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Sample records for nanochastitsy bi te

  1. Ga-Bi-Te system

    International Nuclear Information System (INIS)

    Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

    1976-01-01

    To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

  2. Superstrengthening Bi2Te3 through Nanotwinning

    Science.gov (United States)

    Li, Guodong; Aydemir, Umut; Morozov, Sergey I.; Wood, Max; An, Qi; Zhai, Pengcheng; Zhang, Qingjie; Goddard, William A.; Snyder, G. Jeffrey

    2017-08-01

    Bismuth telluride (Bi2Te3 ) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi2Te3 can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi2Te3 is the weak van der Waals interaction between the Te1 coupling two Te 1 - Bi - Te 2 - Bi - Te 1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi2Te3 (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi2Te3 TE semiconductors for high-performance TE devices.

  3. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    KAUST Repository

    Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

    2010-01-01

    We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

  4. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    International Nuclear Information System (INIS)

    Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

    2010-01-01

    We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

  5. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    KAUST Repository

    Xiong, Ka

    2010-03-04

    We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

  6. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  7. Optical spectroscopy and Fermi surface studies of BiTeCl and BiTeBr

    Science.gov (United States)

    Martin, Catalin; Suslov, A. V.; Buvaev, S.; Hebard, A. F.; Bugnon, Philippe; Berger, Helmuth; Magrez, Arnaud; Tanner, D. B.

    2014-03-01

    The observation of a large bulk Rashba effect in the non-centrosymmetric semiconductors BiTeX(X=Cl, Br, I) has stimulated the interest in these sys- tems, as promising candidates for studying spin related phenomena and for the realization of spin devices. Here we present a comparative study of the electronic properties of BiTeCl and BiTeBr, determined from temperature dependent infrared spectroscopy and Shubnikov-de Haas oscillations. In par- ticular, we compare the angle dependence of quantum oscillations between the two compounds and discuss possible differences between the topology of their Fermi surfaces. Supported by NSF Cooperative Agreement DMR-1157490 to the National High Magnetic Field Laboratory.

  8. Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

    KAUST Repository

    Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

    2013-01-01

    By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

  9. Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

    KAUST Repository

    Zhu, Zhiyong

    2013-02-06

    By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

  10. Thermoelectric properties of Bi2Te3 base solid solutions in the Bi2Te3-InS system

    International Nuclear Information System (INIS)

    Safarov, M.G.; Rustamov, P.G.; Alidzhanov, M.A.

    1979-01-01

    The rich Bi 2 Te 3 part ot the Bi 2 Te 3 -InS constitutional diagram has been studied with a view to produce new Bi 2 Te 3 -based solid solutions and to establish the maximum solubility of InS in Bi 2 Te 3 . The methods of differential-thermal, X-ray phase and microstructural analysis have been used. The alloys microhardness, density and thermal electric properties have been measured. A large region of Bi 2 Te 3 -based restricted solid solutions has been detected; it reaches 14.0 mol.% InS at room temperature. Studied have been the thermoelectromotive forces, electric and thermal conductivity of the alloys, containing up to 5 mol.% InS in the 300-700 K temperature range

  11. Superconducting transition in TlBiTe/sub 2/ and TlTe compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kantser, V G; Popovich, N S; Sidorenko, A S

    1985-10-01

    On the basis of zone structure calculation for TlBiTe/sub 2/ and TlTe it is found that TlBiTe/sub 2/ is a narrow-gap semiconductor and TlTe is a p-metal. At Tsub(c)=0.19 K TlTe is found to experience the superconducting transition. In TlBiTe/sub 2/ superconductivity is not observed to occur up to 0.05 K, since there is a possibility of occupying the high density of states zones because they are remote from actual ones. The earlier discovered superconducting transition in TlBiTe/sub 2/ is inherent in the alien phase of TlTe.

  12. On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI

    International Nuclear Information System (INIS)

    Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

    2012-01-01

    The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI 3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

  13. Thermoelectric Response in Single Quintuple Layer Bi2Te3

    KAUST Repository

    Sharma, S.; Schwingenschlö gl, Udo

    2016-01-01

    of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations

  14. Partial enthalpies of Bi and Te in Bi-Te melts and of In and Te in In-Te melts

    International Nuclear Information System (INIS)

    Yassin, Abeer; Amzil, Abdelhamid; Castanet, Robert

    2000-01-01

    Full text.Calorimetric measurement are reported which allow the enthalpic behaviour of Bi-Te melts to be established. Further work is required, however, to supplement results obtained for In-Te melts. The partial enthalpies of bismuth and tellurium in the Bi-Te melts at 755K and those of indium and tellurium in the In-Te melts at 1010 and 987K were measured at high dilution by direct reaction calorimetry (drop method) with the help of a Tian-Calvet calorimeter. The limiting partial enthalpies of the components were deduced by extrapolation at infinite dilution: Δh f,∞ B i(755K)/KJ.mol -1 = -34.0 and Δh f,∞ Te(755K) /KJ·mol -1 = -24.1 in the Bi-Te melts Δh f,∞ In(1010K) /KJ·mol -1 = -75.9 and Δh f,∞ Te(1010K) /KJ·mol -1 = -47.8 in the In-Te melts Δh f,∞ In(987K) /KJ·mol -1 = -75.2 and Δh f,∞ Te(987K) /KJ·mol -1 = -48.0 in the In-Te melts

  15. Rashba split surface states in BiTeBr

    International Nuclear Information System (INIS)

    Eremeev, S V; Rusinov, I P; Nechaev, I A; Chulkov, E V

    2013-01-01

    Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin–orbit splitting. The Te-terminated surface-state spin splitting has Rashba-type behavior with the coupling parameter α R ∼ 2 eVÅ. (paper)

  16. Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure

    OpenAIRE

    Zhao, Yanfei; Chang, Cui-Zu; Jiang, Ying; DaSilva, Ashley; Sun, Yi; Wang, Huichao; Xing, Ying; Wang, Yong; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Jian

    2013-01-01

    In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (MBE). In situ angle-resolved photoemission spectroscopy (ARPES) provides direct evidence that the su...

  17. Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

    Directory of Open Access Journals (Sweden)

    Hao Xu

    2015-08-01

    Full Text Available Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

  18. Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

    OpenAIRE

    Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; Zhiltsov, N. S.; Golyashov, V. A.; Tereshchenko, O. E.; Prosvirin, I. P.; Kokh, K. A.; Sawada, M.

    2018-01-01

    Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the firs...

  19. LaBiTe3: An unusual thermoelectric material

    KAUST Repository

    Singh, Nirpendra

    2014-06-18

    Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

  20. LaBiTe3: An unusual thermoelectric material

    KAUST Repository

    Singh, Nirpendra; Schwingenschlö gl, Udo

    2014-01-01

    Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

  1. On atomic mechanisms governing the oxidation of Bi2Te3

    Science.gov (United States)

    Music, Denis; Chang, Keke; Schmidt, Paul; Braun, Felix N.; Heller, Martin; Hermsen, Steffen; Pöllmann, Peter J.; Schulzendorff, Till; Wagner, Cedric

    2017-12-01

    Oxidation of Bi2Te3 (space group R \\overline{3} m) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi2Te3 is at equilibrium with Bi2O3 and TeO2, whereby the most stable compound is Bi2Te3, followed by Bi2O3. The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi2Te3(0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi2Te3 thermoelectric devices.

  2. Bulk band structure of Bi2Te3

    DEFF Research Database (Denmark)

    Michiardi, Matteo; Aguilera, Irene; Bianchi, Marco

    2014-01-01

    -electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of Bi2Te3 when compared to LDA. Experimental and calculated results are compared in the spectral regions where...

  3. Dispersion interactions between neighboring Bi atoms in (BiH3 )2 and Te(BiR2 )2.

    Science.gov (United States)

    Haack, Rebekka; Schulz, Stephan; Jansen, Georg

    2018-03-13

    Triggered by the observation of a short Bi⋯Bi distance and a BiTeBi bond angle of only 86.6° in the crystal structure of bis(diethylbismuthanyl)tellurane quantum chemical computations on interactions between neighboring Bi atoms in Te(BiR 2 ) 2 molecules (R = H, Me, Et) and in (BiH 3 ) 2 were undertaken. Bi⋯Bi distances atoms were found to significantly shorten upon inclusion of the d shells of the heavy metal atoms into the electron correlation treatment, and it was confirmed that interaction energies from spin component-scaled second-order Møller-Plesset theory (SCS-MP2) agree well with coupled-cluster singles and doubles theory including perturbative triples (CCSD(T)). Density functional theory-based symmetry-adapted perturbation theory (DFT-SAPT) was used to study the anisotropy of the interplay of dispersion attraction and steric repulsion between the Bi atoms. Finally, geometries and relative stabilities of syn-syn and syn-anti conformers of Te(BiR 2 ) 2 (R = H, Me, Et) and interconversion barriers between them were computed. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

  4. The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

    Science.gov (United States)

    Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

    2016-02-01

    We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

  5. The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

  6. Thermoelectric Response in Single Quintuple Layer Bi2Te3

    KAUST Repository

    Sharma, S.

    2016-10-05

    Because Bi2Te3 belongs to the most important thermoelectric materials, the successful exfoliation of a single quintuple layer has opened access to an interesting two-dimensional material. For this reason, we study the thermoelectric properties of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations. The dependence of the lattice thermal conductivity on the phonon mean free path is evaluated along with the contributions of the acoustic and optical branches. We find that the thermoelectric response is significantly better for p- than for n-doping. By optimizing the carrier concentration, at 300 K, a ZT value of 0.77 is achieved, which increases to 2.42 at 700 K.

  7. Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

    Science.gov (United States)

    Kohri, Hitoshi; Yagasaki, Takayoshi

    2018-02-01

    Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

  8. Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

    Science.gov (United States)

    Kohri, Hitoshi; Yagasaki, Takayoshi

    2018-06-01

    Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

  9. Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

    KAUST Repository

    Cheng, Wei; Ren, Shang-Fen

    2011-01-01

    Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

  10. Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

    KAUST Repository

    Cheng, Wei

    2011-03-10

    Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

  11. Effect of surface treatment of thermoelectric materials on the properties of thermoelements made from solid solutions of Bi2Te3-Bi2Se3 and Bi2Te3-Sb2Te3 systems

    International Nuclear Information System (INIS)

    Alieva, T.D.; Abdinov, D.Sh.; Salaev, Eh.Yu.

    1981-01-01

    Effect of surface treatment technology of samples of solid solutions of Ei 2 Te 3 -Bi 2 Se 3 and Bi 2 Te 3 -Sb 2 Te 3 systems on their thermoelectric efficiency is studied. Branches of thermoelements have been produced with the help of electroerosion or mechanical cutting of monocrystal ingots of semiconducting solid Bi 2 Te 3 -base solutions. It is shown that in case of the treatment of side surfaces of branches of thermoelements produced of monocrystals of Bi 2 Te 3 base solid solutions their thermoelectrical efficiency grows considerably. Maximum growth of efficiency (approximately 20%) is observed during mechanical grinding of branches surfaces with diamond paste with the following chemical or electrochemical etching [ru

  12. Thermoelectric transport properties of BaBiTe{sub 3}-based materials

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

    2017-05-15

    BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.

  13. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  14. Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi2Se3, Bi2Te3 and Sb2Te3

    International Nuclear Information System (INIS)

    Dordevic, S V; Wolf, M S; Stojilovic, N; Lei Hechang; Petrovic, C

    2013-01-01

    We present the results of an infrared spectroscopy study of topological insulators Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 . Reflectance spectra of all three materials look similar, with a well defined plasma edge. However, there are some important differences. Most notably, as temperature decreases the plasma edge shifts to lower frequencies in Bi 2 Se 3 , whereas in Bi 2 Te 3 and Sb 2 Te 3 it shifts to higher frequencies. In the loss function spectra we identify asymmetric broadening of the plasmon, and assign it to the presence of charge inhomogeneities. It remains to be seen if charge inhomogeneities are characteristic of all topological insulators, and whether they are of intrinsic or extrinsic nature.

  15. Enhanced thermoelectric properties of polycrystalline Bi2Te3 core fibers with preferentially oriented nanosheets

    Directory of Open Access Journals (Sweden)

    Min Sun

    2018-03-01

    Full Text Available Bi2Te3-based materials have been reported to be one of the best room-temperature thermoelectric materials, and it is a challenge to substantially improve their thermoelectric properties. Here novel Bi2Te3 core fibers with borosilicate glass cladding were fabricated utilizing a modified molten core drawing method. The Bi2Te3 core of the fiber was found to consist of hexagonal polycrystalline nanosheets, and polycrystalline nanosheets had a preferential orientation; in other words, the hexagonal Bi2Te3 lamellar cleavage more tended to be parallel to the symmetry axis of the fibers. Compared with a homemade 3-mm-diameter Bi2Te3 rod, the polycrystalline nanosheets’ preferential orientation in the 89-μm-diameter Bi2Te3 core increased its electrical conductivity, but deduced its Seebeck coefficient. The Bi2Te3 core exhibits an ultrahigh ZT of 0.73 at 300 K, which is 232% higher than that of the Bi2Te3 rod. The demonstration of fibers with oriented nano-polycrystalline core and the integration with an efficient fabrication technique will pave the way for the fabrication of high-performance thermoelectric fibers.

  16. High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

    Energy Technology Data Exchange (ETDEWEB)

    Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2016-07-21

    In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

  17. Thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions prepared by attrition milling and hot pressing

    International Nuclear Information System (INIS)

    Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

    2014-01-01

    Bi 2 Te 3-y Se y (y = 0.15 - 0.6) solid solutions were prepared by attrition milling and hot pressing. The lattice constants decreased with increasing Se content, indicating that the Se atoms were successfully substituted into the Te sites. All specimens exhibited n-type conduction, and their electrical resistivities increased slightly with increasing temperature. With increasing Se content, the Seebeck coefficients increased while the thermal conductivity decreased due to the increase in phonon scattering. The maximum figure of merit obtained was 0.63 at 440 K for the undoped Bi 2 Te 2.4 Se 0.6 solid solution.

  18. Equilibrium state of delta-phase with tellurium in the Sb-Bi-Te system

    International Nuclear Information System (INIS)

    Gajgukova, V.S.; Dudkin, L.D.; Erofeev, R.S.; Musaelyan, V.V.; Nadzhip, A.Eh.; Sokolov, O.B.

    1978-01-01

    A research has been carried out with a view to establish the equilibrium state of delta-phase of the composition (Sbsub(1-x)Bisub(x)) 2 Te 3 with tellurium, depending on x and temperature. The Hall effect, the thermoelectromotive force, and the electric conductivity of the samples of Sb-Bi-Te alloys have been measured, the samples being annealed at various temperatures (550 to 250 deg C). The measurement results have shown that as the Bi 2 Te 3 content in the solid solutions increases and temperature decreases, the delta-phase-Te boundary monotonously approaches the stoichiometric composition. Using the research carrid out as the basis, the general character of the equilibrium delta-phase with tellurium boundary has been rendered more precise in Sb-Bi-Te system, depending on the temperature and Bi content (up to 25 at.%)

  19. Effects of Lu and Tm Doping on Thermoelectric Properties of Bi2Te3 Compound

    Science.gov (United States)

    Yaprintsev, Maxim; Lyubushkin, Roman; Soklakova, Oxana; Ivanov, Oleg

    2018-02-01

    The Bi2Te3, Bi1.9Lu0.1Te3 and Bi1.9Tm0.1Te3 thermoelectrics of n-type conductivity have been prepared by the microwave-solvothermal method and spark plasma sintering. These compounds behave as degenerate semiconductors from room temperature up to temperature T d ≈ 470 K. Within this temperature range the temperature behavior of the specific electrical resistivity is due to the temperature changes of electron mobility determined by acoustic and optical phonon scattering. Above T d, an onset of intrinsic conductivity takes place when electrons and holes are present. At the Lu and Tm doping, the Seebeck coefficient increases, while the specific electrical resistivity and total thermal conductivity decrease within the temperature 290-630 K range. The increase of the electrical resistivity is related to the increase of electron concentration since the Tm and Lu atoms are donor centres in the Bi2Te3 lattice. The increase of the density-of-state effective mass for conduction band can be responsible for the increase of the Seebeck coefficient. The decrease of the total thermal conductivity in doped Bi2Te3 is attributed to point defects like the antisite defects and Lu or Tm atoms substituting for the Bi sites. In addition, reducing the electron thermal conductivity due to forming a narrow impurity (Lu or Tm) band having high and sharp density-of-states near the Fermi level can effectively decrease the total thermal conductivity. The thermoelectric figure-of-merit is enhanced from ˜ 0.4 for undoped Bi2Te3 up to ˜ 0.7 for Bi1.9Tm0.1Te3 and ˜ 0.9 for Bi1.9Lu0.1Te3.

  20. Electrochemically deposited BiTe-based nano wires for thermoelectric applications

    International Nuclear Information System (INIS)

    Inn-Khuan, N.; Kuan-Ying, K.; Che Zuraini Che Abdul Rahman; Nur Ubaidah Saidin; Suhaila Hani Ilias; Thye-Foo, C.

    2013-01-01

    Full-text: Nano structured materials systems such as thin-films and nano wires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nano wires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nano wires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltametry (LSV). Chemical compositions of the nano wires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nano wires indicated that while the Sb content in BiSbTe nano wires increased with more negative deposition potentials, the formation of Te 0 and Bi 2 Te 3 were favorable at more positive potentials. (author)

  1. Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

    International Nuclear Information System (INIS)

    Yan, Y J; Ren, M Q; Liu, X; Huang, Z C; Jiang, J; Fan, Q; Miao, J; Xie, B P; Zhang, T; Feng, D L; Xiang, F; Wang, X

    2015-01-01

    Recently, the non-centrosymmetric bismuth tellurohalides such as BiTeCl are being studied as possible candidates for topological insulators. While some photoemission studies showed that BiTeCl is an inversion asymmetric topological insulator, others showed that it is a normal semiconductor with Rashba splitting. Meanwhile, first-principle calculations have failed to confirm the existence of topological surface states in BiTeCl so far. Therefore, the topological nature of BiTeCl requires further investigation. Here we report a low-temperature scanning tunneling microscopy study on the surface states of BiTeCl single crystals. On the tellurium (Te) -terminated surfaces with relatively low defect density, evidence for topological surface states is observed in the quasi-particle interference patterns, both in the anisotropy of the scattering vectors and the fast decay of the interference near the step edges. Meanwhile, on the samples with much higher defect densities, we observed surface states that behave differently. Our results may help to resolve the current controversy on the topological nature of BiTeCl. (paper)

  2. Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

    Science.gov (United States)

    Concepción, O.; Escobosa, A.; de Melo, O.

    2018-03-01

    Bismuth telluride (Bi2Te3), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi2Te3 by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.

  3. High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

    Science.gov (United States)

    Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

    2018-06-01

    In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

  4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

    Science.gov (United States)

    Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng

    2009-06-01

    Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1-x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

  5. Annealing-Induced Bi Bilayer on Bi2Te3 Investigated via Quasi-Particle-Interference Mapping.

    Science.gov (United States)

    Schouteden, Koen; Govaerts, Kirsten; Debehets, Jolien; Thupakula, Umamahesh; Chen, Taishi; Li, Zhe; Netsou, Asteriona; Song, Fengqi; Lamoen, Dirk; Van Haesendonck, Chris; Partoens, Bart; Park, Kyungwha

    2016-09-27

    Topological insulators (TIs) are renowned for their exotic topological surface states (TSSs) that reside in the top atomic layers, and hence, detailed knowledge of the surface top atomic layers is of utmost importance. Here we present the remarkable morphology changes of Bi2Te3 surfaces, which have been freshly cleaved in air, upon subsequent systematic annealing in ultrahigh vacuum and the resulting effects on the local and area-averaging electronic properties of the surface states, which are investigated by combining scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and Auger electron spectroscopy (AES) experiments with density functional theory (DFT) calculations. Our findings demonstrate that the annealing induces the formation of a Bi bilayer atop the Bi2Te3 surface. The adlayer results in n-type doping, and the atomic defects act as scattering centers of the TSS electrons. We also investigated the annealing-induced Bi bilayer surface on Bi2Te3 via voltage-dependent quasi-particle-interference (QPI) mapping of the surface local density of states and via comparison with the calculated constant-energy contours and QPI patterns. We observed closed hexagonal patterns in the Fourier transform of real-space QPI maps with secondary outer spikes. DFT calculations attribute these complex QPI patterns to the appearance of a "second" cone due to the surface charge transfer between the Bi bilayer and the Bi2Te3. Annealing in ultrahigh vacuum offers a facile route for tuning of the topological properties and may yield similar results for other topological materials.

  6. Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

    Science.gov (United States)

    Du, Zengyi

    2018-01-01

    Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

  7. Effects of current stressing on the p-Bi2Te3/Sn interfacial reactions

    International Nuclear Information System (INIS)

    Chan, Hsing-Ting; Lin, Chih-Fan; Yen, Yee-Wen; Chen, Chih-Ming

    2016-01-01

    The Sn/p-Bi 2 Te 3 /Sn sandwich-type sample was current stressed with a density of 150 A/cm 2 to investigate the effects of current stressing on the p-Bi 2 Te 3 /Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi 2 Te 3 (50 °C) and cathodic p-Bi 2 Te 3 /Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi 2 Te 3 /Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10 −9 cm 2 s −1 at 120 °C. - Highlights: • Sn/p-Bi 2 Te 3 /Sn sandwich-type sample is current stressed with a density of 150 A/cm 2 . • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

  8. Development of Bi-Sb-Te ternary alloy with compositionally graded structure

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, A; Ohta, T

    1997-07-01

    Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

  9. Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

    Science.gov (United States)

    Chi, Hang; Uher, Ctirad

    2014-03-01

    At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

  10. Experimental and density functional study of Mn doped Bi2Te3 topological insulator

    Directory of Open Access Journals (Sweden)

    A. Ghasemi

    2016-12-01

    Full Text Available We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

  11. Local Seebeck coefficient near the boundary in touching Cu/Bi-Te/Cu composites

    International Nuclear Information System (INIS)

    Yamashita, O.; Odahara, H.

    2007-01-01

    The thermo-emf ΔV and temperature difference ΔT across the boundary were measured as a function of r for the touching p- and n-type Cu/Bi-Te/Cu composites composed of a combination of t Bi-Te =2.0 mm and t Cu =0.3 mm, where ΔT is produced by imposing a constant voltage of 1.7 V on two Peltier modules connected in series and r is the distance from the boundary that corresponds to the interval s between two thermocouples. The resultant Seebeck coefficient α across the boundary was obtained from the relation α=ΔV/ΔT. As a result, the resultant α of the touching p- and n-type composites have surprisingly great local maximum values of 1330 and -1140 μV/K at r∼0.03 mm, respectively, and decreased rapidly with an increase of r to approach the Seebeck coefficients of the intrinsic Bi-Te compounds. The resultant maximum α of the touching p- and n-type Cu/Bi-Te/Cu composites are approximately 5.4 and 5.5 times higher in absolute value than those of the intrinsic Bi-Te compounds, respectively. It was thus clarified for the first time that the local Seebeck coefficient is enhanced most strongly in the Bi-Te region where there is an approximately 30-μm distance from the boundary, not at the boundary between Bi-Te compounds and copper. (orig.)

  12. Protective capping of topological surface states of intrinsically insulating Bi2Te3

    Directory of Open Access Journals (Sweden)

    Katharina Hoefer

    2015-09-01

    Full Text Available We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology.

  13. Fabrication and characterization of the p-type (Bi2Te3)x(Sb2Te3)1 ...

    Indian Academy of Sciences (India)

    electric materials in the composition range x = 0⋅2–0⋅3. (Yang et al 2000), but with improved thermoelectric properties, have been prepared by the zone melting method. The influence of Bi2Te3 content on thermoelectric properties was studied at room temperature. The results showed that the maximum figure of merit ...

  14. Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 (China); Song, Yuxin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se; Gong, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Lu, Pengfei [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2015-08-15

    Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

  15. Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential

    KAUST Repository

    Kong, Desheng

    2010-06-09

    A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.

  16. Fabrication Process and Thermoelectric Properties of CNT/Bi2(Se,Te3 Composites

    Directory of Open Access Journals (Sweden)

    Kyung Tae Kim

    2015-01-01

    Full Text Available Carbon nanotube/bismuth-selenium-tellurium composites were fabricated by consolidating CNT/Bi2(Se,Te3 composite powders prepared from a polyol-reduction process. The synthesized composite powders exhibit CNTs homogeneously dispersed among Bi2(Se,Te3 matrix nanopowders of 300 nm in size. The powders were densified into a CNT/Bi2(Se,Te3 composite in which CNTs were randomly dispersed in the matrix through spark plasma sintering process. The effect of an addition of Se on the dimensionless figure-of-merit (ZT of the composite was clearly shown in 3 vol.% CNT/Bi2(Se,Te3 composite as compared to CNT/Bi2Te3 composite throughout the temperature range of 298 to 473 K. These results imply that matrix modifications such as an addition of Se as well as the incorporation of CNTs into bismuth telluride thermoelectric materials is a promising means of achieving synergistic enhancement of the thermoelectric performance levels of these materials.

  17. Process controls for Bi2Te3-Sb2Te3 prepared by mechanical alloying and hot pressing

    International Nuclear Information System (INIS)

    Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

    2014-01-01

    p-Type Bi 2 Te 3 -Sb 2 Te 3 solid solutions were prepared by mechanical alloying (MA) and hot pressing (HP) under different process conditions, after which the transport and the thermoelectric properties were evaluated. The relative densities of all hot-pressed specimens were over 98%, and the microstructure and crystal orientation were independent of the HP direction. All specimens exhibited p-type conduction, and the electrical resistivity was observed to increase slightly with increasing temperature, indicating a degenerate semiconductor behavior. The carrier concentration decreased with increasing HP temperature while the mobility increased. The maximum figure of merit obtained was 0.86 at 323 K for Bi 0.5 Sb 1.5 Te 3 hot-pressed at 648 K.

  18. Observation of antiphase coherent phonons in the warped Dirac cone of Bi2Te3

    Science.gov (United States)

    Golias, E.; Sánchez-Barriga, J.

    2016-10-01

    In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi2Te3 . Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A1 g coherent-phonon mode in Bi2Te3 . We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the Γ K ¯ and the Γ M ¯ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi2Te3 .

  19. Biting back: BiTE antibodies as a promising therapy for acute myeloid leukemia.

    Science.gov (United States)

    Walter, Roland B

    2014-06-01

    The experience with gemtuzumab ozogamicin has highlighted both the potential value and limitations of antibodies in acute myeloid leukemia (AML). Recently, bispecific T-cell engager (BiTE) antibodies have emerged as a means to harness polyclonal cytotoxic T-cells and cause highly efficient lysis of targeted tumor cells. Promising early results have been obtained with the CD19-directed BiTE antibody, blinatumomab, in patients with acute lymphoblastic leukemia. A first candidate for AML is the CD33/CD3 molecule, AMG 330, for which several recent preclinical studies demonstrated high potency and efficacy in destroying CD33(+) human AML cells. Many questions remain to be addressed, but BiTE antibodies may offer an exciting new tool in a disease for which the outcomes in many patients remain unsatisfactory.

  20. Thermoelectric properties of quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2014-01-25

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound. -- Abstract: The quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data.

  1. Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

    International Nuclear Information System (INIS)

    Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

    2014-01-01

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

  2. Enhanced low-temperature thermoelectrical properties of BiTeCl grown by topotactic method

    International Nuclear Information System (INIS)

    Jacimovic, J.; Mettan, X.; Pisoni, A.; Gaal, R.; Katrych, S.; Demko, L.; Akrap, A.; Forro, L.; Berger, H.; Bugnon, P.; Magrez, A.

    2014-01-01

    We developed a topotactic strategy to grow BiTeCl single crystals. Structural characterization by means of X-ray diffraction was performed, and the high crystallinity of the material was proven. Measurements of the thermoelectrical coefficients electrical resistivity, thermoelectric power and thermal conductivity show an enhanced room temperature power factor of 20 μW cm −1 K −2 . The high value of the figure of merit (ZT = 0.17) confirms that BiTeCl is a promising material for engineering in thermoelectric applications at low temperature

  3. Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

    Science.gov (United States)

    Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

    2018-06-01

    In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

  4. Observation of hidden atomic order at the interface between Fe and topological insulator Bi2Te3.

    Science.gov (United States)

    Sánchez-Barriga, Jaime; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Volykhov, Andrey A; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I; Koch, Roland J; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V

    2017-11-22

    To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi 2 Te 3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi 2 Te 3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi 2 Te 3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2-5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi 2 Te 3 leading to the formation of septuple layers of Bi 3 Te 4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices.

  5. Transverse peltier effect in Pb-Bi{sub 2}Te{sub 3} multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Reitmaier, Christina; Walther, Franziska; Kyarad, Amir; Lengfellner, Hans [University of Regensburg (Germany)

    2009-07-01

    Metal-semiconductor multilayer structures show, according to model calculations, large anisotropy in their electrical and thermal transport properties. Multilayer stacks consisting of alternating layers of Pb and n-type Bi{sub 2}Te{sub 3} and prepared by a heating procedure displayed large thermoelectric anisotropy up to {delta}S{approx}200 {mu} V/K, depending on the thickness ratio p=d{sub BiTe}/d{sub Pb}, where d{sub BiTe} and d{sub Pb} are the thicknesses of Bi{sub 2}Te{sub 3} and Pb layers, respectively. From multilayer stacks, tilted samples with layers inclined with respect to the sample surface where obtained by cutting stacks obliquely to the stack axis. Non-zero off-diagonal elements in the Seebeck-tensor describing the thermopower of tilted samples allow for the occurance of a transverse Peltier effect. Experimental results demonstrate cooling by the transverse Peltier effect and are compared to model calculations.

  6. Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers

    Science.gov (United States)

    Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.

    2018-04-01

    In systems with breaking of inversion symmetry a perpendicular electric field arises that interacts with the conduction electrons. It may give rise to electron state splitting even without influence of external magnetic field due to the spin-orbital interaction (SOI). Such a removal of the spin degeneracy is called the Rashba effect. Nanostructure with the Rashba effect can be part of a spin transistor. Spin degeneracy can be realized in a channel from a material of this type without additive of magnetic ions. Lack of additive increases the charge carrier mobility and reliability of the device. Ab initio simulations of BiTeX (X=Cl, Br, I) monolayers have been carried out using VASP wherein implemented DFT method. The study of this structures is of interest because such sort of structures can be used their as spin-orbitronics materials. The crystal parameters of BiTeCl, BiTeBr, BiTeI have been determined by the ionic relaxation and static calculations. It is necessary to note that splitting of energy bands occurs in case of SOI included. The values of the Rashba coefficient aR (in the range from 6.25 to 10.00 eV·Å) have high magnitudes for spintronics materials. Band structure of monolayers structures have ideal Rashba electron gas, i.e. there no other energy states near to Fermi level except Rashba states.

  7. Fabrication and Characterization of Bi2Te3-Based Chip-Scale Thermoelectric Energy Harvesting Devices

    Science.gov (United States)

    Cornett, Jane; Chen, Baoxing; Haidar, Samer; Berney, Helen; McGuinness, Pat; Lane, Bill; Gao, Yuan; He, Yifan; Sun, Nian; Dunham, Marc; Asheghi, Mehdi; Goodson, Ken; Yuan, Yi; Najafi, Khalil

    2017-05-01

    Thermoelectric energy harvesters convert otherwise wasted heat into electrical energy. As a result, they have the potential to play a critical role in the autonomous wireless sensor network signal chain. In this paper, we present work carried out on the development of Bi2Te3-based thermoelectric chip-scale energy harvesting devices. Process flow, device demonstration and characterization are highlighted.

  8. Formation of Dense Pore Structure by Te Addition in Bi0.5Sb1.5Te3: An Approach to Minimize Lattice Thermal Conductivity

    Directory of Open Access Journals (Sweden)

    Syed Waqar Hasan

    2013-01-01

    Full Text Available We herein report the electronic and thermal transport properties of p-type Bi0.5Sb1.5Te3 polycrystalline bulks with dense pore structure. Dense pore structure was fabricated by vaporization of residual Te during the pressureless annealing of spark plasma sintered bulks of Te coated Bi0.5Sb1.5Te3 powders. The lattice thermal conductivity was effectively reduced to the value of 0.35 W m−1 K−1 at 300 K mainly due to the phonon scattering by pores, while the power factor was not significantly affected. An enhanced ZT of 1.24 at 300 K was obtained in spark plasma sintered and annealed bulks of 3 wt.% Te coated Bi0.5Sb1.5Te3 by these synergetic effects.

  9. Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

    KAUST Repository

    Cha, Judy J.; Kong, Desheng; Hong, Seung-Sae; Analytis, James G.; Lai, Keji; Cui, Yi

    2012-01-01

    Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

  10. Quantitative EDX microanalysis of Bi2Te3 in the TEM

    International Nuclear Information System (INIS)

    Peranio, N.; Eibl, O.

    2007-01-01

    Quantitative chemical analysis by energy dispersive X-ray spectrometry (EDX) in a transmission electron microscope (TEM) Zeiss912 and ohm; was applied to p-type (Bi,Sb) 2 Te 3 and n-type Bi 2 (Te,Se) 3 thermoelectric materials. Preliminary results yielded artifacts due to Bi spurious X-rays and hole-counts significantly beyond zero. A stray aperture was inserted in the TEM to absorb the stray radiation. With this aperture inserted a high-accuracy quantitative chemical analysis was established. The hole-counts decreased by a factor of 5 and the scatter of data decreased by a factor of 4 with respect to no aperture inserted. The mole fractions of Te and Se were 54.4 at% and 5.5 at% and varied by 0.5 at% for n-type material. A similar behaviour was found for Sb and Bi in p-type material. The variation in stoichiometry is smaller on the sub-micrometer scale and increases with increasing length scale for both, n-type and p-type Bi 2 Te 3 . Measurements in the TEM confirmed the inhomogeneous chemical composition found by wavelength dispersive X-ray spectrometry. The improved accuracy of the quantitative EDX analysis is also important for other compounds with unique physical properties. This was demonstrated on thin foils containing heavy elements and on powders of light elements dispersed on Cu-grids, i.e., the high-T C superconductor Bi 2 Sr 2 CaCu 2 O 8 and the mineral salt hydroxyapatite Ca 10 (PO 4 ) 6 OH 2 . (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

    KAUST Repository

    Cha, Judy J.

    2012-02-08

    Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

  12. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-02-12

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

  13. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-01-08

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

  14. Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

    Science.gov (United States)

    Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

    2018-02-01

    The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

  15. Study of the tellurite-rich composition range in the Bi2O3-TeO2 system

    International Nuclear Information System (INIS)

    Ghazaryan, A.A.

    2015-01-01

    The TeO 2 and Bi 2 O 3 based glasses and glass ceramics are widely used for various technical needs. However, information about the phase diagram of the Bi 2 O 3 -TeO 2 system is limited, and the existing data are inconsistent. According to Demina L.A. with co-authors the Bi 2 Te 4 O 1 1 compound has a congruent melting at 662°C and forms two eutectics with neighbors. In another case, according to the Schmidt P. with co-authors, it melts incongruently at 645°C without indication of Liquidus temperature. It was the motivation for the Bi 2 Te 4 O 1 1 melting behavior investigation and the binary Bi 2 O 3 -TeO 2 system phase diagram correction in the TeO 2 rich area of compositions. As initial materials the glass and solid state sintered samples were used for these purposes. The differential thermal and X-ray analyses were used for glassy and crystallized products identification. The exothermic effect with maximum at 420°C and two endothermal effects with minimum at 635°C and 720 Degree C are clearly observed on the DTA curve of the 80 TeO 2 -20 Bi 2 O 3 (mol.percent) glass composition corresponding to the Bi 2 Te 4 O 1 1 compound. The product of Bi 2 Te 4 O 1 1 glass powder crystallization at 420°C is the Bi 2 Te 4 O 1 1 compound with melting point of 635 ± 5°C. The second endothermic effect on the DTA curve in the range of temperature 680-765°C with minimum at 720°C, is associated with dissolution of TeO 2 in the melt, formed as result of the Bi 2 Te 4 O 1 1 incongruent melting. The existence of eutectic E 1 (87 mol.percent TeO 2 ) between Bi 2 Te 4 O 1 1 and TeO 2 with a melting point of 580 ±5°C has been confirmed. Incongruent melting promotes the peritectic P 1 (81 mol.percent TeO 2 ) formation between Bi 2 Te 4 O 1 1 and eutectic E 1 (87 mol.percent TeO 2 ) with a melting point of 635±5°C. Three endothermic effects at 560 °C, 635 °C and 720°C have been observed on the DTA curve of Bi 2 Te 4 O 1 1 compound, obtained by solid state synthesis. Last

  16. Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

    International Nuclear Information System (INIS)

    Fiedler, Sebastian; Seibel, Christoph; Lutz, Peter; Bentmann, Hendrik; Reinert, Friedrich; El-Kareh, Lydia; Bode, Matthias; Eremeev, Sergey V; Tereshchenko, Oleg E; Kokh, Konstantin A; Chulkov, Evgueni V; Kuznetsova, Tatyana V; Grebennikov, Vladimir I

    2014-01-01

    The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ∼100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability. (paper)

  17. Effect of surface treatment of thermoelectric materials on the properties of thermoelements made from solid solutions of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ and Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ systems

    Energy Technology Data Exchange (ETDEWEB)

    Alieva, T.D.; Abdinov, D.Sh.; Salaev, Eh.Yu.

    1981-10-01

    Effect of surface treatment technology of samples of solid solutions of Ei/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ and Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ systems on their thermoelectric efficiency is studied. Branches of thermoelements have been produced with the help of electroerosion or mechanical cutting of monocrystal ingots of semiconducting solid Bi/sub 2/Te/sub 3/-base solutions. It is shown that in case of the treatment of side surfaces of branches of thermoelements produced of monocrystals of Bi/sub 2/Te/sub 3/ base solid solutions their thermoelectrical efficiency grows considerably. Maximum growth of efficiency (approximately 20%) is observed during mechanical grinding of branches surfaces with diamond paste with the following chemical or electrochemical etching.

  18. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  19. On the study of the solid-solid phase transformation of TlBiTe2

    International Nuclear Information System (INIS)

    Chrissafis, K.; Vinga, E.S.; Paraskevopoulos, K.M.; Polychroniadis, E.K.

    2003-01-01

    The narrow gap semiconductor TlBiTe 2 undergoes a solid-solid phase transformation from the rhombohedral (D 3d ) to the cubic (O h ) phase. The present paper deals with the study of this phase transformation combining the results of Differential Scanning Calorimetry (DSC) and Transmission Electron Microscopy (TEM). It has been found that during heating the transformation is an athermal activated process, which can be described only by a combination of more than one processes while during cooling it exhibits an expectable thermal hysteresis due to the volume difference. The results of the kinetic analysis combined with the electron microscopy findings, supported also by the Fourier Transform Infrared (FTIR) spectroscopy ones, lead to the conclusion that TlBiTe 2 undergoes a multiple-step, displacive, martensitic type transformation. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  20. Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

    Science.gov (United States)

    Zhou, Yi; Li, Gongping

    2018-05-01

    Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

  1. In situ Raman spectroscopy of topological insulator BiTe films with varying thickness

    DEFF Research Database (Denmark)

    Wang, C.; Zhu, X.; Nilsson, Louis

    2013-01-01

    Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV...... effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs....

  2. Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

    Science.gov (United States)

    Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

    2018-03-01

    We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

  3. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  4. Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb2Te3/Bi2Te3 heterojunctions

    Science.gov (United States)

    Aramberri, H.; Muñoz, M. C.

    2017-05-01

    We investigate the effects of strain on the topological order of the Bi2Se3 family of topological insulators by ab initio first-principles methods. Strain can induce a topological phase transition and we present the phase diagram for the 3D topological insulators, Bi2Te3 , Sb2Te3 , Bi2Se3 , and Sb2Se3 , under combined uniaxial and biaxial strain. Their phase diagram is universal and shows metallic and insulating phases, both topologically trivial and nontrivial. In particular, uniaxial tension can drive the four compounds into a topologically trivial insulating phase. We propose a Sb2Te3/Bi2Te3 heterojunction in which a strain-induced topological interface state arises in the common gap of this normal insulator-topological insulator heterojunction. Unexpectedly, the interface state is confined in the topologically trivial subsystem and is physically protected from ambient impurities. It can be switched on or off by means of uniaxial strain and therefore Sb2Te3 /Bi2Te3 heterojunctions provide a topological system which hosts tunable robust helical interface states with promising spintronic applications.

  5. Separation of top and bottom surface conduction in Bi2Te3 thin films

    International Nuclear Information System (INIS)

    Yu Xinxin; He Liang; Lang Murong; Jiang Wanjun; Kou Xufeng; Tang Jianshi; Huang Guan; Wang, Kang L; Xiu Faxian; Liao Zhiming; Zou Jin; Wang Yong; Zhang Peng

    2013-01-01

    Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi 2 Te 3 thin films through gate dependent Shubnikov–de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi 2 Te 3 . In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces. (paper)

  6. Effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Hsing-Ting; Lin, Chih-Fan [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Yen, Yee-Wen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan (China); Chen, Chih-Ming, E-mail: chencm@nchu.edu.tw [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

    2016-05-25

    The Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample was current stressed with a density of 150 A/cm{sup 2} to investigate the effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi{sub 2}Te{sub 3} (50 °C) and cathodic p-Bi{sub 2}Te{sub 3}/Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi{sub 2}Te{sub 3}/Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10{sup −9} cm{sup 2} s{sup −1} at 120 °C. - Highlights: • Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample is current stressed with a density of 150 A/cm{sup 2}. • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

  7. Study of the circular photo-galvanic effect in electrically gated (Bi,Sb)2Te3 thin films

    Science.gov (United States)

    Pan, Yu; Pillsbury, Timothy; Richardella, Anthony; Flanagan, Thomas; Samarth, Nitin

    Illumination with circularly polarized light is known to produce a helicity dependent photocurrent in topological insulators such as Bi2Se3 [Nature Nanotech. 7, 96 (2012)]. Symmetry considerations suggest that this ``circular photo-galvanic effect'' (CPGE) arises purely from the surface. However, whether or not the CPGE is directly related to optical excitations from the helical surface states is still under debate. To clarify the origin of the CPGE, we first compare the helicity dependent photocurrent in intrinsic (Bi,Sb)2Te3 to Cr doped (Bi,Sb)2Te3 thin films in which the Dirac surface states are perturbed by magnetic coupling. Secondly, we discuss the tunable CPGE in electrically gated (Bi,Sb)2Te3 thin films excited by optical excitations at different wavelengths. The dependence on the chemical potential and the photon energy of the excitation unveils the origin of the CPGE. Funded by ONR.

  8. High Pressure X-Ray Diffraction Studies of Bi2-xSbxTe3 (x = 0,1,2)

    Science.gov (United States)

    Jacobsen, M. K.; Kumar, R. S.; Cornelius, A. L.; Sinogeiken, S. V.; Nico, M. F.

    2007-12-01

    Recently, pressure tuning of the thermoelectric figure of merit has been reported for several materials Bi2Te3 based thermoelectric materials [2],[10],[12]. In order to investigate the bulk properties of Bi2Te3, Sb2Te3, and their solid solution in detail, we have performed structural studies up to 20 GPa. Our diffraction results show that all three compounds transform from the ambient pressure structure to a high pressure phase between 7 and 10 GPa. In addition, these diffraction results have been converted to Vinet and Holzapfel equations of state to test the claim of electronic topological transitions in these structures [3].

  9. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  10. Structural and Galvanomagnetic properties in Mn-Bi2Te3 thin films

    Science.gov (United States)

    Bidinakis, K.; Speliotis, Th.

