this work, the micro/nanoarray structures etched into diamond film surfaces by a maskless plasma method are shown to fix a surface's wettability characteristics, and this means that the change in morphology is able to modulate the wettability of a diamond film from weakly hydrophilic to either superhydrophilic or superhydrophobic. It can be seen that the etched diamond surface with a mushroom-shaped array is superhydrophobic following the Cassie mode, whereas the etched surface with nanocone arrays is superhydrophilic in accordance with the hemiwicking mechnism. In addition, the difference in cone densities of superhydrophilic nanocone surfaces has a significant effect on water spreading, which is mainly derived from different driving forces. This low-cost and convenient means of altering the wetting properties of diamond surfaces can be further applied to underlying wetting phenomena and expand the applications of diamond in various fields.

Nanocrystalline iron nitride films with perpendicular magnetic anisotropy

International Nuclear Information System (INIS)

Gupta, Ajay; Dubey, Ranu; Leitenberger, W.; Pietsch, U.

2008-01-01

Nanocrystalline α-iron nitride films have been prepared using reactive ion-beam sputtering. Films develop significant perpendicualr magnetic anisotropy (PMA) with increasing thickness. A comparison of x-ray diffraction patterns taken with scattering vectors in the film plane and out of the film plane provides a clear evidence for development of compressive strain in the film plane with thickness. Thermal annealing results in relaxation of the strain, which correlates very well with the relaxation of PMA. This suggests that the observed PMA is a consequence of the breaking of the symmetry of the crystal structure due to the compressive strain

Nanocrystalline diamond--an excellent platform for life science applications.

Science.gov (United States)

Kloss, Frank R; Najam-Ul-Haq, Muhammed; Rainer, Matthias; Gassner, Robert; Lepperdinger, Günter; Huck, Christian W; Bonn, Günther; Klauser, Frederik; Liu, Xianjie; Memmel, Norbert; Bertel, Erminald; Garrido, Jose A; Steinmüller-Nethl, Doris

2007-12-01

Nanocrystalline diamond (NCD) has recently been successfully utilized in a variety of life science applications. NCD films are favorable and salubrious substrates for cells during cultivation. Therefore NCD has also been employed in tissue engineering strategies. NCD as reported in this contribution was grown by means of a modified hot-filament chemical vapor deposition technique, which results in less than 3% sp2-hybridization and yields grain sizes of 5-20 nm. After production the NCD surface was rather hydrophobic, however it could be efficiently refined to exhibit more hydrophilic properties. Changing of the surface structure was found to be an efficient means to influence growth and differentiation capacity of a variety of cells. The particular needs for any given cell type has to be proven empirically. Yet flexible features of NCD appear to be superior to plastic surfaces which can be hardly changed in quality. Besides its molecular properties, crystal structural peculiarities of NCD appear to influence cell growth as well. In our attempt to facilitate, highly specialized applications in biomedicine, we recently discovered that growth factors can be tightly bound to NCD by mere physisorption. Hence, combination of surface functionalization together with further options to coat NCD with any kind of three-dimensional structure opens up new avenues for many more applications. In fact, high through-put protein profiling of early disease stages may become possible from serum samples, because proteins bound to NCD can now be efficiently analyzed by MALDI/TOF-MS. Given these results, it is to be presumed that the physical properties and effective electrochemical characteristics of NCD will allow tailoring devices suitable for many more diagnostic as well as therapeutic applications.

Correlation of CVD Diamond Electron Emission with Film Properties

Science.gov (United States)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

Laser Raman microprobe spectroscopy as a diagnostic for the characterisation of diamond and diamond like carbon (DLC) thin films

International Nuclear Information System (INIS)

Johnston, C.

1990-10-01

Invariably when manufacturing an artificial diamond film a mixture of carbon is deposited - tetragonally bonded (diamond), trigonally bonded (graphite) and other allotropic crystalline forms and amorphous carbons. This imposes a need for careful analysis to determine exactly what carbon types constitute the films. Raman spectroscopy is particularly sensitive to crystal and atomic structure and has a number of advantages which make it one of the most useful techniques for interrogating diamond and DLC thin films. Although Raman spectroscopy alone cannot fully characterise the film, it can give more information than simply what particular form of carbon or other impurities are present in the film. It can be used to determine the ratio of sp 2 to sp 3 bonding within the film, and to some extent the crystallite or domain size and the internal stress of the film. The use of laser Raman microprobe spectroscopy as a diagnostic tool in the analysis of diamond and DLC thin films is demonstrated for a variety of carbon films on various substrates and the characterisation of these films is discussed. (author)

Characterization of chemical vapour deposited diamond films: correlation between hydrogen incorporation and film morphology and quality

International Nuclear Information System (INIS)

Tang, C J; Neves, A J; Carmo, M C

2005-01-01

In order to tailor diamond synthesized through chemical vapour deposition (CVD) for different applications, many diamond films of different colours and variable quality were deposited by a 5 kW microwave plasma CVD reactor under different growth conditions. The morphology, quality and hydrogen incorporation of these films were characterized using scanning electron microscopy (SEM), Raman and Fourier-transform infrared (FTIR) spectroscopy, respectively. From this study, a general trend between hydrogen incorporation and film colour, morphology and quality was found. That is, as the films sorted by colour gradually become darker, ranging from white through grey to black, high magnification SEM images illustrate that the smoothness of the well defined crystalline facet gradually decreases and second nucleation starts to appear on it, indicating gradual degradation of the crystalline quality. Correspondingly, Raman spectra evidence that the diamond Raman peak at 1332 cm -1 becomes broader and the non-diamond carbon band around 1500 cm -1 starts to appear and becomes stronger, confirming increase of the non-diamond component and decrease of the phase purity of the film, while FTIR spectra show that the CH stretching band and the two CVD diamond specific peaks around 2830 cm -1 rise rapidly, and this indicates that the total amount of hydrogen incorporated into the film increases significantly

Si-related color centers in nanocrystalline diamond thin films

Czech Academy of Sciences Publication Activity Database

Potocký, Štěpán; Holovský, Jakub; Remeš, Zdeněk; Müller, Martin; Kočka, Jan; Kromka, Alexander

2014-01-01

Roč. 251, č. 12 (2014), s. 2603-2606 ISSN 0370-1972 R&D Projects: GA TA ČR TA01011740; GA ČR(CZ) GA14-04790S; GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : chemical vapor deposition * color center * diamond * photoluminescence * plasma Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.489, year: 2014

UV detectors based on epitaxial diamond films grown on single-crystal diamond substrates by vapor-phase synthesis

International Nuclear Information System (INIS)

Sharonov, G.V.; Petrov, S.A.; Bol'shakov, A.P.; Ral'chenko, V.G.; Kazyuchits, N.M.

2010-01-01

The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0,5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology. (authors)

OSL and TL dosimeter characterization of boron doped CVD diamond films

Science.gov (United States)

Gonçalves, J. A. N.; Sandonato, G. M.; Meléndrez, R.; Chernov, V.; Pedroza-Montero, M.; De la Rosa, E.; Rodríguez, R. A.; Salas, P.; Barboza-Flores, M.

2005-04-01

Natural diamond is an exceptional prospect for clinical radiation dosimetry due to its tissue-equivalence properties and being chemically inert. The use of diamond in radiation dosimetry has been halted by the high market price; although recently the capability of growing high quality CVD diamond has renewed the interest in using diamond films as radiation dosimeters. In the present work we have characterized the dosimetric properties of diamond films synthesized by the HFCVD method. The thermoluminescence and the optically stimulated luminescence of beta exposed diamond sample containing a B/C 4000 ppm doping presents excellent properties suitable for dosimetric applications with β-ray doses up to 3.0 kGy. The observed OSL and TL performance is reasonable appropriate to justify further investigation of diamond films as dosimeters for ionizing radiation, specially in the radiotherapy field where very well localized and in vivo and real time radiation dose applications are essential.

Highly stressed carbon film coatings on silicon potential applications

CERN Multimedia

Sharda, T

2002-01-01

The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

Diamond film deposition on WC–Co and steel substrates with a CrN interlayer for tribological applications

International Nuclear Information System (INIS)

Chandran, Maneesh; Hoffman, Alon

2016-01-01

The most renowned property of diamond is its exceptional hardness. By depositing diamond films on tungsten carbide (WC–Co) and steel substrates, the hardness of diamond can be combined with the toughness of these materials, resulting in an excellent wear resistance material for tribological applications. However, poor adhesion of diamond coating on these substrates leads to a lesser lifetime for the diamond coated tools than expected. The prime reasons for the lack of proper adhesion are the preferential formation of graphitic layer at the interface due to the catalytic activities of cobalt/iron and the interfacial residual stresses due to the mismatch in thermal expansion coefficients of diamond (1.5  ×  10 −6 K −1 ) and WC–Co (5.2  ×  10 −6 K −1 ) or steel (12  ×  10 −6 K −1 ). In this review, we discuss the possibility of using a Cr–N interlayer as a diffusion barrier to prevent the catalytic activities of cobalt/iron and also to relax the interfacial residual stresses to some extent to enhance the adhesion of diamond coatings on these substrates. An overview of the most pertinent results of the last two decades, including the recent progress is introduced. We describe in detail how the Cr–N interlayer with the desired properties is fabricated. We give a concise overview of diamond deposition process, including the methods to vary the grain size from microcrystalline to nanocrystalline, which are suitable for some tribological applications. We describe in detail on surface and interface analysis, residual stress measurements, assessment adhesion strength and tribological performance of diamond coated WC–Co and steel substrates using various characterization techniques. We conclude by highlighting the current progress and future perspectives of diamond coatings on these substrates for tribological applications. (topical review)

Spectroscopic diagnostics and modeling of Ar/H2/CH4 microwave discharges used for nanocrystalline diamond deposition

International Nuclear Information System (INIS)

Lombardi, G.; Hassouni, K.; Benedic, F.; Mohasseb, F.; Roepcke, J.; Gicquel, A.

2004-01-01

literature for similar discharges, for gas temperature and C 2 population. The high H-atom densities obtained in this work would indicate that growing nanocrystalline diamond films would experience a very high etching. Simulation results also confirm that sp species would play a key role in the surface chemistry that governs the diamond growth

Investigation of laser ablation of CVD diamond film

Science.gov (United States)

Chao, Choung-Lii; Chou, W. C.; Ma, Kung-Jen; Chen, Ta-Tung; Liu, Y. M.; Kuo, Y. S.; Chen, Ying-Tung

2005-04-01

Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, high hardness value and extreme brittleness have made diamond extremely difficult to be machined by conventional mechanical grinding and polishing. In the present study, the microwave CVD method was employed to produce epitaxial diamond films on silicon single crystal. Laser ablation experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. It was found that during the laser ablation, peaks of the diamond grains were removed mainly by the photo-thermal effects introduced by excimer laser. The diamond structures of the protruded diamond grains were transformed by the laser photonic energy into graphite, amorphous diamond and amorphous carbon which were removed by the subsequent laser shots. As the protruding peaks gradually removed from the surface the removal rate decreased. Surface roughness (Ra) was improved from above 1μm to around 0.1μm in few minutes time in this study. However, a scanning technique would be required if a large area was to be polished by laser and, as a consequence, it could be very time consuming.

γ radiation thermoluminescence performance of HFCVD diamond films

International Nuclear Information System (INIS)

Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Barboza-Flores, M.

2006-01-01

Polycrystalline chemically vapor deposited (CVD) diamond films have been proposed as detectors and dosimeters of ionizing radiation with prospective applications in high-energy photon dosimetry applications. We present a comparison study on the thermoluminescence (TL) properties of two diamond film samples grown by the hot filament CVD method having thickness of 180 and 500 μm and exposed to γ radiation in the 1-300 Gy dose range. The 180 μm thick sample deposited on silicon substrate displayed a TL glow curve peaked at 145 deg. C. The 500 μm, which was a free standing sample, exhibited higher intensity and a well defined first order kinetics TL glow peak around 289 deg. C. Both diamond samples showed a linear dose behavior in the 1-50 Gy range and sublinear behavior for higher doses. The 180 and 500 μm samples presented about 80% and 30% TL losses in a 24 h period, respectively, with both samples showing excellent TL reproducibility. The results indicate that the 500 μm CVD diamond film exhibited a good TL behavior adequate for γ radiation dosimetry

Nanocrystalline CdTe thin films by electrochemical synthesis

Directory of Open Access Journals (Sweden)

Ramesh S. Kapadnis

2013-03-01

Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

International Nuclear Information System (INIS)

Cheng Qijin; Xu, S.

2007-01-01

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

A Review on the Low-Dimensional and Hybridized Nanostructured Diamond Films

Directory of Open Access Journals (Sweden)

Hongdong Li

2015-01-01

Full Text Available In the last decade, besides the breakthrough of high-rate growth of chemical vapor deposited single-crystal diamonds, numerous nanostructured diamond films have been rapidly developed in the research fields of the diamond-based sciences and industrial applications. The low-dimensional diamonds of two-dimensional atomic-thick nanofilms and nanostructural diamond on the surface of bulk diamond films have been theoretically and experimentally investigated. In addition, the diamond-related hybrid nanostructures of n-type oxide/p-type diamond and n-type nitride/p-type diamond, having high performance physical and chemical properties, are proposed for further applications. In this review, we first briefly introduce the three categories of diamond nanostructures and then outline the current advances in these topics, including their design, fabrication, characterization, and properties. Finally, we address the remaining challenges in the research field and the future activities.

Electrophoretic deposition of nanocrystalline TiO2 films on Ti substrates for use in flexible dye-sensitized solar cells

International Nuclear Information System (INIS)

Tan Weiwei; Yin Xiong; Zhou Xiaowen; Zhang Jingbo; Xiao Xurui; Lin Yuan

2009-01-01

Nanocrystalline TiO 2 films were prepared on flexible Ti-metal sheets by electrophoretic deposition followed by chemical treatment with tetra-n-butyl titanate (TBT) and sintering at 450 deg. C. X-ray diffraction (XRD) analysis indicates that TBT treatment led to the formation of additional anatase TiO 2 , which plays an important role in improving the interconnection between TiO 2 particles, as well as the adherence of the film to the substrate, and in modifying the surface properties of the nanocrystalline particles. The effect of TBT treatment on the electron transport in the nanocrystalline films was studied by intensity-modulated photocurrent spectroscopy (IMPS). An increase in the conversion efficiency was obtained for the dye-sensitized solar cells with TBT-treated nanocrystalline TiO 2 films. The cell performance was further optimized by designing nanocrystalline TiO 2 films with a double-layer structure composed of a light-scattering layer and a transparent layer. The light-scattering effect of the double-layer nanocrystalline films was evaluated by diffuse reflectance spectra. Employing the double-layer nanocrystalline films as the photoelectrodes resulted in a significant improvement in the incident photo-to-current conversion efficiency of the corresponding cells due to enhanced solar absorption by light scattering. A high conversion efficiency of 6.33% was measured under illumination with 100 mW cm -2 (AM 1.5) simulated sunlight.

