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Sample records for n-tio2 thin films

  1. Photocatalytic properties of porous TiO2/Ag thin films

    International Nuclear Information System (INIS)

    Chang, C.-C.; Chen, J.-Y.; Hsu, T.-L.; Lin, C.-K.; Chan, C.-C.

    2008-01-01

    In this study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin-coating technique. By introducing polystyrene (PS) spheres into the precursor solution, porous TiO 2 /Ag thin films were prepared after calcination at a temperature of 500 deg. C for 4 h. Three different sizes (50, 200, and 400 nm) of PS spheres were used to prepare porous TiO 2 films. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry (XRD) and by scanning electron microscopy to reveal structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. When PS spheres of different sizes were introduced after calcination, the as-prepared TiO 2 films exhibited different porous structures. XRD results showed that all TiO 2 /Ag films exhibited a major anatase phase. The photodegradation of porous TiO 2 thin films prepared with 200 nm PS spheres and doped with 1 mol% Ag exhibited the best photocatalytic efficiency where ∼ 100% methylene blue was decomposed within 8 h under UV exposure

  2. Photo-induced hydrophilicity of TiO2-xNx thin films on PET plates

    International Nuclear Information System (INIS)

    Chou, H.-Y.; Lee, E.-K.; You, J.-W.; Yu, S.-S.

    2007-01-01

    TiO 2-x N x thin films were deposited on PET (polyethylene terephthalate) plates by sputtering a TiN target in a N 2 /O 2 plasma and without heating. X-ray photoemission spectroscopy (XPS) was used to investigate the N 1s, Ti 2p core levels and the nitrogen composition in the TiO 2-x N x films. The results indicate that Ti-O-N bonds are formed in the thin films. Two nitrogen states, substitution and interstitial nitrogen atoms, were attributed to peaks at 396 and 399 eV, respectively. It was observed that the nitrogen atoms occupy both the substitutive and interstitial sites in respective of the nitrogen content in the thin films. UV-VIS absorption spectroscopy of PET coated thin films shows a significant shift of the absorption edge to lower energy in the visible-light region. UV and visible-light irradiation are used to activate PET coated thin films for the development of hydrophilicity. The photo-induced surface wettability conversion reaction of the thin films has been investigated by means of water contact angle measurement. PET plates coated with TiO 2-x N x thin films are found to exhibit lower water contact angle than non-coated plates when the surface is illuminated with UV and visible light. The effects of nitrogen doping on photo-generated hydrophilicity of the thin films are investigated in this work

  3. Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

    Directory of Open Access Journals (Sweden)

    Suvarna R. Bathe

    2014-01-01

    Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

  4. Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    WINTEC

    goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.

  5. TiO2 and Cu/TiO2 Thin Films Prepared by SPT

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-12-01

    Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

  6. Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

    International Nuclear Information System (INIS)

    Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

    2006-01-01

    TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

  7. Visible-light photocatalytic activity of nitrided TiO2 thin films

    International Nuclear Information System (INIS)

    Camps, Enrique; Escobar-Alarcon, L.; Camacho-Lopez, Marco Antonio; Casados, Dora A. Solis

    2010-01-01

    TiO 2 thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO 2 films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO 2 and nitrided TiO 2 films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO 2 films had photocatalytic activity, while the unnitrided films did not.

  8. Superhydrophilicity of TiO2 nano thin films

    International Nuclear Information System (INIS)

    Mohammadizadeh, M.R.; Ashkarran, A.A.

    2007-01-01

    Full text: Among the several oxide semiconductors, titanium dioxide has a more helpful role in our environmental purification due to its photocatalytic activity, photo-induced superhydrophilicity, and as a result of them non-toxicity, self cleaning, and antifogging effects. After the discovery of superhydrophilicity of titanium dioxide in 1997, several researches have been performed due to its nature and useful applications. The superhydrophilicity property of the surface allows water to spread completely across the surface rather than remains as droplets, thus making the surface antifog and easy-to-clean. The distinction of photo-induced catalytic and hydrophilicity properties of TiO 2 thin films has been accepted although, the origin of hydrophilicity property has not been recognized completely yet. TiO 2 thin films on soda lime glass were prepared by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550 C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166 nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O∼0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV/Vis. spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450 C calcination temperature, where the film is converted to a superhydrophilic surface after 10 minutes under 2mW/cm 2 UV irradiation. TiO 2 thin film on Si(111), Si(100), and quartz substrates needs less time to be converted to

  9. Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

    Science.gov (United States)

    Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

    2017-08-01

    A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

  10. TiO2 thin-films on polymer substrates and their photocatalytic activity

    International Nuclear Information System (INIS)

    Yang, Jae-Hun; Han, Yang-Su; Choy, Jin-Ho

    2006-01-01

    We have developed dip-coating process for TiO 2 -thin film on polymer substrates (acrylonitrile-butadiene-styrene polymer: ABS, polystyrene: PS). At first, a monodispersed and transparent TiO 2 nano-sol solution was prepared by the controlled hydrolysis of titanium iso-propoxide in the presence of acetylacetone and nitric acid catalyst at 80 deg. C. Powder X-ray diffraction patterns of the dried particles are indicative of crystalline TiO 2 with anatase-type structure. According to the XRD and transmission electron microscopy (TEM) studies, the mean particle size was estimated to be ca. 5 nm. The transparent thin films on ABS and PS substrates were fabricated by dip-coating process by changing the processing variables, such as the number of dip-coating and TiO 2 concentration in nano-sol solution. Scanning electron microscopic (SEM) analysis for the thin film samples reveals that the acetylacetone-modified TiO 2 nano-sol particles are effective for enhancing the interfacial adherence between films and polymeric substrates compared to the unmodified one. Photocatalytic degradation of methylene blue (MB) on the TiO 2 thin-films has also been systematically investigated

  11. Preparation of TiO2 thin films from autoclaved sol containing needle-like anatase crystals

    International Nuclear Information System (INIS)

    Ge Lei; Xu Mingxia; Fang Haibo; Sun Ming

    2006-01-01

    A new inorganic sol-gel method was introduced in this paper to prepare TiO 2 thin films. The autoclaved sol with needle-like anatase crystals was synthesized using titanyl sulfate (TiOSO 4 ) and peroxide (H 2 O 2 ) as starting materials. The transparent anatase TiO 2 thin films were prepared on glass slides from the autoclaved sol by sol-gel dip-coating method. A wide range of techniques such as Fourier transform infrared transmission spectra (FT-IR), X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), scanning electron microscopes, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrum were applied to characterize the autoclaved sol and TiO 2 thin films. The results indicate that the autoclaved sol is flavescent, semitransparent and stable at room temperature. The anatase crystals of TiO 2 films connect together to form net-like structure after calcined and the films become uniform with increasing heating temperature. The surface of the TiO 2 films contain not only Ti and O elements, but also a small amount of N and Na elements diffused from substrates during heat treatment. The TiO 2 films are transparent and their maximal light transmittances exceed 80% under visible light region

  12. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  13. Nano structured TiO2 thin films by polymeric precursor method

    International Nuclear Information System (INIS)

    Stroppa, Daniel Grando; Giraldi, Tania Regina; Leite, Edson Roberto; Varela, Jose Arana; Longo, Elson

    2008-01-01

    This work focuses in optimizing setup for obtaining TiO 2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and NMR were applied for precursor's characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO 2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m 2 /g and monolayers thickness within 20 and 128 nm. (author)

  14. Photocatalytic properties of nanocrystalline TiO2 thin film with Ag additions

    International Nuclear Information System (INIS)

    Chang, C.-C.; Lin, C.-K.; Chan, C.-C.; Hsu, C.-S.; Chen, C.-Y.

    2006-01-01

    In the present study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin coating technique. While, by introducing polystyrene (PS) microspheres, porous TiO 2 /Ag films were obtained after calcining at a temperature of 500 o C. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry, and scanning electron microscopy to reveal the structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. After 500 o C calcination, the microstructure of PS-TiO 2 film without Ag addition exhibited a sponge-like microstructure while significant sintering effect was noticed with Ag additions and the films exhibited a porous microstructure. Meanwhile, coalescence of nanocrystalline anatase-phase TiO 2 can be observed with respect to the sharpening of XRD diffraction peaks. The photodegradation of porous TiO 2 doped with 1 mol% Ag exhibited the best photocatalytic efficiency where 72% methylene blue can be decomposed after UV exposure for 12 h

  15. Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    López-Huerta, Francisco; Cervantes, Blanca; González, Octavio; Hernández-Torres, Julián; García-González, Leandro; Vega, Rosario; Herrera-May, Agustín L.; Soto, Enrique

    2014-01-01

    We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior. PMID:28788667

  16. A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

  17. TiO 2 Thin Films Prepared via Adsorptive Self-Assembly for Self-Cleaning Applications

    KAUST Repository

    Xi, Baojuan

    2012-02-22

    Low-cost controllable solution-based processes for preparation of titanium oxide (TiO 2) thin films are highly desirable, because of many important applications of this oxide in catalytic decomposition of volatile organic compounds, advanced oxidation processes for wastewater and bactericidal treatments, self-cleaning window glass for green intelligent buildings, dye-sensitized solar cells, solid-state semiconductor metal-oxide solar cells, self-cleaning glass for photovoltaic devices, and general heterogeneous photocatalysis for fine chemicals etc. In this work, we develop a solution-based adsorptive self-assembly approach to fabricate anatase TiO 2 thin films on different glass substrates such as simple plane glass and patterned glass at variable compositions (normal soda lime glass or solar-grade borofloat glass). By tuning the number of process cycles (i.e., adsorption-then-heating) of TiO 2 colloidal suspension, we could facilely prepare large-area TiO 2 films at a desired thickness and with uniform crystallite morphology. Moreover, our as-prepared nanostructured TiO 2 thin films on glass substrates do not cause deterioration in optical transmission of glass; instead, they improve optical performance of commercial solar cells over a wide range of incident angles of light. Our as-prepared anatase TiO 2 thin films also display superhydrophilicity and excellent photocatalytic activity for self-cleaning application. For example, our investigation of photocatalytic degradation of methyl orange indicates that these thin films are indeed highly effective, in comparison to other commercial TiO 2 thin films under identical testing conditions. © 2012 American Chemical Society.

  18. Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

    Science.gov (United States)

    Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

    2018-05-01

    Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

  19. QCM gas sensor characterization of ALD-grown very thin TiO2 films

    Science.gov (United States)

    Boyadjiev, S.; Georgieva, V.; Vergov, L.; Szilágyi, I. M.

    2018-03-01

    The paper presents a technology for preparation and characterization of titanium dioxide (TiO2) thin films suitable for gas sensor applications. Applying atomic layer deposition (ALD), very thin TiO2 films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The TiO2 thin films were grown using Ti(iOPr)4 and water as precursors. The surface of the films was observed by scanning electron microscopy (SEM), coupled with energy dispersive X-ray analysis (EDX) used for a composition study. The research was focused on the gas-sensing properties of the films. Films of 10-nm thickness were deposited on quartz resonators with Au electrodes and the QCMs were used to build highly sensitive gas sensors, which were tested for detecting NO2. Although very thin, these ALD-grown TiO2 films were sensitive to NO2 already at room temperature and could register as low concentrations as 50 ppm, while the sorption was fully reversible, and the sensors could be fully recovered. With the technology presented, the manufacturing of gas sensors is simple, fast and cost-effective, and suitable for energy-effective portable equipment for real-time environmental monitoring of NO2.

  20. A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

    International Nuclear Information System (INIS)

    Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

    2012-01-01

    Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

  1. Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

    International Nuclear Information System (INIS)

    Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

    2011-01-01

    There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

  2. Structural and vibrational investigations of Nb-doped TiO2 thin films

    International Nuclear Information System (INIS)

    Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

    2014-01-01

    Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

  3. Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

    Directory of Open Access Journals (Sweden)

    Blanca Cervantes

    2016-07-01

    Full Text Available Cytotoxicity of titanium dioxide (TiO2 thin films on Chinese hamster ovary (CHO-K1 cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C toward the anatase to rutile phase transformation. The root-mean-square (RMS surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm. Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science.

  4. Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

    Science.gov (United States)

    Cervantes, Blanca; López-Huerta, Francisco; Vega, Rosario; Hernández-Torres, Julián; García-González, Leandro; Salceda, Emilio; Herrera-May, Agustín L.; Soto, Enrique

    2016-01-01

    Cytotoxicity of titanium dioxide (TiO2) thin films on Chinese hamster ovary (CHO-K1) cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C) toward the anatase to rutile phase transformation. The root-mean-square (RMS) surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM) results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm). Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science. PMID:28773740

  5. Preparation of an orthodontic bracket coated with an nitrogen-doped TiO(2-x)N(y) thin film and examination of its antimicrobial performance.

    Science.gov (United States)

    Cao, Baocheng; Wang, Yuhua; Li, Na; Liu, Bin; Zhang, Yingjie

    2013-01-01

    A bracket coated with a nitrogen-doped (N-doped) TiO(2-x)N(y) thin film was prepared using the RF magnetron sputtering method. The physicochemical properties of the thin film were measured using X-ray diffraction and energy-dispersive X-ray spectrometry, while the antimicrobial activity of the bracket against common oral pathogenic microbes was assessed on the basis of colony counts. The rate of antimicrobial activity of the bracket coated with nano-TiO(2-x)N(y) thin film against Streptococcus mutans, Lactobacillus acidophilus, Actinomyces viscous, and Candida albicans was 95.19%, 91.00%, 69.44%, and 98.86%, respectively. Scanning electron microscopy showed that fewer microbes adhered to the surface of this newly designed bracket than to the surface of the normal edgewise bracket. The brackets coated with the N-doped TiO(2-x)N(y) thin film showed high antimicrobial and bacterial adhesive properties against normal oral pathogenic bacterial through visible light, which is effective in prevention of enamel demineralization and gingivitis in orthodontic patients.

  6. Raman spectra of TiO2 thin films deposited electrochemically and by spray pyrolysis

    International Nuclear Information System (INIS)

    Shishiyanu, S.; Vartic, V.; Shishiyanu, T.; Stratan, Gh.; Rusu, E.; Zarrelli, M.; Giordano, M.

    2013-01-01

    In this paper we present our experimental results concerning the fabrication of TiO 2 thin films by spray pyrolysis and electrochemical deposition method onto different substrates - Corning glass, Si and optical fibers. The surface morphology of the TiO 2 thin films have been investigated by Atomic Force Microscopy. Raman shift spectra measurements have been done for the optical characterization of the fabricated titania thin films. The post-growth rapid photothermal processing (RPP) at temperatures of 100-800 degrees Celsius for 1-3 min have been applied. Our experimental results prove that by the application of post-growth RPP is possible to essentially improve the crystallinity of the deposited TiO 2 films. (authors)

  7. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  8. Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

    Science.gov (United States)

    Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

    2014-04-01

    In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

  9. Preparation of TiO2-based nanotubes/nanoparticles composite thin film electrodes for their electron transport properties

    International Nuclear Information System (INIS)

    Zhao, Wanyu; Fu, Wuyou; Chen, Jingkuo; Li, Huayang; Bala, Hari; Wang, Xiaodong; Sun, Guang; Cao, Jianliang; Zhang, Zhanying

    2015-01-01

    The composite thin film electrodes were prepared with one-dimensional (1D) TiO 2 -B nanotubes (NTs) and zero-dimensional TiO 2 nanoparticles (NPs) based on different weight ratios. The electron transport properties of the NTs/NPs composite thin film electrodes applied for dye-sensitized solar cells had been investigated systematically. The results indicated that although the amount of dye adsorption decreased slightly, the devices with the NTs/NPs composite thin film electrodes could obtain higher open-circuit voltage and overall conversion efficiency compared to devices with pure TiO 2 NPs electrodes by rational tuning the weight ratio of TiO 2 -B NTs and TiO 2 NPs. When the weight ratio of TiO 2 -B NTs in the NTs/NPs composite thin film electrodes increased, the density of states and recombination rate decreased. The 1D structure of TiO 2 -B NTs can provide direct paths for electron transport, resulting in higher electron lifetime, electron diffusion coefficient and electron diffusion length. The composite thin film electrodes possess the merits of the rapid electron transport of TiO 2 -B NTs and the high surface area of TiO 2 NPs, which has great applied potential in the field of photovoltaic devices. - Highlights: • The composite thin film electrodes (CTFEs) were prepared with nanotubes and nanoparticles. • The CTFEs possess the rapid electron transport and high surface area. • The CTFEs exhibit lower recombination rate and longer electron life time. • The CTFEs have great applied potential in the field of photovoltaic devices

  10. Preparation of Oleyl Phosphate-Modified TiO2/Poly(methyl methacrylate Hybrid Thin Films for Investigation of Their Optical Properties

    Directory of Open Access Journals (Sweden)

    Masato Fujita

    2015-01-01

    Full Text Available TiO2 nanoparticles (NPs modified with oleyl phosphate were synthesized through stable Ti–O–P bonds and were utilized to prepare poly(methyl methacrylate- (PMMA- based hybrid thin films via the ex situ route for investigation of their optical properties. After surface modification of TiO2 NPs with oleyl phosphate, IR and 13C CP/MAS NMR spectroscopy showed the presence of oleyl groups. The solid-state 31P MAS NMR spectrum of the product revealed that the signal due to oleyl phosphate (OP shifted upon reaction, indicating formation of covalent Ti–O–P bonds. The modified TiO2 NPs could be homogeneously dispersed in toluene, and the median size was 16.1 nm, which is likely to be sufficient to suppress Rayleigh scattering effectively. The TEM images of TiO2/PMMA hybrid thin films also showed a homogeneous dispersion of TiO2 NPs, and they exhibited excellent optical transparency even though the TiO2 content was 20 vol%. The refractive indices of the OP-modified TiO2/PMMA hybrid thin films changed higher with increases in TiO2 volume fraction, and the hybrid thin film with 20 vol% of TiO2 showed the highest refractive index (n = 1.86.

  11. Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

    International Nuclear Information System (INIS)

    Tian, Liang; Soum-Glaude, Adurey; Volpi, Fabien; Salvo, Luc; Berthomé, Grégory; Coindeau, Stéphane; Mantoux, Arnaud; Boichot, Raphaël; Lay, Sabine; Brizé, Virginie; Blanquet, Elisabeth; Giusti, Gaël; Bellet, Daniel

    2015-01-01

    Undoped and nitrogen doped TiO 2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH 3 and/or N 2 O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO 2 thin films were deposited on the 3D metallic foam template

  12. Synthesis of photosensitive nanograined TiO2 thin films by SILAR method

    International Nuclear Information System (INIS)

    Patil, U.M.; Gurav, K.V.; Joo, Oh-Shim; Lokhande, C.D.

    2009-01-01

    Nanocrystalline TiO 2 thin films are deposited by simple successive ionic layer adsorption and reaction (SILAR) method on glass and fluorine-doped tin oxide (FTO)-coated glass substrate from aqueous solution. The as-deposited films are heat treated at 673 K for 2 h in air. The change in structural, morphological and optical properties are studied by means of X-ray diffraction (XRD), selected area electron diffraction (SAED), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), transmission electron microscopy (TEM) and UV-vis-NIR spectrophotometer. The results show that the SILAR method allows the formation of anatase, nanocrystalline, and porous TiO 2 thin films. The heat-treated film showed conversion efficiency of 0.047% in photoelectrochemical cell with 1 M NaOH electrolyte.

  13. Photocatalytic activity of Al2O3-doped TiO2 thin films activated with visible light on the bacteria Escherichia coli

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Bravo-Patino, A.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    Al 2 O 3 -doped TiO 2 thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu) 4 and Al(s-OBu) 3 and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al 2 O 3 -doped TiO 2 film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO 2 -Al 2 O 3 films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO 2 was demonstrated. Al 2 O 3 -doped TiO 2 thin films were successful at eliminating E. coli.

  14. Correlation of Photocatalysis and Photoluminescence Effect in Relation to the Surface Properties of TiO2:Tb Thin Films

    Directory of Open Access Journals (Sweden)

    Damian Wojcieszak

    2013-01-01

    Full Text Available In this paper structural, optical, photoluminescence, and photocatalytic properties of TiO2 and TiO2:(2.6 at. % Tb thin films have been compared. Thin films were prepared by high-energy reactive magnetron sputtering process, which enables obtaining highly nanocrystalline rutile structure of deposited films. Crystallites sizes were 8.7 nm and 6.6 nm for TiO2 and TiO2:Tb, respectively. Surface of prepared thin films was homogenous with small roughness of ca. 7.2 and 2.1 nm in case of TiO2 and TiO2:Tb samples, respectively. Optical properties measurements have shown that the incorporation of Tb into TiO2 matrix has not changed significantly the thin films transparency. It also enables obtaining photoluminescence effect in wide range from 350 to 800 nm, what is unique phenomenon in case of TiO2 with rutile structure. Moreover, it has been found that the incorporation of 2.6 at. % of Tb has increased the photocatalytic activity more than two times as compared to undoped TiO2. Additionally, for the first time in the current state of the art, the relationship between photoluminescence effect, photocatalytic activity, and surface properties of TiO2:Tb thin films has been theoretically explained.

  15. Spin Speed and Duration Dependence of TiO2 Thin Films pH Sensing Behavior

    Directory of Open Access Journals (Sweden)

    Muhammad AlHadi Zulkefle

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET pH sensor. TiO2 thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2 thin films were investigated. The spin coated TiO2 thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

  16. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  17. Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

    Institute of Scientific and Technical Information of China (English)

    Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

    2017-01-01

    We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1% vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

  18. Optical and electrical properties of Ti(Cr)O_2:N thin films deposited by magnetron co-sputtering

    International Nuclear Information System (INIS)

    Kollbek, K.; Szkudlarek, A.; Marzec, M.M.; Lyson-Sypien, B.; Cecot, M.; Bernasik, A.; Radecka, M.; Zakrzewska, K.

    2016-01-01

    Graphical abstract: - Highlights: • Co-doped well-crystallized stoichiometric Ti(Cr)O_2:N thin films are deposited. • Magnetron sputtering of ceramic TiO_2 target is a new strategy for co-doping. • Bigger contribution from substitutionally incorporated nitrogen is seen in XPS. • Significant red shift of the fundamental absorption edge is obtained. - Abstract: The paper deals with TiO_2-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N_2 atmosphere. Co-doped samples of Ti(Cr)O_2:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO_2 and TiO_2:N thin films are well crystallized as opposed to those of TiO_2:Cr and Ti(Cr)O_2:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O_2_−_x:N to 2.78 eV in the case of stoichiometric Ti(Cr)O_2:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO_2 lattice. Electrical conductivity of stoichiometric Ti(Cr)O_2:N increases in comparison to co-doped nonstoichiometric TiO_2_−_x thin film and reaches almost the same value as that of TiO_2 stoichiometric film.

  19. Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

    Science.gov (United States)

    Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

    2018-03-01

    The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

  20. Formation of TiO2 domains in Poly (9-vinylcarbazole) thin film by hydrolysis-condensation of a metal alkoxide

    International Nuclear Information System (INIS)

    Barlier, V.; Bounor-Legare, V.; Alcouffe, P.; Boiteux, G.; Davenas, J.

    2007-01-01

    New organic-inorganic hybrid thin films based on Poly (9-vinylcarbazole) (P9VK) and Dioxide titanium (TiO 2 ) bulk-heterojunction were obtained by a hydrolysis-condensation (H-C) process of titanium (IV) isopropoxide in thin film. The TiO 2 distribution in the film was investigated by scanning electron microscopy. The results indicated that homogeneous TiO 2 particles around 100 nm were formed on the surface of the polymer thin film. Photoluminescence spectroscopy has been used to study the charge transfer efficiency in the photoactive layer and results were compared with a simplest elaboration route, the dispersion of TiO 2 anatase in a P9VK solution before spin coating. Results showed that TiO 2 elaborated by H-C exhibits a competitive quenching effect with TiO 2 anatase

  1. Magnetic and structural study of Cu-doped TiO2 thin films

    International Nuclear Information System (INIS)

    Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

    2007-01-01

    Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

  2. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered filmsTiO 2 films with high refractive index are obtained without post-growth annealing

  3. Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

    International Nuclear Information System (INIS)

    Kasai, J.; Nakao, S.; Yamada, N.; Hitosugi, T.; Moriyama, M.; Goshonoo, K.; Hoang, N. L. H.; Hasegawa, T.

    2010-01-01

    Anatase Nb-doped TiO 2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 deg. C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8x10 -4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO 2 was well matched to that of GaN. These findings indicate that Nb-doped TiO 2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

  4. Influence of Nd-Doping on Photocatalytic Properties of TiO2 Nanoparticles and Thin Film Coatings

    Directory of Open Access Journals (Sweden)

    Damian Wojcieszak

    2014-01-01

    Full Text Available Structural, optical, and photocatalytic properties of TiO2 and TiO2:Nd nanopowders and thin films composed of those materials have been compared. Titania nanoparticles with 1, 3, and 6 at. % of Nd-dopant were synthesized by sol-gel method. Additionally, thin films with the same material composition were prepared with the aid of spin-coating method. The analysis of structural investigations revealed that all as-prepared nanopowders were nanocrystalline and had TiO2-anatase structure. The average size of crystallites was ca. 4-5 nm and the correlation between the amount of neodymium and the size of TiO2 crystallites was observed. It was shown that the dopant content influenced the agglomeration of the nanoparticles. The results of photocatalytic decomposition of MO showed that doping with Nd (especially in the amount of 3 at. % increased self-cleaning activity of the prepared titania nanopowder. Similar effect was received in case of the thin films, but the decomposition rate was lower due to their smaller active surface area. However, the as-prepared TiO2:Nd photocatalyst in the form of thin films or nanopowders seems to be a very attractive material for various applications.

  5. Rapid fabrication of mesoporous TiO2 thin films by pulsed fibre laser for dye sensitized solar cells

    Science.gov (United States)

    Hadi, Aseel; Alhabradi, Mansour; Chen, Qian; Liu, Hong; Guo, Wei; Curioni, Michele; Cernik, Robert; Liu, Zhu

    2018-01-01

    In this paper we demonstrate for the first time that a fibre laser with a wavelength of 1070 nm and a pulse width of milliseconds can be applied to generate mesoporous nanocrystalline (nc) TiO2 thin films on ITO coated glass in ambient atmosphere, by complete vaporisation of organic binder and inter-connection of TiO2 nanoparticles, without thermally damaging the ITO layer and the glass substrate. The fabrication of the mesoporous TiO2 thin films was achieved by stationary laser beam irradiation of 1 min. The dye sensitized solar cell (DSSC) with the laser-sintered TiO2 photoanode reached higher power conversion efficiency (PCE) of 3.20% for the TiO2 film thickness of 6 μm compared with 2.99% for the furnace-sintered. Electrochemical impedance spectroscopy studies revealed that the laser sintering under the optimised condition effectively decreased charge transfer resistance and increased electron lifetime of the TiO2 thin films. The use of the fibre laser with over 40% wall-plug efficiency offers an economically-feasible, industrial viable solution to the major challenge of rapid fabrication of large scale, mass production of mesoporous metal oxide thin film based solar energy systems, potentially for perovskite and monolithic tandem solar cells, in the future.

  6. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  7. An impact of the copper additive on photocatalytic and bactericidal properties of TiO2 thin films

    Directory of Open Access Journals (Sweden)

    Wojcieszak Damian

    2017-07-01

    Full Text Available The biological and photocatalytic activity of TiO2 and TiO2:Cu in relation to their structure, surface topography, wettability and optical properties of the thin films was investigated. Thin-film coatings were prepared by magnetron sputtering method in oxygen plasma with use of metallic targets (Ti and Ti-Cu. The results of structural studies revealed that addition of Cu into titania matrix (during the deposition process resulted in obtaining of an amorphous film, while in case of undoped TiO2, presence of nanocrystalline anatase (with crystallites size of 20 nm was found. Moreover, an addition of cooper had also an effect on surface diversification and decrease of its hydrophilicity. The roughness of TiO2:Cu film was 25 % lower (0.6 nm as-compared to titania (0.8 nm. These modifications of TiO2:Cu had an impact on the decrease of its photocatalytic activity, probably as a result of the active surface area decrease. Antibacterial and antifungal properties of the thin films against bacteria (Enterococcus hirae, Staphylococcus aureus, Bacillus subtilis, Escherichia coli and yeast (Candida albicans were also examined. For the purpose of this work the method dedicated for the evaluation of antimicrobial properties of thin films was developed. It was revealed that Cu-additive has a positive impact on neutralization of microorganisms.

  8. Highly antibacterial activity of N-doped TiO2 thin films coated on stainless steel brackets under visible light irradiation

    International Nuclear Information System (INIS)

    Cao, Shuai; Liu, Bo; Fan, Lingying; Yue, Ziqi; Liu, Bin; Cao, Baocheng

    2014-01-01

    In this study, the radio frequency (RF) magnetron sputtering method was used to prepare a TiO 2 thin film on the surface of stainless steel brackets. Eighteen groups of samples were made according to the experimental parameters. The crystal structure and surface morphology were characterized by X-ray diffraction, and scanning electron microscopy, respectively. The photocatalytic properties under visible light irradiation were evaluated by measuring the degradation ratio of methylene blue. The sputtering temperature was set at 300 °C, and the time was set as 180 min, the ratio of Ar to N was 30:1, and annealing temperature was set at 450 °C. The thin films made under these parameters had the highest visible light photocatalytic activity of all the combinations of parameters tested. Antibacterial activities of the selected thin films were also tested against Lactobacillus acidophilus and Candida albicans. The results demonstrated the thin film prepared under the parameters above showed the highest antibacterial activity.

  9. Microwave-assisted synthesis and characterization of poly(acrylic)/SiO2-TiO2 core-shell nanoparticle hybrid thin films

    International Nuclear Information System (INIS)

    Chien, Wen-Chen; Yu, Yang-Yen; Chen, Po-Kan; Yu, Hui-Huan

    2011-01-01

    In this study, poly(acrylic)/SiO 2 -TiO 2 core-shell nanoparticle hybrid thin films were successfully synthesized by microwave-assisted polymerization. The coupling agent 3-(trimethoxysilyl) propyl methacrylate (MSMA) was hydrolyzed with colloidal SiO 2 -TiO 2 core-shell nanoparticles, and then polymerized with two acrylic monomers and initiator to form a precursor solution. The results of this study showed that the spin-coated hybrid films had relatively good surface planarity, high thermal stability, a tunable refractive index (1.525 2 -TiO 2 core-shell nanoparticle hybrid thin films, for potential use in optical applications.

  10. Nanoimprinted distributed feedback lasers comprising TiO2 thin films

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Smith, Cameron; Leung, Michael C.

    2013-01-01

    Design guidelines for optimizing the sensing performance of nanoimprinted second order distributed feedback dye lasers are presented. The guidelines are verified by experiments and simulations. The lasers, fabricated by UV-nanoimprint lithography into Pyrromethene doped Ormocomp thin films on glass......, have their sensor sensitivity enhanced by a factor of up to five via the evaporation of a titanium dioxide (TiO2) waveguiding layer. The influence of the TiO2 layer thickness on the device sensitivity is analyzed with a simple model that accurately predicts experimentally measured wavelength shifts...

  11. TiO2 nanoparticle thin film deposition by matrix assisted pulsed laser evaporation for sensing applications

    International Nuclear Information System (INIS)

    Caricato, A.P.; Capone, S.; Ciccarella, G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Taurino, A.; Tunno, T.; Valerini, D.

    2007-01-01

    The MAPLE technique has been used for the deposition of nanostructured titania (TiO 2 ) nanoparticles thin films to be used for gas sensors applications. An aqueous solution of TiO 2 nanoparticles, synthesised by a novel chemical route, was frozen at liquid nitrogen temperature and irradiated with a pulsed ArF excimer laser in a vacuum chamber. A uniform distribution of TiO 2 nanoparticles with an average size of about 10 nm was deposited on Si and interdigitated Al 2 O 3 substrates as demonstrated by high resolution scanning electron microscopy-field emission gun inspection (SEM-FEG). Energy dispersive X-ray (EDX) analysis revealed the presence of only the titanium and oxygen signals and FTIR (Fourier transform infra-red) revealed the TiO 2 characteristic composition and bond. A comparison with a spin coated thin film obtained from the same solution of TiO 2 nanoparticles is reported. The sensing properties of the films deposited on interdigitated substrates were investigated, too

  12. Characterization of ultra-thin TiO2 films grown on Mo(112)

    International Nuclear Information System (INIS)

    Kumar, D.; Chen, M.S.; Goodman, D.W.

    2006-01-01

    Ultra-thin TiO 2 films were grown on a Mo(112) substrate by stepwise vapor depositing of Ti onto the sample surface followed by oxidation at 850 K. X-ray photoelectron spectroscopy showed that the Ti 2p peak position shifts from lower to higher binding energy with an increase in the Ti coverage from sub- to multilayer. The Ti 2p peak of a TiO 2 film with more than a monolayer coverage can be resolved into two peaks, one at 458.1 eV corresponding to the first layer, where Ti atoms bind to the substrate Mo atoms through Ti-O-Mo linkages, and a second feature at 458.8 eV corresponding to multilayer TiO 2 where the Ti atoms are connected via Ti-O-Ti linkages. Based on these assignments, the single Ti 2p 3/2 peak at 455.75 eV observed for the Mo(112)-(8 x 2)-TiO x monolayer film can be assigned to Ti 3+ , consistent with our previous results obtained with high-resolution electron energy loss spectroscopy

  13. Surface nanostructuring of TiO2 thin films by ion beam irradiation

    International Nuclear Information System (INIS)

    Romero-Gomez, P.; Palmero, A.; Yubero, F.; Vinnichenko, M.; Kolitsch, A.; Gonzalez-Elipe, A.R.

    2009-01-01

    This work reports a procedure to modify the surface nanostructure of TiO 2 anatase thin films through ion beam irradiation with energies in the keV range. Irradiation with N + ions leads to the formation of a layer with voids at a depth similar to the ion-projected range. By setting the ion-projected range a few tens of nanometers below the surface of the film, well-ordered nanorods appear aligned with the angle of incidence of the ion beam. Slightly different results were obtained by using heavier (S + ) and lighter (B + ) ions under similar conditions

  14. Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

    Science.gov (United States)

    Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

    2018-05-01

    We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

  15. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  16. Effect of iron doping on structural and optical properties of TiO2 thin film by sol–gel routed spin coating technique

    Directory of Open Access Journals (Sweden)

    Stephen Lourduraj

    2017-08-01

    Full Text Available Thin films of iron (Fe-doped titanium dioxide (Fe:TiO2 were prepared by sol–gel spin coating technique and further calcined at 450∘C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, ultraviolet–visible spectroscopy (UV–vis and atomic force microscopic (AFM techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.

  17. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rachel L. Wilson

    2018-03-01

    Full Text Available Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes, at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

  18. Thickness Dependent Optical Properties of Sol-gel based MgF2TiO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Siddarth Krishnaraja Achar

    2018-04-01

    Full Text Available MgF2TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.

  19. Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-01-01

    The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

  20. Influence of nanocrystalline structure and surface properties of TiO2 thin films on the viability of L929 cells

    Directory of Open Access Journals (Sweden)

    Osękowska Małgorzata

    2015-09-01

    Full Text Available In this work the physicochemical and biological properties of nanocrystalline TiO2 thin films were investigated. Thin films were prepared by magnetron sputtering method. Their properties were examined by X-ray diffraction, photoelectron spectroscopy, atomic force microscopy, optical transmission method and optical profiler. Moreover, surface wettability and scratch resistance were determined. It was found that as-deposited coatings were nanocrystalline and had TiO2-anatase structure, built from crystallites in size of 24 nm. The surface of the films was homogenous, composed of closely packed grains and hydrophilic. Due to nanocrystalline structure thin films exhibited good scratch resistance. The results were correlated to the biological activity (in vitro of thin films. Morphological changes of mouse fibroblasts (L929 cell line after contact with the surface of TiO2 films were evaluated with the use of a contrast-phase microscope, while their viability was tested by MTT colorimetric assay. The viability of cell line upon contact with the surface of nanocrystalline TiO2 film was comparable to the control sample. L929 cells had homogenous cytoplasm and were forming a confluent monofilm, while lysis and inhibition of cell growth was not observed. Moreover, the viability in contact with surface of examined films was high. This confirms non-cytotoxic effect of TiO2 film surface on mouse fibroblasts.

  1. Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Administrator

    Spray pyrolysis techniques; TiO2 thin films; hydrogen gas response. 1. Introduction ... tion is necessary during the production, storage and use of hydrogen. It is also ..... ient, and 'green': it may be used to large scale industrial application for ...

  2. Enhanced photoelectrochemical and photocatalytic activity of WO3-surface modified TiO2 thin film

    Science.gov (United States)

    Qamar, Mohammad; Drmosh, Qasem; Ahmed, Muhammad I.; Qamaruddin, Muhammad; Yamani, Zain H.

    2015-02-01

    Development of nanostructured photocatalysts for harnessing solar energy in energy-efficient and environmentally benign way remains an important area of research. Pure and WO3-surface modified thin films of TiO2 were prepared by magnetron sputtering on indium tin oxide glass, and photoelectrochemical and photocatalytic activities of these films were studied. TiO2 particles were <50 nm, while deposited WO3 particles were <20 nm in size. An enhancement in the photocurrent was observed when the TiO2 surface was modified WO3 nanoparticles. Effect of potential, WO3 amount, and radiations of different wavelengths on the photoelectrochemical activity of TiO2 electrodes was investigated. Photocatalytic activity of TiO2 and WO3-modified TiO2 for the decolorization of methyl orange was tested.

  3. Effect of laser irradiation on the structural, morphological and electrical properties of polycrystalline TiO2 thin films

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available TiO2 thin film is deposited on glass substrate by sol-gel dip coating technique. After deposition, films were irradiated by continuous wave (CW diode laser at an angle of 45°. XRD shows both the anatase and brookite phases of TiO2. Nano particles of regular and control sizes are appeared in SEM micrographs. Therefore, shape and size of nano particles can be control by using Laser irradiation. The average sheet resistivity of TiO2 thin film irradiated by 0, 2, 4 and 6 min are 6.72 × 105, 5.32 × 105, 3.44 × 105 and 4.95 × 105 (ohm-m respectively, according to four point probe. Keywords: TiO2, Diode laser, XRD, SEM

  4. TiO2 thin film growth using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M.I.B.

    2001-01-01

    Full Text Available Titanium oxide (TiO2 thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C, oxygen flow (7,0 L/min and substrate temperature (400 °C. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and visible and ultra-violet region spectroscopy (UV-Vis. The films deposited on Si (100 substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6.

  5. Chromium doped TiO2 sputtered thin films synthesis, physical investigations and applications

    CERN Document Server

    Hajjaji, Anouar; Gaidi, Mounir; Bessais, Brahim; El Khakani, My Ali

    2014-01-01

    This book presents co-sputtered processes ways to produce chrome doped TiO2 thin films onto various substrates such as quartz, silicon and porous silicon. Emphasis is given on the link between the experimental preparation and physical characterization in terms of Cr content. Moreover, the structural, optical and optoelectronic investigations are emphasized throughout. The book explores the potencial applications of devices based on Cr doped TiO2 thin films as gas sensors and in photocatalysis and in the photovoltaic industry. Also, this book provides extensive leads into research literature, and each chapter contains details which aim to develop awareness of the subject and the methods used. The content presented here will be useful for graduate students as well as researchers in materials science, physics, chemistry and engineering.

  6. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-01-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO 2 /Al 2 O 3 films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm Φ samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO 2 /Al 2 O 3 films, the LIDTs were 6.73±0.47 J/cm 2 and 6.5±0.46 J/cm 2 at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  7. Effect of laser irradiation on the structural, morphological and electrical properties of polycrystalline TiO2 thin films

    Science.gov (United States)

    Khan, M. I.; Ali, Asghar

    TiO2 thin film is deposited on glass substrate by sol-gel dip coating technique. After deposition, films were irradiated by continuous wave (CW) diode laser at an angle of 45°. XRD shows both the anatase and brookite phases of TiO2. Nano particles of regular and control sizes are appeared in SEM micrographs. Therefore, shape and size of nano particles can be control by using Laser irradiation. The average sheet resistivity of TiO2 thin film irradiated by 0, 2, 4 and 6 min are 6.72 × 105, 5.32 × 105, 3.44 × 105 and 4.95 × 105 (ohm-m) respectively, according to four point probe.

  8. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  9. Low Loss Sol-Gel TiO2 Thin Films for Waveguiding Applications

    Directory of Open Access Journals (Sweden)

    Alexis Fischer

    2013-03-01

    Full Text Available TiO2 thin films were synthesized by sol-gel process: titanium tetraisopropoxide (TTIP was dissolved in isopropanol, and then hydrolyzed by adding a water/isopropanol mixture with a controlled hydrolysis ratio. The as prepared sol was deposited by “dip-coating” on a glass substrate with a controlled withdrawal speed. The obtained films were annealed at 350 and 500 °C (2 h. The morphological properties of the prepared films were analyzed by Scanning Electron Microscopy (SEM and Atomic Force Microscopy (AFM. The optical waveguiding properties of TiO2 films were investigated for both annealing temperature using m-lines spectroscopy. The refractive indices and the film thickness were determined from the measured effective indices. The results show that the synthesized planar waveguides are multimodes and demonstrate low propagation losses of 0.5 and 0.8 dB/cm for annealing temperature 350 and 500 °C, respectively.

  10. Characterization of TiO2 Thin Films on Glass Substrate Growth Using DC Sputtering Technique

    International Nuclear Information System (INIS)

    Agus Santoso; Tjipto Sujitno; Sayono

    2002-01-01

    It has been fabricated and characterization a TiO 2 thin films deposited on glass substrate using DC sputtering technique. Fabrication of TiO 2 thin films were carried out at electrode voltage 4 kV, sputtering current 5 mA, vacuum pressure 5 x 10 -4 torr, deposition time 150 minutes, and temperature of the substrate were varied from 150 -350 o C, while as a gas sputter was argon. The results was tested their micro structure using SEM, and crystal structure using XRD and found that the crystal structure of TiO 2 powder before deposited on glass substrate was rutile and anatase with orientation (110) and (200) for anatase and (100) and (111) rutile structure. While the crystal structure which deposited at temperature 150 o C and deposition time 2.5 hours was anatase with orientation (001) and (200). (author)

  11. Structural, Electrical and Optical Properties of TiO2 Thin Film Deposited on the Nano Porous Silicon Template

    Science.gov (United States)

    Bahar, Mahmood; Dermani, Ensieh Khalili

    The porous silicon (PSi), which is produced by the electrochemical etching, has been used as a substrate for the growth of the titanium oxide (TiO2) thin films. By using the EBPVD method, TiO2 thin films have been deposited on the surface of the PSi substrate. TiO2/PSi layers were annealed at the temperature of 400∘C, 500∘C and 600∘C for different tests. The morphology and structures of layers were investigated by the scanning electron microscopy (SEM) and X-ray diffraction (XRD). The current-voltage characteristic curves of samples and the ideality factor of heterojunction were studied. The results showed that the electrical properties of the samples change with increase in the annealing temperature. The optical properties of the prepared samples were investigated by using UV-Vis and photoluminescence (PL) spectroscopy. Green light emission of the PSi combined with the blue light and violet-blue emission obtained from the TiO2/PSi PL spectra. The results showed that the optical band gap energy of the PSi has increased from 1.86eV to 2.93eV due to the deposition of TiO2 thin film.

  12. Surface Modification of Aerosol-Assisted CVD Produced TiO2 Thin Film for Dye Sensitised Solar Cell

    Directory of Open Access Journals (Sweden)

    SuPei Lim

    2014-01-01

    Full Text Available We report a simple and convenient method for the preparation of Ag/TiO2 thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+ on aerosol-assisted chemical vapour deposited TiO2 thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements and J-V characterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC conversion efficiency, which was achieved after modification of the TiO2 film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.

  13. Synthesis of nanocrystalline TiO 2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    A transparent, high purity titanium dioxide thin film composed of densely packed nanometer sized grains has been successfully deposited on a glass substrate at 30°C from an aqueous solution of TiO2–HF with the addition of boric acid as a scavenger by liquid phase deposition technique. From X-ray diffraction ...

  14. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to

  15. Self-organized nanocrack networks: a pathway to enlarge catalytic surface area in sputtered ceramic thin films, showcased for photocatalytic TiO2

    Science.gov (United States)

    Henkel, B.; Vahl, A.; Aktas, O. C.; Strunskus, T.; Faupel, F.

    2018-01-01

    Sputter deposited photocatalytic thin films offer high adherence and mechanical stability, but typically are outperformed in their photocatalytic properties by colloidal TiO2 nanostructures, which in turn typically suffer from problematic removal. Here we report on thermally controlled nanocrack formation as a feasible and batch applicable approach to enhance the photocatalytic performance of well adhering, reactively sputtered TiO2 thin films. Networks of nanoscopic cracks were induced into tailored columnar TiO2 thin films by thermal annealing. These deep trenches are separating small bundles of TiO2 columns, adding their flanks to the overall catalytically active surface area. The variation of thin film thickness reveals a critical layer thickness for initial nanocrack network formation, which was found to be about 400 nm in case of TiO2. The columnar morphology of the as deposited TiO2 layer with weak bonds between respective columns and with strong bonds to the substrate is of crucial importance for the formation of nanocrack networks. A beneficial effect of nanocracking on the photocatalytic performance was experimentally observed. It was correlated by a simple geometric model for explaining the positive impact of the crack induced enlargement of active surface area on photocatalytic efficiency. The presented method of nanocrack network formation is principally not limited to TiO2 and is therefore seen as a promising candidate for utilizing increased surface area by controlled crack formation in ceramic thin films in general.

  16. Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

    Science.gov (United States)

    Kupa, I.; Unal, Y.; Cetin, S. S.; Durna, L.; Topalli, K.; Okyay, A. K.; Ates, H.

    2018-05-01

    TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.

  17. Transparent TiO2 nanowire networks via wet corrosion of Ti thin films for dye-sensitized solar cells

    Science.gov (United States)

    Shin, Eunhye; Jin, Saera; Hong, Jongin

    2017-09-01

    Transparent TiO2 nanowire networks were prepared by corrosion of Ti thin films on F-doped SnO2 glass substrates in an alkaline (potassium hydroxide: KOH) solution. The formation of the porous TiO2 nanostructures from the Ti thin films was thoroughly investigated. Dye-sensitized solar cells with a photoanode of 1.2-μm-thick nanowire networks exhibit an average optical transmittance of 40% in the visible light region and a power conversion efficiency of 1.0% under one sun illumination.

