Decrease of FIB-induced lateral damage for diamond tool used in nano cutting

Energy Technology Data Exchange (ETDEWEB)

Wu, Wei [State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072 (China); Xu, Zongwei, E-mail: zongweixu@163.com [State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072 (China); Fang, Fengzhou, E-mail: fzfang@gmail.com [State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072 (China); Liu, Bing; Xiao, Yinjing; Chen, Jinping [State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072 (China); Wang, Xibin [School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Liu, Hongzhong [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China)

2014-07-01

Highlights: • We mainly aim to characterize and decrease the FIB-induced damage on diamond tool. • Raman and XPS methods were used to characterize the nanoscale FIB-induced damage. • Lower energy FIB can effectively lessen the FIB-induced damage on diamond tool. • The diamond tools’ performance was greatly improved after FIB process optimization. • 6 nm chip thickness of copper was achieved by diamond tool with 22 nm edge radius. - Abstract: Diamond cutting tools with nanometric edge radius used in ultra-precision machining can be fabricated by focused ion beam (FIB) technology. However, due to the nanoscale effects, the diamond tools performance and the cutting edge lifetime in nano cutting would be degraded because of the FIB-induced nanoscale lateral damage. In this study, the methods of how to effectively characterize and decrease the FIB-induced lateral damage for diamond tool are intensively studied. Based on the performance optimization diamond machining tools, the controllable chip thickness of less than 10 nm was achieved on a single-crystal copper in nano cutting. In addition, the ratio of minimum thickness of chip (MTC) to tool edge radius of around 0.3–0.4 in nano cutting is achieved. Methods for decreasing the FIB-induced damage on diamond tools and adding coolant during the nano cutting are very beneficial in improving the research of nano cutting and MTC. The nano cutting experiments based on the sharp and high performance of diamond tools would validate the nano cutting mechanisms that many molecular dynamic simulation studies have put forward and provide new findings for nano cutting.

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Science.gov (United States)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via LP-MOVPE

International Nuclear Information System (INIS)

Miyake, Hideto; Yamaguchi, Motoo; Haino, Masahiro

2000-01-01

A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window - 2/2 microm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.

2010-01-21

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

Science.gov (United States)

Duan, Xiaoling; Zhang, Jincheng; Xiao, Ming; Zhang, Jinfeng; Hao, Yue

2018-05-01

We demonstrate a GaN growth method using microrod sidewall epitaxial lateral overgrowth (MSELO) on a close-packed microrod template by a nonlithographic technique. The density and distribution of threading dislocations were determined by the density and distribution of microrods and the nucleation model. MSELO exhibited two different nucleation models determined by the direction and degree of substrate misorientation and the sidewall curvature: one-sidewall and three-sidewall nucleation, predicting the dislocation density values. As a result, the threading dislocation density was markedly decreased from 2 × 109 to 5 × 107 cm‑2 with a small coalescence thickness of ∼2 µm for the close-packed 3000 nm microrod sample.

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

International Nuclear Information System (INIS)

Sun, Wen; Xu, Hongyi; Guo, Yanan; Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati; Zou, Jin

2013-01-01

Simultaneous growth of 〈111〉 B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111) B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111) B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111) B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth

Vapor-solid-solid growth mechanism driven by an epitaxial match between solid Au Zn alloy catalyst particle and Zn O nano wire at low temperature

International Nuclear Information System (INIS)

Campos, Leonardo C.; Tonezzer, Matteo; Ferlauto, Andre S.; Magalhaes-Paniago, Rogerio; Oliveira, Sergio; Ladeira, Luiz O.; Lacerda, Rodrigo G.

2008-01-01

Nowadays, the growth of nano materials, like nano wires and nano tubes, is one of the key research areas of nano technology. However, a full picture of the growth mechanism of these quasi-one dimensional systems still needs to be achieved if these materials are to be applied electronics, biology and medicinal fields. Nevertheless, in spite of considerable advances on the growth of numerous nano wires, a clear understanding of the growth mechanism is still controversial and highly discussed. The present work provides a comprehensive picture of the precise mechanism of Zn O vapor-solid-solid (VSS) nano wire growth at low temperatures and gives the fundamental reasons responsible. We demonstrate by using a combination of synchrotron XRD and high resolution TEM that the growth dynamics at low temperatures is not governed by the well-known vapor-liquid solid (VLS) mechanisms. A critical new insight on the driving factor of VSS growth is proposed in which the VSS process occurs by a solid diffusion mechanism that is driven by a preferential oxidation process of the Zn inside the alloy catalyst induced by an epitaxial match between the Zn O(10-10) plane and the γ-Au Zn(222) plane. We believe that these results are not only important for the understanding of Zn O nano wire growth but could also have significant impact on the understanding of growth mechanisms of other nano wire systems. (author)

Temperature dependence of optical transitions in Al xGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Caballero-Rosas, A.; Mejia-Garcia, C.; Contreras-Puente, G.; Lopez-Lopez, M.

2005-01-01

Quantum well (QW) structures of Al x Ga 1-x As/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl 2 -etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 deg. C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Paessler model

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

Science.gov (United States)

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

2015-01-01

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

Directory of Open Access Journals (Sweden)

Peng Wang

2012-06-01

Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

Growth and characterization of Ge nano-structures on Si(113) by adsorbate-mediated epitaxy; Wachstum und Charakterisierung von Ge-Nanostrukturen auf Si(113) durch Adsorbat-modifizierte Epitaxie

Energy Technology Data Exchange (ETDEWEB)

Clausen, T.

2006-11-15

In the work presented here Ge nano-structures on Si(113) substrates have been grown by adsorbate-mediated epitaxy at sample temperatures between 400 C and 700 C. The Ge nano-islands and nano-layers have been investigated regarding their atomic reconstruction, morphology, strain state, chemical composition and defect structure. Various in-situ and ex-situ experimental techniques have been used, as there are low-energy electron diffraction, low-energy electron microscopy, X-ray photoemission electron microscopy, spot profile analysis low-energy electron diffraction, grazing incidence X-ray diffraction, scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. On a clean Si(113) surface Ge preferentially nucleates at surface step edges and forms a wetting layer exhibiting a Ge-(2 x 2) surface reconstruction. With increasing growth temperature the Ge islands are elongated in the [33 anti 2] direction. Simultaneously, the average island size increases with decreasing island density. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. At 600 C the Si concentration of the islands amounts to about 41% and the residual lattice strain of the islands is found to about 23 %. The adsorption of Gallium on a clean Si(113) substrate leads to the formation of well ordered surface facets in the [1 anti 10] direction with a periodicity of about 43 nm in the [33 anti 2] direction. From reciprocal space maps in different ({kappa} {sub perpendicular} {sub to} -{kappa} {sub parallel}) planes both facet angles are determined to be about 9.8 with respect to the [113] direction. Thus the facet orientations are identified to be (112) and (115), showing (6 x 1) and (4 x 1) surface reconstructions, respectively. Ge deposition on the faceted Si(113) leads to a high density of ordered 3D Ge nano-islands beaded at the surface facets. The size of these islands is

Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

International Nuclear Information System (INIS)

Dobosz, D.; Zytkiewicz, Z.R.; Jakiela, R.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Piotrowski, T.T.; Barcz, A.

2005-01-01

The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750 C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580 C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480 C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

Science.gov (United States)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

International Nuclear Information System (INIS)

Shieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung

2015-01-01

In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic chemical vapor deposition. The effect of in-situ Ti metal nitridation on the performance of these InGaN-based LEDs was then investigated. It was very clear that the use of the nitrided Ti buffer layer (NTBL) induced the formation of a nanoscale epitaxial lateral overgrowth layer during the epitaxial growth. When evaluated by Raman spectroscopy, this epi-layer exhibited large in-plane compressive stress releasing with a Raman shift value of 567.9 cm -1 . Cathodoluminescence spectroscopy and transmission electron microscopy results indicated that the InGaN-based LEDs with an NTBL have improved crystal quality, with a low threading dislocations density being yielded via the strain relaxation in the InGaN-based LEDs. Based on the results mentioned above, the electroluminescence results indicate that the light performance of InGaN-based LEDs with an NTBL can be enhanced by 45% and 42% at 20 mA and 100 mA, respectively. These results suggest that the strain relaxation and quality improvement in the GaN epilayer could be responsible for the enhancement of emission power. - Highlights: • The crystal-quality of InGaN-based LEDs with NTBL by NELOG was improved. • The InGaN-based LEDs with NTBL have strain releases by NELOG. • The optical properties of InGaN-based LEDs were shown by CL and EL measurements

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

Science.gov (United States)

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

Science.gov (United States)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Epitaxial patterning of thin-films: conventional lithographies and beyond

International Nuclear Information System (INIS)

Zhang, Wei; Krishnan, Kannan M

2014-01-01

Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices. (topical review)

Effect of the out-of-plane stress on the properties of epitaxial SrTiO{sub 3} films with nano-pillar array on Si-substrate

Energy Technology Data Exchange (ETDEWEB)

Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Dongmei [School of Automation, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

2015-08-21

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO{sub 3} films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO{sub 3} films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO{sub 3} films similar to PZT and other lead-based ferroelectrics can be expected.

Microscopic investigations of the optical and structural properties of nonpolar InGaN MQWs on a-plane GaN ELOG structures

Energy Technology Data Exchange (ETDEWEB)

Schwarz, Torsten; Bastek, Barbara; Hempel, Thomas; Veit, Peter; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Wernicke, Tim; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University Berlin (Germany)

2010-07-01

We present the optical and structural properties of InGaN MQWs which were grown by MOVPE on fully coalesced lateral epitaxially overgrown (ELOG) a-plane GaN on r-plane sapphire substrate and stripe masks orientated in the [0110] direction. Photoluminescence (PL) measurements exhibit a strong emission from the InGaN MQW at 3.109 eV at 4 K dominating the GaN (D{sup 0},X) emission at 3.488 eV by two orders of magnitude. The emission from basal plane stacking faults (BSF) was even more suppressed. Transmission electron microscopy showed a drastic reduction of the BSF in the lateral overgrown area (I) compared to the area of coherent growth (II). {mu}-PL and highly spatially resolved cathodoluminescence (CL) measurements revealed an intensity increase of the MQW emission by a factor of two for the defect reduced region (I) compared to the defective region (II). Also a blue shift by 20 meV of the MQW peak emission wavelength in the area (I) in comparison with defective area (II) was observed.

Self-organized nano-structuring of CoO islands on Fe(001)

Science.gov (United States)

Brambilla, A.; Picone, A.; Giannotti, D.; Riva, M.; Bussetti, G.; Berti, G.; Calloni, A.; Finazzi, M.; Ciccacci, F.; Duò, L.

2016-01-01

The realization of nanometer-scale structures through bottom-up strategies can be accomplished by exploiting a buried network of dislocations. We show that, by following appropriate growth steps in ultra-high vacuum molecular beam epitaxy, it is possible to grow nano-structured films of CoO coupled to Fe(001) substrates, with tunable sizes (both the lateral size and the maximum height scale linearly with coverage). The growth mode is discussed in terms of the evolution of surface morphology and chemical interactions as a function of the CoO thickness. Scanning tunneling microscopy measurements reveal that square mounds of CoO with lateral dimensions of less than 25 nm and heights below 10 atomic layers are obtained by growing few-nanometers-thick CoO films on a pre-oxidized Fe(001) surface covered by an ultra-thin Co buffer layer. In the early stages of growth, a network of misfit dislocations develops, which works as a template for the CoO nano-structuring. From a chemical point of view, at variance with typical CoO/Fe interfaces, neither Fe segregation at the surface nor Fe oxidation at the buried interface are observed, as seen by Auger electron spectroscopy and X-ray Photoemission Spectroscopy, respectively.

Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Hino, Tomonori; Narui, Hironobu [Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan); Takeda, Shingo; Tsusaka, Yoshiyuki; Matsui, Junji [Graduate School of Material Science, University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Hyogo (Japan); Kudo, Yoshihiro; Tomiya, Shigetaka [Materials Analysis Lab., Sony Corporation, 4-16-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Goto, Shu; Ikeda, Masao [Shiroishi Laser Ctr., Semiconductor Laser Div., Sony Corp., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734 (Japan)

2007-01-15

Using micro-beam X-ray diffraction (XRD), small c-axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO-GaN), which is a suitable underlying layer for realizing a reliable GaN-based blue-violet laser diode. By analyzing the micro-scale structure of ELO-GaN without coalescence and the ambient-temperature dependence of the tilting angle, we conclude that the small c-axis tilting is caused by compressive stress in the seed region of ELO-GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Directory of Open Access Journals (Sweden)

Yu-An Chen

2014-01-01

Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

International Nuclear Information System (INIS)

Wang, L.S.; Tripathy, S.; Wang, B.Z.; Chua, S.J.

2006-01-01

Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates

Epitaxial growth of zigzag PtAu alloy surface on Au nano-pentagrams with enhanced Pt utilization and electrocatalytic performance toward ethanol oxidation reaction

International Nuclear Information System (INIS)

Du, Cheng; Gao, Xiaohui; Zhuang, Zhihua; Cheng, Chunfeng; Zheng, Fuqin; Li, Xiaokun; Chen, Wei

2017-01-01

Highlights: • PtAu nanoalloy surface is heteroepitaxially grown on the pre-synthesized Au nano-pentagrams. • The PtAu/Au nano-pentagrams exhibit excellent electrocatalytic activity for ethanol oxidation. • The charge transfer resistance of PtAu/Au is lower than that of commercial Pt/C. • The durability and anti-poisoning ability of PtAu/Au is much better than those of commercial Pt/C - Abstract: Improving Pt utilization is of fundamental importance for many significant processes in energy conversion, which is strongly dependent on the surface structure of used catalysts. Based on the traditional Pt-on-Au system which has been proved to be an ideal nanostructure for improving the catalytic activity and stability of Pt, and the recent follow-up studies on this system, we introduce here a new strategy for fabricating Pt surface with high-index facets over the Pt-on-Au system. To achieve this goal, we elaborately designed and fabricated a unique zigzag PtAu alloy nanosurface on Au nano-pentagrams (PtAu/Au NPs) through epitaxial growth of Pt along the high-index facets on the pre-synthesized Au nano-pentagrams. Owing to the surface electronic interaction between Au and Pt and the exposed high-index facets from the unique morphology of zigzag PtAu alloy nanosurface, the as-prepared PtAu/Au NPs exhibited excellent electrocatalytic performance toward ethanol oxidation reaction (EOR) in alkaline condition. The specific activity (8.3 mA cm"−"2) and mass activity (4.4 A mg"−"1) obtained from PtAu/Au NPs are about 5.2 and 5.5 times, respectively, higher than those from commercial Pt/C for EOR.

Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots

Science.gov (United States)

Salhi, A.; Alshaibani, S.; Alaskar, Y.; Albrithen, H.; Albedri, A.; Alyamani, A.

2018-05-01

The effect of antimony incorporation in In0.11Ga0.89As overgrown layers on the optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy has been studied. The results of photoluminescence, high resolution X-ray diffraction, atomic force microscopy, power and temperature-dependent photoluminescence from 77 K to 300 K have been correlated to characterize the grown samples. The wavelength emission increases with Sb content, and it reaches ∼1367 nm and does not increase further because of Sb incorporation's saturation in the In0.11Ga0.89As layer. To redshift further the wavelength to 1432 nm, a reduction of the growth temperature of the In0.11Ga0.89As1-ySby layer from 500 °C to 440 °C was necessary. This achievement is accompanied by the transformation of the QDs distribution to 2 QDs families. The extracted activation energies suggest that the PL quenching is mainly attributed to the thermal transfer of carriers in the QDs to the higher energy levels in the defects located within the In0.11Ga0.89As1-ySby SRLs. The variation of PL FWHM with temperature was interpreted by carrier thermalization and capture among different QDs within the same QD family or between small and large QD families.

MgO monolayer epitaxy on Ni (100)

Science.gov (United States)

Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

2017-11-01

The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

Epitaxial lateral overgrowth of Ga{sub x}In{sub 1-x}P toward direct Ga{sub x}In{sub 1-x}P/Si heterojunction

Energy Technology Data Exchange (ETDEWEB)

Omanakuttan, Giriprasanth; Stergiakis, Stamoulis; Sychugov, Ilya; Lourdudoss, Sebastian; Sun, Yan-Ting [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Sahgal, Abhishek [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Department of Physics, Indian Institute of Technology Delhi, New Delhi (India)

2017-03-15

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of Ga{sub x}In{sub (1-x)}P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the Ga{sub x}In{sub (1-x)}P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG Ga{sub x}In{sub (1-x)}P layer, and Si incorporation in the vicinity of direct Ga{sub x}In{sub (1-x)}P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

Energy Technology Data Exchange (ETDEWEB)

Kawakita, Masatoshi; Okabe, Kyota [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Kimura, Takashi [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

2016-01-11

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

Vertical and lateral heterogeneous integration

Science.gov (United States)

Geske, Jon; Okuno, Yae L.; Bowers, John E.; Jayaraman, Vijay

2001-09-01

A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.

Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

KAUST Repository

Kloub, Hussam; Smith, Casey; Hussain, Muhammad Mustafa

2011-01-01

We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

KAUST Repository

Kloub, Hussam

2011-09-01

We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

Semiconductor Nano wires and Nano tubes: From Fundamentals to Diverse Applications

International Nuclear Information System (INIS)

Xiong, Q.; Grimes, C.A.; Zacharias, M.; Morral, A.F.; Hiruma, K.; Shen, G.

2012-01-01

Research in the field of semiconductor nano wires (SNWs) and nano tubes has been progressing into a mature subject with several highly interdisciplinary sub areas such as nano electronics, nano photonics, nano composites, bio sensing, optoelectronics, and solar cells. SNWs represent a unique system with novel properties associated to their one-dimensional (1D) structures. The fundamental physics concerning the formation of discrete 1D subbands, coulomb blockade effects, ballistic transport, and many-body phenomena in 1D nano wires and nano tubes provide a strong platform to explore the various scientific aspects in these nano structures. A rich variety of preparation methods have already been developed for generating well-controlled 1D nano structures and from a broad range of materials. The present special issue focuses on the recent development in the mechanistic understanding of the synthesis, the studies on electrical/optical properties of nano wires and their applications in nano electronics, nano photonics, and solar-energy harvesting. In this special issue, we have several invited review articles and contributed papers that are addressing current status of the fundamental issues related to synthesis and the diverse applications of semiconducting nano wires and nano tubes. One of the papers reviews the progress of the top-down approach of developing silicon-based vertically aligned nano wires to explore novel device architectures and integration schemes for nano electronics and clean energy applications. Another paper reviews the recent developments and experimental evidences of probing the confined optical and acoustic phonon in nonpolar semiconducting (Si and Ge) nano wires using Raman spectroscopy. The paper by K. Hiruma et al. spotlights the III semiconductor nano wires and demonstrates selective-area metal organic vapor phase epitaxy grown GaAs/In(Al)GaAs and InP/InAs/InP nano wires with heterojunctions along their axial and radial directions. The paper

Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

OpenAIRE

Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

2017-01-01

Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic?inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thic...

Introduction of Artificial Pinning Center into PLD-YBCO Coated Conductor on IBAD and Self-Epitaxial CeO2 Buffered Metal Substrate

International Nuclear Information System (INIS)

Kobayashi, H.; Yamada, Y.; Ishida, S.; Takahashi, K.; Konishi, M.; Ibi, A.; Miyata, S.; Kato, T.; Hirayama, T.; Shiohara, Y.

2006-01-01

In order to fabricate YBa2Cu3O7-x (YBCO) coated conductors with high critical current density Jc in magnetic fields, we fabricated YBCO coated conductors with artificial pinning centers by the pulsed laser deposition (PLD) method on a self epitaxial PLD-CeO2 layer and ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. Artificial pinning centers were introduced by the PLD deposition using the yttria-stabilized zirconia (YSZ) oxide target (nano-dot method) and YBCO target including YSZ particles (mixed target method). In the experiments using YSZ oxide target, YSZ nano-dots were observed. They were approximately 15 nm in height and 10 nm to 70 nm in diameter. We found that the density of nano-dots was controlled by the number of laser pulses. These samples exhibited higher Jc than YBCO films in magnetic fields. Furthermore, a similar improvement of Jc was observed in the experiments using YBCO target including YSZ particles. TEM observation revealed that columnar nano-structure made of BaZrO3 was formed during YBCO deposition and it was effective for pinning. We call this new epitaxial nano-structure 'bamboo structure' from its anisotropic growth and morphology

Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

Science.gov (United States)

2018-02-19

AFRL-AFOSR-JP-TR-2018-0012 Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures PHILIP Kim HARVARD COLLEGE PRESIDENT...21-02-2018 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      15 Aug 2015 to 14 Feb 2017 4.  TITLE AND SUBTITLE Nano Electronics on...NOTES 14.  ABSTRACT We report molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films

Aragonite infill in overgrown conceptacles of coralline Lithothamnion spp. (Hapalidiaceae, Hapalidiales, Rhodophyta): new insights in biomineralization and phylomineralogy.

Science.gov (United States)

Krayesky-Self, Sherry; Richards, Joseph L; Rahmatian, Mansour; Fredericq, Suzanne

2016-04-01

New empirical and quantitative data in the study of calcium carbonate biomineralization and an expanded coralline psbA framework for phylomineralogy are provided for crustose coralline red algae. Scanning electron microscopy (SEM) and energy dispersive spectrometry (SEM-EDS) pinpointed the exact location of calcium carbonate crystals within overgrown reproductive conceptacles in rhodolith-forming Lithothamnion species from the Gulf of Mexico and Pacific Panama. SEM-EDS and X-ray diffraction (XRD) analysis confirmed the elemental composition of these calcium carbonate crystals to be aragonite. After spore release, reproductive conceptacles apparently became overgrown by new vegetative growth, a strategy that may aid in sealing the empty conceptacle chamber, hence influencing the chemistry of the microenvironment and in turn promoting aragonite crystal growth. The possible relevance of various types of calcium carbonate polymorphs present in the complex internal structure and skeleton of crustose corallines is discussed. This is the first study to link SEM, SEM-EDS, XRD, Microtomography and X-ray microscopy data of aragonite infill in coralline algae with phylomineralogy. The study contributes to the growing body of literature characterizing and speculating about how the relative abundances of carbonate biominerals in corallines may vary in response to changes in atmospheric pCO2 , ocean acidification, and global warming. © 2016 Phycological Society of America.

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

2016-10-30

Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

Science.gov (United States)

Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

2016-04-01

The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor

Changes in some physical properties of soils in the chronosequence of self-overgrown dumps of the Sokolov quarry-dump complex, Czechia

Czech Academy of Sciences Publication Activity Database

Kuráž, V.; Frouz, Jan; Kuráž, M.; Mako, A.; Šustr, Vladimír; Cejpek, J.; Romanov, O.V.; Abakumov, E.V.

2012-01-01

Roč. 45, č. 3 (2012), s. 266-272 ISSN 1064-2293 R&D Projects: GA MŠk 2B08023 Grant - others:Russian Foundation for Basic Research(RU) 08-04-01128 Institutional support: RVO:60077344 Keywords : physical properties of soil s * chronosequence of self-overgrown dumps * Sokolov quarry-dump complex Subject RIV: EH - Ecology, Behaviour Impact factor: 0.216, year: 2012

Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps

International Nuclear Information System (INIS)

Cohen-Taguri, G.; Ruzin, A.; Goldfarb, I.

2012-01-01

We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [110] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.

Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

Science.gov (United States)

Berry Ann, N. J.; Rodak, L. E.; Kasarla, Kalyan; Yang, Nanying; Korakakis, D.

2005-10-01

In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.

Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

International Nuclear Information System (INIS)

McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

1989-01-01

This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

Effect of lateral size of graphene nano-sheets on the mechanical properties and machinability of alumina nano-composites

Czech Academy of Sciences Publication Activity Database

Porwal, H.; Saggar, Richa; Tatarko, P.; Grasso, S.; Saunders, T.; Dlouhý, Ivo; Reece, M. J.

2016-01-01

Roč. 42, č. 6 (2016), s. 7533-7542 ISSN 0272-8842 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Alumina * Graphene nano-sheets * Nano-composites * Mechanical properties * Machinability Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.986, year: 2016

Self-organized nano-structuring of CoO islands on Fe(001)

International Nuclear Information System (INIS)

Brambilla, A.; Picone, A.; Giannotti, D.; Riva, M.; Bussetti, G.; Berti, G.; Calloni, A.; Finazzi, M.; Ciccacci, F.; Duò, L.

2016-01-01

Highlights: • CoO grown on the Co(001)-p(1 × 1)O surface of a 5 ML thick Co layer on Fe(001). • The growth process does not induce Fe cation migration and/or oxidation. • A misfit dislocation network develops in the very early stages of CoO growth. • Such a network acts as a template for a three-dimensional CoO nanostructuration. • The dimensions of CoO wedding-cake square mounds scale linearly with thickness. - Abstract: The realization of nanometer-scale structures through bottom-up strategies can be accomplished by exploiting a buried network of dislocations. We show that, by following appropriate growth steps in ultra-high vacuum molecular beam epitaxy, it is possible to grow nano-structured films of CoO coupled to Fe(001) substrates, with tunable sizes (both the lateral size and the maximum height scale linearly with coverage). The growth mode is discussed in terms of the evolution of surface morphology and chemical interactions as a function of the CoO thickness. Scanning tunneling microscopy measurements reveal that square mounds of CoO with lateral dimensions of less than 25 nm and heights below 10 atomic layers are obtained by growing few-nanometers-thick CoO films on a pre-oxidized Fe(001) surface covered by an ultra-thin Co buffer layer. In the early stages of growth, a network of misfit dislocations develops, which works as a template for the CoO nano-structuring. From a chemical point of view, at variance with typical CoO/Fe interfaces, neither Fe segregation at the surface nor Fe oxidation at the buried interface are observed, as seen by Auger electron spectroscopy and X-ray Photoemission Spectroscopy, respectively.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Epitaxial strain-engineered self-assembly of magnetic nanostructures in FeRh thin films

International Nuclear Information System (INIS)

Witte, Ralf; Kruk, Robert; Molinari, Alan; Wang, Di; Brand, Richard A; Hahn, Horst; Schlabach, Sabine; Provenzano, Virgil

2017-01-01

In this paper we introduce an innovative bottom–up approach for engineering self-assembled magnetic nanostructures using epitaxial strain-induced twinning and phase separation. X-ray diffraction, 57 Fe Mössbauer spectroscopy, scanning tunneling microscopy, and transmission electron microscopy show that epitaxial films of a near-equiatomic FeRh alloy respond to the applied epitaxial strain by laterally splitting into two structural phases on the nanometer length scale. Most importantly, these two structural phases differ with respect to their magnetic properties, one being paramagnetic and the other ferromagnetic, thus leading to the formation of a patterned magnetic nanostructure. It is argued that the phase separation directly results from the different strain-dependence of the total energy of the two competing phases. This straightforward relation directly enables further tailoring and optimization of the nanostructures’ properties. (paper)

The growth of noble metals in (112-bar0)-oriented hexagonal close-packed nano-films by epitaxy on Nb(001)

International Nuclear Information System (INIS)

Hueger, E.; Osuch, K.

2005-01-01

The morphology and crystal structure of noble metal nano-films deposited on oxygen contaminated and oxygen-free Nb(001) surfaces have been studied with angle-resolved ultraviolet photoelectron spectroscopy, X-ray photo-electron diffraction, and reflection high energy electron diffraction. In the both cases a deposited noble metal film aligns its direction with the [110] direction of the Nb(001) surface. But, while a noble metal grows on an oxygen contaminated Nb(001) surface with the hexagonal close-packed (hcp) (111) planes parallel to the surface (i.e. in the (111)-oriented face centred cubic phase (fcc)), on a non-contaminated Nb(001) it grows with its hcp planes perpendicular to the surface. The latter happens because in the initial stages of the epitaxy the first two monolayers (MLs) of the noble metal grow pseudomorphically on a contamination-free Nb(001). The pseudomorphic layer is strongly extended parallel to the Nb(001) surface in comparison to its natural fcc (001) plane. As a consequence of the atomic volume conservation principle the out-of-plane lattice of the pseudomorphic layer is contracted. Thus, its body centred tetragonal (110) planes, which stay perpendicular to the surface, contract into denser-packed planes, i.e. in hcp ones. In the direction perpendicular to the surface, where the substrate does not have a direct influence on the film, the pseudomorphic layer relaxes into its natural close-packed phase, i.e. into hcp atomic planes. These planes appear as soon as the third pseudomorphic ML begins to grow. The stacking axis of the planes lies in the (100) surface of Nb and is locked by it. The fact that thick nano-films of Cu (up to 50 MLs), Ag and Au (up to 100 MLs) grow in the (112-bar0)-oriented hcp phase can be attributed to a much better fit of the hcp than of fcc stacking sequence to the four-fold symmetry of the Nb(001) surface

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

Science.gov (United States)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

Epitaxy physical principles and technical implementation

CERN Document Server

Herman, Marian A; Sitter, Helmut

2004-01-01

Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface

International Nuclear Information System (INIS)

Zhou, H.; Narayan, J.

