Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Anomalous phase transition of InN nanowires under high pressure

International Nuclear Information System (INIS)

Tang Shun-Xi; Zhu Hong-Yang; Jiang Jun-Ru; Wu Xiao-Xin; Dong Yun-Xuan; Zhang Jian; Cui Qi-Liang; Yang Da-Peng

2015-01-01

Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one. (paper)

Evaluation of threading dislocation densities in In- and N-face InN

International Nuclear Information System (INIS)

Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

2010-01-01

The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

International Nuclear Information System (INIS)

Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

2012-01-01

We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE

International Nuclear Information System (INIS)

Ri-Qing, Zhang; Xiang-Lin, Liu; Ting-Ting, Kang; Wei-Guo, Hu; Shao-Yan, Yang; Chun-Mei, Jiao; Qing-Sheng, Zhu

2008-01-01

We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

International Nuclear Information System (INIS)

Miyajima, Takao; Kudo, Yoshihiro; Wakahara, Akihiro; Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi

2006-01-01

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9±0.5 and n(In)=12.4±0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In 2 O 3 , and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In 2 O 3 , and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In 2 O 3 , which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transport and mobility properties of wurtzite InN and GaN

International Nuclear Information System (INIS)

Yarar, Zeki

2007-01-01

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady-state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low-field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of M-plane (10-10)InN on LiAlO2(100) substrate

International Nuclear Information System (INIS)

Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

2009-01-01

In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2009-06-15

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-01-01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

International Nuclear Information System (INIS)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

2003-01-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

Energy Technology Data Exchange (ETDEWEB)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2003-11-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure and electronic properties of InN and In-rich group III-nitride alloys

International Nuclear Information System (INIS)

Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

2006-01-01

The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

InN grown by migration enhanced afterglow (MEAglow)

International Nuclear Information System (INIS)

Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

2012-01-01

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Yoshihiro [Materials Analysis Lab., Sony Corporation, 4-18-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Wakahara, Akihiro [Deptm. of Electrical and Electronic Engineering, Toyohashi Univ. of Tech., Toyohashi 441-8580 (Japan); Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi [Deptm. of Photonics, Ritsumeikan Univ., 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

2006-06-15

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9{+-}0.5 and n(In)=12.4{+-}0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In{sub 2}O{sub 3}, and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In{sub 2}O{sub 3}, and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In{sub 2}O{sub 3}, which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron transport in wurtzite InN

Indian Academy of Sciences (India)

InN transport; mobility; energy and momentum relaxation; impurity scattering. ... future generation solar cell because the nitride alloys can cover the whole ... We apply the ensemble Monte Carlo method to investigate the electron transport in.

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

2012-01-01

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

2007-01-01

We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Cp2Mg supply on MOVPE growth behavior of InN

International Nuclear Information System (INIS)

Sugita, K.; Sasamoto, K.; Hashimoto, A.; Yamamoto, A.

2011-01-01

This report shows the effect of Cp 2 Mg supply on MOVPE growth behavior of InN. At low growth temperature (∝600 C), the formation of adducts occurred, which degenerates the crystal quality. With increasing the growth temperature, the adduct formation was suppressed because the decomposition of Cp 2 Mg was enhanced and thus the incorporation of carbon into the film was suppressed. The use of Cp 2 Mg during InN growth increases the growth rate in the lateral direction. Non-doped InN film grown on GaN buffer has an In-face of the top side. On the other hand, the inversion domains seems to be formed in the highly Mg-doped InN. Tilt distribution decreases from 65 to 30 arcmin with the increase of Cp 2 Mg/TMI molar ratio 0 to 0.06. The donor is produced in highly Mg-doped MOVPE-grown InN (Cp 2 Mg/TMI molar ratio > 0.005). Therefore, the effect of Cp 2 Mg supply on MOVPE growth behavior of InN is found to improve a macro-scale crystal quality but also produces the donor (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

Energy Technology Data Exchange (ETDEWEB)

Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

2017-04-15

Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

Double resonance Raman effects in InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2012-04-15

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Crystallographic deterioration of MOVPE InN during the growth

International Nuclear Information System (INIS)

Sugita, K.; Nagai, Y.; Houchin, Y.; Hashimoto, A.; Yamamoto, A.

2007-01-01

This paper reports the crystallographic degradation of MOVPE InN during the growth. Using FWHMs of X-ray rocking curve, tilt ((0002)) and twist ((10-10)) angle distributions are evaluated and effects of the major growth parameters, such as growth temperature, growth time and with/without GaN buffer in the degradation, are revealed. With increasing either thickness of grown InN or growth temperature up to 600 C, the tilt angle distribution is markedly increased, indicating the crystallographic degradation of grown films. The use of a GaN buffer reduces such degradation. Since the twist angle distribution is scarcely changed by such growth parameters, the destruction of InN crystals during growth and annealing is concluded to be anisotropic. The trends of the crystallographic degradation revealed here are in good agreement with those for the electrical and optical degradation previously reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral dependence of third-order nonlinear optical properties in InN

International Nuclear Information System (INIS)

Ahn, H.; Lee, M.-T.; Chang, Y.-M.

2014-01-01

We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10 −10 cm 2 /W indicates InN as a potential material for all-optical switching and related applications

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

Science.gov (United States)

Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2010-09-01

Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

LDA+U and tight-binding electronic structure of InN nanowires

Science.gov (United States)

Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

2010-10-01

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Structure analysis of InN film using extended X-ray absorption fine structure method

Energy Technology Data Exchange (ETDEWEB)

Miyajima, T.; Kobayashi, T.; Hirata, S. [Core Technology Development Center, Core Technology and Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Y.; Liu, K.L. [Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021 (Japan); Uruga, T.; Honma, T. [Japan Synchrotron Radiation Research Institute, Mikazuki-cho, Hyogo 679-5198 (Japan); Saito, Y.; Hori, M.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2002-12-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d{sub In-N}=0.215 nm and d{sub In-In}=0.353 nm, respectively. The In-N bond length of d{sub In-In}=0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Structure analysis of InN film using extended X-ray absorption fine structure method

International Nuclear Information System (INIS)

Miyajima, T.; Kobayashi, T.; Hirata, S.; Kudo, Y.; Liu, K.L.; Uruga, T.; Honma, T.; Saito, Y.; Hori, M.; Nanishi, Y.

2002-01-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N =0.215 nm and d In-In =0.353 nm, respectively. The In-N bond length of d In-In =0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Impact of potassium and water on the electronic properties of InN(0001) surfaces

International Nuclear Information System (INIS)

Reiss, S.; Eisenhardt, A.; Krischok, S.; Himmerlich, M.

2014-01-01

In this work we investigate the interaction of potassium and water with 2 x 2 reconstructed InN(0001) surfaces prepared by plasma-assisted molecular beam epitaxy. The influence of adsorbate-substrate-interaction on surface properties is characterized in-situ by photoelectron spectroscopy. Potassium exposure leads to a strong reduction in the work function Φ to 1.6 eV revealing a charge transfer from the adsorbate to the InN surface. In parallel, a reduction of the surface downward band bending by 0.2 eV and hence a reduced electron accumulation density is observed. While interaction of water with clean InN(0001)-2 x 2 surfaces induces only minor changes in the surface band bending, water adsorption at potassium covered InN(0001) leads to a reversal of the K-induced reduction in surface band bending and a slight increase of Φ to 2.4 eV. These results show that surrounding water modifies the interaction of potassium with InN(0001) surfaces. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

International Nuclear Information System (INIS)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

2013-01-01

Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

International Nuclear Information System (INIS)

Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

2012-01-01

We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

2011-01-01

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

Four bars inn; Four bars inn

Energy Technology Data Exchange (ETDEWEB)

Nishiumi, T. [National Defense Academy, Kanagawa (Japan)

1999-05-15

The name Four Bars Inn puns on four drinking bars and four bars on a musical score. It is a public house sited on the busy St. Mary Street, Cardiff, England. During my stay in that town, I often attended the regular jam session that opened at the bar at nine o`clock every Monday evening. A jam session is an event in which any amateur player, and a professional artist occasionally, is allowed to come on the stage freely and to play jazz, the participation fee as low as 300-yen. It is an occasion that provides a friendly meeting of man and woman, young and old, everyone carrying a pint of ale. Senior people happily talking to young ones aged like their grandchildren certainly presents a heart-warming scene, which we scarcely encounter in Japan. The affection that the British entertain toward their domestic furnishings relayed down through many a generation may lead to their respect for senior citizens. I heartily look forward detecting like scenes some day at drinking spots in Japan where the consumption-happy days are over. (NEDO)

A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

International Nuclear Information System (INIS)

Sugita, K.; Hashimoto, A.; Yamamoto, A.

2009-01-01

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiang; Yang, Qun [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Tan, Chunjian [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Liang, Qiuhua [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Jiang, Junke [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Ye, Huaiyu [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China)

2017-05-15

Highlights: • A comprehensive adsorption mechanism of InN monolayer is theoretical studied to distinguish the physic/chemi-sorption. • Different adsorption sites for different gases are systematically discussed. • The influence (enhanced or weakened) of external electric field to InN-gas system is well investigated. • The influences of gas adsorption to the optical properties (work function and light adsorption ability) of InN monolayer are also researched. - Abstract: Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH{sub 3}, H{sub 2}S, NO{sub 2}, NO, SO{sub 2}) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH{sub 3}, SO{sub 2}, H{sub 2}S and NO{sub 2}, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH{sub 3} adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

Directory of Open Access Journals (Sweden)

Yao Guo

2016-01-01

Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Customer Satisfaction at the Hospitality Industry: Holiday Inn Helsinki-Vantaa Airport

OpenAIRE

Eld, Anna

2015-01-01

The intention of this Bachelor’s Degree thesis was to examine and observe the customer service and especially customer satisfaction in a hotel industry, and Holiday Inn Helsinki-Vantaa Airport was selected to be an example for this survey. This survey and thesis is carried out by the author in collaboration with Holiday Inn Helsinki-Vantaa Airport, which was the commissioner of this Bachelor’s Degree thesis. This hotel was chosen since the author of this thesis did her second internship there...

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

International Nuclear Information System (INIS)

Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

2006-01-01

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

Directory of Open Access Journals (Sweden)

Roberto Bernal Correa

2014-01-01

Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

2010-07-15

InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

2007-01-01

The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2006-01-01

This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

Evaluation of the Environmental Health Conditions of Qom Hotels & Inns

Directory of Open Access Journals (Sweden)

B. Farzinnia

2009-02-01

Full Text Available Background and ObjectivesTourism is one of the three major global industries with 4 percent annual economic growth. Qom with roughly 17 million tourists in 2005 was the second religious tourism center in Iran. This study was designed to determine the environmental health criteria of Qom hotels and inns in 2007.MethodsThis descriptive - cross sectional study was carried out based on a standard check list of substance of edible, drinkable, cosmetic and hygienic products law from ministry of health and medical sciences. The checklist included 73 questions which were completed by face to face interviews and sanitary inspections. After analyzing the results of each residential center, the questionnaires were classified into three categories: hygienic (over 80 score, sanitary (40-79 and unacceptable centers (less than 40. The data were presented and analyzed by descriptive and analytical statistical methods such as X 2 and Fisher exact test.ResultsThe percentages of hygienic, sanitary and unacceptable conditions of hotels and inns were 35.5, 54.8 and 9.7, respectively. There was a direct relationship between academic degree of residential managers and the validity of employees health card (P=0.042 ConclusionBased on this the research, the environmental status of Qom hotels and inns was in relatively desirable conditions. Residential places with unacceptable condition were almost located in the old region of the city (e.g. around the Holly Shrine. Due to the structural failures, architectural problems and tremendous cost for repairs, it’s better that their activities be stopped and banned by government. With regard to the high percentage of hotels with sanitary conditions, at least improvements in health conditions accompanied by training and supervision are recommended. Keywords: Environmental Health; Environment and Public Health; Hotel; Inn; Qom, Iran.

4th INNS Symposia Series on Computational Intelligence in Information Systems

CERN Document Server

Au, Thien

2015-01-01

This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. INNS-CIIS aims to provide a platform for researchers to exchange the latest ideas and present the most current research advances in general areas related to computational intelligence and its applications in various domains. The 34 revised full papers presented in this book have been carefully reviewed and selected from 72 submissions. They cover a wide range of topics and application areas in computational intelligence and informatics.  

Ab-initio study of Mg-doped InN(0001 surface

Directory of Open Access Journals (Sweden)

A. Belabbes

2013-01-01

Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

2006-06-15

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

2005-01-01

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Energy Technology Data Exchange (ETDEWEB)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey); Bilkent University, Institute of Materials Science and Nanotechnology, Ankara (Turkey); Tuzakli, Refik [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey)

2017-03-15

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

International Nuclear Information System (INIS)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend; Tuzakli, Refik

2017-01-01

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Determination of dislocation densities in InN

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2012-03-15

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

Synthesis of InN nanoparticles by rapid thermal ammonolysis

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klimová, K.; Huber, Š.; Brázda, Petr; Mikulics, M.; Jankovský, O.; Sofer, Z.

2014-01-01

Roč. 16, č. 12 (2014), "2805-1"-"2805-11" ISSN 1388-0764 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : InN * nanoparticles * nanocrystals Subject RIV: CA - Inorganic Chemistry Impact factor: 2.184, year: 2014

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

International Nuclear Information System (INIS)

Porntheeraphat, S.; Nukeaw, J.

2008-01-01

The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

International Nuclear Information System (INIS)

Isamoto, K.; Uesaka, Y.; Yamamoto, A.; Hashimoto, A.

2006-01-01

We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppression mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

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Zervos Matthew

2008-01-01

Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

2013-01-01

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

High electron mobility InN

International Nuclear Information System (INIS)

Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

2007-01-01

Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

Science.gov (United States)

Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

2011-06-01

We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

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Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Energy Technology Data Exchange (ETDEWEB)

Molina-Sanchez, A.; Garro, N.; Garcia-Cristobal, A.; Cantarero, A. [Instituto de Ciencia de los Materiales, Universidad de Valencia (Spain); Segura-Ruiz, J. [European Synchrotron Radiation Facility, Experiments Div., Grenoble (France); Iikawa, F. [Instituto de Fisica Gleb Wataghin - Unicamp, CP 6165, Campinas (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2012-03-15

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schroedinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nadwrażliwość na aspirynę i inne niesteroidowe leki przeciwzapalne

Directory of Open Access Journals (Sweden)

Iwona Grzelewska-Rzymowska

2009-09-01

Full Text Available Wyróżnia się dwa rodzaje nadwrażliwości na kwas acetylosalicylowy (ASA: oskrzelowy i pokrzywkowy. Rodzaj pierwszy dotyczy chorych na astmę, u których ASA wywołuje napady duszności i objawy pozaoskrzelowe, takie jak wodnisty katar nosa, zaczerwienienie twarzy, szyi i klatki piersiowej, łzawienie. Opisano także obrzęk krtani, spadek ciśnienia tętniczego krwi, a nawet zgony. Pokrzywkowa postać nadwrażliwości na ASA dotyczy głównie chorych na przewlekłą pokrzywkę. ASA-astma i ASA-pokrzywka występują w każdym wieku, ale głównie dotyczą kobiet (70% badanych w wieku 30-50 lat. U części tych chorych występują cechy atopii. Charakterys­‑ tyczną cechą ASA-astmy są polipy nosa, często powiązane w przewlekłym zapaleniem zatok. Stwierdza się je u około 80% chorych na ASA-astmę. Polipy nosa mają charakter nawrotowy. Błona śluzowa nosa chorych na ASA-astmę jest nacieczona T-limfocytami, eozynofilami, komórkami tucznymi i makrofagami, większość komórek wykazuje ekspresję mRNA dla IL-5. Błona śluzowa oskrzeli również jest nacieczona eozynofilami będącymi bogatym źródłem leukotrienu C4, który prawdopodobnie bierze udział w patomechanizmie nadreaktywności na ASA. Przebieg kliniczny ASA-astmy u większości chorych jest ciężki, ale kontrolę astmy można uzyskać dzięki stosowaniu wziewnych glikokortykosteroidów i długo działających β2-agonistów. Objawy nadwrażliwości wywołuje większość niesteroidowych leków przeciwzapalnych. U chorych na astmę jest to duszność, a u chorych na pokrzywkę – wysiewy skórne. Objawy te są wywoływane przez indometacynę, kwas mefenamowy i flufenamowy, ibuprofen, fenylbutazon, naproksen, diflunisal i zomepirak. Natomiast dobrze tolerowane przez chorych na ASA-astmę są paracetamol, chlorochina, benzydamina, kwas salicylowy i dekstropropoksyfen. Nadwrażliwość na ASA ujawnia się na podstawie wywiadu i doustnych testów prowokacyjnych ze wzrastaj

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2011-01-15

We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001-bar) surfaces

International Nuclear Information System (INIS)

Ding, S.F.; Qu, X.P.; Fan, G.H.

2009-01-01

In this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001-bar) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0 0 0 1) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 1/4 ML coverage of the InN(0001-bar) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2x2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions.

R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

Science.gov (United States)

Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn

"Could I return to my life?" Integrated Narrative Nursing Model in Education (INNE).

Science.gov (United States)

Artioli, Giovanna; Foà, Chiara; Cosentino, Chiara; Sulla, Francesco; Sollami, Alfonso; Taffurelli, Chiara

2018-03-28

The Integrated Narrative Nursing Model (INNM) is an approach that integrates the qualitative methodology typical of the human sciences, with the quantitative methodology more often associated with the natural sciences. This complex model, which combines a focus on narrative with quantitative measures, has recently been effectively applied to the assessment of chronic patients. In this study, the model is applied to the planning phase of education (Integrated Narrative Nursing Education, INNE), and proves to be a valid instrument for the promotion of the current educational paradigm that is centered on the engagement of both the patient and the caregiver in their own path of care. The aim of this study is therefore to describe the nurse's strategy in the planning of an educational intervention by using the INNE model. The case of a 70-year-old woman with pulmonary neoplasm is described at her first admission to Hospice. Each step conducted by the reference nurse, who uses INNE to record the nurse-patient narrative and collect subsequent questionnaires in order to create a shared educational plan, is also described. The information collected was submitted, starting from a grounded methodology to the following four levels of analysis: I. Needs Assessment, II. Narrative Diagnosis, III. Quantitative Outcome, IV. Integrated Outcome. Step IV, which is derived from the integration of all levels of analysis, allows a nurse to define, even graphically, the conceptual map of a patient's needs, resources and perspectives, in a completely tailored manner. The INNE model offers a valid methodological support for the professional who intends to educate the patient through an inter-subjective and engaged pathway, between the professional, their patient and the socio-relational context. It is a matter of adopting a complex vision that combines processes and methods that require a steady scientific basis and advanced methodological expertise with active listening and empathy

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Tuna, Oecal

2013-07-18

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Tuna, Oecal

2013-01-01

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

Observation of complete oxidation of InN to In2O3 in air at elevated temperatures by using X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Lee, Ik-Jae; Yu, Chung-Jong; Hur, Tae-Bong; Kim, Hyung-Kook; Kim, Chae-Ok; Kim, Jae-Yong

2006-01-01

We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures. The analysis of the X-ray diffraction data demonstrated that the oxidation process started around 450 .deg. C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while the In3d peaks had not changed. These results strongly indicate that the oxidation transformed the structure of InN film to In 2 O 3 .

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

2012-06-15

The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Takeuchi, Noboru

2016-01-01

Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

International Nuclear Information System (INIS)

Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

2014-01-01

We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Science.gov (United States)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

International Nuclear Information System (INIS)

Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

2013-01-01

The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

Science.gov (United States)

Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

2012-01-01

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

Science.gov (United States)

Shaftel, A.; Ward, J.

2017-08-01

Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

Auger recombination as the dominant nonradiative recombination channel in InN

NARCIS (Netherlands)

Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

2013-01-01

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

Golf Tournament Drives in a Win for the Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

Science.gov (United States)

Schönfeldt-Aultman, Scott M.; Morrison, Carmen

2015-01-01

Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

International Nuclear Information System (INIS)

Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

2013-01-01

Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30–2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al 2 O 3 (0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 × 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10 19 cm −3 at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r H = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 × 10 19 cm −3 at 300°Κ.

Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

International Nuclear Information System (INIS)

Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

2010-01-01

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

International Nuclear Information System (INIS)

Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

2013-01-01

Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

2016-01-01

The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

International Nuclear Information System (INIS)

Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

2007-01-01

C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

OpenAIRE

Ángel Guillermo Félix Mendoza; Danny Daniel Cobeña López; Lisbeth Alexandra Párraga Muñoz; Lorena Carreño Mendoza

2015-01-01

El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores...

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Science.gov (United States)

Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

2018-05-01

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

2nd INNS Conference on Big Data

CERN Document Server

Manolopoulos, Yannis; Iliadis, Lazaros; Roy, Asim; Vellasco, Marley

2017-01-01

The book offers a timely snapshot of neural network technologies as a significant component of big data analytics platforms. It promotes new advances and research directions in efficient and innovative algorithmic approaches to analyzing big data (e.g. deep networks, nature-inspired and brain-inspired algorithms); implementations on different computing platforms (e.g. neuromorphic, graphics processing units (GPUs), clouds, clusters); and big data analytics applications to solve real-world problems (e.g. weather prediction, transportation, energy management). The book, which reports on the second edition of the INNS Conference on Big Data, held on October 23–25, 2016, in Thessaloniki, Greece, depicts an interesting collaborative adventure of neural networks with big data and other learning technologies.

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Science.gov (United States)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Minibaaritoiminnan kehittäminen Holiday Inn Helsinki-Vantaa Airportissa

OpenAIRE

Raunio, Reijo

2009-01-01

Tämä tutkimustyyppinen opinnäytetyö käsittelee Restel Oy:n operoiman Holiday Inn Helsinki-Vantaa Airportin minibaaritoiminnan kehittämistä. Työn on tarkoitus toimia hotellin johdon apuvälineenä pohdittaessa toimenpiteitä, joilla voitaisiin tehostaa minibaaritoiminnan tuottoja ja parantaa sen kannattavuutta. Koska kannattavuuden käsitteen avaamiselle syntyy näin ollen olennainen tarve, se saa pääroolin viitekehyksessä. Kannattavuuden osalta käsitellään paitsi sen yleistä määrittelyä myös ...

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

International Nuclear Information System (INIS)

Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

2000-01-01

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

An Analysis of Open-Ended Online Reviews about Bed and Breakfast and Inns in Portugal

Directory of Open Access Journals (Sweden)

Sara Evans Machado dos Santos

2014-03-01

Full Text Available Researches about User-Generated Content (UGC have gained attention in the fields of Tourism and Hospitality in the last years. This study focus on online reviews about alternative accommodations – B&Bs and Inns. The development of this work was realized applying inductive methods and using an exploratory approach. We collected a sample of 450 online reviews and analyzed them segment by segment, making a total of 4621 segments. We used the Appraisal Theory to assess what attitudes online reviewers are expressing about B&Bs and Inns in Lisbon. We verified that positive appreciation is the most frequent attitude while expressions of affect and judgment are more rare. This study contributes to the academy as it brings a new parameter of analysis of UGC using the Appraisal Theory in the field of Hospitality.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

International Nuclear Information System (INIS)

Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

2011-01-01

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Structural and magnetic properties of Cr and Mn doped InN

International Nuclear Information System (INIS)

Ney, A.; Rajaram, R.; Arenholz, E.; Harris, J.S.; Samant, M.; Farrow, R.F.C.; Parkin, S.S.P.

2006-01-01

We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

2017-03-13

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

HOUSE DUST MITE CONTAMINATION IN HOTELS AND INNS IN BANDAR ABBAS, SOUTH OF IRAN

Directory of Open Access Journals (Sweden)

M. Soleimani, J. Rafinejad

2008-07-01

Full Text Available House dust mites have been shown to be strongly associated with allergic respiratory diseases such as, bronchial asthma, rhinitis and atopic dermatitis in the world. The climatic conditions of Bandar-Abbas, which is located in a coastal area and has a humid subtropical climate, provide a suitable place to proliferate mites. The aim of this study was to determine the contamination rate and analyze the house dust mite fauna in hotels and inns in Bandar-Abbas that had not been investigated previously. In this study 6 hotels and 6 inns were selected randomly in six areas of Bandar-Abbas. Two dust samples were collected from each place with a vacuum cleaner. One square meter of carpets and mattresses were vacuumed for a period of 1 min. Then the samples were cleared in lactic acid and then mites were mounted in Hoyer's medium for study and identification. A total of 2644 mites were collected and identified. The major mite family was Pyroglyphidae (98%. Dermatophagoides pteronyssinus was the most frequent and most numerous species recorded, occurring in 91% of samples examined and forming 88% of the Pyroglyphidae and 86% of the total mite populations. The family Cheyletidae was less commonly found with Cheyletus malaccensis (2%. Most of the mites were isolated from the carpets (57.5%, and a smaller number from mattresses (42.5%. Mites were present in 96% of the dust samples. Results revealed that all inns and 83% of hotels were contaminated by more than one species of mite and 34% of them had a population of more than 100 mites /g dust. This rate of contamination can be a major risk factor in asthma and other respiratory allergic diseases

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

International Nuclear Information System (INIS)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

2014-01-01

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

International Nuclear Information System (INIS)

Hashimoto, A.; Iwao, K.; Yamamoto, A.

2008-01-01

In the InN growth on sapphire substrates, it is difficult to control both of tilt and twist angle fluctuations at same time. It is necessary to understand initial growth stage such as the role of nitridation process to improve the mosaicity. Low-temperature nitridation technique brings the drastically improvement of the tilt angle fluctuation, although the twist angle fluctuation becomes worse. Such experimental results strongly indicate that there is some trade-off relation between the tilt and the twist angle fluctuations as a function of the nitridation condition such as the nitridation time. In this paper, we discuss about such trade-off relation in the direct growth of InN on the nitridation sapphire substrates and also propose a simple model of initial nitridation process to explain it. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

Energy Technology Data Exchange (ETDEWEB)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

2014-05-12

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn

Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

International Nuclear Information System (INIS)

Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

2008-01-01

The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2008-07-01

We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

2008-01-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2008-07-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

WPŁYW WIEKU NA WYTRZYMAŁOŚĆ NA ŚCISKANIE BETONU MODYFIKOWANEGO DODATKIEM METAKAOLINITU

Directory of Open Access Journals (Sweden)

Janusz KONKOL

Full Text Available W artykule przedstawiono wyniki badań wytrzymałości na ściskanie betonów modyfikowanych dodatkiem metakaolinitu po 2, 3, 7, 14, 28 i 56 dniach dojrzewania. Dodatek metakaolinitu użyto jako częściowy substytut cementu, dokonując wymiany 10% masy cementu na metakaolinit. Udział ten uznawany jest za optymalny z uwagi na inne niż wytrzymałość na ściskanie właściwości betonu, w tym trwałość betonu modyfikowanego metakaolinitem. Badania przeprowadzono także dla betonu tła, betonu bez dodatku metakaolinitu. Betony wykonano przy założeniu stałego stosunku woda/spoiwo, względnie woda/cement wynoszącego 0,45 oraz przy użyciu cementu portlandzkiego CEM I 32,5R, piasku kwarcowego frakcji do 2 mm oraz grysu bazaltowego frakcji do 16 mm. W celu uzyskania pożądanej konsystencji mieszanki betonowej zastosowano upłynniacz na bazie estrów polikarboksylowych. Uzyskane rezultaty badań potwierdziły wysoką aktywność pucolanową metakaolinitu już we wczesnym okresie dojrzewania betonu. W okresie między 3 a 7 dniem dojrzewania stwierdzono wolniejszy przyrost wytrzymałości na ściskanie w betonie niemodyfikowanym metakaolinitem, podczas gdy w betonie, w którym 10% masy cementu zastąpiono metakaolinitem uwidocznił się znaczący przyrost wytrzymałości na ściskanie. Po 2 dniach dojrzewania wytrzymałość na ściskanie betonu tła była nieznacznie wyższa od wytrzymałości na ściskanie betonu modyfikowanego. Korzystny wpływ dodatku metakaolinitu wynikający z jego wysokiej aktywności pucolanowej, jak również z uszczelniającego charakteru tego dodatku obserwowano jest zwłaszcza w okresie między 3 a 14 dniem dojrzewania. W tym okresie obserwowano znaczny przyrost wytrzymałości na ściskanie betonu modyfikowanego w porównaniu z wytrzymałością na ściskanie betonu tła. Po 7 i 14 dniach dojrzewania stwierdzono odpowiednio prawie 25% i 21% wzrost wytrzymałości na ściskanie na skutek użycia metakaolinitu.

Osoba niepełnosprawna - inne rodzicielstwo, inne braterstwo?

OpenAIRE

Stelter, Żaneta

2012-01-01

Urodzenie dziecka niepełnosprawnego, to wydarzenie, które ma wpływ na jakość życia rodziny. W artykule przedstawiono w jaki sposób niepełnosprawność dziecka określa sytuację życiową pozostałych członków rodziny. Opisano specyfikę realizacji ról rodzicielskich w rodzinie z dzieckiem niepełnosprawnym oraz przeanalizowano sytuacje psychospołeczną zdrowego rodzeństwa.

Solar hot water system installed at Quality Inn, Key West, Florida

Science.gov (United States)

1980-04-01

The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

Science.gov (United States)

Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

2018-05-01

The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

Science.gov (United States)

The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Directory of Open Access Journals (Sweden)

K. Aravind

2012-03-01

Full Text Available We present tunneling measurements on an InN nanobelt which shows signatures of superconductivity. Superconducting transition takes place at temperature of 1.3K and the critical magnetic field is measured to be about 5.5kGs. The energy gap extrapolated to absolute temperature is about 110μeV. As the magnetic field is decreased to cross the critical magnetic field, the device shows a huge zero-bias magnetoresistance ratio of about 400%. This is attributed to the suppression of quasiparticle subgap tunneling in the presence of superconductivity. The measured magnetic-field and temperature dependence of the superconducting gap agree well with the reported dependences for conventional metallic superconductors.

Identifying Sustainable Design Opportunities in Tribal Hotels and Casinos: Mescalero Inn of the Mountain Gods Hotel and Casino

Energy Technology Data Exchange (ETDEWEB)

Fuller, Diana [Univ. of Illinois, Springfield, IL (United States); Martino, Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies; Begay, Sandra K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies

2016-10-01

The Indian Gaming Regulatory Act, passed by Congress on October 17, 1988 provided tribes with the Federal statute to pursue gaming activities on tribal lands. Many Native communities contribute to larger regional economies and tourism industries. These casino facilities often include resort-style hotel amenities. Not surprisingly, they are also large consumers of energy, operating 24 hours a day and 7 days a week. Tribes with hotels and casinos can implement sustainable design features and not only receive economic gain, but also environmental and community benefits. The intention of this paper is to identify sustainable design opportunities at the Inn of the Mountain Gods Hotel and Casino. This research stems from previous work the researcher conducted and subsequently published for the Illinois Green Business Association. First, the paper reviews what sustainable design is and points of interest when considering sustainable construction. Next, the paper explores the precedents set by the Blue Lake Rancheria, Rincon Band of Luiseno Indians, and the Forest County Potawatomi Tribe. Then, the research examines areas to collect baseline information and identify opportunities in sustainable design for the Mescalero Apache Tribe, Inn of the Mountain Gods Hotel and Casino located in New Mexico. Lastly, the work explores the resources and funding options available to the tribe.

Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

Science.gov (United States)

1978-10-13

Combustion in G.D. Smith, C.E. Peters High Speed Flows AEDC/ARO (PO-78-0012) 5:00 ADJOURN 6:30 Social Hour (Cash Bar) Ramada Inn Banquet 12 Oct. 78...which would sustain the instability structures observed in a number of problemA . During the initial phase of the development of the instabilities, the

Niezamknięte księgi – o księgach cechowych na Pomorzu Zachodnim

Directory of Open Access Journals (Sweden)

Agnieszka Pawłowska

2010-01-01

Full Text Available Niniejsze badanie koncentruje się na księgach powstałych w wyniku działalności organizacji cechowych na Pomorzu Zachodnim. Jest to specyficzny rodzaj zabytków, w których odzwierciedla się życie zarówno zawodowe, jak i społeczne oraz towarzyskie korporacji. Pisane były niejednokrotnie przez kolejne pokolenia, obejmują nawet kilka stuleci, przez co stanowią cenne źródło historyczne. Księgi dzieliły się na urzędowe, obejmujące całokształt działalności (Amtsbuch, oraz wyspecjalizowane – księgi protokołów (Protokollbuch, księgi mistrzów, czeladników i uczniów (Meister-, Gesellen- i Lehrjungenbuch, księgi rachunkowe (Rechnungsbuch i księgi normatywne. Tekst ukazuje znaczną różnorodność kwestii poruszanych w poszczególnych rodzajach ksiąg, a także ich formę zewnętrzną. Podstawę do badań stanowią obiekty przechowywane w Archiwum Państwowym w Szczecinie. Daleko posunięte podobieństwo w funkcjonowaniu cechów poza granicami Pomorza pozwala na przeniesienie wniosków również na inne organizacje cechowe.

Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

International Nuclear Information System (INIS)

Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

2011-01-01

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Science.gov (United States)

Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-03-01

Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

International Nuclear Information System (INIS)

Gonzalez, D; Lozano, J G; Herrera, M; Morales, F M; GarcIa, R; Ruffenach, S; Briot, O

2010-01-01

Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In 2 O 3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.

Mito, magia e religião na volsunga saga Um olhar sobre a trajetória mítica do heroi sigurd

OpenAIRE

Amorim, Suenia de Sousa

2013-01-01

Os épicos são obras primas universais, expressões inexoráveis da alma dos povos. Neste sentido elegemos a Völsunga Saga como plataforma para apreensão de aspectos essenciais do fenômeno religioso nórdico pré-cristão, uma vez que esta apresenta elementos tais como: magia, crença na inexorabilidade do destino, constância de sonhos premonitórios, além da intervenção constante da figura mítica de Óðinn em sua composição. Conforme inerente às construções mitológicas, identificamos aqui a figura do...

Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

Science.gov (United States)

Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

2017-08-01

In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

Sensibilidad postratamiento de blanquamiento dental con la solución de McInnes en pacientes con fluorosis dental grado TF4

OpenAIRE

Paredes Balseca, Jenny Carolina

2017-01-01

The dental sensibility is one of the problems caused by multiple factors, one of them is the posttreatment sensibility to the dental clearance, nevertheless it is the most used method at present in the persons who has dental fluorosis with the purpose of improving the color of the tooth and the esthetics, in the present investigation there was studied the behavior of the application of solution of McInnes in this type of teeth by relation to the sensibility Objective: To evaluate the degree o...