  18. Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell

    International Nuclear Information System (INIS)

    Narita, Tomoki; Iida, Tamio; Ogawa, Shunsuke; Mizuno, Kouichi; So, Jisung; Kondo, Akihiro; Yoshida, Norimitsu; Itoh, Takashi; Nonomura, Shuichi; Tanaka, Yasuhito

    2008-01-01

    The effects of nitrogen ion bombardment on TiO 2 films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO 2 film increased with irradiation time. The refractive index n of the TiO 2 film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 x 10 -2 to 1.2 x 10 -1 S/cm by the irradiation. These results are due to the formation of Ti-N bonds and oxygen vacancies in the film

  19. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx

  20. Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

    2007-01-01

    We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

  1. Studies of LPCVD and anodised TiO2 thin films and their photoelectrocatalytic photochemical properties for destruction of organic effluents

    International Nuclear Information System (INIS)

    Tian, F.

    2001-01-01

    TiO 2 thin films prepared by CVD and anodisation methods and their applications for the photoelectrocatalytic and photocatalytic destruction of organic effluents are described in this thesis. The theoretical background of CVD, photoelectrocatalysis (PEC) and photocatalysis (PC) is introduced in Chapter 1. This chapter also contains an intensive literature review about TiO 2 thin film preparation, mainly by CVD, and about PEC and PC destruction of organic effluents by TiO 2 thin films. The experimental methods, which include CVD reactors, PEC cells and film characterisation and chemical analysis, are described in Chapter 2. The results for TiO 2 films deposited by LPCVD on SnO 2 coated glass using either TTIP or TTB precursors in the presence of O 2 , with or without water as a reagent, are discussed in Chapter 3 for a small CVD reactor and Chapter 4 for a large reactor. The effects of precursor, water and annealing on the crystal structure of the films have been investigated and compared. It was found that phase transition temperatures for changes from amorphous to anatase and anatase to rutile with TTIP were higher than those obtained with TTB. Water also had an effect by decreasing the temperature for depositing crystalline films. The other kind of TiO 2 films prepared by anodisation of titanium mesh was studied and the results are presented in Chapter 5. PEC or PC destruction of MPA, RDX and 4-CP have been studied using TiO 2 thin film anodes in small and large PEC reactors which are described in Chapter 6 and Chapter 7, respectively. PC destruction rates of organics are found to be improved significantly with an applied potential; i.e. by a PEC process. The effects of film properties, such as film crystallinity, thickness and film type on the PEC and PC efficiencies have been investigated. It was found that the different behaviour of films in PEC processes probably was due to surface effects rather than internal electric field differences. The extent of PEC and

  2. Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

    2007-01-01

    Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

  3. Photoelectrocatalytic Degradation of Sodium Oxalate by TiO2/Ti Thin Film Electrode

    Directory of Open Access Journals (Sweden)

    Chen-Yu Chang

    2012-01-01

    Full Text Available The photocatalytically active TiO2 thin film was deposited on the titanium substrate plate by chemical vapor deposition (CVD method, and the photoelectrocatalytic degradation of sodium oxalate was investigated by TiO2 thin film reactor prepared in this study with additional electric potential at 365 nm irradiation. The batch system was chosen in this experiment, and the controlled parameters were pH, different supporting electrolytes, applied additional potential, and different electrolyte solutions that were examined and discussed. The experimental results revealed that the additional applied potential in photocatalytic reaction could prohibit recombination of electron/hole pairs, but the photoelectrocatalytic effect was decreased when the applied electric potential was over 0.25 V. Among the electrolyte solutions added, sodium sulfate improved the photoelectrocatalytic effect most significantly. At last, the better photoelectrocatalytic degradation of sodium oxalate occurred at pH 3 when comparing the pH influence.

  4. A Humidity Sensor Based on Nb-doped Nanoporous TiO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Mansoor Anbia

    2011-11-01

    Full Text Available The humidity sensing properties of the sensor fabricated from Nb-doped nanoporous TiO2 by screen-printing on the alumina substrate with Ag-Pd interdigital electrodes have been investigated. The nanoporous thin film has been prepared by sol-gel technique. The product has been characterized by X-ray diffraction and scanning electron microscopy to analyze the structure and its morphology. It is found that the impedance of this sensor changes more than four orders of magnitude in the relative humidity (RH range of 11–95 % at 25 °C. The response and recovery time of the sensor are about 19 and 25 s, respectively, during the RH variation from 11 to 95 %. The sensor shows high humidity sensitivity, rapid response and recovery, prominent stability, good repeatability and narrow hysteresis loop. These results indicate that Nb-doped nanoporous TiO2 thin films have a great potential for humidity sensing applications in room temperature operations.

  5. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    Abstract. Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at ..... This work was partially supported by The Management Unit of Scientific Research Project of Bozok University and Hitit. University.

  6. The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Brus V. V.

    2010-10-01

    Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

  7. A weak-light-responsive TiO2/g-C3N4 composite film: photocatalytic activity under low-intensity light irradiation.

    Science.gov (United States)

    Wang, Peifang; Guo, Xiang; Rao, Lei; Wang, Chao; Guo, Yong; Zhang, Lixin

    2018-05-10

    A TiO 2 /g-C 3 N 4 composite photocatalytic film was prepared by in situ synthesis method and its photocatalytic capability under weak-visible-light condition was studied. The co-precursor with different ratio of melamine and TiO 2 sol-gel precursor were treated using ultrasonic mixing, physical deposition, and co-sintering method to form the smooth, white-yellow, and compact TiO 2 /g-C 3 N 4 composite films. The prepared TiO 2 /g-C 3 N 4 materials were characterized by SEM, TEM, EDS, XRD, BET, VBXPS, and UV-vis diffuse reflectance spectra. The results of composite showed that TiO 2 and g-C 3 N 4 have close interfacial connections which are favorable to charge transfer between these two semiconductors with suitable band structure, g-C 3 N 4 retard the anatase-to-rutile phase transition of TiO 2 significantly, the specific surface area were increased with g-C 3 N 4 ratio raised. Under weak-light irradiation, composite films photocatalytic experiments exhibited RhB removal efficiency approaching 90% after three recycles. Powders suspension degradation experiments revealed the removal efficiency of TiO 2 /g-C 3 N 4 (90.8%) was higher than pure TiO 2 (52.1%) and slightly lower than pure g-C 3 N 4 (96.6%). By control experiment, the enhanced photocatalysis is ascribed to the combination of TiO 2 and g-C 3 N 4 , which not only produced thin films with greater stability but also formed heterojunctions that can be favorable to charge transfer between these two semiconductors with suitable band structure. This study presents the potential application of photocatalytic film in the wastewater treatment under weak-light situation.

  8. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  9. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  10. Photocatalytic decomposition of diclofenac potassium using silver-modified TiO2 thin films

    International Nuclear Information System (INIS)

    Cavalheiro, A.A.; Bruno, J.C.; Saeki, M.J.; Valente, J.P.S.; Florentino, A.O.

    2008-01-01

    The effects of silver insertion on the TiO 2 photocatalytic activity for the degradation of diclofenac potassium were reported here. Techniques such as X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy were used to comprehend the relation between structure and properties of the silver-modified TiO 2 thin films obtained by the sol-gel method. The lattice parameters and the crystallinity of TiO 2 anatase phase were affected by inserted silver, and the film thickness increased about 4 nm for each 1 wt.% of silver inserted. The degradation of diclofenac potassium and by-products reached an efficiency of 4.6 mg C W -1 when the material was modified with silver. Although the first step of degradation involves only the photochemical process related to the loss of the chlorine and hydrogen atoms. This cyclization reaction leads to the formation of intermediate, which degradation is facilitated by the modified material

  11. Polythiophene thin films electrochemically deposited on sol-gel based TiO2 for photovoltaic applications

    International Nuclear Information System (INIS)

    Valaski, R.; Yamamoto, N.A.D.; Canestraro, C.D.; Micaroni, L.; Mello, R.M.Q.; Quirino, W.G.; Legani, C.; Achete, C.A.; Roman, L.S.; Cremona, M.

    2010-01-01

    In this work, the influence of titanium dioxide (TiO 2 ) thin films on the efficiency of organic photovoltaic devices based on electrochemically synthesized polythiophene (PT) was investigated. TiO 2 films were produced by sol-gel methods with controlled thickness. The best TiO 2 annealing condition was determined through the investigation of the temperature influence on the electron charge mobility and resistivity in a range between 723 K and 923 K. The PT films were produced by chronoamperometric method in a 3-electrode cell under a controlled atmosphere. High quality PT films were produced onto 40 nm thick TiO 2 layer previously deposited onto fluorine doped tin oxide (FTO) substrate. The morphology of PT films grown on both substrates and its strong influence on the device performance and PT minimum thickness were also investigated. The maximum external quantum efficiency (IPCE) reached was 9% under monochromatic irradiation (λ = 610 nm; 1 W/m 2 ) that is three orders of magnitude higher than that presented by PT-homolayer devices with similar PT thickness. In addition, the open-circuit voltage (V oc ) was about 700 mV and the short-circuit current density (J sc ) was 0.03 A/m 2 (λ = 610 nm; 7 W/m 2 ). However, as for the PT-homolayer also the TiO 2 /PT based devices are characterized by antibatic response when illuminated through FTO. Finally, the Fill Factor (FF) of these devices is low (25%), indicating that the series resistance (R s ), which is strongly dependent of the PT thickness, is too large. This large R s value is compensated by TiO 2 /PT interface morphology and by FTO/TiO 2 and TiO 2 /PT interface phenomena producing preferential paths in which the internal electrical field is higher, improving the device efficiency.

  12. Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

    OpenAIRE

    Duarte, D. A.; Massi, M.; da Silva Sobrinho, A. S.

    2014-01-01

    In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototype...

  13. Structural Modification of Sol-Gel Synthesized V2O5 and TiO2 Thin Films with/without Erbium Doping

    Directory of Open Access Journals (Sweden)

    Fatma Pınar Gökdemir

    2014-01-01

    Full Text Available Comparative work of with/without erbium- (Er- doped vanadium pentoxide (V2O5 and titanium dioxide (TiO2 thin films were carried out via sol-gel technique by dissolving erbium (III nitrate pentahydrate (Er(NO33·5H2O in vanadium (V oxoisopropoxide (OV[OCH(CH32]3 and titanium (IV isopropoxide (Ti[OCH(CH32]4. Effect of Er doping was traced by Fourier transform IR (FTIR, thermogravimetric/differential thermal (TG/DTA, and photoluminescence measurements. UV-Vis transmission/absorption measurement indicated a blue shift upon Er doping in V2O5 film due to the softening of V=O bond while appearance of typical absorption peaks in Er-doped TiO2 film. Granule size of the films increased (reduced upon Er substitution on host material compared to undoped V2O5 and TiO2 films, respectively.

  14. Synthesis, characterization and application of Co doped TiO2 multilayer thin films

    Science.gov (United States)

    Khan, M. I.

    2018-06-01

    To use the visible portion of solar light, 2% cobalt doped TiO2 (Co: TiO2) multilayer thin films having 1, 2, 3 and 4 stacked layers have been deposited on FTO substrates using spray pyrolysis technique. XRD results show that 1 and 2 layers of films have anatase phase. Brookite phase has been appeared at the 3 and 4 layered films. The average grain size of 1, 2, 3 and 4 layers of films are 14.4, 23.5, 29.7 and 33.6 nm respectively. UV-Vis results show that 4th layer film has high absorption in the visible region. The calculated Eg of 1, 2, 3 and 4 layers is 3.54, 3.42, 3.30 and 3.03 eV respectively. The calculated average sheet resistivity of 1, 2, 3 and 4 layers of films is 7.68 × 104, 4.54 × 104, 8.85 × 103 and 7.95 × 102 (ohm-m) respectively, according to four point probe technique. Solar simulator results show that highest solar conversion efficiency (5.6%) has been obtained by using 3 stacked layers photoanode. This new structure in the form of stack layers provides a way to improve the efficiency of optoelectronic devices.

  15. The photocatalytic application and regeneration of anatase thin films with embedded commercial TiO2 particles deposited on glass microrods

    International Nuclear Information System (INIS)

    Medina-Valtierra, Jorge; Garcia-Servin, Josafat; Frausto-Reyes, Claudio; Calixto, Sergio

    2006-01-01

    Anatase thin films ( 2 were prepared by sol-gel method. TiO 2 -anatase thin films were deposited on a fiberglass substrate and then ground to obtain glass microrods containing the composite films. The film structure was characterized using Raman spectroscopy, atomic absorption and UV-vis spectrophotometry, and atomic force microscopy. The photocatalytic activity of the composite films, calcined at 450 deg. C, and the regeneration of the activity under the same experimental conditions, were assessed using gas chromatography to study the photodegradation of phenol, an industrial pollutant, in water under 365 nm irradiation. The film with 15.0 wt.% of P25 TiO 2 was found to be more photoactive (54 ppm of degraded phenol at 6 h of illumination) than the other ones

  16. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    Science.gov (United States)

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-12-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  17. Preparation and optical properties of mesoporous TiO2 thin films by a two-step sol-gel technique

    International Nuclear Information System (INIS)

    Kartini, I.; Lu, G.Q.; Meredith, P.; Zhao, X.S.

    2002-01-01

    This paper concerns the preparation of mesoporous titania nanopowders and thin films for use in next generation photoelectrochemical solar cells. We have recently developed a novel method for preparing mesoporous TiO 2 powders using a Two-Step Sol-gel method (TSS). These materials have crystalline domains characteristic of anatase. The first step of the process involves the hydrolysis of titanium isopropoxide in a basic aqueous solution mediated by neutral surfactant. The solid product resulting from Step-1 is then treated in acidified ethanol solution containing a titanium precursor to yield anatase TiO 2 . The resultant powder exhibits a high surface area and large pore volume with uniform mesopores. Slurries made from the resultant powder of Steps 1 and 2 have been used to produce thin titania films on glass slides. The optical and structural properties of these films have been compared to the films made of a commercial titania (Degussa P25, BASF). We will discuss these properties with respect to the possible use of such mesoporous titania films as the wide band gap semiconductor in dye-sensitized nanocrystalline TiO 2 solar cells

  18. Influence of Pore Size on the Optical and Electrical Properties of Screen Printed TiO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Dinfa Luka Domtau

    2016-01-01

    Full Text Available Influence of pore size on the optical and electrical properties of TiO2 thin films was studied. TiO2 thin films with different weight percentages (wt% of carbon black were deposited by screen printing method on fluorine doped tin oxide (FTO coated on glass substrate. Carbon black decomposed on annealing and artificial pores were created in the films. All the films were 3.2 µm thick as measured by a surface profiler. UV-VIS-NIR spectrophotometer was used to study transmittance and reflectance spectra of the films in the photon wavelength of 300–900 nm while absorbance was studied in the range of 350–900 nm. Band gaps and refractive index of the films were studied using the spectra. Reflectance, absorbance, and refractive index were found to increase with concentrations of carbon black. There was no significant variation in band gaps of films with change in carbon black concentrations. Transmittance reduced as the concentration of carbon black in TiO2 increased (i.e., increase in pore size. Currents and voltages (I-V characteristics of the films were measured by a 4-point probe. Resistivity (ρ and conductivity (σ of the films were computed from the I-V values. It was observed that resistivity increased with carbon black concentrations while conductivity decreased as the pore size of the films increased.

  19. Intrinsic Photocatalytic Assessment of Reactively Sputtered TiO2 Films

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Driessen, Rick Theodorus; Driessen, Rick T.; Ogieglo, Wojciech; Lammertink, Rob G.H.

    2015-01-01

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during

  20. The effect of aeration and solar intensity power on photocatalytic degradation of textile industrial wastewater using TiO2 thin film

    International Nuclear Information System (INIS)

    Abu Kassim, N.F.; Ku Hamid, K.H.; Azizan, A.

    2006-01-01

    Solar photo catalytic degradation of the textile industry wastewater using TiO 2 thin films was studied. This experiment was performed to investigate the effect of aeration and solar intensity power on decreasing of Chemical Oxygen Demand (COD). A serpentine flow photo catalytic reactor was developed for this purpose. TiO 2 thin films photo catalyst supported on the stainless steel 304 substrates were prepared using sol-gel dip coating method. The results of thin films were characterized by Scanning Electron Microscopy (SEM) and X-Ray Diffractometer (XRD). XRD result showed that the prepared thin films gave the anatase crystallite formation whilst SEM demonstrated the macro pores were formed. Finally, the aeration and solar intensity power factors are considered to be responsible for the photo catalytic degradation. (Author)

  1. Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

    Directory of Open Access Journals (Sweden)

    D. A. Duarte

    2014-01-01

    Full Text Available In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototypes was investigated by current-voltage relations measured under illuminated and dark conditions. The results indicate that, during the film deposition, the control of the oxidation processes of the nitride layers plays a fundamental role for an effective incorporation of substitutional nitrogen in the film structure and cells built with nitrogen-doped TiO2 have higher short-circuit photocurrent in relation to that obtained with conventional DSSCs. On the other hand, DSSCs built with nondoped TiO2 have higher open-circuit voltage. These experimental observations indicate that the incorporation of nitrogen in the TiO2 lattice increases simultaneously the processes of generation and destruction of electric current.

  2. SURFACE MODIFICATION OF SEMICONDUCTOR THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY Cu-ELECTRODEPOSITION

    Directory of Open Access Journals (Sweden)

    Fitria Rahmawati

    2010-06-01

    Full Text Available Surface modification of graphite/TiO2 has been done by mean of Cu electrodeposition. This research aims to study the effect of Cu electrodeposition on photocatalytic enhancing of TiO2. Electrodeposition has been done using CuSO4 0,4 M as the electrolyte at controlled current. The XRD pattern of modified TiO2 thin film on graphite substrate exhibited new peaks at 2θ= 43-44o and 2θ= 50-51o that have been identified as Cu with crystal cubic system, face-centered crystal lattice and crystallite size of 26-30 nm. CTABr still remains in the material as impurities. Meanwhile, based on morphological analysis, Cu particles are dissipated in the pore of thin film. Graphite/TiO2/Cu has higher photoconversion efficiency than graphite/TiO2.   Keywords: semiconductor, graphite/TiO2, Cu electrodeposition

  3. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    Science.gov (United States)

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

  4. Strategies to prepare TiO2 thin films, doped with transition metal ions, that exhibit specific physicochemical properties to support osteoblast cell adhesion and proliferation

    International Nuclear Information System (INIS)

    Dhayal, Marshal; Kapoor, Renu; Sistla, Pavana Goury; Pandey, Ravi Ranjan; Kar, Satabisha; Saini, Krishan Kumar; Pande, Gopal

    2014-01-01

    Metal ion doped titanium oxide (TiO 2 ) thin films, as bioactive coatings on metal or other implantable materials, can be used as surfaces for studying the cell biological properties of osteogenic and other cell types. Bulk crystallite phase distribution and surface carbon–oxygen constitution of thin films, play an important role in determining the biological responses of cells that come in their contact. Here we present a strategy to control the polarity of atomic interactions between the dopant metal and TiO 2 molecules and obtain surfaces with smaller crystallite phases and optimal surface carbon–oxygen composition to support the maximum proliferation and adhesion of osteoblast cells. Our results suggest that surfaces, in which atomic interactions between the dopant metals and TiO 2 were less polar, could support better adhesion, spreading and proliferation of cells. - Highlights: • Electrochemical properties of dopants control the nature of TiO 2 thin films. • A model explains the correlation of dopant properties and behaviour of TiO 2 films. • Dopants with less polar interaction with TiO 2 exhibit better biological activity

  5. An in-situ real-time optical fiber sensor based on surface plasmon resonance for monitoring the growth of TiO2 thin films.

    Science.gov (United States)

    Tsao, Yu-Chia; Tsai, Woo-Hu; Shih, Wen-Ching; Wu, Mu-Shiang

    2013-07-23

    An optical fiber sensor based on surface plasmon resonance (SPR) is proposed for monitoring the thickness of deposited nano-thin films. A side-polished multimode SPR optical fiber sensor with an 850 nm-LD is used as the transducing element for real-time monitoring of the deposited TiO2 thin films. The SPR optical fiber sensor was installed in the TiO2 sputtering system in order to measure the thickness of the deposited sample during TiO2 deposition. The SPR response declined in real-time in relation to the growth of the thickness of the TiO2 thin film. Our results show the same trend of the SPR response in real-time and in spectra taken before and after deposition. The SPR transmitted intensity changes by approximately 18.76% corresponding to 50 nm of deposited TiO2 thin film. We have shown that optical fiber sensors utilizing SPR have the potential for real-time monitoring of the SPR technology of nanometer film thickness. The compact size of the SPR fiber sensor enables it to be positioned inside the deposition chamber, and it could thus measure the film thickness directly in real-time. This technology also has potential application for monitoring the deposition of other materials. Moreover, in-situ real-time SPR optical fiber sensor technology is in inexpensive, disposable technique that has anti-interference properties, and the potential to enable on-line monitoring and monitoring of organic coatings.

  6. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  7. Studies on the performance of TiO2 thin films as protective layer to chlorophyll in Ocimum tenuiflorum L from UV radiation

    International Nuclear Information System (INIS)

    Malliga, P.; Selvi, B. Karunai; Pandiarajan, J.; Prithivikumaran, N.; Neyvasagam, K.

    2015-01-01

    Thin films of TiO 2 were prepared on glass substrates using sol-gel dip coating technique. The films with 10 coatings were prepared and annealed at temperatures 350°C, 450°C and 550°C for 1 hour in muffle furnace. The annealed films were characterized by X – Ray diffraction (XRD), UV – Visible, AFM, Field Effect Scanning Electron Microscopy (FESEM) and EDAX studies. Chlorophyll has many health benefits due to its structural similarity to human blood and its good chelating ability. It has antimutagenic and anticarcinogenic properties. UV light impairs photosynthesis and reduces size, productivity, and quality in many of the crop plant species. Increased exposure of UV light reduces chlorophyll contents a, b and total content in plants. Titanium Dioxide (TiO 2 ) is a wide band gap semiconductor and efficient light harvester. TiO 2 has strong UltraViolet (UV) light absorbing capability. Here, we have studied the performance of TiO 2 thin films as a protective layer to the chlorophyll contents present in medicinal plant, tulsi (Ocimum tenuiflorum L) from UV radiation. The study reveals that crystallite size increases, transmittance decreases and chlorophyll contents increases with increase in annealing temperature. This study showed that TiO 2 thin films are good absorber of UV light and protect the chlorophyll contents a, b and total content in medicinal plants

  8. Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

    International Nuclear Information System (INIS)

    Wan, L.; Li, J.F.; Feng, J.Y.; Sun, W.; Mao, Z.Q.

    2007-01-01

    In order to improve the photocatalytic activity, N-doped titanium oxide (TiO 2 ) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO 2 phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO 2 lattice to form Ti-O-N bonds. UV-vis spectra revealed the N-doped TiO 2 film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 deg. C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO 2 . The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO 2 films in the range of visible light

  9. Contribution of thickness dependent void fraction and TiSixOy interlayer to the optical properties of amorphous TiO2 thin films

    International Nuclear Information System (INIS)

    Zhang, Fan; Zhang, Rong-Jun; Zheng, Yu-Xiang; Xu, Zi-Jie; Zhang, Dong-Xu; Wang, Zi-Yi; Yu, Xiang; Chen, Liang-Yao

    2013-01-01

    The optical properties of TiO 2 thin films prepared by electron beam evaporation were studied by spectroscopic ellipsometry and analyzed quantitatively using effective medium approximation theory and an effective series capacitance model. The refractive indices of TiO 2 are essentially constant and approach to those of bulk TiO 2 for films thicker than 40 nm, but drop sharply with a decrease in thickness from 40 to 5.5 nm. This phenomenon can be interpreted quantitatively by the thickness dependence of the void fraction and interfacial oxide region. The optical band gaps calculated from Tauc law increase with an increase of film thickness, and can be attributed to the contribution of disorder effect. - Highlights: • Amorphous TiO 2 thin films fabricated on Si substrate by electron beam evaporation • The refractive index and band gap are obtained from spectroscopic ellipsometry. • The refractive index decreases with decreasing film thickness. • Effective medium approximation theory and effective series capacitance model introduced • A band gap increases gradually with an increase in film thickness

  10. Effect of N_2 flow rate on the properties of N doped TiO_2 films deposited by DC coupled RF magnetron sputtering

    International Nuclear Information System (INIS)

    Peng, Shou; Yang, Yong; Li, Gang; Jiang, Jiwen; Jin, Kewu; Yao, TingTing; Zhang, Kuanxiang; Cao, Xin; Wang, Yun; Xu, Genbao

    2016-01-01

    N doped TiO_2 films were deposited on glass substrates at room temperature using DC coupled RF magnetron sputtering with a TiO_2 ceramic target. The influences of N_2 flow rate on the deposition rate, crystal structure, chemical composition and band gap of the deposited films were investigated by Optical profiler, X-ray diffraction, X-ray photoelectron spectroscope and ultraviolet-visible spectrophotometer. The film growth rate gradually decreased with increasing N_2 flow rate. As N_2 flow rate increased, the crystallization of the films deteriorated, and the films tended to form amorphous structure. XPS analysis revealed that N dopant atoms were added at the substitutional sites into TiO_2 lattice structure. FE-SEM results showed that the grain size of the film decreased and the crystallinity degraded as N_2 flow rate increases. In addition, N doping caused an obvious red shift in the optical absorption edge. - Highlights: • N doped TiO_2 films were deposited by DC coupled RF magnetron reactive sputtering. • As N_2 flow rate increases, the crystallization of the deposited films degrades. • The higher N_2 flow rate is beneficial to form more substituted N in the film. • N doping causes an obvious red shift in the absorption wavelength.

  11. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  12. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  13. Growth and characterization of nitrogen-doped TiO2 thin films prepared by reactive pulsed laser deposition

    International Nuclear Information System (INIS)

    Sauthier, G.; Ferrer, F.J.; Figueras, A.; Gyoergy, E.

    2010-01-01

    Nitrogen-doped titanium dioxide (TiO 2 ) thin films were grown on (001) SiO 2 substrates by reactive pulsed laser deposition. A KrF* excimer laser source (λ = 248 nm, τ FWHM ≅ 10 ns, ν = 10 Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO 2 . The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500 nm wavelength was observed.

  14. Influences of the iron ion (Fe3+)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

    International Nuclear Information System (INIS)

    Ben Naceur, J.; Mechiakh, R.; Bousbih, F.; Chtourou, R.

    2011-01-01

    Titanium dioxide (TiO 2 ) thin films doping of various iron ion (Fe 3+ ) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO 2 thin films comprised only the anatase TiO 2 , but the crystallinity decreased when the Fe 3+ content increased from 0% to 20%. During the Fe 3+ addition to 20%, the phase of TiO 2 thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe 3+ content.

  15. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  16. Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

  17. Influence of annealing on X-ray radiation sensing properties of TiO2 thin film

    Science.gov (United States)

    Sarma, M. P.; Kalita, J. M.; Wary, G.

    2018-03-01

    A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333 K, 363 K, 393 K, 473 K, and 573 K for 1 hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26 eV to 3.10 eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2 V‒1.0 V). At higher bias voltage (>1.0 V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.

  18. Metal-to-Insulator Transition in Anatase TiO2 Thin Films Induced by Growth Rate Modulation

    International Nuclear Information System (INIS)

    Tachikawa, Takashi

    2012-01-01

    We demonstrate control of the carrier density of single phase anatase TiO 2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO 2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

  19. Hydrogen incorporation by plasma treatment gives mesoporous black TiO 2 thin films with visible photoelectrochemical water oxidation activity

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Syed Z.; Reed, Allen; Nagpure, Suraj; Wanninayake, Namal; Browning, James F.; Strzalka, Joseph; Kim, Doo Young; Rankin, Stephen E.

    2018-05-01

    In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H2 plasma treatment makes TiO2 films black, with broad-spectrum enhancement of visible light absorption, and XPS analysis shows peak for Ti3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO2 is accompanied by significant hydrogen uptake and not just Ti3+ generation or surface disordering.

  20. Enhanced Optical and Electrical Properties of TiO_2 Buffered IGZO/TiO_2 Bi-Layered Films

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Kim, Daeil

    2016-01-01

    In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO_2-deposited glass substrate to determine the effect of the thickness of a thin TiO_2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO_2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO_2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO_2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO_2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

  1. Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M. I. B.

    2002-01-01

    Full Text Available In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

  2. Effects of LP-MOCVD prepared TiO2 thin films on the in vitro behavior of gingival fibroblasts

    International Nuclear Information System (INIS)

    Cimpean, Anisoara; Popescu, Simona; Ciofrangeanu, Cristina M.; Gleizes, Alain N.

    2011-01-01

    We report on the in vitro response of human gingival fibroblasts (HGF-1 cell line) to various thin films of titanium dioxide (TiO 2 ) deposited on titanium (Ti) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The aim was to study the influence of film structural parameters on the cell behavior comparatively with a native-oxide covered titanium specimen, this objective being topical and interesting for materials applications in implantology. HGF-1 cells were cultured on three LP-MOCVD prepared thin films of TiO 2 differentiated by their thickness, roughness, transversal morphology, allotropic composition and wettability, and on a native-oxide covered Ti substrate. Besides traditional tests of cell viability and morphology, the biocompatibility of these materials was evaluated by fibronectin immunostaining, assessment of cell proliferation status and the zymographic evaluation of gelatinolytic activities specific to matrix metalloproteinases secreted by cells grown in contact with studied specimens. The analyzed surfaces proved to influence fibronectin fibril assembly, cell proliferation and capacity to degrade extracellular matrix without considerably affecting cell viability and morphology. The MOCVD of TiO 2 proved effective in positively modifying titanium surface for medical applications. Surface properties playing a crucial role for cell behavior were the wettability and, secondarily, the roughness, HGF-1 cells preferring a moderately rough and wettable TiO 2 coating.

  3. Electrochemically synthesized visible light absorbing vertically aligned N-doped TiO2 nanotube array films

    International Nuclear Information System (INIS)

    Antony, Rajini P.; Mathews, Tom; Ajikumar, P.K.; Krishna, D. Nandagopala; Dash, S.; Tyagi, A.K.

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► Single step electrochemical synthesis of N-doped TiO 2 nanotube array films. ► Effective substitutional N-doping achieved. ► Different N-concentrations were achieved by varying the N-precursor concentration in the electrolyte. ► Visible light absorption observed at high N-doping. -- Abstract: Visible light absorbing vertically aligned N-doped anatase nanotube array thin films were synthesized by anodizing Ti foils in ethylene glycol + NH 4 F + water mixture containing urea as nitrogen source. Different nitrogen concentrations were achieved by varying the urea content in the electrolyte. The structure, morphology, composition and optical band gap of the nanotube arrays were determined by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy (XPS) and diffuse reflectance spectroscopy, respectively. The substitution of O 2− ions by N 3− ions in the anion sublattice as well as the formulae of the doped samples was confirmed from the results of XPS. The optical band gap of the nanotube arrays was found to decrease with N-concentration. The sample with the highest concentration corresponding to the formula TiO 1.83 N 0.14 showed two regions in the Tauc's plot indicating the presence of interband states.

  4. Combination of short-length TiO_2 nanorod arrays and compact PbS quantum-dot thin films for efficient solid-state quantum-dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Zhang, Zhengguo; Shi, Chengwu; Chen, Junjun; Xiao, Guannan; Li, Long

    2017-01-01

    Graphical abstract: The TiO_2 nanorod array with the length of 600 nm, the diameter of 20 nm, the areal density of 500 μm"−"2 was successfully prepared. The compact PbS quantum-dot thin film was firstly obtained on the TiO_2 nanorod array by spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol. The photoelectric conversion efficiency (PCE) of the compact PbS quantum-dot thin film sensitized solar cells achieved 4.10% using spiro-OMeTAD as a hole transporting layer, while the PCE of the PbS quantum-dot sensitized solar cells was only 0.54%. - Highlights: • Preparation of TiO_2 nanorod arrays with the length of 600 nm, diameter of 20 nm. • The compact PbS QD thin film and short-length TiO_2 nanorod array were combined. • EDT addition improved PbS nanoparticle coverage and photovoltaic performance. • The compact PbS QD thin film sensitized solar cell achieved the PCE of 4.10%. - Abstract: Considering the balance of the hole diffusion length and the loading quantity of quantum-dots, the rutile TiO_2 nanorod array with the length of 600 nm, the diameter of 20 nm, and the areal density of 500 μm"−"2 is successfully prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 105 min. The compact PbS quantum-dot thin film on the TiO_2 nanorod array is firstly obtained by the spin-coating-assisted successive ionic layer absorption and reaction with using 1,2-ethanedithiol (EDT). The result reveals that the strong interaction between lead and EDT is very important to control the crystallite size of PbS quantum-dots and obtain the compact PbS quantum-dot thin film on the TiO_2 nanorod array. The all solid-state sensitized solar cell with the combination of the short-length, high-density TiO_2 nanorod array and the compact PbS quantum-dot thin film achieves the photoelectric conversion efficiency of 4.10%, along with an open

  5. Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

    International Nuclear Information System (INIS)

    Wang Bin; Dai Gang; Zhang Hongchao; Ni Xiaowu; Shen Zhonghua; Lu Jian

    2011-01-01

    In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO 2 /SiO 2 films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.

  6. On the optical, structural, and morphological properties of ZrO2 and TiO2 dip-coated thin films supported on glass substrates

    International Nuclear Information System (INIS)

    Cueto, Luisa F.; Sanchez, Enrique; Torres-Martinez, Leticia M.; Hirata, Gustavo A.

    2005-01-01

    This article reports the optical and morphological properties of dip-coated TiO 2 and ZrO 2 thin films on soda-lime glass substrates by metal-organic decomposition (MOD) of titanium IV and zirconium IV acetylacetonates respectively. Thermogravimetric and differential thermal analysis (DTA-TG) were performed on the precursor powders, indicating pure TiO 2 anatase and tetragonal ZrO 2 phase formation. Phase crystallization processes took place in the range of 300-500 deg. C for anatase and of 410-500 deg. C for ZrO 2 . Fourier Transform Infrared Spectroscopy (FT-IR) was used to confirm precursor bidentate ligand formation with keno-enolic equilibrium character. Deposited films were heated at different temperatures, and their structural, optical and morphological properties were studied by grazing-incidence X-ray Diffraction (GIXRD) and X-Ray Photoelectron Spectroscopy (XPS), Ultraviolet Visible Spectroscopy (UV-Vis), and Atomic Force Microscopy (AFM) respectively. Film thinning and crystalline phase formation were enhanced with increasing temperature upon chelate decomposition. The optimum annealing temperature for both pure anatase TiO 2 and tetragonal ZrO 2 thin films was found to be 500 deg. C since solid volume fraction increased with temperature and film refractive index values approached those of pure anatase and tetragonal zirconia. Conditions for clean stoichiometric film formation with an average roughness value of 2 nm are discussed in terms of material binding energies indicated by XPS analyses, refractive index and solid volume fraction obtained indirectly by UV-Vis spectra, and crystalline peak identification provided by GIXRD

  7. Origin of visible-light sensitivity in N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2007-01-01

    We report on visible-light sensitivity in N-doped TiO 2 (TiO 2 :N) films that were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined by X-ray photoelectron spectroscopy measurements. From transmission electron microscopic observations and optical absorption measurements, yellow-colored TiO 2 :N samples showed an enhanced granular structure and strong absorption in the visible-light region. Photoelectron spectroscopy in air measurements showed a noticeable decrease in ionization energy of TiO 2 by the N doping. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. The pronounced 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing of TiO 2 by mixing with the O 2p valence band. Therefore, this localized intraband is probably one origin of visible-light sensitivity in TiO 2 :N

  8. Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

    Science.gov (United States)

    Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

    2015-04-01

    The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

  9. Sol-Gel TiO2 thin films sensitized with the mulberry pigment cyanidin

    Directory of Open Access Journals (Sweden)

    Emerson Henrique de Faria

    2007-12-01

    Full Text Available TiO2 films have various applications, among them solar cells and photodegradation of pollutants. In this study, we investigated TiO2 films functionalized with the organic dye cyanidin extracted from black mulberry (Morus nigra. The TiO2 was functionalized by the sol-gel method and the film was deposited on glass substrates by dip-coating. Our aim was to investigate the interaction between the semiconductor and the dye, as well as the influence of the velocity and number of deposits on the characteristics of the film. Using ultraviolet-visible spectroscopy, we observed a shift from the maximum absorption band at 545 nm for the dye’s ethanol solution to 595 nm for the film, indicating interaction of the cyanidin with the TiO2. The absorption spectra in the infrared region of the functionalized TiO2 particles showed bands characteristic of the oxide and indicated their interaction with the dye. Using profilometry and m-line techniques, we found that the films presented thicknesses in the order of 100 nm. A SEM analysis confirmed the high density of the films.

  10. Photocatalytic performance of Sn-doped and undoped TiO2 nanostructured thin films under UV and vis-lights

    International Nuclear Information System (INIS)

    Arpac, E.; Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, Nadir; Sayilkan, H.

    2007-01-01

    Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without solvent at 200 deg. C in 1 h. Nanostructure-TiO 2 based thin films have been prepared on glass substrate by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, SEM, BET and UV-vis-NIR techniques. The photocatalytic performance of the films were tested for degradation of Malachite Green dye in solution under UV and vis-lights. The results showed that (a) hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, (b) the coated surfaces have nearly super-hydrophilic properties and (c) the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film

  11. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

    Science.gov (United States)

    Liau, Leo Chau-Kuang; Lin, Yun-Guo

    2015-01-01

    Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

  12. Structural and electrical characteristics of ZrO2-TiO2 thin films by sol-gel method

    International Nuclear Information System (INIS)

    Hsu, Cheng-Hsing; Tseng, Ching-Fang; Lai, Chun-Hung; Tung, Hsin-Han; Lin, Shih-Yao

    2010-01-01

    In this paper, we investigated electrical properties and microstructures of ZrTiO 4 (ZrO 2 -TiO 2 ) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO 4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 x 10 -6 A/cm 2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO 4 , ReRAM based on ZrTiO 4 shows promise for future nonvolatile memory applications.

  13. Superhydrophobic ceramic coatings enabled by phase-separated nanostructured composite TiO2–Cu2O thin films

    International Nuclear Information System (INIS)

    Aytug, Tolga; Paranthaman, Parans M; Simpson, John T; Christen, David K; Bogorin, Daniela F; Mathis, John E

    2014-01-01

    By exploiting phase-separation in oxide materials, we present a simple and potentially low-cost approach to create exceptional superhydrophobicity in thin-film based coatings. By selecting the TiO 2 –Cu 2 O system and depositing through magnetron sputtering onto single crystal and metal templates, we demonstrate growth of nanostructured, chemically phase-segregated composite films. These coatings, after appropriate chemical surface modification, demonstrate a robust, non-wetting Cassie–Baxter state and yield an exceptional superhydrophobic performance, with water droplet contact angles reaching to ∼172° and sliding angles <1°. As an added benefit, despite the photo-active nature of TiO 2 , the chemically coated composite film surfaces display UV stability and retain superhydrophobic attributes even after exposure to UV (275 nm) radiation for an extended period of time. The present approach could benefit a variety of outdoor applications of superhydrophobic coatings, especially for those where exposure to extreme atmospheric conditions is required. (papers)

  14. Incorporation of Kojic Acid-Azo Dyes on TiO2 Thin Films for Dye Sensitized Solar Cells Applications

    Directory of Open Access Journals (Sweden)

    Carolynne Zie Wei Sie

    2017-01-01

    Full Text Available Sensitization of heavy metal free organic dyes onto TiO2 thin films has gained much attention in dye sensitized solar cells (DSSCs. A series of new kojic acid based organic dyes KA1–4 were synthesized via nucleophilic substitution of azobenzene bearing different vinyl chains A1–4 with kojyl chloride 4. Azo dyes KA1–4 were characterized for photophysical properties employing absorption spectrometry and photovoltaic characteristic in TiO2 thin film. The presence of vinyl chain in A1–4 improved the photovoltaic performance from 0.20 to 0.60%. The introduction of kojic acid obtained from sago waste further increases the efficiency to 0.82–1.54%. Based on photovoltaic performance, KA4 achieved the highest solar to electrical energy conversion efficiency (η = 1.54% in the series.

  15. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  16. Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

    Science.gov (United States)

    Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

    2018-04-01

    In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

  17. Pt Catalyst Supported within TiO2 Mesoporous Films for Oxygen Reduction Reaction

    International Nuclear Information System (INIS)

    Huang, Dekang; Zhang, Bingyan; Bai, Jie; Zhang, Yibo; Wittstock, Gunther; Wang, Mingkui; Shen, Yan

    2014-01-01

    In this study, dispersed Pt nanoparticles into mesoporous TiO 2 thin films are fabricated by a facile electrochemical deposition method as electro-catalysts for oxygen reduction reaction. The mesoporous TiO 2 thin films coated on the fluorine-doped tin oxide glass by screen printing allow a facile transport of reactants and products. The structural properties of the resulted Pt/TiO 2 electrode are evaluated by field emission scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy. Cyclic voltammetry measurements are performed to study the electrochemical properties of the Pt/TiO 2 electrode. Further study demonstrates the stability of the Pt catalyst supported within TiO 2 mesoporous films for the oxygen reduction reaction

  18. A Micro Oxygen Sensor Based on a Nano Sol-Gel TiO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Hairong Wang

    2014-09-01

    Full Text Available An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed on a silicon substrate. The nanostructured titania thin films for O2 sensors were prepared by the sol-gel process and became anatase after heat treatment. A sandwich TiO2 square board with an area of 350 μm × 350 μm was defined by both wet etching and dry etching processes and the wet one was applied in the final process due to its advantages of easy control for the final structure. A pair of 150 nm Pt micro interdigitated electrodes with 50 nm Ti buffer layer was fabricated on the board by a lift-off process. The sensor chip was tested in a furnace with changing the O2 concentration from 1.0% to 20% by monitoring its electrical resistance. Results showed that after several testing cycles the sensor’s output becomes stable, and its sensitivity is 0.054 with deviation 2.65 × 10−4 and hysteresis is 8.5%. Due to its simple fabrication process, the sensor has potential for application in environmental monitoring, where lower power consumption and small size are required.

  19. Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

    Directory of Open Access Journals (Sweden)

    M. Stiller

    2016-12-01

    Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

  20. Manufacturing and investigation of surface morphology and optical properties of composite thin films reinforced by TiO2, Bi2O3 and SiO2 nanoparticles

    Science.gov (United States)

    Jarka, Paweł; Tański, Tomasz; Matysiak, Wiktor; Krzemiński, Łukasz; Hajduk, Barbara; Bilewicz, Marcin

    2017-12-01

    The aim of submitted paper is to present influence of manufacturing parameters on optical properties and surface morphology of composite materials with a polymer matrix reinforced by TiO2 and SiO2 and Bi2O3 nanoparticles. The novelty proposed by the authors is the use of TiO2 and SiO2 and Bi2O3 nanoparticles simultaneously in polymeric matrix. This allows using the combined effect of nanoparticles to a result composite material. The thin films of composite material were prepared by using spin-coating method with various spinning rates from solutions of different concentration of nanoparticles. In order to prepare the spinning solution polymer, Poly(methyl methacrylate) (PMMA) was used as a matrix. The reinforcing phase was the mixture of the nanoparticles of SiO2, TiO2 and B2O3. In order to identify the surface morphology of using thin films and arrangement of the reinforcing phase Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used. In order to study the optical properties of the obtained thin films, the thin films of composites was subjected to an ellipsometry analysis. The measurements of absorbance of the obtained materials, from which the value of the band gap width was specified, were carried out using the UV/VIS spectroscopy. The optical properties of obtain composite thin films depend not only on the individual components used, but also on the morphology and the interfacial characteristics. Controlling the participation of three kinds of nanoparticles of different sizes and optical parameters allows to obtaining the most optimal optical properties of nanocomposites and also controlling the deposition parameters allows to obtaining the most optimal surface morphology of nanocomposites.

  1. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Lewis, S.; Haynes, V.; Wheeler-Jones, R.; Sly, J.; Perks, R.M.; Piccirillo, L.

    2010-01-01

    Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO 2 and Al 2 O 3 nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Using the zeta potential parameter, it was found that the stabilities of the toluene/oxide nanoparticle suspensions were 7.7 mV and 19.4 mV respectively, meaning that the suspension was not stable. However, when the TiO 2 and Al 2 O 3 nanoparticles were encapsulated in methanol the zeta potential parameter was 31.9 mV and 39.2 mV respectively. Therefore, the nanoparticle suspension was stable. This method improved the surface roughness of PMMA based nanocomposite thin films by a factor of 6.6 and 6.4, when TiO 2 and Al 2 O 3 were suspended in methanol before being dispersed into the PMMA polymer.

  2. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    International Nuclear Information System (INIS)

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-01-01

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 εo and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane

  3. Aerosol deposition of Ba0.8Sr0.2TiO3 thin films

    Directory of Open Access Journals (Sweden)

    Branković Zorica

    2009-01-01

    Full Text Available In this work we optimized conditions for aerosol deposition of homogeneous, nanograined, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0 or Si covered by platinum (Pt (1 1 1 /Ti/SiO2/Si. Investigation showed that the best films were obtained at substrate temperature of 85ºC. After deposition films were slowly heated up to 650ºC, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crackfree, and smooth with rms roughness lower than 4 nm for both substrates.

  4. Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

    Science.gov (United States)

    Cheng, Xuemei; Gotoh, Kazuhiro; Nakagawa, Yoshihiko; Usami, Noritaka

    2018-06-01

    Electrical and structural properties of TiO2 thin films deposited at room temperature by reactive DC sputtering have been investigated on three different substrates: high resistivity (>1000 Ω cm) float zone Si(1 1 1), float zone Si(1 0 0) and alkali free glass. As-deposited TiO2 films on glass substrate showed extremely high resistivity of (∼5.5 × 103 Ω cm). In contrast, lower resistivities of ∼2 Ω cm and ∼5 Ω cm were obtained for films on Si(1 1 1) and Si(1 0 0), respectively. The as-deposited films were found to be oxygen-rich amorphous TiO2 for all the substrates as evidenced by X-ray photoemission spectroscopy and X-ray diffraction. Subsequent annealing led to appearance of anatase TiO2 on Si but not on glass. The surface of as-deposited TiO2 on Si was found to be rougher than that on glass. These results suggest that the big difference of electrical resistivity of TiO2 would be related with existence of more anatase nuclei forming on crystalline substrates, which is consistent with the theory of charged clusters that smaller clusters tend to adopt the substrate structure.

