WorldWideScience

Sample records for n-type modulation doped

  1. A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

    Science.gov (United States)

    Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

    2017-11-09

    In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

  2. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...... is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT....

  3. Potassium-doped n-type bilayer graphene

    Science.gov (United States)

    Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

    2018-01-01

    Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

  4. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  5. Origins of n -type doping difficulties in perovskite stannates

    Science.gov (United States)

    Weston, L.; Bjaalie, L.; Krishnaswamy, K.; Van de Walle, C. G.

    2018-02-01

    The perovskite stannates (A SnO3 ; A = Ba, Sr, Ca) are promising for oxide electronics, but control of n -type doping has proved challenging. Using first-principles hybrid density functional calculations, we investigate La dopants and explore the formation of compensating acceptor defects. We find that La on the A site always behaves as a shallow donor, but incorporation of La on the Sn site can lead to self-compensation. At low La concentrations and in O-poor conditions, oxygen vacancies form in BaSnO3. A -site cation vacancies are found to be dominant among the native compensating centers. Compared to BaSnO3, charge compensation is a larger problem for the wider-band-gap stannates, SrSnO3 and CaSnO3, a trend we can explain based on conduction-band alignments. The formation of compensating acceptor defects can be inhibited by choosing oxygen-poor (cation-rich) growth or annealing conditions, thus providing a pathway for improved n -type doping.

  6. Air-stable n-type doping of graphene from overlying Si3N4 film

    International Nuclear Information System (INIS)

    Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

    2014-01-01

    In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.

  7. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

    Energy Technology Data Exchange (ETDEWEB)

    Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2013-12-02

    N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

  8. Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

    Science.gov (United States)

    Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

    2018-03-01

    Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Complementary p- and n-type polymer doping for ambient stable graphene inverter.

    Science.gov (United States)

    Yun, Je Moon; Park, Seokhan; Hwang, Young Hwan; Lee, Eui-Sup; Maiti, Uday; Moon, Hanul; Kim, Bo-Hyun; Bae, Byeong-Soo; Kim, Yong-Hyun; Kim, Sang Ouk

    2014-01-28

    Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

  10. Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

    2015-01-05

    Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

  11. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  12. n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    International Nuclear Information System (INIS)

    Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

    2007-01-01

    The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

  13. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

    Directory of Open Access Journals (Sweden)

    Haocheng Sun

    2018-01-01

    Full Text Available Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices. In the experiments, pristine phosphorene shows p-type semiconducting with no exception. To reach its full capability, n-type semiconducting is a necessity. Here, we report the electronic structure engineering of phosphorene by surface metal atom doping. Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene. These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital. Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states. The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity. Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting. Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene. Parallel studies of Li and Na doping support these findings. In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration. It is also interesting that Au can hardly change the work function of phosphorene.

  14. N-type doping effect of single-walled carbon nanotubes with aromatic amines

    Energy Technology Data Exchange (ETDEWEB)

    Koizhaiganova, Raushan B.; Hwang, Doo Hee; Lee, Cheol Jin; Dettlaff-Weglikowska, Urszula [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Roth, Siegmar [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Sineurop Nanotech GmbH, Nobelstreet15, 70569 Stuttgart (Germany)

    2010-12-15

    We investigated the chemical doping of the single-walled carbon nanotubes (SWCNTs) networks by a treatment with aromatic amines. Adsorption and intercalation of amine molecules in bundled SWCNTs leads to typical n-type doping observed already for alkali metals. The electron donation to SWCNTs is demonstrated by the X-ray-induced photoelectron spectra (XPS), where the carbon C 1s peak observed at 284.4 eV for the sp{sup 2} carbon in pristine samples is shifted by up to 0.3 eV to higher binding energy upon chemical treatment. The development of a Breit-Wigner-Fano component on the lower energy side of the G{sup -} mode in the Raman spectrum as well as a shift of the G{sup +} to lower frequency provide evidence for charge accumulation in the nanotube {pi} system, and indication for the n-type doping. The spectroscopic changes are accompanied by the modification of the electrical properties of the SWCNTs. A reduction of conductivity depends on the doping level and implies the decreasing concentration of the charge carriers in the naturally p-doped tubes. Comparing the two selected n-type dopants, the tetramethyl-p-phenylenediamine, shows more pronounced changes in the XPS and the Raman spectra than tetramethylpyrazine, indicating that the sp{sup 3} hybridization of nitrogen in the amine groups attached to phenyl ring is much more effective in interaction with the tube {pi} system than the sp{sup 2} hybridization of nitrogen in the aromatic pyrazine ring. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. N-type doped nano-diamond in a first MEMS application

    Energy Technology Data Exchange (ETDEWEB)

    Dipalo, M.; Kusterer, J.; Janischowsky, K.; Kohn, E. [Dept. of Electron Devices and Circuits, University of Ulm, Albert Einstein Allee 45, 89081 Ulm (Germany)

    2006-09-15

    Nanocrystalline diamond is an interesting material for MEMS applications especially due to its outstanding mechanical, electrical and electrochemical properties. The current choice for doping is boron, resulting in p-type conduction. It has two difficulties: firstly, at high concentration (as needed for full activation) the lattice becomes highly stressed and may degrade the material's quality. Secondly, it contaminates the growth chamber, resulting in a memory effect. A recent alternative is n-type nitrogen doping, avoiding these disadvantages. However, nitrogen is mainly incorporated in the grain boundaries and thus inhomogeneously distributed. In turn this may limit the material's stability. Here we present a first trial to use nitrogen-doped nanocrystalline diamond (NCD), grown by hot filament CVD, in a water microjet as heater element. No stability problems were encountered even at high overdrive power. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  17. Silver antimony Ohmic contacts to moderately doped n-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-21

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

  18. n-Type Doping and Morphology of GaAs Nanowires in Aerotaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sivakumar, Sudhakar [Lund University; Persson, Axel R. [Lund University; Geijselaers, Irene [Lund University; Wallenberg, L. Reine [Lund University; Deppert, Knut [Lund University; Samuelson, Lars [Lund University; Magnusson, Martin [Lund University

    2018-04-17

    Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

  19. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  20. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Kwon, Sung-Joo; Han, Tae-Hee; Kim, Young-Hoon; Ahmed, Towfiq; Seo, Hong-Kyu; Kim, Hobeom; Kim, Dong Jin; Xu, Wentao; Hong, Byung Hee; Zhu, Jian-Xin; Lee, Tae-Woo

    2018-02-07

    n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

  1. Efficiency improvements by Metal Wrap Through technology for n-type Si solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Wenchao, Zhao; Jianming, Wang; Yanlong, Shen; Ziqian, Wang; Yingle, Chen; Shuquan, Tian; Zhiliang, Wan; Bo, Yu; Gaofei, Li; Zhiyan, Hu; Jingfeng, Xiong [Yingli Green Energy Holding Co., Ltd, 3399 North Chaoyang Avenue, Baoding (China); Guillevin, N.; Heurtault, B.; Aken, B.B. van; Bennett, I.J.; Geerligs, L.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    N-type Metal Wrap Through (n-MWT) is presented as an industrially promising back-contact technology to reach high performance of silicon solar cells and modules. It can combine benefits from both n-type base and MWT metallization. In this paper, the efficiency improvements of commercial industrial n-type bifacial Si solar cells (239 cm{sup 2}) and modules (60 cells) by the integration of the MWT technique are described. For the cell, after the optimization of integration, over 0.3% absolute efficiency gain was achieved over the similar non-MWT technology, and Voc gain and Isc gain up to 0.9% and 3.5%, respectively. These gains are mainly attributed to reduced shading loss and surface recombination. Besides the front pattern optimization, a 0.1m{Omega} reduction of Rs in via part will induce further 0.06% absolute efficiency improvement. For the module part, a power output of n-MWT module up to 279W was achieved, corresponding to a module efficiency of about 17.7%.

  2. High power n-type metal-wrap-through cells and modules using industrial processes

    Energy Technology Data Exchange (ETDEWEB)

    Guillevin, N.; Heurtault, B.J.B.; Geerligs, L.J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Jianming, Wang; Ziqian, Wang; Jinye, Zhai; Zhiliang, Wan; Shuquan, Tian; Wenchao, Zhao; Zhiyan, Hu; Gaofei, Li; Bo, Yu; Jingfeng, Xiong [Yingli Green Energy Holding Co.,Ltd. 3399 North Chaoyang Avenue, Baoding (China)

    2013-10-15

    This paper reviews our recent progress in the development of metal wrap through (MWT) cells and modules, produced from n-type Czochralski silicon wafers. The use of n-type silicon as base material allows for high efficiencies: for front emitter-contacted industrial cells, efficiencies above 20% have been reported. N-type MWT (nMWT) cells produced by industrial process technologies allow even higher efficiency due to reduced front metal coverage. Based on the same industrial technology, the efficiency of the bifacial n-MWT cells exceeds the efficiency of the n-type front-and-rear contact and bifacial 'Pasha' technology (n-Pasha) by 0.1-0.2% absolute, with a maximum nMWT efficiency of 20.1% so far. Additionally, full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. In a direct 60-cell module performance comparison, the n-MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter-contacted n-Pasha module. Thanks to reduced resistive losses in copper circuitry on the backfoil compared to traditional tabs, the CTM FF loss of the MWT module was reduced by about 2.2%abs. compared to the tabbed front emitter contact module. A full-size module made using MWT cells of 19.6% average efficiency resulted in a power output close to 280W. Latest results of the development of the n-MWT technology at cell and module level are discussed in this paper, including a recent direct comparison run between n-MWT and n-Pasha cells and results of n-MWT cells from 140{mu}m thin mono-crystalline wafers, with only very slight loss (1% of Isc) for the thin cells. Also reverse characteristics and effects of reverse bias for extended time at cell and module level are reported, where we find a higher tolerance of MWT modules than tabbed front contact modules for hotspots.

  3. P- and N-type implantation doping of GaN with Ca and O

    International Nuclear Information System (INIS)

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

    1996-01-01

    III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

  4. Sigma-1 Receptor Plays a Negative Modulation on N-type Calcium Channel

    Directory of Open Access Journals (Sweden)

    Kang Zhang

    2017-05-01

    Full Text Available The sigma-1 receptor is a 223 amino acids molecular chaperone with a single transmembrane domain. It is resident to eukaryotic mitochondrial-associated endoplasmic reticulum and plasma membranes. By chaperone-mediated interactions with ion channels, G-protein coupled receptors and cell-signaling molecules, the sigma-1 receptor performs broad physiological and pharmacological functions. Despite sigma-1 receptors have been confirmed to regulate various types of ion channels, the relationship between the sigma-1 receptor and N-type Ca2+ channel is still unclear. Considering both sigma-1 receptors and N-type Ca2+ channels are involved in intracellular calcium homeostasis and neurotransmission, we undertake studies to explore the possible interaction between these two proteins. In the experiment, we confirmed the expression of the sigma-1 receptors and the N-type calcium channels in the cholinergic interneurons (ChIs in rat striatum by using single-cell reverse transcription-polymerase chain reaction (scRT-PCR and immunofluorescence staining. N-type Ca2+ currents recorded from ChIs in the brain slice of rat striatum was depressed when sigma-1 receptor agonists (SKF-10047 and Pre-084 were administrated. The inhibition was completely abolished by sigma-1 receptor antagonist (BD-1063. Co-expression of the sigma-1 receptors and the N-type calcium channels in Xenopus oocytes presented a decrease of N-type Ca2+ current amplitude with an increase of sigma-1 receptor expression. SKF-10047 could further depress N-type Ca2+ currents recorded from oocytes. The fluorescence resonance energy transfer (FRET assays and co-immunoprecipitation (Co-IP demonstrated that sigma-1 receptors and N-type Ca2+ channels formed a protein complex when they were co-expressed in HEK-293T (Human Embryonic Kidney -293T cells. Our results revealed that the sigma-1 receptors played a negative modulation on N-type Ca2+ channels. The mechanism for the inhibition of sigma-1 receptors on

  5. N-type doping of InGaN by high energy particle irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yu, K.M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA, 94720 (United States)

    2009-06-15

    This article reviews our extensive studies of the effects of native defects introduced by high energy particles on the electrical and optical properties of InGaN alloys. We show that the electronic properties of irradiated InGaN can be well described by the amphoteric defect model. Because of the extremely low position of the conduction band edge of InN the formation energy of native donor defects is very low in In-rich InGaN alloys. High energy particle irradiation of InN and In-rich InGaN, will therefore produce donor defects and result in more n-type materials. As the irradiation dose increases, the electron concentration increases until the Fermi energy E{sub F} approaches the Fermi stabilization energy E{sub FS}. At this point both donor and acceptor-type defects are formed at similar rates, and compensate each other, leading to stabilization of E{sub F} and a saturation of the electron concentration. Hence a large increase and then saturation in the Burstein-Moss shift of the optical absorption edge is also observed. Furthermore we also found that mobilities in the irradiated films can be well described by scattering from triply charged defects, providing strong evidence that native defects in InN are triple donors. The excellent agreement between the experimental results and predictions based on the ADM suggests that particle irradiation can be an effective and simple method to control the doping (electron concentration) in In-rich In{sub x}Ga{sub 1-x}N via native point defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. N-type doping of InGaN by high energy particle irradiation

    International Nuclear Information System (INIS)

    Yu, K.M.

    2009-01-01

    This article reviews our extensive studies of the effects of native defects introduced by high energy particles on the electrical and optical properties of InGaN alloys. We show that the electronic properties of irradiated InGaN can be well described by the amphoteric defect model. Because of the extremely low position of the conduction band edge of InN the formation energy of native donor defects is very low in In-rich InGaN alloys. High energy particle irradiation of InN and In-rich InGaN, will therefore produce donor defects and result in more n-type materials. As the irradiation dose increases, the electron concentration increases until the Fermi energy E F approaches the Fermi stabilization energy E FS . At this point both donor and acceptor-type defects are formed at similar rates, and compensate each other, leading to stabilization of E F and a saturation of the electron concentration. Hence a large increase and then saturation in the Burstein-Moss shift of the optical absorption edge is also observed. Furthermore we also found that mobilities in the irradiated films can be well described by scattering from triply charged defects, providing strong evidence that native defects in InN are triple donors. The excellent agreement between the experimental results and predictions based on the ADM suggests that particle irradiation can be an effective and simple method to control the doping (electron concentration) in In-rich In x Ga 1-x N via native point defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

    Science.gov (United States)

    Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

    2018-01-01

    This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

  8. Efficient polymer:fullerene bulk heterojunction solar cells with n-type doped titanium oxide as an electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Youna [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Geunjin [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Heejoo, E-mail: heejook@gist.ac.kr [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Sun Hee [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Kwanghee, E-mail: klee@gist.ac.kr [Heeger Center for Advanced Material & Research Institute of Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2015-05-29

    We have reported a highly n-type doped solution-processed titanium metal oxide (TiO{sub x}) for use as an efficient electron-transport layer (ETL) in polymer:fullerene bulk heterojunction (BHJ) solar cells. When the metal ions (Ti) in TiO{sub x} are partially substituted by niobium (Nb), the charge carrier density increased, by an order of magnitude, because of the large electronegativity of Nb compared to that of Ti. Therefore, the work function (WF) of Nb-doped metal oxide (Nb-TiO{sub x}) decreases from 4.75 eV (TiO{sub x}) to 4.66 eV (Nb-TiO{sub x}), leading to an enhancement in the power conversion efficiency (PCE) of BHJ solar cells with a Nb-TiO{sub x} ETL (from 7.99% to 8.40%). - Highlights: • Solution processable Nb-doped TiO{sub x} was developed by simple sol-gel synthesis. • Charge carrier density in TiO{sub x} is significantly increased by introducing Nb element. • The work function value of Nb-doped TiO{sub x} is reduced by introducing Nb element. • A charge recombination inside of PSC with Nb-TiO{sub x} was effectively suppressed.

  9. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  10. Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Kalish, R.; Uzan-Saguy, C.; Baskin, E.; Nesládek, M.; Koizumi, S.

    2003-01-01

    Roč. 199, č. 1 (2003), s. 82-86 ISSN 0031-8965 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z1010914 Keywords : photo-Hall measurements * CVD diamonnd * phosphorus doped Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.950, year: 2003

  11. Widely Applicable n-Type Molecular Doping for Enhanced Photovoltaic Performance of All-Polymer Solar Cells.

    Science.gov (United States)

    Xu, Yalong; Yuan, Jianyu; Sun, Jianxia; Zhang, Yannan; Ling, Xufeng; Wu, Haihua; Zhang, Guobing; Chen, Junmei; Wang, Yongjie; Ma, Wanli

    2018-01-24

    A widely applicable doping design for emerging nonfullerene solar cells would be an efficient strategy in order to further improve device photovoltaic performance. Herein, a family of compound TBAX (TBA= tetrabutylammonium, X = F, Cl, Br, or I, containing Lewis base anions are considered as efficient n-dopants for improving polymer-polymer solar cells (all-PSCs) performance. In all cases, significantly increased fill factor (FF) and slightly increased short-circuit current density (J sc ) are observed, leading to a best PCE of 7.0% for all-PSCs compared to that of 5.8% in undoped devices. The improvement may be attributed to interaction between different anions X - (X = F, Cl, Br, and I) in TBAX with the polymer acceptor. We reveal that adding TBAX at relatively low content does not have a significantly impact on blend morphology, while it can reduce the work function (WF) of the electron acceptor. We find this simple and solution processable n-type doping can efficiently restrain charge recombination in all-polymer solar cell devices, resulting in improved FF and J sc. More importantly, our findings may provide new protocles and insights using n-type molecular dopants in improving the performance of current polymer-polymer solar cells.

  12. Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

    Czech Academy of Sciences Publication Activity Database

    Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-01-01

    Roč. 66, č. 5 (2015), s. 277-281 ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.407, year: 2015

  13. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

    Science.gov (United States)

    Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

    2017-12-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  14. The EVEREST Doping Profile Module. Version 4

    International Nuclear Information System (INIS)

    Ashby, J.; Fowler, R.; Greenough, C.

    1998-01-01

    In this report we describe the EVEREST Doping Module which forms part of the EVEREST suite of programs. The doping module is responsible for generating a neutral file which gives the acceptor and donor densities at each node the device mesh. The neutral file also contains details of the functions used to generate the doping as mesh refinement in the solver requires this. Commands allow the definition of background doping, regions of uniform doping, non-uniform doping relating to windows found in the Geometry neutral file and a user-programmable FORTRAN subroutine which computes doping concentrations as a function of position. The EVEREST suite is one of the products of the ESPRIT project EVEREST (ESPRIT 962E-17, Three-Dimensional Algorithms for a Robust and Efficient Semiconductor Simulator with Parameter Extraction). EVEREST was a four-year project supported by the European Community under the European Strategic Program for Research in Information Technology (ESPRIT) which is investigating suitable algorithms for the analysis of semiconductor devices in three dimensions, and developing software implementing the most effective of those algorithms. The original authors of the Doping Module were G.A. Duffett and M.S. Towers of University College, Swansea. (author)

  15. Understanding the effect of n-type and p-type doping in the channel ...

    Indian Academy of Sciences (India)

    Further, we introduced step-doping profile in the graphene nanoribbon (GNR) channel and found that the ... height of ΦBn = ΦBp = Eg/2. Double gate .... and when the gate voltage is increased, barrier reduces and. Table 2. Ion and .... −6. 7.3 × 10. −6. 3:103, 2:103, 1:103 (0–3, 3–6, 6–9 nm regions). 4.8 × 10. −6. 8.1 × 10. −6.

  16. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    Science.gov (United States)

    Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-09-01

    Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

  17. Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

    2013-01-01

    The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

  18. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

  19. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

    International Nuclear Information System (INIS)

    García-Cervantes, H.; Rodríguez-Vargas, I.

    2014-01-01

    We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n 2DA and n 2DB , and the same well width. The Thomas-Fermi approximation, the semi-empirical sp 3 s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures

  20. Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

    International Nuclear Information System (INIS)

    Alexander, M.

    1992-08-01

    Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

  1. Progress in N-type Si Solar Cell and Module Technology for High Efficiency and Low Cost

    Energy Technology Data Exchange (ETDEWEB)

    Song, Dengyuan; Xiong, Jingfeng; Hu, Zhiyan; Li, Gaofei; Wang, Hongfang; An, Haijiao; Yu, Bo; Grenko, Brian; Borden, Kevin; Sauer, Kenneth; Cui, Jianhua; Wang, Haitao [Yingli Green Energy Holding Co., LTD, 071051 Boading (China); Roessler, T. [Yingli Green Energy Europe GmbH, Heimeranstr. 37, 80339 Munich (Germany); Bultman, J. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Vlooswijk, A.H.G.; Venema, P.R. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands)

    2012-06-15

    A novel high efficiency solar cell and module technology, named PANDA, using crystalline n-type CZ Si wafers has moved into large-scale production at Yingli. The first commercial sales of the PANDA modules commenced in mid 2010. Up to 600MW of mass production capacity from crystal-Si growth, wafer slicing, cell processing and module assembly have been implemented by the end of 2011. The PANDA technology was developed specifically for high efficiency and low cost. In contrast to the existing n-type Si solar cell manufacturing methods in mass production, this new technology is largely compatible with a traditional p-type Si solar cell production line by conventional diffusion, SiNx coating and screen-printing technology. With optimizing all technologies, Yingli's PANDA solar cells on semi-square 6-inch n-type CZ wafers (cell size 239cm{sup 2}) have been improved to currently have an average efficiency on commercial production lines exceeding 19.0% and up to 20.0% in pilot production. The PANDA modules have been produced and were certified according to UL1703, IEC 61215 and IEC 61730 standards. Nearly two years of full production on scale-up lines show that the PANDA modules have a high efficiency and power density, superior high temperature performance, near zero initial light induced degradation, and excellent efficiency at low irradiance.

  2. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  3. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  4. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  5. Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

    Energy Technology Data Exchange (ETDEWEB)

    Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

    1993-01-30

    Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

  6. Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

    Science.gov (United States)

    Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

    2015-06-01

    N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

  7. Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

    Science.gov (United States)

    Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

    2018-06-05

    SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

  8. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  9. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

    Science.gov (United States)

    2010-01-01

    We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

  10. Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Chen Hai-Feng; Guo Li-Xin; Zheng Pu-Yang; Dong Zhao; Zhang Qian

    2015-01-01

    Drain-modulated generation current I DMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of I DMG ascribes to the change of the Si surface potential φ s . This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as V D increases. The reason for this unconformity is that the drain-to-gate voltage V DG lessens φ s around the drain corner and controls the falling edge of the I DMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the I DMG falling edge is set up in which I DMG has an exponential attenuation relation with V DG . Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 mV = 3kT/q. This result fully shows the accuracy of the above mechanism. (paper)

  11. Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

    Directory of Open Access Journals (Sweden)

    Luis Villamagua

    2016-11-01

    Full Text Available We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattice in order to find out the equilibrium configurations and to analyze corresponding density of states (DOS patterns along with the electron localization function (ELF. It has been demonstrated that hydrogen could be solely responsible for the n-type conductivity whereas the oxygen vacancy appears to have not a notable influence upon it. The computational analysis is backed up by some experimental data for undoped tin dioxide.

  12. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

    Science.gov (United States)

    Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

    2014-01-01

    Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

  13. Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

    Science.gov (United States)

    Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

    2018-05-01

    The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

  14. Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1988-01-01

    Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

  15. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.

  16. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    International Nuclear Information System (INIS)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-01-01

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved

  17. Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors

    International Nuclear Information System (INIS)

    Akiyama, T; Briand, D; De Rooij, N F

    2012-01-01

    This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 µm showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was −10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented. (paper)

  18. Physical effects of DCNQI derivatives doping as an N type organic semiconductor in organic photovoltaic cell performance.

    Science.gov (United States)

    Lee, Joo Hyung; Oh, Se Young

    2014-08-01

    In the previous work, we have reported that organic photovoltaic (OPV) cells using DMDCNQI as an n-type second dopant material showed a high power conversion efficiency (PCE). In the present work, we have synthesized a novel DHDCNQI with long alkyl chains to improve the compatibility between the DHDCNQI dopant molecule and host P3HT polymer. We have fabricated OPV cells consisting of ITO/PEDOT:PSS/P3HT:PCBM:DHDCNQI/Al. We have investigated the characteristics of theses OPV cells using DCNQI derivative dopants from the measurements of the incident photon-to-current collection efficiency and photocurrent. The OPV cell using 3 wt% DHDCNQI exhibited a high PCE of 3.29% due to the high charge separation efficiency, good compatibility and low trap site effect.

  19. Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

    International Nuclear Information System (INIS)

    Huang, Lingqin; Wang, Dejun

    2015-01-01

    The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10 18  cm −3 ) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from the thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures

  20. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  1. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

    2017-01-01

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  2. Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

    2015-12-01

    In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

  3. Influence of doped-charge transport layers on the photovoltaic performance of donor-acceptor blend p-i-n type organic solar cells

    Directory of Open Access Journals (Sweden)

    D. Gebeyehu

    2004-06-01

    Full Text Available This report demonstrates external power conversion efficiencies of 2% under 100 mW/cm2 simulated AM1.5 illumination for organic thin-film photovoltaic cells using a phthalocyanine-fullerene (ZnPc/C60 bulk heterojunction as an active layer, embedded into a p-i-n type architecture with doped wide-gap charge transport layers. For an optically optimized device, we found internal quantum efficiency (IQE of above 80% under short circuit conditions. Such optically thin cells with high internal quantum efficiency are an important step towards high efficiency tandem cells. The p-i-n architecture allows for the design of solar cells with high internal quantum efficiency where only the photoactive region absorbs visible light and recombination losses at contacts are avoided. The I-V characteristics, power conversion efficiencies, the dependence of short circuit current on incident white light intensity, incident photon to collected electron efficiency (IPCE and absorption spectra of the active layer system are discussed.

  4. New Insight on Tuning Electrical Transport Properties via Chalcogen Doping in n-type Mg3Sb2-Based Thermoelectric Materials

    DEFF Research Database (Denmark)

    Zhang, Jiawei; Song, Lirong; Borup, Kasper

    2018-01-01

    n-type Mg3Sb1.5Bi0.5 has recently been discovered to be a promising thermoelectric material, yet the effective n-type dopants are mainly limited to the chalcogens. This may be attributed to the limited chemical insight into the effects from different n-type dopants. By comparing the effects of di...

  5. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

    2015-01-01

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  6. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  7. Modulation doping and delta doping of III-V compound semiconductors

    NARCIS (Netherlands)

    Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

    1991-01-01

    The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

  8. Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calz. Solidaridad Esq. Paseo a La Bufa S/N. C.P. 98060 Zacatecas (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516 Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-03-15

    In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N{sub 2d}) of each single δ-doped quantum well are taken to vary within the range of 1.0×10{sup 12} to 7.0×10{sup 12} cm{sup −2}, consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system.

  9. Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

    International Nuclear Information System (INIS)

    Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N 2d ) of each single δ-doped quantum well are taken to vary within the range of 1.0×10 12 to 7.0×10 12 cm −2 , consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system

  10. Fragile X mental retardation protein controls synaptic vesicle exocytosis by modulating N-type calcium channel density

    Science.gov (United States)

    Ferron, Laurent; Nieto-Rostro, Manuela; Cassidy, John S.; Dolphin, Annette C.

    2014-04-01

    Fragile X syndrome (FXS), the most common heritable form of mental retardation, is characterized by synaptic dysfunction. Synaptic transmission depends critically on presynaptic calcium entry via voltage-gated calcium (CaV) channels. Here we show that the functional expression of neuronal N-type CaV channels (CaV2.2) is regulated by fragile X mental retardation protein (FMRP). We find that FMRP knockdown in dorsal root ganglion neurons increases CaV channel density in somata and in presynaptic terminals. We then show that FMRP controls CaV2.2 surface expression by targeting the channels to the proteasome for degradation. The interaction between FMRP and CaV2.2 occurs between the carboxy-terminal domain of FMRP and domains of CaV2.2 known to interact with the neurotransmitter release machinery. Finally, we show that FMRP controls synaptic exocytosis via CaV2.2 channels. Our data indicate that FMRP is a potent regulator of presynaptic activity, and its loss is likely to contribute to synaptic dysfunction in FXS.