    2017-12-01

    Bismuth-based binary chalcogenide compounds such as Bi2Te3 and Bi2Se3 are well known materials for their excellent thermoelectric properties due to their near-gap electronic structure. In the last few years these materials have received attention for exhibiting new physics of 3D topological insulators (TI). Possible applications of TI based devices range from quantum computing, spin based logic and memory to electrodynamics. The 3D TIs present spin-momentum-locked surface states by time reversal symmetry (TRS). Introducing magnetic doping in a TI, brakes the TRS and is predicted to open the gap at Dirac point, resulting in exotic quantum phenomena. This interaction between magnetism and topologically protected states is of potential attention for applications in modern spintronics. Quantum phenomena such as weak antilocalization observed in these nanostructures are described. In this work, granular Mn-Bi2Te3 thin films were grown by DC magnetron sputtering on Si(111) substrates and were submitted to ex situ annealing. We present results for the crystal structure of sputtered and annealed films characterized with X-ray diffraction and high-resolution scanning electron microscopy (HRSEM). The surface analysis was studied with atomic force microscopy (AFM). Magnetotransport measurements were performed using standard four probe technique with Hall and MR configurations, with perpendicular magnetic fields up to 9T and temperatures from 300 to 3K.

  11. Evolution of thermoelectric performance for (Bi,Sb){sub 2}Te{sub 3} alloys from cutting waste powders to bulks with high figure of merit

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xi' an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Cai, Xin zhi, E-mail: xzcwust@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Han, Xue wu, E-mail: hanxuewu1990@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Zhang, Cheng cheng, E-mail: zcc516990418@live.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); and others

    2016-01-15

    Bi{sub 2}Te{sub 3} based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi{sub 2}Te{sub 3} based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb){sub 2}Te{sub 3} alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb){sub 2}Te{sub 3} alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi{sub 0.44}Sb{sub 1.56}Te{sub 3} was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi{sub 0.36}Sb{sub 1.64}Te{sub 3} and Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi{sub 2}Te{sub 3} based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi{sub 2}Te{sub 3} based wastes were directly selected as raw materials

  12. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    International Nuclear Information System (INIS)

    Fan, Xi'an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng

    2016-01-01

    Bi 2 Te 3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi 2 Te 3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb) 2 Te 3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb) 2 Te 3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi 0.44 Sb 1.56 Te 3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi 0.36 Sb 1.64 Te 3 and Bi 0.4 Sb 1.6 Te 3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi 2 Te 3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi 2 Te 3 based wastes were directly selected as raw materials for TE alloys. • Contaminants from cutting fluid and oxides could be effectively removed.

  13. Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

    Science.gov (United States)

    Fan, Xi‧an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng; Rong, Zhen zhou; Yang, Fan; Li, Guang qiang

    2016-01-01

    Bi2Te3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi2Te3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb)2Te3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb)2Te3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi0.44Sb1.56Te3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi0.36Sb1.64Te3 and Bi0.4Sb1.6Te3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi2Te3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers.

  14. High Curie temperature Bi(1.85)Mn(0.15)Te3 nanoplates.

    Science.gov (United States)

    Cheng, Lina; Chen, Zhi-Gang; Ma, Song; Zhang, Zhi-dong; Wang, Yong; Xu, Hong-Yi; Yang, Lei; Han, Guang; Jack, Kevin; Lu, Gaoqing Max; Zou, Jin

    2012-11-21

    Bi(1.85)Mn(0.15)Te(3) hexagonal nanoplates with a width of ~200 nm and a thickness of ~20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Mn(2+) and Mn(3+) ions were found to substitute Bi(3+) ions in the lattice. High-level Mn doping induces significant lattice distortion and decreases the crystal lattice by 1.07% in the a axis and 3.18% in the c axis. A high ferromagnetic state with a Curie temperature of ~45 K is observed in these nanoplates due to Mn(2+) and Mn(3+) ion doping, which is a significant progress in the field of electronics and spintronics.

  15. Space charge limited current conduction in Bi2Te3 thin films

    International Nuclear Information System (INIS)

    Sathyamoorthy, R.; Dheepa, J.; Velumani, S.

    2007-01-01

    Bi 2 Te 3 is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi 2 Te 3 thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10 -5 m bar on clean glass substrates at room temperature. An Al-Bi 2 Te 3 -Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V t ), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V t on t 2 and log J on log t. The hole concentration in the films were found to be n 0 = 1.65 * 10 10 m -3 . The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V t is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV

  16. Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity

    International Nuclear Information System (INIS)

    Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan

    2016-01-01

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4  S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  17. Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

    Directory of Open Access Journals (Sweden)

    Feng Hao

    2017-03-01

    Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

  18. The microstructure network and thermoelectric properties of bulk (Bi,Sb)2Te3

    DEFF Research Database (Denmark)

    Xie, Wenjie; Hitchcock, Dale A.; Kang, Hye J.

    2012-01-01

    We report small-angle neutron scattering studies on the microstructure network in bulk (Bi,Sb)(2)Te-3 synthesized by the melt-spinning (MS) and the spark-plasma-sintering (SPS) process. We find that rough interfaces of multiscale microstructures generated by the MS are responsible for the large...... reduction of both lattice thermal conductivity and electrical conductivity. Our study also finds that subsequent SPS forms a microstructure network of similar to 10 nm thick lamellae and smooth interfaces between them. This nanoscale microstructure network with smooth interfaces increases electrical...... conductivity while keeping a low thermal conductivity, making it an ideal microstructure for high thermoelectric efficiency....

  19. Orientation distribution in Bi2Te3-based compound prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Kim, K.T.; Kim, Y.H.; Lim, C.H.; Cho, D.C.; Lee, Y.S.; Lee, C.H.

    2005-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders(P L ) and small powders(P S ). We could obtained the highest figure of merit(Z C ) of 2.89 x 10 -3 /K in sintered compound mixed to P L :P S =80:20. This resulted from the increase of orientation by large powders(P S ) and the reduce of pores by small powders. The figure of merit(Z C ) of the sintered compound using only small powders(P S ) showed lower value of 2.67 x 10 -3 /K compared with that of sintered compound mixed to P L :P S =80:20 due to the increase of electrical resistivity. (orig.)

  20. From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

    International Nuclear Information System (INIS)

    Peranio, N.; Eibl, O.; Baessler, S.; Nielsch, K.; Klobes, B.; Hermann, R.P.; Daniel, M.; Albrecht, M.; Goerlitz, H.; Pacheco, V.; Bedoya-Martinez, N.; Hashibon, A.; Elsaesser, C.

    2016-01-01

    Bi 2 Te 3 and CoSb 3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi 15 Sb 29 Te 56 , and n-type Bi 38 Te 55 Se 7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential-pulsed electrochemical deposition in a nanostructured Al 2 O 3 matrix. p-type Sb 2 Te 3 , n-type Bi 2 Te 3 , and n-type CoSb 3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb 3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi 2 (Te 0.91 Se 0.09 ) 3 /SiC and (Bi 0.26 Sb 0.74 ) 2 Te 3 /SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Moessbauer spectroscopy, and transmission electron microscopy. For Bi 2 Te 3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi 2 Te 3 and CoSb 3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT-limiting mechanisms in these materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Synthesis, crystal structure, and properties of Bi{sub 3}TeBO{sub 9} or Bi{sub 3}(TeO{sub 6})(BO{sub 3}): a non-centrosymmetric borate-tellurate(VI) of bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Daub, Michael; Krummer, Michael; Hoffmann, Anke [Institut fuer Anorganische und Analytische Chemie, Albert-Ludwigs-Universitaet, Albertstrasse 21, 79104, Freiburg (Germany); Bayarjargal, Lkhamsuren [Institut fuer Geowissenschaften, Abt. Kristallographie, Goethe-Universitaet, Altenhoeferallee 1, 60438, Frankfurt am Main (Germany); Hillebrecht, Harald [Institut fuer Anorganische und Analytische Chemie, Albert-Ludwigs-Universitaet, Albertstrasse 21, 79104, Freiburg (Germany); Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet, Stefan-Meier-Strasse 25, 79104, Freiburg (Germany)

    2017-01-26

    Pale-yellow single crystals of the new borate tellurate(VI) Bi{sub 3}TeBO{sub 9} were obtained by reaction of stoichiometric amounts of Bi{sub 2}O{sub 3}, B{sub 2}O{sub 3}, and Te(OH){sub 6} at 780 C. The non-centrosymmetric crystal structure (P6{sub 3}, Z=2, a=8.7454(16), c=5.8911(11) Aa, 738 refl., 43 param, R1=0.037, wR2=0.093) contains isolated trigonal-planar BO{sub 3} units and nearly undistorted TeO{sub 6} octahedra. The Bi{sup 3+} cations are located in between in octahedral voids. The BiO{sub 6} octahedra are significantly distorted to a [3+3] pattern (2.25/2.50 Aa) due to the ns{sup 2} configuration. According to the structural features, the formula can be written as Bi{sub 3}(TeO{sub 6})(BO{sub 3}). Alternatively, the structure can also be described as hcp of oxygen with Te{sup VI} and Bi{sup III} in octahedral voids and B{sup III} in trigonal- planar voids. The vibrational spectra show the typical features of BO{sub 3} and TeO{sub 6} units with a significant {sup 10}B/{sup 11}B isotopic splitting of the IR-active B-O valence mode (1248 and 1282 cm{sup -1}). The UV/Vis spectrum shows an optical band edge with an onset around 480 nm (2.6 eV). MAS-NMR spectra of {sup 11}B show an anisotropic signal with a quadrupole coupling constant of C{sub Q}=2.55 MHz. and a very small deviation from rotational symmetry (η=0.2). The isotropic chemical shift is 20.1 ppm. The second harmonic generation (SHG) test was positive with an activity comparable to potassium dihydrogen phosphate (KDP). Bi{sub 3}TeBO{sub 9} decomposes in air at 825 C to Bi{sub 2}TeO{sub 5}. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Interesting pressure dependence of power factor in BiTeI

    International Nuclear Information System (INIS)

    Guo, San-Dong; Wang, Jian-Li

    2016-01-01

    We investigate pressure dependence of electronic structures and thermoelectric properties in BiTeI by using a modified Becke and Johnson exchange potential. Spin–orbit coupling (SOC) effects are also included due to giant Rashba splitting. Thermoelectric properties are illuminated through solving Boltzmann transport equations within the constant scattering time approximation. The calculated energy band gap of 0.36 eV agrees well with the experimental value of 0.38 eV. As the pressure increases, the energy band gap first decreases, and then increases. The Rashba energy has the opposite trend with the energy band gap. SOC has obvious detrimental influence on the power factor in both n-type and p-type doping. For low doping concentration, the power factor has the same trend with the energy band gap with increasing pressure, but shows a monotonic changing trend in high doping. It is found that the pressure can induce a significantly enhanced power factor in high n-type doping, which can be understood as pressure leading to two-dimensional-like density of states in the conduction bands. These results suggest that BiTeI may be a potential candidate for efficient thermoelectricity in n-type doping by pressure, turning an ordinary insulator into a topological insulator. (paper)

  3. Density functional study of BiSbTeSe{sub 2} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2017-08-15

    In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Structural, chemical, and thermoelectric properties of Bi2Te3 Peltier materials. Bulk, thin films, and superlattices

    International Nuclear Information System (INIS)

    Peranio, Nicola

    2008-01-01

    In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi 2 Te 3 and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi 2 (Te 0.91 Se 0.09 ) 3 and p-type (Bi 0.26 Sb 0.74 ) 1.98 (Te 0.99 Se 0.01 ) 3.02 bulk materials synthesised by the Bridgman technique. (II) Bi 2 Te 3 thin films and Bi 2 Te 3 /Bi 2 (Te 0.88 Se 0.12 ) 3 superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF 2 substrates with periods of δ-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to and an amplitude of about 10 pm and (ii) a wave vector parallel to {1,0,10} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

  5. Observation of hidden atomic order at the interface between Fe and topological insulator Bi_{2}Te_{3}

    OpenAIRE

    Sanchez-Barriga, Jaime; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Volykhov, Andrey A.; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I.; Koch, Roland J.; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V.

    2017-01-01

    Abstract: To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface diso...

  6. Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

    2016-07-01

    Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

  7. Investigation of the electronic and magnetic structure of thin layer FeTe on Bi{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Cornils, Lasse; Manna, Sujit; Kamlapure, Anand; Haenke, Torben; Wiebe, Jens; Wiesendanger, Roland [Department of Physics, University of Hamburg, Hamburg (Germany); Hu, Jin; Mao, Zhiqiang [Department of Physics, Tulane University, New Orleans (United States); Brummerstedt Iversen, Bo; Hofmann, Philip [Interdisciplinary Nanoscience Center iNANO, Aarhus University (Denmark)

    2016-07-01

    The surprising discovery of Fe based superconductors in 2008 lead to a big effort in finding new materials with very high critical temperatures. One good example are Fe-chalcogenides. Although the parent compound FeTe is not superconducting, the situation changes drastically on interfacing the material with other substrates. Recently He and coworkers found zero resistance at the interface of Bi{sub 2}Te{sub 3} films grown on bulk FeTe, which showed a transition temperature of 12 K. In this talk we present our latest results on our investigation of the electronic and magnetic nature of epitaxially grown FeTe thin films on the topological insulator Bi{sub 2}Te{sub 3} using spin-polarized scanning tunneling microscopy and spectroscopy. Up to several monolayers of FeTe, an antiferromagnetic structure similar to the one observed on its bulk compound FeTe was clearly visible. Surprisingly we found a gap around the Fermi level indicating proximity to superconductivity in coexistence with magnetism on the nanoscale.

  8. Thermoelectric properties of Bi2SexTe3-x prepared by Bridgman method

    International Nuclear Information System (INIS)

    Keawprak, N.; Lao-ubol, S.; Eamchotchawalit, C.; Sun, Z.M.

    2011-01-01

    Highlights: → Bi 2 Se x Te 3-x with various Se concentrations grown by Bridgman method was prepared. → The electrical conductivity was found to decrease with increasing Se content. → The Seebeck coefficient was not influenced by the substitution of Te with Se. → The electronic thermal conductivity exhibited a decrease with increasing Se. → The highest of dimensionless figure of merit (ZT) was measure to be 1.2. - Abstract: Bi 2 Se x Te 3-x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 x 10 5 S m -1 at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h -1 . The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K -1 at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m -1 K -1 at x = 0.36. The electronic part of κ, κ el , showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.

  9. Investigation of the Microstructural and Thermoelectric Properties of the (GeTe0.95(Bi2Te30.05 Composition for Thermoelectric Power Generation Applications

    Directory of Open Access Journals (Sweden)

    Lior Weintraub

    2014-01-01

    Full Text Available In the frame of the current research, the p-type Bi2Te3 doped (GeTe0.95(Bi2Te30.05 alloy composed of hot pressed consolidated submicron structured powder was investigated. The influence of the process parameters (i.e., powder particles size and hot pressing conditions on both reduction of the lattice thermal conductivity and electronic optimization is described in detail. Very high maximal ZT values of up to ∼1.6 were obtained and correlated to the microstructural characteristics. Based on the various involved mechanisms, a potential route for further enhancement of the ZT values of the investigated composition is proposed.

  10. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  11. The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

    Directory of Open Access Journals (Sweden)

    Alieva A. P.

    2012-06-01

    Full Text Available Nanowires formation process on a (0001 surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1—Te(1 there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.

  12. Hot pressing effect on (Bi 0.25 Sb 0.75 ) 2 Te 3 mechanical and ...

    Indian Academy of Sciences (India)

    Hot pressing effect on (Bi0.25Sb0.75)2Te3 mechanical and thermoelectric properties ... The crystal of this compound was prepared, pulverized in a particle size ratio of 64% ... microscopy and, for only once successful attempt, atomic force microscopy. The acquired images ensured to show homogeneous structures for hot ...

  13. Hot pressing effect on (Bi0⋅25Sb0⋅75)2Te3 mechanical and ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. (Bi0⋅25Sb0⋅75)2Te3 thermoelectric material is a well known p type of compound that has higher fig- ... The crystal of this compound was prepared, pulverized in a particle .... ing fracture surfaces of the materials as shown in figures.

  14. To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

    Science.gov (United States)

    Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

    2018-05-01

    The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

  15. Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : Ab initio study

    NARCIS (Netherlands)

    Govaerts, K.; Sluiter, M.H.F.; Partoens, B.; Lamoen, D.

    2014-01-01

    In order to account explicitly for the existence of long-periodic layered structures and the strong structural relaxations in the most common binary and ternary alloys of the Bi-Sb-Te-Se system, we have developed a one-dimensional cluster expansion (CE) based on first-principles electronic structure

  16. The microstructure and coefficient transmission of think films Bi2Te3-xSex, alloyed by terbium

    International Nuclear Information System (INIS)

    Abdullaev, N.M.; Mekhtieva, S.I.; Jalilov, N.Z.; Memmedov, N.R.; Zeynalov, V.Z.

    2007-01-01

    The defects of films microstructures of the thermoelectric materials n- and p-type Bi 2 Te 3 -xSe x , alloyed by Tb and Cl, with think, obtained by thermic evaporation in vacuum have been investigated by microscopic methods

  17. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

    2010-01-01

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  18. Influence of Bi, Se and Te additions on the formation temperature of MgB2

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Andersen, Niels Hessel; Pallewatta, P. G. Asanka Pramod

    2012-01-01

    The formation of the MgB2 superconducting compound from a mixture of Mg and amorphous B powders with various low melting point metals (Bi, Se and Te) was studied in situ by means of high-energy (synchrotron) x-ray diffraction in wires with a composite Cu/Nb sheath. In comparison with an undoped s...

  19. Biomolecule-Assisted Hydrothermal Synthesis and Self-Assembly of Bi2Te3 Nanostring-Cluster Hierarchical Structure

    DEFF Research Database (Denmark)

    Mi, Jianli; Lock, Nina; Sun, Ting

    2010-01-01

    A simple biomolecule-assisted hydrothermal approach has been developed for the fabrication of Bi2Te3 thermoelectric nanomaterials. The product has a nanostring-cluster hierarchical structure which is composed of ordered and aligned platelet-like crystals. The platelets are100 nm in diameter...

  20. Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

    KAUST Repository

    Gupta, Rahul P.

    2010-04-27

    A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

  1. Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

    International Nuclear Information System (INIS)

    Moreschini, L.; Autès, G.; Crepaldi, A.; Moser, S.; Johannsen, J.C.; Kim, K.S.; Berger, H.; Bugnon, Ph.; Magrez, A.; Denlinger, J.; Rotenberg, E.; Bostwick, A.; Yazyev, O.V.

    2015-01-01

    Highlights: • We provide an ARPES comparison between the three tellurohalides BiTeX (X = I, Br, Cl). • They present a similar band structure with namely spin-split bulk and surface states. • They offer, except for BiTeCl, the possibility of ambipolar conduction. • They can be easily doped. • From the data appeared so far, BiTeBr may be the most appealing for applications. - Abstract: We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work

  2. Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)

    International Nuclear Information System (INIS)

    Guha Thakurta, S.R.; Dutta, A.K.

    1977-01-01

    Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)

  3. Photovoltaic effect in Bi{sub 2}TeO{sub 5} photorefractive crystal

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Ivan de, E-mail: ivan@ft.unicamp.brg; Capovilla, Danilo Augusto [GOMNI-Faculdade de Tecnologia/UNICAMP, Limeira (Brazil); Carvalho, Jesiel F.; Montenegro, Renata; Fabris, Zanine V. [Instituto de Física/Universidade Federal de Goiás, Goiânia (Brazil); Frejlich, Jaime [Instituto de Física “Gleb Wataghin”/UNICAMP, Campinas (Brazil)

    2015-10-12

    We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi{sub 2}TeO{sub 5} crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material.

  4. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  5. Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires.

    Science.gov (United States)

    Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

    2016-01-11

    Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.

  6. Systematic study of transport via surface and bulk states in Bi2Te3 topological insulator

    Science.gov (United States)

    de Castro, S.; Peres, M. L.; Chitta, V. A.; Gratens, X.; Soares, D. A. W.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.; Oliveira, N. F., Jr.

    2016-07-01

    We performed magnetoresistance measurements on Bi2Te3 thin film in the temperature range of T = 1.2-4.0 K and for magnetic fields up to 2 T. The curves exhibited anomalous behavior for temperatures below 4.0 K. Different temperature intervals revealed electrical transport through different conductive channels with clear signatures of weak antilocalization. The magnetoresistance curves were explained using the Hikami-Larkin-Nagaoka model and the 2D Dirac modified model. The comparison between the parameters obtained from the two models revealed the transport via topological surface states and bulk states. In addition, a superconductive like transition is observed for the lowest temperatures and we suggest that this effect can be originated from the misfit dislocations caused by strain, giving rise to a superconductive channel between the interface of the film and the substrate.

  7. Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film

    International Nuclear Information System (INIS)

    Yildiz, Koksal; Akgul, Unal; Atici, Yusuf; Leipner, Hartmut S.

    2014-01-01

    The film of thermoelectric ternary p-type (Bi 0.15 Sb 0.85 ) 2 Te 3 was deposited on polyimide foil substrate at 168 C using direct-current magnetron sputtering. Microstructural investigations of the film were performed by electron microscopy techniques. SEM observations showed that the film surface consisted of large-sized particulates with small-sized particles and also mound-like crystal agglomerates in some areas. Chemical composition of the film was analyzed using energy-dispersive X-ray spectrometer (EDS). It has been observed that the EDS results were in an agreement with nominal composition for the film. Detailed microstructural investigations were carried out using transmission electron microscopy (TEM). TEM images and selected area electron diffraction patterns showed that the film has randomly oriented polycrystalline grain structure. High-resolution TEM images indicated that the microstructure of film also contained nano-crystal structure, smaller than 10 nm. (orig.)

  8. Thermal Stress Analysis and Structure Parameter Selection for a Bi2Te3-Based Thermoelectric Module

    Science.gov (United States)

    Gao, Jun-Ling; Du, Qun-Gui; Zhang, Xiao-Dan; Jiang, Xin-Qiang

    2011-05-01

    The output power and conversion efficiency of thermoelectric modules (TEMs) are mainly determined by their material properties, i.e., Seebeck coefficient, electrical resistivity, and thermal conductivity. In practical applications, due to the influence of the harsh environment, the mechanical properties of TEMs should also be considered. Using the finite-element analysis (FEA) model in ANSYS software, we present the thermal stress distribution of a TEM based on the anisotropic mechanical properties and thermoelectric properties of hot-pressed materials. By analyzing the possibilities of damage along the cleavage plane of Bi2Te3-based thermoelectric materials and by optimizing the structure parameters, a TEM with better mechanical performance is obtained. Thus, a direction for improving the thermal stress resistance of TEMs is presented.

  9. Photovoltaic effect in Bi2TeO5 photorefractive crystal

    International Nuclear Information System (INIS)

    Oliveira, Ivan de; Capovilla, Danilo Augusto; Carvalho, Jesiel F.; Montenegro, Renata; Fabris, Zanine V.; Frejlich, Jaime

    2015-01-01

    We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi 2 TeO 5 crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material

  10. Irradiation-induced doping of Bismuth Telluride Bi2Te3

    International Nuclear Information System (INIS)

    Rischau, Carl Willem

    2014-01-01

    Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

  11. Microscopic effects of Dy doping in the topological insulator Bi2Te3

    Science.gov (United States)

    Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

    2018-05-01

    Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

  12. A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

    International Nuclear Information System (INIS)

    Chen, W C; Wu, Y C; Hwang, W S; Hsieh, H L; Huang, J Y; Huang, T K

    2015-01-01

    In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi 2 Te 3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi 2 Te 3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi 2 Te 3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi 2 Te 3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi 2 Te 3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm. (paper)

  13. A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

    Science.gov (United States)

    Chen, W. C.; Wu, Y. C.; Hwang, W. S.; Hsieh, H. L.; Huang, J. Y.; Huang, T. K.

    2015-06-01

    In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi2Te3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi2Te3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi2Te3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi2Te3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi2Te3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm.

  14. Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering

    Directory of Open Access Journals (Sweden)

    Yun Zheng

    2017-06-01

    Full Text Available P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and extend the life cycle. In this study, p-type Bi0.5Sb1.5Te3 commercial zone-melting (ZM ingots were processed by melt spinning and subsequent plasma-activated sintering (MS-PAS, and were then subjected to vacuum-annealing at 473 and 573 K, respectively, for one week. The results show that MS-PAS samples exhibit excellent thermal stability when annealed at 473 K. However, thermal annealing at 573 K for MS-PAS specimens leads to the distinct sublimation of the element Te, which degrades the hole concentration remarkably and results in inferior thermoelectric performance. Furthermore, MS-PAS samples annealed at 473 K demonstrate a slight enhancement in flexural and compressive strengths, probably due to the reduction of residual stress induced during the sintering process. The current work guides the reliable application of p-type Bi0.5Sb1.5Te3 compounds prepared by the MS-PAS technique.

  15. The influence of nanoscale heterostructures on the thermoelectric properties of bi-substituted Tl{sub 5}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Heinke, Frank; Schlegel, Robert; Schwarzmueller, Stefan; Oeckler, Oliver [Institute for Mineralogy, Crystallography, and Materials Science, Faculty of Chemistry and Mineralogy, Leipzig University (Germany); Eisenburger, Lucien [University of Munich (LMU), Department Chemie (Germany)

    2017-03-16

    Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} crystallizes in a distorted variant of the Tl{sub 5}Te{sub 3} structure type in the space group I4/m. The symmetry reduction compared to Tl{sub 5}Te{sub 3} (space group I4/mcm) is a consequence of cation ordering as shown by resonant X-ray scattering using synchrotron radiation. Tl and Bi predominantly occupy one Wyckoff site each. This ordering is accompanied by displacements of Te atoms. The influence of nanostructuring on the thermoelectric performance of Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} was investigated for the new composite model system Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} - TlInTe{sub 2}. For the nominal composition (Tl{sub 4.5}Bi{sub 0.5}Te{sub 3}){sub 0.6}(TlInTe{sub 2}){sub 0.4}, the thermoelectric Figure of merit ZT reaches 0.8 at 325 C. Nanoscaled precipitates with sizes of about 100-200 nm probably have beneficial influence on the thermal conductivity at this temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

    Science.gov (United States)

    Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

    2018-01-01

    This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

  17. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  18. Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

    International Nuclear Information System (INIS)

    Li Feihui; Huang Qinghua; Wang Wei

    2009-01-01

    The electrochemical reduction process of Bi 3+ , HTeO 2 + , Sb III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi 3+ , HTeO 2 + and Sb III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te 0 is formed firstly on the electrode surface through the electrochemical reduction of HTeO 2 + ; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi 3+ with Te 0 to form Bi 2 Te 3 takes place; when the cathodic polarizing potential is negative enough, Bi 3+ and Sb III react with Te 0 to form Bi 0.5 Sb 1.5 Te 3 . The results indicate that Bi 0.5 Sb 1.5 Te 3 films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.

  19. Mechanical properties of bismuth telluride (Bi{sub 2}Te{sub 3}) processed by high pressure torsion (HPT); Propiedades mecanicas del telururo de bismuto (Bi{sub 2}Te{sub 3}) procesado mediante torsion bajo alta presion (HPT)

    Energy Technology Data Exchange (ETDEWEB)

    Santamaria, J. A.; Alkorta, J.; Gil Sevillano, J.

    2013-06-01

    Bismuth telluride, Bi{sub 2}Te{sub 3}, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi{sub 2}Te{sub 3} is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric figure of merit results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa) using high pressure torsion (HPT, one turn at room temperature). Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation. (Author) 11 refs.

  20. Electronic tuning of the transport properties of off-stoichiometric PbxSn1−xTe thermoelectric alloys by Bi2Te3 doping

    International Nuclear Information System (INIS)

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-01-01

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb x Sn 1−x Te alloys by tuning of Bi 2 Te 3 doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb 0.5 Sn 0.5 Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected

  1. A Micro-Raman Study of Exfoliated Few-Layered n-Type Bi2Te2.7Se0.3 (Postprint)

    Science.gov (United States)

    2017-11-28

    is feasible because the Bi-Te1 bond strength is the strongest bond in the quintuple20. In addition, the Te2 atom is known to lie at the inversion ...ii) mitigation of the bipolar effect in thermopower, and iii) a simultaneous reduction in the thermal conductivity, that led to the broadening of the...or Se-dopant at the Te sites (Te1 and Te2), where Te2 is the inversion center of the crystal symmetry (see Supplementary Fig. S1)33. As Se is

  2. Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

    Directory of Open Access Journals (Sweden)

    Hyeona Mun

    2015-03-01

    Full Text Available The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb and dopants (Fe. An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

  3. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting

    Energy Technology Data Exchange (ETDEWEB)

    Demko, L.; Tokura, Y. [Multiferroics Project, ERATO, JST, c/o Department of Applied Physics, University of Tokyo (Japan); Schober, G.A.H. [Institute for Theoretical Physics, University of Heidelberg (Germany); Kocsis, V.; Kezsmarki, I. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences (Hungary); Bahramy, M.S.; Murakawa, H. [CMRG and CERG, RIKEN ASI (Japan); Lee, J.S.; Arita, R.; Nagaosa, N. [Department of Applied Physics, University of Tokyo (Japan)

    2013-07-01

    We study the magneto-optical (MO) response of the polar semiconducting BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  4. High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target

    International Nuclear Information System (INIS)

    Walachova, J.; Zeipl, R.; Zelinka, J.; Malina, V.; Pavelka, M.; Jelinek, M.; Studnicka, V.; Lost'ak, P.

    2005-01-01

    The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric layers are prepared at different conditions by laser ablation from Bi 2 Te 3 target. The best measured figure of merit ZT is for our devices ZT=2.65. This result is comparable with the results obtained on superlattices. ZT oscillated with the thickness of the layers. On some devices the Seebeck coefficient is measured and using conductivity measurements along the thermoelectric layers the thermal conductivity is estimated from ZT. The low thermal conductivity of samples is explained by the quantum size effect and by existence of few phases of type Bi 2(m+n) Te 3n in the thermoelectric layers

  5. Magneto-transport studies on Bi2Te2+xSe1–x (x = 0.05 and 0.10 topological insulators

    Directory of Open Access Journals (Sweden)

    Bushra Irfan

    2016-09-01

    Full Text Available Bi2Te2Se is one of the most promising three dimensional topological insulators, for the study of surface states. In this work, we report the results of transport and magneto-transport behavior of Bi2Te2+xSe1–x (x=0.05 and 0.10 single crystals grown using modified Bridgeman technique. Resistance versus temperature measurements show semiconducting behavior for x = 0.05 and 0.10 crystals. Linear magnetoresistance is observed for Bi2Te2.05Se0.95 (i.e. x=0.05 whereas, Bi2Te2.10Se0.90 (x=0.10 single crystal shows a conductance fluctuations at low magnetic field.

  6. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Yeom, Jong-taek [Light Metal Division, Korea Institute of Materials Science (KIMS), Changwon 642-831 (Korea, Republic of); Kim, Jae-il [Materials Science and Engineering, University of Dong-A, Hadan-dong, Saha-gu, Busan 604-714 (Korea, Republic of); Nam, Tae-hyun, E-mail: tahynam@gnu.ac.kr [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2013-12-15

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (

  7. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    International Nuclear Information System (INIS)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun; Yeom, Jong-taek; Kim, Jae-il; Nam, Tae-hyun

    2013-01-01

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (< Hv 200) of the alloys displaying the B2-B19′ transformation. Solid solution hardening was an important factor for inducing the B2-R transformation in Ti–Ni–X (X = non-transition elements) alloys

  8. Synthesis of diluted magnetic semiconductor Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals in a host glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Silva, R.S. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Mikhail, H.D., E-mail: ricardosilva@fisica.uftm.edu.br [Instituto de Ciências Tecnológicas e Exatas (ICTE), Departamento de Engenharia Mecânica, Universidade Federal do Triângulo Mineiro, 38064-200 Uberaba, Minas Gerais (Brazil); Pavani, R. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Cano, N.F. [Departamento de Ciências do Mar, Universidade Federal de São Paulo, 11030-400 Santos, São Paulo (Brazil); Silva, A.C.A.; Dantas, N.O. [Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Universidade Federal de Uberlândia, 38400-902 Uberlândia, Minas Gerais (Brazil)

    2015-11-05

    Diluted magnetic semiconductors of manganese doped in bismuth-telluride nanocrystals (Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs) were grown in a glass matrix and investigated by Transmission Electron Microscopy, X-Ray Diffraction, Atomic Force Microscopy/Magnetic Force Microscopy, and Electron Paramagnetic Resonance. TEM images showed that the nanocrystals formed within the glass matrix were nearly spherical, with average sizes between 4 and 5 nm, and d{sub 015}-spacing of approximately 0.322 nm, which corresponds to the (015) interplanar distance in Bi{sub 2}Te{sub 3} bulk. The diffraction patterns showed that the diffraction peak associated with the (015) plane of the Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals shifts to larger diffraction angles as manganese (Mn) concentration increases, suggesting that the Mn{sup 2+} ions are substitutional defects occupying Bi sites (Mn{sub Bi}). AFM and MFM measurements showed magnetic phase contrast patterns, providing further evidence of Mn{sup 2+} ion incorporation in the nanocrystal structure. EPR signal of manganese ion incorporation and valence states in the crystalline structure of the Bi{sub 2}Te{sub 3} nanocrystals confirmed the presence of the Mn{sup 2+} state. - Highlights: • Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs were synthesized in a glass matrix by fusion method. • Transmission Electronic Microscopy shows the formation of Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs. • The sp-d exchange interaction in DMS NCs can be evidenced by X Ray-Diffraction and Magnetic Force Microscopy. • Electron Paramagnetic Resonance spectra confirmed that Mn{sup 2+} ions are located in two distinct Bi{sub 2}Te{sub 3} NCs sites.

  9. Quasiparticle Scattering in the Rashba Semiconductor BiTeBr: The Roles of Spin and Defect Lattice Site.

    Science.gov (United States)

    Butler, Christopher John; Yang, Po-Ya; Sankar, Raman; Lien, Yen-Neng; Lu, Chun-I; Chang, Luo-Yueh; Chen, Chia-Hao; Wei, Ching-Ming; Chou, Fang-Cheng; Lin, Minn-Tsong

    2016-09-28

    Observations of quasiparticle interference have been used in recent years to examine exotic carrier behavior at the surfaces of emergent materials, connecting carrier dispersion and scattering dynamics to real-space features with atomic resolution. We observe quasiparticle interference in the strongly Rashba split 2DEG-like surface band found at the tellurium termination of BiTeBr and examine two mechanisms governing quasiparticle scattering: We confirm the suppression of spin-flip scattering by comparing measured quasiparticle interference with a spin-dependent elastic scattering model applied to the calculated spectral function. We also use atomically resolved STM maps to identify point defect lattice sites and spectro-microscopy imaging to discern their varying scattering strengths, which we understand in terms of the calculated orbital characteristics of the surface band. Defects on the Bi sublattice cause the strongest scattering of the predominantly Bi 6p derived surface band, with other defects causing nearly no scattering near the conduction band minimum.

  10. Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

    Science.gov (United States)

    Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

    2015-06-01

    N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

  11. Magnetic ordering in Ho-doped Bi{sub 2}Te{sub 3} topological insulator

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, A.I.; Van der Laan, G.; Hesjedal, T. [Magnetic Spectroscopy Group, Diamond Light Source, Didcot (United Kingdom); Harrison, S.E. [Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, CA (United States); Collins-McIntyre, L.J. [Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2016-06-15

    We investigate the magnetic properties of Ho-doped Bi{sub 2}Te{sub 3} thin films grown by molecular beam epitaxy. Analysis of the polarized X-ray absorption spectra at the Ho M{sub 5} absorption edge gives an effective 4f magnetic moment which is ∝45% of the Hund's rule ground state value. X-ray magnetic circular dichroism (XMCD) shows no significant anisotropy, which suggests that the reduced spin moment is not due to the crystal field effects, but rather the presence of non-magnetic or antiferromagnetic Ho sites. Extrapolating the temperature dependence of the XMCD measured in total electron yield and fluorescence yield mode in a field of 7 T gives a Curie-Weiss temperature of and vartheta;{sub CW} ∼ -30 K, which suggests antiferromagnetic ordering, in contrast to the paramagnetic behavior observed with SQUID magnetometry. From the anomaly of the XMCD signal at low temperatures, a Neel temperature T{sub N} between 10 K and 25 K is estimated. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Electrical Detection of Spin-to-Charge Conversion in a Topological Insulator Bi2Te3

    Science.gov (United States)

    Li, Connie H.; van't Erve, Olaf M. J.; Li, Yaoyi; Li, Lian; Jonker, Berry T.

    Spin-momentum locking in topological insulators (TIs) dictates that an unpolarized charge current creates a net spin polarization. We recently demonstrated the first electrical detection of this spontaneous polarization in a transport geometry, using a ferromagnetic (FM) / tunnel barrier contact, where the projection of the TI surface state spin on the magnetization of detector is measured as a voltage [1]. Alternatively, if spins are injected into the TI surface state system, it is distinctively associated with a unique carrier momentum, and hence should generated a charge accumulation, similar to that of inverse spin Hall effect. Here we experimentally demonstrate both effects in the same device fabricated in Bi2Te3: the electrical detection of the spin accumulation generated by an unpolarized current flowing through the surface states, and that of the charge accumulation generated by spins injected into the surface states system. This reverse measurement is an independent confirmation of spin-momentum locking in the TI surface states, and offers additional avenue for spin manipulation. It further demonstrates the robustness and versatility of electrical access to the TI surface state spin system, an important step towards its utilization in TI-based spintronics devices. C.H. Li et al., Nat. Nanotech. 9, 218 (2014). Supported by NRL core funds and Nanoscience Institute.

  13. Thickness dependent quantum oscillations of transport properties in topological insulator Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N. [National Technical University “Kharkov Polytechnic Institute,” 21 Frunze St., Kharkov 61002 (Ukraine); Dresselhaus, M. S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-02-02

    The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18−600 nm) of p-type topological insulator Bi{sub 2}Te{sub 3} thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18–100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi{sub 2}Te{sub 3} quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi{sub 2}Te{sub 3} and are inherent to topological insulators.

  14. Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

    Science.gov (United States)

    Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

    2017-08-02

    The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

  15. Constructing nanoporous carbon nanotubes/Bi2Te3 composite for synchronous regulation of the electrical and thermal performances

    Science.gov (United States)

    Zhang, Qihao; Xu, Leilei; Zhou, Zhenxing; Wang, Lianjun; Jiang, Wan; Chen, Lidong

    2017-02-01

    Porous nanograined thermoelectric materials exhibit low thermal conductivity due to scattering of phonons by pores, which are favorable for thermoelectric applications. However, the benefit is not large enough to overcome the deficiency in the electrical performance. Herein, an approach is presented to reduce the thermal conductivity and synchronously enhance the electrical conductivity through constructing a nanoporous thermoelectric composite. Carbon nanotubes (CNTs) are truncated and homogeneously dispersed within the Bi2Te3 matrix by a cryogenic grinding (CG) technique for the first time, which efficiently suppress the Bi2Te3 grain growth and create nanopores with the size ranging from dozens to hundreds of nanometers. The lattice thermal conductivity is substantially decreased by broad wavelength phonon scattering resulting from nanopores, increased grain boundaries, and newly formed interfaces. Meanwhile, the electrical conductivity is improved due to the enhanced carrier mobility, which may originate from the bridging effect between the Bi2Te3 grains and CNTs. The maximum ZT is improved by almost a factor of 2 due to the simultaneous optimization of electrical and thermal performances. Our study demonstrates the superiority of constructing a bulk thermoelectric composite with nanopores by the uniform dispersion of CNTs through a CG technique for enhanced thermoelectric properties, which provides a wider approach to thermoelectric nanostructure engineering.

  16. Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3)

    Science.gov (United States)

    Meng, Chang-Yu; Wei, Ming-Fang; Geng, Lei; Hu, Pei-Qing; Yu, Meng-Xia; Cheng, Wen-Dan

    2016-07-01

    Two new bismuth(III) selenite/tellurite nitrates, [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV-vis-NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P21/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi3O2)(SeO3)2](NO3) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetric building units, exhibit two different types of structures. The structure of [(Bi3O2)(SeO3)2](NO3) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi3O2)(SeO3)2] 3∞ with NO3- anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO3)](NO3) features 2D bismuth(III) tellurite [Bi(TeO3)2]2∞ layers separated by NO3- anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors.

  17. Preparation of n-type Bi{sub 2}Te{sub 3} thermoelectric materials by non-contact dispenser printing combined with selective laser melting

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Keping; Yan, Yonggao; Zhang, Jian; Mao, Yu; Xie, Hongyao; Zhang, Qingjie; Tang, Xinfeng [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei (China); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, WA (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI (United States)

    2017-06-15

    The manufacturing cost has been a bottle neck for broader applications of thermoelectric (TE) modules. We have developed a rapid, facile, and low cost method that combines non-contact dispenser printing with selective laser melting (SLM) and we demonstrate it on n-type Bi{sub 2}Te{sub 3}-based materials. Using this approach, single phase n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} thin layers with the Seebeck coefficient of -152 μV K{sup -1} at 300 K have been prepared. Assembling such thin layers on top of each other, the performance of thus prepared bulk sample is comparable to Bi{sub 2}Te{sub 3}-based materials fabricated by the conventional techniques. Dispenser printing combined with SLM is a promising manufacturing process for TE materials. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys

    Directory of Open Access Journals (Sweden)

    Kim E.-B.

    2017-06-01

    Full Text Available In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. The Bi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.

  19. Conductance relaxation in GeBiTe: Slow thermalization in an open quantum system

    Science.gov (United States)

    Ovadyahu, Z.

    2018-02-01

    This work describes the microstructure and transport properties of GeBixTey films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbxTey , is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p -type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced photoconductive response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. Persistent photoconductivity is observable in GeBixTey films at the entire range of sheet resistances studied in this work (≈103Ω to ≈55 M Ω ). The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched exponential (Kohlrausch law). Intrinsic electron-glass effects, on the other hand, are observable in thin films of GeBixTey only for samples that are strongly localized just like it was noted with the seven electron glasses previously studied. These include a memory dip which is the defining attribute of the phenomenon. The memory dip in GeBixTey is the widest amongst the germanium-telluride alloys studied to date consistent with the high carrier concentration N ≥1021cm-3 of this compound. The thermalization process exhibited in either the PPC state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some nontrivial effects, in particular, the visibility of the memory dip is enhanced in the PPC state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle interaction and quench disorder is discussed.

  20. Evidence for surface-generated photocurrent in (Bi,Sb)2Se3and(Bi,Sb)2Te3 thin films

    Science.gov (United States)

    Pan, Yu; Richardella, Anthony; Yao, Bing; Lee, Joon Sue; Flanagan, Thomas; Kandala, Abhinav; Samarth, Nitin; Yeats, Andrew; Mintun, Peter; Awschalom, David

    2015-03-01

    Illumination with circularly polarized light is known produce a helicity-dependent photocurrent in topological insulators such as Bi2Se3 [e.g. Nature Nanotech. 7, 96 (2012)]. However, the exact origin of this effect is still unclear since it is observed with photons well above the bulk band gap. We report measurements of the polarization-dependent photocurrent in a series of (Bi,Sb)2Se3 thin films with different carrier concentrations and find that the photocurrent is enhanced as we increase the population of the surface states. This finding is supported by a study of helicity-dependent photocurrents in back-gated (Bi,Sb)2Te3 thin films, where the chemical potential is varied electrostatically. By illuminating our samples at different wavelengths, we show that the helicity-dependent photocurrent is enhanced when the photon energy approaches the energy difference between the lowest and first excited (unoccupied) topological surface states. This leads us to attribute the helicity-dependent photocurrent in topological insulators to optical excitations between these two spin-textured surface states. We will also discuss experiments imaging the spatial variation of these helicity-dependent photocurrents. This work is supported by ONR.