2006-01-01

Systems containing single domain magnetic particles are of great interest in view of their possible applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this work is plan-view STEM Z-contrast imaging study of the self-assembly growth of magnetic nickel nanostructures by domain matching epitaxy under Volmer-Weber (V-W) mode. The growth was carried out using pulsed laser deposition (PLD) technique with epitaxial titanium nitride film as the template, which was in turn grown on silicon (001) substrate via domain matching epitaxy. Our results show that the base of nickel islands is rectangular with the two principal edges parallel to two orthogonal directions, which is [110] and [1-bar 1 0] for [001] oriented growth. The size distribution of the islands is relatively narrow, comparable to that obtained from self-assembled islands grown under Stranski-Krastanow (S-K) mode. A certain degree of self-organization was also found in the lateral distribution of islands: island chains were observed along the directions close to , which are also the edge directions. The interaction between neighboring islands through the island edge-induced strain field is believed to be responsible for the size uniformity and the lateral ordering

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Science.gov (United States)

Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

2009-04-01

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

Science.gov (United States)

Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

Magnetite nano-islands on Graphene

Science.gov (United States)

Anderson, Nathaniel; Zhang, Qiang; Rosenberg, Richard; Vaknin, David

X-ray magnetic circular dichroism (XMCD) of ex-situ iron nano-islands grown on graphene reveals that iron oxidation spontaneously leads to the formation of magnetite nano-particles - i.e, the formation of the inverse spinel Fe3O4. Fe islands have been grown with two different heights (20 and 75 MLs) on epitaxial graphene and we have determined their magnetic behavior both as function of temperature and applied external field. Our XAS and XMCD at an applied magnetic field of B = 5 T show that the thin film (20 MLs) is totally converted to magnetite whereas the thicker film (75 MLs) exhibits magnetite properties but also those of pure metal iron. For both samples, temperature dependence of the XMCD shows clear transitions at ~120 K consistent with the Verwey transition of bulk magnetite. XMCD at low temperatures shows a weak hysteresis and provide the average spin and angular-momentum moments, the dipolar term, and the total moment . In addition, manipulation and comparison of the XMCD data from both samples allows us to extract information about the pure iron nano-islands from the thicker sample. Ames Laboratory is supported by the U.S. DOE, BES, MSE Contract No. DE-AC02-07CH11358. APS is supported by U.S. DOE Contract No. DE-AC02-06CH11357.

Defects in degraded GaN-based laser diodes

Energy Technology Data Exchange (ETDEWEB)

Tomiya, Shigetaka [Materials Analysis Center, GPS, Sony Corporation, 2-1-1 Shin-sakuragaoka, Hodogaya, Yokohama, Kanagawa, 240-0036 (Japan); Goto, Shu; Takeya, Motonobu; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan)

2003-11-01

We investigate degraded GaN-based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The dislocation density in the wing region of the ELO is of the order of 10{sup 6}/cm{sup 2} and there are approximately ten threading dislocations in the laser stripe. Neither dislocation multiplication from the threading dislocations nor any structural changes of the threading dislocations were observed in the devices, which were degraded within approximately one hundred hours under 30 mW continuous operation at 25 C. We can, therefore, conclude that degradation in GaN-based LDs is not responsible for the recombination enhanced dislocation motion that is usually observed in zincblende structure-based LDs. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of TMAH Etching Duration on the Formation of Silicon Nano wire Transistor Patterned by AFM Nano lithography

International Nuclear Information System (INIS)

Hutagalung, S.D.; Lew, K.C.

2012-01-01

Atomic force microscopy (AFM) lithography was applied to produce nano scale pattern for silicon nano wire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nano patterns. A conductive AFM tip was used to grow the silicon oxide nano patterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nano wire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nano wire transistor structure has been investigated. A completed silicon nano wire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nano wire transistor consists of a silicon nano wire that acts as a channel with source and drain pads. A lateral gate pad with a nano wire head was fabricated very close to the channel in the formation of transistor structures. (author)

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

Science.gov (United States)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

2016-01-07

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

Highly ordered FEPT and FePd magnetic nano-structures: Correlated structural and magnetic studies

International Nuclear Information System (INIS)

Lukaszew, Rosa Alejandra; Cebollada, Alfonso; Clavero, Cesar; Garcia-Martin, Jose Miguel

2006-01-01

The micro-structure of epitaxial FePt and FePd films grown on MgO (0 0 1) substrates is correlated to their magnetic behavior. The FePd films exhibit high chemical ordering and perpendicular magnetic anisotropy. On the other hand FePt films exhibit low chemical ordering, with nano-grains oriented in two orthogonal directions, forcing the magnetization to remain in the plane of the films

Epitaxial growth of hybrid nanostructures

Science.gov (United States)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

DEFF Research Database (Denmark)

Kuznetsova, Nadezda; Kulkova, Irina; Semenova, Elizaveta

2014-01-01

Selective area etching and growth in the metalorganic vapor phase epitaxy (MOVPE) reactor on nano-scale structures have been examined. Using different mask orientations, crystallographic dependent etching of InP can be observed when carbon tetrabromide (CBr4) is used as an etchant. Scanning...

Nanoscale abnormal grain growth in (001) epitaxial ceria

International Nuclear Information System (INIS)

Solovyov, Vyacheslav F.; Develos-Bagarinao, Katherine; Nykypanchuk, Dmytro

2009-01-01

X-ray reciprocal-space mapping and atomic force microscopy (AFM) are used to study kinetics and mechanisms of lateral grain growth in epitaxial (001) ceria (CeO 2 ) deposited by pulsed laser deposition on (001) yttria-stabilized zirconia (YSZ) and (12 lowbar 10) (r-cut) sapphire. Rate and character of the grain growth during postannealing at 1050 deg. C are found to be strongly dependent on the type of the epitaxial substrate. Films deposited on YSZ exhibit signatures of normal grain growth, which stagnated after the lateral grain size reaches 40 nm, consistent with the grain-boundary pinning by the thermal grooving. In contrast, when r-cut sapphire substrate was used, abnormal (secondary) grain growth is observed. A small population of grains grow to well over 100 nm consuming smaller, 100 nm large (001) terminations and rendering the sample single-crystalline quality. The grain growth is accompanied by reduction in lateral rms strain, resulting in a universal grain size--rms strain dependence. Analysis of the AFM and x-ray diffraction data leads to the conclusion that bimodal initial grain population consisting of grains with very different sizes is responsible for initiation of the abnormal growth in (001) CeO 2 films on r-cut sapphire. Due to different surface chemistry, when a YSZ substrate is used, the initial grain distribution is monomodal, therefore only normal growth is active. We demonstrate that a 2.2 deg. miscut of the sapphire substrate eliminates the large-grain population, thus suppressing abnormal grain growth. It is concluded that utilization of abnormal grain growth is a promising way for synthesis of large (001) ceria terminations.

Epitaxial growth of branched {alpha}-Fe{sub 2}O{sub 3}/SnO{sub 2} nano-heterostructures with improved lithium-ion battery performance

Energy Technology Data Exchange (ETDEWEB)

Zhou, Weiwei; Cheng, Chuanwei; Jia, Xingtao; Yu, Ting; Fan, Hong Jin [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 (Singapore); Liu, Jinping; Jiang, Jian [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, Wuhan 430079 (China); Tay, Yee Yan; Hng, Huey Hoon [School of Materials Science and Engineering, Nanyang Technological University, 639798 (Singapore); Zhang, Jixuan; Gong, Hao [Department of Materials Science and Engineering, National University of Singapore, 117576 (Singapore)

2011-07-08

We report the synthesis of a novel branched nano-heterostructure composed of SnO{sub 2} nanowire stem and {alpha}-Fe{sub 2}O{sub 3} nanorod branches by combining a vapour transport deposition and a facile hydrothermal method. The epitaxial relationship between the branch and stem is investigated by high resolution transmission electron microscopy (HRTEM). The SnO{sub 2} nanowire is determined to grow along the [101] direction, enclosed by four side surfaces. The results indicate that distinct crystallographic planes of SnO{sub 2} stem can induce different preferential growth directions of secondary nanorod branches, leading to six-fold symmetry rather than four-fold symmetry. Moreover, as a proof-of-concept demonstration of the function, such {alpha}-Fe{sub 2}O{sub 3}/SnO{sub 2} composite material is used as a lithium-ion batteries (LIBs) anode material. Low initial irreversible loss and high reversible capacity are demonstrated, in comparison to both single components. The synergetic effect exerted by SnO{sub 2} and {alpha}-Fe{sub 2}O{sub 3} as well as the unique branched structure are probably responsible for the enhanced performance. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial growth of CZT(S,Se) on silicon

Science.gov (United States)

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

Bridging “green gap” of LEDs: Giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals

KAUST Repository

Tsai, Yu-Lin

2015-11-23

Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is so-called “green gap”. In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boosting light extraction efficiency of LEDs with an enhancement of 78% but also collimating the view angle of LEDs from 131.5゜to 114.0゜. This could be because the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs points the way towards a promising avenue of solid-state lighting.

Bridging “green gap” of LEDs: Giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals

KAUST Repository

Tsai, Yu-Lin; Liu, Che-Yu; Krishnan, Chirenjeevi; Lin, Da-Wei; Chu, You-Chen; Chen, Tzu-Pei; Shen, Tien-Lin; Kao, Tsung-Sheng; Charlton, Martin; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung; He, Jr-Hau

2015-01-01

Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is so-called “green gap”. In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boosting light extraction efficiency of LEDs with an enhancement of 78% but also collimating the view angle of LEDs from 131.5゜to 114.0゜. This could be because the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs points the way towards a promising avenue of solid-state lighting.

Quantum dots for future nanophotonic devices : lateral ordering, position, and number control

NARCIS (Netherlands)

Nötzel, R.; Sritirawisarn, N.; Selçuk, E.; Wang, H.; Yuan, J.

2009-01-01

We review our recent advances in the lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots based on self-organized anisotropic strain engineering, growth on patterned substrates, and selective area growth.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

Science.gov (United States)

Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

2015-09-04

We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

1D Nano materials 2012

International Nuclear Information System (INIS)

Yanqiu Zhu, Y.; Ma, R.; Whitby, R.; Acquah, S.

2013-01-01

We witnessed an initial hyped period and enthusiasm on carbon nano tubes in the 1990s later went through a significant expansion into nano tubes of other materials (metal di chalcogenides, boron nitride, etc.) as well as various nano wires and nano rods. While much of the hype might have gone, the research on one-dimensional (1D) nano materials has matured as one of the most active research areas within the nano science and nano technology community, flourishing with ample, exciting, and new research opportunities. Just like any other research frontier, researchers working in the 1D nano materials field are constantly striving to develop new fundamental science as well as potential applications. It remains a common belief that versatility and tunability of 1D nano materials would challenge many new rising tasks coming from our resource and energy demanding modern society. The traditional semiconductor industry has produced so many devices and systems from transistors, sensors, lasers, and LEDs to more sophisticated solar panels, which are now part of our daily lives. By down sizing the core components or parts to 1D form, one might wonder how fundamentally the dimensionality and morphology would impact the device performance, this is, as always, requiring us to fully understand the structure-property relationship in 1D nano materials. It may be equally crucial in connecting discovery-driven fundamental science to market-driven technology industry concerning potentially relevant findings derived from these novel materials. The importance of a platform that allows active researchers in this field to present their new development in a timely and efficient manner is therefore self-evident. Following the success of two early special issues devoted to 1D nano materials, this is the third one in a row organized by the same group of guest editors, attesting that such a platform has been well received by the readers

Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films

Science.gov (United States)

Zhang, Yan-ping; Liu, Hai-feng; Hu, Hai-long; Xie, Rui-shi; Ma, Guo-hua; Huo, Ji-chuan; Wang, Hai-bin

2018-02-01

LaCoO3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO3 films are epitaxially grown in accordance with the orientation of LaAlO3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO6 octahedron, the mean Co-O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO3, and the (100) oriented LaCoO3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co3+ and Co-O binding energy. The increase in the mean Co-O bond length will decrease the crystal field splitting energy of Co3+ and Co-O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO3.

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

International Nuclear Information System (INIS)

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G.

2013-01-01

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

Effectiveness of fenbendazole against later 4th-stage Strongylus vulgaris in ponies.

Science.gov (United States)

Slocombe, J O; McCraw, B M; Pennock, P W; Baird, J D

1983-12-01

Twelve pony foals (reared worm-free) were inoculated with Strongylus vulgaris. Approximately 8 weeks later, 4 of the foals were given fenbendazole (10% suspension) at a dosage rate of 10 mg/kg of body weight daily for 5 days and 4 foals were given the suspension at a dosage rate of 50 mg/kg daily for 3 days; the remaining foals were given a placebo. All treatments were administered by stomach tube. Fenbendazole was 99.6 and 97.9% effective in the 2 treatment groups, respectively, in eliminating later 4th-stage S vulgaris larvae located near the origin of major intestinal arteries. On microscopic examination of the ileocolic artery from fenbendazole-treated foals, a few larval remnants were found beneath the tunica intima in small organized mural thrombi overgrown with endothelium. It would appear that larvae are rapidly destroyed after administration of fenbendazole. A pony foal reared on pasture and with arteriographic evidence of arteritis of the cranial mesenteric and ileocolic arteries was treated with fenbendazole (10% suspension) by stomach tube at a dosage rate of 50 mg/kg of body weight daily for 3 days. By arteriographic examination made 4 weeks later, there was evidence of regression of the lesion, and at necropsy done a week later, there was no arteritis or larvae in the lumen of those arteries.

X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

International Nuclear Information System (INIS)

Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

1998-01-01

The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

2014-02-28

We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

Development of a Nanobody-Based Lateral Flow Immunoassay for Detection of Human Norovirus.

Science.gov (United States)

Doerflinger, Sylvie Y; Tabatabai, Julia; Schnitzler, Paul; Farah, Carlo; Rameil, Steffen; Sander, Peter; Koromyslova, Anna; Hansman, Grant S

2016-01-01

Human noroviruses are the dominant cause of outbreaks of acute gastroenteritis. These viruses are usually detected by molecular methods, including reverse transcriptase PCR (RT-PCR) and enzyme-linked immunosorbent assay (ELISA). Human noroviruses are genetically and antigenically diverse, with two main genogroups that are further subdivided into over 40 different genotypes. During the past decade, genogroup 2 genotype 4 (GII.4) has dominated in most countries, but recently, viruses belonging to GII.17 have increased in prevalence in a number of countries. A number of commercially available ELISAs and lateral flow immunoassays were found to have lower sensitivities to the GII.17 viruses, indicating that the antibodies used in these methods may not have a high level of cross-reactivity. In this study, we developed a rapid Nanobody-based lateral flow immunoassay (Nano-immunochromatography [Nano-IC]) for the detection of human norovirus in clinical specimens. The Nano-IC assay detected virions from two GII.4 norovirus clusters, which included the current dominant strain and a novel variant strain. The Nano-IC method had a sensitivity of 80% and specificity of 86% for outbreak specimens. Norovirus virus-like particles (VLPs) representing four genotypes (GII.4, GII.10, GII.12, and GII.17) could be detected by this method, demonstrating the potential in clinical screening. However, further modifications to the Nano-IC method are needed in order to improve this sensitivity, which may be achieved by the addition of other broadly reactive Nanobodies to the system. IMPORTANCE We previously identified a Nanobody (termed Nano-85) that bound to a highly conserved region on the norovirus capsid. In this study, the Nanobody was biotinylated and gold conjugated for a lateral flow immunoassay (termed Nano-IC). We showed that the Nano-IC assay was capable of detecting at least four antigenically distinct GII genotypes, including the newly emerging GII.17. In the clinical setting, the

Thin epitaxial silicon detectors

International Nuclear Information System (INIS)

Stab, L.

1989-01-01

Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

International Nuclear Information System (INIS)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

1996-01-01

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-06-03

We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

KAUST Repository

Chen, Junze; Wu, Xue-Jun; Gong, Yue; Zhu, Yihan; Yang, Zhenzhong; Li, Bing; Lu, Qipeng; Yu, Yifu; Han, Shikui; Zhang, Zhicheng; Zong, Yun; Han, Yu; Gu, Lin; Zhang, Hua

2017-01-01

the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs

Histopathological and morphometric studies on the hooves of dairy and beef cattle in relation to overgrown sole and laminitis.

Science.gov (United States)

Singh, S S; Murray, R D; Ward, W R

1992-10-01

In dairy cattle, histopathology of the outer hind claws with overgrown sole revealed arteriosclerosis of blood vessels at the ulcer site in the sole. The laminae did not show any hyperplasia of the epidermis and thrombi were not seen in the blood vessels. Partial or complete disappearance of onychogenic substance was observed in the sole as well as in the wall epidermis. In beef animals, typical changes suggestive of chronic laminitis were seen: these included hyperplasia of the epidermis of the laminae, thrombus formation, arteriosclerosis in the corium of the sole, the abaxial wall and the coronary corium. Morphometric analysis quantified measurements of hooves of normal, beef and dairy cattle. It may be concluded that the changes associated with overgrowth of the sole in dairy cattle are localized to the sole without involvement of the laminae and that the term laminitis is not appropriate in the condition seen in dairy cattle.

Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

Directory of Open Access Journals (Sweden)

Yuanzhou Gu

2014-04-01

Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

Epitaxial growth of rhenium with sputtering

Energy Technology Data Exchange (ETDEWEB)

Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

2006-02-21

We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

Activated Carbon Fibers "Thickly Overgrown" by Ag Nanohair Through Self-Assembly and Rapid Thermal Annealing

Science.gov (United States)

Yan, Xuefeng; Xu, Sijun; Wang, Qiang; Fan, Xuerong

2017-11-01

Anisotropic nanomaterial-modified carbon fibers attract increasing attention because of their superior properties over traditional ones. In this study, activated carbon fibers (ACFs) "thickly overgrown" by Ag nanohair were prepared through self-assembly and rapid thermal annealing. Viscose fibers with well-dispersed silver nanoparticles (AgNPs) on surfaces were first prepared through self-assembly of hyperbranched poly(amino-amine) (HBPAA)-capped AgNPs on viscose surfaces. HBPAA endowed the AgNP surfaces with negative charges and abundant amino groups, allowing AgNPs to monodispersively self-assemble to fiber surfaces. Ag nanohair-grown ACFs were prepared by sequential pre-oxidation and carbonization. Because the carbonization furnace was open-ended, ACFs are immediately transferrable to the outside of the furnace. Therefore, the Ag liquid adsorbed by ACF pores squeezed out to form Ag nanowires through thermal contraction. FESEM characterization indicated that Ag nanohairs stood on ACF surface and grew from ACF caps. XPS and XRD characterization showed that Ag successfully assembled to fiber surfaces and retained its metallic state even after high-temperature carbonization. TG analysis suggested that Ag nanohair-grown ACFs maintained their excellent thermal stabilities. Finally, the fabricated ACFs showed excellent and durable antibacterial activities, and the developed method may provide a potential strategy for preparing metal nanowire-grown ACFs.

Highly Efficient Spin-Current Operation in a Cu Nano-Ring

Science.gov (United States)

Murphy, Benedict A.; Vick, Andrew J.; Samiepour, Marjan; Hirohata, Atsufumi

2016-11-01

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

Science.gov (United States)

He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

2017-12-13

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Heinke, H.; Waag, A.; Moeller, M.O.; Regnet, M.M.; Landwehr, G. [Physikalisches Institut, Univ. Wuerzburg (Germany)

1994-01-01

For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of the substrate and the layer was systematically observed using high resolution X-ray diffraction. Reciprocal space maps point out an unusual strain state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is laterally anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Lorenzo Rigutti

2009-01-01

Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Science.gov (United States)

Zheng, Nan; Ahrenkiel, S. Phillip

2017-07-01

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and lattice images.

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

Science.gov (United States)

O'Reilly, Andrew J.; Quitoriano, Nathaniel

2018-01-01

Uniaxially strained Si1-xGex channels have been proposed as a solution for high mobility channels in next-generation MOSFETS to ensure continued device improvement as the benefits from further miniaturisation are diminishing. Previously proposed techniques to deposit uniaxially strained Si1-xGex epilayers on Si (0 0 1) substrates require multiple deposition steps and only yielded thin strips of uniaxially strained films. A lateral liquid-phase epitaxy (LLPE) technique was developed to deposit a blanket epilayer of asymmetrically strained Si97.4Ge2.6 on Si in a single step, where the epilayer was fully strained in the growth direction and 31% strain-relaxed in the orthogonal direction. The LLPE technique promoted the glide of misfit dislocations, which nucleated in a region with an orthogonal misfit dislocation network, into a region where the dislocation nucleation was inhibited. This created an array of parallel misfit dislocations which were the source of the asymmetric strain. By observing the thicknesses at which the dislocation network transitions from orthogonal to parallel and at which point dislocation glide is exhausted, the separate critical thicknesses for dislocation nucleation and dislocation glide can be determined.

Synthesis and structural characterization of coaxial nano tubes intercalated of molybdenum disulfide with carbon

International Nuclear Information System (INIS)

Reza San German, C.M.

2005-01-01

In this work the study of some fundamental aspects in the growth of unidimensional systems of coaxial nano tubes from the mold method is approached. This method is an inclusion technique of a precursor reagent into oxide nano porous alumina film (mold), and later applying some processes of synthesis it is gotten to obtain the wished material. The synthesized structures are identified later because they take place by means of the initial formation of nano tubes of MoS 2 , enclosing to carbon nano tubes by the same method, with propylene flow which generates a graphitization process that 'copy' the mold through as it flows. Binary phase MoS 2 + C nano tubes were synthesized by propylene pyrolysis inside MoS 2 nano tubes prepared by template assisted technique. The large coaxial nano tubes constituted of graphite sheets inserted between the MoS 2 layers forming the outer part, and coaxial multi wall carbon nano tubes (MWCNT) intercalated with MoS 2 inside. High resolution electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), high angle annular dark field (HAADF), gatan image filter (GIF), nano beam electron diffraction patterns (NBEDP), along with molecular dynamics simulation and quantum mechanical calculations were used to characterize the samples. The one-dimensional structures exhibit diverse morphologies such as long straight and twisted nano tubes with several structural irregularities. The inter-planar spacing between MoS 2 layers was found to increase from 6.3 to 7.4 A due to intercalation with carbon. Simulated HREM images revealed the presence of these twisted nano structures, with mechanical stretch into intercalate carbon between MoS 2 layers. Our results open up the possibility of using MoS 2 nano tubes as templates for the synthesis of new one- dimensional binary phase systems. (Author)

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

International Nuclear Information System (INIS)

Ishimaru, Manabu; Tanaka, Yuusuke; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

2009-01-01

We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

Wafer scale nano-membrane supported on a silicon microsieve using thin-film transfer technology

NARCIS (Netherlands)

Unnikrishnan, S.; Jansen, Henricus V.; Berenschot, Johan W.; Elwenspoek, Michael Curt

A new micromachining method to fabricate wafer scale nano-membranes is described. The delicate thin-film nano-membrane is supported on a robust silicon microsieve fabricated by plasma etching. The silicon sieve is micromachined independently of the thin-film, which is later transferred onto it by

Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

International Nuclear Information System (INIS)

Patel, R.B.; Chou, T.; Iqbal, Z.

2014-01-01

The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

Organometallic vapor-phase epitaxy theory and practice

CERN Document Server

Stringfellow, Gerald B

1989-01-01

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

Science.gov (United States)

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

Science.gov (United States)

Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

2008-02-01

Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

Nano-technology and nano-toxicology.

Science.gov (United States)

Maynard, Robert L

2012-01-01

Rapid developments in nano-technology are likely to confer significant benefits on mankind. But, as with perhaps all new technologies, these benefits are likely to be accompanied by risks, perhaps by new risks. Nano-toxicology is developing in parallel with nano-technology and seeks to define the hazards and risks associated with nano-materials: only when risks have been identified they can be controlled. This article discusses the reasons for concern about the potential effects on health of exposure to nano-materials and relates these to the evidence of the effects on health of the ambient aerosol. A number of hypotheses are proposed and the dangers of adopting unsubstantiated hypotheses are stressed. Nano-toxicology presents many challenges and will need substantial financial support if it is to develop at a rate sufficient to cope with developments in nano-technology.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Strain-Modulated Epitaxy

National Research Council Canada - National Science Library

Brown, April

1999-01-01

Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

Integrated lithography to prepare periodic arrays of nano-objects

International Nuclear Information System (INIS)

Sipos, Áron; Szalai, Anikó; Csete, Mária

2013-01-01

We present an integrated lithography method to prepare versatile nano-objects with variable shape and nano-scaled substructure, in wavelength-scaled periodic arrays with arbitrary symmetry. The idea is to illuminate colloid sphere monolayers by polarized beams possessing periodic lateral intensity modulations. Finite element method was applied to determine the effects of the wavelength, polarization and angle of incidence of the incoming beam, and to predict the characteristics of nano-objects, which can be fabricated on thin metal layer covered substrates due to the near-field enhancement under silica colloid spheres. The inter-object distance is controlled by varying the relative orientation of the periodic intensity modulation with respect to the silica colloid sphere monolayer. It is shown that illuminating silica colloid sphere monolayers by two interfering beams, linear patterns made of elliptical holes appear in case of linear polarization, while circularly polarized beams result in co-existent rounded objects, as more circular nano-holes and nano-crescents. The size of the nano-objects and their sub-structure is determined by the spheres diameter and by the wavelength. We present various complex plasmonic patterns made of versatile nano-objects that can be uniquely fabricated applying the inherent symmetry breaking possibilities in the integrated lithography method.

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

2011-01-01

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Aluminum nano-cantilevers for high sensitivity mass sensors

DEFF Research Database (Denmark)

Davis, Zachary James; Boisen, Anja

2005-01-01

We have fabricated Al nano-cantilevers using a very simple one mask contact UV lithography technique with lateral dimensions under 500 nm and vertical dimensions of approximately 100 nm. These devices are demonstrated as highly sensitive mass sensors by measuring their dynamic properties. Further...

Interface relaxation and band gap shift in epitaxial layers

Directory of Open Access Journals (Sweden)

Ziming Zhu

2012-12-01

Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

Nano technology

International Nuclear Information System (INIS)

Lee, In Sik

2002-03-01

This book is introduction of nano technology, which describes what nano technology is, alpha and omega of nano technology, the future of Korean nano technology and human being's future and nano technology. The contents of this book are nano period is coming, a engine of creation, what is molecular engineering, a huge nano technology, technique on making small things, nano materials with exorbitant possibility, the key of nano world the most desirable nano technology in bio industry, nano development plan of government, the direction of development for nano technology and children of heart.

Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

1987-09-01

We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

Point defect balance in epitaxial GaSb

International Nuclear Information System (INIS)

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014-01-01

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

Energy Technology Data Exchange (ETDEWEB)

Matzen, Sylivia [University of Groningen, The Netherlands; Nesterov, Okeksiy [ORNL; Rispens, Gregory [University of Groningen, The Netherlands; Heuver, J. A. [University of Groningen, The Netherlands; Bark, C [University of Wisconsin, Madison; Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Noheda, Beatriz [University of Groningen, The Netherlands

2014-01-01

Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

Nano Materials

International Nuclear Information System (INIS)

Jin, In Ju; Lee, Ik Mo; Kwon, Yeung Gu

2006-02-01

This book introduces background of nano science such as summary, plenty room at the bottom, access way to nano technique, nanoparticles using bottom-up method which are a marvel of nature, and modern alchemy : chemical synthesis of artificial nano structure, understanding of quantum mechanics, STM/AFM, nano metal powder, ceramic nanoparticles, nano structure film, manufacture of nanoparticles using reverse micelle method, carbon nano tube, sol-gel material, nano energy material, nano catalyst nano bio material technology and spintronics.