  5. Properties of Sn-doped TiO2 nanotubes fabricated by anodization of co-sputtered Ti–Sn thin films

    International Nuclear Information System (INIS)

    Kyeremateng, Nana Amponsah; Hornebecq, Virginie; Knauth, Philippe; Djenizian, Thierry

    2012-01-01

    Self-organized Sn-doped TiO 2 nanotubes (nts) were fabricated for the first time, by anodization of co-sputtered Ti and Sn thin films. This nanostructured material was characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, UV–vis spectroscopy and transmission electron microscopy. Due to their remarkable properties, Sn-doped TiO 2 nts can find potential applications in Li-ion microbatteries, photovoltaics, and catalysis. Particularly, the electrochemical performance as an anode material for Li-ion microbatteries was evaluated in Li test cells. With current density of 70 μA cm −2 (1 C) and cut-off potential of 1 V, Sn-doped TiO 2 nts showed improved performance compared to simple TiO 2 nts, and differential capacity plots revealed that the material undergoes full electrochemical reaction as a Rutile-type TiO 2 .

  6. Chemically synthesized TiO2 and PANI/TiO2 thin films for ethanol sensing applications

    Science.gov (United States)

    Gawri, Isha; Ridhi, R.; Singh, K. P.; Tripathi, S. K.

    2018-02-01

    Ethanol sensing properties of chemically synthesized titanium dioxide (TiO2) and polyaniline/titanium dioxide nanocomposites (PANI/TiO2) had been performed at room temperature. In-situ oxidative polymerization process had been employed with aniline as a monomer in presence of anatase titanium dioxide nanoparticles. The prepared samples were structurally and morphologically characterized by x-ray diffraction, fourier transform infrared spectra, high resolution-transmission electron microscopy and field emission-scanning electron microscopy. The crystallinity of PANI/TiO2 nanocomposite was revealed by XRD and FTIR spectra confirmed the presence of chemical bonding between the polymer chains and metal oxide nanoparticles. HR-TEM micrographs depicted that TiO2 particles were embedded in polymer matrix, which provides an advantage over pure TiO2 nanoparticles in efficient adsorption of vapours. These images also revealed that the TiO2 nanoparticles were irregular in shape with size around 17 nm. FE-SEM studies revealed that in the porous structure of PANI/TiO2 film, the intercalation of TiO2 in PANI chains provides an advantage over pure TiO2 film for uniform interaction with ethanol vapors. The sensitivity values of prepared samples were examined towards ethanol vapours at room temperature. The PANI/TiO2 nanocomposite exhibited better sensing response and faster response-recovery examined at different ethanol concentrations ranging from 5 ppm to 20 ppm in comparison to pure TiO2 nanoparticles. The increase in vapour sensing of PANI/TiO2 sensing film as compared to pure TiO2 film had been explained in detail with the help of gas sensing mechanism of TiO2 and PANI/TiO2. This provides strong evidence that gas sensing properties of TiO2 had been considerably improved and enhanced with the addition of polymer matrix.

  7. Photocatalytic performance of Sn-doped TiO2 nanostructured thin films for photocatalytic degradation of malachite green dye under UV and VIS-lights

    International Nuclear Information System (INIS)

    Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, N.; Sener, S.; Arpac, E.; Sayilkan, H.

    2008-01-01

    Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without acid catalyst at 225 deg. C in 1 h. Nanostructure-TiO 2 based thin films, contain at different solid ratio of TiO 2 in coating, have been prepared on glass surfaces by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, BET and UV/VIS/NIR techniques. The photocatalytic performance of the films was tested for degradation of malachite green dye in solution under UV and VIS-lights. The results showed that the hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, the coated surfaces have nearly super-hydrophilic properties and, the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film. The results also proved that malachite green is decomposed catalytically due to the pseudo first-order reaction kinetics

  8. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Damon Rafieian

    2015-09-01

    Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  9. Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(11 bar 20)

    International Nuclear Information System (INIS)

    Foster, C.M.; Chiarello, R.P.; Chang, H.L.M.; You, H.; Zhang, T.J.; Frase, H.; Parker, J.C.; Lam, D.J.

    1993-01-01

    Epitaxial thin films of TiO 2 and VO 2 single layers and TiO 2 /VO 2 multilayers were grown on (11 bar 20) sapphire (α-Al 2 O 3 ) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO 2 and VO 2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO 2 /VO 2 multilayers are dominated by the VO 2 layers with only minimal signature of the TiO 2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO 2 layers to resonant enhancement of the VO 2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO 2 layers

  10. Photocatalytic Anatase TiO2 Thin Films on Polymer Optical Fiber Using Atmospheric-Pressure Plasma.

    Science.gov (United States)

    Baba, Kamal; Bulou, Simon; Choquet, Patrick; Boscher, Nicolas D

    2017-04-19

    Due to the undeniable industrial advantages of low-temperature atmospheric-pressure plasma processes, such as low cost, low temperature, easy implementation, and in-line process capabilities, they have become the most promising next-generation candidate system for replacing thermal chemical vapor deposition or wet chemical processes for the deposition of functional coatings. In the work detailed in this article, photocatalytic anatase TiO 2 thin films were deposited at a low temperature on polymer optical fibers using an atmospheric-pressure plasma process. This method overcomes the challenge of forming crystalline transition metal oxide coatings on polymer substrates by using a dry and up-scalable method. The careful selection of the plasma source and the titanium precursor, i.e., titanium ethoxide with a short alkoxy group, allowed the deposition of well-adherent, dense, and crystalline TiO 2 coatings at low substrate temperature. Raman and XRD investigations showed that the addition of oxygen to the precursor's carrier gas resulted in a further increase of the film's crystallinity. Furthermore, the films deposited in the presence of oxygen exhibited a better photocatalytic activity toward methylene blue degradation assumedly due to their higher amount of photoactive {101} facets.

  11. Defect controlled tuning of the ratio of ultraviolet to visible light emission in TiO2 thin films

    International Nuclear Information System (INIS)

    Mondal, S.; Basak, D.

    2016-01-01

    The photoluminescence (PL) of sol–gel TiO 2 thin film has been found to be largely dependent on the post-deposition processing such as annealing at 500 °C in air, vacuum and ultraviolet (UV) light curing at room temperature. A detailed analysis of room temperature PL spectra shows that the UV/VIS PL peak intensity ratio is maximum for the film which has been annealed at 500 °C in air. X-ray photoelectron spectroscopy confirms the presence of Ti 3+ type of point defects. The visible emission is deconvoluted to green and orange emissions. Analyses of the present experimental results indicate that V O and/or Ti 3+ causes the green emission and OH and/or excess O 2 adsorption on TiO 2 surface probably causes the orange emission. The time correlated single photon counting spectroscopy data of the UV PL indicates higher number defects in vacuum annealed and UV cured films as compared to the air annealed film. Correlation of the results altogether allows us to conclude that the surface defects those causing the visible emission are smaller in number in the air annealed film. The present results may be useful for tuning the relative PL intensities of UV, green and orange emissions. - Highlights: • Sol–gel TiO 2 films were treated both in air, vacuum at 500 °C and under UV light (room temperature). • UV/VIS PL intensity ratio is maximum for air annealed and minimum for UV cured films. • Both green and orange emission predominantly controls the visible emission of TiO 2 . • The visible emission exhibit a clear correlation with Ti 3+  defects on the surface.

  12. Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

    Science.gov (United States)

    Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

    2018-04-25

    Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

  13. Electrospinning processed nanofibrous TiO2 membranes for photovoltaic applications

    Science.gov (United States)

    Onozuka, Katsuhiro; Ding, Bin; Tsuge, Yosuke; Naka, Takayuki; Yamazaki, Michiyo; Sugi, Shinichiro; Ohno, Shingo; Yoshikawa, Masato; Shiratori, Seimei

    2006-02-01

    We have recently fabricated dye-sensitized solar cells (DSSCs) comprising nanofibrous TiO2 membranes as electrode materials. A thin TiO2 film was pre-deposited on fluorine doped tin oxide (FTO) coated conducting glass substrate by immersion in TiF4 aqueous solution to reduce the electron back-transfer from FTO to the electrolyte. The composite polyvinyl acetate (PVac)/titania nanofibrous membranes can be deposited on the pre-deposited thin TiO2 film coated FTO by electrospinning of a mixture of PVac and titanium isopropoxide in N,N-dimethylformamide (DMF). The nanofibrous TiO2 membranes were obtained by calcining the electrospun composite nanofibres of PVac/titania as the precursor. Spectral sensitization of the nanofibrous TiO2 membranes was carried out with a ruthenium (II) complex, cis-dithiocyanate-N,N'-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid) ruthenium (II) dihydrate. The results indicated that the photocurrent and conversion efficiency of electrodes can be increased with the addition of the pre-deposited TiO2 film and the adhesion treatment using DMF. Additionally, the dye loading, photocurrent, and efficiency of the electrodes were gradually increased by increasing the average thickness of the nanofibrous TiO2 membranes. The efficiency of the fibrous TiO2 photoelectrode with the average membrane thickness of 3.9 µm has a maximum value of 4.14%.

  14. Role of oxygen vacancies in anodic TiO2 thin films

    International Nuclear Information System (INIS)

    Tit, N.; Halley, J.W.

    1992-05-01

    Defects play an important role in the electronic and optical properties of amorphous solids in general. Here we present both experimental and theoretical investigations on the nature and origin of defect states in anodic rutile TiO 2 thin films (of thickness 5nm to 20nm). There is experimental evidence that the observed gap state at 0.7eV below the edge of conduction-band is due to an oxygen vacancy. For this reason, oxygen vacancies are used in our model. A comparison of the calculated bulk-photoconductivity to photospectroscopy experiment reveals that the films have bulk-like transport properties. On the other hand a fit of the surface density of states to the scanning tunneling microscopy (STM) on the (001) surfaces has suggested a surface defect density of 5% of oxygen vacancies. To resolve this discrepancy, we calculated the dc-conductivity where localization effects are included. Our results show an impurity band formation at about p c =9% of oxygen vacancies. We concluded that the gap states seen in STM are localized and the oxygen vacancies are playing the role of trapping centers (deep levels) in the studied films. (author). 15 refs, 5 figs

  15. Heterogeneous photocatalytic degradation of toluene in static environment employing thin films of nitrogen-doped nano-titanium dioxide

    Science.gov (United States)

    Kannangara, Yasun Y.; Wijesena, Ruchira; Rajapakse, R. M. G.; de Silva, K. M. Nalin

    2018-04-01

    Photocatalytic semiconductor thin films have the ability to degrade volatile organic compounds (VOCs) causing numerous health problems. The group of VOCs called "BTEX" is abundant in houses and indoor of automobiles. Anatase phase of TiO2 has a band gap of 3.2 eV and UV radiation is required for photogeneration of electrons and holes in TiO2 particles. This band gap can be decreased significantly when TiO2 is doped with nitrogen (N-TiO2). Dopants like Pd, Cd, and Ag are hazardous to human health but N-doped TiO2 can be used in indoor pollutant remediation. In this research, N-doped TiO2 nano-powder was prepared and characterized using various analytical techniques. N-TiO2 was made in sol-gel method and triethylamine (N(CH2CH3)3) was used as the N-precursor. Modified quartz cell was used to measure the photocatalytic degradation of toluene. N-doped TiO2 nano-powder was illuminated with visible light (xenon lamp 200 W, λ = 330-800 nm, intensity = 1 Sun) to cause the degradation of VOCs present in static air. Photocatalyst was coated on a thin glass plate, using the doctor-blade method, was inserted into a quartz cell containing 2.00 µL of toluene and 35 min was allowed for evaporation/condensation equilibrium and then illuminated for 2 h. Remarkably, the highest value of efficiency 85% was observed in the 1 μm thick N-TiO2 thin film. The kinetics of photocatalytic degradation of toluene by N-TiO2 and P25-TiO2 has been compared. Surface topology was studied by varying the thickness of the N-TiO2 thin films. The surface nanostructures were analysed and studied with atomic force microscopy with various thin film thicknesses.

  16. Photocatalytic performance of Sn-doped TiO2 nanostructured mono and double layer thin films for Malachite Green dye degradation under UV and vis-lights

    International Nuclear Information System (INIS)

    Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, N.; Arpac, E.; Sayilkan, H.

    2007-01-01

    Nanostructure Sn 4+ -doped TiO 2 based mono and double layer thin films, contain 50% solid ratio of TiO 2 in coating have been prepared on glass surfaces by spin-coating technique. Their photocatalytic performances were tested for degradation of Malachite Green dye in solution under UV and vis irradiation. Sn 4+ -doped nano-TiO 2 particle a doping ratio of about 5[Sn 4+ /Ti(OBu n ) 4 ; mol/mol%] has been synthesized by hydrotermal process at 225 deg. C. The structure, surface and optical properties of the thin films and/or the particles have been investigated by XRD, BET and UV/vis/NIR techniques. The results showed that the double layer coated glass surfaces have a very high photocatalytic performance than the other one under UV and vis lights. The results also proved that the hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water. The results also reveal that the coated surfaces have hydrophilic property

  17. Formation of thin film like assembly of exfoliated C3N4 nanoflakes by solvent non-evaporative method using centrifuge

    Science.gov (United States)

    Tejasvi, Ravi; Basu, Suddhasatwa

    2017-12-01

    A simple method for depositing a thin film of nanomaterial on a substrate using centrifugation technique has been developed, whereby solvent evaporation is prevented and solvent reuse is possible. The centrifuge technique of deposition yields uniform, smooth thin film irrespective of substrate surface texture. The deposited TiO2/eC3N4 film studied, through field emission scanning electron microscope, atomic force microscope, and optical surface profilometer, shows variation in surface roughness on the basis of centrifugation speeds. Initially film coverage improves and surface roughness decreases with the increase in rpm of the centrifuge and the surface roughness slightly increases with further increase in rpm. The photoelectrochemical studies of TiO2/eC3N4 films suggest that the centrifuge technique forms better heterojunctions compared to that by spin coating technique leading to enhanced photoelectrochemical water splitting.

  18. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-01-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

  19. Hydroxyapatite coatings on titanium dioxide thin films prepared by pulsed laser deposition method

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Nakashima, Shouta; Kawazoe, Syuichi; Toma, Tetsuya

    2006-01-01

    Hydroxyapatite (HAp) coated on titanium dioxide (TiO 2 ) thin films has been developed to supplement the defects of both TiO 2 and HAp. Thin films have been prepared by pulsed laser deposition (PLD) method using HAp and HAp(10%) + TiO 2 targets. X-ray diffraction (XRD) shows that there are many small peaks of Ca 1 0(PO 4 ) 6 (OH) 2 crystal, and no impurity other than HAp is detected in HAp films prepared using pure HAp target. The composition ratio of the film was analyzed by X-ray photoelectron spectroscopy (XPS). HAp coatings on TiO 2 thin films have been prepared using HAp(10%) + TiO 2 targets. XRD and XPS measurements suggest that crystalline HAp + TiO 2 thin films are obtained by the PLD method using HAp(10%) + TiO 2 target

  20. Nitrogen and europium doped TiO2 anodized films with applications in photocatalysis

    International Nuclear Information System (INIS)

    Chi, Choong-Soo; Choi, Jinwook; Jeong, Yongsoo; Lee, Oh Yeon; Oh, Han-Jun

    2011-01-01

    Micro-arc oxidation method is a useful process for mesoporous titanium dioxide films. In order to improve the photocatalytic activity of the TiO 2 film, N-Eu co-doped titania catalyst was synthesized by micro-arc oxidation in the H 2 SO 4 /Eu(NO 3 ) 3 mixture solution. The specific surface area and the roughness of the anodic titania film fabricated in the H 2 SO 4 /Eu(NO 3 ) 3 electrolyte, were increased compared to that of the anodic TiO 2 film prepared in H 2 SO 4 solution. The absorbance response of N-Eu titania film shows a higher adsorption onset toward visible light region, and the incorporated N and Eu ions during anodization as a dopant in the anodic TiO 2 film significantly enhanced the photocatalytic activity for dye degradation. After dye decomposition test for 3 h, dye removal rates for the anodic TiO 2 film were 60.7% and 90.1% for the N-Eu doped titania film. The improvement of the photocatalytic activity was ascribed to the synergistic effects of the surface enlargement and the new electronic state of the TiO 2 band gap by N and Eu co-doping.

  1. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    Directory of Open Access Journals (Sweden)

    Jing Guo

    2018-01-01

    Full Text Available This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2 pigment powders by extremely thin aluminum oxide (Al2O3 films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development.

  2. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

    2013-01-08

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

  3. Design and fabrication of ZnO/TiO2-based thin-film inverter circuits using solution processing techniques

    International Nuclear Information System (INIS)

    Liau, Leo Chau-Kuang; Kuo, Juo-Wei; Chiang, Hsin-Ni

    2012-01-01

    Novel and cost-effective ceramic-based thin-film inverter circuits, based on two layers of TiO 2 and ZnO films to construct junction field-effect transistors (FETs), were designed and fabricated by solution coating techniques. The double layers of the sol–gel ZnO and TiO 2 films were coated and characterized as a diode according to the current–voltage performance. Two types of FETs, the p-channel (p-FET) and the n-channel (n-FET) devices, were produced using different coating sequences of ZnO and TiO 2 layers. Both of the transistor performances were evaluated by analyzing the source–drain current versus voltage (I ds –V ds ) data with the control of the gate voltage (V g ). The ZnO/TiO 2 -based inverter circuits, such as the complementary-FET device, were further fabricated using the integration of the p-FET and the n-FET. The voltage transfer characteristics of the inverters were estimated by the tests of the input voltage (V in ) versus the output voltage (V out ) for the thin-film inverter circuits. (paper)

  4. Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

    Science.gov (United States)

    Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

    2018-05-01

    The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

  5. A fast and effective method for N-doping TiO2 by post treatment with liquid ammonia: visible light photocatalysis

    International Nuclear Information System (INIS)

    Powell, Michael J.; Palgrave, Robert G.; Dunnill, Charles W.; Parkin, Ivan P.

    2014-01-01

    TiO 2 thin films prepared by sol–gel synthesis were N-doped by post treating with liquid ammonia and annealing at 500 °C. Characterisation by X-ray diffraction and Raman spectroscopy confirmed that the anatase crystal type was retained and present in all samples. Scanning electron microscopy showed that treatment with liquid ammonia had no significant effect on the film morphology. Functional testing under filtered while light conditions involving water contact angle, and the photo destruction of both Resazurin and Stearic acid showed the ammonia treated samples to be active visible light photocatalysts in contrast to the pure TiO 2 and the blank controls. X-ray Photoelectron Spectroscopy studies indicate the presence of interstitial nitrogen (N 1s = 400 eV) suggesting that the origin of the enhanced photocatalytic activity is most likely due to oxygen vacancies created by the interstitial nitrogen incorporation. This synthesis method utilises a simple, inexpensive and highly effective post treatment route to N-dope TiO 2 and produces visible light photocatalysts with potential applications in self-cleaning and healthcare environments. - Highlights: • Synthesis and characterisation of N-doped TiO 2 thin filmsN-doping by a post treatment with liquid ammonia • Enhanced photocatalytic activity • Easy enhancement of current TiO 2 based technologies

  6. Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

    International Nuclear Information System (INIS)

    Bae, Byoung Jae; Seo, Won Seok; Miah, Arzu; Park, Joon T.; Lee, Kwang Yeol; Kim, Keun Chong

    2004-01-01

    The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti(O i Pr) 2 (CH 3 COCHCONEt 2 ) 2 (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and 1 H/ 13 C NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis(CONEt 2 ), trans(COCH 3 ) configuration (1a) in a distorted octahedral environment. Variable-temperature 1 H NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20 .deg. C in toluene-d 8 solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500 .deg. C under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500 .deg. C using a bubbler-based MOCVD method

  7. The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    H. C. Chang

    2014-01-01

    Full Text Available TiO2 compact layers are used in dye-sensitized solar cells (DSSCs to prevent charge recombination between the electrolyte and the transparent conductive substrate (indium tin oxide, ITO; fluorine-doped tin oxide, FTO. Thin TiO2 compact layers are deposited onto ITO/glass by means of radio frequency (rf magnetron sputtering, using deposition parameters that ensure greater photocatalytic activity and increased DSSC conversion efficiency. The photoinduced decomposition of methylene blue (MB and the photoinduced hydrophilicity of the TiO2 thin films are also investigated. The photocatalytic performance characteristics for the deposition of TiO2 films are improved by using the Grey-Taguchi method. The average transmittance in the visible region exceeds 85% for all samples. The XRD patterns of the TiO2 films, for sol-gel with spin coating of porous TiO2/TiO2 compact/ITO/glass, show a good crystalline structure. In contrast, without the TiO2 compact layer (only porous TiO2, the peak intensity of the anatase (101 plane in the XRD patterns for the TiO2 film has a lower value, which demonstrates inferior crystalline quality. With a TiO2 compact layer to prevent charge recombination, a higher short-circuit current density is obtained. The DSSC with the FTO/glass and Pt counter electrode demonstrates the energy conversion efficiency increased.

  8. TiO2 Nanotubes on Transparent Substrates: Control of Film Microstructure and Photoelectrochemical Water Splitting Performance

    Directory of Open Access Journals (Sweden)

    Matus Zelny

    2018-01-01

    Full Text Available Transfer of semiconductor thin films on transparent and or flexible substrates is a highly desirable process to enable photonic, catalytic, and sensing technologies. A promising approach to fabricate nanostructured TiO2 films on transparent substrates is self-ordering by anodizing of thin metal films on fluorine-doped tin oxide (FTO. Here, we report pulsed direct current (DC magnetron sputtering for the deposition of titanium thin films on conductive glass substrates at temperatures ranging from room temperature to 450 °C. We describe in detail the influence that deposition temperature has on mechanical, adhesion and microstructural properties of titanium film, as well as on the corresponding TiO2 nanotube array obtained after anodization and annealing. Finally, we measure the photoelectrochemical water splitting activity of different TiO2 nanotube samples showing that the film deposited at 150 °C has much higher activity correlating well with the lower crystallite size and the higher degree of self-organization observed in comparison with the nanotubes obtained at different temperatures. Importantly, the film showing higher water splitting activity does not have the best adhesion on glass substrate, highlighting an important trade-off for future optimization.

  9. Oriented growth of Sr n+1Ti n O3n+1 Ruddlesden-Popper phases in chemical solution deposited thin films

    International Nuclear Information System (INIS)

    Gutmann, Emanuel; Levin, Alexandr A.; Reibold, Marianne; Mueller, Jan; Paufler, Peter; Meyer, Dirk C.

    2006-01-01

    Oriented thin films of perovskite-related Sr n +1 Ti n O 3 n +1 Ruddlesden-Popper phases (n=1, 2, 3) were grown on (001) single-crystalline SrTiO 3 substrates. Preparation of the films was carried out by wet chemical deposition from metalorganic Sr-Ti solutions (rich in Sr) and subsequent conversion into the crystalline state by thermal treatment in air atmosphere at a maximum temperature of 700 deg. C. Solutions were prepared by a modified Pechini method. The films were investigated by wide-angle X-ray scattering and high-resolution transmission electron microscopy. The phase content of powders prepared from the dried solutions and annealed under similar conditions differed from that present in the films, i.e. only polycrystalline SrTiO 3 was detected together with oxides of Ti and Sr. - Graphical abstract: Cross-sectional image of an oriented chemical solution deposited thin film obtained by high-resolution transmission electron microscopy. Periodical spacings corresponding to SrTiO 3 substrate (right) and Sr 2 TiO 4 Ruddlesden-Popper phase (n=1) film region (left) are marked

  10. Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Goto S.

    2015-06-01

    Full Text Available In sputtering deposition process of TiO2, metal Ti or sintered TiO2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO2 target was used, stoichiometric TiO2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm2. But, sintered TiO2 target is fragile and cannot endure higher density of input power than 3.4W/cm2. On the other hand, Ti target needs higher oxygen concentration (8% in sputtering gas atmosphere for obtaining rutile/anatase. Even though Ti target can be input twice power density of 7.9W/cm2, the highest deposition rate for Ti target was 1.4/nm, which was ~35% of the highest rate for TiO2 target. Then we have study out the composite target consisting of Ti plate and TiO2 chips. Using the composite target, stoichiometric TiO2 films were prepared in the rate of 9.6nm/min at 6.8 W/cm2 under the atmosphere of Ar/2.5%O2. Furthermore, we have found that the TiO2 films obtained from the composite target consisted of about 100% anatase, whereas TiO2 films obtained from other target have rutile dominant structure. The optical band gap energy of the film is determined by using the Tauc plot. The calculated band gap energies for the films deposited by Ti target and composite target were 2.95 and 3.24eV, which are equivalent to that of rutile and anatase structure, respectively.

  11. Optimization of time on CF_4/O_2 etchant for inductive couple plasma reactive ion etching of TiO_2 thin film

    International Nuclear Information System (INIS)

    Adzhri, R.; Fathil, M. F. M.; Ruslinda, A. R.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; Nuzaihan, M. N. M.; Azman, A. H.; Zaki, M.; Arshad, M. K. Md.; Hashim, U.; Ayub, R. M.

    2016-01-01

    In this work, we investigate the optimum etching of titanium dioxide (TiO_2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF_4/O_2 gases as plasma etchant with ratio of 3:1, three samples of TiO_2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF_4 gases with plasma enhancement by O_2 gas able to break the oxide bond of TiO_2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  12. TiO2-BASED Composite Films for the Photodegradation of Oxytetracycline

    Science.gov (United States)

    Li, Hui; Guan, Ling-Xiao; Feng, Ji-Jun; Li, Fang; Yao, Ming-Ming

    2015-02-01

    The spread of the antibiotic oxytetracycline (OTC) has been thought as a threat to the safety of drinking water. In this paper, the photocatalytic activity of the nanocrystalline Fe/Ca co-doped TiO2-SiO2 composite film for the degradation of OTC was studied. The films were characterized by field emission scanning electron microscopy (FE-SEM) equipped with energy-dispersive spectroscopy (EDS), N2 adsorption/desorption isotherms, photoluminescence (PL) spectra, and UV-Vis diffraction reflectance absorption spectra (DRS). The FE-SEM results indicated that the Fe/Ca co-doped TiO2-SiO2 film was composed of smaller nanoparticles compared to pure TiO2 or TiO2-SiO2 film. The BET surface area results showed that the specific surface area of the pure TiO2, TiO2-SiO2 and Ca2+/Fe3+ co-doped TiO2-SiO2 is 118.3 m2g-1, 294.3 m2g-1 and 393.7 m2g-1, respectively. The DRS and PL spectra revealed that the Fe/Ca co-doped TiO2-SiO2 film had strong visible light adsorption and diminished electrons/holes recombination. Experimental results showed that the Fe/Ca co-doped TiO2-SiO2 film is effective in the degradation of OTC under both UV and visible light irradiation.

  13. Antimicrobial and Barrier Properties of Bovine Gelatin Films Reinforced by Nano TiO2

    Directory of Open Access Journals (Sweden)

    R. Nassiri

    2013-11-01

    Full Text Available The effects of nano titanium dioxide incorporation were investigated on the water vaporpermeability, oxygen permeability, and antimicrobial properties of bovine gelatin films. The nano TiO2 (TiO2-N was homogenized by sonication and incorporated into bovine gelatin solutions at different concentrations(e.g. 1, 2, 3, and 5% w/w of dried gelatin. The permeability of the films to water vapor and oxygen wassignificantly decreased by incorporating of low concentration TiO2-N to gelatin solutions. TiO2-N gelatin filmsshowed an excellent antimicrobial activity against Staphylococcus aureus and Escherichia coli. Theseproperties suggest that TiO2-N has the potential as filler in gelatin-based films for using as an active packagingmaterials in pharmaceutical and food packaging industries.

  14. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    NARCIS (Netherlands)

    Guo, J.; Bui, H.V.; Valdesueiro Gonzalez, D.; Yuan, Shaojun; Liang, Bin; van Ommen, J.R.

    2018-01-01

    This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on

  15. Reflection Enhancement Using TiO2/SiO2 Bilayer Films Prepared by Cost-Effective Sol-gel Method

    Directory of Open Access Journals (Sweden)

    R. Ajay Kumar

    2017-04-01

    Full Text Available Multilayer dielectric thin film structure has been demanded for its application in optoelectronic devices such as optical waveguides, vertical cavity surface-emitting devices, biosensors etc. In this paper, we present the fabrication and characterization of bilayer thin films of TiO2/SiO2 using sol-gel spin coating method. Ellipsometer measurement showed refractive index values 1.46, 2.1 corresponding to the SiO2 and TiO2 films respectively. The FTIR transmittance peaks observed at ~970 cm-1, ~1100 cm-1 and ~1400 cm-1 are attributed to the Ti-O-Si, Si-O-Si and Ti-O-Ti bonds respectively. Maximum reflectance is observed from two bilayer film structure which can be further optimized to get the high reflection to a broad wavelength range.

  16. Single-Nanoparticle Photoelectrochemistry at a Nanoparticulate TiO2 -Filmed Ultramicroelectrode.

    Science.gov (United States)

    Peng, Yue-Yi; Ma, Hui; Ma, Wei; Long, Yi-Tao; Tian, He

    2018-03-26

    An ultrasensitive photoelectrochemical method for achieving real-time detection of single nanoparticle collision events is presented. Using a micrometer-thick nanoparticulate TiO 2 -filmed Au ultra-microelectrode (TiO 2 @Au UME), a sub-millisecond photocurrent transient was observed for an individual N719-tagged TiO 2 (N719@TiO 2 ) nanoparticle and is due to the instantaneous collision process. Owing to a trap-limited electron diffusion process as the rate-limiting step, a random three-dimensional diffusion model was developed to simulate electron transport dynamics in TiO 2 film. The combination of theoretical simulation and high-resolution photocurrent measurement allow electron-transfer information of a single N719@TiO 2 nanoparticle to be quantified at single-molecule accuracy and the electron diffusivity and the electron-collection efficiency of TiO 2 @Au UME to be estimated. This method provides a test for studies of photoinduced electron transfer at the single-nanoparticle level. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

    Science.gov (United States)

    Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

    2018-05-01

    Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

  18. Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Hase, Takashi; Shiosaki, Tadashi

    1991-01-01

    Ferroelectric Pb(Zr, Ti)O 3 [PZT] thin films have been prepared on Pt/Ti/SiO 2 /Si and Pt/SiO 2 /Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO 2 /Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 μm 2 , the switching time and the switched charge density measured were 20 ns and 10 μC/cm 2 , respectively. The switching time was strongly dependent on the electrode area. (author)

  19. Microporous TiO2-WO3/TiO2 films with visible-light photocatalytic activity synthesized by micro arc oxidation and DC magnetron sputtering

    International Nuclear Information System (INIS)

    Wu, Kee-Rong; Hung, Chung-Hsuang; Yeh, Chung-Wei; Wu, Jiing-Kae

    2012-01-01

    Highlights: ► A simple MAO is used to prepare porous WO 3 /TiO 2 layer on Ti sheet as a visible-light enabled catalyst. ► The photocatalytic activity of the WO 3 /TiO 2 is enhanced by sputtering over an N,C-TiO 2 layer. ► This is ascribed to the synergetic effect of hybrid sample prepared by two-step method. - Abstract: This study reports the preparation of microporous TiO 2 -WO 3 /TiO 2 films with a high surface area using a two-step approach. A porous WO 3 /TiO 2 template was synthesized by oxidizing a titanium sheet using a micro arc oxidation (MAO) process. This sheet was subsequently overlaid with a visible light (Vis)-enabled TiO 2 (N,C-TiO 2 ) film, which was deposited by codoping nitrogen (N) and carbon (C) ions into a TiO 2 lattice using direct current magnetron sputtering. The resulting microporous TiO 2 -WO 3 /TiO 2 film with a 0.38-μm-thick N,C-TiO 2 top-layer exhibited high photocatalytic activity in methylene blue (MB) degradation among samples under ultraviolet (UV) and Vis irradiation. This is attributable to the synergetic effect of two-step preparation method, which provides a highly porous microstructure and the well-crystallized N,C-TiO 2 top-layer. This is because a higher surface area with high crystallinity favors the adsorption of more MB molecules and more photocatalytic active areas. Thus, the microporous TiO 2 -WO 3 /TiO 2 film has promising applications in the photocatalytic degradation of dye solution under UV and Vis irradiation. These results imply that the microporous WO 3 /TiO 2 can be used as a template of hybrid electrode because it enables rapid fabrication.

  20. Enhanced photoelectrochemical properties of F-containing TiO2 sphere thin film induced by its novel hierarchical structure

    International Nuclear Information System (INIS)

    Dong Xiang; Tao Jie; Li Yingying; Zhu Hong

    2009-01-01

    The novel nanostructured F-containing TiO 2 (F-TiO 2 ) sphere was directly synthesized on the surface of Ti foil in the solution of NH 4 F and HCl by one-step hydrothermal approach under low-temperature condition. The samples were characterized respectively by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The results showed that the F-TiO 2 sphere was hierarchical structure, which composed of porous octahedron crystals with one truncated cone, leading to a football-like morphology. XPS results indicated that F - anions were just physically adsorbed on the surface of TiO 2 microspheres. The studies on the optical properties of the F-TiO 2 were carried out by UV-vis light absorption spectrum. The surface fluorination of the spheres, the unique nanostructure induced accessible macropores or mesopores, and the increased light-harvesting abilities were crucial for the high photoelectrochemical activity of the synthesized F-TiO 2 sphere for water-splitting. The photocurrent density of the F-TiO 2 sphere thin film was more than two times than that of the P25 thin film. Meanwhile, a formation mechanism was briefly proposed. This approach could provide a facile method to synthesize F-TiO 2 microsphere with a special morphology and hierarchical structure in large scale.

  1. Annealing time dependence of the physical, electrical and pH response characteristics of spin coated TiO2 thin films

    International Nuclear Information System (INIS)

    Zulkefle, M A; Rahman, R A; Yusoff, K A; Herman, S H; Abdullah, W F H; Rusop, M

    2015-01-01

    Titanium dioxide (TiO 2 ) thin film was deposited on indium tin oxide (ITO) substrate and used as sensing membrane of EGFET pH sensor. The thin film was fabricated using sol- gel spin coating method. All samples were annealed at 400 °C but the annealing time was varied. This is done to study the effects of annealing time on physical and electrical properties of titanium dioxide thin film. The sensitivity of each sample towards H + ion was measured and result shows that sample annealed for 45 minutes has the highest sensitivity (52.6 mV/pH). It is found that increasing annealing duration will increase the pH sensitivity but a limit will be reached at certain point. Longer annealing processes done beyond this point will results in lower pH sensitivity. (paper)

  2. Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

    Science.gov (United States)

    Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.

    2018-04-01

    Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.

  3. Synthesis and characterization of anatase-TiO2 thin films

    International Nuclear Information System (INIS)

    Sankapal, B.R.; Lux-Steiner, M.Ch.; Ennaoui, A.

    2005-01-01

    A new and effective method for the preparation of nanocrystalline TiO 2 (anatase) thin films is presented. This method is based on the use of peroxo-titanium complex as a single precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into TiO 2 (anatase) phase. The films obtained are uniform, compact and free of pinholes. A wide range of techniques are used for characterization, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (EDAX) and UV-Vis-NIR spectrophotometer. Glass, indium-doped tin oxide (ITO) and quartz are used as substrates. TiO 2 (anatase) phase with (1 0 1) preferred orientation is obtained for the films. Byproduct (collected powder) consists of the same crystal structure. The optical measurement reveals the indirect bandgap of 3.2 eV

  4. Synthesis and characterization of anatase-TiO 2 thin films

    Science.gov (United States)

    Sankapal, B. R.; Lux-Steiner, M. Ch.; Ennaoui, A.

    2005-01-01

    A new and effective method for the preparation of nanocrystalline TiO 2 (anatase) thin films is presented. This method is based on the use of peroxo-titanium complex as a single precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into TiO 2 (anatase) phase. The films obtained are uniform, compact and free of pinholes. A wide range of techniques are used for characterization, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (EDAX) and UV-Vis-NIR spectrophotometer. Glass, indium-doped tin oxide (ITO) and quartz are used as substrates. TiO 2 (anatase) phase with (1 0 1) preferred orientation is obtained for the films. Byproduct (collected powder) consists of the same crystal structure. The optical measurement reveals the indirect bandgap of 3.2 eV.

  5. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  6. Structure and Properties of La2O3-TiO2 Nanocomposite Films for Biomedical Applications

    Science.gov (United States)

    Zhang, Lin; Sun, Zhi-Hua; Yu, Feng-Mei; Chen, Hong-Bin

    2011-01-01

    The hemocompatibility of La2O3-doped TiO2 films with different concentration prepared by radio frequency (RF) sputtering was studied. The microstructures and blood compatibility of TiO2 films were investigated by scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and UV-visible optical absorption spectroscopy, respectively. With the increasing of the La2O3 concentrations, the TiO2 films become smooth, and the grain size becomes smaller. Meanwhile, the band gap of the samples increases from 2.85 to 3.3 eV with increasing of the La2O3 content in TiO2 films from 0 to 3.64%. La2O3-doped TiO2 films exhibit n-type semiconductor properties due to the existence of Ti2+ and Ti3+. The mechanism of hemocompatibility of TiO2 film doped with La2O3 was analyzed and discussed. PMID:22162671

  7. Effects of atomic oxygen on titanium dioxide thin film

    Science.gov (United States)

    Shimosako, Naoki; Hara, Yukihiro; Shimazaki, Kazunori; Miyazaki, Eiji; Sakama, Hiroshi

    2018-05-01

    In low earth orbit (LEO), atomic oxygen (AO) has shown to cause degradation of organic materials used in spacecrafts. Similar to other metal oxides such as SiO2, Al2O3 and ITO, TiO2 has potential to protect organic materials. In this study, the anatese-type TiO2 thin films were fabricated by a sol-gel method and irradiated with AO. The properties of TiO2 were compared using mass change, scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmittance spectra and photocatalytic activity before and after AO irradiation. The results indicate that TiO2 film was hardly eroded and resistant against AO degradation. AO was shown to affects only the surface of a TiO2 film and not the bulk. Upon AO irradiation, the TiO2 films were slightly oxidized. However, these changes were very small. Photocatalytic activity of TiO2 was still maintained in spite of slight decrease upon AO irradiation, which demonstrated that TiO2 thin films are promising for elimination of contaminations outgassed from a spacecraft's materials.

  8. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  9. TiO2 anatase thin films deposited by spray pyrolysis of an aerosol of titanium diisopropoxide

    International Nuclear Information System (INIS)

    Conde-Gallardo, A.; Guerrero, M.; Castillo, N.; Soto, A.B.; Fragoso, R.; Cabanas-Moreno, J.G.

    2005-01-01

    Titanium dioxide thin films were deposited on crystalline silicon (100) and fused quartz substrates by spray pyrolysis (SP) of an aerosol, generated ultrasonically, of titanium diisopropoxide. The evolution of the crystallization, studied by X-ray diffraction (XRD), atomic force (AFM) and scanning electron microscopy (SEM), reflection and transmission spectroscopies, shows that the deposition process is nearly close to the classical chemical vapor deposition (CVD) technique, producing films with smooth surface and good crystalline properties. At deposition temperatures below 400 deg. C, the films grow in amorphous phase with a flat surface (roughness∼0.5 nm); while for equal or higher values to this temperature, the films develop a crystalline phase corresponding to the TiO 2 anatase phase and the surface roughness is increased. After annealing at 750 deg. C, the samples deposited on Si show a transition to the rutile phase oriented in (111) direction, while for those films deposited on fused quartz no phase transition is observed

  10. The Effect of Normal Force on Tribocorrosion Behaviour of Ti-10Zr Alloy and Porous TiO2-ZrO2 Thin Film Electrochemical Formed

    Science.gov (United States)

    Dănăilă, E.; Benea, L.

    2017-06-01

    The tribocorrosion behaviour of Ti-10Zr alloy and porous TiO2-ZrO2 thin film electrochemical formed on Ti-10Zr alloy was evaluated in Fusayama-Mayer artificial saliva solution. Tribocorrosion experiments were performed using a unidirectional pin-on-disc experimental set-up which was mechanically and electrochemically instrumented, under various solicitation conditions. The effect of applied normal force on tribocorrosion performance of the tested materials was determined. Open circuit potential (OCP) measurements performed before, during and after sliding tests were applied in order to determine the tribocorrosion degradation. The applied normal force was found to greatly affect the potential during tribocorrosion experiments, an increase in the normal force inducing a decrease in potential accelerating the depassivation of the materials studied. The results show a decrease in friction coefficient with gradually increasing the normal load. It was proved that the porous TiO2-ZrO2 thin film electrochemical formed on Ti-10Zr alloy lead to an improvement of tribocorrosion resistance compared to non-anodized Ti-10Zr alloy intended for biomedical applications.

  11. Spray pyrolysed Ru:TiO2 thin film electrodes prepared for electrochemical supercapacitor

    Science.gov (United States)

    Fugare, B. Y.; Thakur, A. V.; Kore, R. M.; Lokhande, B. J.

    2018-04-01

    Ru doped TiO2 thin films are prepared by using 0.06 M aqueous solution of potassium titanium oxalate (pto), and 0.005 M aqueous solution of ruthenium tri chloride (RuCl3) precursors. The deposition was carried on stainless steel (SS) by using well known ultrasonic spray pyrolysis technique (USPT) at 723° K by maintaining the spray rate 12 cc/min and compressed air flow rate 10 Lmin-1. Prepared Ru:TiO2 thin films were characterized by structurally, morphologically and electrochemically. Deposited RuO2 shows amorphous structure and TiO2 shows tetragonal crystal structure with rutile as prominent phase at very low decomposition temperature. SEM micrographs of RuO2 exhibits porous, interconnected, spherical grains type morphology and TiO2 shows porous, nanorods and nanoplates like morphology and also Ru doped TiO2 shows porous, spherical, granular and nanorods type morphology. The electrochemical cyclic voltammetery shows mixed capacitive behavior. The achieved highest value of specific capacitance 2692 F/g was Ru doped TiO2 electrode in 0.5 M H2SO4.

  12. Love Wave Ultraviolet Photodetector Fabricated on a TiO2/ST-Cut Quartz Structure

    Directory of Open Access Journals (Sweden)

    Walter Water

    2014-01-01

    Full Text Available A TiO2 thin film deposited on a 90° rotated 42°45′ ST-cut quartz substrate was applied to fabricate a Love wave ultraviolet photodetector. TiO2 thin films were grown by radio frequency magnetron sputtering. The crystalline structure and surface morphology of TiO2 thin films were examined using X-ray diffraction, scanning electron microscope, and atomic force microscope. The effect of TiO2 thin film thickness on the phase velocity, electromechanical coupling coefficient, temperature coefficient of frequency, and sensitivity of ultraviolet of devices was investigated. TiO2 thin film increases the electromechanical coupling coefficient but decreases the temperature coefficient of frequency for Love wave propagation on the 90° rotated 42°45′ ST-cut quartz. For Love wave ultraviolet photodetector application, the maximum insertion loss shift and phase shift are 2.81 dB and 3.55 degree at the 1.35-μm-thick TiO2 film.

  13. Titanium oxynitride thin films as high-capacity and high-rate anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Hsia, Chen-Hsien

    2015-01-01

    Titanium oxynitride (TiO_xN_y) was synthesized by reactive magnetron sputtering in a mixed N_2/O_2/Ar gas at ambient temperature. TiO_xN_y thin films with various amounts of nitrogen contents were deposited by varying the N_2/O_2 ratios in the background gas. The synthesized TiO_xN_y films with different compositions (TiO_1_._8_3_7N_0_._0_6_0_, TiO_1_._8_9_0N_0_._0_6_8_, TiO_1_._8_6_5N_0_._0_7_3, and TiO_1_._8_8_2N_0_._1_6_3) all displayed anatase phase, except TiO_1_._8_8_2N_0_._1_6_3. The impedances and grain sizes showed obvious variations with the nitrogen contents. A wide potential window from 3.0 V to 0.05 V, high-rate charge–discharge testing, and long cycle testing were applied to investigate the performances of synthesized TiO_xN_y and pure TiO_2 as anodes for lithium-ion batteries. These TiO_xN_y anodes can be cycled under high rates of 125 μA/cm"2 (10 °C) because of the lower charge–transfer resistance compared with the TiO_2 anode. At 10 °C the discharge capacity of the optimal TiO_xN_y composition is 1.5 times higher than that of pure TiO_2. An unexpectedly large reversible capacity of ~ 300 μAh/cm"2 μm (~ 800 mAh/g) between 1.0 V and 0.05 V was recorded for the TiO_xN_y anodes. The TiO_xN_y anode was cycled (3.0 V to 0.05 V) at 10 °C over 300 times without capacity fading while delivering a capacity of ~ 150 μAh/cm"2 μm (~ 400 mAh/g). - Highlights: • Titanium oxynitride (TiO_xN_y) thin films as anode materials were studied. • TiO_xN_y thin films with various amounts of nitrogen contents were studied_. • High rate capability of TiO_xN_y was studied.

  14. Interfacial characteristics and dielectric properties of Ba0.65Sr0.35TiO3 thin films

    International Nuclear Information System (INIS)

    Quan Zuci; Zhang Baishun; Zhang Tianjin; Zhao Xingzhong; Pan Ruikun; Ma Zhijun; Jiang Juan

    2008-01-01

    Ba 0.65 Sr 0.35 TiO 3 (BST) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti 4+ cations are partially reduced to form amorphous oxides such as TiO x (x -7 A/cm 2 at 1.23 V and lower than 5.66 x 10 -6 A/cm 2 at 2.05 V as well as breakdown strength is above 3.01 x 10 5 V/cm

  15. Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

    Science.gov (United States)

    Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

    2011-06-01

    We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

  16. Degradation of gas-phase trichloroethylene over thin-film TiO2 photocatalyst in multi-modules reactor

    International Nuclear Information System (INIS)

    Kim, Sang Bum; Lee, Jun Yub; Kim, Gyung Soo; Hong, Sung Chang

    2009-01-01

    The present paper examined the photocatalytic degradation (PCD) of gas-phase trichloroethylene (TCE) over thin-film TiO 2 . A large-scale treatment of TCE was carried out using scale-up continuous flow photo-reactor in which nine reactors were arranged in parallel and series. The parallel or serial arrangement is a significant factor to determine the special arrangement of whole reactor module as well as to compact the multi-modules in a continuous flow reactor. The conversion of TCE according to the space time was nearly same for parallel and serial connection of the reactors.