Elastic properties of ultrathin diamond/AlN membranes

International Nuclear Information System (INIS)

Zuerbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.E.; Ambacher, O.; Lebedev, V.

2014-01-01

Nanocrystalline diamond- (NCD) and AlN-based ultrathin single layer and bilayer membranes are investigated towards their mechanical properties. It is shown that chemo-mechanical polishing and heavy boron doping of NCD thin films do not impact the elastic properties of NCD layers as revealed by negligible variations of the NCD Young's modulus (E). In addition, it is demonstrated that the combination of NCD elastic layer and AlN piezo-actuator is highly suitable for the fabrication of mechanically stable ultrathin membranes in comparison to AlN single layer membranes. The elastic parameters of NCD/AlN heterostructures are mainly determined by the outstanding high Young's modulus of NCD (E = 1019 ± 19 GPa). Such ultrathin unimorph membranes allow for fabrication of piezo-actuated AlN/NCD microlenses with tunable focus length. - Highlights: • Mechanical properties of nanocrystalline diamond (NCD) and AlN circular membranes • No influence of polishing of NCD thin films on the mechanical properties of NCD • No influence of heavy boron-doping on the mechanical properties of NCD • Demonstration of mechanically stable piezo-actuated NCD/AlN membranes • Reported performance of AlN/NCD microlenses with adjustable focus length

Panel 2 - properties of diamond and diamond-like-carbon films

Energy Technology Data Exchange (ETDEWEB)

Blau, P.J.; Clausing, R.E. [Oak Ridge National Lab., TN (United States); Ajayi, O.O.; Liu, Y.Y.; Purohit, A. [Argonne National Lab., IL (United States); Bartelt, P.F. [Deere & Co., Moline, IL (United States); Baughman, R.H. [Allied Signal, Morristown, NJ (United States); Bhushan, B. [Ohio State Univ., Columbus (United States); Cooper, C.V. [United Technologies Research Center, East Hartford, CT (United States); Dugger, M.T. [Sandia National Laboratories, Albuquerque, NM (United States); Freedman, A. [Aerodyne Research, Inc., Billerica, MA (United States); Larsen-Basse, J. [National Science Foundation, Washington, DC (United States); McGuire, N.R. [Caterpillar, Peoria, IL (United States); Messier, R.F. [Pennsylvania State Univ., University Park (United States); Noble, G.L.; Ostrowki, M.H. [John Crane, Inc., Morton Grove, IL (United States); Sartwell, B.D. [Naval Research Lab., Washington, DC (United States); Wei, R. [Colorado State Univ., Fort Collins (United States)

1993-01-01

This panel attempted to identify and prioritize research and development needs in determining the physical, mechanical and chemical properties of diamond and diamond-like-carbon films (D/DLCF). Three specific goals were established. They were: (1) To identify problem areas which produce concern and require a better knowledge of D/DLCF properties. (2) To identify and prioritize key properties of D/DLCF to promote transportation applications. (3) To identify needs for improvement in properties-measurement methods. Each of these goals is addressed subsequently.

Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

Czech Academy of Sciences Publication Activity Database

Mikšovský, Jan; Voss, A.; Kozarova, R.; Kocourek, Tomáš; Písařík, Petr; Ceccone, G.; Kulisch, W.; Jelínek, Miroslav; Apostolova, M.D.; Reithmaier, J.P.; Popov, C.

2014-01-01

Roč. 297, APR (2014), s. 95-102 ISSN 0169-4332 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : ultrananocrystalline diamond films * diamond -like carbon films * surface modification * direct contact cell tests Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014 http://www.sciencedirect.com/science/article/pii/S0169433214001251

Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2010-01-01

Full Text Available Four different catalysts, nanodiamond seed, nano-Ni, diamond powder, and mixture of nano-Ni/diamond powder, were used to activate Si wafers for diamond film growth by hot-filament CVD (HFCVD. Diamond crystals were shown to grow directly on both large diamond powder and small nanodiamond seed, but a better crystallinity of diamond film was observed on the ultrasonicated nanodiamond seeded Si substrate. On the other hand, nano-Ni nanocatalysts seem to promote the formation of amorphous carbon but suppress transpolyacetylene (t-PA phases at the initial growth of diamond films. The subsequent nucleation and growth of diamond crystals on the amorphous carbon layer leads to generation of the spherical diamond particles and clusters prior to coalescence into continuous diamond films based on the CH3 addition mechanism as characterized by XRD, Raman, ATR/FT-IR, XPS, TEM, SEM, and AFM techniques. Moreover, a 36% reduction in surface roughness of diamond film assisted by nano-Ni catalyst is quite significant.

Experimental studies of N~+ implantation into CVD diamond thin films

Institute of Scientific and Technical Information of China (English)

辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

1997-01-01

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

2006-01-01

TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

High oxygen nanocomposite barrier films based on xylan and nanocrystalline cellulose

Science.gov (United States)

Amit Saxena; Thomas J. Elder; Jeffrey Kenvin; Arthur J. Ragauskas

2010-01-01

The goal of this work is to produce nanocomposite film with low oxygen permeability by casting an aqueous solution containing xylan, sorbitol and nanocrystalline cellulose. The morphology of the resulting nanocomposite films was examined by scanning electron microscopy and atomic force microscopy which showed that control films containing xylan and sorbitol had a more...

Method for producing fluorinated diamond-like carbon films

Science.gov (United States)

Hakovirta, Marko J.; Nastasi, Michael A.; Lee, Deok-Hyung; He, Xiao-Ming

2003-06-03

Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C.sub.2 H.sub.2) and hexafluoroethane (C.sub.2 F.sub.6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.

Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

International Nuclear Information System (INIS)

Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; Weiner, Brad; Morell, Gerardo

2011-01-01

The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 10 9 sec -1 mV -1 range, linear response in a broad spectral range below 320 nm, photocurrents around ∼10 -5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials' photosensitivity

Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

Science.gov (United States)

1995-01-01

Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

Nanocrystalline SiC film thermistors for cryogenic applications

Science.gov (United States)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Study of the diamond and diamond like films formation and technology development for the films precipitation on solid surface for wear resistance increasing of tools, machine and mechanism parts

International Nuclear Information System (INIS)

Imanbekov, Z.; Bekmuhambetov, E.

1996-01-01

Purpose of the project: The purpose of the project is a development and a creation of an effective technology of the diamond and diamond like films precipitation on materials, including refractory metals, semiconductors and composite on the carbon fibers base. The study method includes the experimental investigation of the base surface structure and properties, preparation of the surface for diamond and diamond like coats growing. The precipitation of above mentioned films will be carried out from the plasma being formed from carbon gas medium at low pressure. The main purposes of the project are: - development of the technology for obtaining the films with specified properties; provision of required rate -of the precipitation; - decreasing of temperature; - manufacturing of the functioning laboratory stand with further developing of a pilot- - commercial plant for diamond and diamond like coating. It is supposed to develop a method of the monocrystal diamond films growing, that are useful for semiconductor devices manufacturing The methods: A thermo-emission and ECR methods will be used for investigation of the diamond and diamond like films formation and growth processes. The plant that will be used for the first method is a two electrode construction. Refractory metals (W,Re) being heated up to 2500 Kelvin degrees, are usually used as an actuating electrode. The second one is a base on which the precipitation is carrying out. Refractory metals, steel, silicon can be used as the base. Actuating medium is a mixture of carbon and inert gases. The second method is based on a principle of a plasma formation with use of 2.45 GHz Shf radiation power. An ECR-plasma is formed in conjunction with magnetic field in the actuating chamber. This method allows to precipitate high quality films at lower pressure. Expected results: The main purpose of the project is to assimilate the high effective technology of the diamond and diamond like films precipitation on different

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

International Nuclear Information System (INIS)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

1996-01-01

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

Stacking fault-mediated ultrastrong nanocrystalline Ti thin films

Science.gov (United States)

Wu, K.; Zhang, J. Y.; Li, G.; Wang, Y. Q.; Cui, J. C.; Liu, G.; Sun, J.

2017-11-01

In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ˜20 GPa nm1/2, to an ultrahigh strength of ˜4.4 GPa, approaching ˜50% of its ideal strength.

Applications of diamond films and related materials; Proceedings of the 1st International Conference, Auburn, AL, Aug. 17-22, 1991

Science.gov (United States)

Tzeng, Yonhua (Editor); Yoshikawa, Manasori (Editor); Murakawa, Masao (Editor); Feldman, Albert (Editor)

1991-01-01

The present conference discusses the nucleation and growth of diamond from hydrocarbons, the cutting tool performance of CVD thick-film diamond, the characterization of CVD diamond grinding powder, industrial applications of crystalline diamond-coated tools, standardized SEM tribometry of diamond-coated substrates, residual stress in CVD diamond films, the optical properties of CVD diamond films, polycrystalline diamond films for optical applications, and diamond growth on ferrous metals. Also discussed are ion beam-irradiation smoothing of diamond films, electronic circuits on diamond substrates, diamond-laminated surfaces for evaporative spray cooling, electron devices based on the unique properties of diamond, diamond cold cathodes, thin-film diamond microstructure applications, Schottky diodes from flame-grown diamond, diamond films for thermionic applications, methods of diamond nucleation and selective deposition, high-rate/large-area diamond film production, halogen-assisted diamond growth, the economics of diamond technology, and the optical and mechanical properties of diamondlike films.

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors

Czech Academy of Sciences Publication Activity Database

Krátká, Marie; Babchenko, Oleg; Ukraintsev, Egor; Vachelová, Jana; Davídková, Marie; Vandrovcová, Marta; Kromka, Alexander; Rezek, Bohuslav

2016-01-01

Roč. 63, Mar (2016), 186-191 ISSN 0925-9635 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 ; RVO:67985823 Keywords : diamond thin films * field effect transistors * proteins * cells * gamma irradiation * atomic force microscope * biosensors Subject RIV: BO - Biophysics Impact factor: 2.561, year: 2016

Growing of synthetic diamond boron-doped films for analytical applications

International Nuclear Information System (INIS)

Barros, Rita de Cassia Mendes de; Suarez-Iha, Maria Encarnacion Vazquez; Corat, Evaldo Jose; Iha, Koshun

1999-01-01

Chemical vapor deposition (CVD) technology affords the possibility of producing synthetic diamond film electrodes, with several advantageous properties due the unique characteristics of diamond. In this work, we present the study of boron-doped diamond films growth on molybdenum and silicon substrates, using boron trioxide as dopant in a filament assisted CVD reactor. The objective was to obtain semiconductor diamond for use as electrode. The samples were characterized by scanning electron microscopy and Raman spectroscopy to confirm morphology and doping levels. We have assembled electrodes with the various samples, Pt, Mo, Si and diamond, by utilizing brass and left as base materials. The electrodes were tested in neutralization potentiometric titrations for future use in electroanalysis. Boron-doped electrodes have very good performance compared with Pt, widely used in analytical chemistry. (author)

Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Ragini Raj, E-mail: raginirajsingh@gmail.com [Department of Physics, Bhopal University, Bhopal-462026 (India); Department of Physical Electronics, Iby and Aladar Fleishman Faculty of Engineering, Tel-Aviv University, Tel-Aviv-69978 (Israel); Painuly, Diksha [Centre for Nanoscience and Nanotechnology, University of Kerala, Thiruanantpuram, Kerala (India); Pandey, R.K. [Department of Physics, Bhopal University, Bhopal-462026 (India)

2009-07-15

Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 {+-} 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

Science.gov (United States)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Initial damage processes for diamond film exposure to hydrogen plasma

International Nuclear Information System (INIS)

Deslandes, A.; Guenette, M.C.; Samuell, C.M.; Karatchevtseva, I.; Ionescu, M.; Cohen, D.D.; Blackwell, B.; Corr, C.; Riley, D.P.

2013-01-01

Graphical abstract: -- Highlights: • Exposing chemical vapour deposited (CVD) diamond films in a recently constructed device, MAGPIE, specially commissioned to simulate fusion plasma conditions. • Non-diamond material is etched from the diamond. • There is no hydrogen retention observed, which suggests diamond is an excellent candidate for plasma facing materials. • Final structure of the surface is dependent on synergistic effects of etching and ion-induced structural change. -- Abstract: Diamond is considered to be a possible alternative to other carbon based materials as a plasma facing material in nuclear fusion devices due to its high thermal conductivity and resistance to chemical erosion. In this work CVD diamond films were exposed to hydrogen plasma in the MAGnetized Plasma Interaction Experiment (MAGPIE): a linear plasma device at the Australian National University which simulates plasma conditions relevant to nuclear fusion. Various negative sample stage biases of magnitude less than 500 V were applied to control the energies of impinging ions. Characterisation results from SEM, Raman spectroscopy and ERDA are presented. No measureable quantity of hydrogen retention was observed, this is either due to no incorporation of hydrogen into the diamond structure or due to initial incorporation as a hydrocarbon followed by subsequent etching back into the plasma. A model is presented for the initial stages of diamond erosion in fusion relevant hydrogen plasma that involves chemical erosion of non-diamond material from the surface by hydrogen radicals and damage to the subsurface region from energetic hydrogen ions. These results show that the initial damage processes in this plasma regime are comparable to previous studies of the fundamental processes as reported for less extreme plasma such as in the development of diamond films

Photocatalytic properties of nanocrystalline TiO2 thin film with Ag additions

International Nuclear Information System (INIS)

Chang, C.-C.; Lin, C.-K.; Chan, C.-C.; Hsu, C.-S.; Chen, C.-Y.