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Science.gov (United States)

Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

2015-05-01

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Energy Technology Data Exchange (ETDEWEB)

Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2015-05-15

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Richter, Thomas Fabian

2008-12-19

This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

Directory of Open Access Journals (Sweden)

Ángel Guillermo Félix Mendoza

2015-06-01

Full Text Available El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores y matriz de diagnóstico de fortalezas, oportunidades, debilidades y amenazas. En el estudio de mercado se analizaron los componentes de oferta y demanda del hotel, se determinaron algunas fallas en la denominación utilizada, según los criterios para la categorización hotelera manejada por el Ministerio de Turismo. En función del diagnóstico FODA, se generaron estrategias para el posicionamiento y comercialización del hotel. Mediante las encuestas realizadas a los huéspedes se pudo conocer el perfil del visitante que llega al hotel y se elaboró un plan publicitario, en el cual sobresale el logotipo y slogan, tríptico promocional, la promoción en página web y redes sociales. Se establecieron estrategias del mix para minimizar falencias operativas en el hotel. Se concluye que la principal nomenclatura utilizada no concuerda con los parámetros establecidos por el Ministerio de Turismo, por lo que se plantea reestructurar ciertas áreas específicas como la cantidad de habitaciones o cambiar la denominación a hostal.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Directory of Open Access Journals (Sweden)

B. K. Barick

2015-05-01

Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Polityka rachunkowości spółek notowanych na GPW w Warszawie w zakresie ujmowania przychodów z kontraktów deweloperskich

Directory of Open Access Journals (Sweden)

Renata Dyląg

2010-04-01

Full Text Available Głównym przedmiotem działalności jednostek z branży deweloperskiej jest rea-lizacja kontraktów deweloperskich, polegających na budowie (bezpośrednio lub poprzez podwykonawców a następnie sprzedaży powierzchni w budynkach handlowych, rozrywkowych, biurowych, hotelowych i mieszkalnych. Brak precyzyjnych rozwią-zań dotyczących ujmowania przychodów z tych kontraktów powodował, że niektóre jednostki ujmowały przychody w momencie przekazania nieruchomości nabywcy (zgodnie z MSR 18 „Przychody”, natomiast inne ujmowały przychody w trakcie trwania okresu budowy tej nieruchomości (zgodnie z MSR 11 „Umowy o budowę”. Celem artykułu jest ocena – przyjmowanych przez spółki deweloperskie noto-wane na warszawskiej Giełdzie Papierów Wartościowych – rozwiązań dotyczących ujmowania przychodów i wyników z kontraktów deweloperskich oraz zaprezento-wanie wpływu interpretacji KIMSF 15 „Umowy dotyczące budowy nieruchomości” na sprawozdawczość tych spółek.

Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

CERN Document Server

Klaiber Lodewigs, Jonas M

2003-01-01

The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

Molten Salt-Based Growth of Bulk GaN and InN for Substrates

Energy Technology Data Exchange (ETDEWEB)

Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

2006-09-01

An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N^3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

International Nuclear Information System (INIS)

Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

2005-01-01

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Inna codzienność. Funkcjonowanie Wenecji jako miasta bez samochodów

Directory of Open Access Journals (Sweden)

Hubert Trammer

2017-12-01

Full Text Available W kształtowaniu przestrzeni zazwyczaj przyjmowane są standardy wynikające z przyjętych powszechnie rozwiązań mających zaspokajać ludzkie potrzeby. Niestety często środki okazują się ważniejsze niż cele. Dążąc do zapewnienia mobilności i jednocześnie ochrony przed uciążliwościami transportu ogromne przestrzenie przeznacza się na wyalienowane z otoczenia trasy komunikacyjne i przestrzenie izolujące. Są jednak inne rozwiązania. Spektakularnym przykładem jest Wenecja – miasto, którego spora część jest niedostępna dla samochodów. Zatem pozbawiona jest związanych z ich obecnością uciążliwości, ale także możliwości wykorzystania ich w wielu różnych celach. W Wenecji w rolach w większości świata zarezerwowanych dla samochodów występują różnego rodzaju łodzie i statki. Warto zwrócić uwagę na szereg codziennych sytuacji z funkcjonowania części Wenecji pozbawionej samochodów. Zastępuje je nie tylko transport wodny, ale także pieszy. Znaczenie dla codzienności Wenecji ma także kameralna skala pieszych placów i uliczek. Wenecja boryka się z problemem utraty mieszkańców wypieranych przez turystów, oraz wypierania funkcji służących mieszkańcom przez przeznaczone dla turystów. Jednakże te problemy nie powinny dyskredytować organizacji przestrzeni w mieście. Są one bowiem skutkiem ubocznym sukcesu turystycznego wynikającego z wyjątkowej jakości miejsca. Przykłady rozwiązań opartych na odrzuceniu podporządkowania przestrzeni samochodom można znaleźć także w wielu innych miejscowościach, na terenie których odrzucenie dominacji samochodu nie przybrało takiej skali jak w Wenecji. Przykłady można znaleźć także w Polsce. Inne relacje przestrzenne powodują inne relacje między różnymi użytkownikami, a także inne relacje między przebywaniem w mieście, a przemieszczaniem się przez nie.

Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

Science.gov (United States)

Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

2016-10-01

We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

Model improwizacji polifonicznej na tle popularnych metod improwizacji w muzyce rozrywkowej

Directory of Open Access Journals (Sweden)

Adam Fulara

2012-12-01

Full Text Available Artykuł składa się z dwóch części. Pierwsza z nich, bardziej ogólna, zawiera opis zjawisk związanych z improwizacją, zwłaszcza gitarową, z wyszczególnieniem problemów wykonawczych stojących przed improwizatorem. Dwa punkty widzenia zostały przedstawione: pierwszy, szczegółowy, opisuje po kolei elementy muzyki i ich znaczenie w procesie improwizacji, drugi bardziej ogólny mówi o zjawiskach, których nie da się opisać, ani analizować w prosty sposób, bądź są inne w przypadku każdego utworu. Należy do nich interakcja pomiędzy członkami zespołu, wyrażanie emocji poprzez muzykę i problematykę poszukiwań własnego głosu w sztuce. Ta część zawiera jeszcze opis trzech zupełnie różnych podejść do improwizacji na gitarze. Pierwsza to wykorzystanie centrum tonalnego (wzbogaconego napięciami dominantowymi, druga metoda polega na połączeniu harmonii utworu ze stosowanymi skalami (stosowana w muzyce fusion, trzecia polega na ścisłym wykorzystaniu dźwięków akordowych w improwizacji bez stosowania skal (charakterystyczna dla muzyki bebop. Druga część tekstu zawiera opis szczególnego rodzaju improwizacji polifonicznej z wykorzystaniem tappingu oburęcznego na gitarze. Model ten stoi w opozycji do trzech wcześniej przedstawionych sposobów rozumienia improwizacji gitarowej. System opiera się zarówno na metodach stosowanych w polifonii renesansu i baroku (m. in. melodia wiodąca Cantus Firmus, reguły kontrapunktu, jak i na założeniach jednogłosowej improwizacji bebopowej (wykorzystanie dźwięków wiodących, rozwiązania charakterystyczne dla czterodźwięków naturalnych. Opis ten nawiązuje do pierwszej części artykułu, grupując zagadnienia wokół poszczególnych elementów dzieła muzycznego. Ta część zawiera uwagi i spostrzeżenia zebrane w ciągu ośmiu lat poszukiwań własnej drogi muzycznej autora.

Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

Energy Technology Data Exchange (ETDEWEB)

Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2014-12-14

The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

Przydatność artroskopowej totalnej synowektomii w leczeniu wysiękowego zapalenia stawu kolanowego u chorych na reumatoidalne zapalenie stawów

Directory of Open Access Journals (Sweden)

Piotr Frąszczak

2011-06-01

Full Text Available Reumatoidalne zapalenie stawów (RZS to przewlekła immunologiczniezależna układowa choroba tkanki łącznej. Charakteryzujeją symetryczne i przewlekłe zapalenie błony maziowej. Obej -muje stawy obwodowe, a z dużych stawów najczęściej stawkolanowy. Oprócz leczenia farmakologicznego jedną z metod opera -cyjnych jest synowektomia. Ostatnio coraz większego znaczenianabiera artroskopowa totalna synowektomia z uwagi na mało -inwazyjność, dużą radykalność oraz skrócenie czasu terapii i rehabilitacji.Technika ta pozwala na dość dokładne usunięcie błonymaziowej z 4 portów artroskopowych, a wskazaniem są nawracającewysięki trwające 6 miesięcy.Celem pracy było przedstawienie wczesnych wyników i sku -teczności artroskopowej totalnej synowektomii wykonaneju chorych na RZS. Ocenie poddano chorych po artroskopowejtotalnej synowektomii stawu kolanowego wykonanej w KliniceReumoortopedii Instytutu Reumatologii w Warszawie w latach2005–2006. Okres obserwacji wynosił dwa lata. Badania prowa -dzono na podstawie opracowanych własnych kart badań, a ocenywyników dokonano na podstawie czynnościowych skal HSSi Lysholma. Do badania zgłosiło się 15 chorych z 21 osób opero -wanych. Ocenę czynnościową przeprowadzono w okresie od półroku do 2 lat po artroskopowej totalnej synowektomii. Stwier dzono,że wynik doskonały i dobry po operacji osiągnęło w tym okresie 80% badanych. Wyniki te są porównywalne z wynikami uzyskanymiprzez inne ośrodki zajmujące się tym problemem w Europie i naświecie. Artroskopowa totalna synowektomia umożliwia szybkiepodjęcie rehabilitacji i funkcji czynnościowej stawu, skraca czasleczenia i obniża jego koszty oraz redukuje dawki leków podstawowych(tab. I.

Retrospective forecasts of the upcoming winter season snow accumulation in the Inn headwaters (European Alps)

Science.gov (United States)

Förster, Kristian; Hanzer, Florian; Stoll, Elena; Scaife, Adam A.; MacLachlan, Craig; Schöber, Johannes; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

2018-02-01

This article presents analyses of retrospective seasonal forecasts of snow accumulation. Re-forecasts with 4 months' lead time from two coupled atmosphere-ocean general circulation models (NCEP CFSv2 and MetOffice GloSea5) drive the Alpine Water balance and Runoff Estimation model (AWARE) in order to predict mid-winter snow accumulation in the Inn headwaters. As snowpack is hydrological storage that evolves during the winter season, it is strongly dependent on precipitation totals of the previous months. Climate model (CM) predictions of precipitation totals integrated from November to February (NDJF) compare reasonably well with observations. Even though predictions for precipitation may not be significantly more skilful than for temperature, the predictive skill achieved for precipitation is retained in subsequent water balance simulations when snow water equivalent (SWE) in February is considered. Given the AWARE simulations driven by observed meteorological fields as a benchmark for SWE analyses, the correlation achieved using GloSea5-AWARE SWE predictions is r = 0.57. The tendency of SWE anomalies (i.e. the sign of anomalies) is correctly predicted in 11 of 13 years. For CFSv2-AWARE, the corresponding values are r = 0.28 and 7 of 13 years. The results suggest that some seasonal prediction of hydrological model storage tendencies in parts of Europe is possible.

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

An Overview of the Geological and Geotechnical Aspects of the New Railway Line in the Lower Inn Valley

Science.gov (United States)

Eder, Stefan; Poscher, Gerhard; Sedlacek, Christoph

The new railway line in the lower Inn-valley is part of the Brenner railway axis from Munich to Verona (feeder north). The first section between the villages of Kundl and Radfeld, west of Wörgl, and the village of Baumkirchen, east of Innsbruck, will become one of the biggest infrastructure projects ever built in Austria, with a length of approx. 43 km and an underground portion of approx. 80%. The article gives an overview of the various geologic formations - hard rock sections in the valley slopes, different water-saturated gravel and sand formations in the valley floor and geotechnically difficult conditions in sediments of Quaternary terraces. It also describes the methodology of the soil reconnaissance using groundwater models for hydrogeologic estimations, core drillings for evaluating geologic models and describes the experiences gained from the five approx. 7.5 km long reconnaissance tunnels for geotechnical and hydrogeological testing. The results of the soil reconnaissance were used to plan different construction methods, such as excavation in soft rock under a jet grouting roof and compressed-air, as well as mechanised shield with fluid support.

Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

Science.gov (United States)

Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

2015-04-01

For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

Doświadczalna analiza współczynników oporów lokalnych na kolankach w systemach przewodów wielowarstwowych

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Natalia Krystyna Gietka

2015-03-01

Full Text Available Zastosowanie tworzyw sztucznych jako materiału do budowy instalacji wymusiło konieczność weryfikacji dostępnych obecnie informacji dotyczących wartości współczynników oporów lokalnych, które stanowią niezbędną wiedzę potrzebną do obliczania wartości strat energii mechanicznej, jakie powstają w trakcie przepływu. Współczynniki te mają duże znaczenie w obliczeniach hydraulicznych wymiarowanej instalacji. Wpływają one na końcowy wynik w istotny sposób, dlatego nieprawidłowe ich przyjęcie może prowadzić do poważnych w skutkach błędów. Niestety wartości podawane przez producentów, normy czy też literaturę są inne w porównaniu z wartościami uzyskiwanymi metodą doświadczalnych badań. W artykule zaprezentowane zostały wyniki badań doświadczalnych, mających na celu wyznaczenie wartości współczynników oporów lokalnych na kolankach 90° trzech określonych średnic, pochodzących od czterech wybranych producentów systemów instalacyjnych. Otrzymane wartości współczynników oporów lokalnych porównano z wartościami, jakie podawane są przez producenta złączek, wyznaczonymi według normy PN-76/M-34034: 1976 oraz dostępnymi w literaturze przedmiotu.

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

Energy Technology Data Exchange (ETDEWEB)

United States. Bonneville Power Administration.

1985-04-01

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

Suckling behaviour and fertility in beef cows on pasture l. Suckling ...

African Journals Online (AJOL)

Ongeag die frekwensie van soging en dae na kalwing, was die mees algemene sogingperiode tussen 04:00 en 06:00. Die minste sogingsperiodes is waargeneemt ussen middernag en ongeveer0 4:00. Die langste interval tussent wee sogingsperiodesb inne 'n 24hperiode het altyd voor 4:00 voorgekom en hierdie interval ...

Dgroup: DG01664 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetical recombination) (JAN...) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetical recombination) (JAN) D0825...6 ... Nateplase (INN) D03695 ... Desmoteplase (USAN/INN) D04665 ... Lanoteplase (USAN/INN); Lanoteplase (genetical re...combination) (JAN) D09814 ... Silteplase (INN); Silteplase (genetical recombination) (JAN) D09823 ... Duteplase (INN); Duteplase (genetica... DG01664 DGroup Tissue plasminogen activator (t-PA) -teplase ... D02837 ... Alteplase (USP/INN); Alteplase (geneti

Flexibility in Management of Modernization in Construction - Electrical Works/ Elastyczność W Zarządzaniu Modernizacją Obiektów Budowlanych Na Przykładzie Robót Elektrycznych

Directory of Open Access Journals (Sweden)

Nowotarski Piotr

2015-06-01

Full Text Available Artykuł prezentuje możliwość zastosowania elastyczności w modernizacjach istniejących obiektów budowlanych na przykładzie instalacji oświetleniowej. Elastyczność jest rozumiana w tym przypadku jako umiejętne dostosowanie się do zmian w dynamicznie zmieniającym się środowisku. Istotą podejścia elastycznego jest podejmowanie odpowiednich decyzji w odpowiednim czasie opartych na monitoringu środowiska i procesu w toku. Prezentowane studium przypadku modernizacji instalacji elektrycznej w budownictwie wielorodzinnym w częściach wspólnych obiektu (korytarze, klatki schodowe, hala garażowa opiera się na wymianie i modernizacji tylko tych punktów, które w danym momencie ulegają awarii. Prosta analiza oby typów modernizacji opiera się na porównaniu kosztów, natomiast trzeba zaznaczyć, że możliwe są także inne kryteria (środowiskowe, konfliktu społecznego, itp., które będą przedmiotem kolejnych publikacji. Zastąpienie tradycyjnych żarówek rozwiązaniami opartymi na technologii LED z zastosowaniem czujników ruchu może prowadzić do znacznych oszczędności, ale może też oznaczać obniżenie komfortu dla użytkowników (np. dla osób starszych, którym jeden cykl działania oświetlenia nie jest wystarczający do pokonania całej drogi na korytarzu. Osiągnięcie kompromisu w tego typu konfliktach interesów może być rozwiązane za pomocą podejścia elastycznego i zwinnego.

Rozpoznanie i leczenie alergicznego nieżytu nosa

Directory of Open Access Journals (Sweden)

Anna Grad

2009-09-01

Full Text Available Alergiczny nieżyt nosa (ANN jest najczęstszą chorobą alergiczną na świecie. Często współistnieje z innymi chorobami alergicznymi, np. astmą, alergicznym zapaleniem spojówek lub atopowym zapaleniem skóry. Jest chorobą zapalną o podłożu immunologicznym, wywołaną IgE-zależną reakcją błony śluzowej nosa na alergen. Biorąc pod uwagę czas utrzymywania się objawów, ANN można podzielić na okresowy i przewlekły – ich przebieg może być łagodny oraz umiarkowany lub ciężki. Alergiczny nieżyt nosa jest chorobą zależną od wielu czynników. Za jego rozwój odpowiadają interakcje czynników środowiskowych i genetycznych. Do czynników środowiskowych zalicza się alergeny powietrznopochodne zewnętrzne i domowe (pyłki roślin, zarodniki grzybów pleśniowych, roztocze kurzu domowego, naskórki i sierści zwierząt, owady, alergeny zawodowe i zanieczyszczenia powietrza atmosferycznego. Czynniki genetyczne to atopia i współistnienie określonych polimorfizmów genów. Objawami ANN są świąd, kichanie, surowicza wydzielina nosowa, niedrożność nosa, utrata powonienia. Rozpoznanie ANN opiera się na wykazaniu zgodności pomiędzy objawami i wynikami punktowych testów skórnych lub obecnością we krwi swoistych IgE. Pomiar całkowitego IgE nie jest przydatny w rozpoznaniu ANN, a donosowe próby prowokacyjne są wykorzystywane głównie w badaniach naukowych, rzadziej w praktyce klinicznej. Postępowanie terapeutyczne obejmuje edukację pacjenta, zmniejszenie narażenia na alergeny, leczenie farmakologiczne oraz immunoterapię swoistą. W leczeniu farmakologicznym stosujemy leki przeciwhistaminowe doustne i donosowe, glikokortykosteroidy donosowe i systemowe, leki obkurczające naczynia błony śluzowej nosa, montelukast, bromek ipratropium i kromony. Immunoterapia swoista jest stosowana w leczeniu wybranych grup chorych i wpływa na naturalny przebieg chorób alergicznych.

Dgroup: DG01707 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available gen activator (t-PA) ... D02837 ... Alteplase (USP/INN); Alteplase (genetical recombination) (JAN) ... D02947 ... Ani...streplase (USAN/INN) ... D05721 ... Reteplase (USAN/INN) ... D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetic...al recombination) (JAN) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetica... ... Lanoteplase (USAN/INN); Lanoteplase (genetical recombination) (JAN) ... D09814 ... Silteplase (INN); Silteplase (genetica...l recombination) (JAN) ... D09823 ... Duteplase (INN); Duteplase (genetical re

Re-evaluation of microscopic and integral cross-section data for important dosimetry reactions. Re-evaluation of the excitation functions for the 24Mg(n,p)24Na, 32S(n,p)32P, 60Ni(n,p)60m+gCo, 63Cu(n,2n)62Cu, 65Cu(n,2n)64Cu, 64Zn(n,p)64Cu, 115In(n,2n)114mIn, 127I(n,2n)126I, 197Au(n,2n)196Au and 199Hg(n,n')199mHg reactions

International Nuclear Information System (INIS)

Zolotarev, K.I.

2008-08-01

Re-evaluations of cross sections and their associated covariance matrices have been carried out for ten dosimetry reactions: - excitation functions for the 63 Cu(n,2n) 62 Cu, 65 Cu(n,2n) 64 Cu, 64 Zn(n,p) 64 Cu, 115 In(n,2n) 114m In and 199 Hg(n,n') 199m Hg reactions were re-evaluated over the neutron energy range from threshold to 20 MeV; - excitation functions for the 24 Mg(n,p) 24 Na, 32 S(n,p) 32 P and 60 Ni(n,p) 60m+g Co were reevaluated in the energy range from threshold to 21 MeV; - excitation functions for the 127 I(n,2n) 126 I and 197 Au(n,2n) 196 Au reactions were reevaluated in the energy range from threshold to 32 and 40 MeV, respectively. Benchmark calculations performed for 235 U thermal fission and 252 Cf spontaneous fission neutron spectra show that the integral cross sections derived from the newly evaluated excitation functions exhibit improved agreement with related experimental data when compared with the equivalent data from the IRDF-2002 library. (author)

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dgroup: DG01709 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available omiparin (USAN); Semuloparin (USAN); Heparin (BAN) ... D02112 ... Heparin sodium (JP17/USP/INN); Parnaparin sodium... (INN) ... D04427 ... Heparin calcium (JP17); Nadroparin calcium (INN) ... D03674 ... Enoxaparin sodium (JAN/USAN/...INN) ... D04977 ... Parnaparin sodium (JP17) ... D02980 ... Ardeparin sodium (USAN/INN) ... D03337 ... Reviparin sodiu...m (JAN) ... D03353 ... Dalteparin sodium (JAN/USAN/INN) ... D03673 ... Deligoparin sodium... (USAN/INN) ... D06398 ... Tinzaparin sodium (USAN) ... D09860 ... Adomiparin sodium (USAN); Semuloparin sodium (USAN/INN); Ardeparin sodium

Distribution of air pollutants in the Inn Valley atmosphere during high concentration events in winter 2006

International Nuclear Information System (INIS)

Schnitzhofer, R.; Norman, M; Dunkl, J.; Wistaler, A.; Hansel, A.; Neininger, B.; Gohm, A.

2006-01-01

Full text: The goal of the INNOX field campaign, which took place during January and February 2006 near the town of Schwaz, was to obtain a three-dimensional picture of the spatial distribution of air pollutants in the Inn Valley during wintertime. For this purpose continuous ground based measurements and, on six chosen days, vertical profiles within the lowest 200 m above ground level (AGL) of the valley atmosphere of certain VOCs (benzene, toluene, etc.) and CO were performed using a proton-transfer-reaction mass spectrometry instrument (PTR-MS). For the soundings a 200-m long teflon line was fixed on a tethered balloon through which the air was sucked to the PTR-MS instrument and to a CO analyser. Next to the inlet on the tethered balloon meteorological data, such as air temperature, pressure, wind, were measured as well. Above the lowest 200 m AGL a research aircraft from MetAir AG (Switzerland), equipped with various instruments for in-situ measurements of air pollutants and meteorological data, was operated. A typical flight pattern consisted of five vertical cross sections between about 150 to 2500 m AGL and lasted about three hours. Altogether 25 hours of aircraft measurements were carried out on six different days. The combination of low-level balloon measurements and upper-level aircraft observations yields vertical profiles of various parameters which cover the whole valley atmosphere. Preliminary results which show strong vertical but also horizontal gradients of air pollutant concentrations will be presented. (author)

Parametri za procena na kvalitetot na polietilenska i na polipropilenska ambalaza i na gumeni zatvoraci nameneti za farmacevtski preparati

Directory of Open Access Journals (Sweden)

Liljana Ugrinova

2002-03-01

Full Text Available Napraven e pregled na parametrite za procena na kvalitetot na polietilenska i na polipropilenska ambalaza i na gumeni zatvoraci nameneti za farmacevtski preparati. Za procena na kvalitetot na ispituvaniot materijal bea izvrseni fizicki, hemiski i bioloski ispituvanja spored postapkite dadeni vo Ph. Eur., DIN i spored DIN ISO standardite. Baranjata za kvalitet na ovoj vid ambalaza propisani spored Ph. Eur., DIN i DIN ISO standardite se razlikuvaat vo odnos na predvidenite parametri za fizicki, za hemiski i za bioloski ispituvanja. Isto taka, propisani se i razlicni granici na dozvoleno otstapuvanje na oddelni parametri.

Analiza parametrów geotechnicznych gruntów słabonośnych na przykładzie dokumentowania warunków budowy podłoża gruntowego dla inwestycji liniowej

Directory of Open Access Journals (Sweden)

Piotr Paprocki

2016-10-01

Full Text Available Kluczowe znaczenie dla bezpiecznego, a zarazem ekonomicznego zaprojektowania drogowej inwestycji liniowej mają informacje dotyczące obszaru i głębokości występowania gruntów słabonośnych, ich rodzaju (charakterystyki oraz wartości prawidłowo określonych parametrów odkształceniowych i wytrzymałościowych. W artykule przedstawiono analizy przeprowadzone w celu wyznaczenia wyprowadzonych wartości parametrów geotechnicznych słabonośnych gruntów organicznych, tj. torfów gytii i namułów, oraz korelacje ich cech fizycznych i mechanicznych występujących w podłożu projektowanej drogi ekspresowej S5 na odcinku Białe Błota – granica województw wielkopolskiego i kujawsko-pomorskiego. W analizie wykorzystano wartości parametrów geotechnicznych uzyskanych na podstawie badań terenowych (wiercenia, sondowania CPTU, sondowania sondą krzyżakową, badania dylatometrem Marchettiego oraz badań laboratoryjnych (badania w aparacie trójosiowym, testy edometryczne. W odniesieniu do badanych gruntów organicznych należy stwierdzić, że zawartość części organicznych ma istotny wpływ na inne cechy fizyczne gruntów, takie jak: wilgotność naturalna, gęstość objętościowa, oraz na parametry wytrzymałościowo-odkształceniowe i może być używana (obok rodzaju gruntu jako cecha charakteryzująca występujące w podłożu warstwy gruntów organicznych.

Dgroup: DG01493 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available utide, -natide ... D04121 ... Exenatide (JAN/USAN/INN) ... D06404 ... Liraglutide (USAN/INN); Liraglutide (genetical r...ecombination) (JAN) ... D09729 ... Lixisenatide (JAN/INN) ... D08843 ... Albiglutide (USAN); Albiglutide (genetical ...recombination) (JAN) ... D09889 ... Dulaglutide (USAN/INN); Dulaglutide (genetical re...combination) (JAN) ... D09723 ... Taspoglutide (USAN/INN) D10025 ... Semaglutide (USAN/INN); Semaglutide (genetical

Dgroup: DG01491 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available copolamine butylbromide (JP17) ... D01463 ... Diponium bromide (JAN/INN) D01491 ... Butropium bromide (JP17/INN) ... ...ide (JP17/INN) D01875 ... Tiquizium bromide (JAN/INN) ... D01929 ... Tiotropium bromide ...hydrate (JAN) ... D01946 ... Oxitropium bromide (JAN/INN) D01976 ... N-Methylscopolamine methylsulfate (JAN) ... D02212 ... Ipratropium... bromide (USAN); Ipratropium bromide hydrate (JP17) ... D02417 ... Flutropium bromide (JAN) D025...N/USAN/INN) ... D08838 ... Acotiamide hydrochloride (USAN); Acotiamide hydrochloride hydrate (JAN) ... D09402 ... Darotropium bromide (USAN/INN) Neuropsychiatric agent ...

Načrtovan porod na domu

OpenAIRE

Todorović, Tamara; Takač, Iztok

2017-01-01

Izhodišča: Porod na domu je sicer star toliko kot človeštvo, pa vendar v veliki večini srednje in visoko razvitih držav prevladuje mnenje, da so zaradi nepredvidljivosti zapletov porodnišnice najbolj varno okolje za rojevanje. Kljub temu obstaja peščica držav, v katerih je porod na domu integriran v sistem zdravstvenega varstva (npr. Nizozemska, Velika Britanija, Kanada). Pri porodih na domu ločimo nenačrtovane in načrtovane porode na domu, slednje pa lahko nadalje razdelimo še na porode s sp...

Dgroup: DG01501 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available N) ... D03077 ... Benazeprilat (USAN/INN) D03440 ... Ceronapril (USAN/INN) D03756 ... Indolapril hydrochloride (USAN) ... (USAN) ... D00383 ... Trandolapril (JAN/INN) ... DG00342 ... Spirapril ... D08529 ... Spirapril (INN) ... D03765 ... Spirapril ...USAN); Cilazapril hydrate (JP17) ... DG00341 ... Fosinopril ... D07992 ... Fosinopril (INN) ... D00622 ... Fosinopril sodium

Dgroup: DG01718 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01718 DGroup Drugs for addictive disorder ... DG01715 ... Drugs for nicotine dependence ... DG00994 ... Nicotine ... D03365 ... Nicotine (USP) ... D05156 ... Nicotine bitartrate (USAN) ... D05157 ... Nicotine polacrilex (USAN) ... DG00995 ... Varenicline ... D08669 ... Varenicline (INN) ... D06282 ... Varenicline tartrate (JAN/USAN) ... DG01716 ... Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) ... DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) ... D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) DG01717 ... Drugs for opioid dependence ... DG00820 ... Buprenorphine ... D07132 ... Buprenorphine (JAN/INN) ... D00836 ... Buprenorphine hydrochloride (JP17/USP) ... DG00999 ... Methadone ... D08195 ... Methadone (BAN) ... D02102 ... Methadone hydrochloride (JAN/USP) ... DG01000 ... Levacetylmethadol ... D04716 ... Levomethadyl acetate (USAN); Levacetylmethadol (INN) ... D00840 ... Levomethadyl acetate hydrochloride (USAN) ... DG01001 ... Lofexidine ... D08141 ... Lofexidine (INN) ... D04765 ... Lofexidine hydrochloride (USAN) ... DG01002 ... Levomethadone ... D08121 ... Levomethadone (INN) ... D08122 ... Levomethadone hydrochloride ... DG01003 ... Diamorphine ... D07286 ... Diamorphine (BAN) ... D07810 ... Diacetylmorphine hydrochloride ... D10250 ... Buprenorphine - naloxone mixt ... DG01151 ... Nalorphine ... D08247 ... Nalorphine (INN) ... D08248 ... Nalorphine hydrochloride (USP) ... DG01155 ... Naloxone ... D08249 ... Naloxone (INN) ... D01340 ... Naloxone hydrochloride (JP17/USP

Strategie przedsiębiorstwa prasowego w XXI wieku (internalizacja oraz obecność na rynku nowych technologii

Directory of Open Access Journals (Sweden)

Anita Uchańska

2011-05-01

Full Text Available Specyfika mediów polega na tym, że z jednej strony odgrywają szczególną rolę w systemie społecznym i politycznym, kształtując opinie społeczeństwa i biorąc udział w dyskusji na istotne tematy, z drugiej strony funkcjonują na zasadzie rynkowej. Z ekonomicznego punktu widzenia przedsiębiorstwa działające w branży medialnej prowadzą działalność gospodarczą nastawioną na zysk. Ich zadanie nie polega więc tylko na dostarczeniu społeczeństwu informacji i rozrywki, ale także na sprostaniu ostrej konkurencji na rynku. Przedsiębiorstwa medialne funkcjonują zatem na dwóch rynkach, będących podstawowymi źródłami ich przychodów – pierwszym z nich jest rynek odbiorców, czyli czytelników, słuchaczy, widzów, użytkowników Internetu czy nowych mediów, z drugiej zaś rynek reklamowy. Efektem ich działalności są dualne produkty medialne, przeznaczone dla odbiorców (treść oraz dla reklamodawców (powierzchnia reklamowa. Szczególnym typem przedsiębiorstwa medialnego jest wydawnictwo prasowe, które ze względu na obecną trudną sytuację na rynku prasy musi znaleźć właściwą formę działalności, aby odpowiedzieć na wyzwanie także ze strony Internetu oraz coraz bardziej popularnych nowych mediów. Dotychczasowy model działalności przedsiębiorstwa prasowego polegał przede wszystkim na wydawaniu prasy drukowanej, a jego rozwój obejmował poszerzanie portfolio o nowe tytuły i unowocześnianie procesów biznesowych oraz rozbudowę zaplecza produkcyjnego, a także inwestowanie w inne media (przy uwzględnieniu ograniczeń wynikających z przepisów prawa. Dodatkową możliwością była ekspansja zagraniczna, w postaci sprzedaży licencji, tworzenia wspólnych przedsięwzięć z lokalnym wydawcą lub zakładanie własnych spółek na obcych rynkach. Internacjonalizacja oraz koncentracja wertykalna i horyzontalna przyczyniły się do powstania konglomeratów medialnych, o dużym znaczeniu mi

Dgroup: DG01457 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available fine granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D0...zide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17...); Naftopidil orally disintegrating tablets (JP17) ... D01965 ... Silodosin (JP17/INN) ... D02995 ... Asenapine male

Dgroup: DG01635 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00896 ... Efavirenz (JAN/INN) ... D01615 ... Dexamethasone palmitate (JAN) ... D01832 ... Moda...finil (JAN/USAN/INN) ... D03012 ... Avasimibe (USAN/INN) D03215 ... Armodafinil (USAN/INN) ... D03669 ... Deferasir

Dgroup: DG01554 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01554 DGroup 5-Nitrofuran antiprotozoal nifur- ... D00830 ... Furazolidone (USP/INN) D... Nifuroxime (INN) D04714 ... Levofuraltadone (USAN/INN) D05165 ... Nifursemizone (USAN/INN) D05166 ... Nifursol (USAN) Antiparasitic ... Antiprotozoals ...

Dgroup: DG02018 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... C... ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flurocitabine (USAN/INN)

Drug: D08521 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08521 Drug Sodium aurothiosulfate (INN); Gold sodium thiosulfate, dihydrate; Cryt...ioro (TN) ... AuS4O6. 3Na. 2H2O D08521.gif ... Anti-inflammatory ... DG01912 ... Gold preparations ... DG01985 ... Disease m...odifying anti-rheumatic drugs (DMARDs) ... DG01912 ... Gold preparations ATC code: M01CB02 ... Gold preparation ... CAS: 10210-36-3 PubChem: 96025206 ChEMBL: CHEMBL3833379 ...