  17. Fine control of the amount of preferential <001> orientation in DC magnetron sputtered nanocrystalline TiO2 films

    International Nuclear Information System (INIS)

    Stefanov, B; Granqvist, C G; Österlund, L

    2014-01-01

    Different crystal facets of anatase TiO 2 are known to have different chemical reactivity; in particular the {001} facets which truncates the bi-tetrahedral anatase morphology are reported to be more reactive than the usually dominant {101} facets. Anatase TiO 2 thin films were deposited by reactive DC magnetron sputtering in Ar/O 2 atmosphere and were characterized using Rietveld refined grazing incidence X-ray diffraction, atomic force microscopy and UV/Vis spectroscopy. By varying the partial O2 pressure in the deposition chamber, the degree of orientation of the grains in the film could be systematically varied with preferred <001> orientation changing from random upto 39% as determined by March-Dollase method. The orientation of the films is shown to correlate with their reactivity, as measured by photo-degradation of methylene blue in water solutions. The results have implications for fabrication of purposefully chemically reactive thin TiO 2 films prepared by sputtering methods

  18. 500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

    Science.gov (United States)

    Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

    2018-01-01

    In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

  19. Band-gap narrowing of TiO2 films induced by N-doping

    International Nuclear Information System (INIS)

    Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.

    2006-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  20. Influence of the substrate on the morphological evolution of gold thin films during solid-state dewetting

    International Nuclear Information System (INIS)

    Nsimama, Patrick D.; Herz, Andreas; Wang, Dong; Schaaf, Peter

    2016-01-01

    Highlights: • Dewetting of thin gold films is faster on TiO_2 than on SiO_2. • Dewetting of thin gold films is faster on amorphous TiO_2 than on crystalline TiO_2. • The kinetics is attributed to the energy of adhesion. • The morphology of thin Au films deposited on TiO_2 substrates is different to those deposited on SiO_2 substrates. • The dewetting activation energy of Au films deposited on crystalline substrates was higher than the activation energy of Au nanofilms deposited on amorphous TiO_2 substrates. - Abstract: The evolution of electron-beam evaporated Au thin films deposited on crystalline TiO_2 (c-TiO_2) and amorphous TiO_2 (a-TiO_2) as well as amorphous SiO_2 substrates are investigated. The kinetic of dewetting is clearly dependent on the type of substrate and is faster on TiO_2 substrates than on SiO_2 substrates. This difference can result from the difference in adhesion energy. Furthermore, the kinetic of dewetting is faster on a-TiO_2 than on c-TiO_2, possibly due to the crystallization of TiO_2 during annealing induced dewetting process. The morphologies of dewetted Au films deposited on crystalline TiO_2 are characterized by branched holes. The XRD patterns of the Au films deposited on TiO_2 substrates constituted peaks from both metallic Au and anatase TiO_2. The activation energy of Au films deposited on crystalline TiO_2 substrates was higher than that that of the films deposited on amorphous TiO_2 substrates.

  1. Effect of growth time on the structure, morphology and optical properties of hydrothermally synthesized TiO2 nanorod thin films

    Science.gov (United States)

    Mohapatra, A. K.; Nayak, J.

    2018-05-01

    Titanium dioxide (TiO2) nanorod thin films were deposited on fluorine doped tin oxide coated glass substrates by a single step rapid hydrothermal process. The concentration of the precursor, the temperature of the reaction mixture were optimized in order to enhance the rate of deposition. Unlike the previously reported hydrothermal treatment for 24 - 48 h, the deposition of well aligned titanium dioxide nanorods was achieved in a short time such as 3 - 8 h. The crystal structure of the films were investigated by X-rays diffraction. The morphology of the nanorod films were studied with scanning electron microscopy. The optical properties were studied by photoluminescence spectroscopy.

  2. Epitaxial Fe16N2 thin film on nonmagnetic seed layer

    Science.gov (United States)

    Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

    2018-05-01

    Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

  3. Preparation and properties of TiO2 films by complexing agent-assisted sol-gel method. Yuki haiishi wo mochiita sol gel ho ni yoru TiO2 usumaku no sakusei to seishitsu

    Energy Technology Data Exchange (ETDEWEB)

    Nishide, T [Nissan Motor Co. Ltd., Tokyo (Japan); Mizukami, F [National Chemical Laboratory for Industry, Tsukuba (Japan)

    1992-09-01

    In order to control optical properties of TiO2 thin films, the TiO2 films were prepared by the sol-gel method using glycols or their ether derivatives as organic ligands to study the effect of the organic ligands on the refractive indices and crystal phases. Samples were prepared as follows: Organic ligand was added into the ethanol solution of Ti(O-iso-pr) 4, and aqueous nitric acid solution was added after reflux, and sol obtained by subsequent reflux was applied on soda lime glass or silicon wafer substrates, which were baked at 400 to 900 centigrade. Three kinds of ligand such as 2-(2-methoxyethoxy) ethanol were used. Measured items are the film thickness, thermal characteristics, crystal phase and refractive indices of thin films. The key points are as follows: In case of TiO2 thin films on the soda lime glass substrate, the changing pattern of refractive indices by temperature changes with the kind of ligand used and further the peak strength of anatase changes with the kind of ligand used. In case of silicon wafer substrates, the peak strength of anatase and rutile changes with the kind of ligand. The refractive indices and crystal phase can be controlled by properly using the ligand. 7 refs., 11 figs.

  4. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    Science.gov (United States)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  5. Semi-transparent ordered TiO_2 nanostructures prepared by anodization of titanium thin films deposited onto the FTO substrate

    International Nuclear Information System (INIS)

    Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Skowroński, Łukasz; Karczewski, Jakub; Siuzdak, Katarzyna

    2016-01-01

    Highlights: • High quality titanium coatings were doposited using industrial magnetron sputtering equipment. • Semi-transparent TiO_2 were prepared via anodization realized in various conditions. • Depending on electrolyte type, ordered tubular or porous TiO_2 layers were obtained. • Prepared material can act as semiconducting layer in photovoltaic cells. - Abstract: In a significant amount of cases, the highly ordered TiO_2 nanotube arrays grow through anodic oxidation of a titanium metal plate immersed in electrolyte containing fluoride ions. However, for some practical applications, e.g. solar cells or electrochromic windows, the semi-transparent TiO_2 formed directly on the transparent, conductive substrate is very much desired. This work shows that high-quality Ti coating could be formed at room temperature using an industrial magnetron sputtering system within 50 min. Under optimized conditions, the anodization process was performed on 2 μm titanium films deposited onto the FTO (fluorine-tin-oxide) support. Depending on the electrolyte type, highly ordered tubular or porous titania layers were obtained. The fabricated samples, after their thermal annealing, were investigated using scanning electron microscopy, Raman spectroscopy and UV–vis spectroscopy in order to investigate their morphology, crystallinity and absorbance ability. The photocurrent response curves indicate that materials are resistant to the photocorrosion process and their activity is strongly connected to optical properties. The most transparent TiO_2 films were fabricated when Ti was anodized in water electrolyte, whereas the highest photocurrent densities (12 μA cm"−"2) were registered for titania received after Ti anodization in ethylene glycol solution. The obtained results are of significant importance in the production of thin, semi-transparent titania nanostructures on a commercial scale.

  6. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  7. Highly flexible self-standing film electrode composed of mesoporous rutile TiO2/C nanofibers for lithium-ion batteries

    International Nuclear Information System (INIS)

    Zhao Bote; Cai Rui; Jiang Simin; Sha Yujing; Shao Zongping

    2012-01-01

    There is increasing interest in flexible, safe, high-power thin-film lithium-ion batteries which can be applied to various modern devices. Although TiO 2 in rutile phase is highly attractive as an anode material of lithium-ion batteries for its high thermal stability and theoretical capacity of 336 mA h g −1 and low price, its inflexibility and sluggish lithium intercalation kinetics of bulk phase strongly limit its practical application for particular in thin-film electrode. Here we show a simple way to prepare highly flexible self-standing thin-film electrodes composed of mesoporous rutile TiO 2 /C nanofibers with low carbon content ( 2 in as-fabricated nanofibers. Big size (10 cm × 4 cm), flexible thin film is obtained after heat treatment under 10%H 2 –Ar at 900 °C for 3 h. After optimization, the diameter of fibers can reach as small as ∼110 nm, and the as-prepared rutile TiO 2 films show high initial electrochemical activity with the first discharge capacity as high as 388 mA h g −1 . What is more, very stable reversible capacities of ∼122, 92, and 70 mA h g −1 are achieved respectively at 1, 5 and 10 C rates with negligible decay rate within 100 cycling times.

  8. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

    Science.gov (United States)

    Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

    2018-01-01

    Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

  9. Fabrication of doped TiO2 nanotube array films with enhanced photo-catalytic activity

    Science.gov (United States)

    Peighambardoust, Naeimeh-Sadat; Khameneh-asl, Shahin; Khademi, Adib

    2018-01-01

    In the present work, we investigate the N and Fe-doped TiO2 nanotube array film prepared by treating TiO2 nanotube array film with ammonia solution and anodizing in Fe(NO3)3 solution respectively. This method avoided the use of hazardous ammonia gas, or laborious ion implantation process. N and Fe-doped TiO2 nanotube arrays (TiO2 NTs) were prepared by electrochemical anodization process in 0.5 wt % HF aqueous solution. The anodization was performed at the conditions of 20 V and 20 min, Followed by a wet immersion in NH3.H2O (1M) for N-doping for 2 hr and annealing post-treatment at 450 °C. The morphology and structure of the nanotube films were characterized by field emission scanning electron microscope (FESEM) and EDX. UV-vis. illumination test were done to observe photo-enhanced catalysis. The effect of different annealing temperature on the structure and photo-absorption property of the TiO2-TNTs was investigated. The results showed that N-TNTs nanotubes exhibited higher photocatalytic activity compared whit the Fe-doped and pure TNTs, because doping N promoted the separation of the photogenerated electrons and holes.

  10. Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p-xylene: TiO2 doped Cr, UiO66-NH2 and LaBO3 (B  =  Fe, Mn, and Co)

    Science.gov (United States)

    Loc Luu, Cam; Thuy Van Nguyen, Thi; Nguyen, Tri; Nguyen, Phung Anh; Hoang, Tien Cuong; Ha, Cam Anh

    2018-03-01

    By dip-coating technique the thin films of nano-photocatalysts TiO2, Cr-doped TiO2, LaBO3 perovskites (B  =  Fe, Mn, and Co) prepared by sol-gel method, and UiO66-NH2 prepared by a solvothermal were obtained and employed for gas phase degradation of p-xylene. Physicochemical characteristics of the catalysts were examined by the methods of BET, SEM, TEM, XRD, FT-IR, TGA, Raman and UV-vis spectroscopies. The thickness of film was determined by a Veeco-American Dektek 6M instrument. The activity of catalysts was evaluated in deep photooxidation of p-xylene in a microflow reactor at room temperature with the radiation sources of a UV (λ  =  365 nm) and LED lamps (λ  =  400-510 nm). The obtained results showed that TiO2 and TiO2 doped Cr thin films was featured by an anatase phase with nanoparticles of 10-100 nm. Doping TiO2 with 0.1%mol Cr2O3 led to reduce band gap energy from 3.01 down to 1.99 eV and extend the spectrum of photon absorption to the visible region (λ  =  622 nm). LaBO3 perovkite thin films were also featured by a crystal phase with average particle nanosize of 8-40 nm, a BET surface area of 17.6-32.7 m2 g-1 and band gap energy of 1.87-2.20 eV. UiO66-NH2 was obtained in the ball shape of 100-200 nm, a BET surface area of 576 m2 g-1 and a band gap energy of 2.83 eV. The low band gap energy nano-photocatalysts based on Cr-doped TiO2 and LaBO3 perovskites exhibited highly stable and active for photo-degradation of p-xylene in the gas phase under radiation of UV-vis light. Perovskite LaFeO3 and Cr-TiO2 thin films were the best photocatalysts with a decomposition yield being reached up to 1.70 g p-xylene/g cat.

  11. Cathodic electrochemical deposition of Magnéli phases TinO2n−1 thin films at different temperatures in acetonitrile solution

    International Nuclear Information System (INIS)

    Ertekin, Zeliha; Tamer, Uğur; Pekmez, Kadir

    2015-01-01

    Highlights: • TiO x films were prepared by cathodic electrodeposition in acetonitrile. • One-step electrodeposition of TiO x films without heat treatment process. • Different crystalline Ti n O 2n−1 films (γTi 3 O 5 , λTi 3 O 5 , Ti 4 O 7 , Ti 5 O 9 ) were obtained. - Abstract: The Magnéli phase titanium oxide films prepared by cathodic electrodeposition on indium–tin-oxide coated glass substrates from saturated peroxo-titanium solution in acetonitrile. Electrodeposited brownish semi-conductor thin films were identified via X-ray diffraction, Raman spectroscopy, UV–vis spectroscopy and scanning electron microscopy (SEM). The effects of different potentials and temperatures on the crystallinity of the thin films have been discussed. Ti 3 O 5 , Ti 4 O 7 and Ti 5 O 9 as the most favorable forms of the Ti n O 2n−1 were electrodeposited on ITO electrode at electrochemical deposition potentials and different temperatures. The present investigation reveals that the electrochemical deposition of crystalline Ti n O 2n−1 films by a simple one-step electrodeposition method (without any heat treatment) in acetonitrile solution is possible and very promising as a preparation method for electrochemical applications

  12. P-MoS2 / n-CdS thin film heterojunction

    International Nuclear Information System (INIS)

    El Maliki, H.; Gourmelon, E.; Bernede, J.C.; Pouzet, J.; Mebarki, M.; Khelil, A.; Zoaeter, M.

    1999-01-01

    Full text.Layered transition metal dichacolgenides such as MoS 2 are semiconductors that can be good candidates for solar energy conversion. Photo-electrochemical cells based on single crystals have achieved and efficiency of 17% (1). However, up to day, no solid rectifying contact has been put in evidence in the case of MoS 2 thin films.. Recently we have shown that such high crystalline quality MoS 2 films can be obtained onto textured tungsten slides. This allowed to try to grow sandwich rectifying structures. The bottom electrode will be W, MoS 2 being p-type, the n type film used was CdS and the upper electrode was indium. W foils textured along the (h00) direction were used as substrate and bottom electrode. The use of a W (textured) substrate induces the texturation of the MoS 2 films along the (001) direction when after evaporation of the constituents the films were annealed at T=1073 K for half an hour under argon atmosphere. Upon the MoS 2 a CdS thin film was deposited by chemical bath deposition (CBD). CdS thin films were prepared classically from a solution of cadmium sulfate, thiourea in hydrazine and ammonia. Ammonia was used adjust the solution pH to a value between 9 and 10. Bath temperature has been held constant at 343 K. Thin deposit films of CdS were yellow colored. They were constituted of an homogenous and adherent layer with a thickness of about 100 nm. It has been shown by x-ray diffraction the they were crystallized in their hexagonal structure. At least an indium film was deposited in order to achieve the structure M/MoS 2 p/CdSn/M. In order to check the equality of the W/MoS 2 contact, W/MoS 2 /W samples were also carried out by sputtering deposition of the tungsten upper electrode (300 nm thick). The thickness of the MoS 2 layers was about 500 nm. The J-V characteristics of a W/MoS 2 /W sample are ohmic. Moreover the resistance deduced from the slope ΔV/ΔI increases when the temperature decreases, which shows that there is not any

  13. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO2 thin films obtained by evaporation induced self-assembly method

    International Nuclear Information System (INIS)

    Borlaf, Mario; Caes, Sebastien; Dewalque, Jennifer; Colomer, María Teresa; Moreno, Rodrigo; Cloots, Rudi; Boschini, Frederic

    2014-01-01

    Polymeric sol–gel route has been used for the preparation of TiO 2 and RE 2 O 3– TiO 2 (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er 3+ and Eu 3+ was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu 3+ and Er 3+ f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO 2 mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials

  14. Relation between crystallinity and chemical nature of surface on wettability: A study on pulsed laser deposited TiO2 thin films

    International Nuclear Information System (INIS)

    Shirolkar, Mandar M.; Phase, Deodatta; Sathe, Vasant; Choudhary, Ram Janay; Rodriguez-Carvajal, J.; Kulkarni, Sulabha K.

    2011-01-01

    Pure titania (TiO 2 ) polycrystalline thin films in rutile, anatase and mixed phase have been grown on amorphous glass substrates by pulsed laser deposition method at various oxygen gas pressure. Wettability investigations have been carried out on these films. Consistent with our previous report [J. Phys. D: Appl. Phys. 41, 155308 (2008)] it has been observed that for nearly same surface roughness large contact angle or superhydrophobicity is present when sample has a pure single phase and lower contact angle or hydrophobicity when mixed phases were present. Structural characterizations suggest that in addition to roughness, pure phase film surface associated with hydrophobic sites and mixed phase film surface show association of both hydrophobic and hydrophilic sites, which might be inducing specific wetting character. UV treatment induces superhydrophilicity in the films. It was observed that UV irradiation causes nonequilibrium state on the TiO 2 surface, leading to changes in the electron density, which in turn produces decrement in the crystallinity and lattice expansion. Reversible changes in the wetting state on the pure phase surfaces were observed to be faster than those on the mixed phase surfaces. We tried to establish the possible relation between crystalline phases, chemical nature of surface on reversible wettability besides the main governing parameter viz. surface roughness.

  15. Effect of Sr doping on LaTiO3 thin films

    International Nuclear Information System (INIS)

    Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

    2005-01-01

    We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

  16. Characteristics of TiO_2/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

    International Nuclear Information System (INIS)

    Rahman, Rohanieza Abdul; Zulkefle, Muhammad Al Hadi; Abdullah, Wan Fazlida Hanim; Rusop, M.; Herman, Sukreen Hana

    2016-01-01

    In this study, titanium dioxide (TiO_2) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO_2/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO_2/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

  17. An efficient visible and UV-light-activated B–N-codoped TiO2 photocatalytic film for solar depollution prepared via a green method

    International Nuclear Information System (INIS)

    Xu Qingchi; Zhang Yan; He Ziming; Loo, Say Chye Joachim; Tan, Timothy Thatt Yang

    2012-01-01

    This work reports an efficient visible and UV-light-activated boron and nitrogen codoped TiO 2 porous film prepared via a “green” and direct coating approach. Such photocatalyst is highly promising for solar depollution application due to its efficient photocatalytic activities in both visible and UV spectrum. The preparation method avoids the use of organic solvents, which are usually more expensive and hazardous compared with water. Using stearic acid as the model organic pollutant, the visible-light photocatalytic activity of optimized porous B–N-codoped TiO 2 film (p-3B–N–TiO 2 ) is 3 times higher than that of porous N-doped TiO 2 (p-N–TiO 2 ) film, while its UV photocatalytic activity is almost double that of p-N–TiO 2 film and comparable to that of porous TiO 2 . The enhancement in photocatalytic activity is attributed to higher surface area due to the porous structure, improved visible-light absorption attributed to interstitially substituted boron atoms, and coexistence of boron and nitrogen dopants which may reduce Ti 3+ recombination centers.

  18. Dye-Sensitized Solar Cells with Anatase TiO2 Nanorods Prepared by Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Ming-Jer Jeng

    2013-01-01

    Full Text Available The hydrothermal method provides an effective reaction environment for the synthesis of nanocrystalline materials with high purity and well-controlled crystallinity. In this work, we started with various sizes of commercial TiO2 powders and used the hydrothermal method to prepare TiO2 thin films. We found that the synthesized TiO2 nanorods were thin and long when smaller TiO2 particles were used, while larger TiO2 particles produced thicker and shorter nanorods. We also found that TiO2 films prepared by TiO2 nanorods exhibited larger surface roughness than those prepared by the commercial TiO2 particles. It was found that a pure anatase phase of TiO2 nanorods can be obtained from the hydrothermal method. The dye-sensitized solar cells fabricated with TiO2 nanorods exhibited a higher solar efficiency than those fabricated with commercial TiO2 nanoparticles directly. Further, triple-layer structures of TiO2 thin films with different particle sizes were investigated to improve the solar efficiency.

  19. Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

    Science.gov (United States)

    Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

    2018-04-01

    Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

  20. Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Science.gov (United States)

    Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

    2015-12-01

    We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

  1. Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered Amorphous TiO2 Films

    OpenAIRE

    Chandra Sekhar, M.; Kondaiah, P.; Radha Krishna, B.; Uthanna, S.

    2013-01-01

    Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range 9 × 10−3–9 × 10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of 6×10−2 Pa was nearly stoichiometric. TiO2 films formed at...

  2. Plasmonic metamaterial-based chemical converted graphene/TiO2/Ag thin films by a simple spray pyrolysis technique

    Science.gov (United States)

    Kumar, Promod; Swart, H. C.

    2018-04-01

    Graphene based hybrid nanostructures have received special attention in both the scientific and technological development due to their unique physicochemical behavior, which make them attractive in various applications such as, batteries, supercapacitors, fuel cells, solar cells, photovoltaic devices and bio-sensors. In the present study, the role of plasmonic metamaterials in light trapping photovoltaics for inorganic semiconducting materials by a simple and low cost spray pyrolysis technique has been studied. The plasmonic metamaterials thin film has been fabricated by depositing chemically converted graphene (CCG) onto TiO2-Ag nanoparticles which has a low resistivity and a low electron-hole recombination probability. The localized surface plasmon resonance at the metal-dielectric interface for the Ag nanoparticles has been observed at 403 nm after depositing chemical converted graphene (CCG) on the TiO2-Ag thin film. The results suggest that the stacking order of the CCG/TiO2/Ag plasmonic metamaterials samples did not change the band gap of TiO2 while it changed the conductivity of the film. Thus the diffusion of the noble metals in the glass and TiO2 matrices based thin films can trap the light of a particular wavelength by mean of plasmonic resonance and may be useful for superior photovoltaic and optoelectronic applications.

  3. A comparison of light-coupling into high and low index nanostructured photovoltaic thin films

    Directory of Open Access Journals (Sweden)

    T. Pfadler

    2015-06-01

    Full Text Available Periodically structured electrodes are typically introduced to thin-film photovoltaics for the purpose of light management. Highly effective light-trapping and optimal in-coupling of light is crucial to enhance the overall device performance in such thin-film systems. Here, wavelength-scale structures are transferred via direct laser interference patterning to electron-selective TiO2 electrodes. Two representative thin-film solar cell architectures are deposited on top: an organic solar cell featuring blended P3HT:PCBM as active material, and a hybrid solar cell with Sb2S3 as inorganic active material. A direct correlation in the asymmetry in total absorption enhancement and in structure-induced light in-coupling is spectroscopically observed for the two systems. The structuring is shown to be beneficial for the total absorption enhancement if a high n active material is deposited on TiO2, but detrimental for a low n material. The refractive indices of the employed materials are determined via spectroscopic ellipsometry. The study outlines that the macroscopic Fresnel equations can be used to investigate the spectroscopically observed asymmetry in light in-coupling at the nanostructured TiO2 active material interfaces by visualizing the difference in reflectivity caused by the asymmetry in refractive indices.

  4. Synergistic effects for the TiO2/RuO2/Pt photodissociation of water

    Energy Technology Data Exchange (ETDEWEB)

    Blondel, G; Harriman, A; Williams, D

    1983-07-01

    Compressed discs of naked TiO2 or TiO2 coated with a thin film of a noble metal (e.g. Pt) do not photodissociate water upon illumination with UV light, but small amounts of H2 are generated if the TiO2 has been reduced in a stream of H2 at 600 C. Discs prepared from mixtures of TiO2/RuO2 facilitate the UV photodissociation of water into H2 and O2 although the yields are very low. When a thin (about 9 nm) film of Pt is applied to the TiO2/RuO2 discs, the yields of H2 and O2 observed upon irradiation with UV light are improved drastically. 25 references.

  5. Electrodeposition of flake-like Cu_2O on vertically aligned two-dimensional TiO_2 nanosheet array films for enhanced photoelectrochemical properties

    International Nuclear Information System (INIS)

    Yang, Lei; Zhang, Miao; Zhu, Kerong; Lv, Jianguo; He, Gang; Sun, Zhaoqi

    2017-01-01

    Highlights: • Flake-like Cu_2O/TNS with exposed {001} facets constructed p-n heterostructure. • The TNS arrays were used as starting substrates for Cu_2O growth. • The Cu_2O/TNS prepared at −0.4 V exhibits the best photoelectrochemical property. - Abstract: A novel Cu_2O/TNS composite structure of single crystal TiO_2 nanosheet (TNS) arrays decorated with flake-like Cu_2O were synthesized by a facile hydrothermal reaction followed by the electrodeposition process. The effects of deposition potential on the microstructure, morphology, and optical property of the thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV–vis spectrophotometer. When the deposition potential is higher than −0.4 V, peaks corresponding to Cu appear, meanwhile, flake-like Cu_2O become agglomerating, and transform into dense Cu_2O particles. Additionally, photoelectrochemical experiments indicate that the films deposited at −0.4 V show the lowest resistivity and highest exciton separation efficiency. This enhanced photoelectrochemical properties can be explained by synergistic effect of p-type flake-like Cu_2O and n-type TiO_2 heterojunctions combined with two-dimensional TiO_2 nanosheet with exposed highly reactive {001} facets.

  6. Density, thickness and composition measurements of TiO2 -SiO2 thin films by coupling X-ray reflectometry, ellipsometry and electron probe microanalysis-X

    International Nuclear Information System (INIS)

    Hodroj, A.; Roussel, H.; Crisci, A.; Robaut, F.; Gottlieb, U.; Deschanvres, J.L.

    2006-01-01

    Mixed TiO 2 -SiO 2 thin films were deposited by aerosol atmospheric CVD method by using di-acetoxi di-butoxi silane (DADBS) and Ti tetra-butoxide as precursors. By varying the deposition temperatures between 470 and 600 deg. C and the ratios between the Si and Ti precursors (Si/Ti) from 2 up to 16, films with different compositions and thicknesses were deposited. The coupled analysis of the results of different characterisation methods was used in order to determine the variation of the composition, the thickness and the density of the films. First EPMA measurements were performed at different acceleration voltages with a Cameca SX50 system. By analysing, with specific software, the evolution of the intensity ratio I x /I std versus the voltage, the composition and the mass thickness (product of density by the thickness) were determined. In order to measure independently the density, X-ray reflectometry experiments were performed. By analysing the value of the critical angle and the Kiessig fringes, the density and the thickness of the layers were determined. The refractive index and the thickness of the films were also measured by ellipsometry. By assuming a linear interpolation between the index value of the pure SiO 2 and TiO 2 films, the film composition was deduced from the refractive index value. XPS measurements were also performed in order to obtain an independent value of the composition. A good agreement between the ways to measure the density is obtained

  7. Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

    Science.gov (United States)

    Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

    2017-10-01

    Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

  8. Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

    Science.gov (United States)

    Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan

    2015-01-01

    Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.

  9. Nano-crystalline thin and nano-particulate thick TiO2 layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

    International Nuclear Information System (INIS)

    Das, P.; Sengupta, D.; Kasinadhuni, U.; Mondal, B.; Mukherjee, K.

    2015-01-01

    Highlights: • Thin TiO 2 layer is deposited on conducting substrate using sol–gel based dip coating. • TiO 2 nano-particles are synthesized using hydrothermal route. • Thick TiO 2 particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO 2 passivation layer is introduced between the mesoporous TiO 2 nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effect of passivation layer, other two DSSCs are also developed separately using TiO 2 nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO 2 compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO 2 layer in between the mesoporous TiO 2 nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons

  10. Optical properties of titanium di-oxide thin films prepared by dip coating method

    Science.gov (United States)

    Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar

    2018-05-01

    Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.

  11. Low-temperature sputtering of crystalline TiO2 films

    International Nuclear Information System (INIS)

    Musil, J.; Herman, D.; Sicha, J.

    2006-01-01

    This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

  12. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    Science.gov (United States)

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  13. Silver loaded WO3−x/TiO2 composite multifunctional thin films

    International Nuclear Information System (INIS)

    Dunnill, Charles W.; Noimark, Sacha; Parkin, Ivan P.

    2012-01-01

    Multifunctional WO 3−x –TiO 2 composite thin films have been prepared by sol–gel synthesis and shown to be good visible light photocatalysts whilst retaining a desirable underlying blue colouration. The WO 3−x –TiO 2 composite thin films were further enhanced using silver nanoparticles synthesised in-situ on the surface from the photo-degradation of silver nitrate solution. Thin films were characterised using X-ray diffraction, Raman, Scanning electron microscopy and UV–visible spectroscopy and shown to photo degrade stearic acid, using white light λ = 420–800 nm. - Highlights: ► WO 3−X TiO 2 composite thin films were synthesised by sol–gel methods. ► Blue tinted glass is desirable for the value added glass industry. ► Silver nanoparticle island formation enhances the activity of the films. ► Blue tinted “value added” coated glass is now possible.

  14. TiO2 and SiC nanostructured films, organized CNT structures

    Indian Academy of Sciences (India)

    sized nanostructured TiO2 films through hydrolysis of titanium tetra-isopropoxide. (TTIP) [9 ... structured TiO2 as a photocatalyst is as follows [15]:. TiO2(ns) ... The deposited films were easily detached from the silica tube and subjected to. SEM.

  15. Study of Optical Humidity Sensing Properties of Sol-Gel Processed TiO2 and MgO Films

    Directory of Open Access Journals (Sweden)

    B. C. Yadav

    2007-04-01

    Full Text Available Paper reports a comparative study of humidity sensing properties of TiO2 and MgO films fabricated by Sol-gel technique using optical method. One sensing element of the optical humidity sensor presented here consists of rutile structured two-layered TiO2 thin film deposited on the base of an isosceles glass prism. The other sensing element consists of a film of MgO deposited by same technique on base of the prism. Light from He-Ne laser enters prism from one of refracting faces of the prism and gets reflected from the glass-film interface, before emerging out from its other isosceles face. This emergent beam is allowed to pass through an optical fiber. Light coming out from the optical fiber is measured with an optical power meter. Variations in the intensity of light caused by changes in humidity lying in the range 5%RH to 95%RH have been recorded. MgO film shows better sensitivity than TiO2 film.

  16. Hybrid thin films based on bilayer heterojunction of titania nanocrystals/polypyrrole/natural dyes (Kappaphycus alvarezii) materials

    Science.gov (United States)

    Ghazali, Salmah Mohd; Salleh, Hasiah; Dagang, Ahmad Nazri; Ghazali, Mohd Sabri Mohd; Ali, Nik Aziz Nik; Rashid, Norlaily Abdul; Kamarulzaman, Nurul Huda; Ahmad, Wan Almaz Dhafina Che Wan

    2017-09-01

    In this research, hybrid thin films which consist of a combination of organic red seaweed (RS) (Kappaphycus alvarezii) and polypyrrole (PPy) with inorganic titania nanocrystals (TiO2 NCs) materials were fabricated. These hybrid thin films were fabricated accordingly with bilayer heterojunction of ITO/TiO2 NCs/PPy/RS via electrochemical method using Electrochemical Impedance Spectroscopy (EIS). The effect of number of scans (thickness) of titania on optical and electrical properties of hybrid thin films were studied. TiO2 NCs function as an electron acceptor and electronic conductor. Meanwhile, PPy acts as holes conductor and RS dye acts as a photosensitizer enhances the optical and electrical properties of the thin films. The UV absorption spectrum of TiO2 NCs, PPy and RS are characterized by UV-Visible spectroscopy, while the functional group of RS was characterized by Fourier transform infrared spectroscopy (FTIR). The UV-Vis spectra showed that TiO2 NCs, PPy and RS were absorbed over a wide range of light spectrum which were 200-300 nm, 300-900 nm and 250-900 nm; respectively. The FTIR spectra of the RS showed the presence of hydroxyl group which was responsible for a good sensitizer for these hybrid solar cells. The electrical conductivity of these hybrid thin films were measured by using four point probes. The electrical conductivity of ITO/ (1)TiO2 NCs/PPy/RS thin film under the radiation of 100 Wm-2 was 0.062 Scm-1, hence this hybrid thin films can be applied in solar cell application.

  17. Surface Structure and Photocatalytic Activity of Nano-TiO2 Thin Film

    Science.gov (United States)

    Controlled titanium dioxide (TiO2) thin films were deposited on stainless steel surfaces using flame aerosol synthetic technique, which is a one-step coating process, that doesn’t require further calcination. Solid state characterization of the coatings was conducted by different...

  18. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  19. Synthesis, Characterization and Sonocatalytic Activity of Co/N/Er3+ : Y3Al5O12 /TiO2 Film for the Degradation of Organic Dyes

    Directory of Open Access Journals (Sweden)

    Wang L.

    2015-07-01

    Full Text Available The sonocatalytic degradation of organic dyes (C.I. 50040, C.I. Reactive Red 1, C.I. Acid Orange 7 catalysed by Co/N/Er3+ : Y3Al5O12/TiO2 films was studied. For the preparation of Co/N/Er3+ : Y3Al5O12/TiO2 films, the sol-gel coating process was used. The phase composition, morphology, precursor at different temperatures and emitting light properties of the calcined powders were analysed by X-ray diffraction (XRD, absorption spectra and upconversion emission spectra. The X-ray diffraction of powder samples of Co/N/Er3+ : Y3Al5O12/TiO2 took on anatase mine peaks and upconversion luminous agent, respectively. Analysis of absorption spectra of amorphous Co/N/Er3+ : Y3Al5O12/TiO2 showed that doping N stretching vibration peak of water or hydroxyl adsorption, Co2+ ion had very strong absorption in 1.0–1.7 μm wavelength range, the transition luminescence of Er3+ ions was just on Co2+ ions absorption band. The emission spectrum indicated that Co/N/Er3+ : Y3Al5O12/TiO2 could launch green 500–560 nm and red 650–700 nm, 525, 550 and 660 nm peaks corresponding to 2H11/2, 4S3/2 → 4I15/2 and 4H9/2 → 4I15/2 transition of Er3+. Doping Co and N enhanced the upconversion luminescence and absorption effect. Sonocatalytic degradation effect of organic dyes loading Co/N/Er3+ : Y3Al5O12/TiO2 was better when ultrasonic intensity was equal to 15 W cm–2. The degradation ratios of aqueous solutions of these three kinds of organic dyes by ultrasonic irradiation were obviously lower than by ultrasonic irradiation together with Co/N/Er3+ : Y3Al5O12/TiO2 films in the same conditions. Degradation kinetics of organic dyes by ultrasonic irradiation and by ultrasonic irradiation cooperating with Co/N/Er3+ : Y3Al5O12/TiO2 films followed the first-order reaction.

  20. Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering

    Science.gov (United States)

    Abdullah, S. A.; Sahdan, M. Z.; Nafarizal, N.; Saim, H.; Bakri, A. S.; Cik Rohaida, C. H.; Adriyanto, F.; Sari, Y.

    2018-04-01

    This paper highlights the defect levels using photoluminescence spectroscopy of TiO2 thin films. The TiO2 were deposited by Magnetron Sputtering system with 200, 300, 400, and 500 °C substrate temperature on microscope glass substrate. The PL result shows profound effect of various substrate temperatures to defect levels of oxygen vacancies and Ti3+ at titanium interstitial site. Increasing temperature would minimize the oxygen vacancy defect, however Ti3+ shows otherwise. Green region of PL consist of trapped hole for oxygen vacancy, while red region of PL is trapped electron associated to structural defect Ti3+. Green PL is dominant peak at temperature 200 °C, indicating that oxygen vacancy is the main defect at this temperature. However, PL peak shows slightly same value for others samples indicating that the temperature did not give high influence to other level of defect after 200 °C.

  1. Adsorption Equilibrium and Kinetics of Gardenia Blue on TiO2 Photoelectrode for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Tae-Young Kim

    2014-01-01

    Full Text Available Nanostructured porous TiO2 paste was deposited on the FTO conductive glass using squeeze printing technique in order to obtain a TiO2 thin film with a thickness of 10 μm and an area of 4 cm2. Gardenia blue (GB extracted from Gardenia jasminode Ellis was employed as the natural dye for a dye-sensitized solar cell (DSSC. Adsorption studies indicated that the maximum adsorption capacity of GB on the surface of TiO2 thin film was approximately 417 mg GB/g TiO2 photoelectrode. The commercial and natural dyes, N-719 and GB, respectively, were employed to measure the adsorption kinetic data, which were analyzed by pseudo-first-order and pseudo-second-order models. The energy conversion efficiency of the TiO2 electrode with successive adsorptions of GB dye was about 0.2%.

  2. Bandtail characteristics in InN thin films

    International Nuclear Information System (INIS)

    Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

    2002-01-01

    The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

  3. EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

    Directory of Open Access Journals (Sweden)

    Khairul Aimi Yusof

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

  4. Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

    International Nuclear Information System (INIS)

    Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

    2016-01-01

    Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

  5. Production and Characterization of (004) Oriented Single Anatase TiO2 Films

    Science.gov (United States)

    Atay, Ferhunde; Akyuz, Idris; Cergel, Muge Soyleyici; Erdogan, Banu

    2018-02-01

    Highly (004) oriented anatase TiO2 films have been successfully obtained by an inexpensive ultrasonic spray pyrolysis technique at low substrate temperatures and without additional annealing. X-ray diffraction analysis, ultraviolet-visible spectroscopy and field emission scanning electron microscopy were used to analyze the structural, optical and surface properties of the films. By using the less reported TiCl4 solution, the optical band gap values falling into the visible region (between 2.70 eV and 2.92 eV) have been obtained for all films. Spectroscopic ellipsometry technique has been used to determine the dispersive refractive index and extinction coefficient of TiO2 films. Possible electrical conduction mechanisms in TiO2 films have been examined using temperature dependent conductivity measurements in the temperature range of 78-300 K. At room temperature, electrical resistivity values of TiO2 films change between 1.68 × 104 Ω cm and 5.88 × 104 Ω cm. Considering the analyzed parameters with respect to substrate temperature, this work refers to the properties of anatase TiO2 films that are strongly correlated to the growth direction, namely (004). As a result, (004) oriented anatase TiO2 films with appropriate optical band gap values are promising materials for technological applications, especially for photocatalysts.

  6. Layer-by-layer assembled TiO2 films with high ultraviolet light-shielding property

    International Nuclear Information System (INIS)

    Li, Xiaozhou; Wang, Lin; Pei, Yuxin; Jiang, Jinqiang

    2014-01-01

    Ultraviolet (UV) B is hazardous to human, plants and animals. With the rapid growth of ozone holes over the earth, the exploration of optical materials that can cut off harmful UV radiation is important. In this work, fusiform TiO 2 nanoparticles were synthesized by a hydrothermal synthesis method. The thin films assembled with TiO 2 nanoparticles and oppositely charged polyelectrolytes were fabricated via a layer-by-layer assembly method. The fabrication of poly(ethylene imine) (PEI)/TiO 2 multilayer films was verified by ultraviolet–visible spectra measurements, scanning electron microscopy and atomic force microscopy. The as-prepared PEI/TiO 2 multilayer films can effectively absorb harmful UVB light and filter off visible light. Most importantly, the PEI/TiO 2 films can be deposited directly on various kinds of hydrophilic substrates such as quartz, glass, silicon and hydrophobic substrates such as polystyrene, polypropylene, polyethylene and polymethyl methacrylate when the hydrophilic substrates were modified to obtain a hydrophilic surface. - Highlights: • PEI/TiO 2 films were fabricated via a layer-by-layer self-assembly method. • The films could effectively absorb harmful UVB light and filter off visible light. • The films could deposit directly on either hydrophilic or hydrophobic substrates

  7. Evolution of structural and magnetic properties of Co-doped TiO2 thin films irradiated with 100 MeV Ag7+ ions

    International Nuclear Information System (INIS)

    Mohanty, P; Singh, V P; Rath, Chandana; Mishra, N C; Ojha, S; Kanjilal, D

    2014-01-01

    In continuation to our earlier studies where we have shown room temperature ferromagnetism observed in TiO 2 and Co-doped TiO 2 (CTO) thin films independent of their phase (Mohanty et al 2012 J. Phys. D: Appl. Phys. 45 325301), here the modifications in structure and magnetic properties in CTO thin films using 100 MeV Ag 7+ ion irradiation are reported. Owing to the important role of defects in tailoring the magnetic properties of the material, we vary the ion fluence from 5 × 10 11 to 1 × 10 12  ions cm −2 to create post-deposition defects. While the film deposited under 0.1 mTorr oxygen partial pressure retains its crystallinity showing radiation-resistant behaviour even at a fluence of 1 × 10 12  ions cm −2 , films deposited under 1 to 300 mTorr oxygen partial pressure becomes almost amorphous at the same fluence. Using Poisson's law, the diameter of the amorphized region surrounding the ion path is calculated to be ∼4.2 nm from the x-ray diffraction peak intensity ((1 1 0) for rutile phase) as a function of ion fluence. The saturation magnetization (M s ) decreases exponentially similar to the decrease in x-ray peak intensity with fluence, indicating magnetic disordered region surrounding the ion path. The diameter of the magnetic disordered region is found to be ∼6.6 nm which is larger than the diameter of the amorphized latent track. Therefore, it is confirmed that swift heavy ion irradiation induces a more significant magnetic disorder than the structural disorder. (paper)

  8. PHOTO-ELECTROCHEMICAL QUANTUM EFFICIENCY OF TiO2 THIN FILMS : EFFECT OF CRISTAL STRUCTURE, PLASMA HYDROGENATION AND SURFACE PHOTOETCHING

    Directory of Open Access Journals (Sweden)

    E TEYAR

    2007-12-01

    Full Text Available The use of semi-conducting materials in the photoelectrochemical detoxification of water became a very important research field. For this purpose, TiO2 nanostructures thin films with size of 18 nm to 45nm have been synthesized at low temperature. It is found by means of cyclic voltametry and coulometry measurements that the best photoelectrochemical quantum efficiency under UV monochromatic light with a wavelength of 365 nm and a solution of NaOH 0.1N is obtained in the case of thermal oxidation deposition method which can reach 28% compared to ultrasonic spray and dip coating methods of which the quantum is less than 20%. The crystal structure has an influence on the photo-degradation of methanol. The crystal structure which is recommended for this task is the anatase one, especially in the dipping case when the quantum increases after addition of methanol more than twice compared to the solution of NaOH without methanol. The photoelectrochemical quantum efficiency of these films is related to the number of dips and annealing under air at 550°C during one hour. The annealing has no effect on the quantum efficiency of the films, but decreases there photocatalytic activity as showed by the measure of the photocurrent related to methanol photodegradation. The annealing has no effect on the crystal structure of the material. The impedance spectroscopy of six dips deposited films with and without methanol shows that the annealing increases the doping and weakly decreases the film quantum efficiency. This implies, the importance of surface morphology which the rough is decreasing as showed by scanning electron microscopy. The effect of the precursor concentration in ethanol have been investigated by using films, synthesized at T=550°C. The quantum efficiency increases weakly according the precursor concentration. It tends towards a saturation at great concentrations of precursor. In Na OH with methanol added, it passes by a maximum at

  9. Nb and Ta Co-Doped TiO2 Transparent Conductive Thin Films by Magnetron Sputtering: Fabrication, Structure, and Characteristics

    Science.gov (United States)

    Liu, Yang; Peng, Qian; Qiao, Yadong; Yang, Guang

    2018-06-01

    Nb and Ta co-doped anatase titanium dioxide (NTTO) nanocrystalline thin films were deposited on quartz and Si (100) substrates by RF magnetron sputtering. The influence of RF power on the growth, structure, morphology, and properties of the samples are discussed in detail. X-ray diffraction measurements show that the films are polycrystalline with anatase tetragonal structure, which is further confirmed by Raman spectroscopy analysis. Meanwhile, Raman spectroscopy results indicate that the peak width of E g(1) mode, which is directly correlated to the carrier density, changes obviously with RF power. It is found that the substitution of Nb5+ and Ta5+ at Ti site is significantly improved with the increase of RF power from 150 W to 210 W. For the sample deposited at 210 W, the optical transmittance is above 82% in the visible range and the electrical resistivity is as low as 1.3 × 10-3 Ω cm with carrier density of 1.1 × 1021 cm-3 and Hall mobility of 4.5 cm2 V-1 s-1. The optical and electrical properties of NTTO thin films can be compared to those of Nb or Ta doped anatase TiO2. However, co-doping with Nb and Ta gives a possible platform to complement the limitations of each individual dopant.

  10. Preparation of acid salt M(HPO4)2.nH2 O thin films

    International Nuclear Information System (INIS)

    Kassem, M.

    1998-01-01

    The layered crystalline powders of Titanium Phosphate with the formula Ti(HPO 4 ) 2 .nH 2 O (phase α when n=2, phase γ when n=1) were prepared by reaction of titanium three chloride with phosphoric acid under specific thermal conditions. Starting from these powders thin films have been prepared using some methods such as: Thermal evaporation, sol-gel and vapor phase transport. The results of X-ray diffraction and differential thermal deferential analysis show that the temperature plays an important role in the determination of the crystalline phases and the phase transition of the prepared films. (author). 7 refs

  11. Nanostructured Mesoporous Titanium Dioxide Thin Film Prepared by Sol-Gel Method for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Yu-Chang Liu

    2011-01-01

    Full Text Available Titanium dioxide (TiO2 paste was prepared by sol-gel and hydrothermal method with various precursors. Nanostructured mesoporous TiO2 thin-film back electrode was fabricated from the nanoparticle colloidal paste, and its performance was compared with that made of commercial P25 TiO2. The best performance was demonstrated by the DSSC having a 16 μm-thick TTIP-TiO2 back electrode, which gave a solar energy conversion efficiency of 6.03%. The ability of stong adhesion on ITO conducting glass substrate and the high surface area are considered important characteristics of TiO2 thin film. The results show that a thin film with good adhesion can be made from the prepared colloidal paste as a result of alleviating the possibility of electron transfer loss. One can control the colloidal particle size from sol-gel method. Therefore, by optimizing the preparation conditions, TiO2 paste with nanoparticle and narrow diameter distribution was obtained.