  11. Telmisartan as metabolic modulator: a new perspective in sports doping?

    Science.gov (United States)

    Sanchis-Gomar, Fabian; Lippi, Giuseppe

    2012-03-01

    The World Antidoping Agency (WADA) has introduced some changes in the 2012 prohibited list. Among the leading innovations to the rules are that both 5-aminoimidazole-4-carboxamide-1-β-D-ribofuranoside (peroxisome proliferator-activated receptor-δ [PPAR-δ]-5' adenosine monophosphate-activated protein kinase [AMPK] agonist) and GW1516 (PPAR-δ-agonist) are no longer categorized as gene doping substances in the new 2012 prohibited list but as metabolic modulators in the class "Hormone and metabolic modulators." This may also be valid for the angotensin II receptor blocker telmisartan. It has recently been shown that telmisartan might induce similar biochemical, biological, and metabolic changes (e.g., mitochondrial biogenesis and changes in skeletal muscle fiber type) as those reported for the former call of substances. We suspect that metabolic modulators abuse such as telmisartan might become a tangible threat in sports and should be thereby targeted as an important antidoping issue. The 2012 WADA prohibited list does not provide telmisartan for a potential doping drug, but arguments supporting the consideration to include them among "metabolic modulators" are at hand.

  12. Modulation doping of quantum dot laser active area and its impact on lasing performance

    Science.gov (United States)

    Konoplev, S. S.; Savelyev, A. V.; Korenev, V. V.; Maximov, M. V.; Zhukov, A. E.

    2015-11-01

    We present a theoretical study of modulation doping of active region in the quantum dot (QD) laser and corresponding issues of QD charge neutrality violation, a band diagram of the laser and charge carriers distribution in the structure. Modulation doping is discussed as a possible technique to control laser output characteristics. It was shown that modulation doping leads to an increase of threshold current of lasing through excited QD optical transition together with power emission from QD ground state.

  13. Modulation doping of quantum dot laser active area and its impact on lasing performance

    International Nuclear Information System (INIS)

    Konoplev, S S; Savelyev, A V; Korenev, V V; Maximov, M V; Zhukov, A E

    2015-01-01

    We present a theoretical study of modulation doping of active region in the quantum dot (QD) laser and corresponding issues of QD charge neutrality violation, a band diagram of the laser and charge carriers distribution in the structure. Modulation doping is discussed as a possible technique to control laser output characteristics. It was shown that modulation doping leads to an increase of threshold current of lasing through excited QD optical transition together with power emission from QD ground state. (paper)

  14. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  15. Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

    Science.gov (United States)

    Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

    2018-06-01

    In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

  16. Measuring of nonlinearity of dye doped liquid crystals using of self phase modulation effect

    International Nuclear Information System (INIS)

    Abedi, M.; Jafari, A.; Tajalli, H.

    2007-01-01

    Self phase modulation in dye doped liquid crystals has investigated and the nonlinearity of dye doped liquid crystals is measured by this effect. The Self phase modulation effect can be used for producing optical micro rings that have many applications in photonics and laser industries.

  17. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  18. Thermoelectric properties of I-doped n-type Bi2Te3-based material prepared by hydrothermal and subsequent hot pressing

    Directory of Open Access Journals (Sweden)

    Fang Wu

    2017-04-01

    Full Text Available I-doped Bi2Te3−xIx (x=0, 0.05, 0.1, 0.2 flower-like nanoparticles were synthesized by a hydrothermal method through a careful adjustment of the amount of ethylenediamine tetraacetic acid surfactant. The nanopowders of flower-like nanoparticles were hot-pressed into bulk pellets and the thermoelectric properties of the pellets were investigated. The results showed that I-doping decreased the electrical resistivity effectively, and the thermal conductivitives of the Bi2Te3−xIx bulk samples was lower because of the closer atomic mass of I compared to Te. As a result, a ZT value of 1.1 was attained at 448 K for the Bi2Te2.9I0.1 sample.

  19. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, N.D., E-mail: Duy.Nguyen@imec.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Rosseel, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Takeuchi, S. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Physics and Astronomy, KU Leuven, B-3001 Leuven (Belgium); Everaert, J.-L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Yang, L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry and INPAC Institute, KU Leuven, B-3001 Leuven (Belgium); Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, 464-8603 (Japan); Sakai, A. [Department of System Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Loo, R. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, J.C. [TSMC, R and D, 8, Li-Hsin 6th Rd., Hsinchu Science-Based Park, Hsinchu, Taiwan (China); TSMC assignee at IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Instituut voor Kern- en Stralingsfysika - IKS, KU Leuven, B-3001 Leuven (Belgium); Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 {sup o}C, we measured an active dopant concentration of about 2.1 x 10{sup 20} cm{sup -} {sup 3} and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10{sup 13} cm{sup -} {sup 2}) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  20. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    International Nuclear Information System (INIS)

    Nguyen, N.D.; Rosseel, E.; Takeuchi, S.; Everaert, J.-L.; Yang, L.; Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H.; Zaima, S.; Sakai, A.; Loo, R.; Lin, J.C.; Vandervorst, W.; Caymax, M.

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 o C, we measured an active dopant concentration of about 2.1 x 10 20 cm - 3 and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10 13 cm - 2 ) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  1. Design rules for modulation doped AlAs quantum wells

    Science.gov (United States)

    Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Kamburov, D.; Shayegan, M.; Pfeiffer, L. N.

    AlxGa1-xAs/AlAs/AlxGa1-xAs quantum wells were grown with various barrier compositions ranging from x =0.26 to x =0.8. We investigate the modulation doping characteristics of the samples by magneto-transport measurements. The carrier concentration in the well peaks near the barrier alloy fraction of x =0.26 in the dark and near x =0.38 after illumination with a red LED. This behavior is consistent with the results in a separate study for AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells in the range of x =0.26 to x =1.0. We show from a charge transfer model that the calculated energy difference between the conduction band offset at the well interface and the donor energy level, ΔEC-ED, coincides for the two types of wells. This implies that, despite the differing positions of the conduction band minimum for the GaAs and AlAs wells, the doping of either well is governed by the electronic properties of the barrier. Based on this knowledge we designed high quality AlAs quantum wells with low (1 x 1011 cm-2) and high (3 x 1011 cm-2) density, and the magneto-transport data show clear signals of the fractional quantum Hall effect (2/3, 3/5, 4/7 for low density and 5/3, 8/5 for high density). Work supported by the NSF (Grants DMR-1305691, ECCS-1508925, and MRSEC DMR-1420541), the DOE Basic Energy Sciences (Grant DE-FG02-00-ER45841), the Gordon and Betty Moore Foundation (Grant GBMF4420), and the Keck Foundation.

  2. Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

    Energy Technology Data Exchange (ETDEWEB)

    Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal, E-mail: reddy_vrg@rediffmail.com

    2016-07-01

    The Au/Fe-doped ZnO/n-InP metal/interlayer/semiconductor (MIS) Schottky structure is fabricated with Fe-doped ZnO nanostructure (NS) as an interlayer. The field emission scanning electron microscopy and atomic force microscopy results demonstrated that the surface morphology of the Fe−ZnO NS on n-InP is fairly smooth. The x-ray diffraction results reveal that the average grain size of the Fe−ZnO film is 12.35 nm. The electrical properties of the Au/n-InP metal-semiconductor (MS) and Au/Fe−ZnO NS/n-InP MIS Schottky structures are investigated by current-voltage and capacitance-voltage measurements at room temperature. The Au/Fe−ZnO NS/n-InP MIS Schottky structure has good rectifying ratio with low-leakage current compared to the Au/n-InP MS structure. The barrier height obtained for the MIS structure is higher than those of MS Schottky structure because of the modification of the effective barrier height by the Fe−ZnO NS interlayer. Further, the barrier height, ideality factor and series resistance are determined for the MS and MIS Schottky structures using Norde and Cheung's functions and compared to each other. The estimated interface state density of MIS Schottky structure is lower than that of MS Schottky structure. Experimental results revealed that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region whereas Schottky emission is the dominant in the higher bias region for both the Au/n-InP MS and Au/Fe−ZnO NS/n-InP MIS Schottky structures. - Highlights: • Barrier height of Au/n-InP Schottky diode was modified by Fe−ZnO nanostructure interlayer. • MIS structure has a good rectification ratio compared to the MS structure. • The interface state density of MIS structure is lower than that of MS structure. • Poole-Frenkel mechanism is found to dominate in both MS and MIS structure.

  3. In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.

    2000-05-11

    In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

  4. Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Seo, J; Park, K; Lee, C; Kim, J

    1997-07-01

    The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

  5. Charge distribution and response time for a modulation-doped extrinsic infrared detector

    Science.gov (United States)

    Hadek, Victor

    1987-01-01

    The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.

  6. Characterization of the Structural Modulations in n-type Bi{sub 2} (Te{sub 0}.95Se{sub 0}.05){sub 3} Thermoelectric Compound

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sung Ho; Lee, Kap Ho [Chungnam National University, Daejeon (Korea, Republic of); Hong, Soon Jik [Kongju National University, Cheonan (Korea, Republic of)

    2015-02-15

    An n-type Bi{sub 2}Te{sub 3} thermoelectric compound was analyzed by using a high resolution transmission electron microscopy, and was further analyzed by using an image processing unit. A sinusoidal strain contrast of the structural modulations appeared in a multi-beam image and the fringes showed a wavelength of 12 nm with a wave vector parallel to the {101‾ 10} planes. A numerous dislocations were found to glide on to the (0001) plane with a Burgers vector of 1/3<21‾1‾0>-type on the strain field. In order for the elastic strain energy to be relieved, the resultant 1/3<21‾ 1‾0>-type dislocation was thought to be dissociated into two partial dislocations gliding on the {1‾015} planes. The variation in stacking periodicity of the 5-layers lamellar structure with respect to the basal plane of Bi{sub 2}Te{sub 3} was also observed locally. However, this stacking variation is not responsible for the formation of structural modulations. The displacement of the sinusoidal strain field on the structural modulations seems to be generated by dislocation, with presence of dipoles that are about a few nanometers apart. It is understandable that phonons should be scattered throughout the strain field of the structural modulation. Hence, the lattice thermal conductivity is expected to be decreased due to the phonon scattering on sinusoidal strain field of the structural modulations.

  7. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  8. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers

    International Nuclear Information System (INIS)

    Deppe, D G; Freisem, S; Huang, H; Lipson, S

    2005-01-01

    Data are first presented on spontaneous and laser emission of p-doped and undoped quantum dot (QD) heterostructures to characterize the increase in optical gain in p-type modulation doped QD lasers. Because the increase in gain due to p-doping should also increase the differential gain, but does not greatly increase the modulation speed in present p-doped QD lasers, we further examine nonequilibrium electron transport effects in p-doped active material that may still limit the modulation speed. Electron transport through the dot wetting layer caused by the nonlasing QDs of the active ensemble is shown to be capable of substantially reducing the modulation speed, independent of the differential gain. This nonequilibrium limitation can be eliminated by reducing the inhomogeneous broadening in the QD ensemble

  9. Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

    International Nuclear Information System (INIS)

    Ungan, F.

    2011-01-01

    In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.

  10. All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

    Science.gov (United States)

    Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

    2013-05-20

    This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

  11. Refractive index modulation in polymer film doped with diazo Meldrum's acid

    Science.gov (United States)

    Zanutta, Alessio; Villa, Filippo; Bertarelli, Chiara; Bianco, Andrea

    2016-08-01

    Diazo Meldrum's acid undergoes a photoreaction induced by UV light and it is used as photosensitizer in photoresists. Upon photoreaction, a change in refractive index occurs, which makes this system interesting for volume holography. We report on the sublimation effect at room temperature and the effect of photoirradiation on the refractive index in thin films of CAB (Cellulose acetate butyrate) doped with different amount of diazo Meldrum's acid. A net modulation of the refractive index of 0.01 is achieved with 40% of doping ratio together with a reduction of the film thickness.

  12. Correlation between modulation structure and electronic inhomogeneity on Pb-doped Bi-2212 single crystals

    International Nuclear Information System (INIS)

    Sugimoto, A.; Kashiwaya, S.; Eisaki, H.; Yamaguchi, H.; Oka, K.; Kashiwaya, H.; Tsuchiura, H.; Tanaka, Y.

    2005-01-01

    The correlation between nanometer-size electronic states and surface structure is investigated by scanning tunneling microscopy/spectroscopy (STM/S) on Pb-doped Bi 2-x Pb x Sr 2 CaCu2O 8+y (Pb-Bi-2212) single crystals. The advantage of the Pb-Bi-2212 samples is that the modulation structure can be totally or locally suppressed depending on the Pb contents and annealing conditions. The superconducting gap (Δ) distribution on modulated Pb-Bi-2212 samples showed the lack of correlation with modulation structure except a slight reduction of superconducting island size for the b-axis direction. On the other hand, the optimal doped Pb-Bi-2212 (x = 0.6) samples obtained by reduced-annealing showed totally non-modulated structure in topography, however, the spatial distribution of Δ still showed inhomogeneity of which features were quite similar to those of modulated samples. These results suggest that the modulation structure is not the dominant origin of inhomogeneity although it modifies the streaky Δ structure sub-dominantly. From the gap structure variation around the border of narrow gap and broad gap regions, a trend of the coexistence of two separated phases i.e., superconducting phase and pseudogap like phase, is detected

  13. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA

    2017-05-10

    Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

  14. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Science.gov (United States)

    Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

    2009-06-01

    Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

  15. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Science.gov (United States)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

    2017-07-01

    Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

  16. Excitons and trions in modulation doped structures in high magnetic fields

    International Nuclear Information System (INIS)

    Kochereshko, V.; Andronikov, D.; Platonov, A.; Crooker, S.; Barrick, T.; Karczewski, G.; Tronc, P.

    2004-01-01

    Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields. (author)

  17. Intrinsically High Thermoelectric Performance in AgInSe2 n-Type Diamond-Like Compounds.

    Science.gov (United States)

    Qiu, Pengfei; Qin, Yuting; Zhang, Qihao; Li, Ruoxi; Yang, Jiong; Song, Qingfeng; Tang, Yunshan; Bai, Shengqiang; Shi, Xun; Chen, Lidong

    2018-03-01

    Diamond-like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high-performance diamond-like thermoelectric materials are p-type semiconductors. The lack of high-performance n-type diamond-like thermoelectric materials greatly restricts the fabrication of diamond-like material-based modules and their real applications. In this work, it is revealed that n-type AgInSe 2 diamond-like compound has intrinsically high thermoelectric performance with a figure of merit ( zT ) of 1.1 at 900 K, comparable to the best p-type diamond-like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low-frequency Ag-Se "cluster vibrations," as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high-performance n-type AgInSe 2 -based compounds, the diamond-like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond-like thermoelectric materials.

  18. Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires.

    Science.gov (United States)

    Hsu, Cheng-Liang; Lu, Ying-Ching

    2012-09-21

    This study investigates the feasibility of synthesizing high-density transparent Ga(2)O(3)/SnO(2):Ga core-shell nanowires on a sapphire substrate at 1000 °C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga(2)O(3) and SnO(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO(2) and Ga(2)O(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga(2)O(3)/SnO(2):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga(2)O(3) region functions similar to a capacitor and continues to accumulate SnO(2):Ga excited electrons under UV light exposure.

  19. Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

    Science.gov (United States)

    Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

    The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

  20. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao

    2016-01-01

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  1. Mobility modulation in inverted delta doped coupled double quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, N. [Department of Electronic Science, Berhampur University, 760007, Odisha (India); Sahu, T., E-mail: tsahu_bu@rediffmail.com [Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761008, Odisha (India)

    2016-10-01

    We have studied the modulation of electron mobility μ as a function of the electric field perpendicular to the interface plane F{sub p} in a GaAs/AlGaAs double quantum well structure near the resonance of subband states. The functional dependence of μ on F{sub p} exhibits a minimum near the anticrossing of subband states leading to an oscillatory behavior of μ. We show that the oscillatory enhancement of μ becomes more pronounced with increase in the difference between the doping concentrations in the side barriers. The oscillation of μ also increases by varying the widths of the two wells through shifting of the position of the middle barrier. It is interesting to show that the oscillation of μ is always larger when there is doping in barrier towards the substrate side compared to that of the surface side due to the difference in the influence of the interface roughness scattering potential. Further, broadening of the central barrier width increases the peaks of the oscillation of μ mostly due to the changes in the ionized impurity scattering potential. Our results can be utilized for the performance enhancement of quantum well field effect transistor devices.

  2. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  3. Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Tien, Nguyen Thanh, E-mail: nttien@ctu.edu.vn; Thao, Pham Thi Bich [College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City (Viet Nam); Thao, Dinh Nhu [Center for Theoretical and Computational Physics, College of Education, Hue University, 34 Le Loi Street, Hue City (Viet Nam); Quang, Doan Nhat [Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi (Viet Nam)

    2016-06-07

    We present a study of the lateral transport of a two-dimensional electron gas (2DEG) in a modulation-doped polar heterojunction (HJ). In contrast to previous studies, we assume that the Coulomb correlation among ionized impurities and among charged dislocations in the HJ is so strong that the 2DEG low-temperature mobility is not limited by impurity and dislocation scattering. The mobility, however, is specified by alloy disorder scattering and combined roughness scattering, which is the total effect induced by both the potential barrier and polarization roughness. The obtained results show that the alloy disorder and combined roughness scattering strongly depend on the alloy content and on the near-interface electron distribution. Our theory is capable of explaining the bell-shaped dependence of the lateral mobility on alloy content observed in AlGaN/GaN and on 2DEG density observed in AlN/GaN, which have not previously been explained.

  4. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  5. Simulation design of P–I–N-type all-perovskite solar cells with high efficiency

    International Nuclear Information System (INIS)

    Du Hui-Jing; Wang Wei-Chao; Gu Yi-Fan

    2017-01-01

    According to the good charge transporting property of perovskite, we design and simulate a p–i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite charge transporting layers and the perovskite absorber constitute the all-perovskite cell. By modulating the cell parameters, such as layer thickness values, doping concentrations and energy bands of n-, i-, and p-type perovskite layers, the all-perovskite solar cell obtains a high power conversion efficiency of 25.84%. The band matched cell shows appreciably improved performance with widen absorption spectrum and lowered recombination rate, so weobtain a high J sc of 32.47 mA/cm 2 . The small series resistance of the all-perovskite solar cell also benefits the high J sc . The simulation provides a novel thought of designing perovskite solar cells with simple producing process, low production cost and high efficient structure to solve the energy problem. (paper)

  6. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, ...... of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3....

  7. Chirp-free direct modulation of 550 nm emission in Er3+ -Doped Fluoroindate glass by nonlinear feedback control

    Science.gov (United States)

    Cai, Runyu; Thitsa, Makhin; Bluiett, Althea; Brown, Ei; Hommerich, Uwe

    2017-06-01

    We propose a direct modulation method with nonlinear feedback controller which can produce chirp-free modulation of the output pulse without bulky external modulators. This work reports the design of the controller which, via a feedback loop, varies and controls the pump rate in real time by automatically adjusting the pump power to precisely modulate the emission of 550 nm in Er3+ -doped Fluoroindate glass under 1.48 μm pumping. In this interdisciplinary paper, well established theoretical tools from nonlinear control theory are applied to the dynamical system of the laser material in order to produce the desired output of the laser. The controller is simulated in MATLAB Simulink and the simulation results show that our technique yields precise modulation of the output intensity without frequency chirping. Results on both theoretical analysis of the control methodology and simulation are presented.

  8. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Science.gov (United States)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  9. Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-10-09

    The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

  10. Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

    Science.gov (United States)

    Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

    2018-03-14

    Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

  11. N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

    KAUST Repository

    Zhitomirsky, David

    2012-09-12

    N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  13. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander

    2016-10-07

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  14. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan-Tiberiu; Inal, Sahika; Donahue, Mary; Niazi, Muhammad Rizwan; Hanifi, David A.; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

    2016-01-01

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  15. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  16. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-12-01

    Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  17. Synthesis of Nickel (Ni) Doped HKUST-1 Using Solvotermal Method with Addition of Acetic Acid as Modulator

    OpenAIRE

    Safii, Farhan Fikri; Ediati, Ratna

    2015-01-01

    Hong Kong University of Science and Technology-1 (HKUST-1) is metal organic framework (MOF) that composed from ligand BTC (1,3,5-benzene tricarboxylic) and copper ions. The method used in this study is solvotermal with variations nickel ion doping and additions acetic acid as modulator. The purpose of this study is to increase the hydrogen storage capacity. The results obtained were characterized by XRD showed that the HKUST-1 and Ni-HKUST-1 has formed, showed by peaks at 2 theta = 6.7, 9.5, ...

  18. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    OpenAIRE

    K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

  19. Chemical-free n-type and p-type multilayer-graphene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  20. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

    2017-09-01

    The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

  1. The degrees of tri-axial orientation in RE-doped Bi2212 powders aligned in a modulated rotation magnetic field

    International Nuclear Information System (INIS)

    Nagai, R.; Horii, S.; Maeda, T.; Haruta, M.; Shimoyama, J.

    2013-01-01

    Highlights: •Tri-axial magnetic alignment of Bi2212 with rare-earth (RE) doping was attempted. •Magnetization axes depended on the type of doped RE ions. •RE-doping increased degrees of inplane orientation and inplane magnetic anisotropy. -- Abstract: We report relationship between the degrees of tri-axial orientation and doping level of rare earth (RE) ions in Bi 2 Sr 2 (Ca 1−x RE x )Cu 2 O y (RE-doped Bi2212; RE = Dy, Ho, Er and Tm) powder samples aligned under a modulated rotation magnetic field (MRF) of 10 T. Tri-axial magnetic alignment of the RE-doped Bi2212 with x = 0–0.5 was achieved by single-ion magnetic anisotropy of RE 3+ and tri-axial magnetic anisotropy induced by modulation microstructure in a grain level. The degrees of in-plane and c-axis orientation with ∼3° were achieved for the case of the Tm-doped Bi2212 with x = 0.5. The findings in the present study give us important information for the fabrication of triaxially oriented Bi-based cuprate superconductor materials by the magneto-scientific process

  2. Modulations of anisotropic optical transmission on alumina-doped zinc oxide surface by femtosecond laser induced ripples

    Science.gov (United States)

    Lu, Yanhui; Jiang, Lan; Sun, Jingya; Cao, Qiang; Wang, Qingsong; Han, Weina; Lu, Yongfeng

    2018-04-01

    This study demonstrated that femtosecond-laser-induced ripples on an alumina-doped zinc oxide (AZO) film with space intervals of approximately 340 and 660 nm exhibit modulations of anisotropic optical transmission. At low laser fluence, ripples can not affect the original absorption peak of AZO film, but at higher laser fluence, the absorption peak of AZO film is disappeared due to the modulation by femtosecond laser induced ripples. Moreover, the relationship between the anisotropic optical transmission and the features of nanostructures is discussed. Ripples with a space interval of approximately 660 nm have a higher ability to block light than nanostructures with a space interval of approximately 340 nm. These observations indicate that anisotropic optical transmission has potential applications in the field of optoelectronics.

  3. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  4. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  5. Doping front migration in intrinsically conductive polymers and its electrochemical modulation by a separate electrode

    International Nuclear Information System (INIS)

    Rahmanian, Afsaneh; Knoll, Meinhard

    2012-01-01

    Highlights: ► We modify the doping front migration process. ► The migration velocity is controlled by a separate electrode. ► The process may be used in “best use before” labels. - Abstract: We demonstrate a new method of modifying the doping front migration process in multilayer structures, enabling the control of migration velocity. The presence of two interfaces in contact with the migration layer strongly affects the migration mechanism. Electrochemical switching of an electrode at one interface may be used to control the chemical doping front migration at the second interface. The process may be used to produce ultralow-cost devices acting as electronic “best use before” labels on food and drink or “use-by” labels on drugs. Control of the migration velocity may be used as a method for weighting storage conditions (i.e. opening of a package during the measurement period increases the migration velocity).

  6. Industrial n-type solar cells with >20% cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

  7. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  8. Ion-doping as a strategy to modulate hydroxyapatite nanoparticle internalization

    Science.gov (United States)

    Zhao, Z.; Espanol, M.; Guillem-Marti, J.; Kempf, D.; Diez-Escudero, A.; Ginebra, M.-P.

    2016-01-01

    Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co-addition. We synthesized NPs under similar conditions to allow comparison of results and different aspects in addition to assessing the effect of the doping ion(s) were investigated: (1) the effect of performing the cell culture study on citrate-dispersed NPs and on agglomerated NPs, (2) the effect of adding/excluding 10% of foetal bovine serum (FBS) in the cell culture media and (3) the type of cell, i.e. MG-63 versus rat mesenchymal stem cells (rMSCs). The results clearly demonstrated that Mg-doping had a major effect on MG-63 cells with high cytotoxicity but not to rMSCs. This was a very important finding because it proved that doping could be a tool to modify NP internalization. The results also suggest that NP surface charge had a large impact on MG-63 cells and prevents their internalization if it is too negative--this effect was less critical for rMSCs.Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co

  9. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Technology and Physics of MBE. Plenum, New York. (1985) p.38 5. Shawn D. Burnham, Improved Understanding And Control Of Magnesium -Doped Gallium Nitride By...range in order to minimize Mg self-compensation or other kind of defects. The other straightforward method is to increase the magnesium concentration...tested using NaOH etching 22. The surface is resistant to the etching indicating that no polarity inversion occurs during the growth, even though Mg

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  12. Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

    Science.gov (United States)

    Anghel, S.; Passmann, F.; Singh, A.; Ruppert, C.; Poshakinskiy, A. V.; Tarasenko, S. A.; Moore, J. N.; Yusa, G.; Mano, T.; Noda, T.; Li, X.; Bristow, A. D.; Betz, M.

    2018-03-01

    Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λSOI is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λSOI through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λSOI and diffusion coefficient.

  13. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Science.gov (United States)

    Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

    2018-04-01

    In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

  14. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    International Nuclear Information System (INIS)

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-01-01

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  15. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  16. Rational hybrid modulation of P, N dual-doped holey graphene for high-performance supercapacitors

    Science.gov (United States)

    Nazarian-Samani, Masoud; Haghighat-Shishavan, Safa; Nazarian-Samani, Mahboobeh; Kim, Myeong-Seong; Cho, Byung-Won; Oh, Si-Hyoung; Kashani-Bozorg, Seyed Farshid; Kim, Kwang-Bum

    2017-12-01

    A P, N dual-doped holey graphene (PNHG) material is prepared by a scalable, facile synthetic approach, using a mixture of glucose, dicyandiamide (DCDA), and phosphoric acid (H3PO4). H3PO4 successfully functions as an "acid catalyst" to encourage the uniform breakage of C=C bonds to create large, localized perforations over the graphene monolith. Further acid treatment and annealing introduce in-plane holes. The correlation between the capacitance of the PNHG and its structural parameters during the fabrication process is comprehensively evaluated. A thermally induced sp2→sp3 transformation occurs at high temperatures because of the substantial loss of graphitic sp2-type carbons, together with a dramatic reduction in capacitance. The target PNHG-400 electrode material delivers exceptionally high gravimetric capacitance (235.5 F g-1 at 0.5 A g-1), remarkable rate capability (84.8% at 70 A g-1), superior capacitance retention (93.2 and 92.7% at 10 and 50 A g-1 over 25000 cycles, respectively), and acceptable volumetric capacitance due to moderate density, when it is used with organic electrolytes in the voltage range between 0 and 3 V. These results suggest a pioneering defect-engineered strategy to fabricate dual-doped holey graphene with valuable structural properties for high-performance electric double layer supercapacitors, which could be used in next-generation energy storage applications.

  17. Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

    2017-12-01

    Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

  18. Trench process and structure for backside contact solar cells with polysilicon doped regions

    Science.gov (United States)

    De Ceuster, Denis; Cousins, Peter John; Smith, David D.

    2010-12-14

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  19. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

    International Nuclear Information System (INIS)

    DelAlamo, J.A.

    1989-01-01

    A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

  20. Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

    Science.gov (United States)

    Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

    2016-10-26

    Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

  1. N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

    Energy Technology Data Exchange (ETDEWEB)

    Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2008-08-30

    In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

  2. type doping in the channel of graphene nanoribbon

    Indian Academy of Sciences (India)

    type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...