  1. Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process

    Energy Technology Data Exchange (ETDEWEB)

    Jung, B Y; Choi, J S; Oh, T S; Hyun, D B

    1997-07-01

    Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

  2. Thermoelectric properties of I-doped n-type Bi2Te3-based material prepared by hydrothermal and subsequent hot pressing

    Directory of Open Access Journals (Sweden)

    Fang Wu

    2017-04-01

    Full Text Available I-doped Bi2Te3−xIx (x=0, 0.05, 0.1, 0.2 flower-like nanoparticles were synthesized by a hydrothermal method through a careful adjustment of the amount of ethylenediamine tetraacetic acid surfactant. The nanopowders of flower-like nanoparticles were hot-pressed into bulk pellets and the thermoelectric properties of the pellets were investigated. The results showed that I-doping decreased the electrical resistivity effectively, and the thermal conductivitives of the Bi2Te3−xIx bulk samples was lower because of the closer atomic mass of I compared to Te. As a result, a ZT value of 1.1 was attained at 448 K for the Bi2Te2.9I0.1 sample.

  3. Tolerance of topological surface state towards adsorbed magnetic moments: Fe on Bi{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, Markus; Marchenko, Dmitry; Sanchez-Barriga, Jaime; Varykhalov, Andrei; Rader, Oliver [Helmholtz-Zentrum fuer Materialien und Energie, Berlin (Germany); Volykhov, Andrei; Yashina, Lada [Moscow State University, Moskau, Russland (Russian Federation)

    2011-07-01

    Topological surface states on Bi{sub 2}Se{sub 3} and Bi{sub 2}Te{sub 3} are protected by time reversal symmetry. Magnetic fields break time-reversal symmetry, and they have been used in two-dimensional spin quantum-Hall systems to destroy the topological edge states. Another possibility is to introduce magnetic moments. This has been done by substitution of Mn and Fe into the bulk. For Fe a small gap of 44meV was created, however, at very large amounts (12%). In this work, we deposit Fe directly onto the surface where the topological surface state is localized. We show for coverages of 0.25 and 1 ML Fe that the Dirac point remains intact and no gap appears. Core level spectroscopy of Bi and Te states gives insight into the interaction between substrate and adatoms. In addition, extra surface states appear at the Fermi energy which show a large Rashba-type spin-orbit splitting. The orientation of the spin of both, the topological as well as the Rashba-type split surface states is analysed.

  4. Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

    Science.gov (United States)

    Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

    2018-06-01

    Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

  5. Improvement of thermoelectric properties induced by uniquely ordered lattice field in Bi2Se0.5Te2.5 pillar array

    International Nuclear Information System (INIS)

    Tan, Ming; Hao, Yanming; Wang, Gangzhi

    2014-01-01

    In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The n-Bi 2 Se 0.5 Te 2.5 pillar array film was successfully achieved by a simple ion beam assisted deposition technique. This oriented pillar array structure is clear with pillar diameter of about 30 nm, exhibiting a uniquely ordered lattice field. The properties of the ordered Bi 2 Se 0.5 Te 2.5 pillar array were greatly enhanced in comparison with those of the ordinary film. The Bi 2 Se 0.5 Te 2.5 pillar array with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 film. Introduction of such ordered lattice field into TE films is therefore a very promising approach. - Graphical abstract: In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The Bi 2 Se 0.5 Te 2.5 pillar array film with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, the lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 pillar array. Introduction of such uniquely ordered lattice field into TE films is therefore a very promising approach. In (a) TEM and (b) HRTEM images of the ordered Bi 2 Se 0.5 Te 2.5 column array. - Highlights: • Uniquely ordered Bi 2 Se 0.5 Te 2.5 pillar array was achieved by an IBAD method. • The pillar array with an ordered lattice field exhibits attractive TE property. • The transport mechanism of such ordered pillar array is proposed and

  6. Effect of polarizable lone pair cations on the second-harmonic generation (SHG) properties of noncentrosymmetric (NCS) Bi(2-x)Y(x)TeO₅ (x = 0-0.2).

    Science.gov (United States)

    Jo, Hongil; Kim, Yeong Hun; Lee, Dong Woo; Ok, Kang Min

    2014-08-14

    Y(3+)-doped noncentrosymmetric (NCS) bismuth tellurite materials, Bi(2-x)Y(x)TeO5 (x = 0, 0.1, and 0.2), have been synthesized through standard solid-state reactions and structurally characterized by powder neutron diffraction. The reported NCS materials crystallize in the orthorhombic space group Abm2 (no. 39), and exhibit pseudo-three-dimensional frameworks that are composed of BiO3, BiO5, and TeO3 polyhedra. Detailed diffraction studies show that the cell volume of Bi(2-x)Y(x)TeO5 decreases with an increasing amount of Y(3+)on the Bi(3+) sites. However, no ordering between Bi(3+) and Y(3+) was observed in the Bi(2-x)Y(x)TeO5. Powder second-harmonic generation (SHG) measurements, using 1064 nm radiation, reveal that Bi2TeO5, Bi(1.9)Y(0.1)TeO5, and Bi(1.8)Y(0.2)TeO5 exhibit SHG efficiencies of approximately 300, 200, and 60 times that of α-SiO2, respectively. The reduction in SHG for Y(3+)-doped materials is consistent with the lack of net moment originating from polyhedra with a polarizable Bi(3+) cation.

  7. Structure of Profiled Crystals Based on Solid Solutions of Bi2Te3 and Their X-Ray Diagnostics

    Science.gov (United States)

    Voronin, A. I.; Bublik, V. T.; Tabachkova, N. Yu.; Belov, Yu. M.

    2011-05-01

    In this work, we used x-ray structural diagnostic data to reveal the formation of structural regularities in profiled polycrystalline ingots based on Bi and Sb chalcogenide solid solutions. In Bi2Te3 lattice crystals, the solid phase grows such that the cleavage surfaces are perpendicular to the crystallization front. The crystallization singularity determines the nature of the growth texture. Because texture is an important factor determining the anisotropy of properties, which in turn determines the suitability of an ingot for production of modules and the possibility of figure of merit improvement, its diagnostics is an important issue for technology testing. Examples of texture analysis using the method of straight pole figure (SPF) construction for profiled crystals are provided. The structure of the surface layers in the profiled ingots was studied after electroerosion cutting. In addition, the method of estimation of the disturbed layer depth based on the nature of texture changes was used.

  8. Electrodeposition of textured Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires with enhanced electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)

    2016-04-15

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  9. Raman scattering investigation of Bi2Te3 hexagonal nanoplates prepared by a solvothermal process in the absence of NaOH

    International Nuclear Information System (INIS)

    Liang Yujie; Wang Wenzhong; Zeng Baoqing; Zhang Guling; Huang Jing; Li Jin; Li Te; Song Yangyang; Zhang Xiuyu

    2011-01-01

    Research highlights: → Hexagonal Bi 2 Te 3 thin nanoplates were synthesized by a simple solvothermal method. → Optical properties of the nanoplates were investigated by micro-Raman spectroscopy. → Infrared (IR) active mode (A 1u ) is greatly activated in Raman scattering spectrum. → Infrared (IR) active mode (A 1u ) shows up in Raman spectrum of hexagonal nanoplates. → Raman spectrum clearly shows crystal symmetry breaking of hexagonal nanoplates. - Abstract: Hexagonal Bi 2 Te 3 nanoplates were synthesized by a simple solvothermal process in the absence of NaOH. The composition, morphology and size of the as-prepared products were characterized by powder X-ray diffraction (XRD) and transmission electron microscopy (TEM). Raman scattering optical properties of the as-prepared Bi 2 Te 3 nanoplates were investigated by micro-Raman spectroscopy. The Raman spectrum shows that infrared (IR) active mode (A 1u ), which must be odd parity and is Raman forbidden for bulk crystal due to its inversion symmetry, is greatly activated and shown up clearly in Raman scattering spectrum. We attribute the appearance of infrared active (A 1u ) in Raman spectrum to crystal symmetry breaking of Bi 2 Te 3 hexagonal nanoplates. The as-grown Bi 2 Te 3 hexagonal nanoplates, exhibiting novel Raman optical properties compared with bulk crystals, may find potential applications in thermoelectric devices.

  10. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

    International Nuclear Information System (INIS)

    Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

    2016-01-01

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  11. Improvement of thermoelectric properties of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films grown on graphene substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Choi, Ji Woon; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2017-06-15

    A study of substrate effect on the thermoelectric (TE) properties of Bi{sub 2}Te{sub 3} (BT) and Sb{sub 2}Te{sub 3} (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO{sub 2}/Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Effect of compositional dependence on physical and optical parameters of Te{sub 17}Se{sub 83−x}Bi{sub x} glassy system

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, HP 173234 (India); El-Bana, M.S.; Fouad, S.S. [Nano-Science and Semiconductor Laboratories, Department of Physics, Faculty of Education, Ain Shams University, Cairo (Egypt); Sharma, Vineet [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, HP 173234 (India)

    2016-05-15

    In the present paper we have studied the effect of Bi addition on the physical and optical properties of thermally evaporated Te{sub 17}Se{sub 83−x}Bi{sub x} thin films. With Bi addition the density, mean coordination number, mechanical constraints, glass transition temperature increases. The other parameters theoretical energy gap, lone pair electron, deviation from stoichiometry decreases. Transmission spectra have been taken in the spectral range 400 nm–2500 nm using ultraviolet–visible–near infrared spectrophotometer. The fundamental absorption edge shifts towards longer wavelength with Bi incorporation. Optical energy gap and linear refractive index have been determined using transmission spectra. A good correlation has been drawn between the optical and theoretical parameters. Using linear optical parameters, the nonlinear optical susceptibility and nonlinear refractive index have been estimated. - Highlights: • Physical and optical parameters have been analyzed for Te{sub 17}Se{sub 83−x}Bi{sub x} glassy alloys. • The addition of Bi leads to decrease of average heat of atomization and cohesive energy. • The optical band gap decreases with increasing Bi content. • The third order susceptibility and nonlinear refractive index show an increase with increase in the Bi content.

  13. Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

    Science.gov (United States)

    Ngabonziza, P.; Wang, Y.; Brinkman, A.

    2018-04-01

    An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

  14. Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

    Energy Technology Data Exchange (ETDEWEB)

    Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Norimatsu, Katsura; Tsuruta, Tetsuya; Igarashi, Kyushiro; Kayanuma, Yosuke; Sasagawa, Takao; Nakamura, Kazutaka G. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Tanaka, Sei' ichi; Ishikawa, Tadahiko; Koshihara, Shin-ya [Department of Chemistry and Materials Science, Tokyo Institute of Technology, Tokyo 152-8551 (Japan); Keskin, Sercan [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Miller, R. J. Dwayne [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Departments of Chemistry and Physics, University of Toronto, Toronto M5S 3H6 (Canada); Onda, Ken [PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

    2016-07-14

    The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

  15. Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

    Science.gov (United States)

    Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

    2017-10-01

    We have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

  16. Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

    Science.gov (United States)

    Jung, Woo-Jin; Kim, Il-Ho

    2018-03-01

    P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

  17. Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9 films

    Directory of Open Access Journals (Sweden)

    J. H. Park

    2015-08-01

    Full Text Available In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9 as a phase change material for reliable PCM (Phase Change Memory with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9 film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0 films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0 film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0 were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9 is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

  18. Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

    Science.gov (United States)

    Park, J. H.; Kim, S.-W.; Kim, J. H.; Ko, D.-H.; Wu, Z.; Cho, S. L.; Ahn, D.; Ahn, D. H.; Lee, J. M.; Nam, S. W.

    2015-08-01

    In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

  19. The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kulbachinskii, V A; Negishi, H; Sasaki, M; Giman, Y; Inoue, M

    1997-07-01

    Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} (0 < x < 0.03) singlecrystals have been measured in the temperature range 4.2--300K. By doping of Sn atoms into the host Bi{sub 2}Te{sub 3} lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30--150K for x {le} 0,0075. The activation type behavior of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.

  20. Self-Assembly of Bi2Te3-Nanoplate/Graphene-Nanosheet Hybrid by One-Pot Route and Its Improved Li-Storage Properties

    Directory of Open Access Journals (Sweden)

    Xinbing Zhao

    2012-07-01

    Full Text Available A sandwich structured Bi2Te3-nanoplates/graphene-nanosheet (Bi2Te3/G hybrid has been synthesized by a facile in situ solvothermal route and has been investigated as a potential anode material for Li-ion batteries. Bi2Te3 grows during the solvothermal process with the simultaneous reduction of graphite oxide into graphene. The in situ formation process of the hybrid has been investigated by X-ray diffraction and X-ray photoelectron spectra. The Li-storage mechanism and performance of Bi2Te3/G and bare Bi2Te3 have been studied by galvanostatic cycling and cyclic voltammetry. The Bi2Te3/G sandwich exhibits an obviously improved cycling stability compared to bare Bi2Te3. The enhancement in electrochemical performance can be attributed to the combined conducting, confining and dispersing effects of graphene for Bi2Te3 nanoplates and to the self-assembled sandwich structure.

  1. Measurement of the transport properties of (Sb2Te3)sub(0.75)(Bi2Te3)sub(0.25) solid solution with addition of Tl2Te3

    International Nuclear Information System (INIS)

    Sher, A.

    1983-03-01

    The thermoelectric parameters of the solid solution (Sb 3 Te 3 )sub(0.75)(Bi 2 Te 3 )sub(0.25) in the presence of a low concentration of Tl 3 Te 3 were examined. The electrical conductivity, thermal conductivity, Seebeck coefficient and Hall constant were measured on samples which represent the upper parts of the ingots, in the temperature range 10K-300K. The lattice thermal conductivity, carrier, mobility, effective mass and carrier concentration were calculated from the measured parameters. The variation of the carrier mobility with temperature was similar in all the measured samples. At temperatures higher than 80K the mobility was proportional to Tsup(-33/2). At lower temperatures the mobility approached a saturation value which decreased with increasing Tl 2 Te 3 concentration. At about room temperature, the mobility was already not proportional to Tsup(x). Increasing the Tl 2 Te 3 or Sb 2 Se 3 concentration resulted in a lower deviation from the Tsup(x) dependence and a slower increase in the lattice thermal conductivity with decreasing temperature. Addition of Tl 2 Te 3 to the solid solution resulted in minor improvement in the thermoelectric quality which depends on the mobility, effective mass and lattice thermal conductivity. The thermoelectric properties were nearly the same as those obtained by addition of Sb 2 Se 3 to the solid solution. The addition of Tl 2 Te 3 annuled an effect of increasing carrier concentration with decreasing temperature. It resulted in a slower decrease in the Seebeck coefficient. (H.K.)

  2. Growth behavior of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Kang, Min A.; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kang, Seong Gu [School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2017-03-15

    A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was observed when grown on graphene or SiO{sub 2}/Si substrate. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO{sub 2}/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Enhanced thermoelectric figure-of-merit in Bi-Sb-Te nanocomposites with homogenously dispersed oxide ceramic ZrO2 nanoparticles

    Science.gov (United States)

    Madavali, B.; Kim, H. S.; Lee, K. H.; Hong, S. J.

    2017-06-01

    In this research, p-type BiSbTe/ZrO2 nanocomposite powders were fabricated by high-energy ball milling. Different weight percentages of ZrO2 (2, 4, and 6 wt. %) nanoparticles were incorporated into the bulk (BiSbTe) matrix by consolidation of as-synthesized nanocomposites (NCs) powder by spark plasma sintering at 673 K. The phase and existence of ZrO2 nano-inclusions was confirmed by X-ray diffraction and transmission electron microscopy-selected area electron diffraction analysis. The Seebeck coefficient of the BiSbTe/ZrO2 NCs was significantly improved (˜36% for 4 wt. % added NCs) by a decrease in the carrier concentration and energy filtering effect, whereas the thermal conductivity was much reduced via strong scattering of carriers/phonons. The peak thermoelectric figure-of-merit (1.34 ± 0.06) was obtained for BiSbTe into which 2 wt. % ZrO2 was dispersed, which was approximately 20% greater than that of the undispersed sample. The hardness of the nanocomposites was significantly improved (˜27%) due to grain-boundary hardening and a dispersion strengthening mechanism.

  4. Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

    NARCIS (Netherlands)

    Li, C.; De Ronde, B.; Nikitin, A.; Huang, Y.; Golden, M.S.; De Visser, A.; Brinkman, A.

    2017-01-01

    The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the

  5. Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

    Science.gov (United States)

    Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

    2018-03-01

    Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state

  6. Electron Microscopy investigation of Sb{sub 2-x}Bi{sub x}Te{sub 3} hexagonal crystal structure growth prepared from sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Tongpeng, Suparat [Center of Excellence for Innovation in Chemistry (PERCH-CIC), Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarakonsri, Thapanee, E-mail: tsarakonsri@gmail.com [Center of Excellence for Innovation in Chemistry (PERCH-CIC), Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Isoda, Seiji [Institute for Integrated Cell-Materials Sciences (iCeMS), Kyoto University (Japan); Haruta, Mitsutaka; Kurata, Hiroki [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Thanachayanont, Chanchana [National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Rd., Klong 1, KlongLuang, Pathumthani (Thailand)

    2015-11-01

    Sb – BiTe ternary compounds, with ZT values (unitless figure of merit for semiconductor materials) as high as 1.28, have long been known as the best thermoelectric materials for use in thermoelectric cooling and power generation operated near room temperature. In this research, p-type Sb{sub 2-x}Bi{sub x}Te{sub 3} (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) compounds were synthesized by sol–gel method using bismuth (III) acetate, antimony (III) acetate and tellurium dioxide as precursors. The mole ratio of metal precursor: solvent: organic solvent was 1:60:4. The obtained gels of Sb{sub 2-x}Bi{sub x}Te{sub 3} were annealed to complete the synthesis at 773 K for 2 h under nitrogen atmosphere. Sb{sub 2}Te{sub 3}, Sb{sub 1.6}Bi{sub 0.4}Te{sub 3}, and SbBiTe{sub 3} compounds were observed by X-ray Diffraction (XRD) as main phases in samples with x = 0–0.2, 0.4–0.6, and 0.8–1.0, respectively. An increase in the lattice parameter a suggested an expansion of unit cells, due to the substitution of Bi in Sb crystallographic positions. The morphology, as revealed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) images, is one of aligned hexagonal nanosheets, while the Selected Area Diffraction (SAD) patterns matched well with the phases characterized by XRD. - Highlights: • Sb{sub 2-x}Bi{sub x}Te{sub 3} (x = 0.0–1.0) hexagonal nanosheets were prepared by sol–gel method. • It is the simple and economic method with the first time reported for these structures. • High crystallinity hexagonal nanosheets were oriented into small bundles form. • It is expected to have a high ZT value at room temperature.

  7. Fabrication and thermoelectric performance of textured n-type Bi2(Te,Se)3 by spark plasma sintering

    International Nuclear Information System (INIS)

    Jiang Jun; Chen Lidong; Bai Shengqiang; Yao Qin; Wang Qun

    2005-01-01

    The n-type Bi 2 (Te,Se) 3 thermoelectric materials with preferred grain orientation have been fabricated through the spark plasma sintering (SPS) technique. The c-axis of the grains in the sintered samples were preferentially oriented parallel to the pressing direction, the orientation factor of the (0 0 l) planes changed from 0.4 to 0.85 with the sintering conditions. The anisotropy was investigated by measuring the electrical conductivities in the two directions perpendicular and parallel to the pressing direction. The optimal figure of merit ZT (ZT = α 2 σT/κ) of the sintered materials in the direction perpendicular to the pressing direction was comparative to that of the zone-melted materials in the same crystallographic direction, while the bending strength reached about 80 MPa, which is 7-8 times of that of the zone-melted materials

  8. Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

    2015-07-01

    Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

  9. Synthesis and temperature dependent Raman studies of large crystalline faces topological GeBi4Te7 single crystal

    Science.gov (United States)

    Mal, Priyanath; Bera, G.; Turpu, G. R.; Srivastava, Sunil K.; Das, Pradip

    2018-05-01

    We present a study of structural and vibrational properties of topological insulator GeBi4Te7. Modified Bridgeman technique is employed to synthesize the single crystal with relatively large crystalline faces. Sharp (0 0 l) reflection confirms the high crystallinity of the single crystal. We have performed temperature dependent Raman measurement for both parallel and perpendicular to crystallographic c axis geometry. In parallel configuration we have observed seven Raman modes whereas in perpendicular geometry only four of these are identified. Appearance and disappearance of Raman modes having different intensities for parallel and perpendicular to c measurement attribute to the mode polarization. Progressive blue shift is observed with lowering temperature, reflects the increase in internal stress.

  10. Optical transitions of Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 glass.

    Science.gov (United States)

    Shen, Xiang; Nie, Qiuhua; Xu, Tiefeng; Gao, Yuan

    2005-10-01

    Optical absorption and emission properties of the Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 (TWB) glass has been investigated. The transition probabilities, excited state lifetimes, and the branching ratios have been predicted for Er3+ based on the Judd-Ofelt theory. The broad 1.5 microm fluorescence was observed under 970 nm excitation, and its full width at half maximum (FWHM) is 77 nm. The emission cross-section is calculated using the McCumber theory, and the peak emission cross-section is 1.03 x 10(-21) cm2 at 1.531 microm. This value is much larger than those of the silicate and phosphate glasses. Efficient green and weak red upconversion luminescence from Er3+ centers in the glass sample was observed at room temperature, and the upconversion excitation processes have been analyzed.

  11. Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-11-02

    Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

  12. Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

    Science.gov (United States)

    Ideue, T.; Checkelsky, J. G.; Bahramy, M. S.; Murakawa, H.; Kaneko, Y.; Nagaosa, N.; Tokura, Y.

    2014-10-01

    BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov-de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near Pc=3.5 GPa.

  13. Thermoelectric Transport Properties of Cu Nanoprecipitates Embedded Bi2Te2.7Se0.3

    Directory of Open Access Journals (Sweden)

    Eunsil Lee

    2015-01-01

    Full Text Available We suggest a simple and scalable synthesis to prepare Cu-Bi2Te2.7Se0.3 (Cu-BTS nanocomposites. By precipitating Cu nanoparticle (NP in colloidal suspension of as-exfoliated BTS, homogeneous mixtures of Cu NP and BTS nanosheet were readily achieved, and then the sintered nanocomposites were fabricated by spark plasma sintering technique using the mixed powder as a raw material. The precipitated Cu NPs in the BTS matrix effectively generated nanograin (BTS and heterointerface (Cu/BTS structures. The maximum ZT of 0.90 at 400 K, which is 15% higher compared to that of pristine BTS, was obtained in 3 vol% Cu-BTS nanocomposite. The enhancement of ZT resulted from improved power factor by carrier filtering effect due to the Cu nanoprecipitates in the BTS matrix.

  14. Faraday Rotation Due to Surface States in the Topological Insulator (Bi1-xSbx)2Te3.

    Science.gov (United States)

    Shao, Yinming; Post, Kirk W; Wu, Jhih-Sheng; Dai, Siyuan; Frenzel, Alex J; Richardella, Anthony R; Lee, Joon Sue; Samarth, Nitin; Fogler, Michael M; Balatsky, Alexander V; Kharzeev, Dmitri E; Basov, D N

    2017-02-08

    Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2 Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.

  15. Influence of Ga-doping on the thermoelectric properties of Bi(2−xGaxTe2.7Se0.3 alloy

    Directory of Open Access Journals (Sweden)

    Xingkai Duan

    2015-02-01

    Full Text Available Bi(2−xGaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12 alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2−xGaxTe2.7Se0.3 (x=0.04 sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.

  16. Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

    Science.gov (United States)

    Jiang, Chengpeng; Fan, Xi'an; Hu, Jie; Feng, Bo; Xiang, Qiusheng; Li, Guangqiang; Li, Yawei; He, Zhu

    2018-04-01

    During the past few decades, Bi2Te3-based alloys have been investigated extensively because of their promising application in the area of low temperature waste heat thermoelectric power generation. However, their thermal stability must be evaluated to explore the appropriate service temperature. In this work, the thermal stability of zone melting p-type (Bi, Sb)2Te3-based ingots was investigated under different annealing treatment conditions. The effect of service temperature on the thermoelectric properties and hardness of the samples was also discussed in detail. The results showed that the grain size, density, dimension size and mass remained nearly unchanged when the service temperature was below 523 K, which suggested that the geometry size of zone melting p-type (Bi, Sb)2Te3-based materials was stable below 523 K. The power factor and Vickers hardness of the ingots also changed little and maintained good thermal stability. Unfortunately, the thermal conductivity increased with increasing annealing temperature, which resulted in an obvious decrease of the zT value. In addition, the thermal stabilities of the zone melting p-type (Bi, Sb)2Te3-based materials and the corresponding powder metallurgy samples were also compared. All evidence implied that the thermal stabilities of the zone-melted (ZMed) p-type (Bi, Sb)2Te3 ingots in terms of crystal structure, geometry size, power factor (PF) and hardness were better than those of the corresponding powder metallurgy samples. However, their thermal stabilities in terms of zT values were similar under different annealing temperatures.

  17. 3D printing of shape-conformable thermoelectric materials using all-inorganic Bi2Te3-based inks

    Science.gov (United States)

    Kim, Fredrick; Kwon, Beomjin; Eom, Youngho; Lee, Ji Eun; Park, Sangmin; Jo, Seungki; Park, Sung Hoon; Kim, Bong-Seo; Im, Hye Jin; Lee, Min Ho; Min, Tae Sik; Kim, Kyung Tae; Chae, Han Gi; King, William P.; Son, Jae Sung

    2018-04-01

    Thermoelectric energy conversion offers a unique solution for generating electricity from waste heat. However, despite recent improvements in the efficiency of thermoelectric materials, the widespread application of thermoelectric generators has been hampered by challenges in fabricating thermoelectric materials with appropriate dimensions to perfectly fit heat sources. Herein, we report an extrusion-based three-dimensional printing method to produce thermoelectric materials with geometries suitable for heat sources. All-inorganic viscoelastic inks were synthesized using Sb2Te3 chalcogenidometallate ions as inorganic binders for Bi2Te3-based particles. Three-dimensional printed materials with various geometries showed homogenous thermoelectric properties, and their dimensionless figure-of-merit values of 0.9 (p-type) and 0.6 (n-type) were comparable to the bulk values. Conformal cylindrical thermoelectric generators made of 3D-printed half rings mounted on an alumina pipe were studied both experimentally and computationally. Simulations show that the power output of the conformal, shape-optimized generator is higher than that of conventional planar generators.

  18. Enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6} under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shuguang, E-mail: csustcsg@yahoo.com; Li, Yuhan; Wu, Zixu; Wu, Baoxin; Li, Haibin; Li, Fujin

    2017-05-15

    Te-doped Bi{sub 2}MoO{sub 6} photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi{sub 2}MoO{sub 6} lattice with the substitution of Te{sup 4+} to Mo{sup 6+}. With increasing Te-doping concentration in Bi{sub 2}MoO{sub 6}, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi{sub 2}MoO{sub 6} photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi{sub 2}MoO{sub 6} was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained. The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te{sup 4+} to Mo{sup 6+} acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi{sub 2}MoO{sub 6} to be favorable for the efficient methylene blue degradation. - Graphical abstract: With the substitution of Te{sup 4+} to Mo{sup 6+}, effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability is achieved to be responsible for enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6}. - Highlights: • Nonmetal Te is incorporated into Bi{sub 2}MoO{sub 6} with the substitution of Te{sup 4+} to Mo{sup 6+}. • Revealing inhomogeneous lattice distortion and improved electron capturing ability. • Effective separation of photogenerated carriers in Te-doped Bi{sub 2}MoO{sub 6} is achieved. • The mechanism of methylene blue degradation over Te-doped Bi{sub 2}MoO{sub 6} is proposed.

  19. Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.

    Science.gov (United States)

    Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y

    2015-04-14

    The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

  20. Evolution of MoTeO x/SiO 2 and MoBiTeO x/SiO 2 catalysts in the partial oxidation of propane to acrolein

    Science.gov (United States)

    He, Yiming; Wu, Ying

    2010-04-01

    A thorough investigation of the catalysts Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 in the partial oxidation of propane is presented in this paper, in order to elucidate the nature and behavior of the active surface. The catalysts' structures and redox properties were investigated by means of X-ray powder diffraction, Raman spectroscopy, in situ Raman spectroscopy, X-ray photoelectron spectroscopy, and H 2-TPR techniques. The results indicate that Te-polymolybdate is the main active phase on fresh catalysts. During reaction, the catalysts underwent a progressive reduction, resulting in the reconstruction of the active surface and the formation of a MoO 3 phase. The synergistic effect between Te-polymolybdate and MoO 3 was assumed to promote catalytic performance. The different stabilities of Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 catalysts are also discussed.

  1. Structural, chemical, and thermoelectric properties of Bi{sub 2}Te{sub 3} Peltier materials. Bulk, thin films, and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Peranio, Nicola

    2008-07-01

    In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi{sub 2}Te{sub 3} and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi{sub 2}(Te{sub 0.91}Se{sub 0.09}){sub 3} and p-type (Bi{sub 0.26}Sb{sub 0.74}){sub 1.98}(Te{sub 0.99}Se{sub 0.01}){sub 3.02} bulk materials synthesised by the Bridgman technique. (II) Bi{sub 2}Te{sub 3} thin films and Bi{sub 2}Te{sub 3}/Bi{sub 2}(Te{sub 0.88}Se{sub 0.12}){sub 3} superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF{sub 2} substrates with periods of {delta}-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to <5,-5,1> and an amplitude of about 10 pm and (ii) a wave vector parallel to {l_brace}1,0,10{r_brace} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

  2. Effects of Ni and carbon-coated Ni addition on the thermoelectric properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} base composites

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sang Min; Dharmaiah, Peyala; Femi, Olu Emmanuel; Lee, Chul Hee; Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr

    2017-07-01

    In this paper, we report the effect of nickel (Ni) and carbon coated nickel (C-Ni) on the thermoelectric and mechanical properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (GA) base composites. Ni and C-Ni powders were synthesized using pulse wire evaporation and mixed with 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} in a planetary ball mill. The morphology of the Ni and C-Ni powders and GA + x (x = none, Ni, or C-Ni) composites were examined using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The thermoelectric properties of the GA + x (x = none, Ni, or C-Ni) composites shows that the addition of Ni increases the carrier concentration while the presence of C-Ni reduces the carrier concentration to a level comparable to the bare sample (x = 0). Subsequently, the Seebeck coefficient of the GA + C-Ni sample increases by about 18% more than in the bare sample. The thermal conductivity of the GA + Ni and GA + C-Ni samples was considerably lower at room temperature compared to the bare sample. The mechanical properties of the GA + Ni and GA + C-Ni composite samples show a three-fold improvement compared to the bare sample. - Highlights: • Ni and carbon-coated Ni nanoparticles were incorporated into 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (BST) matrix. • Seebeck coefficient increased by 18% for BST/carbon coated Ni composites. • BST/carbon coated Ni composite reduces the thermal conductivity (21%). • The Vickers hardness of the BST/C-Ni composite samples significantly improved.

  3. Effect of antimony concentration on structural and transport properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} mixed crystal

    Energy Technology Data Exchange (ETDEWEB)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, S.; Banerjee, Aritra, E-mail: aritrabanerjee.cu@gmail.com [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata-700009 (India)

    2015-06-24

    Polycrystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} (0.60≤x≤0.68) alloys have been synthesized by solid state reaction method. Structural characterizations have been done using X-Ray Diffraction (XRD). Lattice parameter decreases with antimony (Sb) concentration. Sb doping leads to the modification in band structure and Fermi surface geometry. Band gap calculated from thermal variation of resistivity (ρ-T) data, decreases with Sb concentration. Sb concentration dependent power factor near room temperature have been calculated from obtained resistivity and thermopower data. Highest power factor obtained for (Bi{sub 0.40}Sb{sub 0.60}){sub 2}Te{sub 3} alloy.

  4. Propiedades mecánicas del telururo de bismuto (Bi2Te3 procesado mediante torsión bajo alta presión (HPT

    Directory of Open Access Journals (Sweden)

    Santamaría, Jon Ander

    2013-06-01

    Full Text Available Bismuth telluride, Bi2Te3, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi2Te3 is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric “figure of merit” results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa using high pressure torsion (HPT, one turn at room temperature. Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation.Actualmente el telururo de bismuto (Bi2Te3 es el material termoeléctrico más ampliamente usado en sistemas de refrigeración comerciales o en la conversión de energía en torno a temperatura ambiente. Debido a su estructura laminar altamente anisótropa, el Bi2Te3 es muy frágil y suele agrietarse fácilmente a lo largo de su plano basal. Se espera que el afino del tamaño de grano incremente su tenacidad, con la ventaja de que al mismo tiempo la figura de mérito termoeléctrica se vea incrementada. En este trabajo, polvos del compuesto Bi2Te3 se han compactado mediante dos métodos convencionales y mediante deformación plástica severa bajo alta presión (3 GPa usando la técnica HPT (torsión a alta presión, 1 giro de deformación. Se ha conseguido una densidad cercana a la teórica. La dureza y tenacidad de los compuestos se han ensayado mediante micro- y nano- indentación.

  5. Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

    Science.gov (United States)

    Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

    2016-09-01

    A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

  6. Electronic and transport properties of the Mn-doped topological insulator Bi.sub.2./sub.Te.sub.3./sub.: a first-principles study

    Czech Academy of Sciences Publication Activity Database

    Carva, K.; Kudrnovský, Josef; Máca, František; Drchal, Václav; Turek, I.; Baláž, P.; Tkáč, V.; Holý, V.; Sechovský, V.; Honolka, Jan

    2016-01-01

    Roč. 93, č. 21 (2016), s. 1-8, č. článku 214409. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GA14-30062S Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * electronic structure * transport * Bi 2 Te 3 * Mn dopant Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  7. Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Seo, J; Park, K; Lee, C; Kim, J

    1997-07-01

    The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

  8. Intense upconversion luminescence and effect of local environment for Tm3+/Yb3+ co-doped novel TeO2-BiCl3 glass system.

    Science.gov (United States)

    Wang, Guonian; Dai, Shixun; Zhang, Junjie; Wen, Lei; Yang, Jianhu; Jiang, Zhonghong

    2006-05-15

    We present the results of a study that uses theoretical and experimental methods to investigate the characteristics of the upconversion luminescence of Tm3+/Yb3+ codoped TeO2-BiCl3 glass system as a function of the BiCl3 fraction. These glasses are potentially important in the design of upconversion fiber lasers. Effect of local environment around Tm3+ on upconversion fluorescence intensity was analyzed by theoretical calculations. The structure and spectroscopic properties were investigated in the experiments by measuring the Raman spectra, IR transmission spectra, and absorption and fluorescence intensities at room temperature. The results indicate that blue luminescence quantum efficiency increases with increasing BiCl3 content from 10 to 60 mol%, which were interpreted by the increase of asymmetry of glass structure, decrease of phonon energy and removing of OH- groups.

  9. Measurement of thermal conductivity of Bi2Te3 nanowire using high-vacuum scanning thermal wave microscopy

    Science.gov (United States)

    Park, Kyungbae; Hwang, Gwangseok; Kim, Hayeong; Kim, Jungwon; Kim, Woochul; Kim, Sungjin; Kwon, Ohmyoung

    2016-02-01

    With the increasing application of nanomaterials in the development of high-efficiency thermoelectric energy conversion materials and electronic devices, the measurement of the intrinsic thermal conductivity of nanomaterials in the form of nanowires and nanofilms has become very important. However, the current widely used methods for measuring thermal conductivity have difficulties in eliminating the influence of interfacial thermal resistance (ITR) during the measurement. In this study, by using high-vacuum scanning thermal wave microscopy (HV-STWM), we propose a quantitative method for measuring the thermal conductivity of nanomaterials. By measuring the local phase lag of high-frequency (>10 kHz) thermal waves passing through a nanomaterial in a high-vacuum environment, HV-STWM eliminates the measurement errors due to ITR and the distortion due to heat transfer through air. By using HV-STWM, we measure the thermal conductivity of a Bi2Te3 nanowire. Because HV-STWM is quantitatively accurate and its specimen preparation is easier than in the thermal bridge method, we believe that HV-STWM will be widely used for measuring the thermal properties of various types of nanomaterials.

  10. Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

    Science.gov (United States)

    Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

    2014-03-01

    When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

  11. Topological surface states of Bi{sub 2}Te{sub 2}Se are robust against surface chemical modification

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Conor R.; Sahasrabudhe, Girija; Kushwaha, Satya Kumar; Cava, Robert J.; Schwartz, Jeffrey [Department of Chemistry, Princeton University, Princeton, NJ (United States); Xiong, Jun [Department of Physics, Princeton University, Princeton, NJ (United States)

    2014-12-01

    The robustness of the Dirac-like electronic states on the surfaces of topological insulators (TIs) during materials process-ing is a prerequisite for their eventual device application. Here, the (001) cleavage surfaces of crystals of the topological insulator Bi{sub 2}Te{sub 2}Se (BTS) were subjected to several surface chemical modification procedures that are common for electronic materials. Through measurement of Shubnikov-de Hass (SdH) oscillations, which are the most sensitive measure of their quality, the surface states of the treated surfaces were compared to those of pristine BTS that had been exposed to ambient conditions. In each case - surface oxidation, deposition of thin layers of Ti or Zr oxides, or chemical modification of the surface oxides - the robustness of the topological surface electronic states was demonstrated by noting only very small changes in the frequency and amplitude of the SdH oscillations. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Evidence of a 2D Fermi surface due to surface states in a p-type metallic Bi2Te3

    Science.gov (United States)

    Shrestha, K.; Marinova, V.; Lorenz, B.; Chu, C. W.

    2018-05-01

    We present a systematic quantum oscillations study on a metallic, p-type Bi2Te3 topological single crystal in magnetic fields up to B  =  7 T. The maxima/minima positions of oscillations measured at different tilt angles align to one another when plotted as a function of the normal component of magnetic field, confirming the presence of the 2D Fermi surface. Additionally, the Berry phase, β  =  0.4  ±  0.05 obtained from the Landau level fan plot, is very close to the theoretical value of 0.5 for the Dirac particles, confirming the presence of topological surface states in the Bi2Te3 single crystal. Using the Lifshitz–Kosevich analyses, the Fermi energy is estimated to be meV, which is lower than that of other bismuth-based topological systems. The detection of surface states in the Bi2Te3 crystal can be explained by our previous hypothesis of the lower position of the Fermi surface that cuts the ‘M’-shaped valence band maxima. As a result, the bulk state frequency is shifted to higher magnetic fields, which allows measurement of the surface states signal at low magnetic fields.

  13. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  14. Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

    Science.gov (United States)

    Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

    2018-04-01

    In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

  15. Synthesis, crystal structure, and properties of KSbO{sub 3}-type Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11}

    Energy Technology Data Exchange (ETDEWEB)

    Li Manrong; Retuerto, Maria; Bok Go, Yong; Emge, Thomas J. [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States); Croft, Mark; Ignatov, Alex [Department of Physics and Astronomy, Rutgers, State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Ramanujachary, Kandalam V. [Department of Chemistry and Biochemistry, Rowan University, 210 Mullica Hill Road, Glassboro, NJ 08028 (United States); Dachraoui, Walid; Hadermann, Joke [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Tang Meibo; Zhao Jingtai [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); Greenblatt, Martha, E-mail: martha@rutchem.rutgers.edu [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States)

    2013-01-15

    Single crystals of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} were prepared from NaCl+KCl flux. This compound adopts KSbO{sub 3}-type crystal structure as evidenced by electron and single crystal X-ray diffraction analysis. The three-dimensional channel structure is formed by corner-sharing octahedral (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} dimers and two identical (Bi1){sub 4}(Bi2){sub 2} interpenetrating lattices. The intra-dimer Mn/Te-Mn/Te distances in Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} are short and are consistent with weak metal-metal interactions. The mixed oxidation state of manganese and the edge-sharing octahedral features are confirmed by X-ray near edge absorption spectroscopy measurements, which indicate Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}. The partial substitution of Te for Mn perturbs long-range magnetic interactions, thereby destroying the ferromagnetic ordering found in Bi{sub 3}Mn{sub 3}O{sub 11} (T{sub C}=150 K). - Graphical abstract: Single crystal of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} was grown from NaCl+KCl binary flux, suggesting that the high pressure Bi{sub 3}Mn{sub 3}O{sub 11} phase can be stabilized by partial substitution of Mn by Te at ambient pressure. Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} adopts a typical three dimensional KSbO{sub 3}-type crystal structure with three interpenetrating lattices and weak intra-dimmer metal-metal interaction caused by the d electrons of Mn. The edge-shared (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} octahedral dimer and mixed oxidation state of manganese (Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}) features were evidenced by X-ray absorption near edge spectroscopy. Compared with Bi{sub 3}Mn{sub 3}O{sub 11}, the Te substituted Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} relaxes the crystal structure, but destroys the long

  16. Determination of total Sb,Se Te, and Bi and evaluation of their inorganic species in garlic by hydride-generation-atomic-fluorescence spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Matos Reyes, M.N.; Cervera, M.L.; Guardia, M. de la [University of Valencia, Department of Analytical Chemistry, Burjassot, Valencia (Spain)

    2009-07-15

    A sensitive and simple analytical method has been developed for determination of Sb(III), Sb(V), Se(IV), Se(VI), Te(IV), Te(VI), and Bi(III) in garlic samples by using hydride-generation-atomic-fluorescence spectrometry (HG-AFS). The method is based on a single extraction of the inorganic species by sonication at room temperature with 1 mol L{sup -1} H{sub 2}SO{sub 4} and washing of the solid phase with 0.1% (w/v) EDTA, followed by measurement of the corresponding hydrides generated under two different experimental conditions directly and after a pre-reduction step. The limit of detection of the method was 0.7 ng g{sup -1} for Sb(III), 1.0 ng g{sup -1} for Sb(V), 1.3 ng g{sup -1} for Se(IV), 1.0 ng g{sup -1} for Se(VI), 1.1 ng g{sup -1} for Te(IV), 0.5 ng g{sup -1} for Te(VI), and 0.9 ng g{sup -1} for Bi(III), in all cases expressed in terms of sample dry weight. (orig.)

  17. Thermoelectric properties of n-type Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} fabricated by mechanical alloying and hot pressing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H J; Choi, J S; Oh, T S; Hyun, D B

    1997-07-01

    Thermoelectric properties of polycrystalline Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} (0.05 {le} x {le} 0.25), fabricated by mechanical alloying and hot pressing, have been investigated. Formation of n-type Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} alloy powders was completed by mechanical alloying for 3 hours at ball-to-material ratio of 5:1, and processing time for Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} formation increased with Bi{sub 2}Se{sub 3} content x. Figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}) was markedly increased by hot pressing at temperatures above 450 C, and maximum value of 1.9 x 10{sup {minus}3}/K was obtained by hot pressing at 550 C. With addition of 0.015 wt% Bi as acceptor dopant, figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} was hot pressed at 550 C, could be improved to 2.1 x 10{sup {minus}3}/K. When Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} was hot pressed at 550 C, figure-of-merit increased from 1.14 x 10{sup {minus}3}/K to 1.92 x 10{sup {minus}3}/K with increasing Bi{sub 2}Se{sub 3} content x from 0.05 to 0.15, and then decreased to 1.30 x 10{sup {minus}3}/K for x = 0.25 composition.

