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Sample records for n-type delta-doped si

  1. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

  2. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  3. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  4. Nonlinear intersubband optical absorption of Si {delta}-doped GaAs under an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, Hasan; Tomak, Mehmet [Middle East Technical University, Department of Physics, Ankara 06531 (Turkey)

    2006-10-15

    We study the nonlinear intersubband optical absorption of a single Si {delta}-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schroedinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed within the framework of the density matrix formulation for various electric field strengths, well widths, and sheet thicknesses in which Si atoms are distributed uniformly. We include both the depolarization and exciton shifts in calculations. The depolarization effect not only shifts the peak value but also makes the nonlinear absorption spectrum strongly asymmetric with the increasing intensity of the optical field. The blue-shift associated with the depolarization shift is decreased when the intensity is increased. The absorption line shape becomes more asymmetric at smaller well widths and thicker doping layers. The electric field restores the symmetry of the absorption line shape at larger well widths and thinner doping layers, but it decreases the peak value of the line shape. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Hole-level structure of double {delta}-doped quantum wells in Si: The influence of the split-off band

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62210 Cuernavaca, Mor. (Mexico); Gaggero-Sager, L.M. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62210 Cuernavaca, Mor. (Mexico)]. E-mail: lgaggero@buzon.uaem.mx

    2007-02-15

    We present the electronic structure calculation of two closely p-type {delta}-doped quantum wells within the lines of the Thomas-Fermi-Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density of the {delta}-doped wells is varied. The exchange effects are also considered in the present study. We have paid special attention to the split-off band and its influence on the subband hole levels. We also calculate the mobility ratio of double {delta}-doped (DDD) quantum wells in Si with respect to a single {delta}-doped (SDD) one, finding the optimum distance between the wells for maximum mobility. Our results are in a good agreement with respect to the experimental data available.

  6. Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

    2009-05-01

    We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

  7. Measurement of mesoscopic Si:P delta-doped devices fabricated by rapid STM hydrogen depassivation lithography via field-emission

    Science.gov (United States)

    Rudolph, M.; Carr, S. M.; Subramania, G.; Ten Eyck, G.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Bussmann, E.

    2014-03-01

    Recently, a method to fabricate nanoelectronic and quantum devices has been developed that utilizes scanning tunneling microscopy (STM) to place dopants (P) into Si with deterministic atomic-precision. Dopant placement is achieved via STM hydrogen depassivation lithography (HDL). Typically HDL is performed in a low-voltage tunneling mode where electrons desorb one H at a time, which requires extremely slow scan rates. Here, we introduce a high-voltage field-emission HDL, increasing patterning scan rate by an order of magnitude. Using the field-emission mode, we fabricated several HDL-patterned Si:P delta-doped devices, including a microscale multi-terminal Hall Effect device and a nanoscale quantum point contact. Low temperature transport measurements of the Hall device reveal a dopant density of 1014 cm-2, resistance of 2 k Ω/square, and mobility of 30 cm2/Vs. The quantum point contact showed a blockaded voltage range of 80 mV, comparable to other similar devices patterned using conventional HDL. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  8. Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

    Science.gov (United States)

    Takagishi, Hideyuki; Masuda, Takashi; Yamazaki, Ken; Shimoda, Tatsuya

    2018-01-01

    Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10-3Ω ṡ cm, which is comparable to the specific resistance of flat n-type poly-Si films.

  9. Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Hansen, Jørn Bindslev

    1996-01-01

    By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation...

  10. Air-stable n-type doping of graphene from overlying Si3N4 film

    International Nuclear Information System (INIS)

    Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

    2014-01-01

    In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.

  11. Terahertz radiation from delta-doped GaAs

    DEFF Research Database (Denmark)

    Birkedal, Dan; Hansen, Ole; Sørensen, Claus Birger

    1994-01-01

    Terahertz pulse emission from four different delta-doped molecular beam epitaxially grown GaAs samples is studied. We observe a decrease of the emitted THz pulse amplitude as the distance of the delta-doped layer from the surface is increased, and a change in polarity of the THz pulses as compare...

  12. Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2017-12-01

    A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

  13. High rate performance of virus enabled 3D n-type Si anodes for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Chen Xilin [Department of Chemical and Biomolecular Engineering, University of Maryland College Park, MD 20742 (United States); Gerasopoulos, Konstantinos [Department of Materials Science and Engineering, Institute for Systems Research, Department of Electrical and Computer Engineering, University of Maryland College Park, MD 20742 (United States); Guo Juchen [Department of Chemical and Biomolecular Engineering, University of Maryland College Park, MD 20742 (United States); Brown, Adam [Institute for Bioscience and Biotechology Research, Department of Plant Science and Landscape Architecture, University of Maryland College Park, MD 20742 (United States); Ghodssi, Reza [Department of Materials Science and Engineering, Institute for Systems Research, Department of Electrical and Computer Engineering, University of Maryland College Park, MD 20742 (United States); Culver, James N. [Institute for Bioscience and Biotechology Research, Department of Plant Science and Landscape Architecture, University of Maryland College Park, MD 20742 (United States); Wang Chunsheng, E-mail: cswang@umd.edu [Department of Chemical and Biomolecular Engineering, University of Maryland College Park, MD 20742 (United States)

    2011-05-30

    Research highlights: > A novel three-dimensional Tobacco mosaic virus (TMV) assembled n-type silicon anode is reported for the first time. > The combination of the large surface area conferred by the virus-enabled 3D Ni/TMV1cys current collector with the high electric conductivity of n-type Si rods results in excellent cyclic stability and rate capability for the core-shell n-type Si/Ni/TMV1cys anodes. > Electrochemical impedance spectroscopy reveals that the high electronic conductivity of n-type Si significantly reduces charge transfer resistance, thus even at high C-rates the capacity of the n-type Si is increased to almost 1000 mAh/g compared to undoped Si. - Abstract: A patterned 3D Si anode is fabricated by physical vapor deposition of n-type Si on a self-assembled TMV1cys-structured nickel current collector. The combination of the large surface area conferred by the virus-enabled 3D Ni/TMV1cys current collector with the high electric conductivity of n-type Si rods results in excellent cyclic stability and rate capability for the core-shell n-type Si/Ni/TMV1cys anodes. Electrochemical impedance spectroscopy reveals that the high electronic conductivity of n-type Si significantly reduces charge transfer resistance, thus even at high current densities the capacity of the n-type Si is increased to almost 630 mAh/g compared to undoped Si.

  14. Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

    Science.gov (United States)

    Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

    2017-07-01

    We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

  15. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  16. Layered structures with delta-doped layers for enhancement of field emission

    International Nuclear Information System (INIS)

    Evtukh, A.A.; Litovchenko, V.G.; Marchenko, R.I.; Kydzinovski, S.Y.

    1997-01-01

    The electron field emission, from silicon tip arrays with layer structures on their surfaces, was investigated. The main task of the study was to enhance field emission. The n Si SiO 2 , n Si Cs SiO 2 , n Si SiO 2 Si * SiO 2 , n Si Si 3 N 4 Si * SiO 2 , etc., were among the different prepared layered structures. The thicknesses of dielectric layers were 1 5 nm and they were prepared both by thermal oxidation and by chemical vapor deposition (CVD). The cesium was deposited on the cathodes with the application of cesium salt (CsCl) in solution. The outer SiO 2 layer prevents cesium from evaporating during heating or reaction under exposure to gases. The thin silicon layer (Si * ) was formed by CVD. The measurements of electron field emission from layered structures show sufficient enhancement of emission in the case of using the delta-doped cesium layer. The incorporation of cesium is an important way to decrease the threshold voltage of cold cathodes, and in our case the use of a SiO 2 layer allows us to stabilize the emission. copyright 1997 American Vacuum Society

  17. Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers

    Science.gov (United States)

    Agarwala, S.; Tong, M.; Ballegeer, D. G.; Nummila, K.; Ketterson, A. A.; Adesida, I.

    1993-04-01

    The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared with those of corresponding conventionally doped MODFETs. Hall measurements were conducted at 300 and 77 K to characterize the change in the transport properties of the two-dimensional electron gas due to low energy ion bombardment during the SRIE process. Delta-doped structures showed a smaller change in sheet carrier density and mobility compared to conventionally doped structures. Direct current and high frequency measurements were performed on the SRIE gate-recessed MODFETs. No significant change in threshold voltage was observed for the delta-doped MODFETs in contrast to an increase of about 300 mV for the conventionally doped MODFETs processed at a plasma self-bias voltage of -90 V and a 1200% overetch time. Maximum dc extrinsic transconductance and unity current gain cutoff frequency did not change with SRIE processing for either of the structures.

  18. Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects

    International Nuclear Information System (INIS)

    Restrepo, R.L.; Morales, A.L.; Martínez-Orozco, J.C.; Baghramyan, H.M.; Barseghyan, M.G.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2p z -like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum

  19. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    Directory of Open Access Journals (Sweden)

    J. Q. Liu

    2015-11-01

    Full Text Available This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm2 at 425 oC. Scanning electron microscopy (SEM reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  20. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Fan, J.; Tu, L. C., E-mail: tlc@hust.edu.cn [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Institute of Geophysics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  1. Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity

    Science.gov (United States)

    Herasimenka, Stanislau Y.; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart G.

    2013-10-01

    The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at corona charging of SiNx is presented. textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using 60 ms on 5000 Ω-cm and 20.9 ms on 1.7 Ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.

  2. Progress in N-type Si Solar Cell and Module Technology for High Efficiency and Low Cost

    Energy Technology Data Exchange (ETDEWEB)

    Song, Dengyuan; Xiong, Jingfeng; Hu, Zhiyan; Li, Gaofei; Wang, Hongfang; An, Haijiao; Yu, Bo; Grenko, Brian; Borden, Kevin; Sauer, Kenneth; Cui, Jianhua; Wang, Haitao [Yingli Green Energy Holding Co., LTD, 071051 Boading (China); Roessler, T. [Yingli Green Energy Europe GmbH, Heimeranstr. 37, 80339 Munich (Germany); Bultman, J. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Vlooswijk, A.H.G.; Venema, P.R. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands)

    2012-06-15

    A novel high efficiency solar cell and module technology, named PANDA, using crystalline n-type CZ Si wafers has moved into large-scale production at Yingli. The first commercial sales of the PANDA modules commenced in mid 2010. Up to 600MW of mass production capacity from crystal-Si growth, wafer slicing, cell processing and module assembly have been implemented by the end of 2011. The PANDA technology was developed specifically for high efficiency and low cost. In contrast to the existing n-type Si solar cell manufacturing methods in mass production, this new technology is largely compatible with a traditional p-type Si solar cell production line by conventional diffusion, SiNx coating and screen-printing technology. With optimizing all technologies, Yingli's PANDA solar cells on semi-square 6-inch n-type CZ wafers (cell size 239cm{sup 2}) have been improved to currently have an average efficiency on commercial production lines exceeding 19.0% and up to 20.0% in pilot production. The PANDA modules have been produced and were certified according to UL1703, IEC 61215 and IEC 61730 standards. Nearly two years of full production on scale-up lines show that the PANDA modules have a high efficiency and power density, superior high temperature performance, near zero initial light induced degradation, and excellent efficiency at low irradiance.

  3. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  4. Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Chin, Yi-Min

    2014-01-01

    A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO 2 ) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO 2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT

  5. Road to Grid Parity through Deployment of Low-Cost 21.5% N-Type Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Velundur, Vijay [Suniva, Norcross, GA (United States)

    2017-04-19

    This project seeks to develop and deploy differentiated 21.5% efficient n-type Si solar cells while reaching the SunShot module cost goal of ≤ $0.50/W. This objective hinges on development of enabling low cost technologies that simplify the manufacturing process and reduce overall processing costs. These comprise of (1) Boron emitter formation and passivation; (2) Simplified processing process for emitter and BSF layers; and (3) Advanced metallization for the front and back contacts.

  6. HIT Solar Cells with N-Type Low-Cost Metallurgical Si

    Directory of Open Access Journals (Sweden)

    Xing Yang

    2018-01-01

    Full Text Available A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

  7. Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC.

    Science.gov (United States)

    Dietmueller, Roland; Nesswetter, Helmut; Schoell, Sebastian J; Sharp, Ian D; Stutzmann, Martin

    2011-11-01

    The exact band alignment at organic/inorganic semiconductor heterojunctions is influenced by a variety of properties and is difficult to predict. For organic/inorganic bilayer heterojunctions made of poly(3-hexylthiophene) (P3HT) and n-type 6H-SiC, the band alignment is determined via current-voltage measurements. For this purpose, a model equivalent circuit, combining thermionic emission and space-charge-limited current effects, is proposed which describes the behavior of the heterojunction very well. From the fitting parameters, an interface barrier height of 1.1 eV between the lowest unoccupied molecular orbital (LUMO) of P3HT and the conduction band (CB) of 6H-SiC is determined. In addition, from the maximum open circuit voltage of 6H-SiC/P3HT diodes, a difference of 0.9 eV between the highest occupied molecular orbital (HOMO) of P3HT and the CB of 6H-SiC is deduced. These two values determine the alignment of the energy bands of 6H-SiC relative to the HOMO and LUMO of P3HT. The 6H-SiC/P3HT bilayer heterojunction exhibits an open circuit voltage of ~0.5 V at room temperature, which makes such a materials system a potential candidate for bulk heterojunction hybrid solar cells with 6H-SiC nanoparticles.

  8. Thermoelectric Properties Prediction of n-Type Mg2Si1- x Sn x Compounds by First Principles Calculation

    Science.gov (United States)

    Li, Xin; Li, Shuangming; Feng, Songke; Zhong, Hong

    2018-02-01

    A comprehensive analysis has been made of the n-type Mg2Si1 - x Sn x (0.25 ≤ x ≤ 0.75) compounds by the first principles calculation method. The calculated band structures in n-type Mg2Si1 - x Sn x show the conduction band convergence directly. This convergence in energy at x = 0.625 can enhance the Seebeck coefficient of the solid solution in comparison with other Sn contents. The Seebeck coefficient of Mg2Si0.375Sn0.625 could reach - 246 μV K-1 at the optimal doping density of 3 × 1020 cm-3. The enhancement of the Seebeck coefficient in the Mg2Si0.375Sn0.625 alloy results in a higher power factor of 6.2 mW m-1 K-2 at T = 550 K, and the predicted figure of merit is 1.53 at T = 700 K. Additionally, the ZT values can be maintained larger than 1.4 in a wide temperature range from 550 K to 800 K.

  9. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  10. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2017-03-01

    Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

  11. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Željko, E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Capan, Ivana [Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb (Croatia); Cohen, David D. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Forneris, Jacopo [Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Iwamoto, Naoya; Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Siegele, Rainer [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Hoshino, Norihiro; Tsuchida, Hidekazu [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 10{sup 14} cm{sup −3}) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He{sup 2+} ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z{sub 1/2} center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10{sup 11} cm{sup −2}.

  12. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  13. Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

    International Nuclear Information System (INIS)

    He, Guan-Ru; Lin, Yow-Jon; Chang, Hsing-Cheng; Chen, Ya-Hui

    2012-01-01

    The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H 2 O 2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H 2 O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi x O y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H 2 O 2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. - Highlights: ► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched. ► The n-ZnO/p-Si diode without H 2 O 2 treatment showed a poor rectifying behavior. ► The n-ZnO/H 2 O 2 -treated p-Si diode showed a good rectifying behavior. ► The enhanced responsivity can be interpreted by the device rectifying performance.

  14. Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering

    Science.gov (United States)

    Nopparuchikun, Adison; Promros, Nathaporn; Teakchaicum, Sakmongkon; Onsee, Peeradon; Duangrawa, Asanlaya; Sittimart, Phongsaphak

    2017-06-01

    Heterojunctions composed of n-type β-FeSi2 thin films and p-type Si(111) substrates were formed by radio frequency magnetron sputtering at an Ar pressure of 2.66 × 10-1 Pa at a substrate temperature of 560 °C. The current density-voltage (J-V) curves of the heterojunctions measured in the dark and under illumination at room temperature showed a large leakage current under reverse bias conditions and a weak response to near-infrared (NIR) light irradiation. From the results of the analysis of dark forward J-V curves, the dominant carrier transport mechanisms at V ≤ 0.15 V and V > 0.15 V were considered a recombination process and a space-charge-limited current process, respectively. Both capacitance-voltage and conductance-voltage characteristics at room temperature were measured and analyzed as a function of applied frequency (f) ranging from 20 kHz to 2 MHz in order to estimate the series resistance (R s) by the Nicollian-Brews method. R s was estimated as 77.79 Ω at 20 kHz. It decreased to 14.16 Ω at 2 MHz, which is expected because the charges at the interface states cannot follow the AC signal at high f values.

  15. Hole states in diamond p-delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

    2009-05-01

    The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

  16. Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

    Science.gov (United States)

    Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

    2018-02-01

    Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

  17. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    International Nuclear Information System (INIS)

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  18. Measurements of depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC using coherent acoustic phonons

    Science.gov (United States)

    Baydin, Andrey; Krzyzanowska, Halina; Dhanunjaya, M.; Rao, S. V. S. Nageswara; Davidson, Jimmy L.; Feldman, Leonard C.; Tolk, Norman H.

    Silicon carbide (SiC) is an ideal material for new electronics, such as high power/high temperature devices, and a candidate for advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications may require the control of defects created by ion bombardment. In this work, we examine depth dependent modification of optical constants of 4H-SiC due to hydrogen implantation at 180keV and low doses ranging from 1014 to 1016 cm-2probed by coherent acoustic phonon (CAP) spectroscopy. For our studies, we used Si-face 10 μm epilayers of n-type 4H-SiC grown by CVD on 4H-SiC substrate. A comprehensive analysis of the reference and implanted spectra shows a strong dependence of 4H-SiC complex refractive index shape versus depth on the H+ fluence. We extract the complex refractive index as a function of depth and ion beam dose. Our results demonstrate that the implantation-modified refractive index is distributed over a greater depth range than Monte Carlo calculation predictions of the implantation induced structural damage. These studies provide insight into the application of hydrogen ion implantation to the fabrication of SiC-based photonic and optoelectronic devices. Work is supported by ARO under Contract No. W911NF-14-1-0290.

  19. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications

    Science.gov (United States)

    Wang, Suyuan; Zheng, Jun; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2017-11-01

    We present the device simulations of analog and radio frequency (RF) performances of four double-gate pocket n-type tunneling field-effect transistors (NTFETs). The direct current (DC), analog and RF performances of the Ge-homo, GeSn-homo, GeSn/Ge and GeSn/GeSiSn NTFETs, are compared. The GeSn NTFETs greatly improve the on-state current (ION) and average subthreshold slope (SS), when compared with the Ge NTFET. Moreover, the GeSn/GeSiSn NTFET has the largest intrinsic gain (Av), and exhibits a suppressed ambipolar behavior, improved cut-off frequency (fT), and gain bandwidth product (GBW), according to the analyzed analog and RF figures of merit (FOM). Therefore, it can be concluded that the GeSn/GeSiSn NTFET has great potential as a promising candidate for the realization of future generation low-power analog/RF applications.

  20. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  1. Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of "micromorph" tandem solar cells

    Science.gov (United States)

    Chatterjee, P.; Roca i Cabarrocas, P.

    2018-01-01

    Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), "micromorph" tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter's low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the initial efficiency suffers. The advantage of such an IR is ultimately seen in the stabilized state since the LID of a thin top cell is low. We also find that for high stabilized efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency.

  2. Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

    Directory of Open Access Journals (Sweden)

    N. Thierry-Jebali

    2015-03-01

    Full Text Available This paper deals with the description and the application of an original photoluminescence (PL imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF identification. This technique, call “photoluminescence imaging spectroscopy” (PLIS, compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work.

  3. Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

    Science.gov (United States)

    Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

    2018-02-01

    We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

  4. Electronic structure of p type Delta doped systems

    International Nuclear Information System (INIS)

    Gaggero S, L.M.; Perez A, R.

    1998-01-01

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  5. Enhancing the Electron Mobility via Delta-Doping in SrTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Kozuka, Y.

    2011-08-11

    We fabricated high-mobility {delta}-doped structures in SrTiO{sub 3} thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO{sub 3}

  6. Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.

    2018-04-01

    The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.

  7. Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

    Energy Technology Data Exchange (ETDEWEB)

    Capan, I. [Rudjer Boskovic Institute, Bijenička 54, 10000 Zagreb (Croatia); Pastuović, Ž., E-mail: zkp@ansto.gov.au [Center for Accelerator Science, ANSTO, Locked bag 2001, Kirrawee Dc, NSW 2232 (Australia); Siegele, R. [Center for Accelerator Science, ANSTO, Locked bag 2001, Kirrawee Dc, NSW 2232 (Australia); Jaćimović, R. [Jozef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana (Slovenia)

    2016-04-01

    Deep level transient spectroscopy (DLTS) has been used to study vacancy-related defects formed in bulk n-type Czochralski-grown silicon after implantation of accelerated heavy ions: 6.5 MeV O, 10.5 MeV Si, 10.5 MeV Ge, and 11 MeV Er in the single ion regime with fluences from 10{sup 9} cm{sup −2} to 10{sup 10} cm{sup −2} and a direct comparison made with defects formed in the same material irradiated with 0.7 MeV fast neutron fluences up to 10{sup 12} cm{sup −2}. A scanning ion microprobe was used as the ion implantation tool of n-Cz:Si samples prepared as Schottky diodes, while the ion beam induced current (IBIC) technique was utilized for direct ion counting. The single acceptor state of the divacancy V{sub 2}(−/0) is the most prominent defect state observed in DLTS spectra of n-CZ:Si samples implanted by selected ions and the sample irradiated by neutrons. The complete suppression of the DLTS signal related to the double acceptor state of divacancy, V{sub 2}(=/−) has been observed in all samples irradiated by ions and neutrons. Moreover, the DLTS peak associated with formation of the vacancy-oxygen complex VO in the neutron irradiated sample was also completely suppressed in DLTS spectra of samples implanted with the raster scanned ion microbeam. The reason for such behaviour is twofold, (i) the local depletion of the carrier concentration in the highly disordered regions, and (ii) the effect of the microprobe-assisted single ion implantation. The activation energy for electron emission for states assigned to the V{sub 2}(−/0) defect formed in samples implanted by single ions follows the Meyer–Neldel rule. An increase of the activation energy is strongly correlated with increasing ion mass.

  8. Characterization and technology of AlGaAs/GaAs phototransistor with double delta-doped base

    International Nuclear Information System (INIS)

    Radziewicz, D.; Sciana, B.; Pucicki, D.; Zborowska-Lindert, I.; Kovac, J.; Skriniarova, J.; Vincze, A.

    2011-01-01

    This work describes the fabrication and measurements of n-p-n AlGaAs/GaAs heterojunction phototransistor with double Zn-delta-doped 50 nm - thick GaAs base region. Parameters of the particular transistor epilayers were optimized by computer simulations using Silvaco Atlas program. (authors)

  9. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  10. Excitonic recombination in delta-doped GaAs/AlAs type-II superlattices

    CERN Document Server

    Zhuravlev, K S; Gilinskij, A M; Braginskij, L S; Toropov, A I; Bakarov, A K

    2002-01-01

    An experimental study of excitonic recombination in delta-doped GaAs/AlAs type-II superlattices has been carried out. t is found that the increase in the impurity density of delta-layers from 2 x 10 sup 1 sup 0 to 7.5 x 10 sup 1 sup 1 cm sup - sup 2 results in (4-6)-fold decline in the integral superlattice photoluminescence intensity and in a significant decrease of excitonic photoluminescence intensity (70-80 times as much) accompanied by an increase in the exciton radiative recombination rate. It is concluded that built-in electric fields induced by ionized impurities are the principle reason for quenching the impurity photoluminescence

  11. Deep levels in GaAs due to Si .delta. doping

    Czech Academy of Sciences Publication Activity Database

    Hubík, Pavel; Krištofik, Jozef; Mareš, Jiří J.; Malý, Jan; Hulicius, Eduard; Pangrác, Jiří

    2000-01-01

    Roč. 88, č. 11 (2000), s. 6488-6494 ISSN 0021-8979 R&D Projects: GA ČR GA202/99/0410; GA AV ČR IAA1010806; GA AV ČR IAA1010807 Institutional research plan: CEZ:AV0Z1010914 Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.180, year: 2000

  12. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

    Science.gov (United States)

    Sengupta, Sarmista; Pandit, Soumya

    2015-06-01

    Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

  13. Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

    Directory of Open Access Journals (Sweden)

    Andrey Baydin

    2016-06-01

    Full Text Available Silicon carbide (SiC is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

  14. Optimization of the contact resistance in the interface structure of n-type Al/a-SiC:H by thermal annealing for optoelectronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, Roberto; Mireles, Jose Jr. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310, Chihuahua (Mexico); Torres, Alfonso; Zuniga, Carlos; Moreno, Mario [National Institute for Astrophysics Optics and Electronics INAOE, Luis E. Erro 1, PO Box 51 and 216, 7200, Puebla (Mexico)

    2010-07-15

    The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a-SiC:H films and an ohmic behavior in the interface metal/a-SiC:H. In this work, the optimization of the interface Al/a-SiC:H films are performed by means of thermal annealing timing. The a-SiC:H films were deposited by enhanced chemical vapor deposition from CH{sub 4}/SiH{sub 4} and C{sub 2}H{sub 2}/SiH{sub 4} mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 M{omega}/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 k{omega}. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

    Science.gov (United States)

    Wang, Yang

    1994-01-01

    We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

  16. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  17. Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

    International Nuclear Information System (INIS)

    Rodriguez V, I.; Gaggero S, L.M.

    2004-01-01

    We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

  18. Effect of thin emitter set-back layer on GaAs delta-doped emitter bipolar junction transistor

    Science.gov (United States)

    Lew, K. L.; Yoon, S. F.

    2005-05-01

    GaAs delta-doped emitter bipolar junction transistors (δ-BJT) with different emitter set-back layer thicknesses of 10to50nm were fabricated to study the emitter set-back layer thickness effect on device dc performance. We found that the current gain decreases following decrease in the emitter set-back layer thickness. A detailed analysis was performed to explain this phenomenon, which is believed to be caused by reduction of the effective barrier height in the δ-BJT. This is due to change in the electric-field distribution in the delta-doped structure caused by the built-in potential of the base-emitter (B-E ) junction. Considering the recombination and barrier height reduction effects, the thickness of the emitter set-back layer should be designed according to the B-E junction depletion width with a tolerance of ±5nm. The dc performance of a δ-BJT designed based on this criteria is compared to that of a Al0.25Ga0.75As /GaAs heterojunction bipolar transistor (HBT). Both devices employed base doping of 2×1019cm-3 and base-to-emitter doping ratio of 40. Large emitter area (AE≈1.6×10-5cm-2) and small emitter area (AE≈1.35×10-6cm-2) device current gains of 40 and 20, respectively, were obtained in both types of transistors passivated by (NH4)2S treatment. The measured current gain of the GaAs δ-BJT is the highest reported for a homojunction device with such high base-to-emitter doping ratio normally used in HBT devices.

  19. N-type solar cells: advantages, issues, and current scenarios

    Science.gov (United States)

    Singha, Bandana; Solanki, Chetan S.

    2017-07-01

    Crystalline silicon, including p-type czochralski (CZ) mono-crystalline and multi-crystalline (mc) silicon, has been the workhorse for solar cell production for decades. In recent years, there has been many developments in n-type c-Si solar cells basically due to the advantages of n-type c-Si wafers over p-type wafers. However, there are some limitations in making n-type solar cells considering the technologies involved to fabricate p-type cells. In this paper, different advantages of n-types wafers, their limitations in solar cell production, and an analysis of total market coverage are discussed.

  20. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    Science.gov (United States)

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-01

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z1/2, EH5, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z1/2 defects was found to be 1.7 × 1013 cm-3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  1. Electronic structure of p type Delta doped systems; Estructura electronica de sistemas dopadas con Delta de tipo p

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero S, L.M.; Perez A, R. [Departamento de Fisica de los Materiales, Universidad Nacional de Educacion a Distancia, Senda del Rey s/n, 28040 Madrid (Spain)

    1998-12-31

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  2. Preparation of ohmic n-type cubic boron nitride contacts

    CERN Document Server

    Wang Cheng Xin; Li Xun; Zhang Tie Chen; Han Yong; Luo Ji Feng; Shen Cai Xia; Gao Chun Xi; Zou Guang Tian

    2002-01-01

    Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulk crystals were fabricated by utilizing a covering technique, depositing Ti(10 nm)/Mo/(20 nm)/Pt-Au(200 nm) ohmic contact metal on both the sides of the c-BN substrate. The size of the specimen electrode was 100 x 100 mu m sup 2 on one side and 300 x 300 mu m sup 2 on the other side. Measurements on the specimen were made using a specially made device. Linear current-voltage characteristics were obtained. It is considered that the contact between the Ti-and Si-doped c-BN was ohmic.

  3. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  4. Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

    NARCIS (Netherlands)

    Stodolny, Maciej K.; Anker, John; Geerligs, Bart L.J.; Janssen, Gaby J.M.; van de Loo, Bas W.H.; Melskens, Jimmy; Santbergen, Rudi; Isabella, Olindo; Schmitz, Jurriaan; Lenes, Martijn; Luchies, Jan Marc; Kessels, Wilhelmus M.M.; Romijn, Ingrid

    2017-01-01

    We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps

  5. Lifetime degradation of n-type Czochralski silicon after hydrogenation

    Science.gov (United States)

    Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

    2018-04-01

    Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

  6. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  7. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  8. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  9. Characterization and Reliability of Vertical N-Type Gallium Nitride Schottky Contacts

    Science.gov (United States)

    2016-09-01

    aluminum / gallium arsenide Schottky diodes,” J. Appl. Phys., vol. 69, no. 10, pp. 7142–7145, May, 1991. 80 THIS PAGE INTENTIONALLY LEFT BLANK...EECP equilibrium of electrochemical potential GaAs gallium arsenide GaN gallium nitride HEMT high-electron mobility transistor HF hydrofluoric acid...only one of the mechanisms [8]-[11]. For high mobility n-type Schottky contacts like Si, gallium arsenide (GaAs), and GaN, thermionic emission is

  10. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  11. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  12. Ge /Si heteronanocrystal floating gate memory

    Science.gov (United States)

    Li, Bei; Liu, Jianlin; Liu, G. F.; Yarmoff, J. A.

    2007-09-01

    Metal oxide semiconductor field effect transistor memories with Ge /Si heteronanocrystals (HNCs) as floating gate were fabricated and characterized. Ge /Si HNCs with density of 5×1011cm-2 were grown on n-type Si (100) substrate with thin tunnel oxide on the top. Enhanced device performances including longer retention time, faster programming speed, and higher charge storage capability are demonstrated compared with Si nanocrystal (NC) memories. The erasing speed and endurance performance of Ge /Si HNC memories are similar to that of Si NC devices. The results suggest that Ge /Si HNCs may be an alternative to make further floating gate memory scaling down possible.