Dgroup: DG01958 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available USP) ... D03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG...Enocitabine (JAN/INN) ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flu

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

Dgroup: DG01439 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... Cytarabine ... D00168 ... ...tabine hydrochloride (JAN) D04134 ... Fazarabine (USAN/INN) D04233 ... Flurocitabine (USAN/INN) D06100 ... Tezacitabi

Dgroup: DG01458 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01458 DGroup Carbapenem -penem DG01458.gif DG00591 ... Meropenem ... D08185 ... Meropenem (INN) ... D02222 ... Meropene...m (USP); Meropenem hydrate (JP17) ... DG00592 ... Ertapenem ... D07908 ... Ertapenem (INN) ... D04049 ... Ertapene...m sodium (USAN) ... DG00593 ... Doripenem ... D03895 ... Doripenem (USAN/INN) ... D01836 ... Doripenem hydr...ate (JAN) ... DG01212 ... Imipenem ... D04515 ... Imipenem (INN) ... D00206 ... Imipenem (USP); Imipene...m hydrate (JP17) D01048 ... Panipenem (JP17/INN) D01057 ... Biapenem (JAN/USAN/INN) ... D01058 ... Lenapenem hyd

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Dokumenty piśmiennicze w grach komputerowych. Funkcje i forma

OpenAIRE

Przemysław Ciszek

2012-01-01

Abstrakt w j. polskim:Książki i inne dokumenty piśmiennicze (czasopisma, pamiętniki czy listy) występują w wielu grach wideo. Szczególnie często można je znaleźć w grach cRPG (fabularne gry komputerowe) i przygodowych, które to pozwalają na dużą interakcję ze światem gry. Książki mogą pełnić w grach podobne funkcje jak w świecie rzeczywistym – funkcję poznawczą i rozrywkową. Książki i dokumenty mogą zawierać treść dostępną dla gracza, ale wiele z nich oddziałuje jedynie na awatara w grze. Eng...

Dgroup: DG01716 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01716 DGroup Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BB Drugs of addictive disorder ...

Na+-stimulated ATPase of alkaliphilic halotolerant cyanobacterium Aphanothece halophytica translocates Na+ into proteoliposomes via Na+ uniport mechanism

Directory of Open Access Journals (Sweden)

Soontharapirakkul Kanteera

2010-08-01

Full Text Available Abstract Background When cells are exposed to high salinity conditions, they develop a mechanism to extrude excess Na+ from cells to maintain the cytoplasmic Na+ concentration. Until now, the ATPase involved in Na+ transport in cyanobacteria has not been characterized. Here, the characterization of ATPase and its role in Na+ transport of alkaliphilic halotolerant Aphanothece halophytica were investigated to understand the survival mechanism of A. halophytica under high salinity conditions. Results The purified enzyme catalyzed the hydrolysis of ATP in the presence of Na+ but not K+, Li+ and Ca2+. The apparent Km values for Na+ and ATP were 2.0 and 1.2 mM, respectively. The enzyme is likely the F1F0-ATPase based on the usual subunit pattern and the protection against N,N'-dicyclohexylcarbodiimide inhibition of ATPase activity by Na+ in a pH-dependent manner. Proteoliposomes reconstituted with the purified enzyme could take up Na+ upon the addition of ATP. The apparent Km values for this uptake were 3.3 and 0.5 mM for Na+ and ATP, respectively. The mechanism of Na+ transport mediated by Na+-stimulated ATPase in A. halophytica was revealed. Using acridine orange as a probe, alkalization of the lumen of proteoliposomes reconstituted with Na+-stimulated ATPase was observed upon the addition of ATP with Na+ but not with K+, Li+ and Ca2+. The Na+- and ATP-dependent alkalization of the proteoliposome lumen was stimulated by carbonyl cyanide m - chlorophenylhydrazone (CCCP but was inhibited by a permeant anion nitrate. The proteoliposomes showed both ATPase activity and ATP-dependent Na+ uptake activity. The uptake of Na+ was enhanced by CCCP and nitrate. On the other hand, both CCCP and nitrate were shown to dissipate the preformed electric potential generated by Na+-stimulated ATPase of the proteoliposomes. Conclusion The data demonstrate that Na+-stimulated ATPase from A. halophytica, a likely member of F-type ATPase, functions as an electrogenic Na

Dgroup: DG01620 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01620 DGroup Tamoxifene-type antineoplastic -ifen(e) ... DG00734 ... Tamoxifen ... D08559 ... Tam...oxifen (INN) ... D00966 ... Tamoxifen citrate (JP17/USP) ... DG00735 ... Toremifene ... D08620 ... Toremifene (INN) ... D0...USAN/INN) D09380 ... Sivifene (USAN/INN) Other ... DG01619 ... Clomifene and tamoxifen derivative ... Antiestrogens or e

Polarization dependence of Na* + Na* associative ionization revisited

NARCIS (Netherlands)

Meijer, H.A.J.; Meulen, H.P. v.d.; Morgenstern, R.; Hertel, I.V.; Meyer, E.; Witte, R.

1986-01-01

The dependence of the associative ionization process Na 3 2P3/2 + Na 3 2P3/2 → Na2+ + e- on the polarization of the laser light used for Na excitation was independently investigated in Utrecht and Berlin. The purpose of this paper is to clarify discrepancies between two other earlier experimental

Dgroup: DG01465 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08064 ... Ifenprodil (INN) ... D01445 ... Ifenprodil tartrate (JP17); Ifenprodil tartrate fine granules (JP17); Ifenprodil tartrate tablet...NN) ... D00560 ... Pimozide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... D019

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Pseudo-ternary phase diagram in the Na2O-Na2O2-NaOH system

International Nuclear Information System (INIS)

Saito, Jun-ichi; Tendo, Masayuki; Aoto, Kazumi

1997-10-01

Generally, the phase diagrams are always used to understand the present state of compounds at certain temperature. In order to understand the corrosion behavior of structural material for FBR by main sodium compounds (Na 2 O, Na 2 O 2 and NaOH), it is very important to comprehend the phase diagrams of their compounds. However, only Na 2 O-NaOH pseudo-binary phase diagram had been investigated previously in this system. There is no study of other pseudo-binary or ternary phase diagrams in the Na 2 O-Na 2 O 2 -NaOH system. In this study, in order to clarify the present states of their compounds at certain temperatures, the pseudo-binary and ternary phase diagrams in the Na 2 O-Na 2 O 2 -NaOH system were prepared. A series of thermal analyses with binary and ternary component system has been carried out using the differential scanning calorimetry (DSC). The liquidus temperature and ternary eutectic temperatures were confirmed by these measurements. The beneficial indications for constructing phase diagrams were obtained from these experiments. On the basis of these results, the interaction parameters between compounds which were utilized for the Thermo-Calc calculation were optimized. Thermo-Calc is one of thermodynamic calculation software. Consequently the accurate pseudo-binary and ternary phase diagrams were indicated using the optimized parameters. (author)

Dgroup: DG01936 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01936 DGroup TNF inhibitor ... D00742 ... Etanercept (USAN/INN); Etanercept (genetica...l recombination) (JAN); Etanercept (genetical recombination) [etanercept biosimilar 1] (JAN) ... D02598 ... Infl...iximab (USAN/INN); Infliximab (genetical recombination) (JAN); Infliximab (genetical recombination) [Inflixi...mab biosimilar1] (JAN); Infliximab (genetical recombination) [Infliximab biosimil...ar2] (JAN) ... D07436 ... Afelimomab (INN) D02597 ... Adalimumab (USAN/INN); Adalimumab (genetical recombination) (

Extracellular Na+ levels regulate formation and activity of the NaX/alpha1-Na+/K+-ATPase complex in neuronal cells.

Directory of Open Access Journals (Sweden)

Emmanuelle eBerret

2014-12-01

Full Text Available MnPO neurons play a critical role in hydromineral homeostasis regulation by acting as sensors of extracellular sodium concentration ([Na+]out. The mechanism underlying Na+-sensing involves Na+-flow through the NaX channel, directly regulated by the Na+/K+-ATPase α1-isoform which controls Na+-influx by modulating channel permeability. Together, these two partners form a complex involved in the regulation of intracellular sodium ([Na+]in. Here we aim to determine whether environmental changes in Na+ could actively modulate the NaX/Na+/K+-ATPase complex activity.We investigated the complex activity using patch-clamp recordings from rat MnPO neurons and Neuro2a cells. When the rats were fed with a high-salt-diet, or the [Na+] in the culture medium was increased, the activity of the complex was up-regulated. In contrast, drop in environmental [Na+] decreased the activity of the complex. Interestingly under hypernatremic condition, the colocalization rate and protein level of both partners were up-regulated. Under hyponatremic condition, only NaX protein expression was increased and the level of NaX/Na+/K+-ATPase remained unaltered. This unbalance between NaX and Na+/K+-ATPase pump proportion would induce a bigger portion of Na+/K+-ATPase-control-free NaX channel. Thus we suggest that hypernatremic environment increases NaX/Na+/K+-ATPase α1-isoform activity by increasing the number of both partners and their colocalization rate, whereas hyponatremic environment down-regulates complex activity via a decrease in the relative number of NaX channels controlled by the pump.

Dgroup: DG01645 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available done (INN) ... D08122 ... Levomethadone hydrochloride DG01015 ... Hydroxychloroquine ... D08050 ... Hydroxychloroquine (INN) ... D02114 ... Hydroxychloroq...uine sulfate (JAN/USP) ... DG01021 ... Halofantrine ... D08033 ... Halofantrine (INN) ... D02485

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

A Study of the Distribution of Sodium Cations in the Zeolites NaX, NaY and ZnNaY Using Carbon Monoxide Adsorption and 23Na NMR Techniques

Science.gov (United States)

Seidel, A.; Boddenberg, B.

1995-03-01

The zeolites NaX, NaY, Zn(55)NaY, and Zn(74)NaY were investigated by means of carbon monoxide adsorption and with static and magic angle spinning (MAS) 23Na NMR spectroscopy. The Na+ distribution between the sodalite (ß)- and supercages of the fully hydrated zeolites NaX and NaY were found to agree with XRD results. In the hydrated zinc-exchanged zeolites the Na+ ions almost exclusively populate the ß-cages. The adsorption isotherms of CO in the dehydrated zeolites were analyzed quantitatively to yield the concentrations of Na+ residing in the supercages. The measured static and MAS 23Na NMR spectra were analyzed by comparing their widths and shapes with simulated central transition patterns and yield, inter alia, the concentrations of Na+ associated with the spectrum components. Arguments are put forward that 23Na NMR of dehydrated zeolites is well suited to distinguish Na+ cations in highly symmetric environments and mobile Na+ species from others located on general positions, but further resolution is hardly feasible.

HCO3(-)-coupled Na+ influx is a major determinant of Na+ turnover and Na+/K+ pump activity in rat hepatocytes

International Nuclear Information System (INIS)

Fitz, J.G.; Lidofsky, S.D.; Weisiger, R.A.; Xie, M.H.; Cochran, M.; Grotmol, T.; Scharschmidt, B.F.

1991-01-01

Recent studies in hepatocytes indicate that Na(+)-coupled HCO3- transport contributes importantly to regulation of intracellular pH and membrane HCO3- transport. However, the direction of net coupled Na+ and HCO3- movement and the effect of HCO3- on Na+ turnover and Na+/K+ pump activity are not known. In these studies, the effect of HCO3- on Na+ influx and turnover were measured in primary rat hepatocyte cultures with 22Na+, and [Na+]i was measured in single hepatocytes using the Na(+)-sensitive fluorochrome SBFI. Na+/K+ pump activity was measured in intact perfused rat liver and hepatocyte monolayers as Na(+)-dependent or ouabain-suppressible 86Rb uptake, and was measured in single hepatocytes as the effect of transient pump inhibition by removal of extracellular K+ on membrane potential difference (PD) and [Na+]i. In hepatocyte monolayers, HCO3- increased 22Na+ entry and turnover rates by 50-65%, without measurably altering 22Na+ pool size or cell volume, and HCO3- also increased Na+/K+ pump activity by 70%. In single cells, exposure to HCO3- produced an abrupt and sustained rise in [Na+]i from approximately 8 to 12 mM. Na+/K+ pump activity assessed in single cells by PD excursions during transient K+ removal increased congruent to 2.5-fold in the presence of HCO3-, and the rise in [Na+]i produced by inhibition of the Na+/K+ pump was similarly increased congruent to 2.5-fold in the presence of HCO3-. In intact perfused rat liver, HCO3- increased both Na+/K+ pump activity and O2 consumption. These findings indicate that, in hepatocytes, net coupled Na+ and HCO3- movement is inward and represents a major determinant of Na+ influx and Na+/K+ pump activity. About half of hepatic Na+/K+ pump activity appears dedicated to recycling Na+ entering in conjunction with HCO3- to maintain [Na+]i within the physiologic range

Dgroup: DG02000 [KEGG MEDICUS

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The effect of Na vapor on the Na content of chondrules

Science.gov (United States)

Lewis, R. Dean; Lofgren, Gary E.; Franzen, Hugo F.; Windom, Kenneth E.

1993-01-01

Chondrules contain higher concentrations of volatiles (Na) than expected for melt droplets in the solar nebula. Recent studies have proposed that chondrules may have formed under non-canonical nebular conditions such as in particle/gas-rich clumps. Such chondrule formation areas may have contained significant Na vapor. To test the hypothesis of whether a Na-rich vapor would minimize Na volatilization reaction rates in a chondrule analog and maintain the Na value of the melt, experiments were designed where a Na-rich vapor could be maintained around the sample. A starting material with a melting point lower that typical chondrules was required to keep the logistics of working with Na volatilization from NaCl within the realm of feasibility. The Knippa basalt, a MgO-rich alkali olivine basalt with a melting temperature of 1325 +/- 5 C and a Na2O content of 3.05 wt%, was used as the chondrule analog. Experiments were conducted in a 1 atm, gas-mixing furnace with the fO2 controlled by a CO/CO2 gas mixture and fixed at the I-W buffer curve. To determine the extent of Na loss from the sample, initial experiments were conducted at high temperatures (1300 C - 1350 C) for duration of up to 72 h without a Na-rich vapor present. Almost all (up to 98%) Na was volatilized in runs of 72 h. Subsequent trials were conducted at 1330 C for 16 h in the presence of a Na-rich vapor, supplied by a NaCl-filled crucible placed in the bottom of the furnace. Succeeding Knudsen cell weight-loss mass-spectrometry analysis of NaCl determined the P(sub Na) for these experimental conditions to be in the 10(exp -6) atm range. This value is considered high for nebula conditions but is still plausible for non-canonical environments. In these trials the Na2O content of the glass was maintained or in some cases increased; Na2O values ranged from 2.62% wt to 4.37% wt. The Na content of chondrules may be controlled by the Na vapor pressure in the chondrule formation region. Most heating events capable

Dgroup: DG01752 [KEGG MEDICUS

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Na/K pump inactivation, subsarcolemmal Na measurements, and cytoplasmic ion turnover kinetics contradict restricted Na spaces in murine cardiac myocytes.

Science.gov (United States)

Lu, Fang-Min; Hilgemann, Donald W

2017-07-03

Decades ago, it was proposed that Na transport in cardiac myocytes is modulated by large changes in cytoplasmic Na concentration within restricted subsarcolemmal spaces. Here, we probe this hypothesis for Na/K pumps by generating constitutive transsarcolemmal Na flux with the Na channel opener veratridine in whole-cell patch-clamp recordings. Using 25 mM Na in the patch pipette, pump currents decay strongly during continuous activation by extracellular K (τ, ∼2 s). In contradiction to depletion hypotheses, the decay becomes stronger when pump currents are decreased by hyperpolarization. Na channel currents are nearly unchanged by pump activity in these conditions, and conversely, continuous Na currents up to 0.5 nA in magnitude have negligible effects on pump currents. These outcomes are even more pronounced using 50 mM Li as a cytoplasmic Na congener. Thus, the Na/K pump current decay reflects mostly an inactivation mechanism that immobilizes Na/K pump charge movements, not cytoplasmic Na depletion. When channel currents are increased beyond 1 nA, models with unrestricted subsarcolemmal diffusion accurately predict current decay (τ ∼15 s) and reversal potential shifts observed for Na, Li, and K currents through Na channels opened by veratridine, as well as for Na, K, Cs, Li, and Cl currents recorded in nystatin-permeabilized myocytes. Ion concentrations in the pipette tip (i.e., access conductance) track without appreciable delay the current changes caused by sarcolemmal ion flux. Importantly, cytoplasmic mixing volumes, calculated from current decay kinetics, increase and decrease as expected with osmolarity changes (τ >30 s). Na/K pump current run-down over 20 min reflects a failure of pumps to recover from inactivation. Simulations reveal that pump inactivation coupled with Na-activated recovery enhances the rapidity and effectivity of Na homeostasis in cardiac myocytes. In conclusion, an autoregulatory mechanism enhances cardiac Na/K pump activity when

Dgroup: DG01642 [KEGG MEDICUS

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Full Text Available ... Taranabant (USAN/INN) D09349 ... Ibipinabant (USAN/INN) D10314 ... Giminabant (USAN/INN) Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ATC code: A08AX Antiobesity agents CNR1 [HSA:1268] [KO:K04277] ...

Na+/Ca2+ exchange and Na+/K+-ATPase in the heart

Science.gov (United States)

Shattock, Michael J; Ottolia, Michela; Bers, Donald M; Blaustein, Mordecai P; Boguslavskyi, Andrii; Bossuyt, Julie; Bridge, John H B; Chen-Izu, Ye; Clancy, Colleen E; Edwards, Andrew; Goldhaber, Joshua; Kaplan, Jack; Lingrel, Jerry B; Pavlovic, Davor; Philipson, Kenneth; Sipido, Karin R; Xie, Zi-Jian

2015-01-01

This paper is the third in a series of reviews published in this issue resulting from the University of California Davis Cardiovascular Symposium 2014: Systems approach to understanding cardiac excitation–contraction coupling and arrhythmias: Na+ channel and Na+ transport. The goal of the symposium was to bring together experts in the field to discuss points of consensus and controversy on the topic of sodium in the heart. The present review focuses on cardiac Na+/Ca2+ exchange (NCX) and Na+/K+-ATPase (NKA). While the relevance of Ca2+ homeostasis in cardiac function has been extensively investigated, the role of Na+ regulation in shaping heart function is often overlooked. Small changes in the cytoplasmic Na+ content have multiple effects on the heart by influencing intracellular Ca2+ and pH levels thereby modulating heart contractility. Therefore it is essential for heart cells to maintain Na+ homeostasis. Among the proteins that accomplish this task are the Na+/Ca2+ exchanger (NCX) and the Na+/K+ pump (NKA). By transporting three Na+ ions into the cytoplasm in exchange for one Ca2+ moved out, NCX is one of the main Na+ influx mechanisms in cardiomyocytes. Acting in the opposite direction, NKA moves Na+ ions from the cytoplasm to the extracellular space against their gradient by utilizing the energy released from ATP hydrolysis. A fine balance between these two processes controls the net amount of intracellular Na+ and aberrations in either of these two systems can have a large impact on cardiac contractility. Due to the relevant role of these two proteins in Na+ homeostasis, the emphasis of this review is on recent developments regarding the cardiac Na+/Ca2+ exchanger (NCX1) and Na+/K+ pump and the controversies that still persist in the field. PMID:25772291

Flexibility in Management of Modernization in Construction - Electrical Works/ Elastyczność W Zarządzaniu Modernizacją Obiektów Budowlanych Na Przykładzie Robót Elektrycznych

Science.gov (United States)

Nowotarski, Piotr; Pasławski, Jerzy

2015-06-01

The article presents the general principles of flexible approach, illustrated with case study regarding flexibility in modernization. Flexibility is understood in the present case as a skilful adaptation to changes in the dynamically changing environment. The essence of flexibility approach is being staged to make decisions based on environmental and process monitoring in progress. Presented case study of upgrading the electrical system in the multi-family housing in the common area is based on step by step procedure responding to damage state of this system. Simple analysis is based on cost comparison but there are other criteria (environmental, social etc.) and conflict solving situations taken into account in presented paper. Artykuł prezentuje możliwość zastosowania elastyczności w modernizacjach istniejących obiektów budowlanych na przykładzie instalacji oświetleniowej. Elastyczność jest rozumiana w tym przypadku jako umiejętne dostosowanie się do zmian w dynamicznie zmieniającym się środowisku. Istotą podejścia elastycznego jest podejmowanie odpowiednich decyzji w odpowiednim czasie opartych na monitoringu środowiska i procesu w toku. Prezentowane studium przypadku modernizacji instalacji elektrycznej w budownictwie wielorodzinnym w częściach wspólnych obiektu (korytarze, klatki schodowe, hala garażowa) opiera się na wymianie i modernizacji tylko tych punktów, które w danym momencie ulegają awarii. Prosta analiza oby typów modernizacji opiera się na porównaniu kosztów, natomiast trzeba zaznaczyć, że możliwe są także inne kryteria (środowiskowe, konfliktu społecznego, itp.), które będą przedmiotem kolejnych publikacji. Zastąpienie tradycyjnych żarówek rozwiązaniami opartymi na technologii LED z zastosowaniem czujników ruchu może prowadzić do znacznych oszczędności, ale może też oznaczać obniżenie komfortu dla użytkowników (np. dla osób starszych, którym jeden cykl działania oświetlenia nie jest

Dgroup: DG01466 [KEGG MEDICUS

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Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

Science.gov (United States)

Polash, Md. Mobarak Hossain; Alam, M. Shah; Biswas, Saumya

2018-03-01

A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 Å well layer of InN, 15 Å barrier layer of In0.25Ga0.75N, and 54 Å separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k · p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 × 1027 s - 1 cm - 3 eV - 1 at 1288.21 nm with the carrier density of 5 × 1019 cm - 3. Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 A cm - 2 and 6.35 × 1027 s - 1 cm - 3, respectively, while the TE-polarized optical gain of the structure is 3872.1 cm - 1 at 1301.7 nm.

Altered Na+ transport after an intracellular alpha-subunit deletion reveals strict external sequential release of Na+ from the Na/K pump.

Science.gov (United States)

Yaragatupalli, Siddhartha; Olivera, J Fernando; Gatto, Craig; Artigas, Pablo

2009-09-08

The Na/K pump actively exports 3 Na(+) in exchange for 2 K(+) across the plasmalemma of animal cells. As in other P-type ATPases, pump function is more effective when the relative affinity for transported ions is altered as the ion binding sites alternate between opposite sides of the membrane. Deletion of the five C-terminal residues from the alpha-subunit diminishes internal Na(+) (Na(i)(+)) affinity approximately 25-fold [Morth et al. (2007) Nature 450:1043-1049]. Because external Na(+) (Na(o)(+)) binding is voltage-dependent, we studied the reactions involving this process by using two-electrode and inside-out patch voltage clamp in normal and truncated (DeltaKESYY) Xenopus-alpha1 pumps expressed in oocytes. We observed that DeltaKESYY (i) decreased both Na(o)(+) and Na(i)(+) apparent affinities in the absence of K(o)(+), and (ii) did not affect apparent Na(o)(+) affinity at high K(o)(+). These results support a model of strict sequential external release of Na(+) ions, where the Na(+)-exclusive site releases Na(+) before the sites shared with K(+) and the DeltaKESYY deletion only reduces Na(o)(+) affinity at the shared sites. Moreover, at nonsaturating K(o)(+), DeltaKESYY induced an inward flow of Na(+) through Na/K pumps at negative potentials. Guanidinium(+) can also permeate truncated pumps, whereas N-methyl-D-glucamine cannot. Because guanidinium(o)(+) can also traverse normal Na/K pumps in the absence of both Na(o)(+) and K(o)(+) and can also inhibit Na/K pump currents in a Na(+)-like voltage-dependent manner, we conclude that the normal pathway transited by the first externally released Na(+) is large enough to accommodate guanidinium(+).

Dgroup: DG01986 [KEGG MEDICUS

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Active transport of Na+ by reconstituted Na,K-ATPase

International Nuclear Information System (INIS)

Boldyrev, A.A.; Svinukhova, I.A.

1987-01-01

The ability of ATP, CTP, ITP, GTP, and UTP to support ouabain-sensitive accumulation of Na + by proteoliposomes with a reconstituted Na/K-pump was investigated. At a low [Na + ]/[K + ] ratio in the medium (20 mM/50 mM), a correlation is observed between the proton-accepting capacity of the nucleotide and its effectiveness as a substrate of active transport. To test the hypothesis of the importance of the presence of a negative charge in the 1-position of the purine (3-pyrimidine) base of the nucleotide for mutual transitions between the Na- and K-conformations of Na,K-ATPase they used two analogs of ATP: N 1 -hydroxy-ATP, possessing proton acceptor capacity, and N 1 -methoxy-ATP, in the molecule of which the negative charge is quenched by a methyl group. The first substrate supports active accumulation of Na + in proteoliposomes at the same rate as ATP, whereas the second substrate is relatively ineffective

Investigation on U - O - Na, Pu - O - Na and U,Pu - O - Na phase diagrams

International Nuclear Information System (INIS)

Pillon, S.

1989-03-01

The thermochemical interaction between the nuclear fuel (uranium and plutonium mixed oxides) and the sodium has been investigated and particularly the three phase diagrams: U - O - Na; Pu - O - Na; U,Pu - O - Na. High temperature neutron diffraction, microcalorimetry and powder X-ray diffraction were used for the characterization of the compounds synthetized. This study allowed to complete the knowledge about each of these diagrams and to measure some physical and thermal properties on the compounds. The limits on the modelization of the fuel-sodium interaction are discussed from the results of the UO 2 - Na reaction [fr

Measurement of exchangeable sodium: 22Na or 24Na

International Nuclear Information System (INIS)

Smith, T.; Edmonds, C.J.

1987-01-01

A case is made for the use of 22 Na in low activities in preference to 24 Na for routine diagnostic estimation of exchangeable sodium, and is based chiefly on considerations of availability, cost and radiation dosimetry. A method in which only 37 kBq (1 μCi) 22 Na is administered orally is shown to be sufficiently accurate and to possess distinct advantages in terms of cost and convenience with a committed radiation dose no greater than that for a measurement using 24 Na. (author)

A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

Science.gov (United States)

Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

2016-04-01

Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

AGARD Index of Publications 1974-1976

Science.gov (United States)

1977-09-01

Now Mexico . When possible, subusquent flight test darmonstrations Author rsults were compared with thirrse obtained by other InvestigatorsIni other...lEngland). TOSR ik.0M oe .Tng n .S INn BLO ARAAYS THE A. IG HbOFrn Mn A INTDGCuTEmDeg fIRC LageITal TORIllk.DM.Je R aa adN INg nA R ALO AAAY T HE...with disease is diagnosed as tuberculosis , even more so since Camlorniuic able Disease Sell t975 5 p) rafs (For availability tuberrcuiinerion may

Suppression of Na interstitials in Na-F codoped ZnO

Science.gov (United States)

Huo, Wenxing; Mei, Zengxia; Tang, Aihua; Liang, Huili; Du, Xiaolong

2018-04-01

Controlling the formation of interstitial Na (Nai) self-compensating defects has been a long-term physics problem for effective Na doping in ZnO. Herein, we present an experimental approach to the suppression of Nai defects in ZnO via Na and F codoping under an oxygen-rich condition during the molecular beam epitaxy growth process. It is found that the incorporation of such large numbers of Na and F dopants (˜1020 cm-3) does not cause an obvious influence on the lattice parameters. Hall-effect measurements demonstrate that F doping efficiently raises the Fermi level (EF) of ZnO films, which is expected to make the formation energy of Nai and NaZn increase and decrease, respectively. Most of the Na atoms occupy the substitutional Zn sites, and the formation of Nai is suppressed consequently. Secondary ion mass spectrometry measurements reveal that F and Na atoms are tightly bonded together due to their strong Coulomb interaction. The enhanced deep level emission (DLE) in ZnO:Na-F is ascribed to the considerable amount of isolated Zn vacancy (VZn) defects induced by the elevated EF and the formation of neutral (" separators="| FO + - Na Zn - ) 0 complexes. On the other hand, formation of (" separators="| FO + - VZn 2 - ) - complexes in ZnO:F exhausts most of the isolated Zn vacancies, leading to the disappearance of the DLE band.

OGLAŠEVANJE NA DRUŽBENIH OMREŽJIH NA PRIMERU FACEBOOKA

OpenAIRE

Novak, Martina

2012-01-01

V diplomskem delu obravnavamo družbene medije kot novo priložnost za promocijo in oglaševanje podjetij. Spoznali smo družbena omrežja na splošno in nekaj teh, ki jih uporabljamo tudi v Sloveniji na kratko predstavili. Podrobneje smo se osredotočili na družbeno omrežje Facebook, predvsem na samo spletno stran, njen izgled in storitve, ki jih ponuja uporabnikom. V nalogi je podrobneje opisan Facebook kot orodje za uporabo oglaševanja. Spoznali smo brezplačne in plačljive načine promocije in ogl...

Na+,K+-ATPase Na+ affinity in rat skeletal muscle fiber types

DEFF Research Database (Denmark)

Kristensen, Michael; Juel, Carsten

2010-01-01

Previous studies in expression systems have found different ion activation of the Na(+)/K(+)-ATPase isozymes, which suggest that different muscles have different ion affinities. The rate of ATP hydrolysis was used to quantify Na(+),K(+)-ATPase activity, and the Na(+) affinity of Na(+),K(+)-ATPase...

Crystal structure of Na+, K(+)-ATPase in the Na(+)-bound state.

Science.gov (United States)

Nyblom, Maria; Poulsen, Hanne; Gourdon, Pontus; Reinhard, Linda; Andersson, Magnus; Lindahl, Erik; Fedosova, Natalya; Nissen, Poul

2013-10-04

The Na(+), K(+)-adenosine triphosphatase (ATPase) maintains the electrochemical gradients of Na(+) and K(+) across the plasma membrane--a prerequisite for electrical excitability and secondary transport. Hitherto, structural information has been limited to K(+)-bound or ouabain-blocked forms. We present the crystal structure of a Na(+)-bound Na(+), K(+)-ATPase as determined at 4.3 Å resolution. Compared with the K(+)-bound form, large conformational changes are observed in the α subunit whereas the β and γ subunit structures are maintained. The locations of the three Na(+) sites are indicated with the unique site III at the recently suggested IIIb, as further supported by electrophysiological studies on leak currents. Extracellular release of the third Na(+) from IIIb through IIIa, followed by exchange of Na(+) for K(+) at sites I and II, is suggested.

Advanced Field Investigations of Screw Piles and Columns / Zaawansowane Badania Terenowe Pali I Kolumn Wkrecanych

Directory of Open Access Journals (Sweden)

Krasiński A.

2011-03-01

Full Text Available Dla potrzeb projektu badawczego „Nosnosc i praca w gruncie pali wkrecanych” finansowanego przez Ministerstwo Nauki i Szkolnictwa Wyzszego - projekt nr N N506 369234 rozpoczeto badania terenowe pali i kolumn wkrecanych. W artykule opisano badania na pierwszym zorganizowanym do tego celu poletku doswiadczalnym. Przeprowadzono na nim badania trzech pali wkrecanych z uzyciem specjalnego systemu pomiarowego oraz w połaczeniu z badaniami podłoza gruntowego za pomoca sondowan CPTU oraz z pomiarami parametrów wykonawstwa pali (moment wkrecajacy i inne. Celem badan terenowych i całego projektu badawczego jest rozpoznanie charakteru pracy pali wkrecanych w gruncie oraz okreslenie zaleznosci pomiedzy wynikami sondowan CPT a oporami wkrecania i nosnoscia pali wkrecanych. W artykule zawarto opis przebiegu oraz podstawowe wyniki wykonanych badan.

Klozapina: między skutecznością a bezpieczeństwem

Directory of Open Access Journals (Sweden)

Tomasz Sobów

2015-07-01

Full Text Available Klozapina, choć uważana za bardzo skuteczny lek przeciwpsychotyczny, jest stosowana rzadziej, niż wynikałoby z przesłanek klinicznych wspierających jej stosowanie. Co najmniej 1/3 chorych ze schizofrenią spełnia kliniczne kryteria lekooporności, charakteryzuje się wysokim ryzykiem samobójstwa lub reaguje nasilonymi objawami pozapiramidowymi na inne leki przeciwpsychotyczne. Możliwym powodem relatywnie rzadkiego sięgania po klozapinę w praktyce klinicznej jest postrzeganie leku jako obarczonego poważnymi objawami niepożądanymi. Agranulocytoza i inne dyskrazje krwi są dobrze znane, a zasady prewencji – uporządkowane zaleceniami. O innych objawach niepożądanych, również tych potencjalnie niebezpiecznych (kardiomiopatia, zapalenia mięśnia sercowego, niedrożność jelit czy drgawki wiadomo mniej. Ryzyko wystąpienia groźnych powikłań kuracji klozapiną można jednak zminimalizować, a same powikłania – wykrywać i leczyć, pod warunkiem zachowania czujności diagnostycznej. Świadomość ryzyka i korzyści związanych ze stosowaniem klozapiny to warunek konieczny skutecznego i bezpiecznego użycia tego leku oraz pełnego wykorzystania jego niezwykłych właściwości.

Meltability in system of K2TaF7-NaF-NaCl-KCl

International Nuclear Information System (INIS)

Kartsev, V.E.; Kovalev, F.V.; Korshunov, B.G.

1975-01-01

Thermographic and visual-polythermal techniques were used to study the meltability in K 2 TaF 7 -NaF-NaCl-KCl system. The tetrahedron-forming sections NaF-NaCl-K 2 TaF 7 xKCl and NaF-K 2 TaF 7 xKCl-2K 2 TaF 7 xNaCl divide the concentration tetrahedron into three particular tetrahedra: NaF-K 2 TaF 7 xKCl-2K 2 TaF 7 xNaCl-K 2 TaF 7 , NaF-NaCl-K 2 TaF 7 xKCl-2K 2 TaF 7 xaCl, and NaF-NaCl-KCl-K 2 TaF 7 xKCl. Non-variant equilibrium points in all of the particular four-component systems have been determined

Active transport of Na/sup +/ by reconstituted Na,K-ATPase

Energy Technology Data Exchange (ETDEWEB)

Boldyrev, A.A.; Svinukhova, I.A.