  12. Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO2 nanoparticles on a Si substrate

    Directory of Open Access Journals (Sweden)

    Urmas Joost

    2017-01-01

    Full Text Available Colorimetric gas sensing is demonstrated by thin films based on ultrasmall TiO2 nanoparticles (NPs on Si substrates. The NPs are bound into the film by p-toluenesulfonic acid (PTSA and the film is made to absorb volatile organic compounds (VOCs. Since the color of the sensing element depends on the interference of reflected light from the surface of the film and from the film/silicon substrate interface, colorimetric detection is possible by the varying thickness of the NP-based film. Indeed, VOC absorption causes significant swelling of the film. Thus, the optical path length is increased, interference wavelengths are shifted and the refractive index of the film is decreased. This causes a change of color of the sensor element visible by the naked eye. The color response is rapid and changes reversibly within seconds of exposure. The sensing element is extremely simple and cheap, and can be fabricated by common coating processes.

  13. Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films.

    Science.gov (United States)

    Kaspar, Tiffany C; Hong, Seungbum; Bowden, Mark E; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R; Comes, Ryan B; Ramuhalli, Pradeep; Henager, Charles H

    2018-02-14

    Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200 °C due to the low Curie temperature of the piezoelectric material. Strengthening the piezoelectric coupling of high-temperature piezoelectric materials, such as La 2 Ti 2 O 7 (LTO), would allow sensors to operate across a broad temperature range. The crystalline orientation and piezoelectric coupling direction of LTO thin films can be controlled by epitaxial matching to SrTiO 3 (001), SrTiO 3 (110), and rutile TiO 2 (110) substrates via pulsed laser deposition. The structure and phase purity of the films are investigated by x-ray diffraction and scanning transmission electron microscopy. Piezoresponse force microscopy is used to measure the in-plane and out-of-plane piezoelectric coupling in the films. The strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO 2 (110) results in epitaxial La 2/3 TiO 3 , an orthorhombic perovskite of interest as a microwave dielectric material and an ion conductor. La 2/3 TiO 3 can be difficult to stabilize in bulk form, and epitaxial stabilization on TiO 2 (110) is a promising route to realize La 2/3 TiO 3 for both fundamental studies and device applications. Overall, these results confirm that control of the crystalline orientation of epitaxial LTO-based materials can govern the resulting functional properties.

  14. Influence of substrate on structural, morphological and optical properties of TiO2 thin films deposited by reaction magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Xinghua Zhu

    2017-12-01

    Full Text Available Titanium dioxide (TiO2 films have been prepared by DC reaction magnetron sputtering technique on different substrates (glass, SiO2, platinum electrode-Pt, Silicon-Si. X-ray diffraction (XRD patterns showed that all TiO2 films were grown along the preferred orientation of (110 plane. Samples on Si and Pt substrates are almost monophasic rutile, however, samples on glass and SiO2 substrates accompanied by a weak anatase structure. Atomic force microscopy (AFM images revealed uniform grain distribution except for films on Pt substrates. Photoluminescence (PL spectra showed obvious intrinsic emission band, but films on glass was accompanied by a distinct defect luminescence region. Raman spectroscopy suggested that all samples moved to high wavenumbers and films on glass moved obviously.

  15. Improved performance of dye-sensitized solar cell based on TiO_2 photoanode with FTO glass and film both treated by TiCl_4

    International Nuclear Information System (INIS)

    Li, Jinlun; Zhang, Haiyan; Wang, Wenguang; Qian, Yannan; Li, Zhenghui

    2016-01-01

    The dye-sensitized solar cell (DSSC) based on TiO_2 photoanode with FTO glass and TiO_2 film co-treated by TiCl_4 were fabricated. The effects of TiCl_4 treatment on the photovoltaic performance of the DSSCs were investigated. TiCl_4 treatment of the FTO glass resulted in the formation of a compact TiO_2 thin layer on its surface, which could increase the electron collection efficiency. Meanwhile, TiCl_4 treatment of the TiO_2 film could fill gaps between nanoparticles in the TiO_2 film, leading to better electron transfer. These advantages make the DSSC exhibit a highest conversion efficiency of 3.34% under a simulated solar irradiation with an intensity of 100 mW/cm"2 (1 sun), increased by 38% compared with that of the untreated DSSC.

  16. Photocatalytic properties of P25-doped TiO2 composite film synthesized via sol-gel method on cement substrate.

    Science.gov (United States)

    Guo, Xiang; Rao, Lei; Wang, Peifang; Wang, Chao; Ao, Yanhui; Jiang, Tao; Wang, Wanzhong

    2018-04-01

    TiO 2 films have received increasing attention for the removal of organic pollutants via photocatalysis. To develop a simple and effective method for improving the photodegradation efficiency of pollutants in surface water, we herein examined the preparation of a P25-TiO 2 composite film on a cement substrate via a sol-gel method. In this case, Rhodamine B (RhB) was employed as the target organic pollutant. The self-generated TiO 2 film and the P25-TiO 2 composite film were characterized by X-ray diffraction (XRD), N 2 adsorption/desorption measurements, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and diffuse reflectance spectroscopy (DRS). The photodegradation efficiencies of the two films were studied by RhB removal in water under UV (ultraviolet) irradiation. Over 4day exposure, the P25-TiO 2 composite film exhibited higher photocatalytic performance than the self-generated TiO 2 film. The photodegradation rate indicated that the efficiency of the P25-TiO 2 composite film was enhanced by the addition of the rutile phase Degussa P25 powder. As such, cooperation between the anatase TiO 2 and rutile P25 nanoparticles was beneficial for separation of the photo-induced electrons and holes. In addition, the influence of P25 doping on the P25-TiO 2 composite films was evaluated. We found that up to a certain saturation point, increased doping enhanced the photodegradation ability of the composite film. Thus, we herein demonstrated that the doping of P25 powders is a simple but effective strategy to prepare a P25-TiO 2 composite film on a cement substrate, and the resulting film exhibits excellent removal efficiency in the degradation of organic pollutants. Copyright © 2017. Published by Elsevier B.V.

  17. Sensitive determination of the Young's modulus of thin films by polymeric microcantilevers

    DEFF Research Database (Denmark)

    Colombi, Paolo; Bergese, Paolo; Bontempi, Elza

    2013-01-01

    A method for the highly sensitive determination of the Young's modulus of TiO2 thin films exploiting the resonant frequency shift of a SU-8 polymer microcantilever (MC) is presented. Amorphous TiO2 films with different thickness ranging from 10 to 125 nm were grown at low temperature (90 °C......) with subnanometer thickness resolution on SU-8 MC arrays by means of atomic layer deposition. The resonant frequencies of the MCs were measured before and after coating and the elastic moduli of the films were determined by a theoretical model developed for this purpose. The Young's modulus of thicker TiO2 films...... (>75 nm) was estimated to be about 110 GPa, this value being consistent with the value of amorphous TiO2. On the other hand we observed a marked decrease of the Young's modulus for TiO2 films with a thickness below 50 nm. This behavior was found not to be related to a decrease of the film mass density...

  18. Enhanced interfacial contact between PbS and TiO2 layers in quantum dot solar cells using 2D-arrayed TiO2 hemisphere nanostructures

    Science.gov (United States)

    Lee, Wonseok; Ryu, Ilhwan; Lee, Haein; Yim, Sanggyu

    2018-02-01

    Two-dimensionally (2D) arrayed hemispherical nanostructures of TiO2 thin films were successfully fabricated using a simple procedure of spin-coating or dip-coating TiO2 nanoparticles onto 2D close-packed polystyrene (PS) nanospheres, followed by PS extraction. The nanostructured TiO2 film was then used as an n-type layer in a lead sulfide (PbS) colloidal quantum dot solar cell. The TiO2 nanostructure could provide significantly increased contacts with subsequently deposited PbS quantum dot layer. In addition, the periodically arrayed nanostructure could enhance optical absorption of the cell by redirecting the path of the incident light and increasing the path length passing though the active layer. As a result, the power conversion efficiency (PCE) reached 5.13%, which is approximately a 1.7-fold increase over that of the control cell without nanostructuring, 3.02%. This PCE enhancement can mainly be attributed to the increase of the short-circuit current density from 19.6 mA/cm2 to 30.6 mA/cm2, whereas the open-circuit voltage and fill factor values did not vary significantly.

  19. Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

    Science.gov (United States)

    Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

    2018-04-01

    Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

  20. The Recovery of a Magnetically Dead Layer on the Surface of an Anatase (Ti,CoO2 Thin Film via an Ultrathin TiO2 Capping Layer

    Directory of Open Access Journals (Sweden)

    Thantip S. Krasienapibal

    2017-03-01

    Full Text Available The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2−δ (001 epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.

  1. Impedance spectroscopic and dielectric analysis of Ba0.7Sr0.3TiO3 thin films

    International Nuclear Information System (INIS)

    Rouahi, A.; Kahouli, A.; Sylvestre, A.; Defaÿ, E.; Yangui, B.

    2012-01-01

    Highlights: ► The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba 0.7 Sr 0.3 TiO 3 . ► The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. ► The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. ► The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba 0.7 Sr 0.3 TiO 3 thin film with Pt/BST/Pt/TiO 2 /SiO 2 structure was prepared by ion beam sputtering. The film was post annealed at 700 °C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1–10 5 Hz] at different temperatures [175–350 °C]. The Nyquist plots (Z″ vs . Z′) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z″ and M″ are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M ″ /M ″ max shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

  2. Nano-structure TiO2 film coating on 316L stainless steel via sol-gel technique for blood compatibility improvement

    Directory of Open Access Journals (Sweden)

    Mohammadreza Foruzanmehr

    2014-04-01

    Full Text Available   Objective(s: Titanium oxides are known to be appropriate hemocompatible materials which are suggested as coatings for blood-contacting devices. Little is known about the influence of nanometric crystal structure, layer thickness, and semiconducting characteristics of TiO2 on blood hemostasis.   Materials and Methods: Having used sol-gel dip coating method in this study, TiO2 thin films were deposited on nano-scale electro-polished stainless steel 316L with 1 to 5 nano-sized layers. Surface morphology and structure of the film were studied with X-ray diffraction and atomic force microscopy. Blood compatibility was also determined by measuring the platelet activation (CD62P expression, platelet adhesion (Scanning Electron Microscopy, and the blood clotting time on these samples. Results: The films were compact and smooth and existed mainly in the form of anatase. By increasing the number of TiO2 thin layer, clotting time greatly extended, and the population of activated platelet and P-selectine expression changed according to the surface characteristics of each layer. Conclusion: The findings revealed that stainless steel 316L coated with nano-structured TiO2 layer improved blood compatibility, in terms of both blood platelet activity and coagulation cascade, which can decrease the thrombogenicity of blood contacting devices which were made from stainless steel.

  3. The properties of transparent TiO2 films for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Sung-Ho Park

    2017-08-01

    Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

  4. Temperature field analysis of single layer TiO2 film components induced by long-pulse and short-pulse lasers

    International Nuclear Information System (INIS)

    Wang Bin; Zhang Hongchao; Qin Yuan; Wang Xi; Ni Xiaowu; Shen Zhonghua; Lu Jian

    2011-01-01

    To study the differences between the damaging of thin film components induced by long-pulse and short-pulse lasers, a model of single layer TiO 2 film components with platinum high-absorptance inclusions was established. The temperature rises of TiO 2 films with inclusions of different sizes and different depths induced by a 1 ms long-pulse and a 10 ns short-pulse lasers were analyzed based on temperature field theory. The results show that there is a radius range of inclusions that corresponds to high temperature rises. Short-pulse lasers are more sensitive to high-absorptance inclusions and long-pulse lasers are more easily damage the substrate. The first-damage decision method is drawn from calculations.

  5. Flexible free-standing TiO2/graphene/PVdF films as anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Ren, H.M.; Ding, Y.H.; Chang, F.H.; He, X.; Feng, J.Q.; Wang, C.F.; Jiang, Y.; Zhang, P.

    2012-01-01

    Highlights: ► Flexible TiO 2 /graphene electrode was prepared by a solvent evaporation technique. ► PVdF was used as substance to support the TiO 2 /graphene active materials. ► The flexible films can be employed as anode materials for Li-ion battery. - Abstract: Graphene composites were prepared by hydrothermal method using titanium dioxide (TiO 2 ) adsorbed graphene oxide (GO) sheets as precursors. Free-standing hybrid films for lithium-ion batteries were prepared by adding TiO 2 /graphene composites to the polyvinylidene fluoride (PVdF)/N-methyl-2-pyrrolidone (NMP) solution, followed by a solvent evaporation technique. These films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM) and various electrochemical techniques. Flexible films show an excellent cycling performance, which was attributed to the interconnected graphene conducting network, which depressed the increasing of electric resistance during the cycling.

  6. Influence of different TiO2 blocking films on the photovoltaic performance of perovskite solar cells

    Science.gov (United States)

    Zhang, Chenxi; Luo, Yudan; Chen, Xiaohong; Ou-Yang, Wei; Chen, Yiwei; Sun, Zhuo; Huang, Sumei

    2016-12-01

    Organolead trihalide perovskite materials have been successfully used as light absorbers in efficient photovoltaic (PV) cells. Cell structures based on mesoscopic metal oxides and planar heterojunctions have already demonstrated very impressive and brisk advances, holding great potential to grow into a mature PV technology. High power conversion efficiency (PCE) values have been obtained from the mesoscopic configuration in which a few hundred nano-meter thick mesoporous scaffold (e.g. TiO2 or Al2O3) infiltrated by perovskite absorber was sandwiched between the electron and hole transport layers. A uniform and compact hole-blocking layer is necessary for high efficient perovskite-based thin film solar cells. In this study, we investigated the characteristics of TiO2 compact layer using various methods and its effects on the PV performance of perovskite solar cells. TiO2 compact layer was prepared by a sol-gel method based on titanium isopropoxide and HCl, spin-coating of titanium diisopropoxide bis (acetylacetonate), screen-printing of Dyesol's bocking layer titania paste, and a chemical bath deposition (CBD) technique via hydrolysis of TiCl4, respectively. The morphological and micro-structural properties of the formed compact TiO2 layers were characterized by scanning electronic microscopy and X-ray diffraction. The analyses of devices performance characteristics showed that surface morphologies of TiO2 compact films played a critical role in affecting the efficiencies. The nanocrystalline TiO2 film deposited via the CBD route acts as the most efficient hole-blocking layer and achieves the best performance in perovskite solar cells. The CBD-based TiO2 compact and dense layer offers a small series resistance and a large recombination resistance inside the device, and makes it possible to achieve a high power conversion efficiency of 12.80%.

  7. Enhanced electrochromic properties of TiO2 nanoporous film prepared based on an assistance of polyethylene glycol

    Science.gov (United States)

    Xu, Shunjian; Luo, Xiaorui; Xiao, Zonghu; Luo, Yongping; Zhong, Wei; Ou, Hui; Li, Yinshuai

    2017-01-01

    Polyethylene glycol (PEG) was employed as pore-forming agent to prepare TiO2 nanoporous film based on spin-coating a TiO2 nanoparticle mixed paste on fluorine doped tin oxide (FTO) glass. The electrochromic and optical properties of the obtained TiO2 film were investigated by cyclic voltammetry (CV), chronoamperometry (CA) and UV-Vis spectrophotometer. The results show that the PEG in the mixed paste endows the TiO2 film with well-developed porous structure and improves the uniformity of the TiO2 film, which are helpful for the rapid intercalation and extraction of lithium ions within the TiO2 film and the strengthening of the diffuse reflection of visible light in the TiO2 film. As a result, the TiO2 film derived from the mixed paste with PEG displays higher electrochemical activity and more excellent electrochromic performances compared with the TiO2 film derived from the mixed paste without PEG. The switching times of coloration/bleaching are respectively 10.16/5.65 and 12.77/6.13 s for the TiO2 films with PEG and without PEG. The maximum value of the optical contrast of the TiO2 film with PEG is 21.2% while that of the optical contrast of the TiO2 film without PEG is 14.9%. Furthermore, the TiO2 film with PEG has better stability of the colored state than the TiO2 film without PEG.

  8. Thermal Vapor Deposition and Characterization of Polymer-Ceramic Nanoparticle Thin Films and Capacitors

    Science.gov (United States)

    Iwagoshi, Joel A.

    Research on alternative energies has become an area of increased interest due to economic and environmental concerns. Green energy sources, such as ocean, wind, and solar power, are subject to predictable and unpredictable generation intermittencies which cause instability in the electrical grid. This problem could be solved through the use of short term energy storage devices. Capacitors made from composite polymer:nanoparticle thin films have been shown to be an economically viable option. Through thermal vapor deposition, we fabricated dielectric thin films composed of the polymer polyvinylidine fluoride (PVDF) and the ceramic nanoparticle titanium dioxide (TiO2). Fully understanding the deposition process required an investigation of electrode and dielectric film deposition. Film composition can be controlled by the mass ratio of PVDF:TiO2 prior to deposition. An analysis of the relationship between the ratio of PVDF:TiO2 before and after deposition will improve our understanding of this novel deposition method. X-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy were used to analyze film atomic concentrations. The results indicate a broad distribution of deposited TiO2 concentrations with the highest deposited amount at an initial mass concentration of 17% TiO2. The nanoparticle dispersion throughout the film is analyzed through atomic force microscopy and energy dispersive x-ray spectroscopy. Images from these two techniques confirm uniform TiO2 dispersion with cluster size less than 300 nm. These results, combined with spectroscopic analysis, verify control over the deposition process. Capacitors were fabricated using gold parallel plates with PVDF:TiO 2 dielectrics. These capacitors were analyzed using the atomic force microscope and a capacohmeter. Atomic force microscope images confirm that our gold films are acceptably smooth. Preliminary capacohmeter measurements indicate capacitance values of 6 nF and break down voltages of 2.4 V

  9. Synthesis and characterization of titanium dioxide thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps C, E.; Falcon B, T.; Carapia M, L.; Haro P, E.; Camacho L, M.A.

    2000-01-01

    In this work are presented the results obtained when TiO 2 thin films were deposited using the laser ablation technique. Thin films were deposited at different substrate temperatures, and different oxygen pressures, with the purpose of studying the influence of this deposit parameters in the structural characteristics of the films obtained. The structural characterization was realized through Raman Spectroscopy and X-ray Diffraction (XRD), the surface morphology of the layers deposited was verified by Scanning Electron Microscopy (Sem). The results show that the films obtained are of TiO 2 in rutile phase, getting this at low substrate temperatures, its morphology shows a soft surface with some spattered particles and good adherence. (Author)

  10. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  11. NbN thin films for superconducting radio frequency cavities

    Science.gov (United States)

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  12. NbN thin films for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  13. Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2018-03-18

    Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

  14. Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

    Science.gov (United States)

    Wei, Binbin; Mei, Gui; Liang, Hanfeng; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng

    2018-05-01

    Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm-2 at 1.0 mA cm-2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm-3 and a maximum power density of 6.6 W cm-3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

  15. Nanocrystalline SnO2-TiO2 thin film deposited on base of equilateral prism as an opto-electronic humidity sensor

    Science.gov (United States)

    Yadav, B. C.; Verma, Nidhi; Singh, Satyendra

    2012-09-01

    Present paper reports the synthesis of SnO2-TiO2 nanocomposite, its characterization and performance as opto-electronic humidity sensor. Nanocrystalline SnO2-TiO2 film was deposited on the base of an equilateral prism using a photo resist spinner and the as prepared film was annealed at 200 °C for 2 h. The crystal structure of the prepared film was investigated using X-ray diffraction (XRD). Minimum crystallite size of the material was found 7 nm. Surface morphology of the film was investigated by Scanning electron microscope (SEM LEO-0430, Cambridge). SEM image shows that the film is porous. Differential scanning calorimetry (DSC) of as synthesized material shows two exothermic peaks at about 40 and 110 °C, respectively which are due to the evaporation of chemical impurities and water. Further the prepared film was investigated through the exposure of humidity and relative humidity (%RH) was measured directly in terms of modulation in the intensity of light recorded on a digital power meter. The maximum sensitivity of sensor was found 4.14 μW/%RH, which is quite significant for sensor fabrication purposes.

  16. Direct current magnetron sputtering deposition of InN thin films

    International Nuclear Information System (INIS)

    Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

    2009-01-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  17. Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Bao Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

    2002-01-01

    Sandwich structured (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /(Bi, La) 4 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates, with the intention of simultaneously utilizing the advantages of both (Bi, La) 4 Ti 3 O 12 (BLT) and Pb(Zr, Ti)O 3 (PZT) thin films such as non-fatigue behaviours of BLT and good ferroelectric properties of PZT. Both BLT and PZT layers were prepared by a chemical solution deposition technique. The experiments demonstrated that the sandwich structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles under 8 V and excellent retention properties. The sandwich structured thin films also exhibited well-defined hysteresis loops with a remanent polarization (2P r ) of 8.8 μC cm -2 and a coercive field (E c ) of 47 kV cm -1 . The room-temperature dielectric constant and dissipation factor were 210 and 0.031, respectively, at a frequency of 100 kHz. These results suggest that this sandwich structure is a promising material combination for ferroelectric memory applications. (author)

  18. Synthesis of Ag-TiO2 composite nano thin film for antimicrobial application

    Science.gov (United States)

    Yu, Binyu; Leung, Kar Man; Guo, Qiuquan; Lau, Woon Ming; Yang, Jun

    2011-03-01

    TiO2 photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO2 nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO2 and Ag-TiO2 composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO2 and TiO2 films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO2 matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag0 state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm - 2 and in the dark respectively. The synthesized Ag-TiO2 thin films showed enhanced bactericidal activities compared to the neat TiO2 nanofilm both in the dark and under UV illumination.

  19. Synthesis of Ag-TiO2 composite nano thin film for antimicrobial application

    International Nuclear Information System (INIS)

    Yu Binyu; Guo Qiuquan; Yang Jun; Leung, Kar Man; Lau, Woon Ming

    2011-01-01

    TiO 2 photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO 2 nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO 2 and Ag-TiO 2 composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO 2 and TiO 2 films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO 2 matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag 0 state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm -2 and in the dark respectively. The synthesized Ag-TiO 2 thin films showed enhanced bactericidal activities compared to the neat TiO 2 nanofilm both in the dark and under UV illumination.

  20. Berkovich Nanoindentation on AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2010-01-01

    Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  1. Hybrid Solar Cell with TiO2 Film: BBOT Polymer and Copper Phthalocyanine as Sensitizer

    Directory of Open Access Journals (Sweden)

    Saptadip Saha

    2016-01-01

    Full Text Available An organic-inorganic hybrid solar cell was fabricated using Titanium dioxide (TiO2: 2,5-bis(5-tert-butyl-2-benzoxazolyl thiophene (BBOT film and Copper Phthalocyanine (CuPc as a sensitizer. BBOT was used in photodetector in other reported research works, but as per best of our knowledge, it was not implemented in solar cells till date. The blend of TiO2: BBOT blend was used to fabricate the film on ITO-coated glass and further a thin layer of CuPc was coated on the film. This was acted as photoanode and another ITO coated glass with a platinum coating was used as a counter electrode (cathode. An optimal blend of acetonitrile (solvent (50-100%, 1,3-dimethylimidazolium iodide (10-25%, iodine (2.5-10% and lithium iodide, pyridine derivative and thiocyanate was used as electrolytes in the hybrid solar cell. The different structural, optical and electrical characteristics were measured. The Hybrid solar cell showed a maximum conversion efficiency of 6.51%.

  2. Influence of thin film thickness of working electrodes on photovoltaic characteristics of dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Lai Yeong-Lin

    2017-01-01

    Full Text Available This paper presents the study of the influence of thin film thickness of working electrodes on the photovoltaic characteristics of dye-sensitized solar cells. Titanium dioxide (TiO2 thin films, with the thickness from 7.67 to 24.3 μm, were used to fabricate the working electrodes of dye-sensitized solar cells (DSSCs. A TiO2 film was coated on a fluorine-doped tin oxide (FTO conductive glass substrate and then sintered in a high-temperature furnace. On the other hand, platinum (Pt solution was coated onto an FTO substrate for the fabrication of the counter electrode of a DSSC. The working electrode immersed in a dye, the counter electrode, and the electrolyte were assembled to complete a sandwich-structure DSSC. The material analysis of the TiO2 films of DSSCs was carried out by scanning electron microscopy (SEM and ultraviolet-visible (UV-Vis spectroscopy, while the photovoltaic characteristics of DSSCs were measured by an AM-1.5 sunlight simulator. The light transmittance characteristics of the TiO2 working electrode depend on the TiO2 film thickness. The thin film thickness of the working electrode also affects the light absorption of a dye and results in the photovoltaic characteristics of the DSSC, including open-circuited voltage (VOC, short-circuited current density (JSC, fill factor, and photovoltaic conversion efficiency.

  3. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  4. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  5. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  6. Effect of TiCl4 treatment on the refractive index of nanoporous TiO2 films

    Science.gov (United States)

    Lee, Jeeyoung; Lee, Myeongkyu

    2015-12-01

    We investigate the effect of TiCl4 treatment on the refractive index of a nanoporous TiO2 film. A nanoparticulate TiO2 film prepared on a glass substrate was immersed in a TiCl4 aqueous solution. The subsequent reaction of TiCl4 with H2O produces TiO2 and thus modifies the density and the refractive index of the film. With increasing TiCl4 concentration, the refractive index initially increased and then declined after being maximized (n = 2.02 at 633 nm) at 0.08 M concentration. A refractive index change as large as 0.45 could be obtained with the TiCl4 treatment, making it possible to achieve diffraction efficiency exceeding 80% in a diffraction grating-embedded TiO2 film. For high TiCl4 concentrations of 0.32 M and 0.64 M, the refractive index remained nearly unchanged. This was attributed to the limited permeability of high-viscosity TiCl4 solutions into the nanoporous films. The measured pore size distributions were in good agreement with the results of a diffraction analysis and refractive index measurement.

  7. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  8. Sol-gel deposition and electrical properties of laser irradiated Cu doped TiO2 multilayer thin films

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available Multilayer thin films (3, 5 and 7 of 20% copper doped titanium dioxide (Cu:TiO2 have been deposited on glass substrates by sol-gel spin coating method. After deposition, films have been irradiated by a beam of continuous wave diode laser (532 nm for two minutes at the angle of 45°. Structural, surface morphology and electrical properties of films have been investigated by X-rays diffraction (XRD, scanning electron microscope (SEM and four point probe technique respectively. XRD shows the formation of titanium copper oxide. Surface morphology of thin films indicated that the average grain size is increased by increasing the number of layers. The average sheet resistivity of 3, 5 and 7 layers of thin films measured by four point probe technique is 2.2 × 104, 1.2 × 104 and 1.0 × 104 (Ohm-cm respectively. The present study will facilitate a cost effective and environmental friendly study for several properties of materials. Keywords: Cu:TiO2, Multilayer thin films, Diode laser

  9. Titanium dioxide thin films by atomic layer deposition: a review

    Science.gov (United States)

    Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

    2017-09-01

    Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

  10. Structural and electrical studies on sol-gel derived spun TiO2 thin films

    International Nuclear Information System (INIS)

    Hassan, A K; Chaure, N B; Ray, A K; Nabok, A V; Habesch, S

    2003-01-01

    Titanium dioxide thin films were prepared by spin coating of sol precursor onto microscopic glass slides, silicon and indium tin oxide (ITO) coated glass substrates. Spin speed was varied between 1000 and 6000 rpm. From the morphological analysis, it is found that thin films spun with speed ω≤4000 rpm assume higher ordered structure than those spun at a speed higher than 4000 rpm. Conduction at low voltages is believed to be variable range hopping at temperatures T a = 0.46 eV below the conduction band edge becomes dominant at temperatures higher than 220 K. At high field charge transport is due to trap-controlled space charge limited mechanism. Traps with a density N t ∼1x10 22 m -3 are thought to be situated at energy level E t 0.3 eV below the conduction band and are associated with film nonstoichiometry and interface states

  11. Antimicrobial Activity of TiO2 Nanoparticle-Coated Film for Potential Food Packaging Applications

    Directory of Open Access Journals (Sweden)

    Siti Hajar Othman

    2014-01-01

    Full Text Available Recent uses of titanium dioxide (TiO2 have involved various applications which include the food industry. This study aims to develop TiO2 nanoparticle-coated film for potential food packaging applications due to the photocatalytic antimicrobial property of TiO2. The TiO2 nanoparticles with varying concentrations (0–0.11 g/ 100 mL organic solvent were coated on food packaging film, particularly low density polyethylene (LDPE film. The antimicrobial activity of the films was investigated by their capability to inactivate Escherichia coli (E. coli in an actual food packaging application test under various conditions, including types of light (fluorescent and ultraviolet (UV and the length of time the film was exposed to light (one–three days. The antimicrobial activity of the TiO2 nanoparticle-coated films exposed under both types of lighting was found to increase with an increase in the TiO2 nanoparticle concentration and the light exposure time. It was also found that the antimicrobial activity of the films exposed under UV light was higher than that under fluorescent light. The developed film has the potential to be used as a food packaging film that can extend the shelf life, maintain the quality, and assure the safety of food.

  12. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    International Nuclear Information System (INIS)

    Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

    2010-01-01

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  13. Effect of solution concentration on MEH-PPV thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  14. Temperature field analysis of single layer TiO2 film components induced by long-pulse and short-pulse lasers.

    Science.gov (United States)

    Wang, Bin; Zhang, Hongchao; Qin, Yuan; Wang, Xi; Ni, Xiaowu; Shen, Zhonghua; Lu, Jian

    2011-07-10

    To study the differences between the damaging of thin film components induced by long-pulse and short-pulse lasers, a model of single layer TiO(2) film components with platinum high-absorptance inclusions was established. The temperature rises of TiO(2) films with inclusions of different sizes and different depths induced by a 1 ms long-pulse and a 10 ns short-pulse lasers were analyzed based on temperature field theory. The results show that there is a radius range of inclusions that corresponds to high temperature rises. Short-pulse lasers are more sensitive to high-absorptance inclusions and long-pulse lasers are more easily damage the substrate. The first-damage decision method is drawn from calculations. © 2011 Optical Society of America

  15. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  16. Films of brookite TiO2 nanorods/nanoparticles deposited by matrix-assisted pulsed laser evaporation as NO2 gas-sensing layers

    Science.gov (United States)

    Caricato, A. P.; Buonsanti, R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Taurino, A.; Rella, R.

    2011-09-01

    Titanium dioxide (TiO2) nanorods in the brookite phase, with average dimensions of 3-4 nm × 20-50 nm, were synthesized by a wet-chemical aminolysis route and used as precursors for thin films that were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. A nanorod solution in toluene (0.016 wt% TiO2) was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser at a fluence of 350 mJ/cm2 and repetition rate of 10 Hz. Single-crystal Si wafers, silica slides, carbon-coated Cu grids and alumina interdigitated slabs were used as substrates to allow performing different characterizations. Films fabricated with 6000 laser pulses had an average thickness of ˜150 nm, and a complete coverage of the selected substrate as achieved. High-resolution scanning and transmission electron microscopy investigations evidenced the formation of quite rough films incorporating individually distinguishable TiO2 nanorods and crystalline spherical nanoparticles with an average diameter of ˜13 nm. Spectrophotometric analysis showed high transparency through the UV-Vis spectral range. Promising resistive sensing responses to 1 ppm of NO2 mixed in dry air were obtained.

  17. Multi-Layered TiO2 Films towards Enhancement of Escherichia coli Inactivation

    Directory of Open Access Journals (Sweden)

    Sorachon Yoriya

    2016-09-01

    Full Text Available Crystalline TiO2 has shown its great photocatalytic properties in bacterial inactivation. This work presents a design fabrication of low-cost, layered TiO2 films assembled reactors and a study of their performance for a better understanding to elucidate the photocatalytic effect on inactivation of E. coli in water. The ability to reduce the number of bacteria in water samples for the layered TiO2 composing reactors has been investigated as a function of time, while varying the parameters of light sources, initial concentration of bacteria, and ratios of TiO2 film area and volume of water. Herein, the layered TiO2 films have been fabricated on the glass plates by thermal spray coating prior to screen printing, allowing a good adhesion of the films. Surface topology and crystallographic phase of TiO2 for the screen-printed active layer have been characterized, resulting in the ratio of anatase:rutile being 80:20. Under exposure to sunlight and a given condition employed in this study, the optimized film area:water volume of 1:2.62 has shown a significant ability to reduce the E. coli cells in water samples. The ratio of surface area of photocatalytic active base to volume of water medium is believed to play a predominant role facilitating the cells inactivation. The kinetic rate of inactivation and its behavior are also described in terms of adsorption of reaction species at different contact times.

  18. Application of complex geometrical optics to determination of thermal, transport, and optical parameters of thin films by the photothermal beam deflection technique.

    Science.gov (United States)

    Korte, Dorota; Franko, Mladen

    2015-01-01

    In this work, complex geometrical optics is, for what we believe is the first time, applied instead of geometrical or wave optics to describe the probe beam interaction with the field of the thermal wave in photothermal beam deflection (photothermal deflection spectroscopy) experiments on thin films. On the basis of this approach the thermal (thermal diffusivity and conductivity), optical (energy band gap), and transport (carrier lifetime) parameters of the semiconductor thin films (pure TiO2, N- and C-doped TiO2, or TiO2/SiO2 composites deposited on a glass or aluminum support) were determined with better accuracy and simultaneously during one measurement. The results are in good agreement with results obtained by the use of other methods and reported in the literature.

  19. Photocorrosion Mechanism of TiO2-Coated Photoanodes

    Directory of Open Access Journals (Sweden)

    Arjen Didden

    2015-01-01

    Full Text Available Atomic layer deposition was used to coat CdS photoanodes with 7 nm thick TiO2 films to protect them from photocorrosion during photoelectrochemical water splitting. Photoelectrochemical measurements indicate that the TiO2 coating does not provide full protection against photocorrosion. The degradation of the film initiates from small pinholes and shows oscillatory behavior that can be explained by an Avrami-type model for photocorrosion that is halfway between 2D and 3D etching. XPS analysis of corroded films indicates that a thin layer of CdS remains present on the surface of the corroded photoanode that is more resilient towards photocorrosion.

  20. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  1. Initial deposition and electron paramagnetic resonance defects characterization of TiO2 films prepared using successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Wu Yiyong; Shi Yaping; Xu Xianbin; Sun Chengyue

    2012-01-01

    Successive ionic layer adsorption and reaction (SILAR) technique was considered promisingly to deposit ultra thin titanium dioxide (TiO 2 ) films under ambient condition. In this paper, the growth process, structures and paramagnetic defects of the films were characterized by complementary techniques of atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and electron paramagnetic resonance spectroscopy. The results indicate that on glass substrate the SILAR TiO 2 film nucleates in an island mode within the initial five deposition cycles but grows in a layer-by-layer mode afterwards. The growth rate was measured as 4.6 Å/cycle. In the as-deposited films, a kind of paramagnetic defects is detected at g (2.0029) and it can be attributed to oxygen vacancies. These as-received oxygen vacancies could be annealed out at 473 K. Ultraviolet irradiation on the as-deposited films can also decrease the density of the defects. The relative mechanisms on the phenomenon were discussed in this paper. - Highlights: ► TiO 2 films are deposited on glass at 25 °C by successive ionic layer adsorption and reaction method with a rate of 4.6 Å/cycle. ► The films nucleate in an island mode initially but grow in a layer mode afterwards. ► The SILAR TiO 2 films nucleation period is five cycles. ► Electron paramagnetic resonance spectroscopy shows that TiO 2 films paramagnetic defects are attributed to oxygen vacancies. ► They will decrease by anneal or ultraviolet radiation and form hydroxyl or superoxide radicals.

  2. In-situ co-doping of sputter-deposited TiO2:WN films for the development of photoanodes intended for visible-light electro-photocatalytic degradation of emerging pollutants

    Science.gov (United States)

    Delegan, N.; Pandiyan, R.; Komtchou, S.; Dirany, A.; Drogui, P.; El Khakani, M. A.

    2018-05-01

    We report on the magnetron sputtering deposition of in-situ codoped TiO2:WN films intended for electro-photocatalytic (EPC) applications under solar irradiation. By varying the RF-magnetron sputtering deposition parameters, we were able to tune the in-situ incorporation of both N and W dopants in the TiO2 films over a wide concentration range (i.e., 0-9 at. % for N and 0-3 at. % for W). X-ray photoelectron spectroscopy analysis revealed that both dopants are mostly of a substitutional nature. The analysis of the UV-Vis transmission spectra of the films confirmed that the optical bandgap of both TiO2:N and TiO2:WN films can be significantly narrowed (from 3.2 eV for undoped-TiO2 down to ˜2.3 eV for the doped ones) by tuning their dopant concentrations. We were thus able to pinpoint an optimal window for both dopants (N and W) where the TiO2:WN films exhibit the narrowest bandgap. Moreover, the optimal codoping conditions greatly reduce the recombination defect state density compared to the monodoped TiO2:N films. These electronically passivated TiO2:WN films are shown to be highly effective for the EPC degradation of atrazine (pesticide pollutant) under sunlight irradiation (93% atrazine degraded after only 30 min of EPC treatment). Indeed, the optimally codoped TiO2:WN photoanodes were found to be more efficient than both the undoped-TiO2 and equally photosensitized TiO2:N photoanodes (by ˜70% and ˜25%, respectively) under AM1.5 irradiation.

  3. Antibacterial property of Ag nanoparticle-impregnated N-doped titania films under visible light

    Science.gov (United States)

    Wong, Ming-Show; Chen, Chun-Wei; Hsieh, Chia-Chun; Hung, Shih-Che; Sun, Der-Shan; Chang, Hsin-Hou

    2015-07-01

    Photocatalysts produce free radicals upon receiving light energy; thus, they possess antibacterial properties. Silver (Ag) is an antibacterial material that disrupts bacterial physiology. Our previous study reported that the high antibacterial property of silver nanoparticles on the surfaces of visible light-responsive nitrogen-doped TiO2 photocatalysts [TiO2(N)] could be further enhanced by visible light illumination. However, the major limitation of this Ag-TiO2 composite material is its durability; the antibacterial property decreased markedly after repeated use. To overcome this limitation, we developed TiO2(N)/Ag/TiO2(N) sandwich films in which the silver is embedded between two TiO2(N) layers. Various characteristics, including silver and nitrogen amounts, were examined in the composite materials. Various analyses, including electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and ultraviolet-visible absorption spectrum and methylene blue degradation rate analyses, were performed. The antibacterial properties of the composite materials were investigated. Here we revealed that the antibacterial durability of these thin films is substantially improved in both the dark and visible light, by which bacteria, such as Escherichia coli, Streptococcus pyogenes, Staphylococcus aureus, and Acinetobacter baumannii, could be efficiently eliminated. This study demonstrated a feasible approach to improve the visible-light responsiveness and durability of antibacterial materials that contain silver nanoparticles impregnated in TiO2(N) films.

  4. Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)

    2012-07-01

    Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.

  5. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

    International Nuclear Information System (INIS)

    Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

    2005-01-01

    The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

  6. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  7. Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

    Science.gov (United States)

    Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

    2018-04-01

    In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

  8. The TiO2 Refraction Film for CsI Scintillator

    OpenAIRE

    C. C. Chen; C. W. Hun; C. J. Wang; C. Y. Chen; J. S. Lin; K. J. Huang

    2015-01-01

    Cesium iodide (CsI) melt was injected into anodic aluminum oxide (AAO) template and was solidified to CsI column. The controllable AAO channel size (10~500 nm) can makes CsI column size from 10 to 500 nm in diameter. In order to have a shorter light irradiate from each singe CsI column top to bottom the AAO template was coated a TiO2 nano-film. The TiO2 film acts a refraction film and makes X-ray has a shorter irradiation path in the CsI crystal making a stronger the photo-electron signal. Wh...

  9. THz spectroscopy on superconducting NbN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Daschke, Lena; Pracht, Uwe S.; Dressel, Martin; Scheffler, Marc [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Ilin, Konstantin S.; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, Karlsruher Institut fuer Technologie (Germany)

    2015-07-01

    Epitaxial thin-film niobium nitride (NbN) is a conventional BCS superconductor. In presence of strong disorder, however, electronic inhomogeneities appear, which is not fully understood yet. To obtain a better insight into the physics of such disordered materials, studies on model systems such as structurally tailored films might be useful. Furthermore, disordered NbN films are used for single-photon detection devices, whose proper performance depends on a profound understanding of the superconducting properties. The studied NbN films have a T{sub c} ranging from 10 to 15 K and the superconducting energy gap is easily accessible with THz spectroscopy (0.4 - 5.6 meV). We investigate thin films of NbN sputtered on a sapphire substrate. With a Mach-Zehnder interferometer we measure the amplitude and phase shift of radiation transmitted through the thin-film sample. From there we can determine the real and imaginary parts of the optical conductivity. These results give information about the energy gap, Cooper pair density, and quasiparticle dynamics, including the temperature evolution of these quantities. We found that a film with 10 nm thickness roughly follows the BCS behavior, as expected. We will present results of our measurements on several different NbN samples.

  10. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  11. Lipon thin films grown by plasma-enhanced metalorganic chemical vapor deposition in a N{sub 2}-H{sub 2}-Ar gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Meda, Lamartine, E-mail: LMeda@xula.edu [Department of Chemistry, Xavier University of Louisiana, 1 Drexel Drive, New Orleans, LA, 70125 (United States); Maxie, Eleston E. [Excellatron Solid State LLC, 263 Decatur Street, Atlanta, GA 30312 (United States)

    2012-01-01

    Lithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasma-enhanced metalorganic chemical vapor deposition method. Lipon thin films were deposited on approximately 0.2 {mu}m thick Au-coated alumina substrates in a N{sub 2}-H{sub 2}-Ar plasma at 13.56 MHz, a power of 150 W, and at 180 Degree-Sign C using triethyl phosphate [(CH{sub 2}CH{sub 3}){sub 3}PO{sub 4}] and lithium tert-butoxide [(LiOC(CH{sub 3}){sub 3}] precursors. Lipon growth rates ranged from 10 to 42 nm/min and thicknesses varied from 1 to 2.5 {mu}m. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy (XPS) revealed approximately 4 at.% N in the films. The ionic conductivity of Lipon was measured by electrochemical impedance spectroscopy to be approximately 1.02 {mu}S/cm, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li{sub 3}PO{sub 4} targets in either mixed Ar-N{sub 2} or pure N{sub 2} atmosphere. Attempts to deposit Lipon in a N{sub 2}-O{sub 2}-Ar plasma resulted in the growth of Li{sub 3}PO{sub 4} thin films. The XPS analysis shows no C and N atom peaks. Due to the high impedance of these films, reliable conductivity measurements could not be obtained for films grown in N{sub 2}-O{sub 2}-Ar plasma.

  12. Liquid phase deposition of WO3/TiO2 heterojunction films with high photoelectrocatalytic activity under visible light irradiation

    International Nuclear Information System (INIS)

    Zhang, Man; Yang, Changzhu; Pu, Wenhong; Tan, Yuanbin; Yang, Kun; Zhang, Jingdong

    2014-01-01

    Highlights: • Liquid phase deposition is developed for preparing WO 3 /TiO 2 heterojunction films. • TiO 2 film provides an excellent platform for WO 3 deposition. • WO 3 expands the absorption band edge of TiO 2 film to visible light region. • WO 3 /TiO 2 heterojunction film shows high photoelectrocatalytic activity. - ABSTRACT: The heterojunction films of WO 3 /TiO 2 were prepared by liquid phase deposition (LPD) method via two-step processes. The scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopic analysis indicated that flower-like WO 3 film was successfully deposited on TiO 2 film with the LPD processes. The TiO 2 film provided an excellent platform for WO 3 deposition while WO 3 obviously expanded the absorption of TiO 2 film to visible light. As the result, the heterojunction film of WO 3 /TiO 2 exhibited higher photocurrent response to visible light illumination than pure TiO 2 or WO 3 film. The photoelectrocatalytic (PEC) activity of WO 3 /TiO 2 film was evaluated by degrading Rhodamin B (RhB) and 4-chlorophenol (4-CP) under visible light irradiation. The results showed that the LPD WO 3 /TiO 2 film possessed high PEC activity for efficient removal of various refractory organic pollutants

  13. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

  14. Photocatalytic Graphene-TiO2 Thin Films Fabricated by Low-Temperature Ultrasonic Vibration-Assisted Spin and Spray Coating in a Sol-Gel Process

    Directory of Open Access Journals (Sweden)

    Fatemeh Zabihi

    2017-05-01

    Full Text Available In this work, we communicate a facile and low temperature synthesis process for the fabrication of graphene-TiO2 photocatalytic composite thin films. A sol-gel chemical route is used to synthesize TiO2 from the precursor solutions and spin and spray coating are used to deposit the films. Excitation of the wet films during the casting process by ultrasonic vibration favorably influences both the sol-gel route and the deposition process, through the following mechanisms. The ultrasound energy imparted to the wet film breaks down the physical bonds of the gel phase. As a result, only a low-temperature post annealing process is required to eliminate the residues to complete the conversion of precursors to TiO2. In addition, ultrasonic vibration creates a nanoscale agitating motion or microstreaming in the liquid film that facilitates mixing of TiO2 and graphene nanosheets. The films made based on the above-mentioned ultrasonic vibration-assisted method and annealed at 150 °C contain both rutile and anatase phases of TiO2, which is the most favorable configuration for photocatalytic applications. The photoinduced and photocatalytic experiments demonstrate effective photocurrent generation and elimination of pollutants by graphene-TiO2 composite thin films fabricated via scalable spray coating and mild temperature processing, the results of which are comparable with those made using lab-scale and energy-intensive processes.

  15. Optical properties of ZrO2, SiO2 and TiO2-SiO2 xerogels and coatings doped with Eu3+ and Eu2+

    Directory of Open Access Journals (Sweden)

    Gonçalves Rogéria R.

    1999-01-01

    Full Text Available Eu3+ doped bulk monoliths and thin films were obtained by sol-gel methods in the ZrO2, SiO2 and SiO2-TiO2 systems. Eu3+ 5D0 ® 7FJ emission and decay time characteristics were measured during the entire experimental preparation route from the initial sol to the final xerogels. The crystalline phases identified were tetragonal ZrO2 and mixtures of rutile and anatase TiO2 at high temperature treatments in bulk samples. Good quality thin films were obtained for all systems by dip-coating optical glasses (Schott BK270. The same spectroscopic features were observed either for the bulk monoliths or the films. By appropriate heat treatments under H2 atmosphere Eu2+ containing samples could be obtained in the SiO2-TiO2 system.