  13. Thermoelectric n-type silicon germanium synthesized by unidirectional solidification in microgravity

    Energy Technology Data Exchange (ETDEWEB)

    Okutani, Takeshi, E-mail: okutani@ynu.ac.jp [Graduate School of Environment and Information Sciences, Yokohama National University, 79-7 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501 (Japan); Kabeya, Yuto [Graduate School of Environment and Information Sciences, Yokohama National University, 79-7 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501 (Japan); Nagai, Hideaki [National Institute of Advanced Industrial Science and Technology,1-1-1 Higashi, Tsukuba 305-8565 (Japan)

    2013-02-25

    Highlights: Black-Right-Pointing-Pointer Thermoelectric n-type SiGe was synthesized by unidirectional solidification. Black-Right-Pointing-Pointer SiGe had dendrite structure aligned along the solidification direction. Black-Right-Pointing-Pointer SiGe solidified unidirectionally in microgravity had crystalline orientation. Black-Right-Pointing-Pointer Anisotropy of electric conductivity was seen in orthogonal solidification directions. Black-Right-Pointing-Pointer ZT of Si{sub 0.7}Ge{sub 0.3}-1at%P solidified in microgravity at 1000 K was 1.19. - Abstract: Thermoelectric n-type Si{sub 0.2}Ge{sub 0.8} and Si{sub 0.7}Ge{sub 0.3} added 1at%P for Si-Ge were synthesized by unidirectional solidification in microgravity. Microgravity with {+-}10{sup -2} g for 0.46 s was obtained in free fall using a 2 m-drop tower. The microstructure of the sample solidified in microgravity and 1 g was dendrite on the surface that contacted a Cu chill block. The microstructure of the cross section along the cooling direction was dendrite and the columnar dendrite structure was mainly aligned along the solidification direction. The dendrite became larger with depth from the surface that contacted the Cu chill block, and the width of the primary dendrite arm solidified in microgravity exceeded that in 1 g. Ge was segregated to the secondary arm of columnar dendrite. The Si/Ge atomic ratio in the primary and secondary arm of Si{sub 0.7}Ge{sub 0.3}-1at%P solidified in 1 g and microgravity was slightly higher than that of solidified Si{sub 0.8}Ge{sub 0.2}-1at%P in 1 g and microgravity. The secondary arm of solidified Si{sub 0.7}Ge{sub 0.3}-1at%P was wider than that of solidified Si{sub 0.8}Ge{sub 0.2}-1at%P. P was distributed uniformly in Si-Ge solidified in microgravity. The electrical conductivities of Si{sub 0.8}Ge{sub 0.2}-1at%P and Si{sub 0.7}Ge{sub 0.3}-1at%P were anisotropic in directions along and perpendicular to the solidification direction. The dimensionless Figure of Merit, ZT, of

  14. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  15. Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

    Science.gov (United States)

    Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

    2018-05-01

    The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

  16. Air-stable n-type colloidal quantum dot solids

    KAUST Repository

    Ning, Zhijun

    2014-06-08

    Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

  17. High efficiency heterojunction solar cells on n-type kerfless mono crystalline silicon wafers by epitaxial growth

    Science.gov (United States)

    Kobayashi, Eiji; Watabe, Yoshimi; Hao, Ruiying; Ravi, T. S.

    2015-06-01

    We present a heterojunction (HJ) solar cell on n-type epitaxially grown kerfless crystalline-silicon (c-Si) with a conversion efficiency of 22.5%. The total cell area is 243.4 cm2. The cell has a short-circuit current density of 38.6 mA/cm2, an open-circuit voltage of 735 mV, and a fill factor of 0.791. The key advantages and technological tasks of epitaxial wafers for HJ solar cells are discussed, in comparison with conventional n-type Czockralski c-Si wafers. The combination of HJ and kerfless technology can lead to high conversion efficiency with a potential at low cost.

  18. n-Type Azaacenes Containing B←N Units.

    Science.gov (United States)

    Min, Yang; Dou, Chuandong; Tian, Hongkun; Geng, Yanhou; Liu, Jun; Wang, Lixiang

    2018-02-12

    We disclose a novel strategy to design n-type acenes through the introduction of boron-nitrogen coordination bonds (B←N). We synthesized two azaacenes composed of two B←N units and six/eight linearly annelated rings. The B←N unit significantly perturbed the electronic structures of the azaacenes: Unique LUMOs delocalized over the entire acene skeletons and decreased aromaticity of the B←N-adjacent rings. Most importantly, these B←N-containing azaacenes exhibited low-lying LUMO energy levels and high electron affinities, thus leading to n-type character. The solution-processed organic field-effect transistor based on one such azaacene exhibited unipolar n-type characteristics with an electron mobility of 0.21 cm 2  V -1  s -1 . © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Microwave Faraday effect in n-type germanium

    NARCIS (Netherlands)

    Bouwknegt, A.; Volger, J.

    The Faraday rotation, ellipticity and the accompanying magneto-absorption were determined from measurements with the crossed wave guide coupler device, at room temperature, at 24.9 GHz. The complex conductivity tensor elements of n-type germanium were deduced from this complete Faraday effect, with

  20. Electric transport in N-type Fe2O3

    NARCIS (Netherlands)

    Acket, G.A.; Volger, J.

    Resistivity, Seebeck-coefficient, Hall-coefficient and magneto-resistance of n-type single crystal ferric oxide (hematite), containing Sn4+ as an impurity, are reported. The resistivity does not show important anisotropy. The Hall- and magneto-resistance effects are probably related to the parasitic

  1. Blocking contacts for N-type cadmium zinc telluride

    Science.gov (United States)

    Stahle, Carl M. (Inventor); Parker, Bradford H. (Inventor); Babu, Sachidananda R. (Inventor)

    2012-01-01

    A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

  2. Beryllium implant activation and damage recovery study in n-type GaSb

    Science.gov (United States)

    Rahimi, N.; Behzadirad, M.; Renteria, Emma J.; Shima, D. M.; Muniz, Ayse J.; Busani, T.; Lavrova, Olga; Balakrishnan, G.; Lester, L. F.

    2014-03-01

    Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.

  3. Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

    Science.gov (United States)

    Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

    2018-04-01

    In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

  4. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  5. Spin injection in n-type resonant tunneling diodes.

    Science.gov (United States)

    Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

    2012-10-25

    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

  6. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  7. N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

    KAUST Repository

    Zhitomirsky, David

    2012-09-12

    N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Potassium-doped n-type bilayer graphene

    Science.gov (United States)

    Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

    2018-01-01

    Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

  9. Origins of n -type doping difficulties in perovskite stannates

    Science.gov (United States)

    Weston, L.; Bjaalie, L.; Krishnaswamy, K.; Van de Walle, C. G.

    2018-02-01

    The perovskite stannates (A SnO3 ; A = Ba, Sr, Ca) are promising for oxide electronics, but control of n -type doping has proved challenging. Using first-principles hybrid density functional calculations, we investigate La dopants and explore the formation of compensating acceptor defects. We find that La on the A site always behaves as a shallow donor, but incorporation of La on the Sn site can lead to self-compensation. At low La concentrations and in O-poor conditions, oxygen vacancies form in BaSnO3. A -site cation vacancies are found to be dominant among the native compensating centers. Compared to BaSnO3, charge compensation is a larger problem for the wider-band-gap stannates, SrSnO3 and CaSnO3, a trend we can explain based on conduction-band alignments. The formation of compensating acceptor defects can be inhibited by choosing oxygen-poor (cation-rich) growth or annealing conditions, thus providing a pathway for improved n -type doping.

  10. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  11. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander

    2016-10-07

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  12. Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector

    Science.gov (United States)

    Liu, Yuh-Shiuan; Saniul Haq, Abul Fazal Muhammad; Mehta, Karan; Kao, Tsung-Ting; Wang, Shuo; Xie, Hongen; Shen, Shyh-Chiang; Yoder, P. Douglas; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.

    2016-11-01

    An optically pumped vertical-cavity surface-emitting laser with an electrically conducting n-type distributed Bragg reflector was achieved at 374.9 nm. An epitaxially grown 40-pair n-type AlGaN/GaN distributed Bragg reflector was used as the bottom mirror, while the top mirror was formed by a dielectric distributed Bragg reflector composed of seven pairs of HfO2/SiO2. A numerical simulation for the optical mode clearly demonstrated that a high confinement factor was achieved and the threshold pumping power density at room temperature was measured as 1.64 MW/cm2. The achieved optically pumped laser demonstrates the potential of utilizing an n-type distributed Bragg reflector for surface-emitting optical devices.

  13. Epitaxy-stabilized n-type superconducting cuprates

    CERN Document Server

    Naito, M; Tsukada, A

    2002-01-01

    We report the growth of n-type superconducting T'-(La,Ce) sub 2 CuO sub 4 and infinite-layer (IL) (Sr,La)CuO sub 2 thin films by means of molecular beam epitaxy (MBE). The bulk synthesis of T'-(La,Ce) sub 2 CuO sub 4 and IL-(Sr,La)CuO sub 2 requires complicated techniques: synthesis at low temperatures below 600 deg C for the former and at high pressures above 3 GPa for the latter. This makes it difficult to grow bulk single crystals. We have found, however, that high-quality single-crystalline films of both compounds can be rather easily prepared by thin-film processes. Single-phase T'-(La,Ce) sub 2 CuO sub 4 films can be obtained for a wide range of x (0.0 <= x <= approx 0.4). The best T sub c sup e sup n sup d is over 30 K, which is the highest in the T' family. For IL-(Sr,La)CuO sub 2 , by using KTaO sub 3 substrates, high T sub c sup e sup n sup d over 39 K and also metallic resistivity were achieved for the first time to our knowledge. We describe the key parameters in the growth and the propertie...

  14. Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

    Science.gov (United States)

    Rys, Andrzej; Chin, Tim; Compaan, Alvin; Bhat, Ajit

    1988-08-01

    A study of carrier activation and mobility was performed in pulsed laser annealed samples of GaAs implanted with doses of Si and Se from 2.2x1012 to 6.0x1014 cm-2. The samples were annealed using a pulsed XeCl excimer laser ( λ=308 nm) and a pulsed dye laser ( λ=728 nm) with energy densities from 0.1 to 0.9 J/cm2 and a 10 nsec pulse. Very high carrier concentrations of 3x1019 and 1.5x1019 cm-3 were obtained for best n-type GaAs samples annealed with the dye laser and excimer laser, respectively. Dye laser consistently produced higher activation than excimer laser annealing. A transient reflectivity experiment was performed to identify the GaAs melt threshold and the melt phase dynamics of the GaAs,under the nitride cap. The threshold energies for cap damage were 0.34 and 0.12 J/cm2 for excimer and dye lasers, respectively. High carrier activation, as measured by Van der Pauw method, was achieved even for lightly doped samples although the room temperature Hall mobility was low. Raman spectroscopy was used to identify the threshold energies for the GaAs implant layer recrystallization and for optimum carrier activation.

  15. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  16. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  17. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  18. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  19. Towards the next generation 23% efficient n-type cells with low cost manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Yelundur, Vijay [Suniva Inc., Norcross, GA (United States)

    2017-04-19

    Suniva, Inc., in collaboration with the University Center for Excellence in Photovoltaics (UCEP) at the Georgia Institute of Technology (GIT) proposed this comprehensive three year program to enable the development of an advanced high performance product that will help the US regain its competitive edge in PV. This project was designed to overcome cost and efficiency barriers through advances in PV science, technology innovation, low-cost manufacturing and full production of ~22.5% efficient n-type Si cells in Norcross, GA. At the heart of the project is the desire to complement the technology being developed concurrently under the Solarmat and ARPAe initiatives to develop a differentiated product superior in both performance and cost effectiveness to the competing alternatives available on the market, and push towards achieving SunShot objectives while ensuring a sustainable business model based on US manufacturing. A significant reduction of the costs in modules produced today will need to combine reductions in wafer costs, cell processing costs as well as module fabrication costs while delivering a product that is not only more efficient under test conditions but also increases the energy yield in outdoor operations. This project will result in a differentiated high performance product and technology that is consistent with sustaining PV manufacturing in the US for a longer term and further highlights the need for continued support for developing the next generation concepts that can keep US manufacturing thriving to support the growing demand for PV in the US and consistent with the US government’s mandates for energy independence.

  20. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

    Science.gov (United States)

    Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

    2017-09-01

    In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

  1. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Collazo, Ramon; Rice, Anthony; Tweedie, James; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Mita, Seiji; Xie, Jinqiao; Dalmau, Rafael [HexaTech, Inc., Morrisville, NC (United States)

    2011-07-15

    As the building blocks of deep UV light emitting diode (LED) technology and high-power electronic devices, AlGaN alloys have attracted considerable attention. In this study, AlGaN films with varying compositions doped with Si were deposited on homoepitaxial AlN layers grown on AlN single crystal substrates. The room temperature resistivity of AlGaN alloys of different compositions grown on AlN and sapphire substrates with a constant Si doping level of 6x10{sup 18} cm{sup -3} was compared. AlGaN films grown on AlN substrates consistently exhibited a lower n-type resistivity than those grown on sapphire. An n-type resistivity of 0.1 {omega} cm was obtained for an AlGaN film with 80% Al content and a sheet resistance of 235 {omega}/sq. for an AlGaN film with 70% Al content. The carrier activation energy as a function of Al content in AlGaN for these n-type films was measured. For compositions below 80% Al, the activation energy was around 15 meV due to impurity potential screening. For higher Al compositions, the carrier concentration was limited by a high compensation ratio, except for AlN, which has activation energy of 250 meV. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Understanding the effect of n-type and p-type doping in the channel ...

    Indian Academy of Sciences (India)

    channel device remains unsaturated. On comparing figures 2–8, we observe larger variations in on and off-currents in n-type-doped structure in compari- son with p-type-doped and undoped channel structures. It is also possible to obtain the important saturation characteris- tics on introducing n-type-doping near drain side, ...

  3. Estimation of interface resistivity in bonded Si for the development of high performance radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Nomiya, Seiichiro; Onabe, Hideaki

    2007-01-01

    For the development of high performance radiation detectors, direct bonding of Si wafers would be an useful method. Previously, p-n bonded Si were fabricated and they showed diode characteristics. The interface resistivity was, however, not investigated in detail. For the study of interface resistivity, n-type Si wafers with different resistivities were bonded. The resistivity of bonded Si wafers were measured and the interface resistivity was estimated by comparing with the results of model calculations. (author)

  4. Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

    Science.gov (United States)

    Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

    2018-03-01

    Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

  5. Thermophotovoltaic energy conversion system having a heavily doped n-type region

    Science.gov (United States)

    DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

    2000-01-01

    A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

  6. Understanding the effect of n-type and p-type doping in the channel ...

    Indian Academy of Sciences (India)

    type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...

  7. Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs

    Science.gov (United States)

    Shimizu, Haruka; Shima, Akio; Shimamoto, Yasuhiro; Iwamuro, Noriyuki

    2017-04-01

    The ohmic contact on n- and p-type SiC regions with the same contact metal is a key process in regard to creating high-performance MOSFETs and insulated gate bipolar transistors (IGBTs). The dependence of the contact resistance on n- and p-type SiC regions on ion species, dose, and implantation temperature was investigated. The results of such an investigation revealed that the amorphization of the SiC surface and the generation of 3C-SiC produce a low contact resistance without the need for a high-temperature metallization process. The contact resistances of 2.1 × 10-6 Ω cm2 on the n-type SiC region and 1.3 × 10-3 Ω cm2 on the p-type SiC region were obtained with high-dose ion implantation at room temperature on the n-type SiC region, high-dose ion implantation at high temperature on the p-type SiC region, and a titanium-based contact electrode. A SiC MOSFET was fabricated with the low-temperature ohmic contact process. The positive-bias gate leakage current markedly increased. It can be deduced that high-dose ion implantation at room temperature on the n-type SiC region degrades surface roughness on the N+ source region.

  8. n-type doping and passivation of CuInSe2 and CuGaSe2 by hydrogen

    Science.gov (United States)

    Kılıç, Çetin; Zunger, Alex

    2003-08-01

    An impurity in a semiconductor can have either amphoteric behavior (no net production of electron or holes), or be an energetically deep center (carriers produced only at high temperature), or a shallow center (carriers produced even at low temperature). In most semiconductors (e.g., Si, GaAs, GaP, InP, and ZnSe) hydrogen impurities do not produce free carriers, being instead an amphoretic center; yet hydrogen does dope n-type some oxides such as SnO2 and ZnO. We studied theoretically whether or not H could dope chalcopyrite I-III-VI2 compounds, CuInSe2 and CuGaSe2. Based on the first-principles calculations, we find that nonsubstitutionally incorporated hydrogen forms a deep donor in CuGaSe2, but a relatively shallow donor in CuInSe2. The interaction of hydrogen with the abundant defect complex (2VCu+InCu)0 yields an even shallower donor, making CuInSe2 n type. In addition, our results show that hydrogen passivates the acceptorlike copper vacancies in both CuInSe2 and CuGaSe2, thus eliminating p type behavior. These findings, in conjunction with typical conditions under which CuInSe2 and CuGaSe2 are grown, indicate that CuInSe2 could be doped n type via hydrogen incorporation, whereas CuGaSe2 could not. The reason for the different behavior of CuInSe2 and CuGaSe2 towards hydrogen is that in the latter case the conduction-band minimum is at a considerably higher energy than in the former case. Despite this difference in electrical properties, it is predicted that hydrogen can be stored in both CuInSe2 and CuGaSe2 via implantation since the implanted hydrogens decorate copper atoms as well as preexisting copper vacancies.

  9. Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

    2012-06-01

    The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

  10. Electrodeposition of cadmium on n-type silicon single crystals of ...

    African Journals Online (AJOL)

    sea

    number of atoms in the critical nucleus are determined from the analysis of current transients at different overpotentials. Values of. Ncrit are 16 ± 1 (-16 mV ≥ η ≥ -19 mV) and 7 ± 1 (-14 mV ≥ η ≥ -18 mV) for n-Si(100) and n-Si(111) respectively. KEYWORDS: Electrodeposition; n-Si(111); n-Si(100); Nucleation and growth ...

  11. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  12. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  13. New Conotoxin SO-3 Targeting N-type Voltage-Sensitive Calcium Channels

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2006-04-01

    Full Text Available Selective blockers of the N-type voltage-sensitive calcium (CaV channels are useful in the management of severe chronic pain. Here, the structure and function characteristics of a novel N-type CaV channel blocker, SO-3, are reviewed. SO-3 is a 25-amino acid conopeptide originally derived from the venom of Conus striatus, and contains the same 4-loop, 6-cysteine framework (C-C-CC-C-C as O-superfamily conotoxins. The synthetic SO-3 has high analgesic activity similar to ω-conotoxin MVIIA (MVIIA, a selective N-type CaV channel blocker approved in the USA and Europe for the alleviation of persistent pain states. In electrophysiological studies, SO-3 shows more selectivity towards the N-type CaV channels than MVIIA. The dissimilarity between SO-3 and MVIIA in the primary and tertiary structures is further discussed in an attempt to illustrate the difference in selectivity of SO-3 and MVIIA towards N-type CaV channels.

  14. Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

    Science.gov (United States)

    Das, Kalyan; Hall, Harvey

    1999-01-01

    Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

  15. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  16. Inhibitory effect of aniracetam on N-type calcium current in acutely isolated rat neuronal cells.

    Science.gov (United States)

    Koike, H; Saito, H; Matsuki, N

    1993-04-01

    Effects of aniracetam on whole-cell calcium currents were studied in acutely isolated neuronal cells from postnatal rat ventromedial hypothalamus. There were three types of inward calcium currents, one low-threshold transient current and two high-threshold sustained currents. The nicardipine sensitive L-type current was activated at -20 mV or more depolarized potentials, and the omega-conotoxin sensitive N-type current was recorded at more positive potentials than the L-type. Aniracetam inhibited the N-type current in a dose-dependent manner without affecting the other two types of calcium currents. The effect appeared soon after the addition and lasted for several minutes during washing. Since the N-type current is thought to regulate the release of transmitters, the inhibitory effect may contribute to the nootropic property of aniracetam by modifying the neurotransmission.

  17. Magnéli oxides as promising n-type thermoelectrics

    Directory of Open Access Journals (Sweden)

    Gregor Kieslich

    2014-10-01

    Full Text Available The discovery of a large thermopower in cobalt oxides in 1997 lead to a surge of interest in oxides for thermoelectric application. Whereas conversion efficiencies of p-type oxides can compete with non-oxide materials, n-type oxides show significantly lower thermoelectric performances. In this context so-called Magnéli oxides have recently gained attention as promising n-type thermoelectrics. A combination of crystallographic shear and intrinsic disorder lead to relatively low thermal conductivities and metallic-like electrical conductivities in Magnéli oxides. Current peak-zT values of 0.3 around 1100 K for titanium and tungsten Magnéli oxides are encouraging for future research. Here, we put Magnéli oxides into context of n-type oxide thermoelectrics and give a perspective where future research can bring us.

  18. Modulation of n-Type Units in Bipolar Host Materials toward High-Performance Phosphorescent OLEDs.

    Science.gov (United States)

    Wang, Fang; Liu, Di; Li, Jiuyan; Ma, Mengyao

    2017-11-01

    9'-Pyridinyl-9'H-9,3':6',9″-tercarbazole (PyCz) is a bipolar host material in phosphorescent organic light-emitting diodes (PhOLEDs). A second n-type unit, either pyridine or diphenylphosphine dioxide (DPPO), is introduced onto the pyridine ring of PyCz at para- or metasite to design and prepare four novel "dual n-type unit bipolar host" materials m-BPyCz, p-BPyCz, m-POPyCz, and p-POPyCz. The incorporation of the second n-type unit pulls down the lowest unoccupied molecular orbitals and facilitates electron injection and transportation, resulting in better charge-balancing ability. As a result, these dual n-type unit bipolar hosts exhibit higher efficiencies and slower efficiency roll-off in their blue and green PhOLEDs. In particular, m-POPyCz containing a bulky DPPO as the second n-type unit with a metalinking possesses the best charge-balancing state and generates a maximum external quantum efficiency (η ext ) of 27.0% (corresponding to a current efficiency of 51.9 cd A -1 and a power efficiency of 46.5 lm W -1 ) in its sky-blue device and still remained at a high η ext of 23.6% even at the practical brightness of 1000 cd m -2 . These results clearly demonstrate that the "dual n-type unit bipolar hosts" with an optimized substitution position and steric effect is a new and effective type of host materials for high-performance OLEDs.

  19. N-type self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Ringk, A.; Li, X.; Gholamrezaie, F.; Smits, E.C.P.; Neuhold, A.; Moser, A.; Gelinck, G.H.; Resel, R.; Leeuw, D.M. de; Strohriegl, P.

    2012-01-01

    Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a

  20. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  1. Space-charge solitary waves and double layers in n-type ...

    Indian Academy of Sciences (India)

    S BANERJEE

    2018-02-20

    Feb 20, 2018 ... Abstract. Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compen- sated drifting semiconductor plasma with varying doping profiles. Through ...

  2. Morphological and optical properties of n-type porous silicon: effect ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 7. Morphological and optical properties of n-type porous silicon: effect of etching current density. M DAS D SARKAR. Volume 39 Issue 7 ... Calculated crystallite size shows decreasing trend with increasing J value. The optical properties of these samples have ...

  3. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...

  4. Study of the interface in n{sup +}{mu}c-Si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Grimaldi, A.; Sacchetti, A.; Capezzuto, P.; Ambrico, M.; Bruno, G.; Roca, Francesco

    2003-03-03

    Investigation of n-p heterojunction solar cells obtained by depositing a n-type thin silicon films either amorphous or microcrystalline on p-type c-Si is carried out. The study is focused on the improvement of the c-Si surface and emitter layer/c-Si substrate interface. The peculiarity is the use of SiF{sub 4}-based plasmas for the in situ dry cleaning and passivation of the c-Si surface and for the PECVD deposition of the emitter layer that can be either amorphous (a-Si:H,F) or microcrystalline ({mu}c-Si). The use of SiF{sub 4} instead of the conventional SiH{sub 4} results in a lower hydrogen content in the film and in a reduction of the interaction of the c-Si surface with hydrogen atoms. Furthermore, the dependence of the heterojunction solar cell photovoltaic parameters on the insertion of an intrinsic buffer layer between the n-type thin silicon layer and the p-type c-Si substrate is discussed.

  5. Attempting to realize n-type BiCuSeO

    Science.gov (United States)

    Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

    2018-02-01

    As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

  6. Electrical properties of strained nano-thin 3C-SiC/Si heterostructures

    International Nuclear Information System (INIS)

    Rahimi, R; Miller, C M; Raghavan, S; Korakakis, D; Stinespring, C D

    2009-01-01

    The effects of strain on the conduction mechanism in heterostructures consisting of strained nano-thin 3C-SiC films on Si are reported. These films exhibit significantly different electrical behaviours than the bulk material. Strained nano-thin 3C-SiC films were grown on n-type Si substrates by gas source molecular beam epitaxy. Reflection high-energy electron diffraction patterns show that these films are about 3% strained relative to the SiC lattice constant. In order to investigate the electrical properties of thin film structures, Al, Cr and Pt contacts to a nano-thin film 3C-SiC were deposited and characterized. The I-V measurements of the strained nano-thin films demonstrate back-to-back Schottky diode characteristics and the band offsets due to the biaxial tensile strain introduced within the 3C-SiC films were calculated and simulated. Based on the experimental and simulation results, an empirical model for the current transport in the heterostructures based on strained nano-thin films has been proposed. It was found that due to the band alignment of this structure, current is constrained at the surface which allows use of nano-thin films as surface sensors.

  7. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

    2014-11-15

    Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

  8. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NARCIS (Netherlands)

    Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2015-01-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

  9. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    Science.gov (United States)

    Liu, Gang; Xu, Can; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit; Feldman, Leonard C.

    2014-11-01

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1 ¯ ) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.

  10. Asymmetric electron and hole transport in a high-mobility n-type conjugated polymer

    NARCIS (Netherlands)

    Wetzelaer, Gert-Jan A. H.; Kuik, Martijn; Olivier, Yoann; Lemaur, Vincent; Cornil, Jerome; Fabiano, Simone; Loi, Maria Antonietta; Blom, Paul W. M.; Cornil, Jérôme

    2012-01-01

    Electron-and hole-transport properties of the n-type copolymer poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} [P(NDI2OD-T2), PolyeraActivInk (TM) N2200] are investigated. Electron- and hole-only devices with Ohmic contacts are

  11. n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

    OpenAIRE

    Zivcova, Z. Vlckova; Frank, O.; Drijkoningen, Sien; Haenen, Ken; Mortet, Vincent; Kavan, L.

    2016-01-01

    Electrochemical and in situ Raman spectroelectrochemical characterization of n-type phosphorus-doped nanocrystalline diamond (P-NCD) is carried out. The P-NCD films are grown by microwave plasma enhanced chemical vapour deposition and doped with phosphorus at a concentration of 10 000 ppm in the gas phase. Micro-Raman spectroscopy determines the film quality (presence of graphitic or amorphous phases). All electrochemical measurements are performed in aqueous 0.5 M H2SO4 electrolyte solution....

  12. Space-charge solitary waves and double layers in n-type compensated semiconductor quantum plasma

    Science.gov (United States)

    Banerjee, S.; Ghosh, B.

    2018-03-01

    Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compensated drifting semiconductor plasma with varying doping profiles. Through numerical analysis, it is shown that the structures of space-charge solitary waves and double layers depend significantly on electron drift and compensation parameter which measures a comparative proportion of the donor, acceptor and intrinsic ion concentrations.

  13. Propagation of surface acoustic waves in n-type GaAs films

    Science.gov (United States)

    Wu, Chhi-Chong; Tsai, Jensan

    1983-05-01

    The effect of nonparabolicity on the amplification of surface acoustic waves in n-type GaAs films is investigated quantum mechanically in the GHz frequency region. Numerical results show that the amplification coefficient for the nonparabolic band structure is enhanced due to the nonlinear nature of the energy band in semiconductors. Moreover, the amplification coefficients in semiconductors depend on the temperature, the electronic screening effect, the frequency of sound waves, the applied electric field, and the thickness of the semiconductor film.

  14. Study of polarization phenomena in n-type CdZnTe

    Czech Academy of Sciences Publication Activity Database

    Elhadidy, Hassan; Dědic, V.; Franc, J.; Grill, R.

    2014-01-01

    Roč. 47, č. 5 (2014), Art. number 055104 ISSN 0022-3727 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068; GA MŠk(CZ) EE2.3.20.0214 Institutional support: RVO:68081723 Keywords : n-type CZT * polarization * electron de-trapping * Pockels effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.721, year: 2014

  15. Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material

    Science.gov (United States)

    Yu, Jiabing; Sun, Qiang

    2018-01-01

    Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

  16. n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    International Nuclear Information System (INIS)

    Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

    2007-01-01

    The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

  17. Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

    International Nuclear Information System (INIS)

    Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

    2011-01-01

    We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

  18. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

    Directory of Open Access Journals (Sweden)

    Haocheng Sun

    2018-01-01

    Full Text Available Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices. In the experiments, pristine phosphorene shows p-type semiconducting with no exception. To reach its full capability, n-type semiconducting is a necessity. Here, we report the electronic structure engineering of phosphorene by surface metal atom doping. Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene. These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital. Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states. The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity. Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting. Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene. Parallel studies of Li and Na doping support these findings. In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration. It is also interesting that Au can hardly change the work function of phosphorene.

  19. n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

    Directory of Open Access Journals (Sweden)

    Gutsche Christoph

    2011-01-01

    Full Text Available Abstract In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.

  20. Complementary p- and n-type polymer doping for ambient stable graphene inverter.

    Science.gov (United States)

    Yun, Je Moon; Park, Seokhan; Hwang, Young Hwan; Lee, Eui-Sup; Maiti, Uday; Moon, Hanul; Kim, Bo-Hyun; Bae, Byeong-Soo; Kim, Yong-Hyun; Kim, Sang Ouk

    2014-01-28

    Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

  1. Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN

    International Nuclear Information System (INIS)

    Jang, Ho Won; Sands, T.; Lee, Jong-Lam

    2003-01-01

    Electrical properties of metal contacts on laser-irradiated n-type and p-type GaN surfaces were investigated using current-voltage, capacitance-voltage, and synchrotron radiation photoemission spectroscopy. After the irradiation of a KrF excimer laser pulse (600 mJ/cm 2 at 248 nm for 38 ns) onto Si-doped GaN, a nonalloyed Ti/Al metallization formed an ohmic contact with the specific contact resistivity of 1.7x10 -6 Ω cm 2 . The laser irradiation decomposed GaN into metallic Ga and nitrogen gas. The decomposed metallic Ga reacted with oxygen in air to form a Ga oxide layer with the thickness of ∼40 Aa, producing a large number of N vacancies near the surface. The formation of a degenerated n-type GaN layer resulted in the low contact resistivity. For Mg-doped GaN, the laser irradiation increased the effective acceptor concentration. Simultaneously, the activation efficiency of Mg dopants was enhanced by the photon-assisted breaking of Mg-H bonds and/or the removal of hydrogen atoms in the presence of oxygen, producing the p-type GaN with an increased hole concentration. As a result, the contact resistivity of an oxidized Ni/Au contact could be reduced from 1.3x10 -3 to 3.6x10 -4 Ω cm 2

  2. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

    Science.gov (United States)

    Lin, Yung-Chen; Lu, Kuo-Chang; Wu, Wen-Wei; Bai, Jingwei; Chen, Lih J; Tu, K N; Huang, Yu

    2008-03-01

    We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.

  3. Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy

    Science.gov (United States)

    Boumenou, C. Kameni; Urgessa, Z. N.; Djiokap, S. R. Tankio; Botha, J. R.; Nel, J.

    2018-04-01

    In this study, cross-sectional surface potential imaging of n+/semi-insulating GaAs junctions is investigated by using amplitude mode kelvin probe force microscopy. The measurements have shown two different potential profiles, related to the difference in surface potential between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and the sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD values across the interface are much smaller than the calculated values (on average about 25% of the theoretical values) and increase with the electron density. Therefore, the results presented in study are only in qualitative agreement with the theory.

  4. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), 700170 Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation); Krause-Rehberg, Reinhard [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Elsayed, Mohamed [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Minia University, Faculty of Science, Physics Department, 61519 Minia (Egypt); Kozlovskii, Vitalii [St. Petersburg State Polytechnical University, 195251 St. Petersburg (Russian Federation)

    2016-12-15

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V{sub op}-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V{sub s-ext}, as well as a relaxed inwards a couple of vacancies, 2V{sub inw}, are suggested as the open vacancy volume V{sub op} to be probed with the positron. It is argued that a high thermal stability of the V{sub s-ext} PV{sub s-ext} (or V{sub inw}PV{sub inw.}) configuration is contributed by the efficiency of PSi{sub 5} bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

    Directory of Open Access Journals (Sweden)

    Schutz-Kuchly T.

    2014-01-01

    Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

  6. Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation.

    Science.gov (United States)

    Yao, Tingting; Chen, Ruotian; Li, Junjie; Han, Jingfeng; Qin, Wei; Wang, Hong; Shi, Jingying; Fan, Fengtao; Li, Can

    2016-10-07

    The photoanodes with heterojunction behavior could enable the development of solar energy conversion, but their performance largely suffers from the poor charge separation and transport process through the multiple interfacial energy levels involved. The question is how to efficiently manipulate these energy levels. Taking the n-Si Schottky photoanode as a prototype, the undesired donor-like interfacial defects and its adverse effects on charge transfer in n-Si/ITO photoanode are well recognized and diminished through the treatment on electronic energy level. The obtained n-Si/TiO x /ITO Schottky junction exhibits a highly efficient charge transport and a barrier height of 0.95 eV, which is close to the theoretical optimum for n-Si/ITO Schottky contact. Then, the holes extraction can be further facilitated through the variation of surface energy level, with the NiOOH coated ITO layer. This is confirmed by a 115% increase in surface photovoltage of the photoanodes. Eventually, an unprecedentedly low onset potential of 0.9 V (vs RHE) is realized for water oxidation among n-Si photoanodes. For the water oxidation reaction, the n-Si/TiO x /ITO/NiOOH photoanode presents a charge separation efficiency up to 100% and an injection efficiency greater than 90% at a wide voltage range. This work identifies the important role of interfacial energetics played in photoelectrochemical conversion.