1987-02-20

The ability of ATP, CTP, ITP, GTP, and UTP to support ouabain-sensitive accumulation of Na/sup +/ by proteoliposomes with a reconstituted Na/K-pump was investigated. At a low (Na/sup +/)/(K/sup +/) ratio in the medium (20 mM/50 mM), a correlation is observed between the proton-accepting capacity of the nucleotide and its effectiveness as a substrate of active transport. To test the hypothesis of the importance of the presence of a negative charge in the 1-position of the purine (3-pyrimidine) base of the nucleotide for mutual transitions between the Na- and K-conformations of Na,K-ATPase they used two analogs of ATP: N/sub 1/-hydroxy-ATP, possessing proton acceptor capacity, and N/sub 1/-methoxy-ATP, in the molecule of which the negative charge is quenched by a methyl group. The first substrate supports active accumulation of Na/sup +/ in proteoliposomes at the same rate as ATP, whereas the second substrate is relatively ineffective.

Relationship between intracellular Na+ concentration and reduced Na+ affinity in Na+,K+-ATPase mutants causing neurological disease

DEFF Research Database (Denmark)

Toustrup-Jensen, Mads Schak; Einholm, Anja P.; Schack, Vivien

The neurological disorders familial hemiplegic migraine type 2 (FHM2), alternating hemiplegia of childhood (AHC), and rapid-onset dystonia parkinsonism (RDP) are caused by mutations of Na+,K+-ATPase α2 and α3 isoforms, expressed in glial and neuronal cells, respectively. Although these disorders......, addressing the question to what extent they cause a change of the intracellular Na+ and K+ concentrations ([Na+]i and [K+]i) in COS cells. C-terminal extension mutants generally showed dramatically reduced Na+ affinity without disturbance of K+ binding, as did other RDP mutants. No phosphorylation from ATP...

MOŽNOSTI VSTOPA NA TUJE TRGE NA PRIMERU PODJETJA AWOODTURE

OpenAIRE

Orličnik, Urša

2014-01-01

Danes pojavljanje podjetja samo na domačem trgu ni več dovolj. Spremembe okolja, naraščanje konkurence ter hiter tehnološki napredek, silijo podjetja k nenehnemu prilagajanju in iskanju novih priložnosti tako na domačem kot tudi na tujem trgu. Internacionalizacija podjetja tako postaja vedno bolj pomemembna za preživetje podjetja. Internacionalizacija se v najširšem smislu nanaša na vse oblike mednarodnega ekonomskega sodelovanja. Je dinamičen proces, kateremu nujno sledi sprememba stanja...

Na/K pump inactivation, subsarcolemmal Na measurements, and cytoplasmic ion turnover kinetics contradict restricted Na spaces in murine cardiac myocytes

OpenAIRE

Lu, Fang-Min; Hilgemann, Donald W.

2017-01-01

The Na/K pump exports cytoplasmic Na ions while importing K ions, and its activity is thought to be affected by restricted intracellular Na diffusion in cardiac myocytes. Lu and Hilgemann find instead that the pump can enter an inactivated state and that inactivation can be relieved by cytoplasmic Na.

Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Directory of Open Access Journals (Sweden)

Wei-Chun Chen

2012-01-01

Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

InN-based layers grown by modified HVPE

International Nuclear Information System (INIS)

Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark

2006-01-01

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. In x Ga 1-x N layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Vpliv toplotnih mostov na porabo energije za ogrevanje na primeru osnovne šole

OpenAIRE

Megušar, Primož

2015-01-01

Na primeru Osnovne šole Dobrova sem preveril, kakšen vpliv imajo dejanski toplotni mostovi na porabo energije za ogrevanje. Iz načrtov stavbe sem evidentiral vse toplotne mostove, kateri vplivajo na porabo energije. Tem toplotnim mostovom sem nato v standardu SIST EN ISO 14683 poiskal ustrezne približke. Nato sem s programom TOST izvedel tri simulacije. V prvem primeru toplotnih mostov nisem upošteval. V drugem primeru sem toplotne mostove upošteval na poenostavljen način, v zadnjem primeru p...

Na and K dependence of the Na/K pump in cystic fibrosis fibroblasts.

OpenAIRE

Reznik, V M; Schneider, J A; Mendoza, S A

1981-01-01

The Na and K dependence of the Na/K pump was measured in skin fibroblasts from patients with cystic fibrosis and age/sex-matched controls. Under basal conditions, there was no difference between control and cystic fibrosis cells in protein per cell, intracellular Na and K content, or Na/K pump activity (measured as ouabain-sensitive 86Rb uptake). There was no difference in the Na dependence of the Na/K pump between cystic fibrosis cells and control cells. In cells from patients with cystic fi...

Vliv mikroflóry na senzorické vlastnosti vína

OpenAIRE

Petrášová, Ludmila

2014-01-01

Tato bakalářská práce se zabývá vlivem mikroflóry na senzorické vlastnosti vína. Teoretická část informuje o botanickém popisu hroznů vína Veltlínské zelené, dále o jeho složení, o technologii zpracování bílého vína a o vlivu kvasinek na aromatický profil vína. V další části popisuje metodu stanovení aromaticky aktivních látek pomocí plynové chromatografie v kombinaci s mikroextrakcí tuhou fází (SPME-GC). Cílem experimentální části bylo proměřit vzorky 4 různých moštů odrůdy Veltlínské zelené...

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Directory of Open Access Journals (Sweden)

Saima Zaman

2013-10-01

Full Text Available Low-dimensional InN/InGaN quantum dots (QDs are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications.

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Science.gov (United States)

Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

2013-01-01

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

Dgroup: DG01781 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available grastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (genetical recombination) [Filgr...astim biosimilar 1] (JAN); Filgrastim (genetical recombination) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetica...USAN/INN); Lenograstim (genetical recombination) (JP17) ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetica...l recombination) (JAN) ... D10242 ... Lipegfilgrastim (USAN) D03245 ... Nartograstim (genetical recombination) (...l recombination) [Filgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (

Dgroup: DG01797 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ical recombination) (JP17); Insulin glargine (genetical recombination) injection (J...P17); Insulin glargine (genetical recombination [Insulin glargin biosimilar 1] (JAN); Insulin glargine (genetica...mir (USAN/INN); Insulin detemir (genetical recombination) (JAN) ... D09727 ... Insulin degludec (USAN/INN); Insulin degludec (genetica... DG01797 DGroup Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genet

Study of the Na-C-O and Na-H-O ternary systems in the sodium rich corner

International Nuclear Information System (INIS)

Maupre, J.-P.

1978-02-01

The purpose of this study is to provide a contribution to the understanding of the sodium - carbon - oxygen and sodium - hydrogen - oxygen ternary systems in the sodium rich corner. In order to do this the Na-NaH-Na 2 O-NaOH phase diagram was completed and the Na-Na 2 O-Na 2 CO 3 -C phase diagram was outlined. This work is made up of two parts. The first is devoted to a critical literature survey essential to establish correct phase diagrams. The second is an experimental study followed by a discussion collating our finding to the literary data. The basic experimental technique used is differential thermal analysis (DTA) but it has been completed by quenching, X-ray and chemical analysis methods. The proposed phase diagrams imply that Na-NaH-Na 2 O-NaOH and Na-Na 2 O-Na 2 CO 3 -C systems are reciprocal ternary systems. Temperatures of stable pairs reversal are respectively 410 and 690 0 C. The stable pairs are Na-NaOH and Na-Na 2 CO 3 at elevated temperature, Na 2 O-NaH and Na 2 O-C at low temperature [fr

Response of saliva Na/K ratio to changing Na supply of lactating cows under tropical conditions.

Science.gov (United States)

Thiangtum, Wandee; Schonewille, J Thomas; Verstegen, Martin Wa; Arsawakulsudhi, Supot; Rukkwamsuk, Theera; Hendriks, Wouter H

2017-06-01

Factorial determination of the sodium (Na) requirement of heat-stressed lactating cows is hindered by accurate estimates of the Na losses through sweat. Direct studies, therefore, may be needed requiring information on the time course of healthy animals to become Na depleted and the subsequent rate of repletion. The rate of Na depletion and subsequent rate of Na repletion with two levels of dietary Na to lactating dairy cows housed under tropical conditions were investigated using the salivary Na/K. The 12 lactating cows (salivary Na/K ratio 14.6) rapidly developed clinical signs of Na deficiency, including pica, polyuria and polydipsia, reduced body weight and reduced milk yield when fed a low-Na ration (0.33 g kg -1 dry matter (DM)) for 3 weeks. Deficiency symptoms were associated with a rapid decrease in salivary Na/K ratio to cows with NaCl to a ration concentration of 1.1 or 1.6 g Na kg -1 DM for 5 weeks did not restore salivary Na/K ratio to values of >6. A daily Na intake of heat-stressed lactating cows to a ration intake of 1.6 g Na kg -1 DM was insufficient to restore Na deficiency. One week was sufficient to deplete heat-stressed lactating cows of Na, allowing for rapid dose-response studies utilizing the salivary Na/K ratio as a parameter for Na status of cows under tropical conditions. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

Glutathionylation-Dependence of Na+-K+-Pump Currents Can Mimic Reduced Subsarcolemmal Na+ Diffusion

Science.gov (United States)

Garcia, Alvaro; Liu, Chia-Chi; Cornelius, Flemming; Clarke, Ronald J.; Rasmussen, Helge H.

2016-01-01

The existence of a subsarcolemmal space with restricted diffusion for Na+ in cardiac myocytes has been inferred from a transient peak electrogenic Na+-K+ pump current beyond steady state on reexposure of myocytes to K+ after a period of exposure to K+-free extracellular solution. The transient peak current is attributed to enhanced electrogenic pumping of Na+ that accumulated in the diffusion-restricted space during pump inhibition in K+-free extracellular solution. However, there are no known physical barriers that account for such restricted Na+ diffusion, and we examined if changes of activity of the Na+-K+ pump itself cause the transient peak current. Reexposure to K+ reproduced a transient current beyond steady state in voltage-clamped ventricular myocytes as reported by others. Persistence of it when the Na+ concentration in patch pipette solutions perfusing the intracellular compartment was high and elimination of it with K+-free pipette solution could not be reconciled with restricted subsarcolemmal Na+ diffusion. The pattern of the transient current early after pump activation was dependent on transmembrane Na+- and K+ concentration gradients suggesting the currents were related to the conformational poise imposed on the pump. We examined if the currents might be accounted for by changes in glutathionylation of the β1 Na+-K+ pump subunit, a reversible oxidative modification that inhibits the pump. Susceptibility of the β1 subunit to glutathionylation depends on the conformational poise of the Na+-K+ pump, and glutathionylation with the pump stabilized in conformations equivalent to those expected to be imposed on voltage-clamped myocytes supported this hypothesis. So did elimination of the transient K+-induced peak Na+-K+ pump current when we included glutaredoxin 1 in patch pipette solutions to reverse glutathionylation. We conclude that transient K+-induced peak Na+-K+ pump current reflects the effect of conformation-dependent β1 pump subunit

Glutathionylation-Dependence of Na(+)-K(+)-Pump Currents Can Mimic Reduced Subsarcolemmal Na(+) Diffusion.

Science.gov (United States)

Garcia, Alvaro; Liu, Chia-Chi; Cornelius, Flemming; Clarke, Ronald J; Rasmussen, Helge H

2016-03-08

The existence of a subsarcolemmal space with restricted diffusion for Na(+) in cardiac myocytes has been inferred from a transient peak electrogenic Na(+)-K(+) pump current beyond steady state on reexposure of myocytes to K(+) after a period of exposure to K(+)-free extracellular solution. The transient peak current is attributed to enhanced electrogenic pumping of Na(+) that accumulated in the diffusion-restricted space during pump inhibition in K(+)-free extracellular solution. However, there are no known physical barriers that account for such restricted Na(+) diffusion, and we examined if changes of activity of the Na(+)-K(+) pump itself cause the transient peak current. Reexposure to K(+) reproduced a transient current beyond steady state in voltage-clamped ventricular myocytes as reported by others. Persistence of it when the Na(+) concentration in patch pipette solutions perfusing the intracellular compartment was high and elimination of it with K(+)-free pipette solution could not be reconciled with restricted subsarcolemmal Na(+) diffusion. The pattern of the transient current early after pump activation was dependent on transmembrane Na(+)- and K(+) concentration gradients suggesting the currents were related to the conformational poise imposed on the pump. We examined if the currents might be accounted for by changes in glutathionylation of the β1 Na(+)-K(+) pump subunit, a reversible oxidative modification that inhibits the pump. Susceptibility of the β1 subunit to glutathionylation depends on the conformational poise of the Na(+)-K(+) pump, and glutathionylation with the pump stabilized in conformations equivalent to those expected to be imposed on voltage-clamped myocytes supported this hypothesis. So did elimination of the transient K(+)-induced peak Na(+)-K(+) pump current when we included glutaredoxin 1 in patch pipette solutions to reverse glutathionylation. We conclude that transient K(+)-induced peak Na(+)-K(+) pump current reflects the effect

Dgroup: DG01753 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ocyte colony stimulating factor (G-CSF) ... D03235 ... Filgrastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (gene...tical recombination) [Filgrastim biosimilar 1] (JAN); Filgrastim (genetical recombi...nation) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetical recombination) [Fi...lgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (USAN/INN); Lenograstim (genetical recombination) (JP17)... ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetical recombination) (JAN) ... D10242 ... Lipegfilgrastim

Crystal structure of a Na+-bound Na+,K+-ATPase preceding the E1P state.

Science.gov (United States)

Kanai, Ryuta; Ogawa, Haruo; Vilsen, Bente; Cornelius, Flemming; Toyoshima, Chikashi

2013-10-10

Na(+),K(+)-ATPase pumps three Na(+) ions out of cells in exchange for two K(+) taken up from the extracellular medium per ATP molecule hydrolysed, thereby establishing Na(+) and K(+) gradients across the membrane in all animal cells. These ion gradients are used in many fundamental processes, notably excitation of nerve cells. Here we describe 2.8 Å-resolution crystal structures of this ATPase from pig kidney with bound Na(+), ADP and aluminium fluoride, a stable phosphate analogue, with and without oligomycin that promotes Na(+) occlusion. These crystal structures represent a transition state preceding the phosphorylated intermediate (E1P) in which three Na(+) ions are occluded. Details of the Na(+)-binding sites show how this ATPase functions as a Na(+)-specific pump, rejecting K(+) and Ca(2+), even though its affinity for Na(+) is low (millimolar dissociation constant). A mechanism for sequential, cooperative Na(+) binding can now be formulated in atomic detail.

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

Energy Technology Data Exchange (ETDEWEB)

Abdulmalik, Osheiza [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena [Virginia Commonwealth University, Richmond, VA 23298 (United States); Chen, Qiukan; Yang, Jisheng [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Nnamani, Ijeoma [Duke University Medical Center, Durham, NC 27710 (United States); Danso-Danquah, Richmond [Virginia Commonwealth University, Richmond, VA 23298 (United States); Eseonu, Dorothy N. [Virginia Union University, Richmond, VA 23220 (United States); Asakura, Toshio [Duke University Medical Center, Durham, NC 27710 (United States); Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K., E-mail: msafo@vcu.edu [Virginia Commonwealth University, Richmond, VA 23298 (United States); The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States)

2011-11-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

International Nuclear Information System (INIS)

Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

2011-01-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization

Attitudes of physicians and pharmacists towards International Non-proprietary Name prescribing in Belgium.

Science.gov (United States)

Van Bever, Elien; Elseviers, Monique; Plovie, Marijke; Vandeputte, Lieselot; Van Bortel, Luc; Vander Stichele, Robert

2015-03-01

International Non-proprietary Name (INN) prescribing is the use of the name of the active ingredient(s) instead of the brand name for prescribing. In Belgium, INN prescribing began in 2005 and a major policy change occurred in 2012. The aim was to explore the opinions of Dutch-speaking general practitioners (GPs) and pharmacists. An electronic questionnaire with 39 five-point Likert scale statements and one open question was administered in 2013. Multivariate analysis was performed with multiple linear regression on a sum score for benefit statements and for drawback statements. Answers to the open question were qualitatively analysed. We received 745 valid responses with a representable sample for both subgroups. Participants perceived the motives to introduce INN prescribing as purely economic (to reduce pharmaceutical expenditures for the government and the patient). Participants accepted the concept of INN prescribing, but 88% stressed the importance of guaranteed treatment continuity, especially in older, chronic patients, to prevent patient confusion, medication non-adherence and erroneous drug use. In conclusion, the current way in which INN prescribing is applied in Belgium leads to many concerns among primary health professionals about patient confusion and medication adherence. Slightly adapting the current concept of INN prescribing to these concerns can turn INN prescribing into one of the major policies in Belgium to reduce pharmaceutical expenditures and to stimulate rational drug prescribing. © 2014 Nordic Association for the Publication of BCPT (former Nordic Pharmacological Society).

Na+-H+ exchange and Na+-dependent transport systems in streptozotocin diabetic rat kidneys

International Nuclear Information System (INIS)

El-Seifi, S.; Freiberg, J.M.; Kinsella, F.J.; Cheng, L.; Sacktor, B.

1987-01-01

The streptozotocin-induced diabetic rat was used to test the hypothesis that Na + -H + exchange activity in the proximal tubule luminal membrane would be increased in association with renal hypertrophy, altered glomerular hemodynamics, enhanced filtered load and tubular reabsorption of 22 Na + , and stimulated 22 Na= pump activity in the basolateral membrane, previously reported characteristics of this experimental animal model. Amiloride-sensitive H + gradient-dependent Na + uptake and Na + gradient-dependent H + flux were increased in brush-border membrane vesicles from the streptozotocin-treated animals. Na + gradient-dependent uptakes of phosphate, D-glucose, L-proline, and myoinositol were decreased in the drug-induced diabetic animals. These membrane transport alterations were not found when the streptozotocin-diabetic animals were treated with insulin

The two C-terminal tyrosines stabilize occluded Na/K pump conformations containing Na or K ions.

Science.gov (United States)

Vedovato, Natascia; Gadsby, David C

2010-07-01

Interactions of the three transported Na ions with the Na/K pump remain incompletely understood. Na/K pump crystal structures show that the extended C terminus of the Na,K-adenosine triphosphatase (ATPase) alpha subunit directly contacts transmembrane helices. Deletion of the last five residues (KETYY in almost all Na/K pumps) markedly lowered the apparent affinity for Na activation of pump phosphorylation from ATP, a reflection of cytoplasmic Na affinity for forming the occluded E1P(Na3) conformation. ATPase assays further suggested that C-terminal truncations also interfere with low affinity Na interactions, which are attributable to extracellular effects. Because extracellular Na ions traverse part of the membrane's electric field to reach their binding sites in the Na/K pump, their movements generate currents that can be monitored with high resolution. We report here electrical measurements to examine how Na/K pump interactions with extracellular Na ions are influenced by C-terminal truncations. We deleted the last two (YY) or five (KESYY) residues in Xenopus laevis alpha1 Na/K pumps made ouabain resistant by either of two kinds of point mutations and measured their currents as 10-mM ouabain-sensitive currents in Xenopus oocytes after silencing endogenous Xenopus Na/K pumps with 1 microM ouabain. We found the low affinity inhibitory influence of extracellular Na on outward Na/K pump current at negative voltages to be impaired in all of the C-terminally truncated pumps. Correspondingly, voltage jump-induced transient charge movements that reflect pump interactions with extracellular Na ions were strongly shifted to more negative potentials; this signals a several-fold reduction of the apparent affinity for extracellular Na in the truncated pumps. Parallel lowering of Na affinity on both sides of the membrane argues that the C-terminal contacts provide important stabilization of the occluded E1P(Na3) conformation, regardless of the route of Na ion entry into the

Anion-coupled Na efflux mediated by the human red blood cell Na/K pump

International Nuclear Information System (INIS)

Dissing, S.; Hoffman, J.F.

1990-01-01

The red cell Na/K pump is known to continue to extrude Na when both Na and K are removed from the external medium. Because this ouabain-sensitive flux occurs in the absence of an exchangeable cation, it is referred to as uncoupled Na efflux. This flux is also known to be inhibited by 5 mM Nao but to a lesser extent than that inhibitable by ouabain. Uncoupled Na efflux via the Na/K pump therefore can be divided into a Nao-sensitive and Nao-insensitive component. We used DIDS-treated, SO4-equilibrated human red blood cells suspended in HEPES-buffered (pHo 7.4) MgSO4 or (Tris)2SO4, in which we measured 22Na efflux, 35SO4 efflux, and changes in the membrane potential with the fluorescent dye, diS-C3 (5). A principal finding is that uncoupled Na efflux occurs electroneurally, in contrast to the pump's normal electrogenic operation when exchanging Nai for Ko. This electroneutral uncoupled efflux of Na was found to be balanced by an efflux of cellular anions. (We were unable to detect any ouabain-sensitive uptake of protons, measured in an unbuffered medium at pH 7.4 with a Radiometer pH-STAT.) The Nao-sensitive efflux of Nai was found to be 1.95 +/- 0.10 times the Nao-sensitive efflux of (SO4)i, indicating that the stoichiometry of this cotransport is two Na+ per SO4=, accounting for 60-80% of the electroneutral Na efflux. The remainder portion, that is, the ouabain-sensitive Nao-insensitive component, has been identified as PO4-coupled Na transport and is the subject of a separate paper. That uncoupled Na efflux occurs as a cotransport with anions is supported by the result, obtained with resealed ghosts, that when internal and external SO4 was substituted by the impermeant anion, tartrate i,o, the efflux of Na was inhibited 60-80%. This inhibition could be relieved by the inclusion, before DIDS treatment, of 5 mM Cli,o

Na5NbO5 and Na5TaO5 phases

International Nuclear Information System (INIS)

Darriet, J.; Maazaz, A.; Bouloux, J.C.; Delmas, C.

1982-01-01

New ternary oxides of formulas Na 5 NbO 5 and Na 5 TaO 5 have been prepared. They crystallize in the monoclinic system (space group C2/c). The crystal structure of Na 5 NbO 5 has been determined. It derives from a NaCl-type structure by ordering of the cations and of the oxygen vacancies in the anionic sublattice, the corresponding formula being Nasub(5/6)Nbsub(1/6)Osub(5/6)vacant sub(1/6). Sodium and niobium have a distorted square-pyramidal surrounding. (author)

MEG source localization using invariance of noise space.

Directory of Open Access Journals (Sweden)

Junpeng Zhang

Full Text Available We propose INvariance of Noise (INN space as a novel method for source localization of magnetoencephalography (MEG data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

Synthesis of Na-A and/or Na-X zeolite/porous carbon composites from carbonized rice husk

International Nuclear Information System (INIS)

Katsuki, Hiroaki; Komarneni, Sridhar

2009-01-01

Na-A and/or Na-X zeolite/porous carbon composites were prepared under hydrothermal conditions by NaOH dissolution of silica first from carbonized rice husk followed by addition of NaAlO 2 and in situ crystallization of zeolites i.e., using a two-step process. When a one-step process was used, both Na-A and Na-X zeolites crystallized on the surface of carbon. Na-A or Na-X zeolite crystals were prepared on the porous carbonized rice husk at 90 deg. C for 2-6 h by changing the SiO 2 /Al 2 O 3 , H 2 O/Na 2 O and Na 2 O/SiO 2 molar ratios of precursors in the two-step process. The surface area and NH 4 + -cation exchange capacity (CEC) of Na-A zeolite/porous carbon were found to be 171 m 2 /g and 506 meq/100 g, respectively, while those of Na-X zeolite/porous carbon composites were 676 m 2 /g and 317 meq/100 g, respectively. Na-A and Na-X zeolites are well-known microporous and hydrophilic materials while carbonized rice husk was found to be mesoporous (pores of ∼3.9 nm) and hydrophobic. These hybrid microporous-mesoporous and hydrophilic-hydrophobic composites are expected to be useful for decontamination of metal cations as well as organic contaminants simultaneously. - Graphical Abstract: Novel Na-X zeolite/porous carbon composite.

Equilibrium chemical transformations in NaPO3 + NaCl melts

International Nuclear Information System (INIS)

Kovarskaya, E.N.; Rodionov, Yu.I.

1988-01-01

Because of the problems of the burial of solidified radioactive wastes into different geological rock formations, in particular into massives of rock-salt, the state of molten polyphosphate-chloride mixtures (taking into account the chemical character of the interaction of their components) for a prolonged period of time. The equilibrium products of the reaction in the NaPO 3 -NaCl system were studied in melts in air in the composition range of 30-70 mole % NaCl. It was shown that with increase in the NaCl content in the mixtures, the polyphosphate gradually depolymerizes to sodium tri-, di-, and monophosphates, and the composition of the equilibrium melts is dependent only on the ratio between the components in the initial molten mixtures. The time until the equilibrium is attained is shorter, the higher is the experimental temperature

Long-Range Effects of Na(+) Binding in Na,K-ATPase Reported by ATP.

Science.gov (United States)

Middleton, David A; Fedosova, Natalya U; Esmann, Mikael

2015-12-01

This paper addresses the question of long-range interactions between the intramembranous cation binding sites and the cytoplasmic nucleotide binding site of the ubiquitous ion-transporting Na,K-ATPase using (13)C cross-polarization magic-angle spinning (CP-MAS) solid-state nuclear magnetic resonance. High-affinity ATP binding is induced by the presence of Na(+) as well as of Na-like substances such as Tris(+), and these ions are equally efficient promoters of nucleotide binding. CP-MAS analysis of bound ATP with Na,K-ATPase purified from pig kidney membranes reveals subtle differences in the nucleotide interactions within the nucleotide site depending on whether Na(+) or Tris(+) is used to induce binding. Differences in chemical shifts for ATP atoms C1' and C5' observed in the presence of Na(+) or Tris(+) suggest alterations in the residues surrounding the bound nucleotide, hydrogen bonding, and/or conformation of the ribose ring. This is taken as evidence of a long-distance communication between the Na(+)-filled ion sites in the membrane interior and the nucleotide binding site in the cytoplasmic domain and reflects the first conformational change ultimately leading to phosphorylation of the enzyme. Stopped-flow fluorescence measurements with the nucleotide analogue eosin show that the dissociation rate constant for eosin is larger in Tris(+) than in Na(+), giving kinetic evidence of the difference in structural effects of Na(+) and Tris(+). According to the recent crystal structure of the E1·AlF4(-)·ADP·3Na(+) form, the coupling between the ion binding sites and the nucleotide side is mediated by, among others, the M5 helix.

Interaction between Na+/K+-pump and Na+/Ca2+-exchanger modulates intercellular communication.

Science.gov (United States)

Matchkov, Vladimir V; Gustafsson, Helena; Rahman, Awahan; Briggs Boedtkjer, Donna M; Gorintin, Sarah; Hansen, Anne Kirstine; Bouzinova, Elena V; Praetorius, Helle A; Aalkjaer, Christian; Nilsson, Holger

2007-04-13

Ouabain, a specific inhibitor of the Na(+)/K(+)-pump, has previously been shown to interfere with intercellular communication. Here we test the hypothesis that the communication between vascular smooth muscle cells is regulated through an interaction between the Na(+)/K(+)-pump and the Na(+)/Ca(2+)-exchanger leading to an increase in the intracellular calcium concentration ([Ca(2+)](i)) in discrete areas near the plasma membrane. [Ca(2+)](i) in smooth muscle cells was imaged in cultured rat aortic smooth muscle cell pairs (A7r5) and in rat mesenteric small artery segments simultaneously with force. In A7r5 coupling between cells was estimated by measuring membrane capacitance. Smooth muscle cells were uncoupled when the Na(+)/K(+)-pump was inhibited either by a low concentration of ouabain, which also caused a localized increase of [Ca(2+)](i) near the membrane, or by ATP depletion. Reduction of Na(+)/K(+)-pump activity by removal of extracellular potassium ([K(+)](o)) also uncoupled cells, but only after inhibition of K(ATP) channels. Inhibition of the Na(+)/Ca(2+)-exchange activity by SEA0400 or by a reduction of the equilibrium potential (making it more negative) also uncoupled the cells. Depletion of intracellular Na(+) and clamping of [Ca(2+)](i) at low concentrations prevented the uncoupling. The experiments suggest that the Na(+)/K(+)-pump may affect gap junction conductivity via localized changes in [Ca(2+)](i) through modulation of Na(+)/Ca(2+)-exchanger activity.

Dgroup: DG01358 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01358 Chemical ... DGroup Trastuzumab ... D03257 ... Trastuzumab (INN); Trastuzumab (genetica...l recombination) (JAN) ... D09980 ... Trastuzumab emtansine (USAN/INN); Trastuzumab emtansine (genetical re

Dgroup: DG01456 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomidine... (INN) ... D03702 ... Detomidine hydrochloride (USAN) ... DG0132

Intracellular Na(+) and metabolic modulation of Na/K pump and excitability in the rat suprachiasmatic nucleus neurons.

Science.gov (United States)

Wang, Yi-Chi; Yang, Jyh-Jeen; Huang, Rong-Chi

2012-10-01

Na/K pump activity and metabolic rate are both higher during the day in the suprachiasmatic nucleus (SCN) that houses the circadian clock. Here we investigated the role of intracellular Na(+) and energy metabolism in regulating Na/K pump activity and neuronal excitability. Removal of extracellular K(+) to block the Na/K pump excited SCN neurons to fire at higher rates and return to normal K(+) to reactivate the pump produced rebound hyperpolarization to inhibit firing. In the presence of tetrodotoxin to block the action potentials, both zero K(+)-induced depolarization and rebound hyperpolarization were blocked by the cardiac glycoside strophanthidin. Ratiometric Na(+) imaging with a Na(+)-sensitive fluorescent dye indicated saturating accumulation of intracellular Na(+) in response to pump blockade with zero K(+). The Na(+) ionophore monensin also induced Na(+) loading and hyperpolarized the membrane potential, with the hyperpolarizing effect of monensin abolished in zero Na(+) or by pump blockade. Conversely, Na(+) depletion with Na(+)-free pipette solution depolarized membrane potential but retained residual Na/K pump activity. Cyanide inhibition of oxidative phosphorylation blocked the Na/K pump to depolarize resting potential and increase spontaneous firing in most cells, and to raise intracellular Na(+) levels in all cells. Nonetheless, the Na/K pump was incompletely blocked by cyanide but completely blocked by iodoacetate to inhibit glycolysis, indicating the involvement of both oxidative phosphorylation and glycolysis in fueling the Na/K pump. Together, the results indicate the importance of intracellular Na(+) and energy metabolism in regulating Na/K pump activity as well as neuronal excitability in the SCN neurons.

Synthesis of zeolites Na-A and Na-X from tablet compressed and calcinated coal fly ash

Science.gov (United States)

Hu, Tao; Gao, Wenyan; Liu, Xin; Zhang, Yifu; Meng, Changgong

2017-10-01

Zeolites Na-A and Na-X are important synthetic zeolites widely used for separation and adsorption in industry. It is of great significance to develop energy-efficient routines that can synthesize zeolites Na-A and Na-X from low-cost raw materials. Coal fly ash (CFA) is the major residue from the combustion of coal and biomass containing more than 85% SiO2 and Al2O3, which can readily replace the conventionally used sodium silicate and aluminate for zeolite synthesis. We used Na2CO3 to replace the expensive NaOH used for the calcination of CFA and showed that tablet compression can enhance the contact with Na2CO3 for the activation of CFA through calcination for the synthesis of zeolites Na-A and Na-X under mild conditions. We optimized the control variables for zeolite synthesis and showed that phase-pure zeolite Na-A can be synthesized with CFA at reactant molar ratio, hydrothermal reaction temperature and reaction time of 1.3Na2O: 0.6Al2O3: 1SiO2: 38H2O at 80°C for 6 h, respectively, while phase-pure zeolite Na-X can be synthesized at 2.2Na2O: 0.2Al2O3: 1SiO2: 88H2O at 100°C for 8 h, respectively. The composition, morphology, specific surface area, vibration spectrum and thermogravimetry of synthesized Na-A and Na-X were further characterized.

The CERES / NA45 experiment

CERN Multimedia

Laurent Guiraud

2000-01-01

Ceres is one of the second generation heavy ion experiments at CERN's SPS. It is dedicated to the study of electron-positron pairs in relativistic nuclear collisions. NA45 is one of the seven experiments (NA44, NA45, NA49, NA50, NA52, WA97/NA57 and WA98) involved in CERN's Heavy Ion programme which provided evidence for the existence of a new state of matter, the quark-gluon plasma. In this state, quarks, instead of being bound up into more complex particles such as protons and neutrons, are liberated and roam freely. Theory predicts that this state must have existed at about 10 microseconds after the Big Bang, before the formation of matter as we know it today.

Dgroup: DG01613 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01613 DGroup Xantine-type antiparkinsonian agent -fylline ... D02964 ... Apaxifylline ...(USAN/INN) D04641 ... Istradefylline (JAN/USAN/INN) ... Neuropsychiatric agent ... DG01967 ... Antiparkinson agent ...

Dgroup: DG01789 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ) DG01442 ... Tedizolid ... D09685 ... Tedizolid (USAN/INN) ... D09686 ... Tedizolid phosphate (JAN/USAN) ... D10167 ... Sutezolid (USAN/INN) Antibacterial ... Antibiotics 50S ribosomal subunit ...

Dgroup: DG01644 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available xetine ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine...0967 ... Dexamfetamine ... D03740 ... Dextroamphetamine (USAN); Dexamfetamine (INN) ... D02078 ... Dextroamphetamine sulfate (USP) ... DG00970 ... Atomo

Dgroup: DG01584 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01584 DGroup Estrogen receptor agonist -estr- ... DG00461 ... Ethinylestradiol ... D00554... ... Ethinyl estradiol (USP); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estrad...iol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) ... D04061 ... Estradiol a...cetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradio

The rapid-onset dystonia parkinsonism mutation D923N of the Na+, K+-ATPase alpha3 isoform disrupts Na+ interaction at the third Na+ site.

Science.gov (United States)

Einholm, Anja Pernille; Toustrup-Jensen, Mads S; Holm, Rikke; Andersen, Jens Peter; Vilsen, Bente

2010-08-20

Rapid-onset dystonia parkinsonism (RDP), a rare neurological disorder, is caused by mutation of the neuron-specific alpha3-isoform of Na(+), K(+)-ATPase. Here, we present the functional consequences of RDP mutation D923N. Relative to the wild type, the mutant exhibits a remarkable approximately 200-fold reduction of Na(+) affinity for activation of phosphorylation from ATP, reflecting a defective interaction of the E(1) form with intracellular Na(+). This is the largest effect on Na(+) affinity reported so far for any Na(+), K(+)-ATPase mutant. D923N also affects the interaction with extracellular Na(+) normally driving the E(1)P to E(2)P conformational transition backward. However, no impairment of K(+) binding was observed for D923N, leading to the conclusion that Asp(923) is specifically associated with the third Na(+) site that is selective toward Na(+). The crystal structure of the Na(+), K(+)-ATPase in E(2) form shows that Asp(923) is located in the cytoplasmic half of transmembrane helix M8 inside a putative transport channel, which is lined by residues from the transmembrane helices M5, M7, M8, and M10 and capped by the C terminus, recently found involved in recognition of the third Na(+) ion. Structural modeling of the E(1) form of Na(+), K(+)-ATPase based on the Ca(2+)-ATPase crystal structure is consistent with the hypothesis that Asp(923) contributes to a site binding the third Na(+) ion. These results in conjunction with our previous findings with other RDP mutants suggest that a selective defect in the handling of Na(+) may be a general feature of the RDP disorder.