  16. Influence of substrate temperature and silver-doping on the structural and optical properties of TiO_2 films

    International Nuclear Information System (INIS)

    Fischer, Dieter

    2016-01-01

    Evaporation of titanium together with activated oxygen is used to grow TiO_2 films and simultaneously with silver to grow Ag–TiO_2 films (5 at.% Ag) onto sapphire substrates at three different substrate temperatures: − 190, 30, and 200 °C. The obtained films were characterized by X-ray powder diffraction, Raman, X-ray photoelectron, ultraviolet–visible spectroscopy, and transmission electron microscope investigations. The properties of TiO_2 films varied with the substrate temperature. Amorphous, transparent TiO_2 films were grown at − 190 °C and opaque, polycrystalline films at 200 °C, respectively. Surprisingly, at room temperature black, amorphous TiO_2 films are obtained which transform at 350 °C into a mixture of the anatase and brookite polymorph. In the amorphous state of the TiO_2 films a predefined rutile arrangement is suggested by Raman investigations, and the contraction of the lattice constant c of anatase phases (tetragonal, space group I 4_1/amd) depending on the substrate temperature is experimentally observed. The silver-doped TiO_2 films deposited at − 190 and 30 °C contain Ag-particles with 2 nm in size inside the TiO_2 matrix, which after annealing segregate under increasing particle sizes. The silver-doping stabilizes the anatase polymorph and yields to reduced titanium species in the films especially during deposition at 30 °C. The Ag–TiO_2 films deposited at − 190 °C are transparent up to 350 °C. In the undoped as well as silver-doped TiO_2 films the rutile polymorph is directly formed at 200 °C as main phase. - Highlights: • At room temperature black, amorphous TiO_2 films are obtained. • A predefined rutile arrangement is suggested in amorphous TiO_2 films. • Annealed TiO_2 films crystallize to a mixture of the anatase and brookite polymorph. • In TiO_2 and Ag-doped TiO_2 films the rutile polymorph is directly formed at 200 °C. • Ag-doped TiO_2 films stabilize the anatase polymorph and reduced titanium

  17. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

    Science.gov (United States)

    Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

    2018-06-01

    We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

  18. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

    International Nuclear Information System (INIS)

    Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T

    2007-01-01

    Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency

  19. Microstructural, photocatalysis and electrochemical investigations on CeTi2O6 thin films

    International Nuclear Information System (INIS)

    Verma, Amita; Goyal, Anshu; Sharma, R.K.

    2008-01-01

    The properties of sol-gel derived CeTi 2 O 6 thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol are discussed. The effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics has been examined. Lowest annealing temperature for the formation of crystalline CeTi 2 O 6 phase in these samples is identified as 580 deg. C. The optical transmittance of the films is observed to be independent of the annealing temperature. The optical energy bandgap of the 600 deg. C annealed film for indirect transition is influenced by the presence of anatase phase of TiO 2 in its structure. Fourier transform infrared spectroscopy investigations have evidenced increased bond strength of the Ti-O-Ti network in the films as a function of annealing temperature. The photoluminescence intensity of the films has shown dependence on the annealing temperature with the films fired at 450 deg. C exhibiting the maximum photoluminescence activity. The decomposition of methyl orange and eosin (yellow) under UV-visible light irradiation in the presence of crystalline CeTi 2 O 6 films shows the presence of photoactivity in these films. The photocatalytic response of CeTi 2 O 6 films is found to be superior to the TiO 2 films. In comparison to crystalline films, the amorphous films have shown superior electrochemical characteristics. The 500 deg. C annealed amorphous films have exhibited the most appropriate properties for incorporation in electrochromic devices comprising tungsten oxide as the primary electrochromic electrode

  20. Modification of physicochemical and thermal properties of starch films by incorporation of TiO2 nanoparticles.

    Science.gov (United States)

    Oleyaei, Seyed Amir; Zahedi, Younes; Ghanbarzadeh, Babak; Moayedi, Ali Akbar

    2016-08-01

    In this research, potato starch and TiO2 nanoparticles (0.5, 1 and 2wt%) films were developed. Influences of different concentrations of TiO2 on the functional properties of nanocomposite films (water-related properties, mechanical characteristics, and UV transmittance) were investigated. XRD, FTIR, and DSC analyses were used to characterize the morphology and thermal properties of the films. The results revealed that TiO2 nanoparticles dramatically decreased the values of water-related properties (water vapor permeability: 11-34%; water solubility: 1.88-9.26%; moisture uptake: 2.15-11.18%). Incorporation of TiO2 led to a slight increment of contact angle and tensile strength, and a decrease in elongation at break of the films. TiO2 successfully blocked more than 90% of UV light, while opacity and white index of the films were enhanced. Glass transition temperature and melting point of the films were positively affected by the addition of TiO2 nanoparticles. The result of XRD study exhibited that due to a limited agglomeration of TiO2 nanoparticles, the mean crystal size of TiO2 increased. Formation of new hydrogen bonds between the hydroxyl groups of starch and nanoparticles was confirmed by FTIR spectroscopy. In conclusion, TiO2 nanoparticles improved the functional properties of potato starch film and extended the potential for food packaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Optical and electrical properties of Ti(Cr)O{sub 2}:N thin films deposited by magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kollbek, K., E-mail: kamila.kollbek@agh.edu.pl [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Szkudlarek, A.; Marzec, M.M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Lyson-Sypien, B.; Cecot, M. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Bernasik, A. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Radecka, M. [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Zakrzewska, K. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland)

    2016-09-01

    Graphical abstract: - Highlights: • Co-doped well-crystallized stoichiometric Ti(Cr)O{sub 2}:N thin films are deposited. • Magnetron sputtering of ceramic TiO{sub 2} target is a new strategy for co-doping. • Bigger contribution from substitutionally incorporated nitrogen is seen in XPS. • Significant red shift of the fundamental absorption edge is obtained. - Abstract: The paper deals with TiO{sub 2}-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N{sub 2} atmosphere. Co-doped samples of Ti(Cr)O{sub 2}:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO{sub 2} and TiO{sub 2}:N thin films are well crystallized as opposed to those of TiO{sub 2}:Cr and Ti(Cr)O{sub 2}:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O{sub 2−x}:N to 2.78 eV in the case of stoichiometric Ti(Cr)O{sub 2}:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO{sub 2} lattice. Electrical conductivity of stoichiometric Ti(Cr)O{sub 2}:N increases in comparison to co-doped nonstoichiometric TiO{sub 2−x} thin film and reaches almost the same value as that of TiO{sub 2} stoichiometric film.

  2. Polymer Photovoltaic Cell Using TiO2/G-PEDOT Nanocomplex Film as Electrode

    Directory of Open Access Journals (Sweden)

    F. X. Xie

    2008-01-01

    Full Text Available Using TiO2/G-PEDOT (PEDOT/PSS doped with glycerol nanocomplex film as a substitute for metal electrode in organic photovoltaic cell is described. Indium tin oxide (ITO worked as cathode and TiO2/G-PEDOT nanocomplex works as anode. The thickness of TiO2 layer in nanocomplex greatly affects the act of this nonmetallic electrode of the device. To enhance its performance, this inverted organic photovoltaic cell uses another TiO2 layer as electron selective layer contacted to ITO coated glass substrates. All films made by solution processing techniques are coated on the transparent substrate (glass with a conducting film ITO. The efficiency of this solar cell is compared with the conventional device using Al as electrode.

  3. Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

    Science.gov (United States)

    Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

    1994-09-01

    The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

  4. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  5. Lithium ion intercalation into thin film anatase

    International Nuclear Information System (INIS)

    Kundrata, I.; Froehlich, K.; Ballo, P.

    2015-01-01

    The aim of this work is to find the optimal parameters for thin film TiO 2 anatase grown by Atomic layer deposition (ALD) for use as electrode in lithium ion batteries. Two parameters, the optimal film thickness and growth conditions are aimed for. Optimal film thickness for achieving optimum between capacity gained from volume and capacity gained by changing of the intercalation constant and optimal growth conditions for film conformity on structured substrates with high aspect ratio. Here we presents first results from this ongoing research and discuss future outlooks. (authors)

  6. Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

    Science.gov (United States)

    Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

    2018-05-01

    Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

  7. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  8. Morphological study of electrophoretically deposited TiO2 film for DSSC application

    Science.gov (United States)

    Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

    2018-05-01

    In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

  9. Electrophoretic deposition of nanocrystalline TiO2 films on Ti substrates for use in flexible dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Tan Weiwei; Yin Xiong; Zhou Xiaowen; Zhang Jingbo; Xiao Xurui; Lin Yuan

    2009-01-01

    Nanocrystalline TiO 2 films were prepared on flexible Ti-metal sheets by electrophoretic deposition followed by chemical treatment with tetra-n-butyl titanate (TBT) and sintering at 450 deg. C. X-ray diffraction (XRD) analysis indicates that TBT treatment led to the formation of additional anatase TiO 2 , which plays an important role in improving the interconnection between TiO 2 particles, as well as the adherence of the film to the substrate, and in modifying the surface properties of the nanocrystalline particles. The effect of TBT treatment on the electron transport in the nanocrystalline films was studied by intensity-modulated photocurrent spectroscopy (IMPS). An increase in the conversion efficiency was obtained for the dye-sensitized solar cells with TBT-treated nanocrystalline TiO 2 films. The cell performance was further optimized by designing nanocrystalline TiO 2 films with a double-layer structure composed of a light-scattering layer and a transparent layer. The light-scattering effect of the double-layer nanocrystalline films was evaluated by diffuse reflectance spectra. Employing the double-layer nanocrystalline films as the photoelectrodes resulted in a significant improvement in the incident photo-to-current conversion efficiency of the corresponding cells due to enhanced solar absorption by light scattering. A high conversion efficiency of 6.33% was measured under illumination with 100 mW cm -2 (AM 1.5) simulated sunlight.

  10. Effect of chemisorbed surface species on the photocatalytic activity of TiO2 nanoparticulate films

    International Nuclear Information System (INIS)

    Cao Yaan; Yang Wensheng; Chen Yongmei; Du Hui; Yue, Polock

    2004-01-01

    TiO 2 sols prepared in acidic and basic medium were deposited into films by a spin coating method. Photodegradation experiments showed that photocatalytic activity of the films prepared from acidic sol was much higher than that from basic sol. It is identified that there are more chemisorbed species of CO 2 on the surface of the TiO 2 films from the basic sol than on the surface of the TiO 2 films from the acidic sol. The chemisorbed species of CO 2 reduce the concentration of active species such as hydroxyl group and bridging oxygen on surface of the TiO 2 film and contribute to the formation of surface electron traps in the band gap which are detrimental to charge separation, thus lowering the photocatalytic activity

  11. The influence of metal interlayers on the structural and optical properties of nano-crystalline TiO 2 films

    KAUST Repository

    Yang, Yong

    2012-03-01

    TiO 2-M-TiO 2 (M = W, Co and Ag) multilayer films have been deposited on glass substrates using reactive magnetron sputtering, then annealed in air for 2 h at 500°C. The structure, surface morphology and optical properties of the films have been studied using X-ray diffraction, Raman spectroscopy, atomic force microscopy and UV-vis spectroscopy. The TiO 2-W-TiO 2 and TiO 2-Co-TiO 2 films showed crystalline phases, whereas the TiO 2-Ag-TiO 2 films remained in the amorphous state. The crystallization temperature for the TiO 2-M-TiO 2 films decreased significantly compared with pure TiO 2 film deposited on quartz. Detailed analysis of the Raman spectra suggested that the crystallization of TiO 2-M-TiO 2 films was associated with the large structural deformation imposed by the oxidation of intermediate metal layers. Moreover, the optical band gap of the films narrowed due to the appearance of impurity levels as the metal ions migrated into the TiO 2 matrix. These results indicate that the insertion of intermediate metal layers provides a feasible access to improve the structural and optical properties of anatase TiO 2 films, leading to promising applications in the field of photocatalysis. © 2011 Elsevier B.V. All rights reserved.

  12. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    International Nuclear Information System (INIS)

    Zhu Xiaohong; Ren Yinjuan; Zhang Caiyun; Zhu Jiliang; Zhu Jianguo; Xiao Dingquan; Defaÿ, Emmanuel; Aïd, Marc

    2013-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm −1 ) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes. (paper)

  13. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    Science.gov (United States)

    Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

    2013-03-01

    Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.

  14. The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

    Directory of Open Access Journals (Sweden)

    Kristina BOČKUTĖ

    2013-09-01

    Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

  15. Preparation of Nanoporous TiO2 Electrodes for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Hsiue-Hsyan Wang

    2011-01-01

    Full Text Available Nano-porous TiO2 thin films have been widely used as the working electrodes in dye-sensitized solar cells (DSSCs. In this work, the phase-pure anatase TiO2 (a-TiO2 and rutile TiO2 (r-TiO2 have been prepared using hydrothermal processes. The investigation of photo-to-electron conversion efficiency of DSSCs fabricated from mixed-TiO2 with a-TiO2 and r-TiO2 ratio of 80 : 20 (A8R2 was performed and compared to that from commercial TiO2 (DP-25. The results showed higher efficiency of DSSC for A8R2 cells with same dependence of cell efficiency on the film thickness for both A8R2 and DP-25 cells. The best efficiency obtained in this work is 5.2% from A8R2 cell with TiO2 film thickness of 12.0 μm. The correlation between the TiO2 films thickness and photoelectron chemical properties of DSSCs fabricated from A8R2 and DP-25 was compared and discussed.

  16. Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

    KAUST Repository

    Wei, Binbin

    2018-04-09

    Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

  17. Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

    KAUST Repository

    Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Qi, Zhengbing; Shen, Hao; Wang, Zhoucheng

    2018-01-01

    Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

  18. Synthesis and characterization of thin films of Pd/TiO2 with possible applications in photo catalysis

    International Nuclear Information System (INIS)

    Tirado G, S.; Valenzuela Z, M. A.

    2015-10-01

    In this paper the synthesis and study of thin films of titanium oxide is reported, as well as those that were surface modified with palladium nanoparticles Pd/TiO 2 . First, the TiO 2 films are grown on substrates of soda-lime glass using chemical sol-gel route and the repeated immersion procedure. The salt precursor titanium oxy-acetylacetonate to 0.2 M, in the solvent 2-methoxyethanol and monoethanolamine was used as stabilizer. The number of used immersions gave an average thickness estimate for these films of 172.8 nm. Second, the series of Pd/TiO 2 films surface modified were obtained from a solution of palladium nitrate dehydrate at low concentration, with the same procedure. The films grown TiO 2 and those surface-modified films were characterized in its structure by X-ray diffraction, morphology by scanning electron microscopy, the topography with atomic force microscopy, optical properties by UV-Vis, among others. Photoluminescence properties and/or possible applications in photo catalysis are reported in this paper. (Author)

  19. Deposition and characterization of ZrMoN thin films by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Fontes Junir, A.S.; Felix, L.C.; Oliveira, G.B. de; Fernandez, D.R.; Carvalho, R.G.; Tentardini, E.K.; Silva Junior, A.H. da

    2016-01-01

    Thin films of ZrMoN were deposited by magnetron reactive sputtering technique in order to study the molybdenum influence on the mechanical properties and oxidation resistance of these coatings. Three thin films with molybdenum concentrations from 25 to 40 at.% were selected. The displacement of characteristic peaks of ZrN where identified by GIXRD results of films with larger Mo content. This result is indicative of the Mo accommodation in the lattice structure. Hardness tests revealed favorable results with values up to 33 GPa. Oxidation tests showed that ZrN oxidized at 500 °C with a monoclinic ZrO 2 and tetragonal formation; whereas the thin films with Mo addition impeded the formation of the monoclinic ZrO 2 phase at partial oxidation. (author)

  20. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  1. Formation of hydroxyl radicals and kinetic study of 2-chlorophenol photocatalytic oxidation using C-doped TiO2, N-doped TiO2, and C,N Co-doped TiO2 under visible light.

    Science.gov (United States)

    Ananpattarachai, Jirapat; Seraphin, Supapan; Kajitvichyanukul, Puangrat

    2016-02-01

    This work reports on synthesis, characterization, adsorption ability, formation rate of hydroxyl radicals (OH(•)), photocatalytic oxidation kinetics, and mineralization ability of C-doped titanium dioxide (TiO2), N-doped TiO2, and C,N co-doped TiO2 prepared by the sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy were used to analyze the titania. The rate of formation of OH(•) for each type of titania was determined, and the OH-index was calculated. The kinetics of as-synthesized TiO2 catalysts in photocatalytic oxidation of 2-chlorophenol (2-CP) under visible light irradiation were evaluated. Results revealed that nitrogen was incorporated into the lattice of titania with the structure of O-Ti-N linkages in N-doped TiO2 and C,N co-doped TiO2. Carbon was joined to the Ti-O-C bond in the C-doped TiO2 and C,N co-doped TiO2. The 2-CP adsorption ability of C,N co-doped TiO2 and C-doped TiO2 originated from a layer composed of a complex carbonaceous mixture at the surface of TiO2. C,N co-doped TiO2 had highest formation rate of OH(•) and photocatalytic activity due to a synergistic effect of carbon and nitrogen co-doping. The order of photocatalytic activity per unit surface area was the same as that of the formation rate of OH(•) unit surface area in the following order: C,N co-doped TiO2 > C-doped TiO2 > N-doped TiO2 > undoped TiO2.

  2. Enhancement of solar hydrogen evolution from water by surface modification with CdS and TiO2 on porous CuInS2 photocathodes prepared by an electrodeposition-sulfurization method.

    Science.gov (United States)

    Zhao, Jiao; Minegishi, Tsutomu; Zhang, Li; Zhong, Miao; Gunawan; Nakabayashi, Mamiko; Ma, Guijun; Hisatomi, Takashi; Katayama, Masao; Ikeda, Shigeru; Shibata, Naoya; Yamada, Taro; Domen, Kazunari

    2014-10-27

    Porous films of p-type CuInS2, prepared by sulfurization of electrodeposited metals, are surface-modified with thin layers of CdS and TiO2. This specific porous electrode evolved H2 from photoelectrochemical water reduction under simulated sunlight. Modification with thin n-type CdS and TiO2 layers significantly increased the cathodic photocurrent and onset potential through the formation of a p-n junction on the surface. The modified photocathodes showed a relatively high efficiency and stable H2 production under the present reaction conditions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. SAXS Studies of TiO2 Nanoparticles in Polymer Electrolytes and in Nanostructured Films

    Directory of Open Access Journals (Sweden)

    Sigrid Bernstorff

    2010-11-01

    Full Text Available Polymer electrolytes as nanostructured materials are very attractive components for batteries and opto-electronic devices. (PEO8ZnCl2 polymer electrolytes were prepared from PEO and ZnCl2. The nanocomposites (PEO8ZnCl2/TiO2 themselves contained TiO2 nanograins. In this work, the influence of the TiO2 nanograins on the morphology and ionic conductivity of the nanocomposite was systematically studied by transmission small-angle X-ray scattering (SAXS simultaneously recorded with wide-angle X-ray diffraction (WAXD and differential scanning calorimetry (DSC at the synchrotron ELETTRA. Films containing nanosized grains of titanium dioxide (TiO2 are widely used in the research of optical and photovoltaic devices. The TiO2 films, prepared by chemical vapor deposition and e-beam epitaxy, were annealed in hydrogen atmospheres in the temperature range between 20 °C and 900 °C in order to study anatase-rutile phase transition at 740 °C. Also, grazing-incidence small angle X-ray scattering (GISAXS spectra for each TiO2 film were measured in reflection geometry at different grazing incident angles. Environmentally friendly galvanic cells, as well as solar cells of the second generation, are to be constructed with TiO2 film as working electrode, and nanocomposite polymer as electrolyte.

  4. Depth profile analysis of thin TiOxNy films using standard ion beam analysis techniques and HERDA

    International Nuclear Information System (INIS)

    Markwitz, A.; Dytlewski, N.; Cohen, D.

    1999-01-01

    Ion beam assisted deposition is used to fabricate thin titanium oxynitride films (TiO x N y ) at Industrial Research (typical film thickness 100nm). At the Institute of Geological and Nuclear Sciences, the thin films are analysed using non-destructive standard ion beam analysis (IBA) techniques. High-resolution titanium depth profiles are measured with RBS using 1.5MeV 4 He + ions. Non-resonant nuclear reaction analysis (NRA) is performed for investigating the amounts of O and N in the deposited films using the reactions 16 O(d,p) 17 O at 920 keV and 14 N(d,α) 12 C at 1.4 MeV. Using a combination of these nuclear techniques, the stoichiometry as well as the thickness of the layers is revealed. However, when oxygen and nitrogen depth profiles are required for investigating stoichiometric changes in the films, additional nuclear analysis techniques such as heavy ion elastic recoil detection (HERDA) have to be applied. With HERDA, depth profiles of N, O, and Ti are measured simultaneously. In this paper comparative IBA measurement s of TiO x N y films with different compositions are presented and discussed

  5. Co3O4/TiO2 films obtained by laser ablation and sol-gel for the reaction of oxygen liberation in alkaline medium

    International Nuclear Information System (INIS)

    Perez A, J.; Fernandez V, S. M.; Escobar A, L.; Jimenez B, J.

    2008-01-01

    The laser ablation technique known as Pulsed Laser Deposition (PLD) is used for obtaining thin films of TiO 2 /SnO 2 , which was later modified with Co 3 O 4 by PLD or by sol-gel technique. The films were characterized by X-ray diffraction, ultraviolet Vis and Raman spectroscopies, scanning electron microscopy and energy analysis of the dispersed X-rays produced by Auger decay. The anatase phase with particles of nano metric size was obtained by depositing the titanium dioxide in argon atmosphere. The Co 3 O 4 films obtained by PLD on the TiO 2 showed the same morphology. The electrocatalytic activity of the films that were used as photo anodes for the reaction of oxygen liberation was carried out in the darkness, with environment light and the light emitted by a xenon lamp. The current density was higher for films of Co 3 O 4 /TiO 2 /SnO 2 obtained by PLD that for cobalt dioxide of mixed valence obtained by sol-gel. (Author)

  6. New Cu-based catalysts supported on TiO2 films for Ullmann SnAr-type C-O coupling reactions

    NARCIS (Netherlands)

    Benaskar, F.; Engels, V.; Rebrov, E.; Patil, N.G.; Meuldijk, J.; Thuene, P.C.; Magusin, P.C.M.M.; Mezari, B.; Hessel, V.; Hulshof, L.A.; Hensen, E.J.M.; Wheatley, A.E.H.; Schouten, J.C.

    2012-01-01

    New routes for the preparation of highly active TiO2-supported Cu and CuZn catalysts have been developed for CO coupling reactions. Slurries of a titania precursor were dip-coated onto glass beads to obtain either structured mesoporous or non-porous titania thin films. The Cu and CuZn nanoparticles,

  7. Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

    International Nuclear Information System (INIS)

    King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

    2008-01-01

    Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

  8. Photocatalytic Activity of Nanostructured Titanium Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Zdenek Michalcik

    2012-01-01

    Full Text Available The aim of this paper is to investigate the properties and photocatalytic activity of nanostructured TiO2 layers. The glancing angle deposition method with DC sputtering at low temperature was applied for deposition of the layers with various columnar structures. The thin-film structure and surface morphology were analyzed by XRD, SEM, and AFM analyses. The photocatalytic activity of the films was determined by the rate constant of the decomposition of the Acid Orange 7. In dependence on the glancing angle deposition parameters, three types of columnar structures were obtained. The films feature anatase/rutile and/or amorphous structures depending on the film architecture and deposition method. All the films give the evidence of the photocatalytic activity, even those without proved anatase or rutile structure presence. The impact of columnar boundary in perspective of the photocatalytic activity of nanostructured TiO2 layers was discussed as the possible factor supporting the photocatalytic activity.

  9. Surface modification of porous nanocrystalline TiO2 films for dye-sensitized solar cell application by various gas plasmas

    International Nuclear Information System (INIS)

    Kim, Youngsoo; Yoon, Chang-Ho; Kim, Kang-Jin; Lee, Yeonhee

    2007-01-01

    Titanium dioxide (TiO 2 ) film for dye-sensitized solar cells (DSSCs) has surface defects such as oxygen vacancies created during the annealing process. The authors used a plasma treatment technique to reduce defects on TiO 2 surfaces. They investigated the influence of different gas plasma treatments of TiO 2 film on the photoelectric performance of DSSC. Short-circuit photocurrent density (J sc ), open-circuit photovoltage (V oc ), and the amount of adsorbed dye for DSSCs were measured. As a result, the solar-to-electricity conversion efficiencies of the O 2 - and N 2 -treated cells increased by 15%-20% compared to untreated cells. On the other hand, solar energy conversion efficiency of CF 4 -plasma treated cells decreased drastically. The increased amount of adsorbed dye on the TiO 2 film was measured by time-of-flight secondary ion mass spectrometry. TiO 2 surfaces modified by plasma treatment were characterized using analytical instruments such as x-ray photoelectron spectroscopy and near-edge x-ray absorption fine structure

  10. Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

    International Nuclear Information System (INIS)

    Lee, Hee-Chul; Lee, Won-Jong

    2002-01-01

    Structural and electrical characteristics of Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO 2 , and Pt/IrO 2 ) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO 2 electrode contain a large amount of PbO x phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO 2 , and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO 2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics

  11. Highly-ordered mesoporous titania thin films prepared via surfactant assembly on conductive indium-tin-oxide/glass substrate and its optical properties

    International Nuclear Information System (INIS)

    Uchida, Hiroshi; Patel, Mehul N.; May, R. Alan; Gupta, Gaurav; Stevenson, Keith J.; Johnston, Keith P.

    2010-01-01

    Highly ordered mesoporous titanium dioxide (titania, TiO 2 ) thin films on indium-tin-oxide (ITO) coated glass were prepared via a Pluronic (P123) block copolymer template and a hydrophilic TiO 2 buffer layer. The contraction of the 3D hexagonal array of P123 micelles upon calcination merges the titania domains on the TiO 2 buffer layer to form mesoporous films with a mesochannel diameter of approximately 10 nm and a pore-to-pore distance of 10 nm. The mesoporous titania films on TiO 2 -buffered ITO/glass featured an inverse mesospace with a hexagonally-ordered structure, whereas the films formed without a TiO 2 buffer layer had a disordered microstructure with submicron cracks because of non-uniform water condensation on the hydrophobic ITO/glass surface. The density of the mesoporous film was 83% that of a bulk TiO 2 film. The optical band gap of the mesoporous titania thin film was approximately 3.4 eV, larger than that for nonporous anatase TiO 2 (∼ 3.2 eV), suggesting that the nanoscopic grain size leads to an increase in the band gap due to weak quantum confinement effects. The ability to form highly-ordered mesoporous titania films on electrically conductive and transparent substrates offers the potential for facile fabrication of high surface area semiconductive films with small diffusion lengths for optoelectronics applications.

  12. Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

    Science.gov (United States)

    Qiu, Fei; Xu, Zhimou

    2009-08-01

    In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

  13. Effect of electrode type in the resistive switching behaviour of TiO2 thin films

    International Nuclear Information System (INIS)

    Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

    2013-01-01

    The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

  14. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Sekhar, K. C.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2013-11-01

    The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage ( C- V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

  15. Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO_2 seed layer

    International Nuclear Information System (INIS)

    Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Khusaimi, Z.; Rusop, M.

    2016-01-01

    Titanium dioxide (TiO_2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO_2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO_2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO_2 seed layer of 0.100 M. PL spectra of the TiO_2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO_2 seed layer.

  16. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    International Nuclear Information System (INIS)

    Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

    2014-01-01

    Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  17. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  18. Infrared reflectance measurement for InN thin film characterization

    International Nuclear Information System (INIS)

    Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

    2006-01-01

    Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Preparation of Porous F-WO3/TiO2 Films with Visible-Light Photocatalytic Activity by Microarc Oxidation

    Directory of Open Access Journals (Sweden)

    Chung-Wei Yeh

    2012-01-01

    Full Text Available Porous F-WO3/TiO2 (mTiO2 films are prepared on titanium sheet substrates using microarc oxidation (MAO technique. The X-ray diffraction patterns show that visible-light (Vis enabling mTiO2 films with a very high content of anatase TiO2 and high loading of WO3 are successfully synthesized at a low applied voltage of 300 V using electrolyte contenting NaF and Na2WO4 without subsequent heat treatment. The cross-sectional transmission electron microscopy micrograph reveals that the mTiO2 films feature porous networks connected by many micron pores. The diffused reflection spectrum displays broad absorbance across the UV-Vis regions and a significant red shift in the band gap energy (∼2.23 eV for the mTiO2 film. Owing to the high specific surface area from the porous microstructure, the mTiO2 film shows a 61% and 50% rate increase in the photocatalytic dye degradation, as compared with the N,C-codoped TiO2 films under UV and Vis irradiation, respectively.

  20. Large improvement of electron extraction from CdSe quantum dots into a TiO2 thin layer by N3 dye coabsorption

    International Nuclear Information System (INIS)

    Mora-Sero, Ivan; Dittrich, Thomas; Susha, Andrei S.; Rogach, Andrey L.; Bisquert, Juan

    2008-01-01

    Extraction of electrons and holes photogenerated in CdSe quantum dots (QD) of 2.3 nm diameter, is monitored by Surface Photovoltage Spectroscopy. The extraction of electrons into a thin TiO 2 layer increases five-fold by absorption of N3 dye molecules on top of the QD layer. This process is facilitated by efficient hole extraction from the valence band of the QDs to the ground state of the N3 dye. Our results represent a direct measurement of charge separation in the N3/QD/TiO 2 system

  1. Fabrication of Lead-Free Bi0.5Na0.5TiO3 Thin Films by Aqueous Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Mads Christensen

    2017-02-01

    Full Text Available Piezoelectric ceramics are widely used in actuator applications, and currently the vast majority of these devices are based on Pb ( Zr , Ti O 3 , which constitutes environmental and health hazards due to the toxicity of lead. One of the most promising lead-free material systems for actuators is based on Bi 0 . 5 Na 0 . 5 TiO 3 (BNT, and here we report on successful fabrication of BNT thin films by aqueous chemical solution deposition. The precursor solution used in the synthesis is based on bismuth citrate stabilized by ethanolamine, NaOH , and a Ti-citrate prepared from titanium tetraisopropoxide and citric acid. BNT thin films were deposited on SrTiO 3 and platinized silicon substrates by spin-coating, and the films were pyrolized and annealed by rapid thermal processing. The BNT perovskite phase formed after calcination at 500 °C in air. The deposited thin films were single phase according to X-ray diffraction, and the microstructures of the films shown by electron microscopy were homogeneous and dense. Decomposition of the gel was thoroughly investigated, and the conditions resulting in phase pure materials were identified. This new aqueous deposition route is low cost, robust, and suitable for development of BNT based thin film for actuator applications.

  2. Above room temperature ferromagnetism in Si:Mn and TiO(2-delta)Co.

    Science.gov (United States)

    Granovsky, A; Orlov, A; Perov, N; Gan'shina, E; Semisalova, A; Balagurov, L; Kulemanov, I; Sapelkin, A; Rogalev, A; Smekhova, A

    2012-09-01

    We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO(2-delta) magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 x 10(16) cm(-2). The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO(2-delta):Co thin films were deposited on LaAlO3 (001) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2 x 10(-6)-2 x 10(-4) Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO(2-delta):Co thin films at low (< 1%) volume fraction of Co.

  3. Pulsed Photoinitiated Fabrication of Inkjet Printed Titanium Dioxide/Reduced Graphene Oxide Nanocomposite Thin Films.

    Science.gov (United States)

    Bourgeois, Briley; Luo, Sijun; Riggs, Brian; Ji, Yaping; Adireddy, Shiva; Schroder, Kurt; Farnsworth, Stan; Chrisey, Douglas B; Escarra, Matthew

    2018-05-08

    This work reports a new technique for scalable and low temperature processing of nanostructured-TiO2 thin films, allowing for practical manufacturing of TiO2 based devices such as perovskite solar cells at low temperature or on flexible substrates. Dual layers of dense and mesoporous TiO2/graphitic oxide nanocomposite films are synthesized simultaneously using inkjet printing and pulsed photonic irradiation. Investigation of process parameters including precursor concentration (10-20 wt%) and exposure fluence (4.5-8.5 J/cm2) reveals control over crystalline quality, graphitic oxide phase, film thickness, dendrite density, and optical properties. Raman spectroscopy shows the E¬g peak, characteristic of anatase phase titania, increases in intensity with higher photonic irradiation fluence, suggesting increased crystallinity through higher fluence processing. Film thickness and dendrite density is shown to increase with precursor concentration in the printed ink. The dense base layer thickness was controlled between 20 nm to 80 nm. The refractive index of the films is determined by ellipsometry to be 1.92 +/- 0.08 at 650 nm. Films exhibit an energy weighted optical transparency of 91.1%, in comparison to 91.3% of a thermally processed film, when in situ carbon materials were removed. Transmission and diffuse reflectance are used to determine optical band gaps of the films ranging from 2.98 eV to 3.38 eV in accordance with the photonic irradiation fluence and suggests tunability of TiO2 phase composition. The sheet resistance of the synthesized films is measured to be 14.54 +/- 1.11 Ω/□ and 28.90 +/- 2.24 Ω/□ for films as-processed and after carbon removal, respectively, which is comparable to high temperature processed TiO2 thin films. The studied electrical and optical properties of the light processed films show comparable results to traditionally processed TiO2 while offering the distinct advantages of scalable manufacturing, low-temperature processing

  4. Composition and crystal structure of N doped TiO2 film deposited at different O2 flow rate by direct current sputtering.

    Science.gov (United States)

    Ding, Wanyu; Ju, Dongying; Chai, Weiping

    2011-06-01

    N doped Ti02 films were deposited by direct current pulse magnetron sputtering system at room temperature. The influence of 02 flow rate on the crystal structure of deposited films was studied by Stylus profilometer, X-ray photoelectron spectroscopy, and X-ray diffractometer. The results indicate that the 02 flow rate strongly controls the growth behavior and crystal structure of N doped Ti02 film. It is found that N element mainly exists as substitutional doped state and the chemical stiochiometry is near to TiO1.68±0.06N0.11±0.01 for all film samples. N doped Ti02 film deposited with 2 sccm (standard-state cubic centimeter per minute) 02 flow rate is amorphous structure with high growth rate, which contains both anatase phase and rutile phase crystal nucleuses. In this case, the film displays the mix-phase of anatase and rutile after annealing treatment. While N doped Ti02 film deposited with 12 cm(3)/min 02 flow rate displays anatase phase before and after annealing treatment. And it should be noticed that no TiN phase appears for all samples before and after annealing treatment. Copyright © 2011 The Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

  5. Integration of High-Performance Nanocrystalline TiO2 Photoelectrodes for N719-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Ke-Jian Jiang

    2013-01-01

    Full Text Available We report on enhanced performance of N719-sensitized TiO2 solar cells (DSCs incorporating size and photoelectron diffusion-controlled TiO2 as sensitizer-matched light-scatter layers on conventional nanocrystalline TiO2 electrodes. The double-layered N719/TiO2 composite electrode with a high dye-loading capacity exhibits the diffused reflectance of more than 50% in the range of λ = 650–800 nm, even when the films are coupled with the titania nanocrystalline underlayer in the device. As a result, the increased near-infrared light-harvesting produces a high light-to-electricity conversion efficiency of over 9% mainly due to the significant increase of Jsc. Such an optical effect of the NIR-light scattering TiO2 electrodes will be beneficial when the sensitizers with low molar extinction coefficients, such as N719, are introduced in the device.

  6. Physics properties of TiO_2 films produced by dip-coating technique

    International Nuclear Information System (INIS)

    Teloeken, A.C.; Alves, A.K.; Berutti, F.A.; Tabarelli, A.; Bergmann, C.P.

    2014-01-01

    The use of titanium dioxide (TiO_2) as a photocatalyst to produce hydrogen has been of great interest because of their chemical stability, low cost and non-toxicity. TiO_2 occurs in three different crystal forms: rutile, anatase and brokita. Among these, the anatase phase generally exhibits the best photocatalytic behavior, while the rutile phase is the most stable. Among the various techniques of deposition, dip-coating technique produces films with good photocatalytic properties, using simple and inexpensive equipment. In this work TiO_2 films were obtained by dip-coating. The films were characterized using X-ray diffraction, scanning electron microscopy, profilometry, contact angle measurements and photocurrent. The microstructure and physical properties were evaluated in relation of the temperature and the addition of an additive. (author)

  7. Synthesis and photocatalytic properties of porous TiO2 films prepared by ODA/sol-gel method

    International Nuclear Information System (INIS)

    Zhang Wenjie; Bai Jiawei

    2012-01-01

    Porous TiO 2 films were deposited on SiO 2 pre-coated glass-slides by sol-gel method using octadecylamine (ODA) as template. The amount of ODA in the sol played an important role on the physicochemical properties and photocatalytic performance of the TiO 2 films. The films prepared at different conditions were all composed of anatase titanium dioxide crystals, and TiO 2 crystalline size got larger with increasing ODA amount. The maximum specific surface area of 41.5 m 2 /g was obtained for TiO 2 powders prepared from titanium sol containing 2.0 g ODA. Methyl orange degradation rate was enhanced along with increasing ODA amount and reached the maximal value at 2.0 g addition of ODA. After 40 min of UV-light irradiation, methyl orange degradation rate reached 30.5% on the porous film, which was about 10% higher than that on the smooth film. Porous TiO 2 film showed almost constant activity with slight decrease from 30.5% to 28.5% after 4 times of recycles.

  8. Role of oxygen in enhancing N-type conductivity of CuInS2 thin films

    International Nuclear Information System (INIS)

    Rabeh, M. Ben; Kanzari, M.; Rezig, B.

    2007-01-01

    Post-growth treatments in air atmosphere were performed on CuInS 2 films prepared by the single-source thermal evaporation method. Their effect on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical reflection and transmission and resistance measurements. The films were annealed from 100 to 350 deg. C in air. The stability of the observed N-type conductivity after annealing depends strongly on the annealing temperature. Indeed it is shown that for annealing temperatures above 200 deg. C the N-type conductivity is stable. The resistance of the N-CuInS 2 thin films correlates well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV

  9. Nanoscale Optimization and Statistical Modeling of Photoelectrochemical Water Splitting Efficiency of N-Doped TiO2 Nanotubes

    KAUST Repository

    Isimjan, Tayirjan T.

    2014-12-19

    Highly ordered nitrogen-doped titanium dioxide (N-doped TiO2) nanotube array films with enhanced photo-electrochemical water splitting efficiency (PCE) for hydrogen generation were fabricated by electrochemical anodization, followed by annealing in a nitrogen atmosphere. Morphology, structure and composition of the N-doped TiO2 nanotube array films were investigated by FE-SEM, XPS, UV-Vis and XRD. The effect of annealing temperature, heating rate and annealing time on the morphology, structure, and photo-electrochemical property of the N-doped TiO2 nanotube array films were investigated. A design of experiments method was applied in order to minimize the number of experiments and obtain a statistical model for this system. From the modelling results, optimum values for the influential factors were obtained in order to achieve the maximum PCE. The optimized experiment resulted in 7.42 % PCE which was within 95 % confidence interval of the predicted value by the model. © 2014 Springer Science+Business Media.

  10. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  11. Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

    International Nuclear Information System (INIS)

    Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

    2014-01-01

    Stable n-doping of WSe 2 using thin films of SiN x deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN x act to dope WSe 2 thin flakes n-type via field-induced effect. The electron concentration in WSe 2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN x through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe 2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe 2 n-MOSFETs with a mobility of ∼70 cm 2 /V s

  12. Inkjet-printed transparent nanowire thin film features for UV photodetectors

    KAUST Repository

    Chen, Shih Pin; Duran Retamal, Jose Ramon; Lien, Der Hsien; He, Jr-Hau; Liao, Ying Chih

    2015-01-01

    In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable

  13. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  14. Synthesis of TiO2-doped SiO2 composite films and its applications

    Indian Academy of Sciences (India)

    Wintec

    structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.

  15. Investigations of structural, morphological and optical properties of Cu:ZnO/TiO2/ZnO and Cu:TiO2/ZnO/TiO2 thin films prepared by spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available The aim of this research work is presented a comparison study of Cu:ZnO/TiO2/ZnO (Cu:ZTZ and Cu:TiO2/ZnO/TiO2 (Cu:TZT thin films deposited by spray pyrolysis technique on FTO substrates. After deposition, these films are annealed at 500 °C. XRD confirms the anatase phase of TiO2 and Hexagonal wurtzite phase of ZnO. SEM shows that Cu:TZT has more porous surface than Cu:ZTZ and also the root mean square (RMS roughness of Cu:TZT film is 48.96 and Cu:ZTZ film is 32.69. The calculated optical band gaps of Cu:TZT and Cu:ZTZ thin films are 2.65 eV and 2.6 eV respectively, measured by UV–Vis spectrophotometer. This work provides an environment friendly and low cost use of an abundant material for highly efficient dye sensitized solar cells (DSSCs. Keywords: Multilayer films, ZnO, TiO2, Cu

  16. Unraveling the charge transfer/electron transport in mesoporous semiconductive TiO2 films by voltabsorptometry.

    Science.gov (United States)

    Renault, Christophe; Nicole, Lionel; Sanchez, Clément; Costentin, Cyrille; Balland, Véronique; Limoges, Benoît

    2015-04-28

    In this work, we demonstrate that chronoabsorptometry and more specifically cyclic voltabsorptometry are particularly well suited techniques for acquiring a comprehensive understanding of the dynamics of electron transfer/charge transport within a transparent mesoporous semiconductive metal oxide film loaded with a redox-active dye. This is illustrated with the quantitative analysis of the spectroelectrochemical responses of two distinct heme-based redox probes adsorbed in highly-ordered mesoporous TiO2 thin films (prepared from evaporation-induced self-assembly, EISA). On the basis of a finite linear diffusion-reaction model as well as the establishment of the analytical expressions governing the limiting cases, it was possible to quantitatively analyse, predict and interpret the unusual voltabsorptometric responses of the adsorbed redox species as a function of the potential applied to the semiconductive film (i.e., as a function of the transition from an insulating to a conductive state or vice versa). In particular, we were able to accurately determine the interfacial charge transfer rates between the adsorbed redox species and the porous semiconductor. Another important and unexpected finding, inferred from the voltabsorptograms, is an interfacial electron transfer process predominantly governed by the extended conduction band states of the EISA TiO2 film and not by the localized traps in the bandgap. This is a significant result that contrasts those previously observed for dye-sensitized solar cells formed of randomly sintered TiO2 nanoparticles, a behaviour that was ascribed to a particularly low density of localized surface states in EISA TiO2. The present methodology also provides a unique and straightforward access to an activation-driving force relationship according to the Marcus theory, thus opening new opportunities not only to investigate the driving-force effects on electron recombination dynamics in dye-sensitized solar cells but also to study the

  17. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    Hou Xinggang; Ma Jun; Liu Andong; Li Dejun; Huang Meidong; Deng Xiangyun

    2010-01-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  18. Photocatalytic sterilization of TiO2 films coated on Al fiber

    International Nuclear Information System (INIS)

    Luo Li; Miao Lei; Tanemura, Sakae; Tanemura, Masaki

    2008-01-01

    Photocatalytic TiO 2 films were coated on Al fiber by sol-gel dip-coating method, and then annealed. The crystal structure and morphology of the films were performed by XRD, TEM and SEM. Photocatalytic sterilization of the films was investigated in O 2 atmosphere through purifying the aqueous solution with facultative aerobe (Bacillus cereus), aerobe (Pseudomonas aeruginosa) and anaerobe (Staphylococcus aureus, Enterococcus faecalis and Escherichia coli). In the presence of O 2 , it benefits to generate O 2 · - and ·OH at the first stage of the photocatalytic reaction, while the excess O 2 restrains the anaerobe from reproducing and accelerates the reproducing for the aerobe at the second stage of reaction. As a result, it was found that the crystal of TiO 2 films is anatase phase and the films have excellent sterilization effect against facultative aerobe and anaerobe. Nevertheless, it only decreased the bioactivity against aerobe in a short time

  19. Effect of deposition temperature of TiO2 on the piezoelectric property of PbTiO3 film grown by PbO gas phase reaction sputtering

    International Nuclear Information System (INIS)

    Kim, Jiyoon; Kim, Yunseok; Park, Moonkyu; No, Kwangsoo; Hong, Seungbum; Buehlmann, Simon; Kim, Yong Kwan

    2010-01-01

    A 17 nm thick PbTiO 3 (PTO) films were fabricated via PbO gas phase reaction with TiO 2 starting layer in a sputtering chamber. The influence of deposition temperature of TiO 2 on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO 2 deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.

  20. H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

    2017-02-28

    Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

  1. Nanocrystalline TiO2 Composite Films for the Photodegradation of Formaldehyde and Oxytetracycline under Visible Light Irradiation

    Directory of Open Access Journals (Sweden)

    Min Wei

    2017-06-01

    Full Text Available In order to effectively photodegradate organic pollutants, ZnO composite and Co-B codoped TiO2 films were successfully deposited on glass substrates via a modified sol-gel method and a controllable dip-coating technique. Combining with UV–Vis diffuse reflectance spectroscopy (DRS and photoluminescence spectra (PL analyses, the multi-modification could not only extend the optical response of TiO2 to visible light region but also decrease the recombination rate of electron-hole pairs. XRD results revealed that the multi-modified TiO2 film had an anatase-brookite biphase heterostructure. FE-SEM results indicated that the multi-modified TiO2 film without cracks was composed of smaller round-like nanoparticles compared to pure TiO2. BET surface area results showed that the specific surface area of pure TiO2 and the multi-modified TiO2 sample was 47.8 and 115.8 m2/g, respectively. By degradation of formaldehyde and oxytetracycline, experimental results showed that the multi-modified TiO2 film had excellent photodegradation performance under visible light irradiation.