2006-01-01

In the present study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin coating technique. While, by introducing polystyrene (PS) microspheres, porous TiO 2 /Ag films were obtained after calcining at a temperature of 500 o C. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry, and scanning electron microscopy to reveal the structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. After 500 o C calcination, the microstructure of PS-TiO 2 film without Ag addition exhibited a sponge-like microstructure while significant sintering effect was noticed with Ag additions and the films exhibited a porous microstructure. Meanwhile, coalescence of nanocrystalline anatase-phase TiO 2 can be observed with respect to the sharpening of XRD diffraction peaks. The photodegradation of porous TiO 2 doped with 1 mol% Ag exhibited the best photocatalytic efficiency where 72% methylene blue can be decomposed after UV exposure for 12 h

Structural and nanomechanical properties of nanocrystalline carbon thin films for photodetection

Energy Technology Data Exchange (ETDEWEB)

Rawal, Ishpal [Department of Physics, Kirorimal College, University of Delhi, Delhi 110007 (India); Panwar, Omvir Singh, E-mail: ospanwar@mail.nplindia.ernet.in; Tripathi, Ravi Kant; Chockalingam, Sreekumar [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, Avanish Kumar [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Mahesh [Ultrafast Optoelectronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2015-05-15

This paper reports the effect of helium gas pressure upon the structural, nanomechanical, and photoconductive properties of nanocrystalline carbon thin (NCT) films deposited by the filtered cathodic jet carbon arc technique. High-resolution transmission electron microscopy images confirm the nanocrystalline nature of the deposited films with different crystallite sizes (3–7 nm). The chemical structure of the deposited films is further analyzed by x-ray photoelectron spectroscopy and Raman spectroscopy, which suggest that the deposited films change from graphitelike to diamondlike, increasing in sp{sup 3} content, with a minor change in the dilution of the inert gas (helium). The graphitic character is regained upon higher dilution of the helium gas, whereupon the films exhibit an increase in sp{sup 2} content. The nanomechanical measurements show that the film deposited at a helium partial pressure of 2.2 × 10{sup −4} has the highest value of hardness (37.39 GPa) and elastic modulus (320.50 GPa). At a light intensity of 100 mW/cm{sup 2}, the NCT films deposited at 2.2 × 10{sup −4} and 0.1 mbar partial pressures of helium gas exhibit good photoresponses of 2.2% and 3.6%, respectively.

Effect of enhanced C2 growth chemistry on nanodiamond film deposition

International Nuclear Information System (INIS)

Teii, Kungen; Ikeda, Tomohiro

2007-01-01

A route to high-purity nanocrystalline diamond films from C 2 dimers and related mechanisms have been investigated by enhancing C 2 growth chemistry in Ar-rich microwave plasmas. Efficient C 2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20 nm grains with a distinct visible-Raman peak of diamond. C 2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C 2 over nondiamond growth from CH x (x=0-3) and large radicals

Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

Energy Technology Data Exchange (ETDEWEB)

Gareso, P. L., E-mail: pgareso@gmail.com; Rauf, N., E-mail: pgareso@gmail.com; Juarlin, E., E-mail: pgareso@gmail.com [Department of Physics, Faculty of Mathematics and Natural Sciences, Hasanuddin University, Makassar 90245 (Indonesia); Sugianto,; Maddu, A. [Department of Physics, Faculty of Mathematics and Natural Sciences, Bogor Institute of Culture, IPB Bogor (Indonesia)

2014-09-25

Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.

Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

Science.gov (United States)

Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

2018-06-01

Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

International Nuclear Information System (INIS)

Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

2008-01-01

Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

Application of heat treatment and dispersive strengthening concept in interlayer deposition to enhance diamond film adherence

Energy Technology Data Exchange (ETDEWEB)

Lin Chiiruey [Tatung Inst. of Technol., Taipei (Taiwan, Province of China). Dept. of Mech. Eng.; Kuo Chengtzu; Chang Rueyming [Institute of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 30050 (Taiwan, Province of China)

1997-10-31

Two different deposition processes were carried out to enhance adherence of diamond films on WC+3-5%Co substrate with Ti-Si as the interlayer. One process can be called two-step diamond deposition process. Another process can be called interlayer heat treatment process. Diamond films were deposited by a microwave plasma chemical vapor deposition system. Ti and Si interlayer are deposited by DC sputter and an E-gun, respectively. Film morphologies, interface structure and film quality were examined by SEM, XRD, Auger electron spectroscopy and Raman spectroscopy. The residual stresses and adhesion strengths of the films were determined by Raman spectroscopy and indentation adhesion testing, respectively. Comparing the regular one-step diamond deposition process with the present two different new processes, the average dP/dX values, which are a measure of the adherence of the film, are 354 kgf/mm, 494 kgf/mm and 787 kgf/mm, respectively. In other words, the interlayer heat treatment process gives the best film adherence on average. For the two-step diamond deposition process, the interlayer thickness and the percent diamond surface coverage of the first diamond deposition step are the main parameters, and there exists an optimum Ti thickness and percent diamond coverage for the best film adherence. The main contribution to better film adherence is not a large difference in residual stress, but is due to the following reasons. The interlayer heat treatment can transform amorphous Si to polycrystalline Si, and may form strong TiC and SiC bonding. The polycrystalline Si and the diamond particles from the first diamond deposition step can be an effective seeds to enhance diamond nucleation. (orig.) 11 refs.

Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

Science.gov (United States)

Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

2018-05-01

Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

International Nuclear Information System (INIS)

Liu, J.L.; Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.

2013-01-01

Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm 2 /V s and the carrier density of 1.096 × 10 13 cm −2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (f T ) of 5 GHz and the maximum oscillation frequency (f max ) of 6 GHz at V GS = −0.5 V and V DS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.

Transformation from amorphous to nano-crystalline SiC thin films ...

Indian Academy of Sciences (India)

Administrator

phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

Transparent nanocrystalline ZnO films prepared by spin coating

Energy Technology Data Exchange (ETDEWEB)

Berber, M. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany)]. E-mail: mete.berber@sustech.de; Bulto, V. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Kliss, R. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Hahn, H. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Forschungszentrum Karlsruhe, Institute for Nanotechnology, Postfach 3640, 76021 Karlsruhe (Germany); Joint Research Laboratory Nanomaterials, TU Darmstadt, Institute of Materials Science, Petersenstr. 23, 64287 Darmstadt (Germany)

2005-09-15

Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents.

Transparent nanocrystalline ZnO films prepared by spin coating

International Nuclear Information System (INIS)

Berber, M.; Bulto, V.; Kliss, R.; Hahn, H.

2005-01-01

Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents

Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

Science.gov (United States)

Patra, Chandralina; Das, Debajyoti

2018-04-01

Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

TSC response of irradiated CVD diamond films

CERN Document Server

Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

1999-01-01

CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Frank, Otakar; Drijkoningen, S.; Haenen, K.; Mortet, Vincent; Kavan, Ladislav

2016-01-01

Roč. 6, č. 56 (2016), s. 51387-51393 ISSN 2046-2069 R&D Projects: GA ČR GA13-31783S Grant - others:AV ČR(CZ) G.0456.1 Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Amorphous films * Cyclic voltammetry * Diamond films Subject RIV: CG - Electrochemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 3.108, year: 2016

Magnetotransport in nanocrystalline SmB6 thin films

Directory of Open Access Journals (Sweden)

Jie Yong

2015-07-01

Full Text Available SmB6 has been predicted to be a prototype of topological Kondo insulator (TKI but its direct experimental evidence as a TKI is still lacking to date. Here we report on our search for the signature of a topological surface state and investigation of the effect of disorder on transport properties in nanocrystalline SmB6 thin films through longitudinal magnetoresistance and Hall coefficient measurements. The magnetoresistance (MR at 2 K is positive and linear (LPMR at low field and become negative and quadratic at higher field. While the negative part is understood from the reduction of the hybridization gap due to Zeeman splitting, the positive dependence is similar to what is observed in other topological insulators (TI. We conclude that the LPMR is a characteristic of TI and is related to the linear dispersion near the Dirac cone. The Hall resistance shows a sign change around 50K. It peaks and becomes nonlinear around 10 K then decreases below 10 K. This indicates that carriers with opposite signs emerge below 50 K. These properties indicate that the surface states are robust and probably topological in our nanocrystalline films.

SiC interlayer by laser-cladding on WC-Co substrates for CVD diamond deposition

Energy Technology Data Exchange (ETDEWEB)

Contin, Andre; Fraga, Mariana Amorim; Vieira, Jose; Trava-Airoldi, Vladimir Jesus; Corat, Evaldo Jose, E-mail: andrecontin@yahoo.com.br [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Campos, Raonei Alves [Universidade Federal do Sul e Sudeste do Para (UNIFESSPA), Belem, PA (Brazil); Vasconcelos, Getulio [Instituto de Estudos Avancados (IEA), Sao Jose dos Campos, SP (Brazil)

2016-07-01

Full text: Despite their huge industrial potential and commercial interest, the direct diamond coating on cemented carbide (WC-Co) is limited, mainly because of the catalytic effect of Cobalt (Co) and the high difference in thermal expansion coefficient [1]. This results in poor adherence between diamond and WC-Co. In addition, the low diamond film adhesion to the cemented carbide useless for machining applications. Removal of Co binder from the substrate surface by superficial etching is one of the techniques used to improve the adhesion between diamond and WC-Co. For the present study, diamond films were deposited on WC-Co substrates with an intermediate barrier to block the Co diffusion to the surface substrate. The laser cladding process produced the SiC barrier, in which a powder layer is melted by a laser irradiation to create the coating on the substrate. The use of laser cladding is the novel method for an intermediate barrier for cemented carbides. The advantages of laser cladding include a faster processing speed, precision, versatility. We reported the application of pretreatment method called ESND (Electrostatic self-assembly seeding of nanocrystalline diamond). The nucleation density was around 10{sup 11}part/cm{sup 2}. Diamond films were grown by Hot Filament Chemical Vapor Deposition. Characterization of samples included Field Emission Gun-Scanning Electron Microscopy (FEG-SEM), Energy Dispersive X-ray (EDX), X-ray diffraction (XRD) and Raman Scattering Spectroscopy. Results showed that laser irradiation formed stable Co compounds in the interfacial barrier. It is because nucleation and good quality of diamond film since the cobalt are no longer free to migrate to the surface during the CVD diamond deposition. Reference: [1] Y. X. Cui, B. Shen, F. H. Sun. Diamond deposition on WC–Co substrate with amorphous SiC interlayer, Surface Engineering, 30, (2014) 237-243. (author)

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Strain-delocalizing effect of a metal substrate on nanocrystalline Ni film

Energy Technology Data Exchange (ETDEWEB)

Qi, Dexing [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Zhou, Jianqiu, E-mail: zhouj@njut.edu.cn [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Department of Mechanical Engineering, Wuhan Institute of Technology, Wuhan, Hubei Province 430070 (China); Liu, Hongxi; Dong, Shuhong [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Wang, Ying [Department of Mechanical and Electronic Engineering, Suzhou Institute of Industrial Technology, Suzhou, Jiangsu 215104 (China)

2015-07-29

Uniaxial tensile test and scanning electron microscopy (SEM) are introduced to study the tensile properties of electrodeposited nanocrystalline nickel/coarse-grained copper (N/C) composite in this paper. Compared to the stress strain response of pure nanocrystalline (NC) nickel (Ni), the tensile ductility of N/C composite is enhanced significantly. Based on the experimental results, a multi-phase composite model is proposed to investigate the micromechanical behaviors of the NC Ni film and N/C composite plate. The constitutive models are implemented into ABAQUS/Explicit in the form of VUMAT subroutine. A series of numerical simulations are carried out and the predications were in good agreement with experimental results. It can be concluded that the coarse-grained (CG) substrate work well in suppressing the strain localization in the NC Ni film.

Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

Energy Technology Data Exchange (ETDEWEB)

Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

2017-03-15

We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

Directory of Open Access Journals (Sweden)

Patrik Rath

2013-05-01

Full Text Available Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

Influence of argon dilution on growth and properties of hydrogenated nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Parashar, A. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India); Kumar, Sushil; Gope, Jhuma; Rauthan, C.M.S.; Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Hashmi, S.A. [Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India)

2010-05-15

The effect of argon concentration (66-87%) in total gaseous mixture (SiH{sub 4}+H{sub 2}+Ar) on growth and properties of hydrogenated nanocrystalline silicon films deposited by RF (13.56 MHz) PECVD technique was investigated. Raman and XRD measurements revealed increasing argon fraction favored enhancement of crystallinity, enlargement of crystallites and relaxation of strained bonds. Photoluminescence spectra of nc-Si:H films exhibited two radiative transitions in the photon energy ranges of 2.8-3.1 eV and 1.6-2.1 eV. The high energy PL peaks are attributed to surface effect of the films whereas peaks in the range of 1.6-2.1 eV are due to nanocrystallinity in the films. Argon dilution also helped enhancement of deposition rate and conductivity of the films. A film deposited at 81% of argon fraction possesses high crystallinity (75%), conductivity in the order of 10{sup -5} ({omega} cm){sup -1}, size of the crystallite (Raman=12 nm, XRD=18 nm), and low residual stress (125 MPa). (author)

Characteristics of RuO2-SnO2 nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

International Nuclear Information System (INIS)

Kim, Han-Ki; Choi, Sun-Hee; Yoon, Young Soo; Chang, Sung-Yong; Ok, Young-Woo; Seong, Tae-Yeon

2005-01-01

The characteristics of RuO 2 -SnO 2 nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O 2 /Ar ambient have RuO 2 -SnO 2 nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film in 0.5 M H 2 SO 4 liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm 2 μm. This suggests that the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor

Nanocrystalline zinc ferrite films studied by magneto-optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lišková-Jakubisová, E., E-mail: liskova@karlov.mff.cuni.cz; Višňovský, Š. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague (Czech Republic); Široký, P.; Hrabovský, D.; Pištora, J. [Nanotechnology Center, VŠB-Technical University of Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba (Czech Republic); Sahoo, Subasa C. [Department of Physics, Central University of Kerala, Kasaragod, Kerala 671314 (India); Prasad, Shiva [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Venkataramani, N. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Bohra, Murtaza [Okinawa Institute of Science and Technology Graduate University (OIST), Okinawa (Japan); Krishnan, R. [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS-UVSQ, 45 Avenue des Etats-Unis, 78935 Versailles (France)

2015-05-07

Ferrimagnetic Zn-ferrite (ZnFe{sub 2}O{sub 4}) films can be grown with the ferromagnetic resonance linewidth of 40 Oe at 9.5 GHz without going through a high temperature processing. This presents interest for applications. The work deals with laser ablated ZnFe{sub 2}O{sub 4} films deposited at O{sub 2} pressure of 0.16 mbar onto fused quartz substrates. The films about 120 nm thick are nanocrystalline and their spontaneous magnetization, 4πM{sub s}, depends on the nanograin size, which is controlled by the substrate temperature (T{sub s}). At T{sub s} ≈ 350 °C, where the grain distribution peaks around ∼20–30 nm, the room temperature 4πM{sub s} reaches a maximum of ∼2.3 kG. The films were studied by magnetooptical polar Kerr effect (MOKE) spectroscopy at photon energies between 1 and 5 eV. The complementary characteristics were provided by spectral ellipsometry (SE). Both the SE and MOKE spectra confirmed ferrimagnetic ordering. The structural details correspond to those observed in MgFe{sub 2}O{sub 4} and Li{sub 0.5}Fe{sub 2.5}O{sub 4} spinels. SE experiments confirm the insulator behavior. The films display MOKE amplitudes somewhat reduced with respect to those in Li{sub 0.5}Fe{sub 2.5}O{sub 4} and MgFe{sub 2}O{sub 4} due to a lower degree of spinel inversion and nanocrystalline structure. The results indicate that the films are free of oxygen vacancies and Fe{sup 3+}-Fe{sup 2+} exchange.