Nano Mechanical Machining Using AFM Probe

Science.gov (United States)

Mostofa, Md. Golam

and burr formations through intermittent cutting. Combining the AFM probe based machining with vibration-assisted machining enhanced nano mechanical machining processes by improving the accuracy, productivity and surface finishes. In this study, several scratching tests are performed with a single crystal diamond AFM probe to investigate the cutting characteristics and model the ploughing cutting forces. Calibration of the probe for lateral force measurements, which is essential, is also extended through the force balance method. Furthermore, vibration-assisted machining system is developed and applied to fabricate different materials to overcome some of the limitations of the AFM probe based single point nano mechanical machining. The novelty of this study includes the application of vibration-assisted AFM probe based nano scale machining to fabricate micro/nano scale features, calibration of an AFM by considering different factors, and the investigation of the nano scale material removal process from a different perspective.

Nano-technology and nano-toxicology

OpenAIRE

Maynard, Robert L.

2012-01-01

Rapid developments in nano-technology are likely to confer significant benefits on mankind. But, as with perhaps all new technologies, these benefits are likely to be accompanied by risks, perhaps by new risks. Nano-toxicology is developing in parallel with nano-technology and seeks to define the hazards and risks associated with nano-materials: only when risks have been identified they can be controlled. This article discusses the reasons for concern about the potential effects on health of ...

Epitaxial growth of lithium fluoride on the (1 1 1) surface of CaF 2

Science.gov (United States)

Klumpp, St; Dabringhaus, H.

1999-08-01

Growth of lithium fluoride by molecular beam epitaxy on the (1 1 1) surface of calcium fluoride crystals was studied by TEM and LEED for crystal temperatures from 400 to 773 K and impinging lithium fluoride fluxes from 3×10 11 to 3×10 14 cm -2 s -1. Growth starts, usually, at the steps on the (1 1 1) surface of CaF 2. For larger step distances and at later growth stages also growth on the terraces between the steps is found. Preferably, longish, roof-like crystallites are formed, which can be interpreted by growth of LiF(2 0 1¯)[0 1 0] parallel to CaF 2(1 1 1)[ 1¯ 0 1]. To a lesser extent square crystallites, i.e. growth with LiF(0 0 1), and, rarely, three-folded pyramidal crystallites, i.e. growth with LiF(1 1 1) parallel to CaF 2(1 1 1), are observed. While the pyramidal crystallites show strict epitaxial orientation with LiF[ 1¯ 0 1]‖CaF 2[ 1¯ 0 1] and LiF[ 1¯ 0 1]‖CaF 2[1 2¯ 1], only about 80% of the square crystallites exhibit an epitaxial alignment, where LiF[1 0 0]‖CaF 2[ 1¯ 0 1] is preferred to LiF[1 1 0]‖CaF 2[ 1¯ 0 1]. The epitaxial relationships are discussed on the basis of theoretically calculated adsorption positions of the lithium fluoride monomer and dimer on the terrace and at the steps of the CaF 2(1 1 1) surface.

All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

2016-01-28

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

Nano-/micro metallic wire synthesis on Si substrate and their characterization

International Nuclear Information System (INIS)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, Surinder; Kanjilal, Dinakar; Chakarvarti, Shiv Kumar

2014-01-01

Nano-/micro wires of copper are grown on semiconducting Si substrate using the template method. It involves the irradiation of 8 um thick polymeric layer coated on Si with150 MeV Ni ion beam at a fluence of 2E8. Later, by using the simple technique of electrodeposition, copper nano-/micro wires were grown via template synthesis. Synthesized wires were morphologically characterized using SEM and electrical characterization was carried out by finding I-V plot

Carbon nano tubes embedded in polymer nano fibers

International Nuclear Information System (INIS)

Dror, Y.; Kedem, S.; Khalfin, R.L.; Paz, Y.; Cohenl, Y.; Salalha, Y.; Yarin, A.L.; Zussman, A.

2004-01-01

Full Text: The electro spinning process was used successfully to embed Multi-walled carbon nano tubes (MWCNTs) and single-walled carbon nano tubes (SWCNTs) in a matrix of poly(ethylene oxide) (PEO) forming composite nano fibers. Initial dispersion of SWCNTs in water was achieved by the use of an amphphilic alternating copolymer of styrene and sodium maleate. MWNT dispersion was achieved by ionic and nonionic surfactants. The distribution and conformation of the nano tubes in the nano fibers were studied by transmission electron microscopy (TEM). Oxygen plasma etching was used to expose the nano tubes within the nano fibers to facilitate direct observation. Nano tube alignment within the nano fibers was shown to depend strongly on the quality of the initial dispersions. Well-dispersed and separated nano tubes were embedded in a straight and aligned form while entangled non-separated nano tubes were incorporated as dense aggregates. X-ray diffraction demonstrated a high degree of orientation of the PEO crystals in the electro spun nano fibers with embedded SWCNTs, whereas incorporation of MVCNTs had a detrimental effect on the polymer orientation. Composite polymer nano fibers containing dispersed phases of nanometric TiO 2 particles and MWCNTs were also prepared electro spinning. In this case, the polymer matrix was poly(acrylonitrile) (PAN). The morphology and possible applications of these composite nano fibers will be discussed

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0 �

Reclamation of a molecular beam epitaxy system and conversion for oxide epitaxy

International Nuclear Information System (INIS)

Carver, Alexander G.; Henderson, Walter; Doolittle, W. Alan

2008-01-01

An early 1980s vintage molecular beam epitaxy system, a Varian Gen II system, originally used for HgCdTe epitaxy, was converted into a system capable of growing thin-film complex metal oxides. The nature of some of the alternative oxides requires a thorough cleaning and, in some cases, complete replacement of system components. Details are provided regarding the chemistry of the etchants used, safety requirements for properly handling, and disposal of large quantities of etchants and etch by-products, and components that can be reused versus components that require replacement are given. Following the given procedures, an ultimate base pressure of 2x10 -10 Torr was obtained. Films grown in the system after reclamation contained no evidence of previously present materials down to the detection limit of secondary ion mass spectrometry

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

International Nuclear Information System (INIS)

Chen, S.Y.; Chen, L.J.

2006-01-01

Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

Molecular beam epitaxy a short history

CERN Document Server

Orton, J W

2015-01-01

This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

Science.gov (United States)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

International Nuclear Information System (INIS)

Chien, C.J.; Bravman, J.C.

1990-01-01

The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

Energy Technology Data Exchange (ETDEWEB)

Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2012-01-31

LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

Science.gov (United States)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2017-02-01

The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

NARCIS (Netherlands)

Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

2013-01-01

We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

International Nuclear Information System (INIS)

Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

2003-01-01

ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Maskless nano-implant of 20 keV Ga{sup +} in bulk Si(1 0 0) substrates

Energy Technology Data Exchange (ETDEWEB)

Milazzo, R.G., E-mail: gabriella.milazzo@gmail.com [IMM-CNR, Strada VIII 5, Zona Industriale, I-95121 Catania (Italy); D’Arrigo, G.; Mio, A.M.; Rimini, E.; Spinella, C. [IMM-CNR, Strada VIII 5, Zona Industriale, I-95121 Catania (Italy); Peto, L.; Nadzeyka, A.; Bauerdick, S. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

2014-12-15

Multidirectional SPEG (Solid Phase Epitaxial Growth) of silicon has been investigated in micro and nanoamorphous structures generated on a crystalline substrate by a nano-sized ion beam, Gaussian shaped and with a standard deviation of about 5 nm. The 20 keV Ga{sup +} ions were implanted at a fluence of 5 × 10{sup 14} ions cm{sup −2} in a bulk Si(1 0 0) single crystal. Two structures were used for the implants: circular regions of 100 nm and 1 μm diameters respectively and straight lines 10 nm in width and few microns in length along (1 0 0) or (1 1 0) directions. The lateral spread of ions has been taken into account in the damage estimation. Transmission Electron Microscopy indicates that the structures are made of an amorphous core surrounded by a defective and filamentary shell. The recovery of the damaged outer regions promptly occurs during the early stages of the thermal treatment at 500–600 °C for all the structures. By prolonging annealing time, re-crystallization of the amorphous cores is achieved too by the movement of the underneath crystal–amorphous interface. The re-growth is almost defects free when the contribution of the crystalline seed below the structures is present, defective and twin mediated if it misses as in the thinnest regions of the specimen.

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Webster, R F; Soundararajah, Q Y; Griffiths, I J; Cherns, D; Novikov, S V; Foxon, C T

2015-01-01

Transmission electron microscopy is used to examine the structure and composition of In x Ga 1−x N nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. (paper)

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

Abstracts of 4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology

International Nuclear Information System (INIS)

2001-01-01

4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology is the periodically held forum for discussion the problems connected with manufacturing of different nanostructures (thin films, quantum wells, quantum dots) needed in microelectronics. Preparation of such materials with desirable optical, electrical and magnetic properties being determined by their chemical composition and crystal structure has been discussed in detail during the workshop sessions. Optimization of crystal growth methods such as VPE and MBE from the view point of obtained material properties has also been extensively discussed

Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

Directory of Open Access Journals (Sweden)

Ge FF

2010-01-01

Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

International Nuclear Information System (INIS)

Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

2015-01-01

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

2015-08-31

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

2007-01-01

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

International Nuclear Information System (INIS)

Li Qi; Wang Wei-Dong; Liu Yun; Wei Xue-Ming

2012-01-01

A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL LDMOS). The mechanism of the improved breakdown characteristic is that the high electric field around the drain is reduced by substrate reverse bias, which causes the redistribution of the bulk electric field in the drift region, and the vertical blocking voltage is shared by the drain side and the source side. The numerical results indicate that the trade-off between breakdown voltage and on-resistance of the proposed device is improved greatly in comparison to that of the conventional LDMOS. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Indentation analysis of nano-particle using nano-contact mechanics models during nano-manipulation based on atomic force microscopy

International Nuclear Information System (INIS)

Daeinabi, Khadijeh; Korayem, Moharam Habibnejad

2011-01-01

Atomic force microscopy is applied to measure intermolecular forces and mechanical properties of materials, nano-particle manipulation, surface scanning and imaging with atomic accuracy in the nano-world. During nano-manipulation process, contact forces cause indentation in contact area between nano-particle and tip/substrate which is considerable at nano-scale and affects the nano-manipulation process. Several nano-contact mechanics models such as Hertz, Derjaguin–Muller–Toporov (DMT), Johnson–Kendall–Roberts–Sperling (JKRS), Burnham–Colton–Pollock (BCP), Maugis–Dugdale (MD), Carpick–Ogletree–Salmeron (COS), Pietrement–Troyon (PT), and Sun et al. have been applied as the continuum mechanics approaches at nano-scale. In this article, indentation depth and contact radius between tip and substrate with nano-particle for both spherical and conical tip shape during nano-manipulation process are analyzed and compared by applying theoretical, semiempirical, and empirical nano-contact mechanics models. The effects of adhesion force, as the main contrast point in different nano-contact mechanics models, on nano-manipulation analysis is investigated for different contact radius, and the critical point is discussed for mentioned models.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

International Nuclear Information System (INIS)

Glas, F; Patriarche, G; Harmand, J C

2010-01-01

We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

Manipulation of Dirac cones in metal-intercalated epitaxial graphene

Science.gov (United States)

Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

Science.gov (United States)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

2007-01-01

SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive

Growth and characterization of Hg 1– Cd Te epitaxial films by ...

Indian Academy of Sciences (India)

Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

Book Review: Nano physics & Nano technology

Directory of Open Access Journals (Sweden)

Abdolkhaled Zaree

2012-12-01

Full Text Available During last decades, there are a lot of emphases on studying material behavior in atomic scale. In most scientific and engineering fields, one can see the effect of nanotechnology. The aim of nanoscience is to design and fabrication of new and applicable materials. Nowadays, Nano is a popular science which chemists, physicist, doctors, engineers, financial managers and environment's fans for creating a good life via nanoscience have a great cooperation with each others. Materials in nano scale such as nanotubes and nanowires have extraordinary properties which by optimization of these properties in nano scale and then develop these properties to macro scale, they've been challenging issues. For instance, materials in nano scale improve mechanical properties of polymers and metallic materials via nano particles and on the other hand by producing a thin film on surfaces improve surface hardening. Besides, nanotechnology is in hi-tech industries such as magnetic devices, surface coating, and biomaterial, material having sensors, polymers, gels, ceramics and intelligent membrane. Nano-carbon tubes are considered intelligent due to the fact that they couple electrochemical and elastic properties simultaneously, hence have greater activation energy density in comparison with other intelligent materials. Studying nanoscience is important because it causes the life to be better. Future Materials and structures will have a lot of outstanding properties. Intelligent machines can repair, recycle and reconstruct themselves. All these features are only possible in nano zone. Nano in engineering science can provide the possibility of making light missiles for exploring space. The reduced weight can be achieved by replacing traditional materials with hybrid nanocomposites.

Stress development in particulate, nano-composite and polymeric coatings

Science.gov (United States)

Jindal, Karan

2009-12-01

The main goal of this research is to study the stress, structural and mechanical property development during the drying of particulate coatings, nano-composite coatings and VOC compliant refinish clearcoats. The results obtained during this research establish the mechanism for the stress development during drying in various coating systems. Coating stress was measured using a controlled environment stress apparatus based on cantilever deflection principle. The stress evolution in alumina coatings made of 0.4 mum size alumina particles was studied and the effect of a lateral drying was investigated. The stress does not develop until the later stages of drying. A peak stress was observed during drying and the peak stress originates due to the formation of pendular rings between the particles. Silica nanocomposite coatings were fabricated from suspension of nano sized silicon dioxide particles (20 nm) and polyvinyl alcohol (PVA) polymer. The stress in silica nano-composite goes through maximum as the amount of polymer in the coating increases. The highest final stress was found to be ˜ 110MPa at a PVA content of 60 wt%. Observations from SEM, nitrogen gas adsorption, camera imaging, and nano-indentation were also studied to correlate the coatings properties during drying to measured stress. A model VOC compliant two component (2K) acrylic-polyol refinish clearcoat was prepared to study the effects of a new additive on drying, curing, rheology and stress development at room temperature. Most of the drying of the low VOC coatings occurred before appreciable (20%) crosslinking. Tensile stress developed in the same timeframe as drying and then relaxed over a longer time scale. Model low VOC coatings prepared with the additive had higher peak stresses than those without the additive. In addition, rheological data showed that the additive resulted in greater viscosity buildup during drying.

Nano-sized magnetic instabilities in Fe/NiO/Fe(001) epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Brambilla, A [Dipartimento di Fisica-Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milan (Italy); Biagioni, P [Dipartimento di Fisica-Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milan (Italy); Rougemaille, N [National Center for Electron Microscopy, Lawrence Berkeley National Lab, Berkeley, CA 94720 (United States); Schmid, A K [National Center for Electron Microscopy, Lawrence Berkeley National Lab, Berkeley, CA 94720 (United States); Lanzara, A [Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States); Duo, L [Dipartimento di Fisica-Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milan (Italy); Ciccacci, F [Dipartimento di Fisica-Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milan (Italy); Finazzi, M [Dipartimento di Fisica-Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milan (Italy)

2006-10-25

We report on a magnetic imaging study of the Fe/NiO/Fe(001) trilayer structure, by means of X-ray photoemission electron microscopy (XPEEM) and spin-polarised low-energy electron microscopy (SPLEEM). Two different magnetic couplings between the Fe layers are observed depending on the NiO thickness being greater or smaller than a critical value. Very small magnetic domains and domain walls are observed in the top Fe layer. They are dramatically smaller than those observed in the Fe substrate, and have a convoluted topology. Furthermore they seem to be unstable with respect to an applied magnetic field for any NiO thickness except that corresponding to the transition between the different coupling regimes. The phenomenology of such magnetic nano-structures and the dependence of the magnetic behaviour of the layered structure on the NiO spacer thickness are discussed on the basis of the experimental results and of state-of-the-art theoretical models.

Nano-sized magnetic instabilities in Fe/NiO/Fe(001) epitaxial thin films

International Nuclear Information System (INIS)

Brambilla, A.; Biagioni, P.; Rougemaille, N.; Schmid, A.K.; Lanzara, A.; Duo, L.; Ciccacci, F.; Finazzi, M.

2006-01-01

We report on a magnetic imaging study of the Fe/NiO/Fe(001) trilayer structure, by means of X-ray photoemission electron microscopy (XPEEM) and spin-polarised low-energy electron microscopy (SPLEEM). Two different magnetic couplings between the Fe layers are observed depending on the NiO thickness being greater or smaller than a critical value. Very small magnetic domains and domain walls are observed in the top Fe layer. They are dramatically smaller than those observed in the Fe substrate, and have a convoluted topology. Furthermore they seem to be unstable with respect to an applied magnetic field for any NiO thickness except that corresponding to the transition between the different coupling regimes. The phenomenology of such magnetic nano-structures and the dependence of the magnetic behaviour of the layered structure on the NiO spacer thickness are discussed on the basis of the experimental results and of state-of-the-art theoretical models

Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

Directory of Open Access Journals (Sweden)

Takanori Kiguchi, Kenta Aoyagi, Yoshitaka Ehara, Hiroshi Funakubo, Tomoaki Yamada, Noritaka Usami and Toyohiko J Konno

2011-01-01

Full Text Available We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001 epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA combined with high-resolution transmission electron microscopy (HRTEM and high-angle annular dark field––scanning transmission electron microscopy (HAADF-STEM. The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain: a typical a/c-mixed domain configuration where a-domains are 20–30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.

Multiple nano elements of SCC--transition from phenomenology to predictive mechanistics

International Nuclear Information System (INIS)

Staehle, R.W.

2009-01-01

tips of cracks: discrete molecular environments, hydrogen entry and movement in metals, vacancy formation at dissolving surfaces and from dislocation interactions, effects of hydrogen on dislocation movements, preferential dissolution of alloying elements, very local stress distributions, epitaxial relationship between films and substrates, formation of very thin films, band structure, double layer interactions, reactivity of dislocations, slip interactions with surfaces, atomic bond strength as affected by environmental species, vacancy coalescence, and structure of grain and second phase boundaries as well as interactions with dislocations and solutes. It is unlikely that any one of these elements will supply quantitative predictability. Such predictability can be produced only by the integration of significant nano processes. (authors)

NanoSIMS50 analyses of Ar/18O2 plasma-treated Escherichia coli bacteria

International Nuclear Information System (INIS)

Clément, F; Lecoq, E; Duday, D; Audinot, J-N; Lentzen, E; Penny, C; Cauchie, H-M; Choquet, P; Belmonte, T

2011-01-01

Reactive oxygen species (ROS) can be produced by electrical discharges and can be transported in uncharged regions by gas flows, in the so-called afterglows. These species are well known to have bactericidal effects but interaction mechanisms that occur with living micro-organisms remain misunderstood. In order to better understand these interactions, new analysis approaches are necessary. High-lateral-resolution secondary ion mass spectrometry (NanoSIMS) is one of the most promising ways of retrieving additional information on bacteria plasma inactivation mechanisms by combining isotopic imaging of plasma-treated bacteria and the use of 18 O 2 as process gas. Indeed, this technology combines a lateral resolution of a few tens of nanometres that is sufficient to image the interior of bacteria, and a high mass resolution allowing detection of isotopes present in low quantities (a few ppm or lower) within the bacteria. The present paper deals with Ar- 18 O 2 (2%) plasma treatment, through low-pressure microwave late afterglows, of Escherichia coli bacteria and their elemental and isotopic imaging by NanoSIMS. E. coli bacteria have been exposed to this reactive medium for varying treatment duration while keeping all other parameters unchanged. Our main goal is to determine whether the quantity of 18 O fixed in treated bacteria and the NanoSIMS50 lateral resolution are sufficient to give additional information on E. coli bacteria-plasma interaction. (paper)

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Nano- and micro-electromechanical systems fundamentals of nano- and microengineering

CERN Document Server

Lyshevski, Sergey Edward

2005-01-01

NANOTECHNOLOGY AND MICROTECHNOLOGY (NANO- AND MICRO- SCIENCE, ENGINEERING AND TECHNOLOGY), AND BEYOND Introduction and Overview: From Micro- to Nano- and Beyond to Stringo-Scale Introductory Definitions to the Subjects Current Developments and Needs for Coherent Revolutionary Developments Societal Challenges and Implications NANO- AND MICROSCALE SYSTEMS, DEVICES, AND STRUCTURES Sizing Features: From Micro- to Nano-, and from Nano- to Stringo-Scale MEMS and NEMS Definitions Introduction to Taxonomy of Nano- and Microsystem Synthesis and Design Introduction to Design and Optimization of Nano- and Microsystems in the Behavioral Domain NANO- AND MICROSYSTEMS: CLASSIFICATION AND CONSIDERATION Biomimetics, Biological Analogies,and Design of NEMS and MEMS Micro- and Nanoelectromechanical Systems: Scaling Laws and Mathematical Modeling MEMS Examples and MEMS Architectures Introduction to Microfabrication and Micromachining FUNDAMENTALS OF MICROFABRICATION AND MEMS FABRICATION TECHNOLOGIES Introducti...

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2014-02-01

Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

Crystallization engineering as a route to epitaxial strain control

Directory of Open Access Journals (Sweden)

Andrew R. Akbashev

2015-10-01

Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

International Nuclear Information System (INIS)

Lahourcade, L.

2009-10-01

This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

Nano dentistry

International Nuclear Information System (INIS)

Oh, S.; Park, Y.B.; Kim, S.; Jin, S.

2014-01-01

Nano technology in dentistry has drawn many scientists’ and clinicians’ attention to significant advances in the diagnosis, treatment, and prevention of oral disease. Also, nano materials in dentistry have been studied to overcome the physical and chemical characteristics of conventional dental materials. These interesting facts are the motivation of this special issue. The presented issue provides a variety of topics in the field of dentistry such as novel nano filled composite resin, the cytotoxicity of nanoparticles deposited on orthodontic bands, the osseointegration of 3D nano scaffold, and nano surface treated implant.

Growth and characterization of Hg1–xCdxTe epitaxial films by ...

Indian Academy of Sciences (India)

Unknown

Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

The world of Nano

International Nuclear Information System (INIS)

Noh, Seung Jeong; Hyun, Jun Won; An, Yong Hyeon; Lee, Sung Uk; Jee, Hye Gu; Kim, Young Seon

2006-07-01

The contents of this book are the beginning of nano technology, definition of nano, commercialization of nano technology, prospect of nano technology, survive with nano t-, development strategy of n-t in the U.S, and Japan, Korea, and other countries, comparison of development strategy of n-t among each country, various measurement technology for practical n-t, scanning tunneling microscopy, nano device, carbon nano tube, nano belt and nano wire, application of sensor in daily life, energy, post-Genome period and using as medicine with nano bio technology.

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

Synchrotron radiation excited silicon epitaxy using disilane

International Nuclear Information System (INIS)

Akazawa, Housei; Utsumi, Yuichi

1995-01-01

Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films

Directory of Open Access Journals (Sweden)

Wujun Jin

2013-01-01

Full Text Available We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100 SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

Microwave dynamics of YBCO bi-epitaxial Josephson structures

DEFF Research Database (Denmark)

Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

1996-01-01

The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

Leonhardt, Darin; Han, Sang M. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2011-09-12

We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layer suitable for electronic and photovoltaic devices.

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

Science.gov (United States)

Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

2018-05-01

The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

Geometric factors in f.c.c. and b.c.c. metal-on-metal epitaxy

International Nuclear Information System (INIS)

Bruce, L.A.; Jaeger, H.

1978-01-01

Deposits of Ni, Au and Ag formed by condensing metal vapour in U.H.V. onto (001)W, held at a temperature Tsub(s) in the range 300K< Tsub(s)<1200 K, always form epitaxial layers. However, while Au and Ag form (001) epitaxial layers of f.c.c. single crystals, (001)d parallel to (001)s with, say, [110]d parallel to [010]s, Ni and Cu occur in two orthogonal domains, each characterized by an exclusive set of fault (or twin) planes. Within a fault plane, atoms are hexagonally close-packed and, within a domain, fault planes are normal to either [1-1-0]s or [1-10]s and a close-packed direction in the planes is normal to the substrate. The lateral stacking of the fault planes may range from random at low values of Tsub(s) to that of, say, (11-1-) planes in heavily faulted and/or twinned (110) epitaxed f.c.c. material, or of basal planes in (110) epitaxed h.c.p. material at high values of Tsub(s). The results are readily explained on the basis of a growth model developed for deposits of Ni and Cu on (001) Ag. (author)

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

International Nuclear Information System (INIS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-01-01

Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

Structural Studies of the Initial Stages of Fluoride Epitaxy on Silicon and GERMANIUM(111)

Science.gov (United States)

Denlinger, Jonathan David

The epitaxial growth of ionic insulators on semiconductor substrates is of interest due to fundamental issues of interface bonding and structure as well as to potential technological applications. The initial stages of Group IIa fluoride insulator growth on (111) Si and Ge substrates by molecular beam epitaxy are studied with the in situ combination of X-ray Photoelectron Spectroscopy (XPS) and Diffraction (XPD). While XPS probes the electronic structure, XPD reveals atomic structure. In addition, low energy electron diffraction (LEED) is used to probe surface order and a separate study using X-ray standing wave (XSW) fluorescence reveals interface cation bonding sites. Following the formation of a chemically-reacted interface layer in CaF_2 epitaxy on Si(111), the morphology of the subsequent bulk layers is found to be dependent on substrate temperature and incident flux rate. At temperatures >=600 ^circC a transition from three -dimensional island formation at low flux to laminar growth at higher flux is observed with bulk- and interface-resolved XPD. At lower substrate temperatures, laminar growth is observed at all fluxes, but with different bulk nucleation behavior due to changes in the stoichiometry of the interface layer. This new observation of kinetic effects on the initial nucleation in CaF_2 epitaxy has important ramifications for the formation of thicker heterostructures for scientific or device applications. XPS and XPD are also used to identify for the first time, surface core-level species of Ca and F, and a secondary interface-shifted F Auger component arising from a second-layer site directly above interface-layer Ca atoms. The effects of lattice mismatch (from -3% to 8%) are investigated with various growths of Ca_{rm x}Sr _{rm 1-x}F_2 on Si and Ge (111) substrates. Triangulation of (111) and (220) XSW indicates a predominance of 3-fold hollow Sr bonding sites coexisting with 4-fold top sites for monolayers of SrF_2 on Si. XSW and LEED reveal a

The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

International Nuclear Information System (INIS)

Wang, Chenhui; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

2016-01-01

The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

2016-09-21

The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

Environmental risk assessment of engineered nano-SiO2 , nano iron oxides, nano-CeO2 , nano-Al2 O3 , and quantum dots.

Science.gov (United States)

Wang, Yan; Nowack, Bernd

2018-05-01

Many research studies have endeavored to investigate the ecotoxicological hazards of engineered nanomaterials (ENMs). However, little is known regarding the actual environmental risks of ENMs, combining both hazard and exposure data. The aim of the present study was to quantify the environmental risks for nano-Al 2 O 3 , nano-SiO 2 , nano iron oxides, nano-CeO 2 , and quantum dots by comparing the predicted environmental concentrations (PECs) with the predicted-no-effect concentrations (PNECs). The PEC values of these 5 ENMs in freshwaters in 2020 for northern Europe and southeastern Europe were taken from a published dynamic probabilistic material flow analysis model. The PNEC values were calculated using probabilistic species sensitivity distribution (SSD). The order of the PNEC values was quantum dots nano-CeO 2  nano iron oxides nano-Al 2 O 3  nano-SiO 2 . The risks posed by these 5 ENMs were demonstrated to be in the reverse order: nano-Al 2 O 3  > nano-SiO 2  > nano iron oxides > nano-CeO 2  > quantum dots. However, all risk characterization values are 4 to 8 orders of magnitude lower than 1, and no risk was therefore predicted for any of the investigated ENMs at the estimated release level in 2020. Compared to static models, the dynamic material flow model allowed us to use PEC values based on a more complex parameterization, considering a dynamic input over time and time-dependent release of ENMs. The probabilistic SSD approach makes it possible to include all available data to estimate hazards of ENMs by considering the whole range of variability between studies and material types. The risk-assessment approach is therefore able to handle the uncertainty and variability associated with the collected data. The results of the present study provide a scientific foundation for risk-based regulatory decisions of the investigated ENMs. Environ Toxicol Chem 2018;37:1387-1395. © 2018 SETAC. © 2018 SETAC.

Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Science.gov (United States)

Wang, Xue; Hartmann, Jana; Mandl, Martin; Sadat Mohajerani, Matin; Wehmann, Hergo-H.; Strassburg, Martin; Waag, Andreas

2014-04-01

Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiOx/sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns Jtop and on their sidewall Jsw, as well as, the diffusion flux from the substrate Jsub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by Jtop, Jsw and Jsub are estimated quantitatively. The diffusion length of species on the SiOx mask surface λsub as well as on the sidewall surfaces of the 3D columns λsw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing.

Linear arrangement of nano-scale magnetic particles formed in Cu-Fe-Ni alloys

Energy Technology Data Exchange (ETDEWEB)

Kang, Sung, E-mail: k3201s@hotmail.co [Department of Materials Engineering (SEISAN), Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama, 240-8501 (Japan); Takeda, Mahoto [Department of Materials Engineering (SEISAN), Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama, 240-8501 (Japan); Takeguchi, Masaki [Advanced Electron Microscopy Group, National Institute for Materials Science (NIMS), Sakura 3-13, Tsukuba, 305-0047 (Japan); Bae, Dong-Sik [School of Nano and Advanced Materials Engineering, Changwon National University, Gyeongnam, 641-773 (Korea, Republic of)

2010-04-30

The structural evolution of nano-scale magnetic particles formed in Cu-Fe-Ni alloys on isothermal annealing at 878 K has been investigated by means of transmission electron microscopy (TEM), electron dispersive X-ray spectroscopy (EDS), electron energy-loss spectroscopy (EELS) and field-emission scanning electron microscopy (FE-SEM). Phase decomposition of Cu-Fe-Ni occurred after an as-quenched specimen received a short anneal, and nano-scale magnetic particles were formed randomly in the Cu-rich matrix. A striking feature that two or more nano-scale particles with a cubic shape were aligned linearly along <1,0,0> directions was observed, and the trend was more pronounced at later stages of the precipitation. Large numbers of <1,0,0> linear chains of precipitates extended in three dimensions in late stages of annealing.

Chemical Functionalization, Self-Assembly, and Applications of Nano materials and Nano composites 2014

International Nuclear Information System (INIS)

Yan, X.; Jiao, T.; Balan, L.; Chen, X.; Hu, M.Z.; Liu, W.

2014-01-01

The growing interests in nano materials and nano composites call for the development of processing techniques to obtain multiple functionalization nano structures and achieve the tailoring of specific features of the nanometer size. Functional nano materials and nano composites will expand the applied range of the original material and at the same time promote the development of inter discipline. Thus, the chemical functionalization and bottom-up assemblies of nano materials and subsequent applications will accelerate the development of nano science and nano technology.

Influence of colloidal nano-silica on alkyd autoxidation

DEFF Research Database (Denmark)

Nikolic, Miroslav; Sanadi, Anand Ramesh; Löf, David

2017-01-01

Nanoparticles are often added to coatings in order to improve their mechanical properties. However, nanoparticles can also influence the cross-linking reaction of polymers and overall curing kinetics, and from this follows that properties of interest are further impacted. In research studies...... on alkyd-based coatings, only the physical drying stage during the first 24 h has been studied in this respect until now. In this study, it was shown with the use of Raman spectroscopy that colloidal nano-silica can change the rate of alkyd autoxidation and how this effect is reflected on the tensile...... properties of the coating. One of the consequences of the influence of nano-silica on curing kinetics is that, contrary to implicit assumptions of common testing methods, the real effect of nanoparticles on mechanical properties can emerge much later in the coating lifetime....

Characterization of GaN/AlGaN epitaxial layers grown

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

Energy Technology Data Exchange (ETDEWEB)

Götsch, Thomas; Mayr, Lukas [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Stöger-Pollach, Michael [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, A-1040 Vienna (Austria); Klötzer, Bernhard [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Penner, Simon, E-mail: simon.penner@uibk.ac.at [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria)

2015-03-15

Highlights: • Preparation of unsupported yttrium-stabilized zirconia films. • Control of ordering and epitaxy by temperature of deposition template. • Adjustment of film defectivity by deposition and post-oxidation temperature. • Reproducibility of target stoichiometry in the deposited films. • Lateral and vertical chemical homogeneity. - Abstract: Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films (“YSZ”, 8 mol% Y{sub 2}O{sub 3}) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

Nano-Electrochemistry and Nano-Electrografting with an Original Combined AFM-SECM

Directory of Open Access Journals (Sweden)

Ammar Ben Brahim

2013-05-01

Full Text Available This study demonstrates the advantages of the combination between atomic force microscopy and scanning electrochemical microscopy. The combined technique can perform nano-electrochemical measurements onto agarose surface and nano-electrografting of non-conducting polymers onto conducting surfaces. This work was achieved by manufacturing an original Atomic Force Microscopy-Scanning ElectroChemical Microscopy (AFM-SECM electrode. The capabilities of the AFM-SECM-electrode were tested with the nano-electrografting of vinylic monomers initiated by aryl diazonium salts. Nano-electrochemical and technical processes were thoroughly described, so as to allow experiments reproducing. A plausible explanation of chemical and electrochemical mechanisms, leading to the nano-grafting process, was reported. This combined technique represents the first step towards improved nano-processes for the nano-electrografting.

Nano-Electrochemistry and Nano-Electrografting with an Original Combined AFM-SECM

Science.gov (United States)

Ghorbal, Achraf; Grisotto, Federico; Charlier, Julienne; Palacin, Serge; Goyer, Cédric; Demaille, Christophe; Ben Brahim, Ammar

2013-01-01

This study demonstrates the advantages of the combination between atomic force microscopy and scanning electrochemical microscopy. The combined technique can perform nano-electrochemical measurements onto agarose surface and nano-electrografting of non-conducting polymers onto conducting surfaces. This work was achieved by manufacturing an original Atomic Force Microscopy-Scanning ElectroChemical Microscopy (AFM-SECM) electrode. The capabilities of the AFM-SECM-electrode were tested with the nano-electrografting of vinylic monomers initiated by aryl diazonium salts. Nano-electrochemical and technical processes were thoroughly described, so as to allow experiments reproducing. A plausible explanation of chemical and electrochemical mechanisms, leading to the nano-grafting process, was reported. This combined technique represents the first step towards improved nano-processes for the nano-electrografting. PMID:28348337

Anisotropic-strain-relaxation-induced crosshatch morphology in epitaxial SrTiO{sub 3}/NdGaO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Tan, X. L.; Chen, F.; Chen, P. F.; Xu, H. R.; Chen, B. B.; Jin, F.; Gao, G. Y.; Wu, W. B., E-mail: wuwb@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, and High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230026 (China)

2014-10-15

We investigate the strain relaxation and surface morphology of epitaxial SrTiO{sub 3} (STO) films grown on (001){sub O} and (110){sub O} planes of orthorhombic NdGaO{sub 3} (NGO), and (001) plane of cubic (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates. Although the average lattice mismatches are similar, strikingly regular crosshatched surface patterns can be found on STO/NGO(001){sub O}[(110){sub O}] films, contrary to the uniform surface of STO/LSAT(001). Based on the orientation and thickness dependent patterns and high-resolution x-ray diffractions, we ascribe the crosshatch morphology to the anisotropic strain relaxation with possibly the 60° misfit dislocation formation and lateral surface step flow in STO/NGO films, while an isotropic strain relaxation in STO/LSAT. Further, we show that the crosshatched STO/NGO(110){sub O} surface could be utilized as a template to modify the magnetotransport properties of epitaxial La{sub 0.6}Ca{sub 0.4}MnO{sub 3} films. This study highlights the crucial role of symmetry mismatch in determining the surface morphology of the perovskite oxide films, in addition to their epitaxial strain states, and offers a different route for designing and fabricating functional perovskite-oxide devices.

Quantum wire spectroscopy and epitaxial growth velocities in InGaAs-InP heterostructures

International Nuclear Information System (INIS)

Worlock, J.M.; Peeters, F.M.; Cox, H.M.; Morais, P.C.

1990-06-01

We study excitons bound to quantum wires of InGaAs embedded in an InP matrix, where the wires vary from 2.93A angstrom to a.1172A angstrom (one to four monolayers) thick and from 25A angstrom to 250A angstrom wide. We combine spectroscopic data from measurements of photoluminescence with variational calculations of the binding energies of excitons to the wires to deduce the wire widths and thickness. The widths are then related to the growth times to deduce lateral growth velocities in the vapor levitation epitaxial technique. Monolayer growth rates, at ∼ 80A angstrom/sec, are significantly faster than growth rates for the multilayer wires. (author)

Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

CSIR Research Space (South Africa)

Venkatasamy, V

2006-04-01

Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.; Buckley, M. R.; Gerbode, S. J.; Cohen, I.

2010-01-01

-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics

Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

Energy Technology Data Exchange (ETDEWEB)

Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

2015-02-01

Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

Growth of epitaxial thin films by pulsed laser ablation

International Nuclear Information System (INIS)

Lowndes, D.H.

1992-01-01

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Science.gov (United States)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

2018-04-01

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

International Nuclear Information System (INIS)

Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

1980-01-01

To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

The origin of local strain in highly epitaxial oxide thin films.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

2013-10-31

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO2 pattern sizes

International Nuclear Information System (INIS)

Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam

2013-01-01

Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO 2 pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO 2 mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO 2 pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

International Nuclear Information System (INIS)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah; Patriarche, Gilles; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Heer, Walt A. de; Berger, Claire

2016-01-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Energy Technology Data Exchange (ETDEWEB)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

2016-03-07

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs

Energy Technology Data Exchange (ETDEWEB)

Bakin, A.; El-Shaer, A.; Mofor, A.C.; Al-Suleiman, M.; Schlenker, E.; Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

2007-07-01

ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO-based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn{sub 1-x}Mg{sub x}O epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c-axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE-grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano-LEDs realization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The physics of epitaxial graphene on SiC(0001)

International Nuclear Information System (INIS)

Kageshima, H; Hibino, H; Tanabe, S

2012-01-01

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Skierbiszewski, C.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Perlin, P.; Wisniewski, P.; Borysiuk, J.; Grzegory, I.; Leszczynski, M.; Suski, T.; Porowski, S.

2005-01-01

We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm 2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

On the density of states of disordered epitaxial graphene

International Nuclear Information System (INIS)

Davydov, S. Yu.

2015-01-01

The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

Nano-bio-sensing

CERN Document Server

Carrara, Sandro

2011-01-01

This book examines state-of-the-art applications of nano-bio-sensing. It brings together researchers from nano-electronics and bio-technology, providing multidisciplinary content from nano-structures fabrication to bio-sensing applications.

Controllable factors affecting the epitaxial quality of LaCoO3 films ...

Indian Academy of Sciences (India)

2018-03-23

Mar 23, 2018 ... ... larger molecular weight contribute to the improvement of epitaxial quality of LaCoO3 epitaxial film. ..... Research Fund of Education Department of Sichuan Province. (grant nos. 16ZA0133 and 15ZB0108); and the Doctoral.

Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

Science.gov (United States)

Zheng, Maxwell S.

In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of >500 mum and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ˜12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ˜795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Design and analysis of compact ultra energy-efficient logic gates using laterally-actuated double-electrode NEMS

KAUST Repository

Dadgour, Hamed F.; Hussain, Muhammad Mustafa; Smith, Casey Eben; Banerjee, Kaustav

2010-01-01

Nano-Electro-Mechanical Switches (NEMS) are among the most promising emerging devices due to their near-zero subthreshold-leakage currents. This paper reports device fabrication and modeling, as well as novel logic gate design using "laterally

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

Environmental silicate nano-biocomposites

CERN Document Server

Pollet, Eric

2012-01-01

Environmental Silicate Nano-Biocomposites focuses on nano-biocomposites, which are obtained by the association of silicates such as bioclays with biopolymers. By highlighting recent developments and findings, green and biodegradable nano-composites from both renewable and biodegradable polymers are explored. This includes coverage of potential markets such as packaging, agricultures, leisure and the fast food industry. The knowledge and experience of more than twenty international experts in diverse fields, from chemical and biochemical engineering to applications, is brought together in four different sections covering: Biodegradable polymers and Silicates, Clay/Polyesters Nano-biocomposites, Clay/Agropolymers Nano-biocomposites, and Applications and biodegradation of Nano-biocomposites. By exploring the relationships between the biopolymer structures, the processes, and the final properties Environmental Silicate Nano-Biocomposites explains how to design nano-materials to develop new, valuable, environmenta...

Epitaxial stabilization of ordered Pd–Fe structures on perovskite substrates

Energy Technology Data Exchange (ETDEWEB)

Harton, Renee M., E-mail: reneehar@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States); Stoica, Vladimir A. [Department of Materials Science and Engineering, Pennsylvania State University, 201 Old Main, University Park, PA 16802 (United States); Clarke, Roy [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States)

2017-05-01

We report the fabrication of epitaxial ferromagnetic Pd{sub 3}Fe thin films on SrTiO{sub 3}(001) substrates by promoting the interdiffusion of an Fe/Pd multilayer heterostructure using thermal annealing. Prior to annealing, the results of in-situ Reflection High-Energy Electron Diffraction characterization suggest that each Fe and Pd layer exhibited an in-plane epitaxial relationship with the SrTiO{sub 3}(001) substrate. X-Ray diffraction and magneto-optic Kerr effect characterization, conducted post-annealing, demonstrate that the film composition is majority Pd{sub 3}Fe and exhibits in-plane magnetization reversal with a moderate coercive field of ≈760 Oe. This demonstration of an ordered atomic layer heterostructure grown on a perovskite substrate suggests a route to epitaxial interfacial structures which can achieve strain-assisted magnetic switching.

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

International Nuclear Information System (INIS)

Shin, Byungha; Aziz, Michael J.

2007-01-01

We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown

Crystalline and electronic structure of epitaxial γ-Al2O3 films

International Nuclear Information System (INIS)

Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

2013-01-01

Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

Development of Nb nanoSQUIDs based on SNS junctions for operation in high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Morosh, Viacheslav; Kieler, Oliver; Weimann, Thomas; Zorin, Alexander [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Mueller, Benedikt; Martinez-Perez, Maria Jose; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany)

2016-07-01

Investigation of the magnetization reversal of single magnetic nanoparticles requires SQUIDs with high spatial resolution, high spin sensitivity (a few Bohr magneton μ{sub B}) and at the same time sufficient stability in high magnetic fields. We fabricated dc nanoSQUIDs comprising overdamped SNS sandwich-type (Nb/HfTi/Nb) Josephson junctions using optimized technology based on combination of electron beam lithography and chemical-mechanical polishing. Our nanoSQUIDs have Josephson junctions with lateral dimensions ≤ 150 nm x 150 nm, effective loop areas < 0.05 μm{sup 2} and the distance between the Josephson junctions ≤ 100 nm. The feeding strip lines of the width ≤ 200 nm have been realized. The nanoSQUIDs have shown stable operation in external magnetic fields at least up to 250 mT. Sufficiently low level of flux noise resulting in spin sensitivity of few tens μ{sub B}/Hz{sup 1/2} has been demonstrated. A further reduction of the nanoSQUID size using our technology is possible.

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

UHV-STM manipulation of single flat gold nano-islands for constructing interconnection nanopads on MoS2

International Nuclear Information System (INIS)

Yang, JianShu; Jie, Deng; Chandrasekhar, N; Joachim, C

2007-01-01

We demonstrate manipulation of metallic islands containing nearly a million atoms with a precision of one lattice spacing on a MoS 2 surface, one at a time. Optimizing the growth conditions yields triangular shape metallic nano-islands 40 nm in lateral size and 12 nm in height on the MoS2 surface. The manipulation of these nano-islands is done one at a time using the scanning tunneling microscope, and a fully planar 4 pad nanostructure is demonstrated, where one apex of each triangular nano-island is pointing towards a central working MoS 2 area of 12 nm x 24 nm in which atomic cleanliness is preserved. The feedback loop conditions to achieve this manipulation are discussed. This fully planar 4 pads nano-structure is ready to be interconnected by a multi-tip system

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Epitaxial ternary nitride thin films prepared by a chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Mass production of polymer nano-wires filled with metal nano-particles.

Science.gov (United States)

Lomadze, Nino; Kopyshev, Alexey; Bargheer, Matias; Wollgarten, Markus; Santer, Svetlana

2017-08-17

Despite the ongoing progress in nanotechnology and its applications, the development of strategies for connecting nano-scale systems to micro- or macroscale elements is hampered by the lack of structural components that have both, nano- and macroscale dimensions. The production of nano-scale wires with macroscale length is one of the most interesting challenges here. There are a lot of strategies to fabricate long nanoscopic stripes made of metals, polymers or ceramics but none is suitable for mass production of ordered and dense arrangements of wires at large numbers. In this paper, we report on a technique for producing arrays of ordered, flexible and free-standing polymer nano-wires filled with different types of nano-particles. The process utilizes the strong response of photosensitive polymer brushes to irradiation with UV-interference patterns, resulting in a substantial mass redistribution of the polymer material along with local rupturing of polymer chains. The chains can wind up in wires of nano-scale thickness and a length of up to several centimeters. When dispersing nano-particles within the film, the final arrangement is similar to a core-shell geometry with mainly nano-particles found in the core region and the polymer forming a dielectric jacket.

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Plasmonic graded nano-disks as nano-optical conveyor belt.

Science.gov (United States)

Kang, Zhiwen; Lu, Haifei; Chen, Jiajie; Chen, Kun; Xu, Fang; Ho, Ho-Pui

2014-08-11

We propose a plasmonic system consisting of nano-disks (NDs) with graded diameters for the realization of nano-optical conveyor belt. The system contains a couple of NDs with individual elements coded with different resonant wavelengths. By sequentially switching the wavelength and polarization of the excitation source, optically trapped target nano-particle can be transferred from one ND to another. The feasibility of such function is verified based on the three-dimensional finite-difference time-domain technique and the Maxwell stress tensor method. Our design may provide an alternative way to construct nano-optical conveyor belt with which target molecules can be delivered between trapping sites, thus enabling many on-chip optofluidic applications.

The Effect of Nano Loading and Ultrasonic Compounding of EVA/LDPE/Nano-magnesium Hydroxide on Mechanical Properties and Distribution of Nano Particles

Science.gov (United States)

Azman, I. A.; Salleh, R. M.; Alauddin, S. M.; Shueb, M. I.

2018-05-01

Blends of Ethylene Vinyl Acetate (EVA) and Low-Density Polyethylene (LDPE) are promising composite which have good mechanical properties to environmental stress cracking. However, they lack fire resistant properties, which limits it usage in wire and cable industry. In order to improve flame retardancy ability, a range of nano-magnesium hydroxide (nano-MH) loading which is from 0 phr to maximum of 20 phr with ultrasonic extrusion 0-100 kHz frequencies have been introduced. Ultrasonic extrusion was used to improve the distribution of nano-MH. It was found that, 10 phr of nano loading with 100 kHz ultrasonic assisted has greater tensile strength compared to the nanocomposite without ultrasonication. Further increase of nano MH loading, will decrease the tensile properties. Better elongation at break was observed at10 phr nano-MH with the frequency of 50 kHz. The sample of 20 phr of nanoMH assisted with 50 kHz ultrasonic exhibits good flexural properties while 10 phr of nano-MH without the ultrasonic assisted demonstrates good in izod impact properties. From the evaluation of mechanical properties studied, it was found that 10 phr of nano-MH has shown the best performance among all the samples tested for EVA/LDPE/nano-MH composites. Transmission Electron Microscopy (TEM) has been conducted on 10 phr sample with different frequencies in order to observe the distribution of nano-MH particles. The sample with 100 kHz frequency shows more uniform dispersion of nano-MH in EVA/LDPE composites. This investigation indicates that the ultrasonic technology can enhance the mechanical properties studied as well as the dispersion of nano particles in the composite.

Electronic properties of epitaxial 6H silicon carbide

International Nuclear Information System (INIS)

Wessels, B.W.; Gatos, H.C.

1977-01-01

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

International Nuclear Information System (INIS)

Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

2014-01-01

We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

Complex Nanostructures by Pulsed Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Noboyuki Koguchi

2011-06-01

Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

Cancer Nano medicine

International Nuclear Information System (INIS)

Li, H.; Pike, M.M.; Luo, X.; Liu, L.H.

2013-01-01

Bioengineered nano materials have inspired revolutionary imaging and drug delivery methods whose clinical application in cancer research has resulted in powerful medical devices for early diagnosis, treatment, and prevention of cancer. Recent advances in super imaging agents have resulted in improved resolution and sensitivity. For instance, fluorescent quantum dots with wavelength-tunable emissions, plasmon-resonant gold nano structures with shape-controlled near-infrared absorptions, and MRI-active iron oxide nanoparticles are well-established molecular imaging probes for noninvasive cancer imaging. Nano materials are also considered to be the most effective vectors that can break through transport bio barriers and deliver a constant dose of multiple therapeutic agents to tumors and intracellular endocytic compartments for cancer gene therapy, immunotherapy, or chemotherapy. Furthermore, nano wire- or nano tube-based electronic devices demonstrate extraordinary sensitivity capable of detection at the single molecule or protein level. It is anticipated that developing nano technology-driven imaging, sensing, and therapeutic systems will dramatically advance cancer research and clinical treatments.

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Science.gov (United States)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Are nano-composites and nano-ionomers suitable for orthodontic bracket bonding?

Science.gov (United States)

Uysal, Tancan; Yagci, Ahmet; Uysal, Banu; Akdogan, Gülsen

2010-02-01

The aim of this study was to test nano-composite (Filtek Supreme Plus Universal) and a newly introduced nano-ionomer (Ketac N100 Light Curing Nano-Ionomer) restorative to determine their shear bond strength (SBS) and failure site locations in comparison with a conventional light-cure orthodontic bonding adhesive (Transbond XT). Sixty freshly extracted human maxillary premolar teeth were arbitrarily divided into three equal groups. The brackets were bonded to the teeth in each group with different composites, according to the manufacturers' instructions. The SBS values of the brackets were recorded in Megapascals (MPa) using a universal testing machine. Adhesive remnant index scores were determined after failure of the brackets. The data were analysed using analysis of variance, Tukey honestly significant difference, and chi-square tests. The results demonstrated that group 1 (Transbond XT, mean: 12.60 +/- 4.48 MPa) had a higher SBS than that of group 2 (nano-composite, mean: 8.33 +/- 5.16 MPa; P nano-ionomer, mean: 6.14 +/- 2.12 MPa; P Nano-composites and nano-ionomers may be suitable for bonding since they fulfil the previously suggested SBS ranges for clinical acceptability, but they are inferior to a conventional orthodontic composite.

Preparation, Characterization, and Modeling of Carbon Nano fiber/Epoxy Nano composites

International Nuclear Information System (INIS)

Sun, L.H.; Yang, Z.G.; Ounaies, Z.; Whalen, C.A.; Gao, X.L.

2011-01-01

There is a lack of systematic investigations on both mechanical and electrical properties of carbon nano fiber (CNF)-reinforced epoxy matrix nano composites. In this paper, an in-depth study of both static and dynamic mechanical behaviors and electrical properties of CNF/epoxy nano composites with various contents of CNFs is provided. A modified Halpin-Tsai equation is used to evaluate the Young's modulus and storage modulus of the nano composites. The values of Young's modulus predicted using this method account for the effect of the CNF agglomeration and fit well with those obtained experimentally. The results show that the highest tensile strength is found in the epoxy nano composite with a 1.0 wt % CNFs. The alternate-current (AC) electrical properties of the CNF/epoxy nano composites exhibit a typical insulator-conductor transition. The conductivity increases by four orders of magnitude with the addition of 0.1 wt % (0.058 vol %) CNFs and by ten orders of magnitude for nano composites with CNF volume fractions higher than 1.0 wt % (0.578 vol %). The percolation threshold (i.e., the critical CNF volume fraction) is found to be at 0.057 vol %.

Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

International Nuclear Information System (INIS)

Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

2003-01-01

An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

NanoAODs

CERN Document Server

Husova, Lucia Anna

2017-01-01

The scientist on LHC experiment analyse a huge amount of data every day on the Grid. Thus new methods are requested, how to make the analysis more efficient. The NanoAOD is a derived dataset from AOD, where only information necessary for the analysis is stored. Thus the analysis can be more than two times faster, because of the smaller file size, which can be read faster on the Grid. The main goal of this summer student project was to help other users to start using NanoAODs by rewriting their user tasks. Two example users tasks were converted to NanoAODs and tested with the local train test. A speed up of 3.5 was reached. The results of the analysis tasks are identical independent if they use AODs or NanoAODs.

STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, Lars; Hallam, Toby; Curson, Neil J.; Simmons, Michelle Y.; Clark, Robert G

2003-05-15

We investigate the morphology of epitaxial Si layers grown on clean and on hydrogen terminated Si(0 0 1) to explore the growth strategy for the fabrication of a Si-based quantum computer. We use molecular beam epitaxy to deposit 5 monolayers of silicon at a temperature of 250 deg. C and scanning tunnelling microscopy to image the surface at room temperature after growth and after various rapid annealing steps in the temperature range of 350-600 deg. C. The epitaxial layer grown on the hydrogenated surface shows a significantly higher surface roughness due to a lower mobility of silicon surface atoms in the presence of hydrogen. Annealing at temperatures {>=}550 deg. C reduces the roughness of both epitaxial layers to the value of a clean silicon surface. However, the missing dimer defect density of the epitaxial layer grown on the hydrogenated surface remains higher by a factor of two compared to the layer grown on clean Si(0 0 1). Our results suggest a quantum computer growth strategy in which the hydrogen resist layer is desorbed before the epitaxial silicon layer is grown at low temperature to encapsulate phosphorus quantum bits.

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

International Nuclear Information System (INIS)

Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

2011-01-01

GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

Synthesis and structural characterization of coaxial nano tubes intercalated of molybdenum disulfide with carbon; Sintesis y caracterizacion estructural de nanotubos coaxiales intercalados de disulfuro de molibdeno con carbono

Energy Technology Data Exchange (ETDEWEB)

Reza San German, C M

2005-07-01

In this work the study of some fundamental aspects in the growth of unidimensional systems of coaxial nano tubes from the mold method is approached. This method is an inclusion technique of a precursor reagent into oxide nano porous alumina film (mold), and later applying some processes of synthesis it is gotten to obtain the wished material. The synthesized structures are identified later because they take place by means of the initial formation of nano tubes of MoS{sub 2}, enclosing to carbon nano tubes by the same method, with propylene flow which generates a graphitization process that 'copy' the mold through as it flows. Binary phase MoS{sub 2} + C nano tubes were synthesized by propylene pyrolysis inside MoS{sub 2} nano tubes prepared by template assisted technique. The large coaxial nano tubes constituted of graphite sheets inserted between the MoS{sub 2} layers forming the outer part, and coaxial multi wall carbon nano tubes (MWCNT) intercalated with MoS{sub 2} inside. High resolution electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), high angle annular dark field (HAADF), gatan image filter (GIF), nano beam electron diffraction patterns (NBEDP), along with molecular dynamics simulation and quantum mechanical calculations were used to characterize the samples. The one-dimensional structures exhibit diverse morphologies such as long straight and twisted nano tubes with several structural irregularities. The inter-planar spacing between MoS{sub 2} layers was found to increase from 6.3 to 7.4 A due to intercalation with carbon. Simulated HREM images revealed the presence of these twisted nano structures, with mechanical stretch into intercalate carbon between MoS{sub 2} layers. Our results open up the possibility of using MoS{sub 2} nano tubes as templates for the synthesis of new one- dimensional binary phase systems. (Author)

Synthesis and structural characterization of coaxial nano tubes intercalated of molybdenum disulfide with carbon; Sintesis y caracterizacion estructural de nanotubos coaxiales intercalados de disulfuro de molibdeno con carbono

Energy Technology Data Exchange (ETDEWEB)

Reza San German, C.M

2005-07-01

In this work the study of some fundamental aspects in the growth of unidimensional systems of coaxial nano tubes from the mold method is approached. This method is an inclusion technique of a precursor reagent into oxide nano porous alumina film (mold), and later applying some processes of synthesis it is gotten to obtain the wished material. The synthesized structures are identified later because they take place by means of the initial formation of nano tubes of MoS{sub 2}, enclosing to carbon nano tubes by the same method, with propylene flow which generates a graphitization process that 'copy' the mold through as it flows. Binary phase MoS{sub 2} + C nano tubes were synthesized by propylene pyrolysis inside MoS{sub 2} nano tubes prepared by template assisted technique. The large coaxial nano tubes constituted of graphite sheets inserted between the MoS{sub 2} layers forming the outer part, and coaxial multi wall carbon nano tubes (MWCNT) intercalated with MoS{sub 2} inside. High resolution electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), high angle annular dark field (HAADF), gatan image filter (GIF), nano beam electron diffraction patterns (NBEDP), along with molecular dynamics simulation and quantum mechanical calculations were used to characterize the samples. The one-dimensional structures exhibit diverse morphologies such as long straight and twisted nano tubes with several structural irregularities. The inter-planar spacing between MoS{sub 2} layers was found to increase from 6.3 to 7.4 A due to intercalation with carbon. Simulated HREM images revealed the presence of these twisted nano structures, with mechanical stretch into intercalate carbon between MoS{sub 2} layers. Our results open up the possibility of using MoS{sub 2} nano tubes as templates for the synthesis of new one- dimensional binary phase systems. (Author)

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode

Science.gov (United States)

Martin, R. D.; Forouhar, S.; Keo, S.; Lang, R. J.; Hunsperger, R. G.; Tiberio, R. C.; Chapman, P. F.