  2. Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

    Science.gov (United States)

    Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

    2018-06-01

    In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

  3. Asymmetric photoelectric property of transparent TiO2 nanotube films loaded with Au nanoparticles

    International Nuclear Information System (INIS)

    Wang, Hui; Liang, Wei; Liu, Yiming; Zhang, Wanggang; Zhou, Diaoyu; Wen, Jing

    2016-01-01

    Highlights: • Highly transparent films of TiO 2 nanotube arrays were directly fabricated on FTO glasses. • Semitransparent TNT-Au composite films were obtained and exhibited excellent photoelectrocatalytic ability. • Back-side of TNT-Au composite films was firstly irradiated and tested to compare with front-side of films. - Abstract: Semitransparent composite films of Au loaded TiO 2 nanotubes (TNT-Au) were prepared by sputtering Au nanoparticles on highly transparent TiO 2 nanotubes films, which were fabricated directly on FTO glasses by anodizing the Ti film sputtered on the FTO glasses. Compared with pure TNT films, the prepared TNT-Au films possessed excellent absorption ability and high photocurrent response and improved photocatalytic activity under visible-light irradiation. It could be concluded that Au nanoparticles played important roles in improving the photoelectrochemical performance of TNT-Au films. Moreover, in this work, both sides of TNT-Au films were researched and compared owing to theirs semitransparency. It was firstly found that the photoelectric activity of TNT-Au composite films with back-side illumination was obviously superior to front-side illumination.

  4. Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

    International Nuclear Information System (INIS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-01-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  5. Microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang Tianjin; Li Songzhan; Zhang Baishun; Pan Ruikun; Jiang Juan; Huang Weihua

    2005-01-01

    Ba 0.65 Sr 0.35 TiO 3 thin films have been prepared by RF magnetron sputtering. The crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), scan electronic microstructure (SEM) and atom force microstructure (AFM). As-deposited thin films were found to be amorphous. The more intense characteristic diffraction peaks and improved crystallization can be observed in (Ba,Sr)TiO 3 (BST) thin films deposited at high temperatures and annealed at higher than 650degC. Optical constants were determined from transmittance spectra by using the envelope method. The refractive index increased from 1.778 to 1.961 as the substrate temperature increased from 560 to 650degC. Both the refractive index and extinction coefficient increased with annealing temperature. The refractive index and extinction coefficient increased when the oxygen-to-argon ratio increased from 1:4 to 1:1. The dispersion of relation of the extinction coefficient vs wavelength was also investigated. The optical band gap of BST thin films was found to be about 3.56 eV, which decreased apparently with increasing annealing temperature. (author)

  6. Effects of palladium coatings on oxygen sensors of titanium dioxide thin films

    International Nuclear Information System (INIS)

    Castaneda, L.

    2007-01-01

    Titanium dioxide (TiO 2 -anatase phase) thin films were deposited by the ultrasonic spray pyrolysis technique employing titanium (IV) oxide acetylacetonate (TiO(acac) 2 ) dissolved in pure methanol as a source material. In order to prepare oxygen sensors, TiO 2 thin films were deposited on interdigitated gold electrodes with contacted alumina substrates. Palladium (Pd) coatings were carried out by vacuum thermal evaporation through a metallic mask. The effect of the surface additive (Pd) on the response of the thin film TiO 2 oxygen sensors was monitored in a mixture with zero-grade air. The electrical characterization (monitoring of the electrical surface resistance with the operation temperature) of the sensors in an atmosphere of oxygen (diluted in zero-grade air) was performed in a vacuum chamber (10 -6 Torr), where the gas pressure can be controlled. The films sensitivity was estimated by the following relation: s=R gas -R 0 /R 0 . The response time of the sensor is defined to be the time needed to reach a 0.9R 0 value when the oxygen excess is removed. The gas-sensing properties of TiO 2 sensors in an atmosphere of 10 4 ppm of oxygen were measured between 100 and 450 deg. C. Experimental results obtained using palladium as a surface additive show that the sensitivity reaches a stationary value of 1.18 for O 2 concentration of 100ppm in zero-grade air at 300 deg. C, which is as high as those reported for oxygen sensors prepared with more expensive and complex techniques. The role and activity of palladium coatings incorporated on solid-state oxygen sensors are determined by their chemical state, aggregation form and interaction with the metal-oxide semiconductor

  7. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  8. Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light.

    Science.gov (United States)

    Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

    2017-12-01

    We report the preparation of TiO 2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi 2 S 3 , to improve the photocathodic protection property of TiO 2 for metals under visible light. Bi 2 S 3 /TiO 2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi 2 S 3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO 2 and orthorhombic Bi 2 S 3 and exhibited a high visible light response. The photocurrent density of Bi 2 S 3 /TiO 2 was significantly higher than that of pure TiO 2 under visible light. The sensitization of Bi 2 S 3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO 2 . The Bi 2 S 3 /TiO 2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

  9. Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light

    Science.gov (United States)

    Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

    2017-01-01

    We report the preparation of TiO2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi2S3, to improve the photocathodic protection property of TiO2 for metals under visible light. Bi2S3/TiO2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi2S3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO2 and orthorhombic Bi2S3 and exhibited a high visible light response. The photocurrent density of Bi2S3/TiO2 was significantly higher than that of pure TiO2 under visible light. The sensitization of Bi2S3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO2. The Bi2S3/TiO2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

  10. TiO2 coatings via atomic layer deposition on polyurethane and polydimethylsiloxane substrates: Properties and effects on C. albicans growth and inactivation process

    Science.gov (United States)

    Pessoa, R. S.; dos Santos, V. P.; Cardoso, S. B.; Doria, A. C. O. C.; Figueira, F. R.; Rodrigues, B. V. M.; Testoni, G. E.; Fraga, M. A.; Marciano, F. R.; Lobo, A. O.; Maciel, H. S.

    2017-11-01

    Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO2) thin films were successful obtained on polyurethane (PU) and polydimethylsiloxane (PDMS) substrates using ALD. The effect of TiO2 films on Candida albicans growth and inactivation process were also systematic discussed. TiCl4 and H2O were used as precursors at 80 °C, while the reaction cycle number ranged from 500 to 2000. Several chemical, physical and physicochemical techniques were used to evaluate the growth kinetics, elemental composition, material structure, chemical bonds, contact angle, work of adhesion and surface morphology of the ALD TiO2 thin films grown on both substrates. For microbiological analyses, yeasts of standard strains of C. albicans were grown on non- and TiO2-coated substrates. Next, the antifungal and photocatalytic activities of the TiO2 were also investigated by counting the colony-forming units (CFU) before and after UV-light treatment. Chlorine-doped amorphous TiO2 films with varied thicknesses and Cl concentration ranging from 2 to 12% were obtained. In sum, the ALD TiO2 films suppressed the yeast-hyphal transition of C. albicans onto PU, however, a high adhesion of yeasts was observed. Conversely, for PDMS substrate, the yeast adhesion did not change, as observed in control. Comparatively to control, the TiO2-covered PDMS had a reduction in CFU up to 59.5% after UV treatment, while no modification was observed to TiO2-covered PU. These results pointed out that ALD chlorine-doped amorphous TiO2 films grown on biomedical polymeric surfaces may act as fungistatic materials. Furthermore, in case of contamination, these materials may also behave as antifungal materials under UV light exposure.

  11. Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

    Directory of Open Access Journals (Sweden)

    C. G. DIGHAVKAR

    2009-02-01

    Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

  12. Influência do tipo de ácido e tempo de envelhecimento na atividade fotocatalítica de filmes finos de TiO2

    Directory of Open Access Journals (Sweden)

    Liana Key Okada Nakamura

    2011-01-01

    Full Text Available TiO2 thin films were prepared by the sol-gel method using different acids (HCl and HAc, with a parallel evaluation of the gel ageing effects on the film properties. After the thermal treatments, the resulting materials were characterized through gravimetric analysis, UV-VIS spectrophotometry (from which optical parameters such as band gap was derived, XRD, morphological surface analysis (AFM and photocatalytic activity. The majority of the obtained thin films parameters were similar independent of the acid type and the ageing time of the gel. Nevertheless, a visible effect of the surface morphology properties on the films and their photocatalytic activity was observed.

  13. Superior environment resistance of quartz crystal microbalance with anatase TiO2/ZnO nanorod composite films

    International Nuclear Information System (INIS)

    Qiang, Wei; Wei, Li; Shaodan, Wang; Yu, Bai

    2015-01-01

    Graphical abstract: ZnO nanorod array being prepared by an in situ method on the QCM coated with Au film via hydrothermal process and surface modification with coated TiO 2 by sol–gel methods to form a superhydrophobic TiO 2 /ZnO composite film the anatase TiO 2 /ZnO nanorod composite film with a sharp, pencil-like structure exhibiting excellent superhydrophobicity (water contact angle of 155°), non-sticking water properties, and an autonomous cleaning property under UV irradiation. The anatase TiO 2 /ZnO nanorod composite film facilitates the precise measurement and extended lifetime of the QCM for the detection of organic gas molecules. - Highlights: • This work combines, for the first time, the advantage of the TiO 2 /ZnO composite film on photocatalysis and reversible super-hydrophobic and super-hydrophilic transition, and puts forward a solution to satisfy weatherability of quartz crystal microbalance in long-term application. • The anatase TiO 2 /ZnO nanorod composite film with pencil structure exhibit excellent super-hydrophobicity (water contact angle can reach 155°), no-sticking water properties and self-cleaning property under UV irradiation. • The photocatalysis and reversible super-hydrophobic and super-hydrophilic transition of the TiO 2 /ZnO nanorod composite film is stable in long-term application. - Abstract: The precise measurement of quartz crystal microbalance (QCM) in the detection and weighing of organic gas molecules is achieved due to excellent superhydrophobicity of a deposited film composite. Photocatalysis is utilized as a method for the self-cleaning of organic molecules on the QCM for extended long-term stability in the precision of the instrument. In this paper, ZnO nanorod array is prepared via in situ methods on the QCM coated with Au film via hydrothermal process. Subsequently, a TiO 2 /ZnO composite film is synthesized by surface modification with TiO 2 via sol–gel methods. Results show the anatase TiO 2 /ZnO nanorod

  14. Alkali passivation mechanism of sol-gel derived TiO2-SiO2 films coated on soda-lime-silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering

    1992-09-01

    TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.

  15. AC plasma induced modifications in Sb{sub 2}S{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M; Martinez, H [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Castillo, F [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-543, 04510, Mexico D. F. (Mexico); Pena, Y [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, N.L (Mexico); Sanchez-Juarez, A, E-mail: ciro@nucleares.unam.m [Centro de Investigacion en EnergIa, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n Col. Centro, Temixco, Morelos, C.P. 62580 (Mexico)

    2010-01-01

    Sb{sub 2}S{sub 3} thin films, deposited by the chemical bath deposition method, were treated with N{sub 2} plasma at 3.0 Torr during several minutes. The as-prepared Sb{sub 2}S{sub 3} thin films and films treated with N{sub 2} plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb{sub 2}S{sub 3}thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10{sup 9} to 10{sup 7} ({Omega}cm){sup -1} due to the annealing effect.

  16. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1

  17. Texture control and seeded nucleation of nanosize structures of ferroelectric thin films

    Science.gov (United States)

    Muralt, Paul

    2006-09-01

    An overview is given on nucleation phenomena of Pb(Zr ,Ti)O3 (PZT) thin films on Pt(111)-based substrates. Emphasis is given on in situ growth methods, particularly in situ reactive sputtering from three metallic targets. Growth of PZT thin films is discussed from the point of view of the PbOx-TiO2 phase diagram, PbO vapor pressure, and classical nucleation theory. The role of thin TiO2 affinity layers and spots is explained in the frame of this theory. Activation energies for desorption and chemisorption are adapted to comply with the fact that nucleation rates on TiO2 are much larger than the ones on bare Pt(111). The model reproduces well the PbO surface flux from bare Pt(111) to the affinity spots in the case of PbTiO3 nucleation and the reversed tendency in the case of PZT 40/60 nucleation, explaining experimental observations. The critical size of nuclei was calculated to contain 8-10unit cells for PbTiO3/Pt nucleation and 14-17 for PZT/Pt nucleation.

  18. Fabrication and characterization of anatase/rutile–TiO2 thin films by magnetron sputtering: a review

    Directory of Open Access Journals (Sweden)

    Sakae Tanemura, Lei Miao, Wilfried Wunderlich, Masaki Tanemura, Yukimasa Mori, Shoichi Toh and Kenji Kaneko

    2005-01-01

    Full Text Available This review article summarizes briefly some important achievements of our recent reserach on anatase and/or rutile TiO2 thin films, fabricated by helicon RF magnetron sputtering, with good crystal quality and high density, and gives the-state-of-the-art of the knowledge on systematic interrelationship for fabrication conditions, crystal structure, composition, optical properties, and bactericidal abilities, and on the effective surface treatment to improve the optical reactivity of the obtained films.

  19. Pure and Nb2O5-doped TiO2 amorphous thin films grown by dc magnetron sputtering at room temperature: Surface and photo-induced hydrophilic conversion studies

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Tudose, I.V.; Vernardou, D.; Lygeraki, M.I.; Anastasiadis, S.H.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Photo-induced hydrophilicity of titanium dioxide makes this material one of the most suitable for various coating applications in antifogging mirrors and self-cleaning glasses. The field of functional titanium dioxide coatings is expanding rapidly not only in applications for glass but also in applications for polymer, metal and ceramic materials. The high hydrophilic surface of TiO 2 is interesting for understanding also the basic photon-related surface science of titanium dioxide. In doing so, it is inevitably necessary to understand the relationship between the photoreaction and the surface properties. In this work, photo-induced hydrophilic conversion was evaluated on amorphous pure and niobium oxide-doped titanium dioxide thin films on Corning 1737F glass grown by dc magnetron sputtering technique at room temperature. This study is focused on the influence of the Ar:O ratio during sputtering plasma deposition on thin film surface morphology and subsequent photo-induced hydrophilic conversion results. Structural characterization carried out by X-ray diffraction and atomic force microscopy (AFM) has shown that our films are amorphous and extremely smooth with a surface roughness bellow 1 nm. Contact angle measurements were performed on as-deposited and during/after 10 min UV exposure. We present evidence that the photo-induced hydrophilic conversion of film surface is directly correlated with surface morphology and can be controlled by growth conditions

  20. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

  1. Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO2 Photoanodes

    Directory of Open Access Journals (Sweden)

    Bao-gai Zhai

    2017-01-01

    Full Text Available By increasing the temperature of hydrothermal reactions from 70 to 100°C, vertically aligned ZnO nanorods were grown on the TiO2 thin film in the photoanode of dye-sensitized solar cells (DSSCs as the blocking layer to reduce the electron back recombinations at the TiO2/electrolyte interfaces. The length effects of ZnO nanorods on the photovoltaic performances of TiO2 based DSSCs were investigated by means of scanning electron microscope, X-ray diffractometer, photoluminescence spectrophotometer, and the photocurrent-voltage measurement. Under the illumination of 100 mW/cm2, the power conversion efficiency of DSSC with ZnO nanorods decorated TiO2 thin film as its photoanode can be increased nearly fourfold from 0.27% to 1.30% as the length of ZnO nanorods increases from 300 to 1600 nm. The enhanced efficiency of DSSC with ZnO nanorods decorated TiO2 thin film as the photoanode can be attributed to the larger surface area and the lower defect density in longer ZnO nanorods, which are in favor of more dye adsorption and more efficient transport in the photoanode.

  2. Synthesis of TiO2-loaded Co0.85Se thin films with heterostructure and their enhanced catalytic activity for p-nitrophenol reduction and hydrazine hydrate decomposition

    International Nuclear Information System (INIS)

    Zuo, Yong; Song, Ji-Ming; Niu, He-Lin; Mao, Chang-Jie; Zhang, Sheng-Yi; Shen, Yu-Hua

    2016-01-01

    P-nitrophenol (4-NP) and hydrazine hydrate are considered to be highly toxic pollutants in wastewater, and it is of great importance to remove them. Herein, TiO 2 -loaded Co 0.85 Se thin films with heterostructure were successfully synthesized by a hydrothermal route. The as-synthesized samples were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy and selective-area electron diffraction. The results demonstrate that TiO 2 nanoparticles with a size of about 10 nm are easily loaded on the surface of graphene-like Co 0.85 Se nanofilms, and the NH 3  · H 2 O plays an important role in the generation and crystallization of TiO 2 nanoparticles. Brunauer–Emmett–Teller measurement shows that the obtained nanocomposites have a larger specific surface area (199.3 m 2 g −1 ) than that of Co 0.85 Se nanofilms (55.17 m 2 g −1 ) and TiO 2 nanoparticles (19.49 m 2 g −1 ). The catalytic tests indicate Co 0.85 Se–TiO 2 nanofilms have the highest activity for 4-NP reduction and hydrazine hydrate decomposition within 10 min and 8 min, respectively, compared with the corresponding precursor Co 0.85 Se nanofilms and TiO 2 nanoparticles. The enhanced catalytic performance can be attributed to the larger specific surface area and higher rate of interfacial charge transfer in the heterojunction than that of the single components. In addition, recycling tests show that the as-synthesized sample presents stable conversion efficiency for 4-NP reduction. (paper)

  3. Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

    Energy Technology Data Exchange (ETDEWEB)

    Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

    2013-07-01

    Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

  4. Fabrication of a TiO2-P25/(TiO2-P25+TiO2 nanotubes junction for dye sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Nguyen Huy Hao

    2016-08-01

    Full Text Available The dye sensitized solar cell (DSSC, which converts solar light into electric energy, is expected to be a promising renewable energy source for today's world. In this work, dye sensitized solar cells, one containing a single layer and one containing a double layer, were fabricated. In the double layer DSSC structure, the under-layer was TiO2-P25 film, and the top layer consisted of a mixture of TiO2-P25 and TiO2 nanotubes. The results indicated that the efficiency of the DSSC with the double layer structure was a significant improvement in comparison to the DSSC consisting of only a single film layer. The addition of TiO2-P25 in the top layer caused an improvement in the adsorption of dye molecules on the film rather than on the TiO2 nanotubes only. The presence of the TiO2 nanotubes together with TiO2-P25 in the top layer revealed the enhancement in harvesting the incident light and an improvement of electron transport through the film.

  5. Photoelectrolchemical performance of PbS/CdS quantum dots co-sensitized TiO2 nanosheets array film photoelectrodes

    International Nuclear Information System (INIS)

    Yao, Huizhen; Li, Xue; Liu, Li; Niu, Jiasheng; Ding, Dong; Mu, Yannan; Su, Pengyu; Wang, Guangxia; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Herein, PbS/CdS quantum dots (QDs) co-sensitized titanium dioxide nanosheets array (TiO 2 NSs) films were reported for the first time. The TiO 2 NSs films exposed {001} facets were vertically grown on transparent conductive fluorine-doped tin oxide (FTO) glass substrates by a facile hydrothermal method. The PbS/CdS QDs were assembled on TiO 2 NSs photoelectrode by successive ionic layer adsorption and reaction (SILAR). The X-ray diffraction pattern (XRD) and transmission electron microscopy (TEM) verified that QDs with a diameter less than 20 nm were uniformly anchored on the surface of the TiO 2 NSs films. The QDs co-sensitization can significantly extend the absorption range and increase the absorption property of the photoelectrode by UV–vis absorption spectra. The optimal photoelectrolchemical (PEC) performance of PbS/CdS QDs co-sensitization TiO 2 NSs was with photocurrent density of 6.12 mA cm −2 under an illumination of AM 1.5 G, indicating the TiO 2 NSs films co-sensitized by PbS/CdS QDs have potential applications in solar cells. - Highlights: • TiO 2 nanosheets films were fabricated by a simple hydrothermal. • TiO 2 nanosheets film exposed high energy facets was with gaps. • PbS/CdS co-sensitized TiO 2 nanosheets film was obtained for the first time. • Photocurrent intensity of the novel photoelectrode increased to 6.12 mA cm −2

  6. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    Science.gov (United States)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  7. Tuning the resistive switching properties of TiO2-x films

    Science.gov (United States)

    Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

    2015-03-01

    We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

  8. Structural study of TiO2-based transparent conducting films

    International Nuclear Information System (INIS)

    Hitosugi, T.; Yamada, N.; Nakao, S.; Hatabayashi, K.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We have investigated microscopic structures of sputter and pulsed laser deposited (PLD) anatase Nb-doped TiO 2 transparent conducting films, and discuss what causes the degradation of resistivity in sputter-deposited films. Cross-sectional transmission electron microscope and polarized optical microscope images show inhomogeneous intragrain structures and small grains of ∼10 μm in sputter-deposited films. From comparison with PLD films, these results suggest that homogeneous film growth is the important factor to obtain highly conducting sputter-deposited film

  9. TiO2 nanofiber solid-state dye sensitized solar cells with thin TiO2 hole blocking layer prepared by atomic layer deposition

    International Nuclear Information System (INIS)

    Li, Jinwei; Chen, Xi; Xu, Weihe; Nam, Chang-Yong; Shi, Yong

    2013-01-01

    We incorporated a thin but structurally dense TiO 2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO 2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO 2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO 2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO 2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO 2 blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO 2 layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime

  10. Polaron variable range hopping in TiO2-δ(-0.04=<δ=<0.2) thin films

    International Nuclear Information System (INIS)

    Heluani, S.P.; Comedi, D.; Villafuerte, M.; Juarez, G.

    2007-01-01

    The mechanisms of electrical conduction in TiO 2-δ (-0.04= 2 +Ar gas atmospheres where changes in δ and film structure had been achieved by varying the O 2 flow rate and the substrate temperature. The electrical transport properties of these samples were investigated by measuring the conductivity as a function of temperature between 17K and room temperature. At the temperature range between 200 and 290K the best fit to the experimental data was obtained assuming a dependence characteristic of adiabatic variable range hopping. At lower temperature the activation energy for the conductivity tends to zero. The results suggest that the conduction mechanism is adiabatic small polaron hopping, which switches to conduction in a polaron band at low temperatures

  11. Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

    Science.gov (United States)

    Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

    2017-05-01

    Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

  12. Properties of SrBi2Nb2O9 thin films on Pt-coated Si

    International Nuclear Information System (INIS)

    Avila, R.E.; Navarro, P.O.; Martin, V. del C.; Fernandez, L.M.; Sylvester, G.; Retuert, P.J.; Gramsch, E.

    2002-01-01

    SrBi 2 Nb 2 O 9 powders and thin films, on Pt-coated Si, were synthesised by the sol-gel method. Three-layer thin films appear homogeneous down to the 100 nm scale, polycrystalline in the tetragonal Aurivillius phase, at a average thickness of 40 nm per layer. The index of refraction at the center of the visible range increases with the sintering temperature from roughly 2.1 (at 400 Centigrade) to 2.5 (at 700 Centigrade). The expression n 2 -1 increases linearly with the relative density of the thin films, in similar fashion as previous studies in PbTiO 3 thin films. The dielectric constant in quasistatic and high frequency (1 MHz) modes, is between 160 and 230. (Author)

  13. Comparative analysis of Dye-Sensitized Solar Cells (DSSC) having different nanocrystalline TiO2 layer structures

    International Nuclear Information System (INIS)

    Forcade, Fresnel; Gonzalez, Bernardo; Vigil, Elena; Jennings, James R.; Duna, Halina; Wang, Hongxia; Peter, Laurence M.

    2009-01-01

    Full text: Dye-sensitized solar cells (DSSC) are very prospective because of their low cost and comparatively not so low efficiency. This represents an advantage together with the innocuous character of the constituent materials. We study different types of DSSC. The procedure for making them has been the same except for the TiO 2 layer structure. This layer must be porous and nanocrystalline in order to increase light absorption by the sensitizer. On the other hand, this condition causes that the electrolyte contacts the transparent conducting oxide (TCO) underneath the TiO 2 originating undesired recombinations. Also the electrical contact of the Tio to the TCO depends on the technology used to deposit the TiO 2 . In order to avoid possible leakage currents caused by recombinations from the TCO to the electrolyte and improve TiO 2 -TCO electrical contact, a thin TiO 2 film is placed in between the porous TiO 2 layer and the TCO. Different structures are obtained using different technologies to obtain the thin TiO 2 film. These structures are analyzed from their volt-amperic characteristic, external quantum efficiency spectra and voltage decay observed when light is suppressed. Results obtained allow making recommendations regarding nanocrystalline TiO 2 structure to be used in DSSC. (author)

  14. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  15. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  16. TiO2 coated SnO2 nanosheet films for dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Cai Fengshi; Yuan Zhihao; Duan Yueqing; Bie Lijian

    2011-01-01

    TiO 2 -coated SnO 2 nanosheet (TiO 2 -SnO 2 NS) films about 300 nm in thickness were fabricated on fluorine-doped tin oxide glass by a two-step process with facile solution-grown approach and subsequent hydrolysis of TiCl 4 aqueous solution. The as-prepared TiO 2 -SnO 2 NSs were characterized by scanning electron microscopy and X-ray diffraction. The performances of the dye-sensitized solar cells (DSCs) with TiO 2 -SnO 2 NSs were analyzed by current-voltage measurements and electrochemical impedance spectroscopy. Experimental results show that the introduction of TiO 2 -SnO 2 NSs can provide an efficient electron transition channel along the SnO 2 nanosheets, increase the short current density, and finally improve the conversion efficiency for the DSCs from 4.52 to 5.71%.

  17. Low-temperature preparation and microwave photocatalytic activity study of TiO2-mounted activated carbon

    International Nuclear Information System (INIS)

    Liu Yazi; Yang Shaogui; Hong Jun; Sun Cheng

    2007-01-01

    TiO 2 thin films were deposited on granular activated carbon by a dip-coating method at low temperature (373 K), using microwave radiation to enhance the crystallization of titania nanoparticles. Uniform and continuous anatase titania films were deposited on the surface of activated carbon. BET surface area of TiO 2 -mounted activated carbon (TiO 2 /AC) decreased a little in comparison with activated carbon. TiO 2 /AC possessed strong optical absorption capacity with a band gap absorption edge around 360 nm. The photocatalytic activity did not increase when the as-synthesized TiO 2 /AC was thermally treated, but was much higher than commercial P-25 in degradation of phenol by irradiation of electrodeless discharge lamps (EDLs)

  18. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  19. Evolution of nanostructures of anatase TiO2 thin films grown on (001) LaAlO3

    International Nuclear Information System (INIS)

    Ciancio, Regina; Vittadini, Andrea; Selloni, Annabella; Arpaia, Riccardo; Aruta, Carmela; Miletto Granozio, Fabio; Scotti di Uccio, Umberto; Rossi, Giorgio; Carlino, Elvio

    2013-01-01

    Combining reflection high-energy electron diffraction, high-resolution transmission electron microscopy, and high-angle annular dark field scanning transmission electron microscopy we unveil the existence of a peculiar transition from a three-dimensional to a two-dimensional growth mode in anatase TiO 2 /LaAlO 3 heterostructures. Such a growth dynamics is accompanied by Al interdiffusion from substrate to the growing film up to a critical thickness of 20 nm. With the extra support of ab initio calculations, we show that the crossover between the two growth modes corresponds to the formation of two distinct regions characterized by (103)- and (101)-oriented crystallographic shear superstructures, occurring in the upmost film region and in proximity of the film/substrate interface, respectively.

  20. Effect of Diethanolamine on Property of Thin Film TiO2 in Treating Hexavalent Chromium from Aqueous Solution

    International Nuclear Information System (INIS)

    Kajitvichyanukul, Puangrat; Jirapattarasakul, Sudarat

    2006-01-01

    In this research titanium dioxide thin film was synthesized from hydrolysis and condensation process by sol-gel method. Titanium alkoxide was used as initial substrate. The solvent was ethanal and the additive substance was diethanolamine. All substances are mixed altogether in different ratios. To study the effect of diethanolamine on properties of titanium dioxide thin film, various film analysis were performed which included mass weighing, adhesive test, corrosion test using acid and alkali, surface morphology analysis with scanning electron microscope (SEM), thin film structure analysis using X-ray diffraction (XRD), and photo activity by chromium removal test. It was found that diethanolmine enhanced the film strength and improved the adhesive property. The smooth surface was obtained. This thin film showed the effectiveness in chromium removal with high photo activity. Even tough the developed thin film can remove chromium (VI) efficiently, the reaction rate constant (k) was slightly reduced from that using the normal thin film titanium dioxide (without adding diethanolamine). In addition, the reaction time is required little longer to accomplish the chromium (VI) removal with the same performance

  1. Photoactive TiO2 Films Formation by Drain Coating for Endosulfan Degradation

    Directory of Open Access Journals (Sweden)

    Natalia Tapia-Orozco

    2013-01-01

    Full Text Available Heterogeneous photocatalysis is an advanced oxidation process in which a photoactive catalyst, such as TiO2, is attached to a support to produce free radical species known as reactive oxygen species (ROS that can be used to break down toxic organic compounds. In this study, the draining time, annealing temperature, and draining/annealing cycles for TiO2 films grown by the drain coating method were evaluated using a 23 factorial experimental design to determine the photoactivity of the films via endosulfan degradation. The TiO2 films prepared with a large number of draining/annealing cycles at high temperatures enhanced (P>0.05 endosulfan degradation and superoxide radical generation after 30 minutes of illumination with UV light. We demonstrated a negative correlation (R2=0.69; P>0.01 between endosulfan degradation and superoxide radical generation. The endosulfan degradation rates were the highest at 30 minutes with the F6 film. In addition, films prepared using conditions F1, F4, and F8 underwent an adsorption/desorption process. The kinetic reaction constants, Kapp (min−1, were 0.0101, 0.0080, 0.0055, 0.0048, and 0.0035 for F6, F2, F5, F3, and F1, respectively. The endosulfan metabolites alcohol, ether, and lactone were detected and quantified at varying levels in all photocatalytic assays.

  2. Strain profile and polarization enhancement in Ba0.5Sr0.5TiO3 thin films

    International Nuclear Information System (INIS)

    Amir, F.Z.; Donner, W.; Aspelmeyer, M.; Noheda, B.; Xi, X.X.; Moss, S.C.

    2012-01-01

    The sensitivity of spontaneous polarization to epitaxial strain for both 10 and 50 nm thick Ba 0.5 Sr 0.5 TiO 3 (BSTO) ferroelectric thin films has been studied. Crystal truncation rod (CTR) profiles in the 00L directions at different wavelengths, and grazing incidence diffraction (GID) in the 0K0 direction on a single crystal have been recorded. Modeling of the CTR data gives a detailed picture of the strain and provides clear evidence of the film out-of-plane expansion at the surface, an increase of the polarization, as well as a contraction at the interface. GID data confirm the fitting of the CTR, showing an in-plane expansion of the BSTO film at the interface and a contraction at the surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Influence of nitrogen dopants on N-doped TiO2 electrodes and their applications in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Guo Wei; Shen Yihua; Boschloo, Gerrit; Hagfeldt, Anders; Ma Tingli

    2011-01-01

    Highlights: → Three different types of nanocrystalline N-doped TiO 2 synthesized by several nitrogen dopants. → N-doped DSCs achieves a high conversion efficiency of 8.32%. → Ammonia acts as good nitrogen dopants. → Enhanced photocurrent of ca. 36% in N-doped DSCs. → Less charge are needed to get a high open-circuit voltage in N-doped films. - Abstract: Three different types of nanocrystalline, N-doped TiO 2 electrodes were synthesized using several nitrogen dopants through wet methods. The obtained nanocrystalline, N-doped TiO 2 electrodes possessed different crystallite sizes, surface areas, and N-doping amounts. Characterizations were performed to reveal the nitrogen-doping processes for the wet methods using ammonia, urea, and triethylamine as the nitrogen dopants. Additionally, a high conversion efficiency of 8.32% was achieved by the dye-sensitized solar cells, based on the N-doped TiO 2 electrodes. For instance, in comparison with the commercial P25 (5.76%) and pure anatase TiO 2 electrodes (7.14%), significant improvements (44% and 17%, respectively) in the efficiencies were obtained. The findings also indicated that the ammonia nitrogen dopant was more efficient than other two nitrogen dopants. The electron transports, electron lifetimes, and charge recombination in the dye-sensitized N-doped TiO 2 solar cells also differed from those in the pure TiO 2 -based dye-sensitized solar cells (DSCs). Specifically, an enhanced photocurrent of ca. 36% in N-doped DSCs resulted from the synergistic effects of the high dye uptake and the efficient electron transport. Moreover, the relationship between charge and voltage revealed that less charge was needed to get a high open-circuit voltage in the N-doping films.

  4. The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering

    Directory of Open Access Journals (Sweden)

    Adachi Y.

    2015-06-01

    Full Text Available We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping co-sputtering (DPCS apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.

  5. Dielectric properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu; Pokhodnya, Konstantin

    2015-11-01

    Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

  6. Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Udai P. Singh

    2010-01-01

    Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

  7. All-nanoparticle self-assembly ZnO/TiO₂ heterojunction thin films with remarkably enhanced photoelectrochemical activity.

    Science.gov (United States)

    Yuan, Sujun; Mu, Jiuke; Mao, Ruiyi; Li, Yaogang; Zhang, Qinghong; Wang, Hongzhi

    2014-04-23

    The multilaminated ZnO/TiO2 heterojunction films were successfully deposited on conductive substrates including fluorine-doped tin oxide (FTO) glass and flexible indium tin oxide coated poly(ethylene terephthalate) via the layer-by-layer (LBL) self assembly method from the oxide colloids without using any polyelectrolytes. The positively charged ZnO nanoparticles and the negatively charged TiO2 nanoparticles were directly used as the components in the consecutive deposition process to prepare the heterojunction thin films by varying the thicknesses. Moreover, the crystal growth of both oxides could be efficiently inhibited by the good connection between ZnO and TiO2 nanoparticles even after calcination at 500 °C, especially for ZnO which was able to keep the crystallite size under 25 nm. The as-prepared films were used as the working electrodes in the three-electrode photoelectrochemical cells. Because the well-contacted nanoscale heterojunctions were formed during the LBL self-assembling process, the ZnO/TiO2 all-nanoparticle films deposited on both substrates showed remarkably enhanced photoelectrochemical properties compared to that of the well-established TiO2 LBL thin films with similar thicknesses. The photocurrent response collected from the ZnO/TiO2 electrode on the FTO glass substrate was about five times higher than that collected from the TiO2 electrode. Owing to the absence of the insulating layer of dried polyelectrolytes, the ZnO/TiO2 all-nanoparticle heterojunction films were expected to be used in the photoelectrochemical device before calcination.

  8. Carbamazepine degradation using a N-doped TiO_2 coated photocatalytic membrane reactor: Influence of physical parameters

    International Nuclear Information System (INIS)

    Horovitz, Inna; Avisar, Dror; Baker, Mark A.; Grilli, Rossana; Lozzi, Luca; Di Camillo, Daniela; Mamane, Hadas

    2016-01-01

    Highlights: • UV–vis N-doped TiO_2 was deposited by sol-gel onto Al_2O_3 microfiltration membranes. • Coating decreased permeability by 50 and 12% for 200- and 800-nm Al_2O_3 membranes. • Flow through membrane results in higher reaction rates compared to flow on top. • Higher vis photocatalytic activity for N-doped TiO_2 vs. non-doped TiO_2 membranes. • Mass transfer is a critical parameter for the design of immobilized PMR. - Abstract: Commercial α-Al_2O_3 photocatalytic membranes with a pore size of 200 and 800-nm were coated with N-doped TiO_2 photocatalytic film using a sol-gel technique for concurrent bottom-up filtration and photocatalytic oxidation. X-ray diffraction confirmed that the deposited N-doped TiO_2 films are in the form of anatase with 78–84% coverage of the membrane surface. The concentration of N found by X-ray photoelectron spectroscopy was in the range of 0.3–0.9 atomic percentage. Membrane permeability after coating decreased by 50% and 12% for the 200- and 800-nm membrane substrates, respectively. The impact of operational parameters on the photocatalytic activity (PCA) of the N-doped TiO_2-coated membranes was examined in a laboratory flow cell based on degradation of the model micropollutant carbamazepine, using a solar simulator as the light source. The significant gap in degradation rate between flow through the membrane and flow on the surface of the membrane was attributed both to the hydraulic effect and in-pore PCA. N-doped TiO_2-coated membranes showed enhanced activity for UV wavelengths, in addition to activity under visible light. Experiments of PCA under varying flow rates concluded that the process is in the mass-transfer control regime. Carbamazepine removal rate increased with temperature, despite the decrease in dissolved oxygen concentration.

  9. Phase transformations in sputter-deposited W-doped TiO2 films during annealing in air

    International Nuclear Information System (INIS)

    Saladukhin, I. A.; Abadias, G.

    2013-01-01

    Pure and tungsten-doped TiO 2 films are characterized as amorphous in the as-deposited state by XRD. A crystallization of titanium dioxide occurs during their annealing in air. Depending on the tungsten and nitrogen doping level, anatase or rutile phase formation is observed. Both of these phases are thermally stable in all interval of the temperatures used during annealing. Phase composition and lattice parameter analysis indicates on the formation of substitutional Ti 1 -xW x O 2 films. N-doped Ti 0 .75W 0 .25O 2 film is more resistant against high-temperature oxidation as compared to Ti 0 .74W 0 .26O 2 film and, especially, as compared to Ti 0 .60W 0 .40O 2 film. (authors)

  10. Decolorization of dyeing wastewater in continuous photoreactors using tio2 coated glass tube media

    Directory of Open Access Journals (Sweden)

    Jutaporn Chanathaworn

    2014-02-01

    Full Text Available The present study deals with a decolorization development of malachite green (MG dyeing wastewater using TiO2 thin films coated glass tube media in photoreactor. The TiO2 photocatalyst was synthesized by three methods: TTIP sol-gel, TiO2 powder-modified sol, and TiO2 powder suspension coating on raschig ring glass tube media and was investigated crystallinity phase by SEM, XRD, and AFM. Degradation kinetics of the dyeing wastewater by photocatalytic was carried out under UV light irradiation. The Langmuir first-order model provided the best fit to the experimental data. The catalyst prepared by powder suspension technique and coated on glass tube had given the highest of decolorization kinetics and efficiency. Continuous photoreactor packed with the TiO2 coating media was designed and proven to be the high effectiveness for MG dyeing degradation and stable throughout the recyclability test. The light intensity, dye solution flow rate, and TiO2 loading were the most important parameters that response to decolorization efficiency. The optimum condition of photo decolorization of MG dye solution can be obtained from RSM model. Effectiveness of the synthesized TiO2 thin films using suspension technique and the continuous photoreactor design were obtained with a great potential to be proven for wastewater treatment at industrial scale.

  11. Magneto-optical spectroscopy of diluted magnetic oxides TiO2-δ: Co

    International Nuclear Information System (INIS)

    Gan'shina, E.A.; Granovsky, A.B.; Orlov, A.F.; Perov, N.S.; Vashuk, M.V.

    2009-01-01

    We report an experimental study on transversal Kerr effect (TKE) in magnetic oxide semiconductors TiO 2-δ :Co. The TiO 2-δ : Co thin films were deposited on LaAlO 3 (0 0 1) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2x10 -6 -2x10 -4 Torr. It was obtained that TKE spectra in ferromagnetic samples are extremely sensitive to the Co-volume fraction, the crystalline structure, and technology parameters. The observed well-pronounced peaks in TKE spectra for anatase Co-doped TiO 2films at low Co ( 2-δ matrix that indicates on intrinsic ferromagnetism in these samples. With increase of Co-volume fraction up to 5-8% the fine structure of TKE spectra disappears and magneto-optical response in reflection mode becomes larger than that for thick Co films

  12. Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

    Science.gov (United States)

    Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

    2011-04-01

    The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

  13. Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

    Science.gov (United States)

    Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

    2018-02-01

    The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

  14. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  15. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel; Gnade, Bruce E.

    2017-01-01

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed

  16. Structural Properties of Nanoparticles TiO2/PVA Polymeric Films

    Directory of Open Access Journals (Sweden)

    Samara A. Madhloom

    2018-04-01

    Full Text Available In this research, X-ray diffraction of the powder (PVA polymer, titanium dioxide with two parti-cle sizes and (TiO2 (15.7 nm/PVA and TiO2 (45.7 nm/PVA films have been studied,the amount of polymer is (0.5 g and (0.01g from each particle sizes of nanoparticles will be used. Casting method is used to prepare homogeneous films on glass petri dishes. All parameters ac-counted for the X-ray diffraction; full width half maximum (FWHM, Miller indices (hkl, size of crystalline (D, Specific Surface Area (S and Dislocation Density (δ. The nature of the structural of materials and films will be investigated. The XRD pattern of PVA polymer has semi-crystalline nature and the titanium dioxide with two particle sizes have crystalline structure; ana-tase type. While the mixture between these materials led to appearing some crystalline peaks into XRD pattern of PVA polymer

  17. TiO2 film/Cu2O microgrid heterojunction with photocatalytic activity under solar light irradiation.

    Science.gov (United States)

    Zhang, Junying; Zhu, Hailing; Zheng, Shukai; Pan, Feng; Wang, Tianmin

    2009-10-01

    Coupling a narrow-band-gap semiconductor with TiO(2) is an effective method to produce photocatalysts that work under UV-vis light irradiation. Usually photocatalytic coupled-semiconductors exist mainly as powders, and photocatalytic activity is only favored when a small loading amount of narrow-band-gap semiconductor is used. Here we propose a heavy-loading photocatalyst configuration in which 51% of the surface of the TiO(2) film is covered by a Cu(2)O microgrid. The coupled system shows higher photocatalytic activity under solar light irradiation than TiO(2) and Cu(2)O films. This improved performance is due to the efficient charge transfer between the two phases and the similar opportunity each has to be exposed to irradiation and adsorbates.

  18. Enhanced photoelectrochemical efficiency and stability using a conformal TiO2 film on a black silicon photoanode

    Science.gov (United States)

    Yu, Yanhao; Zhang, Zheng; Yin, Xin; Kvit, Alexander; Liao, Qingliang; Kang, Zhuo; Yan, Xiaoqin; Zhang, Yue; Wang, Xudong

    2017-06-01

    Black silicon (b-Si) is a surface-nanostructured Si with extremely efficient light absorption capability and is therefore of interest for solar energy conversion. However, intense charge recombination and low electrochemical stability limit the use of b-Si in photoelectrochemical solar-fuel production. Here we report that a conformal, ultrathin, amorphous TiO2 film deposited by low-temperature atomic layer deposition (ALD) on top of b-Si can simultaneously address both of these issues. Combined with a Co(OH)2 thin film as the oxygen evolution catalyst, this b-Si/TiO2/Co(OH)2 heterostructured photoanode was able to produce a saturated photocurrent density of 32.3 mA cm-2 at an external potential of 1.48 V versus reversible reference electrode (RHE) in 1 M NaOH electrolyte. The enhanced photocurrent relative to planar Si and unprotected b-Si photoelectrodes was attributed to the enhanced charge separation efficiency as a result of the effective passivation of defective sites on the b-Si surface. The 8-nm ALD TiO2 layer extends the operational lifetime of b-Si from less than half an hour to four hours.

  19. Formation dynamics of FeN thin films on Cu(100)

    KAUST Repository

    Heryadi, Dodi; Schwingenschlö gl, Udo

    2012-01-01

    To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

  20. Enhancement of photoelectric catalytic activity of TiO2 film via Polyaniline hybridization

    International Nuclear Information System (INIS)

    Wang Yajun; Xu Jing; Zong Weizheng; Zhu Yongfa

    2011-01-01

    A Polyaniline (PANI)/TiO 2 film coated on titanium foil was successfully prepared using the sol-gel method followed by a facile chemisorption. Compared with pristine TiO 2 , the photocatalytic (PC) and photoelectrocatalytic (PEC) degradation rates of 2,4-dichlorophenol (2,4-DCP) with the PANI/TiO 2 film were enhanced by 22.2% and 57.5%, respectively. 2,4-DCP can be mineralized more effectively in the presence of PANI/TiO 2 film. The best PEC degradation efficiency of 2,4-DCP with the PANI/TiO 2 film was acquired at an external potential of 1.5 V with a layer of 1 nm thick PANI. The PANI/TiO 2 film was characterized by Raman spectra, Fourier transform infrared spectra (FT-IR), Auger electron spectroscopy (AES), and electrochemical analysis. These results indicated that there was a chemical interaction on the interface of PANI and TiO 2 . This interaction may be of significance to promote the migration efficiency of carriers and induce a synergetic effect to enhance the PC and PEC activities. - Graphical abstract: The effect of PANI content on 2,4-DCP degradation with initial concentration of 50 mg/L, external potential=1.5 V. Inset: degradation rate constants of various PANI/TiO 2 films. Highlights: → Polyaniline/TiO 2 film was prepared using the sol-gel method followed by chemisorption. → Photoelectrocatalytic degradation rate of 2,4-dichlorophenol was enhanced by 57.5%. → The modification of Polyaniline to TiO 2 film caused a rapid charge separation. → Best degradation efficiency was acquired at 1.5 V with 1 nm thick PANI.

  1. Variable range hopping in TiO2 insulating layers for oxide electronic devices

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2012-03-01

    Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

  2. Drying Temperature Dependence of Sol-gel Spin Coated Bilayer Composite ZnO/TiO2 Thin Films for Extended Gate Field Effect Transistor pH Sensor

    Science.gov (United States)

    Rahman, R. A.; Zulkefle, M. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2018-03-01

    This study presents an investigation on zinc oxide (ZnO) and titanium dioxide (TiO2) bilayer film applied as the sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. The influences of the drying temperatures on the pH sensing capability of ZnO/TiO2 were investigated. The sensing performance of the thin films were measured by connecting the thin film to a commercial MOSFET to form the extended gates. By varying the drying temperature, we found that the ZnO/TiO2 thin film dried at 150°C gave the highest sensitivity compared to other drying conditions, with the sensitivity value of 48.80 mV/pH.

  3. Preparation of Ta Te2 thin films by laser ablation

    International Nuclear Information System (INIS)

    Zidan, M.D.; Alkhwam, M.; Alkhasm, M.

    2006-03-01

    The laser ablation system consisting of a vacuum chamber and Nd-YAG laser has been built for deposition TaTe 2 on three different substrates (Silicon, glass, and Aluminium). The surface topography of the prepared thin films has been studied by atomic force microscopy (AFM). TaTe 2 powder was characterized by using x-ray diffraction. The crystallinity of the thin films was examined by x-ray diffraction (XRD). The results show no peaks corresponding TaTe 2 , but there are some indications to the Ta 3 N 5 . (author)

  4. Photocatalytic Activity of TiO2 Thin Films Obtained by the Sputtering RF in Wastewater

    Science.gov (United States)

    Cardona Bedoya, Jairo Armando; Sanchez Velandia, Wilmer Asmed; Delgado Rosero, Miguel Iban; Florido Cuellar, Alex Enrique; Zelaya Angel, Orlando; Mendoza Alvarez, Julio G.