  18. Effect of current on the microstructure and performance of (Bi2Te3)0.2(Sb2Te3)0.8 thermoelectric material via field activated and pressure assisted sintering

    International Nuclear Information System (INIS)

    Chen Ruixue; Meng Qingsen; Fan Wenhao; Wang Zhong

    2011-01-01

    (Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 thermoelectric material was sintered via a field activated and pressure assisted sintering (FAPAS) process. By applying different current intensity (0, 60, 320 A/cm 2 ) in the sintering process, the effects of electric current on the microstructure and thermoelectric performance were investigated. This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of (Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 samples. When the current intensity was raised to 320 A/cm 2 , the preferred orientation of grains was observed. Moreover, positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed. An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm 2 , respectively. (semiconductor materials)

  19. Microstructure, mechanical properties, and thermoelectric properties of hot-extruded p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Park, K; Seo, J; Lee, C

    1997-07-01

    The p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds with Te dopant (4.0 and 6.0 wt%) and without dopant were fabricated by hot extrusion in the temperature range of 300 to 510 C under an extrusion ratio of 20:1. The undoped and Te doped compounds were highly dense and showed high crystalline quality. The grains contained many dislocations and were fine equiaxed ({approximately}1.0 {micro}m) owing to the dynamic recrystallization during the extrusion. The hot extrusion gave rise to the preferred orientation of grains. The bending strength and the figure of merit of the undoped and Te doped compounds were increased with increasing the extrusion temperature. The Te dopant significantly increased the figure of merit. The values of the figure of merit of the undoped and 4.0 wt% Te-doped compounds hot extruded at 440 C were 2.11 x 10{sup {minus}3}/K and 2.94 x 10{sup {minus}3}/K, respectively.

  20. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    Energy Technology Data Exchange (ETDEWEB)

    Guttmann, Gilad M. [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Dadon, David [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Gelbstein, Yaniv [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  1. Preparation and optimization of thermoelectric properties of Bi2Te3 based alloys using the waste particles as raw materials from the cutting process of the zone melting crystal rods

    Science.gov (United States)

    Xiang, Qiusheng; Fan, Xi'an; Han, Xuewu; Zhang, Chengcheng; Hu, Jie; Feng, Bo; Jiang, Chengpeng; Li, Guangqiang; Li, Yawei; He, Zhu

    2017-12-01

    The p-type Bi2Te3 alloys were prepared using the waste particles from the cutting process of the zone melting crystal rods as the main raw materials by impurity removal process including washing, carbon monoxide reduction and vacuum metallurgical process. The thermoelectric properties of the Bi2Te3 based bulk materials were optimized by component adjustment, second smelting and resistance pressing sintering (RPS) process. All evidences confirmed that most of impurities from the line cutting process and the oxidation such as Sb2O3, Bi2O3 and Bi2Te4O11 could be removed by carbon monoxide reduction and vacuum metallurgical process adopted in this work, and the recycling yield was higher than 97%. Appropriate component adjustment treatment was used to optimize the carrier content and corresponding thermoelectric properties. Lastly, a Bi0.36Sb1.64Te3 bulk was obtained and its power factor (PF) could reach 4.24 mW m-1 K-2 at 300 K and the average PF value was over 3.2 mW m-1 K-2 from 300 K to 470 K, which was equivalent with the thermoelectric performance of the zone melting products from high purity elements Bi, Te and Sb. It was worth mentioning that the recovery process introduced here was a simple, low-cost, high recovery rate and green recycling technology.

  2. Preparation, characterization and thermoelectric properties of a polyaniline matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Sude; Zeng, Hao; Zhang, Changxing; Liu, Chun; Xu, Qian [Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy; Zhang, Jianjun [Xihua Univ., Chengdu (China). School of Materials Science and Engineering

    2017-11-01

    In times of industrialization, much low temperature waste heat is released and no viable technology exists which can produce electricity from this low energy density heat. So the long sought-after class thermoelectric (TE) material which directly achieves conversion between thermal and electrical energy obtains much attention. However, the traditional TE materials are alloys of inorganic materials and expensive, and most of them have some level of toxicity, so the research on organic TE materials is very important. The polyaniline (PANI, i. e., a conducting polymer) and PANI matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite material were prepared. The chemical structure, microstructure and thermoelectric properties were investigated by FTIR, XRD, SEM and ZEM. Results showed that the molecule chains in the PANI were not ranged very neatly, and Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te in the composite material formed interconnected network as 20 wt.-% Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was added. Power factor of the composite material increased greatly while its ZT was almost two times of PANI. The addition of Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was an effective method to increase the thermoelectric properties of PANI.

  3. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  4. Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

    2006-01-01

    In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

  5. Synthesis and thermoelectric performance of a p-type Bi0.4Sb1.6Te3 material developed via mechanical alloying

    International Nuclear Information System (INIS)

    Jimenez, Sandra; Perez, Jose G.; Tritt, Terry M.; Zhu, Song; Sosa-Sanchez, Jose L.; Martinez-Juarez, Javier; López, Osvaldo

    2014-01-01

    Highlights: • This paper shows a Bi 1.6 Sb 0.4 Te 3 alloy prepared by MA-SPS process. • A ZT value of about 1.2–1.3 around 360 K was achieved for this compound. • The lower sintering process was carried out in a short time. • The resulting material has a very fine microstructure and high density. - Abstract: A p-type Bi 0.4 Sb 1.6 Te 3 thermoelectric compound was fabricated via mechanical alloying of bismuth, antimony and tellurium elemental powders as starting materials. The mechanically alloyed compositions were sintered through a spark-plasma sintering (SPS) process. The effect of the milling time was investigated. In order to characterize the powders obtained via mechanical alloying, X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis were used. The morphological evolution was studied by scanning electron microscopy (SEM). Results showed that the p-type Bi 0.4 Sb 1.6 Te 3 compound was formed after 2 h of milling. Further, the variation of milling time showed that the synthesized phase was stable. All the powders exhibit the same morphology albeit with slight differences. Measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity were performed in the temperature range 300–520 K for the SPS samples. The resulting thermoelectric figure of merit ZT reaches a maximum of 1.2 at 360 K for the p-type bulk material with a 5 h milling time. This study demonstrates the possibility of preparing thermoelectric materials of high performance and short processing time

  6. Electronic structure and transport in the low-temperature thermoelectric CsBi4Te6: Semiclassical transport equations

    DEFF Research Database (Denmark)

    Lykke, Lars; Iversen, Bo Brummerstedt; Madsen, Georg

    2006-01-01

    The band structure of the low-temperature thermoelectric material, CsBi4Te6, is calculated and analyzed using the semiclassic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties, a band gap of 0.08 eV must be enforced. A gap in reasonable...... agreement with experiment was obtained using the generalized gradient functional of Engel and Vosko [E. Engel and S. H. Vosko, Phys. Rev. B 47, 13164 (1993)]. We found that the experimental p-type sample has a carrier concentration close to optimal. Furthermore, the conduction bands have a form equally well...

  7. STM imaging of electronic waves on the surface of Bi2Te3: topologically protected surface states and hexagonal warping effects

    Energy Technology Data Exchange (ETDEWEB)

    Alpichshev, Zhanybek; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Analytis, J.G.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Chu, J.-H.; Fisher, I.R.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Chen, Y.L.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Shen, Z.X.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Fang, A.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Kapitulnik, A.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.

    2010-06-02

    Scanning tunneling spectroscopy studies on high-quality Bi{sub 2}Te{sub 3} crystals exhibit perfect correspondence to ARPES data, hence enabling identification of different regimes measured in the local density of states (LDOS). Oscillations of LDOS near a step are analyzed. Within the main part of the surface band oscillations are strongly damped, supporting the hypothesis of topological protec- tion. At higher energies, as the surface band becomes concave, oscillations appear which disperse with a particular wave-vector that may result from an unconventional hexagonal warping term.

  8. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  9. Synthesis, structural, thermal and optical properties of TeO2-Bi2O3-GeO2-Li2O glasses

    Science.gov (United States)

    Dimowa, Louiza; Piroeva, Iskra; Atanasova-Vladimirova, S.; Petrova, Nadia; Ganev, Valentin; Titorenkova, Rositsa; Yankov, Georgi; Petrov, Todor; Shivachev, Boris L.

    2016-10-01

    In this study, synthesis and characterization of novel quaternary tellurite glass system TeO2-Bi2O3-GeO2-Li2O is presented. The compositions include TeO2 and GeO2 as glass formers while different proportion of Bi2O3 and Li2O act as network modifiers. Differential thermal analysis, X-ray diffraction, scanning electron microscopy energy dispersive X-ray spectroscopy, laser ablation inductively coupled plasma mass spectrometry, UV-Vis and Raman spectroscopy are applied to study the structural, thermal and optical properties of the studied glasses. Obtained glasses possess a relatively low glass transition temperature (around 300 °C) if compared to other tellurite glasses, show good thermal transparency in the visible and near infra-red (from 2.4 to 0.4 μm) and can double the frequency of laser light from its original wavelength of 1064 nm to its second-harmonic at 532 nm (i.e. second harmonic generation).

  10. Thermal conductivity in Bi0.5Sb1.5Te3+x and the role of dense dislocation arrays at grain boundaries.

    Science.gov (United States)

    Deng, Rigui; Su, Xianli; Zheng, Zheng; Liu, Wei; Yan, Yonggao; Zhang, Qingjie; Dravid, Vinayak P; Uher, Ctirad; Kanatzidis, Mercouri G; Tang, Xinfeng

    2018-06-01

    Several prominent mechanisms for reduction in thermal conductivity have been shown in recent years to improve the figure of merit for thermoelectric materials. Such a mechanism is a hierarchical all-length-scale architecturing that recognizes the role of all microstructure elements, from atomic to nano to microscales, in reducing (lattice) thermal conductivity. In this context, there have been recent claims of remarkably low (lattice) thermal conductivity in Bi 0.5 Sb 1.5 Te 3 that are attributed to seemingly ordinary grain boundary dislocation networks. These high densities of dislocation networks in Bi 0.5 Sb 1.5 Te 3 were generated via unconventional materials processing with excess Te (which formed liquid phase, thereby facilitating sintering), followed by spark plasma sintering under pressure to squeeze out the liquid. We reproduced a practically identical microstructure, following practically identical processing strategies, but with noticeably different (higher) thermal conductivity than that claimed before. We show that the resultant microstructure is anisotropic, with notable difference of thermal and charge transport properties across and along two orthonormal directions, analogous to anisotropic crystals. Thus, we believe that grain boundary dislocation networks are not the primary cause of enhanced ZT through reduction in thermal conductivity. Instead, we can reproduce the purported high ZT through a favorable but impractical and incorrect combination of thermal conductivity measured along the pressing direction of anisotropy while charge transport measured in the direction perpendicular to the anisotropic direction. We believe that our work underscores the need for consistency in charge and thermal transport measurements for unified and verifiable measurements of thermoelectric (and related) properties and phenomena.

  11. The Au-Ag-Sb-Bi-Te mineralization from the deposit Bytíz (mine 19), the Příbram uranium-polymetallic ore discrit, Czech Republic

    Czech Academy of Sciences Publication Activity Database

    Litochleb, J.; Sejkora, J.; Šrein, Vladimír

    2006-01-01

    Roč. 28, Spec. pap. (2006), s. 133-135 ISSN 1896-2203. [Central European Mineralogical Conference /1./. Vyšná Boca, 11.09.2006-15.09.2006] Institutional research plan: CEZ:AV0Z30460519 Keywords : Au-Ag-Sb-Bi-Te * mineralization * uranium-polymetallic ore Subject RIV: DB - Geology ; Mineralogy

  12. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi{sub 2}Te{sub 3}) single crystals for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, Anuj [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Singh, Budhendra [TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro (Portugal); Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Maurya, K.K. [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2016-03-07

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi{sub 2}Te{sub 3}) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  13. Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

    2006-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

  14. Holographic recording and characterization of photorefractive Bi{sub 2}TeO{sub 5} crystals at 633 nm wavelength light

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Ivan de, E-mail: ivan@ft.unicamp.br [Grupo de Óptica e Modelagem Numérica (GOMNI)-Faculdade de Tecnologia/UNICAMP, Limeira-SP (Brazil); Carvalho, Jesiel F., E-mail: carvalho@if.ufg.br; Fabris, Zanine V. [Instituto de Física/Universidade Federal de Goiás, Goiânia-GO (Brazil); Frejlich, Jaime, E-mail: frejlich@ifi.unicamp.br [Instituto de Física “Gleb Wataghin”/UNICAMP, Campinas-SP (Brazil)

    2014-04-28

    We report on the holographic recording on photorefractive Bi{sub 2}TeO{sub 5} crystals using λ=633 nm wavelength light. We studied the behavior of this material under the action of this low photonic energy light and found out the presence of a fast and a slow hologram, both of photorefractive nature and exhibiting rather high diffraction efficiencies. The faster and the slower holograms are based on the excitation and diffusion of oppositely charged carriers (likely electrons and holes). Relevant parameters for the photoactive centers responsible for both kind of holograms were characterized using purely holographic techniques. No evidences of non-photosensitive ionic charge carriers being involved in the recording process at room temperature nor self-fixing effects were found.

  15. Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

    Science.gov (United States)

    Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae

    2017-12-01

    Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy ( V 3- In) and higher concentration of the V 3- In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V 3- In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

  16. Hydride generation atomic fluorescence spectrometric determination of As, Bi, Sb, Se(IV) and Te(IV) in aqua regia extracts from atmospheric particulate matter using multivariate optimization

    International Nuclear Information System (INIS)

    Moscoso-Perez, Carmen; Moreda-Pineiro, Jorge; Lopez-Mahia, Purificacion; Muniategui-Lorenzo, Soledad; Fernandez-Fernandez, Esther; Prada-Rodriguez, Dario

    2004-01-01

    A highly sensitive and simple method, based on hydride generation and atomic fluorescence detection, has been developed for the determination of As, Bi, Sb, Se(IV) and Te(IV) in aqua regia extracts from atmospheric particulate matter samples. Atmospheric particulates matter was collected on glass fiber filters using a medium volume sampler (PM1 particulate matter). Two-level factorial designs have been used to optimise the hydride generation atomic fluorescence spectrometry (HG-AFS) procedure. The effects of several parameters affecting the hydride generation efficiency (hydrochloric acid, sodium tetrahydroborate and potassium iodide concentrations and flow rates) have been evaluated using a Plackett-Burman experimental design. In addition, parameters affecting the hydride measurement (delay, analysis and memory times) have been also investigated. The significant parameters obtained (sodium tetrahydroborate concentration, sodium tetrahydroborate flow rate and analysis time for As; hydrochloric acid concentration and sodium tetrahydroborate flow rate for Se(IV); and sodium tetrahydroborate concentration and sodium tetrahydroborate flow rate for Te(IV)) have been optimized by using 2 n + star central composite design. Hydrochloric acid concentration and sodium tetrahydroborate flow rate were the significant parameters obtained for Sb and Bi determination, respectively. Using a univariate approach these parameters were optimized. The accuracy of methods have been verified by using several certified reference materials: SRM 1648 (urban particulate matter) and SRM 1649a (urban dust). Detection limits in the range of 6 x 10 -3 to 0.2 ng m -3 have been achieved. The developed methods were applied to several atmospheric particulate matter samples corresponding to A Coruna city (NW Spain)

  17. Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

    Science.gov (United States)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

    2017-04-01

    The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

  18. CEA/CD3-bispecific T cell-engaging (BiTE) antibody-mediated T lymphocyte cytotoxicity maximized by inhibition of both PD1 and PD-L1.

    Science.gov (United States)

    Osada, Takuya; Patel, Sandip P; Hammond, Scott A; Osada, Koya; Morse, Michael A; Lyerly, H Kim

    2015-06-01

    Bispecific T cell-engaging (BiTE) antibodies recruit polyclonal cytotoxic T cells (CTL) to tumors. One such antibody is carcinoembryonic antigen (CEA) BiTE that mediates T cell/tumor interaction by simultaneously binding CD3 expressed by T cells and CEA expressed by tumor cells. A widely operative mechanism for mitigating cytotoxic T cell-mediated killing is the interaction of tumor-expressed PD-L1 with T cell-expressed PD-1, which may be partly reversed by PD-1/PD-L1 blockade. We hypothesized that PD-1/PD-L1 blockade during BiTE-mediated T cell killing would enhance CTL function. Here, we determined the effects of PD-1 and PD-L1 blockade during initial T cell-mediated killing of CEA-expressing human tumor cell lines in vitro, as well as subsequent T cell-mediated killing by T lymphocytes that had participated in tumor cell killing. We observed a rapid upregulation of PD-1 expression and diminished cytolytic function of T cells after they had engaged in CEA BiTE-mediated killing of tumors. T cell cytolytic activity in vitro could be maximized by administration of anti-PD-1 or anti-PD-L1 antibodies alone or in combination if applied prior to a round of T cell killing, but T cell inhibition could not be fully reversed by this blockade once the T cells had killed tumor. In conclusion, our findings demonstrate that dual blockade of PD-1 and PD-L1 maximizes T cell killing of tumor directed by CEA BiTE in vitro, is more effective if applied early, and provides a rationale for clinical use.

  19. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  20. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

    International Nuclear Information System (INIS)

    Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-01-01

    A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

  1. Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Chang-Yu; Wei, Ming-Fang [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Geng, Lei, E-mail: lgeng.cn@gmail.com [Department of Materials Science and Engineering, Huaibei Normal University, Huaibei, Anhui 235000 (China); Hu, Pei-Qing; Yu, Meng-Xia [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Cheng, Wen-Dan [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

    2016-07-15

    Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetric building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were firstly

  2. Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

    Directory of Open Access Journals (Sweden)

    Viktoriia Ohorodniichuk

    2017-06-01

    Full Text Available Melt-spinning (MS has been reported as a promising tool to tailor the microstructure of bulk thermoelectric materials leading to enhanced thermoelectric performances. Here, we report on a detailed characterization of p-type Bi0.48Sb1.52Te3 ribbons produced by melt-spinning. The microstructure of the melt-spun ribbons has been studied by means of X-ray diffraction, scanning and transmission electron microscopy (TEM. The analyses indicate that the ribbons are highly-textured with a very good chemical homogeneity. TEM reveals clear differences in the microstructure at large and short-range scales between the surface that was in contact with the copper wheel and the free surface. These analyses further evidence the absence of amorphous regions in the melt-spun ribbons and the precipitation of elemental Te at the grain boundaries. Low-temperature electrical resistivity and thermopower measurements (20–300 K carried out on several randomly-selected ribbons confirm the excellent reproducibility of the MS process. However, the comparison of the transport properties of the ribbons with those of bulk polycrystalline samples of the same initial composition shows that MS leads to a more pronounced metallic character. This difference is likely tied to changes in deviations from stoichiometry due to the out-of-equilibrium conditions imposed by MS.

  3. Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

    Institute of Scientific and Technical Information of China (English)

    Ping Zou; Guiying Xun; Song Wang; Penglei Chen; Fengzhu Huang

    2014-01-01

    Bi2Te2.7Se0.3 of high performance doped with Gd bulk materials was prepared by a high pressure (6.0 GPa) sintering (HPS) method at 593 K, 633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85%at 423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.

  4. Heat Treatment Effect on Eu3+ Doped TeO2-BaO-Bi2O3 Glass Systems with Ag Nanoparticles

    Directory of Open Access Journals (Sweden)

    Tomasz Lewandowski

    2017-01-01

    Full Text Available Glass systems of 73TeO2-4BaO-3Bi2O3-2Eu2O3-xAg (in molar ratio where x = 0, 1, 2, and 3 compositions have been successfully synthesized. Silver nanoparticles were obtained with the employment of heat treatment (HT procedure executed at 350°C. Glass transition temperatures of different compositions have been determined through DSC measurements. XRD results presented characteristic amorphous halo indicating lack of long range order in the samples. FTIR structural studies revealed that glass matrix is mainly composed of TeO3 and TeO4 species and is stable after different applied heat treatment times. X-ray photoelectron spectroscopy (XPS measurements confirmed that in selected samples part of Ag ions changed oxidation state to form Ag0 species. TEM measurements revealed nanoparticles of size in the range of 20–40 nm. UV-vis absorption results demonstrated characteristic transitions of Eu3+ ions. Additionally, UV-vis spectra of samples heat-treated for 6, 12, 24, and 48 hours presented bands related to silver nanoparticles. Photoluminescence (PL studies have been performed with excitation wavelength of λexc=395 nm. Obtained spectra exhibited peaks due to 5D0-7FJ (where J=2,3,4 and 5D1-7FJ (where J=1,2,3 transitions of Eu3+. Moreover, luminescence measurement indicated enhancement of rare earth ions emissions in several of the annealed samples. Increase of emission intensity of about 35% has been observed.

  5. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  6. Performance of a Composite Thermoelectric Generator with Different Arrangements of SiGe, BiTe and PbTe under Different Configurations

    Directory of Open Access Journals (Sweden)

    Alexander Vargas-Almeida

    2015-10-01

    Full Text Available In this study, we analyze the role of the thermoelectric (TE properties, namely Seebeck coefficient α, thermal conductivity κ and electrical resistivity ρ, of three different materials in a composite thermoelectric generator (CTEG under different configurations. The CTEG is composed of three thermoelectric modules (TEMs: (1 two TEMs thermally and electrically connected in series (SC; (2 two branches of TEMs thermally and electrically connected in parallel (PSC; and (3 three TEMs thermally and electrically connected in parallel (TEP. In general, each of the TEMs have different thermoelectric parameters, namely a Seebeck coefficient α, a thermal conductance K and an electrical resistance R. Following the framework proposed recently, we show the effect of: (1 the configuration; and (2 the arrangements of TE materials on the corresponding equivalent figure of merit Zeq and consequently on the maximum power Pmax and efficiency η of the CTEG. Firstly, we consider that the whole system is formed of the same thermoelectric material (α1,K1,R1 = α2,K2,R2 = α3,K3,R3 and, secondly, that the whole system is constituted by only two different thermoelectric materials Entropy 2015, 17 7388 (αi,Ki,Ri ≠ αj ,Kj ,Rj 6= αl,Kl,Rl, where i, j, l can be 1, 2 or 3. In this work, we propose arrangements of TEMs, which clearly have the advantage of a higher thermoelectric figure of merit value compared to a conventional thermoelectric module. A corollary about the Zeq-max for CTEG is obtained as a result of these considerations. We suggest an optimum configuration.

  7. Facile fabrication of core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods: Enhanced photoluminescence through electron charge

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Shengfei; Gao, Hongli [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Deng, Yuan, E-mail: dengyuan@buaa.edu.cn [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Wang, Yao [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2016-01-15

    Graphical abstract: - Highlights: • The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells prepared by combining a facile hydrothermal growth and magnetron sputtering approach. • The light absorption and photoluminescence emission of the ZnO and the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells are investigated. • The core–shell structure reveals a simultaneous novelty enhancement of the photoluminescence emission in the UV and visible range. • The mechanism for the PL simultaneous enhancement is described. - Abstract: Surface decoration techniques are emerging as promising strategy to improve the optical properties of the ZnO based materials. The core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods were grown on a FTO substrate through a facile hydrothermal and magnetron sputtering combined approach. The microstructure of the core–shell nanorod arrays were investigated by the X-ray diffraction (XRD), a field emission Scanning electron microscopy (SEM) and high resolution transmission electron microscope (HTEM). The optical properties of the core–shell nanorod arrays were investigated through the diffuse reflectance absorption spectra and photoluminescence emission. The visible light absorption and especially the photoluminescence emission of the ZnO nanorods are enhanced markedly with the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} grains coating the ZnO nanorods through the electron charge.

  8. Fabrication and Enhanced Thermoelectric Properties of Alumina Nanoparticle-Dispersed Bi0.5Sb1.5Te3 Matrix Composites

    Directory of Open Access Journals (Sweden)

    Kyung Tae Kim

    2013-01-01

    Full Text Available Alumina nanoparticle-dispersed bismuth-antimony-tellurium matrix (Al2O3/BST composite powders were fabricated by using ball milling process of alumina nanoparticle about 10 nm and p-type bismuth telluride nanopowders prepared from the mechanochemical process (MCP. The fabricated Al2O3/BST composite powders were a few hundreds of nanometer in size, with a clear Bi0.5Sb1.5Te3 phase. The composite powders were consolidated into p-type bulk composite by spark plasma sintering process. High-resolution TEM images reveal that alumina nanoparticles were dispersed among the grain boundary or in the matrix grain. The sintered 0.3 vol.% Al2O3/BST composite exhibited significantly improved power factor and reduced thermal conductivity in the temperature ranging from 293 to 473 K compared to those of pure BST. From these results, the highly increased ZT value of 1.5 was obtained from 0.3 vol.% Al2O3/BST composite at 323 K.

  9. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

    Science.gov (United States)

    Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

    2017-05-01

    Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

  10. Growth of niobium on the three-dimensional topological insulator Bi{sub 2}Te{sub 1.95}Se{sub 1.05}

    Energy Technology Data Exchange (ETDEWEB)

    Meixner, Philipp [Novel Materials Group, Humboldt-Universität zu Berlin, 12489 Berlin (Germany); Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lim, Seong Joon [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Park, Joonbum; Kim, Jun Sung [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Fischer, Saskia F. [Novel Materials Group, Humboldt-Universität zu Berlin, 12489 Berlin (Germany); Seo, Jungpil [NANOSPM Lab, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873 (Korea, Republic of); Kuk, Young [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2016-01-15

    Graphical abstract: - Highlights: • We grew niobium on topological insulator at different substrate temperatures. • Local density of states is modified by deposited Nb islands. • We found a downward shift of the Dirac point, since niobium acts as a donor. • Nb grew in layer-by-layer growth mode up to an annealing temperature of 450 °C. • We applied a new cleaving method allowing for sample heating of flux-grown TI. - Abstract: While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi{sub 2}Te{sub 1.95}Se{sub 1.05} by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C.

  11. The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi2Te2.7Se0.3 matrix composites

    Science.gov (United States)

    Min, Tae Sik; Kim, Kyung Tae; Son, Injoon

    2017-09-01

    Nanodiamond-dispersed Bi2Te2.7Se0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.

  12. Structural stability of ternary C22–Zr6X2Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr6Sn2T′ (T′=Fe, Co, Ni, Cu) compounds

    International Nuclear Information System (INIS)

    Colinet, Catherine; Crivello, Jean-Claude; Tedenac, Jean-Claude

    2013-01-01

    The crystal and electronic structures, and the thermodynamic properties of Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe 2 P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr 6 Sb 2 Co compound. Display Omitted - Highlights: • Structural stability of Zr 6 X 2 T′ compounds (X: p element, T′: late transition metal) in the Fe 2 P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

  13. Amorphous-to-crystalline transition in Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} phase-change materials for data recording

    Energy Technology Data Exchange (ETDEWEB)

    Svoboda, Roman, E-mail: roman.svoboda@upce.cz [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Karabyn, Vasyl [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Málek, Jiří [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Frumar, Miloslav [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Beneš, Ludvík; Vlček, Milan [Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic v.v.i. and the University of Pardubice 532 10 Pardubice (Czech Republic)

    2016-07-25

    Structural and thermokinetic analyses were used to study the crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11}thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb→Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion – the results provided by this criterion showed that the highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices. - Highlights: • Crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} thin films was studied by DSC. • Sb → Bi substitution leads to a decrease of crystallization enthalpy and activation energy. • All compositions exhibited very similar transformation kinetics. • Rapidity of the crystallization process was quantified for the studied compositions. • Highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition.

  14. Investigation of radiation shielding properties for MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses

    Science.gov (United States)

    Sayyed, M. I.; Çelikbilek Ersundu, M.; Ersundu, A. E.; Lakshminarayana, G.; Kostka, P.

    2018-03-01

    In this work, glasses in the MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) system, which show a great potential for optoelectronic applications, were used to evaluate their resistance under high energy ionizing radiations. The basic shielding quantities for determining the penetration of radiation in glass, such as mass attenuation coefficient (μ/ρ), half value layer (HVL), mean free path (MFP) and exposure buildup factor (EBF) values were investigated within the energy range 0.015 MeV ‒ 15 MeV using XCOM program and variation of shielding parameters were compared with different glass systems and ordinary concrete. From the derived results, it was determined that MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses show great potentiality to be used under high energy radiations. Among the studied glass compositions, Bi2O3 and WO3 containing glasses were found to possess superior gamma-ray shielding effectiveness.

  15. Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

    KAUST Repository

    Edhaim, Fatimah; Rothenberger, Alexander

    2017-01-01

    Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black

  16. Dispersion and guidance characteristics of microstructured 68TeO2 - 22WO3 - 8La2O3 - 2Bi2O3 glass fibres for supercontinuum generation

    International Nuclear Information System (INIS)

    Yatsenko, Yu P; Nazaryants, V O; Kosolapov, A F; Astapovich, M S; Plotnichenko, V G; Dianov, Evgenii M; Moiseev, A N; Churbanov, M F; Dorofeev, V V; Chilyasov, A V; Snopatin, G E

    2010-01-01

    We report the preparation of a high-purity optical-quality four-component glass of composition 68TeO 2 - 22WO 3 - 8La 2 O 3 - 2Bi 2 O 3 , containing (2.7±0.5)x10 -5 mol % OH groups. Its refractive index has been determined in the range 0.9 - 5.45 μm using interference refractometry. The data are used to assess the dispersion and guidance characteristics of microstructured optical fibres potentially attractive for supercontinuum generation in the range 1 - 5 μm (optical fibres)

  17. Effect of spark plasma sintering conditions on the thermoelectric properties of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Sang-Soon [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Ju-Heon [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kwon, Beomjin; Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Ki-Suk; Baik, Jeong Min [School of Materials and Science Engineering, UNIST, Ulsan 689-798 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Choi, Won Jun [Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Dong-Ik [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hyun, Dow-Bin; Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Baek, Seung-Hyub, E-mail: shbaek77@kist.re.kr [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2016-09-05

    As a field-assisted technique, spark plasma sintering (SPS) enables densification of specimens in a very short period of time compared to other sintering techniques. For high performance thermoelectric material synthesis, SPS is widely used to fabricate nanograin-structured thermoelectric materials by rapidly densifying the nanopowders suppressing grain growth. However, the microstructural evolution behavior of thermoelectric materials by SPS, another important process during sintering, has been rarely studied. Here, we explore SPS as a tool to control the microstructure by long-time SPS. Using p-type (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} thermoelectric materials as a model system, we systematically vary SPS temperature and time to understand the correlations between SPS conditions, microstructural evolution, and the thermoelectric properties. Our results show that the relatively low eutectic temperature (∼420 °C) and the existence of volatile tellurium (Te) are critical factors to determine both microstructure and thermoelectric property. In the liquid-phase sintering regime, rapid evaporation of Te leads to a strong dependence of thermoelectric property on SPS time. On the other hand, in the solid-phase sintering regime, there is a weak dependence on SPS time. The optimum thermoelectric figure-of-merit (Z) of 2.93 × 10{sup −3}/K is achieved by SPS at 500 °C for 30 min. Our results will provide an insight on the optimization of SPS conditions for materials containing volatile elements with low eutectic temperature. - Highlights: • Spark plasma sintering (SPS) is used to synthesize the thermoelectric (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3}. • Liquid phase and volatile element are a key for the microstructure and thermoelectric property. • Thermoelectric figure-of-merit of 2.9 × 10{sup −3}/K is achieved at 500 °C for 30 min.

  18. Thermoelectric and Transport Properties of N-Type Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} Solid Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Eum, A-Young; Kim, Il-Ho [Korea National University of Transportation, Chungju (Korea, Republic of)

    2017-03-15

    Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} (x = 0.1, 0.2 and y = 0.15, 0.3) solid solutions were prepared using encapsulated melting and hot pressing. The lattice constants decreased with increases in the Sb and the Se contents, which revealed the successful formation of solid solutions. The relative densities of the hot-pressed specimens were 95 - 98%. All specimens exhibited n-type conduction at temperatures from 323 K to 523 K, and the electrical conductivity slightly decreased with increasing temperature. With an increase in the Se content, the Seebeck coefficient increased while the electrical and the thermal conductivities decreased; thus, the dimensionless figure of merit could be improved. The maximum dimensionless figure of merit ZT{sub max} = 0.89 was obtained at 423 K for Bi{sub 1.8}Sb{sub 0.2}Te{sub 2.7}Se{sub 0.3}. An increase in the Sb content resulted in a decrease in the lattice thermal conductivity because of an increase in alloy scattering, but its effect on the electrical properties was not superior to the effect of Se substitution. Therefore, Sb substitution could effectively control the thermal properties while Se substitution could effectively control the electrical properties.

  19. Highly porous thermoelectric nanocomposites with low thermal conductivity and high figure of merit from large-scale solution-synthesized Bi{sub 2}Te{sub 2.5}Se{sub 0.5} hollow nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Biao; Wu, Yue [Department of Chemical and Biological Engineering, Iowa State University, Ames, IA (United States); Ames Laboratory, Department of Energy, Ames, IA (United States); Feng, Tianli; Ruan, Xiulin [Department of Mechanical Engineering, Purdue University, West Lafayette, IN (United States); Agne, Matthias T.; Snyder, G. Jeffery [Department of Materials Science and Engineering, Northwestern University, Evanston, IL (United States); Zhou, Lin [Ames Laboratory, Department of Energy, Ames, IA (United States)

    2017-03-20

    To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ) and excellent figure of merit (z T). Herein we report a scalable (ca. 11.0 g per batch) and low-temperature colloidal processing route for Bi{sub 2}Te{sub 2.5}Se{sub 0.5} hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm x h 10 mm) with low κ (0.48 W m{sup -1} K{sup -1}) and the highest z T (1.18) among state-of-the-art Bi{sub 2}Te{sub 3-x}Se{sub x} materials. Additional benefits of the unprecedented low relative density (68-77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase-transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. High absorption coefficients of the CuSb(Se,Te2 and CuBi(S,Se2 alloys enable high-efficient 100 nm thin-film photovoltaics

    Directory of Open Access Journals (Sweden)

    Chen Rongzhen

    2017-01-01

    Full Text Available We demonstrate that the band-gap energies Eg of CuSb(Se,Te2 and CuBi(S,Se2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω for CuSb(Se1−xTex2 is at ħω = Eg + 1 eV as much as 5–7 times larger than α(ω for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 − 150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

  1. High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

    Science.gov (United States)

    Chen, Rongzhen; Persson, Clas

    2017-06-01

    We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

  2. Enhanced thermoelectric properties in p-type Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy by combining incorporation and doping using multi-scale CuAlO{sub 2} particles

    Energy Technology Data Exchange (ETDEWEB)

    Song, Zijun; Liu, Yuan; Zhou, Zhenxing; Lu, Xiaofang; Wang, Lianjun [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); Zhang, Qihao [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); University of Chinese Academy of Sciences, Beijing (China); Jiang, Wan [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen (China); Chen, Lidong [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China)

    2017-01-15

    Multi-scale CuAlO{sub 2} particles are introduced into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix to synergistically optimize the electrical conductivity, Seebeck coefficient, and the lattice thermal conductivity. Cu element originating from fine CuAlO{sub 2} grains diffuses into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix and tunes the carrier concentration while the coarse CuAlO{sub 2} particles survive as the second phase within the matrix. The power factor is improved at the whole temperatures range due to the low-energy electron filtering effect on Seebeck coefficient and enhanced electrical transport property by mild Cu doping. Meanwhile, the remaining CuAlO{sub 2} inclusions give rise to more boundaries and newly built interfaces scattering of heat-carrying phonons, resulting in the reduced lattice thermal conductivity. Consequently, the maximum ZT is found to be enhanced by 150% arising from the multi-scale microstructure regulation when the CuAlO{sub 2} content reaches 0.6 vol.%. Not only that, but the ZT curves get flat in the whole temperature range after introducing the multi-scale CuAlO{sub 2} particles, which leads to a remarkable increase in the average ZT. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

    2016-04-15

    Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

  4. Characterization of the Structural Modulations in n-type Bi{sub 2} (Te{sub 0}.95Se{sub 0}.05){sub 3} Thermoelectric Compound

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sung Ho; Lee, Kap Ho [Chungnam National University, Daejeon (Korea, Republic of); Hong, Soon Jik [Kongju National University, Cheonan (Korea, Republic of)

    2015-02-15

    An n-type Bi{sub 2}Te{sub 3} thermoelectric compound was analyzed by using a high resolution transmission electron microscopy, and was further analyzed by using an image processing unit. A sinusoidal strain contrast of the structural modulations appeared in a multi-beam image and the fringes showed a wavelength of 12 nm with a wave vector parallel to the {101‾ 10} planes. A numerous dislocations were found to glide on to the (0001) plane with a Burgers vector of 1/3<21‾1‾0>-type on the strain field. In order for the elastic strain energy to be relieved, the resultant 1/3<21‾ 1‾0>-type dislocation was thought to be dissociated into two partial dislocations gliding on the {1‾015} planes. The variation in stacking periodicity of the 5-layers lamellar structure with respect to the basal plane of Bi{sub 2}Te{sub 3} was also observed locally. However, this stacking variation is not responsible for the formation of structural modulations. The displacement of the sinusoidal strain field on the structural modulations seems to be generated by dislocation, with presence of dipoles that are about a few nanometers apart. It is understandable that phonons should be scattered throughout the strain field of the structural modulation. Hence, the lattice thermal conductivity is expected to be decreased due to the phonon scattering on sinusoidal strain field of the structural modulations.

  5. Thermoelectric properties of unoxidized graphene/Bi{sub 2}Te{sub 2.7}Se{sub 0.3} composites synthesized by exfoliation/re-assembly method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Il; Lee, Eun Sil; Kim, Jong-Young [Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Gyeonggi-do (Korea, Republic of); Choi, Soon-Mok [School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan (Korea, Republic of); Lee, Kyu Hyoung [Materials R and D Center, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Won-Seon [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul (Korea, Republic of)

    2014-04-15

    Nanocomposites of n-type thermoelectric Bi{sub 2}Te{sub 2.7}Se{sub 0.3} (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscroll-type crystals by chemical exfoliation, and were re-assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark-plasma-sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS-US and UG/BTS-EX composites were ∝0.8 at the UG concentration of 0.05 wt%. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Nd{sup 3+}-doped TeO{sub 2}-Bi{sub 2}O{sub 3}-ZnO transparent glass ceramics for laser application at 1.06 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian [Central South of University, School of Materials Science and Engineering, Changsha (China)

    2017-04-15

    The high crystallinity transparent glass ceramics based on Nd{sup 3+}-doped 70TeO{sub 2}-15Bi{sub 2}O{sub 3}-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd{sub 2}O{sub 3} content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd{sub 2}O{sub 3} enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi{sub 2}Te{sub 4}O{sub 11} in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd{sub 2}O{sub 3} content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd{sub 2}O{sub 3} content due to the obvious energy migration among Nd{sup 3+}. According to the extreme strong emission band around 1062 nm and the optimum Nd{sub 2}O{sub 3} content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications. (orig.)

  7. A new indicator mineral methodology based on a generic Bi-Pb-Te-S mineral inclusion signature in detrital gold from porphyry and low/intermediate sulfidation epithermal environments in Yukon Territory, Canada

    Science.gov (United States)

    Chapman, R. J.; Allan, M. M.; Mortensen, J. K.; Wrighton, T. M.; Grimshaw, M. R.

    2017-12-01

    Porphyry-epithermal and orogenic gold are two of the most important styles of gold-bearing mineralization within orogenic belts. Populations of detrital gold resulting from bulk erosion of such regions may exhibit a compositional continuum wherein Ag, Cu, and Hg in the gold alloy may vary across the full range exhibited by natural gold. This paper describes a new methodology whereby orogenic and porphyry-epithermal gold may be distinguished according to the mineralogy of microscopic inclusions observed within detrital gold particles. A total of 1459 gold grains from hypogene, eluvial, and placer environments around calc-alkaline porphyry deposits in Yukon (Nucleus-Revenue, Casino, Sonora Gulch, and Cyprus-Klaza) have been characterized in terms of their alloy compositions (Au, Ag, Cu, and Hg) and their inclusion mineralogy. Despite differences in the evolution of the different magmatic hydrothermal systems, the gold exhibits a clear Bi-Pb-Te-S mineralogy in the inclusion suite, a signature which is either extremely weak or (most commonly) absent in both Yukon orogenic gold and gold from orogenic settings worldwide. Generic systematic compositional changes in ore mineralogy previously identified across the porphyry-epithermal transition have been identified in the corresponding inclusion suites observed in samples from Yukon. However, the Bi-Te association repeatedly observed in gold from the porphyry mineralization persists into the epithermal environment. Ranges of P-T-X conditions are replicated in the geological environments which define generic styles of mineralization. These parameters influence both gold alloy composition and ore mineralogy, of which inclusion suites are a manifestation. Consequently, we propose that this methodology approach can underpin a widely applicable indicator methodology based on detrital gold.

  8. Thermal characteristics, Raman spectra, optical and structural properties of TiO2-Bi2O3-B2O3-TeO2 glasses

    Science.gov (United States)

    Gupta, Nupur; Khanna, Atul; Gonzàlez, Fernando; Iordanova, Reni

    2017-05-01

    Tellurite and borotellurite glasses containing Bi2O3 and TiO2 were prepared and structure-property correlations were carried out by density measurements, X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Raman and UV-visible spectroscopy. Titanium tellurite glasses require high melt-cooling rates and were fabricated by splat quenching. On adding B2O3, the glass forming ability (GFA) enhances, and glasses could be synthesized at lower quenching rates. The density of glasses shows a direct correlation with molecular mass of the constituents. UV-visible studies were used to determine the optical band gap and refractive index. Raman studies found that the co-ordination number of tellurium ions with oxygen (NTe-O) decreases with the increase in B2O3 as well as Bi2O3 content while, TiO2 produce only a small decrease in NTe-O, which explains the lower GFA of titanium tellurite glasses that do not contain Bi2O3 and B2O3. DSC studies show that the glass transition temperature (Tg) increases with B2O3 and TiO2 concentrations and that Tg correlates well with bond enthalpy of the metal oxides.

  9. Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

    KAUST Repository

    Edhaim, Fatimah

    2017-12-21

    Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black gels produced porous materials with BET surface areas of 230 m2/g (KCrBiTe3), 450 m2/g (KZnBiTe3) and 514 m2/g (KFeBiTe3). The adsorption properties of the resulting chalcogenide aerogels or chalcogels have been studied using volatile organic hydrocarbons (VOCs) and gases as adsorptives. The results show preferential adsorption of toluene vapor over cyclohexane vapor. The adsorption capacity toward toluene is 5.02 mmol/g for KCrBiTe3, 5.58 mmol/g for KZnBiTe3 and 7.89 mmol/g for KFeBiTe3. Preferential adsorption of CO2 over CH4 or H2 was observed for the chalcogels: KCrBiTe3 (CO2/H2: 175, CO2/CH4: 50), KZnBiTe3 (CO2/H2: 180 and CO2/CH4: 60) and KFeBiTe3 (CO2/H2: 225 and CO2/CH4: 65).

  10. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    Science.gov (United States)

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  11. Structural and luminescent study of TeO2-BaO-Bi2O3-Ag glass system doped with Eu3+ and Dy3+ for possible color-tunable phosphor application

    Science.gov (United States)

    Lewandowski, Tomasz; Seweryński, Cezary; Walas, Michalina; Łapiński, Marcin; Synak, Anna; Sadowski, Wojciech; Kościelska, Barbara

    2018-05-01

    Tellurite glass systems of 73TeO2-4BaO-3Bi2O3-1Ag:xEu2O3-(2-x)Dy2O3 (where x = 0.5, 1, 1.5, 2 in molar ratio) composition have been successfully synthesized. In order to acquire Ag nanoparticles, materials have been heat treated at 350 °C in the air atmosphere. Structural properties of obtained samples were evaluated with various techniques. X-Ray Diffraction (XRD) measurements indicated that obtained materials are amorphous in nature. UV-vis results presented transitions characteristic to Dy3+ and Eu3+ ions. Additionally, X-Ray Photoelectron Spectroscopy (XPS) analysis indicated the presence of silver in metallic form. Photoluminescence measurements shown influence of Ag nanoparticles on emission characteristics. Simultaneous emission of Dy3+ and Eu3+ has been observed when samples were excited with λexc = 390 nm. Change of the emission color induced by heat treatment has been observed and described in case of x = 1 glass series. According to CIE results emission color changes as Eu/Dy ratio and heat treatment time are changed. Emission shifts from reddish-orange to yellowish white color. Obtained photoluminescence results confirm that synthesized materials are good candidates for color tunable phosphors.