1995-01-01

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

KAUST Repository

Duan, X. F.

2013-01-08

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

International Nuclear Information System (INIS)

Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

2012-01-01

Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

Combinatorial Nano-Bio Interfaces.

Science.gov (United States)

Cai, Pingqiang; Zhang, Xiaoqian; Wang, Ming; Wu, Yun-Long; Chen, Xiaodong

2018-06-08

Nano-bio interfaces are emerging from the convergence of engineered nanomaterials and biological entities. Despite rapid growth, clinical translation of biomedical nanomaterials is heavily compromised by the lack of comprehensive understanding of biophysicochemical interactions at nano-bio interfaces. In the past decade, a few investigations have adopted a combinatorial approach toward decoding nano-bio interfaces. Combinatorial nano-bio interfaces comprise the design of nanocombinatorial libraries and high-throughput bioevaluation. In this Perspective, we address challenges in combinatorial nano-bio interfaces and call for multiparametric nanocombinatorics (composition, morphology, mechanics, surface chemistry), multiscale bioevaluation (biomolecules, organelles, cells, tissues/organs), and the recruitment of computational modeling and artificial intelligence. Leveraging combinatorial nano-bio interfaces will shed light on precision nanomedicine and its potential applications.

Nano-scale Materials and Nano-technology Processes in Environmental Protection

International Nuclear Information System (INIS)

Vissokov, Gh; Tzvetkoff, T.

2003-01-01

A number of environmental and energy technologies have benefited substantially from nano-scale technology: reduced waste and improved energy efficiency; environmentally friendly composite structures; waste remediation; energy conversion. In this report examples of current achievements and paradigm shifts are presented: from discovery to application; a nano structured materials; nanoparticles in the environment (plasma chemical preparation); nano-porous polymers and their applications in water purification; photo catalytic fluid purification; hierarchical self-assembled nano-structures for adsorption of heavy metals, etc. Several themes should be considered priorities in developing nano-scale processes related to environmental management: 1. To develop understanding and control of relevant processes, including protein precipitation and crystallisation, desorption of pollutants, stability of colloidal dispersion, micelle aggregation, microbe mobility, formation and mobility of nanoparticles, and tissue-nanoparticle interaction. Emphasis should be given to processes at phase boundaries (solid-liquid, solid-gas, liquid-gas) that involve mineral and organic soil components, aerosols, biomolecules (cells, microbes), bio tissues, derived components such as bio films and membranes, and anthropogenic additions (e.g. trace and heavy metals); 2. To carry out interdisciplinary research that initiates Noel approaches and adopts new methods for characterising surfaces and modelling complex systems to problems at interfaces and other nano-structures in the natural environment, including those involving biological or living systems. New technological advances such as optical traps, laser tweezers, and synchrotrons are extending examination of molecular and nano-scale processes to the single-molecule or single-cell level; 3. To integrate understanding of the roles of molecular and nano-scale phenomena and behaviour at the meso- and/or macro-scale over a period of time

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Control growth of silicon nanocolumns' epitaxy on silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

2013-04-15

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

ON NANO Λg-CLOSED SETS

OpenAIRE

Rajasekaran, Ilangovan; Nethaji, Ochanan

2017-01-01

Abstaract−In this paper, we introduce nano ∧g-closed sets in nano topological spaces. Some properties of nano ∧g-closed sets and nano ∧g-open sets are weaker forms of nano closed sets and nano open sets

Transferring metallic nano-island on hydrogen passivated silicon surface for nano-electronics

International Nuclear Information System (INIS)

Deng, J; Troadec, C; Joachim, C

2009-01-01

In a planar configuration, precise positioning of ultra-flat metallic nano-islands on semiconductor surface opens a way to construct nanostructures for atomic scale interconnects. Regular triangular Au nano-islands have been grown on atomically flat MoS 2 substrates and manipulated by STM to form nanometer gap metal-pads connector for single molecule electronics study. The direct assembly of regular shaped metal nano-islands on H-Si(100) is not achievable. Here we present how to transfer Au triangle nano-islands from MoS 2 onto H-Si(100) in a clean manner. In this experiment, clean MoS 2 substrates are patterned as array of MoS 2 pillars with height of 8 μm. The Au triangle nano-islands are grown on top of the pillars. Successful printing transfer of these Au nano-islands from the MoS 2 pillars to the H-Si(100) is demonstrated.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

Science.gov (United States)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Editorial Emerging Multifunctional Nano structures

International Nuclear Information System (INIS)

Fan, H.; Lu, Y.; Ramanath, G.; Pomposo, J.A.

2009-01-01

The interest in emerging nano structures is growing exponentially since they are promising building blocks for advanced multifunctional nano composites. In recent years, an evolution from the controlled synthesis of individual monodisperse nanoparticles to the tailored preparation of hybrid spherical and also unsymmetrical multiparticle nano structures is clearly observed. As a matter of fact, the field of nano structures built around a nano species such as inside, outside, and next to a nanoparticle is becoming a new evolving area of research and development with potential applications in improved drug delivery systems, innovative magnetic devices, biosensors, and highly efficient catalysts, among several others Emerging nano structures with improved magnetic, conducting and smart characteristics are currently based on the design, synthesis, characterization and modeling of multifunctional nano object-based materials. In fact, core-shell nanoparticles and other related complex nano architectures covering a broad spectrum of materials (from metal and metal oxide to fused carbon, synthetic polymer, and bio polymer structures) to nano structure morphologies (spherical, cylindrical, star-like, etc.) are becoming the main building blocks for next generation of drug delivery systems, advanced sensors and biosensors, or improved nano composites. The five papers presented in this special issue examine the preparation and characterization of emerging multifunctional materials, covering from hybrid asymmetric structures to engineering nano composites.

Synthesis and characterization of nano hydroxyapatite using reverse micro emulsions as nano reactors

International Nuclear Information System (INIS)

Amin, S.; Siddique, T.

2015-01-01

In the present work reverse micro emulsion has been employed as nano reactors to synthesize nano crystalline Hydroxyapatite (HA). Two precursors; calcium and phosphate with different counter ions of each were used for the synthesis of HA at two different temperatures. To maintain the emulsified nano reactor, cyclohexane, TX-100 and 1-butanol including phosphate precursor was the continuous phase while aqueous Ca precursor solution was taken as the dispersed phase. Nano crystalline particles thus produced were evaluated on the basis of synthesis route, counter ions and temperature. It has been shown that emulsified nano reactors control the morphology, particle size and minimize phase transformation of HA. Characterizations of nano powder of HA are carried out using x-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), and scanning electron microscopy (SEM). HA crystallite size was found to be in the range of 20-25 nm whereas the morphology of nano particles changed from spheres to rods. (author)

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Laser molecular beam epitaxy of ZnO thin films and heterostructures

International Nuclear Information System (INIS)

Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

2014-01-01

We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

Nano devices and sensors

CERN Document Server

Liaw, Shien-Kuei; Chung, Yung-Hui

2016-01-01

This volume on semiconductor devices focuses on such topics as nano-imprinting, lithography, nanowire charge-trapping, thermo-stability in nanowires, nano-electrodes, and voltage and materials used for fabricating and improving electrical characteristics of nano-materials.

Application of emission CT on nano-robot radiation imaging tracing and isotope sign in nano-robot

International Nuclear Information System (INIS)

Wang Xuewu; Cheng Jianping; Kang Kejun

2000-01-01

Nano-technology has been a scientific and technical frontier with major trends foreseen in several disciplines. Nano-robot is the most remarkable imagination of the application of nano-technology. And it should be concerned of tracing technology along with nano-robot. The character of nano-robot is deeply analyzed, the development status of emission CT is integrated, and the application of emission CT on nano-robot radiation imaging tracing is discussed. The isotope sign of nano-robot is especially calculated and analyzed

Fabrication of high-aspect-ratio nano structures using a nano x-ray shadow mask

International Nuclear Information System (INIS)

Kim, Yong Chul; Lee, Seung S

2008-01-01

This paper describes a novel method for the fabrication of high-aspect-ratio nano structures (HAR-nano structures) using a nano x-ray shadow mask and deep x-ray lithography (DXRL). The nano x-ray shadow mask is fabricated by depositing an x-ray absorber layer (Au, 3 µm) onto the back side of a nano shadow mask. The nano shadow mask is produced with nano-sized apertures whose dimensions are reduced to several tens of nanometers by the accumulation of low-stress silicon nitride (Si x N y ) using the LPCVD process on the shadow mask. A shadow mask containing apertures with a size of 1 µm is fabricated on a bulk micromachined Si x N y membrane. The thickness of an absorber layer must be in the range of several tens of micrometers in order to obtain a contrast of more than 100 for the conventional DXRL process at the Pohang Light Source (PLS). However, a 3 µm thick absorber layer can provide a sufficient contrast if the modified DXRL of the central beam-stop method is used, which blocks high-energy x-rays. A nano shadow mask with 30 nm sized apertures is fabricated and a nano x-ray shadow mask with 250 nm sized apertures is fabricated by depositing a 3 µm thick absorber layer on a nano shadow mask with 500 nm sized apertures. HAR-nano structures (circles with a diameter of 420 nm and lines with a width of 274 nm) with aspect ratios of over 10:1 on a 3.2 µm SU-8 are successfully fabricated by using the nano x-ray shadow mask and the central beam-stop method

Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

International Nuclear Information System (INIS)

Schlom, D.G.; Merritt, B.A.; Madhavan, S.

1997-01-01

The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

Layered growth model and epitaxial growth structures for SiCAlN alloys

International Nuclear Information System (INIS)

Liu Zhaoqing; Ni Jun; Su Xiaoao; Dai Zhenhong

2009-01-01

Epitaxial growth structures for (SiC) 1-x (AlN) x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=1/6 ,1/5 ,1/4 ,1/3 , and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAlN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC) 1-x (AlN) x alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Effect of gold nano-particle layers on ablative acceleration of plastic foil targets

Czech Academy of Sciences Publication Activity Database

Dhareshwar, L.J.; Gupta, N.K.; Chaurasia, S.; Ayyub, P.; Kulkarni, N.; Badziak, J.; Pisarczyk, T.; Kasperczuk, A.; Parys, P.; Rosinski, M.; Wolowski, J.; Krouský, Eduard; Krása, Josef; Mašek, Karel; Pfeifer, Miroslav; Skála, Jiří; Ullschmied, Jiří; Velyhan, Andriy; Margarone, Daniele; Mezzasalma, A.; Pisarczyk, P.

2010-01-01

Roč. 244, č. 2 (2010), 022018/1-022018/8 ISSN 1742-6588 R&D Projects: GA MŠk(CZ) LC528; GA MŠk(CZ) 7E08094 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser pulse absorption * nano-particle coating * lateral thermal conduction Subject RIV: BL - Plasma and Gas Discharge Physics

Seed layer technique for high quality epitaxial manganite films

Directory of Open Access Journals (Sweden)

P. Graziosi

2016-08-01

Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

Hard gap in epitaxial semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Chang, W.; Albrecht, S. M.; Jespersen, T. S.

2015-01-01

a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

CBE growth of high-quality ZnO epitaxial layers

Energy Technology Data Exchange (ETDEWEB)

El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

2006-03-15

Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The influence of Fe doping on the surface topography of GaN epitaxial material

International Nuclear Information System (INIS)

Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

2015-01-01

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

Nano-dot and nano-pit fabrication on a GaAs substrate by a pulse applied AFM

International Nuclear Information System (INIS)

Kim, H C; Yu, J S; Ryu, S H

2012-01-01

The nano-patterning characteristics of GaAs is investigated using a pulse applied atomic force microscope (AFM). Very short range voltage pulses of micro to nano-seconds’ duration are applied to a conductive diamond-coated silicon (Si) tip in contact mode, to regulate the created feature size. The effects of pulse conditions such as pulse voltage, duration, frequency, offset voltage, anodization time, and applied tip pressure on nano-dot generation are characterized, based on the experiments. An interesting phenomenon, nano-pit creation instead of nano-dot creation, is observed when the applied pulse duration is less than 100 μs. Pulse frequency and offset voltage are also involved in nano-pit generation. The electrical spark discharge between the tip and the GaAs's surface is the most probable cause of the nano-pit creation and its generation mechanism is explained by considering the relevant pulse parameters. Nano-pits over 15 nm in depth are acquired on the GaAs substrate by adjusting the pulse conditions. This research facilitates the fabrication of more complex nano-structures on semiconductor materials since nano-dots and nano-pits could be easily made without any additional post-processes. (paper)

Epitaxial Garnets and Hexagonal Ferrites.

Science.gov (United States)

1982-04-20

guide growth of the epitaxial YIG films. Aluminum or gallium substitu- tions for iron were used in combination with lanthanum substitutions for yttrium... gallate spinel sub- strates. There was no difficulty with nucleation in the melt and film quality appeared to be similar to that observed previously...hexagonal ferrites. We succeeded in growing the M-type lead hexaferrite (magnetoplumbite) on gallate spinel substrates. We found that the PbO-based

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

Science.gov (United States)

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Thermodynamic concepts in semiconductor quantum dot technology

International Nuclear Information System (INIS)

Shchukin, V.

2001-01-01

Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

Development of nano SiO2 incorporated nano zinc phosphate coatings on mild steel

International Nuclear Information System (INIS)

Tamilselvi, M.; Kamaraj, P.; Arthanareeswari, M.; Devikala, S.; Selvi, J. Arockia

2015-01-01

Highlights: • Nano SiO 2 incorporated nano zinc phosphate coating on mild steel was developed. • Coatings showed enhanced corrosion resistance. • The nano SiO 2 is adsorbed on mild steel surface and become nucleation sites. • The nano SiO 2 accelerates the phosphating process. - Abstract: This paper reports the development of nano SiO 2 incorporated nano zinc phosphate coatings on mild steel at low temperature for achieving better corrosion protection. A new formulation of phosphating bath at low temperature with nano SiO 2 was attempted to explore the possibilities of development of nano zinc phosphate coatings on mild steel with improved corrosion resistance. The coatings developed were studied by Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Electrochemical measurements. Significant variation in the coating weight, morphology and corrosion resistance was observed as nano SiO 2 concentrations varied from 0.5–4 g/L. The results showed that, the nano SiO 2 in the phosphating solution changed the initial potential of the interface between mild steel substrate and phosphating solution and reduce the activation energy of the phosphating process, increase the nucleation sites and yielded zinc phosphate coatings of higher coating weight, greater surface coverage and enhanced corrosion resistance. Better corrosion resistance was observed for coatings derived from phosphating bath containing 1.5 g/L nano SiO 2 . The new formulation reported in the present study was free from Ni or Mn salts and had very low concentration of sodium nitrite (0.4 g/L) as accelerator

Growth and characterization of Ge nanostructures selectively grown on patterned Si

International Nuclear Information System (INIS)

Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

2008-01-01

By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

Graphene nanoribbons epitaxy on boron nitride

Energy Technology Data Exchange (ETDEWEB)

Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2016-03-14

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

Directory of Open Access Journals (Sweden)

Abe Shunsuke

2010-01-01

Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

International Nuclear Information System (INIS)

Suemasu, T.; Takakura, K.; Li, Cheng; Ozawa, Y.; Kumagai, Y.; Hasegawa, F.

2004-01-01

In this paper, we review the detailed study of epitaxial growth of β-FeSi 2 films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi 2 was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi 2 epitaxial films reached 6900 and 13000 cm 2 /V·s for the n- and p-type β-FeSi 2 , respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi 2 particles/n-Si structures prepared by RDE for β-FeSi 2 and by MBE for Si

To be nano or not to be nano?

Science.gov (United States)

Joachim, Christian

2005-02-01

Nanomaterials, nanostructures, nanostructured materials, nanoimprint, nanobiotechnology, nanophysics, nanochemistry, radical nanotechnology, nanosciences, nanooptics, nanoelectronics, nanorobotics, nanosoldiers, nanomedecine, nanoeconomy, nanobusiness, nanolawyer, nanoethics to name a few of the nanos. We need a clear definition of all these burgeoning fields for the sake of the grant attribution, for the sake of research program definition, and to avoid everyone being lost in so many nanos.

The nano-materials, at the heart of the nano galaxy; Les nano-materiaux, au coeur de la galaxie nano

Energy Technology Data Exchange (ETDEWEB)

Le Marois, G. [Direction Generale de l' Industrie, des Technologies de l' Information et des Postes, 75 - Paris (France); Carlac, D. [Societe Developpement et Conseil, 51 - Reims (France)

2004-02-01

The researches on nano-materials are continuously increasing in most of industrialized countries. Between 1998 and 2003, the corresponding investment has been multiplied by six in Europe, eight in Usa and in Japan, to reach 3 milliards of euros in the world. Based on the nano-technologies development, these materials would represent the main part of the market at short and middle dated. Many examples of utilization are presented. (A.L.B.)

Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

International Nuclear Information System (INIS)

Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

2013-01-01

Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

Aluminum Templates of Different Sizes with Micro-, Nano- and Micro/Nano-Structures for Cell Culture

Directory of Open Access Journals (Sweden)

Ming-Liang Yen

2017-10-01

Full Text Available This study investigates the results of cell cultures on aluminum (Al templates with flat-structures, micro-structures, nano-structures and micro/nano-structures. An Al template with flat-structure was obtained by electrolytic polishing; an Al template with micro-structure was obtained by micro-powder blasting; an Al template with nano-structure was obtained by aluminum anodization; and an Al template with micro/nano-structure was obtained by micro-powder blasting and then anodization. Osteoblast-like cells were cultured on aluminum templates with various structures. The microculture tetrazolium test assay was utilized to assess the adhesion, elongation, and proliferation behaviors of cultured osteoblast-like cells on aluminum templates with flat-structures, micro-structures, nano-structures, and micro/nano-structures. The results showed that the surface characterization of micro/nano-structure of aluminum templates had superhydrophilic property, and these also revealed that an aluminum template with micro/nano-structure could provide the most suitable growth situation for cell culture.

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

2010-01-01

We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

Nano-arrays of SAM by dip-pen nanowriting (DPN) technique for futuristic bio-electronic and bio-sensor applications

International Nuclear Information System (INIS)

Agarwal, Pankaj B.; Kumar, A.; Saravanan, R.; Sharma, A.K.; Shekhar, Chandra

2010-01-01

Nano-arrays of bio-molecules have potential applications in many areas namely, bio-sensors, bio/molecular electronics and virus detection. Spot array, micro-contact printing and photolithography are used for micron size array fabrications while Dip-Pen Nanowriting (DPN) is employed for submicron/nano size arrays. We have fabricated nano-dots of 16-MHA (16-mercaptohexadecanoic acid) self-assembled monolayer (SAM) on gold substrate by DPN technique with different dwell time under varying relative humidity. These patterns were imaged in the same system in LFM (Lateral Force Microscopy) mode with fast scanning speed (5 Hz). The effect of humidity on size variation of nano-dots has been studied. During experiments, relative humidity (RH) was varied from 20% to 60%, while the temperature was kept constant ∼ 25 o C. The minimum measured diameter of the dot is ∼ 294 nm at RH = 20% for a dwell time of 2 s. The thickness of the 16-MHA dots, estimated in NanoRule image analysis software is ∼ 2 nm, which agrees well with the length of single MHA molecule (2.2 nm). The line profile has been used to estimate the size and thickness of dots. The obtained results will be useful in further development of nano-array based bio-sensors and bio-electronic devices.

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

Science.gov (United States)

2009-02-19

34 (to be submitted to APL) " Positron Annihilation Spectroscopy of Annealed and As-grown Be-doped GaN" (to be submitted to APL - delayed by the...WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) 6. AUTHOR(S) DRS DOOLITTILE, FRAZIER, BURNHAM, PRITCHETT, BILLINGSLEY...NEXT GENERATION EPITAXY: NON-EQUILIBRIUM WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) VOLUME I 3D COMPOSITION/DOPING

Functional Nano fibers: Production and Applications

International Nuclear Information System (INIS)

Khatri, Z.; Kim, I.S.; Kim, S.H.

2016-01-01

Nano fibers are lighter material with higher surface area in comparison to polymeric film. The ease of producing functional nano fiber is another advantage over many nano materials. Functional nano fiber in particular has attained a greater interest in recent years. The applications of functional nano fibers are increasing in various technical fields such as water filter membranes, tissue engineering, biosensors, drug delivery systems, wound dressings, catalysis, antibacterial. This special issue is comprised of well-selective articles that discuss production of functional nano fibers their applications in different emerging fields. M. Zhang et al. have presented exciting work on drug delivery using nano fibers. They used collagen that was extracted from abandoned Rana chensinensis skin in northeastern China via an acid enzymatic extraction method. They demonstrated two different nano fiber-vancomycin (VCM) systems, that is, VCM blended nano fibers and core-shell nano fibers with VCM in the core, and both systems sustained control release for a period of 80 hours. Another work was presented by R. Takai et al. on blood purification using composite nano fibers. About 10% of the population worldwide is affected by chronic kidney disease (CKD). The authors developed nano fiber meshes zeolite-polymer composite nano fibers for efficient adsorption of creatinine, which is a simpler and more accessible method for hemodialysis (HD) patients.

Effects of incorporation of nano-fluorapatite or nano-fluorohydroxyapatite on a resin-modified glass ionomer cement.

Science.gov (United States)

Lin, Jun; Zhu, Jiajun; Gu, Xiaoxia; Wen, Wenjian; Li, Qingshan; Fischer-Brandies, Helge; Wang, Huiming; Mehl, Christian

2011-03-01

This study aimed to investigate the fluoride release properties and the effect on bond strength of two experimental adhesive cements. Synthesized particles of nano-fluorapatite (nano-FA) or nano-fluorohydroxyapatite (nano-FHA) were incorporated into a resin-modified glass ionomer cement (Fuji Ortho LC) and characterized using X-ray diffraction and scanning electron microscopy. Blocks with six different concentrations of nano-FA or nano-FHA were manufactured and their fluoride release properties evaluated by ultraviolet spectrophotometry. The unaltered glass ionomer cement Fuji Ortho LC (GC, control) and the two experimental cements with the highest fluoride release capacities (nano-FA+Fuji Ortho LC (GFA) and nano-FHA+Fuji Ortho LC (GFHA)) were used to bond composite blocks and orthodontic brackets to human enamel. After 24 h water storage all specimens were debonded, measuring the micro-tensile bond strength (μTBS) and the shear bond strength (SBS), respectively. The optimal concentration of added nano-FA and nano-FHA for maximum fluoride release was 25 wt.%, which nearly tripled fluoride release after 70 days compared with the control group. GC exhibited a significantly higher SBS than GFHA/GFA, with GFHA and GFA not differing significantly (P>0.05). The μTBS of GC and GFA were significantly higher than that of GFHA (P≤0.05). The results seem to indicate that the fluoride release properties of Fuji Ortho LC are improved by incorporating nano-FA or nano-FHA, simultaneously maintaining a clinically sufficient bond strength when nano-FA was added. Copyright © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

Science.gov (United States)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo; Dalmiglio, Matteo; Orlando, Fabrizio; Baraldi, Alessandro; Gammelgaard, Lauge; Barreto, Lucas; Bianchi, Marco; Perkins, Edward; Hofmann, Philip

2012-09-12

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

DEFF Research Database (Denmark)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

2012-01-01

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

International Nuclear Information System (INIS)

Zhang, J Y; Wang, X F; Wang, X D; Fan, Z C; Li, Y; Ji, An; Yang, F H

2010-01-01

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

Nano materials for Energy and Environmental Applications

International Nuclear Information System (INIS)

Srinivasan, S.; Kannan, A.M.; Kothurkar, N.; Khalil, Y.; Kuravi, S.

2015-01-01

Nano materials enabled technologies have been seamlessly integrated into applications such as aviation and space, chemical industry, optics, solar hydrogen, fuel cell, batteries, sensors, power generation, aeronautic industry, building/construction industry, automotive engineering, consumer electronics, thermoelectric devices, pharmaceuticals, and cosmetic industry. Clean energy and environmental applications often demand the development of novel nano materials that can provide shortest reaction pathways for the enhancement of reaction kinetics. Understanding the physicochemical, structural, microstructural, surface, and interface properties of nano materials is vital for achieving the required efficiency, cycle life, and sustain ability in various technological applications. Nano materials with specific size and shape such as nano tubes, nano fibers/nano wires, nano cones, nano composites, nano rods, nano islands, nanoparticles, nanospheres, and nano shells to provide unique properties can be synthesized by tuning the process conditions.

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Nano

DEFF Research Database (Denmark)

Nørgaard, Bent; Engel, Lars Romann

2007-01-01

Gennem de sidste par år har et lille ord med et meget stort potentiale gentagende trængt sig på i den offentlige bevidsthed, det er ordet "nano". Nanovidenskab og nanoteknologi er lige nu to af de "hotteste" forskningsområder og betragtes af mange som porten til en helt ny verden af muligheder....... Muligheder, vi endnu ikke kender konsekvenserne af. Center for Kunst og Videnskabs forestilling NANO giver dig chancen for at blive bekendt med verdens mindste byggesten og idégrundlaget for nanoforskningen. Vi har skabt et rum, som på mange måder minder om et laboratorium. Rummet er forsynet med storskærme......, kolber, væsker og nanopartikler. Her vil du f.eks. opleve, hvordan forskere tilfører guld helt nye egenskaber. Forestillingen veksler mellem kemiske arbejdsdemonstrationer, stemningsskabende musik og livlig debat på storskærme mellem eksperter. NANO opfordrer publikum til at tage stilling til forskningen...

The therapeutic effect of nano-encapsulated and nano-emulsion forms of carvacrol on experimental liver fibrosis.

Science.gov (United States)

Hussein, Jihan; El-Banna, Mona; Mahmoud, Khaled F; Morsy, Safaa; Abdel Latif, Yasmin; Medhat, Dalia; Refaat, Eman; Farrag, Abdel Razik; El-Daly, Sherien M

2017-06-01

The present study aimed to compare the therapeutic efficiency of nano-encapsulated and nano-emulsion carvacrol administration on liver injury in thioacetamide (TAA) treated rats. To fulfill our target, we used sixty male albino rats classified into six groups as follow: control, nano-encapsulated carvacrol, nano-emulsion carvacrol, thioacetamide, treated nano-encapsulated carvacrol and treated nano-emulsion carvacrol groups. Blood samples were collected from all groups and the separated serum was used for analysis of the following biochemical parameters; aspartate aminotransferase (AST), alanine aminotransferase (ALT), S100 B protein, alpha fetoprotein (AFP) and caspase-3. The levels of malondialdehyde (MDA), reduced glutathione (GSH), nitric oxide (NO), monocyte chemoattractant protein-1(MCP-1) and hydroxyproline content were all evaluated in liver tissue homogenate. Histopathological examinations for liver tissues were also performed. Thioacetamide induced hepatic damage in rats as revealed by the significant increase in the levels of serum ALT, AST and produced oxidative stress as displayed by the significant elevation in the levels of hepatic MDA and NO concomitant with a significant decrease in GSH. In addition, thioacetamide significantly increased serum S100B protein, alpha fetoprotein and caspase-3 along with hepatic MCP-1 and hydroxyproline; these results were confirmed by the histopathological investigation. In contrast, nano-encapsulated and nano-emulsion carvacrol were able to ameliorate these negative changes in the thioacetamide injected rats. However, the effect of the nano-encapsulated form of carvacrol was more prominent than the nano-emulsion form. Nano-encapsulated and nano-emulsion carvacrol can ameliorate thioacetamide induced liver injury. These results could be attributed to the potential anti-inflammatory, antioxidant, and anti-apoptotic activities of carvacrol in addition to the effectiveness of the encapsulation technique that can protect

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

Energy Technology Data Exchange (ETDEWEB)

Balzer, F., E-mail: fbalzer@mci.sdu.dk [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Sun, R. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Parisi, J. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany); Rubahn, H.-G. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Lützen, A. [University of Bonn, Kekulé Institute of Organic Chemistry and Biochemistry, Gerhard-Domagk-Str. 1, D-53121 Bonn (Germany); Schiek, M. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany)

2015-12-31

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

International Nuclear Information System (INIS)

Balzer, F.; Sun, R.; Parisi, J.; Rubahn, H.-G.; Lützen, A.; Schiek, M.