Polycrystalline diamond film UV detectors for excimer lasers

International Nuclear Information System (INIS)

Ralchenko, V G; Savel'ev, A V; Konov, Vitalii I; Mazzeo, G; Spaziani, F; Conte, G; Polyakov, V I

2006-01-01

Photoresistive metal-semiconductor-metal detectors based on polycrystalline diamond films are fabricated for recording cw and pulsed UV radiation. The detectors have a high spectral selectivity (the UV-to-VIS response ratio is ∼10 5 ) and a temporal resolution of the order of 10 9 s. 'Solar-blind' photostable diamond detectors are promising for applications in UV lithography, laser micromachining, medicine, and space research. (letters)

Radiation defects and electron disordering in proton-irradiated diamond films

International Nuclear Information System (INIS)

Maschenko, V.E.; Soloviev, G.G.

1991-01-01

The absorption spectra are studied in the region of the fundamental absorption band and its longwave boundary for the 0.6 μm thick diamond films deposited onto Al 2 O 3 single crystal underlayers and irradiated by 100 keV and 50 keV protons at fluences of 10 13 -10 16 cm -2 . The E 0 β (6.10-5.9eV) and E 0 α (5.51-5.43eV) maxima and the exponential tails towards lower energies are resolved in the spectra of initial films. The halfwidths of the maxima and a weak temperature dependence of their parameters and of the Urbach tail slope are indicative of disordering of the film structure. The intrinsic maxima near and above the indirect absorption boundary in diamond Γ 25 '-Δ are identified with transitions in the disordered cubic and hexagonal phases of the diamond films. The proton irradiation stimulates the intensity redistribution of the intrinsic maxima, the absorption enhancement, and the change of the Urbach tail slope. The character of radiolysis has been found to depend on the composition of the nonirradiated carbon films and on proton fluence. (author). 8 refs.; 3 figs

Ultrananocrystalline diamond film as an optimal cell interface for biomedical applications.

Science.gov (United States)

Bajaj, Piyush; Akin, Demir; Gupta, Amit; Sherman, Debby; Shi, Bing; Auciello, Orlando; Bashir, Rashid

2007-12-01

Surfaces of materials that promote cell adhesion, proliferation, and growth are critical for new generation of implantable biomedical devices. These films should be able to coat complex geometrical shapes very conformally, with smooth surfaces to produce hermetic bioinert protective coatings, or to provide surfaces for cell grafting through appropriate functionalization. Upon performing a survey of desirable properties such as chemical inertness, low friction coefficient, high wear resistance, and a high Young's modulus, diamond films emerge as very attractive candidates for coatings for biomedical devices. A promising novel material is ultrananocrystalline diamond (UNCD) in thin film form, since UNCD possesses the desirable properties of diamond and can be deposited as a very smooth, conformal coating using chemical vapor deposition. In this paper, we compared cell adhesion, proliferation, and growth on UNCD films, silicon, and platinum films substrates using different cell lines. Our results showed that UNCD films exhibited superior characteristics including cell number, total cell area, and cell spreading. The results could be attributed to the nanostructured nature or a combination of nanostructure/surface chemistry of UNCD, which provides a high surface energy, hence promoting adhesion between the receptors on the cell surface and the UNCD films.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

High energy ion beam induced modifications in diamond and diamond like carbon thin films

International Nuclear Information System (INIS)

Dilawar, N.; Sah, S.; Mehta, B.R.; Vankar, V.D.

1996-01-01

Diamond and DLC films deposited using hot-filament chemical vapour deposition technique at various parameters were irradiated with 50 MeV Si 4+ ions. The resulting microstructural changes were studied using X-ray diffraction and scanning electron microscopy. All the samples showed the development of β-SiC and hexagonal carbon phases at the expense of the diamond/DLC phase. The ERD analysis was carried out to determine the hydrogen concentration and its distribution in DLC films. The absolute hydrogen concentration in DLC samples is of the order of 10 22 atoms/cm 3 which gets depleted on irradiation. The DLC samples show a clear dependence of hydrogen content on the deposition parameters. (author)

Ultrafast photoluminescence spectroscopy of H- and O-terminated nanocrystalline diamond films

Czech Academy of Sciences Publication Activity Database

Dzurňák, B.; Trojánek, F.; Preclíková, J.; Kromka, Alexander; Rezek, Bohuslav; Malý, P.

2011-01-01

Roč. 20, č. 8 (2011), 1155-1159 ISSN 0925-9635 R&D Projects: GA AV ČR KAN400100701; GA ČR GD202/09/H041 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond * femtosecond photoluminescence spectroscopy * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.913, year: 2011

Electrochromic properties of nanocrystalline MoO3 thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

2008-01-01

Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

International Nuclear Information System (INIS)

Lohmiller, Jochen; Spolenak, Ralph; Gruber, Patric A.

2014-01-01

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

Energy Technology Data Exchange (ETDEWEB)

Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

2014-02-10

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

Diamond films deposited by oxygen-enhanced linear plasma chemistry

Czech Academy of Sciences Publication Activity Database

Kromka, Alexander; Babchenko, Oleg; Ižák, Tibor; Varga, Marián; Davydova, Marina; Krátká, Marie; Rezek, Bohuslav

2013-01-01

Roč. 5, č. 6 (2013), s. 509-514 ISSN 2164-6627 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Institutional support: RVO:68378271 Keywords : diamond films * process gas chemistry * pulsed microwave plasma * surface conductivity of diamond Subject RIV: BM - Solid Matter Physics ; Magnetism

Effective extraction of photoluminescence from a diamond layer with a photonic crystal

Czech Academy of Sciences Publication Activity Database

Ondič, Lukáš; Dohnalová, Kateřina; Ledinský, Martin; Kromka, Alexander; Babchenko, Oleg; Rezek, Bohuslav

2011-01-01

Roč. 5, č. 1 (2011), s. 346-350 ISSN 1936-0851 R&D Projects: GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR KJB100100903 Grant - others:AV ČR(CZ) M100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : photonic crystals * spontaneous emission * light extraction * diffraction * nanocrystalline diamond films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 10.774, year: 2011

Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

Science.gov (United States)

Rajpal, Shashikant; Kumar, S. R.

2018-04-01

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

2008-04-30

Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

Electrophoretic Nanocrystalline Graphene Film Electrode for Lithium Ion Battery

International Nuclear Information System (INIS)

Kaprans, Kaspars; Bajars, Gunars; Kucinskis, Gints; Dorondo, Anna; Mateuss, Janis; Gabrusenoks, Jevgenijs; Kleperis, Janis; Lusis, Andrejs

2015-01-01

Graphene sheets were fabricated by electrophoretic deposition method from water suspension of graphene oxide followed by thermal reduction. The formation of nanocrystalline graphene sheets has been confirmed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrochemical performance of graphene sheets as anode material for lithium ion batteries was evaluated by cycling voltammetry, galvanostatic charge-discharge cycling, and electrochemical impedance spectroscopy. Fabricated graphene sheets exhibited high discharge capacity of about 1120 mAh·g −1 and demonstrated good reversibility of lithium intercalation and deintercalation in graphene sheet film with capacity retention over 85 % after 50 cycles. Results show that nanocrystalline graphene sheets prepared by EPD demonstrated a high potential for application as anode material in lithium ion batteries

High quality factor gigahertz frequencies in nanomechanical diamond resonators

OpenAIRE

Gaidarzhy, Alexei; Imboden, Matthias; Mohanty, Pritiraj; Rankin, Janet; Sheldon, Brian W.

2007-01-01

We report actuation and detection of gigahertz-range resonance frequencies in nano-crystalline diamond mechanical resonators. High order transverse vibration modes are measured in coupled-beam resonators exhibiting frequencies up to 1.441 GHz. The cantilever-array design of the resonators translates the gigahertz-range resonant motion of micron-long cantilever elements to the displacement of the central supporting structure. Use of nano-crystalline diamond further increases the frequency comp...

Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

Directory of Open Access Journals (Sweden)

Paprocki K.

2018-03-01

Full Text Available Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometricalsizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

Planarization of the diamond film surface by using the hydrogen plasma etching with carbon diffusion process

International Nuclear Information System (INIS)

Kim, Sung Hoon

2001-01-01

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 .deg. C by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices

Monitoring of peptide induced disruption of artificial lipid membrane constructed on boron-doped nanocrystalline diamond by electrochemical impedance spectroscopy

Czech Academy of Sciences Publication Activity Database

Petrák, V.; Grieten, L.; Taylor, Andrew; Fendrych, František; Ledvina, Miroslav; Janssens, S. D.; Nesládek, M.; Haenen, K.; Wagner, P.

2011-01-01

Roč. 208, č. 9 (2011), s. 2099-2103 ISSN 1862-6300 R&D Projects : GA AV ČR KAN200100801; GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LD11076 Grant - others:European RD projects (XE) 238201-MATCON Institutional research plan: CEZ:AV0Z40550506; CEZ:AV0Z10100520 Keywords : biosensor * boron-doped nanocrystalline diamond * electrochemical impedance spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.463, year: 2011

Cathodoluminescence characteristics of polycrystalline diamond films grown by cyclic deposition method

International Nuclear Information System (INIS)

Seo, Soo-Hyung; Park, Chang-Kyun; Park, Jin-Seok

2002-01-01

Polycrystalline diamond films were deposited using a cyclic deposition method where the H 2 plasma for etching (t E ) and the CH 4 +H 2 plasma for growing (t G ) are alternately modulated with various modulation ratios (t E /t G ). From the measurement of full width at half maximum and I D /I G intensity ratio obtained from the Raman spectra, it was found that diamond defects and non-diamond carbon phases were reduced a little by adopting the cyclic deposition method. From the cathodoluminescence (CL) characteristics measured for deposited films, the nitrogen-related band (centered at approximately 590 nm) as well as the so-called band-A (centered at approximately 430 nm) were observed. As the cyclic ratio t E /t G increased, the relative intensity ratio of band-A to nitrogen-related band (I A /I N ) was found to monotonically decrease. In addition, analysis of X-ray diffraction spectra and scanning electron microscope morphologies showed that CL characteristics of deposited diamond films were closely related to their crystal orientations and morphologies

Thin film diamond microstructure applications

Science.gov (United States)

Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

1991-01-01

Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

In vitro behaviour of nanocrystalline silver-sputtered thin films

International Nuclear Information System (INIS)

Piedade, A P; Vieira, M T; Martins, A; Silva, F

2007-01-01

Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

Energy Technology Data Exchange (ETDEWEB)

Miksovsky, J. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Voss, A. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Kozarova, R. [Institute of Molecular Biology, Bulgarian Academy of Sciences, Sofia (Bulgaria); Kocourek, T.; Pisarik, P. [Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Ceccone, G. [Unit Nanobiosciences, European Commission Joint Research Centre, Ispra (Italy); Kulisch, W. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Jelinek, M. [Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Apostolova, M.D. [Institute of Molecular Biology, Bulgarian Academy of Sciences, Sofia (Bulgaria); Reithmaier, J.P. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Popov, C., E-mail: popov@ina.uni-kassel.de [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany)

2014-04-01

Graphical abstract: - Highlights: • UNCD and DLC films were modified by UV/O{sub 3} treatments, O{sub 2} or NH{sub 3}-containing plasmas. • Surface composition, wettability and surface energy change upon modifications. • Higher efficiency of UNCD modifications was observed. • Cell attachment and growth were influenced by the surface termination and roughness. - Abstract: Diamond and diamond-like carbon (DLC) films possess a set of excellent physical and chemical properties which together with a high biocompatibility make them attractive candidates for a number of medical and biotechnological applications. In the current work thin ultrananocrystalline diamond (UNCD) and DLC films were comparatively investigated with respect to cell attachment and proliferation after different surface modifications. The UNCD films were prepared by microwave plasma enhanced chemical vapor deposition, the DLC films by pulsed laser deposition (PLD). The films were comprehensively characterized with respect to their basic properties, e.g. crystallinity, morphology, chemical bonding nature, etc. Afterwards the UNCD and DLC films were modified applying O{sub 2} or NH{sub 3}/N{sub 2} plasmas and UV/O{sub 3} treatments to alter their surface termination. The surface composition of as-grown and modified samples was studied by X-ray photoelectron spectroscopy (XPS). Furthermore the films were characterized by contact angle measurements with water, formamide, 1-decanol and diiodomethane; from the results obtained the surface energy with its dispersive and polar components was calculated. The adhesion and proliferation of MG63 osteosarcoma cells on the different UNCD and DLC samples were assessed by measurement of the cell attachment efficiency and MTT assays. The determined cell densities were compared and correlated with the surface properties of as-deposited and modified UNCD and DLC films.

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

A micro-scale hot wire anemometer based on low stress (Ni/W) multi-layers deposited on nano-crystalline diamond for air flow sensing

Czech Academy of Sciences Publication Activity Database

Talbi, A.; Gimeno, L.; Gerbedoen, J.-C.; Viard, R.; Soltani, A.; Mortet, Vincent; Preobrazhensky, V.; Merlen, A.; Pernod, P.

2015-01-01

Roč. 25, č. 2 (2015), s. 1-8, č. článku 125029. ISSN 0960-1317 Institutional support: RVO:68378271 Keywords : hot wire * nano-crystalline diamond * active flow control * anemometry Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.768, year: 2015

Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Procházka, Václav, E-mail: prochazkav@fzu.cz [Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague (Czech Republic); Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague (Czech Republic); Cifra, Michal [Institute of Photonics and Electronics, The Czech Academy of Sciences, Chaberská 57, 182 51 Prague (Czech Republic); Kulha, Pavel [Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague (Czech Republic); Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague (Czech Republic); Ižák, Tibor [Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague (Czech Republic); Rezek, Bohuslav [Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague (Czech Republic); Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague (Czech Republic); Kromka, Alexander [Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague (Czech Republic); Faculty of Civil Engineering, Czech Technical University in Prague, Thákurova 7, 16629 Prague (Czech Republic)

2017-02-15

Highlights: • Interaction of non-adherent yeast cells with H-terminated diamond described. • Effect of cell culture solutions on H-diamond SGFET (positive potential shifts). • H-diamond sensitive to metabolic activity of yeast cells (negative potential shift). - Abstract: Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells. The pH sensitivity of the diamond-based SGFETs, the role of cell and protein adhesion on the gate surface and the role of negative surface charge of yeast cells on the SGFETs electrical characteristics are discussed as well.

Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

International Nuclear Information System (INIS)

Procházka, Václav; Cifra, Michal; Kulha, Pavel; Ižák, Tibor; Rezek, Bohuslav; Kromka, Alexander

2017-01-01

Highlights: • Interaction of non-adherent yeast cells with H-terminated diamond described. • Effect of cell culture solutions on H-diamond SGFET (positive potential shifts). • H-diamond sensitive to metabolic activity of yeast cells (negative potential shift). - Abstract: Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells. The pH sensitivity of the diamond-based SGFETs, the role of cell and protein adhesion on the gate surface and the role of negative surface charge of yeast cells on the SGFETs electrical characteristics are discussed as well.

Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

Czech Academy of Sciences Publication Activity Database

Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

2015-01-01

Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

X-ray beam monitor made by thin-film CVD single-crystal diamond.

Science.gov (United States)

Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Angelone, M; Pillon, M; Kachkanov, V; Tartoni, N; Benetti, M; Cannatà, D; Di Pietrantonio, F

2012-11-01

A novel beam position monitor, operated at zero bias voltage, based on high-quality chemical-vapor-deposition single-crystal Schottky diamond for use under intense synchrotron X-ray beams was fabricated and tested. The total thickness of the diamond thin-film beam monitor is about 60 µm. The diamond beam monitor was inserted in the B16 beamline of the Diamond Light Source synchrotron in Harwell (UK). The device was characterized under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of approximately 2 µm × 3 µm square. Time response, linearity and position sensitivity were investigated. Device response uniformity was measured by a raster scan of the diamond surface with the micro-focused beam. Transmissivity and spectral responsivity versus beam energy were also measured, showing excellent performance of the new thin-film single-crystal diamond beam monitor.

Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

Science.gov (United States)

Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

2014-02-04

Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

Science.gov (United States)

Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

2015-09-07

In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

Influence of nanocrystalline structure and surface properties of TiO2 thin films on the viability of L929 cells

Directory of Open Access Journals (Sweden)

Osękowska Małgorzata

2015-09-01

Full Text Available In this work the physicochemical and biological properties of nanocrystalline TiO2 thin films were investigated. Thin films were prepared by magnetron sputtering method. Their properties were examined by X-ray diffraction, photoelectron spectroscopy, atomic force microscopy, optical transmission method and optical profiler. Moreover, surface wettability and scratch resistance were determined. It was found that as-deposited coatings were nanocrystalline and had TiO2-anatase structure, built from crystallites in size of 24 nm. The surface of the films was homogenous, composed of closely packed grains and hydrophilic. Due to nanocrystalline structure thin films exhibited good scratch resistance. The results were correlated to the biological activity (in vitro of thin films. Morphological changes of mouse fibroblasts (L929 cell line after contact with the surface of TiO2 films were evaluated with the use of a contrast-phase microscope, while their viability was tested by MTT colorimetric assay. The viability of cell line upon contact with the surface of nanocrystalline TiO2 film was comparable to the control sample. L929 cells had homogenous cytoplasm and were forming a confluent monofilm, while lysis and inhibition of cell growth was not observed. Moreover, the viability in contact with surface of examined films was high. This confirms non-cytotoxic effect of TiO2 film surface on mouse fibroblasts.

Electronic and optical properties of diamond/organic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

2007-07-01

Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

Hydrogen doped thin film diamond. Properties and application for electronic devices

International Nuclear Information System (INIS)

Looi, H.J.

2000-01-01

The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Electrochemically assisted photocatalysis using nanocrystalline semiconductor thin films

Energy Technology Data Exchange (ETDEWEB)

Vinodgopal, K [Department of Chemistry, Indiana University Northwest, Gary, Indiana (United States); Kamat, Prashant V [Notre Dame Radiation Laboratory, Notre Dame, Indiana (United States)

1995-08-01

The principle and usefulness of electrochemically assisted photocatalysis has been illustrated with the examples of 4-chlorophenol and Acid Orange 7 degradation in aqueous solutions. Thin nanocrystalline semiconductor films coated on a conducting glass surface when employed as a photoelectrode in an electrochemical cell are effective for degradation of organic contaminants. The degradation rate can be greatly improved even in the absence of oxygen by applying an anodic bias to the TiO{sub 2} film electrodes. A ten-fold enhancement in the degradation rate was observed when TiO{sub 2} particles were coupled with SnO{sub 2} nanocrystallites at an applied bias potential of 0.83 V versus SCE

Nanocrystalline LiMn2O4 thin film cathode material prepared by polymer spray pyrolysis method for Li-ion battery

International Nuclear Information System (INIS)

Karthick, S.N.; Richard Prabhu Gnanakan, S.; Subramania, A.; Kim, Hee-Je

2010-01-01

Nanocrystalline cubic spinel lithium manganese oxide thin film was prepared by a polymer spray pyrolysis method using lithium acetate and manganese acetate precursor solution and polyethylene glycol-4000 as a polymeric binder. The substrate temperature was selected from the thermogravimetric analysis by finding the complete crystallization temperature of LiMn 2 O 4 precursor sample. The deposited LiMn 2 O 4 thin films were annealed at 450, 500 and 600 o C for 30 min. The thin film annealed at 600 o C was found to be the sufficient temperature to form high phase pure nanocrystalline LiMn 2 O 4 thin film. The formation of cubic spinel thin film was confirmed by X-ray diffraction study. Scanning electron microscopy and atomic force microscopy analysis revealed that the thin film annealed at 600 o C was found to be nanocrystalline in nature and the surface of the films were uniform without any crack. The electrochemical charge/discharge studies of the prepared LiMn 2 O 4 film was found to be better compared to the conventional spray pyrolysed thin film material.

Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

Science.gov (United States)

Shu, Deming; Shvydko, Yury; Stoupin, Stanislav; Kim, Kwang-Je

2018-05-08

A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with the thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

Energy Technology Data Exchange (ETDEWEB)

Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

2017-11-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

International Nuclear Information System (INIS)

Villalpando, I.; John, P.; Wilson, J. I. B.

2017-01-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Mueller matrix spectroscopic ellipsometry study of chiral nanocrystalline cellulose films

Science.gov (United States)

Mendoza-Galván, Arturo; Muñoz-Pineda, Eloy; Ribeiro, Sidney J. L.; Santos, Moliria V.; Järrendahl, Kenneth; Arwin, Hans

2018-02-01

Chiral nanocrystalline cellulose (NCC) free-standing films were prepared through slow evaporation of aqueous suspensions of cellulose nanocrystals in a nematic chiral liquid crystal phase. Mueller matrix (MM) spectroscopic ellipsometry is used to study the polarization and depolarization properties of the chiral films. In the reflection mode, the MM is similar to the matrices reported for the cuticle of some beetles reflecting near circular left-handed polarized light in the visible range. The polarization properties of light transmitted at normal incidence for different polarization states of incident light are discussed. By using a differential decomposition of the MM, the structural circular birefringence and dichroism of a NCC chiral film are evaluated.

Characterization of the Diamond-like Carbon Based Functionally Gradient Film

Institute of Scientific and Technical Information of China (English)

无

2002-01-01

Diamond-like carbon coatings have been used as solid lubricating coatings in vacuum technology for their goodphysical and chemical properties. In this paper, the hybrid technique of unbalanced magnetron sputtering and plasmaimmersion ion implantation (PIll) was adopted to fabricate diamond-like carbon-based functionally gradient film,N/TiN/Ti(N,C)/DLC, on the 304 stainless steel substrate. The film was characterized by using Raman spectroscopyand glancing X-ray diffraction (GXRD), and the topography and surface roughness of the film was observed usingAFM. The mechanical properties of the film were evaluated by nano-indentation. The results showed that the surfaceroughness of the film was approximately 0.732 nm. The hardness and elastic modulus, fracture toughness andinterfacial fracture toughness of N/TiN/Ti(N,C)/DLC functionally gradient film were about 19.84 GPa, 190.03 GPa,3.75 MPa.m1/2 and 5.68 MPa@m1/2, respectively. Compared with that of DLC monolayer and C/TiC/DLC multilayer,this DLC gradient film has better qualities as a solid lubricating coating.

Nanocrystalline Sr2CeO4 thin films grown on silicon by laser ablation

International Nuclear Information System (INIS)

Perea, Nestor; Hirata, G.A.

2006-01-01

Blue-white luminescent Sr 2 CeO 4 thin films were deposited by using pulsed laser ablation (λ = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr 2 CeO 4 grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr 2 CeO 4 however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems

Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

2011-02-03

Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Diamond thin films: giving biomedical applications a new shine.

Science.gov (United States)

Nistor, P A; May, P W

2017-09-01

Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo , diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required. © 2017 The Authors.

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

2015-10-15

Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

CERN Document Server

Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

2002-01-01

The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

DEFF Research Database (Denmark)

Pécz, Béla; Tóth, Lajos; Barna, Árpád

2013-01-01

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

Thermoluminescence characterization of CVD diamond film exposed to UV and beta radiation

International Nuclear Information System (INIS)

Barboza-Flores, M.; Melendrez, R.; Gastelum, S.; Chernov, V.; Bernal, R.; Cruz-Vazquez, C.; Brown, F.; Pedroza-Montero, M.; Gan, B.; Ahn, J.; Zhang, Q.; Yoon, S.F.

2003-01-01

Thermoluminescence (TL) properties of diamond films grown by microwave and hot filament CVD techniques were studied. The main purpose of the present work was to characterize the thermoluminescence response of diamond films to ultraviolet and beta radiation. The thermoluminescence excitation spectrum exhibits maximum TL efficiency around 210-215 nm. All samples presented a glow curve composed of at least one TL peak and showed regions of linear as well as supralinear behavior as a function or irradiation dose. The linear dose dependence was found for up to sixteen minutes of monochromatic UV irradiation and 300 Gy for beta irradiated samples. The activation energy and the frequency factor were determined and found in the range of 0.33-1.7 eV and 5.44 x 10 2 -5.67 x 10 16 s -1 , respectively. The observed TL performance is reasonable appropriate to justify further investigation of diamond films as radiation dosimeters keeping in mind that diamond is an ideal TL dosemeter since it is tissue-equivalent and biological compatible. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray diffraction characterization of epitaxial CVD diamond films with natural and isotopically modified compositions

Energy Technology Data Exchange (ETDEWEB)

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru [Russian Academy of Sciences, Space Materials Science Laboratory, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”, Kaluga Branch (Russian Federation); Voloshin, A. E. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation); Ralchenko, V. G.; Bolshakov, A. P. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Romanov, D. A. [Bauman Moscow State Technical University, Kaluga Branch (Russian Federation); Khomich, A. A. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Sozontov, E. A. [National Research Centre “Kurchatov Institute” (Russian Federation)

2016-11-15

Comparative investigations of homoepitaxial diamond films with natural and modified isotopic compositions, grown by chemical vapor deposition (CVD) on type-Ib diamond substrates, are carried out using double-crystal X-ray diffractometry and topography. The lattice mismatch between the substrate and film is precisely measured. A decrease in the lattice constant on the order of (Δa/a){sub relax} ∼ (1.1–1.2) × 10{sup –4} is recorded in isotopically modified {sup 13}C (99.96%) films. The critical thicknesses of pseudomorphic diamond films is calculated. A significant increase in the dislocation density due to the elastic stress relaxation is revealed by X-ray topography.

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

Science.gov (United States)

Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

2011-04-01

The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Zhang Jing

2014-01-01

Full Text Available The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S codoped diamond films grown on high-temperature and high-pressure (HTHP diamond and Si substrates were investigated using atom force microscopy (AFM, scanning tunneling microscopy (STM, secondary ion mass spectroscopy (SIMS, and current imaging tunneling spectroscopy (CITS measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

Directory of Open Access Journals (Sweden)

Dychalska Anna

2015-09-01

Full Text Available Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100 substrate in the temperature range of 30 °C to 480 °C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm-1 was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing tempera­ture by using two commonly known equations. Comparison of the residts obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

International Nuclear Information System (INIS)

Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

1999-01-01

There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

Epithelial cells morphology and adhesion on diamonds films deposited and chemically modified by plasma processes

Czech Academy of Sciences Publication Activity Database

Rezek, Bohuslav; Ukraintsev, Egor; Krátká, Marie; Taylor, Andrew; Fendrych, František; Mandys, V.

2014-01-01

Roč. 9, č. 3 (2014), "031012-1"-"031012-8" ISSN 1934-8630 R&D Projects: GA ČR GAP108/12/0996; GA AV ČR KAN400100701 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond (NCD) * AFM * surface s * DNA Subject RIV: BO - Biophysics Impact factor: 3.374, year: 2014 http://scitation.aip.org/content/avs/journal/bip/9/3/10.1116/1.4890471

Nucleation and adhesion of diamond films on Co cemented tungsten carbide

Energy Technology Data Exchange (ETDEWEB)

Polini, R.; Santarelli, M.; Traversa, E.

1999-12-01

Diamond deposits were grown using hot filament chemical vapor deposition (CVD) on pretreated Co cemented tungsten carbide (WC-Co) substrates with an average grain size of 6 {micro}m. Depositions were performed with 0.5 or 1.0% methane concentration and with substrate temperatures ranging from 750 to 1,000 C. Diamond nucleation densities were measured by scanning electron microscopy. Scratched and bias-enhanced nucleation pretreated substrates showed the larger nucleation densities. Etching of the WC performed by Murakami's reagent, followed by surface-Co dissolution (MP pretreatment), led to a roughened but scarcely nucleating surface. The performance of a scratching prior to the MP pretreatment allowed one to increase the nucleation density, due scratching-induced defects, confined in the outermost layer of WC grains, which act as nucleation sites. Smaller nucleation densities were observed with increasing the substrate temperature and reducing the methane concentration, confirming that diamond nucleates via a heterogeneous process. The adhesion of continuous films was evaluated by the reciprocal of the slope of crack radius-indentation load functions. The substrate pretreatments mainly affected the film adhesion, while the influence of CVD process conditions was minor. The two main factors that improve the diamond film adhesion are the coating-substrate contact area and the surface-Co removal.

Growth, characterization and device development in monocrystalline diamond films

Science.gov (United States)

Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

1995-06-01

Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

Study on tribological behavior and cutting performance of CVD diamond and DLC films on Co-cemented tungsten carbide substrates

International Nuclear Information System (INIS)

Zhang Dongcan; Shen Bin; Sun Fanghong

2010-01-01

The tribological behaviors of diamond and diamond-like carbon (DLC) films play a major role on their machining and mechanical applications. In this study, diamond and diamond-like carbon (DLC) films are deposited on the cobalt cemented tungsten carbide (WC-Co) substrate respectively adopting the hot filament chemical vapor deposition (HFCVD) technique and the vacuum arc discharge with a graphite cathode, and their friction properties are evaluated on a reciprocating ball-on-plate tribometer with counterfaces of silicon nitride (Si 3 N 4 ) ceramic, cemented tungsten carbide (WC) and ball-bearing steel materials, under the ambient air without lubricating condition. Moreover, to evaluate their cutting performance, comparative turning tests are conducted using the uncoated WC-Co and as-fabricated CVD diamond and DLC coated inserts, with glass fiber reinforced plastics (GFRP) composite materials as the workpiece. The as-deposited HFCVD diamond and DLC films are characterized with energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction spectroscopy (XRD), Raman spectroscopy and 3D surface topography based on white-light interferometry. Furthermore, Rocwell C indentation tests are conducted to evaluate the adhesion of HFCVD diamond and DLC films grown onto WC-Co substrates. SEM and 3D surface topography based on white-light interferometry are also used to investigate the worn region on the surfaces of diamond and DLC films. The friction tests suggest that the obtained friction coefficient curves that of various contacts exhibit similar evolution tendency. For a given counterface, DLC films present lower stable friction coefficients than HFCVD diamond films under the same sliding conditions. The cutting tests results indicate that flank wear of the HFCVD diamond coated insert is lower than that of DLC coated insert before diamond films peeling off.

Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Shilpam; Amaladass, E.P. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Sharma, Neha [Surface & Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Harimohan, V. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Mani, Awadhesh, E-mail: mani@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

2017-06-01

Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron sputtering at different argon pressures. The grain size has been tuned using deposition pressure as the sole control parameter. A variation of particle sizes, room temperature resistivity and superconducting transition has been studied as a function of deposition pressure. The nano-crystalline molybdenum thin films are found to have large carrier concentration but very low mobility and electronic mean free path. Hall and conductivity measurements have been used to understand the effect of disorder on the carrier density and mobilities. Ioffe-Regel parameter is shown to correlate with the continuous metal-insulator transition in our samples. - Highlights: • Thin films of molybdenum using DC sputtering have been deposited on glass. • Argon background pressure during sputtering was used to tune the crystallite sizes of films. • Correlation in deposition pressure, disorder and particle sizes has been observed. • Disorder tuned superconductor to insulator transition along with an intermediate metallic phase has been observed. • Enhancement of superconducting transition temperature and a dome shaped T{sub C} vs. deposition pressure phase diagram has been observed.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Nanocomposites Based on Polyethylene and Nanocrystalline Silicon Films

Directory of Open Access Journals (Sweden)

Olkhov Anatoliy Aleksandrovich

2014-12-01

Full Text Available High-strength polyethylene films containing 0.5-1.0 wt. % of nanocrystalline silicon (nc-Si were synthesized. Samples of nc-Si with an average core diameter of 7-10 nm were produced by plasmochemical method and by laser-induced decomposition of monosilane. Spectral studies revealed almost complete (up to ~95 % absorption of UV radiation in 200- 400 nm spectral region by 85 micron thick film if the nc-Si content approaches to 1.0 wt. %. The density function of particle size in the starting powders and polymer films containing immobilized silicon nanocrystallites were obtained using the modeling a complete profile of X-ray diffraction patterns, assuming spherical grains and the lognormal distribution. The results of X-ray analysis shown that the crystallite size distribution function remains almost unchanged and the crystallinity of the original polymer increases to about 10 % with the implantation of the initial nc-Si samples in the polymer matrix.

Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

Science.gov (United States)

Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

2018-05-01

Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

Characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki [Core Technology Laboratory, Samsung SDI, 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do 442-391 (Korea, Republic of)]. E-mail: hanki1031.kim@samsung.com; Choi, Sun-Hee [Nano Materials Research Center, Korea Institute of Science and Technology (KIST), PO Box 131 Choengryang, Seoul 130-650 (Korea, Republic of); Yoon, Young Soo [Department of Advanced Fusion Technology (DAFT), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701 (Korea, Republic of); Chang, Sung-Yong [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Ok, Young-Woo [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Seong, Tae-Yeon [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of)

2005-03-22

The characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O{sub 2}/Ar ambient have RuO{sub 2}-SnO{sub 2} nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film in 0.5 M H{sub 2}SO{sub 4} liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm{sup 2} {mu}m. This suggests that the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor.

Dislocation/hydrogen interaction mechanisms in hydrided nanocrystalline palladium films

International Nuclear Information System (INIS)

Amin-Ahmadi, Behnam; Connétable, Damien; Fivel, Marc; Tanguy, Döme; Delmelle, Renaud; Turner, Stuart; Malet, Loic; Godet, Stephane; Pardoen, Thomas; Proost, Joris; Schryvers, Dominique

2016-01-01

The nanoscale plasticity mechanisms activated during hydriding cycles in sputtered nanocrystalline Pd films have been investigated ex-situ using advanced transmission electron microscopy techniques. The internal stress developing within the films during hydriding has been monitored in-situ. Results showed that in Pd films hydrided to β-phase, local plasticity was mainly controlled by dislocation activity in spite of the small grain size. Changes of the grain size distribution and the crystallographic texture have not been observed. In contrast, significant microstructural changes were not observed in Pd films hydrided to α-phase. Moreover, the effect of hydrogen loading on the nature and density of dislocations has been investigated using aberration-corrected TEM. Surprisingly, a high density of shear type stacking faults has been observed after dehydriding, indicating a significant effect of hydrogen on the nucleation energy barriers of Shockley partial dislocations. Ab-initio calculations of the effect of hydrogen on the intrinsic stable and unstable stacking fault energies of palladium confirm the experimental observations.

Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

Energy Technology Data Exchange (ETDEWEB)

Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

2012-12-01

Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

Fabrication and Characterization of FeNiCr Matrix-TiC Composite for Polishing CVD Diamond Film

Institute of Scientific and Technical Information of China (English)

Zhuji Jin; Zewei Yuan; Renke Kang; Boxian Dong

2009-01-01

Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high efficiency and low cost.By this method CVD diamond film is polished through being simply pressed against a metal disc rotating at a high speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere.However, the relatively soft materials such as stainless steel, cast iron and nickel alloy widely used for polishing CVD diamond film are easy to wear and adhere to diamond film surface, which may further lead to low efficiency and poor polishing quality.In this paper, FeNiCr matrix-TiC composite used as grinding wheel for polishing CVD diamond film was obtained by combination of mechanical alloying (MA) and spark plasma sintering (SPS).The process of ball milling,composition, density, hardness, high-temperature oxidation resistance and wear resistance of the sintered piece were analyzed.The results show that TiC was introduced in MA-SPS process and had good combination with FeNiCr matrix and even distribution in the matrix.The density of composite can be improved by mechanical alloying.The FeNiCr matrix-TiC composite obtained at 1273 K was found to be superior to at 1173 K sintering in hardness, high-temperature oxidation resistance and wearability.These properties are more favorable than SUS304 for the preparation of high-performance grinding wheel for polishing CVD diamond film.

Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth

International Nuclear Information System (INIS)

Yoshikawa, Taro; Kodama, Hideyuki; Kono, Shozo; Suzuki, Kazuhiro; Sawabe, Atsuhito

2015-01-01

The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows. - Highlights: • Wafer bowing control of free-standing heteroepitaxial diamond (100) films • Effect of patterned nucleation and growth (PNG) technique on wafer bowing reduction • Influence of nucleation region patterns of PNG on wafer bowing • Internal stress analysis of PNG films via confocal micro-Raman spectroscopy

Investigation of the nucleation process of chemical vapour deposited diamond films

International Nuclear Information System (INIS)

Katai, S.

2001-01-01

The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation (BEN) process during the chemical vapour deposition (CVD) of diamond on silicon. The investigation of both the gas phase environment above the substrate surface, by in situ mass selective energy analysis of ions, and of the surface composition and structure by in vacuo surface analytic methods (XPS, EELS) have been carried out. In both cases, the implementation of these measurements required the development and construction of special experimental apparatus as well. The secondary aim of this work was to give orientation to our long term goal of growing diamond films with improved quality. For this reason, (1) contaminant levels at the diamond-silicon interface after growth were studied by SIMS, (2) the internal stress distribution of highly oriented free-standing diamond films were studied by Raman spectroscopy, and (3) an attempt was made to produce spatially regular oriented nuclei formation by nucleating on a pattern created by laser treatment on silicon substrates. (orig.)

Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet

Science.gov (United States)

Guo, Jianchao; Li, Chengming; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Hua, Chenyi; Yan, Xiongbo

2016-05-01

The addition of titanium (Ti) interlayer was verified to reduce the residual stress of diamond films by self-fracturing and facilitate the harvest of a crack-free free-standing diamond film prepared by direct current (DC) arc plasma jet. In this study, the evolution of the Ti interlayer between large-area diamond film and substrate was studied and modeled in detail. The evolution of the interlayer was found to be relevant to the distribution of the DC arc plasma, which can be divided into three areas (arc center, arc main, and arc edge). The formation rate of titanium carbide (TiC) in the arc main was faster than in the other two areas and resulted in the preferred generation of crack in the diamond film in the arc main during cooling. Sandwich structures were formed along with the growth of TiC until the complete transformation of the Ti interlayer. The interlayer released stress via self-fracture. Avoiding uneven fragile regions that formed locally in the interlayer and achieving cooperatively released stress are crucial for the preparation of large crack-free diamond films.

Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

Directory of Open Access Journals (Sweden)

Sutichai Chaisitsak

2011-07-01

Full Text Available This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG sensors by doping with fluorine (F. Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer. The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

Science.gov (United States)

Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

2013-01-01

Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

Subtle Raman signals from nano-diamond and β-SiC thin films

International Nuclear Information System (INIS)

Kuntumalla, Mohan Kumar; Ojha, Harish; Srikanth, Vadali Venkata Satya Siva

2013-01-01

Micro Raman scattering experiments are carried out in pursuit of subtle but discernable signals from nano-diamond and β-SiC thin films. The thin films are synthesized using microwave plasma assisted chemical vapor deposition technique. Raman scattering experiments in conjunction with scanning electron microscopy and x-ray diffraction were carried out to extract microstructure and phase information of the above mentioned thin films. Certain subtle Raman signals have been identified in this work. In the case of nanodiamond thin films, Raman bands at ∼ 485 and ∼ 1220 cm −1 are identified. These bands have been assigned to the nanodiamond present in nanodiamond thin films. In the case of nano β-SiC thin films, optical phonons are identified using surface enhanced Raman scattering. - Highlights: ► Subtle Raman signals from nano-diamond and β-silicon carbide related thin films. ► Raman bands at ∼ 485 and ∼ 1220 cm −1 from nanodiamond thin films are identified. ► Longitudinal optical phonon from nano β-silicon carbide thin films is identified

Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

Directory of Open Access Journals (Sweden)

Haridas D. Dhaygude

2016-03-01

Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

On the GHz frequency response in nanocrystalline FeXN ultra-soft magnetic films

NARCIS (Netherlands)

Chechenin, NG; Craus, CB; Chezan, AR; Vystavel, T; Boerma, DO; De Hosson, JTM; Niesen, L; Tidrow, SC; Horwitz, JS; Xi, XX; Levy, J

2002-01-01

The periodicity and angular spread of the in-plane magnetization for ultrasoft nanocrystalline FeZrN films were estimated from an analysis of the ripple structure, observed in Lorentz transmission electron microscopy (LTEM) images. The influence of the micromagnetic ripple on the ferromagnetic

Nanocrystalline Sr{sub 2}CeO{sub 4} thin films grown on silicon by laser ablation

Energy Technology Data Exchange (ETDEWEB)

Perea, Nestor [Posgrado en Fisica de Materiales, CICESE-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada, B.C., 22860 (Mexico); Hirata, G.A. [Centro de Ciencias de la Materia Condensada-UNAM, Km. 107 Carretera Tijuana Ensenada, Ensenada, B.C. 22860 (Mexico)]. E-mail: hirata@ccmc.unam.mx

2006-02-21

Blue-white luminescent Sr{sub 2}CeO{sub 4} thin films were deposited by using pulsed laser ablation ({lambda} = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr{sub 2}CeO{sub 4} grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr{sub 2}CeO{sub 4} however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems.

A novel Mo-W interlayer approach for CVD diamond deposition on steel

Science.gov (United States)

Kundrát, Vojtěch; Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin; Sullivan, John; Ye, Haitao

2015-04-01

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) - tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

A novel Mo-W interlayer approach for CVD diamond deposition on steel

Energy Technology Data Exchange (ETDEWEB)

Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham, B4 7ET (United Kingdom); Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin [Miba Coating Group: Teer Coatings Ltd, West-Stone-House, West-Stone, Berry-Hill-Industrial-Estate, WR9 9AS, Droitwich (United Kingdom)

2015-04-15

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

A novel Mo-W interlayer approach for CVD diamond deposition on steel

Directory of Open Access Journals (Sweden)

Vojtěch Kundrát

2015-04-01

Full Text Available Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42 substrates using a multi-structured molybdenum (Mo – tungsten (W interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

Morphological and electrochemical properties of boron-doped diamond films on carbon cloths with enhanced surface area

International Nuclear Information System (INIS)

Silva, L.L.G.; Ferreira, N.G.; Corat, E.J.

2008-01-01

The electrochemical properties of doped diamond electrodes (10 17 -10 19 B cm -3 ) grown on carbon fiber cloths in H 2 SO 4 0.1 mol L -1 electrolyte were investigated. Cyclic voltammograms of B-doped diamond/carbon fiber cloth and carbon fiber cloth electrodes showed that both kinds of electrodes possess similar working potential windows of about 2.0 V. The electrode capacitance was determined by impedance spectroscopy and chronopotentiometry measurements and very close values were obtained. The capacitance values of the diamond film on carbon fiber cloths were 180 times higher than the ones of diamond films on Si. In this paper we have also discussed the capacitance frequency dependence of diamond/carbon cloth electrodes

Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Seong Shan Yap

2015-01-01

Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

Structure and wettability property of the growth and nucleation surfaces of thermally treated freestanding CVD diamond films

Science.gov (United States)

Pei, Xiaoqiang; Cheng, Shaoheng; Ma, Yibo; Wu, Danfeng; Liu, Junsong; Wang, Qiliang; Yang, Yizhou; Li, Hongdong

2015-08-01

This paper reports the surface features and wettability properties of the (1 0 0)-textured freestanding chemical vapor deposited (CVD) diamond films after thermal exposure in air at high temperature. Thermal oxidation at proper conditions eliminates selectively nanodiamonds and non-diamond carbons in the films. The growth side of the films contains (1 0 0)-oriented micrometer-sized columns, while its nucleation side is formed of nano-sized tips. The examined wettability properties of the as-treated diamond films reveal a hydrophilicity and superhydrophilicity on the growth surface and nucleation surface, respectively, which is determined by oxygen termination and geometry structure of the surface. When the surface termination is hydrogenated, the wettability of nucleation side converted from superhydrophilicity to high hydrophobicity, while the hydrophilicity of the growth side does not change significantly. The findings open a possibility for realizing freestanding diamond films having not only novel surface structures but also multifunction applications, especially proposed on the selected growth side or nucleation side in one product.

Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

Energy Technology Data Exchange (ETDEWEB)

Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

2015-04-15

Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

Diamond-based materials for biomedical applications

CERN Document Server

Narayan, Roger

2013-01-01

Carbon is light-weight, strong, conductive and able to mimic natural materials within the body, making it ideal for many uses within biomedicine. Consequently a great deal of research and funding is being put into this interesting material with a view to increasing the variety of medical applications for which it is suitable. Diamond-based materials for biomedical applications presents readers with the fundamental principles and novel applications of this versatile material. Part one provides a clear introduction to diamond based materials for medical applications. Functionalization of diamond particles and surfaces is discussed, followed by biotribology and biological behaviour of nanocrystalline diamond coatings, and blood compatibility of diamond-like carbon coatings. Part two then goes on to review biomedical applications of diamond based materials, beginning with nanostructured diamond coatings for orthopaedic applications. Topics explored include ultrananocrystalline diamond for neural and ophthalmologi...

Nanocrystalline diamond: In vitro biocompatibility assessment by MG63 and human bone marrow cells cultures.

Science.gov (United States)

Amaral, M; Dias, A G; Gomes, P S; Lopes, M A; Silva, R F; Santos, J D; Fernandes, M H

2008-10-01

Nanocrystalline diamond (NCD) has a great potential for prosthetic implants coating. Nevertheless, its biocompatibility still has to be better understood. To do so, we employed several materials characterization techniques (SEM, AFM, micro-Raman spectroscopy) and cell culture assays using MG63 osteoblast-like and human bone marrow cells. Biochemical routines (MTT assays, Lowry's method, ALP activity) supported by SEM and confocal microscopy characterization were carried out. We used silicon nitride (Si3N4) substrates for NCD coatings based on a previous demonstration of the superior adhesion and tribological performance of these NCD coated ceramics. Results demonstrate an improved human osteoblast proliferation and the stimulation of differentiated markers, like ALP activity and matrix mineralization, compared with standard polystyrene tissue culture plates. The nanometric featuring of NCD, associated to its chemical affinity are key points for bone regeneration purposes.

Adhesion enhancement of diamond-like carbon thin films on Ti alloys by incorporation of nanodiamond particles

International Nuclear Information System (INIS)

Zhang, C.Z.; Tang, Y.; Li, Y.S.; Yang, Q.

2013-01-01

Coating adherent diamond-like carbon (DLC) thin films directly on Ti alloys is technologically difficult. This research incorporates nanodiamond particles to form a diamond/DLC composite interlayer to enhance the adhesion of DLC thin films on Ti6Al4V substrates. Initially, nanodiamond particles were deposited on Ti6Al4V substrates by microwave plasma enhanced chemical vapor deposition from a methane–hydrogen gas mixture. A DLC thin film was then deposited, on top of the nanodiamond particles, by direct ion beam deposition. Scanning electron microscopy, Atomic force microscopy, X-ray Diffraction and Raman spectroscopy were used to characterize the microstructure and chemical bonding of the deposited particles and films, and Rockwell indentation testing was used to evaluate the adhesion of the deposited films. The results indicate that the pre-deposited nanodiamond particles significantly enhance the interfacial adhesion between the DLC thin film and the Ti6Al4V substrate, possibly by enhanced interfacial bonding, mechanical interlocking, and stress relief. - Highlights: ► Nanodiamond particles were deposited on Ti6Al4V before DLC deposition. ► Diamond/DLC composite film was formed by incorporation of nanodiamond particles. ► Greatly enhanced adhesion of diamond/DLC composite film on Ti6Al4V was achieved. ► Enhanced adhesion is by increased interfacial bonding and mechanical interlocking

Adhesion enhancement of diamond-like carbon thin films on Ti alloys by incorporation of nanodiamond particles

Energy Technology Data Exchange (ETDEWEB)

Zhang, C.Z.; Tang, Y. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, Canada S7N 5A9 (Canada); Li, Y.S. [Plasma Physics Laboratory, University of Saskatchewan, 116 Science Place, Saskatoon, SK, Canada S7N 5E2 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, Canada S7N 5A9 (Canada)

2013-01-01

Coating adherent diamond-like carbon (DLC) thin films directly on Ti alloys is technologically difficult. This research incorporates nanodiamond particles to form a diamond/DLC composite interlayer to enhance the adhesion of DLC thin films on Ti6Al4V substrates. Initially, nanodiamond particles were deposited on Ti6Al4V substrates by microwave plasma enhanced chemical vapor deposition from a methane–hydrogen gas mixture. A DLC thin film was then deposited, on top of the nanodiamond particles, by direct ion beam deposition. Scanning electron microscopy, Atomic force microscopy, X-ray Diffraction and Raman spectroscopy were used to characterize the microstructure and chemical bonding of the deposited particles and films, and Rockwell indentation testing was used to evaluate the adhesion of the deposited films. The results indicate that the pre-deposited nanodiamond particles significantly enhance the interfacial adhesion between the DLC thin film and the Ti6Al4V substrate, possibly by enhanced interfacial bonding, mechanical interlocking, and stress relief. - Highlights: ► Nanodiamond particles were deposited on Ti6Al4V before DLC deposition. ► Diamond/DLC composite film was formed by incorporation of nanodiamond particles. ► Greatly enhanced adhesion of diamond/DLC composite film on Ti6Al4V was achieved. ► Enhanced adhesion is by increased interfacial bonding and mechanical interlocking.

Dosimetric characterization of chemical-vapor-deposited diamond film irradiated with UV and beta radiation

Science.gov (United States)

Meléndrez, R.; Chernov, V.; Pedroza-Montero, M.; Barboza-Flores, M.

2003-03-01

Diamond is an excellent prospect for clinical radiation dosimetry due to its tissue-equivalence properties and being chemically inert. The use of diamond in radiation dosimetry has been halted by the high market price; although recently the capability of growing high quality polycrystalline has renewed the interest in using diamond films as detectors and dosimeters. In the present work we have characterized the dosimetric properties of diamond films synthesized by using chemical vapor deposition. The thermoluminescence (TL) of UV and beta exposed samples shows a glow curve composed of at least four peaks; one located around 587 K presents excellent TL properties suitable for dosimetric applications with ionizing and non ionizing radiation. The TL excitation spectrum exhibits maximum TL efficiency at 220 nm. The samples show regions of linear as well as supralinear behavior as a function or irradiation dose. The linear dose dependence was found for up to sixteen minutes of UV irradiation and 300 Gy for beta irradiated samples. The activation energy and the frequency factor were determined and found in the range of 0.32 - 0.89 eV and 1.1x10^2 - 2x10^8s_-1, respectively. The observed TL performance is reasonable appropriate to justify further investigation of diamond films as radiation dosimeters.

Flexible diamond-like carbon film coated on rubber

NARCIS (Netherlands)

Pei, Y.T.; Bui, X.L.; Pal, J.P. van der; Martinez-Martinez, D.; Hosson, J.Th.M. De

2013-01-01

Dynamic rubber seals are major sources of friction of lubrication systems and bearings, which may take up to 70% of the total friction. The solution we present is to coat rubbers with diamond-like carbon (DLC) thin films by which the coefficient of friction is reduced to less than one tenth. Coating

Adhesion analysis of polycrystalline diamond films on molybdenum by means of scratch, indentation and sand abrasion testing

NARCIS (Netherlands)

Buijnsters, J.G.; Shankar, P.; Enckevort, W.J.P. van; Schermer, J.J.; Meulen, J.J. ter

2005-01-01

Diamond films have been grown by hot-filament chemical vapour deposition (CVD) on molybdenum substrates under different growth conditions. The films grown with increasing substrate temperatures show a higher interconnection of diamond grains, whereas increasing methane concentrations in the 0.5-4.0%

Characterization of boron doped nanocrystalline diamonds

International Nuclear Information System (INIS)

Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

2008-01-01

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

Thermoluminescence in CVD diamond films: application to actinometric dosimetry

International Nuclear Information System (INIS)

Barboza-Flores, M.; Melendrez, R.; Chernov, V.; Castaneda, B.; Pedroza-Montero, M.; Gan, B.; Ahn, J.; Zhang, Q.; Yoon, S.F.

2002-01-01

Diamond is considered a tissue-equivalent material since its atomic number (Z=6) is close to the effective atomic number of biological tissue (Z=7.42). Such a situation makes it suitable for radiation detection purposes in medical applications. In the present work the analysis is reported of the thermoluminescence (TL) and dosimetric features of chemically vapour deposited (CVD) diamond film samples subjected to ultraviolet (UV) irradiation in the actinometric region. The TL glow curve shows peaks at 120, 220, 320 and 370 deg. C. The 120 and 370 deg. C peaks are too weak and the first one fades away in a few seconds after exposure. The overall room temperature fading shows a 50% TL decay 30 min after exposure. The 320 deg. C glow peak is considered to be the most adequate for dosimetric applications due to its low fading and linear TL behaviour as a function of UV dose in the 180-260 nm range. The TL excitation spectrum presents a broad band with at least two overlapped components around 205 and 220 nm. The results indicate that the TL behaviour of CVD diamond film can be a good alternative to the currently available dosemeter and detector in the actinometric region as well as in clinical and medical applications. (author)

Low resistance polycrystalline diamond thin films deposited by hot ...

Indian Academy of Sciences (India)

Administrator

silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemi- cal vapour ... the laser spot was focused on the sample surface using a ... tative spectra of diamond thin films with a typical dia-.

Diamond and Diamond-Like Materials as Hydrogen Isotope Barriers

International Nuclear Information System (INIS)

Foreman, L.R.; Barbero, R.S.; Carroll, D.W.; Archuleta, T.; Baker, J.; Devlin, D.; Duke, J.; Loemier, D.; Trukla, M.

1999-01-01

This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The purpose of this project was to develop diamond and diamond-like thin-films as hydrogen isotope permeation barriers. Hydrogen embrittlement limits the life of boost systems which otherwise might be increased to 25 years with a successful non-reactive barrier. Applications in tritium processing such as bottle filling processes, tritium recovery processes, and target filling processes could benefit from an effective barrier. Diamond-like films used for low permeability shells for ICF and HEDP targets were also investigated. Unacceptable high permeabilities for hydrogen were obtained for plasma-CVD diamond-like-carbon films

Biological responses of diamond-like carbon (DLC) films with different structures in biomedical application.

Science.gov (United States)

Liao, T T; Zhang, T F; Li, S S; Deng, Q Y; Wu, B J; Zhang, Y Z; Zhou, Y J; Guo, Y B; Leng, Y X; Huang, N

2016-12-01

Diamond-like carbon (DLC) films are potential candidates for artificial joint surface modification in biomedical applications, and the influence of the structural features of DLC surfaces on cell functions has attracted attention in recent decades. Here, the biocompatibility of DLC films with different structures was investigated using macrophages, osteoblasts and fibroblasts. The results showed that DLC films with a low ratio of sp(2)/sp(3), which tend to have a structure similar to that of diamond, led to less inflammatory, excellent osteogenic and fibroblastic reactions, with higher cell viability, better morphology, lower release of TNF-α (tumor necrosis factor-α) and IL-6 (interleukin-6), and higher release of IL-10 (interleukin-10). The results also demonstrated that the high-density diamond structure (low ratio of sp(2)/sp(3)) of DLC films is beneficial for cell adhesion and growth because of better protein adsorption without electrostatic repulsion. These findings provide valuable insights into the mechanisms underlying inhibition of an inflammatory response and the promotion of osteoblastogenesis and fibrous propagation, and effectively build a system for evaluating the biocompatibility of DLC films. Copyright © 2016 Elsevier B.V. All rights reserved.

Preparation and characterization of nanocrystalline composites Mo-C-N hard films

Energy Technology Data Exchange (ETDEWEB)

Liu, Q. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Liu, T. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Fang, Q.F. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)]. E-mail: qffang@issp.ac.cn; Liang, F.J. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Wang, J.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)

2006-05-01

Molybdenum carbonitride (MoCN) films were deposited on Si (001) and stainless steel substrates by reactive direct-current magnetron sputtering with a molybdenum and graphite composite target. By changing the substrate temperature and the N{sub 2} / Ar ratio in the sputtering gas, it is found that good quality MoCN films can be deposited at substrate temperature of 300-400 deg. C under N{sub 2} partial pressure of 0.25-0.5 Pa with a total working pressure of 1 Pa. The structures of the films deposited at such conditions were determined by X-ray diffraction and X-ray photoelectron spectroscopy analysis as nanocrystalline molybdenum carbonitride with a grain size of several ten nanometers was embedded in the amorphous matrix of C and CN {sub x}. The hardness of the MoCN films can reach 28 GPa, much higher than the value of MoC and MoN films alone.

Nanostructured titanium/diamond-like carbon multilayer films: deposition, characterization, and applications.

Science.gov (United States)

Dwivedi, Neeraj; Kumar, Sushil; Malik, Hitendra K

2011-11-01

Titanium/diamond-like carbon multilayer (TDML) films were deposited using a hybrid system combining radio frequency (RF)-sputtering and RF-plasma enhanced chemical vapor deposition (PECVD) techniques under a varied number of Ti/diamond-like carbon (DLC) bilayers from 1 to 4, at high base pressure of 1 × 10(-3) Torr. The multilayer approach was used to create unique structures such as nanospheres and nanorods in TDML films, which is confirmed by scanning electron microscopy (SEM) analysis and explained by a hypothetical model. Surface composition was evaluated by X-ray photoelectron spectroscopy (XPS), whereas energy dispersive X-ray analysis (EDAX) and time-of-flight secondary ion mass spectrometer (ToF-SIMS) measurements were performed to investigate the bulk composition. X-ray diffraction (XRD) was used to evaluate the phase and crystallinity of the deposited TDML films. Residual stress in these films was found to be significantly low. These TDML films were found to have excellent nanomechanical properties with maximum hardness of 41.2 GPa. In addition, various nanomechanical parameters were calculated and correlated with each other. Owing to metallic interfacial layer of Ti in multilayer films, the optical properties, electrical properties, and photoluminescence were improved significantly. Due to versatile nanomechanical properties and biocompatibility of DLC and DLC based films, these TDML films may also find applications in biomedical science.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

International Nuclear Information System (INIS)

Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

2014-01-01

Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films

Science.gov (United States)

Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.

2017-12-01

Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.

Application of Powder Diffraction Methods to the Analysis of Short- and Long-Range Atomic Order in Nanocrystalline Diamond and SiC: The Concept of the Apparent Lattice Parameter (alp)

Science.gov (United States)

Palosz, B.; Grzanka, E.; Gierlotka, S.; Stelmakh, S.; Pielaszek, R.; Bismayer, U.; Weber, H.-P.; Palosz, W.