  12. Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

    Energy Technology Data Exchange (ETDEWEB)

    Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Schmitz, Andreas [Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany); Hartung, David; Klar, Peter J. [Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Dankwort, Torben; Kienle, Lorenz [Institute for Material Science, Christian-Albrechts-University, Kaiserstrasse 2, D-24143 Kiel (Germany); Mueller, Eckhard, E-mail: Eckhard.Mueller@dlr.de [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany)

    2016-06-07

    We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Room temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.

  13. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

    Science.gov (United States)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J L; Zhong, Ruidan; Schneeloch, John A; Liu, Tiansheng; Valla, Tonica; Tranquada, John M; Gu, Genda; Davis, J C Séamus

    2015-02-03

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  14. Structural stability of ternary C22–Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Colinet, Catherine, E-mail: ccolinet@simap.grenoble-inp.fr [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères, Cedex (France); Crivello, Jean-Claude [ICMPE-CMTR, CNRS UMR-7182, 2-8 rue Henri Dunant, 94320 Thiais (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)

    2013-09-15

    The crystal and electronic structures, and the thermodynamic properties of Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe{sub 2}P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr{sub 6}Sb{sub 2}Co compound. Display Omitted - Highlights: • Structural stability of Zr{sub 6}X{sub 2}T′ compounds (X: p element, T′: late transition metal) in the Fe{sub 2}P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

  15. Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

    International Nuclear Information System (INIS)

    Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

    1992-01-01

    ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

  16. Selenium Se and tellurium Te

    International Nuclear Information System (INIS)

    Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

    1978-01-01

    The basic methods for determining selenium and tellurium in various objects are presented. The bichromatometric determination of Te in cadmium, zinc and mercury tellurides is based on oxidation of Te(4) to (6) in H 2 SO 4 with potassium bichromate. In steels, Te is determined photometrically with the aid of KI. The determination is hindered by Fe(3), Cu(2), Bi(3) and Se(4) ions, which must be separated. The extraction-photometric determination of Te in native sulfur is carried out with the aid of 5-mercapto-3-(naphthyl-2)-1,3,4-thiadiazolthione-2 (pH=4.8-5.0). The dyed complex is readily extracted with chloroform and benzene. The spectrophotometric determination of Te in selenium is performed with the aid of 3,5-diphenylpyrazoline-1-dithiocarbamate of sodium. Te is determined in commercial indium, arsenic and their semiconductor compounds photometrically with the aid of copper diethyldithiocarbamate. The method permits determining 5x10 -5 % Te in a weighed amount of 0.5 g. The chloride complex of Te(4) with diantipyriodolpropylmethane is quantitatively extracted with dichloroethane from hydrochloric acid solutions. Thus, any amounts of Te can be separated from Se and determined photometrically. The extraction-photometric determination of Te in commercial lead and bismuth is carried out with the aid of pyrazolone derivatives, in commercial copper with the aid of diantipyridolpropylmethane, and in ores (more than 0.01% Te) with the aid of bismuthol 2. Also described is the extraction-polarographic determination of Te in sulfide ores

  17. Structural and optical investigation of Te-based chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

    2015-05-15

    We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

  18. The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

    Science.gov (United States)

    Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

    2018-02-01

    Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

  19. Bi-Force

    DEFF Research Database (Denmark)

    Sun, Peng; Speicher, Nora K; Röttger, Richard

    2014-01-01

    of pairwise similarities. We first evaluated the power of Bi-Force to solve dedicated bicluster editing problems by comparing Bi-Force with two existing algorithms in the BiCluE software package. We then followed a biclustering evaluation protocol in a recent review paper from Eren et al. (2013) (A...... comparative analysis of biclustering algorithms for gene expressiondata. Brief. Bioinform., 14:279-292.) and compared Bi-Force against eight existing tools: FABIA, QUBIC, Cheng and Church, Plaid, BiMax, Spectral, xMOTIFs and ISA. To this end, a suite of synthetic datasets as well as nine large gene expression...

  20. Effet du nombre de recyclages de la biomasse de Saccharomyces uvarum sur quelques paramètres de la fermentation primaire au cours de la production de la bière en Côte d'Ivoire

    Directory of Open Access Journals (Sweden)

    Zebre, AC.

    2011-01-01

    Full Text Available Effect of the number of recycled biomass of the yeast Saccharomyces uvarum on some parameters of primary fermentation during beer production in Côte d'Ivoire. A study was conducted on the yeast Saccharomyces uvarum during the production of beer to determine the impact of the number of recycled yeast biomass on some primary fermentation parameters and to understand variations during primary fermentation time. The work was carried out with six cycles of beer production. The first cycle was done with the initial culture of S. uvarum and the five others with its recycled biomass. After each cycle of production, the yeast biomass obtained is re-used to inoculate another mash and the same operation was repeated until the sixth cycle of production of the beer. Thus during each of the six cycles, several parameters such as the rate of fermentation, the diacetyle reduction time, the rate of alcohol production, etc. were measured. The fifth and sixth cycles showed the longest primary fermentation time (10 days and the longest diacetyle reduction time (6.8 and 7.6 days respectively. The first and second cycles have the shortest primary fermentation time (8.33 and 8.25 days respectively and diacetyle reduction time (3.33 days for each cycle. The interval between the theoretical and the practical attenuation limit differs according to the cycle of production. The highest gap (0.51 was obtained with the last cycle (sixth while the shortest was obtained with the first cycle, 0.13. The fermentation rate varied from 1.71 to 1.97°P per day. The quantity of sugar consumed varied from 8.83 to 10.70°P and the rate of alcohol produced from 4.56 to 4.90°P. The yeast from the two last cycles flocculated quicker than the others. The number of cells in suspension for these cycles was 4.1.106 and 4.2.106 cells.ml-1 respectively versus 25.106 and 20.106 cells.ml-1 respectively for the two first cycles. The yeast biomass from the first four cycles should be used for the

  1. Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

    International Nuclear Information System (INIS)

    Li Long-Long; Xu Wen

    2015-01-01

    We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

  2. Bi209 alpha activity

    International Nuclear Information System (INIS)

    Araujo Penna, M.M. de.

    1970-01-01

    The study for measuring Bi 209 alpha activity is presented. Ilford L4 nuclear emulsion pellicles loaded with bismuth citrate to obtain a load of 100 mg/cm 3 of dry emulsion, were prepared. Other pellicles were prepared with the same. Ilford L4 gel to estimate the background radiation. To observe 'fading' effect, pellicles loaded with bismuth were submitted to neutrons of high energy, aiming to record recoil proton tracks. The pellicles were confined in nitrogen atmosphere at temperature lower than -10 0 C. The Bi 209 experimental half-life was obtained and compared with the estimated theoretical data. (M.C.K.) [pt

  3. State diagram of Pr-Bi system

    International Nuclear Information System (INIS)

    Abulkhaev, V.L.; Ganiev, I.N.

    1994-01-01

    By means of thermal differential analysis, X-ray and microstructural analysis the state diagram of Pr-Bi system was studied. Following intermetallic compounds were defined in the system: Pr 2 Bi, Pr 5 Bi 3 , Pr 4 Bi 3 , Pr Bi, PrBi 2 , Pr 2 Bi, Pr 5 Bi 3 , Pr 4 Bi 3 and PrBi 2 . The data analysis on Ln-Bi diagram allowed to determine the regularity of change of properties of intermetallic compounds in the line of rare earth elements of cerium subgroup.

  4. Global EiBI-monopole

    Directory of Open Access Journals (Sweden)

    JIN Xinghua

    2014-04-01

    Full Text Available A global EiBI-monopole problem is studied under EiBI gravitational theory.The equations of global EiBI-monopole are derived in the curved spacetime and the relation between the spacetime metric and auxiliary metric is found.In the case of a very small parameter,an asymptotic form of equations is given.The series solutions of global EiBI-monopole at infinity are found.

  5. Sorghum bi-color

    African Journals Online (AJOL)

    sunny

    2014-11-12

    Nov 12, 2014 ... Biomass materials require reduction and densification for the purpose of handling and space requirements. Guinea corn (Sorghum bi-color) is a major source of biomass material in the tropic regions. The densification process involves some ... a closed-end die, the temperature and the use of binder.

  6. bi tule

    Index Scriptorium Estoniae

    2004-01-01

    8.-18. IV 2004 Eesti Tarbekunsti- ja Disainimuuseumis Eesti Kunstiakadeemia keraamikaosakonna magistrantide grupinäitus "Läbi tule". Reeli Haamer, Kadri Kivi, Annika Vilippus, Ingrid Allik, Mathew Graziano ja Milvi Korela kaitsevad 12. IV oma magistritööd. 23. IV-15. VI näitus Leesi Ermi loomingust sarjas "Klassikud"

  7. Bi-Provincial Upgrader

    International Nuclear Information System (INIS)

    1997-01-01

    Husky Oil's Bi-Provincial Upgrader is located in the rural municipality of Wilton, east of Lloydminster, Saskatchewan. It is jointly owned by Husky Oil and the Saskatchewan government. The upgrader is designed to produce 7.300 m 3 /cd of synthetic crude from 8.440 m 3 /cd of diluted Lloyd blend and distillates from the existing Lloydminster refinery. The designed coke and sulphur production is 415 t/day and 240 t/day respectively. Chronology of the Bi-Provincial Upgrader project was presented, along with details of the heavy oil feedstock properties for Cold Lake, Lloydminster and Lloyd Blend. Upgrader production history since start-up, synthetic crude oil customers, and the evolution of prices for Edmonton light vs. Husky LLB at Hardisty were also reviewed. 3 tabs., 9 figs

  8. An experimental study on the geochemical behavior of highly siderophile elements (HSE) and metalloids (As, Se, Sb, Te, Bi) in a mss-iss-pyrite system at 650 °C: A possible magmatic origin for Co-HSE-bearing pyrite and the role of metalloid-rich phases in the fractionation of HSE

    Science.gov (United States)

    Cafagna, Fabio; Jugo, Pedro J.

    2016-04-01

    Pyrite, the most abundant sulfide in the Earth's crust, is an accessory mineral in several magmatic sulfide deposits. Although most pyrite is hydrothermal, previous experimental studies have shown that pyrite can also have a primary magmatic origin, by exsolving from monosulfide solid solution (mss) during cooling of a sulfide melt, if sulfur fugacity is sufficiently high. Pyrite from some localities has significant amounts of Co, and complex zonation in some low-melting-point chalcophile elements (LMCE), such as As, Se, Sb, Te, Bi (henceforth referred to as metalloids) and some platinum-group elements (PGE: Ru, Rh, Pd, Os, Ir, Pt). However, the origin of such pyrite and the causes of zonation are not clear. Because the distribution of some of these elements is heterogeneous and seems to be developed in concentric zones, the zonation has been interpreted to represent growth stages, some of them secondary and caused partly by hydrothermal fluids. Better constraints on the origin of Co-PGE-bearing pyrite could help unravel the geochemical processes affecting the sulfide assemblages in which it is found; thus, an experimental study was undertaken to characterize pyrite formation in magmatic sulfide environments and its relationship with metalloids and highly siderophile elements (HSE: PGE, Re, Au). Natural pyrrhotite, chalcopyrite, pentlandite and elemental S were mixed and doped with approximately 50 ppm of each HSE. A mixture of metalloids was added at 0.2 wt.% or 3 wt.% to aliquots of sulfide mixtures. Starting materials were sealed in evacuated silica tubes and fused at 1200 °C. The temperature was subsequently reduced to 750 °C (at 60 °C/h), then to 650 °C (at 0.5 °C/h) to produce relatively large euhedral pyrite crystals, then quenched. The experiments were analyzed using reflected light, SEM, EPMA and LA-ICP-MS. Experimental products contained euhedral pyrite, mss, intermediate solid solution (iss) and metalloid-rich phases, interpreted as quench product

  9. High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

    2012-09-15

    The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

  10. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  11. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  12. ReGaTE: Registration of Galaxy Tools in Elixir

    DEFF Research Database (Denmark)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric

    2017-01-01

    such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date...... of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE....

  13. 2 TeV HEB beam abort at the SSCL

    International Nuclear Information System (INIS)

    Schailey, R.; Bull, J.; Clayton, T.; Kocur, P.; Mokhov, N.

    1993-05-01

    The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and the counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes upon the full aperture requirement. In this report, we describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 1 TeV beam absorber

  14. 2 TeV HEB beam abort at the SSCL

    International Nuclear Information System (INIS)

    Schailey, R.; Bull, J.; Clayton, T.; Kocur, P.; Mokhov, N.V.

    1993-01-01

    The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes the full aperture requirement. In this report, the authors describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 2 TeV beam absorber

  15. Bi-liquid foams

    International Nuclear Information System (INIS)

    Sonneville, Odile

    1997-01-01

    Concentrated emulsions have structures similar to foams; for this reason they are also called 'bi-liquid foams'. For oil in water emulsions, they are made of polyhedral oil cells separated by aqueous surfactant films. The limited stability of these Systems is a major nuisance in their applications. In this work, we tried to understand and to control the mechanisms through which bi-liquid foams can loose their stability. In a first stage, we characterized the states of surfactant films in bi-liquid foams submitted to different pressures. We determined their hydration, the surfactant density at interfaces as well as their thicknesses. The bi-liquid foams were made by concentrating hexadecane-in-water emulsions through centrifugation. The initial emulsions contained submicron oil droplets that were completely covered with surfactant. We measured the resistance of the films to dehydration, and we represented it by pressure-film thickness curves or pressure-film hydration curves. We also obtained evidence that the interfacial surfactant density increases when the film thickness is decreased (SDS case). The Newton Black Film state is the most dehydrated metastable state that can be reached. In this state, the films can be described as surfactant bilayers that only contain the hydration water of the surfactant polar heads. Two different processes are involved the destabilization of bi-liquid foams: Ostwald ripening (oil transfer from small cells to large cells) and coalescence (films rupture). The first mechanism can be controlled by choosing oils that are very insoluble in water, avoiding ethoxylated nonionic surfactants of low molecular weight, and making emulsions that are not too fine. The second mechanism is responsible for the catastrophic destabilization of bi-liquid foams made of droplets above one micron or with a low coverage in surfactant. In these cases, destabilization occurs in the early stages of concentration, when the films are still thick. It is caused

  16. Raman Spectroscopy of Two-Dimensional Bi2TexSe3 − x Platelets Produced by Solvothermal Method

    Directory of Open Access Journals (Sweden)

    Jian Yuan

    2015-08-01

    Full Text Available In this paper, we report a facile solvothermal method to produce both binary and ternary compounds of bismuth chalcogenides in the form of Bi2TexSe3 − x. The crystal morphology in terms of geometry and thickness as well as the stoichiometric ratio can be well controlled, which offers the opportunities to systematically investigate the relationship between microstructure and phonon scattering by Raman spectroscopy. Raman spectra of four compounds, i.e., Bi2Se3, Bi2Se2Te, Bi2SeTe2 and Bi2Te3, were collected at four different excitation photon energies (2.54, 2.41, 1.96, and 1.58 eV. It is found that the vibrational modes are shifted to higher frequency with more Se incorporation towards the replacement of Te. The dependence of Raman vibrational modes on excitation photon energy was investigated. As the excitation photon energy increases, three Raman vibrational modes (A1g1, Eg2 and A1g2 of the as-produced compounds move to low frequency. Three Infrared-active (IR-active modes were observed in thin topological insulators (TIs crystals.

  17. Are BiTEs the "missing link" in cancer therapy?

    Science.gov (United States)

    Suryadevara, Carter M; Gedeon, Patrick C; Sanchez-Perez, Luis; Verla, Terence; Alvarez-Breckenridge, Christopher; Choi, Bryan D; Fecci, Peter E; Sampson, John H

    2015-06-01

    Conventional treatment for cancer routinely includes surgical resection and some combination of chemotherapy and radiation. These approaches are frequently accompanied by unintended and highly toxic collateral damage to healthy tissues, which are offset by only marginal prognostic improvements in patients with advanced cancers. This unfortunate balance has driven the development of novel therapies that aim to target tumors both safely and efficiently. Over the past decade, mounting evidence has supported the therapeutic utility of T-cell-centered cancer immunotherapy, which, in its various iterations, has been shown capable of eliciting highly precise and robust antitumor responses both in animal models and human trials. The identification of tumor-specific targets has further fueled a growing interest in T-cell therapies given their potential to circumvent the non-specific nature of traditional treatments. Of the several strategies geared toward achieving T-cell recognition of tumor, bispecific antibodies (bsAbs) represent a novel class of biologics that have garnered enthusiasm in recent years due to their versatility, specificity, safety, cost, and ease of production. Bispecific T-cell Engagers (BiTEs) are a subclass of bsAbs that are specific for CD3 on one arm and a tumor antigen on the second. As such, BiTEs function by recruiting and activating polyclonal populations of T-cells at tumor sites, and do so without the need for co-stimulation or conventional MHC recognition. Blinatumomab, a well-characterized BiTE, has emerged as a promising recombinant bscCD19×CD3 construct that has demonstrated remarkable antitumor activity in patients with B-cell malignancies. This clinical success has resulted in the rapid extension of BiTE technology against a greater repertoire of tumor antigens and the recent US Food and Drug Administration's (FDA) accelerated approval of blinatumomab for the treatment of a rare form of acute lymphoblastic leukemia (ALL). In this review

  18. Evolution of ferroelectric SrBi2Nb2O9 phase embedded in tellurite glass

    Science.gov (United States)

    Mohamed, E. A.

    2017-12-01

    Glasses with the composition, [(100-x)TeO2- x(SrO-Bi2O3-Nb2O5)] with x = 20, 30 and 40 (in mol %) were prepared. The X-ray diffraction (XRD) pattern and differential thermal analysis (DTA) for the as-prepared samples confirmed the amorphous and glassy characteristics, respectively. The SrBi2Nb2O9 phase in tellurite glass for HT773 sample at x = 40 mol % is formed and confirmed by the Rietveld refinement. DTA curves for all glass samples exhibit two endothermic dips while the two broad exothermic peaks at lower x reduced to one at higher x. Infrared (IR) results revealed that the glassy matrix are composed of TeO3, TeO3+1, TeO4, BiO6 and NbO6 structural units. The changes in the density (ρ), molar volume (Vm), oxygen molar volume (V0) and oxygen packing fraction (OPD) have correlated with structural changes in the glass network. The optical studies show an absorption bands below the absorption edge in the glass samples.

  19. Spatial profile of thermoelectric effects during Peltier pulsing in Bi and Bi/MnBi eutectic

    Science.gov (United States)

    Silberstein, R. P.; Larson, D. J., Jr.

    1987-01-01

    The spatial profile of the thermal transients that occur during and following the current pulsing associated with Peltier Interface Demarcation during directional solidification is studied. Results for pure Bi are presented in detail and compared with corresponding results for the Bi/MnBi eutectic. Significant thermal transients occur throughout the sample that can be accounted for by the Peltier effect, the Thomson effect, and Joule heating. These effects are separated and their behavior is studied as a function of time, current density, and position with respect to the solid/liquid interface.

  20. AsTeRICS.

    Science.gov (United States)

    Drajsajtl, Tomáš; Struk, Petr; Bednárová, Alice

    2013-01-01

    AsTeRICS - "The Assistive Technology Rapid Integration & Construction Set" is a construction set for assistive technologies which can be adapted to the motor abilities of end-users. AsTeRICS allows access to different devices such as PCs, cell phones and smart home devices, with all of them integrated in a platform adapted as much as possible to each user. People with motor disabilities in the upper limbs, with no cognitive impairment, no perceptual limitations (neither visual nor auditory) and with basic skills in using technologies such as PCs, cell phones, electronic agendas, etc. have available a flexible and adaptable technology which enables them to access the Human-Machine-Interfaces (HMI) on the standard desktop and beyond. AsTeRICS provides graphical model design tools, a middleware and hardware support for the creation of tailored AT-solutions involving bioelectric signal acquisition, Brain-/Neural Computer Interfaces, Computer-Vision techniques and standardized actuator and device controls and allows combining several off-the-shelf AT-devices in every desired combination. Novel, end-user ready solutions can be created and adapted via a graphical editor without additional programming efforts. The AsTeRICS open-source framework provides resources for utilization and extension of the system to developers and researches. AsTeRICS was developed by the AsTeRICS project and was partially funded by EC.

  1. Multiferroic BiFeO3-BiMnO3 Nanocheckerboard From First Principles

    OpenAIRE

    Palova, L.; Chandra, P.; Rabe, K. M.

    2010-01-01

    We present a first principles study of an unusual heterostructure, an atomic-scale checkerboard of BiFeO3-BiMnO3, and compare its properties to the two bulk constituent materials, BiFeO3 and BiMnO3. The "nanocheckerboard" is found to have a multiferroic ground state with the desired properties of each constituent: polar and ferrimagnetic due to BiFeO3 and BiMnO3, respectively. The effect of B-site cation ordering on magnetic ordering in the BiFeO3-BiMnO3 system is studied. The checkerboard ge...

  2. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    International Nuclear Information System (INIS)

    Dewan, Namrata; Sreenivas, K; Gupta, Vinay

    2008-01-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

  3. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    Science.gov (United States)

    Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

    2008-08-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

  4. Microstructure Of MnBi/Bi Eutectic Alloy

    Science.gov (United States)

    Wilcox, William R.; Eisa, G. F.; Baskaran, B.; Richardson, Donald C.

    1988-01-01

    Collection of three reports describes studies of directional solidification of MnBi/Bi eutectic alloy. Two of the reports, "Influence of Convection on Lamellar Spacing of Eutectics" and "Influence of Convection on Eutectic Microstructure," establish theoretical foundation for remaining document. Reports seek to quantify effect of convection on concentration field of growing lamellar eutectic. Remaining report, "Study of Eutectic Formation," begins by continuing theoretical developments. New technique under development by one of the authors helps to reveal three-dimensional microstructures of alloys.

  5. The modulation and reconstruction of a BiO layer of cuprate Bi2212

    International Nuclear Information System (INIS)

    Fan Wei; Zeng, Z

    2011-01-01

    Studies based on ab initio density functional theory show that the modulated structures of BiO surfaces of cuprate Bi2212 superconductors are spontaneously formed and closely related to the reconstructions of BiO surfaces. The reconstructions of BiO layers occur both on the surface and in the bulk, accompanied with the formations of BiO-zigzag chains and Bi 2 O 2 quadrilaterals. The structural modulations of the BiO surface are along the b axis, perpendicular to the BiO-zigzag chains along the a axis. Our calculations provide a unified understanding of the formation of modulating structures in Bi2212. Another interesting result is that electronic structures of BiO surfaces are significantly influenced by the CuO 2 layer beneath because of the structural modulations and reconstructions.

  6. Bi-stable optical actuator

    Science.gov (United States)

    Holdener, Fred R.; Boyd, Robert D.

    2000-01-01

    The present invention is a bi-stable optical actuator device that is depowered in both stable positions. A bearing is used to transfer motion and smoothly transition from one state to another. The optical actuator device may be maintained in a stable position either by gravity or a restraining device.

  7. Novel Bi/BiOBr/AgBr composite microspheres: Ion exchange synthesis and photocatalytic performance

    Science.gov (United States)

    Lyu, Jianchang; Li, Zhenlu; Ge, Ming

    2018-06-01

    Novel Bi/BiOBr/AgBr composite microspheres were prepared by a rational in situ ion exchange reaction between Bi/BiOBr microspheres and AgNO3. The characteristic of the as-obtained ternary microspheres was tested by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDS), scanning electron microscope (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (UV-vis DRS) and photoluminescence (PL). Under visible light irradiation, Bi/BiOBr/AgBr microspheres exhibited an excellent photocatalytic efficiency for rhodamine B (RhB) degradation, which was about 1.4 and 4.9 times as high as that of Bi/BiOBr and BiOBr/AgBr, demonstrating that the highest separation efficiency of charge carriers in the heterostructured Bi/BiOBr/AgBr. The photocatalytic activity of Bi/BiOBr/AgBr microspheres just exhibited a slight decrease after three consecutive cycles. The photocatalytic mechanism investigation confirmed that the superoxide radicals (O2•-) were the dominant reactive oxygen species for RhB degradation in Bi/BiOBr/AgBr suspension.

  8. Facile Fabrication of BiOI/BiOCl Immobilized Films with Improved Visible Light Photocatalytic Performance

    Science.gov (United States)

    Zhong, Yingxian; Liu, Yuehua; Wu, Shuang; Zhu, Yi; Chen, Hongbin; Yu, Xiang; Zhang, Yuanming

    2018-03-01

    Photocatalysis has been considered to be one of the most promising ways to photodegrade organic pollutants. Herein, a series of BiOI/BiOCl films coating on FTO were fabricated through a simple method at room temperature. The photocatalytic efficiency of 30%BiOI/BiOCl could reach more than 99% aiming to degrading RhB and MB after 90 and 120 min, respectively. Compared with BiOCl, 30%BiOI/BiOCl showed 12 times higher efficiency when degrading RhB. In comparison with BiOI, 30%BiOI/BiOCl showed 5 and 6 times higher efficiency when degrading RhB and MB, respectively. These obvious enhancements were attributed to expanded visible light absorption and high separation performance of photoinduced charge. Moreover, the photocatalytic activity of 30%BiOI/BiOCl had no obvious decrease after 5 recycles, suggesting that it was a promising photocatalyst for the removal of MB and RhB pollutants. Finally, the possible growth process for the BiOI/BiOCl thin films and photocatalysis mechanism were investigated in details. This work would provide insight to the reasonable construction of BiOX heterojunction and the photocatalytic mechanism in degrading organic pollutants.

  9. Facile Fabrication of BiOI/BiOCl Immobilized Films With Improved Visible Light Photocatalytic Performance

    Directory of Open Access Journals (Sweden)

    Yingxian Zhong

    2018-03-01

    Full Text Available HIGHLIGHTSA facial method was used to fabricate BiOI/BiOCl film at room temperature.30% BiOI/BiOCl showed an excellent photocatalytic activity and stability.Improvement of photocatalytic activity was owed to expanded visible light absorption and high separation efficiency of charge.Photocatalysis has been considered to be one of the most promising ways to photodegrade organic pollutants. Herein, a series of BiOI/BiOCl films coating on FTO were fabricated through a simple method at room temperature. The photocatalytic efficiency of 30%BiOI/BiOCl could reach more than 99% aiming to degrading RhB and MB after 90 and 120 min, respectively. Compared with BiOCl, 30%BiOI/BiOCl showed 12 times higher efficiency when degrading RhB. In comparison with BiOI, 30%BiOI/BiOCl showed 5 and 6 times higher efficiency when degrading RhB and MB, respectively. These obvious enhancements were attributed to expanded visible light absorption and high separation performance of photoinduced charge. Moreover, the photocatalytic activity of 30%BiOI/BiOCl had no obvious decrease after five recycles, suggesting that it was a promising photocatalyst for the removal of MB and RhB pollutants. Finally, the possible growth process for the BiOI/BiOCl thin films and photocatalysis mechanism were investigated in details. This work would provide insight to the reasonable construction of BiOX heterojunction and the photocatalytic mechanism in degrading organic pollutants.

  10. Towards Next Generation BI Systems

    DEFF Research Database (Denmark)

    Varga, Jovan; Romero, Oscar; Pedersen, Torben Bach

    2014-01-01

    Next generation Business Intelligence (BI) systems require integration of heterogeneous data sources and a strong user-centric orientation. Both needs entail machine-processable metadata to enable automation and allow end users to gain access to relevant data for their decision making processes....... This framework is based on the findings of a survey of current user-centric approaches mainly focusing on query recommendation assistance. Finally, we discuss the benefits of the framework and present the plans for future work....

  11. Teknisk Ståbi

    DEFF Research Database (Denmark)

    Teknisk Ståbi er de bygningsprojekterendes og entreprenørers håndbog. Den dækker matematik, fysik, statestik, laster og sikkerhed samt beggematerialerne: beton, stål, træ, murværk, letbeton, glas og endelig fundering. Denne udgave er en næsten totalrevision, baseret på de nye Eurocodes, der afløs...

  12. High-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution

    Directory of Open Access Journals (Sweden)

    J.-B. Vaney

    2016-10-01

    Full Text Available Bi2Te3-based compounds are a well-known class of outstanding thermoelectric materials. β-As2Te3, another member of this family, exhibits promising thermoelectric properties around 400 K when appropriately doped. Herein, we investigate the high-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution. Powder X-ray diffraction and scanning electron microscopy experiments showed that a solid solution only exists up to x = 0.035. We found that substituting Bi for As has a beneficial influence on the thermopower, which, combined with extremely low thermal conductivity values, results in a maximum ZT value of 0.7 at 423 K for x = 0.017 perpendicular to the pressing direction.

  13. Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

    Science.gov (United States)

    Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

    1988-05-01

    The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

  14. Bismuth-boron multiple bonding in BiB_2O"- and Bi_2B"-

    International Nuclear Information System (INIS)

    Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng

    2017-01-01

    Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB_2O"- and Bi_2B"-, containing triple and double B-Bi bonds are presented. The BiB_2O"- and Bi_2B"- clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB_2O"- ([Bi≡B-B≡O]"-) and Bi_2B"- ([Bi=B=Bi]"-), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Heterojunction BiOI/Bi2MoO6 nanocomposite with much enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Li, Wen Ting; Zheng, Yi Fan; Yin, Hao Yong; Song, Xu Chun

    2015-01-01

    BiOI/Bi 2 MoO 6 heterostructures with different amounts of BiOI were successfully prepared via a facile deposition method. The obtained BiOI/Bi 2 MoO 6 photocatalysts exhibited much higher visible light (λ > 420 nm) induced photocatalytic activity compared with single Bi 2 MoO 6 and BiOI photocatalysts. 20 % BiOI/Bi 2 MoO 6 nanocomposite exhibited the highest photocatalytic activity with almost all RhB decomposed within 70 min. However, excess BiOI covering on the surface of Bi 2 MoO 6 can inversely reduce the photocatalytic activity. The enhanced photocatalytic activities could be resulted from the function of the novel p–n heterojunction interface between Bi 2 MoO 6 and BiOI, which could separate photoinduced carriers efficiently. Possible mechanisms on the basis of the relative band positions were also discussed

  16. Calorimetric investigations of U-Bi system

    International Nuclear Information System (INIS)

    Agarwal, Renu; Joshi, A.R.

    2013-01-01

    U 0.333 Bi 0.667 is a compound that may form on breach of clad during reactor operation with metallic fuel and lead-bismuth coolant. Therefore, enthalpy of mixing of U-Bi liquid solution in limited composition range and enthalpy of formation of U 0.333 Bi 0.667 compound were measured by high temperature calorimetry. The enthalpy of mixing follows subregular solution model and enthalpy of formation U 0.333 Bi 0.667 from U(l) and Bi(l) at 843 K was -52.5 kJ/mol and -40.8 kJ/mol from U(s) and Bi(s) at 298.15 K. Both enthalpy of mixing and enthalpy of formation of intermetallic compound obtained experimentally were compared with Miedema model values. (author)

  17. Solution-processing of ultra-thin CdTe/ZnO nanocrystal solar cells

    International Nuclear Information System (INIS)

    MacDonald, Brandon I.; Gengenbach, Thomas R.; Watkins, Scott E.; Mulvaney, Paul; Jasieniak, Jacek J.

    2014-01-01

    We have carried out a detailed study into how modifications of the physical, chemical and optical properties of solution-processed, nanocrystalline CdTe layers influence the photovoltaic performance of sintered CdTe/ZnO nanocrystal solar cells. Such solar cells are fabricated through layer-by-layer assembly, which is enabled through an inter layer chemical and thermal treatment cycle. In this manner we are able to fabricate working solar cells with sintered CdTe layers as low as 90 nm, provided that grain size is precisely controlled. We show that the extent of grain growth achieved during the CdTe sintering process is strongly dependent on nanocrystal surface chemistry and chemical environment, with the removal of the organic capping ligands and the introduction of CdCl 2 prior to annealing leading to greatly enhanced growth. Due to the air processing involved and the nanocrystalline nature of the CdTe, the overall performance of these solar cells is shown to be strongly dependent on both annealing temperature and time, with optimal results requiring a balance between crystal growth and degradation due to oxidation. Using this simple bi-layer device structure, optimized treatment conditions result in power conversion efficiencies of up to 7.7% and peak internal quantum efficiencies in excess of 95%. - Highlights: • We study the growth of nanocrystalline CdTe thin films from colloidal nanocrystals. • We examine the CdTe growth profiles as a function of surface chemistry. • We show that nanocrystalline CdTe is susceptible to oxidation under air annealing. • We show how this oxidation influences performance in CdTe/ZnO solar cells. • We demonstrate CdTe/ZnO solar cells with an efficiency of 7.7% fabricated in air

  18. BI-ratkaisuja talouden suoritusjohtamiseen

    OpenAIRE

    Syrjä, Tero

    2013-01-01

    Tämä opinnäytetyö tehtiin tietojärjestelmiä toimittavan yrityksen tietovarasto- ja raportointiratkaisuja toteuttavan tiimin toiminnankehittämishankkeen yhteydessä. Kehitystavoitteena oli parantaa yrityksen muun henkilöstön tietämystä business intelligencestä. Opinnäyttetyön tavoitteena oli toimia osana tätä tavoitetta ja toimia dokumenttina, jota voitaisiin hyödyntää tilanteissa, joissa BI-tietämyksen kasvattaminen on tarpeen. Pääasiallisesti opinnäytetyö sisältää teoriaa liiketoimintatie...

  19. Peculiar atomic dynamics in liquid GeTe with asymmetrical bonding: Observation by inelastic x-ray scattering

    Science.gov (United States)

    Inui, M.; Koura, A.; Kajihara, Y.; Hosokawa, S.; Chiba, A.; Kimura, K.; Shimojo, F.; Tsutsui, S.; Baron, A. Q. R.

    2018-05-01

    Collective dynamics in liquid GeTe was investigated by inelastic x-ray scattering at 2 ≤Q ≤31 nm-1 . The dynamic structure factor shows clear inelastic excitations. The excitation energies at low Q disperse with increasing Q , consistent with the behavior of a longitudinal-acoustic excitation. The dispersion curve has a flat-topped region around the pseudo-Brillouin-zone boundary, similar to what is observed in liquid Bi [Inui et al., Phys. Rev. B 92, 054206 (2015), 10.1103/PhysRevB.92.054206]. The dynamic structure factor shows a low-frequency excitation, and its coupling with the longitudinal-acoustic mode plays an important role for a flat-topped dispersion. From these results, it is inferred that atomic dynamics in liquid GeTe is strongly affected by a Peierls distortion similar to liquid Bi. By comparing the momentum transfer dependence of the excitation energy and quasielastic linewidth to partial structure factors obtained by our own ab initio molecular dynamics simulation for liquid GeTe, the quasielastic and inelastic components were found to be correlated with Te-Te and Ge-(Ge,Te) partial structure factors, respectively.

  20. Te/C nanocomposites for Li-Te Secondary Batteries

    Science.gov (United States)

    Seo, Jeong-Uk; Seong, Gun-Kyu; Park, Cheol-Min

    2015-01-01

    New battery systems having high energy density are actively being researched in order to satisfy the rapidly developing market for longer-lasting mobile electronics and hybrid electric vehicles. Here, we report a new Li-Te secondary battery system with a redox potential of ~1.7 V (vs. Li+/Li) adapted on a Li metal anode and an advanced Te/C nanocomposite cathode. Using a simple concept of transforming TeO2 into nanocrystalline Te by mechanical reduction, we designed an advanced, mechanically reduced Te/C nanocomposite electrode material with high energy density (initial discharge/charge: 1088/740 mA h cm-3), excellent cyclability (ca. 705 mA h cm-3 over 100 cycles), and fast rate capability (ca. 550 mA h cm-3 at 5C rate). The mechanically reduced Te/C nanocomposite electrodes were found to be suitable for use as either the cathode in Li-Te secondary batteries or a high-potential anode in rechargeable Li-ion batteries. We firmly believe that the mechanically reduced Te/C nanocomposite constitutes a breakthrough for the realization and mass production of excellent energy storage systems.

  1. Aardkastanje, onopvallend en te weinig om te eten

    NARCIS (Netherlands)

    Spruijt, T.

    2010-01-01

    Hij staat vanaf half juni volop in bloei, maar wordt door weinigen gezien. Hoewel een zoektocht op Google anders doet vermoeden, wordt hij niet meer gegeten. De Aardkastanje is daarvoor te onopvallend en te zeldzaam in Nederland. Toch is het een bijzondere schermbloem.

  2. PbTe mechanosynthesis from PbO and Te

    International Nuclear Information System (INIS)

    Rojas-Chavez, Hugo; Diaz-de la Torre, Sebastian; Jaramillo-Vigueras, David; Plascencia, Gabriel

    2009-01-01

    Experimental results concerning the mechanosynthesis (MSY), of PbTe from the PbO-Te powder system, at room temperature an atmospheric conditions are reported. XRD results for samples milled for and after 5.4 ks only show PbTe diffraction peaks; neither Te nor PbO or any other solid phase were detected. Particle size and morphology, was followed by SEM observations. Phase evolution and quantification was monitored by Rietveld refinements of the X-ray diffraction data. It was found that the use of lead oxide as a component of the mechanosynthesis system reduces milling time with respect to the Pb-Te metallic system with mechanical alloying.

  3. MLED_BI: a new BI Design Approach to Support Multilingualism in Business Intelligence

    Directory of Open Access Journals (Sweden)

    Nedim Dedić

    2017-11-01

    Full Text Available Existing approaches to support Multilingualism (ML in Business Intelligence (BI create problems for business users, present a number of challenges from the technical perspective, and lead to issues with logical dependence in the star schema. In this paper, we propose MLED_BI (Multilingual Enabled Design for Business Intelligence, a novel BI design approach to support the application of ML in BI Environment, which overcomes the issues and problems found with existing approaches. The approach is based on a revision of the data warehouse dimensional modelling approach and treats the Star Schema as a higher level entity. This paper describes MLED_BI and the validation and evaluation approach used.

  4. Photocatalytic activity of Bi_2WO_6/Bi_2S_3 heterojunctions: the facilitation of exposed facets of Bi_2WO_6 substrate

    International Nuclear Information System (INIS)

    Yan, Long; Wang, Yufei; Shen, Huidong; Zhang, Yu; Li, Jian; Wang, Danjun

    2017-01-01

    Highlights: • Bi_2S_3/Bi_2WO_6 hybrids with exposed (020) Bi_2WO_6 facets have been synthesized. • X-ray photoelectron spectroscopy reveals that a small amount of Bi_2S_3 was formed. • The enhanced photoactivity of hybrids is due to heterojunction and (020) facets. • A possible photocatalytic degradation mechanism is proposed. - Abstract: Bi_2S_3/Bi_2WO_6 hybrid architectures with exposed (020) Bi_2WO_6 facets have been synthesized via a controlled anion exchange approach. X-ray photoelectron spectroscopy (XPS) reveals that a small amount of Bi_2S_3 was formed on the surface of Bi_2WO_6 during the anion exchange process, thus leading to the transformation from the Bi_2WO_6 to Bi_2S_3/Bi_2WO_6. A rhodamine B (RhB) aqueous solution was chosen as model organic pollutants to evaluate the photocatalytic activities of the Bi_2S_3/Bi_2WO_6 catalysts. Under visible light irradiation, the Bi_2S_3/Bi_2WO_6-TAA displayed the excellent visible light photoactivities compared with pure Bi_2S_3, Bi_2WO_6 and other composite photocatalysts. The efficient photocatalytic activity of the Bi_2S_3/Bi_2WO_6-TAA composite microspheres was ascribed to the constructed heterojunctions and the inner electric field caused by the exposed (020) Bi_2WO_6 facets. Active species trapping experiments revealed that h"+ and O_2·"− are the main active species in the photocatalytic process. Furthermore, the as-obtained photocatalysts showed good photocatalytic activity after four recycles. The results presented in this study provide a new concept for the rational design and development of highly efficient photocatalysts.

  5. The quadrupole interaction of 125Te and 129I in polycrystalline Te and in Te single crystals

    International Nuclear Information System (INIS)

    Langouche, G.; Rossum, M. van; Schmidt, K.P.; Coussement, R.

    1975-01-01

    Single crystals as hosts for Te and I sources were used in a study of Te. The Moessbauer spectra of 125 Te and 129 I in polycrystalline Te at liquid He temperature are given. Also presented are the Moessbauer spectra of 125 Te in a Te single crystal for the gamma ray parallel to the c-axis and perpendicular to the c-axis of the crystal at liquid He temperature. (Z.S.)

  6. Anisotropic pressure effects on the Kagome Cu3Bi(SeO3)2O2Cl metamagnet

    Science.gov (United States)

    Wu, H. C.; Tseng, W. J.; Yang, P. Y.; Chandrasekhar, K. D.; Berger, H.; Yang, H. D.

    2017-07-01

    The anisotropic spin-flip-induced multiferroic property of the Kagome single-crystal Cu3Bi(SeO3)2O2Cl was recently investigated. The doping effects on the structural and magnetic properties of Cu3Bi(Se1-x Te x O3)2O2Cl (0 ≤slant x≤slant 0.6) polycrystalline samples were studied to further explore and manipulate the metamagnetic spin-flip transition. With higher Te concentration, the lattice constants a and b exhibit a linear increase, whereas the lattice constant c gradually decreases, which indicates that the anisotropic expansion and compression effect is induced by Te substitution in the Se site. Subsequently, the antiferromagnetic transition (T N) shifts to a higher temperature, the critical field ({{H}\\text{c}} ) of the metamagnetic spin-flip transition increases, and the value of the saturation magnetisation ({{M}\\text{s}} ) diminishes. Meanwhile, the effects of isotropic expansion (with Br doping) and compression (with external pressure) do not show a clear influence on the spin-flip phenomena. Our results emphasise the introduction of anisotropic pressure in Cu3Bi(SeO3)2O2Cl, which modulates the magnetic interaction of Cu (I)-O1-Cu (I) and Cu (I)-O1-Cu (II) and, consequently, enhances the {{H}\\text{c}} of the spin-flip transition.

  7. Gd-substituted Bi-2223 superconductor

    Indian Academy of Sciences (India)

    The effects of gadolinium doping at calcium site on the normal and super- conducting properties of Bi-2223 system were ... quantities of the metal oxides and the carbonates were taken and thoroughly mixed. The calcination of the mixture after .... Therefore, Gd has higher solubility in (BiPb)-2223 as compared to Pr, and is, ...