Changes to International Nonproprietary Names for antibody therapeutics 2017 and beyond: of mice, men and more.

Science.gov (United States)

Parren, Paul W H I; Carter, Paul J; Plückthun, Andreas

Active pharmaceutical substances require an International Nonproprietary Name (INN) assigned by the World Health Organization (WHO) to obtain market authorization as a medicinal product. INNs are selected to represent a unique, generic name for a drug enabling unambiguous identification by stakeholders worldwide. INNs may be requested after initiating clinical development of an investigational drug. Pharmaceutical classes are indicated by a common stem or suffix. Currently, INNs for monoclonal antibody-based drugs are recognized by the suffix, -mab, preceded by a source infix such as -xi- (chimeric), -zu- (humanized) or -u- (human) designating the species from which the antibody was derived. However, many technological advances have made it increasingly difficult to accurately capture an antibody's source in its name. In 2014, the WHO and the United States Adopted Names (USAN) Council approached this challenge by implementing changes to antibody source infix definitions. Unfortunately, gaps and ambiguities in the definitions and procedures resulted in inconsistent source category assignments and widespread confusion. The Antibody Society, extensively supported by academic and industry scientists, voiced concerns leading to constructive dialog during scheduled consultations with WHO and USAN Council representatives. In June 2017, the WHO announced that use of the source infix will be discontinued for new antibody INNs effective immediately. We fully support this change as it better aligns antibody INNs with current and foreseeable future innovations in antibody therapeutics. Here we review the changes implemented. Additionally, we analyzed antibody INNs recently assigned under the previous 2014 definitions and provide recommendations for further alignment.

Recikliranje plastenk na kreativen način

OpenAIRE

Pavlin, Suzana

2017-01-01

Plastenke, poleg ostalih plastičnih izdelkov, v zadnjih letih predstavljajo pravo katastrofo za okolje. Domnevamo, da se le redko kdo vpraša, kaj se zgodi z njo po tem, ko je iz nje zaužil še zadnjo kapljico vode. Plastenka je lahko kot večina ostalih komunalnih odpadkov ponovno uporabljena, reciklirana, sežgana ali odložena na deponijo. V primeru nespoštovanja Zakona o varstvu okolja pa pristane v naravi, pogosto v morju, kjer prav počasi razpada in negativno vpliva na celoten ekosistem. V d...

Dgroup: DG01704 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05454 ... Phenmetrazine hydrochloride (USP) D07114 ... Etilamfetamine (INN) D07115 ... Clobenzorex (INN) Other ... DG01706 ... Antiobesity ... DG01705 ... Anoretic ATC code: A08AA Anoretics ...

Dgroup: DG01970 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ylphenidate (USAN/INN) ... D01296 ... Methylphenidate hydrochloride (JAN/USP) ... DG00970 ... Atomoxetine... ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine hydrochloride (JAN/USP) ... DG00972 ... De

Plant Defensins NaD1 and NaD2 Induce Different Stress Response Pathways in Fungi

Directory of Open Access Journals (Sweden)

Peter M. Dracatos

2016-09-01

Full Text Available Nicotiana alata defensins 1 and 2 (NaD1 and NaD2 are plant defensins from the ornamental tobacco that have antifungal activity against a variety of fungal pathogens. Some plant defensins interact with fungal cell wall O-glycosylated proteins. Therefore, we investigated if this was the case for NaD1 and NaD2, by assessing the sensitivity of the three Aspergillus nidulans (An O-mannosyltransferase (pmt knockout (KO mutants (An∆pmtA, An∆pmtB, and An∆pmtC. An∆pmtA was resistant to both defensins, while An∆pmtC was resistant to NaD2 only, suggesting NaD1 and NaD2 are unlikely to have a general interaction with O-linked side chains. Further evidence of this difference in the antifungal mechanism was provided by the dissimilarity of the NaD1 and NaD2 sensitivities of the Fusarium oxysporum f. sp. lycopersici (Fol signalling knockout mutants from the cell wall integrity (CWI and high osmolarity glycerol (HOG mitogen-activated protein kinase (MAPK pathways. HOG pathway mutants were sensitive to both NaD1 and NaD2, while CWI pathway mutants only displayed sensitivity to NaD2.

Glutamate Water Gates in the Ion Binding Pocket of Na(+) Bound Na(+), K(+)-ATPase

DEFF Research Database (Denmark)

Han, Minwoo; Kopec, Wojciech; Solov'yov, Ilia A

2017-01-01

III is always protonated. Glutamic acid residues in the three binding sites act as water gates, and their deprotonation triggers water entry to the binding sites. From DFT calculations of Na(+) binding energies, we conclude that three protons in the binding site are needed to effectively bind Na......The dynamically changing protonation states of the six acidic amino acid residues in the ion binding pocket of the Na(+), K(+) -ATPase (NKA) during the ion transport cycle are proposed to drive ion binding, release and possibly determine Na(+) or K(+) selectivity. We use molecular dynamics (MD......(+) from water and four are needed to release them in the next step. Protonation of Asp926 in site III will induce Na(+) release, and Glu327, Glu954 and Glu779 are all likely to be protonated in the Na(+) bound occluded conformation. Our data provides key insights into the role of protons in the Na...

Dgroup: DG01967 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available de (INN) ... D00502 ... Pergolide mesylate (USP); Pergolide mesilate (JAN) ... D07836 ... Dihydroergocryptine mesilate DG00862 ... Ropini...role ... D08489 ... Ropinirole (USAN/INN) ... D00784 ... Ropinirole hydrochlo

NA62 and NA48/2 results on search for Heavy Neutral Leptons

Directory of Open Access Journals (Sweden)

Lamanna Gianluca

2018-01-01

Full Text Available In this paper we present new results on upper limits for the search of Heavy Neutral Leptons (HNL with data collected by NA48/2 (2003-2004, NA62-RK (2007 and NA62 (2015 CERN experiments. The data collected with different trigger configuration allow to search for both long and short living heavy neutrinos in the mass range below the kaon mass. In addition the status of the search for K+ → π+vv with the NA62 detector will be briefly presented.

Development of Advanced Ill-Nitride Materials

Science.gov (United States)

2008-09-24

tant to note that growth conditions have little effect on In- vacancy concentration as determined by positron annihilation spectroscopy .27 The In... applications in de- vices. These limitations are in part caused by an electron accumulation layer at the InN surface due to surface Fermi level pinning in the...conduction band,1 restricting the fabrica- tion of p-type InN layers.2 To facilitate pure p-type InN and drive research toward device applications

Transmural gradients in Na/K pump activity and [Na+]I in canine ventricle.

Science.gov (United States)

Gao, J; Wang, W; Cohen, I S; Mathias, R T

2005-09-01

There are well-documented differences in ion channel activity and action potential shape between epicardial (EPI), midmyocardial (MID), and endocardial (ENDO) ventricular myocytes. The purpose of this study was to determine if differences exist in Na/K pump activity. The whole cell patch-clamp was used to measure Na/K pump current (I(P)) and inward background Na(+)-current (I(inb)) in cells isolated from canine left ventricle. All currents were normalized to membrane capacitance. I(P) was measured as the current blocked by a saturating concentration of dihydro-ouabain. [Na(+)](i) was measured using SBFI-AM. I(P)(ENDO) (0.34 +/- 0.04 pA/pF, n = 17) was smaller than I(P)(EPI) (0.68 +/- 0.09 pA/pF, n = 38); the ratio was 0.50 with I(P)(MID) being intermediate (0.53 +/- 0.13 pA/pF, n = 19). The dependence of I(P) on [Na(+)](i) or voltage was essentially identical in EPI and ENDO (half-maximal activation at 9-10 mM [Na(+)](i) or approximately -90 mV). Increasing [K(+)](o) from 5.4 to 15 mM caused both I(P)(ENDO) and I(P)(EPI) to increase, but the ratio remained approximately 0.5. I(inb) in EPI and ENDO were nearly identical ( approximately 0.6 pA/pF). Physiological [Na(+)](i) was lower in EPI (7 +/- 2 mM, n = 31) than ENDO (12 +/- 3 mM, n = 29), with MID being intermediate (9 +/- 3 mM, n = 22). When cells were paced at 2 Hz, [Na(+)](i) increased but the differences persisted (ENDO 14 +/- 3 mM, n = 10; EPI 9 +/- 2 mM, n = 10; and MID intermediate, 11 +/- 2 mM, n = 9). Based on these results, the larger I(P) in EPI appears to reflect a higher maximum turnover rate, which implies either a larger number of active pumps or a higher turnover rate per pump protein. The transmural gradient in [Na(+)](i) means physiological I(P) is approximately uniform across the ventricular wall, whereas transporters that utilize the transmembrane electrochemical gradient for Na(+), such as Na/Ca exchange, have a larger driving force in EPI than ENDO.

Dgroup: DG01639 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available amine ... D07984 ... Fluvoxamine (INN) ... D00824 ... Fluvoxamine maleate (JP17/USAN) ... DG00947 ... Escitalopram ... D07913 ... Escitalopram... (INN) ... D02567 ... Escitalopram oxalate (JAN/USAN) ... DG00951 ... Mianserin

Dgroup: DG01975 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 91 ... Enprostil (JAN/USAN/INN) D01451 ... Scopolamine butylbromide (JP17) ... DG02008 ... Gastric mucosal protectant ... DG00025 ... Sucralfate... ... C07314 ... Sucralfate ... D00446 ... Sucralfate (USP/INN); Sucralfate

Dgroup: DG01703 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN) DG01610 ... Xanthine-type cardiotonics ... D07151 ... Cafedrine (BAN) ... D07155 ... Theodrenaline (INN) ... D07933 ... Etofy... ... Ciclafrine hydrochloride (USAN) ... D07150 ... Gepefrine (INN) ... D07151 ... Cafedrine (BA

Reactions of metal oxides with molten NaPO3 + NaCl mixtures

International Nuclear Information System (INIS)

Kovarskaya, E.N.; Mityakhina, V.S.; Rodionov, Yu.I.; Silin, M.Yu.

1988-01-01

We consider the dissolution mechanism for iron (III), europium(III), and tin(IV) oxides in molten NaPO 3 + NaCl that are responsible for the peak solubilities. We chose Fe 2 O 3 as the basic material since this occurs in large amounts around damaged metal structures in rock salt mines in a proposed zone for storing vitrified radioactive wastes. Solubility measurement and paper chromatography show that Fe 2 O 3 dissolves in molten NaPO 3 + NaCl in air by reaction with the solvent to give double iron and sodium diphosphates and monophosphates in accordance with the initial solution-in-the-melt composition, the degree of equilibration, and the temperature. The elevated solubilities for initial NaCl contents close to 30 mole % are due to sodium triphosphates and tricyclophosphates present in these melts. Moessbauer spectroscopy confirms that double iron, europium and tin diphosphates and monophosphates containing sodium occur in these chloride-polyphosphate melts

Na(+),K (+)-ATPase as a docking station: protein-protein complexes of the Na(+),K (+)-ATPase.

Science.gov (United States)

Reinhard, Linda; Tidow, Henning; Clausen, Michael J; Nissen, Poul

2013-01-01

The Na(+),K(+)-ATPase, or sodium pump, is well known for its role in ion transport across the plasma membrane of animal cells. It carries out the transport of Na(+) ions out of the cell and of K(+) ions into the cell and thus maintains electrolyte and fluid balance. In addition to the fundamental ion-pumping function of the Na(+),K(+)-ATPase, recent work has suggested additional roles for Na(+),K(+)-ATPase in signal transduction and biomembrane structure. Several signaling pathways have been found to involve Na(+),K(+)-ATPase, which serves as a docking station for a fast-growing number of protein interaction partners. In this review, we focus on Na(+),K(+)-ATPase as a signal transducer, but also briefly discuss other Na(+),K(+)-ATPase protein-protein interactions, providing a comprehensive overview of the diverse signaling functions ascribed to this well-known enzyme.

Characterization of Na+-linked and Na+-independent Cl-/HCO3- exchange systems in Chinese hamster lung fibroblasts

International Nuclear Information System (INIS)

Cassel, D.; Scharf, O.; Rotman, M.; Cragoe, E.J. Jr.; Katz, M.

1988-01-01

The PS120 variant of Chinese hamster lung fibroblasts which lacks Na + /H + exchange activity was used to investigate bicarbonate transport systems and their role in intracellular pH (pH/sub i/) regulation. When pH/sub i/ was decreased by acid load, bicarbonate caused pH/sub i/ increase and stimulated 36 Cl - efflux from the cells, both in a Na + -dependent manner. These results together with previous findings that bicarbonate stimulates 22 Na + uptake in PS120 cells demonstrate the presence of a Na + -linked Cl - /HCO 3 - exchange system. In cells with normal initial pH/sub i/, bicarbonate caused Na + -independent pH/sub i/ increase in Cl - -free solutions and stimulated Na + -independent 36 Cl - efflux, indicating that a Na + -independent Cl - /HCO 3 - exchanger is also present in the cell. Na + -linked and Na + -independent Cl - /HCO 3- exchange is apparently mediated by two distinct systems, since a [(tetrahydrofluorene-7-yl)oxy]acetic acid derivative selectively inhibits the Na + -independent exchanger. An additional distinctive features is a 10-fold lower affinity for chloride of the Na + -linked exchanger. The Na + -linked and Na + -independent Cl - /HCO 3 - exchange systems are likely to protect the cell from acid and alkaline load, respectively

Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

2007-01-01

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

Dgroup: DG01675 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available aine ... D01152 ... Oxethazaine (JP17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride ... DG00801 ... Bupivacaine ... D07552 ... Bupiva...caine (USAN/INN) ... D01450 ... Bupivacaine hydrochloride (USP); Bupivacaine hydrochl

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2011-01-01

Holiday Inn Central Plaza Beijing Tyrone Tang is the newly appointed general manager of Holiday Inn Central Plaza, Beijing.Tang joined IHGin2002.He was transferred from the position of operations manager.

Dgroup: DG01720 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17); Cyclophosphamide tablets (JP17) ... DG01514 ... Palifosfamide ... D09364 ... Palifosfamide (USAN/INN) ... D10373 ... P...yclophosphamide ... D07760 ... Cyclophosphamide (INN) ... D00287 ... Cyclophosphamide (USP); Cyclophosphamide hydrate (J

Na/K Pump and Beyond: Na/K-ATPase as a Modulator of Apoptosis and Autophagy

Directory of Open Access Journals (Sweden)

Cassiano Felippe Gonçalves-de-Albuquerque

2017-04-01

Full Text Available Lung cancer is a leading cause of global cancer deaths. Na/K-ATPase has been studied as a target for cancer treatment. Cardiotonic steroids (CS trigger intracellular signalling upon binding to Na/K-ATPase. Normal lung and tumour cells frequently express different pump isoforms. Thus, Na/K-ATPase is a powerful target for lung cancer treatment. Drugs targeting Na/K-ATPase may induce apoptosis and autophagy in transformed cells. We argue that Na/K-ATPase has a role as a potential target in chemotherapy in lung cancer treatment. We discuss the effects of Na/K-ATPase ligands and molecular pathways inducing deleterious effects on lung cancer cells, especially those leading to apoptosis and autophagy.

Na/K Pump and Beyond: Na/K-ATPase as a Modulator of Apoptosis and Autophagy.

Science.gov (United States)

Felippe Gonçalves-de-Albuquerque, Cassiano; Ribeiro Silva, Adriana; Ignácio da Silva, Camila; Caire Castro-Faria-Neto, Hugo; Burth, Patrícia

2017-04-21

Lung cancer is a leading cause of global cancer deaths. Na/K-ATPase has been studied as a target for cancer treatment. Cardiotonic steroids (CS) trigger intracellular signalling upon binding to Na/K-ATPase. Normal lung and tumour cells frequently express different pump isoforms. Thus, Na/K-ATPase is a powerful target for lung cancer treatment. Drugs targeting Na/K-ATPase may induce apoptosis and autophagy in transformed cells. We argue that Na/K-ATPase has a role as a potential target in chemotherapy in lung cancer treatment. We discuss the effects of Na/K-ATPase ligands and molecular pathways inducing deleterious effects on lung cancer cells, especially those leading to apoptosis and autophagy.

Subnitride chemistry: A first-principles study of the NaBa3N, Na5Ba3N, and Na16Ba6N phases

International Nuclear Information System (INIS)

Oliva, Josep M.

2005-01-01

An ab initio study on the electronic structure of the subnitrides NaBa 3 N, Na 5 Ba 3 N, and Na 16 Ba 6 N is performed for the first time. The NaBa 3 N and Na 5 Ba 3 N phases consist of infinite 1 ∞ [NBa 6/2 ] strands composed of face-sharing NBa 6 octahedra surrounded by a 'sea' of sodium atoms. The Na 16 Ba 6 N phase consist of discrete [NBa 6 ] octahedra arranged in a body-cubic fashion, surrounded by a 'sea' of sodium atoms. Our calculations suggest that the title subnitrides are metals. Analysis of the electronic structure shows partial interaction of N(2s) with Ba(5p) electrons in the lower energy region for NaBa 3 N and Na 5 Ba 3 N. However, no dispersion is observed for the N(2s) and Ba(5p) bands in the cubic phase Na 16 Ba 6 N. The metallic band below the Fermi level shows a strong mixing of N(2p), Ba(6s), Ba(5d), Ba(6p), Na(3s) and Na(3p) orbitals. The metallic character in these nitrides stems from delocalized electrons corresponding to hybridized 5d l 6s m 6p n barium orbitals which interact with hybridized 3s n 3p m sodium orbitals. Analysis of the electron density and electronic structure in these nitrides shows two different regions: a metallic matrix corresponding to the sodium atoms and the regions around them and heteropolar bonding between nitrogen and barium within the infinite 1 ∞ [NBa 6/2 ] strands of the NaBa 3 N and Na 5 Ba 3 N phases, and within the isolated [NBa 6 ] octahedra of the Na 16 Ba 6 N phase. The nitrogen atoms inside the strands and octahedra are negatively charged, the anionic character of nitrogens being larger in the isolated octahedra of the cubic phase Na 16 Ba 6 N, due to the lack of electron delocalization along one direction as opposed to the other phases. The sodium and barium atoms appear to be slightly negatively and positively charged, the latter to a larger extent. From the computed Ba-N overlap populations as well as the analysis of the contour maps of differences between total density and superposition of

Teratological studies of DTPA-CaNa3, DTPA-ZnNa3 and quinamic acid in mice

International Nuclear Information System (INIS)

Luo Meichu; Ruan Tianming; Tong Shungao

1989-01-01

DTPA-CaNa 3 , DTPA-ZnNa 3 and quinamic acid are effective chelating agents for removing actinide elements from the body. In this experiment, different doses of DTPA-CaNa 3 , DTPA-ZnNa 3 and quinamic acid were given to mice on gestation days 6-10. Eight groups of mice received 0.8 and 2.0 mM/kg of DTPA-CaNa 3 , 3.8, 7.6, and 11.4 mM/kg of DTPA-ZnNa 3 and 0.42, 2.1, and 4.2 mM/kg of quinamic acid. Hypetonic saline and isotonic saline were given to two control groups. DTPA-CaNa 3 and quinamidic acid were found to be much more toxic to fetus of mice than DTPA-ZnNa 3 . When the doses of DTPA-CaMa 3 and quinamidic acid were 20 times higher than the human dose, the number of resorbed fetus was increased and the number and weight of live fetus were reduced. The result of injection with 7.6 mM/kg (200 times of human dose)DTPA-ZnNa 3 and that of injection with isotonic saline are the same. Therefore, we suggest that the DTPA-CaNa 3 and quinamidic acid should not be given to pregnant woman, if chelation therapy is needed, while the much safer DTPA-ZnNa 3 could be used

Dgroup: DG01673 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bup...ivacaine hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... DG00802 ...

Dgroup: DG01655 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 130 ... Apraclonidine ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomi...dine (INN) ... D03702 ... Detomidine hydrochloride (USAN) DG01320 ... Medetomidine ... D08165 ...

Na-ion dynamics in Quasi-1D compound NaV2O4

International Nuclear Information System (INIS)

Månsson, M; Umegaki, I; Nozaki, H; Higuchi, Y; Sugiyama, J; Kawasaki, I; Watanabe, I; Sakurai, H

2014-01-01

We have used the pulsed muon source at ISIS to study high-temperature Na-ion dynamics in the quasi-one-dimensional (Q1D) metallic antiferromagnet NaV 2 O 4 . By performing systematic zero-field and longitudinal-field measurements as a function of temperature we clearly distinguish that the hopping rate increases exponentially above T diff ≈ 250 K. The data is well fitted to an Arrhenius type equation typical for a diffusion process, showing that the Na-ions starts to be mobile above T diff . Such results make this compound very interesting for the tuning of Q1D magnetism using atomic-scale ion-texturing through the periodic potential from ordered Na-vacancies. Further, it also opens the door to possible use of NaV 2 O 4 and related compounds in energy related applications

Dgroup: DG00462 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00462 Chemical ... DGroup Estradiol ... D00105 ... Estradiol (JAN/USP/INN) ... D01413 ... Estr...adiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) D04061 ... Estr...adiol acetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) D04065 ... Estr...adiol undecylate (USAN/INN) D07918 ... Estradiol hemihydrate D07919 ... Estr...adiol 17 beta-hemisuccinate Other ... DG01584 ... Estrogen receptor agonist ... DG01986 ... Estrogen Cyp substrate ... DG0

Dgroup: DG01600 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01600 DGroup Bisphosphonate -dronic acid, -dronate ... DG00780 ... Etidronic acid ... D02373 ... Etidron...ic acid (USAN/INN) ... D00314 ... Etidronate disodium (JP17/USP) ... DG00781 ... Clodronic acid ... D03545 ... Clodron...ic acid (USAN/INN) ... D03544 ... Clodronate disodium (USAN); Sodium clodronate hydrate (JAN) ... D07720 ... Clodron...ic acid disodium salt DG00782 ... Pamidronic acid ... D07281 ... Pamidronic acid (INN) ... D00941 ... Pamidron...ate disodium (USAN); Pamidronate disodium hydrate (JAN) ... DG00783 ... Alendronic acid ... D07119 ... Alendron

O Passeio Público do Rio de Janeiro na Literatura, na Pintura e na Fotografia do Século XIX

Directory of Open Access Journals (Sweden)

Solange de Aragão

2012-06-01

Full Text Available Este artigo tem como objetivo geral e mais amplo chamar a atenção dos pesquisadores para a importância da literatura, da pintura e da fotografia como fontes documentais para a construção da História do Paisagismo no Brasil por meio de um estudo de caso muito particular: o Passeio Público do Rio de Janeiro no século XIX. São objetivos específicos apresentar e analisar o modo como esse espaço livre público aparece na literatura, na pintura e na fotografia desse período, considerando suas transformações paisagísticas.

Solubility of NaNd(CO3)2.6H2O(c) in concentrated Na2CO3 and NaHCO3 solutions

International Nuclear Information System (INIS)

Rao, L.; Rai, D.; Felmy, A.R.; Fulton, R.W.; Novak, C.F.

1996-01-01

NaNd(CO 3 ) 2 x 6 H 2 O(c) was identified to be the final equilibrium solid phase in suspensions containing concentrated sodium carbonate (0.1 to 2.0 M) and sodium bicarbonate (0.1 to 1.0 M), with either NaNd(CO 3 ) 2 x 6 H 2 O(c) or Nd 2 (CO 3 ) 3 x xH 2 O(s) as initial solids. A thermodynamic model, based on Pitzer's specific into-interaction approach, was developed to interpret the solubility of NaNd(CO 3 ) 2 x 6 H 2 O(c) as functions of sodium carbonate and sodium bicarbonate concentrations. In this model, the solubility data of NaNd(CO 3 ) 2 x 6 H 2 O(c) were explained by assuming the formation of NdCO 3 + , Nd(CO 3 ) 2 - and Nd(CO 3 ) 3 3- species and invoking the specific ion interactions between Na + and Nd(CO 3 ) 3 3- . Ion interaction parameters for Na + -Nd(CO 3 ) 3 3- were developed to fit the solubility data. Based on the model calculations, Nd(CO 3 ) 3 3- was the predominant aqueous neodymium species in 0.1 to 2 M sodium carbonate and 0.1 to 1 M sodium bicarbonate solutions. The logarithm of the NaNd(CO 3 ) 2 x 6 H 2 O solubility product (NaNd(CO 3 ) 2 x 6 H 2 O(c)=Na + +Nd 3+ +2 CO 3 2- +6 H 2 O) was calculated to be -21.39. This model also provided satisfactory interpretation of the solubility data of the analogous Am(III) system in less concentrated carbonate and bicarbonate solutions. (orig.)

Dgroup: DG01495 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available n (USAN/INN) ... D00626 ... Candesartan cilexetil (JP17/USAN) ... D00627 ... Telmisartan (JP17/USAN/INN); Telmisartan tablet...N); Olmesartan medoxomil tablets (JP17) ... DG00351 ... Azilsartan ... D08864 ... Azilsarta

Evidências da eficácia da eletroconvulsoterapia na prática psiquiátrica Evidencias de la eficacia de la electroconvulsoterapia en la práctica psiquiátrica Evidence of the effectiveness of electroconvulsive therapy in the psychiatric practice

Directory of Open Access Journals (Sweden)

Carolina Meira Moser

2005-12-01

Full Text Available A eletroconvulsoterapia (ECT consiste em tratamento biológico ainda não amplamente utilizado na prática psiquiátrica, devido aos inúmeros fatores que contribuem para uma resistência acerca do método. Objetivando sustentar, com embasamento científico, o emprego da ECT, agregamos evidências de sua eficácia, indicações, contra-indicações e efeitos adversos, advindas dos principais ensaios clínicos randomizados e meta-análises disponíveis na literatura médica atual sobre o tema (PubMed/MEDLINE, Cochrane.La electroconvulsoterapia (ECT consiste en tratamiento biológico todavía no ampliamente utilizado en la práctica psiquiátrica, debido a los innúmeros factores que contribuyen a una resistencia al método. Objetivando sostener, con embasamiento científico, el empleo de la ECT, añadimos evidencias de su eficacia, indicaciones, contraindicaciones y efectos secundarios, advenidos de los principales ensayos clínicos aleatorios y meta-análisis disponibles en la literatura médica actual sobre el tema (PubMed/MEDLINE, Cochrane.The electroconvulsive therapy is a biological treatment not widely used in the psychiatric practice. A number of factors contribute to resistance concerning this method. The goal of the present article is to provide scientific support to the use of electroconvulsive therapy by showing its effectiveness, indications, contraindications and adverse effects. Such factors were searched in the major randomized clinical trials and meta-analyses available in the current medical literature on the subject (PubMed/MEDLINE, Cochrane.

Dgroup: DG01683 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D05739 ... Rivoglitazone (USAN/INN) Antidiabetic agent ... DG01685 ... Insulin sensitizer ... DG01795 ... PPAR gamma... agonist Other ... DG01733 ... PPAR agonist Unclassified ... DG02044 ... Hypoglycemics ATC code: A10BG Antidiabetic

Dgroup: DG01794 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available rtugliflozin (USAN/INN) D10669 ... Sotagliflozin (USAN/INN) Antidiabetic agent Uncla...ssified ... DG02044 ... Hypoglycemics ATC code: A10BK Antidiabetics SLC5A2 (SGLT2) [HSA:6524] [KO:K14382] ...

Dgroup: DG01567 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available am (JP17/USP/INN) ... D00280 ... Clonazepam (JP17/USP/INN); Clonazepam fine granules (JP17); Clonazepam tablets ...N); Etizolam fine granules (JP17); Etizolam tablets (JP17) ... D01593 ... Nimetazepam

Mechanism of μ-conotoxin PIIIA binding to the voltage-gated Na+ channel NaV1.4.

Directory of Open Access Journals (Sweden)

Rong Chen

Full Text Available Several subtypes of voltage-gated Na+ (NaV channels are important targets for pain management. μ-Conotoxins isolated from venoms of cone snails are potent and specific blockers of different NaV channel isoforms. The inhibitory effect of μ-conotoxins on NaV channels has been examined extensively, but the mechanism of toxin specificity has not been understood in detail. Here the known structure of μ-conotoxin PIIIA and a model of the skeletal muscle channel NaV1.4 are used to elucidate elements that contribute to the structural basis of μ-conotoxin binding and specificity. The model of NaV1.4 is constructed based on the crystal structure of the bacterial NaV channel, NaVAb. Six different binding modes, in which the side chain of each of the basic residues carried by the toxin protrudes into the selectivity filter of NaV1.4, are examined in atomic detail using molecular dynamics simulations with explicit solvent. The dissociation constants (Kd computed for two selected binding modes in which Lys9 or Arg14 from the toxin protrudes into the filter of the channel are within 2 fold; both values in close proximity to those determined from dose response data for the block of NaV currents. To explore the mechanism of PIIIA specificity, a double mutant of NaV1.4 mimicking NaV channels resistant to μ-conotoxins and tetrodotoxin is constructed and the binding of PIIIA to this mutant channel examined. The double mutation causes the affinity of PIIIA to reduce by two orders of magnitude.

Muscle K+, Na+, and Cl- disturbances and Na+-K+ pump inactivation: implications for fatigue

DEFF Research Database (Denmark)

McKenna, Michael J; Bangsbo, Jens; Renaud, Jean-Marc

2008-01-01

(+)-ATPase activity during exercise stabilizes Na(+) and K(+) concentration gradients and membrane excitability and thus protects against fatigue. However, during intense contraction some Na(+)-K(+) pumps are inactivated and together with further ionic disturbances, likely precipitate muscle fatigue.......Membrane excitability is a critical regulatory step in skeletal muscle contraction and is modulated by local ionic concentrations, conductances, ion transporter activities, temperature, and humoral factors. Intense fatiguing contractions induce cellular K(+) efflux and Na(+) and Cl(-) influx......, causing pronounced perturbations in extracellular (interstitial) and intracellular K(+) and Na(+) concentrations. Muscle interstitial K(+) concentration may increase 1- to 2-fold to 11-13 mM and intracellular K(+) concentration fall by 1.3- to 1.7-fold; interstitial Na(+) concentration may decline by 10 m...

Route, mechanism, and implications of proton import during Na+/K+ exchange by native Na+/K+-ATPase pumps

Science.gov (United States)

Vedovato, Natascia

2014-01-01

A single Na+/K+-ATPase pumps three Na+ outwards and two K+ inwards by alternately exposing ion-binding sites to opposite sides of the membrane in a conformational sequence coupled to pump autophosphorylation from ATP and auto-dephosphorylation. The larger flow of Na+ than K+ generates outward current across the cell membrane. Less well understood is the ability of Na+/K+ pumps to generate an inward current of protons. Originally noted in pumps deprived of external K+ and Na+ ions, as inward current at negative membrane potentials that becomes amplified when external pH is lowered, this proton current is generally viewed as an artifact of those unnatural conditions. We demonstrate here that this inward current also flows at physiological K+ and Na+ concentrations. We show that protons exploit ready reversibility of conformational changes associated with extracellular Na+ release from phosphorylated Na+/K+ pumps. Reversal of a subset of these transitions allows an extracellular proton to bind an acidic side chain and to be subsequently released to the cytoplasm. This back-step of phosphorylated Na+/K+ pumps that enables proton import is not required for completion of the 3 Na+/2 K+ transport cycle. However, the back-step occurs readily during Na+/K+ transport when external K+ ion binding and occlusion are delayed, and it occurs more frequently when lowered extracellular pH raises the probability of protonation of the externally accessible carboxylate side chain. The proton route passes through the Na+-selective binding site III and is distinct from the principal pathway traversed by the majority of transported Na+ and K+ ions that passes through binding site II. The inferred occurrence of Na+/K+ exchange and H+ import during the same conformational cycle of a single molecule identifies the Na+/K+ pump as a hybrid transporter. Whether Na+/K+ pump–mediated proton inflow may have any physiological or pathophysiological significance remains to be clarified. PMID

Route, mechanism, and implications of proton import during Na+/K+ exchange by native Na+/K+-ATPase pumps.

Science.gov (United States)

Vedovato, Natascia; Gadsby, David C

2014-04-01

A single Na(+)/K(+)-ATPase pumps three Na(+) outwards and two K(+) inwards by alternately exposing ion-binding sites to opposite sides of the membrane in a conformational sequence coupled to pump autophosphorylation from ATP and auto-dephosphorylation. The larger flow of Na(+) than K(+) generates outward current across the cell membrane. Less well understood is the ability of Na(+)/K(+) pumps to generate an inward current of protons. Originally noted in pumps deprived of external K(+) and Na(+) ions, as inward current at negative membrane potentials that becomes amplified when external pH is lowered, this proton current is generally viewed as an artifact of those unnatural conditions. We demonstrate here that this inward current also flows at physiological K(+) and Na(+) concentrations. We show that protons exploit ready reversibility of conformational changes associated with extracellular Na(+) release from phosphorylated Na(+)/K(+) pumps. Reversal of a subset of these transitions allows an extracellular proton to bind an acidic side chain and to be subsequently released to the cytoplasm. This back-step of phosphorylated Na(+)/K(+) pumps that enables proton import is not required for completion of the 3 Na(+)/2 K(+) transport cycle. However, the back-step occurs readily during Na(+)/K(+) transport when external K(+) ion binding and occlusion are delayed, and it occurs more frequently when lowered extracellular pH raises the probability of protonation of the externally accessible carboxylate side chain. The proton route passes through the Na(+)-selective binding site III and is distinct from the principal pathway traversed by the majority of transported Na(+) and K(+) ions that passes through binding site II. The inferred occurrence of Na(+)/K(+) exchange and H(+) import during the same conformational cycle of a single molecule identifies the Na(+)/K(+) pump as a hybrid transporter. Whether Na(+)/K(+) pump-mediated proton inflow may have any physiological or

Growth mechanism of NaClO 3 and NaBrO 3 crystals from aqueous ...