  3. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  4. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  5. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

    Science.gov (United States)

    Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

    2011-05-11

    Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

  6. Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material

    Science.gov (United States)

    Yu, Jiabing; Sun, Qiang

    2018-01-01

    Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

  7. Modulating indium doped tin oxide electrode properties for laccase electron transfer enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Diaconu, Mirela [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Chira, Ana [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania); Radu, Lucian, E-mail: gl_radu@chim.upb.ro [Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania)

    2014-08-28

    Indium doped tin oxide (ITO) electrodes were functionalized with gold nanoparticles (GNPs) and cysteamine monolayer to enhance the heterogeneous electron transfer process of laccase from Trametes versicolor. The assembly of GNP on ITO support was performed through generation of H{sup +} species at the electrode surface by hydroquinone electrooxidation at 0.9 V vs Ag/AgCl. Uniform distribution of gold nanoparticle aggregates on electrode surfaces was confirmed by atomic force microscopy. The size of GNP aggregates was in the range of 200–500 nm. The enhanced charge transfer at the GNP functionalized ITO electrodes was observed by cyclic voltammetry (CV) and electrochemical impedance spectroscopy. Electrocatalytic behavior of laccase immobilized on ITO modified electrode toward oxygen reduction reaction was evaluated using CV in the presence of 2,2′-azino-bis 3-ethylbenzothiazoline-6-sulfuric acid (ABTS). The obtained sigmoidal-shaped voltammograms for ABTS reduction in oxygen saturated buffer solution are characteristic for a catalytic process. The intensity of catalytic current increased linearly with mediator concentration up to 6.2 × 10{sup −4} M. The registered voltammogram in the absence of ABTS mediator clearly showed a significant faradaic current which is the evidence of the interfacial oxygen reduction. - Highlights: • Assembly of gold nanoparticles on indium tin oxide support at positive potentials • Electrochemical and morphological evaluation of the gold nanoparticle layer assembly • Bioelectrocatalytic oxygen reduction on laccase modified electrode.

  8. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    International Nuclear Information System (INIS)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

  9. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

    1995-12-31

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

  10. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Manzo, Michele; Gallo, Katia, E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2016-03-21

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  11. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  12. A light-driven modulation of electric conductance through the adsorption of azobenzene onto silicon-doped- and pyridine-like N3-vacancy graphene.

    Science.gov (United States)

    Zhao, Jun; Liu, Chunyan; Ma, Jing

    2017-12-14

    The ability to modulate the conductance of an electronic device under light irradiation is crucial to the practical applications of nanoscale electronics. Density functional theory calculations predict that the conductance of the photo-responsive graphene-based nanocomposites can be tuned through the noncovalent adsorption of an azobenzene (AB) derivative onto pristine, Si-doped, and pyridine-like N 3 -vacancy graphene. AB@graphene systems were found to exhibit a visible-light response within the low-frequency region, rendering the trans-to-cis isomerizations of these nanocomposites under the irradiation of solar light. The excellent solar light absorption performances of these hybrids can then be used to modulate the conductance of both N 3 -vacancy- and Si-doped-graphene AB hybrids effectively through the reversible change of the effective conjugate length of the AB molecule in the photoisomerization. In addition, the solar thermal energy up to 1.53 eV per AB molecule can be stored in the designed nanocomposites with the doped graphene. These findings provide clues for making multifunctional materials with potential applications as both optically controlled nanoelectronics and solar energy storage devices.

  13. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    Energy Technology Data Exchange (ETDEWEB)

    Hertz, Joshua L. [Univ. of Delaware, Newark, DE (United States); Prasad, Ajay K. [Univ. of Delaware, Newark, DE (United States)

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  14. Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

    Directory of Open Access Journals (Sweden)

    Amann Andreas

    2011-01-01

    Full Text Available Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.

  15. Determination of carrier diffusion length in p- and n-type GaN

    Science.gov (United States)

    Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

    2014-03-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

  16. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter

    2008-06-23

    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  17. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    Directory of Open Access Journals (Sweden)

    I. E. Paulauskas

    2011-01-01

    Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

  18. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    Science.gov (United States)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  19. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

    2014-11-15

    Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

  20. Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion

    Science.gov (United States)

    Iguchi, Yuki; Sugiyama, Taiki; Inoue, Kazutoshi; Yanagi, Hiroshi

    2018-05-01

    Tin monosulfide (SnS) is an attractive material for photovoltaic cells because of its suitable band-gap energy, high absorption coefficient, and non-toxic and abundant constituent elements. The primary drawback of this material is the lack of n-type SnS. We recently demonstrated n-type SnS by doping with Cl. However, the Cl-doped n-type SnS bulk ceramics exhibited an odd behavior in which carrier-type conversion but not electron carrier concentration depended on the Cl concentration. In this study, the electron probe microanalysis (EPMA) elemental mapping of Cl-doped SnS revealed continuous homogeneous regions with a relatively low Cl concentration along with the islands of high Cl concentration in which Sn/S is far from unity. The difference between the Cl concentration in the homogeneous region (determined by EPMA) and the bulk Cl concentration (determined by wavelength-dispersive X-ray fluorescence spectroscopy) increased with the increasing Cl doping amount. The carrier concentration and the Hall coefficient clearly depended on the Cl concentration in the homogeneous region. Carrier-type conversion was observed at the Cl concentration of 0.26 at. % (in the homogeneous region).

  1. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.

    2013-11-07

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

  2. New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

    OpenAIRE

    Steyer, Michael; Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara

    2015-01-01

    The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter,...

  3. Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures

    DEFF Research Database (Denmark)

    Thirstrup, C.

    1992-01-01

    A novel electro-optical phase modulator working at 1.55 µm is analyzed and proposed. It is shown by a numerical model that in a GaInAs/InP pn-nin-pn multiple-quantum-well waveguide structure, large optical phase modulation can be obtained at small intensity modulation and with improved performance...

  4. Identification of selected in vitro generated phase-I metabolites of the steroidal selective androgen receptor modulator MK-0773 for doping control purposes.

    Science.gov (United States)

    Lagojda, Andreas; Kuehne, Dirk; Krug, Oliver; Thomas, Andreas; Wigger, Tina; Karst, Uwe; Schänzer, Wilhelm; Thevis, Mario

    2016-01-01

    Research into developing anabolic agents for various therapeutic purposes has been pursued for decades. As the clinical utility of anabolic-androgenic steroids has been found to be limited because of their lack of tissue selectivity and associated off-target effects, alternative drug entities have been designed and are commonly referred to as selective androgen receptor modulators (SARMs). While most of these SARMs are of nonsteroidal structure, the drug candidate MK-0773 comprises a 4-aza-steroidal nucleus. Besides the intended therapeutic use, SARMs have been found to be illicitly distributed and misused as doping agents in sport, necessitating frequently updated doping control analytical assays. As steroidal compounds reportedly undergo considerable metabolic transformations, the phase-I metabolism of MK-0773 was simulated using human liver microsomal (HLM) preparations and electrochemical conversion. Subsequently, major metabolic products were identified and characterized employing liquid chromatography-high-resolution/high- accuracy tandem mass spectrometry with electrospray (ESI) and atmospheric pressure chemical ionization (APCI) as well as nuclear magnetic resonance (NMR) spectroscopy. MK-0773 produced numerous phase-I metabolites under the chosen in vitro incubation reactions, mostly resulting from mono- and bisoxygenation of the steroid. HLM yielded at least 10 monooxygenated species, while electrochemistry-based experiments resulted predominantly in three monohydroxylated metabolites. Elemental composition data and product ion mass spectra were generated for these analytes, ESI/APCI measurements corroborated the formation of at least two N-oxygenated metabolites, and NMR data obtained from electrochemistry-derived products supported structures suggested for three monohydroxylated compounds. Hereby, the hydroxylation of the A-ring located N- bound methyl group was found to be of particular intensity. In the absence of controlled elimination studies, the

  5. The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

    Science.gov (United States)

    Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

    2018-02-01

    Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

  6. Some aspects of hydrogen plasma treatment of anti-modulation doped near surface GaAs/AlGaAs single quantum well structures

    International Nuclear Information System (INIS)

    Bumai, Yu.A.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Nakov, V.; Cheng, T.S.

    1999-01-01

    The MBE grown anti-modulation doped GaAs/AlGaAs structures with near surface single quantum wells were exposed to a DC hydrogen plasma (∼400 eV) and investigated using PL, PLE and PR spectroscopy at 5 K. Strong acceptor related free to bound transition (FB) dominates for quantum well related PL but excitonic features are still observed in PLE spectra. After hydrogen plasma treatment the PL intensity of FB transition from quantum well was strongly increased for above AlGaAs band gap excitation and was unchanged for below AlGaAs one. These results are consistent with atomic hydrogen passivation of deep defects in AlGaAs barriers. At the same time radiative excitonic recombination was quenched by hydrogenation. PLE and PR spectra indicate on a strong increase of electric field in subsurface region of the structure after hydrogenation. The increase of electric field in anti-modulation doped structure after hydrogen plasma treatment is supposed to be due to passivation by atomic hydrogen of surface states that leads to unpinning of Fermi level from mid gap to carbon acceptor level position in GaAs cap layer. It causes the further band bending and surface electric field increase that strongly suppress excitonic recombination in near surface quantum wells

  7. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  8. Attempting to realize n-type BiCuSeO

    Science.gov (United States)

    Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

    2018-02-01

    As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

  9. Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kociniewski, T.; Remeš, Zdeněk; Mer, C.; Nesládek, Miloš; Habka, N.; Barjon, J.; Jomard, F.; Chevallier, J.; Omnès, F.; Tromson, D.; Bergonzo, P.

    2009-01-01

    Roč. 18, 5-8 (2009), s. 827-830 ISSN 0925-9635 Institutional research plan: CEZ:AV0Z10100521 Keywords : AMFTPS * DBP * boron doped diamond * passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.822, year: 2009

  10. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  11. A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

    Science.gov (United States)

    Kim, Seonyeong; Shin, Somyeong; Kim, Taekwang; Du, Hyewon; Song, Minho; Kim, Ki Soo; Cho, Seungmin; Lee, Sang Wook; Seo, Sunae

    2017-04-01

    The modulation of charge carrier concentration allows us to tune the Fermi level (E F) of graphene thanks to the low electronic density of states near the E F. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed E F-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The E F modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.

  12. Modulating optical rectification, second and third harmonic generation of doped quantum dots: Interplay between hydrostatic pressure, temperature and noise

    Science.gov (United States)

    Ganguly, Jayanta; Saha, Surajit; Bera, Aindrila; Ghosh, Manas

    2016-10-01

    We examine the profiles of optical rectification (OR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped QDs under the combined influence of hydrostatic pressure (HP) and temperature (T) in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In order to study the above nonlinear optical (NLO) properties the doped dot has been subjected to a polarized monochromatic electromagnetic field. Effect of application of noise is nicely reflected through alteration of peak shift (blue/red) and variation of peak height (increase/decrease) of above NLO properties as temperature and pressure are varied. All such changes again sensitively depends on mode of application (additive/multiplicative) of noise. The remarkable influence of interplay between noise strength and its mode of application on the said profiles has also been addressed. The findings illuminate fascinating role played by noise in tuning above NLO properties of doped QD system under the active presence of both hydrostatic pressure and temperature.

  13. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    International Nuclear Information System (INIS)

    Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

    2016-01-01

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

  14. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

    Science.gov (United States)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

    2016-01-08

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  15. Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

    Science.gov (United States)

    Mui, D. S. L.; Patil, M. B.; Morkoc, H.

    1989-01-01

    Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

  16. Dielectric passivation schemes for high efficiency n-type c-si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saynova, D.S.; Romijn, I.G.; Cesar, I.; Lamers, M.W.P.E.; Gutjahr, A. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Dingemans, G. [ASM, Kapeldreef 75, B-3001 Leuven (Belgium); Knoops, H.C.M.; Van de Loo, B.W.H.; Kessels, W.M.M. [Eindhoven University of Technology, Department of Appl. Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Siarheyeva, O.; Granneman, E. [Levitech BV, Versterkerstraat 10, 1322AP Almere (Netherlands); Venema, P.R.; Vlooswijk, A.H.G. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands); Gautero, L.; Borsa, D.M.

    2013-10-15

    We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p{sup ++}-emitters and phosphorous doped n{sup +}-BSFs which are relevant for competitive n-type cell conversion efficiencies. The applied passivation schemes are associated with specific properties at c-Si/dielectric interface and functional mechanisms. In this way we aim to gain a deeper understanding of the passivation mechanism of the differently doped fields within the n-type cells and identify options to further improve the efficiency. The deposition technologies in our study comprise industrial PECVD systems and/or ALD both in industrial and lab scale configurations. In case of p{sup ++}-emitters the best results were achieved by combining field effect and chemical passivation using stacks of low temperature wet chemical oxide and thin ALD-AlOx capped with PECVD-SiNx. The corresponding Implied Voc values were of about (673{+-}2) mV and J{sub 0} of (68{+-}2) fA/cm{sup 2}. For the n{sup +}-BSF passivation the passivation scheme based on SiOx with or without additional AlOx film deposited by a lab scale temporal ALD processes and capped with PECVD-SiNx layer yielded a comparable Implied Voc of (673{+-}2) mV, but then corresponding to J{sub 0} value of (80{+-}15) fA/cm{sup 2}. This passivation scheme is mainly based on the chemical passivation and was also suitable for p{sup ++} surface. This means that we have demonstrated that for n-Pasha cells both the emitter and BSF can be passivated with the same type of passivation that should lead to > 20% cell efficiency. This offers the possibility for transfer this passivation scheme to advanced cell architectures, such as IBC.

  17. Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

    CERN Document Server

    Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

    2002-01-01

    The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

  18. Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

    International Nuclear Information System (INIS)

    Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

    1990-01-01

    The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

  19. Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Sarcan, F.; Nutku, F.; Donmez, O.; Kuruoglu, F.; Mutlu, S.; Erol, A.; Yildirim, S.; Arikan, M. C.

    2015-08-01

    We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B  magnetoresistance traces are used to extract the spin coherence, phase coherence and elastic scattering times as well Rashba parameters and spin-splitting energy. The calculated Rashba parameters for nitrogen containing samples reveal that the nitrogen composition is a significant parameter to determine the degree of the spin-orbit interactions. Consequently, GaInNAs-based QW structures with various nitrogen compositions can be beneficial to adjust the spin-orbit coupling strength and may be used as a candidate for spintronics applications.

  20. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Noise-modulated self-polarization effect of impurity doped quantum dots under simultaneous presence of hydrostatic pressure and temperature

    Science.gov (United States)

    Bera, Aindrila; Ghosh, Manas

    2017-10-01

    We explore the profiles of self-polarization effect (SPE) of doped GaAs QD under simultaneous presence of hydrostatic pressure (HP), temperature and in presence of noise. Noise term carries Gaussian white character and it has been administered to the system via two different pathways; additive and multiplicative. Profiles of SPE have been monitored as a function of HP, temperature and noise strength. Under a given condition of HP and temperature, noise marks its prominent signature on the SPE profile. However, the extent to which noise affects the SPE profile visibly depends on the noise strength and the pathway through which noise is introduced. As interesting observations we have found that SPE exhibits minimization at a pressure of ∼ 170 kbar in absence of noise and at ∼ 150 kbar when noise is present. Furthermore, in presence of multiplicative noise SPE exhibits a very faint decrease with increase in T up to T ∼ 420 K. However, beyond T ∼ 420 K, further increase in temperature causes abrupt fall of SPE in a highly sharp way. The findings highlight viable ways of tuning SPE of doped QD system through subtle interplay between HP, temperature and noise.

  3. Air-stable n-type colloidal quantum dot solids

    KAUST Repository

    Ning, Zhijun; Voznyy, Oleksandr; Pan, Jun; Hoogland, Sjoerd H.; Adinolfi, Valerio; Xu, Jixian; Li, Min; Kirmani, Ahmad R.; Sun, Jonpaul; Minor, James C.; Kemp, Kyle W.; Dong, Haopeng; Rollny, Lisa R.; Labelle, André J.; Carey, Graham H.; Sutherland, Brandon R.; Hill, Ian G.; Amassian, Aram; Liu, Huan; Tang, Jiang; Bakr, Osman; Sargent, E. H.

    2014-01-01

    Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

  4. Air-stable n-type colloidal quantum dot solids

    KAUST Repository

    Ning, Zhijun

    2014-06-08

    Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

  5. Modulation of the acidity of niobic acid by ion-doping: Effects of nature and amount of the dopant ions

    Energy Technology Data Exchange (ETDEWEB)

    Carniti, Paolo [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Gervasini, Antonella, E-mail: antonella.gervasini@unimi.it [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Marzo, Matteo [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Auroux, Aline [Université Lyon 1, CNRS, UMR 5256, (IRCELYON), Villeurbanne (France)

    2013-09-10

    Highlights: ► Mitigation of the surface acidity of niobic acid was pursued by K-, Ba-, and Nd-doping. ► Thermal techniques of study were effective for the acidity study. ► The nature of the dopant influences the effectiveness of the acidity tuning of niobic acid. ► The acidity of the doped surfaces decreased with increasing the dopant species added to niobic acid. ► The samples showed different acidity when measured in gas–solid phase (intrinsic acidity) and water (effective acidity). - Abstract: The acidity of niobic acid (NBO) has been successfully mitigated and tuned by addition of K{sup +}, Ba{sup 2+} and Nd{sup 3+} dopant species in amounts from 1 to 15 atom nm{sup −2}. The characterization of the intrinsic acid properties of the samples was performed by adsorption of NH{sub 3} in a volumetric–microcalorimetric coupled line and by temperature programmed desorption (TPD) of 2-phenylethylamine in a thermogravimetric apparatus. The K-dopant was more effective in decreasing the acidity of niobic acid than the Ba- and Nd-dopants. Complementary measurements of the effective acidity of the samples in water by base titrations with 2-phenylethylamine completed the study and revealed a different picture of the effect of the three dopants on the NBO acidity in water. All the results indicated that the K-dopant targeted more selectively the Brønsted acid sites, acting as an ion-exchanger, while Ba- and Nd-species predominantly acted on the Lewis acid sites of the NBO surface.

  6. Doping of III-nitride materials

    OpenAIRE

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  7. n-Type Azaacenes Containing B←N Units.

    Science.gov (United States)

    Min, Yang; Dou, Chuandong; Tian, Hongkun; Geng, Yanhou; Liu, Jun; Wang, Lixiang

    2018-02-12

    We disclose a novel strategy to design n-type acenes through the introduction of boron-nitrogen coordination bonds (B←N). We synthesized two azaacenes composed of two B←N units and six/eight linearly annelated rings. The B←N unit significantly perturbed the electronic structures of the azaacenes: Unique LUMOs delocalized over the entire acene skeletons and decreased aromaticity of the B←N-adjacent rings. Most importantly, these B←N-containing azaacenes exhibited low-lying LUMO energy levels and high electron affinities, thus leading to n-type character. The solution-processed organic field-effect transistor based on one such azaacene exhibited unipolar n-type characteristics with an electron mobility of 0.21 cm 2  V -1  s -1 . © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    Science.gov (United States)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

  9. Progress in low-cost n-type silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Geerligs, L.J.; Romijn, G.; Burgers, A.R.; Guillevin, N.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, Petten (Netherlands); Wang, Hongfang; Lang, Fang; Zhao, Wenchao; Li, Gaofei; Hu, Zhiyan; Xiong, Jingfeng [Yingli Green Energy Holding Co., LTD, Baoding (China); Vlooswijk, A. [Tempress Systems, Vaassen (Netherlands)

    2012-06-15

    This article will review our recent progress in development of high-efficiency cells on n-type monocrystalline Si wafers. With boron-doped front emitter, phosphorous BSF, and screen-printed metallisation, at this moment such cells reach an efficiency of over 19%. We describe recent results of processing with reduced front contact area, and improved BSF and improved rear surface passivation, which are key parameters that limit the cell efficiency. The improved processing leads to an efficiency of 20%. The cell process has also been adopted for fabrication of metal-wrap-through back-contact cells. Without the improved contact recombination and BSF, an MWT cell efficiency of 19.7% is reached, 0.3% higher than the corresponding 'standard' (non-back-contact) cells.

  10. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  11. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    International Nuclear Information System (INIS)

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  12. Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

    Science.gov (United States)

    Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

    2018-04-01

    In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

  13. n-Type organic semiconductors in organic electronics.

    Science.gov (United States)

    Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

    2010-09-08

    Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

  14. Phénomènes dépendants du spin dans des structures à un puits quantique CdMnTe à modulation de dopage de type-n

    OpenAIRE

    Teran , Francisco Jose

    2001-01-01

    The study of the electronic and magnetic properties of n-type modulation doped CdMnTe quantum well structures has allowed to investigate the sp-d exchange interaction between 2D electrons and localized magnetic moments of Mn2+ ions. Such exchange interaction realigns the electronic spin states leading to a giant Zeeman splitting which deeply modifies the optical and electronic properties of the semiconductor host. At low magnetic fields, the sp-d exchange interaction term can be successfully ...

  15. Surface photovoltage spectroscopy of real n-type GaAs(110) surfaces

    International Nuclear Information System (INIS)

    El-Dessouki, M.S.; El-Guiziri, S.B.; Gobrial, F.Z.

    1989-10-01

    N-type GaAs single crystals cut parallel to the (110) plane and doped with phosphorus by ion beam implantation were used in the present study. Temperature dependence of the bulk electrical conductivity showed two distinct activated regions with activation energies Et 1 =0.75±0.04eV, and Et 2 =0.12±0.04eV. The first activation energy is probably that of deep phosphorous impurities, while the second was related to long range disorder in the sample near room temperature. Surface photovoltage studies at room temperature were carried out at atmospheric pressure and in vacuum for etched and unetched samples. For n-type GaAs etched surface, the experimentally observed surface states were not found to change their positions by changing the pressure. But in the case of etched samples the surface states showed some redistribution under vacuum. The time constants for the initial rise and fall of CPD by illumination and after switching it off, τ 1 and τ 2 , respectively, were found to depend on the illumination intensity and photon energy. Their values range between 4 and 15 s. (author). 31 refs, 6 figs, 1 tab

  16. Electric transport in N-type Fe2O3

    NARCIS (Netherlands)

    Acket, G.A.; Volger, J.

    Resistivity, Seebeck-coefficient, Hall-coefficient and magneto-resistance of n-type single crystal ferric oxide (hematite), containing Sn4+ as an impurity, are reported. The resistivity does not show important anisotropy. The Hall- and magneto-resistance effects are probably related to the parasitic

  17. Opioid inhibition of N-type Ca2+ channels and spinal analgesia couple to alternative splicing.

    Science.gov (United States)

    Andrade, Arturo; Denome, Sylvia; Jiang, Yu-Qiu; Marangoudakis, Spiro; Lipscombe, Diane

    2010-10-01

    Alternative pre-mRNA splicing occurs extensively in the nervous systems of complex organisms, including humans, considerably expanding the potential size of the proteome. Cell-specific alternative pre-mRNA splicing is thought to optimize protein function for specialized cellular tasks, but direct evidence for this is limited. Transmission of noxious thermal stimuli relies on the activity of N-type Ca(V)2.2 calcium channels in nociceptors. Using an exon-replacement strategy in mice, we show that mutually exclusive splicing patterns in the Ca(V)2.2 gene modulate N-type channel function in nociceptors, leading to a change in morphine analgesia. Exon 37a (e37a) enhances μ-opioid receptor-mediated inhibition of N-type calcium channels by promoting activity-independent inhibition. In the absence of e37a, spinal morphine analgesia is weakened in vivo but the basal response to noxious thermal stimuli is not altered. Our data suggest that highly specialized, discrete cellular responsiveness in vivo can be attributed to alternative splicing events regulated at the level of individual neurons.

  18. Borazino-Doped Polyphenylenes.

    Science.gov (United States)

    Marinelli, Davide; Fasano, Francesco; Najjari, Btissam; Demitri, Nicola; Bonifazi, Davide

    2017-04-19

    The divergent synthesis of two series of borazino-doped polyphenylenes, in which one or more aryl units are replaced by borazine rings, is reported for the first time, taking advantage of the decarbonylative [4 + 2] Diels-Alder cycloaddition reaction between ethynyl and tetraphenylcyclopentadienone derivatives. Because of the possibility of functionalizing the borazine core with different groups on the aryl substituents at the N and B atoms of the borazino core, we have prepared borazino-doped polyphenylenes featuring different doping dosages and orientations. To achieve this, two molecular modules were prepared: a core and a branching unit. Depending on the chemical natures of the central aromatic module and the reactive group, each covalent combination of the modules yields one exclusive doping pattern. By means of this approach, three- and hexa-branched hybrid polyphenylenes featuring controlled orientations and dosages of the doping B 3 N 3 rings have been prepared. Detailed photophysical investigations showed that as the doping dosage is increased, the strong luminescent signal is progressively reduced. This suggests that the presence of the B 3 N 3 rings engages additional deactivation pathways, possibly involving excited states with an increasing charge-separated character that are restricted in the full-carbon analogues. Notably, a strong effect of the orientational doping on the fluorescence quantum yield was observed for those hybrid polyphenylene structures featuring low doping dosages. Finally, we showed that Cu-catalyzed 1,3-dipolar cycloaddition is also chemically compatible with the BN core, further endorsing the inorganic benzene as a versatile aromatic scaffold for engineering of molecular materials with tailored and exploitable optoelectronic properties.

  19. n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Frank, Otakar; Drijkoningen, S.; Haenen, K.; Mortet, Vincent; Kavan, Ladislav

    2016-01-01

    Roč. 6, č. 56 (2016), s. 51387-51393 ISSN 2046-2069 R&D Projects: GA ČR GA13-31783S Grant - others:AV ČR(CZ) G.0456.1 Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Amorphous films * Cyclic voltammetry * Diamond films Subject RIV: CG - Electrochemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 3.108, year: 2016

  20. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2012-01-01

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  1. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlögl, Udo

    2012-08-23

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  2. Nanostructured oxide materials and modules for high temperature power generation from waste heat

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Pryds, Nini

    2013-01-01

    are not easily satisfied by conventional thermoelectric materials. Not only they must possess a sufficient thermoelectric performance, they should also be stable at high temperatures, nontoxic and low-cost comprising elements, and must be also able to be processed and shaped cheaply. Oxides are among...... the strongest candidate materials for this purpose. In this review, the progress in the development of two representative p- and n-type novel oxide materials based on Ca3Co4O9 and doped-ZnO is presented. Thermoelectric modules built up from these oxides were fabricated, tested at high temperatures, and compared...... with other similar oxide modules reported in the literature. A maximum power density of 4.5 kW/m2 was obtained for an oxide module comprising of 8 p-n couples at a temperature difference of 496 K, an encouraging result in the context of the present high temperature oxide modules....

  3. Theory of Doping and Defects in III-V Nitrides

    OpenAIRE

    van de Walle, Chris G.; Stampfl, Catherine; Neugebauer, Joerg

    1998-01-01

    Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon and oxygen readily form donors. The properties of oxygen, including DX-center formation, support it as the main cause of unintentional n-type conductivity. For p-type doping we find that the solubility of Mg is the main factor limiting the hole concentratio...

  4. Graded Doping for Enhanced Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Ning, Zhijun

    2013-02-05

    A novel approach to improving all-inorganic colloidal quantum dot (CQD) homojunction solar cells by engineering the doping spatial profile to produce a doping gradient within the n-type absorber is presented. The doping gradient greatly improves carrier collection and enhances the voltages attainable by the device, leading to a 1 power point power conversion efficiency (PCE) improvement over previous inorganic CQD solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Road to Grid Parity through Deployment of Low-Cost 21.5% N-Type Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Velundur, Vijay [Suniva, Norcross, GA (United States)

    2017-04-19

    This project seeks to develop and deploy differentiated 21.5% efficient n-type Si solar cells while reaching the SunShot module cost goal of ≤ $0.50/W. This objective hinges on development of enabling low cost technologies that simplify the manufacturing process and reduce overall processing costs. These comprise of (1) Boron emitter formation and passivation; (2) Simplified processing process for emitter and BSF layers; and (3) Advanced metallization for the front and back contacts.

  6. Electrical transport in n-type ZnMgSSe grown by molecular beam epitaxy on GaAs

    International Nuclear Information System (INIS)

    Marshall, T.; Petruzzello, J.A.; Herko, S.P.