  8. Facile synthesis of Bi/BiOCl composite with selective photocatalytic properties

    International Nuclear Information System (INIS)

    Chen, Dongling; Zhang, Min; Lu, Qiuju; Chen, Junfang; Liu, Bitao; Wang, Zhaofeng

    2015-01-01

    This paper presents a novel and facile method to fabricate Bi/BiOCl composites with dominant (001) facets in situ via a microwave reduction route. Different characterization techniques, including X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission scanning electron microscopy (TEM), UV–vis diffuse reflectance spectrometry (DRS), X-ray photoelectron spectroscopy (XPS), electron spin resonance spectroscopy (ESR), cathodoluminescence spectrum (CL), and lifetime, have been employed to investigate the structure, optical and electrical properties of the Bi/BiOCl composites. The experimental results show that the introduction of Bi particles can efficiently enhance the photocatalytic performance of BiOCl for the degradation of several dyes under ultraviolet (UV) light irradiation, especially for negative charged methyl orange (MO). Unlike the UV photocatalytic performance, such Bi/BiOCl composite shows higher degradation efficiency towards rhodamine B (RhB) than MO and methylene blue (MB) under visible light irradiation. This special photocatalytic performance can be ascribed to the synergistic effect between oxygen vacancies and Bi particles. This work provides new insights about the photodegradation mechanisms of MO, MB and RhB under UV and visible light irradiation, which would be helpful to guide the selection of an appropriate catalyst for other pollutants. - Highlights: • Bi/BiOCl composites were synthesized via a microwave reduction. • Tunable selectivity photocatalytic activity can be achieved. • Photodegradation mechanism under UV and visible light were proposed

  9. Direct synthesis of BiCuChO-type oxychalcogenides by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Pele, Vincent; Barreteau, Celine [Institut de Chimie Moléculaire et des Matériaux d’Orsay, Univ. Paris-Sud, UMR 8182, Orsay F-91405 (France); CNRS, Orsay F-91405 (France); Berardan, David, E-mail: david.berardan@u-psud.fr [Institut de Chimie Moléculaire et des Matériaux d’Orsay, Univ. Paris-Sud, UMR 8182, Orsay F-91405 (France); CNRS, Orsay F-91405 (France); Zhao, Lidong; Dragoe, Nita [Institut de Chimie Moléculaire et des Matériaux d’Orsay, Univ. Paris-Sud, UMR 8182, Orsay F-91405 (France); CNRS, Orsay F-91405 (France)

    2013-07-15

    We report on the direct synthesis of BiCuChO based materials by mechanical alloying (Ch=Se, Te). We show that contrary to the synthesis paths used in the previous reports dealing with this family of materials, which use costly annealings in closed silica tubes under controlled atmosphere, this new synthesis route enables the synthesis of pure phase materials at room temperature under air, with reasonable milling time. This synthesis procedure is easily scalable for large scale applications. - Highlights: • Phase pure BiCuSeO doped and undoped prepared by mechanical alloying. • Synthesis performed under air at room temperature. • Electrical properties similar to that of samples synthesized by a classical path.

  10. Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3.

    Science.gov (United States)

    Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J

    2010-08-27

    When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.

  11. Bouwlogistieke innovaties weerbarstig te implementeren

    NARCIS (Netherlands)

    Ludema, M.W.; Vries, A.M.R.

    2015-01-01

    Toelevering van bouwmaterialen aan bouwprojecten is complex en verregaande gesegregeerd. De bouwsector staat voor een kans te innoveren op het vlak van de bouwlogistiek. In het verleden is ervaring opgedaan met ‘best-practices’ die voldoende kansen bieden de noodzakelijk innovatie door te voeren.

  12. One-step growth of nanosheet-assembled BiOCl/BiOBr microspheres for highly efficient visible photocatalytic performance

    Science.gov (United States)

    Zhang, Jinfeng; Lv, Jiali; Dai, Kai; Liang, Changhao; Liu, Qi

    2018-02-01

    In this work, we have developed a simple synthetic approach of nanosheet-assembled BiOCl/BiOBr microspheres by an ethylene glycol (EG)-assisted hydrothermal method. The crystalline form, morphology, chemical composition, optical performance and surface area of BiOCl/BiOBr microspheres were identified using X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution TEM (HRTEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy spectra (EDX), UV-vis diffuse reflectance spectroscopy (DRS) analysis, high resolution X-ray photoelectron spectra (XPS) and N2 adsorption-desorption isotherms. BiOCl/BiOBr microspheres were nanosheet-assembled particles, which possessed visible light absorption under LED light irridation. Additionally, the methylene blue (MB) photodegradation performance of different BiOCl/BiOBr microspheres irradiated under 410 nm LED light arrays were investigated, the results exhibited that as-prepared BiOCl/BiOBr products showed higher catalytic effiency than pure BiOCl or BiOBr. By optimizing the composition ration of the BiOCl and BiOBr, up to 93% degradation rate can be obtained in the 40%BiOCl/BiOBr microspheres. Finally, the photocatalytic mechanism of BiOCl/BiOBr microspheres had been proposed.

  13. Mechanical properties of BixSb2−xTe3 nanostructured thermoelectric material

    International Nuclear Information System (INIS)

    Li, G; Gadelrab, K R; Souier, T; Chiesa, M; Potapov, P L; Chen, G

    2012-01-01

    Research on thermoelectric (TE) materials has been focused on their transport properties in order to maximize their overall performance. Mechanical properties, which are crucial for system reliability, are often overlooked. The recent development of a new class of high-performance, low-dimension thermoelectric materials calls for a better understanding of their mechanical behavior to achieve the desired system reliability. In the present study we investigate the mechanical behavior of nanostructure bulk TE material p-type Bi x Sb 2−x Te 3 by means of nanoindentation and 3D finite element analysis. The Young’s modulus of the material was estimated by the Oliver–Pharr (OP) method and by means of numerically assisted nanoindentation analysis yielding comparable values about 40 GPa. Enhanced hardness and yield strength can be predicted for this nanostructured material. Microstructure is studied and correlation with mechanical properties is discussed. (paper)

  14. On one possibility for application of new thermoelectric materials based on Ag2Te

    International Nuclear Information System (INIS)

    Vassilev, Venceslav; Parvanov, Svetlin; Vachkov, Valeri

    2011-01-01

    The thermoelectric characteristics of Ag 2 Te and Ag 1,84 Cd 0,08 Te (solid solution based on Ag 2 Te) are investigated and analyzed. The main thermoelectric characteristics of the solid solution: α=118 μV/K; σ = 2230 S/cm and = 2,45.10 -2 W/(cm.K) ensure coefficient of thermoelectric efficiency z = 1,27. 10-3 K -1 (at 300 ), which increases this of the Ag 2 Te. A composition for commutation material is developed, which connects the N- and the P-branches of a single thermo element (52 wt. % In + 48 wt. % Sn) with melting temperature of 390 K. The possibility for application of the Ag 1,84 Cd 0,08 Te solid solution as N-branch of a thermo element in combination with the solid solution Bi 0,5 Sb 1,5 Te 3 (P-branch) is investigated. The thermo element guarantees values of z from 0,71.10 -3 to 1,27.10 -3 K -1 in the temperature interval 250 - 350 . The maximum z value is registered at 300 K (z = 1,27.10 -3 K -1 ). Keywords: Silver telluride, Solid solutions, Thermoelectric properties, Thermo element

  15. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  16. Enhancing Thermoelectric Performances of Bismuth Antimony Telluride via Synergistic Combination of Multiscale Structuring and Band Alignment by FeTe2 Incorporation.

    Science.gov (United States)

    Shin, Weon Ho; Roh, Jong Wook; Ryu, Byungki; Chang, Hye Jung; Kim, Hyun Sik; Lee, Soonil; Seo, Won Seon; Ahn, Kyunghan

    2018-01-31

    It has been a difficulty to form well-distributed nano- and mesosized inclusions in a Bi 2 Te 3 -based matrix and thereby realizing no degradation of carrier mobility at interfaces between matrix and inclusions for high thermoelectric performances. Herein, we successfully synthesize multistructured thermoelectric Bi 0.4 Sb 1.6 Te 3 materials with Fe-rich nanoprecipitates and sub-micron FeTe 2 inclusions by a conventional solid-state reaction followed by melt-spinning and spark plasma sintering that could be a facile preparation method for scale-up production. This study presents a bismuth antimony telluride based thermoelectric material with a multiscale structure whose lattice thermal conductivity is drastically reduced with minimal degradation on its carrier mobility. This is possible because a carefully chosen FeTe 2 incorporated in the matrix allows its interfacial valence band with the matrix to be aligned, leading to a significantly improved p-type thermoelectric power factor. Consequently, an impressively high thermoelectric figure of merit ZT of 1.52 is achieved at 396 K for p-type Bi 0.4 Sb 1.6 Te 3 -8 mol % FeTe 2 , which is a 43% enhancement in ZT compared to the pristine Bi 0.4 Sb 1.6 Te 3 . This work demonstrates not only the effectiveness of multiscale structuring for lowering lattice thermal conductivities, but also the importance of interfacial band alignment between matrix and inclusions for maintaining high carrier mobilities when designing high-performance thermoelectric materials.

  17. Adaptación de dos piezas distintas a una pieza bi-materia

    OpenAIRE

    Gómez Acevedo, Rocío

    2014-01-01

    El presente proyecto se ha realizado en la empresa Faurecia Automotive Exteriors [Anexo-A], para la pieza llamada Spoiler del proyecto parachoques delantero A05GPPOLO del grupo Volkswagen (VW). Dicho proyecto se enfoca en la adaptación de dos piezas compuestas por polímeros diferentes en una única pieza bi-materia, utilizando la técnica de inyección multi-componente. Se ha partido de un estudio teórico previo sobre la posible compatibilidad entre la unión rígido-suave de los mater...

  18. CdTe as a passivating layer in CdTe/HgCdTe heterostructures

    International Nuclear Information System (INIS)

    Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

    2008-01-01

    CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

  19. Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

    2015-11-15

    N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

  20. Utjecaj liberalizacije na tržište stočarskih proizvoda

    Directory of Open Access Journals (Sweden)

    Ružica Lončarić

    2004-01-01

    Full Text Available Ulaskom u Svjetsku trgovinsku organizaciju Republika Hrvatska je dokazala spremnost za izazove liberalizacije i globalizacije svjetskoga tržišta. Ovom je koraku prethodilo i potpisivanju drugih značajnih dokumenata za uključenje u europski integracijski proces, kao što je Pakt o stabilizaciji u istočnoj Europi, Sporazum o stabilizaciji i Pridruživanju EU i RH, službeno priključenje CEFTA-i, te službena prijava za članstvo u EU, koji na provođenje određenih reformi i prilagodbu u političkome, gospodarskom i pravnom smislu. Kako se hrvatska poljoprivreda, pogotovo grana stočarstva, od osamostaljenja i prihvaćanja tržišnog sustava gospodarenja, nalazi u velikoj krizi, u radu se analizira položaj stočarstva s obzirom na uvjete proizvodnje i brojno stanje stoke, tržište stočarskih proizvoda uz pomoć dinamičke raščlambe sustava proizvodnje stočarskih proizvoda, te se daju prognoze na koji će se način odvijati adaptacija stočarstva u uvjetima EU s obzirom na konkurentnost naših stočarskih proizvoda u europskom okruženju tes obzirom na liberalizacijske obveze. Rezultati analizirani u radu pokazuju kako je hrvatska proizvodnja i tržište stočarskih proizvoda u dubokoj krizi, te da bi bilo potrebno poduzeti niz tržišno-cjenovnih mjera agrarne politike koje bi uredilo navedeno tržište s obzirom na obveze i pravila o liberalizaciji trgovine unutar europskog tržišta.

  1. Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

    KAUST Repository

    Kong, Desheng

    2011-10-02

    Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

  2. TOOL ASSEMBLY WITH BI-DIRECTIONAL BEARING

    Science.gov (United States)

    Longhurst, G.E.

    1961-07-11

    A two-direction motion bearing which is incorporated in a refueling nuclear fuel element trsnsfer tool assembly is described. A plurality of bi- directional bearing assembliesare fixed equi-distantly about the circumference of the transfer tool assembly to provide the tool assembly with a bearing surface- for both axial and rotational motion. Each bi-directional bearing assembly contains a plurality of circumferentially bulged rollers mounted in a unique arrangement which will provide a bearing surface for rotational movement of the tool assembly within a bore. The bi-direc tional bearing assembly itself is capable of rational motion and thus provides for longitudinal movement of the tool assembly.

  3. BiDil: from another vantage point.

    Science.gov (United States)

    Puckrein, Gary

    2006-01-01

    In a recent Health Affairs Web Exclusive, Pamela Sankar and Jonathan Kahn argue against the Food and Drug Administration's approval of BiDil as a new drug for the treatment of heart failure in African Americans. Their paper questions the existence of disparities between African American and other heart-failure patients and the motivations of BiDil's developers and manufacturer. The disparities are confirmed and persistent, however, and BiDil's effectiveness is proven. If the authors' logic were to prevail, patients would be denied life-saving therapy. Continued investigation will likely narrow identification of patients who will benefit.

  4. Preparation, characterization and enhanced visible-light photocatalytic activities of BiPO4/BiVO4 composites

    International Nuclear Information System (INIS)

    Wu, Siyuan; Zheng, Hong; Lian, Youwei; Wu, Yiying

    2013-01-01

    Graphical abstract: - Highlights: • BiPO 4 /BiVO 4 composites were successfully prepared by the hydrothermal method. • BiPO 4 /BiVO 4 composites exhibited broad absorption in the visible region. • Visible-light photocatalytic activities of BiPO 4 /BiVO 4 composites were enhanced. • P/V molar ratio and pH value of the reaction affect photocatalytic activity. • The mechanism of enhanced visible-light photocatalytic activities was discussed. - Abstract: BiPO 4 /BiVO 4 composites with different P/V molar ratios were prepared by the hydrothermal method and the effect of pH values of hydrothermal reaction on photocatalytic activity of BiPO 4 /BiVO 4 composite was investigated. The photocatalysts were characterized by X-ray diffraction, field emission scanning electron microscopy, energy-dispersive spectroscopy, X-ray photoelectron spectroscopy and UV–vis diffuse reflectance spectroscopy. The photocatalytic property of BiPO 4 /BiVO 4 was evaluated by photocatalytic degradation of Methylene blue under visible light irradiation. The results showed that the photocatalytic activity of the composites was much higher than that of pure BiPO 4 and BiVO 4 . The rate constant of Methylene blue degradation over BiPO 4 /BiVO 4 (P/V molar ratio of 5:1 and hydrothermal reaction pH value of 1.5) is 1.7 times that of pure BiVO 4 . The photocatalytic activity enhancement of BiPO 4 /BiVO 4 composite is closely related to the BiVO 4 functioning as a sensitizer to adsorb visible light and the heterojunction of BiPO 4 /BiVO 4 acting as an active center for hindering the rapid recombination of electron–hole pairs during the photocatalytic reaction

  5. Luminescence of Bi3+ ions in Y3Al5O12:Bi single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Voznyak, T.; Vistovsky, V.; Nedilko, S.; Nikl, M.

    2007-01-01

    The absorption and cathodoluminescence spectra of single crystalline films (SCF) of Y 3 Al 5 O 12 :Bi garnet depending on Bi concentration were analyzed. For consideration of the nature of the UV and visible Bi-related emission bands the time-resolved luminescence of Bi 3+ (ns 2 ) ions in YAG:Bi SCF was studied at 10 K under excitation by synchrotron radiation. The difference in the excitation spectra and emission decay of the UV and visible bands has been explained via radiative relaxation from the 3 P 1,0 excited states to the 1 S 0 ground state of the isolated and pair/clustered Bi 3+ emission centers in the garnet lattice, respectively

  6. Exploratory Bi-Factor Analysis: The Oblique Case

    Science.gov (United States)

    Jennrich, Robert I.; Bentler, Peter M.

    2012-01-01

    Bi-factor analysis is a form of confirmatory factor analysis originally introduced by Holzinger and Swineford ("Psychometrika" 47:41-54, 1937). The bi-factor model has a general factor, a number of group factors, and an explicit bi-factor structure. Jennrich and Bentler ("Psychometrika" 76:537-549, 2011) introduced an exploratory form of bi-factor…

  7. ReGaTE: Registration of Galaxy Tools in Elixir.

    Science.gov (United States)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

    2017-06-01

    Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE . © The Author 2017. Published by Oxford University Press.

  8. Schreibende Messgeräte

    Science.gov (United States)

    Plaßmann, Wilfried

    Die schreibenden Messgeräte werden hauptsächlich eingesetzt, um Vorgänge aufzuzeichnen und zu dokumentieren, die sich im Minuten- und Stunden-Bereich abspielen. Sie sind weitgehend durch Oszilloskope oder elektronische Geräte ähnlich einem Oszilloskop ersetzt worden, die entsprechend für Langzeitaufnahmen ausgelegt sind. Der Vorteil dieser Geräte gegenüber den schreibenden Messgeräten ist der, dass die Daten dauerhaft gespeichert sind, einschließlich der notwendigen Kenngrößen wie Zeitmaßstab, Amplitude, Datum, Aufzeichnungsgerät usw., und sich in dieser Form beliebig oft ausdrucken und vor allem direkt weiterverarbeiten lassen. Weiterhin entfallen die Probleme mit der Mechanik, dem Papier und den Schreibstiften. Deshalb folgt hier eine nur kurze Darstellung der Geräte.

  9. Bi-induced band gap reduction in epitaxial InSbBi alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Alaria, J.; Veal, T. D., E-mail: T.Veal@liverpool.ac.uk [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Bomphrey, J. J.; Jones, T. S.; Ashwin, M. J., E-mail: M.J.Ashwin@warwick.ac.uk [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Sallis, S.; Piper, L. F. J. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-11-24

    The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb{sub 0.976}Bi{sub 0.024}, a reduction of ∼35 meV/%Bi.

  10. Quarterly, Bi-annual and Annual Reports

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Quarterly, Bi-annual and Annual Reports are periodic reports issued for public release. For the deep set fishery these reports are issued quarterly and anually....

  11. Calorimetric investigation of Pb-Bi system

    International Nuclear Information System (INIS)

    Agarwal, Renu; Jat, Ram Avtar; Sen, B.K.

    2008-01-01

    Enthalpy increment of Pb 0.71 Bi 0.29 compound was determined using high temperature Calvet calorimeter. The data was fit into the following polynomial equation. ΔH(T-298.15 K) J/mol = -10384.96 + 39.23 T - 0.014T 2 - 18970/T. By precipitation method, the enthalpy of formation of the compound of composition Pb 0.68 Bi 0.32 at 448 K, from Pb(l) and Bi(l) was determined to be -2450± 50 J/mol and from Pb(s) and Bi(s) at 298.15 K was calculated to be 4047 J/mol. (author)

  12. Influence of photoinduced Bi-related self-doping on the photocatalytic activity of BiOBr nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan [School of Life Sciences, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR (China); Yue, Songtao; Wang, Wei [College of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); An, Tiacheng, E-mail: antc99@gig.ac.cn [Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Li, Guiying [Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Ye, Liqun [School of Life Sciences, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR (China); College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061 (China); Yip, Ho Yin [School of Life Sciences, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR (China); Wong, Po Keung, E-mail: pkwong@cuhk.edu.hk [School of Life Sciences, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR (China)

    2017-01-01

    Highlights: • Bi{sup 5+} self-doped BiOBr nanosheets are achieved under UV irradiation. • Bi{sup 5+} is formed due to the oxidation of surface Bi{sup 3+} by photoexcited h{sup +} of BiOBr. • Two photoinduced h{sup +} mediated oxidation processes happen simultaneously. • Self-doped BiOBr is superior in phenol degradation and bacterial inactivation. • Bi{sup 5+} electron trapping induced photocatalytic enhancement mechanism is proposed. - Abstract: Under UV irradiation, self-doped Bi{sup 5+} is evidenced to be generated on the surface of BiOBr nanosheets, but with well-preserved crystal structure and morphology compared with pure counterpart. Bi{sup 5+} self-doping BiOBr (BiOBr-4) exhibits distinct photocatalytic mode for dyes degradation, as compared with pure BiOBr nanosheets. These photodegradation distinctions are mainly due to the simultaneous occurrence of two photoinduced hole (h{sup +}) mediated oxidation processes on the BiOBr surfaces: (1) a portion of photoexcited h{sup +} participates in the photocatalytic oxidation of dyes, and (2) partial h{sup +} involves the oxidation of Bi{sup 3+} to Bi{sup 5+}. Notably, BiOBr-4 nanosheets comparatively show superior photocatalytic activity for the phenol decomposition as well as the bacterial inactivation. Besides Bi{sup 5+} induced narrowed bandgap and enhanced light adsorption capacity, significantly, the oxidative Bi{sup 5+} acts as electron traps to promote the photoexcited electron-hole separation and accelerate h{sup +} migration, resulting in the considerable photocatalytic enhancement of BiOBr-4 nanosheets. These novel findings will not only give new insights into the photocatalytic mechanism but also explore new route to enhance photocatalytic performance of Bi-based materials.

  13. Gamma transitions in 127Te

    International Nuclear Information System (INIS)

    Batista, Wagner Fonseca; Zamboni, Cibele Bugno

    2009-01-01

    This study of the 127 Te β - decay was carried out by means of gamma spectroscopy measurements using high resolution Ge detector, in the region from 150 keV up to 1000 keV, aiming to get a better understanding of the 127 Te nuclear structure. Several gamma transitions were confirmed when compared with those published in the last compilation. These data resulting in lower uncertainty. (author)

  14. Metaheuristics for bi-level optimization

    CERN Document Server

    2013-01-01

    This book provides a complete background on metaheuristics to solve complex bi-level optimization problems (continuous/discrete, mono-objective/multi-objective) in a diverse range of application domains. Readers learn to solve large scale bi-level optimization problems by efficiently combining metaheuristics with complementary metaheuristics and mathematical programming approaches. Numerous real-world examples of problems demonstrate how metaheuristics are applied in such fields as networks, logistics and transportation, engineering design, finance and security.

  15. BiCaSrCuO superconductors

    International Nuclear Information System (INIS)

    Polvi, V.M.; Niemi, K.J.

    1989-01-01

    BiCaSrCuO and BiPbCaSrCuO powders have been synthesized. Different research methods (SEM,EDS,XRF,SRD,DTA) have been used to characterize the bulk specimen and wires. Resistance and current density measured as a function of temperature are reported. The ceramic products contained several phases. Lead containing specimen gave the best results and the synthesis was easily reproducible

  16. BiP Negatively Affects Ricin Transport

    Directory of Open Access Journals (Sweden)

    Kirsten Sandvig

    2013-05-01

    Full Text Available The AB plant toxin ricin binds both glycoproteins and glycolipids at the cell surface via its B subunit. After binding, ricin is endocytosed and then transported retrogradely through the Golgi to the endoplasmic reticulum (ER. In the ER, the A subunit is retrotranslocated to the cytosol in a chaperone-dependent process, which is not fully explored. Recently two separate siRNA screens have demonstrated that ER chaperones have implications for ricin toxicity. ER associated degradation (ERAD involves translocation of misfolded proteins from ER to cytosol and it is conceivable that protein toxins exploit this pathway. The ER chaperone BiP is an important ER regulator and has been implicated in toxicity mediated by cholera and Shiga toxin. In this study, we have investigated the role of BiP in ricin translocation to the cytosol. We first show that overexpression of BiP inhibited ricin translocation and protected cells against the toxin. Furthermore, shRNA-mediated depletion of BiP enhanced toxin translocation resulting in increased cytotoxicity. BiP-dependent inhibition of ricin toxicity was independent of ER stress. Our findings suggest that in contrast to what was shown with the Shiga toxin, the presence of BiP does not facilitate, but rather inhibits the entry of ricin into the cytosol.

  17. Optical phonons in PbTe/CdTe multilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  18. Elevages de bétail dans la région du Poro (Côte d'Ivoire ...

    African Journals Online (AJOL)

    Elevages de bétail dans la région du Poro (Côte d'Ivoire) : Caractérisation et modalités de lutte contre les pathogènes transmis par les tiques. Nawolo YEO1, Yahaya KARAMOKO1*, Dofara SORO1, Zahouli FaustinZOUH BI1 et. Seïdina Ibrahima TRAORE2. 1Université Nangui Abrogoua, UFR-SN, Laboratoire de Biologie et ...

  19. Development of MnBi permanent magnet: Neutron diffraction of MnBi powder

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J., E-mail: jun.cui@pnnl.gov; Choi, J. P.; Li, G.; Polikarpov, E.; Darsell, J. [Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Kramer, M. J.; Zarkevich, N. A.; Wang, L. L.; Johnson, D. D. [Materials Sciences and Engineering Division, Ames Laboratory, Ames, Iowa 50011 (United States); Marinescu, M. [Electron Energy Corporation, Landisville, Pennsylvania 17538 (United States); Huang, Q. Z.; Wu, H. [NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102 (United States); Vuong, N. V.; Liu, J. P. [Department of Physics, University of Texas at Arlington, Arlington, Texas 76019 (United States)

    2014-05-07

    MnBi attracts great attention in recent years for its great potential as permanent magnet materials. MnBi phase is difficult to obtain because of the rather drastic peritectic reaction between Mn and Bi. In this paper, we report our effort on synthesizing high purity MnBi compound using conventional powder metallurgical approaches. Neutron diffraction was carried out to investigate the crystal and nuclear structure of the obtained powder. The result shows that the purity of the obtained powder is about 91 wt. % at 300 K, and the magnetic moment of the Mn atom in MnBi lattice is 4.424 and 4.013 μ{sub B} at 50 K and 300 K, respectively.

  20. Development of MnBi permanent magnet: Neutron diffraction of MnBi powder

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J; Choi, JP; Li, G; Polikarpov, E; Darsell, J; Kramer, MJ; Zarkevich, NA; Wang, LL; Johnson, DD; Marinescu, M; Huang, QZ; Wu, H; Vuong, NV; Liu, JP

    2014-05-07

    MnBi attracts great attention in recent years for its great potential as permanent magnet materials. MnBi phase is difficult to obtain because of the rather drastic peritectic reaction between Mn and Bi. In this paper, we report our effort on synthesizing high purity MnBi compound using conventional powder metallurgical approaches. Neutron diffraction was carried out to investigate the crystal and nuclear structure of the obtained powder. The result shows that the purity of the obtained powder is about 91 wt. % at 300 K, and the magnetic moment of the Mn atom in MnBi lattice is 4.424 and 4.013 mu(B) at 50 K and 300 K, respectively. (C) 2014 AIP Publishing LLC.

  1. Ab initio Assessment of Bi1-xRExCuOS (RE=La, Gd, Y, Lu) Solid Solution as Semiconductor for Photochemical Water Splitting

    KAUST Repository

    Lardhi, Sheikha F.

    2017-04-12

    The investigation of BiCuOCh (Ch = S, Se and Te) semiconductors family for thermoelectric or photovoltaic materials is an increasing topic of research. These materials can also be considered for photochemical water splitting if one representative having a bandgap, Eg, around 2 eV can be developed. With this aim, we simulated the solid solution Bi1-xRExCuOS (RE = Y, La, Gd and Lu) from pure BiCuOS (Eg~1.1 eV) to pure RECuOS compositions (Eg~2.9 eV) by DFT calculations based on the HSE06 range-separated hybrid functional with inclusion of spin-orbit coupling. Starting from the thermodynamic stability of the solid solution, a large variety of properties were computed for each system including bandgap, dielectric constants, effective masses and exciton binding energies. We discussed the variation of these properties based on the relative organization of Bi and RE atoms in their common sublattice to offer a physical understanding of the influence of the RE doping of BiCuOS. Some compositions were found to give appropriate properties for water splitting application. Furthermore, we found that at low RE fractions the transport properties of BiCuOS are improved that can find applications beyond water splitting.

  2. Ab initio Assessment of Bi1-xRExCuOS (RE=La, Gd, Y, Lu) Solid Solution as Semiconductor for Photochemical Water Splitting

    KAUST Repository

    Lardhi, Sheikha F.; Curutchet, Antton; Cavallo, Luigi; Harb, Moussab; Le Bahers, Tangui

    2017-01-01

    The investigation of BiCuOCh (Ch = S, Se and Te) semiconductors family for thermoelectric or photovoltaic materials is an increasing topic of research. These materials can also be considered for photochemical water splitting if one representative having a bandgap, Eg, around 2 eV can be developed. With this aim, we simulated the solid solution Bi1-xRExCuOS (RE = Y, La, Gd and Lu) from pure BiCuOS (Eg~1.1 eV) to pure RECuOS compositions (Eg~2.9 eV) by DFT calculations based on the HSE06 range-separated hybrid functional with inclusion of spin-orbit coupling. Starting from the thermodynamic stability of the solid solution, a large variety of properties were computed for each system including bandgap, dielectric constants, effective masses and exciton binding energies. We discussed the variation of these properties based on the relative organization of Bi and RE atoms in their common sublattice to offer a physical understanding of the influence of the RE doping of BiCuOS. Some compositions were found to give appropriate properties for water splitting application. Furthermore, we found that at low RE fractions the transport properties of BiCuOS are improved that can find applications beyond water splitting.

  3. Optical band gap of Sn0⋅2Bi1⋅8Te3 thin films

    Indian Academy of Sciences (India)

    Unknown

    tors, thermocouples, thermo coolers and IR sensors with the best figure of merit near room temperature (Roy et al. 1978; Jeon et al 1981; Rowe and Bandari 1981; Good- ... pressure used to seal the quartz ampoules containing the charge was of the order of 10–5 Pa. The sealed ampoule was kept in an alloy mixing furnace, ...

  4. Geometric dependence of Nb-Bi2Te3-Nb topological Josephson junction transport parameters

    International Nuclear Information System (INIS)

    Molenaar, C G; Leusink, D P; Brinkman, A; Wang, X L

    2014-01-01

    Superconductor-topological insulator–superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realized devices, one would expect that trivial 2π-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing. (paper)

  5. Properties of Thermoelectric Nanocomposite Bi2Te3 Layers Prepared by PLD

    Czech Academy of Sciences Publication Activity Database

    Zeipl, Radek; Jelínek, Miroslav; Kocourek, Tomáš; Remsa, Jan; Vaniš, Jan; Vlček, Milan

    2014-01-01

    Roč. 183, č. 12 (2014), s. 103-109 ISSN 2306-8515 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:61389013 ; RVO:68378271 ; RVO:67985882 Keywords : thermoelectric materials * pulsed laser deposition * thin layered Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (FZU-D); JA - Electronics ; Optoelectronics, Electrical Engineering (URE-Y) http://www.sensorsportal.com/HTML/DIGEST/P_2549.htm

  6. Geometric effects on surface states in topological insulator Bi2Te3 nanowire

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

    2012-02-01

    Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

  7. Morphological evolution in single-crystalline Bi2Te3 nanoparticles ...

    Indian Academy of Sciences (India)

    to have ZT exceeding 5 (Lin et al 2000). ... as nanoparticles (NPs) (Jiang and Zhu 2007; Cao et al. 2008a, b) ... als, semimetals, alloys and other compounds (Chen and ..... Cao Y Q, Zhao X B, Zhu T J, Zhang X B and Tu J P 2008a Appl. Phys.

  8. Microstructure of absorber layers in CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Cousins, M.A.

    2001-04-01

    This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl 2 may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change does occur on heating the material, enhanced by the inclusion of CdCl 2 flux. However, the temperature required to cause significant effects is demonstrated to be higher than that at which heavy oxidation takes place. The dynamics of this oxidation are also examined. To investigate microstructural evolution in thin-films of CdTe, bi-layers of CdTe and CdS are examined by bevelling, thus revealing the microstructure to within ∼1 μm of the interface. This allows optical microscopy and subsequent image analysis of grain structure. The work shows that the grain-size, which is well described by the Rayleigh distribution, varies linearly throughout the layer, but is invariant under CdCl 2 treatment. Electrical measurements on these bi-layers, however, showed increased efficiency, as is widely reported. This demonstrates that the efficiency of these devices is not dictated by the bulk microstructure. Further, the region within 1 μm of the interface, of similar bi-layers to above, is examined by plan-view TEM. This reveals five-fold grain-growth on CdCl 2 treatment. Moreover, these grains show a considerably smaller grain size than expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl 2 treatment provided the first direct evidence of recovery on CdCl 2 treatment in this system. Finally, a computer model is presented to describe the evolution of

  9. Exploratory Bi-factor Analysis: The Oblique Case

    OpenAIRE

    Jennrich, Robert L.; Bentler, Peter M.

    2011-01-01

    Bi-factor analysis is a form of confirmatory factor analysis originally introduced by Holzinger and Swineford (1937). The bi-factor model has a general factor, a number of group factors, and an explicit bi-factor structure. Jennrich and Bentler (2011) introduced an exploratory form of bi-factor analysis that does not require one to provide an explicit bi-factor structure a priori. They use exploratory factor analysis and a bi-factor rotation criterion designed to produce a rotated loading mat...

  10. Sodium citrate-assisted anion exchange strategy for construction of Bi2O2CO3/BiOI photocatalysts

    International Nuclear Information System (INIS)

    Song, Peng-Yuan; Xu, Ming; Zhang, Wei-De

    2015-01-01

    Highlights: • Heterostructured Bi 2 O 2 CO 3 /BiOI microspheres were prepared via anion exchange. • Sodium citrate-assisted anion exchange for construction of composite photocatalysts. • Bi 2 O 2 CO 3 /BiOI composites show high visible light photocatalytic activity. - Abstract: Bi 2 O 2 CO 3 /BiOI heterojuncted photocatalysts were constructed through a facile partial anion exchange strategy starting from BiOI microspheres and urea with the assistance of sodium citrate. The content of Bi 2 O 2 CO 3 in the catalysts was regulated by modulating the amount of urea as a precursor, which was decomposed to generate CO 3 2− in the hydrothermal process. Citrate anion plays a key role in controlling the morphology and composition of the products. The Bi 2 O 2 CO 3 /BiOI catalysts display much higher photocatalytic activity than pure BiOI and Bi 2 O 2 CO 3 towards the degradation of rhodamine B (RhB) and bisphenol A (BPA). The enhancement of photocatalytic activity of the heterojuncted catalysts is attributed to the formation of p–n junction between p-BiOI and n-Bi 2 O 2 CO 3 , which is favorable for retarding the recombination of photoinduced electron-hole pairs. Moreover, the holes are demonstrated to be the main active species for the degradation of RhB and BPA

  11. Forenzika elektronske pošte

    Directory of Open Access Journals (Sweden)

    Milorad S. Markagić

    2013-10-01

    ešće obavlja putem instant poruka. Radnici u okviru firme međusobno razgovaraju instant porukama, a veoma se često koriste i za lične međusobne razgovore. Osobe međusobno razmenjuju poruke koje putuju preko servera, a princip rada skoro je identičan kao princip rada elektronske pošte, sa osnovnom razlikom, da se odvija u realnom vremenu. Zaključak Današnja tehnologija omogućava promenu i manipulaciju digitalnim medijem na načine koji su pre nekoliko godina bili nemogući. Buduća tehnologija gotovo će sigurno omogućiti manipulacije digitalnih medija na način koji se danas čini nemogućim. Kako tehnologija nastavlja svoju evoluciju, biće sve važnije da  digitalna forenzika održi korak sa tim razvojem. Kako se razvijaju tehnike i metode za otkrivanje računarskih prevara, razvijaće se i nove sofisticiranije metode izrade falsifikata koje će biti teže otkriti. 

  12. Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

    International Nuclear Information System (INIS)

    Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

    2014-01-01

    Multiferroic Bismuth Ferrite (BiFeO 3 ) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO 3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO 3 and Fe 2 O 3 to pure BiFeO 3 phase and, subsequently, to a mixture of BiFeO 3 and Bi 2 O 3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO 3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe 2 O 3 ). Deterioration in ferroic properties of BiFeO 3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO 3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm 2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO 3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO 3 thin films exhibiting the improved multiferroic properties.

  13. Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Surbhi; Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi (India); Tomar, Monika [Department of Physics, Miranda Housea, University of Delhi, Delhi (India); James, A. R. [Defence Metallurgical Research Laboratory, Hyderabad (India); Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar [Department of Electrical and Computer Engineering, College of Engineering, University of Texas at SanAntonio, San Antonio 78249 (United States)

    2014-06-21

    Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

  14. Comprehensive thermodynamic description of the quasiternary system PbTe-GeTe-SnTe

    International Nuclear Information System (INIS)

    Yashina, Lada V.; Leute, Volkmar; Shtanov, Vladimir I.; Schmidtke, Heinrich M.; Neudachina, Vera S.

    2006-01-01

    The equilibrium phase diagram of the quasiternary system PbTe-GeTe-SnTe was studied experimentally in the ranges of spinodal demixing and (solid + liquid) equilibrium by means of X-ray diffraction (XRD), electron microprobe analysis (EMA) and differential thermal analysis (DTA). A model description of the phase diagram was done on the base of composition dependent interaction parameters, which were determined for the solid and the liquid phases. The interaction parameters for the quasibinary systems were recalculated in order to reach better correlation between all experimental data. It was shown that the quasiternary phase diagram can be principally described using the interaction parameters for the quasibinary subsystems, but an additional ternary interaction parameter has also to be considered. The local structure of the quasiternary solid solution is described by a four-particle cluster model. Due to the tendency of the solid solution to demix, the probability of the (GeGeGe)Te cluster was found to be higher and that of the (PbGeGe)Te cluster to be lower than it is expected for the purely statistical distribution of the clusters

  15. M rate at TE. Monitoring at TeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Dorner, Daniela [Universitaet Wuerzburg (Germany); Bretz, Thomas [RWTH Aachen (Germany); Gonzalez, Magdalena; Alfaro, Ruben [Universidad Nacional Autonoma de Mexico (Mexico); Tovmassian, Gagik [Instituto de Astronomia Sede Ensenada (Mexico)

    2016-07-01

    A dedicated long-term monitoring programm at TeV energies has been started by the FACT project about four years ago. Being limited to one site, gaps due to the rotation of the Earth remain in the measured light curves. This makes it difficult to study typical variability time scales of few hours to one day. To allow for systematic studies of continuous observations over up to 12 hours, a second telescope is being installed at a site in about six hours distance in longitude. For the M rate at TE (Monitoring at TeV energies) telescope, a mount from a previous experiment is being refurbished and will be equipped with a new camera. Using silicon based photo sensors like in FACT, an excellent and stable performance will be achieved. M rate at TE is a joint project of German and Mexican universities which aims at extending the blazar monitoring to so far unexplored time ranges. In the presentation, the status of this emerging project is reported.

  16. Processing Y- and Bi-based superconductors

    International Nuclear Information System (INIS)

    Balachandran, U.; Dos Santos, D.I.; von Stumberg, A.W.; Graham, S.W.; Singh, J.P.; Youngdahl, C.A.; Goretta, K.C.; Shi, D.; Poeppel, R.B.

    1989-01-01

    This paper reports on bulk specimens of YBa 2 Cu 3 O x and Bi 2 Sr 2 CaCu 2 O y formed and then processed by sintering in the solid state, in the presence of a liquid phase, or by sinter forging. Both Y- and Bi-based superconductors are difficult to densify by solid-state sintering but easy to densify in the presence of a liquid phase. Effects of sintering conditions on superconducting properties are, however, different between the two materials. These differences will be discussed. Attempts to texture microstructures and increase J c by sinter-forging techniques have been successful for Y-based superconductors, but unsuccessful for Bi-based superconductors

  17. Topotactic synthesis of a new BiS2-based superconductor Bi2(O,F)S2

    OpenAIRE

    Okada, Tomoyuki; Ogino, Hiraku; Shimoyama, Jun-ichi; Kishio, Kohji

    2015-01-01

    A new BiS2-based superconductor Bi2(O,F)S2 was discovered. This is a layered compound consisting of alternate stacking structure of rock-salt-type BiS2 superconducting layer and fluorite-type Bi(O,F) blocking layer. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2, which is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis length increased and decreased, respe...

  18. Topotactic synthesis of a new BiS2-based superconductor Bi2(O,F)S2

    Science.gov (United States)

    Okada, Tomoyuki; Ogino, Hiraku; Shimoyama, Jun-ichi; Kishio, Kohji

    2015-02-01

    A new BiS2-based superconductor, Bi2(O,F)S2, was discovered. It is a layered compound consisting of alternately stacked structure of rock-salt-type BiS2 superconducting layers and fluorite-type Bi(O,F) blocking layers. Bi2(O,F)S2 was obtained as the main phase by topotactic fluorination of undoped Bi2OS2 using XeF2. This is the first topotactic synthesis of an electron-doped superconductor via reductive fluorination. With increasing F-content, a- and c-axis lengths increased and decreased, respectively, and Tc increased to 5.1 K.

  19. In-situ synthesis of nanofibers with various ratios of BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z} for effective trichloroethylene photocatalytic degradation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yifan [Department of Chemistry, Inha University, 100 Inharo, Incheon 402-751 (Korea, Republic of); Park, Mira [Department of Organic Materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong [Department of BIN Convergence Technology, Chonbuk National University, Jeonju, 561-756 (Korea, Republic of); Ding, Bin [College of Textiles, Donghua University, Shanghai 201620 (China); Park, Soo-Jin, E-mail: sjpark@inha.ac.kr [Department of Chemistry, Inha University, 100 Inharo, Incheon 402-751 (Korea, Republic of)

    2016-10-30

    Highlights: • BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z}/PAN fibers were synthesized by in-situ method. • Photodegradation behavior of BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z}/PAN fibers was measured under solar light irradiation. • BiOCl{sub 0.3}/BiOBr{sub 0.3}/BiOI{sub 0.4}/PAN fibers exhibited the highest photocatalytic activity. • Photocatalytic mechanism was discussed in detail. - Abstract: In this work, BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z} (x + y + z = 1) composite nanofibers were prepared through electrospinning and the sol-gel methods. Photocatalytic degradation of trichloroethylene (TCE) by BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z}/PAN nanofibers was systematically investigated via gas chromatography (GC). Optimum photocatalytic activity was achieved with BiOCl{sub 0.3}/BiOBr{sub 0.3}/BiOI{sub 0.4} fibers under solar light irradiation. X-ray photoelectron spectroscopy (XPS) peaks due to C−O and C=O were observed at 286.0 and 288.3 eV, respectively, it indicated that the BiOCl{sub x}/BiOBr{sub y}/BiOI{sub z} mixture had been successfully doped on the polyacrylonitrile (PAN) fibers. Furthermore, X-ray diffraction (XRD) results also confirmed that we had synthesized the as-prepared composite nanofibers successfully. Photocatalytic activities of BiOCl{sub 0.3}/BiOBr{sub 0.3}/BiOI{sub 0.4} were up to 3 times higher than the pure BiOCl, BiOBr and BiOI samples, respectively.

  20. Considerations about using OLAP Cubes and Self-Service BI Tools for BI Systems’ Development

    Directory of Open Access Journals (Sweden)

    Gianina MIHAI

    2017-12-01

    Full Text Available Nowadays, the decision-making process must be an extremely fast one. This is why any decision-maker in a company must obtain information from the multiple available data source used in its transactional systems as easily and as quickly as possible. Business Intelligence (BI systems are the ones that provide the tools necessary for obtaining this information. In this article, we shall present the strengths and weaknesses regarding data analyses in a BI system using OLAP cubes and self-service BI tools.

  1. Quantum interference effects in [Co/Bi]n thin films

    Directory of Open Access Journals (Sweden)

    Athanasopoulos P.

    2014-07-01

    Full Text Available Magnetoconductivity (MC, Δσ(Β, and Hall coefficient, RH(B, measurements have been performed in polycrystalline thin films of Bi(15nm, Bi(10nm/Co(1nm/Bi(10nm trilayer and [Co(0.7nm/Bi(2nm]10 multilayer, grown by magnetron scattering. The temperature dependence of RH(B curves reveal the existence of a second conduction channel below 250K, that can be assigned to surface states. MC measurements between ±0.4T show at 5K an interplay between weak-antilocalization (WAL in Bi and Bi/Co/Bi films and weal-localization (WL in [Co/Bi]10 multilayer.