  7. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Lopez, J., E-mail: fjgl@us.es [Dpto. Física Atómica, Molecular y Nuclear, Universidad de Sevilla, 41080 Sevilla (Spain); CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jimenez-Ramos, M.C.; Rodriguez-Ramos, M. [CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Ceballos, J. [Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville 41092 (Spain); Linez, F. [Department of Applied Physics, Aalto University, 02150 Espoo (Finland); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland)

    2016-04-01

    The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the charge collection efficiency (CCE) vs bias voltages have been analyzed using a modified drift-diffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.

  8. New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

    OpenAIRE

    Steyer, Michael; Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara

    2015-01-01

    The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter,...

  9. High power n-type metal-wrap-through cells and modules using industrial processes

    Energy Technology Data Exchange (ETDEWEB)

    Guillevin, N.; Heurtault, B.J.B.; Geerligs, L.J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Jianming, Wang; Ziqian, Wang; Jinye, Zhai; Zhiliang, Wan; Shuquan, Tian; Wenchao, Zhao; Zhiyan, Hu; Gaofei, Li; Bo, Yu; Jingfeng, Xiong [Yingli Green Energy Holding Co.,Ltd. 3399 North Chaoyang Avenue, Baoding (China)

    2013-10-15

    This paper reviews our recent progress in the development of metal wrap through (MWT) cells and modules, produced from n-type Czochralski silicon wafers. The use of n-type silicon as base material allows for high efficiencies: for front emitter-contacted industrial cells, efficiencies above 20% have been reported. N-type MWT (nMWT) cells produced by industrial process technologies allow even higher efficiency due to reduced front metal coverage. Based on the same industrial technology, the efficiency of the bifacial n-MWT cells exceeds the efficiency of the n-type front-and-rear contact and bifacial 'Pasha' technology (n-Pasha) by 0.1-0.2% absolute, with a maximum nMWT efficiency of 20.1% so far. Additionally, full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. In a direct 60-cell module performance comparison, the n-MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter-contacted n-Pasha module. Thanks to reduced resistive losses in copper circuitry on the backfoil compared to traditional tabs, the CTM FF loss of the MWT module was reduced by about 2.2%abs. compared to the tabbed front emitter contact module. A full-size module made using MWT cells of 19.6% average efficiency resulted in a power output close to 280W. Latest results of the development of the n-MWT technology at cell and module level are discussed in this paper, including a recent direct comparison run between n-MWT and n-Pasha cells and results of n-MWT cells from 140{mu}m thin mono-crystalline wafers, with only very slight loss (1% of Isc) for the thin cells. Also reverse characteristics and effects of reverse bias for extended time at cell and module level are reported, where we find a higher tolerance of MWT modules than tabbed front contact modules for hotspots.

  10. Diffusion of acceptors in n-type and semi-insulating InP

    Science.gov (United States)

    Tuck, Brian

    2000-01-01

    When acceptors diffuse into an n-type semiconductor, both the surface concentration and the diffusion depth of the diffusant are influenced by the initial donor concentration. Similar interaction is observed between shallow acceptors and deep acceptors. Previous work describing the diffusion of zinc during MOCVD growth of InP is reviewed and compared to the diffusion of both zinc and cadmium into InP from the vapour phase. Interdiffusion between iron- and zinc-doped MOCVD layers is also considered. It is shown that these experiments can all be explained by a simple model involving Fermi level effects.

  11. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  12. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-xNanowires.

    Science.gov (United States)

    Wen, Feng; Tutuc, Emanuel

    2018-01-10

    We report the growth and characterization of epitaxial, coherently strained Si x Ge 1-x -Si core-shell nanowire heterostructure through vapor-liquid-solid growth mechanism for the Si x Ge 1-x core, followed by an in situ ultrahigh-vacuum chemical vapor deposition for the Si shell. Raman spectra acquired from individual nanowire reveal the Si-Si, Si-Ge, and Ge-Ge modes of the Si x Ge 1-x core and the Si-Si mode of the shell. Because of the compressive (tensile) strain induced by lattice mismatch, the core (shell) Raman modes are blue (red) shifted compared to those of unstrained bare Si x Ge 1-x (Si) nanowires, in good agreement with values calculated using continuum elasticity model coupled with lattice dynamic theory. A large tensile strain of up to 2.3% is achieved in the Si shell, which is expected to provide quantum confinement for electrons due to a positive core-to-shell conduction band offset. We demonstrate n-type metal-oxide-semiconductor field-effect transistors using Si x Ge 1-x -Si core-shell nanowires as channel and observe a 40% enhancement of the average electron mobility compared to control devices using Si nanowires due to an increased electron mobility in the tensile-strained Si shell.

  13. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  14. Molecular architecture of the N-type ATPase rotor ring from Burkholderia pseudomallei.

    Science.gov (United States)

    Schulz, Sarah; Wilkes, Martin; Mills, Deryck J; Kühlbrandt, Werner; Meier, Thomas

    2017-04-01

    The genome of the highly infectious bacterium Burkholderia pseudomallei harbors an atp operon that encodes an N-type rotary ATPase, in addition to an operon for a regular F-type rotary ATPase. The molecular architecture of N-type ATPases is unknown and their biochemical properties and cellular functions are largely unexplored. We studied the B. pseudomallei N 1 N o -type ATPase and investigated the structure and ion specificity of its membrane-embedded c-ring rotor by single-particle electron cryo-microscopy. Of several amphiphilic compounds tested for solubilizing the complex, the choice of the low-density, low-CMC detergent LDAO was optimal in terms of map quality and resolution. The cryoEM map of the c-ring at 6.1 Å resolution reveals a heptadecameric oligomer with a molecular mass of ~141 kDa. Biochemical measurements indicate that the c 17 ring is H + specific, demonstrating that the ATPase is proton-coupled. The c 17 ring stoichiometry results in a very high ion-to-ATP ratio of 5.7. We propose that this N-ATPase is a highly efficient proton pump that helps these melioidosis-causing bacteria to survive in the hostile, acidic environment of phagosomes. © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

  15. Unsymmetrically substituted n-type perylene bisimides with liquid crystalline properties

    Energy Technology Data Exchange (ETDEWEB)

    Wicklein, Andre; Thelakkat, Mukundan [Universitaet Bayreuth (Germany). Applied Functional Polymers

    2009-07-01

    Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal columnar CoIh mesophases, large spherulitic crystals or formation of stable amorphous phases upon rapid cooling from the isotropic phase can be observed. Due to high solubility in organic solvents, film preparation by solution processing is readily feasible. The interesting optical and thermal properties of these compounds allow these organic n-type semiconductors as potential materials for application in organic electronic devices, such as photovoltaics or OFETS.

  16. N-type calcium channel antibody-mediated paraneoplastic limbic encephalitis: a diagnostic challenge.

    Science.gov (United States)

    Kamiya-Matsuoka, Carlos; Blas-Boria, David; Williams, Michelle D; Garciarena, Pedro; Tummala, Sudhakar; Tremont-Lukats, Ivo W

    2014-03-15

    The etiology of encephalitis presents a diagnostic challenge and often remains a mystery. However, current technological advances using antibodies can enable a definitive diagnosis in cases that would previously have been suspected to be idiopathic or viral encephalitis. Our objective is to show that tonsil neuroendocrine carcinoma can present initially as limbic encephalitis mediated by N-type calcium channel antibodies and to highlight the diagnostic confusion before cancer detection. We report a rare case of neuroendocrine cancer presenting as limbic encephalopathy, Lambert-Eaton myasthenic syndrome and neuropathy. The patient was diagnosed and treated at The University of Texas MD Anderson Cancer Center in November 2011. Paraneoplastic limbic encephalitis was diagnosed based on clinical presentation of seizures, short-term memory loss, retrograde amnesia, disorientation, distractibility, and abulia; on the exclusion of brain metastases, CNS infection, stroke, metabolic or nutritional deficits, or medication-related events; and on CSF results with inflammatory findings and an abnormal electroencephalography study that showed seizure activity in the left temporal lobe. Serum paraneoplastic panel was positive for P/Q-type calcium channel antibody and N-type calcium channel antibody. Magnetic resonance imaging of brain was unremarkable. This case highlights limbic encephalitis as an atypical presentation of neuroendocrine cancer. It also illustrates how treatment of the underlying cancer can reverse limbic encephalitis and Lambert-Eaton myasthenic syndrome in a neuroendocrine carcinoma patient even before the paraneoplastic panel becomes negative. Published by Elsevier B.V.

  17. Development of high resolution N-type HPGe coaxial detectors and their applications

    International Nuclear Information System (INIS)

    Wu Shaoyun

    1995-10-01

    The development results of the high resolution N-type HPGe coaxial detectors are reported. The dependence of the reverse V-I L characteristic on the implantation dose of detector outside P + N junction was investigated under the condition of the fixed ion energy, beam intensity, and implantation angle. The experimental results indicate that a good detector can be steadily obtained at the higher implantation dose. When the implantation dose reaches 1.8 x 10 15 B + /cm 2 , the detectors have the ideal reverse V-I L characteristic. The detectors with good shock-proof performance are obtained by means of a fine mounting technology for N-type coaxial detectors. The detectors NCGL-1 and NCGL-2 have been successfully applied to the neutron capture gamma ray spectrum logging over ten drill wells at the coal field and the detector N49TB is used to the measuring system of the radioactive calibration well at the oil field. (10 refs., 6 figs., 2 tabs.)

  18. H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

    International Nuclear Information System (INIS)

    Wang Chinhua; Mandelis, Andreas; Tolev, Jordan; Burchard, Bernd; Meijer, Jan

    2007-01-01

    Industrial n-type Si wafers (resistivity of 5-10 Ω cm) were H + ion implanted with energies between 0.75 and 2.00 MeV, and the electronic transport properties of the implanted layer (recombination lifetime, carrier diffusion coefficient, and front-surface and implanted-interface recombination velocities s 1 and s 2 ) were studied using photocarrier radiometry (PCR). A quantitative fitting procedure to the diffusing photoexcited free-carrier density wave was introduced using a relatively simple two-layer PCR model in lieu of the more realistic but substantially more complicated three-layer model. The experimental trends in the transport properties of H + -implanted Si layers extracted from the PCR amplitude and phase data as functions of implantation energy corroborate a physical model of the implanted layer in which (a) overlayer damage due to the light H + ions decreases with increased depth of implantation at higher energies (b) the implanted region damage close to the interface is largely decoupled from the overlayer crystallinity, and (c) the concentration of implanted H + ions decreases at higher implantation energies at the interface, thus decreasing the degree of implantation damage at the interface proper

  19. Irradiation damage of SiC semiconductor device (I)

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

  20. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  1. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  2. Bulk oxides: asymmetry between p-and n-type transport properties

    Science.gov (United States)

    Maignan, Antioine

    2015-03-01

    The thermoelectric power (TEP) of transition metal oxides shows large difference depending on the sign of the charge carriers. In electron-doped oxides, the best TEs in terms of the figure of merit are heavily doped transparent conductors (as doped ZnO). The physics is very similar to that of semiconductors, though the defects chemistry differs: the existence of planar defects created by the doping elements, is far from the random distribution in semiconductors. In contrast the best p-types are layered cobaltites (CdI2 -type layers with edge-shared CoO6 octahedras). The Co cations adopt a low spin state. Both electronic correlations and spin entropy have to be considered to explain the S(T) curve for T 150K, the spin/orbital configurations and the doping level in the generalized Heikes formula are dominating. This description supported by the results obtained for perovskite ruthenates was recently unvalidated for the quadruple perovskite ACu3Ru4O12, showing very different S(T) without S saturation up to ~ 900K. Their Pauli paramagnetism enlights the role of the spins upon thermopower. Similarly, searching for other n-types, interesting TE properties have been found in Ba1.2Mn8O16: the S(T) evidences a charge/orbital ordering in this manganite (vMn = 3.7) coupled to an abrupt change in the unit-cell volume. Ba1.2Mn8O16, although of n-type, exhibits a cst. | S | ~ 92 μV.K-1 for T>400K, explained by the generalized Heikes formula rather used for p-type. This difference with other n-type oxides is related to the Mn3+/Mn4+ magnetism and the contribution of eg orbitals for the transport properties. In this presentation, the richness of the TE properties of metal transition oxides will be emphasized focusing on the important role of the spins.

  3. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon.

    Science.gov (United States)

    Zhang, Jiaguo; Pintilie, Ioana; Fretwurst, Eckhart; Klanner, Robert; Perrey, Hanno; Schwandt, Joern

    2012-05-01

    Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: doses of up to 1 GGy of 12 keV photons, up to 10(5) 12 keV photons per 200 µm × 200 µm pixel arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO(2) layer and of the Si-SiO(2) interface, using MOS (metal-oxide-semiconductor) capacitors manufactured on high-resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of capacitance/conductance-voltage (C/G-V) at different frequencies, as well as of thermal dielectric relaxation current (TDRC), have been performed. The data can be described by a dose-dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements.

  4. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  5. N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

    Science.gov (United States)

    Li, Shuai; Gao, Wenxiu; Li, Zhen; Cheng, Haoran; Lin, Jinxia; Cheng, Qijin

    2017-05-01

    N-type compensated silicon shows unusual distribution of resistivity as crystal grows compared to the n-type uncompensated silicon. In this paper, evolutions of resistivities with varied concentrations of boron and varied starting resistivities of the n-type silicon are intensively calculated. Moreover, reduction of carrier mobility is taken into account by Schindler’s modified model of carrier mobility for the calculation of resistivity of the compensated silicon. As for substrates of solar cells, optimized starting resistivity and corresponding concentration of boron are suggested for better uniformity of resistivity and higher yield (fraction with ρ >0.5 ~ Ω \\centerdot \\text{cm} ) of the n-type compensated Cz crystal rod. A two-step growth method is investigated to obtain better uniformity of resistivity of crystal rod, and this method is very practical especially for the n-type compensated silicon. Regarding the carrier lifetime, the recombination by shallow energy-level dopants is taken into account for the compensated silicon, and evolution of carrier lifetime is simulated by considering all main recombination centers which agrees well with our measured carrier lifetimes as crystal grows. The n-type compensated silicon shows a larger reduction of carrier lifetime compared to the uncompensated silicon at the beginning of crystal growth, and recombination with a oxygen-related deep defect is sufficient to describe the reduction of degraded lifetime. Finally, standard heterojunction with intrinsic thin-layer (HIT) solar cells are made with substrates from the n-type compensated silicon rod, and a high efficiency of 22.1% is obtained with a high concentration (0.8× {{10}16}~\\text{c}{{\\text{m}}-3} ) of boron in the n-type compensated silicon feedstock. However, experimental efficiencies of HIT solar cells based on the n-type compensated silicon show an average reduction of 4% along with the crystal length compared to the uncompensated silicon. The

  6. Mobility variation calculation in n type PbTe between 50 and 300 K

    International Nuclear Information System (INIS)

    Lasbley, A.; Granger, R.; Pelletier, C.M.; Rolland, S.

    1985-01-01

    The mobility calculation, with an iterative method, in n type lead telluride is developed. Results are presented in the temperature range 50-300 K where the mobility is mainly limited by diffusion by acoustical and optical phonons. The detailed form of the wave functions in the six-band model has been taken into account and also the variations, with temperature, of all the physical parameters necessary for the electronic distribution calculation under low electric field. Only the acoustic deformation potential and the temperature coefficient of the conduction band edge effective mass which are not well known have been taken as adjustable parameters. The agreement between calculated and experimental mobility values is very good. The calculations fit the detailed variations of mobility which are experimentally found in the temperature range 50-300 K and for electronic concentrations varying from 10 17 cm -3 to 10 19 cm -3 [fr

  7. Phosphorus and carrier density of heavily n-type doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Takinai, K.; Wada, K. [Department of Materials Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656 (Japan)

    2016-05-14

    The threshold current density of n-type, tensile-strained Ge lasers strongly depends on the electron density. Although optical net gain analyses indicate that the optimum electron density should be on the order of 1 × 10{sup 20} cm{sup −3} to get the lowest threshold, it is not a simple task to increase the electron density beyond the mid range of 10{sup 19} cm{sup −3}. The present paper analyzes the phenomenon where electron density is not proportional to phosphorus donor density, i.e., “saturation” phenomenon, by applying the so-called amphoteric defect model. The analyses indicate that the saturation phenomenon can be well explained by the charge compensation between the phosphorus donors (P{sup +}) and doubly negative charged Ge vacancies (V{sup 2−}).

  8. Solar Cells Based on Inks of n-Type Colloidal Quantum Dots

    KAUST Repository

    Ning, Zhijun

    2014-10-28

    © 2014 American Chemical Society. New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

  9. Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

    Energy Technology Data Exchange (ETDEWEB)

    Balasubramaniam, Y.; Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be; Janssens, S. D.; Nesládek, M.; Haenen, K., E-mail: ken.haenen@uhasselt.be [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sakr, G.; Jomard, F.; Barjon, J. [Groupe d' Etude de la Matière Condensée (GEMaC), Université de Versailles St. Quentin en Yvelines, CNRS, Université Paris Saclay, 45 ave. des Etats-Unis, F-78035 Versailles (France); Turner, S.; Lu, Y.-G.; Verbeeck, J. [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Dexters, W. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Soltani, A. [Institut d' Electronique, Microélectronique et Nanotechnologie (IEMN/CNRS 8520), Université Lille, Ave. Poincaré-BP 60069, F-59652 Villeneuve d' Ascq (France)

    2016-08-08

    The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.

  10. N-type thermoelectric performance of functionalized carbon nanotube-filled polymer composites.

    Directory of Open Access Journals (Sweden)

    Dallas D Freeman

    Full Text Available Carbon nanotubes (CNTs were functionalized with polyethyleneimine (PEI and made into composites with polyvinyl acetate (PVAc. CNTs were dispersed with different amounts of sodium dodecylbenzenesulfonate (SDBS prior to the PEI functionalization. The resulting samples exhibit air-stable n-type characteristics with electrical conductivities as great as 1500 S/m and thermopowers as large as -100 µV/K. Electrical conductivity and thermopower were strongly affected by CNT dispersion, improving the properties with better dispersion with high concentrations of SDBS. This improvement is believed to be due to the increase in the number of tubes that are evenly coated with PEI in a better-dispersed sample. Increasing the amount of PEI relative to the other constituents positively affects thermopower but not conductivity. Air exposure reduces both thermopower and conductivity presumably due to oxygen doping (which makes CNTs p-type, but stable values were reached within seven days following sample fabrication.

  11. Monte Carlo based geometrical model for efficiency calculation of an n-type HPGe detector

    Energy Technology Data Exchange (ETDEWEB)

    Padilla Cabal, Fatima, E-mail: fpadilla@instec.c [Instituto Superior de Tecnologias y Ciencias Aplicadas, ' Quinta de los Molinos' Ave. Salvador Allende, esq. Luaces, Plaza de la Revolucion, Ciudad de la Habana, CP 10400 (Cuba); Lopez-Pino, Neivy; Luis Bernal-Castillo, Jose; Martinez-Palenzuela, Yisel; Aguilar-Mena, Jimmy; D' Alessandro, Katia; Arbelo, Yuniesky; Corrales, Yasser; Diaz, Oscar [Instituto Superior de Tecnologias y Ciencias Aplicadas, ' Quinta de los Molinos' Ave. Salvador Allende, esq. Luaces, Plaza de la Revolucion, Ciudad de la Habana, CP 10400 (Cuba)

    2010-12-15

    A procedure to optimize the geometrical model of an n-type detector is described. Sixteen lines from seven point sources ({sup 241}Am, {sup 133}Ba, {sup 22}Na, {sup 60}Co, {sup 57}Co, {sup 137}Cs and {sup 152}Eu) placed at three different source-to-detector distances (10, 20 and 30 cm) were used to calibrate a low-background gamma spectrometer between 26 and 1408 keV. Direct Monte Carlo techniques using the MCNPX 2.6 and GEANT 4 9.2 codes, and a semi-empirical procedure were performed to obtain theoretical efficiency curves. Since discrepancies were found between experimental and calculated data using the manufacturer parameters of the detector, a detail study of the crystal dimensions and the geometrical configuration is carried out. The relative deviation with experimental data decreases from a mean value of 18-4%, after the parameters were optimized.

  12. Two stream instability in n-type gallium arsenide semiconductor quantum plasma

    Science.gov (United States)

    Ghosh, S.; Muley, Apurva

    2018-01-01

    By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

  13. Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

    2015-11-15

    N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

  14. SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  15. Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Linnarsson, Margareta

    shifts with increasing emission angle in sample #d, and the FWHM starts to decrese and becomes more dramatic when the emission angle is larger than 45 degrees. Our results revealed that the optimized way to achieve intense DAP emission in B-N-doped 6H-SiC is to use low-level n-type doping with both B...

  16. Spatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation

    NARCIS (Netherlands)

    Vermang, B.; Werner, F.; Stals, W; Lorenz, A.; Rothschild, A.; Racz, A.; John, J.; Poortmans, J.; Mertens, R.; Gortzen, R.M.W.; Poodt, P.W.G.; Tiba, V.; Roozeboom, F.; Schmidt, J.

    2011-01-01

    A next generation material for surface passivation of crystalline Si is Al2O3. It has been shown that both thermal and plasma-assisted (PA) atomic layer deposition (ALD) A l2O3 provide an adequate level of surface passivation for both p- and n-type Si substrates. However, conventional time-resolved

  17. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    Science.gov (United States)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  18. Fabrication of Multilayer-Type Mn-Si Thermoelectric Device

    Science.gov (United States)

    Kajitani, T.; Ueno, T.; Miyazaki, Y.; Hayashi, K.; Fujiwara, T.; Ihara, R.; Nakamura, T.; Takakura, M.

    2014-06-01

    This research aims to develop a direct-contact manganese silicon p/ n multilayer-type thermoelectric power generation block. p-type MnSi1.74 and n-type Mn0.7Fe0.3Si1.68 ball-milled powders with diameter of about 10 μm or less were mixed with polyvinyl butyl alcohol diluted with methylbenzene at pigment volume concentration of approximately 70%. The doctor-blade method produced 45- μm-thick p- and n-type pigment plates. The insulator, i.e., powdered glass, was mixed with cellulose to form insulator slurry. Lamination of manganese silicide pigment layers and screen-printed insulator layers was carried out to fabricate multilayer direct-contact thermoelectric devices. Hot pressing and spark plasma sintering were carried out at 450°C and 900°C, respectively. Four to 30 thermoelectric (TE) p/ n pairs were fabricated in a 10 mm × 10 mm × 10 mm sintered TE block. The maximum output was 11.7 mW/cm2 at a temperature difference between 20°C and 700°C, which was about 1/85 of the ideal power generation estimated from the thermoelectric data of the bulk MnSi1.74 and Mn0.7Fe0.3Si1.68 materials. A power generation test using an engine test bench was also carried out.

  19. Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

    Science.gov (United States)

    Samanta, Piyas

    2017-10-01

    The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

  20. SiGe/Si electronics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, K.L.; Karunasiri, R.P.G. [Univ. of California, Los Angeles, CA (United States)

    1993-05-01

    Recently, there is an increased interest in the use of SiGe layered material for integration with Si technology. SiGe offers the opportunity for the first time to realize the advantages of heterojunctions in Si-based technology. In this article, the present status of the SiGe epitaxial growth techniques will be discussed from the point of view of device application. New directions will be presented. Next, electronic devices to be reviewed include bipolars and field effect transistors. The progress of tunneling devices will also be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. These will include Si-based detectors and modulators based on interband and intersubband transitions. One of the focuses will be the normal incidence operation for intersubband devices. Finally, the current status in the quest of light emitters will be briefly addressed. 44 refs., 15 figs.

  1. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  2. N-type high-performance multicrystalline and mono-like silicon wafers with lifetimes above 2 ms

    Science.gov (United States)

    Pheng Phang, Sieu; Cheong Sio, Hang; Yang, Chia-Fu; Lan, Chung-Wen; Yang, Yu-Min; Wen-Huai Yu, Andy; Sung-Lin Hsu, Bruce; Wen-Ching Hsu, Chuck; Macdonald, Daniel

    2017-08-01

    Combined with advanced crystal growth technology and reduced dislocation densities, the higher tolerance to metal contamination of n-type silicon makes n-type cast-grown silicon a potential option for low cost high quality substrates for solar cells. Using a combination of photoconductance based lifetime testing and photoluminescence imaging, we have investigated the carrier lifetime in wafers from the bottom, middle, and top parts of a n-type high-performance multicrystalline (HPM) silicon ingot, and wafers from n-type mono-like silicon ingots after each high temperature solar cell processes, including after boron diffusion, phosphorus diffusion, and hydrogenation. Although boron diffusion leads to a degradation of the sample lifetime, phosphorus diffusion and hydrogenation is effective at recovering the lifetime in the intra-grain region and at the grain boundaries respectively. Quasi-steady-state photoconductance (QSSPC) measurements show that the arithmetic average lifetime of HPM silicon wafers and mono-like silicon wafers can reach up to 1.8 and 3.3 ms respectively for a process sequence including a boron diffusion, with corresponding implied open circuit voltage of about 720 mV. If the boron diffusion can be avoided, average lifetimes up to 3.0 and 6.6 ms can be achieved respectively, highlighting the excellent potential of n-type cast-grown materials.

  3. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  4. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  5. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  6. Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

    Science.gov (United States)

    Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

    2011-11-01

    Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

  7. Optimization of the n-type HPGe detector parameters to theoretical determination of efficiency curves

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, A.; Correa-Alfonso, C.M.; Lopez-Pino, N.; Padilla-Cabal, F.; D'Alessandro, K.; Corrales, Y.; Garcia-Alvarez, J. A.; Perez-Mellor, A.; Baly-Gil, L.; Machado, A.

    2011-01-01

    A highly detailed characterization of a 130 cm 3 n-type HPGe detector, employed in low - background gamma spectrometry measurements, was done. Precise measured data and several Monte Carlo (MC) calculations have been combined to optimize the detector parameters. HPGe crystal location inside the Aluminum end-cap as well as its dimensions, including the borehole radius and height, were determined from frontal and lateral scans. Additionally, X-ray radiography and Computed Axial Tomography (CT) studies were carried out to complement the information about detector features. Using seven calibrated point sources ( 241 Am, 133 Ba, 57,60 Co, 137 Cs, 22 Na and 152 Eu), photo-peak efficiency curves at three different source - detector distances (SDD) were obtained. Taking into account the experimental values, an optimization procedure by means of MC simulations (MCNPX 2.6 code) were performed. MC efficiency curves were calculated specifying the optimized detector parameters in the MCNPX input files. Efficiency calculation results agree with empirical data, showing relative deviations lesser 10%. (Author)

  8. Simulation design of P–I–N-type all-perovskite solar cells with high efficiency

    International Nuclear Information System (INIS)

    Du Hui-Jing; Wang Wei-Chao; Gu Yi-Fan

    2017-01-01

    According to the good charge transporting property of perovskite, we design and simulate a p–i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite charge transporting layers and the perovskite absorber constitute the all-perovskite cell. By modulating the cell parameters, such as layer thickness values, doping concentrations and energy bands of n-, i-, and p-type perovskite layers, the all-perovskite solar cell obtains a high power conversion efficiency of 25.84%. The band matched cell shows appreciably improved performance with widen absorption spectrum and lowered recombination rate, so weobtain a high J _s_c of 32.47 mA/cm"2. The small series resistance of the all-perovskite solar cell also benefits the high J _s_c. The simulation provides a novel thought of designing perovskite solar cells with simple producing process, low production cost and high efficient structure to solve the energy problem. (paper)

  9. Enhanced performance of dispenser printed MA n-type Bi₂Te₃ composite thermoelectric generators.

    Science.gov (United States)

    Madan, Deepa; Wang, Zuoqian; Chen, Alic; Juang, Rei-Cheng; Keist, Jay; Wright, Paul K; Evans, Jim W

    2012-11-01

    This work presents performance advancements of dispenser printed composite thermoelectric materials and devices. Dispenser printed thick films allow for low-cost and scalable manufacturing of microscale energy harvesting devices. A maximum ZT value of 0.31 has been achieved for mechanically alloyed (MA) n-type Bi₂Te₃-epoxy composite films with 1 wt % Se cured at 350 °C. The enhancement of ZT is a result of increase in the electrical conductivity through the addition of Se, which ultimately lowers the sintering temperature (350 °C). A 62 single-leg thermoelectric generator (TEG) prototype with 5 mm ×700 μm × 120 μm printed element dimensions was fabricated on a custom designed polyimide substrate with thick metal contacts. The prototype device produced a power output of 25 μW at 0.23 mA current and 109 mV voltage for a temperature difference of 20 °C, which is sufficient for low power generation for autonomous microsystem applications.

  10. P/Q- and N-type calcium-channel antibodies: Oncological, neurological, and serological accompaniments.

    Science.gov (United States)

    Zalewski, Nicholas L; Lennon, Vanda A; Lachance, Daniel H; Klein, Christopher J; Pittock, Sean J; Mckeon, Andrew

    2016-08-01

    Voltage-gated calcium-channel autoimmunity (VGCC-P/Q and VGCC-N types) occurs beyond Lambert-Eaton syndrome and lung cancer. We reviewed records for 236 Mayo Clinic patients with VGCC antibodies found in evaluation for paraneoplastic neurological autoimmunity (generally without myasthenic syndromes). VGCC autoantibodies were detected in 3.4% of neurological patients, 1.7% of healthy controls, and 4% of neurologically asymptomatic lung cancer controls. Fifty neurological patients (21%) had ≥ 1 neoplasm, historically (46) or detected prospectively [small-cell lung carcinoma (2), breast adenocarcinoma (2), lymphoma (1), and suspected tonsillar carcinoma (1)]. Autoimmune neurological diagnosis frequencies (encephalopathy, ataxia, myelopathy, neuropathy, neuromuscular junction disorder, and myopathy) among patients with medium values (24%; 0.10-0.99 nmol/L) or low values (19%; 0.03-0.10 nmol/L) were fewer than among patients with antibody values exceeding 1.00 nmol/L (71%; P = 0.02 and 0.004, respectively). Among neuronal VGCC-autoantibody-seropositive patients, autoimmune neurological phenotypes and cancer types are diverse. Cautious interpretation of results (particularly medium and low values) is advised. Muscle Nerve, 2016 Muscle Nerve 54: 220-227, 2016. © 2016 Wiley Periodicals, Inc.

  11. A clinical implementation of in vivo dosimetry with n-type Isorad semiconductor diodes

    Directory of Open Access Journals (Sweden)

    Rutonjski Laza M.

    2014-01-01

    Full Text Available The study was aimed to check the radiotherapy treatment accuracy and definition of action levels during implementation of in vivo dosimetry as a part of quality assurance program. The calibration and correction factors for in vivo entrance dose measurements for six n-type Isorad semiconductor diodes were determined as recommended by the European Society for Radiotherapy and Oncology Booklet No. 5. The patients for in vivo measurements have been divided in groups, according to the treatment site/techique, in order to investigate and detect the groups where the uncertainty was larger or where a systematic error occurred. The tolerance/action levels for all groups were also defined and checked. In this study, the entrance dose measurements were performed for total of 451 treatment fields, and 338 patients over one year period. The mean value and the standard deviation for different groups were: breast +1.0% ± 2.89%(1 SD, brain, and head and neck - +0.74% ± 2.04%(1 SD, and isocentric pelvis and abdomen - +0.1% ± 2.86%(1 SD. All measurements - +0.72% ± 2.64%(1 SD. In our experience, systematic in vivo dosimetry proved to be a very useful tool for quality assurance of patient's plan and treatment, both in detecting systematic errors and for estimating the accuracy of radiotherapy treatment delivery.