Indian Academy of Sciences (India)

A study of growth rates of NaClO3 and NaBrO3 has been carried out using a small growth cell by in situ observation. Normal growth rates of {100} faces of NaClO3 and {111} faces of NaBrO3 along ⟨ 110 ⟩ direction are measured under relatively high supersaturation ranging from 3–8%. In the initial stages of growth, {100}, ...

Rescue of Na+ affinity in aspartate 928 mutants of Na+,K+-ATPase by secondary mutation of glutamate 314.

Science.gov (United States)

Holm, Rikke; Einholm, Anja P; Andersen, Jens P; Vilsen, Bente

2015-04-10

The Na(+),K(+)-ATPase binds Na(+) at three transport sites denoted I, II, and III, of which site III is Na(+)-specific and suggested to be the first occupied in the cooperative binding process activating phosphorylation from ATP. Here we demonstrate that the asparagine substitution of the aspartate associated with site III found in patients with rapid-onset dystonia parkinsonism or alternating hemiplegia of childhood causes a dramatic reduction of Na(+) affinity in the α1-, α2-, and α3-isoforms of Na(+),K(+)-ATPase, whereas other substitutions of this aspartate are much less disruptive. This is likely due to interference by the amide function of the asparagine side chain with Na(+)-coordinating residues in site III. Remarkably, the Na(+) affinity of site III aspartate to asparagine and alanine mutants is rescued by second-site mutation of a glutamate in the extracellular part of the fourth transmembrane helix, distant to site III. This gain-of-function mutation works without recovery of the lost cooperativity and selectivity of Na(+) binding and does not affect the E1-E2 conformational equilibrium or the maximum phosphorylation rate. Hence, the rescue of Na(+) affinity is likely intrinsic to the Na(+) binding pocket, and the underlying mechanism could be a tightening of Na(+) binding at Na(+) site II, possibly via movement of transmembrane helix four. The second-site mutation also improves Na(+),K(+) pump function in intact cells. Rescue of Na(+) affinity and Na(+) and K(+) transport by second-site mutation is unique in the history of Na(+),K(+)-ATPase and points to new possibilities for treatment of neurological patients carrying Na(+),K(+)-ATPase mutations. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

78 FR 29374 - National Institute of Environmental Health Sciences Amended; Notice of Meeting

Science.gov (United States)

2013-05-20

....m. to June 6, 2013, 05:00 p.m., Hilton Garden Inn Durham Southpoint Hotel, 7007 Fayetteville Road... meeting location from the Hilton Garden Inn Durham Southpoint Hotel to the DoubleTree by Hilton Hotel. The...

Dgroup: DG01573 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ate semisodium (INN) ... D00710 ... Valproate sodium (USAN); Sodium valproate (JP17) ... D08667 ... Calcium valproate DG01006 ... Flunar...izine ... D07971 ... Flunarizine (INN) ... D01303 ... Flunarizine hydrochloride (JAN/USAN) DG01382 ... E

The system NaVO3-Na2WO4-Na2W2O7

International Nuclear Information System (INIS)

Kazanbekov, V.R.; Gasanaliev, A.M.; Kazanbekov, R.G.

1994-01-01

Phase diagrams of sodium metavanadate-sodium ditungstate, sodium metavanadate-sodium tungstate systems and surface of primary crystallization of sodium metavabadate-sodium tungstate-sodium ditungstate system were studied. The system sodium metavanadate-sodium ditungstate is eutectic one. Compound NaVO 3 x2Na 2 WO 4 is formed in solid state in sodium metavanadate-sodium tungstate system. Liquidus surface of sodium metavanadate-sodium tungstate-sodium ditungstate is presented by three crystallization fields of initial components. Composition and melting point of ternary eutectics are determined

Summer sudden Na number density enhancements measured with the ALOMAR Weber Na Lidar

Directory of Open Access Journals (Sweden)

D. Heinrich

2008-05-01

Full Text Available We present summer Na-densities and atmospheric temperatures measured 80 to 110 km above the Arctic Lidar Observatory for Middle Atmosphere Research (ALOMAR. The Weber Na Lidar is part of ALOMAR, located at 69° N in Norway, 150 km north of the Arctic Circle. The sun does not set here during the summer months, and measurements require a narrowband Faraday Anomalous Dispersion Optical Filter (FADOF.

We discuss an observed sudden enhancement in the Na number density around 22:00 UT on 1 to 2 June 2006. We compare this observation with previous summer measurements and find a frequent appearance of Na number density enhancements near local midnight. We describe the time of appearance, the altitude distribution, the duration and the strength of these enhancements and compare them to winter observations. We investigate possible formation mechanisms and, as others before, we find a strong link between these Na number density enhancements and sporadic E layers.

Summer sudden Na number density enhancements measured with the ALOMAR Weber Na Lidar

Directory of Open Access Journals (Sweden)

D. Heinrich

2008-05-01

Full Text Available We present summer Na-densities and atmospheric temperatures measured 80 to 110 km above the Arctic Lidar Observatory for Middle Atmosphere Research (ALOMAR. The Weber Na Lidar is part of ALOMAR, located at 69° N in Norway, 150 km north of the Arctic Circle. The sun does not set here during the summer months, and measurements require a narrowband Faraday Anomalous Dispersion Optical Filter (FADOF. We discuss an observed sudden enhancement in the Na number density around 22:00 UT on 1 to 2 June 2006. We compare this observation with previous summer measurements and find a frequent appearance of Na number density enhancements near local midnight. We describe the time of appearance, the altitude distribution, the duration and the strength of these enhancements and compare them to winter observations. We investigate possible formation mechanisms and, as others before, we find a strong link between these Na number density enhancements and sporadic E layers.

Dgroup: DG01430 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01430 Chemical ... DGroup Paclitaxel ... D00491 ... Paclitaxel (JAN/USP/INN) ... D05333 ... Paclitax...el poliglumex (USAN/INN) ... Antineoplastics, taxane TUBB [HSA:10381 10382 10383 203068 347688 347733 7280 81027 84617] [KO:K07375] ...

Muziki wa Hip Hop na Haki Za Kijamii: Dhima, Changamoto na ...

African Journals Online (AJOL)

Ni dhahiri kuwa haki za kijamii zinaweza kuwasilishwa kwa jamii pana kupitia sanaa ya hip hop. Makala haya basi, yanabainisha dhima na mchango wa muziki wa hip hop katika masuala ya haki za kijamii, yanafafanua changamoto za muziki huu katika kuwasilisha haki za kijamii na kutoa mapendekezo kwa makundi ...

Sequential growth of sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell–shell nanoparticles for photodynamic therapy

Energy Technology Data Exchange (ETDEWEB)

Peng, Huang-Yong; Ding, Bin-Bin; Ma, Yin-Chu [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Sun, Shi-Qi [State Key Laboratory of Veterinary Etiological Biology and Key Laboratory of Animal Virology of Ministry of Agriculture, Lanzhou Veterinary Research Institute, Chinese Academy of Agricultural Sciences, Xujiaping 1, Lanzhou, Gansu 730046 (China); Tao, Wei [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Guo, Yan-Chuan [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Guo, Hui-Chen, E-mail: ghch-2004@hotmail.com [State Key Laboratory of Veterinary Etiological Biology and Key Laboratory of Animal Virology of Ministry of Agriculture, Lanzhou Veterinary Research Institute, Chinese Academy of Agricultural Sciences, Xujiaping 1, Lanzhou, Gansu 730046 (China); Yang, Xian-Zhu, E-mail: yangxz@hftu.edu.cn [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Qian, Hai-Sheng, E-mail: shqian@hfut.edu.cn [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China)

2015-12-01

Graphical abstract: The monodisperse elliptical NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell–shell nanoparticles have been synthesized successfully by a facile sequential growth process, which can be used as transducer for photodynamic therapy of cancer cells. - Highlights: • The NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb nanoparticles have been fabricated successfully. • The as-prepared nanoparticles show strong fluorescence excited at 980 or 808 nm. • The nanoparticles were transferred into the aqueous phase via a facile process. • Photosensitizers were loaded into the composites for photodynamic therapy. - Abstract: Upconversion (UC) nanostructures have attracted much interest for their extensive biological applications. In this work, we describe a sequential synthetic route to prepare sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell upconversion nanoparticles. The as-prepared products were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM, JEM 2100F), respectively. The as-prepared core–shell nanoparticles of NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb are composed of elliptical nanoparticles with a length of 80 nm and width of 42 nm, which show efficient upconversion fluorescence excited at 808 nm indicating the formation of core–shell–shell sandwiched nanostructures. In addition, the as-prepared sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell upconversion nanoparticles also show strong upconversion fluorescence excited at 980 nm. Amphiphilic mPEG{sub 2k}-b-PEBEP{sub 6K} copolymers (denoted as PPE) were chosen to transfer these hydrophobic UCNPs into the aqueous phase for biological application. In vitro photodynamic therapy of cancer cells show that the viability of cells incubated with the nanoparticles loaded with MC 540 was significantly lower as compared to the nanoparticles without photosensitizers exposed to NIR laser.

Intracellular Na+ regulation of Na+ pump sites in cultured vascular smooth muscle cells

International Nuclear Information System (INIS)

Allen, J.C.; Navran, S.S.; Seidel, C.L.; Dennison, D.K.; Amann, J.M.; Jemelka, S.K.

1989-01-01

Enzymatically dispersed cells from canine saphenous vein and femoral artery were grown in fetal calf serum and studied at day 0 (freshly dispersed) through confluence in primary culture. Intracellular Na levels (Nai), but not intracellular K (Ki), were increased after 24 h in culture and then decreased to a steady state by 4 days. Na+ pump site number [( 3 H] ouabain binding) increased through day 3 and remained elevated. Nai was still elevated at 2 days when the Na+ pump site number began to increase. Total pump turnover (maximum ouabain-inhibited 86 Rb uptake) reflected the increase in Na+ pump site number. These key events precede the observed increases in both protein production and cellular proliferation. If the same cells are maintained in defined medium, without fetal calf serum, Nai, Ki, and the number of [ 3 H]ouabain binding sites do not change with time. These data are consistent with the suggestion that the initial mitogenic response of vascular smooth muscle cells to fetal calf serum involves an increased Na+ influx, and a Nai accumulation, caused by low Na+ pump density. The synthesis of new pump sites effects a decrease in the accumulated Nai, which may be related to cell proliferation

Najczęściej występujące przyczyny i rodzaje alergii u dzieci w świetle aktualnej epidemiologii

Directory of Open Access Journals (Sweden)

Ewa Dadas-Stasiak

2010-09-01

Full Text Available Alergia jest to nadmierna, swoista odpowiedź immunologiczna na czynniki zewnętrzne, która prowadzi do wystąpienia objawów chorobowych. W 1963 roku Coombs i Gell wprowadzili klasyfikację czterech typów reakcji alergicznej: reakcja typu natychmiastowego – typ I, reakcja typu cytotoksycznego – typ II, reakcja typu kompleksów immunologicznych – typ III, reakcja typu komórkowego – typ IV. W ostatnich latach obserwuje się zwiększenie zachorowalności na choroby o podłożu alergicznym u dzieci. Uważa się, że do 2015 roku co drugie dziecko będzie miało objawy alergii. W przeprowadzonych w latach 2006-2008 badaniach ECAP (Epidemiologia Chorób Alergicznych w Polsce stwierdzono, że alergia pokarmowa występuje u około 13% dzieci w wieku 6-7 lat i 11% dzieci w wieku 13-14 lat, atopowe zapalenie skóry (AZS – u około 9% dzieci w obu grupach wiekowych, alergiczny nieżyt nosa (ANN – u 24% dzieci w wieku 6-7 lat i 30% dzieci w wieku 13-14 lat, a astma – u około 11% dzieci w obu grupach wiekowych. Do czynników wywołujących objawy alergiczne u dzieci należą przede wszystkim alergeny wziewne i pokarmowe. Znacznie rzadziej objawy alergii występują po ukąszeniach przez owady, po stosowanych lekach czy też po alergenach kontaktowych. W okresie niemowlęcym oraz wczesnodziecięcym dominują alergeny pokarmowe wywołujące objawy ze strony przewodu pokarmowego oraz skóry, w późniejszym wieku – alergeny wziewne, które są odpowiedzialne za wystąpienie objawów alergicznego nieżytu nosa oraz astmy. Wyróżnia się dwie grupy alergenów wziewnych: alergeny zewnątrzdomowe (pyłki roślin, zarodniki grzybów oraz wewnątrzdomowe (roztocza kurzu domowego, zarodniki grzybów, sierści zwierząt, alergeny karaluchów.

On the Stability of NaO2 in Na-O2 Batteries.

Science.gov (United States)

Liu, Chenjuan; Carboni, Marco; Brant, William R; Pan, Ruijun; Hedman, Jonas; Zhu, Jiefang; Gustafsson, Torbjörn; Younesi, Reza

2018-04-25

Na-O 2 batteries are regarded as promising candidates for energy storage. They have higher energy efficiency, rate capability, and chemical reversibility than Li-O 2 batteries; in addition, sodium is cheaper and more abundant compared to lithium. However, inconsistent observations and instability of discharge products have inhibited the understanding of the working mechanism of this technology. In this work, we have investigated a number of factors that influence the stability of the discharge products. By means of in operando powder X-ray diffraction study, the influence of oxygen, sodium anode, salt, solvent, and carbon cathode were investigated. The Na metal anode and an ether-based solvent are the main factors that lead to the instability and decomposition of NaO 2 in the cell environment. This fundamental insight brings new information on the working mechanism of Na-O 2 batteries.

NaK handling and removal

International Nuclear Information System (INIS)

Desreumaux, J.; Rodriguez, G.; Guigon, A.; Verdelli, J.; Thomine, G.

1997-01-01

Sodium-potassium alloy is used in specific application in French Fast Breeder Reactors as: cold traps, NaK bubbler for argon purification, valves and also in experimental irradiation devices. lt has been preferred to sodium because it is liquid from + 7 deg. C for the most common peritectic alloy. After its use, NaK is considered as a hazardous waste (nuclear or not) due to its high reactivity with air and water. The most important risk remains in handling NaK systems which have not been operated for some time. The NaK will be covered with a crust of the superoxide K02 which is a strong oxidising agent. Thermodynamically, K02 will react with most organic material or metallic dust or swarfs and can also react with additional NaK to give sufficient heat to boil part of the NaK, resulting in a sudden increase in pressure and small explosions. We describe the formation given to experimenters in our Sodium School and the CEA's experience in treating specific devices for transportation, decanting of tanks, tank opening and NaK removal. (author)

Angiotensin II-induced hypertension increases plasma membrane Na pump activity by enhancing Na entry in rat thick ascending limbs.

Science.gov (United States)

Gonzalez-Vicente, Agustin; Garvin, Jeffrey L

2013-11-01

Thick ascending limbs (TAL) reabsorb 30% of the filtered NaCl load. Na enters the cells via apical Na-K-2Cl cotransporters and Na/H exchangers and exits via basolateral Na pumps. Chronic angiotensin II (ANG II) infusion increases net TAL Na transport and Na apical entry; however, little is known about its effects on the basolateral Na pump. We hypothesized that in rat TALs Na pump activity is enhanced by ANG II-infusion, a model of ANG II-induced hypertension. Rats were infused with 200 ng·kg(-1)·min(-1) ANG II or vehicle for 7 days, and TAL suspensions were obtained. We studied plasma membrane Na pump activity by measuring changes in 1) intracellular Na (Nai) induced by ouabain; and 2) ouabain-sensitive oxygen consumption (QO2). We found that the ouabain-sensitive rise in Nai in TALs from ANG II-infused rats was 12.8 ± 0.4 arbitrary fluorescent units (AFU)·mg(-1)·min(-1) compared with only 9.9 ± 1.1 AFU·mg(-1)·min(-1) in controls (P Na pump expression, the number of Na pumps in the plasma membrane, or the affinity for Na. When furosemide (1.1 mg·kg(-1)·day(-1)) was coinfused with ANG II, no increase in plasma membrane Na pump activity was observed. We concluded that in ANG II-induced hypertension Na pump activity is increased in the plasma membrane of TALs and that this increase is caused by the chronically enhanced Na entry occurring in this model.

Analýza nápojů slazených extrakty stévie cukerné

OpenAIRE

Procházka, Václav

2013-01-01

Steviolglykosidy jsou přírodní sladivé látky Stévie sladké (Stevia rebaudiana Bertoni), které příznivě působí na lidské zdraví a jejich relativní sladivost je 300krát vyšší než sladivost sacharózy. Jsou proto využívány ke slazení komerčních výrobků. Vzhledem k jejich potenciálním vlastnostem je výhodné mít vhodnou metodu pro jejich sledování. Vysokoúčinná kapalinová chromatografie (HPLC) je založena na principu rozdělování analytu mezi dvě vzájemně nemísitelné fáze pomocí vysokotlakého čerpad...

Dgroup: DG01630 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01630 DGroup beta-Estrogen receptor agonist -berel ... D06631 ... Prinaberel (USAN/INN...) D09899 ... Erteberel (USAN/INN) Other ... DG01584 ... Estrogen receptor agonist ... NR3A2 (ESR2) [HSA:2100] [KO:K08551] ...

Silicene for Na-ion battery applications

KAUST Repository

Zhu, Jiajie

2016-08-19

Na-ion batteries are promising candidates to replace Li-ion batteries in large scale applications because of the advantages in natural abundance and cost of Na. Silicene has potential as the anode in Li-ion batteries but so far has not received attention with respect to Na-ion batteries. In this context, freestanding silicene, a graphene-silicene-graphene heterostructure, and a graphene-silicene superlattice are investigated for possible application in Na-ion batteries, using first-principles calculations. The calculated Na capacities of 954mAh/g for freestanding silicene and 730mAh/g for the graphenesilicene superlattice (10% biaxial tensile strain) are highly competitive and potentials of >0.3 V against the Na/Na potential exceed the corresponding value of graphite. In addition, the diffusion barriers are predicted to be <0.3 eV.

Hydrolysis of Rice Straw Pretreated by Na2SO3 Over Fe-resin/NaCl

Directory of Open Access Journals (Sweden)

YANG Hui

2017-05-01

Full Text Available To increase the conversion of rice straw(RS and the yield of products, we employed three methods, which were ultrasonic wave, steam explosion and Na2SO3 pretreatment to pretreat RS(the treated RS noted as CS-RS, ZQ-RS and Na2SO3-RS, respectively and found that Na2SO3 treatment was the best pretreatment method based on XRD, SEM, elemental analysis and content of cellulose, hemicellulose and lignin. The conversion of Na2SO3-RS and the yield of total reducing sugar(TRS and levulinic acid(LA were 97.3%, 29.6% and 13.5%, respectively by 10% Fe-resin in 3.3% NaCl solution under 200 ℃.

Na+/H+ and Na+/NH4+ exchange activities of zebrafish NHE3b expressed in Xenopus oocytes

Science.gov (United States)

Ito, Yusuke; Kato, Akira; Hirata, Taku; Hirose, Shigehisa

2014-01-01

Zebrafish Na+/H+ exchanger 3b (zNHE3b) is highly expressed in the apical membrane of ionocytes where Na+ is absorbed from ion-poor fresh water against a concentration gradient. Much in vivo data indicated that zNHE3b is involved in Na+ absorption but not leakage. However, zNHE3b-mediated Na+ absorption has not been thermodynamically explained, and zNHE3b activity has not been measured. To address this issue, we overexpressed zNHE3b in Xenopus oocytes and characterized its activity by electrophysiology. Exposure of zNHE3b oocytes to Na+-free media resulted in significant decrease in intracellular pH (pHi) and intracellular Na+ activity (aNai). aNai increased significantly when the cytoplasm was acidified by media containing CO2-HCO3− or butyrate. Activity of zNHE3b was inhibited by amiloride or 5-ethylisopropyl amiloride (EIPA). Although the activity was accompanied by a large hyperpolarization of ∼50 mV, voltage-clamp experiments showed that Na+/H+ exchange activity of zNHE3b is electroneutral. Exposure of zNHE3b oocytes to medium containing NH3/NH4+ resulted in significant decreases in pHi and aNai and significant increase in intracellular NH4+ activity, indicating that zNHE3b mediates the Na+/NH4+ exchange. In low-Na+ (0.5 mM) media, zNHE3b oocytes maintained aNai of 1.3 mM, and Na+-influx was observed when pHi was decreased by media containing CO2-HCO3− or butyrate. These results provide thermodynamic evidence that zNHE3b mediates Na+ absorption from ion-poor fresh water by its Na+/H+ and Na+/NH4+ exchange activities. PMID:24401990

The relation between aging, aortic NaF avidity and coronary artery NaF avidity: A NaF PET CT study

DEFF Research Database (Denmark)

Blomberg, Björn; Thomassen, Anders; Hildebrandt, Malene

2013-01-01

volunteers without traditional cardiovascular risk factors were prospectively assessed by Sodium 18-Fluoride (Na-18F) PET CT imaging. Global aortic uptake of Na-18F was determined by calculating the average aortic blood pool subtracted maximum standardized uptake value (cSUV) [maximum SUVaorta - mean...

Concept of restaurant reservations information system

OpenAIRE

Štok, Janez

2016-01-01

In our home place we have only one inn. It's occupied mostly from Italian guests. Times are changing and buying power of Italians has declining since world financial collapse. Some fellow villagers has got an idea to rent some rooms for tourists. Inn is popular choice among guests, because is in walking distance of rooms. There is a problem with knowledge of languages, with that in mind owner of inn decided to contact me and explain the problem. There is need to create some sort of Android ap...

Dgroup: DG01152 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01152 Chemical ... DGroup Edetate ... D00052 ... Edetic acid (NF/INN) D00571 ... Edetate calcium disodium... anhydrous (USP) D01802 ... Edetate disodium (USP); Disodium edetate hydrate (JP17) D03943 ... Edetate calcium disodium... (USP); Calcium sodium edetate hydrate (JP17); Sodium calcium edetate (INN) ... D03944 ... Ed...etate dipotassium (USAN) D03945 ... Disodium edetate D03946 ... Edetate sodium (USAN) D03947 ... Edetate trisodium... (USAN) D07934 ... Edetate calcium disodium D07935 ... Dicobalt edetate (INN) Other ... DG01692 ... Chelator ATC code: V03AB03 Antidotes, Chelating agents ...

Rescue of Na+ and H+ binding in Na+,K+-ATPase M8 aspartate mutants by secondary mutation

DEFF Research Database (Denmark)

Holm, Rikke; Einholm, Anja P.; Andersen, Jens Peter

A mutation replacing the aspartate in transmembrane segment M8 in the a3-isoform of Na,K-ATPase with asparagine has been found in patients with rapid-onset dystonia parkinsonism or alternating hemiplegia of childhood. This aspartate may be a critical Na+ coordinating residue, but the crystal......-isoforms of Na,K-ATPase, and much smaller effects were seen for other mutations to the M8 aspartate, which were less disruptive of Na+ binding than mutations to other residues related to Na+ site III. The D928 (rat a1 numbering) mutations strongly diminished the cooperativity of Na+ binding. Moreover the p......H optimum of Na,K-ATPase activity was left-shifted, again with D928N being most disruptive. The reduced affinity for activating Na+ and for inhibitory protons, caused by D928N and D928A mutations, could be rescued by introduction of an additional mutation of a glutamate located far away from D928....

Novel transformation-based response prediction of shear building ...

Indian Academy of Sciences (India)

c Indian Academy of Sciences ... structural response of multi-storey shear buildings subject to earthquake motion. The INN is first ... China has been presented by Xie et al. (2011). ... research works have been done using INN in other fields.

Salinity tolerance in barley (hordeum vulgare l.): effects of varying NaCl, K/sup +/ Na/sup +/ and NaHCO/sub 3/ levels on cultivars differing in tolerance

International Nuclear Information System (INIS)

Mahmood, K.

2011-01-01

Although barley (Hordeum vulgare L.) is regarded as salt tolerant among crop plants, its growth and plant development is severely affected by ionic and osmotic stresses in salt-affected soils. To elucidate the tolerance mechanism, growth and ion uptake of three barley cultivars, differing in salt tolerance, were examined under different levels of NaCl, K/sup +/ Na/sup +/ and NaHCO/sub 3/ in the root medium. The cultivars differed greatly in their responses to varying root medium conditions. Plant growth was more adversely affected by NaHCO/sub 3/ than NaCl. In general, biomass yields were comparable under control and 100 mM NaCl. However, growth of all three cultivars was significantly inhibited by NaHCO/sub 3/ even at low concentration (10 mM). Improved K/sup +/ supply in saline medium increased K/sup +/ uptake and growth of less tolerant cultivars. K/sup +/ uptake was more adversely affected by NaHCO/sub 3/ than NaCl salinity. Selective K/sup +/ uptake and lower Cl/sup -/ in shoots seemed to be associated with the growth responses. K application would help better growth of these cultivars on K-deficient saline-sodic soils and under irrigation with poor quality water having high Residual Sodium Carbonate (RSC) and/or Sodium Adsorption Ratio (SAR). (author)

Glutathionylation-Dependence of Na+-K+-Pump Currents Can Mimic Reduced Subsarcolemmal Na+ Diffusion

OpenAIRE

Garcia, Alvaro; Liu, Chia-Chi; Cornelius, Flemming; Clarke, Ronald?J.; Rasmussen, Helge?H.

2016-01-01

The existence of a subsarcolemmal space with restricted diffusion for Na+ in cardiac myocytes has been inferred from a transient peak electrogenic Na+-K+ pump current beyond steady state on reexposure of myocytes to K+ after a period of exposure to K+-free extracellular solution. The transient peak current is attributed to enhanced electrogenic pumping of Na+ that accumulated in the diffusion-restricted space during pump inhibition in K+-free extracellular solution. However, there are no know...

Myocardial Na,K-ATPase: Clinical aspects

OpenAIRE

Kjeldsen, Keld

2003-01-01

The specific binding of digitalis glycosides to Na,K-ATPase is used as a tool for Na,K-ATPase quantification with high accuracy and precision. In myocardial biopsies from patients with heart failure, total Na,K-ATPase concentration is decreased by around 40%; a correlation exists between a decrease in heart function and a decrease in Na,K-ATPase concentration. During digitalization, around 30% of remaining pumps are occupied by digoxin. Myocardial Na,K-ATPase is also influenced by other drugs...

Down-Regulation of the Na+-Coupled Phosphate Transporter NaPi-IIa by AMP-Activated Protein Kinase

Directory of Open Access Journals (Sweden)

Miribane Dërmaku-Sopjani

2013-11-01

Full Text Available Background/Aims: The Na+-coupled phosphate transporter NaPi-IIa is the main carrier accomplishing renal tubular phosphate reabsorption. It is driven by the electrochemical Na+ gradient across the apical cell membrane, which is maintained by Na+ extrusion across the basolateral cell membrane through the Na+/K+ ATPase. The operation of NaPi-IIa thus requires energy in order to avoid cellular Na+ accumulation and K+ loss with eventual decrease of cell membrane potential, Cl- entry and cell swelling. Upon energy depletion, early inhibition of Na+-coupled transport processes may delay cell swelling and thus foster cell survival. Energy depletion is sensed by the AMP-activated protein kinase (AMPK, a serine/threonine kinase stimulating several cellular mechanisms increasing energy production and limiting energy utilization. The present study explored whether AMPK influences the activity of NAPi-IIa. Methods: cRNA encoding NAPi-IIa was injected into Xenopus oocytes with or without additional expression of wild-type AMPK (AMPKα1-HA+AMPKβ1-Flag+AMPKγ1-HA, of inactive AMPKαK45R (AMPKα1K45R+AMPKβ1-Flag+AMPKγ1-HA or of constitutively active AMPKγR70Q (AMPKα1-HA+AMPKβ1-Flag+AMPKγ1R70Q. NaPi-IIa activity was estimated from phosphate-induced current in dual electrode voltage clamp experiments. Results: In NaPi-IIa-expressing, but not in water-injected Xenopus oocytes, the addition of phosphate (1 mM to the extracellular bath solution generated a current (Ip, which was significantly decreased by coexpression of wild-type AMPK and of AMPKγR70Q but not of AMPKαK45R. The phosphate-induced current in NaPi-IIa- and AMPK-expressing Xenopus ooocytes was significantly increased by AMPK inhibitor Compound C (20 µM. Kinetic analysis revealed that AMPK significantly decreased the maximal transport rate. Conclusion: The AMP-activated protein kinase AMPK is a powerful regulator of NaPi-IIa and thus of renal tubular phosphate transport.

Thermodynamic study of NaFe complex oxides. High temperature properties of Na sub 5 FeO sub 4 and Na sub 3 FeO sub 3

CERN Document Server

Furukawa, T

2002-01-01

In order to contribute the investigation into corrosion mechanism of the structural materials by leakage sodium, thermodynamic study of Na-Fe complex oxides formed by the reactions was carried out. Na sub 5 FeO sub 4 and Na sub 3 FeO sub 3 were used as the sample. Its high temperature properties (i.e. melting, solidification and transformation) were observed by Differential Scanning Calorimetry, DSC. Moreover, the original test named 'melting point confirmation test' was performed for the observation of traces of melting and solidification after the tests. Following contents have been obtained by this study. (1) Na sub 5 FeO sub 4 was stably as the solid without phase transformation and melting until 800degC. However, the compound was showing a tendency to change into Na sub 4 FeO sub 3 with temperature increasing under the low oxygen potential. (2) The stability of Na sub 3 FeO sub 3 is the same as that of Na sub 5 FeO sub 4 until 700degC. Over the temperature, the compound was changed differential compound ...

The Place Where Hope Lives

Science.gov (United States)

... Inn at NIH comforts kids and their families. Children need the comfort and security of their families—especially when they are being treated for a life-threatening illness far from home. The Children's Inn is a private, non-profit, family-centered ...

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

2007-01-01

Holiday Inn Chang An West Beijing On March 28,Conformity Assessment Services Co.under China Certification and Inspection Group held a grand ceremony to award certificates to Holiday Inn Chang An West Beijing,which has successfully passed the four managem

Metallic Na formation in NaCl crystals with irradiation of electron or vacuum ultraviolet photon

Energy Technology Data Exchange (ETDEWEB)

Owaki, Shigehiro [Osaka Prefecture Univ., Sakai, Osaka (Japan). Coll. of Integrated Arts and Sciences; Koyama, Shigeko; Takahashi, Masao; Kamada, Masao; Suzuki, Ryouichi

1997-03-01

Metallic Na was formed in NaCl single crystals with irradiation of a variety of radiation sources and analyzed the physical states with several methods. In the case of irradiation of 21 MeV electron pulses to the crystal blocks, the optical absorption and lifetime measurement of positron annihilation indicated appearance of Na clusters inside. Radiation effects of electron beam of 30 keV to the crystals in vacuum showed the appearance of not only metallic Na but atomic one during irradiation with Auger electron spectroscopy. Intense photon fluxes in vacuum ultraviolet region of synchrotron radiation were used as another source and an analyzing method of ultraviolet photoelectron spectroscopy. The results showed the metallic Na layered so thick that bulk plasmon can exist. (author)

Scintillation efficiency measurement of Na recoils in NaI(Tl) below the DAMA/LIBRA energy threshold

Energy Technology Data Exchange (ETDEWEB)

Xu, Jingke; Shields, Emily; Calaprice, Frank; Westerdale, Shawn; Froborg, Francis; Suerfu, Burkhant; Alexander, Thomas; Aprahamian, Ani; Back, Henning O.; Casarella, Clark; Fang, Xiao; Gupta, Yogesh K.; Ianni, Aldo; Lamere, Edward; Lippincott, W. Hugh; Liu, Qian; Lyons, Stephanie; Siegl, Kevin; Smith, Mallory; Tan, Wanpeng; Kolk, Bryant Vande

2015-07-01

The dark matter interpretation of the DAMA modulation signal depends on the NaI(Tl) scintillation efficiency of nuclear recoils. Previous measurements for Na recoils have large discrepancies, especially in the DAMA/LIBRA modulation energy region. We report a quenching effect measurement of Na recoils in NaI(Tl) from 3 to 52 keVnr, covering the whole DAMA/LIBRA energy region for dark matter-Na scattering interpretations. By using a low-energy, pulsed neutron beam, a double time-of-flight technique, and pulse-shape discrimination methods, we obtained the most accurate measurement of this kind for NaI(Tl) to date. The results differ significantly from the DAMA reported values at low energies but fall between the other previous measurements. We present the implications of the new quenching results for the dark matter interpretation of the DAMA modulation signal.

Synthesis of Ag or Pt Nanoparticles by Hydrolysis of Either Ag2Na or PtNa

Directory of Open Access Journals (Sweden)

Huabin Wang

2008-01-01

Full Text Available Ag and Pt nanoparticles have successfully been synthesized by hydrolysis of either Ag2Na or PtNa at room temperature. The oxidation of sodium in the Pt-Na pellets was much faster than that in the Ag-Na pellets since Pt is a catalyst for H2O formation reaction from hydrogen and oxygen at room temperature. The hydrolysis byproduct, NaOH, has a high solubility and easily is removed. This method offers a simple method of preparing transition metal nanoparticles. The Ag and Pt nanoparticles prepared by this method were crystalline in nature, and spherical in shape with a mean size of around 10 nm.

Dynamic polarizabilities and Van der Waals coefficients for alkali atoms Li, Na and alkali dimer molecules Li2, Na2 and NaLi

Science.gov (United States)

Mérawa, M.; Dargelos, A.

1998-07-01

The present paper gives an account of investigations of the polarizability of the alkali atoms Li, Na, diatomics homonuclear and heteronuclear Li2, Na2 and NaLi at SCF (Self Consistent Field) level of approximation and at correlated level, using a time Time-Dependent Gauge Invariant method (TDGI). Our static polarizability values agree with the best experimental and theoretical determinations. The Van der Waals C6 coefficients for the atom-atom, atom-dimer and dimer-dimer interactions have been evaluated. Les polarisabilités des atomes alcalins Li, Na, et des molécules diatomiques homonucléaires et hétéronucléaire Li2, Na2 et NaLi, ont été calculées au niveau SCF (Self Consistent Field) et au niveau corrélé à partir d'une méthode invariante de jauge dépendante du temps(TDGI). Nos valeurs des polarisabilités statiques sont en accord avec les meilleurs déterminations expérimentales et théoriques. Les coefficients C6 de Van de Waals pour les interactions atome-atome, atome-dimère et dimère-dimère ont également été évalués.