    1994-01-01

    Significant progress in improving the Performance of blue-green II-VI semiconductor injection lasers has come about from advances in the epitaxial growth and doping of ZnMgSSe on GaAs substrates. This paper investigates electrical transport and its relation to structural quality in n-type Zn 1-y Mg y S x Se 1-x epilayers doped with Cl, grown by molecular beam epitaxy. The composition parameters x and y vary from about 0.12-0.18 and 0.08-0.15, respectively. The quaternary epilayers studied are lattice-matched (or nearly so) to the GaAs substrate. Temperature-dependent Hall-effect measurements are performed on seven n-type ZnMgSSe:Cl epilayers, and a technique is presented whereby the resulting mobility-vs-temperature data is compared with data for ZnSe to obtain a structural figure of merit that is useful in characterizing the quaternary epilayer. 29 refs., 4 figs

  7. From gene engineering to gene modulation and manipulation: can we prevent or detect gene doping in sports?

    Science.gov (United States)

    Fischetto, Giuseppe; Bermon, Stéphane

    2013-10-01

    During the last 2 decades, progress in deciphering the human gene map as well as the discovery of specific defective genes encoding particular proteins in some serious human diseases have resulted in attempts to treat sick patients with gene therapy. There has been considerable focus on human recombinant proteins which were gene-engineered and produced in vitro (insulin, growth hormone, insulin-like growth factor-1, erythropoietin). Unfortunately, these substances and methods also became improper tools for unscrupulous athletes. Biomedical research has focused on the possible direct insertion of gene material into the body, in order to replace some defective genes in vivo and/or to promote long-lasting endogenous synthesis of deficient proteins. Theoretically, diabetes, anaemia, muscular dystrophies, immune deficiency, cardiovascular diseases and numerous other illnesses could benefit from such innovative biomedical research, though much work remains to be done. Considering recent findings linking specific genotypes and physical performance, it is tempting to submit the young athletic population to genetic screening or, alternatively, to artificial gene expression modulation. Much research is already being conducted in order to achieve a safe transfer of genetic material to humans. This is of critical importance since uncontrolled production of the specifically coded protein, with serious secondary adverse effects (polycythaemia, acute cardiovascular problems, cancer, etc.), could occur. Other unpredictable reactions (immunogenicity of vectors or DNA-vector complex, autoimmune anaemia, production of wild genetic material) also remain possible at the individual level. Some new substances (myostatin blockers or anti-myostatin antibodies), although not gene material, might represent a useful and well-tolerated treatment to prevent progression of muscular dystrophies. Similarly, other molecules, in the roles of gene or metabolic activators [5-aminoimidazole-4

  8. Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

    2017-07-01

    β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

  9. Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

    Directory of Open Access Journals (Sweden)

    Wolfgang Molnar

    2012-07-01

    Full Text Available Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3 from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW by the well-established vapor–liquid–solid (VLS mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD. These as grown NWs were investigated by means of scanning electron microscopy (SEM and transmission electron microscopy (TEM, as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.

  10. Density functional theory based study of chlorine doped WS2-metal interface

    International Nuclear Information System (INIS)

    Chanana, Anuja; Mahapatra, Santanu

    2016-01-01

    Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS 2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS 2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS 2 .

  11. Density functional theory based study of chlorine doped WS{sub 2}-metal interface

    Energy Technology Data Exchange (ETDEWEB)

    Chanana, Anuja; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [NanoScale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-03-07

    Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS{sub 2} with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS{sub 2} supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS{sub 2}.

  12. Spin injection in n-type resonant tunneling diodes.

    Science.gov (United States)

    Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

    2012-10-25

    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

  13. Doping assessment in GaAs nanowires

    DEFF Research Database (Denmark)

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  14. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  15. Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

    Science.gov (United States)

    An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

    2018-07-01

    Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi2Te3) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m‑1K‑2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi2Te3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

  16. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    Science.gov (United States)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

  17. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  18. Lifetime degradation of n-type Czochralski silicon after hydrogenation

    Science.gov (United States)

    Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

    2018-04-01

    Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

  19. Agmatine suppresses peripheral sympathetic tone by inhibiting N-type Ca(2+) channel activity via imidazoline I2 receptor activation.

    Science.gov (United States)

    Kim, Young-Hwan; Jeong, Ji-Hyun; Ahn, Duck-Sun; Chung, Seungsoo

    2016-08-26

    Agmatine, a putative endogenous ligand of imidazoline receptors, suppresses cardiovascular function by inhibiting peripheral sympathetic tone. However, the molecular identity of imidazoline receptor subtypes and its cellular mechanism underlying the agmatine-induced sympathetic suppression remains unknown. Meanwhile, N-type Ca(2+) channels are important for the regulation of NA release in the peripheral sympathetic nervous system. Therefore, it is possible that agmatine suppresses NA release in peripheral sympathetic nerve terminals by inhibiting Ca(2+) influx through N-type Ca(2+) channels. We tested this hypothesis by investigating agmatine effect on electrical field stimulation (EFS)-evoked contraction and NA release in endothelium-denuded rat superior mesenteric arterial strips. We also investigated the effect of agmatine on the N-type Ca(2+) current in superior cervical ganglion (SCG) neurons in rats. Our study demonstrates that agmatine suppresses peripheral sympathetic outflow via the imidazoline I2 receptor in rat mesenteric arteries. In addition, the agmatine-induced suppression of peripheral vascular sympathetic tone is mediated by modulating voltage-dependent N-type Ca(2+) channels in sympathetic nerve terminals. These results suggest a potential cellular mechanism for the agmatine-induced suppression of peripheral sympathetic tone. Furthermore, they provide basic and theoretical information regarding the development of new agents to treat hypertension. Copyright © 2016 Elsevier Inc. All rights reserved.

  20. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A.T.; Krupanidhi, S.B.

    2012-01-01

    Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

  1. Co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO

    International Nuclear Information System (INIS)

    Feng, Wu-Wei; Cho, Sunglae; Wang, Ming-Song; Dung, Dang Duc

    2016-01-01

    Highlights: • Native defects cannot explain large increase of resistance of the sample after 200 °C-annealing. • Native defects cannot explain changes of carrier concentration being in range of few orders lower than for stoichiometry. • Above two important phenomena can be explained by H-related defects. • n-type conductivity in ZnO cannot be solely ascribed to H-defects or native defects, both could be contributor. • The contribution of CH_x to the majority of n-type conductivity was ruled out. - Abstract: We reinvestigated the origin of n-type conductivity in the unintentionally-doped ZnO. 1000 °C-annealed sample was free of H- and C-related impurities and still demonstrated strong conductivity revealing the significant contribution of native defects to the n-type conductivity of ZnO. However, it is hydrogen impurities, rather than native defects, that can only explain the increase of sample resistivity after annealing in Ar at 200 °C and the small difference in the variation of carrier density upon considerable changes of the stoichiometry of sample. In this regard, we proposed that co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO in general, and the hydrogen impurities probably are the preferential origin responsible for the strong conductivity in ZnO if they exist substantially in the sample.

  2. Co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wu-Wei, E-mail: wfeng@cugb.edu.cn [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Wang, Ming-Song [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

    2016-01-28

    Highlights: • Native defects cannot explain large increase of resistance of the sample after 200 °C-annealing. • Native defects cannot explain changes of carrier concentration being in range of few orders lower than for stoichiometry. • Above two important phenomena can be explained by H-related defects. • n-type conductivity in ZnO cannot be solely ascribed to H-defects or native defects, both could be contributor. • The contribution of CH{sub x} to the majority of n-type conductivity was ruled out. - Abstract: We reinvestigated the origin of n-type conductivity in the unintentionally-doped ZnO. 1000 °C-annealed sample was free of H- and C-related impurities and still demonstrated strong conductivity revealing the significant contribution of native defects to the n-type conductivity of ZnO. However, it is hydrogen impurities, rather than native defects, that can only explain the increase of sample resistivity after annealing in Ar at 200 °C and the small difference in the variation of carrier density upon considerable changes of the stoichiometry of sample. In this regard, we proposed that co-contribution of hydrogen impurities and native defects might be the answer for the n-type conductivity in ZnO in general, and the hydrogen impurities probably are the preferential origin responsible for the strong conductivity in ZnO if they exist substantially in the sample.

  3. Characterisation of the hole-acoustic phonon interaction in modulation doped Si/Si1-xGex (0.085<=x<=0.28) heterostructures

    International Nuclear Information System (INIS)

    Braithwaite, G.

    1999-06-01

    The work presented in this Thesis describes the author's experimental investigation of the two dimensional hole gas - acoustic phonon interaction in non-inverted modulation doped strained Si 1-x Ge x heterostructures. This covers a range of Ge content (0.085≤x≤0.28) and carrier temperature range 0.35K ≤ T C ≤ 4.2K. Using the technique of carrier temperature mapping, the present author has measured the energy loss rate characteristics of the two dimensional hole gas as a function of carrier temperature. The carrier temperature thermometers used are, the zero magnetic field resistivity, the low magnetic field magnetoresistance, and, the thermal damping of the amplitude of the Shubnikov - de Haas oscillations. The present author has also used an exact numerical calculation to determine the theoretical energy loss rates over the range of Ge contents and found consistently that the deformation potential interaction is best described as being weakly screened. Also, it is found, that by including an additional piezoelectric-like acoustic phonon coupled interaction, it is possible to achieve improved agreement between the theoretical energy loss rates and the experimental data over the range of carrier temperatures 0.35K≤T C ≤4.2K. The present author suggests that a possible source of this interaction is linked to the correlated interface roughness that may be expected at the upper Si/Si 1-x Ge x heterointerface. From analysis of the low magnetic field magnetoresistance measurements, the author has determined the carrier temperature dependence of the hole-hole scattering rate. It will be shown that by considering the fully self consistent nature of carrier-carrier scattering in the weak localisation regime ('dirty limit'), and by including the effect of carrier-carrier scattering in the 'clean limit', it is possible to calculate the dephasing rates for this system and obtain agreement with the measured experimental data to within an accuracy of ±10%. This is a

  4. A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects

    Science.gov (United States)

    Charbonnieras, A. R.; Tellier, C. R.

    1999-07-01

    This paper is devoted to the theoretical study of the influence of the temperature and of the doping on the piezoresistance of N-type silicon. In the first step the fractional change in the resistivity caused by stresses is calculated in the framework of a multivalley model using a kinetic transport formulation based on the Boltzmann transport equation. In the second step shifts in the minima of the conduction band and the resulting shift of the Fermi level are expressed in terms of deformation potentials and of stresses. General expressions for the fundamental linear, π_{11} and π_{12}, and non-linear, π_{111}, π_{112}, π_{122} and π_{123}, piezoresistance coefficients are then derived. Plots of the non-linear piezoresistance coefficients against the reduced shift of the Fermi level or against temperature allow us to characterize the influence of doping and temperature. Finally some attempts are made to estimate the non-linearity for heavily doped semiconductor gauges. Cette publication est consacrée à l'étude théorique de l'influence de la température et du dopage sur la piezorésistivité du silicium type N. Dans une première étape nous adoptons le modèle de vallées et nous utilisons une formulation cinétique du transport électronique faisant appel à l'équation de transport de Boltzmann pour calculer la variation de la résistivité du semiconducteur sous contrainte. Dans la deuxième étape nous exprimons les déplacements des minima de la bande de conduction et du niveau de Fermi en termes de potentiels de déformation et de contraintes. Nous proposons ensuite des expressions générales pour les coefficients piezorésistifs fondamentaux linéaires, π_{11} et π_{12}, et non-linéaires, π_{111}, π_{112}, π_{122} et π_{123}. Des représentations graphiques des variations des coefficients non-linéaires permettent de caractériser l'influence du dopage et de la température. Enfin nous fournissons une première pré-estimation des effets

  5. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  6. Tin-vacancy acceptor levels in electron-irradiated n-type silicon

    DEFF Research Database (Denmark)

    Larsen, A. Nylandsted; Goubet, J. J.; Mejlholm, P.

    2000-01-01

    Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron...... annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal...... temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating...

  7. Spray pyrolysis deposition and photoelectrochemical properties of n-type BiOI nanoplatelet thin films.

    Science.gov (United States)

    Hahn, Nathan T; Hoang, Son; Self, Jeffrey L; Mullins, C Buddie

    2012-09-25

    Bismuth oxy-iodide is a potentially interesting visible-light-active photocatalyst; yet there is little research regarding its photoelectrochemical properties. Herein we report the synthesis of BiOI nanoplatelet photoelectrodes by spray pyrolysis on fluorine-doped tin oxide substrates at various temperatures. The films exhibited n-type conductivity, most likely due to the presence of anion vacancies, and optimized films possessed incident photon conversion efficiencies of over 20% in the visible range for the oxidation of I(-) to I(3)(-) at 0.4 V vs Ag/AgCl in acetonitrile. Visible-light photons (λ > 420 nm) contributed approximately 75% of the overall photocurrent under AM1.5G illumination, illustrating their usefulness under solar light illumination. A deposition temperature of 260 °C was found to result in the best performance due to the balance of morphology, crystallinity, impurity levels, and optical absorption, leading to photocurrents of roughly 0.9 mA/cm(2) at 0.4 V vs Ag/AgCl. Although the films performed stably in acetonitrile, their performance decreased significantly upon extended exposure to water, which was apparently caused by a loss of surface iodine and subsequent formation of an insulating bismuth hydroxide layer.

  8. W and WSix Ohmic contacts on p- and n-type GaN

    International Nuclear Information System (INIS)

    Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

    1999-01-01

    W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

  9. Gene doping in modern sport.

    OpenAIRE

    MAREK SAWCZUK; AGNIESZKA MACIEJEWSKA; PAWEL CIESZCZYK,

    2009-01-01

    Background: The subject of this paper is gene doping, which should be understood as "he non-therapeutic use of cells, genes, genetic elements, or of the modulation of gene expression, having the capacity to improve athletic performance". The authors of this work, based on the review of literature and previous research, make an attempt at wider characterization of gene doping and the discussion of related potential threats.Methods: This is a comprehensive survey of literature on the latest app...

  10. Metabolic modulators of the exercise response: doping control analysis of an agonist of the peroxisome proliferator-activated receptor δ (GW501516) and 5-aminoimidazole-4-carboxamide ribonucleotide (AICAR).

    Science.gov (United States)

    Pokrywka, A; Cholbinski, P; Kaliszewski, P; Kowalczyk, K; Konczak, D; Zembron-Lacny, A

    2014-08-01

    In 2008, the team of Ronald Evans, a professor at the Salk Institute Gene Expression Laboratory, published an article about the effects of two metabolic modulators branded as GW501516 and AICAR on physical endurance of laboratory animals. Both substances, also called 'exercise pills' or 'exercise mimetics', showed the ability to cause multidirectional changes in muscle metabolism. In particular, they stimulated fatty acid oxidation and promoted muscle remodelling. These compounds were regarded as very promising drug candidates for the treatment of diseases such as obesity and type 2 diabetes. GW501516 and AICAR have received considerable attention in doping control due to assumed performance-enhancing properties and recent confiscations of illicitly distributed drugs containing AICAR. Therefore, the World Anti-Doping Agency added GW501516 and AICAR to the Prohibited List in 2009. This review covers the cellular and systemic effects of the metabolic modulators' administration with special emphasis on their role in exercise metabolism. It also presents the advancements in development of methodologies for the detection of their abuse by athletes.

  11. Label-free room-temperature phosphorescence turn-on detection of tiopronin based on Cu{sup 2+}-modulated homocysteine-capped manganese doped zinc sulfide quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yan; Fan, Zhefeng, E-mail: crush_bc@163.com

    2015-04-15

    A label-free turn-on room-temperature phosphorescence (RTP) sensor for tiopronin based on Cu{sup 2+}-modulated homocysteine (Hcy)-capped Mn-doped ZnS quantum dots (QDs) was described in this paper. The RTP of Hcy-capped Mn-doped ZnS QDs can be effectively quenched by Cu{sup 2+} due to the binding of Cu{sup 2+} to the Hcy on the surface of the QDs and the electron transfer generated from the photoexcited QDs to Cu{sup 2+}. The high affinity of tiopronin to Cu{sup 2+} enables the dissociation of the ion from the surface of the QDs, thereby forming a stable complex with tiopronin in the solution, and recovering the RTP of the QDs. The Cu{sup 2+}-induced RTP quenching and subsequent tiopronin-induced RTP recovery for MPA-capped ZnS QDs provide a solid basis for the present RTP sensor based on QDs for the detection of tiopronin. The detection limit for tiopronin is 0.18 ng mL{sup −1}, the relative standard deviations is 1.9%, and the recovery of urine and serum samples with tiopronin addition range from 96% to 106% under optimal conditions. The proposed method was successfully applied to biological fluids and obtained satisfactory results. - Highlights: • The high water-solubility Mn-doped-QDs with good RTP property was synthesized. • The RTP intensity of the QDs could be effectively quenched by Cu{sup 2+} ions. • Cu{sup 2+} ions were selectively separated from the QDs by tiopronin. • The RTP of the Cu{sup 2+}-modulated QDs was restored by tiopronin. • The tiopronin sensor was applied to biological fluids with satisfactory results.

  12. Molecular rectification modulated by alternating boron and nitrogen co-doping in a combined heterostructure of two zigzag-edged trigonal graphenes

    International Nuclear Information System (INIS)

    Wang, Li-hua; Sun, Yan; Zhang, Zi-zhen; Ding, Bing-jun; Guo, Yong

    2014-01-01

    The rectifying properties of a heterostructure combined with two trigonal graphenes are investigated by first-principles approach. The graphenes have left (left and right) vertical benzenes substituted with alternating nitrogen and boron atoms. The results indicate that co-doping atoms have distinct influences on the rectifying performance of such devices. When the left trigonal graphene is doped and two trigonal graphenes are bound through a BH pair, a reverse rectifying behavior can be observed. However, a forward rectifying behavior is observed when they are bound through an NH (NB) pair. The rectifying effect is more prominent for the NB pair.

  13. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  14. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

    2007-01-01

    Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

  15. [Doping. High-tech cheating in sport].

    Science.gov (United States)

    Striegel, H; Simon, P

    2007-07-01

    Today, doping is no longer limited to the classical drugs with well known effects and side effects. Older generation anabolic steroids are used mainly in fitness and recreational sports. In contrast, due to doping tests, substances used in competitive sports include peptide hormones, medications not yet approved, and even specially developed drugs, such as designer steroids. Of the peptide hormones, particularly growth hormones (human growth hormone), erythropoietin and generics, insulin, and presumably insulin-like growth factor 1 are used. Substance groups potentially relevant for doping are selective androgen receptor modulators and gene therapy drugs. For most of these, there is no knowledge about side effects in healthy individuals, and no adequate doping tests. Therefore, anti-doping measures cannot rely solely on the continual improvement of doping analyses, but should include increased measures for doping prevention. Not only sports organizations, but also governmental agencies should be involved in developing and implementing these measures.

  16. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

    Science.gov (United States)

    Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

    1997-11-01

    Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

  17. Hydrogen Doping into MoO3 Supports toward Modulated Metal-Support Interactions and Efficient Furfural Hydrogenation on Iridium Nanocatalysts.

    Science.gov (United States)

    Xie, Lifang; Chen, Ting; Chan, Hang Cheong; Shu, Yijin; Gao, Qingsheng

    2018-03-16

    As promising supports, reducible metal oxides afford strong metal-support interactions to achieve efficient catalysis, which relies on their band states and surface stoichiometry. In this study, in situ and controlled hydrogen doping (H doping) by means of H 2 spillover was employed to engineer the metal-support interactions in hydrogenated MoO x -supported Ir (Ir/H-MoO x ) catalysts and thus promote furfural hydrogenation to furfuryl alcohol. By easily varying the reduction temperature, the resulting H doping in a controlled manner tailors low-valence Mo species (Mo 5+ and Mo 4+ ) on H-MoO x supports, thereby promoting charge redistribution on Ir and H-MoO x interfaces. This further leads to clear differences in H 2 chemisorption on Ir, which illustrates its potential for catalytic hydrogenation. As expected, the optimal Ir/H-MoO x with controlled H doping afforded high activity (turnover frequency: 4.62 min -1 ) and selectivity (>99 %) in furfural hydrogenation under mild conditions (T=30 °C, PH2 =2 MPa), which means it performs among the best of current catalysts. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

    Science.gov (United States)

    Sharma, Venus; Srivastava, Sunita

    2018-04-01

    Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

  19. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  20. Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2017-12-01

    A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

  1. Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

    KAUST Repository

    Baker, L. Robert

    2011-08-18

    The role of the oxide-metal interface in determining the activity and selectivity of chemical reactions catalyzed by metal particles on an oxide support is an important topic in science and industry. A proposed mechanism for this strong metal-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report an approximately 2-fold increase in the turnover rate of catalytic carbon monoxide oxidation on platinum nanoparticles supported on stoichiometric titanium dioxide (TiO2) when the TiO2 is made highly n-type by fluorine (F) doping. However, for nonstoichiometric titanium oxide (TiOX<2) the effect of F on the turnover rate is negligible. Studies of the titanium oxide electronic structure show that the energy of free electrons in the oxide determines the rate of reaction. These results suggest that highly n-type TiO2 electronically activates adsorbed oxygen (O) by electron spillover to form an active O- intermediate. © 2011 American Chemical Society.

  2. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E., E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Young, Matthew; Dameron, Arrelaine; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Park, Helen Hejin; Chua, Danny; Gordon, Roy G. [Harvard University, Cambridge, Massachusetts 02139 (United States)

    2014-12-29

    The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  3. Naphthalene Diimide Based n-Type Conjugated Polymers as Efficient Cathode Interfacial Materials for Polymer and Perovskite Solar Cells.

    Science.gov (United States)

    Jia, Tao; Sun, Chen; Xu, Rongguo; Chen, Zhiming; Yin, Qingwu; Jin, Yaocheng; Yip, Hin-Lap; Huang, Fei; Cao, Yong

    2017-10-18

    A series of naphthalene diimide (NDI) based n-type conjugated polymers with amino-functionalized side groups and backbones were synthesized and used as cathode interlayers (CILs) in polymer and perovskite solar cells. Because of controllable amine side groups, all the resulting polymers exhibited distinct electronic properties such as oxidation potential of side chains, charge carrier mobilities, self-doping behaviors, and interfacial dipoles. The influences of the chemical variation of amine groups on the cathode interfacial effects were further investigated in both polymer and perovskite solar cells. We found that the decreased electron-donating property and enhanced steric hindrance of amine side groups substantially weaken the capacities of altering the work function of the cathode and trap passivation of the perovskite film, which induced ineffective interfacial modifications and declining device performance. Moreover, with further improvement of the backbone design through the incorporation of a rigid acetylene spacer, the resulting polymers substantially exhibited an enhanced electron-transporting property. Upon use as CILs, high power conversion efficiencies (PCEs) of 10.1% and 15.2% were, respectively, achieved in polymer and perovskite solar cells. Importantly, these newly developed n-type polymers were allowed to be processed over a broad thickness range of CILs in photovoltaic devices, and a prominent PCE of over 8% for polymer solar cells and 13.5% for perovskite solar cells can be achieved with the thick interlayers over 100 nm, which is beneficial for roll-to-roll coating processes. Our findings contribute toward a better understanding of the structure-performance relationship between CIL material design and solar cell performance, and provide important insights and guidelines for the design of high-performance n-type CIL materials for organic and perovskite optoelectronic devices.

  4. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  5. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  6. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  7. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  8. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Mingshu [School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui Province 230026 (China); Dong, Juncai, E-mail: dongjc@ihep.ac.cn [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, Dongliang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-02-01

    Doping is widely applied in yielding desirable properties and functions in silicon technology; thus, fully understanding the relaxation mechanism for lattice-mismatch strain is of fundamental importance. Here we systematically study the local lattice distortion near dilute IIIA-, IVA-, and VA-group substitutional dopants in Si crystal using density functional theory, and anomalous radial and angular strain relaxation modes are first revealed. Both the nearest-neighbor (NN) bond-distances and the tetrahedral bond-angles are found to exhibit completely opposite dependence on the electronic configurations for the low Z (Z<26) and high Z (Z>26) dopants. More surprisingly, negative and positive angular shifts for the second NN twelve Si2 atoms are unveiled surrounding the p- and n-type dopants, respectively. While electron localization function shows that the doped hole and electron are highly localized near the dopants, hence being responsible for the abnormal angular shifts, a universal radial strain relaxation mechanism dominated by a competition of the Coulomb interactions among the ion-core, bond-charge, and the localized hole or electron is also proposed. These findings may prove to be instrumental in precise design of silicon-based solotronics.

  9. Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

    Science.gov (United States)

    Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

    2018-04-01

    Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

  10. First-principles study of Cu adsorption on vacancy-defected/Au-doped graphene

    Science.gov (United States)

    Liu, Yang; An, Libao; Gong, Liang

    2018-04-01

    To enhance the interaction between Cu and graphene in graphene reinforced Cu matrix composites, the first principles calculation was carried out to study the adsorption of Cu atoms on graphene. P-type doping and n-type doping were formed, respectively, on vacancy-defected and Au-doped graphene based on band structure analysis, and this was verified by subsequent investigation on density of states. A computation on charge transfer confirmed that p-type doping could promote the electron transport between Cu and graphene, while n-type doping would prevent it. In addition, adsorption energy and Mulliken population analysis revealed that both vacancy defects and Au doping could improve the stability of the Cu-graphene system. The research conducted in this paper provides useful guidance for the preparation of Cu/graphene composites.

  11. Performance and stress analysis of oxide thermoelectric module architecture designed for maximum power output

    DEFF Research Database (Denmark)

    Wijesekara, Waruna; Rosendahl, Lasse; Wu, NingYu

    Oxide thermoelectric materials are promising candidates for energy harvesting from mid to high temperature heat sources. In this work, the oxide thermoelectric materials and the final design of the high temperature thermoelectric module were developed. Also, prototypes of oxide thermoelectric...... of real thermoelectric uni-couples, the three-dimensional governing equations for the coupled heat transfer and thermoelectric effects were developed. Finite element simulations of this system were done using the COMSOL Multiphysics solver. Prototypes of the models were developed and the analytical...... generator were built for high temperature applications. This paper specifically discusses the thermoelectric module design and the prototype validations of the design. Here p type calcium cobalt oxide and n type aluminum doped ZnO were developed as the oxide thermoelectric materials. Hot side and cold side...

  12. Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

    Science.gov (United States)

    Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

    2017-07-01

    Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

  13. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

    DEFF Research Database (Denmark)

    Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg

    2017-01-01

    Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost...... because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications....

  14. Towards the next generation 23% efficient n-type cells with low cost manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Yelundur, Vijay [Suniva Inc., Norcross, GA (United States)

    2017-04-19

    Suniva, Inc., in collaboration with the University Center for Excellence in Photovoltaics (UCEP) at the Georgia Institute of Technology (GIT) proposed this comprehensive three year program to enable the development of an advanced high performance product that will help the US regain its competitive edge in PV. This project was designed to overcome cost and efficiency barriers through advances in PV science, technology innovation, low-cost manufacturing and full production of ~22.5% efficient n-type Si cells in Norcross, GA. At the heart of the project is the desire to complement the technology being developed concurrently under the Solarmat and ARPAe initiatives to develop a differentiated product superior in both performance and cost effectiveness to the competing alternatives available on the market, and push towards achieving SunShot objectives while ensuring a sustainable business model based on US manufacturing. A significant reduction of the costs in modules produced today will need to combine reductions in wafer costs, cell processing costs as well as module fabrication costs while delivering a product that is not only more efficient under test conditions but also increases the energy yield in outdoor operations. This project will result in a differentiated high performance product and technology that is consistent with sustaining PV manufacturing in the US for a longer term and further highlights the need for continued support for developing the next generation concepts that can keep US manufacturing thriving to support the growing demand for PV in the US and consistent with the US government’s mandates for energy independence.

  15. Biomarker monitoring in sports doping control.

    Science.gov (United States)

    Pottgiesser, Torben; Schumacher, Yorck Olaf

    2012-06-01

    Biomarker monitoring can be considered a new era in the effort against doping. Opposed to the old concept in doping control of direct detection of a prohibited substance in a biological sample such as urine or blood, the new paradigm allows a personalized longitudinal monitoring of biomarkers that indicate non-physiological responses independently of the used doping technique or substance, and may cause sanctioning of illicit practices. This review presents the development of biomarker monitoring in sports doping control and focuses on the implementation of the Athlete Biological Passport as the current concept of the World Anti Doping Agency for the detection of blood doping (hematological module). The scope of the article extends to the description of novel biomarkers and future concepts of application.

  16. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  17. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    International Nuclear Information System (INIS)

    Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

    2017-01-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

  18. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    Science.gov (United States)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  19. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Science.gov (United States)

    Yin, H.; Ziemann, P.

    2014-06-01

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  20. Silicon doping techniques using chemical vapor dopant deposition

    NARCIS (Netherlands)

    Popadic, M.