2015-01-01

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Quantum Nanostructures by Droplet Epitaxy

OpenAIRE

Somsak Panyakeow

2009-01-01

Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

Nano medicine in Action: An Overview of Cancer Nano medicine on the Market and in Clinical Trials

International Nuclear Information System (INIS)

Wang, R.; Billone, P.S.; Mullett, W.M.

2013-01-01

Nano medicine, defined as the application of nano technology in the medical field, has the potential to significantly change the course of diagnostics and treatment of life-threatening diseases, such as cancer. In comparison with traditional cancer diagnostics and therapy, cancer nano medicine provides sensitive cancer detection and/or enhances treatment efficacy with significantly minimized adverse effects associated with standard therapeutics. Cancer nano medicine has been increasingly applied in areas including nano drug delivery systems, nano pharmaceuticals, and nano analytical contrast reagents in laboratory and animal model research. In recent years, the successful introduction of several novel nano medicine products into clinical trials and even onto the commercial market has shown successful outcomes of fundamental research into clinics. This paper is intended to examine several nano medicines for cancer therapeutics and/or diagnostics-related applications, to analyze the trend of nano medicine development, future opportunities, and challenges of this fast-growing area.

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

A Fabrication Technique for Nano-gap Electrodes by Atomic Force Microscopy Nano lithography

International Nuclear Information System (INIS)

Jalal Rouhi; Shahrom Mahmud; Hutagalung, S.D.; Kakooei, S.

2011-01-01

A simple technique is introduced for fabrication of nano-gap electrodes by using nano-oxidation atomic force microscopy (AFM) lithography with a Cr/ Pt coated silicon tip. AFM local anodic oxidation was performed on silicon-on-insulator (SOI) surfaces by optimization of desired conditions to control process in contact mode. Silicon electrodes with gaps of sub 31 nm were fabricated by nano-oxidation method. This technique which is simple, controllable, inexpensive and fast is capable of fabricating nano-gap structures. The current-voltage measurements (I-V) of the electrodes demonstrated very good insulating characteristics. The results show that silicon electrodes have a great potential for fabrication of single molecule transistors (SMT), single electron transistors (SET) and the other nano electronic devices. (author)

Epitaxial growth of thin single-crystals and their quality study by Rutherford scattering in channeling conditions

International Nuclear Information System (INIS)

Kirsch, Robert.

1975-01-01

Some aspects of thin crystalline layers are reminded: vacuum deposition, epitaxial growth, annealing and interdiffusion ion channeling and scattering of 1-2MeV helium ions are used to study the crystalline quality, the annealing effects and in some cases the interdiffusion in epitaxial multilayers of silver, copper gold and nickel. Thin single-crystals of gold and nickel oriented (III) plan parallel to the surface were obtained by successive epitaxial growth from muscovite mica clivages. The mounting techniques of single crystalline, self-supporting, 300 to 1200 Angstroems thick, gold and nickel targets of 3mm diameter are described. The gold single-crystals have dislocation densities of 10 8 cm -2 and the various epitaxial layers are obtained without twinning [fr

Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

Directory of Open Access Journals (Sweden)

Mauguin O.

2012-11-01

Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

Micro and nano devices in passive millimetre wave imaging systems

Science.gov (United States)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

DEFF Research Database (Denmark)

Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

2008-01-01

deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

Morphological and electronic properties of epitaxial graphene on SiC

International Nuclear Information System (INIS)

Yakimova, R.; Iakimov, T.; Yazdi, G.R.; Bouhafs, C.; Eriksson, J.; Zakharov, A.; Boosalis, A.; Schubert, M.; Darakchieva, V.

2014-01-01

We report on the structural and electronic properties of graphene grown on SiC by high-temperature sublimation. We have studied thickness uniformity of graphene grown on 4H–SiC (0 0 0 1), 6H–SiC (0 0 0 1), and 3C–SiC (1 1 1) substrates and investigated in detail graphene surface morphology and electronic properties. Differences in the thickness uniformity of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. It is also shown that a lower substrate surface roughness results in more uniform step bunching and consequently better quality of the grown graphene. We have compared the three SiC polytypes with a clear conclusion in favor of 3C–SiC. Localized lateral variations in the Fermi energy of graphene are mapped by scanning Kelvin probe microscopy. It is found that the overall single-layer graphene coverage depends strongly on the surface terrace width, where a more homogeneous coverage is favored by wider terraces. It is observed that the step distance is a dominating, factor in determining the unintentional doping of graphene from the SiC substrate. Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene on 3C–SiC (1 1 1) is also reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C–SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at ∼4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si- and C-polarity of the 3C–SiC (1 1 1) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene.

Ceramic compositions based on nano forsterite/nano magnesium aluminate spinel powders

International Nuclear Information System (INIS)

Khattab, R.M.; Wahsh, M.M.S.; Khalil, N.M.

2015-01-01

According to the wide applications in the field of chemical and engineering industries, forsterite (Mg_2SiO_4)/spinel (MgAl_2O_4) ceramic compositions were the matter of interest of several research works during the last three decades. This work aims at preparation and characterization of improved ceramic bodies based on forsterite and spinel nano powders through controlling the forsterite and spinel contents in the prepared mixes. These prepared ceramic compositions have been investigated through measuring the densification parameters, cold crushing strength as well as volume resistively. Nano spinel was added from 0 to 30 mass% on expense of nano forsterite matrix and fired at 1550 °C for 2 h. The phase composition of the fired samples was examined using x-ray diffraction (XRD) technique. The microstructure of some selected samples was shown using scanning electron microscope (SEM). A pronounced improvement in the sintering, mechanical properties and volume resistively were achieved with increasing of nano spinel addition up to 15 mass%. This is due to the improvement in the matrix of the prepared forsterite/spinel bodies as a result of well distribution of spinel in the forsterite matrix as depicted by SEM analysis. - Highlights: • Ceramic compositions based on nano forsterite/nano-MgAl_2O_4 spinel were synthesized. • CCS was improved (333.78 MPa) through 15 mass% of nano-MgAl_2O_4 spinel addition. • Volume resistivity was enhanced to 203*10"1"3 Ohm cm with 15 mass% of spinel addition. • Beyond 15 mass% spinel, CCS and volume resistivity were decreased.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Science.gov (United States)

2015-11-13

October 11, 2015 Accepted: November 13, 2015 A rtic le www.acsnano.org © XXXX American Chemical Society A DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX ...interface between EG and MoS2 is highlighted in red. ACS Nano Article DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX , XXX, XXX−XXX B The as-grown MoS2/EG...orientations. ACS Nano Article DOI: 10.1021/acsnano.5b06398 ACS Nano XXXX , XXX, XXX−XXX C nature of EG give rise to the inversion of the relative DOS at

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Science.gov (United States)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

Science.gov (United States)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

CZT nanoRAIDER_VFG Factsheet

Energy Technology Data Exchange (ETDEWEB)

James, R. [Brookhaven National Lab. (BNL), Upton, NY (United States); Bolotnikov, A. E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Cui, Yonggang [Brookhaven National Lab. (BNL), Upton, NY (United States)

2016-01-15

Brookhaven National Laboratory (BNL) is working with FLIR System Inc., the manufacturer of the nanoRAIDER, to design a handheld device based on a position-sensitive virtual Frisch-grid (VFG) Cadmium-Zinc-Telluride (CdZnTe or CZT) detector array (with 1% or better energy resolution). The new device called nanoRAIDER VFG will be an improvement to the current nanoRAIDER, which is a compact gamma-ray detection instrument manufactured by FLIR Systems Inc. that employs relatively lower-performing CZT hemispheric detectors (i.e., 3%-FWHM CZT detectors). The nanoRAIDER will significantly improve the accuracy while maintaining similar efficiency, as compared to the nanoRAIDER, for in-field analysis of nuclear materials and detection of undeclared activities during inspections conducted by the International Atomic Energy Agency (IAEA). Since the nanoRAIDER is currently used by the IAEA as part of its Complementary Access toolkit, a relatively quick acceptance of the nanoRAIDER VFG for safeguards is anticipated. The nanoRAIDER VFG will help address several items listed in the IAEA’s Long-Term R&D Plan that could enhance the abilities to detect undeclared nuclear material and activities.

6. international conference on Nano-technology in Carbon: from synthesis to applications of nano-structured carbon and related materials

International Nuclear Information System (INIS)

2004-01-01

This is the sixth international conference sponsored this year by the French Carbon Group (GFEC), the European Research Group on Nano-tubes GDRE 'Nano-E', in collaboration with the British Carbon Group and the 'Institut des Materiaux Jean Rouxel' (local organizer). The aim of this conference is to promote carbon science in the nano-scale as, for example, nano-structured carbons, nano-tubes, nano-wires, fullerenes, etc. This conference is designed to introduce those with an interest in materials to current research in nano-technology and to bring together research scientists working in various disciplines in the broad area of nano-structured carbons, nano-tubes and fullerene-related nano-structures. Elemental carbon is the simplest exemplar of this nano-technology based on covalent bonding, however other systems (for example containing hetero-atoms) are becoming important from a research point of view, and provide alternative nano-materials with unique properties opening a broad field of applications. Nano-technology requires an understanding of these materials on a structural and textural point of view and this will be the central theme. This year the conference will feature sessions on: S1. Control and synthesis of nano-materials 1.1 Nano-structured carbons: pyrolysis of polymers, activation, templates,... 1.2 Nano-tubes: Catalytic method, HiPCO, graphite vaporization, electrolysis,... 1.3 Fullerenes S2. Chemistry of carbon nano-materials 2.1 Purification of carbon nano-tubes 2.2 Functionalization - Self-assembling S3. Structural characterization S4. Theory and modelling S5. Relationship between structure and properties S6. Applications Water and air purification, Gas and energy storage, Composite materials, Field emission, Nano-electronics, Biotechnology,... S7. Environmental impact. Only one paper concerning carbon under irradiation has been added to the INIS database. (authors)

Fundamental Issues of Nano-fluid Behavior

International Nuclear Information System (INIS)

Williams, Wesley C.

2006-01-01

This paper will elucidate some of the behaviors of nano-fluids other than the abnormal conductivity enhancement, which are of importance to the experimental and engineering use of nano-fluids. Nano-fluid is the common name of any sol colloid involving nano-scale (less than 100 nm) sized particles dispersed within a base fluid. It has been shown previously that the dispersion of nano-particulate metallic oxides into water can increase thermal conductivity up to 30-40% over that of the base fluid and anomalously more than the mere weighed average of the colloid. There is a great potential for the use of nano-fluids as a way to enhance fluid/thermal energy transfer systems. Due to the recentness of nano-fluid science, there are still many issues which have not been fully investigated. This paper should act as a primer for the basic understanding of nano-fluid behavior. Particle size and colloid stability are of key importance to the functionality of nano-fluids. The pH and concentration/loading of nano-fluids can alter the size of the nano-particles and also the stability of the fluids. It will be shown through experiment and colloid theory the importance of these parameters. Furthermore, most of the existing literature uses volume percentage as the measure of particle loading, which can often be misleading. There will be discussion of this and other misleading ideas in nano-fluid science. (author)

Electrodeposition of nickel nano wire arrays

International Nuclear Information System (INIS)

Nur Ubaidah Saidin; Kok Kuan Ying; Ng Inn Khuan; Nurazila Mat Zali; Siti Salwa Zainal Abidin

2010-01-01

Synthesis, characterization and assembly of one-dimensional nickel nano wires prepared by template directed electrodeposition are discussed in this paper. Parallel arrays of high aspect ratio nickel nano wires were electrodeposited using electrolytes with different cations and pH. The nano wires were characterized using X-ray diffractometry and scanning electron microscopy. It was found that the orientations of the electro deposited Ni nano wires were governed by the deposition current and the electrolyte conditions. Free standing nickel nano wires can be obtained by dissolving the template. Due to the magnetic nature of the nano wires, magnetic alignment was employed to assemble and position the free standing nano wires in the device structure. (author)

Photovoltaic x-ray detectors based on the GaAs epitaxial structures

CERN Document Server

Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

2002-01-01

The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

1994-01-01

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Formation of Au nano-patterns on various substrates using simplified nano-transfer printing method

Science.gov (United States)

Kim, Jong-Woo; Yang, Ki-Yeon; Hong, Sung-Hoon; Lee, Heon

2008-06-01

For future device applications, fabrication of the metal nano-patterns on various substrates, such as Si wafer, non-planar glass lens and flexible plastic films become important. Among various nano-patterning technologies, nano-transfer print method is one of the simplest techniques to fabricate metal nano-patterns. In nano-transfer printing process, thin Au layer is deposited on flexible PDMS mold, containing surface protrusion patterns, and the Au layer is transferred from PDMS mold to various substrates due to the difference of bonding strength of Au layer to PDMS mold and to the substrate. For effective transfer of Au layer, self-assembled monolayer, which has strong bonding to Au, is deposited on the substrate as a glue layer. In this study, complicated SAM layer coating process was replaced to simple UV/ozone treatment, which can activates the surface and form the -OH radicals. Using simple UV/ozone treatments on both Au and substrate, Au nano-pattern can be successfully transferred to as large as 6 in. diameter Si wafer, without SAM coating process. High fidelity transfer of Au nano-patterns to non-planar glass lens and flexible PET film was also demonstrated.

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

OpenAIRE

Hyoungjeen Jeen; Ho Nyung Lee

2015-01-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model syste...

Liquid phase electro epitaxy growth kinetics of GaAs-A three-dimensional numerical simulation study

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2006-01-01

A three-dimensional numerical simulation study for the liquid phase electro epitaxial growth kinetic of GaAs is presented. The kinetic model is constructed considering (i) the diffusive and convective mass transport, (ii) the heat transfer due to thermoelectric effects such as Peltier effect, Joule effect and Thomson effect, (iii) the electric current distribution with electromigration and (iv) the fluid flow coupled with concentration and temperature fields. The simulations are performed for two configurations namely (i) epitaxial growth from the arsenic saturated gallium rich growth solution, i.e., limited solution model and (ii) epitaxial growth from the arsenic saturated gallium rich growth solution with polycrystalline GaAs feed. The governing equations of liquid phase electro epitaxy are solved numerically with appropriate initial and boundary conditions using the central difference method. Simulations are performed to determine the following, a concentration profiles of solute atoms (As) in the Ga-rich growth solution, shape of the substrate evolution, the growth rate of the GaAs epitaxial film, the contributions of Peltier effect and electromigration of solute atoms to the growth with various experimental growth conditions. The growth rate is found to increase with increasing growth temperature and applied current density. The results are discussed in detail

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

Science.gov (United States)

Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

2018-06-06

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

AC dielectrophoresis alignment of single-walled carbon nano tubes (SWNTS) and palladium nano wires for hydrogen gas sensor

International Nuclear Information System (INIS)

Nur Ubaidah Saidin; Nur Ubaidah Saidin; Ying, K.K.; KKhuan, N.I.; Mohammad Hafizuddin Jumali

2013-01-01

Full-text: Using AC electric field, nano wires or nano tubes can be aligned, chained or accelerated in a direction parallel to the applied field, oriented or concentrated onto designated locations as well as dispersed in controlled manner under high efficiencies. In this work, systematic study on the alignment of nano wires/ nano tubes across the 3 μm-gaps between pairs of micro fabricated gold electrodes was carried out using AC dielectrophoresis technique. Densities and alignment of the nano wires/ nano tubes across the gaps of the electrodes were controlled by the applied AC field strengths and frequencies on the electrodes. Good alignments of SWNTs and Pd nano wires were achieved at an applied frequency of 5 MHz and a field strength as high as 25 V pp for Pd nano wires compared to only 2 V pp for SWNTs. The aligned nano wires/ nano tubes will be functioned as sensor elements for hydrogen gas sensing. (author)

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

Nonlinear super-resolution nano-optics and applications

CERN Document Server

Wei, Jingsong

2015-01-01

This book covers many advances in the subjects of nano-optics and nano photonics. The author describes the principle and technical schematics of common methods for breaking through the optical diffraction limit and focuses on realizing optical super-resolution with nonlinear effects of thin film materials. The applications of nonlinear optical super-resolution effects in nano-data storage, nanolithography, and nano-imaging are also presented. This book is useful to graduate students majoring in optics and nano science and also serves as a reference book for academic researchers, engineers, technical professionals in the fields of super-resolution optics and laser techniques, nano-optics and nano photonics, nano-data storage, nano imaging, micro/nanofabrication and nanolithography and nonlinear optics.

Nano-ceramics and its molding technologies

International Nuclear Information System (INIS)

Liu Jian; Xu Yunshu

2007-01-01

Nano-ceramics and its related knowledge were introduced. Fabrication of nano-ceramic powder, as well as the molding and sintering technologies of nano-ceramics were reviewed. Features of the present molding technologies were analyzed. The applications of nano-ceramics were prospected. (authors)

Phosphorylated nano-diamond/ Polyimide Nanocomposites

International Nuclear Information System (INIS)

Beyler-Çiǧil, Asli; Çakmakçi, Emrah; Kahraman, Memet Vezir

2014-01-01

In this study, a novel route to synthesize polyimide (PI)/phosphorylated nanodiamond films with improved thermal and mechanical properties was developed. Surface phosphorylation of nano-diamond was performed in dichloromethane. Phosphorylation dramatically enhanced the thermal stability of nano-diamond. Poly(amic acid) (PAA), which is the precursor of PI, was successfully synthesized with 3,3',4,4'-Benzophenonetetracarboxylic dianhydride (BTDA) and 4,4'-oxydianiline (4,4'-ODA) in the solution of N,N- dimethylformamide (DMF). Pure BTDA-ODA polyimide films and phosphorylated nanodiamond containing BTDA-ODA PI films were prepared. The PAA displayed good compatibility with phosphorylated nano-diamond. The morphology of the polyimide (PI)/phosphorylated nano-diamond was characterized by scanning electron microscopy (SEM). Chemical structure of polyimide and polyimide (PI)/phosphorylated nano-diamond was characterized by FTIR. SEM and FTIR results showed that the phosphorylated nano-diamond was successfully prepared. Thermal properties of the polyimide (PI)/phosphorylated nanodiamond was characterized by thermogravimetric analysis (TGA). TGA results showed that the thermal stability of (PI)/phosphorylated nano-diamond film was increased

Nano surface generation of grinding process using carbon nano tubes

Indian Academy of Sciences (India)

Nano surface finish has become an important parameter in the semiconductor, optical, electrical and mechanical industries. The materials used in these industries are classified as difficult to machine materials such as ceramics, glasses and silicon wafers. Machining of these materials up to nano accuracy is a great ...

Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

Directory of Open Access Journals (Sweden)

K.-H. Cho

2013-10-01

Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

Pharmaceutical Applications of Polymeric Nano materials

International Nuclear Information System (INIS)

Wu, L.; Sun, L.

2011-01-01

With significant attention focused on nano science and nano technology in recent years, nano materials have been used in a wide variety of applications such as automotive, environmental, energy, catalysis, biomedical, drug delivery, and polymeric industries. Among those fields, the application of nano materials with pharmaceutical science is an emerging and rapidly growing field and has drawn increasing attention recently. Research and development in this field is mainly focused on several aspects such as the discoveries of novel functional nano materials, exploration on nanoparticles with controlled and targeted drug delivery characteristics, and investigation of bio functionalized and diagnostic nano materials. In this special issue, we have invited a few papers related to recent advances in pharmaceutical application of polymeric nano materials

A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

International Nuclear Information System (INIS)

Heera, V.

1989-01-01

A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

Separation of Am-Cm from NaNO3 waste solutions by in-canyon-tank precipitation as oxalates

International Nuclear Information System (INIS)

Gray, L.W.; Burney, G.A.; Wilson, T.W.; McKibben, J.M.

1981-09-01

A process for the purification of Am-Cm residues was developed specifically for application in Savannah River Plant (SRP) canyon tanks. These Am-Cm residues were collected from several campaigns to produce plutonium containing high isotopic concentrations of 240 Pu. An initial purification from Al 3+ had already been accomplished by a solvent extraction process. The product of this process was contaminated with NaNO 3 as a result of entrainment of the solvent extraction NaNO 3 scrub solution. To produce an acceptable feed solution for a later pressurized cation exchange chromatography separation and purification step, the bulk of the NaNO 3 must be removed. This purification process includes formic acid denitration, adjustment of contaminating cations by evaporation and water dilution, and oxalate precipitation of the actinides and lanthanides. After washing, the precipitate was dissolved in 8M nitric acid, and the oxalate was destroyed by nitric acid oxidation

Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

International Nuclear Information System (INIS)

Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

1989-01-01

Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

KAUST Repository

Tsai, Meng-Lin

2016-10-28

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Science.gov (United States)

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Nano structures for Medical Diagnostics Md

International Nuclear Information System (INIS)

Bellah, M.; Iqbal, S.M.; Bellah, M.; Iqbal, S.M.; Christensen, S.M.; Iqbal, S.M.; Iqbal, S.M.

2012-01-01

Nano technology is the art of manipulating materials on atomic or molecular scales especially to build nano scale structures and devices. The field is expanding quickly, and a lot of work is ongoing in the design, characterization, synthesis, and application of materials, structures, devices, and systems by controlling shape and size at nanometer scale. In the last few years, much work has been focused on the use of nano structures toward problems of biology and medicine. In this paper, we focus on the application of various nano structures and nano devices in clinical diagnostics and detection of important biological molecules. The discussion starts by introducing some basic techniques of micro-/nano scale fabrication that have enabled reproducible production of nano structures. The prospects, benefits, and limitations of using these novel techniques in the fields of bio detection and medical diagnostics are then discussed. Finally, the challenges of mass production and acceptance of nano technology by the medical community are considered.

X-ray diffraction study of rare earth epitaxial structures grown by MBE onto (111) GaAs

International Nuclear Information System (INIS)

Bennett, W.R.; Farrow, R.F.C.; Parkin, S.S.P.; Marinero, E.E.; Segmuller, A.P.

1989-01-01

The authors report on the new epitaxial system LaF 3 /Er/Dy/Er/LaF 3 /GaAs(111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF 3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

DEFF Research Database (Denmark)

Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

2012-01-01

-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

On the kinetic barriers of graphene homo-epitaxy

International Nuclear Information System (INIS)

Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

2014-01-01

The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

Manipulation and functionalization of nano-tubes: application to boron nitride nano-tubes

International Nuclear Information System (INIS)

Maguer, A.

2007-01-01

This PhD work is divided into two parts dealing with boron nitride (BNNT) and carbon nano-tubes. The first part is about synthesis, purification and chemical functionalization of BNNT. Single-walled BNNT are synthesized by LASER ablation of a hBN target. Improving the synthesis parameters first allowed us to limit the byproducts (hBN, boric acid). A specific purification process was then developed in order to enrich the samples in nano-tubes. Purified samples were then used to develop two new chemical functionalization methods. They both involve chemical molecules that present a high affinity towards the BN network. The use of long chain-substituted quinuclidines and borazines actually allowed the solubilization of BNNT in organic media. Purification and functionalization were developed for single-walled BNNT and were successfully applied to multi-walled BNNT. Sensibility of boron to thermic neutrons finally gave birth to a study about covalent functionalization possibilities of the network. The second part of the PhD work deals with separation of carbon nano-tubes depending on their properties. Microwave irradiation of carbon nano-tubes first allowed the enrichment of initially polydisperse samples in large diameter nano-tubes. A second strategy involving selective interaction between one type of tubes and fullerene micelles was finally envisaged to selectively solubilize carbon nano-tubes with specific electronic properties. (author) [fr

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

Magnetic anisotropy basis sets for epitaxial (110) and (111) REFe2 nanofilms

International Nuclear Information System (INIS)

Bowden, G J; Martin, K N; Fox, A; Rainford, B D; Groot, P A J de

2008-01-01

Magnetic anisotropy basis sets for the cubic Laves phase rare earth intermetallic REFe 2 compounds are discussed in some detail. Such compounds can be either free standing, or thin films grown in either (110) or (111) mode using molecular beam epitaxy. For the latter, it is useful to rotate to a new coordinate system where the z-axis coincides with the growth axes of the film. In this paper, three symmetry adapted basis sets are given, for multi-pole moments up to n = 12. These sets can be used for free-standing compounds and for (110) and (111) epitaxial films. In addition, the distortion of REFe 2 films, grown on sapphire substrates, is also considered. The distortions are different for the (110) and (111) films. Strain-induced harmonic sets are given for both specific and general distortions. Finally, some predictions are made concerning the preferred direction of easy magnetization in (111) molecular beam epitaxy grown REFe 2 films

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Bondi, A.; Cornet, C.; Boyer, S.; Nguyen Thanh, T.; Létoublon, A.; Pedesseau, L.; Durand, O. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR-CNRS n°6251, Université Rennes1, Campus de Beaulieu — 35042 Rennes cedex (France); Ponchet, A. [CEMES, UPR CNRS 8011, F-31055 Toulouse (France); Le Corre, A. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Even, J., E-mail: jacky.even@insa.rennes.fr [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France)

2013-08-31

Raman spectroscopy was used to investigate the residual strain in thin GaP layers deposited on Si substrates by molecular beam epitaxy. Different growth conditions were used to obtain a clean GaP–Si interface, including migration enhanced epitaxy. The strain induced Raman shifts of the longitudinal and the transverse optical GaP lattice modes were analyzed. The effects of crystalline defects are discussed, supported by high resolution transmission electron microscopy and X-ray scattering studies. Finally, Raman Spectroscopy reveals the presence of disorder (or surface)-activated optical phonons. This result is discussed in the light of surface morphology analyses. - Highlights: ► GaP thin layers grown by molecular beam epitaxy on Si substrates. ► Strain-induced Raman shifts of the optical GaP modes are analyzed. ► Simulation of optical GaP modes by density functional perturbation theory. ► Comparison with X-ray diffraction and electron and scanning probe microscopy data.

Epitaxial hexagonal materials on IBAD-textured substrates

Science.gov (United States)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Nano Fertilizers

Directory of Open Access Journals (Sweden)

Hatice DAĞHAN

2017-06-01

Full Text Available Agricultural land is decreasing day by day due to erosion, environmental pollution, unconscious irrigation and fertilization. On the other hand, it is necessary to increase agricultural production in order to meet the needs of the developing industry as well as the nutritional needs of the growing population. In the recent years, nano fertilizers have begun to be produced to obtain the highest amount and quality of production from the unit area. Previous research shows that nano fertilizers cause an increase in the use efficiency of plant nutrients, reduce soil toxicity, minimize the potential adverse effects of excessive chemical fertilizer use, and reduce fertilizer application frequency. Nano fertilizers are important in agriculture to increase crop yield and nutrient use efficiency, and to reduce excessive use ofchemical fertilizers. The most important properties of these fertilizers are that they contain one or more of macro and micronutrients, they can be applied frequently in small amounts and are environmentally friendly. However, when applied at high doses, they exhibit decreasing effects on plant growth and crop yields, similar to chemical fertilizers. In this review, the definition, importan ce, and classification of nano fertilizers, their application in plant production, advantages and disadvantages and the results obtained in this field were discussed.

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Carbon nanotubes: from nano test tube to nano-reactor.

Science.gov (United States)

Khlobystov, Andrei N

2011-12-27

Confinement of molecules and atoms inside carbon nanotubes provides a powerful strategy for studying structures and chemical properties of individual molecules at the nanoscale. In this issue of ACS Nano, Allen et al. explore the nanotube as a template leading to the formation of unusual supramolecular and covalent structures. The potential of carbon nanotubes as reactors for synthesis on the nano- and macroscales is discussed in light of recent studies.

Quantum Hall effect in epitaxial graphene with permanent magnets.