    2011-03-01

    The photocatalytic activity of Ti O2 thin films in wastewater, under an UV irradiation, is studied. The films were prepared on corning glass substrates by the sputtering RF technique. We present evidence on the photocatalytic degradation, carried out by advanced oxidation processes (AOPs) in domestic wastewater pretreated with UASB (upflow anaerobic sludge blanket) reactors. Ti O2 films were illuminated with ultraviolet light during a time of 4 hours (λ ≅ 264 nm). We could see the effect of degraded operation in the absorbance measurement using UV-VIS spectrophotometry. The results show an increased rate of degradation of the wastewater by 30% compared to the values reflected biologically treated wastewater by anaerobic reactors.

  5. In-situ laser processing and microstructural characteristics of YBa2Cu3O7-δ thin films on Si with TiN buffer layer

    International Nuclear Information System (INIS)

    Tiwari, P.; Zheleva, T.; Narayan, J.

    1993-01-01

    The authors have prepared high-quality superconducting YBa 2 Cu 3 O 7 -δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excimer laser ( | = 248 nm ) at substrate temperature of 650 C . Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (S E M), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with TiN parallel Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90-92K with T co (zero resistance temperature) of 84K. The authors have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed in detail

  6. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  7. Microstructured extremely thin absorber solar cells

    DEFF Research Database (Denmark)

    Biancardo, Matteo; Krebs, Frederik C

    2007-01-01

    In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed by press......In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed...

  8. Sol-gel TiO2 colloidal suspensions and nanostructured thin films: structural and biological assessments.

    Science.gov (United States)

    Procopio, Elsa Quartapelle; Colombo, Valentina; Santo, Nadia; Sironi, Angelo; Lenardi, Cristina; Maggioni, Daniela

    2018-02-02

    The role of substrate topography in phenotype expression of in vitro cultured cells has been widely assessed. However, the production of the nanostructured interface via the deposition of sol-gel synthesized nanoparticles (NPs) has not yet been fully exploited. This is also evidenced by the limited number of studies correlating the morphological, structural and chemical properties of the grown thin films with those of the sol-gel 'brick' within the framework of the bottom-up approach. Our work intends to go beyond this drawback presenting an accurate investigation of sol-gel TiO 2 NPs shaped as spheres and rods. They have been fully characterized by complementary analytical techniques both suspended in apolar solvents, by dynamic light scattering (DLS) and nuclear magnetic resonance (NMR) and after deposition on substrates (solid state configuration) by transmission electron microscopy (TEM) and powder x-ray diffraction (PXRD). In the case of suspended anisotropic rods, the experimental DLS data, analyzed by the Tirado-Garcia de la Torre model, present the following ranges of dimensions: 4-5 nm diameter (∅) and 11-15 nm length (L). These results are in good agreement with that obtained by the two solid state techniques, namely 3.8(9) nm ∅ and 13.8(2.5) nm L from TEM and 5.6(1) ∅ and 13.3(1) nm L from PXRD data. To prove the suitability of the supported sol-gel NPs for biological issues, spheres and rods have been separately deposited on coverslips. The cell response has been ascertained by evaluating the adhesion of the epithelial cell line Madin-Darby canine kidney. The cellular analysis showed that titania films promote cell adhesion as well clustering organization, which is a distinguishing feature of this type of cell line. Thus, the use of nanostructured substrates via sol-gel could be considered a good candidate for cell culture with the further advantages of likely scalability and interfaceability with many different materials usable as supports.

  9. Sol-gel TiO2 colloidal suspensions and nanostructured thin films: structural and biological assessments

    Science.gov (United States)

    Quartapelle Procopio, Elsa; Colombo, Valentina; Santo, Nadia; Sironi, Angelo; Lenardi, Cristina; Maggioni, Daniela

    2018-02-01

    The role of substrate topography in phenotype expression of in vitro cultured cells has been widely assessed. However, the production of the nanostructured interface via the deposition of sol-gel synthesized nanoparticles (NPs) has not yet been fully exploited. This is also evidenced by the limited number of studies correlating the morphological, structural and chemical properties of the grown thin films with those of the sol-gel ‘brick’ within the framework of the bottom-up approach. Our work intends to go beyond this drawback presenting an accurate investigation of sol-gel TiO2 NPs shaped as spheres and rods. They have been fully characterized by complementary analytical techniques both suspended in apolar solvents, by dynamic light scattering (DLS) and nuclear magnetic resonance (NMR) and after deposition on substrates (solid state configuration) by transmission electron microscopy (TEM) and powder x-ray diffraction (PXRD). In the case of suspended anisotropic rods, the experimental DLS data, analyzed by the Tirado-Garcia de la Torre model, present the following ranges of dimensions: 4-5 nm diameter (∅) and 11-15 nm length (L). These results are in good agreement with that obtained by the two solid state techniques, namely 3.8(9) nm ∅ and 13.8(2.5) nm L from TEM and 5.6(1) ∅ and 13.3(1) nm L from PXRD data. To prove the suitability of the supported sol-gel NPs for biological issues, spheres and rods have been separately deposited on coverslips. The cell response has been ascertained by evaluating the adhesion of the epithelial cell line Madin-Darby canine kidney. The cellular analysis showed that titania films promote cell adhesion as well clustering organization, which is a distinguishing feature of this type of cell line. Thus, the use of nanostructured substrates via sol-gel could be considered a good candidate for cell culture with the further advantages of likely scalability and interfaceability with many different materials usable as supports.

  10. Relationship between nano/micro structure and physical properties of TiO2-sodium caseinate composite films.

    Science.gov (United States)

    Montes-de-Oca-Ávalos, Juan Manuel; Altamura, Davide; Candal, Roberto Jorge; Scattarella, Francesco; Siliqi, Dritan; Giannini, Cinzia; Herrera, María Lidia

    2018-03-01

    Films obtained by casting, starting from conventional emulsions (CE), nanoemulsions (NE) or their gels, which led to different structures, with the aim of explore the relationship between structure and physical properties, were prepared. Sodium caseinate was used as the matrix, glycerol as plasticizer, glucono-delta-lactone as acidulant to form the gels, and TiO 2 nanoparticles as reinforcement to improve physical behavior. Structural characterization was performed by SAXS and WAXS (Small and Wide Angle X-ray Scattering, respectively), combined with confocal and scanning electron microscopy. The results demonstrate that the incorporation of the lipid phase does not notably modify the mechanical properties of the films compared to solution films. Films from NE were more stable against oil release than those from CE. Incorporation of TiO 2 improved mechanical properties as measured by dynamical mechanical analysis (DMA) and uniaxial tensile tests. TiO 2 macroscopic spatial distribution homogeneity and the nanostructure character of NE films were confirmed by mapping the q-dependent scattering intensity in scanning SAXS experiments. SAXS microscopies indicated a higher intrinsic homogeneity of NE films compared to CE films, independently of the TiO 2 load. NE-films containing structures with smaller and more homogeneously distributed building blocks showed greater potential for food applications than the films prepared from sodium caseinate solutions, which are the best known films. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2013-01-01

    The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

  12. Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge

    Science.gov (United States)

    Kavitha, A.; Kannan, R.; Gunasekhar, K. R.; Rajashabala, S.

    2017-10-01

    Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 μΩ cm to 1800 μΩ cm. Atomic force microscopy studies of the TiN thin films deposited with N2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.

  13. ADSORCIÓN DE ALDEHÍDOS INSATURADOS SOBRE TiO2

    Directory of Open Access Journals (Sweden)

    Natalia Ortega

    2012-01-01

    Full Text Available En el presente trabajo se estudió la adsorción de aldehídos insaturados sobre la superficie del TiO2. Para evaluar su eficiencia como catalizador, se realizaron experimentos de fotocatálisis heterogénea de p-nitrofenol (PNF y una muestra proveniente de efluentes industriales. Se empleó un simulador solar y cuatro sistemas de TiO2: el TiO2-sólo (sin modificar y los sistemas TiO2-dienal constituidos por la adsorción química de 2,4 hexadienal, 2,4 heptadienal y el trans-cinamaldehído sobre la superficie del TiO2. La adsorción de los aldehídos insaturados sobre el TiO2 se cuantificó empleando los modelos de adsorción de Langmuir y Freundlich. Se evaluó la influencia del pH en los sistemas TiO2-dienal y su efecto en la degradación fotocatalítica del PNF. En condiciones básicas, la constante de velocidad del PNF es mayor al emplear los sistemas TiO2-dienal en comparación con el TiO2-sólo, mientras que en condiciones ácidas se encontró la tendencia opuesta. El sistema TiO2-cina resultó ser el fotocatalizador de mayor eficiencia.

  14. Formation of Ga2O3 by the oxidation of p-type GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pinnisch, Melanie; Reppin, Daniel; Stehr, Jan; Laufer, Andreas; Hofmann, Detlev M.; Meyer, Bruno K. [1. Physikalisches Institut, Justus-Liebig-University, Giessen (Germany)

    2010-07-01

    Both GaN and Ga{sub 2}O{sub 3} are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga{sub 2}O{sub 3} is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga{sub 2}O{sub 3} by thermal treatments in the temperature range from 600 C to 1200 C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.

  15. Formation dynamics of FeN thin films on Cu(100)

    KAUST Repository

    Heryadi, Dodi

    2012-01-01

    To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

  16. Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

    Science.gov (United States)

    Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

    2009-05-15

    For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

  17. Cellulose acetate-based SiO2/TiO2 hybrid microsphere composite aerogel films for water-in-oil emulsion separation

    Science.gov (United States)

    Yang, Xue; Ma, Jianjun; Ling, Jing; Li, Na; Wang, Di; Yue, Fan; Xu, Shimei

    2018-03-01

    The cellulose acetate (CA)/SiO2-TiO2 hybrid microsphere composite aerogel films were successfully fabricated via water vapor-induced phase inversion of CA solution and simultaneous hydrolysis/condensation of 3-aminopropyltrimethoxysilane (APTMS) and tetrabutyl titanate (TBT) at room temperature. Micro-nano hierarchical structure was constructed on the surface of the film. The film could separate nano-sized surfactant-stabilized water-in-oil emulsions only under gravity. The flux of the film for the emulsion separation was up to 667 L m-2 h-1, while the separation efficiency was up to 99.99 wt%. Meanwhile, the film exhibited excellent stability during multiple cycles. Moreover, the film performed excellent photo-degradation performance under UV light due to the photocatalytic ability of TiO2. Facile preparation, good separation and potential biodegradation maked the CA/SiO2-TiO2 hybrid microsphere composite aerogel films a candidate in oil/water separation application.

  18. Electrical properties of resistive switches based on Ba1-χSrχTiO3 thin films prepared by RF co-sputtering

    International Nuclear Information System (INIS)

    Marquez H, A.; Hernandez R, E.; Zapata T, M.; Guillen R, J.; Cruz, M. P.; Calzadilla A, O.; Melendez L, M.

    2010-01-01

    In this work, was proposed the use of Ba 1-χ Sr χ TiO 3 (0≤x≤1) thin films for the construction of metal-insulator-metal heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba 1-χ Sr χ TiO 3 thin films was done by the RF co-sputtering technique using two magnetron sputtering cathodes with BaTiO 3 and SrTiO 3 targets. The chemical composition (x parameter) in the deposited Ba 1-χ Sr χ TiO 3 thin films was varied through the RF powder applied to the targets. The constructed metal-insulator-metal heterostructures were Al/Ba 1-χ Sr χ TiO 3 /nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba 1-χ Sr χ TiO 3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; Sem micrographs showed that Ba 1-χ Sr χ TiO 3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the X-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO 3 lattice and the obtainment of crystalline films for the entire range of the x values. (Author)

  19. Magnetic properties and high frequency characteristics of FeCoN thin films

    Directory of Open Access Journals (Sweden)

    Tae-Jong Hwang

    2016-05-01

    Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  20. TiO2 based photo-catalysts prepared by chemical vapor infiltration (CVI) on micro-fibrous substrates

    International Nuclear Information System (INIS)

    Sarantopoulos, Ch.

    2007-10-01

    This thesis deals with micro-fibrous glass substrates functionalized with TiO 2 . The oxide is deposited as a thin film onto the micro fibres by chemical vapour infiltration (CVI), yielding a photo-catalytic material usable for cleaning polluted air. We studied the relation between the structure of the material and its photo-catalytic efficiency. TiO 2 thin films were prepared at low pressure, in a hot-wall CVD reactor, using Ti(O-iPr) 4 as a precursor. They were characterized by XRD, SEM, EDX, XPS and BET, and by recording the kinetics of decomposition of varied pollutants in solution (orange G, malic acid, imazapyr) and in air (toluene). The conditions favoring the growth of porous films through a columnar growth mode were established by MOCVD-depositing TiO 2 thin films on flat substrates. The subsequent works with micro fibrous thick substrates showed the uniformity of infiltration to be the main factor governing the photo-catalytic efficiency. Operating parameters that optimize infiltration do not yield columnar growth mode. A compromise is necessary. Our photo-catalysts are showing high efficiency comparable, if not higher, to those actually commercialized. These promising results are opening real perspectives for the proposed process. (author)

  1. Enhanced photovoltaic performance of novel TiO2 photoelectrode on TCO substrates for dye-sensitized solar cells.

    Science.gov (United States)

    Nam, Jung Eun; Kwon, Soon Jin; Jo, Hyo Jeong; Yi, Kwang Bok; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-12-01

    In this study, we report synthesis and growth of rutile-anatase TiO2 thin film on fluorine-doped tin oxide (FTO) glass by a two-step hydrothermal method. The effects of additional treatments (i.e., TiCl4 post-treatment and seed layer formation were also studied. Photocurrent-voltage (I-V) measurement of rutile-anatase TiO2 thin film was performed under 1.5 G light illumination. Photovoltaic performance was investigated by incident photon-to-electron conversion efficiency (IPCE), electrochemical impedance spectroscopy (EIS), intensity-modulated photocurrent/photovoltage spectroscopy (IMVS/IMPS) and open-circuit photovoltage decay (OCVD).

  2. Optimization of charge transfer and transport processes at the CdSe quantum dots/TiO2 nanorod interface by TiO2 interlayer passivation

    International Nuclear Information System (INIS)

    Jaramillo-Quintero, O A; Rincon, M E; Triana, M A

    2017-01-01

    Surface trap states hinder charge transfer and transport properties in TiO 2 nanorods (NRs), limiting its application on optoelectronic devices. Here, we study the interfacial processes between rutile TiO 2 NR and CdSe quantum dots (QDs) using TiO 2 interlayer passivation treatments. Anatase or rutile TiO 2 thin layers were deposited on an NR surface by two wet-chemical deposition treatments. Reduced interfacial charge recombination between NRs and CdSe QDs was observed by electrochemical impedance spectroscopy with the introduction of TiO 2 thin film interlayers compared to bare TiO 2 NRs. These results can be ascribed to in-gap trap state passivation of the TiO 2 NR surface, which led to an increase in open circuit voltage. Moreover, the rutile thin layer was more efficient than anatase to promote a higher photo-excited electron transfer from CdSe QDs to TiO 2 NRs due to a large driving force for charge injection, as confirmed by surface photovoltage spectroscopy. (paper)

  3. Synthesis and Characterization of Titanium Dioxide Thin Film for Sensor Applications

    Science.gov (United States)

    Latha, H. K. E.; Lalithamba, H. S.

    2018-03-01

    Titanium oxide (TiO2) nanoparticles (metal oxide semiconductor) are successfully synthesized using hydrothermal method for sensor application. Titanium dioxide and Sodium hydroxide are used as precursors. These reactants are mixed and calcinated at 400 °C to produce TiO2 nanoparticles. The crystalline structure, morphology of synthesized TiO2 nanoparticles are studied using x-ray diffraction (XRD), Fourier Transform Infrared (FTIR) analysis and scanning electron microscopy (SEM). XRD results revealed that the prepared TiO2 sample is highly crystalline, having Anatase crystal structure. FT-IR spectra peak at 475 cm‑1 indicated characteristic absorption bands of TiO2 nanoparticles. The XRD and FTIR result confirmed the formation of high purity of TiO2 nanoparticles. The SEM image shows that TiO2 nanoparticles prepared in this study are spherical in shape. Synthesized TiO2 nanoparticles are deposited on glass substrate at room temperature using E beam evaporation method to determine gauge factor and found to be 4.7. The deposited TiO2 thin films offer tremendous potential in the applications of electronic and magneto–electric devices.

  4. Synthesis and characterization of Ba_0_._5Pb_0_._5TiO_3 perovskite - type thin films deposited by spin coating at low temperatures

    International Nuclear Information System (INIS)

    Wermuth, T.B.; Wiederkehr, N.A.; Alves, A.K.; Bergmann, C.P.

    2014-01-01

    In this paper we present a non-aqueous sol-gel route for the obtention of solid compounds and thin films of oxide type- perovskite ABO_3, such as Ba_0_._5 Pb_0_._5 TiO_3, synthesized by sol - gel route with subsequent heat treatment. The solid compounds were characterized by X-ray diffraction (XRD) techniques and thermal analysis (TGA / DTA). The thin film was obtained by using spin-coating techniques at low temperatures onto commercial substrates of polymethylmethacrylate (PMMA) and characterized by contact angle, atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results show that the films present microstructures and roughness directly related to annealing temperatures, characterized by the formation of crystalline nanostructures with surface regularity and transparency. (author)

  5. Osteoblast Adhesion on Cathodic Arc Plasma Deposited Nano-Multilayered TiCrAlSiN Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun Kyu [University of Ulsan, Ulsan (Korea, Republic of); Pham, Vuong Hung [Hanoi University of Science and Technology (HUST), Hanoi (Viet Nam)

    2014-03-15

    Adhesion of osteoblast cells to TiCrAlSiN thin films was evaluated in vitro. Ti and TiCrAlSiN thin films were deposited on glass substrates by cathodic arc deposition. Surface roughness and chemistry of the TiCrAlSiN thin films was characterized by AFM and EPMA, respectively. Ti and TiCrAlSiN thin films and glass coverslips were cultured with human osteoblast cells (hFOB 1.19). The cell cytoskeleton was analyzed by observing the organization of actin stress fibers and microtubules. Cell proliferation was investigated by MTT assay and visualization. Focal contact adhesion was studied by observing the vinculin density. The results indicated that the TiCrAlSiN coating significantly influenced the actin cytoskeleton and microtubule organization. Human osteoblasts hFOB attached and proliferated better on TiCrAlSiN thin films with more focal contact adhesions than on Ti thin films or glass surfaces. These results suggest that TiCrAlSiN thin films can be an implantable material where the maximum cell adhesion is required.

  6. Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

    International Nuclear Information System (INIS)

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-01-01

    Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

  7. Increased photocatalytic activity induced by TiO2/Pt/SnO2 heterostructured films

    Science.gov (United States)

    Testoni, Glaucio O.; Amoresi, Rafael A. C.; Lustosa, Glauco M. M. M.; Costa, João P. C.; Nogueira, Marcelo V.; Ruiz, Miguel; Zaghete, Maria A.; Perazolli, Leinig A.

    2018-02-01

    In this work, a high photocatalytic activity was attained by intercalating a Pt layer between SnO2 and TiO2 semiconductors, which yielded a TiO2/Pt/SnO2 - type heterostructure used in the discoloration of blue methylene (MB) solution. The porous films and platinum layer were obtained by electrophoretic deposition and DC Sputtering, respectively, and were both characterized morphologically and structurally by FE-SEM and XRD. The films with the Pt interlayer were evaluated by photocatalytic activity through exposure to UV light. An increase in efficiency of 22% was obtained for these films compared to those without platinum deposition. Studies on the reutilization of the films pointed out high efficiency and recovery of the photocatalyst, rendering the methodology favorable for the construction of fixed bed photocatalytic reactors. A proposal associated with the mechanism is discussed in this work in terms of the difference in Schottky barrier between the semiconductors and the electrons transfer and trapping cycle. These are fundamental factors for boosting photocatalytic efficiency.

  8. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  9. Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors

    International Nuclear Information System (INIS)

    Kang, S.M.; Yoon, S.G.; Suh, S.J.; Yoon, D.H.

    2008-01-01

    Tantalum nitride thin films were deposited by radio frequency (RF) reactive sputtering at various N 2 /Ar gas flow ratios and working pressures to examine the change of their electrical resistivity. From the X-ray diffraction (XRD) and four-point probe sheet resistance measurements of the TaN x films, it was found that the change of the crystalline structures of the TaN x films as a function of the N 2 partial pressure caused an abrupt change of the electrical resistivity. When the hexagonal structure TaN thin films changed to an f.c.c. structure, the sheet resistance increased from 16 Ω/sq to 1396 Ω/sq. However, we were able to control the electrical resistivity of the TaN thin film in the range from 69 Ω/sq to 875 Ω/sq, with no change in crystalline structure, within a certain range of working pressures. The size of the grains in the scanning electron microscopy (SEM) images seemed to decrease with the increase of working pressure

  10. Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

    Science.gov (United States)

    Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

    2016-06-15

    Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

  11. Preparation of planar CH3NH3PbI3 thin films with controlled size using 1-ethyl-2-pyrrolidone as solvent

    International Nuclear Information System (INIS)

    Hao, Qiuyan; Chu, Yixia; Zheng, Xuerong; Liu, Zhenya; Liang, Liming; Qi, Jiakun; Zhang, Xin; Liu, Gang; Liu, Hui; Chen, Hongjian; Liu, Caichi

    2016-01-01

    Recently, planar perovskite solar cells based on CH 3 NH 3 PbI 3 have attracted many researcher's interest due to their unique advantages such as simple cell architecture, easy fabrication and potential multijunction construction comparing to the initial mesoporous structure. However, the preparation of planar perovskite films with high quality is still in challenge. In this paper, we developed a vapor-assisted solution process using a novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) instead of the traditional N, N-dimethylformamide (DMF) to construct a high-quality perovskite CH 3 NH 3 PbI 3 thin film with pure phase, high compactness, small surface roughness and controlled size. The phase evolution and growth mechanism of the perovskite films are also discussed. Utilizing the NEP of low volatility and moderate boiling point as solvent, we dried the PbI 2 -NEP precursor films at different temperature under vacuum and then obtained PbI 2 thin films with different crystalline degree from amorphous to highly crystalline. The perovskite films with crystal size ranged from hundreds of nanometers to several micrometers can be prepared by reacting the PbI 2 films of different crystalline degree with CH 3 NH 3 I vapor. Moreover, planar-structured solar cells combining the perovskite film with TiO 2 and spiro-OMeTAD as the electron and holes transporting layer achieves a power conversion efficiency of 10.2%. - Highlights: • A novel and green solvent of 1-Ethyl-2-pyrrolidone (NEP) was used to construct high-quality perovskite CH 3 NH 3 PbI 3 thin film. • The CH 3 NH 3 PbI 3 grain with different sizes ranged from hundreds of nanometers to several micrometers can be obtained. • Planar-structured perovskite CH 3 NH 3 PbI 3 solar cells using NEP as solvent achieves a power conversion efficiency of 10.2%.

  12. Atomic layer deposition of Ru thin film using N{sub 2}/H{sub 2} plasma as a reactant

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Tae Eun [Busan Center, Korea Basic Science Institute, 1275 Jisadong, Gangseogu, Busan, 618-230 (Korea, Republic of); Mun, Ki-Yeung; Choi, Sang-Kyung; Park, Ji-Yoon [School of Materials Science and Engineering Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Cheon, Taehoon [Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu (Korea, Republic of); Kim, Woo Kyoung [School of Chemical Engineering, Yeungnam University, 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Lim, Byoung-Yong; Kim, Sunjung [School of Materials Science and Engineering, University of Ulsan, Mugeo-dong, Nam-go, Ulsan, 680-749 (Korea, Republic of)

    2012-07-31

    Ruthenium (Ru) thin films were grown by atomic layer deposition using IMBCHRu [({eta}6-1-Isopropyl-4-MethylBenzene)({eta}4-CycloHexa-1,3-diene)Ruthenium(0)] as a precursor and a nitrogen-hydrogen mixture (N{sub 2}/H{sub 2}) plasma as a reactant, at the substrate temperature of 270 Degree-Sign C. In the wide range of the ratios of N{sub 2} and total gas flow rates (fN{sub 2}/N{sub 2} + H{sub 2}) from 0.12 to 0.70, pure Ru films with negligible nitrogen incorporation of 0.5 at.% were obtained, with resistivities ranging from {approx} 20 to {approx} 30 {mu} Ohm-Sign cm. A growth rate of 0.057 nm/cycle and negligible incubation cycle for the growth on SiO{sub 2} was observed, indicating the fast nucleation of Ru. The Ru films formed polycrystalline and columnar grain structures with a hexagonal-close-packed phase. Its resistivity was dependent on the crystallinity, which could be controlled by varying the deposition parameters such as plasma power and pulsing time. Cu was electroplated on a 10-nm-thick Ru film. Interestingly, it was found that the nitrogen could be incorporated into Ru at a higher reactant gas ratio of 0.86. The N-incorporated Ru film ({approx} 20 at.% of N) formed a nanocrystalline and non-columnar grain structure with the resistivity of {approx} 340 {mu} Ohm-Sign cm. - Highlights: Black-Right-Pointing-Pointer Atomic layer deposition (ALD) of Ru and N-incorporated Ru film using N{sub 2}/H{sub 2} plasma. Black-Right-Pointing-Pointer The growth rate of 0.057 nm/cycle and negligible incubation cycle. Black-Right-Pointing-Pointer A low resistivity of Ru ({approx} 16.5 {mu} Ohm-Sign cm) at the deposition temperature of 270 Degree-Sign C. Black-Right-Pointing-Pointer Electroplating of Cu on a 10-nm-thick ALD-Ru film.

  13. Inkjet-printed transparent nanowire thin film features for UV photodetectors

    KAUST Repository

    Chen, Shih Pin

    2015-01-01

    In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable suspension for inkjet printing applications. Sedimentation tests were also carried out to characterize the terminal velocity and dispersion stability of nanowires to avoid potential nozzle clogging problems. The well-dispersed silver nanowire ink was then inkjet printed on PET films to form patterned electrodes. Above the electrodes, another layer of TiO2 nanowires was also printed to create a highly transparent photodetector with >80% visible transmittance. The printed photodetector showed a fairly low dark current of 10-12-10-14 A with a high on/off ratio of 2000 to UV radiation. Under a bias voltage of 2 V, the detector showed fast responses to UV illumination with a rise time of 0.4 s and a recovery time of 0.1 s. More photo currents can also be collected with a larger printed electrode area. In summary, this study shows the feasibility of applying inkjet printing technology to create nanowire thin films with specific patterns, and can be further employed for photoelectric applications. © The Royal Society of Chemistry 2015.

  14. Ready fabrication of thin-film electrodes from building nanocrystals for micro-supercapacitors.

    Science.gov (United States)

    Chen, Zheng; Weng, Ding; Wang, Xiaolei; Cheng, Yanhua; Wang, Ge; Lu, Yunfeng

    2012-04-18

    Thin-film pseudocapacitor electrodes with ultrafast lithium storage kinetics, high capacitance and excellent cycling stability were fabricated from monodispersed TiO(2) building nanocrystals, providing a novel approach towards next-generation micro-supercapacitor applications. This journal is © The Royal Society of Chemistry 2012

  15. Molecular Engineering for Enhanced Charge Transfer in Thin-Film Photoanode.

    Science.gov (United States)

    Kim, Jeong Soo; Kim, Byung-Man; Kim, Un-Young; Shin, HyeonOh; Nam, Jung Seung; Roh, Deok-Ho; Park, Jun-Hyeok; Kwon, Tae-Hyuk

    2017-10-11

    We developed three types of dithieno[3,2-b;2',3'-d]thiophene (DTT)-based organic sensitizers for high-performance thin photoactive TiO 2 films and investigated the simple but powerful molecular engineering of different types of bonding between the triarylamine electron donor and the conjugated DTT π-bridge by the introduction of single, double, and triple bonds. As a result, with only 1.3 μm transparent and 2.5-μm TiO 2 scattering layers, the triple-bond sensitizer (T-DAHTDTT) shows the highest power conversion efficiency (η = 8.4%; V OC = 0.73 V, J SC = 15.4 mA·cm -2 , and FF = 0.75) in an iodine electrolyte system under one solar illumination (AM 1.5, 1000 W·m -2 ), followed by the single-bond sensitizer (S-DAHTDTT) (η = 7.6%) and the double-bond sensitizer (D-DAHTDTT) (η = 6.4%). We suggest that the superior performance of T-DAHTDTT comes from enhanced intramolecular charge transfer (ICT) induced by the triple bond. Consequently, T-DAHTDTT exhibits the most active photoelectron injection and charge transport on a TiO 2 film during operation, which leads to the highest photocurrent density among the systems studied. We analyzed these correlations mainly in terms of charge injection efficiency, level of photocharge storage, and charge-transport kinetics. This study suggests that the molecular engineering of a triple bond between the electron donor and the π-bridge of a sensitizer increases the performance of dye-sensitized solar cell (DSC) with a thin photoactive film by enhancing not only J SC through improved ICT but also V OC through the evenly distributed sensitizer surface coverage.

  16. Structural characterisation of GaN and GaN:O thin films

    International Nuclear Information System (INIS)

    Granville, S.; Budde, F.; Koo, A.; Ruck, B.J.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; James, B.J.; Kennedy, V.J.; Markwitz, A.; Prince, K.E.

    2005-01-01

    In its crystalline form, the wide band-gap semiconductor GaN is of exceptional interest in the development of suitable materials for short wavelength optoelectronic devices. One of the barriers to its potential usefulness however is the large concentration of defects present even in MBE-grown material often due to the lattice mismatch of the GaN with common substrate materials. Calculations have suggested that GaN films grown with an amorphous structure retain many of the useful properties of the crystalline material, including the wide band-gap and a low density of states in the gap, and thus may be a suitable alternative to the single crystal GaN for a variety of applications. We have performed structural and compositional measurements on heavily disordered GaN thin films with and without measureable O and H concentrations grown using ion-assisted deposition. X-ray diffraction and x-ray absorption fine structure measurements show that stoichiometric films are composed of nanocrystallites of ∼3-4 nm in size and that GaN films containing O to 10 at % or greater are amorphous. Rutherford backscattering spectroscopy (RBS) was performed and nuclear reaction analysis (NRA) measurements were made to determine the elemental composition of the films and elastic recoil detection (ERD) detected the hydrogen concentrations. Secondary ion mass spectroscopy (SIMS) measurements were used to depth profile the films. X-ray photoelectron spectroscopy (XPS) measurements probed the bonding environment of the Ga in the films. (author). 2 figs., 1 tab

  17. Atomic layer deposited TiO2 for implantable brain-chip interfacing devices

    International Nuclear Information System (INIS)

    Cianci, E.; Lattanzio, S.; Seguini, G.; Vassanelli, S.; Fanciulli, M.

    2012-01-01

    In this paper we investigated atomic layer deposition (ALD) TiO 2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality. The ALD process was performed at 295 °C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al 2 O 3 buffer layer between TiO 2 and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.

  18. Hydrazine-based synergistic Ti(III)/N doping of surfactant-templated TiO{sub 2} thin films for enhanced visible light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Syed Z.; Rankin, Stephen E., E-mail: srankin@engr.uky.edu

    2016-10-01

    This study reports the preparation of titanium (Ti{sup 3+}) and nitrogen co-doped cubic ordered mesoporous TiO{sub 2} thin films using N{sub 2}H{sub 4} treatment. The resulting co-doped TiO{sub 2} (Ti{sup 3+}-N-TiO{sub 2}) thin films show significant enhancements in visible light absorption and photocatalytic activity. Cubic ordered mesoporous TiO{sub 2} thin films were prepared via a sol-gel method with Pluronic F127 as the pore template. After brief calcination, the TiO{sub 2} films were dipped into hydrazine hydrate which acts both as a nitrogen source and as a reducing agent, followed by heating at low temperature (90 °C). The hydrazine treatment period was varied from 5 to 20 h to obtain different degrees of reduction and nitrogen doping. X-ray photoelectron spectroscopy (XPS) analyses and UV–vis absorbance spectra of Ti{sup 3+}-N-TiO{sub 2} films indicate that the incorporated N atoms and Ti{sup 3+} reduce the band gap of TiO{sub 2} and thus enhance the absorption of visible light. The corresponding visible light photocatalytic activity of Ti{sup 3+}-N-TiO{sub 2} films was determined from the photocatalytic degradation of methylene blue under visible light illumination (at 455 nm). The Ti{sup 3+}-N-TiO{sub 2} films prepared with 10 h of treatment show the optimum photocatalytic activity, with a pseudo-first order rate coefficient of 0.12 h{sup −1}, which is 3 times greater than that of undoped TiO{sub 2} films. Calcination temperature and time were varied prior to hydrazine treatment to confirm that a brief calcination at low temperature (10 min at 350 °C) gave the best photochemical activity. In photoelectrochemical water oxidation using a 455 nm LED, the Ti{sup 3+}-N-TiO{sub 2} films prepared with 10 h of N{sub 2}H{sub 4} treatment show about 4 times the photocurrent compared to undoped TiO{sub 2} films. The present study suggests that hydrazine induced doping is a promising approach to enable synergistic incorporation of N and Ti{sup 3+} into the

  19. Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes

    Directory of Open Access Journals (Sweden)

    Ekain Fernandez

    2016-02-01

    Full Text Available The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM, and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested present high N2 permeance in the order of 10−6 mol·m−2·s−1·Pa−1 at room temperature.

  20. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  1. Formation of double-layered TiO2 structures with selectively-positioned molecular dyes for efficient flexible dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Kim, Eun Yi; Yu, Sora; Moon, Jeong Hoon; Yoo, Seon Mi; Kim, Chulhee; Kim, Hwan Kyu; Lee, Wan In

    2013-01-01

    Graphical abstract: A novel flexible tandem dye-sensitized solar cell, selectively loading different dyes in discrete layers, was successfully formed on a plastic substrate by transferring the high-temperature-processed N719/TiO 2 over an organic dye-adsorbed TiO 2 film by a typical compression process at room temperature. -- Highlights: • A novel flexible dye-sensitized solar cell, selectively loading two different dyes in discrete layers, was successfully formed on a plastic substrate. • η of the flexible tandem cell obtained by transferring the high-temperature-processed TiO 2 layer was enhanced from 2.91% to 6.86%. • Interface control between two TiO 2 layers is crucial for the efficient transport of photo-injected electrons from the top to bottom TiO 2 layer. -- Abstract: To fabricate flexible dye-sensitized solar cells (DSCs) utilizing full solar spectrum, the double-layered TiO 2 films, selectively loading two different dyes in discrete layers, were formed on a plastic substrate by transferring the high-temperature-processed N719/TiO 2 over an organic dye (TA-St-CA)-sensitized TiO 2 film by a typical compression process at room temperature. It was found that interface control between two TiO 2 layers is crucial for the efficient transport of photo-injected electrons from the N719/TiO 2 to the TA-St-CA/TiO 2 layer. Electron impedance spectra (EIS) and transient photoelectron spectroscopic analyses exhibited that introduction of a thin interfacial TiO 2 layer between the two TiO 2 layers remarkably decreased the resistance at the interface, while increasing the electron diffusion constant (D e ) by ∼10 times. As a result, the photovoltaic conversion efficiency (η) of the flexible tandem DSC was 6.64%, whereas that of the flexible cell derived from the single TA-St-CA/TiO 2 layer was only 2.98%. Another organic dye (HC-acid), absorbing a short wavelength region of solar spectrum, was also applied to fabricate flexible tandem DSC. The η of the cell

  2. Sol-gel synthesis and optical properties of titanium dioxide thin film

    Science.gov (United States)

    Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali

    2018-03-01

    The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

  3. Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

    International Nuclear Information System (INIS)

    Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

    2013-01-01

    We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

  4. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  5. Charge transfer in photorechargeable composite films of TiO2 and polyaniline

    Science.gov (United States)

    Nomiyama, Teruaki; Sasabe, Kenichi; Sakamoto, Kenta; Horie, Yuji

    2015-07-01

    A photorechargeable battery (PRB) is a photovoltaic device having an energy storage function in a single cell. The photoactive electrode of PRB is a bilayer film consisting of bare porous TiO2 and a TiO2-polyaniline (PANi) mixture that work as a photovoltaic current generator and an electrochemical energy storage by ion dedoping, respectively. To study the charge transfer between TiO2 and PANi, the photorechargeable quantum efficiency QE ([electron count on discharge]/[incident photon count on photocharge]) was measured by varying the thickness LS of the TiO2-PANi mixture. The quantum efficiency QEuv for UV photons had a maximum of ˜7% at LS ˜ 7 µm. The time constant τTP for the charge transfer was about 10-1 s, which was longer ten times or more than the lifetime of excited electrons within TiO2. These facts reveal that the main rate-limiting factor in the photocharging process is the charge transfer between TiO2 and PANi.

  6. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  7. Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

    Science.gov (United States)

    Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

    2015-01-01

    We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

  8. Photocatalytic decomposition of N2O over TiO2/g-C3N4 photocatalysts heterojunction

    Science.gov (United States)

    Kočí, K.; Reli, M.; Troppová, I.; Šihor, M.; Kupková, J.; Kustrowski, P.; Praus, P.

    2017-02-01

    TiO2/g-C3N4 photocatalysts with the various TiO2/g-C3N4 weight ratios from 1:2 to 1:6 were fabricated by mechanical mixing in water suspension followed by calcination. Pure TiO2 was prepared by thermal hydrolysis and pure g-C3N4 was prepared from commercial melamine by thermal annealing at 620 °C. All the nanocomposites were characterized by X-ray powder diffraction, UV-vis diffuse reflectance spectroscopy, Raman spectroscopy, infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, photoelectrochemical measurements and nitrogen physisorption. The prepared mixtures along with pure TiO2 and g-C3N4 were tested for the photocatalytic decomposition of nitrous oxide under UVC (λ = 254 nm), UVA (λ = 365 nm) and Vis (λ > 400 nm) irradiation. The TiO2/g-C3N4 nanocomposites showed moderate improvement compared to pure g-C3N4 but pure TiO2 proved to be a better photocatalyst under UVC irradiation. However, under UVA irradiation conditions, the photocatalytic activity of TiO2/g-C3N4 (1:2) nanocomposite exhibited an increase compared to pure TiO2. Nevertheless, further increase of g-C3N4 amount leads/led to a decrease in reactivity. These results are suggesting the nanocomposite with the optimal weight ratio of TiO2 and g-C3N4 have shifted absorption edge energy towards longer wavelengths and decreased the recombination rate of charge carriers compared to pure g-C3N4. This is probably due to the generation of heterojunction on the TiO2/g-C3N4 interface.

  9. Tailoring of TiO2 films by H2SO4 treatment and UV irradiation to improve anticoagulant ability and endothelial cell compatibility.

    Science.gov (United States)

    Liao, Yuzhen; Li, Linhua; Chen, Jiang; Yang, Ping; Zhao, Ansha; Sun, Hong; Huang, Nan

    2017-07-01

    Surfaces with dual functions that simultaneously exhibit good anticoagulant ability and endothelial cell (EC) compatibility are desirable for blood contact materials. However, these dual functions have rarely been achieved by inorganic materials. In this study, titanium dioxide (TiO 2 ) films were treated by sulphuric acid (H 2 SO 4 ) and ultraviolet (UV) irradiation successively (TiO 2 H 2 SO 4 -UV), resulting in good anticoagulant ability and EC compatibility simultaneously. We found that UV irradiation improved the anticoagulant ability of TiO 2 films significantly while enhancing EC compatibility, though not significantly. The enhanced anticoagulant ability could be related to the oxidation of surface-adsorbed hydrocarbons and increased hydrophilicity. The H 2 SO 4 treatment improved the anticoagulant ability of TiO 2 films slightly, while UV irradiation improved the anticoagulant ability strongly. The enhanced EC compatibility could be related to the increased surface roughness and positive charges on the surface of the TiO 2 films. Furthermore, the time-dependent degradation of the enhanced EC compatibility and anticoagulant ability of TiO 2 H 2 SO 4 -UV was observed. In summary, TiO 2 H 2 SO 4 -UV expressed both excellent anticoagulant ability and good EC compatibility at the same time, which could be desirable for blood contact materials. However, the compatibility of TiO 2 H 2 SO 4 -UV with smooth muscle cells (SMCs) and macrophages was also improved. More effort is still needed to selectively improve EC compatibility on TiO 2 films for better re-endothelialization. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.; Gagarin, A. G.; Gaidukov, M. M.; Tumarkin, A. V.; Petrov, P. K.; Alford, N.; Kozyrev, A. B.

    2014-01-01

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally

  11. Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

    International Nuclear Information System (INIS)

    Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

    2013-01-01

    With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

  12. Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

    Science.gov (United States)

    Venkata Saravanan, K.; Raju, K. C. James

    2014-03-01

    The surface chemical states of RF-magnetron sputtered Ba0.5Sr0.5TiO3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O2 -, adsorbed oxide ion O- and lattice oxide ion O2-) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP ≦̸ 25%), whereas the films deposited in oxygen rich atmosphere (OMP ≧̸ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ~65% (@280 kV cm-1), with good ɛ r-E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications.

  13. Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

    Science.gov (United States)

    Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

    2017-08-17

    Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

  14. Preparation and characterization of B-C-N hybrid thin films

    International Nuclear Information System (INIS)

    Uddin, Md. Nizam; Shimoyama, Iwao; Sekiguchi, Tetsuhiro; Baba, Yuji; Nath, Krishna G.; Nagano, Masamitsu

    2006-06-01

    Two dimensional thin films composed of boron, carbon and nitrogen (B-C-N hybrid) were synthesized by ion beam deposition, and their electronic and geometrical structures were characterized by core-level spectroscopy using synchrotron radiation. B-C-N hybrid thin films were grown from ion beam plasma of borazine on highly oriented pyrolitic graphite (HOPG) at various temperatures. The films were characterized in-situ by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS). XPS study suggested that B, N and C atoms in the deposited films were in a wide variety of chemical bonds e.g., B-C, B-N, N-C, and B-C-N. It was found that B-C-N hybrid formation was enhanced at high temperature, and that the B-C-N component was dominantly synthesized at low boron content. In the NEXAFS spectra, the resonance peaks from B 1s to unoccupied π * -like orbitals were clearly observed. The polarization dependence of the B 1s → π * resonance peaks confirmed that the highly oriented graphite-like B-C-N hybrids surely exist at low boron content. (author)

  15. Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles

    Science.gov (United States)

    Rivera, Felipe

    Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ˜500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of

  16. Influence of the Porosity of the TiO2 Film on the Performance of the Perovskite Solar Cell

    Directory of Open Access Journals (Sweden)

    Xiaodan Sun

    2017-01-01

    Full Text Available The structure of mesoporous TiO2 (mp-TiO2 films is crucial to the performance of mesoporous perovskite solar cells (PSCs. In this study, we fabricated highly porous mp-TiO2 films by doping polystyrene (PS spheres in TiO2 paste. The composition of the perovskite films was effectively improved by modifying the mass fraction of the PS spheres in the TiO2 paste. Due to the high porosity of the mp-TiO2 film, PbI2 and CH3NH3I could sufficiently infiltrate into the network of the mp-TiO2 film, which ensured a more complete transformation to CH3NH3PbI3. The surface morphology of the mp-TiO2 film and the photoelectric performance of the perovskite solar cells were investigated. The results showed that an increase in the porosity of the mp-TiO2 film resulted in an improvement in the performance of the PSCs. The best device with the optimized mass fraction of 1.0 wt% PS in TiO2 paste exhibited an efficiency of 12.69%, which is 25% higher than the efficiency of the PSCs without PS spheres.

  17. Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

    Science.gov (United States)

    Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak

    2007-04-01

    The effect of heat treatment in electric field on the structure and dielectric properties at microwave range of rf magnetron sputtering derived (Ba0.5Sr0.5)TiO3 thin films have been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability. The increased out-of-plane lattice constant in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature. And in dielectric loss, as the Ti-O bonding lengths increase, the energy scattering on the ferroelectric mode also increases. So, the value of dielectric loss is slightly increased.

  18. Versatile preparation method for mesoporous TiO2 electrodes ...

    Indian Academy of Sciences (India)

    Unknown

    cyanate into CuI layer further enhanced the efficiency up to 2⋅75% under the irradiance .... an extremely easy way to dope films with virtually any .... to see the effect of ionic liquid on CuI, 1-ethyl-3-methyl- ... This analysis showed that TiO2 electrodes were polycrys- .... thin insulating layer of Al2O3 by using dip-coating meth-.

  19. Scanning tunneling spectroscopic studies of superconducting NbN single crystal thin films at 4.2 K

    International Nuclear Information System (INIS)

    Kashiwaya, S.; Koyanagi, M.; Matsuda, M.; Shoji, A.; Shibata, H.

    1991-01-01

    This paper reports on a Low Temperature Scanning Tunneling Microscope (LTSTM) constructed to study the microscopic properties of superconductors. It has atomic resolution from room temperature to 4.2 K. Conductance spectra obtained between a Pt tip and a NbN thin film agreed well with theoretical curves based on the BCS theory

  20. Revelation of rutile phase by Raman scattering for enhanced photoelectrochemical performance of hydrothermally-grown anatase TiO2 film

    Science.gov (United States)

    Cho, Hsun-Wei; Liao, Kuo-Lun; Yang, Jih-Sheng; Wu, Jih-Jen

    2018-05-01

    Photoelectrochemical (PEC) performances of the anatase TiO2 films hydrothermally grown on the seeded fluorine-doped tin oxide (FTO) substrates are examined in this work. Structural characterizations of the TiO2 films were conducted using Raman scattering spectroscopy. Although there is no obvious rutile peak appearing, an asymmetrical peak centered at ∼399 cm-1 was observed in the Raman spectra of the TiO2 films deposited either on the low-temperature-formed seed layers or with low concentrations of Ti precursor. The asymmetrical Raman shift can be deconvoluted into the B1g mode of anatase and Eg mode of rutile TiO2 peaks centered at ∼399 cm-1 and ∼447 cm-1, respectively. Therefore, a minute quantity of rutile phase was inspected in the anatase film using Raman scattering spectroscopy. With the same light harvesting ability, we found that the PEC performance of the anatase TiO2 film was significantly enhanced as the minute quantity of rutile phase existing in the film. It is ascribed to the formation of the anatase/rutile heterojunction which is beneficial to the charge separation in the photoanode.