  2. BI-AMALGAMATION OF SMALL WEAK GLOBAL DIMENSION

    OpenAIRE

    Tamekkante, Mohammed; Bouba, El Mehdi

    2017-01-01

    In this paper, we characterize the bi-Amalgamations of small weakglobal dimension. The new results compare to previous works carried on varioussettings of duplications and amalgamations, and capitalize on recent resultson bi-amalgamations

  3. Te hard van stapel gelopen.

    NARCIS (Netherlands)

    W-J. Verhoeven (Willem-Jan)

    2008-01-01

    textabstractHoe goed we ook trachten de samenleving te organiseren, fraude maakt er deel van uit. Dit blijkt uit spraakmakende grote schandalen zoals de Enron-zaak, de Bouwfraude-zaak en de Nigerian letter scams. Maar fraude komt ook op minder geruchtmakende schaal voor, zoals oplichting op

  4. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  5. Desorption of Te capping layer from ZnTe (100): Auger spectroscopy ...

    African Journals Online (AJOL)

    ... configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. Keywords: Zinc Tellure; solar cells; structural properties; optoelectronics; semiconductors.

  6. S and Te inter-diffusion in CdTe/CdS hetero junction

    Energy Technology Data Exchange (ETDEWEB)

    Enriquez, J. Pantoja [Cuerpo Academico-Energia y Sustentabilidad, Universidad Politecnica de Chiapas, Eduardo J. Selvas S/N, Col. Magisterial, Tuxtla Gutierrez 29010, Chiapas (Mexico); Gomez Barojas, E. [CIDS-ICUAP, Apdo. Postal 1651, 72000 Puebla (Mexico); Silva Gonzalez, R.; Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

    2007-09-22

    Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe{sub 1-x}S{sub x} ternary compound at the CdTe-CdS interface. (author)

  7. Near-infrared emission bands of TeH and TeD

    Science.gov (United States)

    Fink, E. H.; Setzer, K. D.; Ramsay, D. A.; Vervloet, M.

    1989-11-01

    High-resolution emission spectra of TeH and TeD have been obtained in the region 4200 to 3600 cm -1 using a Bomem DA3.002 Fourier transform spectrometer. Analyses are given for the 0-0 and 1-1 bands of the X 22Π{1}/{2}-X 12Π{3}/{2} system of TeH and for the 0-0 band of TeD. In addition the 2-0 vibrational overtone bands of 130TeH, 128TeH, and 126TeH are observed and analyzed. Accurate molecular constants are given for the first time.

  8. Study of Te Inclusions in CdMnTe Crystals for Nuclear Detector Applications

    International Nuclear Information System (INIS)

    Babalola, O.S.; Bolotnikov, A.; Groza, M.; Hossain, A.; Egarievwe, S.; James, R.; Burger, A.

    2009-01-01

    The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.

  9. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe

    International Nuclear Information System (INIS)

    Tomashik, Z.F.; Tomashik, V.N.

    1987-01-01

    Using differential-thermal and microstructural analyses and mathematical design interaction in PbTe-CdS system is studied. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe is plotted. It is shown that PbTe-CdS system phase diagram is of eutectic type. Maximal solubility of CdS in PbTe attains 13 mol%, and of PbTe in CdS is not over 1 mol%. Projection of liquidus surface of the PbTe+CdS↔PbS+CdTe triple reciprocal system consists of two primary crystallization fields: CdTe x S 1-x and PbTe x S 1-x solid solutions separated by eutectic line

  10. Bi3+–Pr3+ energy transfer processes and luminescent properties of LuAG:Bi,Pr and YAG:Bi,Pr single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Nikl, M.; Mares, J.A.; Beitlerova, A.; Jary, V.

    2013-01-01

    Absorption, cathodoluminescence, excitation spectra of photoluminescence (PL) and PL decay kinetics were studied at 300 K for the double doped with Bi 3+ –Pr 3+ and separately doped with Bi 3+ and Pr 3+ Lu 3 Al 5 O 12 (LuAG) and Y 3 Al 5 O 12 (YAG) single crystalline film (SCF) phosphors grown by the liquid phase epitaxy method. The emission bands in the UV range arising from the intrinsic radiative transitions of Bi 3+ based centers, and emission bands in the visible range, related to the luminescence of excitons localized around Bi 3+ based centers, were identified both in Bi–Pr and Bi-doped LuAG and YAG SCFs. The energy transfer processes from the host lattice simultaneously to Bi 3+ and Pr 3+ ions and from Bi 3+ to Pr 3+ ions were investigated. Competition between Pr 3+ and Bi 3+ ions in the energy transfer processes from the LuAG and YAG hosts was evidenced. The strong decrease of the intensity of Pr 3+ luminescence both in LuAG:Pr and YAG:Pr SCFs phosphors, grown from Bi 2 O 3 flux, is observed due to the quenching influence of Bi 3+ flux related impurity. Due to overlap of the UV emission band of Bi 3+ centers with the f–d absorption bands of Pr 3+ ions in the UV range and the luminescence of excitons localized around Bi ions with the f–f absorption bands of Pr 3+ ions in the visible range, an effective energy transfer from Bi 3+ ions to Pr 3+ ions takes place in LuAG:Bi,Pr and YAG:Bi,Pr SCFs, resulting in the appearance of slower component in the decay kinetics of the Pr 3+ d–f luminescence. -- Highlights: • Bi and Pr doped film phosphor grown by liquid phase epitaxy method. • Energy transfer from Bi 3+ to Pr 3+ ions. • Strong quenching of the Pr 3+ luminescence by Bi 3+ co-dopant

  11. Factors Influencing BI Data Collection Strategies: An Empirical Investigation

    Science.gov (United States)

    Ramakrishnan, Thiagarajan

    2010-01-01

    The purpose of this dissertation is to examine the external factors that influence an organizations' business intelligence (BI) data collection strategy when mediated by BI attributes. In this dissertation, data warehousing strategies are used as the basis on which to frame the exploration of BI data collection strategies. The attributes include…

  12. Preparation and Faraday rotation of Bi-YIG/PMMA nanocomposite

    Science.gov (United States)

    Fu, H. P.; Hong, R. Y.; Wu, Y. J.; Di, G. Q.; Xu, B.; Zheng, Y.; Wei, D. G.

    Bismuth-substituted yttrium iron garnet (Bi-YIG) nanoparticles (NPs) were prepared by coprecipitation and subsequent heating treatment. Thermal gravity-differential thermal analysis was performed to investigate the thermal behavior of the Bi-YIG precursors and to decide the best annealing temperature. Phase formation of garnet NPs was investigated by X-ray powder diffraction. The size of Bi-YIG NPs was investigated by transmission electron microscopy, and the magnetic properties of Bi-YIG NPs were measured using a vibrating sample magnetometer. The results show that the temperature needed for the transformation of Bi-YIG from the amorphous phase to the garnet phase decreases with increasing Bi content, and Bi-YIG NPs with sizes of 28-78 nm are obtained after heating treatment at 650-1000 °C. The saturation magnetization of Bi-YIG NPs increases as the Bi content increases. Moreover, the Faraday rotation of polymethyl methacrylate (PMMA) slices doped with Bi-YIG NPs was investigated. The results indicate that the angle of Faraday rotation increases with increasing Bi content in PMMA composites, and the maximum value of the figure of merit is 1.46°, which is comparable to the value of a sputtered film. The Bi-YIG NPs-doped PMMA slices are new promising materials for magneto-optical devices.

  13. The Crystal Structure of Cu4Bi4Se9

    DEFF Research Database (Denmark)

    Makovicky, E.; Søtofte, Inger; Karup-Møller, S.

    2002-01-01

    contains three square pyramidal Bi sites, an octahedrally coordinated Bi site as well as two tetrahedrally and two irregularly coordinated Cu sites. The structure is an intergrowth of PbS-like slabs with irregularly configured slabs of Bi pyramids and Cu tetrahedra. It contains covalently bonded Se-2...

  14. High photocatalytic performance of BiOI/Bi{sub 2}WO{sub 6} toward toluene and Reactive Brilliant Red

    Energy Technology Data Exchange (ETDEWEB)

    Li Huiquan [School of Chemistry and Chemical Engineering, Fuyang Normal College, Fuyang 236041 (China); Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Key Laboratory of Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Cui Yumin, E-mail: cuiyumin0908@163.com [School of Chemistry and Chemical Engineering, Fuyang Normal College, Fuyang 236041 (China); Hong Wenshan [School of Chemistry and Chemical Engineering, Fuyang Normal College, Fuyang 236041 (China)

    2013-01-01

    Graphical abstract: When BiOI/Bi{sub 2}WO{sub 6} catalyst was exposed to UV or visible light, the electrons in the valence band of Bi{sub 2}WO{sub 6} would be excited into the conduction band and then injected into the more positive conduction band of BiOI. Therefore, the photoelectrons were generated from Bi{sub 2}WO{sub 6} and transferred across the interface between BiOI and Bi{sub 2}WO{sub 6} to the surface of BiOI, leaving the photogenerated holes in the valence band of Bi{sub 2}WO{sub 6}. In this way, the photoinduced electron-hole pairs were effectively separated. Highlights: Black-Right-Pointing-Pointer BiOI sensitized Bi{sub 2}WO{sub 6} catalysts were successfully prepared by a facile method. Black-Right-Pointing-Pointer The 13.2% BiOI/Bi{sub 2}WO{sub 6} catalyst exhibits higher photoactivities than P25. Black-Right-Pointing-Pointer A possible transfer process of photogenerated carriers was proposed. - Abstract: BiOI sensitized nano-Bi{sub 2}WO{sub 6} photocatalysts with different BiOI contents were successfully synthesized by a facile deposition method at room temperature, and characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) high-resolution transmission electron microscopy (HR-TEM), photoluminescence (PL) spectra, UV-vis diffuse reflection spectroscopy (UV-vis DRS) and Brunauer-Emmett-Teller (BET) surface area measurements. The photocatalytic activity of BiOI/Bi{sub 2}WO{sub 6} was evaluated by the photo-degradation of Reactive Brilliant Red (X-3B) in suspended solution and toluene in gas phase. It has been shown that the BiOI/Bi{sub 2}WO{sub 6} catalysts exhibit a coexistence of both tetragonal BiOI and orthorhombic Bi{sub 2}WO{sub 6} phases. With increasing BiOI content, the absorption intensity of BiOI/Bi{sub 2}WO{sub 6} catalysts increases in the 380-600 nm region and the absorption edge shifts significantly to longer wavelengths as compared to pure Bi{sub 2}WO{sub 6}. The 13.2% BiOI/Bi{sub 2}WO{sub 6} catalyst exhibits

  15. Role of vanadium in Bi-2223 ceramics

    Indian Academy of Sciences (India)

    Previous reports ([1–7] and also, [9]) on V-substituted samples of Bi2Sr2Ca2Cu3Os have mostly pointed out that V ... Two series of V-substituted samples were prepared by partial replacement of V at two different sites; viz. the ..... also evaluated the phase composition on the basis of our susceptibility plots. This has also.

  16. Business Intelligence: Magnum B.I.

    Science.gov (United States)

    Briggs, Linda L.

    2007-01-01

    Business intelligence (BI) tools offer schools the ability to look beyond a routine statistic, such as what percentage of students have passed a given test. Through data analysis, schools can view specific scores for a select group of students, for example, and compare that data to other groups, classes, or teachers. That is the kind of…

  17. A scanning bi-static SODAR

    Energy Technology Data Exchange (ETDEWEB)

    Behrens, P; Bradley, S [Physics Department, Auckland University, 38 Princes Street, Auckland (New Zealand); Hunerbein, S von [Acoustics Department, Newton Building, University of Salford, Greater Manchester M5 4WT (United Kingdom)

    2008-05-01

    Field results are given from a bi-static SODAR which uses a single central vertical transmission and three distributed microphone array receivers. Fourier transform delay methods are applied to data sampled from each microphone to retrospectively scan in angle and follow the transmitted pulse. Advantages of sampling a narrow atmospheric column, rather than distributed volumes are discussed.

  18. A scanning bi-static SODAR

    International Nuclear Information System (INIS)

    Behrens, P; Bradley, S; Hunerbein, S von

    2008-01-01

    Field results are given from a bi-static SODAR which uses a single central vertical transmission and three distributed microphone array receivers. Fourier transform delay methods are applied to data sampled from each microphone to retrospectively scan in angle and follow the transmitted pulse. Advantages of sampling a narrow atmospheric column, rather than distributed volumes are discussed

  19. Method of producing superconducting fibers of bismuth strontium calcium copper oxide (Bi(2212) and Bi(2223))

    Science.gov (United States)

    Schwartzkopf, Louis A.

    1991-10-01

    Fibers of Bi(2212) have been produce by pendant drop melt extraction. This technique involves the end of a rod of Bi(2212) melted with a hydrogen-oxygen torch, followed by lowering onto the edge of a spinning wheel. The fibers are up to 15 cm in length with the usual lateral dimensions, ranging from 20 um to 30 um. The fibers require a heat treatment to make them superconducting.

  20. DIALIGN: multiple DNA and protein sequence alignment at BiBiServ.

    OpenAIRE

    Morgenstern, Burkhard

    2004-01-01

    DIALIGN is a widely used software tool for multiple DNA and protein sequence alignment. The program combines local and global alignment features and can therefore be applied to sequence data that cannot be correctly aligned by more traditional approaches. DIALIGN is available online through Bielefeld Bioinformatics Server (BiBiServ). The downloadable version of the program offers several new program features. To compare the output of different alignment programs, we developed the program AltA...

  1. Solution Grown Se/Te Nanowires: Nucleation, Evolution, and The Role of Triganol Te seeds

    Directory of Open Access Journals (Sweden)

    Shan Xudong

    2009-01-01

    Full Text Available Abstract We have studied the nucleation and growth of Se–Te nanowires (NWs, with different morphologies, grown by a chemical solution process. Through systematic characterization of the Se–Te NW morphology as a function of the Te nanocrystallines (NCs precursor, the relative ratio between Se and Te, and the growth time, a number of significant insights into Se–Te NW growth by chemical solution processes have been developed. Specifically, we have found that: (i the growth of Se–Te NWs can be initiated from either long or short triganol Te nanorods, (ii the frequency of proximal interactions between nanorod tips and the competition between Se and Te at the end of short Te nanorods results in V-shaped structures of Se–Te NWs, the ratio between Se and Te having great effect on the morphology of Se–Te NWs, (iii by using long Te nanorods as seeds, Se–Te NWs with straight morphology were obtained. Many of these findings on Se–Te NW growth can be further generalized and provide very useful information for the rational synthesis of group VI based semiconductor NW compounds.

  2. Electrical properties of MIS devices on CdZnTe/HgCdTe

    Science.gov (United States)

    Lee, Tae-Seok; Jeoung, Y. T.; Kim, Hyun Kyu; Kim, Jae Mook; Song, Jinhan; Ann, S. Y.; Lee, Ji Y.; Kim, Young Hun; Kim, Sun-Ung; Park, Mann-Jang; Lee, S. D.; Suh, Sang-Hee

    1998-10-01

    In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.

  3. Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

    Science.gov (United States)

    Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

  4. Novel condensation of Au-centered trigonal prisms in rare-earth-metal-rich tellurides: Er7Au2Te2 and Lu7Au2Te2.

    Science.gov (United States)

    Gupta, Shalabh; Corbett, John D

    2010-07-14

    A new monoclinic structure occurs for Er(7)Au(2)Te(2) according to X-ray diffraction analysis of single crystals grown at 1200 degrees C: C2/m, Z = 4, a = 17.8310(9) A, b = 3.9819(5) A, c = 16.9089(9) A, beta = 104.361(4) degrees. The isostructural Lu(7)Au(2)Te(2) also exists according to X-ray powder pattern means, a = 17.536(4) A, b = 3.9719(4) A, c = 16.695(2) A, beta = 104.33(1) degrees. The structure contains zigzag chains of condensed, Au-centered tricapped trigonal prisms (TCTP) of Er along c that also share basal faces along b to generate puckered sheets. Further bi-face-capping Er atoms between these generate the three dimensional network along a, with tellurium in cavities outlined by augmented trigonal prismatic Er polyhedra. Bonding analysis via LMTO-DFT methods reveal very significant Er-Au bonding interactions, as quantified by their energy-weighted Hamilton overlap populations (-ICOHP), approximately 49% of the total for all interactions. These and similar Er-Te contributions sharply contrast with the small Er-Er population, only approximately 14% of the total in spite of the high proportion of Er-Er contacts. The strong polar bonding of Er to the electronegative Au and Te leaves Er relatively oxidized, with many of its 5d states falling above the Fermi level and empty. The contradiction with customary representations of structures that highlight rare-earth metal clusters is manifest. The large Er-Au Hamilton overlap population is in accord with the strong bonding between early and late transition metals first noted by Brewer in 1973. The relationship of this structure to the more distorted orthorhombic (Imm2) structure type of neighboring Dy(7)Ir(2)Te(2) is considered.

  5. Thermochemical properties of silver tellurides including empressite (AgTe) and phase diagrams for Ag-Te and Ag-Te-O

    Science.gov (United States)

    Voronin, Mikhail V.; Osadchii, Evgeniy G.; Brichkina, Ekaterina A.

    2017-10-01

    This study compiles original experimental and literature data on the thermodynamic properties (ΔfG°, S°, ΔfH°) of silver tellurides (α-Ag2Te, β-Ag2Te, Ag1.9Te, Ag5Te3, AgTe) obtained by the method of solid-state galvanic cell with the RbAg4I5 and AgI solid electrolytes. The thermodynamic data for empressite (AgTe, pure fraction from Empress Josephine Mine, Colorado USA) have been obtained for the first time by the electrochemical experiment with the virtual reaction Ag + Te = AgTe. The Ag-Te phase diagrams in the T - x and log fTe2 (gas) - 1/ T coordinates have been refined, and the ternary Ag-Te-O diagrams with Ag-Te-TeO2 (paratellurite) composition range have been calculated.

  6. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  7. Fuzzy Bi-level Decision-Making Techniques: A Survey

    Directory of Open Access Journals (Sweden)

    Guangquan Zhang

    2016-04-01

    Full Text Available Bi-level decision-making techniques aim to deal with decentralized management problems that feature interactive decision entities distributed throughout a bi-level hierarchy. A challenge in handling bi-level decision problems is that various uncertainties naturally appear in decision-making process. Significant efforts have been devoted that fuzzy set techniques can be used to effectively deal with uncertain issues in bi-level decision-making, known as fuzzy bi-level decision-making techniques, and researchers have successfully gained experience in this area. It is thus vital that an instructive review of current trends in this area should be conducted, not only of the theoretical research but also the practical developments. This paper systematically reviews up-to-date fuzzy bi-level decisionmaking techniques, including models, approaches, algorithms and systems. It also clusters related technique developments into four main categories: basic fuzzy bi-level decision-making, fuzzy bi-level decision-making with multiple optima, fuzzy random bi-level decision-making, and the applications of bi-level decision-making techniques in different domains. By providing state-of-the-art knowledge, this survey paper will directly support researchers and practitioners in their understanding of developments in theoretical research results and applications in relation to fuzzy bi-level decision-making techniques.

  8. Internal friction behavior of liquid Bi-Sn alloys

    International Nuclear Information System (INIS)

    Wu Aiqing; Guo Lijun; Liu Changsong; Jia Erguang; Zhu Zhengang

    2005-01-01

    Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480 - bar Cand another at about 830 - bar C. Only a single internal-friction peak at about 830 - bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids

  9. Internal friction behavior of liquid Bi-Sn alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu Aiqing [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Guo Lijun [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu Changsong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Jia Erguang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)]. E-mail: zgzhu@issp.ac.cn

    2005-12-01

    Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480{sup -}bar Cand another at about 830{sup -}bar C. Only a single internal-friction peak at about 830{sup -}bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids.

  10. TE Wave Measurement and Modeling

    CERN Document Server

    Sikora, John P; Sonnad, Kiran G; Alesini, David; De Santis, Stefano

    2013-01-01

    In the TE wave method, microwaves are coupled into the beam-pipe and the effect of the electron cloud on these microwaves is measured. An electron cloud (EC) density can then be calculated from this measurement. There are two analysis methods currently in use. The first treats the microwaves as being transmitted from one point to another in the accelerator. The second more recent method, treats the beam-pipe as a resonant cavity. This paper will summarize the reasons for adopting the resonant TE wave analysis as well as give examples from CESRTA and DA{\\Phi}NE of resonant beam-pipe. The results of bead-pull bench measurements will show some possible standing wave patterns, including a cutoff mode (evanescent) where the field decreases exponentially with distance from the drive point. We will outline other recent developments in the TE wave method including VORPAL simulations of microwave resonances, as well as the simulation of transmission in the presence of both an electron cloud and magnetic fields.

  11. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  12. Facile synthesis of BiOF/Bi{sub 2}O{sub 3}/reduced graphene oxide photocatalyst with highly efficient and stable natural sunlight photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Limin; Dong, Shuying; Li, Qilu; Feng, Jinglan; Pi, Yunqing; Liu, Menglin [School of Environment, Henan Normal University, Key Laboratory for Yellow River and Huai River Water Environmental and Pollution Control, Ministry of Education, Henan Key Laboratory for Environmental Pollution Control, Xinxiang, Henan 453007 (China); Sun, Jingyu, E-mail: sunjy-cnc@pku.edu.cn [Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Sun, Jianhui, E-mail: sunjh@htu.cn [School of Environment, Henan Normal University, Key Laboratory for Yellow River and Huai River Water Environmental and Pollution Control, Ministry of Education, Henan Key Laboratory for Environmental Pollution Control, Xinxiang, Henan 453007 (China)

    2015-06-05

    Highlights: • A dual Bi-based ball-shaped material BiOF/Bi{sub 2}O{sub 3} were facilely synthesized. • The composition effect of BiOF/Bi{sub 2}O{sub 3}/RGO hybrid were probed for the first time. • The photocatalytic performances were evaluated upon natural sunlight irradiation. • The composites showed a twofold augmentation in the degradation efficiency. • The hybrid photocatalyst can be easily recycled for three times. - Abstract: A facile and efficient route for the controllable synthesis of BiOF/Bi{sub 2}O{sub 3} nanostructures by hydrolysis method was reported, where the as-prepared BiOF/Bi{sub 2}O{sub 3} was subsequently incorporated with reduced graphene oxide (RGO) sheets to form BiOF/Bi{sub 2}O{sub 3}/RGO composites. The obtained BiOF/Bi{sub 2}O{sub 3} and BiOF/Bi{sub 2}O{sub 3}/RGO composites were well characterized with the aid of various techniques to probe their crystallographic, morphological, chemical and optical properties. Photocatalytic capacities of the pure BiOF/Bi{sub 2}O{sub 3} and BiOF/Bi{sub 2}O{sub 3}/RGO composites have been investigated by the degradation of Rhodamine B (RhB)-contained wastewater under natural sunlight irradiation. A twofold augmentation of degradation efficiency was in turn observed for BiOF/Bi{sub 2}O{sub 3}/RGO composites compared with that of pure BiOF/Bi{sub 2}O{sub 3} under the natural sunlight irradiation. The optimum conditions, the effects of the active species and stabilities in photocatalytic performances of the BiOF/Bi{sub 2}O{sub 3}/RGO composites have also been probed.

  13. Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells

    International Nuclear Information System (INIS)

    Andre, Regis

    1994-01-01

    Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large

  14. Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)

    2015-09-21

    Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

  15. Magnetothermoelectric properties of Bi2Se3

    Science.gov (United States)

    Fauqué, Benoît; Butch, Nicholas P.; Syers, Paul; Paglione, Johnpierre; Wiedmann, Steffen; Collaudin, Aurélie; Grena, Benjamin; Zeitler, Uli; Behnia, Kamran

    2013-01-01

    We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitatively tracks the Fermi temperature of the three-dimensional Fermi surface at the Γ point as the carrier concentration changes by two orders of magnitude (1017 to 1019 cm-3). In high magnetic fields, the Nernst response displays giant quantum oscillations indicating that this feature is not exclusive to compensated semimetals. A comprehensive analysis of the Landau level spectrum firmly establishes a large g factor in this material and a substantial decrease of the Fermi energy with increasing magnetic field across the quantum limit. Thus, the presence of bulk carriers significantly affects the spectrum of the intensively debated surface states in Bi2Se3 and related materials.

  16. A bi-metric theory of gravitation

    International Nuclear Information System (INIS)

    Rosen, N.

    1975-01-01

    The bi-metric theory of gravitation proposed previously is simplified in that the auxiliary conditions are discarded, the two metric tensors being tied together only by means of the boundary conditions. Some of the properties of the field of a particle are investigated; there is no black hole, and it appears that no gravitational collapse can take place. Although the proposed theory and general relativity are at present observationally indistinguishable, some differences are pointed out which may some day be susceptible of observation. An alternative bi-metric theory is considered which gives for the precession of the perihelion 5/6 of the value given by general relativity; it seems less satisfactory than the present theory from the aesthetic point of view. (author)

  17. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  18. Neutrino bi-large mixings and family

    International Nuclear Information System (INIS)

    Bando, Masako; Obara, Midori

    2004-01-01

    After a brief review of quark-lepton relations in grand unified theories (GUT), we show that the Pati-Salam relation with only one type of Higgs field configuration with ''four zero symmetric texture'' can reproduce two large neutrino mixings as well as observed mass differences. This is quite in contrast to the case of SU(5) where bi-large mixings essentially come from the charged lepton sector with non-symmetric charged lepton mass matrix. (author)

  19. Social BI. Trends and development needs

    Directory of Open Access Journals (Sweden)

    Corneliu Mihai PREDA

    2014-12-01

    Full Text Available This paper tries to show that the need to implement BI solutions that integrate social networks data is increasingly more acute. Companies need to understand that efficient decision making has to take into account the importance that social medial has nowadays. In addition, the software developing companies have to keep up to date with new trends generated within these communication channels and adapt their solutions to this dynamic environment.

  20. The effect of oxidant on resputtering of Bi from Bi-Sr-Ca-Cu-O films

    Science.gov (United States)

    Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

    1991-09-01

    The type and partial pressure of oxidant mixed with argon can affect the selective resputtering of Bi in composite-target, magnetron-sputtered Bi-Sr-Ca-Cu-O films. Comparative studies using oxygen and ozone show that ozone is a more potent oxidant, as well as a more potent source of resputterers, than is oxygen. Severe resputtering from ozone is significantly reduced by a -40 V potential on the sample block. We suggest that oxygen causes resputtering by forming O2(+)p , which interacts with the target to produce energetic O(-). In contrast, ozone may form lower-energy O(-) by electron impact in the dark space. Negative oxygen ions from the target itself may be responsible for a background resputtering effect. Our results and those found for Y-Ba-Cu-O by others are comparable. Bi in Bi-Sr-Ca-Cu-O behaves as Ba in Y-Ba-Cu-O, with regard to selective resputtering; furthermore, the response of Sr, Ca, and Cu to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for Cu in Y-Ba-Cu-O.

  1. Effect of oxidant on resputtering of Bi from Bi--Sr--Ca--Cu--O films

    International Nuclear Information System (INIS)

    Grace, J.M.; McDonald, D.B.; Reiten, M.T.; Olson, J.; Kampwirth, R.T.; Gray, K.E.

    1992-01-01

    The type and partial pressure of oxidant mixed with argon can affect the selective sputtering of Bi in composite-target, magnetron-sputtered Bi--Sr--Ca--Cu--O films. Comparative studies using oxygen and ozone show that ozone is a more potent oxidant, as well as a more potent source of resputterers than is oxygen. Severe resputtering from ozone is significantly reduced by a -40 V potential on the sample block. We suggest that oxygen causes resputtering by forming O + 2 , which interacts with the target to produce energetic O - . In contrast, ozone may form lower-energy O - by electron impact in the dark space. Negative oxygen ions from the target itself may be responsible for a background resputtering effect. Our results and those found for Y--Ba--Cu--O by others are comparable. Bi in Bi--Sr--Ca--Cu--O behaves as Ba in Y--Ba--Cu--O, with regard to selective resputtering; furthermore, the response of Sr, Ca, and Cu to oxygen in sputtered Bi--Sr--Ca--Cu--O is similar to what is observed for Cu in Y--Ba--Cu--O

  2. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  3. Investigation of the electronic structure of the BiSBr and BiSeBr clusters by density functional method

    International Nuclear Information System (INIS)

    Audzijonis, A.; Gaigalas, G.; Zigas, L.; Pauliukas, A.; Zaltauskas, R.; Kvedaravicius, A.; Cerskus, A.

    2008-01-01

    The energy levels of valence bands (VB) of the BiSBr and BiSeBr crystals have been calculated for investigation of the photoelectron emission spectra of BiSBr, BiSeBr and BiSI crystals. The molecular model of this crystal has been used for the calculation of VB by the Density Functional Theory (DFT) method. The molecular cluster, consisting of 20 molecules of BiSBr, BiSeBr, has been used for calculations of averaged total density of states, including atom vibrations. The spectra of the averaged total density of states from VB of BiSBr and BiSeBr clusters have been compared with the experimental photoelectron emission spectra from VB of BiSI crystals. The results clarify that the atomic vibrations in A 5 B 6 C 7 type crystals with chain structure create a smoother appearance of the averaged total density of state spectrum and the experimental X-ray photoemission spectra (XPS)

  4. On the mean square displacements (MSD) of Hg and Te in HgTe

    International Nuclear Information System (INIS)

    Madhavan, Y.; Ramachandran, K.

    1989-01-01

    The mean square displacements (MSD) of Hg and Te in the perfect system of HgTe are worked out in the modified rigid ion model of Plumelle and Vandevyver. Also the MSD of Hg and Te neighbours around anion and cation vacancies in HgTe are worked out giving an active role for the vacancy following the theory of Maradudin et al. The results are compared with experimental values. (author)

  5. In situ study on the formation of FeTe

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Wulff, Anders Christian; Yue, Zhao

    2011-01-01

    The formation of the FeTe compound from a mixture of Fe and Te powders was studied in situ by means of high-energy synchrotron X-ray diffraction. FeTe does not form directly from the starting elements; instead, FeTe2 forms as an intermediate product. During a 2 °C/min heating ramp, Te first reacts...

  6. Detection of high mass cluster ions sputtered from Bi surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Shepard, A; Hewitt, R W; Slusser, G J; Baitinger, W E; Cooks, R G; Winograd, N [Purdue Univ., Lafayette, Ind. (USA). Dept. of Chemistry; Delgass, W N [Purdue Univ., Lafayette, Ind. (USA); Varon, A; Devant, G [Societe RIBER, 92 - Rueil-Malmaison (France)

    1976-12-01

    The technique of secondary ion mass spectrometry (SIMS) has been employed to detect Bi/sup 3 +/ ions and associated oxides Bi/sub 3/Osub(x)sup(+)(x=1 to 4) from a Bi foil. Using a 3 keV Ar/sup +/ ion primary beam of 5x10/sup -7/ A/cm/sup 2/, mass resolution to nearly 700 with the requisite sensitivity has been achieved. The Bi surface was also monitored by X-ray photoelectron spectroscopy (XPS or ESCA). The presence of a weak O 1s peak at 532.7 eV and a strong SIMS Bi/sup 3 +/ peak is interpreted to mean that the oxygen is weakly incorporated into the Bi lattice without disrupting metal-metal bonds.

  7. The luminescence of CaWO4: Bi single crystals

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Pashkovsky, M.; Voloshinovskii, A.; Kuklinski, B.; Grinberg, M.

    2006-01-01

    Influence of doping with Bi 3+ ions and Bi 3+ -Na + or Bi 3+ -Li + ions pairs on luminescence, emission kinetics and light yield of CaWO 4 crystals has been investigated. It has been shown that under excitation in the A-band at 272 and 287nm, related to the Bi 3+ ions absorption, the luminescence peaked at 468nm decaying with time τ=0.41μs is observed. For bismuth concentration 50-500ppm and the equimolar concentrations of the Bi 3+ ions accompanied by Na + or Li + ions compensators the significant suppression of the phosphorescence peaked at 520nm, related to the defect WO 3 -V O complex, and an improvement of scintillation characteristics of the CaWO 4 are noticed. Energy transfer from the defect WO 3 -V O and regular WO 4 2- oxy-anions to Bi 3+ ions have been observed at room temperatures and discussed

  8. CdZnTe quantum dots study: energy and phase relaxation process

    International Nuclear Information System (INIS)

    Viale, Yannick

    2004-01-01

    We present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantum wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrational states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and bi-excitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time. (author) [fr

  9. Codoping of Sb2Te3 thin films with V and Cr

    Science.gov (United States)

    Duffy, L. B.; Figueroa, A. I.; van der Laan, G.; Hesjedal, T.

    2017-11-01

    Magnetically doped topological insulators (TIs) are key to realizing the quantum anomalous Hall (QAH) effect, with the prospect of enabling dissipationless electronic devices in the future. Doping of the well-established three-dimensional TIs of the (Bi,Sb) 2(Se,Te) 3 family with the transition metals Cr and V is now an established approach for observing the QAH state at very low temperatures. While the magnetic transition temperatures of these materials are on the order of tens of degrees Kelvin, full quantization of the QAH state is achieved below ˜100 mK, governed by the size of the magnetic gap and thus the out-of-plane magnetic moment. In an attempt to raise the size of the magnetic moment and transition temperature, we carried out a structural and magnetic investigation of codoped (V,Cr):Sb2Te3 thin films. Starting from singly doped Cr:Sb2Te3 films, free of secondary phases and with a transition temperature of ˜72 K, we introduced increasing fractions of V and found a doubling of the transition temperature, while the magnetic moment decreases. In order to separate the properties and contributions of the two transition metals in the complex doping scenario independently, we employed spectroscopic x-ray techniques. Surprisingly, already small amounts of V lead to the formation of the secondary phase Cr2Te3 . No V was detectable in the Sb2Te3 matrix. Instead, it acts as a surfactant and can be found in the near-surface layers at the end of the growth. Our paper highlights the importance of x-ray-based studies for the doping of van der Waals systems, for which the optimization of magnetic moment or transition temperature alone is not necessarily a good strategy.

  10. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

    Science.gov (United States)

    Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

    2017-12-13

    Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

  11. Bacon, Lettuce and Tomato: een strategie om leerlingen te helpen hun antwoorden op examenvragen te verbeteren

    NARCIS (Netherlands)

    Kneppers, L.

    2014-01-01

    In Tutor2u las ik dat in een workshop een strategie was besproken om leerlingen te helpen hun examenantwoorden vollediger en juister te formuleren. De strategie heet in Groot Brittannië BLT, voor leerlingen daar gemakkelijk te onthouden vanwege de populaire Bacon, Lettuce en Tomato sandwich.

  12. Infrared and near infrared emission spectra of TeH and TeD

    Science.gov (United States)

    Yu, Shanshan; Shayesteh, Alireza; Fu, Dejian; Bernath, Peter F.

    2005-04-01

    The vibration-rotation emission spectra for the X2Π ground state and the near infrared emission spectra of the X2Π 1/2- X2Π 3/2 system of the TeH and TeD free radicals have been measured at high resolution using a Fourier transform spectrometer. TeH and TeD were generated in a tube furnace with a DC discharge of a flowing mixture of argon, hydrogen (or deuterium), and tellurium vapor. In the infrared region, for the X2Π 3/2 spin component we observed the 1-0, 2-1, and 3-2 vibrational bands for most of the eight isotopologues of TeH and the 1-0 and 2-1 bands for three isotopologues of TeD. For the X2Π 1/2- X2Π 3/2 transition, we observed the 0-0 and 1-1 bands for TeH and the 0-0, 1-1, and 2-2 bands for TeD. Except for a few lines, the tellurium isotopic shift was not resolved for the X2Π 1/2- X2Π 3/2 transitions of TeH and TeD. Local perturbations with Δ v = 2 between the two spin components of the X2Π state of TeH were found: X2Π 1/2, v = 0 with X2Π 3/2, v = 2; X2Π 1/2, v = 1 with X2Π 3/2, v = 3. The new data were combined with the previous data from the literature and two kinds of fits (Hund's case (a) and Hund's case (c)) were carried out for each of the 10 observed isotopologues: 130TeD, 128TeD, 126TeD, 130TeH, 128TeH, 126TeH, 125TeH, 124TeH, 123TeH, and 122TeH.

  13. Overexpression of BiP in tobacco alleviates endoplasmic reticulum stress

    NARCIS (Netherlands)

    Leborgne-Castel, N.; Jelitto- Dooren, E.P.W.M. van; Crofts, A.J.; Denecke, J.

    1999-01-01

    To study the role of the lumenal binding protein (BiP) in the transport and secretion of proteins, we have produced plants with altered BiP levels. Transgenic plants overexpressing BiP showed dramatically increased BiP mRNA levels but only a modest increase in BiP protein levels. The presence of

  14. Fuzzy Bi-cooperative games in multilinear extension form

    Czech Academy of Sciences Publication Activity Database

    Borkotokey, S.; Hazarika, P.; Mesiar, Radko

    2015-01-01

    Roč. 259, č. 1 (2015), s. 44-55 ISSN 0165-0114 R&D Projects: GA ČR GAP402/11/0378 Institutional support: RVO:67985556 Keywords : Fuzzy Bi-cooperative games * Bi-cooperative game * Bi-coalition * LG value Subject RIV: BA - General Mathematics Impact factor: 2.098, year: 2015 http://library.utia.cas.cz/separaty/2015/E/mesiar-0442007.pdf

  15. Bi-metallic catalysts, methods of making, and uses thereof

    KAUST Repository

    Basset, Jean-Marie

    2017-01-19

    Provided herein are bi-metallic catalysts, methods of making, and uses thereof. In some embodiments, the bi-metallic catalyst contains two different metal catalysts that can be used in hydrocarbon metathesis reactions, in some embodiments, the methods of making the bi-metallic catalysts can include two steps utilizing a surface organometallic chemistry approach in which the two different metal catalysts are sequentially grafted onto a support.

  16. Bi-amalgamations subject to the arithmetical property

    OpenAIRE

    Kabbaj, S.; Mahdou, N.; Moutui, M. A. S.

    2016-01-01

    This paper establishes necessary and sufficient conditions for a bi-amalgamation to inherit the arithmetical property, with applications on the weak global dimension and transfer of the semihereditary property. The new results compare to previous works carried on various settings of duplications and amalgamations, and capitalize on recent results on bi-amalgamations. All results are backed with new and illustrative examples arising as bi-amalgamations.

  17. Bi-metallic catalysts, methods of making, and uses thereof

    KAUST Repository

    Basset, Jean-Marie; Samantaray, Manoja K.; Dey, Raju; Abou-Hamad, Edy; Kavitake, Santosh

    2017-01-01

    Provided herein are bi-metallic catalysts, methods of making, and uses thereof. In some embodiments, the bi-metallic catalyst contains two different metal catalysts that can be used in hydrocarbon metathesis reactions, in some embodiments, the methods of making the bi-metallic catalysts can include two steps utilizing a surface organometallic chemistry approach in which the two different metal catalysts are sequentially grafted onto a support.

  18. Chemical casting of high-Tc superconducting BiSCCO

    International Nuclear Information System (INIS)

    Toth, L.E.; Das, B.N.; Rayne, R.J.; Bender, B.A.; Lechter, W.L.; Hoff, H.A.; Osofsky, M.S.; Soulen, R.J. Jr.

    1989-01-01

    BiSCCO has been successfully cast into a number of useful shapes. This casting process differs significantly from traditional casting in that the process includes a change in the oxygen content of the melt. A heat treatment is required to restore the original chemistry, properly form the BiSCCO crystal structure and develop the superconducting properties. This paper emphasizes the microstructures of as-cast and heat treated BiSCCO. Casting causes considerable grain alignment of the BiSCCO platelets. The platelets align preferentially along the thermal gradients which exist during the solidification process

  19. High pressure synthesis of BiS2

    DEFF Research Database (Denmark)

    Søndergaard-Pedersen, Simone; Nielsen, Morten Bormann; Bremholm, Martin

    crystal structures and electrical properties.1,2 Up until now, the most sulfur rich phase in the Bi-S phase diagram was Bi2S3.3 For BiS2 the Bi atoms have anisotropic charge distribution and more complex structures are expected when comparing the layered structures of transition metal dichalcogenides....... The possibilities of using high pressure synthesis to discover new phases in the Bi-S binary system were investigated as early as the 1960’s.4 The research led to discovery of a compound with BiS2 stoichiometry, but no structure solution of BiS2 was reported. A reason behind making this new phase is to study...... the physical properties since the related compound Bi2S3 is known to be a thermoelectric material.5 In this research the BiS2 compound was synthesized by a high pressure and high temperature method using a multi-anvil large volume press and the structure was solved by single crystal diffraction. The structure...

  20. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  1. Synthesis, Analysis, and Testing of BiOBr-Bi2WO6 Photocatalytic Heterojunction Semiconductors

    Directory of Open Access Journals (Sweden)

    Xiangchao Meng

    2015-01-01

    Full Text Available In photocatalysis, the recombination of electron-hole pairs is generally regarded as one of its most serious drawbacks. The synthesis of various composites with heterojunction structures has increasingly shed light on preventing this recombination. In this work, a BiOBr-Bi2WO6 photocatalytic heterojunction semiconductor was synthesized by the facile hydrothermal method and applied in the photocatalytic degradation process. It was determined that both reaction time and temperature significantly affected the crystal structure and morphologies of the photocatalysts. BiOBr (50 at%-Bi2WO6 composites were prepared under optimum synthesis conditions (120°C for 6 h and by theoretically analyzing the DRS results, it was determined that they possessed the suitable band gap (2.61 eV to be stimulated by visible-light irradiation. The photocatalytic activities of the as-prepared photocatalysts were evaluated by the degradation of Rhodamine B (RhB under visible-light irradiation. The experimental conditions, including initial concentration, pH, and catalyst dosage, were explored and the photocatalysts in this system were proven stable enough to be reused for several runs. Moreover, the interpreted mechanism of the heterojunction enhancement effect proved that the synthesis of a heterojunction structure provided an effective method to decrease the recombination rate of the electron-hole pairs, thereby improving the photocatalytic activity.

  2. Response of MnBi-Bi eutectic to freezing rate changes

    Science.gov (United States)

    Nair, M.; Fu, T.-W.; Wilcox, W. R.; Doddi, K.; Ravishankar, P. S.; Larson, D.

    1982-01-01

    Reference is made to a study by Fu and Wilcox (1981), which treated theoretically the influence on freezing rate of sudden changes in translation rate in the Bridgman-Stockbarger technique. This treatment is extended here to a linear ramped translation rate and an oscillatory freezing rate. It is found that oscillations above a few hertz are highly damped in small-diameter apparatus. An experimental test is carried out of the theoretical predictions for a sudden change of translation rate. The MnBi-Bi eutectic is solidified with current-induced interface demarcation. The experimental results accord reasonably well with theory if the silica ampoule wall is assumed to either (1) contribute only a resistance to heat exchange between the sample and the furnace wall or (2) transmit heat effectively in the axial direction by radiation. In an attempt to explain the fact that a finer microstructure is obtained in space, MnBi-Bi microstructure is determined when the freezing rate is increased or decreased rapidly. Preliminary results suggest that fiber branching does not occur as readily as fiber termination.

  3. First principles study of AlBi

    International Nuclear Information System (INIS)

    Amrani, B.; Achour, H.; Louhibi, S.; Tebboune, A.; Sekkal, N.

    2008-05-01

    Using the first principles method of the full potential linear augmented plane waves (FPLAPW), the structural and the electronic properties of AlBi are investigated. It is found that this compound has a small and direct semiconducting gap at Γ. Through the quasi-harmonic Debye model, in which the phononic effects are considered, the dependences of the volume, the bulk modulus, the variation of the thermal expansion α, as well as the Debye temperature θ D and the heat capacity C v are successfully obtained in the whole range from 0 to 30 GPa and temperature range from 0 to 1200 K. (author)

  4. Implementing Sentinels in the TARGIT BI Suite

    DEFF Research Database (Denmark)

    Middelfart, Morten; Pedersen, Torben Bach

    2011-01-01

    This paper describes the implementation of socalled sentinels in the TARGIT BI Suite. Sentinels are a novel type of rules that can warn a user if one or more measure changes in a multi-dimensional data cube are expected to cause a change to another measure critical to the user. Sentinels notify u...... pattern mining or correlation techniques. We demonstrate, through extensive experiments, that mining and usage of sentinels is feasible with good performance for the typical users on a real, operational data warehouse....