  12. Positron annihilation measurements in high-energy alpha-irradiated n-type gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Sandip; Mandal, Arunava; SenGupta, Asmita [Visva-Bharati, Department of Physics, Santiniketan, West Bengal (India); Roychowdhury, Anirban [UGC-DAE Consortium for Scientific Research, Kolkata Centre, Kolkata, West Bengal (India)

    2015-07-15

    Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements have been carried out in 40-MeV alpha-irradiated n-type GaAs. After irradiation, the sample has been subjected to an isochronal annealing over temperature region of 25-800 C with an annealing time of 30 min at each set temperature. After each annealing, the positron measurements are taken at room temperature. Formation of radiation-induced defects and their recovery with annealing temperature are investigated. The lifetime spectra of the irradiated sample have been fitted with two lifetimes. The average positron lifetime τ{sub avg} = 244 ps at room temperature after irradiation indicates the presence of defects, and the value of τ{sub 2} (262 ps) at room temperature suggests that the probable defects are mono-vacancies. Two distinct annealing stages in τ{sub avg} at 400-600 C and at 650-800 C are observed. The variations in line-shape parameter (S) and defect-specific parameter (R) during annealing in the temperature region 25-800 C resemble the behaviour of τ{sub avg} indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 400 and 800 C. (orig.)

  13. Stability of alkali-metal hydrides: effects of n-type doping

    Science.gov (United States)

    Olea Amezcua, Monica Araceli; de La Peña Seaman, Omar; Rivas Silva, Juan Francisco; Heid, Rolf; Bohnen, Klaus-Peter

    Metal hydrides could be considered ideal solid-state hydrogen storage systems, they have light weight and high hydrogen volumetric densities, but the hydrogen desorption process requires excessively high temperatures due to their high stability. Efforts have been performed to improve their dehydrogenation properties, based on the introduction of defects, impurities and doping. We present a systematic study of the n-type (electronic) doping effects on the stability of two alkali-metal hydrides: Na1-xMgxH and Li1-xBexH. These systems have been studied within the framework of density functional perturbation theory, using a mixed-basis pseudopotential method and the self-consistent version of the virtual crystal approximation to model the doping. The full-phonon dispersions are analyzed for several doping content, paying special attention to the crystal stability. It is found a doping content threshold for each system, where they are close to dynamical instabilities, which are related to charge redistribution in interstitial zones. Applying the quasiharmonic approximation, the vibrational free energy, the linear thermal expansion and heat capacities are obtained for both hydrides systems and are analyzed as a function of the doping content. This work is partially supported by the VIEP-BUAP 2016 and CONACYT-México (No.221807) projects.

  14. Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD

    Directory of Open Access Journals (Sweden)

    M. Maleki

    2015-12-01

    Full Text Available In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500◦C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

  15. Metal contacts in nanocrystalline n-type GaN: Schottky diodes.

    Science.gov (United States)

    Das, S N; Sarangi, S; Sahu, S N; Pal, A K

    2009-04-01

    Contact properties in nanocrystalline n-GaN in thin film form were studied by depositing nanocrystalline films onto aluminium coated fused silica substrates by high pressure sputtering of Si (1 at%) doped GaN target. Schottky diodes were realized with Au, Ni and Pd as top contacts on the nanocrystalline n-GaN films to examine the contact properties of the diodes thus formed. Variation of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky diodes were recorded at different temperatures and analyzed in the light of the existing theories.

  16. Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

    International Nuclear Information System (INIS)

    Huang Yanhong; Zhao Kun; Lu Huibin; Jin Kuijuan; He Meng; Chen Zhenghao; Zhou Yueliang; Yang Guozhen

    2006-01-01

    High-quality heterojunctions consisting of n-type amorphous LaAlO 3- δ and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO 3- δ /Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications

  17. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  18. Functionalized methanofullerenes used as n-type materials in bulk-heterojunction polymer solar cells and in field-effect transistors.

    Science.gov (United States)

    Yang, Changduk; Kim, Jin Young; Cho, Shinuk; Lee, Jae Kwan; Heeger, Alan J; Wudl, Fred

    2008-05-21

    The synthesis of two well-solubilized [60]methanofullerene derivatives ( p- EHO-PCBM and p- EHO-PCBA) is presented for usage in organic solar cells and in field-effect transistors. The para position of the PCBM's phenyl ring was substituted with a branched alkoxy side chain, which contributes to higher solubility, facilitating synthesis, purification, and processing. We find a small change of the open-circuit voltage ( V oc) as a slight improvement in performance upon application in P3HT/[60]methanofullerene bulk-heterojunction-photovoltaic cells, when compared to PCBM, because of the electron donation of the alkoxy group. In the case of the devices with a TiO x layer, the best power conversion efficiencies (PCE, eta e) is observed in a layered structure of P3HT/ p- EHO-PCBA/TiO x (eta e = 2.6%), which slightly exceeds that of P3HT/PCBM/TiO x (eta e = 2.3%) under conditions reported here. This can be attributed, in part, to the carboxylic acid group in p- EHO-PCBA that leads to an effective interface interaction between the active layer and TiO x phase. In addition, n-channel organic field-effect transistor (OFET) devices were fabricated with thin films of p- EHO-PCBM and p- EHO-PCBA, respectively cast from solution on SiO 2/Si substrates. The values of field-effect mobility (mu) for p- EHO-PCBM and p- EHO-PCBA are 1 x 10 (-2) and 1.6 x 10 (-3) cm (2)/V.s, respectively. The results in this paper demonstrate the effects of a carboxylic acid group and an electron-donating substituent in [60]methanofullerenes as n-type materials with respect to organic solar cells and OFET applications.

  19. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.

    2014-05-12

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Identification of VanN-type vancomycin resistance in an Enterococcus faecium isolate from chicken meat in Japan.

    Science.gov (United States)

    Nomura, Takahiro; Tanimoto, Koichi; Shibayama, Keigo; Arakawa, Yoshichika; Fujimoto, Shuhei; Ike, Yasuyoshi; Tomita, Haruyoshi

    2012-12-01

    Five VanN-type vancomycin-resistant Enterococcus faecium strains were isolated from a sample of domestic chicken meat in Japan. All isolates showed low-level resistance to vancomycin (MIC, 12 mg/liter) and had the same pulsed-field gel electrophoresis profile. The vancomycin resistance was encoded on a large plasmid (160 kbp) and was expressed constitutively. The VanN-type resistance operon was identical to the first resistance operon to be reported, with the exception of a 1-bp deletion in vanT(N) and a 1-bp substitution in vanS(N).

  1. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.

    2013-11-07

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

  2. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    International Nuclear Information System (INIS)

    Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro

    2016-01-01

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R sh n-type  = 95 Ω/□ and R sh p-type  = 120 Ω/□). An efficiency of 19.2% (V oc  = 673 mV, J sc  = 38.0 mA/cm 2 , FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V OC of 696 mV was also measured

  3. n-type In2S3 films deposited by pulsed laser deposition: effect of laser power on the properties of the films

    Science.gov (United States)

    Wu, Chunyan; Mao, Dun; Liu, Zhu; Liang, Qi; Chen, Shirong; Yu, Yongqiang; Wang, Li; Luo, Linbao; Xu, Jun

    2015-05-01

    Pulsed laser deposition (PLD) with different levels of laser power was first used to deposit In2S3 films from homemade, high-purity In2S3 targets. This process was followed by post-annealing in an N2 atmosphere to improve the films’ crystallinity and conductivity. The annealed films were verified to be stoichiometric, body-centered, tetragonal In2S3 with the preferred orientation (103). The bandgap of the films decreased from 2.8 to 2.2 eV with an increase in the laser power, which was believed to be the result of the grain growth caused by the higher laser power. The electrical transport property of the bottom-gate field-effect transistor revealed the n-type conduction of the annealed In2S3 films, and the heterojunction p+-Si/annealed In2S3 film showed remarkable photovoltaic behavior upon light illumination, indicating that PLD-deposited In2S3 films may have great potential as a buffer layer in thin-film solar cells. What’s more, doped In2S3 films can be easily realized due to the fairly stoichiometric transfer of the PLD method.

  4. Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Barbero, Nicolò; Forneris, Jacopo [Physics Department, NIS Research Centre and CNISM, University of Torino, Via P. Giuria 1, 10250 Torino (Italy); Grilj, Veljko; Jakšić, Milko [Department for Experimental Physics, Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Räisänen, Jyrki [Department of Physics, University of Helsinki, P.O. Box 43, 00014 Helsinki (Finland); Simon, Aliz [International Atomic Energy Agency, Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Skukan, Natko [Department for Experimental Physics, Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Vittone, Ettore, E-mail: ettore.vittone@unito.it [Physics Department, NIS Research Centre and CNISM, University of Torino, Via P. Giuria 1, 10250 Torino (Italy)

    2015-04-01

    Highlights: •Study of charge collection efficiency degradation (CCE) in Si diode due to MeV H irradiation. •CCE evaluated by micro-IBIC using 4.5 MeV Li ions to probe the damaged region. •Generation of H-donors, which perturb the electrostatic properties of the diode. -- Abstract: We present the analysis of the charge collection efficiency (CCE) degradation of float zone grown n-type silicon detectors irradiated with 1.3, 2.0 and 3.0 MeV protons. The analysis was carried out by irradiating small regions (50 × 50 μm{sup 2}) with a proton microbeam at fluences ranging from 10{sup 11} to 4·10{sup 12} ions/cm{sup 2} and probing the effect of irradiation by measuring the 4.5 MeV Li ion induced charge in full depletion conditions. The CCE degradation as function of the proton fluence shows an unexpected deviation from the linear behavior predicted by the Shockley–Read–Hall model of carrier recombination. The build-up of excess hydrogen related donors due to proton irradiations is suggested to be the cause of a significant perturbation of the electrostatic properties of the diode, which drastically change the electron trajectories and hence the induced charge mechanism.

  5. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  6. Tin-vacancy acceptor levels in electron-irradiated n-type silicon

    DEFF Research Database (Denmark)

    Larsen, A. Nylandsted; Goubet, J. J.; Mejlholm, P.

    2000-01-01

    annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal...... temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating...... pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap....

  7. Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO

    Science.gov (United States)

    Shen, Zhan-Wei; Zhang, Feng; Dimitrijev, Sima; Han, Ji-Sheng; Yan, Guo-Guo; Wen, Zheng-Xin; Zhao, Wan-Shun; Wang, Lei; Liu, Xing-Fang; Sun, Guo-Sheng; Zeng, Yi-Ping

    2017-09-01

    Not Available Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113 and 61574140), the Beijing NOVA Program, China (Grant No. Z1611000049161132016071), China Academy of Engineering Physics (CAEP) Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201502), the Beijing Municipal Science and Technology Commission Project, China (Grant Nos. Z161100002116018 and D16110300430000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2012098)

  8. Simultaneous optimization and simulation of a-Si(1-x)C(x) layers on n-type silicon solar cells

    NARCIS (Netherlands)

    Vesaghi, MA; Asadi, K

    2005-01-01

    We have applied Rosenbrock's optimization algorithm to obtain the optimized efficiency of a solar cell and its structural parameters. To obtain these parameters. we have developed a computer pro-ram for simultaneous optimization and simulation of the solar cell. We have used experimental data on the

  9. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    Science.gov (United States)

    Mastari, Marouane; Charles, Matthew; Bogumilowicz, Yann; Thai, Quang Minh; Pimenta Barros, Patricia; Argoud, Maxime; Papon, Anne-Marie; Gergaud, Patrice; Landru, Didier; Kim, Youngpil; Hartmann, Jean Michel

    2018-04-12

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometer-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterized by AFM, XRD and TEM. Smooth SiGe surfaces and full strain relaxation were obtained in the 650-700°C range for 2D SiGe layers grown either on Si or SiGe nano-pillars. © 2018 IOP Publishing Ltd.

  10. Turán type inequalities for the partial sums of the generating functions of Bernoulli and Euler numbers

    DEFF Research Database (Denmark)

    Koumandos, Stamatis; Pedersen, Henrik Laurberg

    2012-01-01

    Turán type inequalities for the partial sums of the generating functions of the Bernoulli and Euler numbers are established. They are shown to follow from a general result relating Turán inequalities of partial sums with Turán inequalities of the corresponding remainders in any Maclaurin expansion...

  11. Phonon-limited mobility in n-type single-layer MoS2 from first principles

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.

    2012-01-01

    We study the phonon-limited mobility in intrinsic n-type single-layer MoS2 for temperatures T > 100 K. The materials properties including the electron-phonon interaction are calculated from first principles and the deformation potentials and Frohlich interaction in single-layer MoS2 are establish...

  12. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  13. Electrical Behavior on N-Type Dopants in AlGaAs Alloys: Shallow Levels and DX Centers

    Science.gov (United States)

    1990-11-01

    FORCE OFFICE OF SCIENTIFIC RESEARCH GRANT AFOSR-88-0316 EOSRD-LONDON DEPARTAMENTO DE INGENIERIA ELECTRONICA E.T.S. INGENIEROS DE TELECOMUNICACION ...INGENIEROS DE TELECOMUNICACION . MADRID OCTOBER 1990 2 ABSTRACT The electrical properties of n- type AlxGaixAs, for x > 0.2, are governed by deep donor

  14. N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stability

    NARCIS (Netherlands)

    Shao, S.; Chen, Z.; Fang, H. -H.; ten Brink, G. H.; Bartesaghi, D.; Adjokatse, S.; Koster, L. J. A.; Kooi, B. J.; Facchetti, A.; Loi, M. A.

    2016-01-01

    We studied three n-type polymers of the naphthalenediimide-bithiophene family as electron extraction layers (EELs) in hybrid perovskite solar cells. The recombination mechanism in these devices is found to be heavily influenced by the EEL transport properties. The maximum efficiency of the devices

  15. Impedance and g-r noise of n-type gold-doped silicon under space-charge conditions

    NARCIS (Netherlands)

    Kleinpenning, Th.G.M.

    1972-01-01

    Impedance and current-noise measurements were made on n-type gold-doped silicon single crystals provided with electron-injecting contacts. The d.c. current is proportional to the applied voltage in the ohmic regime considered here. The capacitance is both frequency and d.c. bias dependent at

  16. Exploring High-Performance n-Type Thermoelectric Composites Using Amino-Substituted Rylene Dimides and Carbon Nanotubes.

    Science.gov (United States)

    Wu, Guangbao; Zhang, Zhi-Guo; Li, Yongfang; Gao, Caiyan; Wang, Xin; Chen, Guangming

    2017-06-27

    Taking advantage of the high electrical conductivity of a single-walled carbon nanotube (SWCNT) and the large Seebeck coefficient of rylene diimide, a convenient strategy is proposed to achieve high-performance n-type thermoelectric (TE) composites containing a SWCNT and amino-substituted perylene diimide (PDINE) or naphthalene diimide (NDINE). The obtained n-type composites display greatly enhanced TE performance with maximum power factors of 112 ± 8 (PDINE/SWCNT) and 135 ± 14 (NDINE/SWCNT) μW m -1 K -2 . A short doping time of 0.5 h can ensure high TE performance. The corresponding TE module consisting of five p-n junctions reaches a large output power of 3.3 μW under a 50 °C temperature gradient. In addition, the n-type composites exhibit high air stability and excellent thermal stability. This design strategy benefits the future fabricating of high-performance n-type TE materials and devices.

  17. Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

    International Nuclear Information System (INIS)

    Sethuraman, Kunjithapatham; Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu; Shin, Paikkyun

    2012-01-01

    Fluorinated copper-phthalocyanine (F 16 CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ FE ), the on/off current ratio (I on/off ), and the threshold voltage (V th ). A relatively high field effect mobility of 6.0 x 10 -3 cm 2 /Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10 4 and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F 16 CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F 16 CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F 16 CuPc-OFET was closely related to the crystallinity and the orientation of the F 16 CuPc thin film.

  18. CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Meng [Arizona State Univ., Mesa, AZ (United States)

    2015-03-01

    The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells. These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6

  19. Upgrade Recycling of Cast Iron Scrap Chips towards β-FeSi2 Thermoelectric Materials

    Science.gov (United States)

    Laila, Assayidatul; Nanko, Makoto; Takeda, Masatoshi

    2014-01-01

    The upgrade recycling of cast-iron scrap chips towards β-FeSi2 thermoelectric materials is proposed as an eco-friendly and cost-effective production process. By using scrap waste from the machining process of cast-iron components, the material cost to fabricate β-FeSi2 is reduced and the industrial waste is recycled. In this study, β-FeSi2 specimens obtained from cast iron scrap chips were prepared both in the undoped form and doped with Al and Co elements. The maximum figure of merit (ZT) indicated a thermoelectric performance of approximately 70% in p-type samples and nearly 90% in n-type samples compared to β-FeSi2 prepared from pure Fe and other published studies. The use of cast iron scrap chips to produce β-FeSi2 shows promise as an eco-friendly and cost-effective production process for thermoelectric materials. PMID:28788193

  20. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  1. Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  2. Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    Science.gov (United States)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  3. Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

    Directory of Open Access Journals (Sweden)

    Xiao-Ying Zhang

    2017-12-01

    Full Text Available Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si solar cells. Hafnium oxide (HfO2 has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD. Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC solar cells with the HfO2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.

  4. Impact of dopant concentrations on emitter formation with spin on dopant source in n-type crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Singha, Bandana; Solanki, Chetan Singh [Department of Energy Science and Technology, Indian Institute of Technology, Bombay Mumbai-400076, Maharashtra (India)

    2016-05-06

    Use of a suitable dopant source for emitter formation is an essential requirement in n-type crystalline silicon solar cells. Boron spin on dopant source, used as alternative to mostly used BBr{sub 3} liquid source, can yield an emitter with less diffusion induced defects under controlled conditions. Different concentrations of commercially available spin on dopant source is used and optimized in this work for sheet resistance values of the emitter ranging from 30 Ω/□ to 70 Ω/□ with emitter doping concentrations suitable for ohmic contacts. The dopant concentrations diluted with different ratios improves the carrier lifetime and thus improves the emitter performance. Hence use of suitable dopant source is essential in forming emitters in n-type crystalline silicon solar cells.

  5. Grain Size and Interface Dependence of Bias Stress Stability of n-Type Organic Field Effect Transistors.

    Science.gov (United States)

    Ahmed, Rizwan; Simbrunner, Clemens; Baig, M A; Sitter, H

    2015-10-14

    The effect of grain size and interface dependence of bias stress stability of C60-based n-type organic field effect transistors (OFETs) has been studied. It has been realized that, with increasing grain size of C60, the bias stress induced threshold voltage shift can be controlled and this effect is mainly attributed to the mechanism of charge trapping at grain boundaries. It is further studied that the growth of C60 on the surface of parylene at elevated substrate temperature leads to the creation of radicals at the interface between the active layer and the gate dielectric. These radicals help to improve the bias stress stability of C60-based n-type OFETs. For achieving the bias stress stability, we have presented a procedure of creation of radicals at the interface between C60 and parylene in single gate OFETs instead of dual gate OFETs.

  6. Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

    Directory of Open Access Journals (Sweden)

    Luis Villamagua

    2016-11-01

    Full Text Available We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattice in order to find out the equilibrium configurations and to analyze corresponding density of states (DOS patterns along with the electron localization function (ELF. It has been demonstrated that hydrogen could be solely responsible for the n-type conductivity whereas the oxygen vacancy appears to have not a notable influence upon it. The computational analysis is backed up by some experimental data for undoped tin dioxide.

  7. Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Sethuraman, Kunjithapatham [Madurai Kamaraj University, Madurai (India); Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu [Aichi Institute of Technology, Toyota City (Japan); Shin, Paikkyun [Inha University, Incheon (Korea, Republic of)

    2012-07-15

    Fluorinated copper-phthalocyanine (F{sub 16}CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ{sub FE}), the on/off current ratio (I{sub on/off}), and the threshold voltage (V{sub th}). A relatively high field effect mobility of 6.0 x 10{sup -3} cm{sup 2}/Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10{sup 4} and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F{sub 16}CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F{sub 16}CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F{sub 16}CuPc-OFET was closely related to the crystallinity and the orientation of the F{sub 16}CuPc thin film.

  8. Thermoelectric properties of rare earth-doped n-type Bi2Se0∙3Te2∙7 ...

    Indian Academy of Sciences (India)

    Administrator

    The thermoelectric property results show that Ce, Y and Sm doping not only help to decrease the electrical resistivity, but also help to ... of solid-state electronic cooling and power generation. The efficiency of TE devices is strongly ... Bi2Te3 and its related alloys, including p-type BixSb2–x. Te3 and n-type Bi2Te3–xSex, still ...

  9. Huwentoxin-XVI, an analgesic, highly reversible mammalian N-type calcium channel antagonist from Chinese tarantula Ornithoctonus huwena.

    Science.gov (United States)

    Deng, Meichun; Luo, Xuan; Xiao, Yucheng; Sun, Zhenghua; Jiang, Liping; Liu, Zhonghua; Zeng, Xiongzhi; Chen, Hanchun; Tang, Jianhua; Zeng, Weimin; Songping Liang

    2014-04-01

    N-type calcium channels play important roles in the control of neurotransmission release and transmission of pain signals to the central nervous system. Their selective inhibitors are believed to be potential drugs for treating chronic pain. In this study, a novel neurotoxin named Huwentoxin-XVI (HWTX-XVI) specific for N-type calcium channels was purified and characterized from the venom of Chinese tarantula Ornithoctonus huwena. HWTX-XVI is composed of 39 amino acid residues including six cysteines that constitute three disulfide bridges. HWTX-XVI could almost completely block the twitch response of rat vas deferens to low-frequency electrical stimulation. Electrophysiological assay indicated that HWTX-XVI specifically inhibited N-type calcium channels in rat dorsal root ganglion cells (IC50 ∼60 nM). The inhibitory effect of HWTX-XVI on N-type calcium channel currents was dose-dependent and similar to that of CTx-GVIA and CTx-MVIIA. However, the three peptides exhibited markedly different degrees of reversibility after block. The toxin had no effect on voltage-gated T-type calcium channels, potassium channels or sodium channels. Intraperitoneal injection of the toxin HWTX-XVI to rats elicited significant analgesic responses to formalin-induced inflammation pain. Toxin treatment also changed withdrawal latency in hot plate tests. Intriguingly, we found that intramuscular injection of the toxin reduced mechanical allodynia induced by incisional injury in Von Frey test. Thus, our findings suggest that the analgesic potency of HWTX-XVI and its greater reversibility could contribute to the design of a novel potential analgesic agent with high potency and low side effects. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. N-type thermoelectric recycled carbon fibre sheet with electrochemically deposited Bi{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Pang, E.J.X. [Division of Materials, Mechanics and Structures, The University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Pickering, S.J., E-mail: stephen.pickering@nottingham.ac.uk [Division of Materials, Mechanics and Structures, The University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Chan, A. [Division of Materials, Mechanics and Structures, The University of Nottingham Malaysia Campus, Jalan Broga, 43500 Semenyih, Selangor Darul Ehsan (Malaysia); Wong, K.H. [Division of Materials, Mechanics and Structures, The University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Lau, P.L. [Division of Materials, Mechanics and Structures, The University of Nottingham Malaysia Campus, Jalan Broga, 43500 Semenyih, Selangor Darul Ehsan (Malaysia)

    2012-09-15

    An N-type thermoelectric recycled carbon fibre sheet with bismuth telluride coating has been successfully synthesised through an electro-deposition technique. The Seebeck coefficient and electrical properties of the combined recycled carbon fibre sheet and bismuth telluride films are reported. Classification of the crystal structure, surface morphology and the elemental composition of the resulting deposits are methodically characterised by XRD, SEM and EDX. Cyclic voltammetry is also carried out in nitric acid solutions to investigate the right range of deposition potential. The synthesis N-type thermoelectric sheet has a highest attainable Seebeck coefficient of -54 {mu}V K{sup -1} and an electrical resistivity of 8.9 Multiplication-Sign 10{sup -5} Ohm-Sign m. The results show slight differences in morphologies and thermoelectric properties for the films deposited at varying deposition potential. The increase in thermoelectrical properties of the recycled carbon fibre is in line with the development of using coated recycled fibre for thermoelectrical applications. - Graphical abstract: SEM image of an N-type thermoelectric recycled carbon fibre sheet with Bi{sub 2}Te{sub 3} coatings. Highlights: Black-Right-Pointing-Pointer N-type thermoelectric sheet is synthesis through the electrodeposition of Bi{sub 2}Te{sub 3}. Black-Right-Pointing-Pointer Bi{sub 2}Te{sub 3} composition can be controlled by varying the deposition voltage. Black-Right-Pointing-Pointer Seebeck coefficient and electrical properties of the combined sheet were reported. Black-Right-Pointing-Pointer Material characterisations of the deposits are done using XRD, SEM and EDX.

  11. Intrinsically High Thermoelectric Performance in AgInSe2 n-Type Diamond-Like Compounds.

    Science.gov (United States)

    Qiu, Pengfei; Qin, Yuting; Zhang, Qihao; Li, Ruoxi; Yang, Jiong; Song, Qingfeng; Tang, Yunshan; Bai, Shengqiang; Shi, Xun; Chen, Lidong

    2018-03-01

    Diamond-like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high-performance diamond-like thermoelectric materials are p-type semiconductors. The lack of high-performance n-type diamond-like thermoelectric materials greatly restricts the fabrication of diamond-like material-based modules and their real applications. In this work, it is revealed that n-type AgInSe 2 diamond-like compound has intrinsically high thermoelectric performance with a figure of merit ( zT ) of 1.1 at 900 K, comparable to the best p-type diamond-like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low-frequency Ag-Se "cluster vibrations," as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high-performance n-type AgInSe 2 -based compounds, the diamond-like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond-like thermoelectric materials.

  12. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Kwon, Sung-Joo; Han, Tae-Hee; Kim, Young-Hoon; Ahmed, Towfiq; Seo, Hong-Kyu; Kim, Hobeom; Kim, Dong Jin; Xu, Wentao; Hong, Byung Hee; Zhu, Jian-Xin; Lee, Tae-Woo

    2018-02-07

    n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

  13. Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

    CERN Document Server

    Casse, G L; Hanlon, M

    2000-01-01

    The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un- oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detec...

  14. Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution

    Science.gov (United States)

    Pinčík, Emil; Kobayashi, Hikaru; Matsumoto, Taketoshi; Takahashi, Masao; Mikula, Milan; Brunner, Róbert

    2014-05-01

    Electrical, optical and partly structural properties are investigated on very thin ALD HfO2/ultrathin NAOS SiO2/n-type Si structures. An ALD layer was deposited at 250 °C and it contains amorphous and crystalline-probably monoclinic HfO2 phases. HfO2 films with both types of structural phases were not stable if thermal treatment above 200 °C was applied. On as- prepared samples, deep interface traps with activation energy of ΔW = 0.23 eV have been determined. After annealing of the structure at 200 °C, the traps were partly transformed and a mid-gap level ΔW = 0.49 eV was detected. FTIR and AFM measurements confirmed presence of HfO2 monoclinic phase in the HfO2 films. On the other side, the density of interface defect states of the structure decreased from approx. 1012 eV-1 cm-2 to 1011 eV-1 cm-2 after low temperature annealing of the reference structure. The results are compared with very similar (almost identical) development of interface defect states on the very thin thermal SiO2/Si structure before and after passivation in a 0.1 M KCN methanol solution.PACS: 78.55.Qr; 78.66.Jg; 81.16.Pr; 85.40Ls

  15. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  16. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  17. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-06-03

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  18. In situ UHVEM study of {113}-defect formation in Si nanowires

    Science.gov (United States)

    Vanhellemont, Jan; Anada, Satoshi; Yasuda, Hidehiro; Van Marcke, Patricia; Bender, Hugo; Rooyackers, Rita; Vandooren, Anne

    2015-11-01

    Results are presented of a study of {113}-defect formation in vertical Si nanowire n-type tunnel field effect transistors with nanowire diameters ranging from 40 to 500 nm. The nanowires are etched into an epitaxial moderately As doped n-type layer grown on a heavily As doped {{{n}}}+ Si substrate. p+ contacts on the nanowire are created by epitaxial growth of a heavily B doped layer. Using focused ion beam cutting, samples for irradiation are prepared with different thicknesses so that the nanowires are fully or partially embedded in the sample thickness. {113}-defects are created in situ by 2 MeV e-irradiation in an ultra-high voltage electron microscope between room temperature and 375 °C. The observations are discussed in the frame of intrinsic point defect properties, taking into account the role of dopants and capping layers. The important impact of the specimen thickness is elucidated.

  19. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  20. Kapitza resistance of Si/SiO2 interface

    Energy Technology Data Exchange (ETDEWEB)

    Bowen Deng; Aleksandr Chenatynskiy; Marat Khafizov; David Hurley; Simon Phillpot

    2014-02-01

    A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

  1. Molecule-induced interface states dominate charge transport in Si-alkyl-metal junctions.

    Science.gov (United States)

    Yu, Lam H; Gergel-Hackett, Nadine; Zangmeister, Christopher D; Hacker, Christina A; Richter, Curt A; Kushmerick, James G

    2008-09-17

    Semiconductor-molecule-metal junctions consisting of alkanethiol monolayers self-assembled on both p(+) and n(-) type highly doped Si(111) wires contacted with a 10 µm Au wire in a crossed-wire geometry are examined. Low temperature transport measurements reveal that molecule-induced semiconductor interface states control charge transport across these systems. Inelastic electron tunneling spectroscopy also highlights the strong contribution of the induced interface states to the observed charge transport.

  2. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  3. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  4. Ru Schottky barrier contacts to n- and p-type 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Samiji, M.E.; Wyk, E. van; Wu, L.; Leitch, A.W.R. [Port Elizabeth Univ. (South Africa). Dept. of Physics; Venter, A. [Vista Univ., Port Elizabeth (South Africa). Dept. of Physics

    2001-07-01

    We have investigated the formation of ruthenium Schottky contacts on both n- and p-type 6H-SiC wafers. It is found that Ru forms good quality rectifying contacts, with barrier heights of 0.67 eV and 1.06 eV for n-type and p-type SiC, respectively and ideality factors in the range 1.4 - 1.6. Annealing experiments indicated that the Ru Schottky contacts remained stable up to 450 C, above which a general deterioration in the quality of the contacts (as indicated by an increase in the measured idealities as well as an increase in the reverse bias leakage currents) was observed. It is also shown that the Ru Schottky contact to p-type SiC provides an excellent means through which to introduce hydrogen into the SiC using a hydrogen plasma. (orig.)

  5. Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si

    CERN Document Server

    Silva, Daniel José; Correia, João Guilherme; Araújo, João Pedro

    2013-01-01

    We report on the lattice location of implanted $^{59}$Fe in n$^{+}$ and p$^{+}$ type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n$^{+}$ type Si Fe prefers displaced bond-centered (BC) sites for annealing temperatures up to 600°C, changing to ideal substitutional sites above 700°C, in p$^{+}$ type Si, Fe prefers to be in displaced tetrahedral interstitial positions after all annealing steps. The dominant lattice sites of Fe in n$^{+}$ type Si therefore seem to be well characterized for all annealing temperatures by the incorporation of Fe into vacancy-related complexes, either into single vacancies which leads to Fe on ideal substitutional sites, or multiple vacancies, which leads to its incorporation near BC sites. In contrast, in p$^{+}$ type Si, the major fraction of Fe is clearly interstitial (near-T or ideal T) for all annealing temperatures. The formation and possible lattice sites of Fe in FeB...

  6. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

    Science.gov (United States)

    Wang, Yucheng; Jia, Renxu; Zhao, Yanli; Li, Chengzhan; Zhang, Yuming

    2016-11-01

    In this study, the material and electrical properties of La2O3/SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are systematically characterized. Thermal oxidization SiO2 with varying thickness (0 nm, 3.36 nm, 5 nm, 8 nm, and 30 nm) were coated with La2O3 using atomic layer deposition on n-type 4H-SiC. The stacking oxides were measured using atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, and the MOS capacitors were measured by capacitance-voltage and current-voltage measurements. The results demonstrate that the main gate current leakage mechanisms are dependent on the thickness of the SiO2 oxide under the applied electric field. The primary mechanism for current leakage from the La2O3/4H-SiC MOS capacitor follows the Schottky emission mechanism due to its low conduction band offset. In contrast, the current leakage mechanism for the capacitor with a 3.36 nm SiO2 layer follows the Poole-Frenkel emission mechanism on account of its high trap charge density in the gate dielectric and at the interface. When the thickness of the SiO2 layer increases to 8 nm, lower leakage current is observed by reason of the low trap charge density and high conduction band offset when E ≤ 5 MV/cm. As the electric field strength increases to 5 MV/cm and 5.88 MV/cm (30 nm SiO2: 4.8 MV/cm), the main current leakage mechanism changes to the Fowler-Nordheim tunneling mechanism, which indicates that the La2O3/SiO2 stacking structure can improve the properties of MOS capacitors.