    2009-01-01

    Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping

  1. Thermoelectric material comprising scandium doped zinc cadmium oxide

    DEFF Research Database (Denmark)

    2016-01-01

    There is presented a composition of scandium doped Zinc Cadmium Oxide with the general formula ZnzCdxScyO which the inventors have prepared, and for which material the inventors have made the insight that it is particularly advantageous as an n-type oxide material, such as particularly advantageous...

  2. Impurity strength and impurity domain modulated frequency-dependent linear and second non-linear response properties of doped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Nirmal Kumar [Department of Physics, Suri Vidyasagar College, Suri, Birbhum 731 101, West Bengal (India); Ghosh, Manas [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)

    2011-08-15

    We explore the pattern of frequency-dependent linear and second non-linear optical responses of repulsive impurity doped quantum dots harmonically confined in two dimensions. The dopant impurity potential chosen assumes a Gaussian form and it is doped into an on-center location. The quantum dot is subject to a periodically oscillating external electric field. For some fixed values of transverse magnetic field strength ({omega}{sub c}) and harmonic confinement potential ({omega}{sub 0}), the influence of impurity strength (V{sub 0}) and impurity domain ({xi}) on the diagonal components of the frequency-dependent linear ({alpha}{sub xx} and {alpha}{sub yy}) and second non-linear ({gamma}{sub xxxx} and {gamma}{sub yyyy}) responses of the dot are computed through a linear variational route. The investigations reveal that the optical responses undergo enhancement with increase in both V{sub 0} and {xi} values. However, in the limitingly small dopant strength regime one observes a drop in the optical responses with increase in V{sub 0}. A time-average rate of energy transfer to the system is often invoked to support the findings. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  4. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Science.gov (United States)

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  5. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    International Nuclear Information System (INIS)

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  6. Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well

    CERN Document Server

    Pozela, K

    2001-01-01

    The calculations of electron scattering rates by polar optical (PO) phonons in an AlGaAs/GaAs/AlGaAs quantum well (QW) with a different width and doping level are performed. The electron-PO-phonon scattering mechanisms which are responsible for the alternate dependence of electron mobility on a QW width, as well as for the decrease of conductivity in the QW with increasing electron concentration are determined. It is shown that the degeneration of electron gas decreases the electron scattering rate by PO-phonon emission and increases the scattering rate by phonon absorption. The competition between the decrease of the intrasubband scattering and the increase of the intersubband scattering by PO-phonon absorption is responsible for the alternate changes of the mobility with a QW width

  7. Cu2 + modulated nitrogen-doped grapheme quantum dots as a turn-off/on fluorescence sensor for the selective detection of histidine in biological fluid

    Science.gov (United States)

    Wang, Zhiyu; Fan, ZheFeng

    2018-01-01

    A highly sensitive sensor for detection of histidine (His) based on the nitrogen-doped graphene quantum dots (N-GQDs)-Cu2 + system has been designed. The N-GQDs were synthesized by one-step hydrothermal approach according to previous report. The fluorescence of N-GQDs can be effectively quenched by Cu2 + due to the binding between Cu2 + and functional groups on the surface of N-GQDs. The high affinity of His to Cu2 + enables Cu2 + to be dissociated from the surface of N-GQDs and recovering the fluorescence. The sensor displayed a sensitive response to His in the concentration range of 0-35 μmol L- 1, with a detection limit of 72.2 nmol L- 1. The proposed method is successfully applied to detect His in samples with a recovery range of 96-102%.

  8. Electronic structure and field emission properties of nitrogen doped graphene nano-flakes (GNFs:N) and carbon nanotubes (CNTs:N)

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

    2016-09-01

    Highlights: • Nitrogen doped graphene nano-flakes (GNFs:N) and carbon nano-tubes (CNTs:N) are used to study the electronic/bonding structure along with their defects state. • The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy used for the study of the defects states of CNTs:N than GNFs:N. • The electron field emission result shows that the turn on electric field is lower in case of CNTs:N than GNFs:N. • All results are good agreement with XANES and the results obtained from Raman spectra. - Abstract: Substitution of hetero-atom doping is a promising route to modulate the outstanding material properties of carbon nanotubes and graphene for customized applications. Nitrogen-doping has been introduced to ensure tunable work-function, enhanced n-type carrier concentration, diminished surface energy, and manageable polarization. Along with the promising assessment of N-doping effects, research on the N-doped carbon based composite structures is emerging for the synergistic integration with various functional materials. Nitrogen undoped/doped graphene nano-flakes (GNFs/GNFs:N) and multiwall carbon nano-tubes (MWCNTs/MWCNTs:N) are used for comparative study of their electronic/bonding structure along with their defects state. X-ray absorption near edge structure (XANES) spectroscopy shows that the GNFs:N produce mainly pyridine like structure; whereas MWCNTs:N shows graphitic nitrogen atoms are attached with the carbon lattice. The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy shows that the defects is higher in MWCNTs:N than GNFs:N. The electron field emission result shows that the turn on electric field is lower (higher electron emission current) in case of MWCNTs:N than GNFs:N and are good agreement with XANES and the results obtained from Raman spectra.

  9. Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap

    Science.gov (United States)

    Wang, Hui; Shi, Jun-jie; Huang, Pu; Ding, Yi-min; Wu, Meng; Cen, Yu-lang; Yu, Tongjun

    2018-04-01

    Recently, two-dimensional (2D) InSe nanosheet becomes a promising material for electronic and optoelectronic nano-devices due to its excellent electron transport, wide bandgap tunability and good metal contact. The inevitable native point defects are essential in determining its characteristics and device performance. Here we investigate the defect formation energy and thermodynamic transition levels for the most important native defects and clarify the physical origin of n-type conductivity in unintentionally doped 2D InSe by using the powerful first-principles calculations. We find that both surface In adatom and Se vacancy are the key defects, and the In adatom, donated 0.65 electrons to the host, causes the n-type conductivity in monolayer InSe under In-rich conditions. For bilayer or few-layer InSe, the In interstitial within the van der Waals gap, transferred 0.68 electrons to InSe, is found to be the most stable donor defect, which dominates the n-type character. Our results are significant for understanding the defect nature of 2D InSe and improving the related nano-device performance.

  10. Controlling the optical bistability via quantum interference in a four-level N-type atomic system

    International Nuclear Information System (INIS)

    Sahrai, M.; Asadpour, S.H.; Mahrami, H.; Sadighi-Bonabi, R.

    2011-01-01

    We investigate the optical bistability (OB) and optical multi-stability (OM) in a four-level N-type atomic system. The effect of spontaneously generated coherence (SGC) on OB and OM is then discussed. It is found that SGC makes the medium phase dependent, so the optical bistability and multi-stability threshold can be controlled via relative phase between applied fields. We realize that the frequency detuning of probe and coupling fields with the corresponding atomic transition plays an important role in creation OB and OM. Moreover, the effect of laser coupling fields and an incoherent pumping field on reduction of OB and OM threshold is then discussed. - Highlights: → We modulate the optical bistability (OB) in a four-level N-type atomic system. The effect of spontaneously generated coherence on OB is discussed. → Spontaneously generated coherence makes the medium phase dependent. → The frequency of coupling field can reduce OB threshold. → We discuss the effect of an incoherent pumping field on reduction of OB threshold.

  11. Modulation of electromagnetic and absorption properties in 18-26.5 GHz frequency range of strontium hexaferrites with doping of cobalt-zirconium

    Science.gov (United States)

    Pubby, Kunal; Narang, Sukhleen Bindra; Kaur, Prabhjyot; Chawla, S. K.

    2017-05-01

    Hexaferrite nano-particles of stoichiometric composition {{Sr}}{({{CoZr}})_x}{{F}}{{{e}}_{12 - 2x}}{{{O}}_{19}}, with x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0 were prepared using sol-gel auto-combustion route owing to its advantages such as low sintering temperature requirement, homogeneity and uniformity of grains. Tartaric acid as a fuel was utilized to complete the chemical reaction. The goal of this study is to analyse the effect of co-substitution of cobalt and zirconium on the electromagnetic and absorption properties of pure {{SrF}}{{{e}}_{12}}{{{O}}_{19}} hexaferrite. The properties were measured on the rectangular pellets of thickness 2.5 mm for K-frequency band using Vector Network Analyzer. The doping of Co-Zr has resulted in increase in real as well as imaginary parts of permittivity. The values of real permittivity lie in the range 3.6-7.0 for all the composition. The real part of permeability remains in range 0.7-1.6 in the studied frequency band for all the samples and shows slightly increasing trend with frequency. The maximum values of dielectric loss tangent peak (3.04) and magnetic loss tangent peak (2.34), among all the prepared compositions, have been observed for composition x = 0.2. Compositions with x = 0.6 and x = 0.0 also have high dielectric and magnetic loss peaks. Dielectric loss peaks are attributed to dielectric resonance and magnetic loss peaks are attributed to natural resonance. Experimentally determined reflection loss results show that all six compositions of prepared series have high values of absorption to propose them as single-layer absorbers in 18-26.5 GHz frequency range. The composition with x = 0.2 has maximum absorption capacity with reflection loss peak of -37.2 dB at 24.3 GHz frequency. The undoped composition also has high absorption peak (-25.46 dB), but -10 dB absorption bandwidth is minimum (2.2 GHz) out of the present series. Maximum absorption bandwidth is obtained for x = 1.0 (4.1 GHz). Other doped compositions also

  12. Modulation of electromagnetic and absorption properties in 18-26.5 GHz frequency range of strontium hexaferrites with doping of cobalt-zirconium

    Energy Technology Data Exchange (ETDEWEB)

    Pubby, Kunal; Narang, Sukhleen Bindra [Guru Nanak Dev University, Department of Electronics Technology, Amritsar (India); Kaur, Prabhjyot; Chawla, S.K. [Guru Nanak Dev University, Department of Chemistry, Centre for Advanced Studies-I, Amritsar (India)

    2017-05-15

    Hexaferrite nano-particles of stoichiometric composition Sr(CoZr){sub x}Fe{sub 12-2x}O{sub 19}, with x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0 were prepared using sol-gel auto-combustion route owing to its advantages such as low sintering temperature requirement, homogeneity and uniformity of grains. Tartaric acid as a fuel was utilized to complete the chemical reaction. The goal of this study is to analyse the effect of co-substitution of cobalt and zirconium on the electromagnetic and absorption properties of pure SrFe{sub 12}O{sub 19} hexaferrite. The properties were measured on the rectangular pellets of thickness 2.5 mm for K-frequency band using Vector Network Analyzer. The doping of Co-Zr has resulted in increase in real as well as imaginary parts of permittivity. The values of real permittivity lie in the range 3.6-7.0 for all the composition. The real part of permeability remains in range 0.7-1.6 in the studied frequency band for all the samples and shows slightly increasing trend with frequency. The maximum values of dielectric loss tangent peak (3.04) and magnetic loss tangent peak (2.34), among all the prepared compositions, have been observed for composition x = 0.2. Compositions with x = 0.6 and x = 0.0 also have high dielectric and magnetic loss peaks. Dielectric loss peaks are attributed to dielectric resonance and magnetic loss peaks are attributed to natural resonance. Experimentally determined reflection loss results show that all six compositions of prepared series have high values of absorption to propose them as single-layer absorbers in 18-26.5 GHz frequency range. The composition with x = 0.2 has maximum absorption capacity with reflection loss peak of -37.2 dB at 24.3 GHz frequency. The undoped composition also has high absorption peak (-25.46 dB), but -10 dB absorption bandwidth is minimum (2.2 GHz) out of the present series. Maximum absorption bandwidth is obtained for x = 1.0 (4.1 GHz). Other doped compositions also have high absorption bandwidth

  13. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  14. [Doping and urologic tumors].

    Science.gov (United States)

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  15. Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

    OpenAIRE

    Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef

    2015-01-01

    The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yield...

  16. Thermoelectric properties of rare earth-doped n-type Bi2Se0∙3Te2∙7 ...

    Indian Academy of Sciences (India)

    Administrator

    the electrical resistivity, but also help to reduce the thermal conductivity. ... environmental impact and high reliability in applications of solid-state electronic cooling and power generation. ... After the system was cooled down to room tempe-.

  17. Enhanced thermoelectric performance of n-type Bi2O2Se ceramics induced by Ge doping

    Czech Academy of Sciences Publication Activity Database

    Ruleová, P.; Plecháček, T.; Kašparová, J.; Vlček, Milan; Beneš, L.; Lostak, P.; Drašar, Č.

    2018-01-01

    Roč. 47, č. 2 (2018), s. 1459-1466 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA16-07711S Institutional support: RVO:61389013 Keywords : semiconductors * chalcogenides * x-ray diffraction Subject RIV: CA - Inorganic Chemistry OBOR OECD: Inorganic and nuclear chemistry Impact factor: 1.579, year: 2016

  18. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

    International Nuclear Information System (INIS)

    Gokce, B.; Aspnes, D. E.; Lucovsky, G.; Gundogdu, K.

    2011-01-01

    It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.

  19. Microstructure and mechanical properties of thermoelectric nanostructured n-type silicon-germanium alloys synthesized employing spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Bathula, Sivaiah [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Department of Applied Physics, Delhi Technological University, Delhi (India); Gahtori, Bhasker; Tripathy, S. K.; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Jayasimhadri, M. [Department of Applied Physics, Delhi Technological University, Delhi (India)

    2014-08-11

    Owing to their high thermoelectric (TE) figure-of-merit, nanostructured Si{sub 80}Ge{sub 20} alloys are evolving as a potential replacement for their bulk counterparts in designing efficient radio-isotope TE generators. However, as the mechanical properties of these alloys are equally important in order to avoid in-service catastrophic failure of their TE modules, we report the strength, hardness, fracture toughness, and thermal shock resistance of nanostructured n-type Si{sub 80}Ge{sub 20} alloys synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements. These mechanical properties show a significant enhancement, which has been correlated with the microstructural features at nano-scale, delineated by transmission electron microscopy.

  20. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  1. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  2. Effect of light illumination and temperature on P3HT films, n-type Si, and ITO

    Energy Technology Data Exchange (ETDEWEB)

    Scudiero, Louis, E-mail: scudiero@wsu.edu [Chemistry Department and Material Science and Engineering Program, Washington State University, Pullman, Washington 99164 (United States); Shen, Yang [Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904 (United States); Gupta, Mool C., E-mail: mgupta@virginia.edu [Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904 (United States)

    2014-02-15

    The secondary electron (SE) cutoff energy region spectra are recorded before (dark), during (light) and after laser exposure (dark) for P3HT, Si, and ITO. An SE cutoff energy shift is observed when the bare n-type doped Si substrate is exposed to 532 nm light. This is attributed to the presence of a thin native oxide layer (∼1.5 nm) on Si. No energy shift is detected on the Ar sputtered clean Si. Also, no shift was observed for ITO. When exposed to light, a net SE energy cutoff shift was measured for P3HT deposited on both Si and ITO substrates at room temperature. However, no significant valence band maximum (VBM) energy shifts were measured for P3HT that was spun cast on both substrates under dark and light illumination. Furthermore, light effect was investigated at three different temperatures; 25, 70, and 160{sup o}C and it is found that for P3HT, the magnitude of the SE cutoff energy change is not only substrate dependent but also depends on temperature.

  3. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  4. Selective formation of porous layer on n-type InP by anodic etching combined with scratching

    International Nuclear Information System (INIS)

    Seo, Masahiro; Yamaya, Tadafumi

    2005-01-01

    The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

  5. Identification of substitutional Li in n-type ZnO and its role as an acceptor

    Science.gov (United States)

    Johansen, K. M.; Zubiaga, A.; Makkonen, I.; Tuomisto, F.; Neuvonen, P. T.; Knutsen, K. E.; Monakhov, E. V.; Kuznetsov, A. Yu.; Svensson, B. G.

    2011-06-01

    Monocrystalline n-type zinc oxide (ZnO) samples prepared by different techniques and containing various amounts of lithium (Li) have been studied by positron annihilation spectroscopy (PAS) and secondary ion mass spectrometry. A distinct PAS signature of negatively charged Li atoms occupying a Zn-site (LiZn-), so-called substitutional Li, is identified and thus enables a quantitative determination of the content of LiZn. In hydrothermally grown samples with a total Li concentration of ~2×1017cm-3,LiZn is found to prevail strongly, with only minor influence, by other possible configurations of Li. Also in melt grown samples doped with Li to a total concentration as high as 1.5×1019cm-3, a considerable fraction of the Li atoms (at least 20%) is shown to reside on the Zn-site, but despite the corresponding absolute acceptor concentration of ⩾(2-3)×1018cm-3, the samples did not exhibit any detectable p-type conductivity. The presence of LiZn is demonstrated to account for the systematic difference in positron lifetime of 10-15 ps between Li-rich and Li-lean ZnO materials as found in the literature, but further work is needed to fully elucidate the role of residual hydrogen impurities and intrinsic open volume defects.

  6. Selective formation of porous layer on n-type InP by anodic etching combined with scratching

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

    2005-11-10

    The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

  7. Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

    Science.gov (United States)

    Liu, Shih-Ming J.; Das, Mukunda B.; Peng, Chin-Kun; Klem, John; Henderson, Timothy S.

    1986-01-01

    Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

  8. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  9. Calcium decorated and doped phosphorene for gas adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Lalitha, Murugan; Nataraj, Yuvarani; Lakshmipathi, Senthilkumar, E-mail: lsenthilkumar@buc.edu.in

    2016-07-30

    Highlights: • Phosphorene exhibits n-type/p-type nature on decorating/doping calcium respectively. • Gas molecules (CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3}) are physisorbed on phosphorene. • Ca decorated Phosphorene is recommended for high density hydrogen storage applications. • Calcium doping on zigzag and armchair sites makes phosphorene more reactive. • CH{sub 4}, CO{sub 2}, H{sub 2} prefer Ca-doped on zigzag1 site, whereas ammonia prefers Ca-doped on armchair. - Abstract: In this paper, we present the results from first-principles study based on the electronic structure and adsorption characteristics of CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3} adsorbed on Ca decorated/doped phosphorene. Our study finds that phosphorene exhibits n-type behaviour on decorating calcium, and p-type on doping calcium. Gas molecules are physisorbed on both pristine and calcium-mediated phosphorene, visible through their lower binding energy and charge transfer values. Ca decorated phosphorene is suitable for hydrogen storage due to its higher binding energy for H{sub 2}. Ca doped structures shows increased binding affinity towards CH{sub 4} and NH{sub 3} in zigzag1 direction and armchair directions respectively. The extracts of our study implies that Ca doped phosphorene possess increased binding affinity towards gas molecules, and the results are highly helpful for gas adsorption and to design gas sensors based on calcium doped or decorated phosphorene.

  10. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    Both predominantly hole transporting material (TCTA) and an exclusively electron transporting host material (TAZ) are doped with the green phosphorescent dye tris(phenylpyridine)iridium [Ir(ppy)3]. The intrinsic and doped transport and emission layers are formed using a high vacuum controlled co-evaporation deposition ...

  11. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

    DEFF Research Database (Denmark)

    Febvrier, Arnaud le; Van Nong, Ngo; Abadias, Gregory

    2018-01-01

    Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over......-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale....

  13. Preparation of n-type Bi{sub 2}Te{sub 3} thermoelectric materials by non-contact dispenser printing combined with selective laser melting

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Keping; Yan, Yonggao; Zhang, Jian; Mao, Yu; Xie, Hongyao; Zhang, Qingjie; Tang, Xinfeng [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei (China); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, WA (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI (United States)

    2017-06-15

    The manufacturing cost has been a bottle neck for broader applications of thermoelectric (TE) modules. We have developed a rapid, facile, and low cost method that combines non-contact dispenser printing with selective laser melting (SLM) and we demonstrate it on n-type Bi{sub 2}Te{sub 3}-based materials. Using this approach, single phase n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} thin layers with the Seebeck coefficient of -152 μV K{sup -1} at 300 K have been prepared. Assembling such thin layers on top of each other, the performance of thus prepared bulk sample is comparable to Bi{sub 2}Te{sub 3}-based materials fabricated by the conventional techniques. Dispenser printing combined with SLM is a promising manufacturing process for TE materials. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. New Conotoxin SO-3 Targeting N-type Voltage-Sensitive Calcium Channels

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2006-04-01

    Full Text Available Selective blockers of the N-type voltage-sensitive calcium (CaV channels are useful in the management of severe chronic pain. Here, the structure and function characteristics of a novel N-type CaV channel blocker, SO-3, are reviewed. SO-3 is a 25-amino acid conopeptide originally derived from the venom of Conus striatus, and contains the same 4-loop, 6-cysteine framework (C-C-CC-C-C as O-superfamily conotoxins. The synthetic SO-3 has high analgesic activity similar to ω-conotoxin MVIIA (MVIIA, a selective N-type CaV channel blocker approved in the USA and Europe for the alleviation of persistent pain states. In electrophysiological studies, SO-3 shows more selectivity towards the N-type CaV channels than MVIIA. The dissimilarity between SO-3 and MVIIA in the primary and tertiary structures is further discussed in an attempt to illustrate the difference in selectivity of SO-3 and MVIIA towards N-type CaV channels.

  15. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

    Science.gov (United States)

    Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

    2018-05-09

    Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

  16. Magnéli oxides as promising n-type thermoelectrics

    Directory of Open Access Journals (Sweden)

    Gregor Kieslich

    2014-10-01

    Full Text Available The discovery of a large thermopower in cobalt oxides in 1997 lead to a surge of interest in oxides for thermoelectric application. Whereas conversion efficiencies of p-type oxides can compete with non-oxide materials, n-type oxides show significantly lower thermoelectric performances. In this context so-called Magnéli oxides have recently gained attention as promising n-type thermoelectrics. A combination of crystallographic shear and intrinsic disorder lead to relatively low thermal conductivities and metallic-like electrical conductivities in Magnéli oxides. Current peak-zT values of 0.3 around 1100 K for titanium and tungsten Magnéli oxides are encouraging for future research. Here, we put Magnéli oxides into context of n-type oxide thermoelectrics and give a perspective where future research can bring us.

  17. Development of n-type polymer semiconductors for organic field-effect transistors

    International Nuclear Information System (INIS)

    Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

    2015-01-01

    We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

  18. Effects of composition modulation on the luminescence properties of Eu(3+) doped Li1-xAgxLu(MoO4)2 solid-solution phosphors.

    Science.gov (United States)

    Cheng, Fangrui; Xia, Zhiguo; Molokeev, Maxim S; Jing, Xiping

    2015-11-07

    Double molybdate scheelite-type solid-solution phosphors Li1-xAgxLu1-y(MoO4)2:yEu(3+) were synthesized by the solid state reaction method, and their crystal structures and luminescence properties were investigated in detail. The composition modulation and structural evolution of this series of samples were studied and the selected AgEu(MoO4)2, AgLu(MoO4)2, LiLu(MoO4)2 and LiEu(MoO4)2 phases were analyzed based on the Rietveld refinement. Depending on the variation of the Li/Ag ratio in Li1-xAgxLu1-y(MoO4)2:yEu(3+) phosphors, the difference in the luminescence properties of Li1-xAgxLu1-y(MoO4)2:yEu(3+) phosphors was ascribed to two factors, one reason could be assigned to the coupling effect and the nonradiative transition between the energy levels of LixAg1-xLu(MoO4)2 matrices and the activator Eu(3+), another could be due to the near ultraviolet energy absorption and transmission efficiency between the charge-transfer (CT) band of O(2-)-Mo(6+) and the 4f → 4f emissive transitions of Eu(3+). The ultraviolet-visible diffuse reflection spectra (UV-vis DRS) and Raman spectra analysis were also used to verify the above mechanism.

  19. Doping and cluster formation in diamond

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2011-01-01

    Introducing a cluster formation model, we provide a rational fundamental viewpoint for the difficulty to achieve n-type dopeddiamond. We argue that codoping is the way forward to form appropriately doped shallow regions in diamond and other forms of carbon such as graphene. The electronegativities of the codopants are an important design criterion for the donor atom to efficiently donate its electron. We propose that the nearest neighbour codopants should be of a considerably higher electronegativity compared to the donor atom. Codoping strategies should focus on phosphorous for which there are a number of appropriate codopants.

  20. Doping and cluster formation in diamond

    KAUST Repository

    Schwingenschlögl, Udo

    2011-09-09

    Introducing a cluster formation model, we provide a rational fundamental viewpoint for the difficulty to achieve n-type dopeddiamond. We argue that codoping is the way forward to form appropriately doped shallow regions in diamond and other forms of carbon such as graphene. The electronegativities of the codopants are an important design criterion for the donor atom to efficiently donate its electron. We propose that the nearest neighbour codopants should be of a considerably higher electronegativity compared to the donor atom. Codoping strategies should focus on phosphorous for which there are a number of appropriate codopants.

  1. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    International Nuclear Information System (INIS)

    Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

    2016-01-01

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  2. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  3. High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

    International Nuclear Information System (INIS)

    Liu, Wei; Zhang, Qiang; Yin, Kang; Chi, Hang; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

    2013-01-01

    The study of Mg 2 Si 1−x Sn x -based thermoelectric materials has received widespread attention due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. In this research, Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y solid solutions with the nominal Bi content of 0≤y≤0.03 are prepared using a two-step solid state reaction followed by spark plasma sintering consolidation. Within this range of Bi concentrations, no evidence of second phase segregation was found. Bi is confirmed to occupy the Si/Sn sites in the crystal lattice and behaves as an efficient n-type dopant in Mg 2 Si 0.4 Sn 0.6 . Similar to the effect of Sb, Bi doping greatly increases the electron density and the power factor, and reduces the lattice thermal conductivity of Mg 2.16 Si 0.4 Sn 0.6 solid solutions. Overall, the thermoelectric figure of merit of Bi-doped Mg 2.16 Si 0.4 Sn 0.6 solid solutions is improved by about 10% in comparison to values obtained with Sb-doped materials of comparable dopant content. This improvement comes chiefly from a marginally higher Seebeck coefficient of Bi-doped solid solutions. The highest ZT∼1.4 is achieved for the y=0.03 composition at 800 K. - Graphical abstract: (a)The relationship between electrical conductivity and power factor for Sb/Bi-doped Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y (Sb/Bi) y (0 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. (c)Temperature dependent dimensionless figure of merit ZT of Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. - Highlights: • Bi doped Mg 2.16 Si 0.4 Sn 0.6 showed 15% enhancement in the power factor as compared to Sb doped samples. • Bi doping reduced κ ph of Mg 2.16 Si 0.4 Sn 0.6 due to stronger point defect scattering. • The highest ZT=1.4 at 800 K was achieved for Mg 2.16 (Si 0.4 Sn 0.6 ) 0.97 Bi 0.03

  4. Progress in doping of ruthenium silicide (Ru2Si3)

    International Nuclear Information System (INIS)

    Vining, C.B.; Allevato, C.E.

    1992-01-01

    This paper reports that ruthenium silicide (Ru 2 Si 3 ) is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels

  5. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  6. Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

    Science.gov (United States)

    Roy, Pinku; Maiti, Tanmoy

    2018-02-01

    Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

  7. Doping mechanism in pure CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Werner, F.; Colombara, D.; Melchiorre, M.; Spindler, C.; Siebentritt, S. [Physics and Materials Science Research Unit, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux (Luxembourg); Valle, N.; El Adib, B. [Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Rue du Brill 41, L-4422 Belvaux (Luxembourg)

    2016-05-07

    We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe{sub 2} thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe{sub 2} solar cell absorbers.

  8. N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

    NARCIS (Netherlands)

    Ringk, A.; Roelofs, Christian; Smits, E.C.P.; van der Marel, C.; Salzmann, I.; Neuhold, A.; Gelinck, G.H.; Resel, R.; de Leeuw, D.M.; Strohriegl, P.

    Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an

  9. The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Tung-Hsien; Hong, Franklin Chau-Nan

    2013-01-01

    Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

  10. Doping and musculoskeletal system: short-term and long-lasting effects of doping agents.

    Science.gov (United States)

    Nikolopoulos, Dimitrios D; Spiliopoulou, Chara; Theocharis, Stamatios E

    2011-10-01

    Doping is a problem that has plagued the world of competition and sports for ages. Even before the dawn of Olympic history in ancient Greece, competitors have looked for artificial means to improve athletic performance. Since ancient times, athletes have attempted to gain an unfair competitive advantage through the use of doping substances. A Prohibited List of doping substances and methods banned in sports is published yearly by the World Anti-Doping Agency. Among the substances included are steroidal and peptide hormones and their modulators, stimulants, glucocorticosteroids, β₂-agonists, diuretics and masking agents, narcotics, and cannabinoids. Blood doping, tampering, infusions, and gene doping are examples of prohibited methods indicated on the List. Apart from the unethical aspect of doping, as it abrogates fair-play's principle, it is extremely important to consider the hazards it presents to the health and well-being of athletes. The referred negative effects for the athlete's health have to do, on the one hand, by the high doses of the performance-enhancing agents and on the other hand, by the relentless, superhuman strict training that the elite or amateur athletes put their muscles, bones, and joints. The purpose of this article is to highlight the early and the long-lasting consequences of the doping abuse on bone and muscle metabolism. © 2010 The Authors Fundamental and Clinical Pharmacology © 2010 Société Française de Pharmacologie et de Thérapeutique.

  11. Perovskite-Perovskite Homojunctions via Compositional Doping.

    Science.gov (United States)

    Dänekamp, Benedikt; Müller, Christian; Sendner, Michael; Boix, Pablo P; Sessolo, Michele; Lovrincic, Robert; Bolink, Henk J

    2018-05-11

    One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite-perovskite homojunctions have not been reported. Here we present a perovskite-perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI 2 , obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is confirmed by infrared spectroscopy, which allows us to determine the MA content in the films. We analyzed the resulting thin-film junction by cross-sectional scanning Kelvin probe microscopy (SKPM) and found a contact potential difference (CPD) of 250 mV between the two differently doped perovskite layers. Planar diodes built with the perovskite-perovskite homojunction show the feasibility of our approach for implementation in devices.

  12. Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  13. Investigation of a 0.52 eV absorption band of n-type Ge1-xSix solid solutions irradiated with fast electrons at 77 K

    International Nuclear Information System (INIS)

    Abbasov, Sh.M.; Allakhverdiev, K.R.; Agaverdieva, G.T.; Bakhyshov, N.A.; Nagiev, A.I.

    1987-01-01

    Solid solutions belonging to the Ge 1-x Si x system are among the promising semiconductor materials. There is no published information on the absorption band in the region of 0.52 eV in Ge 1-x Si x solid solutions irradiated with fast electrons. The authors determined the infrared absorption spectra, impurity photoconductivity, and Hall effect of n-type Ge 1-x Si x solid solutions doped with antimony. These solid solutions were irradiated at 77 K with 5 MeV electrons in doses up to 2 x 10 17 cm -2 . This irradiation was carried out by a method described in Ref. 3

  14. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    OpenAIRE

    Robert Kucharski; Łukasz Janicki; Marcin Zajac; Monika Welna; Marcin Motyka; Czesław Skierbiszewski; Robert Kudrawiec

    2017-01-01

    GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-in...

  15. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Science.gov (United States)

    Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

    2018-03-01

    Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  16. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Ali Hassan

    2018-03-01

    Full Text Available Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD, Energy Dispersive X-ray Spectroscopy (EDS and X-ray Photoelectron Spectroscopy (XPS have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  17. Effect of indium doping on zinc oxide films prepared by chemical ...

    Indian Academy of Sciences (India)

    Administrator

    confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping ... elements like Al, Ga and In can be used as n-type dopant. (Kato et al 2002) .... (α is the absorption coefficient and hν the photon energy).

  18. N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Akane Matumoto

    2017-10-01

    Full Text Available Based on the crystal structure analysis, the overlap integral between the frontier molecular orbitals of adjacent F8CuPcs in the one-dimensional chain is estimated: the overlap integral between the lowest unoccupied molecular orbitals is 5.4 × 10−3, which is larger than that in a typical n-type semiconducing material F16CuPc (2.1 × 10−3, whereas that between the highest occupied molecular orbitals is 2.9 × 10−4. Contrary to previous studies in air, we found that an organic field-effect transistor (OFET composed of F8CuPc essentially shows clear n-type semiconducting behavior in vacuum.

  19. Organic n-type materials for charge transport and charge storage applications.

    Science.gov (United States)

    Stolar, Monika; Baumgartner, Thomas

    2013-06-21

    Conjugated materials have attracted much attention toward applications in organic electronics in recent years. These organic species offer many advantages as potential replacement for conventional materials (i.e., silicon and metals) in terms of cheap fabrication and environmentally benign devices. While p-type (electron-donating or hole-conducting) materials have been extensively reviewed and researched, their counterpart n-type (electron-accepting or electron-conducting) materials have seen much less popularity despite the greater need for improvement. In addition to developing efficient charge transport materials, it is equally important to provide a means of charge storage, where energy can be used on an on-demand basis. This perspective is focused on discussing a selection of representative n-type materials and the efforts toward improving their charge-transport efficiencies. Additionally, this perspective will also highlight recent organic materials for battery components and the efforts that have been made to improve their environmental appeal.

  20. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    International Nuclear Information System (INIS)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung

    2017-01-01

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10"1"4 to 10"1"8 in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer

  1. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung [Dept. of Mechanical Convergence Engineering, Hanyang University, Seoul(Korea, Republic of)

    2017-02-15

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10{sup 14} to 10{sup 18} in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

  2. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

    2014-05-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

  3. Simulation optimizing of n-type HIT solar cells with AFORS-HET

    Science.gov (United States)

    Yao, Yao; Xiao, Shaoqing; Zhang, Xiumei; Gu, Xiaofeng

    2017-07-01

    This paper presents a study of heterojunction with intrinsic thin layer (HIT) solar cells based on n-type silicon substrates by a simulation software AFORS-HET. We have studied the influence of thickness, band gap of intrinsic layer and defect densities of every interface. Details in mechanisms are elaborated as well. The results show that the optimized efficiency reaches more than 23% which may give proper suggestions to practical preparation for HIT solar cells industry.

  4. High power Co3O4/ZnO p–n type piezoelectric transducer

    International Nuclear Information System (INIS)

    Hu, Yuh-Chung; Lee, Tsung-Han; Chang, Pei-Zen; Su, Pei-Chen

    2015-01-01

    Enhancing the output power of piezoelectric transducer is essential in order to supply sufficient and sustainable power to wireless sensor nodes or electronic devices. In this work, a Co 3 O 4 /ZnO p–n type power piezoelectric transducer which can be operated at low frequencies has been developed by utilizing n-type semiconducting zinc oxide (ZnO) and p-type semiconducting tricobalt tetroxide (Co 3 O 4 ). We utilize ZnO to be the piezoelectric transducer and build a multi-layer (Au/Co 3 O 4 /ZnO/Ti) thin film structure. The ZnO thin film with preferred orientation along the (002) plane was deposited under optimized deposition conditions on the flexible titanium (Ti) foil with thickness of 80 μm. The Co 3 O 4 /ZnO interface forms a p–n junction and increases the difference in Fermi levels between the two electrodes, resulting in the great enhancement of output power. The measured output power of the p–n type piezoelectric transducer with optimal resistance of 100 kΩ is 10.4 μW at low operating frequency of 37 Hz, which is 10.9 times of output power of ZnO piezoelectric transducers. - Highlights: • Deposited zinc oxide performed good piezoelectric coefficient. • ZnO thin film with preferred orientation along the (002) plane was deposited. • A p–n type piezoelectric transducer with enhanced output power was fabricated. • 10.9 times increment in output power was obtained. • Increase of difference in Fermi level and p–n junction formation was explained

  5. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon

    2014-01-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

  6. Study of polarization phenomena in n-type CdZnTe

    Czech Academy of Sciences Publication Activity Database

    Elhadidy, Hassan; Dědic, V.; Franc, J.; Grill, R.

    2014-01-01

    Roč. 47, č. 5 (2014), Art. number 055104 ISSN 0022-3727 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068; GA MŠk(CZ) EE2.3.20.0214 Institutional support: RVO:68081723 Keywords : n-type CZT * polarization * electron de-trapping * Pockels effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.721, year: 2014

  7. Doping the Copper-Oxygen Planes with Electrons: The View with Photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Armitage, Norman P.

    2002-03-07

    The undoped parent compounds of high-temperature cuprate superconductors are known to be antiferromagnetic Mott insulators. As the CuO{sub 2} planes are doped with charge carriers, the antiferromagnetic phase subsides and superconductivity emerges. The symmetry, or the lack thereof, between doping with electrons (n-type) or holes (p-type) has important theoretical implications as most models implicitly assume symmetry. However, most of what we know about these superconductors comes from experiments performed on p-type materials. The much fewer number of measurements from n-type compounds suggest that there may be both commonalities and differences between the two sides of the phase diagram. This issue of electron/hole symmetry has not been seriously discussed, perhaps, because the experimental database of n-type results is very limited.

  8. Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

    International Nuclear Information System (INIS)

    Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

    2011-01-01

    We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

  9. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  10. Warm-Electron Effects in n-Type Silicon and Germanium

    DEFF Research Database (Denmark)

    Jørgensen, Mogens Hoffmann

    1967-01-01

    The Boltzmann equation describing the warm-electron case is discussed and a review is given of the scattering mechanisms for n-Ge and n-Si with relatively low doping levels. Taking into account the known band structure, the Boltzmann equation is solved by a numerical iteration method under...

  11. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.; Kahaly, M. Upadhyay; Cheng, Yingchun; Schwingenschlö gl, Udo

    2012-01-01

    deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition

  12. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    processes. This could lead to more effective control and use of oxygen precipitation for gettering. One of the principal purposes of this thesis is the extension of the infrared interstitial oxygen measurement technique to situations outside the measurement capacities of the standard technique. These situations include silicon slices exhibiting interfering precipitate absorption bands and heavily doped n-type silicon wafers. A new method is presented for correcting for the effect of multiple reflections in silicon wafers with optically rough surfaces. The technique for the measurement of interstitial oxygen in heavily doped n-type wafers is then used to perform a comparative study of oxygen precipitation in heavily antimony doped (.035 ohm-cm) silicon and lightly doped p-type silicon. A model is presented to quantitatively explain the observed suppression of defect formation in heavily doped n-type wafers.

  13. Physical and chemical properties of calcium doped neodymium manganite

    International Nuclear Information System (INIS)

    Tikhonova, L.A.; Zhuk, P.P.; Tonoyan, A.A.; Vecher, A.A.

    1991-01-01

    Physical and chemical properties of calcium doped neodymium manganite were investigated. It was shown that structure of perovskite with O'-orthorhombic distortion was characteristic for solid solutions of Nd 1-x Ca x MnO 3 (x=0-0.5). Maximum of conductivity for samples with x=0.2 was determined. Inversion of conductivity from p- (x=0) to n-type (x=0.5) was observed in increase of concentration of calcium doped addition. Values of thermal expansion coefficient of studied solid solutions of Nd 1-x Ca x MnO 3 didn't depend on concentration of doped addition within the range 700 to 1200 K and were (9.9-11.3)·10 -6 K -1

  14. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    International Nuclear Information System (INIS)

    Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

    2015-01-01

    We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

  15. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    Science.gov (United States)

    Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-01

    We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

  16. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    Science.gov (United States)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  17. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    International Nuclear Information System (INIS)

    Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

    2016-01-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

  18. The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

    2018-04-01

    The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

  19. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Science.gov (United States)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically

  20. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  1. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  2. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

    International Nuclear Information System (INIS)

    Arezki, Hakim; Jaffré, Alexandre; Alamarguy, David; Alvarez, José; Kleider, Jean-Paul; Boutchich, Mohamed; Ho, Kuan-I; Lai, Chao-Sung

    2015-01-01

    Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities

  3. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.; Chen, Mark S.; Niskala, Jeremy R.; Lee, Olivia P.; Yiu, Alan T.; Young, Eric P.; Frechet, Jean

    2014-01-01

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices

  4. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

    Science.gov (United States)

    Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

    2012-03-01

    We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

  5. A computational study on tuning the field emission and electronic properties of BN nanocones by impurity atom doping

    Science.gov (United States)

    Ahmadi, S.; Delir Kheirollahi Nezhad, P.; Hosseinian, A.; Vessally, E.

    2018-06-01

    We have inspected the effect of substituting a boron or nitrogen atom of a BN nanocone (BNNC) by two impurity atoms with lower and higher atomic numbers based on the density functional theory calculations. Our results explain the experimental observations in a molecular level. Orbital and partial density of states analyses show that the doping processes increase the electrical conductivity by creating new states within the gap of BNNC as follows: BeB > ON > CB > CN. The electron emission current from the surface of BNNC is improved after the CB and BeB dopings, and it is decreased by CN and ON dopings. The BeB and CN dopings make the BNNC a p-type semiconductor and the CB and ON dopings make it an n-type one in good agreement with the experimental results. The ON and BeB doping processes are suggested for the field emission current, and electrical conductivity enhancement, respectively.

  6. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    Directory of Open Access Journals (Sweden)

    Robert Kucharski

    2017-06-01

    Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

  7. Porosity dependence of positive magnetoconductance in n-type porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chouaibi, Bassem; Radaoui, Moufid; Benfredj, Amel; Bouchriha, Habib [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Romdhane, Samir [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Faculte des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Universite de Carthage (Tunisia); Bouaicha, Mongi [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    Positive magnetoconductance (MC) on n-type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi-1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length L{sup {phi}}. Good agreement between theoretical and experimental results was found (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Science.gov (United States)

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

    International Nuclear Information System (INIS)

    Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

    2014-01-01

    Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

  10. Doping process of p-type GaN nanowires: A first principle study

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

    2017-10-01

    The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

  11. Dephasing of LO-phonon-plasmon hybrid modes in n-type GaAs

    Science.gov (United States)

    Vallée, F.; Ganikhanov, F.; Bogani, F.

    1997-11-01

    The relaxation dynamics of coherent phononlike LO-phonon-plasmon hybrid modes is investigated in n-doped GaAs using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements performed for different crystal temperatures in the range 10-300 K as a function of the electron density injected by doping show a large reduction of the hybrid mode dephasing time compared to the bare LO-phonon one for densities larger than 1016 cm-3. The results are interpreted in terms of coherent decay of the LO-phonon-plasmon mixed mode in the weak-coupling regime and yield information on the plasmon and electron relaxation. The estimated average electron momentum relaxation times are smaller than those deduced from Hall mobility measurements, as expected from our theoretical model.

  12. The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

    Science.gov (United States)

    Maximov, M. V.; Shernyakov, Yu M.; Zubov, F. I.; Zhukov, A. E.; Gordeev, N. Yu; Korenev, V. V.; Savelyev, A. V.; Livshits, D. A.

    2013-10-01

    Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.

  13. The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

    International Nuclear Information System (INIS)

    Maximov, M V; Shernyakov, Yu M; Zhukov, A E; Gordeev, N Yu; Zubov, F I; Korenev, V V; Savelyev, A V; Livshits, D A

    2013-01-01

    Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities. (paper)

  14. Electron-doping by hydrogen in transition-metal dichalcogenides

    Science.gov (United States)

    Oh, Sehoon; Im, Seongil; Choi, Hyoung Joon

    Using first-principles calculations, we investigate the atomic and electronic structures of 2H-phase transition-metal dichalcogenides (TMDC), 2H-MX2, with and without defects, where M is Mo or W and X is S, Se or Te. We find that doping of atomic hydrogen on 2H-MX2 induces electron doping in the conduction band. To understand the mechanism of this electron doping, we analyze the electronic structures with and without impurities. We also calculate the diffusion energy barrier to discuss the spatial stability of the doping. Based on these results, we suggest a possible way to fabricate elaborately-patterned circuits by modulating the carrier type of 2H-MoTe2. We also discuss possible applications of this doping in designing nano-devices. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2016-C3-0052).

  15. Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dong-Wook, E-mail: shindong37@skku.edu; Kim, Tae Sung; Yoo, Ji-Beom, E-mail: jbyoo@skku.edu

    2016-10-15

    Highlights: • Substitution doping is a promising method for opening the energy band gap of graphene. • Substitution doping with phosphorus in the graphene lattice has numerous advantage such as high band gap, low formation energy, and high net charge density compared to nitrogen. • V{sub dirac} of Inductively coupled plasma (ICP) and triphenylphosphine (TPP) treated graphene was −57 V, which provided clear evidence of n-type doping. • Substitutional doping of graphene with phosphorus is verified by the XPS spectra of P 2p core level and EELS mapping of phosphorus. • The chemical bonding between P and graphene is very stable for a long time in air (2 months). - Abstract: Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V{sub dirac} of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

  16. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  17. Oxygen vacancies: The origin of n -type conductivity in ZnO

    Science.gov (United States)

    Liu, Lishu; Mei, Zengxia; Tang, Aihua; Azarov, Alexander; Kuznetsov, Andrej; Xue, Qi-Kun; Du, Xiaolong

    2016-06-01

    Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n -type conductivity in ZnO has been still unsettled in the past 50 years. Here, we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n -type conductivity as well as the nonstoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

  18. Molecular architecture of the N-type ATPase rotor ring from Burkholderia pseudomallei.

    Science.gov (United States)

    Schulz, Sarah; Wilkes, Martin; Mills, Deryck J; Kühlbrandt, Werner; Meier, Thomas

    2017-04-01

    The genome of the highly infectious bacterium Burkholderia pseudomallei harbors an atp operon that encodes an N-type rotary ATPase, in addition to an operon for a regular F-type rotary ATPase. The molecular architecture of N-type ATPases is unknown and their biochemical properties and cellular functions are largely unexplored. We studied the B. pseudomallei N 1 N o -type ATPase and investigated the structure and ion specificity of its membrane-embedded c-ring rotor by single-particle electron cryo-microscopy. Of several amphiphilic compounds tested for solubilizing the complex, the choice of the low-density, low-CMC detergent LDAO was optimal in terms of map quality and resolution. The cryoEM map of the c-ring at 6.1 Å resolution reveals a heptadecameric oligomer with a molecular mass of ~141 kDa. Biochemical measurements indicate that the c 17 ring is H + specific, demonstrating that the ATPase is proton-coupled. The c 17 ring stoichiometry results in a very high ion-to-ATP ratio of 5.7. We propose that this N-ATPase is a highly efficient proton pump that helps these melioidosis-causing bacteria to survive in the hostile, acidic environment of phagosomes. © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

  19. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  20. On the Phase Separation in n-Type Thermoelectric Half-Heusler Materials

    Directory of Open Access Journals (Sweden)

    Michael Schwall

    2018-04-01

    Full Text Available Half-Heusler compounds have been in focus as potential materials for thermoelectric energy conversion in the mid-temperature range, e.g., as in automotive or industrial waste heat recovery, for more than ten years now. Because of their mechanical and thermal stability, these compounds are advantageous for common thermoelectric materials such as Bi 2 Te 3 , SiGe, clathrates or filled skutterudites. A further advantage lies in the tunability of Heusler compounds, allowing one to avoid expensive and toxic elements. Half-Heusler compounds usually exhibit a high electrical conductivity σ , resulting in high power factors. The main drawback of half-Heusler compounds is their high lattice thermal conductivity. Here, we present a detailed study of the phase separation in an n-type Heusler materials system, showing that the Ti x Zr y Hf z NiSn system is not a solid solution. We also show that this phase separation is key to the thermoelectric high efficiency of n-type Heusler materials. These results strongly underline the importance of phase separation as a powerful tool for designing highly efficient materials for thermoelectric applications that fulfill the industrial demands of a thermoelectric converter.

  1. Study on anisotropy of n-type Mg3Sb2-based thermoelectric materials

    Science.gov (United States)

    Song, Shaowei; Mao, Jun; Shuai, Jing; Zhu, Hangtian; Ren, Zhensong; Saparamadu, Udara; Tang, Zhongjia; Wang, Bo; Ren, Zhifeng

    2018-02-01

    The recent discovery of a high thermoelectric figure of merit (ZT) in an n-type Mg3Sb2-based Zintl phase triggered an intense research effort to pursue even higher ZT. Based on our previous report on Mg3.1Nb0.1Sb1.5Bi0.49Te0.01, we report here that partial texturing in the (001) plane is achieved by double hot pressing, which is further confirmed by the rocking curves of the (002) plane. The textured samples of Mg3.1Nb0.1Sb1.5Bi0.49Te0.01 show a much better average performance in the (00l) plane. Hall mobility is significantly improved to ˜105 cm2 V-1 s-1 at room temperature in the (00l) plane due to texturing, resulting in higher electrical conductivity, a higher power factor of ˜18 μW cm-1 K-2 at room temperature, and also higher average ZT. This work shows that texturing is good for higher thermoelectric performance, suggesting that single crystals of n-type Mg3Sb2-based Zintl compounds are worth pursuing.

  2. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  3. Strain engineering of magnetic state in vacancy-doped phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jie [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhang, Chunxiao, E-mail: zhangchunxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Li, Jin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Guo, Zhixin [Department of Physics, Xiangtan University, Xiangtan 411105, Hunan (China); Xiao, Huaping, E-mail: hpxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhong, Jianxin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China)

    2016-09-23

    Inducing and manipulating the magnetism in two-dimensional materials play an important role for the development of the next-generation spintronics. In this letter, the effects of the biaxial strain on magnetic properties of vacancy-doped phosphorene are investigated using first-principles calculation. We find although only SV956 doping induces magnetism for unstrained phosphorene, the biaxial strain induces nonzero magnetic moment for SV5566 and DVa doped phosphorene. The biaxial strain also modulates the magnetic state for SV956, SV5566 and DVa doped phosphorene. The local magnetic moment derives from the spin polarization of the dangling bonds near the vacancy. The biaxial strain influences the local bonding configuration near the vacancy which determines the presence of dangling bonds, and then modulates the magnetic state. Our findings promise the synergistic effect of strain engineering and vacancy decoration is an effective method for the operation of phosphorene-based spintronic devices. - Highlights: • Investigation of the magnetic moment of vacancy-doped phosphorene by DFT calculation. • The modulation of the magnetic moment by the biaxial strain. • The analysis of the bonding configuration with the biaxial strain. • The analysis of the electronic structures to explain the evolution of the magnetic moment. • The effects of the biaxial strain on the band gap and doping levels.

  4. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  5. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  6. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

  7. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

  8. Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ.

    Science.gov (United States)

    Edmonds, Mark T; Hellerstedt, Jack; O'Donnell, Kane M; Tadich, Anton; Fuhrer, Michael S

    2016-06-29

    We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

  9. Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain

    KAUST Repository

    Amin, B.; Alshareef, Husam N.; Schwingenschlö gl, Udo; Singh, Nirpendra; Tritt, T. M.

    2013-01-01

    site generate n-type doping and thus improve the thermoelectric performance as compared to pristine SrTiO3. Further enhancement is achieved by the application of strain, for example, of the Seebeck coefficient by 21% for Sr0.95Pr0.05TiO3 and 10% for Sr

  10. Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence

    International Nuclear Information System (INIS)

    Reed, M.L.; Reed, M.J.; Jagannadham, K.; Verghese, K.; Bedair, S.M.; El-Masry, N.; Butler, J.E.

    2004-01-01

    A sample of 10 B isotope doped diamond was neutron irradiated to a thermal fluence of 1.3x10 19 neutron cm -2 . The diamond sample was cooled continuously during irradiation in a nuclear reactor. 7 Li is formed by nuclear transmutation reaction from 10 B. Characterization for electrical conductance in the temperature range of 160 K 10 B doped sample and the 10 B doped and irradiated sample. The unirradiated diamond sample showed p-type conductance at higher temperature (T>200 K) and p-type surface conductance at lower temperature (T 7 Li that is formed by nuclear transmutation reaction from 10 B atoms. Also, compensation of n-type carriers from 7 Li by p-type carriers from 10 B is used to interpret the conductance above 400 K. A low concentration of radiation induced defects, absence of defect complexes, and the low activation energy of n-type 7 Li are thought responsible for the observed variation of conductance in the irradiated diamond. The present results illustrate that neutron transmutation from 10 B doped diamond is a useful method to achieve n-type conductivity in diamond

  11. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N.; Khan, M. A.; Alshareef, Husam N.

    2013-01-01

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent

  12. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho; Han, Hyemi; Seo, Jooyeok; Song, Myeonghun; Kim, Hwajeong; Anthopoulos, Thomas D.; McCulloch, Iain; Bradley, Donal D C; Kim, Youngkyoo

    2016-01-01

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  13. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  14. Versatile and Tunable Transparent Conducting Electrodes Based on Doped Graphene

    KAUST Repository

    Mansour, Ahmed

    2016-01-01

    Herein, we explore non-covalent doping routes of CVD FLG, such as surface doping, intercalation and combination thereof, through in-depth and systematic characterization of the electrical transport properties and energy levels shifts. The intercalation of FLG with Br2 and FeCl3 is demonstrated, showing the highest improvements of the figure of merit of TCEs of any doping scheme, which results from up to a five-fold increase in conductivity while maintaining the transmittance within 3% of that for the pristine value. Importantly the intercalation yields TCEs that are air-stable, due to encapsulation of the intercalant in the bulk of FLG. Surface doping with novel solution-processed metal-organic molecular species (n- and p-type) is demonstrated with an unprecedented range of work function modulation, resulting from electron transfer and the formation of molecular surface dipoles. However, the conductivity increases compared modestly to intercalation as the electron transfer is limited to the uppermost graphene layers. Finally, a novel and universal multi-modal doping strategy is developed, thanks to the unique platform offered by FLG, where surface and intercalation doping are combined to mutually achieve high conductivity with an extended tunability of the work function. This work presents doped-FLG as a prospective and versatile candidate among emerging TCEs, given the need for efficient and stable doping routes capable of controllably tuning its properties to meet the criteria of a broad range of applications.

  15. Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

    Science.gov (United States)

    Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

    2018-07-01

    We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

  16. Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

    Science.gov (United States)

    Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

    2018-07-20

    We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

  17. Directional response of identifier Micro Detective ORTEC, N-type with 15% of detection efficiency

    International Nuclear Information System (INIS)

    Arbach, Mayara Nascimento; Karam, Rudnei M.; Cardoso, Domingos D.O.; Sant'anna, Viviane C.; Vellozo, Sergio de O.; Gomes, Renato G.; Amorim, Aneuri S. de; Oliveira, Luciano S.R.

    2016-01-01

    It was characterized the directional response of identifier Micro Detective ORTEC, N-type with 15% of detection efficiency by using sources of Cesium ("1"3"7Cs) with activity of 37,4 kBq and Cobalt ("6"0Co) with an activity of 41 kBq, manufactured on 04/17/2007. The work took place in distances (0,5m, 1,0m, 1,5m e 2,0m) and for the angles (0°, 45°, 60° e 90°), and the measure found in angle 0° of said evaluation was adopted as reference value; this same procedure was adopted for other distances evaluated in this work. The results achieved are provided in charts 1, 2 and 3. (author)

  18. A segmented, enriched N-type germanium detector for neutrinoless double beta-decay experiments

    Science.gov (United States)

    Leviner, L. E.; Aalseth, C. E.; Ahmed, M. W.; Avignone, F. T.; Back, H. O.; Barabash, A. S.; Boswell, M.; De Braeckeleer, L.; Brudanin, V. B.; Chan, Y.-D.; Egorov, V. G.; Elliott, S. R.; Gehman, V. M.; Hossbach, T. W.; Kephart, J. D.; Kidd, M. F.; Konovalov, S. I.; Lesko, K. T.; Li, Jingyi; Mei, D.-M.; Mikhailov, S.; Miley, H.; Radford, D. C.; Reeves, J.; Sandukovsky, V. G.; Umatov, V. I.; Underwood, T. A.; Tornow, W.; Wu, Y. K.; Young, A. R.

    2014-01-01

    We present data characterizing the performance of the first segmented, N-type Ge detector, isotopically enriched to 85% 76Ge. This detector, based on the Ortec PT6×2 design and referred to as SEGA (Segmented, Enriched Germanium Assembly), was developed as a possible prototype for neutrinoless double beta-decay measurements by the MAJORANA collaboration. We present some of the general characteristics (including bias potential, efficiency, leakage current, and integral cross-talk) for this detector in its temporary cryostat. We also present an analysis of the resolution of the detector, and demonstrate that for all but two segments there is at least one channel that reaches the MAJORANA resolution goal below 4 keV FWHM at 2039 keV, and all channels are below 4.5 keV FWHM.

  19. Solar Cells Based on Inks of n-Type Colloidal Quantum Dots

    KAUST Repository

    Ning, Zhijun; Dong, Haopeng; Zhang, Qiong; Voznyy, Oleksandr; Sargent, Edward H.