Science.gov (United States)

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Quantum Hall effect in epitaxial graphene with permanent magnets

Science.gov (United States)

Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

2016-12-01

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

Addition of Sb as a surfactant for the growth of nonpolar a-plane GaN by using mixed-source hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Ok, Jin Eun; Jo, Dong Wan; Yun, Wy Il; Han, Young Hun; Jeon, Hun Soo; Lee, Gang Suok; Jung, Se Gyo; Bae, Seon Min; Ahn, Hyung Soo; Yang, Min

2011-01-01

The influence of Sb as a surfactant on the morphology and on the structural and the optical characteristics of a-plane GaN grown on r-plane sapphire by using mixed-source hydride vapor phase epitaxy was investigated. The a-plane GaN:Sb layers were grown at various temperatures ranging from 1000 .deg. C to 1100 .deg. C, and the reactor pressure was maintained at 1 atm. The atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD) and photoluminescence(PL) results indicated that the surface morphologies and the structural and the optical characteristics of a-plane GaN were markedly improved, compared to the a-plane GaN layers grown without Sb, by using Sb as a surfactant. The addition of Sb was found to alter epitaxial lateral overgrowth (ELO) facet formation. The Sb was not detected from the a-plane-GaN epilayers within the detection limit of the energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) measurements, suggesting that Sb act as a surfactant during the growth of a-plane GaN by using mixed-source HVPE method.

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

2014-01-01

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

Energy Technology Data Exchange (ETDEWEB)

Imani, Rana; Emami, Shahriar Hojjati, E-mail: semami@aut.ac.ir [Amirkabir University of Technology, Department of Biomedical Engineering (Iran, Islamic Republic of); Faghihi, Shahab, E-mail: shahabeddin.faghihi@mail.mcgill.ca, E-mail: sfaghihi@nigeb.ac.ir [National Institute of Genetic Engineering and Biotechnology, Tissue Engineering and Biomaterials Division (Iran, Islamic Republic of)

2015-02-15

A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV–Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets’ surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50–100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high

Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

Science.gov (United States)

Imani, Rana; Emami, Shahriar Hojjati; Faghihi, Shahab

2015-02-01

A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV-Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets' surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50-100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high surface

Nano-graphene oxide carboxylation for efficient bioconjugation applications: a quantitative optimization approach

International Nuclear Information System (INIS)

Imani, Rana; Emami, Shahriar Hojjati; Faghihi, Shahab

2015-01-01

A method for carboxylation of graphene oxide (GO) with chloroacetic acid that precisely optimizes and controls the efficacy of the process for bioconjugation applications is proposed. Quantification of COOH groups on nano-graphene oxide sheets (NGOS) is performed by novel colorimetric methylene blue (MB) assay. The GO is synthesized and carboxylated by chloroacetic acid treatment under strong basic condition. The size and morphology of the as-prepared NGOS are characterized by scanning electron microscopy, transmission electron microscopy (TEM), and atomic force microscopy (AFM). The effect of acid to base molar ratio on the physical, chemical, and morphological properties of NGOS is analyzed by Fourier-transformed infrared spectrometry (FTIR), UV–Vis spectroscopy, X-ray diffraction (XRD), AFM, and zeta potential. For evaluation of bioconjugation efficacy, the synthesized nano-carriers with different carboxylation ratios are functionalized by octaarginine peptide sequence (R8) as a biomolecule model containing amine groups. The quantification of attached R8 peptides to graphene nano-sheets’ surface is performed with a colorimetric-based assay which includes the application of 2,4,6-Trinitrobenzene sulfonic acid (TNBS). The results show that the thickness and lateral size of nano-sheets are dramatically decreased to 0.8 nm and 50–100 nm after carboxylation process, respectively. X-ray analysis shows the nano-sheets interlaying space is affected by the alteration of chloroacetic acid to base ratio. The MB assay reveals that the COOH groups on the surface of NGOS are maximized at the acid to base ratio of 2 which is confirmed by FTIR, XRD, and zeta potential. The TNBS assay also shows that bioconjugation of the optimized carboxylated NGOS sample with octaarginine peptide is 2.5 times more efficient compared to bare NGOS. The present work provides evidence that treatment of GO by chloroacetic acid under an optimized condition would create a functionalized high

NanoTopoChip: High-throughput nanotopographical cell instruction.

Science.gov (United States)

Hulshof, Frits F B; Zhao, Yiping; Vasilevich, Aliaksei; Beijer, Nick R M; de Boer, Meint; Papenburg, Bernke J; van Blitterswijk, Clemens; Stamatialis, Dimitrios; de Boer, Jan

2017-10-15

Surface topography is able to influence cell phenotype in numerous ways and offers opportunities to manipulate cells and tissues. In this work, we develop the Nano-TopoChip and study the cell instructive effects of nanoscale topographies. A combination of deep UV projection lithography and conventional lithography was used to fabricate a library of more than 1200 different defined nanotopographies. To illustrate the cell instructive effects of nanotopography, actin-RFP labeled U2OS osteosarcoma cells were cultured and imaged on the Nano-TopoChip. Automated image analysis shows that of many cell morphological parameters, cell spreading, cell orientation and actin morphology are mostly affected by the nanotopographies. Additionally, by using modeling, the changes of cell morphological parameters could by predicted by several feature shape parameters such as lateral size and spacing. This work overcomes the technological challenges of fabricating high quality defined nanoscale features on unprecedented large surface areas of a material relevant for tissue culture such as PS and the screening system is able to infer nanotopography - cell morphological parameter relationships. Our screening platform provides opportunities to identify and study the effect of nanotopography with beneficial properties for the culture of various cell types. The nanotopography of biomaterial surfaces can be modified to influence adhering cells with the aim to improve the performance of medical implants and tissue culture substrates. However, the necessary knowledge of the underlying mechanisms remains incomplete. One reason for this is the limited availability of high-resolution nanotopographies on relevant biomaterials, suitable to conduct systematic biological studies. The present study shows the fabrication of a library of nano-sized surface topographies with high fidelity. The potential of this library, called the 'NanoTopoChip' is shown in a proof of principle HTS study which

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

KAUST Repository

Chen, Junze

2017-06-05

Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.

In situ fabrication of quasi-free-standing epitaxial graphene nanoflakes on gold.

Science.gov (United States)

Leicht, Philipp; Zielke, Lukas; Bouvron, Samuel; Moroni, Riko; Voloshina, Elena; Hammerschmidt, Lukas; Dedkov, Yuriy S; Fonin, Mikhail

2014-04-22

Addressing the multitude of electronic phenomena theoretically predicted for confined graphene structures requires appropriate in situ fabrication procedures yielding graphene nanoflakes (GNFs) with well-defined geometries and accessible electronic properties. Here, we present a simple strategy to fabricate quasi-free-standing GNFs of variable sizes, performing temperature programmed growth of graphene flakes on the Ir(111) surface and subsequent intercalation of gold. Using scanning tunneling microscopy (STM), we show that epitaxial GNFs on a perfectly ordered Au(111) surface are formed while maintaining an unreconstructed, singly hydrogen-terminated edge structure, as confirmed by the accompanying density functional theory (DFT) calculations. Using tip-induced lateral displacement of GNFs, we demonstrate that GNFs on Au(111) are to a large extent decoupled from the Au(111) substrate. The direct accessibility of the electronic states of a single GNF is demonstrated upon analysis of the quasiparticle interference patterns obtained by low-temperature STM. These findings open up an interesting playground for diverse investigations of graphene nanostructures with possible implications for device fabrication.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Nano-cellulose biopolymer based nano-biofilm biomaterial using plant biomass: An innovative plant biomaterial dataset

Directory of Open Access Journals (Sweden)

A.B.M. Sharif hossain

2018-04-01

Full Text Available The nano-cellulose derived nano-biofilm keeps a magnificent role in medical, biomedical, bioengineering and pharmaceutical industries. Plant biomaterial is naturally organic and biodegradable. This study has been highlighted as one of the strategy introducing biomass based nano-bioplastic (nanobiofilm to solve dependency on petroleum and environment pollution because of non-degradable plastic. The data study was carried out to investigate the nano-biopolymer (nanocellulose based nano-biofilm data from corn leaf biomass coming after bioprocess technology without chemicals. Corn leaf biomass was used to produce biodegradable nano-bioplastic for medical and biomedical and other industrial uses. Data on water absorption, odor, pH, cellulose content, shape and firmness, color coating and tensile strength test have been exhibited under standardization of ASTM (American standard for testing and materials. Moreover, the chemical elements of nanobiofilm like K+, CO3−−, Cl−, Na+ showed standard data using the EN (166. Keywords: Nanocellulose, Nanobiofilm, Nanobioplastic, Biodegradable, Corn leaf

Nano-structural characteristics and optical properties of silver chiral nano-flower sculptured thin films

International Nuclear Information System (INIS)

Savaloni, Hadi; Haydari-Nasab, Fatemh; Malmir, Mariam

2011-01-01

Silver chiral nano-flowers with 3-, 4- and 5-fold symmetry were produced using oblique angle deposition method in conjunction with the rotation of sample holder with different speeds at different sectors of each revolution corresponding to symmetry order of the acquired nano-flower. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), were employed to obtain morphology and nano-structure of the films. Optical characteristics of silver chiral nano-flower thin films were obtained using single beam spectrophotometer with both s- and p-polarization incident light at 30 o and 70 o incidence angles and at different azimuthal angles (φ). Optical spectra showed both TM (TDM (transverse dipole mode) and TQM (transverse quadruple mode)) and LM (longitudinal mode) Plasmon resonance peaks. For 3- and 4-fold symmetry chiral nano-flowers the s-polarization extinction spectra obtained at different azimuthal angles did not show significant change in the Plasmon peak position while 5-fold symmetry chiral nano-flower showed a completely different behavior, which may be the result of increased surface anisotropy, so when the φ angle is changed the s-polarization response from the surface can change more significantly than that for lower symmetries. In general, for 3-, 4- and 5-fold symmetry chiral nano-flowers a sharp peak at lower wavelengths ( o incidence angle.

Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

International Nuclear Information System (INIS)

Fromm, F; Wehrfritz, P; Seyller, Th; Hundhausen, M

2013-01-01

Raman spectroscopy is frequently used to study the properties of epitaxial graphene grown on silicon carbide (SiC). In this work, we present a confocal micro-Raman study of epitaxial graphene on SiC(0001) in top-down geometry, i.e. in a geometry where both the primary laser light beam as well as the back-scattered light is guided through the SiC substrate. Compared to the conventional top-up configuration, in which confocal micro-Raman spectra are measured from the air side, we observe a significant intensity enhancement in top-down configuration, indicating that most of the Raman-scattered light is emitted into the SiC substrate. The intensity enhancement is explained in terms of dipole radiation at a dielectric surface. The new technique opens the possibility to probe graphene layers in devices where the graphene layer is covered by non-transparent materials. We demonstrate this by measuring gate-modulated Raman spectra of a top-gated epitaxial graphene field effect device. Moreover, we show that these measurements enable us to disentangle the effects of strain and charge on the positions of the prominent Raman lines in epitaxial graphene on SiC. (paper)

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-01

Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

Aligned Layers of Silver Nano-Fibers

Directory of Open Access Journals (Sweden)

Andrii B. Golovin

2012-02-01

Full Text Available We describe a new dichroic polarizers made by ordering silver nano-fibers to aligned layers. The aligned layers consist of nano-fibers and self-assembled molecular aggregates of lyotropic liquid crystals. Unidirectional alignment of the layers is achieved by means of mechanical shearing. Aligned layers of silver nano-fibers are partially transparent to a linearly polarized electromagnetic radiation. The unidirectional alignment and density of the silver nano-fibers determine degree of polarization of transmitted light. The aligned layers of silver nano-fibers might be used in optics, microwave applications, and organic electronics.

Microwave impedance of epitaxial high-temperature superconductor films

International Nuclear Information System (INIS)

Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

1995-01-01

In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

Energy Technology Data Exchange (ETDEWEB)

Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

2014-09-30

Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

Self-aligned periodic Ni nano dots embedded in nano-oxide layer

International Nuclear Information System (INIS)

Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

2007-01-01

The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface

Review on Nano SeleniumProduced by Bacteria

Directory of Open Access Journals (Sweden)

LI Ji-xiang

2014-12-01

Full Text Available Selenium (Se is a kind of essential trace element for people and animal, while ionic state of selenium is toxic with high concentrations and will cause the selenium pollution. Nano-selenium is stable, nontoxic with higher biological activity. Application of bacteria reducing selenite or selenate to biological nano-selenium has great potential in selenium pollution control and nano-selenium production. This review summarizes the research progress of the red elemental nano-selenium reduced by bacteria including characteristics and application of nano-selenium, effects of carbon and nitrogen source, oxygen, temperature and pH in bacteria nano-selenium production, and molecular mechanisms of nano-selenium reduced by bacteria.

Quantitative analysis of supported membrane composition using the NanoSIMS

Energy Technology Data Exchange (ETDEWEB)

Kraft, M L; Fishel, S F; Marxer, C G; Weber, P K; Hutcheon, I D; Boxer, S G

2009-06-02

We have improved methods reported earlier [1] for sample preparation, imaging and quantifying components in supported lipid bilayers using high-resolution secondary ion mass spectrometry performed with the NanoSIMS 50. By selectively incorporating a unique stable isotope into each component of interest, a component-specific image is generated from the location and intensity of the unique secondary ion signals exclusively produced by each molecule. Homogeneous supported lipid bilayers that systematically varied in their isotopic enrichment levels were freeze-dried and analyzed with the NanoSIMS 50. The molecule-specific secondary ion signal intensities had an excellent linear correlation to the isotopically labeled lipid content. Statistically indistinguishable calibration curves were obtained using different sample sets analyzed months apart. Fluid bilayers can be patterned using lithographic methods and the composition of each corralled region varied systematically by simple microfluidic methods. The resulting composition variations can be imaged and quantified. This approach opens the possibility of imaging and quantifying the composition of microdomains within membranes, including protein components, without using bulky labels and with very high lateral resolution and sensitivity.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

Science.gov (United States)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Metal Oxide Nano structures: Synthesis, Properties, and Applications

International Nuclear Information System (INIS)

Xu, L. H.; Patil, D. S.; Yang, J.; Xiao, J.

2015-01-01

In recent years, nano structured materials have attracted wide attention due to their fascinating optical and electrical properties, which make these materials potentially suitable for applications in electronics, optics, photonics, and sensors. Some metal oxides show a wide variety of morphologies such as nano wires, nano rods, nano tubes, nano rings, and nano belts. Synthesis and investigation of these metal-oxide nano structures are beneficial not only for understanding the fundamental phenomena in low dimensional systems, but also for developing new-generation nano devices with high performance.

Nano-JASMINE Data Analysis and Publication

Science.gov (United States)

Yamada, Y.; Hara, T.; Yoshioka, S.; Kobayashi, Y.; Gouda, N.; Miyashita, H.; Hatsutori, Y.; Lammers, U.; Michalik, D.

2012-09-01

The core data reduction for the Nano-JASMINE mission is planned to be done with Gaia's Astrometric Global Iterative Solution (AGIS). A collaboration between the Gaia AGIS and Nano-JASMINE teams on the Nano-JASMINE data reduction started in 2007. The Nano-JASMINE team writes codes to generate AGIS input, and this is called Initial Data Treament (IDT). Identification of observed stars and their observed field of view, getting color index, are different from those of Gaia because Nano-JASMINE is ultra small satellite. For converting centroiding results on detector to the celestial sphere, orbit and attitude data of the satellite are used. In Nano-JASMINE, orbit information is derived from on board GPS data and attitude is processed from on-board star sensor data and on-ground Kalman filtering. We also show the Nano-JASMINE goals, status of the data publications and utilizations, and introduce the next Japanese space astrometric mission.

Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

1991-10-01

The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

Frontiers in nano-therapeutics

CERN Document Server

Tasnim, Nishat; Sai Krishna, Katla; Kalagara, Sudhakar; Narayan, Mahesh; Noveron, Juan C; Joddar, Binata

2017-01-01

This brief highlights recent research advances in the area of nano-therapeutics. Nanotechnology holds immense potential for application in a wide range of biological and engineering applications such as molecular sensors for disease diagnosis, therapeutic agents for the treatment of diseases, a vehicle for delivering therapeutics and imaging agents for theranostic applications, both in-vitro and in-vivo. The brief is grouped into the following sections namely, A) Discrete Nanosystems ; B) Anisotropic Nanoparticles; C) Nano-films/coated/layered and D) Nano-composites.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

Science.gov (United States)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Porous Nano-Si/Carbon Derived from Zeolitic Imidazolate Frameworks@Nano-Si as Anode Materials for Lithium-Ion Batteries

International Nuclear Information System (INIS)

Song, Yonghai; Zuo, Li; Chen, Shouhui; Wu, Jiafeng; Hou, Haoqing; Wang, Li

2015-01-01

Graphical abstract: Display Omitted -- Highlights: •The porous cage-like carbon/Si nanocomposites were synthesized based on nano-Si@ZIF-8-templatedmethod. •The nano-Si was uniformly embedded in porous amorphous carbon matrices. •The porous dodecahedral carbon framework effectively accommodates the volume variation of Si during the discharge/charge process. •The Si/C nanocomposites exhibit superior reversible capacity of 1168 mA h g −1 after 100 cycles. -- Abstract: Novel porous cage-like carbon (C)/nano-Si nanocomposites as anode materials for lithium-ion batteries (LIBs) was prepared based on nano-Si@zeolitic imidazolate frameworks (ZIF-8)-templated method. In this strategy, p-aminobenzoic acid was initially grafted onto nano-Si to form benzoic acid-functionalized nano-Si, and then nano-Si@ZIF-8 was constructed by alternately growing Zn(NO 3 ) 2 ·6H 2 O and 2-methylimidazolate on benzoic acid-functionalized nano-Si under ultrasound. The novel porous cage-like nano-Si/C nanocomposites were fabricated by pyrolyzing the resulted nano-Si@ZIF-8 and washing with HCl to remove off ZnO. Scanning electron microscopy, transmission electron microscopy, X-ray powder diffraction, Raman spectra and N 2 adsorption/desorption isotherms were employed to characterize the porous cage-like nano-Si/C nanocomposites. The resulted nano-Si/C nanocomposites as anode materials for LIBs showed a high reversible capacity of ∼1168 mA h g −1 at 100 mA g −1 after 100 cycles, which was higher than many previously reported Si/C nanocomposites. The porous nanostructure, high specific surface area and good electrical conductivity of the cage-like nano-Si/C nanocomposites contributed together to the good performance for LIBs. It might open up a new way for application of silicon materials

Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

International Nuclear Information System (INIS)

Shayduk, Roman

2010-01-01

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping; Wang, Xinqiang; Wang, Tao; Tan, Chih Shan; Sheng, Bowen; Sun, Xiaoxiao; Li, Mo; Rong, Xin; Zheng, Xiantong; Chen, Zhaoying; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Zhang, Jian; Zhang, Xixiang; Shen, Bo

2017-01-01

-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N

Applications of Nano palm oil fuel ash and Nano fly ash in concrete

Science.gov (United States)

Hamada, Hussein M.; Jokhio, Gul Ahmed; Mat Yahaya, Fadzil; Humada, Ali M.

2018-04-01

This paper discusses the applications of Nano waste materials including palm oil fuel ash and fly ash in the concrete production. The implementation of nanotechnology has been instrumental in the development of significant interest among the stakeholders to improve the mechanical and chemical properties of materials involved in the production of concrete. Although many researchers have shown the potential of nanomaterials to increase strength and durability of concrete and improve its physical and chemical properties, there is still a knowledge gap regarding the preparation of Nano waste materials from agricultural waste to use as cement replacement instead of non-renewable materials. Therefore, it should be focused on to study Nano- waste materials to benefit from these characteristics during preparation of concrete mixtures. Therefore, this paper highlights the potential of waste materials in the Nano size to partially replace cement in concrete and achieve the same or better result than the traditional concrete. This paper recommends to conduct further experimental works to improve the concrete material properties by investigating the properties of waste materials in Nano size.

GaN:Co epitaxial layers grown by MOVPE

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

2015-01-01

Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

Probabilistic environmental risk assessment of five nanomaterials (nano-TiO2, nano-Ag, nano-ZnO, CNT, and fullerenes).

Science.gov (United States)

Coll, Claudia; Notter, Dominic; Gottschalk, Fadri; Sun, Tianyin; Som, Claudia; Nowack, Bernd

2016-01-01

The environmental risks of five engineered nanomaterials (nano-TiO2, nano-Ag, nano-ZnO, CNT, and fullerenes) were quantified in water, soils, and sediments using probabilistic Species Sensitivity Distributions (pSSDs) and probabilistic predicted environmental concentrations (PECs). For water and soil, enough ecotoxicological endpoints were found for a full risk characterization (between 17 and 73 data points per nanomaterial for water and between 4 and 20 for soil) whereas for sediments, the data availability was not sufficient. Predicted No Effect Concentrations (PNECs) were obtained from the pSSD and used to calculate risk characterization ratios (PEC/PNEC). For most materials and environmental compartments, exposure and effect concentrations were separated by several orders of magnitude. Nano-ZnO in freshwaters and nano-TiO2 in soils were the combinations where the risk characterization ratio was closest to one, meaning that these are compartment/ENM combinations to be studied in more depth with the highest priority. The probabilistic risk quantification allows us to consider the large variability of observed effects in different ecotoxicological studies and the uncertainty in modeled exposure concentrations. The risk characterization results presented in this work allows for a more focused investigation of environmental risks of nanomaterials by consideration of material/compartment combinations where the highest probability for effects with predicted environmental concentrations is likely.

NanoChemistry Group at DTU uses NanoSight's NTA System for Nanoparticle Characterization

DEFF Research Database (Denmark)

2011-01-01

(Nanowerk News) NanoSight, leading manufacturers of unique nanoparticle characterization technology, describes how the Nano Chemistry group at DTU Copenhagen is utilizing nanoparticle tracking analysis, NTA, in its research and teaching programs....

Rapid fabrication of an ordered nano-dot array by the combination of nano-plastic forming and annealing methods

International Nuclear Information System (INIS)

Yoshino, Masahiko; Ohsawa, Hiroki; Yamanaka, Akinori

2011-01-01

In this paper, a new fabrication method for an ordered nano-dot array is developed. Combination of coating, nano-plastic forming and annealing processes is studied to produce uniformly sized and ordered gold nano-dot array on a quartz glass substrate. The experimental results reveal that patterning of a groove grid on the gold-coated substrate with NPF is effective to obtain the ordered gold nano-dot array. In the proposed fabrication process, the size of the gold nano-dot can be controlled by adjusting the groove grid size. A minimum gold nano-dot array fabricated on a quartz-glass substrate was 93 nm in diameter and 100 nm in pitch. Furthermore, the mechanism of nano-dot array generation by the presented process is investigated. Using a theoretical model it is revealed that the proposed method is capable of fabrication of smaller nano-dots than 10 nm by controlling process conditions adequately.

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

International Nuclear Information System (INIS)

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

2006-01-01

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

Epitaxial lift-off for solid-state cavity quantum electrodynamics

International Nuclear Information System (INIS)

Greuter, Lukas; Najer, Daniel; Kuhlmann, Andreas V.; Starosielec, Sebastian; Warburton, Richard J.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.

2015-01-01

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime

InGaN compositional patterning by ultraviolet photoexcitation during NH3-based MOMBE - A pathway to 3D epitaxy

International Nuclear Information System (INIS)

Pritchett, D.; Henderson, W.; Billingsley, D.; Doolittle, W.A.

2008-01-01

Lateral compositional patterning of InGaN during NH 3 -based MOMBE by digital micromirror patterning of UV photoexcitation is demonstrated. Preferential desorption of In/In-methyl species during InGaN surface exposure to an elliptically focused 5 kW Hg-Xe arc lamp (λ=365 nm) limits the incorporation of indium during growth. Localized photoexcitation results in the preferential In/In-methyl desorption, resulting in indium mole fractions of 0.10 in unexposed regions to as low as 0 in fully exposed regions. The technique demonstrates promise for integration of micromirrors for dynamic and maskless selective epitaxy towards the realization of complex, 3D device structures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effect of brushing with nano calcium carbonate and calcium carbonate toothpaste on the surface roughness of nano-ionomer

Science.gov (United States)

Anisja, D. H.; Indrani, D. J.; Herda, E.

2017-08-01

Nanotechnology developments in dentistry have resulted in the development of nano-ionomer, a new restorative material. The surface roughness of restorative materials can increase bacteria adhesion and lead to poor oral hygiene. Abrasive agents in toothpaste can alter tooth and restorative material surfaces. The aim of this study is to identify the effect of brushing with nano calcium carbonate, and calcium carbonate toothpaste on surface roughness of nano-ionomer. Eighteen nano-ionomer specimens were brushed with Aquabidest (doubledistilled water), nano calcium carbonate and calcium carbonate toothpaste. Brushing lasted 30 minutes, and the roughness value (Ra) was measured after each 10 minute segment using a surface roughness tester. The data was analyzed using repeated ANOVA and one-way ANOVA test. The value of nano-ionomer surface roughness increased significantly (p<0.05) after 20 minutes of brushing with the nano calcium carbonate toothpaste. Brushing with calcium carbonate toothpaste leaves nano-ionomer surfaces more rugged than brushing with nano calcium carbonate toothpaste.

Nano dots and nano crystals detectors applications and questions

International Nuclear Information System (INIS)

Paltiel, Y.; Shusterman, S.; Naaman, R.; Aqua, T.; Banin, U.; Aharoni, A.

2006-01-01

Full Text: Nano technology is in the center of attention in the last decade. In our work we are using nano dots, nano crystals and quantum wells to study and fabricate infrared devices. In this study we aim to develop an accurate narrow band infrared sensor that will use quantum mechanics at room temperature. The sensor is based on a FET like structure, in which the current is very sensitive to potential changes on its surface. We have shown that this configuration provides flexibility and variability in operation bandgap and response. However, the relations between the quantum and the macroscopic world are not trivial and the coupling between worlds influences the transport, noise, and optical measurements. In this talk we will show some of the infrared devices we are studying, and try to present the rich physics and relations that combine between the two worlds

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Epitaxial growth on porous GaAs substrates

Czech Academy of Sciences Publication Activity Database

Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

2013-01-01

Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

Novel plasmon nano-lasers

NARCIS (Netherlands)

Hill, M.T.; Marell, M.J.H.

2010-01-01

We will discuss some of the latest developments in metallic and plasmonic nano-lasers. Furthermore we will present our latest results on further miniaturization of electrically pumped plasmonic nano-lasers and also DFB Plasmon mode devices.

Preparation and characterization of bipolar membranes modified by photocatalyst nano-ZnO and nano-CeO2

International Nuclear Information System (INIS)

Zhou Tingjin; Hu Yanyu; Chen Riyao; Zheng Xi; Chen Xiao; Chen Zhen; Zhong Jieqiong

2012-01-01

Nano-ZnO-CeO 2 coupled semiconductor was added into the chitosan (CS) anion exchange membrane layer to prepare the PVA-CMC/nano-ZnO-CeO 2 -CS (here, PVA: polyvinyl alcohol; CMC: carboxymethyl cellulose) bipolar membrane (BPM), and the prepared BPM was characterized by SEM, J-V characteristics, electronic universal testing machine, contact angle measurement and so on. Experimental results showed that nano-ZnO-CeO 2 exhibited better photocatalytic property for water splitting at the interlayer of BPM than nano-ZnO or nano-CeO 2 , which could greatly reduce the membrane impedance of the BPM. Under the irradiation of high-pressure mercury lamps, the cell voltage of PVA-CMC/nano-ZnO-CeO 2 -CS BPM decreased by 0.7 V at the current density of 60 mA/cm 2 , and the cell voltages of PVA-CMC/nano-ZnO-CS BPM and PVA-CMC/nano-CeO 2 -CS BPM were only reduced by 0.3 V and 0.5 V, respectively. Furthermore, the hydrophilicity, and mechanical properties of the modified BPM were increased.