  7. Naphthalene Diimide Based n-Type Conjugated Polymers as Efficient Cathode Interfacial Materials for Polymer and Perovskite Solar Cells.

    Science.gov (United States)

    Jia, Tao; Sun, Chen; Xu, Rongguo; Chen, Zhiming; Yin, Qingwu; Jin, Yaocheng; Yip, Hin-Lap; Huang, Fei; Cao, Yong

    2017-10-18

    A series of naphthalene diimide (NDI) based n-type conjugated polymers with amino-functionalized side groups and backbones were synthesized and used as cathode interlayers (CILs) in polymer and perovskite solar cells. Because of controllable amine side groups, all the resulting polymers exhibited distinct electronic properties such as oxidation potential of side chains, charge carrier mobilities, self-doping behaviors, and interfacial dipoles. The influences of the chemical variation of amine groups on the cathode interfacial effects were further investigated in both polymer and perovskite solar cells. We found that the decreased electron-donating property and enhanced steric hindrance of amine side groups substantially weaken the capacities of altering the work function of the cathode and trap passivation of the perovskite film, which induced ineffective interfacial modifications and declining device performance. Moreover, with further improvement of the backbone design through the incorporation of a rigid acetylene spacer, the resulting polymers substantially exhibited an enhanced electron-transporting property. Upon use as CILs, high power conversion efficiencies (PCEs) of 10.1% and 15.2% were, respectively, achieved in polymer and perovskite solar cells. Importantly, these newly developed n-type polymers were allowed to be processed over a broad thickness range of CILs in photovoltaic devices, and a prominent PCE of over 8% for polymer solar cells and 13.5% for perovskite solar cells can be achieved with the thick interlayers over 100 nm, which is beneficial for roll-to-roll coating processes. Our findings contribute toward a better understanding of the structure-performance relationship between CIL material design and solar cell performance, and provide important insights and guidelines for the design of high-performance n-type CIL materials for organic and perovskite optoelectronic devices.

  8. Stable respiratory activity requires both P/Q-type and N-type voltage-gated calcium channels.

    Science.gov (United States)

    Koch, Henner; Zanella, Sebastien; Elsen, Gina E; Smith, Lincoln; Doi, Atsushi; Garcia, Alfredo J; Wei, Aguan D; Xun, Randy; Kirsch, Sarah; Gomez, Christopher M; Hevner, Robert F; Ramirez, Jan-Marino

    2013-02-20

    P/Q-type voltage-gated calcium channels (Ca(v)2.1) play critical presynaptic and postsynaptic roles throughout the nervous system and have been implicated in a variety of neurological disorders. Here we report that mice with a genetic ablation of the Ca(v)2.1 pore-forming α(1A) subunit (α(1A)⁻/⁻) encoded by CACNA1a (Jun et al., 1999) suffer during postnatal development from increasing breathing disturbances that lead ultimately to death. Breathing abnormalities include decreased minute ventilation and a specific loss of sighs, which was associated with lung atelectasis. Similar respiratory alterations were preserved in the isolated in vitro brainstem slice preparation containing the pre-Bötzinger complex. The loss of Ca(v)2.1 was associated with an alteration in the functional dependency on N-type calcium channels (Ca(v)2.2). Blocking N-type calcium channels with conotoxin GVIA had only minor effects on respiratory activity in slices from control (CT) littermates, but abolished respiratory activity in all slices from α(1A)⁻/⁻ mice. The amplitude of evoked EPSPs was smaller in inspiratory neurons from α(1A)⁻/⁻ mice compared with CTs. Conotoxin GVIA abolished all EPSPs in inspiratory neurons from α(1A)⁻/⁻ mice, while the EPSP amplitude was reduced by only 30% in CT mice. Moreover, neuromodulation was significantly altered as muscarine abolished respiratory network activity in α(1A)⁻/⁻ mice but not in CT mice. We conclude that excitatory synaptic transmission dependent on N-type and P/Q-type calcium channels is required for stable breathing and sighing. In the absence of P/Q-type calcium channels, breathing, sighing, and neuromodulation are severely compromised, leading to early mortality.

  9. Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions

    KAUST Repository

    Pintossi, Chiara

    2013-09-12

    An angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.

  10. Noticeable positive Doppler effect on optical bistability in an N-type active Raman gain atomic system

    International Nuclear Information System (INIS)

    Chang Zeng-Guang; Zhang Jing-Tao; Niu Yue-Ping; Gong Shang-Qing

    2012-01-01

    We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion and thus create the bistable behaviour or greatly increase the bistable region, which has been known as the positive Doppler effect on optical bistability. In addition, we find that a positive Doppler effect can change optical bistability from the hybrid dispersion-gain type to a dispersive type

  11. Unconventional Face-On Texture and Exceptional In-Plane Order of a High Mobility n-Type Polymer

    KAUST Repository

    Rivnay, Jonathan

    2010-07-09

    Substantial in-plane crystallinity and dominant face-on stacking are observed in thin films of a high-mobility n-type rylene-thiophene copolymer. Spun films of the polymer, previously thought to have little or no order are found to exhibit an ordered microstructure at both interfaces, and in the bulk. The implications of this type of packing and crystalline morphology are discussed as they relate to thin-film transistors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

    International Nuclear Information System (INIS)

    Yoo, D.; Limb, J.; Ryou, J.-H.; Lee, W.; Dupuis, R.D.

    2006-01-01

    The development of a full-vertical GaN p-i-n rectifier on a 6H n-type SiC substrate by employing a conducting Al x Ga 1-x N:Si (x=∼0.1) buffer layer scheme is reported. In this vertical configuration, the n contact is made on the backside of the SiC substrate using a Ni/Au metallization scheme. Epitaxial layers are grown by low-pressure metal organic chemical vapor deposition. The Al x Ga 1-x N:Si nucleation layer is proven to provide excellent electrical properties while also acting as a good buffer layer for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm thick i region was found to be over -330 V. The devices also show a low on resistance of R on of 7.5x10 -3 Ω cm 2 . This full-vertical configuration provides the advantage of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding in the bottom n-type layer

  13. Nanostructured CoSi Obtained by Spark Plasma Sintering

    Science.gov (United States)

    Longhin, Marco; Viennois, Romain; Ravot, Didier; Robin, Jean-Jacques; Villeroy, Benjamin; Vaney, Jean-Baptiste; Candolfi, Christophe; Lenoir, Bertrand; Papet, Philippe

    2015-06-01

    Cobalt monosilicide is a cheap, environmentally friendly thermoelectric material for medium temperatures (200-700°C). While its power factor is similar to the state-of-the-art thermoelectric materials, its thermal conductivity is too large to reach high ZT values. Nanostructuring might be an interesting strategy to reduce the phonon mean free path thereby improving the thermoelectric performance. In this paper, we report on a 35% reduction of the thermal conductivity of n-type CoSi by a nanostructuring approach. CoSi nanostructured powders were synthesized by arc melting, followed by 4° h mechanical milling. By optimizing the spark plasma sintering thermal and pressure cycle, pellets with 5â€"10% porosity were obtained. During sintering, a small amount of Co2Si extra phase appeared and grains coarsened. After sintering, the pellets remained nanostructured, with an averaged grain size of 70 nm. The reduction of thermal conductivity is ascribed to a decrease in both the electronic and lattice contributions. The former is directly related to a decrease in the electrical conductivity, which appears to be the limiting factor preventing nanostructured CoSi from reaching enhanced thermoelectric performances.

  14. Enhanced Photodegradation Activity of Hydrogen-Terminated Si Nanowires Arrays with Different-Oriented Crystal Phases

    Directory of Open Access Journals (Sweden)

    Longfei Song

    2017-12-01

    Full Text Available Although Si nanowires (NWs arrays are superior candidates for visible light photocatalysis, reports about the photodegradation activity of various crystal-orientated Si NWs are still insufficient. Here, light-doped hydrogen-terminated Si NWs arrays with different crystal orientations were prepared via a metal-assisted chemical etching method (MACE, which simply modulated the concentration of the oxidizer, H2O2. Their dye photodegradation activities were systematically and comprehensively investigated. When compared with Si NWs arrays with crystal orientations of (110 and (111, Si NWs arrays with (100 crystal orientation exhibit a superior photodegradation activity and stability due to the anisotropy of optical and physical properties. The n-type Si NWs arrays exhibit better photodegradation activity than the p-type Si NWs arrays of the same crystal orientation and similar length. The results provide a further understanding of the synthesis of Si NWs arrays with various orientations, and the relationships between photodegradation activity/stability and crystal orientations.

  15. Endotaxial Si nanolines in Si(001):H

    Science.gov (United States)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  16. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  17. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  18. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  19. Funneling effect of alpha particles on the charge collection efficiency in N type silicon surface barrier detector

    International Nuclear Information System (INIS)

    Boorboor, S.; Feghhi, S.A.H.; Jafari, H.

    2014-01-01

    Highlights: • Field funneling due to SEE in microelectronic device affects the charge collection efficiency. • Charge collection efficiency from alpha particles in a N type SSB device was calculated. • GEANT4, a Monte Carlo code and ATLAS, a numerical code have been used. • The simulation results have been validated through comparison with the experimental results. - Abstract: There are three different mechanisms of charge collection in a semiconductor charge particle detector, such as the drift of carriers in depletion zone, the drift of carriers in an extended electrical field along the ion track or funneling effect and the diffusion of carriers. In this work, the funneling effect on charge collection efficiency due to alpha particle track in a N type silicon surface barrier detector has been investigated. GEANT4, as Monte Carlo code, has been used for estimation of the deposit energy distribution in the component. In addition, the semiconductor device simulator, ATLAS, has been used in calculation of charge collection efficiency. The simulation results have been validated through comparison with the available experimental results. The calculated charge collection efficiency has good agreement with experiment. Without considering the funneling effect and diffusion, the calculation results underestimate the charge collection efficiency within 60%. Our overall results were indicative of the fact that considering funneling effect, considerably improves the accuracy of the charge collection efficiency estimation

  20. Controlling the optical bistability via quantum interference in a four-level N-type atomic system

    International Nuclear Information System (INIS)

    Sahrai, M.; Asadpour, S.H.; Mahrami, H.; Sadighi-Bonabi, R.

    2011-01-01

    We investigate the optical bistability (OB) and optical multi-stability (OM) in a four-level N-type atomic system. The effect of spontaneously generated coherence (SGC) on OB and OM is then discussed. It is found that SGC makes the medium phase dependent, so the optical bistability and multi-stability threshold can be controlled via relative phase between applied fields. We realize that the frequency detuning of probe and coupling fields with the corresponding atomic transition plays an important role in creation OB and OM. Moreover, the effect of laser coupling fields and an incoherent pumping field on reduction of OB and OM threshold is then discussed. - Highlights: → We modulate the optical bistability (OB) in a four-level N-type atomic system. The effect of spontaneously generated coherence on OB is discussed. → Spontaneously generated coherence makes the medium phase dependent. → The frequency of coupling field can reduce OB threshold. → We discuss the effect of an incoherent pumping field on reduction of OB threshold.

  1. Cyclopentadithiophene–naphthalenediimide polymers; synthesis, characterisation, and n-type semiconducting properties in field-effect transistors and photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chun-Han [Department of Chemical Engineering, Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, 101, Sec. 2, Kuang-Fu Road, Hsin-Chu 30013, Taiwan (China); Kettle, Jeff [School of Electronics, Bangor University, Dean st., Bangor, Gwynedd, LL57 1UT Wales (United Kingdom); Horie, Masaki, E-mail: mhorie@mx.nthu.edu.tw [Department of Chemical Engineering, Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, 101, Sec. 2, Kuang-Fu Road, Hsin-Chu 30013, Taiwan (China)

    2014-04-01

    The synthesis, characterisation, and device performance of a series of cyclopentadithiophene (CPDT)-naphthalenediimide (NDI) donor-acceptor-donor (D-A-D) polymers is reported. The monomers with various alkyl chains are synthesised via direct arylation using palladium complex catalyst. The monomers are then polymerised by oxidative polymerisation using FeCl{sub 3} to provide high molecular weight polymers (M{sub n} = 21,800–76,000). The polymer films show deep-red absorption including near-infrared region up to 1100 nm to give optical bandgap of approximately 1.16 eV. The polymers exhibit only n-type semiconducting properties giving the highest electron mobility of 9 × 10{sup -3} cm{sup 2} V{sup −1} s{sup −1} in organic field-effect transistors (OFETs). Organic photovoltaic (OPV) devices are fabricated from solutions of the polymers as acceptors and poly(3-hexylthiophene) (P3HT) as a donor. - Highlights: • Cyclopentadithiophene–naphthalenediimide oligomers were prepared by direct arylation. • The oligomers were polymerised by oxidative reaction using iron(III)chloride. • The polymer films show deep-red absorption up to 1100 nm with a bandgap of 1.1 eV. • The polymers exhibit only n-type semiconducting properties in OFETs and OPVs.

  2. Clinical features of neuromuscular disorders in patients with N-type voltage-gated calcium channel antibodies

    Directory of Open Access Journals (Sweden)

    Andreas Totzeck

    2016-09-01

    Full Text Available Neuromuscular junction disorders affect the pre- or postsynaptic nerve to muscle transmission due to autoimmune antibodies. Members of the group like myasthenia gravis and Lambert-Eaton syndrome have pathophysiologically distinct characteristics. However, in practice, distinction may be difficult. We present a series of three patients with a myasthenic syndrome, dropped-head syndrome, bulbar and respiratory muscle weakness and positive testing for anti-N-type voltage-gated calcium channel antibodies. In two cases anti-acetylcholin receptor antibodies were elevated, anti-P/Q-type voltage-gated calcium channel antibodies were negative. All patients initially responded to pyridostigmine with a non-response in the course of the disease. While one patient recovered well after treatment with intravenous immunoglobulins, 3,4-diaminopyridine, steroids and later on immunosuppression with mycophenolate mofetil, a second died after restriction of treatment due to unfavorable cancer diagnosis, the third patient declined treatment. Although new antibodies causing neuromuscular disorders were discovered, clinical distinction has not yet been made. Our patients showed features of pre- and postsynaptic myasthenic syndrome as well as severe dropped-head syndrome and bulbar and axial muscle weakness, but only anti-N-type voltage-gated calcium channel antibodies were positive. When administered, one patient benefited from 3,4-diaminopyridine. We suggest that this overlap-syndrome should be considered especially in patients with assumed seronegative myasthenia gravis and lack of improvement under standard therapy.

  3. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

    2015-01-01

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  4. Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

    KAUST Repository

    Baker, L. Robert

    2011-08-18

    The role of the oxide-metal interface in determining the activity and selectivity of chemical reactions catalyzed by metal particles on an oxide support is an important topic in science and industry. A proposed mechanism for this strong metal-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report an approximately 2-fold increase in the turnover rate of catalytic carbon monoxide oxidation on platinum nanoparticles supported on stoichiometric titanium dioxide (TiO2) when the TiO2 is made highly n-type by fluorine (F) doping. However, for nonstoichiometric titanium oxide (TiOX<2) the effect of F on the turnover rate is negligible. Studies of the titanium oxide electronic structure show that the energy of free electrons in the oxide determines the rate of reaction. These results suggest that highly n-type TiO2 electronically activates adsorbed oxygen (O) by electron spillover to form an active O- intermediate. © 2011 American Chemical Society.

  5. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S-Sm inte...

  6. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  7. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  8. Si nanoparticle interfaces in Si/SiO solar cell materials

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Kujala, J.; Tuomisto, F.

    2013-01-01

    Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One...... of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from...... the samples following this annealing step....

  9. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  10. Photoluminescence from SiO sub 2 /Si/SiO sub 2 structures

    CERN Document Server

    Photopoulos, P

    2003-01-01

    Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 deg C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO sub 2 /Si/SiO sub 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than approx 6 nm, the spectra exhibited a peak at approx 650 nm. Prolonged oxidations led to the formation of SiO sub 2 /nanocrystalline-Si/SiO sub 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-...

  11. Conserved N-terminal negative charges support optimally efficient N-type inactivation of Kv1 channels.

    Directory of Open Access Journals (Sweden)

    Alison Prince

    Full Text Available N-type inactivation is produced by the binding of a potassium channel's N-terminus within the open pore, blocking conductance. Previous studies have found that introduction of negative charges into N-terminal inactivation domains disrupts inactivation; however, the Aplysia AKv1 N-type inactivation domain contains two negatively charged residues, E2 and E9. Rather than being unusual, sequence analysis shows that this N-terminal motif is highly conserved among Kv1 sequences across many phyla. Conservation analysis shows some tolerance at position 9 for other charged residues, like D9 and K9, whereas position 2 is highly conserved as E2. To examine the functional importance of these residues, site directed mutagenesis was performed and effects on inactivation were recorded by two electrode voltage clamp in Xenopus oocytes. We find that inclusion of charged residues at positions 2 and 9 prevents interactions with non-polar sites along the inactivation pathway increasing the efficiency of pore block. In addition, E2 appears to have additional specific electrostatic interactions that stabilize the inactivated state likely explaining its high level of conservation. One possible explanation for E2's unique importance, consistent with our data, is that E2 interacts electrostatically with a positive charge on the N-terminal amino group to stabilize the inactivation domain at the block site deep within the pore. Simple electrostatic modeling suggests that due to the non-polar environment in the pore in the blocked state, even a 1 Å larger separation between these charges, produced by the E2D substitution, would be sufficient to explain the 65× reduced affinity of the E2D N-terminus for the pore. Finally, our studies support a multi-step, multi-site N-type inactivation model where the N-terminus interacts deep within the pore in an extended like structure placing the most N-terminal residues 35% of the way across the electric field in the pore blocked

  12. Characterization of Si nanocrystals into SiO2 matrix

    International Nuclear Information System (INIS)

    Gravalidis, C.; Logothetidis, S.; Hatziaras, N.; Laskarakis, A.; Tsiaoussis, I.; Frangis, N.

    2006-01-01

    Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO 2 matrix from SiO/SiO 2 multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO 2 materials and annealing at temperatures up to 1100 deg. C in N 2 atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO 2 matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100 deg. C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO 2 matrix under N 2 atmosphere

  13. Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

    Science.gov (United States)

    Jäckle, Sara; Mattiza, Matthias; Liebhaber, Martin; Brönstrup, Gerald; Rommel, Mathias; Lips, Klaus; Christiansen, Silke

    2015-08-01

    We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

  14. Simple approach for the fabrication of PEDOT-coated Si nanowires

    Directory of Open Access Journals (Sweden)

    Mingxuan Zhu

    2015-03-01

    Full Text Available The synthesis of a conformal poly(3,4-ethylenedioxythiophene (PEDOT layer on Si nanowires was demonstrated using a pulsed electrodeposition technique. N-type Si nanowire (SiNWs arrays were synthesized using an electroless metal-assisted chemical etching technique. The dependence of the SiNW reflection on the concentration of the AgNO3 solution was identified. A reflection of less than 2% over the entire visible spectral range was obtained for these structures, evidencing their excellent antireflective properties. The etched SiNWs nanostructures can be further modified by using a tapering technique, which further preserves the strong light trapping effect. P-type PEDOT was grown on these SiNWs using electrochemical methods. Since the polymerization reaction is a very fast process with regards to monomer diffusion along the SiNW, the conformal deposition by classical, fixed potential deposition was not favored. Instead, the core–shell heterojunction structure was finally achieved by a pulsed deposition method. An extremely large shunt resistance was exhibited and determined to be related to the diffusion conditions occurring during polymerization.

  15. Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

    CERN Document Server

    Ramirez-Porras, A

    1997-01-01

    A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author)

  16. Application of the new LDA+GTB method for the band structure calculation of n-type cuprates

    International Nuclear Information System (INIS)

    Korshunov, M.M.; Ovchinnikov, S.G.; Gavrichkov, V.A.; Nekrasov, I.A.; Pchelkina, Z.V.; Anisimov, V.I.

    2006-01-01

    A novel hybrid scheme is proposed and applied for band structure calculations of undoped n-type cuprate Nd 2 CuO 4 . The ab initio LDA calculation is used to obtain single electron and Coulomb parameters of the multiband Hubbard-type model. In strong correlation regime the electronic structure within this model is calculated by the generalized tight-binding (GTB) method, that combines the exact diagonalization of the model Hamiltonian for a small cluster with perturbation treatment of the intercluster hopping and interactions. For Nd 2 CuO 4 , this scheme results in charge transfer insulator with value of the gap and band dispersion in agreement to the experimental data

  17. Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

    International Nuclear Information System (INIS)

    Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

    2006-01-01

    Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

  18. Effects of thermal budget in n-type bifacial solar cell fabrication processes on effective lifetime of crystalline silicon

    Directory of Open Access Journals (Sweden)

    Tomihisa Tachibana

    2017-04-01

    Full Text Available The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied Voc obtained from wafers with same Oi concentration depend on the thermal budgets decreases as the Cs concentration increases. The Voc values vary depending on the wafer with different growth cooling rate. To analyze the effect of thermal budget correspond to solar cell fabrication process, CZ wafers with almost the same Oi concentrations are prepared. One of the wafers with relatively high residual Cs concentration shows the longer lifetime than the initial value after the 950 oC annealing step. On the other hand, the lifetime of a wafer with relatively low Cs concentration dramatically decreased by the same process due to the O segregation. These results suggest that it is important to choose appropriate wafer specification, starting with feedstock material, for increasing the solar cell efficiency.

  19. Superluminal propagation in a poly-chromatically driven gain assisted four-level N-type atomic system

    International Nuclear Information System (INIS)

    Bacha, Bakht Amin; Ahmad, Iftikhar; Ullah, Arif; Ali, Hazrat

    2013-01-01

    We investigate the behavior of light propagation in an N-type four-level gain assisted model (Agarwal and Dasgupta 2004 Phys. Rev. A 70 023802) under poly-chromatic pump fields. The system exhibits interesting results of multiple controllable pairs of the gain doublet profile with changes in the intensity of the control field. We observe multiple anomalous dispersive regions for superluminal propagation in the medium. A negative group velocity of −37.50 m s −1 with a negative time delay of −8 ms is observed between each gain doublet in anomalous dispersive regions. This generalized model and its predictions can be tested with existing experimental setups. (paper)

  20. Comparative study of long alkyl chain substituted naphthalene diimide derivatives as n-type organic thin-film transistor materials

    Science.gov (United States)

    Ichikawa, Musubu; Iwasaki, Kazuaki; Ohyama, Atsuro; Miyazawa, Jun; Yokota, Yoichiro; Hirata, Naoki; Oguma, Naomi

    2017-11-01

    In this study, vacuum-evaporated thin films of several naphthalene tetracarboxylic acid diimide derivatives substituted at the N and N‧ positions with long normal alkyl chains of varying lengths (NTCDI-Cn) were evaluated as active materials for n-type organic thin-film transistors (TFTs). The electron mobility (μe) of the TFTs increased with increasing chain length from octyl (NTCDI-C8) to pentadecyl (NTCDI-C15); those of NTCDI-C15 and C18 TFTs were of 0.262 ± 0.016 and 0.222 ± 0.016 cm2 V-1 s-1, respectively. However, the threshold voltage of the TFTs increased with increasing chain length.

  1. Staircase and saw-tooth field emission steps from nanopatterned n-type GaSb surfaces

    CERN Document Server

    Kildemo, M.; Le Roy, S.; Søndergård, E.

    2009-01-01

    High resolution field emission experiments from nanopatterned GaSb surfaces consisting of densely packed nanocones prepared by low ion-beam-energy sputtering are presented. Both uncovered and metal-covered nanopatterned surfaces were studied. Surprisingly, the field emission takes place by regular steps in the field emitted current. Depending on the field, the steps are either regular, flat, plateaus, or saw-tooth shaped. To the author’s knowledge, this is the first time that such results have been reported. Each discrete jump in the field emission may be understood in terms of resonant tunneling through an extended surface space charge region in an n-type, high aspect ratio, single GaSb nanocone. The staircase shape may be understood from the spatial distribution of the aspect ratio of the cones.

  2. High-frequency oscillations in an alpha-Si/Si(p)/Si(n) device

    CERN Document Server

    Dorosinets, V A; Roskos, H; Kyritsi, K; Anagnostopoulos, A N; Bleris, G L

    2003-01-01

    An alpha-Si/Si(p)/Si(n) heterojunction transistor exhibits current oscillations, which depending on the applied base-emitter voltage are either periodic or chaotic. The frequency dependence of the oscillations on the collector-emitter and the base-emitter voltage as well as on the load resistance, are presented.

  3. Growth of amorphous and epitaxial ZnSiP2Si alloys on Si

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Aaron D. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Miller, Elisa M. [National Renewable Energy Laboratory; Golden; USA; Norman, Andrew G. [National Renewable Energy Laboratory; Golden; USA; Schnepf, Rekha R. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Leick, Noemi [National Renewable Energy Laboratory; Golden; USA; Perkins, Craig [National Renewable Energy Laboratory; Golden; USA; Stradins, Paul [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Toberer, Eric S. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Tamboli, Adele C. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines

    2018-01-01

    ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

  4. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  5. GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

    Science.gov (United States)

    Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

    2017-07-01

    We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.

  6. Prospects of a {beta}-SiC based IMPATT oscillator for application in THz communication and growth of a {beta}-SiC p-n junction on a Ge modified Si (100) substrate to realize THz IMPATTs

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Moumita [Centre of Millimeter-Wave Semiconductor Devices and Systems, Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta, Girish Vidyaratna Lane, Kolkata 700009, West Bengal (India); Mazumder, Nilratan, E-mail: mm_drdo@yahoo.com [IERCEM Institute of Information Technology, West Bengal University of Technology, Kolkata 700017 (India)

    2010-12-15

    The prospects of a p{sup +}nn{sup +} cubic silicon carbide (3C-SiC/{beta}-SiC) based IMPATT diode as a potential solid-state terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate {beta}-SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) (100) substrates by rapid thermal chemical vapour deposition (RTPCVD) at a temperature as low as 800 {sup 0}C using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with an n-type doping concentration of 4 x 10{sup 24} m{sup -3} (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness. (semiconductor devices)

  7. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  8. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  9. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  10. Formation of bismuth oxide nanowires by simultaneous templating and electrochemical adhesion of DNA on Si/SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hale, Michael G. [School of Chemistry, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Little, Ross; Salem, Mohamed Ali [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Hedley, Joseph H.; Horrocks, Benjamin R. [School of Chemistry, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Siller, Lidija, E-mail: Lidija.Siller@ncl.ac.uk [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

    2012-10-01

    Deoxyribonucleic acid (DNA)-templated growth of Bi/Bi{sub 2}O{sub 3} nanowires attached to the Si surface was obtained by electrochemical reduction of Bi(III) at an n-type Si electrode in aqueous Bi(NO{sub 3}){sub 3}/HNO{sub 3} at pH 2.5 with calf thymus DNA. The nanowires had a mean diameter of 5 nm and a range of lengths from 1.4 {mu}m to 6.1 {mu}m. The composition and structure of the wires were determined by atomic force microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray photoemission spectroscopy. The dominant component of the material is Bi{sub 2}O{sub 3} owing to the rapid re-oxidation of nanoscale Bi in the presence of air and water. Our method has the potential to construct complex architectures of Bi/Bi{sub 2}O{sub 3} nanostrucures on high quality Si substrates. - Highlights: Black-Right-Pointing-Pointer We have developed an electrochemical method to grow Bi/Bi{sub 2}O{sub 3} nanowires on silicon. Black-Right-Pointing-Pointer Bi/Bi{sub 2}O{sub 3} nanowires are templated by deoxyribonucleic acid molecules. Black-Right-Pointing-Pointer The procedure also adheres the nanowires to the electrode for characterization.

  11. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    Science.gov (United States)

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  12. CORRIGENDUM: The mechanism of defect creation and passivation at the SiC/SiO2 interface

    Science.gov (United States)

    Deák, Peter; Knaup, Jan; Thill, Christoph; Frauenheim, Thomas; Hornos, Tamás; Gali, Adam

    2008-02-01

    In a recent rewiew article we have reported—among other things—on preliminary computational studies regarding the effect of nitridation on the SiC/SiO2 interface, in case of n-type doping. We have since discovered a few numerical errors in the paper, which also influence some of our statements. Here we present the correct results and their consequences. 1. Introduction In our review we reported energies of reactions occurring at the SiC/SiO2 interface upon nitridation. Our computational approach was to calculate the energy of incoming and outgoing molecules in a bulk supercell of SiO2, and that of interface defects before or after the reaction in a slab model of the 4H-SiC/SiO2 interface. Incoming molecules in bulk SiO2 were assumed to be neutral, but the interface was coupled to a reservoir of electrons with energy corresponding to the Fermi level of the semiconductor. The latter was determined by the temperature of nitridation (~1100 °C) and the usual doping of the channel region (1015-1016 cm-3) of a MOS (metal-oxide-semiconductor) transistor with an n-type channel, to be 1.9-2.2 eV, with respect to the valence band edge of SiC. Using the calculated total energies, energies of exchange reactions between the models have been calculated, adding a band off-set correction for each electron transfer between the models (to account for the error introduced by using the pseudopotential approximation in two different models). Unfortunately, some of the results were erroneously given. Here we present the correct values, and briefly state the consequences. 2. Corrected results (A) The energy gain on reaction (1) of the original paper is equal to 3EF - 2.7 eV, which gives 3.0-3.9 eV in the Fermi-energy range considered (not, as erroneously reported 1.0-1.3 eV). As a consequence, this reaction is, in fact, dominating over reaction (2) of the original paper with an energy gain of EF + 0.7 eV, i.e., 2.6-2.9 eV in the chosen Fermi-level range. Therefore, nitrogen insertion

  13. Nitride Conversion: A Novel Approach to c-Si Solar Cell Metallization

    Science.gov (United States)

    Hook, David Henry

    Metallization of commercial-grade c-Si solar cells is currently accomplished by screen-printing fine lines of a Ag/PbO-glass paste amalgam (Ag-frit) onto the insulating SiNx antireflective coating (ARC) that lies atop the shallow n-type emitter layer of the cell. Upon annealing, the glass etches SiNx and permits the crystallization of Ag near the electrically-active emitter interface, thus contacting the cell. While entirely functional, the contact interface produced by Ag-frit metallization is non-ideal, and Ag metal itself is expensive; its use adds to overall solar cell costs. The following work explores the use of Ti-containing alloys as metallization media for c-Si solar cells. There is a -176 kJ [mol N]--1 free energy change associated with the conversion of Si3N4 to TiN. By combining Ti with a low-melting point metal, this reaction can take place at temperatures as low as 750°C in the bulk. Combinations of Ti with Cu, Sn, Ag, and Pb ternary and binary systems are investigated. On unmetallized, c-Si textured solar cells it is shown that 900 nm of stoichiometric Ti6Sn 5 is capable of converting the SiNx ARC to TiN and Ti5Si3, both of which are conducting materials with electrically low-barriers to contact with n-type Si. Alongside electron microscopy, specific contact resistivity (rho c) measurements are used to determine the interfacial quality of TiN/Ti5Si3 contacts to n-Si. Circular transmission line model (CTLM) measurements are utilized for the characterization of reacted Ag0.05Cu0.69Ti0.26, Sn0.35 Ag0.27Ti0.38, and Ti6Sn5 contacts. rhoc values as low as 26 muOcm 2 are measured for reacted Ti6Sn5-SiN x on conventional c-Si solar cells. This value is approximately 2-3 orders of magnitude lower than rhoc of contacts produced by traditional Ag-frit metallization. Viable 1x1 cm, Ti6Sn5-metallized solar cells on 5x5 cm substrates were fabricated through a collaboration with the Georgia Institute of Technology (GA Tech). Front-side metallization was performed

  14. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

    Science.gov (United States)

    Müller, St. G.; Sanchez, E. K.; Hansen, D. M.; Drachev, R. D.; Chung, G.; Thomas, B.; Zhang, J.; Loboda, M. J.; Dudley, M.; Wang, H.; Wu, F.; Byrappa, S.; Raghothamachar, B.; Choi, G.

    2012-08-01

    We review the progress of silicon carbide (SiC) bulk growth by the sublimation method, highlighting recent advances at Dow Corning, which resulted in the commercial release of 100 mm n-type 4H-SiC wafers with median micropipe densities (MPD) in production wafers etch pit analysis of 100 mm wafers demonstrate threading screw dislocation densities RMS) ≤1 nm as measured by atomic force microscopy (AFM), and carrier lifetimes consistently in the range of 2-3 μs has been demonstrated.