Structure-function relationships of Na+, K+, ATP, or Mg2+ binding and energy transduction in Na,K-ATPase

DEFF Research Database (Denmark)

Jorgensen, Peter L.; Pedersen, Per Amstrup

2000-01-01

Na,K-ATPase; Mutagenesis; Na+ binding; K+ binding; Tl+ binding; Mg2+ binding; ATP binding; Cation binding site; Energy transduction......Na,K-ATPase; Mutagenesis; Na+ binding; K+ binding; Tl+ binding; Mg2+ binding; ATP binding; Cation binding site; Energy transduction...

At NA2

CERN Multimedia

1977-01-01

One of the NA2 calorimeter sections is moved in. The NA2 calorimeter was divided in two halves, to the left and the right of the beam, each half consisting of sheets of passive high Z material interleaved with blades of plastic scintillators. The photo shows on the right, the upstream 'electron' module with eleven lead plates for a total radiation length of 20.

Dgroup: DG01455 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ... D05206 ... Norepinephrine bitartr...USP); Isoprenaline sulfate (JAN) ... D02150 ... l-Isoprenaline hydrochloride (JP17) ... DG00212 ... Norepinephrine ... D00076 ... Noradrenaline...DG00212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ...

En ny flugt ind i skoven

DEFF Research Database (Denmark)

Haarder, Jon Helt

2008-01-01

Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner......Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner...

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing

2015-11-21

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

2015-01-01

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

Na+-K+ pump in chronic renal failure

International Nuclear Information System (INIS)

Deepak, K.; Kahn, T.

1987-01-01

This review summarizes the evidence for the defect in Na + -K + pump in chronic renal failure, considers the role of various factors in causing this defect, and discusses the clinical implications thereof. Intracellular Na is elevated in erythrocytes, leukocytes, and muscle cells from some patients with chronic renal failure (CRF). Recent evidence suggest that this elevation of cell Na may be, in large part, a consequence of decreased number of Na + -K + pump units per cell. Maintenance dialysis over a period of weeks ameliorates the defect in intracellular Na + , and this improvement is contemporaneous with an increase in the number of Na + -K + pump sites per cell. In erythrocytes with normal cell Na + , acute hemodialysis increases the rate of 22 Na + and 42 K + transport. Many factors such as the presence of retained toxic metabolite or circulating inhibitor in the uremic plasma, or biochemical changes produced by acute hemodialysis, may explain this finding. In cells with high cell Na + , the pump-mediated 42 K + transport is normalized at the expense of a raised cell Na + . The decreased muscle membrane potential in uremic subjects has been attributed to a decreased activity of Na + -K + pump. The authors discuss the role of hormonal abnormalities and circulating inhibitors, which may cause an acute inhibition of the pump and of other factors such as K + depletion, which may cause more chronic alterations. The implications of alteration of Na + and K + pump transport and raised cell Na + on other non-pump-mediated transport pathways are discussed. Raised cell Na + may be a marker for the adequacy of maintenance dialysis in patients with end-stage renal failure

Pozitivni in negativni vplivi risank na otroke

OpenAIRE

Povše, Nika

2017-01-01

V tej diplomski nalogi smo raziskovali pozitivne in negativne vplive risank na otroke. Začeli smo z zgodovino televizije, tako svetovno zgodovino kot zgodovino televizije na Slovenskem. Na isti način smo pregledali tudi zgodovino risank. Raziskovali smo otrokov razvoj, predvsem tiste vidike, ki so izpostavljeni vplivom risank, kot so morala, jezik, domišljija in učenje. Sledilo je raziskovanje negativnih in pozitivnih vplivov, ki jih imajo risanke na otroke, kar je tudi naš glavni problem te ...

Vpliv konfucija na sodobno izobraževanje na Kitajskem

Directory of Open Access Journals (Sweden)

Katja Skitek

2009-12-01

Full Text Available Izobraževanje na Kitajskem je bilo vedno trdno povezano s Konfucijem in konfucianizmom, kar pa ni čudno, saj je bil Konfucij prvi, ki je poudarjal moč z nanja in izobraževanja. LR Kitajska je v zadnjih petdesetih letih počasi in postopoma začela uveljavljati določene spremembe v vzgojno-izobraževalni sistem. Kakšne so te spremembe in koliko nanje še vedno vpliva konfucianizem, bo osrednja tema pričujočega članka. Konfucianizem danes na Kitajskem ni preveč popularen, izobraženci pa so se razporedili v dve skupini: eni trdijo, da je njegov vpliv še vedno velik, drugi pa zatrjujejo, da nima več nobenega vpliva na sodobno življenje. Katera stran ima prav? Konfucij je v prvi vrsti poudarjal pomembnost moralnih vrednot vsakega človeka in prav moralne vrednote, za katere se je zavzemal, so še danes trdno zasidrane v kitajski kulturi. Ali je torej sploh mogoče popolnoma izriniti Konfucija iz sodobnega izobraževanja?

Low-spin states of 23Na

International Nuclear Information System (INIS)

Bakkum, E.L.

1987-01-01

A study of 23 Na via the 22 Ne(p,γ) 23 Na and 23 Na(γ,γ) 23 Na reactions is presented. Only a limited number of resonances has been studied, selected on the basis of strong excitation of the lowest levels of which the spin was unknown. As a result the spins are now known of all levels of 23 Na with excitation energies up to 7 MeV, except for a few high-spin states which are too weakly excited in the decay of the known 22 Ne(p,γ) resonances. The mean lifetimes of the 23 Na levels at 4.43 and 7.89 MeV were found to be 350±70 and 220±17 attoseconds (1 attosecond = 10 -18 seconds) respectively. 97 refs.; 22 figs.; 12 tabs

Response of saliva Na/K ratio to changing Na supply of lactating cows under tropical conditions

NARCIS (Netherlands)

Thiangtum, Wandee; Schonewille, J Thomas; Verstegen, Martin Wa; Arsawakulsudhi, Supot; Rukkwamsuk, Theera; Hendriks, Wouter H

BACKGROUND: Factorial determination of the sodium (Na) requirement of heat-stressed lactating cows is hindered by accurate estimates of the Na losses through sweat. Direct studies, therefore, may be needed requiring information on the time course of healthy animals to become Na depleted and the

Response of saliva Na/K ratio to changing Na supply of lactating cows under tropical conditions

NARCIS (Netherlands)

Thiangtum, Wandee; Schonewille, Thomas J.; Verstegen, Martin W.A.; Arsawakulsudhi, Supot; Rukkwamsuk, Theera; Hendriks, Wouter H.

2017-01-01

BACKGROUND: Factorial determination of the sodium (Na) requirement of heat-stressed lactating cows is hindered by accurate estimates of the Na losses through sweat. Direct studies, therefore, may be needed requiring information on the time course of healthy animals to become Na depleted and the

Clues to NaCN formation

Science.gov (United States)

Quintana-Lacaci, G.; Cernicharo, J.; Velilla Prieto, L.; Agúndez, M.; Castro-Carrizo, A.; Fonfría, J. P.; Massalkhi, S.; Pardo, J. R.

2017-11-01

Context. ALMA is providing us essential information on where certain molecules form. Observing where these molecules emission arises from, the physical conditions of the gas, and how this relates with the presence of other species allows us to understand the formation of many species, and to significantly improve our knowledge of the chemistry that occurs in the space. Aims: We studied the molecular distribution of NaCN around IRC +10216, a molecule detected previously, but whose origin is not clear. High angular resolution maps allow us to model the abundance distribution of this molecule and check suggested formation paths. Methods: We modeled the emission of NaCN assuming local thermal equilibrium (LTE) conditions. These profiles were fitted to azimuthal averaged intensity profiles to obtain an abundance distribution of NaCN. Results: We found that the presence of NaCN seems compatible with the presence of CN, probably as a result of the photodissociation of HCN, in the inner layers of the ejecta of IRC +10216. However, similar as for CH3CN, current photochemical models fail to reproduce this CN reservoir. We also found that the abundance peak of NaCN appears at a radius of 3 × 1015 cm, approximately where the abundance of NaCl, suggested to be the parent species, starts to decay. However, the abundance ratio shows that the NaCl abundance is lower than that obtained for NaCN. We expect that the LTE assumption might result in NaCN abundances higher than the real ones. Updated photochemical models, collisional rates, and reaction rates are essential to determine the possible paths of the NaCN formation. Based on observations carried out with ALMA and the IRAM 30 m Telescope. ALMA is a partnership of ESO (representing its member states), NSF (USA) and NINS (Japan), together with NRC (Canada) and NSC and ASIAA (Taiwan), in cooperation with the Republic of Chile. The Joint ALMA Observatory is operated by ESO, AUI/NRAO and NAOJ. IRAM is supported by INSU/CNRS (France

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

The Holiday Inn Beijing Focus Square Holiday Inn Beijing Focus Square is the newest and tallest international mid-scale hotel at Wangjing’s famous business hub which is within walking distance of many multinational companies and surrounded by a variety of dining and shopping outlets.

The effect of Na+ and K+ on the thermal denaturation of Na+ and + K+-dependent ATPase.

Science.gov (United States)

Fischer, T H

1983-01-01

To increase our understanding of the physical nature of the Na+ and K+ forms of the Na+ + K+-dependent ATPase, thermal-denaturation studies were conducted in different types of ionic media. Thermal-denaturation measurements were performed by measuring the regeneration of ATPase activity after slow pulse exposure to elevated temperatures. Two types of experiments were performed. First, the dependence of the thermal-denaturation rate on Na+ and K+ concentrations was examined. It was found that both cations stabilized the pump protein. Also, K+ was a more effective stabilizer of the native state than was Na+. Secondly, a set of thermodynamic parameters was obtained by measuring the temperature-dependence of the thermal-denaturation rate under three ionic conditions: 60 mM-K+, 150 mM-Na+ and no Na+ or K+. It was found that ion-mediated stabilization of the pump protein was accompanied by substantial increases in activation enthalpy and entropy, the net effect being a less-pronounced increase in activation free energy. PMID:6309139

VIKOR Method for Interval Neutrosophic Multiple Attribute Group Decision-Making

Directory of Open Access Journals (Sweden)

Yu-Han Huang

2017-11-01

Full Text Available In this paper, we will extend the VIKOR (VIsekriterijumska optimizacija i KOmpromisno Resenje method to multiple attribute group decision-making (MAGDM with interval neutrosophic numbers (INNs. Firstly, the basic concepts of INNs are briefly presented. The method first aggregates all individual decision-makers’ assessment information based on an interval neutrosophic weighted averaging (INWA operator, and then employs the extended classical VIKOR method to solve MAGDM problems with INNs. The validity and stability of this method are verified by example analysis and sensitivity analysis, and its superiority is illustrated by a comparison with the existing methods.

Financiranje projekata na pomorskom dobru

Directory of Open Access Journals (Sweden)

Zoran Tasić

2018-02-01

Full Text Available Koncesije otvaraju vrlo osjetljiva politička, ekonomska i pravna pitanja u mnogim državama svijeta. Samo definiranje pojma koncesije često je komplicirana i ne sasvim jasna zadaća. OECD je prihvatila definiciju koncesije kao: ’’davanje prava privatnom trgovačkom društvu da može gospodarski upravljati određenom infrastrukturnim uslugama i za to zarađivati naknadu. Koncesionar dobija u posjed određene objekte (ali vlasništvo na tim objektima ostaje u rukama države te ih koristi u svrhu obavljanja određene djelatnosti ili usluge sukladno odredbama ugovora’’. Hrvatsko pravo definira koncesije načelno kao pravo stečeno temeljem ugovora o koncesiji, a sukladno uvjetima sadržanim u odluci o davanju koncesije (koju je donijelo odgovarajuće upravno tijelo, a u odnosu na pomorsko dobro, specifično, kao pravo državne vlasti da može dio pomorskog dobra, koje je inače dobro izvan pravnog prometa (res extra commercium, isključiti iz opće uporabe bilo dijelom ili u cijelosti, i dati ga fizičkoj ili pravnoj osobi na gospodarsko korištenje sukladno određenim prostornim planovima. Građevine i drugi objekti izgrađeni na pomorskom dobru čine njegov sastavni dio. Zakonom je jasno određeno da nikakva stvarna prava nisu dopuštena na pomorskom dobru, uključivo i na objektima izgrađenima na njemu. Projekti na pomorskom dobru često uključuju velike infrastrukturne projekte, razvoje luka i marina, koji iziskuju značajna financijska sredstva. Banke koje financiraju takve projekte zahtijevaju organiziran i transparentan zakonski okvir koncesija, slobodu ugovaranja, pravnu zaštitu svih strana uključenih u projekt (uključivo i mogućnost međunarodne arbitraže. (...

Controlled phase stability of highly Na-active triclinic structure in nanoscale high-voltage Na2-2xCo1+xP2O7 cathode for Na-ion batteries

Science.gov (United States)

Song, Hee Jo; Kim, Jae-Chan; Dar, Mushtaq Ahmad; Kim, Dong-Wan

2018-02-01

With the increasing demand for high energy density in energy-storage systems, a high-voltage cathode is essential in rechargeable Li-ion and Na-ion batteries. The operating voltage of a triclinic-polymorph Na2CoP2O7, also known as the rose form, is above 4.0 V (vs. Na/Na+), which is relatively high compared to that of other cathode materials. Thus, it can be employed as a potential high-voltage cathode material in Na-ion batteries. However, it is difficult to synthesize a pure rose phase because of its low phase stability, thus limiting its use in high-voltage applications. Herein, compositional-engineered, rose-phase Na2-2xCo1+xP2O7/C (x = 0, 0.1 and 0.2) nanopowder are prepared using a wet-chemical method. The Na2-2xCo1+xP2O7/C cathode shows high electrochemical reactivity with Na ions at 4.0 V, delivering high capacity and high energy density.

Optimization of NaOH Molarity, LUSI Mud/Alkaline Activator, and Na2SiO3/NaOH Ratio to Produce Lightweight Aggregate-Based Geopolymer

Directory of Open Access Journals (Sweden)

Rafiza Abdul Razak

2015-05-01

Full Text Available This paper presents the mechanical function and characterization of an artificial lightweight geopolymer aggregate (ALGA using LUSI (Sidoarjo mud and alkaline activator as source materials. LUSI stands for LU-Lumpur and SI-Sidoarjo, meaning mud from Sidoarjo which erupted near the Banjarpanji-1 exploration well in Sidoarjo, East Java, Indonesia on 27 May 2006. The effect of NaOH molarity, LUSI mud/Alkaline activator (LM/AA ratio, and Na2SiO3/NaOH ratio to the ALGA are investigated at a sintering temperature of 950 °C. The results show that the optimum NaOH molarity found in this study is 12 M due to the highest strength (lowest AIV value of 15.79% with lower water absorption and specific gravity. The optimum LUSI mud/Alkaline activator (LM/AA ratio of 1.7 and the Na2SiO3/NaOH ratio of 0.4 gives the highest strength with AIV value of 15.42% with specific gravity of 1.10 g/cm3 and water absorption of 4.7%. The major synthesized crystalline phases were identified as sodalite, quartz and albite. Scanning Electron Microscope (SEM image showed more complete geopolymer matrix which contributes to highest strength of ALGA produced.

Optimization of NaOH Molarity, LUSI Mud/Alkaline Activator, and Na2SiO3/NaOH Ratio to Produce Lightweight Aggregate-Based Geopolymer

Science.gov (United States)

Abdul Razak, Rafiza; Abdullah, Mohd Mustafa Al Bakri; Hussin, Kamarudin; Ismail, Khairul Nizar; Hardjito, Djwantoro; Yahya, Zarina

2015-01-01

This paper presents the mechanical function and characterization of an artificial lightweight geopolymer aggregate (ALGA) using LUSI (Sidoarjo mud) and alkaline activator as source materials. LUSI stands for LU-Lumpur and SI-Sidoarjo, meaning mud from Sidoarjo which erupted near the Banjarpanji-1 exploration well in Sidoarjo, East Java, Indonesia on 27 May 2006. The effect of NaOH molarity, LUSI mud/Alkaline activator (LM/AA) ratio, and Na2SiO3/NaOH ratio to the ALGA are investigated at a sintering temperature of 950 °C. The results show that the optimum NaOH molarity found in this study is 12 M due to the highest strength (lowest AIV value) of 15.79% with lower water absorption and specific gravity. The optimum LUSI mud/Alkaline activator (LM/AA) ratio of 1.7 and the Na2SiO3/NaOH ratio of 0.4 gives the highest strength with AIV value of 15.42% with specific gravity of 1.10 g/cm3 and water absorption of 4.7%. The major synthesized crystalline phases were identified as sodalite, quartz and albite. Scanning Electron Microscope (SEM) image showed more complete geopolymer matrix which contributes to highest strength of ALGA produced. PMID:26006238

UTJECAJ POZITIVNE DISKRIMINACIJE NA UKLJUČIVANJE ŽENA NA TRŽIŠTE RADA U REPUBLICI HRVATSKOJ

OpenAIRE

Dovranić, Dora; Katavić, Ivica

2016-01-01

U početku 21. stoljeća često se koristi pojam pozitivne (afirmativne) diskriminacije. Pozitivna diskriminacija mjera je koju poduzima vlada, neka organizacija ili korporacija s ciljem da se smanje nejednakosti u društvu nastale upravo diskriminacijom, na način da se pružaju određene povlastice onima koji su pretrpjeli neku vrstu diskriminacije. Nastala je u Sjedinjenim Američkim Državama na inicijativu predsjednika Kennedyja, Johnsona i Nixona. Diskriminacija, nažalost, ima mnogo oblika, a ne...

Reaction of metal oxides with molten mixtures NaPO3+NaCl

International Nuclear Information System (INIS)

Kovarskaya, E.N.; Mityakhina, V.S.; Rodionov, Yu.I.; Silin, M.Yu.

1988-01-01

By methods of solubility determination and paper chromatography it is shown, that Fe 2 O 3 solution in NaPO 3 +NaCl melts in the air relizes due to its chemical interaction with solvent resulting in formation of iron and sodium binary di- and monophosphates depending on melt-solvent initial composition, its attainment of equilibrium state and experiment temperature. It is established, that oxides increased solubility in melts with NaCl initial content ∼30 mol.% is specified by sodium tri- and tricyclophosphates presence in the melts. On this basis of NGR-spectroscopy data the presence of iron, europium, tin and sodium binary di- and monophosphates in some chloride-polyphosphate melts is confirmed

Crystal structure of polyphosphates NaCd(PO3)3 and NaMn(PO3)3

International Nuclear Information System (INIS)

Murashova, E.V.; Chudinova, N.N.

1997-01-01

Crystal structure of NaCd(PO 3 ) 3 (1) and NaMn(PO 3 ) 3 (2) isostructural polyphosphates was determined for twin samples. Rhombic lattice parameters of (1): a = 14.678, b = 14.669, c = 14.705 A, sp. gr. P2 1 2 1 2 1 , Z = 16. The structure of compounds is of frame type. Polyphosphate chain with repetition period of 24 PO 4 tetrahedrons contacts with NaO 6 and M 2 O 6 octahedrons by means of common oxygen vertices. Similarities and differences in structure of mentioned polyphosphates and earlier analyzed NaMg(PO 3 ) 3 polyphosphate are noted [ru

Effect of growth in lithium on ouabain binding, Na-K-ATPase and Na and K transport in hela cells.

Science.gov (United States)

Boardman, L J; Hume, S P; Lamb, J F; Polson, J

1975-01-01

1. HeLa cells were grown for 24 hr in growth medium in which part of the Na was replaced with Li. Ion contents, cell volumes and numbers, Na-K-ATPase and specific ouabain binding were measured. In some experiments the Na efflux and net Na transport was also measured. 2. Growth in Li caused a rise in the specific ouabain binding and membrane Na-K-ATPase of these cells. The Li concentrations in the cells necessary to produce this effect ranged up to 50 mM. 3. It is suggested that Li, like Na, acts on the genetic material of the cells to cause the production of more Na pumps within the membrane. PMID:124350

Effects of EDTA-Na (Na ethylenediaminetetraacetate) upon the metabolism of radiostrontium and radioyttrium in mice

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, T; Wakisaka, G; Kono, T; Hiroaki, A; Yamamasu, T; Sugawa, I

1954-01-01

The toxicity of EDTA-Na, inert Sr (NO/sub 3/)/sub 2/ and Ba (NO/sub 3/)/sub 2/ has been examined. Simultaneous injection of EDTA-Na showed no significant effect upon the distribution of radio-Sr in the bones of mice. The distribution of radio-Y in the bones of mice tended to decrease following the simultaneous subcutaneous injection of /sup 91/Y and EDTA-Na.

Lodging in Boulder and Louisville, Colorado | NREL

Science.gov (United States)

Leadership Community Education Center Economic Impact Environment, Health, & Safety Sustainability Energy : 720-587-3014 Comfort Inn 1196 W. Dillon Road Louisville, CO 80027 Phone: 303-604-0181 Courtyard by Marriott 948 West Dillon Road Louisville, CO 303-604-0007 Hampton Inn 912 W. Dillon Road Louisville, CO

Something of Value: How Franchise Sellers Make Training Pay

Science.gov (United States)

Berger, Gladys

1975-01-01

Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

Novel aspects of Na+,K+-ATPase

OpenAIRE

Aizman, Oleg

2002-01-01

Na,K-ATPase, an integral membrane protein expressed in each eukaryotic cell, serves as the major determinant of intracellular ion composition. In the current study we investigated novel aspects of Na,K-ATPase function and regulation. It is well established that Na,K-ATPase activity is regulated by reversible phosphorylation. New findings in this study are: 1) the level of intracellular Ca 2. concentration determines the functional effects of PKA and PKC-mediated Na,K-ATP...

High-Performance Na-O2 Batteries Enabled by Oriented NaO2 Nanowires as Discharge Products.

Science.gov (United States)

Khajehbashi, S Mohammad B; Xu, Lin; Zhang, Guobin; Tan, Shuangshuang; Zhao, Yan; Wang, Lai-Sen; Li, Jiantao; Luo, Wen; Peng, Dong-Liang; Mai, Liqiang

2018-06-13

Na-O 2 batteries are emerging rechargeable batteries due to their high theoretical energy density and abundant resources, but they suffer from sluggish kinetics due to the formation of large-size discharge products with cubic or irregular particle shapes. Here, we report the unique growth of discharge products of NaO 2 nanowires inside Na-O 2 batteries that significantly boosts the performance of Na-O 2 batteries. For this purpose, a high-spin Co 3 O 4 electrocatalyst was synthesized via the high-temperature oxidation of pure cobalt nanoparticles in an external magnetic field. The discharge products of NaO 2 nanowires are 10-20 nm in diameter and ∼10 μm in length, characteristics that provide facile pathways for electron and ion transfer. With these nanowires, Na-O 2 batteries have surpassed 400 cycles with a fixed capacity of 1000 mA h g -1 , an ultra-low over-potential of ∼60 mV during charging, and near-zero over-potential during discharging. This strategy not only provides a unique way to control the morphology of discharge products to achieve high-performance Na-O 2 batteries but also opens up the opportunity to explore growing nanowires in novel conditions.

Measurement of cross sections of threshold detectors with spectrum average technique

International Nuclear Information System (INIS)

Agus, Y.; Celenk, I.; Oezmen, A.

2004-01-01

Cross sections of the reactions 103 Rh(n, n') 103m Rh, 115 In(n, n') 115m In, 232 Th(n, f), 47 Ti(n, p) 47 Sc, 64 Zn(n, p) 64 Cu, 58 Ni(n, p) 58 Co, 54 Fe(n, p) 54 Mn, 46 Ti(n, p) 46 Sc, 27 Al(n, p) 27 Mg, 56 Fe(n, p) 56 Mn, 24 Mg(n, p) 24 Na, 59 Co(n, α) 56 Mn, 27 Al(n, α) 24 Na and 48 Ti(n, p) 48 Sc were measured with average neutron energies above effective threshold by using the activation method through usage of spectrum average technique in an irradiation system where there are three equivalent Am/Be sources, each of which has 592 GBq activity. The cross sections were determined with reference to the fast neutron fission cross section of 238 U. The measured values and published values are generally in agreement. (orig.)

Insight to the Thermal Decomposition and Hydrogen Desorption Behaviors of NaNH2-NaBH4 Hydrogen Storage Composite.

Science.gov (United States)

Pei, Ziwei; Bai, Ying; Wang, Yue; Wu, Feng; Wu, Chuan

2017-09-20

The lightweight compound material NaNH 2 -NaBH 4 is regarded as a promising hydrogen storage composite due to the high hydrogen density. Mechanical ball milling was employed to synthesize the composite NaNH 2 -NaBH 4 (2/1 molar ratio), and the samples were investigated utilizing thermogravimetric-differential thermal analysis-mass spectroscopy (TG-DTA-MS), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR) analyses. The full-spectrum test (range of the ratio of mass to charge: 0-200) shows that the released gaseous species contain H 2 , NH 3 , B 2 H 6 , and N 2 in the heating process from room temperature to 400 °C, and possibly the impurity gas B 6 H 12 also exists. The TG/DTA analyses show that the composite NaNH 2 -NaBH 4 (2/1 molar ratio) is conductive to generate hydrogen so that the dehydrogenation process can be finished before 400 °C. Moreover, the thermal decomposition process from 200 to 400 °C involves two-step dehydrogenation reactions: (1) Na 3 (NH 2 ) 2 BH 4 hydride decomposes into Na 3 BN 2 and H 2 (200-350 °C); (2) remaining Na 3 (NH 2 ) 2 BH 4 reacts with NaBH 4 and Na 3 BN 2 , generating Na, BN, NH 3 , N 2 , and H 2 (350-400 °C). The better mechanism understanding of the thermal decomposition pathway lays a foundation for tailoring the hydrogen storage performance of the composite complex hydrides system.

Distinct pH dependencies of Na+/K+ selectivity at the two faces of Na,K-ATPase.

Science.gov (United States)

Cornelius, Flemming; Tsunekawa, Naoki; Toyoshima, Chikashi

2018-02-09

The sodium pump (Na,K-ATPase) in animal cells is vital for actively maintaining ATP hydrolysis-powered Na + and K + electrochemical gradients across the cell membrane. These ion gradients drive co- and countertransport and are critical for establishing the membrane potential. It has been an enigma how Na,K-ATPase discriminates between Na + and K + , despite the pumped ion on each side being at a lower concentration than the other ion. Recent crystal structures of analogs of the intermediate conformations E2·Pi·2K + and Na + -bound E1∼P·ADP suggest that the dimensions of the respective binding sites in Na,K-ATPase are crucial in determining its selectivity. Here, we found that the selectivity at each membrane face is pH-dependent and that this dependence is unique for each face. Most notable was a strong increase in the specific affinity for K + at the extracellular face ( i.e. E2 conformation) as the pH is lowered from 7.5 to 5. We also observed a smaller increase in affinity for K + on the cytoplasmic side (E1 conformation), which reduced the selectivity for Na + Theoretical analysis of the p K a values of ion-coordinating acidic amino acid residues suggested that the face-specific pH dependences and Na + /K + selectivities may arise from the protonation or ionization of key residues. The increase in K + selectivity at low pH on the cytoplasmic face, for instance, appeared to be associated with Asp 808 protonation. We conclude that changes in the ionization state of coordinating residues in Na,K-ATPase could contribute to altering face-specific ion selectivity. © 2018 by The American Society for Biochemistry and Molecular Biology, Inc.

OGLAŠEVANJE NA FACEBOOKU

OpenAIRE

Renko, Katica

2013-01-01

V magistrskem delu smo se seznanili z oglaševanjem na Facebooku. S pregledom gradiva, ki nam je ponujeno, smo preverili pogoje, načine, oblike … oglaševanja, ki pa smo jih s pregledom situacije v praksi preverili in dopolnili. Ob zaključku dela lahko rečemo, da je oglaševanje preko FB enostavnejše, cenejše, dostopnejše, omogoča nam ažurnost in samo komunikacijo z naslovniki, ki so potencialni kupci naših ponudb. Množični mediji nam omogočajo mnogotero obliko oglaševanja. Izbrana oblika ponuja...

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

International Nuclear Information System (INIS)

Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

2012-01-01

Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

Laser-induced ionization of Na vapor

International Nuclear Information System (INIS)

Wu, R.C.Y.; Judge, D.L.; Roussel, F.; Carre, B.; Breger, P.; Spiess, G.

1982-01-01

The production of Na 2 + ions by off-resonant laser excitation in the 5800-6200A region mainly results from two-photon absorption by the Na 2 molecule to highly excited gerade states followed by (a) direct ionization by absorbing a third photon or (b) coupling to the molecular Na 2 D 1 PIμ Rydberg state which is subsequently ionized by absorbing a third photon. This mechanism, i.e., a two-photon resonance three photon ionization process, explains a recent experimental observation of Roussel et al. It is suggested that the very same mechanism is also responsible for a similar observation reported by Polak-Dingels et al in their work using two crossed Na beams. In the latter two studies the laser-induced associative ionization processes were reported to be responsible for producing the Na 2 + ion. From the ratio of molecular to atomic concentration in the crossed beam experiment of Polak-Dingels et al we estimate that the cross section for producing Na 2 + through laser-induced associative ionization is at least four orders of magnitude smaller than ionization through the two-photon resonance three photon ionization process in Na 2 molecules

Characterization and antibacterial activity of silver exchanged regenerated NaY zeolite from surfactant-modified NaY zeolite

Energy Technology Data Exchange (ETDEWEB)

Salim, Mashitah Mad; Malek, Nik Ahmad Nizam Nik, E-mail: niknizam@fbb.utm.my

2016-02-01

The antibacterial activity of regenerated NaY zeolite (thermal treatment from cetyltrimethyl ammonium bromide (CTAB)-modified NaY zeolite and pretreatment with Na ions) loaded with silver ions were examined using the broth dilution minimum inhibitory concentration (MIC) method against Escherichia coli (E. coli ATCC 11229) and Staphylococcus aureus (S. aureus ATCC 6538). X-ray diffraction (XRD), attenuated total reflectance–Fourier transform infrared (ATR–FTIR) spectroscopy, field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and chemical elemental analyses were used to characterize the regenerated NaY and AgY zeolites. The XRD patterns indicated that the calcination and addition of silver ions on regenerated NaY zeolite did not affect the structure of the regenerated NaY zeolite as the characteristic peaks of the NaY zeolite were retained, and no new peaks were observed. The regenerated AgY zeolite showed good antibacterial activity against both bacteria strains in distilled water, and the antibacterial activity of the samples increased with increasing Ag loaded on the regenerated AgY zeolite; the regenerated AgY zeolite was more effective against E. coli than S. aureus. However, the antibacterial activity of the regenerated AgY was not effective in saline solution for both bacteria. The study showed that CTAB-modified NaY zeolite materials could be regenerated to NaY zeolite using thermal treatment (550 °C, 5 h) and this material has excellent performance as an antibacterial agent after silver ions loading. - Highlights: • Thermal treatment was used to regenerate surfactant modified zeolite. • The regenerated NaY zeolite formed was added with different silver loadings. • Regenerated AgY zeolite was tested for antibacterial activity on E. coli and S. aureus. • The antibacterial activity increased with increased of the amount of silver loadings. • The zeolite structure did not change with thermal and modification

Characterization and antibacterial activity of silver exchanged regenerated NaY zeolite from surfactant-modified NaY zeolite

International Nuclear Information System (INIS)

Salim, Mashitah Mad; Malek, Nik Ahmad Nizam Nik

2016-01-01

The antibacterial activity of regenerated NaY zeolite (thermal treatment from cetyltrimethyl ammonium bromide (CTAB)-modified NaY zeolite and pretreatment with Na ions) loaded with silver ions were examined using the broth dilution minimum inhibitory concentration (MIC) method against Escherichia coli (E. coli ATCC 11229) and Staphylococcus aureus (S. aureus ATCC 6538). X-ray diffraction (XRD), attenuated total reflectance–Fourier transform infrared (ATR–FTIR) spectroscopy, field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and chemical elemental analyses were used to characterize the regenerated NaY and AgY zeolites. The XRD patterns indicated that the calcination and addition of silver ions on regenerated NaY zeolite did not affect the structure of the regenerated NaY zeolite as the characteristic peaks of the NaY zeolite were retained, and no new peaks were observed. The regenerated AgY zeolite showed good antibacterial activity against both bacteria strains in distilled water, and the antibacterial activity of the samples increased with increasing Ag loaded on the regenerated AgY zeolite; the regenerated AgY zeolite was more effective against E. coli than S. aureus. However, the antibacterial activity of the regenerated AgY was not effective in saline solution for both bacteria. The study showed that CTAB-modified NaY zeolite materials could be regenerated to NaY zeolite using thermal treatment (550 °C, 5 h) and this material has excellent performance as an antibacterial agent after silver ions loading. - Highlights: • Thermal treatment was used to regenerate surfactant modified zeolite. • The regenerated NaY zeolite formed was added with different silver loadings. • Regenerated AgY zeolite was tested for antibacterial activity on E. coli and S. aureus. • The antibacterial activity increased with increased of the amount of silver loadings. • The zeolite structure did not change with thermal and modification

Carbon dioxide sequestration using NaHSO4 and NaOH: A dissolution and carbonation optimisation study.

Science.gov (United States)

Sanna, Aimaro; Steel, Luc; Maroto-Valer, M Mercedes

2017-03-15

The use of NaHSO 4 to leach out Mg fromlizardite-rich serpentinite (in form of MgSO 4 ) and the carbonation of CO 2 (captured in form of Na 2 CO 3 using NaOH) to form MgCO 3 and Na 2 SO 4 was investigated. Unlike ammonium sulphate, sodium sulphate can be separated via precipitation during the recycling step avoiding energy intensive evaporation process required in NH 4 -based processes. To determine the effectiveness of the NaHSO 4 /NaOH process when applied to lizardite, the optimisation of the dissolution and carbonation steps were performed using a UK lizardite-rich serpentine. Temperature, solid/liquid ratio, particle size, concentration and molar ratio were evaluated. An optimal dissolution efficiency of 69.6% was achieved over 3 h at 100 °C using 1.4 M sodium bisulphate and 50 g/l serpentine with particle size 75-150 μm. An optimal carbonation efficiency of 95.4% was achieved over 30 min at 90 °C and 1:1 magnesium:sodium carbonate molar ratio using non-synthesised solution. The CO 2 sequestration capacity was 223.6 g carbon dioxide/kg serpentine (66.4% in terms of Mg bonded to hydromagnesite), which is comparable with those obtained using ammonium based processes. Therefore, lizardite-rich serpentinites represent a valuable resource for the NaHSO 4 /NaOH based pH swing mineralisation process. Copyright © 2016 Elsevier Ltd. All rights reserved.