    2014-01-01

    © 2014 American Chemical Society. New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

  20. Beryllium implant activation and damage recovery study in n-type GaSb

    Science.gov (United States)

    Rahimi, N.; Behzadirad, M.; Renteria, Emma J.; Shima, D. M.; Muniz, Ayse J.; Busani, T.; Lavrova, Olga; Balakrishnan, G.; Lester, L. F.

    2014-03-01

    Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.

  1. Monte Carlo based geometrical model for efficiency calculation of an n-type HPGe detector

    Energy Technology Data Exchange (ETDEWEB)

    Padilla Cabal, Fatima, E-mail: fpadilla@instec.c [Instituto Superior de Tecnologias y Ciencias Aplicadas, ' Quinta de los Molinos' Ave. Salvador Allende, esq. Luaces, Plaza de la Revolucion, Ciudad de la Habana, CP 10400 (Cuba); Lopez-Pino, Neivy; Luis Bernal-Castillo, Jose; Martinez-Palenzuela, Yisel; Aguilar-Mena, Jimmy; D' Alessandro, Katia; Arbelo, Yuniesky; Corrales, Yasser; Diaz, Oscar [Instituto Superior de Tecnologias y Ciencias Aplicadas, ' Quinta de los Molinos' Ave. Salvador Allende, esq. Luaces, Plaza de la Revolucion, Ciudad de la Habana, CP 10400 (Cuba)

    2010-12-15

    A procedure to optimize the geometrical model of an n-type detector is described. Sixteen lines from seven point sources ({sup 241}Am, {sup 133}Ba, {sup 22}Na, {sup 60}Co, {sup 57}Co, {sup 137}Cs and {sup 152}Eu) placed at three different source-to-detector distances (10, 20 and 30 cm) were used to calibrate a low-background gamma spectrometer between 26 and 1408 keV. Direct Monte Carlo techniques using the MCNPX 2.6 and GEANT 4 9.2 codes, and a semi-empirical procedure were performed to obtain theoretical efficiency curves. Since discrepancies were found between experimental and calculated data using the manufacturer parameters of the detector, a detail study of the crystal dimensions and the geometrical configuration is carried out. The relative deviation with experimental data decreases from a mean value of 18-4%, after the parameters were optimized.

  2. Performance revaluation of a N-type coaxial HPGe detector with front edges crystal using MCNPX.

    Science.gov (United States)

    Azli, Tarek; Chaoui, Zine-El-Abidine

    2015-03-01

    The MCNPX code was used to determine the efficiency of a N-type HPGe detector after two decades of operation. Accounting for the roundedness of the crystal`s front edges and an inhomogeneous description of the detector's dead layers were shown to achieve better agreement between measurements and simulation efficiency determination. The calculations were experimentally verified using point sources in the energy range from 50keV to 1400keV, and an overall uncertainty less than 2% was achieved. In order to use the detector for different matrices and geometries in radioactivity, the suggested model was validated by changing the counting geometry and by using multi-gamma disc sources. The introduced simulation approach permitted the revaluation of the performance of an HPGe detector in comparison of its initial condition, which is a useful tool for precise determination of the thickness of the inhomogeneous dead layer. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Nuclear Spin relaxation mediated by Fermi-edge electrons in n-type GaAs

    Science.gov (United States)

    Kotur, M.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Namozov, B. R.; Pak, P. E.; Kusrayev, Yu. G.

    2014-03-01

    A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T 1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with n D = 9 × 1016 cm-3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T 1 with the change in magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.

  4. Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

    International Nuclear Information System (INIS)

    Zhong, Z.Q.; Wu, D.X.; Gong, M.; Wang, O.; Shi, S.L.; Xu, S.J.; Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2006-01-01

    Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S 1 , S 2 , S 3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S 1 , S 2 , S 3 disappeared at 500 deg. C. However, the well-known D 1 center was only detected for annealing temperatures over 700 deg. C. This experimental observation not only indicated that the defects S 1 , S 2 , S 3 were a set of primary defects and the D 1 center was a kind of secondary defect, but also showed that the D 1 center and the E 1 , E 2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin

  5. Phase diagram of a QED-cavity array coupled via a N-type level scheme

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Jiasen; Rossini, Davide [CNR, NEST, Scuola Normale Superiore and Istituto di Nanoscienze, Pisa (Italy); Fazio, Rosario [CNR, NEST, Scuola Normale Superiore and Istituto di Nanoscienze, Pisa (Italy); National University of Singapore, Center for Quantum Technologies, Singapore (Singapore)

    2015-01-01

    We study the zero-temperature phase diagram of a one-dimensional array of QED cavities where, besides the single-photon hopping, an additional coupling between neighboring cavities is mediated by an N-type four-level system. By varying the relative strength of the various couplings, the array is shown to exhibit a variety of quantum phases including a polaritonic Mott insulator, a density-wave and a superfluid phase. Our results have been obtained by means of numerical density-matrix renormalization group calculations. The phase diagram was obtained by analyzing the energy gaps for the polaritons, as well as through a study of two-point correlation functions. (orig.)

  6. Solar Cells Based on Inks of n-Type Colloidal Quantum Dots

    KAUST Repository

    Ning, Zhijun

    2014-10-28

    © 2014 American Chemical Society. New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

  7. Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

    2015-11-15

    N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

  8. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  9. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  10. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

    2018-04-01

    Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

  11. Silicon nanowire networks for multi-stage thermoelectric modules

    International Nuclear Information System (INIS)

    Norris, Kate J.; Garrett, Matthew P.; Zhang, Junce; Coleman, Elane; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2015-01-01

    Highlights: • Fabricated flexible single, double, and quadruple stacked Si thermoelectric modules. • Measured an enhanced power production of 27%, showing vertical stacking is scalable. • Vertically scalable thermoelectric module design of semiconducting nanowires. • Design can utilize either p or n-type semiconductors, both types are not required. • ΔT increases with thickness therefore power/area can increase as modules are stacked. - Abstract: We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stacking multiple nanowire thermoelectric devices in series is a scalable method to generate power by supplying larger temperature gradient. We present a vertically scalable multi-stage thermoelectric module design using semiconducting nanowires, eliminating the need for both n-type and p-type semiconductors for modules

  12. Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

    International Nuclear Information System (INIS)

    Rodriguez V, I.; Gaggero S, L.M.

    2004-01-01

    We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

  13. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  14. Growth and electrical characterization of Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As modulation-doped quantum wells with extremely low x

    Energy Technology Data Exchange (ETDEWEB)

    Gardner, Geoffrey C. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Watson, John D.; Mondal, Sumit [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Deng, Nianpei; Csathy, Gabor A. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2013-06-24

    We report on the growth and electrical characterization of modulation-doped Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns{sup -1} per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile {nu} = 5/2 and {nu} = 12/5 fractional quantum Hall states.

  15. Planar waveguide laser in Er/Al-doped germanosilicate

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin

    1999-01-01

    A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

  16. Photoacoustic investigation of doped InP using open cell configuration

    NARCIS (Netherlands)

    George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

    2002-01-01

    An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

  17. Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

    Science.gov (United States)

    Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

    2017-05-01

    The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

  18. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

    International Nuclear Information System (INIS)

    Simon, Roland B.; Anaya, Julian; Kuball, Martin

    2014-01-01

    The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates

  19. p-type doping by platinum diffusion in low phosphorus doped silicon

    Science.gov (United States)

    Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

    2003-07-01

    In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

  20. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  1. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

    International Nuclear Information System (INIS)

    Myronov, M.

    2001-04-01

    This thesis is a report on experimental investigations of magnetotransport, structural and optical properties of p-type modulation doped (MOD) heterostructures with Si 1-x Ge x channel of high Ge content (0.6 1-y Ge y /Si(001) virtual substrate (VS). The active layers of MOD heterostructures were grown by solid source molecular beam epitaxy (SS-MBE). The VSs were grown either by SS-MBE or low-pressure chemical vapour deposition (LP-CVD). The influence of thermal annealing on magnetotransport, structural and optical properties of Si 1-x Ge x /Si 1-y Ge y heterostructures was studied by performing the post growth furnace thermal annealing (FTA) treatments in the temperature range of 600-900C for 30min and rapid thermal annealing (RTA) treatments at temperature 750C for 30sec. Structural and optical analysis of p-type MOD Si 1-x Ge x /Si 1-y Ge y heterostructures involved the techniques of cross-sectional transmission electron microscopy, ultra low energy secondary ion mass spectrometry, photoluminescence spectroscopy, micro-Raman spectroscopy and scanning white-light interferometry. From the combinations of experimental results obtained by these techniques the Ge composition in the SiGe heteroepilayers, their thicknesses, state of strain in the heteroepilayers and dislocations microstructure in VSs were obtained. After post growth thermal annealing treatments were observed broadening of the Si 1-x Ge x channel accompanied with the reduction of Ge content in the channel and smearing of Si 1-x Ge x /Si 1-y Ge y interfaces. The Si 0.7 Ge 0.3 on low-temperature Si buffer VSs with very good structural properties were designed and grown by SS-MBE. These include: relatively thin 850nm total thickness of VS, 4-6nm Peak-to-Valley values of surface roughness, less than 10 5 cm -2 threading dislocations density and more than 95% degree of relaxation in the top layers of VS. The Hall mobility and sheet carrier density of as-grown and annealed p-type MOD Si 1-x Ge x /Si 1-y Ge y

  2. Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

    Directory of Open Access Journals (Sweden)

    Franz A. M. Koeck

    2017-12-01

    Full Text Available Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range. These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission. In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to

  3. Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field

    International Nuclear Information System (INIS)

    Huang, D.; Lyo, S.K.

    1999-01-01

    We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent

  4. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  5. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  6. Capacity spectroscopy of minority-carrier radiation traps in n-type silicon

    International Nuclear Information System (INIS)

    Kuchinskij, P.V.; Lomako, V.M.; Shakhlevich, L.N.

    1987-01-01

    Minority charge-carrier radiation traps in n-silicon, produced by neutron transmutation doping (NTD) and zone melting method, were studied using unsteady capacity spectroscopy method. Studying the parameters of defects, formed in the lower half of the restricted zone, was performed using minority carrier injection by forward current pulses. Samples were p + -n-structures, produced on the basis of silicon with different oxygen content. It is shown, that a trap with activation energy ≅E v +0.34 eV appears to be the main defect in oxygen p-silicon. Investigation into thermal stability has shown, that centers with E v +0.34 eV and E v +0.27 eV activation energies are annealed within the same temperature interval (300-400 deg C)

  7. Defect phase diagram for doping of Ga2O3

    OpenAIRE

    Stephan Lany

    2018-01-01

    For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have d...

  8. Transmutation doping and lattice defects in degenerate InSb

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Glaeser, W.

    1990-01-01

    n-type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov-de Haas effect and the resistivity ρ(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau-levels. They have to be interpreted by means of n-doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to T A = 400 K. (author)

  9. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Science.gov (United States)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  10. Health-enhancing doping controls

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    2010-01-01

    Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...

  11. Preparation and thermoelectric properties of sulfur doped Ag2Te nanoparticles via solvothermal methods.

    Science.gov (United States)

    Zhou, Wenwen; Zhao, Weiyun; Lu, Ziyang; Zhu, Jixin; Fan, Shufen; Ma, Jan; Hng, Huey Hoon; Yan, Qingyu

    2012-07-07

    In this work, n-type Ag(2)Te nanoparticles are prepared by a solvothermal approach with uniform and controllable sizes, e.g. 5-15 nm. The usage of dodecanethiol during the synthesis effectively introduces sulfur doping into the sample, which optimizes the charge carrier concentration of the nanoparticles to >1 × 10(20) cm(-3). This allows us to achieve the desired electrical resistivities of nanoparticles with effective sulphur doping show a maximum ZT value of ~0.62 at 550 K.

  12. Thermoelectric properties of Al doped Mg{sub 2}Si material

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  13. Co-doping with antimony to control phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  14. Positron annihilation measurements in high-energy alpha-irradiated n-type gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Sandip; Mandal, Arunava; SenGupta, Asmita [Visva-Bharati, Department of Physics, Santiniketan, West Bengal (India); Roychowdhury, Anirban [UGC-DAE Consortium for Scientific Research, Kolkata Centre, Kolkata, West Bengal (India)

    2015-07-15

    Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements have been carried out in 40-MeV alpha-irradiated n-type GaAs. After irradiation, the sample has been subjected to an isochronal annealing over temperature region of 25-800 C with an annealing time of 30 min at each set temperature. After each annealing, the positron measurements are taken at room temperature. Formation of radiation-induced defects and their recovery with annealing temperature are investigated. The lifetime spectra of the irradiated sample have been fitted with two lifetimes. The average positron lifetime τ{sub avg} = 244 ps at room temperature after irradiation indicates the presence of defects, and the value of τ{sub 2} (262 ps) at room temperature suggests that the probable defects are mono-vacancies. Two distinct annealing stages in τ{sub avg} at 400-600 C and at 650-800 C are observed. The variations in line-shape parameter (S) and defect-specific parameter (R) during annealing in the temperature region 25-800 C resemble the behaviour of τ{sub avg} indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 400 and 800 C. (orig.)

  15. Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

    Science.gov (United States)

    Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

    2018-04-01

    The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

  16. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  17. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  18. Optimization of the n-type HPGe detector parameters to theoretical determination of efficiency curves

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, A.; Correa-Alfonso, C.M.; Lopez-Pino, N.; Padilla-Cabal, F.; D'Alessandro, K.; Corrales, Y.; Garcia-Alvarez, J. A.; Perez-Mellor, A.; Baly-Gil, L.; Machado, A.

    2011-01-01

    A highly detailed characterization of a 130 cm 3 n-type HPGe detector, employed in low - background gamma spectrometry measurements, was done. Precise measured data and several Monte Carlo (MC) calculations have been combined to optimize the detector parameters. HPGe crystal location inside the Aluminum end-cap as well as its dimensions, including the borehole radius and height, were determined from frontal and lateral scans. Additionally, X-ray radiography and Computed Axial Tomography (CT) studies were carried out to complement the information about detector features. Using seven calibrated point sources ( 241 Am, 133 Ba, 57,60 Co, 137 Cs, 22 Na and 152 Eu), photo-peak efficiency curves at three different source - detector distances (SDD) were obtained. Taking into account the experimental values, an optimization procedure by means of MC simulations (MCNPX 2.6 code) were performed. MC efficiency curves were calculated specifying the optimized detector parameters in the MCNPX input files. Efficiency calculation results agree with empirical data, showing relative deviations lesser 10%. (Author)

  19. Performance revaluation of a N-type coaxial HPGe detector with front edges crystal using MCNPX

    International Nuclear Information System (INIS)

    Azli, Tarek; Chaoui, Zine-El-Abidine

    2015-01-01

    The MCNPX code was used to determine the efficiency of a N-type HPGe detector after two decades of operation. Accounting for the roundedness of the crystal's front edges and an inhomogeneous description of the detector's dead layers were shown to achieve better agreement between measurements and simulation efficiency determination. The calculations were experimentally verified using point sources in the energy range from 50 keV to 1400 keV, and an overall uncertainty less than 2% was achieved. In order to use the detector for different matrices and geometries in radioactivity, the suggested model was validated by changing the counting geometry and by using multi-gamma disc sources. The introduced simulation approach permitted the revaluation of the performance of an HPGe detector in comparison of its initial condition, which is a useful tool for precise determination of the thickness of the inhomogeneous dead layer. - Highlights: • Monte Carlo (MCNPX) simulation of an HPGe detector performance after more than two decades in use. • Investigating influence of detector rounded front edges of crystal. • Achieving good matching between Monte Carlo simulation and experiments by inhomogeneous description of detector dead layers

  20. Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

    Science.gov (United States)

    Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

    2017-07-01

    We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

  1. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  2. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    Science.gov (United States)

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  3. Embedding and electropolymerization of terthiophene derivatives in porous n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Badeva, Diyana, E-mail: diyana.badeva@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France); Tran-Van, Francois, E-mail: francois.tran@univ-tours.fr [Laboratoire de Physico-Chimie des Materiaux et des Electrolytes pour l' Energie (PCM2E), E.A 6299, Universite de Tours, Faculte des Sciences et Techniques, Parc de Grandmont, 37200 Tours (France); Beouch, Layla, E-mail: layla.beouch@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Chevrot, Claude, E-mail: claude.chevrot@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Markova, Ivania, E-mail: vania@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Racheva, Todora, E-mail: todora@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Froyer, Gerard, E-mail: gerard.froyer@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer Development of a mesoporous silicon with special morphological and chemical properties. Black-Right-Pointing-Pointer Successful embedding of carboxylic-acid terthiophenic monomer in porous silicon. Black-Right-Pointing-Pointer In situ electrochemical polymerization. Black-Right-Pointing-Pointer Polarized IRTF scattering provides the tendency to preferential organization. - Abstract: A mesoporous n-type silicon/poly (3 Prime -acetic acid-2,2 Prime -5 Prime ,2 Prime Prime terthiophene)-(Poly (3TAA) nanocomposite was elaborated in order to realize new components for optoelectronics. Non-oxidized and oxidized porous silicon substrates is used and their physical and chemical properties have been studied by different techniques such as transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). Terthiophene based conjugated structure has been successfully incorporated inside the pores by capillarity at the melting temperature of the monomer. The filling of the monomer into the porous volume was probed by energy dispersive X-ray spectroscopy (EDX). Polarized infrared absorption spectroscopy results indicated that the monomer molecules show preferential orientation along the pore axis, due to hydrogen bonding, in particular that of the carboxylic groups with silanol-rich oxidized porous silicon surface. The 3TAA monomer molecules embedded in porous silicon matrix were electrochemically polymerized in situ and resonance Raman scattering spectroscopy proved the above-mentioned polymerization.

  4. A clinical implementation of in vivo dosimetry with n-type Isorad semiconductor diodes

    Directory of Open Access Journals (Sweden)

    Rutonjski Laza M.

    2014-01-01

    Full Text Available The study was aimed to check the radiotherapy treatment accuracy and definition of action levels during implementation of in vivo dosimetry as a part of quality assurance program. The calibration and correction factors for in vivo entrance dose measurements for six n-type Isorad semiconductor diodes were determined as recommended by the European Society for Radiotherapy and Oncology Booklet No. 5. The patients for in vivo measurements have been divided in groups, according to the treatment site/techique, in order to investigate and detect the groups where the uncertainty was larger or where a systematic error occurred. The tolerance/action levels for all groups were also defined and checked. In this study, the entrance dose measurements were performed for total of 451 treatment fields, and 338 patients over one year period. The mean value and the standard deviation for different groups were: breast +1.0% ± 2.89%(1 SD, brain, and head and neck - +0.74% ± 2.04%(1 SD, and isocentric pelvis and abdomen - +0.1% ± 2.86%(1 SD. All measurements - +0.72% ± 2.64%(1 SD. In our experience, systematic in vivo dosimetry proved to be a very useful tool for quality assurance of patient's plan and treatment, both in detecting systematic errors and for estimating the accuracy of radiotherapy treatment delivery.

  5. Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

    International Nuclear Information System (INIS)

    Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

    2012-01-01

    Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

  6. Germanium-doped gallium phosphide obtained by neutron irradiation

    Science.gov (United States)

    Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

    1993-08-01

    Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

  7. Improving the electrical properties of graphene layers by chemical doping

    International Nuclear Information System (INIS)

    Khan, Muhammad Farooq; Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Eom, Jonghwa

    2014-01-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO 3 ) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO 3 . The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO 3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics. (paper)

  8. Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature.

    Science.gov (United States)

    Kim, Myeong-Ho; Lee, Young-Ahn; Kim, Jinseo; Park, Jucheol; Ahn, Seungbae; Jeon, Ki-Joon; Kim, Jeong Won; Choi, Duck-Kyun; Seo, Hyungtak

    2015-10-27

    The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature. In contrast to thermal or ionic hydrogen doping, ultraviolet exposure of the IGZO surface promotes a photochemical reaction with H radical incorporation to surface metal-OH layer formation and bulk H-doping which acts as a tunable and stable highly doped n-type doping channel and turns IGZO to a transparent conductor. This results in the total conversion of carrier conduction property to the level of metallic conduction with sheet resistance of ∼16 Ω/□, room temperature Hall mobility of 11.8 cm(2) V(-1) sec(-1), the carrier concentration at ∼10(20) cm(-3) without any loss of optical transparency. We demonstrated successful applications of photochemically highly n-doped metal oxide via optical dose control to transparent conductor with excellent chemical and optical doping stability.

  9. Gene doping in sports.

    Science.gov (United States)

    Unal, Mehmet; Ozer Unal, Durisehvar

    2004-01-01

    Gene or cell doping is defined by the World Anti-Doping Agency (WADA) as "the non-therapeutic use of genes, genetic elements and/or cells that have the capacity to enhance athletic performance". New research in genetics and genomics will be used not only to diagnose and treat disease, but also to attempt to enhance human performance. In recent years, gene therapy has shown progress and positive results that have highlighted the potential misuse of this technology and the debate of 'gene doping'. Gene therapies developed for the treatment of diseases such as anaemia (the gene for erythropoietin), muscular dystrophy (the gene for insulin-like growth factor-1) and peripheral vascular diseases (the gene for vascular endothelial growth factor) are potential doping methods. With progress in gene technology, many other genes with this potential will be discovered. For this reason, it is important to develop timely legal regulations and to research the field of gene doping in order to develop methods of detection. To protect the health of athletes and to ensure equal competitive conditions, the International Olympic Committee, WADA and International Sports Federations have accepted performance-enhancing substances and methods as being doping, and have forbidden them. Nevertheless, the desire to win causes athletes to misuse these drugs and methods. This paper reviews the current status of gene doping and candidate performance enhancement genes, and also the use of gene therapy in sports medicine and ethics of genetic enhancement. Copyright 2004 Adis Data Information BV

  10. P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

    Science.gov (United States)

    le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

    2018-05-01

    Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

  11. Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

    Science.gov (United States)

    Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

    2018-02-01

    Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

  12. Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

    Energy Technology Data Exchange (ETDEWEB)

    Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

    2001-07-01

    This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

  13. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  14. Identification of VanN-type vancomycin resistance in an Enterococcus faecium isolate from chicken meat in Japan.

    Science.gov (United States)

    Nomura, Takahiro; Tanimoto, Koichi; Shibayama, Keigo; Arakawa, Yoshichika; Fujimoto, Shuhei; Ike, Yasuyoshi; Tomita, Haruyoshi

    2012-12-01

    Five VanN-type vancomycin-resistant Enterococcus faecium strains were isolated from a sample of domestic chicken meat in Japan. All isolates showed low-level resistance to vancomycin (MIC, 12 mg/liter) and had the same pulsed-field gel electrophoresis profile. The vancomycin resistance was encoded on a large plasmid (160 kbp) and was expressed constitutively. The VanN-type resistance operon was identical to the first resistance operon to be reported, with the exception of a 1-bp deletion in vanT(N) and a 1-bp substitution in vanS(N).

  15. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.

    2014-05-12

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Defect phase diagram for doping of Ga2O3

    Science.gov (United States)

    Lany, Stephan

    2018-04-01

    For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

  17. Defect phase diagram for doping of Ga2O3

    Directory of Open Access Journals (Sweden)

    Stephan Lany

    2018-04-01

    Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

  18. Nitrogen-Doped Graphene for Photocatalytic Hydrogen Generation.

    Science.gov (United States)

    Chang, Dong Wook; Baek, Jong-Beom

    2016-04-20

    Photocatalytic hydrogen (H2 ) generation in a water splitting process has recently attracted tremendous interest because it allows the direct conversion of clean and unlimited solar energy into the ideal energy resource of H2 . For efficient photocatalytic H2 generation, the role of the photocatalyst is critical. With increasing demand for more efficient, sustainable, and cost-effective photocatalysts, various types of semiconductor photocatalysts have been intensively developed. In particular, on the basis of its superior catalytic and tunable electronic properties, nitrogen-doped graphene is a potential candidate for a high-performance photocatalyst. Nitrogen-doped graphene also offers additional advantages originating from its unique two-dimensional sp(2) -hybridized carbon network including a large specific surface area and exceptional charge transport properties. It has been reported that nitrogen-doped graphene can play diverse but positive functions including photo-induced charge acceptor/meditator, light absorber from UV to visible light, n-type semiconductor, and giant molecular photocatalyst. Herein, we summarize the recent progress and general aspects of nitrogen-doped graphene as a photocatalyst for photocatalytic H2 generation. In addition, challenges and future perspectives in this field are also discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Improved thermoelectric performance of n-type Ca and Ca-Ce filled skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Daniel R.; Liu, Chang; Ellison, Nicole D. [Optimal CAE, Plymouth, Michigan 48170 (United States); Salvador, James R.; Meyer, Martin S.; Haddad, Daad B. [General Motors Research and Development, Warren, Michigan 48090 (United States); Wang, Hsin; Cai, W. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2014-12-28

    Thermoelectric (TE) technology for use in automotive waste heat recovery is being advanced by General Motors with support from the US Department of Energy. Skutterudites are a very promising material for this application of TE technology due to their superior mechanical properties and good TE performance. Double-filled Yb{sub x}Ba{sub y}Co{sub 4}Sb{sub 12} with ZT values around 1.1 at 750 K are the best performing n-type skutterudites produced on a large scale using an economically viable approach of melt spinning (MS) in conjunction with spark plasma sintering (SPS). Another economical production method on the tons scale, the melt quench annealing (MQA) technique, has been recently claimed by Treibacher Industrie AG, further information is available [G. Rogl et al., Acta Mater. 76, 434–448 (2014)]. A possible hurdle to commercial implementation of these materials is the use of rare earths as the fillers to reduce thermal conductivity and improve the electrical transport properties. It will be shown herein that skutterudites double-filled with Ca and Ce, both of which are lower-cost fillers, display markedly different TE properties depending on whether they are produced by MQA or MS + SPS synthesis techniques. Ca and Ce double-filled skutterudites prepared by MS + SPS have TE properties that are superior to the same compositions prepared by MQA and that are comparable to the best performing Yb and Ba filled materials. Furthermore, the results of this study suggest that the unusually poor transport properties of MQA Ca-filled skutterudites can be ascribed to deleterious secondary phases, which is contrary to reports in the literature attempting to explain these irregularities via band structure features.

  20. Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

    Directory of Open Access Journals (Sweden)

    Ing-Song Yu

    2013-01-01

    Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

  1. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  2. Surface study of gallium- and aluminum- doped graphenes upon adsorption of cytosine: DFT calculations

    International Nuclear Information System (INIS)

    Shokuhi Rad, Ali; Zareyee, Daryoush; Peyravi, Majid; Jahanshahi, Mohsen

    2016-01-01

    Highlights: • P1 and P4 are the most stable adsorption configurations for cytosine. • NBO analysis show n-type semiconductor property for both Al- and Ga-doped graphenes. • Important changes in the HOMO and LUMO of doped graphene upon adsorption of cytosine. • Increase in the conductivity of system when cytosine is adsorbed on doped graphenes. - Abstract: The adsorption of cytosine molecule on Al- and Ga- doped graphenes is studied using first-principles density functional theory (DFT) calculations. The energetically most stable geometries of cytosine on both Al- and Ga- doped graphenes are determined and the adsorption energies are calculated. The net charge of transfer as well as local charge of doped atoms upon adsorption of cytosine are studied by natural bond orbitals (NBO) analysis. Orbital hybridizing of complexes was searched by frontier molecular orbital theory (FMO), and density of states (DOS). Depending on the side of cytosine, there are four possible sites for its adsorption on doped graphene; denoted as P1, P2, P3, and P4, respectively. The order of binding energy in the case of Al-doped graphene is found as P1 > P4 > P3 > P2. Interestingly, the order in the case of Ga-doped graphene changes to: P4 ∼ P1 > P3 > P2. Both surfaces show superior adsorbent property, resulting chemisorption of cytosine, especially at P1 and P4 position configurations. The NBO charge analysis reveals that the charge transfers from Al- and Ga- doped graphene sheets to cytosine. The electronic properties of both surfaces undertake important changes after cytosine adsorption, which indicates notable change in its electrical conductivity.