  15. 3C-SiC nanocrystals/TiO{sub 2} nanotube heterostructures with enhanced photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Liu, L. Z.; Yang, L.; Gan, Z. X.; Wu, X. L., E-mail: hkxlwu@nju.edu.cn, E-mail: paul.chu@cityu.edu.hk [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, and National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chu, Paul K., E-mail: hkxlwu@nju.edu.cn, E-mail: paul.chu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2014-06-09

    p-type ultrathin 3C-SiC nanocrystals are coated on heat-treated n-type TiO{sub 2} nanotube arrays formed by electrochemical etching of Ti sheets to produce heterostructured photocatalysts. Depending on the amounts of 3C-SiC nanocrystals on the TiO{sub 2} nanotubes, photocatalytic degradation of organic species can be enhanced. The intrinsic electric field induced by the heterojunction promotes separation of the photoexcited electrons-holes in both the TiO{sub 2} nanotubes and 3C-SiC nanocrystals. Hence, holes can more effectively travel to the surface of 3C-SiC nanocrystals and there are more electrons on the surface of TiO{sub 2} nanotubes consequently forming more {sup •}O{sub 2}{sup −} and {sup •}OH species to degrade organic molecules.

  16. Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

    Science.gov (United States)

    Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

    2018-03-01

    n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

  17. Regulating Charge and Exciton Distribution in High-Performance Hybrid White Organic Light-Emitting Diodes with n-Type Interlayer Switch

    Science.gov (United States)

    Luo, Dongxiang; Yang, Yanfeng; Xiao, Ye; Zhao, Yu; Yang, Yibin; Liu, Baiquan

    2017-10-01

    The interlayer (IL) plays a vital role in hybrid white organic light-emitting diodes (WOLEDs); however, only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time, has been demonstrated to achieve a high efficiency, high color rendering index (CRI), and low voltage trade-off. The device exhibits a maximum total efficiency of 41.5 lm W-1, the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs (80-88) at practical luminances (≥1000 cd m-2) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V (>1 cd m-2), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs. [Figure not available: see fulltext.

  18. The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

    CERN Document Server

    Kuhnke, M; Lindström, G

    2002-01-01

    The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

  19. Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Reno, J.L. [Sandia National Labs., Albuquerque, NM (United States); Kotera, Nobuo [Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan); Wang, Y. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.

    1998-05-01

    The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared cyclotron resonance measurements gave m{sub c} = 0.056m{sub 0}, where m{sub 0} is the free electron mass. Both measurements show no evidence for any significant conduction-band nonparabolicity.

  20. Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

    Science.gov (United States)

    Zhao, Shirong; Gao, Jianyi; Wang, Shuo; Xie, Hongen; Ponce, Fernando A.; Goodnick, Stephen; Chowdhury, Srabanti

    2017-12-01

    We report on the high-temperature characteristics and stability of both alloyed Ti/Al/Ni/Au ohmic contacts and nonalloyed Al/Au ohmic contacts to n-type GaN at temperatures up to 600 °C in air. The alloyed contacts showed a specific contact resistivity (ρc) of 6.8 × 10‑6 Ω cm2 at room temperature after fabrication. ρc did not change with temperature or show degradation after the application of thermal stress at 600 °C for 4 h in air. The ρc of nonalloyed contacts was reduced by two orders of magnitude and stabilized to 5 × 10‑6 Ω cm2 after the application of high-temperature thermal stress. Transmission electron microscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy were used to analyze the metal–semiconductor interface to understand the formation of the low-resistivity and high-stability ohmic contacts at high temperature. Our study reveals the high stability of both alloyed and nonalloyed ohmic contacts for GaN-based electronic devices operating at high temperatures in air.

  1. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m‑2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  2. The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Karatas, S. [Faculty of Sciences and Arts, Department of Physics, University of Kahramanmaras Suetcue Imam, 46100 Kahramanmaras (Turkey)]. E-mail: skaratas@ksu.edu.tr; Tueruet, A. [Faculty of Sciences and Arts, Department of Physics, Atatuerk University, 25240 Erzurum (Turkey)

    2006-05-31

    The electronic and interface state density distribution properties obtained from current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. SBD parameters such as ideality factor (n), series resistance (R {sub S}) and barrier height ({phi}{sub IV} ) were obtained from I-V and C-V measurements using Cheung's method. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.51-1.78, 7.597-8.167 {omega} and 0.88-1.14 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor.

  3. Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

    Science.gov (United States)

    Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

    2018-04-01

    Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

  4. Evolution of the Electronic Structure of n-Type BaSnO3 Films With Chemical Doping and Photodoping

    Science.gov (United States)

    Lochocki, Edward; Paik, Hanjong; Uchida, Masaki; Schlom, Darrell; Shen, Kyle

    Lanthanum-doped barium stannate (La:BaSnO3) is a transparent conducting oxide well known for its high mobility and its ability to host a surface electron gas. Here we present angle-resolved photoemission (ARPES) measurements of La:BaSnO3 thin films deposited on scandate substrates by molecular beam epitaxy. Increased bulk La content is found to reduce the surface carrier concentration via Fermi level pinning, in contrast to other n-type transparent conducting oxides. Subsequent ARPES measurements made over the course of hours show that photogenerated electron-hole pairs reduce the upward band bending, providing persistent but reversible surface photodoping. Chemical doping and photodoping both induce spectral changes typically associated with oxygen vacancy formation or electronic correlations, even though BaSnO3 exhibits extreme oxygen stability and its valence and conduction bands have no d character. These results establish BaSnO3 as a unique transparent conductor and demonstrate its potential for understanding the broader class of perovskite oxide materials.

  5. Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

    Science.gov (United States)

    Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

    2012-11-26

    The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

  6. Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

    Science.gov (United States)

    Bendjedidi, H.; Attaf, A.; Saidi, H.; Aida, M. S.; Semmari, S.; Bouhdjar, A.; Benkhetta, Y.

    2015-12-01

    Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 °C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 °C with preferential orientation along the (200) and (101) planes, and amorphous at 300 °C. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10-2 Ω·cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

  7. Fragile X mental retardation protein controls synaptic vesicle exocytosis by modulating N-type calcium channel density

    Science.gov (United States)

    Ferron, Laurent; Nieto-Rostro, Manuela; Cassidy, John S.; Dolphin, Annette C.

    2014-04-01

    Fragile X syndrome (FXS), the most common heritable form of mental retardation, is characterized by synaptic dysfunction. Synaptic transmission depends critically on presynaptic calcium entry via voltage-gated calcium (CaV) channels. Here we show that the functional expression of neuronal N-type CaV channels (CaV2.2) is regulated by fragile X mental retardation protein (FMRP). We find that FMRP knockdown in dorsal root ganglion neurons increases CaV channel density in somata and in presynaptic terminals. We then show that FMRP controls CaV2.2 surface expression by targeting the channels to the proteasome for degradation. The interaction between FMRP and CaV2.2 occurs between the carboxy-terminal domain of FMRP and domains of CaV2.2 known to interact with the neurotransmitter release machinery. Finally, we show that FMRP controls synaptic exocytosis via CaV2.2 channels. Our data indicate that FMRP is a potent regulator of presynaptic activity, and its loss is likely to contribute to synaptic dysfunction in FXS.

  8. Drastic Control of Texture in a High Performance n-Type Polymeric Semiconductor and Implications for Charge Transport

    KAUST Repository

    Rivnay, Jonathan

    2011-07-12

    Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer {[N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing, while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material. © 2011 American Chemical Society.

  9. Effects of the L/N-type calcium channel antagonist cilnidipine on morning blood pressure control and peripheral edema formation.

    Science.gov (United States)

    Narita, Sumito; Yoshioka, Yasuko; Ide, Atsumi; Kadokami, Toshiaki; Momii, Hidetoshi; Yoshida, Masayoshi; Ando, Shin-ichi

    2011-01-01

    The L/N-type calcium channel blocker cilnidipine has unique effects including sympathetic nerve suppression and the balanced vasodilatation of arteries and veins that may alleviate morning hypertension (MHT) or peripheral edema caused by calcium channel antagonists. We used ambulatory blood pressure monitoring (ABPM) and a unique peripheral edema measurement to evaluate the effect of morning and bedtime cilnidipine in patients with MHT. Forty-three patients with MHT (60 ± 12 years) were randomly assigned to a morning or bedtime cilnidipine (10-20 mg/day). MHT was defined as a mean systolic blood pressure (SBP) ≥ 135 mm Hg by ABPM within 2 hours after awaking. After 3 months, greater SBP reductions were observed in the bedtime administration group (versus the morning administration group) at 3:30-6:00 AM (-24 ± 20 mm Hg vs. -10 ± 4 mm Hg; P < .05) and at 6:30-9:00 AM (-26 ± 15 mm Hg vs. -14 ± 17 mm Hg; P < .05). Although physical examinations showed leg edema in 16% of the patients, quantitative evaluations did not reveal significant volume gains. Cilnidipine had a greater effect on MHT, without causing significant leg edema, when administered at bedtime. Copyright © 2011 American Society of Hypertension. Published by Elsevier Inc. All rights reserved.

  10. The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes

    KAUST Repository

    Giovannitti, Alexander

    2018-04-24

    We report a design strategy that allows the preparation of solution processable n-type materials from low boiling point solvents for organic electrochemical transistors (OECTs). The polymer backbone is based on NDI-T2 copolymers where a branched alkyl side chain is gradually exchanged for a linear ethylene glycol-based side chain. A series of random copolymers was prepared with glycol side chain percentages of 0, 10, 25, 50, 75, 90, and 100 with respect to the alkyl side chains. These were characterized to study the influence of the polar side chains on interaction with aqueous electrolytes, their electrochemical redox reactions, and performance in OECTs when operated in aqueous electrolytes. We observed that glycol side chain percentages of >50% are required to achieve volumetric charging, while lower glycol chain percentages show a mixed operation with high required voltages to allow for bulk charging of the organic semiconductor. A strong dependence of the electron mobility on the fraction of glycol chains was found for copolymers based on NDI-T2, with a significant drop as alkyl side chains are replaced by glycol side chains.

  11. Resistance change effect in SrTiO3/Si (001) isotype heterojunction

    Science.gov (United States)

    Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

    2018-02-01

    Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

  12. Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

    Science.gov (United States)

    Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

    2017-11-01

    A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.

  13. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  14. Fe3Si surface coating on SiFe steel

    International Nuclear Information System (INIS)

    Schneeweiss, O.; Pizurova, N.; Jiraskova, Y.; Zak, T.; Cornut, B.

    2000-01-01

    Fe 3 Si layers were prepared using chemical vapor deposition of Si on the surface of Go steel and its subsequent heat treatment. The changes in the structure and phase composition after different heat treatment conditions have been analyzed. The coating is characterized by high hardness, good corrosion resistance, high electrical resistivity, and the spin texture which differs from the steel substrate

  15. Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si

    Directory of Open Access Journals (Sweden)

    I. Morsi

    2012-01-01

    Full Text Available Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag structure was investigated by using current-voltage (I-V, capacitance-voltage (C-V, and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (oc, short-circuit current density (sc, fill factor (FF, and energy conversion efficiency (η were calculated. The highest sc, oc, and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is 3.5×1014 and 1.0×1015/cm3 for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination.

  16. Linear dose dependence of ion beam mixing of metals on Si

    International Nuclear Information System (INIS)

    Poker, D.B.; Appleton, B.R.

    1985-01-01

    These experiments were conducted to determine the dose dependences of ion beam mixing of various metal-silicon couples. V/Si and Cr/Si were included because these couples were previously suspected of exhibiting a linear dose dependence. Pd/Si was chosen because it had been reported as exhibiting only the square root dependence. Samples were cut from wafers of (100) n-type Si. The samples were cleaned in organic solvents, etched in hydrofluoric acid, and rinsed with methanol before mounting in an oil-free vacuum system for thin-film deposition. Films of Au, V, Cr, or Pd were evaporated onto the Si samples with a nominal deposition rate of 10 A/s. The thicknesses were large compared with those usually used to measure ion beam mixing and were used to ensure that conditions of unlimited supply were met. Samples were mixed with Si ions ranging in energy from 300 to 375 keV, chosen to produce ion ranges that significantly exceeded the metal film depth. Si was used as the mixing ion to prevent impurity doping of the Si substrate and to exclude a background signal from the Rutherford backscattering (RBS) spectra. Samples were mixed at room temperature, with the exception of the Au/Si samples, which were mixed at liquid nitrogen temperature. The samples were alternately mixed and analyzed in situ without exposure to atmosphere between mixing doses. The compositional distributions after mixing were measured using RBS of 2.5-MeV 4 He atoms

  17. Structural Comparison of n-type and p-type LaAlO3/SrTiO3 Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Christopher

    2011-08-19

    Using a surface x-ray diffraction technique, we investigated the atomic structure of two types of interfaces between LaAlO{sub 3} and SrTiO{sub 3}, that is, p-type (SrO/AlO{sub 2}) and n-type (TiO{sub 2}/LaO) interfaces. Our results demonstrate that the SrTiO{sub 3} in the sample with the n-type interface has a large polarized region, while that with the p-type interface has a limited polarized region. In addition, the atomic intermixing was observed to extend deeper into STO substrate at the n-type interface than at the p-type. These differences result in different degrees of band bending, which likely contributes to the striking difference in electrical conductivity between the two types of interfaces.

  18. SiC-SiC Composite for Fuel Structure Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yueh, Ken

    2017-12-22

    Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureable weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO2 and CO2. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO4 and ZrSiO4 are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO4 during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.

  19. Measurements, Standards, and the SI.

    Science.gov (United States)

    Journal of Chemical Education, 1983

    1983-01-01

    Highlights six papers presented at the Seventh Biennial Conference on Chemical Education (Stillwater, Oklahoma 1982). Topics addressed included history, status, and future of SI units, algebra of SI units, periodic table, new standard-state pressure unit, and suggested new names for mole concept ("numerity" and "chemical amount"). (JN)

  20. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

    International Nuclear Information System (INIS)

    Wang Liancheng; Guo Enqing; Liu Zhiqiang; Yi Xiaoyan; Wang Guohong

    2011-01-01

    Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability. (semiconductor devices)

  1. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    International Nuclear Information System (INIS)

    Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

    2007-01-01

    Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

  2. Detection of protein kinases P38 based on reflectance spectroscopy with n-type porous silicon microcavities for diagnosing hydatidosis hydatid disease

    Science.gov (United States)

    Lv, Xiaoyi; Lv, Guodong; Jia, Zhenhong; Wang, Jiajia; Mo, Jiaqing

    2014-11-01

    Detection of protein kinases P38 of Echinococcus granulosus and its homologous antibody have great value for early diagnosis and treatment of hydatidosis hydatid disease. In this experiment, n-type mesoporous silicon microcavities have been successfully fabricated without KOH etching or oxidants treatment that reported in other literature. We observed the changes of the reflectivity spectrum before and after the antigen-antibody reaction by n-type mesoporous silicon microcavities. The binding of protein kinases P38 and its homologous antibody causes red shifts in the reflection spectrum of the sensor, and the red shift was proportional to the protein kinases P38 concentration with linear relationship.

  3. N-type Cu2O Film for Photocatalytic and Photoelectrocatalytic Processes: Its stability and Inactivation of E. coli

    International Nuclear Information System (INIS)

    Xiong, Liangbin; Ng, Tsz Wai; Yu, Ying; Xia, Dehua; Yip, Ho Yin; Li, Guiying; An, Taicheng; Zhao, Huijun; Wong, Po Keung

    2015-01-01

    Highlights: • Photoelectrocatalytic inactivation of E. coli by Cu 2 O film was firstly reported. • 7 log of E. coli could be completely inactivated in 2 h by Cu 2 O with a 0.1 V bias. • Charge transfer between Cu 2 O and E. coli was monitored by electrochemical technique. • Inactivation of E. coli by electric charges of electrodes was in-depth investigated. • Stability of N-type Cu 2 O as a photocatalyst was studied for the first time. - ABSTRACT: Photoelectrocatalytic (PEC) inactivation of Escherichia coli K-12 by cuprous oxide (Cu 2 O) film irradiated by visible light is firstly reported. A complete inactivation of about 7 log of E. coli was obtained for Cu 2 O film within 6 h. The bacterial inactivation efficiency was significantly improved in a photoelectrochemical cell, in which 7 log of E. coli could be completely inactivated within 2 h by Cu 2 O film with a 0.1 V bias. Electric charge transfer between electrodes and E. coli, and electric charge inactivation towards E. coli were investigated using membrane-separated reactor combined with short circuit photocurrent technique. H 2 O 2 , hole, and toxicity of Cu 2 O film were found responsible for the inactivation of E. coli. Toxicity of copper ions (including Cu 2+ and Cu + ) leakage from Cu 2 O films was determined and the results showed that the amount of leakage copper ions was not toxic to E. coli. Finally, the Cu 2 O film was proved to be effective and reusable for PC and PEC inactivation of E. coli

  4. Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

    International Nuclear Information System (INIS)

    Mamor, M

    2009-01-01

    The barrier heights (BH) of various metals including Pd, Pt and Ni on n-type GaN (M/n-GaN) have been measured in the temperature range 80-400 K with using a current-voltage (I-V) technique. The temperature dependence of the I-V characteristics of M/n-GaN have shown non-ideal behaviors and indicate the presence of a non-uniform distribution of surface gap states, resulting from the residual defects in the as grown GaN. The surface gap states density N ss , as well as its temperature dependence were obtained from the bias and temperature dependence of the ideality factor n(V,T) and the barrier height Φ Bn (V,T). Further, a dependence of zero-bias BH Φ 0Bn on the metal work function (Φ m ) with an interface parameter coefficient of proportionality of 0.47 is found. This result indicates that the Fermi level at the M/n-GaN interface is unpinned. Additionally, the presence of lateral inhomogeneities of the BH, with two Gaussian distributions of the BH values is seen. However, the non-homogeneous SBH is found to be correlated to the surface gap states density, in that Φ 0Bn becomes smaller with increasing N ss . These findings suggest that the lateral inhomogeneity of the SBH is connected to the non-uniform distribution of the density of surface gap states at metal/GaN which is attributed to the presence of native defects in the as grown GaN. Deep level transient spectroscopy confirms the presence of native defects with discrete energy levels at GaN and provides support to this interpretation.

  5. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    International Nuclear Information System (INIS)

    Dingemans, G.; Hoex, B.; Sanden, M. C. M. van de; Kessels, W. M. M.; Engelhart, P.; Seguin, R.; Einsele, F.

    2009-01-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al 2 O 3 was compared with results for thermal SiO 2 . For Al 2 O 3 and Al 2 O 3 /a-SiN x :H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of S eff eff 800 deg. C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H 2 and H 2 O. Al 2 O 3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  6. A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell

    Science.gov (United States)

    Li, Y.; Han, B. C.; Gao, M.; Wan, Y. Z.; Yang, J.; Du, H. W.; Ma, Z. Q.

    2017-09-01

    On the basis of a photon-assisted high frequency capacitance-voltage (C-V) method (1 MHz C-V), an effective approach is developed to evaluate the average interface state density (Dit) of an ITO-SiOx/n-Si heterojunction structure. Tin-doped indium oxide (ITO) films with different thicknesses were directly deposited on (100) n-type crystalline silicon by magnetron sputtering to fabricate semiconductor-insulator-semiconductor (SIS) hetero-interface regions where an ultra-thin SiOx passivation layer was naturally created. The morphology of the SiOx layer was confirmed by X-ray photoelectron spectroscopy depth profiling and transmission electron microscope analysis. The thinness of this SiOx layer was the main reason for the SIS interface state density being more difficult to detect than that of a typical metal-oxide-semiconductor structure. A light was used for photon injection while measuring the C-V of the device, thus enabling the photon-assisted C-V measurement of the Dit. By quantifying decreases of the light-induced-voltage as a variation of the capacitance caused by parasitic charge at interface states the passivation quality within the interface of ITO-SiOx/n-Si could be reasonably evaluated. The average interface state density of these SIS devices was measured as 1.2-1.7 × 1011 eV-1 cm-2 and declined as the passivation layer was made thicker. The lifetime of the minority carriers, dark leakage current, and the other photovoltaic parameters of the devices were also used to determine the passivation.

  7. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  8. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    Science.gov (United States)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  9. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  10. Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

    Science.gov (United States)

    Liang, Jianbo; Ogawa, Tomoki; Hara, Tomoya; Araki, Kenji; Kamioka, Takefumi; Shigekawa, Naoteru

    2018-02-01

    The electrical properties of n+-Si//indium tin oxide (ITO)/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions showed excellent linear properties. The interface resistances of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions were found to be 0.030, 0.025, and 0.029 Ω·cm2, respectively, which are lower than required for concentrator photovoltaics. The interface resistances of all the junctions increased with increasing annealing temperature. The degradation of the interface resistance is lower in n+-Si//ITO/n+-Si junctions than in n+-Si//ITO/p+-Si and p+-Si//ITO/n+-Si junctions, when the annealing temperature is higher than 100 °C. These results demonstrate that the ITO thin film as an intermediate layer has high potential application for the connection of subcells in the fabrication of tandem solar cells.

  11. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  12. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

    International Nuclear Information System (INIS)

    Kobayashi, H.; Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha

    2010-01-01

    We have developed low temperature formation methods of SiO 2 /Si and SiO 2 /SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO 3 aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO 2 layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO 2 gap-state density, and (iii) high band discontinuity energy at the SiO 2 /Si interface arising from the high atomic density of the NAOS SiO 2 layer. For the formation of a relatively thick (i.e., ≥10 nm) SiO 2 layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO 3 and azeotropic HNO 3 aqueous solutions, respectively. In this case, the SiO 2 formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO 2 layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO 2 layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO 2 layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., ≥10 nm) SiO 2 layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 deg. C in

  13. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  14. A TIPS-TPDO-tetraCN-Based n-Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric.

    Science.gov (United States)

    Jung, Sungyeop; Albariqi, Mohammed; Gruntz, Guillaume; Al-Hathal, Thamer; Peinado, Alba; Garcia-Caurel, Enric; Nicolas, Yohann; Toupance, Thierry; Bonnassieux, Yvan; Horowitz, Gilles

    2016-06-15

    Recent improvement in the performance of the n-type organic semiconductors as well as thin gate dielectrics based on cross-linked polymers offers new opportunities to develop high-performance low-voltage n-type OFETs suitable for organic complementary circuits. Using TIPS-tetracyanotriphenodioxazine (TIPS-TPDO-tetraCN) and cross-linked poly(methyl methacrylate) (c-PMMA), respectively as n-type organic semiconductor and gate dielectric, linear regime field-effect mobility (1.8 ± 0.2) × 10(-2) cm(2) V(-1)s(-1), small spatial standard deviation of threshold voltage (∼0.1 V), and operating voltage less than 3 V are attainable with the same device structure and contact materials used commonly for p-type OFETs. Through comparative static and dynamic characterizations of c-PMMA and PMMA gate dielectrics, it is shown that both smaller thickness and larger relative permittivity of c-PMMA contributes to reduced operating voltage. Furthermore, negligible hysteresis brings evidence to small trap states in the semiconductor near gate dielectric of the n-type OFETs with c-PMMA. The use of TIPS-TPDO-tetraCN and c-PMMA is fully compatible with polyethylene terephthalate substrate, giving promise to various flexible applications.

  15. Uniaxial stress influence on lattice, band gap and optical properties of n-type ZnO: first-principles calculations

    International Nuclear Information System (INIS)

    Yang Ping; Li Pei; Zhang Li-Qiang; Wang Xiao-Liang; Wang Huan; Song Xi-Fu; Xie Fang-Wei

    2012-01-01

    The lattice, the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by first-principles calculations. The results show that the lattice constants change linearly with stress. Band gaps are broadened linearly as the uniaxial compressive stress increases. The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction, and the reason for band gap of n-type ZnO changing with stress is also explained. The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy. However, when the energy is higher than 4.0 eV, the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears. There are two peaks in the absorption spectrum in an energy range of 4.0–13.0 eV. The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO, which supplies the theoretical reference value for the modulation of the band gap of doped ZnO. (condensed matter: structural, mechanical, and thermal properties)

  16. Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

    International Nuclear Information System (INIS)

    Alexander, M.

    1992-08-01

    Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

  17. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  18. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  19. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  20. Upgrade Recycling of Cast Iron Scrap Chips towards β-FeSi2 Thermoelectric Materials

    Directory of Open Access Journals (Sweden)

    Assayidatul Laila

    2014-09-01

    Full Text Available The upgrade recycling of cast-iron scrap chips towards β-FeSi2 thermoelectric materials is proposed as an eco-friendly and cost-effective production process. By using scrap waste from the machining process of cast-iron components, the material cost to fabricate β-FeSi2 is reduced and the industrial waste is recycled. In this study, β-FeSi2 specimens obtained from cast iron scrap chips were prepared both in the undoped form and doped with Al and Co elements. The maximum figure of merit (ZT indicated a thermoelectric performance of approximately 70% in p-type samples and nearly 90% in n-type samples compared to β-FeSi2 prepared from pure Fe and other published studies. The use of cast iron scrap chips to produce β-FeSi2 shows promise as an eco-friendly and cost-effective production process for thermoelectric materials.

  1. Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

    Directory of Open Access Journals (Sweden)

    Wolfgang Molnar

    2012-07-01

    Full Text Available Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3 from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW by the well-established vapor–liquid–solid (VLS mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD. These as grown NWs were investigated by means of scanning electron microscopy (SEM and transmission electron microscopy (TEM, as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.

  2. Epitaxial graphene/SiC Schottky ultraviolet photodiode with orders of magnitude adjustability in responsivity and response speed

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Guo, Yunlong; Hu, Weijie; Zhang, Zesheng

    2018-03-01

    A simple optical-electronic device that possesses widescale adjustability in its performance is specially required for realizing multifunctional applications as in optical communication and weak signal detectors. Here, we demonstrate an epitaxial graphene (EG)/n-type SiC Schottky ultraviolet (UV) photodiode with extremely widescale adjustability in its responsivity and response speed. It is found that the response speed of the device can be modulated over seven orders of magnitude from tens of nanoseconds to milliseconds by changing its working bias from 0 to -5 V, while its responsivity can be varied by three orders of magnitude. A 2.18 A/W responsivity is observed at -5 V when a 325 nm laser is irradiated on, corresponding to an external quantum efficiency over 800% ascribed to the trap induced internal gain mechanism. These performances of the EG/SiC Schottky photodiode are far superior to those based on traditional metal/SiC and indicate that the EG/n-type SiC Schottky diode is a good candidate for application in UV photodetection.

  3. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  4. Preparation of three-dimensional nanoporous Si using dealloying by metallic melt and application as a lithium-ion rechargeable battery negative electrode

    Science.gov (United States)

    Wada, Takeshi; Yamada, Junpei; Kato, Hidemi

    2016-02-01

    Silicon is a promising material for negative electrode in Li-ion batteries because of high gravimetric capacity. A Si nanomaterial that can accommodate volume expansion accompanied by lithiation is needed for practical application in Li-ion batteries. We prepare three-dimensional nanoporous interconnected silicon material with controlled pore and ligament sizes by dealloying using an Mg-Si precursor and Bi melt. The Mg atoms in the precursor selectively dissolve into Bi, and the remaining Si atoms self-organize into a nanoporous structure with characteristic length ranging from several ten to hundred nanometer. The Li-ion battery electrodes made from nanoporous silicon exhibit higher capacities, increased cycle lives, and improved rate performances compared with those made from commercial Si nanoparticles. Measurements on the electrical resistivity and electrode thickness change by lithiation/delithiation suggest that the superior performance of nanoporous Si electrode originates from the following: (1) The nanoporous Si has much lower electrical resistivity compared with that of the nanoparticle Si owing to the n-type dopant incorporated during dealloying. (2) The nanoporous Si-based electrode has higher porosity owing to the presence of intra-particle pores, which can accommodate Si expansion up to higher levels of lithiation.

  5. Magnetic field effects and self-assembled n-type nanostructures to increase charge collection in organic photovoltaics

    Science.gov (United States)

    Carter, Austin Roberts

    -accepting fullerenes reduce the population of loosely bound electron-hole pairs, thereby quenching the magnetic field effects. The second approach to increase charge collection in organic photovoltaics uses self-assembled perylene diimide nanostructures in a nanofabric heterojunction. Cyclic voltammetry, photoluminescence quenching and bilayer device measurement shows that perylene diimides are good electron acceptors and potential alternatives to fullerene-based acceptors. Perylene diimides are also excellent n-type conductors; the field-effect transistor mobility of bis(octyl)-perylenediimide (PDI-C8) was measured to be mue =0.05+/-0.01 cm2 V-1 s-1 . In addition, flat perylene diimide molecules tend to pi-pi stack to form nanofibers and nanofabrics using a simple solvent mixture self-assembly procedure. PDI-C8 nanofibers were incorporated into a novel device architecture---the nanofabric hetero junction---to increase collection of electrons. Devices incorporating PDI-C8 nanofibers exhibited a 110% increase in the short circuit current density compared to devices without the nanofibers. This increase is attributed to the fibers increasing the donor-acceptor interfacial area, transporting electrons out of the device along dedicated conduction pathways and reducing the build up of space-charge.

  6. Nickel and iron complexes with N,P,N-type ligands: synthesis, structure and catalytic oligomerization of ethylene.

    Science.gov (United States)

    Kermagoret, Anthony; Tomicki, Falk; Braunstein, Pierre

    2008-06-14

    The N,P,N-type ligands bis(2-picolyl)phenylphosphine (), bis(4,5-dihydro-2-oxazolylmethyl)phenylphosphine (), bis(4,4-dimethyl-2-oxazolylmethyl)phenylphosphine () and bis(2-picolyloxy)phenylphosphine () were used to synthesize the corresponding pentacoordinated Ni(ii) complexes [Ni{bis(2-picolyl)phenylphosphine}Cl(2)] (), [Ni{bis(4,5-dihydro-2-oxazolylmethyl)phenylphosphine}Cl(2)] (), [Ni{bis(4,4-dimethyl-2-oxazolylmethyl)phenylphosphine}Cl(2)] () and [Ni{bis(2-picolyloxy)phenylphosphine}Cl(2)] (), respectively. The hexacoordinated iron complexes [Fe{bis(2-picolyl)phenylphosphine}(2)][Cl(3)FeOFeCl(3)] (), [Fe{bis(4,5-dihydro-2-oxazolylmethyl)phenylphosphine}(2)][Cl(3)FeOFeCl(3)] () and the tetracoordinated complex [Fe{bis(4,4-dimethyl-2-oxazolylmethyl)phenylphosphine}Cl(2)] (abbreviated [FeCl(2)(NPN(Me2)-N,N)]) were prepared by reaction of FeCl(2).4H(2)O with ligands , respectively. The crystal structures of the octahedral complexes and , determined by X-ray diffraction, showed that two tridentate ligands are facially coordinated to the metal centre with a cis-arrangement of the P atoms and the dianion (mu-oxo)bis[trichloroferrate(iii)] compensates the doubly positive charge of the complex. The cyclic voltammograms of and showed two reversible redox couples attributed to the reduction of the dianion (Fe(2)OCl(6))(2-) (-0.24 V for and -0.20 V for vs. SCE) and to the oxidation of the Fe(ii) ion of the complex (0.67 V for and 0.52 V for vs. SCE). The cyclic voltammogram of [FeCl(2)(NPN(Me2)-N,N)] showed a reversible redox couple at -0.17 V vs. SCE assigned to the oxidation of the Fe(ii) atom and an irreversible process at 0.65 V. The complexes , and [FeCl(2)(NPN(Me2)-N,N)] have been evaluated in the catalytic oligomerization of ethylene with AlEtCl(2) or MAO as cocatalyst. The nickel complex proved to be the most active precatalyst in the series, with a turnover frequency (TOF) of 61 800 mol(C(2)H(4)) mol(Ni)(-1) h(-1) with 10 equiv. of AlEtCl(2) and 12 200 mol(C(2)H

  7. Observing the semiconducting band-gap alignment of MoS{sub 2} layers of different atomic thicknesses using a MoS{sub 2}/SiO{sub 2}/Si heterojunction tunnel diode

    Energy Technology Data Exchange (ETDEWEB)

    Nishiguchi, Katsuhiko, E-mail: nishiguchi.katsuhiko@lab.ntt.co.jp; Yamaguchi, Hiroshi; Fujiwara, Akira [NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); Castellanos-Gomez, Andres; Zant, Herre S. J. van der; Steele, Gary A. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands)

    2015-08-03

    We demonstrate a tunnel diode composed of a vertical MoS{sub 2}/SiO{sub 2}/Si heterostructure. A MoS{sub 2} flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS{sub 2} layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS{sub 2} layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

  8. Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

    2006-01-01

    Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

  9. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...