  5. Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

    International Nuclear Information System (INIS)

    Gessert, T.A.; Asher, S.; Johnston, S.; Young, M.; Dippo, P.; Corwine, C.

    2007-01-01

    High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu i ) and oxygen on Te (O Te ) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe

  6. Unusual Concentration Induced Antithermal Quenching of the Bi(2+) Emission from Sr2P2O7:Bi(2.).

    Science.gov (United States)

    Li, Liyi; Peng, Mingying; Viana, Bruno; Wang, Jing; Lei, Bingfu; Liu, Yingliang; Zhang, Qinyuan; Qiu, Jianrong

    2015-06-15

    The resistance of a luminescent material to thermal quenching is essential for the application in high power LEDs. Usually, thermal luminescence quenching becomes more and more serious as the activator concentration increases. Conversely, we found here that a red phosphor Sr2P2O7:Bi(2+) is one of the exceptions to this as we studied the luminescence properties at low (10-300 K) and high (300-500 K) temperatures. As Bi(2+) ions are incorporated into Sr2P2O7, they exhibit the emissions at ∼660 and ∼698 nm at room temperature and are encoded, hereafter, as Bi(1) and Bi(2) due to the substitutions for two different crystallographic sites Sr(1) and Sr(2), respectively, in the compound. However, they will not substitute for these sites equally. At lower dopant concentration, they will occupy preferentially Sr(2) sites partially due to size match. As the concentration increases, more Bi(2+) ions start to occupy the Sr(1) sites. This can be verified by the distinct changes of emission intensity ratio of Bi(2) to Bi(1). As environment temperature increases, the thermal quenching happens, but it can be suppressed by the Bi(2+) concentration increase. This becomes even more pronounced in Bi(2+) heavily doped sample as we decompose the broad emission band into separated Bi(1) and Bi(2) Gaussian peaks. For the sample, the Bi(1) emission at ∼660 nm even shows antithermal-quenching particularly at higher temperatures. This phenomenon is accompanied by the blue shift of the overall emission band and almost no changes of lifetimes. A mechanism is proposed due to volume expansion of the unit cell, the increase of Bi(1) content, and temperature dependent energy transfer between Bi(2) and Bi(1). This work helps us better understand the complex luminescent behavior of Bi(2+) doped materials, and it will be helpful to design in the future the heavily doped phosphor for WLEDs with even better resistance to thermal quenching.

  7. [sup 205]Bi/[sup 206]Bi cyclotron production from Pb-isotopes for absorption studies in humans

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, R.; Dresow, B.; Heinrich, H.C. (Universitaetskrankenhaus Eppendorf, Hamburg (Germany). Abt. Medizinische Biochemie); Wendel, J.; Bechtold, V. (Kernforschungszentrum Karlsruhe GmbH (Germany). Inst. fuer Kernphysik)

    1993-12-01

    Pb(p,xn) thick target excitation functions were measured in the energy range 10-38 MeV in order to optimize the production of isotopically pure radiobismuth from [sup nat]Pb, [sup 206]Pb, and [sup 207]Pb. Additionally, the decay of Po-isotopes from deuteron irradiation of natural bismuth ([sup 209]Bi) was exploited for radiobismuth production. [sup 205]Bi was produced from [sup 206]Pb at 20 MeV with only 2% of [sup 206]Bi at 4 weeks post irradiation. Bismuth compounds as used in the treatment of peptic ulcer were labeled with [sup 205]Bi for absorption studies in animals and subjects. (Author).

  8. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  9. In situ grown hierarchical 50%BiOCl/BiOI hollow flowerlike microspheres on reduced graphene oxide nanosheets for enhanced visible-light photocatalytic degradation of rhodamine B

    Science.gov (United States)

    Su, Xiangde; Yang, Jinjin; Yu, Xiang; Zhu, Yi; Zhang, Yuanming

    2018-03-01

    50%BiOCl/BiOI/reduced graphene oxide (50%BiOCl/BiOI/rGO) composite photocatalyst was synthesized successfully by a facile one-step solvothermal route in this work. Reduction of graphene oxide (GO) took place in the process of solvothermal reaction and a new Bi-C bond between rGO and 50%BiOCl/BiOI was formed. The introduction of rGO affected the morphology of 50%BiOCl/BiOI, resulting in the transformation of 50%BiOCl/BiOI from solid microspheres to hollow microspheres. Both the introduction of rGO and formation of 50%BiOCl/BiOI hollow microspheres can facilitate the light absorption. The strong interaction between 50%BiOCl/BiOI and rGO and the electrical conductivity of rGO greatly improved the effective separation of photogenerated carriers. Hence, GOB-5 demonstrated the highest photocatalytic activity which was over twice of the pristine 50%BiOCl/BiOI in the presence of visible light. Mechanism study revealed that 50%BiOCl/BiOI generated electrons and holes in the presence of visible light, and holes together with rad O2- generated from reduction of O2 by electrons degraded the pollutant directly. Overall, this work provides an excellent reference to the synthesis of chemically bonded BiOX/BiOY (X, Y = Cl, Br, I)/rGO nanocomposite and helps to promote their applications in environmental protection and photoelectric conversion.

  10. The effect of FR enhancement in reactive ion beam sputtered Bi, Gd, Al-substituted iron- garnets: Bi2O3 nanocomposite films

    OpenAIRE

    Berzhansky, V.; Shaposhnikov, A.; Karavainikov, A.; Prokopov, A.; Mikhailova, T.; Lukienko, I.; Kharchenko, Yu.; Miloslavskaya, O.; Kharchenko, N.

    2012-01-01

    The effect of considerable Faraday rotation (FR) and figure of merit (Q) enhancement in Bi, Gd, Al-substituted iron garnets: Bi2O3 nano-composite films produced by separate reactive ion beam sputtered Bi:YIG and Bi2O3 films was found. It reached threefold enhancement of the FR and twofold of the Q one on GGG substrates.

  11. Effect of Bi on the corrosion resistance of zirconium alloys

    International Nuclear Information System (INIS)

    Yao Meiyi; Zhou Bangxin; Li Qiang; Zhang Weipeng; Zhu Li; Zou Linghong; Zhang Jinlong; Peng Jianchao

    2014-01-01

    In order to investigate systematically the effect of Bi addition on the corrosion resistance of zirconium alloys, different zirconium-based alloys, including Zr-4 (Zr-l.5Sn-0.2Fe-0.1Cr), S5 (Zr-0.8Sn-0.35Nb-0.4Fe-0.1Cr), T5 (Zr-0.7Sn-l.0Nb-0.3Fe-0.1Cr) and Zr-1Nb, were adopted to prepare the zirconium alloys containing Bi of 0∼0.5% in mass fraction. These alloys were denoted as Zr-4 + xBi, S5 + xBi, T5 + xBi and Zr-1Nb + xBi, respectively. The corrosion behavior of these specimens was investigated by autoclave testing in lithiated water with 0.01 M LiOH or deionized water at 360 ℃/18.6 MPa and in superheated steam at 400 ℃/10.3 MPa. The microstructure of the alloys was examined by TEM and the second phase particles (SPPs) were analyzed by EDS. Microstructure observation shows that the addition of Bi promotes the precipitation of Sn as second phase particles (SPPs) because Sn is in solid solution in α-Zr matrix in Zr-4, S5 and T5 alloys. The concentration of Bi dissolved in α-Zr matrix increase with the increase of Nb in the alloys, and the excess Bi precipitates as Bi-containing SPPs. The corrosion results show that the effect of Bi addition on the corrosion behavior of different zirconium-based alloys is very complicated, depending on their compositions and corrosion conditions. In the case of higher Bi concentration in α-Zr, the zirconium alloys exhibit better corrosion resistance. However, in the case of precipitation of Bi-containing SPPs, the corrosion resistance gets worse. This indicates that the solid solution of Bi in α-Zr matrix can improve the corrosion resistance, while the precipitation of the Bi-containing SPPs is harmful to the corrosion resistance. (authors)

  12. A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

    International Nuclear Information System (INIS)

    Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

    2005-01-01

    A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

  13. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    International Nuclear Information System (INIS)

    Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

    2006-01-01

    conditions on the CdTe optical absorption coefficient, some samples were prepared from CdTe: Bi powders in order to study the influence of doping on their optical properties. Low temperature Photoluminescence measurements have helped us in the interpretation of the results. (Author)

  14. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    growth conditions on the CdTe optical absorption coefficient, some samples were prepared from CdTe: Bi powders in order to study the influence of doping on their optical properties. Low temperature Photoluminescence measurements have helped us in the interpretation of the results. (Author)

  15. Photoreduction of non-noble metal Bi on the surface of Bi{sub 2}WO{sub 6} for enhanced visible light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaojing [State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University, No. 8, Xindu Road, Xindu District, Chengdu 610500 (China); The Center of New Energy Materials and Technology, School of Materials Science and Engineering, Southwest Petroleum University, No. 8, Xindu Road, Xindu District, Chengdu 610500 (China); Yu, Shan; Liu, Yang; Zhang, Qian [The Center of New Energy Materials and Technology, School of Materials Science and Engineering, Southwest Petroleum University, No. 8, Xindu Road, Xindu District, Chengdu 610500 (China); Zhou, Ying, E-mail: yzhou@swpu.edu.cn [State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University, No. 8, Xindu Road, Xindu District, Chengdu 610500 (China); The Center of New Energy Materials and Technology, School of Materials Science and Engineering, Southwest Petroleum University, No. 8, Xindu Road, Xindu District, Chengdu 610500 (China)

    2017-02-28

    Highlights: • Bi{sub 2}WO{sub 6}-Bi composite was synthesized by in situ photoreduction of Bi{sub 2}WO{sub 6}. • Bi{sub 2}WO{sub 6}-Bi exhibits improved photocatalytic efficiency towards degradation of Rhodamine B. • The generation of elemental Bi in Bi{sub 2}WO{sub 6}-Bi induces vacancy and structure distortion of Bi{sub 2}WO{sub 6}. • The surface oxygen adsorption mode changes from hydroxyl group on Bi{sub 2}WO{sub 6} to molecular oxygen on Bi{sub 2}WO{sub 6}-Bi. - Abstract: In this report, Bi{sub 2}WO{sub 6}-Bi composite was prepared through an in situ photoreduction method and was characterized systematically by X-Ray diffraction, transmission electron microscopy, X-Ray photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. The as-prepared Bi{sub 2}WO{sub 6}-Bi maintains the same crystal structure with the pristine Bi{sub 2}WO{sub 6} regardless of some surface defects. Nevertheless, these surface defects result in the change of surface oxygen adsorption mode from hydroxyl to molecular oxygen on Bi{sub 2}WO{sub 6}. Photocatalytic activity over Bi{sub 2}WO{sub 6}-Bi is 2.4 times higher than that of Bi{sub 2}WO{sub 6} towards the degradation of organic dye Rhodamine B (RhB) under visible light irradiation (λ > 420 nm). A deep study shows that cleavage of benzene ring is the main pathway for RhB degradation over Bi{sub 2}WO{sub 6}, but both the benzene cleavage and de-ethylation pathway coexist for RhB decomposition in the presence of Bi{sub 2}WO{sub 6}-Bi as the photocatalyst. Photoelectrochemical study including transient photocurrent tests and electrochemical impedance spectroscopy measurements shows that Bi{sub 2}WO{sub 6}-Bi could facilitate the charge transfer process compared to Bi{sub 2}WO{sub 6}. These data above has indicated a new insight into the promotion mechanism based on Bi related heterostructures.

  16. A new type of one-dimensional compound: Structure of Nb4(Te2)4Te4I

    International Nuclear Information System (INIS)

    Deng Shuiquan; Zhuang Honghui; Lu Canzhong; Huang Jinshun; Huang Jingling

    1993-01-01

    The new infinite-chain niobium telluride iodide has been prepared by reaction of the elements at 893 K. Nb 4 (Te 2 ) 4 Te 4 I represents a new one-dimensional structure type. The structure consists of [Nb 4 (Te 2 ) 4 Te 4 I] ∞ chains which are formed by the four-nuclear butterfly cluster units 'Nb 4 (Te 2 ) 4 Te 4 ' with the I atoms bridging between different cluster units. (orig.)

  17. Bi-orderings on pure braided Thompson's groups

    OpenAIRE

    Burillo, Jose; Gonzalez-Meneses, Juan

    2006-01-01

    In this paper it is proved that the pure braided Thompson’s group BF admits a bi-order, analog to the bi-order of the pure braid groups. Ministerio de Educación y Ciencia Fondo Europeo de Desarrollo Regional

  18. Construction of a bimolecular fluorescence complementation (BiFC ...

    African Journals Online (AJOL)

    Protein–protein interactions are essential for signal transduction in cells. Bimolecular fluorescence complementation (BiFC) is a novel technology that utilises green fluorescent proteins to visualize protein–protein interactions and subcellular protein localisation. BiFC based on pSATN vectors are a good system for ...

  19. BiFeO3 Crystal Structure at Low Temperatures

    International Nuclear Information System (INIS)

    Palewicz, A.; Sosnowska, I.; Przenioslo, R.; Hewat, A.W.

    2010-01-01

    The crystal and magnetic structure of BiFeO 3 have been studied with the use of high resolution neutron diffraction between 5 K and 300 K. The atomic coordinates in BiFeO 3 are almost unchanged between 5 K and 300 K. (authors)

  20. Bi-cooperative games in bipolar fuzzy settings

    Czech Academy of Sciences Publication Activity Database

    Hazarika, P.; Borkotokey, S.; Mesiar, Radko

    2018-01-01

    Roč. 47, č. 1 (2018), s. 51-66 ISSN 0308-1079 Institutional support: RVO:67985556 Keywords : Bi-cooperative games * bipolar fuzzy bi-coalition * Shapley function Subject RIV: BA - General Mathematics Impact factor: 2.490, year: 2016 http://library.utia.cas.cz/separaty/2018/E/mesiar-0485377.pdf

  1. Center conditions and limit cycles for BiLienard systems

    Directory of Open Access Journals (Sweden)

    Jaume Gine

    2017-03-01

    Full Text Available In this article we study the center problem for polynomial BiLienard systems of degree n. Computing the focal values and using Grobner bases we find the center conditions for such systems for n=6. We also establish a conjecture about the center conditions for polynomial BiLienard systems of arbitrary degree.

  2. Structural, elastic, electronic and optical properties of bi-alkali ...

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali ... and efficient method for the calculation of the ground-state ... Figure 2. Optimization curve (E–V) of the bi-alkali antimonides: (a) Na2KSb, (b) Na2RbSb, (c) Na2CsSb, .... ical shape of the charge distributions in the contour plots.

  3. Tri-maximal vs. bi-maximal neutrino mixing

    International Nuclear Information System (INIS)

    Scott, W.G

    2000-01-01

    It is argued that data from atmospheric and solar neutrino experiments point strongly to tri-maximal or bi-maximal lepton mixing. While ('optimised') bi-maximal mixing gives an excellent a posteriori fit to the data, tri-maximal mixing is an a priori hypothesis, which is not excluded, taking account of terrestrial matter effects

  4. Scavenger Receptor BI Plays a Role in Facilitating Chylomicron Metabolism

    NARCIS (Netherlands)

    Out, R.; Kruijt, J.K.; Rensen, P.C.N.; Hildebrand, R.B.; Vos, P. de; Eck, M. van; Berkel, T.J.C. van

    2004-01-01

    The function of scavenger receptor class B type I (SR-BI) in mediating the selective uptake of high density lipoprotein (HDL) cholesterol esters is well established. However, the potential role of SR-BI in chylomicron and chylomicron remnant metabolism is largely unknown. In the present

  5. Genetic Variant of the Scavenger Receptor BI in Humans

    NARCIS (Netherlands)

    Vergeer, Menno; Korporaal, Suzanne J. A.; Franssen, Remco; Meurs, Illiana; Out, Ruud; Hovingh, G. Kees; Hoekstra, Menno; Sierts, Jeroen A.; Dallinga-Thie, Geesje M.; Motazacker, Mohammad Mahdi; Holleboom, Adriaan G.; van Berkel, Theo J. C.; Kastelein, John J. P.; van Eck, Miranda; Kuivenhoven, Jan Albert

    2011-01-01

    BACKGROUND In mice, the scavenger receptor class B type I (SR-BI) is essential for the delivery of high-density lipoprotein (HDL) cholesterol to the liver and steroidogenic organs. Paradoxically, elevated HDL cholesterol levels are associated with increased atherosclerosis in SR-BI-knockout mice. It

  6. Genetic variant of the scavenger receptor BI in humans

    NARCIS (Netherlands)

    Vergeer, Menno; Korporaal, Suzanne J A; Franssen, Remco; Meurs, Illiana; Out, Ruud; Hovingh, G Kees; Hoekstra, Menno; Sierts, Jeroen A; Dallinga-Thie, Geesje M; Motazacker, Mohammad Mahdi; Holleboom, Adriaan G; Van Berkel, Theo J C; Kastelein, John J P; Van Eck, Miranda; Kuivenhoven, Jan Albert

    2011-01-01

    BACKGROUND: In mice, the scavenger receptor class B type I (SR-BI) is essential for the delivery of high-density lipoprotein (HDL) cholesterol to the liver and steroidogenic organs. Paradoxically, elevated HDL cholesterol levels are associated with increased atherosclerosis in SR-BI-knockout mice.

  7. Synthesis of BiFeO3 by carbonate precipitation

    Indian Academy of Sciences (India)

    tional ceramic synthesis approach of mixing and heating the oxides of Bi and Fe ... −1 . Phase identification was carried out by X-ray powder diffraction using a PAN analytic ... of the total Fe ions in the starting solution have entered the. Bi2CO5 ...

  8. One step synthesis of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon spheres with enhanced photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Lingling [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Luo, Zhijun, E-mail: lzj@ujs.edu.cn [School of the Environment, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093 (China); Tang, Chao [Maple Leaf International High School, Zhenjiang 212013 (China)

    2013-11-15

    Graphical abstract: Functional groups of sodium gluconate play synergetic roles in the formation of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon core–shell nanosturctures (Bi@Bi{sub 2}O{sub 3}@CRCSs). Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits significant enhanced photocatalytic activity under visible light irradiation. - Highlights: • One step synthesis of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon spheres. • Functional groups of sodium gluconate play synergetic roles in the formation of Bi@Bi{sub 2}O{sub 3}@CRCSs. • Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits enhanced photocatalytic activity under visible light irradiation. - Abstract: Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon core-shell nanosturctures (Bi@Bi{sub 2}O{sub 3}@CRCSs) have been synthesized via a one-step method. The core–shell nanosturctures of the as-prepared samples were confirmed by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and Raman spectroscopy. The formation of Bi@Bi{sub 2}O{sub 3}@CRCSs core–shell nanosturctures should attribute to the synergetic roles of different functional groups of sodium gluconate. Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits significant enhanced photocatalytic activity under visible light irradiation (λ > 420 nm) and shows an O{sub 2}-dependent feature. According to trapping experiments of radicals and holes, hydroxyl radicals were not the main active oxidative species in the photocatalytic degradation of MB, but O{sub 2}·{sup −} are the main active oxidative species.

  9. Pressure effects on the physical properties of Kagome Cu3Bi(SeO3)2O2Cl metamagnet

    Science.gov (United States)

    Tseng, Wu-Jyun; Wu, Hung-Cheng; Yang, Pei-Ying; Kakarla, D. Chandrasekhar Kakarla; Yang, Hung-Duen; Low temperature physics Lab, Department of physics, National Sun Yat-Sen University Team

    The effects of pressure on the structural and magnetic properties have been studied in Kagome Cu3Bi(Se1-xTexO3)2 O2Cl polycrystalline samples. The initial crystal structure Pmmn is gradually converted to Pcmn space group when x >= 0.6, which could be determined by synchrotron X-ray diffraction, Raman spectroscopy, and magnetization measurements. The antiferromagnetic transition temperature (TN) and the critical field (HC) of metamagnetic spin-flip transition increase, but the value of saturation magnetization (MS) decreases with Te doping concentration. Under external pressure, the TN and MS increase, while the HC reduces. These anisotropic pressure results could be explained by the modulation of competition between ferromagnetic intralayer and antiferromagnetic interlayer interactions. The route to control the metamagnetic spin-flip transition by anisotropic pressure effects might be helpful to understand the mechanism of field- induced multiferroic Cu3Bi(SeO3)2 O2Cl

  10. Precipitation of Ag2Te in the thermoelectric material AgSbTe2

    International Nuclear Information System (INIS)

    Sugar, Joshua D.; Medlin, Douglas L.

    2009-01-01

    The microstructure of AgSbTe 2 , prepared by solidification, is investigated using electron microscopy. During solidification and thermal treatment, the material separates into a two-phase mixture of a rocksalt phase, which is Ag 22 Sb 28 Te 50 , and silver telluride, Ag 2 Te. Ag 2 Te formation results either from eutectic solidification (large lamellar structures), or by solid-state precipitation (fine-scale particles). The crystal structure of the AgSbTe 2 phase determined by electron diffraction is consistent with a rocksalt structure that has a disordered cation sublattice. A preferred crystallographic orientation relationship at the interface between the matrix and the low-temperature monoclinic Ag 2 Te phase is defined and discussed. This orientation relationship is observed for both second-phase morphologies. In both cases, the orientation relationship originates from a topotactic (cube-on-cube) alignment of the Te sublattices in the initially cubic Ag 2 Te and the matrix at elevated temperature. This Te sublattice alignment is retained as the Ag 2 Te undergoes a cubic-to-monoclinic transformation during cooling. This orientation relationship is observed for both second-phase morphologies.

  11. Pulsar TeV Halos Explain the Diffuse TeV Excess Observed by Milagro.

    Science.gov (United States)

    Linden, Tim; Buckman, Benjamin J

    2018-03-23

    Milagro observations have found bright, diffuse TeV emission concentrated along the galactic plane of the Milky Way. The intensity and spectrum of this emission is difficult to explain with current models of hadronic γ-ray production, and has been named the "TeV excess." We show that TeV emission from pulsars naturally explains this excess. Recent observations have detected "TeV halos" surrounding pulsars that are either nearby or particularly luminous. Extrapolating this emission to the full population of Milky Way pulsars indicates that the ensemble of "subthreshold" sources necessarily produces bright TeV emission diffusively along the Milky Way plane. Models indicate that the TeV halo γ-ray flux exceeds that from hadronic γ rays above an energy of ∼500  GeV. Moreover, the spectrum and intensity of TeV halo emission naturally matches the TeV excess. Finally, we show that upcoming HAWC observations will resolve a significant fraction of the TeV excess into individual TeV halos, conclusively confirming, or ruling out, this model.

  12. Targeting SR-BI for cancer diagnostics, imaging and therapy

    Directory of Open Access Journals (Sweden)

    Maneesha Amrita Rajora

    2016-09-01

    Full Text Available Scavenger receptor class B type I (SR-BI plays an important role in trafficking cholesteryl esters between the core of high density lipoprotein and the liver. Interestingly, this integral membrane protein receptor is also implicated in the metabolism of cholesterol by cancer cells, whereby overexpression of SR-BI has been observed in a number of tumours and cancer cell lines, including breast and prostate cancers. Consequently, SR-BI has recently gained attention as a cancer biomarker and exciting target for the direct cytosolic delivery of therapeutic agents. This brief review highlights these key developments in SR-BI-targeted cancer therapies and imaging probes. Special attention is given to the exploration of high density lipoprotein nanomimetic platforms that take advantage of upregulated SR-BI expression to facilitate targeted drug-delivery and cancer diagnostics, and promising future directions in the development of these agents.

  13. Bi-cooperative games in bipolar fuzzy settings

    Science.gov (United States)

    Hazarika, Pankaj; Borkotokey, Surajit; Mesiar, Radko

    2018-01-01

    In this paper, we introduce the notion of a bi-cooperative game with Bipolar Fuzzy Bi-coalitions and discuss the related properties. In many decision-making situations, players show bipolar motives while cooperating among themselves. This is modelled in both crisp and fuzzy environments. Bi-cooperative games with fuzzy bi-coalitions have already been proposed under the product order of bi-coalitions where one had memberships in [0, 1]. In the present paper, we adopt the alternative ordering: ordering by monotonicity and account for players' memberships in ?, a break from the previous formulation. This simplifies the model to a great extent. The corresponding Shapley axioms are proposed. An explicit form of the Shapley value to a particular class of such games is also obtained. Our study is supplemented with an illustrative example.

  14. Interaction of submonolayer Bi films with the Si(100) surface

    International Nuclear Information System (INIS)

    Goryachko, A.M.; Melnik, P.V.; Nakhodkin, M.G.

    1999-01-01

    Scanning tunneling microscopy and Auger electron spectroscopy were used to investigate interaction of submonolayer Bi films with the Si(100)-2x1 surface. Ultra small Bi amounts (≤ 0.15ML) do not form ordered structures, if deposited at room temperature. Annealing at 400 degree C causes Bi to coalesce into small islands of the densely packed 2x1 phase. Simultaneously, vacancy clusters are produced in the substrate, which remain after desorption of Bi at 600 degree C. In contrast, room temperature deposition and thermal desorption of larger Bi amounts (≥ 0.25 ML) produces vacancies grouped into lines. Further annealing of such a substrate in the temperature range of 600 degree C ≤ T ≤ 750 degree C causes the phase transition between the Si(100)-2xn and Si(100)-c(4x4)

  15. BiVO4 nanoparticles: Preparation, characterization and photocatalytic activity

    Directory of Open Access Journals (Sweden)

    Venkataraman Sivakumar

    2015-12-01

    Full Text Available Bismuth vanadate (BiVO4 nanoparticles were synthesized by a simple thermal decomposition method. The synthesized bismuth vanadate nanoparticles were characterized by X-ray diffraction analysis, it is found that the synthesized sample belongs to monoclinic BiVO4. Fourier transform infrared spectroscopy confirms the formation of Bi-O bond in the sample. Ultraviolet–Visible (DRS-UV–Visible spectroscopy and photoluminescence spectroscopy reveal the optical property of the BiVO4 nanoparticles. The morphology was identified by both scanning electron microscopy and high-resolution transmission electron microscopy. Further, the photocatalytic activity of BiVO4 nanoparticles was investigated by photodegradation of methylene blue as a model organic pollutant.

  16. RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

  17. Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

    Science.gov (United States)

    Zhang, Min; Wei, Zhan-Tao

    2018-05-01

    Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

  18. Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

    Science.gov (United States)

    Zhang, Min; Wei, Zhan-Tao

    2018-03-01

    Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

  19. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  20. Contact interaction of the Bi12GeO20, Bi12SiO20, and Bi4Ge3O12 melts with noble metals

    Science.gov (United States)

    Denisov, V. M.; Podkopaev, O. I.; Denisova, L. T.; Kuchumova, O. V.; Istomin, S. A.; Pastukhov, E. A.

    2014-02-01

    The sessile drop method is used to study the contact interaction of Ag, Au, Pd, Pt, and Ir with the Bi2O3-GeO2 and Bi2O3-SiO2 melts. These melts spread over Ag and Pd and, in some cases, over Au and Pt at a rather high speed and form equilibrium contact angles on Ir.

  1. High-pressure studies of superconductivity in BiO0. 75F0. 25BiS2

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 40; Issue 6. High-pressure studies of superconductivity in BiO 0.75 F 0.25 BiS 2. ZEBA HAQUE GOHIL S THAKUR GANESAN KALAI SELVAN SONACHALAM ARUMUGAM L C GUPTA A K GANGULI. Volume 40 Issue 6 October 2017 pp 1121-1125 ...

  2. High-pressure studies of superconductivity in BiO0. 75F0. 25BiS2

    Indian Academy of Sciences (India)

    ). We have investigated the effect of pressure on magnetization measurements. Our studies suggest improved superconducting properties in polycrystalline samples of BiO 0.75 F 0.25 BiS 2 . The Tc in our sample is 5.3 K, at ambient pressure, ...

  3. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  4. Electrical and optical properties of SnEuTe and SnSrTe films

    Science.gov (United States)

    Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

    2010-06-01

    The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

  5. Synthesis of chemically bonded BiOCl@Bi{sub 2}WO{sub 6} microspheres with exposed (0 2 0) Bi{sub 2}WO{sub 6} facets and their enhanced photocatalytic activities under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yongchao [Qingdao Agricultural University, Qingdao 266109 (China); Chen, Zhiwei [School of Life Sciences, Shandong University of Technology, Zibo 255049 (China); Qu, Dan [Qingdao Agricultural University, Qingdao 266109 (China); Shi, Jinsheng, E-mail: jsshiqn@aliyun.com [Qingdao Agricultural University, Qingdao 266109 (China)

    2016-01-15

    Graphical abstract: - Highlights: • BiOCl@Bi{sub 2}WO{sub 6} composites were prepared via a controlled anion exchange method. • The shell of composites was composed of Bi{sub 2}WO{sub 6} sheets with exposed (0 2 0) facets. • The BiOCl@Bi{sub 2}WO{sub 6} composites showed efficient photocatalytic activity. • A possible photocatalytic degradation mechanism is proposed. - Abstract: Bi{sub 2}WO{sub 6} photocatalysts has been extensively studied for its photocatalytic activity. However, few works have been conducted on hierarchical Bi{sub 2}WO{sub 6} composite photocatalysts with specifically exposed facets. In this work, we report a facile method to synthesize BiOCl@Bi{sub 2}WO{sub 6} hierarchical composite microspheres. Bi{sub 2}WO{sub 6} nanosheets with specifically exposed (0 2 0) facet were directly formed on the surface of BiOCl precursor microspheres via a controlled anion exchange route between BiOCl and Na{sub 2}WO{sub 4}. The visible-light photocatalytic activity of the BiOCl@Bi{sub 2}WO{sub 6} heterojunction with exposed (0 2 0) facets (denoted as BiOCl@Bi{sub 2}WO{sub 6}) was investigated by degradation of Rhodamine B (RhB) and ciprofloxacin (CIP) aqueous solution under visible light irradiation. The experimental results indicated that the BiOCl@Bi{sub 2}WO{sub 6} composite microsphere with intimate interfacial contacts exhibited improved efficiency for RhB photodegradation in comparison with pure BiOCl and Bi{sub 2}WO{sub 6}. The BiOCl@Bi{sub 2}WO{sub 6} composite microsphere also shows high photocatalytic activity for degradation of CIP under visible light irradiation. The enhanced photocatalytic performance of BiOCl@Bi{sub 2}WO{sub 6}-020 hierarchical microspheres can be ascribed to the improved visible light harvesting ability, high charge separation and transfer. This work will make significant contributions toward the exploration of novel heterostructures with high potential in photocatalytic applications.

  6. Influence of nanoinclusions on scattering of holes and phonons and transport coefficients in BixSb1−xTe3 bulk nanostructures

    International Nuclear Information System (INIS)

    Bulat, Lev P.; Osvenskii, Vladimir B.; Parkhomenko, Yurii N.; Pshenay-Severin, Dmitry A.

    2012-01-01

    One of the possible ways to increase the thermoelectric figure of merit is the use of bulk nanostructured materials fabricated by melt spinning with subsequent hot pressing or spark plasma sintering. Among a variety of nanostructure types these materials contain regions of initial solid solution with nanometer sized inclusions of different compositions. In the present work the scattering of holes and phonons on nanoinclusions in such p-Bi x Sb 1−x Te 3 based materials is considered. The change of transport coefficients due to this scattering mechanism is theoretically estimated. The estimations showed that the reduction of lattice thermal conductivity (about 12–13%) for nanoinclusions of Bi 2 Te 3 –Sb 2 Te 3 solid solution with different compositions is much greater than the change in power factor. Therefore the corresponding increase of the thermoelectric figure of merit for this case is determined mainly by phonon scattering. Also it is shown that the results of estimations depend on phonon spectrum approximation, e.g. in the case of sine-shaped instead of linear phonon spectrum the estimations give two times higher thermal conductivity reduction. - Graphical abstract: Relative phonon thermal conductivity κ ph change (black line) due to nanoinclusion scattering versus nanoinclusion radius a, and relative thermoelectric power factor change (red line) due to nanoinclusion scattering versus chemical potential μ at nanoinclusion size a=1.5 nm and U 0 =−0.146 eV. Highlights: ► p-Bi x Sb 1−x Te 3 solid solutions with nanosized inclusions were considered. ► Selective hole scattering can increase power factor at high carrier concentrations. ► Lattice thermal conductivity estimations depend on phonon spectrum approximation. ► Phonon scattering can reduce lattice thermal conductivity by about 12–13%. ► The latter factor mainly determines the increase of thermoelectric efficiency.

  7. Synthesis and melting behaviour of Bi, Sn and Sn–Bi nanostructured alloy

    Energy Technology Data Exchange (ETDEWEB)

    Frongia, F.; Pilloni, M.; Scano, A.; Ardu, A.; Cannas, C.; Musinu, A. [Università di Cagliari, Dipartimento di Scienze Chimiche e Geologiche and Cagliari Research Unit of the National Consortium of Materials Science and Technology (INSTM), Cittadella Universitaria di Monserrato, 09042 Monserrato, CA (Italy); Borzone, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, Genoa University and Genoa Research Unit of the National Consortium of Materials Science and Technology (INSTM), Via Dodecaneso 31, I-16146 Genoa (Italy); Novakovic, R. [National Research Council (CNR), Institute for Energetics and Interphases (IENI), Via De Marini 6, 16149 Genoa (Italy); Ennas, G., E-mail: ennas@unica.it [Università di Cagliari, Dipartimento di Scienze Chimiche e Geologiche and Cagliari Research Unit of the National Consortium of Materials Science and Technology (INSTM), Cittadella Universitaria di Monserrato, 09042 Monserrato, CA (Italy)

    2015-02-25

    Highlights: • Aqueous solution route is used to produce Bi, Sn and Bi–Sn nanoparticles. • HRTEM revealed core–shell and Janus type structures of Bi–Sn nanoparticles. • Melting temperature depression of Bi and Bi–Sn nanoparticles were measured by DSC. • DSC data on Bi melting temperature depression agrees with theoretical values. - Abstract: Lead-free solders based on Bi–Sn bimetallic nanoclusters with eutectic composition (Bi{sub 43}Sn{sub 57}) were synthesized at low temperature by simultaneous reduction reaction from aqueous solution containing bismuth and tin chlorides, using potassium borohydride as a reducing agent. By the same processing route, pure bismuth and tin nanoparticles have also been prepared. Microstructure, morphology and composition of the samples were characterized by X-ray powder diffraction (XRD), transmission (TEM) and scanning electron microscopy (SEM). TEM images of Bi–Sn nanoparticles show average size ranging from 30 to 100 nm. Thermal behaviour of Bi–Sn nanopowders was studied by DSC (differential scanning calorimetry) and a melting temperature (135 °C) lower than that of the corresponding microcrystalline sample (139 °C) was observed. SEM micrographs of the thermally treated sample up to 400 °C show fine spherical grains in the micrometer range with finer powder particles on the surface. XRD powder diffraction analysis indicates the formation of bismuth and tin nanophases with an average particle size of 85 and 126 nm, respectively. The oxidation behaviour of the samples was also investigated. The results obtained have been analyzed in view of theoretical models describing the melting temperature depression of nanoparticles.

  8. Ions irradiation on bi-layer coatings

    Science.gov (United States)

    Tessarolo, Enrico; Corso, Alain Jody; Böttger, Roman; Martucci, Alessandro; Pelizzo, Maria G.

    2017-09-01

    Future space missions will operate in very harsh and extreme environments. Optical and electronics components need to be optimized and qualified in view of such operational challenges. This work focuses on the effect of low alpha particles irradiation on coatings. Low energy He+ (4 keV and 16 keV) ions have been considered in order to simulate in laboratory the irradiation of solar wind (slow and fast components) alpha particles. Mono- and proper bi-layers coatings have been investigated. The experimental tests have been carried out changing doses as well as fluxes during the irradiation sessions. Optical characterization in the UV-VIS spectral range and superficial morphological analysis have performed prior and after irradiation.

  9. Preparation and characterization of Bi-2223 tapes

    International Nuclear Information System (INIS)

    Hense, K.; Kirchmayr, H.; Kovac, P.; Lackner, R.; Mueller, M.; Pachla, W.; Pitel, J.; Polak, M.; Usak, P.

    2003-01-01

    In a concerted action between Austrian, Slovakian and Polish research institutes Bi-2223 tapes have been prepared and characterized by different physical methods. Metallographic studies by optical as well as electron microscopy, measurements of critical current (angle dependent) and losses have been performed. Properties of individual filaments extracted from multifilamentary tapes were also studied. Uniformity of local I C of these filaments were considerably lower than that of the whole tape. This indicates that improvement of filament homogeneity could improve the over all J C in tapes. The application of these tapes for optimized magnet coils will also be discussed. From these investigations a better understanding of the mechanisms, limiting the critical current could be achieved and more optimized preparation methods can be envisioned

  10. Electrical properties of V205-ZnO-TeO2 glasses. V205-ZnO-TeO2 kei garasu no denki dendo

    Energy Technology Data Exchange (ETDEWEB)

    Mori, H; Igarashi, J; Sakata, H [Tokai Univ., Tokyo (Japan). Faculty of Engineering

    1993-12-01

    It is known that glasses contained Transition Metal Oxide (TMO) such as V2O5 show a semi-conductivity, those conductive mechanism has been understood according to the Small Polaron Hopping (SPH) theory developed by Mott and Austin. Authors investigated the glass formation regions, de-conductivity([sigma]) and the conductive mechanism for V2O5-Bi2O3-TeO2 glasses as a tellurite glass containing the TMO. It was clarified that the adiabatic SPH and the non-adiabatic SPH are satisfied for the glasses with V2O5>50 mol% and V2O5<50 mol%, respectively. In this study, the electrical properties of V2O5-ZnO-TeO2 glasses were investigated, and the SPH conductions were considered from the standpoints of the polaron band width J, carrier mobility [mu], carrier density Nc. The conductive mechanism and dependence of V2O5 density on Seebeck coefficients Q were clarified in which a formation region of V2O5 is from 30 to 60 mol%. 40 refs., 9 figs., 2 tabs.

  11. Condensation energy density in Bi-2212 superconductors

    International Nuclear Information System (INIS)

    Matsushita, Teruo; Kiuchi, Masaru; Haraguchi, Teruhisa; Imada, Takeki; Okamura, Kazunori; Okayasu, Satoru; Uchida, Satoshi; Shimoyama, Jun-ichi; Kishio, Kohji

    2006-01-01

    The relationship between the condensation energy density and the anisotropy parameter, γ a , has been derived for Bi-2212 superconductors in various anisotropic states by analysing the critical current density due to columnar defects introduced by heavy ion irradiation. The critical current density depended on the size of the defects, determined by the kind and irradiation energy of the ions. A significantly large critical current density of 17.0 MA cm -2 was obtained at 5 K and 0.1 T even for the defect density of a matching field of 1 T in a specimen irradiated with iodine ions. The dependence of the critical current density on the size of the defects agreed well with the prediction from the summation theory of pinning forces, and the condensation energy density could be obtained consistently from specimens irradiated with different ions. The condensation energy density obtained increased with decreasing γ a over the entire range of measurement temperature, and reached about 60% of the value for the most three-dimensional Y-123 observed by Civale et al at 5 K. This gives the reason for the very strong pinning in Bi-2212 superconductors at low temperatures. The thermodynamic critical field obtained decreased linearly with increasing temperature and extrapolated to zero at a certain characteristic temperature, T * , lower than the critical temperature, T c . T * , which seems to be associated with the superconductivity in the block layers, was highest for the optimally doped specimen. This shows that the superconductivity becomes more inhomogeneous as the doped state of a superconductor deviates from the optimum condition

  12. BOREAS TE-17 Production Efficiency Model Images

    Data.gov (United States)

    National Aeronautics and Space Administration — A BOREAS version of the Global Production Efficiency Model(www.inform.umd.edu/glopem) was developed by TE-17 to generate maps of gross and net primary production,...

  13. Linear accelerators for TeV colliders

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1985-05-01

    This paper summarizes four tutorial lectures on linear electron accelerators: Electron Linacs for TeV Colliders, Emittance and Damping Rings, Wake Fields: Basic Concepts, and Wake Field Effects in Linacs

  14. Intern transport beter te plannen met computer

    NARCIS (Netherlands)

    Annevelink, E.

    1999-01-01

    Verbetering van intern transport in de potplantenteelt. Door getoetste vuistregels te combineren met toegepaste wiskunde is automatische planning van het intern transport binnen handbereik. Dit leidt tot minder transportbewegingen en tijdsbesparing bij het plannen

  15. Perspective on TeV-scale physics

    International Nuclear Information System (INIS)

    Chanowitz, M.S.

    1989-02-01

    These lectures review theoretical motivations and experimental prospects for the study of TeV-scale physics. Three clues to the importance of TeV physics are discussed: implications of quantum corrections for the masses of a fourth generation quark-lepton family, the gauge hierarchy problem and known solutions, and implications of symmetry and unitarity for the symmetry-breaking sector of the electroweak gauge theory. The experimental prospects are reviewed with emphasis on the multi-TeV pp colliders that may be built in the 1990's. The topics include new phenomena that might occur - e.g., a fourth generation, heavy gauge bosons, composite structure, and supersymmetry - as well as the signals of the unknown SU(2)/sub L/ /times/ U(1)/sub Y/ breaking mechanism that must occur within the TeV domain. 96 refs., 21 figs

  16. Hoe leer je iemand effectief te leren?

    NARCIS (Netherlands)

    Kester, Liesbeth; Koper, Rob; Gijselaers, Jérôme; Bahreini, Kiavash; De Vries, Fred; Wetzels, Sandra; Kirschner, Paul A.; Berkhout, Jeroen; Storm, Jeroen

    2012-01-01

    Kester, L., Koper, R., Gijselaers, J., Bahreini, K., De Vries, F., Berkhout, J., & Storm, J. (2012, 30 maart). Hoe leer je iemand effectief te leren? Masterclass in de OpenU community. Open universiteit, Heerlen, Nederland. Beschikbaar op

  17. TeSLA e-assessment workshop

    NARCIS (Netherlands)

    Janssen, José

    2016-01-01

    Presentatie ten behoeve van de e-assessment workshop voor docenten van de Open Universiteit Nederland betrokken in de eerste TeSLA pilot. Topics: toetsfraude, toetsdesign, technologie voor authenticatie en verificatie van auteurschap.

  18. Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal

    International Nuclear Information System (INIS)

    He, Yihui; Jie, Wanqi; Xu, Yadong; Wang, Tao; Zha, Gangqiang; Yu, Pengfei; Zheng, Xin; Zhou, Yan; Liu, Hang

    2012-01-01

    The fine morphologies of microscale Te inclusions in CdZnTe single crystal were investigated to reveal their shape evolution. Such inclusions from crystal ingots with different post-growth cooling rates were analyzed using scanning electron microscopy after surface treatment. A tetrakaidecahedron model embodying {1 0 0} and {1 1 1} matrix facets was developed to interpret the form of the Te inclusions. An entire shape evolution process was also proposed where the final configuration of the Te inclusions was a tetrahedron comprising {1 1 1}B facets.

  19. CuGaTe2-CuAlTe2 system

    International Nuclear Information System (INIS)

    Bodnar', I.V.

    2003-01-01

    The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

  20. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.