2003-01-01

Two methods of the analysis of powder diffraction patterns of diamond and SiC nanocrystals are presented: (a) examination of changes of the lattice parameters with diffraction vector Q ('apparent lattice parameter', alp) which refers to Bragg scattering, and (b), examination of changes of inter-atomic distances based on the analysis of the atomic Pair Distribution Function, PDF. Application of these methods was studied based on the theoretical diffraction patterns computed for models of nanocrystals having (i) a perfect crystal lattice, and (ii), a core-shell structure, i.e. constituting a two-phase system. The models are defined by the lattice parameter of the grain core, thickness of the surface shell, and the magnitude and distribution of the strain field in the shell. X-ray and neutron experimental diffraction data of nanocrystalline SiC and diamond powders of the grain diameter from 4 nm up to micrometers were used. The effects of the internal pressure and strain at the grain surface on the structure are discussed based on the experimentally determined dependence of the alp values on the Q-vector, and changes of the interatomic distances with the grain size determined experimentally by the atomic Pair Distribution Function (PDF) analysis. The experimental results lend a strong support to the concept of a two-phase, core and the surface shell structure of nanocrystalline diamond and SiC.

Sandblasting induced stress release and enhanced adhesion strength of diamond films deposited on austenite stainless steel

Science.gov (United States)

Li, Xiao; Ye, Jiansong; Zhang, Hangcheng; Feng, Tao; Chen, Jianqing; Hu, Xiaojun

2017-08-01

We firstly used sandblasting to treat austenite stainless steel and then deposited a Cr/CrN interlayer by close field unbalanced magnetron sputtering on it. After that, diamond films were prepared on the interlayer. It is found that the sandblasting process induces phase transition from austenite to martensite in the surface region of the stainless steel, which decreases thermal stress in diamond films due to lower thermal expansion coefficient of martensite phase compared with that of austenite phase. The sandblasting also makes stainless steel's surface rough and the Cr/CrN interlayer film inherits the rough surface. This decreases the carburization extent of the interlayer, increases nucleation density and modifies the stress distribution. Due to lower residual stress and small extent of the interlayer's carburization, the diamond film on sandblast treated austenite stainless steel shows enhanced adhesion strength.

Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

International Nuclear Information System (INIS)

Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

2015-01-01

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E 0  = 2.6 V/μm and large EFE current density of J e  = 3.2 mA/cm 2 (at 5.3 V/μm)

Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

International Nuclear Information System (INIS)

Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

2011-01-01

A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

International Nuclear Information System (INIS)

Fainer, N.I.; Kosinova, M.L.; Maximovsky, E.A.; Rumyantsev, Yu.M.; Kuznetsov, F.A.; Kesler, V.G.; Kirienko, V.V.

2005-01-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO 2 and α-Si 3 N 4 . These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the α-Si 3 N 4 phase increases

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

Energy Technology Data Exchange (ETDEWEB)

Fainer, N.I. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation)]. E-mail: nadezhda@che.nsk.su; Kosinova, M.L. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Maximovsky, E.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Rumyantsev, Yu.M. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kuznetsov, F.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation); Kirienko, V.V. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation)

2005-05-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si{sub 2}NH(CH{sub 3}){sub 6} (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO{sub 2} and {alpha}-Si{sub 3}N{sub 4}. These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the {alpha}-Si{sub 3}N{sub 4} phase increases.

Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

International Nuclear Information System (INIS)

Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

2005-01-01

Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

Studies of internal stress in diamond films prepared by DC plasma chemical vapour deposition

International Nuclear Information System (INIS)

Wang Wanlu; Gao Jinying; Liao Kejun; Liu Anmin

1992-01-01

The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and microstructure with voids

Plasma CVD reactor with two-microwave oscillators for diamond film synthesis

International Nuclear Information System (INIS)

Nagatsu, M.; Miyake, M.; Maeda, J.

2006-01-01

In this study, we present the experimental results of a new type of microwave plasma CVD system, where two of 1.5 kW microwave sources were used for enlarging the plasma discharge and the diamond film growth. One of the microwave oscillators was used to produce the microwave plasma as in the conventional microwave plasma CVD device, while the second one was used to enlarge the plasma by introducing microwave from the launcher mounted at the substrate stage. We demonstrated the enlargement of plasma discharge area from 60 mm to 100 mm in diameter by using the two-microwave oscillators system. Characteristics of diamond films deposited using H 2 /CH 4 plasmas were also investigated using a scanning electron microscope (SEM) and Raman spectroscopy

Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

CERN Document Server

Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

1999-01-01

Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

International Nuclear Information System (INIS)

Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

2013-01-01

Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

A 3D tomographic EBSD analysis of a CVD diamond thin film

International Nuclear Information System (INIS)

Liu Tao; Raabe, Dierk; Zaefferer, Stefan

2008-01-01

We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

Effect of helium gas pressure on dc conduction mechanism and EMI shielding properties of nanocrystalline carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Rawal, Ishpal, E-mail: rawalishpal@gmail.com [Department of Physics, Kirori Mal College, University of Delhi, Delhi 110007 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Singh, Avanish Pratap; Dhawan, S.K. [Polymeric and Soft Materials Group, Physics Engineering of Carbon, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2015-05-05

This paper reports the effect of helium partial pressures ∼1.2 × 10{sup −5} (base pressure), 1.4 × 10{sup −4}, 8.6 × 10{sup −3} and 0.1 mbar on the variable range hopping conduction in nanocrystalline carbon thin films deposited by filtered cathodic jet carbon arc technique. High resolution transmission electron microscopy studies suggest the random distribution of nanocrystallites (∼3–7 nm) in the amorphous matrix. The DC conduction behavior of the deposited nanocrystalline films has been studied in the light of Mott's variable range hopping (VRH) model and found to obey three dimensional VRH conduction. The randomly distributed nanocrystallites in amorphous matrix may lead to change in the distribution of density of states near Fermi level and hence, the conduction behavior. The enhanced electrical conductivity of the deposited films due to the helium environment makes them suitable for electromagnetic interference shielding applications. The sample deposited at a helium partial pressure of 0.1 mbar has a value of shielding effectiveness ∼7.84 dB at 18 GHz frequency. - Highlights: • Nanocrystalline carbon thin films (NCTF) has been deposited by FCJCA technique. • Effect of helium gas pressure has been studied on the properties of NCTF. • Investigation of EMI shielding properties of NCTF has been carried out.

Thermoluminescent behavior of diamond thin films exposed to ultraviolet radiation

International Nuclear Information System (INIS)

Barboza F, M.; Gastelum, S.; Melendrez, R.; Chernov, V.; Bernal, R.; Cruz V, C.; Brown, F.

2002-01-01

In this work the thermoluminescent properties of diamond thin films are discussed which are grown up through the chemical vapor method exposed to ultraviolet radiation of 200-280 nm. The films with thickness 3, 6, 9, 12, 180 and 500 microns were grown up using a precursor gas formed of H 2 -CH 4 -CO excited through microwave energy or hot filament.The structure and morphology of the films were examined through scanning electron microscopy, indicating the formation of different diamond polycrystal structures which depend on the type of heating of the precursor gas used as well as the film dimensions. In general, the brilliance curve depends on the sample and the wavelength of the irradiation ultraviolet light, however it presents clearly thermoluminescence bands in 148, 160, 272, 304, 320 and 324 C degrees. The maximum of the thermoluminescence efficiency is obtained for the case of sample exposure with light of 214 nm. The sample of 500 microns is what exhibits greater thermoluminescent efficiency of those studied samples. The thermoluminescent behavior in function of radiation dose presents regions of linearity and supra linearity for higher and small doses respectively. The disappearance of the thermoluminescent signal depends on the characteristics of the film and it can reach until a 30 % of loss before to reach the stability. (Author)

Optical and mechanical properties of diamond like carbon films ...

Indian Academy of Sciences (India)

Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13.56 MHz rf power.

Evolution of structural and electrical properties of carbon films from amorphous carbon to nanocrystalline graphene on quartz glass by HFCVD.

Science.gov (United States)

Zhai, Zihao; Shen, Honglie; Chen, Jieyi; Li, Xuemei; Jiang, Ye

2018-04-25

Direct growth of graphene films on glass is of great importance but has so far met with limited success. The non-catalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphite-like carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 % to over 80 %. Based on systematically structural and chemical characterizations, a schematic process with three steps including sp2 chains aggregation, aromatic rings formation and sp3 bonds etch was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm2/(V·s) and a resistivity of 5.24×10-3 Ω·cm over an area of 1 cm2. Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localised and extended states respectively when increasing the temperature from 75 K to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-01-01

Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

Synthesis and characterization of boron incorporated diamond-like carbon thin films

International Nuclear Information System (INIS)

Zhang, L.L.; Yang, Q.; Tang, Y.; Yang, L.; Zhang, C.; Hu, Y.; Cui, X.

2015-01-01

Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B 4 C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B 4 C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp 3 bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp 3 bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp 3 bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films

Nanocrystalline diamond surfaces for adhesion and growth of primary neurons, conflicting results and rational explanation

Directory of Open Access Journals (Sweden)

Silviya Mikhailovna Ojovan

2014-06-01

Full Text Available Using a variety of proliferating cell types, it was shown that the surface of nanocrystalline-diamond (NCD provides a permissive substrate for cell adhesion and development without the need of complex chemical functionalization prior to cell seeding. In an extensive series of experiments we found that, unlike proliferating cells, post-mitotic primary neurons do not adhere to bare NCD surfaces when cultured in defined medium. These observations raise questions on the potential use of bare NCD as an interfacing layer for neuronal devices. Nevertheless, we also found that classical chemical functionalization methods render the hostile bare NCD surfaces with adhesive properties that match those of classically functionalized substrates used extensively in biomedical research and applications. Based on the results, we propose a mechanism that accounts for the conflicting results; which on one hand claim that un-functionalized NCD provides a permissive substrate for cell adhesion and growth, while other reports demonstrate the opposite.

A 3D tomographic EBSD analysis of a CVD diamond thin film

Directory of Open Access Journals (Sweden)

Tao Liu, Dierk Raabe and Stefan Zaefferer

2008-01-01

Full Text Available We have studied the nucleation and growth processes in a chemical vapor deposition (CVD diamond film using a tomographic electron backscattering diffraction method (3D EBSD. The approach is based on the combination of a focused ion beam (FIB unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Tiwari, Rajanish N.; Chang Li

2010-01-01

Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {100} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was ∼530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/μm) and high current-density (1.6 mA/cm 2 ) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

Growth, characterization, and device development in monocrystalline diamond films

Science.gov (United States)

Davis, Robert F.

1991-12-01

The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

Gas-sensing behaviour of ZnO/diamond nanostructures.

Science.gov (United States)

Davydova, Marina; Laposa, Alexandr; Smarhak, Jiri; Kromka, Alexander; Neykova, Neda; Nahlik, Josef; Kroutil, Jiri; Drahokoupil, Jan; Voves, Jan

2018-01-01

Microstructured single- and double-layered sensor devices based on p-type hydrogen-terminated nanocrystalline diamond (NCD) films and/or n-type ZnO nanorods (NRs) have been obtained via a facile microwave-plasma-enhanced chemical vapour deposition process or a hydrothermal growth procedure. The morphology and crystal structure of the synthesized materials was analysed with scanning electron microscopy, X-ray diffraction measurements and Raman spectroscopy. The gas sensing properties of the sensors based on i) NCD films, ii) ZnO nanorods, and iii) hybrid ZnO NRs/NCD structures were evaluated with respect to oxidizing (i.e., NO 2 , CO 2 ) and reducing (i.e., NH 3 ) gases at 150 °C. The hybrid ZnO NRs/NCD sensor showed a remarkably enhanced NO 2 response compared to the ZnO NRs sensor. Further, inspired by this special hybrid structure, the simulation of interaction between the gas molecules (NO 2 and CO 2 ) and hybrid ZnO NRs/NCD sensor was studied using DFT calculations.

Evaluation of the adhesion strength of diamond films brazed on K-10 type hard metal

Directory of Open Access Journals (Sweden)

Santos Sérgio Ivan dos

2004-01-01

Full Text Available The coating of cutting tools with diamond films considerably increases the tool performance due to the combination of the unique tribological properties of diamond with the bulk properties of the substrate (toughness. The tool performance, however, is strongly related to the adhesion strength between the film and the substrate. In this work our main goal was to propose and to test a procedure, based on a tensile strength test, to evaluate the adhesion strength of a diamond wafer brazed on a hard metal substrate, taking into account the effect of the brazing temperature and time. The temperature range studied was from 800 to 980 °C and the brazing time ranged from 3 to 40 min. The obtained results could be used to optimize the costs and time required to the production of high performance cutting tools with brazed diamond wafers.

Optical properties of diamond like carbon nanocomposite thin films

Science.gov (United States)

Alam, Md Shahbaz; Mukherjee, Nillohit; Ahmed, Sk. Faruque

2018-05-01

The optical properties of silicon incorporated diamond like carbon (Si-DLC) nanocomposite thin films have been reported. The Si-DLC nanocomposite thin film deposited on glass and silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process. Fourier transformed infrared spectroscopic analysis revealed the presence of different bonding within the deposited films and deconvolution of FTIR spectra gives the chemical composition i.e., sp3/sp2 ratio in the films. Optical band gap calculated from transmittance spectra increased from 0.98 to 2.21 eV with a variation of silicon concentration from 0 to 15.4 at. %. Due to change in electronic structure by Si incorporation, the Si-DLC film showed a broad photoluminescence (PL) peak centered at 467 nm, i.e., in the visible range and its intensity was found to increase monotonically with at. % of Si.

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

Science.gov (United States)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

Synthesis of diamond films by pulsed liquid injection chemical vapor deposition using a mixture of acetone and water as precursor

International Nuclear Information System (INIS)

Apatiga, L.M.; Morales, J.

2009-01-01

A chemical vapor deposition reactor based on the flash evaporation of an organic liquid precursor was used to grow diamond films on Si substrates. An effective pulsed liquid injection mechanism consisting of an injector, normally used for fuel injection in internal combustion engines, injects micro-doses of the precursor to the evaporation zone at 280 o C and is instantly evaporated. The resulting vapor mixture is transported by a carrier gas to the high-temperature reaction chamber where the diamond nucleates and grows on the substrate surface at temperatures ranging from 750 to 850 o C. The injection frequency, opening time, number of pulses and other injector parameters are controlled by a computer-driven system. The diamond film morphology and structure were characterized by scanning electron microscopy and Raman spectroscopy. The as-deposited diamond films show a ball-shaped morphology with a grain size that varies from 100 to 400 nm, as well as the characteristic diamond Raman band at 1332 cm -1 . The effects of the experimental parameters and operation principle on the diamond films quality are analyzed and discussed in terms of crystallinity, composition, structure, and morphology.

The bonding of protective films of amorphic diamond to titanium