  10. Defect reaction network in Si-doped InAs. Numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  11. Influence of the growth-surface on the incorporation of phosphorus in SiC

    International Nuclear Information System (INIS)

    Rauls, E.; Gerstmann, U.; Frauenheim, Th.

    2005-01-01

    Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

  12. Defect-driven inhomogeneities in Ni /4H-SiC Schottky barriers

    Science.gov (United States)

    Tumakha, S.; Ewing, D. J.; Porter, L. M.; Wahab, Q.; Ma, X.; Sudharshan, T. S.; Brillson, L. J.

    2005-12-01

    Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

  13. Influence of the doping on the lattice sites of Fe in Si

    CERN Document Server

    Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Esteves De Araujo, Araujo Joao Pedro

    2014-01-01

    We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding sites. Here, we focus our analysis on the identification of Fe displaced 0.4-0.6 Å from BC sites and the influence of the doping on the stability of these sites. Fe on near-BC sites is found to be more thermally stable in n+-type Si than in low doped or p+-type Si, and seems to be related to multiple vacancy defects. We suggest that the complexes which trap Fe near BC sites, as well as the formation of substitutional Fe, may play a crucial role in P-diffusion gettering.

  14. Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Rajput, S., E-mail: srajput@uwm.edu; Li, Y. Y.; Li, L. [Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53211 (United States)

    2014-01-27

    Raman spectroscopy and scanning tunneling microscopy/spectroscopy measurements are performed to determine the atomic structure and electronic properties of H-intercalated graphene/SiC(0001) obtained by annealing the as-grown epitaxial graphene in hydrogen atmosphere. While the as-grown graphene is found to be n-type with the Dirac point (E{sub D}) at 450 and 350 meV below Fermi level for the 1st and 2nd layer, the H-intercalated graphene is p-type with E{sub D} at 320 and 200 meV above. In addition, ripples are observed in the now quasi-free standing graphene decoupled from the SiC substrate. This causes fluctuations in the Dirac point that directly follow the undulations of the ripples, resulting in electron and hole puddles in the H-intercalated graphene/SiC(0001)

  15. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

    International Nuclear Information System (INIS)

    Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

    2012-01-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  16. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Matsuhata, Hirofumi; Okumura, Hajime [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-07-28

    Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

  17. Indolo-naphthyridine-6,13-dione Thiophene Building Block for Conjugated Polymer Electronics: Molecular Origin of Ultrahigh n-Type Mobility

    KAUST Repository

    Fallon, Kealan J.

    2016-10-18

    Herein, we present the synthesis and characterization of four conjugated polymers containing a novel chromophore for organic electronics based on an indigoid structure. These polymers exhibit extremely small band gaps of ∼1.2 eV, impressive crystallinity, and extremely high n-type mobility exceeding 3 cm V s. The n-type charge carrier mobility can be correlated with the remarkably high crystallinity along the polymer backbone having a correlation length in excess of 20 nm. Theoretical analysis reveals that the novel polymers have highly rigid nonplanar geometries demonstrating that backbone planarity is not a prerequisite for either narrow band gap materials or ultrahigh mobilities. Furthermore, the variation in backbone crystallinity is dependent on the choice of comonomer. OPV device efficiencies up to 4.1% and charge photogeneration up to 1000 nm are demonstrated, highlighting the potential of this novel chromophore class in high-performance organic electronics.

  18. Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

    Science.gov (United States)

    Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

    2018-03-05

    The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

  19. Preparation of n-type Bi{sub 2}Te{sub 3} thermoelectric materials by non-contact dispenser printing combined with selective laser melting

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Keping; Yan, Yonggao; Zhang, Jian; Mao, Yu; Xie, Hongyao; Zhang, Qingjie; Tang, Xinfeng [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei (China); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, WA (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI (United States)

    2017-06-15

    The manufacturing cost has been a bottle neck for broader applications of thermoelectric (TE) modules. We have developed a rapid, facile, and low cost method that combines non-contact dispenser printing with selective laser melting (SLM) and we demonstrate it on n-type Bi{sub 2}Te{sub 3}-based materials. Using this approach, single phase n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} thin layers with the Seebeck coefficient of -152 μV K{sup -1} at 300 K have been prepared. Assembling such thin layers on top of each other, the performance of thus prepared bulk sample is comparable to Bi{sub 2}Te{sub 3}-based materials fabricated by the conventional techniques. Dispenser printing combined with SLM is a promising manufacturing process for TE materials. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  1. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  2. Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

    2015-05-01

    Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

  3. Two symmetric n-type interfaces SrTiO{sub 3}/LaAlO{sub 3} in perovskite: Electronic properties from density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A. H., E-mail: maalidph@yahoo.co.uk, E-mail: mabujafar@najah.edu [New Technologies—Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Abu-Jafar, M. S., E-mail: maalidph@yahoo.co.uk, E-mail: mabujafar@najah.edu [Department of Physics, An-Najah N. University, P. O. Box 7, Nablus, Palestine (Country Unknown); Al-Douri, Y. [Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Physics Department, Faculty of Science, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes (Algeria)

    2016-06-28

    The first principles study of the (001) two symmetric n-type interfaces between two insulating perovskites, the nonpolar SrTiO{sub 3} (STO), and the polar LaAlO{sub 3} (LAO) was performed. We have analyzed the formation of metallic interface states between the STO and LAO heterointerfaces by using the all-electron full-potential linearized augmented plane-wave approach based on the density functional theory, within the local density approximation, the Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA), and the Engel-Vosko GGA (EVGGA) formalism. It has been found that some bands cross the Fermi energy level (E{sub F}), forming a metallic nature of two symmetric n-type 6.5STO/1.5LAO interfaces with density of states at E{sub F}, N(E{sub F}) of about 3.56 (state/eV/unit cell), and bare electronic specific heat coefficient (γ) of about 0.62 mJ/(mol cell K{sup 2}). The electronic band stature and the partial density of states in the vicinity of E{sub F} are mainly originated from Ti1,2,3,4-3dxy orbitals. These bands are responsible for the metallic behavior and the forming of the Fermi surface of the two symmetric n-type 6.5STO/1.5LAO interfaces. To obtain a clear map of the valence band electronic charge density distribution of the two symmetric n-type 6.5STO/1.5LAO interfaces, we have investigated the bond's nature and the interactions between the atoms. It reveals that the charge is attracted towards O atoms as it is clear that the O atoms are surrounded by uniform blue spheres which indicate the maximum charge accumulation.

  4. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  5. Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

    Science.gov (United States)

    Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

    2017-10-01

    Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

  6. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  7. Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap

    Science.gov (United States)

    Wang, Hui; Shi, Jun-jie; Huang, Pu; Ding, Yi-min; Wu, Meng; Cen, Yu-lang; Yu, Tongjun

    2018-04-01

    Recently, two-dimensional (2D) InSe nanosheet becomes a promising material for electronic and optoelectronic nano-devices due to its excellent electron transport, wide bandgap tunability and good metal contact. The inevitable native point defects are essential in determining its characteristics and device performance. Here we investigate the defect formation energy and thermodynamic transition levels for the most important native defects and clarify the physical origin of n-type conductivity in unintentionally doped 2D InSe by using the powerful first-principles calculations. We find that both surface In adatom and Se vacancy are the key defects, and the In adatom, donated 0.65 electrons to the host, causes the n-type conductivity in monolayer InSe under In-rich conditions. For bilayer or few-layer InSe, the In interstitial within the van der Waals gap, transferred 0.68 electrons to InSe, is found to be the most stable donor defect, which dominates the n-type character. Our results are significant for understanding the defect nature of 2D InSe and improving the related nano-device performance.

  8. Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

    Science.gov (United States)

    Chang, C. S.; Chattopadhyay, S.; Chen, L. C.; Chen, K. H.; Chen, C. W.; Chen, Y. F.; Collazo, R.; Sitar, Z.

    2003-09-01

    Field emission of electrons from narrow-band-gap and wide-band-gap one-dimensional nanostructures were studied. N-type silicon substrates enhanced the emission from the low-band-gap silicon nanowires and carbon nanotubes, whereas p-type substrates were a better choice for field emission from wide-band-gap silicon carbon nitride nanocrystalline thin films and nanorods. The role of the substrate-nanostructure interface was modeled based on different junction mechanisms to explain, qualitatively, the fundamentally different emission behavior of these nanostructures when n- and p-type silicon substrates were used. The results could be explained on the basis of simple carrier transport across the silicon-silicon nanowire interface and subsequent tunneling of electrons for the silicon nanowires. Schottky barrier theory can explain the better field emission of electrons from the n-type silicon supported carbon nanotubes. The decreased barrier height at the interface of the silicon-silicon carbon nitride heterojunction, when p-type silicon substrate was used, could explain the superior field emission in comparison to when n-type silicon substrates were used.

  9. Study of the energy band in n-type GaAs and p-type In P by transmission and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Banai, N.; Khanzadeh, M.

    1998-01-01

    Optical characterization of the n-type In P grown by horizontal Bridgman method was carried out using modular photoluminescence and optical transmission spectroscopy. The measured transmission spectra at room temperature using Cary 17 DX spectrophotometer reveals the band gap energies of 1.4 and 1.34 eV for p-type In P and the n-type GaAs, respectively. Photoluminescence spectra of the above samples was measured at 77 K with the excitation intensity of (20 W/Cm 2 ). The (B-A) transitions occur at 1.405 eV and at 1.382 eV respectively. Three spectra were observed for the n-type GaAs sample, namely, (B-B), (B-A) and another relatively wide spectra at wavelengths above the absorption edge caused by the deep level impurities. The peak position of these spectra are 1.482, 1.4 and 1.36 eV respectively. (author)

  10. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  11. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

    OpenAIRE

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-S...

  12. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  13. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA-g-SiC/PVA......) were determined. Microhardness measurements performed at an applied load of 9.8 mN showed an increase in the Knoop microhardness number (KHN) of PVA containing 0.015 wt% PVA-g-SiC nanocrystals. Detailed analysis of current-voltage data indicates that the conduction mechanism responsible for increase...... in conductivity of PVA-g-SiC/PVA nanocomposite film is voltage dependent and Schottky mechanism is the dominant conduction mechanism at medium and high voltage regions....

  14. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  15. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  16. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    Science.gov (United States)

    Chowdhury, Sauvik

    4H-SiC free-standing substrates (FSS), with long carrier lifetimes up to 10 mus at room temperature. The FSS wafer technology and double sided, ion implanted process used in this research has wide applicability beyond that of BD-IGBTs. As compared to previous reports using epitaxial P+ collectors, this process can be easily adapted for conventional IGBTs, as well as reverse blocking and reverse conducing IGBTs. Finally, the experimental results on fabricated SiC BD-IGBTs are presented. Prototype transistors were fabricated on novel, lightly doped n-type free-standing substrates. On Si-face, the BD- IGBTs showed good conductivity modulation, with a forward voltage drop (VF) of 9.7 V at 50 A/cm2 at room temperature, increasing to 11.5 V at 150 °C. On-state performance in third quadrant operation was limited by high threshold voltage on C-face. We have also demonstrated control over minority carrier injection by using a backgate bias, which can be used to drastically reduce switching losses.

  17. Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

    Science.gov (United States)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

    2018-04-01

    Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

  18. Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

    Directory of Open Access Journals (Sweden)

    S. Purwanto

    2010-04-01

    Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

  19. Si Microwire Array Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Putnam, Morgan C.; Boettcher, Shannon W.; Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Spurgeon, Joshua M.; Warren, Emily L.; Briggs, Ryan M.; Lewis, Nathan S.; Atwater, Harry A.

    2010-01-01

    Si microwire-array solar cells with Air Mass 1.5 Global conversion efficiencies of up to 7.9% have been fabricated using an active volume of Si equivalent to a 4 μm thick Si wafer. These solar cells exhibited open-circuit voltages of 500 mV, short-circuit current densities (J{sub sc}) of up to 24 mA cm{sup -2}, and fill factors >65% and employed Al{sub 2}O{sub 3} dielectric particles that scattered light incident in the space between the wires, a Ag back reflector that prevented the escape of incident illumination from the back surface of the solar cell, and an a-SiN{sub x}:H passivation/anti-reflection layer. Wire-array solar cells without some or all of these design features were also fabricated to demonstrate the importance of the light-trapping elements in achieving a high J{sub sc}. Scanning photocurrent microscopy images of the microwire-array solar cells revealed that the higher J{sub sc} of the most advanced cell design resulted from an increased absorption of light incident in the space between the wires. Spectral response measurements further revealed that solar cells with light-trapping elements exhibited improved red and infrared response, as compared to solar cells without light-trapping elements.

  20. Growth, structure and luminescence properties of multilayer Si/{beta}-FeSi{sub 2}NCs/Si/.../Si nanoheterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Galkin, Nikolay G., E-mail: ngalk@iacp.dvo.ru [Institute of Automation and Control Processes, FEB of RAS, Radio Str. 5, Vladivostok, 690041 (Russian Federation); Chusovitin, Evgeniy A. [Institute of Automation and Control Processes, FEB of RAS, Radio Str. 5, Vladivostok, 690041 (Russian Federation); Shamirsaev, Timur S.; Gutakovski, Anton K.; Latyshev, Alexander V. [Institute of Semiconductor Physics, SB of RAS, Academician Lavrentiev, 13, Novosibirsk, 630090 (Russian Federation)

    2011-10-03

    Multilayer structures (up to 15 layers) with {beta}-FeSi{sub 2} nanocrystallites (NCs) buried in silicon crystalline lattice were grown by successive repetition of reactive deposition epitaxy (RDE) or solid phase epitaxy (SPE) of thin iron film on Si(100) or Si(111) substrates and silicon molecular beam epitaxy (MBE) (100-200 nm). Cross-section high resolution transmission electron microscopy (HR TEM) images and ex situ optical and Raman spectroscopy data prove that NCs formed in silicon matrix have the structure and optical properties of {beta}-FeSi{sub 2}. The growth conditions provide no dislocations in silicon lattice were found in the course of TEM analysis. Two types of NCs depth distribution were observed: (i) layered that corresponds to iron RDE and (ii) uniform that occurs in the case of iron SPE. The uniform NCs distribution points out the fact that during a growth process NCs moves up to the surface. In spite of small nanocrystallites size (5-50 nm) and their distribution in silicon cap layers the significant photoluminescence (PL) signal at 0.8 eV was observed for all grown samples.

  1. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  2. HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories

    International Nuclear Information System (INIS)

    Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.

    2008-01-01

    The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap depths/levels) of the hafnium silicate layers, deposited from a single-source precursor, are deduced from capacitance-voltage and current density-voltage measurements. The oxide trap density of the analyzed HfSiO layers can be tuned to exceed that of silicon nitride. At the same time, a significant reduction of the write voltage is achieved due to a reduced effective oxide thickness. The erase operation, however, is hampered by the lower electric field at the HfSiO layer due to its high dielectric constant. Measurements also indicate that HfSiO exposed to a higher thermal budget during device fabrication results in fewer trapping centers. Retention measurements show that information can be reliably stored in memory cells with a trapping layer of HfSiO for more than 10 years similar to their silicon nitride counterparts. But the thickness of the top and bottom oxides must be increased for compensation of additional charge losses which are due to lower trap depth and free electron mass in HfSiO

  3. Thermal Evaporation Synthesis and Optical Properties of ZnS Microbelts on Si and Si/SiO2 Substrates

    Science.gov (United States)

    Nguyen, V. N.; Khoi, N. T.; Nguyen, D. H.

    2017-06-01

    In this study, we report on the differences in optical properties of zinc sulfide (ZnS) microbelts grown on Si and Si/SiO2 substrates by a thermal evaporation method. Our investigation suggests that the composition and luminescence of the microbelts are dependent on the growth substrate. Field emission scanning electron microscopy images show the formation of nanoparticles with a diameter of 300-400 nm on ZnS microbelts grown on Si substrate. In addition, energy dispersive x-ray spectroscopy analysis combined with x-ray diffraction and Raman measurements reveal the existence of Si on these microbelts which may bond with O to form SiO2 or amorphous silica. In contrast, no Si presents on the microbelts grown on Si/SiO2 substrate. Moreover, photoluminescence measurement at 300 K shows a narrow emission peak in the near-ultraviolet region from microbelts grown on Si/SiO2 substrate but a broad emission band with multi-peaks from microbelts grown on Si substrate. The origin of the luminescence distinction between microbelts is discussed in terms of the differences in the growth substrates and compositions.

  4. Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene.

    Science.gov (United States)

    Tomita, Eri; Kanehashi, Shinji; Ogino, Kenji

    2018-02-27

    It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene) (P3HT) and poly{[ N , N' -bis(2-octyldodecyl)naphthalene-1,4,5,8- bis (dicarboximide)-2,6-diyl]- alt -5,5'-(2,2'-bithiophene)} [P(NDI2OD-T2)], respectively, containing common polystyrene (PSt) inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2)- b -PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm) was decreased, compared with that of the simple homopolymers blend (18.8 nm). From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2) improves short-circuit current density (1.16 to 1.73 mA cm -2 ) and power-conversion efficiency (0.24% to 0.32%). Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility.

  5. Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing.

    Science.gov (United States)

    Jeong, Yong Jin; Yun, Dong-Jin; Jang, Jaeyoung; Park, Seonuk; An, Tae Kyu; Kim, Lae Ho; Kim, Se Hyun; Park, Chan Eon

    2015-03-07

    Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced π-π interactions with C60, which facilitated the formation of a C60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C60 semiconductors. We found that thermal annealing of the C60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V(-1) s(-1). This approach enables the realization of solution-processed C60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.

  6. Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene

    Directory of Open Access Journals (Sweden)

    Eri Tomita

    2018-02-01

    Full Text Available It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene (P3HT and poly{[N,N′-bis(2-octyldodecylnaphthalene-1,4,5,8-bis(dicarboximide-2,6-diyl]-alt-5,5′-(2,2′-bithiophene} [P(NDI2OD-T2], respectively, containing common polystyrene (PSt inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2-b-PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm was decreased, compared with that of the simple homopolymers blend (18.8 nm. From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2 improves short-circuit current density (1.16 to 1.73 mA cm−2 and power-conversion efficiency (0.24% to 0.32%. Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility.

  7. Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene

    Science.gov (United States)

    Tomita, Eri; Kanehashi, Shinji; Ogino, Kenji

    2018-01-01

    It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene) (P3HT) and poly{[N,N′-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} [P(NDI2OD-T2)], respectively, containing common polystyrene (PSt) inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2)-b-PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm) was decreased, compared with that of the simple homopolymers blend (18.8 nm). From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2) improves short-circuit current density (1.16 to 1.73 mA cm−2) and power-conversion efficiency (0.24% to 0.32%). Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility. PMID:29495464

  8. Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

    Science.gov (United States)

    Roy, Pinku; Maiti, Tanmoy

    2018-02-01

    Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

  9. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  10. The Interaction of a N-Type Four Level Atom with the Electromagnetic Field for a Kerr Medium Induced Intensity-Dependent Coupling

    Science.gov (United States)

    Othman, Anas; Yevick, David

    2018-01-01

    The interaction of a N-type four-level atom with a single field in the presence of an intensity-dependent coupling in a nonlinear Kerr medium is investigated. The exact analytic solution is obtained in the case that the atom and electromagnetic field are initially in a higher excited state and a coherent state, respectively. It is then demonstrated that effects such as nonclassical light generation, degree of entanglement stabilization, Kerr medium nonclassical control, and squeezed light are can be more efficiently implemented within this four-level framework than in many competing procedures. Additionally, inversion, linear entropy, Mandel Q-parameter and normal squeezing dynamics are examined.

  11. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    Energy Technology Data Exchange (ETDEWEB)

    Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

    2007-04-01

    Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

  12. Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

    Directory of Open Access Journals (Sweden)

    Ikuo Kurachi

    2016-01-01

    Full Text Available An atmospheric pressure chemical vapor deposition (AP-CVD system has been newly developed for boron silicate glass (BSG film deposition dedicating to solar cell manufacturing. Using the system, thermal boron diffusion from the BSG film is investigated and confirmed in terms of process stability for surface property before BSG deposition and BSG thickness. No degradation in carrier lifetime is also confirmed. A boron diffusion simulator has been newly developed and demonstrated for optimization of this process. Then, the boron thermal diffusion from AP-CVD BSG is considered to be the suitable method for N-type silicon solar cell manufacturing.

  13. Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn

    Directory of Open Access Journals (Sweden)

    Enkhtaivan Lkhagvasuren

    2017-04-01

    Full Text Available Alloys based on the half-Heusler compound TiNiSn with the addition of Mn or with a substitution of Ti by Mn are investigated as high-temperature thermoelectric materials. In both materials an intrinsic phase separation is observed, similar to TiNiSn where Ti has been partially substituted by Hf, with increasing Mn concentration the phase separation drastically reduces the lattice thermal conductivity while the power factor is increased. The thermoelectric performance of the n-type conducting alloy can be optimized both by substitution of Ti by Mn as well as the addition of Mn.

  14. Modeling artificial graphene in Si/SiGe hetrostructures

    Science.gov (United States)

    Maurer, Leon; Gamble, John King; Moussa, Jonathan; Tracy, Lisa; Huang, Shih-Hsien; Chuang, Yen; Li, Jiun-Yun; Liu, Chih-Wen; Lu, Tzu-Ming

    Artificial graphene is a synthetic material made using a nanostructure with identical 2D potential wells arranged in a honeycomb lattice. Unlike normal graphene, the properties of artificial graphene can be controlled by changing the nanostructure geometry and adjusting applied voltages. We perform a theoretical study of artificial graphene formed from a 2D electron gas (2DEG) in Si/SiGe and Ge/SiGe heterostructures by a metal honeycomb gate and a global top gate. While many models of artificial graphene assume a simple form for the potential landscape in the 2DEG, we instead calculate the potential landscape for actual devices with a range of bias voltages and geometries. This allows us to find the resulting bandstructure and calculate transport parameters, which we compare directly to experimental results. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was funded by the Laboratory Directed Research and Development Program. The work at NTU was supported by the Ministry of Science and Technology (103-2622-E-002-031 and 103-2112-M- 002-002-MY3).

  15. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    López, G., E-mail: gema.lopez@upc.edu; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    Highlights: • We use laser doping technique to create highly-doped regions. • Dielectric layers are used as both passivating layer and dopant source. • The high quality of the junctions makes laser doping technique using dielectric layers as dopant source suitable for solar cells applications. - Abstract: In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC{sub x}/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al{sub 2}O{sub 3}) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  16. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Science.gov (United States)

    López, G.; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiCx/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J-V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  17. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-10-30

    Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

  18. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  19. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  20. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  1. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker's indenter ...

  2. The influence of strain on the diffusion of Si dimers on Si(001)

    NARCIS (Netherlands)

    Zoethout, E.; Zoethout, E.; Gurlu, O.; Gürlü, O.; Zandvliet, Henricus J.W.; Poelsema, Bene

    2000-01-01

    The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the

  3. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys

    African Journals Online (AJOL)

    user

    1. Introduction. Aluminium-Silicon (Al-Si) alloys are considered as the most important cast alloys due to their excellent casting characteristics, good corrosion resistance, and good weldability. The fluidity of the Al-Si alloy increases up to eutectic composition (12.5% Si), further, presence of Si reduces hot cracking tendencies ...

  4. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive

  5. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  6. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.|info:eu-repo/dai/nl/304840262; Rudolph, H.|info:eu-repo/dai/nl/304830496

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are

  7. Colligative thermoelectric transport properties in n-type filled CoSb3 determined by guest electrons in a host lattice

    Science.gov (United States)

    Lim, Young Soo; Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon; Park, Cheol-Hee; Kim, Tae Hoon; Park, PumSuk; Kim, Il-Ho; Yang, Jihui

    2016-03-01

    Among many kinds of thermoelectric materials, CoSb3 has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb3 from the viewpoint of "guest electrons in a host lattice." Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb3. Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb3. This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb3 materials.

  8. Colligative thermoelectric transport properties in n-type filled CoSb{sub 3} determined by guest electrons in a host lattice

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Young Soo, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Department of Materials System Engineering, Pukyong National University, Busan 48547 (Korea, Republic of); Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju 52851 (Korea, Republic of); Park, Cheol-Hee, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com; Kim, Tae Hoon; Park, PumSuk [LG Chem/Research Park, Daejeon 34122 (Korea, Republic of); Kim, Il-Ho [Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27909 (Korea, Republic of); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States)

    2016-03-21

    Among many kinds of thermoelectric materials, CoSb{sub 3} has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb{sub 3} from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb{sub 3}. Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb{sub 3}. This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb{sub 3} materials.

  9. Asymmetric Alkyl Side-Chain Engineering of Naphthalene Diimide-Based n-Type Polymers for Efficient All-Polymer Solar Cells.

    Science.gov (United States)

    Jia, Tao; Li, Zhenye; Ying, Lei; Jia, Jianchao; Fan, Baobing; Zhong, Wenkai; Pan, Feilong; He, Penghui; Chen, Junwu; Huang, Fei; Cao, Yong

    2018-02-13

    The design and synthesis of three n-type conjugated polymers based on a naphthalene diimide-thiophene skeleton are presented. The control polymer, PNDI-2HD, has two identical 2-hexyldecyl side chains, and the other polymers have different alkyl side chains; PNDI-EHDT has a 2-ethylhexyl and a 2-decyltetradecyl side chain, and PNDI-BOOD has a 2-butyloctyl and a 2-octyldodecyl side chain. These copolymers with different alkyl side chains exhibit higher melting and crystallization temperatures, and stronger aggregation in solution, than the control copolymer PNDI-2HD that has the same side chain. Polymer solar cells based on the electron-donating copolymer PTB7-Th and these novel copolymers exhibit nearly the same open-circuit voltage of 0.77 V. Devices based on the copolymer PNDI-BOOD with different side chains have a power-conversion efficiency of up to 6.89%, which is much higher than the 4.30% obtained with the symmetric PNDI-2HD. This improvement can be attributed to the improved charge-carrier mobility and the formation of favorable film morphology. These observations suggest that the molecular design strategy of incorporating different side chains can provide a new and promising approach to developing n-type conjugated polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Simultaneous enhancement of electron injection and air stability in N-type organic field-effect transistors by water-soluble polyfluorene interlayers.

    Science.gov (United States)

    Kim, Jihong; Khim, Dongyoon; Kang, Rira; Lee, Seung-Hoon; Baeg, Kang-Jun; Kang, Minji; Noh, Yong-Young; Kim, Dong-Yu

    2014-06-11

    Here, we report the simultaneous attainment of efficient electron injection and enhanced stability under ambient conditions for top-gate/bottom-contact (TG/BC), n-type, organic field-effect transistors (OFETs) using water-soluble polyfluorene derivatives (WPFs). When inserting the WPF interlayers between a semiconductor and the BC Au electrodes, initially the ambipolar (6,6)-phenyl-C61butyric acid methyl ester (PCBM) OFETs were fully converted to unipolar charge transport characteristics that were exclusively n-type with significantly increased electron mobilities as high as 0.12 cm(2)/(V s) and a decreased threshold voltage. These improvements were mostly attributed to the interfacial dipoles of WPF layers that aligned to form a favorable energy band structure for efficient electron injection and to effectively block counter charge carriers. These were confirmed when values for the reduced work function of metal electrodes with WPFs and their correlated contact resistance were measured via the ultraviolet photoemission spectroscopy and the transmission-line method, respectively. Moreover, the WPF interlayers played an important role in air stability of PCBM OFETs that exhibited higher and appreciably enhanced by increasing the ethylene-oxide side chain lengths of WPFs, which presumably was due to the water/oxygen/ion capturing effects in the hydrophilic interlayers.

  11. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  12. Long-term effects of L- and N-type calcium channel blocker on uric acid levels and left atrial volume in hypertensive patients.

    Science.gov (United States)

    Masaki, Mitsuru; Mano, Toshiaki; Eguchi, Akiyo; Fujiwara, Shohei; Sugahara, Masataka; Hirotani, Shinichi; Tsujino, Takeshi; Komamura, Kazuo; Koshiba, Masahiro; Masuyama, Tohru

    2016-11-01

    Left ventricular (LV) diastolic dysfunction is associated with hypertension and hyperuricemia. However, it is not clear whether the L- and N-type calcium channel blocker will improve LV diastolic dysfunction through the reduction of uric acid. The aim of this study was to investigate the effects of anti-hypertensive therapy, the L- and N-type calcium channel blocker, cilnidipine or the L-type calcium channel blocker, amlodipine, on left atrial reverse remodeling and uric acid in hypertensive patients. We studied 62 patients with untreated hypertension, randomly assigned to cilnidipine or amlodipine for 48 weeks. LV diastolic function was assessed with the left atrial volume index (LAVI), mitral early diastolic wave (E), tissue Doppler early diastolic velocity (E') and the ratio (E/E'). Serum uric acid levels were measured before and after treatment. After treatment, systolic and diastolic blood pressures equally dropped in both groups. LAVI, E/E', heart rate and uric acid levels decreased at 48 weeks in the cilnidipine group but not in the amlodipine group. The % change from baseline to 48 weeks in LAVI, E wave, E/E' and uric acid levels were significantly lower in the cilnidipine group than in the amlodipine group. Larger %-drop in uric acid levels were associated with larger %-reduction of LAVI (p uric acid levels.

  13. Colligative thermoelectric transport properties in n-type filled CoSb3 determined by guest electrons in a host lattice

    International Nuclear Information System (INIS)

    Lim, Young Soo; Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon; Park, Cheol-Hee; Kim, Tae Hoon; Park, PumSuk; Kim, Il-Ho; Yang, Jihui

    2016-01-01

    Among many kinds of thermoelectric materials, CoSb 3 has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb 3 from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb 3 . Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb 3 . This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb 3 materials.

  14. Validation of an efficiency calibration procedure for a coaxial n-type and a well-type HPGe detector used for the measurement of environmental radioactivity

    Energy Technology Data Exchange (ETDEWEB)

    Morera-Gómez, Yasser, E-mail: ymore24@gamail.com [Centro de Estudios Ambientales de Cienfuegos, AP 5. Ciudad Nuclear, CP 59350 Cienfuegos (Cuba); Departamento de Química y Edafología, Universidad de Navarra, Irunlarrea No 1, Pamplona 31009, Navarra (Spain); Cartas-Aguila, Héctor A.; Alonso-Hernández, Carlos M.; Nuñez-Duartes, Carlos [Centro de Estudios Ambientales de Cienfuegos, AP 5. Ciudad Nuclear, CP 59350 Cienfuegos (Cuba)

    2016-05-11

    To obtain reliable measurements of the environmental radionuclide activity using HPGe (High Purity Germanium) detectors, the knowledge of the absolute peak efficiency is required. This work presents a practical procedure for efficiency calibration of a coaxial n-type and a well-type HPGe detector using experimental and Monte Carlo simulations methods. The method was performed in an energy range from 40 to 1460 keV and it can be used for both, solid and liquid environmental samples. The calibration was initially verified measuring several reference materials provided by the IAEA (International Atomic Energy Agency). Finally, through the participation in two Proficiency Tests organized by IAEA for the members of the ALMERA network (Analytical Laboratories for the Measurement of Environmental Radioactivity) the validity of the developed procedure was confirmed. The validation also showed that measurement of {sup 226}Ra should be conducted using coaxial n-type HPGe detector in order to minimize the true coincidence summing effect. - Highlights: • An efficiency calibration for a coaxial and a well-type HPGe detector was performed. • The calibration was made using experimental and Monte Carlo simulations methods. • The procedure was verified measuring several reference materials provided by IAEA. • Calibrations were validated through the participation in 2 ALMERA Proficiency Tests.

  15. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  16. Peak response wavelengths of p- and n-type InxGa1-xAs-InP quantum well infrared photodetectors

    International Nuclear Information System (INIS)

    Fu, Y.; Willander, M.; Sengupta, D.K.