  3. Surface study of gallium- and aluminum- doped graphenes upon adsorption of cytosine: DFT calculations

    Energy Technology Data Exchange (ETDEWEB)

    Shokuhi Rad, Ali, E-mail: a.shokuhi@gmail.com [Department of Chemical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Zareyee, Daryoush [Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Peyravi, Majid; Jahanshahi, Mohsen [Faculty of Chemical Engineering, Babol University of Technology, Babol (Iran, Islamic Republic of)

    2016-12-30

    Highlights: • P1 and P4 are the most stable adsorption configurations for cytosine. • NBO analysis show n-type semiconductor property for both Al- and Ga-doped graphenes. • Important changes in the HOMO and LUMO of doped graphene upon adsorption of cytosine. • Increase in the conductivity of system when cytosine is adsorbed on doped graphenes. - Abstract: The adsorption of cytosine molecule on Al- and Ga- doped graphenes is studied using first-principles density functional theory (DFT) calculations. The energetically most stable geometries of cytosine on both Al- and Ga- doped graphenes are determined and the adsorption energies are calculated. The net charge of transfer as well as local charge of doped atoms upon adsorption of cytosine are studied by natural bond orbitals (NBO) analysis. Orbital hybridizing of complexes was searched by frontier molecular orbital theory (FMO), and density of states (DOS). Depending on the side of cytosine, there are four possible sites for its adsorption on doped graphene; denoted as P1, P2, P3, and P4, respectively. The order of binding energy in the case of Al-doped graphene is found as P1 > P4 > P3 > P2. Interestingly, the order in the case of Ga-doped graphene changes to: P4 ∼ P1 > P3 > P2. Both surfaces show superior adsorbent property, resulting chemisorption of cytosine, especially at P1 and P4 position configurations. The NBO charge analysis reveals that the charge transfers from Al- and Ga- doped graphene sheets to cytosine. The electronic properties of both surfaces undertake important changes after cytosine adsorption, which indicates notable change in its electrical conductivity.

  4. Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

    2012-12-30

    Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

  5. Thermal process induced change of conductivity in As-doped ZnO

    Science.gov (United States)

    Su, S. C.; Fan, J. C.; Ling, C. C.

    2012-02-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

  6. N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stability

    NARCIS (Netherlands)

    Shao, S.; Chen, Z.; Fang, H. -H.; ten Brink, G. H.; Bartesaghi, D.; Adjokatse, S.; Koster, L. J. A.; Kooi, B. J.; Facchetti, A.; Loi, M. A.

    2016-01-01

    We studied three n-type polymers of the naphthalenediimide-bithiophene family as electron extraction layers (EELs) in hybrid perovskite solar cells. The recombination mechanism in these devices is found to be heavily influenced by the EEL transport properties. The maximum efficiency of the devices

  7. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  8. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

    2016-01-01

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  9. Electrical Behavior on N-Type Dopants in AlGaAs Alloys: Shallow Levels and DX Centers

    Science.gov (United States)

    1990-11-01

    FORCE OFFICE OF SCIENTIFIC RESEARCH GRANT AFOSR-88-0316 EOSRD-LONDON DEPARTAMENTO DE INGENIERIA ELECTRONICA E.T.S. INGENIEROS DE TELECOMUNICACION ...INGENIEROS DE TELECOMUNICACION . MADRID OCTOBER 1990 2 ABSTRACT The electrical properties of n- type AlxGaixAs, for x > 0.2, are governed by deep donor

  10. Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

    International Nuclear Information System (INIS)

    Sethuraman, Kunjithapatham; Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu; Shin, Paikkyun

    2012-01-01

    Fluorinated copper-phthalocyanine (F 16 CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ FE ), the on/off current ratio (I on/off ), and the threshold voltage (V th ). A relatively high field effect mobility of 6.0 x 10 -3 cm 2 /Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10 4 and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F 16 CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F 16 CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F 16 CuPc-OFET was closely related to the crystallinity and the orientation of the F 16 CuPc thin film.

  11. P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

    Science.gov (United States)

    Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

    2017-09-01

    The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

  12. Modulation of transport properties of optimally doped La{sub 1.85}Sr{sub 0.15}CuO{sub 4} thin films via electric field modification of the grain boundaries

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, Muhammad Umair [Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Cavendish Laboratory, Cambridge (United Kingdom); Wimbush, Stuart C. [The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington (New Zealand)

    2015-09-15

    Modulation of the transport properties of a superconducting La{sub 1.85}Sr{sub 0.15}CuO{sub 4}-based ionic-liquid gated transistor has been achieved. For an applied gate bias V{sub g} ≥ 2 V, the characteristic sheet resistivity vs. temperature (R{sub s}-T) curves exhibit a fully reversible foot feature below the superconducting transition temperature (T{sub c}). In contrast to the behaviour expected from the large charge carrier density of this high-T{sub c} superconductor material, the normal state conductance above T{sub c} also exhibits a large modulation, indicating a larger charge screening length than that predicted from a simple Thomas-Fermi model. We regard these changes as due to electrostatic modification of the charge density at structural imperfections such as grain boundaries present within the sample. Such modification alters the coupling between superconducting domains and dictates the overall R{sub s}-T trend of the gated film. To explain our findings, we employ Mannhart's model of electronic band bending at the grain boundaries and propose that this band bending can be modulated by large electric fields resulting in the observed modulation of the transport properties of the device. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Ingenito, A.; Verheijen, M.A.; Isabella, O.; Zeman, M.; Kessels, W.M.M.

    2017-01-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly

  14. The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

    OpenAIRE

    Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I; Powell, Anthony V

    2017-01-01

    Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0 ≤ x ≤ 3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0 ≤ x ≤ 0.6) leads to a transition from metallic to n-type semiconducting behaviour at x = 0.5. Iron substitu...

  15. Nuclear spin-lattice relaxation in n -type insulating and metallic GaAs single crystals

    Science.gov (United States)

    Lu, J.; Hoch, M. J. R.; Kuhns, P. L.; Moulton, W. G.; Gan, Z.; Reyes, A. P.

    2006-09-01

    The coupling of electron and nuclear spins in n-GaAs changes significantly as the donor concentration n increases through the insulator-metal critical concentration nC˜1.2×1016cm-3 . The present measurements of the Ga71 relaxation rates W made as a function of magnetic field (1-13T) and temperature (1.5-300K) for semi-insulating GaAs and for three doped n-GaAs samples with donor concentrations n=5.9×1015 , 7×1016 , and 2×1018cm-3 , show marked changes in the relaxation behavior with n . Korringa-like relaxation is found in both metallic samples for T30K phonon-induced nuclear quadrupolar relaxation is dominant. The relaxation rate measurements permit determination of the electron probability density at Ga71 sites. A small Knight shift of -3.3ppm was measured on the most metallic (2×1018cm-3) sample using magic-angle spinning at room temperature. For the n=5.9×1015cm-3 sample, a nuclear relaxation model involving the Fermi contact hyperfine interaction, rapid spin diffusion, and exchange coupled local moments is proposed. While the relaxation rate behavior with temperature for the weakly metallic sample, n=7×1016cm-3 , is similar to that found for the just-insulating sample, the magnetic field dependence is quite different. For the 5.9×1015cm-3 sample, increasing the magnetic field leads to a decrease in the relaxation rate, while for the 7×1016cm-3 sample this results in an increase in the relaxation rate ascribed to an increase in the density of states at the Fermi level as the Landau level degeneracy is increased.

  16. The influence of carrier density and doping type on lithium insertion and extraction processes at silicon surfaces

    International Nuclear Information System (INIS)

    McSweeney, W.; Lotty, O.; Glynn, C.; Geaney, H.; Holmes, J.D.; O’Dwyer, C.

    2014-01-01

    The Li + insertion and extraction characteristics at n-type and p-type Si(100) electrodes with different carrier density and doping type are investigated by cyclic voltammetry and constant current measurements. The insertion and extraction potentials are demonstrated to vary with cycling and the occurrence of an activation effect is shown in n-type electrodes where the charge capacity and voltammetric currents are found to be much higher than p-type electrodes. A rate-dependent redox process influenced by the surface region electronic density, which influences the magnitude of cyclic voltammetry current is found at Si(100) surface regions during Li insertion and extraction. At p-type Si(100) surface regions, a thin, uniform film forms at lower currents, while also showing a consistently high (>70%) Coulombic efficiency for Li extraction. The p-type Si(100) surface region does not undergo crack formation after deintercalation and the amorphization was demonstrated using transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) and Raman scattering demonstrate that highly doped n-type Si(100) retains Li as a silicide and converts to an amorphous phase as a two-step phase conversion process. The findings show the succinct dependence of Li insertion and extraction processes for uniformly doped Si(100) single crystals and how the doping type and its effect on the semiconductor-solution interface dominate Li insertion and extraction, composition, crystallinity changes and charge capacity

  17. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  18. Sanctions for doping in sport

    Directory of Open Access Journals (Sweden)

    Mandarić Sanja

    2014-01-01

    Full Text Available Top-level sport imposes new and more demanding physical and psychological pressures, and the desire for competing, winning and selfassertion leads athletes into temptation to use prohibited substances in order to achieve the best possible results. Regardless of the fact that the adverse consequences of prohibited substances are well-known, prestige and the need to dominate sports arenas have led to their use in sports. Doping is one of the biggest issues in sport today, and the fight against it is a strategic objective on both global and national levels. World Anti-Doping Agency, the International Olympic Committee, international sports federations, national anti-doping agencies, national sports federations, as well as governments and their repressive apparatuses are all involved in the fight against doping in sport. This paper points to a different etymology and phenomenology of doping, the beginnings of doping in sport, sports doping scandals as well as the most important international instruments regulating this issue. Also, there is a special reference in this paper to the criminal and misdemeanor sanctions for doping in sport. In Serbia doping in sport is prohibited by the Law on Prevention of Doping in Sports which came into force in 2005 and which prescribes the measures and activities aimed at prevention of doping in sport. In this context, the law provides for the following three criminal offenses: use of doping substances, facilitating the use of doping substances, and unauthorized production and putting on traffic of doping substances. In addition, aiming at curbing the abuse of doping this law also provides for two violations. More frequent and repetitive doping scandals indicate that doping despite long-standing sanctions is still present in sports, which suggests that sanctions alone have not given satisfactory results so far.

  19. Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

    International Nuclear Information System (INIS)

    Moselund, K E; Ghoneim, H; Schmid, H; Bjoerk, M T; Loertscher, E; Karg, S; Signorello, G; Webb, D; Tschudy, M; Beyeler, R; Riel, H

    2010-01-01

    In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10 20 cm -3 , and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 deg. C) can be used to adjust the actual doping concentration in the range 2 x 10 18 to 10 20 cm -3 . Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I on /I off ratios of around 10 7 and, especially for the PMOS, good saturation behavior and low hysteresis.

  20. Passivation of Molecular n-Doping: Exploring the Limits of Air Stability

    KAUST Repository

    Tietze, Max Lutz; Rose, Bradley Daniel; Schwarze, Martin; Fischer, Axel; Runge, Steffen; Blochwitz-Nimoth, Jan; Lü ssem, Bjö rn; Leo, Karl; Bredas, Jean-Luc

    2016-01-01

    © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Molecular doping is a key technique for flexible and low-cost organic complementary semiconductor technologies that requires both efficient and stable p- and n-type doping. However, in contrast to molecular p-dopants, highly efficient n-type dopants are commonly sensitive to rapid degradation in air due to their low ionization energies (IEs) required for electron donation, e.g., IE = 2.4 eV for tetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidinato)ditungsten(II) (W2(hpp)4). Here, the air stability of various host:W2(hpp)4 combinations is compared by conductivity measurements and photoemission spectroscopy. A partial passivation of the n-doping against degradation is found, with this effect identified to depend on the specific energy levels of the host material. Since host-W2(hpp)4 electronic wavefunction hybridization is unlikely due to confinement of the dopant highest occupied molecular orbital (HOMO) to its molecular center, this finding is explained via stabilization of the dopant by single-electron transfer to a host material whose energy levels are sufficiently low for avoiding further charge transfer to oxygen-water complexes. Our results show the feasibility of temporarily handling n-doped organic thin films in air, e.g., during structuring of organic field effect transistors (OFETs) by lithography.

  1. Passivation of Molecular n-Doping: Exploring the Limits of Air Stability

    KAUST Repository

    Tietze, Max Lutz

    2016-03-03

    © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Molecular doping is a key technique for flexible and low-cost organic complementary semiconductor technologies that requires both efficient and stable p- and n-type doping. However, in contrast to molecular p-dopants, highly efficient n-type dopants are commonly sensitive to rapid degradation in air due to their low ionization energies (IEs) required for electron donation, e.g., IE = 2.4 eV for tetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidinato)ditungsten(II) (W2(hpp)4). Here, the air stability of various host:W2(hpp)4 combinations is compared by conductivity measurements and photoemission spectroscopy. A partial passivation of the n-doping against degradation is found, with this effect identified to depend on the specific energy levels of the host material. Since host-W2(hpp)4 electronic wavefunction hybridization is unlikely due to confinement of the dopant highest occupied molecular orbital (HOMO) to its molecular center, this finding is explained via stabilization of the dopant by single-electron transfer to a host material whose energy levels are sufficiently low for avoiding further charge transfer to oxygen-water complexes. Our results show the feasibility of temporarily handling n-doped organic thin films in air, e.g., during structuring of organic field effect transistors (OFETs) by lithography.

  2. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang

    2018-03-13

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  3. A Charge-Orbital Balance Picture of Doping in Colloidal Quantum Dot Solids

    KAUST Repository

    Voznyy, Oleksandr

    2012-09-25

    We present a framework-validated using both modeling and experiment-to predict doping in CQD films. In the ionic semiconductors widely deployed in CQD films, the framework reduces to a simple accounting of the contributions of the oxidation state of each constituent, including both inorganic species and organic ligands. We use density functional theory simulations to confirm that the type of doping can be reliably predicted based on the overall stoichiometry of the CQDs, largely independent of microscopic geometrical bonding configurations. Studies employing field-effect transistors constructed from CQDs that have undergone various chemical treatments, coupled with Rutherford backscattering and X-ray photoelectron spectroscopy to provide compositional analysis, allow us to test and confirm the proposed model in an experimental framework. We investigate both p- and n-type electronic doping spanning a wide range of carrier concentrations from 10 16 cm -3 to over 10 18 cm -3, and demonstrate reversible switching between p- and n-type doping by changing the CQD stoichiometry. We show that the summation of the contributions from all cations and anions within the film can be used to predict accurately the majority carrier type. The findings enable predictable control over majority carrier concentration via tuning of the overall stoichiometry. © 2012 American Chemical Society.

  4. Exciton states in GaAs δ-doped systems under magnetic fields and hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia)

    2013-04-15

    Excitons in GaAs n-type δ-doped quantum wells are studied taking into account the effects of externally applied magnetic fields as well as of hydrostatic pressure. The one-dimensional potential profile in both the conduction and valence bands is described including Hartree effects via a Thomas–Fermi-based local density approximation. The allowed uncorrelated energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions and a variational method is used to obtain the exciton states. The results are presented as functions of the two-dimensional doping concentration and the magnetic field strength for zero and finite values of the hydrostatic pressure. In general, it is found that the exciton binding energy is a decreasing function of the doping-density and an increasing function of the magnetic field intensity. A comparison with recent experiments on exciton-related photoluminescence in n-type δ-doped GaAs is made.

  5. Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

    Energy Technology Data Exchange (ETDEWEB)

    Gimbert, J

    1999-03-04

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  6. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

    2018-01-01

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  7. Specific features of recombination center formation under irradiation of dislocationless n-type Si

    International Nuclear Information System (INIS)

    Kolkovskij, I.I.; Lugakov, P.F.; Shusha, V.V.

    1989-01-01

    Peculiarities of recombination center formation during irradiation of non-dislocation n-Si, having so-called growth microdefects of different types - A,B,D, have been studied. Experimental results are obtained from the measurements in initial and irradiated by 60 Co γ-quanta (T irr ≤ 50 deg C) plates by the method of modulation of conductivity in point contact or by the drop in photoconductivity. On the basis of experimental data obtained the conclusion can be made that growth microdefects A-, B- and D-type do not produce any direct effect on the processes of accumulation of recombination and electrically active centers during irradiation. A decrease in the rate of E-center formation in crystals containing microdefects of A- and B-type observed in the experiment is related to the presence in their volume of impurity-defective accumulations of interstitial type presenting small inclusions of another phase surrounded by impurity atmosphere

  8. Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

    International Nuclear Information System (INIS)

    Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

    2014-01-01

    Stable n-doping of WSe 2 using thin films of SiN x deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN x act to dope WSe 2 thin flakes n-type via field-induced effect. The electron concentration in WSe 2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN x through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe 2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe 2 n-MOSFETs with a mobility of ∼70 cm 2 /V s

  9. Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

    2012-12-05

    Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

  10. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Science.gov (United States)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  11. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-01-01

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  12. Investigation of the optoelectronic behavior of Pb-doped CdO nanostructures

    Science.gov (United States)

    Eskandari, Abdollah; Jamali-Sheini, Farid; Cheraghizade, Mohsen; Yousefi, Ramin

    2018-03-01

    Un- and lead (Pb)-doped cadmium oxide (CdO) semiconductor nanostructures were synthesized by a sonochemical method to study their physical properties. The obtained X-ray diffraction (XRD) patterns indicated cubic CdO crystalline structures for all samples and showed that the crystallite size of CdO increases with Pb addition. Scanning electron microscopy (SEM) images of the nanostructures illustrated agglomerated oak-like particles for the Pb-doped CdO nanostructures. Furthermore, optical studies suggested that the emission band gap energy of the CdO nanostructures lies in the range of 2.27-2.38 eV and crystalline defects increase by incorporation of Pb atoms in the CdO crystalline lattice. In addition, electrical experiments declared that the n-type electrical nature of the un- and Pb-doped CdO nanostructures and the minimum of Pb atoms lead to a high carrier concentration.

  13. Effect of Sr doping on LaTiO3 thin films

    International Nuclear Information System (INIS)

    Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

    2005-01-01

    We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

  14. Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2

    Science.gov (United States)

    Singh, David J.; Parker, David

    2013-01-01

    Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds. PMID:24343332

  15. Itinerant magnetism in doped semiconducting β-FeSi₂ and CrSi₂.

    Science.gov (United States)

    Singh, David J; Parker, David

    2013-12-17

    Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi₂ and CrSi₂ at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.

  16. Performance degradation of integrated optical modulators due to electrical crosstalk

    NARCIS (Netherlands)

    Yao, W.; Gilardi, G.; Smit, M.K.; Wale, M.J.

    2016-01-01

    In this paper, we investigate electrical crosstalk in integrated Mach-Zehnder modulator arrays based on n-doped InP substrate and show that it can be the cause for transmitter performance degradations. In particular, a common ground return path between adjacent modulators can cause high coupling

  17. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

    International Nuclear Information System (INIS)

    Zhang, S.B.

    2002-01-01

    This paper reviews the recent developments in first-principles total energy studies of the phenomenological equilibrium 'doping limit rule' that governs the maximum electrical conductivity of semiconductors via extrinsic or intrinsic doping. The rule relates the maximum equilibrium carrier concentrations (electrons or holes) of a wide range of materials to their respective band alignments. The microscopic origin of the mysterious 'doping limit rule' is the spontaneous formation of intrinsic defects: e.g., in n-type semiconductors, the formation of cation vacancies. Recent developments in overcoming the equilibrium doping limits are also discussed: it appears that a common route to significantly increase carrier concentrations is to expand the physically accessible range of the dopant atomic chemical potential by non-equilibrium doping processes, which not only suppresses the formation of the intrinsic defects but also lowers the formation energy of the impurities, thereby significantly increasing their solubility. (author)

  18. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-01-01

    SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

  19. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  20. Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

    Science.gov (United States)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-01

    SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  1. Facile synthesis of antimony-doped tin oxide nanoparticles by a polymer-pyrolysis method

    International Nuclear Information System (INIS)

    Li, Yuan-Qing; Wang, Jian-Lei; Fu, Shao-Yun; Mei, Shi-Gang; Zhang, Jian-Min; Yong, Kang

    2010-01-01

    In this article, antimony-doped tin oxide (ATO) nanoparticles was synthesized by a facile polymer-pyrolysis method. The pyrolysis behaviors of the polymer precursors prepared via in situ polymerization of metal salts and acrylic acid were analyzed by simultaneous thermogravimetric and differential scanning calorimetry (TG-DSC). The structural and morphological characteristics of the products were studied by powder X-ray diffraction (XRD) and transmission electron microscope (TEM). The results reveal that the ATO nanoparticles calcined at 600 o C show good crystallinity with the cassiterite structure and cubic-spherical like morphology. The average particle size of ATO decreases from 200 to 15 nm as the Sb doping content increases from 5 mol% to 15 mol%. Electrical resistivity measurement shows that the resistivity for the 10-13 mol% Sb-doped SnO 2 nanoparticles is reduced by more than three orders compared with the pure SnO 2 nanoparticles. In addition, due to its versatility this polymer-pyrolysis method can be extended to facile synthesis of other doped n-type semiconductor, such as In, Ga, Al doped ZnO, Sn doped In 2 O 3 .

  2. 279 Watt Metal-Wrap-Through module using industrial processes

    Energy Technology Data Exchange (ETDEWEB)

    Guillevin, N.; Heurtault, B.; Geerligs, L.J.; Anker, J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Berkeveld, L.D.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, PO Box 1, 1755 ZG Petten (Netherlands); Wenchao, Zhao; Jianming, Wang; Ziqian, Wang; Yingle, Chen; Yanlong, Shen; Zhiyan, Hu; Gaofei, Li; Jianhui, Chen; Bo, Yu; Shuquan, Tian; Jingfeng, Xiong [Yingli Solar, 3399 Chaoyang North Street, Baoding (China)

    2012-09-15

    This paper describes results of metal wrap through (MWT) cells produced from n-type Czochralski silicon wafers, and modules produced from those cells. The use of n-type silicon as base material allows for high efficiencies: for front emitter contacted industrial cells, efficiencies up to 20% have been reported. MWT cells allow even higher cell efficiency due to reduced front metal coverage, and additionally full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. MWT cells were produced by industrial process technologies. The efficiency of the MWT cells reproducibly exceeds the efficiency of front contact cells based on the same technology by about 0.2-0.3%, and routes for further improvement are analyzed. 60-cell modules were produced from both types of cells (MWT and H-pattern front emitter). In a direct module performance comparison, the MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter contact module. CTM current differences arise from the higher packing density, and in this experiment from a lower reflectance of the backfoil, in MWT modules. CTM FF differences are related to resistive losses in copper circuitry on the backfoil versus tabs. The CTM FF loss of the MWT module was reduced by 2.2%abs compared to the tabbed front emitter contact module. Finally, simple process optimizations were tested to improve the n-type MWT cell and module efficiency. A module made using MWT cells of 19.6% average efficiency resulted in a power output of 279W. The cell and module results are analyzed and routes for improvements are discussed.

  3. Comprehensive phase diagram of two-dimensional space charge doped Bi2Sr2CaCu2O8+x.

    Science.gov (United States)

    Sterpetti, Edoardo; Biscaras, Johan; Erb, Andreas; Shukla, Abhay

    2017-12-12

    The phase diagram of hole-doped high critical temperature superconductors as a function of doping and temperature has been intensively studied with chemical variation of doping. Chemical doping can provoke structural changes and disorder, masking intrinsic effects. Alternatively, a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. However, to probe the phase diagram, carrier density modulation beyond 10 14  cm -2 and transport measurements performed over a large temperature range are needed. Here we use the space charge doping method to measure transport characteristics from 330 K to low temperature. We extract parameters and characteristic temperatures over a large doping range and establish a comprehensive phase diagram for one-unit-cell-thick BSCCO-2212 as a function of doping, temperature and disorder.

  4. Role of oxygen in enhancing N-type conductivity of CuInS2 thin films

    International Nuclear Information System (INIS)

    Rabeh, M. Ben; Kanzari, M.; Rezig, B.

    2007-01-01

    Post-growth treatments in air atmosphere were performed on CuInS 2 films prepared by the single-source thermal evaporation method. Their effect on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical reflection and transmission and resistance measurements. The films were annealed from 100 to 350 deg. C in air. The stability of the observed N-type conductivity after annealing depends strongly on the annealing temperature. Indeed it is shown that for annealing temperatures above 200 deg. C the N-type conductivity is stable. The resistance of the N-CuInS 2 thin films correlates well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV

  5. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  6. Characterization of the first true coaxial 18-fold segmented n-type prototype HPGe detector for the gerda project

    International Nuclear Information System (INIS)

    Abt, I.; Caldwell, A.; Gutknecht, D.; Kroeninger, K.; Lampert, M.; Liu, X.; Majorovits, B.; Quirion, D.; Stelzer, F.; Wendling, P.

    2007-01-01

    The first true coaxial 18-fold segmented n-type HPGe prototype detector produced by Canberra-France for the GERDA neutrinoless double beta-decay project was tested both at Canberra-France and at the Max-Planck-Institut fur Physik in Munich. The main characteristics of the detector are given and measurements concerning detector properties are described. A novel method to establish contacts between the crystal and a Kapton cable is presented

  7. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    International Nuclear Information System (INIS)

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-01-01

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication

  8. Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

    International Nuclear Information System (INIS)

    Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

    2015-01-01

    Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

  9. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  10. Quantum dot laser optimization: selectively doped layers

    Science.gov (United States)

    Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

    2016-08-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

  11. Quantum dot laser optimization: selectively doped layers

    International Nuclear Information System (INIS)

    Korenev, Vladimir V; Konoplev, Sergey S; Savelyev, Artem V; Shernyakov, Yurii M; Maximov, Mikhail V; Zhukov, Alexey E

    2016-01-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics. (paper)

  12. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-06-03

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  13. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  14. The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

    NARCIS (Netherlands)

    Bock, R.; Schmidt, J.; Mau, S.; Hoex, B.; Kessels, W.M.M.; Brendel, R.

    2009-01-01

    Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the

  15. Highly n -doped graphene generated through intercalated terbium atoms

    Science.gov (United States)

    Daukiya, L.; Nair, M. N.; Hajjar-Garreau, S.; Vonau, F.; Aubel, D.; Bubendorff, J. L.; Cranney, M.; Denys, E.; Florentin, A.; Reiter, G.; Simon, L.

    2018-01-01

    We obtained highly n -type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the K points of the Brillouin zone: the well-known conical dispersion band of a graphene monolayer was superposed by a second conical dispersion band of a graphene monolayer with an electron density reaching 1015cm-2 . In addition, we demonstrate that atom intercalation proceeds either below the buffer layer or between the buffer layer and the monolayer graphene. The intercalation of terbium below a pure buffer layer led to the formation of a highly n -doped graphene monolayer decoupled from the SiC substrate, as evidenced by ARPES and x-ray photoelectron spectroscopy measurements. The band structure of this highly n -doped monolayer graphene showed a kink (a deviation from the linear dispersion of the Dirac cone), which has been associated with an electron-phonon coupling constant one order of magnitude larger than those usually obtained for graphene with intercalated alkali metals.

  16. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  17. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  18. BLOOD DOPING AND RISKS

    Directory of Open Access Journals (Sweden)

    Goran Vasić

    2015-05-01

    Full Text Available Doping is the way in which athletes misuse of chemicals and other types of medical interventions (eg, blood replacement, try to get ahead in the results of other athletes or their performance at the expense of their own health. The aim of this work is the analysis of blood doping and the display of negative consequences that this way of increasing capabilities brings. Method: The methodological work is done descriptively. Results: Even in 1972 at the Stockholm Institute for gymnastics and sport, first Dr. Bjorn Ekblom started having blood doping. Taken from the blood, athletes through centifuge separating red blood cells from blood plasma, which is after a month of storage in the fridge, every athlete back into the bloodstream. Tests aerobic capacity thereafter showed that the concerned athletes can run longer on average for 25% of the treadmill than before. Discussion: Blood doping carries with it serious risks, excessive amount of red cells “thickens the blood,” increased hematocrit, which reduces the heart’s ability to pump blood to the periphery. All this makes it difficult for blood to flow through blood vessels, and there is a great danger that comes to a halt in the circulation, which can cause cardiac arrest, stroke, pulmonary edema, and other complications that can be fatal.

  19. Doped barium titanate nanoparticles

    Indian Academy of Sciences (India)

    Wintec

    nese doped BaTiO3 ceramics, sintered at 1400°C in air, changes from tetragonal to hexagonal between 0⋅5 and. 1⋅7 mole% of manganese (Langhammer et al 2000). As a driving force of the transformation from the cubic to the hexagonal crystal structure, the influence of the Jahn–. Teller distortion is proposed. The grain ...

  20. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.