The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

Science.gov (United States)

Ye, Ning

Understanding heat transport at nanometer and sub-nanometer lengthscales is critical to solving a wide range of technological challenges related to thermal management and energy conversion. In particular, finite Interfacial Thermal Conductance (ITC) often dominates transport whenever multiple interfaces are closely spaced together or when heat originates from sources that are highly confined by interfaces. Examples of the former include superlattices, thin films, quantum cascade lasers, and high density nanocomposites. Examples of the latter include FinFET transistors, phase-change memory, and the plasmonic transducer of a heat-assisted magnetic recording head. An understanding of the physics of such interfaces is still lacking, in part because experimental investigations to-date have not bothered to carefully control the structure of interfaces studied, and also because the most advanced theories have not been compared to the most robust experimental data. This thesis aims to resolve this by investigating ITC between a range of clean and structurally well-characterized metal-semiconductor interfaces using the Time-Domain Thermoreflectance (TDTR) experimental technique, and by providing theoretical/computational comparisons to the experimental data where possible. By studying the interfaces between a variety of materials systems, each with unique aspects to their tunability, I have been able to answer a number of outstanding questions regarding the importance of interfacial quality (epitaxial/non-epitaxial interfaces), semiconductor doping, matching of acoustic and optical phonon band structure, and the role of phonon transport mechanisms apart from direct elastic transmission on ITC. In particular, we are able to comment on the suitability of the diffuse mismatch model (DMM) to describe the transport across epitaxial interfaces. To accomplish this goal, I studied interfacial thermal transport across CoSi2, TiSi2, NiSi and PtSi - Si(100) and Si(111), (silicides

Bi-epitaxial tilted out-of-plane YBCO junctions on NdGaO{sub 3} substrates with YSZ seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Benacka, S.; Strbik, V. (Institute of Electrical Engineering SAS, Bratislava (SK))

2008-10-15

Bi-epitaxial junctions with out-of plane tilt of the c axis were fabricated of YBCO superconducting thin films on NdGaO{sub 3} substrates with different miscut angles. Bi-epitaxial growth was provided by implementation of an Y:ZrO{sub 2} seeding layer on a certain part of the substrate. Junctions with different orientation of the bi-epitaxial boundaries were fabricated, their DC electrical properties were studied as a function of the boundary orientation angle. The junctions showed extremely high critical current densities for all tested miscut angles and bi-epitaxial boundary orientations (about 105 A/cm2 at 77 K and up to 106 A/cm2 at 4.2 K). The dependence of critical current density on the bi-epitaxial boundary orientation angle may be explained as an effect of a d-wave pairing mechanism in the HTSC with the simple Sigrist-Rice model. The studied boundaries may be considered as model structures for the grain boundaries in the coated conductors. (au)

Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

2007-01-01

Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

Applications and Nano toxicity of Carbon Nano tubes and Graphene in Biomedicine Caitlin Fisher

International Nuclear Information System (INIS)

Rider, A.E.; Han, Z.J.; Kumar, S.; Levchenko, L.; Ostrikov, K.K.

2012-01-01

Owing to their unique mechanical, electrical, optical, and thermal properties, carbon nano structures including carbon nano tubes and graphenes show great promise for advancing the fields of biology and medicine. Many reports have demonstrated the promise of these carbon nano structures and their hybrid structures (composites with polymers, ceramics, and metal nanoparticles, etc.) for a variety of biomedical areas ranging from bio sensing, drug delivery, and diagnostics, to cancer treatment, tissue engineering, and bio terrorism prevention. However, the issue of the safety and toxicity of these carbon nano structures, which is vital to their use as diagnostic and therapeutic tools in biomedical fields, has not been completely resolved. This paper aims to provide a summary of the features of carbon nano tube and graphene-based materials and current research progress in biomedical applications. We also highlight the current opinions within the scientific community on the toxicity and safety of these carbon structures

The Degradation of Mechanical Properties in Halloysite Nano clay-Polyester Nano composites Exposed in Seawater Environment

International Nuclear Information System (INIS)

Saharudin, M.S.; Saharudin, M. Sh.; Wei, J.; Shyha, I.; Inam, F.

2016-01-01

Polyester based polymers are extensively used in aggressive marine environments; however, inadequate data is available on the effects of the seawater on the polyester based nano composites mechanical properties. This paper reports the effect of seawater absorption on the mechanical properties degradation of halloysite nano clay-polyester nano composites. Results confirmed that the addition of halloysite nano clay into polyester matrix was found to increase seawater uptake and reduce mechanical properties compared to monolithic polyester. The maximum decreases in microhardness, tensile and flexural properties, and impact toughness were observed in case of 1 wt% nano clay. The microhardness decreased from 107 HV to 41.7 HV (61% decrease). Young s modulus decreased from 0.6 GPa to 0.4 GPa (33% decrease). The flexural modulus decreased from 0.6 GPa to 0.34 GPa (43% decrease). The impact toughness dropped from 0.71 kJ/m"2 to 0.48 kJ/m"2 (32% decrease). Interestingly, the fracture toughnessκ_1C increased with the addition of halloysite nano clay due to the plasticization effect of the resin matrix. SEM images revealed the significant reduction in mechanical properties in case of 1 wt% reinforcement which is attributed to the degradation of the nano clay-matrix interface influenced by seawater absorption and agglomeration of halloysite nano clay.

Applications of Nano-optics.

Science.gov (United States)

Zhou, Changhe; Fainman, Yeshaiahu; Sheng, Yunlong

2011-11-01

As nanoscale fabrication techniques advance, nano-optics continues to offer enabling solutions to numerous practical applications for information optics. This Applied Optics feature issue focuses on the Application of Nano-optics. © 2011 Optical Society of America

Nano materials for Medical and Dental Applications

International Nuclear Information System (INIS)

Yub Kwon, T.; Oh, D.S.; Narayanan, R.

2015-01-01

Welcome to this special issue. Nano science and nano technology concepts are applicable across all fields of science and a more widespread application of nano materials and nano technologies is imminent or already occurring in many areas, including health care. Today is scientists take those cutting-edge technologies and concepts and apply them to medicine and dentistry. They are finding a wide variety of ways to make medical and dental materials at the nano scale to take advantage of their enhanced physical and biological properties.The purpose of this special issue is to publish high-quality research papers as well as review articles addressing recent advances in the field of nano materials for medical and dental applications. A particular interest is given to papers exploring or discussing nano materials and nano technologies related to delivery system, bonding substitutes, and surface modification techniques applicable in these areas. For this special issue, several investigators were invited to contribute original research findings that can stimulate continuing efforts to understand the cutting-edge applications of nano materials in medicine and dentistry.

Strain-induced properties of epitaxial VOx thin films

NARCIS (Netherlands)

Rata, AD; Hibma, T

We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

A novel approach to nano topology via neutrosophic sets

OpenAIRE

M. Lellis Thivagar; Saeid Jafari; V. Sutha Devi; V. Antonysamy

2018-01-01

The main objective of this study is to introduce a new hybrid intelligent structure called Neutrosophic nano topology. Fuzzy nano topology and intuitionistic nano topology can also be deduced from the neutrosophic nano topology. Based on the neutrosophic nano approximations we have classified neutrosophic nano topology. Some properties like neutrosophic nano interior and neutrosophic nano closure are derived.

PREFACE: Nano- and microfluidics Nano- and microfluidics

Science.gov (United States)

Jacobs, Karin

2011-05-01

The field of nano- and microfluidics emerged at the end of the 1990s parallel to the demand for smaller and smaller containers and channels for chemical, biochemical and medical applications such as blood and DNS analysis [1], gene sequencing or proteomics [2, 3]. Since then, new journals and conferences have been launched and meanwhile, about two decades later, a variety of microfluidic applications are on the market. Briefly, 'the small flow becomes mainstream' [4]. Nevertheless, research in nano- and microfluidics is more than downsizing the spatial dimensions. For liquids on the nanoscale, surface and interface phenomena grow in importance and may even dominate the behavior in some systems. The studies collected in this special issue all concentrate on these type of systems and were part ot the priority programme SPP1164 'Nano- and Microfluidics' of the German Science Foundation (Deutsche Forschungsgemeinschaft, DFG). The priority programme was initiated in 2002 by Hendrik Kuhlmann and myself and was launched in 2004. Friction between a moving liquid and a solid wall may, for instance, play an important role so that the usual assumption of a no-slip boundary condition is no longer valid. Likewise, the dynamic deformations of soft objects like polymers, vesicles or capsules in flow arise from the subtle interplay between the (visco-)elasticity of the object and the viscous stresses in the surrounding fluid and, potentially, the presence of structures confining the flow like channels. Consequently, new theories were developed ( see articles in this issue by Münch and Wagner, Falk and Mecke, Bonthuis et al, Finken et al, Almenar and Rauscher, Straube) and experiments were set up to unambiguously demonstrate deviations from bulk, or 'macro', behavior (see articles in this issue by Wolff et al, Vinogradova and Belyaev, Hahn et al, Seemann et al, Grüner and Huber, Müller-Buschbaum et al, Gutsche et al, Braunmüller et al, Laube et al, Brücker, Nottebrock et al

Mass transfer in nano-fluids: A review

International Nuclear Information System (INIS)

Ashrafmansouri, Seyedeh-Saba; Esfahany, Mohsen Nasr

2014-01-01

Growing attention has been recently paid to nano-fluids because of their potential for augmenting transfer processes - i.e., heat and mass transfer. Conflicting results have been reported in the literature on mass transfer in nano-fluids. The aim of this paper is to summarize the literature on mass transfer in nano-fluids stating the conflicts and possible reasons. Literature on mass transfer in nano-fluids has been reviewed in two sections. The first section concentrates on surveying mass diffusivity in nano-fluids while the second section focuses on convective mass transfer in nano-fluids. In each section, published articles, type of nano-fluids used, size and concentration range of nanoparticles, measurement methods, maximum observed enhancement, and suggested mass transport mechanisms are summarized. (authors)

Epitaxial hexagonal materials on IBAD-textured substrates

Energy Technology Data Exchange (ETDEWEB)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Spin-accumulation effect in magnetic nano-bridge

International Nuclear Information System (INIS)

Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

2004-01-01

Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

Nano catalysis: Academic Discipline and Industrial Realities

International Nuclear Information System (INIS)

Olveira, S.; Forster, S.P.; Seeger, S.

2014-01-01

Nano technology plays a central role in both academic research and industrial applications. Nano enabled products are not only found in consumer markets, but also importantly in business to business markets (B2B). One of the oldest application areas of nano technology is nano catalysis—an excellent example for such a B2 B market. Several existing reviews illustrate the scientific developments in the field of nano catalysis. The goal of the present review is to provide an up-to-date picture of academic research and to extend this picture by an industrial and economic perspective. We therefore conducted an extensive search on several scientific databases and we further analyzed more than 1,500 nano catalysis-related patents and numerous market studies. We found that scientists today are able to prepare nano catalysts with superior characteristics regarding activity, selectivity, durability, and recoverability, which will contribute to solve current environmental, social, and industrial problems. In industry, the potential of nano catalysis is recognized, clearly reflected by the increasing number of nano catalysis-related patents and products on the market. The current nano catalysis research in academic and industrial laboratories will therefore enable a wealth of future applications in the industry

Editorial Nano structures for Medicine and Pharmaceuticals

International Nuclear Information System (INIS)

Xing-Jie, L.; Kumar, A.; Donglu, S.; Daxiang, C.

2012-01-01

The rapid developments in nano structured materials and nano technology will have profound impact in many areas of biomedical applications including delivery of drugs and biomolecules, tissue engineering, detection of bio markers, cancer diagnosis, cancer therapy, and imaging. This field is expanding quickly, and a lot of work is ongoing in the design, characterization, synthesis, and application of materials, for controlling shape and size at nanometer scale to develop highly advanced materials for biomedical application and even to design better pharmaceutical products. In recent years, novel nano structure with multi functionalities has been focused on the use of nano structures toward solving problems of biology and medicine. The main scope of this special issue is to demonstrate the latest achievement of nano technology and its application in nano medicine particularly in new approaches for drug delivery such as targeted drug delivery system, nano structure for drug storage, nano materials for tissue engineering, medical diagnosis and treatment, and generation of new kinds of materials from biological sources. Therefore, many critical issues in nano structured materials, particularly their applications in biomedicine, must be addressed before clinical applications. This special issue devotes several review and research articles encompassing various aspects of nano materials for medicine and pharmaceuticals.

The nano-science of C60 molecule

International Nuclear Information System (INIS)

Rafii-Tabar, H.

2002-01-01

Over the past few years, nano-science and its associated nano-technology have emerged into prominence in research institutions across the world. They have brought about new scientific and engineering paradigms, allowing for the manipulation of single atoms and molecules, designing and fabricating new materials, atom-by-atom, and devices that operate on significantly reduced time and length scales. One important area of research in nano-science and nano technology is carbon-based physics in the form of fullerene physics. The C 6 0 molecule, and other cage-like fullerenes, together with carbon nano tubes provide objects that can be combined to generate three-dimensional functional structures for use in the anticipated nano-technology of future. The unique properties of C 6 0 can also be exploited in designing nano-phase thin films with applications in nano-scope device technology and processes such as nano-lithography. This requires a deep understanding of the highly complex process of adsorption of this molecule on a variety of substrates. We review the field of nano-scale nucleation and growth of C 6 0 molecules on some of the technologically important substrates. In addition to experimental results, the results of a set of highly accurate computational simulations are also reported

Study the scratch resistance of UV-cured epoxy acrylate in the presence of nano alumina particles via nano indentation

International Nuclear Information System (INIS)

Bastani, S.; Ebrahimi, M.; Kardar, P.

2007-01-01

In this research, an epoxy acrylate resin was synthesized, then the synthesized resin was used along with different multifunctional acrylate monomers and with a photoinitiator in different formulations and cured with UV radiation. The experiments were designed based on mixture method by using Design-Expert software. To investigate the effect of nano particles on the some of physical and mechanical properties of the UV cured resins, the suspension of nano alumina in TPGDA, was used in formulations. The hardness of prepared films was evaluated by using konig hardness tester and nano indentater. The scratch resistance and gloss of the films were also determined. The results showed that the visibility of scratch decreased when the nano particles were used. It seems that the self-healing property of the film improved in the presence of nano particles. The hardness of the samples with nano particles was found to be less than that the samples of without any nano particles. It was observed that the gloss of the films with the nano particles, almost was the same as the film without nano particles. (Author)

Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

International Nuclear Information System (INIS)

Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

2004-01-01

Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

Nano Surface Engineering in the 21st Century

Institute of Scientific and Technical Information of China (English)

Xu Bin-shi; Wang Hai-dou; Dong Shi-yun; Shi Pei-jing; Xu Yi

2004-01-01

Nano surface engineering is the new development of surface engineering, and is the typical representation that the advanced nano technology improves the traditional surface engineering. The connotation of nano surface engineering is profound. The initial stage of nano surface engineering is realized at present day. The key technologies of nano surface engineering are the support to the equipment remanufacturing. Today the relatively mature key technologies are: nano thermal spraying technology, nano electric-brush plating technology, nano self-repairing anti-friction technology and metal surface nanocrystallization, etc. Many scientific issues have been continuously discovered. Meanwhile they have been applied in the practice more and more, and have archived the excellent remanufacturing effect.

Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

Energy Technology Data Exchange (ETDEWEB)

Rozhavskaya, M. M., E-mail: MRozhavskaya@gmail.com; Lundin, V. V.; Zavarin, E. E.; Troshkov, S. I.; Brunkov, P. N.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-03-15

The influence of the carrier gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in stripe windows oriented along the crystallographic direction Left-Pointing-Angle-Bracket 11-bar00 Right-Pointing-Angle-Bracket GaN for various widths of the mask between the stripes is studied. It is shown that the addition of nitrogen in the reactor atmosphere leads to changes in the form of the stripes in the case of wide (40 {mu}m) mask from a rectangular form restricted by a {l_brace}1 1-bar20{r_brace} lateral face to a trapezoidal form restricted by a {l_brace}1 1-bar22{r_brace} lateral face. It is also shown that during growth in the nitrogen-hydrogen mixture, the gallium flow starts to considerably affect the form of the growing stripes. It is shown that the process is significantly unstable, which leads to a noticeable variation in the form type as the transverse section of the stripe increases.

Nano-structural characteristics and optical properties of silver chiral nano-flower sculptured thin films

Energy Technology Data Exchange (ETDEWEB)

Savaloni, Hadi, E-mail: savaloni@khayam.ut.ac.ir [Department of Physics, University of Tehran, North-Kargar Street, Tehran (Iran, Islamic Republic of); Haydari-Nasab, Fatemh; Malmir, Mariam [Department of Physics, University of Tehran, North-Kargar Street, Tehran (Iran, Islamic Republic of)

2011-08-15

Silver chiral nano-flowers with 3-, 4- and 5-fold symmetry were produced using oblique angle deposition method in conjunction with the rotation of sample holder with different speeds at different sectors of each revolution corresponding to symmetry order of the acquired nano-flower. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), were employed to obtain morphology and nano-structure of the films. Optical characteristics of silver chiral nano-flower thin films were obtained using single beam spectrophotometer with both s- and p-polarization incident light at 30{sup o} and 70{sup o} incidence angles and at different azimuthal angles ({phi}). Optical spectra showed both TM (TDM (transverse dipole mode) and TQM (transverse quadruple mode)) and LM (longitudinal mode) Plasmon resonance peaks. For 3- and 4-fold symmetry chiral nano-flowers the s-polarization extinction spectra obtained at different azimuthal angles did not show significant change in the Plasmon peak position while 5-fold symmetry chiral nano-flower showed a completely different behavior, which may be the result of increased surface anisotropy, so when the {phi} angle is changed the s-polarization response from the surface can change more significantly than that for lower symmetries. In general, for 3-, 4- and 5-fold symmetry chiral nano-flowers a sharp peak at lower wavelengths (<450 nm) is observed in the s-polarization spectra, while in addition to this peak a broad peak at longer wavelengths (i.e., LM) observed in the p-polarization spectra, which is more dominant for 70{sup o} incidence angle.

Label it or ban it? Public perceptions of nano-food labels and propositions for banning nano-food applications

Science.gov (United States)

Chuah, Agnes S. F.; Leong, Alisius D.; Cummings, Christopher L.; Ho, Shirley S.

2018-02-01

The future of nano-food largely hinges on public perceptions and willingness to accept this novel technology. The present study utilizes the scientific literacy model and psychometric paradigm as the key theoretical frameworks to examine the factors influencing public support for labeling and banning of nano-food in Singapore. Using data collected from a nationally representative survey of 1001 respondents, the findings demonstrated that attitudes toward technology, preference for natural product, science knowledge, and risk perception were found to substantially affect public support for both labeling and banning of nano-food. Conversely, attention to food safety news on traditional media and attention to nano-news on new media were only associated with public support for labeling of nano-food. Similarly, benefit perception was only significantly associated with public support for banning of nano-food. Theoretically, these findings support the growing body of literature that argues for the significant role played by predispositions, media use, science knowledge, and risk and benefit perceptions on attitude formation toward nano-food. It serves as the pioneering piece to address the aspect of banning in the field of nano-food. Practically, insights drawn from this study could aid relevant stakeholders in enlisting effecting strategies to convey the benefits of nano-food while mitigating the risk perceptions among the public.

From Nano Structure to Systems: Fabrication and Characterization

International Nuclear Information System (INIS)

Uda Hashim

2011-01-01

Currently, the interest in nano technology research has been grown rapidly. With the latest technology, it is possible to arrange atoms into structures that are only a few nanometers in size. Dimension for nano structure is between 0.1 and 100nm where the actual size of 1nm is equal to 10-9 m or just about a few atoms thick. In other word, a nano structure is an object which it size is about four atom diameters or 1/50000 of a human hair. Due to the connecting of a patterned silicon substrate with biomolecules and the small size and large surface-to-volume ratio, it opens much new possibility for assembling nano structures.The ultimate goal is to fabricate devices that have every atom in the right place. Such technology would give the opportunity to minimize the size of a device and to reduce the material, energy and time necessary to perform its task. Potential applications include electrical circuits, mechanical devices and medical instruments. There are two most important nano structures that are extensively studied and researched in various organizations which are nano wire and nano gap. Nano wires is a new class of nano structure that have attracted attention and great research interest in the last few years because of their potential applications in nano technology such as nano electronic, nano mechanical and biomedical engineering. Fabrication of Nano wires is one of the great challenges today. Conventional lithography methods are not capable to produce Nano wires and even with advance nano lithography sizes below 100 nm may not easily be achieved. Nano wire can be produced in two approaches, which are top down and bottom-up method. Very small nano wires which can be produced by using top-down nano fabrication methods are Scanning Electron Microscope (SEM) based Electron Beam Lithography (EBL) method, and Spacer Patterning Lithography (SPL) method. The top-down nano fabrication method based on EBL was the design of the Nano wires Pattern Design (NPD). The

Electrical properties of epitaxially grown VOx thin films

NARCIS (Netherlands)

Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

2003-01-01

High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

Selenidation of epitaxial silicene on ZrB2

NARCIS (Netherlands)

Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

2018-01-01

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ±

Fabrication of Nano-CeO2 and Application of Nano-CeO2 in Fe Matrix Composites

International Nuclear Information System (INIS)

Tiebao, W.; Chunxiang, C.; Xiaodong, W.; Guobin, L.

2010-01-01

It is expatiated that nano-CeO2 is fabricated by the direct sedimentation method. The components and particles diameter of nano-CeO2 powders are analyzed by XRD and SEM . The thermodynamic analysis and acting mechanism of nano-CeO2 with Al in Fe matrix composites are researched, which shows that the reaction is generated between CeO2 and Al in the composite, that is, 3CeO2+4Al - 2Al2O3+3[Ce], which obtains Al2O3 and active [Ce] during the sintering process. The active [Ce] can improve the performance of CeO2/Fe matrix composites. The suitable amount of CeO2 is about 0.05% in CeO2/Fe matrix composites. SEM fracture analysis shows that the toughness sockets in nano-CeO2/Fe matrix composites are more than those in no-added nano-CeO2 composites, which can explain that adding nano-CeO2 into Fe matrix composite, the toughness of the composite is improved significantly. Applied nano-CeO2 to Fe matrix diamond saw blades shows that Fe matrix diamond saw blade is sharper and of longer cutting life than that with no-added nano-CeO2.

Size-dependent nonlinear bending of micro/nano-beams made of nanoporous biomaterials including a refined truncated cube cell

Science.gov (United States)

Sahmani, S.; Aghdam, M. M.

2017-12-01

Morphology and pore size plays an essential role in the mechanical properties as well as the associated biological capability of a porous structure made of biomaterials. The objective of the current study is to predict the Young's modulus and Poisson's ratio of nanoporous biomaterials including refined truncated cube cells based on a hyperbolic shear deformable beam model. Analytical relationships for the mechanical properties of nanoporous biomaterials are given as a function of the refined cell's dimensions. After that, the size dependency in the nonlinear bending behavior of micro/nano-beams made of such nanoporous biomaterials is analyzed using the nonlocal strain gradient elasticity theory. It is assumed that the micro/nano-beam has one movable end under axial compression in conjunction with a uniform distributed lateral load. The Galerkin method together with an improved perturbation technique is employed to propose explicit analytical expression for nonlocal strain gradient load-deflection curves of the micro/nano-beams made of nanoporous biomaterials subjected to uniform transverse distributed load. It is found that through increment of the pore size, the micro/nano-beam will undergo much more deflection corresponding to a specific distributed load due to the reduction in the stiffness of nanoporous biomaterial. This pattern is more prominent for lower value of applied axial compressive load at the free end of micro/nano-beam.

Reactive oxygen species-related activities of nano-iron metal and nano-iron oxides.

Science.gov (United States)

Wu, Haohao; Yin, Jun-Jie; Wamer, Wayne G; Zeng, Mingyong; Lo, Y Martin

2014-03-01

Nano-iron metal and nano-iron oxides are among the most widely used engineered and naturally occurring nanostructures, and the increasing incidence of biological exposure to these nanostructures has raised concerns about their biotoxicity. Reactive oxygen species (ROS)-induced oxidative stress is one of the most accepted toxic mechanisms and, in the past decades, considerable efforts have been made to investigate the ROS-related activities of iron nanostructures. In this review, we summarize activities of nano-iron metal and nano-iron oxides in ROS-related redox processes, addressing in detail the known homogeneous and heterogeneous redox mechanisms involved in these processes, intrinsic ROS-related properties of iron nanostructures (chemical composition, particle size, and crystalline phase), and ROS-related bio-microenvironmental factors, including physiological pH and buffers, biogenic reducing agents, and other organic substances. Copyright © 2014. Published by Elsevier B.V.

Liquid-phase epitaxy of InGaAsP solid solutions on profiled substrates of InP(100)

International Nuclear Information System (INIS)

Dvoryankin, V.F.; Kaevitser, L.R.; Komarov, A.A.; Telegin, A.A.; Khusid, L.B.; Chernushin, M.D.

1990-01-01

Peculiarities of selective growth of InGaAsP solid solutions under liquid-phase epitaxy in shallow grooves are considered. InGaAsP crystals grown in grooves oriented along crystallografic [110] and [011] directions are determined to trend to equilibrium form under two-phase epitaxy, while wedge-shaped form of In 0.77 Ga 0.23 As 0.53 P 0.45 and In 0.53 P o.45 and IN 0.59 Ga 0.41 As 0.83 P 0.12 epitaxial layers obtained in grooves is determined by their composition only and does not depend on groove configuration

Nano-sensing of the orientation of fluorescing molecules with active coated nano-particles

DEFF Research Database (Denmark)

Arslanagic, Samel; Ziolkowski, Richard W.

2015-01-01

The potential of using active coated nano-particles to determine the orientation of fluorescing molecules is reported. By treating each fluorescing molecule as an electric Hertzian dipole, single and multiple fluorescing molecules emitting coherently and incoherently in various orientations...... are considered in the presence of active coated nano-particles. It is demonstrated that in addition to offering a means to determine the orientation of a single molecule or the over-all orientation of the molecules surrounding it, the nature of the far-field response from the active coated nano...

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

Directory of Open Access Journals (Sweden)

Somaschini C

2010-01-01

Full Text Available Abstract We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental procedure that allows the fabrication of individual portions of the structure, controlling their diameter by only changing the substrate temperature. The obtained nanocrystals show a significant anisotropy between [110] and [1–10] crystallographic directions, which can be ascribed to different activation energies for the Ga atoms migration processes.

Epitaxial growth of Ge-Sb-Te based phase change materials

Energy Technology Data Exchange (ETDEWEB)

Perumal, Karthick

2013-07-30

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Nano market and analysis of technology

International Nuclear Information System (INIS)

2001-10-01

This book gives descriptions of summary of nano technology with meaning, character and field, trend of technical development in domestic, current condition of nano basic research in domestic, trend of technical development in foreign country such as summary, trend of technology by industrial field, machine and metronics, material and process, standard of nano mechanism, scale of market and trend, competitiveness of nano technology of major country and research development system in Japan, Korean company and major countries.

Control of the Nano-Particle Weight Ratio in Stainless Steel Micro and Nano Powders by Radio Frequency Plasma Treatment

Directory of Open Access Journals (Sweden)

Dong-Yeol Yang

2015-11-01

Full Text Available This study describes how to make stainless steel hybrid micro-nano-powders (a mixture of micro-powder and nano-powder using an in situ one-step process via radio frequency (RF thermal plasma treatment. Nano-particles attached to micro-powders were successfully prepared by RF thermal plasma treatment of stainless steel powder with an average size of 35 μm. The ratio of nano-powders is estimated with a two-dimensional fluid simulation that calculates the temperature profile influencing the rate of surface evaporation. The simulation is conducted to determine the variation of the input power and the distance from the plasma torch to the feeding nozzle. It was demonstrated experimentally that the nano-powder ratio in the micro-nano-powder mixture can be controlled by adjusting the feeding rate, plasma power, feeding position and quenching effect during plasma treatment. The ratio of nano-particles in the micro-nano-powder mixture was controlled in a range from 0.1 (wt. % to 30.7 (wt. %.

Design and Preparation of Nano-Lignin Peroxidase (NanoLiP by Protein Block Copolymerization Approach

Directory of Open Access Journals (Sweden)

Turgay Tay

2016-06-01

Full Text Available This study describes the preparation of nanoprotein particles having lignin peroxidase (LiP using a photosensitive microemulsion polymerization technique. The protein-based nano block polymer was synthesized by cross-linking of ligninase enzyme with ruthenium-based aminoacid monomers. This type polymerization process brought stability in different reaction conditions, reusability and functionality to the protein-based nano block polymer system when compared the traditional methods. After characterization of the prepared LiP copolymer nanoparticles, enzymatic activity studies of the nanoenzymes were carried out using tetramethylbenzidine (TMB as the substrate. The parameters such as pH, temperature and initial enzyme concentration that affect the activity, were investigated by using prepared nanoLip particles and compared to free LiP. The reusability of the nano-LiP particles was also investigated and the obtained results showed that the nano-LiP particles exhibited admirable potential as a reusable catalyst.

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

Science.gov (United States)

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)