    2005-01-01

    p- and n-type In x Ga 1-x As-InP quantum wells are suitable for multi-color infrared photodetector applications in atmospheric windows due to improved barrier quality and carrier-transport properties. We apply the k.p method to study the energy band structures and optical transition properties, which show that the peak response wavelengths of p- and n-type In x Ga 1-x As-InP quantum well infrared photodetectors (QWIPs) are determined not only by the energy distance from the ground sublevels in the quantum well to the energy band edges of extended states, but also by the characteristics of the extended states. The optical phonon scattering process converts the broad absorption spectrum of the p-QWIP from 0 to 16 μm into a short-wavelength spectrum centered at 4.5 μm. The transport of electrons in the extended states of the n-QWIP is characterized by running wave boundary conditions, resulting in a theoretically optimal absorption rate by a 8-nm-thick In 0.53 Ga 0.47 As quantum well. Moreover, a conduction-band offset of 0.5 for an In x Ga 1-x As-InP (x=0.53) heterostructure gives the best data fitting of theoretical and experimental response peaks, whereas 0.55 is generally recommended in the literature. (orig.)

  17. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  18. Fabrication of SiGe/Ge core-shell nanowires by oxidation of SiGe

    OpenAIRE

    Kløw, Frode

    2011-01-01

    As Si technology is reaching its limits in solar cell and transistor applications, ways to improve these devices are being investigated. This study looks at the fabrication process of SiGe/Ge core-shell nanowires (NWs). Larger SiGe column structures can be oxidized to reduce their size and create a SiGe/Ge core-shell structure with a layer of SiO2 on the outside. Initially, SiGe dry oxidation was investigated in epitaxially grown SiGe films with 15% and 20% Ge, focusing on the Ge pileup r...

  19. Study of defects in radiation tolerant semiconductor SiC

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Hisayoshi; Kawasuso, Atsuo; Ohshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    Electron spin resonance (ESR) was used to study defects introduced in n-type 6H-SiC by 3 MeV electron irradiation. Two ESR signals labeled A and B related to radiation induced defects were observed. An ESR signal B can be explained by a fine interaction with an effective spin S=1. The g and D tensors of the signal B were found to be axially symmetric along the c-axis. The principal values of the g were obtained to be g parallel = 2.003 and g perpendicular = 2.008, and the absolute value of the D was 3.96x10{sup -2} cm{sup -1} at 100 K for this signal. It was also found that the value |D| decreased with increasing temperature. Isochronal annealing showed that the A and B centers have annealing stages of {approx_equal}200degC and {approx_equal}800degC, respectively. Tentative structural models are discussed for these ESR centers. (author)

  20. Lattice dislocation in Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Omar, M.S., E-mail: dr_m_s_omar@yahoo.co [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Taha, H.T. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)

    2009-12-15

    Modified formulas were used to calculate lattice thermal expansion, specific heat and Bulk modulus for Si nanowires with diameters of 115, 56, 37 and 22 nm. From these values and Gruneisen parameter taken from reference, mean lattice volumes were found to be as 20.03 A{sup 3} for the bulk and 23.63, 29.91, 34.69 and 40.46 A{sup 3} for Si nanowire diameters mentioned above, respectively. Their mean bonding length was calculated to be as 0.235 nm for the bulk and 0.248, 0.269, 0.282 and 0.297 nm for the nanowires diameter mentioned above, respectively. By dividing the nanowires diameter on the mean bonding length, number of layers per each nanowire size was found to be as 230, 104, 65 and 37 for the diameters mentioned above, respectively. Lattice dislocations in 22 nm diameter wire were found to be from 0.00324 nm for the 1st central lattice to 0.2579 nm for the last surface lattice. Such dislocation was smaller for larger wire diameters. Dislocation concentration found to change in Si nanowires according to the proportionalities of surface thickness to nanowire radius ratios.

  1. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  2. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  3. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  4. Fabrication of Environmentally Resistant NITE-SiC/SiC Composites

    Energy Technology Data Exchange (ETDEWEB)

    Park, J S; Jung, H C [Muroran Establishment, IEST Co., Ltd., 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Ooi, Y; Kishimoto, K; Kohyama, A, E-mail: jspark@iest.jp [OASIS, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan)

    2011-10-29

    NITE-SiC, SiC/SiC qualification of environmental resistance in various conditions is on-going toward early utilization in advanced energy and aero-space systems. Multi-layered SiC/SiC composites for preventing environmental attacks to pyrocarbon interphase was provided. Thermal exposure test in air and liquid metal(Pb and Li-Pb) compatibility test were carried out. It was confirmed the significant loss of PyC interphase in SiC/SiC composites. In case of Li-Pb-layered SiC/SiC composites, an attack of air and liquid metal has been sucessfuly supressed by surface SiC layer

  5. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  6. One-step deposition of ultrafiltration SiC membranes on macroporous SiC supports

    DEFF Research Database (Denmark)

    König, Katja; Boffa, Vittorio; Buchbjerg, Bjarke

    2014-01-01

    We fabricated nearly defect-free SiC membranes for potential ultrafiltration applications by conducting pyrolysis of allylhydrido polycarbosilane in the presence of submicron α-SiC particles. The SiC membranes were developed on commercial macroporous SiC supports by a low-temperature-process in w......We fabricated nearly defect-free SiC membranes for potential ultrafiltration applications by conducting pyrolysis of allylhydrido polycarbosilane in the presence of submicron α-SiC particles. The SiC membranes were developed on commercial macroporous SiC supports by a low......-temperature-process in which allylhydrido polycarbosilane acted to bond together crystalline α-SiC particles to form a porous layer. The suspensions of α-SiC powder and allylhydrido polycarbosilane in hexane or hexane/tetradecane were used for membrane fabrication by dip-coating. By using optimized hexane suspension with 5% w...

  7. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  8. Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

    Science.gov (United States)

    Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

    2018-03-01

    First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

  9. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  10. Preparation of biomorphic SiC ceramics

    Directory of Open Access Journals (Sweden)

    Egelja A.

    2008-01-01

    Full Text Available This paper deals with a new method for producing non-oxide ceramic using wood as a template. SiC with a woodlike microstructure has been prepared by carbothermal reduction reactions of Tilia wood/TEOS composite at 1873K. The porous carbon preform was infiltrated with TEOS (Si(OC2H54, as a source of silica, without pressure at 298K. The morphology of resulting porous SiC ceramics, as well as the conversion mechanism of wood to SiC ceramics, have been investigated by scanning electron microscopy (SEM/EDS and X-ray diffraction analysis (XRD. Obtained SiC ceramics consists of β-SiC with traces of α-SiC.

  11. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays.

    Science.gov (United States)

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-10-29

    Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  12. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  13. Selective fabrication of p-type and n-type thermoelectric micropatterns by the reduction of CuO/NiO mixed nanoparticles using femtosecond laser pulses

    Science.gov (United States)

    Mizoshiri, Mizue; Hata, Seiichi

    2018-01-01

    p-type and n-type thermoelectric micropatterns were selectively fabricated via the reduction and reoxidation of CuO/NiO mixed nanoparticles using femtosecond laser pulses. The micropatterns were formed by raster scanning focused femtosecond laser pulses on a solution film containing CuO and NiO nanoparticles, ethylene glycol, and polyvinylpyrrolidone, followed by the removal of the non-irradiated nanoparticles. Cu-Ni was generated by reductive sintering of the CuO/NiO mixed nanoparticles at laser scanning speeds ranging from 5 to 20 mm/s and a laser fluence of 0.055 J/cm2. In contrast, intense peaks corresponding to Cu2O and NiO were observed in the X-ray diffraction spectrum of the micropattern formed at a scanning speed of 1 mm/s, indicating that Cu2O and NiO were generated via the reoxidation of the reduced metals. The Seebeck coefficients of the micropatterns formed at a fluence of 0.055 J/cm2 and scanning speeds of 5-20 mm/s were between - 32 and - 16 µV/K, whereas that of the micropattern formed at a fluence of 0.055 J/cm2 and scanning speed of 1 mm/s was 250 µV/K. These results suggest that the Seebeck coefficient depends on the generated n-type Cu-Ni and p-type Cu2O and NiO phases. A thermoelectric couple was fabricated by selectively fabricating p-type and n-type thermoelectric elements. The thermoelectric couple exhibited a thermoelectric voltage of 0.25 mV/K when a temperature gradient was applied between its hot and cold sides. The generated voltage was nearly consistent with the estimated voltage based on the Seebeck coefficient. The developed process for selective fabrication is expected to be useful for the direct writing of thermoelectric-type sensors.

  14. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

  15. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    International Nuclear Information System (INIS)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Bhatia, Charanjit S.; Chi, Dongzhi

    2014-01-01

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO x ) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO x films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO x films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiO x films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO x has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO x in the field of high-efficiency silicon wafer solar cells.

  16. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Science.gov (United States)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Chi, Dongzhi; Bhatia, Charanjit S.

    2014-06-01

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiOx films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiOx films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiOx films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiOx has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiOx in the field of high-efficiency silicon wafer solar cells.

  17. Optimizing Performance Parameters of Chemically-Derived Graphene/p-Si Heterojunction Solar Cell.

    Science.gov (United States)

    Batra, Kamal; Nayak, Sasmita; Behura, Sanjay K; Jani, Omkar

    2015-07-01

    Chemically-derived graphene have been synthesized by modified Hummers method and reduced using sodium borohydride. To explore the potential for photovoltaic applications, graphene/p-silicon (Si) heterojunction devices were fabricated using a simple and cost effective technique called spin coating. The SEM analysis shows the formation of graphene oxide (GO) flakes which become smooth after reduction. The absence of oxygen containing functional groups, as observed in FT-IR spectra, reveals the reduction of GO, i.e., reduced graphene oxide (rGO). It was further confirmed by Raman analysis, which shows slight reduction in G-band intensity with respect to D-band. Hall effect measurement confirmed n-type nature of rGO. Therefore, an effort has been made to simu- late rGO/p-Si heterojunction device by using the one-dimensional solar cell capacitance software, considering the experimentally derived parameters. The detail analysis of the effects of Si thickness, graphene thickness and temperature on the performance of the device has been presented.

  18. Amphoteric Behavior of Impurities in GaN Film Grown on Si Substrate

    Science.gov (United States)

    Cho, Hyun-Ick; Lee, Dong-Sik; Lee, Heon-Bok; Hahm, Sung-Ho; Lee, Jung-Hee

    2007-05-01

    Hall measurement presented that an unintentionally doped uniform and crack-free GaN film grown on n-type (111)-oriented Si substrate with high temperature-grown relatively thin AlN single and multiple buffer layer shows p-type conductivity. The position of valence band maximum at the surface of the film measured by the synchrotron radiation photoemission spectroscopy is below Fermi level at 1.09 eV due to band bending at the surface, which is indicative for the p-type nature of the grown film. The n-channel metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on the GaN layer exhibited normally-off mode operation. This cannot be achieved if the GaN layer is not p-type. It is believed that the spatial coordination of auto-doped Si atoms, out-diffused from the substrate, or carbon complexes from metal-organic (MO) precursor favorably occupy the substitutional nitrogen site of the GaN film when the film is under tensile strain during the growth, which clearly explains that the p-type conduction is originated from the stress dependent amphoteric nature of Si atom and/or carbon complex in GaN.

  19. Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

    Directory of Open Access Journals (Sweden)

    Vinay Kabra

    2014-11-01

    Full Text Available A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V and capacitance–voltage (C–V measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

  20. Activation characteristics of ion-implanted Si+ in AlGaN

    International Nuclear Information System (INIS)

    Irokawa, Y.; Fujishima, O.; Kachi, T.; Pearton, S.J.; Ren, F.

    2005-01-01

    Multiple-energy Si + implantation in the range 30-360 keV into Al 0.13 Ga 0.87 N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 deg. C for 5 min. Activation efficiencies close to 100% were obtained for ion doses of 1.0x10 15 cm -2 after annealing at 1375 deg. C, with a resulting sheet resistance of 74 Ω/square. By sharp contrast, the activation efficiency at 1150 deg. C was only 4% for this dose, with a sheet resistance of 1.63x10 4 Ω/square. The activation efficiency was also a function of dose, with a maximum activation percentage of only 55% for lower doses of 1.0x10 14 cm -2 annealed at 1375 deg. C. This is due to the comparatively larger effect of compensating acceptors at the lower dose and is also lower than the corresponding activation of Si in pure GaN under these conditions (78%). The measurement temperature dependence of sheet carrier density showed an activation energy of 23 meV, consistent with the ionization energy of Si in AlGaN

  1. Coherent Phonons Spectroscopy in Si/SiGe superlattices

    Science.gov (United States)

    Michel, Helene; Ezzahri, Younes; Shakouri, Ali; Pernot, Gilles; Rampnoux, Jean-Michel; Dilhaire, Stefan

    2010-03-01

    Ultrafast pump-probe experiments have been extensively used for coherent zone-folded acoustic phonon spectroscopy in semiconductor superlattices (SL). Most of the spectroscopy studies have been realized via impulsive stimulated Raman scattering (ISRS). More recently some studies, focused on Si/SixGe1-x SL, have combined the spectroscopy via ISRS with the spectroscopy of phonons Bragg reflected via picosecond acoustic experiment. In the latter case, sample needs to be covered by a metallic film which serves as a transducer to convert the optical energy into an impulse heating and thermal expansion. This launches coherent acoustic phonons into the SL structure. Here we present a systematic study of coherent phonons in different Si/SixGe1-x SL structures with two different superlattice periods and transducer thicknesses. The measured acoustic spectrums show that the thickness of the transducer should be chosen as function as the SL period to be able to generate and detect both phonons Bragg reflected and excited by ISRS.

  2. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  3. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  4. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  5. Si@SiOx/Graphene Nanosheets Composite: Ball Milling Synthesis and Enhanced Lithium Storage Performance

    Directory of Open Access Journals (Sweden)

    Xiaoyong Tie

    2018-01-01

    Full Text Available Si@SiOx/grapheme nanosheet (Si@SiOx/GNS nanocomposites as high-performance anode materials for lithium-ion batteries are prepared by mechanically blending the mixture of expanded graphite (EG with Si nanoparticles, and characterized by Raman spectrum, X-ray diffraction (XRD, field emission scanning electron microscopy, and transmission electron microscopy. During ball milling process, the size of Si nanoparticles will decrease, and the layer of EG can be peeled off to thin multilayers. Electrochemical tests reveal that the Si@SiOx/GNS nanocomposites show enhanced cycling stability, high reversible capacity, and rate capability, even with high content of active materials of 80% and without electrolyte additives. The retained revisable capacity is 1,055 mAh g−1 after 50 cycles at 0.2 A g−1 and about 63.6% of the initial value. The great electrochemical performance of Si@SiOx/GNS nanocomposites can be ascribed to GNS prepared through heat-treat and ball-milling methods, the decrease in the size of Si nanoparticles and SiOx layer on Si surface, which enhance the interactions between Si and GNS.

  6. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  7. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  8. Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

    International Nuclear Information System (INIS)

    Ni Yi-Qiang; He Zhi-Yuan; Zhong Jian; Yao Yao; Yang Fan; Xiang Peng; Zhang Bai-Jun; Liu Yang

    2013-01-01

    The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal—organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure. (interdisciplinary physics and related areas of science and technology)

  9. AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

    Science.gov (United States)

    Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

    2017-11-01

    Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

  10. Solar hydrogen generation by nanoscale p-n junction of p-type molybdenum disulfide/n-type nitrogen-doped reduced graphene oxide.

    Science.gov (United States)

    Meng, Fanke; Li, Jiangtian; Cushing, Scott K; Zhi, Mingjia; Wu, Nianqiang

    2013-07-17

    Molybdenum disulfide (MoS2) is a promising candidate for solar hydrogen generation but it alone has negligible photocatalytic activity. In this work, 5-20 nm sized p-type MoS2 nanoplatelets are deposited on the n-type nitrogen-doped reduced graphene oxide (n-rGO) nanosheets to form multiple nanoscale p-n junctions in each rGO nanosheet. The p-MoS2/n-rGO heterostructure shows significant photocatalytic activity toward the hydrogen evolution reaction (HER) in the wavelength range from the ultraviolet light through the near-infrared light. The photoelectrochemical measurement shows that the p-MoS2/n-rGO junction greatly enhances the charge generation and suppresses the charge recombination, which is responsible for enhancement of solar hydrogen generation. The p-MoS2/n-rGO is an earth-abundant and environmentally benign photocatalyst for solar hydrogen generation.

  11. Anomalous conductivity-type transition sensing behaviors of n-type porous α-Fe2O3 nanostructures toward H2S

    International Nuclear Information System (INIS)

    Hao Quanyi; Li Limiao; Yin Xiaoming; Liu Shuang; Li Qiuhong; Wang Taihong

    2011-01-01

    Porous urchin-like α-Fe 2 O 3 nanostructures with n-type semiconducting properties were used as gas sensing materials. Interestingly, it was observed abnormal n-p transition sensing behavior induced by the variation of working temperature and p-n transition sensing behavior related to the increase of H 2 S concentration. Large density of unstable surface states resulting from high surface-to-volume ratio would be beneficial for the formation of a surface inversion layer and account for the n-p transition. Furthermore, the as-prepared sensor showed good H 2 S sensing performances with short response/recovery time within 5/10 s, and relatively low detection limit of 1 ppm. These results help us to understand the sensing mechanism of α-Fe 2 O 3 and hint the potential application of the as-prepared sensor in monitoring H 2 S.

  12. TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes

    International Nuclear Information System (INIS)

    Jeon, Joon-Woo; Seong, Tae-Yeon; Kim, Hyunsoo; Kim, Kyung-Kook

    2009-01-01

    We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0-7.2)x10 -4 Ω cm 2 . However, annealing the samples at 300 deg. C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed

  13. Thermoelectric properties of PbSe₀.₅Te₀.₅: x (PbI₂) with endotaxial nanostructures: a promising n-type thermoelectric material.

    Science.gov (United States)

    Rawat, P K; Paul, B; Banerji, P

    2013-05-31

    In the present investigation, we report on the thermoelectric properties of PbSe₀.₅Te₀.₅: x (PbI₂) from room temperature to 625 K. High-resolution transmission electron micrographs of the samples reveal endotaxial nanostructures embedded in a PbSe₀.₅Te₀.₅ matrix. The combined effect of mass fluctuation and nanostructures reduces the thermal conductivity to a great extent compared to PbTe and PbSe, without affecting the carrier mobility. As a result, a thermoelectric figure of merit with a value of 1.5 is achieved at 625 K. This value is significantly higher than that of the available state-of-the-art n-type materials.

  14. Hybrid a-CNH+TiO2+TiN-type surface layers produced on NiTi shape memory alloy for cardiovascular applications.

    Science.gov (United States)

    Witkowska, Justyna; Sowińska, Agnieszka; Czarnowska, Elżbieta; Płociński, Tomasz; Kamiński, Janusz; Wierzchoń, Tadeusz

    2017-09-01

    The goal was to improve the properties of NiTi shape memory alloy to make it suitable for cardiac applications. For this purpose, a hybrid a-CNH+TiO 2 +TiN-type surface layer was produced on NiTi alloy and characterized. The NiTi alloy subjected to hybrid process combining low-temperature oxynitriding under glow discharge conditions and radio frequency chemical vapor deposition process was examined for microstructure, surface topography, corrosion resistance, wettability and surface-free energy, Ni ion release and platelets adhesion, aggregation and activation. The hybrid surface layers showed slightly increased surface roughness, better corrosion resistance, a more hydrophobic nature, decreased surface free energy, smaller release of nickel ions and reduced platelets activation. The produced layers could expand the range of NiTi medical applications.

  15. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

    DEFF Research Database (Denmark)

    Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg

    2017-01-01

    -cost n-type material, Te-doped Mg3Sb1.5Bi0.5, that exhibits a very high figure of merit zT ranging from 0.56 to 1.65 at 300-725 K. Using combined theoretical prediction and experimental validation, we show that the high thermoelectric performance originates from the significantly enhanced power factor...... because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications....

  16. Enhanced power conversion efficiency of p-i-n type organic solar cells by employing a p-layer of palladium phthalocyanine

    KAUST Repository

    Kim, Inho

    2010-11-15

    We demonstrate an enhancement in the power conversion efficiency (PCE) of p-i-n type organic solar cells consisting of zinc phthalocyanine (ZnPc) and fullerene (C60) using a p-layer of palladium phthalocyanine (PdPc). Solar cells employing three different device structures such as ZnPc/ZnPc:C60/C60, PdPc/PdPc:C60/C60, and PdPc/ZnPc:C60/C60 with varying thickness of mixed interlayers were fabricated by thermal evaporation. The mixed i-layers were deposited by co-evaporation of MPc (M=Zn,Pd) and C60 by 1:1 ratio. PCE of 3.7% was obtained for optimized cells consisting of PdPc/ZnPc:C60/C60, while cells with device structure of ZnPc/ZnPc:C60/C60 showed PCE of 3.2%.

  17. Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

    Science.gov (United States)

    Padavala, Balabalaji

    The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, Al

  18. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

    Science.gov (United States)

    Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

    2016-01-01

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

  19. p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties.

    Science.gov (United States)

    Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J

    2014-11-26

    We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

  20. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

    Directory of Open Access Journals (Sweden)

    P. P. Paskov

    2017-09-01

    Full Text Available The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3 was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

  1. Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction

    Science.gov (United States)

    Minamizawa, Yuto; Kitazawa, Tomohiro; Hidaka, Shiro; Toyota, Hideyuki; Nakamura, Shin-ichi; Uchitomi, Naotaka

    2018-04-01

    The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11 cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320 °C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.

  2. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    OpenAIRE

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-01-01

    Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondar...

  3. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  4. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  5. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  6. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  7. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  8. Dependence of bridging oxygen 17O quadrupolar coupling parameters on Si-O distance and Si-O-Si angle

    International Nuclear Information System (INIS)

    Clark, Ted M; Grandinetti, Philip J

    2003-01-01

    Ab initio quantum chemistry calculations and comparisons with experimental 17 O solid-state nuclear magnetic resonance (NMR) investigations were used to determine the dependence of the 17 O quadrupolar coupling constant and asymmetry parameter on the first-coordination-sphere structure around bridging oxygen. The quadrupolar asymmetry parameter was found to be dependent on the Si-O-Si angle, in agreement with previous studies, and independent of the Si-O distance. In contrast, the quadrupolar coupling constant was found to have a strong dependence on Si-O distance as well as Si-O-Si angle. Analytical expressions describing these dependences were proposed and used to develop an approach for relating measured 17 O quadrupolar coupling constant and asymmetry parameter values for bridging oxygen to their Si-O-Si angle and average Si-O distance. Examples of this approach were given using 17 O NMR results from the crystalline silica polymorphs, coesite, α-quartz, cristobalite, and ferrierite

  9. Synthesis of biomorphaus SiC-ceramics

    Directory of Open Access Journals (Sweden)

    Egelja Adela D.

    2007-01-01

    Full Text Available The carbothermal reduction processing of partially mineralized fir (Abies alba samples was used to obtain highly-porous SiC ceramics with cellular structure. The infiltration of TEOS (tetraetilortosilikat, Si(OC2H54 as a silica source, was conducted in order to carry out the mineralization process. Synthesis of the SiC was achieved with a C/SiO2 replica annealing at 1723 K in Ar atmosphere. The obtained samples were characterized using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and energy dispersive spectrometry (EDS. The experimental results revealed that the hierarchical bimorphous wood structure was preserved even after high-temperature treatment. Microstructural characterization of the ceramics revealed the presence of the P-SiC phase and traces of the a-SiC phase.

  10. Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

    Science.gov (United States)

    Hussain, Babar

    The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified

  11. SiC-Based Miniature High-Temperature Cantilever Anemometer

    Science.gov (United States)

    Okojie, Robert S.; Fralick, Gustave; Saad, George J.

    2004-01-01

    The figure depicts a miniature cantilever-type anemometer that has been developed as a prototype of compact, relatively nonintrusive anemometers that can function at temperatures up to 600 C and that can be expected to be commercially mass-producible at low cost. The design of this anemometer, and especially the packaging aspect of the design, is intended to enable measurement of turbulence in the high-temperature, high-vibration environment of a turbine engine or in any similar environment. The main structural components of the anemometer include a single-crystal SiC cantilever and two polycrystalline SiC clamping plates, all made from chemical-vapor-deposited silicon carbide. Fabrication of these components from the same basic material eliminates thermal-expansion mismatch, which has introduced spurious thermomechanical stresses in cantilever-type anemometers of prior design. The clamping plates are heavily oxidized to improve electrical insulation at high temperature. A cavity that serves as a receptacle for the clamped end of the cantilever is etched into one end of one clamping plate. Trenches that collectively constitute a socket for a multipin electrical plug (for connection to external electronic circuitry) are etched into the opposite end of this clamping plate. Metal strips for electrical contact are deposited on one face of the other clamping plate. Piezoresistive single-crystal SiC thin-film strain gauges are etched in the n-type SiC epilayer in a Wheatstone-bridge configuration. Metal contact pads on the cantilever that extend into the clamping-receptacle area, are obtained by deposition and patterning using standard semiconductor photolithography and etching methods. The cantilever and the two clamping plates are assembled into a sandwich structure that is then clamped in a stainless-steel housing. The Wheatstone- bridge carrying SiC cantilever with the metal contact pads on the piezoresistors is slid into the receptacle in the bottom clamping plate

  12. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  13. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  14. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  15. One-dimensional Si nanolines in hydrogenated Si(001)

    Science.gov (United States)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  16. Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO 2 interface

    Science.gov (United States)

    Maida, Osamu; Asano, Akira; Takahashi, Masao; Iwasa, Hitoo; Kobayashi, Hikaru

    2003-09-01

    Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN - ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concentration of the CN species in the surface region after the cyanide treatment is ˜0.25 at.%. Take-off angle-dependent measurements of the XPS spectra indicate that the concentration of the CN species increases with the depth from the Si/SiO 2 interface at least up to ˜2 nm when ultrathin SiO 2 layers are formed at 450 °C after the cyanide treatment. When the cyanide treatment is applied to metal-oxide-semiconductor (MOS) solar cells with structure, the photovoltage greatly increases, leading to a high conversion efficiency of 16.2% in spite of the simple cell structure with no pn-junction. Si-CN bonds are not ruptured by air mass 1.5 100 mW cm -2 irradiation for 1000 h, and consequently the solar cells show no degradation. Neither are Si-CN bonds broken by heat treatment at 800 °C performed after the cyanide treatment. The thermal and irradiation stability of the cyanide treatment is attributable to strong Si-CN bonds, whose bond energy is calculated to be 1 eV higher than that of the Si-H bond energy using a density functional method.

  17. Graphene/Si-nanowire heterostructure molecular sensors.

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-20

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  18. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  19. Si isotope homogeneity of the solar nebula

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric [Department of Earth and Planetary Sciences and McDonnell Center for the Space Sciences, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130 (United States); Jackson, Matthew G. [Department of Earth Science, University of California, Santa Barbara, CA 93109 (United States); Barrat, Jean-Alix, E-mail: eapringle@wustl.edu, E-mail: savage@levee.wustl.edu, E-mail: pringle@ipgp.fr, E-mail: moynier@ipgp.fr, E-mail: jackson@geol.ucsb.edu, E-mail: Jean-Alix.Barrat@univ-brest.fr [Université Européenne de Bretagne, Université de Brest, CNRS UMR 6538 (Domaines Océaniques), I.U.E.M., Place Nicolas Copernic, F-29280 Plouzané Cedex (France)

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  20. Hole trapping in E-beam irradiated SiO2 films

    Science.gov (United States)

    Aitken, J. M.; Dekeersmaecker, R. F.

    1990-07-01

    Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’ SiO2 films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated by avalanche breakdown of the n-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between 1 × 10˜-13 and 1 × 10-14 cm2 is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers are strong evidence for an amphoteric uncharged trap generated by ionizing radiation.

  1. Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

    Science.gov (United States)

    Piskorski, K.; Przewlocki, H.; Esteve, R.; Bakowski, M.

    2012-03-01

    MOS capacitors were fabricated on 3C-SiC n-type substrate (001) with a 10-μm N-type epitaxial layer. An SiO2 layer of the thickness tOX ≈55 nm was deposited by PECVD. Circular Al, Ni, and Au gate contacts 0.7 mm in diameter were formed by ion beam sputtering and lift-off. Energy band diagrams of the MOS capacitors were determined using the photoelectric, electric, and optical measurement methods. Optical method (ellipsometry) was used to determine the gate and dielectric layer thicknesses and their optical indices: the refraction n and the extinction k coefficients. Electrical method of C = f(VG) characteristic measurements allowed to determine the doping density ND and the flat band voltage VFB in the semiconductor. Most of the parameters which were necessary for the construction of the band diagrams and for determination of the basic physical properties of the structures (e.g. the effective contact potential difference ϕMS) were measured by several photoelectric methods and calculated using the measurement data. As a result, complete energy band diagrams have been determined for MOS capacitors with three different gate materials and they are demonstrated for two different gate voltages VG: for the flat-band in the semiconductor (VG = VFB) and for the flat-band in the dielectric (VG = VG0).

  2. High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

    International Nuclear Information System (INIS)

    Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

    1993-01-01

    The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

  3. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  4. 29 Si nuclear magnetic resonance study of URu 2 Si 2 under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Shirer, K. R.; Dioguardi, A. P.; Bush, B. T.; Crocker, J.; Lin, C. H.; Klavins, P.; Cooley, J. C.; Maple, M. B.; Chang, K. B.; Poeppelmeier, K. R.; Curro, N. J.

    2016-01-01

    Wereport 29Si nuclearmagneticresonancemeasurementsofsinglecrystalsandalignedpowdersof URu2Si2 under pressureinthehiddenorderandparamagneticphases.We find thattheKnightshift decreases withappliedpressure,consistentwithpreviousmeasurementsofthestaticmagneticsus- ceptibility.Previousmeasurementsofthespinlatticerelaxationtimerevealedapartialsuppressionof the densityofstatesbelow30K.Thissuppressionpersistsunderpressure,andtheonsettemperatureis mildly enhanced.

  5. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  6. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    Science.gov (United States)

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-11-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.

  7. Recycling of Al-Si die casting scraps for solar Si feedstock

    Science.gov (United States)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  8. Influence of modifier on base Al and Si on structure and elongation Al-7%Si alloy

    Directory of Open Access Journals (Sweden)

    T. Lipiński

    2008-08-01

    Full Text Available A homogenous modifier with Al and Si obtained by the rapid solidification at a cooling rate equal to v=200 K/s was applied to the modification of the Al-7%Si alloy. The different modifiers were obtained by means of the Al-Si alloys. The components Al, Al-7%Si and Al-12%Si were put into crucible containing the liquid Al-7%Si alloy and kept for one minute to obtain a new homogenous alloy which after break-up was homogenous modifier. Both, effect of cooling rate applied to obtain modifier and weight in weight modifier concentration in the melt on structure and elongations of Al-7%Si alloy are determined. A structural, and elongations resulting from the Al-7%Si alloy treatment by modifiers are studied in details.

  9. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  10. Design of flexible PANI-coated CuO-TiO2-SiO2 heterostructure nanofibers with high ammonia sensing response values

    Science.gov (United States)

    Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu

    2017-06-01

    We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO2-SiO2) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO2-SiO2) composite nanofibers. Such flexible inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO2-SiO2/PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO2-SiO2/PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO2, and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO2-SiO2/PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.

  11. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  12. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...... method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics....

  13. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  14. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  15. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  16. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  17. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process......, molten Si totally or partly infiltrates the remaining open regions. This process forms a dense material with cubic (β-)SiC crystallites, of which the majority is imbedded in amorphous Si. The synthesis of preshaped “sprocket” elements demonstrates that desired shapes of such a dense SiC/Si composite...

  18. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

    Science.gov (United States)

    Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

    2013-12-01

    We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm2/V s for the 12-15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2-3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

  19. Effect of starting composition on formation of MoSi2–SiC ...

    Indian Academy of Sciences (India)

    20 h). On the other hand, annealing led to transformation of HTP to low temperature polymorph (LTP) of MoSi2. Mo5Si3 was formed during annealing as a product of a reaction between MoSi2 and excess graphite. Mean grain size <50 nm was ...

  20. Microstructure and abrasive wear studies of laser clad Al-Si/SiC composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Colaco, R.; Ocelik, V.; De Hosson, J. Th. M.; Vilar, R.; Gyulai, J; Szabo, PJ

    2007-01-01

    Surface coatings of Al-Si/SiC metal-matrix composites were deposited on Al-7 wt. % Si alloy substrates by laser cladding. The microstructure of the coatings was characterized by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The microstructure of the coating