Characterization and antibacterial activity of silver exchanged regenerated NaY zeolite from surfactant-modified NaY zeolite.

Science.gov (United States)

Salim, Mashitah Mad; Malek, Nik Ahmad Nizam Nik

2016-02-01

The antibacterial activity of regenerated NaY zeolite (thermal treatment from cetyltrimethyl ammonium bromide (CTAB)-modified NaY zeolite and pretreatment with Na ions) loaded with silver ions were examined using the broth dilution minimum inhibitory concentration (MIC) method against Escherichia coli (E. coli ATCC 11229) and Staphylococcus aureus (S. aureus ATCC 6538). X-ray diffraction (XRD), attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy, field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and chemical elemental analyses were used to characterize the regenerated NaY and AgY zeolites. The XRD patterns indicated that the calcination and addition of silver ions on regenerated NaY zeolite did not affect the structure of the regenerated NaY zeolite as the characteristic peaks of the NaY zeolite were retained, and no new peaks were observed. The regenerated AgY zeolite showed good antibacterial activity against both bacteria strains in distilled water, and the antibacterial activity of the samples increased with increasing Ag loaded on the regenerated AgY zeolite; the regenerated AgY zeolite was more effective against E. coli than S. aureus. However, the antibacterial activity of the regenerated AgY was not effective in saline solution for both bacteria. The study showed that CTAB-modified NaY zeolite materials could be regenerated to NaY zeolite using thermal treatment (550°C, 5h) and this material has excellent performance as an antibacterial agent after silver ions loading. Copyright © 2015 Elsevier B.V. All rights reserved.

Composition and thermochemistry of the equilibrium vapour of the systems NaI-FeI2 and NaI-PbI2

International Nuclear Information System (INIS)

Hilpert, K.; Gerads, H.; Koberts, D.; Miller, M.

1987-01-01

The vaporization of NaI/FeI 2 and NaI/PbI 2 samples of equimolar composition was investigated was investigated in the temperature ranges between 574 to 683 K and 562 to 669 K, respectively, by using the mass spectrometric Knudsen effusion method. The gaseous species I, I 2 , NaI, (NaI) 2 , FeI 2 , (FeI 2 ) 2 , FeI 3 , NaFeI 3 , and Na 2 FeI 4 (NaI-FeI 2 system) as well as NaI, (NaI) 2 , PbI 2 , (PbI 2 ) 2 , and NaPbI 3 (NaI-PbI 2 system) are present in the equilibrium vapours. The equilibrium partial pressures of these species were determined with the exception of I, I 2 , and FeI 3 . Enthalpies and entropies of dissociation resulted for the reactions NaFeI 3 (g) ↔ NaI(g)+FeI 2 (g) (1), Na 2 FeI 4 (g) ↔ 2NaI(g)+FeI 2 (g) and (2) NaPbI 3 (g) ↔ NaI(g)+PbI 2 (g) (3) as Δ d H 298 0 (Eq. (1)) = 184±5 kJ mol -1 , Δ d S 298 0 (Eq. (1)) = 143±8 J mol -1 K -1 ; Δ d H 298 0 (Eq. (2)) = 333±9 kJ mol -1 , Δ d S 298 0 (Eq. (2)) = 274±14 J mol -1 K -1 ; and Δ d H 298 0 (Eq. (3)) = 168±5 kJ mol -1 , Δ d S 298 0 (Eq. (3)) = 151±9 J mol -1 K -1 . Equilibrium constants for these reactions are additionally given. The pressures of NaFeI 3 (g) and NaPbI 3 (g) as all as their enthalpies of dissociation are discussed with respect to their significance of semi empirical rules. (orig.)

Adsorption and Formation of Small Na Clusters on Pristine and Double-Vacancy Graphene for Anodes of Na-Ion Batteries.

Science.gov (United States)

Liang, Zhicong; Fan, Xiaofeng; Zheng, Weitao; Singh, David J

2017-05-24

Layered carbon is a likely anode material for Na-ion batteries (NIBs). Graphitic carbon has a low capacity of approximately 35 (mA h)/g due to the formation of NaC 64 . Using first-principles methods including van der Waals interactions, we analyze the adsorption of Na ions and clusters on graphene in the context of anodes. The interaction between Na ions and graphene is found to be weak. Small Na clusters are not stable on the surface of pristine graphene in the electrochemical environment of NIBs. However, we find that Na ions and clusters can be stored effectively on defected graphene that has double vacancies. In addition, the adsorption energy of small Na clusters near a double vacancy is found to decrease with increasing cluster size. With high concentrations of vacancies the capacity of Na on defective graphene is found to be as much as 10-30 times higher than that of graphitic carbon.

Novel regulation of cardiac Na pump via phospholemman.

Science.gov (United States)

Pavlovic, Davor; Fuller, William; Shattock, Michael J

2013-08-01

As the only quantitatively significant Na efflux pathway from cardiac cells, the Na/K ATPase (Na pump) is the primary regulator of intracellular Na. The transmembrane Na gradient it establishes is essential for normal electrical excitability, numerous coupled-transport processes and, as the driving force for Na/Ca exchange, thus setting cardiac Ca load and contractility. As Na influx varies with electrical excitation, heart rate and pathology, the dynamic regulation of Na efflux is essential. It is now widely recognized that phospholemman, a 72 amino acid accessory protein which forms part of the Na pump complex, is the key nexus linking cellular signaling to pump regulation. Phospholemman is the target of a variety of post-translational modifications (including phosphorylation, palmitoylation and glutathionation) and these can dynamically alter the activity of the Na pump. This review summarizes our current understanding of the multiple regulatory mechanisms that converge on phospholemman and govern NA pump activity in the heart. The corrected Fig. 4 is reproduced below. The publisher would like to apologize for any inconvenience caused. [corrected]. Copyright © 2013. Published by Elsevier Ltd.

76 FR 12340 - Gulf of Mexico Fishery Management Council; Public Meetings

Science.gov (United States)

2011-03-07

...: Tuesday, March 22, 2011, Hilton St. Petersburg Carillon Parkway, 950 Lake Carillon Drive, St. Petersburg...., Key West, FL, telephone: (305) 295-5000; Monday, March 28, 2011, Hilton Garden Inn, 4535 Williams Blvd., Kenner, LA, telephone: (504) 712-0504 Tuesday, March 29, 2011, Hilton Garden Inn, 14108 Airport Rd...

Journal of Earth System Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Present paper uses powerful technique of interval neural network (INN) to simulate and estimate structural response of multi-storey shear buildings subject to earthquake motion. The INN is first trained for a real earthquake data, viz., the ground acceleration as input and the numerically generated responses of different ...

Dgroup: DG01746 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 48 ... Loop diuretic ... Loop diuretics, sulfonamide SLC12A1 (NKCC2) [HSA:6557] [KO:K14425] SLC12A2 (NKCC1) [HSA:6558] [KO:K10951] ... ...P17/USP/INN) ... D01634 ... Piretanide (JAN/USAN/INN) Cardiovascular agent ... DG01690 ... Sulfonamide diuretic ... DG017

77 FR 36396 - Safety Zones; Fireworks Displays in Captain of the Port Long Island Sound Zone

Science.gov (United States)

2012-06-19

... viewing or submitting material to the docket, call Renee V. Wright, Program Manager, Docket Operations... Fireworks. South Bay off Snapper Inn Restaurant, Oakdale, NY. 5. North Bay 4th of July Fireworks... p.m. Location: A point on the Connetquot River off Snapper Inn Restaurant, Oakdale, NY in...

All new for NA62

CERN Multimedia

Antonella Del Rosso

2012-01-01

This week sees the start of the first run of the new NA62 experiment. This will be a unique opportunity for the collaboration to test its new beam, new detectors and new data acquisition system before the physics run in 2014. Speaking to the Bulletin, the NA62 technical coordinator Ferdinand Hahn shares the many challenges that the various teams faced to be on time for beam. Ready, steady, start!   A Large Angle Veto detector (white) in place in the NA62 decay volume (blue). With components from almost all the detectors in place downstream of the decay point of the mother particles – the kaons – and of the KTAG detector that tags the kaons before they decay, NA62 is ready for its first technical run. This unique run will test all the equipment as well as the trigger and the data acquisition systems. “This year, we will have about five weeks of beam from the SPS before the long shutdown of all the CERN machines,” says Ferdinand Hahn, NA62 Technical Co-...

Effect of chloride substitution on the order–disorder transition in NaBH4 and Na11BD4

International Nuclear Information System (INIS)

Olsen, Jørn Eirik; Karen, Pavel; Sørby, Magnus H.; Hauback, Bjørn C.

2014-01-01

Graphical abstract: Interactions that order the BD 4 - tetrahedra below the order–disorder transition became increasingly frustrated by the solute in the Na( 11 BD 4 ) 1−x Cl x solid solutions, and the order disappears at x = 0.158. Highlights: • The order–disorder transition temperature for Na(BH 4 ) 1−x Cl x and Na( 11 BD 4 ) 1−x Cl x is highly dependent on the Cl-content, x. • The transition is characterized by DSC for Na( 11 BD 4 ) 1−x Cl x for x = 0, 0.10 and 0.15. • No transition is observed for x ⩾ 0.20 on cooling to 8 K. • The crystal structures are reported for Na 11 BD 4 at room temperature and 8 K and Na( 11 BD 4 ) 1−x Cl x (x = 0.10, 0.15, 0.20 and 0.25) at 8 K from powder neutron diffraction. -- Abstract: Phase transition associated with anion disordering over two orientations in Na 11 BD 4 (NaBH 4 ) and its solid solutions with NaCl, Na( 11 BD 4 ) 1−x Cl x , is investigated with powder diffraction (neutron and synchrotron radiation), differential scanning calorimetry and Raman spectroscopy. Upon heating, the transition temperature extrapolated to zero rate of heating is 192.2 K for Na 11 BD 4 , ΔS = 4.41 J/mol K, hysteresis 1.7 K and the volume increase 0.43%. Thermal parameters of the transition in Na( 11 BD 4 ) 1−x Cl x follow a colligative-property model of an ideal solution, with x = 0.158(1) as the critical concentration at which the ordering interactions and the transition itself are eliminated. On approaching this limit, the tetragonal distortion of the ordered structure decreases somewhat towards the cubic average, and this is associated with a partial disorder of the tetrahedral anions seen by diffraction methods. In fact, a 3% disorder is already present in the pure solvent of the solid solution (Na 11 BD 4 ) at 8 K

Neutron diffraction studies of the Na-ion battery electrode materials NaCoCr{sub 2}(PO{sub 4}){sub 3}, NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yahia, H. Ben [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, P.O. Box 5825 Doha (Qatar); Essehli, R., E-mail: ressehli@qf.org.qa [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, P.O. Box 5825 Doha (Qatar); Avdeev, M. [Australian Nuclear Science and Technology Organisation, New Illawarra Road, Lucas Heights NSW 2234 (Australia); Park, J-B.; Sun, Y-K. [Department of Energy Engineering Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Al-Maadeed, M.A. [Center for Advanced Materials (CAM), Qatar University, 2713 Doha (Qatar); Belharouak, I., E-mail: ibelharouak@qf.org.qa [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, P.O. Box 5825 Doha (Qatar)

2016-06-15

The new compounds NaCoCr{sub 2}(PO{sub 4}){sub 3}, NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3} were synthesized by sol-gel method and their crystal structures were determined by using neutron powder diffraction data. These compounds were characterized by galvanometric cycling and cyclic voltammetry. NaCoCr{sub 2}(PO{sub 4}){sub 3}, NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3} crystallize with a stuffed α-CrPO{sub 4}-type structure. The structure consists of a 3D-framework made of octahedra and tetrahedra that are sharing corners and/or edges generating channels along [100] and [010], in which the sodium atoms are located. Of significance, in the structures of NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3} a statistical disorder Ni{sup 2+}/Cr{sup 3+} was observed on both the 8g and 4a atomic positions, whereas in NaCoCr{sub 2}(PO{sub 4}){sub 3} the statistical disorder Co{sup 2+}/Cr{sup 3+} was only observed on the 8g atomic position. When tested as negative electrode materials, NaCoCr{sub 2}(PO{sub 4}){sub 3}, NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3} delivered specific capacities of 352, 385, and 368 mA h g{sup −1}, respectively, which attests to the electrochemical activity of sodium in these compounds. - Highlights: • NaCoCr{sub 2}(PO{sub 4}){sub 3}, NaNiCr{sub 2}(PO{sub 4}){sub 3}, and Na{sub 2}Ni{sub 2}Cr(PO{sub 4}){sub 3} were synthesized by sol-gel method. • The crystal structures were determined by using neutron powder diffraction data. • The three compounds crystallize with a stuffed α-CrPO{sub 4}-type structure. • The three compounds were tested as anodes in sodium-ion batteries. • Relatively high specific capacities were obtained for these compounds.

Evaluation of NaX and NaY packed beds for chromium uptake from multicomponent solution

Directory of Open Access Journals (Sweden)

Maria Angélica Simões Dornellas de Barros

2014-04-01

Full Text Available In this paper the removal of chromium from Cr/Ca/Mg/K and Cr/Ca/Mg/K/Na solutions was investigated in NaX and NaY packed beds. The breakthrough curves presented some overshooting phenomena where chromium ions displaced the previous exchanged cations. Length of unused bed, overall mass transfer coefficient, operational ratio and dimensionless variance were obtained. According to such mass transfer parameters it was concluded that the chromium uptake is influenced by the competition and interaction of the entering ions. Such influences were verified through some differences in the dynamic selectivity obtained for each system. NaY seemed to have a higher affinity towards Cr3+ and its sites were more efficiently used in the ion exchange process.

Water transport by the renal Na(+)-dicarboxylate cotransporter

DEFF Research Database (Denmark)

Meinild, A K; Loo, D D; Pajor, A M

2000-01-01

. This solute-coupled influx of water took place in the absence of, and even against, osmotic gradients. There was a strict stoichiometric relationship between Na(+), substrate, and water transport of 3 Na(+), 1 dicarboxylate, and 176 water molecules/transport cycle. These results indicate that the renal Na......This study investigated the ability of the renal Na(+)-dicarboxylate cotransporter, NaDC-1, to transport water. Rabbit NaDC-1 was expressed in Xenopus laevis oocytes, cotransporter activity was measured as the inward current generated by substrate (citrate or succinate), and water transport...... was monitored by the changes in oocyte volume. In the absence of substrates, oocytes expressing NaDC-1 showed an increase in osmotic water permeability, which was directly correlated with the expression level of NaDC-1. When NaDC-1 was transporting substrates, there was a concomitant increase in oocyte volume...

Pioneering instrumentation aspects of NA60

International Nuclear Information System (INIS)

David, Andre

2004-01-01

NA60 is taking data with proton and heavy-ion beams at the CERN SPS. Although building up on previous experiments, the dimuon physics programme of NA60 places very demanding requirements on its new detectors, in terms of radiation tolerance, granularity and read-out electronics speed. We start by comparing dimuon detection strategies in NA60 with those of previous experiments. We then describe the new detectors used in NA60, placing particular emphasis on their technological pioneering aspects as well as on their contributions to the overall physics performance of the experiment

Occlusion of 22Na+ and 86Rb+ in membrane-bound and soluble protomeric alpha beta-units of Na,K-ATPase

International Nuclear Information System (INIS)

Vilsen, B.; Andersen, J.P.; Petersen, J.; Jorgensen, P.L.

1987-01-01

In this work, we examined occlusion of 22 Na+ and 86 Rb+ in membranous and detergent-solubilized Na,K-ATPase from outer renal medulla. Optimum conditions for occlusion of 22 Na+ were provided by formation of the phosphorylated complex from the beta,gamma-bidentate complex of chromium (III) with ATP (CrATP). Release of occluded cations occurred at equally slow rates in soluble and membrane-bound Na,K-ATPase. Values of 22 Na+ occlusion as high as 11 nmol/mg of protein were measured, corresponding to 1.8-2.7 mol of Na+/mol of phosphorylated Na,K-ATPase as determined by 32 P incorporation from [gamma- 32 P]CrATP. Maximum capacity for phosphorylation from [gamma- 32 P]CrATP was 6 nmol/mg of protein and equal to capacities for binding of [48V]vanadate and [ 3 H]ouabain. The stoichiometry for occlusion of Rb+ was close to 2 Rb+ ions/phosphorylation site. In an analytical ultracentrifuge, the soluble Na+- or Rb+-occluded complexes showed sedimentation velocities (S20,w = 6.8-7.4) consistent with monomeric alpha beta-units. The data show that soluble monomeric alpha beta-units of Na,K-ATPase can occlude Rb+ or Na+ with the same stoichiometry as the membrane-bound enzyme. The structural basis for occlusion of cations in Na,K-ATPase is suggested to be the formation of a cavity inside a monomeric alpha beta-unit constituting the minimum protein unit required for active Na,K-transport

Transcriptional regulators of Na, K-ATPase subunits

Directory of Open Access Journals (Sweden)

Zhiqin eLi

2015-10-01

Full Text Available The Na,K-ATPase classically serves as an ion pump creating an electrochemical gradient across the plasma membrane that is essential for transepithelial transport, nutrient uptake and membrane potential. In addition, Na,K-ATPase also functions as a receptor, a signal transducer and a cell adhesion molecule. With such diverse roles, it is understandable that the Na,K-ATPase subunits, the catalytic alpha-subunit, the beta-subunit and the FXYD proteins, are controlled extensively during development and to accommodate physiological needs. The spatial and temporal expression of Na,K-ATPase is partially regulated at the transcriptional level. Numerous transcription factors, hormones, growth factors, lipids and extracellular stimuli modulate the transcription of the Na,K-ATPase subunits. Moreover, epigenetic mechanisms also contribute to the regulation of Na,K-ATPase expression. With the ever growing knowledge about diseases associated with the malfunction of Na,K-ATPase, this review aims at summarizing the best-characterized transcription regulators that modulate Na,K-ATPase subunit levels. As abnormal expression of Na,K-ATPase subunits have been observed in many carcinoma, we will also discuss transcription factors that are associated with epithelial-to-mesenchymal transition, a crucial step in the progression of many tumors to malignant disease.

Sepsis does not alter red blood cell glucose metabolism or Na+ concentration: A 2H-, 23Na-NMR study

International Nuclear Information System (INIS)

Hotchkiss, R.S.; Song, S.K.; Ling, C.S.; Ackerman, J.J.; Karl, I.E.

1990-01-01

The effects of sepsis on intracellular Na+ concentration ([Na+]i) and glucose metabolism were examined in rat red blood cells (RBCs) by using 23Na- and 2H-nuclear magnetic resonance (NMR) spectroscopy. Sepsis was induced in 15 halothane-anesthetized female Sprague-Dawley rats by using the cecal ligation and perforation technique; 14 control rats underwent cecal manipulation without ligation. The animals were fasted for 36 h, but allowed free access to water. At 36 h postsurgery, RBCs were examined by 23Na-NMR by using dysprosium tripolyphosphate as a chemical shift reagent. Human RBCs from 17 critically ill nonseptic patients and from 7 patients who were diagnosed as septic were also examined for [Na+]i. Five rat RBC specimens had [Na+]i determined by both 23Na-NMR and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). For glucose metabolism studies, RBCs from septic and control rats were suspended in modified Krebs-Henseleit buffer containing [6,6-2H2]glucose and examined by 2H-NMR. No significant differences in [Na+]i or glucose utilization were found in RBCs from control or septic rats. There were no differences in [Na+]i in the two groups of patients. The [Na+]i determined by NMR spectroscopy agreed closely with measurements using ICP-AES and establish that 100% of the [Na+]i of the RBC is visible by NMR. Glucose measurements determined by 2H-NMR correlated closely (correlation coefficient = 0.93) with enzymatic analysis. These studies showed no evidence that sepsis disturbed RBC membrane function or metabolism

SPOLNO NADLEGOVANJE NA DELOVNEM MESTU

OpenAIRE

Rubič, Gašper

2016-01-01

V diplomskem delu smo v uvodu predstavili problem spolnega nadlegovanja na delovnem mestu in predstavili podjetje TEKSTIL d.d. V nadaljevanju smo z anketo raziskali, ali problem spolnega nadlegovanja na delovnem mestu v obravnavanem podjetju obstaja in če, kako se nanj odziva okolje. V teoretičnem delu smo nadaljevali in predstavili definicijo spolnega nadlegovanja, ki je kakršna koli oblika nezaželenega verbalnega in neverbalnega ali fizičnega ravnanja spolne narave z učinkom ali nameno...

Photodesorption of Na atoms from rough Na surfaces

DEFF Research Database (Denmark)

Balzer, Frank; Gerlach, R.; Manson, J.R.

1997-01-01

We investigate the desorption of Na atoms from large Na clusters deposited on dielectric surfaces. High-resolution translational energy distributions of the desorbing atoms are determined by three independent methods, two-photon laser-induced fluorescence, as well as single-photon and resonance......-enhanced two-photon ionization techniques. Upon variation of surface temperature and for different substrates (mica vs lithium fluoride) clear non-Maxwellian time-of-flight distributions are observed with a cos θ angular dependence and most probable kinetic energies below that expected of atoms desorbing from...... atoms are scattered by surface vibrations. Recent experiments providing time constants for the decay of the optical excitations in the clusters support this model. The excellent agreement between experiment and theory indicates the importance of both absorption of the laser photons via direct excitation...

Evaluation of {sup 23}Na(n,2n){sup 22}Na reaction cross-sections

Energy Technology Data Exchange (ETDEWEB)

Manokhin, V N [Institute of Physics and Power Engineering, Obninsk (Russian Federation)

1997-06-01

Using available experimental data and (n,2n) excitation function systematics {sup 23}Na(n,2n){sup 22}Na reaction cross-sections were evaluated for energies ranging from the reaction threshold to 20 MeV. (author). 21 refs, 1 fig., 2 tabs.

Formation of hydroxyl groups and exchange with deuterium on NaHX and NaHY zeolites

International Nuclear Information System (INIS)

Kubelkova, L.; Novakova, J.

1976-01-01

Deammoniation and dehydroxylation of Na(NH 4 )X and Na(NH 4 )Y zeolites were compared. With the X type, both processes overlapped and proceeded more easily than with the Y type. Both H forms contained structural OH groups and hydroxyls denoted as SiOH, to which the 3740 cm -1 band in the IR spectrum was assigned. In addition, the NaHX zeolite contained OH groups characterized by the 3700 and 3600 cm -1 bands. Certain differences in the behaviour of NaHX and NaHY zeolites during deammoniation and dehydroxylation might be attributed to the presence of ''non-localizable'' H atoms. The active sites for the D 2 -OH exchange were probably formed during dehydroxylation. Hydrogen in SiOH groups was replaced by deuterium in both zeolite types more slowly than H atoms in other OH groups, which influenced the kinetic variations in the gaseous phase. The presence of water in the gaseous phase affected the kinetics and could distort the determination of the number of H atoms bound in the zeolites. (author)

75 FR 65263 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation; Withdrawal of Proposed Rule

Science.gov (United States)

2010-10-22

...'' or ``Act'') as ``an inn, hotel, motel, or other place of lodging, except for an establishment located... interpretive rule to interpret ``public accommodations facility'' in the VGB Act as ``an inn, hotel, motel, or... CONSUMER PRODUCT SAFETY COMMISSION 16 CFR Part 1450 Virginia Graeme Baker Pool and Spa Safety Act...

High resolution laser spectroscopy of the D lines of on-line produced 21Na, 22Na, 24Na, 25Na using a new high sensitivity method of detection of optical resonances

International Nuclear Information System (INIS)

Huber, G.; Thibault, G.; Klapisch, R.; Duong, H.T.; Vialle, J.L.; Pinard, I.; Juncar, P.; Jacquinot, P.

1975-01-01

A polyisotopic sodium beam of 21 - 25 Na, produced by spallation of Al, was illuminated by a tunable dye laser. The atomic beam, analyzed by a sixpole magnet is then ionized and detected after a mass spectrometer. The results are the isotope shifts, nuclear magnetic moment and quadrupole moment of 25 Na [fr

OGLAŠEVANJE NA SOCIALNEM OMREŽJU FACEBOOK, NA PRIMERU SPLETICNA.SI

OpenAIRE

Reisman, Nina

2011-01-01

Internet je od svojega razvoja dolgo časa obstajal kot prostor za enostransko komunikacijo. Isto se je dogajalo na televiziji, radiu in časopisih, kjer je javnost sprejemala informacije, ki jih je nekdo pripravil. Tradicionalni mediji so hitro doumeli, da takšna vrsta komunikacije ni naravna in ne predstavlja najboljšega ohranjanja gledalcev in poslušalcev. Začela se je uporabljati dvosmerna komunikacija. Trenutno v svetu najbolje poznan primer dvosmerne komunikacije je socialno omrežje F...

FTIR spectra of the solid solutions (Na0.88K0.12)VO3, (Na0.5K0.5)VO3, and Na(V0.66P0.34)O3

Science.gov (United States)

de Waal, D.; Heyns, A. M.

1992-03-01

It is known that three different solid solutions, (Na0.88K0.12)VO3, (Na0.5K0.5)VO3 and Na(V0.66P0.34)O3, form in the (Na,K)(V,P)O3 system. These compounds all have monoclinic crystal structures similar to the pure alkali metal metavanadates containing small cations, e.g. Li+ and Na+ (Space group C2/c). Metavanadates with large cations like K+, Rb+, C+s and NH+4 form orthorhombic crystals, space group Pbcm. All those are structurally related to the silicate pyroxenes. Na(V0.66P0.34)O3 and (Na0.88K0.12)VO3 have the same modified diopside structure as (alpha) - NaVO3 while (Na0.5K0.5)VO3 adopts the true diopside structure. The infrared spectra of the three solid solutions are reported here in comparison with those of (alpha) -NaVO3 and KVO3. The results are also correlated with those obtained in two independent high pressure Raman studies of NH4VO3 and RbVO3 as the introduction of a larger cation like K+ should increase the pressure in the structure.

Medetomidīna un detomidīna hidrogēnhlorīdu struktūra noteikšana

OpenAIRE

Smuļko, Irina

2012-01-01

Medetomidīna un detomidīna hidrogēnhlorīdu struktūras noteikšana. Smuļko I., zinātniskais vadītājs Dr. ķīm., asoc. prof. Actiņš A. Maģistra darbs, 52 lappuses, 37 attēli, 6 tabulas, 29 literatūras avoti. Latviešu valodā. Maģistra darbā pētītas farmaceitiski aktīvās vielas – medetomidīna un detomidīna hidrogēnhlorīdi. Veikti mēģinājumi detomidīna bezūdens formas un monohidrāta struktūras noteikšanai, kā arī medetomidīna bezūdens formu A un B struktūras noteikšanai. Struktūras noteikšanai iz...

NAKUPOVANJE NA SPLETU

OpenAIRE

Visenjak, Monika

2013-01-01

Nakupovanje na spletu je prihodnost poslovanja. Za podjetja pomeni manjše stroške, lažje prilagajanje tržnim pogojem. Hitreje lahko razvijajo odnose in analizirajo uporabnike, saj jim je dan dostop o nakupnih podatkih uporabnika. Za potrošnike je nakupovanje na spletu možnost hitrega, preprostega in učinkovitega nakupovanja od doma ali pisarne. Pomembno je, da se seznanijo z vsemi informacijami in pogoji spletnih trgovin, saj se lahko le tako izognejo nezadovoljstvu ob nakupu v spletni trgovi...

The Na+ transporter, TaHKT1;5-D, limits shoot Na+ accumulation in bread wheat

KAUST Repository

Byrt, Caitlin Siobhan

2014-10-01

Bread wheat (Triticum aestivum L.) has a major salt tolerance locus, Kna1, responsible for the maintenance of a high cytosolic K+/Na+ ratio in the leaves of salt stressed plants. The Kna1 locus encompasses a large DNA fragment, the distal 14% of chromosome 4DL. Limited recombination has been observed at this locus making it difficult to map genetically and identify the causal gene. Here, we decipher the function of TaHKT1;5-D, a candidate gene underlying the Kna1 locus. Transport studies using the heterologous expression systems Saccharomyces cerevisiae and Xenopus laevis oocytes indicated that TaHKT1;5-D is a Na+-selective transporter. Transient expression in Arabidopsis thaliana mesophyll protoplasts and in situ polymerase chain reaction indicated that TaHKT1;5-D is localised on the plasma membrane in the wheat root stele. RNA interference-induced silencing decreased the expression of TaHKT1;5-D in transgenic bread wheat lines which led to an increase in the Na+ concentration in the leaves. This indicates that TaHKT1;5-D retrieves Na+ from the xylem vessels in the root and has an important role in restricting the transport of Na+ from the root to the leaves in bread wheat. Thus, TaHKT1;5-D confers the essential salinity tolerance mechanism in bread wheat associated with the Kna1 locus via shoot Na+ exclusion and is critical in maintaining a high K+/Na+ ratio in the leaves. These findings show there is potential to increase the salinity tolerance of bread wheat by manipulation of HKT1;5 genes.

The Na+ transporter, TaHKT1;5-D, limits shoot Na+ accumulation in bread wheat

KAUST Repository

Byrt, Caitlin Siobhan; Xu, Bo; Krishnan, Mahima; Lightfoot, Damien; Athman, Asmini; Jacobs, Andrew Keith; Watson-Haigh, Nathan S.; Plett, Darren; Munns, Rana; Tester, Mark A.; Gilliham, Matthew

2014-01-01

Bread wheat (Triticum aestivum L.) has a major salt tolerance locus, Kna1, responsible for the maintenance of a high cytosolic K+/Na+ ratio in the leaves of salt stressed plants. The Kna1 locus encompasses a large DNA fragment, the distal 14% of chromosome 4DL. Limited recombination has been observed at this locus making it difficult to map genetically and identify the causal gene. Here, we decipher the function of TaHKT1;5-D, a candidate gene underlying the Kna1 locus. Transport studies using the heterologous expression systems Saccharomyces cerevisiae and Xenopus laevis oocytes indicated that TaHKT1;5-D is a Na+-selective transporter. Transient expression in Arabidopsis thaliana mesophyll protoplasts and in situ polymerase chain reaction indicated that TaHKT1;5-D is localised on the plasma membrane in the wheat root stele. RNA interference-induced silencing decreased the expression of TaHKT1;5-D in transgenic bread wheat lines which led to an increase in the Na+ concentration in the leaves. This indicates that TaHKT1;5-D retrieves Na+ from the xylem vessels in the root and has an important role in restricting the transport of Na+ from the root to the leaves in bread wheat. Thus, TaHKT1;5-D confers the essential salinity tolerance mechanism in bread wheat associated with the Kna1 locus via shoot Na+ exclusion and is critical in maintaining a high K+/Na+ ratio in the leaves. These findings show there is potential to increase the salinity tolerance of bread wheat by manipulation of HKT1;5 genes.

Osmotic and ionic effects of NaCl and Na₂SO₄ salinity on Phragmites australis

DEFF Research Database (Denmark)

Pagter, Majken; Bragato, Claudia; Malagoli, Mario

2009-01-01

Osmotic and ion-specific effects of NaCl and Na2SO4 on Phragmites australis (Cav.) Trin ex. Steud. were investigated in a laboratory experiment by examining effects of iso-osmotic solutions of NaCl and Na2SO4 on growth, osmolality of cell sap, proline content, elemental composition and gas exchange....... Plants were supplied with a control standard nutrient solution (Ψ = -0.09 MPa) or solutions of NaCl or Na2SO4 at water potentials of -0.50, -1.09 or -1.74 MPa. Salt treatments increased root concentrations of Na and S or Cl, whereas P. australis had efficient mechanisms for exclusion of Na and S...... and partly Cl ions from the leaves. Incomplete exclusion of Cl from the leaves may affect aboveground biomass production, which was significantly more reduced by NaCl than Na2SO4. Stomatal conductance was negatively influenced by decreasing water potentials caused by NaCl or Na2SO4, implying that a non...

Polarization and collision velocity dependence of associative ionization in cold Na (3p)-Na(3p) collisions

NARCIS (Netherlands)

Meijer, H.A.J.

1990-01-01

We studied the polarization dependence of the associative ionization (AI) process Na(3p) + Na(3p) → Na2+ at collision velocities between 100 and 700 m/s (5 and 200 K), using linearly and circularly polarized light for the excitation. We found that the polarization dependence varies strongly in the

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

2016-04-11

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Erythrocyte Na+/K+ ATPase activity measured with sup 23 Na NMR

Energy Technology Data Exchange (ETDEWEB)

Ouwerkerk, R.; van Echteld, C.J.; Staal, G.E.; Rijksen, G. (University Hospital, Utrecht (Netherland))

1989-11-01

A {sup 23}Na NMR assay for measurement of erythrocyte Na+/K+ ATPase activity is presented. Using the nonpermeant shift reagent dysprosium tripolyphosphate the signals of intra- and extracellular sodium are separated, enabling measurement of sodium fluxes nondestructively, without the need to physically separate the cells from their environment. By increasing membrane permeability with nystatin we have shown that the assay allows the detection of differences in membrane permeability. With low doses of nystatin the ouabain-sensitive sodium flux increased more than twofold. With high doses of nystatin the Na+/K+ pump could not prevent an almost total equilibration of intra- and extracellular sodium. All sodium that entered the cells remained NMR visible, proving that sodium influx can be measured quantitatively. {sup 31}P NMR spectra taken before and after the assay revealed a slight acidification of the cells and no significant change in ATP concentration. No evidence of Dy3+ entering the cell was observed.

Molecular dynamics investigation of Na+ in Na2Ni2TeO6

International Nuclear Information System (INIS)

Sau, Kartik; Kumar, P. Padma

2014-01-01

An inter-atomic potential for Na 2 Ni 2 TeO 6 in the Parrinello- Rahman-Vashishta (PRV) model is parameterized empirically. The potential reproduces variety of structural and transport properties of that material in good agreement with recent experimental results. The study provides fresh insights on the migration channels and mechanism of Na + in the system

Efeito do plasma de oxigênio na dentina previamente exposta ao NaOCl